CN104231961A - Cutting/chip bonding film - Google Patents
Cutting/chip bonding film Download PDFInfo
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- CN104231961A CN104231961A CN201410279953.6A CN201410279953A CN104231961A CN 104231961 A CN104231961 A CN 104231961A CN 201410279953 A CN201410279953 A CN 201410279953A CN 104231961 A CN104231961 A CN 104231961A
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- cutting blade
- bond layer
- cutting
- bonding film
- die bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Dicing (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
Abstract
The invention provides a cutting/chip bonding film which can restrain sharpness reduction of a cutting blade and can restrain burr generation. The invention relates to the cutting/chip bonding film which has a cutting blade wearing amount of 20-200 mu m in performing stepped cutting on a bare silicon wafer.
Description
Technical field
The present invention relates to dicing/die bonding film.
Background technology
In the operation of cutting semiconductor wafer, sometimes semiconductor crystal wafer is cut under the state being attached at cutting film.As cutting film, known have the cutting film (such as with reference to patent documentation 1) folding the structure of binder layer at layers on substrates.
But, when using cutting film to cut semiconductor crystal wafer, on line of cut, sometimes remain the foreign matter (being derived from the lapping rejects of base material) of burr shape.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2011-198976 publication
Summary of the invention
the problem that invention will solve
Patent Document 1 discloses the generation in order to reduce burr and use specific resin as the cutting film of the constituent of base material.But, when being cut in a large number under the state being pasted on semiconductor crystal wafer by the existing cutting film recorded in patent documentation 1 grade, cutting blade adheres to lapping rejects, produce and block, cause the sharpness of cutting blade to reduce.The reduction of the sharpness of cutting blade makes burr easily produce.
The object of the invention is to, solve foregoing problems, provide and can suppress the reduction of the sharpness of cutting blade and the dicing/die bonding film that can suppress the generation of burr.
for the scheme of dealing with problems
The present invention relates to a kind of dicing/die bonding film, it is by base material, the dicing/die bonding film that binder layer and bond layer stack gradually, wherein, under the state that aforementioned bond layer is pasted with the naked Silicon Wafer of thickness 100 μm, after aforementioned naked Silicon Wafer is cut 100m with penetraction depth 50 μm by the first cutting blade, along the otch of aforementioned first cutting blade, the wear loss of aforementioned second cutting blade when aforementioned naked Silicon Wafer and aforementioned bond layer to be cut off 100m with the penetraction depth at least arriving aforementioned adhesion oxidant layer by the second cutting blade is 20 ~ 200 μm, the tread of aforementioned second cutting blade is less than the tread of aforementioned first cutting blade, the otch formation condition of aforementioned first cutting blade is utilized to be: speed 50mm/sec, rotating speed 40000rpm, the cut-out condition of aforementioned second cutting blade is utilized to be: speed 50mm/sec, rotating speed 45000rpm.
Be more than 20 μm by wear loss, the reduction of the sharpness of cutting blade can be suppressed, the generation of burr can be suppressed.On the other hand, be less than 200 μm by wear loss, can prevent the life-span of cutting blade from becoming too short.
It should be noted that, define the wear loss of the second cutting blade when use 2 kinds of cutting blades substep cuts naked Silicon Wafer in the present invention, but dicing/die bonding film of the present invention also can play foregoing advantages when adopting other cutting methods such as single step cutting.
Preferably, the thickness/aforementioned substrates of aforementioned bond layer and the total thickness of aforementioned adhesion oxidant layer are 0.045 ~ 0.9.By being more than 0.045, grinding (ornamenting) effect of cutting blade can being obtained, the reduction of the sharpness of cutting blade can be suppressed.By being less than 0.9, can prevent the life-span of cutting blade from becoming too short.
Preferably, aforementioned bond layer comprises spherical alumina filler as abrasive, and the content of the aforementioned spherical alumina filler in aforementioned bond layer is 60 ~ 88 % by weight.By making to be only second to adamantine aluminum oxide containing hardness in bond layer, can grinding and cutting blade well.In addition, by make the shape of aluminum oxide be can be highly-filled spherical, good grinding effect can be obtained.And then, by making the content of spherical alumina filler be in above-mentioned scope, can grinding and cutting blade well, the reduction of sharpness can be prevented.
the effect of invention
According to the present invention, the reduction of the sharpness of cutting blade can be suppressed, and the generation of burr can be suppressed.
Accompanying drawing explanation
Fig. 1 is the schematic cross-section of the dicing/die bonding film of embodiment 1.
Fig. 2 is the schematic cross-section of the variation of the dicing/die bonding film of embodiment 1.
Fig. 3 is the figure of a part for the manufacturing process schematically showing semiconductor device.
(a) of Fig. 4 cuts the figure of the situation of naked Silicon Wafer for schematically showing the first cutting blade.(b) of Fig. 4 is for schematically showing the figure utilizing the first cutting blade to define the part in the cross section of the naked Silicon Wafer of otch.
(a) of Fig. 5 cuts off the figure of the situation of naked Silicon Wafer and bond layer for schematically showing the second cutting blade.(b) of Fig. 5 is for schematically showing the figure of the part in the cross section of the naked Silicon Wafer utilizing the second cutting blade to cut off.
description of reference numerals
1 base material
2 binder layers
3 bond layers
4 semiconductor crystal wafers
5 semi-conductor chips
6 adherends
7 bonding wires
8 sealing resins
10 dicing/die bonding films
11 cutting films
21 first cutting blades
22 otch
23 second cutting blades
24 naked Silicon Wafers
Embodiment
Below embodiment is shown, describe the present invention in detail, but the present invention is not limited to these embodiments.
[embodiment 1]
Fig. 1 is the schematic cross-section of the dicing/die bonding film of embodiment 1.Fig. 2 is the schematic cross-section of the variation of the dicing/die bonding film of embodiment 1.
As shown in Figure 1, dicing/die bonding film 10 has the structure being laminated with bond layer 3 on cutting film 11.Cutting film 11 stacked binder layer 2 and forming on base material 1, bond layer 3 is arranged on this binder layer 2.In addition, dicing/die bonding film 10 also can for being only formed with the formation of bond layer 3 as shown in Figure 2 in workpiece (semiconductor crystal wafer 4 etc.) attaching part.
Under the state being pasted with the naked Silicon Wafer of thickness 100 μm at the bond layer 3 of dicing/die bonding film 10, first cutting blade is with penetraction depth 50 μm by after naked Silicon Wafer cutting 100m, and the wear loss of the second cutting blade when naked Silicon Wafer and bond layer 3 being cut off 100m along the otch of the first cutting blade, the second cutting blade with the penetraction depth at least arriving binder layer 2 is more than 20 μm.By being more than 20 μm, the reduction of the sharpness of cutting blade can be suppressed, the generation of burr can be suppressed.From the view point of the reduction of the sharpness of suppression cutting blade, wear loss is more large more preferred.Therefore, wear loss is preferably more than 30 μm, is more preferably more than 50 μm.
On the other hand, from the view point of the life-span of cutting blade, wear loss is more little more preferred.Specifically, wear loss is less than 200 μm, is preferably less than 150 μm, is more preferably less than 120 μm.
