JP2015005636A - Dicing/die-bonding film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a dicing/die-bonding film capable of suppressing deterioration in sharpness of a dicing blade and also capable of suppressing the occurrence of whiskers.SOLUTION: The abrasion loss of a second dicing blade is 20-200 μm when a first dicing blade cut a wafer 4 having a thickness of 100 μm by 100 m at a cut depth of 50 μm while the wafer is bonded to an adhesive layer 3 and then the second dicing blade cut the wafer and the adhesive layer by 100 m at a cut depth at least reaching a pressure sensitive adhesive layer 2 along the cut of the first dicing blade. The width of the second dicing blade is smaller than that of the first dicing blade. A cut forming condition by the first dicing blade is a speed of 50 mm/sec and a number of revolution of 40,000 rpm, and a cutting condition by the second dicing blade is a speed of 50 mm/sec and a number of revolution of 45,000 rpm.

Description

The present invention relates to a dicing die bonding film.

In the step of dicing the semiconductor wafer, dicing may be performed with the semiconductor wafer attached to a dicing film. A dicing film having a structure in which an adhesive layer is laminated on a substrate is known (see, for example, Patent Document 1).

However, when a semiconductor wafer is diced using a dicing film, a whisker-like foreign matter (polishing waste derived from the base material) may remain on the dicing line.

JP 2011-198976 A

Patent Document 1 discloses a dicing film using a specific resin as a constituent component of a base material in order to reduce the occurrence of beard. However, if a large amount of dicing is performed while the conventional dicing film described in Patent Document 1 is bonded to a semiconductor wafer, polishing scraps adhere to the dicing blade, clogging occurs, and the sharpness of the dicing blade decreases. End up. The reduction in the sharpness of the dicing blade makes it easy to generate beard.

This invention solves the said subject, and it aims at providing the dicing die-bonding film which can suppress the fall of the sharpness of a dicing blade, and can suppress generation | occurrence | production of a beard.

The present invention is a dicing die bonding film in which a base material, a pressure-sensitive adhesive layer, and an adhesive layer are laminated in this order, and a first bare silicon wafer having a thickness of 100 μm is bonded to the adhesive layer. After the dicing blade cuts the silicon bare wafer 100 m with a cutting depth of 50 μm, the silicon bare bears with a cutting depth at which the second dicing blade reaches at least the adhesive layer along the cutting of the first dicing blade. The wear amount of the second dicing blade when the wafer and the adhesive layer are cut 100 m is 20 to 200 μm, and the blade width of the second dicing blade is smaller than the blade width of the first dicing blade. The cutting formation condition by the first dicing blade is a speed of 50 mm. sec, the rotation speed 40000 rpm, cutting conditions according to the second dicing blade, speed of 50 mm / sec, about dicing die bonding film that is equivalent to the rotation speed 45000 rpm.

Since the amount of wear is 20 μm or more, it is possible to suppress a reduction in the sharpness of the dicing blade and to suppress the generation of beard. On the other hand, since the wear amount is 200 μm or less, it is possible to prevent the life of the dicing blade from becoming excessively short.

In the present invention, the amount of wear of the second dicing blade when the silicon bare wafer is step-cut using two types of dicing blades is specified, but the dicing die bonding film of the present invention is a single cut or the like. Even when other dicing methods are employed, the above-described effects can be obtained.

The thickness of the adhesive layer / the total thickness of the base material and the pressure-sensitive adhesive layer is preferably 0.045 to 0.9. Since it is 0.045 or more, the grinding | polishing (dressing) effect of a dicing blade is acquired and the fall of the sharpness of a dicing blade can be suppressed. Since it is 0.9 or less, it is possible to prevent the life of the dicing blade from becoming excessively short.

It is preferable that the adhesive layer contains a spherical alumina filler as an abrasive, and the content of the spherical alumina filler in the adhesive layer is 60 to 88% by weight. The dicing blade can be satisfactorily polished by including alumina having a hardness next to diamond in the adhesive layer. Moreover, the favorable grinding | polishing effect is acquired by making the shape of an alumina the spherical shape which can be filled highly. Furthermore, by setting the content of the spherical alumina filler within the above range, the dicing blade can be polished well, and the sharpness can be prevented from being lowered.

ADVANTAGE OF THE INVENTION According to this invention, while being able to suppress the sharpness fall of a dicing blade, generation | occurrence | production of a beard can be suppressed.

It is a cross-sectional schematic diagram of the dicing die-bonding film of Embodiment 1. It is a cross-sectional schematic diagram of the modification of the dicing die-bonding film of Embodiment 1. It is a figure which shows typically a part of manufacturing process of a semiconductor device. (A) is a figure which shows typically a mode that a 1st dicing blade cuts a silicon | silicone bare wafer. (B) is a figure which shows typically a part of cross section of the silicon | silicone bare wafer by which the notch was formed with the 1st dicing blade. (A) is a figure which shows typically a mode that a 2nd dicing blade cut | disconnects a silicon | silicone bare wafer and an adhesive bond layer. (B) is a figure which shows typically a part of cross section of the silicon | silicone bare wafer cut | disconnected by the 2nd dicing blade.

The present invention will be described in detail below with reference to embodiments, but the present invention is not limited only to these embodiments.

[Embodiment 1]
FIG. 1 is a schematic cross-sectional view of the dicing die bonding film of Embodiment 1. FIG. 2 is a schematic cross-sectional view of a modified example of the dicing die-bonding film of the first embodiment.

As shown in FIG. 1, the dicing die bonding film 10 has a configuration in which an adhesive layer 3 is laminated on a dicing film 11. The dicing film 11 is configured by laminating the pressure-sensitive adhesive layer 2 on the substrate 1, and the adhesive layer 3 is provided on the pressure-sensitive adhesive layer 2. Further, as shown in FIG. 2, the dicing die bonding film 10 may have a configuration in which the adhesive layer 3 is formed only on a work (semiconductor wafer 4 or the like) affixed portion.

