JP5479991B2 - Flip chip type film for semiconductor backside - Google Patents

Description

  The present invention relates to a flip-chip type semiconductor back film and a dicing tape-integrated semiconductor back film. The flip chip type semiconductor back film is used for protecting the back surface of a semiconductor element such as a semiconductor chip and improving the strength. The present invention also relates to a method for manufacturing a semiconductor device using a dicing tape-integrated film for semiconductor back surface, and a flip-chip mounted semiconductor device.

  In recent years, there has been a further demand for thinner and smaller semiconductor devices and their packages. Therefore, a flip chip type semiconductor device in which a semiconductor element such as a semiconductor chip is mounted on a substrate by flip chip bonding (flip chip connection) is widely used as a semiconductor device and its package. The flip chip connection is fixed in such a manner that the circuit surface of the semiconductor chip faces the electrode forming surface of the substrate. In such a semiconductor device or the like, the back surface of the semiconductor chip may be protected by a protective film to prevent damage to the semiconductor chip or the like.

JP 2008-166451 A JP 2008-006386 A Japanese Patent Laid-Open No. 2007-261035 JP 2007-250970 A JP 2007-158026 A Japanese Patent Laid-Open No. 2004-221169 JP 2004-214288 A JP 2004-142430 A JP 2004-072108 A JP 2004-063551 A

  However, in order to protect the back surface of the semiconductor chip with the protective film, it is necessary to add a new process for attaching the protective film to the back surface of the semiconductor chip obtained in the dicing process. As a result, the number of processes increases and manufacturing costs and the like increase. In addition, due to the recent thinning, the semiconductor chip may be damaged in the semiconductor chip pickup process. Therefore, in order to increase the mechanical strength of the semiconductor wafer or the semiconductor chip until the pickup process, it is required to reinforce them. In particular, the semiconductor chip may be warped due to the thinning of the semiconductor chip, and suppression or prevention thereof is required.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a flip-chip type semiconductor back surface capable of suppressing or preventing warpage of a semiconductor element flip-chip connected on an adherend. It is providing the film for semiconductors, and the film for semiconductor back surfaces integrated with a dicing tape.

  Another object of the present invention is to provide a method for manufacturing a semiconductor device capable of suppressing the occurrence of warpage and flip-chip connecting a semiconductor element on an adherend, thereby improving the yield. Is to provide.

  As a result of studying to solve the above-mentioned conventional problems, the inventors of the present application made a flip chip connection on the adherend by controlling the glass transition temperature of the thermoplastic resin component in the flip chip type semiconductor back film. The inventors have found that warpage of a semiconductor element can be reduced, and have completed the present invention.

  That is, the flip chip type semiconductor back film according to the present invention is a flip chip type semiconductor back film to be formed on the back surface of a semiconductor element flip chip connected on an adherend, and is at least a thermosetting resin. And a thermoplastic resin component having a glass transition temperature of 25 ° C. or higher and 200 ° C. or lower.

  In flip chip mounting, a mold resin that seals the entire semiconductor package is not used, and only a bump connection portion between the adherend and the semiconductor element is generally sealed with a sealing resin called an underfill. It is. For this reason, the back surface of the semiconductor element is exposed. Here, for example, when the sealing resin is thermally cured, stress is applied to the semiconductor element due to the curing shrinkage, and the semiconductor element may be warped due to the stress. In particular, in a thin semiconductor element having a thickness of 300 μm or less (further, a thickness of 200 μm or less), the occurrence of the warp becomes significant.

  The film for flip chip type semiconductor back surface of the present invention is formed on the back surface of the semiconductor element flip-chip connected on the adherend, thereby fulfilling the function of protecting the semiconductor element. The flip chip type semiconductor back film of the present invention is formed of at least a thermosetting resin component and a thermoplastic resin component, and the glass transition temperature of the thermoplastic resin component is 25 ° C. or higher. When it is thermally cured, its mechanical strength can be increased. As a result, even if stress due to the curing shrinkage of the sealing resin is applied to the semiconductor element, the film for flip chip type semiconductor back after thermosetting can resist this and effectively warp the semiconductor element. It can be suppressed or prevented. On the other hand, by setting the glass transition temperature to 200 ° C. or lower, cracks in the package (PKG: flip chip type semiconductor device) during reflow can be suppressed. The back surface of the semiconductor element means a surface (non-circuit surface) opposite to the surface (circuit surface) on which a circuit is formed.

  The blending ratio of the thermoplastic resin component is preferably in the range of 5 wt% to 40 wt% with respect to the total amount of the resin component. Good mechanical strength when thermally cured by setting the blending ratio of the thermoplastic resin having a glass transition temperature of 25 ° C. to 200 ° C. to 5% by weight or more with respect to the total amount of the resin component of the flip chip type semiconductor back film. Can be. On the other hand, by setting the blending ratio to 40% by weight or less, it is possible to prevent the thermosetting when heated from becoming insufficient.

  The thermoplastic resin component preferably includes an acrylic resin having a glass transition temperature of 25 ° C. or higher and 200 ° C. or lower.

  The thickness of the flip chip type semiconductor back film is preferably in the range of 2 μm to 200 μm. By setting the thickness to 2 μm or more, the mechanical strength of the film can be improved and good self-supporting properties can be ensured. On the other hand, by setting the thickness to 200 μm or less, it is possible to reduce the thickness of a semiconductor device made of a semiconductor element flip-chip mounted on an adherend.

  The thickness of the semiconductor element is preferably in the range of 20 μm to 300 μm.

  The dicing tape integrated semiconductor back film according to the present invention is a dicing tape integrated semiconductor back film in which the flip chip type semiconductor back film described above is laminated on a dicing tape. The tape has a structure in which an adhesive layer is laminated on a substrate, and the flip-chip type semiconductor back film is laminated on the adhesive layer.

  Since the dicing tape-integrated film for semiconductor back surface having the above-described configuration is formed integrally with the dicing tape and the film for flip chip type semiconductor back surface, the dicing process for dicing the semiconductor wafer to produce a semiconductor element and the subsequent pickup It can also be used for the process. That is, when the dicing tape is attached to the back surface of the semiconductor wafer before the dicing step, the film for semiconductor back surface can also be attached, so the step of attaching only the film for semiconductor back surface (film attachment for semiconductor back surface) No wearing process is required. As a result, the number of processes can be reduced. In addition, since the semiconductor back film protects the semiconductor wafer and the back surface of the semiconductor element formed by dicing, damage to the semiconductor element can be reduced or prevented in the dicing process and subsequent processes (pickup process, etc.). Can do. As a result, the manufacturing yield of the flip chip type semiconductor device can be improved.

  A method for manufacturing a semiconductor device according to the present invention is a method for manufacturing a semiconductor device using the dicing tape-integrated film for semiconductor back surface described above, wherein flipping in the dicing tape-integrated film for semiconductor back surface is performed. A step of adhering a semiconductor wafer on a chip-type semiconductor back film, a step of dicing the semiconductor wafer to form a semiconductor element, and adhering the semiconductor element together with the flip-chip type semiconductor back film to the dicing tape A step of peeling from the agent layer, and a step of flip-chip connecting the semiconductor element onto the adherend.

  In the above method, since the dicing tape-integrated film for semiconductor back surface is adhered to the back surface of the semiconductor wafer, the step of adhering only the film for semiconductor back surface (film pasting step for semiconductor back surface) is not required. Further, in the semiconductor wafer dicing and the pickup of the semiconductor element formed by the dicing, the semiconductor wafer and the back surface of the semiconductor element are protected by the film for semiconductor back surface, so that damage or the like can be prevented. As a result, a manufacturing yield can be improved and a flip chip type semiconductor device can be manufactured.

  In the flip-chip connection step, a sealing resin is sealed in a gap between a semiconductor element flip-chip bonded on the adherend and the adherend, and then the sealing resin is heated. It is preferable to provide the process to harden.

  When the sealing resin is thermally cured, stress is applied to the semiconductor element due to the curing shrinkage, and the semiconductor element may be warped due to the stress. In particular, in a thin semiconductor element having a thickness of 300 μm or less (further, a thickness of 200 μm or less), the occurrence of the warp becomes significant. However, in the above method, a film for flip chip type semiconductor back surface formed of at least a thermosetting resin component and a thermoplastic resin component having a glass transition temperature of 25 ° C. to 200 ° C. is used. Then, the mechanical strength can be increased. As a result, even if stress due to the curing shrinkage of the sealing resin is applied to the semiconductor element, the film for flip chip type semiconductor back after thermosetting can resist this and effectively warp the semiconductor element. It can be suppressed or prevented.

  A semiconductor device according to the present invention is manufactured by the method for manufacturing a semiconductor device described above.

  According to the flip chip type semiconductor back film of the present invention, since the film is formed on the back surface of the semiconductor element flip-chip connected on the adherend, the function of protecting the semiconductor element is achieved. In addition, the flip chip type semiconductor back film of the present invention is formed of at least a thermosetting resin component and a thermoplastic resin component having a glass transition temperature of 25 ° C. to 200 ° C. Mechanical strength can be increased. As a result, even if stress due to the curing shrinkage of the sealing resin is applied to the semiconductor element, the film for flip chip type semiconductor back after thermosetting can resist this and effectively warp the semiconductor element. It can be suppressed or prevented.

  Further, according to the dicing tape-integrated film for semiconductor back surface of the present invention, since the dicing tape and the film for flip chip type semiconductor back surface are integrally formed, a dicing process for manufacturing a semiconductor element by dicing the semiconductor wafer It can also be used for the subsequent pick-up process. As a result, a step of attaching only the film for semiconductor back surface (film attaching step for semiconductor back surface) is not required. Further, in the subsequent dicing process and pick-up process, the film for semiconductor back surface is adhered to the back surface of the semiconductor wafer or the back surface of the semiconductor element formed by dicing, so that the semiconductor wafer and the semiconductor element can be effectively protected. And damage to the semiconductor element can be suppressed or prevented. In addition, when the semiconductor element is flip-chip connected to the adherend, the semiconductor element can be prevented from warping.

  Furthermore, according to the method for manufacturing a semiconductor device of the present invention, since the dicing tape-integrated film for semiconductor back surface is adhered to the back surface of the semiconductor wafer, the step of adhering only the film for semiconductor back surface is not required. Further, in the semiconductor wafer dicing and the pickup of the semiconductor element formed by the dicing, the semiconductor wafer and the back surface of the semiconductor element are protected by the film for semiconductor back surface, so that damage or the like can be prevented. In addition, when the semiconductor element is flip-chip connected to the adherend, the semiconductor element can be prevented from warping. As a result, a manufacturing yield can be improved and a flip chip type semiconductor device can be manufactured.

It is a cross-sectional schematic diagram which shows an example of the film for dicing tape integrated semiconductor back surfaces of this invention. It is a cross-sectional schematic diagram which shows an example of the manufacturing method of the semiconductor device using the film for dicing tape integrated semiconductor back surfaces of this invention.

  One embodiment of the present invention will be described with reference to FIG. 1, but the present invention is not limited to these examples. FIG. 1 is a schematic cross-sectional view showing an example of a dicing tape-integrated film for semiconductor back surface according to the present embodiment. Note that in this specification, parts unnecessary for description are omitted in the drawings, and there are parts illustrated in an enlarged or reduced manner for ease of description.

