WO2021006158A1 - Film intégré de découpage en dés/fixage de puce, film de fixage de puce et procédé de production de dispositif à semi-conducteur - Google Patents

Film intégré de découpage en dés/fixage de puce, film de fixage de puce et procédé de production de dispositif à semi-conducteur Download PDF

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Publication number
WO2021006158A1
WO2021006158A1 PCT/JP2020/025891 JP2020025891W WO2021006158A1 WO 2021006158 A1 WO2021006158 A1 WO 2021006158A1 JP 2020025891 W JP2020025891 W JP 2020025891W WO 2021006158 A1 WO2021006158 A1 WO 2021006158A1
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Prior art keywords
die bonding
bonding film
dicing
film
adhesive layer
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PCT/JP2020/025891
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English (en)
Japanese (ja)
Inventor
裕太 小関
祐樹 中村
大輔 山中
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昭和電工マテリアルズ株式会社
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Application filed by 昭和電工マテリアルズ株式会社 filed Critical 昭和電工マテリアルズ株式会社
Priority to KR1020217042101A priority Critical patent/KR20220030218A/ko
Priority to JP2021530652A priority patent/JPWO2021006158A1/ja
Priority to CN202080046101.6A priority patent/CN114008760A/zh
Publication of WO2021006158A1 publication Critical patent/WO2021006158A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B32B7/025—Electric or magnetic properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
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    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
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    • B32B2307/302—Conductive
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    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/50—Properties of the layers or laminate having particular mechanical properties
    • B32B2307/538—Roughness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
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    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present disclosure relates to a dicing / die bonding integrated film, a die bonding film, and a method for manufacturing a semiconductor device.
  • Patent Document 1 discloses an adhesive sheet (dicing / die bonding integrated film) having both a function of fixing a semiconductor wafer in a dicing process and a function of adhering a semiconductor chip to a substrate in a dicing process. In the dicing step, the semiconductor wafer and the adhesive layer are separated into individual pieces to obtain a chip with an adhesive piece.
  • Patent Document 2 discloses a conductive film-like adhesive having higher heat dissipation after curing than heat dissipation before curing, and a dicing tape with a film-like adhesive.
  • the present inventors sufficiently dissipate heat to the adhesive layer of a dicing / die bonding integrated film having an adhesive layer made of a die bonding film and an adhesive layer. It has been found that when conductive particles in an amount that can obtain properties (for example, 75% by mass or more based on the total amount of the dicing film) are blended, the adhesion between the adhesive layer and the adhesive layer tends to be insufficient. .. If the adhesion between the two is insufficient, there may be a problem that the dicing / die bonding integrated film cannot be formed, and even if the film can be formed, the tip with the adhesive piece is separated from the adhesive layer in the dicing process.
  • one aspect of the present disclosure is that the dicing / die bonding integrated film provided with the adhesive layer and the adhesive layer has excellent heat dissipation, excellent adhesion between the adhesive layer and the adhesive layer, and a semiconductor wafer. It is an object of the present invention to provide a dicing / die bonding integrated film having excellent adhesion between the adhesive layer and the semiconductor wafer even when the adhesive layer is attached to the wafer.
  • the dicing / die bonding integrated film has a dicing tape having a base material and an adhesive layer provided on the base material, and a first surface and a second surface opposite to the first surface, and dicing. On the adhesive layer of the tape, a dicing film arranged so that the adhesive layer and the first surface are in contact with each other is provided.
  • the die bonding film contains 75% by mass or more of conductive particles based on the total amount of the die bonding film.
  • the surface roughness of the first surface is 1.0 ⁇ m or less
  • the surface roughness of the second surface is 1.0 ⁇ m or less.
  • Such a dicing / die bonding integrated film has excellent heat dissipation, has excellent adhesion between an adhesive layer made of a die bonding film and an adhesive layer, and when attached to a semiconductor wafer, die bonding. Excellent adhesion between the adhesive layer made of film and the semiconductor wafer.
  • the surface roughness of the first surface is larger than the surface roughness of the second surface.
  • the adhesion between the die bonding film and the adhesive layer (dicing tape) at the time of dicing is excellent, and chip skipping and the like tend to be suppressed. ..
  • the surface roughness of the first surface may be 0.25 ⁇ m or more. That is, the surface roughness of the first surface may be 0.25 to 1.0 ⁇ m. When the surface roughness of the first surface is 1.0 ⁇ m or less, it tends to be possible to prevent a decrease in adhesiveness due to the surface roughness. On the other hand, when the surface roughness of the first surface is 0.25 ⁇ m or more, it tends to be possible to prevent a decrease in the anchor effect due to excessively high surface smoothness.
  • a dicing / die bonding integrated film including a die bonding film having a surface roughness of the first surface in such a range can further improve the adhesion between the adhesive layer made of the die bonding film and the adhesive layer. it can.
  • the thermal conductivity of the die bonding film may be 1.6 W / m ⁇ K or more.
  • the thermal conductivity of the die bonding film is 1.6 W / m ⁇ K or more, the dicing / die bonding integrated film tends to have better heat dissipation.
  • the conductive particles may be spherical. Further, the average particle size of the conductive particles may be 5.0 ⁇ m or less or 3.0 ⁇ m or less. By using such conductive particles, it tends to be easy to obtain a die bonding film having a predetermined surface roughness without performing a physical smoothing treatment.
  • the conductive particles may be conductive particles having a thermal conductivity (20 ° C.) of 250 W / m ⁇ K or more. By using such conductive particles, the dicing / die bonding integrated film has more excellent heat dissipation.
  • the die bonding film may further contain a thermosetting resin, a curing agent, and an elastomer.
  • the die bonding film containing these tends to easily adjust the surface roughness within a predetermined range.
  • the thermosetting resin may contain an epoxy resin that is liquid at 25 ° C.
  • the content of the epoxy resin may be 2% by mass or more based on the total amount of the die bonding film.
  • the thermosetting resin contains an epoxy resin liquid at 25 ° C. in a predetermined range, a die bonding film having a predetermined surface roughness tends to be easily obtained.
  • even when the physical smoothing process is performed it tends to be possible to perform the physical smoothing process under milder conditions.
