CN104212369A

CN104212369A - Thermosetting chip bonding film, chip bonding film with cutting disc, and manufacturing method of semiconductor device

Info

Publication number: CN104212369A
Application number: CN201410245350.4A
Authority: CN
Inventors: 木村雄大; 三隅贞仁; 大西谦司; 菅生悠树; 宍户雄一郎
Original assignee: Nitto Denko Corp
Current assignee: Nitto Denko Corp
Priority date: 2013-06-04
Filing date: 2014-06-04
Publication date: 2014-12-17
Also published as: TW201506116A; KR20140142675A

Abstract

The invention provides a thermosetting chip bonding film, a chip bonding film with a cutting disc, and a manufacturing method of a semiconductor device. The thermosetting chip bonding film is advantaged by high heat conductivity, and can be fully attached to the concave and convex shape of an adherend when attached to the adherend. The heat conductivity coefficient of the thermosetting chip bonding film is above 1W/mK after being thermosured, the thermosetting chip bonding film contains heat conductive particles with the heat conductivity coefficient of 12W/mK and above 75% of the integral weight relative to the thermosetting chip bonding film, and the detected melt viscosity of the thermosetting chip bonding film is below 200 PaS with the cutting rate of 50 sec-1 at a temperature of 130 DEG C.

Description

Thermosetting die bonding film, the band die bonding film of cutting blade and the manufacture method of semiconductor device

Technical field

The present invention relates to thermosetting die bonding film, the band die bonding film of cutting blade and the manufacture method of semiconductor device.

Background technology

In recent years, along with the propelling of the high speed of the data processing of semiconductor device, the heating quantitative change from semi-conductor chip is many, and the importance possessing the design of the semiconductor device of thermal diffusivity increases.Heat not only can cause detrimentally affect to semiconductor device self, also can cause various detrimentally affect to the electronic machine main body being assembled with semiconductor device.Consider various method as the encapsulation countermeasure of dispelling the heat, the most important thing is the heat radiation clipping the substrate such as printed base plate, lead frame.

Therefore, in the past, substrate and semi-conductor chip bonding in, sometimes use the caking agent with high thermal conductivity.In the past, as this caking agent, employ the silver-colored paste that thermal conductivity among caking agent is higher.

But, in recent years, due to universal, the high performance of smart mobile phone, panel computer, along with the propelling of frivolous, short and smallization of semiconductor device, for silver-colored paste, there is the situation of the assembling difficulty of semiconductor device.

Specifically, in the purposes of smart mobile phone, panel computer, employ package, described package employs little, the thin semi-conductor chip of chip area.But, when wanting to utilize the caking agent of paste-like to carry out bonding such semi-conductor chip, the problem of following various manufacture views can be there is: semi-conductor chip is damaged or have caking agent to be involved in or semi-conductor chip produces in the circuit face of semi-conductor chip because semi-conductor chip is thinner.In addition, make the caking agent of paste-like bonding and easily producing space in the technique of solidification.Therefore, the space produced between semi-conductor chip and substrate can hinder heat radiation, thus becomes and cannot show the bad reason such as designed thermal conductivity (thermal diffusivity).

On the other hand, there will be a known the die bonding film (such as with reference to patent documentation 1) of sheet in the past.If use such die bonding film, then can suppress the inclination of the breakage of chip, being involved in of caking agent, chip.But, compared with silver-colored paste, die bonding film in the past thermal conductivity low in exist improvement leeway.

prior art document

patent documentation

Patent documentation 1: Japanese Unexamined Patent Publication 2008-218571 publication

Summary of the invention

the problem that invention will solve

As the first problem, in order to make die bonding film be high thermal conductivity, such as, need the thermal conductive particle of filling compounding high thermal conductivity in a large number.But, owing to filling thermal conductive particle in a large number, in various characteristic, produce shortcoming sometimes.Namely, semi-conductor chip mostly fits in the objects that concave-convex surface is large to a certain extent such as printed circuit board (PCB) and uses, under the state being filled with thermal conductive particle in die bonding film in a large number, due to the interaction of thermal conductive particle and resin, the viscosity of die bonding film uprises, thus produces concavo-convex and so on the problem that mobility reduces, cannot follow fully the substrates such as printed circuit board (PCB).

Die bonding film containing resin usually apply shear-stress time viscosity can reduce.Especially so that at a high speed (such as shearing rate is 20 ~ 100 seconds ^-1left and right) apply shear-stress time, viscosity can significantly reduce.Therefore, there is following method: when die bonding film is attached at substrate, making it produce high speed shear stress by applying pressure, viscosity being reduced, thus makes it follow the concavo-convex of substrate.But under the state being filled with thermal conductive particle in die bonding film in a large number, there are the following problems: even if apply pressure and make it produce shear-stress, viscosity also can not reduce fully sometimes, and die bonding film cannot follow the concavo-convex of substrate fully.

And, when die bonding film cannot follow substrate concavo-convex, between die bonding film and substrate, can space be produced.When having space between die bonding film and substrate, there are the following problems: except producing the problem of thermal diffusivity reduction as described above, also may produce reliability and reduce, the problem with the stripping of adherend etc. occurs in Reflow Soldering operation.

First invention is made in view of problem point, its object is to, the concavo-convex thermosetting die bonding film that adherend can be followed when providing thermal conductivity high and be attached at adherend fully, the die bonding film employing the band cutting blade of this thermosetting die bonding film and employ the manufacture method of semiconductor device of die bonding film of this band cutting blade.

As the second problem, in order to make die bonding film be high thermal conductivity, such as, need the thermal conductive particle of filling compounding high thermal conductivity in a large number.But, owing to filling thermal conductive particle in a large number, in various characteristic, produce shortcoming sometimes.Namely, semi-conductor chip mostly fits in the objects that concave-convex surface is large to a certain extent such as printed circuit board (PCB) and uses, under the state being filled with thermal conductive particle in die bonding film in a large number, due to the interaction of thermal conductive particle and resin, the viscosity of die bonding film uprises, thus produces concavo-convex and so on the problem that mobility reduces, cannot follow fully the substrates such as printed circuit board (PCB).And, when die bonding film cannot follow substrate concavo-convex, between die bonding film and substrate, can space be produced.When having space between die bonding film and substrate, there are the following problems: except producing the problem of thermal diffusivity reduction as described above, also may produce reliability and reduce, the problem with the stripping of adherend etc. occurs in Reflow Soldering operation.

Second the present invention makes in view of problem point, its object is to, provide thermal conductivity high and the low thermosetting die bonding film of viscosity, employ the die bonding film of the band cutting blade of this thermosetting die bonding film and employ the manufacture method of semiconductor device of die bonding film of this band cutting blade.

As the 3rd problem, in order to make die bonding film be high thermal conductivity, such as, need the thermal conductive particle of filling compounding high thermal conductivity in a large number.But, owing to filling thermal conductive particle in a large number, in various characteristic, produce shortcoming sometimes.Namely, semi-conductor chip mostly fits in the objects that concave-convex surface is large to a certain extent such as printed circuit board (PCB) and uses, under the state being filled with thermal conductive particle in die bonding film in a large number, due to the interaction of thermal conductive particle and resin, the viscosity of die bonding film uprises, thus produces concavo-convex and so on the problem that mobility reduces, cannot follow fully the substrates such as printed circuit board (PCB).And, when die bonding film cannot follow substrate concavo-convex, between die bonding film and substrate, can space be produced.When having space between die bonding film and substrate, there are the following problems: except producing the problem of thermal diffusivity reduction as described above, also may produce reliability and reduce, the problem with the stripping of adherend etc. occurs in Reflow Soldering operation.

3rd the present invention makes in view of problem point, its object is to, provide thermal conductivity high and concavo-convex thermosetting die bonding film, the die bonding film of band cutting blade employing thermosetting die bonding film and the manufacture method of semiconductor device of adherend can be followed well.

As the 4th problem, in order to make die bonding film be high thermal conductivity, such as, need the thermal conductive particle of filling compounding high thermal conductivity in a large number.But, when using the thermal conductive particle little relative to the particle diameter of the thickness of die bonding film, due to the interaction of thermal conductive particle and resin, the viscosity of die bonding film uprises, thus produces the concavo-convex problem that mobility reduces, die bonding film cannot follow the substrates such as printed circuit board (PCB) fully.And, when die bonding film cannot follow substrate concavo-convex, between die bonding film and substrate, can space be produced.

On the other hand, when using the thermal conductive particle large relative to the particle diameter of the thickness of die bonding film, the concavo-convex change on the surface of die bonding film is large, when fitting in the substrates such as printed circuit board (PCB), can produce space between die bonding film and substrate.When having space between die bonding film and substrate, there are the following problems: except producing the problem of thermal diffusivity reduction as described above, also may produce reliability and reduce, the problem with the stripping of adherend etc. occurs in Reflow Soldering operation.

4th the present invention makes in view of problem point, its object is to, the thermosetting die bonding film that can suppress to produce space when providing thermal conductivity high and fit in adherend between adherend, the die bonding film employing the band cutting blade of this thermosetting die bonding film and employ the manufacture method of semiconductor device of die bonding film of this band cutting blade.

As the 5th problem, in order to make die bonding film be high thermal conductivity, such as, need the thermal conductive particle of filling compounding high thermal conductivity in a large number.But, owing to filling thermal conductive particle in a large number, in various characteristic, produce shortcoming sometimes.Namely, semi-conductor chip mostly fits in the objects that concave-convex surface is large to a certain extent such as printed circuit board (PCB) and uses, under the state being filled with thermal conductive particle in die bonding film in a large number, due to the interaction of thermal conductive particle and resin, the viscosity of die bonding film uprises, thus produces concavo-convex and so on the problem that mobility reduces, cannot follow fully the substrates such as printed circuit board (PCB).And, when die bonding film cannot follow substrate concavo-convex, between die bonding film and substrate, can space be produced.When having space between die bonding film and substrate, there are the following problems: except producing the problem of thermal diffusivity reduction as described above, also may produce reliability and reduce, the problem with the stripping of adherend etc. occurs in Reflow Soldering operation.

5th the present invention carries out in view of problem point, its object is to, produces space even if provide between die bonding film and adherend, also can reduce the manufacture method of the semiconductor device of the impact caused by space.

for the scheme of dealing with problems

Present inventors etc. are studied thermosetting die bonding film to solve above-mentioned first problem.It found that, by adopting following technical scheme, can improve thermal conductivity and follow the concavo-convex of adherend fully when being attached at adherend, thus completes first invention.

That is, the feature of the first thermosetting die bonding film of the present invention is,

Its thermal conductivity after thermofixation is more than 1W/mK,

The thermal conductivity that it contains relative to thermosetting die bonding film entirety is more than 75 % by weight is the thermal conductive particle of more than 12W/mK,

Described thermosetting die bonding film at 130 DEG C with 50 seconds ^-1shearing rate measure melt viscosity be below 200Pas.

According to preceding solution, because containing being more than 75 % by weight relative to thermosetting die bonding film entirety, thermal conductivity is the thermal conductive particle of more than 12W/mK, the thermal conductivity of this thermosetting die bonding film after thermofixation is more than 1W/mK, and the thermal diffusivity of the semiconductor device therefore using this thermosetting die bonding film to manufacture is excellent.

In addition, due at 130 DEG C with 50 seconds ^-1shearing rate measure melt viscosity, high speed shear namely at 130 DEG C time melt viscosity be below 200Pas, therefore, by thermosetting die bonding film being attached at pressure during adherend, the viscosity of thermosetting die bonding film reduces.Therefore, it is possible to follow concavo-convex, the generation that can suppress space of the adherends such as printed circuit board (PCB) fully.

In preceding solution, the median size of aforementioned thermal conductive particle is preferably more than 1 μm and less than 10 μm.

By making the median size of aforementioned thermal conductive particle be more than 1 μm, the wettability of thermosetting die bonding film to adherend can be guaranteed, making it play good cementability.In addition, by making the median size of aforementioned thermal conductive particle be less than 10 μm, interpolation thermal conductive particle can be made and effect that the thermal conductivity brought improves is better.In addition, it is less than 10 μm by making the median size of aforementioned thermal conductive particle, can the thickness of thinning thermosetting die bonding film, and then semi-conductor chip high level can be dissolved, and can prevent because thermal conductive particle is outstanding and produce die crack from thermosetting die bonding film.

In preceding solution, preferably, containing thermoplastic resin and thermosetting resin,

By foregoing thermosetting resins containing weight part be designated as A, by aforementioned thermoplastic resin containing weight part be designated as B time, A/B is more than 5.

Containing thermoplastic resin and thermosetting resin, by foregoing thermosetting resins containing weight part be designated as A, by front thermoplastic resin containing weight part be designated as B time, if A/B is more than 5, then with 50 seconds at being easily reduced in 130 DEG C ^-1shearing rate measure melt viscosity.

In preceding solution, preferably, foregoing thermosetting resins comprises the thermosetting resin that softening temperature is less than 100 DEG C.

If foregoing thermosetting resins comprises the thermosetting resin that softening temperature is less than 100 DEG C, then low velocity shear stress (such as 5 seconds are applied to thermosetting die bonding film ^-1shearing rate) time melt viscosity at 130 DEG C, melt viscosity at do not execute stressed state 130 DEG C of thermosetting die bonding film easily reduce.Its result, even if the reducing amount of viscosity is few when applying high speed shear stress, also can follow concavo-convex, the generation that can suppress space of adherend fully.

In preceding solution, preferably, foregoing thermosetting resins comprises the thermosetting resin be at room temperature in a liquid state.

When foregoing thermosetting resins comprises the thermosetting resin be at room temperature in a liquid state, concavo-convex, the generation that can suppress space of adherend can be followed more fully.It should be noted that, be at room temperature in a liquid state and refer to 5 seconds ^-1shearing rate measure 23 DEG C at viscosity be 1 ~ 500,000 mPas.

In addition, the feature of the manufacture method of the first semiconductor device of the present invention is, it comprises following operation:

Prepare the operation of aforementioned described thermosetting die bonding film; And

Clip aforementioned thermosetting die bonding film, by former semiconductor chip chip join to the chip join operation on adherend.

According to preceding solution, because the aforementioned thermosetting die bonding film thermal conductivity that to contain relative to thermosetting die bonding film entirety be more than 75 % by weight is the thermal conductive particle of more than 12W/mK, the thermal conductivity of this thermosetting die bonding film after thermofixation is more than 1W/mK, and the thermal diffusivity of the semiconductor device therefore using this thermosetting die bonding film to manufacture is excellent.

In addition, the die bonding film of the first band cutting blade of the present invention, in order to solve aforesaid problem, is characterized in that, cutting blade is laminated with aforementioned described thermosetting die bonding film, and described cutting blade is folded at layers on substrates binder layer.

Prepare the operation of the die bonding film of aforementioned described band cutting blade;

The back side of the thermosetting die bonding film of the die bonding film of aforementioned strip cutting blade and semiconductor crystal wafer is carried out the bonding process of fitting;

Aforesaid semiconductor wafer is cut together with aforementioned thermosetting die bonding film, forms the cutting action of the semi-conductor chip of shaped like chips;

By former semiconductor chip together with aforementioned thermosetting die bonding film from the pickup process that the die bonding film of aforementioned strip cutting blade picks up; And

In addition, due to the melt viscosity of aforementioned thermosetting die bonding film at 130 DEG C during high speed shear, at 130 DEG C with 50 seconds ^-1the melt viscosity that measures of shearing rate be below 200Pas, therefore, by thermosetting die bonding film being attached at pressure during adherend, the viscosity of thermosetting die bonding film reduces.Therefore, it is possible to follow concavo-convex, the generation that can suppress space of the adherends such as printed circuit board (PCB) fully.

In addition, present inventor etc. are studied thermosetting die bonding film to solve above-mentioned second problem.It found that, by adopting following technical scheme, can improve thermal conductivity and reduce viscosity, thus completing second the present invention.

That is, the feature of the second thermosetting die bonding film of the present invention is,

Its thermal conductivity after thermofixation is more than 1W/mK,

Melt viscosity at 130 DEG C is in the scope of 10Pas ~ 300Pas.

According to preceding solution, because the thermal conductivity after thermofixation is more than 1W/mK, the thermal diffusivity of the semiconductor device therefore using this thermosetting die bonding film to manufacture is excellent.In addition, the melt viscosity at 130 DEG C in the scope of 10Pas ~ 300Pas, maintain film shape and viscosity is lower.Therefore, it is possible to follow concavo-convex, the generation that can suppress space of the adherends such as printed circuit board (PCB) fully.

In preceding solution, preferably, containing being more than 75 % by weight relative to thermosetting die bonding film entirety, thermal conductivity is the thermal conductive particle of more than 12W/mK.

When being the thermal conductive particle of more than 12W/mK containing the thermal conductivity being more than 75 % by weight relative to thermosetting die bonding film entirety, the thermal diffusivity of the semiconductor device using this thermosetting die bonding film to manufacture is more excellent.

In preceding solution, preferably, the median size of aforementioned thermal conductive particle is more than 1 μm and less than 10 μm.

It is more than 1 μm by making the median size of aforementioned thermal conductive particle, the wettability of thermosetting die bonding film to adherend can be guaranteed, making it play good cementability, by being less than 10 μm, interpolation thermal conductive particle can be made and effect that the thermal conductivity brought improves is better.

In addition, the feature of the manufacture method of the second semiconductor device of the present invention is, it comprises following operation:

According to preceding solution, because the thermal conductivity of aforementioned thermosetting die bonding film after thermofixation is more than 1W/mK, therefore, the thermal diffusivity of the semiconductor device using this thermosetting die bonding film to manufacture is excellent.In addition, because the melt viscosity at 130 DEG C of aforementioned thermosetting die bonding film is in the scope of 10Pas ~ 300Pas, therefore maintain the shape of film and viscosity is lower.Therefore, it is possible to follow concavo-convex, the generation that can suppress space of the substrates such as printed circuit board (PCB) fully.

In addition, the die bonding film of the second band cutting blade of the present invention, in order to solve aforesaid problem, is characterized in that, cutting blade is laminated with aforementioned described thermosetting die bonding film, and described cutting blade is folded at layers on substrates binder layer.

According to preceding solution, because the thermal conductivity of aforementioned thermosetting die bonding film after thermofixation is more than 1W/mK, the thermal diffusivity of the semiconductor device therefore using this thermosetting die bonding film to manufacture is excellent.In addition, because the melt viscosity at 130 DEG C of aforementioned thermosetting die bonding film is in the scope of 10Pas ~ 300Pas, therefore maintain the shape of film and viscosity is lower.Therefore, it is possible to follow concavo-convex, the generation that can suppress space of the substrates such as printed circuit board (PCB) fully.

In addition, present inventor etc., in order to solve above-mentioned 3rd problem, are studied for thermosetting die bonding film.It found that, by adopting following technical scheme, thermal conductivity is high and can follow the concavo-convex of adherend well, thus completes the 3rd the present invention.

