CN114008760A - Dicing die-bonding integrated film, die-bonding film, and method for manufacturing semiconductor device - Google Patents

Dicing die-bonding integrated film, die-bonding film, and method for manufacturing semiconductor device Download PDF

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Publication number
CN114008760A
CN114008760A CN202080046101.6A CN202080046101A CN114008760A CN 114008760 A CN114008760 A CN 114008760A CN 202080046101 A CN202080046101 A CN 202080046101A CN 114008760 A CN114008760 A CN 114008760A
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Prior art keywords
film
die
bonding
die bond
surface roughness
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CN202080046101.6A
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Chinese (zh)
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小关裕太
中村祐树
山中大辅
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Resonac Holdings Corp
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Showa Denko KK
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B32B7/025—Electric or magnetic properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
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    • B32B2307/00—Properties of the layers or laminate
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    • B32B2307/202—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/30—Properties of the layers or laminate having particular thermal properties
    • B32B2307/302—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/50—Properties of the layers or laminate having particular mechanical properties
    • B32B2307/538—Roughness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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    • H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
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    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)

Abstract

The invention discloses a cutting crystal grain joint integrated film, which comprises: a dicing tape having a base material and a pressure-sensitive adhesive layer disposed on the base material; and a die-bonding film having a first surface and a second surface opposite to the first surface, and disposed on the pressure-sensitive adhesive layer of the dicing tape in such a manner that the pressure-sensitive adhesive layer is in contact with the first surface. The die bond film contains 75 mass% or more of conductive particles based on the total amount of the die bond film. The surface roughness of the first surface on the die bond film is 1.0 [ mu ] m or less, and the surface roughness of the second surface is 1.0 [ mu ] m or less.

Description

Dicing die-bonding integrated film, die-bonding film, and method for manufacturing semiconductor device
Technical Field
The present invention relates to a dicing/die-bonding (dicing/die-bonding) integrated film, a die-bonding film, and a method for manufacturing a semiconductor device.
Background
Conventionally, a semiconductor device is manufactured through the following steps. First, a semiconductor wafer is attached to a pressure-sensitive adhesive sheet (dicing sheet) for dicing, and the semiconductor wafer is singulated into semiconductor chips in this state (dicing step). Thereafter, a pickup step, a pressure bonding step, a die bonding step, and the like are performed. Patent document 1 discloses a tacky adhesive sheet (tab ky adhesive sheet) (dicing die-bonding integral film) having the following functions: a function of fixing the semiconductor wafer in the dicing step and a function of bonding the semiconductor chip and the substrate in the die bonding step. In the dicing step, the semiconductor wafer and the adhesive (adhesive) layer are singulated to obtain a chip with an adhesive sheet.
In recent years, a device called a power semiconductor device that controls electric power or the like has become widespread. The power semiconductor device is likely to generate heat due to the supplied current, and thus is required to have excellent heat dissipation properties. Patent document 2 discloses an electrically conductive film-like adhesive having a higher heat dissipation property after curing than before curing, and a dicing tape with the film-like adhesive.
Prior art documents
Patent document
Patent document 1: japanese patent laid-open No. 2008-218571
Patent document 2: japanese patent No. 6396189
Disclosure of Invention
Technical problem to be solved by the invention
The present inventors have found that, in the process of developing a semiconductor device having excellent heat dissipation properties, when conductive particles are blended in an amount (for example, 75 mass% or more based on the total amount of the die bonding film) that can obtain sufficient heat dissipation properties in an adhesive layer of a dicing die-bonding integral film having the adhesive layer formed of the die bonding film and the pressure-sensitive adhesive layer, the adhesion between the adhesive layer and the pressure-sensitive adhesive layer tends to be insufficient. If the adhesion between the pressure-sensitive adhesive layer and the dicing die-bonding integral film is insufficient, a problem may occur in that the dicing die-bonding integral film cannot be formed, and even if the dicing die-bonding integral film is formed, a problem may occur in that the adhesive-attached wafer is detached from the pressure-sensitive adhesive layer in the dicing step (wafer flying). Further, the inventors of the present invention have further studied and found that when an adhesive layer of a dicing die-bonding integral film is attached to a semiconductor wafer, adhesion between the adhesive layer and the semiconductor wafer tends to be insufficient. If the adhesion between the both is insufficient, a problem may occur in that the dicing die-bonding integral film is detached from the semiconductor wafer in the dicing step.
Accordingly, an object of an aspect of the present invention is to provide a dicing die-bonding integral film having excellent heat dissipation properties and excellent adhesion between an adhesive layer and a pressure-sensitive adhesive layer, and even in the case of being attached to a semiconductor wafer, excellent adhesion between the adhesive layer and the semiconductor wafer.
Means for solving the technical problem
One aspect of the invention relates to a cut die-bonded monolithic film. Cutting the die-bond integrated film includes: a dicing tape having a base material and a pressure-sensitive adhesive layer disposed on the base material; and a die-bonding film having a first surface and a second surface opposite to the first surface, the die-bonding film being disposed on the pressure-sensitive adhesive layer of the dicing tape in such a manner that the pressure-sensitive adhesive layer is in contact with the first surface. The die bond film contains 75 mass% or more of conductive particles based on the total amount of the die bond film. The surface roughness of the first surface on the die bond film is 1.0 [ mu ] m or less, and the surface roughness of the second surface is 1.0 [ mu ] m or less. The dicing die-bonding integral film has excellent heat dissipation properties, and the adhesive layer formed of the die-bonding film has excellent adhesion to the pressure-sensitive adhesive layer, and further, even when the dicing die-bonding integral film is attached to a semiconductor wafer, the adhesive layer formed of the die-bonding film has excellent adhesion to the semiconductor wafer.
The surface roughness of the first surface is preferably greater than the surface roughness of the second surface. When the surface roughness of the first surface is larger than the surface roughness of the second surface, the adhesion between the die bond film and the pressure-sensitive adhesive layer (dicing tape) at the time of dicing is more excellent, and the wafer is likely to be suppressed from flying off or the like.
The surface roughness of the first surface may be 0.25 μm or more. That is, the surface roughness of the first surface may be 0.25 μm to 1.0 μm. When the surface roughness of the first surface is 1.0 μm or less, the adhesiveness tends to be prevented from being lowered by the surface roughness. On the other hand, if the surface roughness of the first surface is 0.25 μm or more, the leveling effect tends to be prevented from being lowered due to excessively high surface smoothness. The dicing die-bonding integral film having the die-bonding film with the surface roughness of the first surface within these ranges can more improve the adhesion between the adhesive layer formed of the die-bonding film and the pressure-sensitive adhesive layer.
The thermal conductivity of the die bond film may be 1.6W/mK or more. When the thermal conductivity of the die-bonding film is 1.6W/mK or more, the die-bonding integral film tends to have more excellent heat dissipation properties.
The conductive particles may be spherical. Further, the average particle diameter of the conductive particles may be 5.0 μm or less or 3.0 μm or less. By using such conductive particles, a grain bonding film having a predetermined surface roughness tends to be easily obtained without performing physical smoothing treatment.
The conductive particles may have a thermal conductivity (20 ℃) of 250W/m.K or more. By using such conductive particles, a dicing die-bonding integrated film having more excellent heat dissipation properties is obtained.
The die-bonding film may further contain a thermosetting resin, a curing agent, and an elastomer. The grain-bonding film containing these tends to easily adjust the surface roughness to a predetermined range.
