WO2022009571A1 - Integrated dicing die-bonding film, die-bonding film, and method for producing semiconductor device - Google Patents

Integrated dicing die-bonding film, die-bonding film, and method for producing semiconductor device Download PDF

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Publication number
WO2022009571A1
WO2022009571A1 PCT/JP2021/021053 JP2021021053W WO2022009571A1 WO 2022009571 A1 WO2022009571 A1 WO 2022009571A1 JP 2021021053 W JP2021021053 W JP 2021021053W WO 2022009571 A1 WO2022009571 A1 WO 2022009571A1
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Prior art keywords
die bonding
film
bonding film
dicing
adhesive layer
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PCT/JP2021/021053
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French (fr)
Japanese (ja)
Inventor
圭 板垣
紘平 谷口
祐也 平本
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昭和電工マテリアルズ株式会社
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Priority to KR1020227045039A priority Critical patent/KR20230036070A/en
Priority to CN202180045009.2A priority patent/CN115702477A/en
Publication of WO2022009571A1 publication Critical patent/WO2022009571A1/en

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C08K9/02—Ingredients treated with inorganic substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C08K2003/0806—Silver
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors

Definitions

  • This disclosure relates to a method for manufacturing a dicing / die bonding integrated film, a die bonding film, and a semiconductor device.
  • Patent Document 1 discloses a viscous adhesive sheet (dicing die bonding sheet) having both a function of fixing a semiconductor wafer in a dicing process and a function of adhering a semiconductor chip to a substrate in a dicing process. In the dicing step, the semiconductor wafer and the adhesive layer are separated into individual pieces to obtain a chip with an adhesive piece.
  • Patent Document 2 discloses a conductive film-like adhesive and a dicing tape with a film-like adhesive, which have higher heat dissipation after curing than those before curing.
  • the conventional dicing / die bonding integrated film does not have sufficient heat dissipation, and there is still room for improvement.
  • one aspect of the present disclosure is to provide a dicing / die bonding integrated film having excellent heat dissipation.
  • the present inventors have found that if the silver-containing particles have an oxide layer (oxide film) on the surface, the silver-containing particles do not have an oxide layer (oxide film). In comparison, it was found that the heat dissipation tends to be insufficient. As a result of further studies by the present inventors, they have found that the die bonding film contains a flux agent to exhibit excellent heat dissipation, and have completed the invention of the present disclosure.
  • the dicing / die bonding integrated film contains silver-containing particles having an oxide layer (oxide film) on the surface and a flux agent.
  • the content of the silver-containing particles is 75% by mass or more based on the total amount of the die bonding film. According to such a dicing / die bonding integrated film, it can have excellent heat dissipation. The reason why such an effect is exerted is not always clear, but it is conceivable that, for example, the flux agent sufficiently reduces and removes the oxide layer (oxide film) on the metal surface, and further maintains the state.
  • the flux agent may be an aromatic carboxylic acid.
  • a dicing / die bonding integrated film having an adhesive layer and an adhesive layer if the adhesive strength between the adhesive layer and the adhesive layer is not sufficiently reduced, a chip with an adhesive piece is picked up from the adhesive layer in a subsequent pickup step. There may be a problem that it cannot be done.
  • an aromatic carboxylic acid as the flux agent, it is possible to sufficiently reduce the adhesive strength between the adhesive layer and the adhesive layer after irradiation with ultraviolet rays.
  • the die bonding film may further contain a thermosetting resin, a curing agent, and an elastomer.
  • the die bonding film containing these tends to easily adjust the surface roughness (Ra).
  • the thermosetting resin may contain an epoxy resin that is liquid at 25 ° C. When the thermosetting resin contains such an epoxy resin, it tends to be easy to obtain a die bonding film having an improved surface roughness (Ra).
  • the method for manufacturing the semiconductor device includes a step of attaching the die bonding film of the dicing / die bonding integrated film described above to the semiconductor wafer, a step of separating the semiconductor wafer and the die bonding film into individual pieces, and a die from the dicing tape.
  • a step of picking up the semiconductor chip to which the bonding film piece is attached and a step of adhering the semiconductor chip to the support substrate via the die bonding film piece are provided.
  • the method for manufacturing the semiconductor device may further include a step of irradiating the adhesive layer with ultraviolet rays after the step of individualizing the semiconductor wafer and the die bonding film. According to such a method for manufacturing a semiconductor device, since the dicing / die bonding integrated film is used, it is possible to manufacture a semiconductor device having excellent heat dissipation.
  • the die bonding film contains silver-containing particles having an oxide layer on the surface and a flux agent.
  • the content of the silver-containing particles is 75% by mass or more based on the total amount of the die bonding film.
  • a dicing / die bonding integrated film having excellent heat dissipation is disclosed.
  • the dicing / die bonding integrated film according to some forms can sufficiently reduce the adhesive strength between the adhesive layer and the adhesive layer after irradiation with ultraviolet rays.
  • a method for manufacturing a semiconductor device using such a dicing / die bonding integrated film there is provided a dicing / die bonding integrated film suitable for use in such a dicing / die bonding integrated film.
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of a die bonding film.
  • FIG. 2 is a schematic cross-sectional view showing an embodiment of a dicing / die bonding integrated film.
  • FIG. 3 is a schematic cross-sectional view showing an embodiment of a method for manufacturing a semiconductor device. 3 (a), (b), (c), (d), (e), and (f) are sectional views schematically showing each step.
  • FIG. 4 is a schematic cross-sectional view showing an embodiment of a semiconductor device.
  • the numerical range indicated by using "-" indicates a range including the numerical values before and after "-" as the minimum value and the maximum value, respectively.
  • the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of another numerical range described stepwise. good.
  • the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.
  • (meth) acrylate means acrylate or the corresponding methacrylate.
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of a die bonding film.
  • the die bonding film 10 shown in FIG. 1 has a first surface 10A and a second surface 10B opposite to the first surface 10A.
  • the first surface 10A may be a surface arranged on the adhesive layer of the dicing tape, as will be described later.
  • the die bonding film 10 may be provided on the support film 20.
  • the die bonding film 10 is thermosetting and can be in a semi-cured (B stage) state and then in a completely cured product (C stage) state after a curing treatment.
  • the die bonding film 10 contains (a) silver-containing particles having an oxide layer on the surface and (b) a flux agent, and if necessary, (c) a thermosetting resin, (d) a curing agent, and ( f) It may further contain an elastomer.
  • the component (a) is a component used to enhance heat dissipation in a die bonding film.
  • the silver-containing particles may be, for example, silver particles composed of silver or silver-coated metal particles (silver-coated copper particles or the like) whose surface is coated with silver.
  • the silver-containing particles may be silver particles composed of silver.
  • the component (a) is not particularly limited as long as it is silver-containing particles having an oxide layer (oxide film) on the surface, but from the viewpoint of availability and the like, for example, silver produced by an atomizing method. It may be contained particles.
  • the atomizing method is a method in which a molten metal or alloy is made to flow out from a small hole at the bottom of a crucible to form a trickle, and high-speed air, nitrogen, argon, water, etc.
  • Such silver-containing particles include Ag-HWQ series (trade name, manufactured by Fukuda Metal Foil Powder Industry Co., Ltd.), conductive atomized powder (trade name, manufactured by DOWA Electronics Co., Ltd.) and the like.
  • the average particle size of the component (a) may be 0.01 to 10 ⁇ m.
  • the average particle size of the component (a) is 0.01 ⁇ m or more, it is possible to prevent an increase in viscosity when the adhesive varnish is produced, and a desired amount of the component (a) can be contained in the die bonding film. There is a tendency to ensure the wettability of the die bonding film to the adherend and to exhibit better adhesiveness.
  • the average particle size of the component (a) is 10 ⁇ m or less, the film formability is more excellent, and the heat dissipation property due to the addition of the component (a) tends to be further improved.
  • the average particle size of the component (a) may be 0.1 ⁇ m or more, 0.5 ⁇ m or more, 1.0 ⁇ m or more, or 1.5 ⁇ m or more, 8.0 ⁇ m or less, 7.0 ⁇ m or less, 6.0 ⁇ m or less. , 5.0 ⁇ m or less, 4.0 ⁇ m or less, or 3.0 ⁇ m or less.
  • the average particle size of the component (a) means the particle size (D 50 ) when the ratio (volume fraction) to the volume of the entire component (a) is 50%.
  • a suspension in which the component (a) is suspended in water is subjected to a laser scattering method using a laser scattering type particle size measuring device (for example, Microtrac). It can be determined by measuring.
  • the component (a) is spherical particles and the average particle size thereof is 5.0 ⁇ m or less.
  • the content of the component (a) is 75% by mass or more based on the total amount of the die bonding film.
  • the content of the component (a) may be 77% by mass or more, 80% by mass or more, 83% by mass or more, or 85% by mass or more based on the total amount of the die bonding film.
  • the upper limit of the content of the component (a) is not particularly limited, but may be 98% by mass or less, 96% by mass or less, or 95% by mass or less based on the total amount of the die bonding film.
  • the component (b) is a component for reducing and removing the oxide layer (oxide film) in the component (a).
  • the component (b) may be, for example, a compound having a carboxy group (carboxylic acid). Examples of such the component (b) include aliphatic carboxylic acids and aromatic carboxylic acids. These may be used individually by 1 type or in combination of 2 or more type.
  • the component (b) may be solid at 25 ° C.
  • Examples of the aliphatic carboxylic acid include succinic acid (melting point: 184 ° C.), glutaric acid (melting point: 95 to 98 ° C.), adipic acid (melting point: 152 ° C.), pimelic acid (melting point: 103 to 105 ° C.), and sverin. Acid (melting point: 141-144 ° C), azelaic acid (melting point: 109 ° C), sebacic acid (melting point: 133-137 ° C), undecanedioic acid (melting point: 28-31 ° C), dodecanedioic acid (melting point: 127-) 129 ° C.) and the like.
  • the aliphatic carboxylic acid may be, for example, glutaric acid.
  • aromatic carboxylic acid examples include diphenylacetic acid (melting point: 147 to 149 ° C.), benzylic acid (melting point: 150 to 152 ° C.), and 4,4-bis (4-hydroxyphenyl) valeric acid (melting point: 147 to 177 ° C.).
  • the aromatic carboxylic acid may be, for example, benzylic acid.
  • the component (b) may be a compound (carboxylic acid) having a carboxy group that satisfies one or more of the following conditions from the viewpoint of sufficiently reducing the adhesive strength between the adhesive layer and the adhesive layer after irradiation with ultraviolet rays.
  • -The component (b) is an aromatic carboxylic acid.
  • the melting point of the component (b) is 100 ° C. or higher, preferably 120 ° C. or higher, more preferably 140 ° C. or higher, 200 ° C. or lower, preferably 180 ° C. or lower, and more preferably 160 ° C. or lower.
  • -The component (b) is a carboxylic acid having a hydroxyl group.
  • the component (b) may be, for example, glutaric acid or benzylic acid, or may be benzylic acid.
  • the content of the component (b) may be 0.1 to 15% by mass based on the total amount of the die bonding film.
  • the content of the component (b) is 0.1% by mass or more based on the total amount of the die bonding film, the oxide layer in the component (a) can be sufficiently reduced and removed, and the heat dissipation is improved. There is a tendency to be able to.
  • the content of the component (b) is 15% by mass or less based on the total amount of the die bonding film, the amount of other components (particularly, the component (c), the component (d), and the component (e)). Can be sufficiently secured, an adherend of the die bonding film can be secured, and the film formability tends to be excellent.
  • the content of the component (b) is 0.2% by mass or more, 0.5% by mass or more, 0.8% by mass or more, 1% by mass or more, and 1.2% by mass or more based on the total amount of the die bonding film. , Or 1.5% by mass or more, and may be 12% by mass or less, 10% by mass or less, 8% by mass or less, or 6% by mass or less.
  • Thermosetting resin is a component having a property of forming a three-dimensional bond between molecules and being cured by heating or the like, and is a component exhibiting an adhesive action after curing.
  • the component (c) may be an epoxy resin.
  • the component (c) may contain an epoxy resin liquid at 25 ° C.
  • the epoxy resin can be used without particular limitation as long as it has an epoxy group in the molecule.
  • the epoxy resin may have two or more epoxy groups in the molecule.
  • epoxy resin examples include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolak type epoxy resin, bisphenol A novolak type epoxy resin, and bisphenol F novolak type epoxy resin.
  • Stilben type epoxy resin triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenolmethane type epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, biphenyl aralkyl type epoxy resin, naphthalene type epoxy resin, dicyclopentadiene type
  • examples thereof include epoxy resins, polyfunctional phenols, polycyclic aromatic diglycidyl ether compounds such as anthracene, and the like. These may be used individually by 1 type or in combination of 2 or more type.
  • the epoxy resin may be a bisphenol type epoxy resin or a cresol novolac type epoxy resin from the viewpoint of heat resistance of the cured product and the like.
  • the epoxy resin may contain an epoxy resin that is liquid at 25 ° C. By including such an epoxy resin, it tends to be easy to obtain a die bonding film having an improved surface roughness (Ra).
  • Examples of commercially available products of epoxy resins liquid at 25 ° C. include EXA-830CRP (trade name, manufactured by DIC Corporation), YDF-8170C (trade name, manufactured by Nittetsu Chemical & Materials Co., Ltd.) and the like.
  • the epoxy equivalent of the epoxy resin is not particularly limited, but may be 90 to 300 g / eq or 110 to 290 g / eq. When the epoxy equivalent of the epoxy resin is in such a range, it tends to be easy to secure the fluidity of the adhesive composition when forming the die bonding film while maintaining the bulk strength of the die bonding film.
  • the content of the component (c) may be 0.1% by mass or more, 0.5% by mass or more, 1% by mass or more, or 1.5% by mass or more, based on the total amount of the die bonding film. It may be 1% by mass or less, 12% by mass or less, 10% by mass or less, 8% by mass or less, or 6% by mass or less.
  • the mass ratio of the epoxy resin to the component (c) is 10 to 100 as a percentage. %, 40-100%, 60% -100%, or 80% -100%.
  • the content of the epoxy resin is 0.1% by mass or more, 0.5% by mass or more, and 1% by mass based on the total amount of the die bonding film. It may be more than or equal to 1.5% by mass, and may be 15% by mass or less, 12% by mass or less, 10% by mass or less, 8% by mass or less, or 6% by mass or less.
  • the component (d) may be a phenol resin that can be a curing agent for an epoxy resin.
  • the phenol resin can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule.
  • examples of the phenol resin include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol, and / or naphthols such as ⁇ -naphthol, ⁇ -naphthol and dihydroxynaphthalene, and formaldehyde and the like.
  • Phenols such as novolak type phenol resin, allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolac, phenol and /
  • examples thereof include phenol aralkyl resin synthesized from naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl, naphthol aralkyl resin, biphenyl aralkyl type phenol resin, phenyl aralkyl type phenol resin and the like. These may be used individually by 1 type or in combination of 2 or more type.
  • the hydroxyl group equivalent of the phenol resin may be 40 to 300 g / eq, 70 to 290 g / eq, or 100 to 280 g / eq.
  • the hydroxyl group equivalent of the phenol resin is 40 g / eq or more, the storage elastic modulus of the film tends to be further improved, and when it is 300 g / eq or less, it is possible to prevent problems due to the generation of foaming, outgas and the like. ..
  • the ratio of the epoxy equivalent of the epoxy resin as the component (c) to the hydroxyl equivalent of the phenol resin as the component (c) / the epoxy equivalent of the epoxy resin as the component / the hydroxyl equivalent of the phenol resin as the component (d). ) are 0.30 / 0.70 to 0.70 / 0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0 from the viewpoint of curability. It may be .60 / 0.40, or 0.45 / 0.55 to 0.55 / 0.45.
  • the equivalent amount ratio is 0.30 / 0.70 or more, more sufficient curability tends to be obtained.
  • the equivalent equivalent ratio is 0.70 / 0.30 or less, it is possible to prevent the viscosity from becoming too high, and it is possible to obtain more sufficient fluidity.
  • the content of the component (d) may be 0.1% by mass or more, 0.3% by mass or more, 0.5% by mass or more, or 1% by mass or more, based on the total amount of the die bonding film. It may be 10% by mass or less, 8% by mass or less, 6% by mass or less, or 4% by mass or less.
  • Component (e) Elastomer
  • the component (e) include polyimide resin, acrylic resin, urethane resin, polyphenylene ether resin, polyetherimide resin, phenoxy resin, modified polyphenylene ether resin and the like.
  • the component (e) may be these resins, a resin having a crosslinkable functional group, or an acrylic resin having a crosslinkable functional group.
