TW201633388A - Wafer processing tape - Google Patents

Wafer processing tape Download PDF

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Publication number
TW201633388A
TW201633388A TW104140171A TW104140171A TW201633388A TW 201633388 A TW201633388 A TW 201633388A TW 104140171 A TW104140171 A TW 104140171A TW 104140171 A TW104140171 A TW 104140171A TW 201633388 A TW201633388 A TW 201633388A
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Taiwan
Prior art keywords
adhesive layer
film
adhesive
tape
support member
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TW104140171A
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Chinese (zh)
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TWI615890B (en
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杉山二朗
青山真沙美
佐久間登
大田郷史
木村和寛
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古河電氣工業股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The object of the present invention is to provide wafer processing tape capable of reducing the occurrence of a label trace, selecting a support member without reference to the thickness of an adhesive layer, and reducing the occurrence of entangling of air between an adhesive layer and an adhesive film. The present invention has the feature that the wafer processing tape comprises: a long mold releasing film (11); an adhesive layer (12) having a prescribed planar shape and provided on a first surface of the mold releasing film (11); an adhesive film (13) comprising a label part (13a) and a peripheral part (13b) surrounding the outside of the label part (13a), wherein the label part (13a) is configured to cover the adhesive layer (12) and provided in a manner of contacting with the mold releasing film (11) around the adhesive layer (12), and has the prescribed planner shape; and a support member (14) provided along a longitudinal edge direction of the mold releasing film (11) in the region including the portion corresponding to the adhesive layer (12) and not including the portion corresponding to the end in a short edge direction of the mold releasing film (11) of the label part (13a) on a second surface opposite to a first surface of the mold releasing film (11).

Description

晶圓加工用膠帶 Wafer processing tape

本發明涉及晶圓加工用膠帶,特別是涉及具有切割膠帶和晶粒接合薄膜的2個功能的晶圓加工用膠帶。 The present invention relates to a tape for wafer processing, and more particularly to a tape for wafer processing having two functions of a dicing tape and a die bond film.

最近,正在開發一種切割-晶粒接合膠帶,其兼具將半導體晶圓切斷分離(切割)為各個晶片時用於固定半導體晶圓的切割膠帶、和用於將切斷後的半導體晶片接著於引線框或封裝基板等、或者在堆疊封裝體中用於將半導體晶片彼此層疊、接著的晶粒接合薄膜(也稱為晶粒黏接薄膜)的2個功能。 Recently, a die-die bonding tape is being developed which combines a dicing tape for fixing a semiconductor wafer when the semiconductor wafer is cut and diced into individual wafers, and is used to follow the cut semiconductor wafer. A lead frame, a package substrate, or the like, or two functions of a die bond film (also referred to as a die attach film) for laminating semiconductor wafers on each other in a stacked package.

作為這樣的切割-晶粒接合膠帶,考慮到向晶圓的黏貼、切割時的向環框的安裝等的作業性,有時實施了預切割加工。 As such a dicing die-bonding tape, pre-cut processing may be performed in consideration of workability such as adhesion to a wafer or attachment to a ring frame at the time of dicing.

在圖4和圖5中示出預切割加工後的切割-晶粒接合膠帶的例子。圖4是表示將切割-晶粒接合膠帶捲繞成捲筒狀的狀態的圖,圖5(a)是切割-晶粒接合膠帶的平面圖,圖5(b)是基於圖5(a)的線B-B的剖面圖。切割- 晶粒接合膠帶50是由脫模薄膜51、接著劑層52和黏著薄膜53所構成。接著劑層52是被加工成與晶圓的形狀對應的圓形者,具有圓形標籤形狀。黏著薄膜53是去除了與切割用的環框的形狀對應的圓形部分的周邊區域,如圖所示,具有圓形標籤部53a和包圍其外側的周邊部53b。接著劑層52與黏著薄膜53的圓形標籤部53a以將其中心對齊的方式層疊,另外,黏著薄膜53的圓形標籤部53a覆蓋接著劑層52且在其周圍與脫模薄膜51接觸。 An example of a cut-die bond tape after pre-cut processing is shown in FIGS. 4 and 5. 4 is a view showing a state in which a dicing die-bonding tape is wound into a roll shape, FIG. 5(a) is a plan view of a dicing die bonding tape, and FIG. 5(b) is a view based on FIG. 5(a). A cross-sectional view of line BB. Cutting - The die bond tape 50 is composed of a release film 51, an adhesive layer 52, and an adhesive film 53. The subsequent agent layer 52 is a circular shape processed to correspond to the shape of the wafer, and has a circular label shape. The adhesive film 53 is a peripheral region in which a circular portion corresponding to the shape of the ring frame for cutting is removed, and as shown in the figure, has a circular label portion 53a and a peripheral portion 53b surrounding the outer side thereof. The adhesive layer 52 and the circular label portion 53a of the adhesive film 53 are laminated so as to be aligned with the center thereof, and the circular label portion 53a of the adhesive film 53 covers the adhesive layer 52 and is in contact with the release film 51 around the adhesive layer 51.

將晶圓切割時,從層疊狀態的接著劑層52及黏著薄膜53剝離脫模薄膜51,如圖6所示,在接著劑層52上黏貼半導體晶圓W的背面,在黏著薄膜53的圓形標籤部53a的外周部黏著固定切割用環框R。在該狀態下將半導體晶圓W切割,之後,對黏著薄膜53實施紫外線照射等之固化處理後拾取半導體晶片。此時,由於黏著薄膜53因固化處理而黏著力降低,因此容易從接著劑層52剝離,在背面附著了接著劑層52的狀態下拾取半導體晶片。附著於半導體晶片的背面的接著劑層52在之後將半導體晶片接著於引線框、封裝基板、或其他半導體晶片時,具有晶粒接合薄膜的功能。 When the wafer is diced, the release film 51 is peeled off from the adhesive layer 52 and the adhesive film 53 in a laminated state, and as shown in FIG. 6, the back surface of the semiconductor wafer W is adhered to the adhesive layer 52, and the film is adhered to the film 53. A cutting ring frame R is adhered to the outer peripheral portion of the label portion 53a. In this state, the semiconductor wafer W is cut, and then the adhesive film 53 is subjected to a curing treatment such as ultraviolet irradiation or the like, and then the semiconductor wafer is picked up. At this time, since the adhesive film 53 is weakened by the curing treatment, it is easy to peel off from the adhesive layer 52, and the semiconductor wafer is picked up while the adhesive layer 52 is adhered to the back surface. The adhesive layer 52 attached to the back surface of the semiconductor wafer has a function of a die-bonding film when the semiconductor wafer is subsequently attached to a lead frame, a package substrate, or other semiconductor wafer.

然而,就像上述那樣的晶片切割-晶片接合帶50而言,接著劑層52與黏著薄膜53的圓形標籤部53a層疊的部分比黏著薄膜53的周邊部53b厚。因此,作為製品捲繞成捲筒狀時,接著劑層52與黏著薄膜53的圓形標籤部53a的層疊部分、與黏著薄膜53的周邊部53a的高度差相 互重疊,從而發生高度差被轉印至柔軟的接著劑層52表面的現象,亦即圖7所示的那樣的轉印痕(也稱為標籤痕跡、皺褶、或捲繞痕跡)。這樣的轉印痕的產生特別是在接著劑層52由柔軟的樹脂形成的情況、存在厚度的情況及膠帶50的捲繞數多的情況等顯著。然後,若產生轉印痕,則存在由接著劑層與半導體晶圓的接著不良而導致在晶圓的加工時產生不良情況的可能性。 However, as in the wafer dicing-wafer bonding tape 50 as described above, the portion where the adhesive layer 52 and the circular label portion 53a of the adhesive film 53 are laminated is thicker than the peripheral portion 53b of the adhesive film 53. Therefore, when the product is wound into a roll shape, the height difference between the adhesive layer 52 and the laminated portion of the circular label portion 53a of the adhesive film 53 and the peripheral portion 53a of the adhesive film 53 The mutual overlap causes a phenomenon in which the height difference is transferred to the surface of the soft adhesive layer 52, that is, a transfer mark (also referred to as a label mark, a wrinkle, or a winding trace) as shown in FIG. The occurrence of such a transfer mark is remarkable particularly in the case where the adhesive layer 52 is formed of a soft resin, the case where the thickness is present, and the case where the number of windings of the tape 50 is large. Then, if a transfer mark is generated, there is a possibility that a defect occurs in the processing of the wafer due to a defect in the adhesion between the adhesive layer and the semiconductor wafer.

