JP2012207222A - Composition for high thermal conductivity film-like adhesive, high thermal conductivity film-like adhesive, and semiconductor package and method for manufacturing the same using the adhesive - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a composition for a high thermal conductivity film-like adhesive capable of giving a high thermal conductivity film-like adhesive which is excellent in adhesion to an adherend, ensures a sufficiently small wear rate of a processing blade, and exhibits excellent thermal conductivity after curing; a high thermal conductivity film-like adhesive; and a semiconductor package and a method for manufacturing the same using the adhesive.SOLUTION: The composition for a high thermal conductivity film-like adhesive comprises an epoxy resin (A), an epoxy resin curing agent (B), an inorganic filler (C) and a phenoxy resin (D). The inorganic filler (C) has (i) an average particle size of 0.1-5.0 μm, (ii) a Mohs hardness of 1-8, and (iii) a thermal conductivity of ≥30 W/(m K), and the content of the inorganic filler (C) is 30-70 vol.%.

Description

  The present invention relates to a composition for a highly heat conductive film adhesive, a highly heat conductive film adhesive, a semiconductor package using the same, and a method for producing the same.

  In recent years, as electronic devices have been reduced in size and functionality, the functions of semiconductor packages mounted therein have also been improved, and the processing speed of semiconductor elements inside the semiconductor package has been increased. . However, as the processing speed increases, the surface of the semiconductor element is likely to generate heat. For example, the generated heat reduces the operation speed of the semiconductor element or causes malfunction of the electronic device. was there.

  In order to eliminate such adverse effects due to heat, the constituent members of the semiconductor package are required to have thermal conductivity that releases the generated heat to the outside of the package. In addition, a so-called die attach material for bonding between a semiconductor element and a wiring board or between semiconductor elements is required to have high thermal conductivity and sufficient insulation and adhesion reliability.

  Furthermore, as such a die attach material, in the past, it was often used in the form of a paste, but due to the high functionality of the semiconductor package, high density mounting inside the package is required, In order to prevent contamination of other members such as semiconductor elements and wire pads due to resin flow and resin rising, the use in the form of a film (die attach film) has been increasing in recent years.

  However, when bonding the die attach film to the back surface of the wafer, or in the so-called die attach process for mounting the semiconductor element provided with the die attach film, the wafer back surface, particularly the surface of the wiring board on which the semiconductor element is mounted, is not necessarily provided. Since it is not a smooth surface state, when the viscosity of the die attach film is high at the time of pasting or mounting, the adhesion between the die attach film and the adherend may be reduced and air may be involved in the interface between the two. is there. The entrained air has a problem that it not only reduces the adhesive strength of the die attach film after heat curing but also causes package cracks.

  Conventionally, as a material that can be used as a so-called die attach film, for example, Patent Document 1 describes a heat conductive filler made of aluminum hydroxide and silicon dioxide and a sheet of a heat conductive member made of a silicon-based resin. . However, although the sheet of the heat conducting member described in Patent Document 1 has a certain degree of high heat conductivity, there is still a problem with the adhesion to the adherend.

  Moreover, in patent document 2, the adhesive sheet which consists of an epoxy resin containing inorganic fillers, such as a silicon oxide, is described. However, although the adhesive sheet described in Patent Document 2 has high thermal conductivity, insulation, and a certain degree of tackiness, it still has insufficient adhesion to the adherend.

  Furthermore, Patent Document 3 describes a film adhesive made of a resin containing an epoxy resin, a curing agent, a curing accelerator, and a specific alumina powder. However, although the film adhesive described in Patent Document 3 has high thermal conductivity and insulating properties, it still has insufficient adhesion to an adherend.

JP 2009-286809 A JP 2008-280436 A JP 2007-246861 A

  In the manufacturing process of the semiconductor package, it is also necessary that the wear rate of the processing blade by the die attach film is small in a so-called dicing process in which the die attach film and the wafer on which the semiconductor element is formed are cut simultaneously.

  However, if a thermally conductive inorganic filler such as aluminum hydroxide as described in Patent Documents 1 to 3 is used in order to improve the thermal conductivity of the die attach film, the processing blade of the die attach film is used. Although the wear rate is increased and a predetermined cutting can be performed for a while after the start of the cutting process (dicing process), the amount of die attach film gradually becomes insufficient, and the die attach film is fully cut as shown in FIG. The present inventors have found that a processing defect such as forming a portion that is not performed occurs.

  Further, in order to prevent this problem from occurring, if the frequency of blade replacement is increased, the productivity decreases, leading to an increase in cost. On the other hand, if a blade with a small amount of wear is used, chipping may occur on the wafer. The present inventors have found that there is a problem that the yield is lowered due to the occurrence of the above.

  The present invention has been made in view of the above-described problems of the prior art, has excellent adhesion to the adherend, has a sufficiently low wear rate of the processing blade, and exhibits excellent thermal conductivity after curing. It is possible to provide a composition for a high thermal conductive film adhesive, a high thermal conductive film adhesive, a semiconductor package using the same, and a method for manufacturing the same. Objective.

  As a result of intensive studies to achieve the above object, the inventors of the present invention have made the film-like adhesive have a melt viscosity at 80 ° C. of 10000 Pa · s or less so that it can be bonded to the adherend by thermocompression bonding. It has been found that excellent adhesion can be obtained, and further, a composition for a highly heat conductive film adhesive containing an epoxy resin, an epoxy resin curing agent, a phenoxy resin, and a specific inorganic filler having a specific content By using the present invention, it has been found that a highly heat-conductive film-like adhesive having the above-mentioned melting characteristics, having a sufficiently low wear rate of the processing blade, and exhibiting excellent heat conductivity after curing can be obtained. It came to complete.

That is, the composition for high thermal conductive film adhesive of the present invention is
It contains an epoxy resin (A), an epoxy resin curing agent (B), an inorganic filler (C), and a phenoxy resin (D), and the inorganic filler (C) includes the following (i) to (iii):
(I) The average particle size is 0.1 to 5.0 μm,
(Ii) Mohs hardness of 1-8,
(Iii) Thermal conductivity is 30 W / (m · K) or more,
Satisfy all the conditions of
Content of the said inorganic filler (C) is 30-70 volume%, It is characterized by the above-mentioned.

  In the composition for high thermal conductive film adhesive of the present invention, the epoxy resin (A) is represented by the following formula (1):

[In Formula (1), n shows the integer of 0-10. ]
It is preferable that it is a triphenylmethane type epoxy resin represented by these, and it is preferable that the said inorganic filler (C) is aluminum nitride.

  Moreover, the highly heat conductive film adhesive of this invention is obtained by heat-drying the said composition for high heat conductive film adhesives of the said invention, and thickness is 10-150 micrometers, It is characterized by the above-mentioned. The melt viscosity at 80 ° C. observed when heated at a rate of temperature increase from 20 ° C. to 10 ° C./min with a rheometer is 10000 Pa · s or less, and the thermal conductivity after thermosetting is 1. It is preferably 0 W / (m · K) or more.

