JP6033734B2 - Film adhesive, dicing tape integrated film adhesive, and method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to a film adhesive, a dicing tape-integrated film adhesive, and a method for manufacturing a semiconductor device.

  In the manufacture of semiconductor devices, a method of bonding a semiconductor element to a metal lead frame or the like (so-called die bonding method) has been changed from a conventional gold-silicon eutectic method to a solder or resin paste method. At present, a method using a conductive resin paste is used.

  However, the method using a resin paste has a problem that the conductivity is reduced by voids, the thickness of the resin paste is non-uniform, and the pad is contaminated by the protrusion of the resin paste. In order to solve these problems, a film adhesive may be used instead of the resin paste (see, for example, Patent Document 1).

  In addition, in Patent Document 2, an acrylic acid copolymer having a glass transition temperature of −10 to 50 ° C. is blended in order to reduce thermal damage of a semiconductor element, a lead frame, and the like, and thus a film shape is imparted with flexibility. The adhesives are disclosed.

Japanese Patent Application Laid-Open No. 6-145639 Japanese Patent No. 4137827

  By the way, conventionally, an adhesive having heat resistance has been desired. In particular, a power semiconductor device that controls and supplies electric power generally has a large amount of heat generation, so that an adhesive used for the power semiconductor device is required to have high heat resistance.

  The inventors of the present invention have intensively studied film adhesives for semiconductor devices. As a result, when the glass transition temperature (Tg) after curing is higher than the predetermined temperature, it was found that the glass has excellent heat resistance, and the present invention has been completed.

That is, the film adhesive for a semiconductor device according to the present invention is
Including thermosetting resin, curing agent and conductive particles,
The glass transition temperature after thermosetting is 130 ° C. or higher.

  According to the said structure, since the glass transition temperature after thermosetting is 130 degreeC or more, it has heat resistance. Therefore, if it is used in a semiconductor device, it can withstand heat generation from a semiconductor element or the like. In addition, since the conductive particles are included, heat generated from the semiconductor element or the like can be efficiently discharged to the outside.

In the said structure, it is preferable that the electrical resistivity in 25 degreeC after hardening is 1 * 10 ^<-2 > (omega ^| ohm) * m or less. The lower the electrical resistivity is, the higher the electrical conductivity is, and the electrical conductivity is proportional to the thermal conductivity. Therefore, the electrical resistivity at 25 ° C. after curing is 1 × 10 ⁻² Ω · m or less. The thermal conductivity is relatively high. As a result, heat from the semiconductor element or the like can be efficiently radiated to the outside. In particular, when used in a small and high-density semiconductor device, heat can be suitably radiated to the outside.

  In the above configuration, the weight ratio (A) / (B) is 1 when the thermoplastic resin is included, the weight of the thermoplastic resin is A, and the total of the thermosetting resin and the curing agent is B. It is preferable to be within the range of / 9 to 4/6. When the weight ratio (A) / (B) is 4/6 or less, the curing component is sufficient, and it becomes easy to increase the glass transition temperature after thermosetting. On the other hand, when the weight ratio (A) / (B) is 1/9 or more, film formation becomes easy.

  The said structure WHEREIN: It is preferable that content of the said electroconductive particle is 30 to 95 weight% with respect to the whole film adhesive. When the content of the conductive particles is 30% by weight or more with respect to the entire film adhesive, the thermal conductivity is easily increased. As a result, heat from the semiconductor element or the like can be efficiently radiated from the outside. On the other hand, when the content of the conductive particles is 95% by weight or less based on the whole film adhesive, film formation is facilitated.

  The said structure WHEREIN: It is preferable that the tensile storage elastic modulus in 175 degreeC after thermosetting is 50-1500 Mpa. A semiconductor element etc. can be firmly adhere | attached on a to-be-adhered body in the storage elastic modulus in 175 degreeC after thermosetting being 50 Mpa or more. On the other hand, if the storage elastic modulus at 175 ° C. after thermosetting is 1500 MPa, it has a certain degree of flexibility, can withstand thermal stress, and can be prevented from peeling off the adherend. .

In the said structure, it is preferable that the shear adhesive force with copper at 150 degreeC after hold | maintaining at 0.5 MPa for 0.5 second at 150 degreeC is in the range of 5-200 g / 25mm < ² >. Since the shear adhesive force is 5 g / 25 mm ² or more, the semiconductor element can be sufficiently softened at 150 ° C. or lower when bonding the semiconductor element to the lead frame. As a result, it is possible to prevent the adherend such as the lead frame from being oxidized and achieve high adhesion to the adherend.

  In the above configuration, the thickness is preferably in the range of 5 to 100 μm. When the thickness is 5 μm or more, it is possible to prevent the occurrence of non-adhered portions even if chip warpage or the like occurs. On the other hand, when the thickness is 100 μm or less, it is possible to prevent the film adhesive from excessively protruding and contaminating the pad or the like due to the load during die bonding.

Moreover, the dicing tape-integrated film adhesive of the present invention is a dicing tape in which a pressure-sensitive adhesive layer is laminated on a base material in order to solve the above problems,
Having the film-like adhesive described above,
The film adhesive is formed on the pressure-sensitive adhesive layer.

  The said structure WHEREIN: The peeling force of the said film adhesive and the said dicing tape exists in the range of 0.01-3.00 N / 20mm on conditions of peeling speed: 300 mm / min, peeling temperature: 25 degreeC, and T peel. It is preferable that When the peeling force is 0.01 N / 20 mm or more, chip fly during dicing can be suppressed. Moreover, a pick-up can be made easy as the said peeling force is 3.00 N / 20mm or less.