  • the acrylic resin means a polymer containing a structural unit derived from a (meth) acrylic acid ester.
  • the acrylic resin may be a polymer containing a structural unit derived from a (meth) acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxy group as a structural unit. Further, the acrylic resin may be acrylic rubber such as a copolymer of (meth) acrylic acid ester and acrylic nitrile. These may be used individually by 1 type or in combination of 2 or more type.
  • acrylic resins examples include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, HTR-860P-3, HTR-860P-3CSP, and HTR-860P-3CSP-3DB ( All of them are manufactured by Nagase Chemtex Co., Ltd.).
  • the glass transition temperature (Tg) of the component (e) may be ⁇ 50 to 50 ° C. or ⁇ 30 to 20 ° C.
  • Tg of the acrylic resin is ⁇ 50 ° C. or higher, the tackiness of the die bonding film is lowered, so that the handleability tends to be further improved.
  • Tg of the acrylic resin is 50 ° C. or lower, the fluidity of the adhesive composition when forming the die bonding film tends to be more sufficiently secured.
  • the glass transition temperature (Tg) of the component (e) means a value measured using a DSC (heat differential scanning calorimeter) (for example, manufactured by Rigaku Co., Ltd., trade name: Thermo Plus 2).
  • the weight average molecular weight (Mw) of the component (e) may be 50,000 to 1.6 million, 100,000 to 1.4 million, or 300,000 to 1.2 million. When the weight average molecular weight of the component (e) is 50,000 or more, the film forming property tends to be better. When the weight average molecular weight of the component (e) is 1.6 million or less, the fluidity of the adhesive composition when forming the die bonding film tends to be superior.
  • the weight average molecular weight (Mw) is a value measured by gel permeation chromatography (GPC) and converted using a calibration curve made of standard polystyrene.
  • the measuring device for the weight average molecular weight (Mw) of the component, the measuring conditions, and the like are as follows, for example.
  • Column eluent hereinafter referred to as "THF" in which (diameter) x 300 mm) are connected in this order.
  • the content of the component (e) may be 0.1% by mass or more, 0.3% by mass or more, 0.5% by mass or more, or 0.8% by mass or more based on the total amount of the die bonding film. It may be 10% by mass or less, 8% by mass or less, 5% by mass or less, or 3% by mass or less.
  • the die bonding film 10 may further contain (f) a curing accelerator.
  • Component (f) Curing accelerator
  • the adhesiveness and the connection reliability tend to be more compatible.
  • the component (f) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts and the like. These may be used individually by 1 type or in combination of 2 or more type.
  • the component (f) may be imidazoles and derivatives thereof from the viewpoint of reactivity.
  • imidazoles examples include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. These may be used individually by 1 type or in combination of 2 or more type.
  • the content of the component (f) may be 0.001 to 1% by mass based on the total amount of the die bonding film. When the content of the component (f) is in such a range, the adhesiveness and the connection reliability tend to be more compatible.
  • the die bonding film 10 may further contain a coupling agent, an antioxidant, a rheology control agent, a leveling agent and the like as other components other than the components (a) to (f).
  • a coupling agent include ⁇ -ureidopropyltriethoxysilane, ⁇ -mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3- (2-aminoethyl) aminopropyltrimethoxysilane, and the like. ..
  • the content of other components may be 0.01 to 3% by mass based on the total amount of the die bonding film.
  • the die bonding film 10 shown in FIG. 1 is a film-like adhesive composition containing the above-mentioned components (a) and (b), and if necessary, components (c) to (f) and other components. It can be produced by forming in.
  • a die bonding film 10 can be formed by applying an adhesive composition to the support film 20.
  • the adhesive composition can be used as a solvent-diluted adhesive varnish.
  • the die bonding film 10 can be formed by applying the adhesive varnish to the support film 20 and heating and drying the solvent to remove it.
  • the solvent is not particularly limited as long as it can dissolve components other than the component (a).
  • the solvent include aromatic hydrocarbons such as toluene, xylene, mesityrene, cumene, and p-simene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; tetrahydrofuran, 1,4-dioxane and the like.
  • Cyclic ethers such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, ⁇ -butyrolactone; Carbonated esters such as ethylene carbonate and propylene carbonate; amides such as N, N-dimethylformamide, N, N-dimethylacetamide and N-methyl-2-pyrrolidone can be mentioned. These may be used individually by 1 type or in combination of 2 or more type.
  • the solvent may be toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, or cyclohexanone from the viewpoint of solubility and boiling point.
  • the concentration of the solid component in the adhesive varnish may be 10 to 80% by mass based on the total mass of the adhesive varnish.
  • the adhesive varnish can be prepared by mixing and kneading the components (a) to (f), other components, and a solvent.
  • the order of mixing and kneading of each component is not particularly limited and can be set as appropriate.
  • Mixing and kneading can be performed by appropriately combining a disperser such as a normal stirrer, a raft machine, a triple roll, a ball mill, and a bead mill.
  • air bubbles in the varnish may be removed by vacuum degassing or the like.
  • the support film 20 is not particularly limited, and examples thereof include films such as polytetrafluoroethylene, polyethylene, polypropylene, polymethylpentene, polyethylene terephthalate, and polyimide.
  • the support film may be subjected to a mold release treatment.
  • the thickness of the support film 20 may be, for example, 10 to 200 ⁇ m or 20 to 170 ⁇ m.
  • a known method can be used, and for example, a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, a curtain coating method and the like can be used. Can be mentioned.
  • the conditions for heating and drying are not particularly limited as long as the solvent used is sufficiently volatilized, but may be, for example, 0.1 to 90 minutes at 50 to 200 ° C.
  • the thickness of the die bonding film 10 can be appropriately adjusted according to the intended use, but may be, for example, 3 to 200 ⁇ m. When the thickness of the die bonding film 10 is 3 ⁇ m or more, the adhesive strength with the semiconductor wafer tends to be sufficient, and when the thickness is 200 ⁇ m or less, the heat dissipation property tends to be sufficient.
  • the thickness of the die bonding film 10 may be 5 to 100 ⁇ m or 10 to 50 ⁇ m from the viewpoint of adhesive strength and thinning of the semiconductor device.
  • the surface roughness of the first surface 10A may be, for example, 1.0 ⁇ m or less.
  • the first surface 10A is a surface arranged on the adhesive layer of the dicing tape (that is, a surface opposite to the surface in contact with the support film 20 of the dicing film 10).
  • the surface roughness means the arithmetic average roughness Ra (JIS B 0601-2001), and the arithmetic average roughness Ra means the value calculated by the method described in the examples.
  • the measurement magnification may be 50 to 100 times.
  • the surface roughness of the first surface 10A may be, for example, 0.9 ⁇ m or less, 0.8 ⁇ m or less, 0.7 ⁇ m or less, or 0.6 ⁇ m or less from the viewpoint of preventing deterioration of adhesiveness due to the surface roughness. good.
  • the surface roughness of the first surface 10A may be 0.1 ⁇ m or more, 0.2 ⁇ m or more, or 0.3 ⁇ m or more from the viewpoint of preventing a decrease in the anchor effect due to the surface smoothness becoming too high.
  • the die bonding film of the present disclosure it is considered that the component (b) sufficiently reduces and removes the oxide layer (oxide film) on the surface of the component (a), and the state is maintained, and as a result, it is excellent. It can be a person who has good heat dissipation. Therefore, the die bonding film of the present disclosure can be suitably used as a dicing / die bonding integrated film in combination with a dicing tape having an adhesive layer.
  • FIG. 2 is a schematic cross-sectional view showing an embodiment of a dicing / die bonding integrated film.
  • the dicing-die bonding integrated film 100 shown in FIG. 2 is arranged on a dicing tape 50 having a base material 40 and an adhesive layer 30 provided on the base material 40, and on the adhesive layer 30 of the dicing tape 50.
  • a dicing film 10 is provided.
  • the die bonding film 10 has a first surface 10A and a second surface 10B opposite to the first surface 10A.
  • the dicing / die bonding integrated film 100 may include a support film 20 on the second surface 10B of the dicing / die bonding film 10.
  • Examples of the base material 40 in the dicing tape 50 include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. Further, the base material 40 may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment, if necessary.
  • the adhesive layer 30 may be an adhesive layer made of an adhesive used in the field of dicing tape, and even if it is an adhesive layer made of a pressure-sensitive adhesive, it is an adhesive layer made of an ultraviolet curable adhesive. You may. When the adhesive layer 30 is an adhesive layer made of an ultraviolet curable adhesive, the adhesive layer 30 may have a property that the adhesiveness is lowered by irradiation with ultraviolet rays.
  • the dicing / die bonding integrated film 100 can be produced by preparing the dicing tape 50 and the dicing film 10 and attaching the first surface 10A of the dicing tape 10 to the adhesive layer 30 of the dicing tape 50. ..
  • the die bonding film 10 contains 75% by mass or more of the component (a) based on the total amount of the die bonding film. According to the dicing / die bonding integrated film provided with such an adhesive layer and an adhesive layer, it is possible to have excellent heat dissipation.
  • FIG. 3 is a schematic cross-sectional view showing an embodiment of a method for manufacturing a semiconductor device.
  • the method for manufacturing the semiconductor device is a step of attaching the die bonding film 10 (adhesive layer) (second surface 10B) of the above-mentioned dicing / die bonding integrated film 100 to the semiconductor wafer W (wafer laminating step, FIG. 3).
  • a step of irradiating the 30 with ultraviolet rays (via the base material 40) (ultraviolet irradiation step, see FIG. 3D) and a semiconductor chip Wa (with an adhesive piece) to which the die bonding film piece 10a is attached from the adhesive layer 30a.
  • a step of picking up the semiconductor chip 60) (pickup step, see FIG. 3E) and a step of adhering the semiconductor chip 60 with an adhesive piece to the support substrate 80 via the die bonding film piece 10a (semiconductor chip bonding step, (See FIG. 3 (f))).
  • the dicing / die bonding integrated film 100 is placed in a predetermined device. Subsequently, the second surface 10B of the die bonding film 10 (adhesive layer) of the dicing / die bonding integrated film 100 is attached to the surface Ws of the semiconductor wafer W (see FIGS. 3A and 3B).
  • the circuit surface of the semiconductor wafer W is preferably provided on the surface opposite to the surface Ws.
  • the semiconductor wafer W and the die bonding film 10 are diced (see FIG. 3C). At this time, a part of the adhesive layer 30, the whole of the adhesive layer 30, and a part of the base material 40 may be diced. As described above, the dicing-die bonding integrated film 100 also functions as a dicing sheet.
  • the adhesive layer 30 is irradiated with ultraviolet rays (via the base material 40) (see FIG. 3D). As a result, the adhesive layer 30 is cured, and the adhesive strength between the adhesive layer 30 and the die bonding film 10 (adhesive layer) can be sufficiently reduced.
  • ultraviolet irradiation it is preferable to use ultraviolet rays having a wavelength of 200 to 400 nm.
  • the ultraviolet irradiation conditions it is preferable to adjust the illuminance and the irradiation amount to the range of 30 to 240 mW / cm 2 and the range of 50 to 500 mJ / cm 2, respectively.
  • the semiconductor chip 60 with an adhesive piece has a semiconductor chip Wa and a die bonding film piece 10a.
  • the semiconductor chip Wa is a semiconductor wafer W individualized by dicing
  • the die bonding film piece 10a is an individualized die bonding film 10 by dicing.
  • the adhesive layer 30a is an adhesive layer 30 individualized by dicing. The adhesive layer 30a may remain on the base material 40 when the semiconductor chip 60 with the adhesive piece is picked up. In the pick-up step, it is not always necessary to expand the base material 40, but by expanding the base material 40, the pick-up property can be further improved.
  • the amount of push-up by the needle 72 can be set as appropriate. Further, from the viewpoint of ensuring sufficient pick-up property even for ultra-thin wafers, for example, two-stage or three-stage push-up may be performed. Further, the semiconductor chip 60 with an adhesive piece may be picked up by a method other than the method using the suction collet 74.
  • the semiconductor device manufacturing method includes, if necessary, a step of electrically connecting the semiconductor chip Wa and the support substrate 80 by wire bonding, and a semiconductor chip using a resin encapsulant on the surface 80A of the support substrate 80. It may further include a step of sealing Wa with a resin.
  • FIG. 4 is a schematic cross-sectional view showing an embodiment of a semiconductor device.
  • the semiconductor device 200 shown in FIG. 4 can be manufactured by going through the above steps.
  • the semiconductor chip Wa and the support substrate 80 may be electrically connected by a wire bond 70.
  • the semiconductor chip Wa may be resin-sealed on the surface 80A of the support substrate 80 by using the resin encapsulant 92.
  • Solder balls 94 may be formed on the surface of the support substrate 80 opposite to the surface 80A for electrical connection with an external substrate (motherboard).
  • Silver-containing particles having an oxide layer on the surface-Ag-HWQ 1.5 ⁇ m (trade name, silver particles manufactured by the atomizing method, manufactured by Fukuda Metal Foil Powder Industry Co., Ltd., shape: spherical, average particle size (laser) 50% particle size (D 50 )): 1.0 to 2.0 ⁇ m)
  • Thermosetting resin EXA-830CRP (trade name, manufactured by DIC Corporation, bisphenol type epoxy resin, epoxy equivalent: 159 g / eq, liquid at 25 ° C)
  • E Elastomer HTR-860P-3CSP (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 1 million, Tg: -7 ° C)
  • SG-280 EK23 trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 900,000, Tg: -29 ° C
  • Example 1 ⁇ Making a die bonding film>
  • Adhesive varnish A was used to prepare the die bonding film.
  • the vacuum-defoamed adhesive varnish A was applied onto a support film, a polyethylene terephthalate (PET) film (thickness 38 ⁇ m) that had undergone a mold release treatment.
  • PET polyethylene terephthalate
  • the applied varnish was heat-dried at 90 ° C. for 5 minutes and then at 130 ° C. for 5 minutes in two steps to prepare a die bonding film of Example 1 having a thickness of 20 ⁇ m in a B stage state on a support film. ..
  • ⁇ Measurement of thermal conductivity> (Making a film for measuring thermal conductivity)
  • a plurality of die bonding films of Example 1 were laminated with rubber rolls to prepare a laminated film having a thickness of 100 ⁇ m or more.
  • the obtained laminated film was thermally cured at 110 ° C. for 1 hour and then at 170 ° C. for 3 hours with both sides covered with the PET film to obtain a film for measuring thermal conductivity.
  • Thermal conductivity of the film for measuring thermal conductivity was calculated by the following formula. The results are shown in Table 2.
  • Thermal conductivity (W / m ⁇ K) thermal diffusivity ⁇ (mm 2 / s) ⁇ specific heat Cp (J / g ⁇ K) ⁇ specific gravity (g / cm 3 )
  • the thermal diffusivity ⁇ , the specific heat Cp, and the specific gravity were measured by the following methods. Higher thermal conductivity means better heat dissipation.
  • a dicing tape (trade name: 6363-30, manufactured by Hitachi Kasei Co., Ltd.) having a base material and an adhesive layer is prepared, and the adhesive layer of the dicing tape is bonded to the die bonding film of Example 1 with a rubber roll to form a base.
  • the dicing / die bonding integrated film of Example 1 having a material, an adhesive layer, and an adhesive layer (die bonding film) in this order was produced.
  • the dicing / die bonding integrated film of Example 1 was prepared, and the T-shaped peel strength between the adhesive layer and the adhesive layer was measured using the film.
  • An autograph EZ-S 50N (manufactured by Shimadzu Corporation) was used for the measurement. Attach Easy Cut Tape (manufactured by Oji Tuck Co., Ltd.) to the adhesive layer (die bonding film) side of the dicing / die bonding integrated film, and cut out the dicing / die bonding integrated film in a size of 25 mm in width and 100 mm in length. I got a sample.
  • the T-shaped peel strength between the adhesive layer and the adhesive layer before and after ultraviolet irradiation was measured at a distance between chucks of 50 mm and a speed of 300 mm / min.
  • the ultraviolet irradiation was performed with a halogen lamp under the conditions of 80 mW / cm 2 and 200 mJ / cm 2.
  • the measurement was performed three times each before and after the ultraviolet irradiation, and the average value of the three times was taken as the peel strength.
  • the results are shown in Table 2.
  • Example 2 The die bonding film of Example 2 and the dicing / die bonding integrated film were obtained in the same manner as in Example 1 except that the adhesive varnish B was used for producing the die bonding film.
  • the thermal conductivity and the T-shaped peel strength between the adhesive layer and the adhesive layer before and after irradiation with ultraviolet rays were measured in the same manner as in Example 1. .. The results are shown in Table 2.
