CN104946146B - Die bonding film, die bonding film with dicing sheet, semiconductor device, and method for manufacturing semiconductor device - Google Patents

Die bonding film, die bonding film with dicing sheet, semiconductor device, and method for manufacturing semiconductor device Download PDF

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Publication number
CN104946146B
CN104946146B CN201510141488.4A CN201510141488A CN104946146B CN 104946146 B CN104946146 B CN 104946146B CN 201510141488 A CN201510141488 A CN 201510141488A CN 104946146 B CN104946146 B CN 104946146B
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die
bonding film
acrylate
dicing sheet
meth
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CN104946146A (en
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大西谦司
三隅贞仁
村田修平
宍户雄一郎
木村雄大
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Nitto Denko Corp
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Nitto Denko Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

A die bonding film, a die bonding film with a dicing sheet, a semiconductor device, and a method for manufacturing a semiconductor device. The invention provides a die bonding film capable of easily confirming fragments of a semiconductor chip. A die-bonding film characterized in that when the light transmittance at a wavelength of 400nm before heat curing is T1 (%), and the light transmittance at a wavelength of 400nm after heating at 120 ℃ for 1 hour is T2 (%), T1 is 80% or more, and the difference between T1 and T2 (T1-T2) is 20% or less.

Description

Die bonding film, die bonding film with dicing sheet, semiconductor device, and method for manufacturing semiconductor device
Technical Field
The invention relates to a die bonding film, a die bonding film with a dicing sheet, a semiconductor device, and a method for manufacturing the semiconductor device.
Background
Conventionally, in the manufacturing process of a semiconductor device, a silver paste is used when a semiconductor chip is fixed to an adherend such as a lead frame. The fixing treatment is performed by applying a paste-like adhesive to a pad or the like of a lead frame, mounting a semiconductor chip thereon, and curing the paste-like adhesive layer.
However, the paste-like adhesive has large variations in the amount of application and the shape of application due to its viscosity behavior, deterioration, and the like. As a result, the thickness of the formed paste adhesive is not uniform, and thus the reliability of the fixing strength of the semiconductor chip is insufficient. For example, if the amount of the paste-like adhesive applied is insufficient, the adhesive strength between the semiconductor chip and the adherend is reduced, and the semiconductor chip is peeled off in the subsequent wire bonding step. On the other hand, when the amount of the paste-like adhesive applied is too large, the paste-like adhesive flows onto the semiconductor chip, and the characteristics are poor, and the yield and reliability are lowered. Such a problem in the fixing process becomes particularly significant as the semiconductor chip is increased in size.
In the paste-like adhesive application step, there is a method of applying the paste-like adhesive to the lead frame and the chip to be formed, respectively. However, this method is difficult to achieve homogenization of the slurry-like adhesive layer, and requires a special apparatus or a long time for application of the slurry-like adhesive. Therefore, a die bond film having an adhesive layer for fixing a semiconductor chip has been proposed (for example, see patent document 1).
The die-bonding film is bonded to a semiconductor wafer and diced together with the semiconductor wafer, and then peeled off from a dicing tape together with the formed semiconductor chip. After that, the semiconductor chip is fixed to the adherend through the die bonding film.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. H05-179211
Disclosure of Invention
Problems to be solved by the invention
The present inventors have studied a semiconductor device manufactured using the above-described die bonding film. As a result, it was found that the back surface of the semiconductor chip was covered with the die bonding film, and therefore, even if chipping occurred, it was difficult to find.
The present invention has been made in view of the above problems, and an object thereof is to provide a die bonding film in which fragments of a semiconductor chip can be easily confirmed, and a die bonding film with a dicing sheet. Also disclosed is a semiconductor device manufactured using such a die-bonding film or such a die-bonding film with a dicing sheet. Also disclosed is a method for manufacturing a semiconductor device using such a die bonding film with a dicing sheet.
Means for solving the problems
The present inventors have conducted intensive studies in order to solve the problems. As a result, they have found that chipping of a semiconductor chip can be easily confirmed by using a die bonding film having the following configuration, and have completed the present invention.
That is, the die-bonding film according to the present invention is characterized in that when the light transmittance at a wavelength of 400nm before heat curing is T1 (%), and the light transmittance at a wavelength of 400nm after heating at 120 ℃ for 1 hour is T2 (%), the T1 is 80% or more, and the difference between the T1 and the T2 (T1-T2) is 20% or less.
According to the above configuration, since T1 (%) is 80% or more, it can be easily found whether or not there is a chip on the back surface or the side surface of the semiconductor chip in a state where the die bonding film is attached to the back surface of the semiconductor chip and before thermosetting (for example, in a state after dicing).
In addition, since the difference between the T1 and the T2 (T1-T2) is 20% or less, the light transmittance after heat curing (for example, after heating at 120 ℃ for 1 hour) is also somewhat high. Therefore, even in the state after thermosetting, it can be easily found whether or not there is a chip on the back surface or the side surface of the semiconductor chip.
As can be seen, according to the present invention, it is possible to easily find whether or not there is a chip on the back surface or the side surface of the semiconductor chip in both the state before and after thermosetting.
Further, even after a process involving a thermal history, for example, die bonding or wire bonding, a void of the die bonding film can be visually checked.
In the above constitution, the ratio T2/T1 of the T1 to the T2 is preferably in the range of 0.75 to 1.0.
When the ratio T2/T1 is in the range of 0.75 to 1.0, the light transmittance after heat curing (after heating at 120 ℃ for 1 hour) is also somewhat higher than that before heat curing. Therefore, in the state after the thermosetting, it can be further easily found whether or not the chips are present on the back surface and the side surface of the semiconductor chip.
Further, after processes involving thermal history, such as die bonding and wire bonding, visual confirmation of the voids in the die bonding film is further facilitated.
The die-bonding film with a dicing sheet according to the present invention is a die-bonding film with a dicing sheet in which the die-bonding film is provided on a dicing sheet, and is characterized in that the light transmittance of the dicing sheet at a wavelength of 400nm is more than 80%.
According to the above configuration, since the dicing sheet has a light transmittance at a wavelength of 400nm of more than 80%, it is possible to easily find whether or not there is a chip on the back surface or the side surface of the semiconductor chip in a state where the die-bonding film with the dicing sheet is attached to the back surface of the semiconductor chip.
In the constitution, the light transmittance at a wavelength of 400nm of the die-bonding film with a dicing sheet before heat curing is preferably more than 50%.
If the light transmittance at a wavelength of 400nm of the die-bonding film with a dicing sheet before thermosetting is more than 50%, it is possible to more easily find whether or not there is a chip on the back surface or the side surface of the semiconductor chip in a state where the die-bonding film with a dicing sheet is attached to the back surface of the semiconductor chip.
In the above configuration, the die-bonding film preferably contains 50 wt% or more of an acrylic copolymer with respect to the entire organic resin component.
When the die-bonding film contains 50 wt% or more of the acrylic copolymer with respect to the entire organic resin component, the light transmittance of the die-bonding film at a wavelength of 400nm can be improved both before and after the thermosetting.
In the above configuration, the die-bonding film preferably contains an acrylic copolymer obtained by polymerizing a monomer raw material containing an alkyl acrylate or an alkyl methacrylate at a ratio of 50 wt% or more.
When the die-bonding film contains an acrylic copolymer obtained by polymerizing a monomer raw material containing an alkyl acrylate or an alkyl methacrylate at a ratio of 50 wt% or more, the light transmittance of the die-bonding film at a wavelength of 400nm can be further improved.
In the above configuration, the dicing sheet preferably includes a base material and an adhesive layer containing an acrylic copolymer obtained by polymerizing a monomer material containing an alkyl acrylate or an alkyl methacrylate at a ratio of 50 wt% or more.
When the pressure-sensitive adhesive layer contains an acrylic copolymer obtained by polymerizing a monomer raw material containing an alkyl acrylate or alkyl methacrylate in a proportion of 50 wt% or more, the light transmittance of the pressure-sensitive adhesive layer at a wavelength of 400nm can be improved.
In the above configuration, the die-bonding film preferably contains at least 1 or more selected from the group consisting of an alicyclic epoxy resin and an alicyclic acid anhydride as a thermosetting resin.
When the die-bonding film contains at least 1 or more selected from the group consisting of alicyclic epoxy resins and alicyclic acid anhydrides as the thermosetting resin, yellowing and the like can be suppressed after thermosetting, and the light transmittance of the die-bonding film after thermosetting at a wavelength of 400nm can be kept high.
In the above configuration, the die bond film preferably has a loss elastic modulus of 0.05 to 0.5MPa at 120 ℃.
If the loss elastic modulus of the die-bonding film at 120 ℃ is 0.05MPa or more, wire bonding can be easily performed. On the other hand, when the loss elastic modulus of the die-bonding film at 120 ℃ is 0.5MPa or less, the adhesiveness to an adherend can be improved.
Further, a semiconductor device according to the present invention is manufactured using the die bonding film described above or the die bonding film with a dicing sheet described above.
Further, a method for manufacturing a semiconductor device according to the present invention includes:
a preparation step of preparing the die bonding film with dicing sheet described above;
a bonding step of bonding the die bonding film of the die bonding film with dicing sheet to the back surface of the semiconductor wafer;
a dicing step of dicing the semiconductor wafer together with the die bonding film to form a chip-shaped semiconductor chip;
a pickup step of picking up the semiconductor chip together with the die bonding film from the die bonding film with the dicing sheet; and
and a die bonding step of die bonding the semiconductor chip to an adherend via the die bonding film.