Naked Silicon Wafer refers to, carries out the Silicon Wafer of the state before the processing treatment such as pattern formation.As the first cutting blade and the second cutting blade, the blade embedding diamond particles can be used in resin aptly.
It should be noted that, the tread of the second cutting blade is less than the tread of the first cutting blade.In addition, carry out under utilizing the otch of the first cutting blade to be formed in the condition of speed of feed 50mm/sec, rotating speed 40000rpm.Utilize the second cutting blade be breaking at the condition of speed of feed 50mm/sec, rotating speed 45000rpm under carry out.
Wear loss can be measured by the method recorded in embodiment.
(bond layer 3)
Bond layer 3 include, for example out the layer formed by thermoplastic resin and heat-curing resin, more specifically, include, for example out the layer formed by epoxy resin, resol and acrylic resin.
About aforementioned epoxy resins, as long as the epoxy resin conventional as adhesive composite is just not particularly limited, such as, can use the difunctional epoxy resin of bisphenol A-type, bisphenol-f type, bisphenol S type, bmminated bisphenol-A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorenes type, phenol novolak type, ortho cresol novolak type, three hydroxyphenyl methane types, four hydroxy phenyl ethane types etc. or the epoxy resin of polyfunctional epoxy resin or glycolylurea type, triglycidyl group isocyanuric acid ester type or glycidic amine type etc.These can be used alone or in combination two or more to use.In the middle of these epoxy resin, in the present invention, particularly preferably there is the epoxy resin of the aromatic rings such as phenyl ring, cyclohexyl biphenyl, naphthalene nucleus.Specifically, include, for example out phenolic resin varnish type epoxy resin, the phenol novolak type epoxy resin containing xylylene skeleton, the phenolic resin varnish type epoxy resin containing biphenyl backbone, bisphenol A type epoxy resin, bisphenol f type epoxy resin, tetramethyl biphenyl phenol-type epoxy resin, triphenylmethane type epoxy resin etc.This is because these epoxy resin are imbued with the reactivity with the resol as solidifying agent, the excellences such as thermotolerance.It should be noted that, the ionic impurity etc. of epoxy resin less containing corrosion resistant semiconductor element.
The weight-average molecular weight of aforementioned epoxy resins is preferably in the scope of 300 ~ 1500, is more preferably in the scope of 350 ~ 1000.During Weight-average molecular quantity not sufficient 300, the physical strength of the die bonding film 3 sometimes after thermofixation, thermotolerance, wet fastness reduce.On the other hand, when being greater than 1500, the die bonding film sometimes after thermofixation becomes rigidity and becomes fragile.It should be noted that, the weight-average molecular weight in the present invention refers to, utilizes the polystyrene conversion value that gel permeation chromatography (GPC) use obtains based on the typical curve of polystyrene standard.
And then, aforementioned resol plays a role as the solidifying agent of aforementioned epoxy resins, include, for example out the polycarboxylated styrenes etc. such as novolak phenolics, resol type phenol resin, poly(4-hydroxystyrene) such as phenol resol resins, phenol biphenyl resin, phenol aralkyl resin, cresol novolac resin, t-butylphenol novolac resin, nonylphenol novolac resin.These can be used alone or in combination two or more to use.In the middle of these resol, preferred phenol resol resins, phenol aralkyl resin.This is because the connection reliability of semiconductor device can be improved.
The weight-average molecular weight of aforementioned resol is preferably in the scope of 300 ~ 1500, is more preferably in the scope of 350 ~ 1000.During Weight-average molecular quantity not sufficient 300, the thermofixation of aforementioned epoxy resins is sometimes insufficient and can not get sufficient obdurability.On the other hand, when weight-average molecular weight is greater than 1500, viscosity uprises, and operability when die bonding film makes sometimes reduces.
About the compounding ratio of aforementioned epoxy resins and resol, such as, with relative to epoxy group(ing) 1 equivalent in aforementioned epoxy resins composition, the hydroxyl in resol is that to carry out compounding be suitable to the mode of 0.5 equivalent ~ 2.0 equivalent.Be preferably 0.8 equivalent ~ 1.2 equivalent.That is, this is because, when both compounding ratios depart from aforementioned range, cannot carry out sufficient curing reaction, the characteristic of epoxy resin cured product is easily deteriorated.
Epoxy resin in bond layer 3 and the total content of resol are preferably more than 5 % by weight, are more preferably more than 9 % by weight.When being more than 5 % by weight, by the crosslinking reaction of epoxy resin and resol, reflux-resisting welded reliability can be obtained.In addition, the epoxy resin in bond layer 3 and the total content of resol are preferably less than 40 % by weight, are more preferably less than 30 % by weight.When being below 40 % by weight, the fragility of bond layer 3 can be suppressed.Epoxy resin and resol are generally low molecular weight compositions, and flexibility is at room temperature low, when therefore total content is too much, there is bond layer 3 and become crackly tendency.
As foregoing acrylic resin, be not particularly limited, in the present invention, preferably contain carboxy acrylic analog copolymer, containing epoxy group(ing) acrylic copolymer.As the aforementioned monomer containing using in carboxy acrylic analog copolymer, acrylic or methacrylic acid can be listed.The content of acrylic or methacrylic acid with acid number be 1 ~ 4 scope in mode regulate.Its remainder can use methyl acrylate, methyl methacrylate etc. to have the mixture of the alkyl acrylate of the alkyl of carbon number 1 ~ 8, alkyl methacrylate, vinylbenzene or vinyl cyanide etc.Wherein, particularly preferably (methyl) ethyl propenoate and/or (methyl) butyl acrylate.Mixture ratio is preferably considered the second-order transition temperature (Tg) of foregoing acrylic resin described later and adjusts.In addition, as polymerization process, be not particularly limited, such as, can adopt the existing known methods such as solution polymerization process, mass polymerization, suspension polymerization, emulsion polymerization.
In addition, as can with other monomer component of aforementioned monomer composition copolymerization, be not particularly limited, include, for example out vinyl cyanide etc.These can the consumption of monomer component of copolymerization be preferably in the scope of 1 % by weight ~ 20 % by weight relative to whole monomer component.By containing other monomer component in this numerical range, the improvement of force of cohesion, cementability etc. can be realized.
The content of the acrylic resin in bond layer 3 is preferably more than 2 % by weight, is more preferably more than 5 % by weight.When being more than 2 % by weight, easily keep the shape as film.In addition, the content of acrylic resin is preferably less than 15 % by weight, is more preferably less than 10 % by weight.When being below 15 % by weight, the good concavo-convex tracing ability under high temperature can be obtained.
Bond layer 3 comprises abrasive usually.By making to contain abrasive in bond layer 3, (ornamenting) cutting blade surface can be ground, the reduction of the sharpness of cutting blade can be prevented.
As abrasive, preferred spherical alumina packing.Aluminum oxide has and is only second to adamantine hardness, therefore by making containing aluminum oxide in bond layer 3, and can grinding and cutting blade well.In addition, when aluminum oxide is low loading level, grinding effect is little, but by make the shape of aluminum oxide be can be highly-filled spherical, good grinding effect can be obtained.