The thermosetting resin may comprise an epoxy resin that is liquid at 25 ℃. When the thermosetting resin contains an epoxy resin that is liquid at 25 ℃, the content of the epoxy resin may be 2% by mass or more based on the total amount of the die bond film. By including the epoxy resin which is liquid at 25 ℃ in the thermosetting resin in a predetermined range, a crystal grain bonding film having a predetermined surface roughness tends to be easily obtained. Further, even when the physical smoothing processing is performed, the processing tends to be performed under milder conditions.
An aspect of the present invention provides a method of manufacturing a semiconductor device, including: attaching the second surface of the die bond film of the cut die bond integrated film to a semiconductor wafer; a step of singulating the semiconductor wafer and the die bonding film; picking up the semiconductor wafer with the die bonding film attached thereto from the dicing tape; and a step of bonding the semiconductor chip to the support substrate via the die bonding film. By using the dicing die-bonding integral film, a semiconductor device having excellent heat dissipation can be manufactured.
One aspect of the invention relates to a die bond film. The die bond film has a first surface and a second surface opposite to the first surface, and contains 75 mass% or more of conductive particles based on the total amount of the die bond film. The surface roughness of the first surface on the die bond film is 1.0 [ mu ] m or less, and the surface roughness of the second surface is 1.0 [ mu ] m or less. The surface roughness of the first surface is preferably greater than the surface roughness of the second surface. The surface roughness of the first surface may be 0.25 μm or more.
The thermal conductivity of the die bond film may be 1.6W/mK or more.
The conductive particles may be spherical. Further, the average particle diameter of the conductive particles may be 5.0 μm or less or 3.0 μm or less. The conductive particles may have a thermal conductivity (20 ℃) of 250W/m.K or more.
The die-bonding film may further contain a thermosetting resin, a curing agent, and an elastomer. The thermosetting resin may comprise an epoxy resin that is liquid at 25 ℃. When the thermosetting resin contains an epoxy resin that is liquid at 25 ℃, the content of the epoxy resin may be 2% by mass or more based on the total amount of the die bond film.
Effects of the invention
According to the present invention, there is provided a dicing die-bonding integral film which has excellent heat dissipation properties and excellent adhesion between an adhesive layer and a pressure-sensitive adhesive layer, and which is excellent in adhesion between the adhesive layer and a semiconductor wafer even when attached to the semiconductor wafer. Further, the present invention provides a method for manufacturing a semiconductor device using such a dicing die-bonding integrated film. Further, according to the present invention, there is provided a die-bonding film suitable for such a cut die-bonding integral type film.
Drawings
Fig. 1 is a schematic cross-sectional view showing one embodiment of a die bond film.
Fig. 2 is a schematic cross-sectional view showing an embodiment of cutting a die-bonding integral film.
Fig. 3 is a schematic cross-sectional view showing an embodiment of a method for manufacturing a semiconductor device. In fig. 3, fig. 3(a), fig. 3(b), fig. 3(c), fig. 3(d), fig. 3(e), and fig. 3(f) are cross-sectional views schematically showing the respective steps.
Fig. 4 is a schematic cross-sectional view showing one embodiment of a semiconductor device.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. The present invention is not limited to the following embodiments. In the following embodiments, the constituent elements (including steps) are not essential unless otherwise specified. The sizes of the constituent elements in the drawings are conceptual sizes, and the relative relationship between the sizes of the constituent elements is not limited to the relationship shown in the drawings.
The same applies to numerical values and ranges thereof in the present specification, and the present invention is not limited thereto. In the present specification, the numerical range represented by the term "to" represents a range including numerical values described before and after the term "to" as the minimum value and the maximum value, respectively. In the numerical ranges recited in the present specification, the upper limit or the lower limit recited in one numerical range may be replaced with the upper limit or the lower limit recited in another numerical range. In addition, in the numerical ranges described in the present specification, the upper limit value or the lower limit value of the numerical range may be replaced with the values shown in the examples.
In the present specification, (meth) acrylate means acrylate or methacrylate corresponding thereto. The same applies to other similar expressions such as (meth) acryloyl group and (meth) acrylic acid copolymer.
[ die bond film ]
Fig. 1 is a schematic cross-sectional view showing one embodiment of a die bond film. The die bond film 10 shown in fig. 1 has a first surface 10A and a second surface 10B opposite to the first surface 10A. As described later, the first surface 10A may be a surface disposed on the pressure-sensitive adhesive layer of the dicing tape. As shown in fig. 1, the die bond film 10 may be disposed on a support film 20. The die bond film 10 is thermosetting, and can be completely cured (stage C) after being cured by being in a semi-cured (stage B) state.
The die bond film 10 contains (a) conductive particles, and if necessary, (b) a thermosetting resin, (c) a curing agent, and (d) an elastomer.
(a) The components: conductive particles
(a) The component is used for improving the heat dissipation of the die bond film. Examples of the component (a) include metal particles such as nickel particles, copper particles, silver particles, and aluminum particles; carbon particles such as carbon black particles; fibrous carbon particles such as carbon nanotubes; particles in which the surface of core particles such as metal particles and resin particles is coated with a layer made of a conductive material, and the like. These may be used alone or in combination of two or more. Among these, the component (a) may be a metal particle or a metal-coated metal particle in which the surface of the metal particle is coated with a metal layer.
(a) One mode of the component (B) may be such that the conductivity (0 ℃ C.) is 40X 106Metal particles composed of a metal having an S/m or more. The metal particles may be metal particles composed of one kind of metal particles, or metal-coated metal particles composed of two or more kinds of metals. By using such metal particles, the heat dissipation of the die bond film can be further improved. The conductivity (0 ℃ C.) was 40X 106Examples of the metal having an S/m or more include gold (49X 10)6S/m), silver (67X 10)6S/m), copper (65X 10)6S/m), and the like. The conductivity (0 ℃ C.) may be 45X 106S/m or more or 50X 106And S/m is more than or equal to. That is, the metal particles are preferably made of silver and/or copper.
(a) The component (B) may have a conductivity (0 ℃ C.) of 40X 10645 x10 of S/m or more6S/m or more or 50X 106Conductive particles having S/m or more.
(a) One mode of the component (A) is metal particles made of a metal having a thermal conductivity (20 ℃) of 250W/mK or more. The metal particles may be metal particles composed of one kind of metal particles, or metal-coated metal particles composed of two or more kinds of metals. By using such metal particles, the heat dissipation of the die bond film can be further improved. Examples of the metal having a thermal conductivity (20 ℃) of 250W/mK or more include gold (295W/mK), silver (418W/mK), and copper (372W/mK). The thermal conductivity (20 ℃) may be 300W/mK or more or 350W/mK or more. That is, the metal particles are preferably made of silver and/or copper.
(a) The component (B) may be conductive particles having a thermal conductivity (20 ℃) of 250W/mK or more, 300W/mK or more, or 350W/mK or more.
Among these, since the component (a) is excellent in electric conductivity and thermal conductivity and is difficult to oxidize, it may be a metal particle having silver on the surface, more specifically, a silver particle or a silver-coated copper particle (silver-plated copper powder) in which the surface of the copper particle is coated with silver. The silver particles and the silver-coated copper particles (silver-plated copper powder) may have a conductivity (0 ℃) of 50X 106S/m or more, and the thermal conductivity (20 ℃) may be 350W/mK or more。
(a) The shape of the component (a) is preferably spherical, although the shape is not particularly limited, and may be, for example, a sheet or a sphere. When the component (a) has a spherical shape, a crystal grain bonding film having a predetermined surface roughness tends to be easily obtained without performing a physical smoothing treatment.