  • Example 3 The die bonding film of Example 3 and the dicing / die bonding integrated film were obtained in the same manner as in Example 1 except that the adhesive varnish C was used for producing the die bonding film.
  • the thermal conductivity and the T-shaped peel strength between the adhesive layer and the adhesive layer before and after irradiation with ultraviolet rays were measured in the same manner as in Example 1. .. The results are shown in Table 2.
  • Example 4 The die bonding film of Example 4 and the dicing / die bonding integrated film were obtained in the same manner as in Example 1 except that the adhesive varnish D was used for producing the die bonding film.
  • the thermal conductivity and the T-shaped peel strength between the adhesive layer and the adhesive layer before and after irradiation with ultraviolet rays were measured in the same manner as in Example 1. .. The results are shown in Table 2.
  • Example 5 The die bonding film of Example 5 and the dicing / die bonding integrated film were obtained in the same manner as in Example 1 except that the adhesive varnish E was used for producing the die bonding film.
  • the thermal conductivity and the T-shaped peel strength between the adhesive layer and the adhesive layer before and after irradiation with ultraviolet rays were measured in the same manner as in Example 1. The results are shown in Table 2.
  • Example 6 The die bonding film of Example 6 and the dicing / die bonding integrated film were obtained in the same manner as in Example 1 except that the adhesive varnish F was used for producing the die bonding film.
  • the thermal conductivity and the T-shaped peel strength between the adhesive layer and the adhesive layer before and after irradiation with ultraviolet rays were measured in the same manner as in Example 1. .. The results are shown in Table 2.
  • Comparative Example 1 The die bonding film of Comparative Example 1 and the dicing / die bonding integrated film were obtained in the same manner as in Example 1 except that the adhesive varnish G was used for producing the die bonding film.
  • the thermal conductivity was measured in the same manner as in Example 1. The results are shown in Table 2. Since the thermal conductivity of the die bonding film of Comparative Example 1 was not sufficient, the dicing / die bonding integrated film of Comparative Example 1 had a T between the adhesive layer and the adhesive layer before and after irradiation with ultraviolet rays. The character peel strength was not measured. The results are shown in Table 2.
  • the dicing / die bonding integrated film of Examples 1 to 6 containing the flux agent has a higher thermal conductivity than the dicing / die bonding integrated film of Comparative Example 1 containing no flux agent. It was excellent. Further, it was found that the dicing / die bonding integrated film of Examples 5 and 6 containing benzylic acid can reduce the T-shaped peel strength after ultraviolet irradiation as compared with the T-shaped peel strength before ultraviolet irradiation. From these results, it was confirmed that the dicing / die bonding integrated film of the present disclosure has excellent heat dissipation.

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Abstract

Disclosed is an integrated dicing die-bonding film. Said integrated dicing die-bonding film comprises: dicing tape that has a substrate and an adhesive layer provided upon the substrate; and a die-bonding film that is disposed upon the adhesive layer of the dicing tape. The die-bonding film contains: silver-containing particles that each have an oxide layer on the surface thereof; and a fluxing agent. The silver-containing particle content is 75 mass% or more based on the total amount of the die-bonding film.

Description

ダイシング・ダイボンディング一体型フィルム、ダイボンディングフィルム、及び半導体装置の製造方法Method for manufacturing dicing / die bonding integrated film, die bonding film, and semiconductor device
　本開示は、ダイシング・ダイボンディング一体型フィルム、ダイボンディングフィルム、及び半導体装置の製造方法に関する。 This disclosure relates to a method for manufacturing a dicing / die bonding integrated film, a die bonding film, and a semiconductor device.
　従来、半導体装置は以下の工程を経て製造される。まず、ダイシング用粘着シートに半導体ウェハを貼り付け、その状態で半導体ウェハを半導体チップに個片化する（ダイシング工程）。その後、ピックアップ工程、圧着工程、及びダイボンディング工程等が実施される。特許文献１は、ダイシング工程において半導体ウェハを固定する機能と、ダイボンディング工程において半導体チップを基板と接着させる機能とを併せ持つ粘接着シート（ダイシングダイボンディングシート）を開示する。ダイシング工程において、半導体ウェハ及び接着剤層を個片化することによって、接着剤片付きチップが得られる。 Conventionally, semiconductor devices are manufactured through the following processes. First, the semiconductor wafer is attached to the adhesive sheet for dicing, and the semiconductor wafer is separated into semiconductor chips in that state (dicing step). After that, a pickup step, a crimping step, a die bonding step and the like are carried out. Patent Document 1 discloses a viscous adhesive sheet (dicing die bonding sheet) having both a function of fixing a semiconductor wafer in a dicing process and a function of adhering a semiconductor chip to a substrate in a dicing process. In the dicing step, the semiconductor wafer and the adhesive layer are separated into individual pieces to obtain a chip with an adhesive piece.
　近年、電力の制御等を行うパワー半導体装置と称されるデバイスが普及している。パワー半導体装置は供給される電流に起因して熱が発生し易く、優れた放熱性が求められる。特許文献２は、硬化前の放熱性より硬化後の放熱性が高い導電性フィルム状接着剤及びフィルム状接着剤付きダイシングテープを開示する。 In recent years, devices called power semiconductor devices that control electric power have become widespread. Power semiconductor devices tend to generate heat due to the supplied current, and are required to have excellent heat dissipation. Patent Document 2 discloses a conductive film-like adhesive and a dicing tape with a film-like adhesive, which have higher heat dissipation after curing than those before curing.
特開２００８－２１８５７１号公報Japanese Unexamined Patent Publication No. 2008-218571 特許第６３９６１８９号公報Japanese Patent No. 6396189
　しかしながら、従来のダイシング・ダイボンディング一体型フィルムは、放熱性が充分ではなく、未だ改善の余地がある。 However, the conventional dicing / die bonding integrated film does not have sufficient heat dissipation, and there is still room for improvement.
　そこで、本開示の一側面は、優れた放熱性を有するダイシング・ダイボンディング一体型フィルムを提供することを目的とする。 Therefore, one aspect of the present disclosure is to provide a dicing / die bonding integrated film having excellent heat dissipation.
　本発明者らが上記課題を解決すべく鋭意検討したところ、銀含有粒子が表面に酸化物層（酸化膜）を有していると、酸化物層（酸化膜）を有していないものに比べて、放熱性が不充分になる傾向にあることが見出された。本発明者らがさらに検討したところ、ダイボンディングフィルムにフラックス剤を含有させることによって、優れた放熱性を発現することを見出し、本開示の発明を完成するに至った。 As a result of diligent studies to solve the above problems, the present inventors have found that if the silver-containing particles have an oxide layer (oxide film) on the surface, the silver-containing particles do not have an oxide layer (oxide film). In comparison, it was found that the heat dissipation tends to be insufficient. As a result of further studies by the present inventors, they have found that the die bonding film contains a flux agent to exhibit excellent heat dissipation, and have completed the invention of the present disclosure.
　本開示の一側面は、ダイシング・ダイボンディング一体型フィルムに関する。当該ダイシング・ダイボンディング一体型フィルムは、表面に酸化物層（酸化膜）を有する銀含有粒子と、フラックス剤とを含有する。銀含有粒子の含有量は、ダイボンディングフィルムの全量を基準として、７５質量％以上である。このようなダイシング・ダイボンディング一体型フィルムによれば、優れた放熱性を有するものとなり得る。このような効果が奏する理由は必ずしも明らかではないが、例えば、フラックス剤が金属表面の酸化物層（酸化膜）を充分に還元除去し、さらにその状態が維持されることが考えられる。 One aspect of this disclosure relates to a dicing / die bonding integrated film. The dicing / die bonding integrated film contains silver-containing particles having an oxide layer (oxide film) on the surface and a flux agent. The content of the silver-containing particles is 75% by mass or more based on the total amount of the die bonding film. According to such a dicing / die bonding integrated film, it can have excellent heat dissipation. The reason why such an effect is exerted is not always clear, but it is conceivable that, for example, the flux agent sufficiently reduces and removes the oxide layer (oxide film) on the metal surface, and further maintains the state.
　フラックス剤は、芳香族カルボン酸であってよい。粘着層と接着剤層とを備えるダイシング・ダイボンディング一体型フィルムにおいて、粘着層と接着剤層との接着強度が充分に低減されないと、後続のピックアップ工程において、粘着層から接着剤片付きチップをピックアップできないという不具合が生じる場合がある。フラックス剤として、芳香族カルボン酸を用いることによって、紫外線照射後の粘着層と接着剤層との接着強度を充分に低減させることが可能となる。 The flux agent may be an aromatic carboxylic acid. In a dicing / die bonding integrated film having an adhesive layer and an adhesive layer, if the adhesive strength between the adhesive layer and the adhesive layer is not sufficiently reduced, a chip with an adhesive piece is picked up from the adhesive layer in a subsequent pickup step. There may be a problem that it cannot be done. By using an aromatic carboxylic acid as the flux agent, it is possible to sufficiently reduce the adhesive strength between the adhesive layer and the adhesive layer after irradiation with ultraviolet rays.
　ダイボンディングフィルムは、熱硬化性樹脂、硬化剤、及びエラストマーをさらに含有していてもよい。これらを含有するダイボンディングフィルムは、表面粗さ（Ｒａ）を調整し易い傾向にある。 The die bonding film may further contain a thermosetting resin, a curing agent, and an elastomer. The die bonding film containing these tends to easily adjust the surface roughness (Ra).
　熱硬化性樹脂は、２５℃で液状のエポキシ樹脂を含んでいてもよい。熱硬化性樹脂がこのようなエポキシ樹脂を含むことによって、表面粗さ（Ｒａ）が改善されたダイボンディングフィルムが得られ易い傾向にある。 The thermosetting resin may contain an epoxy resin that is liquid at 25 ° C. When the thermosetting resin contains such an epoxy resin, it tends to be easy to obtain a die bonding film having an improved surface roughness (Ra).
　本開示の他の一側面は、半導体装置の製造方法に関する。当該半導体装置の製造方法は、上記に記載のダイシング・ダイボンディング一体型フィルムのダイボンディングフィルムを半導体ウェハに貼り付ける工程と、半導体ウェハ及びダイボンディングフィルムを個片化する工程と、ダイシングテープからダイボンディングフィルム片が付着した半導体チップをピックアップする工程と、ダイボンディングフィルム片を介して、半導体チップを支持基板に接着する工程とを備える。当該半導体装置の製造方法は、半導体ウェハ及びダイボンディングフィルムを個片化する工程の後に、粘着層に対して、紫外線を照射する工程をさらに備えていてもよい。このような半導体装置の製造方法によれば、上記ダイシング・ダイボンディング一体型フィルムを用いることから、放熱性に優れる半導体装置を製造することが可能となる。 Another aspect of this disclosure relates to a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device includes a step of attaching the die bonding film of the dicing / die bonding integrated film described above to the semiconductor wafer, a step of separating the semiconductor wafer and the die bonding film into individual pieces, and a die from the dicing tape. A step of picking up the semiconductor chip to which the bonding film piece is attached and a step of adhering the semiconductor chip to the support substrate via the die bonding film piece are provided. The method for manufacturing the semiconductor device may further include a step of irradiating the adhesive layer with ultraviolet rays after the step of individualizing the semiconductor wafer and the die bonding film. According to such a method for manufacturing a semiconductor device, since the dicing / die bonding integrated film is used, it is possible to manufacture a semiconductor device having excellent heat dissipation.
　本開示の他の一側面は、ダイボンディングフィルムに関する。当該ダイボンディングフィルムは、表面に酸化物層を有する銀含有粒子と、フラックス剤とを含有する。銀含有粒子の含有量は、ダイボンディングフィルムの全量を基準として、７５質量％以上である。 Another aspect of this disclosure relates to die bonding films. The die bonding film contains silver-containing particles having an oxide layer on the surface and a flux agent. The content of the silver-containing particles is 75% by mass or more based on the total amount of the die bonding film.
　本開示によれば、優れた放熱性を有するダイシング・ダイボンディング一体型フィルムが開示される。いくつかの形態に係るダイシング・ダイボンディング一体型フィルムは、紫外線照射後の粘着層と接着剤層との接着強度を充分に低減させることが可能となる。また、本開示によれば、このようなダイシング・ダイボンディング一体型フィルムを用いた半導体装置の製造方法が提供される。さらに、本開示によれば、このようなダイシング・ダイボンディング一体型フィルムに好適に用いられるダイボンディングフィルムが提供される。 According to the present disclosure, a dicing / die bonding integrated film having excellent heat dissipation is disclosed. The dicing / die bonding integrated film according to some forms can sufficiently reduce the adhesive strength between the adhesive layer and the adhesive layer after irradiation with ultraviolet rays. Further, according to the present disclosure, there is provided a method for manufacturing a semiconductor device using such a dicing / die bonding integrated film. Further, according to the present disclosure, there is provided a dicing / die bonding integrated film suitable for use in such a dicing / die bonding integrated film.
図１は、ダイボンディングフィルムの一実施形態を示す模式断面図である。FIG. 1 is a schematic cross-sectional view showing an embodiment of a die bonding film. 図２は、ダイシング・ダイボンディング一体型フィルムの一実施形態を示す模式断面図である。FIG. 2 is a schematic cross-sectional view showing an embodiment of a dicing / die bonding integrated film. 図３は、半導体装置の製造方法の一実施形態を示す模式断面図である。図３（ａ）、（ｂ）、（ｃ）、（ｄ）、（ｅ）、及び（ｆ）は、各工程を模式的に示す断面図である。FIG. 3 is a schematic cross-sectional view showing an embodiment of a method for manufacturing a semiconductor device. 3 (a), (b), (c), (d), (e), and (f) are sectional views schematically showing each step. 図４は、半導体装置の一実施形態を示す模式断面図である。FIG. 4 is a schematic cross-sectional view showing an embodiment of a semiconductor device.
　以下、図面を適宜参照しながら、本開示の実施形態について説明する。ただし、本開示は以下の実施形態に限定されるものではない。以下の実施形態において、その構成要素（ステップ等も含む）は、特に明示した場合を除き、必須ではない。各図における構成要素の大きさは概念的なものであり、構成要素間の大きさの相対的な関係は各図に示されたものに限定されない。 Hereinafter, embodiments of the present disclosure will be described with reference to the drawings as appropriate. However, the present disclosure is not limited to the following embodiments. In the following embodiments, the components (including steps and the like) are not essential unless otherwise specified. The sizes of the components in each figure are conceptual, and the relative size relationships between the components are not limited to those shown in each figure.
　本明細書における数値及びその範囲についても同様であり、本開示を制限するものではない。本明細書において「～」を用いて示された数値範囲は、「～」の前後に記載される数値をそれぞれ最小値及び最大値として含む範囲を示す。本明細書中に段階的に記載されている数値範囲において、一つの数値範囲で記載された上限値又は下限値は、他の段階的な記載の数値範囲の上限値又は下限値に置き換えてもよい。また、本明細書中に記載されている数値範囲において、その数値範囲の上限値又は下限値は、実施例に示されている値に置き換えてもよい。 The same applies to the numerical values and their ranges in the present specification, and does not limit the disclosure. In the present specification, the numerical range indicated by using "-" indicates a range including the numerical values before and after "-" as the minimum value and the maximum value, respectively. In the numerical range described stepwise in the present specification, the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of another numerical range described stepwise. good. Further, in the numerical range described in the present specification, the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.
　本明細書において、（メタ）アクリレートは、アクリレート又はそれに対応するメタクリレートを意味する。（メタ）アクリロイル基、（メタ）アクリル共重合体等の他の類似表現についても同様である。 As used herein, (meth) acrylate means acrylate or the corresponding methacrylate. The same applies to other similar expressions such as (meth) acryloyl group and (meth) acrylic copolymer.
［ダイボンディングフィルム］
　図１は、ダイボンディングフィルムの一実施形態を示す模式断面図である。図１に示されるダイボンディングフィルム１０は、第１の表面１０Ａ及び第１の表面１０Ａと反対側の第２の表面１０Ｂを有する。第１の表面１０Ａは、後述のとおり、ダイシングテープの粘着層上に配置される表面であり得る。ダイボンディングフィルム１０は、図１に示すとおり、支持フィルム２０上に設けられていてもよい。ダイボンディングフィルム１０は、熱硬化性であり、半硬化（Ｂステージ）状態を経て、硬化処理後に完全硬化物（Ｃステージ）状態となり得る。 [Die bonding film]
FIG. 1 is a schematic cross-sectional view showing an embodiment of a die bonding film. The die bonding film 10 shown in FIG. 1 has a first surface 10A and a second surface 10B opposite to the first surface 10A. The first surface 10A may be a surface arranged on the adhesive layer of the dicing tape, as will be described later. As shown in FIG. 1, the die bonding film 10 may be provided on the support film 20. The die bonding film 10 is thermosetting and can be in a semi-cured (B stage) state and then in a completely cured product (C stage) state after a curing treatment.
