CN102250555B - Belt for wafer processing - Google Patents
Belt for wafer processing Download PDFInfo
- Publication number
- CN102250555B CN102250555B CN201010179460.7A CN201010179460A CN102250555B CN 102250555 B CN102250555 B CN 102250555B CN 201010179460 A CN201010179460 A CN 201010179460A CN 102250555 B CN102250555 B CN 102250555B
- Authority
- CN
- China
- Prior art keywords
- adhesive power
- mass parts
- bond layer
- binder layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Adhesives Or Adhesive Processes (AREA)
- Dicing (AREA)
Abstract
The invention provides a belt for wafer processing, and the belt can facilitate stripping between an adhesive layer and a binder layer, improve the picking-up success rate of semiconductor chips in a picking-up process, and simultaneously prevent the thin semiconductor chips from being damaged caused by increasing jacking force and jacking height of pins. The belt (10) for wafer processing comprises an adhesive film (12) composed of a base material film (12a) and the adhesive layer (12b) as well as the binder layer (13) laminated on the adhesive film (12), wherein the adhesive tension of the adhesive layer (12b) at 80 DEG C is less than 0.9 (N); and the adhesive tension ratio (A/B) of the adhesive tension (A) of the binder layer (13) at 80 DEG C to the adhesive tension of the adhesive layer (12b) at 80 DEG C is more than 6.0 and less than 7.0.
Description
Technical field
The present invention relates to the tape for processing wafer of a kind of cutting action for semiconductor wafer, pickup process, chip join (diebonding) operation.
Background technology
In the manufacturing process of semiconductor device, implement semiconductor wafer to cut off to be separated (cutting) be semiconductor core blade unit operation, the operation of semi-conductor chip that pickup is separated, further by chip join (installation, the mount) operation of the die bonding of pickup in lead frame and base plate for packaging etc.
In recent years, as the tape for processing wafer used in the manufacturing process of above-mentioned semiconductor device, such as, propose the tape for processing wafer being provided with binder layer on base material film, the tape for processing wafer with the structure being laminated with bond layer over the binder layer further (chip join film: DDF), and practical (such as with reference to patent documentation 1).
But, because above-mentioned chip join film must extend from the bond layer be fabricated onto between use with the time contacted of binder layer, therefore, two-layerly before use to merge, in the operation of the semi-conductor chip of the band bond layer of pickup singualtion, there is the problem can not peeled off smoothly between bond layer and binder layer.
Therefore, as the tape for processing wafer solving such problem, be known to a kind of tape for processing wafer, the semi-conductor chip of band bond layer, by specifying the second-order transition temperature (Tg) containing epoxy group(ing) acrylic copolymer of the iodine value with the ray polymerization compound of carbon-to-carbon double bond bonding and formation bond layer that form binder layer, can easily be peeled off (such as with reference to patent documentation 2) from binder layer by it.
Patent documentation 1: Japanese Unexamined Patent Publication 2-32181 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2005-303275 publication
In the tape for processing wafer recorded in above-mentioned patent documentation 2, the iodine value with the ray polymerization compound of carbon-to-carbon double bond bonding of binder layer is formed by regulation, realize the reduction of the adhesive power after radiation exposure, by regulation containing the second-order transition temperature (Tg) of epoxy group(ing) acrylic copolymer, realize the reduction of the adhesive power of bond layer under B-stage state or tape for processing wafer.That is, to binder layer and bond layer, improve according to the mode easily peeled off respectively.
But, be not considered the relation between binder layer and bond layer, there are the following problems: by combination, peels off easiness insufficient, the semi-conductor chip (hereinafter referred to as semi-conductor chip) of band bond layer suitably can not be picked up from the binder layer of tape for processing wafer.
In addition, when picking up, in order to make the stripping between binder layer and bond layer easy, jack-up power and the jack-up of the semi-conductor chip utilizing pin (pin) to carry out the downside from tape for processing wafer are highly increased, but, in recent years, there is the trend that semi-conductor chip is thinning, when semi-conductor chip is thinning, when increasing jack-up power, also there is the damaged such problem of chip.
Summary of the invention
Therefore, the present invention carries out to solve the above problems, its object is to provide a kind of tape for processing wafer, by making the stripping between binder layer and bond layer easy, improve the pickup success ratio of the semi-conductor chip in pickup process, meanwhile, the breakage of the thin semi-conductor chip highly caused by the jack-up power and jack-up that increase pin can be prevented.
Present inventors etc. study with keen determination to above-mentioned problem, found that, be formed with base material film successively, in the tape for processing wafer of binder layer and bond layer, the adhesive power of bond layer when 80 DEG C is set to A, when the adhesive power of binder layer when 80 DEG C is set to B, B≤0.9 (N) is set to by using, and the tape for processing wafer of 6.0≤(A/B)≤7.0, stripping between binder layer and bond layer becomes easy, the pickup success ratio of the semi-conductor chip in pickup process improves, and then find, the low thin semi-conductor chip of intensity also can pick up without damaged, thus complete the present invention.
Namely, first aspect present invention provides a kind of tape for processing wafer, it is formed with base material film, binder layer and bond layer successively, it is characterized in that, when the adhesive power of described bond layer when 80 DEG C being set to A, the adhesive power of described binder layer when 80 DEG C being set to B, B≤0.9 (N), and 6.0≤(A/B)≤7.0.
The tape for processing wafer of the application of the invention, the stripping between binder layer and bond layer becomes easy, in pickup process, can easily be picked up by the binder layer of semi-conductor chip from tape for processing wafer.Therefore, compared with at present, the pickup success ratio of semi-conductor chip can be improved.In addition, due to also semi-conductor chip can be picked up when not increasing jack-up power and the jack-up height of pin when thin semi-conductor chip, therefore, the low semi-conductor chip of intensity can not be made damaged and pick up.
