TWI591701B - Tapes for semiconductor processing and semiconductor devices manufactured using the same - Google Patents

Description

Tape for semiconductor processing and semiconductor device manufactured using the same

The present invention relates to an expandable semiconductor processing tape and a semiconductor device manufactured using the semiconductor processing tape; the semiconductor processing tape is in a dicing step of separating a semiconductor wafer into wafer-like elements, Can be utilized for fixing a semiconductor wafer, and can also be utilized in a die bonding step or a rmounting step between the wafer after the dicing and the wafer or the substrate, and at the same time The step of separating the adhesive layer along the wafer by expansion is utilized.

In the past, in the manufacturing process of a semiconductor device such as an integrated circuit (IC: Integrated Circuit), a back grinding step of grinding the back surface of the wafer for forming a wafer after forming a thin film pattern is performed; a step of separating a wafer into wafer units after attaching a tape for semiconductor processing having adhesiveness and stretchability; expanding (expanding) an expanding step of the tape for semiconductor processing, and picking up a step of picking up the separated wafer; The picked wafer is then attached to a lead frame or package substrate, etc. (or stacked In a stacked package, a wafer bonding (mounting) step of laminating wafers to each other is performed.

In the above-described back grinding step, in order to protect the circuit pattern forming surface (wafer surface) of the wafer from contamination, a surface protective tape is used. After the surface of the wafer is peeled off from the surface of the wafer, the semiconductor processing tape (cut ‧ wafer bonding tape) described below is bonded to the back surface of the wafer, and the semiconductor processing is performed. The tape side is fixed on a suction table, and after the surface protective tape is subjected to a treatment for lowering the adhesion of the wafer, the surface protective tape is peeled off. The surface protection tape is subjected to the peeling of the wafer, and then the wafer is attached to the back surface, and is taken from the suction table to be supplied to the subsequent cutting step. Further, the above-described treatment for lowering the adhesion force means that when the surface protective tape is composed of an energy ray-curable component such as ultraviolet rays, it is an energy ray irradiation treatment, and when the surface protection tape is composed of a thermosetting component. At the time, it is heat treatment.

In the dicing step to the mounting step after the back surface polishing step, a tape for semiconductor processing in which the adhesive film layer and the adhesive layer are laminated in the order of the adhesive layer are used. In general, when such a tape for semiconductor processing is used, first, an adhesive layer of a semiconductor processing tape is bonded to the back surface of the wafer to fix the wafer, and the wafer and the adhesive layer are cut into wafer units using a dicing blade. . Thereafter, an expansion step of expanding the tape in the radial direction of the wafer and pulling apart the wafers is performed. This expansion step is to improve the visibility of the wafer by the CCD camera or the like in the subsequent pickup step, and prevent the adjacent wafers from being connected to each other when picking up the wafer. The person who is exposed to the damaged wafer is implemented. Thereafter, the wafer is picked up from the adhesive layer together with the adhesive layer in the pickup step, and is directly attached to the lead frame or the package substrate or the like in the mounting step. Therefore, by using the tape for semiconductor processing, since the wafer of the adhesive layer can be directly attached to the lead frame or the package substrate or the like, the application step of the adhesive can be omitted or the respective wafers can be subsequently attached. The step of bonding the wafer to the film.

However, in the above-described dicing step, as described above, since the wafer is cut together with the adhesive layer using the dicing blade, not only the chips of the wafer but also the chips of the adhesive layer are generated. Further, when the chips of the adhesive layer are clogged in the wafer dicing groove, the wafers adhere to each other to cause pick-up defects and the like, and the manufacturing of the semiconductor device is lowered.

In order to solve such a problem, a method of cutting only a wafer by a knives in a dicing step and expanding the semiconductor processing tape in the expanding step and separating the adhesive layer into individual wafers has been proposed (for example, Patent Document 1) . According to such a separation method for separating the adhesive layer by the tension at the time of expansion, the chips of the adhesive are not generated, and there is no adverse effect in the pickup step.

Further, in recent years, as a method of cutting a wafer, it has been proposed to use a laser processing apparatus to cut a wafer in a non-contact manner, that is, a so-called stealth cutting method. For example, Patent Document 2 discloses, as a stealth dicing method, a method of dicing a semiconductor substrate, comprising: a semiconductor group in which a thin layer is deposited by attaching an adhesive layer (a die-bonding resin layer) The inside of the panel collects the focus light and illuminates the laser light, and a modified region formed by multiphoton absorption is formed inside the conductor substrate, and the modified region is formed as a step of cutting the predetermined portion; The step of cutting the predetermined portion to cut the semiconductor substrate and the adhesive layer.

Further, as another wafer dicing method using a laser processing apparatus, for example, Patent Document 3 proposes a method of dividing a wafer by attaching an adhesive layer (attachment film) for bonding a wafer to the back surface of the wafer. a step of laminating the stretchable protective adhesive sheet on the side of the wafer adhesive layer to which the adhesive layer has been attached; separating from the surface of the wafer to which the protective adhesive sheet has been attached, illuminating the laser beam along the tangential line a step of forming individual wafers; expanding the protective sheet to impart a tensile force to the adhesive layer, and cutting the adhesive layer into individual wafers; separating the wafer bonded on the cut-off adhesive layer from the protective adhesive sheet The steps.

In the wafer dicing method described in Patent Document 2 and Patent Document 3, since the wafer is cut in a non-contact manner by irradiating the laser light and the expansion tape, the physical load on the wafer is small and does not occur. By performing chipping on the current mainstream knife cutting, the wafer can be cut. Further, since the adhesive layer is separated by expansion, the chips of the adhesive layer are not generated. Therefore, this technology is attracting attention as an excellent technology that can replace knife cutting.

[Previous Technical Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-5530

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2003-338467

[Patent Document 3] Japanese Patent Laid-Open Publication No. 2004-273895

As described in the above Patent Documents 1 to 3, in the method of separating the adhesive layer by expanding the expansion, in order to improve the separation property of the adhesive layer, expansion is performed at a low temperature such as 0 ° C or -15 ° C. The step, and the subsequent picking step and mounting step are the cases where the work is performed at normal temperature. However, when attempting to improve the separation property of the adhesive layer at a low temperature, the separation at room temperature is also increased to cause brittleness. Therefore, when it is subjected to transportation or the like, it becomes easy to be cut or broken, and even if there is no cut or crack, the pull layer is processed to a predetermined size precut step. When stretched, there is a problem that the adhesive layer is simply broken.

Accordingly, an object of the present invention is to provide a tape for semiconductor processing which is not subjected to cutting or cracking during handling, and the like, and in the pre-cutting step of processing the adhesive layer into a predetermined size, even if it is pulled Those who are still not ruptured and have excellent workability.

In order to solve the above problems, the tape for semiconductor processing of the present invention is characterized in that the adhesive layer and the adhesive sheet are laminated, and the adhesive layer is torn according to the right angle test method prescribed in JIS K7128-3. The strength (A) is 0.8 MPa or more.

In the above-described adhesive layer of the above-mentioned semiconductor processing tape, in the above-described right angle test method, the adhesive layer is peeled off from the front end of the straight portion of the test piece by cutting the cut portion having a length of 1 mm from the front end of the right angle portion. The crack strength (B) is preferably 0.5 MPa or more.

Further, the adhesive sheet of the semiconductor processing tape preferably has an elongation of 200% or more.

Further, in the above-mentioned tape for semiconductor processing, it is preferable that the adhesive sheet is stretched to an elongation of 200% and then heated to 120 ° C to be 120% or less.

Further, the above-mentioned adhesive layer of the above-mentioned semiconductor processing tape preferably has a tear strength (C) of 0.8 MPa or less in a right angle test method prescribed by JIS K7128-3 at -15 °C.

Further, in the above-mentioned semiconductor processing tape, the wafer and the adhesive layer bonded to the adhesive layer or the adhesive layer alone are separated into individual wafers by expanding the adhesive sheet The user of the application is preferred.

Moreover, in order to solve the above problems, the semiconductor device of the present invention is characterized in that the above-described semiconductor processing tape is used.

According to the present invention, since the adhesive layer has a tear strength (A) of not less than 0.8 MPa in the test method of the right-angle type test piece shown in JIS K7128-3, it can provide the rinsing after being transported and the like. In the pre-cutting step of processing the adhesive layer to a predetermined size, the tape for semiconductor processing which is excellent in workability which does not break even if it is pulled up is not produced.

10‧‧‧Semiconductor processing tape

11‧‧‧Base film

12‧‧‧Adhesive layer

13‧‧‧ adhesive layer

14‧‧‧Surface protection tape

15‧‧‧Adhesive film

20‧‧‧ ring frame

21 ‧ ‧ steps

22‧‧‧ Push-up components

25‧‧‧heating table

26‧‧‧Attraction table

27‧‧‧Energy line source

28‧‧‧heat shrinkage area

29‧‧‧Warm air nozzle

32‧‧‧Modified area

34‧‧‧ wafer

100‧‧‧ test piece

110‧‧‧ test piece

115‧‧‧cutting section

A‧‧‧right corner

W‧‧‧ wafer

Fig. 1 is a cross-sectional view schematically showing the structure of a tape for semiconductor processing according to an embodiment of the present invention.

[Fig. 2] A cross-sectional view showing a state in which a surface protective tape is attached to a wafer.

Fig. 3 is a cross-sectional view showing a step of laminating a wafer and an annular frame on a tape for semiconductor processing according to an embodiment of the present invention.

Fig. 4 is a cross-sectional view showing the step of peeling off the surface protective tape from the surface of the wafer.

FIG. 5 is a cross-sectional view showing a state in which a modified region is formed on a wafer by laser processing.

[ Fig. 6] (a) is a cross-sectional view showing a state in which a tape for semiconductor processing according to an embodiment of the present invention is mounted on an extension device. (b) A cross-sectional view showing a process of separating a wafer by expanding a semiconductor processing tape. (c) A cross-sectional view showing the expanded semiconductor processing tape, the adhesive layer, and the wafer.

Fig. 7 is a cross-sectional view for explaining a heat shrinking step.

[Fig. 8] (a) is a plan view of a test piece using a right angle test method, and (b) a plan view of a test piece cut into a cut portion.

Hereinafter, embodiments of the present invention will be described in detail.

Fig. 1 is a cross-sectional view showing a tape 10 for semiconductor processing according to an embodiment of the present invention. When the semiconductor processing tape 10 of the present invention separates the wafer into wafers by expansion, the adhesive layer 13 is separated along the wafer. The semiconductor processing tape 10 has an adhesive sheet 15 composed of a base film 11 and an adhesive layer 12 provided on the base film 11, and an adhesive layer 13 provided on the adhesive layer 12, and an adhesive The back side of the wafer is bonded to layer 13. Furthermore, the individual layers may be pre-cut (pre-cut) into a prescribed shape in accordance with the use of the steps or devices. Moreover, the semiconductor processing tape 10 of the present invention may be in the form of being cut into individual wafers, or may be formed by rolling a plurality of thin sheets formed by cutting each of the wafers into rolls. form. Hereinafter, the configuration of each layer will be described.

<Substrate film>

When the base film 11 has uniform and isotropic expandability, it is preferable that the wafer can be cut in all directions without offset in the expanding step, and the material thereof is not particularly limited. In general, the crosslinked resin has a large restoring force for stretching as compared with the non-crosslinked resin, and has a large shrinkage stress when heat is applied to the stretched state after the expanding step. Therefore, after the expansion step, the slack generated by the tape is removed by heat shrinkage, and the tape is stretched to stably maintain the interval of the individual wafers. different. Among the crosslinked resins, a thermoplastic crosslinked resin is preferably used. On the other hand, the non-crosslinked resin has a small restoring force for stretching as compared with the crosslinked resin. Therefore, after the expansion step in a low temperature region such as -15 ° C to 0 ° C, since the tape is again relaxed and returned to normal temperature, the tape which is sent to the pickup step and the mounting step is not easily shrunk, so that adhesion to the wafer can be prevented. The layers of the agent layer are excellent in contact with each other. Among the non-crosslinked resins, an olefin-based non-crosslinked resin is preferably used.

