JP7217175B2 - Semiconductor back adhesion film and dicing tape integrated semiconductor back adhesion film - Google Patents

Description

The present invention relates to a semiconductor back-surface adhesive film and a dicing tape-integrated semiconductor back-surface adhesive film that can be used in the manufacturing process of semiconductor devices.

2. Description of the Related Art In manufacturing a semiconductor device having a flip-chip mounted semiconductor chip, a film for forming a protective film on the so-called back surface of the chip, that is, a semiconductor back surface adhesion film is sometimes used.

The semiconductor back surface adhesive film is attached to the back surface of a semiconductor wafer, which is a work, in the manufacturing process of a semiconductor device having semiconductor chips to be flip-chip mounted. After that, for each semiconductor element formed on the wafer to be singulated into semiconductor chips, the surface of the semiconductor back adhesion film (the surface on the side opposite to the wafer) is laser-marked for text information and graphics. Various information such as information is printed. The semiconductor wafer, with the same film, is singulated into chips, for example, by blade dicing. The thus-obtained semiconductor chip with a protective film is flip-chip mounted on a predetermined substrate. Techniques related to such a semiconductor back adhesion film are described in Patent Document 1 below, for example.

WO2014/092200

The steps that a semiconductor wafer to which a semiconductor back surface adhesive film is attached undergo in the manufacturing process of a semiconductor device include steps in which the wafer is placed under relatively high temperature conditions. A semiconductor wafer to which a conventional semiconductor back surface adhesive film is attached may warp under high temperature conditions. The warp is more likely to occur as the wafer becomes thinner.

The present invention has been devised under the circumstances as described above, and an object of the present invention is to suppress warping of a semiconductor wafer to which a semiconductor back surface adhesive film is bonded during the manufacturing process of a semiconductor device. The object of the present invention is to provide a semiconductor back-surface adhesive film suitable for sizing and a dicing tape-integrated semiconductor back-surface adhesive film.

According to a first aspect of the present invention, a semiconductor backside cling film is provided. This semiconductor back adhesion film has a calorific value (first calorific value) within the range of 50 to 200 ° C. in differential scanning calorimetry at a heating rate of 10 ° C./min, and a heat treatment of 130 ° C. and 2 hours. After passing through, the difference between the calorific value (second calorific value) within the range of 50 to 200 ° C in differential scanning calorimetry at a heating rate of 10 ° C / min (from the first calorific value to the second calorific value reduced heat quantity) is 50 J/g or less. Such a semiconductor back surface adhesive film can be used to obtain a semiconductor chip with a chip back surface protective film in the manufacturing process of a semiconductor device.

The first calorific value in the present invention is the range of 50 to 200° C. in differential scanning calorimetry at a heating rate of 10° C./min for a semiconductor back adhesion film that has not undergone heat treatment at 130° C. for 2 hours. is the amount of heat generated inside. The second calorific value in the present invention is within the range of 50 to 200° C. in differential scanning calorimetry at a heating rate of 10° C./min for a semiconductor back adhesion film that has undergone heat treatment at 130° C. for 2 hours. is the calorific value at The configuration in which the difference between these heat generation amounts (the heat amount obtained by subtracting the second heat generation amount from the first heat generation amount) in the semiconductor back adhesion film is 50 J/g or less, the semiconductor wafer to which the film is bonded is exposed to a high temperature environment. The present inventors have found that this is suitable for suppressing warping of the wafer in some cases. For example, it is as shown in Examples and Comparative Examples below.

Each of the above calorific values in the range of 50 to 200° C. in differential scanning calorimetry of the semiconductor back adhesion film is mainly occupied by the calorific value (reaction heat quantity) due to the reaction between the constituent components in the same film. . The configuration in which the difference between the first calorific value of the semiconductor back contact film that has not undergone the heat treatment and the second calorific value of the semiconductor back contact film that has undergone the heat treatment is 50 J/g or less is According to the treatment, it means that the reaction corresponding to the heat generation amount or reaction heat amount of 50 J/g or less proceeds in the semiconductor back adhesion film. That is, in the same structure, the reaction has already progressed in the semiconductor back contact film before the heat treatment to such an extent that the reaction progressing in the semiconductor back contact film due to the heat treatment corresponds to a calorific value of 50 J/g or less. (the reaction rate in the film is high) or the heat treatment makes it difficult for the reaction to proceed in the semiconductor back adhesion film. Such a configuration of the semiconductor back adhesion film is suitable for reducing the extent to which the film shrinks due to progress of reaction due to exposure to a high temperature environment. suitable for suppressing warpage of the wafer when exposed to

As described above, the semiconductor back contact film according to the first aspect of the present invention is suitable for suppressing warping of a semiconductor wafer to which the semiconductor back contact film is bonded during the manufacturing process of a semiconductor device. From the viewpoint of suppressing such warpage, the difference in the amount of heat generated is preferably 30 J/g or less, more preferably 20 J/g or less, and more preferably 10 J/g or less.

This semiconductor back adhesion film is measured on a semiconductor back adhesion film sample piece with a width of 10 mm under the conditions of an initial chuck distance of 20 mm, a frequency of 1 Hz, and a heating rate of 10 ° C./min (elastic modulus measurement conditions). The ratio of the tensile storage modulus at 150°C measured under the elastic modulus measurement conditions after heat treatment at 130°C for 2 hours to the storage modulus is preferably 20 or less, more preferably 10. Below, more preferably 5 or less, more preferably 3 or less, more preferably 1.5 or less. Such a configuration is suitable for reducing the extent to which the film shrinks due to exposure to a high-temperature environment, so that when a semiconductor wafer to which the film is bonded is exposed to a high-temperature environment, the wafer is not warped. suitable for suppressing the occurrence of

The semiconductor back adhesion film preferably contains an inorganic filler. In this case, the inorganic filler content of the semiconductor back adhesive film is preferably 30% by mass or more, more preferably 40% by mass or more, and more preferably 50% by mass or more. These configurations are preferable for suppressing the aforementioned warping of the semiconductor back surface adhesive film or the semiconductor wafer to which it is attached. Moreover, from the viewpoint of ensuring printability by laser marking in the semiconductor back adhesive film, the inorganic filler content of the semiconductor back adhesive film is preferably less than 75% by mass.

The glass transition temperature of the semiconductor back adhesion film is preferably 100 to 200.degree. Such a configuration is suitable for reducing the stress generated due to thermal contraction in the semiconductor device manufacturing process in which the semiconductor back contact film is used, and for reducing the stress by narrowing the high-elasticity region.

The semiconductor back adhesion film preferably contains an epoxy resin having an epoxy equivalent of 150 to 900 g/eq in a proportion of 2 to 20 mass %. Such a configuration is suitable for ensuring good adhesiveness while suppressing the number of cross-linking points in the constituent resin material of the semiconductor back adhesive film. In the semiconductor back adhesion film, shrinkage due to crosslinking reaction during heating tends to be suppressed as the number of crosslinking points in the constituent resin material is reduced.

According to a second aspect of the present invention, a dicing tape-integrated semiconductor back adhesion film is provided. This dicing tape-integrated semiconductor back adhesion film comprises a dicing tape and the semiconductor back adhesion film according to the first aspect of the present invention. A dicing tape has a laminated structure including a substrate and an adhesive layer. The semiconductor back surface adhesive film is releasably adhered to the adhesive layer of the dicing tape. Such a dicing tape-integrated semiconductor back-surface adhesive film can be used to obtain a semiconductor chip accompanied by a film for forming a chip back-surface protective film in the manufacturing process of a semiconductor device.

The dicing tape-integrated semiconductor back contact film includes the semiconductor back contact film according to the first aspect of the present invention, as described above. Such a dicing tape-integrated semiconductor back-surface adhesive film is suitable for suppressing warping of a semiconductor wafer to which the semiconductor back-surface adhesive film is attached in the process of manufacturing a semiconductor device.

1 is a plan view of a dicing tape-integrated semiconductor back contact film according to an embodiment of the present invention; FIG. 1 is a schematic cross-sectional view of a dicing tape-integrated semiconductor back contact film according to an embodiment of the present invention; FIG. FIG. 3 shows some steps in a semiconductor device manufacturing method using the dicing tape-integrated semiconductor back contact film shown in FIGS. 1 and 2. FIG. 4 represents the steps following the steps shown in FIG. It represents the steps following the steps shown in FIG. 6 represents the steps following the steps shown in FIG. It represents the steps following the steps shown in FIG.