為了解決這樣的問題,正在開發一種晶圓加工用膠帶,其為在脫模薄膜的與設置有接著劑層及黏著薄膜的第1面相反的第2面上、且脫模薄膜的短邊方向兩端部設置支承構件(例如,參照專利文獻1)。由於這樣的晶圓加工用膠帶設置有支承構件,因此在將晶圓加工用膠帶捲繞成捲筒狀時,可以將施加至膠帶的捲繞壓力分散、或集中於支承構件,因此,可以抑制對接著劑層的轉印跡的形成。 In order to solve such a problem, a tape for wafer processing has been developed in which the release film is on the second surface opposite to the first surface on which the adhesive layer and the adhesive film are provided, and the short side direction of the release film. A support member is provided at both end portions (for example, refer to Patent Document 1). Since such a wafer processing tape is provided with a support member, when the wafer processing tape is wound into a roll shape, the winding pressure applied to the tape can be dispersed or concentrated on the support member, thereby suppressing Formation of a transprint of the adhesive layer.

現有技術文獻 Prior art literature 專利文獻 Patent literature

專利文獻1:日本專利第4360653號公報 Patent Document 1: Japanese Patent No. 4360653

然而,在上述專利文獻1中記載的晶圓加工用膠帶中,為了充分抑制對接著劑層的轉印跡的形成,需要將支 承構件的厚度設置為接著劑層的厚度以上,因此存在有在支承構件的選定上會有所限制的問題。另外,黏著薄膜覆蓋接著劑層且在其周圍與脫模薄膜接觸,但根據接著劑層的厚度,有時在脫模薄膜與黏著薄膜之間產生極小的空隙、殘留空氣(air)。上述專利文獻1中記載的晶圓加工用膠帶,係在脫模薄膜的短邊方向兩端部設置有支承構件,因此在將晶圓加工用膠帶捲繞成捲筒狀的狀態中,標籤部與在其上捲繞的脫模薄膜之間會成為中空結構,因此出現了存在上述空氣(air)移動而侵入至接著劑層與黏著薄膜之間的可能性的問題。侵入至接著劑層與黏著薄膜之間的空氣(air)也稱為孔隙(void),其存在有對於半導體晶圓W發生貼合不良、造成之後的半導體晶圓W的切割工程或晶片的拾取工程、接合工程的良率降低的可能性。 However, in the tape for wafer processing described in Patent Document 1, in order to sufficiently suppress the formation of the transfer of the adhesive layer, it is necessary to support the tape. The thickness of the bearing member is set to be greater than the thickness of the adhesive layer, so there is a problem that there is a limitation in the selection of the supporting member. Further, the adhesive film covers the adhesive layer and is in contact with the release film around the adhesive film. However, depending on the thickness of the adhesive layer, extremely small voids and residual air may be generated between the release film and the adhesive film. In the tape for processing a wafer according to the above-mentioned Patent Document 1, since the support member is provided at both end portions in the short-side direction of the release film, the label portion is in a state in which the wafer processing tape is wound into a roll shape. There is a problem that a hollow structure is formed between the release film wound thereon, and thus there is a possibility that the above air moves to invade between the adhesive layer and the adhesive film. The air invaded between the adhesive layer and the adhesive film is also called void, which has a poor bonding to the semiconductor wafer W, causing subsequent cutting of the semiconductor wafer W or wafer pick-up. The possibility of a decrease in the yield of engineering and joining works.

因此,本發明的課題在於提供一種晶圓加工用膠帶,其可以減少標籤痕跡的產生,且可以不論接著劑層的厚度為何而選擇支承構件,同時可以減少在接著劑層與黏著薄膜之間捲入空氣(air)。 Accordingly, an object of the present invention is to provide a tape for wafer processing which can reduce the occurrence of label marks, and can select a support member regardless of the thickness of the adhesive layer, and can reduce the roll between the adhesive layer and the adhesive film. Into the air (air).

為了解決以上的課題,本發明所涉及的晶圓加工用膠帶的特徵在於具有:長條脫模薄膜;接著劑層,設置在前述脫模薄膜的第1面上、且具有預定的平面形狀;黏著薄膜,具有標籤部和包圍前述標籤部的外側的周邊部,前述 標籤部以覆蓋前述接著劑層、且在前述接著劑層的周圍與前述脫模薄膜接觸的方式設置,並且具有預定的平面形狀;以及支承構件,設置在前述脫模薄膜的與設置有前述接著劑層和前述黏著薄膜的第1面相反的第2面上,並且在包含與前述接著劑層對應的部分、且不包含與前述標籤部的在前述脫模薄膜的短邊方向上的端部對應的部分的區域內,沿前述脫模薄膜的長邊方向設置。 In order to solve the above problems, the tape for wafer processing according to the present invention includes: a long release film; and an adhesive layer provided on the first surface of the release film and having a predetermined planar shape; An adhesive film having a label portion and a peripheral portion surrounding an outer side of the label portion, the aforementioned The label portion is provided to cover the adhesive layer and is in contact with the release film around the adhesive layer, and has a predetermined planar shape; and a support member provided on the release film and provided with the aforementioned a second surface opposite to the first surface of the adhesive film, and including a portion corresponding to the adhesive layer, and not including an end portion of the label portion in the short side direction of the release film In the region of the corresponding portion, it is disposed along the longitudinal direction of the release film.

另外,上述半導體加工用膠帶,係上述支承構件設置於上述脫模薄膜的短邊方向的中央部為較佳。 Further, in the above-mentioned tape for semiconductor processing, it is preferable that the support member is provided at a central portion in the short-side direction of the release film.

另外,上述半導體加工用膠帶,係上述支承構件中,上述脫模薄膜的短邊方向的寬度為10~50mm較佳。 Further, in the above-mentioned support member, the tape for semiconductor processing preferably has a width in the short-side direction of the release film of 10 to 50 mm.

根據本發明,可以減少標籤痕跡的產生,且可以不論接著劑層的厚度為何而選擇支承構件,同時可以減少在接著劑層與黏著薄膜之間捲入空氣。 According to the present invention, the generation of the label trace can be reduced, and the support member can be selected regardless of the thickness of the adhesive layer, and the entrapment of air between the adhesive layer and the adhesive film can be reduced.

10‧‧‧晶圓加工用膠帶 10‧‧‧ Wafer processing tape

11‧‧‧脫模薄膜 11‧‧‧ release film

12‧‧‧接著劑層 12‧‧‧ adhesive layer

13‧‧‧黏著薄膜 13‧‧‧Adhesive film

13a‧‧‧圓形標籤部 13a‧‧‧Circular label

13b‧‧‧周邊部 13b‧‧‧ peripherals

14、14'、14"‧‧‧支承構件 14, 14', 14" ‧ ‧ support members

圖1的(a)是本發明的實施方式所涉及的晶圓加工用膠帶的平面圖,(b)是(a)的基於線A-A的剖面圖。 Fig. 1(a) is a plan view showing a tape for wafer processing according to an embodiment of the present invention, and Fig. 1(b) is a cross-sectional view taken along line A-A of (a).

圖2是本發明的另一實施方式所涉及的晶圓加工用膠帶的剖面圖。 2 is a cross-sectional view showing a tape for wafer processing according to another embodiment of the present invention.

圖3是本發明的又另一實施方式所涉及的晶圓加工用膠帶的剖面圖。 3 is a cross-sectional view showing a tape for wafer processing according to still another embodiment of the present invention.

圖4是以往的晶圓加工用膠帶的立體圖。 4 is a perspective view of a conventional tape for wafer processing.

圖5的(a)為以往的晶圓加工用膠帶的平面圖,(b)為(a)的基於線B-B的剖面圖。 Fig. 5 (a) is a plan view of a conventional tape for wafer processing, and Fig. 5 (b) is a cross-sectional view taken along line B-B of (a).

圖6為顯示晶圓加工用膠帶與切割用環框貼合的狀態的剖面圖。 6 is a cross-sectional view showing a state in which a tape for wafer processing is bonded to a ring frame for dicing.

圖7為用於說明以往的晶圓加工用膠帶的不良情況的示意圖。 FIG. 7 is a schematic view for explaining a problem of the conventional wafer processing tape.

