TWI633593B - Cutting ‧ grain bonded film - Google Patents

Cutting ‧ grain bonded film Download PDF

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TWI633593B
TWI633593B TW103120520A TW103120520A TWI633593B TW I633593 B TWI633593 B TW I633593B TW 103120520 A TW103120520 A TW 103120520A TW 103120520 A TW103120520 A TW 103120520A TW I633593 B TWI633593 B TW I633593B
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adhesive layer
blade
cutting blade
cutting
dicing
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TW103120520A
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TW201513192A (en
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木村雄大
三隅貞仁
大西謙司
菅生悠樹
宍戶雄一郎
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日東電工股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)

Abstract

本發明提供能夠抑制切割刀片的鋒利度的降低且能夠抑制毛刺的產生的切割‧晶粒接合薄膜。本發明關於將裸矽晶圓分步切割(step cut)時的切割刀片的磨耗量為20~200μm的切割‧晶粒接合薄膜。 The present invention provides a dicing die-bonding film capable of suppressing a decrease in sharpness of a dicing blade and capable of suppressing generation of burrs. The present invention relates to a dicing die-bonding film having an abrasion amount of a cutting blade of 20 to 200 μm when a bare cut wafer is step cut.

Description

切割‧晶粒接合薄膜 Cutting ‧ grain bonded film

本發明關於切割‧晶粒接合薄膜。 The present invention relates to a cut ‧ grain bonded film.

在切割半導體晶圓的步驟中,有時將半導體晶圓在貼附於切割薄膜的狀態下進行切割。作為切割薄膜,已知具有在基材上層疊有黏著劑層的結構的切割薄膜(例如參照專利文獻1)。 In the step of cutting the semiconductor wafer, the semiconductor wafer is sometimes diced in a state of being attached to the dicing film. As the dicing film, a dicing film having a structure in which an adhesive layer is laminated on a substrate is known (for example, see Patent Document 1).

然而,使用切割薄膜對半導體晶圓進行切割時,有時在切割線上殘留毛刺狀的異物(源自基材的研磨屑)。 However, when the semiconductor wafer is diced using the dicing film, burr-like foreign matter (grinding debris derived from the substrate) may remain on the dicing line.

〔先前技術文獻〕 [Previous Technical Literature] 〔專利文獻〕 [Patent Document]

專利文獻1:日本特開2011-198976號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2011-198976

專利文獻1中公開了為了減少毛刺的產生而使用特定的樹脂作為基材的構成成分的切割薄膜。然而,將專利文獻1等中記載的現有的切割薄膜在黏貼於半導體晶圓的狀 態下大量切割時,切割刀片上附著研磨屑,產生阻塞,導致切割刀片的鋒利度降低。切割刀片的鋒利度的降低使毛刺容易產生。 Patent Document 1 discloses a dicing film in which a specific resin is used as a constituent component of a substrate in order to reduce the occurrence of burrs. However, the conventional dicing film described in Patent Document 1 or the like is attached to the semiconductor wafer. In the case of a large number of cuttings, the cutting blades are attached with grinding debris, which causes clogging, resulting in a decrease in the sharpness of the cutting blade. The reduction in the sharpness of the cutting blade makes the burr easy to produce.

本發明的目的在於,解決前述問題,提供能夠抑制切割刀片的鋒利度的降低且能夠抑制毛刺的產生的切割‧晶粒接合薄膜。 An object of the present invention is to solve the above problems and to provide a dicing die-bonding film capable of suppressing a decrease in sharpness of a dicing blade and suppressing generation of burrs.

本發明關於一種切割‧晶粒接合薄膜,其為將基材、黏著劑層和接著劑層依次層疊而成的切割‧晶粒接合薄膜,其中,在前述接著劑層上黏貼有厚度100μm的裸矽晶圓的狀態下,第一切割刀片以切入深度50μm將前述裸矽晶圓切割100m後,沿前述第一切割刀片的切口、第二切割刀片以至少到達前述黏著劑層的切入深度將前述裸矽晶圓和前述接著劑層切斷100m時的前述第二切割刀片的磨耗量為20~200μm,前述第二切割刀片的刃寬小於前述第一切割刀片的刃寬,利用前述第一切割刀片的切口形成條件是:速度50mm/sec、轉速40000rpm,利用前述第二切割刀片的切斷條件是:速度50mm/sec、轉速45000rpm。 The present invention relates to a dicing die-bonding film which is a dicing die-bonding film in which a substrate, an adhesive layer and an adhesive layer are sequentially laminated, wherein a bare thickness of 100 μm is adhered to the adhesive layer. In the state of the wafer, the first dicing blade cuts the bare boring wafer by 100 m at a plunging depth of 50 μm, along the slit of the first cutting blade and the cutting depth of the second dicing blade to at least reach the aforementioned adhesive layer. The abrasion amount of the second cutting blade when the bare wafer and the adhesive layer are cut by 100 m is 20 to 200 μm, and the blade width of the second cutting blade is smaller than the blade width of the first cutting blade, and the first cutting is performed by using the first cutting The slit forming conditions of the blade were a speed of 50 mm/sec and a rotational speed of 40,000 rpm, and the cutting conditions of the second cutting blade were: a speed of 50 mm/sec and a rotational speed of 45,000 rpm.

通過磨耗量為20μm以上,能夠抑制切割刀片的鋒利度的降低,能夠抑制毛刺的產生。另一方面,通過磨耗量為200μm以下,能夠防止切割刀片的壽命變得過短。 When the amount of abrasion is 20 μm or more, it is possible to suppress a decrease in the sharpness of the dicing blade, and it is possible to suppress the occurrence of burrs. On the other hand, when the abrasion amount is 200 μm or less, the life of the dicing blade can be prevented from becoming too short.

需要說明的是,本發明中限定了使用2種切割刀片分 步切割(step cut)裸矽晶圓時的第二切割刀片的磨耗量,但本發明的切割‧晶粒接合薄膜在採用單步切割等其它切割方法時也能夠發揮前述效果。 It should be noted that the present invention defines the use of two types of cutting blades. The amount of abrasion of the second cutting blade when the bare wafer is stepped is stepped, but the cutting/grain bonding film of the present invention can also exert the aforementioned effects when other cutting methods such as single-step cutting are employed.

較佳的是,前述接著劑層的厚度/前述基材和前述黏著劑層的總厚度為0.045~0.9。通過為0.045以上,可得到切割刀片的研磨(整飾)效果,能夠抑制切割刀片的鋒利度的降低。通過為0.9以下,能夠防止切割刀片的壽命變得過短。 Preferably, the thickness of the adhesive layer/the total thickness of the substrate and the adhesive layer is 0.045 to 0.9. When it is 0.045 or more, the grinding (finishing) effect of a dicing blade can be obtained, and the fall of the sharpness of a dicing blade can be suppressed. When the pass ratio is 0.9 or less, the life of the dicing blade can be prevented from becoming too short.

較佳的是,前述接著劑層包含球狀氧化鋁填料作為研磨劑,前述接著劑層中的前述球狀氧化鋁填料的含量為60~88重量%。通過使接著劑層中含有硬度僅次於金剛石的氧化鋁,能夠良好地研磨切割刀片。另外,通過使氧化鋁的形狀為可高度填充的球狀,可得到良好的研磨效果。進而,通過使球狀氧化鋁填料的含量為上述範圍內,能夠良好地研磨切割刀片,能夠防止鋒利度的降低。 Preferably, the adhesive layer contains a spherical alumina filler as an abrasive, and the content of the spherical alumina filler in the adhesive layer is 60 to 88% by weight. By including the alumina having hardness second only to diamond in the adhesive layer, the dicing blade can be satisfactorily polished. Further, by making the shape of the alumina into a highly fillable spherical shape, a good polishing effect can be obtained. Further, when the content of the spherical alumina filler is within the above range, the dicing blade can be satisfactorily polished, and the reduction in sharpness can be prevented.

根據本發明,能夠抑制切割刀片的鋒利度的降低,並且能夠抑制毛刺的產生。 According to the present invention, it is possible to suppress a decrease in the sharpness of the cutting blade, and it is possible to suppress the occurrence of burrs.

1‧‧‧基材 1‧‧‧Substrate

2‧‧‧黏著劑層 2‧‧‧Adhesive layer

3‧‧‧接著劑層 3‧‧‧ adhesive layer

4‧‧‧半導體晶圓 4‧‧‧Semiconductor wafer

5‧‧‧半導體晶片 5‧‧‧Semiconductor wafer

6‧‧‧被著體 6‧‧‧Being

7‧‧‧接合線 7‧‧‧bonding line

8‧‧‧密封樹脂 8‧‧‧ Sealing resin

10‧‧‧切割‧晶粒接合薄膜 10‧‧‧Cutting ‧ die bonding film

11‧‧‧切割薄膜 11‧‧‧ cutting film

21‧‧‧第一切割刀片 21‧‧‧First cutting blade

22‧‧‧切口 22‧‧‧ incision

23‧‧‧第二切割刀片 23‧‧‧Second cutting blade

24‧‧‧裸矽晶圓 24‧‧‧Naked wafer

圖1為實施方式1的切割‧晶粒接合薄膜的截面示意圖。 Fig. 1 is a schematic cross-sectional view showing a dicing die-bonding film of Embodiment 1.

圖2為實施方式1的切割‧晶粒接合薄膜的變形例的 截面示意圖。 Fig. 2 is a view showing a modification of the dicing die-bonding film of the first embodiment; Schematic diagram of the section.

圖3為示意性地示出半導體裝置的製造步驟的一部分的圖。 FIG. 3 is a view schematically showing a part of a manufacturing step of a semiconductor device.

圖4的(a)為示意性地示出第一切割刀片切入裸矽晶圓的情況的圖。圖4的(b)為示意性地示出利用第一切割刀片形成了切口的裸矽晶圓的截面的一部分的圖。 (a) of FIG. 4 is a view schematically showing a state in which the first dicing blade is cut into the bare enamel wafer. (b) of FIG. 4 is a view schematically showing a part of a cross section of a bare wafer in which a slit is formed using a first dicing blade.

圖5的(a)為示意性地示出第二切割刀片切斷裸矽晶圓和接著劑層的情況的圖。圖5的(b)為示意性地示出利用第二切割刀片切斷了的裸矽晶圓的截面的一部分的圖。 (a) of FIG. 5 is a view schematically showing a state in which the second cutting blade cuts the bare wafer and the adhesive layer. (b) of FIG. 5 is a view schematically showing a part of a cross section of a bare wafer cut by a second dicing blade.

〔實施發明之的最佳形態〕 [Best Practice for Carrying Out the Invention]

以下示出實施方式,詳細說明本發明,但本發明並不僅限定於這些實施方式。 The present invention will be described in detail below with reference to embodiments, but the invention is not limited thereto.

〔實施方式1〕 [Embodiment 1]

圖1為實施方式1的切割‧晶粒接合薄膜的截面示意圖。圖2為實施方式1的切割‧晶粒接合薄膜的變形例的截面示意圖。 Fig. 1 is a schematic cross-sectional view showing a dicing die-bonding film of Embodiment 1. Fig. 2 is a schematic cross-sectional view showing a modification of the dicing die-bonding film of the first embodiment.

如圖1所示,切割‧晶粒接合薄膜10具有在切割薄膜11上層疊有接著劑層3的結構。切割薄膜11是在基材1上層疊黏著劑層2而構成的,接著劑層3設置在該黏著劑層2上。另外,切割‧晶粒接合薄膜10也可以為如圖 2所示僅在工件(半導體晶圓4等)貼附部分形成有接著劑層3的構成。 As shown in FIG. 1, the dicing die-bonding film 10 has a structure in which an adhesive layer 3 is laminated on the dicing film 11. The dicing film 11 is formed by laminating an adhesive layer 2 on a substrate 1, and an adhesive layer 3 is provided on the adhesive layer 2. In addition, the cut ‧ grain bonded film 10 can also be as shown in the figure 2 shows a configuration in which the adhesive layer 3 is formed only on the workpiece (semiconductor wafer 4 or the like).