Furthermore, the manufacturing method of the semiconductor package of the present invention includes:
A first step of providing an adhesive layer by thermocompression bonding of the high thermal conductive film adhesive of the present invention to the back surface of a wafer having a semiconductor circuit formed on the surface;
A second step of obtaining a semiconductor element including the wafer and the adhesive layer by dicing the wafer and the adhesive layer simultaneously after bonding the wafer and the dicing tape through the adhesive layer. When,
A third step of detaching the dicing tape from the adhesive layer and thermocompression bonding the semiconductor element and the wiring board through the adhesive layer;
A fourth step of thermosetting the high thermal conductive film adhesive;
The semiconductor package of the present invention is obtained by the method for manufacturing a semiconductor package of the present invention.

  The reason why the object is achieved by the configuration of the present invention is not necessarily clear, but the present inventors infer as follows. That is, in the present invention, by using a composition for a highly thermally conductive film adhesive containing an epoxy resin, an epoxy resin curing agent, a phenoxy resin, and a specific content of a specific inorganic filler, A highly thermally conductive film adhesive having a specific low melt viscosity in the temperature range is obtained. Therefore, for example, an adhesive sheet whose adhesiveness is improved by simply being in a semi-cured state (B stage state) as described in Patent Document 2, tensile strength as described in Patent Document 3, etc. Compared with the film-like adhesive whose adhesion is improved by improving the adhesiveness, the highly heat-conductive film-like adhesive of the present invention has a surface with unevenness by thermocompression bonding in the specific temperature range. The present inventors infer that it is possible to fill the interface with the body without any gaps, and thus better adhesion can be exhibited.

  Moreover, in this invention, the high heat conductivity obtained using the composition for high heat conductive film adhesives of this invention by containing the inorganic filler which has specific hardness and a particle size by specific content. The present inventors infer that the wear rate of the processing blade can be reduced in the adhesive film-like adhesive.

  According to the present invention, it is possible to obtain a highly thermally conductive film adhesive that has excellent adhesion to an adherend, a sufficiently low wear rate of a processing blade, and exhibits excellent thermal conductivity after curing. It is possible to provide a highly heat conductive film adhesive composition, a high heat conductive film adhesive, a semiconductor package using the same, and a method for manufacturing the same.

It is a photograph which shows the halftone image which displayed on the display the process defect produced by the process blade having worn out in the conventional dicing process. It is a schematic longitudinal cross-sectional view which shows suitable one Embodiment of the 1st process of the manufacturing method of the semiconductor package of this invention. It is a schematic longitudinal cross-sectional view which shows suitable one Embodiment of the 2nd process of the manufacturing method of the semiconductor package of this invention. It is a schematic longitudinal cross-sectional view which shows suitable one Embodiment of the 3rd process of the manufacturing method of the semiconductor package of this invention. It is a schematic longitudinal cross-sectional view which shows suitable one Embodiment of the process of connecting the bonding wire of the manufacturing method of the semiconductor package of this invention. It is a schematic longitudinal cross-sectional view which shows suitable one Embodiment of the semiconductor package manufactured by the manufacturing method of the semiconductor package of this invention.

  Hereinafter, the present invention will be described in detail with reference to preferred embodiments thereof.

First, the composition for highly heat conductive film adhesives of this invention is demonstrated. The highly thermally conductive film adhesive composition of the present invention contains an epoxy resin (A), an epoxy resin curing agent (B), an inorganic filler (C), and a phenoxy resin (D), and the inorganic filling described above. Agent (C) is the following (i) to (iii):
(I) The average particle size is 0.1 to 5.0 μm,
(Ii) Mohs hardness of 1-8,
(Iii) Thermal conductivity is 30 W / (m · K) or more,
And the content of the inorganic filler (C) is 30 to 70% by volume.

  The epoxy resin (A) according to the present invention is a thermosetting resin having an epoxy group, and such an epoxy resin (A) preferably has a weight average molecular weight of 300 to 2000, and 300 to 1500. More preferably. If the weight average molecular weight is less than the above lower limit, the monomer or dimer increases and the crystallinity becomes strong, so that the film adhesive tends to be brittle. On the other hand, if the upper limit is exceeded, the film adhesive Since the melt viscosity of the substrate becomes high, the unevenness on the substrate cannot be embedded sufficiently when pressure-bonded to the wiring substrate, and the adhesion to the wiring substrate tends to be lowered. In the present invention, the weight average molecular weight is gel permeation chromatography (GPC) (trade name: HLC-82A (manufactured by Tosoh Corporation), solvent: tetrahydrofuran, column: TSKgel G2000HXL (manufactured by Tosoh Corporation) (two) ), G4000HXL (manufactured by Tosoh Corporation) (1), temperature: 38 ° C., speed: 1.0 ml / min), converted in standard polystyrene (trade name: A-1000, manufactured by Tosoh Corporation) It is the value.

  The epoxy resin (A) may be liquid, solid or semi-solid. In the present invention, the liquid means that the softening point is less than 50 ° C., the solid means that the softening point is 60 ° C. or higher, and the semi-solid means that the softening point is softening of the liquid. The point is between the point and the softening point of the solid (from 50 ° C. to less than 60 ° C.) As said epoxy resin (A), a softening point is 100 degrees C or less from a viewpoint that the film adhesive which can reach | attain a low melt viscosity in a suitable temperature range (for example, 60-120 degreeC) is obtained. Is preferred. In the present invention, the softening point is a value measured by a softening point test (ring-and-ball type) method (measurement condition: conforming to JIS-2817).

  In the epoxy resin (A), the crosslink density of the cured body is increased, and as a result, the contact probability between the inorganic fillers (C) to be blended is high and the contact area is widened to obtain a higher thermal conductivity. In view of the above, the epoxy equivalent is preferably 500 g / eq or less, and more preferably 150 to 450 g / eq. In addition, in this invention, an epoxy equivalent means the gram number (g / eq) of resin containing an epoxy group of 1 gram equivalent.

  As the skeleton of the epoxy resin (A), phenol novolak type, orthocresol novolak type, cresol novolak type, dicyclopentadiene type, biphenyl type, fluorene bisphenol type, triazine type, naphthol type, naphthalenediol type, triphenylmethane type , Tetraphenyl type, bisphenol A type, bisphenol F type, bisphenol AD type, bisphenol S type, trimethylolmethane type, etc., but the film-like adhesive having low resin crystallinity and good appearance can be obtained. In view of the above, the triphenylmethane type, the bisphenol A type, the cresol novolak type, and the orthocresol novolak type are preferable, and the order of the molecular structure is increased when the crosslink density is increased and the film adhesive is cured. From the viewpoint of improved thermal conductivity tends to be improved, as the epoxy resin (A), the following equation (1):

[In Formula (1), n shows the integer of 0-10. ]
The triphenylmethane type epoxy resin represented by these is more preferable.

  As the epoxy resin (A), one kind may be used alone, or two or more kinds may be used in combination. When two or more kinds are used in combination, for example, the viscosity of the composition is easily adjusted. Even when the step of thermally pressing the film adhesive and the wafer (wafer laminating step) is performed at a low temperature (preferably 40 to 80 ° C.), the adhesion between the wafer and the film adhesive tends to be exhibited. In view of the above, it is preferable to use a combination of an epoxy resin (a1) having a softening point of 50 to 100 ° C. and an epoxy resin (a2) having a softening point of less than 50 ° C.

