TWI633593B - Cutting ‧ grain bonded film - Google Patents

Abstract

The present invention provides a dicing die-bonding film capable of suppressing a decrease in sharpness of a dicing blade and capable of suppressing generation of burrs. The present invention relates to a dicing die-bonding film having an abrasion amount of a cutting blade of 20 to 200 μm when a bare cut wafer is step cut.

Description

Cutting ‧ grain bonded film

The present invention relates to a cut ‧ grain bonded film.

In the step of cutting the semiconductor wafer, the semiconductor wafer is sometimes diced in a state of being attached to the dicing film. As the dicing film, a dicing film having a structure in which an adhesive layer is laminated on a substrate is known (for example, see Patent Document 1).

However, when the semiconductor wafer is diced using the dicing film, burr-like foreign matter (grinding debris derived from the substrate) may remain on the dicing line.

[Previous Technical Literature] [Patent Document]

Patent Document 1: Japanese Laid-Open Patent Publication No. 2011-198976

Patent Document 1 discloses a dicing film in which a specific resin is used as a constituent component of a substrate in order to reduce the occurrence of burrs. However, the conventional dicing film described in Patent Document 1 or the like is attached to the semiconductor wafer. In the case of a large number of cuttings, the cutting blades are attached with grinding debris, which causes clogging, resulting in a decrease in the sharpness of the cutting blade. The reduction in the sharpness of the cutting blade makes the burr easy to produce.

An object of the present invention is to solve the above problems and to provide a dicing die-bonding film capable of suppressing a decrease in sharpness of a dicing blade and suppressing generation of burrs.

The present invention relates to a dicing die-bonding film which is a dicing die-bonding film in which a substrate, an adhesive layer and an adhesive layer are sequentially laminated, wherein a bare thickness of 100 μm is adhered to the adhesive layer. In the state of the wafer, the first dicing blade cuts the bare boring wafer by 100 m at a plunging depth of 50 μm, along the slit of the first cutting blade and the cutting depth of the second dicing blade to at least reach the aforementioned adhesive layer. The abrasion amount of the second cutting blade when the bare wafer and the adhesive layer are cut by 100 m is 20 to 200 μm, and the blade width of the second cutting blade is smaller than the blade width of the first cutting blade, and the first cutting is performed by using the first cutting The slit forming conditions of the blade were a speed of 50 mm/sec and a rotational speed of 40,000 rpm, and the cutting conditions of the second cutting blade were: a speed of 50 mm/sec and a rotational speed of 45,000 rpm.

When the amount of abrasion is 20 μm or more, it is possible to suppress a decrease in the sharpness of the dicing blade, and it is possible to suppress the occurrence of burrs. On the other hand, when the abrasion amount is 200 μm or less, the life of the dicing blade can be prevented from becoming too short.

It should be noted that the present invention defines the use of two types of cutting blades. The amount of abrasion of the second cutting blade when the bare wafer is stepped is stepped, but the cutting/grain bonding film of the present invention can also exert the aforementioned effects when other cutting methods such as single-step cutting are employed.

Preferably, the thickness of the adhesive layer/the total thickness of the substrate and the adhesive layer is 0.045 to 0.9. When it is 0.045 or more, the grinding (finishing) effect of a dicing blade can be obtained, and the fall of the sharpness of a dicing blade can be suppressed. When the pass ratio is 0.9 or less, the life of the dicing blade can be prevented from becoming too short.

Preferably, the adhesive layer contains a spherical alumina filler as an abrasive, and the content of the spherical alumina filler in the adhesive layer is 60 to 88% by weight. By including the alumina having hardness second only to diamond in the adhesive layer, the dicing blade can be satisfactorily polished. Further, by making the shape of the alumina into a highly fillable spherical shape, a good polishing effect can be obtained. Further, when the content of the spherical alumina filler is within the above range, the dicing blade can be satisfactorily polished, and the reduction in sharpness can be prevented.

According to the present invention, it is possible to suppress a decrease in the sharpness of the cutting blade, and it is possible to suppress the occurrence of burrs.

1‧‧‧Substrate

2‧‧‧Adhesive layer

3‧‧‧ adhesive layer

4‧‧‧Semiconductor wafer

5‧‧‧Semiconductor wafer

6‧‧‧Being

7‧‧‧bonding line

8‧‧‧ Sealing resin

10‧‧‧Cutting ‧ die bonding film

11‧‧‧ cutting film

21‧‧‧First cutting blade

22‧‧‧ incision

23‧‧‧Second cutting blade

24‧‧‧Naked wafer

Fig. 1 is a schematic cross-sectional view showing a dicing die-bonding film of Embodiment 1.

Fig. 2 is a view showing a modification of the dicing die-bonding film of the first embodiment; Schematic diagram of the section.

FIG. 3 is a view schematically showing a part of a manufacturing step of a semiconductor device.

(a) of FIG. 4 is a view schematically showing a state in which the first dicing blade is cut into the bare enamel wafer. (b) of FIG. 4 is a view schematically showing a part of a cross section of a bare wafer in which a slit is formed using a first dicing blade.

(a) of FIG. 5 is a view schematically showing a state in which the second cutting blade cuts the bare wafer and the adhesive layer. (b) of FIG. 5 is a view schematically showing a part of a cross section of a bare wafer cut by a second dicing blade.

[Best Practice for Carrying Out the Invention]

The present invention will be described in detail below with reference to embodiments, but the invention is not limited thereto.

[Embodiment 1]

Fig. 1 is a schematic cross-sectional view showing a dicing die-bonding film of Embodiment 1. Fig. 2 is a schematic cross-sectional view showing a modification of the dicing die-bonding film of the first embodiment.

As shown in FIG. 1, the dicing die-bonding film 10 has a structure in which an adhesive layer 3 is laminated on the dicing film 11. The dicing film 11 is formed by laminating an adhesive layer 2 on a substrate 1, and an adhesive layer 3 is provided on the adhesive layer 2. In addition, the cut ‧ grain bonded film 10 can also be as shown in the figure 2 shows a configuration in which the adhesive layer 3 is formed only on the workpiece (semiconductor wafer 4 or the like).