As such a thermoplastic crosslinked resin, for example, an ethylene-(meth)acrylic acid 2-ary copolymer or an ethylene-(meth)acrylic acid-alkyl (meth)acrylate as a main polymer can be exemplified by a metal ion. An ionic polymer resin obtained by crosslinking a ternary copolymer of a constituent component. These are suitable for the expansion step on the surface of uniform expansion, and are particularly suitable on the surface which generates a strong restoring force upon heating by crosslinking. The metal ion contained in the ionic polymer resin is not particularly limited, and examples thereof include zinc and sodium, and the elution property of zinc ions is low, so that it is preferably on a surface having low contamination. Among the alkyl (meth)acrylates of the above-mentioned ternary copolymer, it is preferred that the alkyl group having a carbon number of 1 to 4 has a high modulus of elasticity and can propagate a strong force to the wafer. Examples of such (meth)acrylic acid alkyl esters include methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, methyl acrylate, ethyl acrylate, and acrylic acid acrylate. Ester, butyl acrylate, and the like.

Further, as the thermoplastic crosslinked resin, in addition to the above ionic polymer resin, a low density polyethylene having a specific gravity of 0.910 or more and less than 0.930, or an ultra low density polyethylene having a specific gravity of less than 0.910, and the like A resin selected from the group consisting of ethylene-vinyl acetate copolymers illuminates an energy line such as an electron beam to make a crosslinker suitable. Since such a thermoplastic crosslinked resin has a crosslinked portion and a non-crosslinked portion in the resin, it has a uniform uniform expansion property. Further, since a strong restoring force is exerted during heating, it is also suitable for removing the tape slack generated by the expansion step, and since the molecular chain is composed of almost no chlorine, even if the burning is not required after use, It also does not produce chlorinated aromatic hydrocarbons of dioxin or its analogues, so the environmental load is also small. By appropriately adjusting the amount of the energy ray irradiated to the polyethylene or the ethylene-vinyl acetate copolymer, a resin having a sufficiently uniform expansion property can be obtained.

Further, as the non-crosslinking resin, a mixed resin composition such as a polypropylene and a styrene-butadiene copolymer can be exemplified.

As the polypropylene, for example, a homopolymer of propylene or a block type or a random type propylene-ethylene copolymer can be used. The random propylene-ethylene copolymer is preferred because of its low rigidity. When the content of the ethylene constituent unit in the propylene-ethylene copolymer is 0.1% by weight or more, the rigidity of the tape and the resin in the mixed resin composition are excellent in compatibility with each other. When the rigidity of the tape is appropriate, the cutting property of the wafer is improved, and when the resins are compatible with each other, the amount of extrusion and discharge is easily stabilized. It is preferably 1% by weight or more. In addition, when the content of the ethylene constituent unit in the propylene-ethylene copolymer is 7% by weight or less, it is excellent in the surface where the polypropylene is stable and easily polymerized. It is preferably 5% by weight or less.

The styrene-butadiene copolymer can also be used in the hydrogenation. When the styrene-butadiene copolymer is hydrogenated, it has good compatibility with propylene and It can prevent embrittlement and discoloration caused by oxidative degradation caused by double bonds in butadiene. Further, when the content of the styrene constituent unit in the styrene-butadiene copolymer is 5% by weight or more, it is preferable that the styrene-butadiene copolymer is stable and easily polymerized. Moreover, when it is 40% by weight or less, it is excellent in flexibility on the surface of expandability. It is preferably 25% by weight or less, more preferably 15% by weight or less. As the styrene-butadiene copolymer, any of a block type copolymer or a random type copolymer can be used. The random copolymer is preferable because the styrene phase is uniformly dispersed and the rigidity is suppressed from being excessively increased to improve the expandability.

When the content of the polypropylene in the mixed resin composition is 30% by weight or more, it is excellent in the surface which can suppress the thickness unevenness of the base film. When the thickness is uniform, the expandability is easily equalized, and the stress relaxation property of the base film is prevented from becoming excessively large, and the distance between wafers is reduced with time, and the adhesive layers are brought into contact with each other to be remelted. It is preferably 50% by weight or more. Further, when the content of the polypropylene is 90% by weight or less, the rigidity of the base film can be easily adjusted. When the rigidity of the base film is too large, the force required to expand the base film is also increased, and the load on the apparatus is increased, and the wafer or the adhesive layer cannot be sufficiently expanded, so that it is appropriately performed. Adjustment is extremely important. The lower limit of the content ratio of the styrene-butadiene copolymer in the mixed resin composition is preferably 10% by weight or more, and it is easy to adjust the rigidity of the substrate film suitable for the apparatus. When the upper limit is 70% by weight or less, it is excellent in a surface capable of suppressing thickness unevenness, and is preferably 50% by weight or less.

Further, in the example shown in FIG. 1, the base film 11 is a single layer, but is not limited thereto, and may be formed by laminating two or more kinds of resins. The number of layers may be two or more layers of one type of resin. If two or more kinds of resins are cross-linked or non-crosslinkable, it is better to find that the respective characteristics are more enhanced. When the combination of cross-linking and non-crosslinking is carried out, The disadvantages of each other are better on the complementary side. The thickness of the base film 11 is not particularly limited as long as it is sufficient for the expansion step of the semiconductor processing tape 10 to be easily pulled up without breaking. For example, it is preferably 50 to 300 μm, and preferably 80 μm to 200 μm.

As a method of producing the base film 11 of the plurality of layers, a conventionally known extrusion method, lamination method, or the like can be used. When lamination is used, an adhesive may also be interposed between the layers. The subsequent agent can use a conventionally known adhesive.

<Adhesive layer>

The adhesive layer 12 can be formed by applying an adhesive composition to the base film 11. The adhesive layer 12 constituting the tape 10 for semiconductor processing of the present invention has a degree of retention which does not cause peeling of the adhesive layer 13 or wafer flying out during dicing, or is easy to follow at the time of picking up. The characteristics of the peeling of the agent layer 13 may be sufficient.

In the adhesive tape 10 for semiconductor processing of the present invention, the composition of the adhesive composition constituting the adhesive layer 12 is not particularly limited, and in order to improve the pick-up property after cutting, it is preferable to use an energy ray hardening property, and to harden the adhesive and the adhesive. A material in which the peeling of the layer 13 becomes easy is preferable. In the adhesive composition, as the matrix resin, a (meth) acrylate having an alkyl chain having 6 to 12 carbon atoms and containing 60 mol% or more, and having an iodine value of 5, may be exemplified. ~30 energy line hardening carbon-carbon double bond polymer (A). Furthermore, the energy line here refers to ionizing radiation such as ultraviolet light or electron lines.

In the polymer (A), when the amount of introduction of the energy ray-curable carbon-carbon double bond is 5 or more, the effect of reducing the adhesion after the energy ray irradiation is excellent. It is preferably 10 or more. Further, when the iodine value is 30 or less, the wafer holding power until the pickup after the irradiation of the energy ray is high, and it is excellent in the surface which easily enlarges the gap of the wafer at the time of the current expansion of the pickup step. If the gap between the wafers can be sufficiently enlarged before the pickup step, it is preferable to recognize the image of each wafer at the time of picking up, or to make it easy to pick up. Further, when the amount of introduction of the carbon-carbon double bond is 5 or more and 30 or less, the polymer (A) itself is stable and easy to manufacture, which is preferable.

Further, when the glass transition temperature of the polymer (A) is at least -70 ° C, it is excellent in heat resistance on the heat accompanying the energy ray irradiation, and is preferably -66 ° C or higher. Moreover, when it is 15 ° C or less, it is excellent in the surface which has the effect of preventing the wafer from scattering after dicing in the surface of the rough state, and is preferably 0 ° C or less, more preferably -28 ° C or less.

The above polymer (A) may be produced by any method, for example, using a mixture of a mixed acrylic copolymer and an energy ray-curable carbon-carbon double bond, or an acrylic having a functional group. a copolymer or a methacrylic copolymer (A1) having a functional group, which is reacted with a compound (A2) having a functional group capable of reacting with the functional group and having an energy ray-curable carbon-carbon double bond .

Among them, as the above-mentioned methacrylic acid having a functional group The copolymer (A1) is exemplified by a monomer (A1-1) having a carbon-carbon double bond such as an alkyl acrylate or an alkyl methacrylate, and having a carbon-carbon double bond and having a functional group. The monomer (A1-2) is obtained by copolymerization. The monomer (A1-1) may, for example, be hexyl acrylate having an alkyl chain having 6 to 12 carbon atoms, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate or acrylic acid. Dodecyl ester, decyl acrylate, lauryl acrylate, or a monomer having an alkyl chain of 5 or less, ie, pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate An ester, a methyl acrylate, or the like methacrylate or the like.

Further, in the monomer (A1-1), since the component having 6 or more carbon atoms in the alkyl chain can reduce the peeling force of the adhesive layer and the adhesive layer, it is excellent in the surface on the pick-up property. Further, the component of 12 or less is excellent in the modulus of elasticity at room temperature, and the surface of the adhesive layer and the adhesive layer is excellent in adhesion. When the adhesive force between the adhesive layer and the adhesive layer is high, it is preferable to reduce the interfacial deviation between the adhesive layer and the adhesive layer while cutting the wafer by expanding the tape.

Further, as the monomer (A1-1), if a monomer having a larger carbon number of the alkyl chain is used, the glass transition temperature becomes lower, so that it is possible to prepare a desired glass transition temperature by an appropriate selection. Adhesive composition. In addition to the glass transition temperature, it is also possible to blend a low molecular compound having a carbon-carbon double bond such as vinyl acetate, styrene or acrylonitrile for the purpose of improving various properties such as compatibility. In this case, these low molecular weight compounds are formulated so as to be in the range of 5% by mass or less based on the total mass of the monomer (A1-1).

On the other hand, the functional group of the monomer (A1-2) may, for example, be a carboxyl group, a hydroxyl group, an amine group, a cyclic acid anhydride group, an epoxy group or an isocyanate group, as a monomer (A1-2). Specific examples thereof include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, citric acid, 2-hydroxyalkyl acrylate, 2-hydroxyalkyl methacrylate, and diol. Monoacrylates, diol monomethacrylates, N-methylol acrylamide, N-methylol methacrylamide, allyl alcohol, N-alkylaminoethyl acrylate , N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, anhydrous maleic acid, anhydrous itaconic acid, anhydrous fumaric acid, anhydrous citric acid, epoxy propyl Acrylate, epoxypropyl methacrylate, allyl epoxypropyl ether, and the like.

Further, in the compound (A2), when the functional group of the compound (A1) is a carboxyl group or a cyclic acid anhydride group, the functional group which can be used is, for example, a hydroxyl group, an epoxy group or an isocyanate group. In the case of a hydroxyl group, for example, a cyclic acid anhydride group or an isocyanate group may be mentioned, and when it is an amine group, an epoxy group or an isocyanate group may, for example, and when it is an epoxy group, a carboxyl group or a cyclic acid anhydride may be mentioned. The base, the amine group, etc., as a specific example, the same as exemplified in the specific example of the monomer (A1-2). Further, as the compound (A2), one of the isocyanate groups of the polyisocyanate compound may be subjected to urethane by a monomer having a hydroxyl group, a carboxyl group and an energy ray-curable carbon-carbon double bond.

