CN106189897A - Diced chip bonding film, the manufacture method of semiconductor device and semiconductor device - Google Patents

Diced chip bonding film, the manufacture method of semiconductor device and semiconductor device Download PDF

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Publication number
CN106189897A
CN106189897A CN201610366194.6A CN201610366194A CN106189897A CN 106189897 A CN106189897 A CN 106189897A CN 201610366194 A CN201610366194 A CN 201610366194A CN 106189897 A CN106189897 A CN 106189897A
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China
Prior art keywords
film
chip
adhering film
methyl
sheet
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CN201610366194.6A
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Chinese (zh)
Inventor
大西谦司
三隅贞仁
宍户雄郎
宍户雄一郎
木村雄大
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Nitto Denko Corp
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Nitto Denko Corp
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Publication of CN106189897A publication Critical patent/CN106189897A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J161/00—Adhesives based on condensation polymers of aldehydes or ketones; Adhesives based on derivatives of such polymers
    • C09J161/04—Condensation polymers of aldehydes or ketones with phenols only
    • C09J161/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/241—Polyolefin, e.g.rubber
    • C09J7/243—Ethylene or propylene polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/255—Polyesters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

The present invention relates to diced chip bonding film, the manufacture method of semiconductor device and semiconductor device.The present invention provides and can prevent the diced chip bonding film etc. that peeling off of coverlay is bad, be prevented from the electrostatic breakdown of semiconductor chip.The present invention relates to a kind of diced chip bonding film, it is formed as web-like.Diced chip bonding film comprises coverlay and the one-piece type adhering film of cutting sheet being arranged on coverlay.The cutting one-piece type adhering film of sheet comprises cutting sheet, described cutting sheet comprise with the 1st and with the 1st face the 2nd substrate layer defining two sides in opposite directions and with the 1st adhesive phase contacted.Cutting the one-piece type adhering film of sheet also comprise adhering film, described adhering film with the 1st interarea contacted with adhesive phase and with the 1st interarea the 2nd interarea in opposite directions to define two sides.The sheet resistance value of the 2nd is 1.0 × 1011Ω/below sq..The sheet resistance value of the 2nd interarea is 1.0 × 1012Ω/more than sq..

Description

Diced chip bonding film, the manufacture method of semiconductor device and semiconductor device
Technical field
The present invention relates to diced chip bonding film, the manufacture method of semiconductor device and semiconductor device.
Background technology
Known a kind of diced chip bonding film, it has substrate layer, the adhesive phase being arranged on substrate layer and configuration Adhering film (for example, see patent documentation 1) over the binder layer.Substrate layer can be with the contact surface contacted with adhesive phase And define two sides with the contact surface back side in opposite directions.
In recent years, with the high performance of semiconductor chip, electrostatic breakdown is just becoming problem.In order to prevent electrostatic breakdown, Have and improve the technology of antistatic property by interpolation conductive material in adhesive phase.
Additionally, in order to give electric conductivity to adhering film, the most oriented adhering film adds the technology of conductive material.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2015-5636 publication
Summary of the invention
The problem that invention is to be solved
In adhesive phase, add the technology of conductive material there is following problem: conductive material can be when cutting Disperse in device and be attached to semiconductor crystal wafer, semiconductor chip.When extension, conductive material the most also can disperse.
Adhering film is used for conduction when purposes buried by lead-in wire by the technology existence adding conductive material in adhering film Property material can promote the problem of corrosion of lead-in wire.The problem that when there is also cutting, conductive material disperses.
Additionally, in diced chip bonding film, coverlay cannot be peeled off sometimes smoothly.The present inventor is bad to peeling off Reason conduct in-depth research, it was found that the charged meeting of the back side of substrate layer and coverlay causes the stripping of coverlay not Good.
It is an object of the invention to provide can prevent coverlay peel off bad, be prevented from semiconductor chip electrostatic break Bad diced chip bonding film.
The present invention also aims to provide the manufacture method of the semiconductor device using diced chip bonding film.This The semiconductor device that bright purpose also resides in offer use diced chip bonding film and obtains.
For solving the scheme of problem
The present invention relates to diced chip bonding film, it is formed as web-like.The diced chip bonding film of the present invention comprises Coverlay and the one-piece type adhering film of cutting sheet being arranged on coverlay.The cutting one-piece type adhering film of sheet comprises cutting sheet, Described cutting sheet comprise with the 1st and with the 1st face the 2nd substrate layer defining two sides in opposite directions and contact with the 1st viscous Mixture layer.The cutting one-piece type adhering film of sheet also comprises adhering film, and described adhering film is with the 1st master contacted with adhesive phase Face and define two sides with the 1st interarea the 2nd interarea in opposite directions.The sheet resistance value of the 2nd is 1.0 × 1011Ω/below sq..By In for 1.0 × 1011Ω/below sq., therefore, it is possible to prevent the stripping of coverlay bad.The sheet resistance value of the 2nd interarea is 1.0 ×1012Ω/more than sq..Due to for 1.0 × 1012Ω/more than sq., leakage current when therefore can prevent encapsulation etc., it is possible to anti- The only electrostatic breakdown of semiconductor chip.
Preferably, substrate layer comprises the 1st substrate layer with the 1st and the 2nd substrate layer with the 2nd.Preferably It is that the 2nd substrate layer contains conductive component.Preferably, the thickness of the 2nd substrate layer is 1 μm～30 μm.Preferably, conduction Property composition is organic system conductive component.Preferably, the 2nd substrate layer also comprises choosing free polyethylene, polypropylene, ethylene-second The resin of more than a kind in the group of vinyl acetate copolymer composition.
Preferably, the elongation at break of cutting sheet is more than 500%.
Preferably, adhering film comprises epoxy resin or phenolic resin.Preferably, adhering film comprises acrylic compounds Resin.Preferably, adhering film is more than 0.2N and below 3.0N the adhesion strength of 25 DEG C.
Preferably, coverlay is pet film.Preferably, the thickness of coverlay is 20 μm ～75 μm.
The invention still further relates to the manufacture method of semiconductor device, it includes following operation: prepare diced chip bonding film Operation；Semiconductor crystal wafer is crimped on the operation of the adhering film of the cutting one-piece type adhering film of sheet；By semiconductor crystal wafer After being crimped on the operation of adhering film, form the operation of chip joint chip by carrying out chip separation；With by chip Joint chip is crimped on the operation of adherend.The operation that semiconductor crystal wafer is crimped on adhering film includes peeling off from coverlay The step of the cutting one-piece type adhering film of sheet.Chip joint chip comprises semiconductor chip and configures on a semiconductor die Film like bonding agent.
The invention still further relates to semiconductor device.
Accompanying drawing explanation
Fig. 1 is the schematic top plan view of diced chip bonding film.
Fig. 2 is the schematic cross-section of the local of diced chip bonding film.
Fig. 3 is the schematic cross-section of the manufacturing process of semiconductor device.
Fig. 4 is the schematic cross-section of the manufacturing process of semiconductor device.
Fig. 5 is the schematic cross-section of the manufacturing process of semiconductor device.
Fig. 6 is the schematic cross-section of the manufacturing process of semiconductor device.
