KR20140142676A - Thermosetting die-bonding film, die-bonding film with dicing sheet, and process for producing semiconductor device - Google Patents

Thermosetting die-bonding film, die-bonding film with dicing sheet, and process for producing semiconductor device Download PDF

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KR20140142676A
KR20140142676A KR1020140067866A KR20140067866A KR20140142676A KR 20140142676 A KR20140142676 A KR 20140142676A KR 1020140067866 A KR1020140067866 A KR 1020140067866A KR 20140067866 A KR20140067866 A KR 20140067866A KR 20140142676 A KR20140142676 A KR 20140142676A
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bonding film
die bonding
die
film
resin
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KR1020140067866A
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Korean (ko)
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유타 기무라
사다히토 미스미
겐지 오니시
유키 스고
유이치로 시시도
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닛토덴코 가부시키가이샤
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Priority claimed from JP2013118065A external-priority patent/JP6366228B2/en
Priority claimed from JP2013130272A external-priority patent/JP2015005636A/en
Priority claimed from JP2013241297A external-priority patent/JP2015103577A/en
Priority claimed from JP2013241306A external-priority patent/JP6505362B2/en
Priority claimed from JP2013241309A external-priority patent/JP2015103582A/en
Priority claimed from JP2013241294A external-priority patent/JP2015103576A/en
Priority claimed from JP2013241302A external-priority patent/JP2015103579A/en
Application filed by 닛토덴코 가부시키가이샤 filed Critical 닛토덴코 가부시키가이샤
Publication of KR20140142676A publication Critical patent/KR20140142676A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

The present invention provides a high thermal conductive thermosetting die bonding film, a die bonding film with a dicing sheet using a thermosetting die bonding film, and a method of manufacturing a semiconductor device.
The present invention relates to a heat-curable die-bonding film comprising thermally conductive particles, wherein the thermally conductive particles are surface-treated with a silane coupling agent, the content of the thermally conductive particles is 75 wt% And a thermal conductivity of 1 W / m · K or higher after the heat-curing die-bonding film.

Description

TECHNICAL FIELD [0001] The present invention relates to a thermosetting die-bonding film, a die-bonding film with a dicing sheet, and a method of manufacturing a semiconductor device,

The present invention relates to a thermosetting die-bonding film, a die-bonding film with a dicing sheet, and a method of manufacturing a semiconductor device.

2. Description of the Related Art In recent years, as the speed of data processing in semiconductor devices has increased, the amount of heat generated from semiconductor chips has increased, and the importance of designing semiconductor devices having heat dissipation has increased. Heat adversely affects not only the semiconductor device itself but also the main body of the electronic device into which it is inserted. There are various ways to cope with the package for heat radiation, but the most important thing is heat radiation when a substrate such as a printed board or a lead frame is interposed.

Therefore, conventionally, an adhesive having high thermal conductivity may be used for bonding a substrate and a semiconductor chip. As a conventional adhesive, a silver paste having a relatively high thermal conductivity among adhesives is used.

In recent years, however, smart phones and tablet PCs have become popular and have become more sophisticated. As semiconductor devices have become thinner and shorter, it has become more difficult to assemble semiconductor devices with silver paste.

Specifically, for a smart phone or a tablet PC, a package using a thin semiconductor chip having a small chip area is used. However, if such a semiconductor chip is attempted to be adhered with a paste-like adhesive, various manufacturing problems such as breakage of the semiconductor chip due to the thinness of the semiconductor chip, penetration of the adhesive onto the circuit surface of the semiconductor chip, Occurs. In addition, the paste-like adhesive tends to generate voids during the process of bonding and curing. As a result, the voids generated between the semiconductor chip and the substrate interfere with the heat dissipation, resulting in failure such that the thermal conductivity (heat dissipation property) as designed can not be exhibited.

On the other hand, sheet-like die-bonding films are known (see, for example, Patent Document 1). When such a die-bonding film is used, cracking of the chip, penetration of the adhesive, and inclination of the chip can be suppressed. However, the conventional die-bonding film has a room for improvement in that it has a lower thermal conductivity than silver paste.

Japanese Patent Application Laid-Open No. 2008-218571

In order to make the die bonding film highly heat conductive, a method of highly charging the thermally conductive particles is considered. However, since the thermally conductive particles are hardly dispersed in the resin, it is difficult to sufficiently heat the thermally conductive particles.

The first object of the present invention is to provide a method of manufacturing a semiconductor device and a die bonding film with a dicing sheet using a thermosetting thermosetting die bonding film, a thermosetting die bonding film, have.

The inventors of the present invention have studied a thermosetting die-bonding film in order to solve the aforementioned conventional problems. As a result, it has been found that by adopting the following constitution, the thermally conductive particles can be filled up and the thermal conductivity can be enhanced, thereby completing the first aspect of the present invention.

The first aspect of the present invention is a heat-curable die-bonding film comprising thermally conductive particles, wherein the thermally conductive particles are surface-treated with a silane coupling agent, the content of the thermally conductive particles is at least 75% And a thermal conductivity after heat curing of 1 W / m · K or more.

In the first aspect of the present invention, since the thermally conductive particles surface-treated with the silane coupling agent are used, the dispersibility of the thermally conductive particles can be increased, and the thermally conductive particles can be filled up. Therefore, a high thermal conductivity is obtained.

The thermal conductivity of the thermally conductive particles is preferably 12 W / m · K or more. As a result, a high thermal conductivity can be obtained.

The silane coupling agent includes a hydrolyzable group, and the hydrolyzable group is preferably a methoxy group and / or an ethoxy group.

The silane coupling agent includes an organic functional group, and the organic functional group preferably includes at least one selected from the group consisting of an acrylic group, a methacrylic group, an epoxy group, and a phenylamino group.

It is preferable that the silane coupling agent does not contain a primary amino group, a mercapto group and an isocyanate group.

And the melt viscosity at 130 캜 is preferably 300 Pa · s or less. Since the fluidity at a general die bonding temperature (120 ° C to 130 ° C) is high, it is possible to follow the unevenness of an adherend such as a printed wiring board, and the occurrence of voids can be suppressed. Therefore, a semiconductor device with less voids and excellent heat dissipation can be obtained.

The thickness of the thermosetting die-bonding film is preferably 50 占 퐉 or less.

The first aspect of the present invention is also directed to a method of manufacturing a semiconductor device including the step of preparing the thermosetting die bonding film and the step of die bonding the semiconductor chip onto the adherend via the thermosetting die bonding film will be.

The first aspect of the present invention also relates to a die-bonding film with a dicing sheet in which the thermosetting die-bonding film is laminated on a dicing sheet having a pressure-sensitive adhesive layer laminated on a substrate.

The first aspect of the present invention is a method for manufacturing a semiconductor device, comprising the steps of: preparing the die bonding film with the dicing sheet; bonding the back surface of the semiconductor wafer to the thermosetting die bonding film of the die bonding film with the dicing sheet; Bonding the semiconductor die with the thermosetting die-bonding film to form a semiconductor chip on the chip; picking up the semiconductor chip together with the thermosetting die-bonding film from the die-bonding film with the dicing sheet; And a step of die-bonding the semiconductor chip onto an adherend via the thermosetting die-bonding film.

According to the present invention, it is possible to provide a high thermal conductive thermosetting die bonding film, a die bonding film with a dicing sheet using a thermosetting die bonding film, and a method of manufacturing a semiconductor device.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a die bonding film with a dicing sheet according to Embodiment 1. Fig.
2 is a schematic cross-sectional view showing a die bonding film with a dicing sheet according to a modification of the first embodiment.
3 is a schematic cross-sectional view for explaining the manufacturing method of the semiconductor device according to the first embodiment.
4 is a schematic cross-sectional view showing a die bonding film with a dicing sheet according to the second embodiment.
5 is a schematic cross-sectional view showing a die bonding film with a dicing sheet according to a modification of the second embodiment.
6 is a cross-sectional schematic diagram showing a die bonding film with a dicing sheet according to Embodiment 3;
7 is a schematic cross-sectional view showing a die bonding film with a dicing sheet according to a modification of the third embodiment.
8 is a schematic cross-sectional view showing a die bonding film with a dicing sheet according to the fourth embodiment.
9 is a cross-sectional schematic diagram showing a die bonding film with a dicing sheet according to a modification of the fourth embodiment.
10 is a schematic cross-sectional view showing a die bonding film with a dicing sheet according to Embodiment 5. FIG.
11 is a schematic cross-sectional view showing a die bonding film with a dicing sheet according to a modification of the fifth embodiment.
12 is a schematic cross-sectional view for explaining the manufacturing method of the semiconductor device according to the fifth embodiment.

<< First Invention >>

Hereinafter, the first invention will be described in detail with reference to Embodiment Mode 1, but the first invention is not limited thereto.

[Embodiment 1]

(Die bonding film with dicing sheet)

The thermosetting die bonding film (hereinafter also referred to as &quot; die bonding film &quot;) according to Embodiment 1 and the die bonding film with a dicing sheet will be described below. The die bonding film according to Embodiment 1 is a die bonding film with a dicing sheet described below in which the dicing sheet is not bonded. Therefore, in the following, a die bonding film with a dicing sheet will be described, and a die bonding film will be described.

As shown in Fig. 1, the die bonding film 10 with a dicing sheet has a structure in which a thermosetting die bonding film 3 is laminated on a dicing sheet 11. As shown in Fig. The dicing sheet 11 is constituted by laminating a pressure-sensitive adhesive layer 2 on a substrate 1 and the die bonding film 3 is provided on the pressure-sensitive adhesive layer 2. [ The die bonding film 3 has a work attaching portion 3a for attaching a work and a peripheral portion 3b disposed around the work attaching portion 3a. As shown in Fig. 2, as a modified example, the die bonding film 12 with a dicing sheet having the die bonding film 3 'only at the work attachment portion may be used.

The base material (1) has ultraviolet transmittance and becomes a matrix of the die bonding films (10, 12) with a dicing sheet. Examples thereof include polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymerized polypropylene, homopolypropylene, polyurethane, polymethylpentene, ethylene- (Meth) acrylic acid ester (random, alternating) copolymer, an ethylene-butene copolymer, an ethylene-hexene copolymer, a polyurethane, a polyethylene terephthalate, a polyethylene Polyamide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenyl sulfide, aramid (paper), glass, glass cloth (such as polyamide, cloth, a fluororesin, a polyvinyl chloride, a polyvinylidene chloride, a cellulose resin , Silicone resin, metal (foil), paper and the like.

As the material of the substrate 1, a polymer such as a crosslinked product of the above-mentioned resin can be mentioned. The above plastic film may be used in a non-stretched state, or may be one obtained by stretching uniaxial or biaxial stretching, if necessary. According to the resin sheet to which heat shrinkability is imparted by stretching treatment or the like, the adhesive area of the pressure-sensitive adhesive layer 2 and the die bonding films 3 and 3 'is reduced by thermally shrinking the substrate 1 after dicing, Can be facilitated.

The surface of the base material 1 is subjected to chemical or physical treatments such as surface treatments for tolerance, such as chromium acid treatment, ozone exposure, flame exposure, high voltage exposure, ionizing radiation treatment, and the like, A coating treatment with an undercoating agent (for example, an adhesive substance described later) can be carried out. The base material (1) may be selected from homogeneous or heterogeneous materials suitably, and blended with various kinds of materials may be used if necessary.

The thickness of the substrate 1 is not particularly limited and can be suitably determined, but is generally about 5 to 200 mu m.

The pressure-sensitive adhesive to be used for forming the pressure-sensitive adhesive layer (2) is not particularly limited, and general pressure-sensitive pressure-sensitive adhesives such as an acrylic pressure-sensitive adhesive and a rubber pressure-sensitive adhesive can be used. As the above pressure-sensitive adhesive, an acrylic pressure-sensitive adhesive using an acrylic polymer as a base polymer is preferable from the viewpoints of ultrapure water of an electronic component that is not susceptible to contamination of a semiconductor wafer or glass, or clean cleaning property by an organic solvent such as alcohol.

Examples of the acrylic polymer include (meth) acrylic acid alkyl esters such as methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, But are not limited to, esters, hexyl esters, heptyl esters, octyl esters, 2-ethylhexyl esters, isooctyl esters, nonyl esters, decyl esters, isodecyl esters, undecyl esters, dodecyl esters, tridecyl esters, Linear or branched alkyl esters having 1 to 30 carbon atoms, particularly 4 to 18 carbon atoms, of alkyl groups such as ester, octadecyl ester and eicosyl ester) and (meth) acrylic acid cycloalkyl esters (such as cyclopentyl ester, cyclohexyl Ester or the like) as the monomer component, or the like. There. On the other hand, the (meth) acrylic acid ester refers to an ester of an acrylic acid ester and / or methacrylic acid, and in the present specification, the term "(meth)" has the same meaning.

The acrylic polymer may contain units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or the cycloalkyl ester, if necessary, for the purpose of modifying the cohesive force, heat resistance and the like. Examples of the monomer component include carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid and crotonic acid; Acid anhydride monomers such as maleic anhydride and itaconic anhydride; (Meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl Hydroxyl group-containing monomers such as (meth) acrylic acid 10-hydroxydecyl, (meth) acrylic acid 12-hydroxylauryl and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; (Meth) acrylamidopropane sulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxy (meth) acrylamide, Sulfonic acid group-containing monomers such as naphthalene sulfonic acid; Phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; Acrylamide, acrylonitrile, and the like. These copolymerizable monomer components may be used alone or in combination of two or more. The amount of these copolymerizable monomers to be used is preferably 40% by weight or less based on the total monomer components.

Further, in order to crosslink the acryl-based polymer, a multi-functional monomer or the like may be included as a monomer component for copolymerization, if necessary. Examples of such a polyfunctional monomer include hexane diol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (Meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, Polyester (meth) acrylate, and urethane (meth) acrylate. These multifunctional monomers may be used alone or in combination of two or more. The amount of the multifunctional monomer to be used is preferably 30% by weight or less based on the total amount of the monomer components from the viewpoint of adhesion properties and the like.

The acrylic polymer is obtained by bringing a single monomer or a mixture of two or more monomers into polymerization. The polymerization can be carried out by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. It is preferable that the content of the low molecular weight substance is small in view of prevention of contamination to a clean adherend. In this respect, the number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably about 200,000 to 3,000,000, and particularly preferably about 300,000 to 1,000,000.

To the pressure-sensitive adhesive, an external crosslinking agent may be suitably employed in order to increase the number-average molecular weight of the acryl-based polymer as the base polymer. Specific examples of the external crosslinking method include a method in which a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent is added and reacted. When an external crosslinking agent is used, the amount thereof to be used is appropriately determined according to the balance with the base polymer to be crosslinked, and further, depending on the intended use as a pressure-sensitive adhesive. Generally, about 5 parts by weight or less, more preferably 0.1 to 5 parts by weight, based on 100 parts by weight of the base polymer is preferably blended. In addition to the above components, additives known in the art such as various tackifiers and anti-aging agents may be used for the pressure-sensitive adhesive, if necessary.

The pressure-sensitive adhesive layer (2) can be formed by a radiation-curable pressure-sensitive adhesive. The radiation-curing pressure-sensitive adhesive can increase the degree of crosslinking by irradiation with ultraviolet rays or the like to easily lower the adhesive force thereof and irradiate only the portion 2a corresponding to the work-attaching portion of the pressure-sensitive adhesive layer 2 shown in Fig. 2 It is possible to provide a difference in adhesion with the other portion 2b.

Further, by hardening the radiation-curable pressure-sensitive adhesive layer 2 in accordance with the die-bonding film 3 'shown in Fig. 2, the portion 2a with a remarkably reduced adhesive force can be easily formed. The interface between the portion 2a of the pressure-sensitive adhesive layer 2 and the die-bonding film 3 'is formed at the time of picking-up, because the die bonding film 3' And easily peeled off. On the other hand, the portion not irradiated with radiation has a sufficient adhesive force to form the portion 2b. On the other hand, the irradiation of the pressure sensitive adhesive layer may be performed before dicing and before picking up.

As described above, in the pressure-sensitive adhesive layer 2 of the die bonding film 10 with a dicing sheet shown in Fig. 1, the portion 2b formed by the uncured radiation-curable pressure- The film 3 is adhered to the film 3, and the holding force at the time of dicing can be ensured. As described above, the radiation-curing pressure-sensitive adhesive can support the die bonding film 3 for fixing the chipped work (semiconductor chip or the like) to an adherend such as a substrate with good balance of adhesion and peeling. In the pressure-sensitive adhesive layer 2 of the die bonding film 11 with the dicing sheet shown in Fig. 2, the portion 2b can fix the wafer ring.

The radiation-curable pressure-sensitive adhesive can be used without any particular limitation, which has a radiation-curable functional group such as a carbon-carbon double bond and exhibits adhesiveness. As the radiation-curable pressure-sensitive adhesive, there can be exemplified an addition-type radiation-curable pressure-sensitive adhesive in which a radiation-curable monomer component or an oligomer component is blended with a common pressure-sensitive adhesive such as the acrylic pressure-sensitive adhesive and the rubber pressure-

Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri Acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di . Examples of the radiation-curable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based oligomers, and the molecular weight thereof is suitably in the range of about 100 to 30,000. The amount of the radiation-curable monomer component or the oligomer component can be appropriately determined depending on the type of the pressure-sensitive adhesive layer so that the adhesive force of the pressure-sensitive adhesive layer can be lowered. Generally, it is about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight, based on 100 parts by weight of the base polymer such as acrylic polymer constituting the pressure-sensitive adhesive.

Examples of the radiation-curable pressure-sensitive adhesive include, in addition to the addition-type radiation-curable pressure-sensitive adhesive described above, an internal radiation-curable pressure-sensitive adhesive using a base polymer having a carbon-carbon double bond at the polymer side chain or main chain or at the main chain end. Since the intrinsic type radiation-curing pressure-sensitive adhesive does not need to contain or contain a low molecular weight oligomer component or the like, the oligomer component or the like does not move in the pressure-sensitive adhesive over time, Sensitive adhesive layer can be formed.

The base polymer having a carbon-carbon double bond may have a carbon-carbon double bond and may be used without any particular limitation. As such a base polymer, an acrylic polymer is preferably used as a basic skeleton. Examples of the basic skeleton of the acrylic polymer include the acrylic polymer exemplified above.

The method for introducing a carbon-carbon double bond to the acryl-based polymer is not particularly limited, and various methods can be adopted, but it is easy to introduce a carbon-carbon double bond into a polymer side chain in terms of molecular design. For example, after a monomer having a functional group is copolymerized in advance with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is condensed or added with maintaining the radiation curability of the carbon- .

Examples of combinations of these functional groups include a carboxylic acid group and an epoxy group, a carboxylic acid group and an aziridyl group, and a hydroxyl group and an isocyanate group. Among the combinations of these functional groups, a combination of a hydroxyl group and an isocyanate group is suitable from the viewpoint of easy tracking of the reaction. The functional group may be present either on the acrylic polymer or on either side of the compound, provided that the combination of these functional groups is such as to produce the acrylic polymer having the carbon-carbon double bond. In the above preferred combination, The compound having an actual group and having an isocyanate group is suitable. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, Dimethyl benzyl isocyanate, and the like. As the acrylic polymer, a copolymer obtained by copolymerizing a hydroxyl group-containing monomer, the 2-hydroxyethyl vinyl ether, the 4-hydroxybutyl vinyl ether, the diethylene glycol monovinyl ether, and the like can be used.

The above-mentioned internal-type radiation-curable pressure-sensitive adhesive may use the above-mentioned base polymer having a carbon-carbon double bond (in particular acrylic polymer) alone, but may also contain the above-mentioned radiation-curable monomer component or oligomer component to such an extent that the properties are not deteriorated . The radiation-curable oligomer component and the like are usually in the range of 30 parts by weight, preferably 0 to 10 parts by weight, based on 100 parts by weight of the base polymer.

The radiation-curable pressure-sensitive adhesive contains a photopolymerization initiator when it is cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone,? -Hydroxy- ?,? '- dimethylacetophenone, 1-hydroxycyclohexyl phenyl ketone, and the like; Methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) An acetophenone-based compound such as polynaphropene-1; Benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether; Ketal compounds such as benzyl dimethyl ketal; Aromatic sulfonyl chloride-based compounds such as 2-naphthalenesulfonyl chloride; A photoactive oxime-based compound such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; Benzophenone compounds such as benzophenone, benzoylbenzoic acid and 3,3'-dimethyl-4-methoxybenzophenone; 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethyl Thioazane compounds such as thioxanthone and 2,4-diisopropylthioxanthone; Campquinone; Halogenated ketones; Acylphosphine oxides; Acylphosphonates, and the like. The blending amount of the photopolymerization initiator is, for example, about 0.05 to 20 parts by weight relative to 100 parts by weight of the base polymer such as acrylic polymer constituting the pressure-sensitive adhesive.

Examples of the radiation-curing pressure-sensitive adhesive include a pressure-sensitive adhesive compound disclosed in Japanese Patent Application Laid-open No. 60-196956, a photopolymerizable compound such as an addition polymerizable compound having two or more unsaturated bonds, an alkoxysilane having an epoxy group, , An organic sulfur compound, a peroxide, an amine, and an onium salt-based compound, and an acrylic pressure-sensitive adhesive.

The radiation-curable pressure-sensitive adhesive layer (2) may contain a compound that is colored by radiation if necessary. By incorporating a compound that is colored by irradiation with radiation in the pressure-sensitive adhesive layer (2), only the irradiated portion can be colored. That is, the portion 2a corresponding to the work attaching portion 3a shown in Fig. 1 can be colored. Therefore, whether or not the pressure-sensitive adhesive layer 2 is irradiated with radiation can be immediately determined by the naked eye, and it is easy to recognize the work-attaching portion 3a, and the work can be easily joined. Further, when a semiconductor chip is detected by an optical sensor or the like, its detection accuracy is enhanced, and malfunctions do not occur during pickup of the semiconductor chip.

The compound that is colored by irradiation with light is a colorless or pale color before irradiation, but a compound that becomes colored by irradiation with radiation. Preferable specific examples of such compounds include leuco dyes. As leuco dyes, triphenylmethane-based, fluorene-based, phenothiazine-based, aramine-based, and spiropyran-based ones are preferably used. Specific examples thereof include 3- [N- (p-tolylamino)] - 7-anilinofluorene, 3- [N- (p- tolyl) Anilinofluoresin, crystal violet lactone, 4,4 ', 4 "-methyl-6-methyl-7- -Tris dimethylaminotriphenylmethanol, 4,4 ', 4 "-trisdimethylaminotriphenylmethane, and the like.

As the developing agent preferably used together with these leuco dyes, conventionally used electron acceptors such as an initial polymer, an aromatic carboxylic acid derivative, and activated clay of a phenol formalin resin can be exemplified. Further, Various known coloring agents may be used in combination.

Such a compound that is colored by irradiation with radiation may be contained in the radiation curable adhesive once dissolved in an organic solvent or the like, or may be contained in the pressure sensitive adhesive in the form of a fine powder. The use ratio of the compound is preferably 10% by weight or less, preferably 0.01 to 10% by weight, more preferably 0.5 to 5% by weight in the pressure-sensitive adhesive layer (2). If the proportion of the compound exceeds 10% by weight, the radiation irradiated onto the pressure-sensitive adhesive layer 2 is excessively absorbed by the compound, so that the curing of the portion 2a of the pressure-sensitive adhesive layer 2 becomes insufficient, May not be lowered. On the other hand, in order to sufficiently color, the proportion of the compound is preferably 0.01% by weight or more.

In the case where the pressure-sensitive adhesive layer 2 is formed by a radiation-curing pressure-sensitive adhesive, the pressure-sensitive adhesive layer 2 is formed so that the pressure-sensitive adhesive layer 2 has an adhesive force of the portion 2a and an adhesive force of the other portion 2b. A part may be irradiated with radiation.

As a method for forming the portion 2a on the pressure-sensitive adhesive layer 2, a radiation-curable pressure-sensitive adhesive layer 2 is formed on the supporting substrate 1, and then the portion 2a is irradiated with radiation partially, . The partial irradiation with radiation can be performed through a photomask having a pattern corresponding to the portion 3b or the like other than the work attaching portion 3a. And a method of partially curing by irradiating ultraviolet light. The radiation-curable pressure-sensitive adhesive layer 2 can be formed by transferring the pressure-sensitive adhesive layer 2 provided on the separator onto the supporting base material 1. The partial radiation curing may be performed on the radiation curable pressure sensitive adhesive layer 2 provided on the separator.

When the pressure-sensitive adhesive layer 2 is formed by a radiation-curing pressure-sensitive adhesive, it is also possible to use at least one surface of the supporting substrate 1 which is shielded from all or a part of the surface except for the portion corresponding to the work- , A radiation curable pressure sensitive adhesive layer 2 is formed thereon and then irradiated with radiation to cure the portion corresponding to the work attaching portion 3a to form the portion 2a with reduced adhesive force. As the light-shielding material, what can be a photomask on the support film can be formed by printing, vapor deposition or the like. According to this manufacturing method, the die bonding film 10 with a dicing sheet can be efficiently produced.

On the other hand, when curing inhibition by oxygen occurs at the time of irradiation with radiation, it is preferable to block oxygen (air) from the surface of the radiation-curable pressure-sensitive adhesive layer 2 by any method. For example, a method of covering the surface of the pressure-sensitive adhesive layer 2 with a separator or a method of irradiating radiation such as ultraviolet rays in a nitrogen gas atmosphere can be given.

The thickness of the pressure-sensitive adhesive layer (2) is not particularly limited, but is preferably about 1 to 50 占 퐉 from the viewpoints of prevention of breakage of the chip cut surface and compatibility of fixation and maintenance of the adhesive layer. Preferably 2 to 30 mu m, further preferably 5 to 25 mu m.

 The melt viscosity of the die-bonding films 3, 3 'at 130 캜 is preferably 300 Pa · s or less, more preferably 280 Pa · s or less, and further preferably 250 Pa · s or less. When the viscosity is 300 Pa · s or less, the fluidity at a general die bonding temperature (120 ° C. to 130 ° C.) is high, and it is possible to follow the unevenness of an adherend such as a printed wiring board and the occurrence of voids can be suppressed. The melt viscosity at 130 캜 is preferably 10 Pa · s or more, more preferably 20 Pa · s or more, and further preferably 50 Pa · s or more. If it is 10 Pa · s or more, the shape of the film can be maintained.

