CN111500212A - Film-like adhesive, dicing tape-integrated film-like adhesive, and method for manufacturing semiconductor device - Google Patents

Film-like adhesive, dicing tape-integrated film-like adhesive, and method for manufacturing semiconductor device Download PDF

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Publication number
CN111500212A
CN111500212A CN202010353163.3A CN202010353163A CN111500212A CN 111500212 A CN111500212 A CN 111500212A CN 202010353163 A CN202010353163 A CN 202010353163A CN 111500212 A CN111500212 A CN 111500212A
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China
Prior art keywords
adhesive
film
dicing tape
resin
curing
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CN202010353163.3A
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Chinese (zh)
Inventor
菅生悠树
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Nitto Denko Corp
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Nitto Denko Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/001—Conductive additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
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Abstract

The present invention relates to a film-like adhesive, a dicing tape-integrated film-like adhesive, and a method for manufacturing a semiconductor device. A film-like adhesive for semiconductor devices, which contains a thermosetting resin, a curing agent and conductive particles and has a glass transition temperature of 130 ℃ or higher after thermosetting.

Description

Film-like adhesive, dicing tape-integrated film-like adhesive, and method for manufacturing semiconductor device
The application is a divisional application of Chinese patent application with application date of 2014, 3 and 31 and application number of 201480024084.0.
Technical Field
The present invention relates to a film-like adhesive, a dicing tape-integrated film-like adhesive, and a method for manufacturing a semiconductor device.
Background
In the manufacture of semiconductor devices, a method of bonding a semiconductor element to a metal lead frame or the like (so-called die bonding method) has been changed from a conventional gold-silicon eutectic to a method using solder or resin paste. A method using a conductive resin paste is now used.
However, the method using the resin paste has problems of a decrease in conductivity due to voids, a non-uniform thickness of the resin paste, and a contamination of the land due to a protrusion of the resin paste. In order to solve these problems, a film-like adhesive is sometimes used instead of the resin paste (see, for example, patent document 1).
In addition, patent document 2 discloses a film-like adhesive which is provided with flexibility by blending an acrylic copolymer having a glass transition temperature of-10 to 50 ℃ in order to reduce thermal damage to a semiconductor element, a lead frame, or the like.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 6-145639
Patent document 2: japanese patent No. 4137827
Disclosure of Invention
Problems to be solved by the invention
Incidentally, an adhesive having heat resistance has been desired in the past. In particular, a power semiconductor device for controlling or supplying electric power generally has a large amount of heat radiation, and therefore an adhesive used for the power semiconductor device is required to have high heat resistance.
Means for solving the problems
The present inventors have conducted extensive and intensive studies on a film-like adhesive for semiconductor devices. As a result, they have found that when the glass transition temperature (Tg) after curing is higher than a predetermined temperature, the heat resistance is excellent, and have completed the present invention.
That is, the film-like adhesive for semiconductor devices of the present invention contains a thermosetting resin, a curing agent and conductive particles, and has a glass transition temperature of 130 ℃ or higher after thermosetting.
According to the above configuration, the glass transition temperature after heat curing is 130 ℃ or higher, and therefore, the heat resistance is provided. Therefore, if used in a semiconductor device, the semiconductor device can withstand heat dissipation from a semiconductor element or the like. In addition, since the conductive particles are contained, heat generated from the semiconductor element and the like can be effectively released to the outside.
In the above constitution, it is preferable that the resistivity at 25 ℃ after heat curing is 1 × 10-2Omega. m or less, the lower the resistivity, the higher the electrical conductivity, which is proportional to the thermal conductivity, so that the resistivity at 25 ℃ after curing is 1 × 10-2When Ω · m or less, the thermal conductivity is relatively high. As a result, heat from the semiconductor element and the like can be efficiently released to the outside. In particular, when used for a semiconductor element which is small and mounted at high density, heat can be appropriately released to the outside.
In the above configuration, it is preferable that: contains a thermoplastic resin, wherein the weight ratio (A)/(B) is in the range of 1/9-4/6, where A represents the weight of the thermoplastic resin and B represents the total weight of the thermosetting resin and the curing agent. When the weight ratio (a)/(B) is 4/6 or less, the curing component is sufficient, and the glass transition temperature after thermal curing is easily increased. On the other hand, when the weight ratio (a)/(B) is 1/9 or more, a film is easily formed.
In the above configuration, the content of the conductive particles is preferably 30 to 95 wt% with respect to the entire film-like adhesive. When the content of the conductive particles is 30 wt% or more based on the entire film-like adhesive, the thermal conductivity is easily improved. As a result, heat from the semiconductor element and the like can be efficiently released to the outside. On the other hand, when the content of the conductive particles is 95 wt% or less with respect to the entire film-like adhesive, a film is easily formed.
In the above constitution, the tensile storage elastic modulus at 175 ℃ after thermosetting is preferably 50 to 1500 MPa. When the tensile storage elastic modulus at 175 ℃ after heat curing is 50MPa or more, the semiconductor element or the like can be firmly adhered to an adherend. On the other hand, when the tensile storage elastic modulus at 175 ℃ after heat curing is 1500MPa or less, since it has a certain degree of flexibility, it can withstand thermal stress and can suppress peeling from an adherend.
In the above constitution, it is preferable that the shear adhesion to copper at 150 ℃ after holding at 150 ℃, 0.5 second and 0.5MPa is 5 to 200g/25mm2Within the range of (1). The shear adhesion is 5g/25mm2As described above, the semiconductor element can be sufficiently softened at 150 ℃ or lower when it is bonded to a lead frame. As a result, prevention of oxidation of an adherend such as a lead frame and high adhesion to the adherend can be achieved.
