CN104946147A - Chip bonding film, cutting-chip bonding film, and laminating film - Google Patents
Chip bonding film, cutting-chip bonding film, and laminating film Download PDFInfo
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- CN104946147A CN104946147A CN201510142546.5A CN201510142546A CN104946147A CN 104946147 A CN104946147 A CN 104946147A CN 201510142546 A CN201510142546 A CN 201510142546A CN 104946147 A CN104946147 A CN 104946147A
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- Prior art keywords
- chip join
- join film
- film
- chip
- cutting
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
Abstract
Provided are a chip bonding film, a cutting-chip bonding film, and a laminating film. The invention provide a chip bonding film which can observe gaps in a non-destructive manner under the condition that a semiconductor device is not sacrificed. The haze of the chip bonding film is 0-25%.
Description
Technical field
The present invention relates to chip join film, cutting-chip join film and stacked film.
Background technology
The known method (such as with reference to patent documentation 1) using chip join film when semi-conductor chip being adhered to the adherends such as die-attach area.
In such method, sometimes after chip join, in chip join film, space is produced.Space makes the reliability of the semiconductor device evaluated by resistance to moisture absorption Reflow Soldering, resistance to HAST (High Accelerated Stress Test, high accelerated stress testing) etc. reduce, and causes the bad of semiconductor device.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 6-145639 publication
Summary of the invention
The problem that invention will solve
Existing chip join film contains the filler of about 500nm, therefore opaque.Therefore, in order to observe the space in chip join film, general use ultrasonic wave mapping device (SAT).But, when utilizing ultrasonic wave mapping device to observe, need semiconductor device to be immersed in the water, therefore in order to test, need to sacrifice semiconductor device.
The object of the invention is to solve described problem, chip join film, cutting-chip join film and the stacked film that can observe space when not sacrificing semiconductor device are provided.
Solve the method for problem
The present invention relates to the chip join film that mist degree is 0% ~ 25%.The transparency of chip join film of the present invention is high, therefore, it is possible to observe space when not using ultrasonic wave mapping device.Therefore, it is possible to observe when not sacrificing semiconductor device, the yield rate of semiconductor device can be improved.In addition, the bad of semiconductor device can be reduced.
Chip join film optimal wavelength of the present invention is that the transmissivity of the light of 600nm is more than 85%.If more than 85%, then can visual observation space.
Chip join film optimal wavelength of the present invention is that the transmissivity of the light of 400nm is more than 85%.If more than 85%, then can use space proofing unit, the optical microphotograph lens device etc. that links with image recognition program particularly observes space.
Chip join film optimal wavelength of the present invention is that the transmissivity of light under all zones of 400nm ~ 600nm is more than 85%.If more than 85%, then can visual, proofing unit observation space, use space.
The invention still further relates to a kind of cutting-chip join film, it possesses: have base material and be configured in the chip join film that the dicing tape of the binder layer on base material and the mist degree configured over the binder layer are 0% ~ 25%.
Chip join film is preferably that the transmissivity of the light of 600nm is low by more than 5% than the wavelength under the state of not elongating to elongate the wavelength under the state of 200% be the transmissivity of the light of 600nm.By elongating chip join film, can easily observe chip join film, therefore easily can confirm the presence or absence of chip join film.
But, when the transparency of chip join film is high, be difficult to the position knowing chip join film, be therefore difficult to carry out contraposition when chip join film and dicing tape are fitted.In addition, when carrying out quality and checking, the exception of chip join film shape cannot sometimes be detected.
Therefore, chip join film preferably possesses the paste section for pasting semiconductor wafer and is configured in the non-paste section of periphery of paste section, and non-paste section is provided with mark.Mark preferably can identify optically.If be provided with mark in non-paste section, then when chip join film and dicing tape being fitted, easily can carry out contraposition.In addition, the presence or absence of chip join film can easily be judged.In addition, when carrying out quality and checking, the exception of chip join film shape can sometimes be detected.
Base material is preferably the transmissivity of light under all zones of 400nm ~ 600nm at wavelength is 0% ~ 20%.Thus, will cut-chip join film and semiconductor wafer be when fitting, and can with edge of base material etc. for benchmark carries out contraposition.
Base material defines two sides by the 1st interarea contacted with binder layer and the 2nd interarea relative with the 1st interarea.Preferably the surface roughness Ra of the 2nd interarea is 0.5 μm ~ 5 μm.Thereby, it is possible to make the transmittance of base material reduce.
The invention still further relates to a kind of stacked film, it possesses partition and is configured in the cutting-chip join film on partition.
Partition preferably possesses the peripheral part of the laminated section contacted with chip join film and the periphery being configured in laminated section.Preferably peripheral part is provided with mark.In addition, preferably the edge of laminated section is provided with mark.If be provided with indentation at the edge of peripheral part and/or laminated section, then when chip join film and dicing tape being fitted, easily can carry out contraposition.
Preferably be labeled as indentation.From the reason easily can carrying out position understanding, the degree of depth of preferred indentation is 5 μm ~ 45 μm.
Invention effect
According to the present invention, provide chip join film, cutting-chip join film and the stacked film that can observe to non-demolition space when not sacrificing semiconductor device.
Accompanying drawing explanation
Fig. 1 is the summary section of chip join film.
Fig. 2 is the summary section of cutting-chip join film.
Fig. 3 is the general view of stacked film.
Fig. 4 is by the summary section of stacked film local enlargement display.
Fig. 5 is the sectional view of the outline that the appearance being configured with semiconductor wafer on cutting-chip join film is shown.
Fig. 6 is the sectional view of the outline that the appearance after by semiconductor wafer singualtion is shown.
Fig. 7 is the summary section of the adherend with semi-conductor chip.
Fig. 8 is the summary section of semiconductor device.
The summary section of the chip join film of Fig. 9 involved by variation 1.
The summary section of the stacked film of Figure 10 involved by variation 2.
The summary section of the stacked film of Figure 11 involved by variation 3.
The summary section of the stacked film of Figure 12 involved by variation 4.
Nomenclature
1 dicing tape
2 stacked films
3 chip join films
4 semiconductor wafers
5 semi-conductor chips
6 adherends
61 with the adherend of semi-conductor chip
7 bonding wires
8 sealing resins
9 partitions
10 cutting-chip join films
11 base materials
11a the 1st interarea
11b the 2nd interarea
12 binder layers
31 paste sections
32 non-paste sections
91 laminated sections
92 peripheral parts
93 peripheries
301 marks
901 indentations
Embodiment
Below illustrate that embodiment explains the present invention, but the present invention is not limited to these embodiments.
[embodiment 1]
(chip join film 3)
As shown in Figure 1, the form of chip join film 3 is membranaceous.The transparency of chip join film 3 is high, therefore, it is possible to observe space when not using ultrasonic wave mapping device.Therefore, it is possible to observe when not sacrificing semiconductor device, the yield rate of semiconductor device can be improved.In addition, the bad of semiconductor device can be reduced.
