JP2021061284A - Die bonding film, film-type adhesive, semiconductor device, and manufacturing method of the same - Google Patents

Abstract

To provide a film-type adhesive with excellent heat dissipation properties.SOLUTION: A film-type adhesive 10 includes a metal filler, a solder, a polyol, a thermosetting resin component, and an elastomer. The film-type adhesive 10 may be a die bonding film used to bond semiconductor chips to a support substrate or to bond semiconductor chips to each other.SELECTED DRAWING: Figure 1

Description

The present disclosure relates to a die bonding film, a film-like adhesive, a semiconductor device, and a method for manufacturing the same.

Conventionally, a semiconductor device is manufactured through the following steps. First, the semiconductor wafer is attached to the adhesive sheet for dicing, and the semiconductor wafer is separated into semiconductor chips in that state (dicing step). After that, a pickup step, a crimping step, a die bonding step, and the like are carried out. Patent Document 1 discloses an adhesive sheet (dicing / die bonding integrated film) having both a function of fixing a semiconductor wafer in a dicing process and a function of adhering a semiconductor chip to a support substrate in a dicing process. There is. In the dicing step, the semiconductor wafer and the adhesive layer are separated into individual pieces to obtain a semiconductor chip with an adhesive piece.

Japanese Unexamined Patent Publication No. 2008-218571

By the way, in recent years, devices called power semiconductor devices that control electric power and the like have become widespread. In a power semiconductor device, heat is likely to be generated due to a supplied current. For example, a film-like adhesive constituting a dicing / die bonding integrated sheet is required to have excellent heat dissipation.

Therefore, it is a main object of the present disclosure to provide a film-like adhesive having excellent heat dissipation.

One aspect of the present disclosure provides a film-like adhesive containing a metal filler, a solder, a polyol, a thermosetting resin component, and an elastomer. The film-like adhesive may be a die bonding film used for bonding (bonding) a semiconductor chip (die) and a support substrate, or bonding (bonding) between semiconductor chips (dies).

The film-like adhesive may further contain a polymer containing a structural unit derived from a compound having a carboxy group.

The melting temperature of the solder may be 180 ° C. or lower.

Another aspect of the present disclosure provides a method of manufacturing a semiconductor device, comprising a step of adhering a semiconductor chip and a support substrate using the die bonding film described above.

Another aspect of the present disclosure includes a semiconductor chip, a support substrate on which the semiconductor chip is mounted, and an adhesive member provided between the semiconductor chip and the support substrate to bond the semiconductor chip and the support substrate. Provides a semiconductor device which is a cured product of the above die bonding film.

According to the present disclosure, a film-like adhesive having excellent heat dissipation properties (particularly, a die bonding film) is provided. Further, according to the present disclosure, a semiconductor device using such a die bonding film and a method for manufacturing the same are provided.

FIG. 1 is a schematic cross-sectional view showing an embodiment of a film-like adhesive. FIG. 2 is a schematic cross-sectional view showing an embodiment of a dicing / die bonding integrated film. FIG. 3 is a schematic cross-sectional view showing an embodiment of a method for manufacturing a semiconductor device. 3 (a), (b), (c), (d), (e), and (f) are cross-sectional views schematically showing each step. FIG. 4 is a schematic cross-sectional view showing an embodiment of a semiconductor device.

Hereinafter, embodiments of the present disclosure will be described with reference to the drawings as appropriate. However, the present disclosure is not limited to the following embodiments. In the following embodiments, the components (including steps and the like) are not essential unless otherwise specified. The sizes of the components in each figure are conceptual, and the relative size relationships between the components are not limited to those shown in each figure.

The same applies to the numerical values and their ranges in the present specification, and the present disclosure is not limited. The numerical range indicated by using "~" in the present specification indicates a range including the numerical values before and after "~" as the minimum value and the maximum value, respectively. In the numerical range described stepwise in the present specification, the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of another numerical range described stepwise. Good. Further, in the numerical range described in the present specification, the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.

As used herein, (meth) acrylate means acrylate or the corresponding methacrylate. The same applies to other similar expressions such as (meth) acrylic acid.

[Film-like adhesive]
FIG. 1 is a schematic cross-sectional view showing an embodiment of a film-like adhesive. As shown in FIG. 1, the film-like adhesive 10 may be provided on the support film 20. The film-like adhesive 10 is thermosetting and can be in a semi-cured (B stage) state and then in a completely cured product (C stage) state after a curing treatment. The film-like adhesive may be a die bonding film used for bonding the semiconductor chip and the support substrate or bonding the semiconductor chips to each other.

The film-like adhesive 10 includes a metal filler (hereinafter, may be referred to as a component (a)), a solder (hereinafter, may be referred to as a component (b)), and a polyol (hereinafter, may be referred to as a component (c)). ), A thermosetting resin component (hereinafter, may be referred to as (d) component), and an elastomer (hereinafter, may be referred to as (e) component) are contained, and if necessary, Even if a polymer containing a structural unit derived from a compound having a carboxy group (hereinafter, may be referred to as component (f)) and a curing accelerator (hereinafter, may be referred to as component (g)) are further contained. Good.

