KR20120106623A - Highly heat conductive film-shaped adhesive composition, highly heat conductive film-shaped adhesive and method for producing semiconductor package by using the highly heat conductive film-shaped adhesive - Google Patents

Abstract

PURPOSE: A highly heat conductive film-shaped adhesive composition is provided to have excellent adhesion with object, to have sufficiently low abrasion ratio of processing blade, to able to obtain a highly heat conductive film-shaped adhesive having excellent heat conductivity after hardening. CONSTITUTION: A highly heat conductive film-shaped adhesive composition comprises an epoxy resin, an epoxy resin hardener, inorganic filler, and phenoxy resin. The inorganic filler satisfies the following conditions that average particle diameter is 0.1-5.0 micron, Mohs hardness is 1-8, and thermal conductivity is 30 W/(m·K) or more. The content of the inorganic filler is 30-70 volume%. The epoxy resin is a triphenylmethane type epoxy resin in chemical formula 1. In chemical formula 1, n is an integer from 0-10.

Description

HIGH HEAT CONDUCTIVE FILM-SHAPED ADHESIVE COMPOSITION, HIGHLY HEAT CONDUCTIVE FILM-SHAPED ADHESIVE AND METHOD FOR PRODUCING SEMICONDUCTOR PACKAGE BY USING THE HIGHLY HEAT CONDUCTIVE FILM-SHAPED ADHESIVE}

The present invention relates to a composition for a high thermal conductive film adhesive, a high thermal conductive film adhesive, a semiconductor package using the same, and a manufacturing method thereof.

In recent years, the miniaturization and high functionalization of electronic devices have progressed, and the high functionalization is progressing also in the semiconductor package mounted in the inside, and the processing speed of the semiconductor element in a semiconductor package is getting faster. However, as the processing speed is increased, heat is more likely to be generated on the surface of the semiconductor element. Thus, there is a problem that, for example, the operating speed of the semiconductor element is lowered or an operation defect of the electronic device is caused by the generated heat.

In order to eliminate such adverse influences by heat, the structural members of the semiconductor package are required to have thermal conductivity for discharging generated heat to the outside of the package. In addition, in a so-called die attatch material which bonds between a semiconductor element and a wiring board or between semiconductor elements, sufficient insulation and adhesion reliability are demanded with high thermal conductivity.

In addition, such a die-bonding material is often used in the form of a paste. However, as the high performance of the semiconductor package has been required, high density mounting of the inside of the package is required. In order to prevent contamination of a member, the use in the form of a film (die adhesive film) is increasing recently.

However, in the so-called die bonding process in which the die adhesive film is attached to the back surface of the wafer or in the mounting of the semiconductor element on which the die adhesive film is formed, the back surface of the wafer or in particular the surface of the wiring board on which the semiconductor element is mounted is not necessarily smooth. When the viscosity of the die adhesive film is low at the time of mounting or at the time of mounting, the adhesiveness between the die adhesive film and the to-be-adhered body may deteriorate and air may enter the interface between both. The air entered not only lowered the adhesive force after heat-hardening of the die-adhesive film, but also had a problem of causing package cracks.

As a material which can conventionally be used as a so-called die-bonding film, for example, Patent Document 1 describes a thermally conductive filler made of aluminum hydroxide and silicon dioxide and a sheet of a heat conductive member made of silicone resin. However, in the sheet | seat of the heat conductive member described in patent document 1, although it has a high thermal conductivity to some extent, there still exists a problem about adhesiveness with a to-be-adhered body.

Moreover, in patent document 2, the adhesive sheet which consists of an epoxy resin containing inorganic fillers, such as a silicon oxide, is described. However, in the adhesive sheet of patent document 2, although it has high thermal conductivity, insulation, and some adhesiveness, it was still inadequate about the adhesiveness to a to-be-adhered body.

Moreover, in patent document 3, the film adhesive which consists of resin containing an epoxy resin, a hardening | curing agent, a hardening accelerator, and a specific alumina powder is described. However, in the film adhesive described in patent document 3, although it has high thermal conductivity and insulation, it was still inadequate about the adhesiveness to a to-be-adhered body.

Japanese Patent Publication No. 2009-286809 Japanese Patent Publication No. 2008-280436 Japanese Patent Publication No. 2007-246861

In the manufacturing process of a semiconductor package, it is also necessary that the wear rate of the processing blade by a die bonding film is small in what is called a dicing process which cut | disconnects the wafer in which the die adhesion film and the semiconductor element were formed simultaneously.

However, in order to improve the thermal conductivity of the die-bonding film, the use of thermally conductive inorganic fillers such as aluminum hydroxide described in Patent Documents 1 to 3 increases the wear rate of the processing blades by the die-bonding film, thus resulting in a cutting process (dicing process). The present inventors have found that although cutting can be performed for a while after the start of the process, the cutting amount of the die-bonding film becomes insufficient, resulting in a processing defect such that a portion where the die-bonding film is not fully cut as shown in FIG. 1 occurs. did.

In addition, in order to prevent this problem from occurring, increasing the frequency of blade replacement leads to an increase in cost because productivity is lowered. On the other hand, if a blade with a small amount of wear is used, chipping, which causes defects in the wafer, may occur. The present inventors have found that there is a problem of causing a decrease.

This invention is made | formed in view of the subject which the said prior art has, and obtaining the high thermal conductive film adhesive which is excellent in adhesiveness with a to-be-adhered body, the wear rate of a process blade is small enough, and exhibits excellent thermal conductivity after hardening. It is an object to provide a composition for a high thermal conductive film adhesive, a high thermal conductive film adhesive, a semiconductor package using the same, and a method for producing the same.

MEANS TO SOLVE THE PROBLEM As a result of earnestly researching in order to achieve the said objective, the present inventors made it excellent that adhesiveness with a to-be-adhered body is obtained by thermocompression bonding by making melt viscosity in 80 degreeC or less 10000 Pa.s or less in a film adhesive. By using the composition for high thermal conductivity film-like adhesives found and further containing an epoxy resin, an epoxy resin curing agent, a phenoxy resin, and a specific inorganic filler in a specific content, the wear rate of the processing blade is sufficiently small and the curing is further achieved. Later, it was found that a high thermal conductive film adhesive having excellent thermal conductivity was obtained, and thus the present invention was completed.

That is, the composition for high thermal conductive film adhesives of this invention

Epoxy resin (A), an epoxy resin hardener (B), an inorganic filler (C), and a phenoxy resin (D) are contained, and the said inorganic filler (C) has the following (i):

(Iii) an average particle diameter of 0.1 to 5.0 µm,

(Ii) Mohs' Hardness is 1 to 8,

(Iii) the thermal conductivity satisfies the overall conditions of 30 W / (m? K) or more, and

Content of the said inorganic filler (C) is 30-70 volume%, It is characterized by the above-mentioned.

In the composition for high thermal conductive film adhesives of this invention, the said epoxy resin (A) is a following formula (1):

[N in formula (1) represents the integer of 0-10]

It is preferable that it is a triphenylmethane type epoxy resin shown, and it is more preferable that the said inorganic filler (C) is aluminum nitride.