The mist degree of chip join film 3 is less than 25%, preferably less than 20%, further preferably less than 15%, particularly preferably less than 10%.Owing to being less than 25%, therefore transparent high, space can be observed when not using ultrasonic wave mapping device.The lower limit of the mist degree of chip join film 3 is not particularly limited, such as, be more than 0%.The lower limit of the mist degree of chip join film 3 can be such as more than 0.5%.
It should be noted that, mist degree can be measured by the method recorded in embodiment.
Mist degree can be controlled by inorganic filling material.Such as, by mismatching inorganic filling material, using the inorganic filling material that median size is little, mist degree can be reduced.
In chip join film 3, optimal wavelength be the transmissivity of the light of 600nm more than 85%, more preferably more than 90%.If more than 85%, then can visual observation space.It should be noted that, in observation, can opticmicroscope etc. be used.
Wavelength is that the transmissivity of the light of 600nm can be controlled by the particle diameter of filler.Such as, by reducing the particle diameter of filler, the transmissivity more than 85% can be obtained.
In chip join film 3, optimal wavelength is that the transmissivity of the light of 400nm is more than 85%.If more than 85%, then can observe space with space proofing unit, particularly opticmicroscope etc.
Wavelength is that the transmissivity of the light of 400nm can be controlled by the particle diameter of filler.Such as, by reducing the particle diameter of filler, the transmissivity more than 85% can be obtained.
In chip join film 3, optimal wavelength is that the transmissivity of light under all zones of 400nm ~ 600nm is more than 85%.If more than 85%, then can visual, proofing unit observation space, use space.
The transmissivity of light can be measured by the method recorded in embodiment.
In chip join film 3, be preferably that the transmissivity of the light of 600nm is low by more than 5% than the wavelength under the state of not elongating to elongate the wavelength under the state of 200% be the transmissivity of the light of 600nm.By elongating chip join film 3, can easily observe chip join film 3, therefore easily can confirm the presence or absence of chip join film 3.In cutting-chip join film, by elongating cutting-chip join film, easily can confirm the presence or absence of chip join film 3.It should be noted that, why transmissivity reduces, and supposition is due to by elongating, and the polymkeric substance contained in chip join film 3 produces the cause of orientation.
In chip join film 3, to elongate the wavelength under the state of 200% be the light of 600nm, transmissivity is preferably less than 70%, and more preferably less than 60%.If less than 70%, then easily can confirm the presence or absence of chip join film 3.Being not particularly limited to the lower limit that the wavelength under the state of 200% is the transmissivity of the light of 600nm in elongation, such as, is 5%.
In chip join film 3, to elongate the wavelength under the state of 5% be the light of 600nm, transmissivity is preferably more than 75%, and more preferably more than 80%.If more than 80%, then also can keep the transparency after expansion.
Chip join film 3 preferably has thermoset.
Chip join film 3 is preferably containing thermoplastic resin.As thermoplastic resin, can enumerate: the saturated polyester resin such as polyamide resin, phenoxy resin, acrylic resin, PET, PBT, polyamide-imide resin or the fluoro-resin etc. such as natural rubber, isoprene-isobutylene rubber, synthetic polyisoprene, chloroprene rubber, vinyl-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutadiene, polycarbonate resin, thermoplastic polyimide resin, 6-nylon, 6,6-nylon.In these thermoplastic resins, particularly preferably ionic impurity is few, thermotolerance is high, can guarantee the acrylic resin of the reliability of semiconductor element.
As acrylic resin, be not particularly limited, the polymkeric substance (acrylic copolymer) etc. that can to enumerate with the one kind or two or more ester with the acrylic or methacrylic acid of the straight or branched alkyl of carbonatoms less than 30, particularly carbonatoms 4 ~ 18 be composition.As described alkyl, can enumerate such as: methyl, ethyl, propyl group, sec.-propyl, normal-butyl, the tertiary butyl, isobutyl-, amyl group, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl group, iso-octyl, nonyl, different nonyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, octadecyl or dodecyl etc.
In addition, as other monomers forming polymkeric substance (acrylic copolymer), be not particularly limited, can enumerate such as: the carboxyl group-containing monomers such as vinylformic acid, methacrylic acid, carboxy ethyl acrylate, carboxypentyl acrylate, methylene-succinic acid, toxilic acid, fumaric acid or β-crotonic acid; The anhydride monomers such as maleic anhydride or itaconic anhydride; The hydroxyl monomers such as (methyl) vinylformic acid 2-hydroxy methacrylate, (methyl) vinylformic acid 2-hydroxy propyl ester, (methyl) vinylformic acid 4-hydroxybutyl, the own ester of (methyl) vinylformic acid 6-hydroxyl, (methyl) vinylformic acid 8-hydroxyl monooctyl ester, (methyl) vinylformic acid 10-hydroxyl ester in the last of the ten Heavenly stems, (methyl) vinylformic acid 12-hydroxylauric ester or vinylformic acid (4-Hydroxymethyl-cyclo-hexyl) methyl esters; Styrene sulfonic acid, allyl sulfonic acid, 2-(methyl) acrylamide-2-methylpro panesulfonic acid, (methyl) acryamidopropanesulfonic acid, (methyl) vinylformic acid sulphur propyl ester or (methyl) propane sulfonic acid etc. are containing sulfonic group monomer; Or the phosphorous acid-based monomers such as acryloyl phosphoric acid-2-hydroxy methacrylate.
In acrylic resin, preferable weight-average molecular weight is the acrylic resin of more than 100,000, more preferably the acrylic resin of 300,000 ~ 3,000,000, further preferably 500,000 ~ 2,000,000 acrylic resin.This is because, if in above-mentioned numerical range, then cementability and excellent heat resistance.It should be noted that, weight-average molecular weight is for being undertaken measuring and the value calculated by polystyrene conversion by GPC (osmogels chromatogram).
The content of the thermoplastic resin in chip join film 3 is preferably more than 5 % by weight, and more preferably more than 10 % by weight, further preferably more than 30 % by weight.The content of thermoplastic resin is preferably less than 90 % by weight, and more preferably less than 80 % by weight, further preferably less than 70 % by weight.
Chip join film 3 is preferably containing thermosetting resin.Thereby, it is possible to raising thermostability.
As thermosetting resin, can enumerate: resol, aminoresin, unsaturated polyester resin, epoxy resin, urethane resin, silicone resin or thermoset polyimide resin etc.The particularly preferably poor epoxy resin of the ionic impurity etc. of corrosion resistant semiconductor element.In addition, as the solidifying agent of epoxy resin, preferred resol.
As epoxy resin, be not particularly limited, can use such as: the epoxy resin of the bifunctional epoxy resin such as bisphenol A-type, bisphenol-f type, bisphenol S type, bmminated bisphenol-A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorenes type, phenol novolac type, ortho-cresol novolac type, three hydroxyphenyl methane types, four (hydroxyphenyl) ethane type or polyfunctional epoxy resin or glycolylurea type, triglycidyl isocyanurate type or glycidic amine type etc.In these epoxy resin, particularly preferably novolac type epoxy resin, biphenyl type epoxy resin, three hydroxyphenyl methane type epoxy resin or four (hydroxyphenyl) ethane type epoxy resin.This is because: these epoxy resin are good with the reactivity as the resol of solidifying agent, and thermotolerance etc. are excellent.