(Dicing tape integrated film for semiconductor backside)
As shown in FIG. 1, the dicing tape-integrated film for semiconductor back surface 1 includes a dicing tape 3 in which a pressure-sensitive adhesive layer 32 is provided on a base material 31, and a flip-chip type provided on the pressure-sensitive adhesive layer 32. And a film for semiconductor back surface (hereinafter sometimes referred to as “film for semiconductor back surface”) 2. Further, as shown in FIG. 1, the dicing tape-integrated film for semiconductor back surface of the present invention has a semiconductor only on the portion 33 corresponding to the bonded portion of the semiconductor wafer on the adhesive layer 32 of the dicing tape 3. Although the structure in which the film 2 for back surfaces was formed may be sufficient, the structure in which the film for semiconductor back surfaces was formed in the whole surface of the adhesive layer 32 may be sufficient. In addition, the surface (surface of the side stuck on the back surface of a wafer) of the film 2 for semiconductor back surfaces may be protected by the separator etc. until it is stuck on the wafer back surface.

(Flip chip type film for semiconductor backside)
The film 2 for semiconductor back surface has a film-like form. The film for semiconductor back surface 2 is normally in an uncured state (including a semi-cured state) in the form of a dicing tape integrated semiconductor back surface film as a product, and the dicing tape integrated film for semiconductor back surface is attached to a semiconductor wafer. After being applied, it is heat-cured (details will be described later).

  The film 2 for semiconductor back surface according to the present embodiment is formed of at least a thermosetting resin component and a thermoplastic resin component having a glass transition temperature (Tg) of 25 ° C. to 200 ° C. Even if the flip-chip connected semiconductor element is thin (for example, even if the thickness is 300 μm or less, further 200 μm or less), the warpage can be effectively suppressed or prevented. In flip-chip connection, after a semiconductor element is flip-chip bonded on an adherend, only the connection portion between the adherend and the semiconductor element is sealed with a sealing material (such as a sealing resin called underfill). Furthermore, although the sealing material is thermally cured, stress is applied to the semiconductor element due to curing shrinkage of the sealing material at that time. However, when the film 2 for semiconductor back surface according to the present embodiment is thermally cured by heating, it has a mechanical strength to resist the stress applied to the semiconductor element due to the curing shrinkage of the sealing resin. Become. As a result, the occurrence of warpage of the semiconductor element can be suppressed or prevented. The lower limit value of Tg is preferably 26 ° C. or higher, more preferably 27 ° C. or higher, and still more preferably 28 ° C. or higher. The upper limit of the Tg is preferably 150 ° C. or lower, more preferably 120 ° C. or lower, 100 ° C. or lower, 80 ° C. or lower, or 50 ° C. or lower. The glass transition temperature of the thermoplastic resin component can be measured by a thermomechanical analysis (TMA) method.

  Here, the film for semiconductor back surface may be a single layer or a laminated film in which a plurality of layers are laminated. When the film for semiconductor back surface is a laminated film, at least one of the layers is a layer formed of at least the thermosetting resin component described above and a thermoplastic resin component having a glass transition temperature of 25 ° C to 200 ° C. That's fine.

  Specific examples of the thermoplastic resin component having a glass transition temperature of 25 ° C. to 200 ° C. include, for example, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, and ethylene-acrylic acid copolymer. , Ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, PET (polyethylene terephthalate) and PBT (polyethylene) A thermoplastic resin such as a saturated polyester resin such as butylene terephthalate), a polyamideimide resin, or a fluororesin, and having a glass transition temperature of 25 ° C to 200 ° C. These thermoplastic resins having a Tg of 25 ° C. to 200 ° C. can be used alone or in combination of two or more. Among the thermoplastic resins, an acrylic resin (acrylic resin having a Tg of 25 ° C. to 200 ° C.) that has low ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.

  As the acrylic resin (acrylic rubber) having a Tg of 25 ° C. to 200 ° C., an acrylic resin having an acrylic ester or methacrylic ester as a main monomer can be used. That is, in the present invention, acrylic resin has a broad meaning including methacrylic resin. In the acrylic resin, the acrylic acid ester or methacrylic acid ester as the main monomer can vary in Tg of the acrylic resin as the polymer from 25 ° C. to 200 ° C., depending on the type and ratio of other monomers. If it is, it will not specifically limit. Specifically, for example, an alkyl ester of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms (for example, 1 to 30 carbon atoms) is preferable. Examples of the alkyl group include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, pentyl group, isopentyl group, hexyl group, heptyl group, and 2-ethylhexyl group. Octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, dodecyl group (lauryl group), tridecyl group, tetradecyl group, stearyl group, octadecyl group and the like. As such an alkyl group, an alkyl group having 2 to 18 carbon atoms is particularly suitable. Acrylic acid esters or methacrylic acid esters can be used alone or in combination of two or more.

  The lower limit of Tg of the acrylic resin is preferably 26 ° C or higher, more preferably 27 ° C or higher, and still more preferably 28 ° C or higher. The upper limit of the Tg is preferably 150 ° C. or lower, more preferably 120 ° C. or lower, 100 ° C. or lower, 80 ° C. or lower, or 50 ° C. or lower. The glass transition temperature of the acrylic resin can be measured by a thermomechanical analysis (TMA) method.

  When an acrylic resin having a Tg of 25 ° C. to 200 ° C. is used, the blending ratio of the acrylic resin is preferably 1 to 60% by weight and more preferably 5 to 40% by weight with respect to the total amount of the thermoplastic resin component.

  Further, the other monomer for forming the acrylic resin (a monomer other than an acrylic ester or a methacrylic ester) is not particularly limited. For example, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl Carboxyl group-containing monomers such as acrylate, itaconic acid, maleic acid, fumaric acid or crotonic acid; acid anhydride monomers such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth) acrylate, (meta ) 2-hydroxypropyl acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, (meth ) Acrylic acid 12-H Hydroxyl group-containing monomers such as roxylauryl or (4-hydroxymethylcyclohexyl) -methyl acrylate; styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfone Examples thereof include sulfonic acid group-containing monomers such as acid, sulfopropyl (meth) acrylate or (meth) acryloyloxynaphthalene sulfonic acid; and phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate. As the other monomer (large polarity), acrylonitrile is particularly preferable. Other monomers can be used alone or in combination of two or more.

  In the acrylic resin having a Tg of 25 ° C. to 200 ° C., the proportion of the acrylic acid ester or methacrylic acid ester as the main monomer may be appropriately selected from the range of, for example, 50% by weight to 100% by weight with respect to the total amount of the monomer. Preferably, it is 55 to 95% by weight (more preferably 60 to 90% by weight).

  The thermoplastic resin component may contain a thermoplastic resin having a Tg of less than 25 ° C or a thermoplastic resin having a Tg of more than 200 ° C. In this case, the proportion of the thermoplastic resin having a Tg of 25 ° C. to 200 ° C. can be appropriately selected from the range of 50% by weight or more (for example, 50% by weight to 100% by weight) with respect to the total amount of the thermoplastic resin component, Preferably it is 80 weight% or more (for example, 80 weight%-100 weight%), More preferably, it is 90 weight% or more (for example, 90 weight%-100 weight%). When a thermoplastic resin having a Tg of less than 25 ° C. is used in combination, the elastic modulus of the wafer back surface protective film may be lowered. Accordingly, it is preferable that the ratio of the thermoplastic resin having a Tg of less than 25 ° C. is small, and it is particularly preferable that the Tg is not used at all. Further, when a thermoplastic resin having a Tg of over 200 ° C. is used in combination, there may be an inconvenience that a crack of the package occurs during reflow. Accordingly, it is preferable that the ratio of the thermoplastic resin having a Tg exceeding 200 ° C. is small, and it is particularly preferable that the thermoplastic resin is not used at all. From these points, it is particularly preferable that the thermoplastic resin having a Tg of 25 ° C. to 200 ° C. is used in a proportion of 100% by weight with respect to the total amount of the thermoplastic resin component.

  The blending ratio of the thermoplastic resin component having a Tg of 25 ° C. to 200 ° C. is preferably in the range of 5% by weight to 40% by weight with respect to the total amount of the resin component of the flip chip type semiconductor back film. By setting the blending ratio of the thermoplastic resin to 5% by weight or more with respect to the total amount of the resin component, the mechanical strength at the time of thermosetting can be improved. On the other hand, by setting the blending ratio to 40% by weight or less, it is possible to prevent the thermosetting when heated from becoming insufficient.

  Examples of the thermosetting resin component include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. These thermosetting resins can be used alone or in combination of two or more. As the thermosetting resin component, an epoxy resin containing a small amount of ionic impurities that corrode semiconductor elements is particularly suitable. Moreover, a phenol resin can be used suitably as a hardening | curing agent of an epoxy resin.

  The epoxy resin is not particularly limited. For example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy. Bifunctional epoxy such as resin, biphenyl type epoxy resin, naphthalene type epoxy resin, fluorene type epoxy resin, phenol novolac type epoxy resin, orthocresol novolak type epoxy resin, trishydroxyphenylmethane type epoxy resin, tetraphenylolethane type epoxy resin Epoxy resin such as resin, polyfunctional epoxy resin, hydantoin type epoxy resin, trisglycidyl isocyanurate type epoxy resin or glycidylamine type epoxy resin It can be used.

  As the epoxy resin, among the above examples, novolac type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylolethane type epoxy resin are particularly preferable. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.

  Furthermore, the phenol resin acts as a curing agent for the epoxy resin. Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. A phenol resin can be used individually or in combination of 2 or more types. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 equivalent to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 equivalent to 1.2 equivalent. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  The thermosetting acceleration catalyst for epoxy resin and phenol resin is not particularly limited, and can be appropriately selected from known thermosetting acceleration catalysts. A thermosetting acceleration | stimulation catalyst can be used individually or in combination of 2 or more types. As the thermosetting acceleration catalyst, for example, an amine curing accelerator, a phosphorus curing accelerator, an imidazole curing accelerator, a boron curing accelerator, a phosphorus-boron curing accelerator, or the like can be used.

  The amine curing accelerator is not particularly limited, and examples thereof include monoethanolamine trifluoroborate (manufactured by Stella Chemifa Corporation), dicyandiamide (manufactured by Nacalai Tesque Corporation), and the like.

  The phosphorus curing accelerator is not particularly limited, and examples thereof include triorganophosphine such as triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, diphenyltolylphosphine. , Tetraphenylphosphonium bromide (trade name; TPP-PB), methyltriphenylphosphonium (trade name; TPP-MB), methyltriphenylphosphonium chloride (trade name; TPP-MC), methoxymethyltriphenylphosphonium (trade name; TPP-MOC), benzyltriphenylphosphonium chloride (trade name; TPP-ZC), and the like (all are manufactured by Hokuko Chemical Co., Ltd.). The triphenylphosphine compound is preferably substantially insoluble in the epoxy resin. It can suppress that thermosetting progresses too much that it is insoluble with respect to an epoxy resin. Examples of the thermosetting catalyst having a triphenylphosphine structure and substantially insoluble in the epoxy resin include methyltriphenylphosphonium (trade name: TPP-MB). The “insoluble” means that the thermosetting catalyst made of a triphenylphosphine compound is insoluble in a solvent made of an epoxy resin, and more specifically, a temperature range of 10 to 40 ° C. It means that 10 wt% or more does not dissolve in

  Examples of the imidazole curing accelerator include 2-methylimidazole (trade name; 2MZ), 2-undecylimidazole (trade name; C11-Z), 2-heptadecylimidazole (trade name; C17Z), and 1,2- Dimethylimidazole (trade name; 1.2 DMZ), 2-ethyl-4-methylimidazole (trade name; 2E4MZ), 2-phenylimidazole (trade name; 2PZ), 2-phenyl-4-methylimidazole (trade name; 2P4MZ) ), 1-benzyl-2-methylimidazole (trade name; 1B2MZ), 1-benzyl-2-phenylimidazole (trade name; 1B2PZ), 1-cyanoethyl-2-methylimidazole (trade name; 2MZ-CN), 1 -Cyanoethyl-2-undecylimidazole (trade name; C11Z-CN), 1-cyano Tyl-2-phenylimidazolium trimellitate (trade name; 2PZCNS-PW), 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine (trade name; 2MZ -A), 2,4-diamino-6- [2'-undecylimidazolyl- (1 ')]-ethyl-s-triazine (trade name; C11Z-A), 2,4-diamino-6- [2 '-Ethyl-4'-methylimidazolyl- (1')]-ethyl-s-triazine (trade name; 2E4MZ-A), 2,4-diamino-6- [2'-methylimidazolyl- (1 ')] -Ethyl-s-triazine isocyanuric acid adduct (trade name; 2MA-OK), 2-phenyl-4,5-dihydroxymethylimidazole (trade name; 2PHZ-PW), 2-phenyl-4-methyl-5 Hydroxymethylimidazole (trade name; 2P4MHZ-PW), and the like (all manufactured by Shikoku Chemicals Corporation).

