KR20220030218A - Dicing and die-bonding integrated film, die-bonding film, and manufacturing method of a semiconductor device - Google Patents

Abstract

A dicing tape having a substrate and an adhesive layer provided on the substrate, and having a first surface and a second surface opposite to the first surface, on the adhesive layer of the dicing tape, so that the adhesive layer and the first surface are in contact Disclosed is a dicing die-bonding integrated film having an disposed die-bonding film. A die-bonding film contains 75 mass % or more of electroconductive particle on the basis of whole quantity of a die-bonding film. The die-bonding film WHEREIN: The surface roughness of the 1st surface is 1.0 micrometer or less, and the surface roughness of the 2nd surface is 1.0 micrometer or less.

Description

Dicing and die-bonding integrated film, die-bonding film, and manufacturing method of a semiconductor device

The present disclosure relates to a dicing/die-bonding integrated film, a die-bonding film, and a method of manufacturing a semiconductor device.

Conventionally, a semiconductor device is manufactured through the following process. First, a semiconductor wafer is affixed to the adhesive sheet for dicing, and a semiconductor wafer is segmented into semiconductor chips in that state (dicing process). After that, a pick-up process, a crimping process, a die bonding process, etc. are implemented. Patent Document 1 discloses a pressure-sensitive adhesive sheet (dicing and die-bonding integrated film) having both a function of fixing a semiconductor wafer in a dicing process and a function of bonding a semiconductor chip to a substrate in a die bonding process. A dicing process WHEREIN: A chip|tip with an adhesive bond piece is obtained by separating a semiconductor wafer and an adhesive bond layer into pieces.

DESCRIPTION OF RELATED ART In recent years, the device called the power semiconductor device which performs electric power control etc. is popular. Power semiconductor devices tend to generate heat due to the supplied current, and excellent heat dissipation properties are required. Patent Document 2 discloses a conductive film adhesive and a dicing tape with a film adhesive having a higher heat dissipation property after curing than a heat dissipation property before curing.

Patent Document 1: Japanese Patent Application Laid-Open No. 2008-218571 Patent Document 2: Japanese Patent Publication No. 6396189

The present inventors, in the process of developing a semiconductor device having excellent heat dissipation, in the adhesive layer of the dicing die-bonding integrated film having an adhesive layer and an adhesive layer made of a die-bonding film, sufficient heat dissipation is obtained (for example, As a result of mix|blending the electroconductive particle of 75 mass % or more) on the basis of whole quantity of the die-bonding film, it discovered that the adhesiveness of an adhesive bond layer and an adhesion layer was easy to become inadequate. If the adhesiveness of both is insufficient, there may be a problem that a dicing and die-bonding integrated film cannot be formed, and even when it can be formed, the chip including the adhesive piece is separated from the adhesive layer in the dicing process. A trouble (chip flying) may occur. Moreover, as a result of further examination by the present inventors, when the adhesive bond layer of a dicing die-bonding integrated film was affixed to a semiconductor wafer, WHEREIN: It also discovered that the adhesiveness of an adhesive bond layer and a semiconductor wafer tends to become inadequate. When the adhesiveness of both is insufficient, the trouble that a dicing die-bonding integrated film detach|desorbs from a semiconductor wafer in a dicing process may generate|occur|produce.

Therefore, one aspect of the present disclosure is, in a dicing die-bonding integrated film having an adhesive layer and an adhesive layer, has excellent heat dissipation, has excellent adhesion between the adhesive layer and the adhesive layer, and is adhered to a semiconductor wafer. An object of the present invention is to provide a dicing/die-bonding integrated film having excellent adhesion between an adhesive layer and a semiconductor wafer.

One aspect of the present disclosure relates to a dicing die-bonding integrated film. The dicing and die-bonding integrated film has a dicing tape having a base material and an adhesive layer provided on the base material, and a first surface and a second surface opposite to the first surface, and the adhesion of the dicing tape On the layer, a die-bonding film disposed so that the adhesive layer and the first surface are in contact with each other is provided. A die-bonding film contains 75 mass % or more of electroconductive particle on the basis of whole quantity of a die-bonding film. The die-bonding film WHEREIN: The surface roughness of the 1st surface is 1.0 micrometer or less, and the surface roughness of the 2nd surface is 1.0 micrometer or less. Such a dicing and die-bonding integrated film has excellent heat dissipation, has excellent adhesion between the adhesive layer and the adhesive layer made of the die-bonding film, and when affixed to a semiconductor wafer, the adhesive layer made of the die-bonding film and It is excellent in the adhesiveness of a semiconductor wafer.

It is preferable that the surface roughness of a 1st surface is larger than the surface roughness of a 2nd surface. When the surface roughness of the first surface is greater than the surface roughness of the second surface, the adhesion between the die-bonding film and the adhesive layer (dicing tape) at the time of dicing is more excellent, and there is a tendency that chip flying etc. can be suppressed. there is.

0.25 micrometer or more may be sufficient as the surface roughness of the 1st surface. That is, 0.25-1.0 micrometer of surface roughness of the 1st surface may be sufficient. If the surface roughness of the 1st surface is 1.0 micrometer or less, there exists a tendency which can prevent the fall of the adhesiveness by surface roughness. On the other hand, if the surface roughness of the 1st surface is 0.25 micrometer or more, there exists a tendency which can prevent the fall of the anchor effect by surface smoothness becoming high too much. The dicing and die-bonding integrated film including the die-bonding film having the surface roughness of the first surface in such a range can further improve the adhesion between the adhesive layer and the pressure-sensitive adhesive layer made of the die-bonding film.

The thermal conductivity in a die-bonding film may be 1.6 W/m*K or more. When the thermal conductivity in the die-bonding film is 1.6 W/m·K or more, the dicing and die-bonding integrated film tends to be more excellent in heat dissipation.

Spherical shape may be sufficient as electroconductive particle. In addition, 5.0 micrometers or less or 3.0 micrometers or less may be sufficient as the average particle diameter of electroconductive particle. By using such electroconductive particle, even if it does not perform a physical smoothing process, there exists a tendency for the die-bonding film which has predetermined surface roughness to be easy to be obtained.

The electroconductive particle may be electroconductive particle whose thermal conductivity (20 degreeC) is 250 W/m*K or more. By using such an electroconductive particle, the dicing die-bonding integrated film becomes what has the more outstanding heat dissipation property.

The die-bonding film may further contain a thermosetting resin, a curing agent, and an elastomer. The die-bonding film containing these tends to be easy to adjust the surface roughness to a predetermined range.

The thermosetting resin may contain the epoxy resin liquid at 25 degreeC. When a thermosetting resin contains a liquid epoxy resin at 25 degreeC, 2 mass % or more may be sufficient as content of the said epoxy resin based on the whole quantity of a die-bonding film. When the thermosetting resin contains a liquid epoxy resin at 25° C. in a predetermined range, a die-bonding film having a predetermined surface roughness tends to be easily obtained. Moreover, even in the case of performing a physical smoothing process, there exists a tendency which can be performed under milder conditions.

One aspect of the present disclosure provides a step of attaching the second surface of the die bonding film of the dicing and die bonding integrated film to a semiconductor wafer, a step of separating the semiconductor wafer and the die bonding film into pieces, and a die from a dicing tape The manufacturing method of the semiconductor device provided with the process of picking up the semiconductor chip with a bonding film piece, and the process of adhering a semiconductor chip to a support substrate via a die-bonding film piece is provided. By using the dicing and die-bonding integrated film, it becomes possible to manufacture a semiconductor device excellent in heat dissipation properties.

