TWI715586B - Dicing wafer bonding film, manufacturing method of semiconductor device, and semiconductor device - Google Patents

Dicing wafer bonding film, manufacturing method of semiconductor device, and semiconductor device Download PDF

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TWI715586B
TWI715586B TW105116458A TW105116458A TWI715586B TW I715586 B TWI715586 B TW I715586B TW 105116458 A TW105116458 A TW 105116458A TW 105116458 A TW105116458 A TW 105116458A TW I715586 B TWI715586 B TW I715586B
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film
adhesive
dicing
wafer
dicing sheet
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TW201701346A (en
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大西謙司
三隅貞仁
宍戶雄一郎
木村雄大
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日商日東電工股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J161/00—Adhesives based on condensation polymers of aldehydes or ketones; Adhesives based on derivatives of such polymers
    • C09J161/04—Condensation polymers of aldehydes or ketones with phenols only
    • C09J161/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/241—Polyolefin, e.g.rubber
    • C09J7/243—Ethylene or propylene polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/255—Polyesters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

本發明係關於切割晶片接合薄膜、半導體裝置的製造方法及半導體裝置。本發明提供可防止覆蓋膜的剝離不良、能夠防止半導體晶片的靜電破壞的切割晶片接合薄膜等。本發明係關於一種切割晶片接合薄膜，其形成為卷狀。切割晶片接合薄膜包含覆蓋膜和配置在覆蓋膜上的切割片一體型接著薄膜。切割片一體型接著薄膜包含切割片，前述切割片包含以第1面和與第1面相反側的第2面來定義兩面的基材層和與第1面接觸的黏合劑層。切割片一體型接著薄膜另包含接著薄膜，前述接著薄膜以與黏合劑層接觸的第1主面和與第1主面相反側的第2主面來定義兩面。第2面的表面電阻值為1.0×1011Ω/sq.以下。第2主面的表面電阻值為1.0×1012Ω/sq.以上。 The present invention relates to a dicing wafer bonding film, a method of manufacturing a semiconductor device, and a semiconductor device. The present invention provides a dicing wafer bonding film that can prevent defective peeling of a cover film and can prevent electrostatic destruction of a semiconductor wafer. The present invention relates to a dicing wafer bonding film formed in a roll shape. The dicing die bonding film includes a cover film and a dicing sheet integrated adhesive film arranged on the cover film. The dicing sheet-integrated adhesive film includes a dicing sheet, and the dicing sheet includes a base layer defining both sides with a first surface and a second surface opposite to the first surface, and an adhesive layer in contact with the first surface. The dicing sheet-integrated adhesive film further includes an adhesive film. The adhesive film defines two surfaces with a first main surface in contact with the adhesive layer and a second main surface opposite to the first main surface. The surface resistance value of the second surface is 1.0×10 11 Ω/sq. or less. The surface resistance value of the second principal surface is 1.0×10 12 Ω/sq. or more.

Description

切割晶片接合薄膜、半導體裝置的製造方法及半導體裝置 Dicing wafer bonding film, manufacturing method of semiconductor device, and semiconductor device

本發明係關於切割晶片接合薄膜、半導體裝置的製造方法及半導體裝置。 The present invention relates to a dicing wafer bonding film, a method of manufacturing a semiconductor device, and a semiconductor device.

已知一種切割晶片接合薄膜，其具有基材層、配置在基材層上的黏合劑層及配置在黏合劑層上的接著薄膜(例如參見專利文獻1)。基材層可以以與黏合劑層接觸的接觸面及與接觸面相反側的背面來定義兩面。 A dicing die bonding film is known which has a base material layer, an adhesive layer arranged on the base material layer, and an adhesive film arranged on the adhesive layer (for example, see Patent Document 1). The substrate layer may define two surfaces with a contact surface in contact with the adhesive layer and a back surface opposite to the contact surface.

近年來，伴隨半導體晶片的高性能化，靜電破壞正成為問題。為了防止靜電破壞，有藉由向黏合劑層中添加導電性材料來提高抗靜電性能的技術。 In recent years, as the performance of semiconductor wafers has increased, electrostatic breakdown has become a problem. In order to prevent electrostatic damage, there is a technology to improve the antistatic performance by adding a conductive material to the adhesive layer.

此外，為了對接著薄膜賦予導電性，也有向接著薄膜中添加導電性材料的技術。 In addition, in order to impart conductivity to the adhesive film, there is also a technique of adding a conductive material to the adhesive film.

先前技術文獻 Prior art literature 專利文獻 Patent literature

專利文獻1：日本特開2015-5636號公報 Patent Document 1: Japanese Patent Application Publication No. 2015-5636

向黏合劑層中添加導電性材料的技術存在下列的問題：在切割時導電性材料會在裝置內飛散並附著於半導體晶圓、半導體晶片。在擴展時導電性材料有時也會飛散。 The technique of adding a conductive material to the adhesive layer has the following problem: the conductive material will scatter in the device and adhere to the semiconductor wafer and the semiconductor wafer during cutting. The conductive material may scatter during expansion.

向接著薄膜中添加導電性材料的技術存在將接著薄膜用於引線掩埋用途時導電性材料會促進引線的腐蝕的問題。另存在切割時導電性材料飛散的問題。 The technique of adding a conductive material to the adhesive film has a problem that the conductive material promotes corrosion of the lead when the adhesive film is used for wire burying. There is also the problem of flying conductive materials during cutting.

此外，在切割晶片接合薄膜中，有時會無法順利剝離覆蓋膜。本發明人對剝離不良的原因進行了深入研究，結果發現，基材層的背面及覆蓋膜的帶電會引起覆蓋膜的剝離不良。 In addition, in the dicing die bonding film, the cover film may not be peeled off smoothly. The inventors of the present invention conducted intensive studies on the cause of the peeling failure, and as a result, found that the charging of the back surface of the base layer and the cover film causes the peeling failure of the cover film.

本發明的目的在於提供可防止覆蓋膜的剝離不良、能夠防止半導體晶片的靜電破壞的切割晶片接合薄膜。 An object of the present invention is to provide a dicing wafer bonding film that can prevent defective peeling of a cover film and can prevent electrostatic destruction of a semiconductor wafer.

本發明的目的另在於提供使用切割晶片接合薄膜的半導體裝置的製造方法。本發明的目的另在於提供使用切割晶片接合薄膜而得到的半導體裝置。 Another object of the present invention is to provide a method of manufacturing a semiconductor device using a dicing wafer bonding film. Another object of the present invention is to provide a semiconductor device obtained by bonding a film using a dicing wafer.

本發明係關於切割晶片接合薄膜，其形成為卷狀。本發明的切割晶片接合薄膜包含覆蓋膜及配置在覆蓋膜上的切割片一體型接著薄膜。切割片一體型接著薄膜包含切割片，前述切割片包含以第1面及與第1面相反側的第2面來定義兩面的基材層及與第1面接觸的黏合劑層。切割片 一體型接著薄膜另包含接著薄膜，前述接著薄膜以與黏合劑層接觸的第1主面及與第1主面相反側的第2主面來定義兩面。第2面的表面電阻值為1.0×1011Ω/sq.以下。由於為1.0×1011Ω/sq.以下，因此能夠防止覆蓋膜的剝離不良。第2主面的表面電阻值為1.0×1012Ω/sq.以上。由於為1.0×1012Ω/sq.以上，因此可防止封裝時等的洩漏電流，能夠防止半導體晶片的靜電破壞。 The present invention relates to a dicing wafer bonding film formed in a roll shape. The dicing wafer bonding film of the present invention includes a cover film and a dicing sheet-integrated adhesive film arranged on the cover film. The dicing sheet-integrated adhesive film includes a dicing sheet, and the dicing sheet includes a substrate layer defining both sides with a first surface and a second surface opposite to the first surface, and an adhesive layer in contact with the first surface. The dicing sheet-integrated adhesive film further includes an adhesive film. The adhesive film defines two surfaces with a first main surface in contact with the adhesive layer and a second main surface opposite to the first main surface. The surface resistance value of the second surface is 1.0×10 11 Ω/sq. or less. Since it is 1.0×10 11 Ω/sq. or less, it is possible to prevent defective peeling of the cover film. The surface resistance value of the second principal surface is 1.0×10 12 Ω/sq. or more. Since it is 1.0×10 12 Ω/sq. or more, it can prevent leakage current during packaging, etc., and can prevent electrostatic damage to the semiconductor wafer.

較佳的是，基材層包含具有第1面的第1基材層及具有第2面的第2基材層。較佳的是，第2基材層含有導電性成分。較佳的是，第2基材層的厚度為1μm~30μm。較佳的是，導電性成分為有機系導電性成分。較佳的是，第2基材層另包含選自由聚乙烯、聚丙烯、乙烯-乙酸乙烯酯共聚物組成的組中的1種以上的樹脂。 Preferably, the substrate layer includes a first substrate layer having a first surface and a second substrate layer having a second surface. Preferably, the second base material layer contains a conductive component. Preferably, the thickness of the second substrate layer is 1 μm to 30 μm. Preferably, the conductive component is an organic conductive component. Preferably, the second substrate layer further contains one or more resins selected from the group consisting of polyethylene, polypropylene, and ethylene-vinyl acetate copolymer.

較佳的是，切割片的斷裂伸長率為500%以上。 Preferably, the elongation at break of the cut sheet is 500% or more.

較佳的是，接著薄膜包含環氧樹脂或酚醛樹脂。較佳的是，接著薄膜包含丙烯酸類樹脂。較佳的是，接著薄膜在25℃的黏著強度為0.2N以上且3.0N以下。 Preferably, the subsequent film contains epoxy resin or phenolic resin. Preferably, the adhesive film contains acrylic resin. Preferably, the adhesive strength of the adhesive film at 25° C. is 0.2N or more and 3.0N or less.

較佳的是，覆蓋膜為聚對苯二甲酸乙二醇酯薄膜。較佳的是，覆蓋膜的厚度為20μm~75μm。 Preferably, the cover film is a polyethylene terephthalate film. Preferably, the thickness of the cover film is 20 μm to 75 μm.

本發明另關於半導體裝置的製造方法，其包括下列步驟：準備切割晶片接合薄膜的步驟；將半導體晶圓壓接於切割片一體型接著薄膜的接著薄膜的步驟；在將半導體晶圓壓接於接著薄膜的步驟之後，藉由進行晶片分割而形成晶片接合用晶片的步驟；及將晶片接合用晶片壓接於被黏 物的步驟。將半導體晶圓壓接於接著薄膜的步驟包括從覆蓋膜剝離切割片一體型接著薄膜的步驟。晶片接合用晶片包含半導體晶片及配置在半導體晶片上的薄膜狀接著劑。 The present invention also relates to a method of manufacturing a semiconductor device, which includes the following steps: a step of preparing a die bonding film; a step of crimping the semiconductor wafer to the bonding film of the dicing sheet-integrated bonding film; After the step of following the thin film, the step of forming a wafer for wafer bonding by performing wafer division; and crimping the wafer for wafer bonding to the bonded wafer The steps of the thing. The step of crimping the semiconductor wafer to the adhesive film includes a step of peeling the dicing sheet-integrated adhesive film from the cover film. The wafer for wafer bonding includes a semiconductor wafer and a film-like adhesive arranged on the semiconductor wafer.

本發明另關於半導體裝置。 The present invention also relates to semiconductor devices.

1‧‧‧切割晶片接合薄膜 1.‧‧Cutting wafer bonding film

11‧‧‧接著薄膜 11‧‧‧Adhesive film

11a‧‧‧第1主面 11a‧‧‧The first main surface

11b‧‧‧第2主面 11b‧‧‧Second main surface

12‧‧‧切割片 12‧‧‧Cutting disc

13‧‧‧覆蓋膜 13‧‧‧Cover film

71‧‧‧切割片一體型接著薄膜 71‧‧‧Cutting piece integrated adhesive film

121‧‧‧基材層 121‧‧‧Substrate layer

121a‧‧‧第1面 121a‧‧‧Side 1

121b‧‧‧第2面 121b‧‧‧Side 2

1211‧‧‧第1基材層 1211‧‧‧The first substrate layer

1212‧‧‧第2基材層 1212‧‧‧Second substrate layer

122‧‧‧黏合劑層 122‧‧‧Adhesive layer

122A‧‧‧接觸部 122A‧‧‧Contact

122B‧‧‧周邊部 122B‧‧‧peripheral part

4‧‧‧半導體晶圓 4‧‧‧Semiconductor wafer

5‧‧‧晶片接合用晶片 5‧‧‧ Chips for chip bonding

41‧‧‧半導體晶片 41‧‧‧Semiconductor chip

111‧‧‧薄膜狀接著劑 111‧‧‧Film adhesive

6‧‧‧被黏物 6‧‧‧Beads

7‧‧‧接合引線 7‧‧‧ Bonding wire

8‧‧‧封裝樹脂 8‧‧‧Encapsulation resin

61‧‧‧被黏物 61‧‧‧Beads

606‧‧‧基板 606‧‧‧Substrate

607‧‧‧接合引線 607‧‧‧bonding wire

611‧‧‧接著層 611‧‧‧Next layer

641‧‧‧半導體晶片 641‧‧‧Semiconductor chip

圖1為切割晶片接合薄膜的概略平面圖。 Fig. 1 is a schematic plan view of a dicing wafer bonding film.

