WO2021006158A1 - Integrated dicing/die bonding film, die bonding film, and method for producing semiconductor device - Google Patents
Integrated dicing/die bonding film, die bonding film, and method for producing semiconductor device Download PDFInfo
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- WO2021006158A1 WO2021006158A1 PCT/JP2020/025891 JP2020025891W WO2021006158A1 WO 2021006158 A1 WO2021006158 A1 WO 2021006158A1 JP 2020025891 W JP2020025891 W JP 2020025891W WO 2021006158 A1 WO2021006158 A1 WO 2021006158A1
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- WIPO (PCT)
- Prior art keywords
- die bonding
- bonding film
- dicing
- film
- adhesive layer
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Abstract
Description
図1は、ダイボンディングフィルムの一実施形態を示す模式断面図である。図1に示されるダイボンディングフィルム10は、第1の表面10A及び第1の表面10Aと反対側の第2の表面10Bを有する。第1の表面10Aは、後述のとおり、ダイシングテープの粘着層上に配置される表面であり得る。ダイボンディングフィルム10は、図1に示すとおり、支持フィルム20上に設けられていてもよい。ダイボンディングフィルム10は、熱硬化性であり、半硬化(Bステージ)状態を経て、硬化処理後に完全硬化物(Cステージ)状態となり得る。 [Die bonding film]
FIG. 1 is a schematic cross-sectional view showing an embodiment of a die bonding film. The
(a)成分は、ダイボンディングフィルムにおける放熱性を高めるために用いられる成分である。(a)成分としては、例えば、ニッケル粒子、銅粒子、銀粒子、アルミニウム粒子等の金属粒子;カーボンブラック粒子等の炭素粒子;カーボンナノチューブ等の繊維状炭素粒子;金属粒子、樹脂粒子等のコア粒子の表面を導電性材料からなる層で被覆した粒子などが挙げられる。これらは、1種を単独で又は2種以上を組み合わせて用いてもよい。これらの中でも、(a)成分は、金属粒子又は金属粒子の表面を金属層で被覆した金属被覆金属粒子であってよい。 Component (a): Conductive particles The component (a) is a component used to enhance heat dissipation in a die bonding film. The component (a) includes, for example, metal particles such as nickel particles, copper particles, silver particles, and aluminum particles; carbon particles such as carbon black particles; fibrous carbon particles such as carbon nanotubes; cores such as metal particles and resin particles. Examples thereof include particles in which the surface of the particles is coated with a layer made of a conductive material. These may be used individually by 1 type or in combination of 2 or more type. Among these, the component (a) may be a metal particle or a metal-coated metal particle in which the surface of the metal particle is coated with a metal layer.
(b)成分は、加熱等によって、分子間で三次元的な結合を形成し硬化する性質を有する成分であり、硬化後に接着作用を示す成分である。(b)成分は、エポキシ樹脂であってよい。(b)成分は、25℃で液状のエポキシ樹脂を含んでいてもよい。エポキシ樹脂は、分子内にエポキシ基を有するものであれば、特に制限なく用いることができる。エポキシ樹脂は、分子内に2以上のエポキシ基を有しているものであってよい。 Component (b): Thermosetting resin The component (b) is a component having a property of forming a three-dimensional bond between molecules and being cured by heating or the like, and is a component that exhibits an adhesive action after curing. The component (b) may be an epoxy resin. The component (b) may contain an epoxy resin that is liquid at 25 ° C. The epoxy resin can be used without particular limitation as long as it has an epoxy group in the molecule. The epoxy resin may have two or more epoxy groups in the molecule.
(c)成分は、エポキシ樹脂の硬化剤となり得るフェノール樹脂であってよい。フェノール樹脂は、分子内にフェノール性水酸基を有するものであれば特に制限なく用いることができる。フェノール樹脂としては、例えば、フェノール、クレゾール、レゾルシン、カテコール、ビスフェノールA、ビスフェノールF、フェニルフェノール、アミノフェノール等のフェノール類及び/又はα-ナフトール、β-ナフトール、ジヒドロキシナフタレン等のナフトール類とホルムアルデヒド等のアルデヒド基を有する化合物とを酸性触媒下で縮合又は共縮合させて得られるノボラック型フェノール樹脂、アリル化ビスフェノールA、アリル化ビスフェノールF、アリル化ナフタレンジオール、フェノールノボラック、フェノール等のフェノール類及び/又はナフトール類とジメトキシパラキシレン又はビス(メトキシメチル)ビフェニルから合成されるフェノールアラルキル樹脂、ナフトールアラルキル樹脂、ビフェニルアラルキル型フェノール樹脂、フェニルアラルキル型フェノール樹脂などが挙げられる。これらは、1種を単独で又は2種以上を組み合わせて用いてもよい。 Component (c): Curing agent The component (c) may be a phenol resin that can serve as a curing agent for the epoxy resin. The phenol resin can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule. Examples of the phenol resin include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol, and / or naphthols such as α-naphthol, β-naphthol and dihydroxynaphthalene, and formaldehyde and the like. Phenols such as novolak-type phenol resin, allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolac, and phenol obtained by condensing or co-condensing with a compound having an aldehyde group of Alternatively, a phenol aralkyl resin synthesized from naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl, a naphthol aralkyl resin, a biphenyl aralkyl type phenol resin, a phenyl aralkyl type phenol resin and the like can be mentioned. These may be used individually by 1 type or in combination of 2 or more type.