In a state in which the adhesive layer 3 of the ‧ grain bonded film 10 is pasted with a bare enamel wafer having a thickness of 100 μm, the first dicing blade cuts the bare enamel wafer by 100 m at a plunging depth of 50 μm, and the slit along the first cutting blade The second cutting blade has an abrasion amount of the second cutting blade when the bare wafer and the adhesive layer 3 are cut by 100 m at least at the depth of penetration of the adhesive layer 2 to 20 μm or more. When the thickness is 20 μm or more, it is possible to suppress the decrease in the sharpness of the dicing blade, and it is possible to suppress the occurrence of burrs. From the viewpoint of suppressing the decrease in the sharpness of the dicing blade, the larger the amount of abrasion, the better. Therefore, the amount of abrasion is preferably 30 μm or more, and more preferably 50 μm or more.

On the other hand, from the viewpoint of the life of the dicing blade, the smaller the amount of abrasion, the better. Specifically, the abrasion amount is 200 μm or less, preferably 150 μm or less, and more preferably 120 μm or less.

The bare wafer is a germanium wafer in a state before processing such as pattern formation. As the first cutting blade and the second cutting blade, a blade in which diamond particles are embedded in a resin can be suitably used.

It should be noted that the blade width of the second cutting blade is smaller than the blade width of the first cutting blade. Further, the slit formed by the first cutting blade was formed under the conditions of a feed speed of 50 mm/sec and a number of revolutions of 40,000 rpm. The cutting by the second cutting blade was carried out under the conditions of a feed speed of 50 mm/sec and a number of revolutions of 45,000 rpm.

The amount of abrasion can be measured by the method described in the examples.

(adhesive layer 3)

The coating layer 3 is, for example, a layer formed of a thermoplastic resin and a thermosetting resin, and more specifically, a layer formed of an epoxy resin, a phenol resin, and an acrylic resin is exemplified.

The epoxy resin is not particularly limited as long as it is a commonly used epoxy resin as an adhesive composition. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenation double can be used. Difunctional ring of phenol type A, bisphenol AF type, biphenyl type, naphthalene type, anthraquinone type, phenol novolac type, o-cresol novolac type, trishydroxyphenylmethane type, tetrahydroxyphenylethane type, etc. An epoxy resin or a polyfunctional epoxy resin, or an epoxy resin such as a carbendazim type, a triglycidyl isocyanurate type or a glycidylamine type. These can be used individually or in combination of 2 or more types. Among these epoxy resins, in the present invention, an epoxy resin having an aromatic ring such as a benzene ring, a biphenyl ring or a naphthalene ring is particularly preferable. Specific examples thereof include a novolak type epoxy resin, a xylylene skeleton-containing phenol novolak type epoxy resin, a biphenyl skeleton-containing novolak type epoxy resin, and a bisphenol A type epoxy resin. Bisphenol F type epoxy resin, tetramethyl biphenol type epoxy resin, triphenylmethane type epoxy resin, and the like. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent, and are excellent in heat resistance and the like. It should be noted that the epoxy resin contains less ionic impurities or the like which corrode the semiconductor element.

The weight average molecular weight of the epoxy resin is preferably in the range of 300 to 1,500, more preferably in the range of 350 to 1,000. When the weight average molecular weight is less than 300, the mechanical strength, heat resistance, and moisture resistance of the die-bonding film 3 after heat curing may be lowered. On the other hand, when it is greater than 1500, sometimes hot The crystal grain bonded film after curing becomes rigid and becomes weak. In addition, the weight average molecular weight in this invention is a polystyrene conversion value obtained by the gel permeation chromatography (GPC) using the standard curve based on standard polystyrene.

Further, the phenol resin functions as a curing agent for the epoxy resin, and examples thereof include a phenol novolak resin, a phenol biphenyl resin, a phenol aralkyl resin, a cresol novolak resin, and a t-butyl phenol novolak resin. A novolac type phenol resin such as a nonylphenol novolak resin, a soluble phenol resin, or a polyhydroxystyrene such as polyparaxyl styrene. These can be used individually or in combination of 2 or more types. Among these phenol resins, a phenol novolak resin and a phenol aralkyl resin are preferred. This is because the connection reliability of the semiconductor device can be improved.

The weight average molecular weight of the phenol resin is preferably in the range of 300 to 1,500, more preferably in the range of 350 to 1,000. When the weight average molecular weight is less than 300, the thermal curing of the epoxy resin may be insufficient, and sufficient toughness may not be obtained. On the other hand, when the weight average molecular weight is more than 1,500, the viscosity is high, and the workability at the time of production of the die-bonding film may be lowered.

The compounding ratio of the epoxy resin to the phenol resin is preferably, for example, 1 to 2.0 equivalents based on 1 equivalent of the epoxy group in the epoxy resin component, and the hydroxyl group in the phenol resin is 0.5 equivalent to 2.0 equivalents. More preferably, it is 0.8 equivalent - 1.2 equivalent. In other words, when the mixing ratio of the two is out of the above range, a sufficient curing reaction cannot be performed, and the properties of the cured epoxy resin are likely to deteriorate.

The total content of the epoxy resin and the phenolic resin in the layer 3 is preferably 5% by weight or more, more preferably 9% by weight or more. When it is 5% by weight or more, the reliability of reflow resistance can be obtained by a crosslinking reaction between an epoxy resin and a phenol resin. Further, the total content of the epoxy resin and the phenol resin in the adhesive layer 3 is preferably 40% by weight or less, more preferably 30% by weight or less. When it is 40% by weight or less, the brittleness of the adhesive layer 3 can be suppressed. The epoxy resin and the phenol resin are usually low molecular weight components and have low flexibility at room temperature. Therefore, when the total content is too large, the adhesive layer 3 tends to be easily broken.

The acrylic resin is not particularly limited, and in the present invention, a carboxyl group-containing acrylic copolymer or an epoxy group-containing acrylic copolymer is preferred. The functional group monomer used in the carboxyl group-containing acrylic copolymer may, for example, be acrylic acid or methacrylic acid. The content of acrylic acid or methacrylic acid is adjusted in such a manner that the acid value is in the range of 1 to 4. For the remainder, a mixture of an alkyl acrylate having an alkyl group having 1 to 8 carbon atoms such as methyl acrylate or methyl methacrylate, an alkyl methacrylate, styrene, or acrylonitrile can be used. Among them, ethyl (meth)acrylate and/or butyl (meth)acrylate are particularly preferred. The mixing ratio is preferably adjusted in consideration of the glass transition temperature (Tg) of the acrylic resin to be described later. In addition, the polymerization method is not particularly limited, and for example, a conventionally known method such as a solution polymerization method, a bulk polymerization method, a suspension polymerization method, or an emulsion polymerization method can be employed.