One aspect of the present disclosure relates to a die-bonding film. A die-bonding film has a 1st surface and the 2nd surface on the opposite side to a 1st surface, and contains 75 mass % or more of electroconductive particles based on the whole quantity of a die-bonding film. The die-bonding film WHEREIN: The surface roughness of the 1st surface is 1.0 micrometer or less, and the surface roughness of the 2nd surface is 1.0 micrometer or less. It is preferable that the surface roughness of a 1st surface is larger than the surface roughness of a 2nd surface. 0.25 micrometer or more may be sufficient as the surface roughness of the 1st surface.

The thermal conductivity in a die-bonding film may be 1.6 W/m*K or more.

Spherical shape may be sufficient as electroconductive particle. In addition, 5.0 micrometers or less or 3.0 micrometers or less may be sufficient as the average particle diameter of electroconductive particle. The electroconductive particle may be electroconductive particle whose thermal conductivity (20 degreeC) is 250 W/m*K or more.

The die-bonding film may further contain a thermosetting resin, a curing agent, and an elastomer. The thermosetting resin may contain the epoxy resin liquid at 25 degreeC. When a thermosetting resin contains a liquid epoxy resin at 25 degreeC, 2 mass % or more may be sufficient as content of the said epoxy resin based on the whole quantity of a die-bonding film.

According to the present disclosure, in a dicing and die-bonding integrated film having an adhesive layer and an adhesive layer, it has excellent heat dissipation, has excellent adhesion between the adhesive layer and the adhesive layer, and even when affixed to a semiconductor wafer, the adhesive layer A dicing and die-bonding integrated film having excellent adhesion between a semiconductor wafer and a semiconductor wafer is provided. Further, according to the present disclosure, a method for manufacturing a semiconductor device using such a dicing/die-bonding integrated film is provided. Further, according to the present disclosure, a die-bonding film suitably used for such a dicing/die-bonding integrated film is provided.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic sectional drawing which shows one Embodiment of a die-bonding film.
2 : is a schematic sectional drawing which shows one Embodiment of a dicing die-bonding integrated film.
3 is a schematic cross-sectional view showing an embodiment of a method for manufacturing a semiconductor device. 3(a), (b), (c), (d), (e), and (f) are cross-sectional views schematically showing each step.
4 is a schematic cross-sectional view showing an embodiment of a semiconductor device.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this indication is described, referring drawings suitably. However, this invention is not limited to the following embodiment. In the following embodiments, the constituent elements (including steps and the like) are not essential except as otherwise specified. The sizes of the components in each drawing are conceptual, and the relative relationship between the sizes of the components is not limited to those shown in each drawing.

It is the same also about the numerical value and the range in this specification, and does not restrict|limit this indication. In this specification, the numerical range indicated using "-" represents the range which includes the numerical value described before and after "-" as a minimum value and a maximum value, respectively. In the numerical range described step by step in this specification, the upper limit or lower limit described in one numerical range may be substituted with the upper limit or lower limit of the numerical range described in another step. In addition, in the numerical range described in this specification, you may substitute the upper limit or lower limit of the numerical range with the value shown in an Example.

In this specification, (meth)acrylate means an acrylate or a methacrylate corresponding thereto. The same applies to other analogous expressions such as (meth)acryloyl group and (meth)acryl copolymer.

[Die Bonding Film]

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic sectional drawing which shows one Embodiment of a die-bonding film. The die-bonding film 10 shown in FIG. 1 has a 1st surface 10A and a 2nd surface 10B opposite to the 1st surface 10A. The first surface 10A may be a surface disposed on the adhesive layer of the dicing tape, as will be described later. The die-bonding film 10 may be provided on the support film 20, as shown in FIG. The die-bonding film 10 is thermosetting, and can be in a fully cured product (C stage) state after going through a semi-cured (B-stage) state and after curing treatment.

The die-bonding film 10 contains (a) electroconductive particle, and may further contain (b) thermosetting resin, (c) hardening|curing agent, and (d) elastomer as needed.

(a) component: electroconductive particle

(a) A component is a component used in order to improve the heat dissipation in a die-bonding film. (a) As a component, For example, Metal particles, such as a nickel particle, a copper particle, a silver particle, an aluminum particle; carbon particles such as carbon black particles; fibrous carbon particles such as carbon nanotubes; and particle|grains which coat|covered the surface of core particles, such as a metal particle and a resin particle, with the layer which consists of an electroconductive material, etc. are mentioned. These may be used individually by 1 type or in combination of 2 or more type. Among these, (a) component may be metal particle|grains or the metal-coated metal particle which coat|covered the surface of the metal particle with the metal layer.

One aspect of the component (a) may be a metal particle composed of a metal having an electrical conductivity (0°C) of 40×10 ⁶ S/m or more. The metal particle may be a metal particle comprised from one type of metal, or the metal-coated metal particle comprised from two or more types of metals may be sufficient as it. By using such a metal particle, the heat dissipation property in a die-bonding film can be improved further. Examples of the metal having an electrical conductivity (0°C) of 40×10 ⁶ S/m or more include gold (49×10 ⁶ S/m), silver (67×10 ⁶ S/m), and copper (65×10 ⁶ ). S/m) and the like. The electrical conductivity (0°C) may be 45×10 ⁶ S/m or more or 50×10 ⁶ S/m or more. That is, it is preferable that the metal particle is comprised from silver and/or copper.

The component (a) may be conductive particles having an electrical conductivity (0°C) of 40×10 ⁶ S/m or more, 45×10 ⁶ S/m or more, or 50×10 ⁶ S/m or more.

(a) One aspect of the component may be a metal particle composed of a metal having a thermal conductivity (20°C) of 250 W/m·K or more. The metal particle may be a metal particle comprised by 1 type of metal, and the metal-coated metal particle comprised by 2 or more types of metal may be sufficient as it. By using such a metal particle, the heat dissipation property in a die-bonding film can be improved further. Examples of the metal having a thermal conductivity (20° C.) of 250 W/m·K or more include gold (295 W/m·K), silver (418 W/m·K), copper (372 W/m·K), and the like. . The thermal conductivity (20°C) may be 300 W/m·K or more or 350 W/m·K or more. That is, it is preferable that the metal particle is comprised from silver and/or copper.

The component (a) may be conductive particles having a thermal conductivity (20° C.) of 250 W/m·K or more, 300 W/m·K or more, or 350 W/m·K or more.

Among these, the component (a) is excellent in electrical conductivity and thermal conductivity, and since it is difficult to be oxidized, a metal particle having silver on the surface may be sufficient, and more specifically, the surface of a silver particle or a copper particle is made of silver. The coat|covered silver-coated copper particle (silver-coated copper powder) may be sufficient. The silver particles and the silver-coated copper particles (silver-coated copper powder) may have an electrical conductivity (0°C) of 50×10 ⁶ S/m or more, and a thermal conductivity (20°C) of 350 W/m·K or more.

(a) The shape in particular of a component is not restrict|limited, For example, although flake shape, a spherical shape, etc. may be sufficient, it is preferable that the shape of (a) component is spherical. (a) If the shape of the component is spherical, a die-bonding film having a predetermined surface roughness tends to be easily obtained even without physical smoothing treatment.