  • One aspect of the present disclosure includes a step of attaching the second surface of the die bonding film of the dicing / die bonding integrated film to the semiconductor wafer, a step of separating the semiconductor wafer and the die bonding film into individual pieces, and a dicing tape.
  • a method for manufacturing a semiconductor device comprising a step of picking up a semiconductor chip to which a dicing film piece is attached and a step of adhering the semiconductor chip to a support substrate via the die bonding film piece.
  • the die bonding film has a first surface and a second surface opposite to the first surface, and contains 75% by mass or more of conductive particles based on the total amount of the die bonding film.
  • the surface roughness of the first surface is 1.0 ⁇ m or less
  • the surface roughness of the second surface is 1.0 ⁇ m or less.
  • the surface roughness of the first surface is preferably larger than the surface roughness of the second surface.
  • the surface roughness of the first surface may be 0.25 ⁇ m or more.
  • the thermal conductivity of the die bonding film may be 1.6 W / m ⁇ K or more.
  • the conductive particles may be spherical. Further, the average particle size of the conductive particles may be 5.0 ⁇ m or less or 3.0 ⁇ m or less.
  • the conductive particles may be conductive particles having a thermal conductivity (20 ° C.) of 250 W / m ⁇ K or more.
  • the die bonding film may further contain a thermosetting resin, a curing agent, and an elastomer.
  • the thermosetting resin may contain an epoxy resin that is liquid at 25 ° C. When the thermosetting resin contains an epoxy resin liquid at 25 ° C., the content of the epoxy resin may be 2% by mass or more based on the total amount of the die bonding film.
  • the dicing / die bonding integrated film in a dicing / die bonding integrated film provided with an adhesive layer and an adhesive layer, the dicing / die bonding integrated film has excellent heat dissipation, excellent adhesion between the adhesive layer and the adhesive layer, and is attached to a semiconductor wafer. Even in such a case, a dicing / die bonding integrated film having excellent adhesion between the adhesive layer and the semiconductor wafer is provided. Further, according to the present disclosure, there is provided a method for manufacturing a semiconductor device using such a dicing / die bonding integrated film. Further, according to the present disclosure, there is provided a die bonding film that is suitably used for such a dicing / die bonding integrated film.
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of a die bonding film.
  • FIG. 2 is a schematic cross-sectional view showing an embodiment of a dicing / die bonding integrated film.
  • FIG. 3 is a schematic cross-sectional view showing an embodiment of a method for manufacturing a semiconductor device. 3 (a), (b), (c), (d), (e), and (f) are cross-sectional views schematically showing each step.
  • FIG. 4 is a schematic cross-sectional view showing an embodiment of a semiconductor device.
  • the numerical range indicated by using "-" indicates a range including the numerical values before and after "-" as the minimum value and the maximum value, respectively.
  • the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of another numerical range described stepwise.
  • the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.
  • (meth) acrylate means acrylate or the corresponding methacrylate.
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of a die bonding film.
  • the die bonding film 10 shown in FIG. 1 has a first surface 10A and a second surface 10B opposite to the first surface 10A.
  • the first surface 10A may be a surface arranged on the adhesive layer of the dicing tape as described later.
  • the die bonding film 10 may be provided on the support film 20.
  • the die bonding film 10 is thermosetting and can be in a semi-cured (B stage) state and then in a completely cured product (C stage) state after a curing treatment.
  • the die bonding film 10 contains (a) conductive particles, and may further contain (b) a thermosetting resin, (c) a curing agent, and (d) an elastomer, if necessary.
  • Component (a) Conductive particles
  • the component (a) is a component used to enhance heat dissipation in a die bonding film.
  • the component (a) includes, for example, metal particles such as nickel particles, copper particles, silver particles, and aluminum particles; carbon particles such as carbon black particles; fibrous carbon particles such as carbon nanotubes; cores such as metal particles and resin particles. Examples thereof include particles in which the surface of the particles is coated with a layer made of a conductive material. These may be used individually by 1 type or in combination of 2 or more type.
  • the component (a) may be a metal particle or a metal-coated metal particle in which the surface of the metal particle is coated with a metal layer.
  • the component (a) may be metal particles composed of a metal having an electric conductivity (0 ° C.) of 40 ⁇ 10 6 S / m or more.
  • the metal particles may be metal particles composed of one kind of metal, or may be metal-coated metal particles composed of two or more kinds of metals. By using such metal particles, the heat dissipation property of the die bonding film can be further improved.
  • metals having an electric conductivity (0 ° C.) of 40 ⁇ 10 6 S / m or more include gold (49 ⁇ 10 6 S / m), silver (67 ⁇ 10 6 S / m), and copper (65 ⁇ ). 10 6 S / m) and the like.
  • the electrical conductivity (0 ° C.) may be 45 ⁇ 10 6 S / m or more or 50 ⁇ 10 6 S / m or more. That is, the metal particles are preferably composed of silver and / or copper.
  • the component (a) may be conductive particles having an electrical conductivity (0 ° C.) of 40 ⁇ 10 6 S / m or more, 45 ⁇ 10 6 S / m or more, or 50 ⁇ 10 6 S / m or more.
  • the component (a) may be metal particles composed of a metal having a thermal conductivity (20 ° C.) of 250 W / m ⁇ K or more.
  • the metal particles may be metal particles composed of one kind of metal, or may be metal-coated metal particles composed of two or more kinds of metals. By using such metal particles, the heat dissipation property of the die bonding film can be further improved.
  • metals having a thermal conductivity (20 ° C.) of 250 W / m ⁇ K or more include gold (295 W / m ⁇ K), silver (418 W / m ⁇ K), and copper (372 W / m ⁇ K).
  • the thermal conductivity (20 ° C.) may be 300 W / m ⁇ K or more or 350 W / m ⁇ K or more. That is, the metal particles are preferably composed of silver and / or copper.
  • the component (a) may be conductive particles having a thermal conductivity (20 ° C.) of 250 W / m ⁇ K or more, 300 W / m ⁇ K or more, or 350 W / m ⁇ K or more.
  • the component (a) is excellent in terms of electrical conductivity and thermal conductivity and is difficult to be oxidized. Therefore, it may be metal particles having silver on the surface, and more specifically, silver.
  • the particles or copper particles may be silver-coated copper particles (silver-coated copper powder) whose surface is coated with silver.
