JP2009149727A - Film-like adhesive, semiconductor package using it, and its manufacturing method - Google Patents

Film-like adhesive, semiconductor package using it, and its manufacturing method Download PDF

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JP2009149727A
JP2009149727A JP2007327264A JP2007327264A JP2009149727A JP 2009149727 A JP2009149727 A JP 2009149727A JP 2007327264 A JP2007327264 A JP 2007327264A JP 2007327264 A JP2007327264 A JP 2007327264A JP 2009149727 A JP2009149727 A JP 2009149727A
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adhesive
film
temperature
epoxy resin
viscosity
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JP5345313B2 (en
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Minoru Morita
稔 森田
Hidekazu Taichi
英一 太地
Tokuyuki Kirikae
徳之 切替
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Nippon Steel Chemical and Materials Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a film-like adhesive which enables to mount a semiconductor element on a wiring board while sufficiently preventing bad conditions such as air entrainment and resin creeping-up and which enables to widen the temperature range wherein the semiconductor element can be mounted on the wiring board. <P>SOLUTION: The film-like adhesive is formed by shaping an adhesive composition into a film shape. The adhesive composition contains (A) an epoxy resin, (B) silica, (C) an epoxy resin curing agent and (D) an organic solvent. The content of the silica (B) in the adhesive composition is in the range of 10-50 mass% in terms of solids, and the epoxy resin curing agent (C) is the one that has resistance to the organic solvent (D) and a melting point of ≥150°C. The film-like adhesive satisfies specific requirements with respect to the relationships between the measured temperature and the melt viscosity as it is elevated in temperature at the temperature-rise speed of 10°C/min from room temperature. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、フィルム状接着剤、それを用いた半導体パッケージ、及びその製造方法に関し、より詳しくは、半導体パッケージ内の半導体素子と配線基板とを接合する際に好適に使用することができる絶縁性フィルム状接着剤に関する。   The present invention relates to a film adhesive, a semiconductor package using the same, and a method for manufacturing the same, and more specifically, an insulating property that can be suitably used when bonding a semiconductor element and a wiring board in a semiconductor package. The present invention relates to a film adhesive.

近年、電子機器の小型化及び高機能化が進む中で、内部に搭載される半導体パッケージの構造は限られた実装領域の中で実装効率をより高めることが求められている。例えば、周辺端子配列のクワッドフラットパッケージ（ＱＦＰ）に代わり、面端子配列のチップサイズパッケージ（ＣＳＰ）やボールグリッドアレイ（ＢＧＡ）等の半導体パッケージが増えてきた。また単一のパッケージ内に複数個の半導体素子を搭載することにより、携帯機器等に搭載されるメモリへ付加価値を付与したり、メモリ容量を増大させたりすることを狙ったスタックドパッケージ等の半導体パッケージが検討されている。   In recent years, with the progress of downsizing and higher functionality of electronic devices, the structure of a semiconductor package mounted inside is required to further improve the mounting efficiency within a limited mounting area. For example, instead of a quad flat package (QFP) with a peripheral terminal arrangement, semiconductor packages such as a chip size package (CSP) and a ball grid array (BGA) with a surface terminal arrangement have increased. In addition, by mounting a plurality of semiconductor elements in a single package, it is possible to add value to the memory mounted on portable devices, etc., or to increase the memory capacity, such as a stacked package. Semiconductor packages are being considered.

このような高密度実装化の要求に対し、半導体パッケージは部材の薄型化、内部構造の緻密化が進行しており、半導体素子と配線基板間を接合するダイアタッチ材料においては、樹脂流れ、樹脂のはい上がりによる半導体素子、ワイヤーパッド等の他部材への汚染を防止することが要求されている。そのため、ダイアタッチ材料としては従来のペースト形態のものに代わりフィルム形態のもの（ダイアタッチフィルム）への要求が高まってきている。   In response to such demands for high-density mounting, semiconductor packages have been made thinner and the internal structure has become denser. In die attach materials that join between a semiconductor element and a wiring board, resin flow, resin It is required to prevent contamination of other members such as semiconductor elements and wire pads due to the rising of the metal. Therefore, as a die attach material, a demand for a film form (die attach film) instead of a conventional paste form is increasing.

このような半導体パッケージにおいて、半導体素子が搭載される配線基板の表面は必ずしも平滑な面状態ではないため、ダイアタッチ工程において被着体との界面に空気を巻き込むことがある。このように巻き込まれた空気は加熱硬化後の接着力を低下させるだけでなく、パッケージクラックの原因ともなる。また、このようなダイアタッチフィルムが凹凸のある配線基板の面によく追従するには、搭載温度における溶融粘度が低いことが必要である。従って、常温ではフィルム性を保持するための高粘度を保ちつつ、搭載温度域で低粘度（例えば１０００Ｐａ・ｓ以下）に到達できることが必要である。そして、例えば、特開２００７−１０３９５４号公報（特許文献１）や特開２００７−１５７７５８号公報（特許文献２）には、上記のような特性を保持するフィルム材料が開示されている。しかしながら、搭載温度域での粘度が低すぎる（例えば１０Ｐａ・ｓ未満）場合には、ペースト形態のダイアタッチ材料と同様に半導体素子への樹脂のはい上がり、配線基板上ワイヤーパッドの汚染等の不具合が発生するという問題があった。   In such a semiconductor package, since the surface of the wiring board on which the semiconductor element is mounted is not necessarily a smooth surface state, air may be caught at the interface with the adherend in the die attach process. The air thus entrained not only reduces the adhesive strength after heat curing, but also causes package cracks. Moreover, in order for such a die attach film to follow the surface of a wiring board with unevenness | corrugation well, it is necessary for the melt viscosity in mounting temperature to be low. Therefore, it is necessary to be able to reach a low viscosity (for example, 1000 Pa · s or less) in the mounting temperature range while maintaining a high viscosity for maintaining film properties at room temperature. For example, Japanese Unexamined Patent Application Publication No. 2007-103954 (Patent Document 1) and Japanese Unexamined Patent Application Publication No. 2007-157758 (Patent Document 2) disclose film materials that maintain the above characteristics. However, if the viscosity in the mounting temperature range is too low (for example, less than 10 Pa · s), the resin will rise to the semiconductor element as in the case of the paste-type die attach material, and defects such as contamination of the wire pads on the wiring board There was a problem that occurred.

また、半導体素子を配線基板に搭載する時の最適温度領域は広いことが求められている。例えば、近年薄型化している有機基板〔ビスマレイミド−トリアジン基板（ＢＴ基板）など〕を使用する場合には、熱による基板反りが発生しやすくなるため、ダイアタッチフィルムには１２０℃以下の低温領域においても十分に粘度が低下して半導体素子が搭載可能となることが求められる。しかしながら、前記特許文献等に記載されているような従来材料を用いた場合には、低温領域において低粘度となる温度領域が狭いために、半導体素子の搭載温度が限定されるという問題があった。
特開２００７−１０３９５４号公報 特開２００７−１５７７５８号公報 Further, it is required that the optimum temperature range when mounting the semiconductor element on the wiring board is wide. For example, when an organic substrate that has been thinned in recent years (such as a bismaleimide-triazine substrate (BT substrate)) is likely to be warped by heat, the die attach film has a low temperature region of 120 ° C. or lower. However, it is required that the semiconductor device can be mounted with sufficiently reduced viscosity. However, when a conventional material as described in the above-mentioned patent document is used, there is a problem that the temperature for mounting the semiconductor element is limited because the temperature range where the viscosity is low in the low temperature range is narrow. .
JP 2007-103954 A JP 2007-157758 A

本発明は、上記従来技術の有する課題に鑑みてなされたものであり、空気の巻き込みや樹脂のはい上がり等の不良を十分に防止しつつ、半導体素子を配線基板に搭載することを可能とすると共に、半導体素子を配線基板に搭載することが可能な温度範囲を広げることを可能とするフィルム状接着剤、並びにそれを用いた半導体パッケージ及びその製造方法を提供することを目的とする。   The present invention has been made in view of the above-described problems of the prior art, and enables a semiconductor element to be mounted on a wiring board while sufficiently preventing defects such as air entrainment and resin rising. In addition, an object is to provide a film-like adhesive capable of expanding a temperature range in which a semiconductor element can be mounted on a wiring board, a semiconductor package using the same, and a method for manufacturing the same.