Component (a): Metal filler The component (a) is a component used to enhance heat dissipation in a film-like adhesive. Examples of the component (a) include nickel particles, copper particles, silver particles, aluminum particles; particles in which the surface of core particles such as metal particles and resin particles is coated with a metal material. These may be used individually by 1 type or in combination of 2 or more type. Among these, the component (a) may be copper particles because it is more excellent in heat dissipation. The shape of the component (a) is not particularly limited, and may be, for example, flaky or spherical.

The average particle size of the component (a) may be 0.01 to 10 μm. When the average particle size of the component (a) is 0.01 μm or more, it is possible to prevent an increase in viscosity when the adhesive varnish is produced, and to contain a desired amount of the component (a) in the film-like adhesive. , There is a tendency that the wettability of the film-like adhesive to the adherend can be ensured and better adhesiveness can be exhibited. When the average particle size of the component (a) is 10 μm or less, the film formability is more excellent, and the conductivity due to the addition of the component (a) tends to be further improved. Further, by setting the range in such a range, the thickness of the film-like adhesive can be made thinner, the semiconductor chips can be highly laminated, and the component (a) protrudes from the film-like adhesive. There is a tendency that the occurrence of chip cracks due to the above can be prevented. The average particle size of the component (a) may be 0.1 μm or more, 1.0 μm or more, 2.0 μm or more, or 3.0 μm or more, and may be 9.0 μm or less, 8.0 μm or less, or 7.0 μm. It may be as follows. The average particle size of the component (a) means _{the particle size (D 50} ) when the ratio (volume fraction) to the volume of the entire component (a) is 50%. The average particle size (D ₅₀ ) of the component (a) is determined by a laser scattering method of a suspension in which the component (a) is suspended in water using a laser scattering type particle size measuring device (for example, Microtrac). It can be obtained by measuring.

The content of the component (a) may be 40% by mass or more based on the total amount of the film-like adhesive (the total amount of the components excluding the solvent, hereinafter the same). When the content of the component (a) is 40% by mass or more based on the total amount of the film-like adhesive, the thermal conductivity of the film-like adhesive can be improved, and as a result, the heat dissipation is improved. be able to. The content of the component (a) may be 45% by mass or more, 50% by mass or more, 55% by mass or more, or 60% by mass or more based on the total amount of the film-like adhesive. The upper limit of the content of the component (a) is not particularly limited, but may be 80% by mass or less, 75% by mass or less, or 70% by mass or less based on the total amount of the film-like adhesive.

Component (b): Solder The component (b) is a component that can be sintered with the component (a), and is a component used together with the component (a) to enhance heat dissipation in a film-like adhesive. The component (b) may be, for example, a tin alloy. Examples of the tin alloy include indium-tin (In-Sn), indium-tin-silver (In-Sn-Ag), tin-bismuth (Sn-Bi), and tin-bismuth-silver (Sn-Bi-Ag). , Tin-silver-copper (Sn-Ag-Cu), tin-copper (Sn-Cu) and the like. These may be used individually by 1 type or in combination of 2 or more type. Among these, the component (b) may be a tin alloy containing bismuth.

The melting temperature of the component (b) may be 180 ° C. or lower, 170 ° C. or lower, 160 ° C. or lower, or 150 ° C. or lower because sintering is possible at a low temperature (for example, 180 ° C. or lower). You may. The lower limit of the melting temperature of the component (b) is not particularly limited, but can be, for example, 120 ° C. or higher.

The content of the component (b) may be 10% by mass or more based on the total amount of the film-like adhesive. When the content of the component (b) is 10% by mass or more based on the total amount of the film-like adhesive, the heat dissipation of the film-like adhesive can be improved. The content of the component (a) may be 15% by mass or more, 20% by mass or more, or 25% by mass or more based on the total amount of the film-like adhesive. The upper limit of the content of the component (b) is not particularly limited, but may be 50% by mass or less, 40% by mass or less, or 30% by mass or less based on the total amount of the film-like adhesive.

Component (c): Polyester The component (c) is a component that can mainly reduce the oxide film on the metal surface of the components (a) and (b). The component (c) can be used without particular limitation as long as it is a compound having two or more hydroxy groups in the molecule. Examples of the component (c) include glycerin, trimethylolpropane, trimethylolethane, 1,2,6-hexanetriol, 1,2,4-butantriol, sorbitol, pentaerythritol and the like. These may be used individually by 1 type or in combination of 2 or more type. The component (c) is preferably higher than the boiling point of the solvent used later from the viewpoint of being present in the film-like adhesive. The component (c) may be glycerin because it has a relatively high boiling point.

