JP6374199B2 - Die bond film, dicing die bond film and laminated film - Google Patents

Description

The present invention relates to a die bond film, a dicing die bond film, and a laminated film.

A method of using a die bond film when bonding a semiconductor chip to an adherend such as a metal lead frame is known (see, for example, Patent Document 1).

In such a method, voids may occur in the die bond film after die bonding. The void reduces the reliability of the semiconductor device evaluated by moisture absorption reflow resistance, HAST (High Accelerated Stress Test), and the like, and causes a failure of the semiconductor device.

Japanese Patent Application Laid-Open No. 6-145639

Since the conventional die-bonding film contains a filler of about 500 nm, it is opaque. Therefore, in order to observe the void in the die bond film, an ultrasonic imaging device (SAT) is generally used. However, when observing with an ultrasonic imaging apparatus, it is necessary to immerse the semiconductor device in water, so that the semiconductor device is sacrificed for the test.

An object of the present invention is to solve the above-mentioned problems and to provide a die bond film, a dicing die bond film, and a laminated film capable of observing voids without sacrificing a semiconductor device.

The present invention relates to a die bond film having a haze of 0% to 25%. Since the die-bonding film of the present invention has high transparency, voids can be observed without using an ultrasonic imaging apparatus. Therefore, the semiconductor device can be observed without sacrificing, and the yield of the semiconductor device can be improved. In addition, defects in the semiconductor device can be reduced.

The die bond film of the present invention preferably has a transmittance of light having a wavelength of 600 nm exceeding 85%. If it exceeds 85%, voids can be observed visually.

The die bond film of the present invention preferably has a transmittance of light having a wavelength of 400 nm exceeding 85%. If it exceeds 85%, the void can be observed with a void detection device, specifically, an optical microscope device linked with an image identification program.

The die bond film of the present invention preferably has a light transmittance of more than 85% in the entire wavelength range of 400 nm to 600 nm. If it exceeds 85%, the void can be observed visually or with a void detector.

The present invention also provides a dicing die-bonding film comprising a base material and a dicing tape comprising an adhesive layer disposed on the base material, and a die bond film having a haze of 0% to 25% disposed on the adhesive layer. About.

The die bond film preferably has a light transmittance of a wavelength of 600 nm when stretched to 200%, which is 5% or more lower than a light transmittance of a wavelength of 600 nm when not stretched. Since it becomes easy to visually recognize the die bond film by stretching the die bond film, the presence or absence of the die bond film can be easily confirmed.

By the way, if the transparency of the die bond film is high, it is difficult to know the position of the die bond film, so that it is difficult to align the die bond film and the dicing tape. In addition, abnormalities in the shape of the die bond film may not be detected during quality inspection.

Therefore, it is preferable that the die bond film includes a pasting portion for pasting the semiconductor wafer and a non-pasting portion disposed around the pasting portion, and a mark is provided in the non-pasting portion. The mark is preferably optically recognizable. When the mark is provided in the non-sticking portion, the positioning can be easily performed when the die-bonding film and the dicing tape are stuck together. Moreover, the presence or absence of the die bond film can be easily determined. Moreover, when performing a quality inspection, abnormality of the shape of a die-bonding film may be detectable.

The substrate preferably has a light transmittance of 0% to 20% in the entire region having a wavelength of 400 nm to 600 nm. Thereby, when bonding a dicing die-bonding film and a semiconductor wafer, it can align on the basis of the edge of a base material.

A base material can define both surfaces by the 1st main surface which contact | connects an adhesive layer, and the 2nd main surface facing the 1st main surface. The surface roughness Ra of the second main surface is preferably 0.5 μm to 5 μm. Thereby, the light transmittance of a base material can be reduced.

The present invention also relates to a laminated film including a separator and a dicing die bond film disposed on the separator.

It is preferable that a separator is provided with the outer peripheral part arrange | positioned in the outer periphery of the laminated part which contact | connected the die-bonding film, and the laminated part. It is preferable that a mark is provided on the outer peripheral portion. Moreover, it is preferable that the mark is provided in the edge of the laminated part. When the outer peripheral part and / or the edge of the laminated part are provided with cuts, the die bond film and the dicing tape can be easily aligned.

The mark is preferably a notch. For the reason that the position can be easily recognized, the depth of the cut is preferably 5 μm to 45 μm.

ADVANTAGE OF THE INVENTION According to this invention, the die-bonding film, dicing die-bonding film, and laminated film which can observe a void without sacrificing a semiconductor device can be provided.

It is a schematic sectional drawing of a die-bonding film. It is a schematic sectional drawing of a dicing die-bonding film. It is a schematic plan view of a laminated film. It is a schematic sectional drawing which expands and shows a laminated film partially. It is sectional drawing which shows the outline of a mode that the semiconductor wafer has been arrange | positioned on a dicing die-bonding film. It is sectional drawing which shows the outline of a mode that the semiconductor wafer was separated into pieces. It is a schematic sectional drawing of a to-be-adhered body with a semiconductor chip. It is a schematic sectional drawing of a semiconductor device. It is a schematic sectional drawing of the die-bonding film which concerns on the modification 1. It is a schematic sectional drawing of the laminated film which concerns on the modification 2. It is a schematic sectional drawing of the laminated | multilayer film concerning the modification 3. It is a schematic sectional drawing of the laminated | multilayer film concerning the modification 4.

