KR20190017961A - Adhesive film, tape for semiconductor wafer processing, semiconductor package and manufacturing method thereof - Google Patents

Abstract

An adhesive film comprising an adhesive layer containing a thermosetting resin, a thermoplastic resin and a heat-conducting filler,
Wherein the thermally conductive filler has a thermal conductivity of 12 W / m · K or more and a content in the adhesive layer of 30 to 50% by volume, the thermoplastic resin contains at least one phenoxy resin, ,
And to the reliability coefficient S2 10~120 (× 10 ^-8 GPa) which is calculated by the following equation (1) the reliability coefficient S1 is 50~220 (× 10 ^-6 GPa), and Equation (2), as calculated by the formula,
An adhesive film having a thermal conductivity of 0.5 W / m · K or more, a tape for processing a semiconductor wafer, a semiconductor package, and a manufacturing method thereof.
S1 = (Tg-25 [占 폚] 占 (CTE? 1 [ppm / K]) 占 (storage modulus E '[GPa] (One)
S2 = S1 x (saturation absorption WA [mass%]) ... (2)
In the equations (1) and (2), S1, S2, Tg, CTE alpha 1, storage elastic modulus E 'and saturated water absorption WA are for the cured adhesive layer. Tg is the glass transition temperature, CTE? 1 is the coefficient of linear expansion at or below its glass transition temperature, and storage elastic modulus E 'is the value measured at 260 占 폚. In addition, [] indicates unit.

Description

Adhesive film, tape for semiconductor wafer processing, semiconductor package and manufacturing method thereof

The present invention relates to an adhesive film, a tape for processing semiconductor wafers, a semiconductor package, and a manufacturing method thereof.

2. Description of the Related Art In recent years, miniaturization, high functionality, and multi-functionalization of electronic devices have been progressing. Semiconductor packages mounted therein have become more sophisticated and versatile, and miniaturization of semiconductor wafer wiring rules is progressing. With the increase in functionality and versatility, a stacked MCP (Multi Chip Package) in which semiconductor chips are stacked in multiple stages and has a high capacity has been popularized. A method of mounting a semiconductor chip directly on a substrate or a semiconductor chip (FOD (Film on Device) mounting and a method of embedding and mounting a semiconductor chip or wire already mounted on a substrate (FOW (Film on Wire) ]. A semiconductor package (FOW packaging) of a wire embedded type is a semiconductor package in which an adhesive, which is an inherent driver, is pressed against a semiconductor chip to which wires are connected and the wire is covered with an adhesive, and is mounted on a memory package for portable telephones and portable audio devices.

As the data processing speed of the semiconductor device progresses as described above, the amount of heat generated from the semiconductor chip increases, and the importance of designing the semiconductor device having heat dissipation is increasing. Heat adversely affects not only the semiconductor device itself but also the electronic apparatus main body incorporating it. There are various ways to cope with packages for heat dissipation, but the most important thing is heat dissipation through a substrate such as a printed board or a lead frame.

Therefore, conventionally, an adhesive having high thermal conductivity may be used for bonding the substrate and the semiconductor chip. As such an adhesive, silver paste having a relatively high thermal conductivity and a sheet-like adhesive film (die bond film) proposed recently have been known (see, for example, Patent Document 1).

Among them, the sheet-like adhesive film can suppress cracking of the chips, the entanglement of the adhesive, and the inclination of the chips, but the thermal conductivity is lower than that of the silver paste.

Japanese Patent Application Laid-Open No. 2008-218571

Among semiconductor packages and semiconductor devices, high-frequency devices (RF devices) are particularly problematic in heat dissipation because they generate a large amount of heat. On the other hand, semiconductor packages and semiconductor devices such as high-frequency devices are required to have reliability that satisfies Moisture Sensitivity Levels (MSL) 1 of the moisture absorption reflow test (semiconductor heat resistance test).

In addition, MSL1 is a level specification prescribed by IPC / JEDEC (Joint Electronic Equipment Technical Committee).

However, in the conventional adhesive film, the adhesion to the lead frame is not high, peeling may occur between the adhesive film and the lead frame, and it is important to achieve a higher level of reliability of the semiconductor package as described above.

It is therefore an object of the present invention to provide an adhesive film which is made in consideration of the above circumstances and which has high heat dissipation property and which is highly reliable in semiconductor package and a tape for semiconductor wafer processing having excellent semiconductor processability, And a method of manufacturing the same.

As a result of intensive studies, the present inventors have found that a phenoxy resin of a thermoplastic resin is used in addition to a thermally conductive filler and a thermosetting resin having a thermal conductivity of 12 W / m · K or more, The above problems could be solved by satisfying the expansion coefficient and the storage elastic modulus E 'at 260 캜, in particular, including saturated water absorption, in a specific relationship.

That is, it is found that the above-described problem is achieved by the following arrangement.

(1) An adhesive film comprising an adhesive layer containing a thermosetting resin, a thermoplastic resin and a heat-conducting filler,

Wherein the thermally conductive filler has a thermal conductivity of 12 W / m · K or more and a content in the adhesive layer of 30 to 50% by volume, the thermoplastic resin contains at least one phenoxy resin, ,

The reliability coefficient S1 calculated by the following equation (1) is 50 to 220 (x 10 ^-6 GPa)

The reliability coefficient S2 calculated by the following formula (2) is 10 to 120 (x 10 < ^-8 GPa)

And a thermal conductivity of 0.5 W / m · K or more.

S1 = (Tg-25 [占 폚] 占 (CTE? 1 [ppm / K]) 占 (storage modulus E '[GPa] (One)

S2 = S1 x (saturation absorption WA [mass%]) ... (2)

In the equations (1) and (2), S1, S2, Tg, CTE alpha 1, storage elastic modulus E 'and saturated water absorption WA are for the cured adhesive layer. Tg is the glass transition temperature, CTE? 1 is the coefficient of linear expansion at or below its glass transition temperature, and storage elastic modulus E 'is the value measured at 260 占 폚. In addition, [] indicates units.

(2) The adhesive film according to (1), wherein the phenoxy resin has a glass transition temperature (Tg) of -50 to 50 캜 and a mass average molecular weight of 10,000 to 100,000.

(3) The adhesive film according to (1) or (2), wherein the phenoxy resin has a repeating unit represented by the following formula (I).

In the general formula (I), L ^a represents a single bond or a divalent linking group, and R ^a1 and R ^a2 each independently represent a substituent. ma and na each independently represent an integer of 0 to 4; X represents an alkylene group, and nb represents an integer of 1 to 10.

(4) The adhesive film according to any one of (1) to (3), wherein the thermosetting resin is an epoxy resin.

(5) The adhesive film according to any one of (1) to (4), wherein the heat conduction filler is at least one selected from alumina and aluminum nitride.

(6) The adhesive film according to any one of (1) to (5), wherein the adhesive film contains a phenol resin as a curing agent.

(7) The adhesive film according to any one of (1) to (6), which contains a phosphonium salt compound as a curing accelerator.

(8) A tape for semiconductor wafer processing, characterized in that it has a pressure-sensitive adhesive layer on a base film, and the pressure-sensitive adhesive layer has the adhesive film described in any one of (1) to (7).

(9) A semiconductor package using the adhesive film according to any one of (1) to (7).

(10) A semiconductor chip having an adhesive layer formed by bonding an adhesive layer of the adhesive film described in any one of (1) to (7) to a back surface of a semiconductor chip on which at least one semiconductor circuit is formed, A first step of thermocompression bonding the wiring board through the adhesive layer,

A second step of thermally curing the adhesive layer,

Wherein the semiconductor package is formed of a conductive material.

According to the present invention, it is made possible to provide a semiconductor package using a bonding film, a semiconductor wafer processing tape, an adhesive film thereof, or a semiconductor wafer processing tape having a high heat dissipation property and a highly reliable semiconductor package and a manufacturing method thereof.

Further, the semiconductor wafer processing tape of the present invention has an adhesive film having high heat dissipation property and high reliability of the semiconductor package, and in addition to these performances, the semiconductor processability is excellent.

These and other features and advantages of the present invention will become more apparent from the following description.

<< Adhesive film >>

The adhesive film of the present invention comprises at least an adhesive layer containing a thermosetting resin, a thermoplastic resin and a heat conductive filler, wherein the adhesive layer after curing satisfies a specific reliability coefficient range and has a thermal conductivity of 0.5 W / m · K or more.

In the present invention, the adhesive film is a film-like adhesive (hereinafter also referred to simply as an adhesive or an adhesive layer), and may be a single film of the adhesive layer or a film having an adhesive layer on a release film .

&Lt; Component of adhesive layer >

The adhesive film (adhesive layer) of the present invention contains at least a thermosetting resin, a thermoplastic resin and a heat-conducting filler, and particularly preferably contains a curing agent and a curing accelerator.

(Thermoplastic resin)

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, - polyamide resins such as nylon and 6,6-nylon, phenoxy resins, acrylic resins, polyester resins such as polyethylene terephthalate and polybutylene terephthalate, polyamideimide resins and fluororesins. These thermoplastic resins may be used alone or in combination of two or more.

In the present invention, among these thermoplastic resins, at least one phenoxy resin is used. Phenoxy resins are preferable because they have high heat resistance, a small saturation absorption rate, and ensure reliability of semiconductor packages. The phenoxy resin has good compatibility with the epoxy resin because of its similar structure to the epoxy resin, low melt viscosity of the resin, and good adhesiveness.

The phenoxy resin can be obtained by a reaction between a bisphenol or a biphenol compound and an epihalohydrin such as epichlorohydrin, or a reaction between a liquid epoxy resin and a bisphenol or a biphenol compound.

In any reaction, as the bisphenol or biphenol compound, a compound represented by the following general formula (A) is preferable.

In the general formula (A), L ^a represents a single bond or a divalent linking group, and R ^a1 and R ^a2 each independently represent a substituent. ma and na each independently represent an integer of 0 to 4;

In L ^a , the divalent linking group is preferably an alkylene group, a phenylene group, -O-, -S-, -SO-, -SO ₂ - or a group in which an alkylene group and a phenylene group are combined.

