JP2023176508A - Manufacturing method of semiconductor device - Google Patents

Abstract

To provide a manufacturing method of a semiconductor device which can suppress a malfunction generated when curing an adhesive layer having a conductive particle and a thermosetting resin component.SOLUTION: A manufacturing method of a semiconductor device is disclosed. The manufacturing method of a semiconductor device comprises: a first curing step of heating a laminate 100 having a support member 80, an adhesive layer Da containing conductive particles and a thermosetting resin component and a semiconductor chip Wa in this order in the multi-stages being equal to or greater than two stages, and obtaining a first cured body 110 whose reaction rate of an adhesive layer Dc is 70-80%; and a second curing step of further heating the first cured body 110 and obtaining a second cured body 120 whose reaction rate of an adhesive layer Dcc exceeds 80%.SELECTED DRAWING: Figure 1

Description

The present disclosure relates to a method for manufacturing a semiconductor device.

A method for manufacturing a semiconductor device includes, for example, a die bonding process in which a semiconductor chip is fixed to a support member such as a lead frame using an adhesive layer, a first curing process in which the adhesive layer is heated and cured, and a semiconductor chip and A wire bonding process in which the support member is electrically connected using a bonding wire, and a second curing process in which the adhesive layer is further cured by heating the adhesive layer together with the sealing resin while covering the semiconductor chip with the sealing resin. A method is known that includes a step (for example, see Patent Document 1).

In recent years, devices called power semiconductor devices that perform power control and the like have become widespread. Power semiconductor devices tend to generate heat due to the supplied current, so excellent heat dissipation is required. Patent Document 2 discloses a film adhesive containing conductive particles and a dicing tape with a film adhesive (dicing/die bonding integrated film) that can be used as an adhesive layer.

Japanese Patent Application Publication No. 2013-053190 JP2016-103524A

By the way, according to studies by the present inventors, when an adhesive layer containing conductive particles and a thermosetting resin component is used in a method for manufacturing a semiconductor device, when the adhesive layer is cured, cracks occur in the adhesive layer, conductive particles and resin components separate within the adhesive layer, and warpage occurs in the support member and semiconductor chip in a laminate including the support member, adhesive layer, and semiconductor chip. It has been found that such problems may occur.

Therefore, an object of the present disclosure is to provide a method for manufacturing a semiconductor device that can suppress defects that occur when curing an adhesive layer containing conductive particles and a thermosetting resin component.

The present inventors conducted extensive studies to solve the above problems, and found that in the first curing step after the die bonding step, the adhesive layer is heated in two or more stages, and the adhesion of the first cured product is The reaction rate of the adhesive layer is within a predetermined range, and the reaction rate of the adhesive layer of the second cured product is within a predetermined range in the second curing process after the wire bonding process. The inventors have discovered that the problems that occur when curing can be suppressed, and have completed the invention of the present disclosure.

One aspect of the present disclosure relates to a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device includes heating a laminate including a support member, an adhesive layer containing conductive particles and a thermosetting resin component, and a semiconductor chip in this order in two or more stages to bond the product. A first curing step to obtain a first cured product in which the reaction rate of the adhesive layer is 70 to 80%, and a second curing step in which the first cured product is further heated and the reaction rate of the adhesive layer exceeds 80%. and a second curing step to obtain a cured body.

The first curing step may be a step of heating the laminate in a range of 100 to 160°C in two or more stages, including a step of heating the laminate in a range of 100°C or more and less than 140°C; It may be a multi-step heating process including a step of heating in a range of 140° C. or more and less than 160° C.

According to the present disclosure, there is provided a method for manufacturing a semiconductor device that can suppress defects that occur when curing an adhesive layer containing conductive particles and a thermosetting resin component.

FIG. 1 is a schematic cross-sectional view showing one embodiment of a method for manufacturing a semiconductor device, and FIGS. 1(a), (b), and (c) schematically show each step of the method for manufacturing a semiconductor device. FIG. FIG. 2 is a schematic sectional view showing one embodiment of a method for manufacturing a laminate, and FIGS. 2(a) and 2(b) are sectional views schematically showing each step of the method for manufacturing a laminate. FIG. 3 is a schematic cross-sectional view showing one embodiment of a method for manufacturing a laminate, and FIGS. 3(a), (b), and (c) schematically show each step of the method for manufacturing a laminate. FIG. FIG. 4 is a schematic cross-sectional view showing one embodiment of a semiconductor device.

Embodiments of the present disclosure will be described below with appropriate reference to the drawings. However, the present disclosure is not limited to the following embodiments. In the following embodiments, the constituent elements (including steps, etc.) are not essential unless otherwise specified. The sizes of the components in each figure are conceptual, and the relative size relationships between the components are not limited to those shown in each figure.

The same applies to the numerical values and their ranges in this disclosure, and they do not limit the present disclosure. In this specification, a numerical range indicated using "-" indicates a range that includes the numerical values written before and after "-" as the minimum and maximum values, respectively. In the numerical ranges described step by step in this specification, the upper limit value or lower limit value described in one numerical range may be replaced with the upper limit value or lower limit value of another numerical range described step by step. good. Further, in the numerical ranges described in this specification, the upper limit or lower limit of the numerical range may be replaced with the value shown in the Examples.

In this specification, the term "layer" includes not only a structure formed on the entire surface but also a structure formed on a part of the layer when observed in a plan view. In addition, in this specification, the term "process" does not only refer to an independent process, but also refers to a process that cannot be clearly distinguished from other processes, as long as the intended effect of the process is achieved. included.

As used herein, (meth)acrylate means acrylate or the corresponding methacrylate. The same applies to other similar expressions such as (meth)acryloyl group and (meth)acrylic copolymer.

In this specification, unless otherwise specified, the materials exemplified below may be used alone or in combination of two or more within the range applicable to the conditions. When there are multiple substances corresponding to each component, the content of each component means the total amount of the multiple substances, unless otherwise specified.

[Method for manufacturing semiconductor device]
FIG. 1 is a schematic cross-sectional view showing one embodiment of a method for manufacturing a semiconductor device. A method for manufacturing a semiconductor device includes heating a laminate 100 including a support member 80, an adhesive layer Da containing conductive particles and a thermosetting resin component, and a semiconductor chip Wa in this order in two or more stages. However, a first curing step is performed to obtain a first cured body 110 in which the reaction rate of the adhesive layer Dc is 70 to 80%, and the first cured body 110 is further heated so that the reaction rate of the adhesive layer Dcc is 70 to 80%. and a second curing step for obtaining a second cured body 120 of more than 80%. According to such a method of manufacturing a semiconductor device, it is possible to suppress problems that occur when curing an adhesive layer containing conductive particles and a thermosetting resin component.

<First curing step>
In this step, a laminate including a support member, an adhesive layer containing conductive particles and a thermosetting resin component, and a semiconductor chip in this order is heated in two or more stages, and the adhesive layer reacts. This is a step of obtaining a first cured product having a hardening ratio of 70 to 80%.