　ダイボンディングフィルム１０は、（ａ）表面に酸化物層を有する銀含有粒子及び（ｂ）フラックス剤を含有し、必要に応じて、（ｃ）熱硬化性樹脂、（ｄ）硬化剤、及び（ｆ）エラストマーをさらに含有していてもよい。 The die bonding film 10 contains (a) silver-containing particles having an oxide layer on the surface and (b) a flux agent, and if necessary, (c) a thermosetting resin, (d) a curing agent, and ( f) It may further contain an elastomer.
（ａ）成分：表面に酸化物層を有する銀含有粒子
　（ａ）成分は、ダイボンディングフィルムにおける放熱性を高めるために用いられる成分である。銀含有粒子は、例えば、銀から構成される銀粒子又は金属粒子（銅粒子等）の表面を銀で被覆した銀被覆金属粒子（銀被覆銅粒子等）であってもよい。銀含有粒子は、銀から構成される銀粒子であってよい。 (A) Component: Silver-containing particles having an oxide layer on the surface The component (a) is a component used to enhance heat dissipation in a die bonding film. The silver-containing particles may be, for example, silver particles composed of silver or silver-coated metal particles (silver-coated copper particles or the like) whose surface is coated with silver. The silver-containing particles may be silver particles composed of silver.
　銀含有粒子における銀は、酸化され易い性質を有していることから、保護材等で表面処理されていない銀含有粒子は、通常、表面に酸化物層（酸化膜）を有する傾向にある。（ａ）成分は、表面に酸化物層（酸化膜）を有している銀含有粒子であれば特に制限されないが、入手のし易さ等の観点から、例えば、アトマイズ法によって製造された銀含有粒子であってよい。ここで、アトマイズ法とは、金属又は合金の溶湯をるつぼ底部の小孔から流出させて細流とし、これに高速の空気、窒素、アルゴン、水等を吹き付け、溶湯を飛散、急冷凝固として粉末（粒子）を得る方法である。得られた粉末は、凝集防止のため焼結されることから、空気中の酸素によって表面に酸化物層（酸化膜）が形成される傾向にある。このような銀含有粒子としては、例えば、Ａｇ－ＨＷＱシリーズ（商品名、福田金属箔粉工業株式会社製）、導電性アトマイズ粉（商品名、ＤＯＷＡエレクトロニクス株式会社製）等が挙げられる。 Since silver in silver-containing particles has a property of being easily oxidized, silver-containing particles that have not been surface-treated with a protective material or the like usually tend to have an oxide layer (oxide film) on the surface. The component (a) is not particularly limited as long as it is silver-containing particles having an oxide layer (oxide film) on the surface, but from the viewpoint of availability and the like, for example, silver produced by an atomizing method. It may be contained particles. Here, the atomizing method is a method in which a molten metal or alloy is made to flow out from a small hole at the bottom of a crucible to form a trickle, and high-speed air, nitrogen, argon, water, etc. are blown onto the molten metal to scatter the molten metal, resulting in powder (quenching solidification). It is a method of obtaining particles). Since the obtained powder is sintered to prevent aggregation, oxygen in the air tends to form an oxide layer (oxide film) on the surface. Examples of such silver-containing particles include Ag-HWQ series (trade name, manufactured by Fukuda Metal Foil Powder Industry Co., Ltd.), conductive atomized powder (trade name, manufactured by DOWA Electronics Co., Ltd.) and the like.
　（ａ）成分の平均粒径は、０．０１～１０μｍであってよい。（ａ）成分の平均粒径が０．０１μｍ以上であると、接着剤ワニスを作製したときの粘度上昇を防ぎ、所望の量の（ａ）成分をダイボンディングフィルムに含有させることができるとともに、ダイボンディングフィルムの被着体への濡れ性を確保してより良好な接着性を発揮させることができる傾向にある。（ａ）成分の平均粒径が１０μｍ以下であると、フィルム成形性により優れ、（ａ）成分の添加による放熱性をより向上させることができる傾向にある。また、このような範囲にすることによって、ダイボンディングフィルムの厚さをより薄くすることができ、さらに半導体チップを高積層化することができるとともに、ダイボンディングフィルムから導電性粒子が突き出すことによるチップクラックの発生を防止することができる傾向にある。（ａ）成分の平均粒径は、０．１μｍ以上、０．５μｍ以上、１．０μｍ以上、又は１．５μｍ以上であってもよく、８．０μｍ以下、７．０μｍ以下、６．０μｍ以下、５．０μｍ以下、４．０μｍ以下、又は３．０μｍ以下であってもよい。（ａ）成分の平均粒径が５．０μｍ以下であると、表面粗さ（Ｒａ）が改善されたダイボンディングフィルムが得られ易い傾向にある。なお、（ａ）成分の平均粒径は、（ａ）成分全体の体積に対する比率（体積分率）が５０％のときの粒径（Ｄ５０）を意味する。（ａ）成分の平均粒径（Ｄ５０）は、レーザー散乱型粒径測定装置（例えば、マイクロトラック）を用いて、水中に（ａ）成分を懸濁させた懸濁液をレーザー散乱法によって測定することによって求めることができる。 The average particle size of the component (a) may be 0.01 to 10 μm. When the average particle size of the component (a) is 0.01 μm or more, it is possible to prevent an increase in viscosity when the adhesive varnish is produced, and a desired amount of the component (a) can be contained in the die bonding film. There is a tendency to ensure the wettability of the die bonding film to the adherend and to exhibit better adhesiveness. When the average particle size of the component (a) is 10 μm or less, the film formability is more excellent, and the heat dissipation property due to the addition of the component (a) tends to be further improved. Further, by setting the range in such a range, the thickness of the die bonding film can be further reduced, the semiconductor chips can be highly laminated, and the chips are formed by the conductive particles protruding from the die bonding film. There is a tendency to prevent the occurrence of cracks. The average particle size of the component (a) may be 0.1 μm or more, 0.5 μm or more, 1.0 μm or more, or 1.5 μm or more, 8.0 μm or less, 7.0 μm or less, 6.0 μm or less. , 5.0 μm or less, 4.0 μm or less, or 3.0 μm or less. When the average particle size of the component (a) is 5.0 μm or less, it tends to be easy to obtain a die bonding film having an improved surface roughness (Ra). The average particle size of the component (a) means the particle size (D 50 ) when the ratio (volume fraction) to the volume of the entire component (a) is 50%. For the average particle size (D 50 ) of the component (a), a suspension in which the component (a) is suspended in water is subjected to a laser scattering method using a laser scattering type particle size measuring device (for example, Microtrac). It can be determined by measuring.
　（ａ）成分は、球状粒子であり、かつその平均粒径が５．０μｍ以下であることが好ましい。 It is preferable that the component (a) is spherical particles and the average particle size thereof is 5.0 μm or less.
　（ａ）成分の含有量は、ダイボンディングフィルムの全量を基準として、７５質量％以上である。（ａ）成分の含有量が、ダイボンディングフィルムの全量を基準として、７５質量％以上であると、ダイボンディングフィルムの熱伝導率を向上させることができ、結果として、放熱性を向上させることができる。（ａ）成分の含有量は、ダイボンディングフィルムの全量を基準として、７７質量％以上、８０質量％以上、８３質量％以上、又は８５質量％以上であってもよい。（ａ）成分の含有量の上限は、特に制限されないが、ダイボンディングフィルムの全量を基準として、９８質量％以下、９６質量％以下、又は９５質量％以下であってよい。 The content of the component (a) is 75% by mass or more based on the total amount of the die bonding film. When the content of the component (a) is 75% by mass or more based on the total amount of the die bonding film, the thermal conductivity of the die bonding film can be improved, and as a result, the heat dissipation can be improved. can. The content of the component (a) may be 77% by mass or more, 80% by mass or more, 83% by mass or more, or 85% by mass or more based on the total amount of the die bonding film. The upper limit of the content of the component (a) is not particularly limited, but may be 98% by mass or less, 96% by mass or less, or 95% by mass or less based on the total amount of the die bonding film.
（ｂ）フラックス剤
　（ｂ）成分は、（ａ）成分における酸化物層（酸化膜）を還元除去するための成分である。（ｂ）成分は、例えば、カルボキシ基を有する化合物（カルボン酸）であってよい。このような（ｂ）成分としては、例えば、脂肪族カルボン酸、芳香族カルボン酸等が挙げられる。これらは、１種を単独で又は２種以上を組み合わせて用いてもよい。（ｂ）成分は、２５℃で固体状のものであってよい。 (B) Flux agent The component (b) is a component for reducing and removing the oxide layer (oxide film) in the component (a). The component (b) may be, for example, a compound having a carboxy group (carboxylic acid). Examples of such the component (b) include aliphatic carboxylic acids and aromatic carboxylic acids. These may be used individually by 1 type or in combination of 2 or more type. The component (b) may be solid at 25 ° C.
　脂肪族カルボン酸としては、例えば、コハク酸（融点：１８４℃）、グルタル酸（融点：９５～９８℃）、アジピン酸（融点：１５２℃）、ピメリン酸（融点：１０３～１０５℃）、スベリン酸（融点：１４１～１４４℃）、アゼライン酸（融点：１０９℃）、セバシン酸（融点：１３３～１３７℃）、ウンデカン二酸（融点：２８～３１℃）、ドデカン二酸（融点：１２７～１２９℃）等が挙げられる。脂肪族カルボン酸は、例えば、グルタル酸であってよい。 Examples of the aliphatic carboxylic acid include succinic acid (melting point: 184 ° C.), glutaric acid (melting point: 95 to 98 ° C.), adipic acid (melting point: 152 ° C.), pimelic acid (melting point: 103 to 105 ° C.), and sverin. Acid (melting point: 141-144 ° C), azelaic acid (melting point: 109 ° C), sebacic acid (melting point: 133-137 ° C), undecanedioic acid (melting point: 28-31 ° C), dodecanedioic acid (melting point: 127-) 129 ° C.) and the like. The aliphatic carboxylic acid may be, for example, glutaric acid.
　芳香族カルボン酸としては、例えば、ジフェニル酢酸（融点：１４７～１４９℃）、ベンジル酸（融点：１５０～１５２℃）、４，４－ビス（４－ヒドロキシフェニル）吉草酸（融点：１４７～１７７℃）、２，５－ジヒドロキシ安息香酸（融点：２００～２０５℃）、３，４，５－トリヒドロキシ安息香酸（融点：２５０℃）、１，２，４－ベンゼントリカルボン酸（融点：２３１℃）、１，３，５－ベンゼントリカルボン酸（融点：＞３００℃）、２－［ビス（４－ヒドロキシフェニル）メチル］安息香酸（融点：１２６℃）等が挙げられる。芳香族カルボン酸は、例えば、ベンジル酸であってよい。 Examples of the aromatic carboxylic acid include diphenylacetic acid (melting point: 147 to 149 ° C.), benzylic acid (melting point: 150 to 152 ° C.), and 4,4-bis (4-hydroxyphenyl) valeric acid (melting point: 147 to 177 ° C.). ℃), 2,5-dihydroxybenzoic acid (melting point: 200-205 ℃), 3,4,5-trihydroxybenzoic acid (melting point: 250 ℃), 1,2,4-benzenetricarboxylic acid (melting point: 231 ℃) ), 1,3,5-benzenetricarboxylic acid (melting point:> 300 ° C.), 2- [bis (4-hydroxyphenyl) methyl] benzoic acid (melting point: 126 ° C.) and the like. The aromatic carboxylic acid may be, for example, benzylic acid.
　（ｂ）成分は、紫外線照射後の粘着層と接着剤層との接着強度を充分に低減させる観点から、以下の条件を１以上満たすカルボキシ基を有する化合物（カルボン酸）であってもよい。
・（ｂ）成分は、芳香族カルボン酸である。
・（ｂ）成分の融点は、１００℃以上、好ましくは１２０℃以上、より好ましくは１４０℃以上であり、２００℃以下、好ましくは１８０℃以下、より好ましくは１６０℃以下である。
・（ｂ）成分は、水酸基を有するカルボン酸である。 The component (b) may be a compound (carboxylic acid) having a carboxy group that satisfies one or more of the following conditions from the viewpoint of sufficiently reducing the adhesive strength between the adhesive layer and the adhesive layer after irradiation with ultraviolet rays.
-The component (b) is an aromatic carboxylic acid.
The melting point of the component (b) is 100 ° C. or higher, preferably 120 ° C. or higher, more preferably 140 ° C. or higher, 200 ° C. or lower, preferably 180 ° C. or lower, and more preferably 160 ° C. or lower.
-The component (b) is a carboxylic acid having a hydroxyl group.
　（ｂ）成分は、例えば、グルタル酸又はベンジル酸であってよく、ベンジル酸であってもよい。 The component (b) may be, for example, glutaric acid or benzylic acid, or may be benzylic acid.
　（ｂ）成分の含有量は、ダイボンディングフィルムの全量を基準として、０．１～１５質量％であってよい。（ｂ）成分の含有量が、ダイボンディングフィルムの全量を基準として、０．１質量％以上であると、（ａ）成分における酸化物層を充分に還元除去することができ、放熱性を向上させることができる傾向にある。（ｂ）成分の含有量が、ダイボンディングフィルムの全量を基準として、１５質量％以下であると、他の成分（特に、（ｃ）成分、（ｄ）成分、及び（ｅ）成分）の量を充分に確保でき、ダイボンディングフィルムの被着体を確保できるとともに、フィルム形成性に優れる傾向にある。（ｂ）成分の含有量は、ダイボンディングフィルムの全量を基準として、０．２質量％以上、０．５質量％以上、０．８質量％以上、１質量％以上、１．２質量％以上、又は１．５質量％以上であってもよく、１２質量％以下、１０質量％以下、８質量％以下、又は６質量％以下であってもよい。 The content of the component (b) may be 0.1 to 15% by mass based on the total amount of the die bonding film. When the content of the component (b) is 0.1% by mass or more based on the total amount of the die bonding film, the oxide layer in the component (a) can be sufficiently reduced and removed, and the heat dissipation is improved. There is a tendency to be able to. When the content of the component (b) is 15% by mass or less based on the total amount of the die bonding film, the amount of other components (particularly, the component (c), the component (d), and the component (e)). Can be sufficiently secured, an adherend of the die bonding film can be secured, and the film formability tends to be excellent. The content of the component (b) is 0.2% by mass or more, 0.5% by mass or more, 0.8% by mass or more, 1% by mass or more, and 1.2% by mass or more based on the total amount of the die bonding film. , Or 1.5% by mass or more, and may be 12% by mass or less, 10% by mass or less, 8% by mass or less, or 6% by mass or less.
（ｃ）成分：熱硬化性樹脂
　（ｃ）成分は、加熱等によって、分子間で三次元的な結合を形成し硬化する性質を有する成分であり、硬化後に接着作用を示す成分である。（ｃ）成分は、エポキシ樹脂であってよい。（ｃ）成分は、２５℃で液状のエポキシ樹脂を含んでいてもよい。エポキシ樹脂は、分子内にエポキシ基を有するものであれば、特に制限なく用いることができる。エポキシ樹脂は、分子内に２以上のエポキシ基を有しているものであってよい。 Component (c): Thermosetting resin The component (c) is a component having a property of forming a three-dimensional bond between molecules and being cured by heating or the like, and is a component exhibiting an adhesive action after curing. The component (c) may be an epoxy resin. The component (c) may contain an epoxy resin liquid at 25 ° C. The epoxy resin can be used without particular limitation as long as it has an epoxy group in the molecule. The epoxy resin may have two or more epoxy groups in the molecule.
　エポキシ樹脂としては、例えば、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ビスフェノールＳ型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビスフェノールＡノボラック型エポキシ樹脂、ビスフェノールＦノボラック型エポキシ樹脂、スチルベン型エポキシ樹脂、トリアジン骨格含有エポキシ樹脂、フルオレン骨格含有エポキシ樹脂、トリフェノールメタン型エポキシ樹脂、ビフェニル型エポキシ樹脂、キシリレン型エポキシ樹脂、ビフェニルアラルキル型エポキシ樹脂、ナフタレン型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、多官能フェノール類、アントラセン等の多環芳香族類のジグリシジルエーテル化合物などが挙げられる。これらは、１種を単独で又は２種以上を組み合わせて用いてもよい。これらの中でも、エポキシ樹脂は、硬化物の耐熱性等の観点から、ビスフェノール型エポキシ樹脂又はクレゾールノボラック型エポキシ樹脂であってよい。 Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolak type epoxy resin, bisphenol A novolak type epoxy resin, and bisphenol F novolak type epoxy resin. , Stilben type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenolmethane type epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, biphenyl aralkyl type epoxy resin, naphthalene type epoxy resin, dicyclopentadiene type Examples thereof include epoxy resins, polyfunctional phenols, polycyclic aromatic diglycidyl ether compounds such as anthracene, and the like. These may be used individually by 1 type or in combination of 2 or more type. Among these, the epoxy resin may be a bisphenol type epoxy resin or a cresol novolac type epoxy resin from the viewpoint of heat resistance of the cured product and the like.