在切割‧晶粒接合薄膜10的接著劑層3黏貼有厚度100μm的裸矽晶圓的狀態下,第一切割刀片以切入深度50μm將裸矽晶圓切割100m後,沿第一切割刀片的切口、第二切割刀片以至少到達黏著劑層2的切入深度將裸矽晶圓和接著劑層3切斷100m時的第二切割刀片的磨耗量為20μm以上。通過為20μm以上,能夠抑制切割刀片的鋒利度的降低,能夠抑制毛刺的產生。從抑制切割刀片的鋒利度的降低的觀點出發,磨耗量越大越較佳。因此,磨耗量較佳為30μm以上、更佳為50μm以上。 In a state in which the adhesive layer 3 of the ‧ grain bonded film 10 is pasted with a bare enamel wafer having a thickness of 100 μm, the first dicing blade cuts the bare enamel wafer by 100 m at a plunging depth of 50 μm, and the slit along the first cutting blade The second cutting blade has an abrasion amount of the second cutting blade when the bare wafer and the adhesive layer 3 are cut by 100 m at least at the depth of penetration of the adhesive layer 2 to 20 μm or more. When the thickness is 20 μm or more, it is possible to suppress the decrease in the sharpness of the dicing blade, and it is possible to suppress the occurrence of burrs. From the viewpoint of suppressing the decrease in the sharpness of the dicing blade, the larger the amount of abrasion, the better. Therefore, the amount of abrasion is preferably 30 μm or more, and more preferably 50 μm or more.

另一方面,從切割刀片的壽命的觀點出發,磨耗量越小越較佳。具體而言,磨耗量為200μm以下、較佳為150μm以下、更佳為120μm以下。 On the other hand, from the viewpoint of the life of the dicing blade, the smaller the amount of abrasion, the better. Specifically, the abrasion amount is 200 μm or less, preferably 150 μm or less, and more preferably 120 μm or less.

裸矽晶圓是指,進行圖案形成等加工處理之前的狀態的矽晶圓。作為第一切割刀片和第二切割刀片,可以適宜地使用在樹脂中嵌入金剛石顆粒而成的刀片。 The bare wafer is a germanium wafer in a state before processing such as pattern formation. As the first cutting blade and the second cutting blade, a blade in which diamond particles are embedded in a resin can be suitably used.

需要說明的是,第二切割刀片的刃寬小於第一切割刀片的刃寬。另外,利用第一切割刀片的切口形成在進給速度50mm/sec、轉速40000rpm的條件下進行。利用第二切割刀片的切斷在進給速度50mm/sec、轉速45000rpm的條件下進行。 It should be noted that the blade width of the second cutting blade is smaller than the blade width of the first cutting blade. Further, the slit formed by the first cutting blade was formed under the conditions of a feed speed of 50 mm/sec and a number of revolutions of 40,000 rpm. The cutting by the second cutting blade was carried out under the conditions of a feed speed of 50 mm/sec and a number of revolutions of 45,000 rpm.

磨耗量可以通過實施例中記載的方法測定。 The amount of abrasion can be measured by the method described in the examples.

(接著劑層3) (adhesive layer 3)

接著劑層3例如可列舉出由熱塑性樹脂和熱固化性樹脂形成的層,更具體而言,例如可列舉出由環氧樹脂、酚醛樹脂、和丙烯酸類樹脂形成的層。 The coating layer 3 is, for example, a layer formed of a thermoplastic resin and a thermosetting resin, and more specifically, a layer formed of an epoxy resin, a phenol resin, and an acrylic resin is exemplified.

關於前述環氧樹脂,只要是作為接著劑組合物常用的環氧樹脂就沒有特別限定,例如可使用雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、芴型、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三羥苯基甲烷型、四羥苯基乙烷型等的二官能環氧樹脂或多官能環氧樹脂、或者乙內醯脲型、三縮水甘油基異氰脲酸酯型或縮水甘油胺型等的環氧樹脂。這些可以單獨或組合使用2種以上來使用。這些環氧樹脂當中,在本發明中,特別較佳具有苯環、聯苯環、萘環等芳香族環的環氧樹脂。具體而言,例如可列舉出酚醛清漆型環氧樹脂、含亞二甲苯基骨架的苯酚酚醛清漆型環氧樹脂、含聯苯骨架的酚醛清漆型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、四甲基聯苯酚型環氧樹脂、三苯基甲烷型環氧樹脂等。這是因為這些環氧樹脂富於與作為固化劑的酚醛樹脂的反應性,耐熱性等優異。需要說明的是,環氧樹脂較少地含有腐蝕半導體元件的離子性雜質等。 The epoxy resin is not particularly limited as long as it is a commonly used epoxy resin as an adhesive composition. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenation double can be used. Difunctional ring of phenol type A, bisphenol AF type, biphenyl type, naphthalene type, anthraquinone type, phenol novolac type, o-cresol novolac type, trishydroxyphenylmethane type, tetrahydroxyphenylethane type, etc. An epoxy resin or a polyfunctional epoxy resin, or an epoxy resin such as a carbendazim type, a triglycidyl isocyanurate type or a glycidylamine type. These can be used individually or in combination of 2 or more types. Among these epoxy resins, in the present invention, an epoxy resin having an aromatic ring such as a benzene ring, a biphenyl ring or a naphthalene ring is particularly preferable. Specific examples thereof include a novolak type epoxy resin, a xylylene skeleton-containing phenol novolak type epoxy resin, a biphenyl skeleton-containing novolak type epoxy resin, and a bisphenol A type epoxy resin. Bisphenol F type epoxy resin, tetramethyl biphenol type epoxy resin, triphenylmethane type epoxy resin, and the like. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent, and are excellent in heat resistance and the like. It should be noted that the epoxy resin contains less ionic impurities or the like which corrode the semiconductor element.

前述環氧樹脂的重量平均分子量較佳為300~1500的範圍內、更佳為350~1000的範圍內。重量平均分子量不足300時,有時熱固化後的晶粒接合薄膜3的機械強度、耐熱性、耐濕性降低。另一方面,大於1500時,有時熱 固化後的晶粒接合薄膜成為剛性而變得脆弱。需要說明的是,本發明中的重量平均分子量是指,利用凝膠滲透色譜法(GPC)使用基於標準聚苯乙烯的標準曲線而得到的聚苯乙烯換算值。 The weight average molecular weight of the epoxy resin is preferably in the range of 300 to 1,500, more preferably in the range of 350 to 1,000. When the weight average molecular weight is less than 300, the mechanical strength, heat resistance, and moisture resistance of the die-bonding film 3 after heat curing may be lowered. On the other hand, when it is greater than 1500, sometimes hot The crystal grain bonded film after curing becomes rigid and becomes weak. In addition, the weight average molecular weight in this invention is a polystyrene conversion value obtained by the gel permeation chromatography (GPC) using the standard curve based on standard polystyrene.

進而,前述酚醛樹脂作為前述環氧樹脂的固化劑發揮作用,例如可列舉出苯酚酚醛清漆樹脂、苯酚聯苯樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、叔丁基苯酚酚醛清漆樹脂、壬基苯酚酚醛清漆樹脂等酚醛清漆型酚醛樹脂、可溶型酚醛樹脂、聚對羥基苯乙烯等聚羥基苯乙烯等。這些可以單獨或組合使用2種以上來使用。這些酚醛樹脂當中,較佳苯酚酚醛清漆樹脂、苯酚芳烷基樹脂。這是因為能夠提高半導體裝置的連接可靠性。 Further, the phenol resin functions as a curing agent for the epoxy resin, and examples thereof include a phenol novolak resin, a phenol biphenyl resin, a phenol aralkyl resin, a cresol novolak resin, and a t-butyl phenol novolak resin. A novolac type phenol resin such as a nonylphenol novolak resin, a soluble phenol resin, or a polyhydroxystyrene such as polyparaxyl styrene. These can be used individually or in combination of 2 or more types. Among these phenol resins, a phenol novolak resin and a phenol aralkyl resin are preferred. This is because the connection reliability of the semiconductor device can be improved.

前述酚醛樹脂的重量平均分子量較佳為300~1500的範圍內、更佳為350~1000的範圍內。重量平均分子量不足300時,有時前述環氧樹脂的熱固化不充分而得不到充分的強韌性。另一方面,重量平均分子量大於1500時,黏度變高,有時晶粒接合薄膜製作時的操作性降低。 The weight average molecular weight of the phenol resin is preferably in the range of 300 to 1,500, more preferably in the range of 350 to 1,000. When the weight average molecular weight is less than 300, the thermal curing of the epoxy resin may be insufficient, and sufficient toughness may not be obtained. On the other hand, when the weight average molecular weight is more than 1,500, the viscosity is high, and the workability at the time of production of the die-bonding film may be lowered.

關於前述環氧樹脂與酚醛樹脂的配混比例,例如以相對於前述環氧樹脂成分中的環氧基1當量,酚醛樹脂中的羥基為0.5當量~2.0當量的方式進行配混是適宜的。更適宜為0.8當量~1.2當量。即,這是因為,兩者的配混比例偏離前述範圍時,無法進行充分的固化反應,環氧樹脂固化物的特性容易劣化。 The compounding ratio of the epoxy resin to the phenol resin is preferably, for example, 1 to 2.0 equivalents based on 1 equivalent of the epoxy group in the epoxy resin component, and the hydroxyl group in the phenol resin is 0.5 equivalent to 2.0 equivalents. More preferably, it is 0.8 equivalent - 1.2 equivalent. In other words, when the mixing ratio of the two is out of the above range, a sufficient curing reaction cannot be performed, and the properties of the cured epoxy resin are likely to deteriorate.

接著劑層3中的環氧樹脂和酚醛樹脂的總含量較佳為 5重量%以上、更佳為9重量%以上。為5重量%以上時,通過環氧樹脂與酚醛樹脂的交聯反應,可得到耐回流焊可靠性。另外,接著劑層3中的環氧樹脂和酚醛樹脂的總含量較佳為40重量%以下、更佳為30重量%以下。為40重量%以下時,能夠抑制接著劑層3的脆弱化。環氧樹脂和酚醛樹脂通常為低分子量成分,在室溫下的撓性低,因此總含量過多時,存在接著劑層3變得容易破裂的傾向。 The total content of the epoxy resin and the phenolic resin in the layer 3 is preferably 5% by weight or more, more preferably 9% by weight or more. When it is 5% by weight or more, the reliability of reflow resistance can be obtained by a crosslinking reaction between an epoxy resin and a phenol resin. Further, the total content of the epoxy resin and the phenol resin in the adhesive layer 3 is preferably 40% by weight or less, more preferably 30% by weight or less. When it is 40% by weight or less, the brittleness of the adhesive layer 3 can be suppressed. The epoxy resin and the phenol resin are usually low molecular weight components and have low flexibility at room temperature. Therefore, when the total content is too large, the adhesive layer 3 tends to be easily broken.

作為前述丙烯酸類樹脂,沒有特別限定,本發明中,較佳含羧基丙烯酸類共聚物、含環氧基丙烯酸類共聚物。作為前述含羧基丙烯酸類共聚物中使用的官能團單體,可列舉出丙烯酸或甲基丙烯酸。丙烯酸或甲基丙烯酸的含量以酸值為1~4的範圍內的方式進行調節。其剩餘部分可以使用丙烯酸甲酯、甲基丙烯酸甲酯等具有碳數1~8的烷基的丙烯酸烷基酯、甲基丙烯酸烷基酯、苯乙烯、或丙烯腈等的混合物。其中,特別較佳(甲基)丙烯酸乙酯和/或(甲基)丙烯酸丁酯。混合比率較佳考慮後述的前述丙烯酸類樹脂的玻璃化轉變溫度(Tg)而進行調整。另外,作為聚合方法,沒有特別限定,例如可以採用溶液聚合法、本體聚合法、懸浮聚合法、乳液聚合法等現有公知的方法。 The acrylic resin is not particularly limited, and in the present invention, a carboxyl group-containing acrylic copolymer or an epoxy group-containing acrylic copolymer is preferred. The functional group monomer used in the carboxyl group-containing acrylic copolymer may, for example, be acrylic acid or methacrylic acid. The content of acrylic acid or methacrylic acid is adjusted in such a manner that the acid value is in the range of 1 to 4. For the remainder, a mixture of an alkyl acrylate having an alkyl group having 1 to 8 carbon atoms such as methyl acrylate or methyl methacrylate, an alkyl methacrylate, styrene, or acrylonitrile can be used. Among them, ethyl (meth)acrylate and/or butyl (meth)acrylate are particularly preferred. The mixing ratio is preferably adjusted in consideration of the glass transition temperature (Tg) of the acrylic resin to be described later. In addition, the polymerization method is not particularly limited, and for example, a conventionally known method such as a solution polymerization method, a bulk polymerization method, a suspension polymerization method, or an emulsion polymerization method can be employed.