  The boron-based curing accelerator is not particularly limited, and examples thereof include trichloroborane.

  The phosphorus-boron curing accelerator is not particularly limited, and examples thereof include tetraphenylphosphonium tetraphenylborate (trade name; TPP-K), tetraphenylphosphonium tetra-p-triborate (trade name; TPP-MK), and benzyl. Examples include triphenylphosphonium tetraphenylborate (trade name; TPP-ZK), triphenylphosphine triphenylborane (trade name; TPP-S), and the like (all manufactured by Hokuko Chemical Co., Ltd.).

  The blending ratio of the thermosetting acceleration catalyst is preferably in the range of 0.01 to 10 parts by weight, more preferably in the range of 0.02 to 5 parts by weight, with respect to 100 parts by weight of the thermosetting resin. A range of ˜3 parts by weight is particularly preferable. By setting the blending ratio to 10 parts by weight or more with respect to 100 parts by weight of the thermosetting resin, the tensile storage modulus at 23 ° C. after thermosetting can be set to 10 GPa or more. In addition, when the sealing resin is thermally cured, the film for the semiconductor back surface can be sufficiently cured, and the flip chip type semiconductor device without peeling can be manufactured by securely bonding and fixing to the back surface of the semiconductor element. It becomes possible. On the other hand, generation | occurrence | production of hardening inhibition can be prevented by making the said mixture ratio into 0.01 weight part or less with respect to 100 weight part of thermosetting resins.

  The film for semiconductor back surface is preferably formed of a resin composition containing an epoxy resin, a phenol resin, and a thermoplastic resin having a Tg of 25 ° C. to 200 ° C., and in particular, an epoxy resin, a phenol resin, and a Tg of 25 It is suitable that it is formed of a resin composition containing an acrylic resin at a temperature of from 200C to 200C. Since these resins have few ionic impurities and high heat resistance, the reliability of the semiconductor element can be ensured. The compounding ratio in this case is not particularly limited, but for example, with respect to 100 parts by weight of a thermoplastic resin having a Tg of 25 ° C. to 200 ° C. (for example, an acrylic resin component having a Tg of 25 ° C. to 200 ° C.) The mixing amount of the phenol resin can be appropriately selected from the range of 10 parts by weight to 200 parts by weight.

  It is important that the film 2 for semiconductor back surface has adhesiveness (adhesion) to the back surface (circuit non-formed surface) of the semiconductor wafer. That is, it is important that the film for semiconductor back surface 2 itself is an adhesive layer. The film 2 for a semiconductor back surface as such an adhesive layer can be formed by, for example, a resin composition containing an epoxy resin as a thermosetting resin. In order to crosslink the semiconductor back film 2 to some extent in advance, it is preferable to add a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer as a crosslinking agent. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.

  The film for semiconductor back surface 2 preferably has a tensile storage elastic modulus at 23 ° C. after thermosetting of 10 GPa or more and 50 GPa or less. When the tensile storage modulus is 10 GPa or more, even if the semiconductor element flip-chip connected on the adherend is thin (for example, the thickness is 300 μm or less, and further 200 μm or less), the warp thereof Can be effectively suppressed or prevented. Moreover, the crack of the package at the time of reflow can be suppressed by making the said tensile storage elastic modulus into 50 GPa or less. The lower limit value of the tensile storage modulus at 23 ° C. after the thermosetting of the film 2 for semiconductor back surface is preferably 12 GPa or more (more preferably 14 GPa or more). The upper limit is preferably 40 GPa or less (more preferably 30 GPa or less).

  Here, when the film for semiconductor back surface is a laminated film, the tensile storage modulus may be in the range of 10 GPa to 50 GPa as a whole laminated film. Moreover, the tensile storage elastic modulus of the film for semiconductor back surface can be controlled by the type and content of the resin component, the type and content (filling) of the filler (filler), and the like.

  Incidentally, the tensile storage modulus E ′ at 23 ° C. after thermosetting of the film 2 for semiconductor back surface is not laminated on the dicing tape 3, but a film for semiconductor back surface is prepared and heated at 165 ° C. for 2 hours to be cured. After that, using a dynamic viscoelasticity measuring device “Solid Analyzer RS A2” manufactured by Rheometric Co., in tension mode, sample width: 10 mm, sample length: 22.5 mm, sample thickness: 0.2 mm , Frequency: 1 Hz, rate of temperature increase: 10 ° C./min, measured at a predetermined temperature (23 ° C.) under a nitrogen atmosphere, and the obtained tensile storage modulus E ′ can be obtained.

  The adhesive strength of the film for semiconductor back surface to the semiconductor wafer (23 ° C., peeling angle 180 °, peeling speed 300 mm / min) is preferably in the range of 0.5 N / 20 mm to 15 N / 20 mm, and 0.7 N / 20 mm to 10 N / 20 mm. The range of is more preferable. By setting it to 0.5 N / 20 mm or more, it is stuck to a semiconductor wafer or a semiconductor element with excellent adhesion, and the occurrence of floating or the like can be prevented. Further, it is possible to prevent the occurrence of chip jumping during dicing of the semiconductor wafer. On the other hand, by setting it to 15 N / 20 mm or less, it can be easily peeled from the dicing tape.

  The crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, for example, an isocyanate crosslinking agent, an epoxy crosslinking agent, a melamine crosslinking agent, a peroxide crosslinking agent, a urea crosslinking agent, a metal alkoxide crosslinking agent, a metal chelate crosslinking agent, a metal salt Examples thereof include a system crosslinking agent, a carbodiimide crosslinking agent, an oxazoline crosslinking agent, an aziridine crosslinking agent, and an amine crosslinking agent. As the crosslinking agent, an isocyanate-based crosslinking agent or an epoxy-based crosslinking agent is suitable. Moreover, the said crosslinking agent can be used individually or in combination of 2 or more types.

  Examples of the isocyanate-based crosslinking agent include lower aliphatic polyisocyanates such as 1,2-ethylene diisocyanate, 1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate; cyclopentylene diisocyanate, cyclohexylene diisocyanate, Cycloaliphatic polyisocyanates such as isophorone diisocyanate, hydrogenated tolylene diisocyanate, hydrogenated xylene diisocyanate; 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 4,4'- Aromatic polyisocyanates such as diphenylmethane diisocyanate and xylylene diisocyanate, and the like, and other trimethylolpropane / tolylene diisocyanate trimer adducts [Japan Polyurethane Industry Co., Ltd.] , Trade name "Coronate L"], trimethylolpropane / hexamethylene diisocyanate trimer adduct [Nippon Polyurethane Industry Co., Ltd. under the trade name "Coronate HL"], and the like are also used. Examples of the epoxy-based crosslinking agent include N, N, N ′, N′-tetraglycidyl-m-xylenediamine, diglycidylaniline, 1,3-bis (N, N-glycidylaminomethyl) cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether , Pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether, trimethylolpropane poly In addition to lysidyl ether, adipic acid diglycidyl ester, o-phthalic acid diglycidyl ester, triglycidyl-tris (2-hydroxyethyl) isocyanurate, resorcin diglycidyl ether, bisphenol-S-diglycidyl ether, epoxy in the molecule Examples thereof include an epoxy resin having two or more groups.

  In addition, the usage-amount in particular of a crosslinking agent is not restrict | limited, According to the grade to bridge | crosslink, it can select suitably. Specifically, the amount of the crosslinking agent used is, for example, usually 7 parts by weight or less (for example, 0.05 parts by weight) with respect to 100 parts by weight of the polymer component (particularly, the polymer having a functional group at the molecular chain end). ~ 7 parts by weight). When the amount of the crosslinking agent used is more than 7 parts by weight based on 100 parts by weight of the polymer component, the adhesive force is lowered, which is not preferable. From the viewpoint of improving cohesive strength, the amount of crosslinking agent used is preferably 0.05 parts by weight or more with respect to 100 parts by weight of the polymer component.

  In the present invention, instead of using a cross-linking agent or using a cross-linking agent, it is possible to carry out a cross-linking treatment by irradiation with an electron beam or ultraviolet rays.

  The film for semiconductor back surface is preferably colored. As a result, excellent appearance can be exhibited, and a semiconductor device having an added-value appearance can be obtained. Specifically, for example, as a semiconductor device, it is possible to color-code by product. When the film for the backside of the semiconductor is colored (when it is not colorless or transparent), it is not particularly limited as a color exhibited by coloring, but it is preferably a dark color such as black, blue, red, etc. Preferably it is.

In the present embodiment, the dark, basically, L ^* a ^* b ^* L defined by the color system ^* is 60 or less (0 to 60) [preferably 50 or less (0 to 50) More preferably, it means a dark color of 40 or less (0 to 40)].

Also, black and basically, L ^* a ^* b ^* L defined by the color system ^* is 35 or less (0 to 35) [preferably 30 or less (0 to 30), more preferably 25 This means a black color which is (0-25) below. In black, a ^* and b ^* defined in the L ^* a ^* b ^* color system can be appropriately selected according to the value of L ^* . As a ^* and b ^* , for example, both are preferably −10 to 10, more preferably −5 to 5, particularly in the range of −3 to 3 (among others 0 or almost 0). Is preferred.

In the present embodiment, L ^* , a ^* , and b ^* defined by the L ^* a ^* b ^* color system are color difference meters (trade name “CR-200” manufactured by Minolta Co .; color difference meter). It is calculated | required by measuring using. The L ^* a ^* b ^* color system is a color space recommended by the International Commission on Illumination (CIE) in 1976, and is a color space called the CIE 1976 (L ^* a ^* b ^* ) color system. It means that. The L ^* a ^* b ^* color system is defined in JIS Z 8729 in the Japanese Industrial Standard.

  When coloring the film for semiconductor back surface, a color material (colorant) can be used according to the target color. As such a color material, various dark color materials such as a black color material, a blue color material, and a red color material can be suitably used, and a black color material is particularly suitable. As the color material, any of a pigment, a dye and the like may be used. Color materials can be used alone or in combination of two or more. As the dye, any form of dyes such as acid dyes, reactive dyes, direct dyes, disperse dyes, and cationic dyes can be used. Also, the form of the pigment is not particularly limited, and can be appropriately selected from known pigments.

  In particular, when a dye is used as a coloring material, the dye is dissolved or uniformly dispersed in the semiconductor back film, so that the film for semiconductor back (and hence dicing tape) having a uniform or almost uniform coloring density is obtained. Integrated film for semiconductor back surface) can be easily manufactured. Therefore, when a dye is used as the coloring material, the film for semiconductor back surface in the dicing tape-integrated film for semiconductor back surface can make the coloring density uniform or almost uniform, and can improve the marking property and appearance.