Moreover, the high thermal conductive film adhesive of this invention is obtained by heat-drying the composition for high thermal conductive film adhesives of this invention, It is characterized by having a thickness of 10-150 micrometers, It is a rheometer from 20 degreeC to 10 degreeC It is preferable that the melt viscosity in 80 degreeC observed when heated at the temperature increase rate of / min is 10000 Pa * s or less, and the thermal conductivity after thermosetting is 1.0 W / (m * K) or more.

In addition, the manufacturing method of the semiconductor package of the present invention

A first step of forming an adhesive layer by thermocompression bonding the high thermal conductive film adhesive of the present invention on the back surface of a wafer on which a semiconductor circuit is formed on the surface;

A second step of obtaining a semiconductor device having the wafer and the adhesive layer by dicing the wafer and the adhesive layer at the same time after the wafer and the dicing tape are adhered through the adhesive layer;

A third step of detaching the dicing tape from the adhesive layer and thermally compressing the semiconductor element and the wiring substrate through the adhesive layer;

It is characterized by including the 4th process of thermosetting the said high thermal conductive film adhesive, The semiconductor package of this invention is obtained by the manufacturing method of the semiconductor package of this invention. It is characterized by the above-mentioned.

In addition, although the reason why the said objective is achieved by the structure of this invention is not necessarily clear, the present inventors guess as follows. That is, in this invention, the high thermal conductivity which becomes a specific low melt viscosity in specific temperature range by using the composition for high thermal conductivity film adhesives containing an epoxy resin, an epoxy resin hardening | curing agent, a phenoxy resin, and a specific inorganic filler of specific content is used. A film adhesive is obtained. Therefore, the film which improved adhesiveness by improving the adhesive sheet which improved adhesiveness, the tensile strength described in patent document 3, etc. by simply being in the semi-hardened state (B stage state) described in patent document 2, for example. Compared to the phase adhesive, the present inventors speculate that the high thermal conductive film adhesive of the present invention can exhibit more excellent adhesion because the interface with the uneven to-be-adhered body can be filled without gaps by thermocompression bonding in the specific temperature range. do.

In addition, in the present invention, by containing an inorganic filler having a specific hardness and particle diameter in a specific content, in the high thermal conductivity film-like adhesive obtained by using the composition for high thermal conductivity film-like adhesive of the present invention, the wear rate of the processing blade can be reduced. The inventors speculate that it is.

(Effects of the Invention)

ADVANTAGE OF THE INVENTION According to this invention, the composition for high thermal conductivity film adhesives which is excellent in adhesiveness with a to-be-adhered body, the wear rate of a process blade is small enough, and exhibits the outstanding thermal conductivity after hardening, and the composition for high thermal conductivity film adhesives and high thermal conductivity It becomes possible to provide a film adhesive, the semiconductor package using the same, and its manufacturing method.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a photograph showing machining failure caused by wear of a processing blade in a conventional dicing process.
It is a schematic longitudinal cross-sectional view which shows one preferable embodiment of the 1st process of the manufacturing method of the semiconductor package of this invention.
It is a schematic longitudinal cross-sectional view which shows one preferable embodiment of the 2nd process of the manufacturing method of the semiconductor package of this invention.
It is a schematic longitudinal cross-sectional view which shows one preferable embodiment of the 3rd process of the manufacturing method of the semiconductor package of this invention.
It is a schematic longitudinal cross-sectional view which shows one preferable embodiment of the process of connecting the bonding wire of the manufacturing method of the semiconductor package of this invention.
2E is a schematic longitudinal cross-sectional view showing one preferred embodiment of a semiconductor package manufactured by the method for manufacturing a semiconductor package of the present invention.

EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated in detail based on the preferable embodiment.

First, the composition for high thermal conductive film adhesives of this invention is demonstrated. The composition for high thermal conductive film adhesives of this invention contains an epoxy resin (A), an epoxy resin hardening | curing agent (B), an inorganic filler (C), and a phenoxy resin (D), The said inorganic filler (C) has the following ( Ⅰ)? (Ⅲ):

(Iii) an average particle diameter of 0.1 to 5.0 µm,

(Ii) Mohs' Hardness is 1 to 8,

(Iii) The thermal conductivity satisfies the overall conditions of 30 W / (m · K) or more, and the content of the inorganic filler (C) is 30 to 70% by volume.

The epoxy resin (A) by this invention is a thermosetting resin which has an epoxy group, It is preferable that weight average molecular weights are 300-2000, and, as such epoxy resin (A), it is more preferable that it is 300-1500. If the weight average molecular weight is less than the above lower limit, the monomer or dimer increases and the crystallinity becomes stronger, so that the film adhesive tends to be weak, whereas if the weight average molecular weight exceeds the upper limit, the melt viscosity of the film adhesive becomes high, so that it is crimped to the wiring board. When it does so, it cannot fill enough the unevenness | corrugation on a board | substrate, and there exists a tendency for adhesiveness with a wiring board to fall. In addition, in this invention, a weight average molecular weight is a gel permeation chromatography (GPC) (brand name: HLC-82A (Toso Corporation), a solvent: tetrahydrofuran, a column: TSKgelG2000HXL (made by Toso Corporation) (two)) , G4000HXL (manufactured by Tosoh Corporation) (one), temperature: 38 ° C., rate: 1.0 ml / min, measured in terms of standard polystyrene (trade name: A-1000, manufactured by Tosoh Corporation). .

As said epoxy resin (A), any of a liquid, solid, or semisolid may be sufficient. In the present invention, the liquid refers to the softening point of less than 50 ℃, the solid refers to the softening point of 60 ℃ or more, the semi-solid means that the softening point is between the softening point of the liquid and the softening point of the solid (more than 50 ℃ less than 60 ℃). Say that. As said epoxy resin (A), it is preferable that a softening point is 100 degrees C or less from a viewpoint that the film adhesive which can reach low melt viscosity in the preferable temperature range (for example, 60-120 degreeC) is obtained. In addition, in this invention, a softening point is the value measured by the softening point test (circulation type) method (measurement condition: based on JIS-2817).

In the epoxy resin (A), the epoxy equivalent is 500 g / eq or less from the viewpoint that the crosslinking density of the cured product is high and the contact probability between the inorganic fillers (C) to be blended as a result is high, thereby increasing the contact area to obtain a higher thermal conductivity. It is preferable and it is more preferable that it is 150-450 g / eq. In addition, in this invention, an epoxy equivalent means the number of grams (g / eq) of resin containing a 1-gram equivalent epoxy group.

As a skeleton of the said epoxy resin (A), a phenol novolak type, an ortho cresol novolak type, a cresol novolak type, a dicyclopentadiene type, a biphenyl type, a fluorene bisphenol type, a triazine type, a naphthol type, a naphthalenediol type , Triphenylmethane type, tetraphenyl type, bisphenol A type, bisphenol F type, bisphenol AD type, bisphenol S type, trimethylolmethane type and the like, but the resin adhesive has low crystallinity and has a good appearance. It is preferable that it is a triphenylmethane type, a bisphenol A type, a cresol novolak type, an orthocresol novolak type from a viewpoint of being obtained, and when crosslinking density becomes high and hardens a film adhesive, the order of molecular structure improves and thermal conductivity is carried out. As said epoxy resin (A) from a viewpoint that this tends to improve, following formula (1):

[N in formula (1) represents the integer of 0-10]

Triphenylmethane type epoxy resin represented by is more preferable.