  • Silver particles and silver coated copper particles (silver-coated copper powder) the electrical conductivity (0 ° C.) is not less 50 ⁇ 10 6 S / m or more and the thermal conductivity (20 ° C.) is 350 W / m ⁇ K or higher possible.
  • the shape of the component (a) is not particularly limited and may be, for example, flaky or spherical, but the shape of the component (a) is preferably spherical.
  • the shape of the component (a) is spherical, it tends to be easy to obtain a die bonding film having a predetermined surface roughness without performing a physical smoothing treatment.
  • the average particle size of the component (a) may be 0.01 to 10 ⁇ m.
  • the average particle size of the component (a) is 0.01 ⁇ m or more, it is possible to prevent an increase in viscosity when the adhesive varnish is produced, and a desired amount of the component (a) can be contained in the die bonding film. There is a tendency to ensure the wettability of the die bonding film to the adherend and to exhibit better adhesiveness.
  • the average particle size of the component (a) is 10 ⁇ m or less, the film formability is more excellent, and the heat dissipation property due to the addition of the conductive particles tends to be further improved.
  • the average particle size of the component (a) may be 0.1 ⁇ m or more, 0.5 ⁇ m or more, 1.0 ⁇ m or more, or 1.5 ⁇ m or more, and may be 8.0 ⁇ m or less, 7.0 ⁇ m or less, 6.0 ⁇ m or less. , 5.0 ⁇ m or less, 4.0 ⁇ m or less, or 3.0 ⁇ m or less.
  • the average particle size of the component (a) means the particle size (D 50 ) when the ratio (volume fraction) to the volume of the entire component (a) is 50%.
  • a suspension in which the component (a) is suspended in water is subjected to a laser scattering method using a laser scattering type particle size measuring device (for example, Microtrac). It can be determined by measuring.
  • the component (a) is spherical particles and the average particle size thereof is 5.0 ⁇ m or less.
  • the content of the component (a) is 75% by mass or more based on the total amount of the die bonding film.
  • the content of the component (a) may be 77% by mass or more, 80% by mass or more, 83% by mass or more, or 85% by mass or more based on the total amount of the die bonding film.
  • the upper limit of the content of the component (a) is not particularly limited, but may be 95% by mass or less, 92% by mass or less, or 90% by mass or less based on the total amount of the die bonding film.
  • the content of the component (a) is 300 parts by mass or more, 400 parts by mass or more, 500 parts by mass or more, or 550 parts by mass or more with respect to 100 parts by mass of all the components other than the component (a) of the die bonding film. It may be there.
  • the content of the component (a) is 300 parts by mass or more with respect to 100 parts by mass of all the components other than the component (a) of the die bonding film, the thermal conductivity of the die bonding film can be improved. As a result, heat dissipation can be improved.
  • the upper limit of the content of the component (a) is not particularly limited, but the total amount of the components other than the component (a) of the die bonding film is 1900 parts by mass or less, 1200 parts by mass or less, and 1000 parts by mass or less with respect to 100 parts by mass. , Or 900 parts by mass or less.
  • Component (b) Thermosetting resin
  • the component (b) is a component having a property of forming a three-dimensional bond between molecules and being cured by heating or the like, and is a component that exhibits an adhesive action after curing.
  • the component (b) may be an epoxy resin.
  • the component (b) may contain an epoxy resin that is liquid at 25 ° C.
  • the epoxy resin can be used without particular limitation as long as it has an epoxy group in the molecule.
  • the epoxy resin may have two or more epoxy groups in the molecule.
  • the epoxy resin examples include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolac type epoxy resin, and bisphenol F novolac type epoxy resin.
  • Stilben type epoxy resin triazine skeleton containing epoxy resin, fluorene skeleton containing epoxy resin, triphenol methane type epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, biphenyl aralkyl type epoxy resin, naphthalene type epoxy resin, dicyclopentadiene type
  • examples thereof include epoxy resins, polyfunctional phenols, and polycyclic aromatic diglycidyl ether compounds such as anthracene. These may be used individually by 1 type or in combination of 2 or more type.
  • the epoxy resin may be a bisphenol type epoxy resin or a cresol novolac type epoxy resin from the viewpoint of heat resistance of the cured product and the like.
  • the component (b) may contain an epoxy resin that is liquid at 25 ° C.
  • an epoxy resin that is liquid at 25 ° C.
  • a die bonding film having a predetermined surface roughness tends to be easily obtained.
  • the physical smoothing process it tends to be possible to perform the physical smoothing process under milder conditions.
  • Examples of commercially available products of epoxy resins liquid at 25 ° C. include EXA-830CRP (trade name, manufactured by DIC Corporation), YDF-8170C (trade name, manufactured by Nippon Steel Chemical & Materials Co., Ltd.) and the like.
  • the epoxy equivalent of the epoxy resin is not particularly limited, but may be 90 to 300 g / eq, 110 to 290 g / eq, or 110 to 290 g / eq.
  • the epoxy equivalent of the component (A) is in such a range, it tends to be easy to secure the fluidity of the adhesive composition when forming the die bonding film while maintaining the bulk strength of the die bonding film.
  • the content of the component (b) may be 0.1% by mass or more, 1% by mass or more, 2% by mass or more, or 3% by mass or more, and is 15% by mass or less, based on the total amount of the die bonding film. It may be 12% by mass or less, 10% by mass or less, or 8% by mass or less.
  • the mass ratio of the epoxy resin to the component (b) is 10 to 100 as a percentage. %, 40-100%, 60% -100%, or 80% -100%.
  • the content of the epoxy resin is 1% by mass or more, 2% by mass or more, 3% by mass or more, or 4 based on the total amount of the die bonding film. It may be mass% or more.
  • the content of the epoxy resin may be 15% by mass or less, 12% by mass or less, 10% by mass or less, or 8% by mass or less.
  • the component (c) may be a phenol resin that can serve as a curing agent for the epoxy resin.
  • the phenol resin can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule.
  • examples of the phenol resin include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol, and / or naphthols such as ⁇ -naphthol, ⁇ -naphthol and dihydroxynaphthalene, and formaldehyde and the like.
