CN101290872A - Method for manufacturing bonded substrate - Google Patents
Method for manufacturing bonded substrate Download PDFInfo
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- CN101290872A CN101290872A CN 200810093348 CN200810093348A CN101290872A CN 101290872 A CN101290872 A CN 101290872A CN 200810093348 CN200810093348 CN 200810093348 CN 200810093348 A CN200810093348 A CN 200810093348A CN 101290872 A CN101290872 A CN 101290872A
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Abstract
When manufacturing a bonded substrate using an insulator substrate as a handle wafer, there is provided a method for manufacturing a bonded substrate which can be readily removed after carried and after mounted by roughening a back surface of the bonded substrate (corresponding to a back surface of the insulator substrate) and additionally whose front surface can be easily identified like a process of a silicon semiconductor wafer in case of the bonded substrate using a transparent insulator substrate as a handle wafer. There is provided a method for manufacturing a bonded substrate in which an insulator substrate is used as a handle wafer and a donor wafer is bonded to a front surface of the insulator substrate, the method comprises at least that a sandblast treatment is performed with respect to a back surface of the insulator substrate.
Description
Technical field
The present invention relates to a kind of manufacture method of adhesive substrates, particularly relate to a kind of manufacture method that on the surface of insulating properties substrate, is formed with the adhesive substrates of silicon thin film.
Background technology
In order to seek further high performance of semiconductor device, silicon-on-insulator (SOI (Silicon oninsulator)) substrate is gazed in recent years.And, support substrate (support chip (handle wafer)) is not silicon (SOQ (Silicon on quartz)) substrate and silicon-on-glass (SOG (Silicon onglass)) substrate etc. on the quartz of silicon, is applied to TFT-LCD or high frequency (RF) device, other MEMS (micro electro mechanical system) (MEMS) goods etc. by expectation yet.
Above-mentioned SOQ substrates etc. propose a kind of manufacture method, be for example with silicon substrate as donor wafer (donor wafer), with quartz base plate as support chip, and these dissimilar substrates fitted and make (opening the 2006-324530 communique) with reference to the Japan Patent spy.In the adhesive substrates of so making, quartz base plate is normally made with the twin polishing that milled processed is carried out at the surface and the back side simultaneously, therefore the back side also is minute surface, the common SOI substrate made from silicon substrate is fitted each other is different, and can have the situation that has problems in operation, the evaluation.
As one of such problem, can enumerate as on device carrying and fixedly during the SOQ substrate, wafer connects airtight in platform and is difficult to take out from platform; More owing to be transparency carrier, the identification difficulty at the surface and the back side, and can bring out operate miss in the processing.
Summary of the invention
The present invention develops in view of the above problems, its objective is the manufacture method that a kind of adhesive substrates is provided, when using the insulating properties substrate to make adhesive substrates, by with the back side (also being the back side of the insulating properties substrate) asperitiesization of this adhesive substrates and easy carrying and after mounting, take out as support chip; And then, providing a kind of method of making bonded wafer for transparent insulating substrate this adhesive substrates as support chip, the identification on its surface more operation with semiconductor silicon wafer is easy equally.
In order to solve above-mentioned problem, the invention provides a kind of manufacture method of adhesive substrates, be that the insulating properties substrate is used for support chip, and on the surface of this insulating properties substrate, the method of the manufacturing adhesive substrates of applying donor wafer, it imposes sandblast (sandblast) and handles at least to the back side of above-mentioned insulating properties substrate.
So, the insulating properties substrate is being used for support chip, and on the surface of this insulating properties substrate in the method for the manufacturing adhesive substrates of applying donor wafer, impose blasting treatment by the back side to the insulating properties substrate, the back side roughening of insulating properties substrate can be carried easily by asperitiesization and is taken out after mounting, for example, and then for transparent insulating substrate this adhesive substrates as support chip, then more the operation with semiconductor silicon wafer is easy equally in the identification on its surface.
And, the invention provides a kind of manufacture method of adhesive substrates, be that the insulating properties substrate is used for support chip, and on the surface of this insulating properties substrate, the method of the manufacturing adhesive substrates of applying donor wafer, after being formed with the adhesive substrates of silicon thin film on the surface that is ready for above-mentioned insulating properties substrate, the back side to this adhesive substrates imposes blasting treatment at least for it.
So, then by asperitiesization and easily carrying and after mounting, taking out, and then for transparent insulating substrate this adhesive substrates as support chip, then more the operation with semiconductor silicon wafer is easy equally in the identification on its surface.
And; the invention provides a kind of manufacture method of adhesive substrates; be on the surface of insulating properties substrate, to form silicon thin film; and make the method for manufacturing adhesive substrates of the back side roughening of above-mentioned insulating properties substrate; it is ready for the adhesive substrates that is formed with silicon thin film on the surface of above-mentioned insulating properties substrate at least earlier; protective tapes is attached on the silicon thin film at least of this adhesive substrates, to the back side of above-mentioned insulating properties substrate, imposes blasting treatment then.
So, to the silicon thin film that is less than adhesive substrates, paste after the protective tapes, the back side of insulating properties substrate is imposed the technical characterictic of blasting treatment, so carry easily by asperitiesization and after mounting, take out owing to comprise; And then for transparent insulating substrate this adhesive substrates as support chip, the identification on its surface more operation with semiconductor silicon wafer is easy equally, then can make the surface of silicon thin film not be subjected to the influence of blasting treatment by protective tapes simultaneously.