According to the above configuration, since the die-bonding film has the light transmittance T1 of 80% or more at the wavelength of 400nm before thermosetting, it is possible to easily find whether or not there is a chip on the back surface or the side surface of the semiconductor chip in a state where the die-bonding film is attached to the back surface of the semiconductor chip and before thermosetting (for example, a state after the dicing step).
In addition, the difference between the T1 and the T2 (T1-T2) was 20% or less, and thus the light transmittance was also somewhat after heat curing (after heating at 120 ℃ for 1 hour). Therefore, even in the state after thermosetting, it can be easily found whether or not there is a chip on the back surface or the side surface of the semiconductor chip.
Drawings
Fig. 1 is a schematic cross-sectional view showing a die-bonding film with a dicing sheet according to an embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view for explaining one method of manufacturing a semiconductor device according to the present embodiment.
Description of the symbols
10 die-bonding film with dicing sheet
11 cutting blade
12 base material
14 adhesive layer
16 die bonding film
4 semiconductor wafer
5 semiconductor chip
6 adherend
7 bonding wire
8 sealing resin
Detailed Description
(die bonding film with dicing sheet)
A die bond film and a die bond film with a dicing sheet according to an embodiment of the present invention will be described below. As the die bonding film according to the present embodiment, a die bonding film in a state where a dicing sheet is not bonded can be given as an example of the die bonding film with a dicing sheet described below. Therefore, in the following, a description is given of a die bonding film with a dicing sheet, in which the die bonding film is described. Fig. 1 is a schematic cross-sectional view showing a die-bonding film with a dicing sheet according to an embodiment of the present invention.
As shown in fig. 1, the die-bonding film with dicing sheet 10 has a structure in which a die-bonding film 16 is laminated on a dicing sheet 11. The dicing sheet 11 is formed by laminating an adhesive layer 14 on a base material 12, and a die bonding film 16 is provided on the adhesive layer 14.
In the present embodiment, a case where the dicing sheet 11 has the portion 14b not covered with the die bonding film 16 is described, but the die bonding film with a dicing sheet according to the present invention is not limited to this example, and the die bonding film may be laminated on the dicing sheet so as to cover the entire dicing sheet.
Regarding the die-bonding film 16, when the light transmittance at a wavelength of 400nm before thermal curing is T1 (%), and the light transmittance at a wavelength of 400nm after heating at 120 ℃ for 1 hour is T2 (%), the T1 is 80% or more, preferably 82% or more, and more preferably 85% or more. Since T1 (%) is 80% or more, it can be easily found whether or not there is a chip on the back surface or the side surface of the semiconductor chip in a state where the die bonding film 16 is attached to the back surface of the semiconductor chip and before thermosetting (for example, in a state after dicing).
The higher the T1, the more preferable it is, but it may be set to 100% or less, for example.
The reason why the light transmittance at a wavelength of 400nm is used is to achieve the purpose of enabling visual confirmation.
The light transmittances T1, T2 may be controlled by the material constituting the die-bonding film 16. For example, the kind and content of the thermoplastic resin constituting the die-bonding film 16 can be appropriately selected; the type and content of the thermal curing agent; the average particle diameter and the content of the filler are controlled.
The light transmittance (%) of the die-bonding film at a wavelength of 400nm was determined under the following conditions.
< conditions for measuring light transmittance >
A measuring device: ultraviolet visible near-infrared spectrophotometer V-670DS (manufactured by Japan Spectroscopy Co., Ltd.)
Wavelength scanning speed: 2000nm/min
Measurement range: 300 to 1200nm
An integrating sphere unit: ISN-723
Point diameter: 1cm square
In the die-bonding film 16, the difference (T1-T2) between the T1 and the T2 is 20% or less, preferably 18% or less, and more preferably 15% or less. Since the difference between the T1 and the T2 (T1-T2) is 20% or less, the light transmittance after heat curing (after heating at 120 ℃ for 1 hour) is also high to some extent. Therefore, even in the state after thermosetting, it can be easily found whether or not the chips are present on the back surface and the side surface of the semiconductor chip.
Further, even after a process involving a thermal history, for example, die bonding or wire bonding, a void of the die bonding film can be visually checked.
The smaller the difference (T1-T2) is, the more preferable, but it may be set to 0% or more, for example.
In the die-bonding film 16, the ratio T2/T1 of the T1 to the T2 is preferably in the range of 0.75 to 1.0, more preferably in the range of 0.80 to 0.98, and still more preferably in the range of 0.85 to 0.95. When the ratio T2/T1 is in the range of 0.75 to 1.0, the light transmittance after heat curing (after heating at 120 ℃ for 1 hour) is also somewhat higher than that before heat curing. Therefore, in the state after the thermosetting, it can be easily found whether or not the chips exist on the back surface and the side surface of the semiconductor chip. Further, even after a process involving a thermal history, for example, die bonding or wire bonding, a void of the die bonding film can be visually checked.
The die bond film 16 preferably has a loss elastic modulus at 120 ℃ of 0.05 to 0.5MPa, more preferably 0.07 to 0.4MPa, and still more preferably 0.09 to 0.3 MPa. If the loss elastic modulus of the die-bonding film 16 at 120 ℃ is 0.05MPa or more, the wire-bonding property can be improved. On the other hand, if the loss elastic modulus at 120 ℃ of the die-bonding film 16 is 0.5MPa or less, the adhesiveness to the adherend can be improved.
The loss elastic modulus can be controlled by the material constituting the die-bonding film 16. For example, the kind and content of the thermoplastic resin constituting the die-bonding film 16 can be appropriately selected; the type and content of the thermal curing agent; the average particle diameter and the content of the filler are controlled.
Examples of the material constituting the die bond film 16 include thermosetting resins. In addition, a thermoplastic resin and a thermosetting resin may be used in combination.
Examples of the thermosetting resin include: phenolic resins, amino resins, unsaturated polyester resins, epoxy resins, polyurethane resins, silicone resins, or thermosetting polyimide resins, alicyclic acid anhydrides, and the like. These resins may be used alone or in combination of 2 or more. Particularly, an epoxy resin having a low content of ionic impurities and the like which corrode a semiconductor element is preferable. As the curing agent for the epoxy resin, a phenol resin is preferable.
The epoxy resin is not particularly limited as long as it is an epoxy resin generally used as an adhesive for die bonding, and for example: a bifunctional epoxy resin or a polyfunctional epoxy resin such as a bisphenol a type, a bisphenol F type, a bisphenol S type, a brominated bisphenol a type, a hydrogenated bisphenol a type, a bisphenol AF type, a biphenyl type, a naphthalene type, a fluorene type, a phenol novolac type, an o-cresol novolac type, a trishydroxyphenylmethane type, a tetrakis (hydroxyphenyl) ethane type, or an epoxy resin such as a hydantoin type, a triglycidyl isocyanurate type, or a glycidylamine type. In addition, an alicyclic epoxy resin may be used. These may be used alone, or in combination of 2 or more. Among these epoxy resins, an alicyclic epoxy resin is preferable. The alicyclic epoxy resin is preferably used because it is less likely to be oxidized and can suppress yellowing or the like after thermosetting. Examples of the alicyclic epoxy resin include hydrogenated bisphenol epoxy resins.
The phenol resin functions as a curing agent for the epoxy resin, and examples thereof include: phenol novolac resins such as phenol novolac resin, phenol aralkyl resin, cresol novolac resin, tert-butylphenol novolac resin, and nonylphenol novolac resin, resol novolac resins, and polyhydroxystyrenes such as polyparahydroxystyrene. These may be used alone, or in combination of 2 or more.
The mixing ratio of the epoxy resin and the phenol resin is preferably such that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents to 1 equivalent of the epoxy group in the epoxy resin component, for example. More preferably 0.8 to 1.2 equivalents. Namely, this is because: if the mixing ratio of the two components is outside the above range, the curing reaction does not proceed sufficiently, and the properties of the cured epoxy resin tend to deteriorate.
The alicyclic acid anhydride functions as a curing agent for the epoxy resin, and examples thereof include hexahydrophthalic anhydride. The alicyclic acid anhydride is excellent in that it is less likely to be oxidized and can suppress yellowing and the like after thermal curing.
Examples of the thermoplastic resin include: natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, an ethylene-vinyl acetate copolymer, an ethylene-acrylic acid ester copolymer, a polybutadiene resin, a polycarbonate resin, a thermoplastic polyimide resin, a polyamide resin such as 6-nylon or 6, 6-nylon, a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET or PBT, a polyamideimide resin, a fluororesin, or the like. These thermoplastic resins may be used alone, or in combination of 2 or more. Among these thermoplastic resins, acrylic resins having few ionic impurities, high heat resistance, and capable of securing reliability of semiconductor devices are particularly preferable.
The acrylic resin is not particularly limited, and examples thereof include a polymer (acrylic copolymer) containing 1 or 2 or more kinds of acrylic acid esters or methacrylic acid esters (alkyl acrylate or alkyl methacrylate) having a linear or branched alkyl group having 30 or less carbon atoms, particularly having 4 to 18 carbon atoms. Examples of the alkyl group include: methyl, ethyl, propyl, isopropyl, n-butyl, t-butyl, isobutyl, pentyl, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, octadecyl, or dodecyl, and the like.
Among them, the die-bonding film 16 preferably contains an acrylic copolymer obtained by polymerizing a monomer raw material containing an alkyl acrylate or an alkyl methacrylate in a proportion of 50 wt% or more. The proportion is more preferably 55% by weight or more, and still more preferably 60% by weight or more. When the die-bonding film 16 contains an acrylic copolymer obtained by polymerizing a monomer raw material containing an alkyl acrylate or an alkyl methacrylate in a proportion of 50 wt% or more, the light transmittance of the die-bonding film 16 at a wavelength of 400nm can be improved.
