TW201430095A - Dicing tape integrated adhesive sheet, method of manufacturing semiconductor device using dicing tape integrated adhesive sheet, and semiconductor device - Google Patents

Abstract

A dicing tape integrated adhesive sheet including a substrate, a dicing tape in which a pressure-sensitive adhesive layer is laminated on the substrate, and an adhesive sheet formed on the pressure-sensitive adhesive layer, wherein a peeling force between the pressure-sensitive adhesive layer and the adhesive sheet is 0.02 to 0.5 N/20 mm obtained with a peeling test at a peeling rate of 10 m/minute and a peeling angle of 150 DEG , and an absolute value of a peeling electrification voltage is 0.5 kV or less when the pressure-sensitive adhesive layer and the adhesive sheet are peeled off under conditions of the peeling test.

Description

Cutting strip integrated type bonding sheet, manufacturing method of semiconductor device using dicing tape integrated type bonding sheet, and semiconductor device

The present invention relates to a dicing tape-integrated sheet, a method of manufacturing a semiconductor device using the dicing tape-integrated sheet, and a semiconductor device.

In recent years, the semiconductor device and its package have been required to be thinner and smaller. Therefore, as a semiconductor device and a package thereof, a flip-chip type semiconductor device obtained by flip-chip bonding (flip-chip bonding) of a semiconductor element such as a semiconductor wafer is widely used. The flip chip connection is performed such that the circuit surface of the semiconductor wafer faces the electrode forming surface of the substrate. In such a semiconductor device or the like, there is a case where the back surface of the semiconductor wafer is protected by a protective film to prevent damage of the semiconductor wafer or the like.

In the above-mentioned protective film, a film for a diced tape-integrated semiconductor back surface in which a film for flip chip type semiconductor back surface is used as a protective film is laminated on a dicing tape (see, for example, Patent Document 1). In the manufacturing process of the semiconductor device using the film for the dicing tape-integrated semiconductor back surface, first, the semiconductor wafer is attached and fixed to the film for flip chip type semiconductor back surface of the film for dicing tape-integrated semiconductor back surface, Cutting is performed in this state. Thereby, the semiconductor wafer is singulated into a specific size to become a semiconductor wafer. Then, the semiconductor wafer is picked up, and the semiconductor wafer fixed to the film for dicing tape-integrated semiconductor back surface is peeled off from the dicing film together with the film for flip-chip type semiconductor back surface.

Further, in the manufacture of a semiconductor device, in addition to the film for flip chip type semiconductor back surface, there is also a die-bond film or a bottom layer which is used for, for example, a dicing tape. A case where a diced tape-integrated type of sheet is formed by filling an underfill sheet or the like. The die-bonding film is a film for bonding a semiconductor wafer to an adherend, and the underfill sheet is used for sealing between a circuit surface of a semiconductor wafer in a flip-chip type semiconductor device and an electrode forming surface of the substrate. The sheet.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-228496

However, in the case of manufacturing a semiconductor device using the above-described dicing tape-integrated bonding sheet, there has previously been a case where a circuit formed on a semiconductor element (for example, a semiconductor wafer) is broken.

The inventors of the present invention have studied the cause of the destruction of the circuit on the semiconductor element. As a result, it was found that in the pick-up step, when the semiconductor element to which the adhesive sheet (for example, the film for flip chip type semiconductor back surface, the adhesive film, and the underfill sheet) is attached is peeled off from the dicing tape, there are the following cases: Stripping static electricity is generated between the sheet and the dicing tape, and the generated static electricity causes the circuit on the semiconductor element to be broken.

The present inventors have conducted research to solve the above-mentioned problems, and as a result, found that the peeling force of the adhesive layer of the dicing tape and the subsequent sheet is set within a certain range, and the peeling static voltage is peeled off. The absolute value is set within a certain range, whereby the circuit on the semiconductor element is suppressed from being destroyed, thereby completing the first invention.

That is, the first aspect of the invention is characterized in that it comprises a dicing tape in which an adhesive layer is laminated on a substrate, and a dicing tape-integrated lining sheet of a subsequent sheet formed on the adhesive layer, and In the peeling test at a peeling speed of 10 m/min and a peeling angle of 150°, the above adhesive The peeling force of the layer and the above-mentioned succeeding sheet was 0.02 to 0.5 N/20 mm, and the absolute value of the peeling static voltage when the adhesive layer was peeled off from the adhesive sheet was 0.5 kV or less according to the conditions of the peeling test.

According to the above configuration, in the peeling test at a peeling speed of 10 m/min and a peeling angle of 150°, the peeling force of the adhesive layer and the adhesive sheet was 0.02 to 0.5 N/20 mm. Since the peeling force is 0.02 N/20 mm or more, the semiconductor wafer can be fixed at the time of dicing. Moreover, since the peeling force is 0.5 N/20 mm or less, the semiconductor element attached to the sheet can be easily peeled off from the adhesive layer at the time of picking up. Moreover, since the absolute value of the peeling static voltage when the adhesive layer and the adhesive sheet are peeled off is 0.5 kV or less according to the conditions of the peeling test, an antistatic effect can be exhibited. As a result, it is possible to prevent the semiconductor element from being broken due to the peeling of static electricity at the time of picking up, and the reliability as a device is improved.

In the above configuration, it is preferable that the adhesive sheet is a film for flip chip type semiconductor back surface formed on the back surface of a semiconductor element in which a flip chip is connected to an adherend. In the case where the subsequent sheet is a film for flip chip type semiconductor back surface, the film for flip chip type semiconductor back surface is formed on the back surface of the semiconductor element, and the circuit surface of the semiconductor element is exposed. However, according to the conditions of the peeling test, the absolute value of the peeling static voltage when the adhesive layer was peeled off from the adhesive sheet was 0.5 kV or less. As a result, it is possible to prevent the circuit surface of the bare semiconductor element from being broken by peeling off static electricity.

In the above configuration, it is preferred that the substrate contains an antistatic agent. After the dicing, when the dicing tape is removed from the adsorption stage of the fixed dicing tape, there is a case where the static electricity is peeled off between the dicing tape and the adsorption stage. Therefore, when an antistatic agent is contained in a base material, it can suppress the discharge static electricity between this base material and a adsorption|suction stage.

In the above configuration, preferably, the substrate has a multilayer structure, and an antistatic agent is contained in at least one outermost layer of the substrate of the multilayer structure. If an antistatic agent is contained in the outermost layer on the side of the adhesive layer of the substrate of the multilayer structure, the substrate and the adhesive can be suppressed. The static electricity of both layers. Further, when the antistatic agent is contained in the outermost layer on the side opposite to the adhesive layer of the substrate of the multilayer structure, the peeling static electricity between the substrate and the adsorption stage can be more effectively suppressed.

In the above configuration, it is preferable that an antistatic agent layer containing an antistatic agent is formed on at least one surface of the substrate. When an antistatic agent layer is formed on the surface of the adhesive layer side of the substrate, static electricity can be suppressed between the substrate and the adhesive layer. Further, when the antistatic agent layer is formed on the surface of the substrate opposite to the adhesive layer, the peeling static electricity between the substrate and the adsorption stage can be more effectively suppressed.

In the above configuration, it is preferred that the adhesive layer contains an antistatic agent. When the antistatic agent is contained in the adhesive layer, it is possible to more effectively suppress the peeling of static electricity when the adhesive layer and the adhesive sheet are peeled off.

In the above configuration, it is preferred that the adhesive sheet contains an antistatic agent. If the antistatic agent is contained in the subsequent sheet, it also has an antistatic effect after being peeled off from the dicing tape. As a result, it is possible to suppress the destruction of the semiconductor element due to static electricity after peeling from the dicing tape.

Further, according to a first aspect of the invention, there is provided a method of manufacturing a semiconductor device using the dicing tape-integrated bonding sheet described above, comprising the step of: forming a bonding sheet in the dicing tape-integrated bonding sheet; a step of attaching a semiconductor wafer to the material; a step of cutting the semiconductor wafer to form a semiconductor element; and a step of picking the semiconductor element together with the adhesive sheet from the adhesive layer of the dicing tape.

According to the above configuration, the above-described diced tape-integrated bonding sheet is used. Therefore, the peeling force of the above adhesive layer and the above-mentioned succeeding sheet is 0.02 to 0.5 N/20 mm. Since the peeling force is 0.02 N/20 mm or more, the semiconductor wafer can be fixed at the time of dicing. Moreover, since the peeling force is 0.5 N/20 mm or less, it is possible to pick up The semiconductor element attached to the sheet is easily peeled off from the adhesive layer. Further, since the absolute value of the peeling static voltage at the time of peeling by the peeling test is 0.5 kV or less, an antistatic effect can be exhibited. As a result, it is possible to prevent the semiconductor element from being broken due to the peeling of static electricity at the time of picking up, and the reliability as a device is improved.

Moreover, in order to solve the above problem, the semiconductor device according to the first aspect of the invention is characterized in that it is produced by using the above-described diced tape-integrated bonding sheet.

Further, the inventors of the present invention conducted research to solve the above-mentioned problems, and as a result, found that the surface resistivity value of at least one of the base material of the dicing tape and the adhesive layer is set to a certain range. The second invention can be completed by suppressing destruction of the circuit on the semiconductor element.

In other words, the second aspect of the invention is characterized in that it comprises a dicing tape in which an adhesive layer is laminated on a substrate, and a dicing tape-integrated lining sheet of a subsequent sheet formed on the adhesive layer, and The surface resistivity of at least one of the substrate and the pressure-sensitive adhesive layer has a surface resistivity of 1.0 × 10 ¹¹ Ω or less.

According to the above configuration, since at least one of the surface of the base material and the pressure-sensitive adhesive layer has a surface resistivity of 1.0 × 10 ¹¹ Ω or less, charging is less likely. Therefore, an antistatic effect can be exerted. As a result, it is possible to prevent the semiconductor element from being broken due to the peeling of static electricity at the time of picking up, and the reliability as a device is improved.

In the above configuration, it is preferable that the adhesive sheet is a film for flip chip type semiconductor back surface formed on the back surface of a semiconductor element in which a flip chip is connected to an adherend. In the case where the subsequent sheet is a film for flip chip type semiconductor back surface, the film for flip chip type semiconductor back surface is formed on the back surface of the semiconductor element, and the circuit surface of the semiconductor element is exposed. However, at least one of the surface of the substrate and the adhesive layer has a surface resistivity of 1.0 × 10 ¹¹ Ω or less. As a result, it is possible to prevent the circuit surface of the bare semiconductor element from being broken by peeling off static electricity.

In the above configuration, it is preferred that the substrate contains an antistatic agent. After the dicing, when the dicing tape is removed from the adsorption stage of the fixed dicing tape, there is a case where the static electricity is peeled off between the dicing tape and the adsorption stage. Therefore, when an antistatic agent is contained in a base material, it can suppress the discharge static electricity between this base material and a adsorption|suction stage.

In the above configuration, preferably, the substrate has a multilayer structure, and an antistatic agent is contained in at least one outermost layer of the substrate of the multilayer structure. When an antistatic agent is contained in the outermost layer on the side of the adhesive layer of the substrate of the multilayer structure, static electricity between the substrate and the adhesive layer can be suppressed. Further, when the antistatic agent is contained in the outermost layer on the side opposite to the adhesive layer of the substrate of the multilayer structure, the peeling static electricity between the substrate and the adsorption stage can be more effectively suppressed.

In the above configuration, it is preferable that an antistatic agent layer containing an antistatic agent is formed on at least one surface of the substrate. When an antistatic agent layer is formed on the surface of the adhesive layer side of the substrate, static electricity can be suppressed between the substrate and the adhesive layer. Further, when the antistatic agent layer is formed on the surface of the substrate opposite to the adhesive layer, the peeling static electricity between the substrate and the adsorption stage can be more effectively suppressed.

In the above configuration, it is preferred that the adhesive layer contains an antistatic agent. When the antistatic agent is contained in the adhesive layer, it is possible to more effectively suppress the peeling of static electricity when the adhesive layer and the adhesive sheet are peeled off.

In the above configuration, it is preferred that the antistatic agent is a polymer type antistatic agent. When the antistatic agent is a polymer type antistatic agent, it is less likely to bleed out from the substrate or the adhesive layer. As a result, it is possible to suppress a decrease in the antistatic function caused by the passage of time.

Further, according to a second aspect of the invention, there is provided a method of manufacturing a semiconductor device using the dicing tape-integrated bonding sheet described above, comprising the step of: forming a bonding sheet in the dicing tape-integrated bonding sheet; a step of attaching a semiconductor wafer to the material; and cutting the semiconductor wafer to form a semiconductor element; The step of picking up the above-mentioned semiconductor element together with the above-mentioned succeeding sheet from the adhesive layer of the dicing tape.

According to the above configuration, the above-described diced tape-integrated bonding sheet is used. Therefore, at least one surface of the substrate and the pressure-sensitive adhesive layer has a surface resistivity value of 1.0 × 10 ¹¹ Ω or less. Since the surface resistivity value is 1.0 × 10 ¹¹ Ω or less, an antistatic effect can be exhibited. As a result, it is possible to prevent the semiconductor element from being broken due to the peeling of static electricity at the time of picking up, and the reliability as a device is improved.

In addition, the inventors of the present invention have studied in order to solve the above-mentioned problems, and have found that a polymer type antistatic agent can be contained in at least one of a base material of a dicing tape and an adhesive layer. The third invention is completed by suppressing destruction of the circuit on the semiconductor element.

In other words, the third aspect of the invention is characterized in that it comprises a dicing tape in which an adhesive layer is laminated on a substrate, and a dicing tape-integrated lining sheet of a subsequent sheet formed on the adhesive layer, and A polymer type antistatic agent is contained in at least one of the substrate and the adhesive layer.

According to the above configuration, since at least one of the base material and the pressure-sensitive adhesive layer contains a polymer type antistatic agent, charging is less likely. Therefore, an antistatic effect can be exerted. Further, since a polymer type antistatic agent is used as an antistatic agent, it is less likely to bleed out from the substrate or the adhesive layer. As a result, it is possible to suppress a decrease in the antistatic function caused by the passage of time.

In the above configuration, it is preferable that the adhesive sheet is a film for flip chip type semiconductor back surface formed on the back surface of a semiconductor element in which a flip chip is connected to an adherend. In the case where the subsequent sheet is a film for flip chip type semiconductor back surface, the film for flip chip type semiconductor back surface is formed on the back surface of the semiconductor element, and the circuit surface of the semiconductor element is exposed. However, at least one of the above substrate and the above adhesive layer contains a polymer type Antistatic agent. As a result, it is possible to prevent the circuit surface of the bare semiconductor element from being broken by peeling off static electricity.

In the above configuration, preferably, the substrate has a multilayer structure, and an antistatic agent is contained in at least one outermost layer of the substrate of the multilayer structure. When an antistatic agent is contained in the outermost layer on the side of the adhesive layer of the substrate of the multilayer structure, static electricity between the substrate and the adhesive layer can be suppressed. Further, when the antistatic agent is contained in the outermost layer on the side opposite to the adhesive layer of the substrate of the multilayer structure, the peeling static electricity between the substrate and the adsorption stage can be more effectively suppressed.

In the above configuration, it is preferable that an antistatic agent layer containing an antistatic agent is formed on at least one surface of the substrate. When an antistatic agent layer is formed on the surface of the adhesive layer side of the substrate, static electricity can be suppressed between the substrate and the adhesive layer. Further, when the antistatic agent layer is formed on the surface of the substrate opposite to the adhesive layer, the peeling static electricity between the substrate and the adsorption stage can be more effectively suppressed.

According to a third aspect of the invention, there is provided a method of manufacturing a semiconductor device using the dicing tape-integrated bonding sheet described above, comprising the step of: forming a bonding sheet in the dicing tape-integrated bonding sheet; a step of attaching a semiconductor wafer to the material; a step of cutting the semiconductor wafer to form a semiconductor element; and a step of picking the semiconductor element together with the adhesive sheet from the adhesive layer of the dicing tape.

According to the above configuration, the above-described diced tape-integrated bonding sheet is used. Therefore, a polymer type antistatic agent is contained in at least one of the base material and the pressure-sensitive adhesive layer. Since at least one of the base material and the pressure-sensitive adhesive layer contains a polymer-type antistatic agent, an antistatic effect can be exhibited. As a result, it is possible to prevent the semiconductor element from being broken due to the peeling of static electricity at the time of picking up, and the reliability as a device is improved. Moreover, since a polymer type antistatic agent is used as an antistatic agent, it is not easily formed from a substrate or an adhesive layer. Exudation. As a result, it is possible to suppress a decrease in the antistatic function caused by the passage of time.

Moreover, the inventors of the present invention have conducted research to solve the above-mentioned problems, and as a result, it has been found that by setting the surface resistivity value of any surface of the succeeding sheet for manufacturing a semiconductor device within a certain range, The fourth invention is completed by suppressing destruction of the circuit on the semiconductor element.

That is, the succeeding sheet of the fourth aspect of the invention is characterized in that it is used for producing a succeeding sheet of a semiconductor device, and the surface resistivity value of any of the surfaces thereof is 1.0 × 10 ¹¹ Ω or less.

According to the above configuration, since the surface resistivity value of any of the subsequent sheets is 1.0 × 10 ¹¹ Ω or less, charging is not easy. Therefore, an antistatic effect can be exerted. As a result, when it is attached to a dicing tape and used as a dicing tape-integrated sheet, it is possible to prevent the semiconductor element from being broken due to peeling off static electricity during pick-up, and to improve reliability as a device.

In the above configuration, it is preferable that the adhesive sheet is a film for flip chip type semiconductor back surface formed on the back surface of a semiconductor element in which a flip chip is connected to an adherend. In the case where the subsequent sheet is a film for flip chip type semiconductor back surface, the film for flip chip type semiconductor back surface is formed on the back surface of the semiconductor element, and the circuit surface of the semiconductor element is exposed. However, the surface resistivity value of any surface of the film for flip chip type semiconductor back surface is 1.0 × 10 ¹¹ Ω or less. As a result, it is possible to prevent the circuit surface of the bare semiconductor element from being broken by peeling off static electricity.

In the above configuration, it is preferred that the adhesive sheet contains an antistatic agent. If an antistatic agent is contained in the subsequent sheet, it also has an antistatic effect after peeling off from the dicing tape. As a result, the destruction of the semiconductor element due to static electricity can be suppressed even after the dicing tape is peeled off.

Further, the dicing tape-integrated sheet of the fourth aspect of the invention is characterized in that it comprises a dicing tape in which an adhesive layer is laminated on a substrate, and the above-described succeeding sheet, and the above-mentioned succeeding sheet is formed on On the above adhesive layer.

According to the above configuration, since the surface resistivity value of any of the subsequent sheets is 1.0 × 10 ¹¹ Ω or less, charging is not easy. Therefore, an antistatic effect can be exerted. As a result, it is possible to prevent the semiconductor element from being broken due to the peeling of static electricity at the time of picking up, and the reliability as a device is improved.

According to a fourth aspect of the invention, there is provided a method of manufacturing a semiconductor device using the above-described succeeding sheet, comprising the steps of: preparing a dicing tape having an adhesive layer laminated on a substrate; a step of attaching the above-mentioned adhesive sheet to the adhesive layer of the dicing tape to obtain a dicing tape-integrated sheet; and a semiconductor wafer is attached to the subsequent sheet in the dicing ribbon-integrated sheet a step of cutting the semiconductor wafer to form a semiconductor element; and a step of picking up the semiconductor element together with the adhesive sheet from the adhesive layer of the dicing tape.

Further, according to a fourth aspect of the invention, there is provided a method of manufacturing a semiconductor device using the dicing tape-integrated film of the above-described dicing tape-integrated sheet, and comprising the step of: forming a film in the dicing tape-integrated sheet. a step of attaching a semiconductor wafer to the material; a step of cutting the semiconductor wafer to form a semiconductor element; and a step of picking the semiconductor element together with the adhesive sheet from the adhesive layer of the dicing tape.

According to the above configuration, the above-described succeeding sheet or the diced tape-integrated sheet is used. Therefore, the surface resistivity value of any of the surfaces of the sheet is then 1.0 × 10 ¹¹ Ω or less. Since the surface resistivity value is 1.0 × 10 ¹¹ Ω or less, an antistatic effect can be exhibited. As a result, it is possible to prevent the semiconductor element from being broken due to the peeling of static electricity at the time of picking up, and the reliability as a device is improved.

Moreover, in order to solve the above problems, the semiconductor device of the fourth aspect of the invention is characterized in that This was produced using the above-described succeeding sheet.

Moreover, in order to solve the above problems, the semiconductor device according to the fourth aspect of the invention is characterized in that it is produced by using the above-described diced tape-integrated bonding sheet.

In addition, the inventors of the present invention have studied in order to solve the above-mentioned problems, and have found that it is possible to suppress the circuit on the semiconductor element by including the polymer type antistatic agent in the subsequent sheet for manufacturing the semiconductor device. Destroy, thereby completing the fifth invention.

That is, the succeeding sheet of the fifth aspect of the invention is characterized in that it is used for producing a back sheet of a semiconductor device and contains a polymer type antistatic agent.

According to the above configuration, since the polymer type antistatic agent is contained in the subsequent sheet, charging is less likely. Therefore, an antistatic effect can be exerted. Moreover, since a polymer type antistatic agent is used as an antistatic agent, it is difficult to bleed out from the subsequent sheet. As a result, it is possible to suppress a decrease in the antistatic function caused by the passage of time. Further, since the polymer sheet contains a polymer type antistatic agent, when it is attached to a dicing tape and used as a dicing tape-integrated sheet, it also has an antistatic effect after being peeled off from the dicing tape. As a result, the destruction of the semiconductor element due to static electricity can be suppressed even after the dicing tape is peeled off.

In the above configuration, it is preferable that the adhesive sheet is a film for flip chip type semiconductor back surface formed on the back surface of a semiconductor element in which a flip chip is connected to an adherend. In the case where the subsequent sheet is a film for flip chip type semiconductor back surface, the film for flip chip type semiconductor back surface is formed on the back surface of the semiconductor element, and the circuit surface of the semiconductor element is exposed. However, a polymer type antistatic agent is contained in the subsequent sheet. As a result, it is possible to prevent the circuit surface of the bare semiconductor element from being broken by peeling off static electricity.