(a) The average particle diameter of a component may be 0.01-10 micrometers. If the average particle diameter of the component (a) is 0.01 μm or more, the viscosity increase when the adhesive varnish is produced is prevented, and the desired amount of the component (a) can be contained in the die bonding film, and the die bonding film There exists a tendency that wettability with respect to a complex is ensured and more favorable adhesiveness can be exhibited. (a) When the average particle diameter of a component is 10 micrometers or less, it is excellent in film formability, and there exists a tendency which heat dissipation property can be improved more by addition of electroconductive particle. Moreover, by setting it as such a range, the thickness of a die-bonding film can be made thinner, and while a semiconductor chip can be laminated|stacked further, generation|occurrence|production of the chip crack by pushing out electroconductive particle from a die-bonding film is prevented. tend to be able to (a) The average particle diameter of the component may be 0.1 µm or more, 0.5 µm or more, 1.0 µm or more, or 1.5 µm or more, and 8.0 µm or less, 7.0 µm or less, 6.0 µm or less, 5.0 µm or less, 4.0 µm or less, or 3.0 μm or less. (a) If the average particle diameter of the component is 5.0 µm or less, a die-bonding film having a predetermined surface roughness tends to be easily obtained even without physical smoothing treatment. In addition, the average particle diameter of (a) component means the particle diameter (D50) when the ratio (volume fraction) with respect to the volume of the whole (a) component is ₅₀ %. The average particle diameter (D ₅₀ ) of the component (a) is obtained by measuring a suspension obtained by suspending the component (a) in water by a laser scattering method using a laser scattering particle size measuring apparatus (eg, Microtrac). can

(a) component is a spherical particle, and it is preferable that the average particle diameter is 5.0 micrometers or less.

(a) Content of component is 75 mass % or more on the basis of whole quantity of a die-bonding film. (a) When content of a component is 75 mass % or more on the basis of the whole quantity of a die-bonding film, the thermal conductivity of a die-bonding film can be improved, As a result, heat dissipation can be improved. (a) Content of component may be 77 mass % or more, 80 mass % or more, 83 mass % or more, or 85 mass % or more on the basis of the whole quantity of a die-bonding film. Although the upper limit in particular of content of (a) component is not restrict|limited, 95 mass % or less, 92 mass % or less, or 90 mass % or less may be sufficient based on the whole quantity of a die-bonding film.

(a) Content of component may be 300 mass parts or more, 400 mass parts or more, 500 mass parts or more, or 550 mass parts or more with respect to 100 mass parts of components other than (a) component of a die-bonding film. If the content of the component (a) is 300 parts by mass or more with respect to 100 parts by mass of the total amount of components other than the component (a) of the die-bonding film, the thermal conductivity of the die-bonding film can be improved, and, as a result, heat dissipation can Although the upper limit of content of (a) component is not specifically limited, 1900 mass parts or less, 1200 mass parts or less, 1000 mass parts or less, or 900 with respect to 100 mass parts of components other than (a) component of a die-bonding film. It may be less than a mass part.

(b) component: thermosetting resin

The component (b) is a component having a property of being cured by forming a three-dimensional bond between molecules by heating or the like, and is a component showing an adhesive action after curing. (b) An epoxy resin may be sufficient as a component. (b) The component may contain the epoxy resin liquid at 25 degreeC. An epoxy resin can be used without a restriction|limiting in particular, as long as it has an epoxy group in a molecule|numerator. The epoxy resin may have two or more epoxy groups in a molecule|numerator.

Examples of the epoxy resin include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, phenol novolak epoxy resin, cresol novolak epoxy resin, bisphenol A novolak epoxy resin, bisphenol F Novolak-type epoxy resin, stilbene-type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenolmethane-type epoxy resin, biphenyl-type epoxy resin, xylylene-type epoxy resin, biphenyl aralkyl-type epoxy resin and diglycidyl ether compounds of polycyclic aromatics such as , naphthalene-type epoxy resins, dicyclopentadiene-type epoxy resins, polyfunctional phenols and anthracene. These may be used individually by 1 type or in combination of 2 or more type. Among these, a bisphenol-type epoxy resin or a cresol novolak-type epoxy resin may be sufficient as an epoxy resin from viewpoints, such as heat resistance of hardened|cured material.

(b) The component may contain the epoxy resin liquid at 25 degreeC. When (b) component contains such an epoxy resin, there exists a tendency for the die-bonding film which has a predetermined|prescribed surface roughness to be easy to be obtained. Moreover, even in the case of performing a physical smoothing process, there exists a tendency which can be performed under milder conditions. As a commercial item of the epoxy resin liquid at 25 degreeC, EXA-830CRP (trade name, manufactured by DIC Corporation), YDF-8170C (trade name, Nittetsu Chemicals & Materials Co., Ltd.) etc. are mentioned, for example.

Although the epoxy equivalent in particular of an epoxy resin is not restrict|limited, 90-300 g/eq, 110-290 g/eq, or 110-290 g/eq may be sufficient. (A) When the epoxy equivalent of component exists in such a range, there exists a tendency for it easy to ensure the fluidity|liquidity of the adhesive composition at the time of forming a die-bonding film, maintaining the bulk strength of a die-bonding film.

(b) Content of component may be 0.1 mass % or more, 1 mass % or more, 2 mass % or more, or 3 mass % or more, 15 mass % or less, 12 mass % or less based on the whole quantity of a die-bonding film. , 10 mass % or less, or 8 mass % or less may be sufficient.

When the component (b) contains a liquid epoxy resin at 25° C., the mass ratio of the epoxy resin to the component (b) (mass of the epoxy resin/total mass of the component (b)) is 10 to 100%, 40-100%, 60%-100%, or 80%-100% may be sufficient. (b) when the component contains a liquid epoxy resin at 25° C., the content of the epoxy resin is 1% by mass or more, 2% by mass or more, 3% by mass or more, based on the total amount of the die-bonding film, or 4 mass % or more may be sufficient. 15 mass % or less, 12 mass % or less, 10 mass % or less, or 8 mass % or less may be sufficient as content of the said epoxy resin.

(c) component: curing agent

(c) The phenol resin which can become a hardening|curing agent of an epoxy resin may be sufficient as a component. A phenol resin can be used without a restriction|limiting in particular, if it has a phenolic hydroxyl group in a molecule|numerator. Examples of the phenol resin include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol and/or naphthol such as α-naphthol, β-naphthol, and dihydroxynaphthalene. Novolac-type phenol resin obtained by condensing or co-condensing a compound having an aldehyde group such as formaldehyde with a compound having an aldehyde group under an acidic catalyst, allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolac, phenol such as phenol; / or a phenol aralkyl resin synthesized from naphthol and dimethoxyparaxylene or bis(methoxymethyl)biphenyl, a naphthol aralkyl resin, a biphenyl aralkyl type phenol resin, a phenyl aralkyl type phenol resin, etc. are mentioned. . These may be used individually by 1 type or in combination of 2 or more type.

The hydroxyl equivalent of a phenol resin may be 40-300 g/eq, 70-290 g/eq, or 100-280 g/eq. When the hydroxyl equivalent of a phenol resin is 40 g/eq or more, the storage elastic modulus of a film tends to improve more, and when it is 300 g/eq or less, it becomes possible to prevent the trouble by generation|occurrence|production, such as foaming and outgassing.

