TWI600069B - Wafer processing tape - Google Patents

Description

Wafer processing tape

The present invention relates to a tape for wafer processing, and more particularly to a tape for wafer processing having two functions of a die cutting tape and a die bonding film.

Recently, a die cutting/die bonding tape having a function of a die cutting tape and a die bonding film (also referred to as a die attach film) which cuts a semiconductor wafer is developed. The separation (die cutting) is used to fix a semiconductor wafer for each wafer, and the foregoing die bonding film is used for bonding the cut semiconductor wafer to a lead frame or a package substrate or the like, or used for stacking a semiconductor in a stacked package. The wafers are laminated and bonded.

As such a die cutting/die bonding tape, pre-cut processing is performed in consideration of workability such as bonding to a wafer or mounting on a ring frame at the time of die cutting.

Examples of the die cutting/die bonding tape after the pre-cutting process are shown in FIGS. 3 and 4. Figure 3 is a view showing a die cutting/die bonding tape FIG. 4(a) is a plan view of the die cutting/die bonding tape, and FIG. 4(b) is a cross-sectional view taken along line B-B of FIG. 4(a). The die cutting/die bonding tape 50 includes a release film 51, an adhesive layer 52, and an adhesive film 53. The subsequent agent layer 52 is processed into a circular shape corresponding to the shape of the wafer, and has a circular label shape. The adhesive film 53 is a film in which the peripheral portion of the circular portion corresponding to the shape of the annular frame for die cutting is removed, and has a circular label portion 53a and a peripheral portion 53b surrounding the outer side as shown in the drawing. The adhesive layer 52 is laminated in alignment with the center of the circular label portion 53a of the adhesive film 53, and the circular label portion 53a of the adhesive film 53 covers the adhesive layer 52 and is in contact with the release film 51 around it.

When the wafer is diced, the release film 51 is peeled off from the adhesive layer 52 and the adhesive film 53 in a laminated state, and as shown in FIG. 5, the back surface of the semiconductor wafer W is pasted on the adhesive layer 52, and bonded. The outer peripheral portion of the circular label portion 53a of the film 53 is bonded and fixed to the ring-shaped annular frame R. In this state, the semiconductor wafer W is diced by the die, and thereafter, the adhesive film 53 is subjected to a curing treatment such as ultraviolet irradiation to pick up the semiconductor wafer. At this time, since the adhesive force of the adhesive film 53 is lowered by the curing treatment, it is easy to peel off from the adhesive layer 52, and the semiconductor wafer is picked up in a state in which the adhesive layer 52 is adhered to the back surface. When the semiconductor wafer is bonded to a lead frame, a package substrate, or another semiconductor wafer after the adhesive layer 52 adhered to the back surface of the semiconductor wafer, it functions as a die-bonding film.

Further, in the die dicing/die bonding tape 50 as described above, the portion in which the adhesive layer 52 and the circular label portion 53a of the adhesive film 53 are laminated is thicker than the peripheral portion 53b of the adhesive film 53. Therefore, as a product When the roll is in the form of a roll, the height difference between the laminated portion of the adhesive layer 52 and the circular label portion 53a of the adhesive film 53 and the peripheral portion 53a of the adhesive film 53 coincides with each other, resulting in the surface of the soft adhesive layer 52. The phenomenon of the height difference, that is, the transfer mark (also referred to as label mark, wrinkle or roll) shown in FIG. Such a transfer mark is particularly remarkable when the adhesive layer 52 is formed of a soft resin or has a thickness, and when the number of turns of the die cutting/die bonding tape 50 is large. Further, if a transfer mark is generated, there is a possibility that a problem occurs in the processing of the wafer due to poor adhesion of the adhesive layer to the semiconductor wafer.

In order to solve such a problem, a tape for wafer processing has been developed in which the release film has a second surface opposite to the first surface on which the adhesive layer and the adhesive film are provided, and the short side of the release film Support members are provided at both ends of the direction (see, for example, Patent Document 1). Since such a wafer processing tape is provided with a support member, when the wafer processing tape is wound into a roll shape, the winding pressure applied to the tape can be dispersed or the pressure can be concentrated on the support member. The formation of the transfer blot on the adhesive layer can be suppressed.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 4360653

In general, the adhesive film 53 covers the adhesive layer 52 and is in contact with the release film 51 around it, and sometimes the release film 51 is adhered to the peripheral portion of the adhesive layer 52 due to the thickness of the adhesive layer 52. A slight gap is formed between the film 53 to leave air. The air between the release film 51 and the pressure-sensitive adhesive film 53 sometimes moves to the outside of the circular label portion 53a, and does not significantly affect the physical properties at this time.

However, such air may invade and remain between the adhesive layer 52 and the release film 51 while transporting and storing the tape for processing the wafer, and the adhesive layer 52 may be deformed by the air to be deformed, thereby impairing the adhesive. The smoothness of layer 52. Such a modification of the adhesive layer 52 is particularly when the adhesive layer 52 is formed of a relatively soft resin, when the thickness of the adhesive layer 52 is thick, and when the difference in elastic modulus between the release film 51 and the adhesive film 53 is large. Significantly produced.

When the adhesive layer 52 having a smoothness is attached to the semiconductor wafer, voids are generated between the semiconductor wafer and the adhesive layer 52. Such voids may cause problems in semiconductor wafer processing, resulting in a decrease in the yield of the fabricated semiconductor device.

In order to suppress the occurrence of the above-mentioned transfer marks, a method of weakening the winding pressure of the tape for wafer processing has been considered. However, this method may cause a winding deviation, which may cause, for example, difficulty in placement on a tape placement machine in actual use. obstacle.

When the support member is provided like the tape for wafer processing of Patent Document 1, the support member is provided in order to effectively prevent the transfer mark. When the thickness is equal to or greater than the thickness of the adhesive layer, it is known that when the wafer processing tape is wound into a roll shape, the pressing force by the crimping is larger than the portion corresponding to the adhesive layer. Since it is applied to the outside of the adhesive layer, it is easy to attract the air in the peripheral portion of the adhesive layer to the inside of the adhesive layer.

Therefore, an object of the present invention is to provide a tape for wafer processing which can reduce the occurrence of label marks and can reduce the entrapment of air between the adhesive layer and the release film.

In order to solve the above problems, the tape for wafer processing according to the present invention has a long release film, and an adhesive layer is provided on the first surface of the release film and has a predetermined plane. The adhesive film has a label portion and a peripheral portion surrounding the outer side of the label portion, and the label portion is provided to cover the adhesive layer and is in contact with the release film around the adhesive layer, and has a predetermined planar shape; and a support member provided on the second surface of the release film opposite to the first surface on which the adhesive layer and the adhesive film are provided, and provided in the short side direction of the release film The support member has a thickness of 0.3 times or more and less than 1.0 times the thickness of the adhesive layer at both end portions.