Moreover, the manufacturing method of the semiconductor device of the present invention is a manufacturing method of a semiconductor device using the dicing tape-integrated film adhesive described above,
Step A for attaching a semiconductor wafer to the film adhesive of the dicing tape-integrated film adhesive;
Step B for dicing the semiconductor wafer together with the film adhesive;
Step C for picking up a semiconductor element with a film adhesive obtained by dicing,
After the semiconductor element with the film adhesive is brought into contact with the adherend, the film adhesive is held within a range of 0.05 to 40 MPa within a range of 50 to 150 ° C. for 0.01 to 2 seconds. Step D to be performed
After the step D, the method further comprises a step E of thermosetting the film adhesive.

  According to the said structure, after making the picked-up semiconductor element with a film adhesive contact an adherend, the said film adhesive is 0.05 to 2 seconds within the range of 50-150 degreeC, 0.05. Hold within a range of ˜40 MPa (step D). Therefore, when the semiconductor element is adhered to an adherend such as a lead frame, the film adhesive can be sufficiently softened and adhered at a temperature within the range of 50 to 150 ° C. Since the film adhesive is softened at a relatively low temperature of 150 ° C. or lower, the adherend (eg, lead frame) can be prevented from being oxidized. Then, the film adhesive is thermally cured (step E). Thus, a semiconductor device that can withstand heat generation can be obtained. Moreover, since the said film adhesive contains electroconductive particle, it becomes possible to discharge | release the heat_generation | fever from a semiconductor element etc. to the exterior efficiently.

According to the film-like adhesive and the dicing tape-integrated film-like adhesive of the present invention, when used in a semiconductor device, the film-like adhesive can withstand heat generation from a semiconductor element and the like, and heat generation from the semiconductor element and the like. It is possible to efficiently discharge to the outside.
Further, according to the method for manufacturing a semiconductor device of the present invention, it is possible to prevent the adherend from being oxidized and to obtain a semiconductor device that can withstand heat generation. Further, heat generated from the semiconductor element or the like can be efficiently released to the outside.

It is a cross-sectional schematic diagram of the dicing tape integrated film adhesive which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram of the dicing tape integrated film adhesive which concerns on other embodiment of this invention. It is a figure for demonstrating one manufacturing method of the semiconductor device of this invention.

[Dicing tape integrated film adhesive]
Hereinafter, the dicing tape-integrated film adhesive of the present invention will be described. FIG. 1 is a schematic cross-sectional view of a dicing tape-integrated film adhesive according to an embodiment of the present invention. FIG. 2 is a schematic sectional view of a dicing tape-integrated film adhesive according to another embodiment of the present invention.

  As shown in FIG. 1, the dicing tape-integrated film adhesive 10 has a configuration in which a film adhesive 3 is laminated on a dicing tape 11. The dicing tape 11 is configured by laminating the pressure-sensitive adhesive layer 2 on the substrate 1, and the film adhesive 3 is provided on the pressure-sensitive adhesive layer 2. Further, the present invention may be configured such that the film adhesive 3 ′ is formed only on a work (semiconductor wafer or the like) affixing portion, like the dicing tape-integrated film adhesive 12 shown in FIG. 2.

The film adhesive 3 includes a thermosetting resin, a curing agent, and conductive particles, and has a glass transition temperature of 130 ° C. or higher after thermosetting. The glass transition temperature after the thermosetting is preferably 140 ° C. or higher. Moreover, although the glass transition temperature after the said thermosetting is so preferable that it is high, it is 300 degrees C or less, for example. The film adhesive 3 has heat resistance because the glass transition temperature after thermosetting is 130 ° C. or higher. Therefore, if it is used in a semiconductor device, it can withstand heat generation from a semiconductor element or the like. In addition, since the conductive particles are included, heat generated from the semiconductor element or the like can be efficiently discharged to the outside. The glass transition temperature can be controlled by adjusting the blending ratio between the thermoplastic resin and the thermosetting resin or by adjusting the valence of the reactive functional group of the thermosetting resin such as epoxy resin. it can.
In addition, in this specification, the glass transition temperature after thermosetting means the glass transition temperature after heating at 140 degreeC for 1 hour, and also heating at 260 degreeC for 5 hours.

The film adhesive 3 preferably has an electric resistivity at 25 ° C. of 1 × 10 ⁻² Ω · m or less after thermosetting. The lower the electrical resistivity is, the higher the electrical conductivity is, and the electrical conductivity is proportional to the thermal conductivity. Therefore, the electrical resistivity at 25 ° C. after thermosetting is 1 × 10 ⁻² Ω · m or less. And the thermal conductivity is relatively high. As a result, heat from the semiconductor element or the like can be efficiently radiated to the outside. In particular, when used in a small and high-density semiconductor device, heat can be suitably radiated to the outside.
In this specification, the electrical resistivity at 25 ° C. after thermosetting means the electrical resistivity after heating at 140 ° C. for 1 hour and further heating at 260 ° C. for 5 hours.

Moreover, as for the film adhesive 3, it is preferable that the storage elastic modulus in 175 degreeC after thermosetting is 50-1500 Mpa, and it is more preferable that it is 75-1200 Mpa. A semiconductor element etc. can be firmly adhere | attached on a to-be-adhered body in the storage elastic modulus in 175 degreeC after thermosetting being 50 Mpa or more. On the other hand, if the storage elastic modulus at 175 ° C. after thermosetting is 1500 MPa, it has a certain degree of flexibility, can withstand thermal stress, and can be prevented from peeling off the adherend. .
In the present specification, the storage elastic modulus at 175 ° C. after thermosetting means the storage elastic modulus at 175 ° C. after heating at 140 ° C. for 1 hour and further heating at 260 ° C. for 5 hours.

The storage elastic modulus of the film adhesive 3 at 25 ° C. is preferably 5 MPa or more, and more preferably 2 × 10 ² MPa or more. When the pressure is less than 5 MPa, the adhesion with the dicing tape is increased, and the pickup property tends to be reduced. Storage modulus at 25 ° C. of the film-like adhesive 3 is preferably 5 × ¹⁰ 3 MPa or less, more preferably 3 × ¹⁰ 3 MPa or less, more preferably 2.5 × ¹⁰ 3 MPa or less. Exceeding 5 × 10 ³ MPa is difficult in terms of formulation.