  • Phenols such as novolak-type phenol resin, allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolac, and phenol obtained by condensing or co-condensing with a compound having an aldehyde group of
  • a phenol aralkyl resin synthesized from naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl, a naphthol aralkyl resin, a biphenyl aralkyl type phenol resin, a phenyl aralkyl type phenol resin and the like can be mentioned. These may be used individually by 1 type or in combination of 2 or more type.
  • the hydroxyl group equivalent of the phenol resin may be 40 to 300 g / eq, 70 to 290 g / eq, or 100 to 280 g / eq.
  • the hydroxyl group equivalent of the phenol resin is 40 g / eq or more, the storage elastic modulus of the film tends to be further improved, and when it is 300 g / eq or less, it is possible to prevent problems due to the generation of foaming, outgas, etc. ..
  • Ratio of the epoxy equivalent of the epoxy resin as the component (b) to the hydroxyl equivalent of the phenol resin as the component (b) / the epoxy equivalent of the epoxy resin as the component / the hydroxyl equivalent of the phenol resin as the component (c) ) Indicates 0.30 / 0.70 to 0.70 / 0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0 from the viewpoint of curability. It may be .60 / 0.40, or 0.45 / 0.55 to 0.55 / 0.45.
  • the equivalent amount ratio is 0.30 / 0.70 or more, more sufficient curability tends to be obtained.
  • the equivalent equivalent ratio is 0.70 / 0.30 or less, it is possible to prevent the viscosity from becoming too high, and it is possible to obtain more sufficient fluidity.
  • the content of the component (c) may be 0.1% by mass or more, 1% by mass or more, 2% by mass or more, or 3% by mass or more, based on the total amount of the die bonding film, and is 15% by mass or less. It may be 12% by mass or less, 10% by mass or less, or 8% by mass or less.
  • Component (d) Elastomer
  • the component (d) include polyimide resin, acrylic resin, urethane resin, polyphenylene ether resin, polyetherimide resin, phenoxy resin, and modified polyphenylene ether resin.
  • the component (d) may be these resins having a crosslinkable functional group, or may be an acrylic resin having a crosslinkable functional group.
  • the acrylic resin means a polymer containing a structural unit derived from a (meth) acrylic acid ester.
  • the acrylic resin may be a polymer containing a structural unit derived from a (meth) acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxy group as a structural unit.
  • the acrylic resin may be an acrylic rubber such as a copolymer of (meth) acrylic acid ester and acrylonitrile. These may be used individually by 1 type or in combination of 2 or more type.
  • acrylic resins examples include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, HTR-860P-3, HTR-860P-3CSP, HTR-860P-3CSP-3DB ( (Made by Nagase ChemteX Corporation) and the like.
  • the glass transition temperature (Tg) of the component (d) may be ⁇ 50 to 50 ° C. or ⁇ 30 to 20 ° C.
  • Tg of the acrylic resin is ⁇ 50 ° C. or higher, the tackiness of the die bonding film is lowered, so that the handleability tends to be further improved.
  • Tg of the acrylic resin is 50 ° C. or lower, the fluidity of the adhesive composition when forming the die bonding film tends to be more sufficiently secured.
  • the glass transition temperature (Tg) of the component (d) means a value measured using a DSC (thermal differential scanning calorimeter) (for example, manufactured by Rigaku Co., Ltd., trade name: Thermo Plus 2).
  • the weight average molecular weight (Mw) of the component (d) may be 50,000 to 1.2 million, 100,000 to 1.2 million, or 300,000 to 900,000. When the weight average molecular weight of the component (d) is 50,000 or more, the film forming property tends to be superior. When the weight average molecular weight of the component (d) is 1.2 million or less, the fluidity of the adhesive composition when forming the die bonding film tends to be superior.
  • the weight average molecular weight (Mw) is a value measured by gel permeation chromatography (GPC) and converted using a calibration curve using standard polystyrene.
  • the measuring device for the weight average molecular weight (Mw) of the component, the measuring conditions, and the like are as follows, for example.
  • the content of the component (d) may be 0.1% by mass or more, 0.5% by mass or more, 1% by mass or more, or 2% by mass or more based on the total amount of the die bonding film, and is 10% by mass. Hereinafter, it may be 8% by mass or less, 6% by mass or less, or 5% by mass or less.
  • the die bonding film 10 may further contain (e) a curing accelerator.
  • Component (e) Curing accelerator By containing the component (e) in the die bonding film, there is a tendency that adhesiveness and connection reliability can be more compatible.
  • the component (e) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts and the like. These may be used individually by 1 type or in combination of 2 or more type. Among these, the component (e) may be imidazoles and derivatives thereof from the viewpoint of reactivity.
  • imidazoles examples include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. These may be used individually by 1 type or in combination of 2 or more type.
  • the content of the component (e) may be 0.001 to 1% by mass based on the total amount of the die bonding film. When the content of the component (e) is in such a range, the adhesiveness and the connection reliability tend to be more compatible.
  • the die bonding film 10 may further contain a coupling agent, an antioxidant, a rheology control agent, a leveling agent, and the like as other components other than the components (a) to (e).
  • a coupling agent include ⁇ -ureidopropyltriethoxysilane, ⁇ -mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3- (2-aminoethyl) aminopropyltrimethoxysilane, and the like. ..
  • the content of other components may be 0.01 to 3% by mass based on the total amount of the die bonding film.
  • the die bonding film 10 shown in FIG. 1 is formed by forming an adhesive composition containing the above-mentioned component (a),, if necessary, the components (b) to (e) and other components in the form of a film. Can be made. Such a die bonding film 10 can be formed by applying an adhesive composition to the support film 20. The adhesive composition can be used as a solvent-diluted adhesive varnish. When an adhesive varnish is used, the die bonding film 10 can be formed by applying the adhesive varnish to the support film 20 and removing the solvent by heating and drying.
  • the solvent is not particularly limited as long as it can dissolve components other than component (a).
  • the solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene and p-simene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; tetrahydrofuran, 1,4-dioxane and the like.
  • Cyclic ethers such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, ⁇ -butyrolactone; Carbonated esters such as ethylene carbonate and propylene carbonate; amides such as N, N-dimethylformamide, N, N-dimethylacetamide and N-methyl-2-pyrrolidone can be mentioned. These may be used individually by 1 type or in combination of 2 or more type.