Further, in the reaction between the compound (A1) and the compound (A2), by leaving the unreacted functional group, it is possible to produce a desired property with respect to properties such as an acid value or a hydroxyl value. If the OH group remains as a polymer (A) The valence of the hydroxyl group is 5 to 100, and the risk of picking up errors can be further reduced by reducing the adhesion after the energy ray is irradiated. In addition, when the acid value of the polymer (A) remaining in the COOH is from 0.5 to 30, the effect of improving the adhesion of the adhesive layer after expanding the tape for semiconductor processing of the present invention can be obtained. When the hydroxyl value of the polymer (A) is 5 or more, it is excellent on the surface of the effect of reducing the adhesion after the energy ray irradiation, and if it is 100 or less, the fluidity of the adhesive after the energy ray irradiation is on the surface. Excellent. In addition, when the acid value is 0.5 or more, it is excellent on the surface of the tape restorability, and when it is 30 or less, it is excellent in the fluidity of the adhesive.

In the synthesis of the polymer (A), as the organic solvent when the reaction system is carried out under solution polymerization, a ketone system, an ester system, an alcohol system or an aromatic group may be used, but in the case of toluene, ethyl acetate or the like, Propyl alcohol, benzyl acesulfame, ethyl cyproterone, acetone, methyl ethyl ketone, etc. are generally good solvents for acrylic polymers and solvents with a boiling point of 60-120 ° C are preferred, as well as polymerization. The initiator is usually a radical generator such as an azobis system such as α,α'-azobisisobutyronitrile or an organic peroxide such as benzamidine peroxide. In this case, if necessary, a catalyst or a polymerization inhibiting agent can be used in combination, and by adjusting the polymerization temperature and the polymerization time, the polymer (A) having a desired molecular weight can be obtained. Further, in order to adjust the molecular weight, it is preferred to use a solvent such as a mercaptan or a carbon tetrachloride. Further, the reaction is not limited to solution polymerization, and may be other methods such as bulk polymerization or suspension polymerization.

By the above, the polymer (A) can be obtained, and in the present invention, when the molecular weight of the polymer (A) is 300,000 or more, it is excellent in the surface which improves the cohesive force. If the cohesion is high, then when expanding It is preferable to suppress the effect of shifting at the interface with the adhesive layer, and it is easy to propagate the tensile force to the adhesive layer, and the surface of the adhesive layer is preferably improved. When the molecular weight of the polymer (A) is 2,000,000 or less, it is excellent in the surface which suppresses gelation at the time of a synthesis and a coating. Further, the molecular weight of the present invention means a mass average molecular weight in terms of polystyrene.

Further, in the tape 10 for semiconductor processing of the present invention, the resin composition constituting the adhesive layer 12 may further have a compound (B) which acts as a crosslinking agent in addition to the polymer (A). For example, polyisocyanate, melamine, formaldehyde resin, and epoxy resin can be used, and these can be used individually or in combination of 2 or more types. This compound (B) is reacted with the polymer (A) or the substrate film, and as a result of the crosslinked structure, the polymer (A) and (B) can be promoted after the application of the adhesive composition. The cohesive force of the adhesive of the ingredients.

The polyisocyanate is not particularly limited, and examples thereof include 4,4'-diphenylmethane diisocyanate, methylphenyl diisocyanate, decyl diisocyanate, and 4,4'-diphenyl ether. Aromatic isocyanate such as isocyanate or 4,4'-[2,2-bis(4-phenoxyphenyl)propane]diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-six Methylene diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate, lysine diisocyanate, lysine triisocyanate, etc. Specifically, for example, Coronate L (manufactured by Nippon Polyamide Co., Ltd., trade name) or the like can be used. As a melamine ‧ formaldehyde resin, specifically, for example, Nikalac MX-45 (manufactured by Sanwa Chemical Co., Ltd., trade name), Melan (manufactured by Hitachi Chemical Co., Ltd., trade name). As the epoxy resin, for example, TETRAD-X (manufactured by Mitsubishi Chemical Corporation, trade name) or the like can be used. In the present invention, it is particularly preferred to use a polyisocyanate.

The adhesive layer in which the amount of the compound (B) is 0.1 parts by mass or more is excellent in the cohesive force with respect to 100 parts by mass of the polymer (A). It is preferably 0.5 parts by mass or more. In addition, the adhesive layer having a thickness of 10 parts by mass or less is excellent in the surface which suppresses the sharp gelation at the time of application, and the workability of the adhesive agent, coating, etc. is favorable. More preferably, it is 5 mass parts or less.

Further, in the present invention, the adhesive layer 12 may further contain a photopolymerization initiator (C). The photopolymerization initiator (C) contained in the adhesive layer 12 is not particularly limited, and those known in the past can be used. For example, benzophenone, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4,4'-dichlorobiphenyl An acetophenone such as a ketone or the like, an acetophenone such as acetophenone or diethoxyacetophenone, an anthraquinone such as 2-ethylhydrazine or t-butylhydrazine, or a 2-chlorothiazide. Tonsone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triarylimidazole dimer (octyl dimer), acridine compound, etc., which can be used alone or Two or more types are used in combination. The amount of the photopolymerization initiator (C) to be added is preferably 0.1 part by mass or more, and preferably 0.5 part by mass or more based on 100 parts by mass of the polymer (A). Further, the upper limit is preferably 10 parts by mass or less, and 5 parts by mass or less.

Moreover, the energy ray hardenable adhesive used in the present invention In the meantime, it is possible to mix an adhesion-imparting agent, an adhesive preparation agent, a surfactant, or the like, or other modifiers. Further, an inorganic compound filler may be suitably added.

The adhesive layer 12 can be formed by a method of forming a past adhesive layer. For example, a method of applying the above-described adhesive composition onto a predetermined surface of the base film 11 or applying the above-described adhesive composition to a separator (for example, a plastic coated with a release agent) After the adhesive layer 12 is formed on a film or a sheet, the adhesive layer 12 can be formed on the base film 11 by transferring the adhesive layer 12 onto a predetermined surface of the substrate. Further, the adhesive layer 12 may have a single layer form or a laminated form.

The thickness of the adhesive layer 12 is not particularly limited, and if the thickness is 2 μm or more, it is excellent on the surface of the adhesive force, and preferably 5 μm or more. When it is 15 μm or less, the pickup property is excellent, and preferably 10 μm or less.

The elongation of the adhesive sheet 15 is preferably 200% or more. Further, after extending to an elongation of 200%, the elongation is preferably 120% or less by heating to 120 °C. When the elongation is 120% or less when heated to 120° C., the adhesive layer 12 is separated along the wafer by expansion, and the outer peripheral portion of the wafer for the semiconductor processing tape which is elongated by heating is shrunk by heating. In the step, it can make it shrink. As a result, the wafer interval can be maintained, and cracking or the like caused by collision of the wafers with each other can be prevented. In order to produce an elongation of 200% or more and extend to an elongation of 200%, the elongation is 120% or less by heating to 120 ° C. It is preferred to use the substrate film 11 having such characteristics.

<Binder layer>

In the semiconductor processing tape 10 of the present invention, the adhesive layer 13 is bonded to the wafer, and after being diced, the wafer is peeled off from the adhesive layer 12 and attached to the wafer. Also, an adhesive when the wafer is fixed on a substrate or a lead frame is used.

The adhesive layer 13 is not particularly limited as long as it is generally used as a film-like adhesive on a wafer, and examples thereof include a thermoplastic resin and a thermally polymerizable component. The above-mentioned thermoplastic resin used in the adhesive layer 13 of the present invention is preferably a thermoplastic resin or a thermoplastic in an uncured state, and is preferably formed into a crosslinked structural aliphatic resin after heating, and is particularly limited as one of them. The thermoplastic resin such as a weight average molecular weight of 5,000 to 200,000 and a glass transition temperature of 0 to 150 ° C can be mentioned. Further, as another aspect, a thermoplastic resin such as a weight average molecular weight of 100,000 to 1,000,000 and a glass transition temperature of -50 to 20 ° C may be mentioned.

The thermoplastic resin as the former may, for example, be a polyimide resin, a polyamide resin, a polyether quinone resin, a polyamide amide resin, a polyester resin, a polyester phthalimide resin, or a phenoxy group. Base resin, polyfluorene resin, polyether oxime resin, polyphenylene sulfide resin, polyether ketone resin, etc., among which polypyrmine resin and phenoxy resin are preferably used, and the latter is used as a thermoplastic resin. A polymer containing a functional group is preferred.

Polyimine resin can be used to make tetracarboxylic acid II by a known method. The anhydride is obtained by a condensation reaction with a diamine. That is, in the organic solvent, an equimolar or almost equimolar tetracarboxylic dianhydride and a diamine (the order of addition of each component is arbitrary) is used, and the reaction temperature is 80 ° C or lower, preferably 0 to 60 ° C. The addition reaction is carried out. As the reaction progresses, the viscosity of the reaction liquid gradually rises, and the precursor of the polyimine is polyamine. The molecular weight can also be adjusted by heating the polyamic acid at a temperature of 50 to 80 ° C to depolymerize it. The polyimine resin is obtained by subjecting the above reactant (polyglycine) to dehydration ring closure. The dehydration closed loop system can be carried out in a thermal closed loop process using heat treatment and a chemical ring closure method using a dehydrating agent.

The tetracarboxylic dianhydride used as a raw material of the polyimide resin is not particularly limited, and, for example, 1,2-(ethylene) bis(trimellitic anhydride anhydrate), 1,3-(trimethylene) can be used. Bis(p-trimelliate anhydrate), 1,4-(tetramethylene)bis (p-trimelliate anhydrate), 1,5-(pentamethylene) bis(trimellitic acid) Ester anhydrate), 1,6-(hexamethylene)bis(p-trimelliate anhydrate), 1,7-(heptamethylene)bis (p-trimelliate anhydrate), 1,8 - (octamethylene) bis (p-trimelliate anhydrate), 1,9-(nonamethylene) bis (p-trimelliate anhydrate), 1,10-(decamethylene) double (p-trimelliate anhydrate), 1,12-(dodecyl)bis (p-trimelliate anhydrate), 1,16-(hexamethylene) bis(trimelliticate) Anhydrous), 1,18-(octadecyl)bis (p-trimelliate anhydrate), pyromellitic dianhydride, 3,3', 4,4'-biphenyltetracarboxylic acid Anhydride, 2,2', 3,3'-biphenyltetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2,2-bis(2,3- Dicarboxyphenyl)propane dianhydride, 1,1-bis(2,3-dicarboxyphenyl) Ethane dianhydride, 1,1-bis(3,4-dicarboxyphenyl)ethane dianhydride, bis(2,3-dicarboxyphenyl)methane dianhydride, bis(3,4-dicarboxyphenyl) Methane dianhydride, bis(3,4-dicarboxyphenyl)ruthenic anhydride, 3,4,9,10-decanetetracarboxylic dianhydride, bis(3,4-dicarboxyphenyl)ether dianhydride, Benzene-1,2,3,4-tetracarboxylic dianhydride, 3,4,3',4'-benzophenonetetracarboxylic dianhydride, 2,3,2',3'-benzophenone Tetracarboxylic dianhydride, 3,3,3',4'-benzophenone tetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalene Tetracarboxylic dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 1,2,4,5-naphthalenetetracarboxylic dianhydride, 2,6-dichloronaphthalene-1,4,5, 8-tetracarboxylic dianhydride, 2,7-dichloro-1,4,5,8-tetracarboxylic dianhydride, 2,3,6,7-tetrachloronaphthalene-1,4,5,8- Tetracarboxylic dianhydride, phenanthrene-1,8,9,10-tetracarboxylic dianhydride, pyrazine-2,3,5,6-tetracarboxylic dianhydride, thiophene-2,3,5,6-tetra Carboxylic dianhydride, 2,3,3',4'-biphenyltetracarboxylic dianhydride, 3,4,3',4'-biphenyltetracarboxylic dianhydride, 2,3,2', 3'-biphenyltetracarboxylic dianhydride, bis(3,4-dicarboxyphenyl)dimethyl phthalane dianhydride, bis(3,4-dicarboxyphenyl)methylphenyl decane dianhydride, double (3,4-dicarboxyphenyl)diphenylnonane Anhydride, 1,4-bis(3,4-dicarboxyphenyldimethylmercapto)phthalic anhydride, 1,3-bis(3,4-dicarboxyphenyl)-1,1,3,3- Tetramethyldicyclohexane dianhydride, p-phenylene bis(p-benzoate anhydrate), ethylene tetracarboxylic dianhydride, 1,2,3,4-butane tetracarboxylic dianhydride, ten Hydronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetra Carboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrrolidine-2,3,4,5-tetracarboxylic dianhydride, 1,2,3,4-cyclobutane Alkanetetracarboxylic dianhydride, bis(exo-bicyclo[2,2,1]heptane-2,3-dicarboxylic dianhydride, bicyclo-[2,2,2]-oct-7-ene-2, 3,5,6-tetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride, 2,2-bis[4-(3,4-dicarboxyphenyl) Phenyl] Fluoropropane dianhydride, 4,4'-bis(3,4-dicarboxyphenoxy)diphenyl sulfide dianhydride, 1,4-bis(2-hydroxyhexafluoroisopropyl)benzene bis(phenylene) Triic anhydride), 1,3-bis(2-hydroxyhexafluoroisopropyl)benzene bis(trimellitic anhydride), 5-(2,5-dioxotetrahydrofuranyl)-3-methyl-3-ring Hexene-1,2-dicarboxylic dianhydride, tetrahydrofuran-2,3,4,5-tetracarboxylic dianhydride, etc., may be used alone or in combination of two or more.