  The surface roughness (Ra) of the film adhesive 3 is preferably 0.1 to 1000 nm. By setting the surface roughness to 1000 nm or less, the low-temperature sticking property can be improved. Moreover, the sticking property to the adherend at the time of die attachment can be improved. It is generally difficult to make the surface roughness 0.1 nm or more.

The film-like adhesive 3 preferably has higher thermal conductivity at a measurement temperature of 25 ° C. after thermosetting, and is, for example, 0.5 W / m · K or more. When the thermal conductivity is 0.5 W / m · K or more, the heat dissipation is good and it is possible to cope with small size and high density mounting.
In this specification, the thermal conductivity at a measurement temperature of 25 ° C. after thermosetting refers to the thermal conductivity at 25 ° C. after heating at 140 ° C. for 1 hour and further heating at 260 ° C. for 5 hours.

  The film adhesive 3 is preferably 0.2 N / 10 mm or more when the adhesive strength is measured at 25 ° C. after being attached to a wafer having a back metal film at 70 ° C. By setting the adhesion to be 0.2 N / 10 mm or more, chip fly during dicing can be suppressed. The back surface metal film refers to a film obtained by vapor-depositing or plating a metal on the back surface of the wafer. Since the back surface metal film usually has a surface free energy smaller than that of a silicon wafer, the film adhesive 3 is difficult to stick. That is, by making the adhesion strength 0.2 N / 10 mm or more, chip jumping at the time of dicing is suppressed even in the manufacture of a semiconductor device using a wafer having a back surface metal film that is difficult to adhere the film adhesive 3. The yield can be improved. The measurement of the adhesion force is a value measured under conditions of a peeling angle of 180 degrees, a peeling temperature of 25 ° C., and a peeling speed of 300 mm / min.

It is preferable that the film adhesive 3 has a shear adhesive force with copper at 150 ° C. after being held at 0.5 MPa for 0.5 seconds at 150 ° C. within a range of 5 to 200 g / 25 mm ² . Since the shear adhesive force is 5 g / 25 mm ² or more, the semiconductor element can be sufficiently softened at 150 ° C. or lower when bonding the semiconductor element to the lead frame. As a result, it is possible to prevent the adherend such as the lead frame from being oxidized and achieve high adhesion to the adherend. The method for measuring the shear adhesive force is according to the method described in the examples.

  The film adhesive 3 preferably contains a thermoplastic resin. As thermoplastic resins, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplasticity Examples thereof include polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.

  The acrylic resin is not particularly limited, and includes one or more esters of acrylic acid or methacrylic acid ester having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. And a polymer (acrylic copolymer). Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, and dodecyl group.

  In addition, the other monomer forming the polymer (acrylic copolymer) is not particularly limited, and for example, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid Or a carboxyl group-containing monomer such as crotonic acid, an acid anhydride monomer such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, (meth ) 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4 -Hydroxymethylcyclo Hydroxyl group-containing monomers such as (xyl) -methyl acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate Alternatively, a sulfonic acid group-containing monomer such as (meth) acryloyloxynaphthalene sulfonic acid or the like, or a phosphoric acid group-containing monomer such as 2-hydroxyethylacryloyl phosphate may be used.

  Among the acrylic resins, those having a weight average molecular weight of 100,000 or more are preferable, those having 300,000 to 3,000,000 are more preferable, and those having 500,000 to 2,000,000 are more preferable. It is because it is excellent in adhesiveness and heat resistance in the said numerical range. The weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene.

  The glass transition temperature of the thermoplastic resin is preferably −40 ° C. or higher, more preferably −35 ° C. or higher, and further preferably −25 ° C. or higher. Picking up can be facilitated by setting the glass transition temperature of the thermoplastic resin to −40 ° C. or higher. The glass transition temperature of the thermoplastic resin is preferably −10 ° C. or lower, more preferably −11 ° C. or lower. By setting the glass transition temperature of the thermoplastic resin to −10 ° C. or lower, it becomes easy to attach the film adhesive 3 to the semiconductor wafer at a low temperature of about 40 ° C. In this specification, the glass transition temperature of a thermoplastic resin means the theoretical value calculated | required by the Fox formula.

  The film adhesive 3 contains a thermosetting resin as described above.

  Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. In particular, an epoxy resin containing a small amount of ionic impurities that corrode semiconductor elements is preferable. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin is preferable.

  The epoxy resin is not particularly limited. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac. Type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., bifunctional epoxy resin or polyfunctional epoxy resin, or hydantoin type, trisglycidyl isocyanurate type or glycidylamine type epoxy resin is used . Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance.

  The phenol resin acts as a curing agent for an epoxy resin. For example, a novolac type phenol resin such as a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a tert-butylphenol novolak resin, a nonylphenol novolak resin, or a resol type phenol. Examples thereof include resins and polyoxystyrenes such as polyparaoxystyrene. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The blending ratio of the epoxy resin and the phenol resin is preferably blended so that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured product are likely to deteriorate.

  The film adhesive 3 preferably contains a thermosetting resin that is solid at 25 ° C. and a thermosetting resin that is liquid at 25 ° C. Thereby, favorable low-temperature sticking property is obtained. In this specification, the liquid state at 25 ° C. means that the viscosity at 25 ° C. is less than 5000 Pa · s. On the other hand, a solid at 25 ° C. means that the viscosity at 25 ° C. is 5000 Pa · s or more. The viscosity can be measured using a model number HAAKE Roto VISCO1 manufactured by Thermo Scientific.