圖2為切割晶片接合薄膜的局部的概略剖面圖。 Fig. 2 is a schematic cross-sectional view of a part of a dicing wafer bonding film.

圖3為半導體裝置的製造步驟的概略剖面圖。 FIG. 3 is a schematic cross-sectional view of the manufacturing process of the semiconductor device.

圖4為半導體裝置的製造步驟的概略剖面圖。 FIG. 4 is a schematic cross-sectional view of the manufacturing process of the semiconductor device.

圖5為半導體裝置的製造步驟的概略剖面圖。 FIG. 5 is a schematic cross-sectional view of the manufacturing process of the semiconductor device.

圖6為半導體裝置的製造步驟的概略剖面圖。 FIG. 6 is a schematic cross-sectional view of the manufacturing process of the semiconductor device.

圖7為變形例4中的切割晶片接合薄膜的局部的概略剖面圖。 7 is a schematic cross-sectional view of a part of a dicing wafer bonding film in Modification 4. FIG.

圖8為變形例7中的半導體裝置的製造步驟的概略剖面圖。 8 is a schematic cross-sectional view of the manufacturing process of the semiconductor device in Modification 7. FIG.

圖9為變形例8中的半導體裝置的製造步驟的概略剖面圖。 9 is a schematic cross-sectional view of the manufacturing process of the semiconductor device in Modification 8.

圖10為實施例中的切割片一體型接著薄膜的概略剖面圖。 Fig. 10 is a schematic cross-sectional view of the dicing sheet-integrated adhesive film in the embodiment.

以下雖揭示實施方式來對本發明進行詳細說明，但本發明並不僅限於這些實施方式。 Although embodiments are disclosed below to describe the present invention in detail, the present invention is not limited to these embodiments.

[實施方式1] [Embodiment 1] (切割芯片接合薄膜1) (Dicing Die Bonding Film 1)

如圖1所示，切割晶片接合薄膜1形成為卷狀。 As shown in FIG. 1, the dicing wafer bonding film 1 is formed in a roll shape.

切割晶片接合薄膜1包含覆蓋膜13及配置在覆蓋膜13上的切割片一體型接著薄膜71a、71b、71c、......、71m(以下總稱為“切割片一體型接著薄膜71”)。切割片一體型接著薄膜71a與切割片一體型接著薄膜71b之間的距離、切割片一體型接著薄膜71b與切割片一體型接著薄膜71c之間的距離、......切割片一體型接著薄膜711與切割片一體型接著薄膜71m之間的距離是一定的。 The dicing die bonding film 1 includes a cover film 13 and a dicing sheet integrated adhesive film 71a, 71b, 71c,..., 71m (hereinafter collectively referred to as "dicing sheet integrated adhesive film 71" arranged on the cover film 13) ). The distance between the dicing sheet-integrated adhesive film 71a and the dicing sheet-integrated adhesive film 71b, the distance between the dicing sheet-integrated adhesive film 71b and the dicing-sheet integrated adhesive film 71c... The distance between the film 711 and the dicing sheet-integrated adhesive film 71m is constant.

如圖2所示，切割片一體型接著薄膜71包含切割片12及配置在切割片12上的接著薄膜11。切割片12包含基材層121及配置在基材層121上的黏合劑層122。基材層121以與黏合劑層122接觸的第1面121a及與第1面121a相反側的第2面121b來定義兩面。接著薄膜11以與黏合劑層122接觸的第1主面11a及與第1主面11a相反側的第2主面11b來定義兩面。第2主面11b與覆蓋膜13接觸。 As shown in FIG. 2, the dicing sheet-integrated adhesive film 71 includes a dicing sheet 12 and an adhesive film 11 arranged on the dicing sheet 12. The dicing sheet 12 includes a substrate layer 121 and an adhesive layer 122 disposed on the substrate layer 121. The base layer 121 defines two surfaces with a first surface 121a in contact with the adhesive layer 122 and a second surface 121b on the opposite side to the first surface 121a. Then, the film 11 defines two surfaces with a first main surface 11a that is in contact with the adhesive layer 122 and a second main surface 11b on the opposite side to the first main surface 11a. The second main surface 11b is in contact with the cover film 13.

第2面121b的表面電阻值為1.0×1011Ω/sq.以下，較佳為8.0×1010Ω/sq.以下。由於為1.0×1011Ω/sq.以下，因此能夠防止覆蓋膜13的剝離不良。第2面121b的表面電阻值的下限例如為1.0×105Ω/sq.、1.0×107Ω/sq.、1.0×108Ω/sq.等。 The surface resistance value of the second surface 121b is 1.0×10 11 Ω/sq. or less, preferably 8.0×10 10 Ω/sq. or less. Since it is 1.0×10 11 Ω/sq. or less, it is possible to prevent defective peeling of the cover film 13. The lower limit of the surface resistance value of the second surface 121b is, for example, 1.0×10 5 Ω/sq., 1.0×10 7 Ω/sq., 1.0×10 8 Ω/sq., etc.

第2面121b的光澤度較佳為1~20。 The glossiness of the second surface 121b is preferably 1-20.

第2主面11b的表面電阻值為1.0×1012Ω/sq.以上，較佳為1.0×1014Ω/sq.以上。由於為1.0×1012Ω/sq.以上，因此可防止封裝時等的洩漏電流，能夠防止半導體晶片的靜電破壞。第2主面11b的表面電阻值的上限例如為1.0×1017Ω/sq.、1.0×1018Ω/sq.等。 The surface resistance value of the second main surface 11b is 1.0×10 12 Ω/sq. or more, preferably 1.0×10 14 Ω/sq. or more. Since it is 1.0×10 12 Ω/sq. or more, it can prevent leakage current during packaging, etc., and can prevent electrostatic damage to the semiconductor wafer. The upper limit of the surface resistance value of the second main surface 11b is, for example, 1.0×10 17 Ω/sq., 1.0×10 18 Ω/sq., or the like.

切割片12的斷裂伸長率較佳為500%以上。如果為500%以上，則擴展性良好。切割片12的霧度較佳為45%~95%。 The elongation at break of the dicing sheet 12 is preferably 500% or more. If it is 500% or more, the scalability is good. The haze of the cutting sheet 12 is preferably 45%-95%.

基材層121的厚度較佳為50μm~150μm。 The thickness of the base layer 121 is preferably 50 μm to 150 μm.

基材層121包含具有第1面121a的第1基材層1211。第1基材層1211可以以第1面121a及與第1面121a相反側的隱藏面來定義兩面。基材層121另包含具有第2面121b的第2基材層1212。第2基材層1212與第1基材層1211的隱藏面接觸。 The base layer 121 includes a first base layer 1211 having a first surface 121a. The first base layer 1211 may define two surfaces with a first surface 121a and a hidden surface on the opposite side of the first surface 121a. The base layer 121 further includes a second base layer 1212 having a second surface 121b. The second base layer 1212 is in contact with the hidden surface of the first base layer 1211.

第1基材層1211包含樹脂。作為樹脂，可列舉出：聚乙烯、聚丙烯、乙烯-乙酸乙烯酯共聚物(EVA)等。由於表現出良好的擴展性而以聚乙烯、聚丙烯、乙烯-乙酸乙烯酯共聚物較佳。從擴展性差的角度來看，聚對苯二甲酸乙二醇酯是不佳的。 The first base layer 1211 contains resin. Examples of resins include polyethylene, polypropylene, ethylene-vinyl acetate copolymer (EVA), and the like. Polyethylene, polypropylene, and ethylene-vinyl acetate copolymers are preferred because they exhibit good scalability. From the perspective of poor scalability, polyethylene terephthalate is not good.

第1基材層1211包含導電性成分的情況下，有時導電性成分會在切割時在裝置內飛散。因此，較佳為第1基材層1211不含導電性成分。 When the first base material layer 1211 contains a conductive component, the conductive component may scatter in the device during cutting. Therefore, it is preferable that the first base material layer 1211 does not contain a conductive component.

第1基材層1211的厚度較佳為30μm~150μm。 The thickness of the first base layer 1211 is preferably 30 μm to 150 μm.

較佳為第2基材層1212包含導電性成分。這是由於，導電性成分會降低第2面121b的表面電阻值。 It is preferable that the second base material layer 1212 contains a conductive component. This is because the conductive component reduces the surface resistance value of the second surface 121b.

作為導電性成分，可列舉出有機系導電性成分、無機系導電性成分等。有機系導電性成分由於不容易脫落、容易與樹脂混合而較佳。作為有機系導電性成分，可列舉出導電性高分子。 Examples of conductive components include organic conductive components and inorganic conductive components. The organic conductive component is preferred because it does not easily fall off and is easily mixed with resin. Examples of organic conductive components include conductive polymers.

較佳第2基材層1212包含樹脂。作為樹脂，可列舉出：聚乙烯、聚丙烯、乙烯-乙酸乙烯酯共聚物等。聚乙烯、聚丙烯、乙烯-乙酸乙烯酯共聚物由於容易與有機系導電性成分混合並表現出良好的擴展性而較佳。從擴展性差的角度來看，聚對苯二甲酸乙二醇酯是不佳的。 Preferably, the second base layer 1212 contains resin. Examples of resins include polyethylene, polypropylene, ethylene-vinyl acetate copolymer, and the like. Polyethylene, polypropylene, and ethylene-vinyl acetate copolymers are preferred because they are easily mixed with organic conductive components and exhibit good expandability. From the perspective of poor scalability, polyethylene terephthalate is not good.

第2基材層1212的厚度較佳為1μm~30μm。 The thickness of the second base layer 1212 is preferably 1 μm to 30 μm.

第1基材層1211的厚度與第2基材層1212的厚度之比(第1基材層1211的厚度/第2基材層1212的厚度)較佳為1~30。 The ratio of the thickness of the first base layer 1211 to the thickness of the second base layer 1212 (thickness of the first base layer 1211/thickness of the second base layer 1212) is preferably 1-30.

黏合劑層122包含與接著薄膜11接觸的接觸部122A。黏合劑層122另包含配置在接觸部122A的周邊的周邊部122B。接觸部122A通過輻射線而被硬化。另一方面，周邊部122B具有通過輻射線而硬化的性質。作為輻射線，較佳為紫外線。 The adhesive layer 122 includes a contact portion 122A that is in contact with the adhesive film 11. The adhesive layer 122 further includes a peripheral portion 122B disposed on the periphery of the contact portion 122A. The contact portion 122A is hardened by radiation. On the other hand, the peripheral portion 122B has a property of being hardened by radiation. As the radiation, ultraviolet rays are preferred.

黏合劑層122由黏合劑所形成，具有黏合性。作為這種黏合劑，沒有特別限制，可以從公知的黏合劑中適當選擇。具體而言，作為黏合劑，例如可以從下述當中適當選擇使用具有所述特性的黏合劑：丙烯酸類黏合劑、橡膠類 黏合劑、乙烯基烷基醚類黏合劑、有機矽類黏合劑、聚酯類黏合劑、聚醯胺類黏合劑、聚氨酯類黏合劑、氟類黏合劑、苯乙烯-二烯嵌段共聚物類黏合劑、在這些黏合劑中調配了熔點約200℃以下的熱熔融性樹脂的蠕變特性改良型黏合劑等公知的黏合劑(例如參見日本特開昭56-61468號公報、日本特開昭61-174857號公報、日本特開昭63-17981號公報、日本特開昭56-13040號公報等)。此外，作為黏合劑，也可以使用輻射線硬化型黏合劑(或能量射線硬化型黏合劑)、熱膨脹性黏合劑。黏合劑可以單獨使用或將2種以上組合使用。 The adhesive layer 122 is formed of an adhesive and has adhesiveness. There are no particular restrictions on this type of adhesive, and it can be appropriately selected from known adhesives. Specifically, as the adhesive, for example, an adhesive having the above characteristics can be appropriately selected from among the following: acrylic adhesive, rubber-based Adhesives, vinyl alkyl ether-based adhesives, silicone-based adhesives, polyester-based adhesives, polyamide-based adhesives, polyurethane-based adhesives, fluorine-based adhesives, styrene-diene block copolymers Types of adhesives, known adhesives such as creep characteristics-improving adhesives in which hot-melt resins having a melting point of about 200°C or less are blended (for example, see Japanese Patent Application Publication No. 56-61468 and Japanese Patent Application Publication 61-174857, Japanese Patent Publication No. 63-17981, Japanese Patent Application Publication No. 56-13040, etc.). In addition, as the adhesive, a radiation curable adhesive (or an energy ray curable adhesive) or a thermally expandable adhesive may also be used. The binder can be used alone or in combination of two or more kinds.