The number of carbon atoms in the alkylene group is preferably from 1 to 10, more preferably from 1 to 6, still more preferably from 1 to 3, particularly preferably 1 or 2, and most preferably 1.

The alkylene group is preferably -C (R ^? ) (R ^? ) -, wherein R ^? And R &lt; ³ &^gt; each independently represent a hydrogen atom, an alkyl group or an aryl group. R ^? And R ^{? May} combine with each other to form a ring. R ^? And R ^{? Are} each independently preferably a hydrogen atom or an alkyl group (e.g., methyl, ethyl, isopropyl, n-propyl, n-butyl, isobutyl, hexyl, octyl or 2-ethylhexyl). The alkylene group, particularly _{-CH 2 -, -CH (CH 3} ), -C (CH 3) 2 - are preferred, and _{-CH 2 -, -CH (CH 3} ) , and is more preferably, -CH ₂ - Is more preferable.

The phenylene group preferably has 6 to 12 carbon atoms, more preferably 6 to 8 carbon atoms, and still more preferably 6 carbon atoms. The phenylene group includes, for example, p-phenylene, m-phenylene and o-phenylene, and p-phenylene and m-phenylene are preferable.

The group alkylene group and phenylene group in combination, an alkylene-phenylene-alkylene groups are preferred, and, ^{-C (R α) (R β} ) - phenylene ^{-C (R α) (R β} ) - more preferably Do.

The ring formed by combining R ^? And R ^? Is preferably a 5- or 6-membered ring, more preferably a cyclopentane ring or a cyclohexane ring, and still more preferably a cyclohexane ring.

L ^a is preferably a single bond or an alkylene group, -O- or -SO ₂ -, and more preferably an alkylene group.

In R ^a1 and R ^a2 , the substituent is preferably an alkyl group, an aryl group, an alkoxy group, an alkylthio group or a halogen atom, more preferably an alkyl group, an aryl group or a halogen atom, and further preferably an alkyl group.

ma and na are preferably 0 to 2, more preferably 0 or 1, and still more preferably 0.

Examples of the bisphenol or biphenol compound include bisphenol A, bisphenol AD, bisphenol AP, bisphenol AF, bisphenol B, bisphenol BP, bisphenol C, bisphenol E, bisphenol F, bisphenol G, bisphenol M, bisphenol S, bisphenol P, Bisphenol PH, bisphenol TMC, bisphenol Z, 4,4'-biphenol, 2,2'-dimethyl-4,4'-biphenol, 2,2 ', 6,6'-tetramethyl- Bisphenol A, bisphenol AD, bisphenol C, bisphenol E, bisphenol F and 4,4'-biphenol are preferable, and bisphenol A, bisphenol E and bisphenol F are more preferable, bisphenol F Is particularly preferable.

On the other hand, as the liquid epoxy resin, a diglycidyl ether of an aliphatic diol compound is preferable, and a compound represented by the following general formula (B) is more preferable.

In the general formula (B), X represents an alkylene group, and nb represents an integer of 1 to 10.

The alkylene group preferably has 2 to 10 carbon atoms, more preferably 2 to 8 carbon atoms, still more preferably 3 to 8 carbon atoms, particularly preferably 4 to 6 carbon atoms, and most preferably 6 carbon atoms.

For example, ethylene, propylene, butylene, pentylene, hexylene, and octylene. Ethylene, trimethylene, tetramethylene, pentamethylene, heptamethylene, hexamethylene and octamethylene are preferable.

nb is preferably 1 to 6, more preferably 1 to 3, and even more preferably 1.

When nb is 2 to 10, X is preferably ethylene or propylene, and more preferably ethylene.

Examples of the aliphatic diol compound in the diglycidyl ether include ethylene glycol, propylene glycol, diethylene glycol, triethylene glycol, polyethylene glycol, 1,3-propanediol, 1,4-butanediol, 1,6-hexanediol, 1,7-pentanediol, and 1,8-octanediol.

In the above reaction, the phenoxy resin obtained by the reaction of the bisphenol or the biphenol compound or the aliphatic diol compound alone may be a phenoxy resin obtained by reacting two or more kinds thereof. For example, there can be mentioned the reaction of a diglycidyl ether of 1,6-hexanediol with a mixture of bisphenol A and bisphenol F. [

In the present invention, the phenoxy resin is preferably a phenoxy resin obtained by reacting a liquid epoxy resin with a bisphenol or a biphenol compound, more preferably a phenoxy resin having a repeating unit represented by the following general formula (I) .

In the formula (I) L ^a, R ^a1, R ^a2, ma and na is, a formula L ^a, R ^a1, R ^a2, ma and na and agreement (同義) in (A), a preferred The range is the same. X and nb are synonymous with X and nb in the general formula (B), and preferable ranges are also the same.

In the present invention, among these, a polymer of bisphenol F and diglycidyl ether of 1,6-hexanediol is preferable.

The weight average molecular weight of the phenoxy resin is preferably 10,000 or more, more preferably 10,000 to 100,000.

In addition, although the epoxy group is slightly retained, the epoxy equivalent is preferably 5,000 g / eq or more.

Here, the mass average molecular weight is a value determined by GPC (Gel Permeation Chromatography) in terms of polystyrene conversion.

The glass transition temperature (Tg) of the phenoxy resin is preferably less than 100 DEG C, more preferably less than 80 DEG C, and particularly preferably in the range of -50 DEG C to 50 DEG C, desirable.

The phenoxy resin may be synthesized as described above, or a commercially available product may be used. Examples of commercially available products include commercially available products such as YX7180 (trade name: bisphenol F + 1, 6-hexanediol diglycidyl ether type phenoxy resin, manufactured by Mitsubishi Chemical Corporation), 1256 (trade name: bisphenol A type Phenoxy resin, manufactured by Mitsubishi Chemical Corporation), YP-70 (trade name: bisphenol A / F phenoxy resin, manufactured by NIPPON STEEL & SUMIKIN CHEMICAL CO., LTD.), FX (Trade name: bisphenol F type phenoxy resin, manufactured by Shinnika Epoxy K.K.) and FX-280S (trade name: cardo skeleton type phenoxy resin, manufactured by Shinnika Epoxy K.K.), 4250 Trade name: bisphenol A / bisphenol F mixed phenoxy resin, manufactured by Mitsubishi Chemical Corporation).

The content of the thermoplastic resin is preferably from 10 to 500 parts by mass, more preferably from 30 to 450 parts by mass, and still more preferably from 60 to 400 parts by mass, per 100 parts by mass of the thermosetting resin (in particular, epoxy resin). By setting the content in such a range, the rigidity and flexibility of the adhesive film before curing can be adjusted.

(Thermosetting resin)

As the thermosetting resin, an epoxy resin, a phenol resin, a urea resin, a melamine resin, an unsaturated polyester resin, a silicone resin and a polyurethane resin are known, but in the present invention, an epoxy resin is particularly preferable.

The epoxy resin may be either liquid, solid or semi-solid. The term &quot; liquid &quot; means a liquid having a softening point of less than 50 deg. C, and a solid means a liquid having a softening point of at least 60 deg. It says. The epoxy resin used in the present invention preferably has a softening point of 100 占 폚 or less from the viewpoint that a pressure-sensitive adhesive layer capable of reaching a low melt viscosity at a favorable temperature range (for example, 60 to 120 占 폚) can be obtained. In the present invention, the softening point is a value measured by a softening point test (circular ball method) (measurement conditions: according to JIS-2817).

From the viewpoint that the cross-linking density of the cured product in the epoxy resin used in the present invention becomes high and consequently a higher thermal conductivity is obtained by increasing the contact probability between the fillers to be compounded and the contact area, the epoxy equivalent is 600 g / eq, more preferably 150 to 550 g / eq, even more preferably 150 to 450 g / eq, particularly preferably 150 to 300 g / eq, and most preferably 150 to 200 g / eq. In the present invention, the epoxy equivalent means the number of grams (g / eq) of the resin containing one gram equivalent of an epoxy group.

The molecular weight or mass average molecular weight of the epoxy resin is preferably less than 3,000, more preferably 150 or more and less than 3,000, still more preferably 200 to 2,000, particularly preferably 200 to 1,000, and most preferably 300 to 600.

Here, the mass average molecular weight is a value determined by GPC (Gel Permeation Chromatography) in terms of polystyrene conversion.

Examples of the skeleton of the epoxy resin include phenol novolak type, orthocresol novolac type, cresol novolak type, dicyclopentadiene type, biphenyl type, fluorene bisphenol type, triazine type, naphthol type, naphthalene diol type, Methane type, tetraphenyl type, bisphenol A type, bisphenol F type, bisphenol AD type, bisphenol S type, trimethylol methane type, dimeric acid type and the like. Of these, triphenylmethane type, bisphenol A type, bisphenol F type, cresol novolak type, and orthocresol novolak type are preferred from the viewpoint of obtaining an adhesive layer having a low crystallinity of resin and good appearance. , And triphenylmethane type, bisphenol A type, and bisphenol F type are more preferable, and triphenylmethane type and bisphenol A type are preferable.

The epoxy resin may be used singly or in combination of two or more kinds.

The content of the epoxy resin is preferably 1 to 20 parts by mass, more preferably 4 to 10 parts by mass, relative to 100 parts by mass of the total mass of components constituting the adhesive film. By setting to such a range, it is possible to suppress the generation of a resin component having a high crosslinking density, in which the crosslinking density becomes a preferable range when curing and the thermal conductivity is hardly improved, and furthermore, the film state (film tackiness ) And the like) can be suppressed from being generated.

(Hardener and curing accelerator)

In the present invention, it is particularly preferable to use a curing agent or a curing accelerator in order to thermally cure the epoxy resin.

Examples of the curing agent or curing accelerator for thermosetting an epoxy resin include dicyandiamide resins, boron trifluoride complexes, organic hydrazide compounds, amines, polyamide resins, imidazole compounds, urea or thiourea compounds, poly A phenol resin, a photo-ultraviolet curing agent, a phosphorus-based curing accelerator (such as a phosphonium salt compound) such as a mercaptane compound, a polysulfide resin having a mercapto group at the end, an acid anhydride, .