本発明者らは、上記目的を達成すべく鋭意研究を重ねた結果、接着剤組成物をフィルム状に成形してなるフィルム状接着剤において、前記フィルム状接着剤が室温から１０℃／分の昇温速度で昇温した場合における測定温度と溶融粘度との関係が特定の条件を満たすものを用いることにより、空気の巻き込みや樹脂のはい上がり等の不良を十分に防止しつつ、半導体素子を配線基板に搭載することが可能となると共に、半導体素子を配線基板に搭載することが可能な温度範囲を広げることが可能となることを見出し、本発明を完成するに至った。   As a result of intensive studies to achieve the above object, the inventors of the present invention have obtained a film adhesive obtained by forming the adhesive composition into a film, and the film adhesive is from room temperature to 10 ° C./min. By using the one that satisfies the specific condition of the relationship between the measurement temperature and the melt viscosity when the temperature is raised at the rate of temperature rise, the semiconductor element can be sufficiently prevented while preventing defects such as air entrainment and resin rising. The present invention has been completed by finding that it is possible to mount on a wiring board and to expand a temperature range in which a semiconductor element can be mounted on the wiring board.

すなわち、本発明のフィルム状接着剤は、接着剤組成物をフィルム状に成形してなるフィルム状接着剤であって、
前記接着剤組成物が、（Ａ）エポキシ樹脂、（Ｂ）シリカ、（Ｃ）エポキシ樹脂硬化剤及び（Ｄ）有機溶剤を含有するものであり、前記接着剤組成物中の前記（Ｂ）シリカの含有比率が固形分換算で１０〜５０質量％の範囲内にあり、前記（Ｃ）エポキシ樹脂硬化剤が前記（Ｄ）有機溶剤に対する耐性及び１５０℃以上の融点を有するものであり、且つ、
前記フィルム状接着剤が、室温から１０℃／分の昇温速度で昇温した場合における測定温度と溶融粘度との関係が下記条件（i）及び（ii）：
（i）溶融粘度（η）が最低となる最低溶融粘度（ηｍｉｎ）が１０〜１０００Ｐａ・ｓの範囲内にあること、
（ii）溶融粘度（η）が下記数式（Ｆ１）：
η ≦ ηｍｉｎ × １．１ 〔Ｐａ・ｓ〕 ・・・（Ｆ１）
で表される条件を満たす粘度安定温度領域に入る温度（Ｔ１）と前記粘度安定温度領域を出る温度（Ｔ２）とが下記数式（Ｆ２）及び（Ｆ３）：
７０ ≦ Ｔ１ ≦ １２０ 〔℃〕 ・・・（Ｆ２）
１０ ≦ Ｔ２ − Ｔ１ 〔℃〕 ・・・（Ｆ３）
で表される条件を満たすこと、
を満たすものであることを特徴とするものである。 That is, the film adhesive of the present invention is a film adhesive formed by forming the adhesive composition into a film,
The adhesive composition contains (A) an epoxy resin, (B) silica, (C) an epoxy resin curing agent, and (D) an organic solvent, and the (B) silica in the adhesive composition The content ratio is in the range of 10 to 50% by mass in terms of solid content, the (C) epoxy resin curing agent has a resistance to the (D) organic solvent and a melting point of 150 ° C. or higher, and
When the film adhesive is heated from room temperature at a temperature rising rate of 10 ° C./min, the relationship between the measurement temperature and the melt viscosity is the following conditions (i) and (ii):
(I) The minimum melt viscosity (η min ) at which the melt viscosity (η) is lowest is in the range of 10 to 1000 Pa · s,
(Ii) The melt viscosity (η) is the following formula (F1):
η ≦ η min × 1.1 [Pa · s] (F1)
The temperature (T 1 ) that enters the viscosity stable temperature region that satisfies the condition represented by the following equation (F 2) and (F 3) are the temperatures that exit the viscosity stable temperature region (T 2 ):
70 ≦ T 1 ≦ 120 [° C.] (F2)
10 ≦ T 2 −T 1 [° C.] (F3)
Satisfying the condition represented by
It is characterized by satisfying.

また、本発明のフィルム状接着剤においては、前記（Ｃ）エポキシ樹脂硬化剤が下記一般式（１）：   Moreover, in the film adhesive of this invention, the said (C) epoxy resin hardening | curing agent is following General formula (1):

Figure 2009149727
Figure 2009149727

（式（１）中、ｎは１〜１０の整数を表す。）
で表されるヒドラジド化合物であることが好ましい。 (In formula (1), n represents an integer of 1 to 10)
It is preferable that it is a hydrazide compound represented by these.

さらに、本発明のフィルム状接着剤においては、前記接着剤組成物が（Ｅ）粘度調整剤として界面活性剤を更に含有することが好ましい。   Furthermore, in the film adhesive of this invention, it is preferable that the said adhesive composition further contains surfactant as (E) viscosity modifier.

また、本発明のフィルム状接着剤の厚みは１０〜１５０μｍの範囲であることが好ましい。   Moreover, it is preferable that the thickness of the film adhesive of this invention is the range of 10-150 micrometers.

本発明の半導体パッケージの製造方法は、少なくとも一つの半導体素子が形成されたウェハの裏面に前記フィルム状接着剤を形成し、その後前記フィルム状接着剤の表面にダイシングテープを貼り合せた後に、前記フィルム状接着剤と前記ウェハとを同時にダイシングすることにより接着剤付き半導体素子を得る工程と、前記接着剤付き半導体素子をダイシングテープから剥がし被着体である配線基板とダイアタッチする工程とを含むことを特徴とする方法である。また、本発明の半導体パッケージは、前記半導体パッケージの製造方法により得られるものである。   In the method of manufacturing a semiconductor package according to the present invention, the film-like adhesive is formed on the back surface of the wafer on which at least one semiconductor element is formed, and then the dicing tape is bonded to the surface of the film-like adhesive. A step of obtaining a semiconductor element with an adhesive by simultaneously dicing the film adhesive and the wafer, and a step of peeling the semiconductor element with an adhesive from a dicing tape and die attaching to a wiring substrate as an adherend. It is the method characterized by this. The semiconductor package of the present invention is obtained by the method for manufacturing a semiconductor package.

本発明によれば、空気の巻き込みや樹脂のはい上がり等の不良を十分に防止しつつ、半導体素子を配線基板に搭載することを可能とすると共に、半導体素子を配線基板に搭載することが可能な温度範囲を広げることを可能とするフィルム状接着剤、並びにそれを用いた半導体パッケージ及びその製造方法を提供することが可能となる。   According to the present invention, it is possible to mount a semiconductor element on a wiring board while sufficiently preventing defects such as air entrainment and resin rising, and it is possible to mount a semiconductor element on a wiring board. It is possible to provide a film-like adhesive capable of widening a wide temperature range, a semiconductor package using the same, and a method for manufacturing the same.

以下、本発明をその好適な実施形態に即して詳細に説明する。   Hereinafter, the present invention will be described in detail with reference to preferred embodiments thereof.

先ず、本発明のフィルム状接着剤について説明する。すなわち、本発明のフィルム状接着剤は、後述する接着剤組成物をフィルム状に成形してなるフィルム状接着剤である。そして、本発明のフィルム状接着剤は、室温から１０℃／分の昇温速度で昇温した場合における測定温度と溶融粘度との関係が以下説明する条件（i）及び（ii）を満たすものであることが必要である。なお、上記のような測定を行った場合における、本発明のフィルム状接着剤の温度に対する溶融粘度の関係を模式的に示したグラフを図１に示す。   First, the film adhesive of this invention is demonstrated. That is, the film adhesive of this invention is a film adhesive formed by shape | molding the adhesive composition mentioned later into a film form. The film adhesive of the present invention satisfies the conditions (i) and (ii) described below in relation to the measurement temperature and the melt viscosity when the temperature is increased from room temperature at a rate of temperature increase of 10 ° C./min. It is necessary to be. In addition, the graph which showed typically the relationship of the melt viscosity with respect to the temperature of the film adhesive of this invention at the time of performing the above measurements is shown in FIG.