Further, the other monomer component copolymerizable with the monomer component is not particularly limited, and examples thereof include acrylonitrile and the like. The amount of these copolymerizable monomer components is preferably in the range of 1% by weight to 20% by weight based on the total of the monomer components. By containing other monomer components within this range of values, Improvements in cohesion, adhesion, and the like can be achieved.

The content of the acrylic resin in the subsequent agent layer 3 is preferably 2% by weight or more, and more preferably 5% by weight or more. When it is 2% by weight or more, it is easy to maintain the shape as a film. Further, the content of the acrylic resin is preferably 15% by weight or less, more preferably 10% by weight or less. When it is 15% by weight or less, good unevenness at high temperature can be obtained.

The layer of agent 3 then typically contains an abrasive. By including the abrasive in the adhesive layer 3, the surface of the dicing blade can be polished (finished), and the sharpness of the dicing blade can be prevented from being lowered.

As the abrasive, a spherical alumina filler is preferred. Since alumina has a hardness second only to diamond, the dicing blade can be satisfactorily polished by including alumina in the adhesive layer 3. Further, when the alumina has a low filling amount, the polishing effect is small, but by making the shape of the alumina into a highly filled spherical shape, a good polishing effect can be obtained.

The average particle diameter of the spherical alumina filler is preferably 0.3 μm or more, and more preferably 0.5 μm or more. When the pass is 0.3 μm or more, the unevenness followability at a high temperature can be obtained, and high filling is possible. Further, the average particle diameter of the spherical alumina filler is preferably 15 μm or less, more preferably 10 μm or less. When it is 15 μm or less, the thickness of the adhesive layer 3 is made possible.

The average particle diameter of the spherical alumina filler is a value obtained by, for example, a spectrophotometric fine particle size distribution meter (manufactured by HORIBA, device name: LA-910).

The maximum particle diameter of the spherical alumina filler is preferably 40 μm or less. When the thickness is 40 μm or less, it is possible to cope with the reduction in thickness. Thickness of the layer 3 Thinning year by year, 40um or less has become the mainstream, and fillers with larger particle diameters are not suitable.

The spherical alumina filler is preferably treated with a decane coupling agent (pretreatment). Thereby, the dispersibility of the spherical alumina filler becomes good, and the filling of the spherical alumina filler is possible.

The decane coupling agent is a compound having a hydrolyzable group and an organic functional group in the molecule.

The hydrolyzable group may, for example, be an alkoxy group having 1 to 6 carbon atoms such as a methoxy group or an ethoxy group, an ethoxylated group or a 2-methoxyethoxy group. Among them, a methoxy group is preferred because of its high hydrolysis rate and good decane coupling treatment.

Examples of the organic functional group include a vinyl group, an epoxy group, a styryl group, a methacryloyl group, an acryl group, an amine group, a urea group, a decyl group, a thioether group, and an isocyanate group. Among these, an epoxy group and a methacryl oxime group are preferable because the dispersibility of the spherical alumina filler can be improved and the fluidity of the adhesive layer 3 can be improved.

Examples of the decane coupling agent include vinyl-containing decane coupling agents such as vinyl trimethoxy decane and vinyl triethoxy decane; and 2-(3,4-epoxycyclohexyl)ethyltrimethoxy decane. 3-glycidoxypropylmethyldimethoxydecane, 3-glycidoxypropyltrimethoxydecane, 3-glycidoxypropylmethyldiethoxydecane, 3- An epoxy group-containing decane coupling agent such as glycidoxypropyltriethoxydecane (epoxydecane-based decane coupling agent); a styrene-based decane coupling agent such as p-styryltrimethoxydecane; Acryloxypropylmethyldimethoxydecane, 3-methylpropane Methyl propylene oxime such as ethenyloxypropyltrimethoxydecane, 3-methylpropenyloxypropylmethyldiethoxydecane, 3-methylpropenyloxypropyltriethoxydecane a phthalic acid coupling agent (methacryl decyl decane decane coupling agent); an acrylonitrile-based decane coupling agent such as 3-propenyl methoxypropyltrimethoxy decane; N-2-(aminoethyl)-3 -Aminopropylmethyldimethoxydecane, N-2-(aminoethyl)-3-aminopropyltrimethoxydecane, 3-aminopropyltrimethoxydecane, 3-amino Propyltriethoxydecane, 3-triethoxymethylidene-N-(1,3-dimethyl-butylene)propylamine, N-phenyl-3-aminopropyltrimethoxy Amine-containing decane coupling agent such as decane, N-(vinylbenzyl)-2-aminoethyl-3-aminopropyltrimethoxydecane; urea-containing such as 3-ureidopropyltriethoxydecane a decane-based coupling agent; a mercapto-decane-containing coupling agent such as 3-mercaptopropylmethyldimethoxydecane or 3-mercaptopropyltrimethoxydecane; bis(triethoxycarbamidopropyl)tetrasulfide Sulfonyl ether-containing decane coupling agent; isocyanate group such as 3-isocyanate propyl triethoxy decane A decane coupling agent or the like.

The method for treating the spherical alumina filler with a decane coupling agent is not particularly limited, and examples thereof include a wet method in which a spherical alumina filler and a decane coupling agent are mixed in a solvent; and a spherical alumina in a gas phase; A dry method in which a filler is treated with a decane coupling agent or the like.

The treatment amount of the decane coupling agent is not particularly limited, and it is preferably treated with 0.05 to 5 parts by weight of a decane coupling agent per 100 parts by weight of the spherical alumina filler.

The content of the spherical alumina filler in the layer 3 is preferably 60% by weight or more, more preferably 70% by weight or more, still more preferably 75% by weight. on. When it is 60% by weight or more, the dicing blade can be satisfactorily polished, and the reduction in sharpness can be prevented. The content of the spherical alumina filler in the layer 3 is preferably 90% by weight or less, more preferably 88% by weight or less. When it is 90% by weight or less, the life of the dicing blade can be prevented from becoming too short.

The subsequent layer 3 may suitably contain, in addition to the above components, a compounding agent commonly used in the production of an adhesive layer, such as a crosslinking agent.

The method for producing the adhesive layer 3 is not particularly limited, and preferably includes a method of preparing a solution of an adhesive composition containing the above respective components (for example, a thermoplastic resin, a thermosetting resin, and a spherical alumina filler). And a step of filtering the adhesive composition solution to obtain a filtrate; and drying the coating film after applying the filtrate to the substrate separator to form a coating film.

The solvent to be used in the adhesive composition solution is not particularly limited, and an organic solvent capable of uniformly dissolving, kneading or dispersing the above components is preferable. For example, a ketone solvent such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone or cyclohexanone, toluene or xylene may be mentioned.