The present invention will be described in detail below with reference to embodiments, but the present invention is not limited only to these embodiments.

[Embodiment 1]
(Die bond film 3)
As shown in FIG. 1, the die bond film 3 is in the form of a film. Since the die bond film 3 has high transparency, a void can be observed without using an ultrasonic imaging apparatus. Therefore, the semiconductor device can be observed without sacrificing, and the yield of the semiconductor device can be improved. In addition, defects in the semiconductor device can be reduced.

The haze of the die bond film 3 is 25% or less, preferably 20% or less, more preferably 15% or less, and particularly preferably 10% or less. Since it is 25% or less, transparency is high and voids can be observed without using an ultrasonic imaging apparatus. The minimum of the haze of the die-bonding film 3 is not specifically limited, For example, it is 0% or more. The lower limit of the haze of the die bond film 3 may be 0.5% or more, for example.
In addition, haze can be measured by the method as described in an Example.

Haze can be controlled by an inorganic filler. For example, haze can be reduced by not blending an inorganic filler and using an inorganic filler having a small average particle diameter.

In the die bond film 3, the transmittance of light having a wavelength of 600 nm is preferably more than 85%, more preferably 90% or more. If it exceeds 85%, voids can be observed visually. In addition, an optical microscope etc. can be used for observation.

The transmittance of light having a wavelength of 600 nm can be controlled by the particle size of the filler. For example, the transmittance exceeding 85% can be obtained by reducing the particle size of the filler.

In the die bond film 3, it is preferable that the transmittance of light having a wavelength of 400 nm exceeds 85%. If it exceeds 85%, the void can be observed with a void detection device, specifically, an optical microscope or the like.

The transmittance of light having a wavelength of 400 nm can be controlled by the particle size of the filler. For example, the transmittance exceeding 85% can be obtained by reducing the particle size of the filler.

In the die-bonding film 3, it is preferable that the light transmittance in the whole range of wavelengths from 400 nm to 600 nm exceeds 85%. If it exceeds 85%, the void can be observed visually or with a void detector.

The light transmittance can be measured by the method described in Examples.

In the die bond film 3, the transmittance of light having a wavelength of 600 nm when stretched to 200% is preferably 5% or more lower than the transmittance of light having a wavelength of 600 nm when not stretched. Since it becomes easy to visually recognize the die bond film 3 by stretching the die bond film 3, the presence or absence of the die bond film 3 can be easily confirmed. In the dicing die bond film, the presence or absence of the die bond film 3 can be easily confirmed by stretching the dicing die bond film. In addition, it is guessed that the transmittance | permeability falls because directionality arises in the polymer contained in the die-bonding film 3 by stretching.

In the die-bonding film 3, the transmittance of light having a wavelength of 600 nm when stretched to 200% is preferably 70% or less, more preferably 60% or less. The presence or absence of the die-bonding film 3 can be easily confirmed as it is 70% or less. The lower limit of the transmittance of light having a wavelength of 600 nm in a state stretched to 200% is not particularly limited, but is, for example, 5%.

In the die-bonding film 3, the transmittance of light having a wavelength of 600 nm when stretched to 5% is preferably 75% or more, more preferably 80% or more. If it is 80% or more, transparency can be maintained even after expansion.

The die bond film 3 preferably has thermosetting properties.

The die bond film 3 preferably contains a thermoplastic resin. As thermoplastic resins, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplasticity Examples thereof include polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.

The acrylic resin is not particularly limited, and includes one or more esters of acrylic acid or methacrylic acid ester having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. And a polymer (acrylic copolymer). Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, and dodecyl group.

In addition, the other monomer forming the polymer (acrylic copolymer) is not particularly limited, and for example, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid Or a carboxyl group-containing monomer such as crotonic acid, an acid anhydride monomer such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, (meth ) 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4 -Hydroxymethylcyclo Hydroxyl group-containing monomers such as (xyl) -methyl acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate Alternatively, a sulfonic acid group-containing monomer such as (meth) acryloyloxynaphthalene sulfonic acid or the like, or a phosphoric acid group-containing monomer such as 2-hydroxyethylacryloyl phosphate may be used.

Among the acrylic resins, those having a weight average molecular weight of 100,000 or more are preferable, those having 300,000 to 3,000,000 are more preferable, and those having 500,000 to 2,000,000 are more preferable. It is because it is excellent in adhesiveness and heat resistance in the said numerical range. The weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene.

The content of the thermoplastic resin in the die bond film 3 is preferably 5% by weight or more, more preferably 10% by weight or more, and further preferably 30% by weight or more. The content of the thermoplastic resin is preferably 90% by weight or less, more preferably 80% by weight or less, and still more preferably 70% by weight or less.