本発明のフィルム状接着剤においては、以下の条件（i）：
（i）溶融粘度（η）が最低となる最低溶融粘度（ηｍｉｎ）が１０〜１０００Ｐａ・ｓの範囲内（好ましくは１００〜１０００Ｐａ・ｓの範囲内、より好ましくは１００〜５００Ｐａ・ｓの範囲内）にあること、を満たすことが必要である。最低溶融粘度が１０Ｐａ・ｓ未満では、接着剤が半導体素子側面から表面へはい上がる現象が発生し、配線基板上ワイヤーパッドまで流れ出し汚染するといった不具合が発生する。他方、最低溶融粘度が１０００Ｐａ・ｓを超えると、フィルム状接着剤が凹凸のある配線基板の面によく追従することができずに、凹凸の溝に空隙が発生する。 In the film adhesive of the present invention, the following condition (i):
(I) The minimum melt viscosity (η min ) at which the melt viscosity (η) is lowest is in the range of 10 to 1000 Pa · s (preferably in the range of 100 to 1000 Pa · s, more preferably in the range of 100 to 500 Pa · s. It is necessary to satisfy that When the minimum melt viscosity is less than 10 Pa · s, the phenomenon that the adhesive rushes from the side surface of the semiconductor element to the surface occurs, causing a problem that the adhesive flows out to the wire pad on the wiring board and is contaminated. On the other hand, when the minimum melt viscosity exceeds 1000 Pa · s, the film-like adhesive cannot follow the surface of the wiring board with the unevenness well, and voids are generated in the uneven groove.

本発明のフィルム状接着剤においては、以下の条件（ii）：
（ii）溶融粘度（η）が下記数式（Ｆ１）：
η ≦ ηｍｉｎ × １．１ 〔Ｐａ・ｓ〕 ・・・（Ｆ１）
で表される条件を満たす粘度安定温度領域に入る温度（Ｔ１）と前記粘度安定温度領域を出る温度（Ｔ２）とが下記数式（Ｆ２）及び（Ｆ３）：
７０ ≦ Ｔ１ ≦ １２０ 〔℃〕 ・・・（Ｆ２）
１０ ≦ Ｔ２ − Ｔ１ 〔℃〕 ・・・（Ｆ３）
で表される条件を満たすこと、を満たすことが必要である。本発明のフィルム状接着剤について上記のような測定を行った場合には、図１に示すように、先ずは温度の上昇に伴い溶融粘度が低くなるが、特定の溶融粘度に達した後には温度の上昇に対する溶融粘度の変化が小さくなって安定し、その後溶融粘度が最低となった後に、温度の上昇に対する溶融粘度の変化が徐々に大きくなり、温度の上昇に伴い溶融粘度が高くなる傾向にある。本明細書においては、このように温度の上昇に対する溶融粘度の変化が小さい温度領域のことを粘度安定温度領域といい、より具体的には、溶融粘度（η）が前記数式（Ｆ１）で表される条件を満たしている温度領域であり、且つこのような温度領域に入る温度（Ｔ１）とこのような温度領域を出る温度（Ｔ２）とが前記数式（Ｆ３）で表される条件を満たしている温度領域のことを粘度安定温度領域という。そして、このような粘度安定温度領域に入る温度（Ｔ１）が前記数式（Ｆ２）で表される条件を満たすことにより、すなわち、前記温度（Ｔ１）が７０〜１２０℃の範囲内にあることにより、半導体素子を配線基板に搭載することが可能な温度範囲を広くすることが可能となる。前記温度（Ｔ１）が７０℃未満では、フィルム状接着剤の硬化性が高すぎるため、温度の上昇に伴う粘度上昇が大きくなり、却って半導体素子を配線基板に搭載することが可能な温度範囲が狭くなり、他方、１２０℃を超えると、低温領域において半導体素子を配線基板に搭載した場合に空気の巻き込み等の不良が発生するため、半導体素子を配線基板に搭載することが可能な温度範囲が狭くなる。なお、半導体素子を配線基板に搭載することが可能な温度範囲をより広くするという観点から、前記（Ｔ２−Ｔ１）の値は、２０℃以上であることが好ましく、３０℃以上であることがより好ましい。 In the film adhesive of the present invention, the following condition (ii):
(Ii) The melt viscosity (η) is the following formula (F1):
η ≦ η min × 1.1 [Pa · s] (F1)
The temperature (T 1 ) that enters the viscosity stable temperature region that satisfies the condition represented by the following equation (F 2) and (F 3) are the temperatures that exit the viscosity stable temperature region (T 2 ):
70 ≦ T 1 ≦ 120 [° C.] (F2)
10 ≦ T 2 −T 1 [° C.] (F3)
It is necessary to satisfy the condition represented by When the above-described measurement is performed on the film adhesive of the present invention, as shown in FIG. 1, the melt viscosity first decreases as the temperature rises, but after reaching a specific melt viscosity, The change in melt viscosity with increasing temperature becomes small and stable, and then after the melt viscosity reaches its lowest level, the change in melt viscosity with increasing temperature gradually increases and the melt viscosity tends to increase with increasing temperature. It is in. In this specification, such a temperature region in which the change in melt viscosity with a rise in temperature is small is referred to as a viscosity stable temperature region, and more specifically, the melt viscosity (η) is represented by the formula (F1). The temperature range that satisfies the above-mentioned conditions, and the temperature (T 1 ) that enters such a temperature range and the temperature (T 2 ) that exits such a temperature range are represented by the above formula (F3) The temperature range that satisfies the above is called the viscosity stable temperature range. And when the temperature (T 1 ) entering such a viscosity stable temperature region satisfies the condition represented by the formula (F2), that is, the temperature (T 1 ) is in the range of 70 to 120 ° C. As a result, the temperature range in which the semiconductor element can be mounted on the wiring board can be widened. When the temperature (T 1 ) is less than 70 ° C., the curability of the film-like adhesive is too high, so that the increase in viscosity accompanying the increase in temperature is large, and on the contrary, the temperature range in which the semiconductor element can be mounted on the wiring board On the other hand, when the temperature exceeds 120 ° C., defects such as air entrainment occur when the semiconductor element is mounted on the wiring board in a low temperature region, so that the temperature range in which the semiconductor element can be mounted on the wiring board. Becomes narrower. The value of (T 2 −T 1 ) is preferably 20 ° C. or higher, and preferably 30 ° C. or higher, from the viewpoint of further widening the temperature range in which the semiconductor element can be mounted on the wiring board. It is more preferable.

本発明のフィルム状接着剤は、以下説明する接着剤組成物をフィルム状に成形してなるものである。そして、本発明にかかる接着剤組成物は、（Ａ）エポキシ樹脂、（Ｂ）シリカ、（Ｃ）エポキシ樹脂硬化剤及び（Ｄ）有機溶剤を含有するものである。   The film adhesive of the present invention is formed by molding an adhesive composition described below into a film. The adhesive composition according to the present invention contains (A) an epoxy resin, (B) silica, (C) an epoxy resin curing agent, and (D) an organic solvent.

本発明にかかる（Ａ）エポキシ樹脂としては、常温で固形であるエポキシ樹脂を適宜選択して用いることができる。このようなエポキシ樹脂の軟化点は、常温ではフィルム性を保持するための高粘度を保ちつつ、半導体素子を配線基板に搭載する温度領域では低粘度とするという観点から、５０〜１００℃の範囲であることが好ましく、６０〜７０℃の範囲であることがより好ましい。また、このようなエポキシ樹脂としては、フェノールノボラック型、オルソクレゾールノボラック型、ジシクロペンタジエン型、ビフェニル型、フルオレンビスフェノールＡ型、トリアジン型、ナフトール型、ナフタレンジオール型、トリフェニルメタン型、テトラフェニル型、ビスフェノールＡ型、ビスフェノールＦ型、ビスフェノールＡＤ型、ビスフェノールＳ型、トリメチロールメタン型が挙げられる。これらのエポキシ樹脂は、１種を単独で又は２種以上を組み合わせて使用することができる。   As the (A) epoxy resin according to the present invention, an epoxy resin that is solid at room temperature can be appropriately selected and used. The softening point of such an epoxy resin is in the range of 50 to 100 ° C. from the viewpoint of maintaining a high viscosity for maintaining film properties at room temperature and a low viscosity in a temperature range in which a semiconductor element is mounted on a wiring board. It is preferable that it is the range of 60-70 degreeC. In addition, such epoxy resins include phenol novolac type, orthocresol novolak type, dicyclopentadiene type, biphenyl type, fluorene bisphenol A type, triazine type, naphthol type, naphthalenediol type, triphenylmethane type, tetraphenyl type. Bisphenol A type, bisphenol F type, bisphenol AD type, bisphenol S type, and trimethylolmethane type. These epoxy resins can be used individually by 1 type or in combination of 2 or more types.