(d)成分としては、例えば、ポリイミド樹脂、アクリル樹脂、ウレタン樹脂、ポリフェニレンエーテル樹脂、ポリエーテルイミド樹脂、フェノキシ樹脂、変性ポリフェニレンエーテル樹脂等が挙げられる。(d)成分は、これらの樹脂であって、架橋性官能基を有するものであってよく、架橋性官能基を有するアクリル樹脂であってよい。ここで、アクリル樹脂とは、(メタ)アクリル酸エステルに由来する構成単位を含むポリマーを意味する。アクリル樹脂は、構成単位として、エポキシ基、アルコール性又はフェノール性水酸基、カルボキシ基等の架橋性官能基を有する(メタ)アクリル酸エステルに由来する構成単位を含むポリマーであってよい。また、アクリル樹脂は、(メタ)アクリル酸エステルとアクリルニトリルとの共重合体等のアクリルゴムであってもよい。これらは、1種を単独で又は2種以上を組み合わせて用いてもよい。 Component (d): Elastomer Examples of the component (d) include polyimide resin, acrylic resin, urethane resin, polyphenylene ether resin, polyetherimide resin, phenoxy resin, and modified polyphenylene ether resin. The component (d) may be these resins having a crosslinkable functional group, or may be an acrylic resin having a crosslinkable functional group. Here, the acrylic resin means a polymer containing a structural unit derived from a (meth) acrylic acid ester. The acrylic resin may be a polymer containing a structural unit derived from a (meth) acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxy group as a structural unit. Further, the acrylic resin may be an acrylic rubber such as a copolymer of (meth) acrylic acid ester and acrylonitrile. These may be used individually by 1 type or in combination of 2 or more type.
ポンプ:L-6000(株式会社日立製作所製)
カラム:ゲルパック(Gelpack)GL-R440(日立化成株式会社製)、ゲルパック(Gelpack)GL-R450(日立化成株式会社製)、及びゲルパックGL-R400M(日立化成株式会社製)(各10.7mm(直径)×300mm)をこの順に連結したカラム
溶離液:テトラヒドロフラン(以下、「THF」という。)
サンプル:試料120mgをTHF5mLに溶解させた溶液
流速:1.75mL/分 (D) The measuring device for the weight average molecular weight (Mw) of the component, the measuring conditions, and the like are as follows, for example.
Pump: L-6000 (manufactured by Hitachi, Ltd.)
Columns: Gelpack GL-R440 (manufactured by Hitachi Kasei Co., Ltd.), Gelpack GL-R450 (manufactured by Hitachi Kasei Co., Ltd.), and Gelpack GL-R400M (manufactured by Hitachi Kasei Co., Ltd.) (10.7 mm each (10.7 mm each) Column eluent in which (diameter) x 300 mm) are connected in this order: tetrahydrofuran (hereinafter referred to as "THF")
Sample: Solution of 120 mg of sample dissolved in 5 mL of THF Flow rate: 1.75 mL / min
ダイボンディングフィルムが(e)成分を含有することによって、接着性と接続信頼性とをより両立することができる傾向にある。(e)成分としては、例えば、イミダゾール類及びその誘導体、有機リン系化合物、第二級アミン類、第三級アミン類、第四級アンモニウム塩等が挙げられる。これらは、1種を単独で又は2種以上を組み合わせて用いてもよい。これらの中でも、(e)成分は、反応性の観点から、イミダゾール類及びその誘導体であってよい。 Component (e): Curing accelerator By containing the component (e) in the die bonding film, there is a tendency that adhesiveness and connection reliability can be more compatible. Examples of the component (e) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts and the like. These may be used individually by 1 type or in combination of 2 or more type. Among these, the component (e) may be imidazoles and derivatives thereof from the viewpoint of reactivity.