At this moment, the back side of above-mentioned insulating properties substrate is imposed after the blasting treatment, above-mentioned protective tapes can be peeled off, and, handle above-mentioned adhesive substrates with the solution of hydrofluoric acid containing.
After the blasting treatment, because aforementioned protective tapes is peeled off, and with the solution-treated adhesive substrates of hydrofluoric acid containing, and can suppress dust effectively from the concavo-convex place, the back side that imposes blasting treatment.Therefore, can suppress the generation of particle contamination.
And, the invention provides a kind of manufacture method of adhesive substrates, be on the surface of insulating properties substrate, to form silicon thin film, and make the method for manufacturing adhesive substrates of the back side roughening of above-mentioned insulating properties substrate, it is ready for the adhesive substrates that is formed with silicon thin film on the surface of above-mentioned insulating properties substrate at least earlier, on the silicon thin film at least of this adhesive substrates, form organic membrane, after then the back side of above-mentioned insulating properties substrate being imposed blasting treatment, with the above-mentioned adhesive substrates of the solution-treated of hydrofluoric acid containing, remove above-mentioned organic membrane again.
So, in the manufacture method of adhesive substrates of the present invention, owing to comprise: on the silicon thin film of adhesive substrates, form organic membrane at least, and after the back side of insulating properties substrate imposed blasting treatment, with the solution-treated adhesive substrates of hydrofluoric acid containing, remove the technical characterictic of organic membrane again; Therefore during with the solution-treated of hydrofluoric acid containing, silicon thin film is covered by organic membrane, and can prevent that the solution of hydrofluoric acid containing from directly contacting with silicon thin film.
Therefore, even have for example situation of HF defective in adhesive substrates, during with the solution-treated adhesive substrates of hydrofluoric acid containing, can prevent that also insulating properties substrate (quartz base plate etc.) etching that hydrofluoric acid soaks into, will be present under the silicon thin film by the HF defective from the face side of silicon thin film from making the defective condition of enlarged.
And, can prevent effectively that hydrofluoric acid from soaking between insulating properties substrate and silicon thin film formed thereon and cause silicon thin film to peel off.
And; the invention provides a kind of manufacture method of adhesive substrates; be on the surface of insulating properties substrate, to be formed with silicon thin film; and make the method for manufacturing adhesive substrates of the back side roughening of above-mentioned insulating properties substrate; it is ready for the adhesive substrates that is formed with silicon thin film on the surface of above-mentioned insulating properties substrate at least earlier; on the silicon thin film at least of this adhesive substrates, form organic membrane; and on this organic membrane, paste protective tapes; after then the back side of above-mentioned insulating properties substrate being imposed blasting treatment; above-mentioned protective tapes is peeled off; and, remove above-mentioned organic membrane again with the above-mentioned adhesive substrates of the solution-treated of hydrofluoric acid containing.
So; in the manufacture method of adhesive substrates of the present invention; at least; at first be ready for the adhesive substrates that is formed with silicon thin film on the surface of above-mentioned insulating properties substrate; on the silicon thin film at least of this adhesive substrates, form organic membrane; and paste protective tapes on this organic membrane, so protective tapes is to be affixed on organic membrane but not directly to be affixed on silicon thin film.
Therefore, the back side of insulating properties substrate imposed blasting treatment after, when peeling off protective tapes, can prevent to import owing to peel off this protective tapes damage with the surfacial spalling of silicon thin film etc.
And then, because just remove organic membrane after the solution-treated adhesive substrates with hydrofluoric acid containing, therefore during with the solution-treated of hydrofluoric acid containing, silicon thin film is covered by organic membrane, but and the utmost point prevents effectively that the solution of hydrofluoric acid containing from directly contacting with silicon thin film, the expansion of HF defective, silicon thin film are peeled off etc.
In addition, above-mentioned insulating properties substrate can be any of quartz base plate, glass substrate, sapphire substrate, aluminum oxide substrate.
So, the insulating properties substrate can be any of quartz base plate, glass substrate, sapphire substrate, aluminum oxide substrate, and when making the situation of SOQ substrate, SOG substrate, SOS substrate, SOA (Silicon onAlumina) substrate, the present invention is particularly suitable for.
And preferred above-mentioned organic membrane is to be formed by coating.
So, if form organic membrane by coating, then organic membrane forms easily, and is quite easy.
At this moment, above-mentioned organic membrane can be made as the photoresistance film.
If organic membrane is made as the photoresistance film, photoresist also can use dust head in the past, and can form organic membrane simply.
And, removing of above-mentioned organic membrane, can handle by any of Ozone Water, sulfuric acid, hot sulfuric acid, sulfuric acid-hydrogen peroxide mixed liquor (sulfuric acid-hydrogen peroxide mixture), alcohols, acetone, or also can be undertaken by oxygen plasma treatment or UV treatment.
So,, or undertaken, can easily remove organic membrane by oxygen plasma treatment or UV treatment if removing of organic membrane is to handle by any of Ozone Water, sulfuric acid, hot sulfuric acid, sulfuric acid-hydrogen peroxide mixed liquor, alcohols, acetone.
And above-mentioned protective tapes can be made as dicing tape (dicing tape).
So, protective tapes can be made as dicing tape, and can protect silicon thin film etc. fully when blasting treatment.
