JP5456712B2 - Thermosetting die bond film - Google Patents

Description

  The present invention relates to a thermosetting die-bonding film used when a semiconductor element such as a semiconductor chip is fixed on an adherend such as a substrate or a lead frame. The present invention also relates to a dicing die bond film in which the thermosetting die bond film and the dicing film are laminated.

  Conventionally, in the manufacturing process of a semiconductor device, a dicing die-bonding film that adheres and holds a semiconductor wafer in a dicing process and also provides an adhesive layer for chip fixation necessary for a mounting process has been used (see below). Patent Document 1). This dicing die-bonding film is configured by sequentially laminating a pressure-sensitive adhesive layer and an adhesive layer on a supporting substrate. That is, after the semiconductor wafer is diced while being held by the adhesive layer, the support base is stretched, and the semiconductor chip is picked up together with the die bond film. Further, a semiconductor chip is die-bonded on the die pad of the lead frame via a die-bonding film.

  However, in recent years, with increasing size and thickness of semiconductor wafers, semiconductor chips may be bonded in a warped state during die bonding. In such a case, sufficient pressure is not applied at the peripheral edge of the semiconductor chip, and as a result, micro bubbles having a diameter of about 10 to 100 μm may be generated. In addition, due to the microvoids, local sinks (dents) may also occur at the peripheral edge of the semiconductor chip. As a result, the production yield of the semiconductor device is reduced due to the presence of the microvoids and local sink marks. In other words, microvoids or the like cause peeling in a moisture-resistant solder reflow test used for reliability evaluation of semiconductor-related parts, for example, causing a decrease in reliability. Further, during resin molding, the mold resin enters the peripheral portion of the semiconductor chip where microvoids and the like are present, causing damage to the semiconductor chip.

JP 60-57342 A

  The present invention has been made in view of the above problems, and suppresses the occurrence of microvoids and local sink marks at the peripheral edge when die-bonding a semiconductor element on an adherend, and as a result, An object of the present invention is to provide a thermosetting die-bonding film capable of improving the manufacturing yield of a semiconductor device.

  The inventors of the present application have studied a thermosetting die-bonding film in order to solve the conventional problems. As a result, when the semiconductor chip is die-bonded on the adherend by increasing the compounding amount of the epoxy resin and the phenol resin, which are the constituent materials of the thermosetting die-bonding film, as compared with the conventional one, Was found to improve the adhesion, and the present invention was completed.

  That is, the thermosetting die-bonding film according to the present invention is a thermosetting die-bonding film used in manufacturing a semiconductor device, and includes at least an epoxy resin, a phenol resin, and an acrylic copolymer, and the epoxy resin and the phenol resin. When the total weight of X is X and the weight of the acrylic copolymer is Y, the ratio X / Y is 0.7 to 5.

  As in the above configuration, a thermosetting die-bonding film that can be fixed on an adherend in a liquid state is obtained by making the total weight of the epoxy resin and the phenol resin larger than the weight of the acrylic copolymer. It is done. Thereby, for example, even when a semiconductor element such as a semiconductor chip having a large size or a thin film is die-bonded on an adherend, the adhesion can be improved at the peripheral edge of the semiconductor element. As a result, the generation of minute bubbles (microvoids) and local sinks (dents) can be reduced. Thereby, also in the moisture-resistant solder reflow test used for the reliability evaluation of semiconductor-related parts, generation | occurrence | production of peeling of a thermosetting die-bonding film can be prevented, and a reliability improvement can be aimed at. In addition, even during resin molding, the mold resin can be prevented from entering the peripheral portion of the semiconductor element, and damage to the semiconductor element can be prevented.

  Moreover, in the said structure, it is preferable that the melt viscosity in 120-130 degreeC exists in the range of 500-3500 Pa.s. As a result, for example, when wire bonding is performed on a semiconductor element fixed on a thermosetting die bond film, shear deformation occurs on the bonding surface between the die bond film and the adherend due to ultrasonic vibration or heating. Can be prevented. As a result, it is possible to increase the success rate of wire bonding and manufacture a semiconductor device with further improved yield.

  In the above configuration, the acrylic copolymer preferably includes 10 to 60% by weight of butyl acrylate and 40 to 90% by weight of ethyl acrylate.

  Moreover, in the said structure, it is preferable that the glass transition point of the said acrylic copolymer exists in the range of -30-30 degreeC. Thereby, for example, it is possible to prevent the semiconductor element from inclining in the sealing process, and to prevent peeling between the die bond film and the adherend during the solder reflow process.

  In the said structure, it is preferable that the melt viscosity in 120-130 degreeC of the said epoxy resin exists in the range of 0.05-7 Pa.s. Moreover, in the said structure, it is preferable that the melt viscosity in 120-130 degreeC of the said phenol resin exists in the range of 0.3-35 Pa.s.

  The dicing die-bonding film according to the present invention has a structure in which the thermosetting die-bonding film described above is laminated on the dicing film in order to solve the above-described problems.

  In the semiconductor device, it is preferable that minute bubbles and local sinks (dents) do not exist in the peripheral portion of the semiconductor element die-bonded on the adherend. When a semiconductor device is manufactured using the dicing die-bonding film of the present invention, the generation of such minute bubbles and local sinks (dents) can be reduced, so that the semiconductor element can be prevented from being damaged, and the throughput can be reduced. Can be improved.

The present invention has the following effects by the means described above.
That is, according to the present invention, when an epoxy resin, a phenol resin and an acrylic copolymer are included, the total weight of the epoxy resin and the phenol resin is X, and the weight of the acrylic copolymer is Y, the ratio X / By setting Y to 0.7 to 5, for example, fine bubbles (microvoids) or local sinks (dents) in the peripheral portion of a large and thin semiconductor element die-bonded on the adherend Can be reduced. As a result, durability against the moisture-resistant solder reflow test is improved, and in the case of resin molding, the mold resin can be prevented from entering the peripheral portion of the semiconductor element, and the semiconductor element can be prevented from being damaged.

It is a cross-sectional schematic diagram which shows the dicing die-bonding film which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows the dicing die-bonding film which concerns on other embodiment of this invention. It is a cross-sectional schematic diagram which shows the example which mounted the semiconductor chip via the die-bonding film which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows the example which mounted the semiconductor chip three-dimensionally through the said die-bonding film. It is a cross-sectional schematic diagram which shows the example which mounted two-dimensionally the semiconductor chip through the spacer using the said die-bonding film.

  An example of the thermosetting die-bonding film of the present invention (hereinafter referred to as “die-bonding film”) laminated on a dicing film in which an adhesive layer 2 is laminated on a substrate 1 as shown in FIG. This will be described below.