另外,作為可與前述單體成分共聚的其它單體成分,沒有特別限定,例如可列舉出丙烯腈等。這些可共聚的單體成分的用量相對於全部單體成分較佳為1重量%~20重量%的範圍內。通過含有該數值範圍內的其它單體成分, 可以實現內聚力、接著性等的改善。 Further, the other monomer component copolymerizable with the monomer component is not particularly limited, and examples thereof include acrylonitrile and the like. The amount of these copolymerizable monomer components is preferably in the range of 1% by weight to 20% by weight based on the total of the monomer components. By containing other monomer components within this range of values, Improvements in cohesion, adhesion, and the like can be achieved.

接著劑層3中的丙烯酸類樹脂的含量較佳為2重量%以上、更佳為5重量%以上。為2重量%以上時,容易保持作為薄膜的形狀。另外,丙烯酸類樹脂的含量較佳為15重量%以下、更佳為10重量%以下。為15重量%以下時,可得到高溫下的良好的凹凸追隨性。 The content of the acrylic resin in the subsequent agent layer 3 is preferably 2% by weight or more, and more preferably 5% by weight or more. When it is 2% by weight or more, it is easy to maintain the shape as a film. Further, the content of the acrylic resin is preferably 15% by weight or less, more preferably 10% by weight or less. When it is 15% by weight or less, good unevenness at high temperature can be obtained.

接著劑層3通常包含研磨劑。通過使接著劑層3中含有研磨劑,能夠研磨(整飾)切割刀片表面,能夠防止切割刀片的鋒利度的降低。 The layer of agent 3 then typically contains an abrasive. By including the abrasive in the adhesive layer 3, the surface of the dicing blade can be polished (finished), and the sharpness of the dicing blade can be prevented from being lowered.

作為研磨劑,較佳球狀氧化鋁填料。氧化鋁具有僅次於金剛石的硬度,因此通過使接著劑層3中含有氧化鋁,能夠良好地研磨切割刀片。另外,氧化鋁為低填充量時,研磨效果小,但通過使氧化鋁的形狀為可高度填充的球狀,可得到良好的研磨效果。 As the abrasive, a spherical alumina filler is preferred. Since alumina has a hardness second only to diamond, the dicing blade can be satisfactorily polished by including alumina in the adhesive layer 3. Further, when the alumina has a low filling amount, the polishing effect is small, but by making the shape of the alumina into a highly filled spherical shape, a good polishing effect can be obtained.

球狀氧化鋁填料的平均粒徑較佳為0.3μm以上、更佳為0.5μm以上。通過為0.3μm以上,可得到高溫下的凹凸追隨性,並且高度填充成為可能。另外,球狀氧化鋁填料的平均粒徑較佳為15μm以下、更佳為10μm以下。通過為15μm以下,接著劑層3的薄型化成為可能。 The average particle diameter of the spherical alumina filler is preferably 0.3 μm or more, and more preferably 0.5 μm or more. When the pass is 0.3 μm or more, the unevenness followability at a high temperature can be obtained, and high filling is possible. Further, the average particle diameter of the spherical alumina filler is preferably 15 μm or less, more preferably 10 μm or less. When it is 15 μm or less, the thickness of the adhesive layer 3 is made possible.

球狀氧化鋁填料的平均粒徑為利用例如分光光度式的細微性分佈計(HORIBA製造,裝置名:LA-910)求出的值。 The average particle diameter of the spherical alumina filler is a value obtained by, for example, a spectrophotometric fine particle size distribution meter (manufactured by HORIBA, device name: LA-910).

球狀氧化鋁填料的最大粒徑較佳為40μm以下。為40μm以下時,能夠應對薄型化。接著劑層3的厚度要求 逐年薄型化,40um以下成為主流,粒徑更大的填料是不合適的。 The maximum particle diameter of the spherical alumina filler is preferably 40 μm or less. When the thickness is 40 μm or less, it is possible to cope with the reduction in thickness. Thickness of the layer 3 Thinning year by year, 40um or less has become the mainstream, and fillers with larger particle diameters are not suitable.

球狀氧化鋁填料較佳用矽烷偶合劑進行了處理(前處理)。由此,球狀氧化鋁填料的分散性變得良好,球狀氧化鋁填料的高度填充化成為可能。 The spherical alumina filler is preferably treated with a decane coupling agent (pretreatment). Thereby, the dispersibility of the spherical alumina filler becomes good, and the filling of the spherical alumina filler is possible.

矽烷偶合劑是分子中具有水解性基團和有機官能團的化合物。 The decane coupling agent is a compound having a hydrolyzable group and an organic functional group in the molecule.

作為水解性基團,例如可列舉出甲氧基、乙氧基等碳數1~6的烷氧基、乙醯氧基、2-甲氧基乙氧基等。其中,從水解速度快、可良好地進行矽烷偶聯處理的理由出發,較佳甲氧基。 The hydrolyzable group may, for example, be an alkoxy group having 1 to 6 carbon atoms such as a methoxy group or an ethoxy group, an ethoxylated group or a 2-methoxyethoxy group. Among them, a methoxy group is preferred because of its high hydrolysis rate and good decane coupling treatment.

作為有機官能團,可列舉出乙烯基、環氧基、苯乙烯基、甲基丙烯醯基、丙烯醯基、胺基、脲基、巰基、硫醚基、異氰酸酯基等。其中,從可提高球狀氧化鋁填料的分散性,並且可提高接著劑層3的流動性的理由出發,較佳環氧基、甲基丙烯醯基。 Examples of the organic functional group include a vinyl group, an epoxy group, a styryl group, a methacryloyl group, an acryl group, an amine group, a urea group, a decyl group, a thioether group, and an isocyanate group. Among these, an epoxy group and a methacryl oxime group are preferable because the dispersibility of the spherical alumina filler can be improved and the fluidity of the adhesive layer 3 can be improved.

作為矽烷偶合劑,例如可列舉出乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷等含乙烯基矽烷偶合劑;2-(3,4-環氧環己基)乙基三甲氧基矽烷、3-環氧丙氧基丙基甲基二甲氧基矽烷、3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基甲基二乙氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷等含環氧基矽烷偶合劑(環氧矽烷系矽烷偶合劑);對苯乙烯基三甲氧基矽烷等含苯乙烯基矽烷偶合劑;3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、3-甲基丙 烯醯氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二乙氧基矽烷、3-甲基丙烯醯氧基丙基三乙氧基矽烷等含甲基丙烯醯基矽烷偶合劑(甲基丙烯醯基矽烷系矽烷偶合劑);3-丙烯醯氧基丙基三甲氧基矽烷等含丙烯醯基矽烷偶合劑;N-2-(胺基乙基)-3-胺基丙基甲基二甲氧基矽烷、N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷、3-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、3-三乙氧基甲矽烷基-N-(1,3-二甲基-亞丁基)丙基胺、N-苯基-3-胺基丙基三甲氧基矽烷、N-(乙烯基苄基)-2-胺基乙基-3-胺基丙基三甲氧基矽烷等含胺基矽烷偶合劑;3-脲基丙基三乙氧基矽烷等含脲基矽烷偶合劑;3-巰基丙基甲基二甲氧基矽烷、3-巰基丙基三甲氧基矽烷等含巰基矽烷偶合劑;雙(三乙氧基甲矽烷基丙基)四硫化物等含硫醚基矽烷偶合劑;3-異氰酸酯丙基三乙氧基矽烷等含異氰酸酯基矽烷偶合劑等。 Examples of the decane coupling agent include vinyl-containing decane coupling agents such as vinyl trimethoxy decane and vinyl triethoxy decane; and 2-(3,4-epoxycyclohexyl)ethyltrimethoxy decane. 3-glycidoxypropylmethyldimethoxydecane, 3-glycidoxypropyltrimethoxydecane, 3-glycidoxypropylmethyldiethoxydecane, 3- An epoxy group-containing decane coupling agent such as glycidoxypropyltriethoxydecane (epoxydecane-based decane coupling agent); a styrene-based decane coupling agent such as p-styryltrimethoxydecane; Acryloxypropylmethyldimethoxydecane, 3-methylpropane Methyl propylene oxime such as ethenyloxypropyltrimethoxydecane, 3-methylpropenyloxypropylmethyldiethoxydecane, 3-methylpropenyloxypropyltriethoxydecane a phthalic acid coupling agent (methacryl decyl decane decane coupling agent); an acrylonitrile-based decane coupling agent such as 3-propenyl methoxypropyltrimethoxy decane; N-2-(aminoethyl)-3 -Aminopropylmethyldimethoxydecane, N-2-(aminoethyl)-3-aminopropyltrimethoxydecane, 3-aminopropyltrimethoxydecane, 3-amino Propyltriethoxydecane, 3-triethoxymethylidene-N-(1,3-dimethyl-butylene)propylamine, N-phenyl-3-aminopropyltrimethoxy Amine-containing decane coupling agent such as decane, N-(vinylbenzyl)-2-aminoethyl-3-aminopropyltrimethoxydecane; urea-containing such as 3-ureidopropyltriethoxydecane a decane-based coupling agent; a mercapto-decane-containing coupling agent such as 3-mercaptopropylmethyldimethoxydecane or 3-mercaptopropyltrimethoxydecane; bis(triethoxycarbamidopropyl)tetrasulfide Sulfonyl ether-containing decane coupling agent; isocyanate group such as 3-isocyanate propyl triethoxy decane A decane coupling agent or the like.

作為用矽烷偶合劑處理球狀氧化鋁填料的方法,沒有特別限定,可列舉出:在溶劑中將球狀氧化鋁填料與矽烷偶合劑混合的濕式法;在氣相中將球狀氧化鋁填料用矽烷偶合劑進行處理的幹式法等。 The method for treating the spherical alumina filler with a decane coupling agent is not particularly limited, and examples thereof include a wet method in which a spherical alumina filler and a decane coupling agent are mixed in a solvent; and a spherical alumina in a gas phase; A dry method in which a filler is treated with a decane coupling agent or the like.

對矽烷偶合劑的處理量沒有特別限定,相對於100重量份球狀氧化鋁填料,較佳用0.05~5重量份矽烷偶合劑進行處理。 The treatment amount of the decane coupling agent is not particularly limited, and it is preferably treated with 0.05 to 5 parts by weight of a decane coupling agent per 100 parts by weight of the spherical alumina filler.

接著劑層3中的球狀氧化鋁填料的含量較佳為60重量%以上、更佳為70重量%以上、又更佳為75重量%以 上。為60重量%以上時,能夠良好地研磨切割刀片,能夠防止鋒利度的降低。接著劑層3中的球狀氧化鋁填料的含量較佳為90重量%以下、更佳為88重量%以下。為90重量%以下時,能夠防止切割刀片的壽命變得過短。 The content of the spherical alumina filler in the layer 3 is preferably 60% by weight or more, more preferably 70% by weight or more, still more preferably 75% by weight. on. When it is 60% by weight or more, the dicing blade can be satisfactorily polished, and the reduction in sharpness can be prevented. The content of the spherical alumina filler in the layer 3 is preferably 90% by weight or less, more preferably 88% by weight or less. When it is 90% by weight or less, the life of the dicing blade can be prevented from becoming too short.

接著劑層3除前述成分以外還可以適宜地含有接著劑層的製造中常用的配混劑,例如交聯劑等。 The subsequent layer 3 may suitably contain, in addition to the above components, a compounding agent commonly used in the production of an adhesive layer, such as a crosslinking agent.

對接著劑層3的製造方法沒有特別限定,較佳包括如下步驟的方法:製作含有前述各成分(例如,熱塑性樹脂、熱固化性樹脂和球狀氧化鋁填料)的接著劑組合物溶液的步驟;過濾接著劑組合物溶液,得到濾液的步驟;以及,將濾液塗布到基材隔離膜上而形成塗布膜後,將塗布膜乾燥的步驟。 The method for producing the adhesive layer 3 is not particularly limited, and preferably includes a method of preparing a solution of an adhesive composition containing the above respective components (for example, a thermoplastic resin, a thermosetting resin, and a spherical alumina filler). And a step of filtering the adhesive composition solution to obtain a filtrate; and drying the coating film after applying the filtrate to the substrate separator to form a coating film.

作為接著劑組合物溶液中使用的溶劑,沒有特別限定,較佳能夠將前述各成分均勻溶解、混煉或分散的有機溶劑。例如,可列舉出二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯烷酮、丙酮、甲乙酮、環己酮等酮系溶劑、甲苯、二甲苯等。 The solvent to be used in the adhesive composition solution is not particularly limited, and an organic solvent capable of uniformly dissolving, kneading or dispersing the above components is preferable. For example, a ketone solvent such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone or cyclohexanone, toluene or xylene may be mentioned.