以下基於附圖對本發明的實施方式詳細地說明。圖1(a)是本發明的實施方式所涉及的晶圓加工用膠帶(切割-晶粒接合膠帶)的平面圖,圖1(b)是圖1(a)的基於線A-A的剖面圖。 Embodiments of the present invention will be described in detail below based on the drawings. Fig. 1(a) is a plan view showing a tape for processing a wafer (cut-die bonding tape) according to an embodiment of the present invention, and Fig. 1(b) is a cross-sectional view taken along line A-A of Fig. 1(a).

如圖1(a)及圖1(b)所示,晶圓加工用膠帶10具有長條脫模薄膜11、接著劑層12、黏著薄膜13及支承構件14。 As shown in FIGS. 1(a) and 1(b), the wafer processing tape 10 has a long release film 11, an adhesive layer 12, an adhesive film 13, and a support member 14.

接著劑層12設置於脫模薄膜的第1面上,具有與晶圓的形狀對應的圓形標籤形狀。黏著薄膜13具有圓形標籤部13a和包圍該圓形標籤部13a的外側的周邊部13b,前述圓形標籤部13a以覆蓋接著劑層12、且在接著劑層12的周圍與脫模薄膜接觸的方式設置。周邊部13b包括將圓形標籤部13a的外側完全包圍的形態、和如圖所示的不完全包圍的形態。圓形標籤部13a具有與切割用的環框對應的形狀。而且,支承構件14設置在脫模薄膜11的與 設置有接著劑12及黏著薄膜13的第1面11a相反的第2面11b上,並且包含與接著劑層12對應的部分、且不包含與圓形標籤部13a的在脫模薄膜11的短邊方向上的端部對應的部分的區域r。 The subsequent agent layer 12 is provided on the first surface of the release film, and has a circular label shape corresponding to the shape of the wafer. The adhesive film 13 has a circular label portion 13a and a peripheral portion 13b surrounding the outer side of the circular label portion 13a, and the circular label portion 13a covers the adhesive layer 12 and is in contact with the release film around the adhesive layer 12. Way to set. The peripheral portion 13b includes a form in which the outer side of the circular label portion 13a is completely surrounded, and a form that is not completely surrounded as shown in the drawing. The circular label portion 13a has a shape corresponding to the ring frame for cutting. Moreover, the support member 14 is disposed on the release film 11 The second surface 11b opposite to the first surface 11a of the adhesive film 12 and the adhesive film 13 is provided, and includes a portion corresponding to the adhesive layer 12 and does not include a short portion of the circular label portion 13a on the release film 11. A region r of a portion corresponding to the end portion in the side direction.

以下,對本實施方式的晶圓加工用膠帶10的各構成要素詳細地說明。 Hereinafter, each component of the wafer processing tape 10 of the present embodiment will be described in detail.

(脫模薄膜) (release film)

作為本發明的晶圓加工用膠帶10中使用的脫模薄膜11,可以使用聚酯(PET、PBT、PEN、PBN、PTT)系、聚烯烴(PP、PE)系、共聚物(EVA、EEA、EBA)系、或將這些材料一部分置換從而進一步將接著性、機械強度提升的膜。另外,亦可為該些膜的層疊體。 As the release film 11 used in the wafer processing tape 10 of the present invention, polyester (PET, PBT, PEN, PBN, PTT), polyolefin (PP, PE), and copolymer (EVA, EEA) can be used. , EBA), or a film that replaces a part of these materials to further improve adhesion and mechanical strength. Further, it may be a laminate of these films.

脫模薄膜的厚度沒有特別限制,可以適當設定,25~50μm為較佳。 The thickness of the release film is not particularly limited and can be appropriately set, and 25 to 50 μm is preferable.

(接著劑層) (adhesive layer)

本發明的接著劑層12如上前述,具有在脫模薄膜11的第1面11a上形成、與晶圓的形狀對應的圓形標籤形狀。 As described above, the adhesive layer 12 of the present invention has a circular label shape formed on the first surface 11a of the release film 11 and corresponding to the shape of the wafer.

當半導體晶圓等被貼合並切割後,在拾取晶片時,接著劑層12作為附著於晶圓背面且將晶片固定於基板、引線框時的接著劑來使用。作為接著劑層12,較佳係亦可以使用含有選自環氧系樹脂、丙烯酸系樹脂,酚醛系樹脂 中的至少1種的黏接著劑等。除此以外,也可以使用聚醯亞胺系樹脂、矽酮系樹脂。其厚度可以適當設定,但5~100μm左右為較佳。 After the semiconductor wafer or the like is pasted and diced, the adhesive layer 12 is used as an adhesive when it is attached to the back surface of the wafer and the wafer is fixed to the substrate or the lead frame. As the adhesive layer 12, it is preferable to use a resin selected from the group consisting of an epoxy resin, an acrylic resin, and a phenol resin. At least one of the adhesives and the like. In addition to this, a polyimide-based resin or an anthrone-based resin can also be used. The thickness can be appropriately set, but it is preferably about 5 to 100 μm.

(黏著薄膜) (adhesive film)

本發明的黏著薄膜13如上前述,具有與切割用的環框的形狀對應的圓形標籤部13a和包圍其外側的周邊部13b。可以通過預切割加工,從薄膜狀黏著劑去除圓形標籤部13a的周邊區域來形成這樣的黏著薄膜。 As described above, the adhesive film 13 of the present invention has a circular label portion 13a corresponding to the shape of the ring frame for dicing and a peripheral portion 13b surrounding the outer side thereof. Such an adhesive film can be formed by removing the peripheral region of the circular label portion 13a from the film-like adhesive by pre-cut processing.

作為黏著薄膜13,沒有特別限制,只要具有將晶圓切割時晶圓不剝離的充分的黏著力,在切割後拾取晶圓時表現出可以容易地從接著劑層剝離的低的黏著力即可。例如,可以適宜地使用在基材薄膜設置了黏著劑層的黏著薄膜。 The adhesive film 13 is not particularly limited as long as it has sufficient adhesion to prevent the wafer from being peeled off when the wafer is diced, and exhibits a low adhesion which can be easily peeled off from the adhesive layer when the wafer is picked up after dicing. . For example, an adhesive film in which an adhesive layer is provided on a substrate film can be suitably used.

作為黏著薄膜13的基材薄膜,只要為以往公知的基材薄膜就可以沒有特別限制地使用,但使用放射線固化性的材料作為後述的黏著劑層時,係使用具有放射線透射性者為較佳。 The base film of the adhesive film 13 is not particularly limited as long as it is a conventionally known base film. However, when a radiation curable material is used as an adhesive layer to be described later, it is preferred to use a radiation-transmitting property. .

例如,作為其材料,可列舉出聚乙烯、聚丙烯、乙烯-丙烯共聚物、聚丁烯-1、聚-4-甲基戊烯-1、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸乙酯共聚物、乙烯-丙烯酸甲酯共聚物、乙烯-丙烯酸共聚物、離子聚合物等之α-烯烴的均聚物或共聚物或該等的混合物、聚氨酯、苯乙烯-乙烯-丁烯或戊烯系共聚物、聚醯胺-多元醇共聚物等熱塑性彈 性體、及該等的混合物。另外,基材薄膜亦可為從該等的群所選的2種以上的材料混合者,該等亦可為單層或多層化者。 For example, examples of the material thereof include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, and ethylene-acrylic acid B. a homopolymer or copolymer of an α-olefin of an ester copolymer, an ethylene-methyl acrylate copolymer, an ethylene-acrylic acid copolymer, an ionic polymer, or the like, a mixture thereof, a polyurethane, a styrene-ethylene-butene or a pentane Thermoplastic bombs such as olefin copolymers and polyamine-polyol copolymers Sex, and mixtures of these. Further, the base film may be a mixture of two or more materials selected from the group, and these may be a single layer or a multilayer.

基材薄膜的厚度沒有特別限制,可以適當設定,但50~200μm為較佳。 The thickness of the base film is not particularly limited and may be appropriately set, but 50 to 200 μm is preferable.

使用於黏著薄膜13的黏著劑層的樹脂並沒有特別限制,可使用被使用於黏著劑之公知的氯化聚丙烯樹脂、丙烯酸樹脂、聚酯樹脂、聚氨酯樹脂、環氧樹脂等。 The resin to be used for the adhesive layer of the adhesive film 13 is not particularly limited, and a known chlorinated polypropylene resin, an acrylic resin, a polyester resin, a urethane resin, an epoxy resin or the like which is used for the adhesive can be used.

