KR20140005794A - Adhesive composition for semiconductor device, adhesive film for semiconductor device, adhesive film with dicing film, method for manufacturing semiconductor device and semiconductor device - Google Patents

Abstract

The present invention provides an adhesive composition for a semiconductor device, an adhesive film for a semiconductor device, and an adhesive film with a dicing film, capable of producing a highly reliable semiconductor device with a small number of voids. The present invention relates to an adhesive composition for a semiconductor device with 0.2-0.6 loss tangent at 175 deg. C in relation to dynamic viscoelasticity measurement after heating at 175 deg. C for 1 hour.

Description

Adhesive composition for semiconductor devices, adhesive film for semiconductor devices, adhesive film having a dicing film, method for manufacturing semiconductor device and semiconductor device SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE}

This invention relates to the adhesive composition for semiconductor devices, the adhesive film for semiconductor devices, the adhesive film which has a dicing film, the manufacturing method of a semiconductor device, and a semiconductor device.

In recent years, semiconductor packages have shifted from insert-mounted type represented by DIP (Dual Inline Checkage) to surface-mounted type represented by ball grid array (BGA) for the purpose of miniaturization of packages and high-density mounting of functions.

In manufacture of these semiconductor packages, when attaching and fixing a semiconductor chip to to-be-adhered bodies, such as a lead frame and an interposer, a die attach (die bond) material may be used. In addition, the die attach material may be used also when stacking (stacking) a semiconductor chip for the purpose of high capacity.

By the way, although there are several micrometers of unevenness | corrugation on the surface of to-be-adhered bodies, such as an interposer, even if a die attach material is used, the unevenness | corrugation of the to-be-adhered body surface cannot fully be filled, and a void generate | occur | produces between a to-be-adhered body and a die attach material, and a semiconductor package There existed a problem that the reliability of (for example, patent document 1) fell.

Japanese Patent Publication No. 2008-231366

This invention is made | formed in view of the said problem, and is providing the adhesive film which has the adhesive composition for semiconductor devices, the adhesive film for semiconductor devices, and the dicing film which can manufacture a highly reliable semiconductor device with few voids.

The inventors of the present invention have studied to solve the above-mentioned conventional problems, and as a result, by adjusting the loss tangent (tanδ) at a general temperature (175 ° C) at the time of the resin sealing step to a specific value, the semiconductor is affected by the injection pressure of the sealing resin. The adhesive composition for apparatus found out that the unevenness | corrugation of a to-be-adhered body surface can be buried satisfactorily, and completed this invention.

That is, this invention relates to the adhesive composition for semiconductor devices whose loss tangent (tan-delta) of 175 degreeC in the dynamic viscoelasticity measurement after heating at 175 degreeC for 1 hour is 0.2-0.6.

By adjusting the loss tangent (tanδ) at a general temperature (175 ° C) at the time of the resin sealing step to a specific value, the adhesive composition for semiconductor devices can reliably bury the irregularities on the surface of the adherend by the injection pressure of the sealing resin. Therefore, generation of voids can be suppressed, and a highly reliable semiconductor device can be manufactured.

In this invention, the loss tangent (tan-delta) after heating for 1 hour at 175 degreeC is prescribed | regulated. This assumes the heat history applied to the adhesive composition for semiconductor devices by the die attach process and the wire bonding process in manufacture of the semiconductor device which stacks a semiconductor chip. In recent years, since the number of stacks of chips is increasing for the purpose of high capacity, the die attach process and the wire bonding process are increasing. In this invention, since these heat history is assumed, in the resin sealing process performed after a die attach process and a wire bonding process, even if the adhesive composition for semiconductor devices is exposed to high temperature for a long time, the unevenness | corrugation of the to-be-adhered body surface will be favorable. It can be buried, and generation | occurrence | production of a void can be suppressed and a highly reliable semiconductor device can be manufactured.

The loss tangent tan δ is preferably measured at an elevated temperature of 10 ° C./min, giving a shear distortion of 1 kHz.

After heating at 175 degreeC for 5 hours, it is preferable that the temperature which the loss tangent (tan-delta) in a dynamic-viscoelasticity measurement becomes the maximum is -30-75 degreeC.

The conditions of 5 hours heating at 175 degreeC assume the heat history of a die attach process, a wire bonding process, and a resin sealing process in manufacture of the semiconductor device which stacks a semiconductor chip, and the said structure is after these processes The temperature range which the loss tangent (tan-delta) of the adhesive composition for semiconductor devices becomes largest is prescribed | regulated. According to the said structure, in the -30-75 degreeC which is a daily use temperature range of a semiconductor device, favorable vibration relaxation property is obtained and the failure of the semiconductor device obtained can be reduced.

It is preferable that content of a thermally active latent curing catalyst is 0.05 weight part or less with respect to 100 weight part of organic resin components. If it is 0.05 weight part or less, hardening of the adhesive composition for semiconductor devices does not progress excessively by a die attach process and a wire bonding process, and loss tangent (tan-delta) of 175 degreeC can be adjusted suitably in the range of 0.2-0.6. Thereby, irregularities on the surface of the adherend can be buried satisfactorily.

It is preferable that content of an acrylic resin is 60-100 weight% in 100 weight% of organic resin components. Thereby, the unevenness | corrugation of the surface of a to-be-adhered body can be buried satisfactorily, generation | occurrence | production of a void can be suppressed and a highly reliable semiconductor device can be manufactured.

This invention also relates to the adhesive film for semiconductor devices whose loss tangent (tan-delta) of 175 degreeC in the dynamic viscoelasticity measurement after heating at 175 degreeC for 1 hour is 0.2-0.6.

It is preferable that the adhesive film for semiconductor devices is used as a die attach film.

The present invention also relates to an adhesive film having a dicing film in which an adhesive film for a semiconductor device is laminated on a dicing film.

The present invention also relates to a method for manufacturing a semiconductor device, including a step of die attaching a semiconductor chip to an adherend using an adhesive film for a semiconductor device.

The present invention also relates to a semiconductor device obtained by the above manufacturing method.

1 is a schematic cross-sectional view of an adhesive film having a dicing film according to an embodiment of the present invention.
It is a cross-sectional schematic diagram of the adhesive film which has a dicing film concerning another embodiment of this invention.
3 is a view for explaining a manufacturing method of a semiconductor device of the present invention.

As for the adhesive composition of this invention, the loss tangent (tan-delta) of 175 degreeC in dynamic viscoelasticity measurement after heating at 175 degreeC for 1 hour is 0.2 or more, Preferably it is 0.25 or more. If it is 0.2 or more, the unevenness | corrugation of a to-be-adhered body surface can be embedded favorably.

The loss tangent (tan-delta) of 175 degreeC in the dynamic-viscoelasticity measurement after heating at 175 degreeC for 1 hour is 0.6 or less, Preferably it is 0.55 or less. If it is 0.6 or less, the unevenness | corrugation of the to-be-adhered body surface can be embedded favorably. Moreover, wire bonding can be performed favorably.

The loss tangent tan δ can be controlled by the content of the thermally active latent curing catalyst, the content of the crosslinking agent, the content of the acrylic resin, the weight average molecular weight of the acrylic resin, the glass transition temperature of the acrylic resin, and the like.