Further, in the above semiconductor processing belt, it is preferable that the support member has a linear expansion coefficient of 300 ppm/° C. or less.

Further, in the above semiconductor processing belt, it is preferable that a difference between a linear expansion coefficient of the support member and a linear expansion coefficient of the release film is 250ppm / °C or less.

Further, it is preferable that the pressure-sensitive adhesive film of the semiconductor processing belt has a pressure-sensitive adhesive layer and a base material film, and a static friction coefficient between the base material film and the support member is 0.2 to 2.0.

Further, in the above-described semiconductor processing belt, it is preferable that the supporting member is provided on a region of the second surface of the release film corresponding to the outer side of the adhesive layer provided on the first surface.

Further, in the above-described semiconductor processing belt, it is preferable that the support member is continuously provided along the longitudinal direction of the release film.

Further, in the above-described semiconductor processing belt, the support member may be colored. At this time, it is preferable that the support member is colored according to the type of the tape for wafer processing. Further, it can be colored according to the thickness of the tape for wafer processing.

Further, in the above-described semiconductor processing belt, it is preferable that the support member has a laminated structure of two or more layers.

Further, in the above-mentioned semiconductor processing belt, it is preferable that the support member is adhered with a bonding agent on a resin film substrate selected from the group consisting of polyethylene terephthalate, polypropylene, and high-density polyethylene. band.

Further, the semiconductor processing belt preferably has a ratio Eb/Ea of the tensile storage elastic modulus Eb of the adhesive film at 23 ° C and the tensile storage elastic modulus Ea of the release film at 23 ° C. 0.001~100.

Further, in the semiconductor processing belt, the ratio Ta/Tb of the thickness Ta of the release film to the thickness Tb of the adhesive film is preferably 0.07~2.5.

Further, in the above-described semiconductor processing belt, it is preferable that the peeling force F1 between the adhesive layer and the release film is 0.025 to 0.075 in a T-peel test under the conditions of a temperature of 23 ± 2 ° C and a peeling speed of 300 mm / min. N/100 mm, the peeling force F2 between the above adhesive layer and the above adhesive film is 0.08 to 10 N/100 mm, and F1 < F2.

According to the present invention, it is possible to reduce the occurrence of label marks and to reduce the entrapment of air between the adhesive layer and the adhesive film.

10‧‧‧ Wafer processing tape

11‧‧‧ release film

12‧‧‧ adhesive layer

13‧‧‧Adhesive film

13a‧‧‧Circular label

13b‧‧‧ peripherals

14, 14" ‧ ‧ support members

Fig. 1(a) is a plan view of a tape for wafer processing according to an embodiment of the present invention, and Fig. 1(b) is a cross-sectional view taken along line A-A of (a).

2 is a cross-sectional view of a tape for wafer processing according to another embodiment of the present invention.

3 is a perspective view of a conventional tape for wafer processing.

4(a) is a plan view of a conventional wafer processing tape, and FIG. 4(b) is a cross-sectional view taken along line B-B of (a).

5 is a cross-sectional view showing a state in which a tape for wafer processing is attached to a ring frame for die cutting.

Fig. 6 is a schematic view for explaining a problem of a conventional tape for wafer processing.

Embodiments of the present invention will be described in detail below based on the drawings. 1(a) is a plan view of a wafer processing tape (die dicing/die bonding tape) according to an embodiment of the present invention, and FIG. 1(b) is a cross-sectional view taken along line A-A of FIG. 1(a).

As shown in FIGS. 1(a) and 1(b), the wafer processing tape 10 has a long release film 11, an adhesive layer 12, an adhesive film 13, and a support member 14.

The subsequent agent layer 12 is provided on the first surface of the release film, and has a circular label shape corresponding to the shape of the wafer. The adhesive film 13 has a circular label portion 13a and a peripheral portion 13b surrounding the outer side of the circular label portion 13a, the circular label portion 13a covering the adhesive layer 12 and the release film around the adhesive layer 12 The way the contact is set. The peripheral portion 13b includes a form in which the outer side of the circular label portion 13a is completely surrounded, and a form that is not completely surrounded as shown in the drawing. The circular label portion 13a has a shape corresponding to the annular frame for die cutting. Further, the support member 14 is provided on the second surface 11b of the release film 11 opposite to the first surface 11a on which the adhesive 12 and the adhesive film 13 are provided, and is provided at both ends in the short-side direction of the release film 11. The portion has a thickness of 0.3 times or more and less than 1.0 times the thickness of the adhesive layer 12.

Hereinafter, each component of the wafer processing tape 10 of the present embodiment will be described in detail.

(release film)

As the release film 11 used in the wafer processing tape 10 of the present invention, polyester (PET, PBT, PEN, PBN, PTT), polyolefin (PP, PE), and copolymer (EVA, EEA) can be used. , EBA) and a film that partially replaces these materials to further improve the adhesion and mechanical strength. Further, it may be a laminate of these films.

The thickness of the release film is not particularly limited and can be appropriately set, and is preferably 25 to 50 μm.

(adhesive layer)

The adhesive layer 12 of the present invention is formed on the first surface 11a of the release film 11 as described above, and has a circular label shape corresponding to the shape of the wafer.

The adhesive layer 12 adheres to the back surface of the wafer after the wafer is picked up by the die-cut semiconductor wafer or the like, and is used as an adhesive when the wafer is fixed to the substrate or the lead frame. As the adhesive layer 12, an adhesive agent containing at least one selected from the group consisting of an epoxy resin, an acrylic resin, and a phenol resin can be preferably used. Further, a polyimide-based resin or an anthrone-based resin may also be used. The thickness can be appropriately set, but it is preferably about 5 to 100 μm.

(adhesive film)

As described above, the adhesive film 13 of the present invention has a circular label portion 13a corresponding to the shape of the annular frame for die cutting, and a peripheral portion 13b surrounding the outer side thereof. Such an adhesive film can be bonded from a film by pre-cut processing The agent is formed by removing the peripheral region of the circular label portion 13a.

The adhesive film 13 is not particularly limited as long as it has sufficient adhesive force when the crystal grains are diced without peeling off the wafer, and when the wafer is picked up after the dicing, it exhibits low adhesion to make it easy. For the purpose of peeling off from the adhesive layer, for example, a film having a pressure-sensitive adhesive layer provided on the base film can be suitably used.

The base film of the pressure-sensitive adhesive film 13 is not particularly limited as long as it is a conventionally known film. However, when a radiation curable material is used as the pressure-sensitive adhesive layer to be described later, it is preferable to use radiation-transmitting. membrane.