  The die bond films 3, 3 'of the present invention include at least an epoxy resin, a phenol resin, and an acrylic copolymer. Further, when the total weight of the epoxy resin and the phenol resin is X and the weight of the acrylic copolymer is Y, the ratio X / Y is 0.7 to 5, and 0.8 to 4. Preferably, it is 1-3. By making X / Y into the said numerical range, the phenol resin which acts as a hardening | curing agent of the said epoxy resin and an epoxy resin is contained more than an acrylic copolymer. Thereby, melt viscosity can be reduced and wettability with an adherend can be improved. As a result, the melt viscosity at 120 to 130 ° C. of the die bond films 3 and 3 ′ can be 3500 Pa · s or less, and minute bubbles (in the peripheral edge of the semiconductor chip (semiconductor element) die-bonded on the adherend ( The occurrence of micro voids and local sink marks (dents) can be reduced. If X / Y is greater than 5, there may be a problem that it is difficult to process the die bond films 3, 3 'into a film.

  The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type. Biphenyl type, naphthalene type, fluorene type, phenol novolac type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., bifunctional epoxy resin or polyfunctional epoxy resin, or hydantoin type, trisglycidyl isocyanurate Type or glycidylamine type epoxy resin is used. These can be used alone or in combination of two or more. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like. The epoxy resin contains little ionic impurities that corrode semiconductor elements.

  Furthermore, the phenol resin acts as a curing agent for the epoxy resin. Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. These can be used alone or in combination of two or more. Of these phenol resins, biphenyl type phenol novolac resins and phenol aralkyl resins represented by the following chemical formula are preferred. This is because the connection reliability of the semiconductor device can be improved.

尚、前記ｎは０〜１０の自然数であることが好ましく、０〜５の自然数であることがより好ましい。前記数値範囲内にすることにより、ダイボンドフィルム３、３’の流動性の確保が図れる。

The n is preferably a natural number of 0 to 10, and more preferably a natural number of 0 to 5. By making it within the numerical range, it is possible to secure the fluidity of the die bond films 3 and 3 ′.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  The melt viscosity at 120 to 130 ° C. of the epoxy resin is preferably in the range of 0.05 to 7 Pa · s, more preferably in the range of 0.07 to 5 Pa · s, and in the range of 0.1 to 3 Pa · s. Particularly preferred. Further, the melt viscosity at 120 to 130 ° C. of the phenol resin is preferably in the range of 0.3 to 35 Pa · s, more preferably in the range of 0.4 to 20 Pa · s, and in the range of 0.5 to 10 Pa · s. The inside is particularly preferable.

  The monomer component used for the acrylic copolymer is not particularly limited, and examples thereof include butyl acrylate and ethyl acrylate. In the acrylic copolymer of the present invention, a copolymer comprising a butyl acrylate within a range of 10 to 60% by weight and an ethyl acrylate within a range of 40 to 90% by weight with respect to all monomer components. Coalescence is preferred.

  Moreover, it does not specifically limit as another monomer component copolymerizable with the said monomer component, For example, an acrylonitrile etc. are mentioned. These copolymerizable monomer components are preferably used in an amount of 1 to 20% by weight based on the total monomer components. By incorporating other monomer components within the numerical range, modification of cohesive force, adhesiveness, etc. can be achieved.

  The polymerization method of the acrylic copolymer is not particularly limited, and conventionally known methods such as a solution polymerization method, a cage polymerization method, a suspension polymerization method, and an emulsion polymerization method can be employed.

  The glass transition point (Tg) of the acrylic copolymer is preferably -30 to 30 ° C, and more preferably -20 to 15 ° C. Heat resistance can be ensured by setting the glass transition point to -30 ° C or higher. On the other hand, when the temperature is 30 ° C. or less, the effect of preventing chip jump after dicing in a wafer having a rough surface state is improved.

  The weight average molecular weight of the acrylic copolymer is preferably 100,000 or more, more preferably 600,000 to 1,200,000, and particularly preferably 700,000 to 1,000,000. By setting the weight average molecular weight to 100,000 or more, it is excellent in adhesion at a high temperature to the surface of an adherend such as a wiring board, and heat resistance can be improved. When the weight average molecular weight is 1,200,000 or less, it can be easily dissolved in an organic solvent. The weight average molecular weight is a polystyrene equivalent value using a standard polystyrene calibration curve by gel permeation chromatography (GPC).

  Examples of the filler include inorganic fillers and organic fillers. Inorganic fillers are preferred from the standpoints of improving handleability and thermal conductivity, adjusting melt viscosity, and imparting thixotropic properties.

  The inorganic filler is not particularly limited, for example, silica, aluminum hydroxide, calcium hydroxide, magnesium hydroxide, antimony trioxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, Examples thereof include aluminum oxide, aluminum nitride, aluminum borate, boron nitride, crystalline silica, and amorphous silica. These can be used alone or in combination of two or more. From the viewpoint of improving thermal conductivity, aluminum oxide, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferable. Further, from the viewpoint of balance with the adhesiveness of the die bond film 3, silica is preferable. Examples of the organic filler include polyimide, polyamideimide, polyetheretherketone, polyetherimide, polyesterimide, nylon, and silicone. These can be used alone or in combination of two or more.

  The average particle diameter of the filler is preferably 0.005 to 10 μm, and more preferably 0.05 to 1 μm. When the average particle size of the filler is 0.005 μm or more, the wettability with respect to the adherend can be improved, and a decrease in adhesiveness can be suppressed. On the other hand, by setting the average particle size to 10 μm or less, the reinforcing effect on the die-bonding film 3 due to the addition of the filler can be enhanced, and the heat resistance can be improved. In addition, you may use it combining the fillers from which an average particle diameter differs mutually. Moreover, the average particle diameter of a filler is the value calculated | required, for example with the photometric type particle size distribution meter (The product made from HORIBA, apparatus name; LA-910).

  The filler content is preferably more than 0 parts by weight and less than 80 parts by weight, more than 0 parts by weight and less than 70 parts by weight with respect to 100 parts by weight of the total of the epoxy resin, phenol resin and acrylic copolymer. It is more preferable that When the filler content is 0 part by weight, there is no reinforcing effect due to the filler addition, and the heat resistance of the die bond film 3 tends to decrease. On the other hand, when the content exceeds 80 parts by weight, the wettability with respect to the adherend is lowered, and the adhesiveness tends to be lowered.

  The shape of the filler is not particularly limited, and for example, a spherical or ellipsoidal shape can be used.

  Moreover, the die-bonding film 3 can mix | blend another additive suitably as needed. Examples of other additives include flame retardants, silane coupling agents, ion trapping agents, and the like.

  Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more.

  Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more.

  Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more.