(a) The average particle diameter of the component (A) may be 0.01 to 10 μm. When the average particle diameter of the component (a) is 0.01 μm or more, an increase in viscosity in the production of the adhesive varnish is prevented, the component (a) can be contained in a desired amount in the die-bonding film, and the wettability of the die-bonding film to an adherend can be secured to exhibit more favorable adhesion. When the average particle diameter of the component (a) is 10 μm or less, the film formability is more excellent, and the heat dissipation property tends to be further improved by adding the conductive particles. In addition, when the thickness of the die bond film is within this range, the thickness of the die bond film can be reduced, the semiconductor wafer can be highly laminated, and the wafer can be prevented from being cracked due to the conductive particles coming out of the die bond film. (a) The average particle diameter of the component (A) may be 0.1 μm or more, 0.5 μm or more, 1.0 μm or more, or 1.5 μm or more, or may be 8.0 μm or less, 7.0 μm or less, 6.0 μm or less, 5.0 μm or less, 4.0 μm or less, or 3.0 μm or less. When the average particle size of the component (a) is 5.0 μm or less, a crystal grain bonding film having a predetermined surface roughness tends to be easily obtained without performing physical smoothing treatment. The average particle diameter of the component (a) is a particle diameter (D) at a volume ratio (volume fraction) of 50% to the total volume of the component (a)50). (a) Average particle diameter (D) of component (A)50) This can be determined by the following method: a suspension obtained by suspending the component (a) in water is measured by a laser light scattering method using a laser scattering particle size measuring apparatus (for example, macchian (Microtrac)).
(a) The component (B) is preferably spherical particles, and the average particle diameter thereof is 5.0 μm or less.
(a) The content of the component is 75 mass% or more based on the total amount of the grain-bonding film. If the content of the component (a) is 75 mass% or more based on the total amount of the die bond film, the thermal conductivity of the die bond film can be improved, and as a result, the heat dissipation can be improved. (a) The content of the component (c) may be 77 mass% or more, 80 mass% or more, 83 mass% or more, or 85 mass% or more based on the total amount of the grain-bonding film. (a) The upper limit of the content of the component is not particularly limited, but may be 95 mass% or less, 92 mass% or less, or 90 mass% or less based on the total amount of the grain-bonding film.
(a) The content of the component (a) may be 300 parts by mass or more, 400 parts by mass or more, 500 parts by mass or more, or 550 parts by mass or more, based on 100 parts by mass of the total amount of the components other than the component (a) of the die bond film. If the content of the component (a) is 300 parts by mass or more with respect to 100 parts by mass of the total amount of the components other than the component (a) of the die bond film, the thermal conductivity of the die bond film can be improved, and as a result, the heat dissipation can be improved. (a) The upper limit of the content of the component is not particularly limited, but may be 1900 parts by mass or less, 1200 parts by mass or less, 1000 parts by mass or less, or 900 parts by mass or less with respect to 100 parts by mass of the total amount of the components other than the component (a) of the die bond film.
(b) The components: thermosetting resin
(b) The component is a component having a property of forming three-dimensional bonding between molecules by heating or the like to be cured, and shows an adhesive effect after being cured. (b) The component may be an epoxy resin. (b) The component (C) may contain an epoxy resin which is liquid at 25 ℃. The epoxy resin can be used without particular limitation as long as it has an epoxy group in the molecule. The epoxy resin may have two or more epoxy groups in a molecule.
Examples of the epoxy resin include bisphenol a type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, bisphenol a novolac type epoxy resins, bisphenol F novolac type epoxy resins, stilbene type epoxy resins, epoxy resins having a triazine skeleton, epoxy resins having a fluorene skeleton, triphenol methane type epoxy resins, biphenyl type epoxy resins, xylylene type epoxy resins, biphenyl aralkyl type epoxy resins, naphthalene type epoxy resins, dicyclopentadiene type epoxy resins, polyfunctional phenols, and diglycidyl ether compounds of polycyclic aromatic compounds such as anthracene. These may be used alone or in combination of two or more. Among these, the epoxy resin may be a bisphenol type epoxy resin or a cresol novolac type epoxy resin from the viewpoint of the heat resistance of the cured product and the like.
(b) The component (C) may contain an epoxy resin which is liquid at 25 ℃. (b) When the component (c) contains such an epoxy resin, a crystal grain bonding film having a predetermined surface roughness tends to be easily obtained. Further, even when the physical smoothing processing is performed, the processing tends to be performed under milder conditions. Examples of commercially available epoxy resins that are liquid at 25 ℃ include EXA-830CRP (trade name, manufactured by DIC Corporation), YDF-8170C (trade name, manufactured by Nippon iron chemical Co., Ltd.), and the like.
The epoxy equivalent of the epoxy resin is not particularly limited, and may be 90 to 300g/eq, 110 to 290g/eq, or 110 to 290 g/eq. When the epoxy equivalent of the component (a) is within this range, the fluidity of the adhesive composition at the time of forming the die bond film tends to be easily ensured while the bulk strength (bulk strength) of the die bond film is maintained.
(b) The content of the component (c) may be 0.1 mass% or more, 1 mass% or more, 2 mass% or more, or 3 mass% or more, and may be 15 mass% or less, 12 mass% or less, 10 mass% or less, or 8 mass% or less, based on the total amount of the grain-bonded film.
When the component (b) contains an epoxy resin that is liquid at 25 ℃, the mass ratio of the epoxy resin to the component (b) (mass of the epoxy resin/(total mass of the component (b)) may be 10% to 100%, 40% to 100%, 60% to 100%, or 80% to 100% in percentage. When the component (b) contains an epoxy resin which is liquid at 25 ℃, the content of the epoxy resin may be 1 mass% or more, 2 mass% or more, 3 mass% or more, or 4 mass% or more based on the total amount of the die bond film. The content of the epoxy resin may be 15 mass% or less, 12 mass% or less, 10 mass% or less, or 8 mass% or less.
(c) The components: curing agent
(c) The component (b) may be a phenolic resin capable of acting as a curing agent for the epoxy resin. The phenolic resin can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule. Examples of the phenol resin include a novolak-type phenol resin obtained by condensing or co-condensing phenols such as phenol, cresol, resorcinol (resorcin), catechol (catechol), bisphenol a, bisphenol F, phenylphenol, and aminophenol and/or naphthols such as α -naphthol, β -naphthol, and dihydroxynaphthalene with a compound having an aldehyde group such as formaldehyde under an acidic catalyst, a phenol aralkyl resin synthesized from allylated bisphenol a, allylated bisphenol F, allylated naphthalenediol, phenol novolak, phenols such as phenol and/or naphthols and dimethoxyp-xylene or bis (methoxymethyl) biphenyl, a naphthol aralkyl resin, a biphenyl aralkyl-type phenol resin, and a phenyl aralkyl-type phenol resin. These may be used alone or in combination of two or more.
The hydroxyl equivalent of the phenolic resin can be 40 g/eq-300 g/eq, 70 g/eq-290 g/eq or 100g/e q-280 g/eq. When the hydroxyl equivalent weight of the phenolic resin is 40g/eq or more, the storage modulus of the film tends to be further improved, and when it is 300g/eq or less, problems due to foaming, gas bleeding, and the like can be prevented.
