JP6396189B2 - Conductive film adhesive, dicing tape with film adhesive, and method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to a conductive film adhesive, a dicing tape with a film adhesive, and a method for manufacturing a semiconductor device.

  In the manufacture of semiconductor devices, a method for bonding a semiconductor element to an adherend such as a metal lead frame (so-called die bonding method) has started from a conventional gold-silicon eutectic, and has changed to a method using solder or resin paste. At present, a conductive resin paste is sometimes used.

  However, the method using a resin paste has a problem that the conductivity is reduced by voids, the thickness of the resin paste is non-uniform, and the pad is contaminated by the protrusion of the resin paste. In order to solve these problems, a film adhesive containing a polyimide resin may be used instead of the resin paste (see, for example, Patent Document 1).

  A film-like adhesive containing an acrylic resin is also known. For example, Patent Document 2 describes a technique for improving flexibility and reducing thermal damage such as a lead frame by using an acrylic acid copolymer having a glass transition temperature of −10 ° C. to 50 ° C. .

  In recent years, power semiconductor devices that control and supply electric power have become widespread. Since current always flows through the power semiconductor device, the amount of heat generated is large. Therefore, it is desirable that the conductive adhesive used for the power semiconductor device has high heat dissipation and low electrical resistivity.

  Regarding a die bonding method using a film adhesive, as shown in FIG. 10, a step of pressure bonding a die bonding chip 541 including a film adhesive 503 and a semiconductor chip 505 to an adherend 506 at about 100 ° C. to about 150 ° C. A method including the above is known.

Japanese Patent Application Laid-Open No. 6-145639 Japanese Patent No. 4137827

  However, as a result of intensive studies by the present inventors, it is found that it is sometimes difficult to soften the film adhesive 503 to such an extent that it can be adhered to the adherend 506 if the heat dissipation of the film adhesive 503 is high. It was.

  This invention solves the said subject, and it aims at providing the dicing tape with a conductive film adhesive and a film adhesive which have the heat dissipation after hardening higher than the heat dissipation before hardening.

  The present invention relates to a conductive film adhesive having a ratio of the first thermal conductivity to the second thermal conductivity (first thermal conductivity / second thermal conductivity) of 2.0 or more. The first thermal conductivity is the thermal conductivity of a cured product obtained by curing the conductive film adhesive of the present invention by heating. The second thermal conductivity is the thermal conductivity before heating.

  The first thermal conductivity is preferably 1.7 W / m · K or more.

  The conductive film adhesive of the present invention preferably contains conductive particles. The conductive particles preferably include flaky metal particles and sinterable metal particles that are at least partially sintered at 200 ° C. For this reason, it is possible to thicken a heat conduction path | route by hardening the film adhesive of this invention, and can improve heat dissipation. The content of the sinterable metal particles in 100% by weight of the conductive particles is preferably 5% by weight to 50% by weight.

  The conductive film adhesive of the present invention contains a resin component. The resin component preferably contains a thermoplastic resin or a thermosetting resin. The conductive film adhesive of the present invention preferably further contains a curing agent.

  The use of the conductive film adhesive of the present invention is preferably a die bond application.

  The present invention also relates to a dicing tape with a film adhesive comprising a dicing tape and a conductive film adhesive disposed on the dicing tape. A dicing tape is provided with the adhesive layer arrange | positioned on a base material and a base material.

  The present invention also relates to a method for manufacturing a semiconductor device including a step of pressure-bonding a chip for die bonding including a conductive film adhesive and a semiconductor chip disposed on the conductive film adhesive to an adherend.

It is a schematic sectional drawing of a film adhesive. It is a schematic sectional drawing of a dicing tape with a film adhesive. It is a schematic sectional drawing of the dicing tape with a film adhesive which concerns on a modification. It is sectional drawing which shows the outline of a mode that the semiconductor wafer has been arrange | positioned on the dicing tape with a film adhesive. It is a schematic sectional drawing of the chip | tip for die bonding. It is a schematic sectional drawing of a to-be-adhered body with a semiconductor chip. It is a schematic sectional drawing of a semiconductor device. It is a top view of an evaluation board. It is a top view of a test board. It is a schematic sectional drawing of a die bonding process.

  The present invention will be described in detail below with reference to embodiments, but the present invention is not limited only to these embodiments.

[Film adhesive 3]
As shown in FIG. 1, the film adhesive 3 forms a film. The film adhesive 3 has conductivity and thermosetting.

  The film adhesive 3 further has the following properties. That is, the ratio of the first thermal conductivity of the cured product obtained by curing by heating to the second thermal conductivity before heating (first thermal conductivity / second thermal conductivity) is 2.0 or more. is there. Preferably it is 2.5 or more. The upper limit of the value of the ratio of the first thermal conductivity to the second thermal conductivity is not particularly limited, and is, for example, 5.0.

  The first thermal conductivity is preferably 1.7 W / m · K or more, more preferably 2.0 W / m · K or more, still more preferably 2.5 W / m · K or more, and particularly preferably 3.0 W / m. -K or more. The upper limit of the first thermal conductivity is, for example, 20 W / m · K, 30 W / m · K, or the like.