Further, the dicing tape-integrated sheet of the fifth aspect of the invention is characterized in that the dicing tape comprising a layer of an adhesive layer laminated on a substrate and the above-mentioned succeeding sheet are formed, and the above-mentioned succeeding sheet is formed on On the above adhesive layer.

According to the above configuration, since the polymer type antistatic agent is contained in the subsequent sheet, charging is less likely. Therefore, an antistatic effect can be exerted. As a result, it can be prevented due to picking The peeling of the static electricity causes the semiconductor element to be broken, improving the reliability as a device. Moreover, since a polymer type antistatic agent is used as an antistatic agent, it is difficult to bleed out from the subsequent sheet. As a result, it is possible to suppress a decrease in the antistatic function caused by the passage of time. Moreover, since the polymer type antistatic agent is contained in the subsequent sheet, it has an antistatic effect even after peeling from the dicing tape. As a result, the destruction of the semiconductor element due to static electricity can be suppressed even after the dicing tape is peeled off.

Further, a fifth aspect of the invention is directed to a method of manufacturing a semiconductor device using the above-described succeeding sheet, and comprising the steps of: preparing a dicing tape having an adhesive layer laminated on a substrate; a step of attaching the above-mentioned adhesive sheet to the adhesive layer of the dicing tape to obtain a dicing tape-integrated sheet; and a semiconductor wafer is attached to the subsequent sheet in the dicing ribbon-integrated sheet a step of cutting the semiconductor wafer to form a semiconductor element; and a step of picking up the semiconductor element together with the adhesive sheet from the adhesive layer of the dicing tape.

According to a fifth aspect of the invention, there is provided a method of manufacturing a semiconductor device using the dicing tape-integrated film of the above-described dicing tape-integrated sheet, and comprising the step of: forming a sheet in the dicing tape-integrated sheet. a step of attaching a semiconductor wafer to the material; a step of cutting the semiconductor wafer to form a semiconductor element; and a step of picking the semiconductor element together with the adhesive sheet from the adhesive layer of the dicing tape.

According to the above configuration, the above-described succeeding sheet or the diced tape-integrated sheet is used. Therefore, since the polymer type antistatic agent is contained in the subsequent sheet, an antistatic effect can be exhibited. As a result, it is possible to prevent the semiconductor element from being peeled off due to pick-up during pick-up. Damaged and improved as a device's reliability. Moreover, since a polymer type antistatic agent is used as an antistatic agent, it is difficult to bleed out from the subsequent sheet. As a result, it is possible to suppress a decrease in the antistatic function caused by the passage of time. Moreover, since the polymer type antistatic agent is contained in the subsequent sheet, it has an antistatic effect even after peeling from the dicing tape. As a result, the destruction of the semiconductor element due to static electricity can be suppressed even after the dicing tape is peeled off.

Moreover, in order to solve the above problems, the semiconductor device of the fifth aspect of the invention is characterized in that it is manufactured using the above-described succeeding sheet.

Moreover, in order to solve the above problem, the semiconductor device according to the fifth aspect of the invention is characterized in that it is produced by using the above-described diced tape-integrated bonding sheet.

1,10,20‧‧‧Cutting tape integrated semiconductor back film

2‧‧‧Flip-chip type semiconductor back surface film (film for semiconductor back surface)

3‧‧‧Cutting Tape

31‧‧‧Substrate

32‧‧‧Adhesive layer

33‧‧‧Parts corresponding to the adhesive portion of the semiconductor wafer

35, 36‧‧‧Antistatic agent layer

4‧‧‧Semiconductor wafer

5‧‧‧Semiconductor wafer

51‧‧‧Bumps formed on the circuit side of the semiconductor wafer 5

6‧‧‧Adhesive body

61‧‧‧ Conductive material for bonding to the bonding pads of the adherend 6

100‧‧‧Acrylic board samples

102‧‧‧sample fixed table

104‧‧‧potentiometer

110‧‧‧Adsorption station

Fig. 1 is a schematic cross-sectional view showing a film for a dicing tape-integrated semiconductor back surface of the embodiment.

Fig. 2 is a schematic configuration diagram for explaining a method of measuring the peeling static voltage.

Fig. 3 is a schematic cross-sectional view showing a film for a dicing tape-integrated semiconductor back surface according to another embodiment.

Fig. 4 is a schematic cross-sectional view showing a film for a dicing tape-integrated semiconductor back surface according to another embodiment.

(a) to (d) of FIG. 5 are schematic cross-sectional views showing an example of a method of manufacturing a semiconductor device using the dicing tape-integrated semiconductor back surface film of the present embodiment.

<First invention>

The first embodiment of the present invention will be described with reference to the drawings, but the first invention is not limited to the examples. In the following, first, the case where the diced tape-integrated sheet of the first invention is a film for a diced tape-integrated semiconductor back surface will be described. In other words, the case where the subsequent sheet of the first invention is a film for flip chip type semiconductor back surface will be described. Fig. 1 is a cross-sectional view showing an example of a film for a dicing tape-integrated semiconductor back surface of the embodiment; Figure. In addition, in this specification, the part which does not need to be described is abbreviate|omitted, and the part which shows in FIG.

(Cutting tape integrated semiconductor back surface film)

As shown in FIG. 1, the dicing tape-integrated semiconductor back surface film 1 is a dicing tape 3 including an adhesive layer 32 on a substrate 31, and a flip chip type semiconductor back surface provided on the adhesive layer 32. A film (hereinafter sometimes referred to as "film for semiconductor back surface") 2 is used. Further, the film for the dicing tape-integrated semiconductor back surface of the first aspect of the present invention may be as shown in FIG. 1, on the adhesive layer 32 of the dicing tape 3, only in the portion corresponding to the affixed portion of the semiconductor wafer. 33. The semiconductor back surface film 2 is formed; the semiconductor back surface film may be formed on the entire surface of the adhesive layer 32; and the film may be larger than the portion 33 corresponding to the semiconductor wafer. Further, a portion smaller than the entire surface of the adhesive layer 32 is formed with a film for a semiconductor back surface. Further, the surface of the film 2 for semiconductor back surface (the surface on the side opposite to the back surface of the wafer) can be protected by a separator or the like before being attached to the back surface of the wafer.

In the peeling test of the film 1 for the dicing tape-integrated semiconductor back surface at a peeling speed of 10 m/min and a peeling angle of 150°, the peeling force of the adhesive layer 32 and the succeeding sheet 2 is 0.02 to 0.5 N/20 mm, preferably 0.02. ~0.3N/20mm, more preferably 0.02~0.2N/20mm. Since the peeling force is 0.02 N/20 mm or more, the semiconductor wafer can be fixed at the time of dicing. Moreover, since the peeling force is 0.5 N/20 mm or less, the semiconductor element attached to the sheet 2 can be easily peeled off from the adhesive layer 32 at the time of picking up.

Further, in the film 1 for the dicing tape-integrated semiconductor back surface, the absolute value of the peeling static voltage when the adhesive layer 32 and the succeeding sheet 2 are peeled off according to the conditions of the peeling test is 0.5 kV or less (-0.5 kV~ +0.5 kV), preferably 0.3 kV or less (-0.3 kV to +0.3 kV), more preferably 0.2 kV or less (-0.2 kV to +0.2 kV). According to the conditions of the peeling test, the absolute value of the peeling static voltage when the adhesive layer 32 and the succeeding sheet 2 are peeled off is 0.5 kV or less, so that an antistatic effect can be exhibited. As a result, it can be prevented due to picking The peeling of the static electricity causes the semiconductor element to be broken, improving the reliability as a device.

Here, a method of measuring the peeling static voltage will be described.

Fig. 2 is a schematic configuration diagram for explaining a method of measuring a peeling static voltage. First, the film 1 for dicing tape-integrated semiconductor back surface was bonded to a previously removed acrylic plate 100 (thickness: 1 mm, width: 70 mm, length: 100 mm). At the time of bonding, a hand roller is used so that the acrylic plate 100 and the dicing tape 3 are opposed to each other via a double-sided tape. In this state, it was left to stand in an environment of 23 ° C and 50% RH. Then, the acrylic plate 100 to which the film 1 for dicing tape-integrated semiconductor back surface is bonded is fixed to the sample fixing table 102. Then, the end portion of the film 2 for semiconductor back surface was fixed to an automatic winder, and peeling was performed so that the peeling angle was 150 degrees and the peeling speed was 10 m/min. The surface of the dicing tape 3 side (the surface of the adhesive layer 32) which was produced at this time was measured by a potential measuring machine 104 (KSD-0103, manufactured by Kasuga Electric Co., Ltd.) fixed at a position of 100 mm from the surface of the dicing tape. Potential. The measurement was carried out in an environment of 23 ° C and 50% RH.

In the film 1 for the dicing tape-integrated semiconductor back surface, at least one surface of the substrate 31, the adhesive layer 32, or the film for semiconductor back surface 2 preferably has a surface resistivity value of 1.0 × 10 ¹¹ Ω or less, more preferably It is 1.0 × 10 ¹⁰ Ω or less, and more preferably 1.0 × 10 ⁹ Ω or less. Further, the surface resistivity value is preferably as small as possible, and is, for example, 1.0 × 10 ⁵ Ω or more, 1.0 × 10 ⁶ Ω or more, and 1.0 × 10 ⁷ Ω or more. When the surface resistivity value is 1.0 × 10 ¹¹ Ω or less, charging is not easy. Therefore, the antistatic effect can be further exerted. In the first aspect of the invention, the surface resistivity value of at least one surface of the substrate, the adhesive layer, or the film for semiconductor back surface refers to the surface of the adhesive layer side of the substrate and the substrate. The surface on the opposite side of the adhesive layer, the surface on the substrate side of the adhesive layer, the surface on the opposite side of the adhesive layer from the substrate, the surface on the adhesive layer side of the film for semiconductor back surface, and the film on the semiconductor back surface and the adhesive The surface resistivity value of at least any of the surfaces on the opposite side of the layer. The surface resistivity value is a value measured by the method described in the examples.

In the film 1 for dicing tape-integrated semiconductor back surface, preferably on the substrate 31, the adhesive At least one of the layer 32 and the film 2 for semiconductor back surface contains an antistatic agent.

When the antistatic agent is contained in the base material 31, it is possible to suppress the peeling static electricity between the substrate 31 and the adsorption stage when the adsorption stage of the fixed dicing tape 3 is removed. In particular, when the base material 31 has a multilayer structure and the antistatic agent is contained in the outermost layer on the side of the adhesive layer 32 of the base material 31 of the multilayer structure, static electricity can be suppressed between the base material 31 and the adhesive layer 32. Further, when the antistatic agent is contained in the outermost layer on the side opposite to the adhesive layer 32 of the substrate 31 of the multilayer structure, the peeling static electricity between the substrate 31 and the adsorption stage can be more effectively suppressed.

In addition, when the antistatic agent is contained in the adhesive layer 32, it is possible to more effectively suppress the peeling of static electricity when the adhesive layer 32 and the film for semiconductor back surface 2 are peeled off.

Moreover, when the antistatic agent is contained in the film 2 for semiconductor back surface, it has an antistatic effect after peeling from the dicing tape 3. As a result, after the dicing tape 3 is peeled off, the destruction of the semiconductor element due to static electricity can also be suppressed. In particular, if the film 2 for semiconductor back surface has a multilayer structure and contains an antistatic agent in the outermost layer on the side of the dicing tape 3 of the film 2 for semiconductor back surface of the multilayer structure, the adhesive layer 32 and the semiconductor can be further effectively suppressed. When the film 2 for back surface peeling is peeled off, static electricity is peeled off.

Examples of the antistatic agent include a quaternary ammonium salt, a pyridinium salt, a cationic antistatic agent having a cationic functional group such as a first, second, or a third amino group, a sulfonate or sulfate salt, and a phosphine. Anionic antistatic agent having an anionic functional group such as an acid salt or a phosphate ester salt, an alkylbetaine and a derivative thereof, an imidazoline and a derivative thereof, an amphoteric antistatic agent such as alanine and a derivative thereof, and an amine group Examples of the nonionic antistatic agent such as an alcohol, a derivative thereof, glycerin and a derivative thereof, and a polyethylene glycol or a derivative thereof, and the above-mentioned cationic, anionic or zwitterionic type having an ion conductive group An ion conductive polymer (polymer type antistatic agent) obtained by bulk polymerization or copolymerization. These compounds may be used singly or in combination of two or more. Among them, a polymer type antistatic agent is preferred. When a polymer type antistatic agent is used, it is less likely to bleed out from the substrate 31, the adhesive layer 32, and the film 2 for semiconductor back surface. As a result, it is possible to suppress a decrease in the antistatic function caused by the passage of time.

Specific examples of the cationic antistatic agent include an alkyltrimethylammonium salt, a acyloyl amide propyl trimethyl ammonium methosulfate, and an alkylbenzyl group. a (meth) acrylate copolymer having a quaternary ammonium group such as methylammonium salt, mercapto choline chloride or polydimethylaminoethyl methacrylate, polyvinylbenzyltrimethylammonium chloride A diallylamine copolymer having a quaternary ammonium group such as a styrene copolymer having a quaternary ammonium group or a polydiallyldimethylammonium chloride or the like. These compounds may be used singly or in combination of two or more.

Examples of the anionic antistatic agent include an alkylsulfonate, an alkylbenzenesulfonate, an alkylsulfate, an alkylethoxysulfate, an alkyl phosphate, and a sulfonic acid group. Styrene copolymer. These compounds may be used singly or in combination of two or more.

Examples of the zwitterionic antistatic agent include alkylbetaine, alkylimidazolium betaine, and carbobetaine graft copolymer. These compounds may be used singly or in combination of two or more.

Examples of the nonionic antistatic agent include fatty acid alkylol amide, bis(2-hydroxyethyl)alkylamine, polyoxyethylene alkylamine, fatty acid glyceride, and polyoxyethylene glycol. Fatty acid ester, sorbitan fatty acid ester, polyoxysorbitol fatty acid ester, polyoxyethylene alkyl phenyl ether, polyoxyethylene alkyl ether, polyethylene glycol, polyoxyethylene diamine, containing poly Ether, a copolymer of polyester and polyamine, methoxypolyethylene glycol (meth) acrylate, and the like. These compounds may be used singly or in combination of two or more.

Other examples of the polymer type antistatic agent include polyaniline, polypyrrole, and polythiophene.

Further, examples of the antistatic agent include conductive materials. Examples of the conductive material include tin oxide, antimony oxide, indium oxide, cadmium oxide, titanium oxide, zinc oxide, indium, tin, antimony, gold, silver, copper, aluminum, nickel, chromium, titanium, iron, and cobalt. , copper iodide, and alloys or mixtures thereof.

The content of the antistatic agent is preferably 50% by weight or less, and more preferably 30% by weight or less based on the total resin component of the layer to be added. Further, the content of the antistatic agent is preferably 5% by weight or more, and more preferably 10% by weight or more based on the total resin component of the layer to be added. By including the above antistatic agent within the above numerical range, it is possible to add an antistatic function without impairing the function of the layer to be added. Here, "50% by weight or less based on the total resin component of the layer to be added" means the following meaning.

(a) When the added layer is the substrate 31

When the base material 31 includes one layer, it means 50% by weight or less based on the total resin component of the constituent base material 31.

In the case where the substrate 31 includes a multilayer structure, it means 50% by weight or less based on the total resin component of one of the plurality of layers.

(b) When the added layer is the adhesive layer 32

It means 50% by weight or less with respect to all the resin components constituting the adhesive layer 32.

(c) When the layer to be added is the film 2 for semiconductor back surface

In the case where the film 2 for semiconductor back surface includes one layer, it means 50% by weight or less based on the total resin component of the film 2 for semiconductor back surface.

In the case where the film 2 for semiconductor back surface includes a multilayer structure, it means 50% by weight or less based on the total resin component of one of the plurality of layers.

In addition, it is "30% by weight or less based on the total resin component of the layer to be added", "5% by weight or more based on the total resin component of the layer to be added", and "10% of the total resin component with respect to the layer to be added" In the case where the substrate, the adhesive layer, and the film for semiconductor back surface comprise one layer, the film, the adhesive layer, or the film for semiconductor back surface is formed in the same manner as described above. The ratio of all the resin components in the case of including a multilayer structure means the ratio of all the resin components of one of the plurality of layers constituting the substrate or the film for semiconductor back surface.

In the film for the dicing tape-integrated semiconductor back surface, on at least one surface of the substrate An antistatic agent layer containing an antistatic agent is formed. 3 and 4 are schematic cross-sectional views showing a film for a dicing tape-integrated semiconductor back surface according to another embodiment.

As shown in FIG. 3, the dicing tape-integrated semiconductor back surface film 10 is formed with a dicing tape 3 provided with an adhesive layer 32 on a substrate 31, a semiconductor back surface film 2 provided on the adhesive layer 32, and An antistatic agent layer 35 is formed on the surface of the substrate 31 opposite to the adhesive layer 32. In the film 10 for the dicing tape-integrated semiconductor back surface, since the antistatic agent layer 35 is formed on the surface of the substrate 31 opposite to the adhesive layer 32, the substrate 31 and the adsorption stage can be more effectively suppressed. Stripping static electricity between.

Further, as shown in FIG. 4, the dicing tape-integrated semiconductor back surface film 20 has a structure including a dicing tape 3 provided with an adhesive layer 32 on a substrate 31, and a substrate 31 provided thereon. An antistatic agent layer 36 between the adhesive layers 32 and a film 2 for semiconductor back surface provided on the adhesive layer 32. In the film 20 for the dicing tape-integrated semiconductor back surface, since the antistatic agent layer 36 is formed on the surface of the substrate 31 on the side of the adhesive layer 32, it is possible to suppress static electricity between the substrate 31 and the adhesive layer 32. .

(antistatic agent layer)

The antistatic agent layers 35 and 36 are layers containing at least an antistatic agent. The antistatic agent contained in the antistatic agent layers 35 and 36 can be the same as the antistatic agent in the case where the substrate 31, the adhesive layer 32, and the semiconductor back surface film 2 are contained. Further, the antistatic agent layers 35 and 36 may contain a binder component, a solvent, or the like as needed in addition to the antistatic agent.

The thickness of the antistatic agent layers 35, 36 is preferably from 0.01 to 5 μm, more preferably from 0.03 to 1 μm. By setting the thickness of the antistatic agent layer 35 and the antistatic agent layer 36 to 0.01 μm or more, the antistatic function can be easily exhibited. Moreover, by setting the thickness of the antistatic agent layer 35 and the antistatic agent layer 36 to 5 μm or less, the adhesion performance between the adhesive and the substrate can be improved.

The antistatic agent layers 35 and 36 can be formed by applying a solution for forming an antistatic agent layer to the substrate 31 and drying it. As a coating method, spin coating, spray coating, dip coating, and wire mesh can be used. Various coating methods such as printing and wire bar coating.

(film for flip chip type semiconductor back surface)

The film 2 for semiconductor back surface has a film form. The film 2 for semiconductor back surface is usually in an uncured state (including a semi-hardened state) in the form of a film for a dicing tape-integrated semiconductor back surface as a product, and is bonded to a film for a dicing tape-integrated semiconductor back surface. The semiconductor wafer is thermally hardened (see below for details).

The film for semiconductor back surface may be formed of a resin composition, and may be composed of a resin composition containing a thermoplastic resin and a thermosetting resin. Further, the film for semiconductor back surface may be composed of a thermoplastic resin composition not using a thermosetting resin, or may be composed of a thermosetting resin composition not using a thermoplastic resin.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, and poly Butadiene resin, polycarbonate resin, thermoplastic polyimide resin, nylon 6, nylon 6,6 and other polyamide resin, phenoxy resin, acrylic resin, PET (polyethylene terephthalate) Or a saturated polyester resin such as PBT (polybutylene terephthalate), a polyamidoximine resin, or a fluororesin. The thermoplastic resin may be used singly or in combination of two or more. Among these thermoplastic resins, an acrylic resin or a phenoxy resin is preferable, and further, a phenoxy resin which can maintain a high tensile modulus of stretch and can be film-formed is particularly preferable.

The phenoxy resin is not particularly limited, and examples thereof include a resin obtained by reacting epichlorohydrin with a dihydric phenol compound, and a reaction between a binary epoxy compound and a dihydric phenol compound. An epoxy resin or the like having a phenol component is incorporated in the structural unit. The phenoxy resin may, for example, be exemplified to have a bisphenol skeleton (bisphenol A type skeleton, bisphenol F type skeleton, bisphenol A/F mixed type skeleton, bisphenol S type skeleton, bisphenol M type skeleton, double). Phenol P-type skeleton, bisphenol A/P mixed type skeleton, bisphenol Z type skeleton, etc.), naphthalene skeleton, drop Alkene skeleton, anthracene skeleton, biphenyl skeleton, anthracene skeleton, novolak skeleton, anthracene skeleton, a phenoxy resin or the like of at least one of a skeleton, an adamantane skeleton, and a dicyclopentadiene skeleton. Further, a commercially available product can also be used as the phenoxy resin. The phenoxy resins may be used singly or in combination of two or more.

The acrylic resin is not particularly limited, and may have a carbon number of 30 or less (preferably, a carbon number of 4 to 18, more preferably a carbon number of 6 to 10, and particularly preferably a carbon number of 8 or 9). One or two or more of a chain or branched alkyl group of acrylic acid or methacrylic acid ester as a monomer component or the like. That is, in the first aspect of the invention, the term "acrylic resin" means the broad meaning of the methacrylic resin. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a n-butyl group, a tert-butyl group, an isobutyl group, a pentyl group, an isopentyl group, a hexyl group, a heptyl group, and a 2-ethyl group. Hexyl, octyl, isooctyl, decyl, isodecyl, decyl, isodecyl, undecyl, dodecyl (lauryl), tridecyl, tetradecyl, stearic acid Base, octadecyl and the like.