The die bond film 3 preferably contains a thermosetting resin. Thereby, thermal stability can be improved.

Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. In particular, an epoxy resin containing a small amount of ionic impurities that corrode semiconductor elements is preferable. Moreover, a phenol resin is preferable as the curing agent for the epoxy resin.

The epoxy resin is not particularly limited. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type. Bifunctional epoxy resins such as ortho-cresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., and epoxy resins such as hydantoin type, trisglycidyl isocyanurate type, or glycidylamine type are used. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance.

The phenol resin acts as a curing agent for the epoxy resin. For example, a novolak type phenol resin such as a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a tert-butylphenol novolak resin, a nonylphenol novolak resin, or a resol type phenol resin. And polyoxystyrene such as polyparaoxystyrene. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

The blending ratio of the epoxy resin and the phenol resin is preferably blended so that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured product are likely to deteriorate.

The content of the thermosetting resin in the die bond film 3 is preferably 5% by weight or more, more preferably 10% by weight or more, and further preferably 30% by weight or more. The content of the thermosetting resin is preferably 90% by weight or less, more preferably 80% by weight or less, and still more preferably 70% by weight or less.

The die bond film 3 may include an inorganic filler. In order to improve transparency, it is preferable to use an inorganic filler having a small average particle diameter.

The average particle size of the inorganic filler is preferably 150 nm or less, more preferably 100 nm or less, still more preferably 80 nm or less, and particularly preferably 50 nm or less. The transparency of the die-bonding film 3 can be improved as it is 150 nm or less. On the other hand, the average particle size of the inorganic filler is preferably 10 nm or more, more preferably 25 nm or more. When the thickness is 10 nm or more, it is possible to prevent a decrease in transmittance due to aggregation of the filler.
The average particle diameter can be derived by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.

Examples of the inorganic filler include quartz glass, talc, silica (such as fused silica and crystalline silica), alumina, aluminum nitride, silicon nitride, and boron nitride. As the inorganic filler, those having conductivity can also be suitably used. Examples of the conductive inorganic filler include solder, nickel, copper, silver, and gold. Among these, silica and alumina are preferable, and silica is more preferable because the linear expansion coefficient can be satisfactorily reduced.

As silica, silica powder is preferable, and fused silica powder is more preferable. Examples of the fused silica powder include spherical fused silica powder and crushed fused silica powder. From the viewpoint of fluidity, spherical fused silica powder is preferable.

The content of the inorganic filler in the die bond film 3 is preferably 10% by weight or more, more preferably 30% by weight or more. On the other hand, the content of the inorganic filler is preferably 90% by weight or less, more preferably 80% by weight or less, and still more preferably 70% by weight or less.

In addition to the above components, the die bond film 3 may appropriately contain a compounding agent generally used for film production, such as a crosslinking agent.

The die bond film 3 can be manufactured by a normal method. For example, an adhesive composition solution containing each of the above components is prepared, and the adhesive composition solution is applied on a base separator so as to have a predetermined thickness to form a coating film, and then the coating film is dried. Thus, the die bond film 3 can be manufactured.

Although it does not specifically limit as a solvent used for adhesive composition solution, The organic solvent which can melt | dissolve, knead | mix or disperse | distribute each said component uniformly is preferable. Examples thereof include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone, toluene, xylene, and the like. The application method is not particularly limited. Examples of the solvent coating method include a die coater, a gravure coater, a roll coater, a reverse coater, a comma coater, a pipe doctor coater, and screen printing. Of these, a die coater is preferable in terms of high uniformity of coating thickness.

As the base material separator, polyethylene terephthalate (PET), polyethylene, polypropylene, a plastic film or paper whose surface is coated with a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate release agent can be used. Examples of the method for applying the adhesive composition solution include roll coating, screen coating, and gravure coating. Moreover, the drying conditions of a coating film are not specifically limited, For example, it can carry out in drying temperature 70-160 degreeC and drying time 1-5 minutes.

As a method for producing the die bond film 3, for example, a method for producing the die bond film 3 by mixing the respective components with a mixer and press-molding the obtained mixture is also suitable. A planetary mixer etc. are mentioned as a mixer.

The thickness of the die bond film 3 is not particularly limited, but is preferably 5 μm or more, and more preferably 15 μm or more. When the thickness is less than 5 μm, a portion where the warped semiconductor wafer or the semiconductor chip does not adhere may occur, and the adhesion area may become unstable. Further, the thickness of the die bond film 3 is preferably 100 μm or less, and more preferably 50 μm or less. If it exceeds 100 μm, the die-bonding film 3 may protrude excessively due to the load of die attachment, and the pad may be contaminated.

The die bond film 3 can be used for manufacturing a semiconductor device. Specifically, it can be used for bonding an adherend and a semiconductor chip. Examples of the adherend include a lead frame, an interposer, and a semiconductor chip.