  In the film adhesive 3, (weight of thermosetting resin solid at 25 ° C.) / (Weight of thermosetting resin liquid at 25 ° C.) is preferably 49/51 to 10/90, 45 It is more preferable that it is / 55-40 / 60. By setting (weight of thermosetting resin solid at 25 ° C.) / (Weight of thermosetting resin liquid at 25 ° C.) to 49/51 or less, the film-like adhesive 3 is formed at a low temperature of about 40 ° C. It becomes easy to stick to the wafer, and the low-temperature sticking property can be improved. On the other hand, by setting (weight of thermosetting resin solid at 25 ° C.) / (Weight of thermosetting resin liquid at 25 ° C.) to 10/90 or less, the adhesiveness of the film adhesive 3 is increased. It can suppress that it is too much and can make pick-up property favorable.

  The total content of the thermoplastic resin and the curable resin in the film adhesive 3 is preferably 5% by weight or more, more preferably 10% by weight or more based on the entire film adhesive 3. When it is 5% by weight or more, it is easy to maintain the shape as a film. Further, the total content of the thermoplastic resin and the curable resin is preferably 70% by weight or less, more preferably 60% by weight or less, based on the entire film adhesive 3. When the content is 70% by weight or less, the conductive particles suitably exhibit conductivity.

  In the film adhesive 3, when the weight of the thermoplastic resin is A and the total weight of the thermosetting resin and the curing agent is B, the weight ratio (A) / (B) is 1/9 to It is preferable to be within the range of 4/6. When the weight ratio (A) / (B) is 4/6 or less, the curing component is sufficient, and it becomes easy to increase the glass transition temperature after thermosetting. On the other hand, when the weight ratio (A) / (B) is 1/9 or more, film formation becomes easy.

  The film adhesive 3 includes conductive particles. The conductive particles are not particularly limited, and nickel particles, copper particles, silver particles, gold particles, aluminum particles, carbon black particles, carbon nanotubes that are fibrous particles, and particles in which the surfaces of core particles are coated with a conductive material. Etc.

  The core particles may be either conductive or non-conductive, and for example, glass particles can be used. As the conductive material for covering the surface of the core particles, metals such as nickel, copper, silver, gold, and aluminum can be used.

  The shape of the conductive particles is not particularly limited, and for example, flakes, needles, filaments, spheres, scales, and the like can be used. Among these, flakes are preferable in terms of improving dispersibility and filling rate.

  The average particle diameter of the conductive particles is not particularly limited, but is preferably 0.001 times or more (thickness of the film adhesive 3 × 0.001 or more) with respect to the thickness of the film adhesive 3, and 0.1 More than double is more preferable. By making it 0.001 times or more, it is easy to increase the thermal conductivity. As a result, heat from the semiconductor element or the like can be efficiently radiated from the outside. Further, the average particle diameter of the conductive particles is preferably 1 times or less (the thickness of the film adhesive 3 or less), more preferably 0.8 times or less the thickness of the film adhesive 3. By making it 1 times or less, chip cracking can be suppressed. The average particle diameter of the conductive particles is a value obtained by a laser diffraction particle size distribution meter (manufactured by HORIBA, apparatus name: LA-910).

  The specific gravity of the conductive particles is preferably 0.7 or more, and more preferably 1 or more. By setting it as 0.7 or more, it can suppress that electroconductive particle floats at the time of preparation of adhesive composition solution (varnish), and dispersion | distribution of electroconductive particle becomes non-uniform | heterogenous. The specific gravity of the conductive particles is preferably 22 or less, and more preferably 21 or less. By setting the specific gravity to 22 or less, it is possible to prevent the conductive particles from sinking and the conductive particles from being non-uniformly dispersed.

  The content of the conductive particles in the film adhesive 3 is preferably 30% by weight or more, more preferably 40% by weight or more with respect to the entire film adhesive 3. Further, the content before the conductive particles is preferably 95% by weight or less, more preferably 94% by weight or less. By making the content of the conductive particles 30% by weight or more, it is easy to increase the thermal conductivity. As a result, heat from the semiconductor element or the like can be efficiently radiated from the outside. On the other hand, when the content of the conductive particles is 95% by weight or less, film formation is facilitated.

  In addition to the above components, the film adhesive 3 may appropriately contain a compounding agent generally used for film production, for example, a crosslinking agent.

  The film adhesive 3 can be manufactured by a normal method. For example, an adhesive composition solution containing each of the above components is prepared, and the adhesive composition solution is applied on a base separator so as to have a predetermined thickness to form a coating film, and then the coating film is dried. Thereby, the film adhesive 3 can be manufactured.

  The solvent used in the adhesive composition solution is not particularly limited, but an organic solvent that can uniformly dissolve, knead, or disperse the components is preferable. Examples thereof include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone, toluene, xylene, and the like.

  As the base material separator, polyethylene terephthalate (PET), polyethylene, polypropylene, plastic film or paper surface-coated with a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate release agent can be used. Examples of the method for applying the adhesive composition solution include roll coating, screen coating, and gravure coating. Moreover, the drying conditions of a coating film are not specifically limited, For example, it can carry out in drying temperature 70-160 degreeC and drying time 1-5 minutes.

  The thickness of the film adhesive 3 is preferably 5 μm or more, and more preferably 15 μm or more. The thickness of the film adhesive 3 is preferably 100 μm or less, and more preferably 50 μm or less. When the thickness of the film adhesive 3 is 5 μm or more, it is possible to prevent occurrence of a non-adhered portion even if chip warpage or the like occurs. On the other hand, when the thickness of the film-like adhesive 3 is 100 μm or less, it is possible to suppress the film-like adhesive 3 from excessively protruding and contaminating the pad or the like due to a load during die bonding.