In addition, 175 degreeC loss tangent (tan-delta) in dynamic viscoelasticity measurement after heating at 175 degreeC for 1 hour can be measured at the temperature rising temperature of 10 degree-C / min, giving a 1 Hz shear distortion to an adhesive composition. Specifically, it can be measured by the method described in the examples.

The adhesive composition of the present invention usually contains an organic resin component. As an organic resin component, thermoplastic resins, such as an acrylic resin, a thermosetting resin, etc. are mentioned.

Since the adhesive composition of this invention has few ionic impurities and high heat resistance and can ensure the reliability of a semiconductor element, it is preferable to contain an acrylic resin.

It does not specifically limit as said acrylic resin, The polymer which has 1 or 2 or more types of ester of acrylic acid or methacrylic acid which has a C30 or less, especially a C4-C18 linear or branched alkyl group (acrylic air) Coalescence); Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a t-butyl group, an isobutyl group, an amyl group, an isoamyl group, a hexyl group, a heptyl group, An ethylhexyl group, an octyl group, an isooctyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, an undecyl group, a lauryl group, a tridecyl group, a tetradecyl group, a stearyl group, And the like.

In addition, the other monomer forming the polymer is not particularly limited, and for example, contains a carboxyl group such as acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid or crotonic acid. Monomers, acid anhydride monomers such as maleic anhydride or itaconic anhydride, (meth) acrylic acid 2-hydroxyethyl, (meth) acrylic acid 2-hydroxypropyl, (meth) acrylic acid 4-hydroxybutyl, (meth) acrylic acid 6 Hydroxyhexyl, (meth) acrylic acid 8-hydroxyoctyl, (meth) acrylic acid 10-hydroxydecyl, (meth) acrylic acid 12-hydroxylauryl or (4-hydroxymethylcyclohexyl) -methylacrylate, and the like. Same hydroxyl group-containing monomer, styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamide propanesulfonic acid, sulfopropyl (meth) Sulfonic acid group-containing monomers such as acrylate or (meth) acryloyloxynaphthalenesulfonic acid and the like, or phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate and the like.

It is preferable that a weight average molecular weight is 100,000 or more among the said acrylic resin, It is more preferable that it is 300,000-3 million, It is further more preferable that it is 500,000-2 million. It is because it is excellent in adhesiveness and heat resistance in it being in the said numerical range. In addition, a weight average molecular weight is the value measured by GPC (gel permeation chromatography) and computed by polystyrene conversion.

The glass transition temperature of an acrylic resin becomes like this. Preferably it is -50 degreeC or more, More preferably, it is -30 degreeC or more. In addition, the glass transition temperature of an acrylic resin becomes like this. Preferably it is 50 degrees C or less, More preferably, it is 30 degrees C or less. If the glass transition temperature of an acrylic resin is in the said range, the unevenness | corrugation of a to-be-adhered body surface can be embedded favorably.

The glass transition temperature of an acrylic resin is obtained by the temperature at the maximum heat absorption peak measured by a differential scanning calorimeter (DSC). Specifically, the sample to be measured was heated for 10 minutes at a temperature of about 50 ° C. higher than the predicted glass transition temperature (prediction temperature) of the sample by using a differential scanning calorimeter (“Q-2000” manufactured by TAI Instruments). Thereafter, the mixture is cooled to a temperature lower than 50 ° C. below the predicted temperature, pretreated, and then heated under a nitrogen atmosphere at a temperature increase rate of 5 ° C./min to measure the endothermic onset temperature, which is referred to as a glass transition temperature.

In the adhesive composition of this invention, content of acrylic resin in 100 weight% of organic resin components becomes like this. Preferably it is 60 weight% or more, More preferably, it is 70 weight% or more. If it is 60 weight% or more, an adhesive composition can bury the unevenness | corrugation of the to-be-adhered body surface favorably. Although the upper limit of content of an acrylic resin is not specifically limited, Preferably it is 95 weight% or less, More preferably, it is 90 weight% or less. If it is 95 weight% or less, the characteristic of the acrylic resin component and the characteristic of the organic resin component except the acrylic resin component can be compatible.

The adhesive composition of this invention may contain the thermosetting resin. By using a thermosetting resin, the heat resistance of an adhesive composition can be improved.

Examples of the thermosetting resin include a phenol resin, an amino resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. These resin can be used individually or in combination of 2 or more types. Particularly, an epoxy resin containing less ionic impurities or the like which corrodes semiconductor elements is preferable. As the curing agent of the epoxy resin, a phenol resin is preferable.

The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, and biphenyl type. , Bifunctional epoxy resins such as naphthalene type, fluolene type, phenol novolak type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, or polyfunctional epoxy resin, or hydantoin type, trisgly Epoxy resins, such as a cydyl isocyanurate type or a glycidyl amine type, are used. These may be used alone or in combination of two or more. Of these epoxy resins, novolak type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylol ethane type epoxy resins are particularly preferable. These epoxy resins are rich in reactivity with a phenol resin as a curing agent and have excellent heat resistance.

The phenolic resin acts as a curing agent for the epoxy resin. Examples of the phenolic resin include phenol novolak resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, and nonylphenol novolak resins Novolak type phenol resins, resole type phenol resins, and polyoxystyrenes such as polyparaxyxystyrene. These may be used alone or in combination of two or more. Of these phenolic resins, phenol novolac resins and phenol aralkyl resins are particularly preferable. This is because connection reliability of the semiconductor device can be improved.

It is preferable to mix | blend the compounding ratio of the said epoxy resin and a phenol resin so that the hydroxyl group may be 0.5-2.0 equivalent in a phenol resin per 1 equivalent of epoxy groups in the said epoxy resin component. More suitable is 0.8 to 1.2 equivalents. That is, if the mixing ratio of the two is out of the above range, sufficient curing reaction does not proceed and the properties of the epoxy resin cured product tend to deteriorate.

In the adhesive composition of this invention, content of the thermosetting resin in 100 weight% of organic resin components becomes like this. Preferably it is 5 weight% or more, More preferably, it is 10 weight% or more. If it is 5 weight% or more, thermosetting is obtained favorably. Content of a thermosetting resin becomes like this. Preferably it is 40 weight% or less, More preferably, it is 30 weight% or less. If it is 40 weight% or less, an adhesive composition can bury the unevenness | corrugation of the to-be-adhered body surface favorably.

The adhesive composition of this invention may contain the thermally active latent curing catalyst. As a thermally active latent curing catalyst, Imidazole, such as 2-phenylimidazole and 2-methylimidazole; Amines such as diethylenetriamine and m-phenylenediamine; Phosphines such as dialkyl phosphine, trialkyl phosphine and phenyl phosphine; Imidazolium salts such as 1,3-dialkylimidazolium salts; In addition, onium salts, fourth phosphonium compounds, onium borate and the like can be mentioned.

In the adhesive composition of the present invention, the smaller the content of the thermally active latent curing catalyst is, the more preferable it is. Preferably it is 0 weight part. If it is 0.05 weight part or less, hardening of the adhesive composition for semiconductor devices does not progress excessively by a die attach process and a wire bonding process, and loss tangent (tan-delta) of 175 degreeC can be adjusted suitably in the range of 0.2-0.6. And irregularities on the surface of the adherend can be well buried.