Resol plays a role as the solidifying agent of epoxy resin, can enumerate such as: the polycarboxylated styrenes etc. such as the novolac type resol such as phenol linear phenolic resin, phenol aralkyl resin, cresol novalac resin, tert.-butyl phenol linear phenolic resin, nonylphenol linear phenolic resin, first rank novolac type phenolic resin, poly(4-hydroxystyrene).Particularly preferably phenol linear phenolic resin, phenol aralkyl resin in these resol.This is because the connection reliability of semiconductor device can be improved.
About the mixing ratio of epoxy resin and resol, it is preferred for such as carrying out cooperation in the mode reaching 0.5 ~ 2.0 equivalent relative to epoxy group(ing) 1 equivalent in epoxy resin ingredient, the hydroxyl in resol.Be more preferably 0.8 ~ 1.2 equivalent.That is, this is because: if both mixing ratios are beyond described scope, then curing reaction carries out insufficient, and the characteristic of cured article is easily deteriorated.
The content of the thermosetting resin in chip join film 3 is preferably more than 5 % by weight, and more preferably more than 10 % by weight, further preferably more than 30 % by weight.The content of thermosetting resin is preferably less than 90 % by weight, and more preferably less than 80 % by weight, further preferably less than 70 % by weight.
Chip join film 3 can contain inorganic filling material.In order to improve the transparency, preferably use the inorganic filling material that median size is little.
The median size of inorganic filling material is preferably below 150nm, more preferably below 100nm, further preferred below 80nm, particularly preferably below 50nm.If below 150nm, then can improve the transparency of chip join film 3.On the other hand, the median size of inorganic filling material is preferably more than 10nm, more preferably more than 25nm.If more than 10nm, then can prevent the reduction of the transmissivity caused by cohesion of filler.
It should be noted that, by using the sample extracted out arbitrarily from female group, utilizing laser diffraction and scattering formula particle size distribution device to measure, can median size be derived thus.
As inorganic filling material, can enumerate such as, silica glass, talcum, silicon-dioxide (fused silica, crystalline silica etc.), aluminum oxide, aluminium nitride, silicon nitride, boron nitride etc.As inorganic filling material, can preferably use the material with electroconductibility.As the inorganic filling material with electroconductibility, can enumerate such as, solder, nickel, copper, silver, gold etc.Wherein, for the reason that can reduce linear expansivity well, preferred silicon-dioxide, aluminum oxide, more preferably silicon-dioxide.
As silicon-dioxide, preferred SiO 2 powder, more preferably fused silica powder.As fused silica powder, can enumerate: spheroidal fused SiO 2 powder, broken fused silica powder, but from the view point of mobility, preferred spherical fused silica powder.
The content of the inorganic filling material in chip join film 3 is preferably more than 10 % by weight, and more preferably more than 30 % by weight.On the other hand, the content of inorganic filling material is preferably less than 90 % by weight, and more preferably less than 80 % by weight, further preferably less than 70 % by weight.
In chip join film 3, except described composition, the general Synergist S-421 95 used in can also suitably manufacturing containing film, such as linking agent etc.
Chip join film 3 can utilize usual method manufacture.Such as, make the adhesive compound solution containing described each composition, to reach the mode coating binder composition solution of specific thickness on base material partition, after forming coated film, make this coated film dry, chip join film 3 can be produced thus.
As the solvent used in adhesive compound solution, be not particularly limited, preferably can by described each uniform composition dissolve, mixing or dispersion organic solvent.Can enumerate such as, dimethyl formamide, N,N-DIMETHYLACETAMIDE, N-Methyl pyrrolidone, acetone, methylethylketone, the ketone series solvents such as pimelinketone, toluene, dimethylbenzene etc.Coating process is not particularly limited.As the method for solvent coating, can enumerate such as, slit type coater, gravure coater, roller coating machine, reversion coating machine, comma coater, pipe blade type coating machine (パ イ プ De ク タ ー コ ー タ ー), silk screen printing etc.Wherein, high from the view point of the homogeneity of coating thickness, preferred slit type coater.
As base material partition, plastic film or paper etc. after polyethylene terephthalate (PET), polyethylene, polypropylene can being used or utilizing the stripper such as fluorine series stripping agent, chain alkyl acrylate series stripping agent to carry out surface coated.As the coating process of adhesive compound solution, can enumerate such as: roller coat applies, silk screen coating, gravure coating etc.In addition, the drying conditions of coated film is not particularly limited, such as, can carry out under drying temperature 70 ~ 160 DEG C, the condition of 1 ~ 5 minute time of drying.。
As the manufacture method of chip join film 3, such as, be also applicable to adopting following method etc.: above-mentioned each composition mixing machine is mixed, obtained mixture press forming is manufactured chip join film 3.As mixing machine, planetary-type mixer etc. can be enumerated.
The thickness of chip join film 3 is not particularly limited, and is preferably more than 5 μm, is more preferably more than 15 μm.If be less than 5 μm, then sometimes produce not bonding with the semiconductor wafer or semi-conductor chip that occur warpage position, thus bond area becomes unstable.In addition, the thickness of chip join film 3 is preferably less than 100 μm, is more preferably less than 50 μm.If more than 100 μm, then chip join film 3 is excessively extruded due to the load of chip attachment sometimes, thus pollutes pad.
Chip join film 3 may be used for the manufacture of semiconductor device.Particularly, may be used for adherend bonding with semi-conductor chip.As adherend, can enumerate: lead frame, media layer (イ ン タ ー ポ ー ザ), semi-conductor chip etc.
Chip join film 3 preferably uses with the form of cutting-chip join film.If use with this form, then can operate the semiconductor wafer of the state being pasted on cutting-chip join film, therefore can reduce the chance separately semiconductor wafer operated.
(cutting-chip join film 10)
As shown in Figure 2, cutting-chip join film 10 possesses: dicing tape 1 and the chip join film 3 be configured on dicing tape 1.
Dicing tape 1 possesses: base material 11 and the binder layer 12 be configured on base material 11.Chip join film 3 is configured on binder layer 12.
In base material 11, optimal wavelength is that the transmissivity of light under all zones of 400nm ~ 600nm is low.This is in order to when cutting-chip join film 10 being fitted with semiconductor wafer 4, can with the edge of base material 11 etc. for benchmark carries out contraposition.Wavelength is that the transmissivity of light under all zones of 400nm ~ 600nm is preferably 0% ~ 20%, more preferably 0% ~ 10%.If less than 20%, then can with edge of base material 11 etc. for benchmark carries out contraposition.