　エポキシ樹脂は、２５℃で液状のエポキシ樹脂を含んでいてもよい。このようなエポキシ樹脂を含むことによって、表面粗さ（Ｒａ）が改善されたダイボンディングフィルムが得られ易い傾向にある。２５℃で液状のエポキシ樹脂の市販品としては、例えば、ＥＸＡ－８３０ＣＲＰ（商品名、ＤＩＣ株式会社製）、ＹＤＦ－８１７０Ｃ（商品名、日鉄ケミカル＆マテリアル株式会社）等が挙げられる。 The epoxy resin may contain an epoxy resin that is liquid at 25 ° C. By including such an epoxy resin, it tends to be easy to obtain a die bonding film having an improved surface roughness (Ra). Examples of commercially available products of epoxy resins liquid at 25 ° C. include EXA-830CRP (trade name, manufactured by DIC Corporation), YDF-8170C (trade name, manufactured by Nittetsu Chemical & Materials Co., Ltd.) and the like.
　エポキシ樹脂のエポキシ当量は、特に制限されないが、９０～３００ｇ／ｅｑ又は１１０～２９０ｇ／ｅｑであってよい。エポキシ樹脂のエポキシ当量がこのような範囲にあると、ダイボンディングフィルムのバルク強度を維持しつつ、ダイボンディングフィルムを形成する際の接着剤組成物の流動性を確保し易い傾向にある。 The epoxy equivalent of the epoxy resin is not particularly limited, but may be 90 to 300 g / eq or 110 to 290 g / eq. When the epoxy equivalent of the epoxy resin is in such a range, it tends to be easy to secure the fluidity of the adhesive composition when forming the die bonding film while maintaining the bulk strength of the die bonding film.
　（ｃ）成分の含有量は、ダイボンディングフィルムの全量を基準として、０．１質量％以上、０．５質量％以上、１質量％以上、又は１．５質量％以上であってよく、１５質量％以下、１２質量％以下、１０質量％以下、８質量％以下、又は６質量％以下であってよい。 The content of the component (c) may be 0.1% by mass or more, 0.5% by mass or more, 1% by mass or more, or 1.5% by mass or more, based on the total amount of the die bonding film. It may be 1% by mass or less, 12% by mass or less, 10% by mass or less, 8% by mass or less, or 6% by mass or less.
　（ｃ）成分が２５℃で液状のエポキシ樹脂を含む場合、（ｃ）成分に対する当該エポキシ樹脂の質量比（当該エポキシ樹脂の質量／（ｃ）成分の全質量）は、百分率で、１０～１００％、４０～１００％、６０％～１００％、又は８０％～１００％であってよい。（ｃ）成分が２５℃で液状のエポキシ樹脂を含む場合、当該エポキシ樹脂の含有量は、ダイボンディングフィルムの全量を基準として、０．１質量％以上、０．５質量％以上、１質量％以上、又は１．５質量％以上であってよく、１５質量％以下、１２質量％以下、１０質量％以下、８質量％以下、又は６質量％以下であってよい。 When the component (c) contains a liquid epoxy resin at 25 ° C., the mass ratio of the epoxy resin to the component (c) (mass of the epoxy resin / total mass of the component (c)) is 10 to 100 as a percentage. %, 40-100%, 60% -100%, or 80% -100%. (C) When the component contains an epoxy resin liquid at 25 ° C., the content of the epoxy resin is 0.1% by mass or more, 0.5% by mass or more, and 1% by mass based on the total amount of the die bonding film. It may be more than or equal to 1.5% by mass, and may be 15% by mass or less, 12% by mass or less, 10% by mass or less, 8% by mass or less, or 6% by mass or less.
（ｄ）成分：硬化剤
　（ｄ）成分は、エポキシ樹脂の硬化剤となり得るフェノール樹脂であってよい。フェノール樹脂は、分子内にフェノール性水酸基を有するものであれば特に制限なく用いることができる。フェノール樹脂としては、例えば、フェノール、クレゾール、レゾルシン、カテコール、ビスフェノールＡ、ビスフェノールＦ、フェニルフェノール、アミノフェノール等のフェノール類及び／又はα－ナフトール、β－ナフトール、ジヒドロキシナフタレン等のナフトール類とホルムアルデヒド等のアルデヒド基を有する化合物とを酸性触媒下で縮合又は共縮合させて得られるノボラック型フェノール樹脂、アリル化ビスフェノールＡ、アリル化ビスフェノールＦ、アリル化ナフタレンジオール、フェノールノボラック、フェノール等のフェノール類及び／又はナフトール類とジメトキシパラキシレン又はビス（メトキシメチル）ビフェニルから合成されるフェノールアラルキル樹脂、ナフトールアラルキル樹脂、ビフェニルアラルキル型フェノール樹脂、フェニルアラルキル型フェノール樹脂などが挙げられる。これらは、１種を単独で又は２種以上を組み合わせて用いてもよい。 Component (d): Curing agent The component (d) may be a phenol resin that can be a curing agent for an epoxy resin. The phenol resin can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule. Examples of the phenol resin include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol, and / or naphthols such as α-naphthol, β-naphthol and dihydroxynaphthalene, and formaldehyde and the like. Phenols such as novolak type phenol resin, allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolac, phenol and / Alternatively, examples thereof include phenol aralkyl resin synthesized from naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl, naphthol aralkyl resin, biphenyl aralkyl type phenol resin, phenyl aralkyl type phenol resin and the like. These may be used individually by 1 type or in combination of 2 or more type.
　フェノール樹脂の水酸基当量は、４０～３００ｇ／ｅｑ、７０～２９０ｇ／ｅｑ、又は１００～２８０ｇ／ｅｑであってよい。フェノール樹脂の水酸基当量が４０ｇ／ｅｑ以上であると、フィルムの貯蔵弾性率がより向上する傾向にあり、３００ｇ／ｅｑ以下であると、発泡、アウトガス等の発生による不具合を防ぐことが可能となる。 The hydroxyl group equivalent of the phenol resin may be 40 to 300 g / eq, 70 to 290 g / eq, or 100 to 280 g / eq. When the hydroxyl group equivalent of the phenol resin is 40 g / eq or more, the storage elastic modulus of the film tends to be further improved, and when it is 300 g / eq or less, it is possible to prevent problems due to the generation of foaming, outgas and the like. ..
　（ｃ）成分であるエポキシ樹脂のエポキシ当量と（ｄ）成分であるフェノール樹脂の水酸基当量との比（（ｃ）成分であるエポキシ樹脂のエポキシ当量／（ｄ）成分であるフェノール樹脂の水酸基当量）は、硬化性の観点から、０．３０／０．７０～０．７０／０．３０、０．３５／０．６５～０．６５／０．３５、０．４０／０．６０～０．６０／０．４０、又は０．４５／０．５５～０．５５／０．４５であってよい。当該当量比が０．３０／０．７０以上であると、より充分な硬化性が得られる傾向にある。当該当量比が０．７０／０．３０以下であると、粘度が高くなり過ぎることを防ぐことができ、より充分な流動性を得ることができる。 The ratio of the epoxy equivalent of the epoxy resin as the component (c) to the hydroxyl equivalent of the phenol resin as the component (c) / the epoxy equivalent of the epoxy resin as the component / the hydroxyl equivalent of the phenol resin as the component (d). ) Are 0.30 / 0.70 to 0.70 / 0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0 from the viewpoint of curability. It may be .60 / 0.40, or 0.45 / 0.55 to 0.55 / 0.45. When the equivalent amount ratio is 0.30 / 0.70 or more, more sufficient curability tends to be obtained. When the equivalent equivalent ratio is 0.70 / 0.30 or less, it is possible to prevent the viscosity from becoming too high, and it is possible to obtain more sufficient fluidity.
　（ｄ）成分の含有量は、ダイボンディングフィルムの全量を基準として、０．１質量％以上、０．３質量％以上、０．５質量％以上、又は１質量％以上であってよく、１２質量％以下、１０質量％以下、８質量％以下、６質量％以下、又は４質量％以下であってよい。 The content of the component (d) may be 0.1% by mass or more, 0.3% by mass or more, 0.5% by mass or more, or 1% by mass or more, based on the total amount of the die bonding film. It may be 10% by mass or less, 8% by mass or less, 6% by mass or less, or 4% by mass or less.
（ｅ）成分：エラストマー
　（ｅ）成分としては、例えば、ポリイミド樹脂、アクリル樹脂、ウレタン樹脂、ポリフェニレンエーテル樹脂、ポリエーテルイミド樹脂、フェノキシ樹脂、変性ポリフェニレンエーテル樹脂等が挙げられる。（ｅ）成分は、これらの樹脂であって、架橋性官能基を有する樹脂であってよく、架橋性官能基を有するアクリル樹脂であってよい。ここで、アクリル樹脂とは、（メタ）アクリル酸エステルに由来する構成単位を含むポリマーを意味する。アクリル樹脂は、構成単位として、エポキシ基、アルコール性又はフェノール性水酸基、カルボキシ基等の架橋性官能基を有する（メタ）アクリル酸エステルに由来する構成単位を含むポリマーであってよい。また、アクリル樹脂は、（メタ）アクリル酸エステルとアクリルニトリルとの共重合体等のアクリルゴムであってもよい。これらは、１種を単独で又は２種以上を組み合わせて用いてもよい。 Component (e): Elastomer Examples of the component (e) include polyimide resin, acrylic resin, urethane resin, polyphenylene ether resin, polyetherimide resin, phenoxy resin, modified polyphenylene ether resin and the like. The component (e) may be these resins, a resin having a crosslinkable functional group, or an acrylic resin having a crosslinkable functional group. Here, the acrylic resin means a polymer containing a structural unit derived from a (meth) acrylic acid ester. The acrylic resin may be a polymer containing a structural unit derived from a (meth) acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxy group as a structural unit. Further, the acrylic resin may be acrylic rubber such as a copolymer of (meth) acrylic acid ester and acrylic nitrile. These may be used individually by 1 type or in combination of 2 or more type.
　アクリル樹脂の市販品としては、例えば、ＳＧ－７０Ｌ、ＳＧ－７０８－６、ＷＳ－０２３　ＥＫ３０、ＳＧ－２８０　ＥＫ２３、ＨＴＲ－８６０Ｐ－３、ＨＴＲ－８６０Ｐ－３ＣＳＰ、ＨＴＲ－８６０Ｐ－３ＣＳＰ－３ＤＢ（いずれもナガセケムテックス株式会社製）等が挙げられる。 Examples of commercially available acrylic resins include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, HTR-860P-3, HTR-860P-3CSP, and HTR-860P-3CSP-3DB ( All of them are manufactured by Nagase Chemtex Co., Ltd.).
　（ｅ）成分のガラス転移温度（Ｔｇ）は、－５０～５０℃又は－３０～２０℃であってよい。アクリル樹脂のＴｇが－５０℃以上であると、ダイボンディングフィルムのタック性が低くなるため取り扱い性がより向上する傾向にある。アクリル樹脂のＴｇが５０℃以下であると、ダイボンディングフィルムを形成する際の接着剤組成物の流動性をより充分に確保できる傾向にある。ここで、（ｅ）成分のガラス転移温度（Ｔｇ）は、ＤＳＣ（熱示差走査熱量計）（例えば、株式会社リガク製、商品名：Ｔｈｅｒｍｏ　Ｐｌｕｓ　２）を用いて測定した値を意味する。 The glass transition temperature (Tg) of the component (e) may be −50 to 50 ° C. or −30 to 20 ° C. When the Tg of the acrylic resin is −50 ° C. or higher, the tackiness of the die bonding film is lowered, so that the handleability tends to be further improved. When the Tg of the acrylic resin is 50 ° C. or lower, the fluidity of the adhesive composition when forming the die bonding film tends to be more sufficiently secured. Here, the glass transition temperature (Tg) of the component (e) means a value measured using a DSC (heat differential scanning calorimeter) (for example, manufactured by Rigaku Co., Ltd., trade name: Thermo Plus 2).
　（ｅ）成分の重量平均分子量（Ｍｗ）は、５万～１６０万、１０万～１４０万、又は３０万～１２０万であってよい。（ｅ）成分の重量平均分子量が５万以上であると、成膜性により優れる傾向にある。（ｅ）成分の重量平均分子量が１６０万以下であると、ダイボンディングフィルムを形成する際の接着剤組成物の流動性により優れる傾向にある。なお、重量平均分子量（Ｍｗ）は、ゲルパーミエーションクロマトグラフィー（ＧＰＣ）で測定し、標準ポリスチレンによる検量線を用いて換算した値である。 The weight average molecular weight (Mw) of the component (e) may be 50,000 to 1.6 million, 100,000 to 1.4 million, or 300,000 to 1.2 million. When the weight average molecular weight of the component (e) is 50,000 or more, the film forming property tends to be better. When the weight average molecular weight of the component (e) is 1.6 million or less, the fluidity of the adhesive composition when forming the die bonding film tends to be superior. The weight average molecular weight (Mw) is a value measured by gel permeation chromatography (GPC) and converted using a calibration curve made of standard polystyrene.
　（ｅ）成分の重量平均分子量（Ｍｗ）の測定装置、測定条件等は、例えば、以下のとおりである。
　ポンプ：Ｌ－６０００（株式会社日立製作所製）
　カラム：ゲルパック（Ｇｅｌｐａｃｋ）ＧＬ－Ｒ４４０（日立化成株式会社製）、ゲルパック（Ｇｅｌｐａｃｋ）ＧＬ－Ｒ４５０（日立化成株式会社製）、及びゲルパックＧＬ－Ｒ４００Ｍ（日立化成株式会社製）（各１０．７ｍｍ（直径）×３００ｍｍ）をこの順に連結したカラム
　溶離液：テトラヒドロフラン（以下、「ＴＨＦ」という。）
　サンプル：試料１２０ｍｇをＴＨＦ５ｍＬに溶解させた溶液
　流速：１．７５ｍＬ／分 (E) The measuring device for the weight average molecular weight (Mw) of the component, the measuring conditions, and the like are as follows, for example.
Pump: L-6000 (manufactured by Hitachi, Ltd.)
Columns: Gelpack GL-R440 (manufactured by Hitachi Kasei Co., Ltd.), Gelpack GL-R450 (manufactured by Hitachi Kasei Co., Ltd.), and Gelpack GL-R400M (manufactured by Hitachi Kasei Co., Ltd.) (10.7 mm each) Column eluent (hereinafter referred to as "THF") in which (diameter) x 300 mm) are connected in this order.
Sample: Solution of 120 mg of sample dissolved in 5 mL of THF Flow rate: 1.75 mL / min
　（ｅ）成分の含有量は、ダイボンディングフィルムの全量を基準として、０．１質量％以上、０．３質量％以上、０．５質量％以上、又は０．８質量％以上であってよく、１０質量％以下、８質量％以下、５質量％以下、又は３質量％以下であってよい。 The content of the component (e) may be 0.1% by mass or more, 0.3% by mass or more, 0.5% by mass or more, or 0.8% by mass or more based on the total amount of the die bonding film. It may be 10% by mass or less, 8% by mass or less, 5% by mass or less, or 3% by mass or less.
　ダイボンディングフィルム１０は、（ｆ）硬化促進剤をさらに含有していてもよい。 The die bonding film 10 may further contain (f) a curing accelerator.
（ｆ）成分：硬化促進剤
　ダイボンディングフィルムが（ｆ）成分を含有することによって、接着性と接続信頼性とをより両立することができる傾向にある。（ｆ）成分としては、例えば、イミダゾール類及びその誘導体、有機リン系化合物、第二級アミン類、第三級アミン類、第四級アンモニウム塩等が挙げられる。これらは、１種を単独で又は２種以上を組み合わせて用いてもよい。これらの中でも、（ｆ）成分は、反応性の観点から、イミダゾール類及びその誘導体であってよい。 Component (f): Curing accelerator By containing the component (f) in the die bonding film, the adhesiveness and the connection reliability tend to be more compatible. Examples of the component (f) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts and the like. These may be used individually by 1 type or in combination of 2 or more type. Among these, the component (f) may be imidazoles and derivatives thereof from the viewpoint of reactivity.