The mesh of the filter material used in the filtration is preferably 50 μm or less. Thereby, the maximum particle diameter of the spherical alumina filler can be 50 μm or less, and aggregation of the aggregate of the alumina filler can be suppressed from entering the adhesive layer 3.

As the substrate separator, surface coating can be carried out using a polyethylene terephthalate (PET), polyethylene, polypropylene, a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate release agent. Plastic film or paper. As a coating method of the adhesive composition solution, for example, a roller can be mentioned Coating, screen coating, gravure coating, and the like. Further, the drying conditions of the coating film are not particularly limited, and for example, it can be carried out at a drying temperature of 70 to 160 ° C and a drying time of 1 to 5 minutes.

The thickness of the adhesive layer 3 is not particularly limited, but is preferably 5 μm or more. When it is 5 μm or more, the reduction in the sharpness of the dicing blade can be suppressed. Further, the thickness of the adhesive layer 3 is preferably 100 μm or less, and more preferably 50 μm or less. When it is 100 μm or less, the life of the dicing blade can be prevented from becoming too short.

(Substrate 1)

The substrate 1 serves as a strength matrix for the dicing die-bonding film 10. Examples of the substrate 1 include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, and homopolymerization. Polyolefins such as polypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer, multiionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (none Copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate, polyester, polycarbonate, poly Yttrium, polyetheretherketone, polyimine, polyetherimide, polyamine, wholly aromatic polyamine, polyphenylene sulfide, aramid (paper), glass, glass cloth, fluororesin, Polyvinyl chloride, polyvinylidene chloride, cellulose resin, organic resin, metal (foil), paper, and the like. Among them, polyethylene, polypropylene, and the like are preferable as the substrate 1 because of a small water absorption rate.

The surface of the substrate 1 may be subjected to a common surface treatment for improving adhesion to adjacent layers, retention, and the like, such as chromic acid treatment, ozone exposure, flame exposure, high voltage electric shock exposure, ionizing radiation treatment, or the like. Physical treatment, coating treatment using a primer (for example, an adhesive described later).

As the substrate 1, a material of the same kind or different kinds can be appropriately selected, and a material obtained by blending a plurality of substances can be used as needed.

The thickness of the substrate 1 is not particularly limited and can be appropriately determined, and is usually about 60 to 150 μm.

(adhesive layer 2)

As the adhesive constituting the adhesive layer 2, it is preferable to use an acrylic polymer from the viewpoint of cleaning and cleaning properties of an organic solvent such as ultrapure water or alcohol from a contaminated electronic component such as a semiconductor wafer or glass. Acrylic adhesive for base polymers.

As the acrylic polymer, for example, an alkyl (meth)acrylate (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, sec-butyl ester, tert-butyl ester) can be used. , amyl ester, isoamyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, decyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, An alkyl group such as a tridecyl ester, a tetradecyl ester, a hexadecyl ester, an octadecyl ester or an eicosyl ester having a carbon number of 1 to 30, particularly a linear chain having 4 to 18 carbon atoms One or two or more kinds of acrylic polymers such as a branched alkyl ester (such as a branched alkyl ester) and a cycloalkyl (meth)acrylate (for example, a cyclopentyl ester or a cyclohexyl ester). . In addition, (meth)acrylate means an acrylate and/or a methacrylate, and all (meth) of this invention means the same meaning.

The acrylic polymer may contain a unit corresponding to another monomer component copolymerizable with the alkyl (meth)acrylate or the cycloalkyl ester as needed for the purpose of improving cohesive force, heat resistance and the like. Examples of such a monomer component include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. And other carboxyl group-containing monomers; anhydride monomers such as maleic anhydride and itaconic anhydride; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate , 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (meth)acrylic acid a hydroxyl group-containing monomer such as (4-hydroxymethylcyclohexyl)methyl ester; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)acrylamido-2-methylpropanesulfonic acid, (methyl) a sulfonic acid group-containing monomer such as acrylamide propanesulfonic acid, sulfopropyl (meth)acrylate, (meth)acryloxynaphthalenesulfonic acid or the like; a phosphate group containing 2-hydroxyethyl acryloyl phosphate Monomer; acrylamide, acrylonitrile, and the like. These monomer components which can be copolymerized may be used alone or in combination of two or more. The amount of these copolymerizable monomers is preferably 40% by weight or less based on the total of the monomer components.

Further, the acrylic polymer may contain a polyfunctional monomer or the like as a monomer component for copolymerization, if necessary, for crosslinking. Examples of such a polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, and (poly)propylene glycol II. (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, Dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) acrylate, and the like. These polyfunctional monomers may be used alone or in combination of two or more. The amount of the polyfunctional monomer to be used is preferably 30% by weight or less based on the total of the monomer components from the viewpoint of adhesion characteristics and the like.

The preparation of the acrylic polymer can be carried out, for example, by using a suitable method such as a solution polymerization method, an emulsion polymerization method, a bulk polymerization method or a suspension polymerization method for a mixture of one or more kinds of component monomers. The adhesive layer 2 is preferably a composition that suppresses the inclusion of a low molecular weight substance from the viewpoint of preventing wafer contamination. From the above viewpoint, it is preferred to use an acrylic acid having a weight average molecular weight of 300,000 or more, particularly 400,000 to 3,000,000. Since the polymer is a main component, the adhesive can also be a suitable crosslinking type based on an internal crosslinking method, an external crosslinking method, or the like.

Further, in order to control the crosslinking density of the adhesive layer 2, for example, a polyfunctional isocyanate compound, a polyfunctional epoxy compound, a melamine compound, a metal salt compound, a metal chelate compound, or an amine resin can be used. A method of crosslinking treatment by a suitable external crosslinking agent such as a compound or a peroxide; and a method of mixing a low molecular compound having two or more carbon-carbon double bonds and performing crosslinking treatment by irradiation with energy rays or the like The way. When an external crosslinking agent is used, the amount thereof is balanced by the base polymer to be crosslinked, and further used as an adhesive. Determined appropriately on the way. In general, it is preferably blended in an amount of about 5 parts by weight or less, more preferably 0.1 to 5 parts by weight, per 100 parts by weight of the base polymer. Further, in the adhesive, various additives such as a tackifier or an anti-aging agent may be used in addition to the above-mentioned components as needed.

As the adhesive constituting the adhesive layer 2, a radiation-curable adhesive is suitable. As the radiation-curable adhesive, an addition type radiation-curable adhesive in which a radiation-curable monomer component and a radiation-curable oligomer component are blended in the above-mentioned adhesive can be exemplified.