過濾中使用的過濾材料的網眼較佳為50μm以下。由此,能夠使球狀氧化鋁填料的最大粒徑為50μm以下,能夠抑制氧化鋁填料的聚集物混入到接著劑層3中。 The mesh of the filter material used in the filtration is preferably 50 μm or less. Thereby, the maximum particle diameter of the spherical alumina filler can be 50 μm or less, and aggregation of the aggregate of the alumina filler can be suppressed from entering the adhesive layer 3.

作為基材隔離膜,可以使用聚對苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯、用氟系剝離劑、長鏈烷基丙烯酸酯系剝離劑等剝離劑進行了表面塗布的塑膠薄膜或紙等。作為接著劑組合物溶液的塗布方法,例如可列舉出輥 塗、絲網塗覆、凹版塗覆等。另外,對塗布膜的乾燥條件沒有特別限定,例如可以在乾燥溫度70~160℃、乾燥時間1~5分鐘下進行。 As the substrate separator, surface coating can be carried out using a polyethylene terephthalate (PET), polyethylene, polypropylene, a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate release agent. Plastic film or paper. As a coating method of the adhesive composition solution, for example, a roller can be mentioned Coating, screen coating, gravure coating, and the like. Further, the drying conditions of the coating film are not particularly limited, and for example, it can be carried out at a drying temperature of 70 to 160 ° C and a drying time of 1 to 5 minutes.

對接著劑層3的厚度沒有特別限定,較佳為5μm以上。為5μm以上時,能夠抑制切割刀片的鋒利度的降低。另外,接著劑層3的厚度較佳為100μm以下、更佳為50μm以下。為100μm以下時,能夠防止切割刀片的壽命變得過短。 The thickness of the adhesive layer 3 is not particularly limited, but is preferably 5 μm or more. When it is 5 μm or more, the reduction in the sharpness of the dicing blade can be suppressed. Further, the thickness of the adhesive layer 3 is preferably 100 μm or less, and more preferably 50 μm or less. When it is 100 μm or less, the life of the dicing blade can be prevented from becoming too short.

(基材1) (Substrate 1)

基材1作為切割‧晶粒接合薄膜10的強度母體。作為基材1,例如可列舉出低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴、乙烯-乙酸乙烯酯共聚物、多離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨酯、聚對苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯等聚酯、聚碳酸酯、聚醯亞胺、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚苯硫醚、芳綸(紙)、玻璃、玻璃布、氟樹脂、聚氯乙烯、聚偏二氯乙烯、纖維素系樹脂、有機矽樹脂、金屬(箔)、紙等。其中,聚乙烯、聚丙烯等由於吸水率小,故而作為基材1是較佳的。 The substrate 1 serves as a strength matrix for the dicing die-bonding film 10. Examples of the substrate 1 include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, and homopolymerization. Polyolefins such as polypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer, multiionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (none Copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate, polyester, polycarbonate, poly Yttrium, polyetheretherketone, polyimine, polyetherimide, polyamine, wholly aromatic polyamine, polyphenylene sulfide, aramid (paper), glass, glass cloth, fluororesin, Polyvinyl chloride, polyvinylidene chloride, cellulose resin, organic resin, metal (foil), paper, and the like. Among them, polyethylene, polypropylene, and the like are preferable as the substrate 1 because of a small water absorption rate.

基材1的表面可以為了提高與鄰接的層的密合性、保持性等而實施常用的表面處理,例如鉻酸處理、臭氧曝露、火焰曝露、高壓電擊曝露、離子化輻射線處理等化學或物理的處理、利用底塗劑(例如後述黏著物質)的塗布處理。 The surface of the substrate 1 may be subjected to a common surface treatment for improving adhesion to adjacent layers, retention, and the like, such as chromic acid treatment, ozone exposure, flame exposure, high voltage electric shock exposure, ionizing radiation treatment, or the like. Physical treatment, coating treatment using a primer (for example, an adhesive described later).

基材1可以適當選擇使用同種或不同種的材料,根據需要可以使用將多種物質共混而成的材料。 As the substrate 1, a material of the same kind or different kinds can be appropriately selected, and a material obtained by blending a plurality of substances can be used as needed.

對基材1的厚度沒有特別限制,可以適當確定,通常為60~150μm左右。 The thickness of the substrate 1 is not particularly limited and can be appropriately determined, and is usually about 60 to 150 μm.

(黏著劑層2) (adhesive layer 2)

作為構成黏著劑層2的黏著劑,從忌諱半導體晶圓或玻璃等的污染的電子部件的利用超純水、醇等有機溶劑的清潔清洗性等的觀點出發,較佳以丙烯酸類聚合物為基礎聚合物的丙烯酸類黏著劑。 As the adhesive constituting the adhesive layer 2, it is preferable to use an acrylic polymer from the viewpoint of cleaning and cleaning properties of an organic solvent such as ultrapure water or alcohol from a contaminated electronic component such as a semiconductor wafer or glass. Acrylic adhesive for base polymers.

作為前述丙烯酸類聚合物,例如可列舉出使用(甲基)丙烯酸烷基酯(例如,甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、仲丁酯、叔丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等烷基的碳數1~30、特別是碳數4~18的直鏈狀或支鏈狀的烷基酯等)和(甲基)丙烯酸環烷基酯(例如,環戊酯、環己酯等)中的1種或2種以上作為單體成分的丙烯酸類聚合物等。 需要說明的是,(甲基)丙烯酸酯是指丙烯酸酯和/或甲基丙烯酸酯,本發明的(甲基)全部都是指同樣的含義。 As the acrylic polymer, for example, an alkyl (meth)acrylate (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, sec-butyl ester, tert-butyl ester) can be used. , amyl ester, isoamyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, decyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, An alkyl group such as a tridecyl ester, a tetradecyl ester, a hexadecyl ester, an octadecyl ester or an eicosyl ester having a carbon number of 1 to 30, particularly a linear chain having 4 to 18 carbon atoms One or two or more kinds of acrylic polymers such as a branched alkyl ester (such as a branched alkyl ester) and a cycloalkyl (meth)acrylate (for example, a cyclopentyl ester or a cyclohexyl ester). . In addition, (meth)acrylate means an acrylate and/or a methacrylate, and all (meth) of this invention means the same meaning.

前述丙烯酸類聚合物出於內聚力、耐熱性等的改善的目的,也可以根據需要包含與能跟前述(甲基)丙烯酸烷基酯或環烷基酯共聚的其它單體成分相對應的單元。作為這種單體成分,例如可列舉出:丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧乙酯、(甲基)丙烯酸羧戊酯、衣康酸、馬來酸、富馬酸、巴豆酸等含羧基單體;馬來酸酐、衣康酸酐等酸酐單體;(甲基)丙烯酸2-羥乙酯、(甲基)丙烯酸2-羥丙酯、(甲基)丙烯酸4-羥丁酯、(甲基)丙烯酸6-羥己酯、(甲基)丙烯酸8-羥辛酯、(甲基)丙烯酸10-羥癸酯、(甲基)丙烯酸12-羥基月桂酯、(甲基)丙烯酸(4-羥基甲基環己基)甲酯等含羥基單體;苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺基丙酯、(甲基)丙烯醯氧基萘磺酸等含磺酸基單體;2-羥乙基丙烯醯基磷酸酯等含磷酸基單體;丙烯醯胺、丙烯腈等。這些能共聚的單體成分可以使用1種或2種以上。這些能共聚的單體的用量較佳為全部單體成分的40重量%以下。 The acrylic polymer may contain a unit corresponding to another monomer component copolymerizable with the alkyl (meth)acrylate or the cycloalkyl ester as needed for the purpose of improving cohesive force, heat resistance and the like. Examples of such a monomer component include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. And other carboxyl group-containing monomers; anhydride monomers such as maleic anhydride and itaconic anhydride; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate , 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (meth)acrylic acid a hydroxyl group-containing monomer such as (4-hydroxymethylcyclohexyl)methyl ester; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)acrylamido-2-methylpropanesulfonic acid, (methyl) a sulfonic acid group-containing monomer such as acrylamide propanesulfonic acid, sulfopropyl (meth)acrylate, (meth)acryloxynaphthalenesulfonic acid or the like; a phosphate group containing 2-hydroxyethyl acryloyl phosphate Monomer; acrylamide, acrylonitrile, and the like. These monomer components which can be copolymerized may be used alone or in combination of two or more. The amount of these copolymerizable monomers is preferably 40% by weight or less based on the total of the monomer components.

進而,前述丙烯酸類聚合物也可以為了進行交聯而根據需要包含多官能性單體等作為共聚用單體成分。作為這種多官能性單體,例如可列舉出己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二 (甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、胺基甲酸酯(甲基)丙烯酸酯等。這些多官能性單體也可以使用1種或2種以上。多官能性單體的用量從黏著特性等的觀點出發較佳為全部單體成分的30重量%以下。 Further, the acrylic polymer may contain a polyfunctional monomer or the like as a monomer component for copolymerization, if necessary, for crosslinking. Examples of such a polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, and (poly)propylene glycol II. (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, Dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) acrylate, and the like. These polyfunctional monomers may be used alone or in combination of two or more. The amount of the polyfunctional monomer to be used is preferably 30% by weight or less based on the total of the monomer components from the viewpoint of adhesion characteristics and the like.

前述丙烯酸類聚合物的製備例如可以對1種或2種以上的成分單體的混合物應用溶液聚合方式、乳液聚合方式、本體聚合方式、懸浮聚合方式等適當的方式來進行。黏著劑層2從防止晶圓污染等觀點出發較佳為抑制了低分子量物質的含有的組成,從上述觀點出發,較佳將重量平均分子量為30萬以上、特別是40萬~300萬的丙烯酸類聚合物作為主要成分,因此也可以使黏著劑為基於內部交聯方式、外部交聯方式等的適宜的交聯類型。 The preparation of the acrylic polymer can be carried out, for example, by using a suitable method such as a solution polymerization method, an emulsion polymerization method, a bulk polymerization method or a suspension polymerization method for a mixture of one or more kinds of component monomers. The adhesive layer 2 is preferably a composition that suppresses the inclusion of a low molecular weight substance from the viewpoint of preventing wafer contamination. From the above viewpoint, it is preferred to use an acrylic acid having a weight average molecular weight of 300,000 or more, particularly 400,000 to 3,000,000. Since the polymer is a main component, the adhesive can also be a suitable crosslinking type based on an internal crosslinking method, an external crosslinking method, or the like.

另外,為了控制黏著劑層2的交聯密度,例如可以採用:使用多官能異氰酸酯系化合物、多官能環氧系化合物、三聚氰胺系化合物、金屬鹽系化合物、金屬螯合物系化合物、胺基樹脂系化合物、或過氧化物等適當的外部交聯劑來進行交聯處理的方式;混合具有2個以上碳碳雙鍵的低分子化合物並利用能量射線的照射等進行交聯處理的方式等適宜的方式。使用外部交聯劑時,其用量通過與要進行交聯的基礎聚合物的平衡、進而作為黏著劑的使用用 途而適當確定。通常,相對於100重量份前述基礎聚合物,較佳配混5重量份左右以下、又更佳配混0.1~5重量份。此外,黏著劑中,根據需要,除了前述成分之外,也可以使用各種增黏劑、抗老劑等添加劑。 Further, in order to control the crosslinking density of the adhesive layer 2, for example, a polyfunctional isocyanate compound, a polyfunctional epoxy compound, a melamine compound, a metal salt compound, a metal chelate compound, or an amine resin can be used. A method of crosslinking treatment by a suitable external crosslinking agent such as a compound or a peroxide; and a method of mixing a low molecular compound having two or more carbon-carbon double bonds and performing crosslinking treatment by irradiation with energy rays or the like The way. When an external crosslinking agent is used, the amount thereof is balanced by the base polymer to be crosslinked, and further used as an adhesive. Determined appropriately on the way. In general, it is preferably blended in an amount of about 5 parts by weight or less, more preferably 0.1 to 5 parts by weight, per 100 parts by weight of the base polymer. Further, in the adhesive, various additives such as a tackifier or an anti-aging agent may be used in addition to the above-mentioned components as needed.

作為構成黏著劑層2的黏著劑,輻射線固化型黏著劑是合適的。作為輻射線固化型黏著劑,可例示出在前述黏著劑中配混輻射線固化性的單體成分、輻射線固化性的低聚物成分而成的添加型的輻射線固化型黏著劑。 As the adhesive constituting the adhesive layer 2, a radiation-curable adhesive is suitable. As the radiation-curable adhesive, an addition type radiation-curable adhesive in which a radiation-curable monomer component and a radiation-curable oligomer component are blended in the above-mentioned adhesive can be exemplified.