As said epoxy resin (A), you may use individually by 1 type, or may use in combination of 2 or more type, When using in combination of 2 or more type, for example, adjustment of the viscosity of a composition is easy, a film adhesive and a wafer Epoxy having a softening point of 50 to 100 ° C from the viewpoint that the adhesion between the wafer and the film-like adhesive tends to be exhibited even when the step (wafer lamination step) of thermocompression bonding (wafer lamination step) is performed at a low temperature (preferably 40 to 80 ° C). It is preferable to use combining resin (a1) and the epoxy resin (a2) whose softening point is less than 50 degreeC.

As said epoxy resin (a1), it is solid or semisolid at room temperature, It is preferable that it is 50-100 degreeC, and it is more preferable that it is 50-80 degreeC. If the softening point is less than the above lower limit, the viscosity of the resulting film adhesive is lowered, so it is difficult to maintain the film shape at normal temperature. On the other hand, if the upper limit is exceeded, a preferable temperature range (for example, the film adhesive obtained) is obtained. , 60 to 120 ° C) tends to be difficult to reach a low melt viscosity.

As said epoxy resin (a1), it is preferable that weight average molecular weights are more than 500 and 2000 or less, and it is more preferable that it is 600-1200. If the weight average molecular weight is less than the above lower limit, the monomer or dimer increases and the crystallinity becomes stronger, so that the film adhesive tends to be weak, whereas if the weight average molecular weight exceeds the upper limit, the melt viscosity of the film adhesive becomes high, so that it is crimped to the wiring board. When it does so, it cannot fill enough the unevenness | corrugation on a board | substrate, and there exists a tendency for adhesiveness with a wiring board to fall.

The skeleton of such an epoxy resin (a1) is preferably triphenylmethane type, bisphenol A type, cresol novolak type, orthocresol novolak type from the viewpoint of obtaining a film adhesive having low crystallinity of resin and having a good appearance. When the crosslinking density is higher and the film adhesive is cured, the order of molecular structure tends to be improved and the thermal conductivity tends to be improved. As the epoxy resin (a1), triphenylmethane type epoxy resins and bisphenol A type epoxy resins are used. Resin and a cresol novolak-type epoxy resin are more preferable, and triphenylmethane type epoxy resin represented by said Formula (1) is further more preferable.

As said epoxy resin (a2), even when the process of carrying out the thermocompression bonding of a film adhesive and a wafer (wafer lamination process) at low temperature (preferably 40-80 degreeC), the adhesiveness of a wafer and a film adhesive is exhibited. It is preferable that a softening point is less than 50 degreeC from a viewpoint that there exists, and it is more preferable that a softening point is 40 degrees C or less. As such an epoxy resin (a2), it is preferable that weight average molecular weights are 300-500, and it is more preferable that it is 350-450. If the weight average molecular weight is less than the above lower limit, the monomer increases and the crystallinity becomes stronger, so that the film adhesive tends to be weak. On the other hand, if the weight average molecular weight is exceeded, the melt viscosity increases, so that the wafer and the film adhesive There exists a tendency for adhesiveness to fall.

As a skeleton of such an epoxy resin (a2), bisphenol A type, bisphenol A / F mixed type, bisphenol F type, and propylene, which are oligomer type liquid epoxy resins, are obtained from the viewpoint of obtaining a film adhesive having low crystallinity and a good appearance. It is preferable that it is an oxide modified bisphenol A type, and as said epoxy resin (a2), a bisphenol A type epoxy resin and a bisphenol A / F mixed type epoxy resin are more preferable from a viewpoint of low melt viscosity and a lower crystallinity.

As a ratio of the said epoxy resin (a1) and the said epoxy resin (a2), it is preferable that mass ratio (a1: a2) is 95: 5-30: 70, and it is more preferable that it is 70: 30-40: 60. When the content of the epoxy resin (a1) is less than the lower limit, the film tack property of the film adhesive becomes stronger, and it is difficult to peel off from the cover film or dicing tape. On the other hand, when the upper limit is exceeded, the viscosity of the composition becomes high. There exists a tendency for the property of the film adhesive obtained to become weak.

As said epoxy resin (A), it is preferable that content in the composition for high thermal conductive film adhesives of this invention is 5-30 mass%, and it is more preferable that it is 10-25 mass%. When the said content is less than the said minimum, when hardening, since the resin component which becomes high in crosslinking density becomes small, there exists a tendency for the thermal conductivity of a film adhesive to become difficult to improve, and when it exceeds the said upper limit, since a main component becomes an oligomer, a slight temperature change is carried out. Even in the state of the film (film tackiness) tends to change easily.

As the epoxy resin curing agent (B) according to the present invention, known curing agents such as amines, acid anhydrides, and polyhydric phenols can be used, but a temperature range in which the epoxy resin (A) and the phenoxy resin (D) become low melt viscosity It is preferable to use a latent hardening | curing agent from a viewpoint that the composition for film adhesives which exhibits curability at high temperature exceeding and has fast curing property, and has high storage stability which can be stored for a long term at room temperature is obtained. Examples of the latent curing agent include dicyandiamide, imidazoles, hydrazides, boron trifluoride-amine complexes, amineimides, polyamine salts, modified substances thereof, and microcapsule types. These may be used individually by 1 type, or may be used in combination of 2 or more type.

It is preferable that content of the said epoxy resin hardener (B) is 0.5-50 mass% with respect to the said epoxy resin (A) normally, and it is 1-10 mass%. If the content is less than the lower limit, the curing time tends to be long, whereas if the content exceeds the upper limit, the excess hardener remains in the film adhesive and the residual hardener adsorbs moisture. There is a tendency for defects to occur easily.

The inorganic filler (C) according to the present invention is granular from the viewpoint of high filling ability and fluidity, and the average particle size of the inorganic filler (C) needs to be 0.1 to 5.0 µm. If an average particle diameter is less than the said minimum, it will become difficult for a filler to contact and the thermal conductivity of a film adhesive will become low. On the other hand, when the average particle diameter exceeds the upper limit, the filler serves as an opportunity when the thin film adhesive is produced by an applicator such as a roll knife coater, and the stripe is easily generated on the film surface, or the wear rate of the processing blade by the film adhesive is increased. Gets bigger Moreover, as an average particle diameter of the said inorganic filler (C), it is preferable that it is 0.5-2.0 micrometers from a viewpoint of producing the ultra-thin film of 5 micrometers or less, ensuring thermal conductivity. In addition, in this invention, an average particle diameter means the total volume of particle in the particle diameter distribution measured by the laser diffraction scattering method (measurement conditions: dispersion medium sodium hexametaphosphate, laser wavelength: 780 nm, measuring apparatus: microtrack MT3300EX). When the ratio is 100%, the particle diameter when 50% is accumulated in the cumulative curve of the volume fraction of the particle diameter.

The inorganic filler (C) according to the present invention has a Mohs hardness of 1 to 8. When Mohs' Hardness exceeds the said upper limit, the wear rate of the processing blade by a film adhesive becomes large. Moreover, as Mohs' Hardness of the said inorganic filler (C), it is preferable that it is 3-8 from a viewpoint of preventing the blockage of the resin of the blade edge of a processing blade by ensuring moderate abrasion property in a film adhesive. In the present invention, the Mohs hardness is a value obtained by determining the hardness of the measured object by visually measuring whether or not the measured object is scratched by rubbing each other from a mineral having a small hardness with respect to the measured object using a 10-step Mohs hardness tester. Say.