In the above constitution, the thickness is preferably in the range of 5 to 100 μm. When the thickness is 5 μm or more, generation of non-adhesive portions can be prevented even if warpage of the chip or the like occurs. On the other hand, when the thickness is 100 μm or less, it is possible to suppress contamination of the pad and the like due to excessive protrusion of the film-like adhesive by a load at the time of die bonding.
In order to solve the above-described problems, the dicing tape-integrated film-like adhesive of the present invention is characterized by comprising a dicing tape in which a pressure-sensitive adhesive layer is laminated on a substrate and the film-like adhesive, and the film-like adhesive is formed on the pressure-sensitive adhesive layer.
In the above configuration, the peeling force between the film-like adhesive and the dicing tape is preferably in the range of 0.01 to 3.00N/20mm under the conditions of a peeling speed of 300 mm/min, a peeling temperature of 25 ℃ and T-shaped peeling. When the peeling force is 0.01N/20mm or more, the scattering of chips during dicing can be suppressed. Further, when the peel force is 3.00N/20mm or less, the pickup can be easily performed.
A method for manufacturing a semiconductor device using the dicing tape-integrated film-like adhesive according to the present invention includes the steps of:
a step A of adhering a semiconductor wafer to the film-like adhesive of the dicing tape-integrated film-like adhesive;
a step B of dicing the semiconductor wafer together with the film-like adhesive;
a step C of picking up the semiconductor element with the film-like adhesive obtained by dicing;
a step D of bringing the semiconductor element with the film-like adhesive into contact with an adherend and then holding the film-like adhesive at a temperature of 50 to 150 ℃, for 0.01 to 2 seconds, and at a pressure of 0.05 to 40 MPa; and
and a step E of heat-curing the film-like adhesive after the step D.
According to the above configuration, the picked-up semiconductor element with the film-like adhesive is brought into contact with an adherend, and then the film-like adhesive is held at 50 to 150 ℃ for 0.01 to 2 seconds and 0.05 to 40MPa (step D). Therefore, when the semiconductor element is adhered to an adherend such as a lead frame, the film-like adhesive can be sufficiently softened at a temperature in the range of 50 to 150 ℃, and can be adhered. Since the film-like adhesive is softened at a relatively low temperature of 150 ℃ or lower, oxidation of an adherend (e.g., a lead frame) can be prevented. Then, the film-like adhesive is thermally cured (step E). Thus, a semiconductor device which can withstand heat dissipation can be obtained. In addition, since the film-like adhesive contains conductive particles, heat generated from a semiconductor or the like can be effectively released to the outside.
Effects of the invention
According to the film-like adhesive and the dicing tape-integrated film-like adhesive of the present invention, when used in a semiconductor device, the film-like adhesive can withstand heat release from a semiconductor element or the like and can efficiently release the heat release from the semiconductor element or the like to the outside.
Further, according to the method for manufacturing a semiconductor device of the present invention, oxidation of an adherend can be prevented, and a semiconductor device which can withstand heat dissipation can be obtained. In addition, heat generated from the semiconductor element and the like can be efficiently released to the outside.
Drawings
Fig. 1 is a schematic sectional view of a dicing tape-integrated film-like adhesive according to an embodiment of the present invention.
Fig. 2 is a schematic sectional view of a dicing tape-integrated film-like adhesive according to another embodiment of the present invention.
Fig. 3 is a diagram for explaining a method of manufacturing a semiconductor device of the present invention.
Detailed Description
[ dicing tape-integrated film-like adhesive ]
The dicing tape-integrated film-like adhesive of the present invention will be described below. Fig. 1 is a schematic sectional view of a dicing tape-integrated film-like adhesive according to an embodiment of the present invention. Fig. 2 is a schematic sectional view of a dicing tape-integrated film-like adhesive according to another embodiment of the present invention.
As shown in fig. 1, the dicing tape-integrated film-like adhesive 10 has a structure in which the film-like adhesive 3 is laminated on a dicing tape 11. The dicing tape 11 is configured by laminating a pressure-sensitive adhesive layer 2 on a substrate 1, and a film-like adhesive 3 is provided on the pressure-sensitive adhesive layer 2. In the present invention, the film-like adhesive 3' may be formed only at the portion to be bonded to the workpiece (semiconductor wafer or the like), as in the dicing tape-integrated film-like adhesive 12 shown in fig. 2.
The film-like adhesive 3 contains a thermosetting resin, a curing agent and conductive particles, and has a glass transition temperature of 130 ℃ or higher after thermosetting. The glass transition temperature after the thermal curing is preferably 140 ℃ or higher. The higher the glass transition temperature after the heat curing, the better, but it is, for example, 300 ℃ or lower. The film-like adhesive 3 has heat resistance because it has a glass transition temperature of 130 ℃ or higher after heat curing. Therefore, if used in a semiconductor device, the semiconductor device can withstand heat dissipation from a semiconductor element or the like. In addition, since the conductive particles are contained, heat generated from the semiconductor element or the like can be efficiently released to the outside. The glass transition temperature can be controlled by adjusting the mixing ratio of the thermoplastic resin and the thermosetting resin or adjusting the valence of the reactive functional group of the thermosetting resin such as an epoxy resin.
In the present specification, the glass transition temperature after thermal curing means the glass transition temperature after heating at 140 ℃ for 1 hour and further heating at 260 ℃ for 5 hours.
The film-like adhesive 3 preferably has a resistivity of 1 × 10 at 25 ℃ after heat curing-2Omega. m or less, the lower the resistivity, the higher the electrical conductivity, which is proportional to the thermal conductivity, so that the resistivity at 25 ℃ after heat curing is 1 × 10-2When Ω · m or less, the thermal conductivity is relatively high. As a result, heat from the semiconductor element or the like can be efficiently released to the outside. In particular, when used for a semiconductor element which is small and mounted at high density, heat can be released to the outside as appropriate.
