201107442 六、發明說明 【發明所屬之技術領域】 本發明係有關使用於將半導體晶圓切 (晶片）之晶粒切割步驟以及將切斷之晶片 或其他晶片之晶粒黏合步驟之兩步驟中 帶。 【先前技術】 半導體裝置之製造步驟中，係實施將 成晶片單位（晶粒切割）之步驟，拾取經切 (晶片）之步驟，進而使經拾取之晶片接著 裝基板等之晶粒黏合（安裝）步驟。 上述半導體裝置之製造步驟中使用 帶，已知有於基材薄膜上依序形成黏著劑 晶片黏著用黏著薄膜（例如參考專利文獻] 然而，若藉由最普遍晶粒切割方法之 磨石（晶粒切割刀）切斷晶片時，伴隨著晶 晶粒切割刀之旋轉震動引起鄰接之晶片彼 生晶片破裂或晶片缺陷等之碎片之問題。 爲了減低此種晶粒切割時之碎片，已 件之厚度設爲WUm)，接著劑層厚度設爲 層硬化後之在 25t之儲存彈性率設爲 WxE/A-Q表示之Q之値成爲0.5〜80之 (例如參考專利文獻2)。 斷成半導體元件 接著於引腳框架 之晶圓加工用膠 半導體晶圓切割 斷之半導體元件 於引腳框架或封 之晶圓加工用膠 層及接著劑層之 [)0 高速旋轉薄型硏 片之薄型化，因 此接觸，而有發 知有將半導體元 ，Α(μιη)，接著劑 E(GPa)時，以 .晶圓加工用膠帶 -5- 201107442 [先前技術文獻] [專利文獻] [專利文獻1]特開2002-226796號公報 [專利文獻2]特開2005-026547號公報 【發明內容】 [發明欲解決之課題] 上述專利文獻2中記載之晶圓加工用膠帶，並未考慮 因晶粒切割刀引起之旋轉震動之頻率數及溫度上升，而例 « 如於晶粒切割刀以高速旋轉時，有無法防止晶片破裂或晶 片缺陷等碎片之問題。 因此，本發明之目的在於提供一種晶粒切割時與晶粒 切割刀引起之振動頻率數無關，亦即與晶粒切割刀之轉速 無關，而可降低晶片破裂或晶片缺陷等碎片之晶圓加工用 膠帶。 [用以解決課題之手段] 用以解決上述課題之本發明之接著薄膜係具有接著劑 層而用於製造半導體裝置之接著薄膜，其特徵爲於將前述 接著劑層在80°C之損失正切tanS設爲Y，頻率數設爲 X(Hz)，Y爲以X爲函數之近似式Y = bXa表示時，a爲 0.18以下，b爲0.25以下。 又，用以解決上述課題之本發明之半導體加工膠帶， 其係於在基材薄片上形成有黏著劑層之黏著膠帶之前述黏 -6- ⑧ 201107442 著劑層上層合接著劑層之半導體加工膠帶，表 前述接著劑層在80°C之損失正切tanS設爲’ 爲X(Hz)，Y爲以X爲函數之近似式Y = bXa | 0.18以下，b爲0.25以下。頻率數X較好爲 1 0 0 0 Η z 以下。 [發明效果] 依據本發明，可實現晶粒切割時與晶粒 振動頻率數無關，亦即與晶粒切割刀之轉速 低晶片破裂或晶片缺陷等碎片之晶圓加工用 可選擇所需之晶粒切割刀旋轉速度。 【實施方式】 以下，基於圖式說明本發明之實施形態。 本發明之實施形態之晶圓加工用膠帶1 〇之咅 圓加工用膠帶10具有由基材薄膜12a及在；I 黏著劑層12b所構成之黏著薄膜12，以及拍 1 2上所層合之接著劑層1 3。如此，該晶圓加 依序形成有基材薄膜12a及黏著劑層12b 13° 又，黏著劑層12b可由一層黏著劑層所有 層合有兩層以上之黏著劑層者所構成。又，圖 有爲保護接著劑層1 3，而在晶圓加工用膠帶 離襯片11之樣態。 特徵爲於將 ，頻率數設 示時，a爲 0Hz以上、 割刀引起之 關，而可降 帶。藉此， 圖1爲顯不 面圖。該晶 上所形成之 該黏著薄膜 ]：膠帶1 0係 及接著劑層 成，亦可由 1中，顯示 10上設有剝 201107442 黏著薄膜12及接著劑層13亦可預先切斷（預切割）成 符合使用步驟或裝置之特定形狀。本發明之晶圓加工用膠 帶，若於切斷成每一片半導體晶圓之形態，則其包含將複 數形成之長條狀薄片捲取於輥上之形態。 本實施形態之晶圓加工用膠帶1 〇具有以下構成方面 之特徵。 接著劑層13在80°C之損失正切tan5設爲Y，頻率數 設爲X(Hz)，Y爲以X爲函數之近似式Y = bXa表示時，a 爲0.18以下，前述近似式中之b爲0.25以下。 通常，若對樣品週期性施加變形ε ，則若樣品爲完全 的彈性體，則對應於此之應力σ並未發生時間上延遲而呈 現同相位。然而，若樣品中存在黏性要件，則發生應答延 遲（變形輸入與應答之相位差5 )。具有此時間上延遲之變 形ε與應力σ係由下述式（1)表示爲複彈性率（Ε*)。 Ε * = σ I ε E*=E，+iE” 式⑴ 又，本發明所使用之損失正切tan5係由下述式（2)表 示。 tan6 = E,,/E, 式（2) 其中，E ’爲儲存彈性率，E”爲損失彈性率。 儲存彈性率E’表示彈性性質，損失彈性率E”或損失 正切tanS表示黏性亦即能量損失之性質。 如此，以相當於黏性之損失彈性率E”與相當於彈性 之儲存彈性率E’之比（E”/E’）表示之損失正切tan5係反映 ⑧ -8- 201107442 振動吸收性’該値越大’黏性越高（變軟）且振動吸收性越 高。相反地，該値越小，黏性越低（變硬）且振動吸收性越 低。 本發明人等發現接著劑層有在80 °C之損失正切tan5 隨著頻率數變高而增大者及不增大者》顯示在80 °C之損失 正切tanS之頻率數依存特性之一例之圖表示於圖6。頻率 數依存特性爲將接著劑層在80°C之損失正切tanS設爲 Y，頻率數設爲X，Y爲以X爲函數之近似式Y=bXa表 示。近似式中之a越高，則若加上高的頻率數震動時損失 正切tanS變成增大。因此，a若超過〇. 1 8，則在600Hz 以上之接著劑層之回復性降低，故施加於易於變形之之晶 片之能量增大。爲此，晶片藉由引起碎片而釋放能量。因 此，若a超過0· 1 8則在相當於切割刀旋轉數之高頻率數 區域之碎片發生比例高。同樣地，上述近似式中之b越 高，則若施加高的頻率數，則損失正切tanS增大，若超 過0.2 5則在高頻率數區域易發生碎片。 以下，就本實施形態之晶圓加工用膠帶1 〇之各構成 要件詳細說明。 (接著劑層） 接著劑層1 3係於將半導體晶圓1等貼合並進行晶粒 切割後，拾取半導體晶片2之際，自黏著薄膜1 2剝離並 附著於半導體晶片2上，將半導體晶片2固定於基板或引 腳框架時作爲接著劑而使用者。因此，接著劑層1 3爲於 -9 - 201107442 拾取步驟中，具有可以直接附著於單片化之半導體晶片2 上之狀態，自黏著薄膜1 2剝離之剝離性，進而，於晶粒 黏合步驟中，具有用以將半導體晶片2接著固定於基板或 引腳框架之充分接著信賴性者。 接著劑層1 3爲預先使接著劑薄膜化者，可使用例如 於接著劑中所使用之公知聚醯亞胺樹脂、聚醯胺樹脂、聚 醚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚酯樹脂、聚酯醯亞 胺樹脂、苯氧基樹脂、聚颯樹脂、聚醚颯樹脂、聚苯硫醚 樹脂 '聚醚酮樹脂、氯化聚丙烯樹脂、丙烯酸樹脂、聚胺 基甲酸酯樹脂、環氧樹脂、聚丙烯醯胺樹脂、三聚氰胺樹 脂等或其混合物。 就硬化後之耐熱性良好方面而言，尤其較好使用環氧 樹脂。環氧樹脂只要是可呈現接著作用者即可。作爲環氧 樹脂，宜添加目的係高Tg(玻璃轉移溫度）化之多官能環氧 樹脂，至於多官能環氧樹脂，例示有酚-酚醛型環氧樹 脂、甲酚-酚醛型環氧樹脂等。環氧樹脂之硬化劑，可使 用通常使用作爲環氧樹脂之硬化劑者，舉例有胺、聚醯 胺、酸酐、聚硫醚、三氟化硼及1分子中具有2個以上之 酚性羥基之化合物的雙酚A、雙酚F、雙酚S等。尤其較 好使用用以使吸濕時之耐電腐蝕性優異之酚樹脂之酚-酚 醛樹脂或雙酚酚醛樹脂等。又，就可縮短用以硬化之熱處 理時間方面，較好與硬化劑一起使用硬化促進劑。作爲硬 化促進劑，可使用如2 -甲基咪唑、2 -苯基-4 -甲基咪唑、 1-氰基乙基-2-苯基咪唑、1-氰基乙基-2-苯基咪唑鑰三氟 ⑧ -10- 201107442 甲烷磺酸鹽之各種咪唑類等之鹼。 又，爲強化對於半導體晶片2或引腳框架20之接著 力，宜於上述材料或其混合物中添加矽烷偶合劑或鈦偶合 劑作爲添加劑。又，亦可添加用以提高耐熱性或調節流動 性之塡充劑。此等塡充劑有氧化矽、氧化鋁、銻氧化物 等。 就使上述a之値成爲0.18以下，使b之値成爲0.25 以下而言，控制例如環氧當量與羥基當量之比、環氧骨架 之種類、塡充劑之粒徑、矽烷偶合劑之量爲有效。羥基當 量對環氧當量之比較好爲0.5〜2.0，更好爲0.8〜1.2。環氧 骨架較好爲甲酚酚醛及萘系，更好爲萘系。塡充劑之粒徑 較好未達Ιμιη，更好爲Ο.ίμιη以下。矽烷偶合劑之量較好 成爲未達1 · 5重量。/。，更好爲1重量％以下。 接著劑層1 3之厚度並無特別限制，但通常較好爲 5〜100 μιη左右。又接著劑層13可層合於黏著薄膜12之 黏著劑層1 2b之全面上，或可預先切斷爲對應於所貼合之 半導體晶圓1之形狀（經預切割）之接著劑層層合於黏著劑 層12b之一部分上。使切斷爲對應於半導體晶圓1之形狀 之接著劑層13層合時，如圖2所示，可於貼合有半導體 晶圓1之部分有接著劑層1 3，於貼合有晶粒切割用之環 形框架20之部份不存在有接著劑層13而僅存在黏著薄膜 12之黏著劑層12b。通常，爲了使接著劑層13易與被接 著體剝離，藉由使用預切割之接著劑層1 3 ’可將環形框 架2〇貼合於黏著薄膜12，有在使用後之薄片剝離時有不 -11 - 201107442 易在環形框架上產生殘膠之效果。 (黏著薄膜） 黏著薄膜1 2爲在將半導體晶圓1進行晶粒切割時具 有不使半導體晶圓1剝離之充分黏著力，而在晶粒切割後 拾取半導體晶片之際具有可容易地自接著劑層13剝離之 低黏著力者。本實施形態中，黏著薄膜1 2，如圖1所 示，係使用於基材薄膜12a上設有黏著劑層12b者。 作爲黏著薄膜12之基材薄膜12a，可使用以往公知 者而無特別限制，但如後述，於本實施形態中，由於使用 如能量硬化性材料之放射線柬化性材料作爲黏著劑層 1 2b，故使用具有放射線透過性者。 例如，作爲基材薄膜12a之材料，可列舉爲聚乙烯、 聚丙烯、乙烯-丙烯共聚物、聚丁烯-1、聚-4-甲基戊烯-1、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸乙酯共聚物、 乙烯-丙烯酸甲酯共聚物、乙烯-丙烯酸共聚物、離子聚合 物等之α-烯烴之均聚物或共聚物或該等之混合物，聚胺 基甲酸酯、苯乙烯-乙烯-丁烯共聚物或戊烯系共聚物、聚 醯胺-聚醇共聚物等之熱可塑性彈性體以及該等之混合 物。又，基材薄膜12a可爲自該等之群選擇兩種以上之材 料混合者，亦可使該等單層或多層化者。基材薄膜12a之 厚度並無特別限制，適當設定即可，但較好爲 50〜200μπι 〇 本實施形態中，藉由對黏著薄膜1 2照射紫外線等之 ⑧ -12- 201107442 放射線，使黏著劑層1 2b硬化’使黏著劑層1 2b易於自接 著劑層1 3剝離，故而黏著劑層12b之樹脂，較好於使用 爲黏著劑之公知之氯化聚丙烯樹脂、丙烯酸樹脂、聚酯樹 脂、聚胺基甲酸酯樹脂、環氧樹脂、加成反應型有機聚矽 氧烷系樹脂、矽氧丙烯酸酯樹脂、乙烯-乙酸乙烯酯共聚 物、乙烯-丙烯酸乙酯共聚物、乙烯-丙烯酸甲酯共聚物、 乙烯-丙烯酸共聚物、聚異戊間二烯或苯乙烯-丁二烯共聚 物或其氫化加成物等之各種彈性體等或其混合物中，適宜 調配放射線聚合性化合物而調製黏著劑。又，亦可添加各 種界面活性劑或表面平滑劑。黏著劑層厚度並無特別限 制，只要適當設定即可，但較好爲5~30μιη。 該放射線聚合性化合物係使用例如藉由光照射而三次 元網狀化之分子內具有至少2個以上之光聚合性碳-碳雙 鍵之低分子量化合物或取代基上具有光聚合性碳-碳雙鍵 之聚合物或寡聚物。具體而言，可適當使用三羥甲基丙烷 三丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸 酯、二季戊四醇單羥基五丙烯酸酯、二季戊四醇六丙烯酸 酯、I，4-丁二醇二丙烯酸酯、1，6-己二醇二丙烯酸酯、聚 乙二醇二丙烯酸酯或寡聚酯丙烯酸酯等，矽氧丙烯酸酯 等’丙烯酸或各種丙烯酸酯類之共聚物等。 又’除如上述之丙烯酸酯系化合物以外，亦可使用胺 基甲酸酯丙烯酸酯系寡聚物。胺基甲酸酯丙烯酸酯系寡聚 物係使對於使聚酯型或聚醚型等之聚醇化合物與多價異氰 酸酯化合物（例如2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸 -13- 201107442 酯、1，3-二甲苯二異氰酸酯、1，4-二甲苯二異氰酸酯、二 苯基甲烷4,4-二異氰酸酯等）反應所得之末端異氰酸酯胺 基甲酸酯預聚物中，使具有羥基之丙烯酸酯或甲基丙烯酸 酯（例如丙烯酸2-羥基乙酯、甲基丙烯酸2-羥基乙酯、丙 烯酸2-羥基丙酯、甲基丙烯酸2-羥基丙酯、聚乙二醇丙 烯酸酯、聚乙二醇甲基丙烯酸酯等）反應而得。又，黏著 劑層12b亦可混合選自上述樹脂之2種以上者。 又，黏著劑層12b之樹脂中，除了對黏著薄膜12照 射放射線而使黏著劑層1 2b硬化之放射線聚合性化合物以 外，亦可適當調配丙烯酸系黏著劑、光聚合起始劑、硬化 劑等而調製黏著劑層12b。 使用光聚合起始劑時，可使用異丙基苯偶因醚、異丁 基苯偶因醚、二苯甲酮、米查酮（Michler's ketone)、氯噻 噸酮、十二烷基噻噸酮、二甲基噻噸酮、二乙基噻噸酮、 苄基二甲基縮酮、α-羥基環己基苯基酮、2-羥基甲基苯基 丙烷等。