For example, as a material thereof, polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-acrylic acid B can be cited. a homopolymer or copolymer of an α-olefin such as an ester copolymer, an ethylene-methyl acrylate copolymer, an ethylene-acrylic copolymer, an ionomer, or a mixture thereof, a polyurethane, a styrene-ethylene-butene or a pentane A thermoplastic elastomer such as an olefin copolymer or a polyamine-polyol copolymer, and a mixture thereof. Further, the base film may be a film obtained by mixing two or more kinds of materials selected from these, or a film obtained by laminating one or more layers.

The thickness of the base film is not particularly limited and may be appropriately set, but is preferably 50 to 200 μm.

The resin used in the pressure-sensitive adhesive layer of the adhesive film 13 is not particularly limited, and a known chlorinated polypropylene resin, an acrylic resin, a polyester resin, a polyurethane resin, or an epoxy resin used in the adhesive can be used. Wait.

Preferably, an acrylic pressure-sensitive adhesive, a radiation polymerizable compound, a photopolymerization initiator, a curing agent, or the like is appropriately blended in the resin of the pressure-sensitive adhesive layer 13 to prepare a pressure-sensitive adhesive. The thickness of the pressure-sensitive adhesive layer 13 can be appropriately set without particular limitation, but is preferably 5 to 30 μm.

After the radiation-polymerizable compound is blended in the pressure-sensitive adhesive layer, it can be easily peeled off from the adhesive layer by radiation curing. As the radiation polymerizable compound, for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in the molecule which can be three-dimensionally networked by light irradiation can be used.

Specifically, it can be applied: trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxy pentaacrylate, dipentaerythritol hexaacrylate, 1,4-butane Alcohol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, and the like.

Further, in addition to the acrylate-based compound as described above, a urethane acrylate-based oligo may also be used. The urethane acrylate-based oligo may be a polyvalent alcohol compound such as a polyester type or a polyether type, and a polyvalent isocyanate compound (for example, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1, Reaction of 3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc. to obtain a terminal isocyanate urethane prepolymer, and then the terminal isocyanate Urethane prepolymer and acrylate or methyl propyl with hydroxyl group Ethyl esters (for example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol A acrylate or the like is obtained by a reaction.

Two or more types selected from the above resins may be mixed in the pressure-sensitive adhesive layer.

When a photopolymerization initiator is used, for example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecyl thioxanthone (dodecyl) may be used. Thioxanthone), dimethyl thioxanthone, diethyl thioxanthone, benzyldimethylketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl Phenylpropane and the like. The amount of the photopolymerization initiator to be added is preferably 0.01 to 5 parts by mass based on 100 parts by mass of the acrylic copolymer.

(support member)

The support member 14 is provided on the second surface 11b of the release film 11 opposite to the first surface 11a on which the adhesive 12 and the adhesive film 13 are provided, and is provided at both end portions of the release film 11 in the short-side direction. The thickness of the layer 12 is then 0.3 times or more and less than 1.0 times the thickness. By providing the support member 14 in this manner, when the wafer processing tape 10 is wound into a roll shape, the winding pressure applied to the tape can be dispersed, so that formation of the transfer mark on the adhesive layer 12 can be suppressed.

In addition, in the case where the adhesive layer 12 and the adhesive film 13 are provided When the first surface 11a is formed as a support member, the width of the support layer is preferably in a range that does not come into contact with the circular label portion 13a, and may be limited. However, in the configuration of the present embodiment, the width of the support layer can be wide. The width of the support member 14 is ensured, and the generation of transfer marks can be more effectively suppressed.

Further, when the support member is formed on the first surface 11a on which the adhesive 12 and the adhesive film 13 are provided, the width of the support layer is limited, whereas the configuration of the present embodiment can securely support the support. The width of the member 14 can more effectively suppress the generation of transfer marks.

Further, by providing the support member 14 on the second surface 11b of the release film 11, an effect of increasing the allowable displacement of the position of the support member 14 can be obtained.

The support member 14 is preferably provided on the second surface 11b of the release film 11 in a region corresponding to the outer side of the adhesive layer 12 provided on the first surface, that is, on the second surface 11b as shown in Fig. 1(a). From the end of the release film 11 to the region r of the adhesive layer 12. With such a configuration, when the tape 10 is wound up, the adhesive layer 12 does not overlap with the support member 14 provided on the second surface 11b of the release film 11, so that it is possible to prevent not only the occurrence of transfer marks but also prevention. The trace of the support member 14 is attached to the adhesive layer 12.

The thickness of the support member 14 is 0.3 times or more and less than 1.0 times the thickness of the adhesive layer 12. By making the support member 14 have a thickness smaller than 1.0 times the thickness of the adhesive layer, when the tape 10 is taken up, the adhesive film 13 comes into contact with the second surface 11b of the release film 11 which is superposed on the surface thereof, and is crimped. The layer 12 is then squeezed, thereby preventing air from entering the ground. Between the primer layer 12 and the release film 11, generation of voids at the time of wafer bonding is suppressed. In order to further prevent intrusion of air between the adhesive layer 12 and the release film 11, the thickness of the support member 14 is more preferably 0.9 times smaller than that of the adhesive layer. In addition, when the support member 14 has a thickness of 0.3 times or more of the adhesive layer, the amount of deformation of the adhesive layer 12 due to the label trace can be reduced, and the label trace can be eliminated by heat at the time of wafer bonding, thereby enabling Inhibit pore generation. In order to eliminate the label marks at a low bonding temperature, the thickness of the support member 14 is more preferably 0.5 times or more of the pressure-sensitive adhesive layer.

The support member 14 may be intermittently or continuously provided along the longitudinal direction of the release film 11, but from the viewpoint of more effectively suppressing the generation of transfer marks, it is preferably provided continuously along the longitudinal direction of the base film 11.

The support member 14 of the present invention preferably has a linear expansion coefficient of 300 ppm/° C. or less. The wafer processing tape is placed in an environment with a large temperature change. For example, the wafer processing tape is kept at a low temperature of -20 ° C to 5 ° C during storage, and is used as an adhesive for the wafer processing tape. When the layer is bonded to the wafer, in order to improve the adhesion by heating and softening the adhesive, heat bonding is performed at 70 to 80 ° C using a hot plate. When the size of the support member 14 changes according to a change in temperature, there is a possibility that air is immersed between the release film 11 and the adhesive film 13 and between the adhesive layer 12 and the adhesive film 13 to generate voids, and the wafer is generated. Poor fit, resulting in subsequent wafer die cutting procedures, tape expansion procedures, wafer pick-up procedures, and drop in yield in the installation process. In the present invention, it is possible to sufficiently use a support member having a linear expansion coefficient of 300 ppm/° C. or less. The generation of the transfer mark on the adhesive layer 12 is suppressed, and the dimensional change of the support member 13 is small even in a use environment in which the temperature changes greatly, and generation of voids can be suppressed.

