JP2012174785A - Dicing tape integrated adhesive sheet and semiconductor device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a dicing tape integrated adhesive sheet and a semiconductor device using the same, which can inhibit separation of a ring frame and scattering of a chip in a dicing process and achieve excellent pickup property in a pickup process.SOLUTION: A dicing tape integrated adhesive sheet 1 comprises a base material 10, a first adhesive layer 20 arranged on the base material, a second adhesive layer 30 arranged on the first adhesive layer and having an opening 30a exposing the first adhesive layer, and a die-bonding film 40 arranged so as to cover the opening. A semiconductor device uses the dicing tape integrated adhesive sheet.

Description

  The present invention relates to a dicing tape-integrated adhesive sheet and a semiconductor device using the same.

  Conventionally, silver paste has been mainly used for joining a semiconductor chip and a support member for mounting a semiconductor chip. However, with the recent miniaturization and high performance of semiconductor chips, the support members used are required to be small and fine. Furthermore, along with demands for miniaturization and higher density of portable devices, etc., semiconductor devices in which a plurality of semiconductor chips are stacked are being developed and mass-produced. The above silver paste is caused by protrusion or inclination of semiconductor chips. Due to the occurrence of defects during wire bonding, the difficulty in controlling the film thickness of the adhesive layer, and the generation of voids in the adhesive layer, it has become impossible to cope with the above requirements. Therefore, in recent years, a film-like adhesive (adhesive film) has been used.

The adhesive film is used in the following method (1) or (2). In particular, in recent years, the method (2) is mainly used for the purpose of simplifying a semiconductor device manufacturing process (see, for example, Patent Document 1).
(1) The adhesive film is cut into an arbitrary size and attached to a substrate with wiring or a semiconductor chip, and the semiconductor chip is thermocompression bonded.
(2) The adhesive film is attached to the entire silicon wafer and then separated into pieces with a rotary blade to obtain a semiconductor chip with an adhesive film, which is thermocompression bonded to the substrate with wiring and the semiconductor chip.

JP 2005-11839 A

  By the way, in the dicing process of cutting and separating the silicon wafer into a plurality of chips, an adhesive film in which the dicing sheet and the die bonding film are integrated is pasted on the entire silicon wafer, and the edge of the adhesive film is fixed with a ring frame, A process of completely cutting a silicon wafer and an adhesive film with a rotary blade has become common. Then, the cut and separated chips are picked up from the dicing sheet in the subsequent pick-up process.

  However, at the time of dicing, there is a tendency to increase the cutting water pressure in order to suppress contamination of the silicon wafer surface, and there is a problem that peeling occurs at the interface between the dicing sheet and the ring frame. At this time, when the adhesiveness between the die bonding film and the dicing sheet is insufficient, the outer periphery of the die bonding film is peeled off from the dicing sheet during dicing, and the chips attached to the die bonding film are scattered. There is also a problem that it ends up.

  On the other hand, the interface between the die bonding film and the dicing sheet is required to have a peelability that can be easily peeled off from the chip in the pickup step after the dicing step.

  Accordingly, the present invention provides a dicing tape-integrated adhesive sheet that can suppress peeling of the ring frame and chip scattering in the dicing process, and that can achieve good pickup properties in the pickup process, and a semiconductor device using the same. The purpose is to provide.

  The present invention includes a base material, a first adhesive layer disposed on the base material, a second adhesive layer disposed on the first adhesive layer and having an opening through which the first adhesive layer is exposed, A dicing tape-integrated adhesive sheet comprising a die bonding film disposed so as to cover the opening, the diameter of the opening being larger than the diameter of the silicon wafer disposed on the die bonding film, and an end of the die bonding film Part of the first adhesive layer overlaps with the second adhesive layer, and the adhesive force between the first adhesive layer and the die bonding film is smaller than the adhesive force between the second adhesive layer and the die bonding film. Provided is a dicing tape-integrated adhesive sheet in which the adhesive force between the adhesive layer and the second adhesive layer is greater than the adhesive force between the second adhesive layer and the ring frame disposed on the second adhesive layer. .

  With such a dicing tape-integrated adhesive sheet, it is possible to suppress peeling of the ring frame and chip scattering in the dicing process, and to achieve good pickup performance in the pickup process. That is, the diameter of the opening is larger than the diameter of the silicon wafer disposed on the die bonding film, and the end portion of the die bonding film partially overlaps the second adhesive layer. It can suppress that an outer peripheral part peels from a dicing sheet, and it can prevent that the chip | tip stuck on the die-bonding film scattered.

  Moreover, since the adhesive force between the first adhesive layer and the die bonding film is smaller than the adhesive force between the second adhesive layer and the die bonding film, the chip with the die bonding film separated can be easily picked up. In addition, even when a cutting water pressure is applied during dicing, the die bonding film can be prevented from peeling from the second adhesive layer.

  Furthermore, since the adhesive force between the first adhesive layer and the second adhesive layer is larger than the adhesive force between the second adhesive layer and the ring frame disposed on the second adhesive layer, dicing processing is performed. Even if cutting water pressure is sometimes applied, it is possible to suppress the peeling between the second adhesive layer and the ring frame, and when the second adhesive layer is peeled from the ring frame, the second adhesive layer is on the ring frame side. Can be suppressed.