図2は、ダイシング・ダイボンディング一体型フィルムの一実施形態を示す模式断面図である。図2に示されるダイシング・ダイボンディング一体型フィルム100は、基材40と基材40上に設けられた粘着層30とを有するダイシングテープ50と、第1の表面10A及び第1の表面10Aと反対側の第2の表面10Bを有し、ダイシングテープ50の粘着層30上に、粘着層30と第1の表面10Aとが接するように配置されたダイボンディングフィルム10とを備える。ダイシング・ダイボンディング一体型フィルム100は、ダイボンディングフィルム10の第2の表面10B上に支持フィルム20が備えられていてもよい。 [Dicing / die bonding integrated film]
FIG. 2 is a schematic cross-sectional view showing an embodiment of a dicing / die bonding integrated film. The dicing / die bonding integrated
図3は、半導体装置の製造方法の一実施形態を示す模式断面図である。図3(a)、(b)、(c)、(d)、(e)、及び(f)は、各工程を模式的に示す断面図である。半導体装置の製造方法は、上記のダイシング・ダイボンディング一体型フィルム100のダイボンディングフィルム10(接着剤層)の第2の表面10Bを半導体ウェハWに貼り付ける工程(ウェハラミネート工程、図3(a)、(b)参照)と、半導体ウェハW、ダイボンディングフィルム10(接着剤層)、及び粘着層30を個片化する工程(ダイシング工程、図3(c)参照)と、必要に応じて、粘着層30に対して(基材40を介して)紫外線を照射する工程(紫外線照射工程、図3(d)参照)と、粘着層30aからダイボンディングフィルム片10aが付着した半導体チップWa(接着剤片付き半導体素子60)をピックアップする工程(ピックアップ工程、図3(e)参照)と、ダイボンディングフィルム片10aを介して、接着剤片付き半導体素子60を支持基板80に接着する工程(半導体素子接着工程、図3(f)参照))とを備える。 [Manufacturing method of semiconductor device (semiconductor package)]
FIG. 3 is a schematic cross-sectional view showing an embodiment of a method for manufacturing a semiconductor device. 3 (a), (b), (c), (d), (e), and (f) are cross-sectional views schematically showing each step. The method for manufacturing the semiconductor device is a step of attaching the
まず、ダイシング・ダイボンディング一体型フィルム100を所定の装置に配置する。続いて、ダイシング・ダイボンディング一体型フィルム100のダイボンディングフィルム10(接着剤層)の第2の表面10Bを半導体ウェハWの表面Wsに貼り付ける(図3(a)、(b)参照)。半導体ウェハWの回路面は、表面Wsとは反対側の面に設けられていることが好ましい。 <Wafer laminating process>
First, the dicing / die bonding integrated
次に、半導体ウェハW及びダイボンディングフィルム10(接着剤層)をダイシングする(図3(c)参照)。このとき、粘着層30の一部、又は、粘着層30の全部及び基材40の一部がダイシングされていてもよい。このように、ダイシング・ダイボンディング一体型フィルム100は、ダイシングシートとしても機能する。 <Dicing process>
Next, the semiconductor wafer W and the die bonding film 10 (adhesive layer) are diced (see FIG. 3C). At this time, a part of the
粘着層30が紫外線硬化型の粘着剤からなるものである場合は、必要に応じて、粘着層30に対して(基材40を介して)紫外線を照射してもよい(図3(d)参照)。紫外線硬化型の粘着剤である場合、当該粘着層30が硬化し、粘着層30とダイボンディングフィルム10(接着剤層)との間の接着力を低下させることができる。紫外線照射においては、波長200~400nmの紫外線を用いることが好ましい。紫外線照射条件は、照度及び照射量をそれぞれ30~240mW/cm2の範囲及び50~500mJ/cm2の範囲に調整することが好ましい。 <Ultraviolet irradiation process>
When the
次に、基材40をエキスパンドすることによって、ダイシングされた接着剤片付き半導体素子60を互いに離間させつつ、基材40側からニードル72で突き上げられた接着剤片付き半導体素子60を吸引コレット74で吸引して粘着層30aからピックアップする(図3(e)参照)。なお、接着剤片付き半導体素子60は、半導体チップWaとダイボンディングフィルム片10aとを有する。半導体チップWaは半導体ウェハWがダイシングによって個片化されたものであり、ダイボンディングフィルム片10aはダイボンディングフィルム10がダイシングによって個片化されたものである。また、粘着層30aは粘着層30がダイシングによって個片化されたものである。粘着層30aは接着剤片付き半導体素子60をピックアップする際に基材40上に残存し得る。ピックアップ工程では、必ずしも基材40をエキスパンドすることは必要ないが、基材40をエキスパンドすることによってピックアップ性をより向上させることができる。 <Pickup process>
Next, by expanding the
接着剤片付き半導体素子60をピックアップした後、接着剤片付き半導体素子60を、熱圧着によって、ダイボンディングフィルム片10aを介して支持基板80に接着する(図3(f)参照)。支持基板80には、複数の接着剤片付き半導体素子60を接着してもよい。 <Semiconductor element bonding process>
After picking up the
表1に示す記号及び組成比(単位:質量部)で、(b)熱硬化性樹脂としてのエポキシ樹脂、(c)硬化剤としてのフェノール樹脂、及び(d)エラストマーとしてのアクリルゴムにシクロヘキサノンを加え、撹拌することによって混合物を得た。各成分が溶解した後、混合物に(a)導電性粒子を加えて、ディスパー翼を用いて撹拌し、各成分が均一になるまで分散した。その後、(e)硬化促進剤を加え、各成分が均一になるまで分散することによって、接着剤ワニスA~Eを得た。 <Preparation of adhesive varnish>
Cyclohexanone was added to (b) epoxy resin as a thermosetting resin, (c) phenol resin as a curing agent, and (d) acrylic rubber as an elastomer according to the symbols and composition ratios (unit: parts by mass) shown in Table 1. In addition, a mixture was obtained by stirring. After each component was dissolved, (a) conductive particles were added to the mixture, and the mixture was stirred using a disper blade and dispersed until each component became uniform. Then, (e) a curing accelerator was added, and each component was dispersed until uniform to obtain adhesive varnishes A to E.