Accompanying drawing explanation
Fig. 1 is the sectional view of the tape for processing wafer representing embodiment of the present invention;
Fig. 2 is the figure being fitted with semiconductor wafer on tape for processing wafer;
Fig. 3 is the figure for illustration of cutting action;
Fig. 4 is the figure for illustration of expansion operation;
Fig. 5 is the figure for illustration of pickup process;
Nomenclature
1: semiconductor wafer
2: semi-conductor chip
10: tape for processing wafer
12a: base material film
12b: binder layer
12: bonding film
13: bond layer
Embodiment
Below, with reference to the accompanying drawings embodiments of the present invention are described in detail.
Fig. 1 is the sectional view of the tape for processing wafer 10 representing an embodiment.This tape for processing wafer 10 has: the bonding film 12 be made up of base material film 12a and the binder layer 12b formed thereon of film like, the bond layer 13 be laminated on this bonding film 12.Like this, on tape for processing wafer 10, be formed with base material film 12a, binder layer 12b, bond layer 13 in order.
In addition, binder layer 12b can be made up of layer of adhesive layer, also can be made up of the binder layer being laminated with two-layer above binder layer.In addition, in FIG, in order to protect bond layer 13, the state being provided with release liner 11 on tape for processing wafer 10 is shown.
Bonding film 12 and bond layer 13 can cut into regulation shape (precut) in advance according to use operation or device.Tape for processing wafer 10 of the present invention comprises the form of cutting by every a slice of semiconductor wafer and the form be wound on by the rectangular sheet material of the form being formed with multiple every a slice cutting by semiconductor wafer like this on roller.
Below, each integrant of the tape for processing wafer 10 of present embodiment is described in detail.
(bond layer)
For bond layer 13, bonding semiconductor wafer 1 grade and after cutting, when picking up semi-conductor chip 2, peeling off from bonding film 12, being attached on semi-conductor chip 2, be used as caking agent when being fixed on substrate or lead frame by semi-conductor chip 2.Therefore, for bond layer 13, in pickup process, having can from the separability that bonding film 12 is peeled off under the state on the semi-conductor chip 2 remaining adhered to singualtion, and, in chip join operation, in order to semi-conductor chip 2 is bonded and fixed to substrate or lead frame, there is sufficient bonding reliability.
Bond layer 13, for caking agent being carried out membranization in advance and the bond layer obtained, can use such as known polyimide resin, polyamide resin, polyetherimide resin, polyamide-imide resin, vibrin, polyesterimide resin, phenoxy resin, polysulfone resin, polyethersulfone resin, polyphenylene sulfide, polyether ketone resin, chlorinated polypropylene, acrylic resin, urethane resin, epoxy resin, polyacrylamide resin, melmac etc. or its mixture of caking agent.In addition, in order to strengthen the bonding force to chip and lead frame, it is desirable to silane coupling agent or titanium coupling agent to make an addition to above-mentioned materials and composition thereof as additive.
The thickness of bond layer 13 is not particularly limited, and is usually preferably about 5 ~ 100 μm.In addition, bond layer 13 can be layered on whole of the binder layer 12b of bonding film 12, also the bond layer of the shape (precut) cutting into the semiconductor wafer 1 corresponding to laminating in advance can be layered in a part of binder layer 12b.When being laminated with the bond layer 13 cut into corresponding to the shape of semiconductor wafer 1, as shown in Figure 2, in the part being fitted with semiconductor wafer 1, there is bond layer 13, there is no bond layer 13 and the binder layer 12b of only bonding film 12 in the part being fitted with incisory toroidal frame 20.Generally speaking, bond layer 13 is difficult to peel off from clung body, therefore, by using the bond layer 13 of precut, following effect can be obtained: toroidal frame 20 can be made to fit on bonding film 12, and on toroidal frame, not easily produce residual slurry when sheet material is after a procedure peeled off.
(bonding film)
For bonding film 12, when cutting semiconductor chip 1, have and do not make semiconductor wafer 1 peel off so sufficient adhesive power, after dicing, when picking up semi-conductor chip 2, having and easily can peel off so low bounding force from bond layer 13.In the present embodiment, as shown in Figure 1, bonding film 12 is used in the bonding film that base material film 12a is provided with binder layer 12b.
As the base material film 12a of bonding film 12, as long as existing known base material film, just can use without particular limitation, but as aftermentioned, due in the present embodiment, as binder layer 12b, use the material of the radiation-curable in the material of energy curable, therefore, use has the radioparent base material film of radioactive rays.
Such as, as the material of base material film 12a, can enumerate: the homopolymer of the alpha-olefin such as polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, ionomer or multipolymer or their mixture; Urethane, styrene-ethylene-butadiene multipolymer or thermoplastic elastomer and their mixture such as amylene analog copolymer, polymeric amide-polyol copolymer.In addition, base material film 12a can for the base material film of material mixing of more than two kinds that will be selected from these, also can for they being carried out single or multiple lift and the base material film that obtains.The thickness of base material film 12a is not particularly limited, and can suitably set, preferably 50 ~ 200 μm.
In the present embodiment, by to radioactive rays such as bonding film 12 irradiation ultraviolet radiations, binder layer 12b is solidified, easily from release adhesive oxidant layer 12b bond layer 13, therefore, for the resin at binder layer 12b, the known chlorinated polypropylene used in preferred adhesive, acrylic resin, vibrin, urethane resin, epoxy resin, addition reaction-type organopolysiloxane system resin, Si acrylate resin, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, polyisoprene or the various elastomericss etc. such as styrene-butadiene copolymer or its hydrogenation thing, or in its mixture suitable Combined with Radiotherapy ray polymerization compound and prepare tackiness agent.In addition, various tensio-active agent or surface smoothing agent can also be added.The thickness of binder layer 12b is not particularly limited, and can suitably set, and is preferably 5 ~ 30 μm.