The adhesive composition of this invention may contain the crosslinking agent. As a crosslinking agent, the polyfunctional compound which reacts with the functional group etc. of the molecular chain terminal of a polymer can be used suitably, Epoxy type crosslinking agent can be used more suitably.

In the adhesive composition of the present invention, the smaller the content of the crosslinking agent is, the more preferable, and it is preferably 0.1 parts by weight or less, and more preferably 0 parts by weight with respect to 100 parts by weight of the organic resin component. If it is 0.1 weight part or less, an adhesive composition can reliably embed the unevenness | corrugation of the surface of a to-be-adhered body.

It is preferable that the adhesive composition of this invention contains a filler. Thereby, the embedding property against unevenness | corrugation is obtained favorably. As the filler, an inorganic filler is preferable. As the inorganic filler, for example, ceramics such as silica, clay, gypsum, calcium carbonate, barium sulfate, alumina oxide, beryllium oxide, silicon carbide, silicon nitride, aluminum, copper, silver, gold, nickel, chromium, lead, tin, Various inorganic powders containing metals, such as zinc, palladium, a solder, or alloys, other carbon, etc. are mentioned. These may be used alone or in combination of two or more. Especially, silica, especially fused silica, is used suitably for the reason that the embedding property against unevenness | corrugation is obtained favorably.

In the adhesive composition of the present invention, the content of the filler is preferably 1 part by weight or more, and more preferably 5 parts by weight or more, based on 100 parts by weight of the organic resin component. If it is 1 weight part or more, heat resistance will be obtained favorably and the embedding property against unevenness | corrugation will be obtained favorably. Content of a filler becomes like this. Preferably it is 80 weight part or less, More preferably, it is 70 weight part or less. If it is 80 weight part or less, the embedding property to unevenness | corrugation is obtained favorably.

The adhesive composition of this invention may contain (benzo) triazoles from the point which can prevent corrosion well.

In the adhesive composition of the present invention, the content of (benzo) triazoles is preferably 0.01 to 15 parts by weight, more preferably 0.05 to 10 parts by weight, still more preferably 0.1 to 1 part by weight of the organic resin component. 5 parts by weight. If it is less than 0.01 weight part, there exists a possibility that a corrosion prevention action may not be exhibited suitably. When it exceeds 15 weight part, there exists a possibility that it may inhibit adhesiveness.

It does not specifically limit as a manufacturing method of the adhesive composition of this invention, For example, it can obtain as an adhesive composition solution by putting each said component in a container, dissolving in an organic solvent, and stirring so that it may become uniform.

Although it does not specifically limit as an organic solvent, Although a conventionally well-known thing can be used, It is preferable that each said component can be melt | dissolved, kneaded or disperse | distributed uniformly. As such an organic solvent, ketone solvents, such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, cyclohexanone, toluene, xylene, etc. are mentioned, for example. It is preferable to use methyl ethyl ketone, cyclohexanone, etc. from the point that drying speed is fast and it can obtain cheaply.

After heating the adhesive composition of this invention for 5 hours at 175 degreeC, it is preferable that the temperature which the loss tangent (tan-delta) in a dynamic-viscoelasticity measurement becomes the maximum is a specific value.

The said temperature becomes like this. Preferably it is -30 degreeC or more, More preferably, it is -25 degreeC or more, More preferably, it is -20 degreeC or more, Especially preferably, it is -15 degreeC or more. On the other hand, the said temperature becomes like this. Preferably it is 75 degrees C or less, More preferably, it is 70 degrees C or less, More preferably, it is 60 degrees C or less, Especially preferably, it is 50 degrees C or less. If the said temperature is the said range, in the normal use temperature range of a semiconductor device, favorable vibration relaxation property will be obtained and the failure of the semiconductor device obtained can be reduced. In addition, the said temperature can be measured by the method as described in an Example.

The said temperature can be controlled by the glass transition temperature of an organic resin component, the glass transition temperature of a filler, etc.

The adhesive composition of the present invention is used for a semiconductor device. Although the adhesive composition of this invention is not specifically limited as long as it is used for a semiconductor device, It is preferable to use in order to adhere | attach (die attach) a to-be-adhered body, such as an interposer, and a semiconductor chip. As an adherend, an interposer, a lead frame, a semiconductor chip, etc. are mentioned. Especially, it can use suitably for the to-be-adhered body which has unevenness | corrugation on the surface, and can use it especially suitably for the interposer for BGA and land grid array (LGA) use of single side sealing.

Moreover, as a semiconductor device, it can be used suitably for the semiconductor device of the three-dimensional mounting which laminated | stacked several semiconductor chips.

The adhesive film of this invention can be manufactured by a conventional method using the said adhesive composition. For example, an adhesive film can be manufactured by manufacturing the said adhesive composition solution, apply | coating an adhesive composition solution so that it may become a predetermined thickness on a base separator, and forming a coating film, and then drying the coating film under predetermined conditions. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, gravure coating and the like. The drying conditions are, for example, within a range of a drying temperature of 70 to 160 DEG C and a drying time of 1 to 5 minutes. As the substrate separator, a plastic film, paper or the like surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine-based release agent or a long-chain alkyl acrylate-based release agent can be used.

The loss tangent (tan-delta) of 175 degreeC in the dynamic-viscoelasticity measurement after heating at 175 degreeC for 1 hour in the adhesive film of this invention is 0.2-0.6. The preferred range of the loss tangent tan δ is the same as in the case of the adhesive composition.

Moreover, after heating the adhesive film of this invention for 5 hours at 175 degreeC, it is preferable that the temperature which the loss tangent (tan-delta) in dynamic viscoelasticity measurement becomes the maximum is -30-75 degreeC. The preferable range of the said temperature is the same as that of the adhesive composition.

If the adhesive film of this invention is used for a semiconductor device, it will not specifically limit, It can use suitably as a die attach film, a wafer back surface protective film, etc. Here, a wafer back surface protective film is used for protecting the back surface (exposed surface on the opposite side to a board | substrate) of a semiconductor chip, when mounting a semiconductor chip to a board | substrate by flip chip bonding. Especially, it is preferable to use as a die attach film.

Moreover, the adhesive film of this invention can be used suitably as an adhesive film which has a dicing film in which the said adhesive film is laminated | stacked on the dicing film.

Hereinafter, the case where an adhesive film is used as a die attach film is demonstrated about the adhesive film which has a dicing film of this invention as an example.

1 is a schematic cross-sectional view of an adhesive film having a dicing film according to an embodiment of the present invention. It is a cross-sectional schematic diagram of the adhesive film which has a dicing film concerning another embodiment of this invention.

As shown in FIG. 1, the adhesive film 10 having a dicing film has a configuration in which the adhesive film 3 is laminated on the dicing film 11. The dicing film 11 is comprised by laminating | stacking the adhesive layer 2 on the base material 1, and the adhesive film 3 is provided on the adhesive layer 2. Moreover, the structure which provided the adhesive film 3 'only in the workpiece | work attachment part may be sufficient as this invention like the adhesive film 12 which has a dicing film shown in FIG.