The die bond film 3 is preferably used in the form of a dicing die bond film. When used in this form, it is possible to handle a semiconductor wafer attached to a dicing die-bonding film and reduce the chance of handling the semiconductor wafer alone.

(Dicing die bond film 10)
As shown in FIG. 2, the dicing die bond film 10 includes a dicing tape 1 and a die bond film 3 disposed on the dicing tape 1.

The dicing tape 1 includes a base material 11 and an adhesive layer 12 arranged on the base material 11. The die bond film 3 is disposed on the pressure-sensitive adhesive layer 12.

In the base material 11, it is preferable that the transmittance | permeability of the light ray in the whole area | region of wavelength 400nm -600nm is low. This is because when the dicing die-bonding film 10 and the semiconductor wafer 4 are bonded together, alignment can be performed with reference to the edge of the substrate 11 or the like. The light transmittance in the entire region of wavelength 400 nm to 600 nm is preferably 0% to 20%, more preferably 0% to 10%. When it is 20% or less, alignment can be performed with reference to the edge of the substrate 11 or the like.

The base material 11 is defined on both sides by a first main surface 11a in contact with the pressure-sensitive adhesive layer 12 and a second main surface 11b opposed to the first main surface 11a. The surface roughness Ra of the second major surface 11b is preferably 0.5 μm or more, more preferably 1 μm or more. If the thickness is 0.5 μm or more, the light is scattered and becomes opaque, so that the position can be recognized by the sensor. On the other hand, the upper limit of the surface roughness Ra of the second main surface 11b is not particularly limited. The upper limit of the surface roughness Ra of the second major surface 11b is, for example, 5 μm.

Examples of the base material 11 include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, and polymethylpentene. Polyolefin, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene -Hexene copolymers, polyesters such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamid , Polyphenyl sulphates id, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), and paper.

The base material 11 may contain a dye or a pigment in order to facilitate position recognition.

It is preferable that the substrate 11 also has ultraviolet transparency.

The surface of the base material 11 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed.

The thickness of the substrate 11 is not particularly limited and can be appropriately determined, but is generally about 5 μm to 200 μm.

It does not restrict | limit especially as an adhesive used for formation of the adhesive layer 12, For example, common pressure sensitive adhesives, such as an acrylic adhesive and a rubber adhesive, can be used. As pressure-sensitive adhesives, acrylic adhesives based on acrylic polymers are used as the base polymer from the standpoint of cleanability of electronic components that are difficult to contaminate such as semiconductor wafers and glass with organic solvents such as ultrapure water and alcohol. preferable.

Examples of the acrylic polymer include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, isopropyl ester). Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester, C1-C30, especially C4-C18 linear or branched alkyl esters of alkyl groups such as octadecyl ester and eicosyl ester) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, etc. One or acrylic polymer using two or more of the monomer component cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

The acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. May be. Examples of such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Sti Contains sulfonic acid groups such as sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalene sulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

Furthermore, since the acrylic polymer is cross-linked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be carried out by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, it is preferable that the content of the low molecular weight substance is small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.

In addition, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive. Generally, it is preferable to add about 5 parts by weight or less, and further 0.1 to 5 parts by weight with respect to 100 parts by weight of the base polymer. Furthermore, additives such as various conventionally known tackifiers and anti-aging agents may be used for the pressure-sensitive adhesive, if necessary, in addition to the above components.

The pressure-sensitive adhesive layer 12 can be formed of a radiation curable pressure-sensitive adhesive. The radiation curable pressure-sensitive adhesive can easily reduce its adhesive strength by increasing the degree of crosslinking by irradiation with radiation such as ultraviolet rays.

As the radiation curable pressure-sensitive adhesive, those having a radiation curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. Examples of the radiation curable pressure-sensitive adhesive include an addition-type radiation curable pressure-sensitive adhesive in which a radiation-curable monomer component or oligomer component is blended with a general pressure-sensitive pressure-sensitive adhesive such as the acrylic pressure-sensitive adhesive or rubber-based pressure-sensitive adhesive. An agent can be illustrated.

Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation curable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a molecular weight in the range of about 100 to 30000 are suitable. The compounding amount of the radiation-curable monomer component or oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the adhesive strength of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of a base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

In addition to the additive-type radiation curable adhesive described above, the radiation curable pressure-sensitive adhesive has a carbon-carbon double bond in the polymer side chain or main chain or at the main chain terminal as a base polymer. Intrinsic radiation curable pressure sensitive adhesives using Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain many, so the oligomer components do not move through the adhesive over time and are stable. It is preferable because an adhesive layer having a layered structure can be formed.

As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, those having an acrylic polymer as a basic skeleton are preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

The method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted. However, the carbon-carbon double bond can be easily introduced into the polymer side chain for easy molecular design. . For example, after a monomer having a functional group is previously copolymerized with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.

Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. Moreover, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the preferable combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

As the intrinsic radiation curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer does not deteriorate the characteristics. Components and oligomer components can also be blended. The radiation-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

The radiation curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfo Aromatic sulfonyl chloride compounds such as luchloride; Photoactive oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

Examples of the radiation curable pressure-sensitive adhesive include photopolymerizable compounds such as an addition polymerizable compound having two or more unsaturated bonds and an alkoxysilane having an epoxy group disclosed in JP-A-60-196956. And rubber-based pressure-sensitive adhesives and acrylic pressure-sensitive adhesives containing photopolymerization initiators such as carbonyl compounds, organic sulfur compounds, peroxides, amines, and onium salt-based compounds.

The radiation curable pressure-sensitive adhesive layer 12 may contain a compound that is colored by radiation irradiation, if necessary. By including a compound to be colored in the pressure-sensitive adhesive layer 12 by irradiation with radiation, only the irradiated portion can be colored. The compound that is colored by irradiation with radiation is a colorless or light color compound before irradiation with radiation, but becomes a color by irradiation with radiation, and examples thereof include leuco dyes. The use ratio of the compound colored by radiation irradiation can be set as appropriate.

The thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, but is preferably about 1 to 50 μm from the viewpoint of preventing chipping of the chip cut surface and compatibility of fixing and holding the die bond film 3. Preferably it is 2-30 micrometers, Furthermore, 5-25 micrometers is preferable.

The die bond film 3 of the dicing die bond film 10 is usually protected by a separator.

The dicing die bond film 10 can be manufactured by a normal method. For example, the dicing die bond film 10 can be manufactured by bonding the adhesive layer 12 of the dicing tape 1 and the die bond film 3 together.

(Laminated film 2)
As shown in FIGS. 3 to 4, the laminated film 2 includes a separator 9 and a plurality of dicing die-bonding films 10 disposed on the separator 9. A plurality of dicing die-bonding films 10 are arranged on the separator 9 at regular intervals.

The separator 9 can function as a protective material for protecting the die bond film 3 until it is put into practical use. The separator 9 is peeled off when a semiconductor wafer is stuck on the die bond film 3. As the separator 9, a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine-type release agent, or a long-chain alkyl acrylate-type release agent can be used.

[Method for Manufacturing Semiconductor Device]
A method for manufacturing a semiconductor device will be described.

As shown in FIG. 5, a dicing die bond film 10 is pressure-bonded to the semiconductor wafer 4. Examples of the semiconductor wafer 4 include a silicon wafer, a silicon carbide wafer, and a compound semiconductor wafer. Examples of compound semiconductor wafers include gallium nitride wafers.

Examples of the crimping method include a method of pressing with a pressing means such as a crimping roll.

The pressing temperature (sticking temperature) is preferably 35 ° C. or higher, and more preferably 37 ° C. or higher. The upper limit of the pressure bonding temperature is preferably lower, preferably 50 ° C. or lower, more preferably 45 ° C. or lower. By crimping at a low temperature, it is possible to prevent the thermal effect on the semiconductor wafer 4 and to suppress warping of the semiconductor wafer 4.

Moreover, it is preferable that it is 1 * 10 < ⁵ > Pa-1 * 10 < ⁷ > Pa, and it is more preferable that a pressure is 2 * 10 < ⁵ > Pa-8 * 10 < ⁶ > Pa.

Next, as shown in FIG. 6, the semiconductor wafer 4 is diced. That is, the semiconductor wafer 4 is cut into a predetermined size and separated into pieces, and the semiconductor chip 5 is cut out. Dicing is performed according to a conventional method. Further, in this step, for example, a cutting method called full cut in which cutting is performed up to the dicing die bond film 10 can be adopted. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. Further, since the semiconductor wafer 4 is bonded and fixed by the dicing die bond film 10, chip chipping and chip jumping can be suppressed, and damage to the semiconductor wafer 4 can also be suppressed.

In order to peel off the semiconductor chip 5 adhered and fixed to the dicing die bond film 10, the semiconductor chip 5 is picked up. The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up individual semiconductor chips 5 from the dicing die-bonding film 10 side with a needle and picking up the pushed-up semiconductor chips 5 with a pick-up device can be mentioned.

Here, when the pressure-sensitive adhesive layer 12 is an ultraviolet curable type, the pickup is performed after the pressure-sensitive adhesive layer 12 is irradiated with ultraviolet rays. Thereby, the adhesive force with respect to the die-bonding film 3 of the adhesive layer 12 falls, and peeling of the semiconductor chip 5 becomes easy. As a result, the pickup can be performed without damaging the semiconductor chip 5. Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary.

As shown in FIG. 7, the picked-up semiconductor chip 5 is bonded and fixed to the adherend 6 via the die bond film 3 to obtain an adherend 61 with a semiconductor chip. The adherend 61 with a semiconductor chip includes an adherend 6, a die bond film 3 disposed on the adherend 6, and a semiconductor chip 5 disposed on the die bond film 3.

The die attach temperature is preferably 80 ° C. or higher, more preferably 90 ° C. or higher. The die attach temperature is preferably 150 ° C. or lower, more preferably 130 ° C. or lower. By setting the temperature to 150 ° C. or lower, it is possible to prevent warping.