Further, the other monomer (the monomer other than the alkyl ester of acrylic acid or methacrylic acid having an alkyl group having 30 or less carbon atoms) for forming the acrylic resin is not particularly limited, and examples thereof include acrylic acid. a carboxyl group-containing monomer such as methacrylic acid, carboxyethyl acrylate, carboxy amyl acrylate, itaconic acid, maleic acid, fumaric acid or crotonic acid; maleic anhydride or Anhydride monomer such as itaconic acid anhydride; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, (meth)acrylic acid 6 -hydroxyhexyl ester, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate or (4-hydroxymethylcyclohexyl)-acrylic acid a hydroxyl group-containing monomer such as an ester; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)acrylamido-2-methylpropanesulfonic acid, (meth)acrylamide aminesulfonic acid a sulfonic acid group-containing monomer such as sulfopropyl (meth) acrylate or (meth) propylene phthaloxy naphthalene sulfonic acid; or 2-hydroxyethyl acrylonitrile phosphate Of the phosphoric acid group-containing monomer. Further, the term "(meth)acrylic acid" means acrylic acid and/or methacrylic acid, and has the same meaning as the (meth) group of the first invention.

Further, examples of the thermosetting resin include an epoxy resin and a phenol resin, and an amine resin, an unsaturated polyester resin, a polyurethane resin, a polyoxyxylene resin, and a thermosetting polymer.醯 imine resin and the like. The thermosetting resin may be used singly or in combination of two or more. As the thermosetting resin, it is particularly preferable to contain a small amount of epoxy resin such as ionic impurities for etching a semiconductor element. Further, as the curing agent for the epoxy resin, a phenol resin can be suitably used.

The epoxy resin is not particularly limited, and for example, a bisphenol A epoxy resin, a bisphenol F epoxy resin, a bisphenol S epoxy resin, a brominated bisphenol A epoxy resin, or a hydrogenation double can be used. Phenolic A type epoxy resin, bisphenol AF type epoxy resin, biphenyl type epoxy resin, naphthalene type epoxy resin, bismuth type epoxy resin, phenol novolac type epoxy resin, o-cresol novolac type epoxy Difunctional epoxy resin or polyfunctional epoxy resin such as resin, trishydroxyphenylmethane type epoxy resin or tetraphenol ethane type epoxy resin, or ethyl uret urea type epoxy resin or isocyanuric acid tricondensate An epoxy resin such as a glyceride type epoxy resin or a glycidylamine type epoxy resin.

As the epoxy resin, a novolak type epoxy resin, a biphenyl type epoxy resin, a trishydroxyphenylmethane type epoxy resin, or a tetraphenol ethane type epoxy resin in the above examples is particularly preferable. This is because the epoxy resin and the phenol resin as the curing agent have sufficient reactivity and are excellent in heat resistance and the like.

Further, the phenol resin functions as a curing agent for the epoxy resin, and examples thereof include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a third butyl phenol novolak resin, and a mercapto group. A phenol novolak type phenol resin such as a phenol novolak resin, a novolac type phenol resin, or a polyhydroxy styrene such as polyparaxyl styrene. The phenol resin may be used singly or in combination of two or more. Among these phenol resins, a phenol novolac resin and a phenol aralkyl resin are particularly preferable. The reason for this is that the connection reliability of the semiconductor device can be improved.

Regarding the ratio of the epoxy resin to the phenol resin, for example, it is suitable to be relative to the above epoxy The epoxy group in the resin component is blended in an amount of from 0.5 equivalent to 2.0 equivalents per one equivalent of the epoxy group in the phenol resin. More preferably, it is 0.8 equivalent - 1.2 equivalent. In other words, when the blending ratio of the two is out of the above range, a sufficient curing reaction cannot be performed, and the properties of the cured epoxy resin are likely to deteriorate.

In the first invention, a thermosetting-promoting catalyst for an epoxy resin and a phenol resin can be used. The thermosetting-promoting catalyst is not particularly limited, and can be appropriately selected from among the known thermosetting-promoting catalysts. The thermosetting-promoting catalyst may be used singly or in combination of two or more. As the thermosetting-promoting catalyst, for example, an amine-based curing accelerator, a phosphorus-based curing accelerator, an imidazole-based curing accelerator, a boron-based curing accelerator, a phosphorus-boron-based curing accelerator, or the like can be used.

The amine-based curing accelerator is not particularly limited, and examples thereof include monoethanolamine trifluoroborate (manufactured by STELLA CHEMIFA Co., Ltd.), dicyandiamide (manufactured by NACALAI TESQUE Co., Ltd.), and the like.

The phosphorus-based curing accelerator is not particularly limited, and examples thereof include triphenylphosphine, tributylphosphine, tris(p-methylphenyl)phosphine, tris(nonylphenyl)phosphine, and diphenyltoluene. Triorganophosphine such as phosphine, tetraphenylphosphonium bromide (trade name: TPP-PB), methyltriphenylphosphonium (trade name: TPP-MB), methyltriphenylphosphonium chloride (trade name: TPP) -MC), methoxymethyltriphenylphosphonium (trade name: TPP-MOC), benzyltriphenylphosphonium chloride (trade name: TPP-ZC), etc. (all manufactured by Beixing Chemical Co., Ltd.). Further, the triphenylphosphine-based compound is preferably one which exhibits substantially no solubility with respect to the epoxy resin. When it is insoluble with respect to an epoxy resin, it can suppress that the thermal hardening progresses excessively. As the thermosetting catalyst having a triphenylphosphine structure and exhibiting substantially insolubility with respect to the epoxy resin, for example, methyltriphenylphosphonium (trade name: TPP-MB) or the like can be exemplified. In addition, the term "non-solubility" means that the thermosetting catalyst containing a triphenylphosphine-based compound is insoluble with respect to a solvent containing an epoxy resin, and more specifically, it is in the range of 10 to 40 ° C in temperature. 10% by weight or more of the inside does not dissolve.

Examples of the imidazole-based hardening accelerator include 2-methylimidazole (trade name: 2MZ), 2-undecylimidazole (trade name: C11-Z), and 2-heptadecylimidazole (trade name: C17Z), 1,2-dimethylimidazole (trade name: 1.2DMZ), 2-ethyl-4-methylimidazole (trade name: 2E4MZ), 2-phenylimidazole (trade name: 2PZ), 2- Phenyl-4-methylimidazole (trade name: 2P4MZ), 1-benzyl-2-methylimidazole (trade name: 1B2MZ), 1-benzyl-2-phenylimidazole (trade name: 1B2PZ), 1 -Cyanoethyl-2-methylimidazole (trade name: 2MZ-CN), 1-cyanoethyl-2-undecylimidazole (trade name: C11Z-CN), 1-cyanoethyl- 2-Phenylimidazolium trimellitate (trade name: 2PZCNS-PW), 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-all three (trade name: 2MZ-A), 2,4-diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-all three (trade name: C11Z-A), 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-all three (trade name: 2E4MZ-A), 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-all three Isocyanuric acid adduct (trade name: 2MA-OK), 2-phenyl-4,5-dihydroxymethylimidazole (trade name: 2PHZ-PW), 2-phenyl-4-methyl-5 -Hydroxymethylimidazole (trade name: 2P4MHZ-PW), etc. (all manufactured by Shikoku Chemical Industry Co., Ltd.).

The boron-based hardening accelerator is not particularly limited, and examples thereof include trichloroborane and the like.

The phosphorus-boron-based hardening accelerator is not particularly limited, and examples thereof include tetraphenylphosphonium tetraphenylborate (trade name: TPP-K) and tetraphenylphosphonium tetra-triborate (trade name: TPP-MK), benzyltriphenylphosphonium tetraphenylborate (trade name: TPP-ZK), triphenylphosphine triphenylborane (trade name: TPP-S), etc. (both Beixing Chemical Co., Ltd.) Made by the company).

The ratio of the thermosetting-promoting catalyst is preferably 0.01% by weight or more and 20% by weight or less based on the total amount of the thermosetting resin. When the ratio of the thermosetting-promoting catalyst is 0.01% by weight or more, even if the semiconductor element to which the flip-chip is bonded to the adherend is thin (for example, even if the thickness is 300 μm or less and further 200 μm or less), Effectively inhibit or prevent warpage. In addition, when the ratio of the thermal curing-promoting catalyst is 20% by weight or less, the amount of shrinkage of the film for semiconductor back surface can be controlled to an appropriate size without being excessively large. The lower limit of the above ratio of the thermosetting-promoting catalyst is preferably 0.03% by weight or more (more preferably 0.05% by weight or more). Further, the upper limit is preferably 18% by weight or less (more preferably 15% by weight or less).

The film for semiconductor back surface is preferably formed of a resin composition containing an epoxy resin and a phenol resin, and is particularly preferably formed of a resin composition containing an epoxy resin, a phenol resin, and a phenoxy resin.

It is important that the film 2 for semiconductor back surface has adhesiveness (adhesiveness) with respect to the back surface (circuit non-formed surface) of the semiconductor wafer. The film 2 for semiconductor back surface can be formed, for example, by a resin composition containing an epoxy resin as a thermosetting resin. In order to crosslink the film 2 for semiconductor back surface in advance to some extent, it is preferred to add a polyfunctional compound which reacts with a functional group at the end of the molecular chain of the polymer or the like as a crosslinking agent at the time of production. Thereby, it is possible to improve the adhesion characteristics at a high temperature and to improve the heat resistance.

The adhesion of the film for semiconductor back surface to the semiconductor wafer (23° C., peeling angle: 180°, peeling speed: 300 mm/min) is preferably 1 N/10 mm or more (for example, 1 N/10 mm width to 10 N/10 mm width). It is preferably 2 N/10 mm or more (for example, 2N/10 mm wide to 10 N/10 mm wide), and particularly preferably 4 N/10 mm or more (for example, 4 N/10 mm wide to 10 N/10 mm wide) or more, whereby it can be excellent. The adhesion is adhered to the semiconductor wafer or the semiconductor element, and the occurrence of floating or the like can be prevented. Moreover, it is also possible to prevent the wafer from flying out during the dicing of the semiconductor wafer. Further, the above-described adhesive force of the film for semiconductor back surface with respect to the semiconductor wafer is, for example, a value measured as follows. In other words, the back side is reinforced by an adhesive tape (trade name "BT315", manufactured by Nitto Denko Corporation) on one surface of the film for semiconductor back surface. Then, a semiconductor wafer having a thickness of 0.6 mm was bonded to the surface of the film for semiconductor back surface having a length of 150 mm and a width of 10 mm which was reinforced by the back surface by a thermal lamination method in which a 2 kg roller was reciprocated once at 50 °C. Then, let it stand on a hot plate (50 ° C) for 2 minutes. Thereafter, it was allowed to stand at room temperature (about 23 ° C) for 20 minutes. After standing, using a peeling tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation), at a temperature of 23 ° C, at a peeling angle of 180 ° and a tensile speed of 300 mm / min, the warp was carried out. The back side of the semiconductor back surface is peeled off by a film. The adhesive force is a value (N/10 mm width) measured by peeling off the interface between the film for semiconductor back surface and the semiconductor wafer at this time.

The crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, for example, in addition to the isocyanate crosslinking agent, the epoxy crosslinking agent, the melamine crosslinking agent, and the peroxide crosslinking agent, a urea crosslinking agent and a metal alkoxide system may be mentioned. a crosslinking agent, a metal chelate crosslinking agent, a metal salt crosslinking agent, a carbon diimide crosslinking agent, An oxazoline crosslinking agent, an aziridine crosslinking agent, an amine crosslinking agent, and the like. The crosslinking agent is preferably an isocyanate crosslinking agent or an epoxy crosslinking agent. Further, the above crosslinking agents may be used singly or in combination of two or more.

Examples of the isocyanate crosslinking agent include lower aliphatic polyisocyanates such as 1,2-ethylidene diisocyanate, 1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate; Cycloaliphatic diisocyanate, cyclohexyl diisocyanate, isophorone diisocyanate, hydrogenated toluene diisocyanate, hydrogenated xylene diisocyanate and other alicyclic polyisocyanates; 2,4-toluene diisocyanate, 2,6- An aromatic polyisocyanate such as toluene diisocyanate, 4,4'-diphenylmethane diisocyanate or benzodimethyl diisocyanate, or a trimethylolpropane/toluene diisocyanate trimer adduct may be used. (manufactured by Nippon Polyurethane Industry Co., Ltd., trade name "CORONATE L"), trimethylolpropane / hexamethylene diisocyanate terpolymer adduct (manufactured by Nippon Polyurethane Industry Co., Ltd., trade name "CORONATE HL" )Wait. Moreover, examples of the epoxy-based crosslinking agent include N, N, N', N'-tetraglycidyl-m-xylylenediamine, diglycidylaniline, and 1,3-bis(N, N-glycidylaminomethyl)cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, poly Ethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether , trimethylolpropane polyglycidyl ether, diglycidyl adipate, diglycidyl phthalate, tris(2-hydroxyethyl) isocyanuric acid triglycidyl ester, resorcinol Examples of the glycidyl ether and the bisphenol S-diglycidyl ether include an epoxy resin having two or more epoxy groups in the molecule.

Further, the amount of the crosslinking agent used is not particularly limited, and may be appropriately selected depending on the degree of crosslinking. Specifically, the amount of the crosslinking agent to be used is preferably, for example, 7 parts by weight or less based on the polymer component (especially a polymer having a functional group at the end of the molecular chain) (for example, 0.05 part by weight or less). 7 parts by weight). When the amount of the crosslinking agent used is more than 7 parts by weight based on 100 parts by weight of the polymer component, the adhesion is lowered, which is not preferable. Further, from the viewpoint of improving the cohesive force, the amount of the crosslinking agent used is preferably 0.05 parts by weight or more based on 100 parts by weight of the polymer component.

Further, in the first aspect of the invention, the crosslinking treatment may be carried out by irradiation with an electron beam or ultraviolet rays instead of using a crosslinking agent or by using a crosslinking agent.

The film for semiconductor back surface is preferably colored. Thereby, it is possible to exhibit excellent marking properties and appearance properties, and it is possible to form a semiconductor device having an appearance of added value. In this way, since the colored film for semiconductor back surface has excellent marking properties, the surface of the semiconductor element or the non-circuit surface side of the semiconductor device using the semiconductor element can be passed through the film for semiconductor back surface, by using a printing method or Various marking methods such as a laser marking method are applied to give various information such as text information or graphic information. In particular, by controlling the color of the coloring, the information (text information, graphic information, etc.) given by the mark can be visually recognized with excellent visibility. In addition, since the film for semiconductor back surface is colored, it is possible to easily distinguish between the dicing tape and the film for semiconductor back surface, and it is possible to improve workability and the like. Further, for example, in the case of a semiconductor device, color discrimination can be performed by product type. When the film for the back surface of the semiconductor is colored (not when it is colorless or transparent), it is rendered by coloring. The color is not particularly limited. For example, it is preferably a dark color such as black, blue or red, and particularly preferably black.

In the present embodiment, the term "dense color" basically means that the L* defined by the L*a*b* color system is 60 or less (0 to 60) (preferably 50 or less (0 to 50), and further Good is 40 or less (0~40)] thicker color.

In addition, the term "black" basically means that the L* defined by the L*a*b* color system is 35 or less (0 to 35) (preferably 30 or less (0 to 30), and more preferably 25 or less ( 0~25)] black color. Further, in black, a* or b* defined by the L*a*b* color system can be appropriately selected according to the value of L*. As a* or b*, for example, both of them are preferably -10 to 10, more preferably -5 to 5, and particularly preferably a range of -3 to 3 (particularly 0 or substantially 0).

Further, in the present embodiment, the L*, a*, and b* defined by the L*a*b* color system are color-color difference meters (trade name "CR-200", color manufactured by MINOLTA Co., Ltd.). The color difference meter was measured and determined. Furthermore, the L*a*b* color system is the color space recommended by the International Commission on Illumination (CIE) in 1976, referring to the color space known as the CIE1976 (L*a*b*) color system. Further, the Japanese industrial specifications of the L*a*b* color system are specified in JIS Z 8729.

When the film for semiconductor back surface is colored, a coloring material (coloring agent) can be used depending on the intended color. As such a coloring material, various concentrated color materials such as a black coloring material, a blue coloring material, and a red coloring material can be suitably used, and a black coloring material is particularly preferable. As a coloring material, a pigment, a dye, or the like can be used. The colorants may be used singly or in combination of two or more. Further, as the dye, a dye of any form such as an acid dye, a reactive dye, a direct dye, a disperse dye, or a cationic dye can be used. Further, the form of the pigment is not particularly limited, and can be appropriately selected from known pigments.

In particular, when a dye is used as the coloring material, the dye is uniformly or substantially uniformly dispersed in the film for semiconductor back surface, so that the film for semiconductor back surface having uniform or substantially uniform coloring concentration can be easily produced. (There is a cleavage ribbon integrated half Film for the back of the conductor). Therefore, when a dye is used as the coloring material, the color density of the film for semiconductor back surface in the film for a dicing tape-integrated semiconductor back surface can be made uniform or substantially uniform, and the marking property or the appearance property can be improved.

The black coloring material is not particularly limited, and can be appropriately selected, for example, from an inorganic black pigment or a black dye. Further, as the black coloring material, a color obtained by mixing a cyan coloring material (blue-green coloring material), a magenta coloring material (purple coloring coloring material), and a yellow coloring material (yellow coloring material) may be used. Mixture. The black coloring materials may be used singly or in combination of two or more. Of course, black pigments can also be used in combination with color materials other than black.

Specifically, examples of the black coloring material include carbon black (furnace black, chimney black, acetylene black, thermal black, lamp black, etc.), graphite (graphite), copper oxide, and manganese dioxide. , azo-based pigments (azomethineazoblack, etc.), nigrosine, phthalocyanine, titanium black, cyanine black, activated carbon, ferrite (non-magnetic ferrite, magnetic ferrite, etc.) Magnetite, chromium oxide, iron oxide, molybdenum disulfide, chromium complex, composite oxide black pigment, lanthanide organic black pigment, and the like.

In the first invention, examples of the black coloring material include CI solvent black 3, CI solvent black 7, CI solvent black 22, CI solvent black 27, CI solvent black 29, CI solvent black 34, and CI solvent black 43. , CI Solvent Black 70, CI Direct Black 17, CI Direct Black 19, CI Direct Black 22, CI Direct Black 32, CI Direct Black 38, CI Direct Black 51, CI Direct Black 71, CI Acid Black 1, CI Acid Black 2 , CI Acid Black 24, CI Acid Black 26, CI Acid Black 31, CI Acid Black 48, CI Acid Black 52, CI Acid Black 107, CI Acid Black 109, CI Acid Black 110, CI Acid Black 119, CI Acid Black 154 Black dyes such as CI dispersion black 1, CI dispersion black 3, CI dispersion black 10, and CI dispersion black 24; black pigments such as CI pigment black 1, CI pigment black 7, and the like.

As such a black color material, for example, the product name "Oil Black BY", the trade name "Oil Black BS", the trade name "Oil Black HBB", the trade name "Oil Black 803", and the trade name "Oil Black 860" are commercially available. "Product name "Oil Black 5970", trade name "Oil Black 5906", trade name "Oil Black 5905" (manufactured by ORIENT CHEMICAL INDUSTRIES, Inc.), etc.

Examples of the coloring material other than the black coloring material include a cyan coloring material, a magenta coloring material, and a yellow coloring material. Examples of the cyan-based coloring matter include CI solvent blue 25, CI solvent blue 36, CI solvent blue 60, CI solvent blue 70, CI solvent blue 93, CI solvent blue 95, CI acid blue 6, CI acid blue 45, and the like. Cyanide dye; CI Pigment Blue 1, CI Pigment Blue 2, CI Pigment Blue 3, CI Pigment Blue 15, CI Pigment Blue 15:1, CI Pigment Blue 15:2, CI Pigment Blue 15:3, CI Pigment Blue 15: 4, CI Pigment Blue 15:5, CI Pigment Blue 15:6, CI Pigment Blue 16, CI Pigment Blue 17, CI Pigment Blue 17:1, CI Pigment Blue 18, CI Pigment Blue 22, CI Pigment Blue 25, CI Pigment Blue 56, CI Pigment Blue 60, CI Pigment Blue 63, CI Pigment Blue 65, CI Pigment Blue 66; CI Reduction Blue 4, CI Reduction Blue 60; CI Pigment Green 7 and other cyanide pigments.

In the magenta dye, examples of the magenta dye include CI solvent red 1, CI solvent red 3, CI solvent red 8, CI solvent red 23, CI solvent red 24, and CI solvent red 25. CI solvent red 27, CI solvent red 30, CI solvent red 49, CI solvent red 52, CI solvent red 58, CI solvent red 63, CI solvent red 81, CI solvent red 82, CI solvent red 83, CI solvent red 84, CI solvent red 100, CI solvent red 109, CI solvent red 111, CI solvent red 121, CI solvent red 122; CI dispersion red 9; CI solvent violet 8, CI solvent violet 13, CI solvent violet 14, CI solvent violet 21, CI Solvent Violet 27; CI Disperse Violet 1; CI Alkaline Red 1, CI Alkali Red 2, CI Alkaline Red 9, CI Alkaline Red 12, CI Alkaline Red 13, CI Alkaline Red 14, CI Alkali Red 15, CI alkaline red 17, CI alkaline red 18, CI alkaline red 22, CI alkaline red 23, CI alkaline red 24, CI alkaline red 27, CI alkaline red 29, CI alkaline red 32, CI alkaline red 34, CI alkaline red 35, CI alkaline red 36, CI alkaline red 37, CI alkaline red 38, CI basic red 39, CI basic red 40; CI alkaline purple 1, CI alkali Sexual purple 3 C.I. Basic Violet 7, C.I. Basic Violet 10, C.I. Basic Violet 14, C.I. Basic Violet 15, C.I. Basic Violet 21, C.I. Basic Violet 25, C.I. Basic Violet 26, C.I. Basic Purple 27, C.I. Basic Violet 28 and the like.