In the present specification, the resistivity at 25 ℃ after thermosetting means the resistivity after heating at 140 ℃ for 5 hours and then at 260 ℃.
The film-like adhesive 3 preferably has a storage elastic modulus at 175 ℃ after thermosetting of 50 to 1500MPa, more preferably 75 to 1200 MPa. When the storage elastic modulus at 175 ℃ after heat curing is 50MPa or more, the semiconductor element can be firmly adhered to an adherend. On the other hand, when the storage elastic modulus at 175 ℃ after heat curing is 1500MPa or less, since it has a certain degree of flexibility, it can withstand thermal stress and can suppress peeling from an adherend.
The storage elastic modulus at 175 ℃ after thermal curing in the present specification means a storage elastic modulus at 175 ℃ after heating at 140 ℃ for 1 hour and further heating at 260 ℃ for 5 hours.
The film-like adhesive 3 preferably has a storage elastic modulus at 25 ℃ of 5MPa or more, more preferably 2 × 102Is more than MPa. Less than 5MPaThe adhesive force with the dicing tape is increased and the pickup property tends to be lowered, and the storage elastic modulus at 25 ℃ of the film-like adhesive 3 is preferably 5 × 103MPa or less, more preferably 3 × 103MPa or less, more preferably 2.5 × 103Below MPa and over 5 × 103MPa is difficult to mix.
The film-like adhesive 3 preferably has a surface roughness (Ra) of 0.1 to 1000 nm. By adjusting the surface roughness to 1000nm or less, the low-temperature adhesiveness can be improved. In addition, the adhesiveness to an adherend at the time of chip mounting can be improved. It is generally difficult to adjust the surface roughness to 0.1nm or less.
The film-like adhesive 3 has a thermal conductivity of, for example, 0.5W/mK or more as the thermal conductivity is higher at a measurement temperature of 25 ℃ after thermal curing. When the thermal conductivity is 0.5W/mK or more, the heat dissipation property is good, and the heat sink can be applied to small-sized and high-density mounting.
In the present specification, the thermal conductivity at a measurement temperature of 25 ℃ after thermal curing means the thermal conductivity at 25 ℃ after heating at 140 ℃ for 1 hour and further heating at 260 ℃ for 5 hours.
The film-like adhesive 3 is preferably 0.2N/10mm or more when it is stuck to a wafer having a back metal film at 70 ℃ and then the adhesion is measured at 25 ℃. By adjusting the adhesion to 0.2N/10mm or more, chip scattering during dicing can be suppressed. The back metal film is a film formed by vapor deposition of metal or a film formed by plating metal on the back surface of the wafer. The back metal film is generally smaller in surface free energy than the silicon wafer, and therefore it is difficult to attach the film-like adhesive 3. That is, by adjusting the adhesion to 0.2N/10mm or more, chip scattering during dicing can be suppressed and yield can be improved even in the manufacture of a semiconductor device using a wafer having a back metal film to which the film-like adhesive 3 is difficult to adhere. The adhesion was measured under the conditions of a peel angle of 180 degrees, a peel temperature of 25 degrees, and a peel speed of 300 mm/min.
150 ℃ of the film-like adhesive 3 after holding at 150 ℃ for 0.5 second and 0.5MPaThe shearing adhesive force between the copper and the copper is preferably 5-200 g/25mm2Within the range of (1). The shearing adhesive force is 5g/25mm2As described above, when the semiconductor element and the lead frame are bonded, they can be sufficiently softened at 150 ℃. As a result, prevention of oxidation of an adherend such as a lead frame and high adhesion to the adherend can be achieved. The shear adhesion was measured by the method described in examples.
The film-like adhesive 3 preferably contains a thermoplastic resin. Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, an ethylene-vinyl acetate copolymer, an ethylene-acrylic acid ester copolymer, a polybutadiene resin, a polycarbonate resin, a thermoplastic polyimide resin, a polyamide resin such as nylon 6 or nylon 6, a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET or PBT, a polyamideimide resin, a fluorine-containing resin, and the like. Among these thermoplastic resins, acrylic resins having few ionic impurities, high heat resistance, and capable of securing reliability of semiconductor devices are particularly preferable.
The acrylic resin is not particularly limited, and examples thereof include a polymer (acrylic copolymer) containing one or more kinds of acrylic acid esters or methacrylic acid esters having a linear or branched alkyl group having 30 or less carbon atoms, particularly having 4 to 18 carbon atoms, as a component. Examples of the alkyl group include: methyl, ethyl, propyl, isopropyl, n-butyl, t-butyl, isobutyl, pentyl, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, octadecyl, or dodecyl, and the like.
Further, other monomers for forming the polymer (acrylic copolymer) are not particularly limited, and examples thereof include: carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; anhydride monomers such as maleic anhydride and itaconic anhydride; hydroxyl group-containing monomers such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl acrylate; sulfonic acid group-containing monomers such as styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, (meth) sulfopropyl acrylate, and (meth) acryloyloxynaphthalenesulfonic acid; or a monomer having a phosphoric acid group such as 2-hydroxyethyl acryloylphosphate.
Among the acrylic resins, acrylic resins having a weight average molecular weight of 10 ten thousand or more are preferable, acrylic resins having a weight average molecular weight of 30 to 300 ten thousand are more preferable, and acrylic resins having a weight average molecular weight of 50 to 200 ten thousand are even more preferable. This is because when the weight average molecular weight is within the above numerical range, the adhesiveness and heat resistance are excellent. The weight average molecular weight is a value calculated by measuring by GPC (gel permeation chromatography) and converting to polystyrene.