Fig. 7 is the schematic cross-section of the local of the diced chip bonding film in variation 4.
Fig. 8 is the schematic cross-section of the manufacturing process of the semiconductor device in variation 7.
Fig. 9 is the schematic cross-section of the manufacturing process of the semiconductor device in variation 8.
Figure 10 is the schematic cross-section of the cutting one-piece type adhering film of sheet in embodiment.
Description of reference numerals
1 diced chip bonding film
11 adhering films
11a the 1st interarea
11b the 2nd interarea
12 cutting sheets
13 coverlays
The 71 cutting one-piece type adhering films of sheet
121 substrate layers
121a the 1st
121b the 2nd
1211 the 1st substrate layers
1212 the 2nd substrate layers
122 adhesive phases
122A contact site
122B periphery
4 semiconductor crystal wafers
5 chip joint chips
41 semiconductor chips
111 film like bonding agents
6 adherends
7 bonding wires
8 potting resins
61 adherends
606 substrates
607 bonding wires
611 adhesive linkages
641 semiconductor chips
Detailed description of the invention
The present invention is described in detail for embodiment given below, but the present invention is not limited in these embodiments.
[embodiment 1]
(diced chip bonding film 1)
As it is shown in figure 1, diced chip bonding film 1 is formed as web-like.
Diced chip bonding film 1 comprises coverlay 13 and the one-piece type adhering film of cutting sheet being arranged on coverlay 13 71a, 71b, 71c ..., 71m (hereinafter collectively referred to as " the cutting one-piece type adhering film of sheet 71 ").The cutting one-piece type adhering film of sheet Distance, cutting sheet one-piece type adhering film 71b between 71a and cutting sheet one-piece type adhering film 71b are one-piece type with cutting sheet Between adhering film 71c distance ... cutting sheet one-piece type adhering film 71l with cutting sheet one-piece type adhering film 71m it Between distance be certain.
As in figure 2 it is shown, the cutting one-piece type adhering film of sheet 71 comprise cutting sheet 12 and be arranged on cutting sheet 12 bonding Thin film 11.Cutting sheet 12 comprises substrate layer 121 and the adhesive phase 122 being arranged on substrate layer 121.Substrate layer 121 is with viscous Mixture layer 122 contact the 1st 121a and define two sides with the 1st 121a the 2nd 121b in opposite directions.Adhering film 11 with Adhesive phase 122 contact the 1st interarea 11a and define two sides with the 1st interarea 11a the 2nd interarea 11b in opposite directions.2nd interarea 11b contacts with coverlay 13.
The sheet resistance value of the 2nd 121b is 1.0 × 1011Ω/below sq., preferably 8.0 × 1010Ω/below sq.. Due to for 1.0 × 1011Ω/below sq., therefore, it is possible to prevent the stripping of coverlay 13 bad.The sheet resistance value of the 2nd 121b Lower limit for example, 1.0 × 105Ω/sq.、1.0×107Ω/sq.、1.0×108Ω/sq. etc..
The glossiness of the 2nd 121b is preferably 1～20.
The sheet resistance value of the 2nd interarea 11b is 1.0 × 1012Ω/more than sq., preferably 1.0 × 1014Ω/more than sq.. Due to for 1.0 × 1012Ω/more than sq., therefore can prevent encapsulation time etc. leakage current, it is possible to prevent the quiet of semiconductor chip Electrodisintegration.The upper limit for example, 1.0 × 10 of the sheet resistance value of the 2nd interarea 11b17Ω/sq.、1.0×1018Ω/sq. etc..
The elongation at break of cutting sheet 12 is preferably more than 500%.If more than 500%, then autgmentability is good.Cutting The mist degree of sheet 12 is preferably 45%～95%.
The thickness of substrate layer 121 is preferably 50 μm～150 μm.
Substrate layer 121 comprises the 1st substrate layer 1211 with the 1st 121a.1st substrate layer 1211 can be with the 1st 121a and define two sides with the 1st 121a hidden surface in opposite directions.Substrate layer 121 also comprises the 2nd base material with the 2nd 121b Layer 1212.2nd substrate layer 1212 contacts with the hidden surface of the 1st substrate layer 1211.
1st substrate layer 1211 comprises resin.As resin, can list: polyethylene, polypropylene, ethane-acetic acid ethyenyl ester Copolymer (EVA) etc..Owing to showing good autgmentability and preferably polyethylene, polypropylene, ethylene-vinyl acetate c Thing.From the perspective of autgmentability difference, polyethylene terephthalate is undesirable.
In the case of 1st substrate layer 1211 comprises conductive component, conductive component can be when cutting in device sometimes Disperse.It is therefore preferable that the 1st substrate layer 1211 is without conductive component.
The thickness of the 1st substrate layer 1211 is preferably 30 μm～150 μm.
Preferably the 2nd substrate layer 1212 comprises conductive component.This is because, conductive component can reduce the 2nd 121b Sheet resistance value.
As conductive component, organic system conductive component, inorganic system conductive component etc. can be listed.Organic system conducts electricity Property composition owing to being not easy to come off, easily with mixed with resin and preferred.As organic system conductive component, electric conductivity can be listed Macromolecule.
Preferably the 2nd substrate layer 1212 comprises resin.As resin, can list: polyethylene, polypropylene, ethylene-acetate second Enoate copolymer etc..Polyethylene, polypropylene, vinyl-vinyl acetate copolymer are owing to easily mixing with organic system conductive component Merge and show good autgmentability and preferred.From the perspective of autgmentability difference, polyethylene terephthalate is the most excellent Choosing.
The thickness of the 2nd substrate layer 1212 is preferably 1 μm～30 μm.
The thickness of the 1st substrate layer 1211 and ratio (thickness/the 2nd of the 1st substrate layer 1211 of the thickness of the 2nd substrate layer 1212 The thickness of substrate layer 1212) it is preferably 1～30.
Adhesive phase 122 comprises the contact site 122A contacted with adhering film 11.Adhesive phase 122 also comprises to be arranged in and connects The periphery 122B of the periphery of contact portion 122A.Contact site 122A is cured by radiation.On the other hand, periphery 122B tool There is the character solidified by radiation.As radiation, preferably ultraviolet.
Adhesive phase 122 is formed by binding agent, has cohesive.As this binding agent, it is not particularly limited, permissible Suitably select from known binding agent.Specifically, as binding agent, such as, can suitably select to make apparatus in the middle of following There is a binding agent of described characteristic: acrylic adhesives, rubber adhesive, vinyl alkyl ethers binding agent, silicone Binding agent, polyester adhesive, polyamide-based binding agent, polyurethane binding, fluorine class binding agent, Styrene-diene block Copolymer analog binding agent, the creep properties of the hot melt property resin being compounded with fusing point less than about 200 DEG C in these binding agents change The known binding agent such as good figure binding agent (for example, see Japanese Laid-Open Patent Publication 56-61468 publication, Japanese Laid-Open Patent Publication 61-174857 Number publication, Japanese Laid-Open Patent Publication 63-17981 publication, Japanese Laid-Open Patent Publication 56-13040 publication etc.).Additionally, as binding agent, Radiation curable binding agent (or energy ray-curable binding agent), thermal expansivity binding agent can also be used.Binding agent can To be used alone or two or more be applied in combination.