This radioactive rays polymerizable compound can use such as can have polymkeric substance or the oligopolymer in the low-molecular weight compound of more than at least 2 optical polymerism carbon-to-carbon double bonds, substituting group with optical polymerism carbon-to-carbon double bond group in the molecule of three-dimensional nettedization by rayed.Specifically, Viscoat 295, pentaerythritol triacrylate, tetramethylol methane tetraacrylate, Dipentaerythritol monohydroxypentaacrylate, dipentaerythritol acrylate, 1 can be used, the multipolymer etc. of 4-butylene glycol diacrylate, 1,6 hexanediol diacrylate, polyethyleneglycol diacrylate, oligomer ester acrylate etc., Si acrylate etc., vinylformic acid or various esters of acrylic acid.
In addition, except acrylic ester compound as above, ammonia ester acrylate quasi-oligomer can also be used.Ammonia ester acrylate quasi-oligomer is the acrylate or methacrylic ester (the such as vinylformic acid 2-hydroxyl ethyl ester that make to have hydroxyl, HEMA, vinylformic acid 2-hydroxypropyl acrylate, methacrylic acid 2-hydroxypropyl acrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate-styrene polymer etc.) react obtain with terminal isocyanate urethane prepolymer, described terminal isocyanate urethane prepolymer makes the polyol compound such as polyester type or polyether-type and polyhydric isocyanate compound (such as 2, 4-tolylene diisocyanate, 2, 6-tolylene diisocyanate, 1, 3-xylylene diisocyanate, 1, 4-xylylene diisocyanate, ditan 4, 4-vulcabond etc.) reaction obtain.It should be noted that, in binder layer 12b, also can mix two or more resin be selected from above-mentioned resin.
It should be noted that, in the resin of binder layer 12b, except radioactive rays polymerizable compound binder layer 12b being solidified except irradiating radioactive rays to bonding film 12, also can suitably coordinate acrylic adhesives, Photoepolymerizationinitiater initiater, solidifying agent etc. and prepare binder layer 12b.
When using Photoepolymerizationinitiater initiater, such as benzoin iso-propylether, benzoin isobutyl ether, benzophenone, tetramethyldiaminobenzophenone, clopenthixal ketone, dodecyl thioxanthone, dimethyl thioxanthone, diethyl thioxanthone, benzyl dimethyl ketal, Alpha-hydroxy cyclohexyl-phenyl ketone, 2-hyd roxymethyl phenyl propane etc. can be used.
The tape for processing wafer 10 of present embodiment, has feature having in following formation.
When the adhesive power of the bond layer 13 when 80 DEG C being set to A, the adhesive power of binder layer 12b when 80 DEG C being set to B, meet B≤0.9 (N), and 6.0≤(A/B)≤7.0.
In order to reduce adhesive power during binder layer 12b and bond layer 13 80 DEG C, more than 50 DEG C can be used and the lower boiling solvent of less than 100 DEG C degree.As boiling point more than 50 DEG C and the solvent of less than 100 DEG C, preferred vinyl acetic monomer and methyl ethyl ketone (MEK), can use with the form of monomer or mixture.When use more than 100 DEG C and the solvent of the high boiling point of less than 200 degree, residual molten concentration can be set as less than 1%.And then, in order to reduce adhesive power during 80 DEG C of binder layer 12b, the amount of light trigger can be made to increase, relative to polymkeric substance 100 mass parts, be preferably set to 1 ~ 20 mass parts, be more preferably set as 2 ~ 15 mass parts.
In addition, the gamma transition transition temperature (Tg) improving the polymkeric substance forming binder layer is also effective.Second-order transition temperature (Tg) is preferably-40 ~-70 DEG C, is more preferably-50 ~-60 DEG C.And then, in order to reduce adhesive power during 80 DEG C of binder layer 12b, the content of solidifying agent can be increased, be preferably 0.01 ~ 0.15 mass parts relative to polymers copolymers, be more preferably and make the content of solidifying agent be set as 0.01 ~ 0.02 mass parts relative to polymers copolymers.
In addition, in order to reduce adhesive power during 80 DEG C of bond layer 13, can filler content be improved, being preferably 5 ~ 100 mass parts relative to polymkeric substance 100 mass parts, being more preferably 10 ~ 50 mass parts.And then in order to reduce adhesive power during 80 DEG C of bond layer 13, the content of solidifying agent can be made to increase, and relative to epoxy 100 mass parts, solidifying agent can be 50 ~ 200 mass parts, is more preferably 70 ~ 150 mass parts.In addition, the epoxy equivalent (weight) forming the epoxy of bond layer is preferably 100g/eq ~ 400g/eq, is more preferably 200 ~ 300g/eq.In order to improve adhesive power during binder layer 12b and bond layer 13 80 DEG C, above-mentioned operation can be reversed.
(using method of tape for processing wafer)
In the manufacturing process of semiconductor device, tape for processing wafer 10 uses as follows.In fig. 2, the situation being fitted with semiconductor wafer 1 and toroidal frame 20 on tape for processing wafer 10 is represented.First, as shown in Figure 2, the binder layer 12b of bonding film 12 is pasted onto on toroidal frame 20, semiconductor wafer 1 and bond layer 13 are fitted.Its stickup order does not limit, and after making semiconductor wafer 1 and bond layer 13 fit, then can be pasted onto on toroidal frame 20 by the binder layer 12b of bonding film 12.In addition, also can carry out bonding film 12 to the stickup on toroidal frame 20 and semiconductor wafer 1 to the laminating on bond layer 13 simultaneously.