The glass transition temperature of the thermoplastic resin is preferably-40 ℃ or higher, more preferably-35 ℃ or higher, and still more preferably-25 ℃ or higher. The glass transition temperature of the thermoplastic resin is adjusted to-40 ℃ or higher, whereby the thermoplastic resin can be easily picked up. The glass transition temperature of the thermoplastic resin is preferably-10 ℃ or lower, more preferably-11 ℃ or lower. By adjusting the glass transition temperature of the thermoplastic resin to-10 ℃ or lower, the film-like adhesive 3 can be easily attached to a semiconductor wafer at a low temperature of about 40 ℃. In the present specification, the glass transition temperature of a thermoplastic resin is a theoretical value obtained by the Fox equation.
The film-like adhesive 3 contains a thermosetting resin as described above.
Examples of the thermosetting resin include a phenol resin, an amino resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. In particular, an epoxy resin having a low content of ionic impurities and the like which corrode a semiconductor element is preferable. As the curing agent for the epoxy resin, a phenol resin is preferable.
The epoxy resin is not particularly limited, and for example: a bifunctional epoxy resin or a polyfunctional epoxy resin such as a bisphenol A type, a bisphenol F type, a bisphenol S type, a brominated bisphenol A type, a hydrogenated bisphenol A type, a bisphenol AF type, a biphenyl type, a naphthalene type, a fluorene type, a phenol novolak type, an o-cresol novolak type, a tris (hydroxyphenyl) methane type, a tetrakis (hydroxyphenyl) ethane type, or the like, or an epoxy resin such as a hydantoin type, a triglycidyl isocyanurate type, or a glycidylamine type. Among these epoxy resins, particularly preferred is a novolak type epoxy resin, a biphenyl type epoxy resin, a tris (hydroxyphenyl) methane type epoxy resin or a tetrakis (hydroxyphenyl) ethane type epoxy resin. This is because: these epoxy resins are highly reactive with phenolic resins as curing agents and are excellent in heat resistance and the like.
The phenol resin functions as a curing agent for the epoxy resin, and examples thereof include: and novolak-type phenol resins such as phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin, resol-type phenol resins, polyhydroxystyrenes such as poly-p-hydroxystyrene, and the like. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferable. This is because the connection reliability of the semiconductor device can be improved.
The mixing ratio of the epoxy resin and the phenol resin is preferably, for example, 0.5 to 2.0 equivalents based on 1 equivalent of the epoxy group in the epoxy resin component and the hydroxyl group in the phenol resin. More preferably 0.8 to 1.2 equivalents. Namely, this is because: if the mixing ratio of the two components is outside the above range, the curing reaction is insufficient, and the properties of the cured product tend to be deteriorated.
The film-like adhesive 3 preferably contains a thermosetting resin which is solid at 25 ℃ and a thermosetting resin which is liquid at 25 ℃. Thus, good low-temperature adhesion can be obtained. In the present specification, the term "liquid at 25 ℃ means that the viscosity at 25 ℃ is less than 5000 pas. On the other hand, the solid at 25 ℃ means that the viscosity at 25 ℃ is 5000 pas or more. Note that the viscosity can be measured using a model HAAKE Roto VISCO1 manufactured by Thermo Scientific.
In the film-like adhesive 3, the ratio of (the weight of the thermosetting resin in a solid state at 25 ℃)/(the weight of the thermosetting resin in a liquid state at 25 ℃) is preferably 49/51 to 10/90, and more preferably 45/55 to 40/60. By adjusting the ratio of (weight of thermosetting resin solid at 25 ℃)/(weight of thermosetting resin liquid at 25 ℃) to 49/51, the film-like adhesive 3 can be easily adhered to a semiconductor wafer at a low temperature of about 40 ℃, and the low-temperature adhesion can be improved. On the other hand, by adjusting (the weight of the thermosetting resin that is solid at 25 ℃)/(the weight of the thermosetting resin that is liquid at 25 ℃) to 10/90 or less, the adhesiveness of the film-like adhesive 3 can be suppressed from becoming too high, and the pickup property can be improved.
The total content of the thermoplastic resin and the thermosetting resin in the film-like adhesive 3 is preferably 5 wt% or more, and more preferably 10 wt% or more, based on the entire film-like adhesive 3. When the amount is 5% by weight or more, the shape of the film can be easily maintained. The total content of the thermoplastic resin and the thermosetting resin is preferably 70 wt% or less, and more preferably 60 wt% or less, based on the entire film-like adhesive 3. When the content is 70% by weight or less, the conductive particles exhibit appropriate conductivity.
In the film-like adhesive 3, the weight ratio (a)/(B) is preferably in the range of 1/9 to 4/6, where a represents the weight of the thermoplastic resin and B represents the total weight of the thermosetting resin and the curing agent. When the weight ratio (a)/(B) is 4/6 or less, the curing component is sufficient, and the glass transition temperature after heat curing is easily increased. On the other hand, when the weight ratio (a)/(B) is 1/9 or more, a film is easily formed.
The film-like adhesive 3 contains conductive particles. The conductive particles are not particularly limited, and examples thereof include nickel particles, copper particles, silver particles, gold particles, aluminum particles, carbon black particles, carbon nanotubes as fiber particles, particles obtained by coating the surface of core particles with a conductive material, and the like.
The core particles may be either conductive or non-conductive, and for example, glass particles or the like may be used. As the conductive material for coating the surface of the core particle, metals such as nickel, copper, silver, gold, and aluminum can be used.
The shape of the conductive particles is not particularly limited, and for example, flake, needle, filament, spherical, scale-like conductive particles and the like can be used. Among them, the flake form is preferable from the viewpoint of improving dispersibility and filling ratio.