The said base material 1 becomes an intensity | strength matrix of the adhesive films 10 and 12 which have a dicing film, and it is preferable to have ultraviolet permeability. For example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, polyolefins such as homopolypropylene, polybutene, polymethylpentene, ethylene-acetic acid Vinyl copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate Polyesters such as polyethylene naphthalate, polycarbonate, polyimide, polyether ether ketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfide, aramid (paper), glass, glass fiber, Fluoropolymer, polyvinyl chloride, polyvinylidene chloride, cellulose resin, sil There may be mentioned a resin, metal (foil), paper or the like.

Moreover, as a material of the base material 1, polymers, such as a crosslinked body of the said resin, are mentioned. The said plastic film may be used by extending | stretching, and the thing which performed the uniaxial or biaxial stretching process as needed may be used. According to the resin sheet which provided heat shrinkability by extending | stretching process etc., the contact area of the adhesive layer 2 and adhesive films 3 and 3 'is reduced by heat-shrinking the base material 1 after dicing, and a semiconductor chip (semiconductor element) ) Recovery can be facilitated.

The surface of the substrate 1 may be subjected to a surface treatment such as chemical treatment such as chromic acid treatment, ozone exposure, flame exposure, high voltage exposure, ionizing radiation treatment, etc. to improve the adhesion with the adjacent layer, Treatment, and coating treatment with a primer (for example, an adhesive material to be described later). The said base material 1 can select the same kind or a different thing suitably, and can use what blended several species as needed.

The thickness of the substrate 1 is not particularly limited and can be appropriately determined, but is generally about 5 to 200 mu m.

It does not restrict | limit especially as an adhesive used for formation of the adhesive layer 2, For example, general pressure-sensitive adhesives, such as an acrylic adhesive and a rubber-based adhesive, can be used. As the above-mentioned pressure-sensitive adhesive, an acrylic pressure-sensitive adhesive using an acrylic polymer as a base polymer is preferable from the viewpoints of ultrapure water of an electronic part that is not susceptible to contamination such as a semiconductor wafer or glass, and clean cleaning property by an organic solvent such as alcohol.

As said acryl-type polymer, (meth) acrylic-acid alkylester (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl Ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester , Alkyl groups such as hexadecyl esters, octadecyl esters and eicosyl esters, such as linear or branched alkyl esters having 1 to 30 carbon atoms, especially 4 to 18 carbon atoms, and (meth) acrylic acid cycloalkyl esters (for example, Cyclopentyl ester, cyclohexyl ester, and the like) As there may be mentioned acrylic polymers used. The (meth) acrylic acid ester refers to an acrylate ester and / or a methacrylate ester, and the (meth) acrylate of the present invention has the same meaning.

The said acryl-type polymer may contain the unit corresponding to the other monomer component copolymerizable with the said (meth) acrylic-acid alkylester or cycloalkyl ester as needed for the purpose of modification, such as cohesion force and heat resistance. As such a monomer component, For example, Carboxyl group containing monomers, such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, crotonic acid; Acid anhydride monomers such as maleic anhydride and itaconic anhydride; Acrylate such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, Hydroxy group-containing monomers such as (meth) acrylic acid 10-hydroxydecyl, (meth) acrylic acid 12-hydroxylauryl and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Containing sulfonic acid group such as styrene sulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamide propanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acryloyloxynaphthalenesulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; Acrylamide, acrylonitrile, and the like. These copolymerizable monomer components may be used alone or in combination of two or more. The amount of these copolymerizable monomers to be used is preferably 40% by weight or less based on the total monomer components.

In addition, in order to crosslink, the said acrylic polymer can also contain a polyfunctional monomer etc. as a monomer component for copolymerization as needed. As such a polyfunctional monomer, for example, hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentylglycol di (meth) acrylic Latex, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, Polyester (meth) acrylate, urethane (meth) acrylate, etc. are mentioned. These polyfunctional monomers can also be used by 1 type (s) or 2 or more types. As for the usage-amount of a polyfunctional monomer, 30 weight% or less of all the monomer components is preferable at the point of adhesive characteristics.

The said acrylic polymer can be obtained by sticking a single monomer or 2 or more types of monomer mixtures to superposition | polymerization. The polymerization can be performed by any of solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. It is preferable that the content of the low molecular weight substance is small from the viewpoint of contamination prevention to a clean adherend. In this regard, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3 million.

In addition, in order to raise the number average molecular weights, such as an acryl-type polymer which is a base polymer, an external crosslinking agent can also be employ | adopted suitably for the said adhesive. As a specific means of an external crosslinking method, the method of making a so-called crosslinking agent, such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine type crosslinking agent, is added and made to react is mentioned. When using an external crosslinking agent, the usage-amount is suitably determined by the balance with the base polymer to be bridge | crosslinked, and also according to the use use as an adhesive. Generally, it is preferable to mix | blend about 5 weight part or less, and also 0.1-5 weight part with respect to 100 weight part of said base polymers. In addition, you may use additives, such as various conventionally well-known tackifiers and antioxidant, other than the said component as needed for an adhesive.

The pressure-sensitive adhesive layer (2) can be formed by a radiation-curable pressure-sensitive adhesive. The radiation-curable pressure-sensitive adhesive can increase the degree of crosslinking by irradiation of radiation such as ultraviolet rays and can easily lower the adhesive force, and irradiate only the portion 2a corresponding to the workpiece attachment portion of the pressure-sensitive adhesive layer 2 shown in FIG. 2. By doing so, the difference in adhesive force with the other part 2b can be set.

Moreover, by hardening the radiation-curable adhesive layer 2 according to the adhesive film 3 'shown in FIG. 2, the said part 2a by which the adhesive force fell remarkably can be formed easily. Since the adhesive film 3 'adheres to the said part 2a which hardened | cured and the adhesive force fell, the interface of the said part 2a of the adhesive layer 2 and the adhesive film 3' is easy at the time of pick-up. It has a property of peeling easily. On the other hand, the part not irradiated with radiation has sufficient adhesive force, and forms the said part 2b.

As described above, in the pressure-sensitive adhesive layer 2 of the adhesive film 10 having the dicing film shown in FIG. 1, the portion 2b formed of the uncured radiation-curable pressure-sensitive adhesive is the adhesive film 3. ) And the holding force at the time of dicing can be secured. In this way, the radiation-curable pressure-sensitive adhesive can support the adhesive film 3 for fixing the chip-shaped workpiece (semiconductor chip or the like) to an adherend such as a substrate with a good balance of adhesion and peeling. In the adhesive layer 2 of the adhesive film 12 which has a dicing film shown in FIG. 2, the said part 2b can fix a wafer ring.

The radiation-curable pressure-sensitive adhesive can be used without any particular limitation as long as it has a radiation-curable functional group such as a carbon-carbon double bond and exhibits adhesiveness. As a radiation hardening type adhesive, the addition type radiation hardening type adhesive which mix | blended the radiation curable monomer component and oligomer component with general pressure-sensitive adhesives, such as the said acrylic adhesive and a rubber-based adhesive, for example can be illustrated.