After the silicon bare wafer having a thickness of 100 μm is bonded to the adhesive layer 3 of the dicing die bonding film 10, the first dicing blade cuts the silicon bare wafer by 100 m with a cutting depth of 50 μm, and then the first dicing. When the silicon bare wafer and the adhesive layer 3 are cut 100 m at a cutting depth at which the second dicing blade reaches at least the adhesive layer 2 along the cutting of the blade, the wear amount of the second dicing blade is 20 μm or more. is there. Since it is 20 micrometers or more, the fall of the sharpness of a dicing blade can be suppressed and generation | occurrence | production of a beard can be suppressed. A larger amount of wear is more preferable from the viewpoint of suppressing a reduction in sharpness of the dicing blade. For this reason, the amount of wear is preferably 30 μm or more, more preferably 50 μm or more.

On the other hand, from the viewpoint of the life of the dicing blade, the smaller the wear amount, the better. Specifically, the wear amount is 200 μm or less, preferably 150 μm or less, more preferably 120 μm or less.

A silicon bare wafer is a silicon wafer in a state before processing such as pattern formation. As the first dicing blade and the second dicing blade, those in which diamond particles are embedded in a resin can be suitably used.

The blade width of the second dicing blade is smaller than the blade width of the first dicing blade. The incision formation by the first dicing blade is performed under the conditions of a feed rate of 50 mm / sec and a rotational speed of 40000 rpm. Cutting with the second dicing blade is performed under conditions of a feed rate of 50 mm / sec and a rotation speed of 45000 rpm.

The amount of wear can be measured by the method described in the examples.

(Adhesive layer 3)
Examples of the adhesive layer 3 include those formed of a thermoplastic resin and a thermosetting resin. More specifically, examples of the adhesive layer 3 include those formed of an epoxy resin, a phenol resin, and an acrylic resin. .

The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type. Biphenyl type, naphthalene type, fluorene type, phenol novolac type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., bifunctional epoxy resin or polyfunctional epoxy resin, or hydantoin type, trisglycidyl isocyanurate Type or glycidylamine type epoxy resin is used. These can be used alone or in combination of two or more. Among these epoxy resins, in the present invention, an epoxy resin having an aromatic ring such as a benzene ring, a biphenyl ring, and a naphthalene ring is particularly preferable. Specifically, for example, novolak type epoxy resin, xylylene skeleton-containing phenol novolak type epoxy resin, biphenyl skeleton containing novolak type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, tetramethylbiphenol type epoxy resin, triphenyl Examples include methane type epoxy resins. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like. The epoxy resin contains little ionic impurities that corrode semiconductor elements.

The weight average molecular weight of the epoxy resin is preferably in the range of 300-1500, and more preferably in the range of 350-1000. When the weight average molecular weight is less than 300, the mechanical strength, heat resistance, and moisture resistance of the die-bonding film 3 after thermosetting may be lowered. On the other hand, if it is larger than 1500, the die-bonded film after thermosetting may become rigid and brittle. In addition, the weight average molecular weight in this invention means the polystyrene conversion value using the calibration curve by a standard polystyrene by the gel permeation chromatography method (GPC).

Furthermore, the phenol resin acts as a curing agent for the epoxy resin. For example, a novolak such as a phenol novolak resin, a phenol biphenyl resin, a phenol aralkyl resin, a cresol novolak resin, a tert-butylphenol novolak resin, or a nonylphenol novolak resin. And polyoxystyrene such as polyphenol styrene, resol type phenol resin, and polyparaoxystyrene. These can be used alone or in combination of two or more. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are preferred. This is because the connection reliability of the semiconductor device can be improved.

The weight average molecular weight of the phenol resin is preferably in the range of 300 to 1500, and more preferably in the range of 350 to 1000. When the weight average molecular weight is less than 300, the epoxy resin is not sufficiently cured by heat and sufficient toughness may not be obtained. On the other hand, when the weight average molecular weight is larger than 1500, the viscosity becomes high, and workability at the time of producing the die bond film may be lowered.

The blending ratio of the epoxy resin and the phenol resin is preferably blended so that the hydroxyl group in the phenol resin is 0.5 equivalent to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. . More preferred is 0.8 equivalent to 1.2 equivalent. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

The total content of the epoxy resin and the phenol resin in the adhesive layer 3 is preferably 5% by weight or more, more preferably 9% by weight or more. When it is 5% by weight or more, reflow resistance reliability can be obtained by a crosslinking reaction between an epoxy resin and a phenol resin. The total content of the epoxy resin and the phenol resin in the adhesive layer 3 is preferably 40% by weight or less, more preferably 30% by weight or less. When the content is 40% by weight or less, the weakening of the adhesive layer 3 can be suppressed. Epoxy resins and phenolic resins are generally low molecular weight components and have low flexibility at room temperature. Therefore, if the total content is too large, the adhesive layer 3 tends to break easily.

Although it does not specifically limit as said acrylic resin, In this invention, a carboxyl group-containing acrylic copolymer and an epoxy group-containing acrylic copolymer are preferable. Examples of the functional group monomer used in the carboxyl group-containing acrylic copolymer include acrylic acid and methacrylic acid. The content of acrylic acid or methacrylic acid is adjusted so that the acid value is in the range of 1-4. As the balance, a mixture of alkyl acrylate having 1 to 8 carbon atoms such as methyl acrylate and methyl methacrylate, alkyl methacrylate, styrene, or acrylonitrile can be used. Among these, ethyl (meth) acrylate and / or butyl (meth) acrylate are particularly preferable. The mixing ratio is preferably adjusted in consideration of the glass transition point (Tg) of the acrylic resin described later. Moreover, it does not specifically limit as a polymerization method, For example, conventionally well-known methods, such as a solution polymerization method, a cage-like polymerization method, a suspension polymerization method, and an emulsion polymerization method, are employable.