As binding agent, can use acrylic adhesives, rubber adhesive aptly, acrylic adhesives is outstanding For suitably.As acrylic adhesives, can list to use one kind or two or more (methyl) alkyl acrylate as list The acrylic adhesives of polymer based on the acrylic polymer (homopolymer or copolymer) of body composition.
As (methyl) alkyl acrylate in acrylic adhesives, include, for example out: (methyl) acrylic acid first Ester, (methyl) ethyl acrylate, (methyl) propyl acrylate, (methyl) isopropyl acrylate, (methyl) butyl acrylate, (first Base) Isobutyl 2-propenoate, (methyl) sec-butyl acrylate, (methyl) tert-butyl acrylate, (methyl) amyl acrylate, (methyl) Hexyl 2-propenoate, (methyl) heptylacrylate, (methyl) 1-Octyl acrylate, (methyl) 2-EHA, (methyl) third The different monooctyl ester of olefin(e) acid, (methyl) acrylic acid nonyl ester, (methyl) acrylic acid different nonyl ester, (methyl) decyl acrylate, (methyl) acrylic acid Isodecyl ester, (methyl) acrylic acid undecyl ester, (methyl) dodecylacrylate, (methyl) tridecyl acrylate, (methyl) acrylic acid myristyl ester, (methyl) acrylic acid pentadecyl ester, (methyl) aliphatic acrylate, (methyl) third Olefin(e) acid heptadecyl ester, (methyl) octadecyl acrylate, (methyl) acrylic acid nonadecyl ester, (methyl) acrylic acid 20 Arrcostab etc. (methyl) alkyl acrylate etc..As (methyl) alkyl acrylate, the carbon number being suitably alkyl is 4～18 (methyl) alkyl acrylate.It addition, the alkyl of (methyl) alkyl acrylate can be any one in straight or branched.
It addition, in order to improve cohesiveness, thermostability, bridging property etc., acrylic polymer can contain as desired Corresponding to can be with the unit of other monomer components (co-polymerized monomer composition) of (methyl) alkyl acrylate copolymer.As this Co-polymerized monomer composition, include, for example out: (methyl) acrylic acid (acrylic acid, methacrylic acid), carboxyethyl acrylates, third The carboxyl group-containing monomers such as olefin(e) acid carboxyl pentyl ester, itaconic acid, maleic acid, fumaric acid .beta.-methylacrylic acid；Maleic anhydride, itaconic anhydride etc. are containing acid Anhydride group monomer；(methyl) 2-(Acryloyloxy)ethanol, (methyl) Hydroxypropyl acrylate, (methyl) hy-droxybutyl, (methyl) propylene The acid own ester of hydroxyl, (methyl) acrylic acid hydroxyl monooctyl ester, (methyl) acrylic acid hydroxyl ester in the last of the ten Heavenly stems, (methyl) dihydroxypropyl lauryl, methyl-prop The hydroxyl monomers such as olefin(e) acid (4-Hydroxymethyl-cyclo-hexyl) methyl ester；Styrene sulfonic acid, allyl sulphonic acid, 2-(methyl) acryloyl Amine-2-methyl propane sulfonic acid, (methyl) acrylamide propane sulfonic acid, (methyl) sulfopropyl acrylate, (methyl) acryloxy naphthalene Sulfonic acid etc. are containing sulfonic group monomer；The phosphorous acid-based monomers such as 2-hydroxylethyl acyl phosphate；(methyl) acrylamide, N, N-bis- Methyl (methyl) acrylamide, N-butyl (methyl) acrylamide, N-methylol (methyl) acrylamide, N-hydroxymethyl-propane (N-replacement) the amide-type monomers such as (methyl) acrylamide；(methyl) acrylate, (methyl) acrylic acid N, N-diformazan (methyl) acrylate class monomers such as amino ethyl ester, (methyl) tbutylaminoethylacrylate；(methyl) propylene Acid (methyl) alkoxyalkyl acrylate class monomer such as methoxy acrylate, (methyl) ethoxyethyl acrylate；Acrylonitrile, first The cyanoacrylate monomers such as base acrylonitrile；(methyl) glycidyl acrylates etc. are containing epoxy radicals acrylic monomer；Benzene second The styrene monomer such as alkene, α-methyl styrene；The vinyl esters monomer such as vinyl acetate, propionate；Isoprene, fourth The olefin monomer such as diene, isobutene.；The ethylene ether type monomer such as vinyl Ether；NVP, methyl ethylene pyrroles Alkanone, vinylpyridine, vinylpiperidone, vinyl pyrimidine, vinyl piperazine, vinylpyrazine, vinyl pyrrole, ethylene The nitrogen containing monomers such as base imidazoles, vinyl azoles, polyvinyl morpholinone, N-vinylcarboxylic acid amide type, N-caprolactam；N- The Malaysias such as N-cyclohexylmaleimide, N-isopropylmaleimide, N-lauryl maleimide, N-phenylmaleimide Acid imide monomer；N-methyl clothing health acid imide, N-ethyl clothing health acid imide, N-butyl clothing health acid imide, N-octyl group clothing health acyl The clothing health acid imides such as imines, N-2-ethylhexyl clothing health acid imide, N-cyclohexyl clothing health acid imide, N-lauryl clothing health acid imide Class monomer；N-(methyl) acryloyl-oxy methylene butanimide, N-(methyl) acryloyl group-6-oxygen hexa-methylene succinyl The butanimide class monomers such as imines, N-(methyl) acryloyl group-8-oxygen eight methylene butanimide；(methyl) acrylic acid gathers Ethylene glycol, (methyl) acrylic acid polypropylene glycol, (methyl) methoxyethyl ethylene glycol, (methyl) methoxyethyl poly-the third two The glycols acrylate monomers such as alcohol；(methyl) tetrahydrofurfuryl acrylate, fluorine (methyl) acrylate, organosilicon (methyl) propylene Acid esters etc. have the acrylic ester monomer of heterocycle, halogen atom, silicon atom etc.；Hexanediol two (methyl) acrylate, (gathering) Ethylene glycol bisthioglycolate (methyl) acrylate, (gathering) propylene glycol two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, season Penta tetrol two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylolmethane three (methyl) acrylate, Dipentaerythritol six (methyl) acrylate, epoxy acrylate, polyester acrylate, urethane acrylate, diethyl The polyfunctional monomers etc. such as alkenyl benzene, butyl two (methyl) acrylate, hexyl two (methyl) acrylate.These co-polymerized monomers Composition can use one kind or two or more.
When using radiation curable binding agent (or energy ray-curable binding agent) as binding agent, as radiation Curing adhesive (compositions), include, for example out: employ in polymer lateral chain or main chain or main chain terminal has certainly By the radiation curable binding agent of the inherent type of polymer based on the polymer of base reactivity carbon-to-carbon double bond, in bonding Compounded with ultra-violet solidified monomer component, the radiation curable binding agent etc. of oligomer composition in agent.Additionally, use heat When dilatancy binding agent is as binding agent, as thermal expansivity binding agent, include, for example out and comprise binding agent and foaming agent (spy Not heat-expandable microsphere) thermal expansivity binding agent etc..