  The second thermal conductivity is preferably 0.3 W / m · K or more, more preferably 0.5 W / m · K or more. On the other hand, the second thermal conductivity is preferably 15 W / m · K or less, more preferably 10 W / m · K or less.

  The first thermal conductivity and the second thermal conductivity are measured by the method described in the examples.

  Preferably, the film adhesive 3 further has the following properties. That is, the value of the ratio of the first electrical resistivity of the cured product obtained by curing by heating to the second electrical resistivity before heating (first electrical resistivity / second electrical resistivity) is preferably 0.00. 01 or more, more preferably 0.015 or more. The upper limit of the value of the ratio of the first electrical resistivity to the second electrical resistivity is, for example, 0.95, 0.9, and the like.

The first electrical resistivity is preferably 5 × 10 ⁻⁵ Ω · m or less, more preferably 3 × 10 ⁻⁵ Ω · m or less. The lower limit of the first electrical resistivity is, for example, 1 × 10 ⁻⁷ Ω · m.

The second electrical resistivity is preferably 5 × 10 ⁻⁵ Ω · m or less, more preferably 4 × 10 ⁻⁵ Ω · m or less. The lower limit of the second electrical resistivity is, for example, 3 × 10 ⁻⁷ Ω · m.

  The first electrical resistivity and the second electrical resistivity are measured by the method described in the examples.

  Preferably, the film adhesive 3 further has the following properties. That is, the storage elastic modulus at 175 ° C. of the cured product is preferably 50 MPa or more. On the other hand, the storage elastic modulus at 175 ° C. of the cured product is preferably 1500 MPa or less.

  Preferably, the film adhesive 3 further has the following properties. After the film adhesive 3 is attached to the mirror silicon wafer at 40 ° C., the adhesion measured at 25 ° C. is preferably 1 N / 10 mm or more, more preferably 4 N / 10 mm or more. When it is 1 N / 10 mm or more, the film adhesive 3 can be attached to the semiconductor wafer at a low temperature of about 40 ° C. The upper limit of the adhesion force is not particularly limited, but is, for example, 10 N / 10 mm.

  In the present specification, the adhesion force means a peeling force when the film adhesive 3 is peeled from the mirror silicon wafer, and can be measured by the following method.

  Using a 2 kg roller, a mirror silicon wafer at 40 ° C. is attached to the film adhesive 3 and then left at 40 ° C. for 2 minutes. Thereafter, the sample is allowed to stand at room temperature (25 ° C.) for 20 minutes to obtain a sample having the film adhesive 3 and the mirror silicon wafer attached to the film adhesive 3. Using a tensile tester (AGS-J, manufactured by Shimadzu Corporation), the film-like adhesive 3 was removed from the mirror silicon wafer with a peeling angle of 180 degrees, a peeling temperature of 25 ° C., and a peeling speed of 300 mm / min. Measure the peel force when peeling.

  The film adhesive 3 contains a resin component. Examples of the resin component include a thermoplastic resin and a thermosetting resin.

  As thermoplastic resins, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplasticity Examples thereof include polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.

  The acrylic resin is not particularly limited, and includes one or more esters of acrylic acid or methacrylic acid ester having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. And a polymer (acrylic copolymer). Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, and dodecyl group.

  In addition, the other monomer forming the polymer (acrylic copolymer) is not particularly limited, and for example, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid Or a carboxyl group-containing monomer such as crotonic acid, an acid anhydride monomer such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, (meth ) 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4 -Hydroxymethylcyclo Hydroxyl group-containing monomers such as (xyl) -methyl acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate Alternatively, a sulfonic acid group-containing monomer such as (meth) acryloyloxynaphthalene sulfonic acid or the like, or a phosphoric acid group-containing monomer such as 2-hydroxyethylacryloyl phosphate may be used.

  Among the acrylic resins, those having a weight average molecular weight of 100,000 or more are preferable, those having 300,000 to 3,000,000 are more preferable, and those having 500,000 to 2,000,000 are more preferable. It is because it is excellent in adhesiveness and heat resistance in the said numerical range. The weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene.

  The acrylic resin preferably contains a functional group capable of reacting with an epoxy group. Thereby, an acrylic resin and an epoxy resin can be bridged.

  Examples of the functional group capable of reacting with the epoxy group include a carboxyl group and a hydroxyl group. Of these, a carboxyl group is preferred because of its high reactivity with an epoxy group.

The acid value of the acrylic resin is preferably 1 mgKOH / g or more, more preferably 3 mgKOH / g or more. When it is 1 mgKOH / g or more, good cohesive force can be obtained. On the other hand, the acid value of the acrylic resin is preferably 20 mgKOH / g or less, more preferably 10 mgKOH / g or less.
In addition, an acid value can be measured by the neutralization titration method prescribed | regulated to JISK0070-1992.

  The glass transition temperature of the thermoplastic resin is preferably −40 ° C. or higher, more preferably −35 ° C. or higher, and further preferably −25 ° C. or higher. When the temperature is lower than −40 ° C., the film adhesive 3 becomes sticky and the pickup property tends to be deteriorated. The glass transition temperature of the thermoplastic resin is preferably −5 ° C. or lower, more preferably −10 ° C. or lower, and still more preferably −11 ° C. or lower.