The median size of spherical alumina filler is preferably more than 0.3 μm, is more preferably more than 0.5 μm.By being more than 0.3 μm, the concavo-convex tracing ability under high temperature can be obtained, and highly-filledly become possibility.In addition, the median size of spherical alumina filler is preferably less than 15 μm, is more preferably less than 10 μm.By being less than 15 μm, the slimming of bond layer 3 becomes possibility.
The median size of spherical alumina filler is the value utilizing the size-grade distribution meter of such as spectrophotometric formula (HORIBA manufactures, device name: LA-910) to obtain.
The maximum particle diameter of spherical alumina filler is preferably less than 40 μm.When being below 40 μm, slimming can be tackled.The thickness requirement slimming year by year of bond layer 3, below 40um becomes main flow, and the filler that particle diameter is larger is inappropriate.
Spherical alumina filler has preferably carried out processing (pre-treatment) with silane coupling agent.Thus, the dispersiveness of spherical alumina filler becomes good, and the highly-filled of spherical alumina filler changes into as possibility.
Silane coupling agent is the compound in molecule with hydrolization group and organo-functional group.
As hydrolization group, include, for example out the alkoxyl group of the carbon number such as methoxyl group, oxyethyl group 1 ~ 6, acetoxyl group, 2-methoxy ethoxy etc.Wherein, the reason fast from hydrolysis rate, silane coupled process can be carried out well, preferred methoxyl group.
As organo-functional group, vinyl, epoxy group(ing), styryl, methacryloyl, acryl, amino, urea groups, sulfydryl, thioether group, isocyanate group etc. can be listed.Wherein, from the dispersiveness that can improve spherical alumina filler, and the reason that can improve the mobility of bond layer 3 is set out, preferred epoxy group(ing), methacryloyl.
As silane coupling agent, include, for example out vinyltrimethoxy silane, vinyltriethoxysilane etc. containing vinyl silicane coupling agent; 2-(3,4-epoxycyclohexyl) ethyl trimethoxy silane, 3-glycidoxypropyl dimethoxysilane, 3-glycidoxypropyltrime,hoxysilane, 3-glycidoxypropyl diethoxy silane, 3-glycidoxypropyl group triethoxyl silane etc. are containing epoxy silane coupling (epoxy silane system silane coupling agent); Styryl silane coupling agent is contained to styryl Trimethoxy silane etc.; 3-methacryloyloxypropyl methyl dimethoxysilane, 3-methacryloxypropyl trimethoxy silane, 3-methacryloyloxypropyl methyl diethoxy silane, 3-methacryloxypropyl etc. are containing methacryloyl silane coupling agent (methacryloyl base silane system silane coupling agent); 3-acryloxypropyl Trimethoxy silanes etc. are containing acryl silane coupling agents; N-2-(amino-ethyl)-3-amino propyl methyl dimethoxysilane, N-2-(amino-ethyl)-3-TSL 8330,3-TSL 8330, APTES, 3-triethoxysilyl-N-(1,3-dimethyl-butylidene) propyl group amine, N-phenyl-3-TSL 8330, N-(vinyl benzyl)-2-amino-ethyl-3-TSL 8330 etc. are containing amino silicane coupling agent; 3-ureidopropyltriethoxysilane etc. are containing ureido silane coupling agent; 3-mercaptopropyi methyl dimethoxysilane, 3-mercaptopropyi Trimethoxy silane etc. are containing mercaptosilane coupling agents; The Sulfide-containing Hindered base silane coupling agents such as two (triethoxysilylpropyltetrasulfide) tetrasulfide; 3-isocyanic ester propyl-triethoxysilicanes etc. are containing isocyanato silanes coupling agent etc.
As the method with silane coupling agent process spherical alumina filler, be not particularly limited, can list: in a solvent by damp process that spherical alumina filler mixes with silane coupling agent; In the gas phase spherical alumina filler silane coupling agent is carried out the drying process etc. processed.
The treatment capacity of silane coupling agent is not particularly limited, relative to 100 weight part spherical alumina fillers, preferably processes with 0.05 ~ 5 weight part silane coupling agent.
The content of the spherical alumina filler in bond layer 3 is preferably more than 60 % by weight, is more preferably more than 70 % by weight, more preferably more than 75 % by weight.When being more than 60 % by weight, can grinding and cutting blade well, the reduction of sharpness can be prevented.The content of the spherical alumina filler in bond layer 3 is preferably less than 90 % by weight, is more preferably less than 88 % by weight.When being below 90 % by weight, can prevent the life-span of cutting blade from becoming too short.
Bond layer 3 can also aptly containing compounding dose conventional in the manufacture of bond layer except aforesaid ingredients, such as linking agent etc.
The manufacture method of bond layer 3 is not particularly limited, preferably includes the method for following operation: the operation making the adhesive composite solution containing aforementioned each composition (such as, thermoplastic resin, heat-curing resin and spherical alumina filler); Filter adhesive composite solution, obtain the operation of filtrate; And, filtrate is applied on base material barrier film after forming coated film, by the operation of coated film drying.
As the solvent used in adhesive composite solution, be not particularly limited, preferably aforementioned each uniform composition can be dissolved, the organic solvent of mixing or dispersion.Such as, ketone series solvent, toluene, the dimethylbenzene etc. such as dimethyl formamide, N,N-DIMETHYLACETAMIDE, N-Methyl pyrrolidone, acetone, methylethylketone, pimelinketone can be listed.
The mesh of the filtering material used in filtration is preferably less than 50 μm.Thereby, it is possible to make the maximum particle diameter of spherical alumina filler be less than 50 μm, can the aggregation of inhibited oxidation Al filler be mixed in bond layer 3.
As base material barrier film, polyethylene terephthalate (PET), polyethylene, polypropylene, the plastics film having carried out surface coated with strippers such as fluorine series stripping agent, chain alkyl acrylate series stripping agents or paper etc. can be used.As the coating process of adhesive composite solution, include, for example out roller coat, silk screen coating, rotogravure application etc.In addition, the drying conditions of coated film is not particularly limited, such as, can carries out under drying temperature 70 ~ 160 DEG C, 1 ~ 5 minute time of drying.
The thickness of bond layer 3 is not particularly limited, is preferably more than 5 μm.When being more than 5 μm, the reduction of the sharpness of cutting blade can be suppressed.In addition, the thickness of bond layer 3 is preferably less than 100 μm, is more preferably less than 50 μm.When being below 100 μm, can prevent the life-span of cutting blade from becoming too short.
(base material 1)
Base material 1 is as the intensity parent of dicing/die bonding film 10.As base material 1, include, for example out Low Density Polyethylene, straight-chain polyethylene, medium-density polyethylene, high density polyethylene(HDPE), ultra-low density polyethylene, atactic copolymerized polypropene, block copolymerization polypropylene, homo-polypropylene, polybutene, the polyolefine such as polymethylpentene, vinyl-vinyl acetate copolymer, ionomer resin, ethene-(methyl) acrylic copolymer, ethene-(methyl) acrylate is (random, alternately) multipolymer, ethylene-butene copolymer, ethylene-hexene co-polymers, urethane, polyethylene terephthalate, the polyester such as PEN, polycarbonate, polyimide, polyether-ether-ketone, polyimide, polyetherimide, polymeric amide, fully aromatic polyamide, polyphenylene sulfide, aramid fiber (paper), glass, woven fiber glass, fluoro-resin, polyvinyl chloride, polyvinylidene dichloride, cellulose-based resin, silicone resin, metal (paper tinsel), paper etc.Wherein, polyethylene, polypropylene etc. due to water-intake rate little, so be preferred as base material 1.