・20%Ag-Cu-MA(福田金属箔粉工業株式会社製、銀コート銅粉の製品名、形状:フレーク状、平均粒径(レーザー50%粒径(D50)):6.0~8.8μm)
・AO-UCI-9(DOWAエレクトロニクス株式会社製、銀コート銅粉の製品名、形状:球状、平均粒径(レーザー50%粒径(D50)):2.3μm) (A) Conductive particles ・ 20% Ag-Cu-MA (manufactured by Fukuda Metal Foil Powder Industry Co., Ltd., product name of silver-coated copper powder, shape: flakes, average particle size (
-AO-UCI-9 (Product name of silver-coated copper powder manufactured by DOWA Electronics Co., Ltd., shape: spherical, average particle size (
・N500P-10(商品名、DIC株式会社製、ビスフェノール型エポキシ樹脂、エポキシ当量:203g/eq)
・YDCN-700-10(商品名、日鉄ケミカル&マテリアル株式会社製、クレゾールノボラック型エポキシ樹脂、エポキシ当量:215g/eq)
・EXA-830CRP(商品名、DIC株式会社製、ビスフェノール型エポキシ樹脂、エポキシ当量:159g/eq、25℃で液状) (B) Thermosetting resin N500P-10 (trade name, manufactured by DIC Corporation, bisphenol type epoxy resin, epoxy equivalent: 203 g / eq)
-YDCN-700-10 (trade name, manufactured by Nippon Steel Chemical & Materials Co., Ltd., cresol novolac type epoxy resin, epoxy equivalent: 215 g / eq)
-EXA-830CRP (trade name, manufactured by DIC Corporation, bisphenol type epoxy resin, epoxy equivalent: 159 g / eq, liquid at 25 ° C)
・MEH-7800M(商品名、明和化成株式会社製、フェノール樹脂、粘度(150℃):0.31~0.43Pa・s(3.1~4.3poise)、水酸基当量:175g/eq)
・HE-100C-30(商品名、エア・ウォーター株式会社製、フェニルアラキル型フェノール樹脂、粘度(150℃):0.27~0.41Pa・s(2.7~4.1poise)、水酸基当量:170g/eq) (C) Hardener MEH-7800M (trade name, manufactured by Meiwa Kasei Co., Ltd., phenol resin, viscosity (150 ° C.): 0.31 to 0.43 Pa · s (3.1 to 4.3 poise), hydroxyl group equivalent: 175g / eq)
HE-100C-30 (trade name, manufactured by Air Water Inc., phenylarakil type phenol resin, viscosity (150 ° C.): 0.27 to 0.41 Pa · s (2.7 to 4.1 poise), hydroxyl group Equivalent: 170 g / eq)
・HTR-860P-3(商品名、ナガセケムテックス株式会社製、グリシジル基含有アクリルゴム、重量平均分子量:100万、Tg:-7℃) (D) Elastomer HTR-860P-3 (trade name, manufactured by Nagase ChemteX Corporation, glycidyl group-containing acrylic rubber, weight average molecular weight: 1 million, Tg: -7 ° C.)
・キュアゾール2PZ-CN(商品名、四国化成工業株式会社製、1-シアノエチル-2-フェニルイミダゾール) (E) Curing accelerator, Curesol 2PZ-CN (trade name, manufactured by Shikoku Chemicals Corporation, 1-cyanoethyl-2-phenylimidazole)
<ダイボンディングフィルムの作製>
ダイボンディングフィルムの作製に、接着剤ワニスBを用いた。真空脱泡した接着剤ワニスBを、支持フィルムである離型処理を施したポリエチレンテレフタレート(PET)フィルム(厚み38μm)上に塗布した。塗布したワニスを、90℃で5分間、続いて140℃で5分間の2段階で加熱乾燥し、支持フィルム上に、Bステージ状態にある厚み20μmのダイボンディングフィルムを作製した。作製したダイボンディングフィルムの支持フィルムとは反対側の面が第1の表面であり、ダイボンディングフィルムの支持フィルムと接している表面が第2の表面である。作製したダイボンディングフィルムの第1の表面を、温度140℃、圧力0.5MPa、及び速度0.1m/分の条件でゴムロールを用いてPETフィルムを介して押圧して当該面の平滑化処理を行い、実施例1のダイボンディングフィルムを得た。 (Example 1)
<Making a die bonding film>
Adhesive varnish B was used to prepare the die bonding film. The vacuum-defoamed adhesive varnish B was applied onto a support film, a polyethylene terephthalate (PET) film (thickness 38 μm) that had undergone a mold release treatment. The applied varnish was heat-dried at 90 ° C. for 5 minutes and then at 140 ° C. for 5 minutes in two steps to prepare a die bonding film having a thickness of 20 μm in a B stage state on the support film. The surface of the produced die bonding film opposite to the support film is the first surface, and the surface of the die bonding film in contact with the support film is the second surface. The first surface of the produced die bonding film is pressed through the PET film using a rubber roll under the conditions of a temperature of 140 ° C., a pressure of 0.5 MPa, and a speed of 0.1 m / min to smooth the surface. This was performed to obtain the die bonding film of Example 1.