The content of the component (c) may be 0.1% by mass or more based on the total amount of the component (a) and the component (b). When the content of the component (c) is 0.1% by mass or more based on the total amount of the component (a) and the component (b), the oxide film on the metal surface of the component (a) and the component (b) is formed. There is a tendency for more reduction. The content of the component (c) may be 0.3% by mass or more, 0.5% by mass or more, or 0.8% by mass or more based on the total amount of the component (a) and the component (b). It may be 10% by mass or less, 5% by mass or less, or 3% by mass or less.

Component (d): Thermosetting resin component The component (d) is a component having a property of forming a three-dimensional bond between molecules and curing by heating or the like. The component (d) is not particularly limited as long as it is a component that exhibits an adhesive action after curing, but for example, an epoxy resin (hereinafter, may be referred to as a component (d-1)) and an epoxy resin curing agent (hereinafter, may be referred to as a component). , (D-2) component may be used in combination.

Component (d-1): Epoxy resin The component (d-1) can be used without particular limitation as long as it has an epoxy group in the molecule. The component (d-1) may have two or more epoxy groups in the molecule. Examples of the component (d-1) include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolac type epoxy resin, and bisphenol F. Novorak type epoxy resin, stillben type epoxy resin, triazine skeleton containing epoxy resin, fluorene skeleton containing epoxy resin, triphenol methane type epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, biphenyl aralkyl type epoxy resin, naphthalene type epoxy resin, Examples thereof include dicyclopentadiene type epoxy resins, polyfunctional phenols, and polycyclic aromatic diglycidyl ether compounds such as anthracene. These may be used individually by 1 type or in combination of 2 or more type. Among these, the component (d-1) may be a bisphenol type epoxy resin from the viewpoint of heat resistance of the cured product and the like.

The component (d-1) may be an epoxy resin that is liquid at 25 ° C. By using such an epoxy resin, there is a tendency that a paste can be prepared without using a solvent described later when mixing with each component. Examples of commercially available epoxy resins liquid at 25 ° C. include EXA-830CRP (trade name, manufactured by DIC Corporation) and YDF-8170C (trade name, manufactured by Nippon Steel Chemical & Materials Co., Ltd.).

The epoxy equivalent of the component (d-1) is not particularly limited, but may be 90 to 300 g / eq, 110 to 290 g / eq, or 110 to 290 g / eq. When the epoxy equivalent of the component (d-1) is in such a range, it is easy to secure the fluidity of the adhesive composition when forming the film-like adhesive while maintaining the bulk strength of the film-like adhesive. There is a tendency.

The content of the component (d-1) may be 0.1% by mass or more, 1% by mass or more, 2% by mass or more, or 3% by mass or more, based on the total amount of the film-like adhesive, and is 15% by mass. % Or less, 12% by mass or less, 10% by mass or less, or 8% by mass or less.

Component (d-2): Epoxy resin curing agent The component (d-2) may be a phenol resin that can be a curing agent for the epoxy resin. The phenol resin can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule. Examples of the phenol resin include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol, and / or naphthols such as α-naphthol, β-naphthol and dihydroxynaphthalene, and formaldehyde and the like. Phenols such as novolak-type phenol resin, allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolac, and phenol obtained by condensing or co-condensing with a compound having an aldehyde group of Alternatively, phenol aralkyl resin synthesized from naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl, naphthol aralkyl resin, biphenyl aralkyl type phenol resin, phenyl aralkyl type phenol resin and the like can be mentioned. These may be used individually by 1 type or in combination of 2 or more type.

The hydroxyl group equivalent of the phenol resin may be 40 to 300 g / eq, 70 to 290 g / eq, or 100 to 280 g / eq. When the hydroxyl group equivalent of the phenol resin is 40 g / eq or more, the storage elastic modulus of the film tends to be further improved, and when it is 300 g / eq or less, it is possible to prevent problems due to the generation of foaming, outgas, etc. ..

The ratio of the epoxy equivalent of the epoxy resin as the component (d-1) to the hydroxyl group equivalent of the phenol resin as the component (d-2) (the epoxy equivalent of the epoxy resin as the component (d-2) / (d-1) The hydroxyl group equivalent of the component phenol resin) is 0.30 / 0.70 to 0.70 / 0.30, 0.35 / 0.65 to 0.65 / 0.35, 0 from the viewpoint of curability. It may be .40 / 0.60 to 0.60 / 0.40, or 0.45 / 0.55 to 0.55 / 0.45. When the equivalent amount ratio is 0.30 / 0.70 or more, more sufficient curability tends to be obtained. When the equivalent equivalent ratio is 0.70 / 0.30 or less, it is possible to prevent the viscosity from becoming too high, and it is possible to obtain more sufficient fluidity.

The content of the component (d-2) may be 0.1% by mass or more, 1% by mass or more, 2% by mass or more, or 2.5% by mass or more, based on the total amount of the film-like adhesive. It may be 15% by mass or less, 12% by mass or less, 10% by mass or less, or 8% by mass or less.