Further, the diamine used as a raw material of the polyimine is not particularly limited, and for example, o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3 can be used. '-Diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenylmethane, 3 , 4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl ether methane, bis(4-amino-3,5-dimethylphenyl)methane, bis(4-amine 3-,5-diisopropylphenyl)methane, 3,3'-diaminodiphenyldifluoromethane, 3,4'-diaminodiphenyldifluoromethane, 4,4'- Diaminodiphenyldifluoromethane, 3,3'-diaminodiphenylanthracene, 3,4'-diaminodiphenylanthracene, 4,4'-diaminodiphenylanthracene, 3 , 3'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 3,3'-diaminodi Phenyl ketone, 3,4'-diaminodiphenyl ketone, 4,4'-diaminodiphenyl ketone, 2,2-bis(3-aminophenyl)propane, 2,2'- (3,4'-Diaminodiphenyl)propane, 2,2-bis(4-aminophenyl)propane, 2,2-bis(3-aminophenyl)hexafluoropropane, 2,2 -(3,4'- Diaminodiphenyl)hexafluoropropane, 2,2-bis(4-aminophenyl)hexafluoropropane, 1,3-bis(3-aminophenoxy)benzene, 1,4-double ( 3-aminophenoxy)benzene, 1,4-bis(4-aminophenoxy)benzene, 3,3'-(1,4-phenylphenylbis(1-methylethylidene)) Diphenylamine, 3,4'-(1,4-phenylene bis(1-methyl amide) Ethyl))diphenylamine, 4,4'-(1,4-phenylenebis(1-methylethylidene))diphenylamine, 2,2-bis(4-(3-aminophenoxy) Phenyl)propane, 2,2-bis(4-(4-aminophenoxy)phenyl)propane, 2,2-bis(4-(3-aminophenoxy)phenyl)hexafluoro Propane, 2,2-bis(4-(4-aminophenoxy)phenyl)hexafluoropropane, bis(4-(3-aminophenoxy)phenyl) sulfide, bis(4-( 4-aminophenoxy)phenyl) sulfide, bis(4-(3-aminophenoxy)phenyl)anthracene, bis(4-(4-aminophenoxy)phenyl)anthracene, An aromatic diamine such as 3,5-diaminobenzoic acid, 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-di Aminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminodecane, 1,10-di Amino decane, 1,11-diaminoundecane, 1,12-diaminododecane, 1,2-diaminocyclohexane, diamine represented by the following general formula (1) Polyoxyalkylene, 1,3-bis(aminomethyl)cyclohexane, Jeffamine D-230, D-400, D-2000, D-4000, ED-600, ED- by Sunechno Chemical Co., Ltd. 900, ED-2001, EDR-148, etc. Polyoxyalkylene diamine, etc. For the amine or the like, one type of these may be used or two or more types may be used in combination. The glass transition temperature of the above polyimine resin is preferably from 0 to 200 ° C, and the weight average molecular weight is preferably from 10,000 to 200,000.

(wherein R ₁ and R ₂ represent a divalent hydrocarbon group having 1 to 30 carbon atoms, each of which may be the same or different, and R ₃ and R _{4 each} represent a monovalent hydrocarbon group, each of which may be the same or different , m is an integer greater than 1)

The phenoxy resin of one of the other preferred thermoplastic resins described above is known by a method of reacting various bisphenols with epichlorohydrin or by reacting a liquid epoxy resin with bisphenol. Preferably, examples of the bisphenol include bisphenol A, bisphenol bisphenol AF, bisphenol AD, bisphenol F, and bisphenol S. Since the phenoxy resin is similar in structure to the epoxy resin, it has good compatibility with the epoxy resin, and it is suitable to impart good adhesion to the adhesive film.

The phenoxy resin used in the present invention may, for example, be a resin having a repeating unit represented by the following general formula (2).

In the above general formula (2), X represents a single bond or a divalent linking group. Examples of the divalent linking group include an alkyl group, a phenyl group, -O-, -S-, -SO- or -SO ₂ -. Here, the alkylene group is preferably an alkylene group having 1 to 10 carbon atoms, and more preferably -C(R1)(R2)-. R1 and R2 represent a hydrogen atom or an alkyl group, and the alkyl group is preferably a linear or branched alkyl group having 1 to 8 carbon atoms, and examples thereof include a methyl group, an ethyl group, an n-propyl group and an isopropyl group. Base, isooctyl, 2-ethylhexyl, 1,3,3-trimethylbutyl and the like. Further, the alkyl group may be substituted by a halogen atom, and examples thereof include a trifluoromethyl group. X is preferably an alkyl group, -O-, -S-, fluorenyl or -SO ₂ -, and an alkyl group or -SO ₂ - is preferred. Among them, -C(CH ₃ ) ₂ -, -CH(CH ₃ )-, -CH ₂ -, -SO ₂ - is preferred, and -C(CH ₃ ) ₂ -, -CH(CH ₃ )-, -CH ₂ - is preferred, and -C(CH ₃ ) ₂ - is particularly preferred.

The phenoxy resin represented by the above general formula (2) may be a resin having a plurality of repeating units in which X of the above general formula (2) is different, as long as X is the same repeating unit. The constituents. In the present invention, a resin composed only of X and the same repeating unit is preferred.

In addition, when the phenoxy resin represented by the above formula (2) contains a polar substituent such as a hydroxyl group or a carboxyl group, the compatibility with the thermopolymerizable component is improved, and a uniform appearance or characteristics can be imparted.

When the mass average molecular weight of the phenoxy resin is 5,000 or more, it is excellent in the film formability. It is preferably 10,000 or more, more preferably 30,000 or more. Further, when the mass average molecular weight is 150,000 or less, it is preferred that the fluidity at the time of heating and pressing or the compatibility with other resins is good. It is preferably 100,000 or less. Further, when the glass transition temperature is -50 ° C or more, it is excellent in film formability, and is preferably 0 ° C or higher, more preferably 50 ° C or higher. When the glass transition temperature is 150 ° C, the adhesion of the adhesive layer 13 at the time of wafer bonding is excellent, and is preferably 120 ° C or lower, more preferably 110 ° C or lower.

On the other hand, examples of the functional group in the polymer containing a functional group include a glycidyl group, an acryloyl group, a methacryl group, a hydroxyl group, a carboxyl group, an isomeric cyanate group, and an amine. The base, the guanamine group and the like, and the epoxy propyl group is also preferred.

The high molecular weight component containing the functional group may, for example, be a functional group containing a glycidyl group, a hydroxyl group or a carboxyl group. Base) acrylic copolymer and the like.

As the (meth)acrylic copolymer, for example, a (meth) acrylate copolymer, an acryl rubber or the like can be used, and an acryl rubber is preferred. The acrylic rubber has an acrylate as a main component, and is mainly a rubber composed of a copolymer of butyl acrylate and acrylonitrile, or a copolymer of acrylate or acrylonitrile.

When the epoxy propyl group is used as the functional group, the amount of the repeating unit containing the epoxy propyl group is preferably 0.5 to 6.0% by weight, preferably 0.5 to 5.0% by weight, more preferably 0.8 to 5.0% by weight. . The repeating unit containing a glycidyl group means a constituent monomer of a (meth)acrylic acid copolymer containing a glycidyl group, specifically, an epoxypropyl acrylate or a propylene methacrylate. If the amount of the repeating unit containing the epoxy propyl group is in the range, not only the adhesion but also the gelation can be prevented.

Examples of the constituent monomer of the above (meth)acrylic copolymer other than the epoxy propyl acrylate and the epoxidized methacrylic acid ester include ethyl (meth) acrylate and butyl (methyl). ) Acrylate or the like, these may be used singly or in combination of two or more types. Further, in the present invention, the ethyl (meth) acrylate means ethyl acrylate and/or ethyl methacrylate. The mixing ratio in the case where the functional monomer is used in combination is determined after considering the glass transition temperature of the (meth)acrylic copolymer. When the glass transition temperature is made to be -50 ° C or higher, the film formability is excellent, and it is preferable to suppress the excessive viscosity at normal temperature. If the viscous force at normal temperature is excessive, the adhesive layer becomes difficult to handle. It is preferably -20 ° C or higher, more preferably 0 ° C or higher. Also, the glass transition temperature is created by 30 Below °C, it is excellent in the adhesion layer of the adhesive layer at the time of wafer bonding, and is preferably 20 ° C or less.

When the monomer is polymerized to produce a high molecular weight component containing a functional monomer, the polymerization method is not particularly limited, and a method such as bead polymerization or solution polymerization can be used. Among them, bead polymerization is preferred.

In the present invention, when the weight average molecular weight of the high molecular weight component containing a functional monomer is 100,000 or more, it is excellent in film formability, and is preferably 200,000 or more, and more preferably 500,000 or more. Further, when the weight average molecular weight is adjusted to 2,000,000 or less, it is excellent in the surface where the heating fluidity of the adhesive layer is improved at the time of wafer bonding. When the thermal fluidity of the adhesive layer is increased when the wafer is bonded, the adhesion between the adhesive layer and the adherend becomes good, and the adhesion can be improved, and the unevenness of the adherend can be buried to easily suppress the void. It is preferably 1,000,000 or less, more preferably 800,000 or less, and if it is 500,000 or less, a larger effect can be obtained.

In addition, the thermal polymerization component is not particularly limited as long as it is polymerized by heat, and examples thereof include a glycidyl group, an acryloyl group, a methacryl group, a hydroxyl group, a carboxyl group, and an isocyanurate. a compound of a functional group such as a group, an amine group, a guanamine group, or the like, and a triggering material, which may be used alone or in combination of two or more kinds, but when heat resistance as an adhesive layer is considered, It is preferable to contain a thermosetting resin which is cured by heat and which is used together with a curing agent or a promoter. Examples of the thermosetting resin include an epoxy resin, an acrylic resin, a polyoxyn resin, a phenol resin, and a thermosetting polyimide tree. In particular, it is preferable to use an epoxy resin on the surface of the adhesive layer which is excellent in heat resistance, workability, and reliability, such as a grease, a urethane resin, a melamine resin, or a urea resin.