Base material 11 defines two sides by the 1st interarea 11a contacted with binder layer 12 and the 2nd interarea 11b relative with the 1st interarea 11a.The surface roughness Ra of the 2nd interarea 11b is preferably more than 0.5 μm, more preferably more than 1 μm.If more than 0.5 μm, then make scattering of light and realize opacification, therefore, it is possible to utilize sensor to carry out position understanding.On the other hand, the upper limit of the surface roughness Ra of the 2nd interarea 11b is not particularly limited.The upper limit of the surface roughness Ra of the 2nd interarea 11b is such as 5 μm.
As base material 11, can enumerate such as: the polyolefine such as Low Density Polyethylene, straight-chain polyethylene, medium-density polyethylene, high density polyethylene(HDPE), ultra-low density polyethylene, atactic copolymerized polypropene, block copolymerization polypropylene, homo-polypropylene, polybutene, polymethylpentene, vinyl-vinyl acetate copolymer, ionomer resin, ethene-(methyl) acrylic copolymer, ethene-(methyl) acrylate is (random, alternately) multipolymer, ethylene-butene copolymer, ethylene-hexene co-polymers, urethane, polyethylene terephthalate, the polyester such as PEN, polycarbonate, polyimide, polyether-ether-ketone, polyimide, polyetherimide, polymeric amide, fully aromatic polyamide, polyphenylene thioether, aromatic poly amide (paper), glass, woven fiber glass, fluoro-resin, polyvinyl chloride, polyvinylidene dichloride, cellulose-based resin, silicone resin, metal (paper tinsel), paper etc.
In base material 11, be familiar with to make position and become easy, can dyestuff, pigment be contained.
Base material 11 also preferably has UV transmissive.
In order to improve and the adaptation of adjoining course, retentivity etc., usual surface treatment can be implemented in the surface of base material 11, the chemistry such as such as chromic acid process, ozone exposure, fire exposure, high-voltage electric shock exposure, the process of ionizing irradiation line or physical treatment, utilize the coating process of silane coupling agent (such as, adhesive substance described later).
The thickness of base material 11 can suitably be determined without particular limitation, but is generally 5 μm ~ about 200 μm.
The tackiness agent used in formation as binder layer 12, is not particularly limited, and such as, can use the pressure-sensitive adhesive that acrylic adhesive, elastomeric adhesive etc. are general.As pressure-sensitive adhesive, the electronic unit polluted from the viewpoint of the taboo such as semiconductor wafer or glass, the clean detergency etc. that utilizes the organic solvent such as ultrapure water or alcohol, the preferably acrylic adhesive of polymkeric substance based on acrylic acid polymer.
As acrylic acid polymer, can enumerate and such as use (methyl) alkyl acrylate (such as, methyl esters, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, secondary butyl ester, the tert-butyl ester, pentyl ester, isopentyl ester, own ester, heptyl ester, monooctyl ester, 2-ethylhexyl, different monooctyl ester, the ninth of the ten Heavenly Stems ester, the last of the ten Heavenly stems ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, cetyl ester, stearyl, the carbonatoms 1 ~ 30 of the alkyl such as eicosyl ester, the particularly straight-chain of carbonatoms 4 ~ 18 or the alkyl ester etc. of branched) and (methyl) acrylate base ester is (such as, ring pentyl ester, cyclohexyl etc.) in one or more acrylic acid polymer etc. as monomer component.It should be noted that, (methyl) acrylate refers to acrylate and/or methacrylic ester, and " (methyl) " of the present invention all has same implication.
In order to improve cohesive force, thermotolerance etc., acrylic acid polymer can as required and containing can with the unit corresponding to other monomer components of above-mentioned (methyl) alkyl acrylate or cycloalkyl ester copolymerization.As such monomer component, can enumerate such as: the carboxyl group-containing monomer such as vinylformic acid, methacrylic acid, (methyl) carboxy ethyl acrylate, (methyl) carboxypentyl acrylate, methylene-succinic acid, toxilic acid, fumaric acid, β-crotonic acid; The anhydride monomers such as maleic anhydride, itaconic anhydride; The hydroxyl monomers such as (methyl) 2-Hydroxy ethyl acrylate, (methyl) 2-hydroxypropyl acrylate, (methyl) vinylformic acid-4-hydroxybutyl, the own ester of (methyl) vinylformic acid-6-hydroxyl, (methyl) vinylformic acid-8-hydroxyl monooctyl ester, (methyl) vinylformic acid-10-hydroxyl ester in the last of the ten Heavenly stems, (methyl) vinylformic acid-12-hydroxylauric ester, (methyl) vinylformic acid-(4-hydroxymethylcyclohexyl) methyl esters; Styrene sulfonic acid, allyl sulphonic acid, 2-(methyl) acrylamide-2-methylpro panesulfonic acid, (methyl) acryamidopropanesulfonic acid, (methyl) vinylformic acid sulphur propyl ester, (methyl) propane sulfonic acid etc. are containing sulfonic group monomer; The phosphorous acid-based monomers such as 2-hydroxyethyl acryloyl phosphate; Acrylamide; Vinyl cyanide etc.These copolymerisable monomer compositions can use one or more.The usage quantity of these copolymerisable monomers is preferably less than 40 % by weight of whole monomer component.
In addition, in order to be cross-linked, acrylic acid polymer also can as required containing multi-functional monomer etc. as comonomer composition.As so multi-functional monomer, can enumerate such as: hexylene glycol two (methyl) acrylate, (gathering) ethylene glycol bisthioglycolate (methyl) acrylate, (gathering) propylene glycol two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, tetramethylolmethane two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylolmethane three (methyl) acrylate, Dipentaerythritol six (methyl) acrylate, epoxy (methyl) acrylate, polyester (methyl) acrylate, carbamate (methyl) acrylate etc.These multi-functional monomers also can use a kind of or two or more.From viewpoints such as adhesion characteristics, the usage quantity of multi-functional monomer is preferably less than 30 % by weight of whole monomer component.
Acrylic acid polymer can by obtaining single monomer or two or more polymerize monomer mixtures.Polymerization can be undertaken by any-modes such as solution polymerization, letex polymerization, mass polymerization, suspension polymerizations.From the viewpoint of the adherend etc. of preventing pollution cleaning, the content of preferred low molecular weight substance is little.From this viewpoint, the number-average molecular weight of acrylic acid polymer is preferably more than 300,000, and more preferably 400,000 ~ about 3,000,000.
In addition, in order to the number-average molecular weight of the acrylic acid polymer etc. of polymkeric substance based on improving, in described tackiness agent, suitably external crosslinker can be used.As the concrete grammar of outside cross-linking method, can enumerate: add the method that the so-called linking agents such as polyisocyanate compound, epoxy compounds, aziridine cpd, melamine series linking agent carry out reacting.When using external crosslinker, its usage quantity according to the balance with the base polymer that should be cross-linked and suitably can be determined as the use of tackiness agent.Generally speaking, relative to described base polymer 100 weight part, preferably coordinate below about 5 weight parts, more preferably coordinate 0.1 ~ 5 weight part.In addition, as required, except described composition, the additives such as existing known various tackifier, antiaging agent can also be used in tackiness agent.
