TWI667318B - Die-bonding film, dicing die-bonding film and laminated film - Google Patents

Abstract

The present invention provides a die-bonding film or the like that can observe voids non-destructively without sacrificing a semiconductor device. A grain-bonding film with a haze of 0% to 25%.

Description

Die-bonding film, dicing die-bonding film and laminated film

This invention relates to a die-bonding film, a dicing die-bonding film, and a laminated film.

A method is known in which a die-bonding film is used when a semiconductor wafer is adhered to an adherend such as a metal lead frame (for example, refer to Patent Document 1).

In these methods, voids are sometimes generated in the die-bonding film after wafer bonding. The void reduces the reliability of a semiconductor device evaluated by moisture absorption reflow resistance, HAST (High Accelerated Stress Test), and the like, and causes failure of the semiconductor device.

[Advanced technical literature] [Patent Literature]

[Patent Document 1] Japanese Unexamined Patent Publication No. 6-145639

Conventional grain-bonding films contain opaque fillers of about 500 nm and are therefore opaque. Therefore, in order to observe the voids in the die-bonding film, an ultrasonic imaging device (SAT) is generally used. However, in the case of observation using an ultrasonic imaging device, the semiconductor device needs to be immersed in water. Therefore, it is necessary to sacrifice the semiconductor device in order to perform the test.

An object of the present invention is to solve the foregoing problems, and to provide a die-bonding film, a dicing die-bonding film, and a laminated film that can observe voids without sacrificing a semiconductor device.

The invention relates to a die-bonding film having a haze of 0% to 25%. The grain-bonding film of the present invention has high transparency, so that voids can be observed without using an ultrasonic imaging device. Therefore, observation can be performed without sacrificing the semiconductor device, and the yield of the semiconductor device can be improved. In addition, defects in the semiconductor device can be reduced.

It is preferable that the light transmittance of the light with a wavelength of 600 nm of the die-bonding film of the present invention exceeds 85%. If it exceeds 85%, the void can be observed visually.

It is preferable that the light transmittance of the light with a wavelength of 400 nm of the die-bonding film of the present invention exceeds 85%. If it exceeds 85%, the gap can be observed with a gap detection device, specifically an optical microscope device linked with an image recognition program.

The grain-bonding film of the present invention has a wavelength of 400 nm to 600 nm The transmittance of light in the entire area is preferably more than 85%. If it exceeds 85%, the gap can be observed visually and with a gap detection device.

The present invention relates to a dicing die-bonding film, comprising: a dicing tape having a substrate and an adhesive layer disposed on the substrate; and a crystal having a haze of 0% to 25% disposed on the adhesive layer. Grain bonding film.

The transmittance of light having a wavelength of 600 nm when the die-bonding film is stretched to 200% is preferably more than 5% lower than the transmittance of light having a wavelength of 600 nm when it is not stretched. Since the grain-bonding film can be easily observed by stretching the grain-bonding film, the presence or absence of the grain-bonding film can be easily confirmed.

However, when the transparency of the die-bonding film is high, it is difficult to know the position of the die-bonding film. Therefore, it is difficult to perform alignment when the die-bonding film is bonded to the dicing tape. In addition, when performing a quality inspection, an abnormality in the shape of the die-bonding film may not be detected.

Therefore, the die-bonding film includes an adhesive portion for attaching a semiconductor wafer and a non-adhesive portion arranged around the adhesive portion, and it is preferable to provide a mark on the non-adhesive portion. It is preferable that the mark is optically recognizable. If a mark is provided in a non-adhesion part, alignment can be performed easily when bonding a die-bonding film and a dicing tape. In addition, the presence or absence of a die-bonding film can be easily determined. In addition, an abnormality in the shape of the die-bonding film may be detected during quality inspection.

The transmittance of light of the substrate in all the regions with a wavelength of 400 nm to 600 nm is preferably 0% to 20%. Therefore, when the dicing die-bonding film is bonded to the semiconductor wafer, the edge of the substrate can be used as a reference. Alignment.

The first main surface that the substrate can contact with the adhesive layer and the second main surface opposite to the first main surface define two surfaces. The surface roughness Ra of the second main surface is preferably 0.5 μm to 5 μm. This can reduce the light transmittance of the substrate.

The present invention also relates to a laminated film including a separator and a dicing die-bonding film disposed on the separator.

The separator preferably includes a laminated portion in contact with the die-bonding film, and an outer peripheral portion arranged on the outer periphery of the laminated portion. It is preferable to provide a mark on an outer peripheral part. In addition, it is preferable to provide a mark on the edge of the laminated portion. If a notch is provided at the edge of the outer peripheral portion and / or the laminated portion, when the die-bonding film is bonded to the dicing tape, alignment can be easily performed.

It is better to mark the cut. For reasons of easy position recognition, the depth of the cut is preferably 5 μm to 45 μm.

According to the present invention, it is possible to provide a die-bonding film, a dicing die-bonding film, and a laminated film in which voids are observed non-destructively without sacrificing a semiconductor device.

1‧‧‧ cutting tape

2‧‧‧ laminated film

3‧‧‧ Grain Bonding Film

4‧‧‧ semiconductor wafer

5‧‧‧ semiconductor wafer

6‧‧‧ Adhesive

61‧‧‧ Adhesive with semiconductor chip

7‧‧‧ welding wire

8‧‧‧sealing resin

9‧‧‧ septa

10‧‧‧ Cutting Die Bonding Film

11‧‧‧ Substrate

11a‧‧‧1st main face

11b‧‧‧ 2nd main face

12‧‧‧ Adhesive layer

31‧‧‧ Adhesive Department

32‧‧‧Non-adhesive section

91‧‧‧Laminated Department

92‧‧‧ Peripheral Department

93‧‧‧ Peripheral

301‧‧‧Mark

901‧‧‧ incision

[Fig. 1] A schematic cross-sectional view of a grain-bonding film.

[Fig. 2] A schematic cross-sectional view of a dicing die-bonding film.

[Fig. 3] A schematic plan view of a laminated film.

Fig. 4 is a schematic cross-sectional view showing a partially enlarged laminated film.

5 is a schematic cross-sectional view showing a state where a semiconductor wafer is arranged on a dicing die-bonding film.

6 is a schematic cross-sectional view showing a state where a semiconductor wafer is singulated.

FIG. 7 is a schematic cross-sectional view of an adherend to which a semiconductor wafer is attached.