Moreover, it does not specifically limit as another monomer component copolymerizable with the said monomer component, For example, an acrylonitrile etc. are mentioned. The amount of these copolymerizable monomer components used is preferably in the range of 1 to 20% by weight with respect to the total monomer components. By incorporating other monomer components within the numerical range, modification of cohesive force, adhesiveness, etc. can be achieved.

The content of the acrylic resin in the adhesive layer 3 is preferably 2% by weight or more, more preferably 5% by weight or more. When it is 2% by weight or more, it is easy to maintain the shape as a film. The content of the acrylic resin is preferably 15% by weight or less, more preferably 10% by weight or less. When the content is 15% by weight or less, good unevenness followability at a high temperature can be obtained.

The adhesive layer 3 usually contains an abrasive. By containing an abrasive in the adhesive layer 3, the surface of the dicing blade can be polished (dressed), and a reduction in the sharpness of the dicing blade can be prevented.

As the abrasive, a spherical alumina filler is preferable. Since alumina has hardness next to diamond, the dicing blade can be satisfactorily polished by containing alumina in the adhesive layer 3. Moreover, although the polishing effect is small when the amount of alumina is low, a good polishing effect can be obtained by making the shape of alumina spherical enough to be filled.

The average particle size of the spherical alumina filler is preferably 0.3 μm or more, more preferably 0.5 μm or more. Since it is 0.3 micrometer or more, the uneven | corrugated followable | trackability at high temperature is acquired and high filling is attained. The average particle size of the spherical alumina filler is preferably 15 μm or less, more preferably 10 μm or less. Since the thickness is 15 μm or less, the adhesive layer 3 can be thinned.
The average particle diameter of the spherical alumina filler is, for example, a value obtained by a photometric particle size distribution meter (manufactured by HORIBA, apparatus name: LA-910).

The maximum particle size of the spherical alumina filler is preferably 40 μm or less. When it is 40 μm or less, it is possible to cope with thinning. The thickness requirement of the adhesive layer 3 is becoming thinner year by year, and those having a thickness of 40 μm or less are the mainstream, and fillers having a larger particle size than that are not suitable.

The spherical alumina filler is preferably treated with a silane coupling agent (pretreatment). Thereby, the dispersibility of a spherical alumina filler becomes favorable and the high filling of a spherical alumina filler is attained.

A silane coupling agent is a compound having a hydrolyzable group and an organic functional group in the molecule.

As a hydrolysable group, C1-C6 alkoxy groups, such as a methoxy group and an ethoxy group, an acetoxy group, 2-methoxyethoxy group etc. are mentioned, for example. Of these, a methoxy group is preferred because of its high hydrolysis rate and good silane coupling treatment.

Examples of the organic functional group include a vinyl group, an epoxy group, a styryl group, a methacryl group, an acrylic group, an amino group, a ureido group, a mercapto group, a sulfide group, and an isocyanate group. Among these, an epoxy group and a methacryl group are preferable because the dispersibility of the spherical alumina filler can be enhanced and the fluidity of the adhesive layer 3 can be enhanced.

Examples of the silane coupling agent include vinyl group-containing silane coupling agents such as vinyltrimethoxysilane and vinyltriethoxysilane; 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropylmethyl Epoxy group-containing silane coupling agents such as dimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, and 3-glycidoxypropyltriethoxysilane (epoxysilane silane coupling agents) ); Styryl group-containing silane coupling agent such as p-styryltrimethoxysilane; 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxy Methacrylic group-containing silane coupling agents such as lan, 3-methacryloxypropyltriethoxysilane (methacrylic silane-based silane coupling agents); acrylic group-containing silane coupling agents such as 3-acryloxypropyltrimethoxysilane; N-2 -(Aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-tri Ethoxysilyl-N- (1,3-dimethyl-butylidene) propylamine, N-phenyl-3-aminopropyltrimethoxysilane, N- (vinylbenzyl) -2-aminoethyl-3-aminopropyltrimethoxysilane, etc. Amino group-containing silane cup Ureido group-containing silane coupling agents such as 3-ureidopropyltriethoxysilane; mercapto group-containing silane coupling agents such as 3-mercaptopropylmethyldimethoxysilane and 3-mercaptopropyltrimethoxysilane; bis (triethoxysilyl) Propyl) tetrasulfide and other sulfide group-containing silane coupling agents; 3-isocyanatepropyltriethoxysilane and other isocyanate group-containing silane coupling agents.

The method for treating the spherical alumina filler with the silane coupling agent is not particularly limited, and is a wet method in which the spherical alumina filler and the silane coupling agent are mixed in a solvent, and the spherical alumina filler and the silane coupling agent are treated in a gas phase. And dry method.

The treatment amount of the silane coupling agent is not particularly limited, but it is preferable to treat 0.05 to 5 parts by weight of the silane coupling agent with respect to 100 parts by weight of the spherical alumina filler.

The content of the spherical alumina filler in the adhesive layer 3 is preferably 60% by weight or more, more preferably 70% by weight or more, and further preferably 75% by weight or more. If it is 60% by weight or more, the dicing blade can be satisfactorily polished and the sharpness can be prevented from being lowered. The content of the spherical alumina filler in the adhesive layer 3 is preferably 90% by weight or less, more preferably 88% by weight or less. When it is 90% by weight or less, it is possible to prevent the life of the dicing blade from becoming excessively short.

In addition to the above components, the adhesive layer 3 may appropriately contain a compounding agent generally used in the production of the adhesive layer, for example, a crosslinking agent.