  Moreover, it is preferable that the width | variety of the overlap part of a 2nd adhesion layer and a die-bonding film is 0.1-25 mm. Thereby, the adhesive force between the second adhesive layer and the die bonding film can be kept sufficiently suitable.

  The present invention also provides a semiconductor device manufactured using the dicing tape-integrated adhesive sheet.

  ADVANTAGE OF THE INVENTION According to this invention, while being able to suppress peeling of the ring frame and chip | tip scattering in a dicing process, the dicing tape integrated adhesive sheet which can achieve the favorable pick-up property in a pick-up process, and a semiconductor device using the same Can be provided.

It is a top view which shows typically the dicing tape integrated adhesive sheet which concerns on embodiment. It is a schematic cross section along the II-II line of Drawing 1 of the dicing tape integrated adhesive sheet concerning an embodiment. It is process sectional drawing which shows typically the manufacturing method of the semiconductor device which concerns on embodiment. It is process sectional drawing which shows typically the manufacturing method of the semiconductor device which concerns on embodiment. It is process sectional drawing which shows typically the manufacturing method of the semiconductor device which concerns on embodiment. It is process sectional drawing which shows typically the manufacturing method of the semiconductor device which concerns on embodiment.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings as necessary. In the figure, the same or equivalent components are denoted by the same reference numerals, and repeated description is omitted as appropriate.

  FIG. 1 is a plan view schematically showing a dicing tape-integrated adhesive sheet according to the embodiment, and FIG. 2 is a cross-sectional view of the dicing tape-integrated adhesive sheet according to the embodiment along the line II-II in FIG. It is a schematic cross section. FIG. 3 is a process cross-sectional view schematically showing the method for manufacturing a semiconductor device according to the embodiment, and is a schematic cross-sectional view showing a laminate in which a silicon wafer and a ring frame are bonded to a dicing tape-integrated adhesive sheet.

  A dicing tape integrated adhesive sheet 1 for manufacturing a semiconductor device shown in FIGS. 1 and 2 includes a long base film 10, a long adhesive layer (first adhesive layer) 20, and an adhesive layer (second adhesive layer). An adhesive layer) 30 and a die bonding film 40 are provided. As shown in FIG. 3, a ring frame (dicing ring) 50 and a silicon wafer 60 are disposed on the dicing tape-integrated adhesive sheet 1 for manufacturing a semiconductor device.

  As the base film 10, for example, a polyethylene film, a polypropylene film, a polyvinyl chloride film, a polyethylene terephthalate film, an ethylene-vinyl acetate copolymer film, and an ionomer resin film are used. For example, the thickness of the base film 10 is preferably about 15 to 200 μm, more preferably 40 to 150 μm, and still more preferably 60 to 120 μm.

  The pressure-sensitive adhesive layer 20 (first pressure-sensitive adhesive layer) is disposed so as to cover the entire one main surface of the base film 10. The thickness of the adhesive layer 20 is preferably about 5 to 50 μm, for example. As an adhesive which comprises the adhesion layer 20, an acrylic adhesive, a rubber adhesive, and a silicone adhesive are used, for example.

  The pressure-sensitive adhesive layer 20 is a weak pressure-sensitive pressure-sensitive adhesive layer that can be easily peeled off from the die bonding film 40 in the pickup process. The adhesive force between the adhesive layer 20 and the die bonding film 40 is preferably 0.6 N / 25 mm or less, more preferably 0.5 N / 25 mm or less, and further preferably 0.4 N / 25 mm or less. If the adhesion between the two is about this level, there is a tendency that the adhesive layer 20 and the die bonding film 40 can be easily separated in the pickup process. On the other hand, the adhesive force between the adhesive layer 20 and the die bonding film 40 is preferably 0.01 N / 25 mm or more, more preferably 0.03 N / 25 mm or more, and further preferably 0.05 N / 25 mm or more. If the adhesive strength between the two is about this level, the die bonding film 40 tends to be sufficiently prevented from peeling from the adhesive layer 20 during dicing. The adhesive force between the adhesive layer 20 and the die bonding film 40 is, for example, peeled off at a rate of 200 mm / min in the vertical direction using a “Tensilon tensile strength tester RTA-100 type” manufactured by Orientec or a similar tester ( It can be determined by measuring the peel force when it is peeled by 90 °.

  A plurality of the pressure-sensitive adhesive layers 30 (second pressure-sensitive adhesive layers) are arranged on the pressure-sensitive adhesive layer 20 at predetermined intervals along the longitudinal direction of the base film 10. The adhesive layer 30 is disposed in a region where the ring frame 50 is to be attached in the adhesive layer 20.

  Each pressure-sensitive adhesive layer 30 has, for example, an annular shape, and an opening 30 a having a circular cross section is provided at the center of each pressure-sensitive adhesive layer 30 so as to penetrate the pressure-sensitive adhesive layer 30. A portion 25 exposed from the opening 30 a in the adhesive layer 20 is a region where the die bonding film 40 is to be attached. The diameter of the opening 30a of the adhesive layer 30 is larger than the wafer diameter of the silicon wafer 60 to be attached to the die bonding film 40, and is 1.2 times as long as the wafer diameter of the silicon wafer 60. Preferably, the length is 1.1 times longer. By having such a relationship between the diameter of the opening 30a and the wafer diameter of the silicon wafer 60, it is ensured that the silicon wafer 60 is stuck on the overlapping portion of the die bonding film 40 and the adhesive layer 30, which will be described later. Can be prevented. The diameter of the opening 30a is preferably equal to or smaller than the inner diameter dimension of the opening 50a of the ring frame 50, and more preferably smaller than the inner diameter dimension of the opening 50a of the ring frame 50. For example, when the wafer diameter (diameter) of the silicon wafer 60 is 8 inches (about 200 mm), the diameter of the opening 30a of the adhesive layer 30 is preferably about 210 mm to 240 mm, and the thickness of the adhesive layer 30 is, for example, 5 to 5 mm. About 30 μm is preferable.