実施例1のダイボンディングフィルムの表面について、表面粗さの測定を行った。表面粗さ(算術平均粗さRa(JIS B 0601-2001))は、形状測定レーザマイクロスコープVK-X100(キーエンス株式会社製)を用いて倍率50倍で測定することによって求めた。ダイボンディングフィルムの支持フィルムとは反対側の面(第1の表面)の表面粗さは、表面が露出していることからそのまま測定した。ダイボンディングフィルムの支持フィルムと接している表面(第2の表面)の表面粗さは、支持フィルムを剥がして表面を露出させてから測定した。結果を表2に示す。 <Measurement of surface roughness>
The surface roughness of the surface of the die bonding film of Example 1 was measured. The surface roughness (arithmetic mean roughness Ra (JIS B 0601-2001)) was determined by measuring at a magnification of 50 times using a shape measurement laser microscope VK-X100 (manufactured by KEYENCE CORPORATION). The surface roughness of the surface (first surface) of the die bonding film opposite to the support film was measured as it was because the surface was exposed. The surface roughness of the surface (second surface) of the die bonding film in contact with the support film was measured after the support film was peeled off to expose the surface. The results are shown in Table 2.
(積層体の作製)
Leon13DX(株式会社ラミーコーポレーション製)を用いて、厚みが100μm以上になるようにダイボンディングフィルムを70℃でラミネートして積層体を得た。 <Measurement of thermal conductivity>
(Preparation of laminate)
Using Leon13DX (manufactured by Rummy Corporation), a die bonding film was laminated at 70 ° C. so as to have a thickness of 100 μm or more to obtain a laminate.
積層体に対して、110℃で30分間、175℃で180分間の熱履歴を与え、測定試料を得た。 (Preparation of measurement sample)
The laminate was subjected to a thermal history at 110 ° C. for 30 minutes and 175 ° C. for 180 minutes to obtain a measurement sample.
測定試料の熱伝導率は、下記式によって算出した。結果を表2に示す。
熱伝導率(W/m・K)=比熱(J/kg・K)×熱拡散率(m2/s)×比重(kg/m3)
なお、比熱、熱拡散率、及び比重は以下の方法によって測定した。熱伝導率が高くなることは、放熱性により優れることを意味する。 (Measurement of thermal conductivity)
The thermal conductivity of the measurement sample was calculated by the following formula. The results are shown in Table 2.
Thermal conductivity (W / m · K) = specific heat (J / kg · K) x thermal diffusivity (m 2 / s) x specific gravity (kg / m 3 )
The specific heat, thermal diffusivity, and specific gravity were measured by the following methods. Higher thermal conductivity means better heat dissipation.
・測定装置:示差走査熱量測定装置(株式会社パーキンエルマージャパン製、商品名:DSC8500)
・基準物質:サファイア
・昇温速度:10℃/分
・昇温温度範囲:20℃~100℃ (Measurement of specific heat (25 ° C))
-Measuring device: Differential scanning calorimetry device (manufactured by PerkinElmer Japan Co., Ltd., product name: DSC8500)
・ Reference substance: Sapphire ・ Temperature rise rate: 10 ℃ / min ・ Temperature range: 20 ℃ ~ 100 ℃
・測定装置:熱拡散率測定装置(ネッチ・ジャパン株式会社社製、商品名:LFA467 HyperFlash)
・測定試料の処理:測定試料の両面をカーボンスプレーで黒化処理
・測定方法:キセノンフラッシュ法
・測定雰囲気温度:25℃ (Measurement of thermal diffusivity)
-Measuring device: Thermal diffusivity measuring device (manufactured by Netch Japan Co., Ltd., product name: LFA467 HyperFlash)
-Measurement sample processing: Blackening both sides of the measurement sample with carbon spray-Measurement method: Xenon flash method-Measurement atmosphere temperature: 25 ° C
・測定装置:電子比重計(アルファミラージュ株式会社製、商品名:SD200L)
・測定方法:アルキメデス法 (Measurement of specific gravity)
-Measuring device: Electronic hydrometer (manufactured by Alpha Mirage Co., Ltd., product name: SD200L)
・ Measurement method: Archimedes method
基材と粘着層を備えるダイシングテープを用意し、実施例1のダイボンディングフィルムの第1の表面をダイシングテープの粘着層に25℃で貼り付けることによって、ダイボンディングフィルムとダイシングテープとを備える実施例1のダイシング・ダイボンディング一体型フィルムを得た。 <Making a dicing / die bonding integrated film>
An implementation in which a dicing tape provided with a base material and an adhesive layer is prepared, and the first surface of the dicing film of Example 1 is attached to the adhesive layer of the dicing tape at 25 ° C. to provide the dicing film and the dicing tape. The dicing / die bonding integrated film of Example 1 was obtained.
ダイボンディングフィルムの作製に、接着剤ワニスCを用い、温度60℃、圧力0.5MPa、及び速度0.1m/分の条件でゴムロールを用いて押圧して当該面の平滑化処理を行った以外は、実施例1と同様にして、実施例2のダイボンディングフィルムを得た。実施例2のダイボンディングフィルムについて、実施例1と同様にして、表面粗さ及び熱伝導率を測定した。結果を表2に示す。また、実施例1と同様にして、実施例2のダイシング・ダイボンディング一体型フィルムを得た。 (Example 2)
For the production of the die bonding film, the adhesive varnish C was used, and the surface was smoothed by pressing with a rubber roll under the conditions of a temperature of 60 ° C., a pressure of 0.5 MPa, and a speed of 0.1 m / min. Obtained the die bonding film of Example 2 in the same manner as in Example 1. For the die bonding film of Example 2, the surface roughness and thermal conductivity were measured in the same manner as in Example 1. The results are shown in Table 2. Further, in the same manner as in Example 1, a dicing / die bonding integrated film of Example 2 was obtained.