In the magenta coloring material, examples of the magenta pigment include CI Pigment Red 1, CI Pigment Red 2, CI Pigment Red 3, CI Pigment Red 4, CI Pigment Red 5, CI Pigment Red 6, and CI Pigment. Red 7, CI Pigment Red 8, CI Pigment Red 9, CI Pigment Red 10, CI Pigment Red 11, CI Pigment Red 12, CI Pigment Red 13, CI Pigment Red 14, CI Pigment Red 15, CI Pigment Red 16, CI Pigment Red 17, CI Pigment Red 18, CI Pigment Red 19, CI Pigment Red 21, CI Pigment Red 22, CI Pigment Red 23, CI Pigment Red 30, CI Pigment Red 31, CI Pigment Red 32, CI Pigment Red 37, CI Pigment Red 38, CI Pigment Red 39, CI Pigment Red 40, CI Pigment Red 41, CI Pigment Red 42, CI Pigment Red 48:1, CI Pigment Red 48:2, CI Pigment Red 48:3, CI Pigment Red 48:4 , CI Pigment Red 49, CI Pigment Red 49:1, CI Pigment Red 50, CI Pigment Red 51, CI Pigment Red 52, CI Pigment Red 52:2, CI Pigment Red 53:1, CI Pigment Red 54, CI Pigment Red 55, CI Pigment Red 56, CI Pigment Red 57:1, CI Pigment Red 58, CI Pigment Red 60, CI Pigment Red 60:1, CI Pigment Red 63, CI Yan Red 63:1, CI Pigment Red 63:2, CI Pigment Red 64, CI Pigment Red 64:1, CI Pigment Red 67, CI Pigment Red 68, CI Pigment Red 81, CI Pigment Red 83, CI Pigment Red 87, CI Pigment Red 88, CI Pigment Red 89, CI Pigment Red 90, CI Pigment Red 92, CI Pigment Red 101, CI Pigment Red 104, CI Pigment Red 105, CI Pigment Red 106, CI Pigment Red 108, CI Pigment Red 112, CI Pigment Red 114, CI Pigment Red 122, CI Pigment Red 123, CI Pigment Red 139, CI Pigment Red 144, CI Pigment Red 146, CI Pigment Red 147, CI Pigment Red 149, CI Pigment Red 150, CI Pigment Red 151, CI Pigment Red 163, CI Pigment Red 166, CI Pigment Red 168, CI Pigment Red 170, CI Pigment Red 171, CI Pigment Red 172, CI Pigment Red 175, CI Pigment Red 176, CI Pigment Red 177, CI Pigment Red 178, CI Pigment Red 179, CI Pigment Red 184, CI Pigment Red 185, CI Pigment Red 187, CI Pigment Red 190, CI Pigment Red 193, CI Pigment Red 202, CI Pigment Red 206, CI Pigment Red 207, CI Pigment Red 209, CI Pigment Red 219, CI Pigment Red 222, CI Pigment Red 224, CI Pigment Red 238, CI Pigment Red 245; CI Pigment Violet 3, CI Pigment Violet 9, CI Pigment Violet 19, CI Pigment Violet 23, CI Pigment Violet 31, CI Pigment Violet 32, CI Pigment Violet 33, CI Pigment Violet 36, CI Pigment Violet 38, CI Pigment Violet 43, CI Pigment Violet 50; CI Reducing Red 1, CI Reducing Red 2, CI Reducing Red 10, CI Reducing Red 13, CI Reducing Red 15, CI Reducing Red 23, CI Reducing Red 29, CI restores red 35 and so on.

Further, examples of the yellow coloring material include CI Solvent Yellow 19, CI Solvent Yellow 44, CI Solvent Yellow 77, CI Solvent Yellow 79, CI Solvent Yellow 81, CI Solvent Yellow 82, CI Solvent Yellow 93, and CI Solvent Yellow. 98, CI Solvent Yellow 103, CI Solvent Yellow 104, CI Solvent Yellow 112, CI Solvent Yellow 162 and other yellow dyes; CI Pigment Orange 31, CI Pigment Orange 43; CI Pigment Yellow 1, CI Pigment Yellow 2, CI Pigment Yellow 3 , CI Pigment Yellow 4, CI Pigment Yellow 5, CI Pigment Yellow 6, CI Pigment Yellow 7, CI Pigment Yellow 10, CI Pigment Yellow 11, CI Pigment Yellow 12, CI Pigment Yellow 13, CI Pigment Yellow 14, CI Pigment Yellow 15 , CI Pigment Yellow 16, CI Pigment Yellow 17, CI Pigment Yellow 23, CI Pigment Yellow 24, CI Pigment Yellow 34, CI Pigment Yellow 35, CI Pigment Yellow 37, CI Pigment Yellow 42, CI Pigment Yellow 53, CI Pigment Yellow 55 , CI Pigment Yellow 65, CI Pigment Yellow 73, CI Pigment Yellow 74, CI Pigment Yellow 75, CI Pigment Yellow 81, CI Pigment Yellow 83, CI Pigment Yellow 93, CI Pigment Yellow 94, CI Pigment Yellow 95, CI Pigment Yellow 97 , CI Pigment Yellow 98, CI Pigment Yellow 100, CI Pigment Yellow 101, CI Pigment Yellow 104, CI Pigment Yellow 108 , CI Pigment Yellow 109, CI Pigment Yellow 110, CI Pigment Yellow 113, CI Pigment Yellow 114, CI Pigment Yellow 116, CI Pigment Yellow 117, CI Pigment Yellow 120, CI Pigment Yellow 128, CI Pigment Yellow 129, CI Pigment Yellow 133 , CI Pigment Yellow 138, CI Pigment Yellow 139, CI Pigment Yellow 147, CI Pigment Yellow 150, CI Pigment Yellow 151, CI Pigment Yellow 153, CI Pigment Yellow 154, CI Pigment Yellow 155, CI Pigment Yellow 156, CI Pigment Yellow 167 , CI Pigment Yellow 172, CI Pigment Yellow 173, CI Pigment Yellow 180, CI Pigment Yellow 185, CI Pigment Yellow 195; CI-reduced yellow 1, CI-reduced yellow 3, CI-reduced yellow 20 and other yellow pigments.

Various color materials such as cyanide coloring material, magenta coloring material, and yellow coloring material can be used separately Or use two or more combinations. In the case where two or more kinds of coloring materials such as a cyan coloring material, a magenta coloring material, and a yellow coloring material are used, the mixing ratio (or blending ratio) of the coloring materials is not particularly limited. It can be suitably selected according to the kind of each coloring material, the target color, etc.

When the film 2 for semiconductor back surface is colored, the color form is not particularly limited. For example, the film for semiconductor back surface may be a film of a single layer to which a colorant is added. Further, a laminated film in which at least a resin layer formed of a thermosetting resin and a coloring agent layer are laminated may be used. In the case where the film 2 for the semiconductor back surface is a laminated film of a resin layer and a coloring agent layer, the film 2 for semiconductor back surface which is a laminated form preferably has a laminated form of a resin layer/colorant layer/resin layer. In this case, the two resin layers on both sides of the colorant layer may be a resin layer of the same composition or a resin layer of a different composition.

In the film 2 for semiconductor back surface, other additives can be appropriately formulated as needed. As other additives, for example, in addition to a filler (filler), a flame retardant, a decane coupling agent, and an ion scavenger, an extender, an anti-aging agent, an antioxidant, a surfactant, and the like may be mentioned.

As the filler, an inorganic filler or an organic filler may be used, and an inorganic filler is preferable. By the preparation of a filler such as an inorganic filler, it is possible to impart conductivity, thermal conductivity, and adjustment of the elastic modulus to the film for semiconductor back surface. Further, the film 2 for semiconductor back surface may be electrically conductive or non-conductive. Examples of the inorganic filler include ceramics such as cerium oxide, clay, gypsum, calcium carbonate, barium sulfate, aluminum oxide, cerium oxide, cerium carbide, and cerium nitride, aluminum, copper, silver, gold, and nickel. Metals or alloys such as chromium, lead, tin, zinc, palladium, and solder, and various inorganic powders including carbon. The filler may be used singly or in combination of two or more. As the filler, suitable is cerium oxide, especially molten cerium oxide. Further, the average particle diameter of the inorganic filler is preferably in the range of 0.1 μm to 80 μm. The average particle diameter of the inorganic filler can be measured, for example, by a laser diffraction type particle size distribution measuring apparatus.

The amount of the filler (particularly, the inorganic filler) is preferably 80 parts by weight or less (0 parts by weight to 80 parts by weight) based on 100 parts by weight of the organic resin component, and particularly preferably 0 parts by weight to 70 parts by weight.

Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. The flame retardant may be used singly or in combination of two or more. Examples of the above decane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, γ-glycidoxypropyltrimethoxydecane, and γ-glycidoxypropyl c. Methyl diethoxy decane, and the like. The decane coupling agent may be used singly or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and barium hydroxide. The ion scavenger may be used singly or in combination of two or more.

The film 2 for semiconductor back surface can be formed, for example, by a thermoplastic resin such as an epoxy resin or the like, a thermoplastic resin such as a phenoxy resin or an acrylic resin which is used as needed, and a solvent or the like which is added as needed. The resin composition is prepared by mixing additives and the like, and is formed into a film-like layer. Specifically, for example, a film-form layer (adhesive layer) as a film for semiconductor back surface can be formed by applying the above resin composition to the adhesive layer 32 of the dicing tape; A method of forming a resin layer (or an adhesive layer) by applying the above resin composition to a separator (peeling paper or the like), transferring it (transfer) to the adhesive layer 32, and the like. Further, the above resin composition may be a solution or a dispersion.

In the case where the film 2 for semiconductor back surface is formed of a resin composition containing a thermosetting resin such as an epoxy resin, the film for semiconductor back surface is uncured before being applied to the semiconductor wafer, and the thermosetting resin is uncured. Or partially hardened state. In this case, after being applied to the semiconductor wafer (specifically, usually when the sealing material is cured in the flip chip bonding step), the thermosetting resin in the film for semiconductor back surface is completely or substantially completely hardening.

As described above, the film for semiconductor back surface contains a thermosetting resin, and the thermosetting resin The gel fraction of the film for semiconductor back surface is not particularly limited, and may be appropriately selected from the range of 50% by weight or less (0% by weight to 50% by weight), for example, in a state in which it is not hardened or partially cured. It is preferably 30% by weight or less (0% by weight to 30% by weight), and particularly preferably 10% by weight or less (0% by weight to 10% by weight). The method for measuring the gel fraction of the film for semiconductor back surface can be measured by the following measurement method.

<Method for measuring gel fraction>

A film of about 0.1 g was sampled from the back surface of the semiconductor and accurately weighed (weight of the sample), and the sample was wrapped in a mesh sheet, and then immersed in about 50 ml of toluene at room temperature for one week. Then, the solvent-insoluble component (the content of the mesh sheet) was taken out from the toluene, and dried at 130 ° C for about 2 hours, and the solvent-insoluble matter (impregnated. the weight after drying) after drying was weighed, and the following formula was used ( a) Calculate the gel fraction (% by weight).

Gel fraction (% by weight) = [(impregnation. weight after drying) / (weight of sample)] × 100 (a)

Further, the gel fraction of the film for semiconductor back surface can be controlled by heating temperature, heating time, etc., in addition to the kind of the resin component or the content thereof, the kind of the crosslinking agent, or the content thereof.

In the first aspect of the invention, when the film for semiconductor back surface is a film formed of a resin composition containing a thermosetting resin such as an epoxy resin, the adhesion to the semiconductor wafer can be effectively exhibited.

Further, since the cutting water is used in the dicing step of the semiconductor wafer, there is a case where the film for semiconductor back surface absorbs moisture and has a water content of a normal state or higher. When flip chip bonding is performed in such a high water content state, water vapor is accumulated on the interface between the semiconductor back surface film 2 and the semiconductor wafer or the processed body (semiconductor) to cause floating. Therefore, as a film for semiconductor back surface, by providing a core material having high moisture permeability on both surfaces, water vapor can be diffused to avoid the above problem. From the above viewpoints, a multilayer structure in which the film 2 for semiconductor back surface is formed on one side or both sides of the core material can also be used. As a film for semiconductor back surface. Examples of the core material include a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film, etc.), a glass fiber or A resin-made non-woven fiber-reinforced resin substrate, a ruthenium substrate, or a glass substrate.

The thickness of the film 2 for semiconductor back surface (the total thickness in the case of a laminated film) is not particularly limited, and can be appropriately selected, for example, in the range of about 2 μm to 200 μm. Further, the thickness is preferably about 4 μm to 160 μm, more preferably about 6 μm to 100 μm, and still more preferably about 10 μm to 80 μm.

The tensile storage elastic modulus at 23 ° C in the uncured state of the film 2 for semiconductor back surface is preferably 1 GPa or more (for example, 1 GPa to 50 GPa), more preferably 2 GPa or more, and particularly preferably 3 GPa or more. When the tensile storage elastic modulus is 1 GPa or more, the semiconductor element and the semiconductor back surface film 2 are peeled off from the adhesive layer 32 of the dicing tape, and then the semiconductor back surface film 2 is placed on the support and carried out. When transporting or the like, it is possible to effectively suppress or prevent the film for semiconductor back surface from sticking to the support. The above support means, for example, a top tape, a bottom tape or the like in the carrier tape. In the case where the film 2 for semiconductor back surface is formed of a resin composition containing a thermosetting resin, as described above, since the thermosetting resin is usually in an unhardened or partially cured state, the film for semiconductor back surface is The modulus of elasticity at 23 ° C is usually the modulus of elasticity of the thermosetting resin at 23 ° C in an uncured state or a partially hardened state.

Here, the film 2 for semiconductor back surface may be a single layer or a laminated film formed by laminating a plurality of layers, and in the case of a laminated film, the tensile storage elastic modulus at 23 ° C in the uncured state described above may be used. The entire laminated film may be in the range of 1 GPa or more (for example, 1 GPa to 50 GPa). Further, the tensile storage elastic modulus (23 ° C) in the uncured state of the film for semiconductor back surface can be filled with a resin component (thermoplastic resin, thermosetting resin), a content thereof, or a filler such as a cerium oxide filler. The type or its content is controlled. In the case where the film 2 for semiconductor back surface is a laminated film in which a plurality of layers are laminated (semiconductor back side) In the case where the film has a laminated form, the laminated form including the wafer subsequent layer and the laser mark layer may be exemplified as the laminated form. Further, another layer (intermediate layer, light blocking layer, reinforcing layer, colored layer, substrate layer, electromagnetic wave blocking layer, heat conducting layer, adhesive layer, etc.) may be disposed between the wafer underlayer and the laser marking layer. ). Further, the wafer underlayer is a layer that exhibits excellent adhesion (adhesion) to the wafer and is a layer that is in contact with the back surface of the wafer. On the other hand, the laser marking layer is a layer that exhibits excellent laser marking properties and is used for laser marking on the back surface of the semiconductor element.

In addition, the tensile storage elastic modulus is a value of the following: a film for semiconductor back surface 2 in which an uncured state is not laminated in the dicing tape 3, and a dynamic viscoelasticity measuring device "Solid Analyzer RS A2" manufactured by Rheometric Co., Ltd. In the tensile mode, the sample width: 10 mm, sample length: 22.5 mm, sample thickness: 0.2 mm, frequency: 1 Hz, temperature increase rate: 10 ° C / min, nitrogen atmosphere, specific temperature (23 ° C) The value of the tensile storage elastic modulus obtained under the conditions of the measurement.

It is preferable that the film 2 for semiconductor back surface is protected by at least one surface by a separator (release liner) (not shown). For example, in the case of the film 1 for the dicing tape-integrated semiconductor back surface, the spacer may be provided only on one surface of the film for semiconductor back surface, and on the other hand, the film for semiconductor back surface which is not integrated with the dicing tape. In this case, a separator may be provided on one or both sides of the film for semiconductor back surface. The separator has a function as a protective material for protecting the film for semiconductor back surface before being used for practical use. Further, in the case of the film 1 for the dicing tape-integrated semiconductor back surface, the separator may be used as a supporting substrate when the film 2 for semiconductor back surface is transferred to the adhesive layer 32 on the substrate of the dicing tape. . The separator is peeled off when the semiconductor wafer is attached to the film for semiconductor back surface. As the separator, a plastic film (polyethylene terephthalate or the like) which is surface-coated with a release agent such as polyethylene, polypropylene, or a fluorine-based release agent or a long-chain alkyl acrylate release agent may be used. ) or paper, etc. Further, the separator can be formed by a previously known method. Further, the thickness of the separator or the like is not particularly limited.

Further, the visible light (wavelength: 400 nm to 800 nm) of the film 2 for semiconductor back surface The transmittance (visible light transmittance) is not particularly limited, and is, for example, preferably 20% or less (0% to 20%), more preferably 10% or less (0% to 10%), and particularly preferably 5% or less ( 0%~5%). When the visible light transmittance of the film 2 for semiconductor back surface is more than 20%, there is a possibility that the semiconductor element is adversely affected by the passage of light. In addition, the visible light transmittance (%) can be controlled by the kind and content of the resin component of the film 2 for semiconductor back surface, the kind of the coloring agent (pigment, dye, etc.), the content, the content of the inorganic filler, and the like.

The visible light transmittance (%) of the film 2 for semiconductor back surface can be measured as follows. That is, a film 2 for semiconductor back surface having a thickness (average thickness) of 20 μm was produced as a single body. Then, the film 2 for semiconductor back surface is irradiated with visible light having a wavelength of 400 nm to 800 nm at a specific intensity [Device: visible light generating device (product name "ABSORPTION SPECTRO PHOTOMETR") manufactured by Shimadzu Corporation), and the intensity of visible light transmitted through is measured. Further, the value of the visible light transmittance can be obtained from the change in intensity before and after the visible light is transmitted through the film 2 for semiconductor back surface. Further, the visible light transmittance (%; wavelength: 400 nm) of the film 2 for semiconductor back surface having a thickness of 20 μm can be derived from the value of visible light transmittance (%; wavelength: 400 nm to 800 nm) of the film 2 for semiconductor back surface having a thickness of not 20 μm. ~800nm). Further, in the first aspect of the invention, the visible light transmittance (%) in the case of the film 2 for semiconductor back surface having a thickness of 20 μm is obtained, but the film for semiconductor back surface of the first invention is not intended to be limited to a thickness of 20 μm. .

Moreover, as the film 2 for semiconductor back surface, it is preferable that the moisture absorption rate is low. Specifically, the moisture absorption rate is preferably 1% by weight or less, more preferably 0.8% by weight or less. By setting the moisture absorption rate to 1% by weight or less, the laser marking property can be improved. Further, for example, in the reflow soldering step, it is also possible to suppress or prevent generation of voids or the like between the semiconductor back surface film 2 and the semiconductor element. In addition, the moisture absorption rate is a value calculated based on the change in weight of the film 2 for semiconductor back surface in an atmosphere of a temperature of 85 ° C and a relative humidity of 85% RH for 168 hours. In the case where the film 2 for semiconductor back surface is formed of a resin composition containing a thermosetting resin, the moisture absorption rate means a film for semiconductor back surface after heat curing at a temperature of 85 The value is 168 hours at a temperature of °C and a relative humidity of 85% RH. Further, the moisture absorption rate can be adjusted, for example, by changing the amount of addition of the inorganic filler.

Moreover, as the film 2 for semiconductor back surface, it is preferable that the ratio of a volatile component is small. Specifically, the weight reduction ratio (ratio of the weight loss amount) of the film 2 for semiconductor back surface after the heat treatment is preferably 1% by weight or less, more preferably 0.8% by weight or less. The conditions of the heat treatment are, for example, a heating temperature of 250 ° C and a heating time of 1 hour. By setting the weight reduction rate to 1% by weight or less, the laser marking property can be improved. Further, for example, in the reflow soldering step, it is possible to suppress or prevent cracking in the flip chip type semiconductor device. The weight reduction rate can be adjusted, for example, by adding an inorganic substance which can reduce cracks generated during lead-free reflow soldering. In the case where the film 2 for semiconductor back surface is formed of a resin composition containing a thermosetting resin, the weight reduction ratio means a film for semiconductor back surface after heat curing at a heating temperature of 250 ° C and a heating time of 1 The value when heating under hours.

(Cutting tape)

The dicing tape 3 is formed by forming an adhesive layer 32 on the substrate 31. As described above, the dicing tape 3 may have a structure in which the base material 31 and the adhesive layer 32 are laminated. The substrate (support substrate) can be used as a support matrix for an adhesive layer or the like. The base material 31 preferably has radioelasticity. As the substrate 31, for example, a paper-based substrate such as paper; a fiber-based substrate such as a cloth, a nonwoven fabric, a felt, or a net; a metal-based substrate such as a metal foil or a metal plate; and a plastic film such as a film or a sheet of plastic can be used. a base material; a rubber base material such as a rubber sheet; a foam such as a foamed sheet, or a laminate (especially a laminate of a plastic base material and another base material, or a plastic film (or sheet)) Appropriate thin layer bodies such as laminates of each other. In the first aspect of the invention, a plastic substrate such as a plastic film or a sheet can be suitably used as the substrate. Examples of the material of the plastic material include an olefin resin such as polyethylene (PE), polypropylene (PP), or an ethylene-propylene copolymer; an ethylene-vinyl acetate copolymer (EVA), an ionic polymer resin, and the like. Ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, alternating) copolymer, etc. copolymer of ethylene as a monomer component; polyethylene terephthalate (PET), poly Naphthalene Polyesters such as acid diethyl ester (PEN), polybutylene terephthalate (PBT); acrylic resin; polyvinyl chloride (PVC); polyurethane; polycarbonate; polyphenylene sulfide ( PPS); decylamine resin such as polyamine (nylon), wholly aromatic polyamine (polyarylamine); polyetheretherketone (PEEK); polyimine; polyether quinone; Vinyl chloride; ABS (acrylonitrile-butadiene-styrene copolymer); cellulose resin; polyoxyl resin; fluororesin, and the like.

Moreover, as a material of the base material 31, a polymer such as a crosslinked body of the above resin may be mentioned. The plastic film may be used without stretching, or may be subjected to a uniaxial or biaxial stretching treatment as needed. According to the resin sheet which is heat-shrinkable by the stretching treatment or the like, the semiconductor element can be reduced by thermally shrinking the substrate 31 after dicing to reduce the adhesion area between the adhesive layer 32 and the film 2 for semiconductor back surface. The recycling is easy.

In order to improve adhesion to the adjacent layer, retention, etc., the surface of the substrate 31 can be subjected to conventional surface treatment such as chromic acid treatment, ozone exposure, flame exposure, high voltage electric shock exposure, ionizing radiation treatment, etc. The treatment and the coating treatment using a primer (for example, an adhesive substance to be described later).