3rd the present invention relates to a kind of thermosetting die bonding film: it comprises thermal conductive particle, and the median size of above-mentioned thermal conductive particle is 3 μm ~ 7 μm, and specific surface area is 1m ²/ g ~ 3m ²/ g, the content of above-mentioned thermal conductive particle is more than 75 % by weight relative to thermosetting die bonding film entirety.

In 3rd the present invention, the median size of thermal conductive particle is set comparatively large, specific surface area is set less.Thereby, it is possible to improve the mobility at common chip join temperature (120 DEG C ~ 130 DEG C) etc.Its result, can obtain good concavo-convex tracing ability.In addition, by filling with higher degree the thermal conductive particle that thermal conductivity is more than 12W/mK, high thermal conductivity can be obtained.

The thermal conductivity of above-mentioned thermal conductive particle is preferably more than 12W/mK.Thereby, it is possible to obtain high thermal conductivity.

The thermal resistance of above-mentioned thermosetting die bonding film is preferably 30 × 10 ^-6m ²below K/W.

Above-mentioned thermal conductive particle is preferably selected from least a kind in the group be made up of aluminum hydroxide particles, Zinc oxide particles, aluminum nitride particle, silicon nitride particle, silicon-carbide particle, magnesium oxide particle and boron nitride particle.They easily obtain the particle that thermal conductivity is high, sphericity is high.

3rd manufacture method that the invention still further relates to a kind of semiconductor device, it comprises following operation: the operation preparing above-mentioned thermosetting die bonding film; And, clip above-mentioned thermosetting die bonding film, by semi-conductor chip chip join to the operation on adherend.

3rd the invention still further relates to a kind of die bonding film with cutting blade, and it is laminated with above-mentioned thermosetting die bonding film on cutting blade, and described cutting blade is folded at layers on substrates binder layer.

3rd manufacture method that the invention still further relates to a kind of semiconductor device, it comprises following operation: the operation preparing the die bonding film of above-mentioned band cutting blade; The above-mentioned thermosetting die bonding film of the die bonding film of above-mentioned band cutting blade and the back side of semiconductor crystal wafer are carried out the operation of fitting; Above-mentioned semiconductor crystal wafer is cut together with above-mentioned thermosetting die bonding film, forms the operation of the semi-conductor chip of shaped like chips; By above-mentioned semi-conductor chip together with above-mentioned thermosetting die bonding film from the operation that the die bonding film of above-mentioned band cutting blade picks up; And, clip above-mentioned thermosetting die bonding film, by above-mentioned semi-conductor chip chip join to the operation on adherend.

In addition, present inventor etc., in order to solve above-mentioned 4th problem, are studied thermosetting die bonding film.It found that, by adopting following technical scheme, producing space, thus complete the 4th the present invention when can improve thermal conductivity and can suppress to fit in adherend and between adherend.

That is, the feature of the 4th thermosetting die bonding film of the present invention is,

It contains the thermal conductive particle that thermal conductivity is more than 12W/mK,

The thermal resistance of this thermosetting die bonding film is 30 × 10 ^-6m ²below K/W,

The thickness of thermosetting die bonding film is designated as C, when the median size of aforementioned thermal conductive particle is designated as D, C/D is in the scope of 4 ~ 30.

According to preceding solution, owing to being the thermal conductive particle of more than 12W/mK, therefore excellent thermal conductivity containing thermal conductivity.In addition, because thermal resistance is 30 × 10 ^-6m ²below K/W, therefore, it is possible to the heat of being released by semi-conductor chip rejects heat to adherend side effectively.

In addition, the thickness of aforementioned thermosetting die bonding film is designated as C, when the median size of aforementioned thermal conductive particle is designated as D, C/D is more than 4, and the median size of thermal conductive particle, relative to the thickness of thermosetting die bonding film, is less than to a certain degree.Therefore, it is possible to it is large concavo-convex to suppress the surface of curing die bonding film to produce.

In addition, aforementioned C/D is less than 30, and the median size of thermal conductive particle, relative to the thickness of thermosetting die bonding film, has size to a certain degree.Therefore, the rising of viscosity is suppressed, and produces space when can suppress to fit in adherend and between adherend.

In preceding solution, preferably, the thickness of thermosetting die bonding film is less than 60 μm.

When the thickness of thermosetting die bonding film is below 60 μm, the heat from semi-conductor chip can be discarded to outside effectively.Therefore, it is possible to improve the thermal diffusivity of the semiconductor device using this thermosetting die bonding film to manufacture.

In preceding solution, preferably, the content of aforementioned thermal conductive particle is more than 75 % by weight relative to thermosetting die bonding film entirety.

When the content of aforementioned thermal conductive particle is more than 75 % by weight relative to thermosetting die bonding film entirety, the thermal diffusivity of the semiconductor device using this thermosetting die bonding film to manufacture is more excellent.

In addition, the feature of the manufacture method of the 4th semiconductor device of the present invention is, it comprises following operation:

According to preceding solution, because aforementioned thermosetting die bonding film contains the thermal conductive particle that thermal conductivity is more than 12W/mK, therefore excellent thermal conductivity.Therefore, the thermal diffusivity of the semiconductor device using this thermosetting die bonding film to manufacture is excellent.In addition, because the thermal resistance of aforementioned thermosetting die bonding film is 30 × 10 ^-6m ²below K/W, therefore, it is possible to effectively reject heat to adherend side by the heat from semi-conductor chip.

In addition, the die bonding film of the 4th band cutting blade of the present invention, in order to solve aforesaid problem, is characterized in that, cutting blade is laminated with aforementioned described thermosetting die bonding film, and described cutting blade is folded at layers on substrates binder layer.

In addition, present inventor etc., in order to solve above-mentioned 5th problem, are studied the manufacture method of semiconductor device.It found that, by adopting following technical scheme, even if create space between die bonding film and substrate, also can reduce the impact caused by space, thus completes the 5th the present invention.

That is, the feature of the manufacture method of the 5th semiconductor device of the present invention is, it comprises following operation:

Prepare the operation of thermosetting die bonding film, the thermal conductivity that it is more than 75 % by weight that described thermosetting die bonding film contains relative to thermosetting die bonding film entirety is the thermal conductive particle of more than 12W/mK, and the thermal conductivity of this thermosetting die bonding film after thermofixation is more than 1W/mK;

Clip aforementioned thermosetting die bonding film, by semi-conductor chip chip join to the chip join operation on adherend; And

Be 1 ~ 20kg/cm at pressure ²condition under, aforementioned thermosetting die bonding film is heated in Heating temperature 80 ~ 200 DEG C, the scope of 0.1 ~ 24 hour heat-up time, makes the heat curing processes of its thermofixation thus.

According to preceding solution, because the thermosetting die bonding film thermal conductivity that to contain relative to thermosetting die bonding film entirety be more than 75 % by weight is the thermal conductive particle of more than 12W/mK, the thermal conductivity of this thermosetting die bonding film after thermofixation is more than 1W/mK, therefore has high thermal conductivity.

In addition, the heat curing processes of aforementioned thermosetting die bonding film thermofixation is made to be 1 ~ 20kg/cm at pressure ²condition under (under pressurized conditions) carry out.Therefore, if in chip join operation, even if create space between die bonding film and adherend, it also can be made to disperse in resin and disappear in appearance and can not expand.Its result, can reduce the impact caused by space.

In addition, the feature of the manufacture method of the 5th semiconductor device of the present invention is, it comprises following operation:

Prepare the operation being laminated with the die bonding film of the band cutting blade of thermosetting die bonding film on cutting blade, the thermal conductivity that it is more than 75 % by weight that described thermosetting die bonding film contains relative to thermosetting die bonding film entirety is the thermal conductive particle of more than 12W/mK, and the thermal conductivity of this thermosetting die bonding film after thermofixation is more than 1W/mK;

By former semiconductor chip together with aforementioned thermosetting die bonding film from the pickup process that the die bonding film of aforementioned strip cutting blade picks up;

Clip aforementioned thermosetting die bonding film, by former semiconductor chip chip join to the chip join operation on adherend; And

In addition, owing to being laminated with thermosetting die bonding film in advance on cutting blade, therefore, it is possible to be omitted in operation cutting blade attaching thermosetting die bonding film.

Accompanying drawing explanation

Fig. 1 is the diagrammatic cross-section of the die bonding film of the band cutting blade of expression first embodiment of the present invention.

Fig. 2 is the diagrammatic cross-section of the die bonding film of the band cutting blade of expression first other embodiment of the present invention.

Fig. 3 is the diagrammatic cross-section of a manufacture method of semiconductor device for illustration of present embodiment.

description of reference numerals

1 base material

2 binder layers

3,3 ' die bonding film (thermosetting die bonding film)

4 semiconductor crystal wafers

5 semi-conductor chips

6 adherends

7 bonding wires

8 potting resins

10, the die bonding film of 12 band cutting blades

11 cutting blades

Embodiment

(die bonding film of band cutting blade)

Below the thermosetting die bonding film (hereinafter also referred to " die bonding film ") of first embodiment of the present invention and the die bonding film of band cutting blade are described.The die bonding film of present embodiment can list: the die bonding film of the state of cutting blade of not fitting in the die bonding film of the band cutting blade of following explanation.Therefore, below the die bonding film of band cutting blade is described, is described wherein about die bonding film.Fig. 1 is the diagrammatic cross-section of the die bonding film of the band cutting blade of expression first embodiment of the present invention.Fig. 2 is the diagrammatic cross-section of the die bonding film of other band cutting blade of expression first other embodiment of the present invention.

As shown in Figure 1, the die bonding film 10 of cutting blade is with to possess the formation being laminated with thermosetting die bonding film 3 on cutting blade 11.Cutting blade 11 stacked binder layer 2 and forming on base material 1, die bonding film 3 is arranged on this binder layer 2.In addition, first invention can for the die bonding film 12 of band cutting blade as shown in Figure 2 like that, be only formed with the formation of die bonding film 3 ' in workpiece attaching part.

Aforementioned substrates 1 has UV transmissive, and becomes the strength substrate of the die bonding film 10,12 of band cutting blade.Include, for example out the polyolefine such as Low Density Polyethylene, straight-chain polyethylene, medium-density polyethylene, high density polyethylene(HDPE), ultra-low density polyethylene, atactic copolymerized polypropene, block copolymerization polypropylene, homo-polypropylene, polybutene, polymethylpentene; The polyester such as ethylene-vinyl acetate copolymer, ionomer resin, ethene-(methyl) acrylic copolymer, ethene-(methyl) acrylate (random, alternately) multipolymer, ethylene-butene copolymer, ethylene-hexene co-polymers, urethane, polyethylene terephthalate, PEN; Polycarbonate, polyimide, polyether-ether-ketone, polyimide, polyetherimide, polymeric amide, fully aromatic polyamide, polyphenylene sulfide, aramid fiber (paper), glass, woven fiber glass, fluoro-resin, polyvinyl chloride, polyvinylidene dichloride, cellulose-based resin, silicone resin, metal (paper tinsel), paper etc.

In addition, as the material of base material 1, the polymkeric substance such as the crosslinked of aforementioned resin can be listed.Foregoing plastics film can use on tensionless winkler foundation ground, also can use the plastics film of the stretch processing implementing single shaft or twin shaft as required.If utilize the resin sheet being imparted heat-shrinkable by stretch processing etc., reducing binder layer 2 and the bond area of die bonding film 3,3 ' by making this base material 1 thermal contraction after dicing, the facilitation of the recovery of semi-conductor chip can be realized.

In order to improve and the adaptation of adjacent layer, retentivity etc., usual surface treatment can be implemented in the surface of base material 1, chemical treatment or the physical treatments such as such as chromic acid process, ozone exposure, fire exposure, high-voltage electric shock exposure, ionizing radiation process; Utilize the coating process of silane coupling agent (such as adhesive substance described later).Aforementioned substrates 1 can base material that suitably choice for use is of the same race or not of the same race, and can use as required blendedly has several and the base material obtained.

The thickness of base material 1 is not particularly limited, can suitably determines, be generally about 5 ~ 200 μm.

As the tackiness agent for the formation of binder layer 2, be not particularly limited, such as, can use the common pressure-sensitive adhesive such as acrylic adhesives, rubber adhesive.As aforementioned pressure-sensitive adhesive, that is afraid of from semiconductor crystal wafer, glass etc. the electronic unit polluted utilizes the aspects such as the clean cleaning of the organic solvent such as ultrapure water, alcohol, the preferably acrylic adhesives of polymkeric substance based on acrylic polymers.

As foregoing acrylic polymkeric substance, include, for example out: by (methyl) alkyl acrylate (such as methyl esters, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, secondary butyl ester, the tert-butyl ester, pentyl ester, isopentyl ester, own ester, heptyl ester, monooctyl ester, 2-ethylhexyl, different monooctyl ester, the ninth of the ten Heavenly Stems ester, the last of the ten Heavenly stems ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, cetyl ester, stearyl, the carbon number 1 ~ 30 of the alkyl such as eicosyl ester, especially the straight-chain of carbon number 4 ~ 18 or the alkyl ester etc. of branched) and (methyl) acrylate base ester (such as ring pentyl ester, cyclohexyl etc.) in a kind or two or more be used as the acrylic polymers etc. of monomer component.It should be noted that, (methyl) acrylate refers to acrylate and/or methacrylic ester, and first (methyl) of the present invention is all identical meaning.

For the object of the modification such as force of cohesion, thermotolerance, foregoing acrylic polymkeric substance can comprise as required correspond to can with the unit of other monomer component of aforementioned (methyl) alkyl acrylate or cycloalkyl ester copolymerization.As such monomer component, include, for example out the carboxylic monomers such as vinylformic acid, methacrylic acid, (methyl) carboxyethyl acrylates, (methyl) vinylformic acid carboxyl pentyl ester, methylene-succinic acid, toxilic acid, fumaric acid, β-crotonic acid; The anhydride monomers such as maleic anhydride, itaconic anhydride; The monomer of the hydroxyls such as (methyl) 2-Hydroxy ethyl acrylate, (methyl) 2-hydroxypropyl acrylate, (methyl) vinylformic acid-4-hydroxybutyl, the own ester of (methyl) vinylformic acid-6-hydroxyl, (methyl) vinylformic acid-8-hydroxyl monooctyl ester, (methyl) vinylformic acid-10-hydroxyl ester in the last of the ten Heavenly stems, (methyl) vinylformic acid-12-hydroxylauric ester, (methyl) vinylformic acid (4-Hydroxymethyl-cyclo-hexyl) methyl esters; Styrene sulfonic acid, allyl sulphonic acid, 2-(methyl) acrylamide-2-methyl propane sulfonic, (methyl) acrylamide propane sulfonic acid, (methyl) sulfopropyl acrylate, (methyl) propane sulfonic acid etc. are containing sulfonic monomer; The monomer of the phosphorous acidic groups such as 2-hydroxyethyl acryloyl phosphoric acid ester; Acrylamide, vinyl cyanide etc.These monomer component of copolymerization can use a kind or two or more.These can copolymerization monomer consumption be preferably whole monomer component less than 40 % by weight.

And then foregoing acrylic polymkeric substance, in order to be cross-linked, also can comprise multi-functional monomer etc. as required as comonomer composition.As so multi-functional monomer, include, for example out hexylene glycol two (methyl) acrylate, (gathering) ethylene glycol bisthioglycolate (methyl) acrylate, (gathering) propylene glycol two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, tetramethylolmethane two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylolmethane three (methyl) acrylate, Dipentaerythritol six (methyl) acrylate, epoxy (methyl) acrylate, polyester (methyl) acrylate, carbamate (methyl) acrylate etc.These multi-functional monomers also can use a kind or two or more.From aspects such as adhesion characteristics, the consumption of multi-functional monomer is preferably less than 30 % by weight of whole monomer component.

Foregoing acrylic polymkeric substance can by making single monomer or two or more polymerize monomer mixtures and obtaining.Polymerization also can be carried out with any-modes such as solution polymerization, letex polymerization, mass polymerization, suspension polymerizations.From the aspect prevented the pollution of clean adherend etc., the content of preferred low molecular weight substance is few.From this starting point, the number-average molecular weight of acrylic polymers be preferably more than 100,000, more preferably 200,000 ~ about 3,000,000, be particularly preferably 300,000 ~ about 1,000,000.

In addition, in aforementioned adhesion agent, in order to the number-average molecular weight of the acrylic polymers etc. of polymkeric substance based on improving, also suitably can adopt external crosslinker.As the concrete means of outside cross-linking method, can list: add the so-called linking agents such as polyisocyanate compound, epoxy compounds, aziridine cpd, melamine series linking agent and the method making it react.When using external crosslinker, its consumption according to it with the balance of base polymer that will be cross-linked and then suitably determine according to the use as tackiness agent.Usually preferably, relative to aforementioned substrates polymkeric substance 100 weight part, following and then 0.1 ~ 5 weight part about compounding 5 weight parts.And then, in tackiness agent, as required, except aforesaid ingredients, also can use the additives such as known various tackifiers, anti-aging agent.

Binder layer 2 can utilize radiation-curing type tackiness agent to be formed.Radiation-curing type tackiness agent can make degree of crosslinking increase, its bounding force is easily reduced by radioactive rays such as irradiation ultraviolet radiations, by attaching the corresponding part 2a of part with workpiece and irradiate radioactive rays only to the binder layer 2 shown in Fig. 2, the difference with the bounding force of other parts 2b can be set.

In addition, by the die bonding film 3 ' according to Fig. 2, the binder layer 2 of radiation-curing type is cured, easily can forms the significantly reduced preceding sections 2a of bounding force.Because die bonding film 3 ' is attached to solidification and the preceding sections 2a place of bounding force reduction, therefore the preceding sections 2a of binder layer 2 and the interface of die bonding film 3 ' possess the character can easily peeled off when picking up.On the other hand, the part of not irradiating radioactive rays has sufficient bounding force, forms preceding sections 2b.It should be noted that, to binder layer irradiate radioactive rays can after dicing and pickup before carry out.

As previously mentioned, in the binder layer 2 of the die bonding film 10 of the band cutting blade shown in Fig. 1, the preceding sections 2b formed by uncured radiation-curing type tackiness agent and die bonding film 3 bond, and can guarantee confining force when cutting.Like this, radiation-curing type tackiness agent bonding/balance of peeling off can support die bonding film 3 for being fixed on by shaped like chips workpiece (semi-conductor chip etc.) on the adherends such as substrate well.In the binder layer 2 of the die bonding film 11 of the band cutting blade shown in Fig. 2, preceding sections 2b can fix wafer central.

As long as radiation-curing type tackiness agent has the functional group of the radiation-curables such as carbon-to-carbon double bond and shows binding property, just can use without particular limitation.As radiation-curing type tackiness agent, such as, can exemplify the monomer component of compounding radiation-curable, the addition type radiation-curing type tackiness agent of oligopolymer composition in the common pressure-sensitive adhesives such as foregoing acrylic tackiness agent, rubber adhesive.