作為所配混的輻射線固化性的單體成分,例如可列舉出胺基甲酸酯(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。這些單體成分可以組合使用1種或2種以上。 Examples of the radiation-curable monomer component to be blended include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, and tetramethylol methane tetra ( Methyl) acrylate, pentaerythritol tri(meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxy penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4- Butanediol di(meth)acrylate and the like. These monomer components may be used alone or in combination of two or more.

另外,輻射線固化性的低聚物成分可列舉出聚氨酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種低聚物,其分子量為100~30000左右的範圍是適當的。輻射線固化性的單體成分、低聚物成分的配混量可以根據前述黏著劑層的種類適當確定能夠降低黏著劑層的黏著力的量。通常,相對於構成黏著劑的丙烯酸類聚合物等基礎聚合物100重量份,例如為5重量份~500重量份、較佳為70重量份~150重量份左右。 In addition, examples of the radiation curable oligomer component include various oligomers such as a urethane type, a polyether type, a polyester type, a polycarbonate type, and a polybutadiene type, and the molecular weight thereof is in the range of about 100 to 30,000. It is appropriate. The amount of the radiation-curable monomer component and the oligomer component can be appropriately determined according to the type of the pressure-sensitive adhesive layer to reduce the adhesion of the pressure-sensitive adhesive layer. In general, it is, for example, 5 parts by weight to 500 parts by weight, preferably about 70 parts by weight to 150 parts by weight, per 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

另外,作為輻射線固化型黏著劑,除了前述添加型的 輻射線固化型黏著劑之外,還可列舉出:使用在聚合物側鏈或主鏈中或者主鏈末端具有碳碳雙鍵的物質作為基礎聚合物的內在型的輻射線固化型黏著劑。內在型的輻射線固化型黏著劑不需要含有作為低分子成分的低聚物成分等或含有得不多,因此低聚物成分等不會經時地在黏著劑中移動,能夠形成穩定的層結構的黏著劑層,故而較佳。 In addition, as the radiation curing type adhesive, in addition to the aforementioned additive type In addition to the radiation-curable adhesive, an intrinsic radiation-curable adhesive using a substance having a carbon-carbon double bond in a polymer side chain or a main chain or a main chain terminal as a base polymer may be mentioned. The intrinsic type radiation-curable adhesive does not need to contain an oligomer component or the like as a low molecular component, and therefore does not contain much, so that an oligomer component or the like does not move over time in the adhesive, and a stable layer can be formed. The structure of the adhesive layer is preferred.

前述具有碳碳雙鍵的基礎聚合物可以沒有特別限制地使用具有碳碳雙鍵且具有黏著性的物質。作為這種基礎聚合物,較佳以丙烯酸類聚合物為基本骨架的聚合物。作為丙烯酸類聚合物的基本骨架,可列舉出前述例示的丙烯酸類聚合物。 The aforementioned base polymer having a carbon-carbon double bond can be used without any particular limitation, and has a carbon-carbon double bond and has an adhesive property. As such a base polymer, a polymer having an acrylic polymer as a basic skeleton is preferred. The basic skeleton of the acrylic polymer may, for example, be an acrylic polymer exemplified above.

對向前述丙烯酸類聚合物中導入碳碳雙鍵的方法沒有特別限制,可以採用各種方法,碳碳雙鍵從聚合物側鏈導入時,在分子設計上容易。例如,可列舉出如下的方法:預先使丙烯酸類聚合物與具有官能團的單體共聚,然後將具有能與該官能團反應的官能團和碳碳雙鍵的化合物在維持碳碳雙鍵的輻射線固化性的狀態下進行縮合或加成反應。 The method of introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be employed. When a carbon-carbon double bond is introduced from a polymer side chain, molecular design is easy. For example, a method of copolymerizing an acrylic polymer with a monomer having a functional group, and then a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond in the radiation curing of the carbon-carbon double bond can be exemplified. The condensation or addition reaction is carried out in a sexual state.

作為這些官能團的組合的例子,可列舉出羧酸基和環氧基、羧酸基和氮丙啶基、羥基和異氰酸酯基等。這些官能團的組合當中,從反應追蹤的容易性出發,羥基和異氰酸酯基的組合是適宜的。另外,只要是能利用這些官能團的組合生成前述具有碳碳雙鍵的丙烯酸類聚合物那樣的組合,則官能團可以位於丙烯酸類聚合物和前述化合物中的 任意側,在前述較佳的組合中,丙烯酸類聚合物具有羥基、前述化合物具有異氰酸酯基的情況是適宜的。此時,作為具有碳碳雙鍵的異氰酸酯化合物,例如可列舉出甲基丙烯醯基異氰酸酯、2-甲基丙烯醯氧基乙基異氰酸酯、間異丙烯基-α,α-二甲基苄基異氰酸酯等。另外,作為丙烯酸類聚合物,可以使用將前述例示的含羥基單體、2-羥乙基乙烯基醚、4-羥丁基乙烯基醚、二乙二醇單乙烯基醚這樣的醚系化合物等共聚而成的物質。 Examples of the combination of these functional groups include a carboxylic acid group and an epoxy group, a carboxylic acid group and an aziridine group, a hydroxyl group, an isocyanate group, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is suitable from the viewpoint of ease of reaction tracking. Further, as long as it is a combination capable of producing an acrylic polymer having a carbon-carbon double bond by a combination of these functional groups, the functional group may be located on either side of the acrylic polymer and the above-mentioned compound, and in the above preferred combination, The case where the acrylic polymer has a hydroxyl group and the above compound has an isocyanate group is suitable. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryl oxime isocyanate, 2-methacryloxyethyl isocyanate, m-isopropenyl- α , α -dimethylbenzyl. Isocyanate, etc. Further, as the acrylic polymer, an ether compound such as the above-exemplified hydroxyl group-containing monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether can be used. A substance obtained by copolymerization.

前述內在型的輻射線固化型黏著劑可以單獨使用前述具有碳碳雙鍵的基礎聚合物(特別是丙烯酸類聚合物),也可以以不使特性惡化的水準配混前述輻射線固化性的單體成分、低聚物成分等光聚合性化合物。該光聚合性化合物的配混量相對於100重量份基礎聚合物,通常為30重量份以下的範圍內,較佳為0~10重量份的範圍內。 The above-mentioned intrinsic radiation-curable adhesive may be used alone as the base polymer (especially an acrylic polymer) having a carbon-carbon double bond, or may be blended with the radiation-curable single sheet at a level that does not deteriorate the properties. A photopolymerizable compound such as a body component or an oligomer component. The compounding amount of the photopolymerizable compound is usually in the range of 30 parts by weight or less, preferably 0 to 10 parts by weight, per 100 parts by weight of the base polymer.

較佳的是,前述輻射線固化型黏著劑中,在利用紫外線等進行固化的情況下含有光聚合引發劑。 It is preferable that the radiation-curable adhesive contains a photopolymerization initiator when it is cured by ultraviolet rays or the like.

作為構成黏著劑層2的黏著劑,可以特別適宜地使用日本特開2010-129701號公報中記載的活性能量射線固化型黏著劑。前述活性能量射線固化型黏著劑包含下述丙烯酸類聚合物A。 As the adhesive constituting the adhesive layer 2, the active energy ray-curable adhesive described in JP-A-2010-129701 can be suitably used. The active energy ray-curable adhesive contains the following acrylic polymer A.

丙烯酸類聚合物A:為具有如下結構的丙烯酸類聚合物,使由包含50重量%以上的CH2=CHCOOR(式中,R是碳數為6~10的烷基)所示的丙烯酸酯和10重量%~30重量%的含羥基單體、且不含有含羧基單體的單體組合物 得到的聚合物、與相對於含羥基單體為50mol%~95mol%的具有自由基反應性碳碳雙鍵的異氰酸酯化合物進行加成反應而成的結構。 Acrylic polymer A: an acrylic polymer having a structure in which an acrylate represented by 50% by weight or more of CH 2 =CHCOOR (wherein R is an alkyl group having 6 to 10 carbon atoms) and a polymer obtained by using a monomer composition containing 10% by weight to 30% by weight of a hydroxyl group-containing monomer and containing no carboxyl group-containing monomer, and 50% to 95% by mole of a radical-reactive carbon relative to the hydroxyl group-containing monomer A structure in which an isocyanate compound having a carbon double bond is subjected to an addition reaction.

丙烯酸類聚合物A中,使用CH2=CHCOOR(式中,R為碳數6~10的烷基)所示的丙烯酸烷基酯(有時稱為“丙烯酸C6-10烷基酯”)。丙烯酸烷基酯的烷基的碳數不足6時,有時剝離力過大而拾取性降低。另一方面,丙烯酸烷基酯的烷基的碳數超過10時,與接著劑層3的接著性或密合性降低,其結果,有時在切割時發生晶片飛散。作為丙烯酸C6-10烷基酯,特別較佳烷基的碳數為8~9的丙烯酸烷基酯,其中,丙烯酸2-乙基己酯、丙烯酸異辛酯最佳。 In the acrylic polymer A, an alkyl acrylate (hereinafter sometimes referred to as "C6-10 alkyl acrylate") represented by CH 2 =CHCOOR (wherein R is an alkyl group having 6 to 10 carbon atoms) is used. When the carbon number of the alkyl group of the alkyl acrylate is less than 6, the peeling force may be too large and the pick-up property may fall. On the other hand, when the carbon number of the alkyl group of the alkyl acrylate exceeds 10, the adhesion or adhesion to the adhesive layer 3 is lowered, and as a result, wafer scattering may occur at the time of dicing. As the C6-10 alkyl acrylate, an alkyl acrylate having an alkyl group having a carbon number of 8 to 9 is particularly preferable, and 2-ethylhexyl acrylate and isooctyl acrylate are preferred.

作為丙烯酸C6-10烷基酯,其含量相對於單體成分總量,較佳為50重量%(wt%)以上、又更佳為70wt%~90wt%。丙烯酸C6-10烷基酯的含量相對於單體成分總量不足50wt%時,有時剝離力變得過大而拾取性降低。 The content of the C6-10 alkyl acrylate is preferably 50% by weight or more, and more preferably 70% by weight to 90% by weight based on the total amount of the monomer components. When the content of the C6-10 alkyl acrylate is less than 50% by weight based on the total amount of the monomer components, the peeling force may become excessively large and the pickup property may be lowered.

含羥基單體的含量相對於單體成分總量,較佳為10wt%~30wt%的範圍內、更佳為15wt%~25wt%的範圍內。含羥基單體的含量相對於單體成分總量不足10wt%時,活性能量射線照射後的交聯不足,有時產生拾取性的降低,對帶接著劑層3的半導體晶片產生殘膠。另一方面,含羥基單體的含量相對於單體成分總量超過30wt%時,黏著劑的極性變高,與接著劑層3的相互作用變高, 因而拾取性降低。 The content of the hydroxyl group-containing monomer is preferably in the range of 10% by weight to 30% by weight, more preferably 15% by weight to 25% by weight based on the total amount of the monomer components. When the content of the hydroxyl group-containing monomer is less than 10% by weight based on the total amount of the monomer components, crosslinking after the active energy ray irradiation is insufficient, and pick-up property may be lowered, and residual glue may be generated on the semiconductor wafer with the adhesive layer 3. On the other hand, when the content of the hydroxyl group-containing monomer exceeds 30% by weight based on the total amount of the monomer components, the polarity of the adhesive becomes high, and the interaction with the adhesive layer 3 becomes high. Therefore, the pickup property is lowered.

丙烯酸類聚合物A也可以根據需要包含與其它單體成分相對應的單元。 The acrylic polymer A may also contain units corresponding to other monomer components as needed.

丙烯酸類聚合物A中,使用具有自由基反應性碳碳雙鍵的異氰酸酯化合物(有時稱為“含雙鍵異氰酸酯化合物”)。即,丙烯酸類聚合物較佳具有使由前述丙烯酸酯、含羥基單體等單體組合物得到的聚合物與含雙鍵異氰酸酯化合物進行加成反應而成的結構。因此,丙烯酸類聚合物較佳在其分子結構內具有自由基反應性碳碳雙鍵。由此,能夠製成利用活性能量射線(紫外線等)的照射進行固化的活性能量射線固化型黏著劑層(紫外線固化型黏著劑層等),能夠降低接著劑層3與黏著劑層2的剝離力。 In the acrylic polymer A, an isocyanate compound having a radical-reactive carbon-carbon double bond (sometimes referred to as a "double-bonded isocyanate-containing compound") is used. That is, the acrylic polymer preferably has a structure in which a polymer obtained from a monomer composition such as the above acrylate or a hydroxyl group-containing monomer is subjected to an addition reaction with a double bond-containing isocyanate compound. Therefore, the acrylic polymer preferably has a radical-reactive carbon-carbon double bond in its molecular structure. Thereby, an active energy ray-curable adhesive layer (such as an ultraviolet curable adhesive layer) which is cured by irradiation with an active energy ray (such as ultraviolet rays) can be obtained, and peeling of the adhesive layer 3 and the adhesive layer 2 can be reduced. force.