  The epoxy resin (a1) is solid or semi-solid at room temperature, and preferably has a softening point of 50 to 100 ° C, more preferably 50 to 80 ° C. If the softening point is less than the lower limit, the viscosity of the obtained film-like adhesive is lowered, so that it tends to be difficult to maintain the film shape at room temperature. On the other hand, if the upper limit is exceeded, the resulting film is obtained. In the adhesive, it tends to be difficult to reach a low melt viscosity in a suitable temperature range (for example, 60 to 120 ° C.).

  As said epoxy resin (a1), it is preferable that a weight average molecular weight exceeds 500 and is 2000 or less, and it is more preferable that it is 600-1200. If the weight average molecular weight is less than the above lower limit, the monomer or dimer increases and the crystallinity becomes strong, so that the film adhesive tends to be brittle. On the other hand, if the upper limit is exceeded, the film adhesive Since the melt viscosity of the substrate becomes high, the unevenness on the substrate cannot be embedded sufficiently when pressure-bonded to the wiring substrate, and the adhesion to the wiring substrate tends to be lowered.

  As the skeleton of such an epoxy resin (a1), triphenylmethane type, bisphenol A type, cresol novolak type, ortho type are used from the viewpoint of obtaining a film-like adhesive having low resin crystallinity and good appearance. From the viewpoint that the cresol novolac type is preferable, the crosslinking density is higher, and the order of the molecular structure is improved and the thermal conductivity tends to be improved when the film adhesive is cured. As (a1), a triphenylmethane type epoxy resin, a bisphenol A type epoxy resin, and a cresol novolac type epoxy resin are more preferable, and a triphenylmethane type epoxy resin represented by the above formula (1) is more preferable.

  As the epoxy resin (a2), even when the step of thermocompression bonding the film adhesive and the wafer (wafer laminating step) is performed at a low temperature (preferably 40 to 80 ° C.), the wafer and the film adhesive From the viewpoint that the adhesiveness tends to be exhibited, the softening point is preferably less than 50 ° C., and the softening point is more preferably 40 ° C. or less. As such an epoxy resin (a2), it is preferable that a weight average molecular weight is 300-500, and it is more preferable that it is 350-450. If the weight average molecular weight is less than the lower limit, the amount of monomers increases and the crystallinity increases, so the film adhesive tends to be brittle. During the laminating process, the adhesion between the wafer and the film adhesive tends to be lowered.

  As the skeleton of such an epoxy resin (a2), from the viewpoint of obtaining a film-like adhesive having low resin crystallinity and good appearance, bisphenol A type and bisphenol A, which are oligomer type liquid epoxy resins, are used. / F mixed type, bisphenol F type, propylene oxide modified bisphenol A type, and from the viewpoint of low melt viscosity and lower crystallinity, the epoxy resin (a2) may be bisphenol A type epoxy resin or bisphenol. An A / F mixed epoxy resin is more preferable.

  As a ratio of the epoxy resin (a1) and the epoxy resin (a2), the mass ratio (a1: a2) is preferably 95: 5 to 30:70, and preferably 70:30 to 40:60. More preferred. If the content of the epoxy resin (a1) is less than the above lower limit, the film adhesive property of the film-like adhesive tends to be strong and difficult to peel off from the cover film or the dicing tape. The viscosity of the film tends to be high, and the properties of the obtained film adhesive tend to be brittle.

  As said epoxy resin (A), it is preferable that content in the composition for highly heat conductive film adhesives of this invention is 5-30 mass%, and it is more preferable that it is 10-25 mass%. When the content is less than the lower limit, the resin component that increases the crosslink density when cured is reduced, and thus the thermal conductivity of the film adhesive tends to be difficult to improve, and on the other hand, exceeds the upper limit. Since the main component is an oligomer, the film state (film tackiness, etc.) tends to change easily even with a slight temperature change.

  As the epoxy resin curing agent (B) according to the present invention, known curing agents such as amines, acid anhydrides and polyhydric phenols can be used, but the epoxy resin (A) and the phenoxy resin ( D) exhibits a curability at a high temperature exceeding the temperature range where the low melt viscosity is obtained, has a fast curability, and further has a high storage stability that can be stored for a long time at room temperature. From the viewpoint of being obtained, it is preferable to use a latent curing agent. Examples of the latent curing agent include dicyandiamide, imidazoles, hydrazides, boron trifluoride-amine complexes, amine imides, polyamine salts, modified products thereof, and microcapsules. These may be used alone or in combination of two or more.

  Content of the said epoxy resin hardening | curing agent (B) is 0.5-50 mass% normally with respect to the said epoxy resin (A), and it is preferable that it is 1-10 mass%. If the content is less than the lower limit, the curing time tends to be longer. On the other hand, if the upper limit is exceeded, excess curing agent remains in the film adhesive, and the residual curing agent adsorbs moisture. There is a tendency that defects are likely to occur in a reliability test after the adhesive is incorporated into a semiconductor.

  The inorganic filler (C) according to the present invention is granular from the viewpoint that it can be highly filled and has fluidity, and its average particle size needs to be 0.1 to 5.0 μm. When the average particle size is less than the lower limit, the fillers are hardly brought into contact with each other, and the thermal conductivity of the film adhesive is lowered. On the other hand, when the average particle size exceeds the above upper limit, when producing a thin film adhesive with a coating machine such as a roll knife coater, the filler becomes a trigger and it is easy to generate streaks on the film surface. The wear rate of the processing blade by the adhesive increases. Furthermore, the average particle diameter of the inorganic filler (C) is preferably 0.5 to 2.0 μm when an ultrathin film of 5 μm or less is produced while ensuring thermal conductivity. In the present invention, the average particle size means a particle size distribution measured by a laser diffraction / scattering method (measuring condition: dispersion medium-sodium hexametaphosphate, laser wavelength: 780 nm, measuring device: Microtrac MT3300EX). The total particle size is 100% and the particle diameter is 50% cumulative in the cumulative volume fraction of particle diameter.

  The inorganic filler (C) according to the present invention has a Mohs hardness of 1 to 8. If the Mohs hardness exceeds the upper limit, the wear rate of the processing blade by the film adhesive increases. Further, the Mohs hardness of the inorganic filler (C) is 3 to 8 from the viewpoint of preventing resin clogging at the cutting edge of the processing blade by ensuring appropriate wearability in the film adhesive. preferable. In the present invention, the Mohs hardness is a 10-stage Mohs hardness tester, which is rubbed in order from a mineral having a lower hardness to the measured object, to determine whether the measured object is damaged or not. Is a value determined.