From the viewpoint of curability, the ratio of the epoxy equivalent of the epoxy resin as the component (b) to the hydroxyl equivalent of the phenolic resin as the component (c) (epoxy equivalent of the epoxy resin as the component (b)/hydroxyl equivalent of the phenolic resin as the component (c)) may be 0.30/0.70 to 0.70/0.30, 0.35/0.65 to 0.65/0.35, 0.40/0.60 to 0.60/0.40, or 0.45/0.55 to 0.55/0.45. When the equivalent ratio is 0.30/0.70 or more, more sufficient curability tends to be obtained. If the equivalent ratio is 0.70/0.30 or less, the viscosity can be prevented from becoming too high, and more sufficient fluidity can be obtained.
(c) The content of the component (c) may be 0.1 mass% or more, 1 mass% or more, 2 mass% or more, or 3 mass% or more, and may be 15 mass% or less, 12 mass% or less, 10 mass% or less, or 8 mass% or less, based on the total amount of the grain-bonded film.
(d) The components: elastic body
Examples of the component (d) include polyimide resins, acrylic resins, polyurethane resins, polyphenylene ether resins, polyetherimide resins, phenoxy resins, modified polyphenylene ether resins, and the like. (d) The component (C) may be a resin having a crosslinkable functional group among these resins, or may be an acrylic resin having a crosslinkable functional group. Here, the acrylic resin refers to a polymer containing a structural unit derived from a (meth) acrylate ester. The acrylic resin may be a polymer containing, as a structural unit, a structural unit derived from a (meth) acrylate having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group. The acrylic resin may be an acrylic rubber such as a copolymer of (meth) acrylate and acrylonitrile. These may be used alone or in combination of two or more.
Examples of commercially available acrylic resins include SG-70L, SG-708-6, WS-023EK30, SG-280EK23, HTR-860P-3CSP-3DB (all manufactured by Nagase ChemteX, Inc.), and the like.
(d) The glass transition temperature (Tg) of the component may be from-50 ℃ to 50 ℃ or from-30 ℃ to 20 ℃. When the Tg of the acrylic resin is-50 ℃ or higher, the workability tends to be further improved due to the decrease in the viscosity of the die bond film. When the Tg of the acrylic resin is 50 ℃ or lower, the fluidity of the adhesive composition at the time of forming the die bond film tends to be more sufficiently ensured. The glass transition temperature (Tg) of the component (d) is a value measured by using a DSC (differential scanning calorimeter) (for example, a product name: Thermo Plus 2 manufactured by Rigaku corporation).
(d) The weight average molecular weight (Mw) of the component (B) may be 5 to 120 ten thousand, 10 to 120 ten thousand or 30 to 90 ten thousand. When the weight average molecular weight of the component (d) is 5 ten thousand or more, the film-forming property tends to be more excellent. If the weight average molecular weight of the component (d) is 120 ten thousand or less, the adhesive composition tends to have more excellent fluidity when forming a die bond film. The weight average molecular weight (Mw) is measured by Gel Permeation Chromatography (GPC) and is converted from a calibration curve of standard polystyrene.
(d) The measurement apparatus and measurement conditions for the weight average molecular weight (Mw) of the component are shown below, for example.
A pump: l-6000 (manufactured by Hitachi Kagaku Co., Ltd.)
Pipe column: the coupled columns were prepared by coupling Gelpack GL-R440 (manufactured by Hitachi chemical Co., Ltd.), Gelpack GL-R450 (manufactured by Hitachi chemical Co., Ltd.), and Gelpack GL-R400M (manufactured by Hitachi chemical Co., Ltd.) (each 10.7Mm (diameter) × 300Mm)
Eluent: tetrahydrofuran (hereinafter, referred to as "THF")
Sample preparation: a solution prepared by dissolving 120mg of a sample in 5mL of THF
Flow rate: 1.75 ML/min
(d) The content of the component (c) may be 0.1 mass% or more, 0.5 mass% or more, 1 mass% or more, or 2 mass% or more, or may be 10 mass% or less, 8 mass% or less, 6 mass% or less, or 5 mass% or less, based on the total amount of the grain-bonded film.
The die-bonding film 10 may further contain (e) a curing accelerator.
(e) The components: curing accelerator
By containing the component (e) in the die bond film, the die bond film tends to have both adhesiveness and connection reliability. Examples of the component (e) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, and the like. These may be used alone or in combination of two or more. Among these, the component (e) may be an imidazole and a derivative thereof from the viewpoint of reactivity.
Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole. These may be used alone or in combination of two or more.
(e) The content of the component (b) may be 0.001 to 1% by mass based on the total amount of the grain-bonding film. When the content of the component (e) is within this range, the adhesion and the connection reliability tend to be more compatible.
The die bond film 10 may further contain other components other than the components (a) to (e), such as a coupling agent, an antioxidant, a rheology control agent, and a leveling agent. Examples of the coupling agent include gamma-ureidopropyltriethoxysilane, gamma-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3- (2-aminoethyl) aminopropyltrimethoxysilane. The content of the other component may be 0.01 to 3% by mass based on the total amount of the grain-bonding film.
The die bond film 10 shown in fig. 1 can be produced by forming an adhesive composition containing the above-mentioned component (a) and, if necessary, components (b) to (e) and other components into a film. Such a grain-bonding film 10 can be formed by applying an adhesive composition to the support film 20. The adhesive composition can be used as an adhesive varnish diluted with a solvent. In the case of using the adhesive varnish, the die bond film 10 can be formed by applying the adhesive varnish to the support film 20, and heating, drying, and removing the solvent.
The solvent is not particularly limited as long as it can dissolve components other than the component (a). Examples of the solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene (cumene), and p-isopropyltoluene (p-cy-mene); aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; cyclic ethers such as tetrahydrofuran and 1, 4-dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, γ -butyrolactone, and the like; carbonates such as ethylene carbonate and propylene carbonate; amides such as N, N-dimethylformamide, N-dimethylacetamide and N-methyl-2-pyrrolidone. These may be used alone or in combination of two or more. Among these, the solvent may be toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, or cyclohexanone from the viewpoint of solubility and boiling point. The solid content concentration in the binder varnish may be 10 to 80% by mass based on the total mass of the binder varnish.
The adhesive varnish can be prepared by mixing and kneading the components (a) to (e), other components, and a solvent. The order of mixing and kneading the components is not particularly limited and can be set as appropriate. The mixing and kneading can be carried out by appropriately combining a usual dispersing machine such as a mixer, a kneader, a three-roll, a ball mill, or a bead mill. After the binder varnish is prepared, air bubbles in the varnish may be removed by vacuum degassing or the like.
The support film 20 is not particularly limited, and examples thereof include films of polytetrafluoroethylene, polyethylene, polypropylene, polymethylpentene, polyethylene terephthalate, polyimide, and the like. The support film may be subjected to a mold release treatment. The thickness of the support film 20 may be, for example, 10 μm to 200 μm or 20 μm to 170 μm.
As a method of applying the adhesive varnish to the support film 20, a known method can be used, and examples thereof include a blade coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, a curtain coating method, and the like. The conditions for the heat drying are not particularly limited as long as the solvent used is sufficiently volatilized, and may be, for example, 0.1 to 90 minutes at 50 to 200 ℃.