作為含雙鍵異氰酸酯化合物,例如可列舉出甲基丙烯醯基異氰酸酯、丙烯醯基異氰酸酯、2-甲基丙烯醯氧基乙基異氰酸酯、2-丙烯醯氧基乙基異氰酸酯、間異丙烯基-α,α-二甲基苄基異氰酸酯等。含雙鍵異氰酸酯化合物可以單獨或組合2種以上使用。 Examples of the double bond-containing isocyanate compound include methacryl oxime isocyanate, propylene decyl isocyanate, 2-methyl propylene methoxyethyl isocyanate, 2-propenyl methoxyethyl isocyanate, and m-isopropenyl group. α,α-dimethylbenzyl isocyanate or the like. The double bond-containing isocyanate compound may be used singly or in combination of two or more.

含雙鍵異氰酸酯化合物的用量相對於含羥基單體,較佳為50mol%~95mol%的範圍內、更佳為75mol%~90mol%的範圍內。含雙鍵異氰酸酯化合物的用量相對於含羥基單體不足50mol%時,活性能量射線照射後的交聯不足,有時產生拾取性的降低、對帶接著劑層3的半導體晶片的殘膠。 The amount of the double bond-containing isocyanate compound to be used is preferably in the range of 50 mol% to 95 mol%, more preferably 75 mol% to 90 mol%, based on the hydroxyl group-containing monomer. When the amount of the double bond-containing isocyanate compound is less than 50% by mole based on the hydroxyl group-containing monomer, the crosslinking after the active energy ray irradiation is insufficient, and the pickup property may be lowered to cause a residue on the semiconductor wafer with the adhesive layer 3.

另外,活性能量射線固化型黏著劑中,為了調整活性 能量射線照射前的黏著力、活性能量射線照射後的黏著力,也可以適當使用外部交聯劑。作為外部交聯方法的具體的手段,可列舉出添加多異氰酸酯化合物、環氧化合物、氮丙啶化合物、三聚氰胺系交聯劑等所謂交聯劑使其反應的方法。使用外部交聯劑時,其用量根據與要進行交聯的基礎聚合物的平衡、進而作為黏著劑的使用用途而適當確定。外部交聯劑的用量相對於100重量份前述基礎聚合物,通常為20重量份以下(較佳為0.1重量份~10重量份)。進而,活性能量射線固化型黏著劑中,根據需要,除了前述成分之外,也可以配混現有公知的各種增黏劑、抗老劑、發泡劑等添加劑。 In addition, in the active energy ray-curable adhesive, in order to adjust the activity The external cross-linking agent can also be suitably used for the adhesive force before the irradiation of the energy ray and the adhesive force after the irradiation of the active energy ray. Specific examples of the external crosslinking method include a method in which a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine-based crosslinking agent is added and reacted. When an external crosslinking agent is used, the amount thereof is appropriately determined depending on the balance with the base polymer to be crosslinked, and further as the use of the adhesive. The amount of the external crosslinking agent is usually 20 parts by weight or less (preferably 0.1 parts by weight to 10 parts by weight) based on 100 parts by weight of the above base polymer. Further, in the active energy ray-curable pressure-sensitive adhesive, additives such as various conventionally known various tackifiers, anti-aging agents, and foaming agents may be blended as needed in addition to the above-mentioned components.

對黏著劑層2的厚度沒有特別限制,可以適當確定,通常為5~200μm左右。 The thickness of the adhesive layer 2 is not particularly limited and can be appropriately determined, and is usually about 5 to 200 μm.

(接著劑層3的厚度/基材1和黏著劑層2的總厚度) (Thickness of the adhesive layer 3 / total thickness of the substrate 1 and the adhesive layer 2)

接著劑層3的厚度/基材1和黏著劑層2的總厚度較佳為0.045以上、更佳為0.05以上。為0.045以上時,可得到切割刀片的研磨(整飾)效果,能夠抑制切割刀片的鋒利度的降低。接著劑層3的厚度/基材1和黏著劑層2的總厚度較佳為0.9以下、更佳為0.45以下、又更佳為0.3以下。為0.9以下時,能夠防止切割刀片的壽命變得過短。 The thickness of the subsequent agent layer 3 / the total thickness of the substrate 1 and the adhesive layer 2 is preferably 0.045 or more, more preferably 0.05 or more. When it is 0.045 or more, the grinding (finishing) effect of the cutting blade can be obtained, and the reduction of the sharpness of the cutting blade can be suppressed. The thickness of the subsequent agent layer 3 / the total thickness of the substrate 1 and the adhesive layer 2 is preferably 0.9 or less, more preferably 0.45 or less, still more preferably 0.3 or less. When it is 0.9 or less, the life of a dicing blade can be prevented from becoming too short.

(半導體裝置的製造方法) (Method of Manufacturing Semiconductor Device)

以下,邊參照圖3邊對使用切割‧晶粒接合薄膜10的半導體裝置的製造方法進行說明。圖3為示意性地示出半導體裝置的製造步驟的一部分的圖。 Hereinafter, a method of manufacturing a semiconductor device using the dicing die-bonding film 10 will be described with reference to FIG. FIG. 3 is a view schematically showing a part of a manufacturing step of a semiconductor device.

首先,在切割‧晶粒接合薄膜10的接著劑層3的半導體晶圓貼附部分3a上壓接半導體晶圓4,將其接著保持並固定(貼附步驟)。本步驟利用壓接輥等按壓手段邊按壓邊進行。 First, the semiconductor wafer 4 is pressure-bonded to the semiconductor wafer attaching portion 3a of the adhesive layer 3 of the ‧ die-bonding film 10, and then held and fixed (attachment step). This step is performed by pressing with a pressing means such as a pressure roller.

接著,用切割刀片將半導體晶圓4切斷而單片化,得到半導體晶片5。對切割方法沒有特別限定,較佳的是,用切割刀片A切入至半導體晶圓4的厚度的一半後,利用比切割刀片A刃寬小的切割刀片B至少切斷半導體晶圓4和接著劑層3的方法(分步切割/step cut)。 Next, the semiconductor wafer 4 is cut and diced by a dicing blade to obtain a semiconductor wafer 5. The cutting method is not particularly limited. Preferably, after the cutting blade A is cut into half the thickness of the semiconductor wafer 4, the semiconductor wafer 4 and the adhesive are cut at least by the cutting blade B having a smaller blade width than the cutting blade A. Layer 3 method (step cut).

作為切割刀片,較佳在樹脂中嵌入金剛石顆粒而成的刀片。 As the cutting blade, a blade in which diamond particles are embedded in a resin is preferable.

切割刀片的刃厚越薄越好,經常使用刃厚15~30μm左右的刀片。這是因為,切割線越窄,能夠由一片半導體晶圓4製作的晶片的數量越增加。由切割線多的半導體晶圓4製作較小的半導體晶片5時,該傾向更為明顯。 The blade thickness of the cutting blade is as thin as possible, and a blade having a blade thickness of about 15 to 30 μm is often used. This is because the narrower the dicing line, the more the number of wafers that can be fabricated from one semiconductor wafer 4. This tendency is more pronounced when a smaller semiconductor wafer 5 is produced from a semiconductor wafer 4 having a large number of dicing lines.

切割刀片在進行切割時逐漸磨耗,因此,出刃量決定切割刀片的壽命。 The cutting blade is gradually worn during cutting, so the amount of cutting edge determines the life of the cutting blade.

切割刀片薄時,切割刀片的強度變弱,因此若不減小切割刀片的出刃量則無法保持強度,其結果,切割刀片的壽命變短。另一方面,使出刃量過大時,切割中切割刀片破裂、或切割中切割刀片變形而導致晶片的裂紋、缺口。 因此,這種薄型的切割刀片的出刃量較佳為400~1000μm。 When the cutting blade is thin, the strength of the cutting blade becomes weak, so that the strength cannot be maintained without reducing the amount of cutting of the cutting blade, and as a result, the life of the cutting blade becomes short. On the other hand, when the amount of the blade is excessively large, the cutting blade is broken during the cutting, or the cutting blade is deformed during the cutting to cause cracks and chipping of the wafer. Therefore, the thin cutting blade preferably has an edge amount of 400 to 1000 μm.

為了將接著固定於切割‧晶粒接合薄膜10的半導體晶片5剝離,而進行半導體晶片5的拾取。作為拾取的方法,沒有特別限定,可以採用現有公知的各種方法。例如,可列舉出:將各個半導體晶片5自切割‧晶粒接合薄膜10側用針形件(needle)頂起,利用拾取裝置拾取被頂起的半導體晶片5的方法等。 In order to peel off the semiconductor wafer 5 which is subsequently fixed to the dicing die-bonding film 10, the semiconductor wafer 5 is picked up. The method of picking up is not particularly limited, and various conventionally known methods can be employed. For example, a method in which each of the semiconductor wafers 5 is lifted by a needle from the side of the dicing die-bonding film 10, and the semiconductor wafer 5 that is lifted up is picked up by a pick-up device.

此處,關於拾取,在黏著劑層2為紫外線固化型的情況下,在對該黏著劑層2照射紫外線後進行。由此,黏著劑層2對接著劑層3的黏著力降低,半導體晶片5的剝離變得容易。其結果,能夠無損傷地拾取半導體晶片5。對紫外線照射時的照射強度、照射時間等條件沒有特別限定,根據需要適當設定即可。 Here, in the case where the adhesive layer 2 is of an ultraviolet curing type, the pickup layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force of the adhesive layer 2 to the adhesive layer 3 is lowered, and peeling of the semiconductor wafer 5 becomes easy. As a result, the semiconductor wafer 5 can be picked up without damage. The conditions such as the irradiation intensity and the irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be appropriately set as necessary.

拾取的半導體晶片5介由接著劑層3接著固定於被著體6(晶片貼裝)。對晶片貼裝溫度沒有特別限定,例如為80~150℃。 The picked semiconductor wafer 5 is then fixed to the object body 6 (wafer mounting) via the adhesive layer 3. The wafer mounting temperature is not particularly limited and is, for example, 80 to 150 °C.

接著,通過對接著劑層3進行加熱處理,從而將半導體晶片5與被著體6接著。加熱處理的溫度較佳為80℃以上、更佳為170℃以上。加熱處理的溫度較佳為200℃以下、更佳為180℃以下。加熱處理的溫度為上述範圍時,能夠良好地接著。另外,加熱處理的時間可以適當設定。 Next, the semiconductor wafer 5 and the object 6 are bonded by heat-treating the adhesive layer 3. The temperature of the heat treatment is preferably 80 ° C or higher, more preferably 170 ° C or higher. The temperature of the heat treatment is preferably 200 ° C or lower, more preferably 180 ° C or lower. When the temperature of the heat treatment is in the above range, it can be satisfactorily continued. In addition, the time of the heat treatment can be appropriately set.

接著,進行將被著體6的端子部(內部引線)的前端 與半導體晶片5上的電極焊盤(未圖示)利用接合線7電連接的引線接合步驟。作為接合線7,例如可以使用金線、鋁線或銅線等。進行引線接合時的溫度較佳為80℃以上、更佳為120℃以上,該溫度較佳為250℃以下、更佳為175℃以下。另外,其加熱時間進行幾秒~幾分鐘(例如,1秒~1分鐘)。線連接通過在加熱至前述溫度範圍內的狀態下、組合使用由超聲波得到的振動能量和由施加壓力得到的壓接能量而進行。 Next, the front end of the terminal portion (internal lead) of the body 6 to be placed is performed A wire bonding step electrically connected to the electrode pads (not shown) on the semiconductor wafer 5 by the bonding wires 7. As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The temperature at the time of wire bonding is preferably 80 ° C or higher, more preferably 120 ° C or higher, and the temperature is preferably 250 ° C or lower, more preferably 175 ° C or lower. In addition, the heating time is performed for a few seconds to several minutes (for example, 1 second to 1 minute). The wire connection is performed by using the vibration energy obtained by the ultrasonic wave and the pressure contact energy obtained by the applied pressure in a state of being heated to the aforementioned temperature range.

