CN104946147B - Die bonding film, dicing die bonding film, and laminated film - Google Patents
Die bonding film, dicing die bonding film, and laminated film Download PDFInfo
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- CN104946147B CN104946147B CN201510142546.5A CN201510142546A CN104946147B CN 104946147 B CN104946147 B CN 104946147B CN 201510142546 A CN201510142546 A CN 201510142546A CN 104946147 B CN104946147 B CN 104946147B
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- die
- bonding film
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
Abstract
A die-bonding film, a dicing-die-bonding film, and a laminated film. The invention provides a die bonding film and the like capable of nondestructively observing a void without sacrificing a semiconductor device. A chip bonding film has a haze of 0% to 25%.
Description
Technical Field
The invention relates to a die bonding film, a dicing die bonding film and a laminated film.
Background
A method of using a die bonding film when bonding a semiconductor chip to an adherend such as a metal lead frame is known (for example, see patent document 1).
In such a method, voids may be generated in the die-bonding film after the die bonding. The voids reduce the reliability of the semiconductor device evaluated by resistance to moisture absorption reflow soldering, resistance to HAST (High Accelerated Stress Test), and the like, resulting in a failure of the semiconductor device.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 6-145639
Disclosure of Invention
Problems to be solved by the invention
Conventional die-bonding films contain fillers of about 500nm and are therefore opaque. Therefore, in order to observe the void in the die bonding film, an ultrasonic imaging device (SAT) is generally used. However, in the case of observation using an ultrasonic imaging apparatus, the semiconductor device needs to be immersed in water, and therefore, the semiconductor device needs to be sacrificed for testing.
The present invention has been made to solve the above problems, and an object of the present invention is to provide a die bond film, a dicing die bond film, and a laminate film, which can observe a void without sacrificing a semiconductor device.
Means for solving the problems
The invention relates to a chip bonding film with haze of 0-25%. The die-bonding film of the present invention has high transparency, and therefore, the gap can be observed without using an ultrasonic imaging device. Therefore, observation can be performed without sacrificing the semiconductor device, and the yield of the semiconductor device can be improved. In addition, defects of the semiconductor device can be reduced.
The die-bonding film of the present invention preferably has a transmittance of light having a wavelength of 600nm of more than 85%. If the content exceeds 85%, the voids can be visually observed.
The die-bonding film of the present invention preferably has a transmittance of light having a wavelength of 400nm of more than 85%. If the amount exceeds 85%, the gap can be observed by a gap detection device, specifically, an optical microscope device or the like in conjunction with an image recognition program.
The die-bonding film of the present invention preferably has a transmittance of light exceeding 85% in all regions having a wavelength of 400nm to 600 nm. If the content exceeds 85%, the gap can be observed visually with a gap detector.
The present invention also relates to a dicing die-bonding film including: the dicing tape includes a base material, an adhesive layer disposed on the base material, and a die-bonding film disposed on the adhesive layer and having a haze of 0% to 25%.
The die-bonding film preferably has a transmittance of light having a wavelength of 600nm in a state of being elongated to 200% lower by 5% or more than a transmittance of light having a wavelength of 600nm in a state of being not elongated. By elongating the die bond film, the die bond film can be easily observed, and thus the presence or absence of the die bond film can be easily confirmed.
However, when the die bond film has high transparency, it is difficult to know the position of the die bond film, and therefore, it is difficult to perform alignment when the die bond film is bonded to a dicing tape. In addition, in the quality inspection, abnormality in the shape of the die bonding film may not be detected.
Therefore, the die bond film preferably includes a bonding portion for bonding the semiconductor wafer and a non-bonding portion arranged around the bonding portion, and the non-bonding portion is provided with a mark. The marking is preferably optically identifiable. When the mark is provided in the non-adhesive portion, alignment can be easily performed when the die bonding film is bonded to the dicing tape. In addition, the presence or absence of the die bonding film can be easily determined. In addition, in the quality inspection, abnormality in the shape of the die bonding film may be detected.
The substrate preferably has a transmittance of 0 to 20% for light in the entire region having a wavelength of 400 to 600 nm. Thus, when the dicing die-bonding film is bonded to the semiconductor wafer, alignment can be performed with reference to the edge of the base material or the like.
The substrate has a 1 st main surface in contact with the adhesive layer and a 2 nd main surface opposite to the 1 st main surface. The surface roughness Ra of the 2 nd main surface is preferably 0.5 to 5 μm. This can reduce the light transmittance of the substrate.
The present invention also relates to a laminated film including a separator and a dicing die-bonding film disposed on the separator.
The spacer preferably includes a laminated portion in contact with the die bond film, and an outer peripheral portion arranged on an outer periphery of the laminated portion. Preferably, the outer periphery is provided with a mark. Preferably, the mark is provided at an edge of the laminated portion. If the notch is provided on the outer peripheral portion and/or the edge of the laminated portion, alignment can be easily performed when the die bond film is bonded to the dicing tape.
Preferably marked as a score. The depth of the notch is preferably 5 μm to 45 μm for the reason that the position can be easily recognized.
Effects of the invention
According to the present invention, a die-bonding film, a dicing die-bonding film, and a laminated film capable of nondestructively observing a void without sacrificing a semiconductor device are provided.
Drawings
Fig. 1 is a schematic cross-sectional view of a die-bonding film.
Fig. 2 is a schematic cross-sectional view of a dicing die-bonding film.
Fig. 3 is a schematic plan view of the laminated film.
Fig. 4 is a schematic cross-sectional view showing a laminated film partially enlarged.
Fig. 5 is a schematic cross-sectional view showing a semiconductor wafer arranged on a dicing die-bonding film.
Fig. 6 is a schematic cross-sectional view showing a state after the semiconductor wafer is singulated.
Fig. 7 is a schematic cross-sectional view of an adherend with a semiconductor chip.
Fig. 8 is a schematic cross-sectional view of the semiconductor device.
Fig. 9 is a schematic cross-sectional view of a die-bonding film according to modification 1.
Fig. 10 is a schematic cross-sectional view of a laminated film according to modification 2.
Fig. 11 is a schematic cross-sectional view of a laminated film according to modification 3.
Fig. 12 is a schematic cross-sectional view of a laminated film according to modification 4.
Description of the symbols
1 dicing tape
2 laminated film
3 die bonding film
4 semiconductor wafer
5 semiconductor chip
6 adherend
61 adherend with semiconductor chip
7 bonding wire
8 sealing resin
9 spacer
10 dicing die-bonding film
11 base material
11b the 2 nd main surface
12 adhesive layer
31 sticking part
32 non-adhesive part
91 laminated part
92 outer peripheral portion
93 peripheral edge part
301 mark
901 scoring
Detailed Description
The present invention will be described in detail below with reference to embodiments, but the present invention is not limited to these embodiments.