  Although it does not restrict | limit especially as a black color material, For example, it can select suitably from an inorganic black pigment and a black dye. In addition, as a black color material, a color material mixture in which a cyan color material (blue-green color material), a magenta color material (red purple color material) and a yellow color material (yellow color material) are mixed. It may be. Black color materials can be used alone or in combination of two or more. Of course, the black color material can be used in combination with a color material other than black.

  Specifically, examples of the black color material include carbon black (furnace black, channel black, acetylene black, thermal black, lamp black, etc.), graphite (graphite), copper oxide, manganese dioxide, aniline black, and perylene black. , Titanium black, cyanine black, activated carbon, ferrite (nonmagnetic ferrite, magnetic ferrite, etc.), magnetite, chromium oxide, iron oxide, molybdenum disulfide, chromium complex, complex oxide black pigment, anthraquinone organic black pigment It is done.

  In the present invention, as the black color material, C.I. I. Solvent Black 3, 7, 22, 27, 29, 34, 43, 70, C.I. I. Direct Black 17, 19, 19, 22, 32, 38, 51, 71, C.I. I. Acid Black 1, 2, 24, 26, 31, 48, 52, 107, 109, 110, 119, 154C. I. Black dyes such as Disperse Black 1, 3, 10, and 24; I. Black pigments such as CI Pigment Black 1 and 7 can also be used.

  Examples of such a black color material include a product name “Oil Black BY”, a product name “OilBlack BS”, a product name “OilBlack HBB”, a product name “Oil Black 803”, a product name “Oil Black 860”, The product name “Oil Black 5970”, the product name “Oil Black 5906”, the product name “Oil Black 5905” (manufactured by Orient Chemical Co., Ltd.) and the like are commercially available.

  Examples of the color material other than the black color material include a cyan color material, a magenta color material, and a yellow color material. Examples of cyan color materials include C.I. I. Solvent Blue 25, 36, 60, 70, 93, 95; I. Cyan dyes such as Acid Blue 6 and 45; I. Pigment Blue 1, 2, 3, 15, 15: 1, 15: 2, 15: 3, 15: 3, 15: 4, 15: 5, 15: 6, 16, 16, 17 17: 1, 18, 22, 25, 56, 60, 63, 65, 66; I. Bat Blue 4; 60, C.I. I. And cyan pigments such as CI Pigment Green 7.

  In the magenta color material, examples of the magenta dye include C.I. I. Solvent Red 1, 3, 8, 23, 24, 25, 27, 30, 30, 49, 52, 58, 63, 81, 82, 83, 84, the same 100, 109, 111, 121, 122; I. Disper thread 9; I. Solvent Violet 8, 13, 13, 21, and 27; C.I. I. Disperse violet 1; C.I. I. Basic Red 1, 2, 9, 9, 12, 14, 15, 17, 17, 18, 22, 23, 24, 27, 29, 32, 34, the same 35, 36, 37, 38, 39, 40; I. Basic Violet 1, 3, 7, 10, 14, 15, 21, 21, 25, 26, 27, 28 and the like.

  In the magenta color material, examples of the magenta pigment include C.I. I. Pigment Red 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 11, 12, 13, 14, 15, 16, 17, 18, 19, 21, 21, 22, 23, 30, 31, 32, 37, 38, 39, 40, 41, 42, 48: 1, 48: 2, 48: 3, 48: 4, 49, 49: 1, 50, 51, 52, 52: 2, 53: 1, 54, 55, 56, 57: 1, 58, 60, 60: 1, 63, 63: 1, 63: 2, 64, 64: 1, 67, 68, 81, 83, etc. 87, 88, 89, 90, 92, 101, 104, 105, 106, 108, 112, 114, 122, 123, 139, 144, 146 147, 149, 150, 151, 163, 166, 168, 170, 171, 172, 175, 176, 177, 178, 179, 184, 185 187, 190, 193, 202, 206, 207, 209, 219, 222, 224, 238, 245; I. C.I. Pigment Violet 3, 9, 19, 23, 31, 32, 33, 36, 38, 43, 50; I. Bat red 1, 2, 10, 13, 15, 23, 29, 35 and the like.

  Examples of yellow color materials include C.I. I. Solvent Yellow 19, 44, 77, 79, 81, 82, 93, 98, 103, 104, 112, 162 and the like yellow dyes; C.I. I. Pigment Orange 31 and 43; C.I. I. Pigment Yellow 1, 2, 3, 4, 5, 6, 7, 10, 10, 12, 13, 14, 15, 15, 16, 17, 23, 24, 34, 35, 37, 42, 53, 55, 65, 73, 74, 75, 81, 83, 93, 94, 95, 97, 98, 100, 101, 104, 108, 109, 110, 113, 114, 116, 117, 120, 128, 129, 133, 138, 139 147, 150, 151, 153, 154, 155, 156, 167, 172, 173, 180, 185, 195; I. Examples thereof include yellow pigments such as Vat Yellow 1, 3 and 20.

  Various color materials such as a cyan color material, a magenta color material, and a yellow color material can be used alone or in combination of two or more. When two or more kinds of various color materials such as a cyan color material, a magenta color material, and a yellow color material are used, the mixing ratio (or blending ratio) of these color materials is not particularly limited, and each color material. It can be selected as appropriate according to the type and the target color.

  When coloring the film 2 for semiconductor back surfaces, the coloring form in particular is not restrict | limited. For example, the film for semiconductor back surface may be a single layer film-like material to which a colorant is added. Further, it may be a laminated film in which at least a resin layer formed of a thermosetting resin and a colorant layer are laminated. In addition, when the film 2 for semiconductor back surfaces is a laminated film of a resin layer and a colorant layer, the film 2 for semiconductor back surface of the laminated form has a laminated form of resin layer / colorant layer / resin layer. It is preferable. In this case, the two resin layers on both sides of the colorant layer may be resin layers having the same composition or may be resin layers having different compositions.

  The film for semiconductor back surface 2 can be appropriately mixed with other additives as required. Examples of other additives include fillers (fillers), flame retardants, silane coupling agents, ion trapping agents, bulking agents, antioxidants, antioxidants, and surfactants.

  The filler may be either an inorganic filler or an organic filler, but an inorganic filler is suitable. By blending a filler such as an inorganic filler, it is possible to impart conductivity to the film for semiconductor back surface, improve thermal conductivity, adjust the elastic modulus, and the like. The film for semiconductor back surface 2 may be conductive or non-conductive. Examples of the inorganic filler include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, and other ceramics, aluminum, copper, silver, gold, nickel, chromium, lead. , Various inorganic powders made of metal such as tin, zinc, palladium, solder, or alloys, and other carbon. A filler can be used individually or in combination of 2 or more types. Among them, silica, particularly fused silica is suitable as the filler. In addition, it is preferable that the average particle diameter of an inorganic filler exists in the range of 0.1 micrometer-80 micrometers. The average particle diameter of the inorganic filler can be measured by, for example, a laser diffraction type particle size distribution measuring apparatus.

  The blending amount of the filler (particularly inorganic filler) is preferably 80 parts by weight or less (0 to 80 parts by weight), particularly 0 to 70 parts by weight with respect to 100 parts by weight of the organic resin component. It is preferable that

  Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. A flame retardant can be used individually or in combination of 2 or more types. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. A silane coupling agent can be used individually or in combination of 2 or more types. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. An ion trap agent can be used individually or in combination of 2 or more types.

  The film for semiconductor back surface 2 is, for example, a thermosetting resin such as an epoxy resin, a thermoplastic resin having a Tg of 25 ° C. to 200 ° C. (particularly, an acrylic resin having a Tg of 25 ° C. to 200 ° C.), and a solvent as necessary. It can be formed by using a conventional method of preparing a resin composition by mixing it with other additives or the like and forming it into a film-like layer. Specifically, for example, the resin composition is applied onto the pressure-sensitive adhesive layer 32 of the dicing tape, or the resin composition is applied onto an appropriate separator (such as release paper) to form a resin layer (or adhesive). A film-like layer (adhesive layer) as a film for a semiconductor back surface can be formed by a method of forming a layer) and transferring (transferring) the layer onto the pressure-sensitive adhesive layer 32. The resin composition may be a solution or a dispersion.

  In addition, when the film 2 for semiconductor back surfaces is formed with the resin composition containing thermosetting resins, such as an epoxy resin, the film 2 for semiconductor back surfaces is a thermosetting resin in the stage before applying to a semiconductor wafer. Is in an uncured or partially cured state. In this case, after being applied to the semiconductor wafer (specifically, usually when the sealing material is cured in the flip chip bonding process), the thermosetting resin in the film for semiconductor back surface is completely or almost completely cured. .

  Thus, even if the film 2 for semiconductor back surface contains the thermosetting resin, since the thermosetting resin is in an uncured or partially cured state, as the gel fraction of the film 2 for semiconductor back surface, Although not particularly limited, for example, it can be appropriately selected from the range of 50 wt% or less (0 wt% to 50 wt%), preferably 30 wt% or less (0 wt% to 30 wt%), particularly 10 It is preferable that it is below wt% (0 wt% to 10 wt%). The measuring method of the gel fraction of the films 2 and 12 for a semiconductor back surface can be measured by the following measuring method.

<Method for measuring gel fraction>
About 0.1 g from the film 2 for semiconductor back surface was sampled and weighed precisely (weight of the sample). After wrapping the sample in a mesh-like sheet, it was immersed in about 50 ml of toluene at room temperature for 1 week. Thereafter, the solvent-insoluble matter (the contents of the mesh sheet) is taken out from toluene and dried at 130 ° C. for about 2 hours. The solvent-insoluble matter after drying is weighed (weight after immersion / drying), and the following formula (a) From this, the gel fraction (% by weight) is calculated.
Gel fraction (% by weight) = [(weight after immersion / drying) / (weight of sample)] × 100 (a)

  In addition, the gel fraction of the film 2 for semiconductor back surfaces can be controlled by the heating temperature, the heating time, and the like in addition to the type and content of the resin component, the type and content of the crosslinking agent.

  In the present invention, when the film for semiconductor back surface 2 is a film-like product formed of a resin composition containing a thermosetting resin such as an epoxy resin, it can effectively exhibit adhesion to a semiconductor wafer.

  In addition, since the cutting water is used in the dicing process of the semiconductor wafer, the film for the back surface of the semiconductor may absorb moisture, resulting in a moisture content higher than that in the normal state. When flip-chip bonding is performed with such a high water content, water vapor may accumulate at the bonding interface between the semiconductor back film 2 and the semiconductor wafer or its processed body (semiconductor), and floating may occur. Therefore, as a film for a semiconductor back surface, a structure in which a core material with high moisture permeability is sandwiched between adhesive layers can diffuse water vapor and avoid such a problem. From this point of view, the semiconductor back film 2 may have a multilayer structure in which an adhesive layer is formed on one side or both sides of the core material. Examples of the core material include films (for example, polyimide films, polyester films, polyethylene terephthalate films, polyethylene naphthalate films, polycarbonate films, etc.), resin substrates reinforced with glass fibers or plastic non-woven fibers, silicon substrates, glass substrates, and the like. Is mentioned.

  Although the thickness (total thickness in the case of a laminated film) of the film 2 for semiconductor back surface is not specifically limited, For example, it can select suitably from the range of about 2 micrometers-200 micrometers. Further, the thickness is preferably about 4 μm to 160 μm, more preferably about 6 μm to 100 μm, and particularly preferably about 10 μm to 80 μm.