該等光聚合起始劑之調配量相對於丙烯酸系共聚 物1〇〇質量份較好爲0.01 ~5質量份。 (晶圓加工用膠帶之使用方法） 半導體裝置之製造步驟中，晶圓加工用膠帶1 0係如 下使用。 於圖2中，顯示於晶圓加工用膠帶10上貼合半導體 晶圓1與環形框架2 0之樣態。首先，如圖2所示，將黏 著薄膜12之黏著劑層12b貼附於環狀框架20上，將半導 ⑧ -14- 201107442 體晶圓1貼合於接著劑層1 3上。該等貼附順序並無限 制，亦可於將半導體晶圓1貼合於接著劑層1 3上之後， 將黏著薄膜12之黏著劑層12b貼附於環狀框架20上》 又，朝黏著薄膜12之環狀框架20之貼附，亦可與將半導 體晶圓1朝接著劑層1 3之貼合同時進行。 接著，實施半導體晶圓1之晶粒切割步驟（圖3 )，隨 後，實施對黏著薄膜1 2照射能量線例如紫外線之步驟。 具體而言，爲了利用晶粒切割刀21將半導體晶圓1及接 著劑層1 3進行晶粒切割，而藉由吸附台22將晶圓加工用 膠帶1 〇自黏著薄膜1 2面側予以吸附支持。接著，利用晶 粒切割刀21將半導體晶圓1及接著劑層1 3切斷成半導體 晶片2單位而單片化，隨後，自黏著薄膜1 2下面側照射 能量。藉由該能量照射，使黏著劑層1 2b硬化而降低其黏 著力。又，取代能量線之照射，亦可藉由加熱等之外部刺 激使黏著劑薄膜12之黏著劑層12b之黏著力降低。黏著 劑層1 2b係由兩層以上之黏著劑層層合而構成時，亦可使 各黏著劑層內之一層或所有層藉由能量線照射而硬化，使 各黏著劑層內之一層或所有層之黏著力降低。 隨後，如圖4所示，對於保持經晶粒切割之半導體晶 片2及接著劑層13之黏著薄膜12實施朝環狀框架20之 直徑方向及圓周方向拉伸之擴展步驟。具體而言，對於保 持經晶粒切割之複數半導體晶片2及接著劑層1 3之狀態 的黏著薄膜1 2，使中空圓柱形狀之頂起構件3 0自黏著薄 膜1 2之下面側上升，使黏著薄膜1 2於環狀框架20之圓 -15- 201107442 周方向拉伸。藉由擴展步驟，使半導體晶片2彼此之間隔 擴大’可提高由CCD照相機等對半導體晶片2之辨識性 同時可防止拾取之際鄰接半導體晶片2彼此接觸所產生之 半導體晶片彼此之再接著。 實施擴展步驟後，如圖5所示，黏著薄膜1 2直接以 擴展之狀態’實施拾取半導體晶片2之拾取步驟。具體而 言，藉由自黏著薄膜12之下面側以銷31將半導體晶片2 向上頂起’同時以吸附治具32自黏著薄膜12之上面側吸 附半導體晶片2 ’而同時拾取單片化之半導體晶片2及接 著劑層1 3。 接著，實施拾取步驟後，實施晶粒切割步驟。具體而 言’藉由在拾取步驟之半導體晶片2與經拾取之接著劑層 13’將半導體晶片2接著於引腳框架或封裝基板等上。 (實施例） 接著就本發明之實施例加以說明，但本發明不限定於 該等實施例。 (黏著薄膜） <基材薄膜> 作爲薄膜狀之基材薄膜，係使用厚度1 〇〇 μ m之添加 彈性體之聚丙烯。 <黏著劑層組成物之調製> 黏著劑組成物爲添加聚合物共聚物3 3質量份、硬化 -16- 201107442 劑（異氰酸酯化合物）0.5質量份、光聚合起始劑3質量份 及溶劑80質量份並混合之組成物。聚合物共聚物爲具有 含有放射線硬化性碳-碳雙鍵之官能基之丙烯酸2-乙基己 酯與丙烯酸2-羥基烷酯類之共聚物，玻璃轉移溫度（Tg) 爲-53 t »光聚合起始劑爲1-羥基-環己基-苯基酮，溶劑 爲甲苯》 於基材薄膜上塗佈黏著劑層組成物以使黏著劑層組成 物乾燥後之厚度成爲l〇/zm，在110°C乾燥3分鐘，製作 黏著薄膜。 (接著薄膜） <接著劑組成物之調製> 將表1所示之調配比例（單位均爲「重量％」）之環氧 樹脂、含羥基之酚樹脂、含有環氧基之丙烯酸共聚物、塡 充劑、硬化促進劑（CUREZOL 2PZ，四國化成股份有限公 司製）及矽烷偶合劑（KBM-602，信越矽氧股份有限公司）溶 解於溶劑（甲基乙基酮與乙酸乙酯之混合物）中，以600rpm 攪拌1小時，獲得接著劑層組成物。 比較例1之接著劑層組成物之調整中使用之環氧樹脂 爲聯苯型環氧樹脂（環氧當量265)。酚樹脂爲苯型酹醛 (Zyl〇c)型酚樹脂（羥基當量171)。丙烯酸共聚物爲含有環 氧基之丙烯酸酯聚合物。塡充劑爲平均粒徑爲1.6ym之 氧化砂塡充劑。 比較例2之接著劑層組成物之調整中使用之環氧樹脂 -17- 201107442 爲聯苯型環氧樹脂（環氧當量265)。酚樹脂爲苯型酚醛型 酚樹脂（羥基當量171)。丙烯酸共聚物爲含有環氧基之丙 烯酸酯聚合物。 比較例3之接著劑層組成物之調整中使用之環氧樹脂 爲甲酚酚醛型環氧樹脂（環氧當量213)。酚樹脂爲苯型酚 醛型酚樹脂（羥基當量171)。丙烯酸共聚物爲含有環氧基 之丙烯酸酯聚合物。塡充劑爲平均粒徑爲0.8#m之氧化 矽塡充劑。 比較例4之接著劑層組成物之調整中使用之環氧樹脂 爲萘型環氧樹脂（環氧當量223)。酚樹脂爲苯型酚醛型酚 樹脂（羥基當量171)。丙烯酸共聚物爲含有環氧基之丙烯 酸酯聚合物。塡充劑爲平均粒徑爲0.8 /z m之氧化矽塡充 劑。 比較例5之接著劑層組成物之調整中使用之環氧樹脂 爲甲酚酚醛型環氧樹脂（環氧當量213)。酚樹脂爲苯型酚 醛型酚樹脂（羥基當量171)。丙烯酸共聚物爲含有環氧基 之丙烯酸酯聚合物。塡充劑爲平均粒徑爲O.l^m之氧化 矽塡充劑》 比較例6之接著劑層組成物之調整中使用之環氧樹脂 爲聯苯型環氧樹脂（環氧當量2 6 5)。酚樹脂爲苯型酚醛型 酚樹脂（羥基當量1*71)。丙烯酸共聚物爲含有環氧基之丙 烯酸酯聚合物。塡充劑爲平均粒徑爲O.l^m之氧化矽塡 充劑。 實施例1之接著劑層組成物之調整中使用之環氧樹脂 -18- 201107442 爲萘型環氧樹脂（環氧當量223)。酚樹脂爲苯型酚醛型酚 樹脂（羥基當量171)。丙烯酸共聚物爲含有環氧基之丙烯 酸酯聚合物。塡充劑爲平均粒徑爲0.005 //m之氧化矽塡 充劑。 實施例2之接著劑層組成物之調整中使用之環氧樹脂 爲甲酚酚醛型環氧樹脂（環氧當量213)。酚樹脂爲苯型酚 醛型酚樹脂（羥基當量171)。丙烯酸共聚物爲含有環氧基 之丙烯酸酯聚合物。塡充劑爲平均粒徑爲0.005 // m之氧 化矽塡充劑》 將各接著劑層組成物以使乾燥後之厚度成爲20 μ m 之方式，在經脫模處理之厚度25gm之由聚對苯二甲酸 乙二酯薄膜所構成之剝離襯片上塗佈接著劑層組成物，在 1 1 〇°C乾燥1 0分鐘，在剝離襯片上製作接著劑層。 所製作之黏著薄膜及接著薄膜分別切割成直徑 370nm、320mm之圓形，使黏著薄膜12之黏著劑層12b 與接著薄膜之接著劑層貼合。最後，將接著薄膜之聚對苯 二甲酸乙二酯薄膜自接著劑層剝離，製作實施例1〜2及比 較例1 ~6之晶圓加工用膠帶。 實施例1 ~ 2及比較例1〜6中，調查各接著劑層之在 80°C於各頻率數之損失正切tan δ 〇自所得損失正切tan δ 之頻率數依存特性，求得將接著劑層在80°C之損失正切 tanS設爲Y’頻率數設爲Χ’γ爲以X爲函數之近似式 Y = bXa，獲得a及b之値。其結果示於表1。 -19- 201107442 (接著劑層損失正切） 準備兩個在隔離薄膜（PET)上塗佈20 // m接著劑層 者，以接著劑層彼此貼合，剝離隔離薄膜後，進而將在隔 離薄膜上塗佈20 /z m接著劑層者以接著劑層彼此貼合， 重複進行該步驟直至層合1 mm厚度，作爲樣品。使用動 態黏彈性測定裝置DVE-V4(Rheology公司製），對硬化前 之接著劑層之樣品，測定於樣品厚度1 mm、固體剪切模 式、80°C之接著劑層之各頻率數之正切損失tan5。 (碎片性能） 使實施例1〜2及比較例1 ~6之各晶圓加工用膠帶’於 8 〇°C加熱貼合於厚度200 M m之矽晶圓背面上1小時’以 頻率數600Hz及800Hz進行晶粒切割成lOmmxlOmm後’ 以光學顯微鏡觀察晶粒剖面，評價晶片缺損之有無。朝晶 片面內方向之缺陷侵入平均未達20 者，爲良好以〇 標記表示，平均爲20#m以上、未達50/im者爲不可以 △標記表示，5 0 v m以上者爲不良以X標記表示。其結果 示於表1。 ⑧ 201107442 [表i] 比較例 1 比較例 2 比較例 3 比較例 4 比較例 5 比較例 6 實施例 1 實施例 2 接著 層組 成 環氧樹脂 12.5 12.5 12.5 12.5 12.5 15 13.5 16.2 酌樹脂 12 12 12 12 12 13.8 11.5 13.8 含有環氧基之 丙烯酸共聚物 64 72.5 67 63.5 67 67.2 64 62 塡充劑 9 0 6 9 6 2 9 6 硬化促進劑 1 1 1 1 1 1 1 1 矽烷偶合劑 1.5 2 1.5 2 1.5 1 1 1 黏彈 性 a(80°C) 0.29 0.28 0.32 0.20 0.22 0.16 0.17 0.13 b(80°C) 0.18 0.17 0.52 0.21 0.18 0.43 0.25 0.22 評價 結果 碎片性 (600Hz) X X X Δ Δ Δ 〇 〇 碎片性 (800Hz) X X X X X Δ 〇 〇 於實施例1〜2，晶粒切割時之晶片破裂或晶片缺損充 分獲得減低。於比較例1〜6，晶粒切割時多發現晶片破裂 或晶片缺損。 依據本實施形態之晶圓加工用膠帶1 〇，接著劑層於 8〇°C之損失正切tan5 Y爲以頻率數X爲函數之近似式 Y = bXa中之a爲0.18以下，b爲0.25以下，故即使於 600Hz之振動以及於800Hz之振動，損失正切tariS均未 增大，故接著劑層之回復性高，施加於晶片之能量少，故 可以減低碎片。如此，由於晶粒切割時與因晶粒切割刀引 起之振動頻率數亦即晶粒切割刀之旋轉速度無關，而可減 低碎片，故而可選擇所需之旋轉速度。 又，於上述實施形態中，雖對晶圓加工用膠帶加以說 -21 - 201107442 明，但亦可適用於接著薄膜。接著薄膜係於薄膜上具備含 有與上述實施形態相同之接著劑組成物之接著劑層。因此 於將接著劑層在80°C之損失正切tan5設爲Y，頻率數設 爲X(Hz)，Y爲以X爲函數之近似式Y=bXa表示時，a爲 0.18以下，b爲0.25以下。作爲上述薄膜，只要可將在 薄膜上製膜之接著劑層自薄膜剝離，可將接著劑層轉印於 上述黏著薄膜之黏著劑層等上之脫模薄膜即可，而無特別 限制。舉例有例如膜厚15~ 125 // m之聚對苯二甲酸乙二 酯、聚乙烯、聚丙烯、聚碳酸酯、氯化聚乙烯等之合成樹 脂薄膜所構成之可撓性薄膜。 上述薄膜因應需要，較好進行使轉印變容易之脫模處 理。 接著薄膜亦可進而在接著劑層上被覆保護薄膜而使 用。此情況下，將接著劑層上之保護薄膜剝離，例如，使 上述黏著薄膜之黏著劑層露出使接著劑層重疊後，自接著 劑層剝離上述薄膜，藉此可容易地在黏著劑層上設置接著 劑層。作爲上述保護薄膜，只要可自上述接著劑層剝離則 無限定，較好爲聚對苯二甲酸乙二酯薄膜、聚丙烯薄模、 聚乙烯薄膜。又，上述各保護薄膜較好塗佈或烙上矽氧" 保護薄膜之厚度並無特別限制，但較好爲1 5~ 1 2 5 // m。 依據上述接著薄膜，接著劑層之於80°C之損失正切 tan5 Y以頻率數X爲函數之近似式Y = bXa中之a爲0.18 以下，b爲0.25以下，故貼合於黏著薄膜上，貼於半導體 晶圓上、以晶粒切割刀進行晶粒切割之際，即使振動頻率 ⑧ -22- 201107442 數高亦不會增大損失正切tanS，故接著劑層之回復性高， 施加於晶片之能量少，故碎片得以減低。如此，由於晶粒 切割時與因晶粒切割刀引起之振動頻率數亦即晶粒切割刀 之旋轉速度無關’而可減低碎片，故而可選擇所需之旋轉 速度。 【圖式簡單說明】 圖1爲顯示本發明之實施形態之晶圓加工用膠帶之剖 面圖。 圖2爲將半導體晶圓貼合於晶圓加工用膠帶上之圖。 圖3係用以說明切割步驟之圖。 圖4係用以說明擴展步驟之圖。 圖5係用以說明拾取步驟之圖。 圖6係顯示接著劑層在80°C之損失正切tanS設爲 Y，頻率數設爲X(Hz)，Y爲以X爲函數之圖解之一例。 