The ratio of the epoxy equivalent of the epoxy resin as the component (b) and the hydroxyl equivalent of the phenol resin as the component (c) (the epoxy equivalent of the epoxy resin as the component/hydroxyl equivalent of the phenol resin as the component (c)) is the curable From a viewpoint, 0.30/0.70-0.70/0.30, 0.35/0.65-0.65/0.35, 0.40/0.60-0.60/0.40, or 0.45/0.55-0.55/0.45 may be sufficient. There exists a tendency for more sufficient sclerosis|hardenability to be obtained as the said equivalence ratio is 0.30/0.70 or more. When the equivalence ratio is 0.70/0.30 or less, it is possible to prevent the viscosity from becoming excessively high, and more sufficient fluidity can be obtained.

(c) Content of component may be 0.1 mass % or more, 1 mass % or more, 2 mass % or more, or 3 mass % or more, 15 mass % or less, 12 mass % or less on the basis of the whole quantity of a die-bonding film. , 10 mass % or less, or 8 mass % or less may be sufficient.

(d) component: elastomer

(d) Examples of the component include polyimide resin, acrylic resin, urethane resin, polyphenylene ether resin, polyether imide resin, phenoxy resin, and modified polyphenylene ether resin. there is. (d) Components are these resins, and what has a crosslinkable functional group may be sufficient as them, and the acrylic resin which has a crosslinkable functional group may be sufficient as them. Here, an acrylic resin means the polymer containing the structural unit derived from (meth)acrylic acid ester. The polymer containing the structural unit derived from the (meth)acrylic acid ester which has crosslinkable functional groups, such as an epoxy group, alcoholic or phenolic hydroxyl group, and a carboxy group, may be sufficient as an acrylic resin as a structural unit. Moreover, acrylic rubber, such as a copolymer of (meth)acrylic acid ester and acrylonitrile, may be sufficient as an acrylic resin. These may be used individually by 1 type or in combination of 2 or more type.

As a commercial item of an acrylic resin, For example, SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, HTR-860P-3, HTR-860P-3CSP, HTR-860P-3CSP-3DB ( All are made by Nagase Chemtex Co., Ltd.) and the like.

(d) The glass transition temperature (Tg) of component may be -50-50 degreeC or -30-20 degreeC. When the Tg of the acrylic resin is -50 DEG C or higher, the tackability of the die-bonding film is lowered, and therefore, the handleability tends to be further improved. When Tg of an acrylic resin is 50 degrees C or less, there exists a tendency which can more fully ensure the fluidity|liquidity of the adhesive agent composition at the time of forming a die-bonding film. Here, the glass transition temperature (Tg) of component (d) means the value measured using DSC (thermal differential scanning calorimeter) (For example, the Rigaku make, brand name: Thermo Plus 2).

(d) 50,000-1.2 million, 100,000-1.2 million, or 300,000-900,000 may be sufficient as the weight average molecular weight (Mw) of a component. (d) When the weight average molecular weight of component is 50,000 or more, there exists a tendency for film-forming property to be more excellent. (d) When the weight average molecular weight of component is 1.2 million or less, there exists a tendency for the fluidity|liquidity of the adhesive composition at the time of forming a die-bonding film to be more excellent. In addition, a weight average molecular weight (Mw) is the value measured by gel permeation chromatography (GPC), and converted using the analytical curve by standard polystyrene.

(d) The measuring apparatus of the weight average molecular weight (Mw) of a component, measurement conditions, etc. are as follows, for example.

Pump: L-6000 (manufactured by Hitachi Seisakusho Co., Ltd.)

Column: Gelpack GL-R440 (manufactured by Hitachi Chemical Corporation), Gelpack GL-R450 (manufactured by Hitachi Chemical Corporation), and Gelpack GL-R400M (manufactured by Hitachi Chemical Corporation) (each 10.7 mm (diameter) x 300 mm ) connected in this order

Eluent: tetrahydrofuran (hereinafter referred to as "THF".)

Sample: A solution of 120 mg of sample dissolved in 5 mL of THF

Flow rate: 1.75 mL/min

(d) Content of component may be 0.1 mass % or more, 0.5 mass % or more, 1 mass % or more, or 2 mass % or more, 10 mass % or less, 8 mass % or less on the basis of the whole quantity of a die-bonding film , 6 mass % or less, or 5 mass % or less may be sufficient.

The die-bonding film 10 may further contain (e) a hardening accelerator.

(e) component: curing accelerator

When a die-bonding film contains (e) component, there exists a tendency which can make adhesiveness and connection reliability more compatible. (e) As a component, imidazole and its derivative(s), organophosphorus type compound, secondary amines, tertiary amines, quaternary ammonium salt etc. are mentioned, for example. These may be used individually by 1 type or in combination of 2 or more type. Among these, the imidazole and its derivative(s) may be sufficient as (e) component from a reactive viewpoint.

Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methyl. Midazole, etc. are mentioned. These may be used individually by 1 type or in combination of 2 or more type.

(e) Content of component may be 0.001-1 mass % on the basis of die-bonding film whole quantity. (e) When content of a component exists in such a range, there exists a tendency which can make adhesiveness and connection reliability more compatible.

The die-bonding film 10 may further contain a coupling agent, an antioxidant, a rheology control agent, a leveling agent, etc. as components other than (a) component - (e) component. Examples of the silane coupling agent include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3-(2-aminoethyl). ) aminopropyl trimethoxysilane, etc. are mentioned. Content of other components may be 0.01-3 mass % on the basis of die-bonding film whole quantity.

The die bonding film 10 shown in FIG. 1 can be produced by forming the adhesive composition containing said (a) component, and (b) component - (e) component and other components as needed in a film form. . Such a die-bonding film 10 can be formed by applying an adhesive composition to the support film 20 . The adhesive composition can be used as an adhesive varnish diluted with a solvent. When using an adhesive varnish, the die-bonding film 10 can be formed by apply|coating an adhesive varnish to the support film 20, and heating-drying and removing a solvent.

A solvent in particular will not be restrict|limited, if it can melt|dissolve components other than (a) component. As a solvent, For example, aromatic hydrocarbons, such as toluene, xylene, mesitylene, cumene, p-cymene; aliphatic hydrocarbons such as hexane and heptane; Cyclic alkanes, such as methylcyclohexane; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonate esters such as ethylene carbonate and propylene carbonate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. These may be used individually by 1 type or in combination of 2 or more type. Among these, from a viewpoint of solubility and a boiling point, toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, or cyclohexanone may be sufficient as a solvent. The solid component concentration in the adhesive varnish may be 10-80 mass % based on the total mass of the adhesive varnish.

An adhesive varnish can be prepared by mixing and kneading|mixing (a) component - (e) component, another component, and a solvent. In addition, the order in particular of mixing of each component and kneading|mixing is not restrict|limited, It can set suitably. Mixing and kneading can be performed by combining suitably a dispersion machine, such as a normal stirrer, a grinder, a 3-roll, a ball mill, and a bead mill. After preparing the adhesive varnish, you may remove the bubble in a varnish by vacuum deaeration etc.

There is no restriction|limiting in particular as the support film 20, For example, films, such as polytetrafluoroethylene, polyethylene, a polypropylene, polymethylpentene, a polyethylene terephthalate, a polyimide, are mentioned. The support film may be subjected to a mold release treatment. The thickness of the support film 20 may be, for example, 10-200 micrometers or 20-170 micrometers.

As a method of applying the adhesive varnish to the support film 20, a known method can be used, for example, a knife coat method, a roll coat method, a spray coat method, a gravure coat method, a bar coat method, a curtain coat method, etc. can be heard Although there will be no restriction|limiting in particular as long as the conditions of heat-drying are conditions in which the used solvent fully volatilizes, For example, 0.1 to 90 minutes may be sufficient at 50-200 degreeC.