On the other hand, the melt viscosity at 130 캜 refers to a value obtained by setting the shear rate to 5 (1 / sec) as a measurement condition.

The melt viscosity of the die bonding films 3, 3 'at 130 캜 can be controlled by the average particle diameter of the thermally conductive particles, the softening point of the epoxy resin, and the softening point of the phenolic resin. For example, by setting the average particle diameter of the thermally conductive particles to a large value, by decreasing the softening point of the epoxy resin, and by decreasing the softening point of the phenol resin, the melt viscosity at 130 ° C can be reduced.

The die bonding films 3 and 3 'preferably have a thermal conductivity after heat curing of 1 W / m · K or more, preferably 1.2 W / m · K or more, and more preferably 1.5 W / m · K or more. Since the thermal conductivity after heat curing is 1 W / m · K or more, the semiconductor device manufactured using the die bonding films 3 and 3 'is excellent in heat radiation. On the other hand, the larger the thermal conductivity of the die bonding films 3, 3 'after the thermal curing, the more preferable is 20 W / mK or less.

The "thermal conductivity after heat curing" refers to the thermal conductivity after heating at 130 ° C for 1 hour and then heating at 175 ° C for 5 hours.

The die bonding films 3 and 3 'include thermally conductive particles surface-treated (pretreated) with a silane coupling agent. The surface-treated thermally conductive particles are excellent in dispersibility and can be filled up to the die bonding films 3 and 3 '.

The silane coupling agent preferably includes a silicon atom, a hydrolyzable group and an organic functional group.

The hydrolyzable group is bonded to a silicon atom.

Examples of the hydrolyzable group include a methoxy group and an ethoxy group. Among them, a methoxy group is preferable because of its high hydrolysis rate and easy processing.

The number of hydrolyzable groups in the silane coupling agent can be crosslinked with the silane coupling agents while being crosslinked with the thermally conductive particles and even if the cross-linking points of the surfaces of the thermally conductive particles are small, the entire thermally conductive particles are surface treated with the silane coupling agent Preferably from 2 to 3, more preferably from 3, in view of being capable of forming a film.

The organic functional group is bonded to a silicon atom.

Examples of the organic functional group include an acryl group, a methacryl group, an epoxy group, a phenylamino group (-NH-Ph), and the like. Among them, an acrylic group is preferable because it has no reactivity with an epoxy resin and has good storage stability of the thermally conductive particles treated.

On the other hand, if a functional group having a high reactivity with an epoxy group is present, it will react with the epoxy resin, resulting in deterioration of storage stability and fluidity. From the standpoint of suppressing the deterioration of fluidity, it is preferable that the organic functional group does not include a primary amino group, a mercapto group or an isocyanate group.

The number of organic functional groups in the silane coupling agent is preferably one. Since silicon atoms make four bonds, the number of hydrolysis groups is insufficient when the number of organic functional groups is large.

The silane coupling agent may further contain an alkyl group bonded to the silicon atom. When the silane coupling agent contains an alkyl group, the reactivity can be made lower than that of the methacrylic group, and deflection of the surface treatment due to abrupt reaction can be prevented. Examples of the alkyl group include a methyl group and a dimethyl group. Among them, a methyl group is preferable.

Specific examples of the silane coupling agent include 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxy But are not limited to, silane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, methyltrimethoxysilane 3-aminopropyltrimethoxysilane, 3-methacryloxypropyldimethoxysilane, 3-methacryloxypropyldimethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, N-phenyl- Methacryloxypropyltrimethoxysilane, 3-methacryloxypropyldimethoxysilane, 3-methacryloxypropyltriethoxysilane, and the like can be given.

The method of treating the thermally conductive particles with a silane coupling agent is not particularly limited and includes a wet method in which thermally conductive particles and a silane coupling agent are mixed in a solvent, a dry method in which thermally conductive particles and a silane coupling agent are treated in a gas phase .

The throughput of the silane coupling agent is not particularly limited, but it is preferable to treat the silane coupling agent in an amount of 0.05 to 5 parts by weight based on 100 parts by weight of the thermally conductive particles.

The thermal conductivity of the thermally conductive particles is preferably 12 W / m · K or more, and more preferably 20 W / m · K or more. The upper limit of the thermal conductivity of the thermally conductive particles is not particularly limited and is, for example, 50 W / mK or less, preferably 30 W / mK or less.

On the other hand, the thermal conductivity of the thermally conductive particles can be estimated from the crystal structure of the thermally conductive particles obtained by the X-ray structure analysis.

The average particle diameter of the thermally conductive particles is preferably 1 占 퐉 or more, and more preferably 1.5 占 퐉 or more. Since the thickness is 1 mu m or more, the fluidity at 120 DEG C to 130 DEG C can be increased. The average particle diameter of the thermally conductive particles is preferably 10 占 퐉 or less, and more preferably 8 占 퐉 or less. Since the thickness is 10 μm or less, good film formability can be obtained.

On the other hand, the average particle diameter of the thermally conductive particles can be measured by the method described in Examples.

It is preferable that two or more peaks are present in the particle size distribution of the thermally conductive particles. Specifically, it is preferable that a first peak exists in a particle diameter range of 0.2 to 0.8 占 퐉, and a second peak exists in a particle diameter range of 3 to 15 占 퐉. Thus, the thermally conductive particles forming the first peak can be filled between the thermally conductive particles forming the second peak (gap), so that the thermally conductive particles can be filled up.

If the particle size of the first peak is less than 0.2 탆, the viscosity of the die bonding films 3 and 3 'becomes high, and thus it tends to be unable to follow the unevenness of the adherend. If the particle size of the first peak exceeds 0.8 mu m, it is liable that it becomes difficult to call the hot conductive particles.

If the particle diameter of the second peak is less than 3 占 퐉, it tends to be difficult to call the hot conductive particles. Further, the viscosity of the die-bonding films 3 and 3 'becomes too high, and it tends to be unable to follow the unevenness of the adherend. If the particle diameter of the second peak exceeds 15 mu m, it becomes difficult to make the die bonding films 3 and 3 'thinner.

And the second peak is more preferably in the range of 4 to 8 占 퐉.

On the other hand, in order to present two or more peaks in the particle size distribution of the thermally conductive particles, two or more thermally conductive particles having different average particle diameters may be blended.

The shape of the thermally conductive particles is not particularly limited and may be, for example, a flake, needle, filament, spherical or scaly shape. The shape of the thermally conductive particle is preferably 0.9 or more, more preferably 0.95 or more. As a result, the contact area between the thermally conductive particles and the resin can be reduced, and the fluidity at 120 ° C to 130 ° C can be increased. On the other hand, Jingu-do indicates closer to Jingu-ji near 1.

On the other hand, the sphericity of the thermally conductive particles can be measured by the following method.

Measurement

The die bonding film is placed in a crucible, and is heat treated at 700 DEG C for 2 hours in an atmospheric atmosphere to be ashed. The obtained ash is photographed by SEM, and the sphericity is calculated from the area and the peripheral length of the observed particles by the following formula. On the other hand, for 100 particles, the sphericity is measured using an image processing apparatus (SISMEX Corporation: FPIA-3000).

(Jingudo) = {4 pi x (area) / (circumference length) 2 }

(Thermal conductivity: 36 W / m 占)), zinc oxide particles (thermal conductivity: 54 W / m 占)), aluminum nitride particles (thermal conductivity: (Thermal conductivity: 150W / m 占 K), silicon nitride particles (thermal conductivity: 27W / m 占)), silicon carbide particles (thermal conductivity: 200W / m 占)), magnesium oxide particles Particles (thermal conductivity: 60 W / m 占)) are preferable. Particularly, alumina particles are preferred because of their high thermal conductivity, dispersibility, and availability. In addition, since the boron nitride particles have a higher thermal conductivity, they can be suitably used.

The content of the thermally conductive particles is 75% by weight or more, preferably 80% by weight or more, and more preferably 85% by weight or more based on the entirety of the die-bonding films 3 and 3 '. Is at least 75% by weight, the semiconductor device manufactured using the die bonding films 3 and 3 'is excellent in heat dissipation. Further, the content of the thermally conductive particles is preferably as large as possible but not more than 93% by weight, for example, from the viewpoint of film formability.

The die bonding films 3 and 3 'preferably include a resin component such as a thermosetting resin or a thermoplastic resin.

Examples of the thermosetting resin include a phenol resin, an amino resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. These resins may be used alone or in combination of two or more. Particularly, an epoxy resin containing a small amount of ionic impurities which corrodes semiconductor chips is preferable. As the curing agent of the epoxy resin, a phenol resin is preferable.

The epoxy resin is not particularly limited as long as it is generally used as an adhesive for die bonding, and examples thereof include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, , Bifunctional epoxy resins or polyfunctional epoxy resins such as naphthalene type, fluorene type, phenol novolac type, orthocresol novolac type, tris hydroxyphenyl methane type and tetraphenylol ethane type, An epoxy resin such as glycidyl isocyanurate type or glycidyl amine type is used. These may be used alone or in combination of two or more. Among them, because of being liquid at room temperature, it is possible to impart flexibility to the die bonding films 3 and 3 'and to prevent the die bonding films 3 and 3' from becoming fragile, Type epoxy resin is preferable.

An epoxy resin which is in a liquid state at room temperature is preferable in that the fluidity at 120 ° C to 130 ° C can be enhanced.

In the present specification, the term "liquid phase" means that the viscosity at 25 ° C. is less than 5000 Pa · s. On the other hand, the viscosity can be measured using a model No. HAAKE Roto VISCO1 manufactured by Thermo Scientific.

The softening point of the epoxy resin is preferably 100 占 폚 or lower, more preferably 80 占 폚 or lower, and even more preferably 70 占 폚 or lower, since the fluidity at 120 占 폚 to 130 占 폚 can be increased.

On the other hand, the softening point of the epoxy resin can be measured by the ring method specified in JIS K 7234-1986.

The phenol resin acts as a curing agent for the epoxy resin. Examples thereof include phenol novolak resins, phenol aralkyl resins, cresol novolak resins, tert-butyl phenol novolac resins, and novolac phenol novolak resins. Resins, resole-type phenol resins, and polyoxystyrenes such as polyparaxyxystyrene. These may be used alone or in combination of two or more. Of these phenolic resins, phenol novolac resins and phenol aralkyl resins are particularly preferable. This is because connection reliability of the semiconductor device can be improved. In addition, a phenol resin having a biphenylaralkyl skeleton is preferable because it has a structure with a high crystallinity and rigidity to improve heat transfer.

The softening point of the phenol resin is preferably 100 占 폚 or lower, more preferably 80 占 폚 or lower because the fluidity at 120 占 폚 to 130 占 폚 can be increased.

On the other hand, the softening point of the phenol resin can be measured by the ring method specified in JIS K 6910-2007.

The mixing ratio of the epoxy resin to the phenol resin is preferably such that the hydroxyl group in the phenol resin is equivalent to 0.5 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component. More suitable is 0.8 to 1.2 equivalents. That is, if the mixing ratio of the two is out of the above range, sufficient curing reaction does not proceed and the properties of the epoxy resin cured product tend to deteriorate.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide Resin, a polyamide resin such as 6-nylon or 6,6-nylon, a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET or PBT, a polyamideimide resin, or a fluororesin. These thermoplastic resins may be used alone or in combination of two or more. Among these thermoplastic resins, an acrylic resin which is low in ionic impurities and high in heat resistance and can secure the reliability of a semiconductor chip is particularly preferable.

The acrylic resin is not particularly limited, and a polymer (acrylic copolymer) comprising one or two or more kinds of acrylic acid or methacrylic acid ester having a carbon number of 30 or less, particularly 4 to 18 carbon atoms having a linear or branched alkyl group, And the like. Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, A decyl group, an iso-decyl group, an undecyl group, a lauryl group, a tridecyl group, a tetradecyl group, a stearyl group, an octadecyl group or a dodecyl group, .

The other monomer forming the polymer is not particularly limited, and examples thereof include carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid and crotonic acid, (Meth) acrylic acid 2-hydroxyethyl, (meth) acrylic acid 2-hydroxypropyl, (meth) acrylic acid 4-hydroxybutyl, (meth) acrylic acid 6-hydroxysuccinimide (Hydroxymethylcyclohexyl) -methylacrylate and the like such as (meth) acrylic acid 8-hydroxyoctyl, (meth) acrylic acid 10-hydroxydecyl, (meth) acrylic acid 12- (Meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidopropane (meth) acrylamide, Acid, there may be mentioned the phosphoric acid group-containing monomers, such as sulfopropyl (meth) acrylate or (meth) sulfone, such as one oxy-naphthalene-sulfonic acid with an acrylic acid group-containing monomer, or 2-hydroxyethyl acryloyl phosphate.

The content of the resin component is preferably at least 7% by weight based on the entirety of the die-bonding films (3, 3 '). The content of the resin component is preferably 25% by weight or less, more preferably 20% by weight or less, and even more preferably 15% by weight or less, based on the entirety of the die bonding films 3 and 3 '.

The mixing ratio of the thermosetting resin in the resin component (the total amount of the thermosetting resin and the thermoplastic resin) is not particularly limited as long as the die bonding film (3, 3 ') exhibits a function as a thermosetting type when heated under a predetermined condition, Is preferably within a range of 75 to 99% by weight, and more preferably within a range of 85 to 98% by weight from the viewpoint of improving the flowability at a temperature of from room temperature to 130 [deg.] C.

The blending ratio of the thermoplastic resin in the resin component is preferably within a range of 1 to 25% by weight, and more preferably within a range of 2 to 15% by weight in view of increasing fluidity at 120 to 130 캜.

The die bonding film 3, 3 'preferably comprises a curing catalyst. Thus, thermal curing of the curing agent such as epoxy resin and phenol resin can be promoted. The curing catalyst is not particularly limited and examples thereof include tetraphenylphosphonium tetraphenylborate (trade name: TPP-K), tetraphenylphosphonium tetra-p-triborate (trade name: TPP-MK), triphenylphosphine triphenylborane Boron-based curing catalysts such as TPP-S (product name: TPP-S) (all manufactured by Hokko Chemical Industry Co., Ltd.). Among them, tetraphenylphosphonium tetra-p-triborate is preferable in view of high storage stability at room temperature because of high latency when an epoxy resin and a phenol resin are used in combination.

The content of the curing catalyst can be appropriately set, but is preferably 0.1 to 3 parts by weight, more preferably 0.5 to 2 parts by weight based on 100 parts by weight of the thermosetting resin.

When the die bonding films 3 and 3 'are cross-linked to some extent in advance, it is preferable to add a polyfunctional compound which reacts with functional groups at the molecular chain terminals of the polymer as a cross-linking agent. This makes it possible to improve the adhesive property under high temperature and to improve the heat resistance.

As the crosslinking agent, conventionally known ones can be employed. Particularly, it is possible to use a polyisocyanate such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, polyhydric alcohol and diisocyanate And polyisocyanate compounds such as adducts are more preferable. The amount of the crosslinking agent to be added is preferably 0.05 to 7 parts by weight per 100 parts by weight of the polymer. If the amount of the cross-linking agent is more than 7 parts by weight, the adhesive strength is undesirably low. On the other hand, if it is less than 0.05 part by weight, cohesive force is insufficient. If necessary, other polyfunctional compounds such as epoxy resins may be included together with such a polyisocyanate compound.

Further, the die bonding films 3 and 3 'may suitably contain fillers other than the thermally conductive particles depending on the use thereof. The compounding of the filler enables adjustment of the elastic modulus and the like. Examples of the filler include an inorganic filler and an organic filler. The inorganic filler is not particularly limited and includes, for example, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, aluminum borate whisker, crystalline silica and amorphous silica. These may be used alone or in combination of two or more.

On the other hand, in addition to the filler, other additives may be appropriately added to the die bonding films 3 and 3 ', if necessary. Examples of other additives include flame retardants, silane coupling agents, and ion trap agents. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resins. These may be used alone or in combination of two or more. As the silane coupling agent, for example,? - (3,4-epoxycyclohexyl) ethyltrimethoxysilane,? -Glycidoxypropyltrimethoxysilane,? -Glycidoxypropylmethyldiethoxysilane and the like . These compounds may be used alone or in combination of two or more. Examples of the ion trap agent include hydrotalcites and bismuth hydroxide. These may be used alone or in combination of two or more.

The lamination structure of the die bonding films 3 and 3 'is not particularly limited and may be a single layer of an adhesive layer or a multilayer structure in which an adhesive layer is formed on one or both sides of the core material. As the core material, a film (e.g., a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film or the like), a resin substrate reinforced with glass fiber or nonwoven fabric made of plastic, .

The thickness (total thickness in the case of the laminate) of the die bonding films 3 and 3 'is not particularly limited, but is preferably 1 탆 or more, more preferably 5 탆 or more, and further preferably 10 탆 or more . The thickness of the die bonding films 3 and 3 'is preferably 200 占 퐉 or less, more preferably 150 占 퐉 or less, further preferably 100 占 퐉 or less, particularly preferably 50 占 퐉 or less.

The die bonding films 10 and 12 with the dicing sheet are used for the generation of static electricity at the time of bonding and peeling of the substrate 1, the pressure-sensitive adhesive layer 2 and the die bonding films 3 and 3 ' Or to prevent the circuit from being destroyed by a charge of a semiconductor wafer or the like caused by the semiconductor wafer or the like. The provision of the antistatic function can be achieved by a method of adding an antistatic agent or a conductive material to the substrate 1, the pressure-sensitive adhesive layer 2 and the die bonding films 3 and 3 ' Or the like can be carried out in a suitable manner. These methods are preferable in a method in which impurity ions which may deteriorate the semiconductor wafer are hardly generated. Examples of the conductive material (conductive filler) blended for the purpose of imparting conductivity and improving the conductivity include spherical, needle-shaped, flaky metal powder such as silver, aluminum, gold, copper, nickel, and conductive alloy, amorphous carbon black, graphite And the like.

It is preferable that the die bonding films 3 and 3 'of the die bonding films 10 and 12 with a dicing sheet are protected by a separator (not shown). The separator has a function as a protecting material for protecting the die bonding films 3 and 3 'until it is provided for practical use. Further, the separator can be used as a supporting substrate for transferring the die bonding films 3 and 3 'to the pressure-sensitive adhesive layer 2 further. The separator is peeled off when the work is adhered on the die bonding films 3 and 3 'of the die bonding films 10 and 12 with the dicing sheet. As the separator, a plastic film or paper surface-coated with a releasing agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine-based releasing agent, or a long-chain alkyl acrylate-based releasing agent can be used.

The die bonding films 10, 12 with the dicing sheet according to the present embodiment are produced, for example, as follows.

First, the base material 1 can be formed by a conventionally known film-forming method. Examples of the film-forming method include a calendar film-forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method and the like.

Next, a pressure-sensitive adhesive composition solution is applied onto the base material 1 to form a coating film, and then the coating film is dried under predetermined conditions (heating crosslinking if necessary) to form a pressure-sensitive adhesive layer 2. [ The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. The drying conditions are, for example, within a range of a drying temperature of 80 to 150 DEG C and a drying time of 0.5 to 5 minutes. Further, the pressure-sensitive adhesive composition may be coated on the separator to form a coating film, and then the coating film may be dried under the above drying conditions to form the pressure-sensitive adhesive layer (2). Thereafter, the pressure-sensitive adhesive layer 2 is bonded to the substrate 1 together with the separator. Thus, the dicing sheet 11 is produced.

The die bonding films 3 and 3 'are produced, for example, as follows.

First, an adhesive composition which is a material for forming the die bonding films 3 and 3 'is produced. As described above, the adhesive composition contains a thermoplastic resin, a thermosetting resin, thermally conductive particles and various other additives as required, as described above. Usually, the adhesive composition is used in a solution state in which the adhesive composition is dissolved in a solvent, or a dispersion state in which the adhesive composition is dispersed in a solvent (hereinafter also referred to as a dispersion state in a solution state).

Next, the adhesive composition solution is coated on the substrate separator to a predetermined thickness to form a coating film, and then the coating film is dried under predetermined conditions to form an adhesive layer. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. The drying conditions are, for example, a drying temperature of 70 to 160 DEG C and a drying time of 1 to 5 minutes. Alternatively, an adhesive layer may be formed by applying a solution of a pressure-sensitive adhesive composition on a separator to form a coating film, and then drying the coating film under the above-described drying conditions. Thereafter, the adhesive layer is bonded to the substrate separator together with the separator.

Subsequently, the separator is peeled off from the dicing sheet 11 and the adhesive layer, respectively, and the adhesive layer and the pressure-sensitive adhesive layer 2 are bonded to each other so as to be bonded. The bonding can be performed, for example, by pressing. At this time, the lamination temperature is not particularly limited, and is preferably 30 to 50 占 폚, for example, and more preferably 35 to 45 占 폚. The line pressure is not particularly limited, and is preferably, for example, 0.1 to 20 kgf / cm, more preferably 1 to 10 kgf / cm. Next, the substrate separator on the adhesive layer is peeled off to obtain the die bonding films 10, 12 with the dicing sheet according to the present embodiment.

(Manufacturing Method of Semiconductor Device)

A method for manufacturing a semiconductor device according to Embodiment 1-1 and a method for manufacturing a semiconductor device according to Embodiment 1-2 will be described as a method for manufacturing a semiconductor device according to Embodiment 1 of the present invention.

A manufacturing method of a semiconductor device according to Embodiment 1-1 is characterized by including the steps of preparing the thermosetting die-bonding film,

And a die bonding step of die bonding the semiconductor chip onto the adherend via the thermosetting die bonding film.

The manufacturing method of a semiconductor device according to Embodiment 1-2 is characterized in that it comprises the steps of preparing the die bonding film with a dicing sheet described above,

A bonding step of bonding the thermosetting die bonding film of the die bonding film with the dicing sheet to the back surface of the semiconductor wafer,

A dicing step of dicing the semiconductor wafer together with the thermosetting die bonding film to form a semiconductor chip on the chip,

A pickup step of picking up the semiconductor chip together with the thermosetting die bonding film from the die bonding film with the dicing sheet,

And a die bonding step of die bonding the semiconductor chip onto the adherend via the thermosetting die bonding film.

In the method of manufacturing a semiconductor device according to Embodiment 1-2, a die bonding film with a dicing sheet is used, whereas in the method of manufacturing a semiconductor device according to Embodiment 1-1, the die bonding film is formed as a single body In terms of using them, they are different and common in other respects. In the manufacturing method of the semiconductor device according to Embodiment 1-1, after the die bonding film is prepared and then the step of bonding the dicing film to the dicing sheet is performed, the manufacturing method of the semiconductor device according to Embodiment 1-2 is performed can do. Therefore, a method of manufacturing the semiconductor device according to Embodiments 1-2 will be described below.

First, the die bonding films 10, 12 with the dicing sheet are prepared (preparation step). The die bonding films 10, 12 with the dicing sheet are peeled off the separators arbitrarily provided on the die bonding films 3, 3 ', and used as follows. Hereinafter, a case in which the die bonding film 10 with a dicing sheet is used will be described with reference to Figs.

First, the semiconductor wafer 4 is pressed onto the semiconductor wafer attaching portion 3a of the die bonding film 3 in the die bonding film with dicing sheet 10, and the semiconductor wafer 4 is adhered and fixed thereto (bonding step) . This step is carried out while being pressed by a pressing means such as a pressing roll. The attachment temperature at the time of mounting is not particularly limited, and is preferably within a range of, for example, 40 to 90 캜.

Next, the semiconductor wafer 4 is diced (dicing step). As a result, the semiconductor wafer 4 is cut into a predetermined size and individualized to manufacture the semiconductor chip 5. The dicing method is not particularly limited, but is performed from the circuit surface side of the semiconductor wafer 4 according to a conventional method. Further, in this step, for example, a cutting method called a full cut in which cutting is performed up to the die bonding film 10 with a dicing sheet can be adopted. The dicing apparatus used in this step is not particularly limited and conventionally known dicing apparatuses can be used. Further, since the semiconductor wafer is adhered and fixed by the die bonding film 10 with the dicing sheet, chip breakage and chip scattering can be suppressed, and breakage of the semiconductor wafer 4 can be suppressed .

Next, in order to peel off the semiconductor chip adhered and fixed to the die bonding film with dicing sheet 10, the semiconductor chip 5 is picked up (pickup step). The pick-up method is not particularly limited, and various conventionally known methods can be employed. For example, a method in which individual semiconductor chips 5 are pushed up by a needle from the side of the die bonding film 10 with a dicing sheet, and the picked-up semiconductor chips 5 are picked up by a pickup device .

As a pickup condition, it is preferable that the needle push-up speed is 5 to 100 mm / sec, and more preferably 5 to 10 mm / sec, from the standpoint of chipping prevention.

Here, the pick-up is carried out after irradiating ultraviolet rays to the pressure-sensitive adhesive layer 2 when the pressure-sensitive adhesive layer 2 is of ultraviolet curing type. As a result, the adhesive force of the pressure-sensitive adhesive layer 2 to the die bonding film 3 is lowered, and the semiconductor chip 5 is easily peeled off. As a result, the semiconductor chip 5 can be picked up without damaging it. The conditions such as the irradiation intensity at the time of ultraviolet irradiation, the irradiation time, and the like are not particularly limited and may be suitably set according to necessity. As a light source used for ultraviolet irradiation, a known light source can be used. On the other hand, in the case where the pressure-sensitive adhesive layer is irradiated with ultraviolet rays to be cured, and the cured pressure-sensitive adhesive layer is bonded to the die-bonding film, ultraviolet irradiation is not required here.

Next, the pickuped semiconductor chip 5 is bonded and fixed to the adherend 6 via the die bonding film 3 (die bonding step). Examples of the adherend 6 include a lead frame, a TAB film, a substrate, or a separately manufactured semiconductor chip. The adherend 6 may be, for example, a deformable adherend such as easily deformed or a non-deformable adherend (semiconductor wafer or the like) which is difficult to deform.