The laminate includes a support member, an adhesive layer containing conductive particles and a thermosetting resin component, and a semiconductor chip in this order. 2 and 3 are schematic cross-sectional views showing one embodiment of a method for manufacturing a laminate. The laminate 100 is produced, for example, by a step of preparing a dicing/die bonding integrated film 10 comprising a base layer 2a, an adhesive layer 2b, and a die bonding film D containing conductive particles and a thermosetting resin component. (preparation process) and a process of attaching the semiconductor wafer W to the die bonding film D of the dicing/die bonding integrated film 10 to produce the singulation laminate 20 (wafer lamination process, see FIG. 2(a)) A process (dicing process, FIG. 2(b)), and a step of bonding the semiconductor chip 60 with the adhesive layer to the support member 80 via the adhesive layer Da (die bonding film piece) (die bonding step, see FIG. 3(c)). It can be obtained by a manufacturing method comprising: The method for manufacturing the laminate 100 includes a step of irradiating the adhesive layer 2b with ultraviolet rays (via the base material layer 2a) between the dicing step and the die bonding step, if necessary. 3(a)) and the step of picking up the semiconductor chip Wa (semiconductor chip 60 with adhesive layer) to which the adhesive layer Da is attached from the adhesive layer 2ba (pick-up step, see FIG. 3(b)). You may also have more.

- Preparation Step In this step, a dicing/die bonding integrated film 10 including a base material layer 2a, an adhesive layer 2b, and a die bonding film D containing conductive particles and a thermosetting resin component is prepared. Note that the die bonding film refers to a film used for adhesion between a semiconductor chip and a support member or for adhesion between semiconductor chips. Moreover, the laminated film which has the base material layer 2a and the adhesive layer 2b provided on the base material layer 2a may be called "dicing film 2." Below, an example of a die bonding film will be described in detail.

The die bonding film D contains conductive particles (hereinafter sometimes referred to as "component (A)") and a thermosetting resin component (hereinafter sometimes referred to as "component (B)"). Component (B) includes a thermosetting resin (hereinafter sometimes referred to as "component (B1)"), a curing agent (hereinafter sometimes referred to as "component (B2)"), and an elastomer (hereinafter referred to as "component (B2)"). may also be referred to as "component (B3)"). The die bonding film D further contains a coupling agent (hereinafter sometimes referred to as "component (C)"), a curing accelerator (hereinafter sometimes referred to as "component (D)"), etc. Good too.

The die bonding film D may be in a semi-cured (B stage) state in which at least a portion thereof is cured, and then can be turned into a cured product (C stage) state by heat treatment.

(A) Component: Conductive particles The conductive particles as the (A) component are components for improving heat dissipation when the die bonding film is applied to a semiconductor device.

Examples of component (A) include particles containing metals such as aluminum, nickel, tin, bismuth, indium, zinc, iron, copper, silver, gold, palladium, and platinum. Component (A) may be conductive particles made of one kind of metal, or may be conductive particles made of two or more kinds of metals. The conductive particles composed of two or more types of metals may be metal-coated conductive particles in which the surface of the conductive particles is coated with a metal different from that of the conductive particles.

Component (A) may be conductive particles made of a metal having an electrical conductivity (0° C.) of 40×10 ⁶ S/m or more, for example. By using such component (A), heat dissipation properties can be further improved. Examples of metals with electrical conductivity (0°C) of 40×10 ⁶ S/m or higher include gold (49×10 ⁶ S/m), silver (67×10 ⁶ S/m), and copper (65× 10 ⁶ S/m), etc. The electrical conductivity (0° C.) may be 45×10 ⁶ S/m or more or 50×10 ⁶ S/m or more. That is, the component (A) is preferably conductive particles made of silver and/or copper.

Component (A) may be, for example, conductive particles made of a metal having a thermal conductivity (20° C.) of 250 W/m·K or more. By using such component (A), heat dissipation properties can be further improved. Examples of metals with thermal conductivity (20°C) of 250 W/m・K or more include gold (295 W/m・K), silver (418 W/m・K), copper (372 W/m・K), etc. Can be mentioned. The thermal conductivity (20° C.) may be 300 W/m·K or more or 350 W/m·K or more. That is, the component (A) is preferably conductive particles made of silver and/or copper.

Component (A) may be silver particles because it has excellent electrical conductivity and thermal conductivity and is resistant to oxidation. The silver particles may be, for example, particles made of silver (particles made of silver alone) or silver-coated metal particles in which the surface of metal particles (such as copper particles) is coated with silver. Examples of the silver-coated conductive particles include silver-coated copper particles. Component (A) may be particles composed of silver.

The silver particles as the component (A) are not particularly limited, but include, for example, silver particles produced by a reduction method (silver particles produced by a liquid phase (wet) reduction method using a reducing agent), silver particles produced by an atomization method. Examples include silver particles etc. The silver particles as component (A) may be silver particles produced by a reduction method.

In the liquid phase (wet) reduction method using a reducing agent, a surface treatment agent (lubricant) is usually added from the viewpoint of particle size control and prevention of aggregation and fusion. ) The surface of the silver particles produced by the reduction method is coated with a surface treatment agent (lubricant). Therefore, silver particles produced by the reduction method can also be said to be silver particles whose surface has been treated with a surface treatment agent. Surface treatment agents include oleic acid (melting point: 13.4°C), myristic acid (melting point: 54.4°C), palmitic acid (melting point: 62.9°C), stearic acid (melting point: 69.9°C), etc. Fatty acid compounds, fatty acid amide compounds such as oleic acid amide (melting point: 76°C), stearic acid amide (melting point: 100°C), pentanol (melting point: -78°C), hexanol (melting point: -51.6°C), oleyl Examples include aliphatic alcohol compounds such as alcohol (melting point: 16°C), stearyl alcohol (melting point: 59.4°C), and aliphatic nitrile compounds such as oleanitrile (melting point: -1°C). The surface treatment agent may have a low melting point (for example, a melting point of 100° C. or less) and high solubility in an organic solvent.

The shape of component (A) is not particularly limited, and may be, for example, flaky, resin-like, spherical, etc., or may be spherical. When the shape of component (A) is spherical, the surface roughness (Ra) of the die bonding film tends to be improved.

The average particle size of component (A) may be 0.01 to 10 μm. When the average particle size of the component (A) is 0.01 μm or more, the die bonding film can contain a desired amount of the component (A), which can prevent an increase in viscosity when producing an adhesive varnish. This tends to produce effects such as ensuring wettability of the die bonding film to the adherend and exhibiting better adhesion. When the average particle size of component (A) is 10 μm or less, film formability is excellent, and there is a tendency that the addition of component (A) can further improve heat dissipation. In addition, by setting the average particle size of component (A) to 10 μm or less, the thickness of the die bonding film can be made thinner, furthermore, semiconductor chips can be highly laminated, and the die bonding film ( A) It tends to be possible to prevent the occurrence of cracks in semiconductor chips due to protrusion of components. The average particle size of component (A) may be 0.1 μm or more, 0.3 μm or more, or 0.5 μm or more, and 8.0 μm or less, 7.0 μm or less, 6.0 μm or less, or 5.0 μm or less. , 4.0 μm or less, or 3.0 μm or less.

In addition, in this specification, the average particle diameter of component (A) is the particle diameter when the ratio (volume fraction) of the entire component (A) to the volume is 50% (laser 50% particle diameter (D ₅₀ )). means. The average particle diameter (D ₅₀ ) is determined by measuring a suspension of component (A) in water using a laser scattering method using a laser scattering particle size measuring device (e.g. Microtrac). be able to.