  As an adhesive which comprises the adhesion layer 30, an acrylic adhesive, a rubber adhesive, and a silicone adhesive are used, for example.

  The pressure-sensitive adhesive layer 30 is a strong pressure-sensitive adhesive layer for fixing a ring frame having adhesiveness that can reliably hold the ring frame 50 in the dicing process. The adhesive force between the adhesive layer 30 and the ring frame 50 is smaller than the adhesive force between the adhesive layer 20 and the adhesive layer 30. At this time, the adhesive force between the adhesive layer 30 and the ring frame 50 is preferably 0.6 N / 25 mm or more, more preferably 0.8 N / 25 mm or more, and further preferably 1.0 N / 25 mm or more. If the adhesive strength between the two is about this level, the ring frame 50 tends to be sufficiently prevented from peeling off from the adhesive layer 30 in the dicing step. The adhesion force between the adhesive layer 30 and the ring frame 50 can be obtained in the same manner as described above.

  The adhesive strength of the adhesive layer 30 is adjusted to be greater than the adhesive strength of the adhesive layer 20. That is, the adhesive force between the adhesive layer 20 and the die bonding film is smaller than the adhesive force between the adhesive layer 30 and the die bonding film. In order to increase the adhesive strength of the adhesive layer, a method such as lowering the molecular weight of the base polymer constituting the adhesive layer, adding an oligomer or monomer, or adding a tackifier represented by tacky fire, etc. Can be used. At this time, when a crosslinkable acrylic ester copolymer is used as the pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer, the tack force can be increased by reducing the amount of any cross-linking agent added. On the other hand, in order to reduce the adhesive strength of the adhesive layer, a method such as increasing the molecular weight of the base polymer constituting the adhesive layer or excluding oligomers or monomers can be used. At this time, when a crosslinkable acrylic ester copolymer is used as the pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer, the tack force can be lowered by increasing the amount of any cross-linking agent added.

  It is preferable that the adhesive which comprises the adhesion layer 20 and the adhesion layer 30 does not contain a radiation curing component. Thereby, the radiation irradiation process before and after the dicing process can be omitted, and stable pick-up performance can be ensured. The radiation curing component refers to a component that can be cured by radiation such as ultraviolet rays, electron beams, X-rays, β rays, and γ rays.

  In addition, the adhesive layer 32 is arrange | positioned away from the adhesive layer 30 so that the shape of the adhesive layer 30 may be followed at the both ends of the transversal direction of the adhesive layer 20. The adhesive layer 32 is made of the same adhesive as the adhesive layer 30.

  The die bonding film 40 has a circular shape, for example. The thickness of the die bonding film 40 is preferably about 1 to 100 μm, for example. The die bonding film 40 contains, for example, a thermosetting component and / or a thermoplastic resin and a filler as constituent components. A thermosetting component is a component which can be bridge | crosslinked by heating and can form a hardening body, for example, contains a thermosetting resin and contains the hardening | curing agent of the said thermosetting resin arbitrarily. As the thermosetting resin, conventionally known ones can be used, and there is no particular limitation. Among them, convenience as a semiconductor peripheral material (high-purity products are easily available, many types are available, and reactivity is easily controlled. ), An epoxy resin and an imide compound having at least two thermosetting imide groups in one molecule are preferable. The epoxy resin is usually used in combination with an epoxy resin curing agent.

  The epoxy resin is preferably a compound having two or more epoxy groups. The epoxy resin is preferably a phenol glycidyl ether type epoxy resin from the viewpoint of curability and cured product characteristics. Examples of phenolic glycidyl ether type epoxy resins include bisphenol A, bisphenol AD, bisphenol S, bisphenol F or a condensate of halogenated bisphenol A and epichlorohydrin, glycidyl ether of phenol novolac resin, glycidyl ether of cresol novolac resin and bisphenol. A novolak resin glycidyl ether. Among these, novolak type epoxy resins (such as glycidyl ether of cresol novolak resin and glycidyl ether of phenol novolac resin) are preferable in that the cured product has a high cross-linking density and can increase the adhesive strength during heating of the film. These can be used singly or in combination.

  Examples of epoxy resin curing agents include phenolic compounds, aliphatic amines, alicyclic amines, aromatic polyamines, polyamides, aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, dicyandiamide, organic Examples include acid dihydrazide, boron trifluoride amine complex, imidazoles and tertiary amines. Among these, phenol compounds are preferable, and phenol compounds having two or more phenolic hydroxyl groups are particularly preferable. More specifically, a naphthol novolak resin and a trisphenol novolak resin are preferable. When these phenolic compounds are used as an epoxy resin curing agent, it is possible to effectively reduce the contamination of the chip surface and device during heating for package assembly and the generation of outgas which causes odor.