The epoxy resin described above is not particularly limited as long as it is cured, and a difunctional epoxy resin such as a bisphenol A epoxy resin, a phenol novolac epoxy resin or a cresol novolac epoxy resin can be used. A phenolic epoxy resin or the like such as a resin. Further, a general-purpose one of a polyfunctional epoxy resin, a glycidylamine epoxy resin, a heterocyclic epoxy resin, or an alicyclic epoxy resin can be used.

Examples of the bisphenol A type epoxy resin include Epikote series (Epikote 807, Epikote 815, Epikote 825, Epikote 827, Epikote 828, Epikote 834, Epikote 1001, Epikote 1004, Epikote 1007, manufactured by Mitsubishi Chemical Corporation). Epikote 1009), manufactured by The Dow Chemical Company, DER-330, DER-301, DER-361, and Nippon Steel & Sumitomo Chemical Co., Ltd., YD8125, YDF8170, etc. Examples of the phenol novolak type epoxy resin include Epikote 152, Epikote 154 manufactured by Mitsubishi Chemical Corporation, EPPN-20 manufactured by Nippon Kayaku Co., Ltd., and DEN-438 manufactured by Dow Chemical Co., Ltd., and the like. The above-mentioned o-cresol novolac type epoxy resin may, for example, be EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025, EOCN-1027 manufactured by Nippon Kayaku Co., Ltd., and Nippon Steel & Sumitomo Metal Chemical Co., Ltd., YDCN701, YDCN702, YDCN703, YDCN704, etc. The polyfunctional epoxy resin is exemplified by Mitsubishi Chemical Corporation. Epon1031S, Araldite 0163 manufactured by Ciba Specialty Chemicals Co., Ltd., Denacol EX-611, EX-614, EX-614B, EX-622, EX-512, EX-521, EX-421, EX- manufactured by Nagase ChemteX Co., Ltd. 411, EX-321, etc. Examples of the above-mentioned amine-type epoxy resin include Epikote 604 manufactured by Mitsubishi Chemical Corporation, YH-434 manufactured by Tohto Kasei Co., Ltd., TETRAD-X and TETRAD-C manufactured by Mitsubishi Gas Chemical Co., Ltd., Sumitomo ELM-120 manufactured by Chemical Industry Co., Ltd., etc. Examples of the epoxy resin containing a hetero ring include Araldite PT810 manufactured by Ciba Specialty Chemicals Co., Ltd., ERL 4234, ERL4299, ERL4221, and ERL4206 manufactured by UCC Corporation. These epoxy resins can be used singly or in combination of two or more types.

In order to cure the above thermosetting resin, an additive may be appropriately added. Examples of such an additive include a curing agent, a curing accelerator, and a catalyst. When a catalyst is added, a catalyst can be used as necessary.

When an epoxy resin is used as the thermosetting resin, it is preferred to use an epoxy resin curing agent or a curing accelerator, and it is preferred to use them in combination. Examples of the curing agent include a phenol resin, a dicyandiamide, a boron trifluoride compound, an organic phosphonium compound, an amine, a polyamide resin, an imidazole compound, a urea or a thiourea compound, and a polythiol compound. A polythioether resin having a mercapto group at the terminal, an acid anhydride, and a light ultraviolet curing agent. These systems can be used alone or in combination of two or more.

Here, examples of the boron trifluoride-discriminating compound include a boron trifluoride-amine complex compound with various amine compounds (preferably, a first-order amine compound). The organic ruthenium compound may, for example, be guanidinium isophthalate.

Examples of the phenol resin include a phenolic phenol resin such as a phenol novolac resin, a phenol aralkyl resin, a cresol novolac resin, a tert-butylphenol phenol resin, a nonylphenol phenol resin, and a resol type phenol resin. Polyoxystyrene such as polyoxystyrene. Among them, a phenol compound having at least two phenolic hydroxyl groups in the molecule is preferred.

Examples of the phenol-based compound having at least two phenolic hydroxyl groups in the molecule include a phenol novolac resin, a cresol novolak resin, a t-butylphenol novolac resin, a dicyclopentadiene cresol novolac resin, and the like. Cyclopentadiene phenol phenolic resin, decyl phenolic phenolic resin, naphthol phenolic resin, phenolic phenolic resin, phenol phenolic phenolic resin, bisphenol A phenolic resin, poly-p-vinyl phenol resin, phenol aralkyl resin Wait. Among these phenol resins, phenol phenol resin and phenol aralkyl resin are particularly preferable, and connection reliability can be improved.

The amines may, for example, be a chain aliphatic amine (diethylenetriamine, triethylenetetramine, hexamethylenediamine, N,N-dimethylpropylamine, benzyldimethylamine, 2-(Dimethylamino)phenol, 2,4,6-gin (dimethylaminomethyl)phenol, m-nonanediamine, etc.), cyclic aliphatic amine (N-aminoethylpiperine) Pyrazine, bis(3-methyl-4-aminocyclohexyl)methane, bis(4-aminocyclohexyl)methane, menthene diamine, isophorone diamine, 1,3-bis (amino group) Base) cyclohexane, etc.), heterocyclic amines (piperazine, N,N-dimethylpiperazine, triethylenediamine, melamine, decylamine, etc.), aromatic amines (m-phenylenediamine, 4, 4'-diaminodiphenylmethane, diamine, 4,4'-diaminodiphenylphosphonium, etc.), polyamidamine resin (preferably polyamidoamine, dimer acid and polyamine) Condensate), imidazole compound (2-phenyl-4,5-dihydroxymethylimidazole, 2-methylimidazole, 2,4-dimethylimidazole, 2-n-pentadecylimidazole, 1-cyano Base ethyl-2-undecylimidazole ‧ trimellitate, epoxy ‧ imidazole adduct, etc., urea or thiourea compound (N, N-dialkyl urea compound, N, N-dioxane a thiourea compound, etc., a polythiol compound, a polythioether resin having a mercapto group at the terminal, an acid anhydride (tetrahydroanhydrous citric acid, etc.), a light ‧ ultraviolet hardener (diphenylphosphonium hexafluorophosphate, triphenyl Hexafluorophosphate, etc.).

The hardening accelerator is not particularly limited as long as it cures the thermosetting resin, and examples thereof include an imidazole, a dicyandiamide derivative, a dicarboxylic acid diterpene, a triphenylphosphine, and a tetraphenyl group.鏻tetraphenyl borate, 2-ethyl-4-methylimidazolium-tetraphenylborate, 1,8-dioxinbicyclo[5.4.0]undecene-7-tetraphenylborate Wait.

Examples of the imidazoles include imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, and 2-phenyl-4-methylimidazole. 1-benzyl-2-methylimidazole, 1-benzyl-2-ethylimidazole, 1-benzyl-2-ethyl-5-methylimidazole, 2-phenyl-4-methyl-5- Hydroxydimethylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and the like.

The content of the curing agent for the epoxy resin or the curing accelerator in the adhesive layer is not particularly limited, and the optimum content varies depending on the type of the curing agent or the curing accelerator.

The blending ratio of the epoxy resin to the phenol resin is preferably, for example, 1 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component and 0.5 to 2.0 equivalents in the phenol resin. It is preferably from 0.8 to 1.2 equivalents. That is, if the ratio of the two is outside the above range, it will not advance. The hardening reaction is sufficiently performed, and the characteristics of the adhesive layer become easily deteriorated. In another embodiment of the thermosetting resin and the curing agent, the curing agent is 0.5 to 20 parts by mass with respect to 100 parts by mass of the thermosetting resin, and in other embodiments, the curing agent is 1 ~10 parts by mass. The content of the curing accelerator is preferably less than the content of the curing agent, and the curing accelerator is preferably 0.001 to 1.5 parts by mass, more preferably 0.01 to 0.95 parts by mass, per 100 parts by mass of the thermosetting resin. By adjusting within the above range, it is possible to assist in performing a sufficient hardening reaction. The content of the catalyst is preferably 0.001 to 1.5 parts by mass, more preferably 0.01 to 1.0 part by mass, per 100 parts by mass of the thermosetting resin.

Further, the adhesive layer 13 of the present invention can be suitably blended with a filler in accordance with the use thereof. As a result, it is possible to improve the cutting property of the adhesive layer in an uncured state, improve workability, adjust the melt viscosity, impart thixotropic properties, and impart thermal conductivity to the adhesive layer in the cured state, thereby improving the adhesion.

As the filler used in the present invention, an inorganic filler is preferred. The inorganic filler is not particularly limited, and for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium citrate, magnesium citrate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, or aluminum borate whisker can be used. , boron nitride, crystalline cerium oxide, amorphous cerium oxide, cerium oxide, and the like. Further, these types can be used alone or in combination of two or more types.

Further, among the above inorganic fillers, alumina, aluminum nitride, boron nitride, crystalline cerium oxide, amorphous cerium oxide, or the like is preferably used from the viewpoint of improving thermal conductivity. Also, from adjusting the melt viscosity or giving Thixotropy, using aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium citrate, magnesium citrate, calcium oxide, magnesium oxide, aluminum oxide, crystalline cerium oxide, amorphous cerium oxide It is better. Further, from the viewpoint of improving the cutting property, it is preferred to use alumina or cerium oxide.

When the content ratio of the filler is 30% by mass or more, it is excellent in the surface of the wire bonding property. In the case of wire bonding, the storage elastic modulus after hardening of the adhesive layer of the wafer is preferably adjusted to a range of 20 to 1000 MPa at 170 ° C, and if the content of the filler is 30% by mass or more, the adhesive layer is used. The storage elastic modulus after hardening is easily adjusted within this range. In addition, when the content ratio of the filler is 75% by mass or less, the film formability and the heating fluidity of the adhesive layer at the time of wafer bonding are excellent. When the heating fluidity of the adhesive layer is increased when the wafer is bonded, the adhesive layer and the adherend are adhered to each other, and the adhesion can be improved, and the unevenness of the adherend can be buried to easily suppress the void. It is preferably 70% by mass or less, more preferably 60% by mass or less.

The adhesive layer of the present invention can contain two or more kinds of fillers having different average particle diameters as the above filler. In this case, in the raw material mixture before the film formation, it is easy to prevent the viscosity from increasing when the filler content is high or the viscosity when the filler content is low, as compared with the case of using a single filler. When it is lowered, it is easy to obtain good film formability, and it is possible to control the fluidity of the uncured adhesive layer to be optimal, and at the same time, it is easy to obtain excellent adhesion after hardening of the adhesive layer.

Further, in the adhesive layer of the present invention, the average particle diameter of the filler is preferably 2.0 μm or less, and more preferably 1.0 μm. Average particle size of the filler When it is 2.0 μm or less, film formation becomes easy. Here, the film means a thickness of 20 μm or less. Moreover, when it is 0.01 micrometer or more, dispersibility is favorable.

Further, from the viewpoint of increasing or decreasing the viscosity of the raw material mixture before the film formation, controlling the fluidity of the uncured adhesive layer to be optimal, and improving the adhesion of the adhesive layer after hardening, the average is included. The first filler having a particle diameter in the range of 0.1 to 1.0 μm and the second filler having an average particle diameter of the primary particle diameter in the range of 0.005 to 0.03 μm are preferred. The first filler having an average particle diameter in the range of 0.1 to 1.0 μm and 99% or more is distributed in a particle diameter of 0.1 to 1.0 μm, and the average particle diameter of the primary particle diameter is 0.005 to 0.03 μm. Within the range, 99% or more of the particles are preferably distributed in the second filler having a particle diameter of 0.005 to 0.1 μm.