1 and 2 show a dicing tape-integrated semiconductor back contact film X according to one embodiment of the present invention. FIG. 1 is a plan view of the dicing tape-integrated semiconductor back adhesion film X, and FIG. 2 is a cross-sectional schematic diagram of the dicing tape-integrated semiconductor back adhesion film X. As shown in FIG. The dicing tape-integrated semiconductor back-surface adhesive film X can be used in the process of obtaining a semiconductor chip with a chip back-surface protective film, and has a laminated structure including film 10 and dicing tape 20 . The film 10 is a semiconductor back contact film according to one embodiment of the present invention, and is a film to be bonded to the back surface or the back surface, which is the non-circuit forming surface, of the semiconductor wafer as the work. The dicing tape 20 has a laminated structure including a substrate 21 and an adhesive layer 22 . The adhesive layer 22 has an adhesive surface 22a on the film 10 side. The film 10 is releasably adhered to the adhesive layer 22 or its adhesive surface 22a. Further, the dicing tape-integrated semiconductor back contact film X has a disc shape with a size corresponding to the semiconductor wafer as a work.

Film 10 , which is a semiconductor back adhesion film, has a laminated structure including laser mark layer 11 and adhesive layer 12 . The laser mark layer 11 is located on the dicing tape 20 side of the film 10 and adheres to the dicing tape 20 or its adhesive layer 22 . Laser marking is applied to the surface of the laser mark layer 11 on the dicing tape 20 side during the manufacturing process of the semiconductor device. In this embodiment, the laser mark layer 11 is in a state in which a thermosetting resin composition layer has already been thermoset. The adhesive layer 12 is positioned on the side of the film 10 to which the work is bonded and has a work contact surface 12a, and in this embodiment, is a non-thermosetting resin composition layer having thermoplasticity. The film 10 having a laminated structure including the laser mark layer 11 and the adhesive layer 12 is a non-thermosetting film that does not substantially have thermosetting properties.

The laser mark layer 11 in the film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as resin components, or may have a thermosetting functional group capable of reacting with a curing agent to form a bond. It may have a composition that includes a thermoplastic resin.

When the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, and silicone resin. , and thermosetting polyimide resins. The laser mark layer 11 may contain one type of thermosetting resin, or may contain two or more types of thermosetting resins. Epoxy resin tends to have a low content of ionic impurities and the like that can cause corrosion of the semiconductor chip to be protected by the back protective film formed from the film 10 as described later. It is preferred as a thermosetting resin in layer 11 . The laser mark layer 11 contains an epoxy resin having an epoxy equivalent of preferably 150 to 900 g/eq, more preferably 150 to 700 g/eq, in a proportion of preferably 2 to 20 mass %. A phenol resin is preferable as a curing agent for making the epoxy resin exhibit thermosetting properties.

Examples of epoxy resins include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy resin, and biphenyl type epoxy resin. resins, bifunctional and polyfunctional epoxy resins such as naphthalene-type epoxy resins, fluorene-type epoxy resins, phenol novolac-type epoxy resins, ortho-cresol novolak-type epoxy resins, trishydroxyphenylmethane-type epoxy resins, and tetraphenylolethane-type epoxy resins. Epoxy resins may be mentioned. Epoxy resins also include hydantoin-type epoxy resins, trisglycidyl isocyanurate-type epoxy resins, and glycidylamine-type epoxy resins. Moreover, the laser mark layer 11 may contain one type of epoxy resin, or may contain two or more types of epoxy resins.

Phenolic resins can act as curing agents for epoxy resins, and examples of such phenolic resins include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolak resins, and nonylphenol novolak resins. A novolak type phenol resin is mentioned. Examples of the phenolic resin also include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. Phenol novolak resins and phenol aralkyl resins are particularly preferable as the phenol resin in the laser mark layer 11 . In addition, the laser mark layer 11 may contain one kind of phenol resin or two or more kinds of phenol resins as a curing agent for the epoxy resin.

When the laser mark layer 11 contains an epoxy resin and a phenolic resin as a curing agent thereof, the hydroxyl groups in the phenolic resin are preferably 0.5 to 2.0 equivalents, more than 1 equivalent of epoxy groups in the epoxy resin. Both resins are blended at a ratio of preferably 0.8 to 1.2 equivalents. Such a configuration is preferable for sufficiently advancing the curing reaction of the epoxy resin and the phenol resin when curing the laser mark layer 11 .

The total content of the thermosetting resin in the laser mark layer 11 is preferably 15 to 60% by mass, more preferably 20 to 55% by mass, from the viewpoint of properly curing the laser mark layer 11.

The thermoplastic resin in the laser mark layer 11 functions, for example, as a binder. When the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin, examples of the thermoplastic resin include acrylic Resin, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, 6 - Polyamide resins such as nylon and 6,6-nylon, phenoxy resins, saturated polyester resins such as polyethylene terephthalate and polybutylene terephthalate, polyamideimide resins, and fluororesins. The laser mark layer 11 may contain one kind of thermoplastic resin, or may contain two or more kinds of thermoplastic resins. Acrylic resin is preferable as the thermoplastic resin in the laser mark layer 11 because it contains few ionic impurities and has high heat resistance.

When the laser mark layer 11 contains an acrylic resin as the thermoplastic resin, the acrylic resin preferably contains the largest proportion of monomer units derived from (meth)acrylic acid ester. "(Meth)acrylic" shall mean "acrylic" and/or "methacrylic".

Examples of the (meth)acrylic acid ester for forming the monomer unit of the acrylic resin, that is, the (meth)acrylic acid ester that is a constituent monomer of the acrylic resin include alkyl (meth)acrylate, cyclo(meth)acrylate, Alkyl esters, and (meth)acrylic acid aryl esters are included. Examples of (meth)acrylic acid alkyl esters include (meth)acrylic acid methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, iso Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester, octadecyl esters, and eicosyl esters. (Meth)acrylic acid cycloalkyl esters include, for example, cyclopentyl and cyclohexyl esters of (meth)acrylic acid. (Meth)acrylic acid aryl esters include, for example, phenyl (meth)acrylate and benzyl (meth)acrylate. As a constituent monomer of the acrylic resin, one type of (meth)acrylic acid ester may be used, or two or more types of (meth)acrylic acid ester may be used. Also, the acrylic resin can be obtained by polymerizing raw material monomers for forming the acrylic resin. Polymerization techniques include, for example, solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.

The acrylic resin may contain one or two or more other monomers copolymerizable with the (meth)acrylic acid ester as constituent monomers, for example, in order to improve its cohesive strength and heat resistance. Such monomers include, for example, carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, and acrylonitrile. Carboxy group-containing monomers include, for example, acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Anhydride monomers include, for example, maleic anhydride and itaconic anhydride. Examples of hydroxy group-containing monomers include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, ( 8-hydroxyoctyl meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, and (4-hydroxymethylcyclohexyl)methyl (meth)acrylate. Epoxy group-containing monomers include, for example, glycidyl (meth)acrylate and methylglycidyl (meth)acrylate. Examples of sulfonic acid group-containing monomers include styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamido-2-methylpropanesulfonic acid, (meth)acrylamidopropanesulfonic acid, and (meth)acryloyloxynaphthalenesulfonic acid. mentioned. Phosphate group-containing monomers include, for example, 2-hydroxyethyl acryloyl phosphate.

When the laser mark layer 11 has a composition containing a thermoplastic resin with a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin for forming the thermosetting functional group-containing acrylic resin preferably contains the largest proportion by mass of monomer units derived from (meth)acrylic acid esters. As such a (meth)acrylic acid ester, for example, the same (meth)acrylic acid ester as described above as a constituent monomer of the acrylic resin contained in the laser mark layer 11 can be used. The acrylic resin for forming the thermosetting functional group-containing acrylic resin, for example, to improve its cohesive strength and heat resistance, can be copolymerized with (meth)acrylic acid esters. may contain a monomer unit derived from a monomer of As such a monomer, for example, those mentioned above as other monomers copolymerizable with the (meth)acrylic acid ester for forming the acrylic resin in the laser mark layer 11 can be used. On the other hand, examples of thermosetting functional groups for forming thermosetting functional group-containing acrylic resins include glycidyl groups, carboxyl groups, hydroxy groups, and isocyanate groups. Among these, a glycidyl group and a carboxy group can be preferably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxy group-containing acrylic resin can be preferably used. In addition, a curing agent capable of reacting with the thermosetting functional group in the thermosetting functional group-containing acrylic resin is selected according to the type of the thermosetting functional group. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, the curing agent may be the same phenolic resin as the epoxy resin curing agent described above.