  • the solvent may be toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, or cyclohexanone from the viewpoint of solubility and boiling point.
  • the concentration of the solid component in the adhesive varnish may be 10 to 80% by mass based on the total mass of the adhesive varnish.
  • the adhesive varnish can be prepared by mixing and kneading the components (a) to (e), other components, and a solvent.
  • the order of mixing and kneading each component is not particularly limited and can be set as appropriate.
  • Mixing and kneading can be carried out by appropriately combining a disperser such as a normal stirrer, a raft machine, a triple roll, a ball mill, and a bead mill.
  • air bubbles in the varnish may be removed by vacuum degassing or the like.
  • the support film 20 is not particularly limited, and examples thereof include films such as polytetrafluoroethylene, polyethylene, polypropylene, polymethylpentene, polyethylene terephthalate, and polyimide.
  • the support film may be subjected to a mold release treatment.
  • the thickness of the support film 20 may be, for example, 10 to 200 ⁇ m or 20 to 170 ⁇ m.
  • a known method can be used as a method of applying the adhesive varnish to the support film 20.
  • a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, a curtain coating method and the like can be used.
  • the conditions for heat drying are not particularly limited as long as the solvent used is sufficiently volatilized, but may be, for example, 0.1 to 90 minutes at 50 to 200 ° C.
  • the thickness of the die bonding film 10 can be appropriately adjusted according to the intended use, and may be, for example, 3 to 200 ⁇ m. When the thickness of the die bonding film 10 is 3 ⁇ m or more, the adhesive strength tends to be sufficient, and when the thickness is 200 ⁇ m or less, the heat dissipation tends to be sufficient.
  • the thickness of the die bonding film 10 may be 5 to 100 ⁇ m or 10 to 75 ⁇ m from the viewpoint of adhesive strength and thinning of the semiconductor device.
  • the surface roughness of the first surface 10A is 1.0 ⁇ m or less
  • the surface roughness of the second surface 10B is 1.0 ⁇ m or less.
  • the first surface 10A and the second surface 10B can be arbitrarily determined, but in this specification, on the adhesive layer of the dicing tape, based on the contents of the dicing / die bonding integrated film described later.
  • the surface (that is, the surface opposite to the surface of the die bonding film 10 in contact with the support film 20) is the first surface 10A
  • the surface of the die bonding film 10 in contact with the support film 20 is the first surface.
  • the surface 10B of 2 will be described below.
  • the surface roughness means the arithmetic mean roughness Ra (JIS B 0601-2001), and the "arithmetic mean roughness Ra" can be measured by, for example, the method described in Examples. it can.
  • the measurement magnification may be 50 to 100 times.
  • the surface of the surface is usually independent of the components contained in the adhesive varnish.
  • the roughness tends to be 1.0 ⁇ m or less.
  • the first surface 10A is formed by a manufacturing method in which the adhesive varnish is applied to the support film 20 and the solvent is removed by heating and drying, the first surface 10A usually tends to be affected by the components contained in the adhesive varnish. is there.
  • the surface roughness of the surface of the first surface 10A is adjusted to 1.0 ⁇ m or less by using, for example, particles having an average particle size of 5.0 ⁇ m or less and / or component (a) of spherical particles. Can be done.
  • the surface roughness of the first surface 10A exceeds 1.0 ⁇ m, the surface roughness can be adjusted to 1.0 ⁇ m or less by, for example, performing a physical smoothing treatment.
  • the smoothing treatment can be performed, for example, by pressing the first surface 10A of the die bonding film 10 via a polyethylene film (PE film), a polyethylene terephthalate film (PET film), or the like.
  • the die bonding film 10 may be heated.
  • the pressing can be performed using, for example, a rubber roll, a metal roll, or the like.
  • the load at the time of pressing may be 0.01 to 3.0 MPa or 0.3 to 1.0 MPa. When the load at the time of pressing is 0.01 MPa or more, a sufficient smoothing effect tends to be obtained, and when the load at the time of pressing is 3.0 MPa or less, the load on the device is reduced and continuous processing is performed. Tends to be possible.
  • the heating temperature at the time of pressing may be room temperature (20 ° C.) to 200 ° C. or 50 ° C. to 140 ° C. When the heating temperature at the time of pressing is 200 ° C. or lower, it tends to be possible to suppress the progress of the curing reaction of the die bonding film 10.
  • the smoothing treatment can be performed under milder conditions by including the epoxy resin in which the component (a) is liquid at 25 ° C. in a predetermined range.
  • the surface roughness of the first surface 10A is preferably larger than the surface roughness of the second surface 10B.
  • the surface roughness of the first surface 10A is 1.0 ⁇ m or less, for example, 0.9 ⁇ m or less, 0.8 ⁇ m or less, or 0.75 ⁇ m or less from the viewpoint of preventing deterioration of adhesiveness due to the surface roughness. You can.
  • the surface roughness of the first surface 10A is 0.25 ⁇ m or more, 0.3 ⁇ m or more, 0.4 ⁇ m or more, 0.5 ⁇ m or more, from the viewpoint of preventing deterioration of the anchor effect due to the surface smoothness becoming too high. It may be 0.6 ⁇ m or more, or 0.65 ⁇ m or more.
  • the surface roughness of the second surface 10B may be, for example, 0.9 ⁇ m or less, 0.8 ⁇ m or less, 0.7 ⁇ m or less, 0.6 ⁇ m or less, or less than 0.65 ⁇ m. It may be 25 ⁇ m or more, 0.3 ⁇ m or more, 0.4 ⁇ m or more, or 0.45 ⁇ m or more.
  • the thermal conductivity (25 ° C.) of the die bonding film 10 may be 1.6 W / m ⁇ K or more.
  • the thermal conductivity of the die bonding film 10 may be 1.7 W / m ⁇ K or more, 2.0 W / m ⁇ K or more, or 2.3 W / m ⁇ K or more.
  • the upper limit of the thermal conductivity of the die bonding film 10 is not particularly limited, but may be 30 W / m ⁇ K or less.
  • "thermal conductivity" can be calculated by the method described in Example, for example.
  • FIG. 2 is a schematic cross-sectional view showing an embodiment of a dicing / die bonding integrated film.