本発明にかかる（Ｂ）シリカとしては、特に限定されないが、破砕状や球状の溶融シリカ粉末が挙げられる。このようなシリカにより、得られるフィルム状接着剤の低吸水化や線膨張係数の低減を図ることができる。なお、得られるフィルム状接着剤の線膨張率の値が高いと配線基板との線膨張率の差が大きくなるため、これら被接着物との応力を抑制する効果が低く、パッケージクラックが発生しやすくなる傾向にある。   Although it does not specifically limit as (B) silica concerning this invention, A crushed and spherical fused silica powder is mentioned. Such silica makes it possible to reduce the water absorption and reduce the linear expansion coefficient of the obtained film adhesive. In addition, if the value of the coefficient of linear expansion of the obtained film adhesive is high, the difference in coefficient of linear expansion from the wiring board becomes large, so the effect of suppressing stress with these adherends is low, and package cracks occur. It tends to be easier.

また、このようなシリカは、高充填化ができ、しかも流動性が優れているという観点から、球状のものを用いることが好ましい。さらに、このような球状シリカの平均粒子径は３〜２０μｍの範囲であることが好ましい。粒径が３μｍ未満では、フィラーが凝集しやすくなるため樹脂バインダー中に分散しにくくなると共に、比表面積が大きくなるため樹脂との接触面積が大きくなるため、溶融粘度が上昇しやすくなる傾向にある。他方、粒径が２０μｍを超えると、ロールナイフコーター等の塗工機で薄型のフィルムを作製する際に、フィラーがきっかけとなりフィルム表面にスジが発生しやすくなる傾向にある。   In addition, it is preferable to use spherical silica from the viewpoint that it can be highly filled and has excellent fluidity. Furthermore, the average particle diameter of such spherical silica is preferably in the range of 3 to 20 μm. If the particle size is less than 3 μm, the filler is likely to aggregate, making it difficult to disperse in the resin binder, and since the specific surface area increases and the contact area with the resin increases, the melt viscosity tends to increase. . On the other hand, when the particle diameter exceeds 20 μm, when a thin film is produced with a coating machine such as a roll knife coater, the filler tends to cause a streak on the film surface.

このようなシリカの含有量は、本発明にかかる接着剤組成物中のシリカの含有比率が固形分換算で１０〜５０質量％の範囲内（好ましくは、２０〜４０質量％の範囲内）となる量であることが必要である。このようにシリカの含有量を調整することにより、得られるフィルム状接着剤の最低溶融粘度の値を調整することができる。シリカの含有比率が１０質量％未満では、最低溶融粘度の値は小さくなり、半導体素子表面やワイヤーパッドの汚染を引き起こし、他方、５０質量％を超えると、最低溶融粘度の値は大きくなり、配線基板の凹凸間に空隙が残りやすくなる。   The content of such silica is such that the content ratio of silica in the adhesive composition according to the present invention is within a range of 10 to 50% by mass (preferably within a range of 20 to 40% by mass) in terms of solid content. It is necessary to be an amount. Thus, the value of the minimum melt viscosity of the obtained film adhesive can be adjusted by adjusting the content of silica. When the content ratio of silica is less than 10% by mass, the value of the minimum melt viscosity becomes small, causing contamination of the surface of the semiconductor element and the wire pad. On the other hand, when the content exceeds 50% by mass, the value of the minimum melt viscosity becomes large and the wiring Air gaps easily remain between the irregularities of the substrate.

本発明にかかる（Ｃ）エポキシ樹脂硬化剤は、後述する（Ｄ）有機溶剤に対して耐性を有するものであれば、特に限定されない。ここで、（Ｄ）有機溶剤に対して耐性を有するとは、常温において（Ｄ）有機溶剤の不溶であることをいう。このようなエポキシ樹脂硬化剤が有機溶剤に対して耐性を有さないものである場合には、（Ａ）エポキシ樹脂、（Ｂ）シリカ、（Ｃ）エポキシ樹脂硬化剤及び（Ｄ）有機溶剤の混合ワニス状態にした際に、エポキシ樹脂硬化剤が（Ｄ）有機溶剤中へ溶解するため、（Ａ）エポキシ樹脂の硬化反応が進行し、ワニス粘度が著しく上昇してしまう。   The (C) epoxy resin hardening | curing agent concerning this invention will not be specifically limited if it has tolerance with respect to the (D) organic solvent mentioned later. Here, (D) having resistance to an organic solvent means that (D) the organic solvent is insoluble at room temperature. When such an epoxy resin curing agent is not resistant to an organic solvent, (A) an epoxy resin, (B) silica, (C) an epoxy resin curing agent, and (D) an organic solvent. When the mixed varnish is used, the epoxy resin curing agent is dissolved in the organic solvent (D), so that the curing reaction of the (A) epoxy resin proceeds and the varnish viscosity is remarkably increased.

また、このようなエポキシ樹脂硬化剤の融点は１５０℃以上であることが必要である。これは、融点がエポキシ樹脂の硬化反応開始点となるためである。すなわち、融点未満の温度では、硬化剤は固体のまま接着剤中に分散され安定に存在しているが、融点を越えると液体に状態変化し、（Ａ）エポキシ樹脂との硬化反応が進行するものと本発明者らは推察する。また、硬化剤の融点が高いほど、前記粘度安定温度領域が広がるという観点から、このようなエポキシ樹脂硬化剤の融点は１７０℃以上であることがより好ましい。   In addition, the melting point of such an epoxy resin curing agent needs to be 150 ° C. or higher. This is because the melting point is the starting point for the curing reaction of the epoxy resin. That is, at a temperature below the melting point, the curing agent is dispersed and stably present in the adhesive as a solid, but when it exceeds the melting point, it changes to a liquid state and (A) the curing reaction with the epoxy resin proceeds. The present inventors infer that. Moreover, it is more preferable that the melting point of such an epoxy resin curing agent is 170 ° C. or higher from the viewpoint that the higher the melting point of the curing agent is, the wider the viscosity stable temperature region is.

このようなエポキシ樹脂硬化剤としては、下記一般式（１）で表されるヒドラジド化合物が挙げられる。下記一般式（１）において、ｎは１〜１０の整数を表す。   Examples of such epoxy resin curing agents include hydrazide compounds represented by the following general formula (1). In the following general formula (1), n represents an integer of 1 to 10.

Figure 2009149727
Figure 2009149727

このようなヒドラジド化合物は融点が１５０〜１９０℃の範囲内にあり、後述する（Ｄ）有機溶剤にも不溶であるため、有機溶剤中でも安定して存在できる。このようなヒドラジド化合物の中でも、一般的にｎの数が大きくなるほど、融点も上昇し、有機溶剤にも溶けにくくなるという観点から、ｎの値が８の場合の化合物であるセバシン酸ジヒドラジド（融点：１９０℃）もしくは、ｎの値が１０の場合の化合物であるドデカン二酸ジヒドラジド（融点：１９０℃）又はこれらの混合物を用いることが好ましい。   Such a hydrazide compound has a melting point in the range of 150 to 190 ° C. and is insoluble in the organic solvent (D) described later, and therefore can exist stably in the organic solvent. Among such hydrazide compounds, in general, the larger the number of n, the higher the melting point and the difficulty of dissolving in organic solvents. From the viewpoint that the value of n is 8, sebacic acid dihydrazide (melting point) : 190 ° C.) or dodecanedioic acid dihydrazide (melting point: 190 ° C.) which is a compound when the value of n is 10, or a mixture thereof is preferably used.