Although the manufacturing method of the adhesive bond layer 3 is not specifically limited, The process of producing the adhesive composition solution containing each said component (For example, a thermoplastic resin, a thermosetting resin, and a spherical alumina filler), adhesive composition solution A method including a step of obtaining a filtrate by filtration and a step of drying the coating film after coating the filtrate on a substrate separator to form a coating film is preferable.

Although it does not specifically limit as a solvent used for adhesive composition solution, The organic solvent which can melt | dissolve, knead | mix or disperse | distribute each said component uniformly is preferable. Examples thereof include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone, toluene, xylene, and the like.

The opening of the filter medium used for filtration is preferably 50 μm or less. Thereby, the maximum particle diameter of the spherical alumina filler can be set to 50 μm or less, and the aggregate of the alumina filler can be prevented from being mixed into the adhesive layer 3.

As the base material separator, polyethylene terephthalate (PET), polyethylene, polypropylene, a plastic film or paper whose surface is coated with a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate release agent can be used. Examples of the method for applying the adhesive composition solution include roll coating, screen coating, and gravure coating. Moreover, the drying conditions of a coating film are not specifically limited, For example, it can carry out in drying temperature 70-160 degreeC and drying time 1-5 minutes.

Although the thickness of the adhesive bond layer 3 is not specifically limited, 5 micrometers or more are preferable. When it is 5 μm or more, it is possible to suppress a reduction in the sharpness of the dicing blade. Moreover, the thickness of the adhesive layer 3 is preferably 100 μm or less, and more preferably 50 μm or less. It can prevent that the lifetime of a dicing blade becomes too short as it is 100 micrometers or less.

(Substrate 1)
The base material 1 is a strength base of the dicing die bonding film 10. Examples of the substrate 1 include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, and the like. Polyolefin, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene -Hexene copolymers, polyesters such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide Polyphenyl sulphates id, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), and paper. Among these, polyethylene, polypropylene, and the like are preferable as the substrate 1 because of their low water absorption.

The surface of the substrate 1 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to enhance adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed.

As the substrate 1, the same kind or different kinds can be appropriately selected and used, and if necessary, a blend of several kinds can be used.

The thickness of the substrate 1 is not particularly limited and can be appropriately determined, but is generally about 60 to 150 μm.

(Adhesive layer 2)
As the pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer 2, an acrylic polymer is used as a base polymer from the viewpoint of cleanability with an organic solvent such as ultrapure water or alcohol of an electronic component that is difficult to contaminate a semiconductor wafer or glass. Acrylic adhesive is preferred.

Examples of the acrylic polymer include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon linear or branched alkyl esters, etc.) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, acrylic polymers such as one or more was used as a monomer component of the cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

The acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. You may go out. Examples of such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Styrene Contains sulfonic acid groups such as phonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

Furthermore, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

The acrylic polymer can be prepared, for example, by applying an appropriate method such as a solution polymerization method, an emulsion polymerization method, a bulk polymerization method, or a suspension polymerization method to a mixture of one or more component monomers. . The pressure-sensitive adhesive layer 2 preferably has a composition that suppresses the inclusion of a low-molecular-weight substance from the viewpoint of preventing contamination of the wafer. From this point, the main component is an acrylic polymer having a weight average molecular weight of 300,000 or more, particularly 400,000 to 3,000,000. Therefore, the pressure-sensitive adhesive can be of an appropriate crosslinking type by an internal crosslinking method, an external crosslinking method, or the like.

For controlling the crosslinking density of the pressure-sensitive adhesive layer 2, for example, a polyfunctional isocyanate compound, a polyfunctional epoxy compound, a melamine compound, a metal salt compound, a metal chelate compound, an amino resin compound, or a peroxide is used. Appropriate methods such as a method of crosslinking using an appropriate external crosslinking agent such as a method, and a method of mixing a low molecular compound having two or more carbon-carbon double bonds and crosslinking by irradiation with energy rays, etc. Can be adopted. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive. Generally, it is preferable to add about 5 parts by weight or less, and further 0.1 parts by weight to 5 parts by weight with respect to 100 parts by weight of the base polymer. In addition, you may use additives, such as various tackifiers and an anti-aging agent, for an adhesive as needed.

As the pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer 2, a radiation curable pressure-sensitive adhesive is suitable. Examples of the radiation-curable pressure-sensitive adhesive include additive-type radiation-curable pressure-sensitive adhesives in which a radiation-curable monomer component or a radiation-curable oligomer component is blended with the above-mentioned pressure-sensitive adhesive.

Examples of the radiation curable monomer component to be blended include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra ( Examples thereof include (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. These monomer components can be used alone or in combination of two or more.

Examples of the radiation curable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a molecular weight in the range of about 100 to 30,000 are suitable. The compounding amount of the radiation-curable monomer component or oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the adhesive strength of the pressure-sensitive adhesive layer. Generally, it is, for example, about 5 to 500 parts by weight, preferably about 70 to 150 parts by weight with respect to 100 parts by weight of a base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

As the radiation curable pressure-sensitive adhesive, in addition to the additive-type radiation curable pressure-sensitive adhesive, a base polymer having a carbon-carbon double bond in the polymer side chain or main chain or at the main chain terminal was used. An internal radiation-curable pressure-sensitive adhesive is also included. Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain much, so they are stable without the oligomer components moving through the adhesive over time. This is preferable because an adhesive layer having a layered structure can be formed.

As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, those having an acrylic polymer as a basic skeleton are preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

The method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted, but it is easy to introduce the carbon-carbon double bond into the polymer side chain in terms of molecular design. It is. For example, after a monomer having a functional group is previously copolymerized with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.

Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. Moreover, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the preferable combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

As the intrinsic radiation curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer does not deteriorate the characteristics. Photopolymerizable compounds such as components and oligomer components can also be blended. The compounding amount of the photopolymerizable compound is usually in the range of 30 parts by weight or less, preferably in the range of 0 to 10 parts by weight, with respect to 100 parts by weight of the base polymer.

The radiation curable pressure-sensitive adhesive preferably contains a photopolymerization initiator when cured by ultraviolet rays or the like.

As an adhesive which comprises the adhesive layer 2, the active energy ray hardening-type adhesive as described in Unexamined-Japanese-Patent No. 2010-129701 can be used especially suitably. The active energy ray-curable pressure-sensitive adhesive contains the following acrylic polymer A.

Acrylic polymer A: CH ₂ = CHCOOR (wherein, R is an alkyl group having 6 to 10 carbon atoms) and acrylic ester 50% by weight or more expressed by a hydroxyl group-containing monomer 10 wt% to 30 wt %, And an isocyanate compound having a radical-reactive carbon-carbon double bond is added to a polymer having a monomer composition containing no carboxyl group-containing monomer at 50 mol% to 95 mol% with respect to the hydroxyl group-containing monomer. Acrylic polymer having

In the acrylic polymer A, an acrylic acid alkyl ester represented by CH ₂ ═CHCOOR (wherein R is an alkyl group having 6 to 10 carbon atoms) may be referred to as “acrylic acid C 6-10 alkyl ester”. ) Is used. When the number of carbon atoms in the alkyl group of the acrylic acid alkyl ester is less than 6, the peel strength may be too great, and the pickup property may be reduced. On the other hand, when the number of carbon atoms of the alkyl group of the acrylic acid alkyl ester exceeds 10, the adhesiveness or adhesiveness with the adhesive layer 3 is lowered, and as a result, chip fly may occur during dicing. As the C6-10 alkyl acrylate, an alkyl acrylate having 8 to 9 carbon atoms in the alkyl group is particularly preferable, and 2-ethylhexyl acrylate and isooctyl acrylate are most preferable.

The content of the acrylic acid C6-10 alkyl ester is preferably 50 wt% (wt%) or more, more preferably 70 wt% to 90 wt%, based on the total amount of the monomer components. When the content of the acrylic acid C6-10 alkyl ester is less than 50 wt% with respect to the total amount of the monomer components, the peeling force may be excessively increased, and the pickup property may be deteriorated.

The content of the hydroxyl group-containing monomer is preferably in the range of 10 wt% to 30 wt%, more preferably in the range of 15 wt% to 25 wt% with respect to the total amount of the monomer components. If the content of the hydroxyl group-containing monomer is less than 10 wt% with respect to the total amount of the monomer components, crosslinking after irradiation with active energy rays is insufficient, resulting in poor pick-up performance and adhesive residue on the semiconductor chip with the adhesive layer 3 May occur. On the other hand, when the content of the hydroxyl group-containing monomer exceeds 30 wt% with respect to the total amount of the monomer components, the polarity of the pressure-sensitive adhesive increases, and the interaction with the adhesive layer 3 increases, so that the pick-up property decreases.

The acrylic polymer A may contain units corresponding to other monomer components as necessary.

In the acrylic polymer A, an isocyanate compound having a radical reactive carbon-carbon double bond (sometimes referred to as “double bond-containing isocyanate compound”) is used. That is, it is preferable that the acrylic polymer has a configuration in which a double bond-containing isocyanate compound is subjected to an addition reaction with a polymer based on a monomer composition such as an acrylic ester or a hydroxyl group-containing monomer. Therefore, the acrylic polymer preferably has a radical reactive carbon-carbon double bond in its molecular structure. Thereby, it can be set as the active energy ray hardening-type adhesive layer (UV curing type adhesive layer etc.) hardened | cured by irradiation of an active energy ray (ultraviolet rays etc.), and the peeling force of the adhesive bond layer 3 and the adhesive layer 2 Can be reduced.

Examples of the double bond-containing isocyanate compound include methacryloyl isocyanate, acryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, 2-acryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. A double bond containing isocyanate compound can be used individually or in combination of 2 or more types.

The use amount of the double bond-containing isocyanate compound is preferably in the range of 50 mol% to 95 mol%, more preferably in the range of 75 mol% to 90 mol% with respect to the hydroxyl group-containing monomer. When the use amount of the double bond-containing isocyanate compound is less than 50 mol% with respect to the hydroxyl group-containing monomer, crosslinking after irradiation with active energy rays is insufficient, resulting in a decrease in pick-up property and a paste for a semiconductor chip with an adhesive layer 3 The rest may occur.

Moreover, in order to adjust the adhesive force before active energy ray irradiation and the adhesive force after active energy ray irradiation to an active energy ray hardening-type adhesive, an external crosslinking agent can also be used suitably. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive. The amount of the external crosslinking agent used is generally 20 parts by weight or less (preferably 0.1 to 10 parts by weight) with respect to 100 parts by weight of the base polymer. Further, the active energy ray-curable pressure-sensitive adhesive may contain various conventionally known additives such as tackifiers, anti-aging agents, and foaming agents in addition to the above components, if necessary.

The thickness of the pressure-sensitive adhesive layer 2 is not particularly limited and can be appropriately determined, but is generally about 5 to 200 μm.

(Thickness of adhesive layer 3 / total thickness of substrate 1 and pressure-sensitive adhesive layer 2)
The thickness of the adhesive layer 3 / the total thickness of the base material 1 and the pressure-sensitive adhesive layer 2 is preferably 0.045 or more, more preferably 0.05 or more. When it is 0.045 or more, a polishing (dressing) effect of the dicing blade can be obtained, and a reduction in sharpness of the dicing blade can be suppressed. The thickness of the adhesive layer 3 / the total thickness of the substrate 1 and the pressure-sensitive adhesive layer 2 is preferably 0.9 or less, more preferably 0.45 or less, and still more preferably 0.3 or less. When it is 0.9 or less, it is possible to prevent the life of the dicing blade from becoming excessively short.