在黏著劑層13的樹脂中適當地混合丙烯酸系黏著劑、放射線聚合性化合物、光聚合引發劑、固化劑等來調製黏著劑為較佳。黏著劑層13的厚度沒有特別限制而可以適當設定,但5~30μm為較佳。 It is preferred to appropriately mix an acrylic pressure-sensitive adhesive, a radiation polymerizable compound, a photopolymerization initiator, a curing agent, and the like in the resin of the pressure-sensitive adhesive layer 13 to prepare an adhesive. The thickness of the adhesive layer 13 is not particularly limited and can be appropriately set, but 5 to 30 μm is preferable.

將放射線聚合性化合物混合於黏著劑層,可容易藉由放射線固化來從接著劑層剝離。該放射線聚合性化合物,可以使用例如藉由光照射而可實現三維網狀化之在分子內具有至少2個以上光聚合性碳-碳雙鍵的低分子量化合物。 The radiation polymerizable compound is mixed with the adhesive layer, and can be easily peeled off from the adhesive layer by radiation curing. As the radiation polymerizable compound, for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in the molecule which can be three-dimensionally networked by light irradiation can be used.

具體而言,可適用三羥甲基丙烷三丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇單羥基五丙烯酸酯、二季戊四醇六丙烯酸酯、1,4-丁烯乙二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、聚乙二醇二丙烯酸酯或寡酯丙烯酸酯等。 Specifically, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butene glycol diacrylate can be applied. Ester, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate or oligoester acrylate, and the like.

又,除了像上述那樣的丙烯酸酯系化合物以外,也可以使用胺基甲酸乙酯丙烯酸酯系寡聚物。胺基甲酸乙酯丙 烯酸酯系寡聚物,係可在使聚酯型或聚醚型等的多元醇化合物與多元異氰酸酯化合物(例如,2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、1,3-苯二亞甲基二異氰酸酯、1,4-苯二亞甲基二異氰酸酯、二苯基甲烷4,4-二異氰酸酯等)反應而獲得之末端異氰酸酯氨基甲酸乙酯預聚物中,使具有羥基的丙烯酸酯或甲基丙烯酸酯(例如,丙烯酸-2-羥基乙酯、甲基丙烯酸-2-羥基乙酯、丙烯酸-2-羥基丙酯、甲基丙烯酸-2-羥基丙酯、聚乙二醇丙烯酸酯、聚乙二醇甲基丙烯酸酯等)反應而獲得。 Further, in addition to the acrylate-based compound as described above, a urethane acrylate-based oligomer may be used. Ethyl urethane The enoate oligomer can be a polyol compound such as a polyester or a polyether, and a polyvalent isocyanate compound (for example, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1,3) a terminal isocyanate urethane prepolymer obtained by reacting - benzene dimethylene diisocyanate, 1,4-benzene dimethylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc. A hydroxy acrylate or methacrylate (for example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethyl b It is obtained by reacting a glycol acrylate, polyethylene glycol methacrylate or the like.

亦在黏著劑層中,混合由上述的樹脂中所選擇的2種以上者。 In the adhesive layer, two or more selected from the above resins are also mixed.

使用光聚合引發劑時,可以使用例如異丙基安息香醚、異丁基安息香醚、二苯甲酮、米其勒酮(Michler’s ketone)、氯噻噸酮、十二烷基噻噸酮、二甲基噻噸酮、二乙基噻噸酮、苯偶醯二甲基縮酮、α-羥基環己基苯基酮、2-羥基甲基苯基丙烷等。該等光聚合引發劑的混合量,較佳的係相對於丙烯酸系共聚物100質量份,為0.01~5質量份。 When a photopolymerization initiator is used, for example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecyl thioxanthone, and the like can be used. Methyl thioxanthone, diethyl thioxanthone, benzoin dimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenylpropane, and the like. The amount of the photopolymerization initiator to be mixed is preferably 0.01 to 5 parts by mass based on 100 parts by mass of the acrylic copolymer.

(支承構件) (support member)

支承構件14設置在脫模薄膜11的與設置有接著劑12和黏著薄膜13的第1面11a相反的第2面11b上,並且包含與接著劑層12對應的部分、且不包含與圓形標籤部13a的在脫模薄膜11的短邊方向上的端部對應的部分 的區域r內沿脫模薄膜11的長邊方向設置。以設置像這樣的支承構件14的方式,在將晶圓加工用膠帶10捲繞成捲筒狀時,由於是對存在支承構件14的部分施加壓力,因此不會出現下述情況:接著劑層12與黏著薄膜13的圓形標籤部13a的層疊部分;及黏著薄膜13的周邊部13a的高度差相互重疊,高度差作為標籤痕跡而被轉印至接著劑層12表面。另外,在將晶圓加工用膠帶10捲繞成捲筒狀的狀態中,由於是對存在支承構件14的部分施加壓力,圓形標籤部13a的在脫模薄膜11的短邊方向上的端部不受拘束,因此藉由接著劑層12的厚度,殘留於脫模薄膜11與圓形標籤部13a之間產生的間隙內的空氣(air)會被排出至圓形標籤部13a的外側。 The support member 14 is provided on the second surface 11b of the release film 11 opposite to the first surface 11a on which the adhesive 12 and the adhesive film 13 are provided, and includes a portion corresponding to the adhesive layer 12, and does not include a circle a portion of the label portion 13a corresponding to the end portion of the release film 11 in the short-side direction The region r is disposed along the longitudinal direction of the release film 11. When the wafer processing tape 10 is wound into a roll shape so as to provide the support member 14 as described above, since pressure is applied to the portion where the support member 14 is present, the following situation does not occur: the adhesive layer The height difference between the laminated portion of the circular label portion 13a of the adhesive film 13 and the peripheral portion 13a of the adhesive film 13 overlaps with each other, and the height difference is transferred to the surface of the adhesive layer 12 as a label mark. In the state in which the wafer processing tape 10 is wound into a roll shape, the end of the circular label portion 13a in the short side direction of the release film 11 is applied to the portion where the support member 14 is present. Since the portion is not restrained, the air remaining in the gap between the release film 11 and the circular label portion 13a is discharged to the outside of the circular label portion 13a by the thickness of the adhesive layer 12.

設置支承構件14的位置只要為區域r內即可,如圖1所示,亦可設置於區域r的整個區域,也可設置於區域r之一部分的任意位置。在設置於區域r的一部分時,如圖2、3所示,在脫模薄膜的短邊方向的中央部設置支承構件14'、14"為較佳。此外,在區域r的一部分設置支承構件14時,雖有時在接著劑層12產生支承構件14的轉印痕,但此時的轉印痕在脫模薄膜11的長邊方向以直線狀產生,因此在晶圓貼合時,即使在捲入孔隙的情況下亦會被貼合輥擠壓,孔隙從而被排出至標籤外,因此與隨機產生的標籤痕跡不同,不會成為問題。 The position at which the support member 14 is provided may be in the region r, and may be provided in the entire region r of the region r as shown in FIG. 1 or at any position in one portion of the region r. When it is provided in a part of the region r, as shown in Figs. 2 and 3, it is preferable to provide the support members 14' and 14" at the central portion in the short-side direction of the release film. Further, a support member is provided in a portion of the region r. At 1400, the transfer mark of the support member 14 is generated in the adhesive layer 12, but the transfer mark at this time is linearly formed in the longitudinal direction of the release film 11, so that even when the wafer is bonded In the case of the pores, it is also pressed by the bonding rolls, and the pores are discharged to the outside of the label, so that unlike the randomly generated label marks, it does not become a problem.

此外,區域r,雖亦可包含比圖1所示更靠外側、亦即直到與圓形標籤部13a的在脫模薄膜11的短邊方向上 的端部對應的部分附近為止,但為了藉由接著劑層12的厚度使殘留於脫模薄膜11與圓形標籤部13a之間產生的間隙內的空氣(air)更快速且容易向圓形標籤部13a的外側排出,而不過度遠離接著劑層12為較佳。 Further, the region r may include the outer side, as shown in FIG. 1, to the short side of the release film 11 up to the circular label portion 13a. The vicinity of the portion corresponding to the end portion is made to make the air remaining in the gap between the release film 11 and the circular label portion 13a faster and easier to round by the thickness of the adhesive layer 12. It is preferable that the outer side of the label portion 13a is discharged without excessively moving away from the adhesive layer 12.