Component (e): Elastomer The component (e) includes, for example, a polyimide resin, an acrylic resin, a urethane resin, a polyphenylene ether resin, a polyetherimide resin, a phenoxy resin, a modified polyphenylene ether resin, or the like, and has a crosslinkable functional group. Some have. Here, the acrylic resin means a polymer containing a structural unit derived from a (meth) acrylic acid ester. The acrylic resin may be a polymer containing a structural unit derived from a (meth) acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxy group as a structural unit. Further, the acrylic resin may be an acrylic rubber such as a copolymer of (meth) acrylic acid ester and acrylonitrile. These may be used individually by 1 type or in combination of 2 or more type.

Examples of commercially available acrylic resins include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, HTR-860P-3, HTR-860P-3CSP, and HTR-860P-3CSP-3DB ( (Made by Nagase ChemteX Corporation) and the like.

The glass transition temperature (Tg) of the component (e) may be −50 to 50 ° C. or -30 to 20 ° C. When the Tg of the acrylic resin is −50 ° C. or higher, the tackiness of the film-like adhesive is lowered, so that the handleability tends to be further improved. When the Tg of the acrylic resin is 50 ° C. or lower, the fluidity of the adhesive composition when forming the film-like adhesive tends to be more sufficiently secured. Here, the glass transition temperature (Tg) of the component (e) means a value measured using a DSC (thermal differential scanning calorimeter) (for example, manufactured by Rigaku Co., Ltd., trade name: Thermo Plus 2).

The weight average molecular weight (Mw) of the component (e) may be 50,000 to 1.2 million, 100,000 to 1.2 million, or 300,000 to 900,000. When the weight average molecular weight of the component (b) is 50,000 or more, the film forming property tends to be superior. When the weight average molecular weight of the component (b) is 1.2 million or less, the fluidity of the adhesive composition when forming the film-like adhesive tends to be more excellent. The weight average molecular weight (Mw) is a value measured by gel permeation chromatography (GPC) and converted using a calibration curve using standard polystyrene.

In the present specification, the measuring device for the weight average molecular weight (Mw), the measuring conditions, and the like are as follows.
Pump: L-6000 (manufactured by Hitachi, Ltd.)
Columns: Gelpack GL-R440 (manufactured by Hitachi Kasei Co., Ltd.), Gelpack GL-R450 (manufactured by Hitachi Kasei Co., Ltd.), and Gelpack GL-R400M (manufactured by Hitachi Kasei Co., Ltd.) (10.7 mm each (10.7 mm each) Column eluent in which (diameter) x 300 mm) are connected in this order: tetrahydrofuran (hereinafter referred to as "THF")
Sample: Solution of 120 mg of sample dissolved in 5 mL of THF Flow rate: 1.75 mL / min

The content of the component (e) may be 0.1% by mass or more, 0.5% by mass or more, 1% by mass or more, or 1.5% by mass or more based on the total amount of the film-like adhesive. It may be 10% by mass or less, 8% by mass or less, 6% by mass or less, or 5% by mass or less.

Component (f): Polymer film-like adhesive containing a structural unit derived from a compound having a carboxy group. By further containing the component (f), the metal surface of the components (a) and (b) is mainly oxidized. The film can be reduced and removed more sufficiently. Further, the component (f) can form an ionomer-like ionic crosslinked structure by the metal ions derived from the components (a) and (b), and as a result, the surface strength of the film-like adhesive is further increased. It becomes possible to increase.

Since the compound having a carboxy group can be a constituent unit, it may be a compound having both a carboxy group and a polymerizable unsaturated bond. Examples of such a compound include (meth) acrylic acid, vinyl benzoic acid and the like. The content of the structural unit derived from the compound having a carboxy group (compound having both a carboxy group and a polymerizable unsaturated bond) in the component (f) is not particularly limited, but is, for example, 50% by mass or more and 70% by mass. % Or more, or 90% by mass or more.

The component (f) may further contain a structural unit derived from a compound copolymerizable with a compound having a carboxy group. Examples of such a compound include alkyl (meth) acrylate, styrene, 4-methylstyrene, vinylpyridine, vinylpyrrolidone, vinyl acetate, cyclohexylmaleimide, phenylmaleimide, maleic anhydride and the like. The content of the structural unit derived from the compound may be 50% by mass or less, 30% by mass or less, or 10% by mass or less.

The component (f) may be, for example, poly (meth) acrylic acid composed of (meth) acrylic acid because of its availability.

The weight average molecular weight (Mw) of the component (f) may be 10,000 to 300,000, 5,000 to 100,000, or 10,000 to 50,000. The weight average molecular weight (Mw) is a value measured by gel permeation chromatography (GPC) and converted using a calibration curve using standard polystyrene.