The inorganic filler (C) according to the present invention has a thermal conductivity of 30 W / (m? K) or more. If the thermal conductivity is less than the above lower limit, more inorganic fillers are blended in order to secure the target thermal conductivity, and as a result, the melt viscosity of the film adhesive rises, and it is possible to sufficiently fill in the unevenness of the substrate when pressing the wiring substrate. There is no adhesiveness with the wiring board. The thermal conductivity of the inorganic filler (C) is particularly preferably 100 W / (m? K) or more from the viewpoint of ensuring high thermal conductivity with a small amount of filler. In the present invention, the thermal conductivity of the filler is measured by the laser flash method (measurement condition: laser pulse width 0.4 ㎳, laser wavelength 1.06 占 퐉, measuring device: Albac Co., Ltd. TC7000 type). Refers to the value calculated by the product of the density of the filler species and the specific heat.

As a material of the inorganic filler (C) which concerns on this invention, what is necessary is just to have electrical insulation and the said thermal conductivity, for example, aluminum nitride, magnesium oxide, boron nitride, aluminum hydroxide, etc. are mentioned. Among these, aluminum nitride is preferable as the inorganic filler (C) from the viewpoint of exhibiting excellent thermal conductivity after curing in the film adhesive. Moreover, as said inorganic filler (C), although it may use individually by 1 type or in combination of 2 or more types, when using 2 or more types in combination, it is the said inorganic filler from a viewpoint that the film adhesive which has a higher thermal conductivity is obtained. It is more preferable that at least 1 type of (C) is aluminum nitride, and it is still more preferable that 50 volume% or more is aluminum nitride with respect to the total amount of the said inorganic filler (C).

The inorganic filler (C) by this invention is 30-70 volume% in content in the composition for high thermal conductive film adhesives of this invention. When content is less than the said minimum, the thermal conductivity after hardening in a film adhesive falls, and when used for a semiconductor package, the heat radiation efficiency to the outside of a package will fall. On the other hand, when the said upper limit is exceeded, since the content of the epoxy resin (A) and the phenoxy resin (D) acting as a binder becomes relatively small, the properties of the film adhesive are weakened. In addition, the said content can obtain high thermal conductivity (preferably 1.0 W / (m * K) or more) in the film adhesive after thermosetting, and can suppress the raise of the melt viscosity of a film adhesive, and a wiring board It is especially preferable that it is 40-60 volume% from a viewpoint that it exists in the tendency to fully fill in the unevenness | corrugation on a board | substrate at the time of crimping | bonding and to ensure adhesiveness with a board | substrate.

The phenoxy resin (D) which concerns on this invention is a thermoplastic resin whose weight average molecular weight is 10000 or more. In the film adhesive obtained by using such a phenoxy resin (D), the tackiness and fragility in room temperature are eliminated.

As said phenoxy resin (D), it is preferable that weight average molecular weights are 30000-100000, and it is more preferable that it is 40000-70000. If the weight average molecular weight is less than the above lower limit, the supportability of the film adhesive is weak and the fragility tends to be strong, while if the weight average molecular weight is exceeded, the melt viscosity tends to be increased. Moreover, as said phenoxy resin (D), it is preferable that glass transition temperature (Tg) is 40-90 degreeC, and it is more preferable that it is 50-80 degreeC. If the glass transition temperature is less than the above lower limit, the film tackability at room temperature of the film adhesive tends to be stronger, and it is difficult to peel off from the cover film or dicing tape. On the other hand, if the glass transition temperature is exceeded, the melt viscosity of the film adhesive increases. When crimping | bonding to a wiring board, it cannot fully fill in the unevenness | corrugation on a board | substrate, and there exists a tendency for adhesiveness with a wiring board to fall.

Examples of the skeleton of the phenoxy resin (D) include bisphenol A type, bisphenol A / F type, bisphenol F type, bisphenol S type, bisphenol A / S type, cardo skeleton type, and the like. Since the structure is similar, bisphenol A is preferable from the viewpoint of good compatibility, low melt viscosity and good adhesiveness, and low melt viscosity can be reached in a preferable temperature range (for example, 60 to 120 ° C). It is preferable that it is bisphenol A / F type from a viewpoint that a film adhesive with which it is obtained, and it is preferable that it is a cardo skeleton type from a viewpoint that it has high heat resistance. Examples of such phenoxy resins (D) include bisphenol A type phenoxy resins obtained from bisphenol A and epichlorohydrin, bisphenol A, bisphenol A / F type phenoxy resins obtained from bisphenol F and epichlorohydrin. Can be. As said phenoxy resin (D), 1 type may be used individually or it may be used in combination of 2 or more type, For example, YP-50S (bisphenol-A phenoxy resin, Shin-Nika Epoxy Seizo Co., Ltd.) YP-70 (bisphenol A / F type phenoxy resin, Shin-Nika Epoxy Seijo Co., Ltd.), FX-316 (bisphenol F type phenoxy resin, Shin-Nika Epoxy Seijo Co., Ltd.), and FX You may use commercially available phenoxy resins, such as -280S (a cardio skeletal type | mold phenoxy resin and the product made by Shin-Nika Epoxy Seijo Co., Ltd.) as said phenoxy resin (D).

As said phenoxy resin (D), it is preferable that content in the composition for high thermal conductive film adhesives of this invention is 1-20 mass%, and it is more preferable that it is 3-10 mass%. If the content is less than the lower limit, the film tackiness of the film adhesive becomes stronger and it is difficult to peel off from the cover film or the dicing tape. On the other hand, if the content exceeds the upper limit, the melt viscosity of the film adhesive increases, so that the film can be crimped to the wiring board. At this time, it is not possible to sufficiently fill in the unevenness on the substrate, and the adhesion to the wiring substrate tends to be lowered.

As a composition for high thermal conductive film adhesives of this invention, the range which does not inhibit the effect of this invention other than the said epoxy resin (A), the said epoxy resin hardener (B), the said inorganic filler (C), and the said phenoxy resin (D). For example, you may contain additives, such as fillers other than the said inorganic filler (C), coupling agents, antioxidant, a flame retardant, a coloring agent, stress relief agents, such as butadiene type rubber and silicone rubber. In this invention, it is preferable to contain the coupling agent from a viewpoint that the interface of the said epoxy resin (A) and the said inorganic filler (B) can be reinforced, and the film adhesive which has the outstanding breaking strength and adhesiveness is obtained, As this coupling agent, the thing containing an amino group and an epoxy group is more preferable. Moreover, when it contains such an additive, it is preferable that the content is 3 mass% or less in the composition for high thermal conductive film adhesives of this invention.

Next, the high thermal conductive film adhesive of this invention is demonstrated. The high thermal conductive film adhesive of this invention is obtained by heat-drying the said composition for high thermal conductive film adhesives, It is characterized by the above-mentioned.

As a preferable embodiment of the manufacturing method of the high thermal conductive film adhesive of this invention, the method of apply | coating the varnish which melt | dissolved the said composition for high thermal conductive film adhesives in the solvent to the base material which carried out the release process, and heat-drying is mentioned, It is not particularly limited to this method.