  The tensile storage elastic modulus at 23 ° C. in the uncured state of the film 2 for semiconductor back surface is preferably 1 GPa or more (for example, 1 GPa to 50 GPa), more preferably 2 GPa or more, and particularly preferably 3 GPa or more. Is preferred. When the tensile storage elastic modulus is 1 GPa or more, the semiconductor chip is peeled from the adhesive layer 32 of the dicing tape together with the semiconductor back surface film 2, and then the semiconductor back surface film 2 is placed on the support, When transporting or the like, it is possible to effectively suppress or prevent the semiconductor back film from sticking to the support. In addition, the said support body says the top tape in a carrier tape, a bottom tape, etc., for example. When the semiconductor back film 2 is formed of a resin composition containing a thermosetting resin, as described above, the thermosetting resin is usually in an uncured or partially cured state. The tensile storage elastic modulus of the film for use at 23 ° C. is usually the tensile storage elastic modulus at 23 ° C. when the thermosetting resin is uncured or partially cured.

  Here, the film for semiconductor back surface 2 may be a single layer or a laminated film in which a plurality of layers are laminated. In the case of a laminated film, the tensile storage elastic modulus as a whole of the laminated film is in the range of 10 GPa to 50 GPa. I just need it. In addition, the tensile storage modulus (23 ° C.) in the μm cured state of the film for semiconductor back surface is the type and content of the resin component (thermoplastic resin, thermosetting resin), the type of filler such as silica filler, The content can be controlled by appropriately setting the content. When the semiconductor back film 2 is a laminated film in which a plurality of layers are laminated (when the semiconductor back film has a laminated form), the laminated form may be, for example, a wafer adhesive layer and a laser. A laminated form composed of a mark layer can be exemplified. In addition, between such a wafer adhesive layer and a laser mark layer, other layers (intermediate layer, light blocking layer, reinforcing layer, colored layer, substrate layer, electromagnetic wave blocking layer, heat conducting layer, adhesive layer, etc.) ) May be provided. The wafer adhesive layer is a layer that exhibits excellent adhesion (adhesiveness) to the wafer, and is a layer that contacts the back surface of the wafer. On the other hand, the laser mark layer is a layer that exhibits excellent laser marking properties, and is a layer that is used when laser marking is performed on the back surface of a semiconductor chip.

  The tensile storage elastic modulus is not laminated on the dicing tape 3, but an uncured semiconductor back film 2 is prepared and a dynamic viscoelasticity measuring device “Solid Analyzer RS A2” manufactured by Rheometric is used. In the tension mode, the sample width: 10 mm, the sample length: 22.5 mm, the sample thickness: 0.2 mm, the frequency: 1 Hz, the heating rate: 10 ° C./min, a predetermined temperature under a nitrogen atmosphere ( 23 ° C.) and the obtained tensile storage modulus was obtained.

  The semiconductor back film 2 is preferably protected by a separator (release liner) (not shown). The separator has a function as a protective material for protecting the film for semiconductor back surface until it is practically used. Moreover, a separator can further be used as a support base material at the time of transferring the film 2 for semiconductor back surfaces to the adhesive layer 32 on the base material of a dicing tape. The separator is peeled off when the semiconductor wafer is stuck on the film for semiconductor back surface of the dicing tape-integrated film 1 for semiconductor back surface. As the separator, it is also possible to use polyethylene, polypropylene, plastic films (polyethylene terephthalate, etc.), paper or the like whose surface is coated with a release agent such as a fluorine release agent or a long-chain alkyl acrylate release agent. The separator can be formed by a conventionally known method. Further, the thickness of the separator is not particularly limited.

  When the semiconductor back surface film 2 is not laminated on the dicing tape 3, the semiconductor back surface film 2 is wound in a roll using one separator having a release layer on both sides, and the release layer is provided on both sides. It may be protected by the separator which has, and may be protected by the separator which has a peeling layer in at least one surface.

(Dicing tape)
The dicing tape 3 is configured by forming an adhesive layer 32 on a base material 31. Thus, the dicing tape 3 should just have the structure by which the base material 31 and the adhesive layer 32 were laminated | stacked. The base material (support base material) 31 can be used as a support base for the pressure-sensitive adhesive layer 32 or the like. The substrate 31 preferably has a radiation transparency. Examples of the substrate 31 include paper-based substrates such as paper; fiber-based substrates such as cloth, nonwoven fabric, felt, and net; metal-based substrates such as metal foils and metal plates; plastic films and sheets Plastic base materials; Rubber base materials such as rubber sheets; Foams such as foam sheets, and laminates thereof [particularly, laminates of plastic base materials and other base materials, and plastic films (or sheets) An appropriate thin leaf body such as a laminated body of each other] can be used. In the present invention, a plastic substrate such as a plastic film or sheet can be suitably used as the substrate. Examples of the material in such a plastic material include, for example, olefin resins such as polyethylene (PE), polypropylene (PP), and ethylene-propylene copolymer; ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene- (Meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer such as ethylene copolymer; polyethylene terephthalate (PET), polyethylene naphthalate (PEN), Polyester such as polybutylene terephthalate (PBT); Acrylic resin; Polyvinyl chloride (PVC); Polyurethane; Polycarbonate; Polyphenylene sulfide (PPS); Amide resin such as polyamide (nylon) and wholly aromatic polyamide (aramid); Ether ether ketone (PEEK); polyimides; polyetherimides; polyvinylidene chloride; ABS (acrylonitrile - butadiene - styrene copolymer); cellulosic resins; silicone resins; and fluorine resins.

  Moreover, as a material of the base material 31, polymers, such as the crosslinked body of the said resin, are mentioned. The plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary. According to the resin sheet imparted with heat shrinkability by stretching or the like, the adhesive area between the pressure-sensitive adhesive layer 32 and the semiconductor back surface film 2 is reduced by thermally shrinking the base material 31 after dicing, The collection can be facilitated.

  The surface of the base material 31 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed.

  As the base material 31, the same kind or different kinds can be appropriately selected and used, and if necessary, a blend of several kinds can be used. The base material 31 is provided with a deposited layer of a conductive material having a thickness of about 30 to 500 mm made of a metal, an alloy, an oxide thereof, or the like on the base material 31 in order to impart an antistatic ability. be able to. The base material 31 may be a single layer or a multilayer of two or more types.

  The thickness of the substrate 31 (total thickness in the case of a laminated body) is not particularly limited and can be appropriately selected according to strength, flexibility, purpose of use, and the like. For example, it is generally 1000 μm or less (for example, 1 μm to 1000 μm), preferably 10 μm to 500 μm, more preferably 20 μm to 300 μm, particularly about 30 μm to 200 μm, but is not limited thereto.

  The base material 31 includes various additives (coloring agent, filler, plasticizer, anti-aging agent, antioxidant, surfactant, flame retardant, etc.) as long as the effects of the present invention are not impaired. It may be.

  The adhesive layer 32 is formed of an adhesive and has adhesiveness. Such an adhesive is not particularly limited, and can be appropriately selected from known adhesives. Specifically, examples of the adhesive include acrylic adhesive, rubber adhesive, vinyl alkyl ether adhesive, silicone adhesive, polyester adhesive, polyamide adhesive, urethane adhesive, fluorine Type adhesives, styrene-diene block copolymer adhesives, and known adhesives such as a creep property-improving adhesive in which a hot-melt resin having a melting point of about 200 ° C. or less is blended with these adhesives (for example, JP-A-56-61468, JP-A-61-174857, JP-A-63-17981, JP-A-56-13040, etc.) It can be selected and used. Moreover, as a pressure sensitive adhesive, a radiation curable pressure sensitive adhesive (or energy ray curable pressure sensitive adhesive) or a thermally expandable pressure sensitive adhesive can be used. An adhesive can be used individually or in combination of 2 or more types.

  As the pressure-sensitive adhesive, acrylic pressure-sensitive adhesives and rubber-based pressure-sensitive adhesives can be suitably used, and acrylic pressure-sensitive adhesives are particularly preferable. As an acrylic adhesive, an acrylic adhesive based on an acrylic polymer (homopolymer or copolymer) using one or more (meth) acrylic acid alkyl esters as monomer components. Agents.

  Examples of the (meth) acrylic acid alkyl ester in the acrylic pressure-sensitive adhesive include, for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, and (meth) acrylic. Butyl acid, isobutyl (meth) acrylate, s-butyl (meth) acrylate, t-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, ( Octyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, Undecyl (meth) acrylate, dodecyl (meth) acrylate, (meta Tridecyl acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, heptadecyl (meth) acrylate, octadecyl (meth) acrylate, nonadecyl (meth) acrylate, (meth) acrylic Examples include (meth) acrylic acid alkyl esters such as acid eicosyl. As the (meth) acrylic acid alkyl ester, a (meth) acrylic acid alkyl ester having 4 to 18 carbon atoms in the alkyl group is suitable. In addition, the alkyl group of the (meth) acrylic acid alkyl ester may be either linear or branched.

  In addition, the said acrylic polymer is another monomer component (for example) copolymerizable with the said (meth) acrylic-acid alkylester as needed for the purpose of modification | reformation, such as cohesion force, heat resistance, and crosslinkability. A unit corresponding to the copolymerizable monomer component) may be included. Examples of such copolymerizable monomer components include (meth) acrylic acid (acrylic acid, methacrylic acid), carboxyl such as carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Group-containing monomer; Acid anhydride group-containing monomer such as maleic anhydride, itaconic anhydride; hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, hydroxy (meth) acrylate Hydroxyl group-containing monomers such as hexyl, hydroxyoctyl (meth) acrylate, hydroxydecyl (meth) acrylate, hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl methacrylate; styrene sulfonic acid, Sulfonic acid group-containing monomers such as rylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid; Phosphoric acid group-containing monomers such as hydroxyethyl acryloyl phosphate; (meth) acrylamide, N, N-dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol (meth) acrylamide, N-methylolpropane (meth) (N-substituted) amide monomers such as acrylamide; (meth) acrylic acid such as aminoethyl (meth) acrylate, N, N-dimethylaminoethyl (meth) acrylate, and t-butylaminoethyl (meth) acrylate A Noalkyl monomers; (meth) acrylic acid alkoxyalkyl monomers such as methoxyethyl (meth) acrylate and ethoxyethyl (meth) acrylate; cyanoacrylate monomers such as acrylonitrile and methacrylonitrile; glycidyl (meth) acrylate and the like Epoxy group-containing acrylic monomers; styrene monomers such as styrene and α-methylstyrene; vinyl ester monomers such as vinyl acetate and vinyl propionate; olefin monomers such as isoprene, butadiene and isobutylene; vinyl ether monomers such as vinyl ether; N-vinyl pyrrolidone, methyl vinyl pyrrolidone, vinyl pyridine, vinyl piperidone, vinyl pyrimidine, vinyl piperazine, vinyl pyrazine, vinyl pyrrole, vinyl imida Nitrogen-containing monomers such as benzene, vinyl oxazole, vinyl morpholine, N-vinyl carboxylic acid amides, N-vinyl caprolactam; maleimides such as N-cyclohexylmaleimide, N-isopropylmaleimide, N-laurylmaleimide, N-phenylmaleimide Monomers: Itaconimide monomers such as N-methylitaconimide, N-ethylitaconimide, N-butylitaconimide, N-octylitaconimide, N-2-ethylhexylitaconimide, N-cyclohexylitaconimide, N-laurylitaconimide N- (meth) acryloyloxymethylene succinimide, N- (meth) acryloyl-6-oxyhexamethylene succinimide, N- (meth) acryloyl-8-oxyoctamethylenesk Succinimide monomers such as N-imide; glycol-based acrylic ester monomers such as (meth) acrylic acid polyethylene glycol, (meth) acrylic acid polypropylene glycol, (meth) acrylic acid methoxyethylene glycol, (meth) acrylic acid methoxypolypropylene glycol; ) Acrylic acid ester monomer having heterocycle such as tetrahydrofurfuryl acrylate, fluorine (meth) acrylate, silicone (meth) acrylate, halogen atom, silicon atom, etc .; hexanediol di (meth) acrylate, (poly) ethylene glycol Di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) a Chryrate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy acrylate, polyester acrylate, urethane acrylate, divinylbenzene, butyldi (meth) acrylate, hexyldi (meth) And polyfunctional monomers such as acrylate. These copolymerizable monomer components can be used alone or in combination of two or more.