  Examples of the thermoplastic resin include polyimide resin, polyamideimide resin, phenoxy resin, acrylic resin, polyamide resin, and urethane resin. These can be used singly or in combination.

  The filler is preferably an inorganic filler. More specifically, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, An inorganic filler containing at least one inorganic material selected from the group consisting of amorphous silica and antimony oxide is preferred. Among these, alumina, aluminum nitride, boron nitride, crystalline silica, and amorphous silica are preferable for improving thermal conductivity. For the purpose of adjusting melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica and non-crystalline silica Crystalline silica is preferred. In order to improve moisture resistance, alumina, silica, aluminum hydroxide and antimony oxide are preferred. These can be used singly or in combination.

  The die bonding film 40 may be a film obtained by coating and drying two kinds of varnishes having different glass transition temperatures. In this case, the type of varnish is not particularly limited, and the varnish thickness is not particularly limited, but it is preferable that the coating amount of the high tack varnish is smaller than the coating amount of the low tack varnish. For example, when obtaining a die bonding film 40 having a total thickness of 20 μm, it is preferable to set the coating amount of the high tack varnish to about 1 to 8 μm and the coating amount of the low tack varnish to about 19 to 12 μm. Thereby, when a burr | flash generate | occur | produces at the time of dicing, the tack | tuck intensity | strength of a burr | flash increases and it can fully suppress the fall of pick-up property, such as the fusion | melting of adjacent chips, and a pick-up mistake.

  The die bonding film 40 is disposed in the opening 30a of the adhesive layer 30 so as to be concentric with the opening 30a, and covers the entire portion 25 of the adhesive layer 20 exposed from the opening 30a. Further, the outer peripheral portion 40 a of the die bonding film 40 protrudes from the opening 30 a and overlaps the adhesive layer 30 in a state where it is in contact with the inner peripheral edge of the surface of the adhesive layer 30. That is, the die bonding film 40 has an outer peripheral portion 40 a that overlaps the adhesive layer 30 and a central portion 40 b that does not overlap the adhesive layer 30. From the viewpoint of sufficiently suppressing the peeling of the die bonding film 40 in the dicing process, the entire outer peripheral portion 40 a overlaps the adhesive layer 30 along the outer periphery of the die bonding film 40.

  The overlapping range (width) of the adhesive layer 30 and the die bonding film 40 is preferably 0.1 to 25 mm, more preferably 0.5 to 15 mm, and further preferably 1.0 to 10 mm. If the overlapping range is such a range, in the laminating step, only the portion (the central portion 40b) in contact with the adhesive layer 20 of the die bonding film 40 can be attached to the silicon wafer 60, and the dicing step In this case, since the outer peripheral portion 40a of the die bonding film 40 is further suppressed from becoming a peeling start point at which the die bonding film 40 is peeled from the adhesive layer 30, the scattering of the semiconductor chip is further suppressed.

  The adhesive force between the adhesive layer 30 and the die bonding film 40 is preferably 0.8 N / 25 mm or more, more preferably 1.0 N / 25 mm or more, and further preferably 1.2 N / 25 mm or more. If the adhesive strength between the two is about this level, the die bonding film 40 tends to be sufficiently prevented from peeling from the adhesive layer 30 during dicing. The adhesive force between the adhesive layer 30 and the die bonding film 40 can be determined in the same manner as described above.

  The ring frame 50 is usually a molded body made of metal or plastic. The ring frame 50 has, for example, a substantially annular shape, and a flat cutout (not shown) for guide is formed on a part of the outer periphery of the ring frame 50. The ring frame 50 has an opening 50a at the center. Needless to say, the inner diameter (diameter) of the opening 50a of the ring frame 50 is somewhat larger than the diameter of the silicon wafer 60 to be diced, and is adjusted to be equal to or larger than the diameter of the opening 30a of the adhesive layer 30. . The shape of the ring frame 50 is not limited to an annular shape, and various shapes conventionally used (for example, a rectangular shape) are used.

  The ring frame 50 is disposed on the adhesive layer 30 so that the opening 50a is concentric with the opening 30a. The ring frame 50 is disposed without overlapping the overlapping portion (the outer peripheral portion 40a) with the adhesive layer 30 in the die bonding film 40.

  The silicon wafer 60 is disposed on the central portion 40b of the die bonding film 40 without overlapping the adhesive layer 30, the outer peripheral portion 40a of the die bonding film 40, and the portion where the die bonding film 40 rises at the end of the central portion 40b. The A circuit is formed on the silicon wafer 60 through a necessary pretreatment. In the dicing process, the silicon wafer 60 is separated into pieces for each circuit, and a semiconductor chip is obtained.

  As described above, the dicing tape-integrated adhesive sheet 1 of the present embodiment is disposed on the base film 10, the first adhesive layer 20 disposed on the base film 10, and the first adhesive layer 20. A dicing tape-integrated adhesive sheet comprising: a second adhesive layer 30 having an opening 30a through which the first adhesive layer 20 is exposed; and a die bonding film 40 disposed so as to cover the opening 30a. Is larger than the diameter of the silicon wafer 60 disposed on the die bonding film 40, and the end 40 a of the die bonding film 40 partially overlaps the second adhesive layer 30. 20 and the die bonding film 40 are smaller in adhesion than the second adhesion layer 30 and the die bonding film 40, and the first adhesion layer 20. Adhesion between the second adhesive layer 30, a second adhesive layer 30 is larger than the adhesive force between the ring frame 50 disposed on the second adhesive layer 30.