The substrate 31 may be appropriately selected from the same species or different species, and may be doped with several kinds as needed. Further, in order to impart antistatic ability to the base material 31, a vapor deposition layer containing a conductive material having a thickness of about 30 to 500 Å, such as a metal, an alloy, or the like, may be provided on the base material 31. The substrate 31 may be a single layer or a composite layer of two or more.

The thickness of the substrate 31 (the total thickness in the case of the laminate) is not particularly limited, and may be appropriately selected depending on the strength, flexibility, purpose of use, etc., and is usually, for example, 1000 μm or less (for example, 1 μm to 1000 μm), preferably 10 μm to 500 μm, more preferably 20 μm to 300 μm, and particularly preferably 30 μm to 200 μm, but is not limited thereto.

Further, in the substrate 31, various additives (colorant, filler, plasticizer, anti-aging agent, antioxidant, surfactant, and resistance) can be contained within a range that does not impair the effects of the first aspect of the invention. Fuel, etc.).

The adhesive layer 32 is formed of an adhesive and has adhesiveness. As such adhesion The agent is not particularly limited and may be appropriately selected from known adhesives. Specifically, the adhesive may be, for example, an acrylic adhesive, a rubber adhesive, a vinyl alkyl ether adhesive, a polyoxynoxy adhesive, a polyester adhesive, or a polyamide adhesive. A urethane-based adhesive, a fluorine-based adhesive, a styrene-diene block copolymer-based adhesive, and a thermal-melting resin having a melting point of about 200 ° C or less in these adhesives A known adhesive such as a modified property-adjusting adhesive (for example, Japanese Patent Laid-Open Publication No. SHO 56-61468, Japanese Patent Laid-Open No. Hei 61-174857, Japanese Patent Laid-Open No. SHO63-17981, and Japanese Patent No. In the publication of Kai-kai No. 56-13040, etc., an adhesive having the above characteristics is appropriately selected and used. Further, as the adhesive, a radiation curable adhesive (or an energy ray-curable adhesive) or a heat-expandable adhesive can also be used. The adhesives may be used singly or in combination of two or more.

As the above-mentioned adhesive, an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive can be suitably used, and an acrylic pressure-sensitive adhesive is particularly preferable. Examples of the acrylic adhesive include an acrylic adhesive (such as a homopolymer or a copolymer) using one or two or more kinds of alkyl (meth)acrylates as a monomer component as a base polymer. .

Examples of the (meth)acrylic acid alkyl ester in the acrylic pressure-sensitive adhesive include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, and (meth)acrylic acid. Isopropyl ester, butyl (meth)acrylate, isobutyl (meth)acrylate, second butyl (meth)acrylate, tert-butyl (meth)acrylate, amyl (meth)acrylate, Methyl)hexyl acrylate, heptyl (meth)acrylate, octyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, bismuth (meth)acrylate Esters, isodecyl (meth)acrylate, decyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, Tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, cetyl (meth)acrylate, (meth)acrylic acid (meth)acrylic acid, such as heptayl ester, octadecyl (meth) acrylate, pentadecyl (meth) acrylate, eicosyl (meth) acrylate Alkyl esters and the like. The alkyl (meth)acrylate is preferably an alkyl (meth)acrylate having an alkyl group having 4 to 18 carbon atoms. Further, the alkyl group of the (meth)acrylic acid alkyl ester may be linear or branched.

Further, the acrylic polymer may be modified for cohesive force, heat resistance, crosslinkability, etc., and may contain other monomer components copolymerizable with the above (meth)acrylic acid alkyl ester (copolymerization), if necessary. The unit corresponding to the monomer component). Examples of such a copolymerizable monomer component include (meth)acrylic acid (acrylic acid, methacrylic acid), carboxyethyl acrylate, carboxy amyl acrylate, itaconic acid, maleic acid, and antibutene. a carboxyl group-containing monomer such as acid or crotonic acid; an acid anhydride group-containing monomer such as maleic anhydride or itaconic anhydride; hydroxyethyl (meth)acrylate; hydroxypropyl (meth)acrylate; Hydroxybutyl acrylate, hydroxyhexyl (meth) acrylate, hydroxyoctyl (meth) acrylate, hydroxy decyl (meth) acrylate, hydroxylauryl (meth) acrylate, methacrylic acid (4-hydroxymethyl) Hydroxyl-containing monomer such as cyclohexyl)methyl ester; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)acrylamido-2-methylpropanesulfonic acid, (meth)acrylamide a sulfonic acid group-containing monomer such as sulfonic acid, sulfopropyl (meth) acrylate, (meth) propylene phthaloxy naphthalene sulfonic acid or the like; a phosphate group-containing monomer such as 2-hydroxyethyl acryl decyl phosphate; (Meth) acrylamide, N,N-dimethyl(meth) acrylamide, N-butyl(meth) acrylamide, N-methylol (meth) acrylamide, N- Hydroxymethylpropane (methyl) (N-substituted) guanamine monomer such as ketamine; aminoethyl (meth) acrylate, N, N-dimethylaminoethyl (meth) acrylate, third butyl (meth) acrylate Aminoalkyl (meth) acrylate monomer such as arylaminoethyl ester; (meth)acrylic acid alkoxylate such as methoxyethyl (meth)acrylate or ethoxyethyl (meth)acrylate Alkyl ester monomer; cyanoacrylate monomer such as acrylonitrile or methacrylonitrile; epoxy group-containing acrylic monomer such as glycidyl (meth)acrylate; styrene, α-methylstyrene a styrene monomer; a vinyl ester monomer such as vinyl acetate or vinyl propionate; an olefin monomer such as isoprene, butadiene or isobutylene; a vinyl ether monomer such as vinyl ether; N-ethylene Pyrrolidone, methylvinylpyrrolidone, vinylpyridine, vinylpiperidone, vinylpyrimidine, vinylpiper Vinyl pyridyl , vinyl pyrrole, vinyl imidazole, vinyl Azole, vinyl Nitrogen-containing monomers such as porphyrin, N-vinyl carbamide, N-vinyl caprolactam, N-cyclohexyl maleimide, N-isopropyl maleimide, a maleimide-based monomer such as N-lauryl maleimide or N-phenyl maleimide; N-methyl Ikonide, N-ethyl Coconine, N-butyl Ikonide, N-octyl Icinoimine, N-2-ethylhexylkkonium imine, N-cyclohexylkkonium imine, N- Ikonideimine monomer such as lauryl ikonium imine; N-(methyl) propylene oxymethylene succinimide, N-(methyl) propylene fluorenyl-6-oxy-6 Amber quinone imine monomer such as methylene succinimide or N-(methyl) propylene decyl-8-oxy octamethylene succinimide; polyethylene glycol (meth) acrylate, a glycol-based acrylate monomer such as polypropylene glycol (meth) acrylate, methoxyethylene glycol (meth) acrylate or methoxy polypropylene glycol (meth) acrylate; tetrahydroanthracene (meth) acrylate Acrylates having a heterocyclic ring, a halogen atom, a ruthenium atom or the like, such as an ester, a fluorine (meth) acrylate or a polyfluorene (meth) acrylate Monomer; hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylic acid Ester, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, epoxy acrylate, polyester A polyfunctional monomer such as acrylate, urethane acrylate, divinyl benzene, butyl di(meth) acrylate or hexyl di(meth) acrylate. These copolymerizable monomer components may be used alone or in combination of two or more.

When a radiation curable adhesive (or energy ray hardening type adhesive) is used as the adhesive, the radiation curable adhesive (composition) may, for example, be in the side chain or main chain of the polymer or the main chain. A polymer having a radical-reactive carbon-carbon double bond at the end and used as an intrinsic type of radiation-curable adhesive for a base polymer or a radiation-curable monomer component or oligomer component in an adhesive Hardening type adhesives, etc. In the case of using a heat-expandable pressure-sensitive adhesive as an adhesive, examples of the heat-expandable pressure-sensitive adhesive include an adhesive and a foaming agent (especially, heat-expandable microspheres). Heat-expandable adhesive, etc.

In the first aspect of the invention, various additives (for example, an adhesion-imparting resin, a coloring agent, a thickener, an extender, a filler, and the like) can be contained in the adhesive layer 32 within the range in which the effects of the first invention are not impaired. Plasticizers, anti-aging agents, antioxidants, surfactants, cross-linking agents, etc.).

The crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, the crosslinking agent includes, in addition to the isocyanate crosslinking agent, the epoxy crosslinking agent, the melamine crosslinking agent, and the peroxide crosslinking agent, a urea crosslinking agent and a metal alkoxide. a substance crosslinking agent, a metal chelate crosslinking agent, a metal salt crosslinking agent, a carbon diimide crosslinking agent, The oxazoline crosslinking agent, the aziridine crosslinking agent, and the amine crosslinking agent are preferably an isocyanate crosslinking agent or an epoxy crosslinking agent. The crosslinking agent may be used singly or in combination of two or more. Further, the amount of the crosslinking agent used is not particularly limited.

Examples of the isocyanate crosslinking agent include lower aliphatic polyisocyanates such as 1,2-ethylidene diisocyanate, 1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate; Cycloaliphatic diisocyanate, cyclohexyl diisocyanate, isophorone diisocyanate, hydrogenated toluene diisocyanate, hydrogenated xylene diisocyanate and other alicyclic polyisocyanates; 2,4-toluene diisocyanate, 2,6- An aromatic polyisocyanate such as toluene diisocyanate, 4,4'-diphenylmethane diisocyanate or benzodimethyl diisocyanate, or a trimethylolpropane/toluene diisocyanate trimer adduct may be used. Nippon Polyurethane Industry Co., Ltd., trade name "CORONATE L"], trimethylolpropane / hexamethylene diisocyanate trimer adduct [manufactured by Nippon Polyurethane Industry Co., Ltd., trade name "CORONATE HL"] Wait. Moreover, examples of the epoxy-based crosslinking agent include N, N, N', N'-tetraglycidyl-m-xylylenediamine, diglycidylaniline, and 1,3-bis(N, N-glycidylaminomethyl)cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, poly Ethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether , trimethylolpropane polyglycidyl ether, diglycidyl adipate, diglycidyl phthalate, tris(2-hydroxyethyl) isocyanuric acid triglycidyl ester, resorcinol The glycidyl ether and the bisphenol S-diglycidyl ether are exemplified by an epoxy resin having two or more epoxy groups in the molecule.

Further, in the first aspect of the invention, the crosslinking treatment may be carried out by irradiation with an electron beam or ultraviolet rays instead of using a crosslinking agent or by using a crosslinking agent.

The adhesive layer 32 can be formed, for example, by a usual method of mixing an adhesive (pressure-sensitive adhesive), a solvent or other additives added as needed, and forming a sheet-like layer. Specifically, for example, the adhesive layer 32 can be formed by applying a mixture containing an adhesive and a solvent or other additive added as needed to the substrate 31; and a suitable separator (peeling) A method of forming the adhesive layer 32 by applying the above mixture to paper, etc., and transferring (transferring) the same to the substrate 31.

The thickness of the adhesive layer 32 is not particularly limited, and is, for example, about 5 μm to 300 μm (preferably 5 μm to 200 μm, more preferably 5 μm to 100 μm, and particularly preferably 7 μm to 50 μm). When the thickness of the adhesive layer 32 is within the above range, an appropriate adhesive force can be exhibited. Further, the adhesive layer 32 may be a single layer or a multiple layer.

The adhesion force of the adhesive layer 32 of the dicing tape 3 to the film 2 for semiconductor back surface is preferably in the range of 0.02 N/20 mm to 10 N/20 mm with respect to the adhesion force (23 ° C, peeling angle of 180 degrees, peeling speed of 300 mm/min) of the film 2 for semiconductor back surface. Good range of 0.05N/20mm~5N/20mm. By setting the above-described adhesion force to 0.02 N/20 mm or more, it is possible to prevent the wafer from flying out of the semiconductor element when the semiconductor wafer is diced. On the other hand, by setting the above-described adhesion force to 10 N/20 mm or less, it is possible to prevent peeling of the semiconductor element from being difficult or to cause paste residue when the semiconductor element is picked up.

Further, the film 2 for semiconductor back surface or the film 1 for dicing tape-integrated semiconductor back surface can be wound It is formed in the form of a roll, and may be formed in a form in which a sheet (film) is laminated. For example, in the case of having a form of being wound into a roll, the film for semiconductor back surface 2, or the laminate of the film 2 for semiconductor back surface and the diced tape 3 can be wound by a separator as needed. The film 2 for semiconductor back surface or the film 1 for dicing tape-integrated semiconductor back surface in a state or a form of being wound into a roll is formed in a roll shape. Further, the film-integrated semiconductor back surface film 1 in a state or a form of being wound into a roll may be formed of the substrate 31, an adhesive layer 32 formed on one surface of the substrate 31, and the adhesive. The film for semiconductor back surface on the layer 32 and the release treatment layer (back surface treatment layer) formed on the other surface of the base material 31 are comprised.

In addition, the thickness of the film 1 for the dicing tape-integrated semiconductor back surface (the thickness of the film for the semiconductor back surface and the total thickness of the thickness of the dicing tape including the substrate 31 and the adhesive layer 32) may be, for example, from 8 μm to 1500 μm. The range is preferably from 20 μm to 850 μm (and more preferably from 31 μm to 500 μm, particularly preferably from 47 μm to 330 μm).

Further, in the film 1 for dicing tape-integrated semiconductor back surface, the ratio of the thickness of the film 2 for semiconductor back surface to the thickness of the adhesive layer 32 of the dicing tape 3 or the thickness of the film 2 for semiconductor back surface is controlled. The ratio of the thickness of the dicing tape 3 (the total thickness of the substrate 31 to the adhesive layer 32) can improve the cutting property in the cutting step, the pick-up property in the picking step, and the like, and can be performed in the semiconductor wafer cutting step to the semiconductor The dicing tape-integrated film 1 for semiconductor back surface is effectively utilized in the flip chip bonding step of an element (for example, a semiconductor wafer).

(Manufacturing method of film for dicing tape integrated semiconductor back surface)

In the method for producing a film for a dicing tape-integrated semiconductor back surface of the present embodiment, the film 1 for dicing tape-integrated semiconductor back surface shown in FIG. 1 will be described as an example. First, the substrate 31 can be formed into a film by a conventionally known film forming method. In this case, when the antistatic agent is contained in the substrate 31, an antistatic agent is appropriately added to the material for forming the substrate. Examples of the film forming method include a calender film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, and the like. .

Then, the adhesive composition is applied onto the substrate 31, dried (heated and crosslinked as needed) to form the adhesive layer 32. At this time, when the antistatic agent is contained in the adhesive layer 32, an antistatic agent is appropriately added to the adhesive composition in advance. As a coating method, roll coating, screen coating, gravure coating, etc. are mentioned. Further, the adhesive layer composition may be directly applied to the substrate 31 to form the adhesive layer 32 on the substrate 31, or the adhesive composition may be applied to the surface of the release paper which has been subjected to the release treatment. The adhesive layer 32 is formed, and then the adhesive layer 32 is transferred to the substrate 31. Thereby, the dicing tape 3 in which the adhesive layer 32 was formed on the base material 31 was produced.

On the other hand, the material for forming the film for semiconductor back surface 2 is applied to the release paper so that the thickness after drying becomes a specific thickness, and further dried under specific conditions (in the case of necessity of heat hardening, etc., according to It is necessary to carry out heat treatment and drying to form a coating layer. In the case where the antistatic agent is contained in the film 2 for semiconductor back surface, an antistatic agent is appropriately added to the material for forming the film for semiconductor back surface 2 in advance. The film for semiconductor back surface 2 is formed on the adhesive layer 32 by transferring the coating layer onto the above-mentioned adhesive layer 32. Further, a material for forming the film for semiconductor back surface 2 may be directly applied onto the above-mentioned adhesive layer 32, and then dried under specific conditions (in the case where heat hardening is necessary, etc., heat treatment is performed as needed Drying), the film 2 for semiconductor back surface is formed on the adhesive layer 32. When the film 2 for semiconductor back surface is formed into a multilayer structure and an antistatic agent is contained in any of the outermost layers, it is preferred to form the adhesive layer 32 on the outermost layer containing the antistatic agent. According to the above operation, the film-forming integrated semiconductor back surface film 1 of the first aspect of the invention can be obtained. In the case where the film for semiconductor back surface 2 is thermally cured, it is important to perform thermal hardening to the extent that it is partially cured, but it is preferable not to perform thermal hardening.

The film-integrated semiconductor back surface film 1 of the first aspect of the invention can be suitably used in the production of a semiconductor device including a flip chip bonding step. In other words, the film 1 for dicing tape-integrated semiconductor back surface of the first aspect of the present invention is used in the manufacture of a flip-chip mounted semiconductor device. A flip-chip mounted semiconductor device is manufactured in a state or a form in which the film for semiconductor back surface 2 of the film-integrated semiconductor back surface film 1 is bonded to the back surface of the semiconductor element. Therefore, the dicing tape-integrated semiconductor back surface film 1 of the present invention can be used for flip-chip mounted semiconductor devices (semiconductor devices in which the semiconductor elements are fixed by flip-chip bonding to a state or form of an adherend such as a substrate) use.

(semiconductor wafer)

The semiconductor wafer is not particularly limited as long as it is a known or conventional semiconductor wafer, and can be appropriately selected from semiconductor wafers of various materials. In the first aspect of the invention, a germanium wafer can be suitably used as the semiconductor wafer.

(Method of Manufacturing Semiconductor Device)

A method of manufacturing a semiconductor device according to the first aspect of the present invention is the method of manufacturing a semiconductor device comprising at least the step of: attaching a semiconductor wafer to a subsequent sheet in the dicing tape-integrated sheet; and cutting the semiconductor crystal a step of forming a semiconductor element in a circle; and a step of picking up the semiconductor element from the adhesive layer of the dicing tape together with the above-mentioned succeeding sheet.

In particular, in the case where the adhesive sheet of the first aspect of the invention is a film for semiconductor back surface, the method for manufacturing the semiconductor device includes at least the step of: attaching a semiconductor wafer to the film for the dicing tape-integrated semiconductor back surface a step of backing; a step of cutting the semiconductor wafer; a step of picking up the obtained semiconductor element; and a step of flip-chip bonding the semiconductor element to the adherend.

Hereinafter, a method of manufacturing a semiconductor device of the present embodiment will be described with reference to FIG. 5. FIG. 5 is a cross-sectional schematic view showing an example of a method of manufacturing a semiconductor device using the dicing tape-integrated semiconductor back surface film 1 of the present embodiment.

[mounting step]

First, as shown in FIG. 5(a), the separator which is arbitrarily provided on the film 2 for semiconductor back surface of the film for dicing tape-integrated semiconductor back surface 1 is appropriately peeled off, and is used for the back surface of the semiconductor. The semiconductor wafer 4 is attached to the film 2 to be held and fixed (mounting step). At this time, the film 2 for semiconductor back surface is in an uncured state (including a semi-hardened state). Further, the film-integrated semiconductor back surface film 1 is placed on the back surface of the semiconductor wafer 4. The back surface of the semiconductor wafer 4 is a surface opposite to the circuit surface (also referred to as a non-circuit surface, a non-electrode forming surface, etc.). The bonding method is not particularly limited, and it is preferably a method using pressure bonding. The crimping is usually performed while pressing the pressing mechanism such as a pressure roller.

[Cutting step]

Then, as shown in FIG. 5(b), the semiconductor wafer 4 is cut. Thereby, the semiconductor wafer 4 is cut into a specific size to achieve singulation (small piece), and the semiconductor wafer 5 as a semiconductor element is manufactured. The cutting is performed in a state where the dicing tape 3 is vacuum-adsorbed to the adsorption stage 110, for example, from the circuit surface side of the semiconductor wafer 4 in accordance with a conventional method. Moreover, in this step, for example, a cutting method called a full cut which cuts into the film 1 for the dicing tape-integrated semiconductor back surface can be used. The cutting device used in this step is not particularly limited, and those known in the prior art can be used. In addition, since the semiconductor wafer 4 is then fixed to the film-integrated semiconductor back surface film 1 including the film for semiconductor back surface with more excellent adhesion, it is possible to suppress wafer defects or wafer flying out, and it is also possible to suppress semiconductor wafers. 4 damage. In addition, when the film 2 for semiconductor back surface is formed of a resin composition containing an epoxy resin, it is possible to suppress or prevent the occurrence of an adhesive layer of a film for semiconductor back surface on the cut surface thereof even if it is cut by dicing. The paste oozes out. As a result, it is possible to suppress or prevent the cut surfaces from reattaching (adhesion) to each other, and the pick-up described later can be performed more satisfactorily.

Further, in the case of expanding the film 1 for the dicing tape-integrated semiconductor back surface, the expansion can be carried out using a previously known expansion device. The expansion device includes a doughnut-shaped outer ring that can be pressed downward by the dicing tape-integrated semiconductor back surface film 1 through a dicing ring, and a film having a diameter smaller than the outer ring and supporting the dicing tape-integrated semiconductor back surface film. ring. By this expansion step, it is possible to prevent adjacent semiconductor wafers from coming into contact with each other and being damaged in the pickup step described later.

[pickup step]

In order to recover the semiconductor wafer 5 which is then fixed to the dicing tape-integrated semiconductor back surface film 1, as shown in FIG. 5(c), the semiconductor wafer 5 is picked up, and the semiconductor wafer 5 and the semiconductor back surface film 2 are self-cut. The ribbon 3 is peeled off. The method of picking up is not particularly limited, and various methods known in the prior art can be employed. For example, a method of picking up the semiconductor wafer 5 that has been topped by the pick-up device from the side of the substrate 31 of the film-integrated semiconductor back surface film 1 and the top of each of the semiconductor wafers 5 by the ejector is mentioned. Further, the back surface of the semiconductor wafer 5 to be picked up is protected by the film 2 for semiconductor back surface.