[ embodiment 1]
(die bonding film 3)
As shown in fig. 1, the die bonding film 3 is in the form of a film. The chip bonding film 3 has high transparency, and therefore the gap can be observed without using an ultrasonic imaging device. Therefore, observation can be performed without sacrificing the semiconductor device, and the yield of the semiconductor device can be improved. In addition, defects of the semiconductor device can be reduced.
The haze of the die-bonding film 3 is 25% or less, preferably 20% or less, more preferably 15% or less, and particularly preferably 10% or less. Since the content is 25% or less, the transparency is high, and the gap can be observed without using an ultrasonic imaging apparatus. The lower limit of the haze of the die-bonding film 3 is not particularly limited, and is, for example, 0% or more. The lower limit of the haze of the die-bonding film 3 may be, for example, 0.5% or more.
The haze can be measured by the method described in examples.
The haze can be controlled by the inorganic filler material. For example, the haze can be reduced by using an inorganic filler having a small average particle size without blending the inorganic filler.
In the die-bonding film 3, the transmittance of light having a wavelength of 600nm is preferably over 85%, more preferably 90% or more. If the content exceeds 85%, the voids can be visually observed. For observation, an optical microscope or the like may be used.
The transmittance of light having a wavelength of 600nm can be controlled by the particle size of the filler. For example, by reducing the particle size of the filler, a transmittance of more than 85% can be obtained.
In the die-bonding film 3, the transmittance of light having a wavelength of 400nm is preferably over 85%. If the amount exceeds 85%, the voids can be observed by a void detection device, specifically, an optical microscope or the like.
The transmittance of light having a wavelength of 400nm can be controlled by the particle size of the filler. For example, by reducing the particle size of the filler, a transmittance of more than 85% can be obtained.
In the die-bonding film 3, the transmittance of light in the entire region having a wavelength of 400nm to 600nm is preferably over 85%. If the content exceeds 85%, the gap can be observed visually with a gap detector.
The transmittance of light can be measured by the method described in examples.
In the die-bonding film 3, the transmittance of light having a wavelength of 600nm in a state of being elongated to 200% is preferably lower by 5% or more than the transmittance of light having a wavelength of 600nm in a state of being not elongated. By elongating the die bond film 3, the die bond film 3 can be easily observed, and thus the presence or absence of the die bond film 3 can be easily confirmed. In the dicing die-bonding film, the presence or absence of the die-bonding film 3 can be easily confirmed by stretching the dicing die-bonding film. The decrease in transmittance is presumably due to the orientation of the polymer contained in the die bond film 3 caused by elongation.
The transmittance of light having a wavelength of 600nm in a state of being elongated to 200% in the die-bonding film 3 is preferably 70% or less, and more preferably 60% or less. If the content is 70% or less, the presence or absence of the die bonding film 3 can be easily confirmed. The lower limit of the transmittance of light having a wavelength of 600nm in a state of being elongated to 200% is not particularly limited, and is, for example, 5%.
In the die-bonding film 3, the transmittance of light having a wavelength of 600nm in a state of being elongated to 5% is preferably 75% or more, and more preferably 80% or more. When the content is 80% or more, the transparency can be maintained even after the expansion.
The die-bonding film 3 preferably has thermosetting properties.
The die-bonding film 3 preferably contains a thermoplastic resin. Examples of the thermoplastic resin include: natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, an ethylene-vinyl acetate copolymer, an ethylene-acrylic acid ester copolymer, a polybutadiene resin, a polycarbonate resin, a thermoplastic polyimide resin, a polyamide resin such as 6-nylon or 6, 6-nylon, a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET or PBT, a polyamideimide resin, a fluororesin, or the like. Among these thermoplastic resins, acrylic resins having few ionic impurities, high heat resistance, and capable of securing reliability of semiconductor devices are particularly preferable.
The acrylic resin is not particularly limited, and examples thereof include a polymer (acrylic copolymer) containing 1 or 2 or more kinds of acrylic acid or methacrylic acid ester having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples of the alkyl group include: methyl, ethyl, propyl, isopropyl, n-butyl, t-butyl, isobutyl, pentyl, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, octadecyl, or dodecyl, and the like.
Further, other monomers forming the polymer (acrylic copolymer) are not particularly limited, and examples thereof include: carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; anhydride monomers such as maleic anhydride and itaconic anhydride; hydroxyl group-containing monomers such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl acrylate; sulfonic acid group-containing monomers such as styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acryloyloxynaphthalenesulfonic acid; or a monomer having a phosphoric acid group such as 2-hydroxyethyl acryloylphosphate.
Among the acrylic resins, acrylic resins having a weight average molecular weight of 10 ten thousand or more are preferable, acrylic resins having a weight average molecular weight of 30 to 300 ten thousand are more preferable, and acrylic resins having a weight average molecular weight of 50 to 200 ten thousand are even more preferable. This is because, when the amount is within the above numerical range, the adhesiveness and heat resistance are excellent. The weight average molecular weight is a value calculated by measuring by GPC (permeation gel chromatography) and converting to polystyrene.
The content of the thermoplastic resin in the die-bonding film 3 is preferably 5% by weight or more, more preferably 10% by weight or more, and further preferably 30% by weight or more. The content of the thermoplastic resin is preferably 90% by weight or less, more preferably 80% by weight or less, and further preferably 70% by weight or less.
The die-bonding film 3 preferably contains a thermosetting resin. This can improve thermal stability.
Examples of the thermosetting resin include: a phenol resin, an amino resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a silicone resin, a thermosetting polyimide resin, or the like. Particularly, an epoxy resin having a low content of ionic impurities and the like which corrode a semiconductor element is preferable. As the curing agent for the epoxy resin, a phenol resin is preferable.
As the epoxy resin, there is no particular limitation, and for example: a bifunctional epoxy resin or a polyfunctional epoxy resin such as a bisphenol a type, a bisphenol F type, a bisphenol S type, a brominated bisphenol a type, a hydrogenated bisphenol a type, a bisphenol AF type, a biphenyl type, a naphthalene type, a fluorene type, a phenol novolac type, an o-cresol novolac type, a trishydroxyphenylmethane type, a tetrakis (hydroxyphenyl) ethane type, or an epoxy resin such as a hydantoin type, a triglycidyl isocyanurate type, or a glycidylamine type. Among these epoxy resins, particularly preferred is a phenol novolac type epoxy resin, a biphenyl type epoxy resin, a trishydroxyphenylmethane type epoxy resin or a tetrakis (hydroxyphenyl) ethane type epoxy resin. This is because: these epoxy resins are highly reactive with phenolic resins as curing agents and are excellent in heat resistance and the like.