The content of component (A) may be 70.0% by mass or more, 71.0% by mass or more, 72.0% by mass or more, based on the total amount of component (A) and (B). It may be 73.0% by mass or more, 74.0% by mass or more, 74.5% by mass or more, 75.0% by mass or more, or 75.5% by mass or more. When the content of component (A) is 70.0% by mass or more based on the total amount of components (A) and (B), the thermal conductivity of the die bonding film is improved and the semiconductor device is improved. There is a tendency for heat dissipation to be further improved. The content of component (A) is, for example, 85.0% by mass or less, 82.0% by mass or less, 81.0% by mass or less, or 80% by mass or less, based on the total amount of component (A) and component (B). It may be .0% by mass or less. When the content of component (A) is 85.0% by mass or less based on the total amount of component (A) and component (B), it is possible to more fully contain other components in the die bonding film. can. This makes it easier to adjust the physical properties of the die bonding film, such as shear viscosity and storage modulus, within a predetermined range, and for example, it is possible to improve the step embedding properties of the die bonding film.

The content of component (A) may be 20.0 volume% or more, 21.0 volume% or more, 22.0 volume% or more, based on the total amount of component (A) and component (B). 22.5 volume% or more, 23.0 volume% or more, 23.5 volume% or more, 24.0 volume% or more, 24.5 volume% or more, 24.8 volume% or more, or 25.0 volume% or more There may be. When the content of component (A) is 20.0% by volume or more based on the total amount of components (A) and (B), the thermal conductivity of the die bonding film is improved and the semiconductor device is improved. There is a tendency for heat dissipation to be further improved. The content of component (A) is, for example, 33.0% by volume or less, 31.0% by volume or less, 30.0% by volume or less, or 29% by volume or less, based on the total amount of component (A) and component (B). It may be .0 volume % or less. When the content of component (A) is 33.0% by volume or less based on the total amount of component (A) and component (B), it is possible to more fully contain other components in the die bonding film. can. This makes it easier to adjust the physical properties of the die bonding film, such as shear viscosity and storage modulus, within a predetermined range, and for example, it is possible to improve the step embedding properties of the die bonding film.

The content (volume %) of component (A) is, for example, the density of the die bonding film x (g/cm ³ ), the density of component (A) y (g/cm ³ ), the density of the die bonding film ( When the mass proportion of component A) is z (mass %), it can be calculated from the following formula (I). The mass proportion of component (A) in the die bonding film can be determined by thermogravimetric analysis using, for example, a thermogravimetric differential thermal analyzer (TG-DTA). Moreover, the density of the die bonding film and the density of the component (A) can be determined by measuring the mass and specific gravity using a hydrometer.
(A) Component content (volume %) = (x/y) x z (I)
TG-DTA measurement conditions: Temperature range 30 to 600°C (heating rate 30°C/min), maintained at 600°C for 20 minutes Air flow rate: 300 mL/min Thermogravimetric differential thermal analyzer: Seiko Instruments Inc., TG /DTA220
Hydrometer: EW-300SG, manufactured by Alpha Mirage Co., Ltd.

Component (B): Thermosetting resin component Component (B) is not particularly limited, but may be a combination of component (B1), component (B2), and component (B3).

(B1) Component: Thermosetting resin The (B1) component is a component that has the property of forming three-dimensional bonds between molecules and curing by heating etc., and is a component that exhibits adhesive action after curing. Component (B1) may be an epoxy resin. The epoxy resin can be used without any particular restriction as long as it has an epoxy group in its molecule. The epoxy resin may have two or more epoxy groups in the molecule.

Examples of the epoxy resin include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, phenol novolac epoxy resin, cresol novolac epoxy resin, bisphenol A novolac epoxy resin, and bisphenol F novolac epoxy resin. , stilbene type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenolmethane type epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, biphenylaralkyl type epoxy resin, naphthalene type epoxy resin, dicyclopentadiene type Examples include epoxy resins, polyfunctional phenols, and diglycidyl ether compounds of polycyclic aromatics such as anthracene.

The epoxy resin may include an epoxy resin having a softening point of 50°C or higher. In this specification, the softening point refers to a value measured by the ring and ball method in accordance with JIS K7234.

The epoxy equivalent of the epoxy resin is not particularly limited, but may be 90 to 300 g/eq or 110 to 290 g/eq. When the epoxy equivalent of the epoxy resin is within this range, it tends to maintain the bulk strength of the die bonding film while ensuring fluidity of the adhesive varnish when forming the die bonding film.

The content of component (B1) is 1.0% by mass or more, 3.0% by mass or more, 5.0% by mass or more, or 7.0% by mass or more, based on the total amount of component (A) and (B). It may be at least 15.0 wt%, 14.0 wt% or less, 13.0 wt% or less, 12.0 wt% or less, or 11.0 wt% or less.

Component (B2): Curing agent Component (B2) is a component that acts as a curing agent for component (B1). When component (B1) is an epoxy resin, component (B2) may be an epoxy resin curing agent. Examples of epoxy resin curing agents include phenol resins (phenolic curing agents), acid anhydride curing agents, amine curing agents, imidazole curing agents, phosphine curing agents, azo compounds, and organic peroxides. It will be done. The epoxy resin curing agent may be a phenol resin from the viewpoints of handleability, storage stability, and curability.

The phenol resin can be used without particular limitation as long as it has a phenolic hydroxyl group in its molecule. Examples of phenolic resins include phenols such as phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol, and/or naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthalene, and formaldehyde. Novolak type phenol resin obtained by condensation or co-condensation with a compound having an aldehyde group under an acidic catalyst, allylated bisphenol A, allylated bisphenol F, allylated naphthalene diol, phenol novolac, phenols such as phenol and/or Alternatively, phenol aralkyl resins synthesized from naphthols and dimethoxyparaxylene or bis(methoxymethyl)biphenyl, naphthol aralkyl resins, biphenylaralkyl type phenol resins, phenylaralkyl type phenol resins, etc. can be mentioned.

The phenol resin may include a phenol resin having a softening point of 90°C or lower. By including a phenolic resin with a softening point of 90°C or lower, the phenolic resin is sufficiently liquefied at 110°C, making it easy to adjust the physical properties of the die bonding film, such as shear viscosity and storage modulus, within a predetermined range. There is a tendency to

The hydroxyl equivalent weight of the phenolic resin may be 40 to 300 g/eq, 70 to 290 g/eq, or 100 to 280 g/eq. When the hydroxyl equivalent of the phenol resin is 40 g/eq or more, the storage modulus of the die bonding film tends to be further improved, and when it is 300 g/eq or less, it is possible to prevent problems due to foaming, outgassing, etc. becomes.

Ratio of the epoxy equivalent of the epoxy resin as the component (B1) to the hydroxyl equivalent of the phenol resin as the component (B2) (Epoxy equivalent of the epoxy resin as the component (B1)/hydroxyl equivalent of the phenol resin as the component (B2) ) are 0.30/0.70 to 0.70/0.30, 0.35/0.65 to 0.65/0.35, and 0.40/0.60 to 0 from the viewpoint of curability. .60/0.40, or 0.45/0.55 to 0.55/0.45. When the ratio is 0.30/0.70 or more, more sufficient curability tends to be obtained. When the ratio is 0.70/0.30 or less, the viscosity can be prevented from becoming too high, and more sufficient fluidity can be obtained.

The content of component (B2) is 1.0% by mass or more, 3.0% by mass or more, 4.0% by mass or more, or 5.0% by mass or more, based on the total amount of component (A) and (B). It may be at least 15.0 mass%, 12.0 mass% or less, 10.0 mass% or less, or 9.0 mass% or less.