脫模薄膜的短邊方向的寬度只要為與區域r內相當的大小即可,沒有特別限制,但10~50mm為較佳。 The width of the release film in the short-side direction is not particularly limited as long as it is equivalent to the inside of the region r, but 10 to 50 mm is preferable.

支承構件14的厚度無需與相當於接著劑層12與黏著薄膜13的圓形標籤部13a的層疊部分、與黏著薄膜13的周邊部13b的高度差的厚度、亦即接著劑層12相同或更大,可以適當選擇。晶圓加工用膠帶10,係由於在捲繞成捲筒狀時,對存在支承構件14的部分施加壓力,因此對不與支承構件14接觸的標籤部分不施加壓力,成為中空狀態,故可不論接著劑層12的厚度為何而防止標籤痕跡。不過,也可以設置為與接著劑層12相同、或其以上的厚度。另外,如圖3所示,也可以設置層疊了薄的黏著膠帶的支承構件14"。 The thickness of the support member 14 does not need to be the same as the thickness of the laminated portion corresponding to the circular label portion 13a of the adhesive layer 12 and the adhesive film 13 or the peripheral portion 13b of the adhesive film 13, that is, the adhesive layer 12 is the same or Large, you can choose as appropriate. The wafer processing tape 10 is pressed against the portion where the support member 14 is present when being wound into a roll shape, so that the label portion that is not in contact with the support member 14 is not in pressure and is in a hollow state. The thickness of the layer 12 is then prevented to prevent label marks. However, it may be provided to have the same thickness as or higher than the adhesive layer 12. Further, as shown in FIG. 3, a support member 14" in which a thin adhesive tape is laminated may be provided.

支承構件14雖係可沿著脫模薄膜11的長邊方向間斷地或連續地設置,但從更有效地抑制轉印痕產生的觀點來看,沿著基材薄膜11的長邊方向連續地設置為較佳。 The support member 14 is provided intermittently or continuously along the longitudinal direction of the release film 11, but is continuously disposed along the longitudinal direction of the base film 11 from the viewpoint of more effectively suppressing generation of transfer marks. It is better.

另外,支承構件14從防止晶圓加工用膠帶10的捲繞偏移的觀點來看,對黏著薄膜13具有某種程度的摩擦係數的材質者為較佳。由此,可以防止晶圓加工用膠帶10的捲繞偏移,得到可以高速捲繞、使捲繞數增大的效果。 Moreover, it is preferable that the support member 14 has a material having a certain coefficient of friction with respect to the adhesive film 13 from the viewpoint of preventing the winding offset of the wafer processing tape 10 . Thereby, it is possible to prevent the winding deviation of the wafer processing tape 10, and it is possible to obtain an effect that the winding can be performed at a high speed and the number of windings can be increased.

支承構件14與黏著薄膜13的基材薄膜之間的靜摩擦 係數,係0.2~2.0為較佳,0.6~1.6為更佳。若將晶圓加工用膠帶捲繞成捲筒狀,則設置於脫模薄膜11的第1面11a側的黏著薄膜13的圓形標籤部13a與設置於脫模薄膜11的第2面11b側的支承構件14會接觸,因此支承構件14與黏著薄膜13的基材薄膜之間的靜摩擦係數小至低於0.2時,在製造時或使用時變得容易發生捲繞偏移而操作性會發生惡化。另一方面,大於2.0時,黏著薄膜13的基材薄膜與支承構件14之間的阻力過大,而成為製造工程中序的操作性會發生惡化,或高速捲繞時等蛇行的原因。因此,藉由將兩者間的靜摩擦係數設定為上述範圍的方式,可以防止晶圓加工用膠帶10的捲繞偏移,且可得到能夠高速捲繞、使捲繞數增大的效果。 Static friction between the support member 14 and the substrate film of the adhesive film 13 The coefficient is preferably 0.2 to 2.0, and more preferably 0.6 to 1.6. When the wafer processing tape is wound into a roll shape, the circular label portion 13a of the adhesive film 13 provided on the first surface 11a side of the release film 11 and the second surface 11b side provided on the release film 11 are provided. The support member 14 is in contact with each other, and therefore, when the coefficient of static friction between the support member 14 and the base film of the adhesive film 13 is as small as less than 0.2, the winding deviation is liable to occur at the time of manufacture or use, and operability occurs. deterioration. On the other hand, when it is more than 2.0, the resistance between the base film of the adhesive film 13 and the support member 14 is excessively large, which deteriorates the operability in the manufacturing process, or causes a meandering during high-speed winding. Therefore, by setting the static friction coefficient between the two to the above range, the winding deviation of the wafer processing tape 10 can be prevented, and the effect of being able to be wound at a high speed and increasing the number of windings can be obtained.

本發明中,支承構件14與黏著薄膜13的基材薄膜之間的靜摩擦係數,係可依據JIS K7125,藉由如以下般的測定方法而獲得。 In the present invention, the coefficient of static friction between the support member 14 and the base film of the adhesive film 13 can be obtained by the following measurement method in accordance with JIS K7125.

使分別被切割成25mm(寬度)×100mm(長度)的黏著薄膜13的基材薄膜與支承構件14的兩薄膜樣品重合,且固定下側的薄膜。接著,將重量200g的重物作為載荷W而載置於層疊的薄膜上,且以200mm/min的速度拉伸上側的薄膜,測定滑出時的力Fd(g),通過以下的式子求出靜摩擦係數(μd)。 The base film of each of the adhesive films 13 cut into 25 mm (width) × 100 mm (length) was superposed on the two film samples of the support member 14, and the film on the lower side was fixed. Next, a weight of 200 g was placed on the laminated film as a load W, and the film on the upper side was stretched at a speed of 200 mm/min, and the force Fd (g) at the time of slipping was measured, and the following formula was used. Static friction coefficient (μd).

μd=Fd/W Dd=Fd/W

作為支承構件14,例如可以適宜地使用在樹脂薄膜 基材塗布了黏接著劑的黏接著膠帶。通過在脫模薄膜11的第2面11b的預定位置黏貼像這樣的黏接著膠帶,可以形成本實施形態的晶圓加工用膠帶10。 As the supporting member 14, for example, a resin film can be suitably used. The substrate is coated with an adhesive adhesive tape. The adhesive tape 10 of the present embodiment can be formed by adhering such an adhesive tape to a predetermined position of the second surface 11b of the release film 11.

作為黏接著膠帶的基材樹脂,雖然只要滿足上述線性膨脹係數的範圍且能承受捲繞壓力就沒有特別限定,但從耐熱性、平滑性、和容易取得的方面來看,從聚對苯二甲酸乙二醇酯(PET)、聚丙烯及高密度聚乙烯中選擇為較佳。 The base resin of the adhesive tape is not particularly limited as long as it satisfies the range of the linear expansion coefficient and can withstand the winding pressure, but from the viewpoints of heat resistance, smoothness, and easy availability, from the viewpoint of polyethylene terephthalate Ethylene glycolate (PET), polypropylene and high density polyethylene are preferred.

關於黏接著膠帶的黏著劑的組成及物性,沒有特別限定,只要在晶圓加工用膠帶10的捲繞工程和保管工程中,不會從脫模薄膜11剝離即可。 The composition and physical properties of the adhesive for adhering the adhesive tape are not particularly limited, and may be removed from the release film 11 during the winding and storage of the wafer processing tape 10 .

另外,作為支承構件14,亦可使用已著色的支承構件。通過使用像這樣的著色支承構件,在將晶圓加工用膠帶捲繞成捲筒狀時,可以明確地識別膠帶的種類。例如,通過使著色支承構件14的顏色,隨著晶圓加工用膠帶的種類或厚度而不同,可以容易地識別膠帶的種類或厚度,且可以抑制、防止人為的錯誤的發生。 Further, as the support member 14, a colored support member may be used. By using such a colored support member, when the wafer processing tape is wound into a roll shape, the type of the tape can be clearly recognized. For example, by changing the color of the coloring support member 14 depending on the type or thickness of the tape for wafer processing, the type or thickness of the tape can be easily recognized, and the occurrence of human error can be suppressed and prevented.

實施例 Example

接著,對本發明的實施例進行說明,但本發明不限於該等實施例。 Next, embodiments of the invention will be described, but the invention is not limited to the embodiments.