【主要元件符號說明】 1 :半導體晶圓 2 :半導體晶片（元件） 1 〇 :晶圓加工用膠帶 1 2 :黏著薄膜 12a :基材薄膜 12b :黏著劑層 1 3 :接著劑層 -23- 201107442 20 :引腳框架 2 1 :晶粒切割刀 2 2 :吸附台 3 0 :頂起構件 31 :銷 3 2 :吸附治具 ⑧ -24201107442 VI. Description of the Invention [Technical Fields of the Invention] The present invention relates to a two-step process for a die cutting step of cutting (wafer) a semiconductor wafer and a die bonding step of the wafer or other wafer to be cut. . [Prior Art] In the manufacturing step of the semiconductor device, the step of forming a wafer unit (die cutting) is performed, and the step of cutting (wafer) is picked up, thereby bonding the wafers of the picked-up wafer to the substrate or the like (installation) )step. In the manufacturing step of the semiconductor device described above, it is known to form an adhesive film for adhesion of an adhesive wafer on a substrate film (for example, refer to the patent literature). However, if the grindstone is the most common crystal cutting method (crystal When the wafer is cut, the rotation of the crystal grain cutting blade causes a problem of fragmentation of the wafer adjacent to the wafer or chip defects, etc. In order to reduce the chipping of the die, the piece has been removed. The thickness of the adhesive layer is set to be WUm), and the thickness of the adhesive layer is set to be 0.5 to 80 after the layer is hardened at a storage elastic modulus of 25 t, which is represented by WxE/AQ (for example, refer to Patent Document 2). The semiconductor component is cut into the semiconductor component and then the semiconductor component is cut by the wafer processing semiconductor wafer in the lead frame, and the [10] high-speed rotating thin film is used in the lead frame or the sealed wafer processing adhesive layer and the adhesive layer. Thinning, so contact, but there are known semiconductor elements, Α (μιη), adhesive E (GPa), wafer processing tape -5 - 201107442 [Primary Technical Literature] [Patent Literature] [Patents [Problems to be Solved by the Invention] The wafer for processing a wafer described in Patent Document 2 is not considered in the above-mentioned Patent Document 2; The frequency of the rotational vibration caused by the die cutter and the temperature rise, and the example «such as when the die cutter is rotated at a high speed, there is a problem that it is impossible to prevent chip breakage or chip defects. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a wafer processing which is independent of the number of vibration frequencies caused by a die cutter, that is, wafer processing which can reduce chip breakage or wafer defects, regardless of the number of revolutions of the die cutter. Use tape. [Means for Solving the Problem] The adhesive film of the present invention for solving the above-mentioned problems is an adhesive film for producing a semiconductor device having an adhesive layer, which is characterized in that the adhesive layer is tangent at 80 ° C When tanS is set to Y, the frequency is set to X (Hz), and Y is an approximate expression of Y = bXa, where a is 0.18 or less and b is 0.25 or less. Further, the semiconductor processing tape of the present invention for solving the above problems is a semiconductor processing of the adhesive layer on the adhesive layer of the adhesive tape formed on the base sheet by the adhesive layer. In the tape, the loss of tantalum tanS at the temperature of 80 ° C is set to 'X (Hz), Y is an approximate expression of X as a function of X = bXa | 0.18 or less, and b is 0.25 or less. The frequency number X is preferably 1 0 0 0 Η z or less. [Effect of the Invention] According to the present invention, it is possible to realize a crystal which can be selected for wafer processing, such as wafer cracking or wafer defect, which is different from the number of crystal vibration frequencies when the die is cut, that is, the rotation speed of the die cutter is low. Grain cutter speed of rotation. [Embodiment] Hereinafter, embodiments of the present invention will be described based on the drawings. The tape 10 for processing a wafer for processing according to the embodiment of the present invention has an adhesive film 12 composed of a base film 12a and an I-adhesive layer 12b, and a laminated film 12 Then the agent layer 13 is used. Thus, the wafer is sequentially formed with the base film 12a and the adhesive layer 12b 13°, and the adhesive layer 12b can be composed of a layer of an adhesive layer in which all of the adhesive layers are laminated. Further, the figure is for protecting the adhesive layer 13 and the film processing tape is separated from the lining sheet 11. The characteristic is that when the number of frequencies is set, a is 0 Hz or more, and the cutter is turned off, and the band can be lowered. Therefore, Fig. 1 is a schematic view. The adhesive film formed on the crystal]: a tape 10 and an adhesive layer, or 1 may be provided on the display 10 with a peeling 201107442 adhesive film 12 and an adhesive layer 13 may also be pre-cut (pre-cut) It conforms to the specific shape of the steps or devices used. The tape for wafer processing of the present invention comprises a form in which a plurality of elongated sheets formed on a roll are wound on a roll. The tape for processing wafer 1 of the present embodiment has the following features. In the subsequent layer 13, the loss tangent tan5 at 80 °C is Y, the frequency is X (Hz), and Y is expressed by the approximate expression Y = bXa as a function of X, and a is 0.18 or less. b is 0.25 or less. Generally, if the deformation ε is periodically applied to the sample, if the sample is a complete elastomer, the stress σ corresponding thereto does not appear to be delayed in time and appears in phase. However, if there is a viscous element in the sample, a response delay occurs (the phase difference between the deformation input and the response is 5). The deformation ε and the stress σ having such a time delay are expressed by the following formula (1) as the complex modulus (Ε*). Ε * = σ I ε E*=E, +iE" (1) Further, the loss