The total content of component (B1) and component (B2) may be 13.0% by mass or more based on the total amount of component (A) and component (B). When the total content of component (B1) and component (B2) is 13.0% by mass or more based on the total amount of component (A) and (B), the shear viscosity of the die bonding film decreases during storage. It becomes easier to adjust physical properties such as elastic modulus to a predetermined range, and for example, it is possible to improve the level difference embedding property of the die bonding film. The total content of component (B1) and component (B2) is 13.2% by mass or more, 13.5% by mass or more, 14.0% by mass based on the total amount of component (A) and (B). % or more, 14.5% by mass or more, 15.0% by mass or more, or 15.5% by mass or more. The total content of component (B1) and component (B2) is 30.0% by mass or less, 25.0% by mass or less, 23.0% by mass based on the total amount of component (A) and (B). % or less, 22.0 mass % or less, 21.0 mass % or less, 20.0 mass % or less, or 18.0 mass % or less.

(B3) Component: Elastomer Examples of the (B3) component include polyimide resins, acrylic resins, urethane resins, polyphenylene ether resins, polyetherimide resins, phenoxy resins, modified polyphenylene ether resins, and the like. Component (B3) may be one of these resins, and may be a resin having a crosslinkable functional group, or may be an acrylic resin having a crosslinkable functional group. Here, the acrylic resin means a (meth)acrylic (co)polymer containing a structural unit derived from (meth)acrylate ((meth)acrylic acid ester). The acrylic resin may be a (meth)acrylic (co)polymer containing a structural unit derived from a (meth)acrylate having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxy group. Further, the acrylic resin may be an acrylic rubber such as a copolymer of (meth)acrylate and acrylonitrile.

Commercially available acrylic resins include, for example, SG-P3, SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, HTR-860P-3, HTR-860P-3CSP, HTR-860P- Examples include 3CSP-3DB (all manufactured by Nagase ChemteX Corporation).

The glass transition temperature (Tg) of the elastomer as component (B3) may be -50 to 50°C or -30 to 20°C. When the Tg is -50°C or higher, the tackiness of the die bonding film becomes low, so that the handleability tends to be further improved. When the Tg is 50° C. or less, the fluidity of the adhesive varnish when forming a die bonding film tends to be more sufficiently ensured. Here, the Tg of the elastomer as component (B3) means a value measured using a DSC (thermal differential scanning calorimeter) (for example, manufactured by Rigaku Co., Ltd., trade name: Thermo Plus 2).

The weight average molecular weight (Mw) of the elastomer as component (B3) may be 50,000 to 1.6 million, 100,000 to 1.4 million, or 300,000 to 1.2 million. When the glass transition temperature of the elastomer as component (B3) is 50,000 or higher, film forming properties tend to be better. When the weight average molecular weight of the component (B3) is 1.6 million or less, the adhesive varnish tends to have better fluidity when forming a die bonding film. Here, the Mw of the elastomer as component (B3) means a value measured by gel permeation chromatography (GPC) and converted using a standard polystyrene calibration curve.

The measuring device, measuring conditions, etc. for the Mw of the elastomer as the component (B3) are, for example, as follows.
Pump: L-6000 (manufactured by Hitachi, Ltd.)
Column: Gelpack GL-R440 (manufactured by Showa Denko Materials Co., Ltd.), Gelpack GL-R450 (manufactured by Showa Denko Materials Co., Ltd.), and Gelpack GL-R400M (manufactured by Showa Denko Materials Co., Ltd.) Columns (each 10.7 mm (diameter) x 300 mm) connected in this order Eluent: Tetrahydrofuran (hereinafter referred to as "THF")
Sample: A solution of 120 mg of sample dissolved in 5 mL of THF Flow rate: 1.75 mL/min

The content of component (B3) is 15.0% by mass or less, 12.0% by mass or less, 10.0% by mass or less, or 9.0% by mass or less, based on the total amount of component (A) and (B). It may be less than % by mass. If the content of component (B3) is 15.0% by mass or less based on the total amount of components (A) and (B), the viscosity will become too high and, for example, the step embeddability will decrease. can be prevented from happening. From the viewpoint of film processability, the lower limit of the content of component (B3) is 1.0% by mass or more, 1.5% by mass or more, 2. It may be 0% by mass or more, 2.5% by mass or more, or 2.8% by mass or more.

Component (A) and component (B) may be the main components of the die bonding film D (adhesive layer). The total content of component (A) and component (B) is 80% by mass or more, 85% by mass or more, 90% by mass or more, 95% by mass or more, based on the total amount of die bonding film D (adhesive layer). , or 98% by mass or more.

Component (C): Coupling agent Component (C) may be a silane coupling agent. Examples of the silane coupling agent include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3-(2-aminoethyl)aminopropyltrimethoxysilane. It will be done.

Component (D): Curing accelerator Examples of the component (D) include imidazoles and their derivatives, organic phosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. Among these, from the viewpoint of reactivity, the component (D) may be imidazoles and derivatives thereof.

Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole. These may be used alone or in combination of two or more.

The die bonding film may further contain other components. Examples of other components include pigments, ion scavengers, antioxidants, and the like.

The total content of component (C), component (D), and other components may be 0.005 to 10% by mass based on the total amount of the die bonding film.

Die bonding film D is formed by forming an adhesive composition containing component (A), component (B), and, if necessary, component (C), component (D), and other components into a film. It can be made by Such a die bonding film D can be formed by applying an adhesive composition to a support film. The adhesive composition can be used as an adhesive varnish diluted with an organic solvent. Adhesive varnishes can be obtained by mixing adhesive compositions and organic solvents. When using an adhesive varnish, the die bonding film D can be formed by applying the adhesive varnish to the support film and removing the solvent by heating and drying.

The organic solvent is not particularly limited as long as it can dissolve components other than component (A). Examples of organic solvents include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; tetrahydrofuran, 1,4-dioxane, etc. Cyclic ethers; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone; methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, γ-butyrolactone, butylcarbyl Esters such as toll acetate and ethyl carbitol acetate; carbonic acid esters such as ethylene carbonate and propylene carbonate; amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone; butyl carbitol; Examples include alcohols such as ethyl carbitol. These may be used alone or in combination of two or more. Among these, organic solvents include N,N-dimethylformamide, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, butyl carbitol, ethyl carbitol, It may be butyl carbitol acetate, ethyl carbitol acetate, or cyclohexanone. The concentration of solid components (components other than organic solvents) in the adhesive varnish may be 10 to 80% by mass, based on the total amount of the adhesive varnish.

Mixing can be carried out using an appropriate combination of ordinary stirrers such as a homodisper, a three-one motor, a mixing rotor, a planetary, and a stirrer. The stirrer may be equipped with heating equipment such as a heater unit that can control the temperature conditions of the raw material varnish or adhesive varnish. When using a homodisper for mixing, the rotation speed of the homodisper may be 4000 revolutions/minute or more.

The conditions for mixing are not particularly limited, but the mixture may be mixed while being heated, and if necessary, may be heated using heating equipment or the like. The mixing temperature in the mixing step may be 50°C or higher or 60°C or higher. The upper limit of the mixing temperature in the mixing step may be, for example, 100°C or less or 80°C or less. The mixing time of the mixing step may be, for example, 1 minute or more or 5 minutes or more, and 60 minutes or less or 40 minutes or less.

As a method for applying the adhesive varnish to the support film, a known method can be used, such as a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, a curtain coating method, etc. It will be done.

After applying the adhesive varnish to the support film, the organic solvent may be dried by heating, if necessary. Heat drying is not particularly limited as long as the organic solvent used is sufficiently volatilized, but for example, the heat drying temperature may be 50 to 200°C, and the heat drying time may be 0.1 to 30 minutes. It's fine. Heat drying may be performed in stages at different heat drying temperatures or heat drying times.