FIG. 8 is a schematic cross-sectional view of a semiconductor device.

9 is a schematic cross-sectional view of a die-bonding film according to a first modification.

10 is a schematic cross-sectional view of a laminated film according to a second modification.

11 is a schematic cross-sectional view of a laminated film according to Modification 3. FIG.

12 is a schematic cross-sectional view of a laminated film according to a fourth modification.

[Best Mode for Implementing Invention]

Embodiments are described in detail below to explain the present invention, but the present invention is not limited to these embodiments.

[Embodiment 1]

(Die-bonding film 3)

As shown in FIG. 1, the shape of the die-bonding film 3 is a film. Die bonding The composite film 3 has high transparency, so that voids can be observed without using an ultrasonic imaging device. Therefore, observation can be performed without sacrificing the semiconductor device, and the yield of the semiconductor device can be improved. In addition, defects in the semiconductor device can be reduced.

The haze of the die-bonding film 3 is 25% or less, preferably 20% or less, more preferably 5% or less, and most preferably 10% or less. Since it is 25% or less, it has high transparency and allows observation of voids without using an ultrasonic imaging device. The lower limit of the haze of the die-bonding film 3 is not particularly limited, and is, for example, 0% or more. The lower limit of the haze of the die-bonding film 3 may be, for example, 0.5% or more.

The haze can be measured by the method described in the examples.

Haze can be controlled via an inorganic filler. For example, the haze can be reduced by using an inorganic filler with a small average particle diameter without incorporating an inorganic filler.

In the die-bonding film 3, the transmittance of light having a wavelength of 600 nm is preferably more than 85%, and more preferably 90% or more. If it exceeds 85%, the void can be observed visually. For observation, an optical microscope or the like can be used.

The transmittance of light having a wavelength of 600 nm can be controlled via the particle diameter of the filler. For example, by reducing the particle diameter of the filler, a transmittance exceeding 85% can be obtained.

In the die-bonding film 3, it is preferable that the transmittance of light having a wavelength of 400 nm exceeds 85%. If it exceeds 85%, the gap can be observed with a gap detection device, specifically an optical microscope or the like.

The transmittance of light with a wavelength of 400nm can be passed through the filler The particle size is controlled. For example, by reducing the particle diameter of the filler, a transmittance exceeding 85% can be obtained.

In the die-bonding film 3, it is preferable that the transmittance of light in all the regions having a wavelength of 400 nm to 600 nm exceeds 85%. If it exceeds 85%, the gap can be observed visually and with a gap detection device.

The transmittance of light can be measured by the method described in the examples.

In the die-bonding film 3, the transmittance of light having a wavelength of 600 nm in a stretched state to 200% is preferably lower than the transmittance of a light having a wavelength of 600 nm in a non-stretched state by 5% or more. By extending the die-bonding film 3, the die-bonding film 3 can be easily observed, and therefore the presence or absence of the die-bonding film 3 can be easily confirmed. In the dicing die-bonding film, the presence or absence of the crystalline die-bonding film 3 can be easily confirmed by stretching the dicing die-bonding film. The reason why the transmittance is lowered is presumed to be that the orientation of the polymer contained in the crystal grain bonding film 3 is caused by stretching.

In the die-bonding film 3, the transmittance of light having a wavelength of 600 nm in a state of being stretched to 200% is preferably 70% or less, and more preferably 60% or less. If it is 70% or less, the presence or absence of the die-bonding film 3 can be easily confirmed. The lower limit of the transmittance of the light having a wavelength of 600 nm in a state of being stretched to 200% is not particularly limited, and is, for example, 5%.

In the die-bonding film 3, the transmittance of light having a wavelength of 600 nm in a state of being stretched to 5% is preferably 75% or more, and more preferably 80% or more. If it is 80% or more, transparency can be maintained even after expansion.

The die-bonding film 3 preferably has thermosetting properties.

The die-bonding film 3 preferably contains a thermoplastic resin. Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, neoprene, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, and polybutadiene. Resins, polycarbonate resins, thermoplastic polyimide resins, polyamido resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamidoamine醯 Imine resin or fluororesin. Among these thermoplastic resins, acrylic resins having particularly low ionic impurities, high heat resistance, and ensuring the reliability of semiconductor elements are particularly preferred.

The acrylic resin is not particularly limited, and examples thereof include one or two or more types of esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having a carbon number of 30 or less, particularly 4 to 18 carbon atoms. Polymers (acrylic copolymers) and the like. Examples of the alkyl group include methyl, ethyl, propyl, isopropyl, n-butyl, tert-butyl, isobutyl, pentyl, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, ten Octyl or dodecyl and the like.

The other monomers forming the polymer (acrylic copolymer) are not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, Carboxyl-containing monomers such as fumaric acid or crotonic acid, anhydride monomers such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth) acrylate, (meth) propylene 2-hydroxypropyl acid, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate , 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) methyl acrylate and other hydroxyl-containing monomers; styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamidoamine Sulfonic acid group-containing monomers such as 2-methylpropanesulfonic acid, (meth) acrylamidoaminopropanesulfonic acid, sulfopropyl (meth) acrylate, or (meth) acrylamidooxynaphthalenesulfonic acid; or Phosphate group-containing monomers such as acrylic acid 2-hydroxyethyl phosphate.

Among the acrylic resins, acrylic resins having a weight average molecular weight of 100,000 or more are preferred, 300,000 to 3,000,000 acrylic resins are more preferred, and 500,000 to 2 million acrylic resins are more preferred. This is because if it is within the above numerical range, the adhesion and heat resistance are excellent. The weight average molecular weight is a value measured by GPC (permeation gel chromatography) and calculated by polystyrene conversion.

The content of the thermoplastic resin in the die-bonding film 3 is preferably 5% by weight or more, more preferably 10% by weight or more, and even more preferably 30% by weight or more. The content of the thermoplastic resin is preferably 90% by weight or less, more preferably 80% by weight or less, and even more preferably 70% by weight or less.

The die-bonding film 3 preferably contains a thermosetting resin. Thereby, thermal stability can be improved.

Examples of the thermosetting resin include a phenol resin, an amino resin, an unsaturated polyester resin, an epoxy resin, a urethane resin, a silicone resin, or a thermosetting polyimide resin. Particularly preferred is an epoxy resin with a low content of ionic impurities and the like that corrode semiconductor elements. Also, as Hardeners for epoxy resins, preferably phenolic resins.