接著,進行利用密封樹脂8將半導體晶片5密封的密封步驟。本步驟是為了保護搭載於被著體6的半導體晶片5、接合線7而進行的。本步驟通過將密封用的樹脂在模具內成型而進行。作為密封樹脂8,例如使用環氧系的樹脂。樹脂密封時的加熱溫度較佳為165℃以上、更佳為170℃以上,該加熱溫度較佳為185℃以下、更佳為180℃以下。 Next, a sealing step of sealing the semiconductor wafer 5 with the sealing resin 8 is performed. This step is performed to protect the semiconductor wafer 5 and the bonding wires 7 mounted on the object 6 . This step is carried out by molding a resin for sealing in a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is preferably 165 ° C or higher, more preferably 170 ° C or higher, and the heating temperature is preferably 185 ° C or lower, more preferably 180 ° C or lower.

根據需要,也可以進一步對密封物進行加熱(後固化步驟)。由此,能將密封步驟中固化不足的密封樹脂8完全固化。加熱溫度可以適當設定。 The seal may be further heated as needed (post-cure step). Thereby, the sealing resin 8 which is insufficiently cured in the sealing step can be completely cured. The heating temperature can be set as appropriate.

如上所述,通過如下的方法,能夠製造半導體裝置。即,所述方法包括下述步驟(I)至(IV):步驟(I),將切割‧晶粒接合薄膜10的接著劑層3和半導體晶圓4黏貼;步驟(II),切割半導體晶圓4,形成半導體晶片5;步驟(III),將由步驟(II)形成的半導體晶片5與接著劑層3一起拾取;以及步驟(IV),將由步驟(III) 拾取的半導體晶片5介由接著劑層3晶片貼裝到被著體6上。 As described above, the semiconductor device can be manufactured by the following method. That is, the method includes the following steps (I) to (IV): step (I), bonding the adhesive layer 3 of the ‧ grain bonded film 10 and the semiconductor wafer 4; step (II), cutting the semiconductor crystal Circle 4, forming a semiconductor wafer 5; step (III), picking up the semiconductor wafer 5 formed by the step (II) together with the adhesive layer 3; and step (IV), by step (III) The picked semiconductor wafer 5 is attached to the object body 6 via the adhesive layer 3 wafer.

〔實施例〕 [Examples]

以下,使用實施例對本發明進行詳細說明,但本發明只要不超出其要旨,不限定於以下實施例。 Hereinafter, the present invention will be described in detail by way of examples, but the invention should not be construed as limited to

對實施例中使用的成分進行說明。 The components used in the examples will be described.

氧化鋁填料1:電氣化學工業(股)製造的DAW-03(球狀氧化鋁填料、平均粒徑:5.1μm、比表面積:0.5m2/g) Alumina filler 1: DAW-03 (spherical alumina filler, average particle diameter: 5.1 μm, specific surface area: 0.5 m 2 /g) manufactured by Electrochemical Industry Co., Ltd.

氧化鋁填料2:電氣化學工業(股)製造的ASFP-20(球狀氧化鋁填料、平均粒徑:0.3μm、比表面積:12.5m2/g) Alumina filler 2: ASFP-20 manufactured by the Electrochemical Industry Co., Ltd. (spherical alumina filler, average particle diameter: 0.3 μm, specific surface area: 12.5 m 2 /g)

氧化鋁填料3:Admatechs Co.,Ltd.製造的AO802(球狀氧化鋁填料、平均粒徑:0.7μm、比表面積:7.5m2/g) Alumina filler 3: AO802 manufactured by Admatechs Co., Ltd. (spherical alumina filler, average particle diameter: 0.7 μm, specific surface area: 7.5 m 2 /g)

丙烯酸類聚合物1:Nagase ChemteX Corporation製造的Teisanresin SG-70L(丙烯酸類共聚物、Mw:90萬、玻璃化轉變溫度:-13℃) Acrylic Polymer 1: Teisanresin SG-70L manufactured by Nagase ChemteX Corporation (acrylic copolymer, Mw: 900,000, glass transition temperature: -13 ° C)

丙烯酸類聚合物2:Nagase ChemteX Corporation製造的Teisanresin SG-P3(丙烯酸類共聚物、Mw:85萬、玻璃化轉變溫度:12℃) Acrylic Polymer 2: Teisanresin SG-P3 manufactured by Nagase ChemteX Corporation (acrylic copolymer, Mw: 850,000, glass transition temperature: 12 ° C)

酚醛樹脂:明和化成(股)製造的MEH-7851H(酚醛樹脂、Mw:1580) Phenolic resin: MEH-7851H (phenolic resin, Mw: 1580) manufactured by Minghe Chemical Co., Ltd.

環氧樹脂:三菱化學(股)製造的JER827(雙酚A型環氧樹脂、Mw:370) Epoxy resin: JER827 (bisphenol A type epoxy resin, Mw: 370) manufactured by Mitsubishi Chemical Corporation

矽烷偶合劑:信越化學(股)製造的KBM-403(3-環氧丙氧基丙基三甲氧基矽烷) Decane coupling agent: KBM-403 (3-glycidoxypropyltrimethoxydecane) manufactured by Shin-Etsu Chemical Co., Ltd.

對氧化鋁填料的表面處理方法進行說明。 The surface treatment method of the alumina filler will be described.

將氧化鋁填料1~3用矽烷偶合劑進行表面處理,得到表面處理氧化鋁填料1~3。表面處理通過幹式法進行,用下述式所示的量的矽烷偶合劑進行處理。 The alumina fillers 1 to 3 were surface-treated with a decane coupling agent to obtain surface-treated alumina fillers 1 to 3. The surface treatment was carried out by a dry method and treated with a decane coupling agent in an amount shown by the following formula.

矽烷偶合劑處理量=(氧化鋁填料的重量(g)×氧化鋁填料的比表面積(m2/g))/矽烷偶合劑的最小被覆面積(m2/g) Handling amount of decane coupling agent = (weight of alumina filler (g) × specific surface area of alumina filler (m 2 /g)) / minimum coated area of decane coupling agent (m 2 /g)

矽烷偶合劑的最小被覆面積(m2/g)=6.02×1023×13×10-20/矽烷偶合劑的分子量 Minimum coated area of decane coupling agent (m 2 / g) = 6.02 × 10 23 × 13 × 10 -20 / molecular weight of decane coupling agent

〔實施例1~6和比較例2~6〕 [Examples 1 to 6 and Comparative Examples 2 to 6] (晶粒接合薄膜(接著劑層)的製作) (Production of die bond film (adhesive layer))

按照表1中記載的配混比、將表面處理過的氧化鋁填料、丙烯酸類聚合物、酚醛樹脂和環氧樹脂放入150mL的聚乙烯(PE)製容器中,用自轉公轉混合器((股)THINKY製造,ARE-310)以2000rpm攪拌4分鐘。接著,追加甲乙酮(MEK),進一步以2000rpm攪拌5分鐘,得到適於塗覆的黏度的接著劑組合物溶液。然後,使用400目(網眼46μm)的斜紋SUS網過濾接著劑組合物溶液,將濾液塗布到進行了有機矽脫模處理的厚度為 50μm的由聚對苯二甲酸乙二醇酯薄膜形成的脫模處理薄膜(剝離襯墊)上,然後在130℃下乾燥2分鐘,得到晶粒接合薄膜(厚度示於表1)。 According to the compounding ratio described in Table 1, the surface-treated alumina filler, acrylic polymer, phenol resin, and epoxy resin were placed in a 150 mL polyethylene (PE) container, and a self-rotating revolution mixer was used (( Manufactured by THINKY, ARE-310) was stirred at 2000 rpm for 4 minutes. Next, methyl ethyl ketone (MEK) was added, and the mixture was further stirred at 2000 rpm for 5 minutes to obtain a solution of an adhesive composition suitable for coating. Then, the adhesive composition solution was filtered using a 400 mesh (mesh 46 μm) twill SUS mesh, and the filtrate was applied to a thickness of the organic enamel release treatment. A 50 μm release-treated film (release liner) formed of a polyethylene terephthalate film was then dried at 130 ° C for 2 minutes to obtain a die-bonded film (thickness is shown in Table 1).

(切割薄膜的製作) (production of cut film)

在具備冷卻管、氮氣導入管、溫度計和攪拌裝置的反應容器中放入丙烯酸2-乙基己酯(有時稱為“2EHA”)80份、丙烯酸-2-羥乙酯(有時稱為“HEA”)20份和甲苯65份,在氮氣氣流中、在61℃下進行6小時的聚合處理,得到丙烯酸類聚合物X。 In a reaction vessel equipped with a cooling tube, a nitrogen gas introduction tube, a thermometer, and a stirring device, 80 parts of 2-ethylhexyl acrylate (sometimes referred to as "2EHA") and 2-hydroxyethyl acrylate (sometimes called "HEA") 20 parts and 65 parts of toluene were subjected to a polymerization treatment at 61 ° C for 6 hours in a nitrogen gas stream to obtain an acrylic polymer X.

在該丙烯酸類聚合物X100份中加入2-甲基丙烯醯氧基乙基異氰酸酯(有時稱為“MOI”)24.1份(相對於HEA為90mol%),在空氣氣流中、在50℃下進行48小時的加成反應處理,得到丙烯酸類聚合物Y。 24.1 parts of 2-methacryloxyethyl isocyanate (sometimes referred to as "MOI") was added to 100 parts of the acrylic polymer X (90 mol% relative to HEA) in an air stream at 50 ° C The addition reaction treatment was carried out for 48 hours to obtain an acrylic polymer Y.

接著,相對於丙烯酸類聚合物Y 100份,加入多異氰酸酯化合物(商品名“CORONATE L”,日本聚氨酯工業(股)製造)3份、作為發泡劑的熱膨脹性微球(商品名“Microsphere F-50D”,松本油脂製藥(股)製造;發泡起始溫度:120℃)35份、和光聚合引發劑(商品名“Irgacure651”,Ciba Specialty Chemicals Inc.製造)5份,製備活性能量射線固化型熱膨脹性黏著劑的黏著劑溶液。 Next, 3 parts of a polyisocyanate compound (trade name "CORONATE L", manufactured by Nippon Polyurethane Industry Co., Ltd.), and a heat-expandable microsphere as a foaming agent (trade name "Microsphere F" were added to 100 parts of the acrylic polymer Y. -50D", manufactured by Matsumoto Oil & Fats Co., Ltd.; foaming initiation temperature: 120 ° C) 35 parts, and photopolymerization initiator (trade name "Irgacure 651", manufactured by Ciba Specialty Chemicals Inc.) 5 parts, preparation of active energy ray curing An adhesive solution for a heat-expandable adhesive.

接著,在厚度100μm的由聚丙烯形成的基材(聚丙烯)上塗布活性能量射線固化型熱膨脹性黏著劑的黏著劑 溶液,然後將其乾燥,從而在基材上形成厚度10μm的黏著劑層。 Next, an adhesive of an active energy ray-curable heat-expandable adhesive is applied onto a substrate (polypropylene) made of polypropylene having a thickness of 100 μm. The solution was then dried to form an adhesive layer having a thickness of 10 μm on the substrate.

進而,僅對黏著劑層上的與晶圓貼附部分相對應的部分照射500mJ/cm2(紫外線照射累積光量)的紫外線,製作使該對應部分紫外線固化了的切割薄膜。 Further, only a portion corresponding to the wafer attaching portion of the adhesive layer was irradiated with ultraviolet rays of 500 mJ/cm 2 (accumulated amount of ultraviolet light) to prepare a cut film in which the corresponding portion was ultraviolet-cured.

(切割/芯片接合薄膜的製作) (Production of dicing/chip bonding film)

在切割薄膜的黏著劑層上轉印晶粒接合薄膜,製作切割‧晶粒接合薄膜。 A die-bonding film was transferred onto the adhesive layer of the dicing film to form a diced die-bonding film.

〔比較例1〕 [Comparative Example 1]

除了改變晶粒接合薄膜的製作方法之外,通過與實施例1同樣的方法製作切割‧晶粒接合薄膜。 A dicing die-bonding film was produced in the same manner as in Example 1 except that the method of producing the die-bonding film was changed.