  • the dicing / die bonding integrated film 100 shown in FIG. 2 includes a dicing tape 50 having a base material 40 and an adhesive layer 30 provided on the base material 40, and a first surface 10A and a first surface 10A. It has a second surface 10B on the opposite side, and is provided with a die bonding film 10 arranged on the adhesive layer 30 of the dicing tape 50 so that the adhesive layer 30 and the first surface 10A are in contact with each other.
  • the dicing / die bonding integrated film 100 may include a support film 20 on the second surface 10B of the dicing film 10.
  • Examples of the base material 40 in the dicing tape 50 include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. Further, the base material 40 may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment, if necessary.
  • the adhesive layer 30 may be made of a pressure-sensitive adhesive used in the field of dicing tape, and may be made of a pressure-sensitive pressure-sensitive adhesive or an ultraviolet-curable pressure-sensitive adhesive. .. When the adhesive layer 30 is made of an ultraviolet curable pressure-sensitive adhesive, the adhesive layer 30 may have a property that the adhesiveness is lowered by irradiation with ultraviolet rays.
  • the dicing / die bonding integrated film 100 can be produced by preparing the dicing tape 50 and the dicing film 10 and attaching the first surface 10A of the dicing film 10 to the adhesive layer 30 of the dicing tape 50. .. At this time, if the surface roughness of the first surface 10A exceeds 1.0 ⁇ m, the dicing / die bonding integrated film 100 may not be formed.
  • the die bonding film 10 contains 75% by mass or more of conductive particles based on the total amount of the die bonding film. Further, in the die bonding film 10, the surface roughness of the first surface 10A is 1.0 ⁇ m or less, and the surface roughness of the second surface 10B is 1.0 ⁇ m or less. According to such a dicing / die bonding integrated film, it has excellent heat dissipation, excellent adhesion between the adhesive layer made of the die bonding film and the adhesive layer, and when it is attached to a semiconductor wafer, it has excellent adhesion. The adhesion between the adhesive layer made of the die bonding film and the semiconductor wafer can be excellent.
  • the surface roughness of the first surface 10A and the second surface 10B measured by the dicing / die bonding film 10 tends to be maintained as they are. According to the tests of the present inventors, for example, irradiation of the dicing tape with ultraviolet rays does not substantially affect the surface roughness of the first surface 10A of the dicing film 10. Therefore, the first surface 10A and the second surface 10B of the dicing / die bonding film 10 are exposed from the dicing / die bonding integrated film 100, and the surface roughness of the exposed first surface and the second surface is measured. The surface roughness of the first surface and the second surface of the die bonding film 10 can be determined.
  • the dicing tape 50 and the support film 20 in the dicing / die bonding integrated film 100 are peeled off at room temperature (20 ° C.) to expose the first surface 10A and the second surface 10A and the second surface.
  • the surface 10B may be exposed, or if necessary, the first surface 10A and the second surface 10B may be exposed by laminating on a semiconductor wafer, a base material, or the like at about 40 to 80 ° C. You may.
  • FIG. 3 is a schematic cross-sectional view showing an embodiment of a method for manufacturing a semiconductor device.
  • 3 (a), (b), (c), (d), (e), and (f) are cross-sectional views schematically showing each step.
  • the method for manufacturing the semiconductor device is a step of attaching the second surface 10B of the die bonding film 10 (adhesive layer) of the dicing / die bonding integrated film 100 to the semiconductor wafer W (wafer laminating step, FIG. 3A). ), (B), the step of separating the semiconductor wafer W, the die bonding film 10 (adhesive layer), and the adhesive layer 30 (dicing step, see FIG.
  • a step of irradiating the adhesive layer 30 with ultraviolet rays (via the base material 40) (ultraviolet irradiation step, see FIG. 3D) and a semiconductor chip Wa on which the dicing film piece 10a is attached from the adhesive layer 30a.
  • a step of picking up the adhesive piece-attached semiconductor element 60) (pickup process, see FIG. 3E) and a step of adhering the adhesive piece-attached semiconductor element 60 to the support substrate 80 via the dicing film piece 10a (semiconductor element). It includes a bonding step, (see FIG. 3 (f))).
  • the dicing / die bonding integrated film 100 is placed in a predetermined device. Subsequently, the second surface 10B of the die bonding film 10 (adhesive layer) of the dicing / die bonding integrated film 100 is attached to the surface Ws of the semiconductor wafer W (see FIGS. 3A and 3B).
  • the circuit surface of the semiconductor wafer W is preferably provided on the surface opposite to the surface Ws.
  • the semiconductor wafer W and the die bonding film 10 are diced (see FIG. 3C). At this time, a part of the adhesive layer 30, or the whole of the adhesive layer 30 and a part of the base material 40 may be diced. As described above, the dicing / die bonding integrated film 100 also functions as a dicing sheet.
  • the adhesive layer 30 When the adhesive layer 30 is made of an ultraviolet curable adhesive, the adhesive layer 30 may be irradiated with ultraviolet rays (via the base material 40), if necessary (FIG. 3 (d)). reference). In the case of an ultraviolet curable adhesive, the adhesive layer 30 is cured, and the adhesive force between the adhesive layer 30 and the die bonding film 10 (adhesive layer) can be reduced. In ultraviolet irradiation, it is preferable to use ultraviolet rays having a wavelength of 200 to 400 nm. As for the ultraviolet irradiation conditions, it is preferable to adjust the illuminance and the irradiation amount to the range of 30 to 240 mW / cm 2 and the range of 50 to 500 mJ / cm 2 , respectively.
  • the semiconductor element 60 with an adhesive piece has a semiconductor chip Wa and a die bonding film piece 10a.
  • the semiconductor chip Wa is a semiconductor wafer W that is individualized by dicing
  • the die bonding film piece 10a is a die bonding film 10 that is individualized by dicing.
  • the adhesive layer 30a is obtained by dicing the adhesive layer 30 into pieces. The adhesive layer 30a may remain on the base material 40 when the semiconductor element 60 with the adhesive piece is picked up. In the pick-up step, it is not always necessary to expand the base material 40, but the pick-up property can be further improved by expanding the base material 40.