作為黏合劑，可以適宜地使用丙烯酸類黏合劑、橡膠類黏合劑，丙烯酸類黏合劑尤為適宜。作為丙烯酸類黏合劑，可列舉出以使用1種或2種以上(甲基)丙烯酸烷基酯作為單體成分的丙烯酸類聚合物(均聚物或共聚物)作為基礎聚合物的丙烯酸類黏合劑。 As the adhesive, acrylic adhesives and rubber adhesives can be suitably used, and acrylic adhesives are particularly suitable. Examples of acrylic adhesives include acrylic adhesives that use one or more (meth)acrylic acid alkyl esters as the monomer component of an acrylic polymer (homopolymer or copolymer) as the base polymer. Agent.

作為丙烯酸類黏合劑中的(甲基)丙烯酸烷基酯，例如可列舉出：(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸仲丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸異癸酯、 (甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯、(甲基)丙烯酸十七烷基酯、(甲基)丙烯酸十八烷基酯、(甲基)丙烯酸十九烷基酯、(甲基)丙烯酸二十烷基酯等(甲基)丙烯酸烷基酯等。作為(甲基)丙烯酸烷基酯，適宜為烷基的碳數為4~18的(甲基)丙烯酸烷基酯。另外，(甲基)丙烯酸烷基酯的烷基可以是直鏈或支鏈中的任一種。 Examples of the alkyl (meth)acrylate in the acrylic adhesive include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, and (meth)acrylic acid. Isopropyl ester, butyl (meth)acrylate, isobutyl (meth)acrylate, sec-butyl (meth)acrylate, tert-butyl (meth)acrylate, amyl (meth)acrylate, (meth)acrylate Yl)hexyl acrylate, heptyl (meth)acrylate, octyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, nonyl (meth)acrylate , Isononyl (meth)acrylate, Decyl (meth)acrylate, Isodecyl (meth)acrylate, Undecyl (meth)acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, ten (meth)acrylate Pentaalkyl ester, cetyl (meth)acrylate, heptadecyl (meth)acrylate, stearyl (meth)acrylate, nonadecyl (meth)acrylate, ( Alkyl (meth)acrylates such as eicosanyl meth)acrylate. As the alkyl (meth)acrylate, an alkyl (meth)acrylate having 4 to 18 carbon atoms in the alkyl group is suitable. In addition, the alkyl group of the alkyl (meth)acrylate may be either linear or branched.

另外，為了改善內聚力、耐熱性、交聯性等，丙烯酸類聚合物可以根據需要而含有對應於可與(甲基)丙烯酸烷基酯共聚的其他單體成分(共聚性單體成分)的單元。作為這種共聚性單體成分，例如可列舉出：(甲基)丙烯酸(丙烯酸、甲基丙烯酸)、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、馬來酸、富馬酸、巴豆酸等含羧基單體；馬來酸酐、衣康酸酐等含酸酐基單體；(甲基)丙烯酸羥乙酯、(甲基)丙烯酸羥丙酯、(甲基)丙烯酸羥丁酯、(甲基)丙烯酸羥己酯、(甲基)丙烯酸羥辛酯、(甲基)丙烯酸羥癸酯、(甲基)丙烯酸羥基月桂酯、甲基丙烯酸(4-羥基甲基環己基)甲酯等含羥基單體；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺基丙酯、(甲基)丙烯醯氧基萘磺酸等含磺酸基單體；2-羥乙基丙烯醯基磷酸酯等含磷酸基單體；(甲基)丙烯醯胺、 N,N-二甲基(甲基)丙烯醯胺、N-丁基(甲基)丙烯醯胺、N-羥甲基(甲基)丙烯醯胺、N-羥甲基丙烷(甲基)丙烯醯胺等(N-取代)醯胺類單體；(甲基)丙烯酸胺基乙酯、(甲基)丙烯酸N,N-二甲胺基乙酯、(甲基)丙烯酸第三丁基胺基乙酯等(甲基)丙烯酸胺基烷基酯類單體；(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸乙氧基乙酯等(甲基)丙烯酸烷氧基烷基酯類單體；丙烯腈、甲基丙烯腈等氰基丙烯酸酯單體；(甲基)丙烯酸縮水甘油酯等含環氧基丙烯酸類單體；苯乙烯、α-甲基苯乙烯等苯乙烯類單體；乙酸乙烯酯、丙酸乙烯酯等乙烯酯類單體；異戊二烯、丁二烯、異丁烯等烯烴類單體；乙烯醚等乙烯醚類單體；N-乙烯基吡咯烷酮、甲基乙烯基吡咯烷酮、乙烯基吡啶、乙烯基呱啶酮、乙烯基嘧啶、乙烯基呱嗪、乙烯基吡嗪、乙烯基吡咯、乙烯基咪唑、乙烯基噁唑、乙烯基嗎啉、N-乙烯基羧酸醯胺類、N-乙烯基己內醯胺等含氮單體；N-環己基馬來醯亞胺、N-異丙基馬來醯亞胺、N-月桂基馬來醯亞胺、N-苯基馬來醯亞胺等馬來醯亞胺類單體；N-甲基衣康醯亞胺、N-乙基衣康醯亞胺、N-丁基衣康醯亞胺、N-辛基衣康醯亞胺、N-2-乙基己基衣康醯亞胺、N-環己基衣康醯亞胺、N-月桂基衣康醯亞胺等衣康醯亞胺類單體；N-(甲基)丙烯醯氧基亞甲基琥珀醯亞胺、N-(甲基)丙烯醯基-6-氧基六亞甲基琥珀醯亞胺、N-(甲基)丙烯醯基-8-氧基八亞甲基琥珀醯亞胺等琥珀醯亞胺類單體；(甲基)丙烯酸聚乙二醇、(甲基)丙烯酸聚丙 二醇、(甲基)丙烯酸甲氧基乙二醇、(甲基)丙烯酸甲氧基聚丙二醇等二醇類丙烯酸酯單體；(甲基)丙烯酸四氫糠酯、氟(甲基)丙烯酸酯、有機矽(甲基)丙烯酸酯等具有雜環、鹵素原子、矽原子等的丙烯酸酯類單體；己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧丙烯酸酯、聚酯丙烯酸酯、胺基甲酸酯丙烯酸酯、二乙烯基苯、丁基二(甲基)丙烯酸酯、己基二(甲基)丙烯酸酯等多官能單體等。這些共聚性單體成分可以使用1種或2種以上。 In addition, in order to improve cohesion, heat resistance, crosslinkability, etc., the acrylic polymer may contain units corresponding to other monomer components (copolymerizable monomer components) copolymerizable with the alkyl (meth)acrylate as needed. . Examples of such copolymerizable monomer components include (meth)acrylic acid (acrylic acid, methacrylic acid), carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, croton Acid and other carboxyl group-containing monomers; maleic anhydride, itaconic anhydride and other acid anhydride group-containing monomers; hydroxyethyl (meth)acrylate, hydroxypropyl (meth)acrylate, hydroxybutyl (meth)acrylate, (meth) Base) hydroxyhexyl acrylate, hydroxyoctyl (meth)acrylate, hydroxydecyl (meth)acrylate, hydroxylauryl (meth)acrylate, (4-hydroxymethylcyclohexyl) methyl methacrylate, etc. Hydroxy monomer; styrene sulfonic acid, allyl sulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, (meth)acrylamide propanesulfonic acid, (meth)acrylic acid Sulfonic acid group-containing monomers such as methyl propyl ester, (meth)acryloyloxynaphthalenesulfonic acid; 2-hydroxyethyl acryloyl phosphate and other phosphoric acid group-containing monomers; (meth)acrylamide, N,N-dimethyl(meth)acrylamide, N-butyl(meth)acrylamide, N-methylol(meth)acrylamide, N-methylolpropane (meth) (N-substituted) amide monomers such as acrylamide; aminoethyl (meth)acrylate, N,N-dimethylaminoethyl (meth)acrylate, tertiary butyl (meth)acrylate Aminoalkyl (meth)acrylate monomers such as aminoethyl; methoxyethyl (meth)acrylate, ethoxyethyl (meth)acrylate and other (meth)acrylic alkoxyalkyls -Based ester monomers; cyanoacrylate monomers such as acrylonitrile and methacrylonitrile; epoxy-containing acrylic monomers such as glycidyl (meth)acrylate; benzene, such as styrene and α-methylstyrene Vinyl monomers; vinyl ester monomers such as vinyl acetate and vinyl propionate; olefin monomers such as isoprene, butadiene, and isobutylene; vinyl ether monomers such as vinyl ether; N-vinyl pyrrolidone , Methyl vinyl pyrrolidone, vinyl pyridine, vinyl pyridone, vinyl pyrimidine, vinyl pyrazine, vinyl pyrazine, vinyl pyrrole, vinyl imidazole, vinyl oxazole, vinyl morpholine, N -Vinyl carboxylic acid amines, N-vinyl caprolactam and other nitrogen-containing monomers; N-cyclohexylmaleimide, N-isopropylmaleimide, N-laurylmaleimide Maleimines such as imines and N-phenylmaleimines; N-methylitaconimines, N-ethylitaconimines, N-butylitaconimines Itaconic imine, N-octyl itaconic imine, N-2-ethylhexyl itaconic imide, N-cyclohexyl itaconic imide, N-lauryl itaconic imide, etc. Amine monomers; N-(meth)acryloyloxymethylene succinimide, N-(meth)acryloyl-6-oxyhexamethylene succinimide, N-(meth) Base) acryloyl-8-oxyoctamethylene succinimidyl and other succinimidyl monomers; (meth)acrylic acid polyethylene glycol, (meth)acrylic acid polypropylene Glycol acrylate monomers such as diol, methoxy glycol (meth)acrylate, methoxy polypropylene glycol (meth)acrylate, etc.; tetrahydrofurfuryl (meth)acrylate, fluoro(meth)acrylic acid Acrylic monomers with heterocycles, halogen atoms, silicon atoms, such as esters, organosilicon (meth)acrylates, etc.; hexanediol di(meth)acrylate, (poly)ethylene glycol di(methyl) Acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol Tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, epoxy acrylate, polyester acrylate, urethane acrylate, divinylbenzene, butyl di(meth)acrylate , Multifunctional monomers such as hexyl di(meth)acrylate, etc. One kind or two or more kinds of these copolymerizable monomer components can be used.

使用輻射線硬化型黏合劑(或能量射線硬化型黏合劑)作為黏合劑時，作為輻射線硬化型黏合劑(組合物)，例如可列舉出：使用了在聚合物側鏈或主鏈中或主鏈末端具有自由基反應性碳-碳雙鍵的聚合物作為基礎聚合物的內在型的輻射線硬化型黏合劑，在黏合劑中調配有紫外線硬化性的單體成分、低聚物成分的輻射線硬化型黏合劑等。此外，使用熱膨脹性黏合劑作為黏合劑時，作為熱膨脹性黏合劑，例如可列舉出包含黏合劑及發泡劑(特別是熱膨脹性微球)的熱膨脹性黏合劑等。 When a radiation-curable adhesive (or energy-ray-curable adhesive) is used as the adhesive, as a radiation-curable adhesive (composition), for example, the use of or in the side chain or main chain of the polymer The polymer with radical-reactive carbon-carbon double bond at the end of the main chain is an intrinsic radiation-curing adhesive that is a base polymer. The adhesive is blended with ultraviolet-curable monomer components and oligomer components. Radiation hardening adhesives, etc. In addition, when a heat-expandable adhesive is used as the adhesive, examples of the heat-expandable adhesive include a heat-expandable adhesive containing a binder and a foaming agent (especially heat-expandable microspheres).

較佳的單體成分是丙烯酸2-乙基己酯。較佳的丙烯酸類黏合劑包含具有胺基甲酸酯鍵的丙烯酸類聚合物。 The preferred monomer component is 2-ethylhexyl acrylate. Preferred acrylic adhesives include acrylic polymers with urethane bonds.