Among them, examples of boron trifluoride complexes include boron trifluoride-amine complexes with various amine compounds (preferably, primary amine compounds), and examples of the organic hydrazide compounds include isophthalic acid dihydrazide have.

Examples of the amines include chain aliphatic amine compounds such as diethylenetriamine, triethylenetetramine, hexamethylenediamine, N, N-dimethylpropylamine, benzyldimethylamine, 2- (dimethylamino) phenol, 2,4,6-tris (Dimethylaminomethyl) phenol and m-xylenediamine), cyclic aliphatic amine compounds (N-aminoethylpiperazine, bis (3-methyl-4- aminocyclohexyl) methane, bis (Piperazine, N, N-dimethylpiperazine, triethylenediamine, melamine, guanamine and the like), aromatic compounds such as benzenesulfonic acid, Amine compounds (such as m-phenylenediamine, 4,4'-diaminodiphenylmethane, diamino, 4,4'-diaminodiphenylsulfone and the like), polyamide resins (polyamide amines are preferable and dimer acids and polyamines Condensate).

Examples of the imidazole compound include 2-phenyl-4,5-dihydroxymethylimidazole, 2-methylimidazole, 2,4-dimethylimidazole, 2-n-heptadecylimidazole, Nonyl-2-undecyl imidazolium trimellitate, epoxy imidazole adduct, complex compound of an imidazole compound and an aromatic polycarboxylic acid compound, and the like.

Examples of the urea or thio urea compound include N, N-dialkyl urea compounds and N, N-dialkyl thiourea compounds.

Examples of the acid anhydride include tetrahydrophthalic anhydride, phthalic anhydride, trimellitic anhydride, and filamentous anhydrous acid.

Examples of curing catalyst complex-type polyhydric phenols include novolac phenol resin, phenol aralkyl phenol resin, polyvinyl phenol resin and cresol phenolic resin.

Examples of the photo-UV curing agent include diphenyliodonium hexafluorophosphate, triphenylsulfonium hexafluorophosphate, and the like.

As the phosphorus-based curing accelerator, tetraphenylphosphonium tetraphenylborate (trade name: TPP-K), tetraphenylphosphonium tetra-p-triborate (trade name: TPP-MK), triphenylphosphine triphenylborane ; TPP-S), and the like (all of which are manufactured by HOKKO CHEMICAL INDUSTRY CO., LTD.). Among them, tetraphenylphosphonium tetraphenylborate and tetraphenylphosphonium tetra-p-triborate are preferable from the viewpoint of good storage stability at room temperature because of their excellent potential.

In the present invention, as the curing agent, a curing catalyst complex-type polyhydric phenol is preferable, and a hydroxyl group equivalent is preferably 100 to 150 g / eq.

In the present invention, the hydroxyl group equivalent means the number of grams (g / eq) of the resin containing one gram equivalent of a hydroxyl group.

Of the curing catalyst complex-type polyhydric phenols, in the present invention, a novolak type phenol resin is preferable, and a cresol novolak type phenol resin is more preferable.

As the curing accelerator, a phosphorus-based curing catalyst or an encapsulated imidazole is preferable from the viewpoint that the latent property is excellent and the reliability of the adhesive film can be maintained for a long time.

In the present invention, the curing accelerator is particularly preferably a phosphorus-boron curing accelerator, and tetraphenylphosphonium tetraphenylborate is most preferable.

The content of the curing agent or the curing accelerator in the adhesive layer is not particularly limited, and the optimum content differs depending on the kind of the curing agent or the curing accelerator.

The content of the curing agent is preferably 0.5 to 80 parts by mass, more preferably 1 to 70 parts by mass, per 100 parts by mass of the epoxy resin.

The content of the curing accelerator is preferably less than the content of the curing agent, and is preferably 0.1 to 50 parts by mass, more preferably 0.5 to 20 parts by mass, further preferably 1 to 15 parts by mass, per 100 parts by mass of the curing agent.

(Heat conduction filler)

In the present invention, the adhesive layer contains at least one heat conduction filler having a thermal conductivity of 12 W / mK or more.

When the thermal conductivity of the heat-conducting filler is less than 12 W / m 占 K, more heat-conducting fillers are mixed to obtain the desired thermal conductivity, and as a result, the melt viscosity of the adhesive film is increased, The unevenness of the substrate can not be filled, and the adhesion is lowered.

(Thermal conductivity: 36 W / m 占)), aluminum nitride particles (thermal conductivity: 150 to 290 W / m 占 K), boron nitride particles (thermal conductivity: 60 W / m 占)), zinc oxide particles (thermal conductivity: 54 W / m 占 K), silicon nitride filler (thermal conductivity: 27 W / m 占)), silicon carbide particles And at least one filler selected from the group consisting of magnesium particles (thermal conductivity: 59 W / mK) is preferable. Particularly, alumina particles have a high thermal conductivity and are preferable from the viewpoints of dispersibility and availability. It is preferable that the aluminum nitride particles and the boron nitride particles have higher thermal conductivity than alumina particles. In the present invention, among them, alumina particles and aluminum nitride particles are preferable.

The aluminum nitride particles contribute to high thermal conductivity and reduction of linear expansion coefficient.

The aluminum nitride particles are hydrolyzed by contact with water in the powder state to easily generate ammonium ions. However, by using a phenol resin having a low moisture absorption rate as a curing agent for an epoxy resin, can do.

The heat conduction filler may be subjected to surface treatment or surface modification. Examples of the surface treatment or surface modification include a silane coupling agent, a phosphoric acid or a phosphoric acid compound, and a surfactant.

For example, the method of treating the heat-conducting filler with a silane coupling agent is not particularly limited, and a wet method in which a thermal conductive filler and a silane coupling agent are mixed in a solvent, a dry method in which a thermal conductive particle and a silane coupling agent are treated in a gas phase, An integral method in which a silane coupling agent is mixed with a thermoplastic resin which is a binder resin in advance.

In the case of aluminum nitride particles, it is preferable that the aluminum nitride particles are surface-modified to inhibit hydrolysis. As a method for modifying the surface of aluminum nitride, a method of improving the water resistance by providing an oxide layer of aluminum oxide on the surface layer and performing the surface treatment with phosphoric acid or phosphoric acid compound and improving the affinity with the resin is particularly preferable.

(H ₃ PO ₄ ), pyrroleic acid (H ₄ P ₂ O ₇ ), metaphosphoric acid ((HPO ₃ ) _n , and n is a condensation product) are used in the surface treatment with respect to the heat- Or a metal salt thereof). Examples of the phosphoric acid compound include organic phosphoric acid such as alkylphosphonic acid, arylphosphonic acid, alkylphosphoric acid and arylphosphoric acid (for example, methylphosphonic acid, ethylphosphonic acid, hexylphosphonic acid, vinylphosphonic acid, phenylphosphonic acid, Phosphoric acid, hexyl phosphoric acid).

It is also preferable to surface-treat the surface of the heat-conducting filler with a silane coupling agent.

It is also preferable to use an ion trap agent in combination.

The silane coupling agent is a compound in which at least one hydrolyzable group such as an alkoxy group and an aryloxy group is bonded to a silicon atom, and an alkyl group, an alkenyl group or an aryl group may be bonded thereto. The alkyl group is preferably an amino group, an alkoxy group, an epoxy group, or a (meth) acryloyloxy group substituted with an amino group (preferably a phenylamino group), an alkoxy group (preferably a glycidyloxy group) It is more preferable that the iodine group is substituted.

The silane coupling agent includes, for example, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropyltriethoxysilane, 3-glycidyloxypropylmethyldimethoxysilane, 3-glycidyloxypropylmethyldiethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, phenyltrimethoxy Silane, phenyltriethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 3-methacryloyloxypropylmethyldimethoxysilane, 3-methacryloyloxypropyltrimethoxysilane, 3- 3-methacryloyloxypropyltriethoxysilane, and the like can be given.

The surfactant (dispersant) may be anionic, cationic or non-anionic, and may be a polymer compound.

In the present invention, an anionic surfactant is preferable, and a phosphate ester surfactant is more preferable.

As the phosphate ester surfactant, those commercially available as the phosphanol series manufactured by TOHO Chemical Industry Co., Ltd. may be used. For example, there can be mentioned phosphapol RS-410, 610, 710, phosphanol RL-310, phosphanol RA-600, phosphanol ML-200, 220, 240 and phosphanol GF-199 .

The silane coupling agent and the surfactant are preferably contained in an amount of 0.1 to 2.0 parts by mass based on 100 parts by mass of the heat conduction filler.

The shape of the heat conduction filler is not particularly limited and may be, for example, a flake shape, a needle shape, a filament shape, a spherical shape or a scaly shape, Spherical particles are preferable in that the contact area between the conductive particles and the resin can be reduced and the fluidity at 120 to 130 캜 can be increased.

The average particle diameter is preferably 0.01 to 5 mu m, more preferably 0.1 to 5 mu m. By setting the average particle diameter in such a range, the uniformity of the film thickness of the adhesive layer can be maintained without causing spots or streaks when the pressure-sensitive adhesive layer is provided without aggregation between the pillars.

In the present invention, the average particle diameter refers to the particle diameter when 50% of the total volume of the particles is taken as 100% in the particle size distribution, and the particle diameter is measured by a laser diffraction / scattering method (measurement conditions: Hexametaphosphate sodium, laser wavelength: 780 nm, measuring apparatus: Microtrack MT3300EX). Further, in the present invention, the sphere shape means a sphere or a substantially spherical sphere having a substantially rounded corners.

In the present invention, the content of the heat conduction filler is 30 to 50% by volume with respect to the total volume of the adhesive layer. With such a range, the semiconductor package manufactured using the adhesive film is excellent in heat dissipation, excellent in stress relaxation property, and can mitigate the internal stress occurring in the semiconductor package at the time of thermal change, It is possible to make it difficult to cause peeling off.