The larger the ratio is, the more preferable it is, but it may be set to 100% by weight or less, for example.
Further, other monomers forming the polymer are not particularly limited, and examples thereof include: carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; anhydride monomers such as maleic anhydride and itaconic anhydride; hydroxyl group-containing monomers such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl acrylate; sulfonic acid group-containing monomers such as styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acryloyloxynaphthalenesulfonic acid; or a monomer having a phosphoric acid group such as 2-hydroxyethyl acryloylphosphate.
The mixing ratio of the thermosetting resin is not particularly limited as long as the die bond film 16 exhibits a thermosetting function when heated under predetermined conditions, but is preferably within a range of 1 to 60 wt%, and more preferably within a range of 5 to 50 wt%, based on the entire die bond film 16.
The blending ratio of the thermoplastic resin is not particularly limited, but is preferably 10% by weight or more, and more preferably 15% by weight or more, with respect to the entire die-bonding film 16, from the viewpoint of flexibility and transparency. From the viewpoint of heat resistance, the amount is preferably 100 wt% or less, and more preferably 90 wt% or less, based on the entire die-bonding film 16.
Among them, the die-bonding film 16 preferably contains 50% by weight or more of an acrylic copolymer, more preferably 55% by weight or more, and still more preferably 60% by weight or more of the entire organic resin component. When the die-bonding film 16 contains 50 wt% or more of the acrylic copolymer with respect to the entire organic resin component, the light transmittance of the die-bonding film 16 at a wavelength of 400nm can be improved both before and after the heat curing.
When the die-bonding film 16 is crosslinked to some extent in advance, a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer or the like may be added as a crosslinking agent in advance at the time of production. This improves the adhesion properties at high temperatures and improves the heat resistance.
As the crosslinking agent, a conventionally known crosslinking agent can be used. In particular, polyisocyanate compounds such as toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1, 5-naphthalene diisocyanate, and addition products of polyols and diisocyanates are more preferable. The amount of the crosslinking agent to be added is preferably 0.05 to 7 parts by weight based on 100 parts by weight of the polymer. When the amount of the crosslinking agent exceeds 7 parts by weight, the adhesion is undesirably reduced. On the other hand, if the amount is less than 0.05 parts by weight, the cohesive force is not sufficient, which is not preferable. If necessary, other polyfunctional compounds such as epoxy resins may be contained together with the polyisocyanate compound.
In addition, a filler may be appropriately mixed in the die-bonding film 16 according to the use thereof. The filler can be blended to impart electrical conductivity, improve thermal conductivity, adjust elastic modulus, and the like. The filler includes an inorganic filler and an organic filler, but the inorganic filler is preferable from the viewpoint of improving the handling property, improving the thermal conductivity, adjusting the melt viscosity, imparting thixotropy, and other properties. The shape of the filler is not particularly limited, but is preferably spherical. The inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, amorphous silica, and the like. These can be used alone, also can be used in combination of more than 2. From the viewpoint of improving thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline silica, and amorphous silica are preferable. In addition, from the viewpoint of high balance of the above characteristics, crystalline silica or amorphous silica is preferable. For the purpose of imparting conductivity, improving thermal conductivity, and the like, a conductive material (conductive filler) may be used as the inorganic filler. Examples of the conductive filler include: metal powder obtained by forming silver, aluminum, gold, copper, nickel, conductive alloy, etc. into a spherical, needle-like, or flake form, metal oxide such as alumina, amorphous carbon black, graphite, etc.
The average particle diameter of the filler is preferably in the range of 0.001 to 0.8. mu.m, more preferably in the range of 0.005 to 0.7. mu.m, and still more preferably in the range of 0.01 to 0.5. mu.m. If the inorganic filler having an average particle diameter in the range of 0.001 μm to 0.8 μm is contained, the light transmittance of the die-bonding film 16 at a wavelength of 400nm can be kept high. In the present specification, the average particle diameter of the filler is a value obtained by a photometric particle size distribution meter (manufactured by HORIBA, trade name of apparatus; LA-910).
The amount of the filler added is preferably 0 to 50 wt%, more preferably 1 to 30 wt%, based on the entire die-bonding film 16.
In addition to the filler, other additives may be appropriately added to the die-bonding film 16 as needed. Examples of other additives include: flame retardants, silane coupling agents, ion scavengers, and the like. Examples of the flame retardant include: antimony trioxide, antimony pentoxide, brominated epoxy resins, and the like. These may be used alone or in combination of two or more. Examples of the silane coupling agent include: beta- (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, gamma-glycidoxypropyltrimethoxysilane, gamma-glycidoxypropylmethyldiethoxysilane, etc. These compounds may be used alone or in combination of two or more. Examples of the ion scavenger include hydrotalcites and bismuth hydroxide. These may be used alone or in combination of two or more.
The thickness (total thickness in the case of a laminate) of the die-bonding film 16 is not particularly limited, but is preferably 5 to 100 μm, more preferably 5 to 60 μm, and still more preferably 5 to 30 μm from the viewpoint of light transmittance.
As described above, the dicing sheet 11 has a structure in which the adhesive layer 14 is laminated on the base material 12.
The light transmittance of the dicing sheet 11 at a wavelength of 400nm is preferably more than 80%, more preferably more than 82%, and further preferably more than 85%. If the dicing sheet 11 has a light transmittance at a wavelength of 400nm of more than 80%, it is possible to easily find whether or not there is a chip on the back surface or the side surface of the semiconductor chip in a state where the die-bonding film 10 with the dicing sheet is attached to the back surface of the semiconductor chip.
The light transmittance of the dicing sheet at a wavelength of 400nm was obtained by the same method as the light transmittance of the die-bonding film at a wavelength of 400 nm.
The light transmittance may be controlled by the material constituting the dicing sheet 11. For example, the material and content of the base material 12 may be appropriately selected; the kind and content of the material constituting the pressure-sensitive adhesive layer 14 are controlled.
The base material 12 becomes a strength matrix of the die-bonding film 10 with the dicing sheet. Examples thereof include: low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra-low density polyethylene, polypropylene random copolymer, polypropylene block copolymer, polypropylene homopolymer, polyolefin such as polybutene and polymethylpentene, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylate (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyester such as polyethylene terephthalate and polyethylene naphthalate, polycarbonate, polyimide, polyether ether ketone, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylene sulfide, aromatic polyamide (paper), glass cloth, fluorine-containing resin, polyvinyl chloride, polyvinylidene chloride, cellulose-based resin, polyethylene terephthalate, polyethylene naphthalate, etc., polyester, polycarbonate, polyimide, polyether ether ketone, polyether imide, polyamide, wholly aromatic polyamide, polyphenylene sulfide, aromatic polyamide (paper), glass cloth, fluorine-containing resin, polyvinyl chloride, polyvinylidene chloride, cellulose-, Silicone resins, metals (foils), and the like. When the pressure-sensitive adhesive layer 14 described later is formed of a radiation-curable pressure-sensitive adhesive, the substrate 12 is preferably formed of a material that transmits radiation.
The surface of the base material 12 may be subjected to a conventional surface treatment such as a chemical or physical treatment such as a chromic acid treatment, ozone exposure, flame exposure, high-voltage shock exposure, or an ionizing radiation treatment, or a primer (e.g., an adhesive material described later) coating treatment in order to improve adhesion to an adjacent layer, holding properties, or the like. The same or different materials may be appropriately selected and used for the base material 12, and a plurality of materials may be mixed and used as necessary.
The light transmittance of the substrate 12 at a wavelength of 400nm is preferably 80% or more, more preferably 82% or more. The base material 12 having a light transmittance of 80% or more at a wavelength of 400nm can be obtained by appropriately selecting the material constituting the base material 12.
The higher the light transmittance of the substrate 12 at a wavelength of 400nm, the more preferable it is, but it may be set to 100% or less, for example.
The light transmittance of the base material at a wavelength of 400nm was obtained by the same method as the light transmittance of the die-bonding film at a wavelength of 400 nm.
The thickness of the substrate 12 may be appropriately determined without any particular limitation, but is generally about 5 to 200 μm. Among them, from the viewpoint of light transmittance, it is preferably 50 to 150 μm.
The adhesive used for forming the pressure-sensitive adhesive layer 14 is not particularly limited, and for example, a general pressure-sensitive adhesive such as an acrylic adhesive or a rubber adhesive can be used. As the pressure-sensitive adhesive, an acrylic adhesive containing an acrylic polymer as a base polymer is preferable from the viewpoint of cleaning ability of electronic parts such as semiconductor wafers and glass which are protected from contamination, and cleaning ability with an organic solvent such as ultrapure water or alcohol.
Examples of the acrylic polymer include acrylic polymers using, as a monomer component, one or more kinds of alkyl (meth) acrylates (e.g., linear or branched alkyl esters having 1 to 30 carbon atoms, particularly 4 to 18 carbon atoms, such as alkyl (meth) acrylates (e.g., methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl, tridecyl, tetradecyl, hexadecyl, octadecyl, and eicosyl esters) and cycloalkyl (meth) acrylates (e.g., cyclopentyl, cyclohexyl, and the like). The term "(meth)" used herein means an acrylate and/or a methacrylate, and all of the terms "(meth)" in the present invention have the same meaning.