Binder layer 12 can utilize radiation curable tackiness agent to be formed.Radiation curable tackiness agent can make degree of crosslinking increase by irradiation ultraviolet radiation israds, thus is easy to its bounding force is declined.
Radiation curable tackiness agent can use without particular limitation to be had carbon-to-carbon double bond israds solidified nature functional group and demonstrates fusible tackiness agent.As radiation curable tackiness agent, can illustrate such as: the radiation curable tackiness agent being combined with the monomer component of radiation curing, the addition type of oligopolymer composition in the common pressure-sensitive adhesives such as described acrylic adhesive, elastomeric adhesive.
As the monomer component of radiation curing joined together, can enumerate such as: oligourethane, carbamate (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylol methane four (methyl) acrylate, tetramethylolmethane three (methyl) acrylate, tetramethylolmethane four (methyl) acrylate, Dipentaerythritol monohydroxy five (methyl) acrylate, Dipentaerythritol six (methyl) acrylate, BDO two (methyl) acrylate etc.In addition, the oligopolymer composition of radiation curing can enumerate the various oligopolymer such as carbamate system, polyethers system, Polyester, polycarbonate-based, polyhutadiene system, and its molecular weight is suitable in the scope of about 100 ~ 30000.The monomer component of radiation curing or the use level of oligopolymer composition, the amount suitably can determining to make the bounding force of binder layer to decline according to the kind of described binder layer.Generally speaking, relative to base polymer 100 weight part such as acrylic acid polymer forming tackiness agent, such as, be about 5 ~ 500 weight parts, preferably 40 ~ 150 weight parts.
In addition, as radiation curable tackiness agent, except the radiation curable tackiness agent of the described addition type illustrated, also can enumerate: be used in polymer lateral chain or main chain or the radiation curable tackiness agent of the inherent type of polymkeric substance based on polymkeric substance that main chain terminal has a carbon-to-carbon double bond.With regard to the radiation curable tackiness agent of inherent type, its oligopolymer composition etc. not needing containing or do not contain in a large number as low molecular composition, therefore oligopolymer composition etc. can not through time move in tackiness agent, thus the binder layer of stable Rotating fields can be formed, therefore preferably.
The described base polymer with carbon-to-carbon double bond can use without particular limitation to be had carbon-to-carbon double bond and has fusible base polymer.As such base polymer, preferably using acrylic acid polymer as the polymkeric substance of basic framework.As the basic framework of acrylic acid polymer, described illustrative acrylic acid polymer can be enumerated.
The method introducing carbon-to-carbon double bond in described acrylic acid polymer is not particularly limited, and can adopt various method, but on polymer lateral chain, introduces carbon-to-carbon double bond ratio in molecular designing be easier to.Such as can enumerate following method: after the monomer making to have functional group in advance and acrylic acid polymer copolymerization, make to have can with the compound of the functional group of this functional group reactions and carbon-to-carbon double bond, under the state of radiation curing keeping carbon-to-carbon double bond, carry out condensation or addition reaction.
As the combination example of these functional groups, can enumerate: carboxyl and epoxy group(ing), carboxyl and '-aziridino, hydroxyl and isocyanate group etc.In the combination of these functional groups, from the view point of easy following response, the combination of preferred hydroxyl and isocyanate group.In addition, as long as have the combination of the acrylic acid polymer of carbon-to-carbon double bond described in being generated by the combination of these functional groups, then functional group can any side in acrylic acid polymer and described compound, with regard to described preferably combination, the situation that preferred acrylic acid polymer has hydroxyl, described compound has isocyanate group.Now, as the isocyanate compound with carbon-to-carbon double bond, such as methacryloyl isocyanic ester, 2-methylacryoyloxyethyl isocyanic ester, a pseudoallyl-alpha, alpha-dimethylbenzyl isocyanic ester etc. can be enumerated.In addition, as acrylic acid polymer, the acrylic acid polymer copolymerization such as the ether based compound of described illustrative hydroxyl monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl base ether obtained can be used.
The radiation curable tackiness agent of described inherent type, there is described in can be used alone the base polymer (particularly acrylic acid polymer) of carbon-to-carbon double bond, also can coordinate monomer component, the oligopolymer composition of described radiation curing under the degree not damaging characteristic.The oligopolymer composition of radiation curing etc. usually relative to base polymer 100 weight part in the scope of 30 weight parts, the preferably scope of 0 ~ 10 weight part.
In described radiation curable tackiness agent, when by ultraviolet etc. when solidification containing Photoepolymerizationinitiater initiater.As Photoepolymerizationinitiater initiater, can enumerate such as: the α-one alcohol based compounds such as 4-(2-hydroxyl-oxethyl) phenyl (2-hydroxyl-2-propyl group) ketone, Alpha-hydroxy-α, α '-dimethyl acetophenone, 2-methyl-2-hydroxypropiophenonepreparation, 1-hydroxycyclohexylphenylketone; Methoxyacetophenone, 2,2 '-dimethoxy-2-phenyl acetophenone, 2, the methyl phenyl ketone based compounds such as 2 '-diethoxy acetophenone, 2-methyl isophthalic acid-[4-(methylthio group) phenyl]-2-morpholino propane-1-ketone; The benzoin ether based compounds such as ethoxybenzoin, benzoin iso-propylether, anisoin methyl ether; The ketal based compounds such as benzil dimethyl ketal; The aromatic sulfonyl based compounds such as 2-naphthalic sulfonic chloride; The photolytic activity oxime compounds such as 1-benzophenone-1,1-propanedione-2-(adjacent ethoxy carbonyl) oxime; Benzophenone, benzoyl phenylformic acid, 3, the benzophenone based compounds such as 3 '-dimethyl-4-methoxy benzophenone; The thioxanthone based compounds such as thioxanthone, CTX, 2-methyl thioxanthone, 2,4-dimethyl thioxanthone, isopropyl thioxanthone, 2,4-bis-clopenthixal ketones, 2,4-diethyl thioxanthones, 2,4-diisopropylthioxanthone; Camphorquinone; Halogenated ketone; Acylphosphine oxide; Acyl phosphonate etc.Relative to base polymer 100 weight part such as acrylic acid polymer forming tackiness agent, the use level of Photoepolymerizationinitiater initiater is such as about 0.05 weight part ~ 20 weight part.
In addition, as radiation curable tackiness agent, can enumerate such as elastomeric adhesive, acrylic adhesive etc. disclosed in Japanese Laid-Open Patent Publication 60-196956 publication, described elastomeric adhesive, acrylic adhesive etc. comprise: the polyaddition compound with two or more unsaturated link(age), the photopolymerizable compound such as organoalkoxysilane with epoxy group(ing); With Photoepolymerizationinitiater initiaters such as carbonyl compound, organosulfur compound, superoxide, amine, salt based compounds.