Subsequently, the die bond film 3 is thermally cured by heating the adherend 61 with a semiconductor chip under pressure, and the semiconductor chip 5 and the adherend 6 are fixed. By thermally curing the die bond film 3 under pressure, voids existing between the die bond film 3 and the adherend 6 can be eliminated, and an area where the die bond film 3 contacts the adherend 6 is ensured. it can.

Examples of a method of heating under pressure include a method of heating the adherend 61 with a semiconductor chip disposed in a chamber filled with an inert gas.
The pressure of the pressurized atmosphere is preferably 0.5 kg / cm ² (4.9 × 10 ⁻² MPa) or more, more preferably 1 kg / cm ² (9.8 × 10 ⁻² MPa) or more, and further preferably 5 kg. / Cm ² (4.9 × 10 ⁻¹ MPa) or more. The void which exists between the die-bonding film 3 and the to-be-adhered body 6 can be easily lose | eliminated as it is 0.5 kg / cm < ² > or more. The pressure of the pressurized atmosphere is preferably 20kg ^/ cm 2 (1.96MPa), more preferably 18kg ^/ cm 2 (1.77MPa) or less, more preferably not more than 15kg ^/ cm 2 (1.47MPa). The protrusion of the die-bonding film 3 due to excessive pressurization can be suppressed when it is 20 kg / cm ² or less.

The heating temperature when heating under pressure is preferably 80 ° C or higher, more preferably 100 ° C or higher, still more preferably 120 ° C or higher, and particularly preferably 170 ° C or higher. When the temperature is 80 ° C. or higher, the die bond film 3 can have an appropriate hardness, and voids can be effectively eliminated by pressure curing. The heating temperature is preferably 260 ° C. or lower, more preferably 200 ° C. or lower, more preferably 180 ° C. or lower. The decomposition | disassembly of the die-bonding film 3 before hardening can be prevented as it is 260 degrees C or less.

The heating time is preferably 0.1 hour or longer, more preferably 0.2 hour or longer, and further preferably 0.5 hour or longer. When it is 0.1 hour or longer, the effect of pressurization can be sufficiently obtained. The heating time is preferably 24 hours or less, more preferably 3 hours or less, and even more preferably 1 hour or less.

As shown in FIG. 8, a wire bonding step of electrically connecting the tip of the terminal portion (inner lead) of the adherend 6 and the electrode pad on the semiconductor chip 5 with a bonding wire 7 is performed. As the bonding wire 7, for example, a gold wire, an aluminum wire or a copper wire is used. The temperature during wire bonding is preferably 80 ° C. or higher, more preferably 120 ° C. or higher, and the temperature is preferably 250 ° C. or lower, more preferably 175 ° C. or lower. The heating time is several seconds to several minutes (for example, 1 second to 1 minute). The connection is performed by a combination of vibration energy by ultrasonic waves and pressure energy by pressurization while being heated so as to be within the temperature range.

Subsequently, a sealing step for sealing the semiconductor chip 5 with the sealing resin 8 is performed. This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step is performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is preferably 165 ° C. or higher, more preferably 170 ° C. or higher, and the heating temperature is preferably 185 ° C. or lower, more preferably 180 ° C. or lower.

If necessary, the sealed material may be further heated (post-curing step). Thereby, the sealing resin 8 which is insufficiently cured in the sealing process can be completely cured. The heating temperature can be set as appropriate.

As described above, a method including the step of fixing the semiconductor chip 5 to the adherend 6 via the die bond film 3 and the step of curing the die bond film 3 after the step of fixing the semiconductor chip 5 to the adherend 6. Thus, the semiconductor device can be preferably manufactured.

(Modification 1)
As shown in FIG. 9, in the first modification, the die bond film 3 includes a pasting part 31 for pasting the semiconductor wafer 4 and a non-pasting part 32 arranged around the pasting part 31. A mark 301 is provided on the non-pasting portion 32. Since the mark 301 is provided in the non-sticking part 32, when the die-bonding film 3 and the dicing tape 1 are stuck together, it can be easily aligned. Further, the presence or absence of the die bond film 3 can be easily determined. Moreover, when performing a quality inspection, abnormality of the shape of the die-bonding film 3 may be detected.

The mark 301 can be recognized optically. For example, in the mark 301, the light transmittance in the entire region having a wavelength of 400 nm to 600 nm is preferably 0% to 20%, more preferably 0% to 10%. If it is 20% or less, the position can be easily recognized by the sensor.

The method of providing the mark 301 on the non-attached portion 32 is not particularly limited. For example, a method of providing the mark 301 by inkjet, a method of applying the mark 301 while forming a pattern when applying the die bond film 3, and a film Alternatively, there is a method of providing the mark 301 by attaching a tape.

(Modification 2)
As shown in FIG. 10, in Modification 2, the separator 9 includes a laminated portion 91 in contact with the die bond film 3, an outer peripheral portion 92 arranged on the outer periphery of the laminated portion 91, and a periphery arranged around the outer peripheral portion 92. Part 93 is provided. The laminated portion 91 is in contact with the die bond film 3. On the other hand, the outer peripheral portion 92 and the peripheral portion 93 are not in contact with the die bond film 3.