The surface of base material 1 can in order to improve and the adaptation, retentivity etc. of adjacent layer and implements conventional surface treatment, the process of the chemical or physics such as such as chromic acid process, ozone exposure, fire exposure, high-voltage electric shock exposure, the process of ionizing irradiation line, utilizes the coating process of silane coupling agent (such as aftermentioned adhesive substance).
Base material 1 can material that suitably choice for use is of the same race or not of the same race, can use material blended for many kinds of substance as required.
The thickness of base material 1 is not particularly limited, can suitably determines, be generally about 60 ~ 150 μm.
(binder layer 2)
As the tackiness agent forming binder layer 2, from the view point of the clean cleaning etc. utilizing the organic solvent such as ultrapure water, alcohol of electronic unit of pollution abstaining from semiconductor crystal wafer or glass etc., the preferably acrylic adhesives of polymkeric substance based on acrylic polymers.
As foregoing acrylic polymkeric substance, include, for example out use (methyl) alkyl acrylate (such as, methyl esters, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, secondary butyl ester, the tert-butyl ester, pentyl ester, isopentyl ester, own ester, heptyl ester, monooctyl ester, 2-ethylhexyl, different monooctyl ester, the ninth of the ten Heavenly Stems ester, the last of the ten Heavenly stems ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, cetyl ester, stearyl, the carbon number 1 ~ 30 of the alkyl such as eicosyl ester, the particularly straight-chain of carbon number 4 ~ 18 or the alkyl ester etc. of branched) and (methyl) acrylate base ester is (such as, ring pentyl ester, cyclohexyl etc.) in the one kind or two or more acrylic polymers etc. as monomer component.It should be noted that, (methyl) acrylate refers to acrylate and/or methacrylic ester, and (methyl) of the present invention all refers to same implication.
Foregoing acrylic polymkeric substance, for the object of the improvement of force of cohesion, thermotolerance etc., also can comprise the unit corresponding with other monomer component stating (methyl) alkyl acrylate or cycloalkyl ester copolymerization in front of energy as required.As this monomer component, include, for example out: the carboxyl group-containing monomer such as vinylformic acid, methacrylic acid, (methyl) carboxy ethyl acrylate, (methyl) carboxypentyl acrylate, methylene-succinic acid, toxilic acid, fumaric acid, β-crotonic acid; The anhydride monomers such as maleic anhydride, itaconic anhydride; The hydroxyl monomers such as (methyl) vinylformic acid 2-hydroxyl ethyl ester, (methyl) vinylformic acid 2-hydroxypropyl acrylate, (methyl) vinylformic acid 4-hydroxy butyl ester, the own ester of (methyl) vinylformic acid 6-hydroxyl, (methyl) vinylformic acid 8-hydroxyl monooctyl ester, (methyl) vinylformic acid 10-hydroxyl ester in the last of the ten Heavenly stems, (methyl) vinylformic acid 12-hydroxylauric ester, (methyl) vinylformic acid (4-Hydroxymethyl-cyclo-hexyl) methyl esters; Styrene sulfonic acid, allyl sulphonic acid, 2-(methyl) acrylamide-2-methyl propane sulfonic, (methyl) acrylamide propane sulfonic acid, (methyl) sulfopropyl acrylate, (methyl) propane sulfonic acid etc. are containing sulfonic group monomer; The phosphorous acid-based monomers such as 2-hydroxylethyl acyl phosphate; Acrylamide, vinyl cyanide etc.The monomer component of these energy copolymerization can use one kind or two or more.The consumption of the monomer of these energy copolymerization is preferably less than 40 % by weight of whole monomer component.
And then foregoing acrylic polymkeric substance also can comprise multi-functional monomer etc. as comonomer composition to carry out crosslinked as required.As this multi-functional monomer, include, for example out hexylene glycol two (methyl) acrylate, (gathering) ethylene glycol bisthioglycolate (methyl) acrylate, (gathering) propylene glycol two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, tetramethylolmethane two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylolmethane three (methyl) acrylate, Dipentaerythritol six (methyl) acrylate, epoxy (methyl) acrylate, polyester (methyl) acrylate, carbamate (methyl) acrylate etc.These multi-functional monomers also can use one kind or two or more.The consumption of multi-functional monomer is preferably less than 30 % by weight of whole monomer component from the viewpoint of adhesion characteristic etc.
The preparation example of foregoing acrylic polymkeric substance is as carried out the suitable mode such as mixture applying soln polymerization methods, emulsion polymerization way, mass polymerization mode, suspension polymerization mode of one kind or two or more element monomers.Binder layer 2 is from the composition contained preventing the viewpoints such as wafer contamination from preferably inhibit low molecular weight substance, from the above point of view, using weight-average molecular weight be preferably the acrylic polymers of more than 300,000, particularly 400,000 ~ 3,000,000 as main component, tackiness agent therefore also can be made to be suitable crosslink type based on internal crosslinking mode, outside crosslinking method etc.
In addition, in order to control the cross-linking density of binder layer 2, such as, can adopt: the external crosslinker using polyfunctional isocyanate's based compound, multi-functional epoxy's based compound, trimeric cyanamide based compound, metal-salt based compound, metallo-chelate based compound, aminoresin based compound or superoxide etc. suitable is to carry out the mode of crosslinking Treatment; Mixing has the low molecular compound of more than 2 carbon-carbon double bonds and utilizes the irradiation of energy-ray etc. to carry out the suitable mode such as the mode of crosslinking Treatment.Use external crosslinker time, its consumption by with to carry out the base polymer be cross-linked balance so that as tackiness agent use and suitably determine.Usually, relative to 100 weight part aforementioned base polymkeric substance, preferably following about compounding 5 weight parts, preferred compounding 0.1 ~ 5 weight part further.In addition, in tackiness agent, as required, except aforesaid ingredients, also the additives such as various tackifier, antiager can be used.
As the tackiness agent forming binder layer 2, radiation curable tackiness agent is suitable.As radiation curable tackiness agent, the radiation curable tackiness agent of addition type of oligopolymer composition of the monomer component of compounding radiation curing in aforementioned adhesion agent, radiation curing can be exemplified.
As the monomer component of compounding radiation curing, include, for example out carbamate (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylol methane four (methyl) acrylate, tetramethylolmethane three (methyl) acrylate, tetramethylolmethane four (methyl) acrylate, Dipentaerythritol monohydroxy five (methyl) acrylate, Dipentaerythritol six (methyl) acrylate, BDO two (methyl) acrylate etc.These monomer components can combinationally use one kind or two or more.
In addition, the oligopolymer composition of radiation curing can list the various oligopolymer such as polyurethane series, polyethers system, Polyester, polycarbonate-based, polyhutadiene system, its molecular weight be about 100 ~ 30000 scope be suitable.The monomer component of radiation curing, the compounding amount of oligopolymer composition suitably can determine the amount of the bounding force that can reduce binder layer according to the kind of aforementioned adhesion oxidant layer.Usually, relative to base polymer 100 weight part such as acrylic polymers forming tackiness agent, be such as 5 weight part ~ 500 weight parts, be preferably 70 weight part ~ 150 weight parts about.
