CN103525338B - Semiconductor device adhesive compound, semiconductor device adhesive foil, the adhesive foil with cutting film, the manufacture method and semiconductor device of semiconductor device - Google Patents

Semiconductor device adhesive compound, semiconductor device adhesive foil, the adhesive foil with cutting film, the manufacture method and semiconductor device of semiconductor device Download PDF

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Publication number
CN103525338B
CN103525338B CN201310284712.6A CN201310284712A CN103525338B CN 103525338 B CN103525338 B CN 103525338B CN 201310284712 A CN201310284712 A CN 201310284712A CN 103525338 B CN103525338 B CN 103525338B
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semiconductor device
adhesive
weight
foil
adhesive foil
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CN103525338A (en
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菅生悠树
大西谦司
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Nitto Denko Corp
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Nitto Denko Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/304—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)
  • Laminated Bodies (AREA)

Abstract

The present invention relates to semiconductor device adhesive compound, semiconductor device adhesive foil, manufacture method and semiconductor device with the cutting adhesive foil of film, semiconductor device.The present invention provides the semiconductor device adhesive compound that can manufacture the semiconductor device that space is few, reliability is high, semiconductor device adhesive foil and the adhesive foil with cutting film.The present invention relates to a kind of semiconductor device adhesive compound, 175 DEG C of loss tangent (tan δ) of the semiconductor device adhesive compound in the Measurement of Dynamic Viscoelasticity after 175 DEG C of heating 1 hour is 0.2~0.6.

Description

Semiconductor device adhesive compound, semiconductor device adhesive foil, with cutting Cut the adhesive foil of film, the manufacture method of semiconductor device and semiconductor device
Technical field
The present invention relates to semiconductor device adhesive compound, semiconductor device adhesive foil, with cutting film Adhesive foil, the manufacture method and semiconductor device of semiconductor device.
Background technology
In recent years semiconductor packages, it is (double by DIP for the miniaturization of encapsulation, the purpose of the high-density installation of function Straight cutting encapsulates) it is that the insertion mount type of representative is transitioned into the surface installing type that BGA (ball grid array) is representative.
In the manufacture of these semiconductor packages, semiconductor chip is gluing fixed to adherends such as lead frame or built-in inserted plates When upper, (chip engagement) material was pasted using chip sometimes.In addition, for the purpose of high capacity, by semiconductor chip stack When folded (overlapping), chip adhesive material is also used sometimes.
But, a few micrometers of bumps on the adherend such as built-in inserted plate surface be present, even if using chip adhesive material, can not The bumps on adherend surface are fully buried, space is produced between adherend and chip adhesive material, semiconductor package be present The problem of reliability decrease of dress (such as patent document 1).
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2008-231366 publications
The content of the invention
The present invention in view of foregoing problems and found, its object is to provide to manufacture that space is few, reliability is high partly leads The semiconductor device adhesive compound of body device, semiconductor device adhesive foil and with the gluing thin of cutting film Film.
The present inventor is studied to solve above-mentioned problem of the prior art, is as a result found, by by resin seal The loss tangent (tan δ) at general temperature (175 DEG C) during process is adjusted to specifically be worth, and utilizes the note of sealing resin Enter pressure, semiconductor device can be buried the bumps on adherend surface well with adhesive compound, and complete this Invention.
That is, the present invention relates to a kind of semiconductor device adhesive compound, the semiconductor device adhesive compound 175 DEG C of the loss tangent (tan δ) in Measurement of Dynamic Viscoelasticity after being heated 1 hour at 175 DEG C is 0.2~0.6.
It is specific by the way that the loss tangent (tan δ) at the general temperature (175 DEG C) during resin seal process is adjusted to Value, using the injection pressure of sealing resin, semiconductor device adhesive compound can be by the concavo-convex good of adherend surface Bury well, the generation in space can be suppressed, the high semiconductor device of reliability can be manufactured.
The loss tangent (tan δ) after being heated 1 hour at 175 DEG C is defined in the present invention.This it is envisaged that：To In the manufacture for the semiconductor device that semiconductor chip stacks, filled by chip adhering processes and wire bond process to be applied to semiconductor Put the thermal history with adhesive compound.In recent years, for the purpose of high capacity, the stacking number increase of chip, therefore chip Adhering processes and the increase of wire bond process.In the present invention, due to contemplating these thermal histories, therefore in chip adhering processes and wire bond work , can also even if semiconductor device is exposed to high temperature for a long time with adhesive compound in the resin seal process carried out after sequence The bumps on adherend surface are buried well, the generation in space can be suppressed, the high semiconductor device of reliability can be manufactured.
Loss tangent (tan δ) is preferably with 10 DEG C/min of heating while frequency 1Hz shear strain is applied Velocity determination.
After 175 DEG C are heated 5 hours, the loss tangent (tan δ) in Measurement of Dynamic Viscoelasticity reaches maximum temperature Preferably -30~75 DEG C.
Condition as 5 hours is heated at 175 DEG C, it is contemplated in the manufacture for the semiconductor device for stacking semiconductor chip In chip adhering processes, the thermal history of wire bond process and resin seal process, and the composition is defined in these processes The loss tangent (tan δ) of semiconductor device adhesive compound reaches maximum temperature range afterwards.According to the structure Into in -30~75 DEG C of the routine use temperature range of semiconductor device, good vibration retentivity being obtained, can be subtracted The failure of semiconductor device obtained by few.
Relative to the parts by weight of organic resin constituent 100, the content of thermally activated latent curing catalyst is preferably 0.05 Below parts by weight.During for below 0.05 parts by weight, semiconductor device will not be pasted with the solidification of adhesive compound by chip The influence of process and wire bond process and excessively carry out, 175 DEG C of loss tangent (tan δ) can be suitably adjusted to 0.2 ~0.6 scope, the bumps on adherend surface can be buried well.
The content of acrylic resin in the weight % of organic resin constituent 100 is preferably 60~100 weight %.Thus, may be used So that the bumps on adherend surface to be buried well, the generation in space can be suppressed, the high semiconductor dress of reliability can be manufactured Put.
The invention further relates to a kind of semiconductor device adhesive foil, the semiconductor device adhesive foil adds at 175 DEG C 175 DEG C of loss tangent (tan δ) in Measurement of Dynamic Viscoelasticity of the heat after 1 hour is 0.2~0.6.
Semiconductor device adhesive foil is pasted film preferably as chip and used.
The invention further relates to a kind of adhesive foil with cutting film, wherein, it is laminated with semiconductor on cutting film Device adhesive foil.
, will be partly with adhesive foil including the use of semiconductor device the invention further relates to a kind of manufacture method of semiconductor device Conductor chip chip pastes the process on adherend.
The invention further relates to the semiconductor device obtained by previous building methods.
Brief description of the drawings
Fig. 1 is the schematic sectional view of the adhesive foil with cutting film of an embodiment of the invention.
Fig. 2 is the schematic sectional view of the adhesive foil with cutting film of another embodiment of the invention.
Fig. 3 is the figure for illustrating a kind of manufacture method of the semiconductor device of the present invention.
Label declaration
1 base material
2 adhesive phases
3rd, 3 ' adhesive foils (heat curing-type adhesive foil)
4 semiconductor wafers
5 semiconductor chips
6 adherends
7 bonding wires
8 sealing resins
10th, 12 adhesive foil with cutting film
11 cutting films
Embodiment
The adhesive compound of the present invention, 175 DEG C of the damage in Measurement of Dynamic Viscoelasticity after being heated 1 hour at 175 DEG C It is more than 0.2, preferably more than 0.25 to consume angle tangent value (tan δ).For more than 0.2 when, can be good by the bumps on adherend surface Bury on ground.
175 DEG C of the loss tangent (tan δ) in Measurement of Dynamic Viscoelasticity after being heated 1 hour at 175 DEG C is 0.6 Hereinafter, preferably less than 0.55.For less than 0.6 when, can by adherend surface bumps bury well.It is furthermore it is possible to good Ground carries out wire bond.