  • the amount of push-up by the needle 72 can be set as appropriate. Further, from the viewpoint of ensuring sufficient pick-up property even for ultra-thin wafers, for example, two-stage or three-stage push-up may be performed. Further, the semiconductor element 60 with the adhesive piece may be picked up by a method other than the method using the suction collet 74.
  • the semiconductor device manufacturing method includes, if necessary, a step of electrically connecting the semiconductor chip Wa and the support substrate 80 by a wire bond, and a semiconductor chip using a resin encapsulant on the surface 80A of the support substrate 80. It may further include a step of sealing the Wa with a resin.
  • FIG. 4 is a schematic cross-sectional view showing an embodiment of a semiconductor device.
  • the semiconductor device 200 shown in FIG. 4 can be manufactured by going through the above steps.
  • the semiconductor chip Wa and the support substrate 80 may be electrically connected by a wire bond 70.
  • the semiconductor chip Wa may be resin-sealed on the surface 80A of the support substrate 80 by using the resin encapsulant 92.
  • Solder balls 94 may be formed on the surface of the support substrate 80 opposite to the surface 80A for electrical connection with the external substrate (motherboard).
  • Elastomer HTR-860P-3 (trade name, manufactured by Nagase ChemteX Corporation, glycidyl group-containing acrylic rubber, weight average molecular weight: 1 million, Tg: -7 ° C.)
  • Curing accelerator Curesol 2PZ-CN (trade name, manufactured by Shikoku Chemicals Corporation, 1-cyanoethyl-2-phenylimidazole)
  • Adhesive varnish B was used to prepare the die bonding film.
  • the vacuum-defoamed adhesive varnish B was applied onto a support film, a polyethylene terephthalate (PET) film (thickness 38 ⁇ m) that had undergone a mold release treatment.
  • PET polyethylene terephthalate
  • the applied varnish was heat-dried at 90 ° C. for 5 minutes and then at 140 ° C. for 5 minutes in two steps to prepare a die bonding film having a thickness of 20 ⁇ m in a B stage state on the support film.
  • the surface of the produced die bonding film opposite to the support film is the first surface, and the surface of the die bonding film in contact with the support film is the second surface.
  • the first surface of the produced die bonding film is pressed through the PET film using a rubber roll under the conditions of a temperature of 140 ° C., a pressure of 0.5 MPa, and a speed of 0.1 m / min to smooth the surface. This was performed to obtain the die bonding film of Example 1.
  • the surface roughness of the surface of the die bonding film of Example 1 was measured.
  • the surface roughness (arithmetic mean roughness Ra (JIS B 0601-2001)) was determined by measuring at a magnification of 50 times using a shape measurement laser microscope VK-X100 (manufactured by KEYENCE CORPORATION).
  • the surface roughness of the surface (first surface) of the die bonding film opposite to the support film was measured as it was because the surface was exposed.
  • the surface roughness of the surface (second surface) of the die bonding film in contact with the support film was measured after the support film was peeled off to expose the surface. The results are shown in Table 2.
  • the laminate was subjected to a thermal history at 110 ° C. for 30 minutes and 175 ° C. for 180 minutes to obtain a measurement sample.
  • Thermal conductivity of the measurement sample was calculated by the following formula. The results are shown in Table 2.
  • Thermal conductivity (W / m ⁇ K) specific heat (J / kg ⁇ K) x thermal diffusivity (m 2 / s) x specific gravity (kg / m 3 )
  • the specific heat, thermal diffusivity, and specific gravity were measured by the following methods. Higher thermal conductivity means better heat dissipation.
  • Example 2 For the production of the die bonding film, the adhesive varnish C was used, and the surface was smoothed by pressing with a rubber roll under the conditions of a temperature of 60 ° C., a pressure of 0.5 MPa, and a speed of 0.1 m / min. Obtained the die bonding film of Example 2 in the same manner as in Example 1. For the die bonding film of Example 2, the surface roughness and thermal conductivity were measured in the same manner as in Example 1. The results are shown in Table 2. Further, in the same manner as in Example 1, a dicing / die bonding integrated film of Example 2 was obtained.
  • Example 3 An adhesive varnish D was used to prepare the die bonding film, and the die bonding film of Example 3 was obtained in the same manner as in Example 1 except that the smoothing treatment was not performed.
  • the surface roughness and thermal conductivity were measured in the same manner as in Example 1. The results are shown in Table 2. Further, in the same manner as in Example 1, a dicing / die bonding integrated film of Example 3 was obtained.
  • Example 4 An adhesive varnish E was used to prepare the die bonding film, and the die bonding film of Example 4 was obtained in the same manner as in Example 1 except that the smoothing treatment was not performed.
  • the surface roughness and thermal conductivity were measured in the same manner as in Example 1. The results are shown in Table 2. Further, in the same manner as in Example 1, a dicing / die bonding integrated film of Example 4 was obtained.
  • Comparative Example 1 A die bonding film of Comparative Example 1 was obtained in the same manner as in Example 1 except that the adhesive varnish A was used for producing the die bonding film and no smoothing treatment was performed.
  • the surface roughness and the thermal conductivity were measured in the same manner as in Example 1. The results are shown in Table 2. Further, in the same manner as in Example 1, a dicing / die bonding integrated film of Comparative Example 1 was obtained.
  • Comparative Example 2 A die bonding film of Comparative Example 2 was obtained in the same manner as in Example 1 except that the smoothing treatment was not performed.
  • the surface roughness and the thermal conductivity were measured in the same manner as in Example 1. The results are shown in Table 2. An attempt was made to produce a dicing / die bonding integrated film, but the adhesion between the first surface of the dicing film and the adhesive layer was not sufficient, and the same method as in Example 1 was used for dicing / die bonding. The body film could not be produced.
  • Comparative Example 3 The dicing / die bonding film of Comparative Example 2 was used for producing the dicing / die bonding integrated film of Comparative Example 3.
  • the first surface of the die bonding film was transferred to another support film (polyethylene terephthalate (PET) film (thickness 38 ⁇ m) subjected to a mold release treatment).
  • PET polyethylene terephthalate
  • the support film on the second surface side was peeled off, and the exposed second surface was attached to the adhesive layer of the dicing tape similar to Comparative Example 2 at 25 ° C., and the dicing / die bonding integrated film of Comparative Example 3 was attached.