tangent tan5 used in the present invention is represented by the following formula (2): tan6 = E,, /E, where (2) E ' is the storage elastic modulus, and E' is the loss elastic modulus. The storage elastic modulus E' indicates the elastic property, the loss elastic modulus E" or the loss tangent tanS indicates the viscosity, that is, the energy loss property. Thus, the elastic modulus E" corresponding to the viscosity and the storage elastic modulus E corresponding to the elasticity 'The ratio (E"/E') indicates the loss tangent tan5 system reflects 8 -8- 201107442 Vibration absorption 'The larger the 値, the higher the viscosity (softening) and the higher the vibration absorption. Conversely, The smaller the enthalpy, the lower the viscosity (hardening) and the lower the vibration absorption. The inventors have found that the adhesive layer has a loss tangent at 80 °C tan5 as the frequency becomes higher and does not increase. The graph showing an example of the frequency-dependent characteristic of the tangent tanS at 80 °C is shown in Fig. 6. The frequency-dependent characteristic is that the loss tangent tanS of the adhesive layer at 80 °C is set to Y, and the frequency is set to X, Y is expressed by the approximate expression Y = bXa as a function of X. The higher the a in the approximate expression, the higher the number of vibrations is, the loss tangent tanS becomes larger. Therefore, if a exceeds 〇. 1 8 , the resilience of the adhesive layer above 600 Hz is lowered, so it is easily deformed. The energy of the wafer is increased. For this reason, the wafer releases energy by causing debris. Therefore, if a exceeds 0·18, the proportion of fragments in the high frequency region corresponding to the number of rotations of the cutter is high. The higher the b of the above-mentioned approximation, the higher the number of frequencies is applied, the loss tangent tanS increases, and if it exceeds 0.2 5, the chip is likely to be broken in the high frequency region. Hereinafter, the wafer processing tape of the present embodiment is used. The constituent elements of the first layer are described in detail. (Adhesive layer) The adhesive layer 13 is formed by laminating and bonding the semiconductor wafer 1 and the like, and then peeling off and adhering from the adhesive film 12 when the semiconductor wafer 2 is picked up. The semiconductor wafer 2 is used as an adhesive when the semiconductor wafer 2 is fixed to the substrate or the lead frame. Therefore, the adhesive layer 13 is in the pick-up step of -9 - 201107442, and can be directly attached to the singulation. In the state of the semiconductor wafer 2, the peeling property of the self-adhesive film 12 is peeled off, and further, in the die bonding step, the semiconductor wafer 2 is fixed to the substrate or the lead frame. The adhesive layer 13 is a film obtained by previously thinning an adhesive, and for example, a known polyimine resin, a polyamide resin, a polyether quinone resin, or a polyamine can be used for the adhesive.醯imine resin, polyester resin, polyester phthalimide resin, phenoxy resin, polyfluorene resin, polyether oxime resin, polyphenylene sulfide resin 'polyether ketone resin, chlorinated polypropylene resin, acrylic resin, Polyurethane resin, epoxy resin, polypropylene decylamine resin, melamine resin, or the like, or a mixture thereof. Epoxy resin is particularly preferably used in terms of good heat resistance after hardening. As the epoxy resin, a polyfunctional epoxy resin having a high Tg (glass transition temperature) is preferably added. As for the polyfunctional epoxy resin, a phenol-phenolic epoxy resin and cresol are exemplified. - a phenolic epoxy resin or the like. As the hardener for the epoxy resin, those which are generally used as a curing agent for an epoxy resin can be used, and examples thereof include an amine, a polyamine, an acid anhydride, a polysulfide, a boron trifluoride, and a phenolic hydroxyl group having two or more molecules in one molecule. The compound is bisphenol A, bisphenol F, bisphenol S or the like. In particular, a phenol-phenolic resin or a bisphenol novolac resin which is a phenol resin excellent in electrocorrosion resistance at the time of moisture absorption is preferably used. Further, in terms of heat treatment time for hardening, it is preferred to use a hardening accelerator together with a hardener. As the hardening accelerator, for example, 2-methylimidazole, 2-phenyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazole can be used. Key trifluoro 8 -10- 201107442 A variety of bases such as imidazoles of methanesulfonate. Further, in order to reinforce the adhesion to the semiconductor wafer 2 or the lead frame 20, it is preferred to add a decane coupling agent or a titanium coupling agent as an additive to the above materials or a mixture thereof. Further, a hydrazine for improving heat resistance or adjusting fluidity may be added. These chelating agents are cerium oxide, aluminum oxide, cerium oxide, and the like. The enthalpy of the above a is 0.18 or less, and the enthalpy of b is 0.25 or less. For example, the ratio of the epoxy equivalent to the hydroxyl equivalent, the type of the epoxy skeleton, the particle diameter of the chelating agent, and the amount of the decane coupling agent are controlled. effective. The ratio of the hydroxyl group to the epoxy equivalent is preferably from 0.5 to 2.0, more preferably from 0.8 to 1.2. The epoxy skeleton is preferably a cresol novolac and a naphthalene system, more preferably a naphthalene system. The particle size of the ruthenium is preferably less than Ιμιη, more preferably Ο.