The composition for forming the laser mark layer 11 contains a thermosetting catalyst in this embodiment. The addition of a thermosetting catalyst to the composition for forming a laser mark layer is preferable in terms of sufficiently advancing the curing reaction of the resin component in curing the laser mark layer 11 and increasing the curing reaction rate. Such thermosetting catalysts include, for example, imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihalogen borane-based compounds. Examples of imidazole compounds include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl- 4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole Lithium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-undecylimidazolyl-(1 ')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6- [2′-Methylimidazolyl-(1′)]-ethyl-s-triazineisocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole mentioned. Examples of triphenylphosphine compounds include triphenylphosphine, tri(butylphenyl)phosphine, tri(p-methylphenyl)phosphine, tri(nonylphenyl)phosphine, diphenyltolylphosphine, tetraphenylphosphonium bromide, methyl triphenylphosphonium bromide, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride, and benzyltriphenylphosphonium chloride. Triphenylphosphine-based compounds include compounds having both a triphenylphosphine structure and a triphenylborane structure. Such compounds include, for example, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-tolylborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphinetriphenylborane. Amine compounds include, for example, monoethanolamine trifluoroborate and dicyandiamide. Examples of trihalogen borane compounds include trichloroborane. The composition for forming a laser mark layer may contain one kind of thermosetting catalyst, or may contain two or more kinds of thermosetting catalysts.

The laser mark layer 11 may contain filler. The addition of a filler to the laser mark layer 11 is preferable for adjusting the physical properties of the laser mark layer 11, such as elastic modulus, strength at yield point, and elongation at break. Fillers include inorganic fillers and organic fillers. Constituent materials of the inorganic filler include, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, nitride Boron, crystalline silica, and amorphous silica are included. Constituent materials of the inorganic filler include single metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon and graphite. Examples of constituent materials of the organic filler include polymethyl methacrylate (PMMA), polyimide, polyamideimide, polyetheretherketone, polyetherimide, and polyesterimide. The laser mark layer 11 may contain one type of filler, or may contain two or more types of fillers. The filler may have various shapes such as spherical, needle-like, and flake-like. When the laser mark layer 11 contains a filler, the filler preferably has an average particle size of 30 to 1000 nm, more preferably 40 to 800 nm, and more preferably 50 to 600 nm. That is, the laser mark layer 11 preferably contains nanofillers. The configuration in which the laser mark layer 11 contains a nanofiller having such a particle size as a filler is suitable for ensuring high splittability of the film 10 to be cut into small pieces. The average particle size of the filler can be determined using, for example, a photometric particle size distribution analyzer (trade name “LA-910”, manufactured by HORIBA, Ltd.). In addition, when the laser mark layer 11 contains a filler, the content of the filler is preferably 30% by mass or more, more preferably 40% by mass or more, and more preferably 50% by mass or more. The content is preferably less than 75% by weight.

The laser mark layer 11 contains a coloring agent in this embodiment. The coloring agent may be a pigment or a dye. Examples of colorants include black colorants, cyan colorants, magenta colorants, and yellow colorants. The laser mark layer 11 preferably contains a black colorant in order to achieve high visibility of information inscribed on the laser mark layer 11 by laser marking. Examples of black colorants include carbon black, graphite (graphite), vantablack, carbon nanotubes, copper oxide, manganese dioxide, azo pigments such as azomethine azo black, aniline black, perylene black, titanium black, cyanine black, and activated carbon. , ferrite, magnetite, chromium oxide, iron oxide, molybdenum disulfide, complex oxide-based black dyes, anthraquinone-based organic black dyes, and azo-based organic black dyes. Carbon blacks include, for example, furnace black, channel black, acetylene black, thermal black, and lamp black. Examples of black colorants include CI Solvent Black 3, 7, 22, 27, 29, 34, 43, and 70. Black colorants also include CI Direct Black 17, 19, 22, 32, 38, 51, and 71. Black colorants include CI Acid Black 1, 2, 24, 26, 31, 48, 52, 107, 109, 110, 119, and 154. be done. Black colorants also include CI Disperse Black 1, 3, 10, and 24. Black colorants also include CI Pigment Black 1 and CI Pigment Black 7. The laser mark layer 11 may contain one kind of coloring agent, or may contain two or more kinds of coloring agents. The content of the coloring agent in the laser mark layer 11 is preferably 0.5% by weight or more, more preferably 1% by weight or more, and more preferably 2% by weight or more. The content is preferably 10% by weight or less, more preferably 8% by weight or less, and more preferably 5% by weight or less. These configurations regarding the content of the coloring agent are preferable in terms of achieving high visibility of the information inscribed on the laser mark layer 11 by laser marking.

The laser mark layer 11 may contain one or more other components as required. Examples of such other components include flame retardants, silane coupling agents, and ion trapping agents.

The thickness of the laser mark layer 11 is, for example, 2-100 μm.

The adhesive layer 12 in the film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as resin components, or may have a composition containing no thermosetting resin.

When the adhesive layer 12 has a composition containing a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting polyimide resins. The adhesive layer 12 may contain one type of thermosetting resin, or may contain two or more types of thermosetting resins. Epoxy resin tends to have a low content of ionic impurities and the like that can cause corrosion of the semiconductor chip to be protected by the back protective film formed from the film 10 as described later. It is preferable as a thermosetting resin in 12. Examples of the epoxy resin in the adhesive layer 12 include those described above as the epoxy resin that is the thermosetting resin when the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin.

The thermoplastic resin in the adhesive layer 12 functions as a binder, for example. As the thermoplastic resin when the adhesive layer 12 has a composition containing a thermosetting resin and a thermoplastic resin, for example, when the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin Examples of the thermoplastic resin include those described above. The adhesive layer 12 may contain one type of thermoplastic resin, or may contain two or more types of thermoplastic resins. Acrylic resin is preferable as the thermoplastic resin in the adhesive layer 12 because it contains few ionic impurities and has high heat resistance.

When the adhesive layer 12 contains an acrylic resin as the thermoplastic resin, the acrylic resin preferably contains the largest proportion of monomer units derived from (meth)acrylic acid ester. Examples of the (meth)acrylic acid ester for forming the monomer unit of such an acrylic resin include, for example, the above-described (meth)acrylic acid ester as a constituent monomer of the acrylic resin when the laser mark layer 11 contains the acrylic resin as the thermoplastic resin. ) acrylic acid esters can be used. As a constituent monomer of the acrylic resin in the adhesive layer 12, one type of (meth)acrylic acid ester may be used, or two or more types of (meth)acrylic acid ester may be used. In addition, the acrylic resin may contain one or two or more other monomers copolymerizable with the (meth)acrylic acid ester as constituent monomers, for example, to improve its cohesive strength and heat resistance. . As such a monomer, for example, those mentioned above as other monomers copolymerizable with the (meth)acrylic acid ester for forming the acrylic resin in the laser mark layer 11 can be used.

The adhesive layer 12 may contain a filler. The addition of a filler to the adhesive layer 12 is preferable for adjusting physical properties of the adhesive layer 12 such as elastic modulus, strength at yield point, and elongation at break. Examples of the filler in the adhesive layer 12 include those described above as the filler in the laser mark layer 11 . The adhesive layer 12 may contain one type of filler, or may contain two or more types of fillers. The filler may have various shapes such as spherical, needle-like, and flake-like. When the adhesive layer 12 contains a filler, the filler preferably has an average particle size of 30 to 500 nm, more preferably 40 to 400 nm, and more preferably 50 to 300 nm. That is, the adhesive layer 12 preferably contains nanofillers. The configuration in which the adhesive layer 12 contains a nanofiller having such a particle size as a filler avoids or suppresses damage to the workpiece attached or mounted on the film 10 due to the filler contained in the adhesive layer 12. In addition, it is suitable for ensuring high splittability of the film 10 to be cut into small pieces. In addition, when the adhesive layer 12 contains a filler, the content of the filler is preferably 30% by mass or more, more preferably 40% by mass or more, and more preferably 50% by mass or more. The content is preferably less than 75% by weight.

The adhesive layer 12 may contain a coloring agent. Examples of the coloring agent in the adhesive layer 12 include those described above as the coloring agent in the laser mark layer 11 . The adhesive layer 12 is colored black in order to ensure a high contrast between the laser marking location on the laser mark layer 11 side of the film 10 and other locations and to achieve good visibility of the marking information. It preferably contains an agent. The adhesive layer 12 may contain one kind of coloring agent, or may contain two or more kinds of coloring agents. The content of the coloring agent in the adhesive layer 12 is preferably 0.5% by weight or more, more preferably 1% by weight or more, and more preferably 2% by weight or more. The content is preferably 10% by weight or less, more preferably 8% by weight or less, and more preferably 5% by weight or less. These configurations regarding the content of the coloring agent are preferable for achieving the above-described good visibility of the information printed by laser marking.

Adhesive layer 12 may contain one or more other components, if desired. Examples of such other components include flame retardants, silane coupling agents, and ion trapping agents.

The thickness of the adhesive layer 12 is, for example, 2 to 100 μm.