本発明にかかる（Ｃ）エポキシ樹脂硬化剤の含有量は、特に限定されないが、前記（Ａ）エポキシ樹脂１００質量部（例えば、エポキシ樹脂当量２００に相当）に対して５〜３０質量部の範囲内であることが好ましく、１０〜２５質量部の範囲内であることがより好ましい。含有量が前記下限未満では、エポキシ基と反応する硬化剤量が不足するため、架橋点数が少なくなり、結果として耐熱性が不足しやすくなる傾向にあり、他方、前記上限を超えると、系中に硬化剤が残留し、硬化剤分子中に存在する窒素、硫黄、酸素等の部位が水分子と相互作用（水素結合）し、吸水性が高くなりやすい傾向にある。   Although content of (C) epoxy resin hardening | curing agent concerning this invention is not specifically limited, The range of 5-30 mass parts with respect to 100 mass parts (for example, equivalent to epoxy resin equivalent 200) of said (A) epoxy resin. It is preferably within the range, and more preferably within the range of 10 to 25 parts by mass. If the content is less than the lower limit, the amount of the curing agent that reacts with the epoxy group is insufficient, so that the number of cross-linking points tends to decrease, and as a result, heat resistance tends to be insufficient. On the other hand, if the upper limit is exceeded, The hardener remains on the surface, and nitrogen, sulfur, oxygen, and other sites present in the hardener molecule interact with water molecules (hydrogen bonding), and the water absorption tends to increase.

本発明にかかる（Ｄ）有機溶剤としては、トルエン、キシレン等の芳香族炭化水素、ＭＩＢＫやＭＥＫ等のケトン系溶剤、モノグライム、ジグライム等のエーテル系溶剤が挙げられる。   Examples of the organic solvent (D) according to the present invention include aromatic hydrocarbons such as toluene and xylene, ketone solvents such as MIBK and MEK, and ether solvents such as monoglyme and diglyme.

本発明にかかる接着剤組成物は、以上説明した（Ａ）エポキシ樹脂、（Ｂ）シリカ、（Ｃ）エポキシ樹脂硬化剤及び（Ｄ）有機溶剤を含有するものであるが、前記粘度安定温度領域をより広くするために、（Ｅ）粘度調整剤として界面活性剤を更に含有していてもよい。このような界面活性剤としては、樹脂組成物等の粘度を調整するために使用されるものであれば、特に制限されない。このような界面活性剤としては、できるだけ少量の添加量で粘度を調整できるものを用いることが好ましい。このような界面活性剤としては、例えば、ビックケミー・ジャパン社製のポリカルボン酸のアマイド系、変性ウレア系、ウレア変性ウレタン系、ウレア変性ポリアマイド系、ウレア変性ポリアマイド系等の界面活性剤が挙げられる。このような界面活性剤を用いる場合には、その含有量は（Ａ）エポキシ樹脂及び（Ｃ）エポキシ樹脂硬化剤の総量に対して、０．１〜４．０質量部の範囲内であることが好ましく、０．３〜１．０質量部の範囲内であることがより好ましい。含有量が前記下限未満では、粘度調整作用が働きにくくなる傾向にあり、他方、前記上限を超えると、接着性低下や吸水率の上昇といった組成物性能への影響が生じやすくなる傾向にある。   The adhesive composition according to the present invention contains the above-described (A) epoxy resin, (B) silica, (C) epoxy resin curing agent, and (D) an organic solvent. In order to further increase the viscosity, (E) a surfactant may be further contained as a viscosity modifier. Such a surfactant is not particularly limited as long as it is used for adjusting the viscosity of a resin composition or the like. As such a surfactant, it is preferable to use a surfactant whose viscosity can be adjusted with the smallest possible addition amount. Examples of such surfactants include surfactants such as amides, modified ureas, urea-modified urethanes, urea-modified polyamides, and urea-modified polyamides manufactured by Big Chemie Japan. . When such a surfactant is used, the content thereof is within the range of 0.1 to 4.0 parts by mass with respect to the total amount of (A) epoxy resin and (C) epoxy resin curing agent. Is preferable, and it is more preferable to be within the range of 0.3 to 1.0 part by mass. If the content is less than the lower limit, the viscosity adjusting action tends to be difficult to work. On the other hand, if the content exceeds the upper limit, effects on the composition performance such as a decrease in adhesiveness and an increase in water absorption rate tend to occur.

本発明にかかる接着剤組成物は、必要に応じて、カップリング剤、酸化防止剤、難燃剤、着色剤等の他の添加剤；ブタジエン系ゴムやシリコーンゴム等の応力緩和剤を更に含有していてもよい。このようなカップリング剤は、前記（Ｂ）シリカとの界面を補強し高い破壊強度を発現させると共に接着力の向上を図ることができるという点で好ましい。また、このようなカップリング剤としては、アミノ基、エポキシ基を含有したものが好ましい。   The adhesive composition according to the present invention further contains, as necessary, other additives such as a coupling agent, an antioxidant, a flame retardant, and a colorant; a stress relaxation agent such as butadiene rubber and silicone rubber. It may be. Such a coupling agent is preferable in that it can reinforce the interface with the silica (B) to exhibit high breaking strength and improve adhesive strength. Moreover, as such a coupling agent, the thing containing an amino group and an epoxy group is preferable.

本発明のフィルム状接着剤は、以上説明した接着剤組成物をフィルム状に成形してなるものである。より具体的には、前記接着剤組成物を、離型処理されたＰＰ、ＰＥ、ＰＥＴ等の基材（保護フィルム）に、ロールナイフコーター、グラビアコーター、ダイコーター、リバースコーター等の公知の方法に従って塗工し、前記接着剤組成物の硬化開始温度以下の熱処理を施して乾燥することにより、本発明のフィルム状接着剤を得られる。このようにして形成されるフィルム状接着剤の厚みは、１０〜１５０μｍの範囲であることが好ましい。   The film adhesive of the present invention is formed by forming the above-described adhesive composition into a film. More specifically, known methods such as a roll knife coater, a gravure coater, a die coater, and a reverse coater are applied to a release-treated base material (protective film) such as PP, PE, and PET. The film-like adhesive of the present invention can be obtained by applying a heat treatment at a temperature not higher than the curing start temperature of the adhesive composition and drying. The thickness of the film adhesive thus formed is preferably in the range of 10 to 150 μm.

次に、本発明の半導体パッケージ及びその製造方法について説明する。すなわち、本発明の半導体パッケージの製造方法は、少なくとも一つの半導体素子が形成されたウェハの裏面に前記フィルム状接着剤を形成し、その後前記フィルム状接着剤の表面にダイシングテープを貼り合せた後に、前記フィルム状接着剤と前記ウェハとを同時にダイシングすることにより接着剤付き半導体素子を得る工程（接着剤付き半導体素子の作製工程）と、前記接着剤付き半導体素子をダイシングテープから剥がし被着体である配線基板とダイアタッチする工程（ダイアタッチ工程）とを含むことを特徴とする方法である。また、本発明の半導体パッケージは、前記半導体パッケージの製造方法により得られるものである。   Next, the semiconductor package and the manufacturing method thereof according to the present invention will be described. That is, in the method for manufacturing a semiconductor package of the present invention, the film-like adhesive is formed on the back surface of the wafer on which at least one semiconductor element is formed, and then a dicing tape is bonded to the surface of the film-like adhesive. , A step of obtaining a semiconductor element with an adhesive by simultaneously dicing the film adhesive and the wafer (a manufacturing step of a semiconductor element with an adhesive), and peeling the semiconductor element with an adhesive from a dicing tape A wiring board and a die attaching step (die attaching step). The semiconductor package of the present invention is obtained by the method for manufacturing a semiconductor package.

以下、図２を参照しながら本発明の半導体パッケージの製造方法についてより詳細に説明する。図２は、本発明の半導体パッケージの製造方法の好適な一実施形態を説明するための模式工程図である。   Hereinafter, the semiconductor package manufacturing method of the present invention will be described in more detail with reference to FIG. FIG. 2 is a schematic process diagram for explaining a preferred embodiment of a method for producing a semiconductor package of the present invention.