Examples of the radiation-curable monomer component to be blended include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, and tetramethylol methane tetra ( Methyl) acrylate, pentaerythritol tri(meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxy penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4- Butanediol di(meth)acrylate and the like. These monomer components may be used alone or in combination of two or more.

In addition, examples of the radiation curable oligomer component include various oligomers such as a urethane type, a polyether type, a polyester type, a polycarbonate type, and a polybutadiene type, and the molecular weight thereof is in the range of about 100 to 30,000. It is appropriate. The amount of the radiation-curable monomer component and the oligomer component can be appropriately determined according to the type of the pressure-sensitive adhesive layer to reduce the adhesion of the pressure-sensitive adhesive layer. In general, it is, for example, 5 parts by weight to 500 parts by weight, preferably about 70 parts by weight to 150 parts by weight, per 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

In addition, as the radiation curing type adhesive, in addition to the aforementioned additive type In addition to the radiation-curable adhesive, an intrinsic radiation-curable adhesive using a substance having a carbon-carbon double bond in a polymer side chain or a main chain or a main chain terminal as a base polymer may be mentioned. The intrinsic type radiation-curable adhesive does not need to contain an oligomer component or the like as a low molecular component, and therefore does not contain much, so that an oligomer component or the like does not move over time in the adhesive, and a stable layer can be formed. The structure of the adhesive layer is preferred.

The aforementioned base polymer having a carbon-carbon double bond can be used without any particular limitation, and has a carbon-carbon double bond and has an adhesive property. As such a base polymer, a polymer having an acrylic polymer as a basic skeleton is preferred. The basic skeleton of the acrylic polymer may, for example, be an acrylic polymer exemplified above.

The method of introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be employed. When a carbon-carbon double bond is introduced from a polymer side chain, molecular design is easy. For example, a method of copolymerizing an acrylic polymer with a monomer having a functional group, and then a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond in the radiation curing of the carbon-carbon double bond can be exemplified. The condensation or addition reaction is carried out in a sexual state.

Examples of the combination of these functional groups include a carboxylic acid group and an epoxy group, a carboxylic acid group and an aziridine group, a hydroxyl group, an isocyanate group, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is suitable from the viewpoint of ease of reaction tracking. Further, as long as it is a combination capable of producing an acrylic polymer having a carbon-carbon double bond by a combination of these functional groups, the functional group may be located on either side of the acrylic polymer and the above-mentioned compound, and in the above preferred combination, The case where the acrylic polymer has a hydroxyl group and the above compound has an isocyanate group is suitable. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryl oxime isocyanate, 2-methacryloxyethyl isocyanate, m-isopropenyl- α , α -dimethylbenzyl. Isocyanate, etc. Further, as the acrylic polymer, an ether compound such as the above-exemplified hydroxyl group-containing monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether can be used. A substance obtained by copolymerization.

The above-mentioned intrinsic radiation-curable adhesive may be used alone as the base polymer (especially an acrylic polymer) having a carbon-carbon double bond, or may be blended with the radiation-curable single sheet at a level that does not deteriorate the properties. A photopolymerizable compound such as a body component or an oligomer component. The compounding amount of the photopolymerizable compound is usually in the range of 30 parts by weight or less, preferably 0 to 10 parts by weight, per 100 parts by weight of the base polymer.

It is preferable that the radiation-curable adhesive contains a photopolymerization initiator when it is cured by ultraviolet rays or the like.

As the adhesive constituting the adhesive layer 2, the active energy ray-curable adhesive described in JP-A-2010-129701 can be suitably used. The active energy ray-curable adhesive contains the following acrylic polymer A.

Acrylic polymer A: an acrylic polymer having a structure in which an acrylate represented by 50% by weight or more of CH ₂ =CHCOOR (wherein R is an alkyl group having 6 to 10 carbon atoms) and a polymer obtained by using a monomer composition containing 10% by weight to 30% by weight of a hydroxyl group-containing monomer and containing no carboxyl group-containing monomer, and 50% to 95% by mole of a radical-reactive carbon relative to the hydroxyl group-containing monomer A structure in which an isocyanate compound having a carbon double bond is subjected to an addition reaction.

In the acrylic polymer A, an alkyl acrylate (hereinafter sometimes referred to as "C6-10 alkyl acrylate") represented by CH ₂ =CHCOOR (wherein R is an alkyl group having 6 to 10 carbon atoms) is used. When the carbon number of the alkyl group of the alkyl acrylate is less than 6, the peeling force may be too large and the pick-up property may fall. On the other hand, when the carbon number of the alkyl group of the alkyl acrylate exceeds 10, the adhesion or adhesion to the adhesive layer 3 is lowered, and as a result, wafer scattering may occur at the time of dicing. As the C6-10 alkyl acrylate, an alkyl acrylate having an alkyl group having a carbon number of 8 to 9 is particularly preferable, and 2-ethylhexyl acrylate and isooctyl acrylate are preferred.

The content of the C6-10 alkyl acrylate is preferably 50% by weight or more, and more preferably 70% by weight to 90% by weight based on the total amount of the monomer components. When the content of the C6-10 alkyl acrylate is less than 50% by weight based on the total amount of the monomer components, the peeling force may become excessively large and the pickup property may be lowered.

The content of the hydroxyl group-containing monomer is preferably in the range of 10% by weight to 30% by weight, more preferably 15% by weight to 25% by weight based on the total amount of the monomer components. When the content of the hydroxyl group-containing monomer is less than 10% by weight based on the total amount of the monomer components, crosslinking after the active energy ray irradiation is insufficient, and pick-up property may be lowered, and residual glue may be generated on the semiconductor wafer with the adhesive layer 3. On the other hand, when the content of the hydroxyl group-containing monomer exceeds 30% by weight based on the total amount of the monomer components, the polarity of the adhesive becomes high, and the interaction with the adhesive layer 3 becomes high. Therefore, the pickup property is lowered.

The acrylic polymer A may also contain units corresponding to other monomer components as needed.

In the acrylic polymer A, an isocyanate compound having a radical-reactive carbon-carbon double bond (sometimes referred to as a "double-bonded isocyanate-containing compound") is used. That is, the acrylic polymer preferably has a structure in which a polymer obtained from a monomer composition such as the above acrylate or a hydroxyl group-containing monomer is subjected to an addition reaction with a double bond-containing isocyanate compound. Therefore, the acrylic polymer preferably has a radical-reactive carbon-carbon double bond in its molecular structure. Thereby, an active energy ray-curable adhesive layer (such as an ultraviolet curable adhesive layer) which is cured by irradiation with an active energy ray (such as ultraviolet rays) can be obtained, and peeling of the adhesive layer 3 and the adhesive layer 2 can be reduced. force.