The epoxy resin is not particularly limited, and examples thereof include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, Bifunctional epoxy resins and polyfunctional epoxy resins such as naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetrakis (hydroxyphenyl) ethane type, or hydantoin Type, isocyanurate type triglycidyl ester type or glycidylamine type epoxy resin. Among these epoxy resins, phenolic epoxy resin, biphenyl epoxy resin, trihydroxyphenylmethane epoxy resin or tetrakis (hydroxyphenyl) ethane epoxy resin are particularly preferred. This is because these epoxy resins have good reactivity with a phenol resin as a hardener and are excellent in heat resistance and the like.

Phenolic resins function as hardeners for epoxy resins, and examples include phenolic resins such as phenol novolac resin, phenol aralkyl resin, cresol novolac resin, t-butylphenol novolac resin, and nonylphenol novolac resin, Resole phenolic resin, polyhydroxystyrene such as polyparahydroxystyrene, and the like. Among these phenol resins, phenol novolac resin and phenol aralkyl resin are particularly preferable. This is because the connection reliability of the semiconductor device can be improved.

The blending ratio of the epoxy resin and the phenol resin is preferably blended such that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents relative to 1 equivalent of the epoxy group in the epoxy resin component. It is preferably 0.8 to 1.2 equivalents. That is, if the blending ratio of the two is outside the above range, the curing reaction does not proceed sufficiently, and the characteristics of the cured product are liable to deteriorate.

The content of the thermosetting resin in the die-bonding film 3 is 5% by weight or more, more preferably 10% by weight or more, and more preferably 30% by weight or more. The content of the thermosetting resin is 90% by weight or less, preferably 80% by weight or less, and more preferably 70% by weight or less.

The die-bonding film 3 may contain an inorganic filler. In order to improve transparency, an inorganic filler having a small average particle diameter is preferably used.

The average particle diameter of the inorganic filler is preferably 150 nm or less, more preferably 100 nm or less, more preferably 80 nm or less, and particularly preferably 50 nm or less. If it is 150 nm or less, the transparency of the die-bonding film 3 can be improved. On the other hand, the average particle diameter of the inorganic filler is preferably 10 nm or more, and more preferably 25 nm or more. If it is 10 nm or more, the fall of the transmittance by the aggregation of a filler can be prevented.

The average particle diameter can be derived by using a sample arbitrarily extracted from the parent group and measuring with a laser diffraction scattering particle size distribution measuring device.

Examples of the inorganic filler include quartz glass, talc, silicon dioxide (fused silicon dioxide and crystalline silicon dioxide, etc.), aluminum oxide, aluminum nitride, silicon nitride, and boron nitride. As the inorganic filler, a material having conductivity can be preferably used. Examples of the conductive inorganic filler include solder, nickel, copper, silver, and gold. Among them, from the reason that the coefficient of linear expansion can be reduced well, silicon dioxide and aluminum oxide are preferred, and silicon dioxide is more preferred.

As the silicon dioxide, a silicon dioxide powder is preferable, and a fused silicon dioxide powder is preferable. Examples of the fused silica powder include balls The fused silica powder is in the form of a powder, and the fused silica powder is crushed in the form of a powder, but from the viewpoint of fluidity, a spherical fused silica powder is preferable.

The content of the inorganic filler in the die-bonding film 3 is preferably 10% by weight or more, and more preferably 30% by weight or more. On the other hand, the content of the inorganic filler is preferably 90% by weight or less, more preferably 80% by weight or less, and even more preferably 70% by weight or less.

The die-bonding film 3 may contain, in addition to the above-mentioned components, an admixture such as a cross-linking agent or the like generally used in film production.

The die-bonding film 3 can be produced by a general method. For example, it is possible to produce an adhesive composition solution containing the aforementioned components, apply the adhesive composition solution to a predetermined thickness on a substrate separator, form a coating film, and then dry the coating film. Out of the die bonding film 3.

The solvent used in the solution of the adhesive composition is not particularly limited, and an organic solvent capable of uniformly dissolving, kneading, or dispersing the aforementioned components is preferable. Examples include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone; toluene, xylene, and the like. The coating method is not particularly limited. Examples of the solvent coating method include a die coater, a gravure coater, a roll coater, a reverse coater, a comma coater, and a pipe doctor. Cloth machine, screen printing, etc. Among them, a slit coater is preferred from the viewpoint of high uniformity of coating thickness.

As the substrate separator, polyethylene terephthalate (PET), polyethylene, polypropylene, and a fluorine-based release agent, long Surface-coated plastic film, paper, and the like after a release agent such as an alkyl acrylate-based release agent. Examples of the method for applying the adhesive composition solution include roll coating, screen coating, and gravure coating. In addition, the drying conditions of the coating film are not particularly limited, and may be performed, for example, under conditions of a drying temperature of 70 to 160 ° C. and a drying time of 1 to 5 minutes.

As a method for producing the die-bonding film 3, for example, a method such as mixing the above components with a mixer and pressing the obtained mixture to form the die-bonding film 3 is also suitable. Examples of the mixer include a planetary mixer and the like.

The thickness of the die-bonding film 3 is not particularly limited, but is preferably 5 μm or more, and more preferably 15 μm or more. If it is less than 5 μm, a portion that does not adhere to the semiconductor wafer and the semiconductor wafer that are warped may be generated, and the bonding area may become unstable. The thickness of the die-bonding film 3 is preferably 100 μm or less, and more preferably 50 μm or less. If it exceeds 100 μm, the die-bonding film 3 may be excessively extruded due to the load of the wafer mounting, and the pad may be contaminated.

The die-bonding film 3 can be used for manufacturing a semiconductor device. Specifically, it can be used for bonding an adherend to a semiconductor wafer. Examples of the adherend include a lead frame, an interposer, and a semiconductor wafer.

The die-bonding film 3 is preferably used in a form in which the die-bonding film is cut. When used in this form, the semiconductor wafer can be handled while being stuck to the dicing die-bonding film, so the chances of operating the semiconductor wafer alone can be reduced.

(Cut the die-bonding film 10)

As shown in FIG. 2, the dicing die-bonding film 10 includes a dicing tape 1 and a die-bonding film 3 arranged on the dicing tape 1.

The dicing tape 1 includes a base material 11 and an adhesive layer 12 arranged on the base material 11. The die-bonding film 3 is disposed on the adhesive layer 12.