ίμιη below. The amount of the decane coupling agent is preferably less than 7.5 by weight. /. More preferably, it is 1% by weight or less. The thickness of the layer of the agent layer 13 is not particularly limited, but is usually preferably about 5 to 100 μm. The adhesive layer 13 may be laminated on the entire adhesive layer 12b of the adhesive film 12, or may be previously cut into an adhesive layer corresponding to the shape (pre-cut) of the bonded semiconductor wafer 1. It is combined with a portion of the adhesive layer 12b. When the adhesive layer 13 cut into the shape corresponding to the semiconductor wafer 1 is laminated, as shown in FIG. 2, the adhesive layer 13 may be adhered to the portion to which the semiconductor wafer 1 is bonded, and the crystal may be bonded thereto. The portion of the annular frame 20 for dicing does not have the adhesive layer 13 and only the adhesive layer 12b of the adhesive film 12 is present. In general, in order to facilitate the peeling of the adhesive layer 13 from the adherend, the annular frame 2 can be attached to the adhesive film 12 by using the pre-cut adhesive layer 13', and there is no peeling of the sheet after use. -11 - 201107442 Easy to produce residual glue on the ring frame. (Adhesive film) The adhesive film 12 has a sufficient adhesive force for peeling off the semiconductor wafer 1 when the semiconductor wafer 1 is subjected to die cutting, and can be easily self-adhesive when the semiconductor wafer is picked up after the die cutting The low adhesion of the agent layer 13 is peeled off. In the present embodiment, the adhesive film 12 is used as the adhesive film layer 12b on the base film 12a as shown in Fig. 1 . The base film 12a of the adhesive film 12 is not particularly limited as long as it is conventionally known. However, as described later, in the present embodiment, a radiation-producing material such as an energy curable material is used as the adhesive layer 12b. Therefore, those who have radioactivity are used. For example, examples of the material of the base film 12a include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, and ethylene-vinyl acetate copolymer. a homopolymer or copolymer of an ethylene-ethyl acrylate copolymer, an ethylene-methyl acrylate copolymer, an ethylene-acrylic acid copolymer, an ionic polymer, or the like, or a mixture thereof, a polyurethane, A thermoplastic elastomer such as a styrene-ethylene-butene copolymer or a pentene copolymer, a polyamine-polyol copolymer, and the like. Further, the base film 12a may be a mixture of two or more kinds of materials selected from the group, or may be a single layer or a plurality of layers. The thickness of the base film 12a is not particularly limited and may be appropriately set, but is preferably 50 to 200 μm. In the present embodiment, the adhesive film 12 is irradiated with ultraviolet rays such as 8-12-201107442 to form an adhesive. The layer 1 2b is hardened to make the adhesive layer 1 2b easily peel off from the adhesive layer 13 , so the resin of the adhesive layer 12b is preferably a known chlorinated polypropylene resin, acrylic resin, polyester resin which is an adhesive. , polyurethane resin, epoxy resin, addition reaction type organic polyoxyalkylene resin, oxime acrylate resin, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-acrylic acid In the various elastomers such as a methyl ester copolymer, an ethylene-acrylic acid copolymer, a polyisoprene or a styrene-butadiene copolymer or a hydrogenated adduct thereof, or a mixture thereof, a radiation polymerizable compound is suitably formulated. Modulate the adhesive. Further, various surfactants or surface smoothing agents may be added. The thickness of the adhesive layer is not particularly limited and may be appropriately set, but is preferably 5 to 30 μm. The radiation polymerizable compound is a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule which is three-dimensionally networked by light irradiation, or a photopolymerizable carbon-carbon on a substituent. A polymer or oligomer of double bonds. Specifically, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, and 1,4-butanediol diacrylate can be suitably used. And 1,6-hexanediol diacrylate, polyethylene glycol diacrylate or oligoester acrylate, etc., an acrylic acid or a copolymer of various acrylates such as an oxime acrylate. Further, in addition to the above acrylate-based compound, a urethane acrylate-based oligomer can also be used. The urethane acrylate-based oligomer is a polyester compound such as a polyester type or a polyether type, and a polyvalent isocyanate compound (for example, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate). Terminal-13 isocyanate urethane prepolymer obtained by the reaction of acid-13-201107442 ester, 1,3-xylene diisocyanate, 1,4-dimethylbenzene diisocyanate, diphenylmethane 4,4-diisocyanate, etc. An acrylate or methacrylate having a hydroxyl group (for example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene-2) It is obtained by reacting an alcohol acrylate, polyethylene glycol methacrylate or the like. Further, the adhesive layer 12b may be mixed with two or more kinds selected from the above resins. Further, in the resin of the adhesive layer 12b, in addition to the radiation polymerizable compound which irradiates the adhesive film 12 with radiation to cure the adhesive layer 12b, an acrylic adhesive, a photopolymerization initiator, a curing agent, etc. may be appropriately