As the monomer component of compounding radiation-curable, include, for example out oligourethane, carbamate (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylol methane four (methyl) acrylate, tetramethylolmethane three (methyl) acrylate, tetramethylolmethane four (methyl) acrylate, Dipentaerythritol monohydroxy five (methyl) acrylate, Dipentaerythritol six (methyl) acrylate, BDO two (methyl) acrylate etc.In addition, the oligopolymer composition of radiation-curable can list the various oligopolymer such as carbamate system, polyethers system, Polyester, polycarbonate-based, polyhutadiene system, and its molecular weight is suitable in the scope of about 100 ~ 30000.The monomer component of radiation-curable, the compounding amount of oligopolymer composition suitably can determine the amount of the bounding force that can reduce binder layer according to the kind of aforementioned adhesion oxidant layer.Usually, relative to base polymer 100 weight part such as acrylic polymers forming tackiness agent, be such as 5 ~ 500 weight parts, be preferably 40 ~ 150 weight parts about.

In addition, as radiation-curing type tackiness agent, except the addition type radiation-curing type tackiness agent of aforementioned explanation, also can list and employ in polymer lateral chain or main chain or based on the polymkeric substance that main chain terminal has carbon-to-carbon double bond in polymkeric substance at type radiation-curing type tackiness agent.Inherent type radiation-curing type tackiness agent do not need containing or not in a large number containing the oligopolymer composition etc. belonging to low molecular composition, therefore, oligopolymer composition etc. can not through time ground move within the adhesive layer, can the constitutionally stable binder layer of form layers, so preferably.

The aforementioned base polymer with carbon-to-carbon double bond can use without particular limitation to be had carbon-to-carbon double bond and has fusible polymkeric substance.As such base polymer, preferably using acrylic polymers as basic framework.As the basic framework of acrylic polymers, the acrylic polymers shown in previous example can be listed.

The method importing carbon-to-carbon double bond in subtend foregoing acrylic polymkeric substance is not particularly limited, and can adopt various method, from the viewpoint of molecular designing, it is easy for carbon-to-carbon double bond being imported polymer lateral chain.Include, for example out following method: make acrylic polymers carry out copolymerization with the monomer with functional group in advance, then make to have and can carry out the method for polycondensation or addition reaction with the compound of the functional group of this functional group reactions and carbon-to-carbon double bond under the state of radiation-curable maintaining carbon-to-carbon double bond.

As the example of the combination of these functional groups, carboxylic acid group and epoxy group(ing), carboxylic acid group and '-aziridino, hydroxyl and isocyanate group etc. can be listed.Among the combination of these functional groups, from the easy degree of following response, the combination of hydroxyl and isocyanate group is suitable.In addition, as long as generate the such combination of the acrylic polymers with aforementioned carbon-to-carbon double bond by the combination of these functional groups, then functional group can either side in acrylic polymers and aforesaid compound, but in aforesaid preferably combination, acrylic polymers has hydroxyl and the situation that aforesaid compound has isocyanate group is suitable.Now, as the isocyanate compound with carbon-to-carbon double bond, include, for example out methacryloyl isocyanate, 2-methacryloxyethyl isocyanic ester, a pseudoallyl-alpha, alpha-dimethylbenzyl isocyanic ester etc.In addition, as acrylic polymers, can use the polymkeric substance of the copolymerization such as the ether based compound of the monomer of aforementioned illustrative hydroxyl, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl base ether.

Aforementioned inherent type radiation-curing type tackiness agent can be used alone the aforementioned base polymer (especially acrylic polymers) with carbon-to-carbon double bond, also can under the degree that can not make characteristic degradation monomer component, the oligopolymer composition of compounding aforementioned radiation-curable.The oligopolymer compositions of radiation-curable etc. are usual is in the scope of 30 weight parts relative to base polymer 100 weight part, is preferably in the scope of 0 ~ 10 weight part.

Aforementioned radiation-curing type tackiness agent contains Photoepolymerizationinitiater initiater when utilizing ultraviolet etc. to be cured.As Photoepolymerizationinitiater initiater, include, for example out the α-one alcohol based compounds such as 4-(2-hydroxyl-oxethyl) phenyl (2-hydroxyl-2-propyl group) ketone, Alpha-hydroxy-α, α '-dimethyl acetophenone, 2-methyl-2-hydroxypropiophenonepreparation, 1-hydroxycyclohexylphenylketone; The methyl phenyl ketone based compounds such as methoxyacetophenone, 2,2-dimethoxy-2-phenyl acetophenone, 2,2-diethoxy acetophenones, 2-methyl isophthalic acid-[4-(methylthio group)-phenyl]-2-morpholino propane-1-ketone; The benzoin ether based compounds such as benzoin ethyl ether, benzoin isopropyl ether, anisoin methyl ether; The ketal based compounds such as benzyl dimethyl ketal; The aromatic sulfonyl based compounds such as 2-naphthalic sulfonic chloride; The photolytic activity oxime compounds such as 1-benzophenone-1,1-propylene glycol-2-(O-ethoxy carbonyl) oxime; Benzophenone, benzoyl phenylformic acid, 3, the benzophenone based compounds such as 3 '-dimethyl-4-methoxy benzophenone; The thioxanthone based compounds such as thioxanthone, 2-chloro thioxanthone, 2-methyl thioxanthone, 2,4-dimethyl thioxanthone, isopropyl thioxanthone, 2,4-dichloro-thioxanthone, 2,4-diethyl thioxanthones, 2,4-diisopropylthioxanthone; Camphorquinone; Halogenated ketone; Acylphosphine oxide; Acyl phosphonate etc.The compounding amount of Photoepolymerizationinitiater initiater relative to base polymer 100 weight part such as acrylic polymers forming tackiness agent, such as, is about 0.05 ~ 20 weight part.

In addition, as radiation-curing type tackiness agent, include, for example out disclosed in Japanese Laid-Open Patent Publication 60-196956 publication, containing the rubber adhesive, acrylic adhesives etc. with Photoepolymerizationinitiater initiaters such as photopolymerizable compound and carbonyl compound, organosulfur compound, superoxide, amine, salt based compound such as the addition polymerization compound of more than 2 unsaturated link(age)s, the organoalkoxysilanes with epoxy group(ing).

In the binder layer 2 of aforementioned radiation-curing type, as required, also can containing utilizing radiation exposure and painted compound.Radiation exposure is utilized and painted compound, the colored parts that only can will carry out radiation exposure by comprising in binder layer 2.That is, can by painted for the part 2a attaching part 3a corresponding with workpiece shown in Fig. 1.Therefore, it is possible to carried out radiation exposure by visual directly judging whether to binder layer 2, easily identify that workpiece attaches part 3a, workpiece of easily fitting.In addition, when utilizing optical sensor etc. to detect semi-conductor chip, its accuracy of detection improves, and can not produce mishandle when the pickup of semi-conductor chip.

Utilize radiation exposure and painted compound is colourless or light before irradiating radioactive rays, become coloured compound by radiation exposure.As the preferred concrete example of this compound, leuco dye can be listed.As leuco dye, preferably use usual triphenyl methane system, fluorane system, thiodiphenylamine system, auramine system, spiro-pyrans system.Specifically, 3-[N-(p-methylphenyl is amino)]-7-anilino fluorane, 3-[N-(p-methylphenyl)-N-methylamino]-7-anilino fluorane, 3-[N-(p-methylphenyl)-N-ethylamino]-7-anilino fluorane, 3-diethylamino-6-methyl-7-anilino fluorane, crystal violet lactone, 4 can be listed, 4 '; 4 "-three (dimethylamino) triphenylcarbinol, 4,4 ', 4 "-three (dimethylamino) triphenyl methane etc.

As the developer that preferred and these leuco dyes use jointly, the electron acceptor(EA) such as initial polymer, aromatic derivant carboxylate, atlapulgite of the resol used since can listing in the past, and then, when making tonal variation, various known developer also can be combinationally used.

Like this utilize radiation exposure and painted compound is included in radiation-curing type tackiness agent after temporarily can being dissolved in organic solvent etc., or also can make micronized and comprise in the adhesive.It is desirable that the usage rate of this compound is less than 10 % by weight, is preferably 0.01 ~ 10 % by weight, more preferably 0.5 ~ 5 % by weight in binder layer 2.When the ratio of this compound is more than 10 % by weight, to binder layer 2 irradiate radioactive rays by this compound taken in excess, therefore the solidification of the preceding sections 2a of binder layer 2 becomes insufficient, and bounding force can not reduce fully sometimes.On the other hand, in order to make it painted fully, the ratio of this compound is preferably made to be more than 0.01 % by weight.

When utilizing radiation-curing type tackiness agent to form binder layer 2, radioactive rays can be irradiated according to the mode of the bounding force of the bounding force < other parts 2b of the preceding sections 2a made in binder layer 2 to a part for binder layer 2.

As the method forming preceding sections 2a in aforementioned adhesion oxidant layer 2, can list: form the binder layer 2 of radiation-curing type on support base material 1 after, the method making it solidify to preceding sections 2a partial irradiation radioactive rays.The radiation exposure of local can carry out across being formed the photomask attaching the corresponding pattern such as part 3b beyond part 3a with workpiece.In addition, point-like (spot) can be listed irradiation ultraviolet radiation and the method etc. making it solidify.The formation of the binder layer 2 of radiation-curing type can be undertaken by being transferred on support base material 1 by the binder layer be arranged on barrier film 2.The radiation-curing of local also can carry out the binder layer 2 of the radiation-curing type be arranged on barrier film.

In addition, when utilizing radiation-curing type tackiness agent to form binder layer 2, use at least one side of support base material 1, carried out the support base material 1 of shading except all or part of attaching part except the corresponding part of part 3a with workpiece, after the binder layer 2 forming radiation-curing type, radioactive rays are irradiated to it, make to attach with workpiece corresponding partially cured of part 3a, thus the preceding sections 2a that bounding force reduces can be formed.As light screening material, can be undertaken by the material that can become photomask in support film printing, evaporation etc. makes.According to this manufacture method, the die bonding film 10 of the first band cutting blade of the present invention can be manufactured efficiently.

It should be noted that, when irradiating radioactive rays, when the solidification occurring to cause because of oxygen hinders, it is desirable that with the surperficial starvation (air) someway from the binder layer 2 of radiation-curing type.Include, for example out: the method that the surface barrier film of aforementioned adhesion oxidant layer 2 is covered, the method etc. of carrying out the irradiation of the radioactive rays such as ultraviolet in nitrogen atmosphere.

The thickness of binder layer 2 is not particularly limited, from the viewpoint of the property taken into account etc. of fixing maintenance preventing the defect of chip cut surface, adhesive linkage, is preferably about 1 ~ 50 μm.Be preferably 2 ~ 30 μm, more preferably 5 ~ 25 μm.

The thermal conductivity of die bonding film 3,3 ' after thermofixation is more than 1W/mK, is preferably more than 1.2W/mK, is more preferably more than 1.5W/mK.Because the thermal conductivity after thermofixation is more than 1W/mK, the thermal diffusivity of the semiconductor device therefore using die bonding film 3,3 ' to manufacture is excellent.It should be noted that, the thermal conductivity of die bonding film 3,3 ' after thermofixation is more high more preferred, but is such as below 20W/mK.

In first invention, " thermal conductivity after thermofixation " refers to 130 DEG C of heating 1 hour, then with the thermal conductivity of 175 DEG C of heating after 5 hours.In addition, " die bonding film after thermofixation " refer to by play from the state (making the state after die bonding film) before thermofixation the heat of reaction produced till thermofixation terminates completely be designated as 100% time, playing from the state of " die bonding film after thermofixation " heat of reaction produced till thermofixation terminates completely is the film of less than 5%.It should be noted that, above-mentioned heat of reaction uses the value obtained by means of differential scanning calorimetry mensuration (DSC).

In addition, die bonding film 3,3 ' at 130 DEG C with 50 seconds ^-1shearing rate measure melt viscosity be below 200Pas, preferably in the scope of 1 ~ 200Pas, more preferably in the scope of 20 ~ 185Pas.Due at 130 DEG C with 50 seconds ^-1shearing rate measure melt viscosity, namely the high speed shear of 130 DEG C time melt viscosity be below 200Pas, therefore, by die bonding film 3,3 ' being attached at pressure during adherend, the viscosity of thermosetting die bonding film reduces.Therefore, it is possible to follow concavo-convex, the generation that can suppress space of the adherends such as printed circuit board (PCB) fully.

In addition, die bonding film 3,3 ' was with shearing rate 5 seconds ^-1melt viscosity at 130 DEG C that measure is in the scope of 10Pas ~ 300Pas scope that is interior, preferably 20Pas ~ 280Pas, is more preferably in the scope of 50Pas ~ 250Pas.Due to 5 seconds ^-1shearing rate measure 130 DEG C at melt viscosity in the scope of 10Pas ~ 300Pas, therefore maintain the shape of film and viscosity is lower.Therefore, it is possible to follow concavo-convex, the generation that can suppress space of the adherends such as printed circuit board (PCB) fully.

In addition, die bonding film 3,3 ' containing be more than 75 % by weight relative to thermosetting die bonding film entirety, preferably containing more than 80 % by weight, the thermal conductivity that more preferably contains more than 85 % by weight is the thermal conductive particle of more than 12W/mK.In addition, the content of aforementioned thermal conductive particle is more much more preferred, but from the view point of masking, such as, is less than 93 % by weight.Owing to being the thermal conductive particle of more than 12W/mK containing the thermal conductivity being more than 75 % by weight relative to thermosetting die bonding film entirety, the thermal diffusivity of the semiconductor device therefore using this thermosetting die bonding film to manufacture is more excellent.It should be noted that, the crystalline structure of the thermal conductive particle that the thermal conductivity of thermal conductive particle can obtain by utilizing x ray structure analysis is inferred.

Aforementioned thermal conductive particle is preferably selected from by alumina particle (thermal conductivity: 36W/mK), Zinc oxide particles (thermal conductivity: 54W/mK), aluminum nitride particle (thermal conductivity: 150W/mK), silicon nitride particle (thermal conductivity: 27W/mK), silicon-carbide particle (thermal conductivity: 200W/mK), magnesium oxide particle (thermal conductivity: 59W/mK), and at least a kind of particle in the group that forms of boron nitride particle (thermal conductivity: 60W/mK).Especially aluminum oxide is high thermal conductivity coefficient, from the viewpoint of dispersed, what obtain easiness is preferred.In addition, boron nitride, owing to having higher thermal conductivity, therefore can use aptly.

Thermal conductive particle preferably utilizes silane coupling agent to carry out processing (pre-treatment).Thus, the dispersiveness of thermal conductive particle becomes well, can make thermal conductive particle filling in a large number.

As silane coupling agent, preferably comprise the silane coupling agent of Siliciumatom, hydrolization group and organo-functional group.

Hydrolization group is bonded to Siliciumatom.

As hydrolization group, include, for example out methoxyl group, oxyethyl group etc.Wherein, the reason of fast from hydrolysis rate, easy process and so on, is preferably methoxyl group.

Even if from carrying out crosslinked with thermal conductive particle and silane coupling agent is cross-linked to each other and the cross-linking set on thermal conductive particle surface also can carry out surface-treated aspect with silane coupling agent to thermal conductive particle entirety less, the quantity of the hydrolization group in silane coupling agent is preferably 2 ~ 3, is more preferably 3.

Organo-functional group is bonded to Siliciumatom.

As organo-functional group, include, for example out the organo-functional group comprising acryl, methacryloyl, epoxy group(ing), phenyl amino etc.Wherein, owing to not having reactivity, the storage stability of thermal conductive particle that processes good with epoxy resin, therefore preferred acryl.

It should be noted that, during owing to having with the functional group that the reactivity of epoxy group(ing) is high, can react with epoxy resin, therefore storage stability, mobility reduce.From the aspect suppressing mobility to reduce, as organo-functional group, preferably not containing primary amino, sulfydryl or isocyanate group.

The quantity of the organo-functional group in silane coupling agent is preferably 1.Because Siliciumatom forms four keys, when therefore organo-functional group is many, the quantity of hydrolysising group can be not enough.

Silane coupling agent can comprise the alkyl with silicon atom bonding further.By making silane coupling agent comprise alkyl, can make reactive lower than methacryloyl, the surface-treated deviation caused by reaction sharply can be prevented.As alkyl, methyl, dimethyl etc. can be listed.Wherein, methyl is preferably.

As silane coupling agent, specifically, 2-(3 can be listed, 4-epoxycyclohexyl) ethyl trimethoxy silane, 3-glycidoxypropyltrime,hoxysilane, 3-glycidoxypropyl group triethoxyl silane, 3-glycidoxypropyl dimethoxysilane, 3-glycidoxypropyl diethoxy silane, dimethyldimethoxysil,ne, dimethyldiethoxysilane, methyltrimethoxy silane, Union carbide A-162, phenyltrimethoxysila,e, phenyl triethoxysilane, N-phenyl-3-TSL 8330, 3-methacryloyloxypropyl methyl dimethoxysilane, 3-methacryloxypropyl trimethoxy silane, 3-methacryloyloxypropyl methyl diethoxy silane, 3-methacryloxypropyl etc.

As utilizing silane coupling agent to process the method for thermal conductive particle, be not particularly limited, can list: the wet method of thermal conductive particle and silane coupling agent being carried out mixing in a solvent, in the gas phase to the dry method etc. that thermal conductive particle and silane coupling agent process.

The treatment capacity of silane coupling agent is not particularly limited, preferably, relative to thermal conductive particle 100 weight part, the silane coupling agent of process 0.05 ~ 5 weight part.

As the shape of aforementioned thermal conductive particle, be not particularly limited, such as, can use sheet (flake), needle-like, thread, spherical, lepidiod particle, dispersed, filling ratio, preferably spherical from the viewpoint of improving.

The median size of aforementioned thermal conductive particle be preferably more than 1 μm and less than 10 μm, be more preferably more than 1.5 μm and less than 8 μm.By making the median size of aforementioned thermal conductive particle be more than 1 μm, the wettability of thermosetting die bonding film to adherend can be guaranteed, making it play good cementability.In addition, by making the median size of aforementioned thermal conductive particle be less than 10 μm, the effect that thermal conductivity improves by adding thermal conductive particle can be made better.In addition, by making the median size of aforementioned thermal conductive particle within the scope of aforementioned value, can the thickness of thinning thermosetting die bonding film, and then semi-conductor chip high level can be made to dissolve, and can prevent from giving prominence to from thermosetting die bonding film due to thermal conductive particle and causing the generation of die crack.It should be noted that, the median size of thermal conductive particle is the size-grade distribution meter (HORIBA, LTD. system, the device name that utilize luminosity formula; LA-910) value obtained.