Among them, the pressure-sensitive adhesive layer 14 preferably contains an acrylic copolymer obtained by polymerizing a monomer raw material containing an alkyl acrylate or an alkyl methacrylate (an ester of acrylic acid or an ester of methacrylic acid) at a ratio of 50% by weight or more. The proportion is more preferably 55% by weight or more, and still more preferably 60% by weight or more. When the pressure-sensitive adhesive layer 14 contains an acrylic copolymer obtained by polymerizing a monomer raw material containing an alkyl acrylate or an alkyl methacrylate in a proportion of 50 wt% or more, the light transmittance of the pressure-sensitive adhesive layer 14 at a wavelength of 400nm can be improved.
The larger the ratio is, the more preferable it is, but it may be set to 100% by weight or less, for example.
The acrylic polymer may contain units corresponding to other monomer components copolymerizable with the alkyl (meth) acrylate or cycloalkyl ester, as necessary, in order to improve cohesive force, heat resistance, and the like. Examples of such monomer components include: carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; anhydride monomers such as maleic anhydride and itaconic anhydride; hydroxyl group-containing monomers such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and methyl (meth) acrylate- (4-hydroxymethylcyclohexyl) methyl ester; sulfonic acid group-containing monomers such as styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acryloyloxynaphthalenesulfonic acid; phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; (ii) acrylamide; acrylonitrile, and the like. These copolymerizable monomer components may be used singly or in combination. The amount of the copolymerizable monomer is preferably 40% by weight or less based on the total monomer components.
The acrylic polymer may contain a polyfunctional monomer or the like as a comonomer component as necessary for crosslinking. Examples of such a polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, and urethane (meth) acrylate. One or two or more of these polyfunctional monomers may be used. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.
The acrylic polymer may be obtained by polymerizing a single monomer or a mixture of two or more monomers. The polymerization may be carried out by any means such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, etc. The content of the low molecular weight substance is preferably small in view of preventing contamination of a clean adherend and the like. From this viewpoint, the number average molecular weight of the acrylic polymer is preferably 10 ten thousand or more, more preferably about 20 ten thousand to 300 ten thousand, and particularly preferably about 30 ten thousand to 150 ten thousand.
In addition, an external crosslinking agent may be suitably used in the binder in order to increase the number average molecular weight of an acrylic polymer or the like as a base polymer. Specific examples of the external crosslinking method include: a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine crosslinking agent to the reaction mixture. In the case of using an external crosslinking agent, the amount thereof to be used may be appropriately determined depending on the balance with the base polymer to be crosslinked and the use as an adhesive. In general, about 5 parts by weight or less, and more preferably 0.1 to 5 parts by weight, is blended with 100 parts by weight of the base polymer. In addition to the above components, various additives such as a tackifier and an antioxidant which are conventionally known may be used in the adhesive as needed.
The pressure-sensitive adhesive layer 14 may be formed using a radiation-curable pressure-sensitive adhesive. The radiation-curable pressure-sensitive adhesive can be easily reduced in adhesive force by increasing the degree of crosslinking by irradiation with radiation such as ultraviolet rays.
For example, by curing the radiation curing type adhesive layer 14 in conformity with the wafer attaching portion 16a of the die bonding film 16 shown in fig. 1, the portion 14a having a significantly reduced adhesive force can be easily formed. Since the die-bonding film 16 is attached to the part 14a, which is cured to have a reduced adhesive force, the interface between the part 14a of the adhesive layer 14 and the die-bonding film 16 has a property of being easily peeled off at the time of pickup. On the other hand, the portion not irradiated with the radiation has sufficient adhesive force, and the portion 14b is formed. The portion 14b may securely hold the wafer ring.
In the case where the die bond film is laminated on the dicing sheet so as to cover the entire dicing sheet, the wafer ring may be fixed to the outer peripheral portion of the die bond film.
The radiation-curable pressure-sensitive adhesive may be one having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness, without any particular limitation. Examples of the radiation-curable pressure-sensitive adhesive include: an addition type radiation curable pressure-sensitive adhesive containing a radiation curable monomer component and an oligomer component is blended with the above-mentioned general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive and a rubber pressure-sensitive adhesive.
Examples of the radiation-curable monomer component to be blended include: urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1, 4-butanediol di (meth) acrylate, and the like. The radiation-curable oligomer component includes various oligomers such as urethane type, polyether type, polyester type, polycarbonate type, polybutadiene type, etc., and the molecular weight thereof is preferably in the range of about 100 to 30000. The amount of the radiation-curable monomer component or oligomer component to be blended may be determined as appropriate depending on the type of the pressure-sensitive adhesive layer, and the amount of the radiation-curable monomer component or oligomer component to be blended may be determined as appropriate depending on the type of the pressure-sensitive adhesive layer. Generally, the amount of the acrylic polymer is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight, based on 100 parts by weight of a base polymer such as an acrylic polymer constituting the adhesive.
In addition to the above-described additive-type radiation-curable pressure-sensitive adhesive, examples of the radiation-curable pressure-sensitive adhesive include: an internal radiation-curable adhesive using a polymer having a carbon-carbon double bond in a side chain or a main chain of the polymer or at a terminal of the main chain as a base polymer. The internal radiation-curable pressure-sensitive adhesive does not need to contain or contain a large amount of oligomer components or the like as low-molecular components, and therefore, the oligomer components or the like do not migrate in the pressure-sensitive adhesive over time, and a pressure-sensitive adhesive layer having a stable layer structure can be formed, which is preferable.
The base polymer having a carbon-carbon double bond may be a base polymer having a carbon-carbon double bond and having an adhesive property, without particular limitation. As such a base polymer, a polymer having an acrylic polymer as a basic skeleton is preferable. The basic skeleton of the acrylic polymer is exemplified by the above-mentioned exemplary acrylic polymers.
The method for introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be employed, but introduction of a carbon-carbon double bond into a polymer side chain is relatively easy in terms of molecular design. For example, the following methods can be mentioned: after a monomer having a functional group is copolymerized with an acrylic polymer in advance, a compound having a functional group reactive with the functional group and a carbon-carbon double bond is subjected to condensation or addition reaction while maintaining the radiation curability of the carbon-carbon double bond.
Examples of combinations of these functional groups include: carboxyl and epoxy groups, carboxyl and aziridinyl groups, hydroxyl and isocyanate groups, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable from the viewpoint of easiness of tracing the reaction. In addition, as long as the combination of these functional groups generates the acrylic polymer having a carbon-carbon double bond, the functional group may be on either side of the acrylic polymer and the compound, and in the preferred combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- α, α -dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, an acrylic polymer obtained by copolymerizing the above exemplified hydroxyl group-containing monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, an ether compound of diethylene glycol monovinyl ether, or the like can be used.
The internal radiation-curable pressure-sensitive adhesive may be used alone as the base polymer having a carbon-carbon double bond (particularly, an acrylic polymer), or may be blended with the radiation-curable monomer component or oligomer component to such an extent that the properties are not impaired. The radiation-curable oligomer component and the like are usually in the range of 30 parts by weight, preferably 0 to 10 parts by weight, based on 100 parts by weight of the base polymer.
The radiation-curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include: α -ketol compounds such as 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α -hydroxy- α, α' -dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, and 1-hydroxycyclohexyl phenyl ketone; acetophenone compounds such as methoxyacetophenone, 2 '-dimethoxy-2-phenylacetophenone, 2' -diethoxyacetophenone and 2-methyl-1- [4- (methylthio) phenyl ] -2-morpholinopropan-1-one; benzoin ether-based compounds such as benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether; ketal compounds such as benzil dimethyl ketal; aromatic sulfonyl chloride compounds such as 2-naphthalenesulfonyl chloride; optically active oxime compounds such as 1-phenone-1, 1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone-based compounds such as benzophenone, benzoylbenzoic acid, and 3, 3' -dimethyl-4-methoxybenzophenone; thioxanthone compounds such as thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2, 4-dimethylthioxanthone, isopropylthioxanthone, 2, 4-dichlorothioxanthone, 2, 4-diethylthioxanthone and 2, 4-diisopropylthioxanthone; camphorquinone; a halogenated ketone; acyl phosphine oxides; acyl phosphonates and the like. The amount of the photopolymerization initiator is, for example, about 0.05 to 20 parts by weight per 100 parts by weight of a base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.
Examples of the radiation-curable pressure-sensitive adhesive include a rubber-based pressure-sensitive adhesive and an acrylic pressure-sensitive adhesive disclosed in jp-a 60-196956, and the rubber-based pressure-sensitive adhesive and the acrylic pressure-sensitive adhesive include: photopolymerizable compounds such as addition polymerizable compounds having two or more unsaturated bonds and alkoxysilanes having epoxy groups; and photopolymerization initiators such as carbonyl compounds, organic sulfur compounds, peroxides, amines, and onium salt compounds.
The radiation-curable pressure-sensitive adhesive layer 14 may contain a compound that is colored by irradiation with radiation, if necessary. By containing a compound that is colored by irradiation with radiation in the pressure-sensitive adhesive layer 14, only the portion irradiated with radiation can be colored. That is, the portion 14a corresponding to the wafer attachment portion 16a shown in fig. 1 may be colored. Thus, it is possible to directly determine whether or not the pressure-sensitive adhesive layer 14 has been irradiated with radiation by visual observation, and the wafer bonding portion 16a can be easily recognized, and the bonding of the workpiece can be facilitated. Further, when a semiconductor chip is detected by a photosensor or the like, the detection accuracy is high, and thus, no malfunction occurs at the time of picking up the semiconductor chip.