[Flip Chip Connection Step]

As shown in FIG. 5(d), the picked-up semiconductor wafer 5 is fixed to an adherend such as a substrate by flip chip bonding (flip-chip mounting). Specifically, the semiconductor wafer 5 is fixed to the adherend 6 by a circuit surface (also referred to as a surface, a circuit pattern forming surface, an electrode forming surface, and the like) of the semiconductor wafer 5 so as to face the adherend 6 in accordance with a conventional method. For example, the bump 51 formed on the circuit surface side of the semiconductor wafer 5 is brought into contact with a conductive material (solder or the like) 61 to be bonded to the bonding pad of the adherend 6, and the conductive material is melted while being pressed. This ensures electrical conduction between the semiconductor wafer 5 and the adherend 6, and the semiconductor wafer 5 can be fixed to the adherend 6 (flip-chip bonding step). At this time, a gap is formed between the semiconductor wafer 5 and the adherend 6, and the distance between the gaps is generally about 30 μm to 300 μm. Further, after flip-chip bonding (flip-chip bonding) of the semiconductor wafer 5 onto the adherend 6, it is important to clean the opposite surface or gap of the semiconductor wafer 5 and the adherend 6, and fill the gap with the gap. The material (sealing resin, etc.) is sealed.

As the adherend 6, various substrates such as a lead frame or a circuit board (such as a printed circuit board) can be used. The material of such a substrate is not particularly limited, and examples thereof include a ceramic substrate and a plastic substrate. As the plastic substrate, for example, an epoxy substrate or a bis-xenylene diimide III can be cited. A substrate, a polyimide substrate, or the like.

In the flip chip bonding step, there is no special material for the bump or conductive material. Examples of the limitation include tin-lead metal materials, tin-silver metal materials, tin-silver-copper metal materials, tin-zinc metal materials, and tin-zinc-bismuth metal materials such as solders (alloys). Or gold-based metal materials, copper-based metal materials, and the like.

Further, in the flip chip bonding step, the conductive material is melted to connect the bump on the circuit surface side of the semiconductor wafer 5 to the conductive material on the surface of the adherend 6, as the temperature at which the conductive material is melted, usually It is about 260 ° C (for example, 250 ° C ~ 300 ° C). In the film for a semiconductor back surface of the dicing tape-integrated semiconductor of the first aspect of the invention, a film for semiconductor back surface can be formed by using an epoxy resin or the like, and a heat resistance which can withstand the high temperature in the flip chip bonding step can be formed.

In this step, cleaning of the opposite surface (electrode forming surface) or gap of the semiconductor wafer 5 and the adherend 6 is preferably performed. The cleaning liquid used for the cleaning is not particularly limited, and examples thereof include an organic cleaning liquid or a water cleaning liquid. The film for semiconductor back surface of the film for dicing tape-integrated semiconductor back surface of the first aspect of the present invention has solvent resistance to a cleaning liquid, and has substantially no solubility to the cleaning liquid. Therefore, as described above, various cleaning liquids can be used as the cleaning liquid, and no special cleaning liquid is required, and the cleaning can be performed by the conventional method.

Then, a sealing step for sealing the gap between the wafer wafer 5 bonded by the flip chip and the adherend 6 is performed. The sealing step is performed using a sealing resin. The sealing condition at this time is not particularly limited, and the sealing resin is usually thermally cured by heating at 175 ° C for 60 seconds to 90 seconds. However, the first invention is not limited thereto, and may be, for example, 165 ° C. Curing was carried out at 185 ° C for several minutes. At this time, since the film 2 for semiconductor back surface contains 70% by weight or more of the inorganic filler with respect to the entire film 2 for semiconductor back surface, the tensile storage elastic modulus is relatively high. As a result, it is possible to effectively suppress or prevent warpage of the semiconductor wafer which may occur when the sealing resin is thermally hardened. Moreover, by this step, the film 2 for semiconductor back surface can be completely or substantially completely thermally cured, and can be adhered to the back surface of the semiconductor wafer with excellent adhesion. Further, the film 2 for semiconductor back surface of the first invention is uncured even if it is The state can also be thermally hardened together with the sealing material at the sealing step, so that it is not necessary to newly add a step for thermally hardening the film 2 for semiconductor back surface.

The sealing resin is not particularly limited as long as it is an insulating resin (insulating resin), and can be appropriately selected from known sealing materials such as a sealing resin, and more preferably an insulating resin having elasticity. The sealing resin may, for example, be a resin composition containing an epoxy resin. Examples of the epoxy resin include the epoxy resins exemplified above. In addition, the resin component may contain a thermosetting resin (such as a phenol resin) other than an epoxy resin or a thermoplastic resin, in addition to the epoxy resin, in addition to the epoxy resin. In addition, the phenol resin can also be used as a curing agent for an epoxy resin, and examples of such a phenol resin include the above-exemplified phenol resins.

In the semiconductor device (flip-chip mounted semiconductor device) manufactured by using the dicing tape-integrated semiconductor back surface film 1 described above, a film for semiconductor back surface is adhered to the back surface of the semiconductor wafer, so that various marks can be applied with excellent visibility. . In particular, even if the marking method is a laser marking method, it is possible to apply a mark with excellent contrast, and it is possible to satisfactorily recognize various kinds of information (text information, graphic research information, and the like) applied by the laser mark. Further, a known laser marking device can be used for laser marking. Further, as the laser, various kinds of lasers such as gas laser, solid laser, and liquid laser can be used. Specifically, the gas laser is not particularly limited, and a known gas laser can be used, and it is preferably carbon dioxide laser (CO ₂ laser) or excimer laser (ArF laser, KrF laser, XeCl laser, XeF laser, or the like). Further, the solid laser is not particularly limited, and a known solid laser can be used, and it is preferably YAG laser (Nd: YAG laser or the like) or YVO ₄ laser.

The semiconductor device manufactured by using the dicing tape-integrated semiconductor back surface film or the semiconductor back surface film of the first aspect of the invention is a flip-chip mounted semiconductor device, and thus is mounted by die bonding. Compared with a semiconductor device, it is formed into a shape that is thinner and smaller. Therefore, it can be used as a variety of electronic devices. Electronic parts or such materials. The member is suitably used. Specifically, as a flip chip using the first invention The electronic devices of the semiconductor device mounted on the chip include a so-called "mobile phone" or "PHS" (Personal Handy-phone System), and a small computer (for example, a so-called "PDA" (personal digital assistant) ), the so-called "notebook computer", the so-called "Netbook (trademark)", the so-called "wearable computer" (wearable computer), etc., the "mobile phone" and the computer integrated small electronic device, so-called "Digital Cameras (Trade Marks)", so-called "Digital Video Cameras", small TVs, small game consoles, small digital video players, so-called "electronic notebooks", so-called "electronic dictionaries", so-called " For electronic books, electronic devices such as electronic device terminals and small digital watches (portable electronic devices), etc., of course, electronic devices other than mobile devices (such as setting type) (for example, so-called " A desktop personal computer, a thin television, a video-playback electronic device (hard disk recorder, a DVD player, etc.), a projector, a micromachine, etc.). Also, as an electronic part, or an electronic device. Material for electronic parts. The members include, for example, members of a so-called "CPU" (Central Processing Unit), members of various memory devices (so-called "memory", hard disk, etc.).

In the above embodiment, the case where the subsequent sheet of the first invention is the film for flip chip type semiconductor back surface 2 has been described. However, the sheet of the first invention is not limited to this example. The back sheet of the first aspect of the invention is not particularly limited as long as it can be formed on the dicing tape, and examples thereof include a die bond film or an underfill sheet.

In the case where the adhesive sheet of the first invention is a die-bonding film, the composition or content can be changed to have a function as a die-bonding film, and the film can be used in the same manner as the above-mentioned film for flip chip type semiconductor back surface. The composition. Further, in the method of manufacturing a semiconductor device, instead of the above-described flip chip bonding step, a step of performing die bonding of a semiconductor element (for example, a semiconductor wafer) to an adherend via an adhesive film is performed, and The manufacturing method of the semiconductor device with the integrated film 1 for semiconductor back surface is the same. That is, a method of manufacturing a semiconductor device using a dicing tape-integrated die-bonding film includes the following steps: in a dicing tape a step of attaching a semiconductor wafer to the die-bonding film of the integrated die-bonding film; and cutting the semiconductor wafer to form a semiconductor component; and picking up the semiconductor component together with the die-bonding film from the adhesive layer of the dicing tape a step of: bonding the semiconductor element to the adherend via the above-mentioned die film;

Further, in the case where the succeeding sheet of the first invention is an underfill sheet, the flip chip type semiconductor can be used in addition to changing the composition or content to have a function as an underfill sheet. The film for the back surface is similarly constructed. In the mounting method of the semiconductor device, the dicing tape-integrated semiconductor back surface film 1 as a dicing tape-integrated sheet is placed on the back surface of the semiconductor wafer instead of the dicing tape-integrated sheet. Manufacture of a semiconductor device using a dicing tape-integrated semiconductor back surface film 1 in addition to the dicing tape-integrated underfill sheet of the dicing tape-integrated sheet. The method is the same. That is, a method of manufacturing a semiconductor device using a dicing tape-integrated underfill sheet includes the steps of: attaching a circuit surface side of a semiconductor wafer to an underfill sheet of a diced tape-integrated underfill sheet; a step of cutting the semiconductor wafer to form a semiconductor element; a step of picking up the semiconductor element from the adhesive layer of the dicing tape together with the underfill sheet; and placing the semiconductor element in the state of depositing the underfill sheet The step of flip chip bonding to the adherend.

<2nd invention>

Hereinafter, an embodiment different from the first invention will be described with respect to the second embodiment of the present invention. The diced tape-integrated sheet of the second aspect of the present invention can be configured in the same manner as in the first aspect of the invention, except that it is described in particular in the second aspect of the invention. Therefore, the description of the parts common to the first invention will be omitted.

(Cutting tape integrated semiconductor back surface film)

The embodiment of the dicing tape-integrated semiconductor back surface film of the second aspect of the invention (hereinafter, also referred to as the second embodiment), and the embodiment of the dicing tape-integrated semiconductor back surface film of the first aspect of the invention The same structure, that is, the dicing tape integrated type as shown in FIG. Film 1 for semiconductor back surface. Since the layer structure of the film 1 for the dicing tape-integrated semiconductor back surface has been described in the first aspect of the invention, the description thereof is omitted here.

In the film 1 for a dicing tape-integrated semiconductor back surface according to the second embodiment, the surface resistivity of at least one of the substrate 31 and the adhesive layer 32 is 1.0 × 10 ¹¹ Ω or less, preferably 1.0 ×. 10 ¹⁰ Ω or less, more preferably 1.0 × 10 ⁹ Ω or less.

In particular, when the substrate 31 contains an antistatic agent, the surface resistivity value of the surface of the substrate 31 is preferably 1.0 × 10 ¹¹ Ω or less, more preferably 1.0 × 10 ¹⁰ Ω or less, and further preferably 1.0 × 10 ⁹ Ω or less. In particular, when the substrate 31 has a multilayer structure and the antistatic agent is contained in at least one of the outermost layers of the substrate 31 of the multilayer structure, the surface resistivity of the surface of the outermost layer containing the antistatic agent is preferably It is 1.0 × 10 ¹¹ Ω or less, more preferably 1.0 × 10 ¹⁰ Ω or less, further preferably 1.0 × 10 ⁹ Ω or less.

Further, when the antistatic agent is contained in the adhesive layer 32, the surface resistivity value of the surface of the adhesive layer 32 is preferably 1.0 × 10 ¹¹ Ω or less, more preferably 1.0 × 10 ¹⁰ Ω or less, and further preferably It is 1.0 × 10 ⁹ Ω or less.

Further, when the antistatic agent is contained in both of the substrate 31 and the adhesive layer 32, the surface resistivity of the surface of the substrate 31 is preferably 1.0 × 10 ¹¹ Ω or less, more preferably 1.0 × 10 ¹⁰ Ω. Further, it is preferably 1.0 × 10 ⁹ Ω or less, and the surface resistivity value of the surface of the adhesive layer 32 is preferably 1.0 × 10 ¹¹ Ω or less, more preferably 1.0 × 10 ¹⁰ Ω or less, further preferably 1.0. ×10 ⁹ Ω or less.

Further, the surface resistivity value is preferably as small as possible, and examples thereof include 1.0 × 10 ⁵ Ω or more, 1.0 × 10 ⁶ Ω or more, and 1.0 × 10 ⁷ Ω or more. Since the surface resistivity value is 1.0 × 10 ¹¹ Ω or less, it is not easily charged. Therefore, it is more effective to exert an antistatic effect. Furthermore, in the present invention, the surface resistivity values of at least one of the substrate and the front adhesive layer refer to the surface of the adhesive layer side of the substrate, and the opposite side of the substrate and the adhesive layer. The surface resistivity value of at least one of the surface, the surface of the substrate side of the adhesive layer, and the surface of the adhesive layer opposite to the substrate. The surface resistivity value is a value measured by the method described in the examples.

In the peeling test of the film-integrated semiconductor back surface film 1 of the second embodiment at a peeling speed of 10 m/min and a peeling angle of 150°, the peeling force of the adhesive layer 32 and the succeeding sheet 2 is preferably 0.02 to 0.5 N. /20 mm, more preferably 0.02 to 0.3 N/20 mm, further preferably 0.02 to 0.2 N/20 mm. When the peeling force is 0.02 N/20 mm or more, the semiconductor wafer can be fixed at the time of dicing. Moreover, when the peeling force is 0.5 N/20 mm or less, the semiconductor element attached to the sheet 2 can be easily peeled off from the adhesive layer 32 at the time of picking up.

Further, in the film 1 for dicing tape-integrated semiconductor back surface of the second embodiment, the absolute value of the peeling static voltage when the adhesive layer 32 and the succeeding sheet 2 are peeled off is preferably 0.5 according to the conditions of the peeling test. Below kV (-0.5 kV to +0.5 kV), more preferably 0.3 kV or less (-0.3 kV to +0.3 kV), further preferably 0.2 kV or less (-0.2 kV to +0.2 kV). According to the conditions of the peeling test, when the absolute value of the peeling static voltage when the adhesive layer 32 and the adhesive sheet 2 are peeled off is 0.5 kV or less, the antistatic effect can be further exhibited. As a result, it is possible to prevent the semiconductor element from being broken due to the peeling of static electricity at the time of picking up, and the reliability as a device is improved.

<3rd invention>

Hereinafter, an embodiment different from the first invention will be described with respect to the third embodiment of the present invention. The diced tape-integrated sheet of the third aspect of the present invention can be configured in the same manner as the first invention except that it is described in particular in the third aspect of the invention. Therefore, the description of the parts common to the first invention will be omitted.

(Cutting tape integrated semiconductor back surface film)

The embodiment of the dicing tape-integrated semiconductor back surface film of the third aspect of the present invention (hereinafter also referred to as the third embodiment) is an embodiment of the film for dicing tape-integrated semiconductor back surface of the first aspect of the invention. In the same manner, the film 1 for dicing tape-integrated semiconductor back surface shown in Fig. 1 is used. The layer of the film 1 for the dicing tape-integrated semiconductor back surface is formed in the first 1 has been described in the item of the present invention, and thus the description thereof is omitted here.

The dicing tape-integrated semiconductor back surface film 1 of the third embodiment contains a polymer type antistatic agent in at least one of the base material 31 and the adhesive layer 32. In the film 1 for dicing tape-integrated semiconductor back surface, since at least one of the base material 31 and the adhesive layer 32 contains a polymer type antistatic agent, it is difficult to charge. Therefore, an antistatic effect can be exerted. Further, since a polymer type antistatic agent is used as an antistatic agent, it is less likely to bleed out from the substrate 31 or the adhesive layer 32. As a result, it is possible to suppress a decrease in the antistatic function caused by the passage of time. In particular, when the polymer type antistatic agent is contained in the substrate 31, it is possible to suppress the peeling static electricity between the substrate 31 and the adsorption stage when the adsorption stage of the fixed dicing tape 3 is removed. When the base material 31 has a multilayer structure and the polymer type antistatic agent is contained in the outermost layer on the side of the adhesive layer 32 of the base material 31 of the multilayer structure, both the base material 31 and the adhesive layer 32 can be suppressed. Static electricity. Further, when the polymer-type antistatic agent is contained in the outermost layer on the side opposite to the adhesive layer 32 of the substrate 31 of the multilayer structure, the peeling static electricity between the substrate 31 and the adsorption stage can be more effectively suppressed.

Further, a polymer type antistatic agent may be contained in the film 2 for semiconductor back surface. When the polymer type antistatic agent is contained in the film 2 for semiconductor back surface, it has an antistatic effect after peeling from the dicing tape 3. As a result, after the dicing tape 3 is peeled off, the destruction of the semiconductor element due to static electricity can also be suppressed. In particular, when the film 2 for semiconductor back surface has a multilayer structure and a polymer type antistatic agent is contained in the outermost layer on the side of the dicing tape 3 of the film 2 for semiconductor back surface of the multilayer structure, the adhesive can be further effectively suppressed. When the layer 32 is peeled off from the film 2 for semiconductor back surface, the static electricity is peeled off. Further, the polymer type antistatic agent is as described in the item of the first invention.

In the film 1 for a dicing tape-integrated semiconductor back surface according to the third embodiment, the surface resistivity of at least one of the substrate 31 and the adhesive layer 32 is preferably 1.0 × 10 ¹¹ Ω or less, more preferably 1.0 × 10 ¹⁰ Ω or less, further preferably 1.0 × 10 ⁹ Ω or less.

In particular, when the polymerizable antistatic agent is contained in the substrate 31, the surface resistivity of the surface of the substrate 31 is preferably 1.0 × 10 ¹¹ Ω or less, more preferably 1.0 × 10 ¹⁰ Ω or less. It is preferably 1.0 × 10 ⁹ Ω or less. In particular, when the substrate 31 has a multilayer structure and the polymer type antistatic agent is contained in at least one outermost layer of the substrate 31 of the multilayer structure, the surface of the outermost layer of the polymer type antistatic agent is contained. The surface resistivity value is preferably 1.0 × 10 ¹¹ Ω or less, more preferably 1.0 × 10 ¹⁰ Ω or less, still more preferably 1.0 × 10 ⁹ Ω or less.

When the polymer type antistatic agent is contained in the adhesive layer 32, the surface resistivity value of the surface of the adhesive layer 32 is preferably 1.0 × 10 ¹¹ Ω or less, more preferably 1.0 × 10 ¹⁰ Ω or less. Further, it is preferably 1.0 × 10 ⁹ Ω or less.

Further, when a polymer type antistatic agent is contained in both of the base material 31 and the adhesive layer 32, the surface resistivity value of the surface of the base material 31 is preferably 1.0 × 10 ¹¹ Ω or less, more preferably 1.0 ×. 10 ¹⁰ Ω or less, more preferably 1.0 × 10 ⁹ Ω or less, and the surface resistivity value of the surface of the adhesive layer 32 is preferably 1.0 × 10 ¹¹ Ω or less, more preferably 1.0 × 10 ¹⁰ Ω or less, and further Preferably, it is 1.0 × 10 ⁹ Ω or less.

Further, the surface resistivity value is preferably as small as possible, and examples thereof include 1.0 × 10 ⁵ Ω or more, 1.0 × 10 ⁶ Ω or more, and 1.0 × 10 ⁷ Ω or more. When the surface resistivity value is 1.0 × 10 ¹¹ Ω or less, charging is not easy. Therefore, the antistatic effect can be further exerted. Further, in the third invention, the surface resistivity value of at least one of the substrate and the front adhesive layer means the surface of the adhesive layer side of the substrate, and the substrate is opposite to the adhesive layer. The surface resistivity value of the surface of the side, the surface of the substrate side of the adhesive layer, and at least one of the surfaces of the adhesive layer opposite to the substrate. The surface resistivity value is a value measured by the method described in the examples.

In the peeling test of the film-integrated semiconductor back surface film 1 of the third embodiment at a peeling speed of 10 m/min and a peeling angle of 150°, the peeling force of the adhesive layer 32 and the succeeding sheet 2 is preferably 0.02 to 0.5 N. /20 mm, more preferably 0.02 to 0.3 N/20 mm, further preferably 0.02 to 0.2 N/20 mm. If the peeling force is 0.02 N/20 mm or more, the cutting is performed. At the time, the semiconductor wafer can be fixed. Moreover, when the peeling force is 0.5 N/20 mm or less, the semiconductor element attached to the sheet 2 can be easily peeled off from the adhesive layer 32 at the time of picking up.

Further, in the film 1 for dicing tape-integrated semiconductor back surface of the third embodiment, the absolute value of the peeling static voltage when the adhesive layer 32 and the succeeding sheet 2 are peeled off is preferably 0.5 according to the conditions of the peeling test. Below kV (-0.5 kV to +0.5 kV), more preferably 0.3 kV or less (-0.3 kV to +0.3 kV), further preferably 0.2 kV or less (-0.2 kV to +0.2 kV). According to the conditions of the peeling test, when the absolute value of the peeling static voltage when the adhesive layer 32 and the adhesive sheet 2 are peeled off is 0.5 kV or less, the antistatic effect can be further exhibited. As a result, it is possible to prevent the semiconductor element from being broken due to the peeling of static electricity at the time of picking up, and the reliability as a device is improved.

<4th invention>

Hereinafter, an embodiment different from the first invention will be described with respect to the fourth embodiment of the present invention. The diced tape-integrated sheet of the fourth aspect of the present invention can be configured in the same manner as the first aspect of the invention, except that it is described in particular in the fourth aspect of the invention. Therefore, the description of the parts common to the first invention will be omitted.

(Cutting tape integrated semiconductor back surface film)

In the embodiment of the dicing tape-integrated semiconductor back surface film of the fourth aspect of the invention (hereinafter also referred to as the fourth embodiment), the embodiment of the dicing tape-integrated semiconductor back surface film of the first aspect of the invention is exemplified. In the same manner, the film 1 for dicing tape-integrated semiconductor back surface shown in Fig. 1 is used. Since the layer structure of the film 1 for the dicing tape-integrated semiconductor back surface has been described in the first aspect of the invention, the description thereof is omitted here.