In addition, as aforementioned thermal conductive particle, the two or more thermal conductive particles that median size is different can be used.This is because, by using the two or more thermal conductive particles that median size is different, easily filling ratio can be improved.

The stepped construction of die bonding film 3,3 ' is not particularly limited, include, for example out: the structure only formed by bond layer individual layer, be formed with the multilayered structure etc. of bond layer in the one or two sides of core material.As aforementioned core material, resin substrate, silicon substrate or the glass substrate etc. of film (such as Kapton, polyester film, pet film, PEN film, polycarbonate film etc.) can be listed, strengthening with glass fibre, plastics non-woven fibre.

Die bonding film 3,3 ' preferably comprises the resinous principle such as thermoplastic resin, thermosetting resin.

As foregoing thermosetting resins, resol, aminoresin, unsaturated polyester resin, epoxy resin, urethane resin, silicone resin or thermoset polyimide resin etc. can be listed.These resins can be used alone or are used in combination of two or more.Be particularly preferably the epoxy resin that ionic impurity comprising corrosion resistant semiconductor chip etc. is less.In addition, as the solidifying agent of epoxy resin, be preferably resol.

As long as aforementioned epoxy resins as chip join purposes caking agent and normally used resin is just not particularly limited, such as can use difunctional epoxy resin, the polyfunctional epoxy resin such as bisphenol A-type, bisphenol-f type, bisphenol S type, bmminated bisphenol-A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorenes type, phenol novolak type, ortho cresol novolak type, trihydroxybenzene methylmethane type, four (phenyl hydroxyl) ethane (Tetraphenylolethane) type; Or the epoxy resin such as glycolylurea type, triglycidyl group isocyanuric acid ester type or glycidic amine type.They can be used alone or are used in combination of two or more.Among these epoxy resin, be particularly preferably phenolic resin varnish type epoxy resin, biphenyl type epoxy resin, trihydroxybenzene methylmethane type resin or tetraphenyl ethane type epoxy resin.This is because these epoxy resin are rich in the reactivity with the resol as solidifying agent, the excellences such as thermotolerance.

In addition, aforementioned epoxy resins can combinationally use under room temperature (23 DEG C) in solid-state resin and the resin these two kinds be in a liquid state under room temperature (23 DEG C).By at room temperature adding in solid-state epoxy resin the epoxy resin be at room temperature in a liquid state, vulnerability when forming film can be improved, can operability be improved.

And then, aforementioned resol as aforementioned epoxy resins solidifying agent and work, include, for example out the novolak phenolics such as phenol resol resins, phenol aralkyl resin, cresol novolac resin, t-butylphenol novolac resin, nonylphenol novolac resin; First rank novolac type phenolic resin, poly-to polyoxy vinylbenzene etc. such as oxygen vinylbenzene.They can be used alone, or are used in combination of two or more.Among these resol, particularly preferably phenol resol resins, phenol aralkyl resin.This is because the connection reliability of semiconductor device can be improved.

Among foregoing thermosetting resins (such as epoxy resin, resol), apply low velocity shear stress (such as 5 seconds from being reduced in ^-1shearing rate) under the viewpoint of the melt viscosity of thermosetting die bonding film at 130 DEG C set out, preferred softening temperature is the resin of less than 100 DEG C.

In addition, among foregoing thermosetting resins (such as epoxy resin, resol), the resin be in a liquid state under preferably being contained in room temperature.During containing multiple thermosetting resin, at least one thermosetting resin is at room temperature in a liquid state.When foregoing thermosetting resins comprises the resin be at room temperature in a liquid state, the concavo-convex of adherend can be followed more fully, the generation in space can be suppressed.

It should be noted that, the softening temperature of epoxy resin can be measured by the ring and ball method specified in JIS K7234-1986.In addition, the softening temperature of resol can be measured by the ring and ball method specified in JIS K6910-2007.

About the compounding ratio of aforementioned epoxy resins and resol, such as, desirably, carry out compounding with the hydroxyl in resol relative to the mode that epoxy group(ing) 1 equivalent in aforementioned epoxy resins composition is 0.5 ~ 2.0 equivalent.Be preferably 0.8 ~ 1.2 equivalent.That is, this is because, when both compounding ratios depart from aforementioned range, can not carry out sufficient curing reaction, the characteristic of epoxy resin cured product is easily deteriorated.

As aforementioned thermoplastic resin, the saturated polyester resin such as polyamide resin, phenoxy resin, acrylic resin, PET, PBT, polyamide-imide resin or the fluoro-resin etc. such as natural rubber, isoprene-isobutylene rubber, synthetic polyisoprene, neoprene, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutadiene, polycarbonate resin, thermoplastic polyimide resin, 6-nylon, 6,6-nylon can be listed.These thermoplastic resins can be used alone, or are used in combination of two or more.Among these thermoplastic resins, particularly preferably ionic impurity is few, thermotolerance is high, can guarantee the acrylic resin of the reliability of semi-conductor chip.

As foregoing acrylic resin, being not particularly limited, a kind or the two or more polymkeric substance as composition (acrylic copolymer) etc. in the ester of the acrylic or methacrylic acid of the alkyl using having carbon number less than 30, the especially straight or branched of carbon number 4 ~ 18 can being listed.As aforesaid alkyl, include, for example out methyl, ethyl, propyl group, sec.-propyl, normal-butyl, the tertiary butyl, isobutyl-, amyl group, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl group, iso-octyl, nonyl, different nonyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, octadecyl or dodecyl etc.

In addition, as other monomer forming aforementioned polymer, be not particularly limited, include, for example out the carboxylic monomer of vinylformic acid, methacrylic acid, carboxyethyl acrylates, vinylformic acid carboxyl pentyl ester, methylene-succinic acid, toxilic acid, fumaric acid or β-crotonic acid etc. and so on; The anhydride monomers of maleic anhydride or itaconic anhydride etc. and so on; The monomer of the hydroxyl of (methyl) 2-Hydroxy ethyl acrylate, (methyl) 2-hydroxypropyl acrylate, (methyl) vinylformic acid-4-hydroxybutyl, the own ester of (methyl) vinylformic acid-6-hydroxyl, (methyl) vinylformic acid-8-hydroxyl monooctyl ester, (methyl) vinylformic acid-10-hydroxyl ester in the last of the ten Heavenly stems, (methyl) vinylformic acid-12-hydroxylauric ester or methacrylic acid (4-Hydroxymethyl-cyclo-hexyl) methyl esters etc. and so on; Styrene sulfonic acid, allyl sulphonic acid, 2-(methyl) acrylamide-2-methyl propane sulfonic, (methyl) acrylamide propane sulfonic acid, sulfapropyl (methyl) acrylate or (methyl) propane sulfonic acid etc. and so on containing sulfonic monomer; Or, the monomer of the phosphorous acidic group of 2-hydroxyethyl acryloyl phosphoric acid ester etc. and so on.

As the compounding ratio of foregoing thermosetting resins and aforementioned thermoplastic resin, by foregoing thermosetting resins containing weight part be designated as A, by aforementioned thermoplastic resin containing weight part be designated as B time, A/B is preferably more than 5, is more preferably more than 7, more preferably more than 9.It should be noted that, in this manual, the molecular weight of thermosetting resin is lower than 5000, and the molecular weight of thermoplastic resin is more than 5000.

The content of resinous principle is overall relative to die bonding film 3,3 ' is preferably more than 7 % by weight.The content of resinous principle is overall relative to die bonding film 3,3 ' is preferably less than 25 % by weight, be more preferably less than 20 % by weight, more preferably less than 15 % by weight.

As the compounding ratio of the thermosetting resin in resinous principle (total amount of thermosetting resin and thermoplastic resin), as long as during heating, die bonding film 3,3 ' can play the degree of the function as heat curing-type under prescribed conditions, just be not particularly limited, during in order to be reduced in the low velocity shear at 130 DEG C (5 seconds ^-1shearing rate) melt viscosity, be preferably 75 ~ 99 % by weight scope in, be more preferably in the scope of 85 ~ 98 % by weight.

In addition, as the compounding ratio of the thermoplastic resin in resinous principle, during in order to be reduced in the low velocity shear at 130 DEG C (5 seconds ^-1shearing rate) melt viscosity, be preferably 1 ~ 25 % by weight scope in, be more preferably in the scope of 2 ~ 15 % by weight.

Die bonding film 3,3 ' preferably comprises curing catalysts.Thereby, it is possible to promote the thermofixation of the solidifying agent such as epoxy resin and resol.As curing catalysts, be not particularly limited, include, for example out the phosphorus-boron system curing catalysts (being Hokko Chemical Industry Co., Ltd.'s system) such as tetraphenyl boron tetraphenylphosphoniphenolate (trade(brand)name: TPP-K), four (p-methylphenyl boron) tetraphenylphosphoniphenolate (trade(brand)name: TPP-MK), triphenylphosphine triphenylborane (trade(brand)name: TPP-S).Wherein, good from the view point of the excellent thus storage stability at room temperature of latent, be preferably four (p-methylphenyl boron) tetraphenylphosphoniphenolate.

The content of curing catalysts can suitably set, and relative to thermosetting resin 100 weight part, is preferably 0.1 ~ 3 weight part, is more preferably 0.5 ~ 2 weight part.

To carry out to a certain degree when making the first die bonding film 3,3 ' of the present invention in advance crosslinked, when making, adding the multi-functional compounds reacted with the functional group etc. of the molecule chain end of polymkeric substance in advance and being used as linking agent.Thereby, it is possible to improve adhesion properties at high temperature, realize the improvement of thermotolerance.

As aforementioned crosslinking agent, known linking agent can be adopted.Especially, the polyisocyanate compounds such as the affixture of tolylene diisocyanate, diphenylmethanediisocyanate, PPDI, 1,5-naphthalene diisocyanate, polyvalent alcohol and vulcabond are more preferably.As the addition of linking agent, relative to aforementioned polymer 100 weight part, be usually preferably 0.05 ~ 7 weight part.When the amount of linking agent is more than 7 weight part, bonding force can reduce, thus not preferred.On the other hand, when being less than 0.05 weight part, force of cohesion is not enough, thus not preferred.In addition, also can with such polyisocyanate compound together, as required and in the lump containing other multi-functional compounds such as epoxy resin.

In addition, in die bonding film 3,3 ', can suitable compounding filler except aforementioned thermal conductive particle according to its purposes.The compounding of aforementioned filler can adjustable elastic modulus etc.As aforementioned filler, mineral filler and organic filler can be listed.As aforementioned inorganic filler, be not particularly limited, include, for example out calcium carbonate, magnesiumcarbonate, Calucium Silicate powder, Magnesium Silicate q-agent, calcium oxide, aluminium borate whisker, crystalline silica, amorphous silica etc.They can be used alone or are used in combination of two or more.

It should be noted that, in die bonding film 3,3 ', except aforementioned filler, can also suitably other additive compounding as required.As other additive, include, for example out fire retardant, silane coupling agent or ion trap agent etc.As foregoing flame retardants, include, for example out ANTIMONY TRIOXIDE SB 203 99.8 PCT, antimony pentaoxide, brominated epoxy resin etc.They can be used alone or are used in combination of two or more.As aforementioned silane coupling agent, include, for example out β-(3,4-epoxycyclohexyl) ethyl trimethoxy silane, γ-glycidoxypropyltrime,hoxysilane, γ-glycidoxypropyl diethoxy silane etc.These compounds can be used alone or are used in combination of two or more.As foregoing ion trapping agent, include, for example out hydrotalcite, bismuth hydroxide etc.They can be used alone or are used in combination of two or more.

The thickness of die bonding film 3,3 ' (being total thickness when duplexer) is not particularly limited, from the view point of take into account prevent chip cut surface defect, based on adhesive linkage maintenance fix, be preferably 1 ~ 200 μm, be more preferably 3 ~ 100 μm, more preferably 5 ~ 80 μm.

Relative to base material 1, binder layer, die bonding film, for objects such as producing electrostatic, make semiconductor crystal wafer etc. charged thus and cause circuit destroyed when preventing it bonding and when peeling off etc., the die bonding film 10,12 of aforementioned strip cutting blade can be made to possess anti-static function.Give anti-static function to be undertaken by following suitable mode: the method for adding static inhibitor, conductive material in base material 1, binder layer 2, die bonding film 3,3 '; The conductive layer etc. be made up of charge transfer complex, metallic membrane etc. is set up to base material 1.In these modes, preferably not easily produce the mode of the foreign ion likely making semiconductor crystal wafer go bad.As the compounding conductive material (conductive filler material) for objects such as imparting electroconductibility, raising electroconductibility, can list: spherical, the metal powder of needle-like, sheet, amorphous carbon black, the graphite etc. of silver, aluminium, gold, copper, nickel, electroconductibility alloy etc.

The die bonding film 3,3 ' of the die bonding film 10,12 of aforementioned strip cutting blade is preferably subject to the protection (not shown) of barrier film.Barrier film has as protect IC bonding film 3,3 ' until the function of protecting materials for practicality.In addition, barrier film further can be used as to binder layer 2 transfer printing die bonding film 3,3 ' time support base material.Barrier film is stripped when die bonding film 3,3 ' the upper laminating workpiece of the die bonding film to band cutting blade.As barrier film, also can use polyethylene terephthalate (PET), polyethylene, polypropylene, utilize fluorine series stripping agent, plastics film, paper etc. that the stripper such as chain alkyl acrylate series stripping agent has carried out surface coated.

The die bonding film 10,12 of the band cutting blade of present embodiment such as can operate to make as follows.

First, base material 1 can utilize known film-forming method to carry out masking.As this film-forming method, such as, can exemplify calendering masking method, casting method in organic solvent, inflation extrusion molding, T die extrusion process, coetrusion, dry lamination method etc. in enclosed system.

Then, coating adhesive composition solution on base material 1 and after forming coated film, makes this coated film dry (making its heat cross-linking as required) under prescribed conditions, forms binder layer 2.Be not particularly limited as coating process, include, for example out roll coating, screen-printing deposition, rotogravure application etc.In addition, as drying conditions, such as, carry out in drying temperature 80 ~ 150 DEG C, the scope of 0.5 ~ 5 minute time of drying.In addition, also can on barrier film coating adhesive composition and after forming coated film, make coated film dry with aforementioned drying condition, form binder layer 2.Thereafter, binder layer 2 is fitted on base material 1 together with barrier film.Make cutting blade 11 thus.

Die bonding film 3,3 ' such as can operate to make as follows.

First, formation material and the adhesive composite of die bonding film 3,3 ' is made.In this adhesive composite, as mentioned above, compoundingly thermosetting resin, thermoplastic resin, thermal conductive particle and other various additives etc. are had as required.Usually, adhesive composite is to dissolve solution state in a solvent or dispersion dispersion liquid state in a solvent uses (following, also to comprise dispersion liquid state in solution state).

Then, adhesive composite solution is coated on base material barrier film in the mode becoming specific thickness, after forming coated film, makes this coated film dry under prescribed conditions, form bond layer.Be not particularly limited as coating process, include, for example out roll coating, screen-printing deposition, rotogravure application etc.In addition, as drying conditions, such as, carry out in drying temperature 70 ~ 160 DEG C, the scope of 1 ~ 5 minute time of drying.In addition, also can on barrier film coating adhesive composition solution and after forming coated film, make coated film dry with aforementioned drying condition, form bond layer.Thereafter, bond layer is fitted on base material barrier film together with barrier film.

Then, from cutting blade 11 and bond layer, peel off barrier film respectively, both fit by the mode becoming binding face with bond layer and binder layer.Laminating such as can be undertaken by crimping.Now, laminating temperature is not particularly limited, such as, is preferably 30 ~ 50 DEG C, is more preferably 35 ~ 45 DEG C.In addition, line pressure is not particularly limited, such as, is preferably 0.1 ~ 20kgf/cm, is more preferably 1 ~ 10kgf/cm.Then, the base material barrier film on bond layer is peeled off, obtains the die bonding film 10,12 of the band cutting blade of present embodiment.

(manufacture method of semiconductor device)

The manufacture method of the semiconductor device of present embodiment comprises following operation:

Prepare the operation of aforementioned thermosetting die bonding film; And

Clip aforementioned thermosetting die bonding film, by semi-conductor chip chip join to the chip join operation (hereinafter also referred to as the first embodiment) on adherend.

In addition, the manufacture method of the semiconductor device of present embodiment comprises following operation:

Clip aforementioned thermosetting die bonding film, by former semiconductor chip chip join to the chip join operation (hereinafter also referred to as the second embodiment) on adherend.

About the manufacture method of the semiconductor device of the first embodiment, manufacture method except the semiconductor device of the second embodiment employs the band die bonding film of cutting blade and the manufacture method of the semiconductor device of the first embodiment has been used alone except die bonding film this point difference, and other side is common.In the manufacture method of the semiconductor device of the first embodiment, if prepared, die bonding film is laggard is about to the operation that itself and cutting blade fit, then thereafter can be identical with the manufacture method of the semiconductor device of the second embodiment.Therefore, below the manufacture method of the semiconductor device of the second embodiment is described.

In the manufacture method of the semiconductor device of present embodiment, first, the die bonding film (preparatory process) of band cutting blade is prepared.Die bonding film 10,12 with cutting blade can be peeled off aptly at the upper barrier film arranged arbitrarily of die bonding film 3,3 ', and uses as follows.Below, limit is described for the situation of the die bonding film 10 employing band cutting blade with reference to Fig. 3 limit.

First, the semiconductor crystal wafer of the die bonding film 3 in the die bonding film 10 of band cutting blade attaches on part 3a and crimps semiconductor crystal wafer 4, makes its bonding maintenance and fixing (bonding process).The pressing means such as this operation lateral dominance crimping roller are undertaken by flanging.Attaching temperature time fixing is not particularly limited, such as, is preferably in the scope of 40 ~ 90 DEG C, is more preferably in the scope of 40 ~ 80 DEG C.In addition, laminate pressure time fixing is not particularly limited, from the view point of utilizing pressure to make the viscosity of die bonding film 3,3 ' reduce, is preferably in the scope of 0.01 ~ 1MPa, is more preferably in the scope of 0.1 ~ 0.5MPa.

Then, the cutting (cutting action) of semiconductor crystal wafer 4 is carried out.Thus, semiconductor crystal wafer 4 is cut into the size of regulation and singualtion, manufacture semi-conductor chip 5.The method of cutting is not particularly limited, such as, conventionally can carries out from the circuit face side of semiconductor crystal wafer 4.In addition, in this operation, such as can adopt carry out cutting until die bonding film 10 with cutting blade, be called as the cut-out mode etc. of entirely cutting (full cut).As the cutting unit used in this operation, be not particularly limited, known device can be used.In addition, semiconductor crystal wafer be adhesively fixed by the die bonding film 10 with cutting blade, therefore, it is possible to suppress chip defect, chip disperses, and can suppress the breakage of semiconductor crystal wafer 4.