In the binder layer 12 of described radiation curable, also can as required containing the compound painted by irradiation with radiation.By containing the compound painted by irradiation with radiation in binder layer 12, can only make the colored parts after by irradiation with radiation.The compound painted by irradiation with radiation be before irradiation with radiation for colourless or light but become coloured compound by uviolizing, such as leuco dye (ロ イ コ dyestuff) can be enumerated.The usage ratio of the compound painted by irradiation with radiation can suitably set.
The thickness of binder layer 12 is not particularly limited, but from the viewpoint of have concurrently prevent chip cutting face defect, chip join film 3 fixing maintenance etc., be preferably 1 μm ~ about 50 μm.More preferably 2 μm ~ 30 μm, further preferably 5 μm ~ 25 μm.
The chip join film 3 of cutting-chip join film 10 is protected by partition usually.
Cutting-chip join film 10 can be manufactured by usual method.Such as, by being fitted with chip join film 3 by the binder layer 12 of dicing tape 1, cutting-chip join film 10 can be manufactured.
(stacked film 2)
As shown in figs. 34, stacked film 2 possesses: partition 9, the multiple cuttings-chip join film 10 be configured on partition 9.Cutting-chip join film 10 configures multiple on partition 9 with arranging certain intervals.
The protecting materials of partition 9 as protect IC bonding film 3 before supply practical application plays a role.Partition 9 is being stripped during laminated semiconductor wafer on chip join film 3.As partition 9, polyethylene terephthalate (PET), polyethylene, polypropylene can be used or carried out the plastics film or paper etc. of surface application by strippers such as fluorine-containing stripper, chain alkyl esters of acrylic acid strippers.
[manufacture method of semiconductor device]
The manufacture method of semiconductor device is described.
As shown in Figure 5, cutting-chip join film 10 is crimped on semiconductor wafer 4.As semiconductor wafer 4, can enumerate: silicon wafer, silicon carbide wafer, compound semiconductor wafer etc.As compound semiconductor wafer, gallium nitride wafer etc. can be enumerated.
As compression bonding method, can enumerate such as, utilize the squeeze unit such as crimping roller to carry out the method etc. extruded.
Crimping temperature (sticking temperature) preferably more than 35 DEG C, more preferably more than 37 DEG C.The upper limit of preferred crimping temperature is low, preferably less than 50 DEG C, more preferably less than 45 DEG C.By crimping with low temperature, the heat affecting to semiconductor wafer 4 can be prevented, the warpage of semiconductor wafer 4 can be suppressed.
In addition, pressure is preferably 1 × 10
5pa ~ 1 × 10
7pa, is more preferably 2 × 10
5pa ~ 8 × 10
6pa.
Then, as shown in Figure 6, the cutting of semiconductor wafer 4 is carried out.That is, semiconductor wafer 4 be cut into the size of regulation and by its singualtion, cut out semi-conductor chip 5.Cutting utilizes well-established law to carry out.In addition, in this operation, such as can adopt be cut into cutting-chip join film 10 be called the cutting mode entirely cut.In addition, as the cutting unit used in this operation, be not particularly limited, known device can be used.In addition, semiconductor wafer 4 is adhesively fixed by cutting-chip join film 10, therefore can suppress chip defect, chip disperses, and also can suppress the breakage of semiconductor wafer 4.
In order to be peeled off by the semi-conductor chip 5 being bonded and fixed to cutting-chip join film 10, carry out the pickup of semi-conductor chip 5.As the method for pickup, be not particularly limited, existing known various method can be used.Such as can enumerate: from cutting-chip join film 10 side, each semi-conductor chip 5 is upwards pushed away with pin, be picked up the method etc. of the semi-conductor chip 5 be pushed by pickup device.
At this, when binder layer 12 is ultraviolet hardening, pick up after to this binder layer 12 irradiation ultraviolet radiation.Thus, the bounding force of binder layer 12 pairs of chip join films 3 declines, and the stripping of semi-conductor chip 5 becomes easy.As a result, can pick up when not damaging semi-conductor chip 5.The conditions such as exposure intensity during irradiation ultraviolet radiation, irradiation time are not particularly limited, and can suitably set as required.
As shown in Figure 7, the semi-conductor chip 5 of pickup is bonded and fixed to adherend 6 by chip join film 3, obtains the adherend 61 with semi-conductor chip.Adherend 61 with semi-conductor chip possesses: adherend 6, the semi-conductor chip 5 being configured in the chip join film 3 on adherend 6 and being configured on chip join film 3.
Chip attachment temperature is preferably more than 80 DEG C, more preferably more than 90 DEG C.In addition, chip attachment temperature is preferably less than 150 DEG C, more preferably less than 130 DEG C.By being set as less than 150 DEG C, the generation of warpage can be prevented.
Then, under an increased pressure the adherend 61 with semi-conductor chip is heated, make chip join film 3 thermofixation thus, make semi-conductor chip 5 and adherend 6 set.By making chip join film 3 thermofixation under an increased pressure, the space existed between chip join film 3 and adherend 6 can be eliminated, the area that chip join film 3 contacts with adherend 6 can be guaranteed.
As the method for carrying out under an increased pressure heating, such as following methods etc. can be enumerated: the adherend 61 with semi-conductor chip configured in the chamber being filled with inactive gas is heated.
The pressure of pressured atmosphere is preferably 0.5kg/cm
2(4.9 × 10
-2mPa) more than, more preferably 1kg/cm
2(9.8 × 10
-2mPa) more than, preferred 5kg/cm further
2(4.9 × 10
-1mPa) more than.If 0.5kg/cm
2above, then the space existed between chip join film 3 and adherend 6 can easily be eliminated.The pressure of pressured atmosphere is preferably 20kg/cm
2(1.96MPa) below, more preferably 18kg/cm
2(1.77MPa) below, further preferably 15kg/cm
2(1.47MPa) below.If 20kg/cm
2below, then exposing of the chip join film 3 excessively caused by pressurization can be suppressed.
Heating temperature when heating under an increased pressure, is preferably more than 80 DEG C, more preferably more than 100 DEG C, preferably more than 120 DEG C further, particularly preferably more than 170 DEG C.If more than 80 DEG C, then chip join film 3 can be made to reach the hardness of appropriateness, by cure under pressure, effectively can eliminate space.Heating temperature is preferably less than 260 DEG C, more preferably less than 200 DEG C, more preferably less than 180 DEG C.If less than 260 DEG C, the decomposition of the chip join film 3 before solidifying can be prevented.
Be preferably more than 0.1 hour heat-up time, more preferably more than 0.2 hour, preferably more than 0.5 hour further.If more than 0.1 hour, then can obtain the effect of pressurizeing fully.Be preferably less than 24 hours heat-up time, more preferably less than 3 hours, preferably less than 1 hour further.
As shown in Figure 8, the wire bond operation utilizing bonding wire 7 to be electrically connected with the electrode pad on semi-conductor chip 5 front end of the portion of terminal (inner lead) of adherend 6 is carried out.As bonding wire 7, such as gold thread, aluminum steel or copper cash etc. can be used.Carry out temperature during wire bond, be preferably more than 80 DEG C, more preferably more than 120 DEG C, this temperature is preferably less than 250 DEG C, more preferably less than 175 DEG C.In addition, at least carry out its heat-up time several seconds ~ several minutes (being such as 1 second ~ 1 minute).Under carrying out heating condition in the mode reached in described temperature range, by and with based on hyperacoustic vibrational energy and based on apply pressurization crimping energy, carry out wiring.