The loss tangent (tan δ) can be contained by the content of thermally activated latent curing catalyst, crosslinking agent The glass transition temperature etc. of amount, the content of acrylic resin, the weight average molecular weight of acrylic resin, acrylic resin It is controlled.
In addition, 175 DEG C heating 1 hour after Measurement of Dynamic Viscoelasticity in 175 DEG C of loss tangent (tan δ), Can be while frequency 1Hz shear strain be applied to adhesive compound with 10 DEG C/min of determination of heating rate.Specifically For, it can be determined by the method described in embodiment.
The adhesive compound of the present invention usually contains organic resin constituent.As organic resin constituent, third can be enumerated The thermoplastic resins such as olefin(e) acid resinoid, thermosetting resin etc..
From ionic impurity is few, heat resistance is high, the reliability of semiconductor element can be ensured from the viewpoint of, it is of the invention Adhesive compound preferably comprises acrylic resin.
As the acrylic resin, it is not particularly limited, can enumerate has carbon atom with one or more Number is below 30, particularly the acrylate of the straight or branched alkyl of carbon number 4~18 or methacrylate are composition Polymer (acrylic polymer) etc..As the alkyl, can enumerate for example：Methyl, ethyl, propyl group, isopropyl, positive fourth It is base, the tert-butyl group, isobutyl group, amyl group, isopentyl, hexyl, heptyl, cyclohexyl, 2- ethylhexyls, octyl group, iso-octyl, nonyl, different Nonyl, decyl, isodecyl, undecyl, lauryl, tridecyl, myristyl, stearyl, octadecyl or eicosane Base etc..
In addition, as the other monomers for forming the polymer, it is not particularly limited, can enumerates for example：List containing carboxyl Body for example acrylic acid, methacrylic acid, carboxyethyl acrylates, acrylic acid carboxyl pentyl ester, itaconic acid, maleic acid, fumaric acid or bar Beans acid etc.；Anhydride monomers such as maleic anhydride or itaconic anhydride etc.；Hydroxyl monomer such as (methyl) 2-Hydroxy ethyl acrylate, (first Base) 2-hydroxypropyl acrylate, (methyl) acrylic acid -4- hydroxybutyls, the own ester of (methyl) acrylic acid -6- hydroxyls, (methyl) third Olefin(e) acid -8- hydroxyls monooctyl ester, (methyl) acrylic acid -10- hydroxyls last of the ten Heavenly stems ester, (methyl) acrylic acid -12- hydroxylaurics ester or acrylic acid (4- Hydroxymethyl-cyclo-hexyls) methyl esters etc.；Monomer containing sulfonic group such as styrene sulfonic acid, allyl sulfonic acid, 2- (methyl) acrylamide Base -2- methyl propane sulfonic acids, (methyl) acryamidopropanesulfonic acid, (methyl) acrylic acid sulphur propyl ester or (methyl) acryloxy naphthalene Sulfonic acid etc.；Or phosphorous acid-based monomers such as acryloyl phosphoric acid -2- hydroxy methacrylates etc..
In the acrylic resin, preferable weight-average molecular weight is more than 100,000 resin, more preferably 300,000~3,000,000 Resin, further preferred 500,000~2,000,000 resin.Because when in the number range, adhesivity and heat resistance are excellent It is good.In addition, weight average molecular weight is measured using GPC (gel permeation chromatography), and converted by polystyrene to calculate The value gone out.
The glass transition temperature of acrylic resin is preferably more than -50 DEG C, more preferably more than -30 DEG C.In addition, propylene The glass transition temperature of acid resin is preferably less than 50 DEG C, more preferably less than 30 DEG C.The vitrifying of acrylic resin turns When temperature is in the scope, the bumps on adherend surface can be buried well.
The glass transition temperature of acrylic resin, the maximum heat determined by using differential scanning calorimetry (DSC) (DSC) Temperature during absworption peak and obtain.Specifically, using differential scanning calorimetry (DSC) ((TA instruments) TA Instruments company systems " Q-2000 " made), will be to be measured at a temperature of about 50 DEG C higher than the glass transition temperature of the sample of prediction (predicted temperature) Sample heats 10 minutes, is pre-processed at a temperature of being then cooled to 50 DEG C lower than predicted temperature, then, under nitrogen atmosphere, Heated up with 5 DEG C/min of programming rate and determine heat absorption starting point temperature, as glass transition temperature.
In the adhesive compound of the present invention, the content of acrylic resin is preferably in the weight % of organic resin constituent 100 More than 60 weight %, more preferably more than 70 weight %.For more than 60 weight % when, adhesive compound can be by adherend surface Bumps are buried well.The upper content limit of acrylic resin is not particularly limited, preferably below 95 weight %, more preferably 90 weights Measure below %.For below 95 weight % when, can realize simultaneously the characteristic of acrylic resin composition with except acrylic resin into The characteristic of organic resin constituent beyond point.
The adhesive compound of the present invention can contain thermosetting resin.By using thermosetting resin, glue can be improved The heat resistance of adhesive composition.
As the thermosetting resin, can enumerate phenolic resin, amino resins, unsaturated polyester resin, epoxy resin, Polyurethane resin, polyorganosiloxane resin or thermoset polyimide resin etc..These resins can be used alone or two kinds with On be applied in combination.The poor epoxy resin of the ionic impurity of particularly preferred corrosion resistant semiconductor element etc..In addition, as ring The curing agent of oxygen tree fat, preferably phenolic resin.
As long as the epoxy resin is then not particularly limited generally as the epoxy resin that adhesive compound uses, can With using for example：Bisphenol A-type, bisphenol-f type, bisphenol S type, bmminated bisphenol-A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene Type, fluorenes type, phenol novolak type, ortho cresol novolak type, three (hydroxyphenyl) methane types, four (hydroxyphenyl) ethane types etc. are double Functional epoxy resins or polyfunctional epoxy resin or hydantoins type, triglycidyl isocyanurate type shrink sweet The epoxy resin such as oleyl amine type.These epoxy resin may be used singly or two or more in combination.In these epoxy resin, Particularly preferred phenolic resin varnish type epoxy resin, biphenyl type epoxy resin, three (hydroxyphenyl) methane type epoxy resin or four (oxybenzenes Base) ethane type epoxy resin.Because：These epoxy resin are reactive good with the phenolic resin as curing agent, and Heat resistance etc. is excellent.
In addition, the phenolic resin works as the curing agent of the epoxy resin, can enumerate for example：Phenol novolac Varnish gum, phenol aralkyl resin, cresol novolac resin, t-butylphenol novolac resin, nonyl phenol phenolic aldehyde The poly- hydroxy benzenes such as the novolak phenolics such as varnish gum, resol-type phenolic resin, poly(4-hydroxystyrene) Ethene etc..These phenolic resin may be used singly or two or more in combination.Particularly preferred benzene in these phenolic resin Phenol novolac resin, phenol aralkyl resin etc..Because the connection reliability of semiconductor device can be improved.
The mixing ratio of the epoxy resin and phenolic resin, such as relative to the epoxy radicals in the epoxy resin ingredient It is appropriate that 1 equivalent, which in a manner of the hydroxyl in phenolic resin is 0.5~2.0 equivalent coordinate,.More preferably 0.8~1.2 works as Amount.That is, because：If both mixing ratios can not carry out sufficient curing reaction, epoxy beyond the scope The characteristic of resin cured matter is easily deteriorated.
In the adhesive compound of the present invention, the content of thermosetting resin is preferably 5 in the weight % of organic resin constituent 100 More than weight %, more preferably more than 10 weight %.For more than 5 weight % when, Thermocurable can be obtained well.Thermosetting resin Content be preferably below 40 weight %, more preferably below 30 weight %.For below 40 weight % when, adhesive compound can be with good The bumps on adherend surface are buried well.