As the substrate, conventionally known ones can be used. As the lead frame, an organic substrate made of a metal lead frame such as a Cu lead frame or a 42 Alloy lead frame, or a glass epoxy, BT (bismaleimide-triazine), polyimide or the like can be used. However, the substrate is not limited to this, and includes a circuit board that mounts the semiconductor chip and can be used by being electrically connected to the semiconductor chip.

Next, since the die bonding film 3 is of a thermosetting type, the semiconductor chip 5 is adhered and fixed to the adherend 6 by heat curing to improve the heat resistance (heat curing step). The heating temperature may be 80 to 200 占 폚, preferably 100 to 175 占 폚, more preferably 100 to 140 占 폚. The heating time may be 0.1 to 24 hours, preferably 0.1 to 3 hours, and more preferably 0.2 to 1 hour. The heat curing may be performed under a pressurizing condition. As the pressing conditions, 1~20kg / cm 2 range preferably of I and, 3~15kg / cm 2 in the range I is more preferable. The heating and curing under pressure can be performed, for example, in a chamber filled with an inert gas. On the other hand, the semiconductor chip 5 bonded to the substrate or the like via the die bonding film 3 can be provided in the reflow process.

The shear adhesive force of the die bonding film 3 after heat curing is preferably 0.2 MPa or more, and more preferably 0.2 to 10 MPa with respect to the adherend 6. When the die bonding film 3 has a shear adhesive strength of at least 0.2 MPa or more, the die bonding film 3 and the semiconductor chip 5 or the adherend 6 The shear deformation does not occur at the adhesive surface of the adhesive sheet. That is, the semiconductor chip 5 is not moved by the ultrasonic vibration at the time of wire bonding, thereby preventing the success rate of the wire bonding from being lowered.

3, the tip of the terminal portion (inner lead) of the adherend 6 and the electrode pad (not shown) on the semiconductor chip 5 are electrically connected to each other by a bonding wire 7 (Wire bonding process). As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire, or the like is used. The temperature at which wire bonding is carried out is carried out at 80 to 250 캜, preferably at 80 to 220 캜. Further, the heating time thereof is performed for several seconds to several minutes. The connection is carried out by the combination of the vibration energy by the ultrasonic wave and the pressing energy by the applied pressure in a state of being heated to be within the above temperature range. This step can be carried out without thermally curing the die bonding film 3.

Next, as shown in Fig. 3, if necessary, the semiconductor chip 5 is sealed with the sealing resin 8 (sealing step). This step is performed in order to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step can be performed by molding a resin for encapsulation into a metal mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is usually 60 to 90 seconds at 175 DEG C, but the heating conditions are not limited to this, and curing can be performed at 165 to 185 DEG C for several minutes. Thus, the semiconductor chip 5 and the adherend 6 are fixed via the die bonding film 3, together with the curing of the sealing resin 8. That is, even in the case where the post-curing step to be described later is not performed, the die bonding film 3 can be fixed in this step, thereby reducing the number of manufacturing steps and shortening the manufacturing period of the semiconductor device. In the sealing step, a method of embedding the semiconductor chip 5 in a sheet for sealing on a sheet (see, for example, JP-A-2013-7028) may be adopted.

Next, heating is carried out as occasion demands, so that the sealing resin 8 hardly cured in the sealing step is completely cured (post-curing step). The heat-curing of the die-bonding film 3 together with the encapsulating resin 8 becomes possible in this step even if the die-bonding film 3 is not completely thermally cured in the encapsulating process. The heating temperature in this step varies depending on the type of the encapsulating resin, but is in the range of 165 to 185 占 폚, for example, and the heating time is about 0.5 to 8 hours.

On the other hand, wire bonding is carried out after the temporary bonding by the die bonding step without passing through the heat curing step by the heat treatment of the die bonding film 3, and further the semiconductor chip 5 is sealed with the sealing resin 8 , The encapsulation resin 8 may be cured (post-cured). In this case, the shear adhesive force at the time of hardening of the die-bonding film 3 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the adherend 6. If the shear adhesive strength of the die bonding film 3 at the time of hardening is at least 0.2 MPa or more, even if the wire bonding process is performed without passing through the heating process, the die bonding film 3 ) And the bonding surface of the semiconductor chip 5 or the adherend 6 does not occur. That is, the semiconductor chip does not move by the ultrasonic vibration at the time of wire bonding, thereby preventing the success rate of the wire bonding from being lowered. On the other hand, the temporary bonding means that the die-bonding film 3 is cured (semi-cured state) so that the curing reaction of the thermosetting die bonding film 3 is not completely advanced ) Refers to a state in which the semiconductor chip 5 is fixed. On the other hand, when the wire bonding is performed without passing through the heat curing step by the heat treatment of the die bonding film 3, the step of curing after the step corresponds to the heat curing step in this specification.

<< Second Invention >>

Hereinafter, the second invention will be described.

Problems to be solved by the second invention

In order to make the die bonding film highly heat conductive, a method of highly charging the thermally conductive particles is considered. However, if the thermally conductive particles exhibit a single peak in the particle size distribution, a dense filling structure can not be formed, and high filling is difficult.

On the other hand, when the thermally conductive particles are highly filled in the die bonding film, the viscosity of the die bonding film is increased due to the interaction between the thermally conductive particles and the resin, and the fluidity is lowered. The bonding film may not be sufficiently followed. If the follow-up property of the die bonding film is poor, voids are formed between the die bonding film and the substrate. The voids lower the heat dissipation property of the semiconductor device. Further, the die-bonding film is easily peeled off from the adherend in the reflow process by the void.

The second object of the present invention is to provide a thermosetting type die bonding film and a thermosetting die bonding film which are capable of complicating the heat conductive particles and achieving good irregularity followability and resistance to humidity resistance, A die bonding film with a dicing sheet, and a method of manufacturing a semiconductor device.

A second aspect of the present invention is to provide a thermally conductive particle comprising a thermally conductive particle, wherein in the particle size distribution of the thermally conductive particle, a peak A exists in a particle diameter range of less than 2 탆, a peak B exists in a particle diameter range of 2 탆 or more, B to the particle diameter of the peak A is 5 to 20, and the thermal conductivity after heat curing is 1 W / m · K or more.

In the second aspect of the present invention, since the thermally conductive particles forming the peak A can be filled between the thermally conductive particles forming the peaks B (gaps), the thermally conductive particles can be charged high. In addition, since the ratio of the peak A to the particle diameter of the peak A of the peak B is within a specific range, good irregularity followability and moisture resistance can be obtained.

The thermal conductivity of the thermally conductive particles is preferably 12 W / m · K or more. Thus, excellent thermal conductivity can be obtained.

In the particle size distribution of the thermally conductive particles, it is preferable that the peak A is present in a particle diameter range of 0.3 μm or more and less than 2 μm.

In the particle size distribution of the thermally conductive particles, it is preferable that the peak B exists in the range of 2 탆 to 20 탆.

The average particle diameter of the thermally conductive particles is preferably 1 to 10 mu m. According to this, better irregularity followability can be obtained.

The thickness of the thermosetting die-bonding film is preferably 50 占 퐉 or less.

The sphericity of the thermally conductive particles is preferably 0.95 or more. According to this, the contact area between the thermally conductive particles and the resin is small, and the fluidity at a general die bonding temperature (120 ° C to 130 ° C) can be increased. Therefore, better irregularity followability can be obtained.

It is preferable that the thermally conductive particle is at least one selected from the group consisting of aluminum hydroxide particles, zinc oxide particles, aluminum nitride particles, silicon nitride particles, silicon carbide particles, magnesium oxide particles and boron nitride particles. They are high in thermal conductivity and easy to obtain those having high sphericity.

The second aspect of the present invention is also directed to a method of manufacturing a semiconductor device including the step of preparing the thermosetting die bonding film and the step of die bonding the semiconductor chip onto the adherend via the thermosetting die bonding film will be.

The second aspect of the present invention also relates to a die-bonding film with a dicing sheet in which the thermosetting die-bonding film is laminated on a dicing sheet having a pressure-sensitive adhesive layer laminated on a substrate.

A second aspect of the present invention is a method for manufacturing a semiconductor device, comprising the steps of: preparing the die bonding film with the dicing sheet; bonding the back surface of the semiconductor wafer to the thermosetting die bonding film of the die bonding film with the dicing sheet; Bonding the semiconductor die with the thermosetting die-bonding film to form a semiconductor chip on the chip; picking up the semiconductor chip together with the thermosetting die-bonding film from the die-bonding film with the dicing sheet; And a step of die-bonding the semiconductor chip onto an adherend via the thermosetting die-bonding film.

Hereinafter, the second aspect of the present invention will be described in detail based on the second embodiment, but the second invention is not limited thereto.

 [Embodiment 2]

(Die bonding film with dicing sheet)

The thermosetting die bonding film (hereinafter also referred to as &quot; die bonding film &quot;) according to Embodiment 2 and the die bonding film with a dicing sheet will be described below. The die-bonding film according to Embodiment 2 is a state in which the dicing sheet is not bonded to the die-bonding film with a dicing sheet described below. Therefore, in the following, a die bonding film with a dicing sheet will be described, and a die bonding film will be described.

As shown in Fig. 4, the die bonding film 210 with a dicing sheet has a structure in which a thermosetting die bonding film 203 is laminated on the dicing sheet 11. As shown in Fig. The dicing sheet 11 is constituted by laminating the pressure-sensitive adhesive layer 2 on the base material 1 and the die bonding film 203 is provided on the pressure-sensitive adhesive layer 2. [ The die bonding film 203 has a work attaching portion 203a for attaching a work and a peripheral portion 203b disposed around the work attaching portion 203a. As shown in Fig. 5, as a modified example, the die bonding film 212 with the dicing sheet having the die bonding film 203 'only at the work attachment portion may be used.

The die bonding films 203 and 203 'preferably have a thermal conductivity after heat curing of 1 W / m · K or more, preferably 1.2 W / m · K or more, and more preferably 1.5 W / m · K or more. Since the thermal conductivity after heat curing is 1 W / m · K or more, the semiconductor device manufactured using the die bonding films 203 and 203 'is excellent in heat dissipation. On the other hand, the larger the thermal conductivity of the die bonding films 203 and 203 'after heat curing is, the more preferable it is 20 W / m · K or less.

The "thermal conductivity after heat curing" refers to the thermal conductivity after heating at 130 ° C for 1 hour and then heating at 175 ° C for 5 hours.

The die bonding films 203 and 203 'include thermally conductive particles.

The thermal conductivity of the thermally conductive particles is preferably 12 W / m · K or more. The upper limit of the thermal conductivity of the thermally conductive particles is not particularly limited and is, for example, 400 W / m · K or less.

On the other hand, the thermal conductivity of the thermally conductive particles can be estimated from the crystal structure of the thermally conductive particles obtained by the X-ray structure analysis.

In the particle size distribution of the thermally conductive particles, there are two or more peaks. Concretely, the peak A exists in the particle diameter range of less than 2 탆, and the peak B exists in the particle diameter range of 2 탆 or more. In the die bonding films 203 and 203 ', the thermally conductive particles forming the peak A are filled between the thermally conductive particles forming the peak B. Therefore, it is possible to call the hot conductive particles.

In the particle size distribution of the thermally conductive particles, since the peak A is present in the particle diameter range of less than 2 mu m, the thermally conductive particles can be filled up. The peak A is preferably present in a particle diameter range of 1 占 퐉 or less.

The peak A is preferably present in a particle diameter range of 0.3 탆 or more, more preferably in a particle diameter range of 0.5 탆 or more. If it is 0.3 mu m or more, good irregularity followability can be obtained.

In the particle size distribution of the thermally conductive particles, since the peak B is present in the particle diameter range of 2 占 퐉 or more, the thermally conductive particles can be chirped, and good irregularity followability can be obtained. The peak B is preferably present in a particle diameter range of 4 탆 or more.

The peak B is preferably present in a particle diameter range of 20 탆 or less, more preferably in a particle diameter range of 12 탆 or less. If the thickness is 20 μm or less, the die bonding films 203 and 203 'can be thinned, and heat generated from the chip can be efficiently transferred to the adherend by the thinness.

In the particle size distribution of the thermally conductive particles, peaks other than the peak A and the peak B may be present.

On the other hand, the particle size distribution of the thermally conductive particles can be measured by the method described in Examples.

(Particle diameter of peak B / particle diameter of peak A) to the particle diameter of peak A of the particle diameter of peak B is 5 or more, and preferably 7 or more. 5 or more. Therefore, it is possible to call the thermally conductive particles at high speed, and good irregularity followability can be obtained. The ratio of the peak A to the particle diameter of the peak A of the peak B is 20 or less, preferably 18 or less, and more preferably 15 or less. 20 or less, whereby good moisture resistance can be obtained.

On the other hand, in order to present two or more peaks in the particle size distribution of the thermally conductive particles, two or more thermally conductive particles having different average particle diameters may be blended.

The average particle diameter of the thermally conductive particles is preferably 1 占 퐉 or more, and more preferably 1.5 占 퐉 or more. Since it is not less than 1 mu m, good irregularity followability can be obtained. The average particle diameter of the thermally conductive particles is preferably 10 占 퐉 or less, and more preferably 8 占 퐉 or less. Since the thickness is 10 μm or less, good film formability can be obtained.

On the other hand, the average particle diameter of the thermally conductive particles can be measured by the method described in Examples.

The specific surface area of the thermally conductive particles is preferably 0.5 m 2 / g or more, and more preferably 0.7 m 2 / g or more. When it is 0.5 m 2 / g or more, the modulus of elasticity after curing is high, and the flow resistance is excellent. The specific surface area of the thermally conductive particles is preferably 8 m 2 / g or less, more preferably 6.5 m 2 / g or less. When it is 8 m 2 / g or less, good irregularity followability is obtained.

On the other hand, the specific surface area of the thermally conductive particles can be measured by the method described in Examples.

The shape of the thermally conductive particles is not particularly limited and may be, for example, a flake, needle, filament, spherical or scaly shape. The shape of the thermally conductive particle is preferably 0.9 or more, more preferably 0.95 or more. As a result, the contact area between the thermally conductive particles and the resin can be reduced, and the fluidity at 120 to 130 占 폚 can be increased. On the other hand, Jingu-do indicates closer to Jingu-ji near 1.

On the other hand, the sphericity of the thermally conductive particles can be measured by the following method.

Measurement

The die bonding film is placed in a crucible and is heat-treated at 700 占 폚 for 2 hours under an atmospheric atmosphere. The obtained ash is photographed by SEM, and the sphericity is calculated from the area and the peripheral length of the observed particles by the following formula. On the other hand, for 100 particles, the sphericity is measured using an image processing apparatus (SISMEX Corporation: FPIA-3000).

(Jingudo) = {4 pi x (area) / (circumference length) 2 }

(Thermal conductivity: 36 W / m 占)), zinc oxide particles (thermal conductivity: 54 W / m 占)), aluminum nitride particles (thermal conductivity: (Thermal conductivity: 150W / m 占 K), silicon nitride particles (thermal conductivity: 27W / m 占)), silicon carbide particles (thermal conductivity: 200W / m 占)), magnesium oxide particles Particles (thermal conductivity: 60 W / m 占)) are preferable. Particularly, alumina particles are preferred because of their high thermal conductivity, dispersibility, and availability. In addition, since the boron nitride particles have a higher thermal conductivity, they can be suitably used.

The thermally conductive particles are preferably treated (pretreated) with a silane coupling agent. As a result, the dispersibility of the thermally conductive particles is improved, and the thermally conductive particles can be called up.

Suitable silane coupling agents are as described in Embodiment 1.

The method of treating the thermally conductive particles with a silane coupling agent is not particularly limited and includes a wet method in which thermally conductive particles and a silane coupling agent are mixed in a solvent, a dry method in which thermally conductive particles and a silane coupling agent are treated in a gas phase .

The throughput of the silane coupling agent is not particularly limited, but it is preferable to treat the silane coupling agent in an amount of 0.05 to 5 parts by weight based on 100 parts by weight of the thermally conductive particles.

The content of the thermally conductive particles is preferably at least 75% by weight, more preferably at least 80% by weight, and even more preferably at least 85% by weight, based on the entire die-bonding films 203 and 203 '. If the amount is 75% by weight or more, the semiconductor device manufactured using the die bonding films 203 and 203 'is excellent in heat radiation. Further, the content of the thermally conductive particles is preferably as large as possible but not more than 93% by weight, for example, from the viewpoint of film formability.

The die bonding films 203 and 203 'preferably include a resin component such as a thermosetting resin or a thermoplastic resin.

Examples of the thermosetting resin include a phenol resin, an amino resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. These resins may be used alone or in combination of two or more. Particularly, an epoxy resin containing a small amount of ionic impurities which corrodes semiconductor chips is preferable. As the curing agent of the epoxy resin, a phenol resin is preferable.

The epoxy resin is not particularly limited as long as it is generally used as an adhesive for die bonding, and examples thereof include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, , Bifunctional epoxy resins or polyfunctional epoxy resins such as naphthalene type, fluorene type, phenol novolac type, orthocresol novolac type, tris hydroxyphenyl methane type and tetraphenylol ethane type, An epoxy resin such as glycidyl isocyanurate type or glycidyl amine type is used. These may be used alone or in combination of two or more. Of these epoxy resins, novolak type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins and tetraphenylol ethane type epoxy resins are particularly preferable. These epoxy resins are rich in reactivity with a phenol resin as a curing agent and have excellent heat resistance.

An epoxy resin which is in a liquid state at room temperature is preferable in that the fluidity at 120 ° C to 130 ° C can be enhanced.

In the present specification, the term "liquid phase" means that the viscosity at 25 ° C. is less than 5000 Pa · s. On the other hand, the viscosity can be measured using a model No. HAAKE Roto VISCO1 manufactured by Thermo Scientific.

The softening point of the epoxy resin is preferably 100 DEG C or less in that the fluidity at 120 DEG C to 130 DEG C can be increased.

On the other hand, the softening point of the epoxy resin can be measured by the ring method specified in JIS K 7234-1986.

The phenol resin acts as a curing agent for the epoxy resin. Examples thereof include phenol novolak resins, phenol aralkyl resins, cresol novolak resins, tert-butyl phenol novolac resins, and novolac phenol novolak resins. Resins, resole-type phenol resins, and polyoxystyrenes such as polyparaxyxystyrene. These may be used alone or in combination of two or more. Of these phenolic resins, phenol novolac resins and phenol aralkyl resins are particularly preferable. This is because connection reliability of the semiconductor device can be improved.

The softening point of the phenol resin is preferably 100 占 폚 or lower, more preferably 80 占 폚 or lower because the fluidity at 120 占 폚 to 130 占 폚 can be increased.

On the other hand, the softening point of the phenol resin can be measured by the ring method specified in JIS K 6910-2007.

The mixing ratio of the epoxy resin to the phenol resin is preferably such that the hydroxyl group in the phenol resin is equivalent to 0.5 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component. More suitable is 0.8 to 1.2 equivalents. That is, if the mixing ratio of the two is out of the above range, sufficient curing reaction does not proceed and the properties of the epoxy resin cured product tend to deteriorate.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide Resin, a polyamide resin such as 6-nylon or 6,6-nylon, a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET or PBT, a polyamideimide resin, or a fluororesin. These thermoplastic resins may be used alone or in combination of two or more. Among these thermoplastic resins, an acrylic resin which is low in ionic impurities and high in heat resistance and can secure the reliability of a semiconductor chip is particularly preferable.

A suitable acrylic resin is as described in the first embodiment.

The content of the resin component is preferably at least 7% by weight based on the entirety of the die bonding films 203 and 203 '. The content of the resin component is preferably 25% by weight or less, more preferably 20% by weight or less, and even more preferably 15% by weight or less, based on the entirety of the die bonding films 203 and 203 '.

The compounding ratio of the thermosetting resin in the resin component (the total amount of the thermosetting resin and the thermoplastic resin) is not particularly limited as long as the die bonding films 203 and 203 'exhibit a function as a thermosetting type when heated under a predetermined condition, Is preferably within a range of 75 to 99% by weight, and more preferably within a range of 85 to 98% by weight from the viewpoint of improving the flowability at a temperature of from room temperature to 130 [deg.] C.

The blending ratio of the thermoplastic resin in the resin component is preferably within a range of 1 to 25% by weight, and more preferably within a range of 2 to 15% by weight in view of increasing fluidity at 120 to 130 캜.

The die bonding films 203 and 203 'preferably include a curing catalyst. Thus, thermal curing of the curing agent such as epoxy resin and phenol resin can be promoted. The curing catalyst is not particularly limited and examples thereof include tetraphenylphosphonium tetraphenylborate (trade name: TPP-K), tetraphenylphosphonium tetra-p-triborate (trade name: TPP-MK), triphenylphosphine triphenylborane Boron-based curing catalysts such as TPP-S (product name: TPP-S) (all manufactured by Hokko Chemical Industry Co., Ltd.). Among them, tetraphenylphosphonium tetra-p-triborate is preferable because of its excellent latency and good storage stability at room temperature.

The content of the curing catalyst can be appropriately set, but is preferably 0.1 to 3 parts by weight, more preferably 0.5 to 2 parts by weight based on 100 parts by weight of the thermosetting resin.

When the die bonding films 203 and 203 'are previously crosslinked to some extent, it is preferable to add a polyfunctional compound which reacts with a functional group at the molecular chain terminal of the polymer as a crosslinking agent. This makes it possible to improve the adhesive property under high temperature and to improve the heat resistance.

Suitable crosslinking agents are as described in Embodiment 1.

In addition, the die bonding films 203 and 203 'may suitably contain fillers other than the thermally conductive particles depending on the use thereof. The compounding of the filler enables adjustment of the elastic modulus and the like. Specific examples of the filler are as described in the first embodiment.

On the other hand, in addition to the filler, other additives may be appropriately added to the die-bonding films 203 and 203 ', if necessary. Specific examples of other additives are the same as those described in the first embodiment.

The lamination structure of the die bonding films 203 and 203 'is not particularly limited and may be a single layer of an adhesive layer or a multilayer structure in which an adhesive layer is formed on one side or both sides of a core material. As the core material, a film (e.g., a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film or the like), a resin substrate reinforced with glass fiber or nonwoven fabric made of plastic, .

The thickness of the die bonding films 203 and 203 '(total thickness in the case of a laminate) is not particularly limited, but is preferably 1 μm or more, more preferably 5 μm or more, and further preferably 10 μm or more . The thickness of the die bonding films 203 and 203 'is preferably 200 占 퐉 or less, more preferably 150 占 퐉 or less, further preferably 100 占 퐉 or less, particularly preferably 50 占 퐉 or less.

The die bonding films 210 and 212 with the dicing sheet are formed on the substrate 1, the pressure sensitive adhesive layer 2 and the die bonding films 203 and 203 ' Or to prevent the circuit from being destroyed by a charge of a semiconductor wafer or the like caused by the semiconductor wafer or the like. The provision of the antistatic function can be achieved by a method of adding an antistatic agent or a conductive material to the substrate 1, the pressure-sensitive adhesive layer 2, the die bonding films 203 and 203 ' Or the like can be carried out in a suitable manner. These methods are preferable in a method in which impurity ions which may deteriorate the semiconductor wafer are hardly generated. Examples of the conductive material (conductive filler) blended for the purpose of imparting conductivity and improving the conductivity include spherical, needle-shaped, flaky metal powder such as silver, aluminum, gold, copper, nickel, and conductive alloy, amorphous carbon black, graphite And the like.

It is preferable that the die bonding films 203 and 203 'of the dicing sheet-attached die bonding films 210 and 212 are protected by a separator (not shown). The separator has a function as a protecting material for protecting the die bonding films 203 and 203 'until it is provided for practical use. Further, the separator can be used as a supporting substrate for transferring the die bonding films 203 and 203 'to the pressure-sensitive adhesive layer 2 further. The separator is peeled off when the work is adhered onto the die bonding films 203 and 203 'of the die bonding films 210 and 212 with the dicing sheet. As the separator, a plastic film or paper surface-coated with a releasing agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine-based releasing agent, or a long-chain alkyl acrylate-based releasing agent can be used.

The dicing sheet-attached die bonding films 210 and 212 can be manufactured by the method described in the first embodiment or the like.

In the second embodiment, a semiconductor device can be manufactured by the same method as in the first embodiment.

<< Third Invention >>

Hereinafter, the third invention will be described.

Problems to be solved by the third invention

Among semiconductor devices, a high-frequency device (RF device) is particularly important for heat dissipation due to a large amount of heat generated.

On the other hand, a semiconductor device such as a high-frequency device is sometimes required to have reliability that meets Moisture Sensitivity Levels (MSL) 1 of the moisture absorption reflow test. However, the conventional die bonding film does not have high adhesiveness to the lead frame, peeling may occur between the die bonding film and the lead frame, and there is room for improvement in reliability.

The third object of the present invention is to provide a thermosetting die bonding film, a die bonding film with a dicing sheet using a thermosetting die bonding film, and a semiconductor device And a method for producing the same.

The inventors of the present invention have studied a thermosetting die-bonding film in order to solve the aforementioned conventional problems. As a result, it has been found that a semiconductor device having high heat dissipation performance and excellent reliability can be obtained by employing the following constitution, thereby completing the third invention.

The third aspect of the present invention is a thermoplastic resin composition comprising thermally conductive particles, wherein the content of the thermally conductive particles is 75 wt% or more with respect to the entire thermosetting die-bonding film, and the coefficient of linear expansion at a glass transition point or lower of the cured product obtained by curing is 5 ppm / K to 50 ppm / K, and a linear expansion coefficient at a temperature exceeding the glass transition point of the cured product is 150 ppm / K or less.

In the third aspect of the present invention, by relatively increasing the amount of the thermally conductive particles, the linear expansion coefficient of the cured product at or below the glass transition point is adjusted to 5 ppm / K to 50 ppm / K, The expansion coefficient is adjusted to 150 ppm / K or less. In the thermosetting die-bonding film of the third aspect of the present invention, the coefficient of linear expansion at a temperature below the glass transition point and the temperature at a temperature exceeding the glass transition point satisfy a linear expansion coefficient of copper of 16.8 ppm / K It is possible to suppress the occurrence of stress caused by the difference in linear expansion in the reflow step in which heating is performed at a high temperature (for example, 260 DEG C), and a semiconductor device having excellent reliability can be obtained.