  A dicing tape-integrated adhesive sheet 1 for manufacturing a semiconductor device is used for dicing and die bonding. In the dicing tape integrated adhesive sheet 1, since the sheet includes the adhesive layer 30 in addition to the adhesive layer 20, the adhesive force of the adhesive layer 20 and the adhesive force of the adhesive layer 30 can be individually adjusted. . Thereby, the ring frame 50 is peeled from the adhesive layer 30 in the dicing process while adjusting the adhesive force of the adhesive layer 20 so that the die bonding film 40 and the adhesive layer 20 of the dicing sheet are easily peeled in the pickup process. The adhesive force of the adhesive layer 30 can be adjusted so that it does not. Furthermore, in the dicing tape integrated adhesive sheet 1, the outer peripheral portion 40 a of the die bonding film 40 is overlapped with the adhesive layer 30, whereby the outer peripheral portion 40 a is bonded to the adhesive layer 30 whose adhesive force is adjusted. Thereby, since the outer peripheral part 40a of the die-bonding film 40 becomes a peeling start point in the dicing process and the die-bonding film 40 is prevented from peeling off, it is possible to suppress chip scattering. The dicing tape-integrated adhesive sheet 1 of this embodiment can improve the yield of semiconductor chips even when an ultrathin silicon wafer having a thickness of 100 μm or less is used.

  Next, a method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet 1 for manufacturing a semiconductor device will be described.

  4 to 6 are process cross-sectional views schematically showing the method for manufacturing a semiconductor device according to the embodiment. Specifically, FIG. 4 is a schematic cross-sectional view showing a process of dicing a silicon wafer with a dicing blade, and FIG. 5 is a schematic cross-sectional view showing a process of picking up a separated semiconductor chip with a die bonding film. FIG. 6 is a schematic cross-sectional view showing a semiconductor device using a picked-up semiconductor chip with a die bonding film.

  The laminated body in which the silicon wafer 60 is laminated on the dicing tape integrated adhesive sheet 1 includes the adhesive film in which the base material layer and the die bonding film 40 are laminated, and the base material film 10 and the adhesive layer (the adhesive layer 20 and the adhesive layer). Any of the adhesive films in which the layer 30) and the die bonding film 40 are laminated in this order can be used.

When using the adhesive film in which the base material layer and the die bonding film 40 are laminated, for example, the silicon wafer 60 is laminated on the dicing tape-integrated adhesive sheet 1 by the method shown in the following (1) or (2). A laminate can be obtained.
(1) First, the die bonding film 40 of the adhesive film and the silicon wafer 60 are bonded together. Next, the base material layer of the adhesive film is peeled off, and the adhesive layer of the dicing tape in which the base material film 10 and the adhesive layers (the adhesive layer 20 and the adhesive layer 30) are laminated and the die bonding film 40 are bonded together.
(2) First, the die bonding film 40 of the adhesive film and the adhesive layer of the dicing tape in which the base film 10 and the adhesive layer (the adhesive layer 20 and the adhesive layer 30) are laminated are bonded together. Next, the base material layer of the adhesive film is peeled off, and the die bonding film 40 and the silicon wafer 60 are bonded together.

  When the adhesive film in which the base film 10, the adhesive layer (the adhesive layer 20 and the adhesive layer 30), and the die bonding film 40 are laminated in this order is used, the die bonding film 40 of the adhesive film and the silicon wafer 60 are bonded together. Thereby, the laminated body by which the silicon wafer 60 was laminated | stacked on the dicing tape integrated adhesive sheet 1 can be obtained.

  In any of the above methods, the adhesive layer (adhesive layer 20 and adhesive layer 30) and the die bonding film 40 are such that all of the outer peripheral portion 40a of the die bonding film 40 adheres along the outer periphery of the die bonding film 40. The layers 30 are stacked so as to overlap.

  After obtaining a laminate in which the silicon wafer 60 is laminated on the dicing tape integrated adhesive sheet 1 by such a method, the ring frame 50 is disposed on the adhesive layer 30 of the dicing tape integrated adhesive sheet 1.

  Next, as shown in FIG. 4, the laminated body is cut with a rotary blade 70 of a cutting device (dicer), and the die bonding film 45 is bonded to the semiconductor chip 65. Get 80. In the dicing process, it is possible to use a full cut method that completely cuts the adhesive film, and it is also possible to use a method (half cut method) that does not completely cut the adhesive film and leaves a part.

  As a dicer and a rotary blade (blade) used when cutting the silicon wafer 60, commercially available ones can be used. As the dicer, for example, a full automatic dicing saw 6000 series and a semi-automatic dicing saw 3000 series manufactured by DISCO Corporation can be used. As the blade, for example, a dicing blade NBC-ZH05 series or NBC-ZH series manufactured by DISCO Corporation can be used.

  Further, in the process of cutting the laminate of the semiconductor device manufacturing adhesive sheet 1 and the silicon wafer 60, for example, not only a rotary blade such as a fully automatic dicing saw 6000 series manufactured by DISCO Corporation but also, for example, DISCO Corporation It is also possible to use a laser such as a full automatic laser saw 7000 series manufactured by the company.