As said solvent, a well-known solvent can be employ | adopted suitably, For example, aromatic hydrocarbons, such as toluene and xylene, ketones, such as methyl isobutyl ketone (MIBK) and methyl ethyl ketone (MEK), monoglyme, diglyme, etc. Ethers, mixtures thereof, and the like. As the release-treated substrate, a release treatment of a known substrate can be appropriately employed. For example, a release-treated polypropylene (PP), a release-treated polyethylene (PE), a release-treated polyethylene terephthalate (PET), and the like. Can be mentioned. As said coating method, a well-known method can be employ | adopted suitably, For example, a roll knife coater, a gravure coater, a die coater, a reverse coater, etc. are mentioned.

The said heat drying is performed at the temperature below the hardening start temperature of the said composition for high thermal conductive film adhesives. As such a temperature, it changes with kinds of resin to be used, and although it cannot say uniformly, it is preferable that it is 40-100 degreeC, for example, and it is more preferable that it is 60-100 degreeC. If the temperature is less than the lower limit, the amount of solvent remaining in the film adhesive tends to be increased, and the film tackiness tends to be strong. On the other hand, if the curing temperature is higher than the curing start temperature, the composition for the high thermal conductive film adhesive is cured and the adhesiveness of the film adhesive is increased. This tends to be lowered. Moreover, as time of the said heat drying, it is preferable that it is 10 to 60 minutes, for example.

As a high thermal conductive film adhesive of this invention obtained in this way, it is preferable that thickness is 10-150 micrometers. If the thickness is less than the lower limit, the irregularities on the surface of the wiring board cannot be sufficiently filled, and sufficient adhesion cannot be secured. On the other hand, if the thickness exceeds the upper limit, it is difficult to remove the solvent during manufacture. There exists a tendency for film tackiness to become strong much.

In the high thermal conductivity film-like adhesive agent of this invention, the melt viscosity in 80 degreeC observed when heated at the temperature increase rate of 20 degreeC / min from 20 degreeC by a rheometer can be 10000 Pa.s or less. As said melt viscosity, it is more preferable that it is 10-10000 Pa.s. If the melt viscosity is less than the lower limit, there is a tendency to contaminate other members due to resin flow, resin ridges, or the like when adhering to the wafer, while if the melt viscosity exceeds the upper limit, the film-like adhesive is a wiring board having a back surface or irregularities of the wafer. When adhering to the surface of the polymer, air tends to be made to enter the interface with the to-be-adhered body.

Since the high thermal conductive film adhesive of this invention has such melt viscosity characteristics, it can be crimped | bonded to a to-be-adhered body in a preferable temperature range (for example, 60-120 degreeC), and shows the outstanding adhesiveness with respect to a to-be-adhered body. . In addition, in this invention, melt viscosity is a value obtained by measuring the viscosity resistance of molten resin in predetermined temperature, and melt viscosity in 80 degreeC is a temperature range using a rheometer (brand name: RS150, Haake company make). The change in viscosity resistance in 20-100 degreeC and a temperature increase rate of 10 degree-C / min is measured, and the viscosity-resistance when temperature is 80 degreeC in the obtained temperature-viscosity resistance curve is called.

Moreover, the heat conductivity of the high thermal conductive film adhesive of this invention can be 1.0 W / (m * K) or more after thermosetting. As said thermal conductivity, it is more preferable that it is 1.5 W / (m * K) or more. If the thermal conductivity is less than the above lower limit, the generated heat tends to be difficult to be released to the outside of the package. Since the high thermal conductive film adhesive of the present invention exhibits such excellent thermal conductivity after curing, the heat dissipation efficiency to the outside of the semiconductor package is improved by bringing the high thermal conductive film adhesive of the present invention into close contact with a to-be-adhered body such as a wafer or a wiring board and thermal curing. Is improved. In addition, in this invention, the thermal conductivity of such a film adhesive after thermosetting is a thermal conductivity by a heat flow meter method (according to JIS-A1412) using a thermal conductivity measuring apparatus (brand name: HC-110, Eco Seiki Co., Ltd.). The measured value.

The said thermosetting is performed at the temperature more than the hardening start temperature of the said composition for high thermal conductive film adhesives. As such temperature, it changes with kinds of resin to be used, and although it cannot say uniformly, it is preferable that it is 120-180 degreeC, for example, and it is more preferable that it is 120-140 degreeC. If the temperature is less than the curing start temperature, the thermal curing does not proceed sufficiently, and the strength and thermal conductivity of the film adhesive after thermosetting tends to be lowered. On the other hand, if the upper limit is exceeded, the epoxy resin in the film adhesive, the curing agent, There exists a tendency for an additive etc. to volatilize and an adhesive layer becomes easy to foam. Moreover, as time of the said hardening process, it is preferable that it is 10 to 180 minutes, for example. Moreover, in the said thermosetting, it is more preferable to apply the pressure of about 0.1-10 Mpa.

Next, preferable embodiment of the manufacturing method of the semiconductor package of this invention is described in detail, referring drawings. In addition, the same code | symbol is attached | subjected to the same or corresponding element among the following description and drawings, and the overlapping description is abbreviate | omitted. 2A to 2E are schematic longitudinal cross-sectional views showing one preferred embodiment of each step of the method of manufacturing a semiconductor package of the present invention.

In the method for manufacturing a semiconductor package of the present invention, first, as shown in FIG. 2A, first, the high thermal conductive film-like adhesive of the present invention is thermally pressed onto the back surface of the wafer 1 on which the semiconductor circuit is formed, and thus the adhesive layer ( 2) form.

As the wafer 1, the wafer in which the semiconductor circuit was formed in the surface can be used suitably, For example, a silicon wafer, a SiC wafer, a GaS wafer, etc. are mentioned. As the adhesive layer 2, the high thermal conductive film adhesive of the said invention may be used individually by 1 layer, or may be laminated | stacked and used 2 or more layers.

As a method of forming such an adhesive layer 2 on the back surface of the wafer 1, a method of laminating the high thermal conductive film-like adhesive on the back surface of the wafer 1 can be appropriately employed, and the back surface of the wafer 1 can be employed. In the case where two or more layers are laminated after attaching the high thermal conductive film adhesive to the film, a method of sequentially laminating the high thermal conductive film adhesive until the desired thickness or a high thermal conductive film adhesive are laminated in advance to the desired thickness. After that, a method of adhering to the back surface of the wafer 1 may be mentioned. Moreover, it does not specifically limit as an apparatus used when forming such an adhesive bond layer 2 on the back surface of the wafer 1, For example, well-known apparatuses, such as a roll laminator, can be used suitably.

When the adhesive layer 2 is formed on the back surface of the wafer 1, the melt viscosity of the high thermal conductive film adhesive is not less than 10000 Pas or less, and is lower than the thermal curing start temperature of the high thermal conductive film adhesive. It is preferable to affix the said high thermal conductive film adhesive to the back surface of the wafer 1 in the temperature range. Such temperature conditions are different depending on the type of resin to be used, and although they cannot be said uniformly, it is preferable that they are 40-100 degreeC, for example, and it is more preferable that they are 40-80 degreeC. If the temperature is less than the lower limit, air tends to enter the interface between the adhesive layer 2 and the wafer 1, and when the adhesive layer 2 is laminated in two or more layers, the interlayer of the high thermal conductive film adhesive The adhesion tends to be insufficient. On the other hand, when it becomes more than thermosetting start temperature, the said high thermal conductive film adhesive will harden | cure and there exists a tendency for the adhesiveness at the time of adhering to a wiring board to fall. In addition, it is preferable that it is about 1 to 180 second as time of such thermocompression bonding.