In the base material 11, it is preferable that the transmittance of light in all the regions having a wavelength of 400 nm to 600 nm is low. This is because when the dicing die-bonding film 10 is bonded to the semiconductor wafer 4, alignment can be performed with reference to the edge of the substrate 11 or the like. The transmittance of light in all regions with a wavelength of 400 nm to 600 nm is preferably 0% to 20%, and more preferably 0% to 10%. If it is 20% or less, alignment can be performed using the edge of the substrate 11 or the like as a reference.

The base material 11 defines two surfaces with a first main surface 11 a in contact with the adhesive layer 12 and a second main surface 11 b opposite to the first main surface 11 a. The surface roughness Ra of the second main surface 11b is preferably 0.5 μm or more, and more preferably 1 μm or more. If it is 0.5 μm or more, light is scattered and opaque is achieved. Therefore, the sensor can be used for position recognition. On the other hand, the upper limit of the surface roughness Ra of the second principal surface 11b is not particularly limited. The upper limit of the surface roughness Ra of the second main surface 11b is, for example, 5 μm.

Examples of the substrate 11 include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra-low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, and homopolymerization. Polyolefins such as propylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymers, ionomer resins, ethylene- (meth) acrylic copolymers, ethylene- (methyl Base) acrylate (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate and other polyesters , Polycarbonate, polyimide, polyether ether ketone, polyimide, polyether imide, polyimide, fully aromatic polyimide, polyphenylene sulfide, aromatic polyimide (paper ), Glass, glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, polysiloxane resin, metal (foil), paper, etc.

The base material 11 may include a dye and a pigment in order to facilitate position recognition.

It is preferable that the substrate 11 has ultraviolet transmittance.

In order to improve adhesion and retention with the adjacent layer, the surface of the substrate 11 may be subjected to conventional surface treatments, such as chemical or physical treatments such as chromic acid treatment, ozone exposure, flame exposure, high-voltage electric shock exposure, and ionizing radiation treatment The coating process is performed by a primer (for example, an adhesive substance described later).

The thickness of the base material 11 can be appropriately determined without any particular limitation, but is generally about 5 μm to 200 μm.

The pressure-sensitive adhesive used for forming the pressure-sensitive adhesive layer 12 is not particularly limited. For example, a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber pressure-sensitive adhesive can be used. As a pressure-sensitive adhesive, from the aspects of cleanliness and cleanability of ultra-pure water and organic solvents such as semiconductor wafers and glass to avoid contamination of electronic parts, acrylic polymers based on acrylic polymers An adhesive is preferred.

Examples of the acrylic polymer include (meth) Alkyl acrylates (e.g. methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isoamyl, hexyl, heptyl, octyl , 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl, tridecyl, tetradecyl, cetyl Esters, octadecyl esters, eicosyl esters and other alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon linear or branched alkyl esters) and (meth) acrylic acid One or more cycloalkyl esters (for example, cyclopentyl ester, cyclohexyl ester, etc.) are acrylic polymers and the like as monomer components. Moreover, (meth) acrylate means an acrylate and / or a methacrylate, and all (meth) of this invention has the same meaning.

In order to improve cohesion, heat resistance, and the like, the acrylic polymer may include units corresponding to other monomer components that can be copolymerized with the alkyl (meth) acrylate or cycloalkyl ester as necessary. Examples of such monomer components include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl monomers; anhydride monomers such as maleic anhydride, itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate Ester, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (Meth) acrylic acid- (4-hydroxymethylcyclohexyl) methyl ester and other hydroxyl-containing monomers; styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamidoamino-2-methylpropane Sulfonic acid group-containing monomers such as sulfonic acid, (meth) acrylamidoaminopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acrylamidooxynaphthalenesulfonic acid; Phosphate group-containing monomers such as 2-hydroxyethylpropenylphosphonium phosphate; acrylamide; acrylonitrile and the like. These copolymerizable monomer components may be used singly or in combination of two or more kinds. The use amount of these copolymerizable monomers is preferably 40% by weight or less of the total monomer components.

In addition, for crosslinking, the acrylic polymer may contain a polyfunctional monomer or the like as a comonomer component as necessary. Examples of such a polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, and Pentylene glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylic acid Esters, epoxy (meth) acrylates, polyester (meth) acrylates, urethane (meth) acrylates, and the like. These polyfunctional monomers may be used alone or in combination of two or more. From the viewpoint of adhesive properties and the like, it is preferable that the amount of the polyfunctional monomer used is 30% by weight or less of the total monomer components.

The acrylic polymer can be obtained by polymerizing a single monomer or a mixture of two or more monomers. The polymerization can be performed by any method such as solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization. From the perspective of preventing contamination of clean adherends, the content of low molecular weight substances is preferably small. From this viewpoint, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, and more preferably about 400,000 to 3,000,000.

In addition, in order to increase the number average molecular weight of an acrylic polymer or the like as a base polymer, an external agent may be appropriately used in the adhesive. 部 crosslinking agent. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, and a melamine-based crosslinking agent to perform a reaction. When an external cross-linking agent is used, its use amount can be appropriately determined depending on the balance with the base polymer to be cross-linked and the use application as an adhesive. Generally speaking, it is preferable to blend about 5 parts by weight or less with respect to 100 parts by weight of the base polymer, and it is more preferable to blend 0.1 to 5 parts by weight. In addition, in addition to the aforementioned components, additives such as various conventionally known thickeners and anti-aging agents may be used for the adhesive, if necessary.

The adhesive layer 12 can be formed by a radiation-hardening adhesive. The radiation-curable adhesive can increase the degree of cross-linking by irradiating radiation such as ultraviolet rays, thereby easily reducing its adhesion.

As the radiation-curable adhesive, an adhesive having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. As the radiation-curable adhesive, for example, an additive type in which a radiation-curable monomer component and an oligomer component are blended into a general pressure-sensitive adhesive such as the aforementioned acrylic adhesive and rubber-based adhesive can be exemplified. Radiation hardening adhesive.