In the thermosetting die-bonding film of the third aspect of the present invention, the thermal conductivity of the thermally conductive particles is preferably 12 W / m · K or more.

In the thermosetting die-bonding film of the third aspect of the present invention, the cured product preferably has a storage elastic modulus (E ') at 260 ° C of 1 GPa or less.

The third aspect of the present invention is also directed to a method of manufacturing a semiconductor device including the step of preparing the thermosetting die bonding film and the step of die bonding the semiconductor chip onto the adherend via the thermosetting die bonding film will be.

The third aspect of the present invention also relates to a die-bonding film with a dicing sheet wherein the thermosetting die-bonding film is laminated on a dicing sheet having a pressure-sensitive adhesive layer laminated on a substrate.

A third aspect of the present invention is a method for manufacturing a semiconductor device, comprising the steps of: preparing the die bonding film with the dicing sheet; bonding the back surface of the semiconductor wafer to the thermosetting die bonding film of the die bonding film with the dicing sheet; Bonding the semiconductor die with the thermosetting die-bonding film to form a semiconductor chip on the chip; picking up the semiconductor chip together with the thermosetting die-bonding film from the die-bonding film with the dicing sheet; And a step of die-bonding the semiconductor chip onto an adherend via the thermosetting die-bonding film.

Hereinafter, the third aspect of the present invention will be described in detail with reference to the third embodiment, but the third invention is not limited thereto.

[Embodiment 3]

(Die bonding film with dicing sheet)

The thermosetting die bonding film (hereinafter also referred to as &quot; die bonding film &quot;) according to Embodiment 3 and the die bonding film with a dicing sheet will be described below. The die-bonding film according to Embodiment 3 is a state in which the dicing sheet is not bonded to the die-bonding film with a dicing sheet described below. Therefore, in the following, a die bonding film with a dicing sheet will be described, and a die bonding film will be described.

As shown in Fig. 6, the die bonding film 310 with a dicing sheet has a structure in which a thermosetting die bonding film 303 is laminated on the dicing sheet 11. As shown in Fig. The dicing sheet 11 is constituted by laminating a pressure-sensitive adhesive layer 2 on a base material 1 and the die bonding film 303 is provided on the pressure-sensitive adhesive layer 2. [ The die bonding film 303 has a work attaching portion 303a for attaching a work and a peripheral portion 303b disposed around the work attaching portion 303a. As shown in Fig. 7, as a modified example, the dicing sheet-attached die bonding film 312 having the die bonding film 303 'only on the work attaching portion may be used.

The linear expansion coefficient of the cured product obtained by curing the die bonding films 303 and 303 'is not lower than 5 ppm / K at the glass transition point or lower. It is possible to suppress the occurrence of stress caused by the linear expansion of the die bonding films 303 and 303 'and the linear expansion of the adherend such as the lead frame in the reflow process, An excellent semiconductor device can be obtained. The linear expansion coefficient of the cured product at the glass transition point or lower is preferably 10 ppm / K or more. On the other hand, the linear expansion coefficient of the cured product at a glass transition point or lower is 50 ppm / K or less. It is possible to suppress the occurrence of stress caused by the linear expansion of the die bonding films 303 and 303 'and the linear expansion of the adherend such as the lead frame in the reflow process, An excellent semiconductor device can be obtained. The linear expansion coefficient of the cured product at the glass transition point or lower is preferably 40 ppm / K or less.

The linear expansion coefficient at a temperature exceeding the glass transition point of the cured product obtained by curing the die bonding films 303 and 303 'is 150 ppm / K or less. It is possible to suppress the occurrence of stress caused by the linear expansion of the die bonding films 303 and 303 'and the linear expansion of the adherend such as the lead frame in the reflow process, An excellent semiconductor device can be obtained. The linear expansion coefficient at a temperature exceeding the glass transition point of the cured product is preferably 140 ppm / K or less, more preferably 120 ppm / K or less.

On the other hand, the lower limit of the linear expansion coefficient at a temperature exceeding the glass transition point of the cured product is not particularly limited and is, for example, 5 ppm / K or more. If it is 5 ppm / K or more, it is possible to suppress the occurrence of stress caused by the linear expansion of the die bonding films 303 and 303 'and the linear expansion of an adherend such as a lead frame in the reflow process, A semiconductor device is obtained.

"Cured product" means a cured product obtained by heating at 130 ° C for 1 hour and then heating at 175 ° C for 5 hours. On the other hand, the coefficient of linear expansion can be measured by the method described in the embodiment.

The linear expansion coefficient of the cured product can be controlled by the content of the thermally conductive particles and the like. For example, the linear expansion coefficient can be reduced by increasing the content of the thermally conductive particles.

The glass transition point of the cured product obtained by curing the die bonding films 303 and 303 'is preferably 80 ° C or more. If the temperature is 80 占 폚 or higher, it is possible to suppress the rapid change in physical properties in the normal use temperature range of the semiconductor device and the temperature range of the heat cycle reliability test. On the other hand, the glass transition point of the cured product is not particularly limited, but is, for example, 200 DEG C or lower, preferably 120 DEG C or lower.

On the other hand, the glass transition point of the cured product can be measured by the method described in the Examples.

The glass transition point of the cured product can be controlled by the cross-linking density due to the functional group of the thermosetting resin (for example, epoxy resin, phenol resin). For example, by using a thermosetting resin having a large number of functional groups in the molecule, the glass transition point can be increased.

The cured product obtained by curing the die bonding films 303 and 303 'has a storage elastic modulus (E') at 260 DEG C of preferably 1 GPa or less. If it is 1 GPa or less, the stress relaxation property is excellent, the internal stress occurring in the semiconductor device at the time of thermal change can be relaxed, and peeling from the adherend can be made less likely to occur. The storage elastic modulus of the cured product at 260 캜 is preferably 1 MPa or more. If it is 1 MPa or more, it is difficult to cause cohesive failure at a high temperature and flowability is excellent.

On the other hand, the storage modulus of the cured product can be measured by the method described in the examples.

The melt viscosity of the die bonding films 303 and 303 'at 130 캜 is preferably 300 Pa · s or less, more preferably 280 Pa · s or less, and further preferably 250 Pa · s or less. When the viscosity is 300 Pa · s or less, the fluidity at a general die bonding temperature (120 ° C. to 130 ° C.) is high, and it is possible to follow the unevenness of an adherend such as a printed wiring board and the occurrence of voids can be suppressed. The melt viscosity at 130 캜 is preferably 10 Pa · s or more, more preferably 20 Pa · s or more, and further preferably 50 Pa · s or more. If it is 10 Pa · s or more, the shape of the film can be maintained.

On the other hand, the melt viscosity at 130 캜 refers to a value obtained by setting the shear rate to 5 (1 / sec) as a measurement condition.

The melt viscosity of the die bonding films 303 and 303 'at 130 캜 can be controlled by the average particle diameter of the thermally conductive particles, the softening point of the epoxy resin, and the softening point of the phenolic resin. For example, by setting the average particle diameter of the thermally conductive particles to a large value, by decreasing the softening point of the epoxy resin, and by decreasing the softening point of the phenol resin, the melt viscosity at 130 ° C can be reduced.

The thermal conductivity after heat curing of the die bonding films 303 and 303 'is preferably 1 W / m · K or more, more preferably 1.2 W / m · K or more, and more preferably 1.5 W / m · K or more. When the thermal conductivity after heat curing is 1 W / m · K or more, the semiconductor device manufactured using the die bonding films 303 and 303 'is excellent in heat dissipation. On the other hand, the larger the thermal conductivity of the die bonding films 303 and 303 'after heat curing is, the more preferable is 20 W / m · K or less.

The "thermal conductivity after heat curing" refers to the thermal conductivity after heating at 130 ° C for 1 hour and then heating at 175 ° C for 5 hours.

The die bonding films 303 and 303 'include thermally conductive particles.

The thermal conductivity of the thermally conductive particles is preferably 12 W / m · K or more, and more preferably 20 W / m · K or more. The upper limit of the thermal conductivity of the thermally conductive particles is not particularly limited, and is, for example, 400 W / m · K or less, preferably 50 W / m · K or less.

On the other hand, the thermal conductivity of the thermally conductive particles can be estimated from the crystal structure of the thermally conductive particles obtained by the X-ray structure analysis.

The average particle diameter of the thermally conductive particles is 3 占 퐉 or more, and preferably 3.5 占 퐉 or more. It is possible to increase the fluidity at 120 to 130 占 폚. The average particle diameter of the thermally conductive particles is 7 mu m or less, preferably 6 mu m or less. 7 mu m or less, good film formability can be obtained.

On the other hand, the average particle diameter of the thermally conductive particles can be measured by the method described in Examples.

It is preferable that two or more peaks are present in the particle size distribution of the thermally conductive particles. Specifically, it is preferable that a first peak exists in a particle diameter range of 0.2 to 0.8 占 퐉, and a second peak exists in a particle diameter range of 3 to 15 占 퐉. Thus, the thermally conductive particles forming the first peak can be filled between the thermally conductive particles forming the second peak (gap), so that the thermally conductive particles can be filled up.

If the particle diameter of the first peak is less than 0.2 mu m, the viscosity of the die bonding films 303 and 303 'becomes high, and it tends to follow the unevenness of the adherend. If the particle size of the first peak exceeds 0.8 mu m, it is liable that it becomes difficult to call the hot conductive particles.

If the particle diameter of the second peak is less than 3 占 퐉, it tends to be difficult to call the hot conductive particles. Further, the viscosity of the die bonding films 303 and 303 'becomes excessively high, so that it tends not to follow the unevenness of the adherend. If the particle diameter of the second peak exceeds 15 mu m, it is difficult to make the die bonding films 303 and 303 'thin.

On the other hand, in order to present two or more peaks in the particle size distribution of the thermally conductive particles, two or more thermally conductive particles having different average particle diameters may be blended.

The shape of the thermally conductive particles is not particularly limited and may be, for example, a flake, needle, filament, spherical or scaly shape. The shape of the thermally conductive particle is preferably 0.9 or more, more preferably 0.95 or more. As a result, the contact area between the thermally conductive particles and the resin can be reduced, and the fluidity at 120 ° C to 130 ° C can be increased. On the other hand, Jingu-do indicates closer to Jingu-ji near 1.

On the other hand, the sphericity of the thermally conductive particles can be measured by the following method.

Measurement

The die bonding film is placed in a crucible and is heat-treated at 700 占 폚 for 2 hours under an atmospheric atmosphere. The obtained ash is photographed by SEM, and the sphericity is calculated from the area and the peripheral length of the observed particles by the following formula. On the other hand, for 100 particles, the sphericity is measured using an image processing apparatus (SISMEX Corporation: FPIA-3000).

(Jingudo) = {4 pi x (area) / (circumference length) 2 }

(Thermal conductivity: 36 W / m 占)), zinc oxide particles (thermal conductivity: 54 W / m 占)), aluminum nitride particles (thermal conductivity: (Thermal conductivity: 150W / m 占 K), silicon nitride particles (thermal conductivity: 27W / m 占)), silicon carbide particles (thermal conductivity: 200W / m 占)), magnesium oxide particles Particles (thermal conductivity: 60 W / m 占)) are preferable. Particularly, alumina particles are preferred because of their high thermal conductivity, dispersibility, and availability. In addition, since the boron nitride particles have a higher thermal conductivity, they can be suitably used.

The thermally conductive particles are preferably treated (pretreated) with a silane coupling agent. As a result, the dispersibility of the thermally conductive particles is improved, and the thermally conductive particles can be called up.

Suitable silane coupling agents are as described in Embodiment 1.

The method of treating the thermally conductive particles with a silane coupling agent is not particularly limited and includes a wet method in which thermally conductive particles and a silane coupling agent are mixed in a solvent, a dry method in which thermally conductive particles and a silane coupling agent are treated in a gas phase .

The throughput of the silane coupling agent is not particularly limited, but it is preferable to treat the silane coupling agent in an amount of 0.05 to 5 parts by weight based on 100 parts by weight of the thermally conductive particles.

The content of the thermally conductive particles is at least 75% by weight, preferably at least 80% by weight, more preferably at least 85% by weight based on the entire die-bonding films 303 and 303 '. Since it is not less than 75% by weight, the semiconductor device manufactured using the die bonding films 303 and 303 'is excellent in heat radiation. The linear expansion coefficient of the cured product at a glass transition point or lower can be easily adjusted to 5 ppm / K to 30 ppm / K, and the linear expansion coefficient at a temperature exceeding the glass transition point of the cured product can be easily made 100 ppm / K or less Can be adjusted. Further, the content of the thermally conductive particles is preferably as large as possible but not more than 93% by weight, for example, from the viewpoint of film formability.

The die bonding films 303 and 303 'preferably include a resin component such as a thermosetting resin or a thermoplastic resin.

Examples of the thermosetting resin include a phenol resin, an amino resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. These resins may be used alone or in combination of two or more. Particularly, an epoxy resin containing a small amount of ionic impurities which corrodes semiconductor chips is preferable. As the curing agent of the epoxy resin, a phenol resin is preferable.

The epoxy resin is not particularly limited as long as it is generally used as an adhesive for die bonding, and examples thereof include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, , Bifunctional epoxy resins or polyfunctional epoxy resins such as naphthalene type, fluorene type, phenol novolac type, orthocresol novolac type, tris hydroxyphenyl methane type and tetraphenylol ethane type, An epoxy resin such as glycidyl isocyanurate type or glycidyl amine type is used. These may be used alone or in combination of two or more. Of these epoxy resins, novolak type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins and tetraphenylol ethane type epoxy resins are particularly preferable. These epoxy resins are rich in reactivity with a phenol resin as a curing agent and have excellent heat resistance.

Further, a bisphenol A epoxy resin is preferable in that it is flexible at room temperature and gives flexibility to the die bonding films 303 and 303 '. A bisphenol F type epoxy resin is preferable because it has high heat resistance and excellent chemical resistance and is flexible at room temperature and gives flexibility to the die bonding films 303 and 303 '.

An epoxy resin which is in a liquid state at room temperature is preferable in that the fluidity at 120 ° C to 130 ° C can be enhanced.

In the present specification, the term "liquid phase" means that the viscosity at 25 ° C. is less than 5000 Pa · s. On the other hand, the viscosity can be measured using a model No. HAAKE Roto VISCO1 manufactured by Thermo Scientific.

The softening point of the epoxy resin is preferably 100 占 폚 or lower, more preferably 80 占 폚 or lower, and even more preferably 70 占 폚 or lower, since the fluidity at 120 占 폚 to 130 占 폚 can be increased.

On the other hand, the softening point of the epoxy resin can be measured by the ring method specified in JIS K 7234-1986.

When the die bonding films 303 and 303 'contain an epoxy resin which is in a liquid state at room temperature, it is preferable to further contain an epoxy resin having a softening point of 40 ° C to 100 ° C. As a result, the tackiness at room temperature is suppressed, and die bonding films 303 and 303 'having good workability are obtained.

When the die bonding films 303 and 303 'contain an epoxy resin which is liquid at room temperature and an epoxy resin whose softening point is 40 ° C to 100 ° C, the content of the epoxy resin which is liquid at room temperature is preferably 100% Is at least 10% by weight, more preferably at least 20% by weight. The content of the epoxy resin which is liquid at room temperature is preferably 80% by weight or less, more preferably 70% by weight or less, based on 100% by weight of the epoxy resin.

Further, the phenol resin acts as a curing agent for the epoxy resin. Examples thereof include phenol novolac resins, phenol aralkyl resins, cresol novolak resins, tert-butyl phenol novolac resins, and novolac phenol novolac resins Resins, resole-type phenol resins, and polyoxystyrenes such as polyparaxyxystyrene. These may be used alone or in combination of two or more. Of these phenolic resins, phenol novolac resins and phenol aralkyl resins are particularly preferable. This is because connection reliability of the semiconductor device can be improved.

The softening point of the phenol resin is preferably 100 占 폚 or lower, more preferably 80 占 폚 or lower because the fluidity at 120 占 폚 to 130 占 폚 can be increased.

On the other hand, the softening point of the phenol resin can be measured by the ring method specified in JIS K 6910-2007.

The mixing ratio of the epoxy resin to the phenol resin is preferably such that the hydroxyl group in the phenol resin is equivalent to 0.5 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component. More suitable is 0.8 to 1.2 equivalents. That is, if the mixing ratio of the two is out of the above range, sufficient curing reaction does not proceed and the properties of the epoxy resin cured product tend to deteriorate.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide Resin, a polyamide resin such as 6-nylon or 6,6-nylon, a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET or PBT, a polyamideimide resin, or a fluororesin. These thermoplastic resins may be used alone or in combination of two or more. Among these thermoplastic resins, an acrylic resin which is low in ionic impurities and high in heat resistance and can secure the reliability of a semiconductor chip is particularly preferable.

A suitable acrylic resin is as described in the first embodiment.

The content of the resin component is preferably at least 7% by weight based on the entirety of the die bonding films 303 and 303 '. The content of the resin component is preferably 25% by weight or less, more preferably 20% by weight or less, and even more preferably 15% by weight or less, based on the entirety of the die-bonding films 303 and 303 '.

The compounding ratio of the thermosetting resin in the resin component (the total amount of the thermosetting resin and the thermoplastic resin) is not particularly limited as long as the die bonding film 303 or 303 'exhibits a function as a thermosetting type when heated under a predetermined condition, Is preferably within a range of 75 to 99% by weight, and more preferably within a range of 85 to 98% by weight from the viewpoint of improving the flowability at a temperature of from room temperature to 130 [deg.] C.

The blending ratio of the thermoplastic resin in the resin component is preferably within a range of 1 to 25% by weight, and more preferably within a range of 2 to 15% by weight in view of increasing fluidity at 120 to 130 캜.

The die bonding films 303 and 303 'preferably include a hardening promoting catalyst. Thus, thermal curing of the curing agent such as epoxy resin and phenol resin can be promoted. Examples of the curing accelerating catalyst include, but not limited to, tetraphenylphosphonium tetraphenylborate (trade name: TPP-K), tetraphenylphosphonium tetra-p-triborate (trade name: TPP-MK ), And triphenylphosphine triphenylborane (trade name: TPP-S) (all manufactured by Hokko Chemical Industry Co., Ltd.). Examples of the imidazole-based curing accelerators (imidazole-based curing accelerating catalysts) include 2-methylimidazole (trade name: 2MZ), 2-undecylimidazole (trade name: C11-Z), 2-heptadecylimidazole Methylimidazole (trade name: 2E4MZ), 2-phenylimidazole (trade name: 2PZ), 2-ethylimidazole Benzyl-2-phenylimidazole (trade name: 1B2PZ), 1-benzyl-2-methylimidazole (trade name: 1B2MZ) 2-methylimidazole (trade name: 2MZ-CN), 1-cyanoethyl-2-undecylimidazole (trade name: C11Z-CN), 1-cyanoethyl- 2MZ-A), 2 (2'-methylimidazolyl- (1 ')] - ethyl-s-triazine (trade name: 2MZ- C11Z-A), 2,4-diamino-6- [2 ' -dimethyl- -Ethyl-4'-methylimidazolyl- (1 ')] - ethyl-s-triazine (2'-methylimidazolyl- (1 ')] -ethyl-s-triazine isocyanuric acid adduct (trade name: 2MA-OK 2-phenyl-4-methyl-5-hydroxymethylimidazole (trade name: 2P4MHZ-PW) (All manufactured by Shikoku Hosei Kogyo Co., Ltd.). Among them, 2-phenyl-4,5-dihydroxymethylimidazole is preferable because of high reactivity and curing reaction proceeds in a short time.

The content of the curing catalyst can be appropriately set, but is preferably 0.1 to 3 parts by weight, more preferably 0.5 to 2 parts by weight based on 100 parts by weight of the thermosetting resin.

When the die bonding films 303 and 303 'are previously crosslinked to some extent, a polyfunctional compound which reacts with functional groups at the molecular chain terminals of the polymer is preferably added as a crosslinking agent. This makes it possible to improve the adhesive property under high temperature and to improve the heat resistance.

Suitable crosslinking agents are as described in Embodiment 1.

In addition, fillers other than the thermally conductive particles can be appropriately mixed in the die bonding films 303 and 303 ', depending on the use thereof. The compounding of the filler enables adjustment of the elastic modulus and the like. Specific examples of the filler are as described in the first embodiment.

On the other hand, other additives may be appropriately added to the die bonding films 303 and 303 ', if necessary, in addition to the filler. Specific examples of other additives are the same as those described in the first embodiment.

The laminated structure of the die bonding films 303 and 303 'is not particularly limited, and for example, a multilayer structure in which an adhesive layer is formed on one side or both sides of a core material may be used. As the core material, a film (e.g., a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film or the like), a resin substrate reinforced with glass fiber or nonwoven fabric made of plastic, .

The thickness of the die bonding films 303 and 303 '(total thickness in the case of a laminate) is not particularly limited, but is preferably 1 탆 or more, more preferably 5 탆 or more, and further preferably 10 탆 or more . The thickness of the die bonding films 303 and 303 'is preferably 200 占 퐉 or less, more preferably 150 占 퐉 or less, further preferably 100 占 퐉 or less, particularly preferably 50 占 퐉 or less.

The die bonding films 310 and 312 with the dicing sheet are formed on the substrate 1, the pressure sensitive adhesive layer 2 and the die bonding films 303 and 303 ' Or to prevent the circuit from being destroyed by a charge of a semiconductor wafer or the like caused by the semiconductor wafer or the like. The provision of the antistatic function can be achieved by a method of adding an antistatic agent or a conductive material to the substrate 1, the pressure-sensitive adhesive layer 2, the die bonding films 303 and 303 ' Or the like can be carried out in a suitable manner. These methods are preferable in a method in which impurity ions which may deteriorate the semiconductor wafer are hardly generated. Examples of the conductive material (conductive filler) blended for the purpose of imparting conductivity and improving the conductivity include spherical, needle-shaped, flaky metal powder such as silver, aluminum, gold, copper, nickel, and conductive alloy, amorphous carbon black, graphite And the like.

It is preferable that the die bonding films 303 and 303 'of the dicing sheet-attached die bonding films 310 and 312 are protected by a separator (not shown). The separator has a function as a protecting material for protecting the die bonding films 303 and 303 'until it is provided for practical use. Further, the separator can be used as a supporting substrate for transferring the die bonding films 303 and 303 'to the pressure-sensitive adhesive layer 2 further. The separator is peeled off when the work is adhered on the die bonding films 303 and 303 'of the die bonding films 310 and 312 with the dicing sheet. As the separator, a plastic film or paper surface-coated with a releasing agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine-based releasing agent, or a long-chain alkyl acrylate-based releasing agent can be used.

The dicing sheet-attached die bonding films 310 and 312 can be manufactured by the method and the like described in the first embodiment.

In the third embodiment, a semiconductor device can be manufactured by the same method as in the first embodiment.

<< Fourth invention >>

Hereinafter, the fourth aspect of the present invention will be described.

Problems to be Solved by the Fourth Invention

In order to make the die bonding film to have a high thermal conductivity, it is necessary to mix the thermally conductive thermally conductive particles with high filling. However, in the state where the die-bonding film is filled with the thermally conductive particles, the unevenness of the surface of the die-bonding film becomes large. For this reason, there is a problem that the peeling force at the time of peeling from the laminated state on the dicing sheet becomes locally large or small, and is not stable.

The present invention has been accomplished in view of the above problems, and an object of the present invention is to provide a thermosetting resin composition which is capable of reducing the unevenness of the surface while blending the thermally conductive particles at a high filling ratio and reducing the peeling force when peeling off from the laminated state on the dicing sheet A die-bonding film with a dicing sheet having the thermosetting die-bonding film, and a heat-curable die-bonding film capable of stabilizing the heat-curable die-bonding film.

It is another object of the present invention to provide a process for producing the thermosetting die-bonding film and a process for producing a semiconductor device using the die-bonding film with the dicing sheet.

The inventors of the present invention have studied a thermosetting die-bonding film in order to solve the aforementioned conventional problems. As a result, it has been found that by adopting the following constitution, it becomes possible to stabilize the peeling force when peeling off from the state of being laminated on the dicing sheet, and the present invention has been completed.

That is, in the thermosetting die-bonding film according to the fourth invention,

The thermoconductive particles having a thermal conductivity of 12 W / m · K or more are contained in an amount of 75% by weight or more based on the entire thermosetting die-bonding film,

And has a surface roughness Ra of 200 nm or less on one side.

According to the above constitution, since the thermoconductive particles having a thermal conductivity of 12 W / m · K or more are contained in an amount of 75% by weight or more based on the entire thermosetting die-bonding film, they have high thermal conductivity.

Further, since the surface roughness Ra of one surface is 200 nm or less, when the surface is bonded to the dicing sheet with the surface as a bonding surface, the peeling force at the time of peeling from the dicing sheet can be stabilized. As a result, the peeling force locally becomes small, and peeling and the like can be prevented from occurring, and water can be prevented from entering between the dicing sheet and the thermosetting die-bonding film at the time of dicing, for example.

In the above constitution, it is preferable that the melt viscosity at 80 캜 is 10000 Pa · s or less.

If the melt viscosity at 80 캜 is 10000 Pa · s or less, it can be bonded to the dicing sheet within a range at which the dicing sheet can withstand (for example, 90 ° C or less).

The die-bonding film with a dicing sheet according to the fourth aspect of the present invention is characterized in that the thermosetting die-bonding film and the dicing sheet are laminated with the surface having a surface roughness Ra as a bonding surface.

According to the above configuration, since the thermosetting die-bonding film and the dicing sheet are laminated with the one surface as a bonding surface, the peeling force when peeling the thermosetting die-bonding film from the dicing sheet can be stabilized have.