In order to more effectively suppress the generation of transfer marks and the generation of voids, the linear expansion coefficient of the support member 14 is preferably 150 ppm/° C. or less, more preferably 70 ppm/° C. or less. The lower limit of the linear expansion coefficient is not particularly limited and is usually 0.1 ppm/°C.

Further, the difference between the linear expansion coefficient of the support member 14 and the linear expansion coefficient of the release film 11 is preferably 250 ppm/° C. or less. When the difference between the linear expansion coefficients is more than 250 ppm/° C., the dimensional difference between the support member 14 and the release film 11 occurs due to the temperature change during storage and the low temperature state during transportation and the normal temperature state during use, and thus various problems are as follows.

(1) When a dimensional difference occurs due to a temperature change, as described above, voids may be generated between the release film 11 and the adhesive film 13, and between the adhesive layer 12 and the adhesive film 13.

(2) When the user operates in a roller shape, the possibility of a roll collapse increases. In more detail, for example, even if the winding is normally performed at the time of manufacture or shipment, the user has a dimensional difference in the case of storage from refrigerating to normal temperature use, and from normal temperature use to refrigerating storage, and the possibility of roll collapse increases.

(3) A gap is formed between the sheets wound in a roll shape due to the difference in size, and the possibility that foreign matter is mixed in from the side surface of the roll increases.

(4) When the number of rolls of the wafer processing tape is large and the product width is wide, the cooling rate of the roll core side and the roll outer peripheral side is different when the storage is performed from the normal temperature. Therefore, on the core side of the roll and the outer side of the roll, the line The difference in size between the support member 14 and the release film 11 due to the difference in expansion is high, and the shape of the entire roll is highly likely to change.

In the present invention, the coefficient of linear expansion refers to a ratio at which the spatial expansion of the object increases when the temperature is changed under a constant pressure. When the temperature is T and the length of the solid is L, the linear expansion coefficient α is given by the following formula.

α = (1/L)‧( L/ T)

Further, the linear expansion coefficient in the present invention can be measured, for example, according to JIS K7197, a linear expansion rate test method for thermomechanical analysis of plastics, using a thermomechanical analysis device (TMA), and is cut into a length of 15 mm, a width of 5 mm, and a chuck. The sample having a distance of 10 mm was measured under the conditions of a tensile load of 10 g, a temperature increase rate of 5 ° C/min, a N ₂ gas atmosphere, and a measurement temperature range of -20 ° C to 50 ° C.

Moreover, it is preferable that the support member 14 has a material having a certain coefficient of friction with respect to the adhesive film 13 from the viewpoint of preventing the winding offset of the wafer processing tape 10 . Thereby, it is possible to obtain an effect that the winding offset of the wafer processing tape 10 can be prevented, high-speed winding can be performed, and the number of windings can be increased.

The coefficient of static friction between the support member 14 and the base film of the adhesive film 13 is preferably 0.2 to 2.0, and more preferably 0.6 to 1.6. When the wafer processing tape is wound into a roll shape, the peripheral portion 13a of the adhesive film 13 provided on the first surface 11a side of the release film 11 and the support provided on the second surface 11b side of the release film 11 are provided. The members 14 are in contact with each other, and therefore, when the static friction coefficient between the support member 14 and the base film of the adhesive film 13 is less than 0.2, in the manufacture At the time of use, it becomes easy to cause a winding offset, and the operability deteriorates. On the other hand, when it is more than 2.0, the resistance between the base film of the adhesive film 13 and the support member 14 is excessively large, the workability in the manufacturing process is deteriorated, or the bending progress is caused at the time of high-speed winding. Therefore, by setting the static friction coefficient between the two to the above range, it is possible to obtain an effect that the winding of the wafer processing tape 10 can be prevented from being shifted, and high-speed winding can be performed, and the number of windings can be increased.

In the present invention, the static friction coefficient between the support member 14 and the base film of the adhesive film 13 can be obtained by the following measurement method based on JIS K7125.

The base film of the adhesive film 13 cut into 25 mm (width) × 100 mm (length), respectively, was superposed on the two film samples of the support member 14, and the film on the lower side was fixed. Next, a weight of 200 g was placed on top of the laminated film, and the upper film was stretched at a speed of 200 mm/min as a load W, and the force Fd (g) at the time of slipping was measured, and the following formula was used. Static friction coefficient (μd).

μ d=Fd/W

As the support member 14, for example, an adhesive tape to which a resin film substrate is coated with an adhesive can be suitably used. By attaching such an adhesive tape to a predetermined position of both end portions of the second surface 11b of the release film 11, the wafer processing tape 10 of the present embodiment can be formed.

The base resin to which the tape is bonded is not particularly limited as long as it satisfies the range of the linear expansion coefficient and can withstand the rolling, but is preferably selected from the viewpoints of heat resistance, smoothness, and ease of handling. Polyethylene terephthalate (PET), polypropylene and high density polyethylene.

The composition and physical properties of the adhesive to which the tape is bonded are not particularly limited, and may be removed from the release film 11 during the winding process and the storage procedure of the wafer processing tape 10 .

Further, as the support member 14, a colored support member can be used. By using such a colored support member, when the wafer processing tape is wound into a roll shape, the type of the wafer processing tape 10 can be clearly recognized. For example, the color of the coloring support member 14 can be changed according to the type and thickness of the wafer processing tape 10, whereby the type and thickness of the wafer processing tape 10 can be easily recognized, and human error can be suppressed and prevented.

Further, regarding the wafer processing tape 10, the ratio of the tensile storage elastic modulus Eb of the adhesive film 13 at 23 ° C to the tensile storage elastic modulus Ea of the release film 11 at 23 ° C is preferably at Eb. /Ea 0.001~100 range.

The larger the value of Eb/Ea is, the harder the adhesive film 13 is and the softer the release film 11 is. On the other hand, the smaller the value of Eb/Ea is, the softer the adhesive film 13 is and the harder the release film 11 is. According to the above configuration, since Eb/Ea is 0.001 or more, the hardness (tensile storage elastic modulus Eb) of the adhesive film is at least a certain value. Therefore, it is possible to suppress occurrence of transfer marks on the adhesive layer 12 constituting the wafer processing tape 10. Further, the above Eb/Ea is 0.001 or more, and the hardness (tensile storage elastic modulus Eb) of the adhesive film 13 is at least a certain value, so that it is bonded to the semiconductor. When the wafer W is on, the adhesive film 13 and the release film 11 can be appropriately peeled off (extended tongue).