In addition, as radiation curable tackiness agent, except the radiation curable tackiness agent of aforementioned addition type, also can list: be used in polymer lateral chain or main chain or the radiation curable tackiness agent of the inherent type of polymkeric substance based on material that main chain terminal has a carbon-carbon double bond.The radiation curable tackiness agent of inherent type does not need containing the oligopolymer composition as low molecular composition etc. or contains seldom, therefore oligopolymer composition etc. can not through time move in tackiness agent, the binder layer of stable Rotating fields can be formed, so preferably.
The aforementioned base polymer with carbon-carbon double bond can use without particular limitation to be had carbon-carbon double bond and has fusible material.As this base polymer, be preferably the polymkeric substance of basic framework with acrylic polymers.As the basic framework of acrylic polymers, aforementioned illustrative acrylic polymers can be listed.
The method importing carbon-carbon double bond in subtend foregoing acrylic polymkeric substance is not particularly limited, and can adopt various method, when carbon-carbon double bond imports from polymer lateral chain, in molecular designing easily.Such as, following method can be listed: making acrylic polymers and the monomer copolymerization with functional group in advance, then can carry out condensation or addition reaction with the compound of the functional group of this functional group reactions and carbon-carbon double bond under the state of radiation curing maintaining carbon-carbon double bond by having.
As the example of the combination of these functional groups, carboxylic acid group and epoxy group(ing), carboxylic acid group and '-aziridino, hydroxyl and isocyanate group etc. can be listed.In the middle of the combination of these functional groups, from the easiness of reactive tracing, the combination of hydroxyl and isocyanate group is suitable.In addition, as long as the combination that the aforementioned acrylic polymers with carbon-carbon double bond of the combination producing of these functional groups is such can be utilized, then functional group can be arranged in any side of acrylic polymers and aforesaid compound, in aforementioned preferred combination, the situation that acrylic polymers has hydroxyl, aforesaid compound has isocyanate group is suitable.Now, as the isocyanate compound with carbon-carbon double bond, include, for example out methacryloyl isocyanate, 2-methacryloxyethyl isocyanic ester, a pseudoallyl-alpha, alpha-dimethylbenzyl isocyanic ester etc.In addition, as acrylic polymers, can use the material of the copolymerization such as ether based compound such to aforementioned illustrative hydroxyl monomer, 2-hydroxyethyl vinylethers, 4-hydroxy butyl vinyl ether, diethylene glycol monovinyl base ether.
The radiation curable tackiness agent of aforementioned inherent type can be used alone the aforementioned base polymer (particularly acrylic polymers) with carbon-carbon double bond, also can not make the photopolymerizable compound such as monomer component, oligopolymer composition of the level of characteristic degradation compounding aforementioned radiation line solidified nature.The compounding amount of this photopolymerizable compound, relative to 100 parts by weight of base polymkeric substance, is generally in the scope of below 30 weight parts, is preferably in the scope of 0 ~ 10 weight part.
Preferably, in aforementioned radiation line curing adhesive, when utilizing ultraviolet etc. to be cured containing Photoepolymerizationinitiater initiater.
As the tackiness agent forming binder layer 2, the active energy ray curable tackiness agent recorded in Japanese Unexamined Patent Publication 2010-129701 publication can be used especially aptly.Foregoing active energy ray-curable tackiness agent comprises following acrylic polymers A.
Acrylic polymers A: for having the acrylic polymers of following structure, make by the CH comprising more than 50 % by weight
2acrylate shown in=CHCOOR (in formula, R is the alkyl that carbon number is 6 ~ 10) and 10 % by weight ~ 30 % by weight hydroxyl monomer and the polymkeric substance do not obtained containing the monomer composition of carboxyl group-containing monomer, carry out the structure of addition reaction with the isocyanate compound with free-radical reactive carbon-carbon double bond being 50mol% ~ 95mol% relative to hydroxyl monomer.
In acrylic polymers A, use CH
2alkyl acrylate (being sometimes referred to as " vinylformic acid C6-10 alkyl ester ") shown in=CHCOOR (in formula, R is the alkyl of carbon number 6 ~ 10).When the carbon number of the alkyl of alkyl acrylate is less than 6, the excessive and pick of peeling force reduces sometimes.On the other hand, when the carbon number of the alkyl of alkyl acrylate is more than 10, reduce with the cementability of bond layer 3 or adaptation, its result, chip occurs when cutting sometimes and disperses.As vinylformic acid C6-10 alkyl ester, particularly preferably the carbon number of alkyl is the alkyl acrylate of 8 ~ 9, and wherein, 2-EHA, Isooctyl acrylate monomer are best.
As vinylformic acid C6-10 alkyl ester, its content, relative to monomer component total amount, is preferably more than 50 % by weight (wt%), more preferably 70wt% ~ 90wt%.When the content of vinylformic acid C6-10 alkyl ester is relative to monomer component insufficient total amount 50wt%, peeling force becomes excessive and pick reduction sometimes.
The content of hydroxyl monomer, relative to monomer component total amount, is preferably in the scope of 10wt% ~ 30wt%, is more preferably in the scope of 15wt% ~ 25wt%.When the content of hydroxyl monomer is relative to monomer component insufficient total amount 10wt%, the postradiation crosslinked deficiency of active energy beam, produces the reduction of pick sometimes, produces cull to the semi-conductor chip of band bond layer 3.On the other hand, the content of hydroxyl monomer relative to monomer component total amount more than 30wt% time, the polarity of tackiness agent uprises, and uprises with the interaction of bond layer 3, and thus pick reduces.
Acrylic polymers A also can comprise the unit corresponding with other monomer component as required.
In acrylic polymers A, use the isocyanate compound (being sometimes referred to as " containing double bond isocyanate compound ") with free-radical reactive carbon-carbon double bond.That is, acrylic polymers preferably has the polymkeric substance making to be obtained by monomer compositions such as foregoing acrylates, hydroxyl monomers and the structure of carrying out addition reaction containing double bond isocyanate compound.Therefore, acrylic polymers preferably has free-radical reactive carbon-carbon double bond in its molecular structure.Thus, the active energy ray curable binder layer (ultraviolet-curing adhesive layer etc.) utilizing the irradiation of active energy beam (ultraviolet etc.) to be cured can be made, the peeling force of bond layer 3 and binder layer 2 can be reduced.
As containing double bond isocyanate compound; include, for example out methacryloyl isocyanate, propenoyl isocyanate, 2-methacryloxyethyl isocyanic ester, 2-acryloyloxyethyl isocyanate, a pseudoallyl-alpha, alpha-dimethylbenzyl isocyanic ester etc.Can be used alone or in combination of two kinds or more containing double bond isocyanate compound.
Containing the consumption of double bond isocyanate compound relative to hydroxyl monomer, be preferably in the scope of 50mol% ~ 95mol%, be more preferably in the scope of 75mol% ~ 90mol%.Containing the consumption of double bond isocyanate compound relative to hydroxyl monomer less than 50mol% time, the postradiation crosslinked deficiency of active energy beam, produces the reduction of pick, cull to the semi-conductor chip of band bond layer 3 sometimes.