In the method for producing a thermosetting die-bonding film of the fourth aspect of the present invention,

As a method of producing the thermosetting die-bonding film described above,

A step of coating an adhesive composition solution for forming a thermosetting die-bonding film on a first separator to form a coating film;

The second separator is superimposed on the coating film and the coating film is applied to the first separator and the second separator at a temperature of 40 to 100 占 폚 and at a pressure of 0.1 to 1.0 mPa at a speed of 1 to 20 m / To form a thermosetting die bonding film.

According to the above configuration, the coating film is sandwiched between the first separator and the second separator within a range of 1 to 20 m / min at a temperature of 40 to 100 占 폚 and a pressure of 0.1 to 1.0 Pa, Thereby forming a thermosetting die-bonding film. Therefore, the coating film is planarized between the first separator and the second separator. As a result, even if a thermoconductive particle having a thermal conductivity of 12 W / m · K or more is contained in an amount of 75% by weight or more based on the total amount of the thermosetting die-bonding film, a surface having a small surface irregularity and a surface roughness Ra of 200 nm or less, A thermosetting die-bonding film can be produced.

According to a fourth aspect of the present invention,

A step of preparing the die bonding film with a dicing sheet described above,

A bonding step of bonding the thermosetting die bonding film of the die bonding film with the dicing sheet to the back surface of the semiconductor wafer,

A dicing step of dicing the semiconductor wafer together with the thermosetting die bonding film to form a semiconductor chip on the chip,

A pickup step of picking up the semiconductor chip together with the thermosetting die bonding film from the die bonding film with the dicing sheet,

And a die bonding step of die bonding the semiconductor chip onto the adherend via the thermosetting die bonding film.

Since the dicing sheet with a dicing sheet is laminated with the thermosetting die-bonding film and the dicing sheet as the bonding surfaces, the peeling of the thermosetting die-bonding film from the dicing sheet The force can be stabilized. Therefore, the pickup process can be performed steadily.

Hereinafter, the fourth aspect of the present invention will be described in detail based on the fourth embodiment, but the fourth invention is not limited thereto.

[Embodiment 4]

(Die bonding film with dicing sheet)

The thermosetting die bonding film (hereinafter also referred to as &quot; die bonding film &quot;) according to Embodiment 4 and the die bonding film with a dicing sheet will be described below. The die bonding film according to the fourth embodiment is a state in which the dicing sheet is not bonded to the die bonding film with a dicing sheet described below. Therefore, in the following, a die bonding film with a dicing sheet will be described, and a die bonding film will be described.

As shown in Fig. 8, the die bonding film with dicing sheet 410 has a structure in which the die bonding film 403 is laminated on the dicing sheet 11. As shown in Fig. The dicing sheet 11 is constituted by laminating a pressure-sensitive adhesive layer 2 on a base material 1 and a die bonding film 403 is provided on the pressure-sensitive adhesive layer 2. [ The die bonding film 403 has a work attaching portion 403a for attaching a work and a peripheral portion 403b disposed around the work attaching portion 403a. As shown in Fig. 9, the dicing sheet-attached die bonding film 412 may be provided with a die bonding film 403 'only on the work attachment portion.

The die bonding films 403 and 403 'preferably contain not less than 75% by weight and not less than 80% by weight of the thermally conductive particles having a thermal conductivity of not less than 12 W / m · K with respect to the entire thermosetting die-bonding film, % Or more. The content of the thermally conductive particles is preferably as large as possible but not more than 93% by weight, for example, from the viewpoint of film formability. When the thermoconductive particles having a thermal conductivity of 12 W / m · K or more are contained in an amount of 75% by weight or more based on the total amount of the thermosetting die bonding film, the semiconductor device manufactured using the thermosetting die bonding film has excellent heat dissipation. On the other hand, the thermal conductivity of the thermally conductive particles can be estimated from the crystal structure of the thermally conductive particles obtained by the X-ray structure analysis.

The die bonding films 403 and 403 'preferably have a thermal conductivity after heat curing of 1 W / m · K or more, more preferably 1.2 W / m · K or more, and more preferably 1.5 W / m · K or more. If the thermal conductivity after heat curing is 1 W / m · K or more, the semiconductor device manufactured using the die bonding films 403 and 403 'is more excellent in heat dissipation. On the other hand, the larger the thermal conductivity of the die bonding films 403 and 403 'after heat curing is, the more preferable is 20 W / m · K or less.

The "thermal conductivity after heat curing" refers to the thermal conductivity after heating at 130 ° C for 1 hour and then heating at 175 ° C for 5 hours.

The surface roughness Ra of one side of the die bonding films 403 and 403 'is 200 nm or less. Specifically, when the die bonding films 403 and 403 'are formed so as not to be laminated with the dicing sheet 11, the surface roughness Ra of at least one surface is 200 nm or less. In this case, when a surface having a surface roughness Ra of 200 nm or less is bonded as a bonding surface onto the dicing sheet, the peeling force at the time of peeling from the dicing sheet can be stabilized.

When the die bonding films 403 and 403 'are laminated with the dicing sheet 11, the surface roughness Ra of the bonding surface with the dicing sheet is 200 nm or less. In this case, since the die bonding films 403 and 403 'and the dicing sheet 11 are laminated with the surface having a surface roughness Ra of 200 nm or less as a bonding surface, the die bonding films 403 and 403' The peeling force at the time of peeling from the sheet 11 can be stabilized. The surface roughness Ra is preferably 150 nm or less. The surface roughness Ra is preferably as small as possible, but may be, for example, 10 nm or more.

The die-bonding films 403 and 403 'preferably have a melt viscosity at 80 ° C of 10,000 Pa · s or less, more preferably 8000 Pa · s or less, and still more preferably 5,000 Pa · s or less. Since the dicing sheet 11 has a temperature at which the dicing sheet 11 can withstand generally 90 ° C or lower, when the die bonding films 403 and 403 'are bonded onto the dicing sheet 11, It is necessary to bond under temperature conditions that can withstand. Therefore, when the melt viscosity of the die bonding films 403 and 403 'at 80 ° C is 10000 Pa · s or lower, the dicing sheet 11 is allowed to stand at a temperature at which the dicing sheet 11 can withstand Can be bonded. The melt viscosity of the die-bonding films 403 and 403 'at 80 ° C is preferably small, but may be, for example, 100 Pa · s or more from the viewpoint of maintaining the shape of the film. On the other hand, the melt viscosity at 80 캜 refers to a value obtained by setting the shear rate to 5 (1 / sec) as a measurement condition.

The die-bonding films 403 and 403 'preferably have a melt viscosity within a range of 10 Pa · s to 300 Pa · s at 130 ° C., more preferably within a range of 20 Pa · s to 280 Pa · s, More preferably in a range of from s to 250 Pa · s. When the melt viscosity at 130 占 폚 is in the range of 10 Pa · s to 300 Pa · s, the film has a relatively low viscosity while maintaining the shape of the film. Therefore, it is possible to sufficiently follow the unevenness of the adherend such as a printed wiring board, and the occurrence of voids can be suppressed.

On the other hand, the melt viscosity at 130 캜 refers to a value obtained by setting the shear rate to 5 (1 / sec) as a measurement condition.

The thermal conductive particles were made of alumina particles having a thermal conductivity of 36 W / m 占), zinc oxide particles having a thermal conductivity of 54 W / m 占 K, aluminum nitride particles having a thermal conductivity of 150 W / m 占, and silicon nitride particles having a thermal conductivity of 27 W / m / K), silicon carbide particles (thermal conductivity: 200W / mK), magnesium oxide particles (thermal conductivity: 59W / mK) and boron nitride particles (thermal conductivity: 60W / mK) At least one kind of particle is preferable. Particularly, alumina is preferable because of its high thermal conductivity, dispersibility, and availability. Further, since boron nitride has a higher thermal conductivity, it can be suitably used.

The thermally conductive particles are preferably treated (pretreated) with a silane coupling agent. As a result, the dispersibility of the thermally conductive particles becomes favorable, and the thermal conductivity of the thermally conductive particles can be improved, and the decrease in the thermal conductivity due to coagulation can be prevented. Further, cohesion is suppressed, so that the surface roughness can be lowered.

Suitable silane coupling agents are as described in Embodiment 1.

The method of treating the thermally conductive particles with a silane coupling agent is not particularly limited and includes a wet method in which thermally conductive particles and a silane coupling agent are mixed in a solvent, a dry method in which thermally conductive particles and a silane coupling agent are treated in a gas phase .

The throughput of the silane coupling agent is not particularly limited, but it is preferable to treat the silane coupling agent in an amount of 0.05 to 5 parts by weight based on 100 parts by weight of the thermally conductive particles.

The shape of the thermally conductive particles is not particularly limited and may be, for example, flake, needle, filament, spherical, or scaly, but it is preferably spherical in view of improvement of dispersibility and filling rate.

The average particle diameter of the thermally conductive particles is preferably from 1 탆 to 10 탆, and more preferably from 1.5 탆 to 8 탆. By setting the average particle diameter of the thermally conductive particles to 1 占 퐉 or more, wettability of the thermosetting die-bonding film to an adherend or a semiconductor wafer can be ensured to exhibit good adhesiveness. By setting the average particle diameter to 10 占 퐉 or less, This is because the effect of improving the thermal conductivity by adding the thermally conductive particles can be improved. In addition, the thickness of the thermosetting die-bonding film can be reduced according to the average particle diameter in the above range, and furthermore, the semiconductor chip can be made into a solid layer and the thermosetting particles protrude from the thermosetting die- The generation of chip cracks can be prevented. On the other hand, the average particle diameter of the thermally conductive particles is a value obtained by a photometer of a particle size distribution meter (manufactured by HORIBA, device name: LA-910).

As the thermally conductive particles, two or more thermally conductive particles having different average particle diameters may be used. This is because, by using two or more thermally conductive particles having different average particle diameters, the filling rate can be easily improved.

The lamination structure of the die bonding films 403 and 403 'is not particularly limited and may be, for example, a single layer of an adhesive layer, or a multi-layer structure in which an adhesive layer is formed on one side or both sides of a core material. The core material may be a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film or the like), a resin substrate reinforced with glass fiber or non- And the like.

The die bonding films 403 and 403 'preferably include a resin component such as a thermoplastic resin or a thermosetting resin.

Examples of the thermosetting resin include a phenol resin, an amino resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. These resins may be used alone or in combination of two or more. Particularly, an epoxy resin containing a small amount of ionic impurities which corrodes semiconductor chips is preferable. As the curing agent of the epoxy resin, a phenol resin is preferable.

The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition and examples thereof include epoxy resins such as bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, A bifunctional epoxy resin or a polyfunctional epoxy resin such as a fluorene type, a fluorene type, a phenol novolac type, an orthocresol novolac type, a tris hydroxyphenyl methane type and a tetraphenylol ethene type, Epoxy isocyanurate type epoxy resin, or glycidyl amine type epoxy resin. These may be used alone or in combination of two or more. Of these epoxy resins, novolak type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins and tetraphenylol ethane type epoxy resins are particularly preferable. These epoxy resins are rich in reactivity with a phenol resin as a curing agent and have excellent heat resistance.

The epoxy resin may be used in combination of two types, that is, a solid at room temperature and a liquid at room temperature. By adding an epoxy resin which is liquid at room temperature to an epoxy resin which is solid at normal temperature, it is possible to improve the vulnerability when the film is formed, and workability can be improved.

Of these, from the viewpoint of lowering the melt viscosity at 80 占 폚 of the thermosetting die-bonding film, it is preferable that the softening point of the epoxy resin is 80 占 폚 or lower.

On the other hand, the softening point of the epoxy resin can be measured by the ring method specified in JIS K 7234-1986.

The phenolic resin acts as a curing agent for the epoxy resin. Examples of the phenolic resin include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butyl phenol novolak resins, Type phenol resins, resole-type phenol resins, and polyoxystyrenes such as polyparaxyxystyrene. These may be used alone or in combination of two or more. Of these phenolic resins, phenol novolac resins and phenol aralkyl resins are particularly preferable. This is because connection reliability of the semiconductor device can be improved.

Among them, from the viewpoint of lowering the melt viscosity at 80 캜 of the thermosetting die-bonding film, it is preferable that the softening point of the phenol resin is 80 캜 or lower.

On the other hand, the softening point of the phenol resin can be measured by the ring method specified in JIS K 6910-2007.

The mixing ratio of the epoxy resin to the phenol resin is preferably such that the hydroxyl group in the phenol resin is equivalent to 0.5 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component. More suitable is 0.8 to 1.2 equivalents. That is, if the mixing ratio of the two is out of the above range, sufficient curing reaction does not proceed and the properties of the epoxy resin cured product tend to deteriorate.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, A polyamide resin such as 6-nylon or 6,6-nylon, a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET or PBT, a polyamideimide resin, or a fluororesin. These thermoplastic resins may be used alone or in combination of two or more. Among these thermoplastic resins, an acrylic resin which is low in ionic impurities and high in heat resistance and can secure the reliability of a semiconductor chip is particularly preferable.

A suitable acrylic resin is as described in the first embodiment.

The content of the resin component is preferably at least 7% by weight based on the entirety of the die-bonding films 403 and 403 '. The content of the resin component is preferably 25% by weight or less, more preferably 20% by weight or less, and even more preferably 15% by weight or less, based on the entirety of the die bonding films 403 and 403 '.

The mixing ratio of the thermosetting resin in the resin component (the total amount of the thermosetting resin and the thermoplastic resin) is not particularly limited as far as the die bonding films 403 and 403 'exhibit a function as a thermosetting type when heated under predetermined conditions Is preferably within a range of 75 to 99 wt%, and more preferably within a range of 85 to 98 wt% in order to lower the melt viscosity at 80 캜.

The blending ratio of the thermoplastic resin in the resin component is preferably in the range of 1 to 25 wt%, more preferably in the range of 2 to 15 wt%, in order to lower the melt viscosity at 80 캜.

The die bonding films 403 and 403 'preferably include a curing catalyst. Thus, thermal curing of the curing agent such as epoxy resin and phenol resin can be promoted. The curing catalyst is not particularly limited and examples thereof include tetraphenylphosphonium tetraphenylborate (trade name: TPP-K), tetraphenylphosphonium tetra-p-triborate (trade name: TPP-MK), triphenylphosphine triphenylborane Boron-based curing catalysts such as TPP-S (product name: TPP-S) (all manufactured by Hokko Chemical Industry Co., Ltd.). Among them, tetraphenylphosphonium tetra-p-triborate is preferable because of its excellent latency and good storage stability at room temperature.

The content of the curing catalyst can be appropriately set, but is preferably 0.1 to 3 parts by weight, more preferably 0.5 to 2 parts by weight based on 100 parts by weight of the thermosetting resin.

When the die bonding films 403 and 403 'are previously crosslinked to some extent, it is preferable to add a polyfunctional compound which reacts with functional groups at the molecular chain terminals of the polymer as a crosslinking agent. This makes it possible to improve the adhesive property under high temperature and to improve the heat resistance.

Suitable crosslinking agents are as described in Embodiment 1.

Further, the die bonding films 403 and 403 'may suitably contain fillers other than the above-mentioned thermally conductive particles depending on the use thereof. The mixing of the filler makes it possible to control the elastic modulus and the like. Specific examples of the filler are as described in the first embodiment.

On the other hand, other additives may be appropriately added to the die bonding films 403 and 403 ', if necessary, in addition to the filler. Specific examples of other additives are the same as those described in the first embodiment.

The thickness of the die bonding films 403 and 403 '(the total thickness in the case of a laminate) is not particularly limited, but is preferably 1 to 200 mu m from the viewpoint of compatibility between chip breaking surfaces and cracking prevention by adhesive layers More preferably 3 to 100 占 퐉, and still more preferably 5 to 80 占 퐉.

The die bonding films 410 and 412 'with a dicing sheet are formed on the base material 1, the pressure-sensitive adhesive layer and the die bonding film in such a manner that static electricity is generated during bonding and peeling thereof, It is possible to provide an antistatic function for the purpose of preventing the circuit from being broken. The provision of the antistatic function can be achieved by a method of adding an antistatic agent or a conductive material to the substrate 1, the pressure-sensitive adhesive layer 2, the die bonding films 403 and 403 ', the method of adding a charge transfer complex to the substrate 1, Or the like can be carried out in a suitable manner. These methods are preferable in a method in which impurity ions which may deteriorate the semiconductor wafer are hardly generated. Examples of the conductive material (conductive filler) blended for the purpose of imparting conductivity and improving the conductivity include spherical, needle-shaped, flaky metal powder such as silver, aluminum, gold, copper, nickel, and conductive alloy, amorphous carbon black, graphite And the like.

It is preferable that the die bonding films 403 and 403 'of the dicing sheet-attached die bonding films 410 and 412' are protected by a separator (not shown). The separator has a function as a protecting material for protecting the die bonding films 403 and 403 'until it is provided for practical use. Further, the separator can be used as a supporting substrate for transferring the die bonding films 403 and 403 'to the pressure-sensitive adhesive layer 2 further. The separator is peeled off when the work is adhered on the die bonding films 403 and 403 'of the die bonding films 410 and 412' with the dicing sheet. As the separator, a plastic film or paper surface-coated with a releasing agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine-based releasing agent, or a long-chain alkyl acrylate-based releasing agent can be used.

(Production method of die bonding film)

The die bonding films 403 and 403 'are manufactured, for example, as follows.

First, an adhesive composition solution for forming the die bonding films 403 and 403 'is prepared. The adhesive composition solution is prepared by dissolving or dispersing an adhesive composition as a material for forming the die bonding films 403 and 403 'in a solvent (hereinafter, the solution also includes a dispersion). As described above, the adhesive composition is a mixture of thermally conductive particles, a thermoplastic resin, a thermosetting resin, and various other additives as required.

Next, the adhesive composition solution is coated on a first separator (not shown) to a predetermined thickness to form a coating film. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating.

Next, a second separator (not shown) is superimposed on the coating film, and the coating is carried out at a speed of 1 m / min to 20 m / min under the conditions of a temperature of 40 ° C. to 100 ° C. and a pressure of 0.01 MPa to 1.0 Pa. The film is sandwiched between the first separator and the second separator to form die bonding films 403 and 403 '. The above temperature is more preferably 45 ° C to 95 ° C, and more preferably 50 ° C to 90 ° C. The pressure is more preferably 0.05 Pa to 5 Pa, and more preferably 0.1 Pa to 3 Pa. The speed is more preferably 2 to 15 m / min, and more preferably 3 to 10 m / min.

The coating film is sandwiched and held between the first separator and the second separator at a speed of 1 to 20 m / min under the conditions of a temperature of 40 to 100 占 폚 and a pressure of 0.1 to 1.0 Pa to form a die bonding film 403 , 403 '), the coating film is planarized between the first separator and the second separator. That is, the thermally conductive particles partially protruding from the surface of the coating film are pressed into the film of the die bonding films 403 and 403 'by pressurization, and the surface is planarized. As a result, even when a large amount of thermoconductive particles having a thermal conductivity of 12 W / m · K or more is contained in an amount of 75 wt% or more with respect to the entire die bonding film, a surface having a small surface irregularity and a surface roughness Ra of 200 nm or less is provided on at least one side The die-bonding films 403 and 403 'can be produced.

(Production method of die bonding film with dicing sheet)

The dicing sheet-attached die bonding films 410 and 412 'according to the present embodiment are manufactured, for example, as follows.

First, the base material 1 can be formed by a conventionally known film-forming method. Examples of the film-forming method include a calendar film-forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method and the like.

Next, a pressure-sensitive adhesive composition solution is applied onto the base material 1 to form a coating film, and then the coating film is dried under predetermined conditions (heating crosslinking if necessary) to form a pressure-sensitive adhesive layer 2. [ The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. The drying conditions are, for example, within a range of a drying temperature of 80 to 150 DEG C and a drying time of 0.5 to 5 minutes. Further, the pressure-sensitive adhesive composition may be coated on the separator to form a coating film, and then the coating film may be dried under the above drying conditions to form the pressure-sensitive adhesive layer (2). Thereafter, the pressure-sensitive adhesive layer 2 is bonded to the substrate 1 together with the separator. Thus, the dicing sheet 11 is produced.

Subsequently, the separator is peeled off from the dicing sheet 11 and the dicing films 3 and 3 ', respectively, and the pressure-sensitive adhesive layer 2 of the dicing sheets 3 and 3' So that both are bonded. At this time, the surface having a surface roughness Ra of 100 nm or less of the die bonding films 403 and 403 'is bonded with the dicing sheet 11 (pressure-sensitive adhesive layer 2) as a bonding surface. The bonding can be performed, for example, by pressing. At this time, the lamination temperature is not particularly limited, and is preferably 30 to 50 占 폚, for example, and more preferably 35 to 45 占 폚. The linear pressure is not particularly limited, but is preferably 0.1 to 20 kgf / cm, more preferably 1 to 10 kgf / cm. Next, the base separator on the adhesive layer is peeled off to obtain the die bonding films 410, 412 'with the dicing sheet according to the present embodiment.

In the fourth embodiment, a semiconductor device can be manufactured by the same method as in the first embodiment. Since the die bonding film 403 and the dicing sheet 11 are bonded to each other with the surface having a surface roughness Ra of 100 nm or less as the bonding surface, the die bonding film 403 can be separated from the dicing sheet 11 The peeling force at the time of peeling can be stabilized. Therefore, the pickup process can be performed steadily. In addition, it is possible to suppress the occurrence of peeling or the like due to a small peeling force locally, and it is possible to prevent water from intruding between the dicing sheet 11 and the die bonding film 403 during dicing, for example .

<< Fifth invention >>

Hereinafter, the fifth invention will be described.

The fifth problem to be solved by the present invention

In order to make the die bonding film to have a high thermal conductivity, it is necessary to mix the thermally conductive thermally conductive particles with high filling. However, in the state where the die-bonding film is highly charged with the thermally conductive particles, there is a problem that the viscosity of the die-bonding film is increased due to the interaction between the thermally conductive particles and the resin, resulting in lowered fluidity and difficulty in adhering to the semiconductor wafer .

The fifth object of the present invention is to provide a method of manufacturing a semiconductor device capable of easily attaching a thermosetting die bonding film to a semiconductor wafer.

The inventors of the present invention have studied a manufacturing method of a semiconductor device in order to solve the aforementioned problems. As a result, it has been found that by adopting the following constitution, it becomes possible to easily adhere a thermosetting die-bonding film to a semiconductor wafer, thereby completing the fifth invention.

That is, in the method of manufacturing a semiconductor device according to the fifth invention,

Wherein the thermally conductive particles having a thermal conductivity of 12 W / m · K or more are contained in an amount of 75% by weight or more based on the entire thermosetting die-bonding film, the thermal conductivity after heat curing is 1 W / m · K or more, sec or less; and a step of preparing a thermosetting die-

And bonding the back surface of the semiconductor wafer to the thermosetting die-bonding film at a temperature of 80 DEG C or lower and a pressure of 1.0 MPa or lower.

According to the above arrangement, the thermosetting die-bonding film contains 75% by weight or more of the thermally conductive particles having a thermal conductivity of 12 W / m · K or more over the entire thermosetting die-bonding film, and the thermal conductivity after heat curing is 1 W / , It has high thermal conductivity.

Further, the thermosetting die-bonding film has a melt viscosity at 80 DEG C of 5,000 Pa · s or less, and thus has a low viscosity even at a relatively low temperature. Therefore, even when the thermosetting die-bonding film and the back surface of the semiconductor wafer are bonded at a temperature of 80 占 폚 or less and a relatively low pressure of 1.0 MPa or less in the bonding step, bonding can be reliably performed. Since the thermosetting die bonding film and the back surface of the semiconductor wafer can be bonded at a low pressure, cracking of the wafer at the time of mounting can be suppressed. Because wafers are thinned each year and are fragile, the risk of cracking the wafer increases if you try to mount the wafer at high pressure.

In the above configuration, it is preferable that the bonding in the bonding step is performed at a bonding speed of 5 to 20 mm / sec.

When the bonding in the bonding step is performed at a relatively high bonding speed of 5 to 20 mm / sec, the productivity is improved.

In the method of manufacturing a semiconductor device according to the fifth aspect of the present invention,

Wherein the thermally conductive particles having a thermal conductivity of 12 W / m · K or more are contained in an amount of 75% by weight or more based on the entire thermosetting die-bonding film, the thermal conductivity after heat curing is 1 W / m · K or more, a step of preparing a die bonding film with a dicing sheet having a thermosetting die bonding film laminated on a dicing sheet,

And bonding the back surface of the semiconductor wafer and the thermosetting die bonding film of the die bonding film with a dicing sheet at a temperature of 80 DEG C or lower and a pressure of 1.0 MPa or lower.

According to the above arrangement, the thermosetting die-bonding film contains 75% by weight or more of the thermally conductive particles having a thermal conductivity of 12 W / m · K or more over the entire thermosetting die-bonding film, and the thermal conductivity after heat curing is 1 W / , It has high thermal conductivity.

Further, the thermosetting die-bonding film has a melt viscosity at 80 DEG C of 5,000 Pa · s or less, and thus has a low viscosity even at a relatively low temperature. Therefore, even when the thermosetting die-bonding film and the back surface of the semiconductor wafer are bonded at a temperature of 80 占 폚 or less and a relatively low pressure of 1.0 MPa or less in the bonding step, bonding can be reliably performed. Since the thermosetting die bonding film and the back surface of the semiconductor wafer can be bonded at a low pressure, it is difficult to cause cracking of the wafer due to pressure.

In addition, since the thermosetting die bonding film is previously laminated on the dicing sheet, the step of attaching the thermosetting die bonding film to the dicing sheet can be omitted.

In the above configuration, it is preferable that the bonding in the bonding step is performed at a bonding speed of 5 to 20 mm / sec.

When the bonding in the bonding step is performed at a relatively high bonding speed of 5 to 20 mm / sec, the productivity is improved.

Hereinafter, the fifth embodiment of the present invention will be described in detail based on Embodiment 5, but the fifth invention is not limited thereto.

[Embodiment 5]

(Die bonding film with dicing sheet)

The thermosetting die bonding film (hereinafter also referred to as &quot; die bonding film &quot;) according to Embodiment 5 and the die bonding film with a dicing sheet will be described below. The die-bonding film according to Embodiment 5 is a state in which the dicing sheet is not bonded in the die-bonding film with a dicing sheet described below. Therefore, in the following, a die bonding film with a dicing sheet will be described, and a die bonding film will be described.