The compound colored by irradiation with radiation is colorless or pale before irradiation with radiation, but colored by irradiation with radiation. As a preferred example of the compound, a leuco dye (ロイコ dye) can be mentioned. As leuco dyes, conventional leuco dyes of triphenylmethane type, fluorane type, phenothiazine type, auramine type and spiropyran type can be preferably used. Specific examples thereof include: 3- [ N- (p-tolylamino) ] -7-anilinofluoran, 3- [ N- (p-tolyl) -N-methylamino ] -7-anilinofluoran, 3- [ N- (p-tolyl) -N-ethylamino ] -7-anilinofluoran, 3-diethylamino-6-methyl-7-anilinofluoran, crystal violet lactone, 4 ', 4 "-tris (dimethylamino) triphenylmethanol, 4', 4" -tris (dimethylamino) triphenylmethane, and the like.
The color-developing agent preferably used together with these leuco dyes includes conventionally used electron acceptors such as prepolymers of phenol resins, aromatic carboxylic acid derivatives, and activated clay, and when the color tone is to be changed, various color-developing agents may be used in combination.
The compound colored by irradiation with radiation may be dissolved in an organic solvent or the like and then contained in the radiation-curable pressure-sensitive adhesive, or may be contained in the pressure-sensitive adhesive in the form of fine powder. The amount of the compound is preferably 10 wt% or less, preferably 0.01 to 10 wt%, more preferably 0.5 to 5 wt% in the adhesive layer 14. If the proportion of the compound exceeds 10% by weight, the radiation irradiated to the pressure-sensitive adhesive layer 14 is excessively absorbed by the compound, and thus the curing of the portion 14a of the pressure-sensitive adhesive layer 14 may be insufficient, resulting in insufficient reduction of the adhesive strength. On the other hand, in order to sufficiently color, the proportion of the compound is preferably 0.01% by weight or more.
In the case where the pressure-sensitive adhesive layer 14 is formed of a radiation-curable pressure-sensitive adhesive, a part of the pressure-sensitive adhesive layer 14 may be irradiated with radiation so that the adhesive force of the part 14a in the pressure-sensitive adhesive layer 14 is smaller than the adhesive force of the other part 14 b.
Examples of a method for forming the portion 14a in the adhesive layer 14 include: a method of forming the radiation-curable pressure-sensitive adhesive layer 14 on the base material 12 and then partially irradiating the portion 14a with radiation to cure the layer. The local irradiation with radiation may be performed by a photomask having a pattern corresponding to a portion of the die-bonding film 16 other than the wafer attachment portion 16 a. Further, a method of curing by spot-irradiation with ultraviolet rays may be mentioned. The radiation-curable pressure-sensitive adhesive layer 14 can be formed by transferring the radiation-curable pressure-sensitive adhesive layer provided on the separator to the base material 12. The partial radiation curing may be performed on the radiation-curable pressure-sensitive adhesive layer 14 provided on the separator.
In the case where the pressure-sensitive adhesive layer 14 is formed using a radiation-curable pressure-sensitive adhesive, a substrate may be used in which the entire or part of at least one surface of the substrate 12 except for the portion corresponding to the wafer attachment portion 16a is shielded from light, and the portion corresponding to the wafer attachment portion 16a may be cured by irradiating the substrate with radiation after the radiation-curable pressure-sensitive adhesive layer 14 is formed on the substrate, thereby forming the portion 14a having a reduced adhesive strength. As the light shielding material, a material capable of serving as a photomask can be formed on the support film by printing, vapor deposition, or the like. By the manufacturing method, the die-bonding film 10 with dicing sheet can be efficiently manufactured.
When curing inhibition occurs by oxygen during irradiation with radiation, it is preferable to isolate oxygen (air) from the surface of the radiation-curable pressure-sensitive adhesive layer 14 by any method. Examples of the method of isolating oxygen include: a method of covering the surface of the pressure-sensitive adhesive layer 14 with a separator, a method of irradiating the pressure-sensitive adhesive layer with radiation such as ultraviolet rays in a nitrogen atmosphere, or the like.
The thickness of the pressure-sensitive adhesive layer 14 is not particularly limited, but is preferably about 1 μm to 50 μm from the viewpoint of preventing chipping of the die cut surface, fixing and holding of the die-bonding film 16, and the like. More preferably 2 to 30 μm, and still more preferably 5 to 25 μm.
The light transmittance of the pressure-sensitive adhesive layer 14 at a wavelength of 400nm is preferably 80% or more, more preferably 82% or more. The pressure-sensitive adhesive layer 14 having a light transmittance of 80% or more at a wavelength of 400nm can be obtained by appropriately selecting the material constituting the pressure-sensitive adhesive layer 14.
The higher the light transmittance of the pressure-sensitive adhesive layer 14 at a wavelength of 400nm, the more preferable it is, but it may be set to 100% or less, for example.
The light transmittance of the adhesive layer at a wavelength of 400nm was obtained by the same method as that of the die-bonding film at a wavelength of 400 nm.
The light transmittance at a wavelength of 400nm of the dicing sheet-attached die-bonding film 10 before heat curing is preferably 50% or more, more preferably 55% or more, and further preferably 60% or more. If the light transmittance at a wavelength of 400nm of the die-bonding film with a dicing sheet 10 before thermosetting is larger than 50%, it is possible to more easily find whether or not there is a chip on the back surface or the side surface of the semiconductor chip in a state where the die-bonding film with a dicing sheet 10 is attached to the back surface of the semiconductor chip.
Examples of a method for making the light transmittance of the die-bonding film with a dicing sheet 10 at a wavelength of 400nm to be 50% or more include: a method of selecting a substrate having a light transmittance at a wavelength of 400nm or more as the substrate 12, a method of selecting a pressure-sensitive adhesive having a light transmittance at a wavelength of 400nm or more as the pressure-sensitive adhesive 14, and a method of selecting a die-bonding film having a light transmittance at a wavelength of 400nm or more as the die-bonding film 16.
The higher the light transmittance at a wavelength of 400nm of the die-bonding film 10 with a dicing sheet is, the more preferable it is, for example, 100% or less.
The light transmittance at a wavelength of 400nm of the die-bonding film with the dicing sheet was obtained based on the same method as the light transmittance at a wavelength of 400nm of the die-bonding film.
The die-bonding film 16 of the die-bonding film 10 with the dicing sheet is preferably protected by a spacer (not shown). The spacer has a function as a protective material for protecting the die-bonding film 16 before being supplied for practical use. The separator may also be used as a support base material when the die bond film 16 is transferred to the pressure-sensitive adhesive layer 14. The separator is peeled off when a work (semiconductor wafer) is attached to the die-bonding film 16 of the die-bonding film 10 with the dicing sheet. As the separator, polyethylene terephthalate (PET), polyethylene, polypropylene, or a plastic film or paper coated with a release agent such as a fluorine-containing release agent or a long-chain alkyl acrylate release agent may be used.
The die-bonding film with a dicing sheet 10 according to the present embodiment is produced, for example, as follows.
First, the substrate 12 can be formed into a film by a conventionally known film formation method. Examples of the film forming method include: a calendering film-forming method, a casting method in an organic solvent, a blow extrusion method in a closed system, a T-die extrusion method, a coextrusion method, a dry lamination method, and the like.
Then, after a coating film is formed by applying the adhesive composition solution to the base material 12, the coating film is dried under predetermined conditions (heat crosslinking is performed as needed), thereby forming the adhesive layer 14. The coating method is not particularly limited, and examples thereof include: roll coating, screen coating, gravure coating, and the like. The drying conditions may be, for example, in the range of 80 to 150 ℃ for 0.5 to 5 minutes. Alternatively, the pressure-sensitive adhesive layer 14 may be formed by applying the pressure-sensitive adhesive composition to a separator to form a coating film and then drying the coating film under the above-described drying conditions. The adhesive layer 14 is then adhered to the substrate 12 along with the spacer. Thus, the dicing sheet 11 is produced.
The die-bonding film 16 is produced, for example, as follows.
First, an adhesive composition solution as a material for forming the die bond film 16 is prepared. The adhesive composition solution is mixed with the resin and other additives as required, as described above.
Then, the adhesive composition solution is applied to the base material separator to a predetermined thickness to form a coating film, and the coating film is dried under predetermined conditions to form the die bonding film 16. The coating method is not particularly limited, and examples thereof include: roll coating, screen coating, gravure coating, and the like. The drying conditions may be, for example, in the range of 70 to 160 ℃ for a drying time of 1 to 5 minutes. Alternatively, the die-bonding film 16 may be formed by applying a pressure-sensitive adhesive composition solution to the separator to form a coating film and then drying the coating film under the above-described drying conditions. Thereafter, the adhesive layer is adhered to the substrate separator together with the separator.
Next, the separator is peeled off from each of the dicing sheet 11 and the die bonding film 16, and the adhesive layer 14 and the die bonding film 16 are bonded so as to form a bonding surface. The fitting may be performed by, for example, crimping. In this case, the laminating temperature is not particularly limited, and is, for example, preferably 30 to 50 ℃ and more preferably 35 to 45 ℃. The line pressure is not particularly limited, but is, for example, preferably 0.1kgf/cm to 20kgf/cm, more preferably 1kgf/cm to 10 kgf/cm. Thus, the die bond film 10 with the dicing sheet can be obtained.
(method of manufacturing semiconductor device)
Next, a method for manufacturing a semiconductor device will be described.