Examples of the radiation-hardening monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, and Hydroxymethylmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylic acid Esters, 1,4-butanediol Di (meth) acrylate and the like. Examples of the radiation-hardenable oligomer component include urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based oligomers, and the molecular weight is about 100 to 30,000. The range is appropriate. The blending amount of the radiation-curable monomer component and the oligomer component can be appropriately determined according to the type of the adhesive layer, so as to reduce the adhesive force of the adhesive layer. Generally, it is preferably about 5 to 500 parts by weight and about 40 to 150 parts by weight based on 100 parts by weight of a base polymer such as an acrylic polymer constituting the adhesive.

In addition, as the radiation-curable adhesive, in addition to the additive-type radiation-curable adhesive described above, there may be mentioned those having a carbon-carbon double bond in a polymer side chain or a main chain or at the end of the main chain. The polymer is an inherent type of radiation-curable adhesive as a base polymer. The intrinsic radiation-hardening adhesive does not need to contain or contain a large amount of oligomer components and the like as low-molecular components, so the oligomer components and the like do not move in the adhesive over time. It is preferable to form an adhesive layer having a stable layer structure.

As the aforementioned base polymer having a carbon-carbon double bond, a base polymer having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, a polymer having an acrylic polymer as a basic skeleton is preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymer exemplified above.

The method of introducing a carbon-carbon double bond into the aforementioned acrylic polymer is not particularly limited, and various methods can be adopted, but introducing a carbon-carbon double bond into a polymer side chain is relatively easy in terms of molecular design. For example, Said method: after a monomer having a functional group is copolymerized with an acrylic polymer in advance, a compound having a functional group and a carbon-carbon double bond capable of reacting with the functional group is kept to maintain the radiation hardening property of the carbon-carbon double bond Condensation or addition reaction.

Examples of combinations of these functional groups include a carboxyl group and an epoxy group, a carboxyl group and an aziridinyl group, a hydroxyl group and an isocyanate group, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferred from the viewpoint of easy tracking of the reaction. In addition, as long as the acrylic polymer having a carbon-carbon double bond is generated through a combination of these functional groups, the functional group may be on either side of the acrylic polymer and the compound. It is preferable that an acrylic polymer has a hydroxyl group, and the said compound has an isocyanate group. At this time, examples of the isocyanate compound having a carbon-carbon double bond include methacrylic acid isocyanate, 2-methacrylic acid oxyethyl isocyanate, and m-isopropenyl-α, α-dimethylbenzyl isocyanate Wait. In addition, as the acrylic polymer, an ether-based compound such as the above-mentioned hydroxyl-containing monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like can be used. An acrylic polymer obtained by copolymerization.

The intrinsic radiation-hardening type adhesive may be used alone as the base polymer (especially an acrylic polymer) having a carbon-carbon double bond, or the radiation-curable monomer may be blended without impairing the characteristics. Body composition and oligomer composition. The radiation-curable oligomer component and the like are generally in a range of 30 parts by weight, and preferably in a range of 0 to 10 parts by weight based on 100 parts by weight of the base polymer.

The said radiation hardening type adhesive contains a photoinitiator when it hardens | cures by ultraviolet rays etc. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, 2 Α-keto alcohol compounds such as methyl-2-hydroxyphenylacetone, 1-hydroxycyclohexylphenyl ketone; methoxyacetophenone, 2,2'-dimethoxy-2-phenylacetophenone Acetophenone compounds such as 2,2'-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropane-1-one; Benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether, and anisole methyl ether; ketal compounds such as benzoin dimethyl ketal; aromatic sulfonium such as 2-naphthalenesulfonyl chloride Chlorine-based compounds; 1-benzophenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime and other photoactive oxime-based compounds; benzophenone, benzamylbenzoic acid, 3,3 ' -Benzophenone compounds such as dimethyl-4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone Ketones, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone, and other thioxanthone-based compounds; camphorquinone Halogenated ketone halogenated phosphine oxide hafnium Phosphonate. The blending amount of the photopolymerization initiator is, for example, about 0.05 to 20 parts by weight based on 100 parts by weight of the base polymer such as the acrylic polymer constituting the adhesive.

Examples of the radiation-curable adhesive include rubber-based adhesives and acrylic adhesives disclosed in Japanese Patent Laid-Open No. 60-196956. The rubber-based adhesives and acrylic adhesives include: 2 Additives with more than one unsaturated bond, photopolymerizable compounds such as alkoxysilanes with epoxy groups, carbonyl compounds, and organic sulfur Photopolymerization initiators such as compounds, peroxides, amines, and onium salt compounds.

The radiation-curable adhesive layer 12 may contain a compound colored by radiation irradiation as necessary. By including the compound colored by radiation irradiation in the adhesive layer 12, only the portion irradiated with the radiation can be colored. The compound that is colored by radiation irradiation is a compound that is colorless or light-colored before being irradiated with radiation, but becomes a compound that is colored by radiation irradiation. Examples include leuco dyes. The use ratio of the compound colored by radiation irradiation can be appropriately set.

The thickness of the adhesive layer 12 is not particularly limited, but it is preferably about 1 μm to 50 μm in terms of both prevention of defects on the diced surface of the wafer and fixing and holding of the die-bonding film 3. It is preferably 2 μm to 30 μm, and more preferably 5 μm to 25 μm.

The die-bonding film 3 from which the die-bonding film 10 is cut is generally protected by a spacer.

The dicing die-bonding film 10 can be manufactured by a general method. For example, the dicing die-bonding film 10 can be manufactured by bonding the adhesive layer 12 of the dicing tape 1 and the die-bonding film 3.

(Laminated film 2)

As shown in FIGS. 3 to 4, the laminated film 2 includes a spacer 9 and a plurality of dicing die-bonding films 10 arranged on the spacer 9. A plurality of dicing die-bonding films 10 are provided on the spacer 9 at a constant interval.

The spacer 9 functions as a protective material for protecting the wafer bonding film 3 before being supplied to an actual application. Separator 9 is bonded to the die 3 is peeled off when a semiconductor wafer is bonded. The separator 9 can be surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, and a release agent such as a fluorine-containing release agent or a long-chain alkyl acrylate-based release agent. Plastic film and paper.

[Manufacturing method of semiconductor device]

A method of manufacturing a semiconductor device will be described.

As shown in FIG. 5, the dicing die-bonding film 10 is pressure-bonded to the semiconductor wafer 4. Examples of the semiconductor wafer 4 include a silicon wafer, a silicon carbide wafer, and a compound semiconductor wafer. Examples of the compound semiconductor wafer include a gallium nitride wafer.