Then, the pickup (pickup process) of semi-conductor chip 5 is carried out in order to be peeled off by the semi-conductor chip of the die bonding film 10 being bonded and fixed to band cutting blade.As the method for pickup, be not particularly limited, known various method can be adopted.Include, for example out: with pin from being with die bonding film 10 side of cutting blade by each semi-conductor chip 5 jack-up, and with pickup device pickup by the method etc. of the semi-conductor chip 5 of jack-up.

As pickup conditions, from the viewpoint preventing fragmentation, the jack-up speed of pin is preferably 5 ~ 100mm/ second, is more preferably 5 ~ 10mm/ second.

Herein, when binder layer 2 is ultraviolet hardening, picks up and carry out after to this binder layer 2 irradiation ultraviolet radiation.Thus, the bounding force of binder layer 2 pairs of die bonding films 3 reduces, and the stripping of semi-conductor chip 5 becomes easy.Its result, can carry out picking up and can not damaging semi-conductor chip 5.The conditions such as exposure intensity during uviolizing, irradiation time are not particularly limited, suitably carry out as required setting.In addition, as the light source for uviolizing, known light source can be used.It should be noted that, when making it solidify to binder layer irradiation ultraviolet radiation in advance and the binder layer that this be have cured and die bonding film are fitted, uviolizing is herein unwanted.

Then, picked up semi-conductor chip 5 is clipped die bonding film 3 and be bonded and fixed to adherend 6 (chip join operation).As adherend 6, the semi-conductor chip etc. that can list lead frame, TAB film, substrate or make separately.Adherend 6 can be such as hold yielding deformation type adherend, also can be the non-deformed type adherend (semiconductor crystal wafer etc.) being difficult to be out of shape.

As aforesaid base plate, known substrate can be used.In addition, as aforementioned lead frame, the organic substrate that the die-attach area such as Cu lead frame, 42 alloy lead wire frames, glass epoxy resin (glass-epoxy), BT (bismaleimide-triazine), polyimide etc. are made can be used.But first invention is not limited to this, also comprises and semi-conductor chip can be fixed and the circuit substrate carrying out being electrically connected with semi-conductor chip and use.

Then, because die bonding film 3 is heat curing-type, therefore by being heating and curing, semi-conductor chip 5 being bonded and fixed to adherend 6, making its high-temperature capability improve (heat curing processes).Can carry out at Heating temperature is 80 ~ 200 DEG C, be preferably 100 ~ 175 DEG C, be more preferably 100 ~ 140 DEG C.In addition, can be 0.1 ~ 24 littlely to carry out at present, be preferably 0.1 ~ 3 hour, be more preferably 0.2 ~ 1 hour in heat-up time.In addition, be heating and curing and can carry out under an increased pressure.As pressurized conditions, be preferably 1 ~ 20kg/cm ²scope in, be more preferably 3 ~ 15kg/cm ²scope in.Add being heating and curing of pressure such as to carry out in the chamber being filled with non-active gas.It should be noted that, clip die bonding film 3 and be adhesively fixed on substrate etc. semi-conductor chip 5 and the product obtained can be used in Reflow Soldering operation.

The shear bond power of the die bonding film 3 after thermofixation, relative to adherend 6, is preferably more than 0.2MPa, is more preferably 0.2 ~ 10MPa.If the shear bond power of die bonding film 3 is at least more than 0.2MPa, then when wire-bonded operation, can not because of the ultrasonic vibration in this operation, heating and produce shearing strain at die bonding film 3 and the bonding plane of semi-conductor chip 5 or adherend 6.That is, semi-conductor chip can not move because of ultrasonic vibration during wire-bonded, prevents the success ratio of wire-bonded from reducing thus.

Then, as required, as shown in Figure 3, the front end of the portion of terminal (inner lead) of adherend 6 is carried out being electrically connected (wire-bonded operation) with bonding wire 7 with the electrode pad (not shown) on semi-conductor chip 5.As aforementioned bonding wire 7, such as, can use gold thread, aluminum steel or copper cash etc.About temperature when carrying out wire-bonded, can for 80 ~ 250 DEG C, carry out in the scope that is preferably 80 ~ 220 DEG C.In addition, its heat-up time be several seconds ~ carry out under several minutes.Line connects can being heated to be under the state in foregoing temperature range by combinationally using carry out based on hyperacoustic vibrational energy with based on the crimping energy applying pressurization.This operation can not be carried out the thermofixation of die bonding film 3 and implement.

Then, as required, as shown in Figure 3, potting resin 8 is utilized to carry out packaged semiconductor 5 (packaging process).This operation is carried out to protect semi-conductor chip 5, the bonding wire 7 being equipped on adherend 6.Encapsulation resin forming can be undertaken by utilizing mould by this operation.As potting resin 8, such as, use the resin of epoxy.Heating temperature during resin package carried out for 60 ~ 90 seconds usually at 175 DEG C, but first invention is not limited to this, such as, can solidify several minutes at 165 ~ 185 DEG C.Thus, make potting resin solidify and clip die bonding film 3 semi-conductor chip 5 is fixed with adherend 6.That is, in first invention, even if when not carrying out after fixing operation described later, die bonding film 3 also can be utilized in this operation to be fixed, the manufacturing cycle reducing manufacturing process's quantity and shorten semiconductor device can be contributed to.In addition, in this packaging process, also can adopt the method (for example, referring to Japanese Unexamined Patent Publication 2013-7028 publication) embedding semi-conductor chip 5 in the encapsulation sheet of sheet.

Then, heat as required, the potting resin 8 of not fully solidification in aforementioned encapsulation operation is fully solidified (after fixing operation).Even if when packaging process chips bonding film 3 not completely thermofixation, this operation chips bonding film 3 also can with potting resin 8 together thermofixation completely.Heating temperature in this operation is different because of the kind of potting resin, such as, be that in the scope of 165 ~ 185 DEG C, heat-up time is 0.5 ~ 8 hours.

It should be noted that, the manufacture method of the semiconductor device of present embodiment also can be carried out as follows: after utilizing chip join operation to pre-fix, carry out wire-bonded and not via the heat curing processes of the heat treated based on die bonding film 3, and then encapsulated with potting resin by semi-conductor chip 5, and this potting resin is made to solidify (after fixing).Now, shear bond power during the pre-fixing of die bonding film 3 is preferably more than 0.2MPa relative to adherend 6, is more preferably 0.2 ~ 10MPa.If the shear bond power of die bonding film 3 when pre-fixing is at least more than 0.2MPa, even if then do not carry out wire-bonded operation via heating process, also can not because of the ultrasonic vibration in this operation, heating and produce shearing strain at die bonding film 3 and the bonding plane of semi-conductor chip 5 or adherend 6.That is, semi-conductor chip can not move because of ultrasonic vibration during wire-bonded, prevents the success ratio of wire-bonded from reducing thus.It should be noted that, pre-fix and refer to following state: in order to not impact follow-up operation, the degree (making semi-cured state) of the state that the curing reaction this die bonding film being cured to do not reach thermosetting die bonding film carries out completely and by state fixing for semi-conductor chip 5.It should be noted that, when carry out wire-bonded and heat curing processes not via the heat treated based on die bonding film, the operation of above-mentioned after fixing is equivalent to the heat curing processes in this specification sheets.

It should be noted that, the die bonding film of the first band cutting blade of the present invention is when by stacked for multiple semi-conductor chip and carry out also can using aptly three-dimensional is installed.Now, can between semi-conductor chip stacked die bonding film and spacer, also can between semi-conductor chip only stacked die bonding film and not stacked spacer, suitably can change according to manufacturing condition, purposes etc.

< second > of the present invention

Below, about second the present invention, itself and the first difference of the present invention are described.(following about the second thermosetting die bonding film of the present invention, also referred to as " die bonding film ") and band cutting blade die bonding film, as formation, characteristic except special instruction in this second item of the present invention, and the die bonding film of cutting blade can be with to play same formation, characteristic with the first die bonding film of the present invention.

(die bonding film of band cutting blade)

As the stacked formation of the die bonding film of the second band cutting blade of the present invention, can be identical with the die bonding film of the first band cutting blade of the present invention.

(cutting blade)

Formation, the characteristic of the second cutting blade of the present invention can be identical with the first cutting blade of the present invention (such as cutting blade 11).

(die bonding film)

The thermal conductivity of the second die bonding film of the present invention after thermofixation is more than 1W/mK, is preferably more than 1.2W/mK, is more preferably more than 1.5W/mK.Because the thermal conductivity after thermofixation is more than 1W/mK, the thermal diffusivity of the semiconductor device therefore using aforementioned die bonding film to manufacture is excellent.It should be noted that, the thermal conductivity after the thermofixation of aforementioned die bonding film is more high more preferred, but is such as below 20W/mK.

In second the present invention, " thermal conductivity after thermofixation " refers to 130 DEG C of heating 1 hour, then with the thermal conductivity of 175 DEG C of heating after 5 hours.In addition, " die bonding film after thermofixation " refers to, by play from the state (making the state after die bonding film) before thermofixation the heat of reaction produced till thermofixation terminates completely be designated as 100% time, the heat of reaction produced to thermofixation terminates completely from the state of " die bonding film after thermofixation " is the film of less than 5%.It should be noted that, above-mentioned heat of reaction uses the value obtained by means of differential scanning calorimetry mensuration (DSC).

In addition, the melt viscosity at 130 DEG C of aforementioned die bonding film be 10Pas ~ 300Pas scope in, be preferably in the scope of 20Pas ~ 280Pas, be more preferably in the scope of 50Pas ~ 250Pas.Because the melt viscosity at 130 DEG C is in the scope of 10Pas ~ 300Pas, therefore maintain the shape of film and viscosity is lower.Therefore, it is possible to follow concavo-convex, the generation that can suppress space of the adherends such as printed circuit board (PCB) fully.It should be noted that, in second the present invention, the melt viscosity at 130 DEG C refers to, as condition determination, shearing rate is set to 5 seconds ^-1and the value obtained.

Aforementioned die bonding film preferably containing the thermal conductivity that is more than 75 % by weight relative to thermosetting die bonding film entirety be more than 12W/mK thermal conductive particle, more preferably containing more than 80 % by weight, preferably contain more than 85 % by weight further.In addition, the content of aforementioned thermal conductive particle is more much more preferred, but from the view point of masking, such as, is less than 93 % by weight.If be the thermal conductive particle of more than 12W/mK containing the thermal conductivity being more than 75 % by weight relative to thermosetting die bonding film entirety, then the thermal diffusivity of the semiconductor device using this thermosetting die bonding film to manufacture is more excellent.It should be noted that, the thermal conductivity of thermal conductive particle can be inferred by the crystalline structure of the thermal conductive particle utilizing x ray structure analysis to obtain.

As aforementioned thermal conductive particle, the particle illustrated in the first item of the present invention can be used.

As the stepped construction of aforementioned die bonding film, in the same manner as inventing with first, include, for example out the structure only formed by bond layer individual layer, the multilayered structure etc. being formed with bond layer in the one or two sides of core material.

Aforementioned die bonding film preferably comprises the resinous principle such as thermoplastic resin, thermosetting resin.

As foregoing thermosetting resins, the resin (such as, epoxy resin, resol) illustrated in the first item of the present invention can be used.

Melt viscosity at 130 DEG C that can reduce thermosetting die bonding film, among aforementioned epoxy resins, preferred softening temperature is the resin of less than 100 DEG C.

It should be noted that, the softening temperature of epoxy resin can be measured by the ring and ball method specified in JIS K7234-1986.

In addition, the melt viscosity at 130 DEG C that can reduce thermosetting die bonding film, among aforementioned resol, preferred softening temperature is the resin of less than 100 DEG C.

It should be noted that, the softening temperature of resol can be measured by the ring and ball method specified in JIS K6910-2007.

The compounding ratio of aforementioned epoxy resins and resol can be arranged as illustrated in the first item of the present invention.

As aforementioned thermoplastic resin, the resin illustrated in the first item of the present invention can be used.

The content of resinous principle is overall relative to die bonding film is preferably more than 7 % by weight.The content of resinous principle is overall relative to die bonding film is preferably less than 25 % by weight, be more preferably less than 20 % by weight, more preferably less than 15 % by weight.

As the compounding ratio of the thermosetting resin in resinous principle (total amount of thermosetting resin and thermoplastic resin), as long as during heating, die bonding film can play the degree of the function as heat curing-type under prescribed conditions, just be not particularly limited, in order to be reduced in the melt viscosity at 130 DEG C, being preferably in the scope of 75 ~ 99 % by weight, being more preferably in the scope of 85 ~ 98 % by weight.

In addition, as the compounding ratio of the thermoplastic resin in resinous principle, in order to be reduced in the melt viscosity at 130 DEG C, being preferably in the scope of 1 ~ 25 % by weight, being more preferably in the scope of 2 ~ 15 % by weight.

In addition, aforementioned die bonding film can the filler as required beyond suitable compounding curing catalysts, linking agent, aforementioned thermal conductive particle, other additive beyond aforementioned filler in the same manner as aforementioned first die bonding film of the present invention.The details of the filler beyond curing catalysts, linking agent, aforementioned thermal conductive particle and other additive beyond aforementioned filler are as the explanation in the first item of the present invention.

It should be noted that, the making method of the die bonding film of aforementioned die bonding film and band cutting blade is as the explanation in the first item of the present invention.

In addition, the manufacture method of the semiconductor device of the die bonding film of aforementioned die bonding film or aforementioned strip cutting blade is employed as the explanation in the first item of the present invention.

< the 3rd > of the present invention

Below, about the 3rd the present invention, itself and the first difference of the present invention are described.(following about the 3rd thermosetting die bonding film of the present invention, also referred to as " die bonding film ") and band cutting blade die bonding film, as formation, characteristic except special instruction in the 3rd item of the present invention, and the die bonding film of cutting blade can be with to play same formation, characteristic with the first die bonding film of the present invention.

(die bonding film of band cutting blade)

As the stacked formation of the die bonding film of the 3rd band cutting blade of the present invention, can be identical with the die bonding film of the first band cutting blade of the present invention.

(cutting blade)

Formation, the characteristic of the 3rd cutting blade of the present invention can be identical with the first cutting blade of the present invention (such as cutting blade 11).

(die bonding film)

The thermal conductivity of 3rd die bonding film of the present invention after thermofixation is more than 1W/mK, is preferably more than 1.2W/mK, is more preferably more than 1.5W/mK.Because the thermal conductivity after thermofixation is more than 1W/mK, the thermal diffusivity of the semiconductor device therefore using aforementioned die bonding film to manufacture is excellent.It should be noted that, the thermal conductivity after the thermofixation of aforementioned die bonding film is more high more preferred, but is such as below 20W/mK.

In 3rd the present invention, " thermal conductivity after thermofixation " refers to 130 DEG C of heating 1 hour, then with the thermal conductivity of 175 DEG C of heating after 5 hours.

The thermal resistance of aforementioned die bonding film is preferably 30 × 10 ^-6m ²below K/W, be more preferably 10 × 10 ^-6m ²below K/W.Being not particularly limited the lower limit of the thermal resistance of aforementioned die bonding film, such as, is 2 × 10 ^-6m ²more than K/W.

It should be noted that, thermal resistance can utilize following formula to obtain.

(thermal resistance (m ²k/W))=(thickness (m) of die bonding film)/(thermal conductivity (W/mK) of die bonding film)

Aforementioned die bonding film comprises thermal conductive particle.

The thermal conductivity of thermal conductive particle is preferably more than 12W/mK, is more preferably more than 20W/mK.The upper limit of the thermal conductivity of thermal conductive particle is not particularly limited, such as, is below 400W/mK, is preferably below 50W/mK.

It should be noted that, the crystalline structure of the thermal conductive particle that the thermal conductivity of thermal conductive particle can obtain by utilizing x ray structure analysis is inferred.

The median size of thermal conductive particle is more than 3 μm, is preferably more than 3.5 μm.Owing to being more than 3 μm, therefore, it is possible to the mobility at improving 120 DEG C ~ 130 DEG C.In addition, the median size of thermal conductive particle is less than 7 μm, is preferably less than 6 μm.Owing to being less than 7 μm, therefore, it is possible to obtain good film shaped property.

It should be noted that, the median size of thermal conductive particle can utilize the method recorded in embodiment to measure.

In the size-grade distribution of thermal conductive particle, preferably there is plural peak.Specifically, preferably there is first peak the particle size range of 0.2 ~ 0.8 μm and there is the second peak the particle size range of 3 ~ 15 μm.Thereby, it is possible between the thermal conductive particle at formation second peak, (in gap) fills the thermal conductive particle forming first peak, therefore, it is possible to fill thermal conductive particle in a large number.

When the particle diameter of first peak is less than 0.2 μm, the viscosity that there is die bonding film uprises, cannot follow the concavo-convex tendency of adherend.When the particle diameter of first peak is more than 0.8 μm, a large amount of fillingizations of thermal conductive particle are had to become the tendency of difficulty.

In addition, when the particle diameter at the second peak is less than 3 μm, a large amount of fillingizations of thermal conductive particle are had to become the tendency of difficulty.In addition, there is the viscosity of die bonding film to become too high, the concavo-convex tendency of adherend cannot be followed.When the particle diameter at the second peak is more than 15 μm, the filming of die bonding film becomes difficulty.

Second peak is more preferably present in the particle size range of 4 ~ 10 μm.

It should be noted that, in the size-grade distribution of thermal conductive particle, want to there is plural peak, the two or more thermal conductive particle that compounding median size is different.

The specific surface area of thermal conductive particle is 1m ²/ more than g, preferably 1.3m ²/ more than g.Owing to being 1m ²/ more than g, the Young's modulus therefore after solidification uprises, reflux-resisting welded property is excellent.In addition, the specific surface area of thermal conductive particle is 3m ²/ below g, is preferably 2.5m ²/ below g.Owing to being 3m ²/ below g, therefore can improve the mobility at 120 DEG C ~ 130 DEG C.

It should be noted that, the specific surface area of thermal conductive particle can utilize the method recorded in embodiment to measure.

As the shape of thermal conductive particle, be not particularly limited, such as can use sheet, needle-like, thread, spherical, lepidiod particle, preferred sphericity is the particle of 0.9 ~ 1.1.Thereby, it is possible to reduce thermal conductive particle and the contact area of resin, the mobility that can improve at 120 DEG C ~ 130 DEG C.It should be noted that, sphericity more close to 1, then represents more close just spherical.

It should be noted that, the sphericity of thermal conductive particle can utilize following method to measure.

The mensuration of sphericity

Die bonding film is put into crucible, under air atmosphere, carries out the heat-flash of 2 hours with 700 DEG C and make its ashing.Utilize SEM (scanning electron microscope) to take pictures to gained ash content, utilize following formula to calculate sphericity by the area and perimeter of observed particle.