The average particle diameter of the conductive particles is not particularly limited, but is preferably 0.001 times or more (×.001 times or more the thickness of the film-like adhesive 3), more preferably 0.1 times or more, and by setting to 0.001 times or more, thermal conductivity is easily improved, and as a result, heat from a semiconductor element or the like can be more effectively released to the outside, and further, the average particle diameter of the conductive particles is preferably 1 times or less (1 time or less the thickness of the film-like adhesive 3) and more preferably 0.8 times or less, and by setting to 1 time or less, chip cracking can be suppressed.
The specific gravity of the conductive particles is preferably 0.7 or more, and more preferably 1 or more. By setting to 0.7 or more, it is possible to suppress floating of the conductive particles and uneven dispersion of the conductive particles when preparing the adhesive composition solution (varnish). The specific gravity of the conductive particles is preferably 22 or less, and more preferably 21 or less. By setting the specific gravity to 22 or less, precipitation of the conductive particles and dispersion unevenness of the conductive particles can be suppressed.
The content of the conductive particles in the film-like adhesive 3 is preferably 30 wt% or more, and more preferably 40 wt% or more, based on the entire film-like adhesive 3. The content of the conductive particles is preferably 95 wt% or less, and more preferably 94 wt% or less. By adjusting the content of the conductive particles to 30 wt% or more, thermal conductivity is easily improved. As a result, heat from the semiconductor element or the like can be released to the outside more efficiently. On the other hand, by adjusting the content of the conductive particles to 95 wt% or less, a thin film is easily formed.
The film-like adhesive 3 may contain, in addition to the above components, compounding agents generally used in film production, for example, a crosslinking agent.
The film-like adhesive 3 can be produced by a usual method. For example, the film-like adhesive 3 can be produced by preparing an adhesive composition solution containing the above components, applying the adhesive composition solution to a substrate separator so as to have a predetermined thickness to form a coating film, and drying the coating film.
The solvent used in the adhesive composition solution is not particularly limited, and is preferably an organic solvent capable of uniformly dissolving, kneading or dispersing the above components. Examples thereof include: ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone and cyclohexanone, and toluene and xylene.
As the base separator, a plastic film or paper coated with a release agent such as a fluorine-containing release agent or a long-chain alkyl acrylate release agent, or polyethylene terephthalate (PET), polyethylene, or polypropylene can be used. Examples of the method for applying the adhesive composition solution include roll coating, screen coating, and gravure coating. The drying conditions of the coating film are not particularly limited, and the coating film may be dried at a drying temperature of 70 to 160 ℃ for a drying time of 1 to 5 minutes, for example.
The thickness of the film-like adhesive 3 is preferably 5 μm or more, and more preferably 15 μm or more. The thickness of the film-like adhesive 3 is preferably 100 μm or less, and more preferably 50 μm or less. When the thickness of the film-like adhesive 3 is 5 μm or more, even if warpage of the chip or the like occurs, the occurrence of non-adhered portions can be prevented. On the other hand, when the thickness of the film-like adhesive 3 is 100 μm or less, it is possible to suppress the film-like adhesive 3 from excessively protruding due to a load at the time of die bonding and contaminating the pad and the like.
The film-like adhesive 3 can be suitably used for manufacturing a semiconductor device. Among them, the adhesive is particularly suitable for use as a die bonding film for bonding an adherend such as a lead frame to a semiconductor chip (die bonding). Examples of the adherend include a lead frame, an interposer, a semiconductor chip, and the like. Among them, a lead frame is preferable.
As shown in the present embodiment, the film-like adhesive 3 is preferably provided as a dicing tape-integrated film-like adhesive in an integrated manner with a dicing tape. However, the film-like adhesive of the present invention may be provided as a film-like adhesive alone without being adhered to a dicing tape. In this case, the film-like adhesive can be adhered to the dicing tape to have the same configuration as the dicing tape-integrated film-like adhesive.
The substrate 1 is a strength matrix of the dicing tape-integrated film- like adhesives 10 and 12, and preferably has ultraviolet transparency. Examples of the substrate 1 include: low-density polyethylene, linear polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, propylene homopolymer, polyolefin such as polybutene and polymethylpentene, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylate (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyester such as polyethylene terephthalate and polyethylene naphthalate, polycarbonate, polyimide, polyether ether ketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylene sulfide, aromatic polyamide (paper), glass cloth, fluorine-containing resin, polyvinyl chloride, polyvinylidene chloride, polyethylene terephthalate, polyethylene naphthalate, etc., glass, cellulose resin, silicone resin, metal (foil), paper, and the like.
The surface of the substrate 1 may be subjected to a conventional surface treatment, for example, a chemical or physical treatment such as a chromic acid treatment, exposure to ozone, exposure to flame, exposure to high-voltage electric shock, or treatment with ionizing radiation, or a coating treatment with an undercoating agent (for example, an adhesive substance described later) in order to improve adhesion to an adjacent layer, holding properties, or the like.
The thickness of the substrate 1 is not particularly limited and may be appropriately determined, and is generally about 5 μm to about 200 μm.
As the adhesive used for forming the adhesive layer 2, there is no particular limitation, and for example: general pressure-sensitive adhesives such as acrylic adhesives and rubber adhesives. As the pressure-sensitive adhesive, an acrylic adhesive containing an acrylic polymer as a base polymer is preferable from the viewpoint of cleaning ability of electronic parts such as semiconductor wafers and glass which are resistant to contamination by using an organic solvent such as ultrapure water or alcohol.