  The content of the thermoplastic resin in 100% by weight of the resin component is preferably 5% by weight or more, more preferably 10% by weight or more. Further, the content of the thermoplastic resin in 100% by weight of the resin component is preferably 70% by weight or less, more preferably 50% by weight or less, and further preferably 25% by weight or less.

  Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. In particular, an epoxy resin containing a small amount of ionic impurities that corrode semiconductor elements is preferable. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin is preferable.

  The epoxy resin is not particularly limited. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type. Bifunctional epoxy resins such as ortho-cresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., and epoxy resins such as hydantoin type, trisglycidyl isocyanurate type, or glycidylamine type are used. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance.

As the epoxy resin, a solid epoxy resin at 25 ° C., a liquid epoxy resin at 25 ° C., or the like can be used.
In this specification, the liquid state at 25 ° C. means that the viscosity at 25 ° C. is less than 5000 Pa · s. On the other hand, solid at 25 ° C. means that the viscosity at 25 ° C. is 5000 Pa · s or more. The viscosity can be measured using a model number HAAKE Roto VISCO1 manufactured by Thermo Scientific.

  The content of the epoxy resin solid at 25 ° C. in 100% by weight of the epoxy resin is preferably 10% by weight or more, more preferably 30% by weight or more. If it is less than 10% by weight, the film-like adhesive 3 becomes sticky and the pickup property tends to be poor. The content of the epoxy resin solid at 25 ° C. in 100% by weight of the epoxy resin is preferably 80% by weight or less, more preferably 70% by weight or less.

The epoxy equivalent of the epoxy resin solid at 25 ° C. is preferably 100 g / eq. Or more, more preferably 110 g / eq. That's it. On the other hand, the epoxy equivalent of a solid epoxy resin at 25 ° C. is preferably 2000 g / eq. Or less, more preferably 1500 g / eq. It is as follows.
The epoxy equivalent of the epoxy resin can be measured by a method defined in JIS K 7236-2009.

  The epoxy equivalent of the epoxy resin that is liquid at 25 ° C. is preferably 100 g / eq. Or more, more preferably 110 g / eq. That's it. On the other hand, the epoxy equivalent of the epoxy resin that is liquid at 25 ° C. is preferably 2000 g / eq. Or less, more preferably 1500 g / eq. It is as follows.

  The phenol resin acts as a curing agent for the epoxy resin. For example, a novolak type phenol resin such as a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a tert-butylphenol novolak resin, a nonylphenol novolak resin, or a resol type phenol resin. And polyoxystyrene such as polyparaoxystyrene. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The hydroxyl equivalent of the phenol resin is preferably 80 g / eq. Or more, more preferably 85 g / eq. That's it. On the other hand, the hydroxyl group equivalent of the phenol resin is preferably 1000 g / eq. Or less, more preferably 900 g / eq. It is as follows.

  The blending ratio of the epoxy resin and the phenol resin is preferably blended so that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured product are likely to deteriorate.

  The content of the thermosetting resin in 100% by weight of the resin component is preferably 30% by weight or more, more preferably 50% by weight or more, and further preferably 75% by weight or more. The content of the thermosetting resin in 100% by weight of the resin component is preferably 95% by weight or less, more preferably 90% by weight or less.

  The film adhesive 3 includes conductive particles.

  As the conductive particles, sinterable metal particles, flaky metal particles and the like can be suitably used.

  The sinterable metal particles have a property that at least a part thereof is sintered at 200 ° C. Therefore, the sinterable metal particles are sintered under standard curing conditions. For this reason, it is possible to thicken a heat conduction path by hardening the film adhesive 3, and heat dissipation can be improved. In addition, the electrical resistivity can be lowered.

  As the sinterable metal particles, an aggregate of metal fine particles can be suitably used. Examples of the metal fine particles include metal fine particles and coated fine particles. The coated fine particles include core fine particles and a coating film that coats the core fine particles. Examples of the material for the core fine particles include glass. Examples of the material for the coating film include metals. Examples of the metal include gold, silver, and copper.

  The average particle diameter of the sinterable metal particles is preferably 0.005 μm or more, more preferably 0.01 μm or more. Examples of the lower limit of the average particle diameter include 0.1 μm, 0.5 μm, and 1 μm. On the other hand, the average particle size of the sinterable metal particles is preferably 30 μm or less, more preferably 25 μm or less. Examples of the upper limit of the average particle diameter include 20 μm, 15 μm, 10 μm, and 5 μm.

  The average particle diameter of the sinterable metal particles is measured by the following method. That is, D50 data obtained by measuring in a standard mode using a particle size distribution measuring apparatus (Microtrack HRA manufactured by Nikkiso) is used as the particle diameter.

  The shape of the sinterable metal particles is not particularly limited and is, for example, indefinite.

  The average major axis of the flaky metal particles is preferably 0.5 μm or more, more preferably 1.0 μm or more. When it is 0.5 μm or more, the electrical resistivity can be effectively reduced. On the other hand, the average major axis of the flaky metal particles is preferably 50 μm or less, more preferably 30 μm or less.

  The aspect ratio of the flaky metal particles is preferably 5 or more, preferably 8 or more, more preferably 10 or more. When it is 5 or more, the electrical resistivity can be effectively reduced. On the other hand, the aspect ratio of the flaky metal particles is preferably 10,000 or less, more preferably 100 or less, still more preferably 70 or less, and particularly preferably 50 or less.