And the preparation of above-mentioned adhesive substrates comprises the steps: silicon substrate at least or is formed with the silicon substrate of oxide-film on its surface, inject from the surface hydrogen ion or noble gas ion or this two and form ion implanted layer; With above-mentioned silicon substrate or be formed with on its surface the silicon substrate of oxide-film the ion injection face, with want and the surface of the above-mentioned insulating properties substrate that this ion injection face is fitted, it connected airtight and fit; With above-mentioned ion implanted layer is boundary, with above-mentioned silicon substrate or be formed with the silicon substrate of oxide-film on its surface, mechanically peels off and filming, and form silicon thin film on the surface of above-mentioned insulating properties substrate.
And the preparation of above-mentioned adhesive substrates comprises the steps: silicon substrate at least or is formed with the silicon substrate of oxide-film on its surface, inject from the surface hydrogen ion or noble gas ion or this two and form ion implanted layer; To above-mentioned silicon substrate or be formed with on its surface the silicon substrate of oxide-film the ion injection face, with want and one of them face on the surface of the above-mentioned insulating properties substrate that this ion injection face is fitted, impose surface activation process; With above-mentioned silicon substrate or be formed with on its surface the silicon substrate of oxide-film the ion injection face, with the surface of above-mentioned insulating properties substrate, it connected airtight and fit; With above-mentioned ion implanted layer is boundary, with above-mentioned silicon substrate or be formed with the silicon substrate of oxide-film on its surface, mechanically peels off and filming, and form silicon thin film on the surface of above-mentioned insulating properties substrate.
When this was in and mechanically peels off, if use its back side insulating properties substrate of asperitiesization, the stress when then mechanically peeling off owing to this had local difference, makes the thickness of the silicon of transfer printing that deviation be arranged, thereby does not expect to use.Particularly, can enumerate: when mechanically peeling off, make stiffening plate connect airtight the situation of controlling peeling rate in the back side, owing to the power of connecting airtight with stiffening plate has local difference, and make the stress when mechanically peeling off that local difference be arranged, the thickness of the silicon of transfer printing thereby deviation is arranged equally.
So, then on the surface that can be ready for the insulating properties substrate, be formed with in the adhesive substrates of dissimilar substances of silicon thin film, also become the thing of purposes such as can being suitable for TFT-LCD and high frequency (RF) device.
And, before above-mentioned blasting treatment and/or after handling, the surface of above-mentioned silicon thin film can be given mirror finish.
So, before blasting treatment, also the surface that makes the silicon thin film of device etc. can be given mirror finish; in the present invention by organic membrane and protective tapes; and can after sandblast, keep mirror status, and, certainly also can be after blasting treatment the surface of silicon thin film be given mirror finish.
If the manufacture method of the adhesive substrates that the present invention is so then can produce a kind of adhesive substrates, even the insulating properties substrate is used for the adhesive substrates of support chip, also can be and carrying and after mounting, taking out easily by asperitiesization; And then for transparent insulating substrate this adhesive substrates as support chip, then more the operation with semiconductor silicon wafer is easy equally in the identification on its surface.
Description of drawings
Fig. 1 is the process chart of example of an operation of the manufacture method of expression adhesive substrates of the present invention.
Fig. 2 is the process chart of an example of the coating squence of expression silicon substrate and insulating properties substrate.
Wherein, description of reference numerals is as follows:
10 silicon substrates, 11 ion implanted layers
12 ion injection faces, 20 insulating properties substrates
22 binding faces 40 draw back uses member
50 draw back with member 60 adhesive substrates
60 ' adhesive substrates, 61 silicon thin films
70 organic membrane, 80 protective tapes
Embodiment
Following with reference to the description of drawings embodiments of the present invention, but the present invention is not limited to this.
Fig. 1 is the process chart of example of an operation of the manufacture method of expression adhesive substrates of the present invention.
All flow processs are described, at first, are ready for the adhesive substrates (operation 1) that is formed with silicon thin film on the surface of insulating properties substrate.For the adhesive substrates of being prepared, on silicon thin film, form organic membrane (operation 2), paste protective tapes (operation 3) more thereon.Then; impose blasting treatment and with the back side roughening (operation 4) of adhesive substrates; peel off (operation 5) behind the protective tapes; with the solution-treated adhesive substrates of hydrofluoric acid containing the back etched of adhesive substrates is handled (operation 6); then; remove organic membrane (operation 7), then can obtain the adhesive substrates behind being suppressed of particle contamination etc., the back side roughening.
Below, further describe in detail at each operation.
(operation 1)
At the beginning, be ready for the adhesive substrates 60 that is formed with silicon thin film 61 on the surface of insulating properties substrate 20 earlier.Also promptly, prepare as donor wafer silicon substrate, and, this two applying is made as the insulating properties substrate of support chip.
Fig. 2 is the example that the order of this adhesive substrates is made in expression.As Fig. 2 (A), at first prepared silicon substrate 10 and insulating properties substrate 20.
In addition, particularly as donor wafer, also can be the silicon substrate that is formed with oxide-film in the surface.If select these materials as donor wafer, then can produce adhesive substrates with silicon thin film.
And, as support chip insulating properties substrate 20 just, for example also can use quartz base plate or other glass substrate, sapphire substrate, aluminum oxide substrate.Among these substrates,, be not particularly limited so long as substrate transparent, the tool insulating properties gets final product.The purpose of the semiconductor device that can corresponding will make etc., and suitably select.Herein, illustrate as example with the situation of using quartz base plate.
Then, shown in Fig. 2 (B), hydrogen ion is injected and formation ion implanted layer 11 from the surface of silicon substrate 10 (ion injection face) 12.