Examples of the acrylic polymer include: and acrylic polymers using, as monomer components, one or more of alkyl (meth) acrylates (e.g., methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl, tridecyl, tetradecyl, hexadecyl, octadecyl, and eicosyl esters, and the like, and linear or branched alkyl esters having 1 to 30 carbon atoms, particularly 4 to 18 carbon atoms) and cycloalkyl (meth) acrylates (e.g., cyclopentyl, cyclohexyl, and the like). The (meth) acrylate represents an acrylate and/or a methacrylate, and all of the (meth) acrylates in the present invention have the same meaning.
The acrylic polymer may contain units corresponding to other monomer components copolymerizable with the alkyl (meth) acrylate or cycloalkyl ester as necessary for improving cohesion, heat resistance, and the like. Examples of such monomer components include: carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; anhydride monomers such as maleic anhydride and itaconic anhydride; hydroxyl group-containing monomers such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; sulfonic acid group-containing monomers such as styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, (meth) sulfopropyl acrylate, and (meth) acryloyloxynaphthalenesulfonic acid; phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloylphosphate; acrylamide, acrylonitrile, and the like. These copolymerizable monomer components may be used singly or in combination. The amount of the copolymerizable monomer is preferably 40% by weight or less based on the total monomer components.
The acrylic polymer may contain a polyfunctional monomer or the like as a comonomer component as necessary for crosslinking. Examples of such polyfunctional monomers include: hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) acrylate, and the like. These polyfunctional monomers may be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.
The acrylic polymer may be obtained by polymerizing a single monomer or a mixture of two or more monomers. The polymerization may be carried out by any means such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, etc. The content of the low molecular weight substance is preferably small from the viewpoint of preventing contamination of a clean adherend, and the like. From this viewpoint, the number average molecular weight of the acrylic polymer is preferably 30 ten thousand or more, and more preferably from about 40 to about 300 ten thousand.
In addition, an external crosslinking agent may be suitably used in the binder in order to increase the number average molecular weight of an acrylic polymer or the like as a base polymer. Specific examples of the external crosslinking method include: a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, or the like and reacting them. When the external crosslinking agent is used, the amount thereof is suitably determined in accordance with the balance with the base polymer to be crosslinked and the use as an adhesive. Generally, the amount of the polymer is preferably about 5 parts by weight or less, more preferably 0.1 to 5 parts by weight, based on 100 parts by weight of the base polymer. In addition to the above components, various additives such as a tackifier and an antioxidant which are conventionally known can be used in the adhesive as needed.
The adhesive layer 2 may be formed of a radiation curable adhesive. The radiation-curable pressure-sensitive adhesive can be easily reduced in adhesive force by increasing the crosslinking degree by irradiation with radiation such as ultraviolet rays.
By irradiating only the portion 2a of the pressure-sensitive adhesive layer 2 shown in fig. 1 corresponding to the work attaching portion with radiation, the difference in adhesion force with the other portion 2b can be set. At this time, the portion 2b formed of the uncured radiation curable adhesive is bonded to the film-like adhesive 3, and the holding force at the time of cutting can be secured.
In addition, by curing the radiation-curable pressure-sensitive adhesive layer 2 with the film-like adhesive 3' shown in fig. 2, the portion 2a having a significantly reduced adhesive force can be easily formed. At this time, the patch ring may be fixed to the portion 2b formed of the uncured radiation curing type adhesive.
That is, when the pressure-sensitive adhesive layer 2 is formed of a radiation-curable pressure-sensitive adhesive, the portion 2a is preferably irradiated with radiation so that the adhesive force of the portion 2a in the pressure-sensitive adhesive layer 2 is smaller than that of the other portion 2 b.
The radiation-curable adhesive may be an adhesive having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness, without any particular limitation. Examples of the radiation-curable adhesive include: an additive radiation-curable adhesive in which a radiation-curable monomer component or oligomer component is blended with a general pressure-sensitive adhesive such as the acrylic adhesive or the rubber-based adhesive.
Examples of the radiation-curable monomer component to be blended include: urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1, 4-butanediol di (meth) acrylate, and the like. The radiation curable oligomer component may be various oligomers such as polyurethanes, polyethers, polyesters, polycarbonates, and polybutadienes, and the molecular weight thereof is preferably in the range of about 100 to about 30000. The compounding amount of the radiation-curable monomer component or oligomer component may be appropriately determined depending on the kind of the adhesive layer in an amount capable of reducing the adhesive force of the adhesive layer. In general, the amount of the acrylic polymer or other base polymer is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight, based on 100 parts by weight of the base polymer constituting the adhesive.
The radiation-curable adhesive may be an internal radiation-curable adhesive in which a polymer having a carbon-carbon double bond in a side chain or a main chain of the polymer or at a terminal of the main chain is used as a base polymer, in addition to the additive radiation-curable adhesive described above. The internal radiation curable adhesive does not need to contain or contain a large amount of oligomer components or the like as low molecular weight components, and therefore, the oligomer components or the like do not move in the adhesive with time, and a stable adhesive layer having a layer structure can be formed, which is preferable.
The base polymer having a carbon-carbon double bond may use a polymer having a carbon-carbon double bond and having an adhesive property without particular limitation. As such a base polymer, a polymer having an acrylic polymer as a basic skeleton is preferable. The basic skeleton of the acrylic polymer is exemplified by the acrylic polymers described above.
The method for introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be employed, and introduction of a carbon-carbon double bond into a polymer side chain is easy in molecular design. Examples thereof include: a method in which a monomer having a functional group is copolymerized in advance in an acrylic polymer, and then a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is subjected to condensation or addition reaction while maintaining the radiation curability of the carbon-carbon double bond.