As shown in Fig. 10, the die bonding film with dicing sheet 510 has a structure in which a die bonding film 503 is laminated on the dicing sheet 11. As shown in Fig. The dicing sheet 11 is constituted by laminating a pressure-sensitive adhesive layer 2 on a base material 1 and a die bonding film 503 is provided on the pressure-sensitive adhesive layer 2. The die bonding film 503 has a work attaching portion 503a for attaching a work and a peripheral portion 503b disposed around the work attaching portion 503a. As shown in Fig. 11, as a modified example, the die bonding film 512 with a dicing sheet having the die bonding film 503 'only at the work attaching portion may be used.

The die bonding films 503 and 503 'preferably have a thermal conductivity after heat curing of 1 W / m · K or more, preferably 1.2 W / m · K or more, and more preferably 1.5 W / m · K or more. Since the thermal conductivity after heat curing is 1 W / m · K or more, the semiconductor device manufactured using the die bonding films 503 and 503 'is excellent in heat dissipation. On the other hand, the larger the thermal conductivity of the die bonding films 503 and 503 'is, the more preferable it is 20 W / m · K or less.

The "thermal conductivity after heat curing" refers to the thermal conductivity after heating at 130 ° C for 1 hour and then heating at 175 ° C for 5 hours.

The die bonding films 503 and 503 'preferably contain at least 75% by weight and at least 80% by weight of the thermally conductive particles having a thermal conductivity of 12 W / m · K or more with respect to the entire thermosetting die-bonding film, % Or more. Further, the content of the thermally conductive particles is preferably as large as possible but not more than 93% by weight, for example, from the viewpoint of film formability. When the thermoconductive particles having a thermal conductivity of 12 W / m · K or more are contained in an amount of 75% by weight or more based on the entire thermosetting die-bonding film, the semiconductor device manufactured using the thermosetting die-bonding film is more excellent in heat radiation. On the other hand, the thermal conductivity of the thermally conductive particles can be estimated from the crystal structure of the thermally conductive particles obtained by the X-ray structure analysis.

The die-bonding films 503 and 503 'preferably have a melt viscosity at 80 ° C of 5,000 Pa · s or less, preferably 2,000 Pa · s or less, and more preferably 1,200 Pa · s or less. The melt viscosity at 80 캜 is preferably as small as possible, but may be 500 Pa · s or more, for example, from the viewpoint of maintaining the shape of the film. The die-bonding films 503 and 503 'have a melt viscosity at 80 ° C of 5,000 Pa · s or less and are low in viscosity even at a relatively low temperature. Therefore, in the bonding step (a step of bonding the die bonding film and the back surface of the semiconductor wafer) to be described later, the die bonding films 503 and 503 'and the back surface of the semiconductor wafer are heated at a temperature of 80 ° C or lower, Even if they are bonded at a low pressure, they can be reliably bonded. Since the die bonding films 503 and 503 'can be bonded to the back surface of the semiconductor wafer at a low pressure, cracks of the wafer due to pressure are hardly generated.

The die-bonding films 503 and 503 'preferably have a melt viscosity in a range of 10 Pa · s to 300 Pa · s at 130 ° C. and preferably in a range of 20 Pa · s to 280 Pa · s, and more preferably in the range of s to 250 Pa · s. When the melt viscosity at 130 占 폚 is in the range of 10 Pa · s to 300 Pa · s, the film has a relatively low viscosity while maintaining the shape of the film. Therefore, it is possible to sufficiently follow the unevenness of the adherend such as a printed wiring board, and the occurrence of voids can be suppressed. On the other hand, the melt viscosity at 130 캜 refers to a value obtained by setting the shear rate to 5 (1 / sec) as a measurement condition.

The thermal conductive particles were made of alumina particles having a thermal conductivity of 36 W / m 占), zinc oxide particles having a thermal conductivity of 54 W / m 占 K, aluminum nitride particles having a thermal conductivity of 150 W / m 占, and silicon nitride particles having a thermal conductivity of 27 W / m / K), silicon carbide particles (thermal conductivity: 200W / mK), magnesium oxide particles (thermal conductivity: 59W / mK) and boron nitride particles (thermal conductivity: 60W / mK) At least one kind of particle is preferable. Particularly, alumina is preferable because of its high thermal conductivity, dispersibility, and availability. Further, since boron nitride has a higher thermal conductivity, it can be suitably used.

The thermally conductive particles are preferably treated (pretreated) with a silane coupling agent. As a result, the dispersibility of the thermally conductive particles is improved, and the thermally conductive particles can be called up.

Suitable silane coupling agents are as described in Embodiment 1.

The method of treating the thermally conductive particles with a silane coupling agent is not particularly limited and includes a wet method in which thermally conductive particles and a silane coupling agent are mixed in a solvent, a dry method in which thermally conductive particles and a silane coupling agent are treated in a gas phase .

The throughput of the silane coupling agent is not particularly limited, but it is preferable to treat the silane coupling agent in an amount of 0.05 to 5 parts by weight based on 100 parts by weight of the thermally conductive particles.

The shape of the thermally conductive particles is not particularly limited and may be, for example, flake, needle, filament, spherical, or scaly, but spherical is preferable from the viewpoint of improvement of dispersibility and filling rate.

The average particle diameter of the thermally conductive particles is preferably from 1 탆 to 10 탆, and more preferably from 1.5 탆 to 8 탆. By setting the average particle diameter of the thermally conductive particles to 1 占 퐉 or more, wettability of the thermosetting die-bonding film to an adherend or a semiconductor wafer can be ensured to exhibit good adhesiveness. By setting the average particle diameter to 10 占 퐉 or less, This is because the effect of improving the thermal conductivity by adding the thermally conductive particles can be improved. In addition, the thickness of the thermosetting die-bonding film can be reduced according to the average particle diameter in the above range, and furthermore, the semiconductor chip can be made into a solid layer and the thermosetting particles protrude from the thermosetting die- The generation of chip cracks can be prevented. On the other hand, the average particle diameter of the thermally conductive particles is a value obtained by a photometer of a particle size distribution meter (manufactured by HORIBA, device name: LA-910).

As the thermally conductive particles, two or more thermally conductive particles having different average particle diameters may be used. This is because the filling rate can be easily improved by using two or more thermally conductive particles having different average particle diameters.

The lamination structure of the die bonding films 503 and 503 'is not particularly limited and may be, for example, a single layer of an adhesive layer, or a multilayer structure in which an adhesive layer is formed on one or both sides of a core material. The core material may be a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film or the like), a resin substrate reinforced with glass fiber or non- And the like.

The die bonding films 503 and 503 'preferably include a resin component such as a thermoplastic resin or a thermosetting resin.

Examples of the thermosetting resin include a phenol resin, an amino resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. These resins may be used alone or in combination of two or more. Particularly, an epoxy resin containing a small amount of ionic impurities which corrodes semiconductor chips is preferable. As the curing agent of the epoxy resin, a phenol resin is preferable.

The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition and examples thereof include epoxy resins such as bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene A bifunctional epoxy resin or a polyfunctional epoxy resin such as a fluorene type, a fluorene type, a phenol novolac type, an orthocresol novolac type, a tris hydroxyphenyl methane type and a tetraphenylol ethene type, Epoxy isocyanurate type epoxy resin, or glycidyl amine type epoxy resin. These may be used alone or in combination of two or more. Of these epoxy resins, novolak type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins and tetraphenylol ethane type epoxy resins are particularly preferable. These epoxy resins are rich in reactivity with a phenol resin as a curing agent and have excellent heat resistance.

The epoxy resin may be used in combination of two types, that is, a solid at room temperature and a liquid at room temperature. By adding an epoxy resin which is liquid at room temperature to an epoxy resin which is solid at normal temperature, it is possible to improve the vulnerability when the film is formed, and workability can be improved.

Of these, from the viewpoint of lowering the melt viscosity at 80 占 폚 of the thermosetting die-bonding film, it is preferable that the softening point of the epoxy resin is 80 占 폚 or lower.

On the other hand, the softening point of the epoxy resin can be measured by the ring method specified in JIS K 7234-1986.

The phenolic resin acts as a curing agent for the epoxy resin. Examples of the phenolic resin include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butyl phenol novolak resins, Type phenol resins, resole-type phenol resins, and polyoxystyrenes such as polyparaxyxystyrene. These may be used alone or in combination of two or more. Of these phenolic resins, phenol novolac resins and phenol aralkyl resins are particularly preferable. This is because connection reliability of the semiconductor device can be improved.

Among them, from the viewpoint of lowering the melt viscosity at 80 캜 of the thermosetting die-bonding film, it is preferable that the softening point of the phenol resin is 80 캜 or lower.

On the other hand, the softening point of the phenol resin can be measured by the ring method specified in JIS K 6910-2007.

The mixing ratio of the epoxy resin to the phenol resin is preferably such that the hydroxyl group in the phenol resin is equivalent to 0.5 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component. More suitable is 0.8 to 1.2 equivalents. That is, if the mixing ratio of the two is out of the above range, sufficient curing reaction does not proceed and the properties of the epoxy resin cured product tend to deteriorate.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, A polyamide resin such as 6-nylon or 6,6-nylon, a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET or PBT, a polyamideimide resin, or a fluororesin. These thermoplastic resins may be used alone or in combination of two or more. Among these thermoplastic resins, an acrylic resin which is low in ionic impurities and high in heat resistance and can secure the reliability of a semiconductor chip is particularly preferable.

The preferred acrylic resin is as described in the first embodiment.

The content of the resin component is preferably at least 7% by weight based on the entirety of the die bonding films 503 and 503 '. The content of the resin component is preferably 25% by weight or less, more preferably 20% by weight or less, and even more preferably 15% by weight or less, based on the entirety of the die bonding films 503 and 503 '.

The compounding ratio of the thermosetting resin in the resin component (the total amount of the thermosetting resin and the thermoplastic resin) is not particularly limited as long as the die bonding films 503 and 503 'exhibit a function as a thermosetting type when heated under predetermined conditions Is preferably within a range of 75 to 99 wt%, and more preferably within a range of 85 to 98 wt% in order to lower the melt viscosity at 80 캜.

The blending ratio of the thermoplastic resin in the resin component is preferably in the range of 1 to 25 wt%, more preferably in the range of 2 to 15 wt%, in order to lower the melt viscosity at 80 캜.

The die bonding films 503 and 503 'preferably include a curing catalyst. Thus, thermal curing of the curing agent such as epoxy resin and phenol resin can be promoted. The curing catalyst is not particularly limited and examples thereof include tetraphenylphosphonium tetraphenylborate (trade name: TPP-K), tetraphenylphosphonium tetra-p-triborate (trade name: TPP-MK), triphenylphosphine triphenylborane Boron-based curing catalysts such as TPP-S (product name: TPP-S) (all manufactured by Hokko Chemical Industry Co., Ltd.). Among them, tetraphenylphosphonium tetra-p-triborate is preferable because of its excellent latency and good storage stability at room temperature.

The content of the curing catalyst can be appropriately set, but is preferably 0.1 to 3 parts by weight, more preferably 0.5 to 2 parts by weight based on 100 parts by weight of the thermosetting resin.

When the die bonding films 503 and 503 'are previously crosslinked to some extent, it is preferable to add a polyfunctional compound which reacts with functional groups at the molecular chain terminals of the polymer as a cross-linking agent. This makes it possible to improve the adhesive property under high temperature and to improve the heat resistance.

Suitable crosslinking agents are as described in Embodiment 1.

Further, the die bonding films 503 and 503 'may suitably contain fillers other than the thermally conductive particles according to the use thereof. The mixing of the filler makes it possible to control the elastic modulus and the like. Specific examples of the filler are as described in the first embodiment.

On the other hand, other additives may be appropriately added to the die bonding films 503 and 503 ', if necessary, in addition to the filler. Specific examples of other additives are the same as those described in the first embodiment.

The thickness of the die bonding films 503 and 503 '(total thickness in the case of a laminate) is not particularly limited, but is preferably 1 to 200 mu m from the viewpoint of compatibility between prevention of chip breaking surfaces and fixed holding by an adhesive layer More preferably 3 to 100 占 퐉, and still more preferably 5 to 80 占 퐉.

The dicing sheet-attached die bonding films 510 and 512 can be manufactured by the method described in the first embodiment or the like.

(Manufacturing Method of Semiconductor Device)

A method of manufacturing a semiconductor device according to Embodiment 5-1 and a method of manufacturing a semiconductor device according to Embodiment 5-2 according to Embodiment 5 will be described.

The method for manufacturing a semiconductor device according to Embodiment 5-1 is characterized in that the thermoconductive particles having a thermal conductivity of 12 W / m · K or more are contained in an amount of 75% by weight or more based on the total amount of the thermosetting die bonding film and the thermal conductivity after heat curing is 1 W / - &gt; K, and having a melt viscosity at &lt; RTI ID = 0.0 &gt; 80 C &lt;

And bonding the back surface of the semiconductor wafer to the thermosetting die-bonding film at a temperature of 80 DEG C or lower and a pressure of 1.0 MPa or lower.

The manufacturing method of a semiconductor device according to Embodiment 5-2 is characterized in that the thermoconductive particles having a thermal conductivity of 12 W / m · K or more are contained in an amount of 75% by weight or more based on the entire thermosetting die-bonding film and the thermal conductivity after heat- A step of preparing a die bonding film with a dicing sheet having a dicing sheet laminated with a thermosetting die bonding film having a melt viscosity of at least 5000 K · s and a melt viscosity at 80 ° C. of not more than 5000 Pa · s,

And bonding the back surface of the semiconductor wafer to the thermosetting die bonding film of the die bonding film with the dicing sheet at a temperature of 80 DEG C or lower and a pressure of 1.0 MPa or lower.

In the method of manufacturing a semiconductor device according to Embodiment 5-2, a die bonding film with a dicing sheet is used, whereas in the method of manufacturing a semiconductor device according to Embodiment 5-1, Are different and common in other respects. In the method of manufacturing a semiconductor device according to Embodiment 5-1, after a die bonding film is prepared and a step of bonding it to the dicing sheet is performed, the manufacturing method of the semiconductor device according to Embodiment 5-2 You can do the same. Therefore, a method of manufacturing a semiconductor device according to Embodiment 5-2 will be described below.

First, a die bonding film with a dicing sheet is prepared (preparation step). The die bonding films 510, 512 with the dicing sheet are peeled off the separators arbitrarily provided on the die bonding films 503, 503 ', and are used as follows. Hereinafter, a case in which the die bonding film with a dicing sheet 510 is used with reference to Fig. 12 will be described as an example.

The semiconductor wafer 4 is first pressed onto the semiconductor wafer attaching portion 503a of the die bonding film 503 in the die bonding film 510 with the dicing sheet so that the die bonding film 503 and the semiconductor wafer 4 are bonded to each other (bonding step). The present step can be carried out while being pressurized by a pressing means such as a press roll. The bonding temperature at the time of bonding is 80 DEG C or lower, preferably 75 DEG C or lower. The bonding temperature at the time of bonding may be, for example, 40 占 폚 or higher. The pressure at the time of bonding is 1.0 MPa or less, preferably 0.15 MPa or less. The pressure at the time of bonding may be, for example, 0.05 MPa or more. As described above, the die-bonding film 503 has a melt viscosity at 80 DEG C of 5,000 Pa · s or less and is low in viscosity even at a relatively low temperature. Therefore, even when the die bonding film 503 and the back surface of the semiconductor wafer 4 are bonded at a temperature of 80 占 폚 or less and a relatively low pressure of 1.0 MPa or less in this joining step, bonding can be reliably performed. Since the die bonding film 503 and the back surface of the semiconductor wafer 4 can be bonded at a low pressure, even a thin wafer (for example, a wafer having a thickness of 50 탆 or less) is excellent in that cracks due to pressure hardly occur.

The bonding speed at the time of bonding is preferably 5 to 20 mm / sec, more preferably 10 to 15 mm / sec. When the bonding speed is 5 to 20 mm / sec at a relatively high speed, productivity is improved.

Next, the semiconductor wafer 4 is diced (dicing step). As a result, the semiconductor wafer 4 is cut into a predetermined size and individualized to manufacture the semiconductor chip 5. The dicing method is not particularly limited, but is performed from the circuit surface side of the semiconductor wafer 4 according to a conventional method. In this step, for example, a cutting method called full cutting in which cutting is performed up to the die bonding film 510 with a dicing sheet can be adopted. The dicing apparatus used in this step is not particularly limited and conventionally known dicing apparatuses can be used. Further, since the semiconductor wafer is adhered and fixed by the die bonding film 510 with the dicing sheet, chip breakage and chip scattering can be suppressed, and breakage of the semiconductor wafer 4 can be suppressed .

Next, in order to peel off the semiconductor chip adhered and fixed to the die bonding film 510 with the dicing sheet, the semiconductor chip 5 is picked up (pickup step). The pick-up method is not particularly limited, and various conventionally known methods can be employed. For example, there is a method in which individual semiconductor chips 5 are pushed up by needles from the side of the die bonding film 510 with a dicing sheet, and the picked-up semiconductor chips 5 are picked up by a pickup device.

As a pickup condition, it is preferable that the needle push-up speed is 5 to 100 mm / sec, and more preferably 5 to 10 mm / sec, from the standpoint of chipping prevention.

Here, the pick-up is carried out after irradiating ultraviolet rays to the pressure-sensitive adhesive layer 2 when the pressure-sensitive adhesive layer 2 is of ultraviolet curing type. As a result, the adhesive force of the pressure-sensitive adhesive layer 2 to the die bonding film 503 is lowered, and the semiconductor chip 5 is easily peeled off. As a result, the semiconductor chip 5 can be picked up without damaging it. The conditions such as the irradiation intensity at the time of ultraviolet irradiation, the irradiation time, and the like are not particularly limited and may be suitably set according to necessity. As the light source used for ultraviolet irradiation, the above-described materials can be used. On the other hand, in the case where the pressure-sensitive adhesive layer is irradiated with ultraviolet rays to be cured, and the cured pressure-sensitive adhesive layer is bonded to the die-bonding film, ultraviolet irradiation is not required here.

Next, the semiconductor chip 5 picked up is bonded and fixed on the adherend 6 via the die bonding film 503 (die bonding step). Examples of the adherend 6 include a lead frame, a TAB film, a substrate, or a separately manufactured semiconductor chip. The adherend 6 may be, for example, a deformable adherend such as easily deformed or a non-deformable adherend (semiconductor wafer or the like) which is difficult to deform.

As the substrate, conventionally known ones can be used. As the lead frame, an organic substrate made of a metal lead frame such as a Cu lead frame or a 42 Alloy lead frame, or a glass epoxy, BT (bismaleimide-triazine), polyimide or the like can be used. However, the substrate is not limited to this, and includes a circuit board that mounts the semiconductor chip and can be used by being electrically connected to the semiconductor chip.

Next, since the die bonding film 503 is of a thermosetting type, the semiconductor chip 5 is adhered and fixed to the adherend 6 by heat curing to improve the heat resistance (heat curing step). The heating temperature may be 80 to 200 占 폚, preferably 100 to 175 占 폚, more preferably 100 to 140 占 폚. The heating time may be 0.1 to 24 hours, preferably 0.1 to 3 hours, and more preferably 0.2 to 1 hour. The heat curing may be performed under a pressurizing condition. The pressing condition may be 1 to 20 kg / cm 2 . Further, the pressing range is preferably within a range of 3 to 15 kg / cm &lt; 2 &gt;. The heating and curing under pressure can be performed, for example, in a chamber filled with an inert gas. Even when voids are formed between the die bonding film and the adherend in the die bonding step, the resin is dispersed in the resin without being swollen and can be visually lost when thermosetting is performed under pressure. As a result, the influence of voids can be reduced. On the other hand, the semiconductor chip 5 bonded to the substrate or the like through the die bonding film 503 can be provided in the reflow process.

The shear adhesive force of the die bonding film 503 after heat curing is preferably 0.2 MPa or more, and more preferably 0.2 to 10 MPa with respect to the adherend 6. When the die bonding film 503 has a shear adhesive strength of at least 0.2 MPa or more, the die bonding film 503 and the semiconductor chip 5 or the adherend 6 The shear deformation does not occur at the adhesive surface of the adhesive sheet. That is, the semiconductor chip does not move by the ultrasonic vibration at the time of wire bonding, thereby preventing the success rate of the wire bonding from being lowered.

12, the tip of the terminal portion (inner lead) of the adherend 6 and the electrode pad (not shown) on the semiconductor chip 5 are electrically connected to each other by a bonding wire 7 (Wire bonding process). As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire, or the like is used. The temperature at which wire bonding is carried out is carried out at 80 to 250 캜, preferably at 80 to 220 캜. Further, the heating time thereof is performed for several seconds to several minutes. The connection is performed by the combination of the vibration energy by the ultrasonic wave and the compression energy by the applied pressure while being heated to be within the above temperature range. This step can be carried out without thermally curing the die bonding film 503. In addition, in the process of the present step, the semiconductor chip 5 and the adherend 6 are not fixed by the die bonding film 503.

Next, as shown in Fig. 12, if necessary, the semiconductor chip 5 is sealed with the sealing resin 8 (sealing step). This step is performed in order to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step can be performed by molding a resin for encapsulation into a metal mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is usually 60 to 90 seconds at 175 DEG C, but the heating conditions are not limited to this, and curing can be performed at 165 to 185 DEG C for several minutes. Thus, the semiconductor chip 5 and the adherend 6 are fixed via the die bonding film 503, together with the curing of the sealing resin. That is, even when a post-curing step to be described later is not performed, the die bonding film 503 can be fixed in this step, which can contribute to a reduction in the number of manufacturing steps and a shortening of the manufacturing period of the semiconductor device. In the sealing step, a method of embedding the semiconductor chip 5 in a sheet for sealing on a sheet (see, for example, JP-A-2013-7028) may be adopted.

Next, heating is carried out as occasion demands, so that the sealing resin 8 hardly cured in the sealing step is completely cured (post-curing step). The die bonding film 503 can be completely thermally cured together with the encapsulating resin 8 in this step even if the die bonding film 503 is not completely thermally cured in the encapsulation process. The heating temperature in this step varies depending on the type of the encapsulating resin, but is in the range of 165 to 185 占 폚, for example, and the heating time is about 0.5 to 8 hours.

On the other hand, wire bonding is carried out after the hardening step by the die bonding step, without passing through the heat hardening step by the heat treatment of the die bonding film 503, and further the semiconductor chip 5 is sealed with the encapsulating resin, The resin may be cured (post cured). In this case, the shear adhesive force of the die bonding film 503 at the time of hardening is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the adherend 6. When the die bonding film 503 has a shear adhesive strength of at least 0.2 MPa or more at the time of attaching the die bonding film 503, even if the wire bonding process is performed without passing through the heating process, Shear deformation does not occur at the bonding surface of the semiconductor chip 5 or the adherend 6. That is, the semiconductor chip does not move by the ultrasonic vibration at the time of wire bonding, thereby preventing the success rate of the wire bonding from being lowered. On the other hand, the temporary bonding means that the die bonding film is hardened (semi-cured state) to such an extent that the curing reaction of the thermosetting die bonding film is not completely advanced, Is fixed. On the other hand, when the wire bonding is performed without passing through the heat curing step by the heat treatment of the die bonding film, the step of post curing corresponds to the heat curing step in this specification.

On the other hand, the die bonding film with a dicing sheet of the first to fifth inventions can be suitably used also in the case of stacking a plurality of semiconductor chips and performing three-dimensional mounting. At this time, the die bonding film and the spacer may be laminated between the semiconductor chips, or only the die bonding film may be laminated between the semiconductor chips without stacking the spacers, and may be appropriately changed according to the manufacturing conditions and applications.

<< Embodiment of the First Invention >>

Hereinafter, preferred embodiments of the first invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in this embodiment are not intended to limit the gist of the first aspect of the invention to them, unless otherwise specified.

The components used in the examples are described below.

Epoxy resin 1: JER827 (bisphenol A type epoxy resin, liquid at 25 占 폚, softening point: less than 25 占 폚) manufactured by Mitsubishi Chemical Corporation

Epoxy resin 2: KI-3000 (cresol novolak type epoxy resin, epoxy equivalence: 199 g / eq., Softening point: 64 캜)

Phenol resin MEH-7851-SS (phenol resin having a biphenylaralkyl skeleton, hydroxyl group equivalent: 203 g / eq., Softening point: 67 ° C) manufactured by Meiwa Chemical Co.,

Acrylic rubber: TAYASA RESIN SG-P3 (acrylic copolymer, Mw: 85,000, glass transition temperature: 12 占 폚) manufactured by Nagase Chemtex Co.,

Catalyst: TPP-MK (tetraphenylphosphonium tetra-p-triborate) manufactured by Hokko Chemical Industry Co.,

Filler 1: DAW-03 (spherical alumina filler, average particle diameter: 5.1 占 퐉, specific surface area: 0.5 m 2 / g, thermal conductivity: 36 W / m 占 K,

Filler 2: AO802 (spherical alumina filler, average particle size: 0.7 m, specific surface area: 7.5 m 2 / g, thermal conductivity: 36 W / m 占 K,

Silane coupling agents: Table 1

The surface treatment method of the filler will be described.

20 parts by weight of Filler 2 was mixed with 80 parts by weight of Filler 1. [ The mixture of filler 1 and filler 2 was treated with the silane coupling agent shown in Table 1 to obtain surface-treated fillers 1 to 7. The surface treatment was conducted by a dry method and treated with an amount of a silane coupling agent represented by the following formula.