The formation of this ion implanted layer 11 is not hydrogen ion, noble gas ion or hydrogen ion and noble gas ion all can be given ion and inject yet.Inject other ion implanting conditions such as energy, implantation dosage, implantation temperature,, then suitably select to get final product as long as can obtain the film of specific thicknesses.
In addition,, and carry out ion by oxide-film and inject if be used in the silicon substrate that the surface is formed with oxide-film, the effect of the tunnel effect of the injection ion that then can be inhibited, and than the deviation that can reduce the injection degree of depth of ion.Thus, can form the higher film of thickness homogeneity.
Then, shown in Fig. 2 (C),, impose surface activation process to the ion injection face 12 of silicon substrate 10 and the binding face 22 of insulating properties substrate 20.In addition, the binding face 22 of so-called insulating properties substrate 20 is the faces of fitting with silicon substrate 10 in the following sequence.
Certainly, also can be only to one of them face of the binding face 22 of the ion injection face 12 of silicon substrate 10 and insulating properties substrate 20, impose surface activation process.
At this moment, for example can utilize oxygen plasma treatment to carry out surface activation process.The wafer of mounting after RCA clean to wait cleans in vacuum chamber, import plasma with gas (oxygen) after, be exposed in the high-frequency plasma about 100W about about 5～30 seconds, the surface is given plasma treatment.
In addition, as plasma gas, be not limited to oxygen, other also can use the mist of for example hydrogen, argon gas or these mist or hydrogen and helium.And, also can use the nitrogen of inert gas.Suitably selecting to be fit to condition person gets final product.
The face after the surface activation process of imposing of like this then each substrate 10,20, its OH base increase and wait and activate.Therefore, under this state, if the ion injection face 12 of silicon substrate and the binding face 22 of insulating properties substrate can be connected airtight, then can more securely wafer be fitted by hydrogen bond etc.
In addition, also can not impose this surface activation process, and carry out follow-up bonding process.
Then, shown in Fig. 2 (D), the binding face 22 of the ion injection face 12 of silicon substrate and insulating properties substrate is connected airtight and fit.
So, if will be the surface of surface activation process as binding face, under for example decompression or normal pressure, wafer is connected airtight with room temperature, even then do not impose high-temperature process, also two plates can be conformed to fully securely and can bear the degree that (anti-live) follow-up mechanicalness is peeled off.
In addition, after the operation that this silicon substrate 10 and insulating properties substrate 20 are connected airtight, also the wafer that this can have been connected airtight carries out with 100～400 ℃ of heat treated heat treatment steps.
By imposing this heat treatment, and can improve the applying intensity of silicon substrate 10 and insulating properties substrate 20.Particularly, if 100～300 ℃ of heat treatment temperatures, even the then applying of the substrate of foreign material, also rare generation is because the heat distortion that difference caused of thermal coefficient of expansion, slight crack, the possibility peeled off.If can improve applying intensity, then can reduce the generation of the unfavorable condition in stripping process.
Then, shown in Fig. 2 (E), for example make to draw back and connect airtight in silicon substrate 10 and when keeping silicon substrate 10, keep insulating properties substrates 20 by drawing back with member 50 with member 40.
Use member as drawing back, can use by drawing back of constituting of the sucker more than 1 with member or by porous material constitute and by vacuum adsorption sorption drawing back on each substrate 10,20 use member, but be not limited thereto.
Then, shown in Fig. 2 (F), end that is drawn back the side of being connected airtight from the ion implanted layer 11 of silicon substrate 10 with member 40, when giving external impact, by drawing back with member 40,50, silicon substrate 10, insulating properties substrate 20 are drawn back, in ion implanted layer 11 silicon substrate 10 is separated in regular turn towards the other end from an end (peeling away initial point) that gives external impact with insulating properties substrate 20 thus, and with silicon substrate 10 filmings.
As previously discussed, then shown in Fig. 2 (G), can obtain on the surface of insulating properties substrate 20, being formed with the adhesive substrates 60 of silicon thin film 61.
(operation 2)
After operation 1 is prepared adhesive substrates 60, shown in Fig. 1 (operation 2), on silicon thin film 61, form organic membrane 70.
This organic membrane 70 is though its material is not particularly limited the organic membrane of expectation for hydrofluoric acid is had patience.For example photoresist etc. is suitable for using.Below, organic membrane 70 is made the organic membrane that forms by photoresist describe.
And, preferred at this moment, as being covered in as the silicon thin film 61, all encirclements of silicon thin film 61 are formed organic membrane 70.
These be because, after operation 6 in, with the solution-treated adhesive substrates 60 of hydrofluoric acid containing, to prevent to be present in HF defective expansion in the silicon thin film 61 this moment, prevent the cause that silicon thin film 61 peels off from insulating properties substrate 20.
After blasting treatment, do not carry out etching work procedure if do not form organic membrane 70, be in the situation of quartz base plate for example then at the insulating properties substrate, as as above-mentioned when silicon thin film has the HF defective, hydrofluoric acid soaks into by above-mentioned defective from the surface of silicon thin film, then can make the quartz base plate that is present under the silicon thin film etched and defective is enlarged.This is the reason that causes device unfavorable condition etc.
And if hydrofluoric acid soaks between silicon thin film and quartz base plate, then this place of quartz base plate is etched, causes silicon thin film to peel off.
