JP2020145392A - Dicing tape and dicing tape with adhesive film - Google Patents

Abstract

To provide a dicing tape that is less likely to tear and a dicing tape with an adhesive film when expanding the dicing tape in a cool expanding process.SOLUTION: A dicing tape 10 has a laminated structure including a base material 11 and an adhesive layer 12. A dicing tape X with an adhesive film has a laminated structure including the dicing tape 10 and an adhesive film 20. The adhesive film 20 is peelably in close contact with the adhesive layer 12 of the dicing tape 10. The adhesive layer 12 contains a base polymer with a glass transition temperature of -43°C or less.SELECTED DRAWING: Figure 1

Description

The present invention relates to a dicing tape that can be used in the manufacturing process of a semiconductor device, and a dicing tape with an adhesive film.

In the manufacturing process of a semiconductor device, a dicing tape with an adhesive film may be used to obtain a semiconductor chip with an adhesive film having a size equivalent to that of a chip for die bonding, that is, a semiconductor chip with an adhesive film. The dying tape with an adhesive film has, for example, a dying tape composed of a base material and an adhesive layer, and an adhesive film that is releasably adhered to the adhesive layer side. The adhesive film has a disk shape larger than the semiconductor wafer that is the work, and is concentrically bonded to the dicing tape having a disk shape larger than the adhesive film on the adhesive layer side, for example. .. A ring frame made of SUS can be attached to the area around the adhesive film that is not covered by the adhesive film in the adhesive layer of the dicing tape. The ring frame is a member that mechanically comes into contact with a transport mechanism such as a transport arm provided in various devices when the work is transported when the ring frame is attached to the dicing tape.

As one of the methods for obtaining a semiconductor chip with an adhesive film using a dicing tape with an adhesive film, a method is known in which the dicing tape in the dicing tape with an adhesive film is expanded and the adhesive film is cut. .. In this method, first, in a dicing tape with an adhesive film, a semiconductor wafer is attached onto the adhesive film in a state where the ring frame is attached to the area around the adhesive film of the dicing tape adhesive layer. This semiconductor wafer is, for example, processed so that it can be later divided into a plurality of semiconductor chips together with the division of the adhesive film. Next, a predetermined expanding device is used to cut the adhesive film so that a plurality of adhesive film pieces, each of which is in close contact with the semiconductor chip, are generated from the adhesive film on the dicing tape, and the dicing tape with the adhesive film is used. The dicing tape of the above is expanded in the wafer radial direction at a low temperature (for example, −20 ° C. to 0 ° C.) (cool expanding step). In this cool expanding step, the semiconductor wafer on the adhesive film is also split at the portion corresponding to the fractured portion of the adhesive film, and the semiconductor wafer is fragmented into a plurality of semiconductor chips on the dicing tape with the adhesive film or the dicing tape. .. Next, after the dicing tape is expanded to increase the separation distance between the chips on the dicing tape with the adhesive film, the dicing tape is combined with the chip-equivalent size adhesive film in which each semiconductor chip is in close contact with the dicing tape. After being pushed up by the pin member of the pickup mechanism from the lower side, it is picked up from the dicing tape (pickup process). In this way, a semiconductor chip with an adhesive film can be obtained. The semiconductor chip with an adhesive film is fixed to an adherend such as a mounting substrate by die bonding via the adhesive film. For example, the techniques relating to the dicing tape with an adhesive film used as described above are described in, for example, Patent Documents 1 and 2 below.

Japanese Unexamined Patent Publication No. 2007-2173 JP-A-2010-177401

When the dicing tape is expanded in the above-mentioned cool expanding step, the tension is concentrated on the portion between the extension surface of the outer peripheral side surface of the semiconductor wafer and the extension surface of the inner peripheral side surface of the ring frame, particularly in the adhesive film and the dicing tape. As a result, the dicing tape may tear. If the dicing tape is torn during the cool expanding step, the tension transmitted from the dicing tape is divided, which causes a disadvantage that the semiconductor wafer and the adhesive film cannot be divided. Further, if the tearing of the dicing tape becomes large, it becomes difficult to proceed to the next process.

The present invention has been conceived under the above circumstances, and an object of the present invention is a dicing tape that is less likely to tear when the dicing tape is expanded in the cool expanding process, and a dicing with an adhesive film. To provide the tape.

According to the first aspect of the present invention, a dicing tape is provided. This dicing tape has a laminated structure including a base material and a pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer contains a base polymer having a glass transition temperature (Tg) of −43 ° C. or lower. In a dicing tape having such a structure, the adhesive film is detachably adhered to the adhesive layer, and the semiconductor wafer is bonded to the adhesive film, and the dicing tape is placed at a low temperature (for example, −15 ° C. to 5 ° C.). ), The semiconductor wafer and the adhesive film are cut to obtain a semiconductor chip with an individualized adhesive film, which can be suitably used in a cutting step (cool expanding step).

As described above, the dicing tape according to the first aspect of the present invention contains a base polymer in which the pressure-sensitive adhesive layer has a Tg of −43 ° C. or lower. This configuration is preferable in that tearing of the dicing tape can be suppressed in the cool expanding step. That is, under the low temperature condition of the cool expanding step, the pressure-sensitive adhesive layer contains a base polymer having a Tg of −43 ° C. or lower, so that the pressure-sensitive adhesive layer has appropriate flexibility and cracks in the pressure-sensitive adhesive layer. It is considered that the tearing of the dicing tape as the starting point can be suppressed. From the viewpoint of suppressing tearing of the dicing tape, the Tg of the base polymer is preferably −50 ° C. or lower, more preferably −55 ° C. or lower. The Tg of the base polymer is preferably −65 ° C. or higher, more preferably −62 ° C. or higher. The configuration in which the Tg of the base polymer is preferably -65 ° C. or higher, more preferably -62 ° C. or higher transfers the tension of the dicing tape to the adhesive film without being absorbed by the pressure-sensitive adhesive layer in the cool expanding step. Therefore, it is suitable from the viewpoint that the semiconductor wafer can be cut well.

As the base polymer of the dicing tape according to the first aspect of the present invention, an acrylic polymer is preferable from the viewpoint that Tg can be easily controlled to −43 ° C. or lower.

In the dicing tape according to the first aspect of the present invention, the thickness of the pressure-sensitive adhesive layer is preferably 5 μm or more and 40 μm or less, more preferably 7 μm or more and 30 μm or less, and further preferably 10 μm or more and 15 μm or less. Such a configuration is preferable in order to suppress tearing of the dicing tape while ensuring the splittability of the semiconductor wafer. The configuration in which the thickness of the pressure-sensitive adhesive layer is 40 μm or less, preferably 30 μm or less, more preferably 15 μm or less suppresses the hardness as a bulk due to the thickening of the pressure-sensitive adhesive layer, and is caused by cracking of the pressure-sensitive adhesive layer. This is preferable in suppressing the tearing of the dicing tape. When the thickness of the pressure-sensitive adhesive layer is 5 μm or more, preferably 7 μm or more, more preferably 10 μm or more, the tension of the dicing tape is transmitted to the adhesive film in the cool expanding step, and the semiconductor wafer is satisfactorily cut. It is suitable from the viewpoint.

The elongation at break of the dicing tape according to the first aspect of the present invention at −15 ° C. is preferably 300% or more, more preferably 373% or more, still more preferably 400% or more. Such a configuration is suitable for suppressing tearing of the dicing tape. The elongation at break is preferably 600% or less, more preferably 500% or less.

The breaking strength of the dicing tape according to the first aspect of the present invention at −15 ° C. is preferably 15 N / 10 mm or more, more preferably 18 N / 10 mm or more, and further preferably 30 N / 10 mm or more. Such a configuration is suitable for suppressing tearing of the dicing tape. The breaking strength is preferably 35 N / 10 mm or less, more preferably 32 N / 10 mm or less, from the viewpoint of transmitting the tension of the dicing tape to the adhesive film in the cool expanding step to satisfactorily cut the semiconductor wafer.

According to the second aspect of the present invention, a dicing tape with an adhesive film is provided. The dying tape with an adhesive film provided by the present invention includes a dying tape according to a first aspect of the present invention and an adhesive film that is releasably adhered to the pressure-sensitive adhesive layer in the dying tape. Such a dicing tape with an adhesive film provided with the dicing tape according to the first aspect of the present invention is suitable for use in a cool expanding step, that is, it suppresses tearing of the dicing tape in the cool expanding step and is a semiconductor wafer. And suitable for cutting the adhesive film well.

In the dicing tape with an adhesive film according to the second aspect of the present invention, the breaking strength of the adhesive film at 25 ° C. is preferably 5N / 10mm or less, more preferably 3N / 10mm or less, still more preferably 1.5N / 10mm. It is as follows. Such a configuration is suitable for reducing the load applied to the dicing tape and suppressing the tearing of the dicing tape. The breaking strength is preferably 0.1 N / 10 mm or more, more preferably 0.2 N / 10 mm or more, still more preferably 0.5 N / 10 mm or more, from the viewpoint of appropriate breakability of the semiconductor wafer.

In the dicing tape with an adhesive film according to the second aspect of the present invention, the elongation at break of the adhesive film at 25 ° C. is preferably 100% or less, more preferably 80% or less, still more preferably 50% or less, most preferably. Is less than 15%. Such a configuration is suitable for reducing the load applied to the dicing tape and suppressing the tearing of the dicing tape. From the viewpoint of appropriate breakability of the semiconductor wafer, the elongation at break is preferably 0.5% or more, more preferably 1% or more, still more preferably 3% or more, and most preferably 5% or more.