　イミダゾール類としては、例えば、２－メチルイミダゾール、１－ベンジル－２－メチルイミダゾール、１－シアノエチル－２－フェニルイミダゾール、１－シアノエチル－２－メチルイミダゾール等が挙げられる。これらは、１種を単独で又は２種以上を組み合わせて用いてもよい。 Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. These may be used individually by 1 type or in combination of 2 or more type.
　（ｆ）成分の含有量は、ダイボンディングフィルム全量を基準として、０．００１～１質量％であってよい。（ｆ）成分の含有量がこのような範囲にあると、接着性と接続信頼性とをより両立することができる傾向にある。 The content of the component (f) may be 0.001 to 1% by mass based on the total amount of the die bonding film. When the content of the component (f) is in such a range, the adhesiveness and the connection reliability tend to be more compatible.
　ダイボンディングフィルム１０は、（ａ）成分～（ｆ）成分以外のその他の成分として、カップリング剤、抗酸化剤、レオロジーコントロール剤、レベリング剤等をさらに含有していてもよい。カップリング剤としては、例えば、γ－ウレイドプロピルトリエトキシシラン、γ－メルカプトプロピルトリメトキシシラン、３－フェニルアミノプロピルトリメトキシシラン、３－（２－アミノエチル）アミノプロピルトリメトキシシラン等が挙げられる。その他の成分の含有量は、ダイボンディングフィルム全量を基準として、０．０１～３質量％であってよい。 The die bonding film 10 may further contain a coupling agent, an antioxidant, a rheology control agent, a leveling agent and the like as other components other than the components (a) to (f). Examples of the coupling agent include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3- (2-aminoethyl) aminopropyltrimethoxysilane, and the like. .. The content of other components may be 0.01 to 3% by mass based on the total amount of the die bonding film.
　図１に示すダイボンディングフィルム１０は、上記の（ａ）成分及び（ｂ）成分、必要に応じて、（ｃ）成分～（ｆ）成分及びその他の成分を含有する接着剤組成物をフィルム状に形成することによって作製することができる。このようなダイボンディングフィルム１０は、接着剤組成物を支持フィルム２０に塗布することによって形成することができる。接着剤組成物は、溶剤で希釈された接着剤ワニスとして用いることができる。接着剤ワニスを用いる場合は、接着剤ワニスを支持フィルム２０に塗布し、溶剤を加熱乾燥して除去することによってダイボンディングフィルム１０を形成することができる。 The die bonding film 10 shown in FIG. 1 is a film-like adhesive composition containing the above-mentioned components (a) and (b), and if necessary, components (c) to (f) and other components. It can be produced by forming in. Such a die bonding film 10 can be formed by applying an adhesive composition to the support film 20. The adhesive composition can be used as a solvent-diluted adhesive varnish. When an adhesive varnish is used, the die bonding film 10 can be formed by applying the adhesive varnish to the support film 20 and heating and drying the solvent to remove it.
　溶剤は、（ａ）成分以外の成分を溶解できるものであれば特に制限されない。溶剤としては、例えば、トルエン、キシレン、メシチレン、クメン、ｐ－シメン等の芳香族炭化水素；ヘキサン、ヘプタン等の脂肪族炭化水素；メチルシクロヘキサンなどの環状アルカン；テトラヒドロフラン、１，４－ジオキサン等の環状エーテル；アセトン、メチルエチルケトン、メチルイソブチルケトン、シクロヘキサノン、４－ヒドロキシ－４－メチル－２－ペンタノン等のケトン；酢酸メチル、酢酸エチル、酢酸ブチル、乳酸メチル、乳酸エチル、γ－ブチロラクトン等のエステル；エチレンカーボネート、プロピレンカーボネート等の炭酸エステル；Ｎ，Ｎ－ジメチルホルムアミド、Ｎ，Ｎ－ジメチルアセトアミド、Ｎ－メチル－２－ピロリドン等のアミドなどが挙げられる。これらは、１種を単独で又は２種以上を組み合わせて用いてもよい。これらのうち、溶剤は、溶解性及び沸点の観点から、トルエン、キシレン、メチルエチルケトン、メチルイソブチルケトン、又はシクロヘキサノンであってもよい。接着剤ワニス中の固形成分濃度は、接着剤ワニスの全質量を基準として、１０～８０質量％であってよい。 The solvent is not particularly limited as long as it can dissolve components other than the component (a). Examples of the solvent include aromatic hydrocarbons such as toluene, xylene, mesityrene, cumene, and p-simene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; tetrahydrofuran, 1,4-dioxane and the like. Cyclic ethers; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, γ-butyrolactone; Carbonated esters such as ethylene carbonate and propylene carbonate; amides such as N, N-dimethylformamide, N, N-dimethylacetamide and N-methyl-2-pyrrolidone can be mentioned. These may be used individually by 1 type or in combination of 2 or more type. Of these, the solvent may be toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, or cyclohexanone from the viewpoint of solubility and boiling point. The concentration of the solid component in the adhesive varnish may be 10 to 80% by mass based on the total mass of the adhesive varnish.
　接着剤ワニスは、（ａ）成分～（ｆ）成分、その他の成分、及び溶剤を、混合、混練することによって調製することができる。なお、各成分の混合、混練の順序は特に制限されず、適宜設定することができる。混合及び混練は、通常の撹拌機、らいかい機、三本ロール、ボールミル、ビーズミル等の分散機を適宜、組み合わせて行うことができる。接着剤ワニスを調製した後、真空脱気等によってワニス中の気泡を除去してもよい。 The adhesive varnish can be prepared by mixing and kneading the components (a) to (f), other components, and a solvent. The order of mixing and kneading of each component is not particularly limited and can be set as appropriate. Mixing and kneading can be performed by appropriately combining a disperser such as a normal stirrer, a raft machine, a triple roll, a ball mill, and a bead mill. After preparing the adhesive varnish, air bubbles in the varnish may be removed by vacuum degassing or the like.
　支持フィルム２０としては、特に制限はなく、例えば、ポリテトラフルオロエチレン、ポリエチレン、ポリプロピレン、ポリメチルペンテン、ポリエチレンテレフタレート、ポリイミド等のフィルムが挙げられる。支持フィルムは、離型処理が施されていてもよい。支持フィルム２０の厚さは、例えば、１０～２００μｍ又は２０～１７０μｍであってよい。 The support film 20 is not particularly limited, and examples thereof include films such as polytetrafluoroethylene, polyethylene, polypropylene, polymethylpentene, polyethylene terephthalate, and polyimide. The support film may be subjected to a mold release treatment. The thickness of the support film 20 may be, for example, 10 to 200 μm or 20 to 170 μm.
　接着剤ワニスを支持フィルム２０に塗布する方法としては、公知の方法を用いることができ、例えば、ナイフコート法、ロールコート法、スプレーコート法、グラビアコート法、バーコート法、カーテンコート法等が挙げられる。加熱乾燥の条件は、使用した溶剤が充分に揮発する条件であれば特に制限はないが、例えば、５０～２００℃で０．１～９０分間であってもよい。 As a method of applying the adhesive varnish to the support film 20, a known method can be used, and for example, a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, a curtain coating method and the like can be used. Can be mentioned. The conditions for heating and drying are not particularly limited as long as the solvent used is sufficiently volatilized, but may be, for example, 0.1 to 90 minutes at 50 to 200 ° C.
　ダイボンディングフィルム１０の厚さは、用途に合わせて、適宜調整することができるが、例えば、３～２００μｍであってよい。ダイボンディングフィルム１０の厚さが３μｍ以上であると、半導体ウェハとの接着強度が充分となる傾向にあり、２００μｍ以下であると、放熱性が充分となる傾向にある。ダイボンディングフィルム１０の厚さは、接着強度及び半導体装置の薄型化の観点から、５～１００μｍ又は１０～５０μｍであってもよい。 The thickness of the die bonding film 10 can be appropriately adjusted according to the intended use, but may be, for example, 3 to 200 μm. When the thickness of the die bonding film 10 is 3 μm or more, the adhesive strength with the semiconductor wafer tends to be sufficient, and when the thickness is 200 μm or less, the heat dissipation property tends to be sufficient. The thickness of the die bonding film 10 may be 5 to 100 μm or 10 to 50 μm from the viewpoint of adhesive strength and thinning of the semiconductor device.
　ダイボンディングフィルム１０において、第１の表面１０Ａの表面粗さは、例えば、１．０μｍ以下であってよい。ここで、第１の表面１０Ａは、ダイシングテープの粘着層上に配置される表面（すなわち、ダイボンディングフィルム１０の支持フィルム２０が接している表面とは反対側の表面）である。なお、本明細書において、表面粗さは、算術平均粗さＲａ（ＪＩＳ　Ｂ　０６０１－２００１）を意味し、算術平均粗さＲａは、実施例に記載の方法で算出された値を意味する。なお、測定倍率は、５０～１００倍であってもよい。 In the die bonding film 10, the surface roughness of the first surface 10A may be, for example, 1.0 μm or less. Here, the first surface 10A is a surface arranged on the adhesive layer of the dicing tape (that is, a surface opposite to the surface in contact with the support film 20 of the dicing film 10). In the present specification, the surface roughness means the arithmetic average roughness Ra (JIS B 0601-2001), and the arithmetic average roughness Ra means the value calculated by the method described in the examples. The measurement magnification may be 50 to 100 times.
　第１の表面１０Ａの表面粗さは、表面粗さによる接着性の低下を防ぐ観点から、例えば、０．９μｍ以下、０．８μｍ以下、０．７μｍ以下、又は０．６μｍ以下であってもよい。第１の表面１０Ａの表面粗さは、表面の平滑性が高くなり過ぎることによるアンカー効果の低下を防ぐ観点から、０．１μｍ以上、０．２μｍ以上、又は０．３μｍ以上であってよい。 The surface roughness of the first surface 10A may be, for example, 0.9 μm or less, 0.8 μm or less, 0.7 μm or less, or 0.6 μm or less from the viewpoint of preventing deterioration of adhesiveness due to the surface roughness. good. The surface roughness of the first surface 10A may be 0.1 μm or more, 0.2 μm or more, or 0.3 μm or more from the viewpoint of preventing a decrease in the anchor effect due to the surface smoothness becoming too high.
　本開示のダイボンディングフィルムは、（ｂ）成分が（ａ）成分の表面の酸化物層（酸化膜）を充分に還元除去し、さらにその状態が維持されることが考えられ、結果として、優れた放熱性を有する者となり得る。そのため、本開示のダイボンディングフィルムは、粘着層を有するダイシングテープと組み合わせて、ダイシング・ダイボンディング一体型フィルムとして好適に用いることができる。 In the die bonding film of the present disclosure, it is considered that the component (b) sufficiently reduces and removes the oxide layer (oxide film) on the surface of the component (a), and the state is maintained, and as a result, it is excellent. It can be a person who has good heat dissipation. Therefore, the die bonding film of the present disclosure can be suitably used as a dicing / die bonding integrated film in combination with a dicing tape having an adhesive layer.
［ダイシング・ダイボンディング一体型フィルム］
　図２は、ダイシング・ダイボンディング一体型フィルムの一実施形態を示す模式断面図である。図２に示されるダイシング・ダイボンディング一体型フィルム１００は、基材４０と基材４０上に設けられた粘着層３０とを有するダイシングテープ５０と、ダイシングテープ５０の粘着層３０上に配置されたダイボンディングフィルム１０とを備える。ダイボンディングフィルム１０は、第１の表面１０Ａ及び第１の表面１０Ａと反対側の第２の表面１０Ｂを有する。ダイシング・ダイボンディング一体型フィルム１００は、ダイボンディングフィルム１０の第２の表面１０Ｂ上に支持フィルム２０が備えられていてもよい。 [Dicing / die bonding integrated film]
FIG. 2 is a schematic cross-sectional view showing an embodiment of a dicing / die bonding integrated film. The dicing-die bonding integrated film 100 shown in FIG. 2 is arranged on a dicing tape 50 having a base material 40 and an adhesive layer 30 provided on the base material 40, and on the adhesive layer 30 of the dicing tape 50. A dicing film 10 is provided. The die bonding film 10 has a first surface 10A and a second surface 10B opposite to the first surface 10A. The dicing / die bonding integrated film 100 may include a support film 20 on the second surface 10B of the dicing / die bonding film 10.
　ダイシングテープ５０における基材４０としては、例えば、ポリテトラフルオロエチレンフィルム、ポリエチレンテレフタレートフィルム、ポリエチレンフィルム、ポリプロピレンフィルム、ポリメチルペンテンフィルム、ポリイミドフィルム等のプラスチックフィルムなどが挙げられる。また、基材４０は、必要に応じて、プライマー塗布、ＵＶ処理、コロナ放電処理、研磨処理、エッチング処理等の表面処理が施されていてもよい。 Examples of the base material 40 in the dicing tape 50 include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. Further, the base material 40 may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment, if necessary.
　粘着層３０は、ダイシングテープの分野で使用される粘着剤からなる粘着層であってよく、感圧型の粘着剤からなる粘着層であっても、紫外線硬化型の粘着剤からなる粘着層であってもよい。粘着層３０が紫外線硬化型の粘着剤からなる粘着層である場合、粘着層３０は紫外線が照射されることによって粘着性が低下する性質を有するものであり得る。 The adhesive layer 30 may be an adhesive layer made of an adhesive used in the field of dicing tape, and even if it is an adhesive layer made of a pressure-sensitive adhesive, it is an adhesive layer made of an ultraviolet curable adhesive. You may. When the adhesive layer 30 is an adhesive layer made of an ultraviolet curable adhesive, the adhesive layer 30 may have a property that the adhesiveness is lowered by irradiation with ultraviolet rays.
　ダイシング・ダイボンディング一体型フィルム１００は、ダイシングテープ５０及びダイボンディングフィルム１０を準備し、ダイボンディングフィルム１０の第１の表面１０Ａをダイシングテープ５０の粘着層３０に貼り付けることによって作製することができる。 The dicing / die bonding integrated film 100 can be produced by preparing the dicing tape 50 and the dicing film 10 and attaching the first surface 10A of the dicing tape 10 to the adhesive layer 30 of the dicing tape 50. ..
　ダイシング・ダイボンディング一体型フィルム１００においては、ダイボンディングフィルム１０が、ダイボンディングフィルムの全量を基準として、７５質量％以上の（ａ）成分を含有する。このような粘着層と接着剤層とを備えるダイシング・ダイボンディング一体型フィルムによれば、優れた放熱性を有するものとなり得る。 In the dicing / die bonding integrated film 100, the die bonding film 10 contains 75% by mass or more of the component (a) based on the total amount of the die bonding film. According to the dicing / die bonding integrated film provided with such an adhesive layer and an adhesive layer, it is possible to have excellent heat dissipation.
［半導体装置（半導体パッケージ）の製造方法］
　図３は、半導体装置の製造方法の一実施形態を示す模式断面図である。図３（ａ）、（ｂ）、（ｃ）、（ｄ）、（ｅ）、及び（ｆ）は、各工程を模式的に示す断面図である。半導体装置の製造方法は、上記のダイシング・ダイボンディング一体型フィルム１００のダイボンディングフィルム１０（接着剤層）（の第２の表面１０Ｂ）を半導体ウェハＷに貼り付ける工程（ウェハラミネート工程、図３（ａ）、（ｂ）参照）と、半導体ウェハＷ及びダイボンディングフィルム１０（接着剤層）を個片化する工程（ダイシング工程、図３（ｃ）参照）と、必要に応じて、粘着層３０に対して（基材４０を介して）紫外線を照射する工程（紫外線照射工程、図３（ｄ）参照）と、粘着層３０ａからダイボンディングフィルム片１０ａが付着した半導体チップＷａ（接着剤片付き半導体チップ６０）をピックアップする工程（ピックアップ工程、図３（ｅ）参照）と、ダイボンディングフィルム片１０ａを介して、接着剤片付き半導体チップ６０を支持基板８０に接着する工程（半導体チップ接着工程、図３（ｆ）参照））とを備える。 [Manufacturing method of semiconductor device (semiconductor package)]
FIG. 3 is a schematic cross-sectional view showing an embodiment of a method for manufacturing a semiconductor device. 3 (a), (b), (c), (d), (e), and (f) are sectional views schematically showing each step. The method for manufacturing the semiconductor device is a step of attaching the die bonding film 10 (adhesive layer) (second surface 10B) of the above-mentioned dicing / die bonding integrated film 100 to the semiconductor wafer W (wafer laminating step, FIG. 3). (A), (b)), a step of separating the semiconductor wafer W and the die bonding film 10 (adhesive layer) (dying step, see FIG. 3C), and, if necessary, an adhesive layer. A step of irradiating the 30 with ultraviolet rays (via the base material 40) (ultraviolet irradiation step, see FIG. 3D) and a semiconductor chip Wa (with an adhesive piece) to which the die bonding film piece 10a is attached from the adhesive layer 30a. A step of picking up the semiconductor chip 60) (pickup step, see FIG. 3E) and a step of adhering the semiconductor chip 60 with an adhesive piece to the support substrate 80 via the die bonding film piece 10a (semiconductor chip bonding step, (See FIG. 3 (f))).