黏合劑層122可以包含各種添加劑(例如賦黏樹脂、 著色劑、增黏劑、增量劑、填充材料、增塑劑、防老劑、抗氧化劑、表面活性劑、交聯劑等)。 The adhesive layer 122 may contain various additives (e.g., tackifying resin, Colorants, tackifiers, extenders, fillers, plasticizers, antioxidants, antioxidants, surfactants, crosslinkers, etc.).

黏合劑層122例如可以利用下列的慣用方法形成：將黏合劑(壓敏接著劑)與視需要而定的溶劑、其他添加劑等混合，形成片狀的層。具體而言，例如可以通過下述方法等形成黏合劑層122：將含有黏合劑和視需要而定的溶劑、其他添加劑的混合物塗布在基材層121上的方法，在合適的隔膜(剝離紙等)上塗布混合物形成黏合劑層122並將其轉印(轉移)至基材層121上的方法。 The adhesive layer 122 can be formed, for example, by the following conventional method: mixing an adhesive (pressure-sensitive adhesive) with a solvent, other additives, etc. as needed, to form a sheet-like layer. Specifically, the adhesive layer 122 can be formed by, for example, the following method: a method of coating a mixture containing an adhesive, a solvent as necessary, and other additives on the base layer 121, and applying it on a suitable separator (release paper Etc.) A method of applying the mixture to form the adhesive layer 122 and transferring (transferring) it to the base layer 121.

黏合劑層122的厚度較佳為3μm以上，更佳為5μm以上。黏合劑層122的厚度較佳為50μm以下，更佳為30μm以下。另外，黏合劑層122可以形成為多層形狀。 The thickness of the adhesive layer 122 is preferably 3 μm or more, more preferably 5 μm or more. The thickness of the adhesive layer 122 is preferably 50 μm or less, more preferably 30 μm or less. In addition, the adhesive layer 122 may be formed in a multilayer shape.

(接著薄膜11) (Next to film 11)

接著薄膜11具備熱硬化性。 Then, the film 11 has thermosetting properties.

接著薄膜11在25℃的黏著強度較佳為0.2N~3.0N。如果為0.2N~3.0N，則拾取性良好。 Then, the adhesive strength of the film 11 at 25° C. is preferably 0.2N~3.0N. If it is 0.2N to 3.0N, the pick-up is good.

接著薄膜11在120℃的的損耗模量G”較佳為2KPa~20KPa。如果為2KPa以上，則可以防止晶片接合時的接著薄膜11的突出。如果為20KPa以下，則晶片接合時接著薄膜11對被黏物的潤濕性良好。 The loss modulus G" of the film 11 at 120°C is preferably 2KPa to 20KPa. If it is 2KPa or more, the protrusion of the adhesive film 11 during die bonding can be prevented. If it is 20KPa or less, the adhesive film 11 during die bonding can be prevented. Good wettability to adherends.

接著薄膜11包含樹脂成分。作為樹脂成分，可列舉出熱塑性樹脂、熱硬化性樹脂等。 Then, the film 11 contains a resin component. As a resin component, a thermoplastic resin, a thermosetting resin, etc. are mentioned.

較佳為熱塑性樹脂為丙烯酸類樹脂。 Preferably, the thermoplastic resin is an acrylic resin.

作為丙烯酸類樹脂，並沒有特別限定，可列舉出：以具有碳數30以下、特別是碳數4~18的直鏈或支鏈的烷基的丙烯酸或甲基丙烯酸的酯中的1種或2種以上作為成分的聚合物(丙烯酸類共聚物)等。作為前述烷基，例如可列舉出：甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基、或十二烷基等。 The acrylic resin is not particularly limited, and examples thereof include one of acrylic acid or methacrylic acid esters having a carbon number of 30 or less, particularly a linear or branched alkyl group having a carbon number of 4 to 18, or Two or more types of polymers (acrylic copolymers) etc. as components. Examples of the aforementioned alkyl group include methyl, ethyl, propyl, isopropyl, n-butyl, tertiary butyl, isobutyl, pentyl, isopentyl, hexyl, heptyl, and cyclohexyl. , 2-ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, Octadecyl, or dodecyl, etc.

此外，作為形成聚合物(丙烯酸類共聚物)的其他單體，並沒有特別限定，例如可列舉出：丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、馬來酸、富馬酸或巴豆酸等之類的含羧基單體，馬來酸酐或衣康酸酐等各種酸酐單體，(甲基)丙烯酸-2-羥基乙酯、(甲基)丙烯酸-2-羥基丙酯、(甲基)丙烯酸-4-羥基丁酯、(甲基)丙烯酸-6-羥基己酯、(甲基)丙烯酸-8-羥基辛酯、(甲基)丙烯酸-10-羥基癸酯、(甲基)丙烯酸-12-羥基月桂酯或丙烯酸(4-羥基甲基環己酯)-甲酯等各種含羥基單體，苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯醯氧基萘磺酸等各種含磺酸基單體，或2-羥乙基丙烯醯基磷酸酯等各種含磷酸基單體。 In addition, the other monomers forming the polymer (acrylic copolymer) are not particularly limited, and examples include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, and maleic acid. , Fumaric acid or crotonic acid and other carboxyl group-containing monomers, maleic anhydride or itaconic anhydride and other anhydride monomers, (meth)acrylic acid-2-hydroxyethyl, (meth)acrylic acid-2-hydroxy Propyl ester, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate , (Meth) acrylic acid-12-hydroxylauryl ester or acrylic acid (4-hydroxymethylcyclohexyl ester)-methyl and various hydroxyl-containing monomers, styrene sulfonic acid, allyl sulfonic acid, 2-(methyl )Acrylamide-2-methylpropanesulfonic acid, (meth)acrylamide propanesulfonic acid, sulfopropyl (meth)acrylate, or (meth)acryloxynaphthalenesulfonic acid and other sulfonic acid groups Monomers, or various phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate.

丙烯酸類樹脂當中，較佳為重量平均分子量為10萬 以上，更佳為30萬~300萬，進一步較佳為50萬~200萬。這是由於，如果在該數值範圍內，則接著性和耐熱性優異。需要說明的是，重量平均分子量是通過GPC(滲透凝膠色譜)測定並通過聚苯乙烯換算算出的值。 Among acrylic resins, the weight average molecular weight is preferably 100,000 Above, it is more preferably 300,000 to 3 million, and still more preferably 500,000 to 2 million. This is because if it is within this numerical range, the adhesiveness and heat resistance are excellent. It should be noted that the weight average molecular weight is a value measured by GPC (permeation gel chromatography) and calculated in terms of polystyrene.

丙烯酸類樹脂較佳為包含官能團。作為官能團，例如可列舉出：羥基、羧基、腈基等。其中，較佳為腈基。 The acrylic resin preferably contains a functional group. As a functional group, a hydroxyl group, a carboxyl group, a nitrile group, etc. are mentioned, for example. Among them, a nitrile group is preferred.

樹脂成分100重量%中的熱塑性樹脂的含量較佳為10重量%以上，更佳為20重量%以上。如果為10重量%以上，則可撓性良好。樹脂成分100重量%中的熱塑性樹脂的含量較佳為80重量%以下，更佳為70重量%以下。 The content of the thermoplastic resin in 100% by weight of the resin component is preferably 10% by weight or more, more preferably 20% by weight or more. If it is 10% by weight or more, flexibility is good. The content of the thermoplastic resin in 100% by weight of the resin component is preferably 80% by weight or less, more preferably 70% by weight or less.

作為熱硬化性樹脂，可列舉出：環氧樹脂、酚醛樹脂等。 Examples of thermosetting resins include epoxy resins and phenol resins.

作為環氧樹脂，沒有特別限定，例如可使用：雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、芴型、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三羥基苯基甲烷型、四酚基乙烷型等二官能環氧樹脂、多官能環氧樹脂，或乙內醯脲型、三縮水甘油基異三聚氰酸酯型或縮水甘油胺型等的環氧樹脂。這些環氧樹脂當中，特別佳為酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三羥基苯基甲烷型樹脂或四酚基乙烷型環氧樹脂。這是由於，這些環氧樹脂富有與作為硬化劑的酚醛樹脂的反應性，耐熱性等優異。 The epoxy resin is not particularly limited. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, Naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type and other difunctional epoxy resins, multifunctional epoxy resins, or hydantoin type , Triglycidyl isocyanurate type or glycidylamine type epoxy resin. Among these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trihydroxyphenylmethane type resins, or tetraphenol ethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with phenol resins as hardeners and are excellent in heat resistance and the like.

環氧樹脂的環氧當量較佳為100g/eq.以上，更佳為120g/eq.以上。環氧樹脂的環氧當量較佳為1000g/eq.以 下，更佳為500g/eq.以下。 The epoxy equivalent of the epoxy resin is preferably 100 g/eq. or more, more preferably 120 g/eq. or more. The epoxy equivalent of the epoxy resin is preferably 1000 g/eq. It is more preferably 500 g/eq. or less.

需要說明的是，環氧樹脂的環氧當量可以用JIS K 7236-2009中規定的方法進行測定。 It should be noted that the epoxy equivalent of the epoxy resin can be measured by the method specified in JIS K 7236-2009.

酚醛樹脂發揮環氧樹脂的硬化劑的作用，例如可列舉出：苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、壬基苯酚酚醛清漆樹脂等酚醛清漆型酚醛樹脂、甲階酚醛型酚醛樹脂、聚對氧苯乙烯等聚氧苯乙烯等。這些酚醛樹脂當中，特別佳為苯酚酚醛清漆樹脂、苯酚芳烷基樹脂。這是由於，能夠提高半導體裝置的連接可靠性。 Phenolic resins function as hardeners for epoxy resins. Examples include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tertiary butyl phenol novolac resins, nonylphenol novolac resins, etc. Novolak type phenol resin, resol type phenol resin, polyoxystyrene such as polyparaoxystyrene, etc. Among these phenol resins, phenol novolak resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

酚醛樹脂的羥基當量較佳為150g/eq.以上，更佳為200g/eq.以上。酚醛樹脂的羥基當量較佳為500g/eq.以下，更佳為300g/eq.以下。 The hydroxyl equivalent of the phenol resin is preferably 150 g/eq. or more, more preferably 200 g/eq. or more. The hydroxyl equivalent of the phenol resin is preferably 500 g/eq. or less, more preferably 300 g/eq. or less.

對於環氧樹脂與酚醛樹脂的調配比例，例如適宜以酚醛樹脂中的羥基相對於環氧樹脂成分中的環氧基1當量為0.5~2.0當量的方式調配。更適宜的是0.8~1.2當量。即，這是由於，如果兩者的調配比例不在該範圍，則不進行充分的硬化反應，硬化物的特性變得容易劣化。 Regarding the blending ratio of the epoxy resin and the phenol resin, for example, it is suitable to blend such that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin component. More suitable is 0.8~1.2 equivalent. That is, this is because if the blending ratio of the two is out of this range, a sufficient curing reaction will not proceed, and the properties of the cured product will easily deteriorate.

樹脂成分100重量%中的環氧樹脂和酚醛樹脂的合計含量較佳為20重量%以上，更佳為30重量%以上。環氧樹脂和酚醛樹脂的合計含量較佳為90重量%以下，更佳為80重量%以下。 The total content of the epoxy resin and the phenol resin in 100% by weight of the resin component is preferably 20% by weight or more, more preferably 30% by weight or more. The total content of the epoxy resin and the phenol resin is preferably 90% by weight or less, more preferably 80% by weight or less.

較佳的接著薄膜11包含無機填充劑。 Preferably, the adhesive film 11 contains an inorganic filler.

作為無機填充劑，例如可列舉出：二氧化矽、黏土、 石膏、碳酸鈣、硫酸鋇、氧化鋁、氧化鈹、碳化矽、氮化矽、鋁、銅、銀、金、鎳、鉻、鉛、錫、鋅、鈀、焊錫、碳等。其中，較佳為二氧化矽、氧化鋁、銀等，更佳為二氧化矽。 As inorganic fillers, for example, silica, clay, Gypsum, calcium carbonate, barium sulfate, aluminum oxide, beryllium oxide, silicon carbide, silicon nitride, aluminum, copper, silver, gold, nickel, chromium, lead, tin, zinc, palladium, solder, carbon, etc. Among them, silicon dioxide, aluminum oxide, silver, etc. are preferred, and silicon dioxide is more preferred.

無機填充劑的平均粒徑較佳為0.001μm~1μm。填料的平均粒徑可以用以下的方法進行測定。 The average particle diameter of the inorganic filler is preferably 0.001 μm to 1 μm. The average particle size of the filler can be measured by the following method.