  The inorganic filler (C) according to the present invention has a thermal conductivity of 30 W / or more (m · K). If the thermal conductivity is less than the lower limit, more inorganic fillers will be added to ensure the desired thermal conductivity. As a result, the melt viscosity of the film adhesive will increase, and it will be crimped to the wiring board. In doing so, the unevenness of the substrate cannot be sufficiently embedded, and the adhesion to the wiring substrate is lowered. The thermal conductivity of the inorganic filler (C) is particularly preferably 100 W / (m · K) or more from the viewpoint of securing high thermal conductivity with a small filling amount. In the present invention, the thermal conductivity of the filler is a thermal diffusivity measured by a laser flash method (measurement conditions: laser pulse width 0.4 ms, laser wavelength 1.06 μm, measuring device: TC7000 type manufactured by ULVAC, Inc.). Is a value calculated from the product of this value, the density of the filler species, and the specific heat.

  The inorganic filler (C) according to the present invention may be made of any material having electrical insulation and thermal conductivity, and examples thereof include aluminum nitride, magnesium oxide, boron nitride, and aluminum hydroxide. Among these, as the inorganic filler (C), aluminum nitride is preferable from the viewpoint that excellent thermal conductivity is exhibited after curing in the film adhesive. Moreover, as said inorganic filler (C), you may use individually by 1 type, or may be used in combination of 2 or more type, but when using combining 2 or more types, it has higher thermal conductivity. From the viewpoint that a film-like adhesive can be obtained, it is more preferable that at least one of the inorganic fillers (C) is aluminum nitride, and 50 volumes with respect to the total amount of the inorganic filler (C). It is more preferable that at least% is aluminum nitride.

  Content in the composition for highly heat conductive film adhesives of this invention is 30-70 volume% of the inorganic filler (C) which concerns on this invention. When the content is less than the lower limit, the thermal conductivity after curing in the film adhesive is lowered, and when used for a semiconductor package, the heat dissipation efficiency to the outside of the package is lowered. On the other hand, if the upper limit is exceeded, the contents of the epoxy resin (A) and the phenoxy resin (D) that act as binders are relatively reduced, and the properties of the film adhesive become brittle. The content is such that a high thermal conductivity (preferably 1.0 W / (m · K) or more) is obtained in the film adhesive after thermosetting, and the increase in the melt viscosity of the film adhesive is increased. It is particularly preferable that the amount is 40 to 60% by volume from the viewpoint that it can be suppressed and the unevenness on the substrate can be sufficiently embedded when pressure-bonding to the wiring substrate to ensure adhesion with the substrate.

  The phenoxy resin (D) according to the present invention is a thermoplastic resin having a weight average molecular weight of 10,000 or more. By using such a phenoxy resin (D), tackiness and brittleness at room temperature are eliminated in the obtained film adhesive.

  The phenoxy resin (D) preferably has a weight average molecular weight of 30,000 to 100,000, more preferably 40,000 to 70,000. When the weight average molecular weight is less than the lower limit, the support of the film adhesive is weakened and the brittleness tends to be strong. On the other hand, when the upper limit is exceeded, the melt viscosity tends to be high. Moreover, as said phenoxy resin (D), it is preferable that glass transition temperature (Tg) is 40-90 degreeC, and it is more preferable that it is 50-80 degreeC. If the glass transition temperature is lower than the lower limit, the film adhesive property at room temperature of the film adhesive becomes strong, and tends to be difficult to peel off from the cover film or the dicing tape. Since the melt viscosity becomes high, the concaves and convexes on the substrate cannot be sufficiently embedded when pressure-bonding to the wiring substrate, and the adhesion to the wiring substrate tends to be lowered.

  Examples of the skeleton of the phenoxy resin (D) include bisphenol A type, bisphenol A / F type, bisphenol F type, bisphenol S type, bisphenol A / S type, and cardo skeleton type. The epoxy resin (A) From the viewpoint that the structure is similar to each other and the compatibility is good, and the melt viscosity is low and the adhesiveness is good, the bisphenol A type is preferable, and in a suitable temperature range (for example, 60 to 120 ° C.). The bisphenol A / F type is preferable from the viewpoint of obtaining a film adhesive capable of reaching a low melt viscosity, and the cardo skeleton type is preferable from the viewpoint of having high heat resistance. Examples of such phenoxy resin (D) include bisphenol A type phenoxy resin obtained from bisphenol A and epichlorohydrin, bisphenol A, bisphenol A / F type phenoxy obtained from bisphenol F and epichlorohydrin. Examples thereof include resins. As the phenoxy resin (D), one of these may be used alone, or two or more may be used in combination. For example, YP-50S (bisphenol A type phenoxy resin, Nippon Kayaku Epoxy) Manufactured Co., Ltd.), YP-70 (Bisphenol A / F type phenoxy resin, manufactured by Nippon Kayaku Epoxy Co., Ltd.), FX-316 (Bisphenol F type phenoxy resin, manufactured by Nippon Kayaku Epoxy Manufacturing Co., Ltd.) Commercially available phenoxy resins such as FX-280S (cardo skeleton type phenoxy resin, manufactured by Nippon Kasei Epoxy Manufacturing Co., Ltd.) may be used as the phenoxy resin (D).

  As said phenoxy resin (D), it is preferable that content in the composition for highly heat conductive film adhesives of this invention is 1-20 mass%, and it is more preferable that it is 3-10 mass%. When the content is less than the lower limit, the film adhesive property of the film adhesive becomes strong and tends to be difficult to peel off from the cover film or the dicing tape. On the other hand, when the content exceeds the upper limit, the melt viscosity of the film adhesive is increased. Therefore, the unevenness on the substrate cannot be embedded sufficiently when pressure-bonded to the wiring board, and the adhesion to the wiring board tends to be lowered.

  In addition to the epoxy resin (A), the epoxy resin curing agent (B), the inorganic filler (C), and the phenoxy resin (D), the composition for a highly thermally conductive film adhesive of the present invention includes: In the range not inhibiting the effect of the present invention, for example, fillers other than the inorganic filler (C), coupling agents, antioxidants, flame retardants, colorants, stress relaxation agents such as butadiene rubber and silicone rubber, etc. The additive may be contained. In the present invention, from the viewpoint that the interface between the epoxy resin (A) and the inorganic filler (B) can be reinforced, and a film-like adhesive having excellent breaking strength and adhesiveness can be obtained. It preferably contains a ring agent, and as such a coupling agent, one containing an amino group or an epoxy group is more preferred. Moreover, when it contains such an additive, it is preferable that the content is 3 mass% or less in the composition for highly heat conductive film adhesives of this invention.

  Next, the highly heat conductive film adhesive of the present invention will be described. The highly heat conductive film adhesive of the present invention is obtained by heating and drying the composition for high heat conductive film adhesive.

  As a preferred embodiment of the method for producing a highly heat conductive film adhesive of the present invention, a varnish obtained by dissolving the above composition for a highly heat conductive film adhesive in a solvent is applied to a release-treated substrate. However, there is a method of heat drying, but the method is not particularly limited.

  As the solvent, known solvents can be appropriately employed. For example, aromatic hydrocarbons such as toluene and xylene, ketones such as methyl isobutyl ketone (MIBK) and methyl ethyl ketone (MEK), ethers such as monoglyme and diglyme. And mixtures thereof. As the base material subjected to the release treatment, a known base material that has been subjected to the release treatment can be appropriately employed. For example, the release-treated polypropylene (PP), the release-treated polyethylene (PE), Examples thereof include polyethylene terephthalate (PET) that has been subjected to a release treatment. As the coating method, a known method can be appropriately employed. Examples thereof include a roll knife coater, a gravure coater, a die coater, and a reverse coater.