The surface resistivity of any surface of the film 2 for semiconductor back surface of the fourth embodiment is 1.0 × 10 ¹¹ Ω or less, preferably 1.0 × 10 ¹⁰ Ω or less, more preferably 1.0 × 10 ⁹ Ω or less. When the film 2 for semiconductor back surface has a multilayer structure and the antistatic agent is contained in any of the outermost layers, the surface resistivity of the surface of the outermost layer containing the antistatic agent is preferably 1.0 × 10 ¹¹ Ω or less. It is preferably 1.0 × 10 ¹⁰ Ω or less, more preferably 1.0 × 10 ⁹ Ω or less. Further, the surface resistivity value is preferably as small as possible, and examples thereof include 1.0 × 10 ⁵ Ω or more, 1.0 × 10 ⁶ Ω or more, and 1.0 × 10 ⁷ Ω or more. Since the surface resistivity value is 1.0 × 10 ¹¹ Ω or less, it is not easily charged. Therefore, it is more effective to exert an antistatic effect. The surface resistivity value is a value measured by the method described in the examples.

In the peeling test of the film-integrated semiconductor back surface film 1 of the fourth embodiment at a peeling speed of 10 m/min and a peeling angle of 150°, the peeling force of the adhesive layer 32 and the succeeding sheet 2 is preferably 0.02 to 0.5 N. /20 mm, more preferably 0.02 to 0.3 N/20 mm, further preferably 0.02 to 0.2 N/20 mm. When the peeling force is 0.02 N/20 mm or more, the semiconductor wafer can be fixed at the time of dicing. Moreover, when the peeling force is 0.5 N/20 mm or less, the semiconductor element attached to the sheet 2 can be easily peeled off from the adhesive layer 32 at the time of picking up.

Further, in the film 1 for dicing tape-integrated semiconductor back surface of the fourth embodiment, the absolute value of the peeling static voltage when the adhesive layer 32 and the succeeding sheet 2 are peeled off is preferably 0.5 according to the conditions of the peeling test. Below kV (-0.5 kV to +0.5 kV), more preferably 0.3 kV or less (-0.3 kV to +0.3 kV), further preferably 0.2 kV or less (-0.2 kV to +0.2 kV). According to the conditions of the peeling test, when the absolute value of the peeling static voltage when the adhesive layer 32 and the adhesive sheet 2 are peeled off is 0.5 kV or less, the antistatic effect can be further exhibited. As a result, it is possible to prevent the semiconductor element from being broken due to the peeling of static electricity at the time of picking up, and the reliability as a device is improved.

When the film 2 for semiconductor back surface of the fourth embodiment is not laminated on the dicing tape 3, the film for semiconductor back surface 2 can be wound into a roll shape by using a separator having a peeling layer on both sides. The separator is provided on both sides with a release layer for protection, and may also be protected by a separator comprising a release layer on at least one side.

In addition, the film 2 for semiconductor back surface of the fourth embodiment can be attached to a flip-chip mounted semiconductor device by attaching it to a dicing tape in the same manner as the dicing tape-integrated semiconductor back surface film 1 . The semiconductor wafer is used in a semiconductor device in a state or a state in which the semiconductor wafer is fixed to an adherend such as a substrate by flip chip bonding.

In the case of manufacturing a semiconductor device using a film for flip chip type semiconductor back surface (for example, film 2 for semiconductor back surface), the semiconductor device can be used in the case of using the film 1 for dicing tape-integrated semiconductor back surface. A semiconductor device is manufactured by the method of the manufacturing method. That is, the method of manufacturing a semiconductor device according to the fourth aspect of the present invention is a method of manufacturing a semiconductor device including at least a step of preparing a dicing tape in which an adhesive layer is laminated on a substrate; and the above-mentioned adhesive in the dicing tape a step of attaching the above-mentioned succeeding sheet to the layer to obtain a diced strip-integrated sheet; and a step of attaching a semiconductor wafer to the succeeding sheet in the dicing strip-integrated sheet; cutting the semiconductor wafer And a step of forming a semiconductor element; and picking up the semiconductor element from the adhesive layer of the dicing tape together with the succeeding sheet.

In particular, in the case where the adhesive sheet of the fourth aspect of the invention is a film for semiconductor back surface, the method for producing the semiconductor device includes at least the step of preparing a dicing tape having an adhesive layer laminated on a substrate; The film for semiconductor back surface is attached to the adhesive layer of the dicing tape to obtain a film for a dicing tape-integrated semiconductor back surface; and the back surface of the semiconductor wafer is attached to the film for the dicing tape-integrated semiconductor back surface a step of cutting the semiconductor wafer; a step of picking up the obtained semiconductor element; and a step of flip-chip bonding the semiconductor element to the adherend.

<5th invention>

Hereinafter, an embodiment different from the first invention will be described with respect to the fifth embodiment of the present invention. The diced tape-integrated sheet of the fifth aspect of the present invention can be configured in the same manner as in the first aspect of the invention, except that it is described in particular in the fifth aspect of the invention. Therefore, the description of the parts common to the first invention will be omitted.

(Cutting tape integrated semiconductor back surface film)

An embodiment of the film for a dicing tape-integrated semiconductor back surface according to the fifth aspect of the present invention In the fifth embodiment, the dicing tape-integrated semiconductor back surface film of the first embodiment of the present invention has the same configuration as that of the first embodiment. Use membrane 1. Since the layer structure of the film 1 for the dicing tape-integrated semiconductor back surface has been described in the first aspect of the invention, the description thereof is omitted here.

The film for semiconductor back surface 2 of the fifth embodiment contains a polymer type antistatic agent. Since the polymer type antistatic agent is contained in the film 2 for semiconductor back surface, it is hard to charge. Moreover, since a polymer type antistatic agent is used as an antistatic agent, it is hard to bleed out from the film 2 for semiconductor back surface. As a result, it is possible to suppress a decrease in the antistatic function caused by the passage of time. In addition, since the polymer-type antistatic agent is contained in the film 2 for semiconductor back surface, when it is attached to a dicing tape and used as a dicing tape-integrated sheet, it also has an antistatic effect after being peeled off from the dicing tape. . As a result, the destruction of the semiconductor element due to static electricity can be suppressed even after the dicing tape is peeled off. In particular, when the film 2 for semiconductor back surface has a multilayer structure and a polymer type antistatic agent is contained in the outermost layer on the side of the dicing tape 3 of the film 2 for semiconductor back surface of the multilayer structure, the adhesive can be further effectively suppressed. When the layer 32 is peeled off from the film 2 for semiconductor back surface, the static electricity is peeled off.

Further, the film-integrated semiconductor back surface film 1 may contain a polymer type antistatic agent in at least one of the substrate 31 and the adhesive layer 32. When at least one of the base material 31 and the adhesive layer 32 contains a polymer type antistatic agent, it is more difficult to charge. Therefore, the antistatic effect can be further exerted. Further, since a polymer type antistatic agent is used as an antistatic agent, it is less likely to bleed out from the substrate 31 or the adhesive layer 32. As a result, it is possible to suppress a decrease in the antistatic function caused by the passage of time. In particular, when the polymer type antistatic agent is contained in the substrate 31, it is possible to suppress the peeling static electricity between the substrate 31 and the adsorption stage when the adsorption stage of the fixed dicing tape 3 is removed. When the base material 31 has a multilayer structure and the polymer type antistatic agent is contained in the outermost layer on the side of the adhesive layer 32 of the base material 31 of the multilayer structure, both the base material 31 and the adhesive layer 32 can be suppressed. Static electricity. Further, if a polymer type antistatic agent is contained in the outermost layer of the substrate 31 of the multilayer structure opposite to the adhesive layer 32, it is possible to further The peeling static electricity between the substrate 31 and the adsorption stage is effectively suppressed. Further, the polymer type antistatic agent is as described in the item of the first invention.

The surface resistivity value of any surface of the film 2 for semiconductor back surface of the fifth embodiment is preferably 1.0 × 10 ¹¹ Ω or less, more preferably 1.0 × 10 ¹⁰ Ω or less, still more preferably 1.0 × 10 ⁹ Ω or less. When the film 2 for semiconductor back surface has a multilayer structure and the polymer type antistatic agent is contained in any of the outermost layers, the surface resistivity value of the surface of the outermost layer containing the polymer type antistatic agent is preferably 1.0 ×. 10 ¹¹ Ω or less, more preferably 1.0 × 10 ¹⁰ Ω or less, further preferably 1.0 × 10 ⁹ Ω or less. Further, the surface resistivity value is preferably as small as possible, and examples thereof include 1.0 × 10 ⁵ Ω or more, 1.0 × 10 ⁶ Ω or more, and 1.0 × 10 ⁷ Ω or more. When the surface resistivity value is 1.0 × 10 ¹¹ Ω or less, charging is not easy. Therefore, it is more effective to exert an antistatic effect. The surface resistivity value is a value measured by the method described in the examples.

In the peeling test of the film-integrated semiconductor back surface film 1 of the fifth embodiment at a peeling speed of 10 m/min and a peeling angle of 150°, the peeling force of the adhesive layer 32 and the succeeding sheet 2 is preferably 0.02 to 0.5 N. /20 mm, more preferably 0.02 to 0.3 N/20 mm, further preferably 0.02 to 0.2 N/20 mm. When the peeling force is 0.02 N/20 mm or more, the semiconductor wafer can be fixed at the time of dicing. Moreover, when the peeling force is 0.5 N/20 mm or less, the semiconductor element attached to the sheet 2 can be easily peeled off from the adhesive layer 32 at the time of picking up.

Further, in the film 1 for dicing tape-integrated semiconductor back surface of the fifth embodiment, the absolute value of the peeling static voltage when the adhesive layer 32 and the succeeding sheet 2 are peeled off is preferably 0.5 according to the conditions of the peeling test. Below kV (-0.5 kV to +0.5 kV), more preferably 0.3 kV or less (-0.3 kV to +0.3 kV), further preferably 0.2 kV or less (-0.2 kV to +0.2 kV). According to the conditions of the peeling test, when the absolute value of the peeling static voltage when the adhesive layer 32 and the adhesive sheet 2 are peeled off is 0.5 kV or less, the antistatic effect can be more exhibited. As a result, it is possible to prevent the semiconductor element from being broken due to the peeling of static electricity at the time of picking up, and the reliability as a device is improved.

When the film 2 for semiconductor back surface of the fifth embodiment is not laminated on the dicing tape 3, the film for semiconductor back surface 2 can be wound into a roll shape by using one separator having a peeling layer on both sides. The separator is provided on both sides with a release layer for protection, and may also be protected by a separator comprising a release layer on at least one side.

In addition, the semiconductor back surface film 2 of the fifth embodiment can be attached to the dicing tape, and can be mounted on a flip-chip mounted semiconductor device (the semiconductor wafer is poured down) similarly to the dicing tape-integrated semiconductor back surface film 1 It is used by a semiconductor device in which a wafer bonding method is fixed to a state or a form of an adherend such as a substrate.

In the case of manufacturing a semiconductor device using a film for flip chip type semiconductor back surface (for example, film 2 for semiconductor back surface), the semiconductor device can be used in the case of using the film 1 for dicing tape-integrated semiconductor back surface. A semiconductor device is manufactured by the method of the manufacturing method. That is, the method of manufacturing a semiconductor device according to a fifth aspect of the present invention is a method of manufacturing a semiconductor device comprising at least a step of preparing a dicing tape in which an adhesive layer is laminated on a substrate; and the above-mentioned adhesive in the dicing tape a step of attaching the above-mentioned succeeding sheet to the layer to obtain a diced strip-integrated sheet; and a step of attaching a semiconductor wafer to the succeeding sheet in the dicing strip-integrated sheet; cutting the semiconductor wafer And a step of forming a semiconductor element; and picking up the semiconductor element from the adhesive layer of the dicing tape together with the succeeding sheet.

In particular, in the case where the adhesive sheet of the fifth aspect of the invention is a film for semiconductor back surface, the method for producing the semiconductor device includes at least the step of preparing a dicing tape having an adhesive layer laminated on a substrate; The film for semiconductor back surface is attached to the adhesive layer of the dicing tape to obtain a film for a dicing tape-integrated semiconductor back surface; and the back surface of the semiconductor wafer is attached to the film for the dicing tape-integrated semiconductor back surface a step of cutting the semiconductor wafer; a step of picking up the obtained semiconductor element; and a step of flip-chip bonding the semiconductor element to the adherend.

[Examples]

Hereinafter, preferred embodiments of the invention will be described in detail. However, the materials, the blending amounts, and the like described in the examples are not intended to limit the scope of the invention to those of the invention, unless otherwise specified. Further, parts represent parts by weight.

Examples 1 to 23 correspond to the first invention.

Examples 1 to 5 and Examples 13 to 17 correspond to the second invention and the third invention.

Examples 6 to 7 and Examples 18 to 20 correspond to the fourth invention and the fifth invention.

(Example 1) <Production of dicing tape>

First, a substrate having a three-layer structure was produced. The basis of the outermost layer (thickness: 20 μm, polyolefin-based substrate), the intermediate layer (thickness: 40 μm, polyolefin-based substrate), and the innermost layer (thickness: 40 μm, polyolefin-based substrate) were laminated. Material (sometimes referred to as "layered substrate A"). In addition, in the outermost layer, the product name of the antistatic agent is contained in the outermost layer of the outermost layer: PELESTAT (manufactured by Sanyo Chemical Co., Ltd.), 30% by weight. Further, in the present embodiment, the innermost layer means a layer on which an adhesive layer is formed, and the outermost layer means a layer on the side opposite to the side on which the adhesive layer is formed.

Then, 88.8 parts of 2-ethylhexyl acrylate (hereinafter referred to as "2EHA") and 2-hydroxyethyl acrylate (hereinafter referred to as "2EHA") were placed in a reaction vessel equipped with a condenser, a nitrogen gas introduction tube, a thermometer, and a stirring device. 11.2 parts of "HEA", 0.2 parts of benzamidine peroxide, and 65 parts of toluene were subjected to polymerization treatment at 61 ° C for 6 hours in a nitrogen gas stream to obtain an acrylic polymer A having a weight average molecular weight of 850,000. The molar ratio of 2EHA to HEA was set to 100 mol: 20 mol.

12 parts of 2-propenylmethoxyethyl isocyanate (hereinafter referred to as "MOI") (80 mol% with respect to HEA) was added to the acrylic polymer A, and an addition reaction was carried out at 50 ° C for 48 hours in an air stream. The acrylic polymer A' was obtained by treatment.

Then, a polyisocyanate compound (trade name "CORONATE L", manufactured by Nippon Polyurethane Co., Ltd.) was added to 100 parts of the acrylic polymer A'. 5 parts of a photopolymerization initiator (trade name "IRGACURE 651", manufactured by Ciba Specialty Chemicals Co., Ltd.) was prepared to prepare an adhesive solution (sometimes referred to as "adhesive solution A").

The adhesive solution A prepared above was applied onto a surface of a PET release liner which was subjected to polyfluorination treatment, and heat-crosslinked at 120 ° C for 2 minutes to form an adhesive layer having a thickness of 30 μm. Then, the adhesive layer was bonded to the innermost layer of the laminated substrate A, and stored at 50 ° C for 24 hours. Then, an ultraviolet ray irradiation device (manufactured by Nitto Seiki Co., Ltd., trade name, UM-810) is used for the region in which the semiconductor wafer is mounted, and ultraviolet rays of 300 mJ/cm ^{2 are} irradiated from the side of the laminated substrate A to obtain a dicing film (sometimes called "Cutting Tape A").

<Next sheet production>

An epoxy resin (trade name "product name" is used for 100 parts of acrylate-based polymer (trade name "Paracron W-197CM", manufactured by Gensei Industrial Co., Ltd.) containing ethyl acrylate-methyl methacrylate as a main component. EPIKOTE 1004", manufactured by JER Co., Ltd.): 113 parts, phenol resin (trade name "Milex XLC-4L", manufactured by Mitsui Chemicals, Inc.): 121 parts, spherical cerium oxide (trade name "SO-25R" , manufactured by ADMATECHS Co., Ltd.): 246 parts, dye 1 (trade name "OIL GREEN 502", manufactured by ORIENT CHEMICAL INDUSTRIES Co., Ltd.): 5 parts, dye 2 (trade name "OIL BLACK BS", limited stock of ORIENT CHEMICAL INDUSTRIES Manufactured by the company: 5 parts were dissolved in methyl ethyl ketone to prepare an adhesive composition solution A having a solid content concentration of 23.6% by weight.

The adhesive composition solution A is applied onto a release-treated film formed of a poly(ethylene terephthalate) film having a thickness of 50 μm which is subjected to polysilicon-oxygen release treatment as a release liner (separator), and then The film was dried at 130 ° C for 2 minutes to prepare a sheet A having a thickness (average thickness) of 20 μm.

<Production of dicing tape integrated type and subsequent sheet>

Using the hand roller, the bonding sheet A is attached to the adhesive layer of the dicing tape A, and is produced. The dicing tape integrated type is followed by the sheet A.

(Example 2) <Production of dicing tape>

First, a substrate having a three-layer structure was produced. The basis of the outermost layer (thickness: 20 μm, polyolefin-based substrate), the intermediate layer (thickness: 40 μm, polyolefin-based substrate), and the innermost layer (thickness: 40 μm, polyolefin-based substrate) were laminated. Material (sometimes referred to as "layered substrate B"). In addition, in the outermost layer, the product name of the antistatic agent was contained in the outermost layer of the outermost layer: PELESTAT (manufactured by Sanyo Chemical Co., Ltd.) of 25% by weight.

As the adhesive solution, the above adhesive solution A was used.

The adhesive solution A prepared above was applied onto a surface of a PET release liner which was subjected to polyfluorination treatment, and heat-crosslinked at 120 ° C for 2 minutes to form an adhesive layer having a thickness of 30 μm. Then, the adhesive layer was bonded to the innermost layer of the laminated substrate B, and stored at 50 ° C for 24 hours. Then, an ultraviolet ray irradiation device (Nitto Seiki Co., Ltd., trade name, UM-810) was used for the region in which the semiconductor wafer was mounted, and ultraviolet rays of 300 mJ/cm ^{2 were} irradiated from the side of the laminated substrate B to obtain a dicing film (sometimes called "Cutting Tape B").

<Next sheet production>

As the subsequent sheet, the same sheet A as in Example 1 was used.

<Production of dicing tape integrated type and subsequent sheet>

The bonding sheet A was bonded to the adhesive layer of the dicing tape B using a hand roll, and a dicing tape-integrated type sheet B was produced.

(Example 3) <Production of dicing tape>

First, a substrate having a three-layer structure was produced. The basis of the outermost layer (thickness: 20 μm, polyolefin-based substrate), the intermediate layer (thickness: 40 μm, polyolefin-based substrate), and the innermost layer (thickness: 40 μm, polyolefin-based substrate) were laminated. Material (sometimes referred to as "layered substrate C"). Furthermore, in the outermost layer, it is contained as an antistatic against all the resin components of the outermost layer. Product name of the agent: PELESTAT (manufactured by Sanyo Chemical Co., Ltd.) 20% by weight.

As the adhesive solution, the above adhesive solution A was used.

The adhesive solution A prepared above was applied onto a surface of a PET release liner which was subjected to polyfluorination treatment, and heat-crosslinked at 120 ° C for 2 minutes to form an adhesive layer having a thickness of 30 μm. Then, the adhesive layer was bonded to the innermost layer of the laminated substrate C, and stored at 50 ° C for 24 hours. Then, an ultraviolet ray irradiation device (manufactured by Nitto Seiki Co., Ltd., trade name, UM-810) is used for the region in which the semiconductor wafer is mounted, and ultraviolet rays of 300 mJ/cm ^{2 are} irradiated from the side of the laminated substrate C to obtain a dicing film (sometimes called "Cutting Tape C").

<Next sheet production>

As the subsequent sheet, the same sheet A as in Example 1 was used.

<Production of dicing tape integrated type and subsequent sheet>

The bonding sheet A was bonded to the adhesive layer of the dicing tape C using a hand roll, and a dicing tape-integrated type sheet C was produced.

(Example 4) <Production of dicing tape>

First, a substrate having a three-layer structure was produced. The basis of the outermost layer (thickness: 20 μm, polyolefin-based substrate), the intermediate layer (thickness: 40 μm, polyolefin-based substrate), and the innermost layer (thickness: 40 μm, polyolefin-based substrate) were laminated. Material (sometimes referred to as "layered substrate D").

Then, the antistatic agent layer-forming solution D was applied onto the outermost layer, and then dried by heating at 60 ° C for 1 minute to form an antistatic agent layer having a thickness of about 100 nm. Further, the antistatic agent layer-forming solution D was prepared by using a product name: SEPLEGYDA (Compound Name: Polythiophene) as an antistatic agent, and dispersing it in a methyl ethyl ketone (MEK) solvent at a concentration of 1%.

Then, as the adhesive solution, the above-mentioned adhesive solution A was used.

The adhesive solution A prepared above was applied onto a surface of a PET release liner which was subjected to polyfluorination treatment, and heat-crosslinked at 120 ° C for 2 minutes to form an adhesive layer having a thickness of 30 μm. Then, the adhesive layer was bonded to the innermost layer of the laminated substrate D, and stored at 50 ° C for 24 hours. Then, an ultraviolet ray irradiation device (manufactured by Nitto Seiki Co., Ltd., trade name, UM-810) is used for the region in which the semiconductor wafer is mounted, and ultraviolet rays of 300 mJ/cm ^{2 are} irradiated from the side of the laminated substrate D to obtain a dicing film (sometimes called "Cutting Tape D"). The dicing tape D is formed with an antistatic agent layer on the outermost layer of the substrate.

<Next sheet production>

As the subsequent sheet, the same sheet A as in Example 1 was used.

<Production of dicing tape integrated type and subsequent sheet>

The bonding sheet A was bonded to the adhesive layer of the dicing tape D using a hand roller, and a dicing tape-integrated sheet D was produced.

(Example 5) <Production of dicing tape>

First, a substrate having a three-layer structure was produced. The basis of the outermost layer (thickness: 20 μm, polyolefin-based substrate), the intermediate layer (thickness: 40 μm, polyolefin-based substrate), and the innermost layer (thickness: 40 μm, polyolefin-based substrate) were laminated. Material (sometimes referred to as "layered substrate E").

Then, the solution E for forming an antistatic agent layer was applied onto the outermost layer, and then dried by heating at 60 ° C for 1 minute to form an antistatic agent layer having a thickness of about 50 nm. The solution E for forming an antistatic agent layer was prepared by using a product name: SEPLEGYDA (Compound Name: Polythiophene) as an antistatic agent, and dispersing it in a MEK solvent at a concentration of 1%.