The adhesive compound of the present invention can contain thermally activated latent curing catalyst.As thermally activated latent Property curing catalysts, can be enumerated：Imidazoles such as 2- phenylimidazoles, 2-methylimidazole etc.；Such as two sub- second triamine of amine, isophthalic two Amine etc.；Phosphine such as dialkyl phosphine, trialkyl phosphine, Phenylphosphine etc.；ImidazolesSalt such as 1,3- dialkylimidazoliumsSalt etc.；In addition, It can also enumerateSalt, seasonSalt, boric acidSalt etc..
In the adhesive compound of the present invention, the content of thermally activated latent curing catalyst is more few better, relative to The parts by weight of organic resin constituent 100, preferably below 0.05 parts by weight, more preferably below 0.01 parts by weight, further preferred 0 weight Measure part.During for below 0.05 parts by weight, the solidification of semiconductor device adhesive compound will not by chip adhering processes and The influence of wire bond process and excessively carry out, 175 DEG C of loss tangent (tan δ) can be suitably adjusted to 0.2~0.6 In the range of, the bumps on adherend surface can be buried well.
The adhesive compound of the present invention can contain crosslinking agent.As crosslinking agent it is preferable to use with polymer The polyfunctional compound of the reactions such as the functional group of molecule chain end, more preferably using epoxies crosslinking agent.
In the adhesive compound of the present invention, the content of crosslinking agent is more few better, relative to the weight of organic resin constituent 100 Part, preferably below 0.1 parts by weight, more preferably 0 parts by weight.For 0.1 parts by weight when, adhesive compound can be covered well Bury the bumps on adherend surface.
The adhesive compound of the present invention, preferably comprises filler.Thus, it is possible to the burial to bumps is obtained well Property.As filler, preferably inorganic filler.As inorganic filler, can enumerate for example：Include silica, clay, stone The ceramic-likes such as cream, calcium carbonate, barium sulfate, aluminum oxide, beryllium oxide, carborundum, silicon nitride, aluminium, copper, silver, gold, nickel, chromium, lead, tin, The various inorganic powders of the metal or alloy such as zinc, palladium, solder class and carbon etc..These fillers can be used alone or It is used in combination.Wherein, from considering the reasons why obtaining the burial to bumps well, preferably using silica, Particularly fused silica.
In the adhesive compound of the present invention, the content of filler is preferably 1 relative to the parts by weight of organic resin constituent 100 More than parts by weight, more preferably more than 5 parts by weight.During to be more than 1 parts by weight, heat resistance can be obtained well, can be well Obtain the burial to bumps.The content of filler is preferably below 80 parts by weight, more preferably below 70 parts by weight.For 80 weight When below part, the burial to bumps can be obtained well.
The adhesive compound of the present invention, from the viewpoint of it can prevent corrosion well, can contain (benzo) three Azole.
In the adhesive compound of the present invention, the content of (benzo) triazole type is relative to the parts by weight of organic resin constituent 100 It is preferred that 0.01~15 parts by weight, more preferably 0.05~10 parts by weight, further preferred 0.1~5 parts by weight.Less than 0.01 parts by weight When, it is possible to corrosion-resisting function can not be played suitably.During more than 15 parts by weight, it is possible to influence adhesivity.
The manufacture method of the adhesive compound of the present invention is not particularly limited, for example, foregoing each composition is put into appearance In device, it is dissolved into organic solvent, and stirs, it is hereby achieved that adhesive compound solution.
Organic solvent is not particularly limited, and can use existing known organic solvent, be preferably able to foregoing each composition The organic solvent for equably dissolving, being kneaded or disperseing.As such organic solvent, can enumerate for example：Dimethylformamide, The ketones solvents such as dimethyl acetamide, 1-METHYLPYRROLIDONE, acetone, MEK, cyclohexanone, toluene, dimethylbenzene etc..From drying Speed obtains fast, marked downly from the viewpoint of, preferably using MEK, cyclohexanone etc..
The adhesive compound of the present invention, after 175 DEG C are heated 5 hours, the loss angle tangent in Measurement of Dynamic Viscoelasticity It is preferably specific value that value (tan δ), which reaches maximum temperature,.The temperature is preferably more than -30 DEG C, more preferably more than -25 DEG C, is entered Preferably more than -20 DEG C, particularly preferably more than -15 DEG C of one step.On the other hand, the temperature is preferably less than 75 DEG C, more preferably 70 DEG C Hereinafter, further preferred less than 60 DEG C, particularly preferred less than 50 DEG C.When the temperature is above range, in the day of semiconductor device In normal use temperature range, good vibration retentivity can be obtained, it is possible to reduce the failure of resulting semiconductor device.Separately Outside, the temperature can be determined by the method described in embodiment.
The temperature can pass through glass transition temperature of the glass transition temperature of organic resin constituent or filler etc. It is controlled.
The adhesive compound of the present invention is used for semiconductor device.As long as the adhesive compound of the present invention is used for semiconductor Device is then not particularly limited, and is used preferred to by the adherends such as built-in inserted plate and semiconductor chip gluing (chip stickup). As adherend, built-in inserted plate, lead frame, semiconductor chip etc. can be enumerated.Wherein it is possible to it is irregular to be suitable for surface tool Adherend, the built-in inserted plate of BGA or LGA (land grid array) purposes particularly suitable for single facer etc..
In addition, as semiconductor device, three-dimensional installation obtained from multiple semiconductor chips are laminated can be suitable for Semiconductor device.
The adhesive foil of the present invention, can be manufactured using adhesive composition by usual way.For example, make Adhesive composition solution, the adhesive compound solution is applied to base material partition in a manner of the thickness for reaching certain Upper formation film, then dries the film under prescribed conditions, it is possible thereby to manufacture adhesive foil.Do not have as coating method Especially limitation, can be enumerated for example：Roller coat, silk screen coating, intaglio plate coating etc..In addition, as drying condition, such as drying temperature Spend for 70~160 DEG C, drying time be 1~5 minute in the range of carry out.As base material partition, poly- terephthaldehyde can be used Sour glycol ester (PET), polyethylene, polypropylene utilize fluorine-containing type remover, chain alkyl esters of acrylic acid remover etc. Remover carries out plastic sheeting or paper of surface coating etc..
The adhesive foil of the present invention, 175 DEG C of the loss angle in Measurement of Dynamic Viscoelasticity after being heated 1 hour at 175 DEG C Tangent value (tan δ) is 0.2~0.6.The preferred scope of the loss tangent (tan δ) and the situation one of adhesive compound Sample.
In addition, the adhesive foil of the present invention, after 175 DEG C are heated 5 hours, the loss angle tangent in Measurement of Dynamic Viscoelasticity It is preferably -30~75 DEG C that value (tan δ), which reaches maximum temperature,.The preferred scope of the temperature and the situation one of adhesive compound Sample.
As long as the adhesive foil of the present invention is then not particularly limited for semiconductor device, chip stickup can be suitable as Film, chip back surface protective film etc. use.Here, chip back surface protective film is to utilize face-down bonding by semiconductor chip When being installed on substrate, for the film protected the back side of semiconductor chip (exposed surface of side opposite with substrate) and used.Its In, paste film preferably as chip and use.In addition, the adhesive foil of the present invention can be suitable as the adhesive foil and be laminated to The adhesive foil with cutting film obtained from film is cut to use.
Hereinafter, in case of using adhesive foil as chip, stickup film uses, to the present invention with cutting film Adhesive foil illustrate.
Fig. 1 is the schematic sectional view of the adhesive foil with cutting film of an embodiment of the invention.Fig. 2 is The schematic sectional view of the adhesive foil with cutting film of another embodiment of the invention.
As shown in figure 1, the adhesive foil 10 with cutting film has is laminated with adhesive foil 3 on cutting film 11 Form.Cutting film 11 has the composition that adhesive phase 2 is laminated with base material 1, and adhesive foil 3 is arranged on the adhesive phase 2 On.In addition, the present invention can also be only in workpiece adhesive portion as the adhesive foil 12 with cutting film shown in Fig. 2 Composition formed with adhesive foil 3 '.