The phenol resin functions as a curing agent for the epoxy resin, and examples thereof include: phenol novolac resins such as phenol novolac resin, phenol aralkyl resin, cresol novolac resin, tert-butylphenol novolac resin, and nonylphenol novolac resin, resol novolac resins, and polyhydroxystyrenes such as polyparahydroxystyrene. Among these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferable. This is because the connection reliability of the semiconductor device can be improved.
The mixing ratio of the epoxy resin and the phenol resin is preferably such that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents to 1 equivalent of the epoxy group in the epoxy resin component, for example. More preferably 0.8 to 1.2 equivalents. Namely, this is because: if the mixing ratio of the two components is outside the above range, the curing reaction does not proceed sufficiently, and the properties of the cured product tend to deteriorate.
The content of the thermosetting resin in the die-bonding film 3 is preferably 5% by weight or more, more preferably 10% by weight or more, and further preferably 30% by weight or more. The content of the thermosetting resin is preferably 90% by weight or less, more preferably 80% by weight or less, and further preferably 70% by weight or less.
The die-bonding film 3 may contain an inorganic filler material. In order to improve transparency, an inorganic filler having a small average particle diameter is preferably used.
The average particle diameter of the inorganic filler is preferably 150nm or less, more preferably 100nm or less, further preferably 80nm or less, and particularly preferably 50nm or less. When the thickness is 150nm or less, the transparency of the die-bonding film 3 can be improved. On the other hand, the average particle diameter of the inorganic filler is preferably 10nm or more, and more preferably 25nm or more. When the thickness is 10nm or more, the decrease in transmittance due to the aggregation of the filler can be prevented.
The average particle size can be derived by using a sample arbitrarily extracted from the mother aggregate and measuring the sample with a laser diffraction scattering particle size distribution measuring apparatus.
Examples of the inorganic filler include quartz glass, talc, silica (fused silica, crystalline silica, or the like), alumina, aluminum nitride, silicon nitride, and boron nitride. As the inorganic filler, a material having conductivity can be preferably used. Examples of the conductive inorganic filler include solder, nickel, copper, silver, and gold. Among these, silica and alumina are preferable, and silica is more preferable because the linear expansion coefficient can be reduced favorably.
The silica is preferably a silica powder, and more preferably a fused silica powder. Examples of the fused silica powder include: spherical fused silica powder and crushed fused silica powder, but spherical fused silica powder is preferable from the viewpoint of fluidity.
The content of the inorganic filler in the die-bonding film 3 is preferably 10 wt% or more, and more preferably 30 wt% or more. On the other hand, the content of the inorganic filler is preferably 90% by weight or less, more preferably 80% by weight or less, and further preferably 70% by weight or less.
The die-bonding film 3 may contain, in addition to the above components, a compounding agent generally used in film production, for example, a crosslinking agent.
The die-bonding film 3 can be manufactured by a usual method. For example, the die-bonding film 3 can be produced by preparing an adhesive composition solution containing the above-mentioned components, applying the adhesive composition solution to the base separator so as to have a predetermined thickness, forming a coating film, and then drying the coating film.
The solvent used in the adhesive composition solution is not particularly limited, and is preferably an organic solvent capable of uniformly dissolving, kneading or dispersing the above components. Examples thereof include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone, and toluene and xylene. The coating method is not particularly limited. Examples of the solvent coating method include a slit coater, a gravure coater, a roll coater, a reverse coater, a comma coater, a tube knife coater (パイプドクターコーター), and screen printing. Among them, a slit coater is preferable from the viewpoint of high uniformity of coating thickness.
As the substrate separator, a plastic film or paper coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent, or polyethylene terephthalate (PET), polyethylene, polypropylene, or the like can be used. Examples of the method for applying the adhesive composition solution include: roll coating, screen coating, gravure coating, and the like. The drying conditions of the coating film are not particularly limited, and may be, for example, 70 to 160 ℃ at a drying temperature for 1 to 5 minutes. .
As a method for manufacturing the die-bonding film 3, for example, the following method is also suitably employed: the above components are mixed by a mixer, and the resulting mixture is press-molded to produce a die-bonding film 3. Examples of the mixer include a planetary mixer and the like.
The thickness of the die-bonding film 3 is not particularly limited, but is preferably 5 μm or more, and more preferably 15 μm or more. If the thickness is less than 5 μm, a portion which is not bonded to the warped semiconductor wafer or semiconductor chip may be generated, and the bonding area may become unstable. The thickness of the die-bonding film 3 is preferably 100 μm or less, and more preferably 50 μm or less. If it exceeds 100 μm, the die bond film 3 may be pushed out excessively by the load of die attachment, and the pad may be contaminated.
The die-bonding film 3 can be used for the manufacture of semiconductor devices. In particular, it can be used for bonding an adherend to a semiconductor chip. Examples of the adherend include: lead frames, interposers (インターポーザ), semiconductor chips, and the like.
The die-bonding film 3 is preferably used in the form of a dicing die-bonding film. When used in this form, the semiconductor wafer in a state of being stuck to the dicing die bonding film can be handled, and therefore, the chance of handling the semiconductor wafer alone can be reduced.
(dicing-die bonding film 10)
As shown in fig. 2, the dicing die bonding film 10 includes: a dicing tape 1, and a die bonding film 3 disposed on the dicing tape 1.
The dicing tape 1 includes: a substrate 11 and an adhesive layer 12 disposed on the substrate 11. The die-bonding film 3 is disposed on the adhesive layer 12.
The transmittance of light in the entire region of the substrate 11 having a wavelength of 400nm to 600nm is preferably low. This is to enable alignment with respect to the edge of the base material 11 or the like when the dicing die-bonding film 10 is bonded to the semiconductor wafer 4. The transmittance of light in the entire region having a wavelength of 400nm to 600nm is preferably 0% to 20%, more preferably 0% to 10%. If the amount is 20% or less, the alignment can be performed with reference to the edge of the substrate 11 or the like.
The substrate 11 has both surfaces defined by a 1 st main surface 11a in contact with the adhesive layer 12 and a 2 nd main surface 11b opposed to the 1 st main surface 11 a. The surface roughness Ra of the 2 nd main surface 11b is preferably 0.5 μm or more, and more preferably 1 μm or more. When the particle size is 0.5 μm or more, the light is scattered to make the particle opaque, so that the position can be recognized by the sensor. On the other hand, the upper limit of the surface roughness Ra of the 2 nd main surface 11b is not particularly limited. The upper limit of the surface roughness Ra of the 2 nd main surface 11b is, for example, 5 μm.