As a radiation curable monomer component to mix | blend, a urethane oligomer, urethane (meth) acrylate, trimethylol propane tri (meth) acrylate, tetramethylol methane tetra (meth) acrylate, pentaerythritol tri (meth), for example Acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, etc. Can be mentioned. Moreover, various oligomers, such as a urethane type, a polyether type, a polyester type, a polycarbonate type, and a polybutadiene type, can be mentioned as a radiation curable oligomer component, It is suitable that the molecular weight is the range of about 100-30000. The amount of the radiation-curable monomer component or the oligomer component can be appropriately determined depending on the type of the pressure-sensitive adhesive layer so that the adhesive force of the pressure-sensitive adhesive layer can be lowered. Generally, it is 5-500 weight part, for example, about 40-150 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

Moreover, as a radiation curable adhesive, the internal radiation curable adhesive which used the thing which has a carbon-carbon double bond in a polymer side chain, a main chain, or a main chain terminal as a base polymer other than the addition type radiation curable adhesive mentioned above is mentioned. Since the internal radiation curable pressure sensitive adhesive does not need to contain an oligomer component or the like which is a low molecular component or most of them, the oligomer component or the like does not move in the adhesive material over time, and thus the pressure-sensitive adhesive layer having a stable layer structure It is preferable because it can be formed.

The above-mentioned base polymer having a carbon-carbon double bond may have a carbon-carbon double bond and have a sticking property without particular limitation. As such a base polymer, an acrylic polymer is preferably used as a basic skeleton. As the basic skeleton of the acrylic polymer, there may be mentioned the acrylic polymer exemplified above.

There are no particular limitations on the method for introducing a carbon-carbon double bond into the acrylic polymer, and various methods can be employed, but molecular design is easy to introduce a carbon-carbon double bond into the side chain of the polymer. For example, after a monomer having a functional group is copolymerized with an acrylic polymer in advance, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is condensed Or an addition reaction is carried out.

Examples of combinations of these functional groups include a carboxylic acid group and an epoxy group, a carboxylic acid group and an aziridyl group, and a hydroxyl group and an isocyanate group. Among the combination of these functional groups, the combination of a hydroxyl group and an isocyanate group is suitable for easy reaction tracking. Moreover, as long as it is a combination which produces the acryl-type polymer which has the said carbon-carbon double bond by the combination of these functional groups, a functional group may be in either side of an acryl-type polymer and the said compound, In the said preferable combination, an acryl-type polymer is a hydroxyl group. It is suitable when the compound has an isocyanate group. In this case, as an isocyanate compound which has a carbon-carbon double bond, methacryloyl isocyanate, 2-methacryloyl oxyethyl isocyanate, m-isopropenyl (alpha), (alpha)-dimethylbenzyl isocyanate, etc. are mentioned, for example. have. As the acrylic polymer, those obtained by copolymerizing the hydroxy group-containing monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, ether-based compound of diethylene glycol monovinyl ether and the like exemplified above are used.

The intrinsic radiation curable pressure sensitive adhesive may be a base polymer having a carbon-carbon double bond (especially an acrylic polymer) alone, but the radiation curable monomer component and oligomer component may be blended to such an extent that the properties are not deteriorated. . The radiation curable oligomer component or the like is usually in the range of 30 parts by weight with respect to 100 parts by weight of the base polymer, and preferably in the range of 0 to 10 parts by weight.

The radiation-curable pressure-sensitive adhesive contains a photopolymerization initiator when it is cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone,? -Hydroxy- ?,? '- dimethylacetophenone, ? -Ketol compounds such as hydroxypropiophenone, 1-hydroxycyclohexyl phenyl ketone and the like; Methoxy acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl] -2-morpholinopropane Acetophenone compounds such as -1; Benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether; Ketal compounds such as benzyl dimethyl ketal; Aromatic sulfonyl chloride-based compounds such as 2-naphthalenesulfonyl chloride; A photoactive oxime-based compound such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; Benzophenone compounds such as benzophenone, benzoylbenzoic acid and 3,3'-dimethyl-4-methoxybenzophenone; Thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4- Thioxanthone-based compounds such as thionone, 2,4-diisopropylthioxanthone and the like; Camphorquinone; Halogenated ketones; Acylphosphine oxide; Acylphosphonates, and the like. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

Examples of the radiation-curing pressure-sensitive adhesive include a radiation-curable pressure-sensitive adhesive comprising a photopolymerizable compound such as an addition-polymerizable compound having two or more unsaturated bonds, an alkoxysilane having an epoxy group, and the like, which are disclosed in Japanese Patent Application Laid-open No. 60-196956, , An organic sulfur compound, a peroxide, an amine, and an onium salt-based compound, and an acrylic pressure-sensitive adhesive.

In the said radiation-curable adhesive layer 2, you may make it contain the compound colored by radiation irradiation as needed. By including the compound colored by radiation irradiation in the adhesive layer 2, only the irradiated part can be colored. That is, the part 2a corresponding to the workpiece | work attachment part 3a shown in FIG. 1 can be colored. Therefore, whether the radiation is irradiated to the pressure-sensitive adhesive layer 2 can be immediately determined by the naked eye, and it is easy to recognize the work attachment part 3a, and the joining of the work is easy. Moreover, when detecting a semiconductor element by an optical sensor etc., the detection precision becomes high, and a malfunction does not arise at the time of pick-up of a semiconductor element.

The compound colored by irradiation is colorless or light color before irradiation, but the compound becomes colored by irradiation. Preferred examples of such compounds include leuco dyes. As a leuco dye, a conventional triphenylmethane type, a fluorane type, a phenothiazine type, an auramin type, a spiropyran type is used preferably. Specifically 3- [N- (p-tolylamino)]-7-anilinofluorane, 3- [N- (p-tolyl) -N-methylamino] -7-anilinofluorane, 3- [ N- (p-tolyl) -N-ethylamino] -7-anilinofluorane, 3-diethylamino-6-methyl-7-anilinofluorane, crystal violet lactone, 4,4 ', 4 "- Trisdimethylaminotriphenylmethanol, 4,4 ', 4 "-trisdimethylaminotriphenylmethane, etc. are mentioned.

As a developer used suitably with these leuco dyes, electron acceptors, such as the initial polymer of the phenol formalin resin, aromatic carboxylic acid derivative, and activated clay which are used conventionally, are mentioned, and when changing a hue, various well-known It is also possible to use a combination of developed colorants.

The compound to be colored by such radiation irradiation may be included in the radiation curable adhesive after being dissolved in an organic solvent or the like once, and may be included in the pressure-sensitive adhesive as a fine powder. The use ratio of this compound is 10 weight% or less in the adhesive layer 2, Preferably it is 0.01-10 weight%, More preferably, it is 0.5-5 weight%. When the ratio of the compound exceeds 10% by weight, since the radiation irradiated to the pressure-sensitive adhesive layer 2 is excessively absorbed by the compound, the curing of the portion 2a of the pressure-sensitive adhesive layer 2 becomes insufficient, and the adhesive force sufficiently. This may not be degraded. On the other hand, in order to fully color, it is preferable to make the ratio of the said compound into 0.01 weight% or more.

In the case where the pressure-sensitive adhesive layer 2 is formed of a radiation curable pressure-sensitive adhesive, a part of the pressure-sensitive adhesive layer 2 is formed so that the pressure-sensitive adhesive force of the above-described portion 2a in the pressure-sensitive adhesive layer 2 becomes the adhesive force of the other portion 2b. You may irradiate.