(1)黏著薄膜的製作 (1) Production of adhesive film (黏著薄膜1A) (Adhesive film 1A)

在溶劑甲苯400g中,適當地調整滴入量而加入丙烯酸正丁酯128g、丙烯酸-2-乙基己酯307g、甲基丙烯酸甲酯67g、甲基丙烯酸1.5g、作為聚合引發劑的過氧化苯甲醯的混合液,調整反應溫度和反應時間,由此得到具有官能團的化合物(1)的溶液。 In 400 g of the solvent toluene, the amount of dropwise addition was appropriately adjusted, and 128 g of n-butyl acrylate, 307 g of 2-ethylhexyl acrylate, 67 g of methyl methacrylate, and 1.5 g of methacrylic acid were added, and peroxidation as a polymerization initiator was added. A mixed solution of benzamidine, the reaction temperature and the reaction time are adjusted, thereby obtaining a solution of the compound (1) having a functional group.

接著在該聚合物溶液中,適當調整滴入量而加入作為具有放射線固化性碳-碳雙鍵及官能團的化合物(2)的、另外由甲基丙烯酸與乙二醇合成的甲基丙烯酸-2-羥基乙酯2.5g、作為阻聚劑的氫醌並調整反應溫度及反應時間,由此得到具有放射線固化性碳-碳雙鍵的化合物(A)的溶液。接著,在化合物(A)溶液中,加入相對於化合物(A)溶液中的化合物(A)100質量份為1質量份之作為多異氰酸酯(B)的日本聚氨酯公司製:coronate L、作為光聚合引發劑的日本CHIBAGAIGI公司製:Irgacure-1840.5質量份、作為溶劑的乙酸乙酯150質量份並予以混合,調製放射線固化性的黏著劑組合物。 Then, in the polymer solution, the amount of the dropwise addition is appropriately adjusted, and methacrylic acid-2 synthesized by methacrylic acid and ethylene glycol as the compound (2) having a radiation-curable carbon-carbon double bond and a functional group is added. 2.5 g of hydroxyethyl ester, hydroquinone as a polymerization inhibitor, and the reaction temperature and reaction time were adjusted to obtain a solution of the compound (A) having a radiation curable carbon-carbon double bond. Next, in the solution of the compound (A), 100 parts by mass of the compound (A) in the compound (A) is added in an amount of 1 part by mass of a polyisocyanate (B) manufactured by Nippon Polyurethane Co., Ltd.: coronate L, as photopolymerization The initiator was prepared by Japan CHIBAGAIGI Co., Ltd.: Irgacure-1840.5 parts by mass and 150 parts by mass of ethyl acetate as a solvent, and mixed to prepare a radiation curable adhesive composition.

接著,將調製好黏著劑層組合物以乾燥膜厚為20μm的方式塗佈於厚度100μm的乙烯-乙酸乙烯酯共聚物基材薄膜,且以110℃乾燥3分鐘,製作成黏著薄膜1A。 Next, the prepared adhesive layer composition was applied to an ethylene-vinyl acetate copolymer base film having a thickness of 100 μm so as to have a dry film thickness of 20 μm, and dried at 110 ° C for 3 minutes to form an adhesive film 1A.

(2)脫模薄膜 (2) release film

使用了以下所示的脫模薄膜2A。 The release film 2A shown below was used.

脫模薄膜2A:厚度38μm的經脫模處理後的聚對苯二甲酸乙二醇酯薄膜 Release film 2A: release-treated polyethylene terephthalate film having a thickness of 38 μm

(3)接著劑層的形成 (3) Formation of an adhesive layer (接著劑層3A) (adhesive layer 3A)

在由作為環氧樹脂的甲酚酚醛型環氧樹脂(環氧當量197,分子量1200,軟化點70℃)50質量份、作為矽烷偶聯劑的γ-巰基丙基三甲氧基矽烷1.5質量份、γ-脲基丙基三乙氧矽烷3質量份、平均粒徑16nm的二氧化矽填料30質量份所構成的組合物中,加入環己酮並予以攪拌混合,進一步使用珠磨機混煉90分鐘。 50 parts by mass of cresol novolac type epoxy resin (epoxy equivalent 197, molecular weight 1200, softening point 70 ° C) as an epoxy resin, and 1.5 parts by mass of γ-mercaptopropyltrimethoxydecane as a decane coupling agent A composition comprising 3 parts by mass of γ-ureidopropyltriethoxysilane and 30 parts by mass of a cerium oxide filler having an average particle diameter of 16 nm, cyclohexanone was added thereto, stirred and mixed, and further kneaded using a bead mill. 90 minutes.

在其中加入丙烯酸類樹脂(質量平均分子量:80萬,玻璃轉移溫度-17℃)100質量份、作為6官能丙烯酸酯單體的二季戊四醇六丙烯酸酯5質量份、作為固化劑的六亞甲基二異氰酸酯的加成體0.5質量份、Curezol 2PZ(四國化成(公司)製商品名,2-苯基咪唑)2.5質量份,予以攪拌混合,進行真空脫氣,來得到接著劑。 100 parts by mass of an acrylic resin (mass average molecular weight: 800,000, glass transition temperature - 17 ° C), 5 parts by mass of dipentaerythritol hexaacrylate as a 6-functional acrylate monomer, and hexamethylene as a curing agent 0.5 parts by mass of an adduct of diisocyanate and 2.5 parts by mass of Curezol 2PZ (trade name of Shikoku Kasei Co., Ltd., 2-phenylimidazole) were stirred and mixed, and vacuum degassed to obtain an adhesive.

在脫模薄膜2A上塗佈上述接著劑,以110℃加熱乾燥1分鐘,形成膜厚為20μm的B階段狀態(熱固性樹脂的固化中間狀態)的塗膜,在脫模薄膜2A上形成接著劑層3A,並進行冷藏保管。 The above-mentioned adhesive was applied onto the release film 2A, and dried by heating at 110 ° C for 1 minute to form a coating film having a film thickness of 20 μm in a B-stage state (solidified state of the thermosetting resin), and an adhesive was formed on the release film 2A. Layer 3A is stored in a refrigerator.

(接著劑層3B) (adhesive layer 3B)

在脫模薄膜2A上塗佈上述接著劑,以110℃加熱乾燥1分鐘,形成膜厚為60μm的B階段狀態(熱固性樹脂的固化中間狀態)的塗膜,在脫模薄膜2A上形成接著劑層3B,並進行冷藏保管。 The above-mentioned adhesive was applied onto the release film 2A, and dried by heating at 110 ° C for 1 minute to form a coating film having a film thickness of 60 μm in a B-stage state (solidified state of the thermosetting resin), and an adhesive was formed on the release film 2A. Layer 3B is stored in a refrigerator.

(接著劑層3C) (adhesive layer 3C)

在脫模薄膜2A上塗布上述接著劑,以110℃加熱乾燥1分鐘,形成膜厚為120μm的B階段狀態(熱固性樹脂的固化中間狀態)的塗膜,在脫模薄膜2A上形成接著劑層3C,並進行冷藏保管。 The above-mentioned adhesive was applied onto the release film 2A, and dried by heating at 110 ° C for 1 minute to form a coating film having a film thickness of 120 μm in a B-stage state (solidified state of the thermosetting resin), and an adhesive layer was formed on the release film 2A. 3C, and keep it in a safe place.

(4)支承構件的製作 (4) Production of supporting members (支承構件4A) (support member 4A)

混合丙烯酸類樹脂(質量平均分子量:60萬,玻璃轉移溫度-20℃)100質量份、作為固化劑的聚異氰酸酯化合物(日本聚氨酯(公司)製,商品名:coronate L)10質量份來得到黏著劑組合物。 100 parts by mass of a mixed acrylic resin (mass average molecular weight: 600,000, glass transition temperature: -20 ° C), and 10 parts by mass of a polyisocyanate compound (manufactured by Nippon Polyurethane Co., Ltd., trade name: coronate L) as a curing agent Composition.

將上述黏著劑組合物以乾燥膜厚成為20μm的方式塗佈於厚度40μm的低密度聚乙烯薄膜,以110℃乾燥3分鐘,將所得到的黏接著膠帶切斷成寬度10mm,製作了支承構件4A。 The adhesive composition was applied to a low-density polyethylene film having a thickness of 40 μm so as to have a dry film thickness of 20 μm, dried at 110 ° C for 3 minutes, and the obtained adhesive tape was cut into a width of 10 mm to prepare a support member. 4A.