The content of the component (f) may be 0.1% by mass or more based on the total amount of the component (a) and the component (b). When the content of the component (f) is 0.1% by mass or more based on the total amount of the component (a) and the component (b), the oxide film on the metal surface of the component (a) and the component (b) is formed. There is a tendency for more reduction. The content of the component (f) may be 0.3% by mass or more, 0.5% by mass or more, or 0.8% by mass or more based on the total amount of the component (a) and the component (b). It may be 10% by mass or less, 5% by mass or less, or 3% by mass or less.

Component (g): Curing accelerator By further containing the component (g) in the film-like adhesive, there is a tendency that the adhesiveness and the connection reliability can be more compatible with each other. Examples of the component (g) include imidazoles and derivatives thereof, organophosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts and the like. These may be used individually by 1 type or in combination of 2 or more type. Among these, the component (g) may be imidazoles and derivatives thereof from the viewpoint of reactivity.

Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. These may be used individually by 1 type or in combination of 2 or more type.

The content of the component (g) may be 0.001 to 1% by mass based on the total amount of the film-like adhesive. When the content of the component (g) is in such a range, the adhesiveness and the connection reliability tend to be more compatible.

The film-like adhesive 10 may further contain a coupling agent, an antioxidant, a rheology control agent, a leveling agent, and the like as other components other than the components (a) to (g). Examples of the coupling agent include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3- (2-aminoethyl) aminopropyltrimethoxysilane, and the like. .. The content of other components may be 0.01 to 3% by mass based on the total amount of the film-like adhesive.

The solvent is not particularly limited as long as each component can be dispersed. Examples of the solvent include aromatic hydrocarbons such as toluene, xylene, mesityrene, cumene and p-simene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; tetrahydrofuran, 1,4-dioxane and the like. Cyclic ethers; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, γ-butyrolactone; Carbonated esters such as ethylene carbonate and propylene carbonate; amides such as N, N-dimethylformamide, N, N-dimethylacetamide and N-methyl-2-pyrrolidone, and monohydric alcohols such as methanol, ethanol, propanol and butanol. Can be mentioned. These may be used individually by 1 type or in combination of 2 or more type. The concentration of the solid component in the adhesive varnish may be 10 to 80% by mass based on the total mass of the adhesive varnish.

The adhesive varnish can be prepared by mixing or kneading the components (a) to (g), other components, and a solvent. The order of mixing or kneading each component is not particularly limited and can be set as appropriate. Mixing or kneading can be carried out by appropriately combining a disperser such as a normal stirrer, a raft machine, a triple roll, a ball mill, or a bead mill. After preparing the adhesive varnish, air bubbles in the varnish may be removed by vacuum degassing or the like.

The support film 20 is not particularly limited, and examples thereof include films such as polytetrafluoroethylene, polyethylene, polypropylene, polymethylpentene, polyethylene terephthalate, and polyimide. The thickness of the support film 20 may be, for example, 10 to 200 μm or 20 to 170 μm.

As a method of applying the adhesive varnish to the support film 20, a known method can be used. For example, a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, a curtain coating method and the like can be used. Can be mentioned. The conditions for heat drying can be appropriately selected from the conditions under which the solvent used is sufficiently volatilized, and can be, for example, 50 to 200 ° C. for 0.1 to 90 minutes.

The thickness of the film-like adhesive 10 can be appropriately adjusted according to the intended use, and may be, for example, 3 to 200 μm. When the thickness of the film-like adhesive 10 is 3 μm or more, the adhesive force tends to be sufficient, and when the thickness is 200 μm or less, the heat dissipation tends to be sufficient. The thickness of the film-like adhesive 10 may be 10 to 100 μm or 120 to 75 μm from the viewpoint of adhesive strength and thinning of the semiconductor device.

The thermal conductivity of the film-like adhesive 10 may be 1.5 W / mK or more. When the thermal conductivity of the film-shaped adhesive 10 is 1.5 W / mK or more, the dicing / die bonding integrated film tends to be more excellent in heat dissipation. The thermal conductivity of the die bonding film may be 1.6 W / mK or more, 1.8 W / mK or more, 1.9 W / mK or more, or 2.0 W / mK or more. The upper limit of the thermal conductivity of the film-shaped adhesive 10 is not particularly limited, but may be 30 W / mK or less. In addition, in this specification, "thermal conductivity" means the value calculated by the method described in Example.

[Dicing / die bonding integrated film]
FIG. 2 is a schematic cross-sectional view showing an embodiment of a dicing / die bonding integrated film. The dicing / die bonding integrated film 100 shown in FIG. 2 is arranged on the dicing tape 50 having the base material 40 and the pressure-sensitive adhesive layer 30 provided on the base material 40 and the pressure-sensitive adhesive layer 30 of the dicing tape 50. The dicing film 10A (film-like adhesive 10) is provided. In the dicing / die bonding integrated film 100, the support film 20 may be provided on the dicing film 10A.