The average particle diameter in the present invention means that 50% by volume of the particles have a D50 value of a cumulative volume distribution curve of a diameter smaller than this value. In the present invention, the average particle diameter or D50 value is measured by a laser diffraction method using, for example, a Malvern Mastersizer 2000 manufactured by Malvern Instruments. In this technique, the particle size in the dispersion is measured by the diffraction of the laser light according to the application of either Fraunhofer or Mie theory. In the present invention, the Mie theory after correction using the Mie theory or the non-spherical particles, the average particle diameter or the D50 value is measured with respect to the scattering of the incident laser light at 0.02 to 135°.

In the present invention, in one aspect, the total amount of the adhesive composition constituting the adhesive layer 13 may be 10 to 40% by mass. A thermoplastic resin having a weight average molecular weight of 5,000 to 200,000, a thermal polymerizable component of 10 to 40% by mass, and a filler of 30 to 75% by mass. In this embodiment, the content of the filler may be 30 to 60% by mass, or may be 40 to 60% by mass. Further, the thermoplastic resin may have a mass average molecular weight of 5,000 to 150,000 or 10,000 to 100,000.

In another aspect, the thermal polymerizable resin having a weight average molecular weight of 200,000 to 2,000,000 and a thermal polymerization property of 20 to 50% by mass may be contained in an amount of 10 to 20% by mass based on the total of the adhesive composition constituting the adhesive layer 13. Ingredients, and 30 to 75% by mass of filler. In this embodiment, the content of the filler may be 30 to 60% by mass, or may be 30 to 50% by mass. Further, the thermoplastic resin may have a mass average molecular weight of 200,000 to 1,000,000 or 200,000 to 800,000.

By adjusting the blending ratio, the storage elastic modulus and fluidity of the adhesive layer 13 after curing can be optimized, and the heat resistance at high temperatures can be sufficiently obtained. Moreover, the control of the tear strength can also be performed.

The subsequent layer 13 has a tear strength (A) of 0.8 MPa or more in the right angle test method according to JIS K7128-3. When the tear strength (A) is 0.8 MPa or more, it is less likely to cause cuts or cracks when being transported, and the like, in the pre-cutting step of processing the adhesive layer 13 to a predetermined size, it can be reduced after stretching. Cracking occurs on the agent layer 13.

Further, in the right-angle test method, the tear strength (B) when the cut portion having a length of 1 mm is cut from the front end of the right-angle portion at the center line passing through the front end of the straight portion of the test piece is preferably 0.5 MPa or more. . If the tear strength (B) is 0.5 MPa or more, even if it is transported When the punch is cut and the cut is cut, the minimum cut can be suppressed, and if it is cut to this extent, the adhesive layer 13 can be broken even if it is extended in the pre-cutting step.

Further, the tear strength (C) of the adhesive layer 13 at a right angle test method prescribed by JIS K7128-3 at -15 ° C is preferably 0.8 MPa or less, more preferably 0.67 MPa or less. When the tear strength (C) is 0.8 MPa or less, the semiconductor processing tape 10 is expanded by expanding in a low temperature region (-15 to 0 ° C), and when the adhesive layer 13 is separated, the adhesive layer 13 can be formed. Good separation.

In order to set the tear strengths (A) and (B) in the above range, for example, by setting the content of the filler to 70% by mass or less, or by containing 5% or more of the thermoplastic resin, the tear strength can be enhanced. Further, when a decane coupling agent is contained or a filler having a substantially circular shape is used, the compatibility and adhesion of the filler to the resin are improved, so that the tear strength can be enhanced. In addition, in order to set the tear strength (C) within the above range, the glass transition temperature of the thermoplastic resin is set to 15 ° C or higher, and the molecular weight of the thermoplastic resin is preferably 260,000 or less.

In the tape 10 for semiconductor processing of the present invention, the adhesive layer 13 may be formed by directly or indirectly laminating a film (hereinafter referred to as an adhesive film) on the base film 11. The temperature at the time of lamination is preferably in the range of 10 to 100 ° C, and a linear pressure of 0.01 to 10 N/m is preferably applied. Further, such an adhesive film may be formed by forming an adhesive layer 13 on the release film. In this case, the release film may be peeled off after lamination, or a cover film for the semiconductor processing tape 10 may be directly used, and Stripping when wafer Can also be.

The foregoing film is also laminated on the entire surface of the adhesive layer 12, but a plurality of layers are cut into (adapted) the film shape in advance to be adhered to the adhesive layer 12. Therefore, when laminating the film corresponding to the wafer, as shown in FIG. 3, the adhesive layer 13 is provided on the portion to which the wafer W is bonded, and the adhesive layer 13 is not provided on the portion to which the annular frame 20 is bonded. There is an adhesive layer 12. In general, since the adhesive layer 13 is difficult to peel off from the adherend, the annular frame 20 can be bonded to the adhesive layer 12 by using the pre-cut adhesive film, and can be obtained when the tape is peeled off after use. The effect of adhesive residue is less likely to occur on the annular frame 20.

<Use>

The semiconductor processing tape 10 of the present invention is used in a method of manufacturing a semiconductor device including at least an expansion step of separating the adhesive layer 13 by expansion. Therefore, the order of other steps or steps and the like are not particularly limited. For example, it can be suitably used in the manufacturing methods (A) to (E) of the following semiconductor devices.

Semiconductor device manufacturing method (A)

A method of manufacturing a semiconductor device, comprising: (a) a step of bonding a surface protective tape on a surface of a wafer on which a circuit pattern has been formed, (b) a step of grinding a back surface of the wafer, and (c) the crystal The circle is heated to 70~80 °C, in the foregoing a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer, (d) removing the surface protective tape from the surface of the wafer, and (e) irradiating the predetermined portion of the wafer with laser light, and a step of forming a modified region formed by multiphoton absorption inside the wafer, and (f) separating the wafer and the adhesive layer of the semiconductor processing tape along a dividing line by expanding the semiconductor processing tape; Obtaining a step of expanding a plurality of wafers with the adhesive layer, and (g) removing the portion of the semiconductor processing tape after expansion by heat-shrinking a portion that does not overlap the wafer, thereby removing the occurrence of the expansion step And a step of (h) picking up the wafer having the adhesive layer from the adhesive layer of the semiconductor processing tape.

Semiconductor device manufacturing method (B)

A method of manufacturing a semiconductor device, comprising: (a) a step of bonding a surface protective tape on a surface of a wafer on which a circuit pattern has been formed, (b) a step of grinding a back surface of the wafer, and (c) the wafer a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while heating to 70 to 80 ° C, (d) removing the surface protective tape from the surface of the wafer, and (e) The separation line of the aforementioned wafer surface illuminates the laser light, and the front a step of separating the wafer into wafers, and (f) expanding the adhesive layer into the respective wafers by expanding the adhesive tape for semiconductor processing, and obtaining an expansion step of the plurality of wafers with the adhesive layer, (g) In the expanded semiconductor processing tape, the portion which does not overlap with the wafer is heated and shrunk to remove the slack generated in the expanding step, thereby maintaining the wafer spacing step, and (h) from the semiconductor The step of processing the adhesive layer of the adhesive tape to pick up the aforementioned wafer with the aforementioned adhesive layer.

Semiconductor device manufacturing method (C)

A method of manufacturing a semiconductor device, comprising: (a) a step of bonding a surface protective tape on a surface of a wafer on which a circuit pattern has been formed, (b) a step of grinding a back surface of the wafer, and (c) the crystal a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer in a state where the circle is heated to 70 to 80 ° C, (d) a step of peeling off the surface protective tape from the surface of the wafer, and (e) using The cutting blade is formed by cutting the wafer along the dividing line to separate the wafer, and (f) separating the adhesive layer into the respective wafers by expanding the semiconductor processing tape to obtain the adhesive layer Expansion steps of multiple chips, (g) in the above-mentioned semiconductor processing tape after expansion, by heating and shrinking a portion that does not overlap with the wafer, removing the slack generated in the expanding step, and further maintaining the step of the wafer, and (h) The step of picking up the aforementioned wafer with the aforementioned adhesive layer from the adhesive layer of the above-mentioned semiconductor processing tape.

Semiconductor device manufacturing method (D)

A method of manufacturing a semiconductor device, comprising: (a) a step of bonding a dicing tape on a back surface of a wafer on which a circuit pattern has been formed, and cutting a depth along the separation line to a depth less than the thickness of the wafer using a dicing blade ( b) a step of bonding the surface protective tape to the surface of the wafer, (c) peeling off the dicing tape, grinding the back surface of the wafer to separate the wafer into a back grinding step, and (d) heating the wafer to 70-80 a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer separated from the wafer, and (e) a step of peeling off the surface protective tape from the surface of the wafer separated into the wafer, in the state of °C, f) by expanding the above-mentioned semiconductor processing tape, separating the adhesive layer into the respective wafers, and obtaining an expansion step of the plurality of wafers with the adhesive layer, and (g) expanding the semiconductor processing tape Removing the expansion step by heating and shrinking a portion that does not overlap with the wafer The step of slackening, thereby maintaining the interval between the wafers, and (h) the step of picking up the wafer with the adhesive layer from the adhesive layer of the semiconductor processing tape.

Semiconductor device manufacturing method (E)

A method of manufacturing a semiconductor device, comprising: (a) a step of bonding a surface protection tape on a surface of a wafer on which a circuit pattern has been formed, and (b) irradiating a predetermined portion of the wafer to irradiate laser light, and the crystal is a step of forming a modified region formed by multiphoton absorption inside the circle, (c) grinding the back surface polishing step of the wafer back surface, and (d) heating the wafer to 70 to 80 ° C, on the back surface of the wafer a step of bonding the adhesive layer of the semiconductor processing tape, (e) removing the surface protective tape from the surface of the wafer, and (f) separating the wafer along the separation line by expanding the semiconductor processing tape And an expansion step of obtaining the plurality of wafers with the adhesive layer in the adhesive layer of the semiconductor processing tape, and (g) expanding the semiconductor processing tape after the expansion by not overlapping the wafer Partially heating and shrinking, removing the slack generated in the expanding step, thereby maintaining the step of the wafer, and (h) picking up the adhesive layer from the semiconductor processing tape The step of the layer of the wafer.

<How to use>

A method of using the tape when the semiconductor processing tape 10 of the present invention is applied to the above-described semiconductor device manufacturing method (A) will be described with reference to Figs. 2 to 5 . First, as shown in FIG. 2, a surface protective tape 14 for protecting a circuit pattern including an ultraviolet curable component is adhered to the surface of a wafer W on which a circuit pattern has been formed, and the back surface of the wafer W is ground. Back grinding step.

After the back surface polishing step is completed, as shown in FIG. 3, on the heating table 25 of the wafer mounting machine, the wafer W is attached to the surface side, and then the semiconductor processing tape 10 is bonded to the back surface of the wafer W. The semiconductor processing tape 10 used here is laminated with a film which is pre-cut (pre-cut) in accordance with the shape of the wafer W to be bonded, and is bonded to the wafer W on the adhesive layer. The adhesive layer 12 is exposed around the exposed area. The exposed portion of the adhesive layer 13 of the semiconductor processing tape 10 is bonded to the back surface of the wafer W, and the exposed portion of the adhesive layer 12 around the adhesive layer 13 is bonded to the annular frame 20. At this time, the heating table 25 is set to 70 to 80 ° C, whereby heating bonding is performed.