In addition, when forming the adhesive bond layer 2 on the back surface of the wafer 1, it is preferable to apply the pressure of about 0.1-1 Mpa. If the pressure is less than the lower limit, it takes time to attach the adhesive layer 2 to the wafer 1, and there is a tendency that the generation of voids cannot be sufficiently prevented, while if the pressure is exceeded, the adhesive is pushed out. It tends to be out of control.

Subsequently, in the manufacturing method of the semiconductor package of this invention, after bonding the wafer 1 and the dicing tape 3 through the adhesive bond layer 2 as shown in FIG. 2B as a 2nd process, the wafer 1 and an adhesive agent are shown. By dicing the layer 2 simultaneously, the semiconductor element 4 provided with the wafer 1 and the adhesive bond layer 2 is obtained.

It does not restrict | limit especially as the dicing tape 3, A well-known dicing tape can be used suitably. Moreover, the apparatus used for dicing is not specifically limited, either, A well-known dicing apparatus can be used suitably.

In this invention, since the adhesive bond layer 2 consists of a high thermal conductive film adhesive obtained using the composition for high thermal conductive film adhesives of the said invention, the wear rate of the processing blade of a dicing apparatus is small enough. For example, a biaxial dicing blade (Z1: NBC-ZH2030-SE (DD), manufactured by DISCO Corporation / Z2: NBC) was formed by using an adhesive layer having a thickness of 20 µm consisting of a silicon wafer having a thickness of 100 µm and a high thermal conductive film adhesive. -ZH127F-SE (BB), manufactured by DISCO Co., Ltd., when dicing at a size of 3.0 × 3.0 mm with a dicing device (trade name: DDF-6340, manufactured by DISCO Co., Ltd.), wear rate of the machining blade at 20 m cut length It can be made into 5.0% or less. If the wear rate exceeds the upper limit, a problem arises that the high thermal conductive film-like adhesive is not fully cut during the dicing process. In addition, the wear rate and the replacement frequency of the working blade are also increased, causing problems of cost increase and productivity decrease.

Next, in the manufacturing method of the semiconductor package of this invention, as shown in FIG. 2C, the dicing tape 3 is detached from the adhesive bond layer 2, and the semiconductor element 4 and the wiring board 5 are removed. Thermocompression bonding is carried out through the adhesive layer (2).

As the wiring board 5, the board | substrate with which the semiconductor circuit was formed in the surface can be used suitably, For example, the thing in which electronic components, such as a resistance element and a capacitor, are mounted on the printed circuit board (PCB), various lead frames, and the board surface are mentioned. Can be. In addition, a plurality of semiconductor elements may be laminated through the adhesive layer 2 by using another semiconductor element as the wiring board 5.

The method of mounting the semiconductor device 4 on the wiring board 5 is not particularly limited, and the semiconductor device 4 is mounted on the surface of the wiring board 5 or the wiring board 5 by using the adhesive layer 2. The conventional method which can adhere to the electronic component mounted in the inside can be employ | adopted suitably. As such a mounting method, conventionally known heating such as a method of using a mounting technique using a flip chip bonder having a heating function from the top, a method of using a die bonder having a heating function only from the bottom, a method of using a laminator, A pressurization method is mentioned.

Thus, the high thermal conductivity film is formed in the unevenness | corrugation on the wiring board 5 produced by an electronic component by mounting the semiconductor element 4 on the wiring board 5 using the adhesive layer 2 which consists of the said high thermal conductive film adhesive. The semiconductor element 4 and the wiring board 5 can be held in close contact and fixed while following the phase adhesive.

When the wiring substrate 5 and the semiconductor element 4 are bonded together, the temperature at which the melt viscosity of the high thermal conductive film adhesive is 10000 Pa? S or less, and the temperature below the thermal curing start temperature of the high thermal conductive film adhesive. It is preferable to bond the wiring board 5 and the semiconductor element 4 at the temperature within the range. There exists a tendency for air to become difficult to enter the interface of the adhesive bond layer 2 and the wiring board 5 by adhering the wiring board 5 and the semiconductor element 4 on such temperature conditions. Such temperature conditions, time conditions, and pressure conditions are as described in the first step.

Next, in the manufacturing method of the semiconductor package of this invention, the said high thermal conductive film adhesive is thermosetted as a 4th process. There is no restriction | limiting in particular if it is more than the thermosetting start temperature of the said high thermal conductive film-like adhesive agent as said thermosetting temperature, It is different depending on the kind of resin to be used, Although it cannot say uniformly, it is 120-180 degreeC, for example. It is preferable and it is more preferable that it is 120-130 degreeC. If temperature is less than thermosetting start temperature, thermosetting does not fully advance, but the intensity | strength and thermal conductivity of the adhesive layer 2 tend to fall, and if it exceeds the said upper limit, the epoxy resin in a film adhesive, a hardening | curing agent, There exists a tendency for an additive etc. to volatilize and to foam easily. In addition, it is preferable that it is 10 to 180 minutes as time of the said hardening process, and in said thermosetting, it is more preferable to apply the pressure of about 0.1-10 Mpa. In the present invention, the adhesive layer 2 having excellent breaking strength and thermal conductivity is obtained by thermosetting the high thermal conductive film-like adhesive, whereby a semiconductor package in which the wiring board 5 and the semiconductor element 4 are firmly adhered can be obtained. have.

Next, in the manufacturing method of the semiconductor package of this invention, it is preferable to connect the wiring board 5 and the semiconductor element 4 through the bonding wire 6, as shown in FIG. 2D. There is no restriction | limiting in particular as such a connection method, A conventionally well-known method, for example, the method of a wire bonding system, the method of the Tape Automated Bonding (TAB) system, etc. can be employ | adopted suitably.

Subsequently, as shown in FIG. 2E, it is preferable to seal the wiring board 5 and the semiconductor element 4 with the sealing resin 7, and thus the semiconductor package 8 can be obtained. There is no restriction | limiting in particular as sealing resin 7, The well-known sealing resin which can be used for manufacture of a semiconductor package can be used. Moreover, it does not specifically limit also as a method of using the sealing resin 7, It is possible to employ | adopt a well-known method suitably.

According to the manufacturing method of the semiconductor package of this invention, since the interface with the wafer 1 and the unevenness | corrugation on the wiring board 5 can be filled by the adhesive bond layer 2 which consists of a high thermal conductive film-like adhesive, The semiconductor element 4 can be fixed to the wiring board 5 without generating a space between the adhesive layer 2 and between the wiring board 5 and the semiconductor element 4. Moreover, in the manufacturing method of the semiconductor package of this invention, since the high thermal conductivity film adhesive which uses the composition for high thermal conductivity film adhesives of this invention is used, the wear rate of a process blade can be reduced. In addition, the semiconductor package manufactured by the manufacturing method of the present invention has high heat dissipation efficiency to the outside of the package because the high thermal conductive film-like adhesive used for the adhesive layer exhibits excellent thermal conductivity after curing.

Example

EMBODIMENT OF THE INVENTION Hereinafter, although this invention is demonstrated further more concretely based on an Example and a comparative example, this invention is not limited to a following example. In addition, in each Example and the comparative example, thermal conductivity, melt viscosity, and the processing blade wear rate were measured by the method shown below, respectively.