  • the test piece is separated into pieces by dicing to a size of 2 mm ⁇ 2 mm, the test piece is observed, and the adhesion between the die bonding film piece (adhesive layer) and the adhesive layer and the die bonding film piece (adhesive layer)
  • the adhesion with the semiconductor wafer was evaluated.
  • Dicing was performed by a step-cut method using two blades, and dicing blades SD4000-BB and SD4000-DD were used. In the step cut method, dicing was performed to a position of 50 ⁇ m in the depth of the semiconductor wafer in the first cut, and then dicing was performed to a position of 20 ⁇ m in the base material of the dicing tape in the second cut.
  • the dicing conditions were a blade rotation speed of 4000 rpm and a cutting speed of 30 mm / sec. After dicing, the space between the die bonding film piece (adhesive layer) and the adhesive layer was observed, and the one without peeling was evaluated as "A” and the one with peeling was evaluated as "B". The space between the die bonding film piece (adhesive layer) and the semiconductor wafer was observed, and the one without peeling was evaluated as "A”, and the one with peeling was evaluated as "B”. The results are shown in Table 2.
  • Comparative Example 1 which did not satisfy the requirement of containing 75% by mass or more of conductive particles based on the total amount of the die bonding film was not sufficient.
  • Comparative Example 2 which does not satisfy the requirement that the surface roughness of the first surface is 1.0 ⁇ m or less, the dicing / die bonding integrated film cannot be produced, and the dicing film (adhesive layer) and the dicing tape are used. Adhesion with the adhesive layer was not sufficient.
  • Comparative Example 3 which does not satisfy the requirement that the surface roughness of the second surface is 1.0 ⁇ m or less, the adhesion between the die bonding film piece (adhesive layer) and the semiconductor wafer was not sufficient.
  • Example 1 As a method for reducing the surface roughness, as shown in Example 1, it has been found that physically smoothing treatment is effective. Further, as shown in Example 2, (b) by increasing the content of the liquid epoxy resin at 25 ° C. as the thermosetting resin (for example, 2% by mass or more based on the total amount of the die bonding film). , It was found that the conditions of the smoothing treatment can be made milder. Further, as shown in Examples 3 and 4, by using small conductive particles having a small average particle size and using spherical particles, the surface roughness on both sides of the die bonding film can be reduced without smoothing treatment. Turned out to be possible.
  • the dicing / die bonding integrated film provided with the adhesive layer and the adhesive layer according to one aspect of the present disclosure has excellent heat dissipation, excellent adhesion between the adhesive layer and the adhesive layer, and further. It was confirmed that the adhesive layer and the semiconductor wafer have excellent adhesion when attached to the semiconductor wafer.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)
  • Adhesive Tapes (AREA)

Abstract

Film intégré de découpage en dés/fixage de puce comprenant : une bande de découpage en dés comportant un substrat et une couche adhésive disposée sur le substrat ; et un film de fixage de puce doté d'une première surface et d'une seconde surface sur le côté opposé à la première surface, ledit film de fixage de puce étant disposé sur la couche adhésive de la bande de découpage en dés de telle sorte que la couche adhésive et la première surface sont en contact. Le film de fixage de puce contient 75 % en masse ou plus de particules conductrices par rapport à la quantité totale du film de fixage de puce. La rugosité de surface de la première surface est inférieure ou égale à 1,0 µm et la rugosité de surface de la seconde surface est inférieure ou égale à 1,0 µm dans le film de fixage de puce.
PCT/JP2020/025891 2019-07-05 2020-07-01 Film intégré de découpage en dés/fixage de puce, film de fixage de puce et procédé de production de dispositif à semi-conducteur WO2021006158A1 (fr)

Priority Applications (3)

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KR1020217042101A KR20220030218A (ko) 2019-07-05 2020-07-01 다이싱·다이본딩 일체형 필름, 다이본딩 필름, 및 반도체 장치의 제조 방법
JP2021530652A JPWO2021006158A1 (fr) 2019-07-05 2020-07-01
CN202080046101.6A CN114008760A (zh) 2019-07-05 2020-07-01 切割晶粒接合一体型膜、晶粒接合膜以及半导体装置的制造方法

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JPPCT/JP2019/026886 2019-07-05
PCT/JP2019/026886 WO2021005661A1 (fr) 2019-07-05 2019-07-05 Film de fixation de puce/découpage en dés intégré, film de fixation de puce et procédé de production de dispositif à semi-conducteur

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PCT/JP2020/025891 WO2021006158A1 (fr) 2019-07-05 2020-07-01 Film intégré de découpage en dés/fixage de puce, film de fixage de puce et procédé de production de dispositif à semi-conducteur

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010062205A (ja) * 2008-09-01 2010-03-18 Nitto Denko Corp ダイシング・ダイボンドフィルムの製造方法
JP2015103580A (ja) * 2013-11-21 2015-06-04 日東電工株式会社 熱硬化型ダイボンドフィルム、ダイシングシート付きダイボンドフィルム、熱硬化型ダイボンドフィルムの製造方法、及び、半導体装置の製造方法
JP2017095642A (ja) * 2015-11-27 2017-06-01 日東電工株式会社 接着シート、ダイシングテープ一体型接着シート、及び、半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4430085B2 (ja) 2007-03-01 2010-03-10 日東電工株式会社 ダイシング・ダイボンドフィルム
JP6396189B2 (ja) 2014-11-27 2018-09-26 日東電工株式会社 導電性フィルム状接着剤、フィルム状接着剤付きダイシングテープ及び半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010062205A (ja) * 2008-09-01 2010-03-18 Nitto Denko Corp ダイシング・ダイボンドフィルムの製造方法
JP2015103580A (ja) * 2013-11-21 2015-06-04 日東電工株式会社 熱硬化型ダイボンドフィルム、ダイシングシート付きダイボンドフィルム、熱硬化型ダイボンドフィルムの製造方法、及び、半導体装置の製造方法
JP2017095642A (ja) * 2015-11-27 2017-06-01 日東電工株式会社 接着シート、ダイシングテープ一体型接着シート、及び、半導体装置の製造方法

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WO2021005661A1 (fr) 2021-01-14
CN114008760A (zh) 2022-02-01
KR20220030218A (ko) 2022-03-10
TW202120641A (zh) 2021-06-01

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