The film 10, which is a semiconductor back adhesion film having the above configuration, has a calorific value (first calorific value) within the range of 50 to 200 ° C. in differential scanning calorimetry at a temperature increase rate of 10 ° C./min. And the difference between the calorific value (second calorific value) within the range of 50 to 200 ° C. in differential scanning calorimetry at a heating rate of 10 ° C./min after undergoing heat treatment for 2 hours (first The calorific value obtained by subtracting the second calorific value from the calorific value) is 50 J/g or less, preferably 30 J/g or less, more preferably 20 J/g or less, and more preferably 10 J/g or less.

Film 10 is measured for a film 10 sample piece with a width of 10 mm under the conditions of an initial chuck distance of 20 mm, a frequency of 1 Hz, and a heating rate of 10 ° C./min (elastic modulus measurement conditions). The ratio of the tensile storage modulus at 150°C measured under the elastic modulus measurement conditions after undergoing heat treatment at 130°C for 2 hours is preferably 20 or less, more preferably 10 or less, and more preferably It is 5 or less, more preferably 3 or less, more preferably 1.5 or less.

The inorganic filler content in the entire film 10 is preferably 30% by mass or more, more preferably 40% by mass or more, and more preferably 50% by mass or more. In addition, the inorganic filler content in the entire film 10 is preferably less than 75% by mass.

When the film 10 has the laser mark layer 11 (cured thermosetting layer) described above, the glass transition temperature of the entire film 10 is preferably 100 to 200°C.

The base material 21 of the dicing tape 20 in the dicing tape-integrated semiconductor back-surface adhesion film X is an element that functions as a support in the dicing tape 20 or the dicing tape-integrated semiconductor back-surface adhesion film X, and is, for example, a plastic film. Materials constituting the base material 21 include, for example, polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenylsulfide, and aramid. , fluororesins, cellulosic resins, and silicone resins. Polyolefins include, for example, low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene, polymethylpentene, Ethylene-vinyl acetate copolymer, ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer. be done. Polyesters include, for example, polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate. The base material 21 may consist of one kind of material, or may consist of two or more kinds of materials. The base material 21 may have a single layer structure or a multilayer structure. Further, when the substrate 21 is made of a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a biaxially stretched film. The base material 21 may consist of one kind of material, or may consist of two or more kinds of materials. When the adhesive layer 22 on the base material 21 is UV curable as described later, the base material 21 preferably has UV transparency.

The surface of the base material 21 facing the adhesive layer 22 may be subjected to a physical treatment, a chemical treatment, or an undercoating treatment for enhancing adhesion to the adhesive layer 22 . Physical treatments include, for example, corona treatment, plasma treatment, sand matting treatment, ozone exposure treatment, flame exposure treatment, high voltage shock exposure treatment, and ionizing radiation treatment. Chemical treatments include, for example, chromic acid treatment.

The thickness of the base material 21 is preferably 40 μm or more, preferably 50 μm, from the viewpoint of securing strength for the base material 21 to function as a support in the dicing tape 20 or the dicing tape-integrated semiconductor back adhesion film X. 60 μm or more, more preferably 60 μm or more. In addition, from the viewpoint of realizing appropriate flexibility in the dicing tape 20 or the dicing tape-integrated semiconductor back contact film X, the thickness of the substrate 21 is preferably 200 μm or less, more preferably 180 μm or less, and more preferably 180 μm or less. is 150 μm or less.

The adhesive layer 22 of the dicing tape 20 contains an adhesive. This adhesive may be an adhesive whose adhesive strength can be intentionally reduced by an external action (adhesive strength reducing type adhesive), or the adhesive strength may be reduced depending on an external action. Alternatively, it may be an adhesive that does not reduce the adhesive strength at all (non-adhesive strength reducing type adhesive).

Examples of adhesives capable of reducing adhesive force include adhesives that can be cured by exposure to radiation (radiation-curable adhesives). In the adhesive layer 22 of the present embodiment, one type of adhesive force reducing adhesive may be used, or two or more adhesive force reducing adhesive agents may be used.

Examples of radiation-curable adhesives for the adhesive layer 22 include adhesives that are cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X rays. A curable type adhesive (ultraviolet curable adhesive) can be particularly preferably used.

The radiation-curable adhesive for the adhesive layer 22 includes, for example, a base polymer such as an acrylic polymer as an acrylic adhesive, and a radiation-polymerizable adhesive having a functional group such as a radiation-polymerizable carbon-carbon double bond. and an additive-type radiation-curable pressure-sensitive adhesive containing a monomer component or an oligomer component.

The above acrylic polymer preferably contains the largest proportion of monomer units derived from (meth)acrylic acid ester. Examples of the (meth)acrylic acid ester for forming the monomer unit of the acrylic polymer, that is, the (meth)acrylic acid ester that is the constituent monomer of the acrylic polymer include alkyl (meth)acrylic esters, (meth)acrylic acid esters, Acid cycloalkyl esters and (meth)acrylic acid aryl esters may be mentioned, and more specifically, the same (meth)acrylic acid esters as described above with respect to the acrylic resin in the laser mark layer 11 of the film 10 may be mentioned. As the constituent monomers of the acrylic polymer, one kind of (meth)acrylic acid ester may be used, or two or more kinds of (meth)acrylic acid esters may be used. In addition, in order for the adhesive layer 22 to appropriately exhibit basic properties such as adhesiveness due to the (meth)acrylic acid ester, the proportion of the (meth)acrylic acid ester in the total monomers constituting the acrylic polymer is, for example, 40%. % by mass or more.

Acrylic polymers contain monomer units derived from one or more other monomers that are copolymerizable with (meth)acrylic acid esters, for example to improve cohesive strength and heat resistance. good too. Such monomers include, for example, carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, and acrylonitrile, and more. Specifically, the other monomers copolymerizable with the (meth)acrylic acid ester for forming the acrylic resin in the laser mark layer 11 of the film 10 include those described above.

Acrylic polymers may contain monomer units derived from polyfunctional monomers copolymerizable with monomer components such as (meth)acrylic acid esters in order to form a crosslinked structure in the polymer skeleton. Examples of such polyfunctional monomers include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, polyglycidyl(meth)acrylate, polyester (meth)acrylate, and urethane ( meth)acrylates. "(Meth)acrylate" shall mean "acrylate" and/or "methacrylate". As the constituent monomers of the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. In order for the adhesive layer 22 to appropriately exhibit the basic properties of the (meth)acrylic acid ester such as adhesiveness, the proportion of the polyfunctional monomer in the total monomers constituting the acrylic polymer is, for example, 40% by mass or less. be.

The acrylic polymer can be obtained by polymerizing raw material monomers for forming it. Polymerization techniques include, for example, solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.

The adhesive layer 22 or the adhesive for forming it may contain, for example, an external cross-linking agent in order to increase the average molecular weight of the base polymer such as an acrylic polymer. Examples of external cross-linking agents for forming a cross-linked structure by reacting with a base polymer such as an acrylic polymer include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based cross-linking agents. The content of the external cross-linking agent in the adhesive layer 22 or the adhesive for forming it is, for example, 0.1 to 5 parts by mass with respect to 100 parts by mass of the base polymer.

Examples of the radiation-polymerizable monomer component for forming the radiation-curable adhesive include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, and pentaerythritol tetra(meth)acrylate. acrylates, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate. Examples of the radiation-polymerizable oligomer component for forming the radiation-curable adhesive include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based oligomers. things are appropriate. The total content of radiation-polymerizable monomer components and oligomer components in the radiation-curable adhesive is determined within a range that can appropriately reduce the adhesive strength of the adhesive layer 22 to be formed. For example, it is 5 to 500 parts by mass with respect to 100 parts by mass. Further, as the additive-type radiation-curable pressure-sensitive adhesive, for example, one disclosed in JP-A-60-196956 may be used.

As the radiation-curable adhesive for the adhesive layer 22, for example, a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond in the polymer side chain, in the polymer main chain, or at the polymer main chain terminal. Intrinsic radiation-curable pressure-sensitive adhesives containing Such an internal radiation-curable adhesive is suitable for suppressing unintended changes over time in adhesive properties caused by migration of low-molecular-weight components within the formed adhesive layer 22 .

As the base polymer contained in the internal radiation-curable pressure-sensitive adhesive, one having an acrylic polymer as a basic skeleton is preferable. As the acrylic polymer forming such a basic skeleton, the acrylic polymer described above with respect to the additive-type radiation-curable pressure-sensitive adhesive can be employed. As a technique for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, an acrylic polymer is obtained by copolymerizing raw material monomers containing a monomer having a predetermined functional group (first functional group). After obtaining, a compound having a predetermined functional group (second functional group) and a radiation-polymerizable carbon-carbon double bond capable of reacting with and bonding to the first functional group is carbon-carbon A method of subjecting an acrylic polymer to a condensation reaction or an addition reaction while maintaining the radiation polymerizability of the double bond can be mentioned.