Preferably monomer component is 2-EHA.Preferably acrylic adhesives comprises and has carbamate The acrylic polymer of key.
Adhesive phase 122 can comprise various additive (such as resin of tackification, coloring agent, viscosifier, extender, filling Material, plasticizer, age resistor, antioxidant, surfactant, cross-linking agent etc.).
Adhesive phase 122 such as can utilize following conventional process to be formed: is needed with regarding by binding agent (pressure adhesive) The mixing such as solvent depending on Yaoing, other additives, form the layer of lamellar.Specifically, such as can be by shapes such as following methods Composite adhesives layer 122: substrate layer will be coated on containing binding agent and solvent, the mixture of other additives depended on the needs Method on 121, forms adhesive phase 122 at the upper coating mixture of suitable barrier film (peeling paper etc.) and is transferred (transfer) Method to substrate layer 121.
The thickness of adhesive phase 122 is preferably more than 3 μm, more than more preferably 5 μm.The thickness of adhesive phase 122 is preferred It is below 50 μm, below more preferably 30 μm.It addition, adhesive phase 122 can be formed as multilamellar shape.
(adhering film 11)
Adhering film 11 possesses Thermocurable.
Adhering film 11 is preferably 0.2N～3.0N the adhesion strength of 25 DEG C.If 0.2N～3.0N, then pick Well.
Adhering film 11 120 DEG C loss modulus G " be preferably 2KPa～20KPa.If more than 2KPa, then may be used To prevent the prominent of adhering film 11 when chip engages.If below 20KPa, then when chip engages, adhering film 11 is to quilt The wettability of viscous thing is good.
Adhering film 11 comprises resinous principle.As resinous principle, thermoplastic resin, thermosetting resin etc. can be listed.
Preferred thermoplastic resin is acrylic resin.
As acrylic resin, it is not particularly limited, can list: to have carbon number less than 30, particularly carbon number 4 ～18 straight or branched alkyl acrylic or methacrylic acid ester in the one kind or two or more polymerization as composition Thing (acrylic copolymer) etc..As aforesaid alkyl, include, for example out: methyl, ethyl, propyl group, isopropyl, normal-butyl, The tert-butyl group, isobutyl group, amyl group, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl group, iso-octyl, nonyl, different nonyl Base, decyl, isodecyl, undecyl, lauryl, tridecyl, myristyl, stearyl, octadecyl or dodecyl Deng.
Additionally, as other monomers of formation polymer (acrylic copolymer), be not particularly limited, such as can arrange Enumerate: acrylic acid, methacrylic acid, carboxyethyl acrylates, acrylic acid carboxyl pentyl ester, itaconic acid, maleic acid, fumaric acid or bar The carboxyl group-containing monomer of bean acid or the like, the various anhydride monomers such as maleic anhydride or itaconic anhydride, (methyl) acrylic acid-2-hydroxyl second Ester, (methyl) 2-hydroxypropyl acrylate, (methyl) acrylic acid-4-hydroxybutyl, (methyl) acrylic acid own ester of-6-hydroxyl, (methyl) acrylic acid-8-hydroxyl monooctyl ester, (methyl) acrylic acid-10-hydroxyl ester in the last of the ten Heavenly stems, (methyl) acrylic acid-12-hydroxylauric ester or The various hydroxyl monomers such as acrylic acid (4-hydroxymethyl cyclohexyl)-methyl ester, styrene sulfonic acid, allyl sulphonic acid, 2-(methyl) Acrylamide-2-methyl propane sulfonic, (methyl) acrylamide propane sulfonic acid, (methyl) acrylic acid sulphur propyl ester or (methyl) acryloyl-oxy Base LOMAR PWA EINECS 246-676-2 etc. are various containing sulfonic group monomer, or the various phosphorous acid-based monomers such as 2-hydroxylethyl acyl phosphate.
In the middle of acrylic resin, preferable weight-average molecular weight is more than 100,000, more preferably 300,000～3,000,000, further It is preferably 500,000～2,000,000.If this is because, in this numerical range, then cementability and excellent heat resistance.Need explanation It is that weight average molecular weight is the value being measured by GPC (osmogels chromatograph) and being calculated by polystyrene conversion.
Acrylic resin preferably comprises functional group.As functional group, include, for example out: hydroxyl, carboxyl, itrile group etc.. Wherein, preferred itrile group.
The content of the thermoplastic resin in resinous principle 100 weight % is preferably more than 10 weight %, more preferably 20 weights Amount more than %.More than 10 weight %, then flexible good.The content of the thermoplastic resin in resinous principle 100 weight % It is preferably below 80 weight %, below more preferably 70 weight %.
As thermosetting resin, can list: epoxy resin, phenolic resin etc..
As epoxy resin, it is not particularly limited, such as, can use: bisphenol A-type, bisphenol-f type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorenes type, phenol novolak type, ortho cresol novolak type, three Difunctional epoxy resin, the polyfunctional epoxy resins such as hydroxy phenyl methane type, four phenolic group ethane types, or hydantoin type, three contractings The epoxy resin of water glyceryl isocyanurate type or glycidic amine type etc..In the middle of these epoxy resin, particularly preferred phenolic aldehyde Type epoxy resin, biphenyl type epoxy resin, trihydroxy benzene methylmethane type resin or four phenolic group ethane type epoxy resin.This is Reactivity with phenolic resin as firming agent rich due to, these epoxy resin, the excellence such as thermostability.
The epoxide equivalent of epoxy resin is preferably more than 100g/eq., more preferably more than 120g/eq..Epoxy resin Epoxide equivalent is preferably below 1000g/eq., more preferably below 500g/eq..
It should be noted that the epoxide equivalent of epoxy resin can be carried out by the method for regulation in JIS K 7236-2009 Measure.
Phenolic resin plays the effect of the firming agent of epoxy resin, include, for example out: phenol resol resins, phenol The phenolic aldehyde such as aralkyl resin, cresol novolac resin, t-butylphenol novolac resin, nonyl phenol novolac resin Varnish-type phenolic resin, first rank novolac type phenolic resin, poly-to polyoxy styrene etc. such as oxygen styrene.These phenolic resin is worked as In, particularly preferred phenol resol resins, phenol aralkyl resin.This is because, the connection of semiconductor device can be improved Reliability.
The hydroxyl equivalent of phenolic resin is preferably more than 150g/eq., more preferably more than 200g/eq..Phenolic resin Hydroxyl equivalent is preferably below 500g/eq., more preferably below 300g/eq..
For the compounding ratio of epoxy resin Yu phenolic resin, such as suitably with the hydroxyl in phenolic resin relative to epoxy The mode that epoxy radicals 1 equivalent is 0.5～2.0 equivalents in resinous principle is compounded.More appropriately 0.8～1.2 equivalents.That is, this Be due to, if both compounding ratios are not in this scope, the most do not carry out sufficient curing reaction, the characteristic of solidfied material become hold Easily deterioration.