  The aspect ratio of the flaky metal particles is the ratio of the average major axis to the average thickness (average major axis / average thickness). In this specification, the average major axis of the flaky particles is obtained by observing the cross section of the film adhesive 3 with a scanning electron microscope (SEM) and measuring the major axis of 100 randomly selected flaky metal particles. The average value obtained. The average thickness of the flaky metal particles is an average value obtained by observing the cross section of the film adhesive 3 with a scanning electron microscope (SEM) and measuring the thickness of 100 randomly selected flaky metal particles. It is.

  Examples of the material for the flaky metal particles include gold, silver, and copper. Examples of the flaky metal particles include flaky particles made of metal, flaky coated particles, and the like. The coated particle includes a core particle and a coating film that coats the core particle. Examples of the material for the core particles include glass. Examples of the material for the coating film include metals. Examples of the metal include gold, silver, and copper.

  The content of the sinterable metal particles in 100% by weight of the conductive particles is preferably 5% by weight or more, more preferably 10% by weight or more, and further preferably 15% by weight or more. The content of the sinterable metal particles in 100% by weight of the conductive particles is preferably 50% by weight or less, more preferably 40% by weight or less, and further preferably 35% by weight or less. When it exceeds 50% by weight, it tends to be difficult to form a film.

  The content of the conductive particles in the film adhesive 3 is preferably 50% by weight or more, more preferably 60% by weight or more, still more preferably 70% by weight or more, and particularly preferably 75% by weight or more. Content of the electroconductive particle in the film adhesive 3 becomes like this. Preferably it is 95 weight% or less, More preferably, it is 90 weight% or less. If it exceeds 95% by weight, film formation tends to be difficult.

  In addition to the above components, the film adhesive 3 may appropriately contain a compounding agent generally used for film production, for example, a crosslinking agent.

  The film adhesive 3 can be manufactured by a normal method. For example, an adhesive composition solution containing each of the above components is prepared, and the adhesive composition solution is applied on a base separator so as to have a predetermined thickness to form a coating film, and then the coating film is dried. Thereby, the film adhesive 3 can be manufactured.

  Although it does not specifically limit as a solvent used for adhesive composition solution, The organic solvent which can melt | dissolve, knead | mix or disperse | distribute each said component uniformly is preferable. Examples thereof include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone, toluene, xylene, and the like. The application method is not particularly limited. Examples of the solvent coating method include a die coater, a gravure coater, a roll coater, a reverse coater, a comma coater, a pipe doctor coater, and screen printing. Of these, a die coater is preferable in terms of high uniformity of coating thickness.

  As the base material separator, polyethylene terephthalate (PET), polyethylene, polypropylene, a plastic film or paper whose surface is coated with a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate release agent can be used. Examples of the method for applying the adhesive composition solution include roll coating, screen coating, and gravure coating. Moreover, the drying conditions of a coating film are not specifically limited, For example, it can carry out in drying temperature 70-160 degreeC and drying time 1-5 minutes.

  As a method for producing the film adhesive 3, for example, a method of producing the film adhesive 3 by mixing the respective components with a mixer and press-molding the obtained mixture is also suitable. A planetary mixer etc. are mentioned as a mixer.

  Although the thickness of the film adhesive 3 is not specifically limited, 5 micrometers or more are preferable and 15 micrometers or more are more preferable. If it is less than 5 μm, the area in contact with the semiconductor wafer and the semiconductor chip may become unstable. The thickness of the film adhesive 3 is preferably 100 μm or less, and more preferably 50 μm or less. If the thickness exceeds 100 μm, the film adhesive 3 may be excessively protruded by a load of die attachment.

  The film adhesive 3 is used for manufacturing a semiconductor device. Especially, it can be used conveniently for manufacture of a power semiconductor device. Specifically, it is used as a die attach film that adheres (die attaches) an adherend such as a lead frame and a semiconductor chip. Examples of the adherend include a lead frame, an interposer, and a semiconductor chip.

  The film adhesive 3 is preferably used in the form of a dicing tape with a film adhesive.

[Dicing tape 10 with film adhesive]
As shown in FIG. 2, the dicing tape 10 with a film adhesive includes a dicing tape 1 and a film adhesive 3 disposed on the dicing tape 1. The dicing tape 1 includes a base material 11 and an adhesive layer 12 arranged on the base material 11. The film adhesive 3 is disposed on the pressure-sensitive adhesive layer 12.

  As shown in FIG. 3, the dicing tape 10 with a film adhesive may have a configuration in which the film adhesive 3 is formed only on a work (semiconductor wafer 4 or the like) affixed portion.

  The base material 11 serves as a strength matrix of the dicing tape 10 with a film adhesive, and preferably has ultraviolet transparency. Examples of the base material 11 include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, and polymethylpentene. Polyolefin, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene -Hexene copolymers, polyesters such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamid , Polyphenyl sulphates id, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), and paper.

  The surface of the base material 11 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed.

  The thickness of the substrate 11 is not particularly limited and can be determined as appropriate, but is generally about 5 to 200 μm.