  The film adhesive 3 can be suitably used for manufacturing a semiconductor device. Especially, it can use especially suitably as a die attach film which adhere | attaches adherends, such as a lead frame, and a semiconductor chip (die attach). Examples of the adherend include a lead frame, an interposer, and a semiconductor chip. Of these, a lead frame is preferable.

  The film adhesive 3 is preferably integrated with a dicing tape and provided as a dicing tape integrated film adhesive as in this embodiment. However, the film adhesive of the present invention may be provided as a single film adhesive without being attached to the dicing tape. In this case, a film-like adhesive can be made into the structure similar to a dicing tape integrated film-like adhesive by affixing on a dicing tape.

  The substrate 1 serves as a strength matrix of the dicing tape-integrated film adhesives 10 and 12, and preferably has ultraviolet transparency. Examples of the substrate 1 include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, and the like. Polyolefin, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene -Hexene copolymers, polyesters such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide Polyphenyl sulphates id, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), and paper.

  The surface of the substrate 1 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to enhance adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed.

  The thickness of the substrate 1 is not particularly limited and can be appropriately determined, but is generally about 5 to 200 μm.

  It does not restrict | limit especially as an adhesive used for formation of the adhesive layer 2, For example, common pressure sensitive adhesives, such as an acrylic adhesive and a rubber adhesive, can be used. As pressure-sensitive adhesives, acrylic adhesives based on acrylic polymers are used as the base polymer from the standpoint of cleanability of electronic components that are difficult to contaminate such as semiconductor wafers and glass with organic solvents such as ultrapure water and alcohol. preferable.

  Examples of the acrylic polymer include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl ester, eicosyl ester, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon atoms, such as linear or branched alkyl esters) Beauty (meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, cyclohexyl ester, etc.), etc. One or acrylic polymer using two or more of the monomer component thereof. In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

  The acrylic polymer includes units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, as necessary, for the purpose of modifying cohesive strength, heat resistance, and the like. You may go out. Examples of such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Sti Contains sulfonic acid groups such as sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalene sulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less of the total monomer components.

  Furthermore, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

  The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be carried out by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, it is preferable that the content of the low molecular weight substance is small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.

  In addition, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive. Generally, it is preferable to add about 5 parts by weight or less, and further 0.1 to 5 parts by weight with respect to 100 parts by weight of the base polymer. Furthermore, additives such as various conventionally known tackifiers and anti-aging agents may be used for the pressure-sensitive adhesive, if necessary, in addition to the above components.

  The pressure-sensitive adhesive layer 2 can be formed of a radiation curable pressure-sensitive adhesive. The radiation curable pressure-sensitive adhesive can easily reduce its adhesive strength by increasing the degree of crosslinking by irradiation with radiation such as ultraviolet rays.

  By irradiating only the part 2a corresponding to the work pasting part of the pressure-sensitive adhesive layer 2 shown in FIG. 1, a difference in adhesive force with the other part 2b can be provided. In this case, the said part 2b currently formed with the uncured radiation-curing-type adhesive can adhere to the film adhesive 3, and can ensure the retention strength at the time of dicing.

  Further, by curing the radiation curable pressure-sensitive adhesive layer 2 in accordance with the film adhesive 3 ′ shown in FIG. 2, the portion 2 a having a significantly reduced adhesive force can be formed. In this case, the wafer ring can be fixed to the portion 2b formed of the uncured radiation curable adhesive.

  That is, when the pressure-sensitive adhesive layer 2 is formed of a radiation curable pressure-sensitive adhesive, the portion 2a is irradiated with radiation so that the pressure-sensitive adhesive force of the portion 2a in the pressure-sensitive adhesive layer 2 <the pressure-sensitive adhesive strength of the other portion 2b. It is preferable.

  As the radiation curable pressure-sensitive adhesive, those having a radiation curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. Examples of the radiation curable pressure-sensitive adhesive include an addition-type radiation curable pressure-sensitive adhesive in which a radiation-curable monomer component or oligomer component is blended with a general pressure-sensitive pressure-sensitive adhesive such as the acrylic pressure-sensitive adhesive or rubber-based pressure-sensitive adhesive. An agent can be illustrated.

  Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation curable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a molecular weight in the range of about 100 to 30000 are suitable. The compounding amount of the radiation-curable monomer component or oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the adhesive strength of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of a base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  In addition to the additive-type radiation curable adhesive described above, the radiation curable pressure-sensitive adhesive has a carbon-carbon double bond in the polymer side chain or main chain or at the main chain terminal as a base polymer. Intrinsic radiation curable pressure sensitive adhesives using Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain many, so the oligomer components do not move through the adhesive over time and are stable. It is preferable because an adhesive layer having a layered structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, those having an acrylic polymer as a basic skeleton are preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted. However, the carbon-carbon double bond can be easily introduced into the polymer side chain for easy molecular design. . For example, after a monomer having a functional group is previously copolymerized with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. Moreover, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the preferable combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

  As the intrinsic radiation curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer does not deteriorate the characteristics. Components and oligomer components can also be blended. The radiation-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  The radiation curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfo Aromatic sulfonyl chloride compounds such as luchloride; Photoactive oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

  Examples of the radiation curable pressure-sensitive adhesive include photopolymerizability such as an addition polymerizable compound having two or more unsaturated bonds and an alkoxysilane having an epoxy group disclosed in JP-A-60-196956. Examples thereof include rubber adhesives and acrylic adhesives containing a compound and a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, or an onium salt compound.

  The radiation curable pressure-sensitive adhesive layer 2 can contain a compound that is colored by irradiation with radiation, if necessary. By including a compound to be colored in the pressure-sensitive adhesive layer 2 by irradiation with radiation, only the irradiated portion can be colored. The compound that is colored by irradiation with radiation is a colorless or light color compound before irradiation with radiation, but becomes a color by irradiation with radiation, and examples thereof include leuco dyes. The use ratio of the compound colored by radiation irradiation can be set as appropriate.