Examples of the double bond-containing isocyanate compound include methacryl oxime isocyanate, propylene decyl isocyanate, 2-methyl propylene methoxyethyl isocyanate, 2-propenyl methoxyethyl isocyanate, and m-isopropenyl group. α,α-dimethylbenzyl isocyanate or the like. The double bond-containing isocyanate compound may be used singly or in combination of two or more.

The amount of the double bond-containing isocyanate compound to be used is preferably in the range of 50 mol% to 95 mol%, more preferably 75 mol% to 90 mol%, based on the hydroxyl group-containing monomer. When the amount of the double bond-containing isocyanate compound is less than 50% by mole based on the hydroxyl group-containing monomer, the crosslinking after the active energy ray irradiation is insufficient, and the pickup property may be lowered to cause a residue on the semiconductor wafer with the adhesive layer 3.

In addition, in the active energy ray-curable adhesive, in order to adjust the activity The external cross-linking agent can also be suitably used for the adhesive force before the irradiation of the energy ray and the adhesive force after the irradiation of the active energy ray. Specific examples of the external crosslinking method include a method in which a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine-based crosslinking agent is added and reacted. When an external crosslinking agent is used, the amount thereof is appropriately determined depending on the balance with the base polymer to be crosslinked, and further as the use of the adhesive. The amount of the external crosslinking agent is usually 20 parts by weight or less (preferably 0.1 parts by weight to 10 parts by weight) based on 100 parts by weight of the above base polymer. Further, in the active energy ray-curable pressure-sensitive adhesive, additives such as various conventionally known various tackifiers, anti-aging agents, and foaming agents may be blended as needed in addition to the above-mentioned components.

The thickness of the adhesive layer 2 is not particularly limited and can be appropriately determined, and is usually about 5 to 200 μm.

(Thickness of the adhesive layer 3 / total thickness of the substrate 1 and the adhesive layer 2)

The thickness of the subsequent agent layer 3 / the total thickness of the substrate 1 and the adhesive layer 2 is preferably 0.045 or more, more preferably 0.05 or more. When it is 0.045 or more, the grinding (finishing) effect of the cutting blade can be obtained, and the reduction of the sharpness of the cutting blade can be suppressed. The thickness of the subsequent agent layer 3 / the total thickness of the substrate 1 and the adhesive layer 2 is preferably 0.9 or less, more preferably 0.45 or less, still more preferably 0.3 or less. When it is 0.9 or less, the life of a dicing blade can be prevented from becoming too short.

(Method of Manufacturing Semiconductor Device)

Hereinafter, a method of manufacturing a semiconductor device using the dicing die-bonding film 10 will be described with reference to FIG. FIG. 3 is a view schematically showing a part of a manufacturing step of a semiconductor device.

First, the semiconductor wafer 4 is pressure-bonded to the semiconductor wafer attaching portion 3a of the adhesive layer 3 of the ‧ die-bonding film 10, and then held and fixed (attachment step). This step is performed by pressing with a pressing means such as a pressure roller.

Next, the semiconductor wafer 4 is cut and diced by a dicing blade to obtain a semiconductor wafer 5. The cutting method is not particularly limited. Preferably, after the cutting blade A is cut into half the thickness of the semiconductor wafer 4, the semiconductor wafer 4 and the adhesive are cut at least by the cutting blade B having a smaller blade width than the cutting blade A. Layer 3 method (step cut).

As the cutting blade, a blade in which diamond particles are embedded in a resin is preferable.

The blade thickness of the cutting blade is as thin as possible, and a blade having a blade thickness of about 15 to 30 μm is often used. This is because the narrower the dicing line, the more the number of wafers that can be fabricated from one semiconductor wafer 4. This tendency is more pronounced when a smaller semiconductor wafer 5 is produced from a semiconductor wafer 4 having a large number of dicing lines.

The cutting blade is gradually worn during cutting, so the amount of cutting edge determines the life of the cutting blade.

When the cutting blade is thin, the strength of the cutting blade becomes weak, so that the strength cannot be maintained without reducing the amount of cutting of the cutting blade, and as a result, the life of the cutting blade becomes short. On the other hand, when the amount of the blade is excessively large, the cutting blade is broken during the cutting, or the cutting blade is deformed during the cutting to cause cracks and chipping of the wafer. Therefore, the thin cutting blade preferably has an edge amount of 400 to 1000 μm.

In order to peel off the semiconductor wafer 5 which is subsequently fixed to the dicing die-bonding film 10, the semiconductor wafer 5 is picked up. The method of picking up is not particularly limited, and various conventionally known methods can be employed. For example, a method in which each of the semiconductor wafers 5 is lifted by a needle from the side of the dicing die-bonding film 10, and the semiconductor wafer 5 that is lifted up is picked up by a pick-up device.

Here, in the case where the adhesive layer 2 is of an ultraviolet curing type, the pickup layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force of the adhesive layer 2 to the adhesive layer 3 is lowered, and peeling of the semiconductor wafer 5 becomes easy. As a result, the semiconductor wafer 5 can be picked up without damage. The conditions such as the irradiation intensity and the irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be appropriately set as necessary.

The picked semiconductor wafer 5 is then fixed to the object body 6 (wafer mounting) via the adhesive layer 3. The wafer mounting temperature is not particularly limited and is, for example, 80 to 150 °C.

Next, the semiconductor wafer 5 and the object 6 are bonded by heat-treating the adhesive layer 3. The temperature of the heat treatment is preferably 80 ° C or higher, more preferably 170 ° C or higher. The temperature of the heat treatment is preferably 200 ° C or lower, more preferably 180 ° C or lower. When the temperature of the heat treatment is in the above range, it can be satisfactorily continued. In addition, the time of the heat treatment can be appropriately set.

Next, the front end of the terminal portion (internal lead) of the body 6 to be placed is performed A wire bonding step electrically connected to the electrode pads (not shown) on the semiconductor wafer 5 by the bonding wires 7. As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The temperature at the time of wire bonding is preferably 80 ° C or higher, more preferably 120 ° C or higher, and the temperature is preferably 250 ° C or lower, more preferably 175 ° C or lower. In addition, the heating time is performed for a few seconds to several minutes (for example, 1 second to 1 minute). The wire connection is performed by using the vibration energy obtained by the ultrasonic wave and the pressure contact energy obtained by the applied pressure in a state of being heated to the aforementioned temperature range.