Although the thickness of the die-bonding film 10 can be suitably adjusted according to a use, 3-200 micrometers may be sufficient, for example. When the thickness of the die-bonding film 10 is 3 µm or more, the adhesive force tends to be sufficient, and when it is 200 µm or less, the heat dissipation tends to be sufficient. The thickness of the die-bonding film 10 may be 5-100 micrometers or 10-75 micrometers from a viewpoint of adhesive force and thickness reduction of a semiconductor device.

In the die-bonding film 10, the surface roughness of the 1st surface 10A is 1.0 micrometer or less, and the surface roughness of the 2nd surface 10B is 1.0 micrometer or less. Here, although the 1st surface 10A and the 2nd surface 10B can be determined arbitrarily, based on the content of the dicing and die-bonding integrated film mentioned later, in this specification, on the adhesive layer of a dicing tape The surface disposed on the first surface 10A (that is, the surface opposite to the surface in contact with the support film 20 of the die-bonding film 10) is the first surface 10A, the support film 20 of the die-bonding film 10 The surface in contact is described below as the second surface 10B. In addition, in this specification, surface roughness means arithmetic mean roughness Ra (JIS B 0601-2001), and "arithmetic mean roughness Ra" can be measured by the method as described in an Example, for example. In addition, 50-100 times may be sufficient as a measurement magnification.

When the second surface 10B is formed by a manufacturing method in which an adhesive varnish is applied to the support film 20 and the solvent is removed by heat drying, usually, regardless of the components contained in the adhesive varnish, the surface of the surface The roughness tends to be 1.0 µm or less. On the other hand, when the first surface 10A is formed by a manufacturing method in which an adhesive varnish is applied to the support film 20 and the solvent is removed by heating and drying, usually, there is a tendency to be affected by the components contained in the adhesive varnish. there is. 1st surface 10A can adjust the surface roughness of the said surface to 1.0 micrometer or less by using (a) component of particle|grains and/or spherical particle|grains with an average particle diameter of 5.0 micrometers or less, for example. Moreover, when the surface roughness of 10 A of 1st surfaces exceeds 1.0 micrometer, the surface roughness can be adjusted to 1.0 micrometer or less by performing a physical smoothing process, for example.

The smoothing treatment can be performed, for example, by pressing the first surface 10A of the die-bonding film 10 through a polyethylene film (PE film), a polyethylene terephthalate film (PET film), or the like. In this case, you may carry out, heating the die-bonding film 10. Pressing can be performed using a rubber roll, a metal roll, etc., for example. The load at the time of pressing may be 0.01-3.0 MPa or 0.3-1.0 MPa. When the pressing load is 0.01 MPa or more, a sufficient smoothing effect tends to be obtained. The heating temperature at the time of pressing may be room temperature (20 degreeC) - 200 degreeC or 50 degreeC - 140 degreeC. If the heating temperature at the time of pressing is 200 degrees C or less, there exists a tendency which can suppress that the hardening reaction of the die-bonding film 10 advances. In addition, the smoothing process can become possible to perform on milder conditions by including the epoxy resin liquid at 25 degreeC in (a) component in a predetermined range.

It is preferable that the surface roughness of the 1st surface 10A is larger than the surface roughness of the 2nd surface 10B. By applying such a die-bonding film 10 to a dicing and die-bonding integrated film, the adhesion between the die-bonding film and the adhesive layer (dicing tape) at the time of dicing is more excellent, thereby suppressing chip flying, etc. tends to be

The surface roughness of the 1st surface 10A is 1.0 micrometer or less from a viewpoint of preventing the fall of the adhesiveness by surface roughness, For example, 0.9 micrometer or less, 0.8 micrometer or less, or 0.75 micrometer or less may be sufficient. The surface roughness of the first surface 10A is 0.25 µm or more, 0.3 µm or more, 0.4 µm or more, 0.5 µm or more, 0.6 µm or more; Or 0.65 micrometer or more may be sufficient. From the same viewpoint, the surface roughness of the second surface 10B may be, for example, 0.9 µm or less, 0.8 µm or less, 0.7 µm or less, 0.6 µm or less, or less than 0.65 µm, 0.25 µm or more, 0.3 µm or more, 0.4 µm or more, or 0.45 µm or more may be sufficient.

The thermal conductivity (25 degreeC) in the die-bonding film 10 may be 1.6 W/m*K or more. When the thermal conductivity in the die-bonding film 10 is 1.6 W/m·K or more, the dicing die-bonding integrated film tends to have more excellent heat dissipation properties. The thermal conductivity in the die-bonding film may be 1.7 W/m·K or more, 2.0 W/m·K or more, or 2.3 W/m·K or more. Although the upper limit in particular of the thermal conductivity in the die-bonding film 10 is not restrict|limited, 30 W/m*K or less may be sufficient. In addition, in this specification, "thermal conductivity" can be calculated by the method described in an Example, for example.

[Dicing and die-bonding integrated film]

2 : is a schematic sectional drawing which shows one Embodiment of a dicing die-bonding integrated film. The dicing and die-bonding integrated film 100 shown in FIG. 2 includes a dicing tape 50 having a substrate 40 and an adhesive layer 30 provided on the substrate 40, a first surface 10A, and It has a second surface 10B opposite to the first surface 10A, and is disposed on the adhesive layer 30 of the dicing tape 50 so that the adhesive layer 30 and the first surface 10A are in contact with each other. It is provided with a die-bonding film (10). In the dicing die-bonding integrated film 100 , the support film 20 may be provided on the second surface 10B of the die-bonding film 10 .

As the base material 40 in the dicing tape 50, for example, plastic films, such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film. and the like. Moreover, the base material 40 may be surface-treated, such as primer application|coating, UV treatment, a corona discharge treatment, a grinding|polishing process, and an etching process, as needed.

The adhesive layer 30 may consist of an adhesive used in the field of a dicing tape, may consist of a pressure-sensitive adhesive, and may consist of an ultraviolet curing adhesive. When the adhesive layer 30 is made of a UV-curable adhesive, the adhesive layer 30 may have a property of reducing adhesiveness by irradiating UV rays.

The dicing die-bonding integrated film 100 is prepared by preparing a dicing tape 50 and a die-bonding film 10, and the first surface 10A of the die-bonding film 10 is applied to the dicing tape 50. It can be produced by sticking to the adhesion layer 30 . At this time, when the surface roughness of the 1st surface 10A exceeds 1.0 micrometer, the dicing die-bonding integrated film 100 may not be formed.

In the dicing die-bonding integrated film 100, the die-bonding film 10 contains the electroconductive particle of 75 mass % or more on the basis of the whole quantity of the die-bonding film. Moreover, in the die-bonding film 10, the surface roughness of the 1st surface 10A is 1.0 micrometer or less, and the surface roughness of the 2nd surface 10B is 1.0 micrometer or less. According to such a dicing and die-bonding integrated film, it has excellent heat dissipation, has excellent adhesiveness between the adhesive layer and the adhesive layer made of the die-bonding film, and when affixed to a semiconductor wafer, the adhesive layer made of the die-bonding film It can be a thing excellent in the adhesiveness of and a semiconductor wafer.