  It does not restrict | limit especially as an adhesive used for formation of the adhesive layer 12, For example, common pressure sensitive adhesives, such as an acrylic adhesive and a rubber adhesive, can be used. As pressure-sensitive adhesives, acrylic adhesives based on acrylic polymers are used as the base polymer from the standpoint of cleanability of electronic components that are difficult to contaminate such as semiconductor wafers and glass with organic solvents such as ultrapure water and alcohol. preferable.

  Examples of the acrylic polymer include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, isopropyl ester). Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester, C1-C30, especially C4-C18 linear or branched alkyl esters of alkyl groups such as octadecyl ester and eicosyl ester) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, etc. One or acrylic polymer using two or more of the monomer component cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

  The acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. May be. Examples of such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Sti Contains sulfonic acid groups such as sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalene sulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

  Furthermore, since the acrylic polymer is cross-linked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

  The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be carried out by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, it is preferable that the content of the low molecular weight substance is small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.

  In addition, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive. Generally, it is preferable to add about 5 parts by weight or less, and further 0.1 to 5 parts by weight with respect to 100 parts by weight of the base polymer. Furthermore, additives such as various conventionally known tackifiers and anti-aging agents may be used for the pressure-sensitive adhesive, if necessary, in addition to the above components.

  The pressure-sensitive adhesive layer 12 can be formed of a radiation curable pressure-sensitive adhesive. The radiation curable pressure-sensitive adhesive can easily reduce its adhesive strength by increasing the degree of crosslinking by irradiation with radiation such as ultraviolet rays.

  By irradiating only the part 12a corresponding to the work pasting part of the pressure-sensitive adhesive layer 12 shown in FIG. 2, a difference in adhesive strength with the other part 12b can be provided. In this case, the portion 12b formed of the uncured radiation curable pressure-sensitive adhesive sticks to the film adhesive 3 and can secure a holding force when dicing.

  Moreover, the said part 12a in which adhesive force fell remarkably can be formed by hardening the radiation-curing-type adhesive layer 12 according to the film adhesive 3 shown in FIG. In this case, the wafer ring can be fixed to the portion 12b formed of an uncured radiation curable adhesive.

  That is, when the pressure-sensitive adhesive layer 12 is formed of a radiation curable pressure-sensitive adhesive, the portion 12a is irradiated with radiation so that the pressure-sensitive adhesive force of the portion 12a in the pressure-sensitive adhesive layer 12 <the pressure-sensitive adhesive strength of the other portion 12b. It is preferable.

  As the radiation curable pressure-sensitive adhesive, those having a radiation curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. Examples of the radiation curable pressure-sensitive adhesive include an addition-type radiation curable pressure-sensitive adhesive in which a radiation-curable monomer component or oligomer component is blended with a general pressure-sensitive pressure-sensitive adhesive such as the acrylic pressure-sensitive adhesive or rubber-based pressure-sensitive adhesive. An agent can be illustrated.

  Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation curable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a molecular weight in the range of about 100 to 30000 are suitable. The compounding amount of the radiation-curable monomer component or oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the adhesive strength of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of a base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  In addition to the additive-type radiation curable adhesive described above, the radiation curable pressure-sensitive adhesive has a carbon-carbon double bond in the polymer side chain or main chain or at the main chain terminal as a base polymer. Intrinsic radiation curable pressure sensitive adhesives using Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain many, so the oligomer components do not move through the adhesive over time and are stable. It is preferable because an adhesive layer having a layered structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, those having an acrylic polymer as a basic skeleton are preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted. However, the carbon-carbon double bond can be easily introduced into the polymer side chain for easy molecular design. . For example, after a monomer having a functional group is previously copolymerized with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. Moreover, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the preferable combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

  As the intrinsic radiation curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer does not deteriorate the characteristics. Components and oligomer components can also be blended. The radiation-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  The radiation curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfo Aromatic sulfonyl chloride compounds such as luchloride; Photoactive oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

  Examples of the radiation curable pressure-sensitive adhesive include photopolymerizable compounds such as an addition polymerizable compound having two or more unsaturated bonds and an alkoxysilane having an epoxy group disclosed in JP-A-60-196956. And rubber-based pressure-sensitive adhesives and acrylic pressure-sensitive adhesives containing photopolymerization initiators such as carbonyl compounds, organic sulfur compounds, peroxides, amines, and onium salt-based compounds.

  The radiation curable pressure-sensitive adhesive layer 12 may contain a compound that is colored by radiation irradiation, if necessary. By including a compound to be colored in the pressure-sensitive adhesive layer 12 by irradiation with radiation, only the irradiated portion can be colored. The compound that is colored by irradiation with radiation is a colorless or light color compound before irradiation with radiation, but becomes a color by irradiation with radiation, and examples thereof include leuco dyes. The use ratio of the compound colored by radiation irradiation can be set as appropriate.

  The thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, but is preferably about 1 to 50 μm from the viewpoint of preventing chipping of the chip cut surface and compatibility of fixing and holding the film adhesive 3. Preferably it is 2-30 micrometers, Furthermore, 5-25 micrometers is preferable.