無機填充劑的平均粒徑的測定 Determination of the average particle size of inorganic fillers

將接著薄膜11放入坩堝，在大氣環境下以700℃灼燒2小時使其灰化。使所得灰分分散在純水中進行10分鐘超聲波處理，使用雷射繞射散射式細微性分佈測定裝置(Beckman Coulter,Inc.製造、“LS 13 320”；濕式法)求出平均粒徑。 The next film 11 was put in a crucible, and burned at 700°C for 2 hours in an atmosphere to be ashed. The obtained ash was dispersed in pure water and subjected to ultrasonic treatment for 10 minutes, and the average particle size was determined using a laser diffraction scattering type fineness distribution measuring device (manufactured by Beckman Coulter, Inc., "LS 13 320"; wet method).

接著薄膜11中的無機填充劑的含量較佳為0重量%以上，更佳為1重量%以上，進一步較佳為3重量%以上，更進一步較佳為20重量%以上。接著薄膜11中的無機填充劑的含量較佳為85重量%以下，更佳為20重量%以下，進一步較佳為15重量%以下。 Next, the content of the inorganic filler in the film 11 is preferably 0% by weight or more, more preferably 1% by weight or more, still more preferably 3% by weight or more, and still more preferably 20% by weight or more. Next, the content of the inorganic filler in the film 11 is preferably 85% by weight or less, more preferably 20% by weight or less, and still more preferably 15% by weight or less.

接著薄膜11除了前述成分以外還可以適當含有在薄膜製造中常用的調配劑，例如矽烷耦合劑、硬化促進劑、交聯劑等。 Next, the film 11 may contain, in addition to the aforementioned components, a compounding agent commonly used in film production, such as a silane coupling agent, a curing accelerator, a crosslinking agent, and the like.

接著薄膜11含有導電性成分的情況下，有時導電性成分會在切割時在裝置內飛散。有時導電性成分還會促進引線的腐蝕。因此，較佳接著薄膜11不含導電性成分。 Next, when the film 11 contains a conductive component, the conductive component may scatter in the device during cutting. Sometimes the conductive component will also promote the corrosion of the lead. Therefore, it is preferable that the adhesive film 11 does not contain conductive components.

接著薄膜11可以用通常的方法製造。例如可以製作含有前述各成分的接著劑組合物溶液，以成為規定厚度的方式將接著劑組合物溶液塗布在基材隔膜上形成塗布膜後，乾燥塗布膜，由此來製造接著薄膜11。 Then, the film 11 can be manufactured by a usual method. For example, an adhesive composition solution containing the aforementioned components can be prepared, and the adhesive composition solution can be applied to a substrate separator to form a coating film so as to have a predetermined thickness, and then the coating film can be dried to produce the adhesive film 11.

作為接著劑組合物溶液中使用的溶劑，沒有特別限定，較佳為能夠將前述各成分均勻地溶解、混煉或分散的有機溶劑。例如可列舉出：二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯烷酮、丙酮、甲乙酮、環己酮等酮類溶劑、甲苯、二甲苯等。對塗布方法沒有特別限定。作為溶劑塗覆的方法，例如可列舉出：模塗機、凹版塗布機、輥塗機、逆轉塗布機、逗點塗布機、管狀刮刀塗布機(pipe doctor coater)、絲網印刷等。其中，從塗布厚度的均勻性高的角度來看，較佳為模塗機。 The solvent used in the adhesive composition solution is not particularly limited, but an organic solvent capable of uniformly dissolving, kneading, or dispersing the aforementioned components is preferred. For example, ketone solvents, such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, cyclohexanone, toluene, xylene, etc. are mentioned. The coating method is not particularly limited. Examples of solvent coating methods include die coaters, gravure coaters, roll coaters, reverse coaters, comma coaters, pipe doctor coaters, screen printing, and the like. Among them, from the viewpoint of high uniformity of coating thickness, a die coater is preferred.

作為基材隔膜，可以使用聚對苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯、通過氟系剝離劑、長鏈丙烯酸烷基酯類剝離劑等剝離劑進行了表面塗布的塑膠薄膜、紙等。作為接著劑組合物溶液的塗布方法，例如可列舉出：輥塗覆、絲網塗覆、凹版塗覆等。此外，對塗布膜的乾燥條件沒有特別限定，例如可以以乾燥溫度70~160℃、乾燥時間1~5分鐘進行。 As a base separator, you can use polyethylene terephthalate (PET), polyethylene, polypropylene, and plastic coated with a fluorine-based release agent, a long-chain alkyl acrylate release agent, and other release agents. Film, paper, etc. As a coating method of the adhesive composition solution, roll coating, screen coating, gravure coating, etc. are mentioned, for example. In addition, the drying conditions of the coating film are not particularly limited. For example, it can be performed at a drying temperature of 70 to 160° C. and a drying time of 1 to 5 minutes.

作為接著薄膜11的製造方法，例如用攪拌機將前述各成分混合並對所得混合物進行壓製成型來製造接著薄膜11的方法等也是適宜的。作為攪拌機，可列舉出行星攪拌機等。 As a method of manufacturing the adhesive film 11, for example, a method of mixing the aforementioned components with a stirrer and press-forming the resulting mixture to produce the adhesive film 11 is also suitable. As a mixer, a planetary mixer etc. are mentioned.

接著薄膜11的厚度較佳為2μm以上，更佳為5μm以上，進一步較佳為10μm以上。接著薄膜11的厚度較佳為200μm以下，更佳為150μm以下，進一步較佳為100μm以下。 The thickness of the film 11 is preferably 2 μm or more, more preferably 5 μm or more, and still more preferably 10 μm or more. The thickness of the film 11 is preferably 200 μm or less, more preferably 150 μm or less, and still more preferably 100 μm or less.

接著薄膜11用於製造半導體裝置。具體而言，接著薄膜11用於晶片接合用途。 The thin film 11 is then used to manufacture semiconductor devices. Specifically, the adhesive film 11 is used for wafer bonding applications.

(覆蓋膜13) (Cover film 13)

作為覆蓋膜13，可列舉出聚對苯二甲酸乙二醇酯(PET)薄膜等。覆蓋膜13較佳為實施了脫模處理的聚對苯二甲酸乙二醇酯薄膜。 As cover film 13, a polyethylene terephthalate (PET) film etc. are mentioned. The cover film 13 is preferably a polyethylene terephthalate film subjected to mold release treatment.

覆蓋膜13的厚度較佳為20μm~75μm，更佳為25μm~50μm。 The thickness of the cover film 13 is preferably 20 μm to 75 μm, more preferably 25 μm to 50 μm.

(半導體裝置的製造方法) (Method of manufacturing semiconductor device)

如圖3所示，將半導體晶圓4壓接於切割片一體型接著薄膜71。作為半導體晶圓4，可列舉出：矽晶圓、矽碳化物晶圓、化合物半導體晶圓等。作為化合物半導體晶圓，可列舉出氮化鎵晶圓等。 As shown in FIG. 3, the semiconductor wafer 4 is crimped to the dicing sheet-integrated adhesive film 71. Examples of the semiconductor wafer 4 include silicon wafers, silicon carbide wafers, compound semiconductor wafers, and the like. Examples of compound semiconductor wafers include gallium nitride wafers and the like.

作為壓接方法，例如可列舉出通過壓接輥等按壓手段進行按壓的方法等。 As the pressure bonding method, for example, a method of pressing by pressing means such as a pressure bonding roller or the like can be cited.

壓接溫度(黏貼溫度)較佳為35℃以上，更佳為37℃以上。壓接溫度的上限較低較佳，較佳為50℃以下，更佳為45℃以下。通過以低溫進行壓接，能夠防止對半 導體晶圓4的熱影響，能夠抑制半導體晶圓4的翹曲。此外，壓力較佳為1×105Pa~1×107Pa，更佳為2×105Pa~8×106Pa。 The crimping temperature (sticking temperature) is preferably 35°C or higher, more preferably 37°C or higher. The upper limit of the crimping temperature is preferably lower, preferably 50°C or lower, more preferably 45°C or lower. By performing pressure bonding at a low temperature, thermal influence on the semiconductor wafer 4 can be prevented, and warpage of the semiconductor wafer 4 can be suppressed. In addition, the pressure is preferably 1×10 5 Pa to 1×10 7 Pa, more preferably 2×10 5 Pa to 8×10 6 Pa.

如圖4所示，通過對半導體晶圓4進行切割而形成晶片接合用晶片5。晶片接合用晶片5包括半導體晶片41和配置在半導體晶片41上的薄膜狀接著劑111。半導體晶片41包括電極極板。作為電極極板的材料，可列舉出鋁等。本步驟中可以採用進行切入直至切割片一體型接著薄膜71的、被稱為全切的切斷方式等。作為切割裝置，沒有特別限定，可以使用現有公知的裝置。此外，由於半導體晶圓4被切割片一體型接著薄膜71接著固定，因此能夠抑制晶片缺損、晶片飛濺，並且還能夠抑制半導體晶圓4的破損。 As shown in FIG. 4, the semiconductor wafer 4 is diced to form the wafer 5 for die bonding. The wafer 5 for wafer bonding includes a semiconductor wafer 41 and a thin-film adhesive 111 arranged on the semiconductor wafer 41. The semiconductor wafer 41 includes electrode pads. As a material of the electrode pad, aluminum etc. can be mentioned. In this step, it is possible to use a cutting method called a full cut, which performs cutting until the sheet-integrated adhesive film 71 is cut. The cutting device is not particularly limited, and a conventionally known device can be used. In addition, since the semiconductor wafer 4 is subsequently fixed by the dicing sheet-integrated adhesive film 71, chip chipping and wafer spatter can be suppressed, and damage to the semiconductor wafer 4 can also be suppressed.

拾取晶片接合用晶片5。作為拾取的方法，沒有特別限定，可以採用現有公知的各種方法。例如可列舉出：從切割片一體型接著薄膜71側用針頂起各個半導體晶片41，接著通過拾取裝置拾取晶片接合用晶片5的方法等。 Pick up the wafer 5 for wafer bonding. The picking method is not particularly limited, and various conventionally known methods can be adopted. For example, a method of pushing each semiconductor wafer 41 with a needle from the side of the dicing sheet-integrated adhesive film 71, and then picking up the wafer bonding wafer 5 by a pick-up device, etc., etc. are mentioned.

如圖5所示，通過將晶片接合用晶片5壓接於被黏物6而得到帶半導體晶片的被黏物2。帶半導體晶片的被黏物2包括被黏物6、配置在被黏物6上的薄膜狀接著劑111以及配置在薄膜狀接著劑111上的半導體晶片41。被黏物6具備端子部。作為被黏物6，可列舉出：引線框、仲介層(interposer)、TAB薄膜、半導體晶片等。被黏物為引線框的情況下，端子部可以為內部引線。 As shown in FIG. 5, the adherend 2 with a semiconductor wafer is obtained by crimping the wafer 5 for die bonding to the adherend 6. The adherend 2 with a semiconductor wafer includes an adherend 6, a film-like adhesive 111 arranged on the adherend 6, and a semiconductor wafer 41 arranged on the film-like adhesive 111. The adherend 6 has a terminal part. Examples of the adherend 6 include lead frames, interposers, TAB films, and semiconductor wafers. When the adherend is a lead frame, the terminal part may be an inner lead.

將晶片接合用晶片5壓接於被黏物6的溫度(以下稱為“黏晶溫度”)較佳為80℃以上，更佳為90℃以上。此外，黏晶溫度較佳為150℃以下，更佳為130℃以下。 The temperature at which the die 5 for die bonding is crimped to the adherend 6 (hereinafter referred to as "die bonding temperature") is preferably 80°C or higher, more preferably 90°C or higher. In addition, the crystal bonding temperature is preferably 150°C or lower, more preferably 130°C or lower.

通過在加壓下對帶半導體晶片的被黏物2進行加熱，使薄膜狀接著劑111硬化。由此，使半導體晶片41固著在被黏物6上。通過在加壓下使薄膜狀接著劑111硬化，能夠消滅在薄膜狀接著劑111與黏物6之間存在的空隙，能夠確保薄膜狀接著劑111與被黏物6接觸的面積。 By heating the adherend 2 with the semiconductor wafer under pressure, the film-like adhesive 111 is cured. Thereby, the semiconductor wafer 41 is fixed to the adherend 6. By hardening the film-like adhesive 111 under pressure, the gap between the film-like adhesive 111 and the adherend 6 can be eliminated, and the contact area of the film-like adhesive 111 and the adherend 6 can be ensured.