The thickness of the die bond film 10 may be appropriately adjusted depending on the application, and may be, for example, 3 μm to 200 μm. When the thickness of the die bond film 10 is 3 μm or more, the bonding force tends to be sufficient, and when it is 200 μm or less, the heat dissipation tends to be sufficient. The thickness of the die bond film 10 may be 5 μm to 100 μm or 10 μm to 75 μm from the viewpoint of adhesion and thinning of the semiconductor device.
In the die bond film 10, the surface roughness of the first surface 10A is 1.0 μm or less, and the surface roughness of the second surface 10B is 1.0 μm or less. Here, although the first surface 10A and the second surface 10B can be arbitrarily determined, in consideration of the content of the dicing die-bonding integral film described later, in the present specification, a surface disposed on the pressure-sensitive adhesive layer of the dicing tape (that is, a surface of the die-bonding film 10 that is opposite to the surface in contact with the support film 20) is described as the first surface 10A, and a surface of the die-bonding film 10 that is in contact with the support film 20 is described as the second surface 10B. In the present specification, the surface roughness means the arithmetic average roughness Ra (JIS B0601-. The measurement magnification may be 50 to 100 times.
In the case where the second surface 10B is formed by a manufacturing method in which the adhesive varnish is applied to the support film 20 and the solvent is removed by heating and drying, the surface roughness of the surface tends to be 1.0 μm or less, regardless of the components contained in the adhesive varnish. On the other hand, when the first surface 10A is formed by a manufacturing method in which the adhesive varnish is applied to the support film 20 and the solvent is removed by heating and drying, the influence of the components contained in the adhesive varnish tends to be exerted in general. The first surface 10A can be adjusted to have a surface roughness of 1.0 μm or less by using particles having an average particle diameter of 5.0 μm or less and/or the component (a) of spherical particles, for example. When the surface roughness of the first surface 10A exceeds 1.0 μm, the surface roughness can be adjusted to 1.0 μm or less by performing physical smoothing processing, for example.
The smoothing treatment can be performed by pressing the first surface 10A of the die bond film 10 through a polyethylene film (PE film), a polyethylene terephthalate film (PET film), or the like, for example. In this case, the die bond film 10 may be pressed while being heated. The pressing can be performed using, for example, a rubber roller, a metal roller, or the like. The load during pressing may be 0.01MPa to 3.0MPa or 0.3MPa to 1.0 MPa. When the load during pressing is 0.01MPa or more, a sufficient smoothing effect tends to be obtained, and when the load during pressing is 3.0MPa or less, the load on the apparatus tends to be reduced, and continuous processing tends to be possible. The heating temperature during pressing may be room temperature (20 ℃) to 200 ℃ or 50 ℃ to 140 ℃. When the heating temperature during pressing is 200 ℃ or lower, the progress of the curing reaction of the die bond film 10 tends to be suppressed. Further, by containing the epoxy resin which is liquid at 25 ℃ in the component (a) within a predetermined range, the smoothing treatment can be performed under milder conditions.
The surface roughness of the first surface 10A is preferably greater than the surface roughness of the second surface 10B. By applying such a die bond film 10 to a dicing die-bonding integrated film, adhesion between the die bond film and the pressure-sensitive adhesive layer (dicing tape) at the time of dicing is more excellent, and the tendency is that the die flying off and the like can be suppressed.
The surface roughness of the first surface 10A is 1.0 μm or less, for example, 0.9 μm or less, 0.8 μm or less, or 0.75 μm or less, from the viewpoint of preventing the adhesion from being lowered due to the surface roughness. The surface roughness of the first surface 10A may be 0.25 μm or more, 0.3 μm or more, 0.4 μm or more, 0.5 μm or more, 0.6 μm or more, or 0.65 μm or more, from the viewpoint of preventing the reduction of the leveling effect due to excessively high surface smoothness. From the same viewpoint, the surface roughness of the second surface 10B may be, for example, 0.9 μm or less, 0.8 μm or less, 0.7 μm or less, 0.6 μm or less, or less than 0.65 μm, or may be 0.25 μm or more, 0.3 μm or more, 0.4 μm or more, or 0.45 μm or more.
The thermal conductivity (25 ℃) of the die bond film 10 may be 1.6W/mK or more. When the thermal conductivity of the die-bond film 10 is 1.6W/mK or more, the dicing die-bond integrated film tends to have more excellent heat dissipation properties. The thermal conductivity of the die bond film may be 1.7W/mK or more, 2.0W/mK or more, or 2.3W/mK or more. The upper limit of the thermal conductivity of the die bond film 10 is not particularly limited, and may be 30W/m · K or less. In the present specification, the "thermal conductivity" can be calculated by the method described in the examples, for example.
[ dicing die-bonding integral film ]
Fig. 2 is a schematic cross-sectional view showing an embodiment of cutting a die-bonding integral film. The cut die bond integral film 100 shown in fig. 2 includes: a dicing tape 50 having a base material 40 and a pressure-sensitive adhesive layer 30 disposed on the base material 40; and a die-bonding film 10 having a first surface 10A and a second surface 10B opposite to the first surface 10A, and disposed on the pressure-sensitive adhesive layer 30 of the dicing tape 50 so that the pressure-sensitive adhesive layer 30 is in contact with the first surface 10A. The dicing die-bonding integral film 100 may also include a support film 20 on the second surface 10B of the die-bonding film 10.
Examples of the base material 40 in the dicing tape 50 include plastic films such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film. The base material 40 may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment as needed.
The pressure-sensitive adhesive layer 30 may be formed of a pressure-sensitive adhesive (pressure-sensitive adhesive) used in the field of dicing tapes, a pressure-sensitive type pressure-sensitive adhesive, or an ultraviolet-curable type pressure-sensitive adhesive. In the case where the pressure-sensitive adhesive layer 30 is formed of an ultraviolet-curing type pressure-sensitive adhesive, the pressure-sensitive adhesive layer 30 may have a property that the adhesive property is decreased by irradiation of ultraviolet rays.
The dicing die-bonding integrated type film 100 can be produced by the following method: a dicing tape 50 and a die-bonding film 10 are prepared, and the first surface 10A of the die-bonding film 10 is attached to the pressure-sensitive adhesive layer 30 of the dicing tape 50. At this time, when the surface roughness of the first surface 10A exceeds 1.0 μm, the dicing die-bonding integral film 100 may not be formed.
In the dicing die-bonding integrated film 100, the die-bonding film 10 contains conductive particles in an amount of 75 mass% or more based on the total amount of the die-bonding film. In the die bond film 10, the surface roughness of the first surface 10A is 1.0 μm or less, and the surface roughness of the second surface 10B is 1.0 μm or less. According to the dicing die-bonding integral film, the dicing die-bonding integral film has excellent heat dissipation properties, excellent adhesion between the adhesive layer formed of the die-bonding film and the pressure-sensitive adhesive layer, and further excellent adhesion between the adhesive layer formed of the die-bonding film and the semiconductor wafer even when the dicing die-bonding integral film is attached to the semiconductor wafer.