Epoxy resin and the total content of phenolic resin in resinous principle 100 weight % are preferably more than 20 weight %, More than more preferably 30 weight %.The total content of epoxy resin and phenolic resin is preferably below 90 weight %, more preferably Below 80 weight %.
Preferably adhering film 11 comprises inorganic filler.
As inorganic filler, include, for example out: silicon dioxide, clay, Gypsum Fibrosum, calcium carbonate, barium sulfate, aluminium oxide, Beryllium oxide, carborundum, silicon nitride, aluminum, copper, silver, gold, nickel, chromium, lead, stannum, zinc, palladium, scolding tin, carbon etc..Wherein, preferred titanium dioxide Silicon, aluminium oxide, silver etc., more preferably silicon dioxide.
The mean diameter of inorganic filler is preferably 0.001 μm～1 μm.The mean diameter of filler can be by following method It is measured.
The mensuration of the mean diameter of inorganic filler
Adhering film 11 is put into crucible, within 2 hours, makes it be ashed with 700 DEG C of calcinations under air atmosphere.Make gained ash It is dispersed in pure water and carries out 10 minutes ultrasonic Treatment, use laser diffraction and scattering formula particle size distribution device (Beckman Coulter, Inc. manufacture, " LS 13 320 "；Damp process) obtain mean diameter.
The content of the inorganic filler in adhering film 11 is preferably more than 0 weight %, and more than more preferably 1 weight %, More preferably more than 3 weight %, more than the most preferably 20 weight %.Inorganic filler in adhering film 11 Content is preferably below 85 weight %, below more preferably 20 weight %, more preferably below 15 weight %.
Adhering film 11 can also suitably contain compounding agent conventional in thin film fabrication in addition to aforesaid ingredients, such as Silane coupler, curing accelerator, cross-linking agent etc..
Adhering film 11 is containing in the case of conductive component, and conductive component can fly in device when cutting sometimes Dissipate.Sometimes conductive component also can promote the corrosion of lead-in wire.It is therefore preferable that adhering film 11 is without conductive component.
Adhering film 11 can manufacture with usual way.Such as can make the bonding agent combination containing aforementioned each composition Thing solution, after adhesive composite solution is coated on base material barrier film in the way of becoming specific thickness formation coated film, dry Dry coated film, thus manufactures adhering film 11.
As the solvent used in adhesive composite solution, it is not particularly limited, is preferably able to equal for aforementioned each composition Dissolve evenly, mixing or scattered organic solvent.Include, for example out: dimethylformamide, dimethyl acetylamide, N-methyl pyrrole The ketones solvents such as pyrrolidone, acetone, butanone, Ketohexamethylene, toluene, dimethylbenzene etc..Coating process is not particularly limited.As The method of solvent coating, include, for example out: die coating machine, gravure coater, roll coater, reverse coating machine, comma coater, pipe Shape knife type coater (pipe doctor coater), silk screen printing etc..Wherein, come from the angle that the uniformity of coating thickness is high See, preferably die coating machine.
As base material barrier film, it is possible to use polyethylene terephthalate (PET), polyethylene, polypropylene, by fluorine system The removers such as remover, long chain alkyl acrylate class remover have carried out the plastic sheeting of surface coating, paper etc..As bonding The coating process of agent composition solution, include, for example out: the coating of roll coating, silk screen, rotogravure application etc..Additionally, to coated film Drying condition be not particularly limited, such as can be to carry out baking temperature 70～160 DEG C, drying time 1～5 minutes.
As the manufacture method of adhering film 11, such as, and by the mixing of aforementioned each composition gained mixture is entered with blender The compressing method etc. manufacturing adhering film 11 of row is also suitable.As blender, planetary mixer etc. can be listed.
The thickness of adhering film 11 is preferably more than 2 μm, more than more preferably 5 μm, more preferably more than 10 μm.Viscous The thickness connecing thin film 11 is preferably below 200 μm, below more preferably 150 μm, more preferably below 100 μm.
Adhering film 11 is used for manufacturing semiconductor device.Specifically, adhering film 11 engages purposes for chip.
(coverlay 13)
As coverlay 13, polyethylene terephthalate (PET) thin film etc. can be listed.Coverlay 13 is preferably real Execute the pet film that the demoulding processes.
The thickness of coverlay 13 is preferably 20 μm～75 μm, more preferably 25 μm～50 μm.
(manufacture method of semiconductor device)
As it is shown on figure 3, semiconductor crystal wafer 4 to be crimped on the cutting one-piece type adhering film of sheet 71.As semiconductor crystal wafer 4, Can list: Silicon Wafer, silicon carbide wafer, compound semiconductor wafer etc..As compound semiconductor wafer, can list Gallium nitride wafer etc..
As compression bonding method, include, for example out and carry out, by pressing means such as crimping rollers, the method etc. that presses.
Crimping temperature (sticking temperature) is preferably more than 35 DEG C, more preferably more than 37 DEG C.The upper limit of crimping temperature is preferred Relatively low, preferably less than 50 DEG C, more preferably less than 45 DEG C.By crimping with low temperature, it is possible to prevent semiconductor crystal wafer 4 Heat affecting, it is possible to suppression semiconductor crystal wafer 4 warpage.Additionally, pressure is preferably 1 × 105Pa～1 × 107Pa, more preferably 2 ×105Pa～8 × 106Pa。
As shown in Figure 4, chip joint chip 5 is formed by semiconductor crystal wafer 4 is cut.Chip joint core Sheet 5 includes semiconductor chip 41 and the film like bonding agent 111 being arranged on semiconductor chip 41.Semiconductor chip 41 includes electricity Pole pole plate.As the material of electrode pad, aluminum etc. can be listed.This operation can use and carry out cutting until cutting sheet one Type adhering film 71, be referred to as the cut-out mode etc. entirely cut.As cutter sweep, it is not particularly limited, it is possible to use existing Known device.It is adhesively fixed additionally, due to semiconductor crystal wafer 4 is cut the one-piece type adhering film of sheet 71, therefore, it is possible to suppression Chip defect, chip splash, and also can suppress the breakage of semiconductor crystal wafer 4.
Pickup chip engages with chip 5.As the method for pickup, it is not particularly limited, can use existing known each The method of kind.Include, for example out: from cutting sheet one-piece type adhering film 71 side pin by each semiconductor chip 41 jack-up, then The chip joint method etc. of chip 5 is picked up by pick device.
As it is shown in figure 5, obtain being glued of band semiconductor chip by chip joint chip 5 is crimped on adherend 6 Thing 2.Adherend 2 with semiconductor chip includes adherend 6, be arranged on adherend 6 film like bonding agent 111 and configuration Semiconductor chip 41 on film like bonding agent 111.Adherend 6 possesses portion of terminal.As adherend 6, can list: lead-in wire Frame, intermediary layer (interposer), TAB thin film, semiconductor chip etc..In the case of adherend is lead frame, portion of terminal is permissible For inner lead.
The temperature (hereinafter referred to as " chip attachment temperature ") that chip joint chip 5 is crimped on adherend 6 is preferably 80 More than DEG C, more preferably more than 90 DEG C.Additionally, chip attachment temperature is preferably less than 150 DEG C, more preferably less than 130 DEG C.