作為在加壓下進行加熱的方法，例如可列舉出：對配置在填充有非活性氣體的腔室內的帶半導體晶片的被黏物2進行加熱的方法等。加壓環境的壓力較佳為0.5kg/cm2(4.9×10-2MPa)以上，更佳為1kg/cm2(9.8×10-2MPa)以上，進一步較佳為5kg/cm2(4.9×10-1MPa)以上。如果為0.5kg/cm2以上，則能夠容易地消滅在薄膜狀接著劑111與被黏物6之間存在的空隙。加壓環境的壓力較佳為20kg/cm2(1.96MPa)以下，更佳為18kg/cm2(1.77MPa)以下，進一步較佳為15kg/cm2(1.47MPa)以下。如果為20kg/cm2以下，則能夠抑制由過度的加壓導致的薄膜狀接著劑111的突出。 As a method of heating under pressure, for example, a method of heating the adherend 2 with a semiconductor wafer arranged in a chamber filled with an inert gas, and the like. The pressure of the pressurized environment is preferably 0.5 kg/cm 2 (4.9×10 -2 MPa) or more, more preferably 1 kg/cm 2 (9.8×10 -2 MPa) or more, and still more preferably 5 kg/cm 2 (4.9 ×10 -1 MPa) or more. If it is 0.5 kg/cm 2 or more, the void existing between the film-like adhesive 111 and the adherend 6 can be easily eliminated. The pressure is preferably ambient pressure 20kg / cm 2 (1.96MPa) or less, more preferably 18kg / cm 2 (1.77MPa) or less, more preferably 15kg / cm 2 (1.47MPa) or less. If it is 20 kg/cm 2 or less, the protrusion of the film-like adhesive 111 due to excessive pressure can be suppressed.

加熱溫度較佳為80℃以上，更佳為120℃以上，進一步較佳為150℃以上，特別佳為170℃以上。如果為80℃以上，則能夠使薄膜狀接著劑111為適度的硬度，能夠通過加壓硬化而有效地使空隙消失。加熱溫度較佳為260℃以下，更佳為200℃以下，更佳為180℃以下。如果為 260℃以下，則能夠防止薄膜狀接著劑111的分解。 The heating temperature is preferably 80°C or higher, more preferably 120°C or higher, still more preferably 150°C or higher, particularly preferably 170°C or higher. If it is 80° C. or higher, the film-like adhesive 111 can be made to have an appropriate hardness, and the voids can be effectively eliminated by press hardening. The heating temperature is preferably 260°C or lower, more preferably 200°C or lower, and even more preferably 180°C or lower. If If the temperature is below 260°C, the decomposition of the film adhesive 111 can be prevented.

加熱時間較佳為0.1小時以上，更佳為0.2小時以上。加熱時間較佳為24小時以下，更佳為3小時以下，進一步較佳為1小時以下，特別佳為30分以下。 The heating time is preferably 0.1 hour or more, more preferably 0.2 hour or more. The heating time is preferably 24 hours or less, more preferably 3 hours or less, still more preferably 1 hour or less, and particularly preferably 30 minutes or less.

如圖6所示，進行用接合引線7將半導體晶片41的電極極板與被黏物6的端子部電連接的引線接合步驟。作為接合引線7的材料，可列舉出銅等。 As shown in FIG. 6, a wire bonding step of electrically connecting the electrode pad of the semiconductor wafer 41 and the terminal portion of the adherend 6 with the bonding wire 7 is performed. As a material of the bonding wire 7, copper etc. are mentioned.

引線接合步驟包括將接合引線7的一端與半導體晶片41的電極極板接合的步驟、將接合引線7的另一端與被黏物6的端子部接合的步驟等。 The wire bonding step includes a step of bonding one end of the bonding wire 7 to the electrode pad of the semiconductor wafer 41, a step of bonding the other end of the bonding wire 7 to the terminal portion of the adherend 6, and the like.

進行了引線接合步驟後，進行通過封裝樹脂8對半導體晶片41進行封裝的封裝步驟。本步驟是為了保護搭載於被黏物6的半導體晶片41、接合引線7而進行的。本步驟通過用模具將封裝用的樹脂成型來進行。作為封裝樹脂8，例如使用環氧類的樹脂。樹脂封裝時的加熱溫度較佳為165℃以上，更佳為170℃以上，加熱溫度較佳為185℃以下，更佳為180℃以下。 After the wire bonding step is performed, a packaging step of packaging the semiconductor wafer 41 with the sealing resin 8 is performed. This step is performed to protect the semiconductor wafer 41 and the bonding wires 7 mounted on the adherend 6. This step is performed by molding the resin for packaging with a mold. As the sealing resin 8, an epoxy resin is used, for example. The heating temperature during resin encapsulation is preferably 165°C or higher, more preferably 170°C or higher, and the heating temperature is preferably 185°C or lower, and more preferably 180°C or lower.

可以根據需要而在封裝後進一步進行加熱(後硬化步驟)。由此，可以使在封裝步驟中硬化不足的封裝樹脂8完全硬化。加熱溫度可以適當設定。 If necessary, heating may be further performed after packaging (post-curing step). Thereby, it is possible to completely harden the encapsulating resin 8 that is insufficiently hardened in the encapsulating step. The heating temperature can be appropriately set.

通過以上方法而得到的半導體裝置包括被黏物6、配置在被黏物6上的接著層以及配置在接著層上的半導體晶片41。接著層通過薄膜狀接著劑111硬化而形成。半導體裝置另包括覆蓋半導體晶片41的封裝樹脂8。 The semiconductor device obtained by the above method includes an adherend 6, an adhesive layer arranged on the adherend 6, and a semiconductor wafer 41 arranged on the adhesive layer. The subsequent layer is formed by curing the film-like adhesive 111. The semiconductor device further includes an encapsulating resin 8 covering the semiconductor wafer 41.

如上所述，半導體裝置的製造方法包括下列步驟：準備切割晶片接合薄膜1的步驟；將半導體晶圓4壓接於切割片一體型接著薄膜71的接著薄膜11的步驟；在將半導體晶圓4壓接於接著薄膜11的步驟之後，通過進行晶片分割而形成晶片接合用晶片5的步驟；和將晶片接合用晶片5壓接於被黏物6的步驟。半導體裝置的製造方法另包括包含下列步驟的步驟：在將晶片接合用晶片5壓接於被黏物6的步驟之後，將接合引線7的一端與半導體晶片41的電極極板接合的步驟，將接合引線7的另一端與被黏物6的端子部接合的步驟。半導體裝置的製造方法另包括用封裝樹脂8對半導體晶片41進行封裝的步驟。 As described above, the method of manufacturing a semiconductor device includes the following steps: a step of preparing the die bonding film 1 for dicing; a step of crimping the semiconductor wafer 4 to the bonding film 11 of the dicing sheet-integrated bonding film 71; After the step of crimping the film 11, the step of forming the wafer 5 for die bonding by wafer division; and the step of crimping the wafer 5 for die bonding to the adherend 6. The method of manufacturing a semiconductor device further includes a step including the following steps: after the step of crimping the wafer bonding wafer 5 to the adherend 6, the step of bonding one end of the bonding wire 7 to the electrode pad of the semiconductor wafer 41, and The step of bonding the other end of the bonding wire 7 to the terminal portion of the adherend 6. The manufacturing method of the semiconductor device further includes a step of packaging the semiconductor wafer 41 with the packaging resin 8.

將半導體晶圓4壓接於接著薄膜11的步驟包括從覆蓋膜13剝離切割片一體型接著薄膜71的步驟。 The step of crimping the semiconductor wafer 4 to the adhesive film 11 includes a step of peeling the dicing sheet-integrated adhesive film 71 from the cover film 13.

(變形例1) (Modification 1)

黏合劑層122的接觸部122A具有通過輻射線而硬化的性質。黏合劑層122的周邊部122B也具有通過輻射線而硬化的性質。在半導體裝置的製造方法中，形成晶片接合用晶片5，對黏合劑層122照射紫外線，拾取晶片接合用晶片5。由此，由於黏合劑層122對晶片接合用晶片5的黏合力降低，因此能夠容易地拾取晶片接合用晶片5。 The contact portion 122A of the adhesive layer 122 has a property of being hardened by radiation. The peripheral portion 122B of the adhesive layer 122 also has a property of being hardened by radiation. In the method of manufacturing a semiconductor device, the wafer 5 for wafer bonding is formed, the adhesive layer 122 is irradiated with ultraviolet rays, and the wafer 5 for wafer bonding is picked up. Thereby, since the adhesive force of the adhesive layer 122 to the wafer 5 for die bonding is reduced, the wafer 5 for die bonding can be picked up easily.

(變形例2) (Modification 2)

黏合劑層122的接觸部122A通過輻射線而被硬化。 黏合劑層122的周邊部122B也通過輻射線而被硬化。 The contact portion 122A of the adhesive layer 122 is hardened by radiation. The peripheral portion 122B of the adhesive layer 122 is also hardened by radiation.

(變形例3) (Modification 3)

接著薄膜11為包括第1層和配置在第1層上的第2層的多層形狀。 Next, the film 11 has a multilayer shape including a first layer and a second layer arranged on the first layer.

(變形例4) (Modification 4)

如圖7所示，切割片12的黏合面整體與接著薄膜11接觸。黏合劑層122較佳具有通過輻射線而硬化的性質。在半導體裝置的製造方法中，形成晶片接合用晶片5，對黏合劑層122照射紫外線，拾取晶片接合用晶片5。由此，由於黏合劑層122對晶片接合用晶片5的黏合力降低，因此能夠容易地拾取晶片接合用晶片5。 As shown in FIG. 7, the entire adhesive surface of the dicing sheet 12 is in contact with the adhesive film 11. The adhesive layer 122 preferably has a property of being hardened by radiation. In the method of manufacturing a semiconductor device, the wafer 5 for wafer bonding is formed, the adhesive layer 122 is irradiated with ultraviolet rays, and the wafer 5 for wafer bonding is picked up. Thereby, since the adhesive force of the adhesive layer 122 to the wafer 5 for die bonding is reduced, the wafer 5 for die bonding can be picked up easily.

(變形例5) (Modification 5)

基材層121為單層形狀。 The base layer 121 has a single-layer shape.

(變形例6) (Modification 6)

形成晶片接合用晶片5的步驟包括通過擴展對配置在切割片一體型接著薄膜71上的半導體晶圓4進行分割的階段。例如，形成晶片接合用晶片5的步驟包括通過對配置在切割片一體型接著薄膜71上的半導體晶圓4照射雷射而在半導體晶圓4的內部形成脆弱層的步驟。此時，形成晶片接合用晶片5的步驟另包括在形成脆弱層的步驟之 後進行擴展的步驟。通過擴展而同時對接著薄膜11和半導體晶圓4進行分割。 The step of forming the wafer 5 for die bonding includes a step of dividing the semiconductor wafer 4 arranged on the dicing sheet-integrated adhesive film 71 by expansion. For example, the step of forming the wafer 5 for die bonding includes a step of forming a fragile layer inside the semiconductor wafer 4 by irradiating the semiconductor wafer 4 arranged on the dicing sheet-integrated adhesive film 71 with a laser. At this time, the step of forming the wafer 5 for wafer bonding further includes one of the steps of forming a fragile layer Then proceed to the expansion step. The adhesive film 11 and the semiconductor wafer 4 are simultaneously divided by expansion.

(變形例7) (Modification 7)

如圖8所示，半導體裝置的製造方法包括下列步驟：將半導體晶圓4壓接於接著薄膜11的步驟；在將半導體晶圓4壓接於接著薄膜11的步驟之後，通過進行晶片分割而形成晶片接合用晶片5的步驟；和將晶片接合用晶片5壓接於被黏物61的步驟。具體而言，將晶片接合用晶片5壓接於被黏物61的步驟是將晶片接合用晶片5壓接於被黏物61的半導體晶片641的步驟。被黏物61包括基板606、半導體晶片641以及連接半導體晶片641與基板606的接合引線607。更具體而言，被黏物61包括基板606、配置在基板606上的接著層611、配置在接著層611上的半導體晶片641以及連接半導體晶片641與基板606的接合引線607。接合引線607具有埋在薄膜狀接著劑111中的部分。 As shown in FIG. 8, the method of manufacturing a semiconductor device includes the following steps: a step of crimping the semiconductor wafer 4 to the adhesive film 11; after the step of crimping the semiconductor wafer 4 to the adhesive film 11, the wafer is divided The step of forming the wafer 5 for wafer bonding; and the step of crimping the wafer 5 for wafer bonding to the adherend 61. Specifically, the step of crimping the wafer 5 for die bonding to the adherend 61 is a step of crimping the wafer 5 for die bonding to the semiconductor wafer 641 of the adherend 61. The adherend 61 includes a substrate 606, a semiconductor chip 641 and bonding wires 607 connecting the semiconductor chip 641 and the substrate 606. More specifically, the adherend 61 includes a substrate 606, an adhesive layer 611 arranged on the substrate 606, a semiconductor wafer 641 arranged on the adhesive layer 611, and bonding wires 607 connecting the semiconductor wafer 641 and the substrate 606. The bonding wire 607 has a portion buried in the film-like adhesive 111.