It is sectional drawing of the dicing tape with an adhesive film which concerns on one Embodiment of this invention. It is a top view of the dicing tape with an icing adhesive film shown in FIG. A part of the steps in an example of a semiconductor device manufacturing method in which the dicing tape with an adhesive film shown in FIG. 1 is used is shown. The steps following the steps shown in FIG. 3 are shown. The steps following the steps shown in FIG. 4 are shown. The steps following the steps shown in FIG. 5 are shown. The steps following the steps shown in FIG. 6 are shown. The steps following the steps shown in FIG. 7 are shown. The steps following the steps shown in FIG. 8 are shown. A part of the steps in another example of the semiconductor device manufacturing method in which the dicing tape with an adhesive film shown in FIG. 1 is used is shown. The steps following the steps shown in FIG. 10 are shown. A part of the steps in another example of the semiconductor device manufacturing method in which the dicing tape with an adhesive film shown in FIG. 1 is used is shown. The steps following the steps shown in FIG. 12 are shown.

FIG. 1 is a schematic cross-sectional view of a dicing tape X with an adhesive film according to an embodiment of the present invention. The dicing tape X with an adhesive film has a laminated structure including the dicing tape 10 and the adhesive film 20 according to the embodiment of the present invention. The dicing tape 10 has a laminated structure including a base material 11 and an adhesive layer 12. The adhesive layer 12 has an adhesive surface 12a on the adhesive film 20 side. The adhesive film 20 is releasably adhered to the adhesive layer 12 of the dicing tape 10 or the adhesive surface 12a thereof. In the present embodiment, the dicing tape 10 and the adhesive film 20 have a disk shape and are arranged concentrically as shown in FIG. A ring frame made of SUS, for example, can be attached to the region around the adhesive film that is not covered by the adhesive film 20 in the adhesive layer 12 of the dicing tape 10. The ring frame is a member that mechanically comes into contact with a transport mechanism such as a transport arm provided in various devices when the work is transported in a state of being attached to the dicing tape 10. Such a dicing tape X with an adhesive film can be used in the process of obtaining a semiconductor chip with an adhesive film in the manufacture of a semiconductor device.

The base material 11 of the dicing tape 10 in the dicing tape X with an adhesive film is an element that functions as a support in the dicing tape 10 or the dicing tape X with an adhesive film. The base material 11 is, for example, a plastic base material having ultraviolet light transmittance, and a plastic film can be preferably used as the plastic base material. Examples of the constituent materials of the plastic base material include polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyetherimide, polyamide, total aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenylsulfide, and aramid. , Fluororesin, Cellulosic resin, and Silicone resin. Examples of the polyolefin include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homopolyprolene, polybutene, and polymethylpentene. Examples include ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer. Be done. Examples of polyesters include polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate. The base material 11 may be made of one kind of material or may be made of two or more kinds of materials. The base material 11 may have a single-layer structure or a multi-layer structure. When the base material 11 is made of a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a biaxially stretched film.

The surface of the base material 11 on the pressure-sensitive adhesive layer 12 side may be subjected to a physical treatment, a chemical treatment, or an undercoating treatment for enhancing the adhesion to the pressure-sensitive adhesive layer 12. Physical treatments include, for example, corona treatment, plasma treatment, sandmat treatment, ozone exposure treatment, flame exposure treatment, high-voltage impact exposure treatment, and ionizing radiation treatment. Examples of the chemical treatment include chromic acid treatment.

The thickness of the base material 11 is preferably 40 μm or more, more preferably 50 μm or more, from the viewpoint of ensuring the strength for the base material 11 to function as a support in the dicing tape 10 or the dicing tape X with an adhesive film. is there. Further, from the viewpoint of realizing appropriate flexibility in the dicing tape 10 or the dicing tape X with the adhesive film, the thickness of the base material 11 is preferably 200 μm or less, more preferably 180 μm or less.

The haze of the base material 11 is preferably 50 to 98%. The haze of a base material such as a plastic base material can be measured using, for example, a haze measuring device (trade name “HM-150”, manufactured by Murakami Color Technology Research Institute Co., Ltd.). The configuration in which the haze of the base material 11 is 50% or more is suitable for enabling position recognition by the optical sensor provided in the bonding device used for bonding the semiconductor wafer to the dicing tape X with the adhesive film. Is. The configuration in which the haze of the base material 11 is 98% or less is suitable for UV-curing the pressure-sensitive adhesive layer 12 by irradiating the pressure-sensitive adhesive layer 12 of the dicing tape 10 with ultraviolet rays through the base material 11.

The adhesive constituting the adhesive layer 12 of the dicing tape 10 is an adhesive (adhesive-reducing adhesive) capable of intentionally reducing the adhesive force by an external action such as irradiation or heating. Alternatively, it may be an adhesive (adhesive strength non-reducing type adhesive) whose adhesive strength is hardly or not reduced depending on an external action, and is individualized using a dicing tape X with an adhesive film. It can be appropriately selected according to the method and conditions for individualizing the semiconductor chip.

When a pressure-reducing pressure-sensitive adhesive is used as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, it is relative to the state in which the pressure-sensitive adhesive layer 12 exhibits relatively high adhesive strength in the manufacturing process and the usage process of the dicing tape X with an adhesive film. It is possible to properly use the state showing low adhesive strength. For example, when the adhesive film 20 is attached to the adhesive layer 12 of the dicing tape 10 in the manufacturing process of the dicing tape X with an adhesive film, or when the dicing tape X with an adhesive film is used in a predetermined dicing step, the adhesive is used. Utilizing the state in which the layer 12 exhibits a relatively high adhesive force, it is possible to suppress / prevent the floating or peeling of the adherend such as the adhesive film 20 from the adhesive layer 12, while after that, In the pick-up process for picking up the semiconductor chip with the adhesive film from the dicing tape 10 of the dicing tape X with the adhesive film, after reducing the adhesive force of the adhesive layer 12, the semiconductor chip with the adhesive film is removed from the adhesive layer 12. It becomes possible to pick up properly.

Examples of such a pressure-reducing pressure-sensitive adhesive include a radiation-curable pressure-sensitive adhesive (a pressure-sensitive adhesive) and a heat-foaming type pressure-sensitive adhesive. In the pressure-sensitive adhesive layer 12 of the present embodiment, one type of pressure-reducing pressure-sensitive adhesive may be used, or two or more types of pressure-reducing pressure-sensitive adhesive may be used. Further, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-reducing pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of a pressure-reducing pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-reducing pressure-sensitive adhesive, or a predetermined portion of the pressure-sensitive adhesive layer 12 (for example, attachment of a wafer). The central region, which is the target area) is formed from the adhesive strength-reducing adhesive, and other parts (for example, the region to which the ring frame is attached and outside the central region) are non-adhesive strength-reduced adhesive. It may be formed from an agent. When the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers forming the laminated structure may be formed of the pressure-reducing pressure-sensitive adhesive, and some layers in the laminated structure may be the pressure-reducing pressure-sensitive adhesive. It may be formed from.

As the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, for example, a pressure-sensitive adhesive that is cured by irradiation with electron beam, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays can be used. A curable type pressure-sensitive adhesive (ultraviolet curable pressure-sensitive adhesive) can be particularly preferably used.

As described above, the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 of the dicing tape 10 contains a base polymer having a glass transition temperature (Tg) of −43 ° C. or lower. This configuration is preferable in that tearing of the dicing tape 10 can be suppressed in the cool expanding step. That is, under the low temperature condition of the cool expanding step, the pressure-sensitive adhesive layer 12 contains a base polymer having a Tg of −43 ° C. or lower, so that the pressure-sensitive adhesive layer 12 has appropriate flexibility and the pressure-sensitive adhesive layer 12 It is considered that the tearing of the dicing tape 10 starting from the cracking of the dicing tape 10 can be suppressed. From the viewpoint of suppressing the tearing of the dicing tape 10, the Tg of the base polymer is preferably −50 ° C. or lower, more preferably −55 ° C. or lower. The Tg of the base polymer is preferably −65 ° C. or higher, more preferably −62 ° C. or higher. The configuration in which the Tg of the base polymer is preferably −65 ° C. or higher, more preferably −62 ° C. or higher allows the adhesive film 20 to prevent the tension of the dicing tape 10 from being absorbed by the pressure-sensitive adhesive layer 12 in the cool expanding step. It is suitable from the viewpoint that the semiconductor wafer can be satisfactorily divided by transmitting to.

The Tg of this base polymer may be measured according to, for example, JIS K 7121, or may be a calculated glass transition temperature calculated from the following Fox formula. This calculated glass transition temperature can be adjusted by selecting the type and amount of each monomer component constituting the base polymer (copolymer).

The calculated glass transition temperature (calculated Tg) can be calculated from Fox's equation [1].
1 / Calculation Tg = W1 / Tg (1) + W2 / Tg (2) + ... + Wn / Tn [1]
Here, W1, W2, ... Wn are the respective weight fractions (% by weight) of the monomer component (1), the monomer component (2), ... ), Tg (1), Tg (2), ... Tg (n) is a glass transition of the homopolymer of the monomer component (1), the monomer component (2), ... the monomer component (n). Represents temperature (unit is absolute temperature: K).
The glass transition temperature of homopolymers is known from various documents and catalogs, and is described in, for example, J. Brandup, EH Immergut, EA Grulke: Polymer Handbook: JOHNWILEY & SONS, INC. For monomers for which there are no numerical values in various documents, values measured by general thermal analysis, for example, differential thermal analysis or dynamic viscoelasticity measurement method can be adopted.

The content of the base polymer in the pressure-sensitive adhesive layer 12 is preferably 85% by weight or more with respect to the pressure-sensitive adhesive layer 12 from the viewpoint of imparting appropriate flexibility to the pressure-sensitive adhesive layer 12 under low temperature conditions of the cool expanding step. , 90% by weight or more is more preferable. The content of the base polymer in the pressure-sensitive adhesive layer 12 is based on the pressure-sensitive adhesive layer (100% by weight) from the viewpoint of blending functional components such as a radiation-polymerizable monomer component, an oligomer component, and a polymerization initiator. It is preferably 99% by weight or less, and more preferably 98% by weight or less.

In order to adjust the Tg of the base polymer (including the calculated Tg calculated by Fox's formula) to −43 ° C. or lower, the homopolymer has a monomer component having a low Tg (hereinafter referred to as “low Tg monomer”). It is preferable to adjust the blending ratio of the monomer component in which the homopolymer has a high Tg (hereinafter, referred to as “high Tg monomer”).

The Tg of the homopolymer of the low Tg monomer is preferably less than 100 ° C, more preferably less than 80 ° C, more preferably less than 60 ° C, from the viewpoint of easily adjusting the Tg of the base polymer to −43 ° C or lower. It is preferably less than 40 ° C, more preferably less than 20 ° C, more preferably less than 0 ° C, still more preferably less than −10 ° C.
The Tg of the homopolymer of the high Tg monomer is preferably −10 ° C. or higher, more preferably 0 ° C. or higher, more preferably 20 ° C. or higher, from the viewpoint that the Tg of the base polymer can be easily adjusted to −43 ° C. or lower. It is more preferably 40 ° C. or higher, more preferably 60 ° C. or higher, more preferably 80 ° C. or higher, still more preferably 100 ° C. or higher.

The ratio of low Tg monomer to high Tg monomer (molar ratio of low Tg monomer / high Tg monomer) may vary depending on the Tg of the monomer component used and its combination, but the Tg of the base polymer is adjusted to -43 ° C or lower. From the viewpoint of being easy and suppressing the tearing of the dicing tape 10, for example, 5 or more is preferable, and 10 or more is more preferable. The ratio is preferably 30 or less, more preferably 25 or less, from the viewpoint of adjusting the Tg of the base polymer to −65 ° C. or higher to ensure the splittability of the semiconductor wafer.

Examples of the base polymer in the pressure-sensitive adhesive layer 12 include an acrylic-based polymer as an acrylic pressure-sensitive adhesive, a urethane-based polymer as a urethane-based pressure-sensitive adhesive, and a silicone-based polymer as a silicone-based pressure-sensitive adhesive. Acrylic polymers are preferable from the viewpoint of easily adjusting the calculated Tg calculated by the above Fox formula.

The acrylic polymer described above preferably contains the most monomer unit derived from the (meth) acrylic acid ester in terms of mass ratio. "(Meta) acrylic" shall mean "acrylic" and / or "methacryl". Examples of the (meth) acrylic acid ester for forming the monomer unit of the acrylic polymer, that is, the (meth) acrylic acid ester which is a constituent monomer of the acrylic polymer, include (meth) acrylic acid alkyl ester and (meth) acrylic. Acid cycloalkyl esters and (meth) acrylic acid aryl esters can be mentioned.

Examples of the (meth) acrylic acid alkyl ester include methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, and iso of (meth) acrylic acid. Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (ie lauryl ester), tridecyl ester, tetradecyl ester , Hexadecyl ester, octadecyl ester, and eicosyl ester. Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl ester include phenyl (meth) acrylic acid and benzyl (meth) acrylic acid. As the constituent monomer of the acrylic polymer, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. As the (meth) acrylic acid ester for the acrylic polymer, 2-ethylhexyl acrylate is preferably used. Further, in order to appropriately express the basic properties such as adhesiveness due to the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12 and to adjust the Tg to −43 ° C. or lower, (in the entire constituent monomer of the acrylic polymer). The proportion of the meta) acrylic acid ester is preferably 70% by mass or more, more preferably 80% by mass or more.

The above acrylic polymer may be one or more types that can be copolymerized with (meth) acrylic acid ester, for example, from the viewpoint of modifying its cohesive force and heat resistance and adjusting Tg to −43 ° C. or lower. It may contain a monomer unit derived from the monomer of. Other copolymerizable monomers for forming a monomer unit of the acrylic polymer, that is, other copolymerizable monomers which are constituent monomers of the acrylic polymer, include, for example, a carboxy group-containing monomer, an acid anhydride monomer, and a hydroxy group. Examples thereof include a containing monomer, a nitrogen-containing monomer, an epoxy group-containing monomer, a sulfonic acid group-containing monomer, and a phosphoric acid group-containing monomer. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, and ( Examples include 8-hydroxyoctyl acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Nitrogen-containing monomers include, for example, acryloylmorpholine, acrylamide, and acrylonitrile. Examples of the epoxy group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, and (meth) acryloyloxynaphthalene sulfonic acid. Can be mentioned. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethylacryloyl phosphate. As the copolymerizable monomer for the acrylic polymer, at least one selected from the group consisting of a hydroxy group-containing monomer and a nitrogen-containing monomer is preferably used. As the copolymerizable monomer for an acrylic polymer, at least one selected from the group consisting of 2-hydroxyethyl (meth) acrylate and acryloyl morpholine is more preferably used.

When the above acrylic polymer contains a monomer unit derived from a hydroxy group-containing monomer (particularly 2-hydroxyethyl acrylate), that is, when the acrylic polymer contains a hydroxy group-containing monomer as its constituent monomer, the acrylic. The proportion of the hydroxy group-containing monomer as the constituent monomer in the system polymer is preferably 5 to 40 mol%, more preferably 10 to 30 mol%.

When the acrylic polymer contains a monomer unit derived from a nitrogen-containing monomer (particularly, acryloylmorpholine), that is, when the acrylic polymer contains a nitrogen-containing monomer as its constituent monomer, the constituent monomer in the acrylic polymer. The proportion of the nitrogen-containing monomer as is preferably 0 to 30 mol%, more preferably 5 to 20 mol%, still more preferably 10 to 20 mol%. In the dicing tape 10, the configuration in which the content ratio is 5 mol% or more, preferably 10 mol% or more is suitable for realizing high polarity of the polymer in the pressure-sensitive adhesive layer 12, and the pressure-sensitive adhesive layer 12 It is suitable for increasing the elasticity to obtain the splittability of the semiconductor wafer and the peelability of the semiconductor chip with the adhesive film after the split from the dicing tape 10. In the dicing tape 10, a configuration in which the content ratio is 30 mol% or less, preferably 20 mol% or less is preferable in that tearing of the dicing tape 10 can be suppressed.

The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as (meth) acrylic acid ester in order to form a crosslinked structure in the polymer skeleton. Such polyfunctional monomers include, for example, hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropanthry (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, polyglycidyl (meth) acrylate, polyester (meth) acrylate, and urethane ( Meta) acrylate can be mentioned. "(Meta) acrylate" shall mean "acrylate" and / or "methacrylate". As the constituent monomer of the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. In order to appropriately express the basic properties such as adhesiveness due to the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12, the ratio of the polyfunctional monomer in the total constituent monomers of the acrylic polymer is preferably 40 mol% or less. It is preferably 30 mol% or less.

Examples of the high Tg monomer include acryloylmorpholine (tg of homopolymer: 145 ° C.), acrylic nitrile (tg of homopolymer: 97 ° C.), methyl methacrylate (Tg of homopolymer: 105 ° C.), and the like. Phosphorus is preferred.
Examples of the low Tg monomer include 2-ethylhexyl acrylate (Tg of homopolymer: −70 ° C.), 2-hydroxyethyl acrylate (Tg of homopolymer: -15 ° C.), and butyl acrylate (Tg of homopolymer: −70 ° C.). −55 ° C.), 4-hydroxybutyl acrylate (Tg of homopolymer: −40 ° C.) and the like, and 2-ethylhexyl acrylate and 2-hydroxyethyl acrylate are preferable.

The acrylic polymer can be obtained by polymerizing a raw material monomer for forming the acrylic polymer. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of high cleanliness in the process of manufacturing the semiconductor device in which the dicing tape 10 or the dicing tape X with the adhesive film is used, the amount of low molecular weight substances in the adhesive layer 12 in the dicing tape 10 or the dicing tape X with the adhesive film is small. Where it is preferable, the weight average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3 million. The weight average molecular weight (Mw) of the acrylic polymer is a standard polystyrene-equivalent value obtained by measuring with a gel permeation chromatograph (GPC).

The pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 may contain, for example, a cross-linking agent in order to increase the average molecular weight of the base polymer such as an acrylic polymer. Examples of the cross-linking agent for forming a cross-linked structure by reacting with a base polymer such as an acrylic polymer include a polyisocyanate compound as an isocyanate-based cross-linking agent, an epoxy compound, a polyol compound, an aziridine compound, and a melamine-based cross-linking agent. The content of the cross-linking agent in the pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer is preferably 0.01 part by mass or more, more preferably 0.03, based on 100 parts by mass of the base polymer such as an acrylic polymer. It is by mass or more, more preferably 0.05 parts by mass or more. The content is preferably 5 parts by mass or less, more preferably 4 parts by mass or less, and more preferably 3 parts by mass or less.
The "Tg of the base polymer" in the present invention means the Tg of the base polymer before it reacts with the cross-linking agent.

When the pressure-sensitive adhesive layer 12 is a UV-curable pressure-sensitive adhesive layer whose adhesive strength is reduced by irradiation with ultraviolet rays, the pressure-sensitive adhesive for forming the UV-curable pressure-sensitive adhesive layer is an acrylic polymer which is an acrylic pressure-sensitive adhesive. Examples thereof include an additive-type UV-curable pressure-sensitive adhesive containing a base polymer such as the above and a UV-polymerizable monomer component or an oligomer component having a functional group such as a UV-polymerizable carbon-carbon double bond.

Examples of the above-mentioned ultraviolet-polymerizable monomer component for forming an ultraviolet-curable pressure-sensitive adhesive include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol tetra (meth). Examples include acrylates, dipentaerythritol monohydroxypenta (meth) acrylates, dipentaerythritol hexa (meth) acrylates, and 1,4-butanediol di (meth) acrylates. Examples of the above-mentioned ultraviolet-polymerizable oligomer component for forming an ultraviolet-curable pressure-sensitive adhesive include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and have a molecular weight of about 100 to 30,000. The one is suitable. The total content of the ultraviolet-polymerizable monomer component and the oligomer component in the ultraviolet-curable pressure-sensitive adhesive is determined within a range in which the adhesive strength of the formed pressure-sensitive adhesive layer 12 can be appropriately reduced, and a base polymer such as an acrylic polymer is used. It is preferably 5 to 500 parts by mass, and more preferably 40 to 150 parts by mass with respect to 100 parts by mass. Further, as the additive type ultraviolet curable pressure-sensitive adhesive, for example, those disclosed in JP-A-60-196956 may be used.

As the ultraviolet curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 12, for example, a base polymer having a functional group such as an ultraviolet-polymerizable carbon-carbon double bond at the end of the polymer main chain in the polymer side chain or the polymer main chain. Also included is an intrinsic UV curable pressure-sensitive adhesive containing. Such an intrinsic UV curable pressure-sensitive adhesive is suitable for suppressing an unintended change in adhesive properties over time due to the movement of low molecular weight components in the formed pressure-sensitive adhesive layer 12.

As the base polymer contained in the intrinsic UV curable pressure-sensitive adhesive, a polymer having an acrylic polymer as a basic skeleton is preferable. As the acrylic polymer forming such a basic skeleton, the above-mentioned acrylic polymer can be adopted. As a method for introducing an ultraviolet-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer having a predetermined functional group (first functional group) is copolymerized to obtain an acrylic polymer. After obtaining the compound, a compound having a predetermined functional group (second functional group) capable of reacting with the first functional group to be bonded and an ultraviolet-polymerizable carbon-carbon double bond is obtained from carbon-carbon. Examples thereof include a method of subjecting an acrylic polymer to a condensation reaction or an addition reaction while maintaining the ultraviolet polymerizable property of the double bond.
The "base polymer Tg" in the present invention reacts with a compound having a second functional group and an ultraviolet-polymerizable carbon-carbon double bond to introduce an ultraviolet-polymerizable carbon-carbon double bond. It shall mean the Tg of the base polymer before it is made.

Examples of the combination of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, and an isocyanate group. And hydroxy groups. Of these combinations, a combination of a hydroxy group and an isocyanate group or a combination of an isocyanate group and a hydroxy group is preferable from the viewpoint of ease of reaction tracking. Further, since it is technically difficult to prepare a polymer having a highly reactive isocyanate group, from the viewpoint of easy preparation or availability of an acrylic polymer, the above-mentioned first functionality on the acrylic polymer side It is more preferable that the group is a hydroxy group and the second functional group is an isocyanate group. In this case, the isocyanate compound having both the ultraviolet polymerizable carbon-carbon double bond and the isocyanate group as the second functional group, that is, the ultraviolet polymerizable unsaturated functional group-containing isocyanate compound is, for example, methacryloyl isocyanate, 2 Included are methacryloyloxyethyl isocyanate (MOI), and m-isopropenyl-α, α-dimethylbenzyl isocyanate.

The pressure-sensitive adhesive layer 12 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, and camphor. Examples include quinone, halogenated ketones, acylphosphinoxides, and acylphosphonates. Examples of α-ketol compounds include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, and 2-methyl-2-hydroxypro. Examples include piophenone and 1-hydroxycyclohexylphenyl ketone. Examples of acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2,2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio)-). Phenyl] -2-morpholinopropane-1 can be mentioned. Examples of the benzoin ether compound include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal-based compound include benzyldimethyl ketal. Examples of the aromatic sulfonyl chloride compound include 2-naphthalene sulfonyl chloride. Examples of the photoactive oxime compound include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Benzophenone compounds include, for example, benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Examples of thioxanthone compounds include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, and 2,4-diisopropyl. Thioxanthone is mentioned. The content of the photopolymerization initiator in the pressure-sensitive adhesive layer 12 is, for example, 0.05 to 10 parts by mass with respect to 100 parts by mass of the base polymer such as an acrylic polymer.

The pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 may contain a cross-linking accelerator, a pressure-sensitive adhesive, an anti-aging agent, and a colorant such as a pigment or a dye, in addition to the above-mentioned components. .. The colorant may be a compound that is colored by being irradiated with radiation. Examples of such compounds include leuco dyes.

The thickness of the pressure-sensitive adhesive layer 12 is preferably 5 μm or more and 40 μm or less, more preferably 7 μm or more and 30 μm or less, and further preferably 10 μm or more and 15 μm or less. Such a configuration is preferable in order to suppress tearing of the dicing tape 10 while ensuring the splittability of the semiconductor wafer. The configuration in which the thickness of the pressure-sensitive adhesive layer 12 is 40 μm or less, preferably 30 μm or less, more preferably 15 μm or less suppresses the hardness as a bulk due to the thickening of the pressure-sensitive adhesive layer 12, and the pressure-sensitive adhesive layer 12 It is preferable in suppressing the tearing of the dicing tape 10 due to the cracking. The configuration in which the thickness of the pressure-sensitive adhesive layer 12 is 5 μm or more, preferably 7 μm or more, more preferably 10 μm or more is such that the tension of the dicing tape 10 is transmitted to the adhesive film 20 in the cool expanding step to improve the semiconductor wafer. It is suitable from the viewpoint of dividing into.

The elongation at break of the dicing tape 10 having the above structure at −15 ° C. is preferably 300% or more, more preferably 373% or more, and more preferably 400% or more. Such a configuration is suitable for suppressing tearing of the dicing tape 10. The elongation at break is preferably 600% or less, more preferably 500% or less.

The breaking strength of the dicing tape 10 at −15 ° C. is preferably 15 N / 10 mm or more, more preferably 18 N / 10 mm or more, and further preferably 30 N / 10 mm or more. Such a configuration is suitable for suppressing tearing of the dicing tape. The breaking strength is preferably 35 N / 10 mm or less, more preferably 32 N / 10 mm or less, from the viewpoint of transmitting the tension of the dicing tape to the adhesive film in the cool expanding step to satisfactorily cut the semiconductor wafer.

The adhesive film 20 in the dicing tape X with an adhesive film has a structure capable of functioning as a thermosetting adhesive for dicing. The adhesive film 20 may have a composition containing a thermosetting resin and a thermoplastic resin as a resin component, or may be a thermoplastic resin having a thermosetting functional group that can react with a curing agent to form a bond. It may have a composition including. Such an adhesive film 20 may have a single-layer structure or may have a multi-layer structure having different compositions between adjacent layers.

When the adhesive film 20 has a composition containing a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, and silicone resin. And thermosetting polyimide resin. The adhesive film 20 may contain one type of thermosetting resin, or may contain two or more types of thermosetting resins. The epoxy resin is preferable as the thermosetting resin in the adhesive film 20 because the content of ionic impurities and the like that can cause corrosion of the semiconductor chip to be die-bonded tends to be small. Further, as a curing agent for developing thermosetting property in the epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type and orthocresol. Examples thereof include novolak type, trishydroxyphenylmethane type, tetraphenylol ethane type, hydantin type, trisglycidyl isocyanurate type, and glycidylamine type epoxy resins. Phenol novolac type epoxy resin, orthocresol novolac type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylol ethane type epoxy resin are highly reactive and heat resistant with phenol resin as a curing agent. It is preferable as the epoxy resin in the adhesive film 20 because of its excellent properties.

Examples of the phenolic resin that can act as a curing agent for the epoxy resin include novolak-type phenolic resin, resol-type phenolic resin, and polyoxystyrene such as polyparaoxystyrene. Examples of the novolak type phenol resin include phenol novolac resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin. The adhesive film 20 may contain one kind of phenol resin or two or more kinds of phenol resins as a curing agent for the epoxy resin. When a phenol novolac resin or a phenol aralkyl resin is used as a curing agent for an epoxy resin as an adhesive for die bonding, the connection reliability of the adhesive tends to be improved. Therefore, curing for the epoxy resin in the adhesive film 20 Preferable as an agent.

When the adhesive film 20 contains an epoxy resin and a phenol resin as a curing agent thereof, the hydroxyl group in the phenol resin is preferably 0.5 to 2.0 equivalents, more preferably 1 equivalent to 1 equivalent of the epoxy groups in the epoxy resin. Both resins are blended at a ratio of 0.8 to 1.2 equivalents. Such a configuration is preferable in order to sufficiently proceed the curing reaction of the epoxy resin and the phenol resin when the adhesive film 20 is cured.

The content ratio of the thermosetting resin in the adhesive film 20 is preferably 5 to 60% by mass, more preferably 10 to 50, from the viewpoint of appropriately expressing the function as the thermosetting adhesive in the adhesive film 20. It is mass%.

The thermoplastic resin in the adhesive film 20 has, for example, a binder function, and when the adhesive film 20 has a composition containing a thermosetting resin and a thermoplastic resin, the thermoplastic resin includes, for example, an acrylic resin. Natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, 6-nylon Examples thereof include polyamide resins such as 6,6-nylon, phenoxy resins, saturated polyester resins such as polyethylene terephthalate and polybutylene terephthalate, polyamideimide resins, and fluororesins. The adhesive film 20 may contain one type of thermoplastic resin, or may contain two or more types of thermoplastic resins. Acrylic resin is preferable as the thermoplastic resin in the adhesive film 20 because it has few ionic impurities and high heat resistance.

When the adhesive film 20 contains an acrylic resin as a thermoplastic resin, the acrylic resin preferably contains the most monomer units derived from the (meth) acrylic acid ester in terms of mass ratio.

Examples of the (meth) acrylic acid ester for forming the monomer unit of the acrylic resin, that is, the (meth) acrylic acid ester which is a constituent monomer of the acrylic resin, include (meth) acrylic acid alkyl ester and (meth) acrylic acid cyclo. Alkyl esters and (meth) acrylic acid aryl esters can be mentioned. Examples of such (meth) acrylic acid ester include the above-mentioned (meth) acrylic acid alkyl ester as a constituent monomer of the acrylic polymer for the pressure-sensitive adhesive layer 12. As the constituent monomer of the acrylic resin, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used.

The acrylic resin may contain a monomer unit derived from one or more other monomers copolymerizable with the (meth) acrylic acid ester, for example, from the viewpoint of modifying its cohesive force and heat resistance. Good. Other copolymerizable monomers for forming a monomer unit of the acrylic resin, that is, other copolymerizable monomers which are constituent monomers of the acrylic resin, include, for example, a carboxy group-containing monomer, an acid anhydride monomer, and a hydroxy group-containing monomer. , Nitrogen-containing monomer, epoxy group-containing monomer, sulfonic acid group-containing monomer, and phosphoric acid group-containing monomer. Specific examples of these monomers include those described above as constituent monomers of the acrylic polymer for the pressure-sensitive adhesive layer 12.

When the adhesive film 20 has a composition containing a thermoplastic resin with a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin for forming this thermosetting functional group-containing acrylic resin preferably contains the most monomer unit derived from the (meth) acrylic acid ester in terms of mass ratio. As such a (meth) acrylic acid ester, for example, the same (meth) acrylic acid ester as described above can be used as the constituent monomer of the acrylic polymer for the pressure-sensitive adhesive layer 12. On the other hand, examples of the thermosetting functional group for forming a thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxy group, and an isocyanate group. Of these, a glycidyl group and a carboxy group can be preferably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxy group-containing acrylic resin can be preferably used. Further, a curing agent capable of reacting with the thermosetting functional group is selected according to the type of the thermosetting functional group in the thermosetting functional group-containing acrylic resin. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, the same phenol resin as described above can be used as the curing agent for the epoxy resin.

In order to achieve a certain degree of cross-linking of the adhesive film 20 before being cured for die bonding, for example, it reacts with the functional groups at the molecular chain ends of the above-mentioned resin component contained in the adhesive film 20. It is preferable to add a polyfunctional compound capable of forming a bond as a cross-linking agent to the resin composition for forming an adhesive film. Such a configuration is suitable for improving the adhesive properties of the adhesive film 20 at a high temperature and for improving the heat resistance. Examples of such a cross-linking agent include polyisocyanate compounds. Examples of the polyisocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylenediocyanate, 1,5-naphthalenediocyanate, and adducts of polyhydric alcohol and diisocyanate. The content of the cross-linking agent in the resin composition for forming an adhesive film is determined from the viewpoint of improving the cohesive force of the adhesive film 20 formed with respect to 100 parts by mass of the resin having the above-mentioned functional group that can react with the cross-linking agent to form a bond. Is preferably 0.05 parts by mass or more, and preferably 7 parts by mass or less from the viewpoint of improving the adhesive strength of the formed adhesive film 20. Further, as the cross-linking agent in the adhesive film 20, another polyfunctional compound such as an epoxy resin may be used in combination with the polyisocyanate compound.

The adhesive film 20 may contain a filler. The blending of the filler into the adhesive film 20 is preferable in order to adjust the physical properties such as the elastic modulus of the adhesive film 20, the yield point strength, and the elongation at break. Examples of the filler include an inorganic filler and an organic filler. The filler may have various shapes such as spherical, needle-shaped, and flake-shaped. Further, the adhesive film 20 may contain one kind of filler or may contain two or more kinds of fillers.

Examples of the constituent materials of the above-mentioned inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate whisker. , Boron nitride, crystalline silica, and amorphous silica. Examples of the constituent material of the inorganic filler include elemental metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon and graphite. When the adhesive film 20 contains an inorganic filler, the content of the inorganic filler is preferably 10% by mass or more, more preferably 20% by mass or more. The content is preferably 50% by mass or less, more preferably 45% by mass or less.

Examples of the constituent materials of the organic filler include polymethyl methacrylate (PMMA), polyimide, polyamide-imide, polyetheretherketone, polyetherimide, and polyesterimide. When the adhesive film 20 contains an organic filler, the content of the organic filler is preferably 2% by mass or more, more preferably 5% by mass or more. The content is preferably 20% by mass or less, more preferably 15% by mass or less.

When the adhesive film 20 contains a filler, the average particle size of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. The configuration in which the average particle size of the filler is 0.005 μm or more is suitable for realizing high wettability and adhesiveness to an adherend such as a semiconductor wafer in the adhesive film 20. The configuration in which the average particle size of the filler is 10 μm or less is suitable for obtaining a sufficient filler addition effect in the adhesive film 20 and ensuring heat resistance. The average particle size of the filler can be determined using, for example, a luminous intensity type particle size distribution meter (trade name “LA-910”, manufactured by HORIBA, Ltd.).

The adhesive film 20 may contain a thermosetting catalyst. The blending of the thermosetting catalyst into the adhesive film 20 is preferable in order to sufficiently proceed the curing reaction of the resin component in curing the adhesive film 20 and to increase the curing reaction rate. Examples of such thermosetting catalysts include imidazole compounds, triphenylphosphine compounds, amine compounds, and trihalogen borane compounds. Examples of the imidazole compound include 2-methylimidazole, 2-undecyl imidazole, 2-heptadecyl imidazole, 1,2-dimethyl imidazole, 2-ethyl-4-methyl imidazole, 2-phenyl imidazole, 2-phenyl-. 4-Methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole Rium trimeritate, 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1') ')]-Ethyl-s-triazine, 2,4-diamino-6- [2'-ethyl-4'-methylimidazolyl- (1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole Can be mentioned. Examples of the triphenylphosphine compound include triphenylphosphine, tri (butylphenyl) phosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, diphenyltrilphosphine, tetraphenylphosphonium bromide, and methyl. Included are triphenylphosphonium bromide, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride, and benzyltriphenylphosphonium chloride. The triphenylphosphine-based compound shall also include a compound having both a triphenylphosphine structure and a triphenylborane structure. Examples of such compounds include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-triborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphine triphenylborane. Examples of amine compounds include monoethanolamine trifluoroborate and dicyandiamide. Examples of the trihalogen borane compound include trichloroborane. The adhesive film 20 may contain one type of thermosetting catalyst, or may contain two or more types of thermosetting catalysts.

The adhesive film 20 may contain one kind or two or more kinds of other components, if necessary. Examples of the other component include flame retardants, silane coupling agents, and ion trapping agents.

The breaking strength of the adhesive film 20 at 25 ° C. is preferably 5 N / 10 mm or less, more preferably 3 N / 10 mm or less, and further preferably 1.5 N / 10 mm or less. Such a configuration is suitable for reducing the load applied to the dicing tape 10 and suppressing the tearing of the dicing tape 10. The breaking strength is preferably 0.1 N / 10 mm or more, more preferably 0.2 N / 10 mm or more, still more preferably 0.5 N / 10 mm or more, from the viewpoint of appropriate breakability of the semiconductor wafer.

The elongation at break of the adhesive film 20 at 25 ° C. is preferably 100% or less, more preferably 80% or less, still more preferably 50% or less, and most preferably 15% or less. Such a configuration is suitable for reducing the load applied to the dicing tape 10 and suppressing the tearing of the dicing tape 10. From the viewpoint of appropriate breakability of the semiconductor wafer, the elongation at break is preferably 0.5% or more, more preferably 1% or more, still more preferably 3% or more, and most preferably 5% or more.

The dicing tape X with an adhesive film as described above can be manufactured, for example, as follows.

The dicing tape 10 of the dicing tape X with an adhesive film can be produced by providing the pressure-sensitive adhesive layer 12 on the prepared base material 11. For example, the resin base material 11 is produced by a film forming method such as a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T die extrusion method, a coextrusion method, or a dry laminating method. can do. The film or the base material 11 after the film formation is subjected to a predetermined surface treatment as needed. In the formation of the pressure-sensitive adhesive layer 12, for example, after preparing the pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer, the composition is first applied on the base material 11 or a predetermined separator to form the pressure-sensitive adhesive composition layer. To form. Examples of the method for applying the pressure-sensitive adhesive composition include roll coating, screen coating, and gravure coating. Next, in this pressure-sensitive adhesive composition layer, it is dried by heating if necessary, and a cross-linking reaction is caused if necessary. The heating temperature is, for example, 80 to 150 ° C., and the heating time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 12 is formed on the separator, the pressure-sensitive adhesive layer 12 with the separator is attached to the base material 11, and then the separator is peeled off. As a result, the above-mentioned dicing tape 10 having a laminated structure of the base material 11 and the pressure-sensitive adhesive layer 12 is produced.

In the production of the adhesive film 20 of the dicing tape X with the adhesive film, first, an adhesive composition for forming the adhesive film 20 is prepared, and then the composition is applied on a predetermined separator to form an adhesive composition layer. Form. Examples of the separator include polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, and plastic film and paper surface-coated with a release agent such as a fluorine-based release agent and a long-chain alkyl acrylate-based release agent. Can be mentioned. Examples of the method for applying the adhesive composition include roll coating, screen coating, and gravure coating. The adhesive composition layer is then heated to dry, if necessary, and to cause a cross-linking reaction, if necessary. The heating temperature is, for example, 70 to 160 ° C., and the heating time is, for example, 1 to 5 minutes. As described above, the above-mentioned adhesive film 20 can be produced in a form accompanied by a separator.

Two or more of the adhesive films 20 obtained above may be further laminated. The two or more adhesive films 20 to be laminated may have the same composition or different compositions. Further, the thicknesses of the two or more adhesive films 20 to be laminated may be the same or different. Lamination of two or more adhesive films 20 can be performed, for example, by laminating the surfaces of the adhesive film 20 with the separator obtained above, which are not in close contact with each other. The laminating temperature is, for example, 40 to 100 ° C, preferably 60 to 90 ° C. The laminating pressure (linear pressure) is, for example, 0.05 to 1.00 MPa, preferably 0.1 to 0.8 MPa. The laminating speed is, for example, 1 to 20 mm / s, preferably 5 to 15 mm / s. One separator of the laminated product of the bonded adhesive film 20 may be peeled off, and another adhesive film 20 with a separator may be further bonded.

In the production of the adhesive film X, the adhesive film 20 with a separator is then punched into a disk shape having a predetermined diameter, and then the adhesive film 20 is pressure-bonded to the adhesive layer 12 side of the adhesive film 10. to paste together. The bonding temperature is, for example, 30 to 50 ° C, preferably 35 to 45 ° C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf / cm, preferably 1 to 10 kgf / cm. Next, the dicing tape 10 thus bonded to the adhesive film 20 is punched into a disk shape having a predetermined diameter so that the center of the dicing tape 10 and the center of the adhesive film 20 coincide with each other.

As described above, the dicing tape X with an adhesive film can be produced. The dicing tape X with an adhesive film may be provided with a separator (not shown) on the adhesive film 20 side at least in a form of covering the adhesive film 20. The separator is an element for protecting the adhesive film 20 and the adhesive layer 12 from being exposed, and is peeled off from the adhesive film when the dicing tape X with the adhesive film is used.

3 to 9 show an example of a semiconductor device manufacturing method in which the dicing tape X with an adhesive film as described above is used.

In the present semiconductor device manufacturing method, first, as shown in FIGS. 3A and 3B, a modified region 30a is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been built on the side of the first surface Wa of the semiconductor wafer W, and the wiring structure and the like (not shown) required for the semiconductor element have already been formed on the first surface Wa. Has been done. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held inside the wafer while being held by the wafer processing tape T1. Laser light with the same light spots is applied to the semiconductor wafer W from the side opposite to the wafer processing tape T1 along the planned division line, and into the semiconductor wafer W due to ablation due to multiphoton absorption. A modified region 30a is formed. The modified region 30a is a fragile region for separating the semiconductor wafer W into semiconductor chip units. A method of forming a modified region 30a on a planned division line by irradiating a semiconductor wafer with a laser beam is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370. It is adjusted appropriately within the range of the following conditions.
<Laser light irradiation conditions>
(A) Laser light Laser light source Semiconductor laser excitation Nd: YAG laser Wavelength 1064 nm
Laser light spot cross section 3.14 × 10 ^-8 cm ²
Oscillation form Q-switched pulse repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser light quality TEM00
Polarization characteristics Linearly polarized light (B) Condensing lens Magnification 100 times or less NA 0.55
Transmittance with respect to laser light wavelength 100% or less (C) Moving speed of mounting table on which the semiconductor substrate is placed 280 mm / sec or less

Next, with the semiconductor wafer W held by the wafer processing tape T1, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness, whereby FIG. 3 (c) ), A semiconductor wafer 30A that can be fragmented is formed on a plurality of semiconductor chips 31 (wafer thinning step). The grinding process can be performed using a grinding device equipped with a grinding wheel.

Next, as shown in FIG. 4A, the semiconductor wafer 30A held by the wafer processing tape T1 is bonded to the adhesive film 20 side of the dicing tape X with the adhesive film. After that, as shown in FIG. 4B, the wafer processing tape T1 is peeled off from the semiconductor wafer 30A.

Next, after a ring frame 41 made of, for example, SUS is attached on the adhesive layer 12 around the adhesive film 20 in the dicing tape X with an adhesive film, a semiconductor wafer 30A is attached as shown in FIG. 5A. The dicing tape X with the adhesive film is fixed to the holder 42 of the expanding device via the ring frame 41.

Next, the first expanding step (cool expanding step) under a predetermined low temperature condition is performed as shown in FIG. 5B, and the semiconductor wafer 30A is separated into a plurality of semiconductor chips 31. The adhesive film 20 of the dicing tape X with an adhesive film is cut into small pieces of the adhesive film 21 to obtain a semiconductor chip 31 with an adhesive film. In this step, the hollow cylindrical push-up member 43 included in the expanding device is raised in contact with the dicing tape 10 at the lower side in the drawing of the dicing tape X with the adhesive film, and the semiconductor wafer 30A is bonded with the adhesive film. The dicing tape 10 of the tape X is expanded so as to be stretched in the two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30A.

This cool expanding step is performed under the condition that a tensile stress of, for example, 15 to 32 MPa is generated in the dicing tape 10. By controlling the tensile stress of the dicing tape 10 in the cool expanding step within this range, the semiconductor wafer 30A can be satisfactorily cut in the reformed region 30a without tearing the dicing tape 10.

The temperature condition in the cool expanding step is, for example, 0 ° C. or lower, preferably -20 to -5 ° C., more preferably -15 to -5 ° C., and more preferably -15 ° C. By controlling the temperature condition of the cool expanding step within this range, the semiconductor wafer 30A can be satisfactorily cut in the reformed region 30a without tearing the dicing tape 10.

The expanding speed (the speed at which the push-up member 43 rises) in the cool expanding step is, for example, 1 to 400 mm / sec. By controlling the expanding speed within this range, the semiconductor wafer 30A can be satisfactorily cut in the modified region 30a without tearing the dicing tape 10.

The amount of expansion in the cool expanding step is, for example, 3 to 16 mm. By controlling the expanding amount within this range, the semiconductor wafer 30A can be satisfactorily cut in the modified region 30a without tearing the dicing tape 10.

These conditions regarding expansion in the cool expanding step are the same in the cool expanding step described later.

By such a cool expanding step, the adhesive film 20 of the dicing tape X with an adhesive film is cut into small pieces of the adhesive film 21 to obtain a semiconductor chip 31 with an adhesive film. Specifically, in this step, cracks are formed in the fragile reformed region 30a of the semiconductor wafer 30A, and individualization into the semiconductor chip 31 occurs. At the same time, in this step, in the adhesive film 20 that is in close contact with the adhesive layer 12 of the expanded dicing tape 10, deformation is suppressed in each region of the semiconductor wafer 30A in which each semiconductor chip 31 is in close contact. Then, the tensile stress generated in the dicing tape 10 acts on the portion of the wafer facing the crack-forming portion without such a deformation suppressing action occurring. As a result, the portion of the adhesive film 20 facing the crack-forming portion between the semiconductor chips 31 is cut. After this step, as shown in FIG. 5C, the push-up member 43 is lowered to release the expanded state of the dicing tape 10.

Next, the second expanding step (normal temperature expanding step) is performed as shown in FIGS. 6 (a) and 6 (b), and the distance between the semiconductor chips 31 with the adhesive film is increased. In this step, the table 44 provided in the expanding device is raised, and the dicing tape 10 of the dicing tape X with the adhesive film is expanded. The table 44 is capable of vacuum-sucking the work by applying a negative pressure to the work on the table surface. The temperature condition in the second expanding step is, for example, 10 ° C. or higher, preferably 15 to 30 ° C. The expanding speed (the speed at which the table 44 rises) in the second expanding step is, for example, 0.1 to 10 mm / sec. The amount of expansion in the second expanding step is, for example, 3 to 16 mm. In this step, the dicing tape 10 is expanded by raising the table 44 (this increases the separation distance of the semiconductor chip 31 with the adhesive film), and then the table 44 vacuum-adsorbs the dicing tape 10. Then, as shown in FIG. 6C, the table 44 is lowered together with the work while maintaining the adsorption by the table 44. In the present embodiment, in this state, the periphery of the semiconductor wafer 30A (the portion outside the semiconductor chip 31 holding region) of the dicing tape X with the adhesive film is heated and shrunk (heat shrink step). After that, the vacuum suction state by the table 44 is released. By passing through the heat shrink step, the dicing tape X with the adhesive film is in a state where a predetermined degree of tension can act on the wafer bonding region that has been stretched and once relaxed in the above-mentioned first expanding step and second expanding step. The separation distance between the semiconductor chips 31 is fixed even after the vacuum suction state is released.

Next, in the present semiconductor device manufacturing method, as shown in FIG. 7, ultraviolet irradiation is performed on the pressure-sensitive adhesive layer 12 to promote ultraviolet curing and reduce the adhesive force (ultraviolet irradiation step). Specifically, for example, using a high-pressure mercury lamp, ultraviolet irradiation R is applied to the adhesive layer 12 from the side of the base material 11 of the dicing tape 10 over the entire surface. Irradiation integrated light quantity is, for example, 50 to 500 mJ / cm ^2, preferably 100~300mJ / cm ^2.

In the present semiconductor device manufacturing method, next, a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape X with an adhesive film using a cleaning liquid such as water is performed as necessary, and then both the pickup mechanism and the expanding mechanism are used. The pick-up process is performed using the dicing bonding apparatus provided.

Specifically, first, as shown in FIG. 8A, a dicing tape X with an adhesive film or a dicing tape 10 thereof with a plurality of semiconductor chips 31 is attached to a holder 45 of the die bonding device via a ring frame 41. In the fixed state, the hollow cylindrical push-up member 46 included in the device abuts on the dicing tape 10 at the lower side in the drawing of the dicing tape 10 and is raised. As a result, the dicing tape 10 is expanded so as to be stretched in two-dimensional directions including its radial direction and circumferential direction (expansion before pickup).

Next, as shown in FIG. 8B, the semiconductor chip 31 with the adhesive film is picked up from the dicing tape 10. For example, with respect to the semiconductor chip 31 with an adhesive film to be picked up, the pin member 47 of the pick-up mechanism is raised on the lower side in the drawing of the dicing tape 10, pushed up through the dicing tape 10, and then sucked and held by the suction jig 48. .. In this pickup, the push-up speed of the pin member 47 is, for example, 1 to 100 mm / sec, and the push-up amount of the pin member 47 is, for example, 50 to 3000 μm.

Next, as shown in FIG. 9A, the picked-up semiconductor chip 31 with an adhesive film is temporarily fixed to a predetermined adherend 51 via the adhesive film 21. Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring board.

Next, as shown in FIG. 9B, the electrode pad (not shown) of the semiconductor chip 31 and the terminal portion (not shown) of the adherend 51 are electrically connected via the bonding wire 52 ((not shown). Wire bonding process). The connection between the electrode pad of the semiconductor chip 31 or the terminal portion of the adherend 51 and the bonding wire 52 is realized by ultrasonic welding accompanied by heating, and the adhesive film 21 is not thermally cured. As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The wire heating temperature in wire bonding is, for example, 80 to 250 ° C. The heating time is several seconds to several minutes.

Next, as shown in FIG. 9C, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 and the bonding wire 52 on the adherend 51 (sealing step). In this step, the adhesive film 21 is thermally cured. In this step, for example, the sealing resin 53 is formed by a transfer molding technique performed using a mold. As the constituent material of the sealing resin 53, for example, an epoxy resin can be used. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ° C., and the heating time is, for example, 60 seconds to several minutes. If the sealing resin 53 is not sufficiently cured in this step (sealing step), a post-curing step for completely curing the sealing resin 53 is performed after this step. Even if the adhesive film 21 is not completely thermoset in the sealing step, the adhesive film 21 can be completely thermoset together with the sealing resin 53 in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185 ° C., and the heating time is, for example, 0.5 to 8 hours.

As described above, the semiconductor device can be manufactured.

In the present semiconductor device manufacturing method, instead of the above-described configuration in which the semiconductor wafer 30A is bonded to the dicing tape X with an adhesive film, the semiconductor wafer 30B produced as follows is attached to the dicing tape X with an adhesive film. It may be pasted together.

In the production of the semiconductor wafer 30B, first, as shown in FIGS. 10A and 10B, a dividing groove 30b is formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been built on the side of the first surface Wa of the semiconductor wafer W, and the wiring structure and the like (not shown) required for the semiconductor element have already been formed on the first surface Wa. Has been done. In this step, after the wafer processing tape T2 having the adhesive surface T2a is bonded to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held in a state where the semiconductor wafer W is held by the wafer processing tape T1. A dividing groove 30b having a predetermined depth is formed on the first surface Wa side by using a rotating blade such as a dicing device. The dividing groove 30b is a gap for separating the semiconductor wafer W into semiconductor chip units (the dividing groove 30b is schematically represented by a thick line in the drawings).

Next, as shown in FIG. 10C, the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T2 from the semiconductor wafer W is attached. Is peeled off.

Next, as shown in FIG. 10D, with the semiconductor wafer W held by the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. (Wafer thinning process). By this wafer thinning step, in this embodiment, a semiconductor wafer 30B that can be fragmented is formed on a plurality of semiconductor chips 31. Specifically, the semiconductor wafer 30B has a portion (connecting portion) for connecting a portion of the wafer to be fragmented into a plurality of semiconductor chips 31 on the second surface Wb side. The thickness of the connecting portion of the semiconductor wafer 30B, that is, the distance between the second surface Wb of the semiconductor wafer 30B and the tip of the dividing groove 30b on the second surface Wb side is, for example, 1 to 30 μm. The semiconductor wafer 30B produced as described above may be bonded to the dicing tape X with an adhesive film instead of the semiconductor wafer 30A, and then the above-described steps may be performed with reference to FIGS. 5 to 9. ..

11 (a) and 11 (b) specifically represent a first expanding step (cool expanding step) performed after the semiconductor wafer 30B is attached to the dicing tape X with an adhesive film. In this step, the hollow cylindrical push-up member 43 included in the expanding device is raised in contact with the dicing tape 10 at the lower side in the drawing of the dicing tape X with the adhesive film, and the dicing with the adhesive film attached to the semiconductor wafer 30B is raised. The dicing tape 10 of the tape X is expanded so as to be stretched in the two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30B. By such a cool expanding step, the thin-walled and fragile portion of the semiconductor wafer 30B is split and individualized into the semiconductor chip 31. At the same time, in this step, in the adhesive film 20 which is in close contact with the adhesive layer 12 of the expanded dicing tape 10, deformation is suppressed in each region where each semiconductor chip 31 is in close contact, while the semiconductor chip 31 The tensile stress generated in the dicing tape 10 acts on the portion facing the dividing groove between the dicing tapes 10 without such a deformation suppressing action. As a result, the portion of the adhesive film 20 facing the dividing groove between the semiconductor chips 31 is cut. The semiconductor chip 31 with an adhesive film thus obtained is subjected to a mounting process in a semiconductor device manufacturing process after undergoing the above-mentioned pickup process with reference to FIG.

In the present semiconductor device manufacturing method, the wafer thinning step shown in FIG. 12 may be performed instead of the wafer thinning step described above with reference to FIG. 10 (d). After going through the above-mentioned process with reference to FIG. 10 (c), in the wafer thinning step shown in FIG. 12, the wafer becomes a predetermined thickness while the semiconductor wafer W is held by the wafer processing tape T3. The semiconductor wafer split body 30C including the plurality of semiconductor chips 31 and held on the wafer processing tape T3 is formed by being thinned by grinding from the second surface Wb. In this step, a method of grinding the wafer until the dividing groove 30b itself is exposed on the second surface Wb side (first method) may be adopted, or from the second surface Wb side to the dividing groove 30b. A method in which the wafer is ground to the front, and then a crack is generated between the dividing groove 30b and the second surface Wb by the action of a pressing force from the rotary grindstone to the wafer to form the semiconductor wafer divided body 30C (second). Method) may be adopted. Depending on the method adopted, the depth of the dividing groove 30b formed as described above with reference to FIGS. 10 (a) and 10 (b) from the first surface Wa is appropriately determined. .. In FIG. 12, the dividing groove 30b that has undergone the first method, the dividing groove 30b that has undergone the second method, and the cracks connected thereto are schematically represented by thick lines. The semiconductor wafer divided body 30C produced in this manner is bonded to the dicing tape X with an adhesive film instead of the semiconductor wafer 30A and the semiconductor wafer 30B, and then each step described above with reference to FIGS. 5 to 9 is performed. It may be done.

13 (a) and 13 (b) specifically represent a first expanding step (cool expanding step) performed after the semiconductor wafer divided body 30C is bonded to the dicing tape X with an adhesive film. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised in contact with the dicing tape 10 at the lower side in the drawing of the dicing tape X with the adhesive film, and the adhesive film to which the semiconductor wafer divided body 30C is attached is attached. The dicing tape 10 of the dicing tape X is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer divided body 30C. In the adhesive film 20 that is in close contact with the adhesive layer 12 of the dicing tape 10 that is expanded by such a cool expanding step, deformation is suppressed in each region where each semiconductor chip 31 of the semiconductor wafer divided body 30C is in close contact. On the other hand, the tensile stress generated in the dicing tape 10 acts on the portion of the semiconductor chip 31 facing the dividing groove 30b without such a deformation suppressing action. As a result, the portion of the adhesive film 20 facing the dividing groove 30b between the semiconductor chips 31 is cut. The semiconductor chip 31 with an adhesive film thus obtained is subjected to a mounting process in a semiconductor device manufacturing process after undergoing the above-mentioned pickup process with reference to FIG.