(Method for manufacturing semiconductor device)
Hereinafter, a method for manufacturing a semiconductor device using the dicing die bonding film 10 will be described with reference to FIG. FIG. 3 is a diagram schematically showing a part of the manufacturing process of the semiconductor device.

First, the semiconductor wafer 4 is pressure-bonded onto the semiconductor wafer bonding portion 3a of the adhesive layer 3 in the dicing die bonding film 10, and this is bonded and held (fixing process). This step is performed while pressing with a pressing means such as a pressure roll.

Next, the semiconductor wafer 4 is cut into pieces by a dicing blade, and the semiconductor chip 5 is obtained. Although the dicing method is not particularly limited, the semiconductor wafer 4 and the adhesive layer 3 are at least cut with a dicing blade B having a blade width smaller than that of the dicing blade A after cutting to half the thickness of the semiconductor wafer 4 with the dicing blade A. The method (step cut) is preferred.

The dicing blade is preferably one in which diamond particles are embedded in a resin.

The blade thickness of the dicing blade is preferably as thin as possible, and those having a thickness of about 15 to 30 μm are often used. This is because the number of chips that can be produced from one semiconductor wafer 4 increases as the dicing line becomes narrower. This tendency is more conspicuous when a small semiconductor chip 5 is manufactured from a semiconductor wafer 4 having many dicing lines.

Since the dicing blade is worn out when the dicing is performed, the cutting amount determines the life of the dicing blade.

If the dicing blade is thin, the strength of the dicing blade is weakened. Therefore, the strength cannot be maintained unless the cutting amount of the dicing blade is reduced. As a result, the life of the dicing blade is shortened. On the other hand, if the cutting amount is excessively large, the dicing blade is cracked during dicing, or the dicing blade is distorted during dicing to cause chip cracking or chipping. Therefore, the cutting amount of such a thin dicing blade is preferably 400 to 1000 μm.

In order to peel off the semiconductor chip 5 bonded and fixed to the dicing die bonding film 10, the semiconductor chip 5 is picked up. The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up each semiconductor chip 5 from the dicing die bonding film 10 side with a needle and picking up the pushed semiconductor chip 5 with a pick-up device may be mentioned.

Here, when the pressure-sensitive adhesive layer 2 is an ultraviolet curable type, the pickup is performed after the pressure-sensitive adhesive layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force with respect to the adhesive layer 3 of the adhesive layer 2 falls, and peeling of the semiconductor chip 5 becomes easy. As a result, the pickup can be performed without damaging the semiconductor chip 5. Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary.

The picked-up semiconductor chip 5 is bonded and fixed to the adherend 6 via the adhesive layer 3 (die attach). The die attach temperature is not particularly limited, and is, for example, 80 to 150 ° C.

Then, the semiconductor chip 5 and the adherend 6 are bonded by heat-treating the adhesive layer 3. The temperature of the heat treatment is preferably 80 ° C. or higher, more preferably 170 ° C. or higher. The temperature of the heat treatment is preferably 200 ° C. or lower, more preferably 180 ° C. or lower. When the temperature of the heat treatment is within the above range, it can be bonded well. Moreover, the time of heat processing can be set suitably.

Next, a wire bonding step of electrically connecting the tip of the terminal portion (inner lead) of the adherend 6 and an electrode pad (not shown) on the semiconductor chip 5 with the bonding wire 7 is performed. As the bonding wire 7, for example, a gold wire, an aluminum wire or a copper wire is used. The temperature during wire bonding is preferably 80 ° C. or higher, more preferably 120 ° C. or higher, and the temperature is preferably 250 ° C. or lower, more preferably 175 ° C. or lower. The heating time is several seconds to several minutes (for example, 1 second to 1 minute). The connection is performed by a combination of vibration energy by ultrasonic waves and pressure energy by pressurization while being heated so as to be within the temperature range.

Subsequently, a sealing step for sealing the semiconductor chip 5 with the sealing resin 8 is performed. This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step is performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is preferably 165 ° C. or higher, more preferably 170 ° C. or higher, and the heating temperature is preferably 185 ° C. or lower, more preferably 180 ° C. or lower.

If necessary, the sealed material may be further heated (post-curing step). Thereby, the sealing resin 8 which is insufficiently cured in the sealing process can be completely cured. The heating temperature can be set as appropriate.

As described above, the step (I) of bonding the adhesive layer 3 of the dicing die bonding film 10 and the semiconductor wafer 4, the step (II) of dicing the semiconductor wafer 4 to form the semiconductor chip 5, and the step (II) Step (III) of picking up the formed semiconductor chip 5 together with the adhesive layer 3 and step (IV) of die-attaching the semiconductor chip 5 picked up by the step (III) to the adherend 6 via the adhesive layer 3 A semiconductor device can be manufactured by a method including:

EXAMPLES Hereinafter, although this invention is demonstrated in detail using an Example, this invention is not limited to a following example, unless the summary is exceeded.