ダイボンディングフィルムの作製に、接着剤ワニスDを用い、平滑化処理を行わなかった以外は、実施例1と同様にして、実施例3のダイボンディングフィルムを得た。実施例3のダイボンディングフィルムについて、実施例1と同様にして、表面粗さ及び熱伝導率を測定した。結果を表2に示す。また、実施例1と同様にして、実施例3のダイシング・ダイボンディング一体型フィルムを得た。 (Example 3)
An adhesive varnish D was used to prepare the die bonding film, and the die bonding film of Example 3 was obtained in the same manner as in Example 1 except that the smoothing treatment was not performed. For the die bonding film of Example 3, the surface roughness and thermal conductivity were measured in the same manner as in Example 1. The results are shown in Table 2. Further, in the same manner as in Example 1, a dicing / die bonding integrated film of Example 3 was obtained.
ダイボンディングフィルムの作製に、接着剤ワニスEを用い、平滑化処理を行わなかった以外は、実施例1と同様にして、実施例4のダイボンディングフィルムを得た。実施例4のダイボンディングフィルムについて、実施例1と同様にして、表面粗さ及び熱伝導率を測定した。結果を表2に示す。また、実施例1と同様にして、実施例4のダイシング・ダイボンディング一体型フィルムを得た。 (Example 4)
An adhesive varnish E was used to prepare the die bonding film, and the die bonding film of Example 4 was obtained in the same manner as in Example 1 except that the smoothing treatment was not performed. For the die bonding film of Example 4, the surface roughness and thermal conductivity were measured in the same manner as in Example 1. The results are shown in Table 2. Further, in the same manner as in Example 1, a dicing / die bonding integrated film of Example 4 was obtained.
ダイボンディングフィルムの作製に、接着剤ワニスAを用い、平滑化処理を行わなかった以外は、実施例1と同様にして、比較例1のダイボンディングフィルムを得た。比較例1のダイボンディングフィルムについて、実施例1と同様にして、表面粗さ及び熱伝導率を測定した。結果を表2に示す。また、実施例1と同様にして、比較例1のダイシング・ダイボンディング一体型フィルムを得た。 (Comparative Example 1)
A die bonding film of Comparative Example 1 was obtained in the same manner as in Example 1 except that the adhesive varnish A was used for producing the die bonding film and no smoothing treatment was performed. For the die bonding film of Comparative Example 1, the surface roughness and the thermal conductivity were measured in the same manner as in Example 1. The results are shown in Table 2. Further, in the same manner as in Example 1, a dicing / die bonding integrated film of Comparative Example 1 was obtained.
平滑化処理を行わなかった以外は、実施例1と同様にして、比較例2のダイボンディングフィルムを得た。比較例2のダイボンディングフィルムについて、実施例1と同様にして、表面粗さ及び熱伝導率を測定した。結果を表2に示す。なお、ダイシング・ダイボンディング一体型フィルムの作製を試みたが、ダイボンディングフィルムの第1の表面と粘着層との密着性が充分でなく、実施例1と同様の方法では、ダイシング・ダイボンディング一体型フィルムは作製できなかった。 (Comparative Example 2)
A die bonding film of Comparative Example 2 was obtained in the same manner as in Example 1 except that the smoothing treatment was not performed. For the die bonding film of Comparative Example 2, the surface roughness and the thermal conductivity were measured in the same manner as in Example 1. The results are shown in Table 2. An attempt was made to produce a dicing / die bonding integrated film, but the adhesion between the first surface of the dicing film and the adhesive layer was not sufficient, and the same method as in Example 1 was used for dicing / die bonding. The body film could not be produced.