Intensity parent of the base material 1 as the adhesive foil 10,12 with cutting film, preferably with ultraviolet (uv) transmission Property.It can enumerate for example：Low density polyethylene (LDPE), linear polyethylene, medium density polyethylene, high density polyethylene (HDPE), extremely-low density gather The polyolefin such as ethene, atactic copolymerized polypropene, block copolymerization polypropylene, homo-polypropylene, polybutene, polymethylpentene, ethene-second (the random, friendship of vinyl acetate copolymer, ionomer resin, ethene-(methyl) acrylic copolymer, ethene-(methyl) acrylate For) copolymer, ethylene-butene copolymer, ethylene-hexene co-polymers, polyurethane, polyethylene terephthalate, poly- naphthalene two The polyester such as formic acid glycol ester, makrolon, polyimides, polyether-ether-ketone, polyimides, PEI, polyamide, Quan Fang Polyamide, polyphenylene sulfide, aromatic polyamides (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, Cellulosic resin, polyorganosiloxane resin, metal (paper tinsel), paper etc..
In addition, the material as base material 1, can enumerate the polymer such as the cross-linking agent of aforementioned resin.The plastic sheeting can Used with not stretching, used after uniaxially or biaxially stretch processing can also be carried out as needed.Using passing through stretch processing etc. And impart the resin sheet of heat-shrinkable, by making the thermal contraction of base material 1 after dicing, can reduce adhesive phase 2 with it is gluing The gluing area of film 3,3 ', so as to easily reclaim semiconductor chip (semiconductor element).
In order to improve with the adaptation of adjoining course, retentivity etc., the surface of base material 1 can implement usual surface treatment, For example, chromic acid processing, ozone exposure, fire exposure, high-voltage electric shock exposure, ionising radiation processing etc. are chemically or physically handled, profit With the coating process of silane coupling agent (such as adhesion substance described later).The base material 1 can be properly selected using of the same race or different The material of species, the material after several materials are blended can also be used as needed.
The thickness of base material 1 is not particularly limited, and can suitably determine, typically about 5 μm~about 200 μm.
The adhesive used in formation as adhesive phase 2, is not particularly limited, it is, for example, possible to use acrylic compounds The in general pressure-sensitive adhesive such as adhesive, rubber adhesive.As the pressure-sensitive adhesive, from semiconductor wafer or glass etc. Evade pollution electronic unit using cleaning washing performance of the organic solvents such as ultra-pure water or alcohol etc. from the viewpoint of, preferably with third The acrylic adhesives of polymer based on alkene acids polymers.
As the acrylic polymer, can enumerate for example：Use (methyl) alkyl acrylate (for example, methyl esters, Ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, secondary butyl ester, the tert-butyl ester, pentyl ester, isopentyl ester, own ester, heptyl ester, monooctyl ester, 2- ethyls Own ester, different monooctyl ester, nonyl ester, last of the ten Heavenly stems ester, isodecyl ester, hendecane ester, dodecane ester, tridecane ester, tetradecane ester, hexadecane ester, ten The carbon number of the alkyl such as eight alkyl esters, eicosane ester is 1~30, the straight or branched alkyl that particularly carbon number is 4~18 Ester etc.) and (methyl) acrylate ester (for example, ring pentyl ester, cyclohexyl etc.) one or more as monomer component Acrylic polymer etc..In addition, (methyl) acrylate represents acrylate and/or methacrylate, (first of the invention Base) all represent identical implication.
In order to improve cohesiveness, heat resistance etc., the acrylic polymer can contain as needed with being capable of same institute State unit corresponding to (methyl) alkyl acrylate or other monomer components of cycloalkanes ester copolymerization.As such monomer component, It can enumerate for example：Carboxyl group-containing monomer such as acrylic acid, methacrylic acid, (methyl) carboxyethyl acrylates, (methyl) acrylic acid Carboxyl pentyl ester, itaconic acid, maleic acid, fumaric acid, crotonic acid etc.；Anhydride monomers such as maleic anhydride, itaconic anhydride etc.；Hydroxyl list Body such as (methyl) 2-Hydroxy ethyl acrylate, (methyl) 2-hydroxypropyl acrylate, (methyl) acrylic acid -4- hydroxybutyls, The own ester of (methyl) acrylic acid -6- hydroxyls, (methyl) acrylic acid -8- hydroxyls monooctyl ester, (methyl) acrylic acid -10- hydroxyls last of the ten Heavenly stems ester, (first Base) acrylic acid -12- hydroxylaurics ester, (methyl) acrylic acid (4- hydroxymethylcyclohexyls) methyl esters etc.；Such as benzene second of monomer containing sulfonic group Alkene sulfonic acid, allyl sulfonic acid, 2- (methyl) acrylamido 2- methyl propane sulfonic acids, (methyl) acryamidopropanesulfonic acid, (methyl) Sulfopropyl acrylate, (methyl) acryloyl-oxy naphthalene sulfonic acids etc.；Phosphorous acid-based monomers such as acryloyl phosphoric acid -2- hydroxy methacrylates etc.； Acrylamide, acrylonitrile etc..These copolymerisable monomer compositions can use one or more.These copolymerisable monomers make Dosage is preferably below the 40 weight % of whole monomer components.
In addition, in order to be crosslinked, the acrylic polymer can also contain polyfunctional monomer etc. and make as needed For comonomer composition.As such polyfunctional monomer, can enumerate for example：Hexylene glycol two (methyl) acrylate, (poly-) ethylene glycol two (methyl) acrylate, (poly-) propane diols two (methyl) acrylate, neopentyl glycol two (methyl) acrylic acid Ester, pentaerythrite two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) propylene Acid esters, dipentaerythritol six (methyl) acrylate, epoxy (methyl) acrylate, polyester (methyl) acrylate, amino first Acid esters (methyl) acrylate etc..These polyfunctional monomers can also use one or more.From viewpoints such as adhesion characteristics Consider, the usage amount of polyfunctional monomer is preferably below the 30 weight % of whole monomer components.
The acrylic polymer can be by the way that the mixture of single monomer or two or more monomers be polymerize to obtain. Polymerization can be carried out by any-modes such as polymerisation in solution, emulsion polymerization, polymerisation in bulk, suspension polymerisations.From preventing to clean quilt The viewpoints such as the pollution of viscous thing consider that the content of preferably low molecular weight substance is few.From this point to consider, the number of acrylic polymer is equal Molecular weight is preferably from about more than 300,000, more preferably from about 400,000~about 3,000,000.
In addition, for the number-average molecular weight of acrylic polymer of polymer etc. based on improving, described adhesive In can also suitably use external crosslinker.The specific means of outside cross-linking method can be enumerated：Add polyisocyanates chemical combination The so-called crosslinking agents such as thing, epoxide, aziridine cpd, melamine class crosslinking agent and the method for reacting it.Make During with external crosslinker, balance of its usage amount according to the base polymer with that should be crosslinked and the use as adhesive are used Way is appropriate to be determined.In general, relative to the parts by weight of base polymer 100, preferably below 5 parts by weight, more preferably match somebody with somebody Close 0.1~5 parts by weight.In addition, as needed, can also be using existing known various in addition to aforesaid ingredients in adhesive The additives such as tackifier, age resister.
Adhesive phase 2 can be formed by Radiation curing adhesive.Radiation curing adhesive passes through ultraviolet etc. The irradiation increase degree of cross linking of radiation, so as to easily reduce its bonding force.For example, by only to the bonding shown in Fig. 2 The part 2a illumination radiation lines corresponding with workpiece adhesive portion of oxidant layer 2, can set the bonding force between other parts 2b Difference.
In addition, solidify radiation-curable adhesive layer 2 by the adhesive foil 3 ' according to Fig. 2, can be easy Ground forms the part 2a that bonding force is remarkably decreased.Due to being pasted with glue on the part 2a of solidification and bonding force decline Viscous film 3 ', therefore the interface of the part 2a of adhesive phase 2 and adhesive foil 3 ' has the property being easily peeled off in pickup Matter.On the other hand, the part of non-illumination radiation line has sufficient bonding force, forms the part 2b.