Next, the wafer W bonded to the semiconductor processing tape 10 is carried out from the heating table 25, and as shown in FIG. 4, the semiconductor processing tape 10 is placed on the suction table 26 with the side facing downward. Further, from the wafer W adsorbed and fixed on the suction table 26, ultraviolet rays of, for example, 1000 mJ/cm ^{2 are} irradiated onto the substrate surface side of the surface protective tape 14 using the energy ray source 27, and the surface protective tape 14 is crystallized. The bonding force of the circle W is lowered, and the surface protective tape 14 is peeled off from the surface of the wafer W.

Next, as shown in FIG. 5, the predetermined portion of the wafer W is irradiated with the laser light, and the modified region 32 formed by the multiphoton absorption is formed inside the wafer W.

Next, as shown in FIG. 6(a), the semiconductor processing tape 10 to which the wafer W and the ring frame 20 are bonded is placed on the step 21 of the expansion device so that the base film 11 side faces downward.

Next, as shown in FIG. 6(b), in the state in which the annular frame 20 is fixed, the hollow cylindrical shape pushing member 22 of the expanding device is raised, and the semiconductor processing tape 10 is expanded (expanded). As the expansion condition, the expansion speed is, for example, 5 to 500 mm/sec, and the expansion amount (upward amount) is, for example, 5 to 25 mm. Therefore, the semiconductor processing tape 10 is stretched to the radial direction of the wafer W, and the wafer W is separated into the wafer 34 unit from the modified region 32 as a starting point. At this time, in the portion of the adhesive layer 13 which is adjacent to the back surface of the wafer W, although the elongation (deformation) due to expansion is suppressed without causing cracking, at the position between the wafers 34, the tension is caused by the expansion of the tape. Concentration leads to rupture. Therefore, as shown in FIG. 6(c), the adhesive layer 13 is also separated together with the wafer W. Thereby, a plurality of wafers 34 with the adhesive layer 13 attached thereto can be obtained.

Next, as shown in Fig. 7, the step of returning the push-up member 22 to the original position and removing the slack of the semiconductor processing tape 10 generated in the previous expansion step to stably maintain the interval between the wafers 34 is carried out. In this step, for example, the warm air nozzle 29 is used to blow a warm air of 90 to 120 ° C to the annular heat-shrinkable region 28 between the region where the wafer 34 exists in the semiconductor processing tape 10 and the annular frame 20. Substrate film 11 The heat shrinkage causes the semiconductor processing tape 10 to be in a tight state. Thereafter, the adhesive layer 12 is subjected to an energy ray hardening treatment or a heat hardening treatment or the like to weaken the adhesion of the adhesive layer 12 to the adhesive layer 13, and then the wafer 34 is picked up.

<Example>

Next, the examples and comparative examples will be described in detail in order to clarify the effects of the present invention, but the present invention is not limited by the embodiments.

[Production of Tape for Semiconductor Processing] (1) Fabrication of substrate film

<Substrate film 1>

The resin beads of the ethylene-methacrylic acid copolymer zinc ion polymer (methacrylic acid content 13%, softening point 72 ° C, melting point 90 ° C) synthesized by the radical polymerization method were melted at 140 ° C The base film 1 was formed by forming an elongated film having a thickness of 100 μm using an extruder.

<Substrate film 2>

The resin pellets of low-density polyethylene (LDPE, density: 0.92 g/cm ³ , melting point: 110 ° C) were melted at 230 ° C, and formed into a long film having a thickness of 100 μm using an extruder. The obtained film was irradiated with an electron beam of 100 kGy to form a base film 2.

<Substrate film 3>

Styrene ‧ butadiene copolymer (Dynaron 1320P made by JSR, Styrene content: 10%, density: 0.89, MFR 3.5) and polypropylene (atactic polypropylene, ethylene content 1.4%, Mw400,000, melting point 154 ° C, density: 0.91) resin pellets at 35:65 After the ratio of the dry blending, the film was melted at 200 ° C, and a base film 3 was formed by forming an elongated film having a thickness of 100 μm using an extruder.

(2) Modulation of acrylic copolymer (a-1)

As the acrylic copolymer (A1) having a functional group, 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate, and methacrylic acid were prepared, and the ratio of 2-ethylhexyl acrylate was 60. a copolymer of mol% and a mass average molecular weight of 700,000. Next, 2-isocyanatoethyl methacrylate was added to have an iodine value of 20, and an acrylic copolymer (a-1) having a glass transition temperature of -50 ° C, a hydroxyl group of 10 mgKOH/g, and an acid value of 5 mgKOH/g was prepared. ).

(a-2)

The acrylic copolymer (A1) having a functional group is composed of lauryl acrylate, 2-hydroxyethyl acrylate, and methacrylic acid, and the ratio of lauryl acrylate is 60 mol%, and the mass average is A copolymer having a molecular weight of 800,000. Next, 2-isocyanatoethyl methacrylate was added to have an iodine value of 20, and an acrylic copolymer (a-2) having a glass transition temperature of -5 ° C, a hydroxyl group of 50 mgKOH/g, and an acid value of 5 mgKOH/g was prepared. ).

The acrylic copolymer (A1) having a functional group was prepared by using butyl acrylate, 2-hydroxyethyl acrylate, and methacrylic acid, and the ratio of butyl acrylate was 60 mol%, and the mass average was obtained. A copolymer having a molecular weight of 800,000. Next, 2-isocyanatoethyl methacrylate was added to have an iodine value of 20, and an acrylic copolymer (a-3) having a glass transition temperature of -40 ° C, a hydroxyl group of 30 mgKOH/g, and an acid value of 5 mgKOH/g was prepared. ).

(3) Modulation of the composition of the adhesive (b-1)

6.2 parts by mass of epoxy resin "1002" (manufactured by Mitsubishi Chemical Corporation, solid bisphenol A epoxy resin, epoxy equivalent 600), and phenol resin "MEH-7851SS" (Minghe Chemical Co., Ltd. product name) , biphenol phenol resin, hydroxyl equivalent 201) 51.8 parts by mass, epoxy resin "806" (trade name of Mitsubishi Chemical Corporation, bisphenol F type epoxy resin, epoxy equivalent 160, specific gravity 1.20) 41.9 parts by mass And the cerium oxide filler "SO-C2" (trade name, average particle diameter: 0.5 μm, manufactured by Admafine Co., Ltd.), 81.5 parts by mass, and "-Aerosil R972" (manufactured by Nippon Aerosil Co., Ltd.) MEK was added to the composition of 2.9 parts by mass of the primary particle diameter of 0.016 μm), and the mixture was stirred and mixed to prepare a uniform composition.

In this case, 23.0 parts by mass of an acrylic copolymer (weight average molecular weight: 260,000) derived from a monomer unit derived from epoxy acrylate or glycidyl methacrylate is used as a functional group-containing polymer. , "KBM-802" (trade name, decylpropyltrimethoxydecane, manufactured by Shin-Etsu Chemical Co., Ltd.) as a coupling agent, 0.6 parts by mass, and "Curezol 2PHZ-PW" as a hardening accelerator (Four Nations Chemicals Co., Ltd.) The product name of the company, 2-phenyl-4,5-dihydroxymethylimidazole, decomposition temperature 230 ° C) 0.1 parts by mass, stirred and mixed until uniform. This was filtered by vacuum filtration using a 100 mesh filter and vacuum defoaming was carried out to obtain a paint of the adhesive composition b-1.

(b-2)

For the epoxy resin "1002" (manufactured by Mitsubishi Chemical Corporation, solid bisphenol A epoxy resin, epoxy equivalent 600) 40 parts by mass, epoxy resin "806" (Mitsubishi Chemical Co., Ltd. product name, Bisphenol F type epoxy resin, epoxy equivalent 160, specific gravity 1.20) 100 parts by mass, hardener "Dyhard 100SF" (trade name of Degusa, dicyandiamide) 5 parts by mass, cerium oxide filler "SO-C2" ( "Aerosil R972" (trade name of Nippon Aerosil Co., Ltd., average particle diameter of primary particle diameter 0.014 μm) of 3 masses of a product name, an average particle diameter of 0.5 μm, and a cerium oxide filler, manufactured by Admafine Co., Ltd. MEK was added to the composition of the fraction, and the mixture was stirred and mixed to prepare a uniform composition.

In this case, 100 parts by mass of phenoxy resin "PKHH" (trade name, manufactured by INCHEM, mass average molecular weight: 52,000, glass transition temperature: 92 °C) was added, and "KBM-802" (a product manufactured by Shin-Etsu Chemical Co., Ltd.) was used as a coupling agent. Name, mercaptopropyltrimethoxydecane) 0.6 parts by mass, and "Curezol 2PHZ-PW" as a hardening accelerator (Four countries into stocks) The product name of the company, 2-phenyl-4,5-dihydroxymethylimidazole, decomposition temperature 230 ° C) 0.5 parts by mass, stirred and mixed until uniform. This was filtered by vacuum filtration using a 100 mesh filter and vacuum defoaming was carried out to obtain a paint of the adhesive composition b-2.

(b-3)

40 parts by mass of epoxy resin "1002" (manufactured by Mitsubishi Chemical Corporation, solid bisphenol A epoxy resin, epoxy equivalent 600), and epoxy resin "Epikote 828" (trade name of Mitsubishi Chemical Corporation) , bisphenol A type epoxy resin, epoxy equivalent 190) 30 parts by mass, hardener "Dyhard 100SF" (trade name of Degusa, dicyandiamide) 10 parts by mass, cerium oxide filler "SO-C2" (Admafine shares) MEK was added to the composition of the product name, the average particle diameter of 0.5 μm, and 180 parts by mass of the product, and the mixture was stirred and mixed to prepare a uniform composition.

In this case, 30 parts by mass of phenoxy resin "PKHH" (trade name, manufactured by INCHEM, mass average molecular weight: 52,000, glass transition temperature: 92 °C) was added, and "KBM-802" (a product manufactured by Shin-Etsu Chemical Co., Ltd.) was used as a coupling agent. 0.6 parts by mass of mercaptopropyltrimethoxydecane, and "Curezol 2PHZ-PW" as a hardening accelerator (trade name of Shikoku Kasei Co., Ltd., 2-phenyl-4,5-dihydroxymethyl) Imidazole, decomposition temperature 230 ° C) 0.5 parts by mass, stirred and mixed until homogeneous. This was filtered by vacuum filtration using a 100 mesh filter and vacuum defoaming was carried out to obtain a paint of the adhesive composition b-3.

(b-4)

15.0 parts by mass of epoxy resin "YX4000" (manufactured by Mitsubishi Chemical Corporation, biphenyl aldehyde type epoxy resin, epoxy equivalent 185), and phenol resin "LF-6161" (trade name, phenolic product, manufactured by DIC Corporation) 40.0 parts by mass of phenol resin, hydroxyl equivalent 118), epoxy resin "Epikote 828" (trade name of Mitsubishi Chemical Corporation, bisphenol A type epoxy resin, epoxy equivalent 190) 45.0 parts by weight, cerium oxide filler MEK was added to the composition of 5 parts by mass of "Aerosil R972" (trade name of Nippon Aerosil Co., Ltd., average particle diameter of primary particle diameter: 0.016 μm), and the mixture was stirred and mixed to prepare a uniform composition.

To this, an acrylic copolymer (weight average molecular weight: 850,000, Tg 12 ° C) containing 60.01 parts by mass of a monomer unit derived from epoxypropyl acrylate or glycidyl methacrylate is added as a functional group-containing polymer. "KBM-802" (trade name, decylpropyltrimethoxydecane, manufactured by Shin-Etsu Chemical Co., Ltd.) as a coupling agent, 0.6 parts by mass, and "Curezol 2PHZ-PW" as a curing accelerator (Four Nations) The product name of the company, 2-phenyl-4,5-dihydroxymethylimidazole, decomposition temperature 230 ° C) 0.1 parts by mass, stirred and mixed until uniform. This was filtered by vacuum filtration using a 100 mesh filter and vacuum defoaming was carried out to obtain a paint of the adhesive composition b-4.