In addition, in active energy ray curable tackiness agent, in order to adjust bounding force, the postradiation bounding force of active energy beam of active energy beam pre-irradiation, also suitably can use external crosslinker.As the concrete means of outside cross-linking method, the method that so-called linking agents such as adding polyisocyanate compound, epoxy compounds, aziridine cpd, melamine series linking agent makes it react can be listed.Use external crosslinker time, its consumption according to carry out the base polymer be cross-linked balance so that as tackiness agent use and suitably determine.The consumption of external crosslinker, relative to 100 weight part aforementioned base polymkeric substance, is generally below 20 weight parts (being preferably 0.1 weight part ~ 10 weight part).And then, in active energy ray curable tackiness agent, as required, except aforesaid ingredients, also can the additive such as compounding existing known various tackifier, antiager, whipping agent.
The thickness of binder layer 2 is not particularly limited, can suitably determines, be generally about 5 ~ 200 μm.
(thickness/base material 1 of bond layer 3 and the total thickness of binder layer 2)
Thickness/the base material 1 of bond layer 3 and the total thickness of binder layer 2 are preferably more than 0.045, are more preferably more than 0.05.When being more than 0.045, grinding (ornamenting) effect of cutting blade can being obtained, the reduction of the sharpness of cutting blade can be suppressed.Thickness/the base material 1 of bond layer 3 and the total thickness of binder layer 2 are preferably less than 0.9, are more preferably less than 0.45, more preferably less than 0.3.When being less than 0.9, can prevent the life-span of cutting blade from becoming too short.
(manufacture method of semiconductor device)
Below, limit is described with reference to the manufacture method of Fig. 3 limit to the semiconductor device using dicing/die bonding film 10.Fig. 3 is the figure of a part for the manufacturing process schematically showing semiconductor device.
First, attach on part 3a at the semiconductor crystal wafer of the bond layer 3 of dicing/die bonding film 10 and crimp semiconductor crystal wafer 4, by its bonding maintenance and fixing (attaching operation).This operation utilizes the pressing means limits such as crimping roller to be undertaken by flanging.
Then, with cutting blade, semiconductor crystal wafer 4 is cut off and singualtion, obtain semi-conductor chip 5.Cutting method is not particularly limited, preferably, cut to the half of the thickness of semiconductor crystal wafer 4 with cutting blade A, utilize the cutting blade B less than cutting blade A tread at least to cut off the method (substep cutting) of semiconductor crystal wafer 4 and bond layer 3.
As cutting blade, in resin, preferably embed the blade of diamond particles.
The thick more Bao Yuehao of sword of cutting blade, usually uses the blade of thick about 15 ~ 30 μm of sword.This is because line of cut is narrower, the quantity of the chip that can be made by a slice semiconductor crystal wafer 4 more increases.When making less semi-conductor chip 5 by the semiconductor crystal wafer 4 that line of cut is many, this tendency is more obvious.
Cutting blade wears away gradually when cutting, and therefore, goes out the life-span that sword amount determines cutting blade.
When cutting blade is thin, the weakened of cutting blade, if therefore do not reduce cutting blade go out sword amount; could intensity be kept, its result, the lifetime of cutting blade.On the other hand, use sword amount excessive time, in cutting, cutting blade breaks or cutting blade distortion and cause crackle, the breach of chip in cutting.Therefore, the sword amount that goes out of this slim cutting blade is preferably 400 ~ 1000 μm.
In order to be peeled off by the semi-conductor chip 5 being bonded and fixed to dicing/die bonding film 10, and carry out the pickup of semi-conductor chip 5.As the method for pickup, be not particularly limited, existing known various method can be adopted.Such as, can list: by each semi-conductor chip 5 Self cleavage/die bonding film 10 side eedle (needle) jack-up, utilize pickup device to pick up by the method etc. of the semi-conductor chip 5 of jack-up.
Herein, about pickup, when binder layer 2 is ultraviolet hardening, carry out after to this binder layer 2 irradiation ultraviolet radiation.Thus, the bounding force of binder layer 2 pairs of bond layers 3 reduces, and the stripping of semi-conductor chip 5 becomes easy.Its result, can pick up semi-conductor chip 5 with no damage.The conditions such as exposure intensity during uviolizing, irradiation time are not particularly limited, suitably set as required.
The semi-conductor chip 5 of pickup is bonded and fixed to adherend 6 (chip attachment) via bond layer 3.Being not particularly limited chip attachment temperature, such as, is 80 ~ 150 DEG C.
Then, by carrying out heat treated to bond layer 3, thus semi-conductor chip 5 is bonding with adherend 6.The temperature of heat treated is preferably more than 80 DEG C, is more preferably more than 170 DEG C.The temperature of heat treated is preferably less than 200 DEG C, is more preferably less than 180 DEG C.When the temperature of heat treated is above-mentioned scope, can be bonding well.In addition, the time of heat treated can suitably set.
Then, the wire-bonded operation utilizing bonding wire 7 to be electrically connected with the electrode pad (not shown) on semi-conductor chip 5 front end of the portion of terminal of adherend 6 (inner lead) is carried out.As bonding wire 7, such as, can use gold thread, aluminum steel or copper cash etc.Temperature when carrying out wire-bonded is preferably more than 80 DEG C, is more preferably more than 120 DEG C, and this temperature is preferably less than 250 DEG C, is more preferably less than 175 DEG C.In addition, several seconds ~ several minutes (such as, 1 second ~ 1 minute) is carried out its heat-up time.Line connect by being heated under the state in foregoing temperature range, combinationally use the vibrational energy that obtained by ultrasonic wave and undertaken by applying crimping energy that pressure obtains.
Then, the sealing process utilizing sealing resin 8 to be sealed by semi-conductor chip 5 is carried out.This operation is carried out to protect semi-conductor chip 5, the bonding wire 7 being equipped on adherend 6.This operation is by carrying out the resin of sealing at in-mold molding.As sealing resin 8, such as, use the resin of epoxy.Heating temperature during resin seal is preferably more than 165 DEG C, is more preferably more than 170 DEG C, and this Heating temperature is preferably less than 185 DEG C, is more preferably less than 180 DEG C.
As required, also can heat (after fixing operation) sealer further.Thus, can solidify solidifying in sealing process not enough sealing resin 8 completely.Heating temperature can suitably set.
As mentioned above, by following method, semiconductor device can be manufactured.That is, described method comprises following operation (I) to (IV): operation (I), the bond layer 3 of dicing/die bonding film 10 and semiconductor crystal wafer 4 is pasted; Operation (II), cutting semiconductor wafer 4, forms semi-conductor chip 5; Operation (III), picks up the semi-conductor chip 5 formed by operation (II) together with bond layer 3; And operation (IV), the semi-conductor chip 5 that will be picked up by operation (III) via bond layer 3 chip attachment on adherend 6.
embodiment
Below, the present invention is described in detail to use embodiment, but the present invention only otherwise exceed its main idea, is not limited to following examples.
The composition used in embodiment is described.