The components used in the examples will be described.
Alumina filler 1: DAW-03 manufactured by Denki Kagaku Kogyo Co., Ltd. (spherical alumina filler, average particle size: 5.1 μm, specific surface area: 0.5 m ² / g)
Alumina filler 2: ASFP-20 manufactured by Denki Kagaku Kogyo Co., Ltd. (spherical alumina filler, average particle size: 0.3 μm, specific surface area: 12.5 m ² / g)
Alumina filler 3: AO802 manufactured by Admatechs Co., Ltd. (spherical alumina filler, average particle size: 0.7 μm, specific surface area: 7.5 m ² / g)
Acrylic polymer 1: Teisan resin SG-70L manufactured by Nagase ChemteX Corporation (acrylic copolymer, Mw: 900,000, glass transition temperature: −13 ° C.)
Acrylic polymer 2: Teisan resin SG-P3 manufactured by Nagase ChemteX Corporation (acrylic copolymer, Mw: 850,000, glass transition temperature: 12 ° C.)
Phenol resin: MEH-7851H (phenol resin, Mw: 1580) manufactured by Meiwa Kasei Co., Ltd.
Epoxy resin: JER827 (bisphenol A type epoxy resin, Mw: 370) manufactured by Mitsubishi Chemical Corporation
Silane coupling agent: KBM-403 (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd.

A method for surface treatment of the alumina filler will be described.
Alumina fillers 1 to 3 were surface-treated with a silane coupling agent to obtain surface-treated alumina fillers 1 to 3. The surface treatment was performed by a dry method, and was treated with an amount of a silane coupling agent represented by the following formula.

Silane coupling agent treatment amount = (weight of alumina filler (g) × specific surface area of alumina filler (m ² / g)) / minimum coating area of silane coupling agent (m ² / g)
Minimum covering area of silane coupling agent (m ² /g)=6.02×10 ²³ × 13 × 10 ⁻²⁰ / Molecular weight of silane coupling agent

[Examples 1-6 and Comparative Examples 2-6]
(Production of die bonding film (adhesive layer))
In accordance with the blending ratio shown in Table 1, the surface-treated alumina filler, acrylic polymer, phenol resin and epoxy resin were placed in a 150 mL polyethylene (PE) container, and a rotating and rotating mixer (manufactured by Shinky Corp., ARE-310). ) For 4 minutes at 2000 rpm. Next, methyl ethyl ketone (MEK) was added, and the mixture was further stirred at 2000 rpm for 5 minutes to obtain an adhesive composition solution having a viscosity suitable for coating. Thereafter, the adhesive composition solution was filtered using a 400 mesh (46 μm mesh) twill SUS mesh, and the release treatment film (peeling) made of a polyethylene terephthalate film having a thickness of 50 μm obtained by silicone release treatment of the filtrate. After coating on the liner, it was dried at 130 ° C. for 2 minutes to obtain a die bonding film (thickness shown in Table 1).

(Production of dicing film)
In a reaction vessel equipped with a condenser tube, a nitrogen inlet tube, a thermometer and a stirrer, 2-ethylhexyl acrylate (sometimes referred to as “2EHA”): 80 parts, 2-hydroxyethyl acrylate (“HEA”) 20 parts and toluene: 65 parts were added, and an acrylic polymer X was obtained by polymerizing in a nitrogen stream at 61 ° C. for 6 hours.

2-Methacryloyloxyethyl isocyanate (sometimes referred to as “MOI”): 24.1 parts (90 mol% with respect to HEA) was added to 100 parts of this acrylic polymer X, and 48 parts at 50 ° C. in an air stream. An addition reaction treatment was performed for a time to obtain an acrylic polymer Y.

Next, polyisocyanate compound (trade name “Coronate L” manufactured by Nippon Polyurethane Industry Co., Ltd.): 3 parts for acrylic polymer Y: 100 parts, thermally expandable microspheres (trade name “Microsphere F” as a foaming agent) -50D "manufactured by Matsumoto Yushi Seiyaku Co., Ltd .; foaming start temperature: 120 ° C .: 35 parts, and photopolymerization initiator (trade name“ Irgacure 651 ”manufactured by Ciba Specialty Chemicals): 5 parts An adhesive solution of an energy ray curable thermally expandable adhesive was prepared.

Subsequently, an adhesive solution of an active energy ray-curable heat-expandable pressure-sensitive adhesive is applied onto a base material (polypropylene) made of polypropylene having a thickness of 100 μm, and then dried, and a pressure-sensitive adhesive having a thickness of 10 μm is formed on the base material. A layer was formed.

Furthermore, a dicing film was produced by irradiating only 500 mJ / cm 2 (ultraviolet irradiation accumulated light amount) of ultraviolet light only on the part corresponding to the wafer pasting part on the adhesive layer, and curing the corresponding part.

(Production of dicing die bonding film)
The die bonding film was transferred onto the pressure-sensitive adhesive layer of the dicing film to produce a dicing die bonding film.

[Comparative Example 1]
A dicing die bonding film was produced in the same manner as in Example 1 except that the production method of the die bonding film was changed.
(Production of die bonding film)
According to the blending ratio shown in Table 1, acrylic polymer, phenol resin and methyl ethyl ketone (MEK) were put in a plastic cup container and stirred for 4 minutes at 3000 rpm with a disper device to obtain an adhesive composition solution. Thereafter, the adhesive composition solution was filtered using a 400 mesh (46 μm mesh) twill SUS mesh, and the release treatment film (peeling) made of a polyethylene terephthalate film having a thickness of 50 μm obtained by silicone release treatment of the filtrate. After coating on the liner, it was dried at 130 ° C. for 2 minutes to obtain a die bonding film.

[Evaluation]
The following evaluation was performed using the obtained dicing die-bonding film. The results are shown in Table 1.

(Blade wear)
The back surface of the silicon bare wafer was ground using a grinding device (DGP-8760 manufactured by DISCO Corporation) until the thickness of the silicon bare wafer (8 inch diameter, thickness 750 μm) reached 100 μm. Using a laminator, a silicon bare wafer (thickness: 100 μm, 8 inches) was attached to a die bonding film (adhesive layer) of a dicing die bonding film at 60 ° C. at a speed of 10 m / min and a pressure of 0.15 MPa. Then, it affixed on the dicing ring and performed the step cut with the dicer (DFD6760) by DISCO Corporation.