Next, a sealing step of sealing the semiconductor wafer 5 with the sealing resin 8 is performed. This step is performed to protect the semiconductor wafer 5 and the bonding wires 7 mounted on the object 6 . This step is carried out by molding a resin for sealing in a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is preferably 165 ° C or higher, more preferably 170 ° C or higher, and the heating temperature is preferably 185 ° C or lower, more preferably 180 ° C or lower.

The seal may be further heated as needed (post-cure step). Thereby, the sealing resin 8 which is insufficiently cured in the sealing step can be completely cured. The heating temperature can be set as appropriate.

As described above, the semiconductor device can be manufactured by the following method. That is, the method includes the following steps (I) to (IV): step (I), bonding the adhesive layer 3 of the ‧ grain bonded film 10 and the semiconductor wafer 4; step (II), cutting the semiconductor crystal Circle 4, forming a semiconductor wafer 5; step (III), picking up the semiconductor wafer 5 formed by the step (II) together with the adhesive layer 3; and step (IV), by step (III) The picked semiconductor wafer 5 is attached to the object body 6 via the adhesive layer 3 wafer.

[Examples]

Hereinafter, the present invention will be described in detail by way of examples, but the invention should not be construed as limited to

The components used in the examples will be described.

Alumina filler 1: DAW-03 (spherical alumina filler, average particle diameter: 5.1 μm, specific surface area: 0.5 m ² /g) manufactured by Electrochemical Industry Co., Ltd.

Alumina filler 2: ASFP-20 manufactured by the Electrochemical Industry Co., Ltd. (spherical alumina filler, average particle diameter: 0.3 μm, specific surface area: 12.5 m ² /g)

Alumina filler 3: AO802 manufactured by Admatechs Co., Ltd. (spherical alumina filler, average particle diameter: 0.7 μm, specific surface area: 7.5 m ² /g)

Acrylic Polymer 1: Teisanresin SG-70L manufactured by Nagase ChemteX Corporation (acrylic copolymer, Mw: 900,000, glass transition temperature: -13 ° C)

Acrylic Polymer 2: Teisanresin SG-P3 manufactured by Nagase ChemteX Corporation (acrylic copolymer, Mw: 850,000, glass transition temperature: 12 ° C)

Phenolic resin: MEH-7851H (phenolic resin, Mw: 1580) manufactured by Minghe Chemical Co., Ltd.

Epoxy resin: JER827 (bisphenol A type epoxy resin, Mw: 370) manufactured by Mitsubishi Chemical Corporation

Decane coupling agent: KBM-403 (3-glycidoxypropyltrimethoxydecane) manufactured by Shin-Etsu Chemical Co., Ltd.

The surface treatment method of the alumina filler will be described.

The alumina fillers 1 to 3 were surface-treated with a decane coupling agent to obtain surface-treated alumina fillers 1 to 3. The surface treatment was carried out by a dry method and treated with a decane coupling agent in an amount shown by the following formula.

Handling amount of decane coupling agent = (weight of alumina filler (g) × specific surface area of alumina filler (m ² /g)) / minimum coated area of decane coupling agent (m ² /g)

Minimum coated area of decane coupling agent (m ^{2 /} g) = 6.02 × 10 ²³ × 13 × 10 ^-20 / molecular weight of decane coupling agent

[Examples 1 to 6 and Comparative Examples 2 to 6] (Production of die bond film (adhesive layer))

According to the compounding ratio described in Table 1, the surface-treated alumina filler, acrylic polymer, phenol resin, and epoxy resin were placed in a 150 mL polyethylene (PE) container, and a self-rotating revolution mixer was used (( Manufactured by THINKY, ARE-310) was stirred at 2000 rpm for 4 minutes. Next, methyl ethyl ketone (MEK) was added, and the mixture was further stirred at 2000 rpm for 5 minutes to obtain a solution of an adhesive composition suitable for coating. Then, the adhesive composition solution was filtered using a 400 mesh (mesh 46 μm) twill SUS mesh, and the filtrate was applied to a thickness of the organic enamel release treatment. A 50 μm release-treated film (release liner) formed of a polyethylene terephthalate film was then dried at 130 ° C for 2 minutes to obtain a die-bonded film (thickness is shown in Table 1).

(production of cut film)

In a reaction vessel equipped with a cooling tube, a nitrogen gas introduction tube, a thermometer, and a stirring device, 80 parts of 2-ethylhexyl acrylate (sometimes referred to as "2EHA") and 2-hydroxyethyl acrylate (sometimes called "HEA") 20 parts and 65 parts of toluene were subjected to a polymerization treatment at 61 ° C for 6 hours in a nitrogen gas stream to obtain an acrylic polymer X.

24.1 parts of 2-methacryloxyethyl isocyanate (sometimes referred to as "MOI") was added to 100 parts of the acrylic polymer X (90 mol% relative to HEA) in an air stream at 50 ° C The addition reaction treatment was carried out for 48 hours to obtain an acrylic polymer Y.

Next, 3 parts of a polyisocyanate compound (trade name "CORONATE L", manufactured by Nippon Polyurethane Industry Co., Ltd.), and a heat-expandable microsphere as a foaming agent (trade name "Microsphere F" were added to 100 parts of the acrylic polymer Y. -50D", manufactured by Matsumoto Oil & Fats Co., Ltd.; foaming initiation temperature: 120 ° C) 35 parts, and photopolymerization initiator (trade name "Irgacure 651", manufactured by Ciba Specialty Chemicals Inc.) 5 parts, preparation of active energy ray curing An adhesive solution for a heat-expandable adhesive.

Next, an adhesive of an active energy ray-curable heat-expandable adhesive is applied onto a substrate (polypropylene) made of polypropylene having a thickness of 100 μm. The solution was then dried to form an adhesive layer having a thickness of 10 μm on the substrate.

Further, only a portion corresponding to the wafer attaching portion of the adhesive layer was irradiated with ultraviolet rays of 500 mJ/cm ² (accumulated amount of ultraviolet light) to prepare a cut film in which the corresponding portion was ultraviolet-cured.

(Production of dicing/chip bonding film)

A die-bonding film was transferred onto the adhesive layer of the dicing film to form a diced die-bonding film.

[Comparative Example 1]

A dicing die-bonding film was produced in the same manner as in Example 1 except that the method of producing the die-bonding film was changed.