As a method of forming the said part 2a in the said adhesive layer 2, after forming the radiation curable adhesive layer 2 in the base material 1, the method of irradiating and hardening a part of said part 2a by radiation partially Can be mentioned. Partial irradiation can be performed through the photomask which provided the pattern corresponding to parts 3b etc. other than the workpiece | work attachment part 3a. In addition, a method of irradiating ultraviolet rays in a spot manner to cure them may be used. Formation of the radiation-curable pressure-sensitive adhesive layer 2 can be performed by transferring onto the substrate 1 what is provided on the separator. Partial radiation hardening can also be performed to the radiation hardening type adhesive layer 2 formed on the separator.

In addition, when forming the adhesive layer 2 with a radiation-curable adhesive, the thing in which all or one part except the part corresponding to the workpiece | work attachment part 3a of at least one side of the base material 1 was shielded, After the radiation-curable pressure-sensitive adhesive layer 2 is formed thereon, the radiation can be irradiated to cure the portion corresponding to the workpiece attaching portion 3a to form the portion 2a in which the adhesive force is reduced. As a light-shielding material, a material capable of forming a photomask on a support film can be produced by printing, vapor deposition or the like. According to this manufacturing method, the adhesive film 10 which has the dicing film of this invention can be manufactured efficiently.

Moreover, when hardening inhibition by oxygen arises at the time of radiation irradiation, it is preferable to block oxygen (air) from the surface of the radiation curable adhesive layer 2 by arbitrary methods. For example, a method of covering the surface of the pressure-sensitive adhesive layer 2 with a separator or a method of irradiating radiation such as ultraviolet rays in a nitrogen gas atmosphere can be given.

Although the thickness of the adhesive layer 2 is not specifically limited, It is preferable that it is about 1-50 micrometers from the points of the prevention of the notch of a chip | tip cutting surface, the compatibility of the fixing holding of an adhesive layer, etc. Preferably 2 to 30 占 퐉, further preferably 5 to 25 占 퐉.

Although the thickness (total thickness in the case of a laminated body) of the adhesive films 3 and 3 'is not specifically limited, Preferably it is 1-50 micrometers, More preferably, it is 10-40 micrometers.

It is preferable that the adhesive films 3 and 3 'of the adhesive films 10 and 12 having the dicing film are protected by a separator (not shown). The separator has a function as a protective material that protects the adhesive films 3 and 3 'until they are used for practical purposes. In addition, a separator can further be used as a support base material at the time of transferring the adhesive films 3 and 3 'to the adhesive layer 2. The separator is peeled off when the workpiece is attached onto the adhesive films 3 and 3 'of the adhesive film having a dicing film. As the separator, a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine-based release agent, or a long-chain alkyl acrylate-based release agent can also be used.

The adhesive films 10 and 12 which have a dicing film concerning this embodiment are produced as follows, for example.

First, the base material 1 can be formed by a conventionally known film-forming method. Examples of the film forming method include a calender film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, and the like.

Next, after apply | coating an adhesive composition solution on the base material 1 and forming a coating film, the said coating film is dried (preheated crosslinking as needed) and the adhesive layer 2 is formed. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, gravure coating, and the like. The drying conditions are, for example, within a range of a drying temperature of 80 to 150 ° C and a drying time of 0.5 to 5 minutes. Moreover, after apply | coating an adhesive composition on a separator and forming a coating film, you may dry the coating film on the said dry conditions, and may form the adhesive layer 2. Thereafter, the pressure-sensitive adhesive layer 2 is bonded to the substrate 1 together with the separator. Thereby, the dicing film 11 is produced.

Then, a separator is peeled from the dicing film 11, and the adhesive layer 2 and the adhesive films 3 and 3 'are bonded together. The bonding can be performed by, for example, compression bonding. At this time, lamination temperature is not specifically limited, For example, 30-50 degreeC is preferable and 35-45 degreeC is more preferable. Moreover, linear pressure is not specifically limited, For example, 0.1-20 kgf / cm is preferable and 1-10 kgf / cm is more preferable. In this way, an adhesive film having a dicing film according to the present embodiment is obtained.

(Manufacturing Method of Semiconductor Device)

The manufacturing method of the semiconductor device of this invention includes the process of die-attaching a semiconductor chip to a to-be-adhered body using an adhesive film.

EMBODIMENT OF THE INVENTION Hereinafter, the manufacturing method of the semiconductor device of this invention is demonstrated, taking an example where a semiconductor device is manufactured using the adhesive film 10 which has a dicing film, referring FIG.

First, the semiconductor wafer 4 is crimped | bonded on the semiconductor wafer adhesion | attachment part 3a of the adhesive film 3 in the adhesive film 10 which has a dicing film, this is adhere | attached, and it is fixed (adhering process). This step is performed while pressurizing by pressurizing means, such as a crimping roll. At this time, it is preferable that it is 35-80 degreeC, and, as for an adhesion temperature, it is more preferable that it is 40-75 degreeC. Moreover, it is preferable that it is 1 * 10 <^5> -1 * 10 <^7> Pa, and it is more preferable that it is 2 * 10 <^5> -8 * 10 <^6> Pa. Moreover, as adhesion time, it is preferable that it is 1.5 to 60 second, and it is more preferable that it is 2 to 50 second.

Then, the semiconductor wafer 4 is diced. As a result, the semiconductor wafer 4 is cut to a predetermined size and individually fragmented to manufacture the semiconductor chip 5. Dicing is performed according to a normal method from the circuit surface side of the semiconductor wafer 4, for example. In addition, in this process, the cutting method called a full cut etc. which cut into the adhesive film 10 which has a dicing film, for example can be employ | adopted. The dicing apparatus used in this step is not particularly limited and conventionally known dicing apparatuses can be used. Moreover, since a semiconductor wafer is adhesively fixed by the adhesive film 10 which has a dicing film, chip notch and chip scattering can be suppressed, and the damage of the semiconductor wafer 4 can also be suppressed.

In order to peel the semiconductor chip adhesively fixed to the adhesive film 10 which has a dicing film, the semiconductor chip 5 is picked up. The pick-up method is not particularly limited, and various conventionally known methods can be employed. For example, the method of pushing up the individual semiconductor chip 5 by the needle from the adhesive film 10 side which has a dicing film, and picking up the pushed up semiconductor chip 5 by the pick-up apparatus, etc. are mentioned. have.

Here, pick-up is performed after irradiating an ultraviolet-ray to the said adhesive layer 2, when the adhesive layer 2 is an ultraviolet curable type | mold. Thereby, the adhesive force with respect to the adhesive film 3 of the adhesive layer 2 falls, and peeling of the semiconductor chip 5 becomes easy. As a result, the semiconductor chip 5 can be picked up without damaging it. Conditions, such as irradiation intensity | strength and irradiation time at the time of ultraviolet irradiation, are not specifically limited, What is necessary is just to set suitably as needed. In addition, the above-mentioned thing can be used as a light source used for ultraviolet irradiation.

The picked-up semiconductor chip 5 is adhesively fixed to the adherend 6 via the adhesive film 3 (die attach).

At this time, it is preferable that die attach temperature is 80-150 degreeC, It is more preferable that it is 85-140 degreeC, It is still more preferable that it is 90-130 degreeC. By setting it as 80 degreeC or more, the tensile storage elastic modulus of the adhesive film 3 can be prevented from becoming too high, and it can make it possible to bond suitably. Moreover, by setting it as 150 degrees C or less, generation | occurrence | production of the curvature after die attach can be prevented, and it can make it hard to produce breakage.