Examples of combinations of these functional groups include carboxyl groups and epoxy groups, carboxyl groups and aziridine groups, hydroxyl groups and isocyanate groups, and the like, and combinations of these functional groups are preferred in view of ease of reaction follow-up, and combinations of hydroxyl groups and isocyanate groups are preferred, and if the acrylic polymer having a carbon-carbon double bond is formed by combinations of these functional groups, the functional groups may be either one of the acrylic polymer and the above-mentioned compounds, and in the above-mentioned preferred combinations, the acrylic polymer preferably has a hydroxyl group and the above-mentioned compound has an isocyanate group.
The internal radiation-curable adhesive may be used alone or may be compounded with the radiation-curable monomer component or oligomer component to such an extent that the characteristics are not deteriorated. The radiation curable oligomer component and the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight, based on 100 parts by weight of the base polymer.
The radiation-curable adhesive may contain a photopolymerization initiator when cured by ultraviolet light or the like, and examples of the photopolymerization initiator include α -ketol compounds such as 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α -hydroxy- α '-dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, and 1-hydroxycyclohexylphenylketone, acetophenone compounds such as methoxyacetophenone, 2-dimethoxy-2-phenylacetophenone, 2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio) phenyl ] -2-morpholinopropane-1-one, acetophenone ether compounds such as benzoin isopropyl ether and anisole, ketal compounds such as benzil dimethyl ketal, aromatic sulfonyl chloride compounds such as 2-naphthalenesulfonyl chloride, photoactive oxime compounds such as 1-phenyl-1, 2-propanedione-2- (O-ethoxycarbonyl) oxime, photoactive compounds such as benzophenone, benzoylbenzoic acid, 3' -dimethyl-4-methoxythioxanthone, and 2-dichlorothioxanthone, and the photopolymerization initiator may be used in amounts of about 20 parts by weight, about 100 parts by weight, and about 20 parts by weight of the photopolymerization initiator, 2-dichlorothioxanthone, and about 20 parts by weight of the photopolymerization initiator, and the photopolymerization initiator.
Examples of the radiation-curable adhesive include: JP-A60-196956 discloses a composition comprising an addition polymerizable compound having 2 or more unsaturated bonds, a photopolymerizable compound such as an alkoxysilane having an epoxy group, a carbonyl compound, an organic sulfur compound, a peroxide, an amine, a metal halide, a metal,
Figure BDA0002472562410000191
A rubber-based adhesive or an acrylic-based adhesive containing a photopolymerization initiator such as a salt-based compound.
The radiation-curable pressure-sensitive adhesive layer 2 may contain a compound that is colored by irradiation with radiation, if necessary. By containing a compound colored by irradiation with radiation in the pressure-sensitive adhesive layer 2, only a portion irradiated with radiation can be colored. The compound colored by irradiation with radiation is a compound which is colorless or pale before irradiation with radiation but becomes colored by irradiation with radiation, and examples thereof include leuco dyes and the like. The ratio of the compound to be colored by irradiation with radiation may be appropriately set.
The thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, and is preferably about 1 μm to about 50 μm from the viewpoint of achieving both prevention of chipping of the chip cut surface and fixation and holding of the pressure-sensitive adhesive layer. Preferably 2 to 30 μm, more preferably 5 to 25 μm.
The film-like adhesives 3 and 3' of the dicing tape-integrated film- like adhesives 10 and 12 are preferably protected by a separator (not shown). The separator has a function as a protective material for protecting the film-like adhesives 3, 3' before being supplied to practical use. The separator is peeled off when a work is attached to the film-like adhesives 3 and 3' of the dicing tape-integrated film-like adhesive. As the separator, a plastic film or paper coated with a release agent such as a fluorine-containing release agent or a long-chain alkyl acrylate release agent, polyethylene terephthalate (PET), polyethylene, polypropylene, or the like can be used.
The dicing tape-integrated film- like adhesives 10 and 12 can be produced by a usual method. For example, the dicing tape-integrated film- like adhesives 10 and 12 can be manufactured by bonding the pressure-sensitive adhesive layer 2 of the dicing tape 11 to the film-like adhesives 3 and 3'.
In the dicing tape-integrated film- like adhesives 10 and 12, the peeling force between the film-like adhesive 3 or 3' and the dicing tape 11 is preferably in the range of 0.01 to 3.00N/20mm, more preferably in the range of 0.02 to 2.00N/20mm under the conditions of a peeling speed of 300 mm/min, a peeling temperature of 25 ℃ and T-shaped peeling. When the peeling force is 0.01N/20mm or more, the scattering of chips during dicing can be suppressed. Further, when the peel force is 3.00N/20mm or less, the pickup can be easily performed.
[ method for manufacturing semiconductor device ]
The method for manufacturing a semiconductor device according to the present embodiment includes at least the steps of:
a step A of adhering a semiconductor wafer to the film-like adhesive of the dicing tape-integrated film-like adhesive;
a step B of dicing the semiconductor wafer together with the film-like adhesive;
a step C of picking up the semiconductor element with the film-like adhesive obtained by dicing;
a step D of bringing the semiconductor element with the film-like adhesive into contact with an adherend and then holding the film-like adhesive at a temperature of 50 to 150 ℃, for 0.01 to 2 seconds, and at a pressure of 0.05 to 40 MPa; and
and a step E of heat-curing the film-like adhesive after the step D.
Hereinafter, a method for manufacturing a semiconductor device according to the present embodiment will be described by taking a case of manufacturing a semiconductor device using the dicing tape-integrated film-like adhesive 10 as an example with reference to fig. 3. Fig. 3 is a diagram for explaining a method of manufacturing a semiconductor device of the present invention.