  The thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, but is preferably about 1 to 50 μm from the viewpoint of preventing chipping of the chip cut surface and compatibility of fixing and holding the adhesive layer. Preferably it is 2-30 micrometers, Furthermore, 5-25 micrometers is preferable.

  The film adhesives 3, 3 'of the dicing tape-integrated film adhesives 10, 12 are preferably protected by a separator (not shown). The separator has a function as a protective material that protects the film adhesives 3, 3 'until they are put to practical use. The separator is peeled off when a workpiece is stuck on the film adhesives 3, 3 'of the dicing tape-integrated film adhesive. As the separator, it is also possible to use polyethylene terephthalate (PET), polyethylene, polypropylene, a plastic film or paper whose surface is coated with a release agent such as a fluorine release agent or a long-chain alkyl acrylate release agent.

The dicing tape-integrated film adhesives 10 and 12 can be manufactured by a usual method. For example, the dicing tape integrated film adhesives 10 and 12 can be manufactured by bonding the pressure-sensitive adhesive layer 2 of the dicing tape 11 and the film adhesives 3 and 3 ′.

  In the dicing tape integrated film adhesives 10 and 12, the peeling force between the film adhesives 3 and 3 ′ and the dicing tape 11 is as follows: peeling speed: 300 mm / min, peeling temperature: 25 ° C., T peel It is preferably within a range of 0.01 to 3.00 N / 20 mm, and more preferably within a range of 0.02 to 2.00 N / 20 mm. When the peeling force is 0.01 N / 20 mm or more, chip fly during dicing can be suppressed. Moreover, a pick-up can be made easy as the said peeling force is 3.00 N / 20mm or less.

[Method for Manufacturing Semiconductor Device]
The manufacturing method of the semiconductor device according to this embodiment is as follows:
Step A for attaching a semiconductor wafer to the film adhesive of the dicing tape-integrated film adhesive;
Step B for dicing the semiconductor wafer together with the film adhesive;
Step C for picking up a semiconductor element with a film adhesive obtained by dicing,
After the semiconductor element with the film adhesive is brought into contact with the adherend, the film adhesive is held within a range of 0.05 to 40 MPa within a range of 50 to 150 ° C. for 0.01 to 2 seconds. Step D to be performed
After the step D, at least a step E of thermosetting the film adhesive is provided.

  Hereinafter, a method for manufacturing a semiconductor device according to the present embodiment will be described with reference to FIG. 3 by taking as an example a case where a semiconductor device is manufactured using the dicing tape-integrated film adhesive 10. FIG. 3 is a diagram for explaining a method of manufacturing a semiconductor device according to the present invention.

  First, the semiconductor wafer 4 is pressure-bonded onto the semiconductor wafer bonding portion 3a of the film adhesive 3 in the dicing tape-integrated film adhesive 10, and this is bonded and held (fixing step, step A). This step is performed while pressing with a pressing means such as a pressure roll. At this time, it can be crimped at a low temperature of about 40 ° C. Specifically, the pressure bonding temperature (sticking temperature) is preferably 35 ° C. or higher, and more preferably 37 ° C. or higher. The upper limit of the pressure bonding temperature is preferably lower, preferably 50 ° C. or lower, more preferably 45 ° C. or lower, more preferably 43 ° C. or lower. Since it can be attached to the semiconductor wafer 4 at a low temperature of about 40 ° C., the thermal influence on the semiconductor wafer 4 can be prevented, and the warpage of the semiconductor wafer 4 can be suppressed.

The pressure during the pressure bonding is preferably 1 × 10 ⁵ to 1 × 10 ⁷ Pa, and more preferably 2 × 10 ⁵ to 8 × 10 ⁶ Pa. In addition, the pressure bonding time is preferably 1 second to 5 minutes, and more preferably 1 minute to 3 minutes.

  Next, the semiconductor wafer 4 is diced together with the film adhesive 3 (step B). Thereby, the semiconductor wafer 4 is cut into a predetermined size and separated into individual pieces, and the semiconductor chip 5 is manufactured. Dicing is performed according to a conventional method, for example, from the circuit surface side of the semiconductor wafer 4. Further, in this step, for example, a cutting method called full cut in which cutting is performed up to the dicing tape-integrated film adhesive 10 can be employed. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. In addition, since the semiconductor wafer 4 is bonded and fixed by the dicing tape-integrated film adhesive 10, chip chipping and chip jumping can be suppressed, and damage to the semiconductor wafer 4 can be suppressed.

  Next, the semiconductor chip 5 is picked up in order to peel off the semiconductor chip 5 bonded and fixed to the dicing tape-integrated film adhesive 10 (step C). The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up the individual semiconductor chips 5 from the dicing tape-integrated film adhesive 10 side with a needle and picking up the pushed-up semiconductor chips 5 with a pickup device may be mentioned.

  Here, when the pressure-sensitive adhesive layer 2 is an ultraviolet curable type, the pickup is performed after the pressure-sensitive adhesive layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force with respect to the film adhesive 3 of the adhesive layer 2 falls, and peeling of the semiconductor chip 5 with the film adhesive 3 becomes easy. As a result, the pickup can be performed without damaging the semiconductor chip 5. Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary.

  The picked-up semiconductor chip 5 is bonded and fixed to the adherend 6 via the film adhesive 3 (die attach, process D). Under the present circumstances, after making the semiconductor element 5 with a film adhesive contact the to-be-adhered body 6, the film adhesive 3 is 0 in the range of 50-150 degreeC (preferably in the range of 80-140 degreeC). The pressure is maintained within the range of 0.01 to 2 seconds (preferably 0.02 to 1.5 minutes) and 0.05 to 40 MPa (preferably 0.1 to 30 MPa). Thereby, the film adhesive 3 can fully be softened and can be stuck. Since the film adhesive 3 is softened at a relatively low temperature of 150 ° C. or lower, oxidation of the adherend 6 can be prevented.