  The film adhesive 3 of the dicing tape 10 with a film adhesive is preferably protected by a separator (not shown). The separator has a function as a protective material for protecting the film adhesive 3 until it is put into practical use. The separator is peeled off when the workpiece is stuck on the film adhesive 3. As the separator, it is also possible to use polyethylene terephthalate (PET), polyethylene, polypropylene, a plastic film or paper whose surface is coated with a release agent such as a fluorine release agent or a long-chain alkyl acrylate release agent.

  The dicing tape 10 with a film adhesive can be manufactured by a normal method. For example, the dicing tape 10 with a film adhesive can be manufactured by bonding the adhesive layer 12 of the dicing tape 1 and the film adhesive 3 together.

  It is preferable that the peeling force when the film-like adhesive 3 is peeled off from the dicing tape 1 is 0.01 to 3.00 N / 20 mm under the conditions of a peeling temperature of 25 ° C. and a peeling speed of 300 mm / min. If it is less than 0.01 N / 20 mm, there is a risk of chip jumping during dicing. On the other hand, if it exceeds 3.00 N / 20 mm, the pickup tends to be difficult.

[Method for Manufacturing Semiconductor Device]
A method for manufacturing a semiconductor device will be described.

  As shown in FIG. 4, a dicing tape 10 with a film adhesive is pressure-bonded to the semiconductor wafer 4. Examples of the semiconductor wafer 4 include a silicon wafer, a silicon carbide wafer, and a compound semiconductor wafer. Examples of compound semiconductor wafers include gallium nitride wafers.

  Examples of the crimping method include a method of pressing with a pressing means such as a crimping roll.

  The pressing temperature (sticking temperature) is preferably 35 ° C. or higher, and more preferably 37 ° C. or higher. The upper limit of the pressure bonding temperature is preferably lower, preferably 50 ° C. or lower, more preferably 45 ° C. or lower. By crimping at a low temperature, warping of the semiconductor wafer 4 can be suppressed.

Moreover, it is preferable that it is 1 * 10 < ⁵ > Pa-1 * 10 < ⁷ > Pa, and it is more preferable that a pressure is 2 * 10 < ⁵ > Pa-8 * 10 < ⁶ > Pa.

  As shown in FIG. 5, die bonding chips 41 are formed by dicing the semiconductor wafer 4. The die bonding chip 41 includes a film adhesive 3 and a semiconductor chip 5 disposed on the film adhesive 3. In this step, for example, a cutting method called full cut for cutting up to the dicing tape 10 with a film adhesive can be adopted. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. Moreover, since the semiconductor wafer 4 is bonded and fixed by the dicing tape 10 with a film adhesive, chip chipping and chip jump can be suppressed, and damage to the semiconductor wafer 4 can also be suppressed.

  The die bonding chip 41 is picked up. The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, there is a method of pushing up the die bonding chip 41 from the dicing tape 1 side with a needle and picking up the pushed up die bonding chip 41 with a pickup device.

  When the pressure-sensitive adhesive layer 12 is an ultraviolet curable type, the pressure-sensitive adhesive layer 12 is picked up after being irradiated with ultraviolet rays. Thereby, since the adhesive force with respect to the die-bonding chip | tip 41 of the adhesive layer 12 falls, the chip | tip 41 for die-bonding can be picked up easily. Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary.

  As shown in FIG. 6, an adherend 61 with a semiconductor chip is obtained by pressure-bonding a die bonding chip 41 to the adherend 6. The adherend 61 with a semiconductor chip includes an adherend 6, a film adhesive 3 disposed on the adherend 6, and a semiconductor chip 5 disposed on the film adhesive 3.

  The temperature at which the die bonding chip 41 is pressure-bonded to the adherend 6 (hereinafter referred to as “die attach temperature”) is preferably 80 ° C. or higher, more preferably 90 ° C. or higher. The die attach temperature is preferably 150 ° C. or lower, more preferably 130 ° C. or lower.

  The film adhesive 3 is cured by heating the adherend 61 with a semiconductor chip under pressure. By thermally curing the film adhesive 3 under pressure, voids existing between the film adhesive 3 and the adherend 6 can be eliminated, and the film adhesive 3 is adhered to the adherend 6. The area in contact with can be secured.

Examples of a method of heating under pressure include a method of heating the adherend 61 with a semiconductor chip disposed in a chamber filled with an inert gas. The pressure of the pressurized atmosphere is preferably 0.5 kg / cm ² (4.9 × 10 ⁻² MPa) or more, more preferably 1 kg / cm ² (9.8 × 10 ⁻² MPa) or more, and further preferably 5 kg. / Cm ² (4.9 × 10 ⁻¹ MPa) or more. If it is 0.5 kg / cm ² or more, voids existing between the film adhesive 3 and the adherend 6 can be easily eliminated. The pressure of the pressurized atmosphere is preferably 20kg ^/ cm 2 (1.96MPa), more preferably 18kg ^/ cm 2 (1.77MPa) or less, more preferably not more than 15kg ^/ cm 2 (1.47MPa). The protrusion of the film adhesive 3 due to excessive pressurization can be suppressed as it is 20 kg / cm ² or less.