Silane coupling agent throughput = (weight of filler (g) × specific surface area of filler (m 2 / g)) / minimum coverage of silane coupling agent (m 2 / g)

(M 2 / g) of the silane coupling agent = 6.02 × 10 23 × 13 × 10 -20 / molecular weight of the silane coupling agent

Figure pat00001

[Examples 1 to 7]

Fabrication of Die Bonding Film

An epoxy resin, a phenolic resin, an acrylic rubber, a catalyst and a surface-treated filler were dissolved and dispersed in methyl ethyl ketone (MEK) according to the compounding ratios shown in Table 2 to obtain an adhesive composition solution having a viscosity suitable for coating. Thereafter, the adhesive composition solution was coated on a mold releasing film (release liner) made of a polyethylene terephthalate film having a thickness of 50 占 퐉 which was subjected to silicon release treatment, and then dried at 130 占 폚 for 2 minutes to obtain a die bonding film &Lt; / RTI &gt;

[Comparative Examples 1 and 2]

Fabrication of Die Bonding Film

The epoxy resin, the phenolic resin, the acrylic rubber, the catalyst and the filler were dissolved and dispersed in methyl ethyl ketone (MEK) according to the compounding ratios shown in Table 2 to obtain an adhesive composition solution having a viscosity suitable for coating. Thereafter, the adhesive composition solution was coated on a mold releasing film (release liner) made of a polyethylene terephthalate film having a thickness of 50 占 퐉 which was subjected to silicon release treatment, and then dried at 130 占 폚 for 2 minutes to obtain a die bonding film &Lt; / RTI &gt;

[Comparative Example 3]

Preparation of die-bonding film An epoxy resin, a phenol resin, an acrylic rubber, a catalyst, a filler and a silane coupling agent were dissolved and dispersed in methyl ethyl ketone (MEK) according to the compounding ratio shown in Table 2 to prepare an adhesive composition solution &Lt; / RTI &gt; Thereafter, the adhesive composition solution was coated on a mold releasing film (release liner) made of a polyethylene terephthalate film having a thickness of 50 占 퐉 which was subjected to silicon release treatment, and then dried at 130 占 폚 for 2 minutes to obtain a die bonding film &Lt; / RTI &gt;

[evaluation]

The following evaluation was carried out using the obtained die-bonding film. The results are shown in Table 2.

(Filler dispersibility)

A piece of 50 mm x 50 mm x 25 m in thickness was cut out from the die bonding film, and the piece was measured for transmitted light using an optical microscope to confirm presence or absence of aggregates. The portion with the aggregate is darker than the portion without the aggregate because the transparency of the light is poor. A case where the aggregate having a size of 30 占 퐉 or more was present was judged as? (Good). And the case where there was no agglomerate having a size of 30 mu m or more was evaluated as x (poor).

(Adhesion to Silicon Wafer)

The die bonding film was peeled from the mold release film, and an adhesive tape (BT-315, manufactured by Nitto Denko Corporation) was bonded to the die bonding film surface in contact with the release film at room temperature using a hand roller. A section of 10 mm x 120 mm was cut out with a cutter knife from the laminate obtained by the bonding. On the hot plate at 65 占 폚, the die bonding film side of the piece was bonded to the 6 inch wafer using a 2 kg hand roller. After a lapse of 30 minutes from the completion of the bonding, the peeling adhesion when the piece was peeled from the wafer with a width of 10 mm was measured according to JIS Z 0237. On the other hand, the peeling angle was 180 degrees and the peeling speed was 300 mm / min. As a tensile tester, AGS-J (trade name) manufactured by Shimadzu Corporation, 50N load cell (model number: SM-50 N-168, capacity 50N, manufactured by Interface) was used. The case where the peel adhesion was 1 N / 10 mm or more was judged as O (good), and the case where the peel adhesion was less than 1 N / 10 mm was judged as X (poor).

(Measurement of average particle diameter of filler)

The die bonding film was placed in a crucible and was heat treated at 700 占 폚 for 2 hours in an atmospheric atmosphere to give a film. The obtained ash was dispersed in pure water and ultrasonicated for 10 minutes, and the average particle size was determined using a laser diffraction scattering particle size distribution analyzer (Beckman Coulter, "LS 13 320"; wet method). On the other hand, since the composition of the die-bonding film is an organic component other than the filler, substantially all the organic components disappear by the above heat treatment, and the obtained ash is regarded as a filler and the measurement is performed.

(Measurement of thermal conductivity)

And the thermal conductivity of the die bonding film after heat curing was measured. The thermal conductivity was obtained from the following equation. On the other hand, the thermal conductivity after heat curing is the thermal conductivity after heating at 130 占 폚 for 1 hour and then heating at 175 占 폚 for 5 hours.

(Thermal conductivity) = (thermal diffusion coefficient) x (specific heat) x (specific gravity)

Thermal diffusivity coefficient

The die bonding film was laminated to a thickness of 1 mm, and then punched into a circular shape having a diameter of 1 cm. Then, the mixture was heated at 130 占 폚 for 1 hour and then at 175 占 폚 for 5 hours. Using this sample, the thermal diffusivity was measured using a laser flash thermometer (TC-9000, manufactured by ULVAC Co., Ltd.).

specific heat

DSC (TA Instrument, Q-2000) according to the measuring method according to the standard of JIS-7123.

importance

And measured by the Archimedes method using an electronic balance (AEL-200, manufactured by Shimadzu Corporation).

(Measurement of melt viscosity at 130 占 폚)

The melt viscosity of the die-bonding film at 130 占 폚 before thermosetting was measured. The measurement was performed by a parallel plate method using a rheometer (RS-1 manufactured by HAAKE). That is, 0.1 g of the die-bonding film was taken as a sample, and this sample was put into a plate preliminarily heated to 130 캜. The melt viscosity was set to a value after 300 seconds from the start of measurement. The shear rate was 5 (1 / sec) and the gap between the plates was 0.1 mm.

(Evaluation of void)

Using a thermal laminate, a die bonding film was attached to a glass chip having a thickness of 100 占 퐉 in an area of 10 mm 占 10 mm to prepare sample chips. Next, the sample chip was placed on a BGA substrate (product name: CA-BGA (2), surface ten-point average roughness (Rz) = 11 to 13 탆) manufactured by Nihon Circuit Co., Ltd.) at 130 캜 for 2 kg for 2 seconds Bonding was performed. Thereafter, it was heated at 130 캜 for 1 hour under the pressurized condition, and subsequently heated at 175 캜 for 5 hours. Specifically, pressurization at the time of heating and curing was carried out by filling the oven with nitrogen gas at 5 kg / cm 2 . Observation was made from the glass side of the bonded sample chip using an optical microscope. The area occupied by the voids in the observed image was calculated using binarization software (WinRoof ver. 5.6). The case where the area occupied by the voids was less than 20% with respect to the surface area of the die-bonding film was evaluated as &quot;&quot;, and the case where the voids were not less than 20%

Figure pat00002

&Lt; Embodiment 2 of the present invention &gt;

Hereinafter, a preferred embodiment of the second invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in this embodiment are not intended to limit the gist of the second aspect of the present invention to them unless otherwise specified.

The components used in the examples are described below.

Epoxy resin: JER827 (bisphenol A type epoxy resin, Mw: 370, liquid phase at 25 占 폚, softening point: less than 25 占 폚) manufactured by Mitsubishi Chemical Corporation

Phenol resin MEH-7851-SS (phenol resin having a biphenylaralkyl skeleton, hydroxyl group equivalent: 203 g / eq., Softening point: 67 ° C) manufactured by Meiwa Chemical Co.,

Acrylic rubber: TAYASA RESIN SG-P3 (acrylic copolymer, Mw: 85,000, glass transition temperature: 12 占 폚) manufactured by Nagase Chemtex Co.,

Catalyst: TPP-MK (tetraphenylphosphonium tetra-p-triborate) manufactured by Hokko Chemical Industry Co.,

Filler 1: AO802 (spherical alumina filler, average particle diameter: 0.7 占 퐉, specific surface area: 7.5 m 2 / g, thermal conductivity: 36 W / m 占 K,

Filler 2: ASFP-20 (spherical alumina filler, average particle diameter: 0.3 탆, specific surface area: 12.5 m 2 / g, thermal conductivity: 36 W / m 揃 K,

Filler 3: AO809 (spherical alumina filler, average particle diameter: 10 탆, specific surface area: 1 m 2 / g, thermal conductivity: 36 W / m 揃 K)

Filler 4: DAW-07 (spherical alumina filler, average particle diameter: 8.1 탆, specific surface area: 0.4 m 2 / g, thermal conductivity: 36 W / m 揃 K, density: 0.91) manufactured by Denki Kagaku Kogyo Co.,

Filler material 5: DAW-03 (spherical alumina filler, average particle diameter: 5.1 占 퐉, specific surface area: 0.5 m 2 / g, thermal conductivity: 36 W / m 占 K, diameter: 0.9) manufactured by Denki Kagaku Kogyo Co.,

Silane coupling agent: KBM-503 (3-methacryloxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co.,

The surface treatment method of the filler will be described.

The fillers 1 to 5 were surface-treated with a silane coupling agent to obtain surface-treated fillers 1 to 5. The surface treatment was conducted by a dry method and treated with an amount of a silane coupling agent represented by the following formula.

Silane coupling agent throughput = (weight of filler (g) × specific surface area of filler (m 2 / g)) / minimum coverage of silane coupling agent (m 2 / g)

(M 2 / g) of the silane coupling agent = 6.02 × 10 23 × 13 × 10 -20 / molecular weight of the silane coupling agent

[Examples and Comparative Examples]

Fabrication of Die Bonding Film

An epoxy resin, a phenolic resin, an acrylic rubber, a catalyst, and a surface treatment filler were dissolved and dispersed in methyl ethyl ketone (MEK) according to the compounding ratios shown in Table 3 to obtain an adhesive composition solution having a viscosity suitable for coating. Thereafter, the adhesive composition solution was coated on a mold releasing film (release liner) made of a polyethylene terephthalate film having a thickness of 50 占 퐉 which was subjected to silicon release treatment, and then dried at 130 占 폚 for 2 minutes to obtain a die bonding film &Lt; / RTI &gt;

[evaluation]

The following evaluation was carried out using the obtained die-bonding film. The results are shown in Table 3.

(Measurement of Particle Size Distribution and Average Particle Size of Filler)

The die bonding film was placed in a crucible and was heat treated at 700 占 폚 for 2 hours in an atmospheric atmosphere to give a film. The obtained ash was dispersed in pure water and ultrasonicated for 10 minutes. The particle size distribution (volume basis) and the average particle size were determined using a laser diffraction scattering particle size distribution analyzer (Beckman Coulter, "LS 13 320"; wet method). On the other hand, since the composition of the die-bonding film is an organic component other than the filler, substantially all the organic components disappear by the above heat treatment, and the obtained ash is regarded as a filler and the measurement is performed.

(Measurement of BET specific surface area of filler)

The BET specific surface area was measured by the BET adsorption method (multi-point method). Concretely, the ash obtained according to the above-mentioned "measurement of particle size distribution and average particle size of the filler" was measured at 110 ° C. for 6 hours or more using the Quantachrome fourth mode specific surface area / pore distribution measuring device "NOVA-4200e type" After vacuum degassing, the temperature was measured at 77.35 K in nitrogen gas.

(Measurement of thermal conductivity)

And the thermal conductivity of the die bonding film after heat curing was measured. The thermal conductivity was obtained from the following equation. On the other hand, the thermal conductivity after heat curing is the thermal conductivity after heating at 130 占 폚 for 1 hour and then heating at 175 占 폚 for 5 hours.

(Thermal conductivity) = (thermal diffusion coefficient) x (specific heat) x (specific gravity)

Thermal diffusivity coefficient

The die bonding film was laminated to a thickness of 1 mm, and then punched into a circular shape having a diameter of 1 cm. Then, the mixture was heated at 130 占 폚 for 1 hour and then at 175 占 폚 for 5 hours. Using this sample, the thermal diffusivity was measured using a laser flash thermometer (TC-9000, manufactured by ULVAC Co., Ltd.).

specific heat

DSC (TA Instrument, Q-2000) according to the measuring method according to the standard of JIS-7123.

importance

And measured by the Archimedes method using an electronic balance (AEL-200, manufactured by Shimadzu Corporation).

(Burial property)

Using a thermal laminate, a die bonding film was attached to a glass chip having a thickness of 100 占 퐉 in an area of 10 mm 占 10 mm to prepare sample chips. Next, the sample chip was placed on a BGA substrate (product name: CA-BGA (2), surface ten-point average roughness (Rz) = 11 to 13 탆) manufactured by Nihon Circuit Co., Ltd.) at 130 캜 for 2 kg for 2 seconds Bonding was performed. Thereafter, it was heated at 130 캜 for 1 hour under the pressurized condition, and subsequently heated at 175 캜 for 5 hours. Specifically, pressurization at the time of heating and curing was carried out by filling the oven with nitrogen gas at 5 kg / cm 2 . Observation was made from the glass side of the bonded sample chip using an optical microscope. The area occupied by the voids in the observed image was calculated using binarization software (WinRoof ver. 5.6). The case where the area occupied by the voids was less than 20% with respect to the surface area of the die-bonding film was evaluated as &quot;&quot;, and the case where the voids were not less than 20%

(Reliability (Humidity Reflowability))

The die bonding film was attached to a 10 mm square semiconductor chip at a temperature of 40 캜, and then the semiconductor chip was mounted on the BGA substrate via the die bonding film. The mounting conditions were 120 deg. C, 0.1 MPa pressure, 1 sec. Next, the BGA substrate on which the semiconductor chip was mounted was heat-treated at 130 ° C for 1 hour by a dryer. And then packed with a sealing resin (GE-100, manufactured by Nitto Denko Corporation) to obtain a semiconductor package. The sealing conditions were a heating temperature of 175 DEG C for 90 seconds. Thereafter, the semiconductor package was placed in an IR reflow furnace in which the moisture absorption was carried out under the conditions of 85 캜, 60% Rh and 168 hours, and further held at 260 캜 or higher for 10 seconds. Thereafter, the semiconductor package was cut with a glass cutter, and its cross-section was observed by an ultrasonic microscope to check whether or not there was separation at the boundary between the die bonding film and the BGA substrate. The confirmation was made with respect to 9 semiconductor chips, and the case where the number of semiconductor chips with peeling was 0 was evaluated as &quot; o &quot;

Figure pat00003

&Lt; Third embodiment of the present invention &gt;

Hereinafter, preferred embodiments of the third aspect of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in this embodiment are not intended to limit the gist of the third aspect of the present invention to them, unless otherwise specified.

The components used in the examples are described below.

Epoxy resin 1: JER827 (bisphenol A type epoxy resin, Mw: 370, liquid at 25 占 폚, softening point: less than 25 占 폚) manufactured by Mitsubishi Chemical Corporation

Epoxy resin 2: YDF-2001 (Bisphenol F type epoxy resin, softening point: 50 to 60 캜) manufactured by Shin Nittsu Co.,

Phenol resin MEH-7851-SS (phenol resin having a biphenylaralkyl skeleton, hydroxyl group equivalent: 203 g / eq., Softening point: 67 ° C) manufactured by Meiwa Chemical Co.,

Acrylic rubber: TAYASA RESIN SG-70L (acrylic copolymer, Mw: 900,000, glass transition temperature: -13 DEG C) manufactured by Nagase Chemtex Co.,

Catalyst: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Chemical Industry Co.,

FWD: 05 (spherical alumina filler, average particle diameter: 5 m, specific surface area: 0.4 m 2 / g, thermal conductivity: 36 W /

Filler 2: AO802 (spherical alumina filler, average particle diameter: 0.6 占 퐉, thermal conductivity: 36 W / m 占 K, Jindo degree: 0.95) manufactured by Admatechs Co.,

Silane coupling agent: KBM-503 (3-methacryloxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co.,

The surface treatment method of the filler will be described.

The fillers 1 to 2 were surface-treated with a silane coupling agent to obtain surface-treated fillers 1 to 2. The surface treatment was conducted by a dry method and treated with an amount of a silane coupling agent represented by the following formula.

Silane coupling agent throughput = (weight of filler (g) × specific surface area of filler (m 2 / g)) / minimum coverage of silane coupling agent (m 2 / g)

(M 2 / g) of the silane coupling agent = 6.02 × 10 23 × 13 × 10 -20 / molecular weight of the silane coupling agent

[Examples and Comparative Examples]

Fabrication of Die Bonding Film

An epoxy resin, a phenolic resin, an acrylic rubber, a catalyst, and a surface-treated filler were dissolved and dispersed in methyl ethyl ketone (MEK) according to the compounding ratios shown in Table 4 to obtain an adhesive composition solution having a viscosity suitable for coating. Thereafter, the adhesive composition solution was coated on a mold releasing film (release liner) made of a polyethylene terephthalate film having a thickness of 50 占 퐉 which was subjected to silicon release treatment, and then dried at 130 占 폚 for 2 minutes to obtain a die bonding film &Lt; / RTI &gt;

[evaluation]

The following evaluation was carried out using the obtained die-bonding film. The results are shown in Table 4.

(Measurement of linear expansion coefficient)

A die bonding film was laminated to form a laminate having a thickness of 1000 mu m, and then the laminate was punched with a diameter of 4 mm (diameter). The laminate of 4 mm? Was heated at 130 占 폚 for 1 hour and then heated at 175 占 폚 for 5 hours to cure to obtain a measurement sample. The sample to be measured was set on a measuring jig of a thermomechanical analyzer (TMA8310 manufactured by Rigaku Corporation), and then subjected to measurement at a temperature of -50 to 300 占 폚 under a press-in load of 0.003 N, a probe diameter of 3 mm ?, and a heating rate of 5 占 폚 / Under the above-mentioned conditions. The coefficient of linear expansion (CTE alpha 1) at a temperature lower than the glass transition point is calculated from the expansion coefficient at 50 ° C to 70 ° C and the linear expansion coefficient (CTE alpha 2) at a temperature exceeding the glass transition point from the expansion coefficient at 140 ° C to 180 ° C Respectively.

(Measurement of glass transition point and measurement of storage elastic modulus at 260 占 폚)

A die bonding film was laminated to form a laminate having a thickness of 1000 mu m. The laminate was cured by heating at 130 占 폚 for 1 hour and then at 175 占 폚 for 5 hours, and then a measurement sample having a length of 10 mm and a width of 30 mm was cut out from the cured product. The storage elastic modulus and the loss elastic modulus at -50 deg. C to 300 deg. C were measured for the measurement sample using a solid viscoelasticity measuring device (RSAII, manufactured by Rheometric Scientific Co., Ltd.). The measurement conditions were a frequency of 1 Hz and a temperature raising rate of 10 ° C / min. Further, the glass transition point was obtained by calculating the value of tan? (E "(loss elastic modulus) / E '(storage elastic modulus)).

(Reliability (Humidity Reflowability))

The die bonding film was attached to a 5 mm square semiconductor chip under the condition of a temperature of 40 캜, and then the semiconductor chip was bonded to the lead frame MF-202 via the die bonding film. The bonding conditions were a temperature of 120 ° C, a pressure of 0.1 MPa, and a time of 1 second. Next, the lead frame to which the semiconductor chip was bonded was heat-treated in a drier at 130 DEG C for 1 hour in nitrogen. And then packed with a sealing resin (GE-7470L-Q, manufactured by Hitachi Chemical Co., Ltd.) to obtain a semiconductor package. The sealing conditions were a heating temperature of 175 DEG C for 90 seconds. Thereafter, the semiconductor package was placed in an IR reflow furnace where moisture absorption was carried out under the conditions of 85 캜, 60% Rh and 168 hours, and further maintained at 260 캜 or higher for 10 seconds. Thereafter, the semiconductor package was cut with a glass cutter, and its cross-section was observed by an ultrasonic microscope to check whether or not there was separation at the boundary between the die bonding film and the lead frame. The confirmation was made with respect to eight semiconductor chips, and the case where the semiconductor chip with peeling was zero was evaluated as &amp; cir &amp;

(Measurement of average particle diameter of filler)

The die bonding film was placed in a crucible and was heat treated at 700 占 폚 for 2 hours in an atmospheric atmosphere to give a film. The obtained ash was dispersed in pure water and ultrasonicated for 10 minutes, and the average particle size was determined using a laser diffraction scattering particle size distribution analyzer (Beckman Coulter, "LS 13 320"; wet method). On the other hand, since the composition of the die-bonding film is an organic component other than the filler, substantially all the organic components disappear by the above heat treatment, and the obtained ash is regarded as a filler and the measurement is performed.

Figure pat00004

&Lt; Embodiment 4 of the present invention &gt;

Hereinafter, a preferred embodiment of the fourth aspect of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in this embodiment are not intended to limit the gist of the fourth aspect of the present invention to them unless otherwise specified. On the other hand, "parts" means "parts by weight".

(Example 1)

&Lt; Production of thermosetting die bonding film >

The following components (a) to (e) were dissolved in MEK (methyl ethyl ketone), and the concentration was adjusted so that the viscosity became 150 mPa 占 퐏 at room temperature to obtain an adhesive composition solution.

(a) An epoxy resin (product name: JER827 (bisphenol A type epoxy resin), manufactured by Mitsubishi Chemical Corporation), liquid phase (softening point is 25 DEG C or less) at room temperature)

8.6 part

(b) phenol resin (phenol resin having biphenyl aralkyl skeleton, MEH-7851SS, product name: MEHWA HASUNG, softening point 67 DEG C, hydroxyl group equivalent 203 g / eq.)

10.6 part

(c) Acrylic copolymer (product name: TAYASA RESIN SG-70L, manufactured by Nagase Chemtex Co., Ltd.)

chapter 1

(d) a curing accelerating catalyst (product name: 2PHZ-PW, manufactured by Shikoku Chemical Co., Ltd., 2-phenyl-4,5-dihydroxymethylimidazole)

0.2 part

(e) spherical alumina filler A: DAW-03 (spherical alumina filler, average particle diameter: 3 탆, specific surface area: 0.4 m 2 / g, thermal conductivity: 36 W / m 揃 K) manufactured by Denki Kagaku Kogyo Co.,

80 parts

On the other hand, the spherical alumina filler A was surface-treated in advance. The surface treatment was carried out by a dry method and treated with a silane coupling agent in an amount represented by the following formula (throughput of the silane coupling agent). The silane coupling agent was KBM503 from Shin-Etsu Chemical.

(M 2 / g) of silane coupling agent / (amount of silane coupling agent treated) = (weight of alumina filler g × specific surface area of alumina filler m 2 / g)

(M 2 / g) of the silane coupling agent = 6.02 × 10 23 × 13 × 10 -20 / molecular weight of the silane coupling agent

This adhesive composition solution was coated on a releasing film (first separator) made of a polyethylene terephthalate film having a thickness of 50 占 퐉 which had been subjected to a silicon release treatment to form a coating film, followed by drying at a drying temperature of 130 占 폚 and a drying time of 2 minutes . Thereafter, a mold releasing film (second separator) composed of a polyethylene terephthalate film having a thickness of 50 占 퐉 and subjected to a silicon release treatment was superposed thereon and the coating film was peeled off at a temperature of 65 占 폚 under a pressure of 0.4 Pa at a rate of 10 m / And held by the separator and the second separator. Thus, a die bonding film A having a thickness of 30 mu m was produced.

(Example 2)

&Lt; Production of thermosetting die bonding film >

The following components (a) to (e) were dissolved in MEK (methyl ethyl ketone), and the concentration was adjusted so that the viscosity became 150 mPa 占 퐏 at room temperature to obtain an adhesive composition solution.

(a) An epoxy resin (product name: JER827 (bisphenol A type epoxy resin), manufactured by Mitsubishi Chemical Corporation), liquid phase (softening point is 25 DEG C or less) at room temperature)

7.3 part

(b) phenol resin (phenol resin having biphenyl aralkyl skeleton, MEH-7851SS, product name: MEHWA HASUNG, softening point 67 DEG C, hydroxyl group equivalent 203 g / eq.)

8.9 part

(c) Acrylic copolymer (product name: TAYASA RESIN SG-70L, manufactured by Nagase Chemtex Co., Ltd.)

Part 4

(d) a curing accelerating catalyst (product name: 2PHZ-PW, manufactured by Shikoku Chemical Co., Ltd., 2-phenyl-4,5-dihydroxymethylimidazole)

0.2 part

(e) spherical alumina filler A: DAW-03 (spherical alumina filler, average particle diameter: 3 탆, specific surface area: 0.4 m 2 / g, thermal conductivity: 36 W / m 揃 K) manufactured by Denki Kagaku Kogyo Co.,

80 parts

On the other hand, the spherical alumina filler A was surface-treated in advance. The surface treatment was carried out by a dry method and treated with a silane coupling agent in an amount represented by the following formula (throughput of the silane coupling agent). The silane coupling agent was KBM503 from Shin-Etsu Chemical.

(M 2 / g) of silane coupling agent / (amount of silane coupling agent treated) = (weight of alumina filler g × specific surface area of alumina filler m 2 / g)

(M 2 / g) of the silane coupling agent = 6.02 × 10 23 × 13 × 10 -20 / molecular weight of the silane coupling agent

This adhesive composition solution was coated on a releasing film (first separator) made of a polyethylene terephthalate film having a thickness of 50 占 퐉 which had been subjected to a silicon release treatment to form a coating film, followed by drying at a drying temperature of 130 占 폚 and a drying time of 2 minutes . Thereafter, a mold releasing film (second separator) composed of a polyethylene terephthalate film having a thickness of 50 占 퐉 and subjected to a silicon release treatment was superposed thereon and the coating film was peeled off at a temperature of 65 占 폚 under a pressure of 0.4 Pa at a rate of 10 m / And held by the separator and the second separator. Thus, a die bonding film B having a thickness of 30 mu m was produced.

(Comparative Example 1)

&Lt; Production of thermosetting die bonding film >

The following components (a) to (e) were dissolved in MEK (methyl ethyl ketone), and the concentration was adjusted so that the viscosity became 150 mPa 占 퐏 at room temperature to obtain an adhesive composition solution.

(a) An epoxy resin (product name: JER827 (bisphenol A type epoxy resin), manufactured by Mitsubishi Chemical Corporation), liquid phase (softening point is 25 DEG C or less) at room temperature)

6.4 part

(b) phenol resin (phenol resin having biphenyl aralkyl skeleton, MEH-7851SS, product name: MEHWA HASUNG, softening point 67 DEG C, hydroxyl group equivalent 203 g / eq.)

7.8 part

(c) Acrylic copolymer (product name: TAYASA RESIN SG-70L, manufactured by Nagase Chemtex Co., Ltd.)