Then, the sealing process utilizing sealing resin 8 to be sealed by semi-conductor chip 5 is carried out.This operation is carried out to protect semi-conductor chip 5, the bonding wire 7 being equipped on adherend 6.This operation is by being undertaken sealing resin shaping with mould.As sealing resin 8, such as, use epoxy system resin.Heating temperature during resin seal is preferably more than 165 DEG C, and more preferably more than 170 DEG C, this Heating temperature is preferably less than 185 DEG C, more preferably less than 180 DEG C.
Can heat further (after fixing operation) sealer as required.Thus, can solidify solidifying in sealing process insufficient sealing resin 8 completely.Heating temperature can suitably set.
As mentioned above, by comprising the method for the operation utilizing chip join film 3 semi-conductor chip 5 to be fixed on adherend 6 and the operation making chip join film 3 solidify after operation semi-conductor chip 5 being fixed on adherend 6, compatibly semiconductor device can be produced.
(variation 1)
As shown in Figure 9, in variation 1, chip join film 3 possesses: for pasting the paste section 31 of semiconductor wafer 4 and being configured at the non-paste section 32 of periphery of paste section 31.Non-paste section 32 is provided with mark 301.Owing to being provided with mark 301 in non-paste section 32, therefore when being fitted with dicing tape 1 by chip join film 3, easily contraposition can be carried out.In addition, the presence or absence of chip join film 3 can easily be judged.In addition, when carrying out quality and checking, the exception of the shape of chip join film 3 can be detected.
Mark 301 can be familiar with optically.Such as, in mark 301, wavelength is that the transmissivity of light under all zones of 400nm ~ 600nm is preferably 0% ~ 20%, more preferably 0% ~ 10%.If less than 20%, then sensor can be utilized easily to carry out position understanding.
The method arranging mark 301 in non-paste section 32 is not particularly limited, such as, have following method etc.: by ink-jet arrange mark 301 method, when applying chip join film 3, limit is formed patterned sides coating thus arranges the method for mark 301, arranged the method for mark 301 by adhesive film or adhesive tape.
(variation 2)
As shown in Figure 10, in variation 2, partition 9 possesses: the laminated section 91 contacted with chip join film 3, be configured in laminated section 91 periphery peripheral part 92 and be configured in the periphery 93 of periphery of peripheral part 92.Laminated section 91 contacts with chip join film 3.On the other hand, peripheral part 92 and periphery 93 do not contact with chip join film 3.
Whole peripheral part 92 is provided with indentation 901.Owing to being provided with indentation 901 at peripheral part 92, therefore when being fitted with dicing tape 1 by chip join film 3, easily contraposition can be carried out.
For the reason easily can carrying out position understanding, the degree of depth of indentation 901 is preferably 5 μm ~ 45 μm.
(variation 3)
As shown in figure 11, in variation 3, a part for peripheral part 92 is provided with indentation 901.
(variation 4)
As shown in figure 12, in variation 4, the edge of whole laminated section 91 is provided with indentation 901.Owing to being provided with indentation 901 at the edge of laminated section 91, therefore when being fitted with dicing tape 1 by chip join film 3, easily contraposition can be carried out.It should be noted that, also indentation 901 can be set in the part at the edge of laminated section 91.
(other)
Above-mentioned each variation can suitably combine.
Embodiment
Below, use embodiment to explain the present invention, but the present invention only otherwise exceed its main idea, be then not limited to following embodiment.
The composition used in embodiment is described.
Acrylic rubber: long rapids テ イ サ Application レ ジ Application SG-P3 (acrylate copolymer containing epoxy group(ing), Mw:85 ten thousand, second-order transition temperature: 12 DEG C) changing into (strain) and make
The YA050C (silicon-dioxide, median size: 50nm) of silica filler 1:Admatechs Inc.
The SO-E1 (silicon-dioxide, median size: 250nm) of silica filler 2:Admatechs Inc.
The SO-E2 (silicon-dioxide, median size: 500nm) of silica filler 3:Admatechs Inc.
[making of cutting-chip join film]
According to the proportioning described in table 1, acrylic rubber and silica filler are dissolved in methylethylketone (MEK), make them disperse, obtain the adhesive compound solution being suitable for the viscosity applied.Afterwards, after via the upper coating binder composition solution of polyethylene terephthalate film (hereinafter also referred to demoulding process film) of the thickness after silicone demoulding process 50 μm, at 130 DEG C, drying 2 minutes, obtains chip join film (thickness 25 μm).
At 25 DEG C, chip join film is pasted on the binder layer of dicing tape (P2130G that day east electrician (strain) makes), make cutting-chip join film.
[evaluation]
Cutting-chip join film is used to carry out following evaluation.Result is as shown in table 1.
(mist degree)
From cutting-chip join film removing dicing tape, obtain chip join film.
Chip join film is arranged at the sample chamber of turbidometer (NDH2000 of Japanese electric look industry system), uses light source D65 to measure mist degree.
(transmittance of chip join film)
From cutting-chip join film removing dicing tape, obtain chip join film.
Chip join film is fixed on film clamper (FLH-741, Shimadzu Seisakusho Ltd. of company system), use UV, visible light near infrared spectrometer (V-670DS of Japanese light splitting Inc.), under the condition of finding speed 2000nm/min, some footpath 2mm (diameter), measurement range 350 ~ 800nm, measure parallel transmission.
(transmittance of the chip join film after 200% stretching)
From cutting-chip join film removing dicing tape, obtain chip join film.
The test film of vertical 2cm × horizontal 4cm × thickness 25 μm is cut out from chip join film.On test film, paste 2 Kapton Tapes in the mode arranging 1cm interval.Thus, obtain test film and on test film, possess 2 arranging the interval of 1cm and the test film of the Kapton Tape configured.The test film of tension test sheet is until the interval of Kapton Tape reaches 2cm.With adhesive tape, the test film of the state after stretching is fixed on the mensuration mask of diameter 2mm.Then, test film is arranged at film clamper (FLH-741, Shimadzu Seisakusho Ltd. of company system), and use UV, visible light near infrared spectrometer (Japanese light splitting Inc., V-670DS), under the condition of finding speed 2000nm/min, some footpath 2mm (diameter), measurement range 350 ~ 800nm determination test film stretching after the parallel transmission of part.
(transmittance of dicing tape)
From cutting-chip join film removing chip join film, obtain dicing tape.
Dicing tape is fixed on film clamper (FLH-741, Shimadzu Seisakusho Ltd. of company system), use UV, visible light near infrared spectrometer (Japanese light splitting Inc., V-670DS), under the condition of finding speed 2000nm/min, some footpath 2mm (diameter), measurement range 350 ~ 800nm, parallel transmission is measured.It should be noted that, the 2nd interarea to the base material of dicing tape irradiates light.