If the content of the heat conductive filler is less than 30% by volume, the thermal conductivity of the adhesive layer is lowered, and the heat radiation effect from the semiconductor package is weakened. When the content of the heat conduction filler is more than 50% by volume, the stress relaxation property is inferior, and it becomes difficult to alleviate the internal stress occurring in the semiconductor package at the time of the heat change, and peeling from the adherend is apt to occur.

The lower limit of the content of the heat conduction filler is preferably 35% by volume or more, and more preferably 40% by volume or more. The content of the heat conduction filler with respect to the total volume of the adhesive layer is calculated from the addition amount and the specific gravity of each component constituting the adhesive layer.

(Other additives)

In the present invention, it is preferable that the adhesive layer contains a curing agent and a curing accelerator in addition to a thermoplastic resin, a thermosetting resin and a heat conduction filler. In addition, in addition to these, a viscosity adjusting agent, , A flame retardant, a colorant, a stress relieving agent such as a butadiene rubber or a silicone rubber.

(Content of resin component)

In the present invention, at least a thermoplastic resin and a thermosetting resin are contained, but the content of the resin component containing the thermoplastic resin in the adhesive layer is preferably 50 vol% or more. The upper limit of the content of the resin component in the adhesive layer is preferably 70% by volume or less, more preferably 65% by volume or less, and still more preferably 60% by volume or less.

The blending ratio of the thermosetting resin relative to 100 parts by mass of the total amount of the thermosetting resin and the thermoplastic resin is not particularly limited as long as the adhesive film (adhesive layer) exerts the function as a thermosetting type when heated under predetermined conditions, It is preferably in the range of 10 to 80 parts by mass and more preferably in the range of 20 to 70 parts by mass because the fluidity at 120 to 130 占 폚 can be increased.

On the other hand, the compounding ratio of the thermoplastic resin is preferably in the range of 20 to 90 parts by mass from the viewpoint of improving the fluidity at 120 to 130 占 폚 with respect to 100 parts by mass of the total amount of the thermosetting resin and the thermoplastic resin, And more preferably 30 to 80 parts by mass.

(The thickness of the adhesive film (adhesive layer)

The thickness of the adhesive film is preferably 5 to 200 mu m, and more preferably 10 to 40 mu m from the viewpoint that the wiring board and the surface of the semiconductor chip can be sufficiently filled with irregularities. By setting the thickness within the above range, it is possible to sufficiently fill the unevenness of the surface of the wiring board and the semiconductor chip to secure sufficient adhesiveness, to easily remove the organic solvent, to reduce the residual solvent amount, It does not happen.

<Release film>

The releasing film is a releasing film which functions as a cover film of an adhesive film (adhesive layer) and is peeled off when an adhesive layer as an adhesive film is adhered to an adherend, and is used for the purpose of improving the handling property of the adhesive film do.

The mold release process may be any process, but is typically a silicon process.

Examples of the release film include a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film, a polymethylpentene film, a polyvinyl chloride film, a vinyl chloride copolymer film, a polyethylene terephthalate film, a polyethylene naphthalate film, (Meth) acrylic acid copolymer film, an ethylene / (meth) acrylic acid ester copolymer film, a polystyrene film, a polycarbonate film, a polyethylene terephthalate film, a polyurethane film, an ethylene / vinyl acetate copolymer film, an ionomer resin film, , A polyimide film, and a fluororesin film. These crosslinked films are also used. These films may be laminated films.

Of these, polyethylene subjected to release treatment, polypropylene subjected to release treatment, polyethylene terephthalate subjected to release treatment are preferable, and polyethylene terephthalate subjected to release treatment is particularly preferable.

The surface tension of the release film is preferably 40 mN / m or less, more preferably 35 mN / m or less.

The film thickness of the release film is usually 5 to 300 占 퐉, preferably 10 to 200 占 퐉, and particularly preferably 20 to 150 占 퐉.

&Lt; Characteristics of adhesive film (adhesive layer) >

In the adhesive film (adhesive layer) of the present invention, the adhesive layer after the heat curing (hereinafter simply referred to as after hardening), that is, the cured product exhibits the following characteristics.

The cured product of the adhesive layer was measured for a cured product which was heat-treated at 180 占 폚 for 1 hour.

(Reliability coefficient)

In the present invention, the cured adhesive layer preferably has a reliability coefficient S1 calculated by the following equation (1) is 50 to 220 (x 10 ^-6 GPa), a reliability coefficient S2 calculated by the following equation (2) 120 (占 10 ^-8 GPa).

S1 = (Tg-25 [占 폚] 占 (CTE? 1 [ppm / K]) 占 (storage modulus E '[GPa] (One)

S2 = S1 x (saturation absorption WA [mass%]) ... (2)

In the equations (1) and (2), S1, S2, Tg, CTE alpha 1, storage elastic modulus E 'and saturated water absorption WA are for the cured adhesive layer. Tg is the glass transition temperature, CTE? 1 is the coefficient of linear expansion at or below its glass transition temperature, and storage elastic modulus E 'is the value measured at 260 占 폚. In addition, [] indicates unit.

Here, the reliability coefficients S1 and S2 include a heating process at 260 deg. C, which is similar to the moisture absorption process and the reflow process, and determines whether or not peeling between the chip and the substrate of the semiconductor package due to deformation or moisture evaporation due to temperature change To evaluate.

Below the glass transition temperature (Tg) of the cured adhesive layer, deformation occurs due to temperature change, and distortion occurs. The deformation amount due to the temperature change is calculated by (Tg-25 [DEG C]) x (CTE alpha 1 [ppm]) in the above equation (1).

At a glass transition temperature (Tg) or more, deformation can be alleviated because of the rubbery state.

When the storage elastic modulus E 'at 260 占 폚 is small, the modulus of elasticity at room temperature (25 占 폚) to 260 占 폚 is excellent in mitigating the distortion by internal stress.

The reliability coefficient S1 is a relational expression obtained by adding the above.

On the other hand, the reliability coefficient S2 is a relational expression obtained by further increasing the occurrence of peeling at the interface of each adhesive layer in the interior of the semiconductor package due to evaporation of water in the heating process at 260 DEG C if the saturation absorption amount is large.

(Saturation absorption rate WA)

In the present invention, the saturated water absorption rate WA of the adhesive layer after curing is preferably 1.0% by mass or less, and more preferably 0.7% by mass or less. When the saturation absorption rate WA exceeds 1.0% by mass, in the reliability test including the moisture absorption process, when the semiconductor package is soldered by the reflow method, package cracks tend to occur easily due to explosive vaporization of moisture in the adhesive film have. The saturated water absorption rate WA can be calculated by measuring the mass after moisture absorption until saturated at a temperature of 85 DEG C and a relative humidity of 85% under the condition of the mass of the adhesive film after heat curing using a thermo-hygrostat have.

The saturated water absorption rate WA can be adjusted by changing the content ratio of the resin component and the heat conductive filler and the kind and content of the resin component.

(Glass transition temperature (Tg) of the adhesive layer after curing)

In the present invention, the glass transition temperature (Tg) of the adhesive layer after curing is preferably 80 DEG C or higher.

When the glass transition temperature (Tg) is 80 占 폚 or higher, it is possible to suppress a drastic change in physical properties in the normal temperature range of the semiconductor package and the temperature range of the thermal cycle reliability test, and suppress the increase in the saturation absorption rate WA can do. The glass transition temperature (Tg) of the adhesive layer after curing is more preferably 85 DEG C or higher, and still more preferably 100 DEG C or higher. On the other hand, the upper limit of the glass transition temperature (Tg) of the adhesive layer after curing is preferably 200 ° C or lower. If the temperature is 200 DEG C or less, distortion caused by temperature change can be suppressed. The upper limit of the glass transition temperature (Tg) of the adhesive layer after curing is more preferably 180 占 폚 or lower, still more preferably 150 占 폚 or lower.

The glass transition temperature (Tg) of the adhesive layer after curing can be controlled by changing the type and content of the resin component and the curing conditions.

(Storage elastic modulus E ')

In the present invention, the storage elastic modulus E 'at 260 ° C of the cured adhesive layer is preferably 1 GPa or less. When the storage elastic modulus E 'at 260 deg. C is 1 GPa or less, the stress relaxation property is excellent, and the internal stress occurring in the semiconductor device at the time of thermal change can be relaxed, and peeling from the adherend can be prevented. The lower limit of the storage elastic modulus E 'at 260 캜 is preferably 1 MPa or more. When the storage elastic modulus E 'at 260 캜 is 1 MPa or more, cohesive failure at high temperature is hardly caused, and resistance to reflow is excellent. The storage elastic modulus E 'at 260 캜 is more preferably at least 0.01 GPa.

The storage elastic modulus E 'can be controlled by changing the content ratio of the resin component and the heat conduction filler and the kind and content of the resin component.

(Linear expansion coefficient CTE alpha 1 at a glass transition temperature (Tg) or lower)

In the present invention, the linear expansion coefficient CTE alpha 1 at a temperature not higher than the glass transition temperature (Tg) of the cured adhesive layer is preferably 40 ppm / K or less. When the coefficient of linear expansion CTE alpha 1 at the glass transition temperature (Tg) or lower is 40 ppm / K or less, cohesive failure of the adhesive layer due to peeling stress generated at the time of heating can be prevented at the interface between the adhesive layer and the adherend . The lower limit of the linear expansion coefficient CTE alpha 1 at the glass transition temperature (Tg) or lower is preferably 5 ppm / K or more. When the coefficient of linear expansion CTE alpha 1 at the glass transition temperature (Tg) or lower is 5 ppm / K or more, the adhesive layer relaxes and absorbs the peeling stress generated at the time of heating at the adhesive interface between the adhesive layer and the adherend, Peeling can be prevented.

The linear expansion coefficient CTE alpha 1 at a glass transition temperature (Tg) or lower can be controlled by changing the type and content of the resin component.

(Thermal conductivity of the adhesive layer after curing)

In the present invention, the thermal conductivity of the adhesive layer after curing is 0.5 W / m · K or more, preferably 1.2 W / m · K or more, and more preferably 1.5 W / m · K or more. When the thermal conductivity of the adhesive layer after curing is 0.5 W / m · K or more, the semiconductor package manufactured using the adhesive film has excellent heat dissipation. The higher the thermal conductivity of the adhesive layer after curing is, the better, but the upper limit is practically, for example, 20 W / mK or less.