6.0 parts

(d) a curing accelerating catalyst (product name: 2PHZ-PW, manufactured by Shikoku Chemical Co., Ltd., 2-phenyl-4,5-dihydroxymethylimidazole)

0.2 part

(e) spherical alumina filler C (ASFP-20 (spherical alumina filler, average particle diameter: 0.3 탆, specific surface area: 12.5 m 2 / g, thermal conductivity: 36 W / m 揃 K) manufactured by Denki Kagaku Kogyo Co.,

80 parts

On the other hand, the spherical alumina filler C was subjected to surface treatment in advance. The surface treatment was carried out by a dry method and treated with a silane coupling agent in an amount represented by the following formula (throughput of the silane coupling agent). The silane coupling agent was KBM503 from Shin-Etsu Chemical.

(M 2 / g) of silane coupling agent / (amount of silane coupling agent treated) = (weight of alumina filler g × specific surface area of alumina filler m 2 / g)

(M 2 / g) of the silane coupling agent = 6.02 × 10 23 × 13 × 10 -20 / molecular weight of the silane coupling agent

This adhesive composition solution was coated on a releasing film (first separator) made of a polyethylene terephthalate film having a thickness of 50 占 퐉 which had been subjected to a silicon release treatment to form a coating film, followed by drying at a drying temperature of 130 占 폚 and a drying time of 2 minutes . Thereafter, a mold releasing film (second separator) composed of a polyethylene terephthalate film having a thickness of 50 占 퐉 and subjected to a silicon release treatment was superposed thereon and the coating film was peeled off at a temperature of 65 占 폚 under a pressure of 0.4 Pa at a rate of 10 m / And held by the separator and the second separator. As a result, a die bonding film C having a thickness of 30 mu m was produced.

(Comparative Example 2)

&Lt; Production of thermosetting die bonding film >

The following components (a) to (e) were dissolved in MEK (methyl ethyl ketone), and the concentration was adjusted so that the viscosity became 150 mPa 占 퐏 at room temperature to obtain an adhesive composition solution.

(a) An epoxy resin (product name: JER827 (bisphenol A type epoxy resin), manufactured by Mitsubishi Chemical Corporation), liquid phase (softening point is 25 DEG C or less) at room temperature)

8.6 part

(b) phenol resin (phenol resin having biphenyl aralkyl skeleton, MEH-7851SS, product name: MEHWA HASUNG, softening point 67 DEG C, hydroxyl group equivalent 203 g / eq.)

10.6 part

(c) Acrylic copolymer (product name: TAYASA RESIN SG-70L, manufactured by Nagase Chemtex Co., Ltd.)

chapter 1

(d) a curing accelerating catalyst (product name: 2PHZ-PW, manufactured by Shikoku Chemical Co., Ltd., 2-phenyl-4,5-dihydroxymethylimidazole)

0.2 part

(e) Spherical alumina filler B: DAW-03 (spherical alumina filler, average particle size: 3 탆, specific surface area: 0.4 m 2 / g, thermal conductivity: 36 W / m 揃 K, manufactured by Denki Kagaku Kogyo Co., )

80 parts

This adhesive composition solution was coated on a releasing film (first separator) made of a polyethylene terephthalate film having a thickness of 50 占 퐉 which had been subjected to a silicon release treatment to form a coating film, followed by drying at a drying temperature of 130 占 폚 and a drying time of 2 minutes . Thereafter, a mold releasing film (second separator) composed of a polyethylene terephthalate film having a thickness of 50 占 퐉 and subjected to a silicon release treatment was superposed thereon and the coating film was peeled off at a temperature of 65 占 폚 under a pressure of 0.4 Pa at a rate of 10 m / And held by the separator and the second separator. Thus, a die bonding film D having a thickness of 30 mu m was produced.

On the other hand, the average particle diameter of the whole filler and the specific surface area of the whole filler in the die-bonding film according to the examples and the comparative examples are as shown in Table 5. [ The ratio of the filling amount of the filler to the entire die bonding film, the ratio of the thermosetting resin in the resin component (in the total amount of the thermosetting resin and the thermoplastic resin) and the ratio of the thermoplastic resin in the resin component (in the total amount of the thermosetting resin and the thermoplastic resin) The results are shown in Table 5.

(Measurement of melt viscosity at 80 캜)

The melt viscosity of the die-bonding films A to D at 80 占 폚 before thermosetting was measured. The measurement was performed by a parallel plate method using a rheometer (RS-1 manufactured by HAAKE). That is, 0.1 g of each of the die bonding films A to D was sampled, and this sample was put into a plate preheated to 80 ° C in advance. The melt viscosity was set to a value after 300 seconds from the start of measurement. The shear rate was 5 (1 / sec) and the gap between the plates was 0.1 mm. The results are shown in Table 5 below.

(Measurement of thermal conductivity)

The thermal conductivity of the die bonding films A to D after the thermal curing was measured. The thermal conductivity was obtained from the following equation. The results are shown in Table 5. On the other hand, the thermal conductivity after heat curing is the thermal conductivity after heating at 130 占 폚 for 1 hour and then heating at 175 占 폚 for 5 hours.

(Thermal conductivity) = (thermal diffusion coefficient) x (specific heat) x (specific gravity)

<Thermal Diffusion Coefficient>

The die bonding film was laminated to a thickness of 1 mm, and then punched into a shape of 1 cm ?. Then, the mixture was heated at 130 占 폚 for 1 hour and then at 175 占 폚 for 5 hours. Using this sample, the thermal diffusivity was measured using a laser flash thermometer (TC-9000, manufactured by ULVAC Co., Ltd.).

<Specific heat>

DSC (TA Instrument, Q-2000) according to the measuring method according to the standard of JIS-7123.

<Specific gravity>

And measured by Archimedes method using an electronic balance (AEL-200, manufactured by Shimadzu Corporation).

(Measurement of surface roughness Ra)

The die bonding films A to D were bonded and fixed to a mirror wafer which had been smoothed, and the surface roughness Ra was measured using a surface roughness meter (product name: "Surf Test SJ-301" manufactured by Mitsutoyo Co., Ltd.). The results are shown in Table 5.

(Evaluation of intrusion of water during dicing)

The die bonding films A to D were bonded to a dicing tape (P-2130, manufactured by Nitto Denko) using a laminator at 40 占 폚. Further, an 8 inch wafer of 50 占 퐉 was laminated on the adhesive film at 65 占 폚, 10 mm / sec. Thereafter, dicing was performed by bonding to an 8-inch dicing ring (DTF2-8-1, made by DISCO Co., Ltd.). ZH203O-SE27HEDD (manufactured by DISCO) as Z1 dicing blade and NBC-ZH203O-SE27HEFF (manufactured by DISCO) as Z2 blade using a dicing machine (DFD6361, manufactured by DISCO) . The height of the blade was set to a height at which Z1 was cut in half on the wafer, and a height at which Z2 was cut in 20 mu m on the dicing tape. The number of revolutions of the dicing blade was 40,000 rpm, the dicing speed was 30 mm / sec, the quantity was 1 L / min, and the step cutting method was used. In the water intrusion, a sample after dicing is observed from the dicing tape side to check whether water is contained between the die bonding film and the dicing tape, and when water is intruded or between the die bonding film and the dicing tape The case where peeling occurred was judged as a water intrusion. The number of dicing was 10 per one embodiment, and "1" indicates that the water intrusion occurred, and "0" indicates that the water intrusion did not occur. The results are shown in Table 5.

Figure pat00005

&Lt; Embodiment 5 of the present invention &gt;

Hereinafter, a preferred embodiment of the fifth invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in this embodiment are not intended to limit the gist of the fifth aspect of the present invention to them, unless otherwise specified. On the other hand, "parts" means "parts by weight".

(Example 1)

&Lt; Production of thermosetting die bonding film >

The following composition (a) to (f) was dissolved in MEK (methyl ethyl ketone) and the concentration was adjusted so that the viscosity became 100 mPa 占 퐏 at room temperature to obtain an adhesive composition solution.

(a) Epoxy resin (product name: JER827 (bisphenol A type epoxy resin), manufactured by Mitsubishi Chemical Corporation), liquid phase (softening point is 25 占 폚 or less)

9.5 parts

(b) phenol resin (phenol resin having biphenyl aralkyl skeleton, MEH-7851SS, product name: MEHWA HASUNG, softening point 67 DEG C, hydroxyl group equivalent 203 g / eq.)

9.5 parts

(c) acrylic copolymer (trade name: TAYASA RESIN SG-P3, manufactured by Nagase ChemteX Corporation, weight average molecular weight: 8,500, glass transition temperature: 12 DEG C)

chapter 1

(d) a curing accelerating catalyst (product name: TPP-MK, tetraphenylphosphonium tetra-p-triborate) manufactured by Hokko Chemical Co.,

0.2 part

(e) spherical alumina filler A (product name: DAW-05 manufactured by Denki Kagaku Kogyo Co., Ltd., average particle diameter: 5.1 탆, specific surface area: 0.5 m 2 / g)

60 parts

(f) spherical alumina filler B (Admatech Co., Ltd., product name: AO802, average particle size: 0.7 m, specific surface area: 7.5 m 2 / g)

20 copies

On the other hand, spherical alumina filler A and spherical alumina filler B were subjected to surface treatment in advance. The surface treatment was carried out by a dry method and treated with a silane coupling agent in an amount represented by the following formula (throughput of the silane coupling agent). The silane coupling agent was KBM503 from Shin-Etsu Chemical.

(M 2 / g) of silane coupling agent / (amount of silane coupling agent treated) = (weight of alumina filler g × specific surface area of alumina filler m 2 / g)

(M 2 / g) of the silane coupling agent = 6.02 × 10 23 × 13 × 10 -20 / molecular weight of the silane coupling agent

This adhesive composition solution was coated on a releasing treatment film (release liner) comprising a polyethylene terephthalate film having a thickness of 50 占 퐉 which was subjected to silicone release treatment, and then dried at 130 占 폚 for 2 minutes. Thus, a die bonding film A having a thickness of 25 mu m was produced.

(Example 2)

&Lt; Production of thermosetting die bonding film >

The following composition (a) to (f) was dissolved in MEK (methyl ethyl ketone) and the concentration was adjusted so that the viscosity became 100 mPa 占 퐏 at room temperature to obtain an adhesive composition solution.

(a) Epoxy resin (product name: JER827 (bisphenol A type epoxy resin), manufactured by Mitsubishi Chemical Corporation), liquid phase (softening point is 25 占 폚 or less)

6.5 parts

(b) phenol resin (phenol resin having biphenyl aralkyl skeleton, MEH-7851SS, product name: MEHWA HASUNG, softening point 67 DEG C, hydroxyl group equivalent 203 g / eq.)

Part 7

(c) acrylic copolymer (trade name: TAYASA RESIN SG-P3, manufactured by Nagase ChemteX Corporation, weight average molecular weight: 8,500, glass transition temperature: 12 DEG C)

1.5 parts

(d) a curing accelerating catalyst (product name: TPP-MK, tetraphenylphosphonium tetra-p-triborate) manufactured by Hokko Chemical Co.,

0.15 part

(e) spherical alumina filler A (product name: DAW-05 manufactured by Denki Kagaku Kogyo Co., Ltd., average particle diameter: 5.1 탆, specific surface area: 0.5 m 2 / g)

60 parts

(f) spherical alumina filler B (Admatech Co., Ltd., product name: AO802, average particle size: 0.7 m, specific surface area: 7.5 m 2 / g)

25

On the other hand, spherical alumina filler A and spherical alumina filler B were subjected to surface treatment in advance. The surface treatment was carried out by a dry method and treated with a silane coupling agent in an amount represented by the following formula (throughput of the silane coupling agent). The silane coupling agent was KBM503 from Shin-Etsu Chemical.

(M 2 / g) of silane coupling agent / (amount of silane coupling agent treated) = (weight of alumina filler g × specific surface area of alumina filler m 2 / g)

(M 2 / g) of the silane coupling agent = 6.02 × 10 23 × 13 × 10 -20 / molecular weight of the silane coupling agent

This adhesive composition solution was coated on a releasing treatment film (release liner) comprising a polyethylene terephthalate film having a thickness of 50 占 퐉 which was subjected to silicone release treatment, and then dried at 130 占 폚 for 2 minutes. Thus, a die bonding film B having a thickness of 25 mu m was produced.

 (Example 3)

&Lt; Production of thermosetting die bonding film >

The following composition (a) to (f) was dissolved in MEK (methyl ethyl ketone) and the concentration was adjusted so that the viscosity became 100 mPa 占 퐏 at room temperature to obtain an adhesive composition solution.

(a) Epoxy resin (product name: JER827 (bisphenol A type epoxy resin), manufactured by Mitsubishi Chemical Corporation), liquid phase (softening point is 25 占 폚 or less)

4.2 part

(b) phenol resin (phenol resin having biphenyl aralkyl skeleton, MEH-7851SS, product name: MEHWA HASUNG, softening point 67 DEG C, hydroxyl group equivalent 203 g / eq.)

4.3 part

(c) acrylic copolymer (trade name: TAYASA RESIN SG-P3, manufactured by Nagase ChemteX Corporation, weight average molecular weight: 8,500, glass transition temperature: 12 DEG C)

1.5 parts

(d) a curing accelerating catalyst (product name: TPP-MK, tetraphenylphosphonium tetra-p-triborate) manufactured by Hokko Chemical Co.,

0.15 part

(e) spherical alumina filler A (product name: DAW-05 manufactured by Denki Kagaku Kogyo Co., Ltd., average particle diameter: 5.1 탆, specific surface area: 0.5 m 2 / g)

68

(f) spherical alumina filler B (Admatech Co., Ltd., product name: AO802, average particle size: 0.7 m, specific surface area: 7.5 m 2 / g)

Part 22

On the other hand, spherical alumina filler A and spherical alumina filler B were subjected to surface treatment in advance. The surface treatment was carried out by a dry method and treated with a silane coupling agent in an amount represented by the following formula (throughput of the silane coupling agent). The silane coupling agent was KBM503 from Shin-Etsu Chemical.

(M 2 / g) of silane coupling agent / (amount of silane coupling agent treated) = (weight of alumina filler g × specific surface area of alumina filler m 2 / g)

(M 2 / g) of the silane coupling agent = 6.02 × 10 23 × 13 × 10 -20 / molecular weight of the silane coupling agent

This adhesive composition solution was coated on a releasing treatment film (release liner) comprising a polyethylene terephthalate film having a thickness of 50 占 퐉 which was subjected to silicone release treatment, and then dried at 130 占 폚 for 2 minutes. Thus, a die bonding film C having a thickness of 25 mu m was produced.

(Comparative Example 1)

&Lt; Production of thermosetting die bonding film >

The following composition (a) to (e) was dissolved in MEK (methyl ethyl ketone) and the concentration was adjusted to have a viscosity of 100 mPa 占 퐏 at room temperature to obtain an adhesive composition solution.

(a) an epoxy resin (product name: JER827 (bisphenol A type epoxy resin) manufactured by Mitsubishi Chemical Corporation), a liquid phase (softening point is 25 占 폚 or less)

Part 8

(b) phenol resin (phenol resin having biphenyl aralkyl skeleton, MEH-7851SS, product name: MEHWA HASUNG, softening point 67 DEG C, hydroxyl group equivalent 203 g / eq.)

Part 8

(c) acrylic copolymer (trade name: TAYASA RESIN SG-P3, manufactured by Nagase ChemteX Corporation, weight average molecular weight: 8,500, glass transition temperature: 12 DEG C)

Part 4

(d) a curing accelerating catalyst (product name: TPP-MK, tetraphenylphosphonium tetra-p-triborate) manufactured by Hokko Chemical Co.,

0.2 part

(e) spherical alumina filler B (Admatech Co., Ltd., product name: AO802, average particle diameter: 0.7 m, specific surface area: 7.5 m 2 / g)

80 parts

On the other hand, spherical alumina filler A and spherical alumina filler B were subjected to surface treatment in advance. The surface treatment was carried out by a dry method and treated with a silane coupling agent in an amount represented by the following formula (throughput of the silane coupling agent). The silane coupling agent was KBM503 from Shin-Etsu Chemical.

(M 2 / g) of silane coupling agent / (amount of silane coupling agent treated) = (weight of alumina filler g × specific surface area of alumina filler m 2 / g)

(M 2 / g) of the silane coupling agent = 6.02 × 10 23 × 13 × 10 -20 / molecular weight of the silane coupling agent

This adhesive composition solution was coated on a releasing treatment film (release liner) comprising a polyethylene terephthalate film having a thickness of 50 占 퐉 which was subjected to silicone release treatment, and then dried at 130 占 폚 for 2 minutes. Thus, a die bonding film D having a thickness of 25 mu m was produced.

On the other hand, the average particle sizes of the fillers (spherical alumina filler A and spherical alumina filler B) and the specific surface area of the whole filler in the die-bonding films according to the examples and the comparative examples are as shown in Table 6. The ratio of the filling amount of the filler to the entire die bonding film, the ratio of the thermosetting resin in the resin component (in the total amount of the thermosetting resin and the thermoplastic resin) and the ratio of the thermoplastic resin in the resin component (in the total amount of the thermosetting resin and the thermoplastic resin) The results are shown in Table 6.

(Measurement of melt viscosity at 80 캜)

The melt viscosity of the die-bonding films A to D at 80 占 폚 before thermosetting was measured. The measurement was performed by a parallel plate method using a rheometer (RS-1 manufactured by HAAKE). That is, 0.1 g of each of the die bonding films A to D was sampled, and this sample was put into a plate preheated to 80 ° C in advance. The melt viscosity was set to a value after 300 seconds from the start of measurement. The shear rate was 5 (1 / sec) and the gap between the plates was 0.1 mm. The results are shown in Table 6 below.

(Measurement of thermal conductivity)

The thermal conductivity of the die bonding films A to C after the thermal curing was measured. The thermal conductivity was obtained from the following equation. The results are shown in Table 6. On the other hand, the thermal conductivity after heat curing is the thermal conductivity after heating at 130 占 폚 for 1 hour and then heating at 175 占 폚 for 5 hours.

(Thermal conductivity) = (thermal diffusion coefficient) x (specific heat) x (specific gravity)

<Thermal Diffusion Coefficient>

The die bonding film was laminated to a thickness of 1 mm, and then punched into a shape of 1 cm ?. Then, the mixture was heated at 130 占 폚 for 1 hour and then at 175 占 폚 for 5 hours. Using this sample, the thermal diffusivity was measured using a laser flash thermometer (TC-9000, manufactured by ULVAC Co., Ltd.).

<Specific heat>

DSC (TA Instrument, Q-2000) according to the measuring method according to the standard of JIS-7123.

<Specific gravity>

And measured by Archimedes method using an electronic balance (AEL-200, manufactured by Shimadzu Corporation).

(Evaluation of mounting property)

The mounting performance was evaluated by using a die bonding film bonded to a dicing film.

<Preparation of Dicing Tape Adhesive>

4 parts of 2-ethylhexyl acrylate, 3 parts of acrylate, 100 parts of 2-hydroxyethyl acrylate, 0.2 part of benzoyl peroxide and 20 parts of acetic acid were placed in a reaction vessel equipped with a stirrer, a condenser, a nitrogen inlet tube, And polymerization was carried out in a nitrogen stream at 61 ° C for 6 hours to obtain an acryl-based polymer A. With respect to the acrylic polymer A, the weight average molecular weight Mw was 300,000, the glass transition temperature (Tg) was -16 DEG C, the iodine number was 2, and the hydroxyl group (mgKOH / g) was 30.

24.1 parts of 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko K.K., hereinafter also referred to as &quot; MOI &quot;) was added to the resulting acrylic polymer A and subjected to an addition reaction treatment at 50 DEG C for 48 hours in an air stream, Polymer A 'was obtained. Next, 3 parts of a polyisocyanate compound (trade name: "Colonate L", manufactured by Nippon Polyurethane Co., Ltd.) and 100 parts of a photopolymerization initiator (trade name: Irgacure 651, manufactured by Chiba Specialty Co., Chemicals, Inc.) was added and dissolved in toluene to obtain a pressure-sensitive adhesive composition solution having a concentration of 20% by weight. A polyethylene terephthalate film (PET film) having a thickness of 50 占 퐉 was prepared as a base material, and a pressure sensitive adhesive layer having a thickness of 30 占 퐉 was formed thereon by applying a solution of the obtained pressure sensitive adhesive composition and drying the solution.

The dicing film and the die bonding film were bonded at a room temperature of 0.15 MPa and 10 mm / sec to produce a die bonding film with a dicing sheet.

The mounting performance was evaluated using a wafer bonding apparatus (MA-3000 II) manufactured by Nitto Seiki KK. Specifically, the die bonding film with dicing sheet obtained above was bonded to a 12-inch wafer polished to 50 탆. The bonding conditions were a bonding speed of 15 mm / sec, a bonding temperature of 80 ° C, and a bonding pressure of 0.15 MPa.

When the wafer is cracked, when bubbles are interposed at the bonding portion between the die bonding film and the wafer, color irregularity (partially whitened) due to poor adhesion between the die bonding film and the wafer Blurred shape, etc.) was generated as &quot; x &quot;. The results are shown in Table 6.

Figure pat00006

1: substrate
2: Pressure-sensitive adhesive layer
3, 3 ': die bonding film (thermosetting die bonding film)
4: Semiconductor wafer
5: Semiconductor chip
6: adherend
7: Bonding wire
8: sealing resin
10, 12: die bonding film with dicing sheet
11: Dicing sheet

Claims (10)

Thermally conductive particles,
The thermally conductive particles are surface-treated with a silane coupling agent,
The content of the thermally conductive particles is at least 75% by weight based on the entire thermosetting die-bonding film,
A thermosetting die bonding film having a thermal conductivity after heat curing of 1 W / mK or more. The method according to claim 1,
Wherein the thermally conductive particles have a thermal conductivity of 12 W / mK or more. The method according to claim 1,
Wherein the silane coupling agent comprises a hydrolyzable group,
Wherein the hydrolyzable group is a methoxy group and / or an ethoxy group. The method according to claim 1,
Wherein the silane coupling agent comprises an organic functional group,
Wherein the organic functional group comprises at least one member selected from the group consisting of an acrylic group, a methacrylic group, an epoxy group, and a phenylamino group. The method according to claim 1,
Wherein the silane coupling agent does not contain a primary amino group, a mercapto group and an isocyanate group. The method according to claim 1,
A thermosetting die-bonding film having a melt viscosity at 130 占 폚 of 300 Pa 占 퐏 or less. The method according to claim 1,
A thermosetting die-bonding film having a thickness of 50 탆 or less. A process for producing a thermosetting die-bonding film, comprising the steps of: preparing the thermosetting die-bonding film according to any one of claims 1 to 7;
Bonding the semiconductor chip to an adherend via the thermosetting die-bonding film. A die-bonding film with a dicing sheet, wherein the thermosetting die-bonding film according to any one of claims 1 to 7 is laminated on a dicing sheet on which a pressure-sensitive adhesive layer is laminated. A step of preparing the die bonding film with a dicing sheet according to claim 9;
Bonding the thermosetting die bonding film of the die bonding film with the dicing sheet to the back surface of the semiconductor wafer,
Dicing the semiconductor wafer together with the thermosetting die bonding film to form a semiconductor chip on the chip;
A step of picking up the semiconductor chip together with the thermosetting die bonding film from the die bonding film with the dicing sheet,
Bonding the semiconductor chip to an adherend via the thermosetting die-bonding film.
KR1020140067866A 2013-06-04 2014-06-03 Thermosetting die-bonding film, die-bonding film with dicing sheet, and process for producing semiconductor device KR20140142676A (en)

Applications Claiming Priority (14)

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JP2013118065A JP6366228B2 (en) 2013-06-04 2013-06-04 Adhesive sheet and dicing die bonding film
JPJP-P-2013-118065 2013-06-04
JPJP-P-2013-130272 2013-06-21
JP2013130272A JP2015005636A (en) 2013-06-21 2013-06-21 Dicing/die-bonding film
JP2013241297A JP2015103577A (en) 2013-11-21 2013-11-21 Thermosetting die bond film, die bond film with dicing sheet and method for manufacturing semiconductor device
JPJP-P-2013-241306 2013-11-21
JP2013241306A JP6505362B2 (en) 2013-11-21 2013-11-21 Thermosetting die bonding film, die bonding film with dicing sheet, method of manufacturing thermosetting die bonding film, and method of manufacturing semiconductor device
JP2013241309A JP2015103582A (en) 2013-11-21 2013-11-21 Method for manufacturing semiconductor device
JP2013241294A JP2015103576A (en) 2013-11-21 2013-11-21 Thermosetting die bond film, die bond film with dicing sheet and method for manufacturing semiconductor device
JPJP-P-2013-241297 2013-11-21
JP2013241302A JP2015103579A (en) 2013-11-21 2013-11-21 Thermosetting die bond film, die bond film with dicing sheet and method for manufacturing semiconductor device
JPJP-P-2013-241309 2013-11-21
JPJP-P-2013-241294 2013-11-21
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KR20180121581A (en) * 2016-06-10 2018-11-07 히타치가세이가부시끼가이샤 Adhesive film and dicing die-bonding all-in-one film

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JP2016219619A (en) * 2015-05-21 2016-12-22 日東電工株式会社 Adhesive sheet, dicing tape-integrated adhesive sheet, film, manufacturing method of semiconductor device, and semiconductor device
CN111630642B (en) * 2018-01-30 2023-05-26 株式会社力森诺科 Method for manufacturing semiconductor device and film-like adhesive
KR102563869B1 (en) * 2018-06-05 2023-08-04 (주)이녹스첨단소재 Anti- electrostatic discharge die attach film, Manufacturing method thereof and Process of dicing wafer
TW202128938A (en) * 2019-11-22 2021-08-01 日商琳得科股份有限公司 Film-like firing material, film-like firing material with support sheet, multilayer body, and method for producing device
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JP5367656B2 (en) * 2010-07-29 2013-12-11 日東電工株式会社 Flip chip type film for semiconductor back surface and use thereof

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KR20180121581A (en) * 2016-06-10 2018-11-07 히타치가세이가부시끼가이샤 Adhesive film and dicing die-bonding all-in-one film
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