(surface roughness Ra)
Surface roughness Ra is measured to the 2nd interarea of the base material of dicing tape.
Based on JIS B 0601, the non-contact three-dimensional roughness measuring instrument (NT3300) of Veeco Inc. is used to carry out chart surface roughness.Condition determination is set to 50 times, imposes median filter (Median filter) obtain measured value to determination data.Change measurement site and carry out 5 mensuration, using its mean value as surfaceness.
(treatability)
Cutting-chip join film is fitted in the silicon wafer after thickness is adjusted to 50 μm by the pressure of 0.1MPa by grinding at 60 DEG C.Use cutting unit (DFD6361, DISCO Inc.) silicon wafer and chip join film to be cut into the size of 5mm × 5mm, obtain chip join chip.Chip join chip possesses chip and is configured in the chip join agent on chip.Use chip bonding device (SPA-300, Xin Chuan Inc.), use possesses the bottom surface of area 5mm × 5mm and is provided with the rubber chuck (ラ バ ー コ レ ッ ト of the adsorption hole of diameter 1mm in the central authorities of bottom surface), 120 DEG C, 0.1 second, under the condition of 0.1kg, by chip join chip join on flat copper lead frame.Thus, the lead frame with chip is obtained.Use ultrasonic wave mapping device (the Hybrid SAT of Hitachi Power Solutions Inc.), the lead frame with chip is confirmed to the presence or absence in space.Select the lead frame with chip observing the space of more than 1mm, be confirmed whether to observe space from the side opticmicroscope (VHX-2000 of Keyemce Inc.) of chip.The situation that can confirm space is judged to be zero, the situation that cannot confirm space is judged to be ×.
[table 1]
Claims (15)
1. a chip join film, its mist degree is 0% ~ 25%.
2. chip join film as claimed in claim 1, its wavelength is that the transmissivity of the light of 600nm is more than 85%.
3. chip join film as claimed in claim 1 or 2, its wavelength is that the transmissivity of the light of 400nm is more than 85%.
4. the chip join film according to any one of claims 1 to 3, wavelength is that the transmissivity of light under all zones of 400nm ~ 600nm is more than 85%.
5. a cutting-chip join film, it possesses:
Have the dicing tape of base material and configuration binder layer on the substrate,
The mist degree be configured on described binder layer is the chip join film of 0% ~ 25%.
6. cutting-chip join film as claimed in claim 5, wherein,
Described chip join film is that the transmissivity of the light of 600nm is low by more than 5% than the wavelength under the state of not elongating to elongate the wavelength under the state of 200% be the transmissivity of the light of 600nm.
7. the cutting as described in claim 5 or 6-chip join film, wherein,
Described chip join film possesses the paste section for pasting semiconductor wafer and is configured in the non-paste section of periphery of described paste section,
Described non-paste section is provided with mark.
8. cutting-chip join film as claimed in claim 7, wherein,
Described mark can identify optically.
9. the cutting according to any one of claim 5 ~ 8-chip join film, wherein,
The transmissivity of the light of described base material under wavelength is all zones of 400nm ~ 600nm is 0% ~ 20%.
10. the cutting according to any one of claim 5 ~ 9-chip join film, wherein,
Described base material defines two sides by the 1st interarea contacted with described binder layer and the 2nd interarea relative with described 1st interarea,
The surface roughness Ra of described 2nd interarea is 0.5 μm ~ 5 μm.
11. 1 kinds of stacked films, it possesses partition and cutting-chip join film,
Described cutting-chip join film has chip join film and dicing tape,
Described chip join film is configured on described partition and mist degree is 0% ~ 25%,
Described dicing tape possesses the binder layer be configured on described chip join film and the base material be configured on described binder layer.
12. stacked films as claimed in claim 11, wherein,
Described partition possesses the peripheral part of the laminated section contacted with described chip join film and the periphery being configured in described laminated section,
Described peripheral part is provided with mark.
13. stacked films as claimed in claim 11, wherein,
Described partition possesses the laminated section contacted with described chip join film,
The edge of described laminated section is provided with mark.
14. stacked films as described in claim 12 or 13, wherein,
Describedly be labeled as indentation.
15. stacked films as claimed in claim 14, wherein,
The degree of depth of described indentation is 5 μm ~ 45 μm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014074040A JP6374199B2 (en) | 2014-03-31 | 2014-03-31 | Die bond film, dicing die bond film and laminated film |
| JP2014-074040 | 2014-03-31 |
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| Publication Number | Publication Date |
|---|---|
| CN104946147A true CN104946147A (en) | 2015-09-30 |
| CN104946147B CN104946147B (en) | 2020-08-11 |
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| CN201510142546.5A Active CN104946147B (en) | 2014-03-31 | 2015-03-27 | Die bonding film, dicing die bonding film, and laminated film |
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| Country | Link |
|---|---|
| JP (1) | JP6374199B2 (en) |
| KR (1) | KR102349546B1 (en) |
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| CN108178990A (en) * | 2016-12-08 | 2018-06-19 | 日东电工株式会社 | Adhering film, dicing/die bonding film, the manufacturing method of semiconductor device and semiconductor device |
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| JP6422462B2 (en) * | 2016-03-31 | 2018-11-14 | 古河電気工業株式会社 | Electronic device packaging tape |
| KR20200135279A (en) * | 2018-03-23 | 2020-12-02 | 린텍 가부시키가이샤 | Die bonding film, dicing die bonding sheet, and manufacturing method of semiconductor chip |
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| CN111128807B (en) * | 2019-12-27 | 2023-06-23 | 青岛歌尔微电子研究院有限公司 | Incomplete wafer processing method, device, equipment and medium |
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| CN107434955A (en) * | 2016-05-30 | 2017-12-05 | 日东电工株式会社 | The manufacture method of die bonding film, diced chip bonding film and semiconductor device |
| CN107434955B (en) * | 2016-05-30 | 2021-09-21 | 日东电工株式会社 | Die bonding film, dicing die bonding film, and method for manufacturing semiconductor device |
| CN108178990A (en) * | 2016-12-08 | 2018-06-19 | 日东电工株式会社 | Adhering film, dicing/die bonding film, the manufacturing method of semiconductor device and semiconductor device |
| CN108178990B (en) * | 2016-12-08 | 2021-12-31 | 日东电工株式会社 | Adhesive film, dicing die-bonding film, method for manufacturing semiconductor device, and semiconductor device |
| CN108428615A (en) * | 2017-02-14 | 2018-08-21 | 株式会社斯库林集团 | Substrate processing method using same and its device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015198120A (en) | 2015-11-09 |
| KR102349546B1 (en) | 2022-01-10 |
| JP6374199B2 (en) | 2018-08-15 |
| KR20150113829A (en) | 2015-10-08 |
| TW201542756A (en) | 2015-11-16 |
| TWI667318B (en) | 2019-08-01 |
| CN104946147B (en) | 2020-08-11 |
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