  The heat drying is performed at a temperature lower than the curing start temperature of the highly heat conductive film adhesive composition. Such temperature varies depending on the type of resin used, and cannot be generally described, but is preferably 40 to 100 ° C, and more preferably 60 to 100 ° C, for example. If the temperature is lower than the lower limit, the amount of the solvent remaining in the film-like adhesive tends to increase, and the film tackiness tends to be strong. Is hardened, and the adhesiveness of the film adhesive tends to decrease. The heat drying time is preferably 10 to 60 minutes, for example.

  The thus obtained highly heat-conductive film adhesive of the present invention preferably has a thickness of 10 to 150 μm. If the thickness is less than the lower limit, unevenness on the surface of the wiring board cannot be sufficiently embedded, and sufficient adhesion tends not to be ensured.On the other hand, if the upper limit is exceeded, it is difficult to remove the solvent during production. Therefore, the amount of residual solvent increases and the film tackiness tends to increase.

  In the high thermal conductive film adhesive of the present invention, the melt viscosity at 80 ° C. observed when heated with a rheometer at a rate of temperature increase from 20 ° C. to 10 ° C./min may be 10000 Pa · s or less. it can. The melt viscosity is more preferably 10 to 10,000 Pa · s. When the melt viscosity is less than the lower limit, when adhering to the wafer, there is a tendency to contaminate other members due to resin flow or resin rising, and when the melt viscosity exceeds the upper limit, a film adhesive is used. Tends to be easily entrapped at the interface with the adherend when the wafer is bonded to the back surface of the wafer or the surface of the wiring substrate having irregularities.

  Since the high thermal conductive film adhesive of the present invention has such melt viscosity characteristics, it can be pressure-bonded to the adherend in a suitable temperature range (for example, 60 to 120 ° C.). Excellent adhesion is exhibited. In the present invention, the melt viscosity is a value obtained by measuring the viscosity resistance of the molten resin at a predetermined temperature, and the melt viscosity at 80 ° C. is a rheometer (trade name: RS150, manufactured by Haake Corporation). ), The change in viscosity resistance at a temperature range of 20 to 100 ° C. and a heating rate of 10 ° C./min is measured, and the viscosity resistance when the temperature is 80 ° C. in the obtained temperature-viscosity resistance curve.

  Moreover, the high thermal conductivity film adhesive of the present invention can have a thermal conductivity of 1.0 W / (m · K) or more after thermosetting. The thermal conductivity is more preferably 1.5 W / (m · K) or more. If the thermal conductivity is less than the lower limit, the generated heat tends to be difficult to escape to the outside of the package. Since the high thermal conductive film adhesive of the present invention exhibits such excellent thermal conductivity after curing, the high thermal conductive film adhesive of the present invention is adhered to an adherend such as a wafer or a wiring board, By heat curing, the efficiency of heat radiation to the outside of the semiconductor package is improved. In the present invention, the thermal conductivity of the film-like adhesive after thermosetting is a heat flow meter using a thermal conductivity measuring device (trade name: HC-110, manufactured by Eihiro Seiki Co., Ltd.). A value obtained by measuring the thermal conductivity by the method (conforming to JIS-A1412).

  The thermosetting is performed at a temperature equal to or higher than the curing start temperature of the highly thermal conductive film adhesive composition. Such temperature varies depending on the type of resin used, and cannot be generally described. For example, it is preferably 120 to 180 ° C, and more preferably 120 to 140 ° C. If the temperature is lower than the curing start temperature, the thermal curing does not proceed sufficiently, and the strength and thermal conductivity of the film-like adhesive after the thermal curing tend to decrease. There is a tendency that the epoxy resin, the curing agent, the additive, and the like in the adhesive are volatilized and the adhesive layer easily foams. Moreover, as time of the said hardening process, it is preferable that it is for 10 to 180 minutes, for example. Furthermore, in the said thermosetting, it is more preferable to apply the pressure of about 0.1-10 MPa.

  Next, a preferred embodiment of the semiconductor package manufacturing method of the present invention will be described in detail with reference to the drawings. In the following description and drawings, the same or corresponding elements are denoted by the same reference numerals, and duplicate descriptions are omitted. 2A to 2E are schematic longitudinal sectional views showing a preferred embodiment of each step of the method for manufacturing a semiconductor package of the present invention.

  In the method for producing a semiconductor package of the present invention, first, as a first step, as shown in FIG. 2A, the highly thermally conductive film-like adhesive of the present invention is adhered to the back surface of a wafer 1 on which a semiconductor circuit is formed. The adhesive layer 2 is provided by thermocompression bonding the agent.

  As the wafer 1, a wafer having a semiconductor circuit formed on the surface can be used as appropriate, and examples thereof include a silicon wafer, a SiC wafer, and a GaS wafer. As the adhesive layer 2, the high thermal conductive film adhesive of the present invention may be used alone as one layer or may be used by laminating two or more layers.

  As a method of providing such an adhesive layer 2 on the back surface of the wafer 1, a method capable of laminating the high thermal conductive film adhesive on the back surface of the wafer 1 can be appropriately employed. After laminating the high thermal conductive film adhesive on the back surface, when laminating two or more layers, a method of laminating the high thermal conductive film adhesive sequentially until the desired thickness is obtained, or a high thermal conductive film shape The method of laminating | bonding the adhesive agent on the back surface of the wafer 1 after laminating | stacking beforehand the target thickness etc. can be mentioned. Moreover, it does not restrict | limit especially as an apparatus used when providing such an adhesive bond layer 2 in the back surface of the wafer 1, For example, well-known apparatuses, such as a roll laminator, can be used suitably.

  When the adhesive layer 2 is provided on the back surface of the wafer 1, the high thermal conductive film adhesive has a melt viscosity of 10000 Pa · s or less and the thermosetting of the high thermal conductive film adhesive. It is preferable that the high thermal conductive film adhesive is bonded to the back surface of the wafer 1 at a temperature within a temperature range lower than the start temperature. Such temperature conditions vary depending on the type of resin to be used and cannot be generally described, but are preferably 40 to 100 ° C, and more preferably 40 to 80 ° C, for example. When the temperature is lower than the lower limit, air tends to be easily caught at the interface between the adhesive layer 2 and the wafer 1, and when the adhesive layer 2 is a laminate of two or more layers, the high thermal conductivity There is a tendency that the adhesion between the layers of the adhesive film-like adhesive is insufficient. On the other hand, when the temperature is higher than the thermosetting start temperature, the high thermal conductive film adhesive is cured, and the adhesiveness when adhering to the wiring board tends to be lowered. In addition, the thermocompression bonding time is preferably about 1 to 180 seconds, for example.

  Further, when the adhesive layer 2 is provided on the back surface of the wafer 1, it is preferable to apply a pressure of about 0.1 to 1 MPa. If the pressure is less than the lower limit, it takes time to bond the adhesive layer 2 to the wafer 1, and further, it tends to be impossible to sufficiently prevent the occurrence of voids. On the other hand, if the pressure exceeds the upper limit, the adhesive protrudes. Tend to be out of control.