  The thermosetting acceleration catalyst for the epoxy resin and the phenol resin is not particularly limited, and for example, a salt composed of any one of a triphenylphosphine skeleton, an amine skeleton, a triphenylborane skeleton, a trihalogenborane skeleton, and the like is preferable.

  Moreover, the melt viscosity at 120 to 130 ° C. of the die bond film 3 is preferably 500 to 3500 Pa · s, more preferably 500 to 3300 Pa · s, and particularly preferably 500 to 3000 Pa · s. By setting the melt viscosity within the above numerical range, it is possible to reduce generation of minute bubbles (microvoids) and local sinks (dents) in the peripheral portion of the semiconductor element die-bonded on the adherend. As a result, peeling of the die-bonding film 3 and damage to the semiconductor element in the moisture-resistant solder reflow test are prevented, and a highly reliable semiconductor device can be manufactured.

  The storage elastic modulus at 260 ° C. after the thermosetting of the die bond film 3 is preferably 0.5 MPa or more, more preferably 0.5 to 100 MPa, and particularly preferably 0.5 to 50 MPa. By setting the storage elastic modulus to 0.5 MPa or more, a highly reliable semiconductor device can be manufactured even in a moisture-resistant solder reflow test or the like.

  Although the thickness (in the case of a laminated body) of the die-bonding film 3 is not specifically limited, For example, it is about 5-100 micrometers, Preferably it is about 5-50 micrometers.

  In addition, a die-bonding film can be made into the structure which consists only of a single layer of an adhesive bond layer, for example. Alternatively, a thermoplastic resin having a different glass transition temperature and a thermosetting resin having a different thermosetting temperature may be appropriately combined to form a multilayer structure having two or more layers. In addition, since cutting water is used in the dicing process of the semiconductor wafer, the die-bonding film may absorb moisture and have a moisture content higher than that of the normal state. When bonded to a substrate or the like with such a high water content, water vapor may accumulate at the bonding interface at the stage of after-curing and float may occur. Therefore, the die bond film has a structure in which a core material having high moisture permeability is sandwiched between adhesive layers, so that water vapor diffuses through the film at the after-curing stage, and this problem can be avoided. . From this viewpoint, the die bond film may have a multilayer structure in which an adhesive layer is formed on one side or both sides of the core material.

  Examples of the core material include films (for example, polyimide films, polyester films, polyethylene terephthalate films, polyethylene naphthalate films, polycarbonate films), resin substrates reinforced with glass fibers and plastic non-woven fibers, mirror silicon wafers, silicon substrates Or a glass substrate etc. are mentioned.

  The die bond film 3 is preferably protected by a separator (not shown). The separator has a function as a protective material for protecting the die bond film until it is put into practical use. Moreover, a separator can further be used as a support base material at the time of transferring the die-bonding film 3 to a dicing film. The separator is peeled off when the workpiece is stuck on the die bond film. As the separator, a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine release agent, or a long-chain alkyl acrylate release agent can be used.

  As said dicing film, what laminated | stacked the adhesive layer 2 on the base material 1 is mentioned, for example. The die bond film 3 is laminated on the pressure-sensitive adhesive layer 2. Moreover, as shown in FIG. 2, the structure which formed the die-bonding film 3 'only in the semiconductor wafer affixing part may be sufficient.

  The substrate 1 serves as a strength matrix for the dicing die-bonding films 10 and 11. For example, polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, ethylene-acetic acid Vinyl copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfur De, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), paper, and the like. When the pressure-sensitive adhesive layer 2 is an ultraviolet curable type, the substrate 1 is preferably one that is permeable to ultraviolet rays.

  Moreover, as a material of the base material 1, polymers, such as the crosslinked body of the said resin, are mentioned. The plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary. According to the resin sheet to which heat shrinkability is imparted by stretching treatment or the like, the adhesive area between the pressure-sensitive adhesive layer 2 and the die bond films 3 and 3 ′ is reduced by thermally shrinking the base material 1 after dicing, so that the semiconductor chip Can be easily recovered.

  The surface of the substrate 1 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed.

  The base material 1 can be used by appropriately selecting the same kind or different kinds, and a blend of several kinds can be used as necessary. Further, in order to impart antistatic ability to the base material 1, a conductive material vapor deposition layer having a thickness of about 30 to 500 mm made of metal, alloy, oxides thereof, or the like is provided on the base material 1. be able to. The substrate 1 may be a single layer or two or more layers.

  The thickness of the substrate 1 is not particularly limited and can be appropriately determined, but is generally about 5 to 200 μm.

  In addition, various additives (for example, a colorant, a filler, a plasticizer, an anti-aging agent, an antioxidant, a surfactant, a flame retardant, etc.) are added to the substrate 1 as long as the effects of the present invention are not impaired. May be included.

  The pressure-sensitive adhesive layer 2 includes an ultraviolet curable pressure-sensitive adhesive. The UV curable pressure-sensitive adhesive can easily reduce its adhesive strength by increasing the degree of crosslinking by irradiation of ultraviolet light, and only the portion 2a corresponding to the semiconductor wafer attachment portion of the pressure-sensitive adhesive layer 2 shown in FIG. By irradiating with ultraviolet rays, a difference in adhesive strength with the other portion 2b can be provided.

  Further, by curing the ultraviolet curable pressure-sensitive adhesive layer 2 in accordance with the die-bonding film 3 ′ shown in FIG. 2, the portion 2 a having a significantly reduced adhesive force can be easily formed. Since the die bond film 3 ′ is attached to the portion 2 a that has been cured and has reduced adhesive strength, the interface between the portion 2 a and the die bond film 3 ′ of the pressure-sensitive adhesive layer 2 has a property of being easily peeled off during pick-up. On the other hand, the portion not irradiated with ultraviolet rays has a sufficient adhesive force, and forms the portion 2b.

  As described above, in the pressure-sensitive adhesive layer 2 of the dicing die-bonding film 10 shown in FIG. 1, the portion 2b formed of the uncured ultraviolet-curing pressure-sensitive adhesive adheres to the die-bonding film 3 and is used when dicing. A holding force can be secured. Thus, the ultraviolet curable pressure-sensitive adhesive can support the die bond film 3 for fixing the semiconductor chip to an adherend such as a substrate with a good balance of adhesion and peeling. In the pressure-sensitive adhesive layer 2 of the dicing die-bonding film 11 shown in FIG. 2, the portion 2b can fix the wafer ring. The adherend 6 is not particularly limited, and examples thereof include various substrates such as a BGA substrate, a lead frame, a semiconductor element, and a spacer.

  As the ultraviolet curable pressure-sensitive adhesive, those having an ultraviolet curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. Examples of the ultraviolet curable pressure-sensitive adhesive include an additive-type ultraviolet curable pressure-sensitive adhesive in which an ultraviolet curable monomer component or an oligomer component is blended with a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive. Can be illustrated.