A method for manufacturing a semiconductor device using the die bond film 10 with a dicing sheet will be described below. However, in the present invention, the semiconductor device may be manufactured using the die bond film 16 without using the die bond film 10 with a dicing sheet. In this case, the step of obtaining the dicing sheet-attached die bonding film 10 by bonding the dicing sheet 11 to the die bonding film 16 may not be performed, and the same method as the method of manufacturing the semiconductor device using the dicing sheet-attached die bonding film 10 may be performed. Therefore, a method for manufacturing a semiconductor device using the die bonding film 10 with a dicing sheet will be described below.
The method for manufacturing a semiconductor device according to the present embodiment includes:
a preparation step of preparing the die bonding film with the dicing sheet;
a bonding step of bonding the die bonding film of the die bonding film with dicing sheet to the back surface of the semiconductor wafer;
a dicing step of dicing the semiconductor wafer together with the die bonding film to form a chip-shaped semiconductor chip;
a pickup step of picking up the semiconductor chip together with the die bonding film from the die bonding film with the dicing sheet; and
and a die bonding step of die bonding the semiconductor chip to an adherend via the die bonding film.
In the method of manufacturing a semiconductor device according to the present embodiment, first, the die bond film 10 with the dicing sheet is prepared (preparation step). The die-bonding film 10 with a dicing sheet is used as follows after a separator arbitrarily provided on the die-bonding film 16 is appropriately peeled off. Hereinafter, a case of using the die bond film 10 with a dicing sheet will be described as an example with reference to fig. 1 and 2.
First, the semiconductor wafer 4 is pressed against the semiconductor wafer attaching portion 16a of the die bonding film 16 in the die bonding film 10 with dicing blade, and is fixed by being adhered and held (attaching step). This step is performed while pressing with a pressing means such as a pressure roller. The temperature for bonding at the time of mounting is not particularly limited, and is preferably in the range of 40 to 90 ℃.
Then, the semiconductor wafer 4 is diced (dicing step). In this way, the semiconductor wafer 4 is cut into pieces having a predetermined size, and the semiconductor chips 5 are manufactured. The method of dicing is not particularly limited, and for example, it is performed from the circuit surface side of the semiconductor wafer 4 according to a conventional method. In this step, for example, a dicing method called full dicing, which cuts into the die bonding film 10 with a dicing sheet, may be employed. The cutting device used in this step is not particularly limited, and a conventionally known cutting device can be used. Further, since the semiconductor wafer 4 is bonded and fixed by the die bonding film 10 with dicing sheet, chipping and scattering of chips can be suppressed, and breakage of the semiconductor wafer 4 can also be suppressed.
In the present embodiment, a die-bonding film with a dicing sheet 10 in which a die-bonding film 16 having a light transmittance T1 (%) of 80% or more at a wavelength of 400nm before heat curing and a dicing sheet 11 having a light transmittance of more than 80% at a wavelength of 400nm are stacked is used. Therefore, after dicing, it can be easily found from the dicing sheet 11 side whether or not there is a chip on the back surface or the side surface of the semiconductor chip. The presence or absence of the debris can be confirmed, for example, by using an optical microscope.
Then, the semiconductor chip 5 is picked up in order to peel off the semiconductor chip 5 adhesively fixed to the die bonding film 10 with the dicing sheet (pickup step). The pickup method is not particularly limited, and various methods known in the art may be used. For example, a method of pushing up each semiconductor chip 5 from the die bonding film 10 side with a dicing sheet with a needle and picking up the pushed-up semiconductor chip 5 by a pickup device may be mentioned.
The pick-up condition is preferably such that the pin-up speed is 5 to 100 mm/sec, more preferably 5 to 10 mm/sec, from the viewpoint of preventing chipping.
Here, when the pressure-sensitive adhesive layer 2 is of a radiation-curable type, the pickup is performed after the pressure-sensitive adhesive layer 2 is irradiated with radiation. This reduces the adhesive strength of the adhesive layer 2 to the die-bonding film 16, and facilitates the peeling of the semiconductor chip 5. As a result, the pickup can be performed without damaging the semiconductor chip 5. Conditions such as irradiation intensity and irradiation time in irradiation with radiation are not particularly limited, and can be appropriately set as necessary. As the light source for irradiation with radiation, a known light source can be used. In the case where the pressure-sensitive adhesive layer is irradiated with radiation and cured in advance, and the cured pressure-sensitive adhesive layer is bonded to the die-bonding film, the radiation irradiation here is not required.
Then, the picked-up semiconductor chip 5 is adhesively fixed to the adherend 6 by the die bonding film 16 (die bonding step). The adherend 6 may be a lead frame, a TAB film, a substrate, a separately produced semiconductor chip, or the like. The adherend 6 may be, for example, a deformable adherend that is easily deformed, or may be a non-deformable adherend (semiconductor wafer or the like) that is not easily deformed.
As the substrate, a conventionally known substrate can be used. As the lead frame, a metal lead frame such as a Cu lead frame or a 42 alloy lead frame, or an organic substrate made of glass epoxy, BT (bismaleimide-triazine), polyimide, or the like can be used. However, the present invention is not limited to these, and includes a circuit board that can be used after mounting and electrically connecting a semiconductor element.
Then, since the die-bonding film 16 is of a thermosetting type, the semiconductor chip 5 is adhesively fixed to the adherend 6 by heat curing, and the heat-resistant strength is improved (thermosetting step). The heating may be carried out at a heating temperature of 80 to 200 ℃, preferably 100 to 175 ℃, and more preferably 100 to 140 ℃. The heating may be carried out for a heating time of 0.1 to 24 hours, preferably 0.1 to 3 hours, and more preferably 0.2 to 1 hour. In addition, the heat curing may be performed under pressurized conditions. The pressurizing condition is preferably 1 to 20kg/cm2More preferably 3 to 15kg/cm2Within the range of (1). The heat curing under pressure may be performed, for example, in a chamber filled with an inert gas. The object obtained by bonding and fixing the semiconductor chip 5 to a substrate or the like via the die bonding film 16 may be subjected to a reflow process.
In the die-bonding film 16 of the present embodiment, the difference (T1-T2) between the T1 (light transmittance at a wavelength of 400nm before thermal curing) and the T2 (light transmittance at a wavelength of 400nm after heating at 120 ℃ for 1 hour) is 20% or less. Therefore, the light-transmitting resin composition also has a certain degree of light transmittance after heat curing. Therefore, even in the state after thermosetting, it can be easily found whether or not the chips are present on the back surface and the side surface of the semiconductor chip.
The shear adhesion of the die-bonding film 16 after heat curing is preferably 0.2MPa or more, and more preferably 0.2 to 10MPa, with respect to the adherend 6. If the shear adhesion of the die bond film 16 is at least 0.2MPa or more, the adhesive surface of the die bond film 16 and the semiconductor chip 5 or the adherend 6 is not shear-deformed by ultrasonic vibration or heating in the wire bonding step. That is, the semiconductor chip is not moved by ultrasonic vibration at the time of wire bonding, and thus the success rate of wire bonding can be prevented from being lowered.
Then, as shown in fig. 2, the tip of the terminal portion (inner lead) of the adherend 6 is electrically connected to an electrode pad (not shown) on the semiconductor chip 5 by a bonding wire 7 as necessary (wire bonding step). As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The temperature at which wire bonding is performed is in the range of 80 to 250 c, preferably 80 to 220 c. In addition, the heating time is several seconds to several minutes. The wire is connected by a combination of vibration energy using ultrasonic waves and pressure bonding energy using pressure in a state heated to the temperature range. This step can be performed without performing thermal curing of the die bond film 16.
Then, as shown in fig. 2, the semiconductor chip 5 is sealed with a sealing resin 8 as necessary (sealing step). This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step is performed by molding the sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is usually from 60 seconds to 90 seconds at 175 ℃, but the present invention is not limited thereto, and curing may be carried out for several minutes at 165 ℃ to 185 ℃. Thereby, the sealing resin 8 is cured, and the semiconductor chip 5 is fixed to the adherend 6 through the die bonding film 16. That is, in the present invention, even when the post-curing step described later is not performed, the die bonding film 16 can be fixed in this step, which contributes to a reduction in the number of manufacturing steps and a reduction in the manufacturing time of the semiconductor device. In the sealing step, a method of embedding the semiconductor chip 5 in a sheet-like sealing sheet may be employed (for example, see japanese patent application laid-open No. 2013-7028).
Then, if necessary, heating is performed to completely cure the sealing resin 8 that has not been sufficiently cured in the sealing step (post-curing step). Even in the case where the die bond film 16 is not completely heat cured in the sealing process, the die bond film 16 may be completely heat cured together with the sealing resin 8 in the present process. The heating temperature in this step varies depending on the type of the sealing resin, and is, for example, in the range of 165 to 185 ℃ and the heating time is about 0.5 to 8 hours.
In the method for manufacturing a semiconductor device according to the present embodiment, after the temporary fixing by the die bonding step, wire bonding may be performed without a thermosetting step by a heat treatment of the die bonding film 16, and then the semiconductor chip 5 may be sealed with the sealing resin 8 and the sealing resin 8 may be cured (post-cured). In this case, the shear adhesion force at the time of temporary fixation of the die-bonding film 16 is preferably 0.2MPa or more, and more preferably 0.2 to 10MPa, with respect to the adherend 6. If the shear adhesion force at the time of temporary fixation of the die bond film 16 is at least 0.2MPa or more, even if the wire bonding step is performed without the heating step, the adhesive surface of the die bond film 16 and the semiconductor chip 5 or the adherend 6 is not shear-deformed by ultrasonic vibration or heating in the step. That is, the semiconductor chip is not moved by ultrasonic vibration at the time of wire bonding, and thus the success rate of wire bonding can be prevented from being lowered. The temporary fixation means a state in which the die bond film is cured (semi-cured) to fix the semiconductor chip 5 so that the curing reaction of the die bond film does not completely progress to the extent that the curing reaction does not cause any trouble in the subsequent process. When wire bonding is performed without a thermosetting step by heat treatment of the die bonding film, the post-curing step corresponds to the thermosetting step in this specification.