The thermal conductivity of the adhesive layer after curing can be controlled by changing the kind and content of the resin component, the kind and content of the heat conduction filler, and the like.

The coefficient of linear expansion CTE alpha 1 at a glass transition temperature (Tg), the glass transition temperature (Tg) or less, the storage elastic modulus E 'at 260 ° C, the saturated water absorption rate WA and the thermal conductivity of the adhesive layer after curing, .

<< Tape for semiconductor wafer processing and method of manufacturing the same >>

The adhesive film of the present invention may be used singly as the adhesive film of the present invention. However, it is also possible to use a pressure-sensitive adhesive layer on a base film, and an adhesive layer of the present invention Layer (hereinafter referred to as a &quot; dicing die-bonding film &quot;).

Hereinafter, a semiconductor wafer processing tape will be described.

(Substrate film)

As the material of the base film, those used in adhesive tapes for processing semiconductor wafers can be used, and examples thereof include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene, ethylene-vinyl acetate copolymer, Homopolymers or copolymers of? -Olefins such as ethylene copolymers, ester copolymers, ethylene-acrylic acid copolymers and ionomers, engineering plastics such as polyethylene terephthalate, polycarbonate and polymethyl methacrylate, polyurethanes, styrene- And pentene-based copolymers, and may be a mixture of two or more kinds selected from these groups.

In the present invention, a crosslinkable resin is preferable from the viewpoints of preservation and maintenance of the adhesive film and the semiconductor chip at the time of dicing and uniform expansion of the semiconductor chip at the time of picking up, and for example, an ethylene- (meth) Preferred is an ionomer obtained by crosslinking ethylene- (meth) acrylic acid- (meth) acrylic acid with a metal ion.

The base film may be a single-layer film or a base film in which two or more films are laminated.

The thickness of the base film is preferably 50 to 200 mu m.

(Pressure-sensitive adhesive layer)

The pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer is not particularly limited and may be, for example, a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive, a rubber pressure-sensitive adhesive or the like, or a radiation-curing pressure-sensitive adhesive which is cured by irradiation with ultraviolet radiation. The pressure-sensitive adhesive to be used for processing semiconductor wafers is preferably an acrylic pressure-sensitive adhesive.

In the present invention, a radiation-curable pressure-sensitive adhesive is preferable to a pressure-sensitive adhesive.

The radiation-curable pressure-sensitive adhesive may be any material as long as it has a radiation-curable functional group such as a carbon-carbon double bond and exhibits adhesiveness.

For example, as a radiation-curable pressure-sensitive adhesive or a base polymer in which a radiation-curable monomer component or an oligomer component is blended with a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive, a radiation having a carbon-carbon double bond at the side chain, Curable pressure sensitive adhesives. (Hereinafter, a polymer having a carbon-carbon double bond is referred to as a radiation-curable polymer) having a carbon-carbon double bond does not need to contain an oligomer component or the like as a low molecular component, It is preferable that the pressure-sensitive adhesive layer having a stable layer structure can be formed without moving the oligomer component or the like in the pressure-sensitive adhesive layer as time elapses.

In the case of a radiation-curing pressure-sensitive adhesive in which a radiation-curable monomer component or an oligomer component is blended with a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive, examples of the radiation-curable monomer component include urethane oligomer, urethane (meth) acrylate, trimethylol (Meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, Acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. Examples of the radiation-curable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based and polybutadiene-based oligomers. The molecular weight thereof is usually from 100 to 30,000, and it is contained in an amount of from 5 to 500 parts by mass based on 100 parts by mass of the base polymer such as acrylic polymer constituting the pressure-sensitive adhesive.

In the radiation curable pressure sensitive adhesive in which the base polymer has a carbon-carbon double bond, in the radiation curable polymer, the carbon-carbon double bond (hereinafter referred to as the ethylenic unsaturated group) (Meth) acryloyloxy group, (meth) acryloylamino group, and the like.

The radiation curable polymer is not particularly limited, and examples thereof include a (meth) acrylic copolymer, a polyester, an ethylene or a styrene copolymer, and a polyurethane, and a (meth) acrylic copolymer is preferable.

Further, (meth) acrylic in the (meth) acrylic copolymer includes acrylic or methacrylic, and either or both of them may be used.

Examples of the method of synthesizing a radiation curable polymer include a method of reacting a polymer having an ethylenically unsaturated group with a polymer having an ethylenically unsaturated group to obtain a polymer having an ethylenically unsaturated group introduced therein, (Meth) acryl oligomer, which is a kind of cross-linking agent) is easily and easily and preferably, the above-mentioned method (a) is preferable.

In the method (a), as the compound having an ethylenic unsaturated group, a compound having a structure having an ethylenic unsaturated group and a reactive group different from the ethylenic unsaturated group (referred to as a reactive group?) Is used and as the polymer into which the ethylenic unsaturated group is introduced, (Hereinafter, referred to as a "polymer having a reactive group β") having a reactive group β that reacts with the reactive group α of the compound having an ethylenically unsaturated group is used to react the reactive groups α and β.

For example, it is preferable that one of the reactive groups α and β is a nucleophilic attack group, and the other is a group receiving a nucleophilic attack or a group subjected to an addition reaction. Examples of such a reactive group include groups forming a hydroxyl group, an amino group, a mercapto group, a carboxyl group, an epoxy group, an oxetanyl group, an isocyanate group, a ring-shaped acid anhydride, a halogen atom, an alkoxy or an aryloxycarbonyl group, .

When either one of the reactive groups? And? Is a hydroxyl group, an amino group, a mercapto group, or a carboxyl group, the other reactive group may be a group forming an epoxy group, an oxetane group, an isocyanate group, , An alkoxy or aryloxycarbonyl group.

The reactive group a of the compound having an ethylenically unsaturated group is preferably a group which undergoes nucleophilic attack or a group which undergoes addition reaction and is, for example, an epoxy group, an oxetanyl group, an isocyanate group, a group which forms a cyclic acid anhydride , A halogen atom, an alkoxy or an aryloxycarbonyl group is preferable, a group forming an epoxy group, an oxetane group, an isocyanate group or a cyclic acid anhydride is more preferable, and an epoxy group, an oxetanyl group or an isocyanate group is more preferable, Group is preferable.

On the other hand, the reactive group? Of the polymer into which the ethylenically unsaturated group is introduced is preferably a nucleophilic attacking group, and for example, a hydroxyl group, an amino group, a mercapto group or a carboxyl group is preferable, and a hydroxyl group, an amino group or a mercapto group is more preferable More preferably a hydroxyl group, an amino group or a carboxyl group, still more preferably a hydroxyl group or a carboxyl group, and a hydroxyl group is particularly preferable.

As the monomer having an ethylenically unsaturated group and a reactive group?, Or a compound having a reactive group? Used in the synthesis of a polymer having a reactive group?, The following compounds may be mentioned.

- a compound in which the reactive group is a carboxyl group -

(Meth) acrylic acid, cinnamic acid, itaconic acid, fumaric acid, etc.

- a compound in which the reactive group is a hydroxyl group -

(Meth) acrylate having a hydroxyl group in the alcohol moiety [e.g., 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, trimethylolpropane mono (Meth) acrylate, which is an alkylamine having a hydroxyl group in the amine moiety (e.g., N-methyl (meth) acrylate, (Meth) acrylamide, N, N-bismethylol (meth) acrylamide], allyl alcohol and the like

- the compound in which the reactive group is an amino group -

(Meth) acrylate having an amino group in the alcohol moiety [e.g., 2- (alkylamino) ethyl (meth) acrylate, 3- Etc

- a compound in which the reactive group is a cyclic acid anhydride -

Maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride, etc.

- a compound in which the reactive group is an epoxy group or an oxetanyl group -

Glycidyl (meth) acrylate, allyl glycidyl ether, 3-ethyl-3-hydroxymethyloxetane, etc.

- a compound in which the reactive group is an isocyanate group -

(Meth) acryloyloxyalkyl isocyanate [for example, 2- (meth) acryloyloxyethyl isocyanate and 2- (meth) acryloyloxypropyl isocyanate], a part of isocyanate groups of a polyisocyanate compound, Or a urethane acrylate oligomer obtained by urethane-forming a compound having a carboxyl group and an ethylenic unsaturated group (for example, a urethane acrylate oligomer of 2 to 10 functional (meth) acrylate)

As the urethane acrylate oligomer, there can be mentioned, for example, aliphatic (meth) acrylates such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate and pentaerythritol tri (Meth) acrylate having a hydroxyl group and a diisocyanate such as toluene diisocyanate, methylene bisphenyl diisocyanate, hexamethylene diisocyanate, naphthalene diisocyanate, methylene biscyclohexyl isocyanate, isophorone diisocyanate, etc., An oligomer having at least one isocyanate group obtained by reacting isocyanate is preferable. An oligomer obtained by reacting a polyol compound, a polyether diol compound or a polyester diol compound in addition to hydroxyalkyl (meth) acrylate and a polyvalent isocyanate may also be used.

- a compound in which the reactive group is a halogen atom -

Halogenated triazines such as 2,4,6-trichloro-1,3,5-triazine and 2,4-dichloro-6-methoxy-1,3,5-triazine

As the compound having an ethylenically unsaturated group and a reactive group?, The above-mentioned reactive group is preferably an isocyanate group. On the other hand, as the monomer used for the synthesis of the polymer having the reactive group?, The compound in which the reactive group is a carboxy group, A phosphorus compound is preferable, and a compound in which the reactive group is a hydroxyl group is more preferable.

Among them, (meth) acryloyloxyalkyl isocyanate is preferable in the present invention, and 2- (meth) acryloyloxyethyl isocyanate is particularly preferable.