Examples of the base material 40 in the dicing tape 50 include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. Further, the base material 40 may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment, if necessary.

The pressure-sensitive adhesive layer 30 may be made of a pressure-sensitive adhesive used in the field of dicing tape, and may be made of a pressure-sensitive pressure-sensitive adhesive or an ultraviolet-curable pressure-sensitive adhesive. Good. When the pressure-sensitive adhesive layer 30 is made of an ultraviolet-curable pressure-sensitive adhesive, the pressure-sensitive adhesive layer 2 may have a property that the adhesiveness is lowered by irradiation with ultraviolet rays.

The dicing / die bonding integrated film 100 can be produced by preparing a dicing tape 50 and a dicing film 10A and attaching the dicing film 10A to the adhesive layer 30 of the dicing tape 50.

[Manufacturing method of semiconductor device (semiconductor package)]
The method for manufacturing a semiconductor device (semiconductor package) according to an embodiment includes a step of adhering a semiconductor chip and a support substrate (or adhering semiconductor chips to each other) using the above-mentioned die bonding film. FIG. 3 is a schematic cross-sectional view showing an embodiment of a method for manufacturing a semiconductor device. 3 (a), (b), (c), (d), (e), and (f) are cross-sectional views schematically showing each step. For the method of manufacturing the semiconductor device, refer to the step of attaching the die bonding film 10A (adhesive layer) of the above-mentioned die bonding / die bonding integrated film 100 to the semiconductor wafer W (wafer laminating step, FIGS. 3 (a) and 3 (b)). ), The step of separating the semiconductor wafer W, the die bonding film 10A (adhesive layer), and the pressure-sensitive adhesive layer 30 (dying step, see FIG. 3C), and, if necessary, the pressure-sensitive adhesive layer 30. A step of irradiating ultraviolet rays (via the base material 40) (ultraviolet irradiation step, see FIG. 3D) and a semiconductor chip Wa (with an adhesive piece) to which a die bonding film piece 10a is attached from the adhesive layer 30a. A step of picking up the semiconductor chip 60) (pickup step, see FIG. 3E) and a step of adhering the semiconductor chip 60 with an adhesive piece to the support substrate 80 via the die bonding film piece 10a (semiconductor chip bonding step, (See FIG. 3 (f))).

<Wafer laminating process>
First, the dicing / die bonding integrated film 100 is placed in a predetermined device. Subsequently, the die bonding film 10A (adhesive layer) of the dicing / die bonding integrated film 100 is attached to the surface Ws of the semiconductor wafer W (see FIGS. 3A and 3B). The circuit surface of the semiconductor wafer W is preferably provided on the surface opposite to the surface Ws.

<Dicing process>
Next, the semiconductor wafer W, the die bonding film 10A (adhesive layer), and the pressure-sensitive adhesive layer 30 are diced (see FIG. 3C). At this time, a part of the base material 40 may be diced. As described above, the dicing / die bonding integrated film 100 also functions as a dicing sheet.

<Ultraviolet irradiation process>
When the pressure-sensitive adhesive layer 30 is made of an ultraviolet-curable pressure-sensitive adhesive, the pressure-sensitive adhesive layer 30 may be irradiated with ultraviolet rays (via the base material 40), if necessary (FIG. 3 (FIG. 3). d) See). In the case of an ultraviolet curable adhesive, the adhesive layer 30 is cured, and the adhesive force between the adhesive layer 30 and the die bonding film 10A (adhesive layer) can be reduced. In ultraviolet irradiation, it is preferable to use ultraviolet rays having a wavelength of 200 to 400 nm. As for the ultraviolet irradiation conditions, it is preferable to adjust the illuminance and the irradiation amount to the range of 30 to 240 mW / cm ^{2 and the range of 50 to 500 mJ / cm 2, respectively.}

<Pickup process>
Next, by expanding the base material 40, the semiconductor chips 60 with adhesive pieces that have been diced are separated from each other, and the semiconductor chips 60 with adhesive pieces that are pushed up by the needle 72 from the base material 40 side are sucked by the suction collet 74. Then, it is picked up from the pressure-sensitive adhesive layer 30a (see FIG. 3E). The semiconductor chip 60 with an adhesive piece has a semiconductor chip Wa and a die bonding film piece 10a. The semiconductor chip Wa is a semiconductor wafer W that is individualized by dicing, and the die bonding film piece 10a is a die bonding film 10A that is individualized by dicing. Further, the pressure-sensitive adhesive layer 30a is obtained by individualizing the pressure-sensitive adhesive layer 30 by dicing. The pressure-sensitive adhesive layer 30a may remain on the base material 40 when the semiconductor chip 60 with the adhesive piece is picked up. In the pick-up step, it is not always necessary to expand the base material 40, but the pick-up property can be further improved by expanding the base material 40.