  When a radiation curable pressure sensitive adhesive (or energy ray curable pressure sensitive adhesive) is used as the pressure sensitive adhesive, examples of the radiation curable pressure sensitive adhesive (composition) include a radical reactive carbon-carbon double bond as a polymer side chain or a main chain. Intrinsic radiation curable adhesives that use polymers in the chain or at the end of the main chain as the base polymer, and radiation curable adhesives that contain UV-curable monomer or oligomer components in the adhesive It is done. Moreover, when using a heat-expandable adhesive as an adhesive, as a heat-expandable adhesive, the heat-expandable adhesive containing an adhesive and a foaming agent (especially heat-expandable microsphere) etc. are mentioned, for example.

  In the present invention, the pressure-sensitive adhesive layer 32 has various additives (for example, a tackifier resin, a colorant, a thickener, a bulking agent, a filler, a plasticizer, and an anti-aging agent as long as the effects of the present invention are not impaired. , Antioxidants, surfactants, cross-linking agents, etc.).

  The crosslinking agent can be used for adjusting the adhesive strength before ultraviolet irradiation, adjusting the adhesive strength after ultraviolet irradiation, and the like. External crosslinking can be performed by using a crosslinking agent. The crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, as the crosslinking agent, an isocyanate crosslinking agent, an epoxy crosslinking agent, a melamine crosslinking agent, a peroxide crosslinking agent, a urea crosslinking agent, a metal alkoxide crosslinking agent, a metal chelate crosslinking agent. , Metal salt crosslinking agents, carbodiimide crosslinking agents, oxazoline crosslinking agents, aziridine crosslinking agents, amine crosslinking agents, and the like, and isocyanate crosslinking agents and epoxy crosslinking agents are preferred. A crosslinking agent can be used individually or in combination of 2 or more types. The amount of the crosslinking agent used is not particularly limited, but is appropriately determined depending on the balance with the base polymer (particularly acrylic polymer) to be crosslinked and further depending on the intended use as an adhesive. In general, the crosslinking agent is preferably blended in an amount of about 20 parts by weight or less, and more preferably 0.1 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  Examples of the isocyanate-based crosslinking agent include lower aliphatic polyisocyanates such as 1,2-ethylene diisocyanate, 1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate; cyclopentylene diisocyanate, cyclohexylene diisocyanate, Cycloaliphatic polyisocyanates such as isophorone diisocyanate, hydrogenated tolylene diisocyanate, hydrogenated xylene diisocyanate; 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 4,4'- Aromatic polyisocyanates such as diphenylmethane diisocyanate and xylylene diisocyanate, and the like, and other trimethylolpropane / tolylene diisocyanate trimer adducts [Japan Polyurethane Industry Co., Ltd.] , Trade name "Coronate L"], trimethylolpropane / hexamethylene diisocyanate trimer adduct [Nippon Polyurethane Industry Co., Ltd. under the trade name "Coronate HL"], and the like are also used. Examples of the epoxy-based crosslinking agent include N, N, N ′, N′-tetraglycidyl-m-xylenediamine, diglycidylaniline, 1,3-bis (N, N-glycidylaminomethyl) cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether , Pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether, trimethylolpropane poly In addition to lysidyl ether, adipic acid diglycidyl ester, o-phthalic acid diglycidyl ester, triglycidyl-tris (2-hydroxyethyl) isocyanurate, resorcin diglycidyl ether, bisphenol-S-diglycidyl ether, epoxy in the molecule Examples thereof include an epoxy resin having two or more groups.

  In the present invention, instead of using a cross-linking agent or using a cross-linking agent, it is possible to carry out a cross-linking treatment by irradiation with an electron beam or ultraviolet rays.

  The pressure-sensitive adhesive layer 32 is formed by using, for example, a conventional method of forming a sheet-like layer by mixing a pressure-sensitive adhesive (pressure-sensitive adhesive) and, if necessary, a solvent or other additives. be able to. Specifically, for example, a method of applying a mixture containing a pressure-sensitive adhesive and, if necessary, a solvent and other additives onto the base material 31, and applying the mixture onto an appropriate separator (such as a release paper) The pressure-sensitive adhesive layer 32 can be formed by a method in which the pressure-sensitive adhesive layer 32 is formed and transferred (transferred) onto the substrate 31.

  The thickness of the adhesive layer 32 is not particularly limited, and is, for example, about 5 μm to 300 μm (preferably 5 μm to 200 μm, more preferably 5 μm to 100 μm, particularly preferably 7 μm to 50 μm). When the thickness of the pressure-sensitive adhesive layer 32 is within the above range, an appropriate pressure-sensitive adhesive force can be exhibited. The pressure-sensitive adhesive layer 32 may be either a single layer or multiple layers.

  The adhesive force (23 ° C., peel angle 180 °, peel speed 300 mm / min) of the adhesive layer 32 of the dicing tape 3 to the flip chip type semiconductor back film 2 is in the range of 0.02 N / 20 mm to 10 N / 20 mm. A range of 0.05 N / 20 mm to 5 N / 20 mm is more preferable. By setting the adhesive force to 0.02 N / 20 mm or more, it is possible to prevent the semiconductor element from jumping when the semiconductor wafer is diced. On the other hand, by setting the adhesive force to 10 N / 20 mm or less, it is possible to prevent the semiconductor element from becoming difficult to peel or the adhesive residue from occurring when the semiconductor element is picked up.

  In the present invention, the film 2 for semiconductor back surface and the film 1 for semiconductor back surface with integrated dicing tape can have antistatic ability. As a result, it is possible to prevent the circuit from being broken due to the generation of static electricity during the bonding and peeling, and the resulting charging of the semiconductor wafer or the like. The antistatic ability is imparted by a method of adding an antistatic agent or a conductive substance to the base material 31, the adhesive layer 32 or the semiconductor backside film 2, a conductive layer comprising a charge transfer complex or a metal film to the base material 31. It can be performed by an appropriate method, such as a method of attaching a mark. As these methods, a method in which impurity ions that may change the quality of the semiconductor wafer are less likely to be generated is preferable. As a conductive substance (conductive filler) blended for the purpose of imparting conductivity and improving thermal conductivity, spherical, needle-like, and flaky shapes such as silver, aluminum, gold, copper, nickel, and conductive alloys Examples thereof include metal powders, metal oxides such as alumina, amorphous carbon black, and graphite. However, it is preferable that the film 2 for a semiconductor back surface is non-conductive from the viewpoint of preventing electrical leakage.

  Moreover, the film 2 for semiconductor back surfaces and the film 1 for semiconductor back surfaces integrated with a dicing tape may be formed in a form wound in a roll shape, or may be formed in a form in which sheets (films) are laminated. Good. For example, when it has a form wound in a roll shape, the film 2 for semiconductor back surface is wound in a roll shape in a state protected by a separator as necessary, or a state wound in a roll shape or The dicing tape-integrated film for semiconductor back surface 1 can be produced. In addition, as the film 2 for semiconductor back surfaces or the film 1 for semiconductor back surfaces integrated with a dicing tape in a state or form wound in a roll shape, a base material 31 and an adhesive formed on one surface of the base material 31 You may be comprised by the layer 32, the film for semiconductor back surfaces formed on the said adhesive layer 32, and the peeling process layer (back process layer) formed in the other surface of the said base material 31. FIG.

  The thickness of the dicing tape-integrated film for semiconductor back surface 1 (the thickness of the film for semiconductor back surface and the total thickness of the dicing tape composed of the base material 31 and the adhesive layer 32) is, for example, 8 μm to 1500 μm. The range is preferably 20 μm to 850 μm (more preferably 31 μm to 500 μm, particularly preferably 47 μm to 330 μm).

  Thus, in the dicing tape-integrated film for semiconductor back surface 1, the ratio between the thickness of the film for semiconductor back surface 2 and the thickness of the adhesive layer 32 of the dicing tape 3, the thickness of the film for semiconductor back surface 2, and the dicing tape 3 (the total thickness of the base material 31 and the pressure-sensitive adhesive layer 32) can be controlled to improve the dicing property during the dicing process, the pickup property during the pick-up process, and the like. The body-type semiconductor back film 1 can be effectively used in a semiconductor wafer dicing process to a semiconductor chip flip chip bonding process.

(Manufacturing method of dicing tape integrated semiconductor back film)
A method for manufacturing a dicing tape-integrated film for semiconductor back surface according to the present embodiment will be described using the dicing tape-integrated film for semiconductor back surface 1 as an example. First, the base material 31 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, the pressure-sensitive adhesive composition is applied on the substrate 31 and dried (heat-crosslinked as necessary) to form the pressure-sensitive adhesive layer 32. Examples of the coating method include roll coating, screen coating, and gravure coating. The pressure-sensitive adhesive layer composition may be directly applied to the base material 31 to form the pressure-sensitive adhesive layer 32 on the base material 31. Also, a release paper or the like on which the pressure-sensitive adhesive composition has been subjected to release treatment The adhesive layer 32 may be formed on the substrate 31 by transferring the adhesive layer 32 to the substrate 31 after being applied to the substrate 31. Thus, the dicing tape 3 is produced by forming the adhesive layer 32 on the base material 31.

  On the other hand, the forming material for forming the film 2 for the semiconductor back surface is applied on the release paper so that the thickness after drying becomes a predetermined thickness, and further dried under predetermined conditions (in the case where thermosetting is necessary, If necessary, heat treatment is performed and drying is performed to form a coating layer. By transferring this coating layer onto the pressure-sensitive adhesive layer 32, the semiconductor back surface film 2 is formed on the pressure-sensitive adhesive layer 32. In addition, after apply | coating the forming material for forming the film 2 for semiconductor back surfaces directly on the said adhesive layer 32, it dries on predetermined conditions (In the case where thermosetting is required, it heat-processes as needed. The film for semiconductor back surface 2 can also be formed on the pressure-sensitive adhesive layer 32 by applying and drying. As described above, the dicing tape-integrated film for semiconductor back surface 1 according to the present invention can be obtained.

  In addition, when the film 2 for semiconductor back surfaces is not integrated with the dicing tape 3, and it is a single body, it can be manufactured similarly to the manufacturing method of the film 2 for semiconductor back surfaces. Specifically, the forming material for forming the film for semiconductor back surface 2 is applied onto the release paper so that the thickness after drying becomes a predetermined thickness, and further dried under predetermined conditions (when thermosetting is required) In such a case, the film 2 for semiconductor back surface can be produced by forming a coating layer by performing heat treatment and drying as necessary.