Alumina packing 1: DAW-03 (spherical alumina filler, median size: 5.1 μm, specific surface area: 0.5m that Deuki Kagaku Kogyo Co., Ltd manufactures
2/ g)
Alumina packing 2: ASFP-20 (spherical alumina filler, median size: 0.3 μm, specific surface area: 12.5m that Deuki Kagaku Kogyo Co., Ltd manufactures
2/ g)
AO802 (spherical alumina filler, median size: 0.7 μm, specific surface area: 7.5m that alumina packing 3:Admatechs Co., Ltd. manufactures
2/ g)
The Teisanresin SG-70L (acrylic copolymer, Mw:90 ten thousand, second-order transition temperature :-13 DEG C) that acrylic polymers 1:Nagase ChemteX Corporation manufactures
The Teisanresin SG-P3 (acrylic copolymer, Mw:85 ten thousand, second-order transition temperature: 12 DEG C) that acrylic polymers 2:Nagase ChemteX Corporation manufactures
Resol: the bright MEH-7851H (resol, Mw:1580) with changing into Co., Ltd.'s manufacture
Epoxy resin: the JER827 (bisphenol A type epoxy resin, Mw:370) that Mitsubishi chemical Co., Ltd manufactures
Silane coupling agent: the KBM-403 (3-glycidoxypropyltrime,hoxysilane) that KCC of SHIN-ETSU HANTOTAI manufactures
The surface treatment method of alumina packing is described.
Alumina packing 1 ~ 3 silane coupling agent is carried out surface treatment, obtains surface treatment alumina packing 1 ~ 3.Surface treatment is undertaken by drying process, processes with the silane coupling agent of the amount shown in following formula.
Silane coupling agent treatment capacity=(specific surface area (m of weight (the g) × alumina packing of alumina packing
2/ g)) the minimum coating area (m of/silane coupling agent
2/ g)
The minimum coating area (m of silane coupling agent
2/ g)=6.02 × 10
23× 13 × 10
-20the molecular weight of/silane coupling agent
[embodiment 1 ~ 6 and comparative example 2 ~ 6]
(making of die bonding film (bond layer))
Polyethylene (PE) container of 150mL is put into according to the compounding ratio recorded in table 1, alumina packing, acrylic polymers, resol and epoxy resin by surface-treated, 4 minutes are stirred with 2000rpm with rotation-revolution mixing tank (Co., Ltd. THINKY manufactures, ARE-310).Then, add methylethylketone (MEK), stir 5 minutes with 2000rpm further, obtain the adhesive composite solution being suitable for the viscosity applied.Then, use the twill SUS net filtration adhesive composite solution of 400 orders (46 μm, mesh), thickness filtrate being applied to having been carried out silicone release process is on the demoulding process film (release liner) formed by pet film of 50 μm, then at 130 DEG C dry 2 minutes, die bonding film (thickness is shown in table 1) is obtained.
(making of cutting film)
2-EHA (being sometimes referred to as " 2EHA ") 80 parts, vinylformic acid-2-hydroxyl ethyl ester (being sometimes referred to as " HEA ") 20 parts and toluene 65 parts is put in the reaction vessel possessing cooling tube, nitrogen ingress pipe, thermometer and whipping appts, in stream of nitrogen gas, at 61 DEG C, carry out the aggregation processing of 6 hours, obtain acrylic polymers X.
2-methacryloxyethyl isocyanic ester (being sometimes referred to as " MOI ") 24.1 parts (be 90mol% relative to HEA) is added in this acrylic polymers X 100 parts, in air draught, at 50 DEG C, carry out the addition reaction process of 48 hours, obtain acrylic polymers Y.
Then, relative to acrylic polymers Y100 part, add polyisocyanate compound (trade(brand)name " CORONATE L ", Nippon Polyurethane Industry Co., Ltd. manufactures) 3 parts, as whipping agent heat-expandable microsphere (trade(brand)name " Microsphere F-50D ", Matsumoto Yushi-Seiyaku Co., Ltd. manufactures; Foaming starting temperature: 120 DEG C) 35 parts and Photoepolymerizationinitiater initiater (trade(brand)name " Irgacure651 ", Ciba Specialty Chemicals Inc. manufactures) 5 parts, prepare the binder solution of active energy ray curable thermal expansivity tackiness agent.
Then, at the binder solution of the upper coat activated energy ray-curable thermal expansivity tackiness agent of the base material (polypropylene) formed by polypropylene of thickness 100 μm, be then dried, thus on base material, form the binder layer of thickness 10 μm.
And then, only to binder layer attaches the corresponding partial illumination 500mJ/cm of part with wafer
2the ultraviolet of (uviolizing accumulated light), makes the cutting film making this corresponding part ultraviolet curing.
(making of dicing/die bonding film)
Transfer printing die bonding film on the binder layer of cutting film, makes dicing/die bonding film.
[comparative example 1]
Except changing the making method of die bonding film, make dicing/die bonding film by method similarly to Example 1.
(making of die bonding film)
According to the compounding ratio recorded in table 1, acrylic polymers, resol and methylethylketone (MEK) are put into plastic cup containers, utilize diverting device to stir 4 minutes with 3000rpm, obtain adhesive composite solution.Then, use the twill SUS net filtration adhesive composite solution of 400 orders (46 μm, mesh), thickness filtrate being applied to silicone release process is on the demoulding process film (release liner) formed by pet film of 50 μm, then, at 130 DEG C, drying 2 minutes, obtains die bonding film.
[evaluation]
The dicing/die bonding film obtained is used to carry out following evaluation.Show the result in table 1.
(blade wear loss)
Grinding attachment (DGP-8760 that Co., Ltd. DISCO manufactures) is used to carry out grinding until the thickness of naked Silicon Wafer (8 inch diameters, thickness 750 μm) reaches 100 μm to the naked Silicon Wafer back side.Use laminating machine that naked Silicon Wafer (thickness 100 μm, 8 inches) is attached to the die bonding film (bond layer) of dicing/die bonding film at 60 DEG C with the pressure plaster of speed 10m/min, 0.15MPa.Then, be attached at cut ring, the Dicer (DFD6760) utilizing DISCO Co., Ltd. to manufacture carries out substep cutting.
Below, limit is described substep cutting with reference to Fig. 4, Fig. 5 limit.
Set blade height to the first cutting blade 21 (Z1 blade) to make to cut naked Silicon Wafer 24 to the degree of depth 50 μm, naked Silicon Wafer 24 is cut 100m (with reference to Fig. 4) under the condition of speed 50mm/sec, rotating speed 40000rpm.Then, carrying out setting to the second cutting blade 23 (Z2 blade) makes with the degree of depth 10 μm incision base material 1, under the condition of speed 50mm/sec, rotating speed 45000rpm, cut 100m along otch 22, naked Silicon Wafer 24 and bond layer 3 are cut off (with reference to Fig. 5).It should be noted that, about the cleaning water yield, water cooler, spray, spraying are set as 1L/min respectively.
As Z1 blade, use the 203O-SE 27HCDD that DISCO Co., Ltd. manufactures.
Below the specification of Z1 blade is described.