Then, as the adhesive solution, the above-mentioned adhesive solution A was used.

The adhesive solution A prepared above was applied onto a surface of a PET release liner which was subjected to polyfluorination treatment, and heat-crosslinked at 120 ° C for 2 minutes to form an adhesive layer having a thickness of 30 μm. Then, the adhesive layer was bonded to the innermost layer of the laminated substrate E, and stored at 50 ° C for 24 hours. Then, an ultraviolet ray irradiation device (manufactured by Nitto Seiki Co., Ltd., trade name, UM-810) is used for the region in which the semiconductor wafer is mounted, and ultraviolet rays of 300 mJ/cm ^{2 are} irradiated from the side of the laminated substrate E to obtain a dicing film (sometimes called "Cutting Tape E"). The dicing tape E is formed with an antistatic agent layer on the outermost layer of the substrate.

<Next sheet production>

As the subsequent sheet, the same sheet A as in Example 1 was used.

<Production of dicing tape integrated type and subsequent sheet>

The bonding sheet A was bonded to the adhesive layer of the dicing tape E using a hand roller, and a dicing tape-integrated sheet E was produced.

(Example 6) <Production of dicing tape>

First, a substrate having a three-layer structure was produced. The basis of the outermost layer (thickness: 20 μm, polyolefin-based substrate), the intermediate layer (thickness: 40 μm, polyolefin-based substrate), and the innermost layer (thickness: 40 μm, polyolefin-based substrate) were laminated. Material (sometimes referred to as "layered substrate F").

Then, as the adhesive solution, the above-mentioned adhesive solution A was used.

The adhesive solution A prepared above was applied onto a surface of a PET release liner which was subjected to polyfluorination treatment, and heat-crosslinked at 120 ° C for 2 minutes to form an adhesive layer having a thickness of 30 μm. Then, the adhesive layer was bonded to the innermost layer of the laminated substrate F, and stored at 50 ° C for 24 hours. Then, an ultraviolet ray irradiation device (manufactured by Nitto Seiki Co., Ltd., trade name, UM-810) was used for the region in which the semiconductor wafer was mounted, and ultraviolet rays of 300 mJ/cm ^{2 were} irradiated from the side of the laminated substrate F to obtain a dicing film (sometimes called "Cutting Tape F").

<Next sheet production>

An epoxy resin (trade name "product name" is used for 100 parts of acrylate-based polymer (trade name "Paracron W-197CM", manufactured by Gensei Industrial Co., Ltd.) containing ethyl acrylate-methyl methacrylate as a main component. EPIKOTE 1004", manufactured by JER Co., Ltd.): 113 parts, phenol resin (trade name "Milex XLC-4L", manufactured by Mitsui Chemicals, Inc.): 121 parts, spherical cerium oxide (trade name "SO-25R" , manufactured by ADMATECHS Co., Ltd.): 246 parts, dye 1 (trade name "OIL GREEN 502", manufactured by ORIENT CHEMICAL INDUSTRIES Co., Ltd.): 5 parts, dye 2 (trade name "OIL BLACK BS", manufactured by ORIENT CHEMICAL INDUSTRIES CO., LTD.): 5 parts and 30% by weight of all resin components as an antistatic agent. Product name: PELESTAT (manufactured by Sanyo Chemical Co., Ltd.) dissolved in In methyl ethyl ketone, an adhesive composition solution F having a solid content concentration of 23.6% by weight (excluding an antistatic agent) was prepared.

The adhesive composition solution F is applied onto a release-treated film formed of a polyethylene terephthalate film having a thickness of 50 μm which is subjected to polysilicon oxide release treatment as a release liner (separator), and then After drying at 130 ° C for 2 minutes, the thickness (average thickness) was 20 μm, and the product name of the product as an antistatic agent was contained in an amount of 30% by weight of PELESTAT (manufactured by Sanyo Chemical Co., Ltd.). .

<Production of dicing tape integrated type and subsequent sheet>

The bonding sheet F was bonded to the adhesive layer of the dicing tape F using a hand roller, and a dicing tape-integrated sheet F was produced.

(Example 7) <Production of dicing tape>

First, a substrate having a three-layer structure was produced. The basis of the outermost layer (thickness: 20 μm, polyolefin-based substrate), the intermediate layer (thickness: 40 μm, polyolefin-based substrate), and the innermost layer (thickness: 40 μm, polyolefin-based substrate) were laminated. Material (sometimes referred to as "layered substrate G").

Then, as the adhesive solution, the above-mentioned adhesive solution A was used.

The adhesive solution A prepared above was applied onto a surface of a PET release liner which was subjected to polyfluorination treatment, and heat-crosslinked at 120 ° C for 2 minutes to form an adhesive layer having a thickness of 30 μm. Then, the adhesive layer was bonded to the innermost layer of the laminated substrate G, and stored at 50 ° C for 24 hours. Then, an ultraviolet ray irradiation device (manufactured by Nitto Seiki Co., Ltd., trade name, UM-810) is used for the region in which the semiconductor wafer is mounted, and ultraviolet rays of 300 mJ/cm ^{2 are} irradiated from the side of the laminated substrate G to obtain a dicing film (sometimes called "Cutting Tape G").

<Next sheet production>

An epoxy resin (trade name "product name" is used for 100 parts of acrylate-based polymer (trade name "Paracron W-197CM", manufactured by Gensei Industrial Co., Ltd.) containing ethyl acrylate-methyl methacrylate as a main component. EPIKOTE 1004", manufactured by JER Co., Ltd.): 113 parts, phenol resin (trade name "Milex XLC-4L", manufactured by Mitsui Chemicals, Inc.): 121 parts, spherical cerium oxide (trade name "SO-25R" , manufactured by ADMATECHS Co., Ltd.): 246 parts, dye 1 (trade name "OIL GREEN 502", manufactured by ORIENT CHEMICAL INDUSTRIES Co., Ltd.): 5 parts, dye 2 (trade name "OIL BLACK BS", limited stock of ORIENT CHEMICAL INDUSTRIES Manufactured by the company: 5 parts, and 25% by weight of the total resin component as an antistatic agent: PELESTAT (manufactured by Sanyo Chemical Co., Ltd.) dissolved in methyl ethyl ketone to prepare a solid content of 23.6 by weight. % (without antistatic agent) of the binder composition solution G.

The adhesive composition solution G is applied onto a release-treated film formed of a polyethylene terephthalate film having a thickness of 50 μm which is subjected to polysilicon-oxygen release treatment as a release liner (separator), and then After drying at 130 ° C for 2 minutes, the thickness (average thickness) was 20 μm, and the product name of the product as an antistatic agent was contained in an amount of 25% by weight of PELESTAT (manufactured by Sanyo Chemical Co., Ltd.). .

<Production of dicing tape integrated type and subsequent sheet>

The bonding sheet G was bonded to the adhesive layer of the dicing tape G using a hand roller, and a dicing tape-integrated sheet G was produced.

(Example 8) <Production of dicing tape integrated type and subsequent sheet>

The adhesive sheet F produced in Example 6 was bonded to the adhesive layer of the dicing tape A produced in Example 1 by using a hand roll to prepare a diced tape-integrated sheet H.

(Example 9) <Production of dicing tape integrated type and subsequent sheet>

The adhesive sheet G produced in Example 7 was bonded to the adhesive layer of the dicing tape B produced in Example 2 by using a hand roll, and a dicing tape-integrated sheet I was produced.

(Embodiment 10) <Production of dicing tape integrated type and subsequent sheet>

The adhesive sheet F produced in Example 6 was bonded to the adhesive layer of the dicing tape D produced in Example 4 by using a hand roll, and a diced tape-integrated sheet J was produced.

(Example 11) <Production of dicing tape>

First, a substrate having a three-layer structure was produced. The basis of the outermost layer (thickness: 20 μm, polyolefin-based substrate), the intermediate layer (thickness: 40 μm, polyolefin-based substrate), and the innermost layer (thickness: 40 μm, polyolefin-based substrate) were laminated. Material (sometimes referred to as "layered substrate K").

Then, the adhesive solution K was prepared in the same manner as the above-mentioned adhesive solution A, except that the product name of the antistatic agent: PELESTAT (manufactured by Sanyo Chemical Co., Ltd.) was added in an amount of 30% by weight.

The adhesive solution K prepared above was applied onto a surface of a PET release liner which was subjected to polyfluorination treatment, and heat-crosslinked at 120 ° C for 2 minutes to form an adhesive layer having a thickness of 30 μm. Then, the adhesive layer was bonded to the innermost layer of the laminated substrate K, and stored at 50 ° C for 24 hours. Then, an ultraviolet ray irradiation device (manufactured by Nitto Seiki Co., Ltd., trade name, UM-810) is used for the region in which the semiconductor wafer is mounted, and ultraviolet rays of 300 mJ/cm ^{2 are} irradiated from the side of the laminated substrate K to obtain a dicing film (sometimes called "Cutting Tape K").

<Next sheet production>

As the subsequent sheet, the same sheet A as in Example 1 was used.

<Production of dicing tape integrated type and subsequent sheet>

The bonding sheet A was bonded to the adhesive layer of the dicing tape K using a hand roller, and a dicing tape-integrated sheet K was produced.

(Embodiment 12) <Production of dicing tape>

First, a substrate having a three-layer structure was produced. The basis of the outermost layer (thickness: 20 μm, polyolefin-based substrate), the intermediate layer (thickness: 40 μm, polyolefin-based substrate), and the innermost layer (thickness: 40 μm, polyolefin-based substrate) were laminated. Material (sometimes referred to as "layered substrate L").

Then, the adhesive solution L was prepared in the same manner as the above-mentioned adhesive solution A, except that the product name of the antistatic agent: PELESTAT (manufactured by Sanyo Chemical Co., Ltd.) was added in an amount of 25% by weight.

The adhesive solution L prepared above was applied onto a surface of a PET release liner which was subjected to polyfluorination treatment, and heat-crosslinked at 120 ° C for 2 minutes to form an adhesive layer having a thickness of 30 μm. Then, the adhesive layer was bonded to the innermost layer of the laminated substrate L, and stored at 50 ° C for 24 hours. Then, an ultraviolet ray irradiation device (manufactured by Nitto Seiki Co., Ltd., trade name, UM-810) is used for the region in which the semiconductor wafer is mounted, and ultraviolet rays of 300 mJ/cm ^{2 are} irradiated from the laminated substrate L side to obtain a dicing film (sometimes referred to as "Cutting Tape L").

<Next sheet production>

As the subsequent sheet, the same sheet A as in Example 1 was used.

<Production of dicing tape integrated type and subsequent sheet>

The bonding sheet A was bonded to the adhesive layer of the dicing tape L using a hand roller, and a dicing tape-integrated sheet L was produced.

(Example 13)

The dicing tape of the present Example 13 was produced in the same manner as in Example 1 except that the amount of the antistatic agent contained in the outermost layer of the substrate was changed to 5% by weight based on the total resin component of the outermost layer. The integrated type is followed by a sheet. This was taken as a dicing tape-integrated type sheet M.

(Example 14)

The same procedure as in Example 1 was carried out except that the amount of the antistatic agent contained in the outermost layer of the substrate was changed to 10% by weight based on the total resin component of the outermost layer. The diced tape-integrated type of the sheet of Example 14 was followed by a sheet. This was taken as a dicing tape-integrated type sheet N.

(Example 15)

The dicing tape of the fifteenth embodiment was produced in the same manner as in the first embodiment except that the amount of the antistatic agent contained in the outermost layer of the substrate was changed to 50% by weight based on the total resin component of the outermost layer. The integrated type is followed by a sheet. This was taken as a dicing tape-integrated type followed by a sheet O.

(Embodiment 16)

A diced tape-integrated sheet of the present Example 16 was produced in the same manner as in Example 4 except that the thickness of the antistatic agent layer was changed to about 20 nm. This was taken as a dicing tape-integrated type sheet P.

(Example 17)

A diced tape-integrated sheet of the present Example 17 was produced in the same manner as in Example 4 except that the thickness of the antistatic agent layer was changed to about 150 nm. This was taken as a dicing tape-integrated type and then a sheet Q.

(Embodiment 18)

The dicing tape of the ninth embodiment was produced in the same manner as in Example 6 except that the amount of the antistatic agent contained in the sheet was 5% by weight based on the total resin component of the sheet. The body shape follows the sheet. This was taken as a dicing tape-integrated type of sheet R.

(Embodiment 19)

A dicing tape of the present Example 19 was produced in the same manner as in Example 6 except that the amount of the antistatic agent contained in the sheet was 10% by weight based on the total resin component of the sheet. The body shape follows the sheet. This was taken as a dicing tape-integrated type sheet S.

(Embodiment 20)

The amount of the antistatic agent contained in the subsequent sheet is set to be relative to the entire sheet. A diced tape-integrated sheet of the present Example 20 was produced in the same manner as in Example 6 except that the resin component was 50% by weight. This was taken as a dicing tape-integrated type sheet T.

(Example 21) <Production of dicing tape>

First, a substrate having a three-layer structure was produced. The basis of the outermost layer (thickness: 20 μm, polyolefin-based substrate), the intermediate layer (thickness: 40 μm, polyolefin-based substrate), and the innermost layer (thickness: 40 μm, polyolefin-based substrate) were laminated. (sometimes referred to as "layered substrate U").

Then, the adhesive solution U was prepared in the same manner as the above-mentioned adhesive solution A except that the product name of the antistatic agent: PELESTAT (manufactured by Sanyo Chemical Co., Ltd.) was added in an amount of 5% by weight.

The adhesive solution U prepared above was applied onto a surface of a PET release liner which was subjected to polyfluorination treatment, and heat-crosslinked at 120 ° C for 2 minutes to form an adhesive layer having a thickness of 30 μm. Then, the adhesive layer was bonded to the innermost layer of the laminated substrate U, and stored at 50 ° C for 24 hours. Then, an ultraviolet ray irradiation device (manufactured by Nitto Seiki Co., Ltd., trade name, UM-810) is used for the region in which the semiconductor wafer is mounted, and ultraviolet rays of 300 mJ/cm ^{2 are} irradiated from the side of the laminated substrate U to obtain a dicing film (sometimes called "Cutting Tape U").

<Next sheet production>

As the subsequent sheet, the same sheet A as in Example 1 was used.

<Production of dicing tape integrated type and subsequent sheet>

The bonding sheet A was bonded to the adhesive layer of the dicing tape U using a hand roller, and a dicing tape-integrated sheet U was produced.

(Example 22) <Production of dicing tape>

First, a substrate having a three-layer structure was produced. The outermost layer (thickness: 20 μm, polyolefin-based substrate), intermediate layer (thickness: 40 μm, polyolefin-based substrate), and innermost layer are sequentially laminated. A substrate (thickness: 40 μm, polyolefin-based substrate) (sometimes referred to as "laminated substrate V").

Then, the adhesive solution V was prepared in the same manner as the above-mentioned adhesive solution A except that the product name of the antistatic agent: PELESTAT (manufactured by Sanyo Chemical Co., Ltd.) was added in an amount of 10% by weight.

The adhesive solution V prepared above was applied onto a surface of a PET release liner which was subjected to polyfluorination treatment, and heat-crosslinked at 120 ° C for 2 minutes to form an adhesive layer having a thickness of 30 μm. Then, the adhesive layer was bonded to the innermost layer of the laminated substrate V, and stored at 50 ° C for 24 hours. Then, an ultraviolet ray irradiation device (manufactured by Nitto Seiki Co., Ltd., trade name, UM-810) is used for the region in which the semiconductor wafer is mounted, and ultraviolet rays of 300 mJ/cm ^{2 are} irradiated from the side of the laminated substrate V to obtain a dicing film (sometimes called "Cutting Tape V").

<Next sheet production>

As the subsequent sheet, the same sheet A as in Example 1 was used.

<Production of dicing tape integrated type and subsequent sheet>

The bonding sheet A was bonded to the adhesive layer of the dicing tape V using a hand roll, and a dicing tape-integrated type sheet V was produced.

(Example 23) <Production of dicing tape>

First, a substrate having a three-layer structure was produced. The basis of the outermost layer (thickness: 20 μm, polyolefin-based substrate), the intermediate layer (thickness: 40 μm, polyolefin-based substrate), and the innermost layer (thickness: 40 μm, polyolefin-based substrate) were laminated. Material (sometimes referred to as "layered substrate W").

Then, the adhesive solution W was prepared in the same manner as the above-mentioned adhesive solution A except that the product name of the antistatic agent was changed to 50% by weight of PELESTAT (manufactured by Sanyo Chemical Co., Ltd.).

The adhesive solution W prepared above was applied onto a surface of a PET release liner which was subjected to polyfluorination treatment, and heat-crosslinked at 120 ° C for 2 minutes to form an adhesive layer having a thickness of 30 μm. Then, the adhesive layer was bonded to the innermost layer of the laminated substrate W, and stored at 50 ° C for 24 hours. Then, an ultraviolet ray irradiation device (manufactured by Nitto Seiki Co., Ltd., trade name, UM-810) is used for the region in which the semiconductor wafer is mounted, and ultraviolet rays of 300 mJ/cm ^{2 are} irradiated from the side of the laminated substrate W to obtain a dicing film (sometimes called "Cutting Tape W").

<Next sheet production>

As the subsequent sheet, the same sheet A as in Example 1 was used.

<Production of dicing tape integrated type and subsequent sheet>

The bonding sheet A was bonded to the adhesive layer of the dicing tape W using a hand roller, and a dicing tape-integrated sheet W was produced.

<Measurement of peeling static voltage>

The diced tape-integrated sheet was attached to a pre-removed acrylic plate (thickness: 1 mm, width: 70 mm, length: 100 mm). At the time of bonding, a hand roller is used so that the acrylic plate and the substrate of the dicing tape-integrated sheet are opposed to each other by a double-sided tape.

Place in a 23 ° C, 50% RH environment for one day, and then set the sample at a specific location (refer to Figure 2). The end portion of the succeeding sheet was fixed to an automatic reel, and peeling was performed so that the peeling angle was 150° and the peeling speed was 10 m/min. The potential of the surface on the side of the adhesive layer generated at this time was measured by a potential measuring machine (KSD-0103, manufactured by Kasuga Electric Co., Ltd.) fixed at a specific position. The measurement was carried out in an environment of 23 ° C and 50% RH. The results are shown in Table 1.

<Measurement of peeling force>

A strip of test piece having a length of 100 mm and a width of 20 mm was cut out from the dicing tape-integrated sheet. The test piece was lining the SUS plate, and then using a peeling tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation) at a temperature of 23 ° C, and at a peeling angle of 90 °, a stretching speed: Under the condition of 300 mm/min, the self-cutting tape (ie, the adhesive layer from the dicing tape) is peeled and peeled off (the interface between the sheet and the adhesive layer of the dicing tape is peeled off), and then the sheet is determined. The maximum load of the load when peeling off (deduction Measuring the maximum value of the load at the peak of the initial peak), the maximum load is used as the peeling force between the adhesive layer of the sheet and the dicing tape (the adhesion of the adhesive layer of the dicing tape to the bonding force of the sheet) (continued) Force: N/20mm width). The results are shown in Table 1.

<Measurement of surface resistivity value>

For Examples 1 to 5 and 13 to 17, the surface resistivity of the surface on the outermost layer side of the dicing tape was measured; for Examples 6, 7, and 18 to 20, the side of the sheet in contact with the dicing tape was measured. The surface resistivity of the surface of the surface; for Examples 8, 9, and 10, the surface resistivity of the outermost layer of the dicing tape and the surface of the wafer back surface protective film on the side in contact with the dicing tape was measured; 12, and 21 to 23, the surface resistivity of the surface of the adhesive layer of the dicing tape was measured. In addition, the surface resistivity was measured by using a high-resistance measurement sample box TR-42 of High Megohm meter TR-8601 manufactured by ADVANTEST Co., Ltd., and applying a DC voltage of 100 V for 1 minute under conditions of 23 ° C and 60% RH. . The results are shown in Table 1.

1‧‧‧Cutting Tape Integrated Semiconductor Backside Film

2‧‧‧Flip-chip type semiconductor back surface film (film for semiconductor back surface)

3‧‧‧Cutting Tape

31‧‧‧Substrate

32‧‧‧Adhesive layer

33‧‧‧Parts corresponding to the adhesive portion of the semiconductor wafer

Claims (9)

A dicing tape-integrated splicing sheet, which comprises a dicing tape having an adhesive layer laminated on a substrate, and a subsequent sheet formed on the adhesive layer, and the peeling speed is 10 m. In the peeling test of /min and the peeling angle of 150°, the peeling force of the adhesive layer and the adhesive sheet was 0.02 to 0.5 N/20 mm, and the adhesive layer was peeled off from the adhesive sheet according to the conditions of the peeling test. The absolute value of the peeling static voltage at this time is 0.5 kV or less. The dicing tape-integrated lining sheet of claim 1, wherein the contiguous sheet is a film for flip chip type semiconductor back surface formed on a back surface of a semiconductor element to which a flip chip is attached to an adherend. A dicing tape-integrated sheet according to claim 1, wherein the substrate contains an antistatic agent. The dicing tape-integrated lining sheet of claim 3, wherein the substrate has a multilayer structure, and an antistatic agent is contained in at least one outermost layer of the substrate of the multilayer structure. A dicing tape-integrated sheet according to claim 1, wherein an antistatic agent layer containing an antistatic agent is formed on at least one surface of the substrate. A dicing tape-integrated sheet according to claim 1, wherein the adhesive layer contains an antistatic agent. A dicing tape-integrated sheet according to claim 1, wherein the above-mentioned succeeding sheet contains an antistatic agent. A method of manufacturing a semiconductor device using the method of manufacturing a semiconductor device of a dicing tape-integrated sheet according to any one of claims 1 to 7, and comprising the steps of: a step of attaching a semiconductor wafer to the subsequent sheet in the dicing tape-integrated sheet; cutting the semiconductor wafer to form a semiconductor element; and self-cutting the semiconductor element together with the succeeding sheet The step of picking up the adhesive layer. A semiconductor device manufactured using the diced tape-integrated lining sheet according to any one of claims 1 to 7.