Examples of the pressure bonding method include a method of pressing by a pressing unit such as a pressure bonding roller.

The crimping temperature (adhesion temperature) is preferably 35 ° C or higher, and more preferably 37 ° C or higher. The upper limit of the crimping temperature is low, preferably 50 ° C or lower, and more preferably 45 ° C or lower. By performing pressure bonding at a low temperature, thermal influence on the semiconductor wafer 4 can be prevented, and warpage of the semiconductor wafer 4 can be suppressed.

The pressure is preferably 1 × 10 ⁵ Pa to 1 × 10 ⁷ Pa, and more preferably 2 × 10 ⁵ Pa to 8 × 10 ⁶ Pa.

Then, as shown in FIG. 6, dicing of the semiconductor wafer 4 is performed. That is, the semiconductor wafer 4 is cut into a predetermined size and singulated, and the semiconductor wafer 5 is cut out. Cutting is performed by a conventional method. In this step, for example, a cutting method called full cutting, which is cut into the dicing die-bonding film 10, can be used. In addition, as the cutting device used in this step, It does not specifically limit, A conventionally well-known apparatus can be used. In addition, since the semiconductor wafer 4 is adhered and fixed through the dicing die-bonding film 10, wafer defects and wafer scattering can be suppressed, and damage to the semiconductor wafer 4 can also be suppressed.

In order to peel off the semiconductor wafer 5 which is subsequently fixed to the dicing die bonding film 10, the semiconductor wafer 5 is picked up. There is no restriction | limiting in particular as a picking method, Various conventionally well-known methods can be used. For example, a method of pushing each semiconductor wafer 5 upward from the dicing-die bonding film 10 side with a needle, and picking up the pushed semiconductor wafer 5 by a pick-up device, and the like can be cited.

Here, when the adhesive layer 12 is an ultraviolet curing type, the adhesive layer 12 is picked up after being irradiated with ultraviolet rays. Accordingly, the adhesive force of the adhesive layer 12 to the die-bonding film 3 is reduced, and the semiconductor wafer 5 is easily peeled. As a result, pickup can be performed without damaging the semiconductor wafer 5. Conditions such as irradiation intensity and irradiation time when irradiating ultraviolet rays are not particularly limited, and can be appropriately set as necessary.

As shown in FIG. 7, the picked-up semiconductor wafer 5 passes through the die-bonding film 3 and is then fixed to the adherend 6 to obtain an adherend 61 with the semiconductor wafer attached thereto. The adherend 61 to which the semiconductor wafer is attached includes an adherend 6, a die-bonding film 3 arranged on the adherend 6, and a semiconductor wafer 5 arranged on the die-bonding film 3.

The wafer mounting temperature is preferably 80 ° C or higher, and more preferably 90 ° C or higher. The wafer mounting temperature is preferably 150 ° C or lower, and more preferably 130 ° C or lower. By setting the temperature to 150 ° C or lower, warping can be prevented. Raw.

Then, the adherend 61 to which the semiconductor wafer is attached is heated under a pressurized condition, so that the die-bonding film 3 is thermally hardened, and the semiconductor wafer 5 and the adherend 6 are fixed. By thermally hardening the die-bonding film 3 under pressure, a gap existing between the die-bonding film 3 and the adherend 6 can be eliminated, and an area where the die-bonding film 3 and the adherend 6 are in contact can be ensured.

Examples of the method of heating under pressure include heating the adherend 61 with a semiconductor wafer disposed in a chamber filled with an inert gas.

The pressure of the pressurized atmosphere is preferably 0.5 kg / cm ² (4.9 × 10 ^-2 MPa) or more, more preferably 1 kg / cm ² (9.8 × 10 ^-2 MPa) or more, and even more preferably 5 kg / cm ² (4.9 × 10 ^-1 MPa) or more. If it is 0.5 kg / cm ² or more, the gap existing between the die-bonding film 3 and the adherend 6 can be easily eliminated. A pressurized atmosphere of a pressure of 20kg / cm ² (1.96MPa) or less preferably, preferably 18kg / cm ² (1.77MPa) or less, more preferably 15kg / cm ² (1.47MPa) or less. If it is 20 kg / cm ² or less, it is possible to suppress the exposure of the grain-bonding film 3 due to excessive pressure.

The heating temperature when heating under pressure is preferably 80 ° C or higher, preferably 100 ° C or higher, more preferably 120 ° C or higher, and particularly preferably 170 ° C or higher. When the temperature is 80 ° C. or higher, the die-bonding film 3 can have an appropriate hardness, and the void can be effectively eliminated through hardening under pressure. The heating temperature is preferably 260 ° C or lower, more preferably 200 ° C or lower, and even more preferably 180 ° C or lower. If it is 260 ° C or lower, it is possible to prevent grain bonding before hardening Decomposition of the film 3.

The heating time is preferably 0.1 hours or more, more preferably 0.2 hours or more, and even more preferably 0.5 hours or more. If it is 0.1 hour or more, the effect of pressurization can fully be acquired. The heating time is preferably 24 hours or less, more preferably 3 hours or less, and even more preferably 1 hour or less.

As shown in FIG. 8, a wire bonding step of electrically connecting the tip of the terminal portion (internal lead) of the adherend 6 to the electrode pad on the semiconductor wafer 5 by the bonding wire 7 is performed. As the bonding wire 7, for example, a gold wire, an aluminum wire, or a copper wire can be used. The temperature during wire bonding is preferably 80 ° C or higher, more preferably 120 ° C or higher, and the temperature is preferably 250 ° C or lower, and more preferably 175 ° C or lower. The heating time is at least several seconds to several minutes (for example, 1 second to 1 minute). In a state where heating is performed within the aforementioned temperature range, wiring is performed by using a combination of vibration energy based on ultrasonic images and crimping energy based on application of pressure.

Next, a sealing step of sealing the semiconductor wafer 5 with the sealing resin 8 is performed. This step is performed to protect the semiconductor wafer 5 and the bonding wire 7 mounted on the adherend 6. This step is performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature during resin sealing is preferably 165 ° C or higher, more preferably 170 ° C or higher, and the heating temperature is preferably 185 ° C or lower, and more preferably 180 ° C or lower.

The seal may be further heated as necessary (post-curing step). Thereby, the sealing resin 8 which is not sufficiently hardened in the sealing step can be completely cured. The heating temperature can be appropriately set.