Examples of the substrate 11 include: polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra-low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homo-polypropylene, polybutene, and polymethylpentene; examples of the thermoplastic resin include, but are not limited to, polyethylene-vinyl acetate copolymers, ionomer resins, ethylene- (meth) acrylic acid copolymers, ethylene- (meth) acrylate (random, alternating) copolymers, ethylene-butene copolymers, ethylene-hexene copolymers, polyesters such as polyurethane, polyethylene terephthalate and polyethylene naphthalate, polycarbonates, polyimides, polyether ether ketones, polyimides, polyetherimides, polyamides, wholly aromatic polyamides, polyphenylene sulfides, aromatic polyamides (paper), glass cloth, fluorine resins, polyvinyl chloride, polyvinylidene chloride, cellulose resins, silicone resins, metals (foils), and paper.
The substrate 11 may contain a dye or a pigment to facilitate position recognition.
The substrate 11 also preferably has ultraviolet transparency.
The surface of the substrate 11 may be subjected to a conventional surface treatment, for example, a chemical or physical treatment such as chromic acid treatment, ozone exposure, flame exposure, high-voltage shock exposure, or ionizing radiation treatment, or a coating treatment with an undercoating agent (for example, a binder described later) in order to improve adhesion to an adjacent layer, holding properties, or the like.
The thickness of the substrate 11 may be appropriately determined without any particular limitation, but is generally about 5 μm to 200 μm.
The adhesive used for forming the pressure-sensitive adhesive layer 12 is not particularly limited, and for example, a general pressure-sensitive adhesive such as an acrylic adhesive or a rubber adhesive can be used. As the pressure-sensitive adhesive, an acrylic adhesive containing an acrylic polymer as a base polymer is preferable from the viewpoint of cleaning ability of electronic parts such as semiconductor wafers and glass which are protected from contamination, and cleaning ability with an organic solvent such as ultrapure water or alcohol.
Examples of the acrylic polymer include acrylic polymers using, as a monomer component, one or more of alkyl (meth) acrylates (e.g., linear or branched alkyl esters having 1 to 30 carbon atoms, particularly 4 to 18 carbon atoms, such as alkyl esters of methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl, tridecyl, tetradecyl, hexadecyl, octadecyl, and eicosyl esters) and cycloalkyl (meth) acrylates (e.g., cyclopentyl, cyclohexyl, and the like). The term "(meth)" used herein means an acrylate and/or a methacrylate, and all of the terms "(meth)" in the present invention have the same meaning.
The acrylic polymer may contain units corresponding to other monomer components copolymerizable with the above-mentioned alkyl (meth) acrylate or cycloalkyl ester, as necessary, in order to improve cohesive force, heat resistance, and the like. Examples of such monomer components include: carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; anhydride monomers such as maleic anhydride and itaconic anhydride; hydroxyl group-containing monomers such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and methyl (meth) acrylate- (4-hydroxymethylcyclohexyl) methyl ester; sulfonic acid group-containing monomers such as styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, (meth) sulfopropyl acrylate, and (meth) acryloyloxynaphthalenesulfonic acid; phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; (ii) acrylamide; acrylonitrile, and the like. These copolymerizable monomer components may be used singly or in combination. The amount of the copolymerizable monomer is preferably 40% by weight or less based on the total monomer components.
In addition, the acrylic polymer may contain a polyfunctional monomer or the like as a comonomer component as necessary for crosslinking. Examples of such polyfunctional monomers include: hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) acrylate, and the like. One or two or more of these polyfunctional monomers may be used. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.
The acrylic polymer can be obtained by polymerizing a single monomer or a mixture of two or more monomers. The polymerization may be carried out by any means such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, etc. The content of the low molecular weight substance is preferably small in view of preventing contamination of a clean adherend and the like. From this viewpoint, the number average molecular weight of the acrylic polymer is preferably 30 ten thousand or more, and more preferably about 40 to 300 ten thousand.
In addition, an external crosslinking agent may be suitably used in the binder in order to increase the number average molecular weight of an acrylic polymer or the like as a base polymer. Specific examples of the external crosslinking method include: a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine crosslinking agent to the reaction mixture. In the case of using an external crosslinking agent, the amount thereof to be used may be appropriately determined depending on the balance with the base polymer to be crosslinked and the use as an adhesive. In general, about 5 parts by weight or less, and more preferably 0.1 to 5 parts by weight, is blended with 100 parts by weight of the base polymer. In addition to the above components, various additives such as a tackifier and an antioxidant which are conventionally known may be used in the adhesive as needed.
The pressure-sensitive adhesive layer 12 may be formed using a radiation-curable pressure-sensitive adhesive. The radiation-curable pressure-sensitive adhesive can be easily reduced in adhesive force by increasing the degree of crosslinking by irradiation with radiation such as ultraviolet rays.
The radiation-curable pressure-sensitive adhesive may be one having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness, without any particular limitation. Examples of the radiation-curable pressure-sensitive adhesive include: an addition type radiation curable pressure-sensitive adhesive containing a radiation curable monomer component and an oligomer component is blended with the above-mentioned general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive and a rubber pressure-sensitive adhesive.
Examples of the radiation-curable monomer component to be blended include: urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1, 4-butanediol di (meth) acrylate, and the like. The radiation-curable oligomer component includes various oligomers such as urethane type, polyether type, polyester type, polycarbonate type, polybutadiene type, etc., and the molecular weight thereof is preferably in the range of about 100 to 30000. The amount of the radiation-curable monomer component or oligomer component to be blended may be determined as appropriate depending on the type of the pressure-sensitive adhesive layer, and the amount of the radiation-curable monomer component or oligomer component to be blended may be determined as appropriate depending on the type of the pressure-sensitive adhesive layer. Generally, the amount of the acrylic polymer is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight, based on 100 parts by weight of a base polymer such as an acrylic polymer constituting the adhesive.
In addition to the above-described additive-type radiation-curable pressure-sensitive adhesive, examples of the radiation-curable pressure-sensitive adhesive include: an internal radiation-curable adhesive using a polymer having a carbon-carbon double bond in a side chain or a main chain of the polymer or at a terminal of the main chain as a base polymer. The internal radiation-curable pressure-sensitive adhesive does not need to contain or contain a large amount of oligomer components or the like as low-molecular components, and therefore, the oligomer components or the like do not migrate in the pressure-sensitive adhesive over time, and a pressure-sensitive adhesive layer having a stable layer structure can be formed, which is preferable.