(sphericity)={ 4 π × (area) ÷ (girth) ²}

The particle high from the viewpoint of easy acquisition thermal conductivity, sphericity is high, as thermal conductive particle, be preferably alumina particle (thermal conductivity: 36W/mK), Zinc oxide particles (thermal conductivity: 54W/mK), aluminum nitride particle (thermal conductivity: 150W/mK), silicon nitride particle (thermal conductivity: 27W/mK), silicon-carbide particle (thermal conductivity: 200W/mK), magnesium oxide particle (thermal conductivity: 59W/mK), boron nitride particle (thermal conductivity: 60W/mK) etc.Especially alumina particle is high thermal conductivity coefficient, from the viewpoint of dispersed, what obtain easiness is preferred.In addition, boron nitride particle has higher thermal conductivity, therefore, it is possible to use aptly.

Thermal conductive particle preferably utilizes silane coupling agent to carry out processing (pre-treatment).Thus, the dispersiveness of thermal conductive particle becomes well, can carry out a large amount of fillings of thermal conductive particle.

As silane coupling agent, the silane coupling agent illustrated in the first item of the present invention can be used.

The content of thermal conductive particle is more than 75 % by weight relative to die bonding film entirety, is preferably more than 80 % by weight, is more preferably more than 85 % by weight.Owing to being more than 75 % by weight, the thermal diffusivity of the semiconductor device therefore using aforementioned die bonding film to manufacture is excellent.In addition, the content of thermal conductive particle is more much more preferred, but from the view point of masking, such as, is less than 93 % by weight.

Aforementioned die bonding film preferably comprises the resinous principle such as thermosetting resin, thermoplastic resin.

From the aspect of the mobility that can improve at 120 DEG C ~ 130 DEG C, among aforementioned epoxy resins, be at room temperature preferably liquid epoxy resin.

In this specification sheets, liquid state refers to that viscosity at 25 DEG C is less than 5000Pas.It should be noted that, the model HAAKE Roto VISCO1 that viscosity can use Thermo Fisher Scientific K.K. to manufacture measures.

From the aspect of the mobility that can improve at 120 DEG C ~ 130 DEG C, the softening temperature of epoxy resin is preferably less than 100 DEG C, be more preferably less than 50 DEG C, preferably less than 30 DEG C further.

It should be noted that, the softening temperature of epoxy resin measures by the ring and ball method specified in JIS K7234-1986.

In addition, from the aspect of the mobility that can improve at 120 DEG C ~ 130 DEG C, the softening temperature of resol is preferably less than 100 DEG C, is more preferably less than 80 DEG C.

As the compounding ratio of the thermosetting resin in resinous principle (total amount of thermosetting resin and thermoplastic resin), as long as during heating, die bonding film can play the degree of the function as heat curing-type under prescribed conditions, just be not particularly limited, from the aspect of the mobility that can improve at 120 DEG C ~ 130 DEG C, be preferably in the scope of 75 ~ 99 % by weight, be more preferably in the scope of 85 ~ 98 % by weight.

As the compounding ratio of the thermoplastic resin in resinous principle, from the aspect of the mobility that can improve at 120 DEG C ~ 130 DEG C, be preferably in the scope of 1 ~ 25 % by weight, be more preferably in the scope of 2 ~ 15 % by weight.

In addition, aforementioned die bonding film, can the filler as required beyond suitable compounding curing catalysts, linking agent, aforementioned thermal conductive particle, other additive beyond aforementioned filler in the same manner as aforementioned first die bonding film of the present invention.The details of the filler beyond curing catalysts, linking agent, aforementioned thermal conductive particle and other additive beyond aforementioned filler are as the explanation in the first item of the present invention.

It should be noted that, as foregoing curing catalysts, wherein, from the view point of dissolving in the organic solvents such as methylethylketone and latent under room temperature is excellent thus resin storage stability is at room temperature good, four (p-methylphenyl boron) tetraphenylphosphoniphenolate is preferably.

The thickness (being total thickness when duplexer) of aforementioned die bonding film is not particularly limited, is preferably more than 1 μm, is more preferably more than 5 μm, more preferably more than 10 μm.In addition, the thickness of die bonding film is preferably less than 200 μm, is more preferably less than 150 μm, more preferably less than 100 μm, is particularly preferably less than 50 μm.

< the 4th > of the present invention

Below, about the 4th the present invention, itself and the first difference of the present invention are described.(following about the 4th thermosetting die bonding film of the present invention, also referred to as " die bonding film ") and band cutting blade die bonding film, as formation, characteristic except special instruction in the 4th item of the present invention, and the die bonding film of cutting blade can be with to play same formation, characteristic with the first die bonding film of the present invention.

(die bonding film of band cutting blade)

As the stacked formation of the die bonding film of the 4th band cutting blade of the present invention, can be identical with the die bonding film of the first band cutting blade of the present invention.

(cutting blade)

Formation, the characteristic of the 4th cutting blade of the present invention can be identical with the first cutting blade of the present invention (such as cutting blade 11).

(die bonding film)

4th die bonding film of the present invention contains the thermal conductive particle that thermal conductivity is more than 12W/mK.Being not particularly limited the upper limit of the thermal conductivity of thermal conductive particle, such as, is below 400W/mK.Owing to being the thermal conductive particle of more than 12W/mK containing thermal conductivity, the therefore excellent thermal conductivity of aforementioned die bonding film.It should be noted that, the crystalline structure of the thermal conductive particle that the thermal conductivity of thermal conductive particle can obtain by utilizing x ray structure analysis is inferred.

The thermal resistance of aforementioned die bonding film is 30 × 10 ^-6m ²below K/W, preferably 27 × 10 ^-6m ²below K/W.Because thermal resistance is 30 × 10 ^-6m ²below K/W, therefore, it is possible to effectively reject heat to adherend side by the heat from semi-conductor chip.Be 30 × 10 as making the thermal resistance of aforementioned die bonding film ^-6m ²the method of below K/W, include, for example out the thinning of film, film height guides thermalize etc.

About aforementioned die bonding film, the thickness of aforementioned die bonding film is designated as C, when the median size of aforementioned thermal conductive particle is designated as D, C/D is in the scope of 4 ~ 30, be preferably in the scope of 4 ~ 14, be more preferably in the scope of 4 ~ 10.The aforementioned C/D of aforementioned die bonding film is more than 4, and the median size of thermal conductive particle, relative to the thickness of aforementioned die bonding film, is less than to a certain degree.Therefore, it is possible to suppress to produce on the surface of aforementioned die bonding film large concavo-convex.

In addition, aforementioned C/D is less than 30, and the median size of thermal conductive particle has size to a certain degree relative to the thickness of aforementioned die bonding film.Therefore, the rising of viscosity is suppressed, and produces space when can suppress to fit in adherend and between adherend.

The thickness (being total thickness when duplexer) of aforementioned die bonding film is not particularly limited, is preferably less than 60 μm.In addition, can make the thickness of aforementioned die bonding film be more than 1 μm, more than 5 μm, 10 μm with first-class.When the thickness of aforementioned die bonding film is below 60 μm, the heat from semi-conductor chip can be discarded to outside effectively.Therefore, it is possible to improve the thermal diffusivity of the semiconductor device using this die bonding film to manufacture.

The content of aforementioned thermal conductive particle is overall relative to thermosetting die bonding film is preferably more than 75 % by weight, be more preferably more than 80 % by weight, further preferably more than 85 % by weight.In addition, the content of aforementioned thermal conductive particle is more much more preferred, but from the view point of masking, such as, is less than 93 % by weight.When being the thermal conductive particle of more than 12W/mK containing the thermal conductivity being more than 75 % by weight relative to thermosetting die bonding film entirety, the thermal diffusivity of the semiconductor device using this thermosetting die bonding film to manufacture is more excellent.

The specific surface area of aforementioned thermal conductive particle is preferably 1.0m ²/ more than g, be more preferably 2.0m ²/ more than g.For 1.0m ²during/more than g, high elastic coefficient can be obtained after hardening, can good reliability be obtained in resistance to moisture absorption Reflow Soldering test.In addition, the specific surface area of thermal conductive particle is preferably 5.3m ²/ below g, be more preferably 3.9m ²/ below g.For 5.3m ²during/below g, good concavo-convex tracing ability can be obtained.

It should be noted that, the specific surface area of thermal conductive particle measures by BET absorption method (multipoint method) value obtained.Specifically, following numerical value: use Quantachrome Corporation to manufacture 4 connect formula specific surface area pore distribution measurement device " NOVA-4200e type ", die bonding film is put into crucible, under air atmosphere, carry out the heat-flash of 2 hours with 700 DEG C and make its ashing, gained ash content is carried out the vacuum outgas of more than 6 hours with 110 DEG C, then in nitrogen, measure at the temperature of 77.35K and the value that obtains.As the composition of die bonding film, when being organic composition except thermal conductive particle, due to by above-mentioned heat-flash process, organic compositions all in fact is all lost by burning, therefore, gained ash content is considered as thermal conductive particle to measure.

The thermal conductivity of aforementioned die bonding film after thermofixation is preferably more than 1W/mK, is more preferably more than 1.2W/mK, preferred more than 1.5W/mK further.When thermal conductivity after thermofixation is more than 1W/mK, the thermal diffusivity of the semiconductor device using aforementioned die bonding film to manufacture is excellent.It should be noted that, the thermal conductivity of aforementioned die bonding film after thermofixation is more high more preferred, but is such as below 20W/mK.

In 4th the present invention, " thermal conductivity after thermofixation " refers to 130 DEG C of heating 1 hour, then with the thermal conductivity of 175 DEG C of heating after 5 hours.

In addition, the melt viscosity at 130 DEG C of aforementioned die bonding film is preferably in the scope of 10Pas ~ 300Pas, be more preferably in the scope of 20Pas ~ 280Pas, in the scope of more preferably 50Pas ~ 250Pas.When melt viscosity at 130 DEG C is in the scope of 10Pas ~ 300Pas, maintain film shape and viscosity is lower.Therefore, it is possible to follow concavo-convex, the generation that can suppress space of the adherends such as printed circuit board (PCB) fully.It should be noted that, in the 4th the present invention, the melt viscosity at 130 DEG C refers to, as condition determination, shearing rate is set to 5 seconds ^-1and the value obtained.

In addition, as the compounding ratio of the thermoplastic resin in resinous principle, in order to reduce the melt viscosity at 130 DEG C, being preferably in the scope of 1 ~ 25 % by weight, being more preferably in the scope of 2 ~ 15 % by weight.

Aforementioned die bonding film preferably comprises solidification promoting catalyst.Thereby, it is possible to promote the thermofixation of the solidifying agent such as epoxy resin and resol.As solidification promoting catalyst, be not particularly limited, such as, as phosphorus-boron system curing catalysts, can list (being Hokko Chemical Industry Co., Ltd.'s system) such as tetraphenyl boron tetraphenylphosphoniphenolate (trade(brand)name: TPP-K), four (p-methylphenyl boron) tetraphenylphosphoniphenolate (trade(brand)name: TPP-MK), triphenylphosphine triphenylborane (trade(brand)name: TPP-S).As imidazoles system solidification promoting catalyst, glyoxal ethyline (trade(brand)name: 2MZ) can be listed, 2-undecyl imidazole (trade(brand)name: C11-Z), 2-heptadecyl imidazole (trade(brand)name: C17Z), 1,2 dimethylimidazole (trade(brand)name: 1.2DMZ), 2-ethyl-4-methylimidazole (trade(brand)name: 2E4MZ), 2-phenylimidazole (trade(brand)name: 2PZ), 2-phenyl-4-methylimidazole (trade(brand)name: 2P4MZ), 1 benzyl 2 methyl imidazole (trade(brand)name: 1B2MZ), 1-benzyl-2-phenylimidazole (trade(brand)name: 1B2PZ), 1-cyano ethyl-glyoxal ethyline (trade(brand)name: 2MZ-CN), 1-cyano ethyl-2-undecyl imidazole (trade(brand)name: C11Z-CN), 1-cyano ethyl-2-phenylimidazole trimellitate (trade(brand)name: 2PZCNS-PW), 2,4-diamino-6-[2 '-methylimidazolyl-(1 ')]-ethyl s-triazine (trade(brand)name: 2MZ-A), 2,4-diamino-6-[2 '-undecyl imidazole base-(1 ')]-ethyl s-triazine (trade(brand)name: C11Z-A), 2,4-diamino-6-[2 '-ethyl-4 '-methylimidazolyl-(1 ')]-ethyl s-triazine (trade(brand)name: 2E4MZ-A), 2,4-diamino-6-[2 '-methylimidazolyl-(1 ')]-ethyl s-triazine isocyanuric acid adduct (trade(brand)name: 2MA-OK), 2-phenyl-4,5-bishydroxymethyl imidazoles (trade(brand)name: 2PHZ-PW), 2-phenyl-4-methyl-5-hydroxymethylimidazole (trade(brand)name: 2P4MHZ-PW) etc. (being Shikoku Chem's system).Wherein, the aspect that, curing reaction high from reactivity carries out at short notice, is preferably 2-phenyl-4,5-bishydroxymethyl imidazoles.

In addition, aforementioned die bonding film, can the filler as required beyond suitable compounding linking agent, aforementioned thermal conductive particle, other additive beyond aforementioned filler in the same manner as aforementioned first die bonding film of the present invention.The details of the filler beyond linking agent, aforementioned thermal conductive particle and other additive beyond aforementioned filler are as the explanation in the first item of the present invention.

< the 5th > of the present invention

Below, about the 5th the present invention, itself and the first difference of the present invention are described.(following about the 5th thermosetting die bonding film of the present invention, also referred to as " die bonding film ") and band cutting blade die bonding film, as formation, characteristic except special instruction in the 5th item of the present invention, and the die bonding film of cutting blade can be with to play same formation, characteristic with the first die bonding film of the present invention.

(die bonding film of band cutting blade)

As the stacked formation of the die bonding film of the 5th band cutting blade of the present invention, can be identical with the die bonding film of the first band cutting blade of the present invention.

(cutting blade)

Formation, the characteristic of the 5th cutting blade of the present invention can be identical with the first cutting blade of the present invention (such as cutting blade 11).

(die bonding film)

The thermal conductivity of 5th die bonding film of the present invention after thermofixation is more than 1W/mK, is preferably more than 1.2W/mK, is more preferably more than 1.5W/mK.Because the thermal conductivity after thermofixation is more than 1W/mK, the thermal diffusivity of the semiconductor device therefore using aforementioned die bonding film to manufacture is excellent.It should be noted that, the thermal conductivity of aforementioned die bonding film is more high more preferred, but is such as below 20W/mK.

In 5th the present invention, " thermal conductivity after thermofixation " refers to 130 DEG C of heating 1 hour, then with the thermal conductivity of 175 DEG C of heating after 5 hours.In addition, " die bonding film after thermofixation " refer to by play from the state (making the state after die bonding film) before thermofixation the heat of reaction produced till thermofixation terminates completely be designated as 100% time, the heat of reaction produced to thermofixation terminates completely from the state of " die bonding film after thermofixation " is the film of less than 5%.It should be noted that, above-mentioned heat of reaction uses the value obtained by means of differential scanning calorimetry mensuration (DSC).

In addition, the melt viscosity at 130 DEG C of aforementioned die bonding film is preferably in the scope of 10Pas ~ 600Pas, is preferably in the scope of 25Pas ~ 600Pas, is more preferably in the scope of 50Pas ~ 300Pas.If the melt viscosity at 130 DEG C is in the scope of 10Pas ~ 600Pas, then maintain the shape of film and viscosity is lower.Therefore, it is possible to follow concavo-convex, the generation that can suppress space of the adherends such as printed circuit board (PCB) fully.It should be noted that, in the 5th the present invention, the melt viscosity at 130 DEG C refers to, as condition determination, shearing rate is set to 5 seconds ^-1and the value obtained.

The thermal conductivity that it is more than 75 % by weight that aforementioned die bonding film contains relative to thermosetting die bonding film entirety is the thermal conductive particle of more than 12W/mK, preferably containing more than 80 % by weight, more preferably containing more than 85 % by weight.In addition, the content of aforementioned thermal conductive particle is more much more preferred, but from the view point of masking, such as, is less than 93 % by weight.When being the thermal conductive particle of more than 12W/mK containing the thermal conductivity being more than 75 % by weight relative to thermosetting die bonding film entirety, the thermal diffusivity of the semiconductor device using this thermosetting die bonding film to manufacture is more excellent.It should be noted that, the crystalline structure of the thermal conductive particle that the thermal conductivity of thermal conductive particle can obtain by utilizing x ray structure analysis is inferred.

The median size of aforementioned thermal conductive particle be preferably more than 1 μm and less than 10 μm, be more preferably more than 2 μm and less than 7 μm.This is because, it is more than 1 μm by making the median size of aforementioned thermal conductive particle, the wettability of thermosetting die bonding film to adherend can be guaranteed, it is made to play good cementability, by being less than 10 μm, interpolation thermal conductive particle can be made and effect that the thermal conductivity brought improves is better.In addition, by the median size of aforementioned range, can thinning thermosetting die bonding film thickness so that semi-conductor chip high level can be dissolved, and can to prevent because thermal conductive particle is outstanding and cause producing die crack from thermosetting die bonding film.It should be noted that, the median size of thermal conductive particle is the size-grade distribution meter (HORIBA, LTD. system, the device name that utilize luminosity formula; LA-910) value obtained.

As the compounding ratio of the thermosetting resin in resinous principle (total amount of thermosetting resin and thermoplastic resin), as long as during heating, die bonding film can play the degree of the function as heat curing-type under prescribed conditions, just be not particularly limited, in order to reduce the melt viscosity at 130 DEG C, being preferably in the scope of 75 ~ 99 % by weight, being more preferably in the scope of 85 ~ 98 % by weight.

(manufacture method of semiconductor device)

Be 1 ~ 20kg/cm at pressure ²condition under, aforementioned thermosetting die bonding film is heated in Heating temperature 80 ~ 200 DEG C, the scope of 0.1 ~ 24 hour heat-up time, thus makes the heat curing processes (hereinafter also referred to as the first embodiment) of its thermofixation.

In addition, the manufacture method of the semiconductor device of present embodiment also comprises following operation:

Be 1 ~ 20kg/cm at pressure ²condition under, aforementioned thermosetting die bonding film is heated in Heating temperature 80 ~ 200 DEG C, the scope of 0.1 ~ 24 hour heat-up time, thus makes the heat curing processes (hereinafter also referred to as the second embodiment) of its thermofixation.

In the manufacture method of the semiconductor device of present embodiment, first, the die bonding film (preparatory process) of band cutting blade is prepared.This preparatory process can be identical with the preparatory process illustrated in the first item of the present invention.

First, the semiconductor crystal wafer attaching part of the die bonding film in the die bonding film of band cutting blade crimps semiconductor crystal wafer, make its bonding maintenance and fixing (bonding process).This bonding process can be identical with the bonding process illustrated in the first item of the present invention.