  After the dicing step, as shown in FIG. 5, peeling is performed at the interface between the adhesive layer 20 and the die bonding film 45, and the semiconductor chip with adhesive film 80 is picked up. Then, the picked-up semiconductor chip with adhesive film 80 is mounted on a support base 85 as shown in FIG.

  Thereafter, the semiconductor chip 65 of the semiconductor chip with adhesive film 80 is connected to an external connection terminal (not shown) on the support base 85 via the wire 90. And the laminated body containing the semiconductor chip 65 is sealed with the sealing resin layer 95, and the semiconductor device 100 shown in FIG. 6 is obtained.

  The present invention is not limited to the above embodiment. For example, the adhesive layer 30 is not limited to an annular shape, and may be a rectangular shape. In this case, a ring frame having a rectangular ring shape is usually used, and a rectangular die bonding film is used. Further, the adhesive layer 30 is not limited to being disposed on the adhesive layer 20, and at least one adhesive layer 30 may be disposed on the adhesive layer 20 according to the number of semiconductor devices 100 manufactured.

  EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, this invention is not restrict | limited to these.

1. Preparation of die bonding film Etherdiamine 2000 (BASF) (0.02 mol), 1,12-diaminododecane (0.08 mol) was added to a 500 ml four-necked flask equipped with a thermometer, stirrer and calcium chloride tube. ) And 150 g of N-methyl-2-pyrrolidone were stirred at 60 ° C. to dissolve the diamine. After dissolution of the diamine, 2,2-bis [4- (3,4-dicarboxyphenoxy) phenyl] propane dianhydride (0.1 mol) was added in small portions. After reacting at 60 ° C. for 1 hour, the mixture was heated at 170 ° C. while blowing N ₂ gas to remove water azeotropically with a part of the solvent. This reaction solution was obtained as an NMP solution of polyimide resin.

  In the NMP solution of polyimide resin obtained above (including 100 parts by weight of polyimide resin), 4 parts by weight of cresol novolac type epoxy resin (manufactured by Tohto Kasei), 4,4 ′-[1- [4- [1- (4 -Hydroxyphenyl) -1-methylethyl] phenyl] ethylidene] bisphenol (Honshu Chemical) 2 parts by weight and tetraphenylphosphonium tetraphenylborate (Tokyo Kasei) 0.5 part by weight were added. Further, boron nitride filler (made by Mizushima alloy iron) is added to 25% by mass with respect to the total mass of solids, and Aerosil filler R972 (made by Nippon Aerosil) is added to 3% by mass with respect to the total weight of solids. Kneaded to get varnish. The prepared varnish was applied onto a release-treated polyethylene terephthalate film, heated at 80 ° C. for 30 minutes, and then heated at 120 ° C. for 30 minutes. Then, the polyethylene terephthalate film was peeled off at room temperature (25 ° C.) to obtain an adhesive film having a thickness of 25 μm as a die bonding film.

2. Preparation of dicing tape (1) Laminated product of adhesive layer A (first adhesive layer) and substrate Using 2-ethylhexyl acrylate and methyl methacrylate as main monomers, using hydroxyethyl methacrylate and acrylic acid as functional group monomers Then, an acrylic copolymer as an adhesive was obtained by a solution polymerization method. The weight average molecular weight of this acrylic copolymer was 400,000, and the glass transition point was -38 ° C. A pressure-sensitive adhesive solution was prepared by blending 15 parts by weight of a polyfunctional isocyanate crosslinking agent (manufactured by Mitsubishi Chemical Corporation) with respect to 100 parts by weight of this acrylic copolymer. This pressure-sensitive adhesive solution was applied on a biaxially stretched polyester film separator (thickness 38 μm) coated with a silicone release agent so that the thickness of the pressure-sensitive adhesive layer when dried was 10 μm. This was dried at 100 ° C. for 2 minutes to form an adhesive layer on the separator, and a polyolefin film (thickness: 100 μm) was laminated on the surface of the adhesive layer. The multilayer film was allowed to stand at room temperature for 1 week and sufficiently aged, and then used for the test.

(2) Adhesive layer B (second adhesive layer)
Using butyl acrylate, ethyl acrylate, and acrylonitrile as main monomers and using hydroxyethyl acrylate as a functional group monomer, an acrylic copolymer as an adhesive was obtained by a solution polymerization method. The weight average molecular weight of this acrylic copolymer was 700,000, and the glass transition point was −30 ° C. A pressure-sensitive adhesive solution was prepared by blending 2.2 parts by mass of a polyfunctional isocyanate crosslinking agent (manufactured by Nippon Polyurethane Industry Co., Ltd.) with respect to 100 parts by mass of this acrylic copolymer. This pressure-sensitive adhesive solution was applied on a biaxially stretched polyester film separator (thickness 25 μm) coated with a silicone release agent so that the thickness of the pressure-sensitive adhesive layer at the time of drying was 20 μm. This was dried at 100 ° C. for 2 minutes to form an adhesive layer on the separator, and another biaxially stretched polyester film separator (thickness 25 μm) coated with a silicone release agent was laminated on the adhesive layer surface.