The base polymer having a carbon-carbon double bond may be a base polymer having a carbon-carbon double bond and having an adhesive property, without particular limitation. As such a base polymer, a polymer having an acrylic polymer as a basic skeleton is preferable. The basic skeleton of the acrylic polymer is exemplified by the above-mentioned exemplary acrylic polymers.
The method for introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be employed, but introduction of a carbon-carbon double bond into a polymer side chain is relatively easy in terms of molecular design. For example, the following methods can be mentioned: after a monomer having a functional group is copolymerized with an acrylic polymer in advance, a compound having a functional group reactive with the functional group and a carbon-carbon double bond is subjected to condensation or addition reaction while maintaining the radiation curability of the carbon-carbon double bond.
Examples of combinations of these functional groups include: carboxyl and epoxy groups, carboxyl and aziridinyl groups, hydroxyl and isocyanate groups, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable from the viewpoint of easiness of tracing the reaction. In addition, as long as the combination of these functional groups generates the acrylic polymer having a carbon-carbon double bond, the functional group may be on either side of the acrylic polymer and the compound, and in the preferred combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- α, α -dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, an acrylic polymer obtained by copolymerizing the above exemplified hydroxyl group-containing monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, an ether compound of diethylene glycol monovinyl ether, or the like can be used.
The internal radiation-curable pressure-sensitive adhesive may be used alone as the base polymer having a carbon-carbon double bond (particularly, an acrylic polymer), or may be blended with the radiation-curable monomer component or oligomer component to such an extent that the properties are not impaired. The radiation-curable oligomer component and the like are usually in the range of 30 parts by weight, preferably 0 to 10 parts by weight, based on 100 parts by weight of the base polymer.
The radiation-curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include: α -ketol compounds such as 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α -hydroxy- α, α' -dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, and 1-hydroxycyclohexyl phenyl ketone; acetophenone compounds such as methoxyacetophenone, 2 '-dimethoxy-2-phenylacetophenone, 2' -diethoxyacetophenone and 2-methyl-1- [4- (methylthio) phenyl ] -2-morpholinopropan-1-one; benzoin ether-based compounds such as benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether; ketal compounds such as benzil dimethyl ketal; aromatic sulfonyl chloride compounds such as 2-naphthalenesulfonyl chloride; optically active oxime compounds such as 1-phenone-1, 1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone-based compounds such as benzophenone, benzoylbenzoic acid, and 3, 3' -dimethyl-4-methoxybenzophenone; thioxanthone compounds such as thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2, 4-dimethylthioxanthone, isopropylthioxanthone, 2, 4-dichlorothioxanthone, 2, 4-diethylthioxanthone and 2, 4-diisopropylthioxanthone; camphorquinone; a halogenated ketone; acyl phosphine oxides; acyl phosphonates and the like. The amount of the photopolymerization initiator is, for example, about 0.05 to 20 parts by weight per 100 parts by weight of a base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.
Examples of the radiation-curable pressure-sensitive adhesive include a rubber-based pressure-sensitive adhesive and an acrylic pressure-sensitive adhesive disclosed in jp-a 60-196956, and the rubber-based pressure-sensitive adhesive and the acrylic pressure-sensitive adhesive include: photopolymerizable compounds such as addition polymerizable compounds having two or more unsaturated bonds and alkoxysilanes having epoxy groups; and photopolymerization initiators such as carbonyl compounds, organic sulfur compounds, peroxides, amines, and onium salt compounds.
The radiation-curable pressure-sensitive adhesive layer 12 may contain a compound that is colored by irradiation with radiation, if necessary. By containing a compound that is colored by irradiation with radiation in the pressure-sensitive adhesive layer 12, only the portion irradiated with radiation can be colored. The compound colored by irradiation with radiation is a compound which is colorless or pale before irradiation with radiation but becomes colored by irradiation with ultraviolet light, and examples thereof include leuco dyes (ロイコ dyes). The ratio of the compound to be colored by irradiation with radiation may be appropriately set.
The thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, but is preferably about 1 μm to 50 μm from the viewpoint of preventing chipping of the die cut surface, fixing and holding of the die-bonding film 3, and the like. More preferably 2 to 30 μm, and still more preferably 5 to 25 μm.
The die-bonding film 3 of the dicing die-bonding film 10 is generally protected by a spacer.
The dicing die-bonding film 10 can be manufactured by a usual method. For example, the dicing die-bonding film 10 can be manufactured by attaching the adhesive layer 12 of the dicing tape 1 to the die-bonding film 3.
(laminated film 2)
As shown in fig. 3 to 4, the laminated film 2 includes: a spacer 9, and a plurality of dicing die-bonding films 10 disposed on the spacer 9. The dicing die-bonding film 10 is disposed in plurality on the spacer 9 at a predetermined interval.
The separator 9 functions as a protective material for protecting the die-bonding film 3 before being supplied to practical use. The separator 9 is peeled off when the semiconductor wafer is bonded to the die bonding film 3. As the separator 9, a plastic film or paper coated with a release agent such as a fluorine-containing release agent or a long-chain alkyl acrylate release agent, or polyethylene terephthalate (PET), polyethylene, polypropylene, or the like can be used.
[ method for manufacturing semiconductor device ]
A method for manufacturing a semiconductor device will be described.
As shown in fig. 5, the dicing die bonding film 10 is pressure-bonded to the semiconductor wafer 4. Examples of the semiconductor wafer 4 include: silicon wafers, silicon carbide wafers, compound semiconductor wafers, and the like. Examples of the compound semiconductor wafer include a gallium nitride wafer and the like.
Examples of the pressure bonding method include a method of pressing with a pressing means such as a pressure bonding roller.
The pressure bonding temperature (sticking temperature) is preferably 35 ℃ or higher, more preferably 37 ℃ or higher. The upper limit of the crimping temperature is preferably low, preferably 50 ℃ or lower, more preferably 45 ℃ or lower. By performing the pressure bonding at a low temperature, thermal influence on the semiconductor wafer 4 can be prevented, and warping of the semiconductor wafer 4 can be suppressed.
Further, the pressure is preferably 1 × 105Pa～1×107Pa, more preferably 2 × 105Pa～8×106Pa。
Then, as shown in fig. 6, dicing of the semiconductor wafer 4 is performed. That is, the semiconductor wafer 4 is cut into individual pieces having a predetermined size, and the semiconductor chips 5 are cut out. The cleavage was carried out by a conventional method. In this step, for example, a dicing method called full dicing may be used to cut into the dicing die-bonding film 10. The cutting device used in this step is not particularly limited, and a conventionally known device can be used. Further, since the semiconductor wafer 4 is bonded and fixed by the dicing die-bonding film 10, chipping and chip scattering can be suppressed, and breakage of the semiconductor wafer 4 can also be suppressed.