The die attach pressure is preferably 0.05 MPa to 5 MPa, more preferably 0.06 MPa to 4.5 MPa, further preferably 0.07 MPa to 4 MPa. By setting it as 0.05 Mpa or more, it can prevent that a nonuniformity arises in adhesion | attachment. Moreover, when it is 5 Mpa or less, the damage of the semiconductor chip 5 by a pressure can be made hard to occur.

The die attach time to which the die attach pressure is applied is preferably 0.1 to 5 seconds, more preferably 0.15 to 4.5 seconds, still more preferably 0.2 to 4 seconds. By setting it as 0.1 second or more, pressure can be added uniformly and it can prevent that a nonuniformity arises in adhesion | attachment. In addition, the yield can be improved by using 5 seconds or less.

Then, the semiconductor chip 5 and the to-be-adhered body 6 are adhere | attached by heat-processing the adhesive film 3.

The temperature of heat processing becomes like this. Preferably it is 80 degreeC or more, More preferably, it is 170 degreeC or more. The temperature of heat processing becomes like this. Preferably it is 200 degrees C or less, More preferably, it is 180 degrees C or less. Moreover, the time of heat processing becomes like this. Preferably it is 0.1 hour or more, More preferably, it is 0.5 hour or more. The time of the heat treatment is preferably 24 hours or less, more preferably 4 hours or less, and still more preferably 2 hours or less. If the temperature and time of heat processing are the said ranges, it can adhere | attach favorably.

Next, the wire bonding process of electrically connecting the front-end | tip of the terminal part (inner lead) of the to-be-adhered body 6 and the electrode pad (not shown) on the semiconductor chip 5 with the bonding wire 7 is performed. As the said bonding wire 7, a gold wire, an aluminum wire, a copper wire, etc. are used, for example. The temperature at the time of wire bonding becomes like this. Preferably it is 80 degreeC or more, More preferably, it is 120 degreeC or more, The said temperature becomes like this. Preferably it is 250 degrees C or less, More preferably, it is 175 degrees C or less. In addition, the heating time is performed for several seconds to several minutes (for example, 1 second-1 minute). Wiring is performed by using together the vibration energy by an ultrasonic wave and the crimping energy by application pressurization in the state heated so that it might be in the said temperature range.

Subsequently, a sealing step for sealing the semiconductor chip 5 with the sealing resin 8 is performed. This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step is performed by molding the sealing resin into a mold. As the sealing material 8, epoxy resin is used, for example. The heating temperature at the time of resin sealing becomes like this. Preferably it is 165 degreeC or more, More preferably, it is 170 degreeC or more, The said heating temperature becomes like this. Preferably it is 185 degrees C or less, More preferably, it is 180 degrees C or less. When the said heating temperature is in the said range, the adhesive film 3 can fill the unevenness | corrugation of the to-be-adhered body surface favorably by the injection pressure of the sealing resin 8.

Although heating time is not specifically limited, Preferably it is 1 minute or more, More preferably, it is 2 minutes or more, and the upper limit of a heating time becomes like this. Preferably it is 10 minutes or less, More preferably, it is 5 minutes or less.

In addition, the transfer pressure at the time of resin sealing becomes like this. Preferably it is 1KN or more, More preferably, it is 3KN or more, The upper limit of a transfer pressure becomes like this. Preferably it is 10KN or less, More preferably, it is 7KN or less.

Thereby, while hardening sealing resin, the semiconductor chip 5 and the to-be-adhered body 6 are adhered through the adhesive film 3. That is, in this invention, even if the post-curing process mentioned later is not performed, it can fix by the adhesive film 3 in this process, and it can reduce the number of manufacturing processes, and shorten the manufacturing period of a semiconductor device. Can contribute.

Subsequently, the sealing resin 8 which is insufficient in hardening is hardened completely in the said sealing process (postcure process). Thereby, when the adhesive film 3 is manufactured by the adhesive composition containing a thermosetting resin, even if the adhesive film 3 is not fully thermoset in a sealing process, the sealing resin 8 in this process is carried out. With this, complete thermosetting of the adhesive film 3 is possible. Although the heating temperature in this process changes with kinds of sealing resin, it exists in the range of 165-185 degreeC, for example, and a heat time is about 0.5 to 8 hours.

In the semiconductor device obtained by such a method, irregularities on the surface of the adherend are well buried, generation of voids is suppressed, and reliability is high.

<Examples>

EMBODIMENT OF THE INVENTION Hereinafter, although this invention is demonstrated in detail using an Example, this invention is not limited to a following example, unless the summary is exceeded. In addition, in each case, a part is a basis of weight as long as there is no special mention.

The component used in the Example is demonstrated.

Acrylic copolymer SG-P3: Teisan resin SG-P3 (Mw: 850,000, glass transition temperature: 12 degreeC) manufactured by Nagase ChemteX Co., Ltd.

Acrylic copolymer SG-600TEA: Teisan resin SG-600TEA (Mw: 1.2 million, glass transition temperature: -37 degreeC) manufactured by Nagase ChemteX Co., Ltd.

Acrylic copolymer S-2060: Aaron Tag S-2060 (Mw: 550,000, glass transition temperature: -22 degreeC) by Toagosei Co., Ltd. make

Epoxy resin HP-4700: HP-4700 (naphthalene type epoxy resin) by DIC Corporation

Epoxy resin EPPN501HY: EPPN501HY manufactured by Nippon Kayaku Co., Ltd.

Phenolic resin MEH-7851H: MEH-7851H manufactured by Meiwa Chemical Co., Ltd.

Phenolic resin MEH-7851SS: MEH-7851SS (phenol biphenylene) by Meiwa Chemical Co., Ltd.

Phenolic resin MEH-7800H: MEH-7800H by Meiwa Kasei Co., Ltd.

Crosslinking agent Tetrad C: Tetrad C (epoxy clock crosslinking agent) manufactured by Mitsubishi Gas Chemical Co., Ltd.

Filler SO-E2: SO-E2 (Spherical Silica) manufactured by Admatex Co., Ltd.

Filler MEK-ST: Nissan Chemical Industries, Ltd. MEK-ST (methyl ethyl ketone dispersion silica sol, particle diameter 10-20 nm, solid content concentration 30 mass%)

Filler MEK-ST-L: MEK-ST-L manufactured by Nissan Chemical Industries, Ltd. (methyl ethyl ketone dispersed silica sol, particle diameter 40-50 nm, solid content concentration 30 mass%)

Thermally active latent curing agent (curing catalyst) 2PZ: Cure sol (2-phenylimidazole) manufactured by Shikoku Chemical Co., Ltd.

The BGA board | substrate used by the Example is demonstrated.

BGA Substrate: TFBGA (surface irregularities 10㎛) manufactured by Nippon Sakito Kogyo Co., Ltd.

&Lt; Preparation of adhesive film &

According to the compounding ratio of Table 1, each component was dissolved in methyl ethyl ketone and the adhesive composition solution of 23.6 weight% of concentration was obtained.