In addition, since the Eb/Ea is 100 or less, the hardness (tensile storage elastic modulus Ea) of the release film 11 is at least a certain value, and the hardness (tensile storage elastic modulus Eb) of the adhesive film 13 is Certainly below. Therefore, when the adhesive layer 12 is bonded to the release film 11, the release film 11 can be prevented from being broken, and the surface of the adhesive layer 12 or the bubbles can be prevented from being mixed between the films. As a result, it is possible to suppress the film lift of the release film 11 and to generate voids between the adhesive layer 12 and the semiconductor wafer W at the time of mounting the semiconductor wafer W.

According to the above configuration, it is possible to suppress occurrence of a transfer mark on the adhesive layer 12 when the winding is performed in a roll shape. Further, it is possible to suppress the film lift of the release film 11 and to generate voids between the adhesive layer 12 and the semiconductor wafer W at the time of mounting the semiconductor wafer W.

In the above configuration, the thickness of the release film 11 is preferably 10 to 100 μm, and the thickness of the adhesive film 13 is preferably 25 to 180 μm.

Further, in the above configuration, the tensile storage elastic modulus Eb of the adhesive film 13 at 23 ° C is preferably 1 to 500 MPa, and the tensile storage elastic modulus Ea of the release film 11 at 23 ° C is preferably 1 to ≥ 5000MPa.

Further, in the above configuration, it is preferable that the glass transition temperature of the adhesive layer 12 is in the range of 0 to 100 ° C, and the tensile storage elastic modulus at 23 ° C before curing is in the range of 50 MPa to 5000 MPa. By setting the glass transition temperature of the adhesive layer 12 to 0° C. or higher, it is possible to suppress an increase in the viscosity of the adhesive layer 12 in the B-stage state, and it is possible to maintain good adhesion. Operational. Further, at the time of die cutting, it is possible to prevent a part of the adhesive layer 12 from being melted and to adhere the adhesive to the semiconductor wafer. As a result, good pickup of the semiconductor wafer can be maintained. On the other hand, by setting the glass transition temperature to 100 ° C or lower, it is possible to prevent a decrease in fluidity of the adhesive layer 12 . In addition, good adhesion to the semiconductor wafer W can be maintained. Further, when the adhesive layer 12 is of a thermosetting type, the glass transition temperature of the adhesive layer 12 means a glass transition temperature before thermal curing. Further, by setting the tensile storage elastic modulus at 23 ° C before curing of the adhesive layer 12 to 50 MPa or more, it is possible to prevent a part of the adhesive layer 12 from being melted and to adhere the adhesive to the die during dicing. Semiconductor wafer. On the other hand, by setting the tensile storage elastic modulus to 5000 MPa or less, it is possible to maintain good adhesion to the semiconductor wafer W and the substrate.

When the thickness of the release film 11 is Ta and the thickness of the adhesive film 13 is Tb, the Ta/Tb of the wafer processing tape 10 is preferably in the range of 0.07 to 2.5.

In the above Ta/Tb, for example, when the thickness Ta of the release film 11 is constant, the smaller the value, the thicker the adhesive film 13. According to the above configuration, since Ta/Tb is 0.07 or more, the height difference between the portion where the adhesive film 13 is laminated and the portion where the adhesive film 13 is not laminated is not more than a certain value. Therefore, generation of transfer marks can be suppressed. In addition, since the Ta/Tb is 0.07 or more and the thickness of the adhesive film 13 is thicker than the thickness of the release film 11, the thickness of the release film 11 can absorb stress, and generation of transfer marks can be suppressed. Further, the above Ta/Tb is 0.07 or more, and the thickness of the adhesive film 13 is thicker than the release. Since the thickness of the film 11 is adhered to the semiconductor wafer W, the adhesive film 13 and the release film 11 can be appropriately peeled off (extended tongue). In the above-mentioned Ta/Tb, for example, when the thickness Tb of the adhesive film 13 is constant, the smaller the value, the thinner the thickness of the release film 11. Since the Ta/Tb is 2.5 or less, the thickness of the release film 11 is not more than a certain value. Therefore, the followability of the height difference between the portion in which the adhesive film 13 is laminated and the portion in which the adhesive film 13 is not laminated is good. In addition, since the Ta/Tb is 2.5 or less and the thickness of the release film 11 is not more than a certain value, the pressure at the time of laminating the adhesive film 13 to the release film can be made uniform, and the incorporation of air bubbles can be prevented. In the above-described configuration, when the wafer processing tape 10 in which the adhesive layer 12 and the release film 11 are laminated in this order on the adhesive film 13 is wound into a roll shape, it is possible to suppress the occurrence of the transfer in the adhesive layer 12. Printed traces.

In the above configuration, in the T-peel test under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min, it is preferable that the peeling force F1 between the adhesive layer 12 and the release film 11 is 0.025 to 0.075 N/100 mm. In the range, the peeling force F2 between the adhesive layer 12 and the adhesive film 13 is in the range of 0.08 to 10 N/100 mm, and the above F1 and the above F2 satisfy the relationship of F1 < F2.

Wafer processing is performed while applying tensile tension to the adhesive film 13, the adhesive layer 12, and the release film 11 from the viewpoint of preventing slack, winding offset, positional deviation, pores (bubbles), and the like. Use tape 10. As a result, the wafer processing tape 10 is manufactured in a state in which tensile residual strain exists in any of the films constituting the wafer. The tensile residual strain is, for example, transported at a low temperature of -30 to 10 ° C or stored for a long time in each film. Causes contraction. Further, since the physical properties of the respective films are different, the degree of shrinkage also differs. For example, in each film, the degree of shrinkage of the adhesive film 13 is the largest, and the degree of shrinkage of the release film 11 is the smallest. As a result, interfacial peeling occurs between the adhesive film 13 and the adhesive layer 12, or the film lift-up phenomenon of the release film 11 is caused.

In the above configuration, the peeling force F1 between the adhesive layer 12 and the release film 11 is in the range of 0.025 to 0.075 N/100 mm, and the peeling force F2 between the adhesive layer 12 and the adhesive film 13 is 0.08. A configuration in which the relationship of F1 < F2 is satisfied in the range of 10 N/100 mm. As described above, in the shrinkage in each film, the adhesive film is the largest, and therefore the peeling force F2 between the adhesive layer 12 and the adhesive film 13 is made larger than the peeling force F1 between the adhesive layer 12 and the release film 11. Thereby, shrinkage of the adhesive film 13 having the largest shrinkage rate can be suppressed, and the interface peeling between the adhesive film 13 and the adhesive layer 12 and the film lift-up phenomenon of the release film 11 can be prevented. Further, it is also possible to prevent some or all of the adhesive layer 12 from being transferred to the release film 11.