本発明の半導体パッケージの製造方法においては、先ず、シリコンウェハ１の一方の面に本発明のフィルム状接着剤２を貼り付けた後（図２（ａ）及び（ｂ）参照）、ダイシングテープ３を下地にしてシリコンウェハ１とフィルム状接着剤２を切断して（図２（ｃ）参照）、接着剤付き半導体素子１０を得る（接着剤付き半導体素子の作製工程）。次いで、接着剤付き半導体素子１０をダイシングテープ３から剥がし（図２（ｄ）参照）、被着体である配線基板４に搭載し、加熱することにより組成物中のエポキシ樹脂を硬化させ、半導体素子と配線基板とを熱圧着を行う（ダイアタッチ工程、図２（ｅ）参照）。このような熱圧着における加熱温度は、８０〜１８０℃の範囲内であればよいが、７０〜１２０℃の範囲内とすることが好ましい。また、このような熱圧着における加熱時間は１〜１８０分間の範囲内とすることが好ましい。このようなダイアタッチ工程により、エポキシ樹脂が硬化し、半導体素子と配線基板とを強固に接着できる。その後、ボンディングワイヤー５により配線基板４とシリコンウェハ１とを接続した後（図２（ｆ）参照）、封止樹脂６により樹脂封止することにより（図２（ｇ）参照）、本発明の半導体パッケージを製造することができる。   In the method for manufacturing a semiconductor package of the present invention, first, the film adhesive 2 of the present invention is attached to one surface of a silicon wafer 1 (see FIGS. 2A and 2B), and then a dicing tape 3 is used. The silicon wafer 1 and the film adhesive 2 are cut using the substrate as a base (see FIG. 2C) to obtain a semiconductor element 10 with an adhesive (manufacturing process of a semiconductor element with an adhesive). Next, the adhesive-attached semiconductor element 10 is peeled off from the dicing tape 3 (see FIG. 2D), mounted on the wiring substrate 4 as an adherend, and heated to cure the epoxy resin in the composition. The element and the wiring board are subjected to thermocompression bonding (a die attach step, see FIG. 2E). Although the heating temperature in such thermocompression bonding should just be in the range of 80-180 degreeC, it is preferable to set it in the range of 70-120 degreeC. In addition, the heating time in such thermocompression bonding is preferably in the range of 1 to 180 minutes. By such a die attach process, the epoxy resin is cured, and the semiconductor element and the wiring board can be firmly bonded. Then, after connecting the wiring board 4 and the silicon wafer 1 with the bonding wire 5 (see FIG. 2 (f)), the resin is sealed with the sealing resin 6 (see FIG. 2 (g)). A semiconductor package can be manufactured.

以下、実施例及び比較例に基づいて本発明をより具体的に説明するが、本発明は以下の実施例に限定されるものではない。なお、以下の実施例及び比較例において、溶融粘度及びダイアタッチ可能温度領域はそれぞれ以下の方法により測定又は評価した。   EXAMPLES Hereinafter, although this invention is demonstrated more concretely based on an Example and a comparative example, this invention is not limited to a following example. In the following Examples and Comparative Examples, melt viscosity and die attachable temperature range were measured or evaluated by the following methods, respectively.

（i）溶融粘度
熱硬化前のフィルム状接着剤を２．５ｃｍ×２．５ｃｍの大きさに切り取り、真空ラミネーター装置（名機製作所社製、商品名「ＭＶＬＰ−５００」）で温度５０℃、圧力０．３ＭＰａ、貼り合わせ時間１０秒間の条件で、厚みが３００μｍとなるように貼り合わせて試料を得た。得られた試料について、溶融粘度測定装置（ＨＡＡＫＥ社製、商品名「レオストレスＲＳ−１５０」）を用い、昇温速度１０℃／分にて温度２０〜２００℃の範囲における溶融粘度の変化を測定した。得られた温度−粘度曲線から、先ず、最低溶融粘度（ηｍｉｎ）を読み取り、次に、溶融粘度（η）が下記数式（Ｆ１）：
η ≦ ηｍｉｎ × １．１ ・・・（Ｆ１）
で表される条件を満たしている温度範囲を「粘度安定温度範囲」として読み取った。そして、前記粘度安定温度範囲に入る温度（Ｔ１）、並びに前記粘度安定温度範囲に入った後に硬化反応に伴い粘度上昇開始したときの温度、すなわち、前記粘度安定温度領域を出る温度（Ｔ２）を温度−粘度曲線から読み取り、その後、（Ｔ２−Ｔ１）の値を算出した。 (I) Melt viscosity The film-like adhesive before thermosetting is cut into a size of 2.5 cm × 2.5 cm, and the temperature is 50 ° C. using a vacuum laminator (trade name “MVLP-500”, manufactured by Meiki Seisakusho Co., Ltd.) A sample was obtained by bonding so that the thickness was 300 μm under the conditions of a pressure of 0.3 MPa and a bonding time of 10 seconds. About the obtained sample, the change of the melt viscosity in the temperature range of 20-200 degreeC is used at the temperature increase rate of 10 degree-C / min using melt viscosity measuring apparatus (The product name "Rheostress RS-150" by HAAKE Corporation). It was measured. First, the minimum melt viscosity (η min ) is read from the obtained temperature-viscosity curve, and then the melt viscosity (η) is expressed by the following formula (F1):
η ≦ η min × 1.1 (F1)
The temperature range satisfying the condition represented by is read as “viscosity stable temperature range”. Then, the temperature (T 1 ) that falls within the viscosity stable temperature range, and the temperature when the viscosity starts to increase with the curing reaction after entering the viscosity stable temperature range, that is, the temperature that exits the viscosity stable temperature range (T 2). ) Was read from the temperature-viscosity curve, and then the value of (T 2 -T 1 ) was calculated.

（ii）ダイアタッチ可能温度領域
先ず、マニュアルラミネーター（テクノビジョン社製、商品名「ＦＭ−１１４」）を使用して、熱硬化前のフィルム状接着剤をシリコンダミーウェハに貼り付け、更にダイシングテープを貼り付けた。次に、ダイシング装置（ディスコ社製、商品名「ＤＦＤ３８０」）を使用して、８ｍｍ×８ｍｍの大きさの接着剤付き半導体素子に個片化した。次いで、ダイボンダー装置（日立社製、商品名「ＰＢ−１５０」）を使用して、ステージ温度を変えて個片化した接着剤付き半導体素子をガラス基板にダイアタッチして試料を得た。得られた試料を光学顕微鏡にて観察することによりダイアタッチ性を評価した。すなわち、ガラス基板側から光学顕微鏡にて観察して５０μｍサイズ以下のボイドがなく、また半導体素子側から光学顕微鏡にて観察してチップ表面に樹脂のはい上がりがない場合をダイアタッチ性が良好と判定した。そして、ステージ温度を変えてダイアタッチした試料について上記項目をそれぞれ評価し、ダイアタッチ性が良好な温度領域を測定した。なお、ダイアタッチ性が良好な温度領域が３０℃以上である場合を「○」と判定し、１０℃以上で３０℃未満である場合を「△」と判定し、１０℃以下である場合を「×」と判定した。 (Ii) Die attachable temperature region First, using a manual laminator (trade name “FM-114” manufactured by Technovision), a film-like adhesive before thermosetting is attached to a silicon dummy wafer, and then a dicing tape. Was pasted. Next, using a dicing machine (trade name “DFD380” manufactured by Disco Corporation), the semiconductor element with an adhesive having a size of 8 mm × 8 mm was separated into pieces. Next, using a die bonder device (trade name “PB-150” manufactured by Hitachi, Ltd.), the semiconductor element with an adhesive separated into pieces by changing the stage temperature was die-attached to a glass substrate to obtain a sample. The die attachability was evaluated by observing the obtained sample with an optical microscope. That is, when there is no void of 50 μm or less when observed with an optical microscope from the glass substrate side, and when the resin surface does not rise on the chip surface when observed with an optical microscope from the semiconductor element side, the die attachability is good. Judged. And the said item was each evaluated about the sample die-attached by changing stage temperature, and the temperature area | region where die-attachment property was favorable was measured. The case where the temperature range where the die attachability is good is 30 ° C. or higher is determined as “◯”, the case where it is 10 ° C. or higher and lower than 30 ° C. is determined as “Δ”, and the case where it is 10 ° C. or lower It was determined as “x”.