(b-5)

50 parts by mass of epoxy resin "1002" (manufactured by Mitsubishi Chemical Corporation, solid bisphenol A epoxy resin, epoxy equivalent 600), epoxy 20 parts by mass of resin "Epikote 828" (trade name of Mitsubishi Chemical Corporation, bisphenol A type epoxy resin, epoxy equivalent 190), and curing agent "Dyhard 100SF" (trade name of Degusa, dicyandiamide) 10 mass MEK was added to the composition of 250 parts by mass of the cerium oxide filler "SO-C2" (trade name, average particle diameter: 0.5 μm, manufactured by Admafine Co., Ltd.), and the mixture was stirred and mixed to prepare a uniform composition.

In this case, 20 parts by mass of phenoxy resin "PKHH" (trade name, manufactured by INCHEM, mass average molecular weight: 52,000, and glass transition temperature: 92 °C) was added, and "KBM-802" (a product manufactured by Shin-Etsu Chemical Co., Ltd.) was used as a coupling agent. 0.6 parts by mass of mercaptopropyltrimethoxydecane, and "Curezol 2PHZ-PW" as a hardening accelerator (trade name of Shikoku Kasei Co., Ltd., 2-phenyl-4,5-dihydroxymethyl) Imidazole, decomposition temperature 230 ° C) 0.5 parts by mass, stirred and mixed until homogeneous. This was filtered by vacuum filtration using a 100 mesh filter and vacuum defoaming was carried out to obtain a paint of the adhesive composition b-5.

(b-6)

Epoxy resin "1002" (manufactured by Mitsubishi Chemical Corporation, solid bisphenol A epoxy resin, epoxy equivalent 600) 20 parts by mass, epoxy resin "Epikote 828" (Mitsubishi Chemical Co., Ltd. product name , bisphenol A type epoxy resin, epoxy equivalent 190) 20 parts by mass, hardener "Dyhard 100SF" (trade name of Degusa, dicyandiamide) 10 parts by mass, cerium oxide filler "SO-C2" (Admafine shares) The product name, the average particle size of 0.5 μm, and 250 parts by mass of the product made by the company MEK was added and stirred to form a homogeneous composition.

To this, 30 parts by mass of an acrylic copolymer (weight average molecular weight: 150,000) containing monomer units derived from epoxypropyl acrylate or glycidyl methacrylate is used as a functional group-containing polymer as a coupling. "KBM-802" (trade name, decyl propyl trimethoxy decane, manufactured by Shin-Etsu Chemical Co., Ltd.), 0.6 parts by mass, and "Curezol 2PHZ-PW" as a hardening accelerator (Shikoku Kasei Co., Ltd.) The product name, 2-phenyl-4,5-dihydroxymethylimidazole, decomposition temperature 230 ° C) 0.5 parts by mass, stirred and mixed until uniform. This was filtered by vacuum filtration using a 100 mesh filter and vacuum defoaming was carried out to obtain a paint of the adhesive composition b-6.

<Example 1>

5 parts by mass of Coronate L (manufactured by Nippon Polycarbonate) containing 100 parts by mass of the acrylic copolymer (a-1), Esacure KIP 150 (manufactured by Lamberti Co., Ltd.) 3 mass of a photopolymerization initiator The resulting mixture was dissolved in ethyl acetate and stirred to prepare an adhesive composition.

Next, on the release liner composed of the release-treated polyethylene terephthalate film, the adhesive composition was applied to a thickness of 10 μm after drying, and dried at 110 ° C for 3 minutes. The base film 1 is bonded to each other to form an adhesive sheet in which an adhesive layer is formed on the base film.

Next, the adhesive composition (b-1) is applied to the release liner on the release liner composed of the release-treated polyethylene terephthalate film. Thereafter, the thickness was 20 μm, and it was dried at 110 ° C for 5 minutes to form an adhesive film in which an adhesive layer was formed on the release liner.

The adhesive sheet is cut into a shape as shown in Fig. 3 and the like which can be attached to the annular frame in such a manner as to cover the opening. Further, the film is cut into a shape as shown in FIG. 3 and the like which can cover the back surface of the wafer. Further, as shown in FIG. 3 and the like, the adhesive layer side of the adhesive sheet is bonded to the adhesive layer side of the adhesive film on the periphery of the adhesive film to expose the adhesive layer 12 to form a semiconductor. Processing tape.

<Examples 2 to 6 and Comparative Example 1>

A tape for semiconductor processing was produced by the same method as in Example 1 except that the combination of the acrylic copolymer, the adhesive composition, and the adhesive composition was combined as shown in Tables 1 and 2.

The tear strength (A) to (C), the pre-cut workability, and the separability of the adhesive layer of the tape for semiconductor processing of Example ‧ Comparative Example were measured and evaluated as follows. The results are shown in Tables 1 and 2.

(1) Measurement of tear strength (A) ~ (C)

The adhesive layer of the release-release liner of the adhesive film used in the tape for semiconductor processing of the Example ‧ comparative example was laminated to a thickness of 100 μm, and according to JIS K 7128-3, it was taken as shown in Fig. 8(a). The test piece 100 shown was subjected to a tensile test using a tensile tester (TCL-NL-shaped, manufactured by Shimadzu Corporation) having a thermostatic chamber capable of adjusting the temperature, and the tear strength at 23 ° C was measured, respectively. ) with -15 ° C Tear strength (C). Further, also as shown in Fig. 8(b), the test piece 110 cut into the cut portion 115 having a length of 1 mm from the front end of the right angle portion A on the center line passing through the front end of the right angle portion A was measured for tear strength at 23 ° C ( B).

(2) Evaluation of pre-cutting workability

The pre-cutting property evaluation was performed by adhering the adhesive film used for each of the semiconductor processing tapes of Examples 1 to 7 and the adhesive film used for each of the semiconductor processing tapes of Comparative Example 1 to a roll of 50 m. In the case of a cylindrical shape, the circular surface of one of the cylindrical shapes was grounded and dropped three times from a height of 50 cm. Visually confirm whether the cut is made by dropping on the adhesive layer, and as a user of the 12-inch wafer, the cut of a circle having a diameter of 320 mm is cut at intervals of 58.5 mm, and the processing speed is set to 100 m at 10 m/min. The adhesive layer on the outer side of the cut is peeled off from the release liner and curled, and pre-cut processing is performed. A condition that does not cause any cracking at the time of curling is evaluated as a good product "○", and the case where the crack is caused only when the adhesive layer is caused to have a crack is evaluated as an allowable product "△", which will cause cracking. The situation was rated as defective product "X".

(3) Measurement of elongation

The elongation of the tape for semiconductor processing and the elongation after heating to 120 ° C were measured by a tensile tester (JIS B 7721) by the following tensile test. The tape for semiconductor processing of the examples and the comparative examples was punched into a dumbbell shape No. 1 (JIS K 6301) to prepare a test piece, and the measurement line was measured. The distance between the marking lines at a distance of 40 mm and a tensile speed of 1000 mm/min was obtained and the elongation was determined. Further, the semiconductor processing tape of the examples and the comparative examples which were extended to 200% by the above method was placed on a hot plate heated to 120 ° C for 15 seconds, and the distance between the lines was measured, and the heating was performed until Elongation after 120 °C.

(4) Evaluation of separation

The following semiconductor processing tapes were subjected to the following suitability tests for the semiconductor processing steps of the above-described examples and the comparative examples by the method described below.

(a) Apply a surface protection tape to the surface of the wafer on which the circuit pattern has been formed.

(b) performing a back grinding step of grinding the back surface of the wafer.

(c) bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while heating the wafer to 70 ° C, and bonding the semiconductor processing annular frame to the adhesion of the semiconductor processing tape The portion of the agent layer that is not overlapped with the adhesive layer.

(d) peeling off the surface protection tape from the aforementioned wafer surface.

(e) irradiating the predetermined portion of the wafer with the laser beam, and forming a modified region due to multiphoton absorption inside the wafer.

(f) By spreading the above-mentioned semiconductor processing tape by 10%, the wafer and the adhesive layer are separated along the dividing line to obtain a plurality of wafers with the above-mentioned adhesive layer.

(g) an extension step of removing (f) the portion of the tape for semiconductor processing that does not overlap the wafer (the annular region between the region where the wafer exists and the annular frame) is heated to 120 ° C to shrink The slack generated in the film maintains the spacing of the wafers.

(h) Picking up the aforementioned wafer with an adhesive layer from the adhesive layer of the tape for conductor processing.

In addition, the step (f) is a ring frame for cutting DDS-2300 manufactured by Disco Co., Ltd., which is attached to a tape for semiconductor processing, by an expansion ring of DDS-2300 manufactured by Disco Co., Ltd. Then, the portion of the periphery of the wafer bonding portion of the semiconductor processing tape that is not overlapped with the wafer is pressed against the circular push-up member to expand. Further, the conditions of the steps (f) and (g) are set to an expansion speed of 300 mm/sec and an expansion amount (upward pushing amount) of 20 mm. Here, the amount of expansion refers to the amount of change in the relative position of the annular frame and the push-up member before and after the pressing.

With respect to the tapes for semiconductor processing of Examples 1 to 6 and Comparative Example 1, after the step (g), it was visually observed whether or not any of the 100 wafers was successfully separated, and the separation ratio of the adhesive layer in the above step (f) was calculated.

As shown in Table 1, the tape for semiconductor processing of Examples 1 to 6 had a tear strength (A) of 1.11 or more, that is, 0.8 as defined in the claim, because the adhesive layer had a right angle test method as specified in JIS K7128-3. Since it is MPa or more, the pre-cut workability is good. In particular, in the semiconductor processing tapes of Examples 1 to 4 and 6, in the rectangular test method of the adhesive layer, when the cut portion having a length of 1 mm was cut from the front end of the right corner portion on the center line passing through the front end of the straight portion of the test piece. Since the tear strength (B) is 0.5 MPa or more, the result of excellent precut workability is obtained.

On the other hand, the tape for semiconductor processing of Comparative Example 1 is As shown in Table 2, since the tear strength (A) of the adhesive layer was less than 0.8 MPa, the result of poor pre-cut workability was caused.

10‧‧‧Semiconductor processing tape

11‧‧‧Base film

12‧‧‧Adhesive layer

13‧‧‧ adhesive layer

15‧‧‧Adhesive film

Claims (5)

An adhesive tape for semiconductor processing, characterized in that the adhesive layer and the adhesive sheet are laminated, and the tear strength (A) of the adhesive layer according to the right angle test method specified in JIS K7128-3 is 0.8 MPa or more. The tear strength (C) at a right angle test method prescribed in JIS K7128-3 at -15 ° C was 0.8 MPa or less. The tape for semiconductor processing according to claim 1, wherein in the above-described right-angle test method, the adhesive layer is cut into a cut portion having a length of 1 mm from a front end of the right-angle portion at a front end of a straight portion passing through the straight portion of the test piece. The tear strength (B) is 0.5 MPa or more. The tape for semiconductor processing according to claim 1 or claim 2, wherein the adhesive sheet has an elongation of 200% or more. The tape for semiconductor processing according to claim 1 or claim 2, wherein the adhesive sheet is extended to an elongation of 200%, and then the elongation is 120% or less by heating to 120 °C. The tape for semiconductor processing according to claim 1 or claim 2, wherein the wafer adhered to the adhesive layer and the adhesive layer or the adhesive layer alone is separated by expanding the adhesive sheet The corresponding corresponds to the user of the individual wafer.