Next, implement the cutting action (Fig. 3) of semiconductor wafer 1, then, implement bonding film 12 irradiation energy ray, such as ultraviolet operation.Specifically, in order to utilize cutters 21 cutting semiconductor chip 1 and bond layer 13, utilize absorptive table 22 from the following side adsorbent support tape for processing wafer 10 of bonding film 12.Then, cutters 21 are utilized semiconductor wafer 1 and bond layer 13 to be cut into 2 elemental semiconductor chips and carries out singualtion, then, from the lower face side irradiation energy ray of bonding film 12.Irradiated by this energy-ray, binder layer 12b is solidified, its adhesive power is reduced.It should be noted that, the irradiation of energy-ray can be replaced, utilize the outside stimuluss such as heating and the adhesive power of the binder layer 12b of bonding film 12 is reduced.Binder layer 12b by two-layer above binder layer stacked and form when, the one deck in each binder layer or the solidification of all layers can be made by energy exposure, the adhesive power of the one deck in each binder layer or all layers is reduced.
Thereafter, as shown in Figure 4, the expansion operation stretched by the circumferential direction of the bonding film 12 maintaining cut semi-conductor chip 2 and bond layer 13 annularly frame 20 is implemented.Specifically, relatively maintain the bonding film 12 of the state of multiple semi-conductor chips 2 and bond layer 13 cut into, make the ejector member 30 of hollow cylindrical increase from the lower face side of bonding film 12, by bonding film 12 annularly frame 20 circumferential direction stretch.By expansion operation, widen the interval between semi-conductor chip 2, improve the identity of semi-conductor chip 2 utilizing ccd video camera etc. to carry out, meanwhile, what can prevent between the semi-conductor chip that produces due to the contact each other of adjacent semi-conductor chip 2 when picking up is bonding again.
After implementing expansion operation, as shown in Figure 5, keeping, under the state extended by bonding film 12, implementing the pickup process of pickup semi-conductor chip 2.Specifically, utilize pin 31 to be ejected by semi-conductor chip 2 from the lower face side of adhesive sheet 12, meanwhile, adsorb semi-conductor chip 2 from the upper surface side suction jig 32 of bonding film 12, thus, semi-conductor chip 2 and the bond layer 13 of singualtion are together picked up.
Next, after implementing pickup process, implement chip join operation.Specifically, utilize the bond layer 13 together picked up with semi-conductor chip 2 in pickup process, by semi-conductor chip 2 and lead frame or to pack substrate etc. bonding.
(embodiment)
Then, embodiments of the invention are described, but the present invention is not limited to these embodiments.First, after modulating the binder layer composition 1A ~ 1G shown in base material film 12a and following table 1, applying adhesive layer composition 1A ~ 1F on base material film 12a, to make the dried thickness of binder layer composition 1A ~ 1G be 10 μm, at 110 DEG C, drying 3 minutes, is made bonding film 12.Then, bond layer composition 2A ~ 2H shown in following table 2 is modulated, adhesive-applying layer composition 2A ~ 2H on 11 at the bottom of the peeling liner be made up of the polyethylene terephthalate of thickness 25 μm bond layer composition 2A ~ 2H being carried out to demoulding process, it is 40 μm to make dried thickness, at 110 DEG C, drying 3 minutes, release liner 11 is made bond layer 13.Then, after being shape as shown in Figure 2 by bonding film 12 and bond layer 13 severing, at the binder layer 12b side of bonding film 12 laminating bond layer 13, embodiment 1 ~ 3 as described in Table 3 and comparative example 1 ~ 9 is as described in Table 4 made.
(base material film 12a)
As membranaceous base material film 12a, use the elastomeric polypropylene that with the addition of thickness 100 μm.
(modulation of binder layer composition)
As binder layer composition 1A ~ 1G, by the cooperation of each composition as shown in table 1 below, modulating adhesive layer composition.
[table 1]
| Binder layer composition | 1A | 1B | 1C | 1D | 1E | 1F | 1G |
| Polymers copolymers (1) | 33 | 33 | 33 | 33 | 33 | ||
| Polymers copolymers (2) | 33 | 33 | |||||
| Solidifying agent | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.2 | 0.5 |
| Light trigger | 3 | 3 | 3 | 1 | 4 | 3 | 3 |
| Solvent (1) | 80 | 80 | |||||
| Solvent (2) | 80 | 80 | 80 | 80 | 80 |
< binder layer composition 1A>
Binder composition 1A is as shown in table 1, is the composition adding polymers copolymers (1) 33 mass parts, solidifying agent (isocyanic ester) 0.5 mass parts, Photoepolymerizationinitiater initiater (1-hydroxy-cyclohexyl-phenyl-one) 3 mass parts, solvent (1) 80 mass parts carrying out mix.It should be noted that, the multipolymer that polymers copolymers (1) is the 2-EHA and vinylformic acid 2-hydroxyalkyl acrylate class with the functional group of radiation-curable carbon-to-carbon double bond bonding, second-order transition temperature (Tg) is-53 DEG C.In addition, solvent (1) is toluene.
< binder layer composition 1B>
Binder composition 1B is as shown in table 1, for adding polymers copolymers (1) 33 mass parts, solidifying agent (isocyanate compound) 0.5 mass parts, Photoepolymerizationinitiater initiater (1-hydroxy-cyclohexyl-phenyl-one) 3 mass parts, solvent (2) 80 mass parts the composition mixed.It should be noted that, solvent (2) is vinyl acetic monomer.