比較例3のダイシング・ダイボンディング一体型フィルムの作製に、比較例2のダイボンディングフィルムを用いた。まず、比較例2のダイボンディングフィルムにおいて、ダイボンディングフィルムの第1の表面を、別の支持フィルム(離型処理を施したポリエチレンテレフタレート(PET)フィルム(厚み38μm))に転写した。次いで、第2の表面側の支持フィルムを剥がし、露出した第2の表面を、比較例2と同様のダイシングテープの粘着層に25℃で貼り付け、比較例3のダイシング・ダイボンディング一体型フィルムを得た。 (Comparative Example 3)
The dicing / die bonding film of Comparative Example 2 was used for producing the dicing / die bonding integrated film of Comparative Example 3. First, in the die bonding film of Comparative Example 2, the first surface of the die bonding film was transferred to another support film (polyethylene terephthalate (PET) film (thickness 38 μm) subjected to a mold release treatment). Next, the support film on the second surface side was peeled off, and the exposed second surface was attached to the adhesive layer of the dicing tape similar to Comparative Example 2 at 25 ° C., and the dicing / die bonding integrated film of Comparative Example 3 was attached. Got
実施例1~4及び比較例1、3のダイシング・ダイボンディング一体型フィルムを用意した。ダイシング・ダイボンディング一体型フィルムの支持フィルムを剥がして、フィルムラミネータ(テイコクテーピングシステム株式会社製)を用いて、ダイシング・ダイボンディング一体型フィルムのダイボンディングフィルム(接着剤層)を厚み100μmの半導体ウェハに貼り付けることによって試験体を得た。試験体を2mm×2mmのサイズにダイシングによって個片化した後に、試験体を観察し、ダイボンディングフィルム片(接着剤層)と粘着層との密着性及びダイボンディングフィルム片(接着剤層)と半導体ウェハとの密着性を評価した。ダイシングには、2枚のブレードを用いるステップカット方式で行い、ダイシングブレードSD4000-BB及びSD4000-DDを用いた。ステップカット方式では、1回目のカットで半導体ウェハの深さの50μmの位置までダイシングを行い、その後、2回目のカットでダイシングテープの基材の深さ20μmの位置までダイシングを行った。ダイシングの条件は、ブレード回転数4000rpm、切断速度30mm/秒とした。ダイシングした後、ダイボンディングフィルム片(接着剤層)と粘着層との間を観察し、剥がれがなかったものを「A」、剥がれがあったものを「B」と評価した。ダイボンディングフィルム片(接着剤層)と半導体ウェハとの間を観察し、剥がれがなかったものを「A」、剥がれがあったものを「B」と評価した。結果を表2に示す。 <Evaluation of adhesion in dicing process>
The dicing / die bonding integrated films of Examples 1 to 4 and Comparative Examples 1 and 3 were prepared. Peel off the support film of the dicing / die bonding integrated film, and use a film laminator (manufactured by Teikoku Taping System Co., Ltd.) to apply the dicing / die bonding integrated film die bonding film (adhesive layer) to a semiconductor wafer with a thickness of 100 μm. A test piece was obtained by pasting on. After the test piece is separated into pieces by dicing to a size of 2 mm × 2 mm, the test piece is observed, and the adhesion between the die bonding film piece (adhesive layer) and the adhesive layer and the die bonding film piece (adhesive layer) The adhesion with the semiconductor wafer was evaluated. Dicing was performed by a step-cut method using two blades, and dicing blades SD4000-BB and SD4000-DD were used. In the step cut method, dicing was performed to a position of 50 μm in the depth of the semiconductor wafer in the first cut, and then dicing was performed to a position of 20 μm in the base material of the dicing tape in the second cut. The dicing conditions were a blade rotation speed of 4000 rpm and a cutting speed of 30 mm / sec. After dicing, the space between the die bonding film piece (adhesive layer) and the adhesive layer was observed, and the one without peeling was evaluated as "A" and the one with peeling was evaluated as "B". The space between the die bonding film piece (adhesive layer) and the semiconductor wafer was observed, and the one without peeling was evaluated as "A", and the one with peeling was evaluated as "B". The results are shown in Table 2.
Claims (19)
- 基材と前記基材上に設けられた粘着層とを有するダイシングテープと、
第1の表面及び前記第1の表面と反対側の第2の表面を有し、前記ダイシングテープの前記粘着層上に、前記粘着層と前記第1の表面とが接するように配置されたダイボンディングフィルムと、
を備え、
前記ダイボンディングフィルムが、ダイボンディングフィルムの全量を基準として、75質量%以上の導電性粒子を含有し、
前記ダイボンディングフィルムにおいて、前記第1の表面の表面粗さが1.0μm以下であり、かつ前記第2の表面の表面粗さが1.0μm以下である、
ダイシング・ダイボンディング一体型フィルム。 A dicing tape having a base material and an adhesive layer provided on the base material,
A die having a first surface and a second surface opposite to the first surface, and arranged on the adhesive layer of the dicing tape so that the adhesive layer and the first surface are in contact with each other. Bonding film and
With
The die bonding film contains 75% by mass or more of conductive particles based on the total amount of the die bonding film.
In the die bonding film, the surface roughness of the first surface is 1.0 μm or less, and the surface roughness of the second surface is 1.0 μm or less.
Dicing / die bonding integrated film. - 前記第1の表面の表面粗さが前記第2の表面の表面粗さよりも大きい、請求項1に記載のダイシング・ダイボンディング一体型フィルム。 The dicing / die bonding integrated film according to claim 1, wherein the surface roughness of the first surface is larger than the surface roughness of the second surface.
- 前記第1の表面の表面粗さが0.25μm以上である、請求項1又は2に記載のダイシング・ダイボンディング一体型フィルム。 The dicing / die bonding integrated film according to claim 1 or 2, wherein the surface roughness of the first surface is 0.25 μm or more.
- 前記ダイボンディングフィルムにおける熱伝導率が1.6W/m・K以上である、請求項1~3のいずれか一項に記載のダイシング・ダイボンディング一体型フィルム。 The dicing / die bonding integrated film according to any one of claims 1 to 3, wherein the die bonding film has a thermal conductivity of 1.6 W / m · K or more.
- 前記導電性粒子が球状である、請求項1~4のいずれか一項に記載のダイシング・ダイボンディング一体型フィルム。 The dicing / die bonding integrated film according to any one of claims 1 to 4, wherein the conductive particles are spherical.
- 前記導電性粒子の平均粒径が3.0μm以下である、請求項5に記載のダイシング・ダイボンディング一体型フィルム。 The dicing / die bonding integrated film according to claim 5, wherein the average particle size of the conductive particles is 3.0 μm or less.