In this way, die bonding film D can be obtained. The thickness of the die bonding film D can be adjusted as appropriate depending on the application, and may be, for example, 3 μm or more, 5 μm or more, or 10 μm or more, and 200 μm or less, 100 μm or less, 50 μm or less, or 30 μm or less. It's good.

Examples of the base layer 2a in the dicing film 2 include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. Moreover, the base material layer 2a may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, etching treatment, etc., as necessary.

The adhesive layer 2b in the dicing film 2 has sufficient adhesive strength to prevent the semiconductor chips from scattering during dicing, and has low adhesive strength to the extent that the semiconductor chips are not damaged in the subsequent semiconductor chip pickup process. There are no particular limitations, and those conventionally known in the field of dicing films can be used. The adhesive layer 2b may be an adhesive layer made of a UV-curable adhesive (UV-curable adhesive layer) or an adhesive layer made of an UV-curable adhesive (UV-curable adhesive layer). It may be. When the adhesive layer 2b is an ultraviolet curable adhesive layer, the adhesiveness of the adhesive layer 2b can be reduced by irradiating the adhesive layer 2b with ultraviolet rays.

The thickness of the dicing film 2 (base material layer 2a and adhesive layer 2b) may be 60 to 150 μm or 70 to 130 μm from the viewpoint of economic efficiency and ease of handling the film.

The dicing/die bonding integrated film 10 includes a step of preparing a dicing film 2 including a die bonding film D, a base material layer 2a, and an adhesive layer 2b provided on the base material layer 2a, and a step of preparing the die bonding film D. and the adhesive layer 2b of the dicing film 2. A known method can be used to bond the die bonding film D and the adhesive layer 2b of the dicing film 2 together.

-Walaminate process In this process, first, the dicing/die bonding integrated film 10 is placed in a predetermined device. Subsequently, the semiconductor wafer W is attached to the die bonding film D of the dicing/die bonding integrated film 10 to produce the singulation laminate 20 (see FIG. 2(a)).

Examples of the semiconductor wafer W include single crystal silicon, polycrystalline silicon, various ceramics, and compound semiconductors such as gallium arsenide. The circuit surface of the semiconductor wafer W may be provided on the surface opposite to the surface on the die bonding film D side.

The thickness of the semiconductor wafer W (semiconductor chip Wa) is, for example, 10 to 200 μm, and may be 20 to 100 μm.

In this way, it is possible to obtain a singulation laminate 20 comprising the dicing film 2 (base material layer 2a and adhesive layer 2b), die bonding film D, and semiconductor wafer W in this order (FIG. 2 (see (a)).

- Dicing process In this process, the semiconductor wafer W and the die bonding film D are diced to produce a plurality of individualized semiconductor chips 60 with adhesive layers (semiconductor chips with die bonding film pieces) (FIG. 2(b) )reference). At this time, a part of the adhesive layer 2b, or all of the adhesive layer 2b and a part of the base material layer 2a may be diced and separated into pieces. A known dicing method can be used as the dicing method in the dicing step. In this way, the dicing/die bonding integrated film 10 also functions as a dicing film.

- Ultraviolet irradiation step When the adhesive layer 2b is an ultraviolet curable adhesive layer, the method for manufacturing the laminate may include an ultraviolet irradiation step. In this step, the adhesive layer 2b is irradiated with ultraviolet light (via the base layer 2a) (see FIG. 3(a)). In ultraviolet irradiation, the wavelength of ultraviolet light may be 200 to 400 nm. The ultraviolet irradiation conditions may be such that the illumination intensity and irradiation amount are in the range of 30 to 240 mW/cm ² and 50 to 500 mJ/cm ² , respectively.

- Pick-up process In this process, the adhesive layer is pushed up from the base material layer 2a side with the needle 72 while separating the diced semiconductor chips 60 with the adhesive layer from each other by expanding the base material layer 2a. The attached semiconductor chip 60 is suctioned by a suction collet 74 and picked up from the adhesive layer 2ba (see FIG. 3(b)). Note that the adhesive layer-attached semiconductor chip 60 includes a semiconductor chip Wa and an adhesive layer Da. The semiconductor chip Wa is a semiconductor wafer W cut into pieces, and the adhesive layer Da is a die bonding film D cut into pieces. Moreover, the adhesive layer 2ba is obtained by dividing the adhesive layer 2b into pieces. The adhesive layer 2ba may remain on the base material layer 2a after the adhesive layer-attached semiconductor chip 60 is picked up. In this step, it is not necessarily necessary to expand the base material layer 2a, but by expanding the base material layer 2a, the pick-up properties can be further improved.

The amount of thrust by the needle 72 can be set as appropriate. Furthermore, from the viewpoint of ensuring sufficient pick-up performance even for extremely thin wafers, pushing up may be performed in two or three stages, for example. Further, the adhesive layer-coated semiconductor chip 60 may be picked up by a method other than the method using the suction collet 74.

- Die bonding process In this process, the picked up semiconductor chip 60 with an adhesive layer is bonded onto the surface 80A of the support member 80 via the adhesive layer Da by thermocompression bonding (see FIG. 3(c)). In this way, the laminate 100 can be obtained. A plurality of semiconductor chips 60 with adhesive layers may be bonded to the support member 80 .

The supporting member 80 may be, for example, a lead frame such as a 42 alloy lead frame or a copper lead frame; a plastic film containing polyimide resin, epoxy resin, etc.; a base material such as glass nonwoven fabric impregnated with plastic such as polyimide resin or epoxy resin; Examples include a cured modified plastic film; a ceramic film containing alumina, etc.; a film containing a sealing material (insulating material); a film containing a thermally conductive material (TIM material). The support member 80 may be a semiconductor member such as a semiconductor chip, a semiconductor wafer, or a semiconductor package.

The heating temperature in thermocompression bonding may be, for example, 80 to 160°C. The load in thermocompression bonding may be, for example, 5 to 15N. The heating time in thermocompression bonding may be, for example, 0.5 to 10 seconds.

Subsequently, the obtained laminate 100 is heated in two or more stages to obtain a first cured body 110 (see FIG. 1(b)) in which the reaction rate of the adhesive layer Dc is 70 to 80%. . The adhesive layer Dc in the first cured product 110 includes a cured product of the die bonding film D. By heating the laminate 100 in multiple stages of two or more stages, it is possible to suppress defects that occur when curing the adhesive layer. The first curing step may be a step of heating the laminate in a range of 100 to 160° C. in two or more stages. More specifically, the first curing step includes a step (step (A)) of heating the laminate in a range of 100°C or more and less than 140°C, and a step (step (A)) of heating the laminate in a range of 140°C or more and less than 160°C. It may be a step of heating in multiple stages including step (B)). The first curing step includes step (C), step (A), and step (B), with the addition of a step (step (C)) of heating the laminate in a range of 60°C or higher and lower than 100°C. It may be a step of heating in multiple stages. The first curing step is preferably a step in which the temperature is increased in stages, such as in the order of step (C), step (A), and step (B).

The heating temperature in step (A) is 100°C or higher and lower than 140°C, and may be 110°C or higher, 115°C or higher, or 120°C, and 135°C or lower, 132°C or lower, or 130°C or lower. Good too. The heating time in step (A) is 10 to 180 minutes, and may be 20 minutes or more, 30 minutes or more, or 40 minutes or more, and may be 150 minutes or less, 120 minutes or less, or 90 minutes or less. good.