In the dicing die-bonding integrated film 100 , the surface roughness of the first surface 10A and the second surface 10B measured by the die-bonding film 10 tends to be maintained in that state. According to the tests of the present inventors, for example, ultraviolet irradiation to the dicing tape does not substantially affect the surface roughness of the first surface 10A of the die-bonding film 10 . Therefore, the 1st surface 10A and the 2nd surface 10B of the die-bonding film 10 are exposed from the dicing die-bonding integrated film 100, and the surface roughness of the exposed 1st surface and 2nd surface By measuring the surface roughness of the first surface and the second surface of the die-bonding film 10 can be obtained. When exposing the 1st surface 10A and the 2nd surface 10B, the dicing tape 50 and the support film 20 in the dicing die-bonding integrated film 100 at room temperature (20 degreeC) The first surface 10A and the second surface 10B may be exposed by peeling, and if necessary, the first surface 10A is transferred by laminating to a semiconductor wafer, a substrate or the like at about 40 to 80° C. ) and the second surface 10B may be exposed.

[Method for manufacturing semiconductor device (semiconductor package)]

3 is a schematic cross-sectional view showing an embodiment of a method for manufacturing a semiconductor device. 3(a), (b), (c), (d), (e), and (f) are cross-sectional views schematically showing each step. The manufacturing method of a semiconductor device is the process of sticking the 2nd surface 10B of the die-bonding film 10 (adhesive layer) of the said dicing and die-bonding integrated film 100 to the semiconductor wafer W (wafer ramie) Nate process, see Fig. 3 (a), (b)), semiconductor wafer W, die bonding film 10 (adhesive layer), and the process of separating the adhesive layer 30 into pieces (dicing process, 3 (c)) and, if necessary, the step of irradiating ultraviolet rays to the adhesive layer 30 (via the base material 40) (ultraviolet irradiation step, see Fig. 3 (d)), Picking up the semiconductor chip Wa (semiconductor element 60 including the adhesive piece) to which the die-bonding film piece 10a is adhered from the adhesive layer 30a (pick-up step, see Fig. 3(e)) and the die; A step of bonding the semiconductor element 60 with an adhesive piece to the support substrate 80 via the bonding film piece 10a (semiconductor element bonding step, see Fig. 3(f))) is provided.

<Wafer lamination process>

First, the dicing die-bonding integrated film 100 is disposed in a predetermined apparatus. Then, the second surface 10B of the die-bonding film 10 (adhesive layer) of the dicing and die-bonding integrated film 100 is affixed to the surface Ws of the semiconductor wafer W (FIG. 3 (( see a), (b)). It is preferable that the circuit surface of the semiconductor wafer W is provided in the surface on the opposite side to the surface Ws.

<Dicing process>

Next, the semiconductor wafer W and the die-bonding film 10 (adhesive layer) are diced (see FIG. 3C ). At this time, a part of the adhesive layer 30 or all of the adhesive layer 30 and a part of the base material 40 may be diced. In this way, the dicing die-bonding integrated film 100 also functions as a dicing sheet.

<Ultraviolet irradiation process>

When the pressure-sensitive adhesive layer 30 is made of an ultraviolet-curable pressure-sensitive adhesive, the pressure-sensitive adhesive layer 30 may be irradiated with ultraviolet rays (via the base material 40) as needed (see Fig. 3(d)). ). In the case of the UV-curable adhesive, the adhesive layer 30 may be cured to reduce the adhesive force between the adhesive layer 30 and the die-bonding film 10 (adhesive layer). In ultraviolet irradiation, it is preferable to use the ultraviolet-ray with a wavelength of 200-400 nm. UV irradiation conditions, it is preferable to adjust the illuminance and the irradiation amount in the range of 30-240 mW/cm ² and 50-500 mJ/cm ² , respectively.

<Pick-up process>

Next, by expanding the base material 40, the semiconductor element 60 including the adhesive piece pushed up by the needle 72 from the base 40 side while the diced semiconductor element 60 including the adhesive piece is spaced apart from each other. is sucked with the suction collet 74 to be picked up from the adhesive layer 30a (see Fig. 3(e)). Moreover, the semiconductor element 60 with an adhesive bond piece has the semiconductor chip Wa and the die-bonding film piece 10a. As for the semiconductor chip Wa, the semiconductor wafer W is divided into pieces by dicing, and as for the die bonding film piece 10a, the die bonding film 10 is divided into pieces by dicing. In addition, as for the adhesive layer 30a, the adhesive layer 30 is divided into pieces by dicing. The adhesive layer 30a may remain on the substrate 40 when the semiconductor element 60 including the adhesive piece is picked up. In a pick-up process, although it is not necessarily necessary to expand the base material 40, by expanding the base material 40, pick-up property can be improved more.

The amount of pushing up by the needle 72 can be appropriately set. Moreover, from a viewpoint of ensuring sufficient pick-up property also for an ultra-thin wafer, you may perform, for example, two-stage or three-stage pushing-up. Moreover, you may pick up the semiconductor element 60 with an adhesive bond piece by a method other than the method of using the suction collet 74.

<Semiconductor device bonding process>

After picking up the semiconductor element 60 with an adhesive piece, the semiconductor element 60 with an adhesive piece is adhere|attached to the support substrate 80 via the die-bonding film piece 10a by thermocompression bonding (FIG. 3). see (f)). You may adhere|attach the semiconductor element 60 with a some adhesive bond piece to the support substrate 80. As shown in FIG.

The manufacturing method of a semiconductor device includes the process of electrically connecting the semiconductor chip Wa and the support substrate 80 by wire bonding as needed, and a resin sealing material on the surface 80A of the support substrate 80. You may further comprise the process of resin-sealing the semiconductor chip Wa using it.

4 is a schematic cross-sectional view showing an embodiment of a semiconductor device. The semiconductor device 200 shown in FIG. 4 can be manufactured by passing through the said process. In the semiconductor device 200 , the semiconductor chip Wa and the supporting substrate 80 may be electrically connected by a wire bond 70 . In the semiconductor device 200 , the semiconductor chip Wa may be resin-sealed using the resin sealing material 92 on the surface 80A of the support substrate 80 . Solder balls 94 may be formed on the surface opposite to the front surface 80A of the support substrate 80 for electrical connection with an external substrate (motherboard).

Example

Hereinafter, although an Example demonstrates this indication, this indication is not limited to these Examples.

<Preparation of adhesive varnish>

In the symbols and composition ratios (unit: parts by mass) shown in Table 1, cyclohexanone is added to (b) an epoxy resin as a thermosetting resin, (c) a phenol resin as a curing agent, and (d) an acrylic rubber as an elastomer, followed by stirring. A mixture was obtained. After each component melt|dissolved, (a) electroconductive particle was added to the mixture, it stirred using the disposer blade, and it disperse|distributed until each component became uniform. Then, adhesive varnishes A-E were obtained by adding (e) a hardening accelerator and dispersing until each component became uniform.

In addition, the symbol of each component in Table 1 means the following.