formulated. The adhesive layer 12b is prepared. When using a photopolymerization initiator, isopropyl benzoate ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecyl thioxane may be used. Ketone, dimethyl thioxanthone, diethyl thioxanthone, benzyl dimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenyl propane, and the like. The amount of the photopolymerization initiator to be added is preferably from 0.01 to 5 parts by mass based on 1 part by mass of the acrylic copolymer. (Method of Using Tape for Wafer Processing) In the manufacturing process of the semiconductor device, the wafer processing tape 10 is used as follows. In Fig. 2, the state in which the semiconductor wafer 1 and the ring frame 20 are bonded to the wafer processing tape 10 is shown. First, as shown in Fig. 2, the adhesive layer 12b of the adhesive film 12 is attached to the annular frame 20, and the semiconductor wafer 1 of the semiconductive 8-14-201107442 is bonded to the adhesive layer 13. The order of attachment is not limited, and after the semiconductor wafer 1 is attached to the adhesive layer 13 , the adhesive layer 12 b of the adhesive film 12 is attached to the annular frame 20 . The attachment of the annular frame 20 of the film 12 can also be carried out in conjunction with the bonding of the semiconductor wafer 1 to the adhesive layer 13. Next, a die cutting step (Fig. 3) of the semiconductor wafer 1 is carried out, and then a step of irradiating the adhesive film 12 with an energy ray such as ultraviolet rays is carried out. Specifically, in order to perform die cutting of the semiconductor wafer 1 and the adhesive layer 13 by the die cutter 21, the wafer processing tape 1 is adsorbed by the adsorption stage 22 from the surface side of the adhesive film 1 2 stand by. Then, the semiconductor wafer 1 and the adhesive layer 13 are cut into units of the semiconductor wafer 2 by the crystal dicing blade 21 to be singulated, and then the energy is irradiated from the lower side of the adhesive film 1 2 . By this energy irradiation, the adhesive layer 12b is hardened to lower its adhesion. Further, in place of the irradiation of the energy ray, the adhesion of the adhesive layer 12b of the adhesive film 12 can be lowered by external stimuli such as heating. When the adhesive layer 1 2b is formed by laminating two or more adhesive layers, one or all of the layers in each adhesive layer may be hardened by irradiation of energy rays, so that one layer of each adhesive layer or The adhesion of all layers is reduced. Subsequently, as shown in Fig. 4, the adhesive film 12 for holding the die-cut semiconductor wafer 2 and the adhesive layer 13 is subjected to an expanding step of stretching in the radial direction and the circumferential direction of the annular frame 20. Specifically, the adhesive film 1 2 in a state in which the plurality of semiconductor wafers 2 and the adhesive layer 13 are cut by the crystal grains is lifted, and the hollow cylindrical-shaped lifting member 30 is raised from the lower surface side of the adhesive film 12 The adhesive film 12 is stretched in the circumferential direction of the circle -15-201107442 of the annular frame 20. By expanding the steps, the semiconductor wafers 2 are spaced apart from each other to increase the visibility of the semiconductor wafer 2 by a CCD camera or the like while preventing the semiconductor wafers generated by the adjacent semiconductor wafers 2 from coming into contact with each other at the time of pickup. After the expansion step is carried out, as shown in Fig. 5, the adhesive film 12 directly performs the pickup step of picking up the semiconductor wafer 2 in an expanded state. Specifically, the semiconductor wafer 2 is lifted up by the pin 31 from the lower side of the self-adhesive film 12 while the semiconductor wafer 2 is adsorbed from the upper side of the adhesive film 12 by the adsorption jig 32 while picking up the singulated semiconductor. Wafer 2 and adhesive layer 13 are. Next, after the picking step is performed, a die cutting step is performed. Specifically, the semiconductor wafer 2 is attached to a lead frame or a package substrate or the like by the semiconductor wafer 2 and the picked-up adhesive layer 13' in the pickup step. (Embodiment) Next, an embodiment of the present invention will be described, but the present invention is not limited to the embodiments. (Adhesive film) <Substrate film> As the film-form substrate film, a polypropylene having an elastomer added to a thickness of 1 μm was used. <Preparation of the adhesive layer composition> The adhesive composition is 33 parts by mass of the added polymer copolymer, the hardened-16-201107442 agent (isocyanate compound) 0.5 parts by mass, the photopolymerization initiator 3 parts by mass, and the solvent 80 parts by mass and mixed composition. The polymer copolymer is a copolymer of 2-ethylhexyl acrylate and 2-hydroxyalkyl acrylate having a functional group containing a radiation-curable carbon-carbon double bond, and has a glass transition temperature (Tg) of -53 t »light. The polymerization initiator is 1-hydroxy-cyclohexyl-phenyl ketone, and the solvent is toluene. The adhesive layer composition is coated on the substrate film so that the thickness of the adhesive layer composition is dried and becomes l〇/zm. Dry at 110 ° C for 3 minutes to make an adhesive film. (Continuous film) <Preparation of adhesive composition> Epoxy resin, hydroxyl group-containing phenol resin, epoxy group-containing acrylic copolymer having the blending ratio (unit: "% by weight") shown