（実施例１）
ＸＤ−１０００（ジシクロペンタジエン型エポキシ樹脂、軟化点：約７０℃、日本化薬社製）６０ｇ、ＹＰ−５０Ｓ（フェノキシ樹脂、軟化点：約１００℃、東都化成社製）２０ｇ、エピコート８２８（ビスフェノールＡ型エポキシ樹脂、東都化成社製）４４ｇ、７０ｇのＭＩＢＫ（メチルイソブチルケトン）をそれぞれ秤量し、５００ｍｌのセパラブルフラスコ中、温度１１０℃で２時間加熱攪拌して樹脂ワニスを得た。得られた樹脂ワニス１８７ｇを８００ｍｌのプラネタリーミキサーに秤量し、ＦＢ−３ＳＤＸ（球状シリカ、平均粒径：３μｍ、デンカ社製）７８ｇを加えて混合したものを３本ロールで混練した。得られた混練物に、ＳＤＨ（セバシン酸ジヒドラジド、日本ファインケム製）２７ｇ、を加えてプラネタリーミキサーで攪拌混合後、真空脱泡して接着剤組成物を得た。得られた接着剤組成物を厚み５０μｍの離型処理されたＰＥＴフィルム上に塗布後、温度８０℃で１０分間、温度１５０℃で１分間熱風乾燥させ、厚み３０μｍのフィルム状接着剤を得た。 Example 1
60 g of XD-1000 (dicyclopentadiene type epoxy resin, softening point: about 70 ° C., manufactured by Nippon Kayaku Co., Ltd.), 20 g of YP-50S (phenoxy resin, softening point: about 100 ° C., manufactured by Tohto Kasei Co., Ltd.), Epicoat 828 ( Bisphenol A type epoxy resin (manufactured by Tohto Kasei Co., Ltd.) 44 g and 70 g of MIBK (methyl isobutyl ketone) were weighed and heated and stirred at a temperature of 110 ° C. for 2 hours in a 500 ml separable flask to obtain a resin varnish. 187 g of the obtained resin varnish was weighed in an 800 ml planetary mixer, and 78 g of FB-3SDX (spherical silica, average particle size: 3 μm, manufactured by Denka Co., Ltd.) and mixed were kneaded with three rolls. To the obtained kneaded product, 27 g of SDH (sebacate dihydrazide, manufactured by Nippon Finechem) was added, stirred and mixed with a planetary mixer, and then vacuum degassed to obtain an adhesive composition. The obtained adhesive composition was applied on a 50 μm thick release-treated PET film and then dried with hot air at a temperature of 80 ° C. for 10 minutes and at a temperature of 150 ° C. for 1 minute to obtain a film adhesive having a thickness of 30 μm. .

（実施例２）
ＳＤＨに代えてＮ−１２（ドデカン二酸ジヒドラジド、日本ファインケム製）３４ｇを用いた以外は実施例１と同様にしてフィルム状接着剤を得た。 (Example 2)
A film adhesive was obtained in the same manner as in Example 1 except that 34 g of N-12 (dodecanedioic acid dihydrazide, manufactured by Nippon Finechem) was used instead of SDH.

（実施例３）
ＸＤ−１０００に代えてＮＣ−３０００−Ｈ（ビフェニル型エポキシ樹脂、日本化薬製）６０ｇを用いた以外は実施例２と同様にしてフィルム状接着剤を得た。 (Example 3)
A film adhesive was obtained in the same manner as in Example 2 except that 60 g of NC-3000-H (biphenyl type epoxy resin, Nippon Kayaku) was used instead of XD-1000.

（実施例４）
球状シリカＦＢ−３ＳＤＸの添加量を１５５ｇとした以外は実施例２と同様にしてフィルム状接着剤を得た。 Example 4
A film adhesive was obtained in the same manner as in Example 2 except that the amount of spherical silica FB-3SDX added was 155 g.

（実施例５）
ＸＤ−１０００（ジシクロペンタジエン型エポキシ樹脂、軟化点：約７０℃、日本化薬社製）６０ｇ、ＹＰ−５０Ｓ（フェノキシ樹脂、軟化点：約１００℃、東都化成社製）２０ｇ、エピコート８２８（ビスフェノールＡ型エポキシ樹脂、東都化成社製）４４ｇ、７０ｇのＭＩＢＫ（メチルイソブチルケトン）をそれぞれ秤量し、５００ｍｌのセパラブルフラスコ中、温度１１０℃で２時間加熱攪拌して樹脂ワニスを得た。得られた樹脂ワニス１８７ｇを８００ｍｌのプラネタリーミキサーに秤量し、ＦＢ−３ＳＤＸ（球状シリカ、平均粒径：３μｍ、デンカ社製）７８ｇを加えて混合したものを３本ロールで混練した。得られた混練物に、ＡＨ−１５０（ジシアンジアミド、味の素社製）６ｇ、ＨＸ−３７２２（マイクロカプセル型イミダゾール系潜在性硬化剤、旭化成エポキシ（株）製）２ｇ、粘度調整剤としてＢＹＫ−４０５（ポリヒドロキシカルボン酸アミド溶液型粘度調整剤、ビックケミー・ジャパン社製）１５ｇを加えてプラネタリーミキサーで攪拌混合後、真空脱泡して接着剤組成物を得た。得られた接着剤組成物を厚み５０μｍの離型処理されたＰＥＴフィルム上に塗布後、温度８０℃で１０分間、温度１５０℃で１分間熱風乾燥させ、厚み３０μｍのフィルム状接着剤を得た。 (Example 5)
60 g of XD-1000 (dicyclopentadiene type epoxy resin, softening point: about 70 ° C., manufactured by Nippon Kayaku Co., Ltd.), 20 g of YP-50S (phenoxy resin, softening point: about 100 ° C., manufactured by Tohto Kasei Co., Ltd.), Epicoat 828 ( Bisphenol A type epoxy resin (manufactured by Tohto Kasei Co., Ltd.) 44 g and 70 g of MIBK (methyl isobutyl ketone) were weighed and heated and stirred at a temperature of 110 ° C. for 2 hours in a 500 ml separable flask to obtain a resin varnish. 187 g of the obtained resin varnish was weighed in an 800 ml planetary mixer, and 78 g of FB-3SDX (spherical silica, average particle size: 3 μm, manufactured by Denka Co., Ltd.) and mixed were kneaded with three rolls. In the obtained kneaded material, 6 g of AH-150 (Dicyandiamide, manufactured by Ajinomoto Co., Inc.), 2 g of HX-3722 (Microcapsule type imidazole-based latent curing agent, manufactured by Asahi Kasei Epoxy Co., Ltd.), and BYK-405 ( 15 g of a polyhydroxycarboxylic acid amide solution type viscosity modifier (manufactured by Big Chemie Japan) was added and stirred and mixed with a planetary mixer, followed by vacuum defoaming to obtain an adhesive composition. The obtained adhesive composition was applied on a 50 μm thick release-treated PET film and then dried with hot air at a temperature of 80 ° C. for 10 minutes and at a temperature of 150 ° C. for 1 minute to obtain a film adhesive having a thickness of 30 μm. .

（比較例１）
粘度調整剤ＢＹＫ−４０５を使用しなかった以外は実施例５と同様にしてフィルム状接着剤を得た。 (Comparative Example 1)
A film adhesive was obtained in the same manner as in Example 5 except that the viscosity modifier BYK-405 was not used.

（比較例２）
球状シリカＦＢ−３ＳＤＸ及び粘度調整剤ＢＹＫ−４０５を使用しなかった以外は実施例５と同様にしてフィルム状接着剤を得た。 (Comparative Example 2)
A film adhesive was obtained in the same manner as in Example 5 except that the spherical silica FB-3SDX and the viscosity modifier BYK-405 were not used.

（比較例３）
球状シリカＦＢ−３ＳＤＸの添加量を３４０ｇとした以外は実施例２と同様にしてフィルム状接着剤を得た。 (Comparative Example 3)
A film adhesive was obtained in the same manner as in Example 2 except that the amount of spherical silica FB-3SDX added was 340 g.

（比較例４）
ＳＤＨに代えて２ＭＡ（イミダゾール系硬化剤、四国化成社製）５ｇ用いた以外は実施例１と同様にしてフィルム状接着剤を得た。 (Comparative Example 4)
A film adhesive was obtained in the same manner as in Example 1 except that 5 g of 2MA (imidazole-based curing agent, manufactured by Shikoku Kasei Co., Ltd.) was used instead of SDH.