The method (b) is a method in which the urethane (meth) acrylate oligomer is used (the oligomer is also a crosslinking agent as described later), a (meth) acrylic copolymer and a urethane The pressure-sensitive adhesive layer of ultraviolet ray hardening property can be formed. The (meth) acrylic copolymer is preferably one obtained by polymerizing (meth) acrylic acid and (meth) acrylic acid ester. The preferred form of the (meth) acrylic ester component constituting the (meth) acrylic copolymer is the same as that described as the copolymer component in the polymer having the reactive group? Described later.

As the monomer having a reactive group? Used in the synthesis of the polymer having the reactive group?, Hydroxyalkyl (meth) acrylate or (meth) acrylic acid having a hydroxyl group in the alcohol moiety is preferable.

In the case of the hydroxyalkyl (meth) acrylate having a hydroxyl group in the alcohol moiety, the proportion of the monomer component having the reactive group? In the total (all) monomer component constituting the polymer having the reactive group? Is preferably 50 mol%, more preferably 20 mol% to 40 mol%, still more preferably 20 mol% to 35 mol%.

On the other hand, in the case of (meth) acrylic acid, the content of acrylic acid or methacrylic acid in the total monomer component is preferably from 0.1 to 3 mol%, more preferably from 0.5 to 2.5, still more preferably from 0.5 to 2.

When an ethylenically unsaturated group and a compound having a reactive group? Are allowed to react with a polymer having a reactive group? To introduce an ethylenically unsaturated group into the polymer having a reactive group?, A compound having a reactive group? More preferably from 10 to 30 parts by mass, more preferably from 10 to 20 parts by mass, per 100 parts by mass of the polymer.

By leaving the unreacted reactive group? After the reaction of the reactive groups? And? Described above, the resin properties can be controlled by a crosslinking agent or the like which will be described later.

The above-mentioned polymer having a reactive group? Preferably has a (meth) acrylic acid ester component as a copolymerizable component together with a monomer component having the above-mentioned reactive group? As a component thereof.

As the (meth) acrylic acid ester, one or more alkyl (meth) acrylates are preferable. The alcohol moiety of the (meth) acrylic acid ester does not have the reactive group beta. Preferably, the alcohol portion of the (meth) acrylic acid ester is unsubstituted.

As such a (meth) acrylic acid ester, the number of carbon atoms in the alcohol moiety is preferably from 1 to 12. The number of carbon atoms in the alcohol moiety is more preferably from 1 to 10, and still more preferably from 4 to 10. Among them, the alcohol moiety is preferably branched alkyl, and 2-ethylhexyl (meth) acrylate is particularly preferable.

When the radiation curable polymer contains a plurality of (meth) acrylic acid ester components as constituent components, the (meth) acrylic acid ester component includes a (meth) acrylic acid ester component having 1 to 8 carbon atoms in the alcohol moiety Among them, it is preferable to include a methyl (meth) acrylate component or a butyl (meth) acrylate component.

Specific examples of the monomer contained in the polymer as the copolymerization component are described below.

- alkyl esters of (meth) acrylic acid -

The alkyl ester of (meth) acrylic acid preferably has 1 to 12 carbon atoms in the alcohol moiety, and examples thereof include methyl (meth) acrylate, ethyl (meth) acrylate, (Meth) acrylate, isoamyl (meth) acrylate, isoamyl (meth) acrylate, hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isooctyl . These may be used alone or in combination of two or more. By using two or more kinds of them in combination, it is possible to exert various functions as a pressure-sensitive adhesive. In addition, non-staining properties including the following ability to the step on the surface of the semiconductor wafer and the prevention of residual glue can be compatible.

- Monomers other than alkyl esters of (meth) acrylic acid -

Examples of the monomer other than the alkyl ester of (meth) acrylic acid include vinyl acetate, styrene and (meth) acrylic acid amide such as N, N-diethylacrylic acid amide, N, N-diethylacrylic acid amide, Amide, N-acryloylmorpholine, and the like. These may be used alone or in combination of two or more.

In the present invention, as the monomer of the copolymerizable component to be combined with the monomer having the reactive group?, (Meth) acrylic acid ester and (meth) acrylic acid are preferable.

The proportion of the copolymer component in the total monomer component constituting the polymer having the reactive group? Is preferably from 5 to 85 mol%, more preferably from 20 to 80 mol%, still more preferably from 55 to 75 mol% , Still more preferably from 60 to 75 mol%.

The amount of the reactive group? Remaining in the radiation-curable polymer depends on the compounding amount of the compound having a reactive group?, But can also be controlled by the type and amount of the crosslinking agent to be described later.

The hydroxyl group value of the radiation curable polymer is preferably 5 to 70 mgKOH / g, the acid value is preferably 0 to 10 mgKOH / g, the glass transition temperature (Tg) is preferably -40 to -10 DEG C, , And preferably from 150,000 to 130,000.

The acid value is measured in accordance with JIS K5601-2-1: 1999, and the hydroxyl value is measured in accordance with JIS K 0070.

Here, the glass transition temperature refers to the glass transition temperature measured by DSC (differential scanning calorimetry) at a rate of temperature rise of 0.1 占 폚 / min.

The mass average molecular weight was determined by measuring the value of a 1% solution obtained by dissolving in tetrahydrofuran in terms of mass average molecular weight in terms of polystyrene as measured by gel permeation chromatography (Waters Co., trade name: 150-C ALC / GPC) Respectively.

(Photopolymerization initiator)

The radiation curable pressure sensitive adhesive preferably contains a photopolymerization initiator. The adhesive force after crosslinking can be controlled by adjusting the blending amount of the photopolymerization initiator in the pressure-sensitive adhesive. Specific examples of such photopolymerization initiators include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyl diphenyl sulfide, tetramethyl thiuram monosulfide, azobisisobutyl Butoxycarbonylphenyl ketone, 2-hydroxymethylphenylpropane, and the like can be used in combination with one or more of the following compounds: . These may be used alone or in combination.

The photopolymerization initiator is usually used in a proportion of 0.1 to 10 parts by mass based on 100 parts by mass of the total amount of the radiation curable polymer (polymer having an ethylenic unsaturated group) and the compound having an ethylenic unsaturated group. The amount is preferably from 0.1 to 10 parts by mass, more preferably from 1 to 6 parts by mass, per 100 parts by mass of the base resin constituting the pressure-sensitive adhesive.

By irradiating the radiation-curing pressure-sensitive adhesive layer thus formed with radiation such as ultraviolet rays, the adhesive force can be largely lowered, and the pressure-sensitive adhesive tape can be easily peeled off from the adhesive layer.

(Crosslinking agent)

In the present invention, it is preferable that the pressure-sensitive adhesive contains a cross-linking agent. The reactive group which is a crosslinkable group of the crosslinking agent is preferably a crosslinking agent which reacts with the reactive group? Of the polymer having the reactive group?.

For example, when the reactive group beta of the resin having the reactive group beta is a carboxyl group or a hydroxyl group, the reactive group which is a crosslinkable group of the crosslinking agent is preferably an annular acid anhydride, an isocyanate group, an epoxy group or a halogen atom, More preferably an epoxy group.

By using such a cross-linking agent, the residual amount of the reactive group? Of the polymer having the reactive group? Can be controlled depending on the amount of the cross-linking agent, and the toughness can also be controlled.

By using a crosslinking agent, the cohesive force of the pressure-sensitive adhesive (pressure-sensitive adhesive layer) can be controlled.

Examples of the crosslinking agent include polyvalent isocyanate compounds, polyvalent epoxy compounds, polyvalent aziridine compounds, and chelate compounds. Specific examples of the polyvalent isocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, and their adduct type.

Examples of the polyvalent epoxy compound include ethylene glycol diglycidyl ether, terephthalic acid diglycidyl ester acrylate, and the like. The polyvalent aziridine compound may be at least one compound selected from the group consisting of tris-2,4,6- (1-aziridinyl) -1,3,5-triazine, tris [1- (2-methyl) -aziridinyl] [1- (2-methyl) -aziridinyl] triphosphatriazine, and the like. Examples of the chelate compound include ethyl acetoacetate aluminum diisopropylate and aluminum tris (ethyl acetoacetate).

The crosslinking agent itself may be used as the radiation curable resin by using a crosslinking agent having at least two ethylenically unsaturated groups in the molecule, preferably an oligomer or polymer, as the pressure-sensitive adhesive.

Examples of the low-molecular compound having at least two ethylenically unsaturated groups in the molecule include trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipenta Diethylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, and the like can be used. There is a number.

In addition, a urethane acrylate oligomer can also be used. Specifically, a polyol compound such as polyester type or polyether type and a polyisocyanate compound [for example, 2,4-tolylene diisocyanate, 2,6- (Meth) acrylate having a hydroxyl group (e.g., methacrylate, isocyanate, 1,3-xylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane 4,4-diisocyanate) For example, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, polyethylene glycol (meth) acrylate].

The content of the cross-linking agent may be adjusted so that the adhesive strength and toughness of the pressure-sensitive adhesive fall within a desired range. The content of the cross-linking agent is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, and more preferably 0.6 to 5 parts by mass, More preferably 0.7 to 3 parts by mass.

(additive)

The pressure-sensitive adhesive may contain an additive in addition to the above.

Examples of such additives include silicone acrylates (for example, silicone diacrylate, silicone hexaacrylate) and radiation curing accelerators as additives for preventing wetting or improving slipperiness. As an additive, aminoacrylate as a water-proofing agent may be included. A plasticizer may be included as an additive. It may also contain a surfactant used in polymerization of the polymer.

(Thickness of the pressure-sensitive adhesive layer)

The thickness of the pressure-sensitive adhesive layer is not particularly limited, but is preferably 3 to 300 占 퐉, more preferably 3 to 100 占 퐉, and still more preferably 5 to 50 占 퐉.

(Other layers)

In the present invention, an intermediate layer such as a primer layer may be provided on the pressure-sensitive adhesive layer, if necessary.

<< Use of adhesive film and tape for semiconductor wafer processing >>

The adhesive film and the semiconductor wafer processing tape of the present invention are preferably used for manufacturing a semiconductor package which is FOD-mounted. In addition, the adhesive between the wiring board and the semiconductor chip is not only different from the adhesive between the semiconductor chips stacked in a multi-stage manner as in the conventional method, but is also suitable for manufacturing a semiconductor package using the same adhesive.