(Measurement of thermal conductivity)

The obtained film adhesive is cut into square pieces 50 mm or more on one side, the sample cut out so that thickness might be 5 mm or more is laminated | stacked, and it puts on the disk shaped mold of diameter 50mm and thickness 5mm, and uses a compression press molding machine. After heating for 10 minutes at 150 ° C and a pressure of 2 MPa, the film-like adhesive was thermally cured by further heating at a temperature of 180 ° C for 1 hour in a dryer to obtain a disk-shaped test piece having a diameter of 50 mm and a thickness of 5 mm. About this test piece, the thermal conductivity (W / (m? K)) was measured by the heat flow meter method (based on JIS-A1412) using the thermal conductivity measuring apparatus (brand name: HC-110, Eco-Sekki Co., Ltd. product).

(Measurement of Melt Viscosity)

The obtained film adhesive is cut out in 2.5 * 2.5cm size, and the conditions for a temperature of 50 degreeC, a pressure of 0.3 Mpa, and an adhesion time of 10 second using a vacuum laminator apparatus (brand name: MVLP-500, the product made by Meiki Seisakusho) This obtained the test piece which laminated | stacked and adhered the film adhesive to the thickness of 300 micrometers. About this test piece, the change of the viscosity resistance in the temperature range 20-100 degreeC and a temperature increase rate of 10 degree-C / min is measured using a rheometer (RS150, Haake Co., Ltd.), and is obtained at 80 degreeC from the obtained temperature-viscosity resistance curve. Melt viscosity (Pa? S) was calculated.

(Measurement of machining blade wear rate)

First, the obtained film adhesive was attached to a dummy silicon wafer (8 inch size, thickness 100 micrometers) at the temperature of 70 degreeC, and a pressure of 0.3 Mpa using a manual laminator (brand name: FM-114, the product made by Techno Vision Co., Ltd.), and then the manual Dicing tape (brand name: G-11, Lintec Co., Ltd.) and dicing frame (brand name: DTF2-8-) on the surface side opposite to the dummy silicon wafer of a film adhesive at room temperature and pressure 0.3 Mpa using a laminator. 1H001, manufactured by DISCO, Inc. was attached to obtain a test piece. A dicing device (brand name: DFD-6340, provided with a biaxial dicing blade (Z1: NBC-ZH2030-SE (DD), manufactured by DISCO Corporation / Z2: NBC-ZH127F-SE (BB), manufactured by DISCO Corporation) was mounted on this test piece. DISCO Co., Ltd.) was dicing at a size of 3.0 × 3.0 mm. Set-up is performed before dicing (before processing) and 20 m cut time point (after processing), the blade edge protrusion amount is measured by non-contact type (laser type), and the blade wear amount after processing (blade edge protrusion amount before processing) -Blade blade protrusion amount after processing) was calculated. From this amount of wear, the following formula:

Machining blade wear rate (%) = (blade wear after machining) ÷ (blade blade protrusion before machining) x 100

The calculated blade wear rate (%) was calculated by

(Example 1)

First, triphenylmethane type epoxy resin (brand name: EPPN-501H, weight average molecular weight: 1000, softening point: 55 degreeC, solid, epoxy equivalent: 167, Nippon Kayaku Co., Ltd. make) 55 mass parts, bisphenol-A epoxy resin ( Brand name: YD-128, weight average molecular weight: 400, softening point: 25 degrees C or less, liquid, epoxy equivalent: 190, 49 parts by weight of Shin-Nika Epoxy Seijo Co., Ltd. and bisphenol A / F type phenoxy resin (brand name: YP-70, weight average molecular weight: 55000, Tg: 70 degreeC, 30 mass parts of Shin-Nika Epoxy Seijo Co., Ltd. weights are weighed, and 91 mass parts of methyl isobutyl ketones (MIBK) are used as a solvent in a 500 ml separable flask. Was stirred at a temperature of 110 ° C. for 2 hours to obtain a resin varnish. Subsequently, 225 parts by mass of this resin varnish was transferred to a 800 ml planetary mixer, and aluminum nitride (brand name: H grade, average particle diameter 1.1 µm, Mohs hardness 8, thermal conductivity 200 W / (m? K), manufactured by Tokuyama Corporation) 355 mass parts and 9 mass parts of imidazole-type hardening | curing agents (brand name: 2PHZ-PW, the Shikoku Kasei Co., Ltd. product) were added, and it stirred and mixed at room temperature for 1 hour, and vacuum-defoamed and obtained the mixing varnish. Subsequently, the obtained mixed varnish was apply | coated on the release processed PET film of 50 micrometers in thickness, and it heat-dried (holding for 10 minutes at 100 degreeC), and obtained the film adhesive of 20 micrometers in thickness. The melt viscosity of the obtained film adhesive, the processing blade wear rate, and the thermal conductivity after thermosetting were measured. The obtained result is shown in Table 1 with the composition of a film adhesive.

(Example 2)

Except having changed the usage-amount of aluminum nitride (brand name: H grade, an average particle diameter of 1.1 micrometers, Mohs hardness 8, heat conductivity 200W / (m * K), Tokuyama Co., Ltd.) to 489 mass parts, it carried out similarly to Example 1, and is in a film form. An adhesive was obtained. The measurement similar to Example 1 was performed about the obtained film adhesive. The obtained result is shown in Table 1 with the composition of a film adhesive.

(Example 3)

Except having changed the usage-amount of aluminum nitride (brand name: H grade, average particle diameter 1.1 micrometers, Mohs hardness 8, thermal conductivity 200W / (m * K), Tokuyama Co., Ltd.) to 267 mass parts, it carried out similarly to Example 1, and is in the film form An adhesive was obtained. The measurement similar to Example 1 was performed about the obtained film adhesive. The obtained result is shown in Table 1 with the composition of a film adhesive.

(Example 4)

Triphenylmethane type epoxy resin (brand name: EPPN-501H, weight average molecular weight: 1000, softening point: 55 degreeC, solid, epoxy equivalent: 167, Nihon Kayaku Co., Ltd.) cresol novolak type epoxy resin (brand name: ECON A film adhesive was obtained in the same manner as in Example 1, except that -1020-80, a weight average molecular weight: 1200, a softening point: 80 ° C, a solid, an epoxy equivalent: 200, and Nihon Kayaku Co., Ltd. were changed. The measurement similar to Example 1 was performed about the obtained film adhesive. The obtained result is shown in Table 1 with the composition of a film adhesive.

(Example 5)

Triphenylmethane type epoxy resin (brand name: EPPN-501H, weight average molecular weight: 1000, softening point: 55 degreeC, solid, epoxy equivalent: 167, Nihon Kayaku Co., Ltd.) Bisphenol-A epoxy resin (brand name: YD- A film adhesive was obtained in the same manner as in Example 1 except that 011, a weight average molecular weight: 1000, a softening point: 70 deg. C, a solid, an epoxy equivalent: 450, and a Shin-Nika Epoxy Seijo Co., Ltd. product were changed. The measurement similar to Example 1 was performed about the obtained film adhesive. The obtained result is shown in Table 1 with the composition of a film adhesive.

(Example 6)

Except having changed the usage amount of aluminum nitride (brand name: 5.0 micrometers aluminum nitride, an average particle diameter of 5.0 micrometers, Mohs hardness 8, thermal conductivity 200W / (m * K), Tokuyama Co., Ltd.) to 355 mass parts, it carried out similarly to Example 1 A film adhesive was obtained. The measurement similar to Example 1 was performed about the obtained film adhesive. The obtained result is shown in Table 1 with the composition of a film adhesive.