< binder layer composition 1C>
Binder composition 1C is as shown in table 1, for adding polymers copolymers (2) 33 mass parts, solidifying agent (isocyanate compound) 0.5 mass parts, Photoepolymerizationinitiater initiater (1-hydroxy-cyclohexyl-phenyl-one) 3 mass parts, solvent (2) 80 mass parts the composition mixed.It should be noted that, the multipolymer that polymers copolymers (2) is the 2-EHA and vinylformic acid 2-hydroxyalkyl acrylate class with the functional group of radiation-curable carbon-to-carbon double bond bonding, second-order transition temperature (Tg) is-72 DEG C.
< binder layer composition 1D>
Binder composition 1D is as shown in table 1, for adding polymers copolymers (1) 33 mass parts, solidifying agent (isocyanate compound) 0.5 mass parts, Photoepolymerizationinitiater initiater (1-hydroxy-cyclohexyl-phenyl-one) 1 mass parts, solvent (2) 80 mass parts the composition mixed.
< binder layer composition 1E>
Binder composition 1E is as shown in table 1, for adding polymers copolymers (1) 33 mass parts, solidifying agent (isocyanate compound) 0.5 mass parts, Photoepolymerizationinitiater initiater (1-hydroxy-cyclohexyl-phenyl-one) 4 mass parts, solvent (2) 80 mass parts the composition mixed.
< binder layer composition 1F>
Binder composition 1F is as shown in table 1, for adding polymers copolymers (1) 33 mass parts, solidifying agent (isocyanate compound) 0.2 mass parts, Photoepolymerizationinitiater initiater (1-hydroxy-cyclohexyl-phenyl-one) 3 mass parts, solvent (2) 80 mass parts the composition mixed.
< binder layer composition 1G>
1G is as shown in table 1 for binder layer composition, for adding polymers copolymers (2) 33 mass parts, solidifying agent (isocyanic ester) 0.5 mass parts, Photoepolymerizationinitiater initiater (1-hydroxy-cyclohexyl-phenyl-one) 3 mass parts, solvent (1) 80 mass parts the composition mixed.
Above-mentioned binder layer composition 1A ~ 1G is 10 μm according to dry film thickness on base material film 12a apply, at 110 DEG C, drying 3 minutes, makes bonding film 12.
As binder layer composition 2A ~ 2H, by the cooperation of each composition shown in following table 2, modulation bond layer composition.
[table 2]
| Bond layer composition | 2A | 2B | 2C | 2D | 2E | 2F | 2G | 2H |
| Acrylic resin (1) | 16 | 16 | 16 | 19 | 16 | |||
| Acrylic resin (2) | 16 | 16 | 19 | |||||
| Epoxy resin | 4 | 4 | 4 | 4 | 1 | 4 | 4 | 1 |
| Filler | 2 | 2 | 2 | 1 | 2 | 3 | 2 | 2 |
| Solidifying agent | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| Solidifying agent promotor | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 |
| Solvent (1) | 80 | 80 | 80 | |||||
| Solvent (2) | 80 | 80 | 80 | 80 | 80 |
< bond layer composition 2A>
Epoxy resin 4 mass parts, silane coupling agent (γ mercaptopropyitrimethoxy silane), filler 2 mass parts are added solvent (2) 80 mass parts and be uniformly mixed, and then uses mixing 90 minutes of ball mill.Thereafter, acrylic resin (1) 16 mass parts, solidifying agent 4 mass parts, curing catalyst 0.2 mass parts are uniformly mixed, and carry out vacuum outgas, obtains bond layer composition 2A.Epoxy resin is biphenyl type epoxy resin (epoxy equivalent (weight) 265, molecular weight 1200, softening temperature 63 DEG C).Filler is the silica filler of median size 16nm.It should be noted that, the mixture that solvent (2) is methyl ethyl ketone (MEK) and vinyl acetic monomer.The weight-average molecular weight (Mw) of acrylic resin (1) is 800,000, and second-order transition temperature (Tg) is 17 DEG C.As solidifying agent, use commercially available DICY15 (JER (strain)), as curing catalyst, use commercially available Curesol 2PZ (four countries change into Co., Ltd.).
< bond layer composition 2B>
2B is as shown in table 2 for bond layer composition, use acrylic resin (1) 16 mass parts, epoxy resin 4 mass parts, filler 2 mass parts, solidifying agent 4 mass parts, curing catalyst 0.2 mass parts, solvent (1) 80 mass parts, obtain in the same manner as bond layer composition 2A.Solvent (1) is the mixture of toluene and pimelinketone.
< bond layer composition 2C>
2C is as shown in table 2 for bond layer composition, use acrylic resin (1) 16 mass parts, epoxy resin 4 mass parts, filler 2 mass parts, solidifying agent 4 mass parts, curing catalyst 0.2 mass parts, solvent (2) 80 mass parts, obtain in the same manner as bond layer composition 2A.The weight-average molecular weight (Mw) of acrylic resin (2) is 850,000, and second-order transition temperature (Tg) is-15 DEG C.
< bond layer composition 2D>
2D is as shown in table 2 for bond layer composition, use acrylic resin (1) 16 mass parts, epoxy resin 4 mass parts, filler 1 mass parts, solidifying agent 4 mass parts, curing catalyst 0.2 mass parts, solvent (2) 80 mass parts, obtain in the same manner as bond layer composition 2A.
< bond layer composition 2E>
2E is as shown in table 2 for bond layer composition, use acrylic resin (1) 19 mass parts, epoxy resin 1 mass parts, filler 2 mass parts, solidifying agent 4 mass parts, curing catalyst 0.2 mass parts, solvent (2) 80 mass parts, obtain in the same manner as bond layer composition 2A.
< bond layer composition 2F>
2F is as shown in table 2 for bond layer composition, use acrylic resin (1) 16 mass parts, epoxy resin 4 mass parts, filler 3 mass parts, solidifying agent 4 mass parts, curing catalyst 0.2 mass parts, solvent (2) 80 mass parts, obtain in the same manner as bond layer composition 2A.