Yet, shown in Fig. 1 (operation 2), be pre-formed the organic membrane 70 that hydrofluoric acid is had patience because on silicon thin film 61, more be coated with silicon thin film 61, even after operation 6, adhesive substrates 60 is imposed etch processes, also can be surrounded by organic membrane 70 because of silicon thin film 61, and if hydrofluoric acid does not soak into by HF defective etc. from the surface of silicon thin film 61, the quartz base plate 20 under the etching silicon film 61 and enlarge defective does not then have hydrofluoric acid yet and enters between silicon thin film 61 and the quartz base plate 20 and make quartz base plate 20 etched, the situation that silicon thin film 61 is peeled off.
In addition, the formation method of organic membrane 70 is not particularly limited, and can for example form by coating.Then can form simply with coating method, thus preferred.
And, under the situation of coating photoresist, preferably carry out hexamethyldisilazane (HMDS) operation as pre-treatment.By carrying out the HMDS operation, and the photoresistance film that forms after can improving and the connecting airtight property of silicon thin film 61.
And then, also because improve these connecting airtight property, and also can after forming, the photoresistance film carry out soft roasting processing such as (softbake).
(operation 3)
Then, protective tapes 80 is affixed on the organic membrane 70.So, protective tapes 80 directly is not affixed on silicon thin film 61, but is affixed on the organic membrane 70, then after operation 5, when peeling off protective tapes 80, can prevent that the surface of silicon thin film 61 is stripped from together, and can not cause damage silicon thin film 61.
And, this protective tapes 80 after operation 4 when carrying out blasting treatment, do not decrease the wounded and get final product if can not cause, but be not defined in these materials especially silicon thin film 61 sides of adhesive substrates 60.For example can use dicing tape (dicing tape).
(operation 4)
As previously discussed; adhesive substrates 60 is on the silicon thin film 61 of the face side that is formed at insulating properties substrate 20; form organic membrane 70; stick protective tapes 80 again; to this adhesive substrates 60 (also be in its back side; the back side of insulating properties substrate 20) impose blasting treatment and intentional roughening, the back side can be learnt by sensing by optical sensor.
Blasting treatment in this operation 4 is not particularly limited, and for example can use device same, is undertaken by making its back sides of particle encounter such as aluminium oxide.
On the other hand, therefore different because the face side of adhesive substrates 60 (also promptly, being formed with the side of silicon thin film 61) is pasted with protective tapes 80 with the back side, do not have the situation of damage, roughening.
(operation 5)
Impose after the above-mentioned blasting treatment, protective tapes 80 is peeled off, the operation 6 after preparing against is carried out etch processes with the solution of hydrofluoric acid containing.In addition, what post protective tapes 80 herein is organic membrane 70, but not silicon thin film 61.Therefore with protective tapes 80 when organic membrane 70 is peeled off, can or not cause damage together with the sur-face peeling of silicon thin film 61 to silicon thin film 61 yet.
(operation 6)
Then, in operation 6,, handle adhesive substrates 60 with the solution of hydrofluoric acid containing.Also promptly, will impose the back side (back side of insulating properties substrate 20) of the adhesive substrates 60 after the blasting treatment, the solution by hydrofluoric acid containing carries out etch processes.The method is not particularly limited, and for example can be undertaken by the solution that adhesive substrates 60 be impregnated in hydrofluoric acid containing.So, by imposing etch processes in this wise, and can suppress from the mat blasting treatment and the dust that male and fomale(M﹠F) took place of roughening.
At this moment, be used for the solution of etch processes, so long as hydrofluoric acid containing, etch processes person can be carried out in quartz base plate or the back side of peeling off insulating properties substrates 20 such as substrate and get final product, and be not particularly limited.For example can use hydrofluoric acid, the buffered hydrofluoric acid aqueous solution etc., and its concentration etc. can determine suitably also.For example can experimentize repeatedly, moderately etching, and select to suppress the degree person of the dust that the concavo-convex place from blasting treatment takes place.
In addition, in this wise outside the back side (back side of the insulating properties substrate 20) etch processes with adhesive substrates 60, on the other hand, its face side (silicon thin film 61 sides) is then because be coated with the organic membrane 70 that hydrofluoric acid is had patience, the effect of organic membrane 70 performance shielding, and make the surface of silicon thin film 61 can directly not contact the solution of hydrofluoric acid containing.Therefore, even silicon thin film 61 has the HF defective, can prevent very effectively that also hydrofluoric acid from soaking into to insulating properties substrate 20, insulating properties substrate 20 etchings such as quartz base plate are made the defective condition of enlarged by its HF defective from the face side of silicon thin film 61.
And then shown in Fig. 1 (operation 2), if organic membrane 70 is formed and the applying boundary (binding face) of silicon thin film 61 and insulating properties substrate 20 can be buried, then the boundary of this applying part can directly not contact the solution of hydrofluoric acid containing.The situation of therefore, can prevent that the boundary member that hydrofluoric acid is fitted since then from soaking into, the insulating properties substrate is 20 etched, silicon thin film 61 peels off from insulating properties substrate 20.
(operation 7)
Afterwards, remove the organic membrane 70 of performance shielding action in the etch processes of operation 6.This method of removing is not particularly limited, and for example can handle by Ozone Water, sulfuric acid, hot sulfuric acid, sulfuric acid-hydrogen peroxide mixed liquor, alcohols, acetone etc. and remove.And, as other method, also can be and organic membrane 70 is removed by oxygen plasma treatment or UV treatment (UV processing).Only otherwise can be especially silicon thin film 61 is caused damage, can remove the organic membrane 70 that forms get final product on silicon thin film 61, can pass through the material etc. of organic membrane 70 and suitably determine.