[Examples]

Next, embodiments of the invention will be described, but the invention is not limited to the embodiments.

(1) release film

Prepare the release film shown below.

Release film A1: Polyethylene terephthalate film after release treatment of anthrone with a thickness of 25 μm (tensile storage elastic modulus is 4070 MPa, linear expansion) Expansion coefficient is 60ppm)

Release film A2: Polyethylene terephthalate film after release treatment of an anthrone of 100 μm (stretch storage elastic modulus: 3910 MPa, linear expansion coefficient: 60 ppm)

Release film A3: Polyethylene terephthalate film after release treatment of anthrone with a thickness of 12 μm (tensile storage elastic modulus: 4020 MPa, linear expansion coefficient: 60 ppm)

Release film A4: Polyethylene terephthalate film after release treatment of anthrone with a thickness of 38 μm (tensile storage elastic modulus: 4020 MPa, linear expansion coefficient: 60 ppm)

Release film A5: Low density polyethylene (LDPE) film after release treatment of anthrone with a thickness of 25 μm (tensile storage elastic modulus: 105 MPa, linear expansion coefficient: 230 ppm)

(2) Production of adhesive film <Adhesive film B1>

As the acrylic copolymer having a functional group, a ratio of 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, and 2-ethylhexyl acrylate was 60 mol%, and the mass average molecular weight was 700,000. Copolymer. Next, 2-isocyanatoethyl methacrylate was added to have an iodine value of 20, and an acrylic copolymer (b-1) having a glass transition temperature of -50 ° C, a hydroxyl value of 10 mgKOH/g, and an acid value of 5 mgKOH/g was prepared. .

Coronate L (manufactured by Nippon Polyurethane Co., Ltd.) as a polyisocyanate was added to 100 parts by mass of the acrylic copolymer (b-1). In an amount of 3 parts by mass of Esacure KIP 150 (manufactured by Lamberti Co., Ltd.) as a photopolymerization initiator, the obtained mixture was dissolved in ethyl acetate and stirred to prepare a binder composition.

Next, the pressure-sensitive adhesive composition was applied onto a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 10 μm, dried at 110 ° C for 3 minutes, and then contained. A base film (thickness: 50 μm) of an ethylene-vinyl acetate copolymer (U.S.A., Ultrathene 636) was bonded to each other to prepare an adhesive film B1 having a thickness of 60 μm. The tensile storage elastic modulus was 40 MPa.

<Adhesive film B2>

The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner comprising a polyethylene terephthalate film after the release treatment so that the thickness after drying was 5 μm, and after drying at 110 ° C for 3 minutes, and containing a low density A base film (thickness: 40 μm) of polyethylene (LDPE, which has not been subjected to mold release treatment) was bonded to each other to form an adhesive film B2 having a thickness of 45 μm. The tensile storage elastic modulus was 105 MPa.

<Adhesive film B3>

The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 10 μm, and after drying at 110 ° C for 3 minutes, and containing ethylene - A base film (thickness: 150 μm) of an ionomer of a methacrylic copolymer (manufactured by Mitsui DuPont Polymer Chemical Co., Ltd., HIMILAN 1554) was bonded to each other to prepare a thickness. 160 μm of adhesive film B3. The tensile storage elastic modulus was 301 MPa.

<Adhesive film B4>

The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 10 μm, and after drying at 110 ° C for 3 minutes, and containing ethylene - A base film (thickness: 110 μm) of an ionomer of a methacrylic copolymer (manufactured by Mitsui DuPont Polymer Chemical Co., Ltd., HIMILAN 1554) was bonded to each other to prepare an adhesive film B4 having a thickness of 120 μm. The tensile storage elastic modulus was 289 MPa.

<Adhesive film B5>

The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 10 μm, and after drying at 110 ° C for 3 minutes, and containing ethylene - A base film (thickness: 110 μm) of a propylene block copolymer (Prime Polypro F707W, manufactured by Prime Polymer) was bonded to each other to prepare an adhesive film B5 having a thickness of 120 μm. The tensile storage elastic modulus was 980 MPa.

(3) Formation of an adhesive layer <Binder layer C1>

15.0 parts by mass of epoxy resin "YX4000" (manufactured by Mitsubishi Chemical Corporation, biphenyl novolac type epoxy resin, epoxy equivalent 185) and phenolic resin "LF-6161" (DIC system, novolac type phenolic resin, hydroxyl equivalent) 118) 40.0 parts by mass, epoxy resin "Epicoat 828" (Mitsubishi A combination of 5 parts by mass of "Aerosil R972" (manufactured by Aerosil, Japan, average particle diameter of primary particle diameter: 0.016 μm) as a cerium oxide filler, 45.0 parts by weight of bisphenol A type epoxy resin, epoxy equivalent 190) MEK was added to the mixture and stirred to obtain a homogeneous composition.

An acrylic copolymer (weight average molecular weight: 850,000, Tg 20 ° C) containing 6 to 100 parts of a monomer unit containing glycidyl acrylate or glycidyl methacrylate as a polymer containing a functional group was added thereto as an even "Kurezol 2PHZ-PW" (Curezol 2PHZ-PW), which is a curing accelerator, "KBM-802" (manufactured by Shin-Etsu Chemical Co., Ltd., decylpropyltrimethoxydecane), and 2-phenyl-4 , 5-dihydroxymethylimidazole, decomposition temperature 230 ° C) 0.1 parts by mass, stirred and mixed until homogeneous. Then, the resultant was filtered with a 100-mesh screening procedure, and subjected to vacuum defoaming, whereby a varnish (c-1) of the adhesive composition was obtained.

This varnish (c-1) was applied onto the release film A1 by an applicator so that the dried film thickness was 30 μm, and dried at 120 ° C for 5 minutes to prepare an adhesive layer C1 having a thickness of 30 μm.

<Binder layer C2>

The varnish (c-1) was applied onto the release film A2 by an applicator so that the dried film thickness was 30 μm, and dried at 120 ° C for 5 minutes to prepare an adhesive layer C2 having a thickness of 30 μm.

<Binder layer C3>

Applying varnish (c-1) to release film A1 with an applicator to dry The dry film thickness was 60 μm, and the film was dried at 120 ° C for 8 minutes to prepare an adhesive layer C3 having a thickness of 60 μm. Thereafter, the adhesive layer C3 is transferred from the release film A1 to the release film A3.