< bond layer composition 2G>
2G is as shown in table 2 for bond layer composition, use acrylic resin (2) 16 mass parts, epoxy resin 4 mass parts, filler 2 mass parts, solidifying agent 4 mass parts, curing catalyst 0.2 mass parts, solvent (1) 80 mass parts, obtain in the same manner as bond layer composition 2A.
< bond layer composition 2H>
2H is as shown in table 2 for bond layer composition, use acrylic resin (2) 19 mass parts, epoxy resin 1 mass parts, filler 2 mass parts, solidifying agent 4 mass parts, curing catalyst 0.2 mass parts, solvent (1) 80 mass parts, obtain in the same manner as bond layer composition 2A.
Above-mentioned bond layer composition 2A ~ 2H is coated on polyethylene terephthalate (PET) film of the carrying out of thickness 25 μm demoulding process, heat drying, forms the film that thickness is the B-stage state of 40 μm, make adhesive film.
The bonding film 12 made and adhesive film are cut into respectively the circle of diameter 370mm, 320mm, and the binder layer 12b of bonding film 12 and the bond layer 13 of adhesive film are fitted.Finally, the PET film of adhesive film is peeled off from bond layer 13, obtain embodiment 1 ~ 3 tape for processing wafer 10 shown in table 3, and the tape for processing wafer of the comparative example 1 ~ 9 shown in following table 4.
[table 3]
| Embodiment 1 | Embodiment 2 | Embodiment 3 | |
| Binder layer composition | 1B | 1E | 1F |
| Bond layer composition | 2A | 2A | 2F |
| Adhesive power A (N) during 80 DEG C of bond layer | 3.651 | 3.651 | 3.584 |
| Adhesive power B (N) during 80 DEG C of binder layer | 0.531 | 0.566 | 0.584 |
| Adhesive power ratio (A/B) when 80 DEG C | 6.9 | 6.5 | 6.1 |
| Pickup success ratio (%) | 100 | 100 | 100 |
[table 4]
| Comparative example 1 | Comparative example 2 | Comparative example 3 | Comparative example 4 | Comparative example 5 | Comparative example 6 | Comparative example 7 | Comparative example 8 | Comparative example 9 | |
| Binder layer composition | 1A | 1B | 1C | 1B | 1B | 1B | 1D | 1G | 1G |
| Bond layer composition | 2A | 2B | 2A | 2C | 2D | 2E | 2A | 2G | 2H |
| Adhesive power A (N) during 80 DEG C of bond layer | 3.651 | 3.967 | 3.651 | 3.896 | 3.772 | 4.093 | 3.651 | 5.624 | 6.295 |
| Adhesive power B (N) during 80 DEG C of binder layer | 0.864 | 0.531 | 0.618 | 0.531 | 0.531 | 0.531 | 0.851 | 0.908 | 0.908 |
| Adhesive power ratio (A/B) when 80 DEG C | 4.2 | 7.5 | 5.9 | 7.3 | 7.1 | 7.7 | 4.3 | 6.2 | 6.9 |
| Pickup success ratio (%) | 32 | 28 | 81 | 22 | 76 | 9 | 28 | 0 | 0 |
Table 3 represents the binder layer composition of tape for processing wafer 10 and the combination of bond layer composition that form embodiment 1 ~ 3.In addition, the adhesive power B (N) during the adhesive power A (N) when showing 80 DEG C of the bond layer 13 of each embodiment 1 ~ 3, binder layer 12b 80 DEG C, 80 DEG C time bond layer 13 and the adhesive power ratio (A/B) of binder layer 12b, pickup success ratio (%).In addition, the jack-up of the pin of pickup is highly 450 μm.
Table 4 represents the binder layer composition of tape for processing wafer and the combination of bond layer composition that form comparative example 1 ~ 9.In addition, the adhesive power B (N) during the adhesive power A (N) when indicating 80 DEG C of the bond layer 13 of each comparative example 1 ~ 7, binder layer 12b 80 DEG C, 80 DEG C time bond layer 13 and the adhesive power ratio (A/B) of binder layer 12b, pickup success ratio (%).In addition, the jack-up of the pin of pickup is highly 450 μm.
The mensuration > of < adhesive power
The self adhesive tape 12 of each tape for processing wafer 10 of embodiment 1 ~ 3 and each tape for processing wafer of comparative example 1 ~ 9 is maintained 80 DEG C, simultaneously, with JIS Z 0237 for benchmark, the adhesive power of RHESCA glue viscous force determination test machine to binder layer 12b is used to measure.The adhesive film of each tape for processing wafer 10 of embodiment 1 ~ 3 and each tape for processing wafer of comparative example 1 ~ 9 is maintained 80 DEG C, simultaneously, with JIS Z 0237 for benchmark, the adhesive power of RHESCA glue viscous force determination test machine to bond layer 13 is used to measure.
< picks up the mensuration > of success ratio
Under 70 DEG C of conditions, with 10 seconds, the heating of the silicon wafer (semiconductor wafer) 1 of thickness 100 μm is fitted on each tape for processing wafer 10 of embodiment 1 ~ 3 and each tape for processing wafer of comparative example 1 ~ 9, then, the semi-conductor chip 2 of 10mm × 10mm is cut into.Thereafter air-cooled type high pressure mercury vapour lamp (80W/cm, irradiation distance 10cm) is passed through to binder layer 12b with 200J/cm
2irradiation ultraviolet radiation.Thereafter, to the semi-conductor chip 2 of 50 of central part being positioned at silicon wafer (semiconductor wafer) 1, picked up by chip bonding device (NEC machinery system, trade(brand)name CPS-100FM), obtain pickup success ratio, its result is evaluated.It should be noted that, using the semi-conductor chip 2 picked up maintaining the chip of the bond layer 13 peeled off from binder layer 12b as the successful chip of pickup, calculating pickup success ratio.