By implementing as previously discussed operation 1 at least to operation 7, can obtain adhesive substrates 60 ', it forms in the silicon thin film 61, with the back side roughening of insulating properties substrate 20 on the surface of insulating properties substrate 20.This adhesive substrates 60 ', the particularly situation that does not have damage or peel off at silicon thin film 61 from insulating properties substrate 20, and, even there is the HF defective, can in above-mentioned manufacturing process, not enlarge defective yet.And then the rear side of insulating properties substrate 20 by outside the roughening suitably, also can suppress dust on the other hand effectively and take place, and can prevent after operation in situation such as generation particle contamination.
In addition, when the situation of the manufacture method that adhesive substrates of the present invention is described, narrate at the manufacture method of carrying out to operation 7 in herein as shown in Figure 1, but be not limited thereto certainly, also can further increase other operation whenever necessary by operation 1.For example, can be after the operation 5 of peeling off protective tapes 80, the operation of carrying out imposing by water, ultrasonic waves water etc. cleaning imposes the etch processes that the solution that passes through hydrofluoric acid containing of operation 6 carries out again.
Perhaps, also can in the operation before the operation 4 that imposes blasting treatment, carry out mirror finish earlier with making the surface of the silicon thin film 61 of device.So; even then mirror finish is before blasting treatment; because silicon thin film 61 is across organic membrane 70 and protected adhesive tape 80 is protected; it can not sustained damage by the surface of mirror finish when blasting treatment; protective tapes 80 is not directly to be affixed on silicon thin film 61; therefore can be when after blasting treatment, protective tapes 80 being peeled off with the sur-face peeling of silicon thin film 61 yet, and can fully keep its mirror status.
Certainly, also can be after blasting treatment once again the surface of silicon thin film 61 be given mirror finish, and, also can only after blasting treatment, give mirror finish.Can consider time that cost, labour, operation are required etc., and suitably decision.
And, also can enumerate following method as another embodiment of the present invention: do not use protective tapes 80, on silicon thin film 61, form organic membrane 70 earlier; then to the back side of insulating properties substrate 20; impose blasting treatment, carry out etch processes by hydrofluoric acid afterwards, remove organic membrane 70 again.Also promptly, carry out the method for the operation 1,2,4,6,7 of Fig. 1.By the method, the solution of hydrofluoric acid containing surely not directly contacts with silicon thin film 61, also can prevent peeling off of the expansion of HF defective and silicon thin film 61 etc.
In this situation, organic membrane 70 is preferably has patience or the adjustment of thickness process, and can bring into play the degree person as the effect of protective tapes in blasting treatment.
And then; as other example; also can not form organic membrane 70; and protective tapes 80 is affixed on the face side (surface of silicon thin film) of adhesive substrates; the back side is imposed blasting treatment, like this then when blasting treatment, can prevent that effectively the surface of silicon thin film from sustaining damage certainly by protective tapes 80.
In this situation,, be preferably and consider tackness etc. and select suitable person as protective tapes 80, with in after with protective tapes 80 when the sur-face peeling of silicon thin film, make the surface of silicon thin film be difficult to peel off.
And it is after 80s to peel off protective tapes, also can optionally handle with the solution of hydrofluoric acid containing, to suppress the dust from the concavo-convex place generation at the back side.
And, also can enumerate a kind of manufacture method of adhesive substrates, only the back side of insulating properties substrate 20 is imposed blasting treatment and comparatively easy.By at first to support chip, the back side of insulating properties substrate 20 just, impose such blasting treatment, and can obtain a kind of adhesive substrates, carry easily by asperitiesization and after mounting, take out, more and with transparent insulating substrate this adhesive substrates as support chip, then more the operation with semiconductor silicon wafer is easy equally in the identification on its surface.
Embodiment
Below, at the manufacture method of adhesive substrates of the present invention, be described more specifically by embodiment and comparative example.
Embodiment 1
Make a kind of adhesive substrates, it implements the manufacture method of adhesive substrates of the present invention, and with back side roughening.
The silicon substrate of preparing diameter 150mm is as donor wafer, and its surface forms the silicon oxide layer of 100nm by thermal oxidation.Inject hydrogen ion in this substrate by silicon oxide layer, form ion implanted layer.Ion implanting conditions is that 35keV, implantation dosage are 9 * 10 for injecting energy
16/ cm
2, the injection degree of depth is 0.3nm.
And the quartz base plate of preparing diameter 150mm is as support chip.
Then, use plasma processing apparatus, import nitrogen,, impose surface activation process the ion injection face of the silicon substrate prepared, the surface of quartz base plate as plasma gas.
So, made a kind of adhesive substrates, be that these substrates are fitted with room temperature, and after carrying out 30 minutes heat treatment with 300 ℃, use is drawn back and is used member, the part of silicon substrate is peeled off as the border with ion implanted layer, and formed silicon thin film on the surface of quartz base plate.With these as sample wafer.
In the surface of the silicon thin film side of this sample wafer, the coating photoresist is all to cover silicon thin film, makes it dry and carries out soft roasting.
Then, on the photoresistance film, attach dicing tape with as protective tapes, and the back side of sample wafer is imposed blasting treatment.Blasting treatment is to use the particle of aluminium oxide.