As described above, the steps including the step of fixing the semiconductor wafer 5 to the adherend 6 through the die bonding film 3 and the step of hardening the die bonding film 3 after the step of fixing the semiconductor wafer 5 to the adherend 6 are included. The method can suitably manufacture a semiconductor device.

(Modification 1)

As shown in FIG. 9, in the first modification, the die-bonding film 3 includes an adhesive portion 31 for attaching the semiconductor wafer 4 and a non-adhesive portion 32 arranged around the adhesive portion 31. The non-adhesive portion 32 is provided with a mark 301. Since the mark 301 is provided in the non-adhesive part 32, when the die-bonding film 3 and the dicing tape 1 are bonded, alignment can be performed easily. In addition, the presence or absence of the die-bonding film 3 can be easily determined. When the quality inspection is performed, an abnormality in the shape of the die-bonding film 3 can be detected.

The mark 301 can be recognized optically. For example, in the mark 301, the transmittance of light in the entire region with a wavelength of 400 nm to 600 nm is preferably 0% to 20%, and more preferably 0% to 10%. If it is 20% or less, position recognition can be easily performed using a sensor.

The method of setting the mark 301 on the non-adhesive portion 32 is not particularly limited. For example, there are methods such as the method of setting the mark 301 by inkjet, and applying the pattern while coating the die-bonding film 3 to form the mark 301 The method of setting the mark 301 via an adhesive film or an adhesive tape.

(Modification 2)

As shown in FIG. 10, in the second modification, the separator 9 includes a laminated portion 91 that is in contact with the die-bonding film 3, an outer peripheral portion 92 disposed on the outer periphery of the laminated portion 91, and a periphery disposed on the outer peripheral portion 92.的 边 部 93。 The peripheral portion 93. The laminated portion 91 is in contact with the die-bonding film 3. On the other hand, the outer peripheral portion 92 and the peripheral portion 93 are not in contact with the die-bonding film 3.

A cutout 901 is provided in the entire outer peripheral portion 92. Since the cutout 901 is provided in the outer peripheral portion 92, it is possible to easily perform alignment when the die-bonding film 3 is bonded to the dicing tape 1.

For reasons of easy position recognition, the depth of the cutout 901 is preferably 5 μm to 45 μm.

(Modification 3)

As shown in FIG. 11, in the third modification, a cutout 901 is provided in a part of the outer peripheral portion 92.

(Modification 4)

As shown in FIG. 12, in the fourth modification, a cutout 901 is provided on the entire edge of the laminated portion 91. Since the notch 901 is provided at the edge of the laminated portion 91, when the die-bonding film 3 is bonded to the dicing tape 1, alignment can be easily performed. A cutout 901 may be provided in a part of the edge of the laminated portion 91.

(other)

The above-mentioned modifications can be appropriately combined.

[Example]

Hereinafter, the present invention will be described in detail using examples. However, the present invention is not limited to the following examples as long as the gist is not exceeded.

The components used in the examples will be described.

Acrylic rubber: TEISANRESINSG-P3 manufactured by Nagase Kasei Co., Ltd. (epoxy-containing acrylate copolymer, Mw: 850,000, glass transition temperature: 12 ° C)

Silicon dioxide filler 1: YA050C (silicon dioxide, average particle size: 50nm) manufactured by Admatechs

Silicon dioxide filler 2: SO-E1 (silicon dioxide, average particle size: 250nm) manufactured by Admatechs

Silicon dioxide filler 3: SO-E2 (silicon dioxide, average particle size: 500nm) manufactured by Admatechs

[Production of dicing die-bonding film]

According to the blending ratio in Table 1, acrylic rubber and silica filler were dissolved in methyl ethyl ketone (MEK), and they were dispersed to obtain an adhesive adhesive composition solution having a viscosity suitable for coating. After that, a 50 μm-thick polyethylene terephthalate film (hereinafter also referred to as a release film) after being subjected to a polysiloxane release treatment was coated with an adhesive composition solution, and then the temperature was 130 ° C. It dried for 2 minutes, and obtained the crystal grain bonding film (thickness 25 micrometers).

The die-bonding film was adhered to an adhesive layer of a dicing tape (P2130G, manufactured by Nitto Denko Corporation) at 25 ° C. Then, a dicing die-bonding film was produced.

[Evaluation]

The following evaluation was performed using a dicing-die bonding film. The results are shown in Table 1.

(Haze)

The dicing tape was removed from the dicing die-bonding film to obtain a die-bonding film.

The die-bonding film was set in a sample chamber of a haze meter (NDH2000 manufactured by Nippon Denshoku Industries), and the haze was measured using a light source D65.

(Light transmittance of the die-bonding film)

The dicing tape was removed from the dicing die-bonding film to obtain a die-bonding film.

The die-bonding film was fixed to a film holder (FLH-741, manufactured by Shimadzu Corporation), and an ultraviolet-visible near-infrared spectrophotometer (V-670DS manufactured by JASCO Corporation) was used at a measurement speed of 2000 nm / min, Parallel transmittance was measured under conditions of a spot diameter of 2 mm (diameter) and a measurement range of 350 to 800 nm.

(Transmittance of 200% stretched die-bonding film)

The dicing tape was removed from the dicing die-bonding film to obtain a die-bonding film.

A test film having a length of 2 cm × 4 cm × 25 μm in thickness was cut out from the die-bonding film. Two polyimide tapes were affixed to the test film with a 1-cm interval. In this way, a test film and a test piece including two polyimide tapes arranged on the test film with a 1 cm gap therebetween were obtained. The test film of the test piece was stretched until the interval between the polyimide tape reached 2 cm. The test piece in a stretched state was fixed to a measurement mask having a diameter of 2 mm with an adhesive tape. Then, the test piece was set in a film holder (FLH-741, manufactured by Shimadzu Corporation), and an ultraviolet-visible near-infrared spectrophotometer (V-670DS, manufactured by JASCO Corporation) was used at a measurement speed of 2000 nm / min. The parallel transmittance of the stretched portion of the test film was measured under conditions of a spot diameter of 2 mm (diameter) and a measurement range of 350 to 800 nm.

(Transmittance of cutting tape)

The die-bonding film was removed from the dicing-die-bonding film to obtain a dicing tape.