  The pressure-sensitive adhesive is an acrylic pressure-sensitive adhesive based on an acrylic polymer from the standpoint of cleanability with an organic solvent such as ultrapure water or alcohol for electronic components that are difficult to contaminate semiconductor wafers and glass. Is preferred.

  As said acrylic polymer, what consists of a monomer composition containing an acrylic ester and a hydroxyl-group containing monomer is mentioned. However, it is preferable not to include a carboxyl group-containing monomer.

As the acrylic ester, it is preferable to use a monomer represented by the chemical formula CH ₂ ═CHCOOR (wherein R is an alkyl group having 6 to 10 carbon atoms, more preferably 8 to 9 carbon atoms). If the number of carbon atoms is less than 6, the peel force may become too large and the pick-up property may be reduced. On the other hand, if the number of carbon atoms exceeds 10, the adhesion or adhesion to the die bond film is lowered, and as a result, chip fly may occur during dicing.

  Examples of the monomer represented by the chemical formula include hexyl acrylate, heptyl acrylate, octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, nonyl acrylate, isononyl acrylate, decyl acrylate, and isodecyl acrylate. Is mentioned. Among these monomers, those having 8 to 9 carbon atoms in R of the alkyl group are preferable, and specifically, 2-ethylhexyl acrylate and isooctyl acrylate are preferable. In addition, the monomer illustrated above can be used individually or in combination of 2 or more types.

  Moreover, 50 to 99 weight% is preferable with respect to all the monomer components, and, as for content of the said acrylic acid ester, 70 to 90 weight% is more preferable. If the content is less than 50% by weight, the peel force may be excessively increased and the pickup property may be deteriorated. However, if it exceeds 99% by weight, the adhesiveness is lowered and chip skipping may occur during dicing.

  The acrylic polymer may contain an acrylic ester other than the monomer represented by the chemical formula as a monomer component. Examples of such an acrylate ester include an acrylate ester other than the monomer represented by the above chemical formula, an acrylate ester having an aromatic ring (for example, an acrylate aryl ester such as phenyl acrylate), and an alicyclic ring. Acrylic acid ester having a hydrocarbon group (for example, acrylic acid cycloalkyl ester such as cyclopentyl acrylate and cyclohexyl acrylate, isobornyl acrylate, etc.) and the like. Of these monomer components, the alkyl acrylates and cycloalkyl acrylates are preferred, and the alkyl acrylates are particularly preferred. The illustrated acrylic esters can be used alone or in combination of two or more.

  Examples of the acrylic acid alkyl ester other than the monomer represented by the chemical formula include, for example, methyl acrylate, ethyl acrylate, propyl acrylate, isopropyl acrylate, butyl acrylate, isobutyl acrylate, s-butyl acrylate, and acrylic acid. t-butyl, pentyl acrylate, isopentyl acrylate, etc. alkyl ester having 5 or less carbon atoms; undecyl acrylate, dodecyl acrylate, tridecyl acrylate, tetradecyl acrylate, hexadecyl acrylate, octadecyl acrylate And alkyl acrylates having 11 or more (preferably 11 to 30) carbon atoms in the alkyl group such as eicosyl acrylate.

  In addition, the acrylic acid alkyl ester such as the monomer represented by the chemical formula may be a linear or branched alkyl alkyl ester.

  The acrylic polymer contains a hydroxyl group-containing monomer copolymerizable with the acrylate ester as an essential component. Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, ( Examples thereof include 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate, and the like. These monomers can be used alone or in combination of two or more.

  The content of the hydroxyl group-containing monomer is preferably in the range of 1 to 30% by weight and more preferably in the range of 3 to 10% by weight with respect to the total monomer components. When the content is less than 1% by weight, the cohesive force of the pressure-sensitive adhesive is lowered, and the pickup property may be lowered. On the other hand, when the content exceeds 30% by weight, the polarity of the pressure-sensitive adhesive becomes high, and the interaction with the die bond film becomes high, so that peeling becomes difficult.

  The acrylic polymer may contain units corresponding to other monomer components copolymerizable with the acrylate ester or the hydroxyl group-containing monomer, if necessary, for the purpose of modifying cohesive force, heat resistance, etc. Good. Examples of such other monomer components include methacrylic acid such as methyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate, butyl methacrylate, isobutyl methacrylate, s-butyl methacrylate, and t-butyl methacrylate. Acid esters; acid anhydride monomers such as maleic anhydride and itaconic anhydride; styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl ( Sulfonic acid group-containing monomers such as (meth) acrylate and (meth) acryloyloxynaphthalenesulfonic acid; phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate; styrene, vinyltoluene, α-methylstyrene, etc. Tylene monomers; olefins or dienes such as ethylene, butadiene, isoprene, isobutylene; halogen atom-containing monomers such as vinyl chloride; fluorine atom-containing monomers such as fluorine (meth) acrylate; acrylamide, acrylonitrile, etc. Can be mentioned.

  As described above, the acrylic polymer preferably does not contain a carboxyl group-containing monomer. When a carboxyl group-containing monomer is included, the adhesion between the pressure-sensitive adhesive layer 2 and the die bond film 3 increases due to the reaction between the carboxyl group and the epoxy group of the epoxy resin in the die bond film 3, and the peelability of both decreases. Because it does. Examples of such carboxyl group-containing monomers include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid.

  The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be performed by any method such as solution polymerization (for example, radical polymerization, anionic polymerization, cationic polymerization, etc.), emulsion polymerization, bulk polymerization, suspension polymerization, photopolymerization (for example, ultraviolet (UV) polymerization). . From the viewpoint of preventing contamination of a clean adherend, the content of the low molecular weight substance is preferably small. From this point, the number average molecular weight of the acrylic polymer is preferably about 350,000 to 1,000,000, more preferably about 450,000 to 800,000.

  In addition, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive. Generally, it is preferable to add about 5 parts by weight or less, and further 0.1 to 5 parts by weight with respect to 100 parts by weight of the base polymer. Furthermore, you may use additives, such as conventionally well-known various tackifier and anti-aging agent, other than the said component as needed to an adhesive.