Then, the cutting (cutting action) of semiconductor crystal wafer is carried out.This cutting action can be identical with the cutting action illustrated in the first item of the present invention.

Then, the pickup (pickup process) of semi-conductor chip is carried out in order to be peeled off by the semi-conductor chip of the die bonding film being bonded and fixed to band cutting blade.This pickup process can be identical with the pickup process illustrated in the first item of the present invention.

Then, picked up semi-conductor chip is clipped die bonding film and be bonded and fixed to (chip join operation) on adherend.This chip join operation can be identical with the chip join operation illustrated in the first item of the present invention.

Then, because die bonding film is heat curing-type, therefore by being heating and curing semi-conductor chip being bonded and fixed to adherend, making its high-temperature capability improve (heat curing processes).Can carry out at Heating temperature is 80 ~ 200 DEG C, be preferably 100 ~ 175 DEG C, be more preferably 100 ~ 140 DEG C.In addition, can be 0.1 ~ 24 littlely to carry out at present, be preferably 0.1 ~ 3 hour, be more preferably 0.2 ~ 1 hour in heat-up time.In addition, being heating and curing can at pressure 1 ~ 20kg/cm ²condition under (under pressurized conditions) carry out.Aforementioned pressure condition optimization is 2 ~ 18kg/cm ²scope in, be more preferably 5 ~ 15kg/cm ²scope in.Add being heating and curing of pressure such as to carry out in the chamber being filled with non-active gas.Because heat curing processes is 1 ~ 20kg/cm at pressure ²condition under (under pressurized conditions) carry out, if in chip join operation, even if create space between die bonding film and adherend, also can make its disperse in resin and in appearance disappear and can not expand.Its result, can reduce the impact caused by space.It should be noted that, clip die bonding film and the product of the semi-conductor chip that has been adhesively fixed on substrate can be used in Reflow Soldering operation.

The shear bond power of the die bonding film after thermofixation is preferably more than 0.2MPa relative to adherend, is more preferably 0.2 ~ 10MPa.If the shear bond power of die bonding film is at least more than 0.2MPa, then when carrying out wire-bonded operation, shearing strain can not be produced because of the ultrasonic vibration in this operation or heating at the bonding plane of die bonding film and semi-conductor chip or adherend.That is, semi-conductor chip can not move because of ultrasonic vibration during wire-bonded, prevents the success ratio of wire-bonded from reducing thus.

Then, as required, the front end of portion of terminal (inner lead) of adherend is carried out being electrically connected (wire-bonded operation) with the electrode pad bonding wire on semi-conductor chip.This wire-bonded operation can be identical with the wire-bonded operation illustrated in the first item of the present invention.

Then, as required, potting resin is utilized to carry out packaged semiconductor (packaging process).This packaging process can be identical with the packaging process illustrated in the first item of the present invention.

Then, heat as required, make in aforementioned encapsulation operation, to solidify insufficient potting resin and solidify completely (after fixing operation).

This after fixing operation can be identical with the after fixing operation illustrated in the first item of the present invention.

Embodiment

Below, suitable embodiment of the present invention is described illustratively in detail.But for the material recorded in this embodiment, compounding amount etc., when being not particularly limited record, the purport of this invention is not limited thereto.It should be noted that, " part " refers to " weight part ".

[first invention]

Following each embodiments etc. correspond to first invention.

(embodiment 1)

The making > of < thermosetting die bonding film

Make following (a) ~ (f) be dissolved in MEK (methylethylketone), adjustment concentration makes viscosity be at room temperature 150mPas, obtains adhesive composite solution.

(a) epoxy resin (Mitsubishi chemical Co., Ltd's system, goods name: JER827 (bisphenol A type epoxy resin), be at room temperature liquid (softening temperature is less than 25 DEG C))

9.5 part

(b) resol (have the resol of biphenyl aralkyl skeleton, bright and change into Co., Ltd.'s system, goods name: MEH-7851SS, softening temperature 67 DEG C, hydroxyl equivalent 203g/eq.)

9.5 part

(c) acrylic copolymer (Nagase ChemteX Corporation system, goods name: TEISANRESIN SG-P3, weight-average molecular weight: 850,000, second-order transition temperature: 12 DEG C)

1 part

(d) solidification promoting catalyst (Bei Xing KCC system, goods name: TPP-MK, four (p-methylphenyl boron) tetraphenylphosphoniphenolate)

0.2 part

(e) spherical alumina filler A (Deuki Kagaku Kogyo Co., Ltd's system, goods name: DAW-05, median size: 5.1 μm, specific surface area: 0.5m ²/ g)

60 parts

(f) spherical alumina filler B (Admatechs Co., Ltd. system, goods name: AO802, median size: 0.7 μm, specific surface area: 7.5m ²/ g)

20 parts

It should be noted that, spherical alumina filler A and spherical alumina filler B has carried out surface treatment in advance.Surface treatment utilizes dry method to carry out, and processes with the silane coupling agent of the amount (silane coupling agent treatment capacity) shown in following formula.Silane coupling agent employs the KBM503 of KCC of SHIN-ETSU HANTOTAI.

(silane coupling agent treatment capacity)=(specific surface area (m of weight (the g) × alumina packing of alumina packing ²/ g)) the minimum vertex-covering area (m of/silane coupling agent ²/ g)

Minimum vertex-covering area (the m of silane coupling agent ²/ g)=6.02 × 10 ²³× 13 × 10 ^-20the molecular weight of/silane coupling agent

By this adhesive composite solution coat carried out polysiloxane demoulding process, thickness is on the demoulding process film (release liner) be made up of pet film of 50 μm, then with 130 DEG C of dryings 2 minutes.Make the die bonding film A1 of thickness 25 μm thus.

(embodiment 2)

The making > of < thermosetting die bonding film

6.5 part

7 parts

1.5 part

(d) solidification promoting catalyst (Bei Xing KCC system, goods name: TPP-MK, four (to methyl boron) tetraphenylphosphoniphenolate)

0.15 part

60 parts

25 parts

By this adhesive composite solution coat carried out polysiloxane demoulding process, thickness is on the demoulding process film (release liner) be made up of pet film of 50 μm, then with 130 DEG C of dryings 2 minutes.Make the die bonding film B1 of thickness 25 μm thus.

(comparative example 1)

The making > of < thermosetting die bonding film

Make following (a) ~ (e) be dissolved in MEK (methylethylketone), adjustment concentration makes viscosity be at room temperature 150mPas, obtains adhesive composite solution.

8 parts

4 parts

0.2 part

(e) spherical alumina filler B (Admatechs Co., Ltd. system, goods name: AO802, median size: 0.7 μm, specific surface area: 7.5m ²/ g)

80 parts

It should be noted that, spherical alumina filler B has carried out surface treatment in advance.Surface treatment utilizes dry method to carry out, and processes with the silane coupling agent of the amount (silane coupling agent treatment capacity) shown in following formula.Silane coupling agent employs the KBM503 of KCC of SHIN-ETSU HANTOTAI.

By this adhesive composite solution coat carried out polysiloxane demoulding process, thickness is on the demoulding process film (release liner) be made up of pet film of 50 μm, then with 130 DEG C of dryings 2 minutes.Make the die bonding film C1 of thickness 25 μm thus.

It should be noted that, the median size of the filler entirety (spherical alumina filler A and spherical alumina filler B) in the die bonding film of embodiment, comparative example and the specific surface area of filler entirety as shown in table 1.In addition, the value of A/B, filler are also shown in table 1 in the lump relative to the ratio of the thermoplastic resin of (in the total amount of thermosetting resin and thermoplastic resin) in the ratio of the thermosetting resin of (in the total amount of thermosetting resin and thermoplastic resin) in the loading level of die bonding film entirety, resinous principle, resinous principle.

(during high speed shear at 130 DEG C (50 seconds ^-1shearing rate) melt viscosity measure)

Determine the melt viscosity during high speed shear at before thermofixation 130 DEG C of die bonding film A1 ~ C1.Measure and use rheometer (HAAKE Inc., RS-1), utilize parallel plate method to carry out.That is, take 0.1g as sample from each die bonding film A1 ~ C1, this sample is fed intake to the plate being heated to 130 DEG C in advance.Melt viscosity is set to the value from measuring and starting after 300 seconds.In addition, shearing rate is set to 50 seconds ^-1, the gap between plate is set to 0.1mm.Result is shown in following table 1.

((shearing rate 5 seconds during low velocity shear at 130 DEG C ^-1) melt viscosity measure)

Determine the melt viscosity during low velocity shear at before thermofixation 130 DEG C of die bonding film A1 ~ C1.Measure and use rheometer (HAAKE Inc., RS-1), utilize parallel plate method to carry out.That is, take 0.1g as sample from each die bonding film A1 ~ C1, this sample is fed intake to the plate being heated to 130 DEG C in advance.Melt viscosity is set to the value from measuring and starting after 300 seconds.In addition, shearing rate is set to 5 seconds ^-1, the gap between plate is set to 0.1mm.Result is shown in following table 1.

(mensuration of thermal conductivity)

Carry out the mensuration of the thermal conductivity after the thermofixation of die bonding film A1 ~ C1.Thermal conductivity is obtained by following formula.Result is shown in table 1.It should be noted that, the thermal conductivity after thermofixation refers to 130 DEG C of heating 1 hour, then with the thermal conductivity of 175 DEG C of heating after 5 hours.

(thermal conductivity)=(thermal diffusivity) × (specific heat) × (proportion)

< thermal diffusivity >.

After die bonding film being laminated for thickness 1mm, be die-cut into the round-shaped of diameter 1cm.Then, with 130 DEG C of heating 1 hour, then with 175 DEG C of heating 5 hours.Use this sample, use laser flash method heat determination device (ULVAC, Inc. system, TC-9000), measure thermal diffusivity.

< specific heat >

Use DSC (TA instrument system, Q-2000), utilize the measuring method according to the regulation of JIS-7123 to obtain.

< proportion >

Use electronic balance (Shimadzu Scisakusho Ltd's system, AEL-200), utilize Archimedes method to measure.

(space evaluation)

Use heat lamination, the die bonding film A1 ~ C1 of thickness 25 μm is attached on the glass-chip of thickness 100 μm with the area of 10mm × 10mm, has made sample chip.Temperature during attaching is 60 DEG C, pressure is 0.15MPa.

Then, by sample chip with 130 DEG C, 2kg, the condition in 2 seconds be engaged in BGA substrate (Japan Circuit Industrial CO., LTD system, goods name: CA-BGA (2), 10 mean roughness (Rz)=11 ~ 13 μm in surface).Thereafter, under an increased pressure with 130 DEG C of heating 1 hour, then with 175 DEG C of heating 5 hours.Pressurization when being heating and curing in particular by baking oven with 5kg/cm ²fill nitrogen to carry out.Opticmicroscope is used to observe from the glass surface side of the sample chip engaged.Use binaryzation software (WinRoof ver.5.6) to calculate space and observe area shared in image.Area shared by space is "○" relative to the average evaluation of surface-area less than 20% of die bonding film, be the average evaluation of more than 20% is "×".Result is shown in table 1.

[table 1]

[second the present invention]

Following each embodiments etc. correspond to second the present invention.

(embodiment 3)

The making > of < thermosetting die bonding film

9.5 part

1 part

0.2 part

60 parts

20 parts

By this adhesive composite solution coat carried out polysiloxane demoulding process, thickness is on the demoulding process film (release liner) be made up of pet film of 50 μm, then with 130 DEG C of dryings 2 minutes.Make the die bonding film A2 of thickness 25 μm thus.

(embodiment 4)

The making > of < thermosetting die bonding film

6.5 part

7 parts

1.5 part

0.15 part

60 parts

25 parts

By this adhesive composite solution coat carried out polysiloxane demoulding process, thickness is on the demoulding process film (release liner) be made up of pet film of 50 μm, then with 130 DEG C of dryings 2 minutes.Make the die bonding film B2 of thickness 25 μm thus.

(comparative example 2)

The making > of < thermosetting die bonding film

8 parts

4 parts

0.2 part

80 parts

By this adhesive composite solution coat carried out polysiloxane demoulding process, thickness is on the demoulding process film (release liner) be made up of pet film of 50 μm, then with 130 DEG C of dryings 2 minutes.Make the die bonding film C2 of thickness 25 μm thus.

It should be noted that, the median size of the filler entirety (spherical alumina filler A and spherical alumina filler B) in the die bonding film of embodiment, comparative example and the specific surface area of filler entirety as shown in table 2.In addition, filler is also shown in table 2 in the lump relative to the ratio of the thermoplastic resin of (in the total amount of thermosetting resin and thermoplastic resin) in the ratio of the thermosetting resin of (in the total amount of thermosetting resin and thermoplastic resin) in the loading level of die bonding film entirety, resinous principle, resinous principle.

(mensuration of the melt viscosity at 130 DEG C)

Determine the melt viscosity at before thermofixation 130 DEG C of die bonding film A2 ~ C2.Measure and use rheometer (HAAKE Inc., RS-1), utilize parallel plate method to carry out.That is, take 0.1g as sample from each die bonding film A2 ~ C2, this sample is fed intake to the plate being heated to 130 DEG C in advance.Melt viscosity is set to the value from measuring and starting after 300 seconds.In addition, shearing rate is set to 5 seconds ^-1, the gap between plate is set to 0.1mm.Result is shown in following table 2.

(mensuration of thermal conductivity)

Carry out the mensuration of the thermal conductivity after the thermofixation of die bonding film A2 ~ C2.Thermal conductivity is obtained by following formula.Result is shown in table 2.It should be noted that, the thermal conductivity after thermofixation refers to 130 DEG C of heating 1 hour, then with the thermal conductivity of 175 DEG C of heating after 5 hours.

(thermal conductivity)=(thermal diffusivity) × (specific heat) × (proportion)

< thermal diffusivity >.

< specific heat >

< proportion >

(space evaluation)

Use heat lamination, the die bonding film A2 ~ C2 of thickness 25 μm is attached on the glass-chip of thickness 100 μm with the area of 10mm × 10mm, has made sample chip.

Then, by sample chip with 130 DEG C, 2kg, the condition in 2 seconds be engaged in BGA substrate (Japan Circuit Industrial CO., LTD system, goods name: CA-BGA (2), 10 mean roughness (Rz)=11 ~ 13 μm in surface).Thereafter, under an increased pressure with 130 DEG C of heating 1 hour, then with 175 DEG C of heating 5 hours.Pressurization when being heating and curing in particular by baking oven with 5kg/cm ²fill nitrogen to carry out.Opticmicroscope is used to observe from the glass surface side of the sample chip engaged.Use binaryzation software (WinRoof ver.5.6) to calculate space and observe area shared in image.Area shared by space is "○" relative to the average evaluation of surface-area less than 20% of die bonding film, be the average evaluation of more than 20% is "×".Result is shown in table 2.

[table 2]

[the 3rd the present invention]

Following each embodiments etc. correspond to the 3rd the present invention.

The composition used in embodiment is described.

Epoxy resin: the JER827 of Mitsubishi chemical Co., Ltd (bisphenol A type epoxy resin, Mw:370, be liquid, softening temperature at 25 DEG C: less than 25 DEG C)

Resol: the bright MEH-7851-SS (there is the resol of biphenyl aralkyl skeleton, hydroxyl equivalent: 203g/eq., softening temperature: 67 DEG C) with changing into Co., Ltd.

Acrylic rubber: the TEISANRESIN SG-70L (acrylic copolymer, Mw:90 ten thousand, second-order transition temperature :-13 DEG C) of Nagase ChemteX Corporation

Catalyzer: the TPP-MK (four (p-methylphenyl boron) tetraphenylphosphoniphenolate) of Hokko Chemical Industry Co., Ltd.

Filler 1: DAW-07 (spherical alumina filler, the median size: 9 μm, specific surface area: 0.3m of Deuki Kagaku Kogyo Co., Ltd ²/ g, thermal conductivity: 36W/mK, sphericity: 0.91)

Filler 2: DAW-05 (spherical alumina filler, the median size: 5 μm, specific surface area: 0.4m of Deuki Kagaku Kogyo Co., Ltd ²/ g, thermal conductivity: 36W/mK, sphericity: 0.91)

AO802 (spherical alumina filler, the median size: 0.7 μm, specific surface area: 6.0m of filler 3:Admatechs Co., Ltd. ²/ g, thermal conductivity: 36W/mK, sphericity: 0.95)

Silane coupling agent: the KBM-503 (3-methacryloxypropyl trimethoxy silane) of Shin-Etsu Chemial Co., Ltd

The surface treatment method of filler is described.

Filler 1 ~ 3 silane coupling agent is carried out surface treatment, obtains surface treatment filler 1 ~ 3.Surface treatment utilizes dry method to carry out, and processes with the silane coupling agent of the amount shown in following formula.

Silane coupling agent treatment capacity=(specific surface area (m of weight (the g) × filler of filler ²/ g)) the minimum vertex-covering area (m of/silane coupling agent ²/ g)

[embodiment and comparative example]

The making of die bonding film

According to the compounding ratio recorded in table 3, epoxy resin, resol, acrylic rubber, catalyzer and surface treatment filler are dissolved in methylethylketone (MEK), disperses, obtain the adhesive composite solution that viscosity is suitable for applying.Thereafter, by adhesive composite solution coat carried out polysiloxane demoulding process, thickness is on the demoulding process film (release liner) be made up of pet film of 50 μm, then with 130 DEG C of dryings 2 minutes, die bonding film is obtained.The thickness of die bonding film is shown in table 3.

[evaluation]

Gained die bonding film is used to carry out following evaluation.Result is shown in table 3.

(mensuration of the median size of filler)

Die bonding film is put into crucible, under air atmosphere, carries out the heat-flash of 2 hours with 700 DEG C and make its ashing.Make gained ash content be dispersed in pure water, carry out the ultrasonication of 10 minutes, use laser diffraction and scattering formula particle size distribution device (Beckman Coulter, Inc. system, " LS13320 "; Wet method) obtain median size.It should be noted that, as the composition of die bonding film, except filler, be organic composition, due to by above-mentioned heat-flash process, organic compositions all in fact all burns mistake, therefore gained ash content is considered as filler to measure.

(mensuration of the BET specific surface area of filler)

BET specific surface area utilizes BET absorption method (multipoint method) to measure.Specifically, use Quantachrome Corporation to manufacture 4 connect formula specific surface area/pore distribution measurement device " NOVA-4200e type ", the ash content obtained according to above-mentioned " mensuration of the median size of filler " item is carried out the vacuum outgas of more than 6 hours with 110 DEG C, then measure at the temperature of 77.35K in nitrogen.

(mensuration of thermal conductivity)

Carry out the mensuration of the thermal conductivity after the thermofixation of die bonding film.Thermal conductivity is obtained by following formula.It should be noted that, the thermal conductivity after thermofixation refers to 130 DEG C of heating 1 hour, then with the thermal conductivity of 175 DEG C of heating after 5 hours.