(支承構件4B) (support member 4B)

將上述黏著劑組合物以乾燥膜厚成為30μm的方式塗佈於厚度100μm的聚對苯二甲酸乙二醇酯薄膜,以110℃乾燥3分鐘,將所得到的黏接著膠帶切斷成寬度25mm,製作了支承構件4B。 The adhesive composition was applied to a polyethylene terephthalate film having a thickness of 100 μm so as to have a dry film thickness of 30 μm, dried at 110 ° C for 3 minutes, and the obtained adhesive tape was cut into a width of 25 mm. A support member 4B was produced.

(支承構件4C) (support member 4C)

除了將所得到的黏接著膠帶切斷成寬度25mm以外,其餘與支承構件4A同樣地,製作了支承構件4C。 The support member 4C was produced in the same manner as the support member 4A except that the obtained adhesive tape was cut into a width of 25 mm.

(支承構件4D) (support member 4D)

除了將所得到的黏接著膠帶切斷成寬度50mm以外,其餘與支承構件4A同樣地,製作了支承構件4D。 The support member 4D was produced in the same manner as the support member 4A except that the obtained adhesive tape was cut into a width of 50 mm.

(實施例1) (Example 1)

使形成有冷藏保管之接著劑層3A的脫模薄膜2A恢復至常溫,且對對於接著劑層,將對脫模薄膜的切入深度調整為10μm以下而進行直徑220mm的圓形預切割加工。之後,去除接著劑層的不要部分,將黏著薄膜1A以其黏著劑層與接著劑層接觸的方式,使脫模薄膜2A在室溫下分層。然後,相對於黏著薄膜1A,將對脫模薄膜的切入深度調節為10μm以下,而與接著劑層同心圓狀地進行直徑290mm的圓形預切割加工。接著,在脫模薄膜2A之與設置有接著劑層及黏著薄膜的第1面相反的第2面、且位於脫模薄膜2A的短邊方向中央部貼合支承構件4A,製作了具有圖2所示的構造的實施例1的晶圓加工用膠帶。 The release film 2A in which the adhesive layer 3A for refrigerating storage is formed is returned to normal temperature, and the cutting depth of the release film is adjusted to 10 μm or less for the adhesive layer, and a circular pre-cutting process of 220 mm in diameter is performed. Thereafter, the unnecessary portion of the adhesive layer is removed, and the release film 1A is layered at room temperature by bringing the adhesive film 1 into contact with the adhesive layer. Then, with respect to the adhesive film 1A, the depth of cut of the release film was adjusted to 10 μm or less, and a circular pre-cut process of 290 mm in diameter was performed concentrically with the adhesive layer. Then, the support member 4A is bonded to the second surface of the release film 2A opposite to the first surface on which the adhesive layer and the adhesive film are provided, and the center portion in the short-side direction of the release film 2A is bonded to the release film 2A. The wafer processing tape of Example 1 of the configuration shown.

(實施例2)除了使用支承構件4B來代替支承構件4A以外,其餘與實施例1同樣地,製作了實施例2的晶圓加工用膠帶。 (Example 2) A wafer processing tape of Example 2 was produced in the same manner as in Example 1 except that the support member 4B was used instead of the support member 4A.

(實施例3) (Example 3)

除了使用接著劑層3B來代替接著劑層3A以外,其餘與實施例1同樣地,製作了實施例3的晶圓加工用膠帶。 The wafer processing tape of Example 3 was produced in the same manner as in Example 1 except that the adhesive layer 3B was used instead of the adhesive layer 3A.

(實施例4) (Example 4)

除了使用接著劑層3B來代替接著劑層3A以外,其餘與實施例2同樣地,製作了實施例4的晶圓加工用膠帶。 The wafer processing tape of Example 4 was produced in the same manner as in Example 2 except that the adhesive layer 3B was used instead of the adhesive layer 3A.

(實施例5) (Example 5)

除了使用接著劑層3C來代替接著劑層3A以外,其餘與實施例1同樣地,製作了實施例5的晶圓加工用膠帶。 The wafer processing tape of Example 5 was produced in the same manner as in Example 1 except that the adhesive layer 3C was used instead of the adhesive layer 3A.

(實施例6) (Example 6)

除了使用接著劑層3C來代替接著劑層3A以外,其餘與實施例2同樣地,製作了實施例6的晶圓加工用膠帶。 The wafer processing tape of Example 6 was produced in the same manner as in Example 2 except that the adhesive layer 3C was used instead of the adhesive layer 3A.

(實施例7) (Example 7)

除了使用支承構件4C來代替支承構件4A以外,其餘與實施例3同樣地,製作了實施例7的晶圓加工用膠帶。 The wafer processing tape of Example 7 was produced in the same manner as in Example 3 except that the support member 4C was used instead of the support member 4A.

(實施例8) (Example 8)

除了使用支承構件4D來代替支承構件4C以外,其餘與實施例7同樣地,製作了實施例8的晶圓加工用膠帶。 The wafer processing tape of Example 8 was produced in the same manner as in Example 7 except that the support member 4D was used instead of the support member 4C.

(比較例1) (Comparative Example 1)

使形成有冷藏保管之接著劑層3A的脫模薄膜2A恢復至常溫,相對於接著劑層,將對脫模薄膜的切入深度調整為10μm以下,而進行直徑220mm的圓形預切割加工。之後,去除接著劑層的不要部分,將黏著薄膜1A以其黏著劑層與接著劑層接觸的方式,使脫模薄膜2A在室溫下分層。然後,相對於黏著薄膜1A,將對脫模薄膜的切入深度調節為10μm以下,而與接著劑層同心圓狀地進行直徑290mm的圓形預切割加工,留下圓形標籤部和周邊部,去除了其他不要部分。接著,在脫模薄膜2A之與設置有接著劑層和黏著薄膜的第1面相反的第2面、且位於脫模薄膜2A的短邊方向兩端部貼合支承構件4A,製作了現有專利文獻1的具有圖1所示的構造的比較例1的晶圓加工用膠帶。 The release film 2A in which the adhesive layer 3A having the refrigerated storage is formed is returned to normal temperature, and the depth of cut of the release film is adjusted to 10 μm or less with respect to the adhesive layer, and a circular pre-cut process of 220 mm in diameter is performed. Thereafter, the unnecessary portion of the adhesive layer is removed, and the release film 1A is layered at room temperature by bringing the adhesive film 1 into contact with the adhesive layer. Then, with respect to the adhesive film 1A, the depth of cut-in of the release film is adjusted to 10 μm or less, and a circular pre-cut process of 290 mm in diameter is performed concentrically with the adhesive layer, leaving a circular label portion and a peripheral portion. Removed other unwanted parts. Then, the support member 4A is bonded to the second surface of the release film 2A opposite to the first surface on which the adhesive layer and the adhesive film are provided, and at both end portions in the short-side direction of the release film 2A, and the conventional patent is produced. The tape for wafer processing of Comparative Example 1 having the structure shown in Fig. 1 of Document 1.

(比較例2) (Comparative Example 2)

除了使用支承構件4B來代替支承構件4A以外,其餘與比較例1同樣地,製作了比較例2的晶圓加工用膠帶。 A wafer processing tape of Comparative Example 2 was produced in the same manner as in Comparative Example 1, except that the support member 4B was used instead of the support member 4A.

(比較例3) (Comparative Example 3)

除了使用接著劑層3B來代替接著劑層3A以外,其餘與比較例1同樣地,製作了比較例3的晶圓加工用膠帶。 A wafer processing tape of Comparative Example 3 was produced in the same manner as in Comparative Example 1, except that the adhesive layer 3B was used instead of the adhesive layer 3A.

(比較例4) (Comparative Example 4)

除了使用支承構件4B來代替支承構件4A以外,其餘與比較例3同樣地,製作了比較例4的晶圓加工用膠帶。 A wafer processing tape of Comparative Example 4 was produced in the same manner as in Comparative Example 3, except that the support member 4B was used instead of the support member 4A.

(比較例5) (Comparative Example 5)

除了使用接著劑層3C來代替接著劑層3A以外,其餘與比較例2同樣地,製作了比較例5的晶圓加工用膠帶。 A wafer processing tape of Comparative Example 5 was produced in the same manner as in Comparative Example 2, except that the adhesive layer 3C was used instead of the adhesive layer 3A.

(比較例6) (Comparative Example 6)

除了不設置支承構件以外,其餘與比較例3同樣地,製成了比較例6的晶圓加工用膠帶。 A wafer processing tape of Comparative Example 6 was produced in the same manner as in Comparative Example 3 except that the support member was not provided.