By under elevated pressure the adherend 2 of band semiconductor chip being heated, film like bonding agent 111 is made to solidify.By This, make semiconductor chip 41 anchor on adherend 6.By making film like bonding agent 111 solidify under elevated pressure, it is possible to eliminate The space existed between film like bonding agent 111 and adherend 6, it can be ensured that film like bonding agent 111 contacts with adherend 6 Area.
As carrying out the method that heats under elevated pressure, include, for example out: to being arranged in the chamber being filled with non-active gas The adherend 2 of indoor band semiconductor chip carries out the method etc. heated.The pressure of pressured atmosphere is preferably 0.5kg/cm2(4.9 ×10-2MPa) more than, more preferably 1kg/cm2(9.8×10-2MPa) more than, more preferably 5kg/cm2(4.9×10- 1MPa) more than.If 0.5kg/cm2Above, then can easily eliminate and deposit between film like bonding agent 111 and adherend 6 Space.The pressure of pressured atmosphere is preferably 20kg/cm2(1.96MPa) below, more preferably 18kg/cm2(1.77MPa) with Under, more preferably 15kg/cm2(1.47MPa) below.If 20kg/cm2Hereinafter, then can suppress by excessive pressurization The film like bonding agent 111 caused prominent.
Heating-up temperature is preferably more than 80 DEG C, more preferably more than 120 DEG C, more preferably more than 150 DEG C, the most excellent Elect more than 170 DEG C as.If more than 80 DEG C, then the hardness that film like bonding agent 111 can be made to be appropriateness, it is possible to by pressurization Solidify and effectively make space disappear.Heating-up temperature is preferably less than 260 DEG C, more preferably less than 200 DEG C, and more preferably 180 Below DEG C.If less than 260 DEG C, then it is prevented from the decomposition of film like bonding agent 111.
It is preferably more than 0.1 hour heat time heating time, more preferably more than 0.2 hour.Be preferably heat time heating time 24 hours with Under, more preferably less than 3 hours, more preferably less than 1 hour, particularly preferably less than 30 points.
As shown in Figure 6, carry out the portion of terminal electricity of the electrode pad of semiconductor chip 41 with adherend 6 with bonding wire 7 The lead-in wire bonding process connected.As the material of bonding wire 7, copper etc. can be enumerated.
Step that lead-in wire bonding process includes engaging one end of bonding wire 7 with the electrode pad of semiconductor chip 41, The step etc. that the other end of bonding wire 7 is engaged with the portion of terminal of adherend 6.
After having carried out lead-in wire bonding process, carry out encapsulation work semiconductor chip 41 being packaged by potting resin 8 Sequence.This operation is in order to protect the semiconductor chip 41 being equipped on adherend 6, bonding wire 7 and to carry out.This operation is by using The resin forming of encapsulation is carried out by mould.As potting resin 8, such as, use the resin of epoxies.During resin-encapsulated Heating-up temperature is preferably more than 165 DEG C, more preferably more than 170 DEG C, and heating-up temperature is preferably less than 185 DEG C, and more preferably 180 Below DEG C.
Can carry out the most further heating (rear curing process).Thus, it is possible to make in encapsulation work The potting resin 8 solidifying deficiency in sequence is fully cured.Heating-up temperature can suitably set.
The semiconductor device obtained by above method include adherend 6, the adhesive linkage being arranged on adherend 6 and The semiconductor chip 41 being arranged on adhesive linkage.Adhesive linkage is solidified to form by film like bonding agent 111.Semiconductor device is also Including the potting resin 8 covering semiconductor chip 41.
As it has been described above, the manufacture method of semiconductor device includes following operation: prepare the work of diced chip bonding film 1 Sequence；Semiconductor crystal wafer 4 is crimped on the operation of the adhering film 11 of the cutting one-piece type adhering film of sheet 71；By semiconductor crystal wafer After 4 operations being crimped on adhering film 11, form the operation of chip joint chip 5 by carrying out chip separation；And will Chip joint chip 5 is crimped on the operation of adherend 6.The manufacture method of semiconductor device also includes the work comprised the steps of Sequence: after chip joint chip 5 is crimped on the operation of adherend 6, by one end of bonding wire 7 and semiconductor chip 41 Electrode pad engage step, the step that the other end of bonding wire 7 is engaged with the portion of terminal of adherend 6.Quasiconductor fills The manufacture method put also includes the operation being packaged semiconductor chip 41 with potting resin 8.
Semiconductor crystal wafer 4 is crimped on the operation of adhering film 11, and to include peeling off cutting sheet from coverlay 13 one-piece type bonding The step of thin film 71.
(variation 1)
The contact site 122A of adhesive phase 122 has the character solidified by radiation.The periphery of adhesive phase 122 122B also has the character solidified by radiation.In the manufacture method of semiconductor device, form chip joint chip 5, to adhesive phase 122 irradiation ultraviolet radiation, pickup chip engages with chip 5.Thus, due to adhesive phase 122, chip is engaged Reduce with the bonding force of chip 5, therefore, it is possible to be easily picked up chip joint chip 5.
(variation 2)
The contact site 122A of adhesive phase 122 is cured by radiation.The periphery 122B of adhesive phase 122 also leads to Overshoot line and be cured.
(variation 3)
Adhering film 11 is to include the 1st layer and the multilamellar shape of configuration on layer 1 the 2nd layer.
(variation 4)
As it is shown in fig. 7, the adhesive surface entirety of cutting sheet 12 contacts with adhering film 11.Adhesive phase 122 preferably has logical Overshoot line and the character that solidifies.In the manufacture method of semiconductor device, form chip and engage with chip 5, to adhesive phase 122 irradiation ultraviolet radiations, pickup chip engages with chip 5.Thus, owing to adhesive phase 122 is to the bonding of chip 5 of chip joint Power reduces, therefore, it is possible to be easily picked up chip joint chip 5.
(variation 5)
Substrate layer 121 is monolayer shape.
(variation 6)
The operation forming chip joint chip 5 includes by extension being arranged on the cutting one-piece type adhering film of sheet 71 Semiconductor crystal wafer 4 carry out stage of splitting.Such as, the operation forming chip joint chip 5 includes by cutting being arranged in Semiconductor crystal wafer 4 irradiating laser on the one-piece type adhering film of pitch cutting 71 and at the fragile layer that is internally formed of semiconductor crystal wafer 4 Step.Now, the operation forming chip joint chip 5 is additionally included in the step being extended after the step of formation fragile layer Suddenly.Adhering film 11 and semiconductor crystal wafer 4 are split by extension simultaneously.
(variation 7)
As shown in Figure 8, the manufacture method of semiconductor device includes following operation: be crimped on by semiconductor crystal wafer 4 bonding thin The operation of film 11；After semiconductor crystal wafer 4 is crimped on the operation of adhering film 11, form core by carrying out chip separation The chip bonding operation of chip 5；With the operation that chip joint chip 5 is crimped on adherend 61.Specifically, chip is connect Share chip 5 and being crimped on the operation of adherend 61 is that chip joint chip 5 is crimped on the semiconductor chip 641 of adherend 61 Operation.Adherend 61 includes substrate 606, semiconductor chip 641 and connects the joint of semiconductor chip 641 and substrate 606 Lead-in wire 607.More specifically, adherend 61 include substrate 606, the adhesive linkage 611 that is arranged on substrate 606, be arranged in bonding Semiconductor chip 641 on layer 611 and connect the bonding wire 607 of semiconductor chip 641 and substrate 606.Bonding wire 607 There is the part being embedded in film like bonding agent 111.