A cut 901 is provided in the entire outer peripheral portion 92. Since the notch 901 is provided in the outer peripheral part 92, when attaching the die-bonding film 3 and the dicing tape 1, it can align easily.

For the reason that the position can be easily recognized, the depth of the cut 901 is preferably 5 μm to 45 μm.

(Modification 3)
As shown in FIG. 11, in the third modification, a cut 901 is provided in a part of the outer peripheral portion 92.

(Modification 4)
As shown in FIG. 12, in the fourth modification, a cut 901 is provided on the entire edge of the laminated portion 91. Since the notch 901 is provided in the edge of the laminated part 91, when the die-bonding film 3 and the dicing tape 1 are bonded together, it can be aligned easily. Note that a cut 901 may be provided in a part of the edge of the stacked portion 91.

(Other)
The above-described modifications can be combined as appropriate.

EXAMPLES Hereinafter, although this invention is demonstrated in detail using an Example, this invention is not limited to a following example, unless the summary is exceeded.

The components used in the examples will be described.
Acrylic rubber: Teisan resin SG-P3 manufactured by Nagase ChemteX Corporation (acrylic ester copolymer containing epoxy group, Mw: 850,000, glass transition temperature: 12 ° C.)
Silica filler 1: YA050C manufactured by Admatechs (silica, average particle size: 50 nm)
Silica filler 2: SO-E1 manufactured by Admatechs (silica, average particle size: 250 nm)
Silica filler 3: SO-E2 manufactured by Admatechs (silica, average particle size: 500 nm)

[Production of dicing die bond film]
According to the blending ratio shown in Table 1, an acrylic rubber and a silica filler were dissolved and dispersed in methyl ethyl ketone (MEK) to obtain an adhesive composition solution having a viscosity suitable for coating. Then, after apply | coating the adhesive composition solution on the 50-micrometer-thick polyethylene terephthalate film (henceforth a mold release process film) by which the silicone mold release process was carried out, it was made to dry at 130 degreeC for 2 minutes, and a die bond film ( A thickness of 25 μm) was obtained.

The die bond film was affixed on the adhesive layer of a dicing tape (P2130G manufactured by Nitto Denko Corporation) at 25 ° C. to prepare a dicing die bond film.

[Evaluation]
The following evaluation was performed using a dicing die bonding film. The results are shown in Table 1.

(Haze)
The dicing tape was removed from the dicing die bonding film to obtain a die bond film.
The die bond film was set in a sample chamber of a turbidimeter (NDH2000 manufactured by Nippon Denshoku Industries Co., Ltd.), and haze was measured using a light source D65.

(Light transmittance of die bond film)
The dicing tape was removed from the dicing die bonding film to obtain a die bond film.
A die-bonding film is fixed to a film holder (FLH-741, manufactured by Shimadzu Corporation), and an ultraviolet-visible-near-infrared spectrophotometer (V-670DS manufactured by JASCO Corporation) is used to measure 2000 nm / min, spot The parallel transmittance was measured with a diameter of 2 mm (diameter) and a measurement range of 350 to 800 nm.

(Light transmittance of die-bonded film stretched by 200%)
The dicing tape was removed from the dicing die bonding film to obtain a die bond film.
A test film having a length of 2 cm, a width of 4 cm, and a thickness of 25 μm was cut out from the die bond film. Two polyimide tapes were attached to the test film with an interval of 1 cm. As a result, a test piece including a test film and two polyimide tapes arranged on the test film at an interval of 1 cm was obtained. The test film for the test piece was stretched until the distance between the polyimide tapes was 2 cm. The test piece in the stretched state was fixed with a tape to a measurement mask having a diameter of 2 mm. Next, the test piece was set in a film holder (FLH-741, manufactured by Shimadzu Corporation), and using a UV-visible near infrared spectrophotometer (manufactured by JASCO Corporation, V-670DS), a measurement speed of 2000 nm / min. The parallel transmittance of the stretched portion of the test film was measured at a spot diameter of 2 mm (diameter) and a measurement range of 350 to 800 nm.

(Light transmittance of dicing tape)
The die bonding film was removed from the dicing die bonding film to obtain a dicing tape.
A dicing tape is fixed to a film holder (FLH-741, manufactured by Shimadzu Corporation), and an ultraviolet-visible-near infrared spectrophotometer (manufactured by JASCO Corporation, V-670DS) is used to measure 2000 nm / min, spot The parallel transmittance was measured with a diameter of 2 mm (diameter) and a measurement range of 350 to 800 nm. In addition, light was irradiated toward the 2nd main surface of the base material of a dicing tape.

(Surface roughness Ra)
About the 2nd main surface of the base material of a dicing tape, surface roughness Ra was measured.
The surface roughness was measured based on JIS B 0601 using a non-contact three-dimensional roughness measuring device (NT3300) manufactured by Veeco. The measurement conditions were 50 times, and the measurement values were obtained by applying a median filter to the measurement data. The measurement was performed 5 times while changing the measurement location, and the average value was defined as the surface roughness.