The heating temperature in step (B) is 140°C or higher and lower than 160°C, and may be 142°C or higher or 145°C or higher, or 158°C or lower or 155°C or lower. The heating time in step (B) is 10 to 180 minutes, and may be 20 minutes or more, 30 minutes or more, or 40 minutes or more, and may be 150 minutes or less, 120 minutes or less, or 90 minutes or less. good.

The heating temperature in step (C) is 60°C or higher and lower than 100°C, and may be 62°C or higher or 65°C, 90°C or lower, 80°C or lower, or 75°C or lower. The heating time in step (C) is 10 to 180 minutes, and may be 20 minutes or more, 30 minutes or more, or 40 minutes or more, and may be 150 minutes or less, 120 minutes or less, or 90 minutes or less. good.

In the first curing step, the semiconductor chip Wa of the stacked body 100 may be heated while being pressurized. The pressurizing conditions may be, for example, 0.1 to 1.0 MPa.

Heating of the laminate 100 is not particularly limited, but it is preferably carried out in a heating device (for example, a pressure oven) equipped with pressure equipment because temperature control, pressure control, etc. are easy.

The reaction rate of the adhesive layer Dc in the first cured body 110 is 70 to 80%. When the reaction rate of the adhesive layer Dc is 80% or less, the occurrence of defects tends to be suppressed in curing the adhesive layer in the first curing step, and when the reaction rate of the adhesive layer Dc is 70% or more, If so, it tends to be possible to suppress the occurrence of defects in curing the adhesive layer in the second curing step. The reaction rate of the adhesive layer Dc may be 72% or more or 73% or more, or 78% or less or 75% or less. The reaction rate of the adhesive layer Dc can be adjusted by adjusting the heating temperature and heating time.

The reaction rate of the adhesive layer Dc means a value determined by the following measuring method. Two 10 mg samples before heat treatment are prepared from the die bonding film used for the adhesive layer. Next, one of the samples before the heat treatment is subjected to a predetermined heat treatment to obtain a sample after the heat treatment in the first curing step. Next, the sample before heat treatment and the sample after heat treatment were measured using a differential scanning calorimeter (Thermo plus EVO2 DSC8231, manufactured by Rigaku Co., Ltd.) at a heating rate of 10°C/min in a nitrogen atmosphere. DSC calorific value is measured in a temperature range of 30 to 300°C. The DSC calorific value can be determined by analyzing the DSC curve in the temperature range of 170 to 270°C using the partial area analysis method, specifying the baseline of the analysis temperature range, and integrating the peak area. . Based on the determined DSC calorific value, the reaction rate of the adhesive layer is determined from the following formula (1).
Reaction rate of adhesive layer Dc = (C0-C1)/C0×100 (1)
[In the formula, C0 represents the DSC calorific value (J/g) of the sample before heat treatment, and C1 represents the DSC calorific value (J/g) of the sample after heat treatment. ]

<Second curing step>
This step is a step in which the first cured body 110 is further heated to obtain a second cured body 120 (see FIG. 1(c)) in which the reaction rate of the adhesive layer Dcc exceeds 80%. This step may be a step of heating the adhesive layer together with the sealing resin used in the sealing step to further harden the adhesive layer. By further heating the first cured body 110, it is possible to further suppress defects that occur when curing the adhesive layer. The second curing step may be a step of heating the first cured body 110 in a range of 160° C. or higher.

The heating temperature in the second curing step is 160°C or higher, and may be 170°C or higher, 180°C or higher, or 190°C. The upper limit of the heating temperature in the second curing step may be, for example, 240°C or lower, 230°C or lower, 220°C or lower, or 210°C or lower. The heating time of the second curing step is 1 to 40 minutes, and may be 3 minutes or more, 5 minutes or more, or 10 minutes or more, and 30 minutes or less, 25 minutes or less, or 20 minutes or less. Good too.

In the second curing step, it is not necessary to heat the semiconductor chip Wa of the first cured body 110 while applying pressure, and it is preferable to heat it under atmospheric pressure. Heating of the first cured body 110 is not particularly limited, but it is preferably carried out using a heating oven, a hot plate, etc. because temperature control etc. are easy.

The reaction rate of the adhesive layer Dcc in the second cured body 120 exceeds 80%. The adhesive layer Dcc in the second cured body 120 includes a cured die bonding film D. When the reaction rate of the adhesive layer Dc exceeds 80%, it tends to further suppress the occurrence of defects in curing the adhesive layer in the second curing step. The upper limit of the reaction rate of the adhesive layer Dc may be, for example, 100% or less, 98% or less, 95% or less, 92% or less, 90% or less, or 85% or less. The reaction rate of the adhesive layer Dcc can be adjusted by adjusting the heating temperature and heating time.

The reaction rate of the adhesive layer Dcc means a value determined by the following measuring method. Two 10 mg samples before heat treatment are prepared from the die bonding film used for the adhesive layer. Next, one of the samples before the heat treatment is subjected to a predetermined heat treatment to obtain a sample after the heat treatment in the first curing step and the second curing step. Next, the sample before heat treatment and the sample after heat treatment were measured using a differential scanning calorimeter (Thermo plus EVO2 DSC8231, manufactured by Rigaku Co., Ltd.) at a heating rate of 10°C/min in a nitrogen atmosphere. DSC calorific value is measured in a temperature range of 30 to 300°C. The DSC calorific value can be determined by analyzing the DSC curve in the temperature range of 170 to 270°C using the partial area analysis method, specifying the baseline of the analysis temperature range, and integrating the peak area. . Based on the determined DSC calorific value, the reaction rate of the adhesive layer is determined from the following formula (2).
Reaction rate of adhesive layer Dcc=(C0-C2)/C0×100 (2)
[In the formula, C0 represents the DSC calorific value (J/g) of the sample before heat treatment, and C2 represents the DSC calorific value (J/g) of the sample after heat treatment. ]

<Wire bonding process>
In the method for manufacturing a semiconductor device according to the present embodiment, between the first curing step and the second curing step, the tips of the terminal portions (inner leads) of the support member 80 and It may include a step of electrically connecting the electrode pad with a bonding wire (wire bonding step). As the bonding wire, for example, gold wire, aluminum wire, copper wire, silver wire, etc. can be used. The temperature during wire bonding may be in the range of 80 to 250°C or 80 to 220°C. Heating time may be from a few seconds to a few minutes. Wire bonding may be performed in a heated state within the above temperature range by using a combination of vibration energy by ultrasonic waves and compression energy by applied pressure.

<Sealing process>
The method for manufacturing a semiconductor device of the present embodiment includes a step of sealing the semiconductor chip Wa with a sealing resin (sealing step) between the first curing step and the second curing step, if necessary. You may be prepared. This step is performed to protect the semiconductor chip Wa or the bonding wires mounted on the support member 80. This step can be performed by molding the sealing resin with a mold. The sealing resin may be, for example, an epoxy resin. The support member 80 and the residue are embedded by heat and pressure during sealing, and peeling due to air bubbles at the adhesive interface can be prevented.

Through these steps, a semiconductor device (second cured body 120, etc.) can be obtained.

[Semiconductor device]
FIG. 4 is a schematic cross-sectional view showing one embodiment of a semiconductor device. The semiconductor device 200 shown in FIG. 4 includes a semiconductor chip Wa, a support member 80 on which the semiconductor chip Wa is mounted, and an adhesive member 90 (an adhesive layer Dcc, a cured product of the die bonding film described above). The adhesive member 90 (adhesive layer Dcc) is provided between the semiconductor chip Wa and the support member 80, and adheres the semiconductor chip Wa and the support member 80. Connection terminals (not shown) of the semiconductor chip Wa may be electrically connected to external connection terminals (not shown) via wires 70. The semiconductor chip Wa may be sealed with a sealing material layer 92 formed from a sealing material. Solder balls 94 may be formed on the surface of the support member 80 opposite to the surface 80A for electrical connection with an external board (motherboard) (not shown).