  The film 2 for a semiconductor back surface and the film 1 for a semiconductor back surface integrated with a dicing tape of the present invention can be suitably used for manufacturing a semiconductor device having a flip chip bonding process. That is, the film 2 for semiconductor back surface and the film 1 for semiconductor back surface integrated with a dicing tape of the present invention are used when manufacturing a flip chip mounted semiconductor device, and the film 2 for semiconductor back surface and the dicing tape are formed on the back surface of the semiconductor chip. The flip-chip mounted semiconductor device is manufactured in a state or form in which the semiconductor back film 2 of the integrated semiconductor back film 1 is adhered. Therefore, the film 2 for semiconductor back surface and the film 1 for semiconductor back surface integrated with a dicing tape of the present invention can be used in a flip chip mounting semiconductor device (in a state where the semiconductor chip is fixed to an adherend such as a substrate by a flip chip bonding method) It can be used for the semiconductor device of the embodiment.

(Semiconductor wafer)
The semiconductor wafer is not particularly limited as long as it is a known or commonly used semiconductor wafer, and can be appropriately selected from semiconductor wafers of various materials. In the present invention, a silicon wafer can be suitably used as the semiconductor wafer.

(Method for manufacturing semiconductor device)
A method for manufacturing a semiconductor device according to the present embodiment will be described below with reference to FIG. FIG. 2 is a schematic cross-sectional view showing a method for manufacturing a semiconductor device when the dicing tape-integrated film for semiconductor back surface 1 is used. In addition, when the film 2 for semiconductor back surfaces is not integrated with the dicing tape and is a single body, the method according to the manufacturing method of the semiconductor device when the film 1 for semiconductor back surface with integrated dicing tape shown in FIG. 2 is used. Thus, a semiconductor device can be manufactured. At this time, the dicing tape 3 may be bonded in advance to one surface of the film 2 for semiconductor back surface, and then the film 2 for semiconductor back surface may be bonded to the semiconductor wafer. After wearing, the dicing tape may be bonded to the film for semiconductor back surface.

  The semiconductor device manufacturing method can manufacture a semiconductor device using the dicing tape-integrated film for semiconductor back surface 1. Specifically, a step of attaching a semiconductor wafer on the dicing tape-integrated film for semiconductor back surface, a step of dicing the semiconductor wafer, a step of picking up a semiconductor element obtained by dicing, and the semiconductor element And at least a flip-chip connection process on the adherend.

[Mounting process]
First, as shown in FIG. 2 (a), a separator arbitrarily provided on the film 2 for semiconductor back surface of the film 1 for semiconductor back surface integrated with dicing tape is appropriately peeled off, and the film 2 for semiconductor back surface is formed. The semiconductor wafer 4 is attached, and this is adhered and held and fixed (mounting process). At this time, the film 2 for semiconductor back surface is in an uncured state (including a semi-cured state). The dicing tape-integrated film for semiconductor back surface 1 is attached to the back surface of the semiconductor wafer 4. The back surface of the semiconductor wafer 4 means a surface opposite to the circuit surface (also referred to as a non-circuit surface or a non-electrode forming surface). Although the sticking method is not specifically limited, the method by pressure bonding is preferable. The crimping is usually performed while pressing with a pressing means such as a crimping roll.

[Dicing process]
Next, as shown in FIG. 2B, the semiconductor wafer 4 is diced. As a result, the semiconductor wafer 4 is cut into a predetermined size and divided into pieces (small pieces), whereby the semiconductor chip 5 is manufactured. Dicing is performed according to a conventional method from the circuit surface side of the semiconductor wafer 4, for example. Further, in this step, for example, a cutting method called full cut in which cutting is performed up to the dicing tape-integrated film for semiconductor back surface 1 can be employed. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. Further, since the semiconductor wafer 4 is bonded and fixed with excellent adhesion by the dicing tape-integrated semiconductor back surface film 1 having the semiconductor back surface film, chip chipping and chip jumping can be suppressed, and the semiconductor wafer 4 is damaged. Can also be suppressed. In addition, when the film 2 for semiconductor back surface is formed with the resin composition containing an epoxy resin, even if it cut | disconnects by dicing, it suppresses that the adhesive paste of the adhesive layer of the film for semiconductor back surface arises in the cut surface, or Can be prevented. As a result, it is possible to suppress or prevent the cut surfaces from reattaching (blocking), and the pickup described later can be performed more satisfactorily.

  In addition, when expanding the dicing tape-integrated film for semiconductor back surface 1, the expanding can be performed using a conventionally known expanding apparatus. The expander supports a donut-shaped outer ring capable of pushing down the dicing tape-integrated semiconductor back surface film 1 through the dicing ring, and a dicing tape-integrated semiconductor back surface film having a smaller diameter than the outer ring. And an inner ring. By this expanding process, it is possible to prevent adjacent semiconductor chips from coming into contact with each other and being damaged in a pickup process described later.

[Pickup process]
In order to collect the semiconductor chip 5 adhered and fixed to the dicing tape-integrated film 1 for semiconductor back surface, the semiconductor chip 5 is picked up as shown in FIG. The film 2 is peeled off from the dicing tape 3. The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up individual semiconductor chips 5 from the substrate 31 side of the dicing tape-integrated film for semiconductor back surface 1 with a needle and picking up the pushed-up semiconductor chips 5 with a pickup device or the like can be mentioned. Note that the back surface of the picked-up semiconductor chip 5 is protected by the film 2 for semiconductor back surface.

[Flip chip connection process]
As shown in FIG. 2D, the picked-up semiconductor chip 5 is fixed to an adherend such as a substrate by a flip chip bonding method (flip chip mounting method). Specifically, the semiconductor chip 5 is always placed on the adherend 6 such that the circuit surface (also referred to as a surface, a circuit pattern formation surface, an electrode formation surface, etc.) of the semiconductor chip 5 faces the adherend 6. Fix according to law. For example, the bump 51 formed on the circuit surface side of the semiconductor chip 5 is brought into contact with a bonding conductive material (solder or the like) 61 attached to the connection pad of the adherend 6 while pressing the conductive material. By melting, it is possible to secure electrical continuity between the semiconductor chip 5 and the adherend 6 and fix the semiconductor chip 5 to the adherend 6 (flip chip bonding step). At this time, a gap is formed between the semiconductor chip 5 and the adherend 6, and the air gap distance is generally about 30 μm to 300 μm. After the flip chip bonding of the semiconductor chip 5 onto the adherend 6, the facing surface and the gap between the semiconductor chip 5 and the adherend 6 are cleaned, and a sealing material (such as a sealing resin) is placed in the gap. It is important to fill and seal.

  As the adherend 6, various substrates such as a lead frame and a circuit substrate (such as a wiring circuit substrate) can be used. The material of such a substrate is not particularly limited, and examples thereof include a ceramic substrate and a plastic substrate. Examples of the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, and a polyimide substrate.

  In the flip chip bonding process, the material of the bump or the conductive material is not particularly limited, and examples thereof include a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, and a tin-zinc metal. Materials, solders (alloys) such as tin-zinc-bismuth metal materials, gold metal materials, copper metal materials, and the like.

  In the flip chip bonding process, the conductive material is melted to connect the bumps on the circuit surface side of the semiconductor chip 5 and the conductive material on the surface of the adherend 6. The temperature is usually about 260 ° C. (for example, 250 ° C. to 300 ° C.). The dicing tape-integrated film for semiconductor back surface of the present invention can have heat resistance that can withstand high temperatures in the flip chip bonding process by forming the film for semiconductor back surface with an epoxy resin or the like.

  In this step, it is preferable to clean the facing surface (electrode forming surface) and the gap between the semiconductor chip 5 and the adherend 6. The cleaning liquid used for the cleaning is not particularly limited, and examples thereof include an organic cleaning liquid and an aqueous cleaning liquid. The film for semiconductor back surface in the dicing tape-integrated film for semiconductor back surface of the present invention has solvent resistance to the cleaning liquid, and has substantially no solubility in these cleaning liquids. Therefore, as described above, various cleaning liquids can be used as the cleaning liquid, and no special cleaning liquid is required, and cleaning can be performed by a conventional method.

  Next, a sealing step for sealing the gap between the flip-chip bonded semiconductor chip 5 and the adherend 6 is performed. The sealing step is performed using a sealing resin. Although it does not specifically limit as sealing conditions at this time, Usually, the thermosetting of the sealing resin is performed by heating at 175 ° C. for 60 seconds to 90 seconds, but the present invention is not limited thereto, For example, it can be cured at 165 ° C. to 185 ° C. for several minutes. In the heat treatment in this step, not only the sealing resin but also the thermosetting of the semiconductor back film 2 is performed at the same time. Thereby, the mechanical strength of the film 2 for semiconductor back surface can be increased. The sealing resin applies stress to the semiconductor chip 5 due to curing shrinkage due to its thermal curing, but the semiconductor back film 2 has mechanical strength to resist it, so that the semiconductor chip 5 is prevented from warping. Or it can be prevented. Moreover, according to the said process, the film 2 for semiconductor back surfaces can be thermoset completely or substantially completely, and it can be made to adhere to the back surface of a semiconductor element with the outstanding adhesiveness. Furthermore, since the film for semiconductor back surface 2 according to the present invention can be thermally cured together with the sealing material in the sealing step even in an uncured state, the film for semiconductor back surface 2 is thermally cured. There is no need to add a new process.

  The sealing resin is not particularly limited as long as it is an insulating resin (insulating resin), and can be appropriately selected from sealing materials such as known sealing resins. Is more preferable. As sealing resin, the resin composition containing an epoxy resin etc. are mentioned, for example. Examples of the epoxy resin include the epoxy resins exemplified above. Moreover, as a sealing resin by the resin composition containing an epoxy resin, in addition to an epoxy resin, a thermosetting resin other than an epoxy resin (such as a phenol resin) or a thermoplastic resin may be included as a resin component. Good. In addition, as a phenol resin, it can utilize also as a hardening | curing agent of an epoxy resin, As such a phenol resin, the phenol resin illustrated above etc. are mentioned.

The semiconductor device (flip chip mounting semiconductor device) manufactured using the dicing tape-integrated film for semiconductor back surface 1 is excellent in various markings because the film for semiconductor back surface is adhered to the back surface of the semiconductor chip. Can be applied with visibility. In particular, even if the marking method is a laser marking method, marking can be performed with an excellent contrast ratio, and various information (character information, Zuken information, etc.) applied by laser marking can be seen well. is there. In addition, when performing laser marking, a well-known laser marking apparatus can be utilized. As the laser, various lasers such as a gas laser, a solid laser, and a liquid laser can be used. Specifically, the gas laser is not particularly limited, and a known gas laser can be used, but a carbon dioxide laser (CO ₂ laser), an excimer laser (ArF laser, KrF laser, XeCl laser, XeF laser). Etc.) are preferred. The solid laser is not particularly limited, and a known solid laser can be used, but a YAG laser (Nd: YAG laser or the like) and a YVO ₄ laser are preferable.

  Since the semiconductor device manufactured using the dicing tape-integrated film for semiconductor back surface of the present invention is a semiconductor device mounted by a flip chip mounting method, it is thinner than a semiconductor device mounted by a die bonding mounting method. It has a miniaturized shape. For this reason, it can use suitably as various electronic devices and electronic components, or those materials and members. Specifically, as an electronic device using the flip-chip mounted semiconductor device of the present invention, a so-called “mobile phone” or “PHS”, a small computer (for example, a so-called “PDA” (personal digital assistant)), a so-called "Notebook PC", so-called "Netbook (trademark)", so-called "wearable computer", etc.), "mobile phone" and small electronic devices integrated with a computer, so-called "digital camera (trademark)", so-called "digital" Mobile devices such as video cameras, small TVs, small game devices, small digital audio players, so-called “electronic notebooks”, so-called “electronic dictionaries”, so-called “electronic books” electronic device terminals, small digital-type watches, etc. Type electronic devices (portable electronic devices), but of course It may be an electronic device other than a mobile type (such as a setting type) (for example, a so-called “disc top PC”, a flat-screen TV, a recording / playback electronic device (hard disk recorder, DVD player, etc.), a projector, a micromachine, etc.) . Examples of materials and members of electronic components or electronic devices / electronic components include so-called “CPU” members, members of various storage devices (so-called “memory”, hard disks, etc.), and the like.