The amount of push-up by the needle 72 can be appropriately set. Further, from the viewpoint of ensuring sufficient pick-up property even for ultra-thin wafers, for example, two-stage or three-stage push-up may be performed. Further, the semiconductor chip 60 with the adhesive piece may be picked up by a method other than the method using the suction collet 74.

<Semiconductor chip bonding process>
After picking up the semiconductor chip 60 with the adhesive piece, the semiconductor chip 60 with the adhesive piece is bonded to the support substrate 80 via the die bonding film piece 10a by thermocompression bonding (see FIG. 3 (f)). A plurality of semiconductor chips 60 with adhesive pieces may be adhered to the support substrate 80. The die bonding film piece 10a can be formed by thermocompression bonding to form a cured product of the die bonding film piece 10a.

The semiconductor device manufacturing method includes, if necessary, a step of electrically connecting the semiconductor chip Wa and the support substrate 80 by a wire bond, and a semiconductor chip using a resin encapsulant on the surface 80A of the support substrate 80. It may further include a step of sealing Wa with a resin.

[Semiconductor device (semiconductor package)]
FIG. 4 is a schematic cross-sectional view showing an embodiment of a semiconductor device. The semiconductor device 200 shown in FIG. 4 is provided between the semiconductor chip Wa, the support substrate 80 on which the semiconductor chip Wa is mounted, and the semiconductor chip Wa and the support substrate 80, and adheres the semiconductor chip Wa and the support substrate 80. It includes an adhesive member 10c. The adhesive member 10c is a cured product of the die bonding film (die bonding film piece 10a). The semiconductor device 200 shown in FIG. 4 can be manufactured by going through the above steps. In the semiconductor device 200, the semiconductor chip Wa and the support substrate 80 may be electrically connected by a wire bond 70. In the semiconductor device 200, the semiconductor chip Wa may be resin-sealed on the surface 80A of the support substrate 80 by using the resin encapsulant 92. Solder balls 94 may be formed on the surface of the support substrate 80 opposite to the surface 80A for electrical connection with the external substrate (motherboard).

Hereinafter, the present disclosure will be described with reference to Examples, but the present disclosure is not limited to these Examples.

<Preparation of adhesive varnish>
A mixture was obtained by adding a solvent to the components (d) and (e) and stirring them with the symbols and composition ratios (unit: parts by mass) shown in Table 1. The components (a) and (b) were added to the obtained mixture, and the mixture was stirred using a disper blade and dispersed until each component became uniform to obtain a dispersion liquid. Next, separately, an ethanol solution in which the component (c) and the component (f) are dissolved in the minimum amount of solvent (ethanol) is prepared, and the component (g) and the ethanol solution are added to the dispersion to make each component uniform. Adhesive varnishes A to D were obtained by dispersing up to.

The symbols of each component in Table 1 mean the following.

(A) Ingredients-UCI-8 (trade name, manufactured by DOWA Electronics Co., Ltd., copper powder, shape: spherical, average particle size (laser 50% particle size (D ₅₀ )): 6.3 μm)
(B) Ingredients-Sn-58Bi (trade name, manufactured by Senju Metal Industry Co., Ltd., tin content: 42% by mass, bismuth content: 58% by mass, melting temperature: 139 to 141 ° C.)
(C) Ingredients-glycerin (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.)
(D) Ingredient (d-1) Ingredient-EXA-830CRP (trade name, manufactured by DIC Corporation, bisphenol type epoxy resin, epoxy equivalent: 159 g / eq, liquid at 25 ° C.)
(D-2) Ingredient ・ HE-100C (trade name, manufactured by Air Water Inc., phenylarakil-type phenol resin, hydroxyl group equivalent: 170 g / eq)
(E) Ingredients-HTR-860P-3CSP (trade name, manufactured by Nagase ChemteX Corporation, glycidyl group-containing acrylic rubber, weight average molecular weight: 800,000, Tg: -7 ° C)
(F) Ingredients-Polyacrylic acid (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., weight average molecular weight: 25,000)
(G) Ingredient ・ 2PZ-CN (trade name, manufactured by Shikoku Chemicals Corporation, 1-cyanoethyl-2-phenylimidazole)

(Example 1)
<Making a film-like adhesive>
Adhesive varnish A was used to prepare the film-like adhesive. The vacuum-defoamed adhesive varnish A was applied onto a polyethylene terephthalate (PET) film (thickness 38 μm) that had been subjected to a mold release treatment as a support film. The applied varnish was heat-dried at 90 ° C. for 5 minutes and then at 140 ° C. for 5 minutes in two steps to obtain a film-like adhesive of Example 1 having a thickness of 20 μm in a B stage state on a support film. ..

<Evaluation of flexibility>
The flexibility was evaluated using the film-like adhesive of Example 1. The film-like adhesive was bent together with the support film at 180 ° C., and the case where the film-like adhesive was not cracked was evaluated as "A" and the case where it was cracked was evaluated as "B". The results are shown in Table 2.