  Subsequently, the film adhesive 3 is thermally cured (step E). Thereby, the semiconductor chip 5 and the adherend 6 are bonded. The heating temperature at the time of thermosetting is preferably 100 ° C. or higher, more preferably 120 ° C. or higher. The heating temperature at the time of thermosetting is preferably 350 ° C. or lower, more preferably 300 ° C. or lower. When the heating temperature is in the above range, it can be bonded well.

  Next, a wire bonding step of electrically connecting the tip of the terminal portion (inner lead) of the adherend 6 and an electrode pad (not shown) on the semiconductor chip 5 with the bonding wire 7 is performed. As the bonding wire 7, for example, a gold wire, an aluminum wire or a copper wire is used. The temperature during wire bonding is preferably 80 ° C. or higher, more preferably 120 ° C. or higher, and the temperature is preferably 250 ° C. or lower, more preferably 175 ° C. or lower. The heating time is several seconds to several minutes (for example, 1 second to 1 minute). The connection is performed by a combination of vibration energy by ultrasonic waves and pressure energy by pressurization while being heated so as to be within the temperature range.

  Subsequently, a sealing step for sealing the semiconductor chip 5 with the sealing resin 8 is performed. This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step is performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is preferably 165 ° C. or higher, more preferably 170 ° C. or higher, and the heating temperature is preferably 185 ° C. or lower, more preferably 180 ° C. or lower.

  If necessary, the sealed material may be further heated (post-curing step). Thereby, the sealing resin 8 which is insufficiently cured in the sealing process can be completely cured. The heating temperature can be set as appropriate.

EXAMPLES Hereinafter, although this invention is demonstrated in detail using an Example, this invention is not limited to a following example, unless the summary is exceeded. In each example, all parts are based on weight unless otherwise specified.

The components used in the examples will be described.
Teisan resin SG-70L (acrylic copolymer, Mw: 900,000, glass transition temperature: −13 ° C.): Nagase ChemteX Corp. EOCN-1020-4 (epoxy resin solid at 25 ° C.): Nippon Kayaku HP-4700 (epoxy resin that is solid at 25 ° C.) manufactured by: DIC HP-4032D (epoxy resin that is liquid at 25 ° C.): JER828 (epoxy resin that is liquid at 25 ° C.): Mitsubishi Chemical ( MEH-8000H (phenol resin as a curing agent) manufactured by Meiwa Kasei Co., Ltd. 1400YP (conductive particles, copper powder, average particle size: 7 μm): SPH02J (conductive particles, silver manufactured by Mitsui Mining & Smelting Co., Ltd.) Powder, average particle diameter: 1 μm): manufactured by Mitsui Kinzoku Mining Co., Ltd. TPP-K (curing accelerator): manufactured by Hokuko Chemical

Examples and Comparative Examples According to the blending ratio shown in Table 1, the components and the solvent (methyl ethyl ketone) shown in Table 1 were put into a stirring vessel of a hybrid mixer (Keyence HM-500), and stirred in a stirring mode for 3 minutes.・ Mixed. After apply | coating the obtained varnish to a mold release process film (MRA50 by Mitsubishi Resin Co., Ltd.), it was made to dry and produced the film adhesive. Table 1 shows the thickness of each film adhesive. Table 1 shows the weight ratio (A) / (B) when the weight of the thermoplastic resin is A, the total weight of the thermosetting resin and the curing agent is B, and the entire film adhesive. The content (% by weight) of the conductive particles with respect to is also shown.

  The obtained film adhesive was cut into a circle having a diameter of 230 mm and pasted on a pressure-sensitive adhesive layer of a dicing tape (P2130G manufactured by Nitto Denko Corporation) at 25 ° C. to produce a dicing tape integrated film adhesive. did.

  Using a back grinder (DFG-8560 manufactured by DISCO Corporation), a silicon wafer (manufactured by Shin-Etsu Chemical Co., Ltd., thickness 0.6 mm) was ground to a thickness of 0.2 mm. Next, Ti (titanium) was deposited on the ground surface to a thickness of 200 nm. Next, Ni (nickel) was deposited on the Ti layer to a thickness of 200 nm. Next, Ag (silver) was deposited on the Ni layer so as to have a thickness of 300 nm. Thus, a wafer with a back metal film was produced.

The following evaluation was performed using the obtained film adhesive, dicing tape-integrated film adhesive, and wafer with a back metal film. The results are shown in Table 2.

[Measurement of glass transition temperature after thermosetting and measurement of storage elastic modulus at 175 ° C. after thermosetting]
The film adhesive was laminated until the thickness became 500 μm. Then, it heated at 140 degreeC for 1 hour, and also heat-cured by heating at 260 degreeC for 5 hours. Next, it is cut into a strip shape having a length of 22.5 mm (measurement length) and a width of 10 mm with a cutter knife, and using a solid viscoelasticity measuring device (RSAII, manufactured by Rheometric Scientific Co., Ltd.), −50 to The storage elastic modulus at 300 ° C. was measured. The measurement conditions were a frequency of 1 Hz and a heating rate of 10 ° C./min. The value at 175 ° C. at that time was taken as the measured value of the storage elastic modulus at 175 ° C. after thermosetting. Furthermore, the glass transition temperature was obtained by calculating the value of tan δ (E ″ (loss elastic modulus) / E ′ (storage elastic modulus)).

[Measurement of electrical resistivity at 25 ° C. after thermosetting]
The film adhesives of Examples and Comparative Examples were heated at 140 ° C. for 1 hour, and further heated at 260 ° C. for 5 hours to be thermally cured. Next, it measured by the 4-terminal method using the circuit element measuring device (Hioki Electric Co., Ltd., milliohm Hitester AC3560). The results are shown in Table 2.