In embodiment 1, adhesive power during 80 DEG C of binder layer 12b (below, be called adhesive power B) be 0.531 (N) of above-mentioned 0.9 (N) scope below of the adhesive power B of regulation, and the adhesive power ratio (A/B) of adhesive power (adhesive power B) during with binder layer 12b 80 DEG C of adhesive power (hereinafter referred to as adhesive power A) when 80 of bond layer 13 DEG C is for specify above-mentioned more than 6.0 of adhesive power ratio (A/B) and 6.9 in the scope of less than 7.0, therefore, picking up success ratio is 100%.
In embodiment 2, adhesive power B is 0.566 (N) of above-mentioned 0.9 (N) scope below of regulation adhesive power B, and adhesive power ratio (A/B) be regulation adhesive power ratio (A/B) above-mentioned more than 6.0 and 6.5 in the scope of less than 7.0, therefore, picking up success ratio is 100%.
In embodiment 3, adhesive power B is 0.584 (N) of above-mentioned 0.9 (N) scope below of regulation adhesive power B, and adhesive power ratio (A/B) be regulation adhesive power ratio (A/B) above-mentioned more than 6.0 and 6.1 in the scope of less than 7.0, therefore, picking up success ratio is 100%.
In comparative example 1, adhesive power B is 0.864 (N) of above-mentioned 0.9 (N) scope below of regulation adhesive power B, but adhesive power ratio (A/B) be than regulation adhesive power ratio (A/B) above-mentioned more than 6.0 and the lower value of the scope of less than 7.0 little 4.2, therefore, pick up success ratio and be reduced to 32%.
In comparative example 2, adhesive power B is 0.531 (N) of above-mentioned 0.9 (N) scope below of regulation adhesive power B, but adhesive power ratio (A/B) be than regulation adhesive power ratio (A/B) above-mentioned more than 6.0 and the higher limit of the scope of less than 7.0 large 7.5, therefore, pick up success ratio and be reduced to 28%.
In comparative example 3, adhesive power B is 0.618 (N) of above-mentioned 0.9 (N) scope below of regulation adhesive power B, but adhesive power ratio (A/B) be than regulation adhesive power ratio (A/B) above-mentioned more than 6.0 and the lower value of the scope of less than 7.0 little 5.9, therefore, pick up success ratio and be reduced to 81%.
In comparative example 4, adhesive power B is 0.531 (N) of above-mentioned 0.9 (N) scope below of regulation adhesive power B, but adhesive power ratio (A/B) be than regulation adhesive power ratio (A/B) above-mentioned more than 6.0 and the higher limit of the scope of less than 7.0 large 7.3, therefore, pick up success ratio and be reduced to 22%.
In comparative example 5, adhesive power B is 0.531 (N) of above-mentioned 0.9 (N) scope below of regulation adhesive power B, but adhesive power ratio (A/B) be than regulation adhesive power ratio (A/B) above-mentioned more than 6.0 and the higher limit of the scope of less than 7.0 large 7.1, therefore, pick up success ratio and be reduced to 76%.
In comparative example 6, adhesive power B is 0.531 (N) of above-mentioned 0.9 (N) scope below of regulation adhesive power B, but adhesive power ratio (A/B) be than regulation adhesive power ratio (A/B) above-mentioned more than 6.0 and the higher limit of the scope of less than 7.0 large 7.7, therefore, pick up success ratio and be reduced to 9%.
In comparative example 7, adhesive power B is 0.851 (N) of above-mentioned 0.9 (N) scope below of regulation adhesive power B, but adhesive power ratio (A/B) be than regulation adhesive power ratio (A/B) above-mentioned more than 6.0 and the lower value of the scope of less than 7.0 little 4.3, therefore, pick up success ratio and be reduced to 28%.
In comparative example 8, adhesive power ratio (A/B) be regulation adhesive power ratio (A/B) above-mentioned more than 6.0 and 6.2 in the scope of less than 7.0, but adhesive power B is 0.908 (N) larger than above-mentioned 0.9 (N) range higher limit below of regulation adhesive power B, therefore, pick up success ratio and be reduced to 0%.
In comparative example 9, adhesive power ratio (A/B) be regulation adhesive power ratio (A/B) above-mentioned more than 6.0 and 6.9 in the scope of less than 7.0, but adhesive power B is 0.908 (N) larger than above-mentioned 0.9 (N) range higher limit below of the adhesive power B of regulation, therefore, pick up success ratio and be reduced to 0%.
In the tape for processing wafer 10 of present embodiment, when the adhesive power of the bond layer 13 when 80 DEG C being set to A, the adhesive power of binder layer 12b when 80 DEG C being set to B, meet B≤0.9 (N), and 6.0≤(A/B)≤7.0.
Adhesive power B during 80 DEG C of binder layer 12b be 0.9 (N) below, and the ratio (A/B) of the adhesive power of adhesive power B during with binder layer 12b 80 DEG C of adhesive power A when 80 of bond layer 13 DEG C is more than 6.0 and in the scope of less than 7.0, the stripping between binder layer 12b and bond layer 13 becomes easy.
As mentioned above, in pickup process, easily the semi-conductor chip 2 being attached with the state of bond layer 13 can be picked up from the binder layer 12b of tape for processing wafer 10.Therefore, the pickup success ratio of the semi-conductor chip 2 of the state being attached with bond layer 13 can be made to improve than ever.In addition, even if when thin semi-conductor chip 2, because the stripping between binder layer 12b and bond layer 13 is easy, so the jack-up power of pin and jack-up height also can not be increased and pick up semi-conductor chip 2, therefore, can not damaged at the semi-conductor chip 2 that intensity is low pick up.