In the dicing die-bond integrated film 100, the surface roughness of the first surface 10A and the second surface 10B measured in the die-bond film 10 tends to be maintained as it is. According to the test of the inventors of the present invention, for example, the irradiation of ultraviolet rays to the dicing tape does not substantially affect the surface roughness of the first surface 10A of the die bond film 10. Therefore, the first surface 10A and the second surface 10B of the die bond film 10 are exposed from the dicing die bond integrated film 100, and the surface roughness of the exposed first surface and second surface is measured, whereby the surface roughness of the first surface and the second surface of the die bond film 10 can be obtained. When the first surface 10A and the second surface 10B are exposed, the dicing tape 50 and the support film 20 in the dicing die-bonding integrated film 100 may be peeled off at room temperature (20 ℃) to expose the first surface 10A and the second surface 10B, or the dicing tape may be laminated at a temperature of about 40 to 80 ℃ and transferred onto a semiconductor wafer, a base material, or the like, as necessary, to expose the first surface 10A and the second surface 10B.
[ method for manufacturing semiconductor device (semiconductor Package) ]
Fig. 3 is a schematic cross-sectional view showing an embodiment of a method for manufacturing a semiconductor device. In fig. 3, fig. 3(a), fig. 3(b), fig. 3(c), fig. 3(d), fig. 3(e), and fig. 3(f) are cross-sectional views schematically showing the respective steps. The method for manufacturing a semiconductor device includes: a step of attaching the second surface 10B of the die bond film 10 (adhesive layer) of the dicing die-bond integrated film 100 to a semiconductor wafer W (wafer lamination step, see fig. 3(a) and 3 (B)); a step of singulating the semiconductor wafer W, the die bond film 10 (adhesive layer), and the pressure-sensitive adhesive layer 30 (dicing step, see fig. 3 (c)); a step of irradiating ultraviolet rays to the pressure-sensitive adhesive layer 30 (via the base material 40) as necessary (ultraviolet ray irradiation step, refer to fig. 3 (d)); a step of picking up the semiconductor wafer Wa (semiconductor element with adhesive sheet 60) to which the die bonding film 10a is attached from the pressure-sensitive adhesive layer 30a (picking-up step, refer to fig. 3 (e)); and a step of bonding the semiconductor element 60 with the adhesive sheet to the support substrate 80 via the die bonding film 10a (semiconductor element bonding step, refer to fig. 3 (f)).
< wafer lamination Process >
First, the dicing die-bonding integrated film 100 is disposed in a predetermined apparatus. Next, the second surface 10B of the die bond film 10 (adhesive layer) of the dicing die bond integrated film 100 is attached to the surface Ws of the semiconductor wafer W (see fig. 3(a) and 3 (B)). The circuit surface of the semiconductor wafer W is preferably provided on the surface opposite to the front surface Ws.
< cutting Process >
Next, the semiconductor wafer W and the die bond film 10 (adhesive layer) are diced (see fig. 3 c). At this time, a part of the pressure sensitive adhesive layer 30, or the entire pressure sensitive adhesive layer 30 and a part of the base material 40 may be cut. In this way, the dicing die-bonding integrated film 100 can also function as a dicing sheet.
< ultraviolet irradiation Process >
In the case where the pressure-sensitive adhesive layer 30 is formed of an ultraviolet-curable pressure-sensitive adhesive, ultraviolet rays may be irradiated to the pressure-sensitive adhesive layer 30 (via the base material 40) as needed (refer to fig. 3 (d)). In the case of the pressure-sensitive adhesive of the ultraviolet curing type, the pressure-sensitive adhesive layer 30 is cured, and the adhesion between the pressure-sensitive adhesive layer 30 and the die bonding film 10 (adhesive layer) can be decreased. In the ultraviolet irradiation, ultraviolet rays having a wavelength of 200nm to 400nm are preferably used. The ultraviolet irradiation condition is preferably adjusted to 30 to 240mW/cm2In the range of (1) and the irradiation amount is adjusted to 50 to 500mJ/cm2The range of (1).
< picking-up Process >
Next, the base material 40 is expanded, whereby the cut adhesive-sheet-provided semiconductor elements 60 are separated from each other, and the adhesive-sheet-provided semiconductor elements 60 lifted up by the ejector pins 72 from the base material 40 side are sucked by the suction chucks 74 and picked up from the pressure-sensitive adhesive layer 30a (refer to fig. 3 (e)). In addition, the semiconductor element with adhesive sheet 60 has a semiconductor wafer Wa and a die-bonding film 10 a. The semiconductor chip Wa is a semiconductor chip obtained by dicing the semiconductor wafer W into individual pieces, and the die bond film 10a is a die bond film obtained by dicing the die bond film 10 into individual pieces. The pressure-sensitive adhesive layer 30a is a pressure-sensitive adhesive layer in which the pressure-sensitive adhesive layer 30 is singulated by dicing. The pressure-sensitive adhesive layer 30a may remain on the substrate 40 when the semiconductor element 60 with the adhesive sheet is picked up. In the pickup step, the base material 40 does not necessarily need to be expanded, but the pickup property can be further improved by expanding the base material 40.
The amount of lift of the ejector pin 72 can be set as appropriate. Further, from the viewpoint of ensuring sufficient pickup performance even for an extremely thin wafer, for example, 2-stage or 3-stage lift-up may be performed. Further, the semiconductor element 60 with the adhesive sheet may be picked up by a method other than the method using the suction chuck 74.
< semiconductor element bonding Process >
After the semiconductor element 60 with the adhesive sheet is picked up, the semiconductor element 60 with the adhesive sheet is bonded to the support substrate 80 through the die bonding film 10a by thermocompression bonding (see fig. 3 (f)). A plurality of semiconductor elements 60 with adhesive sheets may be bonded on the support substrate 80.
The method of manufacturing a semiconductor device may further include, as necessary: a step of electrically connecting the semiconductor chip Wa to the support substrate 80 by wire bonding; and a step of resin-sealing the semiconductor wafer Wa on the surface 80A of the support substrate 80 with a resin sealing material.
Fig. 4 is a schematic cross-sectional view showing one embodiment of a semiconductor device. The semiconductor device 200 shown in fig. 4 can be manufactured by going through the above-described processes. The semiconductor device 200 can electrically connect the semiconductor chip Wa and the support substrate 80 by wire bonding 70. The semiconductor device 200 can resin-seal the semiconductor wafer Wa on the surface 80A of the support substrate 80 using the resin sealing material 92. On the surface of the support substrate 80 opposite to the surface 80A, solder balls 94 may be formed for electrical connection with an external substrate (motherboard).
Examples
The present invention will be described below with reference to examples, but the present invention is not limited to these examples.
< preparation of adhesive varnish >
Cyclohexanone was added to an epoxy resin as (b) a thermosetting resin, a phenol resin as (c) a curing agent, and an acrylic rubber as (d) an elastomer in the symbols and composition ratios (unit: parts by mass) shown in table 1 and stirred, thereby obtaining a mixture. After dissolving each component, (a) conductive particles were added to the mixture, and the mixture was stirred with a dispersing blade to disperse the components until the components became uniform. Thereafter, (E) a curing accelerator was added and dispersed until the components became uniform, thereby obtaining adhesive varnishes a to E.
Note that the symbols for each component in table 1 mean the following.
(a) Conductive particles
20% Ag-Cu-MA (manufactured by Futian Metal foil powder industries, Ltd., product name, shape: flake shape, average particle diameter of silver-plated copper powder) (laser 50% particle diameter (D)50))：6.0μm～8.8μm)
AO-UCI-9 (manufactured by DOWA Electronics Co., Ltd., product name, shape, spherical shape, and average particle diameter (laser 50% particle diameter (D)) of silver-coated copper powder50))：2.3μm)
(b) Thermosetting resin
N500P-10 (trade name, manufactured by DIC Corporation, bisphenol type epoxy resin, epoxy equivalent: 203g/eq)
YDCN-700-10 (trade name, manufactured by Nichika chemical materials Co., Ltd., cresol novolak type epoxy resin, epoxy equivalent: 215g/eq)
EXA-830CRP (trade name, bisphenol type epoxy resin manufactured by DIC Corporation, epoxy equivalent: 159g/eq, liquid at 25 ℃ C.)