The 203O-SE27HCDD that DISCO Co., Ltd. manufactures
Concentration degree (concentration of diamond particles): regular set moderate
Particle diameter (particle diameter of diamond particles): #3500
Binding agent: standard type
Base shape: sharp edge pedestal
Inside/outside diameter size: external diameter 55.56mm (diameter), internal diameter 19.05mm (diameter)
Particle diameter symbol: C
Go out sword amount: 0.76 ~ 0.89mm
Kerf width (tread): 0.030 ~ 0.035mm
As Z2 blade, use 203O-SE27HCBB.
Below the specification of Z2 blade is described.
The 203O-SE27HCBB that DISCO Co., Ltd. manufactures
Concentration degree (concentration of diamond particles): regular set moderate
Particle diameter (particle diameter of diamond particles): #3500
Binding agent: standard type
Base shape: sharp edge pedestal
Inside/outside diameter size: external diameter 55.56mm (diameter), internal diameter 19.05mm (diameter)
Particle diameter symbol: C
Go out sword amount: 0.51 ~ 0.64mm
Kerf width (tread): 0.020 ~ 0.025mm
Utilize the blade position alignment function of the contact of cutting unit (manufacture of DFD6361, DISCO Co., Ltd.), measure the wear loss obtaining Z2 blade.
(having impulse-free robustness to produce (1))
Except cutting 300m, cut by the method same with the method illustrated in blade wear loss.Self cleavage film peels off the wafer (chip of band caking agent) of the band caking agent of singualtion, uses observation by light microscope line of cut.The situation of the burr shape foreign matter of the length of generation more than 20 μm is judged to be ×, by foreign matter less than 20 μm or the situation that there is not burr shape foreign matter be judged to be zero.
(having impulse-free robustness to produce (2))
Except cutting 300m, cut by the method same with the method illustrated in blade wear loss.The chip of Self cleavage film release band caking agent, with the intersection point of observation by light microscope line of cut.Observation place is total 5 place for the naked Silicon Wafer of every a slice, near central authorities, observe 1 place, and near the periphery of wafer, (within distance periphery 5cm) observes 4 places.Counting creates the position of the burr of more than 100 μm in the middle of total 5 place.In table 1, " 0/5 " represents that 5 places all do not produce the burr of more than 100 μm.In table 1, " 5/5 " represents that 5 places all produce the burr of more than 100 μm.
table 1
About the comparative example 1 of alumina packing not compounding in bond layer, blade wear loss is too small, and the sharpness of blade reduces, and produces burr.In addition, the comparative example 2,3 that the thickness about bond layer is large, blade wear loss is excessive, cannot evaluate impulse-free robustness and produce.About the comparative example 4 that the thickness of bond layer is little, blade wear loss is too small, produces burr.About the comparative example 5 that alumina packing is few, blade wear loss is too small, produces burr.In addition, about the comparative example 6 that alumina packing is many, naked Silicon Wafer cannot be attached at bond layer, cannot evaluate the generation of wear loss, burr.
On the other hand, the thickness/base material of bond layer and the total thickness of binder layer are designed to the embodiment 1 ~ 6 of specified range about alumina packing compounding in bond layer, blade wear loss can be optimized, the generation of burr can be suppressed.
Claims (3)
1. a dicing/die bonding film, it is dicing/die bonding film base material, binder layer and bond layer stacked gradually, wherein,
Under the state that described bond layer is pasted with the naked Silicon Wafer of thickness 100 μm, after described naked Silicon Wafer is cut 100m with penetraction depth 50 μm by the first cutting blade, the wear loss of described second cutting blade when described naked Silicon Wafer and described bond layer being cut off 100m along the otch of described first cutting blade, the second cutting blade with the penetraction depth at least arriving described binder layer is 20 ~ 200 μm
The tread of described second cutting blade is less than the tread of described first cutting blade,
The otch formation condition of described first cutting blade is utilized to be: speed 50mm/sec, rotating speed 40000rpm,
The cut-out condition of described second cutting blade is utilized to be: speed 50mm/sec, rotating speed 45000rpm.
2. dicing/die bonding film according to claim 1, wherein, the thickness/described base material of described bond layer and the total thickness of described binder layer are 0.045 ~ 0.9.
3. dicing/die bonding film according to claim 1 and 2, wherein, described bond layer comprises spherical alumina filler as abrasive, and the content of the described spherical alumina filler in described bond layer is 60 ~ 88 % by weight.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-130272 | 2013-06-21 | ||
| JP2013130272A JP2015005636A (en) | 2013-06-21 | 2013-06-21 | Dicing/die-bonding film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104231961A true CN104231961A (en) | 2014-12-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410279953.6A Pending CN104231961A (en) | 2013-06-21 | 2014-06-20 | Cutting/chip bonding film |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2015005636A (en) |
| KR (1) | KR20140148331A (en) |
| CN (1) | CN104231961A (en) |
| TW (1) | TWI633593B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110945634A (en) * | 2017-07-20 | 2020-03-31 | 日立化成株式会社 | Heat dissipating die bond film and dicing die bond film |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6549902B2 (en) | 2015-05-27 | 2019-07-24 | 日東電工株式会社 | Dicing die bond film, method of manufacturing semiconductor device and semiconductor device |
| TW202209548A (en) * | 2020-08-27 | 2022-03-01 | 日商富士軟片股份有限公司 | Method for manufacturing processed substrate, method for manufacturing semiconductor element, and composition for forming temporary adhesive layer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101038891A (en) * | 2006-03-16 | 2007-09-19 | 株式会社东芝 | Manufacturing method of semiconductor device |
| JP2012186361A (en) * | 2011-03-07 | 2012-09-27 | Nitto Denko Corp | Dicing/die-bonding film and semiconductor element |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0574932A (en) * | 1991-09-17 | 1993-03-26 | Fujitsu Ltd | Dicing method for semiconductor wafer |
| JP4801127B2 (en) * | 2008-09-01 | 2011-10-26 | 日東電工株式会社 | Manufacturing method of dicing die-bonding film |
| KR101856557B1 (en) * | 2011-03-16 | 2018-05-10 | 후루카와 덴키 고교 가부시키가이샤 | Highly heat conductive film-shaped adhesive composition, highly heat conductive film-shaped adhesive and method for producing semiconductor package by using the highly heat conductive film-shaped adhesive |
-
2013
- 2013-06-21 JP JP2013130272A patent/JP2015005636A/en active Pending
-
2014
- 2014-06-13 TW TW103120520A patent/TWI633593B/en active
- 2014-06-19 KR KR1020140074939A patent/KR20140148331A/en not_active Application Discontinuation
- 2014-06-20 CN CN201410279953.6A patent/CN104231961A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101038891A (en) * | 2006-03-16 | 2007-09-19 | 株式会社东芝 | Manufacturing method of semiconductor device |
| JP2012186361A (en) * | 2011-03-07 | 2012-09-27 | Nitto Denko Corp | Dicing/die-bonding film and semiconductor element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110945634A (en) * | 2017-07-20 | 2020-03-31 | 日立化成株式会社 | Heat dissipating die bond film and dicing die bond film |
| CN110945634B (en) * | 2017-07-20 | 2023-08-29 | 株式会社力森诺科 | Heat-dissipating die bonding film and dicing die bonding film |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015005636A (en) | 2015-01-08 |
| TWI633593B (en) | 2018-08-21 |
| TW201513192A (en) | 2015-04-01 |
| KR20140148331A (en) | 2014-12-31 |
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