  EXAMPLES Hereinafter, although this invention is demonstrated in detail using an Example, this invention is not limited to a following example, unless the summary is exceeded. In each example, all parts are based on weight unless otherwise specified.

Example 1
<Preparation of flip chip type semiconductor backside film>
Acrylic acid ester-based polymer composed mainly of ethyl acrylate-methyl methacrylate (thermoplastic resin component, glass transition temperature 28 ° C., trade name “SG-708MT”, manufactured by Nagase ChemteX Corporation): epoxy for 100 parts Resin (trade name “Epicoat 1004” manufactured by JER Corporation): 900 parts, spherical silica (trade name “SO-25R” manufactured by Admatechs Co., Ltd.): 6177 parts, dye (trade name “OIL BLACK BS”, Orient Chemical Industries Co., Ltd. (Made by company): 4 parts, heat curing acceleration catalyst (trade name “2PHZ-PW”, manufactured by Shikoku Kasei Kogyo Co., Ltd.): 90 parts dissolved in methyl ethyl ketone to give a solid content concentration of 23.6% by weight A solution of was prepared.

  The resin composition solution was applied as a release liner (separator) on a release treatment film made of a polyethylene terephthalate film having a thickness of 50 μm, and then dried at 130 ° C. for 2 minutes. A flip chip type semiconductor back film A having a thickness (average thickness) of 30 μm was produced.

<Production of dicing tape integrated semiconductor back film>
Adhesion of the film A for flip-chip type semiconductor back surface with a dicing tape (trade name “V-8-T” manufactured by Nitto Denko Corporation; average thickness of substrate: 65 μm, average thickness of adhesive layer: 10 μm) The film was laminated on the agent layer using a hand roller to produce a dicing tape-integrated film for semiconductor back surface.

(Example 2)
<Preparation of flip chip type semiconductor backside film>
Acrylic acid ester-based polymer mainly composed of ethyl acrylate-methyl methacrylate (thermoplastic resin component, glass transition temperature 38 ° C., trade name “SG-P26TEA” manufactured by Nagase ChemteX Corporation): epoxy for 100 parts Resin (trade name “Epicoat 1004” manufactured by JER Corporation): 900 parts, spherical silica (trade name “SO-25R” manufactured by Admatechs Corporation): 6177 parts, dye (trade name “OIL GREEN 502” Orient Chemical Industries Co., Ltd. (Made by company): 4 parts, heat curing acceleration catalyst (trade name “2PHZ-PW”, manufactured by Shikoku Kasei Kogyo Co., Ltd.): 90 parts dissolved in methyl ethyl ketone to give a solid content concentration of 23.6% by weight A solution of was prepared.

  The resin composition solution was applied as a release liner (separator) on a release treatment film made of a polyethylene terephthalate film having a thickness of 50 μm, and then dried at 130 ° C. for 2 minutes. A flip chip type semiconductor back film B having a thickness (average thickness) of 30 μm was produced.

<Production of dicing tape integrated semiconductor back film>
Adhesion of the above-mentioned film B for flip-chip type semiconductor with a dicing tape (trade name “V-8-T” manufactured by Nitto Denko Corporation; average thickness of substrate: 65 μm, average thickness of adhesive layer: 10 μm) The film was laminated on the agent layer using a hand roller to produce a dicing tape-integrated film for semiconductor back surface.

(Comparative Example 1)
<Preparation of flip chip type semiconductor backside film>
Acrylic acid ester-based polymer mainly composed of ethyl acrylate-methyl methacrylate (thermoplastic resin component, glass transition temperature 11 ° C., trade name “SG-80H” manufactured by Nagase ChemteX Corporation): 100 parts epoxy Resin (trade name “Epicoat 1004” manufactured by JER Corporation): 900 parts, spherical silica (trade name “SO-25R” manufactured by Admatechs Co., Ltd.): 6177 parts, dye (trade name “OIL BLACK BS”, Orient Chemical Industries Co., Ltd. (Manufactured by the company): 4 parts were dissolved in methyl ethyl ketone to prepare a resin composition solution having a solid content of 23.6% by weight.

  The resin composition solution was applied as a release liner (separator) on a release treatment film made of a polyethylene terephthalate film having a thickness of 50 μm, and then dried at 130 ° C. for 2 minutes. A flip chip type semiconductor back film C having a thickness (average thickness) of 30 μm was prepared.

<Production of dicing tape integrated semiconductor back film>
Adhesion of the above-mentioned film C for flip-chip type semiconductor with a dicing tape (trade name “V-8-T” manufactured by Nitto Denko Corporation; average thickness of substrate: 65 μm, average thickness of adhesive layer: 10 μm) The film was laminated on the agent layer using a hand roller to produce a dicing tape-integrated film for semiconductor back surface.

(Warpage amount of semiconductor package)
The presence or absence of warpage of the semiconductor chip was evaluated by measuring the warpage amount of the semiconductor package.
That is, first, the separator was peeled from the dicing tape-integrated film for semiconductor back surface, and then a semiconductor wafer (diameter 8 inches, thickness 200 μm; silicon mirror wafer) was roll-bonded onto the film for semiconductor back surface at 70 ° C. and bonded. It was. Further, the semiconductor wafer was diced. Dicing was fully cut so as to obtain a 10 mm square chip size. Bonding conditions and dicing conditions are as follows.

[Paste condition]
Pasting device: Trade name “MA-3000III” manufactured by Nitto Seiki Co., Ltd. Pasting speed meter: 10 mm / min
Pasting pressure: 0.15 MPa
Stage temperature at the time of pasting: 70 ° C
[Dicing condition]
Dicing machine: Trade name “DFD-6361” manufactured by Disco Corporation Dicing ring: “2-8-1” (manufactured by Disco Corporation)
Dicing speed: 30mm / sec
Dicing blade:
Z1; "203O-SE 27HCDD" manufactured by DISCO
Z2: “203O-SE 27HCBB” manufactured by Disco Corporation
Dicing blade rotation speed:
Z1; 40,000 r / min
Z2; 45,000r / min Cut method: Step cut Wafer chip size: 10.0mm square

  Next, the dicing tape-integrated film for semiconductor back surface was pushed up with a needle from the dicing tape side, and the semiconductor chip obtained by dicing was picked up from the adhesive layer together with the flip chip type semiconductor back surface film. The pickup conditions are as follows.

[Pickup conditions]
Pickup device: Brand name “SPA-300” manufactured by Shinkawa Co., Ltd. Number of pickup needles: 9 Needle push-up speed: 20 mm / s
Needle push-up amount: 500 μm
Pickup time: 1 second Dicing tape Expand amount: 3mm

  Subsequently, the semiconductor chip was flip-chip bonded onto a BT substrate [a substrate using BT resin (bismaleimide triazine resin) manufactured by Mitsubishi Gas Chemical Company, Inc.]. At this time, the circuit surface of the semiconductor chip is opposed to the BT substrate, and the bump formed on the circuit surface of the semiconductor chip is brought into contact with the bonding conductive material (solder) attached to the connection pad of the BT substrate and pressed. While the temperature was raised to 260 ° C., the conductive material was melted and then cooled to room temperature. Further, an underfill material as a sealing resin was injected into the gap between the semiconductor chip and the BT substrate. At this time, the thickness of the underfill (sealing material) was 20 μm. Subsequently, after heating at 165 ° C. for 2 hours, the amount of warpage of the semiconductor package was measured.

  First, the semiconductor package was placed on a flat plate so that the BT substrate was on the lower side, and the height of the BT substrate floating from the flat plate, that is, the amount of warpage (μm) was measured. The measurement was performed using a contact-type surface roughness meter (Veeco, DEKTAK8) under the conditions of a measurement speed of 1.5 mm / s and a load of 1 g. As a result of the measurement, a case where the warpage amount was 100 μm or less was rated as “◯”, and a case where the warpage amount exceeded 100 μm was rated as “X”. The results are shown in Table 1 below.

(result)
As can be seen from Table 1, as in Examples 1 and 2, when the film for semiconductor back surface includes a thermoplastic resin component having a glass transition temperature of 25 ° C. or higher as a constituent component, the warpage amount of the semiconductor package is 100 μm. It was confirmed that the following can be suppressed. On the other hand, as in Comparative Example 1, when the film for semiconductor back surface contains a thermoplastic resin having a glass transition temperature of less than 25 ° C. as a constituent component, the warpage amount of the semiconductor package can be reduced to 100 μm or less. There wasn't.

DESCRIPTION OF SYMBOLS 1 Dicing tape integrated type film for semiconductor back surfaces 2 Film for semiconductor back surfaces 3 Dicing tape 31 Base material 32 Adhesive layer 33 The part corresponding to the sticking part of a semiconductor wafer 4 Semiconductor wafer 5 Semiconductor chip 51 On the circuit surface side of the semiconductor chip 5 Bumps formed 6 Adhered body 61 Conductive material for bonding deposited on connection pads of the adherend 6

Claims (8)

A flip chip type semiconductor back film for forming on the back surface of a semiconductor element flip chip connected on an adherend is a dicing tape integrated semiconductor back film laminated on a dicing tape,
The flip-chip type semiconductor back film is formed of at least a thermosetting resin component and a thermoplastic resin component having a glass transition temperature of 25 ° C. or higher and 200 ° C. or lower ,
The ratio of the thermoplastic resin is 50 to 100% by weight with respect to the total amount of the thermoplastic resin,
The dicing tape has a structure in which an adhesive layer is laminated on a base material, and the flip chip type semiconductor back film is a dicing tape integrated semiconductor back film laminated on the adhesive layer. 2. The dicing tape-integrated film for semiconductor back surface according to claim 1, wherein a blending ratio of the thermoplastic resin component is in a range of 5 wt% to 40 wt% with respect to the total amount of the resin component. The dicing tape-integrated film for semiconductor back surface according to claim 1, wherein the thermoplastic resin component includes an acrylic resin having a glass transition temperature of 25 ° C. or higher and 200 ° C. or lower. 4. The dicing tape-integrated film for semiconductor back surface according to claim 1, wherein a thickness of the flip chip type semiconductor back film is in a range of 2 μm to 200 μm. The film for a semiconductor back surface integrated with a dicing tape according to any one of claims 1 to 4, wherein a thickness of the semiconductor element is in a range of 20 µm to 300 µm. A method for manufacturing a semiconductor device using the dicing tape-integrated film for semiconductor back surface according to any one of claims 1 to 5 ,
Attaching a semiconductor wafer on a flip chip type semiconductor back film in the dicing tape integrated semiconductor back film;
Forming a semiconductor element by dicing the semiconductor wafer;
The step of peeling the semiconductor element from the adhesive layer of the dicing tape together with the flip chip type semiconductor back film,
And a step of flip-chip connecting the semiconductor element onto the adherend. In the flip-chip connection step, a sealing resin is sealed in a gap between a semiconductor element flip-chip bonded on the adherend and the adherend, and then the sealing resin is heated. The manufacturing method of the semiconductor device of Claim 6 which comprises the process to harden | cure. A flip-chip type semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 6 .

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