(c) Curing agent
MEH-7800M (trade name, manufactured by Minghe Kasei Co., Ltd., phenol resin, viscosity (150 ℃ C.): 0.31 pas-0.43 pas (3.1 poise-4.3 poise), hydroxyl group equivalent: 175g/e q)
HE-100C-30 (trade name, manufactured by AirWater Ltd., phenylaralkyl type phenol resin, viscosity (150 ℃ C.): 0.27 pas-0.41 pas (2.7 poise-4.1 poise), hydroxyl equivalent: 170g/eq)
(d) Elastic body
HTR-860P-3 (trade name, tradename of Nagase ChemteX, Ltd., glycidyl group-containing acrylic rubber, weight average molecular weight: 100 ten thousand, Tg: -7 ℃ C.)
(e) Curing accelerator
Curezol (Curezol)2PZ-CN (trade name, product of four kingdoms chemical Co., Ltd., 1-cyanoethyl-2-phenylimidazole)
[ Table 1]
Figure BDA0003428459550000181
(example 1)
< preparation of die bond film >
The adhesive varnish B was used for producing the die-bonding film. The binder varnish B subjected to vacuum evacuation was applied to a polyethylene terephthalate (PET) film (38 μm in thickness) subjected to a release treatment as a support film. The applied varnish was dried by heating at 90 ℃ for 5 minutes and then at 140 ℃ for 5 minutes, thereby forming a die-bonding film having a thickness of 20 μm in a B-stage state on the support film. The surface of the produced die bond film opposite to the support film is a first surface, and the surface of the die bond film in contact with the support film is a second surface. The first surface of the produced die bond film was pressed through a PET film at a temperature of 140 ℃, a pressure of 0.5MPa, and a speed of 0.1M/min using a rubber roller, and the surface was smoothed, to obtain the die bond film of example 1.
< measurement of surface roughness >
The surface roughness of the surface of the die bond film of example 1 was measured. The surface roughness (arithmetic average roughness Ra (JIS B0601-2001)) was determined by measuring the surface roughness at a magnification of 50 times using a shape measuring laser microscope VK-X100 (manufactured by Keyance, Inc.). The surface roughness of the surface (first surface) of the die bond film opposite to the support film was measured directly after the surface was exposed. The surface roughness of the surface (second surface) of the die bond film in contact with the support surface was measured after peeling off the support film to expose the surface. The results are shown in Table 2.
< measurement of thermal conductivity >
(preparation of laminate)
The die bond film was laminated at 70 ℃ to a thickness of 100 μm or more using Leon13DX (manufactured by Lami Corporation, ltd.) to obtain a laminate.
(preparation of measurement sample)
The laminate was subjected to a thermal history of 30 minutes at 110 ℃ and 180 minutes at 175 ℃ to obtain a measurement sample.
(measurement of thermal conductivity)
The thermal conductivity of the measurement sample was calculated from the following equation. The results are shown in Table 2.
Thermal conductivity (W/m · K) × specific heat (J/kg · K) × thermal diffusivity (m)2(s) × specific gravity (kg/m)3)
The specific heat, thermal diffusivity, and specific gravity were measured by the following methods. The higher thermal conductivity means more excellent heat dissipation.
(measurement of specific Heat (25 ℃ C.))
The measurement device: differential scanning calorimeter (product name: DSC8500, manufactured by Perkin Elmer Jap an, Japan)
Reference substance: sapphire
Temperature increase rate: 10 ℃/min
Temperature rise temperature range: 20-100 DEG C
(measurement of thermal diffusivity)
The measurement device: thermal diffusivity measuring apparatus (trade name: LFA467 HyperFlash manufactured by Nippon Nachi (Netzsch Japan) Co., Ltd.)
Treatment of measurement samples: blackening treatment with carbon spray on both sides of the measurement sample
The measurement method: xenon flash method
Measurement of ambient temperature: 25 deg.C
(measurement of specific gravity)
The measurement device: electronic gravimeter (product name: SD200L, manufactured by Alfamirage GmbH)
The measurement method: archimedes method
< making of cut die-bonded integral film >
A dicing tape comprising a base material and a pressure-sensitive adhesive layer was prepared, and the first surface of the die-bonding film of example 1 was attached to the pressure-sensitive adhesive layer of the dicing tape at 25 ℃, thereby obtaining a dicing die-bonding integral type film of example 1 comprising the die-bonding film and the dicing tape.
(example 2)
A die bond film of example 2 was obtained in the same manner as in example 1, except that an adhesive varnish C was used in the preparation of the die bond film, and the surface was smoothed by pressing with a rubber roller under conditions of a temperature of 60 ℃, a pressure of 0.5MP a, and a speed of 0.1M/min. The surface roughness and thermal conductivity of the die-bonding film of example 2 were measured in the same manner as in example 1. The results are shown in Table 2. Also, a cut die bond integral type film of example 2 was obtained in the same manner as in example 1.
(example 3)
A die bond film of example 3 was obtained in the same manner as in example 1, except that the adhesive varnish D was used in the preparation of the die bond film and no smoothing treatment was performed. The surface roughness and thermal conductivity of the die-bonding film of example 3 were measured in the same manner as in example 1. The results are shown in Table 2. Also, a cut die bond integral type film of example 3 was obtained in the same manner as in example 1.
(example 4)
A die bond film of example 4 was obtained in the same manner as in example 1, except that the adhesive varnish E was used in the preparation of the die bond film and no smoothing treatment was performed. The surface roughness and thermal conductivity of the die-bonding film of example 4 were measured in the same manner as in example 1. The results are shown in Table 2. Also, a cut die bond integral type film of example 4 was obtained in the same manner as in example 1.
Comparative example 1
A die bond film of comparative example 1 was obtained in the same manner as in example 1, except that the adhesive varnish a was used in the preparation of the die bond film and no smoothing treatment was performed. The surface roughness and thermal conductivity of the die-bonding film of comparative example 1 were measured in the same manner as in example 1. The results are shown in Table 2. Also, a dicing die-bonding integral type film of comparative example 1 was obtained in the same manner as in example 1.
Comparative example 2
A die bond film of comparative example 2 was obtained in the same manner as in example 1, except that the smoothing treatment was not performed. The surface roughness and thermal conductivity of the die-bonding film of comparative example 2 were measured in the same manner as in example 1. The results are shown in Table 2. In addition, although the dicing die-bonding integral film was attempted to be produced, the adhesion between the first surface of the die-bonding film and the pressure-sensitive adhesive layer was insufficient, and the dicing die-bonding integral film could not be produced by the same method as in example 1.
Comparative example 3
The die bond film of comparative example 2 was used for the production of the dicing die bond integrated film of comparative example 3. First, in the die bond film of comparative example 2, the first surface of the die bond film was transferred to another support film (polyethylene terephthalate (PET) film (thickness 38 μm) subjected to release treatment). Next, the support film on the second surface side was peeled off, and the exposed second surface was attached to the pressure-sensitive adhesive layer of the dicing tape similar to comparative example 2 at 25 ℃, to obtain a dicing die-bonding integral type film of comparative example 3.