As it was previously stated, shown in Fig. 1 with cutting film adhesive foil 10 adhesive phase 2 in, by uncured spoke The part 2b that ray curing adhesive is formed bonds with adhesive foil 3, it can be ensured that confining force during cutting.So, Radiation curing adhesive can be used for shaped like chips workpiece (semiconductor chip etc.) with good gluing-stripping balanced support The adhesive foil 3 being affixed on the adherends such as substrate.The adhesive phase 2 of the adhesive foil 12 with cutting film shown in Fig. 2 In, the part 2b can be fixed by paster ring (wafer ring).
The Radiation curing adhesive can use without particular limitation, and there is carbon-to-carbon double bond israds to solidify Property functional group, and show the Radiation curing adhesive of cohesive.As Radiation curing adhesive, example can be illustrated Such as：Radiation curing is combined with the in general contact adhesive such as foregoing acrylic adhesive, rubber adhesive The addition type Radiation curing adhesive of monomer component or oligomer composition.
As the radiation curing monomer component for cooperation, can enumerate for example：Oligourethane, amino Formic acid esters (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylol methane four (methyl) acrylic acid Ester, pentaerythrite three (methyl) acrylate, pentaerythrite four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) Acrylate, dipentaerythritol six (methyl) acrylate, 1,4- butanediols two (methyl) acrylate etc..In addition, radiation It is each that curable oligomer composition can enumerate carbamates, polyethers, polyesters, polycarbonate-based, polybutadiene etc. Kind oligomer, its molecular weight is appropriate in the range of about 100~about 30000.On radiation curing monomer component or The use level of oligomer composition, the bonding force for making adhesive phase can be suitably determined to according to the species of described adhesive layer The amount of reduction.In general, relative to parts by weight of base polymer 100 such as the acrylic polymers for forming adhesive, such as It is the parts by weight of about 5 parts by weight~about 500, the parts by weight of preferably from about 40 parts by weight~about 150.
In addition, as Radiation curing adhesive, except addition type Radiation curing adhesive described above with Outside, can also enumerate using in polymer lateral chain or main chain or based on main chain terminal has a polymer of carbon-carbon double bond The inherent type Radiation curing adhesive of polymer.Inherent type Radiation curing adhesive need not contain or not contain largely There is oligomer composition as low molecular weight compositions etc., therefore oligomer composition etc. will not move in adhesive over time It is dynamic, the adhesive phase of stable Rotating fields can be formed, therefore preferably.
The base polymer with carbon-carbon double bond, it can use with carbon-carbon double bond and have without particular limitation Adhesive polymer.As such base polymer, the polymerization of basic framework is used as preferably using acrylic polymer Thing.As the basic framework of acrylic polymer, the acrylic polymer that foregoing illustrative is crossed can be enumerated.
The method that carbon-carbon double bond is introduced in the acrylic polymer is not particularly limited, and can use various sides Method, the method that carbon-carbon double bond is introduced to polymer lateral chain are easier in MOLECULE DESIGN.It can enumerate for example：To have in advance The monomer of functional group is with after acrylic polymer copolymerization, making with functional group that can be with the functional group reactionses and carbon-carbon double bond Compound be condensed or the method for addition reaction in the case where keeping the radiation curing of carbon-carbon double bond.
As the combination example of these functional groups, can enumerate for example：Carboxyl and epoxy radicals, carboxyl and '-aziridino, hydroxyl With NCO etc..In the combination of these functional groups, consider the easiness of reactive tracing, preferably hydroxyl and NCO Combination.In addition, by the combination of these functional groups, as long as the group of the acrylic polymer with carbon-carbon double bond described in generation Close, then functional group can be excellent in described preferred compositions in any one of acrylic polymer and the compound Select acrylic polymer that there is NCO with hydroxyl, the compound.Now, as with carbon-carbon double bond Isocyanate compound, can enumerate for example：Methacryl isocyanates, 2- methylacryoyloxyethyls isocyanates, Between isopropenyl-bis (alpha, alpha-dimethylbenzyl) based isocyanate etc..In addition, as acrylic polymer, can use will above example The ether such as the hydroxyl monomer or 2- hydroxyethyl vinyl ethers that show, 4- hydroxybutyl vinyl ethers, diethylene glycol monovinyl base ether Polymer obtained from the copolymerization such as class compound.
The inherent type Radiation curing adhesive can be used alone the base polymer with carbon-carbon double bond (particularly acrylic polymer), can also coordinate the radiation curing monomer component in the range of characteristic is not damaged Or oligomer composition.Radiation curing oligomer composition etc. is relative to the parts by weight of base polymer 100 generally in 30 parts by weight In the range of, the preferred scope of 0~10 parts by weight.
In the Radiation curing adhesive, Photoepolymerizationinitiater initiater can be contained when solidifying by ultraviolet etc..Make For Photoepolymerizationinitiater initiater, can enumerate for example：α -one alcohol compound such as 4- (2- hydroxyl-oxethyls) phenyl (2- hydroxyls -2- third Base) ketone, Alpha-hydroxy-α, α '-dimethyl acetophenone, 2- methyl -2- hydroxypropiophenonepreparations, 1- hydroxycyclohexylphenylketones etc.；Benzene second Ketone compounds such as methoxyacetophenone, 2,2- dimethoxy -2- phenyl acetophenones, 2,2- diethoxy acetophenones, 2- methyl - 1- [4- (methyl mercapto) phenyl] -2- morpholinopropane -1- ketone etc.；Benzoin ethers compound such as benzoin ethyl ether, benzoin is different Propyl ether, anisoin methyl ether etc.；Ketal compounds such as dibenzoyl dimethyl ketal etc.；Aromatic sulfonyl class compound such as 2- Naphthalene sulfonyl chloride etc.；Photolytic activity oxime compound such as 1- phenyl -1,2- pentanediones -2- (O- ethoxy carbonyls) oxime etc.；Hexichol first Ketone compounds such as benzophenone, benzoylbenzoic acid, 3,3 '-dimethyl -4- methoxy benzophenones etc.；Thioxanthene ketone class chemical combination Thing such as thioxanthones, CTX, 2- methyl thioxanthones, 2,4- dimethyl thioxanthones, isopropyl thioxanthone, 2,4- dichloro thioxanthenes Ketone, 2,4- diethyl thioxanthones, 2,4- diisopropylthioxanthones etc.；Camphorquinone；Halogenated ketone；Acylphosphine oxide；Acyl phosphonate Deng.The use level of Photoepolymerizationinitiater initiater relative to the parts by weight of base polymer 100 such as acrylic polymer for forming adhesive, The parts by weight of for example, about 0.05 parts by weight~about 20.
In addition, as Radiation curing adhesive, can enumerate for example：In Japanese Unexamined Patent Application 60-196956 publications The photopolymerization such as alkoxy silane disclosed, containing the polyaddition compound with more than 2 unsaturated bonds, with epoxy radicals Property compound and carbonyls, organosulfur compound, peroxide, amine,The rubber of the Photoepolymerizationinitiater initiaters such as salt compounds Glue class adhesive or acrylic adhesives etc..
In the adhesive phase 2 of the radiation curable, it can also contain coloured by illumination radiation line as needed Compound., can be only by illumination radiation line by containing in adhesive phase 2 by illumination radiation line and the compound coloured Colored parts.I.e., it is possible to part 2a corresponding with the workpiece adhesive portion 3a shown in Fig. 1 is coloured.Thus, it is possible to pass through meat Eye directly judges the whether illuminated radiation of adhesive phase 2, can easily identify workpiece adhesive portion 3a, the stickup of workpiece Easily.In addition, when detecting semiconductor element using optical sensor etc., its accuracy of detection is high, so as to picking up in semiconductor element Maloperation is not produced when taking.