In order to peel off the semiconductor chip 5 adhesively fixed to the dicing die-bonding film 10, pickup of the semiconductor chip 5 is performed. The method of picking up is not particularly limited, and various conventionally known methods can be used. Examples thereof include: a method of pushing up each semiconductor chip 5 from the dicing die bonding film 10 side with a needle, picking up the pushed-up semiconductor chip 5 by a pickup device, and the like.
Here, when the pressure-sensitive adhesive layer 12 is of an ultraviolet-curable type, the pressure-sensitive adhesive layer 12 is irradiated with ultraviolet rays and then picked up. This reduces the adhesive strength of the adhesive layer 12 to the die-bonding film 3, and facilitates the peeling of the semiconductor chip 5. As a result, the pickup can be performed without damaging the semiconductor chip 5. Conditions such as irradiation intensity and irradiation time when ultraviolet rays are irradiated are not particularly limited, and can be appropriately set as necessary.
As shown in fig. 7, the picked-up semiconductor chip 5 is adhesively fixed to the adherend 6 by the die bonding film 3, to obtain an adherend 61 with a semiconductor chip. The adherend with semiconductor chip 61 includes: an adherend 6, a die bonding film 3 disposed on the adherend 6, and a semiconductor chip 5 disposed on the die bonding film 3.
The die attachment temperature is preferably 80 ℃ or higher, more preferably 90 ℃ or higher. The die bonding temperature is preferably 150 ℃ or lower, and more preferably 130 ℃ or lower. By setting to 150 ℃ or lower, occurrence of warpage can be prevented.
Then, the adherend 61 with the semiconductor chip is heated under pressure, whereby the die bonding film 3 is thermally cured, and the semiconductor chip 5 is fixed to the adherend 6. By thermally curing the die-bonding film 3 under a pressurized condition, a gap existing between the die-bonding film 3 and the adherend 6 can be eliminated, and an area where the die-bonding film 3 and the adherend 6 are in contact can be secured.
Examples of the method of heating under pressurized conditions include the following methods: the adherend 61 with a semiconductor chip disposed in a chamber filled with an inert gas is heated.
The pressure of the pressurized atmosphere is preferably 0.5kg/cm2(4.9×10-2MPa) or more, more preferably 1kg/cm2(9.8×10- 2MPa) or more, and more preferably 5kg/cm2(4.9×10-1MPa) or more. If it is 0.5kg/cm2As described above, the void existing between the die-bonding film 3 and the adherend 6 can be easily eliminated. The pressure of the pressurized atmosphere is preferably 20kg/cm2(1.96MPa) or less, more preferably 18kg/cm2(1.77MPa) or less, and more preferably 15kg/cm2(1.47MPa) or less. If it is 20kg/cm2Hereinafter, the exposure of the die bonding film 3 due to the excessive pressurization can be suppressed.
The heating temperature when heating is performed under pressurized conditions is preferably 80 ℃ or higher, more preferably 100 ℃ or higher, further preferably 120 ℃ or higher, and particularly preferably 170 ℃ or higher. When the temperature is 80 ℃ or higher, the die bonding film 3 can be made to have an appropriate hardness, and the voids can be effectively eliminated by pressure curing. The heating temperature is preferably 260 ℃ or lower, more preferably 200 ℃ or lower, and still more preferably 180 ℃ or lower. If the temperature is 260 ℃ or lower, the decomposition of the die bonding film 3 before curing can be prevented.
The heating time is preferably 0.1 hour or more, more preferably 0.2 hour or more, and further preferably 0.5 hour or more. If the time is 0.1 hour or more, the effect of pressurization can be sufficiently obtained. The heating time is preferably 24 hours or less, more preferably 3 hours or less, and further preferably 1 hour or less.
As shown in fig. 8, a wire bonding step is performed in which the tip of the terminal portion (inner lead) of the adherend 6 is electrically connected to the electrode pad on the semiconductor chip 5 by a bonding wire 7. As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The temperature at the time of wire bonding is preferably 80 ℃ or higher, more preferably 120 ℃ or higher, and the temperature is preferably 250 ℃ or lower, more preferably 175 ℃ or lower. The heating time is at least several seconds to several minutes (for example, 1 second to 1 minute). In a state where the heating is performed so as to reach the temperature range, the wire connection is performed by using the vibration energy by the ultrasonic wave and the pressure bonding energy by applying the pressure.
Then, a sealing step of sealing the semiconductor chip 5 with the sealing resin 8 is performed. This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step is performed by molding the sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is preferably 165 ℃ or higher, more preferably 170 ℃ or higher, and the heating temperature is preferably 185 ℃ or lower, more preferably 180 ℃ or lower.
The sealing material may be further heated as necessary (post-curing step). This allows the sealing resin 8, which has not been sufficiently cured in the sealing step, to be completely cured. The heating temperature can be set as appropriate.
As described above, by a method including the step of fixing the semiconductor chip 5 to the adherend 6 by the die bonding film 3 and the step of curing the die bonding film 3 after the step of fixing the semiconductor chip 5 to the adherend 6, a semiconductor device can be suitably manufactured.
(modification 1)
As shown in fig. 9, in modification 1, the die bonding film 3 includes: a bonding portion 31 for bonding the semiconductor wafer 4, and a non-bonding portion 32 disposed around the bonding portion 31. The non-adhesive portion 32 is provided with a mark 301. Since the mark 301 is provided in the non-adhesive portion 32, alignment can be easily performed when the die bond film 3 is bonded to the dicing tape 1. In addition, the presence or absence of the die bonding film 3 can be easily determined. In addition, at the time of quality inspection, abnormality in the shape of the die bonding film 3 can be detected.
The marker 301 may be optically recognizable. For example, in the mark 301, the transmittance of light in the entire region having a wavelength of 400nm to 600nm is preferably 0% to 20%, more preferably 0% to 10%. If the content is 20% or less, the position can be easily recognized by the sensor.
The method of providing the mark 301 in the non-attached portion 32 is not particularly limited, and examples thereof include the following methods: a method of disposing the mark 301 by ink-jet, a method of forming a pattern edge coating at the time of coating the die-bonding film 3 to dispose the mark 301, and a method of disposing the mark 301 by a sticker film or a tape.
(modification 2)
As shown in fig. 10, in modification 2, the spacer 9 includes: a laminated portion 91 in contact with the die bond film 3, an outer peripheral portion 92 disposed on the outer periphery of the laminated portion 91, and a peripheral portion 93 disposed on the periphery of the outer peripheral portion 92. The laminated portion 91 is in contact with the die-bonding film 3. On the other hand, the outer peripheral portion 92 and the peripheral portion 93 do not contact the die-bonding film 3.