[Measurement of peel strength between film adhesive and dicing tape]
A polyester adhesive tape (BT-315 manufactured by Nitto Denko Corporation) was bonded to the film adhesive of the dicing tape-integrated film adhesive for holding purposes, and then cut at a width of 100 mm × 100 mm to obtain a sample. Produced. About this sample, the film adhesive was peeled from the dicing tape at a peeling speed of 300 mm / min and a peeling temperature of 25 ° C. with a T peel, and the peeling force was measured. The results are shown in Table 2.

[Measurement of shear adhesive strength with copper]
The film adhesives of Examples and Comparative Examples were bonded to silicon having a thickness of 500 μm and 5 mm × 5 mm at 60 ° C. to produce a shear adhesive force measuring chip. The adhesive surface of this measuring chip was bonded to a copper plate while holding 0.5 MPa at 150 ° C. for 0.5 seconds. As the copper plate, a copper plate (JIS standard C1020) having a thickness of 200 μm was used. This sample for measurement was measured for shear adhesive force between the film adhesive and copper using a shear tester (Dage 4000, manufactured by Dage). The conditions for the shear test were a measurement speed of 500 μm / s, a measurement gap of 100 μm, and a stage temperature of 150 ° C. The case where the shear adhesive strength was within the range of 5 to 200 g / 25 mm ² was evaluated as “◯”, and the case outside the range of 5 to 200 g / 25 mm ² was evaluated as “X”. The results are shown in Table 2 together with the measured values.

[Heat resistance evaluation]
The metal film of the wafer with the back surface metal film prepared above was bonded to the film adhesive surface of the dicing tape integrated film adhesive prepared above. The bonding was performed using a wafer mounter (manufactured by Nitto Seiki) MA-3000III at a bonding speed of 10 mm / min and a bonding temperature of 70 ° C. Next, dicing was performed with a dicing machine to obtain a chip with a 5 × 5 mm film adhesive. Then, it was die-attached to a copper lead frame (Dai Nippon Printing Co., Ltd., product name: QFN32, 64) with a die bonder. The die attach conditions were as follows: temperature: 150 ° C., holding time: 0.5 seconds, pressure: 0.5 MPa. Then, after hold | maintaining at 140 degreeC for 1 hour, it heated at 260 degreeC for 5 hours, and the film adhesive was thermosetted. After that, it was sealed with a sealing resin (manufactured by Hitachi Chemical Co., Ltd., GE7470) and heated at 175 ° C. for 5 hours to cure the sealing resin, and then cut into 8 × 8 mm to obtain a package. .
Ten packages manufactured as described above were subjected to a heat cycle test of 1000 cycles at a temperature of −55 to 125 ° C. The test was performed in accordance with JEDEC Standard 22-A104C Condition B.
The package was observed with an ultrasonic microscope after the thermal cycle, and a case where even one chip was confirmed to be peeled was evaluated as x. The results are shown in Table 2.

DESCRIPTION OF SYMBOLS 1 Base material 2 Adhesive layer 3, 3 'Film adhesive 4 Semiconductor wafer 5 Semiconductor chip 6 To-be-adhered body 7 Bonding wire 8 Sealing resin 10, 12 Dicing tape integrated film adhesive 11 Dicing tape

Claims (10)

Including thermosetting resin, curing agent and conductive particles,
The glass transition temperature after thermosetting is 130 ° C. or higher,
Electrical resistivity at 25 ° C. after thermal curing, off Irumu like adhesive you equal to or less than 1 × 10 ^-2 Ω · m. Including thermosetting resin, curing agent and conductive particles,
The glass transition temperature after thermosetting is 130 ° C. or higher,
0.5 seconds at 0.99 ° C., a shear adhesion to copper at 0.99 ° C. after holding at 0.5MPa is full Irumu like adhesive you being in the range of 5 to 200 g / 25 mm ² . The electrical resistivity at 25 ° C. after thermosetting is 1 × 10 ^-2 The film adhesive according to claim 2, wherein the film adhesive is Ω · m or less. Including thermoplastics,
When the weight of the thermoplastic resin is A and the total weight of the thermosetting resin and the curing agent is B, the weight ratio (A) / (B) is within the range of 1/9 to 4/6. It exists, The film adhesive of any one of Claims 1-3 characterized by the above-mentioned. The content of the conductive particles, for the entire film adhesive film adhesive according to any one of claims 1-4, characterized in that 30 to 95% by weight. The film adhesive according to any one of claims 1 to 5 , wherein the tensile storage elastic modulus at 175 ° C after thermosetting is 50 to 1500 MPa.   Thickness exists in the range of 5-100 micrometers, The film adhesive of any one of Claims 1-6 characterized by the above-mentioned. A dicing tape in which an adhesive layer is laminated on a substrate;
It has a film adhesive according to any one of claims 1 to 7,
A dicing tape-integrated film adhesive, wherein the film adhesive is formed on the pressure-sensitive adhesive layer.   The peeling force between the film adhesive and the dicing tape is within the range of 0.01 to 3.00 N / 20 mm under the conditions of peeling speed: 300 mm / min, peeling temperature: 25 ° C., and T peel. 9. The dicing tape-integrated film adhesive according to claim 8, A method for manufacturing a semiconductor device using the dicing tape-integrated film adhesive according to claim 8 or 9,
Step A for attaching a semiconductor wafer to the film adhesive of the dicing tape-integrated film adhesive;
Step B for dicing the semiconductor wafer together with the film adhesive;
Step C for picking up a semiconductor element with a film adhesive obtained by dicing,
After the semiconductor element with the film adhesive is brought into contact with the adherend, the film adhesive is held within a range of 0.05 to 40 MPa within a range of 50 to 150 ° C. for 0.01 to 2 seconds. Step D to be performed
After the step D, the method further comprises a step E of thermosetting the film adhesive.