  The heating temperature is preferably 80 ° C. or higher, more preferably 100 ° C. or higher, further preferably 120 ° C. or higher, and particularly preferably 170 ° C. or higher. When the temperature is 80 ° C. or higher, the film-like adhesive 3 can have an appropriate hardness, and voids can be effectively eliminated by pressure curing. The heating temperature is preferably 260 ° C. or lower, more preferably 220 ° C. or lower, still more preferably 200 ° C. or lower, and particularly preferably 180 ° C. or lower. It can prevent decomposition | disassembly of the film adhesive 3 before hardening as it is 260 degrees C or less.

  The heating time is preferably 0.1 hour or longer, more preferably 0.2 hour or longer, and further preferably 0.5 hour or longer. When it is 0.1 hour or longer, the effect of pressurization can be sufficiently obtained. The heating time is preferably 24 hours or less, more preferably 3 hours or less, and even more preferably 1 hour or less.

  As shown in FIG. 7, a wire bonding step is performed in which the tip of the terminal portion (inner lead) of the adherend 6 and an electrode pad (not shown) on the semiconductor chip 5 are electrically connected by a bonding wire 7. As the bonding wire 7, for example, a gold wire, an aluminum wire or a copper wire is used. The temperature during wire bonding is preferably 80 ° C. or higher, more preferably 120 ° C. or higher, and the temperature is preferably 250 ° C. or lower, more preferably 175 ° C. or lower. The heating time is several seconds to several minutes (for example, 1 second to 1 minute). The connection is performed by a combination of vibration energy by ultrasonic waves and pressure energy by pressurization while being heated so as to be within the temperature range.

  Subsequently, a sealing step for sealing the semiconductor chip 5 with the sealing resin 8 is performed. This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step is performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is preferably 165 ° C. or higher, more preferably 170 ° C. or higher, and the heating temperature is preferably 185 ° C. or lower, more preferably 180 ° C. or lower.

  If necessary, the sealed material may be further heated (post-curing step). Thereby, the sealing resin 8 which is insufficiently cured in the sealing process can be completely cured. The heating temperature can be set as appropriate.

  As described above, the semiconductor device can be manufactured by a method including the step of pressure-bonding the die bonding chip 41 including the film adhesive 3 and the semiconductor chip 5 disposed on the film adhesive 3 to the adherend 6. This method further includes a step of curing the film adhesive 3 by heating the adherend 61 with a semiconductor chip obtained by the step of pressure-bonding the die bonding chip 41 to the adherend 6.

  More specifically, the method according to the first embodiment is arranged on the film adhesive 3, the step of preparing the dicing tape 10 with the film adhesive, the step of pressure-bonding the semiconductor wafer 4 to the film adhesive 3, and the film adhesive 3. The die bonding chip 41 is formed by dicing the semiconductor wafer 4, the step of pressure bonding the die bonding chip 41 to the adherend 6, and the step of pressure bonding the die bonding chip 41 to the adherend 6. A step of curing the film adhesive 3 by heating the adherend 61 with a semiconductor chip.

  EXAMPLES Hereinafter, although this invention is demonstrated in detail using an Example, this invention is not limited to a following example, unless the summary is exceeded.

The components used in the examples will be described.
Thermoplastic resin: Teisan resin SG-70L manufactured by Nagase ChemteX Corporation (acrylic copolymer having carboxyl group and hydroxyl group, Mw: 900,000, acid value: 5 mgKOH / g, glass transition temperature: -13 ° C)
Epoxy resin 1: EOCN-1020-4 manufactured by Nippon Kayaku Co., Ltd. (epoxy equivalent 198 g / eq., Epoxy resin solid at 25 ° C.)
Epoxy resin 2: JER828 manufactured by Mitsubishi Chemical Corporation (epoxy resin having a bisphenol type skeleton and liquid at 25 ° C., epkin equivalent of 184 g / eq. To 194 g / eq.)
Epoxy resin 3: EPICLON EXA-4816 (epoxy equivalent 403 g / eq., Liquid epoxy resin at 25 ° C.) manufactured by DIC Corporation
Phenol resin 1: MEH-8000H manufactured by Meiwa Kasei Co., Ltd. (phenol resin having a hydroxyl group equivalent of 139 g / eq. To 143 g / eq.)
Phenol resin 2: MEH-8005 manufactured by Meiwa Kasei Co., Ltd. (phenol resin having a hydroxyl group equivalent of 133 g / eq. To 138 g / eq.)
Conductive particles 1: 1200YP manufactured by Mitsui Mining & Smelting Co., Ltd. (flaked copper powder, average particle size 3.5 μm, aspect ratio: 10)
Conductive particles 2: 1400 YP (flaked copper powder, average particle size 7.0 μm, aspect ratio: 25) manufactured by Mitsui Mining & Smelting Co., Ltd.
Conductive particles 3: SPH02J manufactured by Mitsui Mining & Smelting Co., Ltd. (aggregates of silver fine particles, average particle diameter of aggregates of 1.8 μm, irregular shape)
Catalyst: TPP-K (tetraphenylphosphonium tetraphenylborate) manufactured by Hokuko Chemical Co., Ltd.