The depth of the score 901 is preferably 5 μm to 45 μm for the reason that the position can be easily recognized.
(modification 3)
As shown in fig. 11, in modification 3, a score 901 is provided in a part of the outer peripheral portion 92.
(modification 4)
As shown in fig. 12, in modification 4, a score 901 is provided on the entire edge of the laminated portion 91. Since the notch 901 is provided at the edge of the laminated portion 91, alignment can be easily performed when the die bond film 3 is bonded to the dicing tape 1. Note that the score 901 may be provided in a part of the edge of the laminated portion 91.
(others)
The above modifications can be combined as appropriate.
Examples
The present invention will be described in detail below with reference to examples, but the present invention is not limited to the following examples as long as the gist of the present invention is not exceeded.
The components used in the examples are explained below.
Acrylic rubber: テイサンレジン SG-P3 (epoxy group-containing acrylate copolymer, Mw: 85 ten thousand, glass transition temperature: 12 ℃ C.) made by Citsuba Kasei corporation
Silica filler 1: YA050C (silica, average particle diameter: 50nm) manufactured by Admatechs corporation
Silica filler 2: SO-E1 (silica, average particle diameter: 250nm) manufactured by Admatechs corporation
Silica filler 3: SO-E2 (silica, average particle diameter: 500nm) manufactured by Admatechs corporation
[ preparation of dicing die bonding film ]
Acrylic rubber and a silica filler were dissolved in Methyl Ethyl Ketone (MEK) at the compounding ratios shown in table 1 and dispersed to obtain an adhesive composition solution having a viscosity suitable for application. Then, an adhesive composition solution was applied to a polyethylene terephthalate film (hereinafter, also referred to as a release-treated film) having a thickness of 50 μm after a silicone release treatment, and then dried at 130 ℃ for 2 minutes to obtain a die-bonding film (thickness: 25 μm).
The die bond film was attached to an adhesive layer of a dicing tape (P2130G manufactured by ritonak corporation) at 25 ℃ to prepare a dicing die bond film.
[ evaluation ]
The following evaluation was performed using the dicing die-bonding film. The results are shown in Table 1.
(haze)
The dicing tape was removed from the dicing die-bonding film to obtain a die-bonding film.
The chip bonding film was set in a sample chamber of a turbidimeter (NDH 2000 manufactured by japan electrochromism industry), and the haze was measured using a light source D65.
(light transmittance of die-bonding film)
The dicing tape was removed from the dicing die-bonding film to obtain a die-bonding film.
The die-bonding film was fixed to a film holder (FLH-741, manufactured by Shimadzu corporation), and the parallel transmittance was measured at a measurement speed of 2000nm/min, a spot diameter of 2mm (diameter), and a measurement range of 350 to 800nm, using an ultraviolet-visible near-infrared spectrophotometer (V-670 DS, manufactured by JASCO corporation).
(transmittance of die-bonding film after 200% stretching)
The dicing tape was removed from the dicing die-bonding film to obtain a die-bonding film.
A test film having a length of 2 cm. times.4 cm. times.25 μm was cut out from the die-bonding film. On the test film, 2 polyimide tapes were attached so as to provide a 1cm interval. Thus, a test film and a test piece having 2 polyimide tapes disposed on the test film at an interval of 1cm were obtained. The test film of the test piece was stretched until the interval of the polyimide tape reached 2 cm. The test piece in a stretched state was fixed to a measuring mask having a diameter of 2mm with an adhesive tape. Then, the test piece was set in a film holder (FLH-741, manufactured by Shimadzu corporation), and the parallel transmittance of the stretched portion of the test film was measured using an ultraviolet-visible near-infrared spectrophotometer (V-670 DS, manufactured by Nippon spectral Co., Ltd.) under conditions of a measurement speed of 2000nm/min, a dot diameter of 2mm (diameter), and a measurement range of 350 to 800 nm.
(light transmittance of dicing tape)
The die-bonding film was removed from the dicing die-bonding film to obtain a dicing tape.
The dicing tape was fixed to a film holder (FLH-741, manufactured by Shimadzu corporation), and the parallel transmittance was measured at a measurement speed of 2000nm/min, a spot diameter of 2mm (diameter), and a measurement range of 350 to 800nm, using an ultraviolet-visible near-infrared spectrophotometer (V-670 DS, manufactured by JASCO corporation). The 2 nd main surface of the base material of the dicing tape is irradiated with light.
(surface roughness Ra)
The surface roughness Ra was measured on the 2 nd main surface of the base material of the dicing tape.
The surface roughness was measured according to JIS B0601 using a non-contact three-dimensional roughness measuring apparatus (NT3300) manufactured by Veeco corporation. The measurement conditions are 50 times, and a Median filter (media filter) is applied to the measurement data to obtain a measurement value. The measurement was performed 5 times while changing the measurement site, and the average value was defined as the surface roughness.
(handling Property)
The silicon wafer, the thickness of which was adjusted to 50 μm by polishing, was bonded to the dicing die-bonding film at 60 ℃ under a pressure of 0.1 MPa. The silicon wafer and the die bonding film were cut into a size of 5mm × 5mm using a dicing apparatus (DFD6361, manufactured by DISCO corporation) to obtain a die for die bonding. The chip bonding chip includes a chip and a die bonding agent disposed on the chip. The die bonding die was bonded to a flat copper lead frame using a die bonding apparatus (SPA-300, manufactured by shinkawa Co., Ltd.) using a rubber collet (ラバーコレット) having a bottom surface with an area of 5mm × 5mm and a suction hole with a diameter of 1mm provided at the center of the bottom surface at 120 ℃ for 0.1 second and 0.1 kg. Thus, a lead frame with a chip is obtained. The presence or absence of a void was confirmed in the lead frame with a chip by using an ultrasonic imaging apparatus (Hybrid SAT manufactured by Hitachi Power Solutions corporation). A lead frame with a chip in which a gap of 1mm or more was observed was selected, and whether or not the gap could be observed was confirmed by an optical microscope (VHX-2000 manufactured by Kenzhi Co., Ltd.) from the side surface of the chip. The case where the voids could be observed was judged as "o", and the case where the voids could not be observed was judged as "x".