(a) conductive particles

20% Ag-Cu-MA (manufactured by Fukuda Kinzoku Hakuhun Kogyo Co., Ltd., product name of silver-coated copper powder, shape: flake shape, average particle size (laser 50% particle size (D ₅₀ )): 6.0 to 8.8 μm)

・AO-UCI-9 (DOWA Electronics Co., Ltd., product name of silver-coated copper powder, shape: spherical, average particle size (laser 50% particle size (D ₅₀ )): 2.3 μm)

(b) thermosetting resin

・N500P-10 (trade name, manufactured by DIC Corporation, bisphenol type epoxy resin, epoxy equivalent: 203 g/eq)

・YDCN-700-10 (trade name, manufactured by Nittetsu Chemical & Materials Co., Ltd., cresol novolak type epoxy resin, epoxy equivalent: 215 g/eq)

EXA-830CRP (trade name, manufactured by DIC Corporation, bisphenol type epoxy resin, epoxy equivalent: 159 g/eq, liquid at 25°C)

(c) hardener

·MEH-7800M (trade name, manufactured by Meiwa Kasei Corporation, phenolic resin, viscosity (150°C): 0.31 to 0.43 Pa·s (3.1 to 4.3 poise), hydroxyl equivalent: 175 g/eq)

·HE-100C-30 (trade name, manufactured by Air Water Co., Ltd., phenyl aralkyl type phenol resin, viscosity (150°C): 0.27 to 0.41 Pa·s (2.7 to 4.1 poise), hydroxyl equivalent: 170 g/eq)

(d) elastomers

·HTR-860P-3 (trade name, manufactured by Nagase Chemtex Co., Ltd., glycidyl group-containing acrylic rubber, weight average molecular weight: 1 million, Tg: -7°C)

(e) curing accelerator

Curesol 2PZ-CN (trade name, manufactured by Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole)

[Table 1]

(Example 1)

<Production of die bonding film>

Adhesive varnish B was used for preparation of a die-bonding film. The vacuum-defoamed adhesive varnish B was apply|coated on the polyethylene terephthalate (PET) film (38 micrometers in thickness) which performed the release process which is a support film. The applied varnish was heat-dried at 90 degreeC for 5 minutes, then 140 degreeC for 5 minutes in two steps, and the die-bonding film of 20 micrometers in thickness in a B-stage state was produced on the support film. The surface on the opposite side to the support film of the produced die-bonding film is a 1st surface, and the surface which is in contact with the support film of a die-bonding film is a 2nd surface. The first surface of the produced die-bonding film was pressed through a PET film using a rubber roll under the conditions of a temperature of 140° C., a pressure of 0.5 MPa, and a speed of 0.1 m/min to perform a smoothing treatment on the surface, in Example A die-bonding film of 1 was obtained.

<Measurement of surface roughness>

About the surface of the die-bonding film of Example 1, the measurement of surface roughness was performed. Surface roughness (arithmetic mean roughness Ra (JIS B 0601-2001)) was calculated|required by measuring by 50 times magnification using the shape measuring laser microscope VK-X100 (made by Keyence Corporation). The surface roughness of the surface (1st surface) on the opposite side to the support film of a die-bonding film was measured in that state from the point where the surface is exposed. The surface roughness of the surface (2nd surface) in contact with the support film of a die-bonding film was measured, after peeling a support film and exposing the surface. A result is shown in Table 2.

<Measurement of thermal conductivity>

(Production of laminate)

Using Leon13DX (manufactured by Lamy Corporation), the die-bonding film was laminated at 70°C to obtain a laminate having a thickness of 100 µm or more.

(Preparation of measurement sample)

The laminate was given a thermal history at 110°C for 30 minutes and at 175°C for 180 minutes to obtain a measurement sample.

(Measurement of thermal conductivity)

The thermal conductivity of the measurement sample was computed with the following formula. A result is shown in Table 2.

Thermal conductivity (W/m·K) = specific heat (J/kg·K) × thermal diffusivity (m ² /s) × specific gravity (kg/m ³ )

In addition, specific heat, thermal diffusivity, and specific gravity were measured with the following method. That thermal conductivity becomes high means that it is more excellent in heat dissipation.

(Measurement of specific heat (25°C))

・Measurement device: Differential scanning calorimetry device (manufactured by PerkinElmer Japan, trade name: DSC8500)

・Reference material: sapphire

·Temperature increase rate: 10°C/min

・Temperature rise temperature range: 20℃~100℃

(Measurement of thermal diffusivity)

・Measuring device: Thermal diffusivity measuring device (manufactured by NETZSCH Japan, trade name: LFA467 HyperFlash)

・Processing of the measurement sample: Blackening treatment of both sides of the measurement sample with carbon spray

・Measuring method: Xenon flash method

・Measured ambient temperature: 25℃

(Measurement of specific gravity)

・Measuring device: Electronic hydrometer (manufactured by Alfa Mirage Co., Ltd., brand name: SD200L)

・Measurement method: Archimedes method

<Production of dicing and die-bonding integrated film>

Implementation of providing a die-bonding film and a dicing tape by preparing a dicing tape having a substrate and an adhesive layer, and affixing the first surface of the die-bonding film of Example 1 to the adhesive layer of the dicing tape at 25° C. The dicing and die-bonding integrated film of Example 1 was obtained.

(Example 2)

In the production of the die-bonding film, the adhesive varnish C was used, and the surface was smoothed by pressing using a rubber roll under the conditions of a temperature of 60° C., a pressure of 0.5 MPa, and a speed of 0.1 m/min. Examples It carried out similarly to 1, and obtained the die-bonding film of Example 2. About the die-bonding film of Example 2, it carried out similarly to Example 1, and measured the surface roughness and thermal conductivity. A result is shown in Table 2. Moreover, it carried out similarly to Example 1, and the dicing die-bonding integrated film of Example 2 was obtained.

(Example 3)

Adhesive varnish D was used for preparation of a die-bonding film, except having not performed a smoothing process, it carried out similarly to Example 1, and obtained the die-bonding film of Example 3. About the die-bonding film of Example 3, it carried out similarly to Example 1, and measured the surface roughness and thermal conductivity. A result is shown in Table 2. Moreover, it carried out similarly to Example 1, and the dicing die-bonding integrated film of Example 3 was obtained.

(Example 4)

Adhesive varnish E was used for preparation of a die-bonding film, except having not performed a smoothing process, it carried out similarly to Example 1, and obtained the die-bonding film of Example 4. About the die-bonding film of Example 4, it carried out similarly to Example 1, and measured the surface roughness and thermal conductivity. A result is shown in Table 2. Moreover, it carried out similarly to Example 1, and the dicing die-bonding integrated film of Example 4 was obtained.

(Comparative Example 1)

The adhesive varnish A was used for preparation of the die-bonding film, and except having not performed the smoothing process, it carried out similarly to Example 1, and obtained the die-bonding film of the comparative example 1. About the die-bonding film of Comparative Example 1, it carried out similarly to Example 1, and measured the surface roughness and thermal conductivity. A result is shown in Table 2. Moreover, it carried out similarly to Example 1, and the dicing die-bonding integrated film of Comparative Example 1 was obtained.