(thermal conductivity)=(thermal diffusivity) × (specific heat) × (proportion)

Thermal diffusivity

Specific heat

Proportion

(thermal resistance)

Be 30 × 10 by thermal resistance ^-6m ²the situation of below K/W is judged to be zero, more than 30 × 10 ^-6m ²the situation of K/W is judged to be ×.

(wafer stationarity (attaching to Silicon Wafer))

Die bonding film is peeled off from demoulding process film, at room temperature uses hand roller to fit to self adhesive tape (BT-315, Nitto Denko Corp's system) with on the die bonding film face of demoulding process film contacts.Cut the section of 10mm × 120mm with cutting knife from the duplexer obtained by fitting.On the hot plate of 65 DEG C, the hand roller of 2kg is used to be fitted on the wafer of 6 inches in the die bonding film face of section.From laminating end after 30 minutes, measure peel adhesion when section being peeled off from wafer with the width of 10mm according to JIS Z0237.It should be noted that, peel angle is 180 degree, peeling rate is 300mm/ minute.In addition, as extensometer, employ AGS-J (trade(brand)name), 50N load sensor (model: SM-50N-168, capacity 50N, Interface Corporation system) that Shimadzu Corporation manufactures.Be that the situation of more than 1N/10mm is judged to be zero (well), is judged to be × (bad) lower than the situation of 1N/10mm by peel adhesion.

(space evaluation)

Utilize heat lamination, die bonding film is attached on the glass-chip of thickness 100 μm with the area of 10mm × 10mm, has made sample chip.Then, by sample chip with 130 DEG C, 2kg, the condition in 2 seconds be engaged in BGA substrate (Japan Circuit Industrial CO., LTD system, goods name: CA-BGA (2), 10 mean roughness (Rz)=11 ~ 13 μm in surface).Thereafter, under an increased pressure with 130 DEG C of heating 1 hour, then with 175 DEG C of heating 5 hours.Pressurization when being heating and curing in particular by baking oven with 5kg/cm ²fill nitrogen to carry out.Opticmicroscope is used to observe from the glass surface side of the sample chip engaged.Use binaryzation software (WinRoof ver.5.6) to calculate space and observe area shared in image.Area shared by space is "○" relative to the average evaluation of surface-area less than 20% of die bonding film, be the average evaluation of more than 20% is "×".

[table 3]

The median size of filler is little and the die bonding film of the comparative example 3 that specific surface area is large cannot follow fully on BGA substrate concavo-convex, create space.In addition, the median size of filler is large and peel adhesion that the is die bonding film of comparative example 4 that specific surface area is little is little, wafer stationarity is poor.It should be noted that, the die bonding film of comparative example 4, owing to not being attached at BGA substrate, therefore cannot evaluate space.

On the other hand, the median size of filler is 3 μm ~ 7 μm and specific surface area is 1m ²/ g ~ 3m ²the embodiment 5 ~ 9 of/g does not produce space substantially.In addition, thermal conductivity is also excellent.

[the 4th the present invention]

Following each embodiments etc. correspond to the 4th the present invention.

(embodiment 10)

The making > of < thermosetting die bonding film

(a) epoxy resin (Mitsubishi chemical Co., Ltd's system, goods name: JER827 (bisphenol A type epoxy resin), be liquid (softening temperature be less than 25 DEG C) at normal temperatures)

9.5 part

10.5 parts

(c) acrylic copolymer (Nagase ChemteX Corporation system, goods name: TEISANRESIN SG-70L)

5 parts

(d) solidification promoting catalyst (four countries change into Co., Ltd.'s system, goods name: 2PHZ-PW, 2-phenyl-4,5-bishydroxymethyl imidazoles)

0.1 part

(e) spherical alumina filler A (Admatechs Co., Ltd. system, goods name: AO802, median size: 0.6 μm, specific surface area: 7.5m ²/ g, thermal conductivity: 36W/mK)

5 parts

(f) spherical alumina filler C (Deuki Kagaku Kogyo Co., Ltd's system, goods name: DAW-05, median size: 5 μm, specific surface area: 0.5m ²/ g, thermal conductivity: 36W/mK)

70 parts

It should be noted that, spherical alumina filler has carried out surface treatment in advance.Surface treatment utilizes dry method to carry out, and processes with the silane coupling agent of the amount (silane coupling agent treatment capacity) shown in following formula.Silane coupling agent employs the KBM503 of KCC of SHIN-ETSU HANTOTAI.

By this adhesive composite solution coat carried out polysiloxane demoulding process, thickness is on the demoulding process film (release liner) be made up of pet film of 50 μm, then with 130 DEG C of dryings 2 minutes.Make the die bonding film A4 of thickness 20 μm thus.

(embodiment 11)

The making > of < thermosetting die bonding film

8.6 part

9.5 part

2 parts

0.1 part

56 parts

(f) spherical alumina filler B ((Deuki Kagaku Kogyo Co., Ltd's system, goods name: DAW-07, median size: 9 μm, specific surface area: 0.3m ²/ g, thermal conductivity: 36W/mK)

24 parts

By this adhesive composite solution coat carried out polysiloxane demoulding process, thickness is on the demoulding process film (release liner) be made up of pet film of 50 μm, then with 130 DEG C of dryings 2 minutes.Make the die bonding film B4 of thickness 20 μm thus.

(embodiment 12)

The making > of < thermosetting die bonding film

6.8 part

7.5 part

0.75 part

0.1 part

58 parts

27 parts

By this adhesive composite solution coat carried out polysiloxane demoulding process, thickness is on the demoulding process film (release liner) be made up of pet film of 50 μm, then with 130 DEG C of dryings 2 minutes.Make the die bonding film C4 of thickness 60 μm thus.

(embodiment 13)

The making > of < thermosetting die bonding film

8.6 part

9.5 part

2 parts

0.1 part

40 parts

By this adhesive composite solution coat carried out polysiloxane demoulding process, thickness is on the demoulding process film (release liner) be made up of pet film of 50 μm, then with 130 DEG C of dryings 2 minutes.Make the die bonding film D4 of thickness 40 μm thus.

(comparative example 6)

The making > of < thermosetting die bonding film

8.6 part

9.5 part

2 parts

0.1 part

80 parts

Minimum vertex-covering area (the m of silane coupling agent ²/ g)=6.02 × 10 ²³× 13 × 1 ^w-20the molecular weight of/silane coupling agent

By this adhesive composite solution coat carried out polysiloxane demoulding process, thickness is on the demoulding process film (release liner) be made up of pet film of 50 μm, then with 130 DEG C of dryings 2 minutes.Make the die bonding film E4 of thickness 20 μm thus.

(comparative example 7)

The making > of < thermosetting die bonding film

8.6 part

9.5 part

2 parts

0.1 part

40 parts

By this adhesive composite solution coat carried out polysiloxane demoulding process, thickness is on the demoulding process film (release liner) be made up of pet film of 50 μm, then with 130 DEG C of dryings 2 minutes.Make the die bonding film F4 of thickness 10 μm thus.

(comparative example 8)

The making > of < thermosetting die bonding film

19 parts

21 parts

2.1 part

0.2 part

58 parts

27 parts

By this adhesive composite solution coat carried out polysiloxane demoulding process, thickness is on the demoulding process film (release liner) be made up of pet film of 50 μm, then with 130 DEG C of dryings 2 minutes.Make the die bonding film G4 of thickness 80 μm thus.

It should be noted that, the median size of the filler entirety (spherical alumina filler A, spherical alumina filler B and spherical alumina filler C) in the die bonding film of embodiment, comparative example and the specific surface area of filler entirety as shown in table 4.

In addition, the value of C/D, filler are also shown in table 4 in the lump relative to the ratio of the thermoplastic resin of (in the total amount of thermosetting resin and thermoplastic resin) in the ratio of the thermosetting resin of (in the total amount of thermosetting resin and thermoplastic resin) in the loading level of die bonding film entirety, resinous principle, resinous principle.

(mensuration of thermal conductivity)

Carry out the mensuration of the thermal conductivity after the thermofixation of die bonding film A4 ~ G4.Thermal conductivity is obtained by following formula.Result is shown in table 4.It should be noted that, the thermal conductivity after thermofixation refers to 130 DEG C of heating 1 hour, then with the thermal conductivity of 175 DEG C of heating after 5 hours.

(thermal conductivity)=(thermal diffusivity) × (specific heat) × (proportion)

< thermal diffusivity >.

After die bonding film being laminated for thickness 1mm, be die-cut into the round-shaped of diameter 1cm.Then, with 130 DEG C of heating 1 hour, then with 175 DEG C of heating 5 hours.Use this sample, use laser flash method heat determination device (ULVAC, Inc. system, TC-9000) to measure thermal diffusivity.

< specific heat >

< proportion >

(thermal resistance and evaluation)

(thickness)/(thermal conductivity) is obtained as thermal resistance.By 30 × 10 ^-6m ²the average evaluation of below K/W is zero, be greater than the average evaluation of this numerical value for ×.Whether it should be noted that, will be that 1W is as determinating reference during thickness 30 μm.Result is shown in table 4.

(plasticity)

Have rated the plasticity of die bonding film of embodiment, comparative example.Specifically, the average evaluation not carrying out being coated with can having striped, pin hole is "○", and by creating striped, the average evaluation of pin hole is "×".Result is shown in table 4.

(space evaluation)

Utilize heat lamination, the die bonding film A4 ~ G4 of thickness 25 μm is attached on the glass-chip of thickness 100 μm with the area of 10mm × 10mm, has made sample chip.

Then, by sample chip with 130 DEG C, 2kg, the condition in 2 seconds be engaged in BGA substrate (Japan Circuit Industrial CO., LTD system, goods name: CA-BGA (2), 10 mean roughness (Rz)=11 ~ 13 μm in surface).Thereafter, under an increased pressure with 130 DEG C of heating 1 hour, then with 175 DEG C of heating 5 hours.Pressurization when being heating and curing in particular by baking oven with 5kg/cm ²fill nitrogen to carry out.Opticmicroscope is used to observe from the glass surface side of the sample chip engaged.Use binaryzation software (WinRoof ver.5.6) to calculate space and observe area shared in image.Area shared by space is "○" relative to the average evaluation of surface-area less than 20% of die bonding film, be the average evaluation of more than 20% is "×".Result is shown in table 4.

[table 4]

[the 5th the present invention]

Following each embodiments etc. correspond to the 5th the present invention.

(embodiment 14)

The making > of < thermosetting die bonding film

9.5 part

1 part

0.2 part

60 parts

20 parts

By this adhesive composite solution coat carried out polysiloxane demoulding process, thickness is on the demoulding process film (release liner) be made up of pet film of 50 μm, then with 130 DEG C of dryings 2 minutes.Make the die bonding film A5 of thickness 25 μm thus.

(embodiment 15)

The making > of < thermosetting die bonding film

6.8 part

6.9 part

2.3 part

0.15 part

60 parts

25 parts

By this adhesive composite solution coat carried out polysiloxane demoulding process, thickness is on the demoulding process film (release liner) be made up of pet film of 50 μm, then with 130 DEG C of dryings 2 minutes.Make the die bonding film B5 of thickness 25 μm thus.

(embodiment 16)

The making > of < thermosetting die bonding film

6 parts

3 parts

0.15 part

60 parts

25 parts

By this adhesive composite solution coat carried out polysiloxane demoulding process, thickness is on the demoulding process film (release liner) be made up of pet film of 50 μm, then with 130 DEG C of dryings 2 minutes.Make the die bonding film C5 of thickness 25 μm thus.

(embodiment 17)

The making > of < thermosetting die bonding film

Make following (a) ~ (f) be dissolved in MEK (methylethylketone), the mode at room temperature reaching 150mPas with viscosity adjusts concentration, thus obtains adhesive composite solution.

7.3 part

0.4 part

0.15 part

60 parts

25 parts

By this adhesive composite solution coat carried out polysiloxane demoulding process, thickness is on the demoulding process film (release liner) be made up of pet film of 50 μm, then with 130 DEG C of dryings 2 minutes.Make the die bonding film D5 of thickness 25 μm thus.

(comparative example 9)

The die bonding film identical with embodiment 15 is made as the die bonding film E5 of comparative example 9.

It should be noted that, the median size of the filler entirety (spherical alumina filler A and spherical alumina filler B) in the die bonding film of embodiment, comparative example and the specific surface area of filler entirety as shown in table 5.In addition, filler is also shown in table 5 in the lump relative to the ratio of the thermoplastic resin of (in the total amount of thermosetting resin and thermoplastic resin) in the ratio of the thermosetting resin of (in the total amount of thermosetting resin and thermoplastic resin) in the loading level of die bonding film entirety, resinous principle, resinous principle.

(mensuration of the melt viscosity at 130 DEG C)

Determine the melt viscosity at before thermofixation 130 DEG C of die bonding film A5 ~ E5.Measure and use rheometer (HAAKE Inc., RS-1), utilize parallel plate method to carry out.That is, take 0.1g as sample from each die bonding film A5 ~ E5, this sample is fed intake to the plate being heated to 130 DEG C in advance.Melt viscosity is set to the value from measuring and starting after 300 seconds.In addition, shearing rate is set to 5 seconds ^-1, the gap between plate is set to 0.1mm.Result is shown in following table 5.

(mensuration of thermal conductivity)

Carry out the mensuration of the thermal conductivity after the thermofixation of die bonding film A5 ~ E5.Thermal conductivity is obtained by following formula.Result is shown in table 5.It should be noted that, the thermal conductivity after thermofixation refers to 130 DEG C of heating 1 hour, then with the thermal conductivity of 175 DEG C of heating after 5 hours.

(thermal conductivity)=(thermal diffusivity) × (specific heat) × (proportion)

< thermal diffusivity >.

< specific heat >

< proportion >

(space evaluation)

Utilize heat lamination, the die bonding film A5 ~ E5 of thickness 25 μm is attached on the glass-chip of thickness 100 μm with the area of 10mm × 10mm, has made sample chip.

Then, by sample chip with 130 DEG C, 2kg, the condition in 2 seconds be engaged in BGA substrate (Japan Circuit Industrial CO., LTD system, goods name: CA-BGA (2), 10 mean roughness (Rz)=11 ~ 13 μm in surface).Thereafter, in embodiment 14 ~ 17, under an increased pressure with 130 DEG C of heating 1 hour, then with 175 DEG C of heating 5 hours.Pressurization when being heating and curing in particular by baking oven with 5kg/cm ²fill nitrogen to carry out.In addition, in comparative example 9, under atmospheric pressure with 130 DEG C of heating 1 hour, then with 175 DEG C of heating 5 hours.Opticmicroscope is used to observe from the glass surface side of the sample chip engaged.Use binaryzation software (WinRoof ver.5.6) to calculate space and observe area shared in image.Area shared by space is "○" relative to the average evaluation of surface-area less than 20% of die bonding film, be the average evaluation of more than 20% is "×".Result is shown in table 5.

(moisture absorption Reflow Soldering test)

Use heat lamination, by the silicon that the die bonding film A5 ~ E5 of thickness 25 μm is attached at thickness 50 μm, 10mm × 10mm, make the sample chip of microarray strip bonding film.Then, use chip bonding device (Arakawa Co., Ltd.'s system, SPA-300) by the sample chip of microarray strip bonding film with 130 DEG C, 2kg, the condition in 2 seconds be engaged in BGA substrate (Japan Circuit Industrial CO., LTD system, goods name: CA-BGA (2), 10 mean roughness (Rz)=11 ~ 13 μm in surface).Thereafter, in embodiment 14 ~ 17, under an increased pressure with 130 DEG C of heating 1 hour, then with 175 DEG C of heating 5 hours.Pressurization when being heating and curing in particular by baking oven with 5kg/cm ²fill nitrogen to carry out.In addition, in comparative example 9, under atmospheric pressure with 130 DEG C of heating 1 hour, then with 175 DEG C of heating 5 hours.

Then, use potting resin (Hitachi Chemical Co., Ltd.'s system, GE-100), carry out molding with the condition of carrying out at 175 DEG C 90 seconds, thereafter, carry out the heating of 5 hours with 175 DEG C, potting resin is solidified.

Then, centered by silicon, monolithic changes into the size of thickness 0.7mm, 16mm × 16mm, with 85 DEG C and the condition moisture absorption 168 hours of humidity 60%RH.

According to JEDEC specification, the sample through moisture absorption is carried out to the IR Reflow Soldering in 30 seconds with 260 DEG C.Observe the sample after Reflow Soldering by ultrasonic measurement device (Hitachi Power Solutions Co., Ltd. system, FineSAT), observe whether there is delamination (stripping of die bonding film and BGA substrate).9 evaluations are respectively carried out to each embodiment, comparative example, even if be also evaluated as "×" when observing 1 delamination, 1 delamination is evaluated as "○" when also not observing.Result is shown in table 5.

[table 5]

Claims

1. a thermosetting die bonding film, is characterized in that, its thermal conductivity after thermofixation is more than 1W/mK,

2. thermosetting die bonding film according to claim 1, is characterized in that, the median size of described thermal conductive particle is more than 1 μm and less than 10 μm.

3. thermosetting die bonding film according to claim 1, is characterized in that, it contains thermoplastic resin and thermosetting resin,

By described thermosetting resin containing weight part be designated as A, by described thermoplastic resin containing weight part be designated as B time, A/B is more than 5.

4. thermosetting die bonding film according to claim 3, is characterized in that, described thermosetting resin comprises the thermosetting resin that softening temperature is less than 100 DEG C.

5. thermosetting die bonding film according to claim 3, is characterized in that, described thermosetting resin comprises the thermosetting resin be at room temperature in a liquid state.

6. a manufacture method for semiconductor device, is characterized in that, it comprises following operation:

Prepare the operation of the thermosetting die bonding film according to any one of Claims 1 to 5; And

Clip described thermosetting die bonding film, by semi-conductor chip chip join to the chip join operation on adherend.

7. the die bonding film with cutting blade, is characterized in that, it is stacked thermosetting die bonding film of having the right according to any one of requirement 1 ~ 5 on cutting blade, and described cutting blade is folded at layers on substrates binder layer.

8. a manufacture method for semiconductor device, is characterized in that, it comprises following operation:

Prepare the operation of the die bonding film of band cutting blade according to claim 7;

The thermosetting die bonding film of the die bonding film of described band cutting blade and the back side of semiconductor crystal wafer are carried out the bonding process of fitting;

Described semiconductor crystal wafer is cut together with described thermosetting die bonding film, forms the cutting action of the semi-conductor chip of shaped like chips;

By described semi-conductor chip together with described thermosetting die bonding film from the pickup process that the die bonding film of described band cutting blade picks up; And

Clip described thermosetting die bonding film, by described semi-conductor chip chip join to the chip join operation on adherend.