(variation 8)
As it is shown in figure 9, be that chip joint chip 5 is pressed by the operation that chip joint chip 5 is crimped on adherend 61 It is connected to the operation of the substrate 606 of adherend 61.Bonding wire 607 includes the two ends being embedded in film like bonding agent 111.
(other variation)
Variation 1～variation 8 etc. can be in any combination.
Embodiment
Use embodiment to be described in detail the present invention below, but the present invention is in the case of without departing from its main idea, and It is not limited to following example.
[1. cutting the making of the one-piece type adhering film of sheet]
Prepare cutting sheet one-piece type adhering film A～E.As shown in Figure 10, cutting sheet one-piece type adhering film A～E has Cutting sheet 9 and the adhering film 3 being arranged on cutting sheet 9.Cutting sheet 9 has base material 91 and the binding agent being arranged on base material 91 Layer 92.Base material 91 has the 1st base material 911 and the 2nd base material 912 being arranged on the 1st base material 911.2nd base material 912 has the 2nd 912b.Adhering film A has the 2nd interarea 3b.
(1) making of adhering film
The composition used to make adhering film is illustrated.
Acrylic resin: the Teisan Resin WS023-EK30 that Nagase ChemteX Corporation manufactures (have hydroxyl and the acrylate copolymer of carboxyl, Mw:50 ten thousand, glass transition temperature :-10 DEG C)
Epoxy resin 1: jER1001 (solid epoxy resin, the epoxide equivalent 450g/eq. that Mitsubishi chemical Co., Ltd manufactures ～500g/eq.)
Epoxy resin 2: the jER828 (liquid-state epoxy resin, epoxide equivalent 180g/eq.) that Mitsubishi chemical Co., Ltd manufactures
Phenolic resin 1: MEH-7851 (phenolic resin, the hydroxyl equivalent 201～220g/ that bright and chemical conversion Co., Ltd. manufactures eq.)
Spherical silicon dioxide: SO-25R (the spherical titanium dioxide of mean diameter 0.5 μm that Admatechs Co., Ltd. manufacture Silicon)
Electroconductive polymer: the WED-S that Soken Chemical & Engineering Co., Ltd. manufactures
The compounding recorded according to table 1 is dissolved in butanone than by each composition, prepares the viscous of solid component concentration 20 weight % Connect agent composition solution.Barrier film (having carried out the PET film that silicone release processes) upper coating adhesive group in thickness 50 μm Polymer solution, with the oven drying 2 minutes of 130 DEG C, prepares adhering film A～C of thickness 20 μm.
[table 1]
(adhering film)
(2) making of adhesive phase
Then, in the reaction vessel possessing condensing tube, nitrogen ingress pipe, thermometer and agitating device put into acrylic acid- 2-Octyl Nitrite (hereinafter referred to as " 2EHA ") 100 parts, 2-Hydroxy ethyl acrylate (hereinafter referred to as " HEA ") 10 parts, benzoyl peroxide Formyl 0.3 part and toluene 80 parts, carry out polymerization in 8 hours with 60 DEG C in stream of nitrogen gas and process, obtain acrylic polymer A. 2-methacryloxyethyl isocyanates (hereinafter referred to as " MOI ") 5 parts is added, at sky in this acrylic polymer A Entraining air stream processes with 50 DEG C of additive reaction carried out 50 hours, obtains acrylic polymer A '.
Then, relative to acrylic polymer A ' 100 parts, polyisocyanate compound (trade name " CORONATE is added L ", Japanese polyurethane Co., Ltd. manufactures) 5 parts and Photoepolymerizationinitiater initiater (trade name " IRGACURE 184 ", Ciba Specialty Chemicals Inc. manufactures) 5 parts, prepare binder solution.Binder solution is coated PET release liner Implement organosilicon process face on, heat drying 2 minutes at 120 DEG C, formed thickness 30 μm adhesive phase.
(3) making of the cutting sheet one-piece type adhering film A in embodiment 1
1st base material 911 is the base material of the polypropylene of thickness 50 μm.2nd base material 912 is relative to polyethylene 100 weight The base material of the WED-S that part manufactures containing 20 weight portion Soken Chemical & Engineering Co., Ltd..The thickness of the 2nd base material 912 is 30 μm.
Adhesive phase and the 1st base material 911 are fitted, preserves 72 hours at 23 DEG C.(day is eastern to use ultraviolet lamp The UM-810 that Jing Ji Co., Ltd. manufactures), across base material 91, " region carrying semiconductor crystal wafer in adhesive phase " is irradiated 500mJ/cm2Ultraviolet, be consequently formed cutting sheet 9.
By using hand pressure roller to be fitted with cutting sheet 9 by adhering film A, prepare cutting sheet one-piece type adhering film A.
(4) making of the cutting sheet one-piece type adhering film B in embodiment 2
1st base material 911 is the base material of the polypropylene of thickness 80 μm.2nd base material 912 is relative to ethane-acetic acid ethyenyl Ester copolymer 100 weight portion contains the base of the PA-200 (electroconductive polymer) that 20 weight portion T. & K. Inc. TOKA manufacture Material.The thickness of the 2nd base material 912 is 10 μm.
Adhesive phase and the 1st base material 911 are fitted, preserves 72 hours at 23 DEG C.(day is eastern to use ultraviolet lamp The UM-810 that Jing Ji Co., Ltd. manufactures), across base material 91, " region carrying semiconductor crystal wafer in adhesive phase " is irradiated 500mJ/cm2Ultraviolet, be consequently formed cutting sheet 9.
By using hand pressure roller to be fitted with cutting sheet 9 by adhering film B, prepare cutting sheet one-piece type adhering film B.
(5) making of the cutting sheet one-piece type adhering film C in embodiment 3
1st base material 911 is the base material of the vinyl-vinyl acetate copolymer of thickness 50 μm.2nd base material 912 is relative The base material of the PA-200 that 30 weight portion T. & K. Inc. TOKA manufacture is contained in polyethylene 100 weight portion.2nd base material 912 Thickness is 30 μm.
Adhesive phase and the 1st base material 911 are fitted, preserves 72 hours at 23 DEG C.(day is eastern to use ultraviolet lamp The UM-810 that Jing Ji Co., Ltd. manufactures), across base material 91, " region carrying semiconductor crystal wafer in adhesive phase " is irradiated 500mJ/cm2Ultraviolet, be consequently formed cutting sheet 9.
By using hand pressure roller to be fitted with cutting sheet 9 by adhering film A, prepare cutting sheet one-piece type adhering film C.
(6) making of the cutting sheet one-piece type adhering film D in comparative example 1
1st base material 911 is the base material of the polypropylene of thickness 50 μm.2nd base material 912 is the polyethylene of thickness 30 μm Base material.