(變形例8) (Modification 8)

如圖9所示，將晶片接合用晶片5壓接於被黏物61的步驟是將晶片接合用晶片5壓接於被黏物61的基板606的步驟。接合引線607包括埋在薄膜狀接著劑111中的兩端。 As shown in FIG. 9, the step of crimping the wafer 5 for die bonding to the adherend 61 is a step of crimping the wafer 5 for die bonding to the substrate 606 of the adherend 61. The bonding wire 607 includes both ends buried in the film-like adhesive 111.

(其他變形例) (Other modifications)

變形例1~變形例8等可以任意組合。 Modifications 1 to 8, etc. can be combined arbitrarily.

實施例 Example

以下對本發明使用實施例進行詳細說明，但本發明在不超出其要旨的情況下，並不限於以下實施例。 Hereinafter, the embodiments of the present invention will be described in detail, but the present invention is not limited to the following embodiments as long as it does not exceed the gist.

[1.切割片一體型接著薄膜的製作] [1. Production of cutting sheet integrated adhesive film]

製得切割片一體型接著薄膜A~E。如圖10所示，切割片一體型接著薄膜A~E具有切割片9和配置在切割片9上的接著薄膜3。切割片9具有基材91和配置在基材91上的黏合劑層92。基材91具有第1基材911和配置在第1基材911上的第2基材912。第2基材912具有第2面912b。接著薄膜A具有第2主面3b。 A dicing integrated adhesive film A~E was produced. As shown in FIG. 10, the dicing sheet-integrated adhesive films A to E have a dicing sheet 9 and an adhesive film 3 arranged on the dicing sheet 9. The dicing sheet 9 has a base material 91 and an adhesive layer 92 arranged on the base material 91. The base material 91 has a first base material 911 and a second base material 912 arranged on the first base material 911. The second substrate 912 has a second surface 912b. Next, the film A has a second main surface 3b.

(1)接著薄膜的製作 (1) Production of adhesive film

對為了製作接著薄膜而使用的成分進行說明。 The components used to produce the adhesive film will be described.

丙烯酸類樹脂：Nagase ChemteX Corporation製造的Teisan Resin WS023-EK30(具有羥基和羧基的丙烯酸酯共聚物、Mw：50萬、玻璃化轉變溫度：-10℃) Acrylic resin: Teisan Resin WS023-EK30 manufactured by Nagase ChemteX Corporation (acrylate copolymer with hydroxyl and carboxyl groups, Mw: 500,000, glass transition temperature: -10°C)

環氧樹脂1：三菱化學股份有限公司製造的jER1001(固態環氧樹脂、環氧當量450g/eq.~500g/eq.) Epoxy resin 1: jER1001 manufactured by Mitsubishi Chemical Corporation (solid epoxy resin, epoxy equivalent 450g/eq.~500g/eq.)

環氧樹脂2：三菱化學股份有限公司製造的jER828(液態環氧樹脂、環氧當量180g/eq.) Epoxy resin 2: jER828 manufactured by Mitsubishi Chemical Corporation (liquid epoxy resin, epoxy equivalent 180g/eq.)

酚醛樹脂1：明和化成股份有限公司製造的MEH-7851(酚醛樹脂、羥基當量201~220g/eq.) Phenolic resin 1: MEH-7851 manufactured by Minghe Chemical Co., Ltd. (phenolic resin, hydroxyl equivalent 201~220g/eq.)

球狀二氧化矽：Admatechs Co.,Ltd.製造的SO-25R(平均粒徑0.5μm的球狀二氧化矽) Spherical silicon dioxide: SO-25R manufactured by Admatechs Co., Ltd. (spherical silicon dioxide with an average particle size of 0.5μm)

導電性高分子：綜研化學股份有限公司製造的WED-S Conductive polymer: WED-S manufactured by Soken Chemical Co., Ltd.

按照表1記載的調配比將各成分溶解於甲乙酮，製得固體成分濃度20重量%的接著劑組合物溶液。在厚度50μm的隔膜(進行了有機矽脫模處理的PET薄膜)上塗布接著劑組合物溶液，用130℃的烘箱乾燥2分鐘，製得厚度20pm的接著薄膜A~C。 Each component was dissolved in methyl ethyl ketone according to the compounding ratio described in Table 1 to prepare an adhesive composition solution with a solid content concentration of 20% by weight. The adhesive composition solution was applied on a separator with a thickness of 50 μm (a PET film subjected to a silicone release treatment), and dried in an oven at 130° C. for 2 minutes to obtain adhesive films A to C with a thickness of 20 μm.

Figure 105116458-A0202-12-0026-1
Figure 105116458-A0202-12-0026-1

(2)黏合劑層的製作 (2) Making the adhesive layer

接著，向具備冷凝管、氮氣導入管、溫度計和攪拌裝置的反應容器中投入丙烯酸-2-乙基己酯(以下稱為“2EHA”)100份、丙烯酸-2-羥基乙酯(以下稱為“HEA”)10份、過氧化苯甲醯0.3份和甲苯80份，在氮氣氣流中 以60℃進行8小時聚合處理，得到丙烯酸類聚合物A。向該丙烯酸類聚合物A中加入2-甲基丙烯醯氧基乙基異氰酸酯(以下稱為“MOI”)5份，在空氣氣流中以50℃進行50小時的加成反應處理，得到丙烯酸類聚合物A’。 Next, 100 parts of 2-ethylhexyl acrylate (hereinafter referred to as "2EHA") and 2-hydroxyethyl acrylate (hereinafter referred to as "HEA") 10 parts, 0.3 parts of benzyl peroxide and 80 parts of toluene in a nitrogen stream The polymerization treatment was carried out at 60°C for 8 hours to obtain acrylic polymer A. To the acrylic polymer A, 5 parts of 2-methacryloxyethyl isocyanate (hereinafter referred to as "MOI") was added, and the addition reaction was performed at 50°C for 50 hours in an air stream to obtain acrylic Polymer A'.

接著，相對於丙烯酸類聚合物A’100份，加入多異氰酸酯化合物(商品名“CORONATE L”、日本聚氨酯股份有限公司製造)5份和光聚合引發劑(商品名“IRGACURE 184”、Ciba Specialty Chemicals Inc.製造)5份，製得黏合劑溶液。將黏合劑溶液塗布於PET剝離襯墊的實施了有機矽處理的面上，在120℃下加熱乾燥2分鐘，形成厚度30μm的黏合劑層。 Next, 5 parts of a polyisocyanate compound (trade name "CORONATE L", manufactured by Nippon Polyurethane Co., Ltd.) and a photopolymerization initiator (trade name "IRGACURE 184", Ciba Specialty Chemicals Inc.) were added to 100 parts of acrylic polymer A'. . Manufacturing) 5 parts to prepare the adhesive solution. The adhesive solution was applied to the silicone-treated surface of the PET release liner, and heated and dried at 120°C for 2 minutes to form an adhesive layer with a thickness of 30 μm.

(3)實施例1中的切割片一體型接著薄膜A的製作 (3) Production of dicing sheet-integrated adhesive film A in Example 1

第1基材911為厚度50μm的聚丙烯製的基材。第2基材912為相對於聚乙烯100重量份含有20重量份綜研化學股份有限公司製造的WED-S的基材。第2基材912的厚度為30μm。 The first substrate 911 is a polypropylene substrate with a thickness of 50 μm. The second base material 912 is a base material containing 20 parts by weight of WED-S manufactured by Soken Chemical Co., Ltd. with respect to 100 parts by weight of polyethylene. The thickness of the second base 912 is 30 μm.

將黏合劑層與第1基材911貼合，在23℃下保存72小時。使用紫外線照射裝置(日東精機股份有限公司製造的UM-810)，隔著基材91對“黏合劑層中的搭載半導體晶圓的區域”照射500mJ/cm2的紫外線，由此形成切割片9。 The adhesive layer and the first substrate 911 were bonded together and stored at 23°C for 72 hours. Using an ultraviolet irradiation device (UM-810 manufactured by Nitto Seiki Co., Ltd.), 500 mJ/cm 2 of ultraviolet rays were irradiated to the "area where the semiconductor wafer is mounted in the adhesive layer" through the substrate 91, thereby forming the dicing sheet 9 .

通過使用手壓輥將接著薄膜A與切割片9貼合，製得切割片一體型接著薄膜A。 The adhesive film A and the dicing sheet 9 were bonded together by using a hand roller to produce the dicing sheet-integrated adhesive film A.

(4)實施例2中的切割片一體型接著薄膜B的製作 (4) Production of dicing sheet integrated adhesive film B in Example 2

第1基材911為厚度80μm的聚丙烯製的基材。第2基材912為相對於乙烯-乙酸乙烯酯共聚物100重量份含有20重量份股份有限公司T & K TOKA製造的PA-200(導電性高分子)的基材。第2基材912的厚度為10μm。 The first substrate 911 is a polypropylene substrate with a thickness of 80 μm. The second base material 912 is a base material containing 20 parts by weight of PA-200 (conductive polymer) manufactured by T & K TOKA Co., Ltd. with respect to 100 parts by weight of the ethylene-vinyl acetate copolymer. The thickness of the second substrate 912 is 10 μm.

將黏合劑層與第1基材911貼合，在23℃下保存72小時。使用紫外線照射裝置(日東精機股份有限公司製造的UM-810)，隔著基材91對“黏合劑層中的搭載半導體晶圓的區域”照射500mJ/cm2的紫外線，由此形成切割片9。 The adhesive layer and the first substrate 911 were bonded together and stored at 23°C for 72 hours. Using an ultraviolet irradiation device (UM-810 manufactured by Nitto Seiki Co., Ltd.), 500 mJ/cm 2 of ultraviolet rays were irradiated to the "area where the semiconductor wafer is mounted in the adhesive layer" through the substrate 91, thereby forming the dicing sheet 9 .

通過使用手壓輥將接著薄膜B與切割片9貼合，製得切割片一體型接著薄膜B。 The adhesive film B and the dicing sheet 9 were bonded by using a hand roller to produce an adhesive film B integrated with a dicing sheet.

(5)實施例3中的切割片一體型接著薄膜C的製作 (5) Production of the dicing sheet-integrated adhesive film C in Example 3

第1基材911為厚度50μm的乙烯-乙酸乙烯酯共聚物製的基材。第2基材912為相對於聚乙烯100重量份含有30重量份股份有限公司T & K TOKA製造的PA-200的基材。第2基材912的厚度為30μm。 The first substrate 911 is a substrate made of ethylene-vinyl acetate copolymer with a thickness of 50 μm. The second base material 912 is a base material containing 30 parts by weight of PA-200 manufactured by T & K TOKA Co., Ltd. with respect to 100 parts by weight of polyethylene. The thickness of the second base 912 is 30 μm.

將黏合劑層與第1基材911貼合，在23℃下保存72小時。使用紫外線照射裝置(日東精機股份有限公司製造的UM-810)，隔著基材91對“黏合劑層中的搭載半導體晶圓的區域”照射500mJ/cm2的紫外線，由此形成切割片 9。 The adhesive layer and the first substrate 911 were bonded together and stored at 23°C for 72 hours. Using an ultraviolet irradiation device (UM-810 manufactured by Nitto Seiki Co., Ltd.), 500 mJ/cm 2 of ultraviolet rays were irradiated to the "area where the semiconductor wafer is mounted in the adhesive layer" through the substrate 91, thereby forming the dicing sheet 9 .

通過使用手壓輥將接著薄膜A與切割片9貼合，製得切割片一體型接著薄膜C。 The adhesive film A and the dicing sheet 9 were bonded together by using a hand roller to produce a dicing sheet-integrated adhesive film C.

(6)比較例1中的切割片一體型接著薄膜D的製作 (6) Production of dicing sheet integrated adhesive film D in Comparative Example 1

第1基材911為厚度50μm的聚丙烯製的基材。第2基材912為厚度30μm的聚乙烯製的基材。 The first substrate 911 is a polypropylene substrate with a thickness of 50 μm. The second substrate 912 is a polyethylene substrate with a thickness of 30 μm.

將黏合劑層與第1基材911貼合，在23℃下保存72小時。使用紫外線照射裝置(日東精機股份有限公司製造的UM-810)，隔著基材91對“黏合劑層中的搭載半導體晶圓的區域”照射500mJ/cm2的紫外線，由此形成切割片9。 The adhesive layer and the first substrate 911 were bonded together and stored at 23°C for 72 hours. Using an ultraviolet irradiation device (UM-810 manufactured by Nitto Seiki Co., Ltd.), 500 mJ/cm 2 of ultraviolet rays were irradiated to the "area where the semiconductor wafer is mounted in the adhesive layer" through the substrate 91, thereby forming the dicing sheet 9 .