By illumination radiation line and the compound that colours, it is colourless or light before illumination radiation line but passes through irradiation Radiation and become coloured compound.As the preferred concrete example of the compound, can enumerating leuco dye, (ロ イ Us contaminate Material).As leuco dye, it is preferable to use usual triphenylmethane, Material of Fluoran, phenothiazines, auramine class, spiro-pyrans Class leuco dye.It can specifically enumerate：3- [N- (p-methylphenyl amino)] -7- anilino fluoranes, 3- [N- (p-methylphenyl) - N- methylaminos] -7- anilino fluoranes, 3- [N- (p-methylphenyl)-N- ethylaminos] -7- anilino fluoranes, 3- lignocaines - 6- methyl -7- anilino fluoranes, crystal violet lactone, 4,4 ', 4 "-three (dimethylamino) triphenylcarbinols, 4,4 ', 4 "-three (diformazans Amino) triphenyl methane etc..
As the developer being preferably used together with these leuco dyes, the phenolic resin used all the time can be enumerated Prepolymer, aromatic derivant carboxylate, the electron acceptor such as atlapulgite, can be by various hairs in addition, when making tone variations Toner is applied in combination.
It is such by illumination radiation line and the compound that colours, be included in spoke after being first dissolved in organic solvent etc. In ray curing adhesive, alternatively, it is also possible in fine powder form comprising in the adhesive.The use ratio of the compound Wish to be below 10 weight %, preferably 0.01~10 weight %, more preferably 0.5~5 weight % in adhesive phase 2.The compound When ratio is more than 10 weight %, the radiation of adhesive phase 2 is irradiated to by the compound taken in excess, therefore the bonding sometimes The part 2a of oxidant layer 2 solidification is insufficient, the insufficient decline of bonding force.On the other hand, in order to fully colour, preferably should The ratio of compound is set as more than 0.01 weight %.
In the case of forming adhesive phase 2 by Radiation curing adhesive, a part for adhesive phase 2 can be entered Row irradiation with radiation causes the part 2a of adhesive phase 2 bonding force<Other parts 2b bonding force.
As the method that the part 2a is formed in described adhesive layer 2, can enumerate：Radiation is formed on base material 1 After line curing adhesive layer 2, to the part 2a partly illumination radiation line make its solidify method.Local radiation shines Penetrate can be by carrying out formed with the photomask with the corresponding pattern such as the part 3b beyond workpiece adhesive portion 3a.In addition, Method that point-like irradiation ultraviolet is solidified etc. can be enumerated.The formation of radiation-curable adhesive layer 2 can pass through by The radiation-curable adhesive layer being arranged on partition is transferred on base material 1 to carry out.Local radiation curing can also The radiation-curable adhesive layer 2 being arranged on partition is carried out.
In addition, in the case of forming adhesive phase 2 by Radiation curing adhesive, can use to base material 1 extremely The whole of part beyond few one side, corresponding with workpiece adhesive portion 3a part or the local base material for carrying out shading, at this Irradiation with radiation is carried out after forming radiation-curable adhesive layer 2 on base material, makes part corresponding with workpiece adhesive portion 3a Solidification, so as to form the part 2a of bonding force decline., can be by printing or steaming in support film as light screening material The material that plating can turn into photomask makes.By the manufacture method, can effectively manufacture the present invention carries cutting The adhesive foil 10 of film.
In addition, when producing because of oxygen solidification obstacle during irradiation with radiation, preferably by any means from radiation curable The surface isolating oxygen (air) of adhesive phase 2.As this method, can enumerate for example：With partition by the table of described adhesive layer 2 The method of face covering carries out method of irradiation of ultraviolet israds etc. in nitrogen atmosphere.
The thickness of adhesive phase 2 is not particularly limited, from realizing the defect and adhesive layer that prevent chip cutting face simultaneously The viewpoint consideration such as fixed holding, preferably from about 1 μm~about 50 μm.It is preferred that 2 μm~30 μm, more preferably 5 μm~25 μm.
The thickness (being gross thickness in the case of layered product) of adhesive foil 3,3 ' is not particularly limited, preferably 1~50 μm, more It is preferred that 10~40 μm.
The adhesive foil 3,3 ' of the adhesive foil 10,12 with cutting film, is preferably protected (not shown) by partition. Partition has the function as the protection materials for protecting adhesive foil 3,3 ' before practical application is supplied.In addition, partition also may be used Using as by adhesive foil 3,3 ' to adhesive phase 2 transfer when supporting base material use.Partition is to the glue for cutting film Peeled off when pasting workpiece on the adhesive foil 3,3 ' of viscous film.As partition, polyethylene terephthalate can be used (PET), polyethylene, polypropylene, pass through the removers such as fluorine-containing type remover, chain alkyl acrylic ester type remover carry out surface Plastic sheeting, paper after coating etc..
The adhesive foil 10,12 with cutting film of present embodiment, such as make in the following way.
First, base material 1 can be film-made by existing known film-forming method.As the film-forming method, can illustrate for example： Roll film method, the tape casting in organic solvent, the blowing extrusion molding in enclosed system, T-shaped extrusion, coetrusion, Dry lamination method etc..
Then, coating adhesive composition solution forms film on base material 1, then under prescribed conditions does the film Dry (heat cross-linking as needed) and form adhesive phase 2.As coating method, can enumerate for example：Roller coat, silk screen coating, Intaglio plate coating etc..In addition, as drying condition, can be for example：80~150 DEG C of drying temperature, 0.5~5 minute drying time In the range of carry out.Alternatively, it is also possible to be incited somebody to action on partition after coating adhesive composition formation film under the drying condition Dried coating film forms adhesive phase 2.Then, adhesive phase 2 is pasted on base material 1 together with partition.Thus, cutting is made Film 11.
Then, partition is peeled off from cutting film 11, adhesive phase 2 and adhesive foil 3,3 ' is pasted together.It is viscous Patch can for example be carried out by crimping.Now, laminating temperature is not particularly limited, such as preferably 30~50 DEG C, more preferably 35 ~45 DEG C.In addition, line pressure is it is not also specifically limited, such as preferably 0.1~20kgf/cm, more preferably 1~10kgf/cm.Thus, Obtain the adhesive foil with cutting film of present embodiment.
(manufacture method of semiconductor device)
The present invention semiconductor device manufacture method, including the use of adhesive foil by semiconductor chip chip paste by Process on viscous thing.
Hereinafter, it is right in case of carrying the manufacture semiconductor device of adhesive foil 10 of cutting film to use with reference to figure 3 The manufacture method of the semiconductor device of the present invention illustrates.
First, the semiconductor for the adhesive foil 3 semiconductor wafer 4 being crimped in the adhesive foil 10 with cutting film On chip adhesive portion 3a, and make its gluing holding and fix (adhering processes).This process is squeezed using extruding means such as crimping rollers Press to carry out.Now, sticking temperature is preferably 35~80 DEG C, more preferably 40~75 DEG C.In addition, pressure is preferably 1 × 105~1 ×107Pa, more preferably 2 × 105~8 × 106Pa.In addition, it is preferably 1.5~60 seconds to paste the time, more preferably 2~50 seconds.
Then, the cutting of semiconductor wafer 4 is carried out.Thus, by semiconductor wafer 4 be cut into given size and panelization, Make semiconductor chip 5.Cutting is for example conventionally carried out from the circuit face side of semiconductor wafer 4.In addition, this process In, it is for instance possible to use being cut into cutting mode adhesive foil 10, referred to as cutting entirely with cutting film etc..This work The cutter device used in sequence is not particularly limited, and can use existing known cutter device.In addition, semiconductor wafer is by band There is the 10 gluing fixation of adhesive foil of cutting film, therefore chip defect can be suppressed or chip disperses, and half can be suppressed The breakage of conductor chip 4.
In order to peel off by the semiconductor chip of the 10 gluing fixation of adhesive foil with cutting film, semiconductor chip is carried out 5 pickup.Pick-up method is not particularly limited, and can use existing known various methods.For example, it can enumerate：Will with pin Each semiconductor chip 5 above pushes away from the side of adhesive foil 10 with cutting film, is partly led using what pick device pickup above pushed away Method of body chip 5 etc..