in Table 1 , chelating agent, hardening accelerator (CUREZOL 2PZ, manufactured by Shikoku Chemical Co., Ltd.) and decane coupling agent (KBM-602, Shin-Etsu Co., Ltd.) dissolved in solvent (methyl ethyl ketone and ethyl acetate) In the mixture), the mixture was stirred at 600 rpm for 1 hour to obtain an adhesive layer composition. The epoxy resin used for the adjustment of the adhesive layer composition of Comparative Example 1 was a biphenyl type epoxy resin (epoxy equivalent: 265). The phenol resin is a benzene type aldehyde (Zyl〇c) type phenol resin (hydroxyl equivalent 171). The acrylic copolymer is an epoxy group-containing acrylate polymer. The chelating agent is an oxidized sand enamel agent having an average particle diameter of 1.6 μm. Epoxy resin used in the adjustment of the composition of the adhesive layer of Comparative Example 2 -17-201107442 is a biphenyl type epoxy resin (epoxy equivalent: 265). The phenol resin is a phenol type phenol resin (hydroxy equivalent 171). The acrylic copolymer is an epoxy group-containing acrylate polymer. The epoxy resin used in the adjustment of the adhesive layer composition of Comparative Example 3 was a cresol novolac type epoxy resin (epoxy equivalent 213). The phenol resin is a phenol type phenol type phenol resin (hydroxy group equivalent 171). The acrylic copolymer is an epoxy group-containing acrylate polymer. The chelating agent is an cerium oxide cerium having an average particle diameter of 0.8 #m. The epoxy resin used for the adjustment of the adhesive layer composition of Comparative Example 4 was a naphthalene type epoxy resin (epoxy equivalent 223). The phenol resin is a phenoxy novolac type phenol resin (hydroxyl equivalent 171). The acrylic copolymer is an epoxy group-containing acrylate polymer. The chelating agent is a cerium oxide filler having an average particle diameter of 0.8 / z m. The epoxy resin used in the adjustment of the adhesive layer composition of Comparative Example 5 was a cresol novolac type epoxy resin (epoxy equivalent 213). The phenol resin is a phenol type phenol type phenol resin (hydroxy group equivalent 171). The acrylic copolymer is an epoxy group-containing acrylate polymer. The chelating agent is a cerium oxide filling agent having an average particle diameter of Ol^m. The epoxy resin used in the adjustment of the composition of the adhesive layer of Comparative Example 6 is a biphenyl type epoxy resin (epoxy equivalent of 2 6 5). . The phenol resin is a phenol type phenol resin (hydroxyl equivalent 1*71). The acrylic copolymer is an epoxy group-containing acrylate polymer. The chelating agent is a cerium oxide hydride having an average particle diameter of 0.1 mol. The epoxy resin used in the adjustment of the adhesive layer composition of Example 1 -18-201107442 is a naphthalene type epoxy resin (epoxy equivalent 223). The phenol resin is a phenoxy novolac type phenol resin (hydroxyl equivalent 171). The acrylic copolymer is an epoxy group-containing acrylate polymer. The chelating agent is a cerium oxide admixture having an average particle diameter of 0.005 //m. The epoxy resin used in the adjustment of the adhesive layer composition of Example 2 was a cresol novolac type epoxy resin (epoxy equivalent 213). The phenol resin is a phenol type phenol type phenol resin (hydroxy group equivalent 171). The acrylic copolymer is an epoxy group-containing acrylate polymer. The chelating agent is a cerium oxide filling agent having an average particle diameter of 0.005 // m. The composition of each of the adhesive layers is such that the thickness after drying is 20 μm, and the thickness of the release coating is 25 gm. An adhesive layer composition was applied onto the release liner composed of the ethylene terephthalate film, and dried at 10 ° C for 10 minutes to form an adhesive layer on the release liner. The adhesive film and the adhesive film thus produced were cut into circular shapes of 370 nm and 320 mm in diameter, respectively, and the adhesive layer 12b of the adhesive film 12 was bonded to the adhesive layer of the film. Finally, a film of a polyethylene terephthalate film which was followed by a film was peeled off from the adhesive layer to prepare tapes for wafer processing of Examples 1 to 2 and Comparative Examples 1 to 6. In Examples 1 to 2 and Comparative Examples 1 to 6, the loss-dependent tangent tan δ of each of the adhesive layers at 80 ° C at each frequency was investigated, and the frequency-dependent property of the loss tangent tan δ was determined to obtain an adhesive. The loss tangent tanS of the layer at 80 °C is set to Y'. The frequency is set to Χ 'γ is the approximate expression Y = bXa as a function of X, and the sum of a and b is obtained. The results are shown in Table 1. -19- 201107442 (Adhesive layer loss tangent) Prepare two coats of 20 // m adhesive layer on the release film (PET), adhere to each other with the adhesive layer, peel off the release film, and then in the release film The upper layer of the 20/zm adhesive layer was applied with the adhesive layers adhered to each other, and this step was repeated until the thickness of 1 mm was laminated as a sample. Using a dynamic viscoelasticity measuring apparatus DVE-V4 (manufactured by Rheology Co., Ltd.), the tangent of the adhesive layer before the hardening, the tangent of each frequency of the adhesive layer of the sample thickness of 1 mm, the solid shear mode, and the 80 ° C was measured. Losing tan5. (Fragment performance) Each of the wafer processing tapes of Examples 1 to 2 and Comparative Examples 1 to 6 was heat-bonded at 8 〇 ° C to the back surface of the wafer having a thickness of 200 μm for 1 hour at a frequency of 600 Hz. After the grain was cut into lOmm x 10 mm at 800 Hz, the grain profile was observed by an optical microscope to evaluate the presence or absence of wafer defects. The defect intrusion into the in-plane direction of the wafer is less than 20, which is indicated by a good mark. The average is 20#m or more, and the number is less than 50/im. The mark is not indicated by △ mark, and the above 50% is bad. Marked representation. The results are shown in Table 1. 