The dicing tape was fixed to a film holder (FLH-741, manufactured by Shimadzu Corporation), and an ultraviolet-visible near-infrared spectrophotometer (manufactured by JASCO Corporation, V-670DS) was used. The parallel transmittance was measured under the conditions of 2 mm (diameter) and a measurement range of 350 to 800 nm. Moreover, light was irradiated to the 2nd main surface of the base material of a dicing tape.

(Surface roughness Ra)

The surface roughness Ra was measured about the 2nd main surface of the base material of a dicing tape.

Based on JIS B 0601, a non-contact 3D rough Roughness measuring device (NT3300) to measure surface roughness. The measurement conditions were set to 50 times, and the measurement data was measured by applying a median filter to the measurement data. The measurement site was changed five times, and the average value was used as the surface roughness.

(Handling)

The silicon wafer whose thickness was adjusted to 50 μm by polishing at 60 ° C. and a pressure of 0.1 MPa was bonded to a dicing die-bonding film. The dicing apparatus (DFD6361, manufactured by DISCO Corporation) was used to cut the silicon wafer and the die-bonding film into a size of 5 mm × 5 mm to obtain a wafer for wafer bonding. The wafer for wafer bonding includes a wafer and a wafer bonding agent disposed on the wafer. A wafer bonding device (SPA-300, manufactured by Shinkawa Corporation) was used. A rubber clamp having a bottom surface with an area of 5 mm × 5 mm and an adsorption hole having a diameter of 1 mm was provided at the center of the bottom surface. Under conditions, the wafer for wafer bonding is bonded to a flat lead frame. Thereby, a lead frame with a wafer is obtained. Using an ultrasonic imaging device (Hybrid SAT manufactured by Hitachi Power Solutions), the presence or absence of voids was confirmed on the lead frame with the wafer attached. A lead frame with a wafer where a gap of 1 mm or more was observed was selected, and an optical microscope (VHX-2000 manufactured by Keyence Corporation) was used to confirm whether a gap was observed from the side of the wafer. A case where voids can be confirmed is determined as ○, and a case where voids cannot be confirmed is determined as ×.

Claims (18)

A grain-bonding film having a haze of 0% to 25% and a transmittance of a light having a wavelength of 600 nm in a state of being stretched to 200% is higher than a transmittance of a light having a wavelength of 600 nm in an un-elongated state The rate is more than 5% lower. For example, the grain-bonding film of claim 1, wherein the transmittance of light having a wavelength of 600 nm exceeds 85%. For example, the grain-bonding film of claim 1, wherein the transmittance of light having a wavelength of 400 nm exceeds 85%. For example, the grain-bonding film of claim 1, in which the transmittance of light in all regions with a wavelength of 400 nm to 600 nm exceeds 85%. A dicing die-bonding film comprising a dicing tape having a substrate and an adhesive layer disposed on the substrate, and a crystalline die-bonding film having a haze of 0% to 25% disposed on the adhesive layer. The transmittance of the light with a wavelength of 600 nm in a state where the grain-bonding film is stretched to 200% is lower than the transmittance of a light with a wavelength of 600 nm in a state where it is not stretched by more than 5%. The dicing die-bonding film according to claim 5, wherein the die-bonding film includes a sticking portion for sticking a semiconductor wafer and a non-sticking portion arranged around the sticking portion, and a mark is provided on the non-sticking portion. The dicing die-bonding film of claim 6, wherein the aforementioned mark is optically recognizable. For example, the dicing die-bonding film of claim 5, wherein the light transmittance of the substrate in the entire region of the wavelength range of 400 nm to 600 nm is 0% to 20%. The dicing die-bonding film according to claim 5, wherein the base material defines two surfaces by a first main surface in contact with the adhesive layer and a second main surface opposite to the first main surface, and the second main surface The surface roughness Ra is 0.5 μm to 5 μm. A laminated film is provided with a separator, and a dicing die-bonding film. The dicing die-bonding film includes a dicing film and a dicing tape. The dicing film is arranged on the separator and has a haze of 0% ~ 25%, the dicing tape includes an adhesive layer disposed on the die-bonding film and a substrate disposed on the adhesive layer, and the wavelength of the die-bonding film is 600 nm when the die-bonding film is stretched to 200% The transmittance of light is 5% or more lower than the transmittance of light having a wavelength of 600 nm in an unstretched state. The laminated film according to claim 10, wherein the separator includes a laminated portion in contact with the die-bonding film and an outer peripheral portion arranged on an outer periphery of the laminated portion, and a mark is provided on the outer peripheral portion. The laminated film according to claim 10, wherein the separator includes a laminated portion in contact with the die-bonding film, and a mark is provided on an edge of the laminated portion. The laminated film of claim 11 or 12, wherein the aforementioned mark is a cut. For example, the laminated film of claim 13, wherein the depth of the slit is 5 μm to 45 μm. A dicing die-bonding film comprising a dicing tape and a die-bonding film, the dicing tape comprising a base material and an adhesive layer arranged on the base material, the die-bonding film being arranged on the adhesive layer The haze is 0% to 25%. The die-bonding film includes an adhesive portion for attaching a semiconductor wafer and a non-adhesive portion arranged around the adhesive portion. A mark is provided on the non-adhesive portion. A dicing die-bonding film comprising a dicing tape and a die-bonding film, the dicing tape comprising a base material and an adhesive layer arranged on the base material, the die-bonding film being arranged on the adhesive layer And the haze is 0% to 25%, the substrate is defined by the first principal surface in contact with the adhesive layer and the second principal surface opposite to the first principal surface, and the surface of the second principal surface is rough The degree Ra is 0.5 μm to 5 μm. A laminated film is provided with a separator, and a dicing die-bonding film. The dicing die-bonding film includes a dicing film and a dicing tape. The dicing film is arranged on the separator and has a haze of 0% ~ 25%, the dicing tape includes an adhesive layer disposed on the die-bonding film and a base material disposed on the adhesive layer, the separator includes a laminated portion in contact with the die-bonding film, and is disposed on the die-bonding film The outer peripheral portion of the outer periphery of the laminated portion is provided with a mark on the outer peripheral portion. A laminated film is provided with a separator and a dicing die-bonding film. The dicing die-bonding film has a dicing film and a dicing tape. The dicing film is arranged on the separator and has a haze of 0% ~ 25%, the dicing tape includes an adhesive layer disposed on the die-bonding film and a base material disposed on the adhesive layer, the separator includes a laminated portion in contact with the die-bonding film, and the layer Marks are provided at the edges of the joint.