Here, in the case that adhesive phase 2 is ultraviolet hardening, carried out after ultraviolet is irradiated to the adhesive phase 2 Pickup.Thus, adhesive phase 2 declines to the bonding force of adhesive foil 3, and the stripping of semiconductor chip 5 becomes easy.As a result, may be used To be picked up in the case where not damaging semiconductor chip 5.The conditions such as exposure intensity, irradiation time when ultraviolet irradiates do not have There is special limitation, can suitably set as needed.In addition, the light source used when being irradiated as ultraviolet, can be used foregoing Light source.
The semiconductor chip 5 of pickup is glued on adherend 6 and fixed (chip stickup) by adhesive foil 3.
Now, chip sticking temperature is preferably 80~150 DEG C, more preferably 85~140 DEG C, further preferred 90~130 DEG C. By being set as more than 80 DEG C, can prevent the storage tensile modulus of adhesive foil 3 becomes too high, can be suitably gluing.Separately Outside, by being set as less than 150 DEG C, it can prevent chip from producing warpage after pasting, so as to not allow to be also easy to produce breakage.
In addition, chip application pressing force preferred 0.05MPa~5MPa, more preferably 0.06MPa~4.5MPa, further preferably 0.07MPa~4MPa.By being set as more than 0.05MPa, it can prevent that gluing middle generation is uneven.In addition, by being set as Below 5MPa, it is not easy to the breakage of semiconductor chip 5 is produced due to pressure.
In addition, chip when applying the chip application pressing force is pasted the time, preferably 0.1~5 second, more preferably 0.15~ 4.5 seconds, further preferred 0.2~4 second.By being set as more than 0.1 second, be able to can be prevented gluing with uniformly applied pressure Middle generation is uneven.In addition, by being set as less than 5 seconds, yield rate can be improved.
Then, by the way that adhesive foil 3 is heated, make semiconductor chip 5 and adherend 6 gluing.
Temperature during heating is preferably more than 80 DEG C, more preferably more than 170 DEG C.The temperature of heating is preferably Less than 200 DEG C, more preferably less than 180 DEG C.In addition, the time heated is preferably more than 0.1 hour, more preferably 0.5 hour More than.The time of heating is preferably less than 24 hours, more preferably less than 4 hours, further preferred less than 2 hours.Heating The temperature of processing, time within the above range when, can be gluing well.
Then, carry out using bonding wire 7 by the electricity on the front end of the portion of terminal (inner lead) of adherend 6 and semiconductor chip 5 The wire bond process of pole pad electrical connection (not shown).As the bonding wire 7, can use for example：Gold thread, aluminum steel or copper cash etc.. Preferably more than 80 DEG C of temperature during progress wire bond, more preferably more than 120 DEG C, preferably less than 250 DEG C, more preferably 175 DEG C of the temperature Below.In addition, its heat time carries out several seconds~several minutes (such as 1 second~1 minute).Line connection is to reach the temperature in heating In the state of in the range of degree, the pressure that can and be applied by the way that ultrasonic activation is applied in combination can be carried out and caused crimping.
Then, carry out the sealing process for semiconductor chip 5 being sealed using sealing resin 8.This process is taken to protect The semiconductor chip 5 or bonding wire 7 that are loaded on adherend 6 and carry out.This process is by using mould by the resin forming of sealing Come carry out.As sealing resin 8, such as epoxylite can be used.Heating-up temperature during resin seal be preferably 165 DEG C with On, more preferably more than 170 DEG C, the heating-up temperature is preferably less than 185 DEG C, more preferably less than 180 DEG C.The heating-up temperature is described In the range of when, by the injection pressure of sealing resin 8, adhesive foil 3 can by adherend surface bumps bury well.
Heat time is not particularly limited, and preferably more than 1 minute, more preferably more than 2 minutes, the upper limit of heat time is preferred For less than 10 minutes, more preferably less than 5 minutes.
In addition, the die casting pressure (ト ラ Application ス フ ァ ー pressure) during resin seal is preferably more than 1KN, more preferably 3KN with On, die casting upper limit of pressure is preferably below 10KN, more preferably below 7KN.
Thus, sealing resin is made to solidify and by adhesive foil 3 by semiconductor chip 5 and the set of adherend 6.I.e., originally In invention, even in the case of without solidify afterwards process described later, can also be carried out in this process using adhesive foil 3 Set, it can aid in the manufacturing cycle for reducing manufacturing process's number and shortening semiconductor device.
Then, the sealing resin 8 for making to solidify deficiency in aforementioned seal process is fully cured (solidify afterwards process).Thus, In the case of using the adhesive compound manufacture adhesive foil 3 containing thermosetting resin, even the glue in sealing process In the case of the viscous incomplete heat cure of film 3, in this process can also by sealing resin 8 together with adhesive foil 3 heat completely Solidification.Heating-up temperature in this process is different because of the species of sealing resin, for example, in the range of 165~185 DEG C, during heating Between be about 0.5 hour~about 8 hours.
The semiconductor device obtained by such method, the bumps on adherend surface are buried, can suppressed well The generation in space, therefore reliability is high.
Embodiment
Hereinafter, using embodiment, the present invention is described in detail, still, in the scope no more than idea of the invention Interior, the invention is not restricted to following embodiment.In addition, in each example, if not otherwise specified, " part " is weight basis.
The composition used in embodiment is illustrated.
Acrylic copolymer SG-P3：The テ イ サ Application レ of long rapids chemical conversion (Na ガ セ ケ system テ ッ Network) Co., Ltd. manufacture ジンSG-P3(Mw：850000, glass transition temperature：12℃)
Acrylic copolymer SG-600TEA：The テ イ サ Application レ ジ Application SG-600TEA of Nagase chemical Co., Ltd's manufacture (Mw：1200000, glass transition temperature：-37℃)
Acrylic copolymer S-2060：The ア ロ Application タ ッ Network S-2060 (Mw of Toagosei Co., Ltd's manufacture：550000, Glass transition temperature：-22℃)
Epoxy resin HP-4700：The HP-4700 (naphthalene type epoxy resin) of Dainippon Ink Chemicals's manufacture
Epoxy resin PN501HY：The EPPN501HY of Nippon Kayaku K. K's manufacture
Phenolic resin MEH-7851H：Bright and the manufacture of chemical conversion Co., Ltd. MEH-7851H
Phenolic resin MEH-7851SS：Bright and the manufacture of chemical conversion Co., Ltd. MEH-7851SS (phenol-sub- biphenyl)
Phenolic resin MEH-7800H：Bright and the manufacture of chemical conversion Co., Ltd. MEH-7800H
Crosslinking agent テ ト ラ ッ De C：The テ ト ラ ッ De C (epoxies crosslinking agent) of gas chemical company of Mitsubishi manufacture
Filler SO-E2：The SO-E2 (preparing spherical SiO 2) of Admatechs (ア De マ テ ッ Network ス) Co., Ltd. manufacture
Filler MEK-ST：MEK-ST (silicon dioxide gel disperseed in MEK, the grain of Nissan Chemical Industries company manufacture 10~20nm of footpath, the mass % of solid component concentration 30)
Filler MEK-ST-L：(silica disperseed in MEK is molten by the MEK-ST-L of Nissan Chemical Industries company manufacture Glue, 40~50nm of particle diameter, the mass % of solid component concentration 30)
Thermally activated latent curing agent (curing catalysts) 2PZ：The キ ュ ア ゾ ー Le (2- of chemical conversion company of four countries manufacture Phenylimidazole)
Illustrated for the BGA substrates used in embodiment.
BGA substrates：Japanese circuit (サ ー キ ッ ト) Industrial Co., Ltd manufacture TFBGA (10 μm of concave-convex surface)
<The making of adhesive foil>
According to the match ratio shown in table 1, each composition is dissolved into MEK, obtains the weight % of concentration 23.6 adhesive Composition solution.