[ TABLE 1]
Claims (9)
1. A dicing die-bonding film comprising:
dicing tape comprising a substrate and an adhesive layer disposed on the substrate,
A die-bonding film having a haze of 0% to 25% disposed on the adhesive layer,
the substrate has both surfaces defined by a 1 st main surface in contact with the adhesive layer and a 2 nd main surface opposite to the 1 st main surface, and the 2 nd main surface has a surface roughness Ra of 0.5 [ mu ] m or more,
the transmittance of the substrate for light in the entire region having a wavelength of 400 to 600nm is 0 to 20%,
the transmittance of light having a wavelength of 600nm in a state where the die-bonding film is elongated to 200% is lower by 5% or more than the transmittance of light having a wavelength of 600nm in a state where the die-bonding film is not elongated.
2. The dicing die-bonding film according to claim 1, wherein,
the die bonding film includes a bonding portion for bonding a semiconductor wafer and a non-bonding portion arranged around the bonding portion,
the non-adhesive portion is provided with a mark.
3. The dicing die-bonding film according to claim 2, wherein,
the marks can be optically recognized.
4. The dicing die-bonding film according to claim 1 or 2, wherein,
the surface roughness Ra of the 2 nd main surface is 0.5 to 5 mu m.
5. A laminated film comprising a separator and a dicing die-bonding film,
the dicing die-bonding film has a die-bonding film and a dicing tape,
the die bonding film is arranged on the separator and has a haze of 0% to 25%,
the dicing tape comprises an adhesive layer disposed on the die bonding film, and a base material disposed on the adhesive layer,
the substrate has both surfaces defined by a 1 st main surface in contact with the adhesive layer and a 2 nd main surface opposite to the 1 st main surface, the 2 nd main surface has a surface roughness Ra of 0.5 [ mu ] m or more, the substrate has a light transmittance of 0 to 20% over the entire wavelength range of 400 to 600nm,
the transmittance of light having a wavelength of 600nm in a state where the die-bonding film is elongated to 200% is lower by 5% or more than the transmittance of light having a wavelength of 600nm in a state where the die-bonding film is not elongated.
6. The laminate film of claim 5, wherein,
the spacer includes a laminated portion in contact with the die bonding film, and an outer peripheral portion arranged on an outer periphery of the laminated portion,
a mark is provided on the outer peripheral portion.
7. The laminate film of claim 5, wherein,
the spacer includes a lamination portion in contact with the die bonding film,
a mark is provided on an edge of the laminated portion.
8. The laminated film according to claim 6 or 7,
the indicia are scores.
9. The laminate film of claim 8, wherein,
the depth of the nicks is 5-45 mu m.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-074040 | 2014-03-31 | ||
| JP2014074040A JP6374199B2 (en) | 2014-03-31 | 2014-03-31 | Die bond film, dicing die bond film and laminated film |
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| Publication Number | Publication Date |
|---|---|
| CN104946147A CN104946147A (en) | 2015-09-30 |
| CN104946147B true CN104946147B (en) | 2020-08-11 |
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| CN201510142546.5A Active CN104946147B (en) | 2014-03-31 | 2015-03-27 | Die bonding film, dicing die bonding film, and laminated film |
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| Country | Link |
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| JP (1) | JP6374199B2 (en) |
| KR (1) | KR102349546B1 (en) |
| CN (1) | CN104946147B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| SG11201802886RA (en) * | 2015-10-21 | 2018-05-30 | Furukawa Electric Co Ltd | Surface protection adhesive tape for semiconductor wafer backgrinding, and semiconductor wafer grinding method |
| WO2017090440A1 (en) * | 2015-11-24 | 2017-06-01 | リンテック株式会社 | Circuit member-connecting resin sheet |
| JP6422462B2 (en) * | 2016-03-31 | 2018-11-14 | 古河電気工業株式会社 | Electronic device packaging tape |
| JP6670177B2 (en) * | 2016-05-30 | 2020-03-18 | 日東電工株式会社 | Die bond film, dicing die bond film, and method of manufacturing semiconductor device |
| JP6877982B2 (en) * | 2016-12-08 | 2021-05-26 | 日東電工株式会社 | Adhesive film, dicing / die bond film, semiconductor device manufacturing method and semiconductor device |
| JP7030414B2 (en) * | 2017-02-14 | 2022-03-07 | 株式会社Ｓｃｒｅｅｎホールディングス | Board processing method and its equipment |
| KR20200135279A (en) * | 2018-03-23 | 2020-12-02 | 린텍 가부시키가이샤 | Die bonding film, dicing die bonding sheet, and manufacturing method of semiconductor chip |
| WO2020137934A1 (en) * | 2018-12-28 | 2020-07-02 | リンテック株式会社 | Film-like adhesive agent, layered sheet, composite sheet, and method for producing layered body |
| WO2020137944A1 (en) * | 2018-12-28 | 2020-07-02 | リンテック株式会社 | Film-like adhesive, laminate sheet, composite sheet, and manufacturing method for laminate |
| CN111128807B (en) * | 2019-12-27 | 2023-06-23 | 青岛歌尔微电子研究院有限公司 | Incomplete wafer processing method, device, equipment and medium |
| CN117511426B (en) * | 2024-01-05 | 2024-04-12 | 深圳市长松科技有限公司 | Film for packaging and blocking water vapor, semiconductor film packaging method and structure |
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| JP5157208B2 (en) * | 2006-03-20 | 2013-03-06 | 日立化成株式会社 | Die bond dicing sheet |
| CN101669194A (en) * | 2007-04-19 | 2010-03-10 | 积水化学工业株式会社 | Dicing/die bonding tape and method for manufacturing semiconductor chip |
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| JP2010265416A (en) * | 2009-05-15 | 2010-11-25 | Hitachi Chem Co Ltd | Film adhesive |
| JP5023225B1 (en) * | 2011-03-10 | 2012-09-12 | 日東電工株式会社 | Method for manufacturing film for semiconductor device |
| JP2013001862A (en) * | 2011-06-20 | 2013-01-07 | Hitachi Chemical Co Ltd | Adhesive sheet, method for manufacturing semiconductor device, and semiconductor device |
| WO2014021450A1 (en) * | 2012-08-02 | 2014-02-06 | リンテック株式会社 | Film-like adhesive, adhesive sheet for semiconductor junction, and method for producing semiconductor device |
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| CN101290872A (en) * | 2007-04-18 | 2008-10-22 | 信越化学工业株式会社 | Method for manufacturing bonded substrate |
| CN101981654A (en) * | 2008-04-01 | 2011-02-23 | 信越化学工业株式会社 | Method for producing SOI substrate |
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| JP6374199B2 (en) | 2018-08-15 |
| KR20150113829A (en) | 2015-10-08 |
| TW201542756A (en) | 2015-11-16 |
| JP2015198120A (en) | 2015-11-09 |
| TWI667318B (en) | 2019-08-01 |
| CN104946147A (en) | 2015-09-30 |
| KR102349546B1 (en) | 2022-01-10 |
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