[Production of film adhesive]
According to the mixing ratio shown in Table 1, each component and solvent (methyl ethyl ketone) shown in Table 1 were placed in a stirring vessel of a hybrid mixer (HM-500 manufactured by Keyence), and stirred and mixed in a stirring mode for 3 minutes. The obtained varnish was applied to a release treatment film (MRA50 manufactured by Mitsubishi Resin Co., Ltd.) with a die coater and then dried to produce a film adhesive having a thickness of 30 μm.

[Production of cured product]
Using a dryer, the film adhesive was heated at 140 ° C. for 1 hour, and then heated at 200 ° C. for 2 hours to obtain a cured product.

[Evaluation 1]
The following evaluation was performed about the obtained film adhesive and hardened | cured material. The results are shown in Table 1.

(Thermal conductivity)
Thermal diffusivity α (m ² / s) was measured by a temperature wave thermal analysis method (TWA method) using an eye phase mobile manufactured by Eye Phase Co., Ltd. DSC 6220 manufactured by SII Nano Technology Co., Ltd. was used, DSC measurement was performed under the conditions of a temperature rising rate of 10 ° C./min and a temperature of 20 ° C. to 300 ° C., and was described in a JIS handbook (specific heat capacity measuring method K-7123 1987). The specific heat capacity Cp (J / g · ° C.) was determined by the method. Specific gravity was measured. And the heat conductivity was calculated | required by the following formula.

(Electric resistivity)
As shown in FIG. 8, an evaluation substrate 100 having copper wirings 102a, 102b, 102c, and 102d having a wiring width of 2 mm and a wiring thickness of 10 μm arranged on the substrate 101 was prepared. The distance between the copper wiring 102a and the copper wiring 102b, the distance between the copper wiring 102b and the copper wiring 102c, and the distance between the copper wiring 102c and the copper wiring 102d were 15 mm. A test film 200 of 10 mm × 50 mm × 30 μm was cut out from the film adhesive. As shown in FIG. 9, the test film 200 was pressure-bonded to the copper wirings 102a, 102b, 102c, and 102d at 70 ° C., 0.5 MPa, and 10 mm / s to produce a test substrate 300. The test substrate 300 was cured by heating the test substrate 300 in a nitrogen atmosphere at 140 ° C. for 1 hour and then at 200 ° C. for 2 hours. A resistance value between the copper wiring 102a and the copper wiring 102b, a resistance value between the copper wiring 102a and the copper wiring 102c, and a resistance value between the copper wiring 102a and the copper wiring 102d were measured using a mirium meter. From each resistance value, the bulk resistance value between the copper wiring 102a and the copper wiring 102b, the bulk resistance value between the copper wiring 102b and the copper wiring 102c, and the bulk resistance value between the copper wiring 102c and the copper wiring 102d were calculated. Furthermore, the average value of three bulk resistance values was calculated. And the electrical resistivity was computed by the following formula.

[Evaluation 2]
The following evaluation was performed about the electroconductive particles 1-3.

(Sintering)
Conductive particles 1 to 3 disposed on the glass plate were heated at 140 ° C. for 1 hour, and then heated at 200 ° C. for 2 hours. Before and after heating, the conductive particles 1 to 3 were observed with a scanning electron microscope (SEM). Regarding the conductive particles 3, sintering (fusion phenomenon) was not confirmed before heating, but sintering was confirmed after heating. On the other hand, regarding conductive particles 1 and 2, no sintering was confirmed before and after heating.

DESCRIPTION OF SYMBOLS 10 Dicing tape 1 with film-like adhesive Dicing tape 11 Base material 12 Adhesive layer 3 Film-like adhesive 4 Semiconductor wafer 5 Semiconductor chip 41 Chip for die-bonding 6 Substrate 61 Substrate with semiconductor chip 7 Bonding wire 8 Sealing resin

100 Evaluation board 101 Boards 102a, 102b, 102c, 102d Copper wiring 200 Test film 300 Test board

503 Film adhesive 505 Semiconductor chip 541 Die bond chip 506 Substrate

Claims (9)

Containing conductive particles,
The conductive particles include flaky metal particles and sinterable metal particles at least partially sintered at 200 ° C.,
The ratio of the first thermal conductivity of the cured product obtained by curing by heating to the second thermal conductivity before heating (the first thermal conductivity / the second thermal conductivity) is 2.0 or more. A conductive film adhesive.   The conductive film adhesive according to claim 1, wherein the first thermal conductivity is 1.7 W / m · K or more.   The conductive film adhesive according to claim 1 or 2, wherein a content of the sinterable metal particles in 100% by weight of the conductive particles is 5% by weight to 50% by weight. Including resin components,
The electrically conductive film adhesive in any one of Claims 1-3 in which the said resin component contains a thermoplastic resin and a thermosetting resin.   The conductive film adhesive according to claim 4, further comprising a curing agent.   Conductive film adhesive according to any one of claims 1 to 5 for die bonding. A dicing tape with a film adhesive comprising: a dicing tape; and the conductive film adhesive according to any one of claims 1 to 6 disposed on the dicing tape.   The dicing tape with a film adhesive according to claim 7, wherein the dicing tape includes a base material and an adhesive layer disposed on the base material.   A semiconductor device comprising a step of pressure-bonding a chip for die bonding comprising the conductive film adhesive according to any one of claims 1 to 6 and a semiconductor chip disposed on the conductive film adhesive to an adherend. Manufacturing method.

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