  Next, in the semiconductor package manufacturing method of the present invention, as shown in FIG. 2B, the wafer 1 and the dicing tape 3 are bonded to each other through the adhesive layer 2 as shown in FIG. The semiconductor element 4 provided with the wafer 1 and the adhesive layer 2 is obtained by dicing the layer 2 at the same time.

  It does not restrict | limit especially as the dicing tape 3, A well-known dicing tape can be used suitably. Furthermore, the apparatus used for dicing is not particularly limited, and a known dicing apparatus can be used as appropriate.

  In the present invention, since the adhesive layer 2 is made of the high thermal conductive film adhesive obtained using the composition for high thermal conductive film adhesive of the present invention, the wear rate of the processing blade of the dicing apparatus is sufficient. Small. For example, a silicon wafer having a thickness of 100 μm and an adhesive layer having a thickness of 20 μm made of a highly heat conductive film adhesive are formed by a biaxial dicing blade (Z1: NBC-ZH2030-SE (DD), manufactured by DISCO). / Z2: When dicing to 3.0 × 3.0 mm size with a dicing apparatus (trade name: DFD-6340, manufactured by DISCO) in which NBC-ZH127F-SE (BB), manufactured by DISCO) is installed In addition, the wear rate of the machining blade at a cut length of 20 m can be 5.0% or less. If the wear rate exceeds the upper limit, a problem arises that the high thermal conductive film adhesive is not fully cut during the dicing process. In addition, the wear rate and replacement frequency of the processing blade increase, resulting in problems of increased costs and reduced productivity.

  Next, in the semiconductor package manufacturing method of the present invention, as a third step, as shown in FIG. 2C, the dicing tape 3 is detached from the adhesive layer 2, and the semiconductor element 4 and the wiring board 5 are bonded to the adhesive layer. 2 is used for thermocompression bonding.

  As the wiring substrate 5, a substrate having a semiconductor circuit formed on the surface can be used as appropriate. For example, a printed circuit board (PCB), various lead frames, and electronic components such as a resistance element and a capacitor are mounted on the substrate surface. What is being done is mentioned. In addition, by using another semiconductor element as the wiring substrate 5, a plurality of semiconductor elements can be stacked via the adhesive layer 2.

  A method for mounting the semiconductor element 4 on the wiring board 5 is not particularly limited, and the adhesive layer 2 is used to mount the semiconductor element 4 on the wiring board 5 or an electronic component mounted on the surface of the wiring board 5. A conventional method capable of bonding can be appropriately employed. As such a mounting method, a conventionally known heating method such as a method using a mounting technique using a flip chip bonder having a heating function from the upper part, a method using a die bonder having a heating function only from the lower part, a method using a laminator, etc. And a pressurizing method.

  Thus, by mounting the semiconductor element 4 on the wiring board 5 using the adhesive layer 2 made of the high thermal conductive film adhesive, the high thermal conductivity is formed on the unevenness on the wiring board 5 caused by the electronic component. The semiconductor element 4 and the wiring board 5 can be brought into close contact and fixed while following the adhesive film adhesive.

  When the wiring substrate 5 and the semiconductor element 4 are bonded, the high thermal conductive film adhesive has a melt viscosity of not less than 10000 Pa · s and the thermosetting of the high thermal conductive film adhesive. The wiring substrate 5 and the semiconductor element 4 are preferably bonded at a temperature within a temperature range that is lower than the start temperature. By bonding the wiring board 5 and the semiconductor element 4 under such temperature conditions, air tends to be less likely to be caught in the interface between the adhesive layer 2 and the wiring board 5. Such temperature conditions, time conditions, and pressure conditions are as described in the first step.

  Next, in the semiconductor package manufacturing method of the present invention, as the fourth step, the high thermal conductive film adhesive is thermally cured. The temperature of the heat curing is not particularly limited as long as it is equal to or higher than the heat curing start temperature of the high thermal conductive film adhesive, and varies depending on the type of resin to be used. 120-180 ° C is preferable, and 120-130 ° C is more preferable. If the temperature is lower than the thermosetting start temperature, thermosetting does not proceed sufficiently, and the strength and thermal conductivity of the adhesive layer 2 tend to decrease. On the other hand, if the temperature exceeds the upper limit, a film adhesive is used during the curing process. There is a tendency that the epoxy resin, the curing agent, the additive and the like in the inside evaporate and foam easily. Moreover, as time of the said hardening process, it is preferable that it is 10 to 180 minutes, for example, and also in the said thermosetting, it is more preferable to apply the pressure of about 0.1-10 MPa. In the present invention, the adhesive layer 2 having excellent breaking strength and thermal conductivity is obtained by thermosetting the high thermal conductive film adhesive, and the wiring substrate 5 and the semiconductor element 4 are firmly bonded. A semiconductor package can be obtained.

  Next, in the method for manufacturing a semiconductor package of the present invention, it is preferable to connect the wiring substrate 5 and the semiconductor element 4 via the bonding wires 6 as shown in FIG. 2D. Such a connection method is not particularly limited, and a conventionally known method such as a wire bonding method, a TAB (Tape Automated Bonding) method, or the like can be appropriately employed.

  Next, as shown in FIG. 2E, it is preferable to seal the wiring substrate 5 and the semiconductor element 4 with the sealing resin 7, and thus the semiconductor package 8 can be obtained. The sealing resin 7 is not particularly limited, and a known sealing resin that can be used for manufacturing a semiconductor package can be used as appropriate. Moreover, it does not restrict | limit especially as a method using sealing resin 7, A well-known method can be employ | adopted suitably.

  According to such a method of manufacturing a semiconductor package of the present invention, the interface with the wafer 1 and the irregularities on the wiring substrate 5 can be embedded by the adhesive layer 2 made of a highly heat conductive film adhesive. The semiconductor element 4 can be fixed to the wiring board 5 without creating a space between the wiring board 5 and the adhesive layer 2 and between the wiring board 5 and the semiconductor element 4. Further, in the method for manufacturing a semiconductor package of the present invention, since the high thermal conductive film adhesive using the composition for high thermal conductive film adhesive of the present invention is used, the wear rate of the processing blade is reduced. can do. Furthermore, the semiconductor package manufactured by the manufacturing method of the present invention has high heat dissipation efficiency to the outside of the package because the high thermal conductive film adhesive used for the adhesive layer exhibits excellent thermal conductivity after curing.

  EXAMPLES Hereinafter, although this invention is demonstrated more concretely based on an Example and a comparative example, this invention is not limited to a following example. In each example and comparative example, the thermal conductivity, melt viscosity, and processing blade wear rate were measured by the following methods.