(晶粒接合薄膜的製作) (Production of die-bonding film)

按照表1中記載的配混比、將丙烯酸類聚合物、酚醛樹脂和甲乙酮(MEK)放入塑膠杯容器中,利用分散裝置以3000rpm攪拌4分鐘,得到接著劑組合物溶液。然後,使用400目(網眼46μm)的斜紋SUS網過濾接著劑組合物溶液,將濾液塗布到有機矽脫模處理過的厚度為50μm的由聚對苯二甲酸乙二醇酯薄膜形成的脫模處理薄膜(剝離襯墊)上,然後,在130℃下乾燥2分鐘,得到晶粒接合薄膜。 The acrylic polymer, the phenol resin, and methyl ethyl ketone (MEK) were placed in a plastic cup container according to the compounding ratios shown in Table 1, and stirred at 3000 rpm for 4 minutes using a dispersing device to obtain an adhesive composition solution. Then, the adhesive composition solution was filtered using a 400 mesh (mesh 46 μm) twill SUS mesh, and the filtrate was applied to an organic germanium release-treated 50 μm thick polyethylene terephthalate film. The film was treated with a release film (release liner), and then dried at 130 ° C for 2 minutes to obtain a die-bonding film.

〔評價〕 〔Evaluation〕

使用得到的切割‧晶粒接合薄膜進行以下的評價。將結果示於表1。 The following evaluation was performed using the obtained diced die-bonding film. The results are shown in Table 1.

(刀片磨耗量) (blade wear amount)

使用磨削裝置((股)DISCO製造的DGP-8760)對裸矽晶圓背面進行磨削直至裸矽晶圓(8英寸直徑、厚度750μm)的厚度達到100μm。使用層壓機將裸矽晶圓(厚度100μm、8英寸)在60℃下以速度10m/min、0.15MPa的壓力貼附到切割‧晶粒接合薄膜的晶粒接合薄膜(接著劑層)。然後,貼附於切割環,利用DISCO(股)製造的Dicer(DFD6760)進行分步切割。 The back side of the bare wafer was ground using a grinding device (DGP-8760 manufactured by DISCO) until the thickness of the bare wafer (8 inch diameter, thickness 750 μm) reached 100 μm. A bare enamel wafer (thickness 100 μm, 8 inches) was attached to the die-bonding film (adhesive layer) of the diced die-bonding film at a pressure of 10 m/min and 0.15 MPa at 60 ° C using a laminator. Then, it was attached to a cutting ring and subjected to step cutting using Dicer (DFD6760) manufactured by DISCO.

以下,邊參照圖4、圖5邊對分步切割進行說明。 Hereinafter, the step cutting will be described with reference to Figs. 4 and 5 .

對第一切割刀片21(Z1刀片)設定刀片高度使得切入裸矽晶圓24至深度50μm,在速度50mm/sec、轉速40000rpm的條件下將裸矽晶圓24切割100m(參照圖4)。然後,對第二切割刀片23(Z2刀片)進行設定使得以深度10μm切入基材1,在速度50mm/sec、轉速45000rpm的條件下,沿切口22切割100m,將裸矽晶圓24和接著劑層3切斷(參照圖5)。需要說明的是,關於清洗水量,將冷卻器、噴淋、噴霧分別設定為1L/min。 The blade height was set to the first cutting blade 21 (Z1 blade) so as to cut into the bare wafer 24 to a depth of 50 μm, and the bare wafer 24 was cut by 100 m at a speed of 50 mm/sec and a rotation speed of 40,000 rpm (refer to FIG. 4). Then, the second cutting blade 23 (Z2 blade) was set so as to cut into the substrate 1 at a depth of 10 μm, and cut 100 m along the slit 22 at a speed of 50 mm/sec and a rotation speed of 45,000 rpm, and the bare wafer 24 and the adhesive were used. Layer 3 is cut (see Fig. 5). In addition, regarding the amount of washing water, the cooler, the shower, and the spray were each set to 1 L/min.

作為Z1刀片,使用DISCO(股)製造的203O-SE 27HCDD。 As the Z1 blade, 203O-SE 27HCDD manufactured by DISCO (share) was used.

以下對Z1刀片的規格進行說明。 The specifications of the Z1 blade are described below.

DISCO(股)製造的203O-SE 27HCDD 203O-SE 27HCDD manufactured by DISCO

集中度(金剛石顆粒的濃度):標準集中度 Concentration (concentration of diamond particles): standard concentration

粒徑(金剛石顆粒的粒徑):#3500 Particle size (diameter of diamond particles): #3500

粘結劑:標準型 Binder: Standard

基座形狀:銳邊基座 Base shape: sharp edge base

內外徑尺寸:外徑55.56mm(直徑)、內徑19.05mm(直徑) Inner and outer diameter dimensions: outer diameter 55.56mm (diameter), inner diameter 19.05mm (diameter)

粒徑符號:C Particle size symbol: C

出刃量:0.76~0.89mm The amount of blade: 0.76~0.89mm

切口寬度(刃寬):0.030~0.035mm Cutting width (blade width): 0.030~0.035mm

作為Z2刀片,使用203O-SE 27HCBB。 As the Z2 blade, 203O-SE 27HCBB was used.

以下對Z2刀片的規格進行說明。 The specifications of the Z2 blade are described below.

DISCO(股)製造的203O-SE 27HCBB 203O-SE 27HCBB manufactured by DISCO

集中度(金剛石顆粒的濃度):標準集中度 Concentration (concentration of diamond particles): standard concentration

粒徑(金剛石顆粒的粒徑):#3500 Particle size (diameter of diamond particles): #3500

粘結劑:標準型 Binder: Standard

基座形狀:銳邊基座 Base shape: sharp edge base

內外徑尺寸:外徑55.56mm(直徑)、內徑19.05mm(直徑) Inner and outer diameter dimensions: outer diameter 55.56mm (diameter), inner diameter 19.05mm (diameter)

粒徑符號:C Particle size symbol: C

出刃量:0.51~0.64mm The amount of blade: 0.51~0.64mm

切口寬度(刃寬):0.020~0.025mm Cutting width (blade width): 0.020~0.025mm

利用切割裝置(DFD6361、DISCO(股)製造)的接觸式的刀片位置對準功能,測定求出Z2刀片的磨耗量。 The amount of wear of the Z2 blade was measured by a contact type blade position alignment function of a cutting device (DFD6361, manufactured by DISCO).

(有無毛刺產生(1)) (with or without burr (1))

除了切割300m之外,通過與刀片磨耗量中說明的方法同樣的方法進行切割。自切割薄膜剝離單片化了的帶接著劑的晶圓(帶接著劑的晶片),用光學顯微鏡觀察切割線。將產生20μm以上的長度的毛刺狀異物的情況判定為×,將異物不足20μm或不存在毛刺狀異物的情況判定為○。 The cutting was carried out in the same manner as the method described in the blade abrasion amount except for cutting 300 m. The singulated wafer with an adhesive (wafer with an adhesive) was peeled off from the dicing film, and the dicing line was observed with an optical microscope. The case where the burr-like foreign matter having a length of 20 μm or more was produced was judged as ×, and the case where the foreign matter was less than 20 μm or the absence of the burr-like foreign matter was judged as ○.

(有無毛刺產生(2)) (with or without burr (2))

除了切割300m之外,通過與刀片磨耗量中說明的方法同樣的方法進行切割。自切割薄膜剝離帶接著劑的晶片,用光學顯微鏡觀察切割線的交點。觀察位置對於每一片裸矽晶圓為總計5處,在中央附近觀察1處,在晶圓的外周附近(距離外周5cm以內)觀察4處。計數在總計5處當中產生了100μm以上的毛刺的位置。表1中,“0/5”表示5處都沒有產生100μm以上的毛刺。表1中,“5/5”表示5處都產生100μm以上的毛刺。 The cutting was carried out in the same manner as the method described in the blade abrasion amount except for cutting 300 m. The wafer with the adhesive was peeled off from the self-cut film, and the intersection of the cut lines was observed with an optical microscope. The observation position was 5 in total for each bare wafer, and one position was observed near the center, and four places were observed near the outer periphery of the wafer (within 5 cm from the outer circumference). The position where burrs of 100 μm or more were generated in a total of five places was counted. In Table 1, "0/5" indicates that no burrs of 100 μm or more were produced at five places. In Table 1, "5/5" indicates that burrs of 100 μm or more were produced at five places.

關於在接著劑層中未配混氧化鋁填料的比較例1,刀片磨耗量過小,刀片的鋒利度降低,產生毛刺。另外,關於接著劑層的厚度大的比較例2、3,刀片磨耗量過大,無法評價有無毛刺產生。關於接著劑層的厚度小的比較例4,刀片磨耗量過小,產生毛刺。關於氧化鋁填料少的比較例5,刀片磨耗量過小,產生毛刺。另外,關於氧化鋁填料多的比較例6,裸矽晶圓無法貼附於接著劑層,無法評價磨耗量、毛刺的產生。 Regarding Comparative Example 1 in which the alumina filler was not compounded in the adhesive layer, the blade abrasion amount was too small, the sharpness of the blade was lowered, and burrs were generated. Further, in Comparative Examples 2 and 3 in which the thickness of the adhesive layer was large, the amount of blade wear was too large, and the occurrence of burrs could not be evaluated. In Comparative Example 4 in which the thickness of the adhesive layer was small, the blade abrasion amount was too small, and burrs were generated. In Comparative Example 5 in which the alumina filler was small, the blade abrasion amount was too small, and burrs were generated. Further, in Comparative Example 6 in which the alumina filler was large, the bare enamel wafer could not be attached to the adhesive layer, and the amount of abrasion and the occurrence of burrs could not be evaluated.

另一方面,關於在接著劑層中配混氧化鋁填料、並將接著劑層的厚度/基材和黏著劑層的總厚度設計為特定範圍的實施例1~6,能夠優化刀片磨耗量,能夠抑制毛刺的產生。 On the other hand, regarding Examples 1 to 6 in which the alumina filler is compounded in the adhesive layer and the thickness of the adhesive layer/the total thickness of the substrate and the adhesive layer is designed to a specific range, the blade wear amount can be optimized. It can suppress the generation of burrs.

Claims (3)

一種切割‧晶粒接合薄膜,其為將基材、黏著劑層和接著劑層依次層疊而成的切割‧晶粒接合薄膜,其中,在所述接著劑層上黏貼有厚度100μm的裸矽晶圓的狀態下,第一切割刀片以切入深度50μm將所述裸矽晶圓切割100m後,沿所述第一切割刀片的切口、第二切割刀片以至少到達所述黏著劑層的切入深度將所述裸矽晶圓和所述接著劑層切斷100m時的所述第二切割刀片的磨耗量為20~200μm,所述第二切割刀片的刃寬小於所述第一切割刀片的刃寬,利用所述第一切割刀片的切口形成條件是:速度50mm/sec、轉速40000rpm,利用所述第二切割刀片的切斷條件是:速度50mm/sec、轉速45000rpm。 A dicing ‧ die-bonding film which is a dicing die-bonding film in which a substrate, an adhesive layer and an adhesive layer are sequentially laminated, wherein a bare twin crystal having a thickness of 100 μm is adhered to the adhesive layer In a circular state, after the first cutting blade cuts the bare wafer by 100 m with a plunging depth of 50 μm, along the slit of the first cutting blade, the second cutting blade will at least reach the plunging depth of the adhesive layer The second cutting blade when the bare enamel wafer and the adhesive layer are cut 100m has an abrasion amount of 20 to 200 μm, and the second cutting blade has a blade width smaller than a blade width of the first cutting blade The slit forming conditions by the first cutting blade were: a speed of 50 mm/sec, a rotational speed of 40,000 rpm, and a cutting condition by the second cutting blade: a speed of 50 mm/sec and a rotational speed of 45,000 rpm. 如請求項1所述的切割‧晶粒接合薄膜,其中,所述接著劑層的厚度/所述基材和所述黏著劑層的總厚度為0.045~0.9。 The dicing die-bonding film according to claim 1, wherein the thickness of the adhesive layer / the total thickness of the substrate and the adhesive layer is from 0.045 to 0.9. 如請求項1或2所述的切割‧晶粒接合薄膜,其中,所述接著劑層包含球狀氧化鋁填料作為研磨劑,所述接著劑層中的所述球狀氧化鋁填料的含量為60~88重量%。 The ‧ grain bonded film according to claim 1 or 2, wherein the adhesive layer comprises a spherical alumina filler as an abrasive, and the content of the spherical alumina filler in the adhesive layer is 60~88% by weight.
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TW201014894A (en) * 2008-09-01 2010-04-16 Nitto Denko Corp Method for manufacturing dicing and die-bonding film

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JP2012186361A (en) * 2011-03-07 2012-09-27 Nitto Denko Corp Dicing/die-bonding film and semiconductor element
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TW200739755A (en) * 2006-03-16 2007-10-16 Toshiba Kk Manufacturing method of semiconductor device
TW201014894A (en) * 2008-09-01 2010-04-16 Nitto Denko Corp Method for manufacturing dicing and die-bonding film

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