Claims (2)
1. a tape for processing wafer, is characterized in that, it is the tape for processing wafer being formed with base material film, binder layer and bond layer successively,
It is that the polymkeric substance of-40 ~-70 DEG C and boiling point are more than 50 DEG C and the solvent of less than 100 DEG C that described binder layer contains second-order transition temperature,
When the adhesive power of described bond layer when 80 DEG C being set to A, the adhesive power of described binder layer when 80 DEG C being set to B, B≤0.9N, and 6.0≤A/B≤7.0.
2. a tape for processing wafer, is characterized in that, it is the tape for processing wafer being formed with base material film, binder layer and bond layer successively,
It is that the polymkeric substance of-40 ~-70 DEG C and boiling point are more than 100 DEG C and the solvent of less than 200 DEG C that described binder layer contains second-order transition temperature, and the residual molten concentration of described solvent is less than 1%,
When the adhesive power of described bond layer when 80 DEG C being set to A, the adhesive power of described binder layer when 80 DEG C being set to B, B≤0.9N, and 6.0≤A/B≤7.0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010179460.7A CN102250555B (en) | 2010-05-17 | 2010-05-17 | Belt for wafer processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010179460.7A CN102250555B (en) | 2010-05-17 | 2010-05-17 | Belt for wafer processing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102250555A CN102250555A (en) | 2011-11-23 |
| CN102250555B true CN102250555B (en) | 2015-04-01 |
Family
ID=44978135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010179460.7A Active CN102250555B (en) | 2010-05-17 | 2010-05-17 | Belt for wafer processing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102250555B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114364761B (en) * | 2020-07-30 | 2024-02-02 | 古河电气工业株式会社 | Adhesive tape for semiconductor processing |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101029235B1 (en) * | 2001-08-10 | 2011-04-18 | 닛토덴코 가부시키가이샤 | Dicing adhesive sheet and dicing method |
| JP2004273895A (en) * | 2003-03-11 | 2004-09-30 | Disco Abrasive Syst Ltd | Dividing method of semiconductor wafer |
| CN101471240B (en) * | 2003-06-06 | 2011-07-20 | 日立化成工业株式会社 | Adhesive sheet, dicing tape intergrated type adhesive sheet, and semiconductor device producing method |
| JP4562118B2 (en) * | 2003-12-19 | 2010-10-13 | 日東電工株式会社 | Manufacturing method of semiconductor device |
| JP4275522B2 (en) * | 2003-12-26 | 2009-06-10 | 日東電工株式会社 | Dicing die bond film |
| JP4443962B2 (en) * | 2004-03-17 | 2010-03-31 | 日東電工株式会社 | Dicing die bond film |
| JP4776189B2 (en) * | 2004-08-03 | 2011-09-21 | 古河電気工業株式会社 | Wafer processing tape |
| JP4776188B2 (en) * | 2004-08-03 | 2011-09-21 | 古河電気工業株式会社 | Semiconductor device manufacturing method and wafer processing tape |
| JP2006245352A (en) * | 2005-03-04 | 2006-09-14 | Nitta Ind Corp | Wafer dicing tape, and semiconductor-chip picking-up method |
| CN101506948B (en) * | 2006-09-12 | 2012-12-12 | 日东电工株式会社 | Dicing/die bonding film |
| EP2192611B9 (en) * | 2007-09-14 | 2012-08-15 | Furukawa Electric Co., Ltd. | Wafer processing tape |
| EP2151860A2 (en) * | 2008-08-04 | 2010-02-10 | Nitto Denko Corporation | Dicing die-bonding film |
-
2010
- 2010-05-17 CN CN201010179460.7A patent/CN102250555B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN102250555A (en) | 2011-11-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1978571B (en) | Die bonding adhesive tape | |
| TWI414010B (en) | Crystalline crystal / sticky ribbon and semiconductor wafer manufacturing method | |
| JP7409029B2 (en) | Method for manufacturing semiconductor devices, integrated dicing/die bonding film, and method for manufacturing the same | |
| CN103725215A (en) | Fill roll for producing semiconductor device | |
| CN102337089B (en) | Wafer processing adhesive tape and method for processing semiconductor therewith | |
| CN102653661B (en) | Wafer processing tape | |
| JP2012084759A (en) | Method of manufacturing electronic component | |
| CN108727999A (en) | Cut die bonding film | |
| TWI623432B (en) | Resin film forming sheet | |
| JP2005277297A (en) | Manufacturing method of semiconductor device and dicing adhesive tape | |
| JP5184409B2 (en) | Wafer processing tape | |
| CN102220091A (en) | Adhesive tape for wafer processing | |
| CN102250555B (en) | Belt for wafer processing | |
| KR101119802B1 (en) | Tape for processing wafer | |
| TWI431090B (en) | Wafer processing tape | |
| TWI431092B (en) | Wafer processing tape | |
| JP5276063B2 (en) | Sheet for semiconductor wafer dicing and die bonding | |
| KR101246480B1 (en) | Tape for processing wafer | |
| CN102782813B (en) | Film for machining wafer and use film for machining wafer manufacture the method for semiconductor device | |
| JP6800062B2 (en) | Adhesive tape | |
| JP7153034B2 (en) | Long laminated sheet and its wound body | |
| JP6529650B2 (en) | Wafer processing tape | |
| WO2023281996A1 (en) | Adhesive tape | |
| JP5566749B2 (en) | Wafer processing tape | |
| JP2013125924A (en) | Wafer processing tape and manufacturing method of the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |