JP2020141107A - Semiconductor back contact film and dicing tape integrated semiconductor back contact film - Google Patents

Abstract

To provide a semiconductor back contact film suitable for suppressing warpage of a semiconductor wafer to which a semiconductor back contact film is attached in a semiconductor device manufacturing process, and a dicing tape integrated semiconductor back contact film.SOLUTION: In a film 10 (semiconductor back contact film) according to the present invention, a difference between a calorific value in a range of 50 to 200°C in the differential scanning calorimetry at a heating rate of 10°C/min and a calorific value in a range of 50 to 200°C in the differential scanning calorimetry a heating rate of 10°C/min after heat treatment under the conditions of 130°C and two hours is 50 J/g or less. A dicing tape integrated semiconductor back contact film X according to the present invention includes a film 10 and a dicing tape 20. The dicing tape 20 has a laminated structure including a base material 21 and an adhesive layer 22. The film 10 is releasably adhered to the adhesive layer 22 of the dicing tape 20.SELECTED DRAWING: Figure 2

Description

The present invention relates to a semiconductor back-adhesive film and a dicing tape-integrated semiconductor back-adhesion film that can be used in the manufacturing process of a semiconductor device.

In the manufacture of a semiconductor device including a semiconductor chip mounted on a flip chip, a film for forming a protective film on the so-called back surface of the chip, that is, a semiconductor back contact film may be used.

The semiconductor back-adhesion film is attached to the back surface of a semiconductor wafer, which is a workpiece, in the manufacturing process of a semiconductor device including a semiconductor chip mounted on a flip chip. After that, for each semiconductor element formed on the wafer that will be fragmented into a semiconductor chip, character information and figures are laser-marked on the surface of the semiconductor back-adhesive film (the surface on the side opposite to the wafer). Various information such as information is printed. The semiconductor wafer is fragmented into chips with the film, for example, by blade dicing. The semiconductor chip with a protective film thus obtained is flip-chip mounted on a predetermined substrate. A technique relating to such a semiconductor back-adhesive film is described in, for example, Patent Document 1 below.

International Publication No. 2014/092200

The process in which the semiconductor wafer in which the semiconductor back-adhesive film is bonded is subjected to in the process of manufacturing the semiconductor device includes a step in which the wafer is placed under relatively high temperature conditions. In a semiconductor wafer in which a conventional semiconductor back-adhesive film is bonded, warpage may occur under the high temperature condition. The warp is more likely to occur as the wafer is thinner.

The present invention has been conceived under the above circumstances, and an object of the present invention is to prevent warpage of a semiconductor wafer to which a semiconductor back-adhesive film is attached in a semiconductor device manufacturing process. It is an object of the present invention to provide a semiconductor back-adhesive film suitable for the present invention and a semiconductor back-adhesion film integrated with a dicing tape.

According to the first aspect of the present invention, a semiconductor back-adhesive film is provided. This semiconductor back-adhesive film has a calorific value in the range of 50 to 200 ° C. (first calorific value) in differential scanning calorimetry at a heating rate of 10 ° C./min, and heat treatment under the conditions of 130 ° C. and 2 hours. After that, the difference from the calorific value (second calorific value) in the range of 50 to 200 ° C. in the differential scanning calorimetry at a heating rate of 10 ° C./min (the first calorific value to the second calorific value). The reduced calorific value) is 50 J / g or less. Such a semiconductor back-adhesive film can be used to obtain a semiconductor chip with a chip back-protecting film in the manufacturing process of a semiconductor device.

The first calorific value in the present invention is a range of 50 to 200 ° C. in differential scanning calorimetry at a heating rate of 10 ° C./min for a semiconductor back-adhesive film that has not been heat-treated under the conditions of 130 ° C. and 2 hours. It is the amount of heat generated inside. The second calorific value in the present invention is within the range of 50 to 200 ° C. in differential scanning calorimetry at a heating rate of 10 ° C./min for a semiconductor back-adhesive film that has been heat-treated under the conditions of 130 ° C. and 2 hours. It is the amount of heat generated in. The configuration in which the difference in the calorific value (the calorific value obtained by subtracting the second calorific value from the first calorific value) of the semiconductor back-adhesive film is 50 J / g or less, the semiconductor wafer to which the film is attached is exposed to a high temperature environment. The present inventors have found that it is suitable for suppressing warpage of the wafer in some cases. For example, it is as shown with Examples and Comparative Examples described later.

Each of the above calorific values in the range of 50 to 200 ° C. in the differential scanning calorimetry of the semiconductor back-adhesive film is mainly occupied by the calorific value (reaction calorific value) due to the reaction between the constituent components in the film. .. The configuration in which the difference between the first calorific value of the semiconductor back-adhesive film that has not undergone the heat treatment and the second calorific value of the semiconductor back-adhesive film that has undergone the heat treatment is 50 J / g or less is the heating. According to the treatment, it means that the reaction corresponding to the calorific value of 50 J / g or less or the reaction heat amount proceeds in the semiconductor back contact film. That is, in the same configuration, the reaction already progresses in the semiconductor back contact film before the heat treatment so that the reaction progressing in the semiconductor back contact film by the heat treatment corresponds to a calorific value of 50 J / g or less. This means that the reaction does not easily proceed in the semiconductor back-adhesive film due to the fact that the film has a high reaction rate or the above heat treatment. Such a configuration in the semiconductor back-adhesive film is suitable for reducing the degree to which the reaction proceeds and shrinks when the film is exposed to a high temperature environment. Therefore, the semiconductor wafer to which the film is attached is placed in a high temperature environment. It is suitable for suppressing warpage of the wafer when exposed to.

As described above, the semiconductor back-adhesive film according to the first aspect of the present invention is suitable for suppressing warpage of the semiconductor wafer to which the semiconductor back-adhesion film is attached in the process of manufacturing a semiconductor device. From the viewpoint of suppressing such warpage, the calorific value difference is preferably 30 J / g or less, more preferably 20 J / g or less, and more preferably 10 J / g or less.

This semiconductor back-adhesion film is a tensile at 150 ° C. measured for a semiconductor back-adhesion film sample piece having a width of 10 mm under the conditions of an initial chuck distance of 20 mm, a frequency of 1 Hz, and a heating rate of 10 ° C. The ratio of the tensile storage elastic modulus at 150 ° C. measured under the elastic modulus measurement conditions after undergoing heat treatment under the conditions of 130 ° C. and 2 hours with respect to the storage elastic modulus is preferably 20 or less, more preferably 10. Below, it is more preferably 5 or less, more preferably 3 or less, and more preferably 1.5 or less. Such a configuration is suitable for reducing the degree to which the film shrinks when exposed to a high temperature environment, and therefore the wafer is warped when the semiconductor wafer to which the film is attached is exposed to a high temperature environment. Suitable for suppressing the occurrence.

The semiconductor back-adhesive film preferably contains an inorganic filler. In this case, the content of the inorganic filler in the semiconductor back-adhesion film is preferably 30% by mass or more, more preferably 40% by mass or more, and more preferably 50% by mass or more. These configurations are preferable in order to suppress the above-mentioned warpage in the semiconductor back-adhesive film or the semiconductor wafer to which the semiconductor back contact film is attached. Further, from the viewpoint of ensuring printability by laser marking in the semiconductor back-adhesive film, the content ratio of the inorganic filler in the semiconductor back-adhesion film is preferably less than 75% by mass.

The glass transition temperature of the semiconductor back-adhesion film is preferably 100 to 200 ° C. Such a configuration is suitable for reducing the stress generated by heat shrinkage in the process of manufacturing a semiconductor device in which the semiconductor back-adhesive film is used, and for stress relaxation by narrowing the highly elastic region.

The semiconductor back-adhesion film preferably contains an epoxy resin having an epoxy equivalent of 150 to 900 g / eq in a proportion of 2 to 20% by mass. Such a configuration is suitable for ensuring good adhesiveness while suppressing the number of cross-linking points in the constituent resin material of the semiconductor back-adhesive film. In the semiconductor back-adhesive film, the smaller the number of cross-linking points in the constituent resin material, the more the shrinkage after the cross-linking reaction during heating tends to be suppressed.

According to the second aspect of the present invention, a dicing tape integrated semiconductor back contact film is provided. This dicing tape-integrated semiconductor back-adhesion film includes a dicing tape and a semiconductor back-adhesion film according to the first side surface of the present invention. The dicing tape has a laminated structure including a base material and an adhesive layer. The semiconductor back-adhesive film is releasably adhered to the adhesive layer of the dicing tape. Such a dicing tape-integrated semiconductor back-adhesive film can be used to obtain a semiconductor chip with a film for forming a chip back surface protective film in the manufacturing process of a semiconductor device.

As described above, the dicing tape-integrated semiconductor back-adhesion film includes the semiconductor back-adhesion film according to the first aspect of the present invention. The semiconductor back-adhesion film integrated with the dicing tape is suitable for suppressing warpage of the semiconductor wafer to which the semiconductor back-adhesion film is bonded in the process of manufacturing the semiconductor device.

It is a top view of the semiconductor back contact film integrated with a dicing tape which concerns on one Embodiment of this invention. It is sectional drawing of the semiconductor back contact film integrated with a dicing tape which concerns on one Embodiment of this invention. A part of the steps in the semiconductor device manufacturing method in which the dicing tape-integrated semiconductor back-adhesion film shown in FIGS. 1 and 2 is used is shown. The steps following the steps shown in FIG. 3 are shown. The steps following the steps shown in FIG. 4 are shown. The steps following the steps shown in FIG. 5 are shown. The steps following the steps shown in FIG. 6 are shown.

1 and 2 show the dicing tape integrated semiconductor back contact film X according to the embodiment of the present invention. FIG. 1 is a plan view of the dicing tape integrated semiconductor back contact film X, and FIG. 2 is a schematic cross-sectional view of the dicing tape integrated semiconductor back contact film X. The dicing tape-integrated semiconductor back-adhesion film X can be used in the process of obtaining a semiconductor chip with a chip back-protecting film, and has a laminated structure including the film 10 and the dicing tape 20. The film 10 is a semiconductor back-adhesion film according to an embodiment of the present invention, and is a film to be bonded to the back surface or the back surface, which is a circuit non-forming surface of a semiconductor wafer as a work. The dicing tape 20 has a laminated structure including a base material 21 and an adhesive layer 22. The pressure-sensitive adhesive layer 22 has a pressure-sensitive adhesive surface 22a on the film 10 side. The film 10 is releasably adhered to the pressure-sensitive adhesive layer 22 or the pressure-sensitive adhesive surface 22a thereof. Further, the dicing tape-integrated semiconductor back-adhesion film X has a disk shape having a size corresponding to a semiconductor wafer as a work.

The film 10, which is a semiconductor back-adhesive film, has a laminated structure including a laser mark layer 11 and an adhesive layer 12. The laser mark layer 11 is located on the dicing tape 20 side of the film 10 and is in close contact with the dicing tape 20 or its adhesive layer 22. The surface of the laser mark layer 11 on the dicing tape 20 side is laser-marked during the manufacturing process of the semiconductor device. In the present embodiment, the laser mark layer 11 is a state in which the thermosetting resin composition layer is already thermoset. The adhesive layer 12 is a non-thermosetting resin composition layer having a work contact surface 12a located on the side where the work is bonded in the film 10 and having thermoplasticity in the present embodiment. The film 10 having a laminated structure including the laser mark layer 11 and the adhesive layer 12 is a non-thermosetting film having substantially no thermosetting property.

The laser mark layer 11 in the film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as a resin component, or is accompanied by a thermosetting functional group capable of reacting with a curing agent to form a bond. It may have a composition containing a thermoplastic resin.

When the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin, the thermosetting resin includes, for example, an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, and a silicone resin. , And thermosetting polyimide resin. The laser mark layer 11 may contain one kind of thermosetting resin, or may contain two or more kinds of thermosetting resins. Since the epoxy resin tends to have a small content of ionic impurities and the like that can cause corrosion of the semiconductor chip to be protected by the back surface protective film formed from the film 10 as described later, the laser mark of the film 10 tends to be small. It is preferable as the thermosetting resin in the layer 11. The laser mark layer 11 contains an epoxy resin having an epoxy equivalent of preferably 150 to 900 g / eq, more preferably 150 to 700 g / eq, in a proportion of 2 to 20% by mass. Further, as a curing agent for developing thermosetting property in the epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy resin, and biphenyl type epoxy. Bifunctional epoxy resins such as resins, naphthalene type epoxy resins, fluorene type epoxy resins, phenol novolac type epoxy resins, orthocresol novolac type epoxy resins, trishydroxyphenylmethane type epoxy resins, and tetraphenylol ethane type epoxy resins and polyfunctional Epoxy resin can be mentioned. Examples of the epoxy resin include a hydantoin type epoxy resin, a trisglycidyl isocyanurate type epoxy resin, and a glycidylamine type epoxy resin. Further, the laser mark layer 11 may contain one kind of epoxy resin, or may contain two or more kinds of epoxy resins.

Phenolic resins can act as hardeners for epoxy resins, such as phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolak resins, nonylphenol novolac resins and the like. Novolac type phenolic resin can be mentioned. Further, examples of the phenol resin include a resol type phenol resin and polyoxystyrene such as polyparaoxystyrene. Particularly preferable as the phenol resin in the laser mark layer 11, is a phenol novolac resin or a phenol aralkyl resin. Further, the laser mark layer 11 may contain one kind of phenol resin or two or more kinds of phenol resins as a curing agent for the epoxy resin.

When the laser mark layer 11 contains an epoxy resin and a phenol resin as a curing agent thereof, the hydroxyl group in the phenol resin is preferably 0.5 to 2.0 equivalents with respect to 1 equivalent of the epoxy groups in the epoxy resin. Both resins are blended at a ratio of preferably 0.8 to 1.2 equivalents. Such a configuration is preferable in order to sufficiently proceed the curing reaction of the epoxy resin and the phenol resin when the laser mark layer 11 is cured.

The content ratio of the total amount of the thermosetting resin in the laser mark layer 11 is preferably 15 to 60% by mass, and more preferably 20 to 55% by mass from the viewpoint of appropriately curing the laser mark layer 11.

The thermoplastic resin in the laser mark layer 11 has, for example, a binder function, and when the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin, the thermoplastic resin is, for example, acrylic. Resin, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, 6 Examples thereof include polyamide resins such as nylon and 6,6-nylon, phenoxy resins, saturated polyester resins such as polyethylene terephthalate and polybutylene terephthalate, polyamideimide resins, and fluororesins. The laser mark layer 11 may contain one kind of thermoplastic resin, or may contain two or more kinds of thermoplastic resins. Acrylic resin is preferable as a thermoplastic resin in the laser mark layer 11 because it has few ionic impurities and high heat resistance.

When the laser mark layer 11 contains an acrylic resin as a thermoplastic resin, the acrylic resin preferably contains the most monomer units derived from the (meth) acrylic acid ester in terms of mass ratio. "(Meta) acrylic" shall mean "acrylic" and / or "methacryl".

Examples of the (meth) acrylic acid ester for forming the monomer unit of the acrylic resin, that is, the (meth) acrylic acid ester which is a constituent monomer of the acrylic resin, include (meth) acrylic acid alkyl ester and (meth) acrylic acid cyclo. Alkyl esters and (meth) acrylic acid aryl esters can be mentioned. Examples of the (meth) acrylic acid alkyl ester include methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, and iso of (meth) acrylic acid. Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester, Examples include octadecyl ester and eicosil ester. Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl ester include phenyl (meth) acrylic acid and benzyl (meth) acrylic acid. As the constituent monomer of the acrylic resin, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. Further, the acrylic resin can be obtained by polymerizing a raw material monomer for forming the acrylic resin. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.

The acrylic resin may be composed of one or two or more other monomers copolymerizable with the (meth) acrylic acid ester, for example, for the purpose of modifying its cohesive force and heat resistance. Examples of such monomers include carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphate group-containing monomers, acrylamide, and acrylonitrile. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, and ( Examples include 8-hydroxyoctyl acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the epoxy group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, and (meth) acryloyloxynaphthalene sulfonic acid. Can be mentioned. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethylacryloyl phosphate.

When the laser mark layer 11 has a composition containing a thermoplastic resin with a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin for forming this thermosetting functional group-containing acrylic resin preferably contains the most monomer unit derived from the (meth) acrylic acid ester in terms of mass ratio. As such a (meth) acrylic acid ester, for example, the same (meth) acrylic acid ester as described above can be used as the constituent monomer of the acrylic resin contained in the laser mark layer 11. The acrylic resin for forming a thermosetting functional group-containing acrylic resin may be one or more types that can be copolymerized with a (meth) acrylic acid ester, for example, because of its cohesiveness and heat resistance modification. It may contain a monomer unit derived from the monomer of. As such a monomer, for example, the above-mentioned monomer can be used as another monomer copolymerizable with the (meth) acrylic acid ester for forming the acrylic resin in the laser mark layer 11. On the other hand, examples of the thermosetting functional group for forming a thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxy group, and an isocyanate group. Of these, a glycidyl group and a carboxy group can be preferably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxy group-containing acrylic resin can be preferably used. Further, a curing agent capable of reacting with the thermosetting functional group is selected according to the type of the thermosetting functional group in the thermosetting functional group-containing acrylic resin. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, the same phenol resin as described above can be used as the curing agent for the epoxy resin.

The composition for forming the laser mark layer 11 contains a thermosetting catalyst in this embodiment. The blending of the thermosetting catalyst into the composition for forming the laser mark layer is preferable in order to sufficiently proceed the curing reaction of the resin component in curing the laser mark layer 11 and to increase the curing reaction rate. Examples of such thermosetting catalysts include imidazole compounds, triphenylphosphine compounds, amine compounds, and trihalogen borane compounds. Examples of the imidazole compound include 2-methylimidazole, 2-undecyl imidazole, 2-heptadecyl imidazole, 1,2-dimethyl imidazole, 2-ethyl-4-methyl imidazole, 2-phenyl imidazole, 2-phenyl-. 4-Methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole Rium trimeritate, 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1') ')]-Ethyl-s-triazine, 2,4-diamino-6- [2'-ethyl-4'-methylimidazolyl- (1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole Can be mentioned. Examples of the triphenylphosphine compound include triphenylphosphine, tri (butylphenyl) phosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, diphenyltrilphosphine, tetraphenylphosphonium bromide, and methyl. Included are triphenylphosphonium bromide, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride, and benzyltriphenylphosphonium chloride. The triphenylphosphine-based compound shall also include a compound having both a triphenylphosphine structure and a triphenylborane structure. Examples of such compounds include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-trilborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphine triphenylborane. Examples of amine compounds include monoethanolamine trifluoroborate and dicyandiamide. Examples of the trihalogen borane compound include trichloroborane. The composition for forming a laser mark layer may contain one kind of thermosetting catalyst, or may contain two or more kinds of thermosetting catalysts.

The laser mark layer 11 may contain a filler. The blending of the filler into the laser mark layer 11 is preferable in order to adjust the physical properties such as the elastic modulus of the laser mark layer 11, the yield point strength, and the elongation at break. Examples of the filler include an inorganic filler and an organic filler. Examples of the constituent materials of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, and nitride. Examples include boron, crystalline silica, and amorphous silica. Examples of the constituent material of the inorganic filler include elemental metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon and graphite. Examples of the constituent materials of the organic filler include polymethyl methacrylate (PMMA), polyimide, polyamideimide, polyetheretherketone, polyetherimide, and polyesterimide. The laser mark layer 11 may contain one kind of filler or may contain two or more kinds of fillers. The filler may have various shapes such as spherical, needle-shaped, and flake-shaped. When the laser mark layer 11 contains a filler, the average particle size of the filler is preferably 30 to 1000 nm, more preferably 40 to 800 nm, and more preferably 50 to 600 nm. That is, the laser mark layer 11 preferably contains a nanofiller. The configuration in which the laser mark layer 11 contains a nanofiller having such a particle size as a filler is suitable for ensuring high breakability of the film 10 to be fragmented. The average particle size of the filler can be determined using, for example, a luminous intensity type particle size distribution meter (trade name “LA-910”, manufactured by HORIBA, Ltd.). When the laser mark layer 11 contains a filler, the content of the filler is preferably 30% by mass or more, more preferably 40% by mass or more, and more preferably 50% by mass or more. The content is preferably less than 75% by mass.

The laser mark layer 11 contains a colorant in this embodiment. The colorant may be a pigment or a dye. Examples of the colorant include a black colorant, a cyan colorant, a magenta colorant, and a yellow colorant. The laser mark layer 11 preferably contains a black colorant in order to realize high visibility of the information stamped on the laser mark layer 11 by the laser marking. Examples of black colorants include azo pigments such as carbon black, graphite, benta black, carbon nanotubes, copper oxide, manganese dioxide, and azomethine azo black, aniline black, perylene black, titanium black, cyanine black, and activated carbon. , Ferrite, magnetite, chromium oxide, iron oxide, molybdenum disulfide, composite oxide-based black dye, anthraquinone-based organic black dye, and azo-based organic black dye. Examples of carbon black include furnace black, channel black, acetylene black, thermal black, and lamp black. Examples of the black colorant include CI Solvent Black 3, 7, 22, 27, 29, 34, 43, and 70. Examples of the black colorant include CI Direct Black 17, 19, 22, 22, 32, 38, 51, and 71. Examples of the black colorant include CI Acid Black 1, 2, 24, 26, 31, 48, 52, 107, 109, 110, 119, and 154. Be done. Examples of the black colorant include CI Dispers Black 1, 3, 10, and 24. Examples of the black colorant include CI Pigment Black 1 and 7. The laser mark layer 11 may contain one kind of colorant, or may contain two or more kinds of colorants. The content of the colorant in the laser mark layer 11 is preferably 0.5% by weight or more, more preferably 1% by weight or more, and more preferably 2% by weight or more. The content is preferably 10% by weight or less, more preferably 8% by weight or less, and more preferably 5% by weight or less. These configurations regarding the colorant content are preferable in order to realize high visibility of the information imprinted on the laser mark layer 11 by the laser marking.

The laser mark layer 11 may contain one kind or two or more kinds of other components, if necessary. Examples of the other components include flame retardants, silane coupling agents, ion trapping agents, and the like.

The thickness of the laser mark layer 11 is, for example, 2 to 100 μm.

The adhesive layer 12 in the film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as a resin component, or may have a composition not containing a thermosetting resin.

When the adhesive layer 12 has a composition containing a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, and silicone resin. And thermosetting polyimide resin. The adhesive layer 12 may contain one type of thermosetting resin, or may contain two or more types of thermosetting resins. Since the epoxy resin tends to have a small content of ionic impurities and the like that can cause corrosion of the semiconductor chip to be protected by the back surface protective film formed from the film 10 as described later, the adhesive layer of the film 10 tends to have a small content. It is preferable as the thermosetting resin in 12. Examples of the epoxy resin in the adhesive layer 12 include those described above as the epoxy resin which is the thermosetting resin when the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin.

The thermoplastic resin in the adhesive layer 12 has, for example, a binder function. As the thermoplastic resin when the adhesive layer 12 has a composition containing a thermosetting resin and a thermoplastic resin, for example, when the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin. Examples of the thermoplastic resin include those described above. The adhesive layer 12 may contain one type of thermoplastic resin, or may contain two or more types of thermoplastic resins. Acrylic resin is preferable as the thermoplastic resin in the adhesive layer 12 because it has few ionic impurities and high heat resistance.

When the adhesive layer 12 contains an acrylic resin as a thermoplastic resin, the acrylic resin preferably contains the most monomer units derived from the (meth) acrylic acid ester in terms of mass ratio. As the (meth) acrylic acid ester for forming a monomer unit of such an acrylic resin, for example, the above-mentioned (meth) as a constituent monomer of the acrylic resin when the laser mark layer 11 contains an acrylic resin as a thermoplastic resin. ) Acrylic acid ester can be used. As the constituent monomer of the acrylic resin in the adhesive layer 12, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. Further, the acrylic resin may contain one kind or two or more kinds of other monomers copolymerizable with the (meth) acrylic acid ester as a constituent monomer, for example, for the purpose of modifying its cohesive force and heat resistance. .. As such a monomer, for example, the above-mentioned monomer can be used as another monomer copolymerizable with the (meth) acrylic acid ester for forming the acrylic resin in the laser mark layer 11.

The adhesive layer 12 may contain a filler. The blending of the filler into the adhesive layer 12 is preferable in order to adjust the physical properties such as the elastic modulus of the adhesive layer 12, the yield point strength, and the elongation at break. Examples of the filler in the adhesive layer 12 include those described above as the filler in the laser mark layer 11. The adhesive layer 12 may contain one kind of filler or may contain two or more kinds of fillers. The filler may have various shapes such as spherical, needle-shaped, and flake-shaped. When the adhesive layer 12 contains a filler, the average particle size of the filler is preferably 30 to 500 nm, more preferably 40 to 400 nm, and more preferably 50 to 300 nm. That is, the adhesive layer 12 preferably contains a nanofiller. The configuration in which the adhesive layer 12 contains nanofillers having such a particle size as a filler prevents or suppresses damage caused by the filler contained in the adhesive layer 12 for the work to be attached or mounted on the film 10. It is also suitable for ensuring high breakability of the film 10 to be fragmented. When the adhesive layer 12 contains a filler, the content of the filler is preferably 30% by mass or more, more preferably 40% by mass or more, and more preferably 50% by mass or more. The content is preferably less than 75% by mass.

The adhesive layer 12 may contain a colorant. Examples of the colorant in the adhesive layer 12 include those described above as the colorant in the laser mark layer 11. In order to secure high contrast between the engraved portion by the laser marking on the laser mark layer 11 side of the film 10 and the other portion and realize good visibility of the engraved information, the adhesive layer 12 is colored black. It is preferable to contain an agent. The adhesive layer 12 may contain one kind of colorant or may contain two or more kinds of colorants. The content of the colorant in the adhesive layer 12 is preferably 0.5% by weight or more, more preferably 1% by weight or more, and more preferably 2% by weight or more. The content is preferably 10% by weight or less, more preferably 8% by weight or less, and more preferably 5% by weight or less. These configurations regarding the colorant content are preferable in order to realize the above-mentioned good visibility of the marking information by laser marking.

The adhesive layer 12 may contain one kind or two or more kinds of other components, if necessary. Examples of the other components include flame retardants, silane coupling agents, ion trapping agents, and the like.

The thickness of the adhesive layer 12 is, for example, 2 to 100 μm.

The film 10, which is a semiconductor back-adhesion film having the above configuration, has a calorific value (first calorific value) in the range of 50 to 200 ° C. in the differential scanning calorimetry at a heating rate of 10 ° C./min and 130 ° C. The difference from the calorific value (second calorific value) in the range of 50 to 200 ° C. in the differential scanning calorimetry at a heating rate of 10 ° C./min after the heat treatment under the conditions of 2 hours (first). The calorific value obtained by subtracting the second calorific value from the calorific value) is 50 J / g or less, preferably 30 J / g or less, more preferably 20 J / g or less, and more preferably 10 J / g or less.

The film 10 has a tensile storage elastic modulus at 150 ° C. measured under the conditions of an initial chuck distance of 20 mm, a frequency of 1 Hz, and a heating rate of 10 ° C./min (modulus modulus measurement condition) for a film 10 sample piece having a width of 10 mm. The ratio of the tensile storage elastic modulus at 150 ° C. measured under the elastic modulus measurement conditions after the heat treatment under the conditions of 130 ° C. and 2 hours is preferably 20 or less, more preferably 10 or less, more preferably. It is 5 or less, more preferably 3 or less, and more preferably 1.5 or less.

The content ratio of the inorganic filler in the entire film 10 is preferably 30% by mass or more, more preferably 40% by mass or more, and more preferably 50% by mass or more. The content of the inorganic filler in the entire film 10 is preferably less than 75% by mass.

When the film 10 has the above-mentioned laser mark layer 11 (cured thermosetting layer), the glass transition temperature of the entire film 10 is preferably 100 to 200 ° C.

The base material 21 of the dicing tape 20 in the dicing tape integrated semiconductor back contact film X is an element that functions as a support in the dicing tape 20 or the dicing tape integrated semiconductor back contact film X, and is, for example, a plastic film. Examples of the constituent materials of the base material 21 include polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyetherimide, polyamide, total aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenyl sulfide, and aramid. , Fluororesin, Cellulosic resin, and Silicone resin. Examples of the polyolefin include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homopolyprolene, polybutene, and polymethylpentene. Examples include ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer. Be done. Examples of polyesters include polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate. The base material 21 may be made of one kind of material or may be made of two or more kinds of materials. The base material 21 may have a single-layer structure or a multi-layer structure. When the base material 21 is made of a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a biaxially stretched film. The base material 21 may be made of one kind of material or may be made of two or more kinds of materials. When the pressure-sensitive adhesive layer 22 on the base material 21 is UV-curable as described later, the base material 21 preferably has UV-transmissibility.

The surface of the base material 21 on the pressure-sensitive adhesive layer 22 side may be subjected to a physical treatment, a chemical treatment, or an undercoating treatment for enhancing the adhesion to the pressure-sensitive adhesive layer 22. Physical treatments include, for example, corona treatment, plasma treatment, sandmat treatment, ozone exposure treatment, flame exposure treatment, high-voltage impact exposure treatment, and ionizing radiation treatment. Examples of the chemical treatment include chromic acid treatment.

The thickness of the base material 21 is preferably 40 μm or more, preferably 50 μm from the viewpoint of ensuring the strength for the base material 21 to function as a support in the dicing tape 20 or the semiconductor back contact film X integrated with the dicing tape. Above, more preferably 60 μm or more. Further, from the viewpoint of realizing appropriate flexibility in the dicing tape 20 or the semiconductor back contact film X integrated with the dicing tape, the thickness of the base material 21 is preferably 200 μm or less, more preferably 180 μm or less, more preferably. Is 150 μm or less.

The pressure-sensitive adhesive layer 22 of the dicing tape 20 contains a pressure-sensitive adhesive. This adhesive may be an adhesive (adhesive strength-reducable adhesive) capable of intentionally reducing the adhesive strength by an external action, or the adhesive strength is almost the same depending on the external action. Alternatively, it may be an adhesive that does not reduce at all (adhesive strength non-reducing type adhesive).

Examples of the adhesive force-reducable adhesive include an adhesive that can be cured by irradiation (radiation-curable adhesive). In the pressure-sensitive adhesive layer 22 of the present embodiment, one type of pressure-reducing pressure-sensitive adhesive may be used, or two or more types of pressure-reducing pressure-sensitive adhesive may be used.

Examples of the radiation-curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 include a type of pressure-sensitive adhesive that is cured by irradiation with electron beam, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays. A curable type pressure-sensitive adhesive (ultraviolet curable pressure-sensitive adhesive) can be particularly preferably used.

The radiation-curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 includes, for example, a base polymer such as an acrylic polymer which is an acrylic pressure-sensitive adhesive, and a radiation-polymerizable product having a functional group such as a radiation-polymerizable carbon-carbon double bond. Examples thereof include an additive-type radiation-curable pressure-sensitive adhesive containing the above-mentioned monomer component and oligomer component.

The acrylic polymer described above preferably contains the most monomer unit derived from the (meth) acrylic acid ester in terms of mass ratio. Examples of the (meth) acrylic acid ester for forming the monomer unit of the acrylic polymer, that is, the (meth) acrylic acid ester which is a constituent monomer of the acrylic polymer, include (meth) acrylic acid alkyl ester and (meth) acrylic. Acid cycloalkyl esters and (meth) acrylic acid aryl esters are mentioned, and more specifically, the same (meth) acrylic acid esters as described above for the acrylic resin in the laser mark layer 11 of the film 10. As the constituent monomer of the acrylic polymer, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. Further, in order to appropriately express the basic properties such as the adhesiveness due to the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 22, the ratio of the (meth) acrylic acid ester in the entire constituent monomers of the acrylic polymer is, for example, 40. It is mass% or more.

Acrylic polymers include monomer units derived from one or more other monomers copolymerizable with (meth) acrylic acid esters, for example due to modification of their cohesiveness and heat resistance. May be good. Such monomers include, for example, carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphate group-containing monomers, acrylamide, and acrylonitrile. Specifically, the above-mentioned ones can be mentioned as other monomers copolymerizable with the (meth) acrylic acid ester for forming the acrylic resin in the laser mark layer 11 of the film 10.

The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as (meth) acrylic acid ester in order to form a crosslinked structure in the polymer skeleton. Such polyfunctional monomers include, for example, hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropanthry (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, polyglycidyl (meth) acrylate, polyester (meth) acrylate, and urethane ( Meta) acrylate can be mentioned. "(Meta) acrylate" shall mean "acrylate" and / or "methacrylate". As the constituent monomer of the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. In order to appropriately express basic properties such as adhesiveness due to the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 22, the proportion of the polyfunctional monomer in the total constituent monomers of the acrylic polymer is, for example, 40% by mass or less. is there.

The acrylic polymer can be obtained by polymerizing a raw material monomer for forming the acrylic polymer. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.

The pressure-sensitive adhesive layer 22 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 22 may contain, for example, an external cross-linking agent in order to increase the average molecular weight of the base polymer such as an acrylic polymer. Examples of the external cross-linking agent for reacting with a base polymer such as an acrylic polymer to form a cross-linked structure include a polyisocyanate compound, an epoxy compound, a polyol compound, an aziridine compound, and a melamine-based cross-linking agent. The content of the external cross-linking agent in the pressure-sensitive adhesive layer 22 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 22 is, for example, 0.1 to 5 parts by mass with respect to 100 parts by mass of the base polymer.

Examples of the above-mentioned radiopolymerizable monomer component for forming a radiation-curable pressure-sensitive adhesive include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol tetra (meth). Examples include acrylates, dipentaerythritol monohydroxypenta (meth) acrylates, dipentaerythritol hexa (meth) acrylates, and 1,4-butanediol di (meth) acrylates. Examples of the above-mentioned radiation-polymerizable oligomer component for forming a radiation-curable pressure-sensitive adhesive include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and have a molecular weight of about 100 to 30,000. The one is suitable. The total content of the radiopolymerizable monomer component and oligomer component in the radiation-curable pressure-sensitive adhesive is determined within a range in which the adhesive strength of the formed pressure-sensitive adhesive layer 22 can be appropriately reduced, and a base polymer such as an acrylic polymer is used. For example, 5 to 500 parts by mass with respect to 100 parts by mass. Further, as the additive-type radiation-curable pressure-sensitive adhesive, for example, those disclosed in JP-A-60-196956 may be used.

The radiation-curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 includes, for example, a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at the end of the polymer main chain in the polymer side chain or the polymer main chain. Also included is an intrinsically curable pressure-sensitive adhesive containing. Such an intrinsically curable pressure-sensitive adhesive is suitable for suppressing an unintended change in adhesive properties over time due to the movement of low molecular weight components in the formed pressure-sensitive adhesive layer 22.

As the base polymer contained in the intrinsic radiation-curable pressure-sensitive adhesive, one having an acrylic polymer as a basic skeleton is preferable. As the acrylic polymer forming such a basic skeleton, the acrylic polymer described above for the additive radiation curable pressure-sensitive adhesive can be adopted. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer having a predetermined functional group (first functional group) is copolymerized to obtain an acrylic polymer. After obtaining the compound, a compound having a predetermined functional group (second functional group) capable of reacting with the first functional group and being bonded to the first functional group and a radiopolymerizable carbon-carbon double bond is obtained from carbon-carbon. Examples thereof include a method of subjecting an acrylic polymer to a condensation reaction or an addition reaction while maintaining the radiation polymerizable property of the double bond.

Examples of the combination of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, and an isocyanate group. And hydroxy groups. Of these combinations, a combination of a hydroxy group and an isocyanate group or a combination of an isocyanate group and a hydroxy group is preferable from the viewpoint of ease of reaction tracking. Further, since it is technically difficult to prepare a polymer having a highly reactive isocyanate group, from the viewpoint of easy preparation or availability of an acrylic polymer, the above-mentioned first functionality on the acrylic polymer side It is more preferable that the group is a hydroxy group and the second functional group is an isocyanate group. In this case, an isocyanate compound having both a radiopolymerizable carbon-carbon double bond and an isocyanate group as a second functional group, that is, a radiopolymerizable unsaturated functional group-containing isocyanate compound includes, for example, methacryloyl isocyanate, 2 Included are methacryloyloxyethyl isocyanate (MOI), and m-isopropenyl-α, α-dimethylbenzyl isocyanate.

The radiation curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, and camphor. Examples include quinone, halogenated ketones, acylphosphinoxides, and acylphosphonates. Examples of α-ketol compounds include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, and 2-methyl-2-hydroxypro. Examples include piophenone and 1-hydroxycyclohexylphenyl ketone. Examples of acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2,2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio)-). Phenyl] -2-morpholinopropane-1 can be mentioned. Examples of the benzoin ether compound include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal-based compound include benzyldimethyl ketal. Examples of the aromatic sulfonyl chloride compound include 2-naphthalene sulfonyl chloride. Examples of the photoactive oxime compound include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Benzophenone compounds include, for example, benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Examples of thioxanthone compounds include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, and 2,4-diisopropyl. Thioxanthone is mentioned. The content of the photopolymerization initiator in the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 22 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of a base polymer such as an acrylic polymer.

Examples of the above-mentioned non-adhesive force-reducing adhesive include pressure-sensitive adhesives. As the pressure-sensitive pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22, for example, an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive using an acrylic polymer as a base polymer can be used. In the pressure-sensitive adhesive layer 22 of the present embodiment, one kind of non-reducing adhesive strength type pressure-sensitive adhesive may be used, or two or more kinds of non-reducing pressure-sensitive pressure-sensitive adhesives may be used.

When the pressure-sensitive adhesive layer 22 contains an acrylic pressure-sensitive adhesive as a pressure-sensitive pressure-sensitive pressure-sensitive adhesive, the acrylic polymer, which is the base polymer of the acrylic pressure-sensitive adhesive, preferably contains a monomer unit derived from (meth) acrylic acid ester in a mass ratio. Including the most. Examples of such an acrylic polymer include the acrylic polymers described above for radiation-curable pressure-sensitive adhesives.

The pressure-sensitive adhesive layer 22 or a pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 22 may contain, in addition to the above-mentioned components, a cross-linking accelerator, a pressure-sensitive adhesive, an anti-aging agent, a colorant such as a pigment or a dye, and the like. The colorant may be a compound that is colored by being irradiated with radiation. Examples of such compounds include leuco dyes.

The thickness of the pressure-sensitive adhesive layer 22 is, for example, 2 to 20 μm. Such a configuration is suitable for balancing the adhesive force of the pressure-sensitive adhesive layer 22 on the film 10 before and after the radiation curing when the pressure-sensitive adhesive layer 22 contains a radiation-curable pressure-sensitive adhesive, for example.

The dicing tape-integrated semiconductor back-adhesion film X having the above configuration can be manufactured, for example, as follows.

In the production of the film 10 in the semiconductor back-adhesion film X integrated with the dicing tape, first, a film forming the laser mark layer 11 and a film forming the adhesive layer 12 are individually produced. The film forming the laser mark layer 11 is formed by applying a resin composition for forming a laser mark layer on a predetermined separator to form a resin composition layer, and then drying and curing the composition layer by heating. By doing so, it can be produced. Examples of the separator include polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, and plastic film and paper surface-coated with a release agent such as a fluorine-based release agent and a long-chain alkyl acrylate-based release agent. Can be mentioned. Examples of the method for applying the resin composition include roll coating, screen coating, and gravure coating. In the production of the film forming the laser mark layer 11, the heating temperature is, for example, 90 to 160 ° C., and the heating time is, for example, 2 to 4 minutes. On the other hand, the film forming the adhesive layer 12 is formed by applying a resin composition for forming an adhesive layer on a predetermined separator to form a resin composition layer, and then drying the composition layer by heating. , Can be made. In the production of the film forming the adhesive layer 12, the heating temperature is, for example, 90 to 150 ° C., and the heating time is, for example, 1 to 2 minutes. As described above, the above-mentioned two types of films can be produced in the form of each having a separator. Then, the exposed surfaces of these films are pasted together. As a result, a film 10 (with separators on both sides) having a laminated structure of the laser mark layer 11 and the adhesive layer 12 is produced.

The dicing tape 20 of the semiconductor back-adhesion film X integrated with the dicing tape can be produced by providing the pressure-sensitive adhesive layer 22 on the prepared base material 21. For example, the resin base material 21 is produced by a film forming method such as a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T die extrusion method, a coextrusion method, or a dry laminating method. can do. The film or the base material 21 after the film formation is subjected to a predetermined surface treatment as needed. In the formation of the pressure-sensitive adhesive layer 22, for example, after preparing the pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer, the composition is first applied on the base material 21 or a predetermined separator to form the pressure-sensitive adhesive composition layer. To form. Examples of the method for applying the pressure-sensitive adhesive composition include roll coating, screen coating, and gravure coating. Next, in this pressure-sensitive adhesive composition layer, it is dried by heating if necessary, and a cross-linking reaction is caused if necessary. The heating temperature is, for example, 80 to 150 ° C., and the heating time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 22 is formed on the separator, the pressure-sensitive adhesive layer 22 with the separator is attached to the base material 21, and then the separator is peeled off. As a result, the dicing tape 20 having a laminated structure of the base material 21 and the pressure-sensitive adhesive layer 22 is produced.

In the production of the semiconductor back contact film X integrated with the dicing tape, the film 10 with the separator is punched into a disk shape having a predetermined diameter, and then the separator is peeled off from the laser mark layer 11 side of the film 10 to form the dicing tape 20. The laser mark layer 11 side of the film 10 is attached to the pressure-sensitive adhesive layer 22 side. The bonding temperature is, for example, 30 to 50 ° C., and the bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf / cm. Next, the dicing tape 20 thus bonded to the film 10 is punched into a disk shape having a predetermined diameter so that the center of the dicing tape 20 and the center of the film 10 coincide with each other. When the pressure-sensitive adhesive layer 22 contains the above-mentioned radiation-curable pressure-sensitive adhesive, the pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays before the bonding, or the base material may be irradiated after the bonding. The pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays from the side of 21. Alternatively, such irradiation may not be performed in the process of manufacturing the dicing tape-integrated semiconductor back-adhesive film X (in this case, the pressure-sensitive adhesive layer 22 is irradiated in the process of using the dicing tape-integrated semiconductor back-adhesive film X. Can be cured). When the pressure-sensitive adhesive layer 22 is an ultraviolet curable type, the integrated amount of ultraviolet irradiation for curing the pressure-sensitive adhesive layer 22 is, for example, 50 to 500 mJ / cm ² .

As described above, the dicing tape-integrated semiconductor back-adhesion film X can be produced. The separator is peeled off from the dicing tape-integrated semiconductor back-adhesion film X when it is used.

The film 10 may have a single-layer structure instead of the multi-layer structure as described above. When the film 10 has a single-layer structure, the film 10 is made of a non-thermosetting resin composition that does not substantially cause thermosetting. Such a film 10 may have a composition containing a thermosetting resin and a thermoplastic resin, or may have a composition not containing a thermosetting resin.

When the single-layered film 10 has a composition containing a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, and polyurethane resin. Examples thereof include silicone resin and thermosetting polyimide resin. The film 10 may contain one kind of thermosetting resin, or may contain two or more kinds of thermosetting resins. Examples of the epoxy resin in the film 10 include those described above as the epoxy resin which is the thermosetting resin when the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin. The single-layer film 10 preferably contains an epoxy resin having an epoxy equivalent of 150 to 900 g / eq in a proportion of 2 to 20% by mass. The epoxy equivalent is preferably 150-700 g / eq. Further, as a curing agent for developing thermosetting property in the epoxy resin, a phenol resin is preferable.

The thermoplastic resin in the single-layer film 10 has, for example, a binder function. The thermoplastic resin when the film 10 has a composition containing a thermosetting resin and a thermoplastic resin is, for example, heat when the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin. Examples of the plastic resin include those described above. The film 10 may contain one kind of thermoplastic resin, or may contain two or more kinds of thermoplastic resins.

When the single-layer film 10 contains an acrylic resin as a thermoplastic resin, the acrylic resin preferably contains the most monomer units derived from the (meth) acrylic acid ester in terms of mass ratio. As the (meth) acrylic acid ester for forming a monomer unit of such an acrylic resin, for example, the above-mentioned (meth) as a constituent monomer of the acrylic resin when the laser mark layer 11 contains an acrylic resin as a thermoplastic resin. ) Acrylic acid ester can be used. As the constituent monomer of the acrylic resin in the film 10, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. Further, the acrylic resin may contain one kind or two or more kinds of other monomers copolymerizable with the (meth) acrylic acid ester as a constituent monomer, for example, for the purpose of modifying its cohesive force and heat resistance. .. As such a monomer, for example, the above-mentioned monomer can be used as another monomer copolymerizable with the (meth) acrylic acid ester for forming the acrylic resin in the laser mark layer 11.

The single-layer film 10 may contain a filler. The blending of the filler into the film 10 is preferable in order to adjust the physical properties such as the elastic modulus of the film 10, the yield point strength, and the elongation at break. Examples of the filler in the film 10 include those described above as the filler in the laser mark layer 11. The film 10 may contain one kind of filler or may contain two or more kinds of fillers. The filler may have various shapes such as spherical, needle-shaped, and flake-shaped. When the film 10 contains a filler, the average particle size of the filler is preferably 30 to 1000 nm, more preferably 40 to 800 nm, and more preferably 50 to 600 nm. That is, the film 10 preferably contains a nanofiller. The configuration in which the film 10 contains a nanofiller having such a particle size as a filler prevents or suppresses damage caused by the filler contained in the film 10 to the work to be attached or mounted on the film 10. It is also suitable for ensuring high breakability of the film 10 to be fragmented. When the film 10 contains a filler, the content of the filler is preferably 30% by mass or more, more preferably 40% by mass or more, and more preferably 50% by mass or more. The content is preferably less than 75% by mass.

When the film 10 has a single layer structure, the film 10 contains a colorant. Examples of the colorant in the film 10 include those described above as the colorant in the laser mark layer 11. In order to secure high contrast between the engraved portion by the laser marking on the laser mark layer 11 side of the film 10 and the other portion and realize good visibility of the engraved information, the film 10 is a black colorant. Is preferably contained. The film 10 may contain one kind of colorant, or may contain two or more kinds of colorants. The content of the colorant in the film 10 is preferably 0.5% by weight or more, more preferably 1% by weight or more, and more preferably 2% by weight or more. The content is preferably 10% by weight or less, more preferably 8% by weight or less, and more preferably 5% by weight or less. These configurations regarding the colorant content are preferable in order to realize the above-mentioned good visibility of the marking information by laser marking.

The single-layer film 10 may contain one kind or two or more kinds of other components, if necessary. Examples of the other components include flame retardants, silane coupling agents, ion trapping agents, and the like.

When the film 10 has a single-layer structure, the thickness of the film 10 is, for example, 2 to 100 μm.

3 to 7 show an example of a semiconductor device manufacturing method in which the above-mentioned semiconductor back-adhesion film X integrated with a dicing tape is used.

In the present semiconductor device manufacturing method, first, as shown in FIGS. 3A and 3B, the wafer W is thinned by grinding (wafer thinning step). The grinding process can be performed using a grinding device equipped with a grinding wheel. The wafer W is a semiconductor wafer and has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been built on the side of the first surface Wa of the wafer W, and the wiring structure and the like (not shown) required for the semiconductor element have already been formed on the first surface Wa. ing. The second surface Wb is a so-called back surface or back surface. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the first surface Wa side of the wafer W, the wafer W is held in a state where the wafer W is held by the wafer processing tape T1 and the wafer W has a predetermined thickness. Up to this point, the second surface Wb is ground to obtain a thinned wafer 30.

Next, as shown in FIG. 4A, the dicing tape-integrated semiconductor back-adhesion film X is attached to the wafer 30 and the ring frame 41. Specifically, the film 10 of the dicing tape-integrated semiconductor back-adhesion film X is attached to the wafer 30 to the wafer 30 held by the wafer processing tape T1 and the ring frame 41 arranged so as to surround the wafer 30. At the same time, the dicing tape-integrated semiconductor back-adhesion film X is attached so that the dicing tape 20 or the adhesive layer 22 thereof is attached to the ring frame 41. Then, as shown in FIG. 4B, the wafer processing tape T1 is peeled off from the wafer 30. After that, a baking step for improving the wettability and adhesion of the film 10 to the wafer 30 may be performed before, for example, the dicing step described later. In the baking step, it is preferable to heat the dicing tape-integrated semiconductor back-adhesion film X or the film 10 holding the wafer 30 at a temperature of 100 ° C. or lower within several hours.

Next, the laser mark layer 11 of the film 10 in the dicing tape-integrated semiconductor back-adhesion film X is laser-marked by irradiating the laser mark layer 11 through the dicing tape 20 (that is, from the side of the base material 21 of the dicing tape 20). (Laser marking process). By this laser marking, various information such as character information and graphic information is engraved on each semiconductor element that is later separated into semiconductor chips. In this step, in one laser marking process, it is possible to collectively and efficiently perform laser marking on a large number of semiconductor elements in the wafer 30. Examples of the laser used in this step include a gas laser and a solid-state laser. Examples of the gas laser include a carbon dioxide gas laser (CO ₂ laser) and an excimer laser. Examples of the solid-state laser include an Nd: YAG laser.

Next, the dicing tape-integrated semiconductor back-adhesion film X with the wafer 30 and the ring frame 41 is held by the holder 42 of the device via the ring frame 41, and then the dicing device is as shown in FIG. Cutting is performed by the dicing blade provided in the above (dicing process). In FIG. 5, the cutting portion is schematically represented by a thick line. In this step, the wafer 30 is fragmented into chips 31, and at the same time, the film 10 of the dicing tape-integrated semiconductor back contact film X is cut into small pieces of film 10'. As a result, the chip 31 with the film 10'for forming the chip back surface protective film, that is, the chip 31 with the film 10'is obtained.

When the pressure-sensitive adhesive layer 22 of the dicing tape 20 contains a radiation-curable pressure-sensitive adhesive, instead of the above-mentioned irradiation in the manufacturing process of the semiconductor back-adhesion film X integrated with the dicing tape, after the above-mentioned dicing step, The pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays from the side of the base material 21. The integrated irradiation light amount is, for example, 50 to 500 mJ / cm ² . In the dicing tape-integrated semiconductor back-adhesive film X, the region where the pressure-sensitive adhesive layer 22 is irradiated as a measure for reducing the adhesive strength is, for example, as shown in FIG. 2, the peripheral edge of the pressure-sensitive adhesive layer 22 in the film 10 bonding region. Area R excluding the part.

Next, a cleaning step of cleaning the chip 31 side of the dicing tape 20 with the chip 31 with the film 10'using a cleaning liquid such as water, and an expanding step for widening the separation distance between the chips 31 with the film 10'are performed. After passing through as necessary, the chip 31 with the film 10'is picked up from the dicing tape 20 (pickup step), as shown in FIG. For example, the dicing tape integrated semiconductor back contact film X with the ring frame 41 is held by the holding tool 43 of the apparatus via the ring frame 41, and then the dicing tape 20 is attached to the chip 31 with the film 10'to be picked up. The pin member 44 of the pickup mechanism is raised on the lower side of the drawing, pushed up through the dicing tape 20, and then sucked and held by the suction jig 45. In the pick-up step, the push-up speed of the pin member 44 is, for example, 1 to 100 mm / sec, and the push-up amount of the pin member 44 is, for example, 50 to 3000 μm.

Next, as shown in FIG. 7, the chip 31 with the film 10'is flip-chip mounted on the mounting substrate 51. Examples of the mounting board 51 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring board. The chip 31 is electrically connected to the mounting substrate 51 via a bump 52. Specifically, the electrode pad (not shown) of the chip 31 on the circuit forming surface side and the terminal portion (not shown) of the mounting substrate 51 are electrically connected via the bump 52. The bump 52 is, for example, a solder bump. Further, a thermosetting underfill agent 53 is interposed between the chip 31 and the mounting substrate 51.

As described above, the semiconductor device can be manufactured by using the semiconductor back contact film X integrated with the dicing tape.

As described above, the film 10, which is the semiconductor back-adhesive film included in the dicing tape-integrated semiconductor back-adhesion film X, generates heat in the range of 50 to 200 ° C. in the differential scanning calorimetry at a heating rate of 10 ° C./min. Amount (first calorific value) and calorific value in the range of 50 to 200 ° C. in differential scanning calorimetry at a heating rate of 10 ° C./min after heat treatment under the conditions of 130 ° C. and 2 hours. The difference from the second calorific value) (the calorific value obtained by subtracting the second calorific value from the first calorific value) is 50 J / g or less. The first calorific value is the calorific value in the range of 50 to 200 ° C. in the differential scanning calorimetry at a heating rate of 10 ° C./min for the film 10 that has not been heat-treated under the conditions of 130 ° C. and 2 hours. Is. The second calorific value is the calorific value in the range of 50 to 200 ° C. in the differential scanning calorimetry at a heating rate of 10 ° C./min for the film 10 that has been heat-treated under the conditions of 130 ° C. and 2 hours. is there. The configuration in which the difference in the calorific value (the calorific value obtained by subtracting the second calorific value from the first calorific value) in the film 10 is 50 J / g or less is a configuration in which the semiconductor wafer to which the film is attached is exposed to a high temperature environment. The present inventors have found that it is suitable for suppressing warpage of the wafer. For example, it is as shown with Examples and Comparative Examples described later.

The calorific value in the range of 50 to 200 ° C. in the differential scanning calorimetry of the film 10 is mainly occupied by the calorific value (reaction calorific value) due to the reaction between the constituent components in the film. According to the heat treatment, the difference between the first calorific value of the film 10 not subjected to the heat treatment and the second calorific value of the film 10 subjected to the heat treatment is 50 J / g or less, according to the heat treatment. It means that the reaction corresponding to the calorific value or the reaction heat amount of / g or less proceeds in the film 10. That is, in the same configuration, the reaction has already proceeded in the film 10 before the heat treatment so that the reaction progressing in the film 10 by the heat treatment corresponds to a calorific value of 50 J / g or less (the said). It means that the reaction rate in the film is high) or the reaction does not easily proceed in the film 10 depending on the above heat treatment. Such a configuration in the film 10 is suitable for reducing the degree to which the reaction proceeds and shrinks when the film 10 is exposed to a high temperature environment, and therefore, the semiconductor wafer to which the film is attached is placed in a high temperature environment. It is suitable for suppressing warpage of the wafer when exposed. In the film 10 including the cured thermosetting layer (laser mark layer 11 in the above-described embodiment), the high reaction rate of the film 10 which is a semiconductor back-adhesive film can be increased by, for example, the thermosetting catalyst (thermosetting catalyst) in the thermosetting layer. This can be done by adjusting the blending amount of the reaction accelerator) and adjusting the heating temperature and heating time for thermosetting during the production of the film 10.

As described above, the film 10 included in the dicing tape-integrated semiconductor back-adhesion film X is suitable for suppressing warpage of the semiconductor wafer to which the film 10 is attached in the semiconductor device manufacturing process. From the viewpoint of suppressing such warpage, the calorific value difference is preferably 30 J / g or less, more preferably 20 J / g or less, and more preferably 10 J / g or less.

As described above, the film 10 is a tension at 150 ° C. measured for a film 10 sample piece having a width of 10 mm under the conditions of an initial chuck distance of 20 m, a frequency of 1 Hz, and a heating rate of 10 ° C./min (modulus modulus measurement condition). The ratio of the tensile storage elastic modulus at 150 ° C. measured under the elastic modulus measurement conditions after undergoing heat treatment under the conditions of 130 ° C. and 2 hours with respect to the storage elastic modulus is preferably 20 or less, more preferably 10. Below, it is more preferably 5 or less, more preferably 3 or less, and more preferably 1.5 or less. Such a configuration is suitable for reducing the degree to which the film 10 shrinks when exposed to a high temperature environment, and therefore, when the semiconductor wafer to which the film 10 is attached is exposed to a high temperature environment, the wafer is warped. Suitable for suppressing the occurrence.

As described above, the content of the inorganic filler in the entire film 10 is preferably 30% by mass or more, more preferably 40% by mass or more, and more preferably 50% by mass or more. Such a configuration is preferable in order to suppress the above-mentioned warpage in the film 10 or the semiconductor wafer to which the film 10 is bonded.

As described above, the content of the inorganic filler in the entire film 10 is preferably less than 75% by mass. Such a configuration is suitable for ensuring printability by laser marking on the film 10.

When the film 10 of the semiconductor back-adhesion film X integrated with the dicing tape has the above-mentioned laser mark layer 11 (cured thermosetting layer), the glass transition temperature of the entire film 10 is preferably 100 to 100 as described above. It is 200 ° C. Such a configuration is suitable for reducing the stress generated by heat shrinkage in the film 10 and relaxing the stress by narrowing the highly elastic region.

Further, as described above, the film 10 in the dicing tape-integrated semiconductor back-adhesion film X preferably contains an epoxy resin having an epoxy equivalent of 150 to 900 g / eq in a proportion of 2 to 20% by mass, and the epoxy equivalent is It is preferably 150 to 700 g / eq. Such a structure is suitable for ensuring good adhesiveness in the film 10 while suppressing the number of cross-linking points in the constituent resin material. In the film 10, the smaller the number of cross-linking points in the constituent resin material, the more the shrinkage after the cross-linking reaction during heating tends to be suppressed.

[Example 1]
In the production of the semiconductor back contact film of Example 1, first, the first film forming the laser mark layer (LM layer) and the second film forming the adhesive layer (AH layer) are individually separated. Made in.

In the production of the first film, first, 7 parts by mass of the first epoxy resin (trade name "JER YL980", manufactured by Mitsubishi Chemical Corporation) and the second epoxy resin (trade name "KI-3000-4", Toto Kasei) 7 parts by mass of phenol resin (trade name "MEH-7851SS", manufactured by Meiwa Kasei Co., Ltd.), acrylic resin (trade name "Taisan Resin SG-P3", manufactured by Nagase ChemteX Corporation) ) 15 parts by mass, filler (trade name "SO-25R", manufactured by Admatex Co., Ltd.), 50 parts by mass, and thermosetting catalyst (trade name "Curesol 2PHZ", manufactured by Shikoku Kasei Kogyo Co., Ltd.) Two parts by mass of a black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied onto the silicone release-treated surface of the PET separator having the surface subjected to the silicone release treatment using an applicator to form a resin composition layer. Next, this composition layer is heated at 130 ° C. for 2 minutes to be dried to form a first film (a laser mark layer which is a cured thermosetting layer) having a thickness of 15 μm on a PET separator. Film) was produced.

In the preparation of the second film, first, 7.5 parts by mass of the first epoxy resin (trade name "JER YL980", manufactured by Mitsubishi Chemical Corporation) and the second epoxy resin (trade name "KI-3000-4"), 7.5 parts by mass of Toto Kasei Co., Ltd., 16.5 parts by mass of phenol resin (trade name "MEH-7851SS", manufactured by Meiwa Kasei Co., Ltd.), and acrylic resin (trade name "Taisan Resin SG-P3", 16.5 parts by mass of Nagase ChemteX Corporation, 50 parts by mass of filler (trade name "SO-25R", manufactured by Admatex Co., Ltd.), and black dye (trade name "OIL BLACK BS", Orient Chemical Industry Co., Ltd.) (Manufactured by Co., Ltd.) 2 parts by mass was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied onto the silicone release-treated surface of the PET separator having the surface subjected to the silicone release treatment using an applicator to form a resin composition layer. Next, this composition layer was heated at 130 ° C. for 2 minutes and dried to prepare a second film (a film forming a non-thermosetting adhesive layer) having a thickness of 10 μm on a PET separator. ..

Then, the first film on the PET separator and the second film on the PET separator prepared as described above were bonded together using a laminator. Specifically, the exposed surfaces of the first and second films were bonded to each other under the conditions of a temperature of 100 ° C. and a pressure of 0.6 MPa. As described above, the semiconductor back contact film of Example 1 was produced. The composition of each film in Example 1 and each of the Examples and Comparative Examples described later is shown in Table 1 (in Table 1, the composition of each layer is represented by the mass ratio of the components).

[Example 2]
In the production of the semiconductor back-adhesive film of Example 2, first, 7.5 parts by mass of the first epoxy resin (trade name "JER YL980", manufactured by Mitsubishi Chemical Corporation) and the second epoxy resin (trade name "KI-") are produced. 3000-4 ", manufactured by Toto Kasei Co., Ltd. 7.5 parts by mass, phenol resin (trade name" MEH-7851SS ", manufactured by Meiwa Kasei Co., Ltd.) 16.5 parts by mass, and acrylic resin (trade name" Teisan Resin " SG-P3 ", manufactured by Nagase ChemteX Corporation) 16.5 parts by mass, filler (trade name" SO-25R ", manufactured by Admatex Co., Ltd.) 50 parts by mass, and black dye (trade name" OIL BLACK BS " , 2 parts by mass of Orient Chemical Industry Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied onto the silicone release-treated surface of the PET separator having the surface subjected to the silicone release treatment using an applicator to form a resin composition layer. Next, the composition layer was heated at 130 ° C. for 2 minutes to dry. As described above, a semiconductor back-adhesive film (non-thermosetting single-layer film) of Example 2 having a thickness of 25 μm was produced on the PET separator.

[Example 3]
In the production of the semiconductor back contact film of Example 3, first, 25 parts by mass of a phenol resin (trade name "MEH-7851SS", manufactured by Meiwa Kasei Co., Ltd.) and an acrylic resin (trade name "Taisan Resin SG-P3"), 13 parts by mass of Nagase Chemtex Co., Ltd., 60 parts by mass of filler (trade name "SO-25R", manufactured by Admatex Co., Ltd.), and black dye (trade name "OIL BLACK BS", Orient Chemical Industry Co., Ltd.) (Manufactured by) 2 parts by mass was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied onto the silicone release-treated surface of the PET separator having the surface subjected to the silicone release treatment using an applicator to form a resin composition layer. Next, the composition layer was heated at 130 ° C. for 2 minutes to dry. As described above, a semiconductor back-adhesive film (non-thermosetting single-layer film) of Example 3 having a thickness of 25 μm was produced on the PET separator.

[Example 4]
The amount of the first epoxy resin (trade name "JER YL980") was changed to 3.5 parts by mass instead of 7.5 parts by mass, and the amount of the second epoxy resin (trade name "KI-3000-4") was mixed. The amount was changed to 3.5 parts by mass instead of 7.5 parts by mass, the amount of phenol resin (trade name "MEH-7851SS") was changed to 8 parts by mass instead of 16.5 parts by mass, and acrylic. The amount of resin (trade name "Taisan Resin SG-P3") was changed to 8 parts by mass instead of 16.5 parts by mass, and the amount of filler (trade name "SO-25R") was 50 parts by mass. In the same manner as the semiconductor back-adhesive film of Example 2, the semiconductor back-adhesion film of Example 4 (a non-thermo-curable single-layer film having a thickness of 25 μm) was used in the same manner as in the case of the semiconductor back-adhesion film of Example 2, except that the mass was 75 parts by mass. Made.

[Comparative Example 1]
Except for the fact that the blending amount of the thermosetting catalyst (trade name "Curesol 2PHZ") was changed to 0.5 parts by mass instead of 4 parts by mass, and the film thickness was changed to 25 μm instead of 12.5 μm. In the same manner as the first film of Example 1, the semiconductor back-adhesive film of Comparative Example 1 (a cured thermosetting single-layer film) was produced.

<Difference in calorific value>
For each semiconductor back contact film of Examples 1 to 4 and Comparative Example 1, a differential scanning calorimeter (trade name "DSC Q2000", TA Instruments Co., Ltd.) by differential scanning calorimetry performed using the calorific value Q ₁ Examined. Further, the semiconductor back-adhesive films of the composite films of Examples 1 to 4 and Comparative Example 1 were heat-treated (standing at 130 ° C. for 2 hours in a constant temperature bath), and then a differential scanning calorimeter (commodity). the name "DSC Q2000", by differential scanning calorimetry carried out using a TA Instruments Inc.), it was examined calorific value Q _2. In each differential scanning calorimetry, the measurement environment was a nitrogen atmosphere, the measurement temperature range was -30 ° C to 300 ° C, and the temperature rise rate was 10 ° C / min. Then, with respect to the exothermic peak appearing in the range of 50 to 200 ° C. in the DSC chart obtained by each measurement, the integrated value of the calorific value above the baseline at 50 to 200 ° C. of the chart is used as the calorific value (J / g). I asked. Table 1 shows the calorific value Q ₁ (J / g), the calorific value Q ₂ (J / g), and the calorific value difference Q ₁ −Q ₂ (J / g) for each semiconductor back contact film.

[Tensile storage elastic modulus]
150 ° C. for each of the semiconductor back-adhesive films of Examples 1 to 4 and Comparative Example 1 based on the dynamic viscoelasticity measurement performed using a dynamic viscoelasticity measuring device (trade name “RSA3”, manufactured by TA Instruments). The tensile storage elastic modulus E ₁ was determined. Further, after each of the semiconductor back-adhesive films of Examples 1 to 4 and Comparative Example 1 was heat-treated (standing at 130 ° C. for 2 hours in a constant temperature bath), a dynamic viscoelasticity measuring device (trade name). The tensile storage elastic modulus E ₂ at 150 ° C. was determined based on the dynamic viscoelasticity measurement performed using "RSA3" (manufactured by TA Instruments). The sample piece (width 10 mm × length 30 mm) to be used for measurement was prepared by cutting out from a semiconductor back-adhesion film that had not undergone heat treatment or a semiconductor back-adhesion film that had undergone heat treatment. In each measurement, the initial distance between the chucks for holding the sample piece is 20 mm, the measurement mode is the tension mode, the measurement environment is a nitrogen atmosphere, the measurement temperature range is 0 ° C to 200 ° C, and the frequency is 1 Hz. The dynamic strain was set to 0.05%, and the temperature rising rate was set to 10 ° C./min. Table 1 shows the tensile storage elastic modulus E ₁ (MPa), the tensile storage elastic modulus E ₂ (MPa), and the ratio E ₂ / E ₁ of these tensile storage elastic moduli for each semiconductor back-adhesion film.

<Glass-transition temperature>
The glass transition temperature of each semiconductor back-adhesive film of Example 1 and Comparative Example 1 was examined by differential scanning calorimetry performed using a differential scanning calorimeter (trade name "DSC Q2000", manufactured by TA Instruments). In each differential scanning calorimetry, the measurement environment was a nitrogen atmosphere, the measurement temperature range was -30 ° C to 300 ° C, and the temperature rise rate was 10 ° C / min. Table 1 shows the glass transition temperature Tg (° C.) of each semiconductor back-adhesion film of Example 1 and Comparative Example 1.

<Wafer warp amount>
The degree to which warpage was induced when each of the semiconductor back-adhesive films of Examples 1 to 4 and Comparative Example 1 was subjected to a heating test together with a silicon wafer was examined. Specifically, it is as follows.

First, the semiconductor back-adhesive film was bonded to a silicon wafer (thickness 100 μm, diameter 300 mm). Next, the silicon wafer with the semiconductor back-adhesion film was heated at 130 ° C. for 2 hours in a constant temperature bath (heating test). The wafer with the semiconductor back-adhesion film that had undergone this heating test was placed on a laboratory table having a horizontal table surface in such a manner that the semiconductor back-adhesion film was located on the upper surface side, and allowed to stand for 2 hours. After that, the distance between the highest position from the table surface and the table surface on the table facing surface on the peripheral edge of the wafer was measured with a ruler. The measured value was defined as the amount of warpage (mm). The measured values are listed in Table 1.

<Evaluation of printability>
The printability of each of the semiconductor back contact films of Examples 1 to 4 and Comparative Example 1 was examined as follows. First, using a laser marking device (trade name "MD-S9920", KEYENCE Co., Ltd.), the semiconductor back-adhesion film was irradiated with a laser to perform printing by laser marking (semiconductor back-adhesion of Example 1). For the film, printing was performed on the surface of the laser mark layer). In this laser marking, the laser power is 0.23 W, the marking speed is 300 mm / sec, and the laser frequency is 10 kHz. Next, using a microscope (trade name "Digital Microscope VHX-500", manufactured by KEYENCE CORPORATION), the portion printed by laser marking was observed (bright field observation). The characters (printed) engraved by laser marking have clear contrast and are easily visible (first standard), and the maximum depth of the engraved characters is 1 μm or more (second standard). When both of the above are satisfied, the printability is evaluated as "good", and when at least one of the first and second criteria is not satisfied, the printability is evaluated as "poor". The evaluation results are listed in Table 1.

X Dicing tape integrated semiconductor back contact film 10,10'film (semiconductor back contact film)
11 Laser mark layer 12 Adhesive layer 20 Dicing tape 21 Base material 22 Adhesive layer W, 30 Wafer 31 Chip

Claims (7)

The calorific value in the range of 50 to 200 ° C. in the differential scanning calorimetry at a heating rate of 10 ° C./min and the heating rate of 10 ° C./min after heat treatment under the conditions of 130 ° C. and 2 hours. A semiconductor back-adhesion film in which the difference from the calorific value in the range of 50 to 200 ° C. in the differential scanning calorimetry is 50 J / g or less. For a semiconductor back-adhesive film sample piece with a width of 10 mm, the tensile storage elastic modulus at 150 ° C. measured under the conditions of an initial chuck distance of 20 mm, a frequency of 1 Hz and a heating rate of 10 ° C./min, under conditions of 130 ° C. and 2 hours. After the heat treatment, the ratio of the tensile storage elastic modulus at 150 ° C. measured under the conditions of an initial chuck distance of 20 mm, a frequency of 1 Hz and a heating rate of 10 ° C./min for a semiconductor back-adhesion film sample piece having a width of 10 mm. , 20 or less, the semiconductor back contact film according to claim 1. The semiconductor back-adhesion film according to claim 1 or 2, which contains an inorganic filler in a proportion of 30% by mass or more. The semiconductor back-adhesion film according to any one of claims 1 to 3, which contains an inorganic filler in a proportion of 75% by mass or less. The semiconductor back-adhesion film according to any one of claims 1 to 4, wherein the glass transition temperature is 100 to 200 ° C. The semiconductor back-adhesion film according to any one of claims 1 to 5, which contains an epoxy resin having an epoxy equivalent of 150 to 900 g / eq in a proportion of 2 to 20% by mass. A dicing tape having a laminated structure including a base material and an adhesive layer,
A semiconductor back-adhesion film integrated with a dicing tape, comprising the semiconductor back-adhesion film according to any one of claims 1 to 6, which is detachably adhered to the adhesive layer of the dicing tape.

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