After the blasting treatment, dicing tape is peeled off from the photoresistance film, cleaned by ultrasonic waves water.Then, by sample wafer be impregnated in hydrofluoric acid solution with the state that is attached with the photoresistance film, and etch processes is carried out at the back side (back side of quartz base plate) that will impose the sample wafer after the blasting treatment.
Afterwards, the photoresistance film is removed by acetone, produced the adhesive substrates of back side roughening.
So by the adhesive substrates of manufacture method manufacturing of the present invention, optical sensor can be utilized and sensing is learnt its back side.And then, when estimating the state at surface, the back side, can obtain a kind of high-quality adhesive substrates as can be known, it imposes the rear side after the blasting treatment, can not observe particulate, and also can not see peeling off of silicon thin film etc. in face side.
Embodiment 2
Prepare sample wafer similarly to Example 1.
In the surface of the silicon thin film side of this sample wafer, directly attach dicing tape with as protective tapes, and impose blasting treatment similarly to Example 1 in the back side of sample wafer.
After the blasting treatment, dicing tape is peeled off from silicon thin film, cleaned by ultrasonic waves water.So by sample wafer be impregnated in hydrofluoric acid solution, and etch processes is carried out at the back side (back side of quartz base plate) that will impose the sample wafer after the blasting treatment, produces the adhesive substrates of back side roughening.
So, at adhesive substrates by manufacture method manufacturing of the present invention, when estimating the state at surface, the back side, though confirm that in face side some is from peeling off of the silicon thin film of quartz base plate and peeling off of the surface of silicon thin film, but still can obtain a kind of adhesive substrates, it is carried easily by asperitiesization and takes out after mounting, and then with transparent insulating substrate this adhesive substrates as support chip, then more the operation with semiconductor silicon wafer is easy equally in the identification on its surface.
In addition, the present invention is not limited to above-mentioned execution mode.Above-mentioned execution mode is an illustration, so long as have be described in claim of the present invention in the identical in fact formation of technological thought, can obtain the technical scheme of same action effect, no matter person why all is comprised in the technical scope of the present invention.
For example, in above-mentioned example,, equally also can use other transparent substrate of peeling off as the insulating properties substrate though use quartz base plate as the insulating properties substrate.
Claims (22)
1. the manufacture method of an adhesive substrates is that the insulating properties substrate is used as support chip, and on the surface of this insulating properties substrate, the method of the manufacturing adhesive substrates of applying donor wafer, it is characterized in that it to the back side of above-mentioned insulating properties substrate, imposes blasting treatment at least.
2. the manufacture method of an adhesive substrates, be as support chip with the insulating properties substrate, and on the surface of this insulating properties substrate, the method of the manufacturing adhesive substrates of applying donor wafer, it is characterized in that, it is being prepared after being formed with the adhesive substrates of silicon thin film on the surface of above-mentioned insulating properties substrate at least, and the back side to this adhesive substrates imposes blasting treatment.
3. the manufacture method of an adhesive substrates; be on the surface of insulating properties substrate, to form silicon thin film; and make the method for manufacturing adhesive substrates of the back side roughening of above-mentioned insulating properties substrate; it is characterized in that; it is ready to be formed with the adhesive substrates of silicon thin film at least earlier on the surface of above-mentioned insulating properties substrate; on the silicon thin film at least of this adhesive substrates, stick protective tapes, to the back side of above-mentioned insulating properties substrate, impose blasting treatment then.
4. the manufacture method of adhesive substrates as claimed in claim 3, wherein, the back side of above-mentioned insulating properties substrate imposed blasting treatment after, above-mentioned protective tapes is peeled off, and, is handled above-mentioned adhesive substrates with the solution of hydrofluoric acid containing.
5. the manufacture method of an adhesive substrates, be on the surface of insulating properties substrate, to form silicon thin film, and make the method for manufacturing adhesive substrates of the back side roughening of above-mentioned insulating properties substrate, it is characterized in that, it is ready to be formed with the adhesive substrates of silicon thin film at least earlier on the surface of above-mentioned insulating properties substrate, on the silicon thin film at least of this adhesive substrates, form organic membrane, after then the back side of above-mentioned insulating properties substrate being imposed blasting treatment, with the above-mentioned adhesive substrates of the solution-treated of hydrofluoric acid containing, remove above-mentioned organic membrane again.
6. the manufacture method of an adhesive substrates; be on the surface of insulating properties substrate, to form silicon thin film; and make the method for manufacturing adhesive substrates of the back side roughening of above-mentioned insulating properties substrate; it is characterized in that; it is ready to be formed with the adhesive substrates of silicon thin film at least earlier on the surface of above-mentioned insulating properties substrate; on the silicon thin film at least of this adhesive substrates, form organic membrane; and on this organic membrane, stick protective tapes; after then the back side of above-mentioned insulating properties substrate being imposed blasting treatment; above-mentioned protective tapes is peeled off; and, remove above-mentioned organic membrane again with the above-mentioned adhesive substrates of the solution-treated of hydrofluoric acid containing.
7. the manufacture method of adhesive substrates as claimed in claim 3 wherein, is made as dicing tape with above-mentioned protective tapes.
8. the manufacture method of adhesive substrates as claimed in claim 4 wherein, is made as dicing tape with above-mentioned protective tapes.
9. the manufacture method of adhesive substrates as claimed in claim 6 wherein, is made as dicing tape with above-mentioned protective tapes.
10. as the manufacture method of each described adhesive substrates in the claim 1～9, wherein, above-mentioned insulating properties substrate is any in quartz base plate, glass substrate, sapphire substrate or the aluminum oxide substrate.