＜ウェハラミネート工程＞
　まず、ダイシング・ダイボンディング一体型フィルム１００を所定の装置に配置する。続いて、ダイシング・ダイボンディング一体型フィルム１００のダイボンディングフィルム１０（接着剤層）の第２の表面１０Ｂを半導体ウェハＷの表面Ｗｓに貼り付ける（図３（ａ）、（ｂ）参照）。半導体ウェハＷの回路面は、表面Ｗｓとは反対側の面に設けられていることが好ましい。 <Wafer laminating process>
First, the dicing / die bonding integrated film 100 is placed in a predetermined device. Subsequently, the second surface 10B of the die bonding film 10 (adhesive layer) of the dicing / die bonding integrated film 100 is attached to the surface Ws of the semiconductor wafer W (see FIGS. 3A and 3B). The circuit surface of the semiconductor wafer W is preferably provided on the surface opposite to the surface Ws.
＜ダイシング工程＞
　次に、半導体ウェハＷ及びダイボンディングフィルム１０（接着剤層）をダイシングする（図３（ｃ）参照）。このとき、粘着層３０の一部、又は、粘着層３０の全部及び基材４０の一部がダイシングされていてもよい。このように、ダイシング・ダイボンディング一体型フィルム１００は、ダイシングシートとしても機能する。 <Dicing process>
Next, the semiconductor wafer W and the die bonding film 10 (adhesive layer) are diced (see FIG. 3C). At this time, a part of the adhesive layer 30, the whole of the adhesive layer 30, and a part of the base material 40 may be diced. As described above, the dicing-die bonding integrated film 100 also functions as a dicing sheet.
＜紫外線照射工程＞
　次に、必要に応じて、粘着層３０に対して（基材４０を介して）紫外線を照射する（図３（ｄ）参照）。これによって、当該粘着層３０が硬化し、粘着層３０とダイボンディングフィルム１０（接着剤層）との間の接着強度を充分に低減させることができる。紫外線照射においては、波長２００～４００ｎｍの紫外線を用いることが好ましい。紫外線照射条件は、照度及び照射量をそれぞれ３０～２４０ｍＷ／ｃｍ２の範囲及び５０～５００ｍＪ／ｃｍ２の範囲に調整することが好ましい。 <Ultraviolet irradiation process>
Next, if necessary, the adhesive layer 30 is irradiated with ultraviolet rays (via the base material 40) (see FIG. 3D). As a result, the adhesive layer 30 is cured, and the adhesive strength between the adhesive layer 30 and the die bonding film 10 (adhesive layer) can be sufficiently reduced. In ultraviolet irradiation, it is preferable to use ultraviolet rays having a wavelength of 200 to 400 nm. As for the ultraviolet irradiation conditions, it is preferable to adjust the illuminance and the irradiation amount to the range of 30 to 240 mW / cm 2 and the range of 50 to 500 mJ / cm 2, respectively.
＜ピックアップ工程＞
　次に、基材４０をエキスパンドすることによって、ダイシングされた接着剤片付き半導体チップ６０を互いに離間させつつ、基材４０側からニードル７２で突き上げられた接着剤片付き半導体チップ６０を吸引コレット７４で吸引して粘着層３０ａからピックアップする（図３（ｅ）参照）。なお、接着剤片付き半導体チップ６０は、半導体チップＷａとダイボンディングフィルム片１０ａとを有する。半導体チップＷａは半導体ウェハＷがダイシングによって個片化されたものであり、ダイボンディングフィルム片１０ａはダイボンディングフィルム１０がダイシングによって個片化されたものである。また、粘着層３０ａは粘着層３０がダイシングによって個片化されたものである。粘着層３０ａは接着剤片付き半導体チップ６０をピックアップする際に基材４０上に残存し得る。ピックアップ工程では、必ずしも基材４０をエキスパンドすることは必要ないが、基材４０をエキスパンドすることによってピックアップ性をより向上させることができる。 <Pickup process>
Next, by expanding the base material 40, the semiconductor chips 60 with adhesive pieces pushed up from the base material 40 side by the needle 72 are sucked by the suction collet 74 while separating the semiconductor chips 60 with adhesive pieces that have been diced from each other. Then, it is picked up from the adhesive layer 30a (see FIG. 3E). The semiconductor chip 60 with an adhesive piece has a semiconductor chip Wa and a die bonding film piece 10a. The semiconductor chip Wa is a semiconductor wafer W individualized by dicing, and the die bonding film piece 10a is an individualized die bonding film 10 by dicing. Further, the adhesive layer 30a is an adhesive layer 30 individualized by dicing. The adhesive layer 30a may remain on the base material 40 when the semiconductor chip 60 with the adhesive piece is picked up. In the pick-up step, it is not always necessary to expand the base material 40, but by expanding the base material 40, the pick-up property can be further improved.
　ニードル７２による突き上げ量は、適宜設定することができる。さらに、極薄ウェハに対しても充分なピックアップ性を確保する観点から、例えば、２段又は３段の突き上げを行ってもよい。また、吸引コレット７４を用いる方法以外の方法で接着剤片付き半導体チップ６０をピックアップしてもよい。 The amount of push-up by the needle 72 can be set as appropriate. Further, from the viewpoint of ensuring sufficient pick-up property even for ultra-thin wafers, for example, two-stage or three-stage push-up may be performed. Further, the semiconductor chip 60 with an adhesive piece may be picked up by a method other than the method using the suction collet 74.
＜半導体チップ接着工程＞
　接着剤片付き半導体チップ６０をピックアップした後、接着剤片付き半導体チップ６０を、熱圧着によって、ダイボンディングフィルム片１０ａを介して支持基板８０に接着する（図３（ｆ）参照）。支持基板８０には、複数の接着剤片付き半導体チップ６０を接着してもよい。 <Semiconductor chip bonding process>
After picking up the semiconductor chip 60 with the adhesive piece, the semiconductor chip 60 with the adhesive piece is bonded to the support substrate 80 via the die bonding film piece 10a by thermocompression bonding (see FIG. 3 (f)). A plurality of semiconductor chips 60 with adhesive pieces may be adhered to the support substrate 80.
　半導体装置の製造方法は、必要に応じて、半導体チップＷａと支持基板８０とをワイヤーボンドによって電気的に接続する工程と、支持基板８０の表面８０Ａ上に、樹脂封止材を用いて半導体チップＷａを樹脂封止する工程とをさらに備えていてもよい。 The semiconductor device manufacturing method includes, if necessary, a step of electrically connecting the semiconductor chip Wa and the support substrate 80 by wire bonding, and a semiconductor chip using a resin encapsulant on the surface 80A of the support substrate 80. It may further include a step of sealing Wa with a resin.
　図４は、半導体装置の一実施形態を示す模式断面図である。図４に示される半導体装置２００は、上記の工程を経ることによって製造することができる。半導体装置２００は、半導体チップＷａと支持基板８０とがワイヤーボンド７０によって電気的に接続されていてもよい。半導体装置２００は、支持基板８０の表面８０Ａ上に、樹脂封止材９２を用いて半導体チップＷａが樹脂封止されていてもよい。支持基板８０の表面８０Ａと反対側の面に、外部基板（マザーボード）との電気的な接続用として、はんだボール９４が形成されていてもよい。 FIG. 4 is a schematic cross-sectional view showing an embodiment of a semiconductor device. The semiconductor device 200 shown in FIG. 4 can be manufactured by going through the above steps. In the semiconductor device 200, the semiconductor chip Wa and the support substrate 80 may be electrically connected by a wire bond 70. In the semiconductor device 200, the semiconductor chip Wa may be resin-sealed on the surface 80A of the support substrate 80 by using the resin encapsulant 92. Solder balls 94 may be formed on the surface of the support substrate 80 opposite to the surface 80A for electrical connection with an external substrate (motherboard).
　以下、実施例により本開示について説明するが、本開示はこれらの実施例に限定されるものではない。 Hereinafter, the present disclosure will be described with reference to Examples, but the present disclosure is not limited to these Examples.
＜接着剤ワニスの調製＞
　表１に示す記号及び組成比（単位：質量部）で、（ｃ）熱硬化性樹脂としてのエポキシ樹脂、（ｄ）硬化剤としてのフェノール樹脂、及び（ｅ）エラストマーとしてのアクリルゴムにシクロヘキサノンを加え、撹拌することによって混合物を得た。各成分が溶解した後、混合物に（ａ）表面に酸化物層を有する銀含有粒子を加えて、ディスパー翼を用いて撹拌し、各成分が均一になるまで分散した。その後、（ｆ）硬化促進剤を加え、各成分が均一になるまで分散することによって、固形分７８質量％の接着剤ワニスＡ～Ｇを得た。 <Preparation of adhesive varnish>
With the symbols and composition ratios (unit: parts by mass) shown in Table 1, cyclohexanone is added to (c) epoxy resin as a thermosetting resin, (d) phenol resin as a curing agent, and (e) acrylic rubber as an elastomer. In addition, the mixture was obtained by stirring. After each component was dissolved, (a) silver-containing particles having an oxide layer on the surface were added to the mixture, and the mixture was stirred using a disper blade and dispersed until each component became uniform. Then, (f) a curing accelerator was added, and each component was dispersed until it became uniform to obtain adhesive varnishes A to G having a solid content of 78% by mass.
　なお、表１の各成分の記号は下記の製品を意味する。 The symbols of each component in Table 1 mean the following products.
（ａ）表面に酸化物層を有する銀含有粒子
・Ａｇ－ＨＷＱ１．５μｍ（商品名、アトマイズ法によって製造された銀粒子、福田金属箔粉工業株式会社製、形状：球状、平均粒径（レーザー５０％粒径（Ｄ５０））：１．０～２．０μｍ） (A) Silver-containing particles having an oxide layer on the surface-Ag-HWQ 1.5 μm (trade name, silver particles manufactured by the atomizing method, manufactured by Fukuda Metal Foil Powder Industry Co., Ltd., shape: spherical, average particle size (laser) 50% particle size (D 50 )): 1.0 to 2.0 μm)
（ｂ）フラックス剤
・グルタル酸（富士フイルム和光純薬株式会社製、分子量：１３２．１）
・ベンジル酸（東京化成工業株式会社製、芳香族カルボン酸、分子量：２２８．３） (B) Flux agent / glutaric acid (manufactured by Wako Pure Chemical Industries, Ltd., molecular weight: 132.1)
Benzilic acid (manufactured by Tokyo Chemical Industry Co., Ltd., aromatic carboxylic acid, molecular weight: 228.3)
（ｃ）熱硬化性樹脂
・ＥＸＡ－８３０ＣＲＰ（商品名、ＤＩＣ株式会社製、ビスフェノール型エポキシ樹脂、エポキシ当量：１５９ｇ／ｅｑ、２５℃で液状） (C) Thermosetting resin EXA-830CRP (trade name, manufactured by DIC Corporation, bisphenol type epoxy resin, epoxy equivalent: 159 g / eq, liquid at 25 ° C)
（ｄ）硬化剤
・ＭＥＨ－７８００Ｍ（商品名、明和化成株式会社製、フェノール樹脂、粘度（１５０℃）：０．３１～０．４３Ｐａ・ｓ（３．１～４．３ｐｏｉｓｅ）、水酸基当量：１７５ｇ／ｅｑ） (D) Curing agent, MEH-7800M (trade name, manufactured by Meiwa Kasei Co., Ltd., phenol resin, viscosity (150 ° C.): 0.31 to 0.43 Pa · s (3.1 to 4.3 pose), hydroxyl group equivalent: 175g / eq)
（ｅ）エラストマー
・ＨＴＲ－８６０Ｐ－３ＣＳＰ（商品名、ナガセケムテックス株式会社製、アクリルゴム、重量平均分子量：１００万、Ｔｇ：－７℃）
・ＳＧ－２８０　ＥＫ２３（商品名、ナガセケムテックス株式会社製、アクリルゴム、重量平均分子量：９０万、Ｔｇ：－２９℃） (E) Elastomer HTR-860P-3CSP (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 1 million, Tg: -7 ° C)
SG-280 EK23 (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 900,000, Tg: -29 ° C)
（ｆ）硬化促進剤
・２ＰＺ－ＣＮ（商品名、四国化成工業株式会社製、１－シアノエチル－２－フェニルイミダゾール） (F) Curing accelerator, 2PZ-CN (trade name, manufactured by Shikoku Chemicals Corporation, 1-cyanoethyl-2-phenylimidazole)
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
（実施例１）
＜ダイボンディングフィルムの作製＞
　ダイボンディングフィルムの作製に、接着剤ワニスＡを用いた。真空脱泡した接着剤ワニスＡを、支持フィルムである離型処理を施したポリエチレンテレフタレート（ＰＥＴ）フィルム（厚さ３８μｍ）上に塗布した。塗布したワニスを、９０℃で５分間、続いて１３０℃で５分間の２段階で加熱乾燥し、支持フィルム上に、Ｂステージ状態にある厚さ２０μｍの実施例１のダイボンディングフィルムを作製した。 (Example 1)
<Making a die bonding film>
Adhesive varnish A was used to prepare the die bonding film. The vacuum-defoamed adhesive varnish A was applied onto a support film, a polyethylene terephthalate (PET) film (thickness 38 μm) that had undergone a mold release treatment. The applied varnish was heat-dried at 90 ° C. for 5 minutes and then at 130 ° C. for 5 minutes in two steps to prepare a die bonding film of Example 1 having a thickness of 20 μm in a B stage state on a support film. ..
＜熱伝導率の測定＞
（熱伝導率測定用フィルムの作製）
　実施例１のダイボンディングフィルムを複数枚ゴムロールにて張り合わせ、１００μｍ以上の厚さの積層フィルムを作製した。得られた積層フィルムを両面がＰＥＴフィルムで覆われた状態で、１１０℃で１時間、次いで、１７０℃で３時間の条件で熱硬化させて熱伝導率測定用フィルムを得た。 <Measurement of thermal conductivity>
(Making a film for measuring thermal conductivity)
A plurality of die bonding films of Example 1 were laminated with rubber rolls to prepare a laminated film having a thickness of 100 μm or more. The obtained laminated film was thermally cured at 110 ° C. for 1 hour and then at 170 ° C. for 3 hours with both sides covered with the PET film to obtain a film for measuring thermal conductivity.
（熱伝導率の測定）
　熱伝導率測定用フィルムの熱伝導率は、下記式によって算出した。結果を表２に示す。
　熱伝導率（Ｗ／ｍ・Ｋ）＝熱拡散率α（ｍｍ２／ｓ）×比熱Ｃｐ（Ｊ／ｇ・Ｋ）×比重（ｇ／ｃｍ３）
　なお、熱拡散率α、比熱Ｃｐ、及び比重は以下の方法によって測定した。熱伝導率が高くなることは、放熱性により優れることを意味する。 (Measurement of thermal conductivity)
The thermal conductivity of the film for measuring thermal conductivity was calculated by the following formula. The results are shown in Table 2.
Thermal conductivity (W / m · K) = thermal diffusivity α (mm 2 / s) × specific heat Cp (J / g · K) × specific gravity (g / cm 3 )
The thermal diffusivity α, the specific heat Cp, and the specific gravity were measured by the following methods. Higher thermal conductivity means better heat dissipation.
（熱拡散率αの測定）
　上記で得られた熱伝導率測定用フィルムを１０ｍｍ角に切断した。ブラックガードスプレー（ＦＣ－１５３、ファインケミカルジャパン株式会社製）を切断した熱伝導率測定用フィルムの両面に塗布し、測定用サンプルとした。測定には、フラッシュアナライザー（ＬＦＡ４６７　ＨｙｐｅｒＦｌａｓｈ、ネッチ・ジャパン株式会社製）を用い、３５℃における熱拡散率αを測定した。 (Measurement of thermal diffusivity α)
The film for measuring thermal conductivity obtained above was cut into 10 mm squares. Black guard spray (FC-153, manufactured by Fine Chemical Japan Co., Ltd.) was applied to both sides of a cut film for measuring thermal conductivity to prepare a sample for measurement. For the measurement, a flash analyzer (LFA467 HyperFlash, manufactured by Netch Japan Co., Ltd.) was used to measure the thermal diffusivity α at 35 ° C.