<Binder layer C4>

The varnish (c-1) was applied onto the release film A4 by an applicator so that the dried film thickness was 60 μm, and dried at 120 ° C for 8 minutes, and two of the films thus obtained were prepared, and they were laminated at 70 ° C. This was made into an adhesive layer C4 having a thickness of 120 μm, and one release film A4 was peeled off.

<Binder layer C5>

The varnish (c-1) was applied onto the release film A4 by an applicator so that the dried film thickness was 60 μm, and dried at 120 ° C for 8 minutes to prepare an adhesive layer C5 having a thickness of 60 μm.

<Binder layer C6>

The varnish (c-1) was applied onto the release film A4 by an applicator so that the dried film thickness was 60 μm, and dried at 120 ° C for 8 minutes to prepare an adhesive layer C6 having a thickness of 60 μm. Thereafter, the adhesive layer C6 is transferred from the release film A4 to the release film A5.

<Binder layer C7>

The varnish (c-1) was applied onto the release substrate A1 by an applicator so that the dried film thickness was 30 μm, and dried at 120 ° C for 5 minutes to prepare a thickness of 30 μm. Adhesive layer C7.

<Binder layer C8>

40 parts by mass of epoxy resin "1002" (manufactured by Mitsubishi Chemical Corporation, solid bisphenol A epoxy resin, epoxy equivalent 600) and epoxy resin "806" (manufactured by Mitsubishi Chemical Corporation, bisphenol F epoxy resin, Epoxy equivalent of 160, specific gravity of 1.20), 100 parts by mass, curing agent "Dyhard 100SF" (manufactured by DEGUSSA, dicyandiamide), 5 parts by mass, cerium oxide filler "SO-C2" (manufactured by ADMAFINE, average particle diameter: 0.5 μm), 200 mass And MEK was added to the composition of 3 parts by mass of "Aerosil R972" (manufactured by Aerosil, Japan, average particle diameter of primary particle diameter: 0.016 μm) as a cerium oxide filler, and the mixture was stirred and mixed to obtain a uniform composition.

100 parts by mass of a phenoxy resin "PKHC" (manufactured by INCHEM, a mass average molecular weight of 43,000, a glass transition temperature of 89 ° C), and "KBM-802" as a coupling agent (Shin-Etsu Philippine, thiopropyl propylene) 0.6 parts by mass of oxydecane, and "Curezol 2PHZ-PW" (manufactured by Shikoku Chemical Co., Ltd., 2-phenyl-4,5-dihydroxymethylimidazole, decomposition temperature: 230 ° C) as a curing accelerator, 0.5 parts by mass, Stir and mix until uniform. Then, the resultant was filtered with a 100-mesh screening procedure, and subjected to vacuum defoaming, whereby a varnish (c-2) of the adhesive composition was obtained.

This varnish (c-2) was applied onto the release film A4 with an applicator so that the dried film thickness was 60 μm, and dried at 120 ° C for 8 minutes to prepare an adhesive layer C8 having a thickness of 60 μm.

(4) Production of supporting members <Support member D1>

Applying the above-mentioned pressure-sensitive adhesive composition to a release liner comprising a polyethylene terephthalate film after the release treatment so that the thickness after drying is 10 μm, drying at 110 ° C for 3 minutes, and containing the pair A resin film substrate (thickness: 16 μm) of ethylene phthalate (without release treatment) was bonded to each other to prepare a support member D1 having a thickness of 26 μm. The tensile storage elastic modulus was 980 MPa, and the linear expansion coefficient was 60 ppm.

<support member D2>

The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 10 μm, and after drying at 110 ° C for 3 minutes, the polypropylene was contained. A resin film substrate (thickness: 25 μm) of (OPP, no release treatment) was bonded to each other to prepare a support member D2 having a thickness of 35 μm. The coefficient of linear expansion is 120 ppm.

<support member D3>

The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner comprising a polyethylene terephthalate film after the release treatment so that the thickness after drying was 5 μm, and after drying at 110 ° C for 3 minutes, and containing a low density A resin film substrate (thickness: 50 μm) of polyethylene (LDPE, which has not been subjected to mold release treatment) was attached and transferred to prepare a support member D3 having a thickness of 55 μm. The coefficient of linear expansion is 230 ppm.

<support member D4>

Applying the above-mentioned pressure-sensitive adhesive composition to a release liner comprising a polyethylene terephthalate film after the release treatment so that the thickness after drying is 10 μm, drying at 110 ° C for 3 minutes, and containing the pair A resin film substrate (thickness: 40 μm) of ethylene phthalate (without release treatment) was bonded to each other to prepare a support member D4 having a thickness of 50 μm. The coefficient of linear expansion is 60 ppm.

<support member D5>

A TW-PLT (manufactured by TANIMURA), which is a commercially available dust-free production line tape for a clean room, was used as the support member D5. A resin film substrate having a polyvinyl chloride layer having a thickness of 75 μm and a polyethylene terephthalate layer having a thickness of 12 μm was laminated to have a total thickness of 142 μm and a linear expansion coefficient of 80 ppm.

(Example 1)

The adhesive layer C1 is formed in the release film A1, and the adhesive layer C1 is returned to normal temperature, and the adhesive layer is adjusted so as to have a depth of 1/2 or less of the thickness of the release film, and then a circular shape of 320 mm in diameter is prepared. Cutting processing. Thereafter, the unnecessary portion of the adhesive layer is removed, and the adhesive film B1 is laminated with the release film A1 at room temperature so that the adhesive layer is brought into contact with the adhesive layer. Then, the adhesive film B1 is adjusted so as to have a depth of cut of 1/2 or less of the thickness of the release film, and then a circular pre-cut process having a diameter of 370 mm is performed concentrically with the adhesive layer to 20 N. The tension is taken up by 300 pieces. Next, an adhesive layer is provided on the release film A1. The support member D1 was bonded to both ends of the release film A1 in the short-side direction on the surface opposite to the surface of the adhesive film, and the wafer processing tape of Example 1 was produced.

(Examples 2 to 7 and Comparative Examples 1 to 3)

The wafer processing tapes of Examples 2 to 7 and Comparative Examples 1 to 3 were produced in the same manner as in Example 1 in the combination of Table 1.

[Inhibition of air intrusion and transfer marks]

The adhesive sheets of the examples and the comparative examples were placed in a polyethylene bag, degassed, and then heat-sealed, and the side plates made of polypropylene were attached to both end portions. Then, two PP tapes were tied and joined by fusion so as to become a cross. After storing each package in the refrigerator (5 ° C) for one month, it is taken out from the refrigerator, and stored in a packing box together with plate-shaped dry ice, placed on a transport truck, and retracted in a cold state. Between (about 1000km). After that, after storing in the refrigerator (5 ° C) for 3 months, the respective packages are opened, the rolls are returned to normal temperature, the package is opened, the rolls are unwound, and the air is visually observed between the adhesive layer and the release film. Intrusion, and the presence or absence of transfer marks. The results are shown in Table 2.