  Examples of the ultraviolet curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethanetetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and penta. Examples include erythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the ultraviolet curable oligomer component include urethane, polyether, polyester, polycarbonate, and polybutadiene oligomers, and those having a molecular weight in the range of about 100 to 30000 are suitable. The blending amount of the ultraviolet curable monomer component and oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the pressure-sensitive adhesive strength of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  In addition to the additive-type UV-curable pressure-sensitive adhesive described above, the UV-curable pressure-sensitive adhesive has a carbon-carbon double bond in the polymer side chain, main chain, or main chain terminal as a base polymer. Intrinsic ultraviolet curable pressure sensitive adhesives using Intrinsic UV curable pressure-sensitive adhesive does not need to contain an oligomer component or the like, which is a low molecular weight component, or does not contain much, so that the oligomer component or the like does not move through the pressure-sensitive adhesive over time and is stable. It is preferable because an adhesive layer having a layer structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, those having an acrylic polymer as a basic skeleton are preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method for introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted. However, it is easy in molecular design to introduce a carbon-carbon double bond into a polymer side chain. . For example, after a monomer having a functional group is previously copolymerized with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into an ultraviolet curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. Moreover, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the preferable combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

  As the intrinsic ultraviolet curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the ultraviolet curable monomer does not deteriorate the characteristics. Components and oligomer components can also be blended. The UV-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  The ultraviolet curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) Acetophenone compounds such as -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfonyl chloride Aromatic sulfonyl chloride compounds such as 1; photoactive oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

  Examples of the ultraviolet curable pressure-sensitive adhesive include photopolymerizable compounds such as addition polymerizable compounds having two or more unsaturated bonds and alkoxysilanes having an epoxy group disclosed in JP-A-60-196956. And a rubber-based pressure-sensitive adhesive and an acrylic pressure-sensitive adhesive containing a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, and an onium salt-based compound.

  Examples of the method for forming the portion 2a on the pressure-sensitive adhesive layer 2 include a method in which after the ultraviolet curable pressure-sensitive adhesive layer 2 is formed on the substrate 1, the portion 2a is partially irradiated with ultraviolet rays to be cured. . The partial ultraviolet irradiation can be performed through a photomask on which a pattern corresponding to the portion 3b other than the semiconductor wafer bonding portion 3a is formed. Moreover, the method etc. of irradiating and hardening | curing an ultraviolet-ray spotly are mentioned. The ultraviolet curable pressure-sensitive adhesive layer 2 can be formed by transferring what is provided on the separator onto the substrate 1. Partial UV curing can also be performed on the UV curable pressure-sensitive adhesive layer 2 provided on the separator.

  In the pressure-sensitive adhesive layer 2 of the dicing die-bonding film 10, a part of the pressure-sensitive adhesive layer 2 may be irradiated with ultraviolet rays so that the adhesive strength of the portion 2a <the adhesive strength of the other portion 2b. That is, after forming the ultraviolet-curing pressure-sensitive adhesive layer 2 on the substrate 1, at least one side of the substrate 1 is shielded from all or part of the portion other than the portion corresponding to the semiconductor wafer pasting portion 3 a. By irradiating with ultraviolet rays, the portion corresponding to the semiconductor wafer pasting portion 3a can be cured to form the portion 2a with reduced adhesive strength. As the light shielding material, a material that can be a photomask on a support film can be produced by printing or vapor deposition. Thereby, the dicing die-bonding film 10 of this invention can be manufactured efficiently.

  In the case where curing inhibition by oxygen occurs during ultraviolet irradiation, it is desirable to block oxygen (air) from the surface of the ultraviolet curable pressure-sensitive adhesive layer 2. Examples of the method include a method of coating the surface of the pressure-sensitive adhesive layer 2 with a separator, and a method of irradiating ultraviolet rays such as ultraviolet rays in a nitrogen gas atmosphere.

  The thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, but is preferably about 1 to 50 μm from the viewpoint of preventing chipping of the chip cut surface and compatibility of fixing and holding the adhesive layer. Preferably it is 2-30 micrometers, Furthermore, 5-25 micrometers is preferable. The pressure-sensitive adhesive layer 2 may be a single layer or may be a laminate of a plurality of layers.

The shear storage modulus of the pressure-sensitive adhesive layer 2 is preferably 5 × 10 ⁴ to 1 × 10 ¹⁰ Pa, more preferably 1 × 10 ⁵ to 1 × 10 ⁸ Pa at 23 ° C. and 150 ° C. preferable. When the shear storage modulus is less than 5 × 10 ⁴ Pa, it may be difficult to peel off the pressure-sensitive adhesive layer 2 and the die bond films 3 and 3 ′. On the other hand, if the shear storage modulus exceeds 1 × 10 ¹⁰ Pa, the adhesion between the pressure-sensitive adhesive layer 2 and the die bond films 3 and 3 ′ may be lowered. The shear storage elastic modulus of the pressure-sensitive adhesive layer 2 is a value obtained as follows. That is, first, the pressure-sensitive adhesive layer is formed into a cylindrical shape having a thickness of about 1.5 mm and a diameter of 7.9 mm. Next, using an ARES viscoelasticity measuring device manufactured by Rheometric Scientific as a dynamic viscoelasticity measuring device, each adhesive layer was attached to a jig of a parallel plate, and a shear strain of a frequency of 1 Hz was applied. The temperature is changed in the temperature range of from 150 ° C. to 150 ° C. at a heating rate of 5 ° C./min. The shear storage elastic modulus at 23 ° C. and 150 ° C. is obtained by measuring the elastic modulus at this time. In addition, when the adhesive layer 2 is a radiation curing type, the value of the shear storage elastic modulus is a value after radiation curing. Further, the shear storage elastic modulus can be appropriately adjusted by adding an external cross-linking agent, for example.

Preferably the surface free energy of the bonding surface of the die-bonding film 3 of the pressure-sensitive adhesive layer 2 is not more than 30 mJ / ^{m 2,} more preferably from 15~30mJ / ^{m 2,} is 20~28mJ / ^{m 2} It is particularly preferred. When surface free energy exceeds 30 mJ / m < ² >, the adhesiveness of the adhesive layer 2 with respect to the die-bonding film 3 will become large too much, and pick-up property may fall. The surface free energy of the pressure-sensitive adhesive layer 2 can be appropriately adjusted, for example, by adding an external cross-linking agent. The surface free energy can be calculated by the following method. That is, the contact angle (θ (rad)) is measured for each surface of the pressure-sensitive adhesive layer using water and methylene iodide. Next, the surface free energy (γ _s ) is calculated by the following equation using this measured value and a value known from the literature as the surface free energy value of the contact angle measurement liquid.

The values of surface free energy known from the literature are as follows.
Water: dispersed component (γ _L ^d ) 21.8 mJ / m ² , polar component (γ _L ^p ) 51.0 mJ / m ²
Methylene iodide: dispersion component (γ _L ^d ) 49.5 mJ / m ² , polar component (γ _L ^p ) 1.3 mJ / m ²

  Moreover, the measurement of the contact angle of water and a methylene iodide in the bonding surface with the die-bonding film 3 of the adhesive layer 2 is the value obtained as follows. That is, according to JIS Z8703, about 1 μL of water (distilled water) or methylene iodide droplets are dropped on the surface of the pressure-sensitive adhesive layer 2 in an environment of a temperature of 23 ± 2 ° C. and a relative humidity of 50 ± 5% Rh. To do. Next, using a surface contact angle meter “CA-X” (manufactured by FACE), the contact angle was measured by a three-point method (using an average value) 30 seconds after dropping.