After apply | coating this adhesive composition solution on the release process film (peeling liner) which consists of a polyethylene terephthalate film whose thickness which carried out the silicone mold release process was 38 micrometers, it dried at 130 degreeC for 2 minutes. This produced the 25-micrometer-thick adhesive film.

<Production of an adhesive film having a dicing film>

The obtained adhesive film was bonded on the adhesive layer of the dicing film (DU-300 by Nitto Denko Co., Ltd.) using the hand roller, and the adhesive film which has a dicing film was produced.

<Production of Semiconductor Chip with Adhesive Film>

The semiconductor wafer (8 inches in diameter, 0.6 mm in thickness) was back-polished to obtain a mirror wafer having a thickness of 100 µm. After peeling a separator from the adhesive film which has a dicing film, the mirror wafer was roll-bonded and bonded at 40 degreeC on this adhesive film, and dicing was further performed. Moreover, dicing was pull-cut so that one side might become square chip size of 10 mm.

Subsequently, the adhesive film which has a dicing film was stretched, and the expansion process which made the space | interval between each chip at predetermined intervals was performed. Moreover, the semiconductor chip was picked up by the pushing-up method by the needle from the base material side of the adhesive film which has a dicing film, and the semiconductor chip which has an adhesive film was obtained.

In addition, wafer grinding conditions, joining conditions, dicing conditions, expand conditions, and pick-up conditions are as follows.

&Lt; Wafer grinding condition &

Grinding device: Disco company DFG-8560

Semiconductor Wafer: 8 Inch Diameter

<Join conditions>

Attachment: Nitto Seiki MA-3000Ⅱ

Attachment Speedometer: 10㎜ / min

Attachment pressure: 0.15 MPa

Stage temperature at attachment: 40 ° C

<Dicing Condition>

Dicing device: Disco company make DFD-6361

Dicing Ring: 2-8-1 (Disco Corp.)

Dicing Speed: 30mm / sec

Dicing blade: NBC-ZH226J27HAAA made by disco company

Dicing Blade Speed: 30,000rpm

Blade height: 0.085 mm

Cut Method: Single Step Cut

Wafer chip size: 10.0㎜ square

<Expand condition>

Die Bonder: Shingawa Co., Ltd. Equipment: SPA-300

Retraction amount of the outer ring relative to the inner ring: 3 mm

<Pickup condition>

Die Bonding Device: Shingawa Co., Ltd.

Number of needles: 9

Needle lift amount: 300㎛

Needle push-up speed: 5 mm / sec

Collet Hold Time: 1 second

<Production of Substrate Having Semiconductor Chip>

Using the die bonder, the adhesive film of the semiconductor chip which has an adhesive film was stuck to the board | substrate for BGA, and it heated at 175 degreeC for 1 hour. This obtained the board | substrate which has a semiconductor chip.

The following evaluation was performed using the obtained adhesive film and the board | substrate which has a semiconductor chip. The results are shown in Table 1.

<175 ° C loss tangent (tanδ) after heating at 175 ° C for 1 hour

The adhesive film was cut out so that it might overlap, thickness 10mm, and length 40mm so that thickness might be 100 micrometers. Then, the sample 1 was produced by heating at 175 degreeC for 1 hour.

About sample 1, the viscoelasticity was measured on condition of the following using the dynamic viscoelasticity measuring apparatus (DMA) RSA3 by TAI Instruments.

Frequency: 1㎐

Measurement mode: Tensile

Interchuck distance: 22mm

Measurement temperature: -50 ℃ to 300 ℃

Heating rate: 10 ° C / min

Data Acquisition: Every 10 Seconds

The loss tangent (tanδ) (= loss modulus (E ") / storage modulus (E ') of each temperature obtained is approximated by a moving average of 10 sections (to obtain a moving average approximation curve) to obtain an approximate value of 175 ° C. It was.

The reason why the approximate value of 175 ° C is obtained by approximating with a moving average of 10 sections is that the loss elastic modulus of 175 ° C may not be constant, and it is difficult to read an accurate value.

<Peak temperature (degreeC) of loss tangent (tan-delta) after heating at 175 degreeC for 5 hours>

The adhesive film was piled up so that it might be set to thickness of 100 micrometers, and it cut out so that it might become width 10mm, and length 40mm. Then, it heated at 175 degreeC for 5 hours, and produced the sample 2.

About sample 2, the viscoelasticity was measured similarly to sample 1, and the moving average approximation curve was calculated | required. From the calculated moving average approximation curve, the peak temperature of the loss tangent tantan was read.

<Wire bonding property>

Using the board | substrate which has a semiconductor chip, wire bonding was performed at time 8 milliseconds, load 25gf, and temperature 170 degreeC.

The case where an error did not occur during wire bonding was made into (circle), and the case where an error occurred was made into x.

Landfill of voids

After wire bonding, resin sealing was performed on the conditions of temperature 175 degreeC, time 90 second, and transfer pressure of 5KN.

After sealing the resin, an image was obtained using an ultrasonic flaw detector (SAT: Scanning Acoustic Tomograph), and the case where no gap was observed between the adhesive film and the substrate was set to ○, and the observed case was ×.

<Overall judgment>

(1) 175 degreeC loss tangent (tan-delta) is 0.2-0.6, (2) wire bonding property is (circle), (3) embedding of a void is (circle), and (4) peak temperature is -30-75 degreeC (1) to (4) The case where all the requirements were satisfied was defined as ○, and the case where none of the requirements were satisfied was ×.

1: substrate
2: Pressure-sensitive adhesive layer
3, 3 ': adhesive film (thermosetting adhesive film)
4: Semiconductor wafer
5: Semiconductor chip
6: adherend
7: bonding wire
8: Sealing resin
10, 12: adhesive film having a dicing film
11: Dicing film

Claims (10)

Adhesive composition for semiconductor devices whose loss tangent (tan-delta) of 175 degreeC in the dynamic-viscoelasticity measurement after heating at 175 degreeC for 1 hour is 0.2-0.6. The method of claim 1,
The loss tangent (tanδ) is an adhesive composition for a semiconductor device, measured at an elevated temperature of 10 ° C./min, giving a shear distortion of 1 Hz. 3. The method according to claim 1 or 2,
After heating at 175 ° C. for 5 hours,
Adhesive composition for semiconductor devices whose temperature at which loss tangent (tan-delta) in a dynamic-viscoelasticity measurement becomes the maximum is -30-75 degreeC. The method of claim 1,
Adhesive composition for semiconductor devices whose content of a thermally active latent curing catalyst is 0.05 weight part or less with respect to 100 weight part of organic resin components. The method of claim 1,
Adhesive composition for semiconductor devices whose content of an acrylic resin is 60 to 100 weight% in 100 weight% of organic resin components. Adhesive film for semiconductor devices whose loss tangent (tan-delta) of 175 degreeC in the dynamic-viscoelasticity measurement after heating at 175 degreeC for 1 hour is 0.2-0.6. The method according to claim 6,
Adhesive film for semiconductor devices used as a die attach film. The adhesive film which has a dicing film in which the adhesive film for semiconductor devices of Claim 6 or 7 is laminated | stacked on the dicing film. The manufacturing method of the semiconductor device containing the process of die-attaching a semiconductor chip to a to-be-adhered body using the adhesive film for semiconductor devices of Claim 7. The semiconductor device obtained by the manufacturing method of Claim 9.

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