(Measurement of thermal conductivity)
The obtained film adhesive was cut into a square piece with a side of 50 mm or more, a sample cut to have a thickness of 5 mm or more was laminated, placed on a disk-shaped mold with a diameter of 50 mm and a thickness of 5 mm, and a compression press After taking out by heating for 10 minutes at a temperature of 150 ° C. and a pressure of 2 MPa using a molding machine, the film adhesive is thermoset by heating in a dryer at a temperature of 180 ° C. for 1 hour, diameter 50 mm, thickness A 5 mm disk-shaped test piece was obtained. About this test piece, heat conductivity (W / (m · K) was measured by a heat flow meter method (based on JIS-A1412) using a thermal conductivity measuring device (trade name: HC-110, manufactured by Eihiro Seiki Co., Ltd.). )) Was measured.

(Measurement of melt viscosity)
The obtained film adhesive was cut into a size of 2.5 × 2.5 cm, and the temperature was 50 ° C., the pressure was 0.3 MPa, using a vacuum laminator device (trade name: MVLP-500, manufactured by Meiki Seisakusho). The test piece which laminated | stacked and bonded the film adhesive to the thickness of 300 micrometers on the conditions for the bonding time of 10 second was obtained. About this test piece, using a rheometer (RS150, manufactured by Haake), a change in viscosity resistance at a temperature range of 20 to 100 ° C. and a heating rate of 10 ° C./min was measured, and from the obtained temperature-viscosity resistance curve The melt viscosity (Pa · s) at 80 ° C. was calculated.

(Measurement of processing blade wear rate)
First, the obtained film adhesive was attached to a dummy silicon wafer (8 inch size, thickness 100 μm) using a manual laminator (trade name: FM-114, manufactured by Technovision) at a temperature of 70 ° C. and a pressure of 0.3 MPa. Then, using the same manual laminator, dicing tape (trade name: G-11, manufactured by Lintec Co., Ltd.) and dicing frame on the side opposite to the dummy silicon wafer of the film adhesive at room temperature and pressure of 0.3 MPa (Product name: DTF2-8-1H001, manufactured by DISCO) was bonded to obtain a test piece. About this test piece, a dicing apparatus (trade name) in which a biaxial dicing blade (Z1: NBC-ZH2030-SE (DD), manufactured by DISCO / Z2: NBC-ZH127F-SE (BB), manufactured by DISCO) was installed. : DFD-6340, manufactured by DISCO Corporation), and dicing was performed to a size of 3.0 × 3.0 mm. Set up before dicing (before processing) and at the time of 20m cutting (after processing), measure blade blade tip amount by non-contact type (laser type), blade wear amount after processing (blade blade tip before processing) The amount of protrusion-the amount of blade blade tip after processing) was calculated. From this amount of wear, the following formula:
Machining blade wear rate (%) = (blade wear after machining) ÷ (blade tip advance before machining) × 100
Thus, the processing blade wear rate (%) was calculated.

Example 1
First, triphenylmethane type epoxy resin (trade name: EPPN-501H, weight average molecular weight: 1000, softening point: 55 ° C., solid, epoxy equivalent: 167, manufactured by Nippon Kayaku Co., Ltd.) 55 parts by mass, bisphenol A type 49 parts by mass of epoxy resin (trade name: YD-128, weight average molecular weight: 400, softening point: 25 ° C. or less, liquid, epoxy equivalent: 190, manufactured by Nippon Kayaku Epoxy Co., Ltd.), and bisphenol A / F Type phenoxy resin (trade name: YP-70, weight average molecular weight: 55000, Tg: 70 ° C., manufactured by Nippon Kayaku Epoxy Manufacturing Co., Ltd.) 30 parts by mass, 91 parts by mass of methyl isobutyl ketone (MIBK) A 500 ml separable flask as a solvent was heated and stirred at a temperature of 110 ° C. for 2 hours to obtain a resin varnish. Next, 225 parts by mass of this resin varnish was transferred to an 800 ml planetary mixer, and aluminum nitride (trade name: H grade, average particle size 1.1 μm, Mohs hardness 8, thermal conductivity 200 W / (m · K), (stock) ) Tokuyama) 355 parts by mass, imidazole type curing agent (trade name: 2PHZ-PW, manufactured by Shikoku Kasei Co., Ltd.) 9 parts by mass, after stirring and mixing at room temperature for 1 hour, vacuum degassing to obtain a mixed varnish It was. Subsequently, the obtained mixed varnish was applied onto a 50 μm thick release-treated PET film and dried by heating (held at 100 ° C. for 10 minutes) to obtain a film adhesive having a thickness of 20 μm. The melt viscosity and processing blade wear rate of the obtained film adhesive and the thermal conductivity after thermosetting were measured. The obtained results are shown in Table 1 together with the composition of the film adhesive.

(Example 2)
Except for using 489 parts by mass of aluminum nitride (trade name: H grade, average particle size 1.1 μm, Mohs hardness 8, thermal conductivity 200 W / (m · K), manufactured by Tokuyama Corporation) A film adhesive was obtained in the same manner as in Example 1. The film-like adhesive obtained was measured in the same manner as in Example 1. The obtained results are shown in Table 1 together with the composition of the film adhesive.

(Example 3)
Except for using 267 parts by mass of aluminum nitride (trade name: H grade, average particle size 1.1 μm, Mohs hardness 8, thermal conductivity 200 W / (m · K), manufactured by Tokuyama Corporation) A film adhesive was obtained in the same manner as in Example 1. The film-like adhesive obtained was measured in the same manner as in Example 1. The obtained results are shown in Table 1 together with the composition of the film adhesive.

Example 4
A triphenylmethane type epoxy resin (trade name: EPPN-501H, weight average molecular weight: 1000, softening point: 55 ° C., solid, epoxy equivalent: 167, manufactured by Nippon Kayaku Co., Ltd.) is used as a cresol novolac type epoxy resin (trade name) : ECON-1020-80, weight average molecular weight: 1200, softening point: 80 ° C., solid, epoxy equivalent: 200, manufactured by Nippon Kayaku Co., Ltd. An agent was obtained. The film-like adhesive obtained was measured in the same manner as in Example 1. The obtained results are shown in Table 1 together with the composition of the film adhesive.

(Example 5)
Triphenylmethane type epoxy resin (trade name: EPPN-501H, weight average molecular weight: 1000, softening point: 55 ° C., solid, epoxy equivalent: 167, manufactured by Nippon Kayaku Co., Ltd.) is replaced with bisphenol A type epoxy resin (trade name) : YD-011, weight average molecular weight: 1000, softening point: 70 ° C., solid, epoxy equivalent: 450, manufactured by Nikka Epoxy Manufacturing Co., Ltd.) An agent was obtained. The film-like adhesive obtained was measured in the same manner as in Example 1. The obtained results are shown in Table 1 together with the composition of the film adhesive.

(Example 6)
Instead of aluminum nitride (trade name: H grade, average particle size 1.1 μm, Mohs hardness 8, thermal conductivity 200 W / (m · K), manufactured by Tokuyama Corporation), aluminum nitride (trade name: 5.0 μm) A film-like adhesive was obtained in the same manner as in Example 1 except that aluminum nitride, average particle size 5.0 μm, Mohs hardness 8, thermal conductivity 200 W / (m · K), manufactured by Tokuyama Corporation) was used. It was. The film-like adhesive obtained was measured in the same manner as in Example 1. The obtained results are shown in Table 1 together with the composition of the film adhesive.