< evaluation of adhesion in dicing Process >
The dicing die-bonding integral type films of examples 1 to 4 and comparative examples 1 to 3 were prepared. The supporting film of the dicing die-bonding integrated film was peeled off, and the die-bonding film (adhesive layer) of the dicing die-bonding integrated film was attached to a semiconductor wafer having a thickness of 100 μm using a film laminator (manufactured by Tei koku Taping System, inc.). The test piece was cut into 2mm × 2mm and cut into pieces, and the pieces were observed to evaluate the adhesion between the die bond film (adhesive layer) and the pressure-sensitive adhesive layer and the adhesion between the die bond film (adhesive layer) and the semiconductor wafer. The dicing is performed by a step cut method (step cut) using two blades, using cutting blades SD4000-BB and cutting blades SD 4000-DD. In the step dicing method, dicing is performed until the substrate reaches a position of a depth of 50 μm of the semiconductor wafer in the first dicing, and thereafter, dicing is performed until the substrate reaches a position of a depth of 20 μm of the base material of the dicing tape in the second dicing. The cutting conditions were set such that the blade rotation speed was 4000rpm and the cutting speed was 30 mm/sec. After the dicing, the grain-bonded film (adhesive layer) and the pressure-sensitive adhesive layer were observed, and the evaluation of no peeling was "a", and the evaluation of peeling was "B". The die bond film (adhesive layer) and the semiconductor wafer were observed, and the film having no peeling was evaluated as "a" and the film having peeling was evaluated as "B". The results are shown in Table 2.
[ Table 2]
Figure BDA0003428459550000211
As shown in table 2, in comparative example 1, which does not satisfy the requirement that the total amount of the die bond film is 75 mass% or more of the conductive particles, the thermal conductivity is insufficient. In comparative example 2, which does not satisfy the requirement that the surface roughness of the first surface is 1.0 μm or less, the dicing die-bonding integral film cannot be produced, and the adhesion between the die-bonding film (adhesive layer) and the pressure-sensitive adhesive layer of the dicing tape is insufficient. Further, in comparative example 3, which does not satisfy the requirement that the surface roughness of the second surface is 1.0 μm or less, the adhesion between the die bond film (adhesive layer) and the semiconductor wafer is insufficient. From these, it is found that the surface roughness needs to be reduced to smooth both surfaces of the die-bonding film. As shown in example 1, it was determined that performing a physical smoothing process is effective as a method for reducing the surface roughness. As shown in example 2, it was found that the conditions for the smoothing treatment can be further moderated by increasing the content of the epoxy resin that is liquid at 25 ℃ (for example, 2 mass% or more based on the total amount of the die bond film) as the thermosetting resin (b). Further, as shown in examples 3 and 4, it was found that by using spherical conductive particles having a small average particle diameter, the surface roughness of both surfaces of the die bond film can be reduced without performing smoothing treatment.
From the above, it was confirmed that the dicing die-bonding integral film including the adhesive layer and the pressure-sensitive adhesive layer according to the aspect of the invention has excellent heat dissipation properties, excellent adhesion between the adhesive layer and the pressure-sensitive adhesive layer, and further excellent adhesion between the adhesive layer and the semiconductor wafer in the case of being attached to the semiconductor wafer.
Description of the symbols
10-die bond film, 10A-first surface, 10B-second surface, 10A-die bond film, 20-support film, 30A-pressure sensitive adhesive layer, 40-base material, 50-dicing tape, 60-semiconductor element with adhesive sheet, 70-wire bond wire, 72-thimble, 74-suction chuck, 80-support substrate, 92-resin sealing material, 94-solder ball, 100-dicing die bond integral film, 200-semiconductor device.

Claims (19)

1. A cut die-bonded monolithic film, comprising:
a dicing tape having a base material and a pressure-sensitive adhesive layer disposed on the base material; and
a die-bonding film having a first surface and a second surface opposite to the first surface, and disposed on the pressure-sensitive adhesive layer of the dicing tape such that the first surface is in contact with the pressure-sensitive adhesive layer,
the die bond film contains 75 mass% or more of conductive particles based on the total amount of the die bond film,
in the die bond film, the surface roughness of the first surface is 1.0 μm or less, and the surface roughness of the second surface is 1.0 μm or less.
2. The cut die-bonded integral film of claim 1,
the surface roughness of the first surface is greater than the surface roughness of the second surface.
3. The cut die-bonded integral film according to claim 1 or 2,
the first surface has a surface roughness of 0.25 [ mu ] m or more.
4. The cut die-bonded integral film according to any one of claims 1 to 3,
the thermal conductivity of the grain bonding film is 1.6W/mK or more.
5. The cut die-bonded integral film according to any one of claims 1 to 4,
the conductive particles are spherical.
6. The cut die-bonded integral film of claim 5,
the conductive particles have an average particle diameter of 3.0 [ mu ] m or less.
7. The cut die-bonded integral film according to any one of claims 1 to 6,
the conductive particles have a thermal conductivity (20 ℃) of 250W/m.K or more.
8. The cut die-bonded integral film according to any one of claims 1 to 7,
the die bond film further contains a thermosetting resin, a curing agent, and an elastomer.
9. The cut die-bonded integral film of claim 8,
the thermosetting resin comprises an epoxy resin that is liquid at 25 ℃,
the content of the epoxy resin that is liquid at 25 ℃ is 2 mass% or more based on the total amount of the die bond film.
10. A method of manufacturing a semiconductor device, comprising:
attaching the second surface of the die bond film of the cut die bond integrated type film as claimed in any one of claims 1 to 9 to a semiconductor wafer;
a step of singulating the semiconductor wafer and the die bond film;
picking up the semiconductor wafer with the die bonding film attached thereto from the dicing tape; and
and bonding the semiconductor chip to a support substrate via the die bonding film.
11. A die bond film having a first surface and a second surface opposite to the first surface, in which,
contains at least 75% by mass of conductive particles based on the total amount of the grain bonding film, and
the first surface has a surface roughness of 1.0 [ mu ] m or less, and the second surface has a surface roughness of 1.0 [ mu ] m or less.
12. The die-bonding film of claim 11, wherein,
the surface roughness of the first surface is greater than the surface roughness of the second surface.
13. The die-bonding film according to claim 11 or 12, wherein,
the first surface has a surface roughness of 0.25 [ mu ] m or more.
14. The die-bonding film according to any one of claims 11 to 13,
the thermal conductivity of the grain bonding film is 1.6W/mK or more.
15. The die-bonding film according to any one of claims 11 to 14,
the conductive particles are spherical.
16. The die-bonding film of claim 15, wherein,
the conductive particles have an average particle diameter of 3.0 [ mu ] m or less.
17. The die-bonding film according to any one of claims 11 to 16,
the conductive particles have a thermal conductivity (20 ℃) of 250W/m.K or more.
18. The die-bonding film according to any one of claims 11 to 17, further comprising a thermosetting resin, a curing agent and an elastomer.
19. The die-bonding film of claim 18, wherein,
the thermosetting resin comprises an epoxy resin that is liquid at 25 ℃,
the content of the epoxy resin that is liquid at 25 ℃ is 2 mass% or more based on the total amount of the die bond film.
CN202080046101.6A 2019-07-05 2020-07-01 Dicing die-bonding integrated film, die-bonding film, and method for manufacturing semiconductor device Pending CN114008760A (en)

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