8 201107442 [Table i] Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 Example 1 Example 2 Next Layer Composition Epoxy Resin 12.5 12.5 12.5 12.5 12.5 15 13.5 16.2 Resin 12 12 12 12 12 13.8 11.5 13.8 Acrylic acid copolymer containing epoxy group 64 72.5 67 63.5 67 67.2 64 62 塡 9 9 0 6 9 6 2 9 6 Hardening accelerator 1 1 1 1 1 1 1 1 decane coupling agent 1.5 2 1.5 2 1.5 1 1 1 Viscoelasticity a (80 ° C) 0.29 0.28 0.32 0.20 0.22 0.16 0.17 0.13 b (80 ° C) 0.18 0.17 0.52 0.21 0.18 0.43 0.25 0.22 Evaluation results Fragmentation (600 Hz) XXX Δ Δ Δ 〇〇 Fragmentation (800 Hz XXXXX Δ 实施 In Examples 1 to 2, wafer cracking or wafer defect at the time of die cutting was sufficiently obtained. In Comparative Examples 1 to 6, wafer cracking or wafer defect was observed at the time of die cutting. According to the wafer processing tape 1 of the present embodiment, the loss tangent tan5 Y of the adhesive layer at 8 ° C is an approximate expression Y = bXa as a function of the frequency number X, and a is 0.18 or less, and b is 0.25 or less. Therefore, even if the vibration at 600 Hz and the vibration at 800 Hz do not increase the loss tangent tariS, the adhesive layer has high recovery property and the energy applied to the wafer is small, so that the debris can be reduced. Thus, since the number of vibration frequencies caused by the die cutting blade, i.e., the rotational speed of the die cutter, is reduced irrespective of the grain cutting, the desired rotational speed can be selected. Further, in the above embodiment, the tape for wafer processing is described as -21 - 201107442, but it is also applicable to the adhesive film. Next, the film is provided with an adhesive layer containing the same adhesive composition as that of the above embodiment. Therefore, when the adhesive layer has a loss tangent tan5 at 80 ° C, Y is set to Y, the frequency is set to X (Hz), and Y is expressed by an approximate expression Y = bXa as a function of X, a is 0.18 or less, and b is 0.25. the following. The film is not particularly limited as long as it can peel the adhesive layer formed on the film from the film, and the adhesive layer can be transferred onto the adhesive layer of the adhesive film or the like. For example, there is a flexible film composed of a synthetic resin film of polyethylene terephthalate having a film thickness of 15 to 125 // m, polyethylene, polypropylene, polycarbonate, chlorinated polyethylene or the like. The film is preferably subjected to a release treatment which facilitates transfer as needed. The film can then be further coated with a protective film on the adhesive layer. In this case, the protective film on the adhesive layer is peeled off. For example, after the adhesive layer of the adhesive film is exposed to overlap the adhesive layer, the film is peeled off from the adhesive layer, whereby the adhesive layer can be easily applied to the adhesive layer. Set the adhesive layer. The protective film is not particularly limited as long as it can be peeled off from the above-mentioned adhesive layer, and is preferably a polyethylene terephthalate film, a polypropylene film, or a polyethylene film. Further, the protective film is preferably coated or galvanized. The thickness of the protective film is not particularly limited, but is preferably from 15 to 1 2 5 // m. According to the above-mentioned adhesive film, the loss tangent tan5 Y of the adhesive layer at 80 ° C is a function of the frequency X. The a of the formula Y = bXa is 0.18 or less, and b is 0.25 or less, so that it is bonded to the adhesive film. When dicing on a semiconductor wafer and performing grain cutting with a die cutter, even if the vibration frequency is 8-22-201107442, the loss tangent tanS is not increased, so the adhesive layer has high recovery and is applied to the wafer. The energy is small, so the debris is reduced. Thus, since the number of vibration frequencies caused by the die cutting blade, i.e., the rotational speed of the die cutter, can be reduced irrespective of the grain cutting, the desired rotational speed can be selected. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a tape for wafer processing according to an embodiment of the present invention. 2 is a view in which a semiconductor wafer is bonded to a tape for wafer processing. Figure 3 is a diagram for explaining the cutting step. Figure 4 is a diagram for explaining the expansion steps. Figure 5 is a diagram for explaining the pickup step. Fig. 6 shows an example in which the loss of the adhesive layer at 80 °C is tangent tanS is set to Y, the frequency is set to X (Hz), and Y is a function of X. [Description of main component symbols] 1 : Semiconductor wafer 2 : Semiconductor wafer (element) 1 〇: Wafer processing tape 1 2 : Adhesive film 12a : Substrate film 12b : Adhesive layer 1 3 : Adhesive layer -23- 201107442 20 : Lead frame 2 1 : Die cutter 2 2 : Adsorption station 3 0 : Jacking member 31 : Pin 3 2 : Adsorption fixture 8 - 24