(3) Adhesive layer a (second adhesive layer)
Using 2-ethylhexyl acrylate and methyl methacrylate as main monomers and using hydroxyethyl methacrylate and acrylic acid as functional group monomers, an acrylic copolymer as an adhesive was obtained by a solution polymerization method. The weight average molecular weight of this acrylic copolymer was 400,000, and the glass transition point was -38 ° C. A pressure-sensitive adhesive solution was prepared by blending 15 parts by weight of a polyfunctional isocyanate crosslinking agent (manufactured by Mitsubishi Chemical Corporation) with respect to 100 parts by weight of this acrylic copolymer. This pressure-sensitive adhesive solution was coated on a biaxially stretched polyester film separator (thickness 38 μm) coated with a silicone release agent so that the thickness of the pressure-sensitive adhesive layer when dried was 20 μm. This was dried at 100 ° C. for 2 minutes to form an adhesive layer on the separator, and another biaxially stretched polyester film separator (thickness 25 μm) coated with a silicone release agent was laminated on the adhesive layer surface.

(4) Laminated product of adhesive layer b (first adhesive layer) and substrate Adhesive by solution polymerization method using butyl acrylate, ethyl acrylate and acrylonitrile as main monomers and hydroxyethyl acrylate as functional group monomer An acrylic copolymer as an agent was obtained. The weight average molecular weight of this acrylic copolymer was 700,000, and the glass transition point was −30 ° C. A pressure-sensitive adhesive solution was prepared by blending 2.2 parts by mass of a polyfunctional isocyanate crosslinking agent (manufactured by Nippon Polyurethane Industry Co., Ltd.) with respect to 100 parts by mass of this acrylic copolymer. This pressure-sensitive adhesive solution was applied on a biaxially stretched polyester film separator (thickness 38 μm) coated with a silicone release agent so that the thickness of the pressure-sensitive adhesive layer when dried was 10 μm. This was dried at 100 ° C. for 2 minutes to form an adhesive layer on the separator, and a polyolefin film (thickness: 100 μm) was laminated on the surface of the adhesive layer. The multilayer film was allowed to stand at room temperature for 1 week and sufficiently aged, and then used for the test.

3. Production of semiconductor wafer laminate (Example 1)
On the adhesive layer A of the laminate (dicing tape) of the adhesive layer A and the substrate of (1) above, the adhesive layer B of (2) cut out in an annular shape with a diameter of 210 mm is used for fixing the ring frame. Pasted as a layer. Thereafter, a die bonding film circularly processed to a diameter of 220 mm was attached so as to be concentric with the adhesive layer B of (2), and a dicing tape integrated adhesive sheet was produced. Then, using “DM-300-H” manufactured by JCM Corporation, a semiconductor wafer having a diameter of 8 inches and a thickness of 50 μm is bonded to the die bonding film on a 60 ° C. hot plate, A laminated product of semiconductor wafers was produced.

(Comparative Example 1)
A laminated product of a semiconductor wafer was produced in the same manner as in Example 1 except that the adhesive layer a of (3) was used instead of the adhesive layer B of (2).

(Comparative Example 2)
A laminated product of semiconductor wafers in the same manner as in Example 1 except that in (1) above, the drying conditions were set at 100 ° C. for 10 minutes, and in (2), the drying conditions were set at 80 ° C. for 2 minutes. Was made.

(Comparative Example 3)
Lamination of a semiconductor wafer in the same manner as in Example 1 except that a laminated product of the adhesive layer b and the substrate of (4) was used instead of the laminated product of the adhesive layer A and the substrate of (1) above. An article was made.

(Comparative Example 4)
A laminated product of a semiconductor wafer was produced in the same manner as in Example 1 except that the adhesive layer B of (2) was cut into an annular shape having a diameter of 230 mm and the die bonding film and the adhesive layer B were not in contact with each other. .

(Comparative Example 5)
In place of the laminate of the adhesive layer A and the substrate of (1) above, a laminate of the adhesive layer b and the substrate of (4) was used, and instead of the adhesive layer B of (2) ( A laminated product of semiconductor wafers was produced in the same manner as in Example 1 except that the adhesive layer a in 3) was used.

4). Various evaluations (adhesion evaluation)
About the sample (laminated product of a semiconductor wafer) produced in the said Example 1 and Comparative Examples 1-5, the measurement of the adhesive force in each interface was performed as follows.

(I) Adhesive force between the adhesive layer and the ring frame interface The adhesive layer was attached to the ring frame under the conditions of 30 ° C., linear pressure 5 kgf, 10 mm / s, and cut into a width of 25 mm with a dicer. Then, using a Tensilon tensile strength tester “RTA-100 type”, the strength when the adhesive layer was peeled off at a rate of 200 mm / min in the vertical direction was defined as the adhesive force between the adhesive layer and the ring frame interface.
(Ii) Adhesive strength at the adhesive layer interface The measurement was performed in the same manner as in (i) except that one adhesive layer was attached to the other adhesive layer under the conditions of 60 ° C. and linear pressure 5 kgf, 10 mm / s.
(Iii) Adhesive strength between the adhesive layer and the die bonding film interface The measurement was performed in the same manner as in (i) except that the adhesive layer was attached to the die bonding film under the conditions of 60 ° C. and linear pressure 5 kgf, 10 mm / s.