Adhesive phase and the 1st base material 911 are fitted, preserves 72 hours at 23 DEG C.(day is eastern to use ultraviolet lamp The UM-810 that Jing Ji Co., Ltd. manufactures), across base material 91, " region carrying semiconductor crystal wafer in adhesive phase " is irradiated 500mJ/cm2Ultraviolet, be consequently formed cutting sheet 9.
By using hand pressure roller to be fitted with cutting sheet 9 by adhering film C, prepare cutting sheet one-piece type adhering film D.
(7) making of the cutting sheet one-piece type adhering film E in comparative example 2
1st base material 911 is for containing what 20 weight portion Soken Chemical & Engineering Co., Ltd. manufactured relative to polyethylene 100 weight portion The base material of WED-S.The thickness of the 1st base material 911 is 50 μm.2nd base material 912 is the base material of the polypropylene of thickness 30 μm.
Adhesive phase and the 1st base material 911 are fitted, preserves 72 hours at 23 DEG C.(day is eastern to use ultraviolet lamp The UM-810 that Jing Ji Co., Ltd. manufactures), across base material 91, " region carrying semiconductor crystal wafer in adhesive phase " is irradiated 500mJ/cm2Ultraviolet, be consequently formed cutting sheet 9.
By using hand pressure roller to be fitted with cutting sheet 9 by adhering film A, prepare cutting sheet one-piece type adhering film E.
[2. evaluating]
Cutting sheet one-piece type adhering film A～E is carried out following evaluation.Result is shown in table 2.
The sheet resistance value of (1) the 2nd 912b
Use the ultra-high resistance measurement sample case of the high megohmmeter TR-8601 of Advantest Corporation manufacture TR-42.23 ± 2 DEG C, will cut under 50 ± 5% atmosphere after the one-piece type adhering film of sheet stands 2 hours, in the present context to the 2 912b give to apply voltage 500V, read from applying the numerical value after starting 1 minute.According to applying voltage divided by surface electricity The numerical value flowed and obtain obtains sheet resistance value.
(2) elongation at break
The sample of the strip of initial length 120mm, width 10mm is cut out, with chuck spacing 50mm, stretching from cutting sheet 9 Speed 300mm/min carries out tension test, thus measures the variable quantity (mm) of the percentage elongation of sample.As extensiometer, make The Autograph AG-IS manufactured with Shimadzu Scisakusho Ltd, as load sensor, uses Shimano Inc to make Manufactured PFG-50NA.
(3) coverlay disbonded test
Coverlay is pasted 200 cutting one-piece type adhering films of sheet, is rolled into a roll, uses wafer erecting device MA- 3000III (Dong Jing machine Co., Ltd. manufacture) carries out wafer laminating test.Peel off from 10 cutting one-piece type adhering films of sheet Coverlay, is judged to zero by the situation all successfully peeling off coverlay in 10 cutting one-piece type adhering films of sheet, will have 1 More than fail peel off situation be judged to ×.
(4) situation of dispersing after cutting
On the cutting one-piece type adhering film of sheet, by wafer erecting device (MA-3000III, Dong Jing machine Co., Ltd. system Make) fit 12 inches, the minute surface wafer of 500 μ m-thick with the speed of 10mm/sec at 60 DEG C.Then, cutter sweep is used (DFD6361, DISCO Corporation manufacture) cut into 10mm × 10mm chip size (singly cut, blade height 90 μm, Speed 50mm/sec).On chip, whether it is attached with conductive component with sem analysis.Conductive component is not attached to chip On situation be judged to zero, situation about being attached on chip by conductive component is judged to ×.
The sheet resistance value of (5) the 2nd interarea 3b
Use the ultra-high resistance measurement sample case of the high megohmmeter TR-8601 of Advantest Corporation manufacture TR-42.23 ± 2 DEG C, will cut under 50 ± 5% atmosphere after the one-piece type adhering film of sheet stands 2 hours, in the present context to the 2 interarea 3b give to apply voltage 500V, read from applying the numerical value after starting 1 minute.According to applying voltage divided by surface electricity The numerical value that stream obtains obtains sheet resistance value.
(6) adhesion strength
By the probe of diameter 5.0mm with 25 DEG C, pressurized conditions 100gf, 1 second pressing time press on adhering film, measure Pop one's head in test speed 120mm/min load when adhering film leaves.
[table 2]

Claims (10)

1. a diced chip bonding film, it is formed as web-like, and it comprises:
Coverlay, and
The one-piece type adhering film of cutting sheet being arranged on described coverlay,
The described one-piece type adhering film of cutting sheet comprises:
Cutting sheet, described cutting sheet comprise with the 1st and with described 1st face the 2nd substrate layer defining two sides in opposite directions and With described 1st adhesive phase contacted；And
Adhering film, described adhering film with the 1st interarea contacted with described adhesive phase and with described 1st interarea in opposite directions 2 interareas define two sides,
The sheet resistance value of described 2nd is 1.0 × 1011Ω/below sq., the sheet resistance value of described 2nd interarea is 1.0 × 1012Ω/more than sq..
Diced chip bonding film the most according to claim 1, wherein, described substrate layer comprises and has described 1st 1st substrate layer and there is the 2nd substrate layer of described 2nd,
Described 2nd substrate layer comprises conductive component.
Diced chip bonding film the most according to claim 2, wherein, the thickness of described 2nd substrate layer is 1 μm～30 μ m。
Diced chip bonding film the most according to claim 2, wherein, described conductive component is that organic system electric conductivity becomes Point.
Diced chip bonding film the most according to claim 2, wherein, described 2nd substrate layer also comprises choosing freely poly-second The resin of more than a kind in the group of alkene, polypropylene, vinyl-vinyl acetate copolymer composition.
Diced chip bonding film the most according to claim 1, wherein, the elongation at break of described cutting sheet is 500% Above.
Diced chip bonding film the most according to claim 1, wherein, described adhering film comprises: epoxy resin or phenol Urea formaldehyde；And acrylic resin,
Described adhering film is more than 0.2N and below 3.0N the adhesion strength of 25 DEG C.
Diced chip bonding film the most according to claim 1, wherein, described coverlay is polyethylene terephthalate Ester film,
The thickness of described coverlay is 20 μm～75 μm.
9. a manufacture method for semiconductor device, it includes following operation:
The operation of preparation diced chip bonding film according to any one of claim 1～8；
Semiconductor crystal wafer is crimped on the operation of the described adhering film of the described one-piece type adhering film of cutting sheet；
After described semiconductor crystal wafer is crimped on the operation of described adhering film, is formed comprise by carrying out chip separation Semiconductor chip and the operation of the chip joint chip of film like bonding agent being arranged on described semiconductor chip；With
Described chip joint chip is crimped on the operation of adherend,
The operation that described semiconductor crystal wafer is crimped on described adhering film includes peeling off described cutting sheet one from described coverlay The step of build adhering film.
10. a semiconductor device, it is to be obtained by the manufacture method described in claim 9.
CN201610366194.6A 2015-05-27 2016-05-27 Diced chip bonding film, the manufacture method of semiconductor device and semiconductor device Pending CN106189897A (en)

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