<< Semiconductor Package and Method for Manufacturing the Same >>

According to the present invention, a semiconductor package has a semiconductor chip provided with an adhesive layer formed by bonding an adhesive layer of the adhesive film of the present invention on a back surface of a semiconductor chip having at least one semiconductor circuit formed on its surface, And a second step of thermally curing the adhesive layer in the first step and the second step of compressing the adhesive layer.

As the semiconductor wafer, a semiconductor wafer having at least one semiconductor circuit formed on the surface thereof can be suitably used, and examples thereof include a silicon wafer, a SiC wafer, and a GaS wafer. A known apparatus such as a roll laminator or a manual laminator can be suitably used, for example, as an apparatus used when the adhesive layer of the semiconductor wafer processing tape is provided on the back surface of a semiconductor wafer.

In the case of using a tape for processing semiconductor wafers, first, the semiconductor wafer processing tape of the present invention is thermocompression-bonded on the back side of a semiconductor wafer having at least one semiconductor circuit formed on its surface. The apparatus used for providing the adhesive layer of the semiconductor wafer processing tape on the back surface of the semiconductor wafer is not particularly limited, and for example, a known apparatus such as a roll laminator or a manual laminator can be suitably used.

Then, the semiconductor wafer and the adhesive layer are simultaneously diced to obtain a semiconductor chip provided with an adhesive layer having a semiconductor wafer and an adhesive layer. The device used for dicing is not particularly limited, and a dicing device suitably known can be used.

Next, a dicing tape (a portion having a pressure-sensitive adhesive layer on the base film) is removed from the adhesive layer, the semiconductor chip provided with the adhesive layer and the wiring substrate are thermocompression bonded through an adhesive layer, A semiconductor chip is mounted. As the wiring substrate, a substrate on which a semiconductor circuit is formed can be appropriately used. For example, a printed circuit board (PCB), various lead frames, and a substrate on which electronic components such as resistors and capacitors are mounted .

The method of mounting the semiconductor chip provided with the adhesive layer on such a wiring board is not particularly limited and a method of bonding a semiconductor chip provided with an adhesive layer to an electronic component mounted on the surface of a wiring board or a wiring board using an adhesive layer It is possible to appropriately adopt a conventional method as far as possible. As such a mounting method, a known method such as a method using a mounting technique using a flip chip bonder having a heating function from above, a method using a die bonder having a heating function only from below, a method using a laminator, There is a method.

Thus, by mounting the semiconductor chip provided with the adhesive layer through the adhesive layer of the adhesive film of the present invention onto the wiring substrate, the adhesive layer can be followed by the unevenness on the wiring substrate caused by the electronic component, The substrate can be fixed in close contact with the substrate.

Then, the adhesive layer is thermally cured. The temperature of the thermosetting is not particularly limited as long as it is not lower than the thermosetting initiation temperature of the adhesive layer and varies depending on the kind of the resin to be used and is not to say a word, From the viewpoint that curing at a higher temperature is possible in a short time, 140 to 180 캜 is more preferable. On the other hand, if the temperature exceeds the upper limit, the epoxy resin, the curing agent and the additive in the adhesive layer during the curing process are volatilized So that it tends to be easier to foam. The curing treatment time is preferably 10 to 120 minutes, for example. In the present invention, by thermally curing the film-shaped adhesive at a high temperature, a semiconductor package in which the wiring board and the semiconductor chip are firmly bonded can be obtained without generating voids even when cured at a high temperature.

Then, it is preferable to connect the wiring substrate and the semiconductor chip provided with the adhesive layer through the bonding wire. Such a connection method is not particularly limited, and conventionally known methods, for example, a wire bonding method, a TAB (tape automated bonding) method, and the like can be suitably employed.

Alternatively, a plurality of semiconductor chips may be laminated by thermocompression bonding and thermosetting another semiconductor chip on the surface of the mounted semiconductor chip, and then connecting them to the wiring board by a wire bonding method. For example, there is a method in which semiconductor chips are shifted and laminated, or a method in which bonding wires are laminated while thickening the second adhesive layer.

In the present invention, it is preferable to seal the semiconductor chip provided with the wiring substrate and the adhesive layer by a sealing resin, and thus a semiconductor package can be obtained. The sealing resin is not particularly limited, and a suitably known sealing resin which can be used for manufacturing a semiconductor package can be used. In addition, the sealing method by the sealing resin is not particularly limited, and a known method can be appropriately adopted.

Example

Hereinafter, the present invention will be described in more detail based on examples and comparative examples, but the present invention is not limited to the following examples.

The materials used are the following materials.

[Thermoplastic resin]

Phenoxy resin A1: YP-70

Bisphenol A / bisphenol F copolymerized type, mass average molecular weight of about 5.5 million, glass transition temperature (Tg) of 60 占 폚, manufactured by Shin-Nikka Epoxy Co.,

Phenoxy resin A2: YX7180

Bisphenol F + 1, 6-hexanediol diglycidyl ether type phenoxy resin, mass average molecular weight of about 5.5 million, glass transition temperature (Tg) of 15 ° C

[Thermosetting resin]

· Epoxy resin B1: RE-310S

Bisphenol A type liquid epoxy resin (diglycidyl ether of bisphenol A), epoxy equivalent of 185 g / eq (trade name, available from Nippon Kayaku Co., Ltd.)

Epoxy resin B2: EPPN-501H

Epoxy resin (tris (4-hydroxyphenyl) methane triglycidyl ether), an epoxy equivalent of 164 g / eq (trade name, available from Nippon Kayaku Co.,

· Epoxy resin B3: JER871

Dimer acid ester type epoxy resin (dimer acid diglycidyl ester), epoxy equivalent 390-470 g / eq (trade name, available from Mitsubishi Chemical Corporation)

[Curing agent]

Dicyandiamide-based resin: DICY-7

A product name of NH2-C (= NH) -NH-CN

Phenolic resin: PSM-4271

A trade name of Gunei Chemical Industry Co., Ltd., a cresol novolac curing agent, a hydroxyl group equivalent of 106 g / eq

[Curing accelerator]

Phosphonium salts: TPP-K

(Trade name) manufactured by HOKKO CHEMICAL INDUSTRY CO., LTD., Tetraphenylphosphonium tetraphenylborate

[Stress relieving agent]

Epoxy modified polybutadiene: E-1800-6.5

Nippon Oil & Energy Corporation, number average molecular weight 1,800, epoxy equivalent weight 250 g / eq

[Heat conduction filler]

Alumina: Spherical particles having a thermal conductivity of 36 W / m 占 K and an average particle diameter of 2 to 3 占 퐉

Aluminum nitride: spherical particles having a thermal conductivity of 150 W / m 占 K and an average particle diameter of 1.0 to 1.5 占 퐉

Example 1

1. Production of adhesive film

, 70 parts by mass of a phenoxy resin A2 (YX7180 manufactured by Mitsubishi Chemical Corporation), 18 parts by mass of an epoxy resin B1 (RE-310S, manufactured by Nippon Yaku Yakuhin Co., Ltd.), 40 parts by mass of a phenolic curing agent PSM- ), 1.0 part by mass of a curing accelerator (TPP-K manufactured by Hokko Chemical Industry Co., Ltd.), and 329 parts by mass of a heat-transferable filler (alumina) were mixed in 30 ml of cyclopentanone to prepare an adhesive composition varnish (PET film), and dried by heating (holding and holding at 130 DEG C for 10 minutes) to volatilize the cyclopentanone to prepare an adhesive film having a thickness of 20 mu m as an adhesive layer .

Examples 2 to 7 and Comparative Examples 1 to 9

In the same manner as in Example 1 except that the thermoplastic resin, the epoxy resin, the curing agent, the curing accelerator, the stress relieving agent and the heat conduction filler in Example 1 were changed to the following Tables 1 and 2, Each of the adhesive films of Comparative Examples 1 to 9 was produced.

[Evaluation of performance of adhesive film]

The adhesive films prepared in Examples 1 to 7 and Comparative Examples 1 to 9 were used to measure the thermal conductivity after heat curing, the chloride ion concentration of extracted water, the glass transition point, the storage elastic modulus at 260 캜, The expansion coefficient and the saturation absorption rate were measured.

The reliability coefficients S1 and S2 were calculated from the above equations (1) and (2) using the obtained glass transition temperature, storage elastic modulus at 260 占 폚, linear expansion coefficient at the glass transition temperature or lower and saturation absorption rate .

Each of the adhesive films prepared above was bonded to a semiconductor package reliability test (MSL) and a semiconductor processing tape (manufactured by Furukawa Electric Co., Ltd.) at room temperature, and dicing A die-bonding film was produced, and semiconductor wafer processability (dicing property and pick-up property) was evaluated.

(Measurement of thermal conductivity)

A test piece of 12 mm x 12 mm x 2 mm was prepared from each adhesive film prepared above by molding and thermally cured at 180 캜 for one hour to obtain a test sample. The thermal diffusivity of the test piece was measured by a laser flash method (LFA447, manufactured by Netch Co., Ltd., 25 캜), and the thermal diffusivity was measured with a differential scanning calorimeter (Pyris1, (W / m 占 에) at 25 占 폚 was calculated from the product of the specific heat (capacity) obtained by the PerkinElmer Co., Ltd. and the specific gravity obtained by the Archimedes method.

(Measurement of chlorine ion concentration in extracted water)

About 10 g of each adhesive film before heat curing was cut out and heat treatment was performed at 180 캜 for one hour using a hot air oven to prepare a sample after heat curing. 2 g of the sample after thermosetting and 50 mL of pure water were placed in the vessel and subjected to a heat treatment at 121 캜 for 20 hours and the chlorine ion concentration of the extracted water was measured by ion chromatography (HIC-SP, manufactured by Shimadzu Corporation) ].