11. as the manufacture method of claim 5 or 6 described adhesive substrates, wherein above-mentioned organic membrane forms by coating.
12. the manufacture method of adhesive substrates as claimed in claim 10, wherein, above-mentioned organic membrane forms by coating.
13., wherein, above-mentioned organic membrane is made as the photoresistance film as the manufacture method of claim 5 or 6 described adhesive substrates.
14. the manufacture method of adhesive substrates as claimed in claim 12 wherein, is made as the photoresistance film with above-mentioned organic membrane.
15. manufacture method as claim 5 or 6 described adhesive substrates, wherein, removing of above-mentioned organic membrane, handled by in Ozone Water, sulfuric acid, hot sulfuric acid, sulfuric acid-hydrogen peroxide mixed liquor, alcohols, the acetone any to carry out, or undertaken by oxygen plasma treatment or UV treatment.
16. the manufacture method of adhesive substrates as claimed in claim 14, wherein, removing of above-mentioned organic membrane, handled by in Ozone Water, sulfuric acid, hot sulfuric acid, sulfuric acid-hydrogen peroxide mixed liquor, alcohols, the acetone any to carry out, or undertaken by oxygen plasma treatment or UV treatment.
17. as the manufacture method of each described adhesive substrates in the claim 2,3,6, wherein, the preparation of above-mentioned adhesive substrates comprises the steps: at least
To silicon substrate or be formed with the silicon substrate of oxide-film on its surface, inject from the surface hydrogen ion or noble gas ion or this two and form ion implanted layer;
With above-mentioned silicon substrate or be formed with on its surface oxide-film silicon substrate the ion injection face with want and the surface of the above-mentioned insulating properties substrate that this ion injection face is fitted is connected airtight and fitted;
With above-mentioned ion implanted layer is the border, with above-mentioned silicon substrate or be formed with the silicon substrate of oxide-film on its surface, mechanically peels off and filming, and form silicon thin film on the surface of above-mentioned insulating properties substrate.
18. the manufacture method of adhesive substrates as claimed in claim 16, wherein, the preparation of above-mentioned adhesive substrates comprises the steps: at least
To silicon substrate or be formed with the silicon substrate of oxide-film on its surface, inject from the surface hydrogen ion or noble gas ion or this two and form ion implanted layer;
With above-mentioned silicon substrate or be formed with on its surface oxide-film silicon substrate the ion injection face with want and the surface of the above-mentioned insulating properties substrate that this ion injection face is fitted is connected airtight and fitted;
With above-mentioned ion implanted layer is the border, with above-mentioned silicon substrate or be formed with the silicon substrate of oxide-film on its surface, mechanically peels off and filming, and form silicon thin film on the surface of above-mentioned insulating properties substrate.
19. as the manufacture method of each described adhesive substrates in the claim 2,3,6, wherein, the preparation of above-mentioned adhesive substrates comprises the steps: at least
To silicon substrate or be formed with the silicon substrate of oxide-film on its surface, inject from the surface hydrogen ion or noble gas ion or this two and form ion implanted layer;
To above-mentioned silicon substrate or be formed with on its surface oxide-film silicon substrate the ion injection face and want and one of them of the surface of the above-mentioned insulating properties substrate that this ion injection face is fitted surperficial, impose surface activation process;
With above-mentioned silicon substrate or be formed with the ion injection face of silicon substrate of oxide-film on its surface and the surface of above-mentioned insulating properties substrate is connected airtight and fitted;
With above-mentioned ion implanted layer is the border, with above-mentioned silicon substrate or be formed with the silicon substrate of oxide-film on its surface, mechanically peels off and filming, and form silicon thin film on the surface of above-mentioned insulating properties substrate.
20. the manufacture method of adhesive substrates as claimed in claim 16, wherein, the preparation of above-mentioned adhesive substrates comprises the steps: at least
To silicon substrate or be formed with the silicon substrate of oxide-film on its surface, inject from the surface hydrogen ion or noble gas ion or this two and form ion implanted layer;
To above-mentioned silicon substrate or be formed with on its surface oxide-film silicon substrate the ion injection face and want and one of them face on the surface of the above-mentioned insulating properties substrate that this ion injection face is fitted, impose surface activation process;
With above-mentioned silicon substrate or be formed with the ion injection face of silicon substrate of oxide-film on its surface and the surface of above-mentioned insulating properties substrate is connected airtight and fitted;
With above-mentioned ion implanted layer is the border, with above-mentioned silicon substrate or be formed with the silicon substrate of oxide-film on its surface, mechanically peels off and filming, and form silicon thin film on the surface of above-mentioned insulating properties substrate.
21., wherein, before above-mentioned blasting treatment and/or after handling, the surface of above-mentioned silicon thin film is given mirror finish as the manufacture method of each described adhesive substrates in the claim 2,3,6.
22. the manufacture method of adhesive substrates as claimed in claim 20 wherein, before above-mentioned blasting treatment and/or after handling, gives mirror finish with the surface of above-mentioned silicon thin film.
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| JP2007-109321 | 2007-04-18 | ||
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| JP2008050880A JP5274859B2 (en) | 2007-04-18 | 2008-02-29 | Manufacturing method of bonded substrate |
| JP2008-050880 | 2008-02-29 |
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| CN101290872B (en) | 2013-07-17 |
| JP5274859B2 (en) | 2013-08-28 |
| JP2008288556A (en) | 2008-11-27 |
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