Poly- terephthaldehyde by the adhesive compound solution coating to 38 μm of the thickness after polysiloxanes lift-off processing On the demoulding processing film (release liner) that sour glycol ester is formed, then dried 2 minutes at 130 DEG C.Thus, thickness 25 is made μm adhesive foil.
<The making of adhesive foil with cutting film>
Resulting adhesive foil is fitted into the cutting film (DU- that Nitto Denko Corp manufactures using hand roller 300) on adhesive phase, the adhesive foil with cutting film is made.
<The making of semiconductor chip with adhesive foil>
Semiconductor wafer (8 inches of diameter, thickness 0.6mm) is subjected to grinding back surface processing, obtains the minute surface of 100 μm of thickness Chip.After partition is peeled off from the adhesive foil with cutting film, minute surface chip roll-in is connect at 40 DEG C and pastes its glue On viscous film, then cut.In addition, cutting is cut in a manner of obtaining the chip size of 10mm square.
Then, enter and be about to the adhesive foil stretching with cutting film, so as to which each chip chamber is adjusted into defined interval Expansion process.In addition, from the substrate side of the adhesive foil with cutting film, semiconductor is picked up by way of pin above pushes away Chip, obtain the semiconductor chip with adhesive foil.
In addition, grinding wafer condition, laminating condition, cutting condition, expansion condition, pickup conditions are as described below.
<Grinding wafer condition>
Grinding attachment：Disco (デ ィ ス Us) company manufactures, DFG-8560
Semiconductor wafer：8 inch diameters
<Laminating condition>
Sticker：The smart machine manufacture in day east, MA-3000II
Labeling rates meter：10mm/ minutes
Application pressing force：0.15MPa
Platform temperature during stickup：40℃
<Cutting condition>
Cutter device：Disco companies manufacture, DFD-6361
Cut ring：2-8-1 (manufacture of Disco companies)
Cutting speed：The 30mm/ seconds
Cutting blade：Disco companies manufacture, NBC-ZH226J27HAAA
Cutting blade rotating speed：30,000rpm
Blade height：0.085mm
Cutting mode：Single step is cut
Wafer chip size：10.0mm square
<Expansion condition>
Chip engagement machine：New river Co. Ltd. system, device name：SPA-300
Outer shroud relative to inner ring the amount of leaving behind (drawing to fall amounts)：3mm
<Pickup conditions>
Pick device：New river Co. Ltd. system
Pin number：9
Pushing volume on pin：300μm
Speed is pushed away on pin：The 5mm/ seconds
The chuck retention time：1 second
<The making of substrate with semiconductor chip>
Using chip engagement machine, the adhesive foil of the semiconductor chip with adhesive foil is set to be glued on BGA substrates, Heated 1 hour at 175 DEG C.Thus, the substrate with semiconductor chip is obtained.
Using resulting adhesive foil, the substrate with semiconductor chip, following evaluation is carried out.As a result such as the institute of table 1 Show.
<175 DEG C of loss tangent (tan δ) after being heated 1 hour at 175 DEG C>
Reach 100 μm of thickness by adhesive foil is overlapping, and be cut into width 10mm, length 40mm.Then, add at 175 DEG C Heat 1 hour, make sample 1.For sample 1, Measurement of Dynamic Viscoelasticity device (DMA) RSA3 manufactured using TA instrument companies, Viscoplasticity is determined under conditions of following.
Frequency：1Hz
Mode determination：Stretching
Chuck spacing：22mm
Measurement temperature：- 50 DEG C~300 DEG C
Programming rate：10 DEG C/min
Data obtain：It is spaced within 10 seconds
By loss tangent (tan δ) (=loss elastic modulus (E ")/(store elastic modulus of resulting each temperature E ')) data carry out approximate (obtaining rolling average curve of approximation) with 10 section rolling averages, obtain 175 DEG C of approximation.
In addition, being carried out with 10 section rolling averages approximate, it is the reasons why the approximation for obtaining 175 DEG C, 175 DEG C of loss There is fluctuation in modulus of elasticity, it is difficult to read correctly value.
<The peak temperature (DEG C) of loss tangent (tan δ) after being heated 5 hours at 175 DEG C>
Reach 100 μm of thickness by adhesive foil is overlapping, and be cut into width 10mm, length 40mm.Then, add at 175 DEG C Heat 5 hours, make sample 2.For sample 2, viscoplasticity is determined in the same manner as sample 1, and obtain rolling average curve of approximation.From The rolling average curve of approximation obtained, read the peak temperature of loss tangent (tan δ).
<Wire bond>
Using the substrate with semiconductor chip, silk is carried out under conditions of 8 milliseconds of time, load 25gf, 170 DEG C of temperature Weldering.
By do not produced in wire bond mistake situation be evaluated as zero, will produce mistake situation be evaluated as ×.
<The burial in space>
After wire bond, resin seal is carried out under conditions of 175 DEG C of temperature, 90 seconds time, die casting pressure 5KN.
After resin seal, ultrasonic flaw detecting device (SAT is used：Scan acoustics tomography) image is obtained, gluing thin Between film and substrate do not observe space situation be evaluated as zero, it was observed that the situation in space be evaluated as ×.
<Comprehensive descision>
Loss tangent (tan δ) by (1) 175 DEG C is 0.2~0.6, (2) wire bond is zero, the burial in (3) space It is that the situation that -30~75 DEG C (1)~(4) full terms are satisfied by is evaluated as zero for zero, (4) peak temperature, will be at least any one The individual ungratified situation of condition is evaluated as ×.
Table 1

Claims (10)

1. a kind of semiconductor device adhesive compound, the semiconductor device adhesive compound heats 1 hour at 175 DEG C 175 DEG C of loss tangent (tan δ) in Measurement of Dynamic Viscoelasticity afterwards is 0.2~0.6,
The semiconductor device adhesive compound contains filler, and the content of the filler is relative to organic resin constituent 100 parts by weight are more than 15 × 100/85 parts by weight and below 80 parts by weight.
2. semiconductor device adhesive compound as claimed in claim 1, wherein, loss tangent (tan δ) is applying With 10 DEG C/min of determination of heating rate while frequency 1Hz shear strain.
3. semiconductor device adhesive compound as claimed in claim 1 or 2, wherein, after 175 DEG C are heated 5 hours, move It is -30~75 DEG C that loss tangent (tan δ) in state determination of viscoelasticity, which reaches maximum temperature,.
4. semiconductor device adhesive compound as claimed in claim 1, wherein, relative to the weight of organic resin constituent 100 Part is measured, the content of thermally activated latent curing catalyst is below 0.05 parts by weight.
5. semiconductor device adhesive compound as claimed in claim 1, wherein, in the weight % of organic resin constituent 100 The content of acrylic resin be 60~100 weight %.
6. a kind of semiconductor device adhesive foil, dynamic of the semiconductor device adhesive foil after 175 DEG C of heating 1 hour 175 DEG C of loss tangent (tan δ) in determination of viscoelasticity is 0.2~0.6,
The semiconductor device adhesive compound contains filler, and the content of the filler is relative to organic resin constituent 100 parts by weight are more than 15 × 100/85 parts by weight and below 80 parts by weight.
7. semiconductor device adhesive foil as claimed in claim 6, it is pasted film as chip and used.
8. a kind of adhesive foil with cutting film, wherein, half described in claim 6 or 7 is laminated with cutting film Conductor device adhesive foil.
9. a kind of manufacture method of semiconductor device, will with adhesive foil including the use of the semiconductor device described in claim 7 Semiconductor chip chip pastes the process on adherend.
10. the semiconductor device obtained by the manufacture method described in claim 9.
CN201310284712.6A 2012-07-06 2013-07-08 Semiconductor device adhesive compound, semiconductor device adhesive foil, the adhesive foil with cutting film, the manufacture method and semiconductor device of semiconductor device Active CN103525338B (en)

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