(Measurement of glass transition point and measurement of storage elastic modulus at 260 占 폚)

The PET film was peeled from each of the adhesive films prepared above, and the adhesive layers were laminated to form a laminate having a thickness of 1000 mu m. The laminate was cured by heating at 180 DEG C for 1 hour, and then a measurement specimen having a length of 20 mm and a width of 5 mm was cut out from the cured product. The storage elastic modulus and the loss elastic modulus at 25 占 폚 to 300 占 폚 were measured using a solid viscoelasticity measuring instrument (Rheogel-E4000, manufactured by UBM Co., Ltd.) for the sample after the thermosetting. The measurement conditions were a frequency of 10 Hz and a temperature raising rate of 5 캜 / minute. Further, the glass transition point (Tg) was obtained by calculating the value of tan? [E "(loss elastic modulus) / E '(storage elastic modulus)].

(Measurement of linear expansion coefficient)

A 5 mm square column was prepared from each of the adhesive films prepared above by molding, heated at 180 캜 for 1 hour to cure the sample, and the resulting sample was placed in a thermomechanical analyzer (TMA7100, manufactured by Hitachi High-Tech Science Co., Ltd. (Manufactured by Hitachi High-Tech Science Corporation) under the conditions of an indentation load of 0.02 N, a probe diameter of 3 mm, and a temperature raising rate of 7 deg. C / min in a temperature range of -50 DEG C to 300 DEG C , And the coefficient of linear expansion (CTE alpha 1) at the glass transition temperature (Tg) or lower was calculated.

(Measurement of saturation absorption rate)

The PET film was peeled off from each of the adhesive films prepared above and molded into a disk having a diameter of 50 mm and a thickness of 3 mm and heat treatment was performed at 180 캜 for one hour using a hot air oven to prepare a test piece after heat curing did. The mass (W ₁ ) before the absorption of the test piece was measured and then absorbed at a temperature of 85 ° C and a relative humidity of 85% using a thermostatic hygrostat (product name: SH-222, manufactured by ESPEC CORP) (W ₂ ) after the absorption at a temperature of 85 ° C. and a relative humidity of 85% for 24 hours or more after the measurement of the mass of the test piece after the absorption is confirmed to be 10 mass% or less, Saturated water absorption was obtained by the following formula.

Saturation absorption rate WA (mass%) = {(W ₂ -W ₁ ) / W ₁ } × 100

(Semiconductor wafer processability: dicing property, pick-up property)

1) Dicing

Each of the produced adhesive films was bonded to a dicing tape provided with an acrylic pressure-sensitive adhesive layer as a base film with an ionomer resin at room temperature to prepare a dicing die-bonding film. Next, under the condition of a temperature of 70 占 폚, the wafer was bonded to a polished surface (roughness: # 2,000) of a silicon wafer which had been polished to a thickness of 50 占 퐉 and diced to obtain a semiconductor chip . The phenomenon in which the diced chip is peeled off from the working tape during dicing in the middle and scattered is referred to as &quot; chip scattering &quot;, and the phenomenon that the edge is broken when the chip cutting surface after dicing is observed with a microscope is called & , And chip scattering is referred to as "pass" when the number of generated chips is 10% or less of the total number of chips (140 to 160), and "10% or more" is referred to as " In the chipping, 20 pieces of chips after dicing are randomly drawn out, and when the maximum height of breakage by microscopic observation is 50% or less (that is, 25 탆 or less) "

2) Pickup property

The phenomenon that the interface between the adhesive film and the processing tape can not be peeled off when the dicing die-bonding film is picked up in the above 1) is referred to as &quot; pick-up mistake &quot; DAF remaining ", and a case where the number of occurrences is 10% or more is referred to as" pass ", and a case where the number of occurrences is 10% or less is referred to as" Called "failure".

(Reliability test: MSL)

Evaluation of the solder heat resistance test MSL (Moisture Sensitivity Level) (resistance to humidity resistance) was carried out as follows.

The semiconductor chip provided with the above-prepared dicing die-bonding film was bonded to the organic substrate through an adhesive film. The bonding conditions were a temperature of 140 DEG C, a pressure of 0.1 MPa, and a time of 1 second. Next, the lead frame to which the semiconductor chip was bonded was heat-treated with a drier at 120 DEG C for 1 hour, 150 DEG C for 1 hour, and 180 DEG C for 1 hour. And then packaged with an encapsulating resin to obtain a semiconductor package. The sealing conditions were a heating temperature of 175 DEG C for 120 seconds. Thereafter, an IR reflow furnace was set which was set to dry at 125 DEG C for 24 hours, to carry out moisture absorption at 85 DEG C, relative humidity 85%, and 168 hours, and to store at 260 DEG C or higher for 10 seconds, The semiconductor package was placed and subjected to the reflow test (holding for 10 seconds at 260 DEG C or more) three times. Thereafter, the semiconductor package was observed with an ultrasonic microscope to confirm whether or not there was peeling at the boundary between the adhesive film and the organic substrate. Confirmation was made with respect to eight semiconductor chips, and the case where the semiconductor chip in which the peeling occurred was zero was judged as "pass", and the case where one or more semiconductor chips were judged as "fail".

MSL1 shown in Table 1 and Table 2 is a level standard prescribed by IPC / JEDEC (Joint Electronic Equipment Technical Committee).

The obtained results are summarized in Tables 1 and 2 below.

In Comparative Example 9, since the thermal conductivity was 0.4 W / m 占, and the specified 0.5 W / m 占 K or more was not satisfied, the evaluation of the semiconductor wafer processability was carried out, but the remaining evaluation was not performed.

Here, the number representing the blending amount of the material is the mass part. In the table, &quot; - &quot; indicates unused. The semiconductor wafer processability was expressed as &quot; semiconductor processability &quot;.

From the above Tables 1 and 2, the following can be known.

In Examples 1 to 7 of the present invention, the adhesive film (adhesive layer) after curing has high thermal conductivity, excellent heat dissipation, and excellent reliability test (MSL) of solder heat resistance. In addition, in addition to this, the workability of the semiconductor is excellent.

Here, as in Comparative Example 9, when the content of the heat conduction filler is less than 30% by volume, the thermal conductivity of the adhesive film (adhesive layer) after curing becomes less than 0.5 W / m 占, and the heat radiation property is lowered.

When the content of the heat conduction filler is 30 vol% or more, the thermal conductivity becomes 0.5 W / m · K or more.

However, as in the case of Comparative Examples 1 to 8, the reliability test of solder heat resistance was conducted as long as the reliability coefficient S1 did not satisfy any of the ranges of 50 to 220 x ^10-6 GPa and the reliability coefficient S2 of 10 to 120 x ^10-6 GPa (MSL), peeling occurs at the boundary between the adhesive film and the organic substrate.

In addition, when the content of the heat conduction filler exceeds 70% by volume, unless the reliability coefficient S1 or S2 satisfies the range specified in the present invention, the workability of the semiconductor often deteriorates. Here, in Comparative Example 1, the phenoxy resin to be used is a phenoxy resin having a repeating unit represented by the general formula (I), and in particular, bisphenol F and a diglycidyl ether of 1,6- As a polymer, it is considered that the processability of a semiconductor is excellent.

While the invention has been described in conjunction with the embodiments thereof, it is to be understood that the invention is not to be limited by any of the details of the description thereof except as specifically set forth and that the invention is broadly interpreted without departing from the spirit and scope of the invention as set forth in the appended claims. I think it should be.

This application claims priority based on Japanese Patent Application No. 2017-091351, filed on May 1, 2017, which is incorporated herein by reference and incorporates its contents as part of the description of this specification.

Claims (10)

An adhesive film comprising an adhesive layer containing a thermosetting resin, a thermoplastic resin and a heat-conducting filler,
Wherein the thermally conductive filler has a thermal conductivity of 12 W / m · K or more and a content of 30 to 50% by volume in the adhesive layer, the thermoplastic resin contains at least one phenoxy resin, ,
The reliability coefficient S1 calculated by the following equation (1) is 50 to 220 (x 10 ^-6 GPa)
The reliability coefficient S2 calculated by the following formula (2) is 10 to 120 (x 10 &lt; ^-8 GPa)
And a thermal conductivity of 0.5 W / m · K or more.
S1 = (Tg-25 [占 폚] 占 (CTE? 1 [ppm / K]) 占 (storage modulus E '[GPa] (One)
S2 = S1 x (saturation absorption WA [mass%]) ... (2)
(Tg is the glass transition temperature, and CTE? 1 is the glass transition temperature of the cured adhesive layer.) In the formulas (1) and (2), S1, S2, Tg, CTE? 1, storage elastic modulus E ' And the storage elastic modulus E 'is a value measured at 260 DEG C. The inside of [] indicates the unit. The method according to claim 1,
Wherein the phenoxy resin has a glass transition temperature (Tg) of -50 to 50 占 폚 and a mass average molecular weight of 10,000 to 100,000. 3. The method according to claim 1 or 2,
Wherein the phenoxy resin has a repeating unit represented by the following general formula (I).

(In the general formula (I), L ^a represents a single bond or a divalent linking group, and R ^a1 and R ^a2 each independently represent a substituent.) Ma and na each independently represent an integer of 0 to 4 X represents an alkylene group, and nb represents an integer of 1 to 10.) 4. The method according to any one of claims 1 to 3,
Wherein the thermosetting resin is an epoxy resin. 5. The method according to any one of claims 1 to 4,
Wherein the heat conduction filler is at least one selected from alumina and aluminum nitride. 6. The method according to any one of claims 1 to 5,
Wherein the adhesive film contains a phenol resin as a curing agent. 7. The method according to any one of claims 1 to 6,
An adhesive film characterized by containing a phosphonium salt compound as a curing accelerator. A tape for semiconductor wafer processing, characterized by having a pressure-sensitive adhesive layer on a base film, and having the adhesive film according to any one of claims 1 to 7 on the pressure-sensitive adhesive layer. A semiconductor package using the adhesive film according to any one of claims 1 to 7. A semiconductor chip having an adhesive layer formed by bonding an adhesive layer of the adhesive film according to any one of claims 1 to 7 and a wiring board to the back surface of a semiconductor chip having at least one semiconductor circuit formed on its surface, A first step of thermocompression bonding the thermosetting resin,
A second step of thermally curing the adhesive layer,
Wherein the semiconductor package is formed of a conductive material.