  In the pressure-sensitive adhesive layer 2, various additives (for example, a colorant, a thickener, a bulking agent, a filler, a tackifier, a plasticizer, an anti-aging agent, Antioxidants, surfactants, crosslinking agents, etc.) may be included.

(Manufacturing method of dicing die bond film)
Next, the manufacturing method of the dicing die-bonding film of the present invention will be described using the dicing die-bonding film 10 as an example. First, the base material 1 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, the pressure-sensitive adhesive composition is applied onto the substrate 1 and dried (heat-crosslinked as necessary) to form the pressure-sensitive adhesive layer 2. Examples of the coating method include roll coating, screen coating, and gravure coating. Moreover, application | coating may be performed directly on the base material 1, and you may transfer to the base material 1 after apply | coating to the release paper etc. which performed the peeling process on the surface.

  On the other hand, a forming material for forming the die bond film 3 is applied onto the release paper so as to have a predetermined thickness, and further dried under predetermined conditions to form an application layer. By transferring this coating layer onto the pressure-sensitive adhesive layer 2, the die bond film 3 is formed. Moreover, after apply | coating a forming material directly on the said adhesive layer 2, the die-bonding film 3 can also be formed by drying on predetermined conditions. As described above, the dicing die-bonding film 10 according to the present invention can be obtained.

(Method for manufacturing semiconductor device)
Next, a method for manufacturing a semiconductor device using the die bond film according to the present embodiment will be described. FIG. 3 is a schematic cross-sectional view showing an example in which a semiconductor element is mounted via a die bond film.

  In the method for manufacturing a semiconductor device according to the present embodiment, a semiconductor chip (semiconductor element) 5 is fixed on an adherend 6 via a wafer bonding portion 3a of a die bond film 3 (hereinafter referred to as a die bond film 3a). An adhering step for performing wire bonding, and a wire bonding step for performing wire bonding. Furthermore, it has a resin sealing step for sealing the semiconductor chip 5 with the sealing resin 8 and a post-curing step for after-curing the sealing resin 8.

  As shown in FIG. 1, the fixing step is a step of die-bonding the semiconductor chip 5 to the adherend 6 via the die-bonding film 3a. In this step, the die bond film 3a is thermally cured by performing heat treatment under a predetermined condition, and the semiconductor chip 5 is completely bonded onto the adherend 6. The temperature at which the heat treatment is performed is preferably 100 to 200 ° C, more preferably 120 to 180 ° C. The heat treatment time is preferably 0.25 to 10 hours, more preferably 0.5 to 8 hours. As a method for fixing the semiconductor chip 5 on the adherend 6, for example, after the die bond film 3 a is laminated on the adherend 6, the semiconductor chip 5 is placed on the die bond film 3 a so that the wire bond surface is on the upper side. A method of sequentially laminating and fixing them. Alternatively, the semiconductor chip 5 to which the die bond film 3a is fixed in advance may be fixed to the adherend 6 and laminated.

  The wire bonding step is a step of electrically connecting the tips of terminal portions (inner leads) of the adherend 6 and electrode pads (not shown) on the semiconductor chip 5 with bonding wires 7. As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire or the like is used. The temperature at the time of wire bonding is 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is several seconds to several minutes. The connection is performed by a combination of vibration energy by ultrasonic waves and pressure energy by pressurization while being heated so as to be within the temperature range.

  The resin sealing step is a step of sealing the semiconductor chip 5 with the sealing resin 8. This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step is performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. Although the heating temperature at the time of resin sealing is normally performed at 175 degreeC for 60 to 90 second, this invention is not limited to this, For example, it can cure at 165 to 185 degreeC for several minutes. Thereby, the sealing resin is cured. In the present invention, voids between the die bond film 3a and the adherend 6 can be eliminated after the sealing resin step even when heat treatment is performed to thermally cure the die bond film 3a in the die bond step. it can.

  In the post-curing step, the sealing resin 8 that is insufficiently cured in the sealing step is completely cured. Although the heating temperature in this process changes with kinds of sealing resin, it exists in the range of 165-185 degreeC, for example, and heating time is about 0.5 to 8 hours.

  The semiconductor package obtained as described above has high reliability that can withstand the test even when, for example, a moisture-resistant solder reflow test is performed. The moisture-resistant solder reflow test is performed by a conventionally known method.

  Further, as shown in FIG. 4, the dicing die-bonding film of the present invention can also be suitably used when a plurality of semiconductor chips are stacked and three-dimensionally mounted. FIG. 4 is a schematic cross-sectional view showing an example in which a semiconductor chip is three-dimensionally mounted through a die bond film. In the case of the three-dimensional mounting shown in FIG. 4, after fixing at least one die bond film 3a cut out to be the same size as the semiconductor chip on the adherend 6, first, the semiconductor chip 15 is interposed via the die bond film 3a. The wire bond surface is fixed so that it is on the upper side. Next, the die bond film 13 is fixed while avoiding the electrode pad portion of the semiconductor chip 5. Further, another semiconductor chip 15 is temporarily fixed on the die bond film 13 so that the wire bond surface is on the upper side.

  Next, a wire bonding process is performed. Thereby, each electrode pad in the semiconductor chip 5 and the other semiconductor chip 15 and the adherend 6 are electrically connected by the bonding wire 7.

  Subsequently, a sealing process for sealing the semiconductor chip 5 and the like with the sealing resin 8 is performed, and the sealing resin is cured. At the same time, the adherend 6 and the semiconductor chip 5 are fixed together by the die bond film 3a. Further, the semiconductor chip 5 and another semiconductor chip 15 are also fixed by the die bond film 13. In addition, you may perform a postcure process after a sealing process.

  Even in the case of three-dimensional mounting of semiconductor chips, since the heat treatment by heating the die bond films 3a and 13 is not performed, the manufacturing process can be simplified and the yield can be improved. In addition, since the adherend 6 is not warped, and the semiconductor chip 5 and other semiconductor chips 15 are not cracked, the semiconductor element can be made thinner.

  Moreover, as shown in FIG. 5, it is good also as three-dimensional mounting which laminated | stacked the spacer via the die-bonding film between the semiconductor chips. FIG. 5 is a schematic cross-sectional view showing an example in which two semiconductor chips are three-dimensionally mounted with a die bond film via a spacer.

  In the case of the three-dimensional mounting shown in FIG. 5, first, the die bond film 3a, the semiconductor chip 5 and the die bond film 21 are sequentially laminated on the adherend 6 and temporarily fixed. Further, the spacer 9, the die bond film 21, the die bond film 3 a and the semiconductor chip 5 are sequentially laminated and fixed on the die bond film 21.