Combinations of the first functional group and the second functional group include, for example, a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, and an isocyanate group. and hydroxy groups. Among these combinations, a combination of a hydroxy group and an isocyanate group and a combination of an isocyanate group and a hydroxy group are preferable from the viewpoint of ease of reaction tracking. In addition, since it is technically difficult to produce a polymer having a highly reactive isocyanate group, from the viewpoint of ease of production or availability of the acrylic polymer, the first functional More preferred is when the group is a hydroxy group and said second functional group is an isocyanate group. In this case, the isocyanate compound having both a radiation-polymerizable carbon-carbon double bond and an isocyanate group as the second functional group, that is, the radiation-polymerizable unsaturated functional group-containing isocyanate compound includes, for example, methacryloyl isocyanate, 2 -methacryloyloxyethyl isocyanate (MOI), and m-isopropenyl-α,α-dimethylbenzyl isocyanate.

The radiation-curable adhesive for adhesive layer 22 preferably contains a photopolymerization initiator. Examples of photopolymerization initiators include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, and camphor. quinones, halogenated ketones, acylphosphinooxides, and acylphosphonates. Examples of α-ketol compounds include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylacetophenone, 2-methyl-2-hydroxypropyl Piophenone, and 1-hydroxycyclohexylphenyl ketone. Examples of acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethan-1-one, 2,2-diethoxyacetophenone, and 2-methyl-1-[4-(methylthio)- phenyl]-2-morpholinopropane-1. Benzoin ether compounds include, for example, benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of ketal compounds include benzyl dimethyl ketal. Examples of aromatic sulfonyl chloride compounds include 2-naphthalenesulfonyl chloride. Examples of photoactive oxime compounds include 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)oxime. Benzophenone-based compounds include, for example, benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Thioxanthone compounds include, for example, thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, and 2,4-diisopropyl Thioxanthones can be mentioned. The content of the photopolymerization initiator in the radiation-curable adhesive in the adhesive layer 22 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer such as acrylic polymer.

Examples of the above non-reducing adhesive strength adhesive include pressure-sensitive adhesives. As the pressure-sensitive adhesive for the adhesive layer 22, for example, an acrylic adhesive having an acrylic polymer as a base polymer or a rubber adhesive can be used. In the adhesive layer 22 of the present embodiment, one type of non-reducing adhesive strength adhesive may be used, or two or more types of non-reducing adhesive strength adhesive may be used.

When the adhesive layer 22 contains an acrylic adhesive as the pressure-sensitive adhesive, the acrylic polymer, which is the base polymer of the acrylic adhesive, preferably contains a monomer unit derived from (meth)acrylic acid ester in a mass ratio. contains the most in Such acrylic polymers include, for example, the acrylic polymers described above with respect to radiation-curable adhesives.

The adhesive layer 22 or the adhesive for forming it may contain, in addition to the components described above, a cross-linking accelerator, a tackifier, an antioxidant, a colorant such as a pigment or a dye, and the like. The colorant may be a compound that becomes colored upon exposure to radiation. Such compounds include, for example, leuco dyes.

The thickness of the adhesive layer 22 is, for example, 2-20 μm. Such a configuration is suitable, for example, when the pressure-sensitive adhesive layer 22 contains a radiation-curable pressure-sensitive adhesive, in order to balance the adhesive strength of the pressure-sensitive adhesive layer 22 to the film 10 before and after radiation curing.

The dicing tape-integrated semiconductor back contact film X having the structure described above can be produced, for example, as follows.

In the production of the film 10 in the dicing tape-integrated semiconductor back adhesion film X, first, a film to form the laser mark layer 11 and a film to form the adhesive layer 12 are separately produced. The film that will form the laser mark layer 11 is formed by coating a resin composition for forming the laser mark layer on a predetermined separator to form a resin composition layer, and then drying and curing the composition layer by heating. It can be produced by Examples of separators include polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, and plastic films and papers surface-coated with release agents such as fluorine release agents and long-chain alkyl acrylate release agents. mentioned. Examples of methods for applying the resin composition include roll coating, screen coating, and gravure coating. In the production of the film that will form the laser mark layer 11, the heating temperature is, for example, 90 to 160° C., and the heating time is, for example, 2 to 4 minutes. On the other hand, the film that forms the adhesive layer 12 is formed by coating a resin composition for forming an adhesive layer on a predetermined separator to form a resin composition layer, and then drying the composition layer by heating. , can be made. In the production of the film that will form the adhesive layer 12, the heating temperature is, for example, 90 to 150° C., and the heating time is, for example, 1 to 2 minutes. In the manner described above, the two types of films described above can be produced in the form in which each is accompanied by a separator. Then, the exposed surfaces of these films are laminated together. Thereby, a film 10 (with separators on both sides) having a laminate structure of the laser mark layer 11 and the adhesive layer 12 is produced.

The dicing tape 20 of the dicing tape-integrated semiconductor back adhesive film X can be produced by providing an adhesive layer 22 on a prepared base material 21 . For example, the resin substrate 21 is produced by a film forming method such as a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, or a dry lamination method. can do. The film or substrate 21 after film formation is subjected to a predetermined surface treatment as necessary. In forming the pressure-sensitive adhesive layer 22, for example, after preparing a pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer, first, the composition is applied on the substrate 21 or on a predetermined separator to form a pressure-sensitive adhesive composition layer. to form Examples of methods for applying the pressure-sensitive adhesive composition include roll coating, screen coating, and gravure coating. Next, in this pressure-sensitive adhesive composition layer, it is dried by heating as necessary, and a cross-linking reaction is caused as necessary. The heating temperature is, for example, 80 to 150° C., and the heating time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 22 is formed on the separator, the pressure-sensitive adhesive layer 22 with the separator is attached to the substrate 21, and then the separator is peeled off. As a result, the dicing tape 20 having a laminated structure of the substrate 21 and the adhesive layer 22 is produced.

In the production of the dicing tape-integrated semiconductor back contact film X, the film 10 with the separator is stamped into a disk shape of a predetermined diameter, and then the separator is peeled off from the laser mark layer 11 side of the film 10, and the dicing tape 20 is formed. The laser mark layer 11 side of the film 10 is attached to the adhesive layer 22 side. The bonding temperature is, for example, 30 to 50° C., and the bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf/cm. Next, the dicing tape 20 bonded to the film 10 in this way is punched into a disk shape with a predetermined diameter so that the center of the dicing tape 20 and the center of the film 10 are aligned. When the pressure-sensitive adhesive layer 22 contains a radiation-curable pressure-sensitive adhesive as described above, the pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays before the bonding, or after the bonding, the base material The pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays from the 21 side. Alternatively, such radiation irradiation may not be performed in the manufacturing process of the dicing tape-integrated semiconductor back adhesion film X (in this case, the adhesive layer 22 may be exposed to radiation during the use process of the dicing tape-integrated semiconductor back adhesion film X). can be cured). When the adhesive layer 22 is of an ultraviolet curable type, the integrated amount of ultraviolet irradiation for curing the adhesive layer 22 is, for example, 50 to 500 mJ/cm ² .

As described above, the dicing tape-integrated semiconductor back contact film X can be produced. When the dicing tape-integrated semiconductor back contact film X is used, the separator is peeled off from the film.

Film 10 may have a single layer construction instead of a multilayer construction as described above. When the film 10 has a single-layer structure, the film 10 is made of a non-thermosetting resin composition that does not substantially undergo thermosetting. Such a film 10 may have a composition that includes a thermoset resin and a thermoplastic resin, or may have a composition that does not include a thermoset resin.

When the single-layer film 10 has a composition containing a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, Examples include silicone resins and thermosetting polyimide resins. The film 10 may contain one type of thermosetting resin, or may contain two or more types of thermosetting resins. Examples of the epoxy resin in the film 10 include those described above as the epoxy resin that is the thermosetting resin when the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin. The single-layer film 10 preferably contains an epoxy resin having an epoxy equivalent of 150 to 900 g/eq in a proportion of 2 to 20 mass %. The epoxy equivalent weight is preferably 150-700 g/eq. A phenol resin is preferable as a curing agent for making the epoxy resin exhibit thermosetting properties.

The thermoplastic resin in the single-layer film 10 functions as a binder, for example. As the thermoplastic resin when the film 10 has a composition containing a thermosetting resin and a thermoplastic resin, for example, when the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin, heat Examples of the plastic resin include those described above. The film 10 may contain one type of thermoplastic resin, or may contain two or more types of thermoplastic resins.