Since the semiconductor device 200 includes the above-mentioned cured die bonding film as the adhesive member 90, it has excellent heat dissipation properties.

The present disclosure will be specifically described below based on Examples, but the present disclosure is not limited thereto.

(Manufacturing example 1)
[Production of dicing/die bonding integrated film and production of laminate]
<Preparation of adhesive varnish>
A mixed solution was prepared by adding cyclohexanone as an organic solvent to component (B) and stirring the mixture using the symbols and composition ratios (unit: parts by mass) shown in Table 1. After each component was dissolved, component (A) was added to the mixed solution, and the mixture was stirred for 20 minutes at 4000 rpm using a homodisper (T.K. HOMO MIXER MARK II, manufactured by Primix Co., Ltd.). Next, component (C) and component (D) were further added to the mixed solution, and the mixture was stirred overnight at 250 rpm using a three-one motor. In this way, an adhesive varnish of Production Example 1 was prepared in which the total content of component (A) and component (B) was 61% by mass.

In addition, the symbol of each component in Table 1 means the following.

(A) Component: Conductive particles (A-1) Silver particles AG-3-1F (trade name, manufactured by DOWA Electronics Co., Ltd., shape: spherical, average particle size (laser 50% particle size (D ₅₀ )): 1 .5μm)

(B) Component: Thermosetting resin component (B1) Component: Thermosetting resin (B1-1) N-500P-10 (trade name, manufactured by DIC Corporation, cresol novolak type epoxy resin, epoxy equivalent: 204 g/eq , Softening point: 84℃, solid at 25℃)
(B1-2) EXA-830CRP (trade name, manufactured by DIC Corporation, bisphenol F type epoxy resin, epoxy equivalent: 159 g/eq, liquid at 25°C)

(B2) Component: Curing agent (B2-1) MEH-7800M (trade name, manufactured by Meiwa Chemical Co., Ltd., phenylaralkyl type phenol resin, hydroxyl equivalent: 174 g/eq, softening point: 80°C)

(B3) Component: Elastomer (B3-1) HTR-860P-3CSP (product name, Nagase ChemteX Co., Ltd., acrylic rubber, weight average molecular weight: 1 million, softening point: -7°C)

(C) Component: Coupling agent (C-1) Z-6119 (trade name, manufactured by Dow Toray Industries, Inc., γ-ureidopropyltriethoxysilane)

(D) Component: Curing accelerator (D-1) 2PZ-CN (trade name, manufactured by Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole)

<Production of die bonding film>
The adhesive varnish of Production Example 1 was used to produce a die bonding film. The vacuum-defoamed adhesive varnish of Production Example 1 was applied onto a release-treated polyethylene terephthalate (PET) film (thickness: 38 μm) serving as a support film. The applied varnish was heated and dried in two steps: at 90° C. for 3 minutes and then at 130° C. for 3 minutes, to produce the die bonding film of Production Example 1 with a thickness of 25 μm in a B-stage state on the support film. .

<Production of integrated dicing and die bonding film>
A dicing tape (manufactured by Showa Denko Materials Co., Ltd., thickness 110 μm) comprising a base material layer and an adhesive layer was prepared, and the adhesive layer of the dicing tape was pasted onto the die bonding film of Production Example 1 using a rubber roll. A dicing/die bonding integrated film of Production Example 1 was produced, which included a base material layer, an adhesive layer, and an adhesive layer (die bonding film) in this order.

<Preparation of laminate>
The adhesive layer (die bonding film) of the dicing/die bonding integrated film of Production Example 1 was applied to a 12-inch semiconductor wafer (thickness 150 μm) using a fully automatic multi-film mounter (DFM-2800, manufactured by DISCO Co., Ltd.). , 70° C., tension level 5, and sticking speed 10 mm/sec. Thereafter, it was diced into pieces with a chip size of 6.45 x 6.58 mm using a fully automatic dicer (DFD-6362, manufactured by DISCO Co., Ltd.) to obtain diced semiconductor chips with an adhesive layer. The obtained semiconductor chip with the adhesive layer was bonded to a lead frame as a supporting member using a die bonder (DB-830Plus+, manufactured by Fasford Technology Co., Ltd.) at a temperature of 120°C, a time of 1.0 seconds, and a load of 10N. By press-bonding, a laminate of Production Example 1 including a support member, an adhesive layer, and a semiconductor chip in this order was obtained. Before crimping the semiconductor chip with the adhesive layer, apply bulk sealing tape (RT series, manufactured by Showa Denko Materials Co., Ltd.) to the back side of the lead frame to ensure sufficient stage adsorption with the die bonder. Pasted.

(Example 1)
[Preparation of second cured body]
<Preparation of first cured body>
The laminate of Production Example 1 was heated in a fully automatic pressure oven (PCOA-01T, manufactured by NTT Advanced Technology Corporation) at the first stage (70°C/1 hour), at the second stage (120°C/1 hour), The first cured product of Example 1 was obtained by heating under the third heating condition (150° C./1 hour). Note that (temperature/time) here means heating at the temperature and for the time, and the same applies hereinafter. Heating was performed while applying pressure, and the pressure was kept constant at 0.7 MPa. Further, the time required to reach each set temperature was 30 minutes. A plurality of first cured bodies were prepared for use in producing a second cured body, which will be described later, and for use in various evaluations.

<Preparation of second cured body>
Subsequently, the obtained first cured product of Example 1 was heated at (200°C/15 minutes) using a hot plate (TH-900, manufactured by As One Corporation) to obtain the first cured product of Example 1. A second cured body was obtained.

(Example 2)
In the production of the first cured product, Example 2 A first cured body and a second cured body were obtained.

(Comparative example 1)
In producing the first cured body, the first cured body and the second cured body of Comparative Example 1 were obtained in the same manner as in Example 1, except that the heating conditions were (175°C/1 hour). Ta.

(Comparative example 2)
In preparing the first cured product, Comparative Example 2 A first cured body and a second cured body were obtained.

(Comparative example 3)
In producing the first cured body, the first cured body and the second cured body of Comparative Example 3 were obtained in the same manner as in Example 1, except that the heating conditions were (120°C/2 hours). Ta.

(Comparative example 4)
Comparative Example 4 A first cured body and a second cured body were obtained.