[Examples 1 to 5, Comparative Examples 1 to 3]
<Making dicing tape>
2-Ethylhexyl acrylate (2EHA; homopolymer Tg: -70 ° C.) and 2-hydroxyethyl acrylate (HEA) in a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirrer. Homopolymer Tg: -15 ° C.) and acryloylmorpholin (ACMO; homopolymer Tg: 145 ° C.) were used in the proportions (molar parts) shown in Table 1 with the polymerization initiator benzoyl peroxide. , A mixture containing toluene as a polymerization solvent (base 55 wt%) was stirred at 60 ° C. for 10 hours in a nitrogen atmosphere (polymerization reaction). In this mixture, the content of benzoyl peroxide is 0.3 parts by mass with respect to 100 parts by mass of the monomer component, and the content of toluene is 60 parts by mass with respect to 100 parts by mass of the monomer component. By this polymerization reaction, a polymer solution containing an acrylic polymer P ₁ was obtained. Table 1 shows the glass transition temperature (Tg) of the acrylic polymer P ₁ calculated by the Fox formula from the monomer component composition.

Next, a mixture containing the polymer solution containing the acrylic polymer P ₁ , 2-methacryloyloxyethyl isocyanate (MOI), and dibutyltin dilaurylate as an addition reaction catalyst was mixed at 50 ° C. for 60 hours under an air atmosphere. Stirred in (addition reaction). In the reaction solution, the amount of MOI blended is 1.4 parts by mass with respect to 100 parts by mass of the acrylic polymer P ₁ . Further, in the reaction solution, the blending amount of dibutyltin dilaurylate is 0.1 part by mass with respect to 100 parts by mass of the acrylic polymer P ₁ . By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacryloyl group in the side chain was obtained. Next, in the polymer solution, 1.1 parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Toso Co., Ltd.) and 3 parts by mass of photopolymerization were started with respect to 100 parts by mass of the acrylic polymer P _2. An agent (trade name "Irgacure 184", manufactured by BASF) is added and mixed, and the mixture is diluted by adding toluene so that the viscosity of the mixture at room temperature becomes 500 mPa · s, and the pressure-sensitive adhesive solution is obtained. Got Next, an adhesive solution was applied on the silicone release-treated surface of the PET separator having the surface subjected to the silicone release treatment using an applicator to form a coating film, and the coating film was formed at 120 ° C. for 2 After heating and drying for 1 minute, a pressure-sensitive adhesive layer having a thickness of 10 μm was formed on the PET separator. Next, using a laminator, a base material made of ethylene-vinyl acetate copolymer (EVA) (trade name "RB0103", thickness 125 μm, manufactured by Kurabo Industries Ltd.) was applied to the exposed surface of this pressure-sensitive adhesive layer at room temperature. I pasted them together. As described above, the dicing tapes of Examples 1 to 5 and Comparative Examples 1 to 3 were prepared.

<Making an adhesive film>
15 parts by mass of acrylic resin (trade name "Taisan Resin SG-280", manufactured by Nagase Chemtech Co., Ltd.), 29 parts by mass of epoxy resin (trade name "EPPN 501HY", manufactured by Nippon Kayaku Co., Ltd.), and phenol resin (trade name "EPPN 501HY", manufactured by Nippon Kayaku Co., Ltd.) 16 parts by mass of product name "HF-1M" (manufactured by Meiwa Kasei Co., Ltd.) and 40 parts by mass of an inorganic filler (trade name "SE-2050MCV", spherical silica, manufactured by Admatex Co., Ltd.) are dissolved in methyl ethyl ketone. An adhesive composition solution having a concentration of 40 to 50% by mass was prepared.
This adhesive composition solution is applied as a release liner on a PET separator made of a polyethylene terephthalate film having a thickness of 50 μm, which has been mold-released with silicone, and then dried at 130 ° C. for 2 minutes to form an adhesive film having a thickness of 60 μm. Was produced. A 120 μm adhesive film was produced by laminating the produced 60 μm adhesive films (laminating conditions: 80 ° C., 0.15 MPa, 10 mm / s).

<Making a dicing tape with an adhesive film>
The above-mentioned adhesive film with a PET separator was punched into a disk shape having a diameter of 330 mm. Next, after peeling the PET separator from the adhesive film and peeling the PET separator from the dicing tape described above, the pressure-sensitive adhesive layer exposed on the dicing tape and the surface exposed by the peeling of the PET separator on the adhesive film are separated. It was bonded using a roll laminator. In this bonding, the bonding speed was 10 mm / min, the temperature condition was 25 ° C., and the pressure condition was 0.15 MPa. Then, only the bonded portion of the adhesive film was irradiated with ultraviolet rays (300 mJ / cm ² ). As described above, the dicing tapes with adhesive films of Examples 1 to 5 and Comparative Examples 1 to 3 having a laminated structure containing the dicing tape and the adhesive film were produced.

<Measurement of breaking elongation and breaking strength of dicing tape>
The breaking elongation and breaking strength of each dicing tape of Examples 1 to 5 and Comparative Examples 1 to 3 were measured as follows. A dicing tape test piece (width 10 mm × length 100 mm) was cut out from the dicing tape. A required number of dicing tape test pieces were prepared for each of the dicing tapes of Examples 1 to 5 and Comparative Examples 1 to 3. Then, a tensile test is performed on the dicing tape test piece using a tensile tester (trade name "Autograph AGS-50NX", manufactured by Shimadzu Corporation), and the dicing tape test piece stretched at a predetermined tensile speed. The breaking elongation and breaking strength were measured. In the tensile test, the initial interchuck distance is 50 mm, the temperature condition is −15 ° C., and the tensile speed is 300 mm / min. The measurement results are shown in Table 1.

<Measurement of breaking elongation and breaking strength of adhesive film>
The breaking elongation and breaking strength of each of the adhesive films of Examples 1 to 5 and Comparative Examples 1 to 3 were measured as follows. First, an adhesive film test piece (width 10 mm × length 40 mm) was cut out. A required number of adhesive film test pieces were prepared for each of the adhesive films of Examples 1 to 5 and Comparative Examples 1 to 3. Then, a tensile test is performed on the adhesive film test piece using a tensile tester (trade name "Autograph AGS-50NX", manufactured by Shimadzu Corporation), and the adhesive film test piece stretched at a predetermined tensile speed is obtained. Breaking elongation and breaking strength were measured. In the tensile test, the initial interchuck distance is 10 mm, the temperature condition is 25 ° C., and the tensile speed is 300 mm / min. The measurement results are shown in Table 1.

<Evaluation of dicing tape tearing and splittability>
A 12-inch wafer having a chip size of 10 × 10 mm and a line to be cut (blade half cut; width 20 μm, depth 100 μm) was back grinded to a thickness of 40 μm, and Examples 1 to 5 and Comparative Examples 1 to 3 were used. It was bonded to the dicing tape with an adhesive film prepared in (Wafer bonding temperature: 70 ° C., speed 10 mm / s).
After that, the semiconductor wafer and the adhesive film are cut using a die separating device (trade name "Die Separator DDS2300", manufactured by DISCO Corporation), and the dicing sheet is heat-shrinked to evaluate the tearing and splitting property of the dicing tape. did.
First, the semiconductor wafer was cut with a cool expander unit under the conditions of an expanding temperature of −15 ° C., an expanding speed of 300 mm / sec, and an expanding amount of 14 mm.
Then, the dicing tape tear was evaluated. The tape that did not tear was rated as 〇, and the tape that did occur was rated as X.
Further, those having a breaking rate of 80% or more were evaluated as ◯, those having a breaking rate of 90% or more were evaluated as ⊚, and those having a breaking rate of less than 80% were evaluated as x. The evaluation results are shown in Table 1.

X Dicing tape with adhesive film 10 Dicing tape 11 Base material 12 Adhesive layers 20, 21 Adhesive films W, 30A, 30B Semiconductor wafer 30C Semiconductor wafer divider 30a Modified region 30b Dividing groove 31 Semiconductor chip

Claims (8)

A dicing tape having a laminated structure including a base material and an adhesive layer.
The pressure-sensitive adhesive layer is a dicing tape containing a base polymer having a glass transition temperature of −43 ° C. or lower. The dicing tape according to claim 1, wherein the base polymer is an acrylic polymer. The dicing tape according to claim 1 or 2, wherein the thickness of the pressure-sensitive adhesive layer is 5 μm or more and 40 μm or less. The dicing tape according to any one of claims 1 to 3, wherein the elongation at break at −15 ° C. is 300% or more. The dicing tape according to any one of claims 1 to 4, wherein the breaking strength at −15 ° C. is 15 N / 10 mm or more. The dicing tape according to any one of claims 1 to 5, and the dicing tape.
A dicing tape with an adhesive film, which has an adhesive film that is releasably adhered to the adhesive layer of the dicing tape. The dicing tape with an adhesive film according to claim 6, wherein the adhesive film has a breaking strength at 25 ° C. of 5 N / 10 mm or less and a breaking elongation at 25 ° C. of 100% or less. The dicing tape with an adhesive film according to claim 6 or 7, which is used in a step of cutting a semiconductor wafer.

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