(Example 7)
The amount of aluminum nitride (trade name: 5.0 μm aluminum nitride, average particle size 5.0 μm, Mohs hardness 8, thermal conductivity 200 W / (m · K), manufactured by Tokuyama Corporation) was replaced with 489 parts by mass. Except for this, a film adhesive was obtained in the same manner as in Example 6. The film-like adhesive obtained was measured in the same manner as in Example 1. The obtained results are shown in Table 1 together with the composition of the film adhesive.

(Example 8)
The amount of aluminum nitride (trade name: 5.0 μm aluminum nitride, average particle size 5.0 μm, Mohs hardness 8, thermal conductivity 200 W / (m · K), manufactured by Tokuyama Corporation) was changed to 267 parts by mass. Except for this, a film adhesive was obtained in the same manner as in Example 6. The film-like adhesive obtained was measured in the same manner as in Example 1. The obtained results are shown in Table 1 together with the composition of the film adhesive.

(Comparative Example 1)
Instead of 355 parts by mass of aluminum nitride (trade name: H grade, average particle size 1.1 μm, Mohs hardness 8, thermal conductivity 200 W / (m · K), manufactured by Tokuyama Corporation), spherical silica (trade name: FB) -3 SDX, average particle size 3.0 μm, Mohs hardness 7, thermal conductivity 1.0 W / (m · K), manufactured by Denki Kagaku Kogyo Co., Ltd.) Thus, a film adhesive was obtained. The film-like adhesive obtained was measured in the same manner as in Example 1. The obtained results are shown in Table 1 together with the composition of the film adhesive.

(Comparative Example 2)
Magnesium oxide (trade name: cool) instead of 355 parts by mass of aluminum nitride (trade name: H grade, average particle size 1.1 μm, Mohs hardness 8, thermal conductivity 200 W / (m · K), manufactured by Tokuyama Corporation) A film-like shape as in Example 1 except that 385 parts by mass of filler, average particle size 40 μm, Mohs hardness 5.5, thermal conductivity 13 W / (m · K), manufactured by Tateho Chemical Co., Ltd.) were used. An adhesive was obtained. The film-like adhesive obtained was measured in the same manner as in Example 1. The obtained results are shown in Table 1 together with the composition of the film adhesive.

(Comparative Example 3)
Instead of 355 parts by mass of aluminum nitride (trade name: H grade, average particle size 1.1 μm, Mohs hardness 8, thermal conductivity 200 W / (m · K), manufactured by Tokuyama Corporation), spherical alumina (trade name: AX3 -15R, average particle size 3.0 μm, Mohs hardness 9, thermal conductivity 36 W / (m · K), manufactured by Nippon Steel Materials Co., Ltd.) A shaped adhesive was obtained. The film-like adhesive obtained was measured in the same manner as in Example 1. The obtained results are shown in Table 1 together with the composition of the film adhesive.

(Comparative Example 4)
Instead of 355 parts by mass of aluminum nitride (trade name: H grade, average particle size 1.1 μm, Mohs hardness 8, thermal conductivity 200 W / (m · K), manufactured by Tokuyama Corporation), boron nitride (trade name: HP -01, average particle size 10 μm, Mohs hardness 2, thermal conductivity 60 W / (m · K), Mizushima Alloy Iron Co., Ltd.) was used in the same manner as in Example 1 except that 247 parts by mass was used. An agent was obtained. The film-like adhesive obtained was measured in the same manner as in Example 1. The obtained results are shown in Table 1 together with the composition of the film adhesive.

  As is clear from the results shown in Table 1, the high thermal conductive film adhesives obtained in Examples 1 to 8 have a sufficiently low melt viscosity at 80 ° C., and the wear rate of the processing blade is sufficiently high. It was confirmed that it was small and exhibited excellent thermal conductivity after curing.

  As described above, according to the composition for a highly thermally conductive film adhesive of the present invention, the adhesiveness to the adherend is excellent, the wear rate of the processing blade is sufficiently small, and the heat after curing is excellent. It becomes possible to obtain a highly heat-conductive film adhesive that exhibits conductivity.

  Further, according to the semiconductor package manufacturing method of the present invention, the unevenness on the interface with the wafer or on the wiring board can be embedded with the adhesive layer made of the high thermal conductive film adhesive of the present invention. The semiconductor element can be fixed to the wiring board without generating a space between the semiconductor element and the wear rate of the processing blade can be reduced.

  Furthermore, the semiconductor package of the present invention has high heat dissipation efficiency to the outside of the package because the high thermal conductive film adhesive used for the adhesive layer exhibits excellent thermal conductivity after curing.

  Therefore, the present invention is very useful as a technique for bonding between a semiconductor element and a wiring board in a semiconductor package or between a semiconductor element and a semiconductor element.

  DESCRIPTION OF SYMBOLS 1 ... Wafer, 2 ... Adhesive layer, 3 ... Dicing tape, 4 ... Semiconductor element, 5 ... Wiring board, 6 ... Bonding wire, 7 ... Sealing resin, 8 ... Semiconductor package.

Claims (7)

It contains an epoxy resin (A), an epoxy resin curing agent (B), an inorganic filler (C), and a phenoxy resin (D), and the inorganic filler (C) includes the following (i) to (iii):
(I) The average particle size is 0.1 to 5.0 μm,
(Ii) Mohs hardness of 1-8,
(Iii) Thermal conductivity is 30 W / (m · K) or more,
Satisfy all the conditions of
Content of the said inorganic filler (C) is 30-70 volume%, The composition for highly heat conductive film adhesives characterized by the above-mentioned. The epoxy resin (A) is represented by the following formula (1):
[In Formula (1), n shows the integer of 0-10. ]
The composition for highly heat conductive film adhesives of Claim 1 which is a triphenylmethane type epoxy resin represented by these.   The composition for high thermal conductive film adhesive according to claim 1 or 2, wherein the inorganic filler (C) is aluminum nitride.   It is obtained by heat-drying the composition for high thermal conductive film adhesives according to any one of claims 1 to 3, and has a thickness of 10 to 150 µm. Film adhesive. The melt viscosity at 80 ° C. observed when heated at a rate of temperature increase from 20 ° C. to 10 ° C./min with a rheometer is 10,000 Pa · s or less,
The thermal conductivity after thermosetting is 1.0 W / (m · K) or more,
The highly heat conductive film adhesive of Claim 4 characterized by these. A first step of providing an adhesive layer by thermocompression bonding the highly heat conductive film adhesive according to claim 4 or 5 on the back surface of the wafer having a semiconductor circuit formed on the surface;
A second step of obtaining a semiconductor element including the wafer and the adhesive layer by dicing the wafer and the adhesive layer simultaneously after bonding the wafer and the dicing tape through the adhesive layer. When,
A third step of detaching the dicing tape from the adhesive layer and thermocompression bonding the semiconductor element and the wiring board through the adhesive layer;
A fourth step of thermosetting the high thermal conductive film adhesive;
A method for manufacturing a semiconductor package, comprising:   A semiconductor package obtained by the manufacturing method according to claim 6.