  Next, as shown in FIG. 5, a wire bonding process is performed. Thereby, the electrode pad in the semiconductor chip 5 and the adherend 6 are electrically connected by the bonding wire 7.

  Subsequently, a sealing step of sealing the semiconductor chip 5 with the sealing resin 8 is performed, and the sealing resin 8 is cured. Thereby, a semiconductor package is obtained. The sealing process is preferably a batch sealing method in which only the semiconductor chip 5 side is sealed on one side. Sealing is performed to protect the semiconductor chip 5 attached on the pressure-sensitive adhesive sheet, and the typical method is molding in a mold using the sealing resin 8. In that case, it is common to perform a sealing process simultaneously using the metal mold | die which consists of an upper metal mold | die and a lower metal mold | die which have a some cavity. The heating temperature at the time of resin sealing is preferably in the range of 170 to 180 ° C, for example. A post-curing step may be performed after the sealing step.

  The spacer 9 is not particularly limited, and for example, a conventionally known silicon chip or polyimide film can be used. A core material can be used as the spacer. It does not specifically limit as a core material, A conventionally well-known thing can be used. Specifically, a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film, etc.), a resin substrate reinforced with glass fibers or plastic non-woven fibers, a mirror silicon wafer, a silicon substrate or A glass substrate or the like can be used.

  Next, the semiconductor package is surface-mounted on a printed wiring board. Examples of the surface mounting method include reflow soldering in which solder is supplied on a printed wiring board in advance and then heated and melted with warm air to perform soldering. Examples of the heating method include hot air reflow and infrared reflow. Moreover, any system of whole heating or local heating may be used. The heating temperature is preferably 240 to 265 ° C., and the heating time is preferably in the range of 1 to 20 seconds.

(Other matters)
When a semiconductor element is three-dimensionally mounted on the substrate or the like, a buffer coat film is formed on the surface side where the circuit of the semiconductor element is formed. Examples of the buffer coat film include those made of a heat resistant resin such as a silicon nitride film or a polyimide resin.

  Moreover, the die-bonding film used at each stage when the semiconductor element is three-dimensionally mounted is not limited to the one having the same composition, and can be appropriately changed according to the manufacturing conditions and applications.

  Further, in the above-described embodiment, the mode in which the wire bonding process is performed collectively after laminating a plurality of semiconductor elements on a substrate or the like has been described, but the present invention is not limited to this. For example, it is possible to perform a wire bonding process every time a semiconductor element is stacked on a substrate or the like.

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in the examples are not intended to limit the scope of the present invention only to them, but are merely illustrative examples, unless otherwise specified. The term “parts” means parts by weight.

Example 1
Epoxy resin (Nippon Kayaku Co., Ltd., trade name: EPPN501HY, melt viscosity 0.7 Pa · s) 50 parts, phenol resin (Maywa Kasei Co., Ltd., trade name: MEH 7800, melt viscosity 1.2 Pa · s) 50 parts, acrylic copolymer (manufactured by Nogawa Chemical Co., Ltd., trade name: Levital AR31, weight average molecular weight 700,000, glass transition point -15 ° C.) 100 parts, and spherical silica as a filler (manufactured by Admatechs Co., Ltd.) , Trade name: S0-25R, average particle size 0.5 μm) was dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6% by weight.

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thereby, a thermosetting die-bonding film having a thickness of 25 μm was produced.

(Example 2)
Epoxy resin (Nippon Kayaku Co., Ltd., trade name: EPPN501HY, melt viscosity 0.7 Pa · s) 120 parts, phenol resin (Maywa Kasei Co., Ltd., trade name: MEH 7800, melt viscosity 1.2 Pa · s) 120 parts, acrylic copolymer (manufactured by Nogawa Chemical Co., Ltd., trade name; Levital AR31, weight average molecular weight 700,000, glass transition point-15 ° C.) 100 parts, curing catalyst (made by Hokuko Chemical Co., Ltd., trade name; 0.5 parts of TPP-K and 70 parts of spherical silica (manufactured by Admatechs Co., Ltd., trade name: S0-25R, average particle size 0.5 μm) as filler are dissolved in methyl ethyl ketone to a concentration of 23.6% by weight. An adhesive composition solution was obtained.

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thereby, a thermosetting die-bonding film having a thickness of 25 μm was produced.

(Example 3)
Epoxy resin (Nippon Kayaku Co., Ltd., trade name: EPPN501HY, melt viscosity 0.7 Pa · s) 145 parts, phenol resin (Maywa Kasei Co., Ltd., trade name: MEH 7800, melt viscosity 1.2 Pa · s) 145 parts, acrylic copolymer (manufactured by Nogawa Chemical Co., Ltd., trade name; Levital AR31, weight average molecular weight 700,000, glass transition point-15 ° C.) 100 parts, curing catalyst (made by Hokuko Chemical Co., Ltd., trade name; 0.5 parts of TPP-K and 70 parts of spherical silica (manufactured by Admatechs Co., Ltd., trade name: S0-25R, average particle size 0.5 μm) as filler are dissolved in methyl ethyl ketone to a concentration of 23.6% by weight. An adhesive composition solution was obtained.

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thereby, a thermosetting die-bonding film having a thickness of 25 μm was produced.

(Comparative Example 1)
Epoxy resin (manufactured by JER Co., Ltd., trade name: Epicoat 1001, melt viscosity 1.5 Pa · s) 33 parts, phenol resin (Maywa Kasei Co., Ltd., trade name: MEH7851, melt viscosity 3.4 Pa · s) 33 Parts, acrylic copolymer (manufactured by Nogawa Chemical Co., Ltd., trade name: Levital AR31, weight average molecular weight 700,000, glass transition point -15 ° C.) 100 parts, and spherical silica as a filler (manufactured by Admatechs Co., Ltd., 58 parts (trade name: S0-25R, average particle size 0.5 μm) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6% by weight.

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thereby, a thermosetting die-bonding film having a thickness of 25 μm was produced.

(Comparative Example 2)
Epoxy resin (JER Co., Ltd., trade name: Epicoat 1001, melt viscosity 1.5 Pa · s) 13 parts, phenol resin (Maywa Kasei Co., Ltd., trade name: MEH7851, melt viscosity 3.4 Pa · s) 13 Parts, acrylic copolymer (manufactured by Nogawa Chemical Co., Ltd., trade name: Levital AR31, weight average molecular weight 700,000, glass transition point -15 ° C.) 100 parts, and spherical silica as a filler (manufactured by Admatechs Co., Ltd., 75 parts of trade name: S0-25R, average particle size 0.5 μm) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6% by weight.