The die-bonding film with a dicing sheet of the present invention is also suitable for use in the case where a plurality of semiconductor chips are stacked and three-dimensionally mounted. In this case, the die bond film and the spacer may be stacked between the semiconductor chips, or only the die bond film may be stacked between the semiconductor chips without stacking the spacer, and may be appropriately changed depending on the manufacturing conditions, the application, and the like.
Examples
Hereinafter, preferred embodiments of the present invention will be described in detail by way of examples. However, the materials, amounts and the like described in the examples are not intended to limit the scope of the present invention unless otherwise specifically limited. In the following, parts are parts by weight.
< preparation of die bonding film >
(example 1)
The following (a) to (c) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23 wt%.
(a) Acrylate copolymer comprising ethyl acrylate, butyl acrylate and acrylonitrile as main monomers (tradename: SG-P3, tradename: Rex., Ltd.; content of each main monomer: 30 wt% of ethyl acrylate, 39 wt% of butyl acrylate and 28 wt% of acrylonitrile)
100 portions of
(b) Epoxy resin (product name: YX-8034 (alicyclic epoxy resin); manufactured by Mitsubishi chemical corporation)
26 portions of
(c) Acid anhydride (manufactured by Nissi Nippon Risk Co., Ltd., product name: MH-700 (alicyclic acid anhydride))
24 portions of
The adhesive composition solution was applied to a release-treated film (release liner) formed of a polyethylene terephthalate film having a thickness of 38 μm after silicone release treatment, and then dried at 130 ℃ for 2 minutes. Thus, a die-bonding film A having a thickness of 20 μm was produced.
(example 2)
The following (a) to (b) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23 wt%.
(a) Acrylate copolymer comprising ethyl acrylate, butyl acrylate and acrylonitrile as main monomers (tradename: SG-P3, tradename: Rex., Ltd.; content of each main monomer: 30 wt% of ethyl acrylate, 39 wt% of butyl acrylate and 28 wt% of acrylonitrile)
100 portions of
(b) Acid anhydride (manufactured by Nissi Nippon Risk Co., Ltd., product name: MH-700 (alicyclic acid anhydride))
10 portions of
The adhesive composition solution was applied to a release-treated film (release liner) formed of a polyethylene terephthalate film having a thickness of 38 μm after silicone release treatment, and then dried at 130 ℃ for 2 minutes. Thus, a die-bonding film B having a thickness of 20 μm was produced.
(example 3)
The following (a) to (c) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23 wt%.
(a) Acrylate copolymer comprising butyl acrylate and acrylonitrile AS main monomers (tradename: SG-700AS, tradename: 38 wt% of ethyl acrylate, 40 wt% of butyl acrylate, and 17 wt% of acrylonitrile AS main monomers.)
100 portions of
(b) Epoxy resin (product name: YX-8034 (alicyclic epoxy resin); manufactured by Mitsubishi chemical corporation)
14 portions of
(c) Silica Filler (product name: SO-E2 manufactured by Admatechs corporation)
15 portions of
The adhesive composition solution was applied to a release-treated film (release liner) formed of a polyethylene terephthalate film having a thickness of 38 μm after silicone release treatment, and then dried at 130 ℃ for 2 minutes. Thus, a die bond film C having a thickness of 20 μm was produced.
Comparative example 1
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23 wt%.
(a) Acrylate copolymer comprising butyl acrylate and acrylonitrile AS main monomers (tradename: SG-700AS, tradename: 38 wt% of ethyl acrylate, 40 wt% of butyl acrylate, and 17 wt% of acrylonitrile AS main monomers.)
100 portions of
(b) Epoxy resin (product name: HP-7200L, manufactured by DIC Co., Ltd.)
23 portions of
(c) Phenol resin (product name: MEH-7500, manufactured by Minghe Chemicals Co., Ltd.)
25 portions of
(d) Filler (product name: SO-E5, manufactured by Admatechs corporation, average particle diameter: 1.5 μm)
30 portions of
The adhesive composition solution was applied to a release-treated film (release liner) formed of a polyethylene terephthalate film having a thickness of 38 μm after silicone release treatment, and then dried at 130 ℃ for 2 minutes. Thus, a die bonding film D having a thickness of 20 μm was produced.
Comparative example 2
The following (a) to (c) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23 wt%.
(a) Acrylate copolymer comprising butyl acrylate and acrylonitrile AS main monomers (tradename: SG-700AS, tradename: 38 wt% of ethyl acrylate, 40 wt% of butyl acrylate, and 17 wt% of acrylonitrile AS main monomers.)
100 portions of
(b) Epoxy resin (product name: HP-7200L, manufactured by DIC Co., Ltd.)
23 portions of
(c) Phenol resin (product name: MEH-7500, manufactured by Minghe Chemicals Co., Ltd.)
25 portions of
The adhesive composition solution was applied to a release-treated film (release liner) formed of a polyethylene terephthalate film having a thickness of 38 μm after silicone release treatment, and then dried at 130 ℃ for 2 minutes. Thus, a die-bonding film E having a thickness of 20 μm was produced.
Comparative example 3
The following (a) to (b) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23 wt%.
The following (a) to (b) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23 wt%.
(a) Acrylate copolymer comprising butyl acrylate and acrylonitrile AS main monomers (tradename: SG-700AS, tradename: 38 wt% of ethyl acrylate, 40 wt% of butyl acrylate, and 17 wt% of acrylonitrile AS main monomers.)
100 portions of
(b) Epoxy resin (product name: HP-7200L, manufactured by DIC Co., Ltd.)
35 portions of
The adhesive composition solution was applied to a release-treated film (release liner) formed of a polyethylene terephthalate film having a thickness of 38 μm after silicone release treatment, and then dried at 130 ℃ for 2 minutes. Thus, a die-bonding film F having a thickness of 20 μm was produced.
(measurement of light transmittance T1 at a wavelength of 400nm of a die-bonding film before thermal curing)
The light transmittance at a wavelength of 400nm of the die-bonding films according to examples and comparative examples was measured. Specifically, the die-bonding films (thickness: 20 μm) according to examples and comparative examples were measured under the following conditions, and the light transmittance (%) at 400nm was determined. The results are shown in Table 1.
< conditions for measuring light transmittance >
A measuring device: ultraviolet visible near-infrared spectrophotometer V-670DS (manufactured by Japan Spectroscopy Co., Ltd.)
Wavelength scanning speed: 2000nm/min
Measurement range: 300 to 1200nm
An integrating sphere unit: ISN-723
Point diameter: 1cm square
(measurement of light transmittance T2 at wavelength 400nm after heating the die-bonding film at 120 ℃ for 1 hour)
The die-bonding films according to examples and comparative examples were heated at 120 ℃ for 1 hour. Thereafter, the light transmittance at a wavelength of 400nm was measured. The measurement conditions were the same as those of the light transmittance T1. The results are shown in Table 1.
In addition, the difference between T1 and T2 (T1-T2), and the ratio of T1 to T2, T2/T1, are also shown in Table 1.
(measurement of loss elastic modulus of die-bonding film at 120 ℃ C.)
The loss modulus of elasticity at 120 ℃ of the die-bonding films according to examples and comparative examples was measured. Specifically, the die-bonding films of examples and comparative examples were laminated to a thickness of 200 μm, respectively, to obtain measurement samples having a width of 10mm and a length of 40 mm. Then, the loss elastic modulus at-50 to 300 ℃ was measured using a dynamic viscoelasticity measuring apparatus (RSA (III), manufactured by Rheometrics technologies) under conditions of a chuck pitch of 22.5mm, a frequency of 1Hz, and a temperature rise rate of 10 ℃/min, and the loss elastic modulus at 120 ℃ in this case was used.
< dicing sheet >
Dicing sheets A according to examples 1 to 3 and comparative examples 1 to 3 (common to examples 1 to 3 and comparative examples 1 to 3) were prepared as follows.
In a reaction vessel equipped with a condenser, a nitrogen inlet tube, a thermometer and a stirrer, 70 parts of 2-ethylhexyl acrylate (2EHA), 25 parts of 2-hydroxyethyl acrylate (HEA), 0.2 part of peracidified benzoyl and 60 parts of toluene were charged, and the mixture was polymerized at 61 ℃ for 6 hours in a nitrogen stream to obtain acrylic polymer a.
To the acrylic polymer A, 10 parts of 2-methacryloyloxyethyl isocyanate (MOI) was added, and the resulting mixture was subjected to an addition reaction at 50 ℃ for 48 hours in an air stream to obtain an acrylic polymer A'.
Then, 4 parts of a photopolymerization initiator (trade name "Irgacure 651", product of Ciba specialty Chemicals) was added to 100 parts of the acrylic polymer A' to prepare a pressure-sensitive adhesive solution.
The adhesive solution prepared in the above was coated on the silicone-treated side of the PET release liner, and heat-crosslinked at 120 ℃ for 2 minutes to form an adhesive layer precursor having a thickness of 20 μm. Then, a substrate film having a thickness of 80 μm and a 2-layer structure of a polypropylene layer (thickness 40 μm) and a polyethylene layer (thickness 40 μm) was prepared, and the substrate film was bonded to the surface of the adhesive precursor with the polypropylene layer as a bonding surface. The adhesive layer was formed by irradiating ultraviolet rays of 500mJ only to a portion (diameter: 220mm) of the adhesive layer precursor corresponding to a semiconductor wafer-attaching portion (diameter: 200 mm). Thus, a dicing sheet a according to example 1 was obtained.