通過使用手壓輥將接著薄膜C與切割片9貼合，製得切割片一體型接著薄膜D。 The adhesive film C and the dicing sheet 9 were bonded together by using a hand roller to produce a dicing sheet-integrated adhesive film D.

(7)比較例2中的切割片一體型接著薄膜E的製作 (7) Production of dicing sheet integrated adhesive film E in Comparative Example 2

第1基材911為相對於聚乙烯100重量份含有20重量份綜研化學股份有限公司製造的WED-S的基材。第1基材911的厚度為50μm。第2基材912為厚度30μm的聚丙烯製的基材。 The first substrate 911 is a substrate containing 20 parts by weight of WED-S manufactured by Soken Chemical Co., Ltd. with respect to 100 parts by weight of polyethylene. The thickness of the first base 911 is 50 μm. The second substrate 912 is a polypropylene substrate with a thickness of 30 μm.

將黏合劑層與第1基材911貼合，在23℃下保存72小時。使用紫外線照射裝置(日東精機股份有限公司製造的UM-810)，隔著基材91對“黏合劑層中的搭載半導體晶圓的區域”照射500mJ/cm2的紫外線，由此形成切割片 9。 The adhesive layer and the first substrate 911 were bonded together and stored at 23°C for 72 hours. Using an ultraviolet irradiation device (UM-810 manufactured by Nitto Seiki Co., Ltd.), 500 mJ/cm 2 of ultraviolet rays were irradiated to the "area where the semiconductor wafer is mounted in the adhesive layer" through the substrate 91, thereby forming the dicing sheet 9 .

通過使用手壓輥將接著薄膜A與切割片9貼合，製得切割片一體型接著薄膜E。 The adhesive film A and the dicing sheet 9 were bonded together by using a hand roller to produce a dicing sheet-integrated adhesive film E.

[2.評價] [2. Evaluation]

對切割片一體型接著薄膜A~E進行以下評價。結果示於表2。 The following evaluations were performed on the dicing sheet-integrated adhesive films A to E. The results are shown in Table 2.

(1)第2面912b的表面電阻值 (1) Surface resistance value of the second surface 912b

使用Advantest Corporation製造的超高阻表TR-8601的超高電阻測定用試樣箱TR-42。在23±2℃、50±5%環境下將切割片一體型接著薄膜靜置2小時後，在該環境下對第2面912b給予施加電壓500V，讀取自施加開始1分鐘後的數值。根據用施加電壓除以表面電流而得到的數值求出表面電阻值。 The sample box TR-42 for ultra-high resistance measurement of the ultra-high resistance meter TR-8601 manufactured by Advantest Corporation was used. After allowing the dicing sheet integrated adhesive film to stand for 2 hours in an environment of 23±2°C and 50±5%, a voltage of 500V was applied to the second surface 912b in this environment, and the value was read 1 minute after the start of application. The surface resistance value was obtained from the value obtained by dividing the applied voltage by the surface current.

(2)斷裂伸長率 (2) Elongation at break

從切割片9切出初始長度120mm、寬度10mm的長條狀的樣品，以卡盤間距50mm、拉伸速度300mm/min進行拉伸試驗，由此測定樣品的伸長率的變化量(mm)。作為拉伸試驗器，使用股份有限公司島津製作所製造的Autograph AG-IS，作為負荷感測器，使用股份有限公司島津製作所製造的PFG-50NA。 A strip-shaped sample with an initial length of 120 mm and a width of 10 mm was cut out from the dicing sheet 9, and a tensile test was performed at a chuck distance of 50 mm and a tensile speed of 300 mm/min to measure the change in elongation (mm) of the sample. As the tensile tester, Autograph AG-IS manufactured by Shimadzu Corporation was used, and as the load sensor, PFG-50NA manufactured by Shimadzu Corporation was used.

(3)覆蓋膜剝離試驗 (3) Cover film peeling test

在覆蓋膜上黏貼200張切割片一體型接著薄膜，捲成卷狀，使用晶圓安裝裝置MA-3000III(日東精機股份有限公司製造)進行晶圓貼合試驗。從10張切割片一體型接著薄膜剝離覆蓋膜，將在10張切割片一體型接著薄膜中全部成功剝離覆蓋膜的情況判定為○，將有1張以上未能剝離的情況判定為×。 200 pieces of dicing sheet-integrated adhesive film were pasted on the cover film, rolled into a roll, and wafer bonding test was performed using the wafer mounting device MA-3000III (manufactured by Nitto Seiki Co., Ltd.). The cover film was peeled off from the 10 dicing sheet-integrated adhesive films, and the case where all of the 10 dicing sheet-integrated adhesive films successfully peeled off the cover film was judged as ○, and the case where one or more sheets could not be peeled was judged as ×.

(4)切割後的飛散狀況 (4) Scattering condition after cutting

在切割片一體型接著薄膜上，用晶圓安裝裝置(MA-3000III、日東精機股份有限公司製造)在60℃下以10mm/sec的速度貼合12英吋、500μm厚的鏡面晶圓。然後，用切割裝置(DFD6361、DISCO Corporation製造)切割成10mm×10mm的晶片尺寸(單切、刀片高度90μm、速度50mm/sec)。用SEM分析在晶片上是否附著有導電性成分。將導電性成分未附著在晶片上的情況判定為○，將導電性成分附著在晶片上的情況判定為×。 On the dicing sheet-integrated adhesive film, a 12-inch, 500-μm-thick mirror wafer was bonded with a wafer mounting device (MA-3000III, manufactured by Nitto Seiki Co., Ltd.) at a speed of 10mm/sec at 60°C. Then, it was cut into a wafer size of 10 mm×10 mm (single cut, blade height 90 μm, speed 50 mm/sec) with a dicing device (DFD6361, manufactured by DISCO Corporation). SEM was used to analyze whether conductive components were attached to the wafer. The case where the conductive component was not attached to the wafer was judged as ○, and the case where the conductive component was attached to the wafer was judged as ×.

(5)第2主面3b的表面電阻值 (5) Surface resistance value of the second main surface 3b

使用Advantest Corporation製造的超高阻表TR-8601的超高電阻測定用試樣箱TR-42。在23±2℃、50±5%環境下將切割片一體型接著薄膜靜置2小時後，在該環境下對第2主面3b給予施加電壓500V，讀取自施加開始1分鐘後的數值。根據用施加電壓除以表面電流得到的數值求出 表面電阻值。 The sample box TR-42 for ultra-high resistance measurement of the ultra-high resistance meter TR-8601 manufactured by Advantest Corporation was used. After leaving the dicing sheet-integrated adhesive film at 23±2°C and 50±5% for 2 hours, apply a voltage of 500V to the second main surface 3b under this environment, and read the value 1 minute after the start of application . Calculate from the value obtained by dividing the applied voltage by the surface current Surface resistance value.

(6)黏著強度 (6) Adhesion strength

將直徑5.0mm的探頭以25℃、加壓條件100gf、加壓時間1秒按壓於接著薄膜，測定探頭以測試速度120mm/min從接著薄膜離開時的荷重。 A probe with a diameter of 5.0 mm was pressed on the adhesive film at 25° C., pressing conditions of 100 gf, and a pressing time of 1 second, and the load when the probe was separated from the adhesive film at a test speed of 120 mm/min was measured.

Figure 105116458-A0202-12-0033-2
Figure 105116458-A0202-12-0033-2

1:切割晶片接合薄膜 1: Cutting wafer bonding film

13:覆蓋膜 13: Cover film

71a、71b、71c、71m:切割片一體型接著薄膜 71a, 71b, 71c, 71m: cutting sheet integrated adhesive film

Claims (10)

一種切割晶片接合薄膜，其形成為卷狀，其包含：覆蓋膜，及配置在前述覆蓋膜上的切割片一體型接著薄膜，前述切割片一體型接著薄膜包含：切割片，前述切割片包含以第1面及與前述第1面相反側的第2面來定義兩面的基材層及與前述第1面接觸的黏合劑層；以及接著薄膜，前述接著薄膜以與前述黏合劑層接觸的第1主面及與前述第1主面相反側的第2主面來定義兩面，前述第2面的表面電阻值為1.0×1011Ω/sq.以下，前述第2主面的表面電阻值為1.0×1012Ω/sq.以上且1.0×1017Ω/sq.以下。 A dicing wafer bonding film formed in a roll shape, comprising: a cover film, and a dicing sheet-integrated adhesive film disposed on the cover film. The dicing sheet-integrated adhesive film includes: a dicing sheet, and the dicing sheet includes The first surface and the second surface opposite to the first surface define the substrate layer on both sides and the adhesive layer in contact with the first surface; and the adhesive film, the adhesive film being in contact with the adhesive layer 1 The main surface and the second main surface opposite to the first main surface define both surfaces. The surface resistance value of the second surface is 1.0×10 11 Ω/sq. or less, and the surface resistance value of the second main surface is 1.0×10 12 Ω/sq. or more and 1.0×10 17 Ω/sq. or less. 如請求項1的切割晶片接合薄膜，其中，前述基材層包含具有前述第1面的第1基材層及具有前述第2面的第2基材層，前述第2基材層包含導電性成分。 The dicing wafer bonding film according to claim 1, wherein the substrate layer includes a first substrate layer having the first surface and a second substrate layer having the second surface, and the second substrate layer includes conductive ingredient. 如請求項2的切割晶片接合薄膜，其中，前述第2基材層的厚度為1μm~30μm。 The dicing wafer bonding film according to claim 2, wherein the thickness of the second base material layer is 1 μm to 30 μm. 如請求項2的切割晶片接合薄膜，其中，前述導電性成分為有機系導電性成分。 The dicing wafer bonding film according to claim 2, wherein the conductive component is an organic conductive component. 如請求項2的切割晶片接合薄膜，其中，前述第2基材層另包含選自由聚乙烯、聚丙烯、乙烯乙酸乙烯酯共 聚物組成的群組中的1種以上的樹脂。 The dicing wafer bonding film according to claim 2, wherein the second substrate layer further comprises a total of polyethylene, polypropylene, and ethylene vinyl acetate. One or more resins in the group consisting of polymers. 如請求項1的切割晶片接合薄膜，其中，前述切割片的斷裂伸長率為500%以上。 The dicing wafer bonding film according to claim 1, wherein the elongation at break of the dicing sheet is 500% or more. 如請求項1的切割晶片接合薄膜，其中，前述接著薄膜包含：環氧樹脂或酚醛樹脂；以及丙烯酸類樹脂，前述接著薄膜在25℃的黏著強度為0.2N以上且3.0N以下。 The dicing die bonding film according to claim 1, wherein the adhesive film includes epoxy resin or phenol resin; and acrylic resin, and the adhesive strength of the adhesive film at 25° C. is 0.2N or more and 3.0N or less. 如請求項1的切割晶片接合薄膜，其中，前述覆蓋膜為聚對苯二甲酸乙二醇酯薄膜，前述覆蓋膜的厚度為20μm~75μm。 The dicing wafer bonding film according to claim 1, wherein the cover film is a polyethylene terephthalate film, and the thickness of the cover film is 20 μm to 75 μm. 一種半導體裝置的製造方法，其包括下列步驟：準備如請求項1~8中任一項的切割晶片接合薄膜的步驟；將半導體晶圓壓接於前述切割片一體型接著薄膜的前述接著薄膜的步驟；在將前述半導體晶圓壓接於前述接著薄膜的步驟之後，藉由進行晶片分割而形成包含半導體晶片及配置在前述半導體晶片上的薄膜狀接著劑的晶片接合用晶片的步驟；及將前述晶片接合用晶片壓接於被黏物的步驟，將前述半導體晶圓壓接於前述接著薄膜的步驟包括從前述覆蓋膜剝離前述切割片一體型接著薄膜的步驟。 A method of manufacturing a semiconductor device, comprising the following steps: preparing a dicing wafer bonding film as in any one of claims 1 to 8; crimping a semiconductor wafer to the bonding film of the dicing sheet integrated bonding film Step; after the step of crimping the semiconductor wafer to the adhesive film, the step of forming a wafer for wafer bonding including a semiconductor wafer and a film-like adhesive disposed on the semiconductor wafer by performing wafer division; and The step of crimping the wafer for die bonding to an adherend, and the step of crimping the semiconductor wafer to the adhesive film includes a step of peeling the dicing sheet-integrated adhesive film from the cover film. 一種半導體裝置，其是藉由如請求項9的製造方法而得到的。 A semiconductor device obtained by the manufacturing method as claimed in claim 9.
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