<Evaluation of laminate property>
The laminateability was evaluated using two film-like adhesives of Example 1. The film-like adhesives were superposed on each other and laminated with a hot roll laminator at 70 ° C. to obtain a laminate. In the laminated body, the case where the support film on one side could be peeled off was evaluated as "A", and the case where the film-like adhesives were peeled off was evaluated as "B". The results are shown in Table 2.

<Measurement of thermal conductivity>
(Preparation of laminate)
Using Leon13DX (manufactured by Rummy Corporation), a film-like adhesive was laminated at 70 ° C. so as to have a thickness of 100 μm or more to obtain a laminate.

(Preparation of measurement sample)
The laminate was subjected to a thermal history at 110 ° C. for 30 minutes and 175 ° C. for 180 minutes to obtain a measurement sample.

(Measurement of thermal conductivity)
The thermal conductivity of the measurement sample was calculated by the following formula. The results are shown in Table 2.
Thermal conductivity (W / mK) = specific heat (J / kg · K) x thermal diffusivity (m ² / s) x specific gravity (kg / m ³ )
The specific heat, thermal diffusivity, and specific gravity were measured by the following methods. Higher thermal conductivity means better heat dissipation.

(Measurement of specific heat (25 ° C))
-Measuring device: Differential scanning calorimetry device (manufactured by PerkinElmer Japan Co., Ltd., product name: DSC8500)
・ Reference substance: Sapphire ・ Temperature temperature: 10 ℃ / min ・ Temperature range: 20 ℃ ～ 100 ℃

(Measurement of thermal diffusivity)
-Measuring device: Thermal diffusivity measuring device (manufactured by Netch Japan Co., Ltd., product name: LFA467 HyperFlash)
-Measurement sample processing: Blackening both sides of the measurement sample with carbon spray-Measurement method: xenon flash method-Measurement atmosphere temperature: 25 ° C

(Measurement of specific gravity)
-Measuring device: Electronic hydrometer (manufactured by Alpha Mirage Co., Ltd., product name: SD200L)
・ Measurement method: Archimedes method

(Example 2)
A film-like adhesive of Example 2 was obtained in the same manner as in Example 1 except that the adhesive varnish A was changed to the adhesive varnish B. The same evaluation as in Example 1 was performed using the film-like adhesive of Example 2. The results are shown in Table 2.

(Comparative Example 1)
A film-like adhesive of Comparative Example 1 was obtained in the same manner as in Example 1 except that the adhesive varnish A was changed to the adhesive varnish C. The same evaluation as in Example 1 was performed using the film-like adhesive of Comparative Example 1. The results are shown in Table 2.

(Comparative Example 2)
A film-like adhesive of Comparative Example 2 was obtained in the same manner as in Example 1 except that the adhesive varnish A was changed to the adhesive varnish D. The same evaluation as in Example 1 was performed using the film-like adhesive of Comparative Example 2. The results are shown in Table 2.

As shown in Table 2, the film-like adhesive of the example had sufficient properties as a film and was superior in thermal conductivity to the film-like adhesive of the comparative example. Further, from the comparison between Example 1 and Example 2, it was found that the thermal conductivity was further improved by the film-like adhesive containing the component (f). From the above results, it was confirmed that the film-like adhesive of the present disclosure has excellent heat dissipation.

10 ... film-like adhesive, 10A ... die bonding film, 10a ... die bonding film piece, 10c ... adhesive member, 20 ... support film, 30 ... adhesive layer, 40 ... base material, 50 ... dicing tape, 60 ... adhesive Clean-up semiconductor chip, 70 ... wire bond, 72 ... needle, 74 ... suction collet, 80 ... support substrate, 92 ... resin encapsulant, 94 ... solder ball, 100 ... dicing / die bonding integrated film, 200 ... semiconductor device.

Claims (8)

A die bonding film containing a metal filler, solder, a polyol, a thermosetting resin component, and an elastomer. The die bonding film according to claim 1, further containing a polymer containing a structural unit derived from a compound having a carboxy group. The die bonding film according to claim 1 or 2, wherein the melting temperature of the solder is 180 ° C. or lower. A method for manufacturing a semiconductor device, comprising a step of adhering a semiconductor chip and a support substrate using the die bonding film according to any one of claims 1 to 3. With semiconductor chips
A support substrate on which the semiconductor chip is mounted and
An adhesive member provided between the semiconductor chip and the support substrate and for adhering the semiconductor chip and the support substrate.
With
A semiconductor device in which the adhesive member is a cured product of the die bonding film according to any one of claims 1 to 3. A film-like adhesive containing a metal filler, solder, a polyol, a thermosetting resin component, and an elastomer. The film-like adhesive according to claim 6, further comprising a polymer containing a structural unit derived from a compound having a carboxy group. The film-like adhesive according to claim 6 or 7, wherein the melting temperature of the solder is 180 ° C. or lower.

Images