(比較例7) (Comparative Example 7)

除了不設置支承構件以外,其餘與比較例5同樣地,製成了比較例7的晶圓加工用膠帶。 A wafer processing tape of Comparative Example 7 was produced in the same manner as in Comparative Example 5 except that the support member was not provided.

[標籤痕跡的抑制性的評價] [Evaluation of the inhibition of label marks]

以圓形形狀的黏著薄膜的數目成為300張的方式,將實施例和比較例的晶圓加工用膠帶捲繞成捲筒狀,製作了晶圓加工用膠帶捲筒。將所得到的晶圓加工用膠帶捲筒在冰箱內(5℃)保管1個月。之後,使晶圓加工用膠帶捲筒恢復至室溫後解開捲筒,以目視觀察有無標籤痕跡,基於以下的評價基準,以○、△、×的3個等級來評價晶圓加工用膠帶的轉印痕的抑制性。在表1和表2中示出結果。 The wafer processing tapes of the examples and the comparative examples were wound into a roll shape so that the number of the adhesive films having a circular shape was 300, and a tape roll for wafer processing was produced. The obtained wafer processing tape roll was stored in a refrigerator (5 ° C) for one month. After that, the wafer processing tape roll was returned to room temperature, and the roll was unwound, and the presence or absence of the label mark was visually observed. The wafer processing tape was evaluated in three levels of ○, Δ, and × based on the following evaluation criteria. The inhibition of the transfer marks. The results are shown in Tables 1 and 2.

○(良品):即使從各種角度目視觀察也無法確認標籤痕跡 ○ (good): It is impossible to confirm the label trace even if it is visually observed from various angles.

△(容許品):雖然可以確認標籤痕跡,但不足以對半導體裝置的加工工程造成影響的程度 △ (allowable product): Although it is possible to confirm the label trace, it is not sufficient to affect the processing of the semiconductor device.

×(不良品):可以確認對半導體裝置的加工工程帶來影響的標籤痕跡 × (defective product): Label traces that affect the processing of semiconductor devices can be confirmed

[空氣的捲入的抑制性的評價] [Evaluation of inhibition of air entrapment]

以圓形形狀的黏著薄膜的數目成為200張的方式,將實施例和比較例的晶圓加工用膠帶捲繞成捲筒狀,製作了晶圓加工用膠帶捲筒。將所得到的晶圓加工用膠帶捲筒放入包裝袋,在冰箱內(5℃)保管1個月後,在膠帶表面成為-50℃的乾冰環境下保管3天。之後,使晶圓加工用膠帶捲筒恢復至常溫後將包裝袋開封,解開捲筒,以目視觀察在接著劑層與黏著薄膜的圓形標籤部之間是否有空氣的捲入,將沒有空氣的捲入的評價為○(良品),將有空 氣的捲入的評價為×(不良品),進行晶圓加工用膠帶的空氣的捲入的抑制性的評價。在表1和表2中示出結果。 The wafer processing tapes of the examples and the comparative examples were wound into a roll shape so that the number of the adhesive films having a circular shape was 200, and a tape roll for wafer processing was produced. The obtained roll of the wafer processing tape was placed in a packaging bag, stored in a refrigerator (5 ° C) for one month, and then stored in a dry ice environment at -50 ° C for 3 days. After that, the wafer processing tape roll is returned to normal temperature, the package bag is unsealed, and the roll is unwound to visually observe whether or not air is caught between the adhesive layer and the circular label portion of the adhesive film. Air enrollment is evaluated as ○ (good) and will be available The evaluation of the intrusion of the gas was evaluated as × (defective product), and the suppression of the entrapment of the air of the tape for the wafer processing was performed. The results are shown in Tables 1 and 2.

如表1所示,實施例1~8所涉及的晶圓加工用膠帶,係由於在脫模薄膜的與第1面相反的第2面上、且包含與接著劑層對應的部分、不包含與標籤部的在脫模薄膜的短邊方向上的端部對應的部分的區域內,沿脫模薄膜的長邊方向而設置有支承構件,因此成為在標籤痕跡的抑制性、空氣的捲入的抑制性方面皆優異的結果。 As shown in Table 1, the tape for wafer processing according to Examples 1 to 8 is based on the second surface opposite to the first surface of the release film, and includes a portion corresponding to the adhesive layer, and does not include In the region of the portion of the label portion corresponding to the end portion in the short-side direction of the release film, the support member is provided along the longitudinal direction of the release film, so that the label trace is suppressed and the air is entangled. The inhibitory aspects are excellent results.

與此相對,支承構件設置於脫模薄膜的兩端部之比較例1~4所涉及的晶圓加工用膠帶,係如表2所示,成為空氣的捲入的抑制性差的結果。沒有設置支承構件的比較例6、7所涉及的晶圓加工用膠帶,係雖空氣的捲入的抑制性成為優異的結果,但標籤痕跡的抑制性中成為差的結果。 On the other hand, in the wafer processing tapes of Comparative Examples 1 to 4 in which the support members were provided at both end portions of the release film, as shown in Table 2, the suppression of the entrapment of air was poor. The tape for wafer processing according to Comparative Examples 6 and 7 in which the support member is not provided is excellent in the suppression of the entrapment of air, but the result of the suppression of the label trace is poor.

此外,確認到:接著劑層與支承構件的厚度相同的比較例3所涉及的晶圓加工用膠帶,係不足以對半導體裝置 的加工工程造成影響的程度的標籤痕跡。與此相對,實施例3所涉及的晶圓加工用膠帶中,即使接著劑層與支承構件的厚度相同,也不產生標籤痕跡。 Further, it was confirmed that the tape for wafer processing according to Comparative Example 3 in which the thickness of the adhesive layer and the support member are the same is insufficient for the semiconductor device. The processing engineering caused a trace of the extent of the impact of the label. On the other hand, in the tape for wafer processing according to the third embodiment, even if the thickness of the adhesive layer and the support member are the same, no label trace is generated.

10‧‧‧晶圓加工用膠帶 10‧‧‧ Wafer processing tape

11‧‧‧脫模薄膜 11‧‧‧ release film

11a‧‧‧第1面 11a‧‧‧1st

11b‧‧‧第2面 11b‧‧‧2nd

12‧‧‧接著劑層 12‧‧‧ adhesive layer

13‧‧‧黏著薄膜 13‧‧‧Adhesive film

13a‧‧‧圓形標籤部 13a‧‧‧Circular label

13b‧‧‧周邊部 13b‧‧‧ peripherals

14‧‧‧支承構件 14‧‧‧Support members

r‧‧‧區域 R‧‧‧ area

Claims (3)

一種晶圓加工用膠帶,其特徵在於,具有:長的脫模薄膜;接著劑層,設置在前述脫模薄膜的第1面上、且具有預定的平面形狀;黏著薄膜,具有標籤部和包圍前述標籤部的外側的周邊部,前述標籤部以覆蓋前述接著劑層、且在前述接著劑層的周圍與前述脫模薄膜接觸的方式設置,並且具有預定的平面形狀;以及支承構件,在前述脫模薄膜的與設置有前述接著劑層和黏著薄膜的第1面相反的第2面上,並且包含與前述接著劑層對應的部分、且不包含與前述標籤部的在前述脫模薄膜的短邊方向上的端部對應的部分的區域內,沿著前述脫模薄膜的長邊方向而設置。 A tape for processing a wafer, comprising: a long release film; an adhesive layer disposed on a first surface of the release film and having a predetermined planar shape; and an adhesive film having a label portion and surrounding a peripheral portion of the outer side of the label portion, wherein the label portion is provided so as to cover the adhesive layer and is in contact with the release film around the adhesive layer, and has a predetermined planar shape; and the support member is as described above a second surface of the release film opposite to the first surface on which the adhesive layer and the adhesive film are provided, and a portion corresponding to the adhesive layer and not including the release film of the label portion The region corresponding to the end portion in the short-side direction is provided along the longitudinal direction of the release film. 如申請專利範圍第1項之晶圓加工用膠帶,其特徵在於,前述支承構件設置於前述脫模薄膜的短邊方向的中央部。 The tape for wafer processing according to the first aspect of the invention is characterized in that the support member is provided at a central portion in the short-side direction of the release film. 如申請專利範圍第1或2項之晶圓加工用膠帶,其特徵在於,前述支承構件中,前述脫模薄膜的短邊方向的寬度為10~50mm。 The tape for wafer processing according to the first or second aspect of the invention is characterized in that, in the support member, the width of the release film in the short-side direction is 10 to 50 mm.
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