[Inhibition evaluation of pores after installation]

The adhesive sheets of the examples and the comparative examples were placed in a polyethylene bag, degassed, and then heat-sealed, and the side plates made of polypropylene were attached to both end portions. Then, two PP tapes were tied and joined by fusion so as to become a cross. After storing each package in the refrigerator (5 ° C) for one month, it is taken out from the refrigerator, and stored in a packing box together with plate-shaped dry ice, placed on a transport truck, and retracted in a cold state. Between (about 1000km). Thereafter, after storing in the refrigerator (5 ° C) for 3 months, each package was opened, the roll was returned to normal temperature, and the package was opened and mounted on a semiconductor wafer. Thereafter, it was confirmed by a microscope whether or not voids (air bubbles) were present on the bonding surface of the adhesive layer and the semiconductor wafer. The results are shown in Table 2. As a half For the conductor wafer, a wafer having a size of 12 inches and a thickness of 50 μm was used. The mounting conditions of the semiconductor wafer are as follows.

<Finishing conditions>

Pasting device: wafer mounter DAM-812M (made by Takatori)

Paste speed meter: 50mm/sec

Paste pressure: 0.1MPa

Pasting temperature: 60 ° C, 90 ° C

As shown in Table 2, in the tape for wafer processing according to Examples 1 to 3, 7, and 8, the thickness of the support member is 0.58 times or more and 0.87 times or less the thickness of the adhesive layer, and thus, although it can be seen The transfer mark is the extent to which heat can be removed by bonding when bonded to a semiconductor wafer. Further, no intrusion of air was observed between the adhesive layer and the release film, which was a good result in the evaluation of the inhibition of the pores after the mounting. In the tape for wafer processing according to the fifth and sixth embodiments, the thickness of the support member is 0.92 times or more and less than 1.0 times the thickness of the adhesive layer, so that a portion between the adhesive layer and the release film is seen in a part. The intrusion of air and the transfer mark are good results in the suppression of the porosity of the post-installation pores when the bonding to the semiconductor wafer is performed by the heat at the time of bonding. In the tape for wafer processing according to the fourth embodiment, the thickness of the support member is 0.46 times the thickness of the adhesive layer. Therefore, a slightly stronger transfer mark is observed, and when bonded to the semiconductor wafer at 60 ° C, The generation of voids is observed in a part, but when it is bonded to a semiconductor wafer at 90 ° C, no pores are generated, which is a practically allowable range.

On the other hand, in the tape for wafer processing according to Comparative Example 1, since the support member is not provided, the transfer mark is strongly left, and when it is bonded to the semiconductor wafer at 90 ° C, a part of the tape is also formed. . Further, in the tape for wafer processing according to Comparative Example 2, since the thickness of the support member is larger than the thickness of the adhesive layer, intrusion of air is observed between the adhesive layer and the release film, and the adhesive layer is deformed. In the case of bonding to a semiconductor wafer at 90 ° C, voids are also formed in a part. The tape for wafer processing according to Comparative Example 3 is inferior to that of Comparative Example 2 Degree, but the thickness of the support member is larger than the thickness of the adhesive layer, so that intrusion of air is observed between a part of the adhesive layer and the release film, and in the case of bonding to the semiconductor wafer at 90 ° C, also in part A void is created.

10‧‧‧ Wafer processing tape

11‧‧‧ release film

11a‧‧‧1st

11b‧‧‧2nd

12‧‧‧ adhesive layer

13‧‧‧Adhesive film

13a‧‧‧Circular label

13b‧‧‧ peripherals

14‧‧‧Support members

Claims (15)

A tape for processing a wafer, comprising: a long release film; an adhesive layer disposed on the first surface of the release film and having a predetermined planar shape, and an adhesive film having a label And a peripheral portion surrounding the outer side of the label portion, the label portion is provided to cover the adhesive layer and is in contact with the release film around the adhesive layer, and has a predetermined planar shape; and a support member Provided on the second surface of the release film opposite to the first surface on which the adhesive layer and the pressure-sensitive adhesive film are provided, and provided at both end portions in the short-side direction of the release film; the support member It has a thickness of 0.3 times or more and less than 1.0 times the thickness of the above-mentioned adhesive layer. The tape for wafer processing according to the first aspect of the invention, wherein the support member has a linear expansion coefficient of 300 ppm/° C. or less. The tape for wafer processing according to claim 1 or 2, wherein a difference between a linear expansion coefficient of the support member and a linear expansion coefficient of the release film is 250 ppm/° C. or less. Such as the wafer processing tape of claim 1 or 2, wherein The pressure-sensitive adhesive film has a pressure-sensitive adhesive layer and a base material film, and a static friction coefficient between the base material film and the support member is 0.2 to 2.0. The wafer processing tape according to the first or second aspect of the invention, wherein the support member is provided on the second surface of the release film corresponding to the outer side of the adhesive layer provided on the first surface region. The tape for wafer processing according to claim 1 or 2, wherein the support member is continuously provided along a longitudinal direction of the release film. The tape for wafer processing according to claim 1 or 2, wherein the support member has a thickness equal to or greater than a thickness of the adhesive layer. The tape for wafer processing according to claim 1 or 2, wherein the support member is colored. The tape for wafer processing according to claim 8, wherein the support member is colored according to the type of the tape for wafer processing. The tape for wafer processing according to claim 8, wherein the support member is colored according to the thickness of the tape for wafer processing. Such as the wafer processing tape of claim 1 or 2, wherein The support member has a laminated structure of two or more layers. The wafer processing tape according to claim 1 or 2, wherein the support member is a resin film base selected from the group consisting of polyethylene terephthalate, polypropylene, and high density polyethylene. The material is coated with an adhesive tape for bonding the adhesive. The tape for wafer processing according to claim 1 or 2, wherein the tensile storage elastic modulus Eb of the adhesive film at 23 ° C and the tensile storage elasticity of the release film under the condition of 23 ° C The modulus Ea ratio Eb/Ea is 0.001 to 100. The tape for wafer processing according to claim 1 or 2, wherein a ratio Ta/Tb of a thickness Ta of the release film to a thickness Tb of the adhesive film is 0.07 to 2.5. The wafer processing tape according to claim 1 or 2, wherein the adhesive layer and the release film are in a T-peel test under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min. The peeling force F1 is 0.025 to 0.075 N/100 mm, and the peeling force F2 between the adhesive layer and the adhesive film is 0.08 to 10 N/100 mm, and F1 < F2.