(Comparative Example 2)

Except not having performed the smoothing process, it carried out similarly to Example 1, and obtained the die-bonding film of the comparative example 2. About the die-bonding film of Comparative Example 2, it carried out similarly to Example 1, and measured the surface roughness and thermal conductivity. A result is shown in Table 2. In addition, an attempt was made to produce a dicing and die-bonding integrated film, but the adhesion between the first surface of the die-bonding film and the adhesive layer was not sufficient. couldn't

(Comparative Example 3)

The die-bonding film of Comparative Example 2 was used for preparation of the dicing die-bonding integrated film of Comparative Example 3. First, in the die-bonding film of Comparative Example 2, the first surface of the die-bonding film was transferred to another support film (a polyethylene terephthalate (PET) film (thickness 38 µm) that was subjected to a release treatment). Next, the support film on the second surface side was peeled off, and the exposed second surface was affixed at 25° C. to the same pressure-sensitive adhesive layer of a dicing tape as in Comparative Example 2 to obtain the dicing and die-bonding integrated film of Comparative Example 3 got it

<Evaluation of the adhesiveness in the dicing process>

Examples 1-4 and Comparative Examples 1 and 3 of the dicing and die-bonding integrated films were prepared. Peel the supporting film of the dicing and die-bonding integrated film, and use a film laminator (manufactured by Deikoku Tapping Systems Co., Ltd.) to apply the die-bonding film (adhesive layer) of the dicing and die-bonding integrated film to a semiconductor wafer with a thickness of 100 μm The test body was obtained by affixing to. After the test body is divided into pieces by dicing to a size of 2 mm × 2 mm, the test body is observed, and the adhesion between the die bonding film piece (adhesive layer) and the adhesive layer and the die bonding film piece (adhesive layer) and the semiconductor wafer are tested. evaluated. Dicing was performed by a step-cut method using two blades, and dicing blades SD4000-BB and SD4000-DD were used. In the step cut method, dicing was performed to a position of 50 µm in depth of the semiconductor wafer by the first cut, and then dicing was performed to a position of 20 µm in depth of the base material of the dicing tape by the second cut. The dicing conditions were a blade rotation speed of 4000 rpm and a cutting speed of 30 mm/sec. After dicing, between the die-bonding film piece (adhesive agent layer) and the adhesion layer was observed, and the thing without peeling evaluated "A" and the thing with peeling evaluated as "B". The die-bonding film piece (adhesive layer) and the semiconductor wafer were observed, and the thing without peeling was evaluated as "A", and the thing with peeling was evaluated as "B". A result is shown in Table 2.

[Table 2]

As shown in Table 2, the comparative example 1 which does not satisfy the requirement containing 75 mass % or more of electroconductive particle on the basis of the whole quantity of a die-bonding film did not have enough thermal conductivity. In Comparative Example 2, which does not satisfy the requirement that the surface roughness of the first surface is 1.0 µm or less, the die bonding film (adhesive layer) and the adhesive layer of the dicing tape cannot be produced to such an extent that a dicing die bonding integrated film cannot be produced. adhesion was not sufficient. Moreover, in the comparative example 3 which does not satisfy the requirement that the surface roughness of the 2nd surface is 1.0 micrometer or less, the adhesiveness of the die-bonding film piece (adhesive agent layer) and a semiconductor wafer was not enough. From these, both surfaces of a die-bonding film WHEREIN: It turns out that it is necessary to reduce surface roughness and to make it smooth. As a method of reducing surface roughness, as shown in Example 1, it became clear that it is effective to perform a smoothing process physically. Further, as shown in Example 2, (b) as a thermosetting resin, by increasing the content of the epoxy resin liquid at 25°C (for example, 2% by mass or more based on the total amount of the die-bonding film) , it was found that the conditions of the smoothing treatment could be made milder. Moreover, as shown in Examples 3 and 4, the average particle diameter of electroconductive particle is small, and by using a spherical thing, even if it did not perform a smoothing process, it became clear that it was possible to reduce the surface roughness of both surfaces of a die-bonding film.

From the above, the dicing and die-bonding integrated film having an adhesive layer and an adhesive layer according to one aspect of the present disclosure has excellent heat dissipation, excellent adhesion between the adhesive layer and the adhesive layer, and is adhered to a semiconductor wafer. WHEREIN: It was confirmed that it is excellent in the adhesiveness of an adhesive bond layer and a semiconductor wafer.

10… die bonding film
10A… first surface
10B… second surface
10a… die bonding film
20… support film
30, 30a... adhesive layer
40… write
50… dicing tape
60… Semiconductor element with adhesive piece
70… wire bond
72… You guys
74… suction collet
80… support substrate
92… resin sealant
94… solder ball
100… Dicing and die-bonding integrated film
200… semiconductor device

Claims (19)

A dicing tape having a substrate and an adhesive layer provided on the substrate;
A die-bonding film having a first surface and a second surface opposite to the first surface and disposed on the pressure-sensitive adhesive layer of the dicing tape so that the pressure-sensitive adhesive layer and the first surface are in contact with each other;
The die-bonding film contains 75% by mass or more of conductive particles based on the total amount of the die-bonding film,
The said die-bonding film WHEREIN: The dicing die-bonding integrated film whose surface roughness of the said 1st surface is 1.0 micrometer or less, and the surface roughness of the said 2nd surface is 1.0 micrometer or less. The method according to claim 1,
The dicing and die-bonding integrated film, wherein the surface roughness of the first surface is greater than the surface roughness of the second surface. The method according to claim 1 or 2,
A dicing die-bonding integrated film, wherein the first surface has a surface roughness of 0.25 µm or more. 4. The method according to any one of claims 1 to 3,
The thermal conductivity in the said die-bonding film is 1.6 W/m*K or more, The dicing die-bonding integrated film. 5. The method according to any one of claims 1 to 4,
The said electroconductive particle is a spherical dicing die-bonding integrated film. 6. The method of claim 5,
The dicing die-bonding integrated film whose average particle diameter of the said electroconductive particle is 3.0 micrometers or less. 7. The method according to any one of claims 1 to 6,
The said electroconductive particle is a dicing die-bonding integrated film whose thermal conductivity (20 degreeC) is electroconductive particle of 250 W/m*K or more. 8. The method according to any one of claims 1 to 7,
The dicing die-bonding integrated film, wherein the die-bonding film further contains a thermosetting resin, a curing agent, and an elastomer. 9. The method of claim 8,
The thermosetting resin contains an epoxy resin that is liquid at 25°C,
The content of the epoxy resin liquid at 25°C is 2% by mass or more based on the total amount of the die-bonding film, the dicing die-bonding integrated film. A step of affixing the second surface of the die-bonding film of the integrated dicing and die-bonding film according to any one of claims 1 to 9 to a semiconductor wafer;
separating the semiconductor wafer and the die-bonding film into pieces;
picking up the semiconductor chip to which the die-bonding film piece is attached from the dicing tape;
and a step of bonding the semiconductor chip to a support substrate via the die-bonding film piece. A die bonding film having a first surface and a second surface opposite the first surface, the die bonding film comprising:
Based on the total amount of the die-bonding film, containing 75% by mass or more of conductive particles,
The first surface has a surface roughness of 1.0 µm or less, and the second surface has a surface roughness of 1.0 µm or less. 12. The method of claim 11,
wherein the surface roughness of the first surface is greater than the surface roughness of the second surface. 13. The method according to claim 11 or 12,
The first surface has a surface roughness of 0.25 μm or more, a die-bonding film. 14. The method according to any one of claims 11 to 13,
The thermal conductivity in the said die-bonding film is 1.6 W/m*K or more, The die-bonding film. 15. The method according to any one of claims 11 to 14,
The said electroconductive particle is a spherical die-bonding film. 16. The method of claim 15,
The average particle diameter of the said electroconductive particle is 3.0 micrometers or less, The die-bonding film. 17. The method according to any one of claims 11 to 16,
The said electroconductive particle is a die-bonding film whose thermal conductivity (20 degreeC) is electroconductive particle of 250 W/m*K or more. 18. The method according to any one of claims 11 to 17,
A die-bonding film further comprising a thermosetting resin, a curing agent, and an elastomer. 19. The method of claim 18,
The thermosetting resin contains an epoxy resin that is liquid at 25°C,
The content of the epoxy resin liquid at 25°C is 2% by mass or more based on the total amount of the die-bonding film, the die-bonding film.

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