[Various evaluations]
<Reaction rate of adhesive layer of first cured body>
The reaction rate of the adhesive layer of the first cured product was measured by the following measurement method. First, two 10 mg samples before heat treatment were prepared from the die bonding film used for the adhesive layer. Next, one of the samples before the heat treatment was subjected to a predetermined heat treatment to obtain a sample after the heat treatment in the first curing step. Next, the sample before heat treatment and the sample after heat treatment were measured using a differential scanning calorimeter (Thermo plus EVO2 DSC8231, manufactured by Rigaku Co., Ltd.) at a heating rate of 10°C/min in a nitrogen atmosphere. The DSC calorific value was measured in a temperature range of 30 to 300°C. The DSC calorific value was determined by analyzing the DSC curve in the temperature range of 170 to 270° C. using the partial area analysis method, specifying the baseline of the analysis temperature range, and integrating the peak area. Based on the determined DSC calorific value, the reaction rate of the adhesive layer was determined from the following formula (1). The results are shown in Table 2.
Reaction rate of adhesive layer of first cured product = (C0-C1)/C0×100 (1)
[In the formula, C0 represents the DSC calorific value (J/g) of the sample before heat treatment, and C1 represents the DSC calorific value (J/g) of the sample after heat treatment. ]

<Reaction rate of adhesive layer of second cured product>
The reaction rate of the adhesive layer of the second cured product was measured by the following measurement method. First, two 10 mg samples before heat treatment were prepared from the die bonding film used for the adhesive layer. Next, one of the samples before the heat treatment was subjected to a predetermined heat treatment to obtain a sample after the heat treatment in the first curing step and the second curing step. Next, the sample before heat treatment and the sample after heat treatment were measured using a differential scanning calorimeter (Thermo plus EVO2 DSC8231, manufactured by Rigaku Co., Ltd.) at a heating rate of 10°C/min in a nitrogen atmosphere. The DSC calorific value was measured in a temperature range of 30 to 300°C. The DSC calorific value was determined by analyzing the DSC curve in the temperature range of 170 to 270° C. using the partial area analysis method, specifying the baseline of the analysis temperature range, and integrating the peak area. Based on the determined DSC calorific value, the reaction rate of the adhesive layer was determined from the following formula (2). The results are shown in Table 2.
Reaction rate of adhesive layer of second cured product = (C0-C2)/C0×100 (2)
[In the formula, C0 represents the DSC calorific value (J/g) of the sample before heat treatment, and C2 represents the DSC calorific value (J/g) of the sample after heat treatment. ]

<Observation of adhesive layer>
The adhesive layer of the first cured product and the adhesive layer of the second cured product of Examples 1 and 2 and Comparative Examples 1 to 4 were used as evaluation samples using an ultrasonic digital image diagnostic apparatus (IS-350, Incyte Co., Ltd.). The adhesive layer was observed using the following method (manufactured by the same company). The flaw detection method in the flaw detection mode was a transmission method, and the frequency of the transmitting side probe was 35 MHz, and the frequency of the receiving side probe was 25 MHz. In observation using the transmission method, abnormalities such as voids and peeling are usually observed in the darkest color (black in the case of black and white images), but in this observation, the surface of the semiconductor chip was not observed in the darkest color. It was observed as a circular shadow with a slightly lighter color (gray in the case of black and white images). This is considered to be because the warping of the support member and semiconductor chip of the evaluation sample caused a shift in signal reception timing, a shift in the incident angle of the ultrasonic waves, and the like. Therefore, when observing this adhesive layer, if no shadow is observed, the defect is suppressed and the problem is rated "A", if the shadow is faintly observed, it is "B", and if the shadow is clearly observed was rated "C". The results are shown in Table 2.

<Evaluation of resin separation and cracks>
The first and second cured bodies of Examples 1 and 2 and Comparative Examples 1 to 4 were used to evaluate the occurrence of resin separation and the occurrence of cracks. Here, resin separation means that there are locations in the adhesive layer where the conductive particles and the resin component are separated and the dispersibility of the conductive particles is significantly reduced. An evaluation sample was obtained by cutting out one package from the lead frame with nippers and polishing it in the thickness direction of the adhesive layer up to the center using a polisher (RPO-128K, manufactured by Refinetech Co., Ltd.). Polishing was performed using abrasive paper in the order of #600, #1200, #2000, and #4000, and finally buffing was performed using alumina liquid (0.3 μm, manufactured by Refinetech Co., Ltd.). Next, the polished evaluation sample was observed using a scanning electron microscope (SU1510, manufactured by Hitachi High-Tech Corporation) in secondary electron image mode at a magnification of 3000 times. Evaluation of resin separation and cracks was carried out by dividing the polished cross section into five equal parts and checking the range visible under 3000x magnification. At this time, regarding resin separation, if resin separation is not confirmed in all the cross sections of the 5 divisions, resin separation is considered to be suppressed and "A" is given, and in the cross sections of 2 and 3 of the 5 divisions. , the case where resin separation was confirmed was evaluated as "B", and the case where resin separation was confirmed in all 5-divided cross sections was evaluated as "C". Regarding cracks, similarly, if no cracks are observed in any of the 5-divided cross-sections, cracks are considered suppressed and "A" is given. The case where cracks were observed was evaluated as "B", and the case where cracks were observed in all five sections was evaluated as "C". The results are shown in Table 2.

<Evaluation of warpage>
Using the first and second cured bodies of Examples 1 and 2 and Comparative Examples 1 to 4 as evaluation samples, the surface of the semiconductor chip was observed using a 3D measurement laser microscope (OLS4100, manufactured by Olympus Corporation). did. A cured body (evaluation sample) comprising a support member, an adhesive layer, and a semiconductor chip in this order was placed with the semiconductor chip facing upward, and a mapping function was applied from directly above the semiconductor chip at 20x magnification. The image was taken using From the obtained image, the difference in height (unit: μm) between the center and edge of the semiconductor chip was calculated, and this was taken as the warp of the semiconductor chip. When the warpage was 30 μm or less, it was evaluated as "A" as the warpage was suppressed, "B" when the warp was more than 30 μm and less than 50 μm, and "C" when the warp was more than 50 μm. . The results are shown in Table 2.

As shown in Table 2, in the first curing step after the die bonding step, the adhesive layer is heated in multiple stages of two or more, and the reaction rate of the adhesive layer of the first cured product is within a predetermined range. In Examples 1 and 2, the adhesive layer Problems that occur during curing were sufficiently suppressed. On the other hand, in Comparative Examples 1 and 3 in which the adhesive layer was not heated in multiple stages, and in Comparative Examples 2 and 4 in which the reaction rate of the adhesive layer was not within the predetermined range, the adhesive layer was cured. Failures that occur during this time were not suppressed. These results confirm that the method for manufacturing a semiconductor device of the present disclosure is capable of suppressing defects that occur when curing an adhesive layer containing conductive particles and a thermosetting resin component. Ta.

2... Dicing film, 2a... Base material layer, 2b, 2ba... Adhesive layer, 10... Dicing/die bonding integrated film, 20... Laminate for singulation, 60... Semiconductor chip with adhesive layer, 70... Wire , 72... needle, 74... suction collet, 80... support member, 92... sealing material layer, 94... solder ball, 100... laminate, 110... first cured body, 120... second cured body, 200... Semiconductor device, D...Die bonding film, Da, Dc, Dcc...Adhesive layer, W...Semiconductor wafer, Wa...Semiconductor chip.

Claims (3)

A laminate comprising a support member, an adhesive layer containing conductive particles and a thermosetting resin component, and a semiconductor chip in this order is heated in two or more stages, and the reaction rate of the adhesive layer is 70. a first curing step to obtain a first cured product having a hardness of ~80%;
a second curing step in which the first cured product is further heated to obtain a second cured product in which the reaction rate of the adhesive layer exceeds 80%;
Equipped with
A method for manufacturing a semiconductor device. The first curing step is a step of heating the laminate in a range of 100 to 160° C. in two or more stages,
A method for manufacturing a semiconductor device according to claim 1. The first curing step is a step of heating the laminate in multiple stages, including two steps: heating the laminate at a temperature of 100° C. or higher and lower than 140° C. and heating the laminate at a temperature of 140° C. or higher and lower than 160° C. is,
A method for manufacturing a semiconductor device according to claim 1 or 2.

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