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thereby, a thermosetting die-bonding film having a thickness of 25 μm was produced.

(Measurement method of weight average molecular weight)
The weight average molecular weight of the carboxyl group-containing acrylic copolymer is a value in terms of polystyrene by gel permeation chromatography. In gel permeation chromatography, four columns of TSK G2000H HR, G3000H HR, G4000H HR, and GMH-H HR (all manufactured by Tosoh Corporation) are connected in series, and tetrahydrofuran is used as the solution. Was used under the conditions of a flow rate of 1 ml / min, a temperature of 40 ° C., a sample concentration of 0.1 wt% tetrahydrofuran solution, and a sample injection amount of 500 μl, and a differential refractometer was used as the detector.

(Measurement of melt viscosity)
About each produced thermosetting type die-bonding film, the melt viscosity in 120-130 degreeC was measured, respectively. That is, the die bond film was laminated to a thickness of 2 mm. Next, it cuts out to φ8 mm, measures the melt viscosity at 50 to 150 ° C. at a temperature rising rate of 10 ° C./min and a frequency of 1 MHz using a solid viscoelasticity measuring device (ARES, manufactured by Rheometic Scientific), and 120 to The average value of melt viscosity at 130 ° C. was determined. The results are shown in Table 1 below.

  Moreover, about the melt viscosity in 120-130 degreeC of an epoxy resin and a phenol resin, these resin was used for the temperature rising rate of 10 degree-C / min, and the frequency of 1 MHz using the solid viscoelasticity measuring apparatus (RES made by Rheometic Scientific). The melt viscosity at 50 to 150 ° C. was measured, and the average value of the melt viscosity at 120 to 130 ° C. was determined.

(Confirmation of micro void generation)
Each of the produced thermosetting die-bonding films was attached to a 10 mm square and 75 μm thick semiconductor chip under the condition of a temperature of 40 ° C. Furthermore, the semiconductor chip was mounted on the BGA substrate via each die bond film. The mounting conditions were a temperature of 120 ° C., a pressure of 0.1 MPa, and 1 second.

  Next, the BGA substrate on which the semiconductor chip was mounted was heat-treated at 150 ° C. for 1 hour with a dryer, and then packaged with a sealing resin (trade name: GE-100, manufactured by Nitto Denko Corporation). The sealing conditions were a heating temperature of 175 ° C. and 180 seconds.

  Subsequently, the semiconductor device after sealing was cut with a glass cutter, and the peripheral portion of the semiconductor chip (a frame-like region having a width of 0.5 mm) was observed with an infrared microscope, and the number of microvoids was counted.

(Wet solder reflow resistance)
Each of the produced thermosetting die-bonding films was attached to a 10 mm square and 75 μm thick semiconductor chip under the condition of a temperature of 40 ° C. Furthermore, the semiconductor chip was mounted on the BGA substrate via each die bond film. The mounting conditions were a temperature of 120 ° C., a pressure of 0.1 MPa, and 1 second.

  Next, the BGA substrate on which the semiconductor chip was mounted was heat-treated at 150 ° C. for 1 hour with a dryer, and then packaged with a sealing resin (GE-100, manufactured by Nitto Denko Corporation). The sealing conditions were a heating temperature of 175 ° C. and 180 seconds.

  Thereafter, the BGA substrate mounted with the semiconductor chip was placed in an IR reflow furnace set so as to absorb moisture under conditions of 60 ° C., 80% Rh and 168 hours, and further hold at 260 ° C. or higher for 10 seconds. Then, the semiconductor device after sealing was cut with a glass cutter, and the cross section was observed with an ultrasonic microscope to confirm the presence or absence of peeling at the boundary between each thermosetting die bond film and the BGA substrate. The confirmation was performed on 20 semiconductor chips, and the case where one or less semiconductor chips were peeled off was marked with ◯, and the case where there were one or more semiconductor chips was marked with x. The results are shown in Table 1 below.

(Measurement of glass transition point (Tg))
The glass transition point of the acrylic copolymer used in each Example and Comparative Example was determined by using Tan (G) at a heating rate of 10 ° C./min and a frequency of 1 MHz using a viscoelasticity measuring device (ARES, manufactured by Rheometic Scientific). "(Loss elastic modulus) / G '(storage elastic modulus)).

(result)
As can be seen from the results in Table 1 below, as in Comparative Examples 1 and 2, the ratio (X / Y) of the total content of the epoxy resin and the phenol resin to the content of the acrylic copolymer is less than 0.7. It was confirmed that a large number of microvoids were generated at the peripheral edge of the semiconductor chip. Moreover, also about moisture reflow resistance, it was confirmed that peeling has arisen between the thermosetting die-bonding film and the BGA substrate.

  On the other hand, as in Examples 1 and 2, when X / Y was 0.7 or more, no microvoids were generated at the peripheral edge of the semiconductor chip. Moreover, it did not peel between the thermosetting die-bonding film after resin sealing and the BGA substrate, and it was confirmed that the moisture reflow resistance was excellent.

DESCRIPTION OF SYMBOLS 1 Base material 2 Adhesive layer 2a Part 2b Part 3, 3 ', 13, 21 Die bond film (thermosetting type die bond film)
3a Die bond film 5 Semiconductor chip 6 Substrate 7 Bonding wire 8 Sealing resin 9 Spacer 10, 11 Dicing die bond film 15 Semiconductor chip

Claims (5)

A thermosetting die-bonding film used for manufacturing a semiconductor device,
When the total weight of the epoxy resin and the phenol resin is X and the weight of the acrylic copolymer is Y, the ratio X / Y is 1 to 5 including at least an epoxy resin, a phenol resin, and an acrylic copolymer. Yes,
The melt viscosity at 120 to 130 ° C. is in the range of 500 to 3500 Pa · s,
The acrylic copolymer includes 10 to 60% by weight of butyl acrylate and 40 to 90% by weight of ethyl acrylate,
A thermosetting die-bonding film containing 70 / 3.9 parts by weight or more and 80 parts by weight or less of filler with respect to a total of 100 parts by weight of an epoxy resin, a phenol resin, and an acrylic copolymer.   The thermosetting die-bonding film according to claim 1, wherein the acrylic copolymer has a glass transition point in the range of -30 to 30 ° C.   The thermosetting die-bonding film according to claim 1 or 2, wherein the epoxy resin has a melt viscosity at 120 to 130 ° C in a range of 0.05 to 7 Pa · s.   The thermosetting die-bonding film according to claim 1, wherein the phenol resin has a melt viscosity at 120 to 130 ° C. within a range of 0.3 to 35 Pa · s. The dicing die-bonding film which is the structure where the thermosetting type die-bonding film of any one of Claims 1-4 was laminated | stacked on the dicing film.

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