When the single-layer film 10 contains an acrylic resin as the thermoplastic resin, the acrylic resin preferably contains the largest proportion of monomer units derived from (meth)acrylic acid ester. Examples of the (meth)acrylic acid ester for forming the monomer unit of such an acrylic resin include, for example, the above-described (meth)acrylic acid ester as a constituent monomer of the acrylic resin when the laser mark layer 11 contains the acrylic resin as the thermoplastic resin. ) acrylic acid esters can be used. As the constituent monomers of the acrylic resin in the film 10, one kind of (meth)acrylic acid ester may be used, or two or more kinds of (meth)acrylic acid esters may be used. In addition, the acrylic resin may contain one or two or more other monomers copolymerizable with the (meth)acrylic acid ester as constituent monomers, for example, to improve its cohesive strength and heat resistance. . As such a monomer, for example, those mentioned above as other monomers copolymerizable with the (meth)acrylic acid ester for forming the acrylic resin in the laser mark layer 11 can be used.

The single-layer film 10 may contain a filler. Blending a filler into the film 10 is preferable for adjusting physical properties of the film 10 such as elastic modulus, strength at yield point, and elongation at break. Examples of the filler in the film 10 include those described above as the filler in the laser mark layer 11 . Film 10 may contain one type of filler or may contain two or more types of filler. The filler may have various shapes such as spherical, needle-like, and flake-like. When the film 10 contains a filler, the average particle size of the filler is preferably 30-1000 nm, more preferably 40-800 nm, and more preferably 50-600 nm. That is, the film 10 preferably contains nanofillers. The configuration in which the film 10 contains a nanofiller having such a particle diameter as a filler avoids or suppresses damage to a workpiece attached or mounted on the film 10 due to the filler contained in the film 10. , and is suitable for ensuring high splittability of the film 10 to be cut into small pieces. In addition, when the film 10 contains a filler, the content of the filler is preferably 30% by mass or more, more preferably 40% by mass or more, and more preferably 50% by mass or more. The content is preferably less than 75% by weight.

If the film 10 has a single layer construction, the film 10 contains a colorant. Examples of the coloring agent in the film 10 include those described above as the coloring agent in the laser mark layer 11 . In order to ensure a high contrast between the laser marking location on the laser mark layer 11 side of the film 10 and other locations and to realize good visibility of the marking information, the film 10 is a black coloring agent. preferably contains Film 10 may contain one type of colorant, or may contain two or more types of colorants. Also, the content of the coloring agent in the film 10 is preferably 0.5% by weight or more, more preferably 1% by weight or more, and more preferably 2% by weight or more. The content is preferably 10% by weight or less, more preferably 8% by weight or less, and more preferably 5% by weight or less. These configurations regarding the content of the coloring agent are preferable for achieving the above-described good visibility of the information printed by laser marking.

The single-layer film 10 may optionally contain one or more other components. Examples of such other components include flame retardants, silane coupling agents, and ion trapping agents.

When the film 10 has a single-layer structure, the thickness of the film 10 is, for example, 2-100 μm.

3 to 7 show an example of a semiconductor device manufacturing method using the dicing tape-integrated semiconductor back surface adhesive film X described above.

In this semiconductor device manufacturing method, first, as shown in FIGS. 3A and 3B, the wafer W is thinned by grinding (wafer thinning step). Grinding can be performed using a grinding device equipped with a grinding wheel. The wafer W is a semiconductor wafer and has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been fabricated on the side of the first surface Wa of the wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements have already been formed on the first surface Wa. ing. The second surface Wb is a so-called rear surface or rear surface. In this step, after the wafer processing tape T1 having the adhesive surface T1a is attached to the first surface Wa side of the wafer W, the wafer W is held by the wafer processing tape T1 to a predetermined thickness. A thinned wafer 30 is obtained by grinding from the second surface Wb down to the second surface Wb.

Next, as shown in FIG. 4( a ), the dicing tape-integrated semiconductor back contact film X is adhered to the wafer 30 and the ring frame 41 . Specifically, the film 10 of the dicing tape-integrated semiconductor back contact film X is adhered to the wafer 30 held by the wafer processing tape T1 and the ring frame 41 arranged so as to surround the wafer 30. At the same time, the dicing tape-integrated semiconductor back contact film X is laminated so that the dicing tape 20 or its adhesive layer 22 is adhered to the ring frame 41 . Then, as shown in FIG. 4B, the wafer processing tape T1 is peeled off from the wafer 30. Then, as shown in FIG. Thereafter, a baking process for enhancing the wettability and adhesion of the film 10 to the wafer 30 may be performed, for example, before the dicing process described later. In the baking step, the dicing tape-integrated semiconductor back contact film X or film 10 holding the wafer 30 is preferably heated at a temperature of 100° C. or less for several hours.

Next, laser marking is performed by irradiating the laser mark layer 11 of the film 10 in the dicing tape-integrated semiconductor back adhesive film X through the dicing tape 20 (that is, from the base material 21 side of the dicing tape 20). (laser marking process). By this laser marking, various types of information such as character information and graphic information are marked on each semiconductor element that will be separated into semiconductor chips later. In this step, a large number of semiconductor elements in the wafer 30 can be collectively and efficiently laser marked in one laser marking process. Examples of lasers used in this step include gas lasers and solid-state lasers. Gas lasers include, for example, carbon dioxide lasers (CO ₂ lasers) and excimer lasers. Examples of solid-state lasers include Nd:YAG lasers.

Next, the dicing tape-integrated semiconductor back contact film X together with the wafer 30 and the ring frame 41 is held by the holder 42 of the device through the ring frame 41, and then, as shown in FIG. Cutting is performed by a dicing blade provided in (dicing process). In FIG. 5, the cut portion is schematically represented by a thick line. In this step, the wafer 30 is separated into chips 31, and the film 10 of the dicing tape-integrated semiconductor back surface adhesive film X is cut into small pieces of film 10'. As a result, the chip 31 with the film 10' for forming the chip back surface protective film, that is, the chip 31 with the film 10' is obtained.

When the pressure-sensitive adhesive layer 22 of the dicing tape 20 contains a radiation-curable pressure-sensitive adhesive, after the above-described dicing step, instead of the above-described radiation irradiation during the manufacturing process of the dicing tape-integrated semiconductor back adhesive film X, The pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays from the substrate 21 side. The integrated irradiation light amount is, for example, 50 to 500 mJ/cm ² . In the dicing tape-integrated semiconductor back adhesive film X, the area where irradiation is performed as a measure to reduce the adhesive strength of the adhesive layer 22 is, for example, the peripheral edge of the adhesive layer 22 within the film 10 lamination area, as shown in FIG. This is the area R excluding the part.

Next, a cleaning step of washing the chip 31 side of the dicing tape 20 with the film 10′-attached chips 31 using a washing liquid such as water, and an expanding step of increasing the separation distance between the film 10′-attached chips 31 are performed. , if necessary, as shown in FIG. 6, the chip 31 with the film 10' is picked up from the dicing tape 20 (pickup step). For example, after holding the dicing tape-integrated semiconductor back contact film X with the ring frame 41 on the holder 43 of the apparatus via the ring frame 41, the dicing tape 20 is applied to the chip 31 with the film 10′ to be picked up. In the lower part of the figure, the pin member 44 of the pick-up mechanism is lifted to push up through the dicing tape 20 , and then the suction jig 45 sucks and holds the dicing tape 20 . In the pick-up process, the thrust speed of the pin member 44 is, for example, 1 to 100 mm/sec, and the thrust amount of the pin member 44 is, for example, 50 to 3000 μm.

Next, as shown in FIG. 7, the chip 31 with the film 10' is flip-chip mounted on the mounting board 51. Next, as shown in FIG. Examples of the mounting board 51 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring board. Chip 31 is electrically connected to mounting substrate 51 via bumps 52 . Specifically, electrode pads (not shown) of the chip 31 on the circuit forming surface side and terminal portions (not shown) of the mounting substrate 51 are electrically connected via the bumps 52 . The bumps 52 are, for example, solder bumps. A thermosetting underfill agent 53 is interposed between the chip 31 and the mounting board 51 .

As described above, a semiconductor device can be manufactured using the dicing tape-integrated semiconductor back contact film X. FIG.