＜溶融粘度及びダイアタッチ可能温度領域の評価＞
実施例１〜５及び比較例１〜４で得られたフィルム状接着剤について、溶融粘度（最低溶融粘度（ηｍｉｎ）、粘度安定温度範囲に入る温度（Ｔ１）、粘度安定温度領域を出る温度（Ｔ２）、及び（Ｔ２−Ｔ１）の値）及びダイアタッチ可能温度領域を、上記の方法で評価した。得られた結果を表１に示す。また、実施例１〜５及び比較例１〜４で得られたフィルム状接着剤における配合組成を表１に示す。 <Evaluation of melt viscosity and die attachable temperature range>
About the film-like adhesives obtained in Examples 1 to 5 and Comparative Examples 1 to 4, the melt viscosity (minimum melt viscosity (η min ), temperature entering the viscosity stable temperature range (T 1 ), exiting the viscosity stable temperature range Temperature (T 2 ) and (T 2 −T 1 )) and the temperature range where die attach is possible were evaluated by the above-described methods. The obtained results are shown in Table 1. Moreover, the compounding composition in the film adhesive obtained in Examples 1-5 and Comparative Examples 1-4 is shown in Table 1.

Figure 2009149727
Figure 2009149727

表１に示した結果から明らかなように、本発明のフィルム状接着剤を用いた場合（実施例１〜５）は、ダイアタッチ可能温度領域が広いことが確認された。   As is clear from the results shown in Table 1, it was confirmed that when the film adhesive of the present invention was used (Examples 1 to 5), the temperature range in which die attachment was possible was wide.

以上説明したように、本発明によれば、空気の巻き込みや樹脂のはい上がり等の不良を十分に防止しつつ、半導体素子を配線基板に搭載することを可能とすると共に、半導体素子を配線基板に搭載することが可能な温度範囲を広げることを可能とするフィルム状接着剤、並びにそれを用いた半導体パッケージ及びその製造方法を提供することが可能となる。   As described above, according to the present invention, it is possible to mount a semiconductor element on a wiring board while sufficiently preventing defects such as air entrainment and resin rising, and the semiconductor element can be mounted on the wiring board. It is possible to provide a film-like adhesive that makes it possible to expand the temperature range that can be mounted on the semiconductor package, a semiconductor package using the same, and a method of manufacturing the same.

本発明のフィルム状接着剤の温度に対する溶融粘度の関係を模式的に示したグラフである。It is the graph which showed typically the relationship of the melt viscosity with respect to the temperature of the film adhesive of this invention. 本発明の半導体パッケージの製造方法の一実施形態を示す模式工程図である。It is a schematic process drawing which shows one Embodiment of the manufacturing method of the semiconductor package of this invention.

符号の説明Explanation of symbols

１…シリコンウェハ、２…フィルム状接着剤、３…ダイシングテープ、４…配線基板、５…ボンディングワイヤー、６…封止樹脂、１０…接着剤付き半導体素子。   DESCRIPTION OF SYMBOLS 1 ... Silicon wafer, 2 ... Film adhesive, 3 ... Dicing tape, 4 ... Wiring board, 5 ... Bonding wire, 6 ... Sealing resin, 10 ... Semiconductor element with adhesive agent.

Claims (6)

接着剤組成物をフィルム状に成形してなるフィルム状接着剤であって、
前記接着剤組成物が、（Ａ）エポキシ樹脂、（Ｂ）シリカ、（Ｃ）エポキシ樹脂硬化剤及び（Ｄ）有機溶剤を含有するものであり、前記接着剤組成物中の前記（Ｂ）シリカの含有比率が固形分換算で１０〜５０質量％の範囲内にあり、前記（Ｃ）エポキシ樹脂硬化剤が前記（Ｄ）有機溶剤に対する耐性及び１５０℃以上の融点を有するものであり、且つ、
前記フィルム状接着剤が、室温から１０℃／分の昇温速度で昇温した場合における測定温度と溶融粘度との関係が下記条件（i）及び（ii）：
（i）溶融粘度（η）が最低となる最低溶融粘度（ηｍｉｎ）が１０〜１０００Ｐａ・ｓの範囲内にあること、
（ii）溶融粘度（η）が下記数式（Ｆ１）：
η ≦ ηｍｉｎ × １．１ 〔Ｐａ・ｓ〕 ・・・（Ｆ１）
で表される条件を満たす粘度安定温度領域に入る温度（Ｔ１）と前記粘度安定温度領域を出る温度（Ｔ２）とが下記数式（Ｆ２）及び（Ｆ３）：
７０ ≦ Ｔ１ ≦ １２０ 〔℃〕 ・・・（Ｆ２）
１０ ≦ Ｔ２ − Ｔ１ 〔℃〕 ・・・（Ｆ３）
で表される条件を満たすこと、
を満たすものであることを特徴とするフィルム状接着剤。 It is a film adhesive formed by forming an adhesive composition into a film,
The adhesive composition contains (A) an epoxy resin, (B) silica, (C) an epoxy resin curing agent, and (D) an organic solvent, and the (B) silica in the adhesive composition The content ratio is in the range of 10 to 50% by mass in terms of solid content, the (C) epoxy resin curing agent has a resistance to the (D) organic solvent and a melting point of 150 ° C. or higher, and
When the film adhesive is heated from room temperature at a temperature rising rate of 10 ° C./min, the relationship between the measurement temperature and the melt viscosity is the following conditions (i) and (ii):
(I) The minimum melt viscosity (η min ) at which the melt viscosity (η) is lowest is in the range of 10 to 1000 Pa · s,
(Ii) The melt viscosity (η) is the following formula (F1):
η ≦ η min × 1.1 [Pa · s] (F1)
The temperature (T 1 ) that enters the viscosity stable temperature region that satisfies the condition represented by the following equation (F 2) and (F 3) are the temperatures that exit the viscosity stable temperature region (T 2 ):
70 ≦ T 1 ≦ 120 [° C.] (F2)
10 ≦ T 2 −T 1 [° C.] (F3)
Satisfying the condition represented by
A film-like adhesive characterized by satisfying 前記（Ｃ）エポキシ樹脂硬化剤が下記一般式（１）：
Figure 2009149727
 （式（１）中、ｎは１〜１０の整数を表す。）
で表されるヒドラジド化合物であることを特徴とする請求項１に記載のフィルム状接着剤。 The (C) epoxy resin curing agent is represented by the following general formula (1):
Figure 2009149727
 (In formula (1), n represents an integer of 1 to 10)
The film adhesive according to claim 1, which is a hydrazide compound represented by the formula: 前記接着剤組成物が（Ｅ）粘度調整剤として界面活性剤を更に含有することを特徴とする請求項１又は２に記載のフィルム状接着剤。   The film adhesive according to claim 1 or 2, wherein the adhesive composition further contains a surfactant as (E) a viscosity modifier. 前記フィルム状接着剤の厚みが１０〜１５０μｍの範囲であることを特徴とする請求項１〜３のうちのいずれか一項に記載のフィルム状接着剤。   The thickness of the said film adhesive is the range of 10-150 micrometers, The film adhesive as described in any one of Claims 1-3 characterized by the above-mentioned. 少なくとも一つの半導体素子が形成されたウェハの裏面に請求項１〜４のうちのいずれか一項に記載のフィルム状接着剤を形成し、その後前記フィルム状接着剤の表面にダイシングテープを貼り合せた後に、前記フィルム状接着剤と前記ウェハとを同時にダイシングすることにより接着剤付き半導体素子を得る工程と、前記接着剤付き半導体素子をダイシングテープから剥がし被着体である配線基板とダイアタッチする工程とを含むことを特徴とする半導体パッケージの製造方法。   The film adhesive according to any one of claims 1 to 4 is formed on the back surface of the wafer on which at least one semiconductor element is formed, and then a dicing tape is bonded to the surface of the film adhesive. After that, the step of obtaining a semiconductor element with an adhesive by simultaneously dicing the film adhesive and the wafer, and removing the semiconductor element with an adhesive from a dicing tape and die-attaching to a wiring substrate as an adherend. A process for producing a semiconductor package, comprising: 請求項５に記載の半導体パッケージの製造方法により得られるものであることを特徴とする半導体パッケージ。   A semiconductor package obtained by the method for manufacturing a semiconductor package according to claim 5.
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