(Example 7)

Except having changed the usage amount of aluminum nitride (brand name: 5.0 micrometers aluminum nitride, an average particle diameter of 5.0 micrometers, Mohs hardness 8, heat conductivity 200W / (m * K), Tokuyama Co., Ltd.) to 489 mass parts, it carried out similarly to Example 1 A film adhesive was obtained. The measurement similar to Example 1 was performed about the obtained film adhesive. The obtained result is shown in Table 1 with the composition of a film adhesive.

(Example 8)

Except having changed the usage-amount of aluminum nitride (brand name: 5.0 micrometers aluminum nitride, an average particle diameter of 5.0 micrometers, Mohs hardness 8, heat conductivity 200W / (m * K), Tokuyama Co., Ltd.) to 267 mass parts, it carried out similarly to Example 1 A film adhesive was obtained. The measurement similar to Example 1 was performed about the obtained film adhesive. The obtained result is shown in Table 1 with the composition of a film adhesive.

(Comparative Example 1)

Circular silica (brand name: FB-3SDX, average particle diameter 3.0) in place of 355 mass parts of aluminum nitride (brand name: H grade, average particle diameter 1.1 micrometers, Mohs hardness 8, thermal conductivity 200W / (m? K), product made in Tokuyama) The film adhesive was obtained like Example 1 except having used 237 mass parts of micrometers, Mohs' hardness 7, heat conductivity 1.0W / (m * K), and Denki Kagaku Kogyo Co., Ltd. product. The measurement similar to Example 1 was performed about the obtained film adhesive. The obtained result is shown in Table 1 with the composition of a film adhesive.

(Comparative Example 2)

Magnesium oxide (brand name: cool filler, average particle diameter 40 micrometers instead of aluminum nitride (brand name: H grade, average particle diameter 1.1 micrometers, Mohs hardness 8, thermal conductivity 200W / (m? K), Tokuyama Co., Ltd.) 355 mass parts A film adhesive was obtained in the same manner as in Example 1 except that 385 parts by mass of Mohs hardness 5.5, thermal conductivity 13W / (m? K), and Tateho Kagaku Kogyo Co., Ltd. were used. The measurement similar to Example 1 was performed about the obtained film adhesive. The obtained result is shown in Table 1 with the composition of a film adhesive.

(Comparative Example 3)

Circular alumina (brand name: AX3-15R, average particle diameter 3.0) in place of 355 mass parts of aluminum nitride (brand name: H grade, average particle size 1.1 micrometers, Mohs hardness 8, thermal conductivity 200W / (m? K), product made in Tokuyama) The film adhesive was obtained like Example 1 except having used 409 mass parts of micrometers, Mohs' hardness 9, the thermal conductivity 36W / (m * K), and the Shin-Nitetsu Material Co., Ltd. product. The measurement similar to Example 1 was performed about the obtained film adhesive. The obtained result is shown in Table 1 with the composition of a film adhesive.

(Comparative Example 4)

Boron nitride (brand name: HP-01, average particle size 10 in place of aluminum nitride (brand name: H grade, average particle diameter 1.1 μm, Mohs hardness 8, thermal conductivity 200W / (m? K), manufactured by Tokuyama Co., Ltd.) 355 parts by mass A film adhesive was obtained in the same manner as in Example 1 except that 247 parts by mass of μm, Mohs' hardness 2, thermal conductivity 60W / (m? K), and Mizushima Kokintetsu Co., Ltd. were used. The measurement similar to Example 1 was performed about the obtained film adhesive. The obtained result is shown in Table 1 with the composition of a film adhesive.

As is clear from the results shown in Table 1, the high thermal conductive film-like adhesive obtained in Examples 1 to 5 has a sufficiently low melt viscosity at 80 ° C., the wear rate of the processing blade is sufficiently small, and exhibits excellent thermal conductivity after curing. It was confirmed.

As explained above, according to the composition for high thermal conductive film adhesives of this invention, the high thermal conductive film adhesive which is excellent in adhesiveness with a to-be-adhered body, the wear rate of a process blade is small enough, and exhibits the outstanding thermal conductivity after hardening is obtained. It becomes possible.

Moreover, according to the manufacturing method of the semiconductor package of this invention, since the interface with a wafer and the unevenness | corrugation on a wiring board can be filled by the adhesive bond layer which consists of a high thermal conductive film adhesive of this invention, a space is created between a wiring board and a semiconductor element. The semiconductor element can be fixed to the wiring board without generating it, and the wear rate of the processing blade can be reduced.

Further, the semiconductor package of the present invention has high heat dissipation efficiency to the outside of the package because the high thermal conductive film-like adhesive used in the adhesive layer exhibits excellent thermal conductivity after curing.

Therefore, the present invention is very useful as a technique for bonding between a semiconductor element and a wiring substrate in a semiconductor package or between a semiconductor element and a semiconductor element.

1: wafer 2: adhesive layer
3: dicing tape 4: semiconductor element
5: wiring board 6: bonding wire
7: sealing resin 8: semiconductor package

Claims (7)

An epoxy resin (A), an epoxy resin curing agent (B), an inorganic filler (C) and a phenoxy resin (D) are contained, and the said inorganic filler (C) is the following (i)?
(Iii) the average particle diameter is 0.1 to 5.0 µm,
(Ii) Mohs hardness is 1 to 8,
(Iii) The thermal conductivity satisfies the overall conditions of 30 W / (m? K) or more, and
Content of the said inorganic filler (C) is 30-70 volume%, The composition for high thermal conductive film adhesives characterized by the above-mentioned. The method of claim 1,
The said epoxy resin (A) is a triphenylmethane type epoxy resin represented by following formula (1), The composition for high thermal conductive film adhesives characterized by the above-mentioned.

[N in formula (1) represents the integer of 0-10] The method according to claim 1 or 2,
The inorganic filler (C) is a composition for high thermal conductive film adhesive, characterized in that the aluminum nitride. It is obtained by heat-drying the composition for high thermal conductive film adhesives of any one of Claims 1-3, and is 10-150 micrometers, The high thermal conductive film adhesive characterized by the above-mentioned. The method of claim 4, wherein
Melt viscosity in 80 degreeC observed when it heats with a rheometer at a temperature increase rate of 10 degreeC / min is 10000 Pa.s or less,
The thermal conductivity after thermosetting is 1.0 W / (m * K) or more, The high thermal conductivity film-like adhesive agent characterized by the above-mentioned. A first step of forming an adhesive layer by thermocompression bonding the high thermal conductive film-like adhesive according to claim 4 or 5 on the back surface of a wafer on which a semiconductor circuit is formed on the surface;
A second step of obtaining a semiconductor device having the wafer and the adhesive layer by simultaneously dicing the wafer and the adhesive layer after adhering the wafer and the dicing tape through the adhesive layer;
A third step of detaching the dicing tape from the adhesive layer and thermally compressing the semiconductor element and the wiring substrate through the adhesive layer;
And a fourth step of thermally curing the high thermal conductive film-like adhesive. It is obtained by the manufacturing method of the semiconductor package of Claim 6. The semiconductor package characterized by the above-mentioned.

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