As described above, the film 10, which is the semiconductor back adhesion film provided in the dicing tape-integrated semiconductor back adhesion film X, generates heat within the range of 50 to 200 ° C. in differential scanning calorimetry at a temperature increase rate of 10 ° C./min. amount (first calorific value), and the calorific value within the range of 50 to 200 ° C. in differential scanning calorimetry at a temperature increase rate of 10 ° C./min after undergoing heat treatment at 130 ° C. for 2 hours ( second calorific value) (the amount of heat obtained by subtracting the second calorific value from the first calorific value) is 50 J/g or less. The first calorific value is the calorific value within the range of 50 to 200°C in differential scanning calorimetry at a temperature increase rate of 10°C/min for the film 10 that has not undergone heat treatment at 130°C for 2 hours. is. The second calorific value is the calorific value within the range of 50 to 200° C. in differential scanning calorimetry at a heating rate of 10° C./min for the film 10 that has undergone heat treatment at 130° C. for 2 hours. be. The configuration in which the difference between these calorific values (the calorific value obtained by subtracting the second calorific value from the first calorific value) in the film 10 is 50 J/g or less is advantageous when the semiconductor wafer to which the film is bonded is exposed to a high-temperature environment. The present inventors have found that this is suitable for suppressing warping of the wafer. For example, it is as shown in Examples and Comparative Examples below.

The calorific value within the range of 50 to 200° C. in the differential scanning calorimetry of the film 10 is mainly occupied by the calorific value (reaction heat quantity) due to the reaction between constituent components in the film. The difference between the first calorific value for the film 10 that has not undergone the heat treatment and the second calorific value for the film 10 that has undergone the heat treatment is 50 J / g or less. This means that the reaction progresses in the film 10 in an amount corresponding to the amount of heat generated or the amount of heat generated by the reaction, which is equal to or less than /g. That is, in the same configuration, the reaction has already progressed in the film 10 before the heat treatment to such an extent that the reaction progressing in the film 10 due to the heat treatment corresponds to a calorific value of 50 J / g or less (the high reaction rate in the film) or that the reaction does not progress easily in the film 10 by the heat treatment. Such a configuration of the film 10 is suitable for reducing the extent to which the film 10 undergoes reaction and shrinks when exposed to a high-temperature environment. Suitable for suppressing warping of the wafer when exposed. In the film 10 including a cured thermosetting layer (laser mark layer 11 in the above-described embodiment), the high reaction rate of the film 10, which is a film that adheres to the back surface of a semiconductor, is achieved by, for example, using a thermosetting catalyst ( This can be done by adjusting the compounding amount of the reaction accelerator), and by adjusting the heating temperature and heating time for heat curing when the film 10 is produced.

As described above, the film 10 included in the dicing tape-integrated semiconductor back contact film X is suitable for suppressing warping of the semiconductor wafer to which the film 10 is attached during the semiconductor device manufacturing process. From the viewpoint of suppressing such warpage, the difference in the amount of heat generated is preferably 30 J/g or less, more preferably 20 J/g or less, and more preferably 10 J/g or less.

As described above, the film 10 is a sample piece of the film 10 having a width of 10 mm. The ratio of the tensile storage modulus at 150°C measured under the elastic modulus measurement conditions after heat treatment at 130°C for 2 hours to the storage modulus is preferably 20 or less, more preferably 10. Below, more preferably 5 or less, more preferably 3 or less, more preferably 1.5 or less. Such a configuration is suitable for reducing the extent to which the film 10 shrinks due to exposure to a high-temperature environment. suitable for suppressing the occurrence of

As described above, the inorganic filler content of the entire film 10 is preferably 30% by mass or more, more preferably 40% by mass or more, and more preferably 50% by mass or more. Such a configuration is preferable for suppressing the aforementioned warping of the film 10 or the semiconductor wafer to which it is bonded.

As described above, the inorganic filler content of the entire film 10 is preferably less than 75% by weight. Such a configuration is suitable for ensuring printability by laser marking on the film 10 .

When the film 10 of the dicing tape-integrated semiconductor back adhesion film X has the above-described laser mark layer 11 (cured thermosetting layer), the glass transition temperature of the entire film 10 is preferably 100 to 100 as described above. 200°C. Such a configuration is suitable for reducing the stress generated by heat shrinkage in the film 10 and reducing the stress by narrowing the high-elasticity region.

In addition, as described above, the film 10 in the dicing tape-integrated semiconductor back surface adhesive film X preferably contains an epoxy resin having an epoxy equivalent of 150 to 900 g/eq in a proportion of 2 to 20% by mass, and the epoxy equivalent is It is preferably 150-700 g/eq. Such a configuration is suitable for securing good adhesiveness while suppressing the number of crosslinking points in the constituent resin material of the film 10 . In the film 10, shrinkage due to crosslinking reaction during heating tends to be suppressed as the number of crosslinking points in the constituent resin material is reduced.

[Example 1]
In the production of the semiconductor back adhesion film of Example 1, first, a first film that will form a laser mark layer (LM layer) and a second film that will form an adhesive layer (AH layer) are separately separated. was made.

In the preparation of the first film, first, 7 parts by mass of the first epoxy resin (trade name “JER YL980”, manufactured by Mitsubishi Chemical Corporation) and the second epoxy resin (trade name “KI-3000-4”, Tohto Kasei Co., Ltd.) 7 parts by mass, phenol resin (trade name “MEH-7851SS”, manufactured by Meiwa Kasei Co., Ltd.) 15 parts by mass, acrylic resin (trade name “Teisan Resin SG-P3”, manufactured by Nagase ChemteX Co., Ltd. ) 15 parts by mass, a filler (trade name “SO-25R”, Admatechs Co., Ltd.) 50 parts by mass, a thermosetting catalyst (trade name “Curesol 2PHZ”, manufactured by Shikoku Kasei Kogyo Co., Ltd.) 4 parts by mass, 2 parts by mass of a black dye (trade name “OIL BLACK BS” manufactured by Orient Chemical Industry Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, an applicator was used to apply the resin composition onto the silicone release-treated surface of a PET separator having a silicone release-treated surface to form a resin composition layer. Next, this composition layer is dried by heating at 130° C. for 2 minutes to form a 15 μm-thick first film (cured thermosetting layer, laser mark layer) on the PET separator. film) was produced.

In the preparation of the second film, first, 7.5 parts by mass of the first epoxy resin (trade name “JER YL980”, manufactured by Mitsubishi Chemical Corporation) and the second epoxy resin (trade name “KI-3000-4”, Toto Kasei Co., Ltd.) 7.5 parts by mass, phenol resin (trade name “MEH-7851SS”, Meiwa Kasei Co., Ltd.) 16.5 parts by mass, acrylic resin (trade name “Teisan Resin SG-P3”, Nagase ChemteX Co., Ltd.) 16.5 parts by mass, filler (trade name “SO-25R”, Admatechs Co., Ltd.) 50 parts by mass, black dye (trade name “OIL BLACK BS”, Orient Chemical Industry Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, an applicator was used to apply the resin composition onto the silicone release-treated surface of a PET separator having a silicone release-treated surface to form a resin composition layer. Next, this composition layer was dried by heating at 130° C. for 2 minutes to prepare a second film (film to form a non-thermosetting adhesive layer) having a thickness of 10 μm on the PET separator. .

And the 1st film on the PET separator and the 2nd film on the PET separator which were produced as mentioned above were laminated together using the laminator. Specifically, the exposed surfaces of the first and second films were bonded together under conditions of a temperature of 100° C. and a pressure of 0.6 MPa. As described above, the semiconductor back adhesion film of Example 1 was produced. The composition of each film in Example 1 and each of the Examples and Comparative Examples described below is listed in Table 1 (in Table 1, the composition of each layer is represented by the mass ratio of the components).

[Example 2]
In the preparation of the semiconductor back adhesion film of Example 2, first, 7.5 parts by mass of a first epoxy resin (trade name “JER YL980”, manufactured by Mitsubishi Chemical Corporation) and a second epoxy resin (trade name “KI- 3000-4”, manufactured by Tohto Kasei Co., Ltd.) 7.5 parts by mass, phenol resin (trade name “MEH-7851SS”, manufactured by Meiwa Kasei Co., Ltd.) 16.5 parts by mass, acrylic resin (trade name “Teisan Resin SG-P3", Nagase ChemteX Co., Ltd.) 16.5 parts by mass, filler (trade name "SO-25R", Admatechs Co., Ltd.) 50 parts by mass, black dye (trade name "OIL BLACK BS , manufactured by Orient Chemical Industry Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, an applicator was used to apply the resin composition onto the silicone release-treated surface of a PET separator having a silicone release-treated surface to form a resin composition layer. Next, this composition layer was dried by heating at 130° C. for 2 minutes. As described above, a 25 μm-thick semiconductor back adhesion film (non-thermosetting single-layer film) of Example 2 was produced on a PET separator.