Hereinafter, step cutting will be described with reference to FIGS.
The blade height was set so that the first dicing blade 21 (Z1 blade) cuts the silicon bare wafer 24 to a depth of 50 μm, and the silicon bare wafer 24 was cut 100 m under the conditions of a speed of 50 mm / sec and a rotational speed of 40000 rpm (FIG. 4). Thereafter, the second dicing blade 23 (Z2 blade) is set so as to cut the substrate 1 to a depth of 10 μm, and is cut 100 m along the cut 22 under the conditions of a speed of 50 mm / sec and a rotation speed of 45000 rpm. The adhesive layer 3 was cut (see FIG. 5). The amount of washing water was set to 1 L / min for each of the cooler, shower, and spray.

As the Z1 blade, 203O-SE 27HCDD manufactured by DISCO Corporation was used.
Hereinafter, the specifications of the Z1 blade will be described.
DISCO Co., Ltd. 203O-SE 27HCDD
Concentration (diamond particle concentration): Standard concentration Particle size (diamond particle size): # 3500
Bond: Standard type Base shape: Sharp edge base Inner and outer diameter Dimensions: Outer diameter 55.56 mm (diameter), inner diameter 19.05 mm (diameter)
Particle size symbol: C
Cutting edge amount: 0.76 to 0.89 mm
Calf width (blade width): 0.030 to 0.035 mm

As the Z2 blade, 203O-SE 27HCBB was used.
Hereinafter, the specifications of the Z2 blade will be described.
DISCO Corporation 203O-SE 27HCBB
Concentration (diamond particle concentration): Standard concentration Particle size (diamond particle size): # 3500
Bond: Standard type Base shape: Sharp edge base Inner and outer diameter Dimensions: Outer diameter 55.56 mm (diameter), inner diameter 19.05 mm (diameter)
Particle size symbol: C
Cutting edge amount: 0.51 to 0.64 mm
Calf width (blade width): 0.020 to 0.025 mm

The amount of wear of the Z2 blade was measured and obtained by a contact type blade positioning function of a dicing apparatus (DFD6361, manufactured by DISCO).

(Presence or absence of whiskers (1))
Dicing was performed in the same manner as described for the blade wear amount except that 300 m was diced. The wafer with adhesive (chip with adhesive) separated from the dicing film was peeled off, and the dicing line was observed with an optical microscope. A case where a whisker-like foreign material having a length of 20 μm or more was generated was judged as x, and a case where the foreign material was less than 20 μm or there was no whisker-like foreign material was judged as ◯.

(Presence or absence of whiskers (2))
Dicing was performed in the same manner as described for the blade wear amount except that 300 m was diced. The chip with adhesive was peeled off from the dicing film, and the intersection of dicing lines was observed with an optical microscope. The number of observation points was 5 in total per one silicon bare wafer, one near the center was observed, and four near the outer periphery of the wafer (within 5 cm from the outer periphery). Of the five places in total, the places where the whiskers of 100 μm or more occurred were counted. In Table 1, “0/5” indicates that no whiskers of 100 μm or more were generated in all five locations. In Table 1, “5/5” indicates that beards of 100 μm or more were generated at all five locations.

In Comparative Example 1 in which no alumina filler was blended in the adhesive layer, the blade wear amount was too small, the blade sharpness was lowered, and beard was generated. Further, in Comparative Examples 2 and 3 where the thickness of the adhesive layer was large, the amount of blade wear was too large, and it was impossible to evaluate the presence or absence of whiskers. In Comparative Example 4 in which the thickness of the adhesive layer was small, the blade wear amount was too small and beard was generated. Even in Comparative Example 5 with a small amount of alumina filler, the amount of blade wear was too small and beard was generated. Further, in Comparative Example 6 having a large amount of alumina filler, the silicon bare wafer did not adhere to the adhesive layer, and the amount of wear and the occurrence of whiskers could not be evaluated.

On the other hand, in Examples 1-6 in which an alumina filler was blended in the adhesive layer and the thickness of the adhesive layer / total thickness of the base material and the pressure-sensitive adhesive layer was designed within a specific range, the blade wear amount could be optimized, Occurrence could be suppressed.

DESCRIPTION OF SYMBOLS 1 Base material 2 Adhesive layer 3 Adhesive layer 4 Semiconductor wafer 5 Semiconductor chip 6 To-be-adhered body 7 Bonding wire 8 Sealing resin 10 Dicing die-bonding film 11 Dicing film 21 1st dicing blade 22 Notch 23 2nd dicing Blade 24 Silicon bare wafer

Claims (3)

A dicing die-bonding film in which a base material, an adhesive layer and an adhesive layer are laminated in this order,
In a state where a silicon bare wafer having a thickness of 100 μm is bonded to the adhesive layer, the first dicing blade cuts the silicon bare wafer by 100 m with a cutting depth of 50 μm,
The second dicing blade when the second dicing blade cuts the silicon bare wafer and the adhesive layer by 100 m along the incision of the first dicing blade at a cutting depth that reaches at least the pressure-sensitive adhesive layer. The amount of wear is 20 to 200 μm,
The blade width of the second dicing blade is smaller than the blade width of the first dicing blade,
The incision forming conditions by the first dicing blade are a speed of 50 mm / sec and a rotational speed of 40000 rpm,
A dicing die bonding film in which cutting conditions by the second dicing blade are a speed of 50 mm / sec and a rotation speed of 45000 rpm. The dicing / die bonding film according to claim 1, wherein the thickness of the adhesive layer / the total thickness of the base material and the pressure-sensitive adhesive layer is 0.045 to 0.9. The adhesive layer contains a spherical alumina filler as an abrasive,
3. The dicing die bonding film according to claim 1, wherein a content of the spherical alumina filler in the adhesive layer is 60 to 88 wt%.