(Production of die-bonding film)

The acrylic polymer, the phenol resin, and methyl ethyl ketone (MEK) were placed in a plastic cup container according to the compounding ratios shown in Table 1, and stirred at 3000 rpm for 4 minutes using a dispersing device to obtain an adhesive composition solution. Then, the adhesive composition solution was filtered using a 400 mesh (mesh 46 μm) twill SUS mesh, and the filtrate was applied to an organic germanium release-treated 50 μm thick polyethylene terephthalate film. The film was treated with a release film (release liner), and then dried at 130 ° C for 2 minutes to obtain a die-bonding film.

〔Evaluation〕

The following evaluation was performed using the obtained diced die-bonding film. The results are shown in Table 1.

(blade wear amount)

The back side of the bare wafer was ground using a grinding device (DGP-8760 manufactured by DISCO) until the thickness of the bare wafer (8 inch diameter, thickness 750 μm) reached 100 μm. A bare enamel wafer (thickness 100 μm, 8 inches) was attached to the die-bonding film (adhesive layer) of the diced die-bonding film at a pressure of 10 m/min and 0.15 MPa at 60 ° C using a laminator. Then, it was attached to a cutting ring and subjected to step cutting using Dicer (DFD6760) manufactured by DISCO.

Hereinafter, the step cutting will be described with reference to Figs. 4 and 5 .

The blade height was set to the first cutting blade 21 (Z1 blade) so as to cut into the bare wafer 24 to a depth of 50 μm, and the bare wafer 24 was cut by 100 m at a speed of 50 mm/sec and a rotation speed of 40,000 rpm (refer to FIG. 4). Then, the second cutting blade 23 (Z2 blade) was set so as to cut into the substrate 1 at a depth of 10 μm, and cut 100 m along the slit 22 at a speed of 50 mm/sec and a rotation speed of 45,000 rpm, and the bare wafer 24 and the adhesive were used. Layer 3 is cut (see Fig. 5). In addition, regarding the amount of washing water, the cooler, the shower, and the spray were each set to 1 L/min.

As the Z1 blade, 203O-SE 27HCDD manufactured by DISCO (share) was used.

The specifications of the Z1 blade are described below.

203O-SE 27HCDD manufactured by DISCO

Concentration (concentration of diamond particles): standard concentration

Particle size (diameter of diamond particles): #3500

Binder: Standard

Base shape: sharp edge base

Inner and outer diameter dimensions: outer diameter 55.56mm (diameter), inner diameter 19.05mm (diameter)

Particle size symbol: C

The amount of blade: 0.76~0.89mm

Cutting width (blade width): 0.030~0.035mm

As the Z2 blade, 203O-SE 27HCBB was used.

The specifications of the Z2 blade are described below.

203O-SE 27HCBB manufactured by DISCO

Concentration (concentration of diamond particles): standard concentration

Particle size (diameter of diamond particles): #3500

Binder: Standard

Base shape: sharp edge base

Inner and outer diameter dimensions: outer diameter 55.56mm (diameter), inner diameter 19.05mm (diameter)

Particle size symbol: C

The amount of blade: 0.51~0.64mm

Cutting width (blade width): 0.020~0.025mm

The amount of wear of the Z2 blade was measured by a contact type blade position alignment function of a cutting device (DFD6361, manufactured by DISCO).

(with or without burr (1))

The cutting was carried out in the same manner as the method described in the blade abrasion amount except for cutting 300 m. The singulated wafer with an adhesive (wafer with an adhesive) was peeled off from the dicing film, and the dicing line was observed with an optical microscope. The case where the burr-like foreign matter having a length of 20 μm or more was produced was judged as ×, and the case where the foreign matter was less than 20 μm or the absence of the burr-like foreign matter was judged as ○.

(with or without burr (2))

The cutting was carried out in the same manner as the method described in the blade abrasion amount except for cutting 300 m. The wafer with the adhesive was peeled off from the self-cut film, and the intersection of the cut lines was observed with an optical microscope. The observation position was 5 in total for each bare wafer, and one position was observed near the center, and four places were observed near the outer periphery of the wafer (within 5 cm from the outer circumference). The position where burrs of 100 μm or more were generated in a total of five places was counted. In Table 1, "0/5" indicates that no burrs of 100 μm or more were produced at five places. In Table 1, "5/5" indicates that burrs of 100 μm or more were produced at five places.

Regarding Comparative Example 1 in which the alumina filler was not compounded in the adhesive layer, the blade abrasion amount was too small, the sharpness of the blade was lowered, and burrs were generated. Further, in Comparative Examples 2 and 3 in which the thickness of the adhesive layer was large, the amount of blade wear was too large, and the occurrence of burrs could not be evaluated. In Comparative Example 4 in which the thickness of the adhesive layer was small, the blade abrasion amount was too small, and burrs were generated. In Comparative Example 5 in which the alumina filler was small, the blade abrasion amount was too small, and burrs were generated. Further, in Comparative Example 6 in which the alumina filler was large, the bare enamel wafer could not be attached to the adhesive layer, and the amount of abrasion and the occurrence of burrs could not be evaluated.

On the other hand, regarding Examples 1 to 6 in which the alumina filler is compounded in the adhesive layer and the thickness of the adhesive layer/the total thickness of the substrate and the adhesive layer is designed to a specific range, the blade wear amount can be optimized. It can suppress the generation of burrs.

Claims (3)

A dicing ‧ die-bonding film which is a dicing die-bonding film in which a substrate, an adhesive layer and an adhesive layer are sequentially laminated, wherein a bare twin crystal having a thickness of 100 μm is adhered to the adhesive layer In a circular state, after the first cutting blade cuts the bare wafer by 100 m with a plunging depth of 50 μm, along the slit of the first cutting blade, the second cutting blade will at least reach the plunging depth of the adhesive layer The second cutting blade when the bare enamel wafer and the adhesive layer are cut 100m has an abrasion amount of 20 to 200 μm, and the second cutting blade has a blade width smaller than a blade width of the first cutting blade The slit forming conditions by the first cutting blade were: a speed of 50 mm/sec, a rotational speed of 40,000 rpm, and a cutting condition by the second cutting blade: a speed of 50 mm/sec and a rotational speed of 45,000 rpm. The dicing die-bonding film according to claim 1, wherein the thickness of the adhesive layer / the total thickness of the substrate and the adhesive layer is from 0.045 to 0.9. The ‧ grain bonded film according to claim 1 or 2, wherein the adhesive layer comprises a spherical alumina filler as an abrasive, and the content of the spherical alumina filler in the adhesive layer is 60~88% by weight.