[Example 3]
In the preparation of the semiconductor back adhesion film of Example 3, first, 25 parts by mass of a phenol resin (trade name “MEH-7851SS”, manufactured by Meiwa Kasei Co., Ltd.) and an acrylic resin (trade name “Teisan Resin SG-P3”, Nagase ChemteX Co., Ltd.) 13 parts by mass, filler (trade name “SO-25R”, Admatechs Co., Ltd.) 60 parts by mass, black dye (trade name “OIL BLACK BS”, Orient Chemical Industry Co., Ltd. (manufactured) was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid concentration of 28% by mass. Next, an applicator was used to apply the resin composition onto the silicone release-treated surface of a PET separator having a silicone release-treated surface to form a resin composition layer. Next, this composition layer was dried by heating at 130° C. for 2 minutes. As described above, a 25 μm-thick semiconductor back adhesion film (non-thermosetting single-layer film) of Example 3 was produced on a PET separator.

[Example 4]
The amount of the first epoxy resin (trade name “JER YL980”) was changed from 7.5 parts by mass to 3.5 parts by mass, and the blending of the second epoxy resin (trade name “KI-3000-4”) 3.5 parts by mass instead of 7.5 parts by mass, 8 parts by mass instead of 16.5 parts by mass of phenol resin (trade name "MEH-7851SS"), The amount of resin (trade name “Teisan Resin SG-P3”) was changed from 16.5 parts by mass to 8 parts by mass, and the amount of filler (trade name “SO-25R”) was changed to 50 parts by mass. In the same manner as the semiconductor back adhesion film of Example 2 except that 75 parts by mass was used instead of made.

[Comparative Example 1]
Except that the amount of the thermosetting catalyst (trade name "Cure Sol 2PHZ") was changed from 4 parts by mass to 0.5 parts by mass, and the film thickness was changed from 12.5 µm to 25 µm. In the same manner as the first film of Example 1, a semiconductor back adhesion film of Comparative Example 1 (cured thermosetting single-layer film) was produced.

<Difference in calorific value>
For each semiconductor back adhesion film of Examples 1 to 4 and Comparative Example ₁ , the calorific value Q was measured by differential scanning calorimetry using a differential scanning calorimeter (trade name "DSC Q2000", manufactured by TA Instruments). Examined. In addition, the semiconductor back adhesion film of each composite film of Examples 1 to 4 and Comparative Example 1 was subjected to heat treatment (standing at 130 ° C. in a constant temperature bath for 2 hours), and then a differential scanning calorimeter (product The calorific value Q ₂ was determined by differential scanning calorimetry performed using the name "DSC Q2000", manufactured by TA Instruments). In each differential scanning calorimetry measurement, the measurement environment was a nitrogen atmosphere, the measurement temperature range was -30°C to 300°C, and the temperature increase rate was 10°C/min. Then, regarding the exothermic peak appearing in the range of 50 to 200 ° C. in the DSC chart obtained by each measurement, the integrated value of the amount of heat above the baseline at 50 to 200 ° C. of the chart is defined as the calorific value (J / g). asked. Table 1 lists the calorific value Q ₁ (J/g), the calorific value Q ₂ (J/g), and the calorific value difference Q ₁ −Q ₂ (J/g) for each semiconductor backside adhesive film.

[Tensile storage modulus]
For each semiconductor back adhesion film of Examples 1 to 4 and Comparative Example 1, based on dynamic viscoelasticity measurement performed using a dynamic viscoelasticity measuring device (trade name "RSA3", manufactured by TA Instruments), 150 ° C. The tensile storage modulus E ₁ was determined. Further, for each semiconductor back adhesion film of Examples 1 to 4 and Comparative Example 1, after performing heat treatment (standing at 130 ° C. in a constant temperature bath for 2 hours), a dynamic viscoelasticity measuring device (trade name The tensile storage modulus E ₂ at 150° C. was determined based on the dynamic viscoelasticity measurement performed using "RSA3", manufactured by TA Instruments). A sample piece (width 10 mm×length 30 mm) to be measured was prepared by cutting out from a semiconductor back contact film that had not undergone heat treatment or from a semiconductor back contact film that had undergone heat treatment. In each measurement, the initial distance between the chucks for holding the sample piece was set to 20 mm, the measurement mode was set to the tension mode, the measurement environment was set to a nitrogen atmosphere, the measurement temperature range was set to 0°C to 200°C, and the frequency was set to 1 Hz. , the dynamic strain was set to 0.05%, and the heating rate was set to 10°C/min. Table 1 lists the tensile storage modulus E ₁ (MPa), the tensile storage modulus E ₂ (MPa), and the ratio E ₂ /E ₁ of these tensile storage moduli for each semiconductor back contact film.

<Glass-transition temperature>
The glass transition temperature of each semiconductor back contact film of Example 1 and Comparative Example 1 was examined by differential scanning calorimetry using a differential scanning calorimeter (trade name "DSC Q2000", manufactured by TA Instruments). In each differential scanning calorimetry measurement, the measurement environment was a nitrogen atmosphere, the measurement temperature range was -30°C to 300°C, and the temperature increase rate was 10°C/min. Table 1 shows the glass transition temperature Tg (°C) of each semiconductor back contact film of Example 1 and Comparative Example 1.

<Wafer warpage>
For each of the semiconductor back contact films of Examples 1 to 4 and Comparative Example 1, the extent to which warpage is induced when subjected to a heating test together with a silicon wafer was examined. Specifically, it is as follows.

First, a semiconductor back surface adhesive film was attached to a silicon wafer (thickness: 100 μm, diameter: 300 mm). Next, the silicon wafer with the semiconductor back adhesive film was heated in a constant temperature bath at 130° C. for 2 hours (heating test). The wafer with the semiconductor back adhesion film that had undergone this heating test was placed on a laboratory table having a horizontal table surface with the semiconductor back adhesion film positioned on the top side, and allowed to stand still for 2 hours. After that, a ruler was used to measure the distance between the highest position from the table surface and the table surface on the table facing surface of the wafer periphery. The measured value was defined as the amount of warpage (mm). The measured values are listed in Table 1.

<Printability evaluation>
The printability of each semiconductor back contact film of Examples 1 to 4 and Comparative Example 1 was examined as follows. First, a laser marking device (trade name “MD-S9920”, Keyence Corporation) was used to irradiate the semiconductor back adhesion film with a laser to perform marking by laser marking (semiconductor back adhesion of Example 1 For the film, printing was performed on the surface of the laser mark layer). In this laser marking, the laser power is 0.23 W, the marking speed is 300 mm/sec, and the laser frequency is 10 kHz. Next, using a microscope (trade name “Digital Microscope VHX-500”, manufactured by Keyence Corporation), the locations of the laser markings were observed (bright field observation). Characters (printing) engraved by laser marking must have clear contrast and be easily visible (first criterion), and the maximum depth of the engraved characters must be 1 μm or more (second criterion). When both criteria were satisfied, the printability was evaluated as "good", and when at least one of the first and second criteria was not satisfied, the printability was evaluated as "poor". Table 1 lists the evaluation results.

X dicing tape-integrated semiconductor back adhesion film 10, 10' film (semiconductor back adhesion film)
11 laser mark layer 12 adhesive layer 20 dicing tape 21 base material 22 adhesive layer W, 30 wafer 31 chip

Claims (6)

Heat generation in the range of 50 to 200 ° C in differential scanning calorimetry at a temperature increase rate of 10 ° C./min, and after heat treatment at 130 ° C. for 2 hours, at a temperature increase rate of 10 ° C./min. The difference from the calorific value in the range of 50 to 200 ° C. in differential scanning calorimetry is 50 J / g or less ,
The tensile storage modulus at 150°C measured for a semiconductor back contact film sample piece with a width of 10 mm under the conditions of an initial chuck distance of 20 mm, a frequency of 1 Hz, and a heating rate of 10°C/min. The ratio of the tensile storage modulus at 150° C. measured under the conditions of an initial chuck distance of 20 mm, a frequency of 1 Hz, and a heating rate of 10° C./min for a semiconductor back contact film sample piece having a width of 10 mm after the heat treatment is , 20 or less . 2. The semiconductor back adhesive film according to claim 1 , containing the inorganic filler in a proportion of 30% by mass or more. 3. The semiconductor back adhesive film according to claim 1, containing an inorganic filler in a proportion of 75% by mass or less. The semiconductor back contact film according to any one of claims 1 to 3 , which has a glass transition temperature of 100 to 200°C. 5. The semiconductor back adhesive film according to claim 1, containing 2 to 20% by mass of an epoxy resin having an epoxy equivalent of 150 to 900 g/eq. a dicing tape having a laminated structure including a substrate and an adhesive layer;
A dicing tape-integrated semiconductor back adhesive film, comprising: the semiconductor back adhesive film according to any one of claims 1 to 5 , which is releasably adhered to the adhesive layer of the dicing tape.

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