（比熱Ｃｐの測定）
　示差走査熱量測定（ＤＳＣ）装置（高感度示差走査熱量計ＤＳＣ８２３１（株式会社リガク製））を用いて、昇温速度１０℃／ｍｉｎ、温度２５℃～７０℃の条件で測定することによって、３５℃における比熱Ｃｐを算出した。 (Measurement of specific heat Cp)
35 by measuring with a differential scanning calorimetry (DSC) device (high-sensitivity differential scanning calorimeter DSC8231 (manufactured by Rigaku Co., Ltd.)) at a heating rate of 10 ° C / min and a temperature of 25 ° C to 70 ° C. The specific heat Cp at ° C was calculated.
（比重の測定）
　電子比重計（ＥＷ－３００ＳＧ、アルファーミラージュ株式会社製）を用いて、アルキメデス法によって測定した。 (Measurement of specific gravity)
It was measured by the Archimedes method using an electronic hydrometer (EW-300SG, manufactured by Alpha Mirage Co., Ltd.).
＜ダイシング・ダイボンディング一体型フィルムの作製＞
　基材と粘着層とを有するダイシングテープ（商品名：６３６３－３０、日立化成株式会社製）を用意し、実施例１のダイボンディングフィルムに、ダイシングテープの粘着層をゴムロールにて張り合わせて、基材、粘着層、及び接着剤層（ダイボンディングフィルム）をこの順に有する実施例１のダイシング・ダイボンディング一体型フィルムを作製した。 <Making a dicing / die bonding integrated film>
A dicing tape (trade name: 6363-30, manufactured by Hitachi Kasei Co., Ltd.) having a base material and an adhesive layer is prepared, and the adhesive layer of the dicing tape is bonded to the die bonding film of Example 1 with a rubber roll to form a base. The dicing / die bonding integrated film of Example 1 having a material, an adhesive layer, and an adhesive layer (die bonding film) in this order was produced.
＜紫外線照射前後の粘着層と接着剤層との間のＴ字ピール強度の測定＞
　実施例１のダイシング・ダイボンディング一体型フィルムを用意し、これを用いて、粘着層と接着剤層との間のＴ字ピール強度を測定した。測定には、オートグラフＥＺ－Ｓ　５０Ｎ（株式会社島津製作所製）を用いた。ダイシング・ダイボンディング一体型フィルムの接着剤層（ダイボンディングフィルム）側にイージーカットテープ（王子タック株式会社製）を貼り付け、ダイシング・ダイボンディング一体型フィルムを幅２５ｍｍ、長さ１００ｍｍのサイズで切り出してサンプルを得た。このサンプルを用いてチャック間距離５０ｍｍ、速度３００ｍｍ／分にて、紫外線照射前後の粘着層と接着剤層との間のＴ字ピール強度を測定した。紫外線照射はハロゲンランプにて８０ｍＷ／ｃｍ２、２００ｍＪ／ｃｍ２の条件で照射した。測定は、紫外線照射前と紫外線照射後とでそれぞれ３回ずつ行い、３回の平均値を剥離強度とした。結果を表２に示す。 <Measurement of T-shaped peel strength between the adhesive layer and the adhesive layer before and after UV irradiation>
The dicing / die bonding integrated film of Example 1 was prepared, and the T-shaped peel strength between the adhesive layer and the adhesive layer was measured using the film. An autograph EZ-S 50N (manufactured by Shimadzu Corporation) was used for the measurement. Attach Easy Cut Tape (manufactured by Oji Tuck Co., Ltd.) to the adhesive layer (die bonding film) side of the dicing / die bonding integrated film, and cut out the dicing / die bonding integrated film in a size of 25 mm in width and 100 mm in length. I got a sample. Using this sample, the T-shaped peel strength between the adhesive layer and the adhesive layer before and after ultraviolet irradiation was measured at a distance between chucks of 50 mm and a speed of 300 mm / min. The ultraviolet irradiation was performed with a halogen lamp under the conditions of 80 mW / cm 2 and 200 mJ / cm 2. The measurement was performed three times each before and after the ultraviolet irradiation, and the average value of the three times was taken as the peel strength. The results are shown in Table 2.
（実施例２）
　ダイボンディングフィルムの作製に接着剤ワニスＢを用いた以外は、実施例１と同様にして、実施例２のダイボンディングフィルム及びダイシング・ダイボンディング一体型フィルムを得た。実施例２のダイボンディングフィルム及びダイシング・ダイボンディング一体型フィルムについて、実施例１と同様にして、熱伝導率及び紫外線照射前後の粘着層と接着剤層との間のＴ字ピール強度を測定した。結果を表２に示す。 (Example 2)
The die bonding film of Example 2 and the dicing / die bonding integrated film were obtained in the same manner as in Example 1 except that the adhesive varnish B was used for producing the die bonding film. For the die bonding film of Example 2 and the dicing / die bonding integrated film, the thermal conductivity and the T-shaped peel strength between the adhesive layer and the adhesive layer before and after irradiation with ultraviolet rays were measured in the same manner as in Example 1. .. The results are shown in Table 2.
（実施例３）
　ダイボンディングフィルムの作製に接着剤ワニスＣを用いた以外は、実施例１と同様にして、実施例３のダイボンディングフィルム及びダイシング・ダイボンディング一体型フィルムを得た。実施例３のダイボンディングフィルム及びダイシング・ダイボンディング一体型フィルムについて、実施例１と同様にして、熱伝導率及び紫外線照射前後の粘着層と接着剤層との間のＴ字ピール強度を測定した。結果を表２に示す。 (Example 3)
The die bonding film of Example 3 and the dicing / die bonding integrated film were obtained in the same manner as in Example 1 except that the adhesive varnish C was used for producing the die bonding film. For the die bonding film of Example 3 and the dicing / die bonding integrated film, the thermal conductivity and the T-shaped peel strength between the adhesive layer and the adhesive layer before and after irradiation with ultraviolet rays were measured in the same manner as in Example 1. .. The results are shown in Table 2.
（実施例４）
　ダイボンディングフィルムの作製に接着剤ワニスＤを用いた以外は、実施例１と同様にして、実施例４のダイボンディングフィルム及びダイシング・ダイボンディング一体型フィルムを得た。実施例４のダイボンディングフィルム及びダイシング・ダイボンディング一体型フィルムについて、実施例１と同様にして、熱伝導率及び紫外線照射前後の粘着層と接着剤層との間のＴ字ピール強度を測定した。結果を表２に示す。 (Example 4)
The die bonding film of Example 4 and the dicing / die bonding integrated film were obtained in the same manner as in Example 1 except that the adhesive varnish D was used for producing the die bonding film. For the die bonding film of Example 4 and the dicing / die bonding integrated film, the thermal conductivity and the T-shaped peel strength between the adhesive layer and the adhesive layer before and after irradiation with ultraviolet rays were measured in the same manner as in Example 1. .. The results are shown in Table 2.
（実施例５）
　ダイボンディングフィルムの作製に接着剤ワニスＥを用いた以外は、実施例１と同様にして、実施例５のダイボンディングフィルム及びダイシング・ダイボンディング一体型フィルムを得た。実施例５のダイボンディングフィルム及びダイシング・ダイボンディング一体型フィルムについて実施例１と同様にして、熱伝導率及び紫外線照射前後の粘着層と接着剤層との間のＴ字ピール強度を測定した。結果を表２に示す。 (Example 5)
The die bonding film of Example 5 and the dicing / die bonding integrated film were obtained in the same manner as in Example 1 except that the adhesive varnish E was used for producing the die bonding film. For the die bonding film of Example 5 and the dicing / die bonding integrated film, the thermal conductivity and the T-shaped peel strength between the adhesive layer and the adhesive layer before and after irradiation with ultraviolet rays were measured in the same manner as in Example 1. The results are shown in Table 2.
（実施例６）
　ダイボンディングフィルムの作製に接着剤ワニスＦを用いた以外は、実施例１と同様にして、実施例６のダイボンディングフィルム及びダイシング・ダイボンディング一体型フィルムを得た。実施例６のダイボンディングフィルム及びダイシング・ダイボンディング一体型フィルムについて、実施例１と同様にして、熱伝導率及び紫外線照射前後の粘着層と接着剤層との間のＴ字ピール強度を測定した。結果を表２に示す。 (Example 6)
The die bonding film of Example 6 and the dicing / die bonding integrated film were obtained in the same manner as in Example 1 except that the adhesive varnish F was used for producing the die bonding film. For the die bonding film of Example 6 and the dicing / die bonding integrated film, the thermal conductivity and the T-shaped peel strength between the adhesive layer and the adhesive layer before and after irradiation with ultraviolet rays were measured in the same manner as in Example 1. .. The results are shown in Table 2.
（比較例１）
　ダイボンディングフィルムの作製に接着剤ワニスＧを用いた以外は、実施例１と同様にして、比較例１のダイボンディングフィルム及びダイシング・ダイボンディング一体型フィルムを得た。比較例１のダイボンディングフィルムについて、実施例１と同様にして、熱伝導率を測定した。結果を表２に示す。なお、比較例１のダイボンディングフィルムの熱伝導率が充分でなかったことから、比較例１のダイシング・ダイボンディング一体型フィルムについては、紫外線照射前後の粘着層と接着剤層との間のＴ字ピール強度は測定しなかった。結果を表２に示す。 (Comparative Example 1)
The die bonding film of Comparative Example 1 and the dicing / die bonding integrated film were obtained in the same manner as in Example 1 except that the adhesive varnish G was used for producing the die bonding film. For the die bonding film of Comparative Example 1, the thermal conductivity was measured in the same manner as in Example 1. The results are shown in Table 2. Since the thermal conductivity of the die bonding film of Comparative Example 1 was not sufficient, the dicing / die bonding integrated film of Comparative Example 1 had a T between the adhesive layer and the adhesive layer before and after irradiation with ultraviolet rays. The character peel strength was not measured. The results are shown in Table 2.
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
　表２に示すとおり、フラックス剤を含有する実施例１～６のダイシング・ダイボンディング一体型フィルムは、フラックス剤を含有しない比較例１のダイシング・ダイボンディング一体型フィルムに比べて、熱伝導率に優れていた。また、ベンジル酸を含有する実施例５、６のダイシング・ダイボンディング一体型フィルムは、紫外照射後のＴ字ピール強度が紫外照射前のＴ字ピール強度よりも低減できることが判明した。これらの結果から、本開示のダイシング・ダイボンディング一体型フィルムが優れた放熱性を有していることが確認された。 As shown in Table 2, the dicing / die bonding integrated film of Examples 1 to 6 containing the flux agent has a higher thermal conductivity than the dicing / die bonding integrated film of Comparative Example 1 containing no flux agent. It was excellent. Further, it was found that the dicing / die bonding integrated film of Examples 5 and 6 containing benzylic acid can reduce the T-shaped peel strength after ultraviolet irradiation as compared with the T-shaped peel strength before ultraviolet irradiation. From these results, it was confirmed that the dicing / die bonding integrated film of the present disclosure has excellent heat dissipation.
　１０…ダイボンディングフィルム、１０Ａ…第１の表面、１０Ｂ…第２の表面、１０ａ…ダイボンディングフィルム片、２０…支持フィルム、３０…粘着層、４０…基材、５０…ダイシングテープ、６０…接着剤片付き半導体チップ、７０…ワイヤーボンド、７２…ニードル、７４…吸引コレット、８０…支持基板、９２…樹脂封止材、９４…はんだボール、１００…ダイシング・ダイボンディング一体型フィルム、２００…半導体装置。 10 ... Die bonding film, 10A ... First surface, 10B ... Second surface, 10a ... Die bonding film piece, 20 ... Support film, 30 ... Adhesive layer, 40 ... Base material, 50 ... Dicing tape, 60 ... Adhesive Semiconductor chip with agent piece, 70 ... Wire bond, 72 ... Needle, 74 ... Suction collet, 80 ... Support substrate, 92 ... Resin encapsulant, 94 ... Solder ball, 100 ... Dicing / die bonding integrated film, 200 ... Semiconductor device ..

Claims (10)

  1. 　基材と前記基材上に設けられた粘着層とを有するダイシングテープと、
    　前記ダイシングテープの前記粘着層上に配置されたダイボンディングフィルムと、
    を備え、
    　前記ダイボンディングフィルムが、表面に酸化物層を有する銀含有粒子と、フラックス剤とを含有し、
    　前記銀含有粒子の含有量が、ダイボンディングフィルムの全量を基準として、７５質量％以上である、
    　ダイシング・ダイボンディング一体型フィルム。     A dicing tape having a base material and an adhesive layer provided on the base material, and
    A die bonding film arranged on the adhesive layer of the dicing tape, and
    Equipped with
    The die bonding film contains silver-containing particles having an oxide layer on the surface and a flux agent.
    The content of the silver-containing particles is 75% by mass or more based on the total amount of the die bonding film.
    Dicing / die bonding integrated film.
  2. 　前記フラックス剤が芳香族カルボン酸である、
    　請求項１に記載のダイシング・ダイボンディング一体型フィルム。     The flux agent is an aromatic carboxylic acid.
    The dicing / die bonding integrated film according to claim 1.
  3. 　前記ダイボンディングフィルムが、熱硬化性樹脂、硬化剤、及びエラストマーをさらに含有する、
    　請求項１又は２に記載のダイシング・ダイボンディング一体型フィルム。     The die bonding film further contains a thermosetting resin, a curing agent, and an elastomer.
    The dicing / die bonding integrated film according to claim 1 or 2.
  4. 　前記熱硬化性樹脂が２５℃で液状のエポキシ樹脂を含む、
    　請求項３に記載のダイシング・ダイボンディング一体型フィルム。     The thermosetting resin contains an epoxy resin that is liquid at 25 ° C.
    The dicing / die bonding integrated film according to claim 3.
  5. 　請求項１～４のいずれか一項に記載のダイシング・ダイボンディング一体型フィルムの前記ダイボンディングフィルムを半導体ウェハに貼り付ける工程と、
    　前記半導体ウェハ及び前記ダイボンディングフィルムを個片化する工程と、
    　前記ダイシングテープからダイボンディングフィルム片が付着した半導体チップをピックアップする工程と、
    　前記ダイボンディングフィルム片を介して、前記半導体チップを支持基板に接着する工程と、
    を備える、
    　半導体装置の製造方法。     The step of attaching the dicing / die bonding integrated film of the dicing / die bonding integrated film according to any one of claims 1 to 4 to a semiconductor wafer.
    The process of individualizing the semiconductor wafer and the die bonding film, and
    The process of picking up the semiconductor chip to which the die bonding film piece is attached from the dicing tape,
    The step of adhering the semiconductor chip to the support substrate via the die bonding film piece,
    To prepare
    Manufacturing method of semiconductor devices.
  6. 　前記半導体ウェハ及び前記ダイボンディングフィルムを個片化する工程の後に、前記粘着層に対して、紫外線を照射する工程をさらに備える、
    　請求項５に記載の半導体装置の製造方法。     After the step of individualizing the semiconductor wafer and the die bonding film, a step of irradiating the adhesive layer with ultraviolet rays is further provided.
    The method for manufacturing a semiconductor device according to claim 5.
  7. 　表面に酸化物層を有する銀含有粒子と、フラックス剤とを含有し、
    　前記銀含有粒子の含有量が、ダイボンディングフィルムの全量を基準として、７５質量％以上である、
    　ダイボンディングフィルム。     Contains silver-containing particles having an oxide layer on the surface and a flux agent,
    The content of the silver-containing particles is 75% by mass or more based on the total amount of the die bonding film.
    Die bonding film.
  8. 　前記フラックス剤が芳香族カルボン酸である、
    　請求項７に記載のダイボンディングフィルム。     The flux agent is an aromatic carboxylic acid.
    The die bonding film according to claim 7.
  9. 　熱硬化性樹脂、硬化剤、及びエラストマーをさらに含有する、
    　請求項７又は８に記載のダイボンディングフィルム。     Further containing a thermosetting resin, a curing agent, and an elastomer,
    The die bonding film according to claim 7 or 8.
  10. 　前記熱硬化性樹脂が２５℃で液状のエポキシ樹脂を含む、
    　請求項９に記載のダイボンディングフィルム。     The thermosetting resin contains an epoxy resin that is liquid at 25 ° C.
    The die bonding film according to claim 9.
PCT/JP2021/021053 2020-07-08 2021-06-02 Integrated dicing die-bonding film, die-bonding film, and method for producing semiconductor device WO2022009571A1 (en)

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