- 前記導電性粒子が、熱伝導率(20℃)が250W/m・K以上である導電性粒子である、請求項1~6のいずれか一項に記載のダイシング・ダイボンディング一体型フィルム。 The dicing / die bonding integrated film according to any one of claims 1 to 6, wherein the conductive particles are conductive particles having a thermal conductivity (20 ° C.) of 250 W / m · K or more.
- 前記ダイボンディングフィルムが、熱硬化性樹脂、硬化剤、及びエラストマーをさらに含有する、請求項1~7のいずれか一項に記載のダイシング・ダイボンディング一体型フィルム。 The dicing / die bonding integrated film according to any one of claims 1 to 7, wherein the die bonding film further contains a thermosetting resin, a curing agent, and an elastomer.
- 前記熱硬化性樹脂が25℃で液状のエポキシ樹脂を含み、
前記25℃で液状のエポキシ樹脂の含有量が、ダイボンディングフィルムの全量を基準として、2質量%以上である、請求項8に記載のダイシング・ダイボンディング一体型フィルム。 The thermosetting resin contains an epoxy resin that is liquid at 25 ° C.
The dicing / die bonding integrated film according to claim 8, wherein the content of the epoxy resin liquid at 25 ° C. is 2% by mass or more based on the total amount of the die bonding film. - 請求項1~9のいずれか一項に記載のダイシング・ダイボンディング一体型フィルムの前記ダイボンディングフィルムの前記第2の表面を半導体ウェハに貼り付ける工程と、
前記半導体ウェハ及び前記ダイボンディングフィルムを個片化する工程と、
前記ダイシングテープからダイボンディングフィルム片が付着した半導体チップをピックアップする工程と、
前記ダイボンディングフィルム片を介して、前記半導体チップを支持基板に接着する工程と、
を備える、半導体装置の製造方法。 The step of attaching the second surface of the dicing / die bonding integrated film according to any one of claims 1 to 9 to the semiconductor wafer.
The step of separating the semiconductor wafer and the die bonding film into pieces, and
A process of picking up a semiconductor chip to which a die bonding film piece is attached from the dicing tape, and
A step of adhering the semiconductor chip to the support substrate via the die bonding film piece, and
A method for manufacturing a semiconductor device. - 第1の表面及び前記第1の表面と反対側の第2の表面を有するダイボンディングフィルムであって、
ダイボンディングフィルムの全量を基準として、75質量%以上の導電性粒子を含有し、
前記第1の表面の表面粗さが1.0μm以下であり、かつ前記第2の表面の表面粗さが1.0μm以下である、
ダイボンディングフィルム。 A die bonding film having a first surface and a second surface opposite to the first surface.
Containing 75% by mass or more of conductive particles based on the total amount of the die bonding film,
The surface roughness of the first surface is 1.0 μm or less, and the surface roughness of the second surface is 1.0 μm or less.
Die bonding film. - 前記第1の表面の表面粗さが前記第2の表面の表面粗さよりも大きい、請求項11に記載のダイボンディングフィルム。 The die bonding film according to claim 11, wherein the surface roughness of the first surface is larger than the surface roughness of the second surface.
- 前記第1の表面の表面粗さが0.25μm以上である、請求項11又は12に記載のダイボンディングフィルム。 The die bonding film according to claim 11 or 12, wherein the surface roughness of the first surface is 0.25 μm or more.
- 前記ダイボンディングフィルムにおける熱伝導率が1.6W/m・K以上である、請求項11~13のいずれか一項に記載のダイボンディングフィルム。 The die bonding film according to any one of claims 11 to 13, wherein the die bonding film has a thermal conductivity of 1.6 W / m · K or more.
- 前記導電性粒子が球状である、請求項11~14のいずれか一項に記載のダイボンディングフィルム。 The die bonding film according to any one of claims 11 to 14, wherein the conductive particles are spherical.
- 前記導電性粒子の平均粒径が3.0μm以下である、請求項15に記載のダイボンディングフィルム。 The die bonding film according to claim 15, wherein the average particle size of the conductive particles is 3.0 μm or less.
- 前記導電性粒子が、熱伝導率(20℃)が250W/m・K以上である導電性粒子である、請求項11~16のいずれか一項に記載のダイボンディングフィルム。 The die bonding film according to any one of claims 11 to 16, wherein the conductive particles are conductive particles having a thermal conductivity (20 ° C.) of 250 W / m · K or more.
- 熱硬化性樹脂、硬化剤、及びエラストマーをさらに含有する、請求項11~17のいずれか一項に記載のダイボンディングフィルム。 The die bonding film according to any one of claims 11 to 17, further containing a thermosetting resin, a curing agent, and an elastomer.
- 前記熱硬化性樹脂が25℃で液状のエポキシ樹脂を含み、
前記25℃で液状のエポキシ樹脂の含有量が、ダイボンディングフィルムの全量を基準として、2質量%以上である、請求項18に記載のダイボンディングフィルム。 The thermosetting resin contains an epoxy resin that is liquid at 25 ° C.
The die bonding film according to claim 18, wherein the content of the epoxy resin liquid at 25 ° C. is 2% by mass or more based on the total amount of the die bonding film.
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