(measurement of light transmittance at wavelength of 400nm of cut piece)
The light transmittance at a wavelength of 400nm of the cut sheets according to examples and comparative examples was measured. Specifically, the cut pieces (thickness: 100 μm) of examples and comparative examples were measured under the following conditions, and the light transmittance (%) at 400nm was determined. The results are shown in Table 1.
< conditions for measuring light transmittance >
A measuring device: ultraviolet visible near-infrared spectrophotometer V-670DS (manufactured by Japan Spectroscopy Co., Ltd.)
Speed: 2000nm/min
Measurement range: 300 to 1200nm
Integrating sphere: ISN-723
Point diameter: 1cm square
< production of die-bonding film with dicing sheet >
(example 1)
The die bond film a and the dicing sheet a were bonded to each other, thereby obtaining a die bond film a with a dicing sheet according to example 1. The bonding conditions were 40 ℃, 10 mm/sec, and a line pressure of 30 kgf/cm.
(example 2)
The die bond film B was bonded to the dicing sheet a to obtain a die bond film B with a dicing sheet according to example 2. The bonding conditions were 40 ℃, 10 mm/sec, and a line pressure of 30 kgf/cm.
(example 3)
The die bond film C was bonded to the dicing sheet a to obtain a die bond film B with a dicing sheet according to example 2. The bonding conditions were 40 ℃, 10 mm/sec, and a line pressure of 30 kgf/cm.
Comparative example 1
The die bond film D was bonded to the dicing sheet a to obtain a die bond film C with a dicing sheet according to comparative example 1. The bonding conditions were 40 ℃, 10 mm/sec, and a line pressure of 30 kgf/cm.
Comparative example 2
The die bond film E was bonded to the dicing sheet a to obtain a die bond film D with a dicing sheet according to comparative example 2. The bonding conditions were 40 ℃, 10 mm/sec, and a linear pressure of 30 kgf/cm.
Comparative example 3
The die bond film F was bonded to the dicing sheet a to obtain a die bond film E with a dicing sheet according to comparative example 3. The bonding conditions were 40 ℃, 10 mm/sec, and a linear pressure of 30 kgf/cm.
(measurement of light transmittance at wavelength of 400nm of die-bonding film with dicing sheet)
The light transmittance at a wavelength of 400nm of the die-bonding films with a dicing sheet according to the examples and comparative examples was measured. Specifically, the dicing sheet-attached die-bonding films (thickness: 120 μm) according to examples and comparative examples were measured under the following conditions, and the light transmittance (%) at 400nm was determined. The results are shown in Table 1.
< conditions for measuring light transmittance >
A measuring device: ultraviolet visible near-infrared spectrophotometer V-670DS (manufactured by Japan Spectroscopy Co., Ltd.)
Speed: 2000nm/min
Measurement range: 300 to 1200nm
Integrating sphere: ISN-723
Point diameter: 1cm square
(evaluation of confirmation of Back chips)
The die-bonding films with dicing sheets according to examples and comparative examples were bonded to a semiconductor wafer (diameter: 12 inches, thickness: 50 μm) by roll bonding, and then diced. The conditions of the roll press-bonding are as follows < bonding conditions >. The dicing was performed to obtain a full cut of a 10mm square chip size. The conditions for cleavage were as described in < cleavage conditions > below.
< bonding conditions >
A pasting device: ridong essence mechanism, MA-3000II
Pasting speed: 10mm/min
Sticking pressure: 0.15MPa
Platform temperature at the time of pasting: 40 deg.C
< cutting conditions >
A cutting device: DFD-6361 manufactured by DISCO Ltd
Cutting a ring: 2-8-1 (manufactured by DISCO Co., Ltd.)
Cutting speed: 80mm/sec
Cutting blade:
z1; 2050HEDD manufactured by DISCO Co
Z2; 2050HEBB manufactured by DISCO Ltd
Cutting blade rotation speed:
Z1；40,000rpm
Z2；40,000rpm
the height of the blade is as follows:
Z1；0.170mm
Z2；0.090mm
cutting mode: a mode/step cut
Wafer chip size: 10.0mm square
After that, whether or not the back surface chipping of the chip can be confirmed from the dicing sheet side is evaluated. Specifically, whether the state of the back surface of the chip can be confirmed is evaluated by visual observation. The evaluation was good when the state of the back surface of the chip could be confirmed, and the evaluation was x when the state could not be confirmed. The evaluation good does not mean that chips are present on the back surface of the chip, but means that the back surface can be confirmed. Similarly, the evaluation of "x" does not mean that no chip is present on the back surface of the chip, but means that the back surface cannot be confirmed. The results are shown in Table 1.
(evaluation of confirmation of side chips after Heat treatment)
After the evaluation of the back surface chipping was confirmed, the chip with the die bonding film was picked up and bonded to the mirror surface chip. The pickup conditions and the chip bonding conditions are as follows.
< pickup Condition >
The device comprises the following steps: SPA-300, a chip bonder, manufactured by Xinchuan corporation
The number of needles: 5
Pickup height (ハイト): 400 μm
< chip bonding conditions >
The device comprises the following steps: SPA-300, a chip bonder, manufactured by Xinchuan corporation
Temperature: 120 deg.C
Loading: 10N
Time: 1 second
After the chip bonding, the sample was heated with a drier at 120 ℃ for 1 hour, and then whether or not the side chips of the chip could be confirmed was evaluated. Specifically, whether or not the state of the side surface of the chip can be confirmed is evaluated by visual observation. The condition in which the side surface of the chip was able to be observed was evaluated as "o", and the condition in which the side surface was not able to be observed was evaluated as "x". The results are shown in Table 1.
[ TABLE 1 ]
Example 1 Example 2 Example 3 Comparative example 1 Comparative example 2 Comparative example 3
Light transmittance T1 (%) 93 94 90 78 83 88
Light transmittance T2 (%) 84 92 72 55 59 65
T1-T2(％) 9 2 12 23 24 23
T2/T1 0.90 0.98 0.80 0.71 0.71 0.74
Loss modulus of elasticity (MPa) of die-bonding film at 120 deg.C 0.07 0.24 0.35 0.22 0.03 0.04
Transmittance at wavelength of 400nm (%) 85 85 85 85 85 85
Light transmittance at wavelength of 400nm (%) 77 79 65 48 50 53
Whether or not to confirm the back chip ○ ○ ○ × ○ ○
Whether side chips could be confirmed after heat treatment ○ ○ ○ × × ×

Claims (8)

1. A die-bonding film characterized in that,
wherein the T1 is 80% or more and the T1-T2 which is the difference between the T1 and the T2 is 20% or less, where T1 (%) is the light transmittance at a wavelength of 400nm before thermal curing and T2 (%) is the light transmittance at a wavelength of 400nm after heating at 120 ℃ for 1 hour,
the die-bonding film contains 50 wt% or more of an acrylic copolymer based on the total organic resin component,
the acrylic copolymer is obtained by polymerizing a monomer raw material containing alkyl acrylate or alkyl methacrylate and other monomers in a proportion of 50 wt% or more,
the other monomer is selected from acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, crotonic acid, maleic anhydride, itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, 4-hydroxymethylcyclohexyl (4-hydroxymethylcyclohexyl) methyl acrylate, styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid, methacryloyloxynaphthalenesulfonic acid, crotonic acid, maleic anhydride, A monomer of acryloyl 2-hydroxyethyl phosphate,
the die-bonding film contains at least 1 selected from alicyclic epoxy resins and alicyclic acid anhydrides as a thermosetting resin.
2. The die-bonding film according to claim 1,
the ratio T2/T1 of the T1 to the T2 is in the range of 0.75 to 1.0.
3. A die-bonding film with a dicing sheet, which is the die-bonding film with a dicing sheet having the die-bonding film according to claim 1 provided on the dicing sheet,
the light transmittance of the cutting piece under the wavelength of 400nm is more than 80%.
4. The die-bonding film with dicing sheet according to claim 3,
the light transmittance of the chip bonding film with the cutting sheet before thermal curing at the wavelength of 400nm is more than 50%.
5. The die-bonding film with dicing sheet according to claim 3,
the cutting sheet is composed of a base material and an adhesive layer,
the pressure-sensitive adhesive layer contains an acrylic copolymer obtained by polymerizing a monomer raw material containing an alkyl acrylate or an alkyl methacrylate at a ratio of 50 wt% or more.
6. The die-bonding film with dicing sheet according to claim 3,
the loss elastic modulus of the chip bonding film at 120 ℃ is 0.05 MPa-0.5 MPa.
7. A semiconductor device is characterized in that a semiconductor element,
the die-bonding film according to claim 1 or 2 or the die-bonding film with a dicing sheet according to any one of claims 3 to 6.
8. A method for manufacturing a semiconductor device, comprising:
a preparation step of preparing the die-bonding film with dicing sheet according to any one of claims 3 to 6;
a bonding step of bonding the die bonding film of the die bonding film with dicing sheet to the back surface of the semiconductor wafer;
a dicing step of dicing the semiconductor wafer together with the die bonding film to form a chip-shaped semiconductor chip;
a pickup step of picking up the semiconductor chip together with the die bonding film from the die bonding film with the dicing sheet; and
and a die bonding step of die bonding the semiconductor chip to an adherend via the die bonding film.
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