(Processability)
A silicon wafer adjusted to a thickness of 50 μm by polishing was bonded to a dicing die bonding film at 60 ° C. and a pressure of 0.1 MPa. A silicon wafer and a die bond film were cut into a size of 5 mm × 5 mm using a dicing apparatus (DFD6361, manufactured by DISCO Corporation) to obtain a die bond chip. The chip for die bonding includes a chip and a die bonding agent disposed on the chip. Using a die-bonding device (SPA-300, manufactured by Shinkawa Co., Ltd.), using a rubber collet having a bottom surface of 5 mm × 5 mm and a suction hole with a diameter of 1 mm in the center of the bottom surface, 120 ° C., 0.1 second The die bonding chip was bonded on a flat copper lead frame under the conditions of 0.1 kg. As a result, a lead frame with a chip was obtained. Using an ultrasonic imaging device (Hybrid SAT manufactured by Hitachi Power Solutions Co., Ltd.), the presence or absence of voids in the lead frame with chips was confirmed. A lead frame with a chip in which a void of 1 mm or more was observed was selected, and it was confirmed whether a void could be observed with an optical microscope (VHX-2000 manufactured by Keyence Corporation) from the side of the chip. When the void was confirmed, it was determined as “good”, and when it was not confirmed, it was determined as “poor”.

DESCRIPTION OF SYMBOLS 1 Dicing tape 2 Laminated | multilayer film 3 Die bond film 4 Semiconductor wafer 5 Semiconductor chip 6 Adhering body 61 Adhering body 7 with a semiconductor chip Bonding wire 8 Sealing resin 9 Separator 10 Dicing die-bonding film 11 Base material 11a 1st main surface 11b 1st 2 Main surface 12 Adhesive layer 31 Affixed part 32 Non-adhered part 91 Laminated part 92 Peripheral part 93 Peripheral part 301 Mark 901 Cut

Claims (14)

Haze is 0% or more and 25% or less,
Parallel light transmittance at a wavelength of 600 nm is 85% or more,
The parallel light transmittance at a wavelength of 600 nm when stretched to 200% is 5% or more lower than the parallel light transmittance at a wavelength of 600 nm when not stretched.
Die bond film. The die-bonding film according to claim 1, wherein parallel light transmittance at a wavelength of 600 nm exceeds 85%. The die-bonding film according to claim 1 or 2, wherein the parallel light transmittance at a wavelength of 400 nm exceeds 85%. The die-bonding film according to any one of claims 1 to 3, wherein the parallel light transmittance in all regions having a wavelength of 400 nm or more and 600 nm or less exceeds 85%. A dicing tape comprising a substrate and an adhesive layer disposed on the substrate;
A die bond film having a haze of 0% or more and 25% or less disposed on the pressure-sensitive adhesive layer;
The die bond film has a parallel light transmittance at a wavelength of 600 nm when stretched to 200%, which is 5% or more lower than a parallel light transmittance at a wavelength of 600 nm when not stretched.
Dicing die bond film. The dicing die-bonding film according to claim 5, wherein the base material has a parallel light transmittance of 0% or more and 20% or less in a whole region having a wavelength of 400 nm or more and 600 nm or less . The die bond film includes a pasting part for pasting a semiconductor wafer and a non-pasting part arranged around the pasting part,
The dicing die-bonding film according to claim 5 or 6, wherein a mark is provided on the non-sticking portion. The base material is defined on both sides with a first main surface in contact with the pressure-sensitive adhesive layer and a second main surface opposite to the first main surface,
The dicing die-bonding film according to claim 5, wherein the second main surface has a surface roughness Ra of 0.5 μm or more and 5 μm or less. A separator,
A die bond film having a haze of 0% to 25% disposed on the separator, a pressure-sensitive adhesive layer disposed on the die bond film, and a substrate disposed on the pressure-sensitive adhesive layer are provided. A laminated film comprising a dicing die bond film ,
The die bond film has a parallel light transmittance at a wavelength of 600 nm when stretched to 200%, which is 5% or more lower than a parallel light transmittance at a wavelength of 600 nm when not stretched.
Laminated film . The laminated film according to claim 9, wherein the base material has a parallel light transmittance of 0% or more and 20% or less in a whole region having a wavelength of 400 nm or more and 600 nm or less . The separator includes a laminated portion in contact with the die bond film and an outer peripheral portion disposed on an outer periphery of the laminated portion,
The laminated film according to claim 9 or 10 , wherein a mark is provided on the outer peripheral portion. The separator includes a laminated portion in contact with the die bond film,
The laminated film according to claim 9 or 10 , wherein a mark is provided on an edge of the laminated portion. The laminated film according to claim 11 or 12, wherein the mark is a cut. The laminated film according to claim 13, wherein the depth of the cut is 5 μm or more and 45 μm or less.