(Dicing process)
The sample produced in the said Example 1 and Comparative Examples 1-5 was cut | disconnected using the full auto dicer "DFD-6361" by DISCO Corporation. In cutting the sample, an annular ring frame having an opening with a diameter of 250 mm was used. In the cutting of the sample, a single cut method in which processing is completed with one blade was adopted, and a dicing blade “NBC-ZH104F-SE 27HDBB” manufactured by DISCO Corporation was used as the blade. The sample was cut under the conditions of a blade rotation speed of 45,000 rpm and a cutting speed of 50 mm / s. The blade height at the time of cutting was set to cut a dicing substrate by 20 μm (80 μm). The semiconductor wafer was cut into a size of 10 × 10 mm to obtain a semiconductor chip.

  When the ring frame and the adhesive layer were separated in the dicing process, or when the die bonding film was peeled off or the semiconductor chip was jumped in the dicing process, it was judged as defective (B), and the above problems did not occur Was judged as good (A).

(Pickup process)
The pick-up property of the semiconductor chip obtained in the above process was evaluated using a flexible die bonder “DB-730” manufactured by Renesas East Japan Semiconductor. For the pickup collet, “RUBERBER TIP 13-087E-33 (size: 10 × 10 mm)” manufactured by Micromechanics Co., Ltd. is used. : 0.7 mm, tip shape: semicircle with a diameter of 350 μm) ”. Nine push-up pins were arranged with a pin center interval of 4.2 mm. The pick-up property was evaluated under the conditions of a pin push-up speed during pick-up: 10 mm / s and a push-up height: 1000 μm. When 100 consecutive chips were picked up and no chip crack or pick-up error occurred, it was judged as good (A), and when even one chip had chip crack or pick-up mistake occurred, it was judged as bad (B).

(Presence or absence of transfer to the ring frame)
After the pick-up process, the presence or absence of the transfer of the adhesive layer to the ring frame when the sample was peeled off from the ring frame was evaluated. Specifically, when the ring frame and the adhesive layer are peeled off by pressing each laminated product from the silicon wafer affixing surface side with the ring frame fixed, peeling occurs at the adhesive layer interface, and adhesion to the ring frame is caused. Those in which layer transfer did not occur were judged good (A), and those in which transfer occurred were judged bad (B).

  Table 1 shows the samples prepared in Example 1 and Comparative Examples 1 to 6 and the results of various evaluations in the dicing process and the pickup process.

In Comparative Example 1, the adhesion between the second adhesive layer and the ring frame was weak, and the second adhesive layer was peeled off from the ring frame during dicing.
In Comparative Example 2, the adhesive force between the first adhesive layer and the second adhesive layer is weaker than the adhesive force between the second adhesive layer and the ring frame, and the first adhesive layer is peeled off when the dicing tape is peeled from the ring frame. Peeling occurred at the interface between the layer and the second adhesive layer, and the second adhesive layer was transferred to the ring frame.
In Comparative Example 3, the adhesion between the first adhesive layer and the die bonding film was strong, and chip cracking and pickup errors occurred during pickup.
In Comparative Example 4, since the second adhesive layer was not in contact with the die bonding film, peeling of the die bonding film occurred during dicing.
In Comparative Example 5, the adhesive force between the first adhesive layer and the die bonding film was strong, and the adhesive force between the second adhesive layer, the die bonding film and the ring frame was weak. Therefore, the second adhesive layer peeled off from the ring frame during dicing, and die bonding film peeling and chip cracking occurred.

  From the above results, when manufacturing the semiconductor device, by using the dicing tape-integrated adhesive sheet of the present invention, it is possible to suppress the peeling of the ring frame and the scattering of the chip in the dicing process, and the good pickup property in the pickup process. It has been confirmed that it is possible to achieve this. According to the present invention, a semiconductor chip with a die bonding film can be easily picked up, so that a yield in manufacturing a semiconductor device can be improved.

DESCRIPTION OF SYMBOLS 1 ... Dicing tape integrated adhesive sheet 1, 10 ... Base film, 20 ... Adhesive layer (1st adhesive layer), 25 ... The part exposed from opening, 30 ... Adhesive layer (2nd adhesive layer), 30a ... Opening, 40, 45 ... die bonding film, 50 ... ring frame, 60 ... semiconductor wafer (silicon wafer), 100 ... semiconductor device.

Claims (3)

A substrate;
A first adhesive layer disposed on the substrate;
A second adhesive layer disposed on the first adhesive layer and having an opening through which the first adhesive layer is exposed;
A die bonding film disposed so as to cover the opening, and a dicing tape integrated adhesive sheet,
The diameter of the opening is larger than the diameter of the silicon wafer disposed on the die bonding film,
The end of the die bonding film partially overlaps the second adhesive layer,
The adhesive force between the first adhesive layer and the die bonding film is smaller than the adhesive force between the second adhesive layer and the die bonding film,
A dicing tape in which an adhesive force between the first adhesive layer and the second adhesive layer is larger than an adhesive force between the second adhesive layer and a ring frame disposed on the second adhesive layer. Integrated adhesive sheet.   The dicing tape-integrated adhesive sheet according to claim 1, wherein a width of an overlapping portion between the second adhesive layer and the die bonding film is 0.1 to 25 mm. A semiconductor device manufactured using the dicing tape-integrated adhesive sheet according to claim 1.

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