First, the semiconductor wafer 4 is pressed against the semiconductor wafer bonding portion 3a of the film-like adhesive 3 in the dicing tape-integrated film-like adhesive 10, and is fixed by being bonded and held (bonding step, step a). This step is performed while being pressed by a pressing tool such as a pressure roller. At this time, the crimping may be performed at a low temperature of about 40 ℃. Specifically, the pressure bonding temperature (sticking temperature) is preferably 35 ℃ or higher, and more preferably 37 ℃ or higher. The upper limit of the pressure bonding temperature is preferably 50 ℃ or lower, more preferably 45 ℃ or lower, and further preferably 43 ℃ or lower. Since the adhesive can be adhered to the semiconductor wafer 4 at a low temperature of about 40 ℃, the thermal influence on the semiconductor wafer 4 can be prevented, and the warpage of the semiconductor wafer 4 can be suppressed.
The pressure at the time of crimping is preferably 1 × 105～1×107Pa, more preferably 2 × 105～8×106Pa. The time for the pressure bonding is preferably 1 second to 5 minutes, and more preferably 1 minute to 3 minutes.
Then, the semiconductor wafer 4 is diced together with the film-like adhesive 3 (step B). In this way, the semiconductor wafer 4 is cut into individual pieces having a predetermined size, and the semiconductor chips 5 are manufactured. Dicing is performed, for example, from the circuit face side of the semiconductor wafer 4 according to a conventional method. In this step, for example, a dicing method called full dicing, which cuts into the dicing tape-integrated film-like adhesive 10, may be employed. The cutting device used in this step is not particularly limited, and a conventionally known cutting device can be used. Further, since the semiconductor wafer 4 is fixed by the dicing tape-integrated film-like adhesive 10, chipping and chip scattering can be suppressed, and breakage of the semiconductor wafer 4 can be suppressed.
Then, the semiconductor chip 5 is picked up in order to peel off the semiconductor chip 5 adhesively fixed by the dicing tape integrated film-like adhesive 10 (step C). The pickup method is not particularly limited, and various conventionally known methods can be employed. Examples thereof include: and a method in which each semiconductor chip 5 is pushed up from the dicing tape-integrated film-like adhesive 10 side by a needle, and the pushed-up semiconductor chip 5 is picked up by a pickup device.
Here, when the pressure-sensitive adhesive layer 2 is an ultraviolet-curable pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer 2 is irradiated with ultraviolet rays and then picked up. This reduces the adhesive force of the adhesive layer 2 to the film-like adhesive 3, and facilitates the peeling of the semiconductor chip 5 with the film-like adhesive 3. As a result, the pickup can be performed without damaging the semiconductor chip 5. Conditions such as irradiation intensity and irradiation time in the ultraviolet irradiation are not particularly limited, and can be appropriately set as necessary.
The picked-up semiconductor chip 5 is adhesively fixed to an adherend 6 with a film-like adhesive 3 (die bonding, step D). In this case, after the semiconductor chip 5 with the film-like adhesive is brought into contact with the adherend 6, the film-like adhesive 3 is held at a temperature in the range of 50 to 150 ℃ (preferably in the range of 80 to 140 ℃), in the range of 0.01 to 2 seconds (preferably 0.02 to 1.5 seconds), and in the range of 0.05 to 40MPa (preferably 0.1 to 30 MPa). This can sufficiently soften and adhere the film-like adhesive 3. Since the film-like adhesive 3 is softened at a relatively low temperature of 150 ℃ or lower, the adherend 6 can be prevented from being oxidized.
Subsequently, the film-like adhesive 3 is thermally cured (step E). Thereby, the semiconductor chip 5 is bonded to the adherend 6. The heating temperature at the time of thermal curing is preferably 100 ℃ or higher, more preferably 120 ℃ or higher. The heating temperature at the time of thermal curing is preferably 350 ℃ or lower, more preferably 300 ℃ or lower. When the heating temperature is within the above range, the adhesive can be satisfactorily adhered.
Then, a wire bonding step is performed in which the tip of the terminal portion (inner lead) of the adherend 6 is electrically connected to an electrode pad (not shown) on the semiconductor chip 5 by a bonding wire 7. As the bonding wire 7, for example: gold, aluminum, or copper wires, etc. The temperature at the time of wire bonding is preferably 80 ℃ or higher, more preferably 120 ℃ or higher, and the temperature is preferably 250 ℃ or lower, more preferably 175 ℃ or lower. The heating time is set to several seconds to several minutes (for example, 1 second to 1 minute). The connection of the wires is performed by using a combination of vibration energy of ultrasonic waves and pressure energy generated by applying pressure in a state heated to the temperature range.
Next, a sealing step of sealing the semiconductor chip 5 with the sealing resin 8 is performed. This step is performed to protect the semiconductor chip 5 or the bonding wire 7 mounted on the adherend 6. This step is performed by molding a resin for sealing with a mold. As the sealing resin 8, for example, an epoxy resin can be used. The heating temperature at the time of resin sealing is preferably 165 ℃ or higher, more preferably 170 ℃ or higher, and the heating temperature is preferably 185 ℃ or lower, more preferably 180 ℃ or lower.
The sealing material may be further heated (post-curing step) as necessary. This allows the sealing resin 8, which has not been sufficiently cured in the sealing step, to be completely cured. The heating temperature can be set as appropriate.
Examples
The present invention will be described in detail below with reference to examples, but the present invention is not limited to the following examples as long as the gist thereof is not exceeded. In each example, parts are by weight unless otherwise specified.
The components used in the examples are explained below.
Teisan Resin SG-70L (acrylic copolymer, Mw: 90 ten thousand, glass transition temperature: -13 ℃ C.) manufactured by Nagase ChemteX
EOCN-1020-4 (epoxy resin solid at 25 ℃): manufactured by Nippon Kabushiki Kaisha
HP-4700 (epoxy resin solid at 25 ℃): DIC corporation
HP-4032D (epoxy resin liquid at 25 ℃): DIC corporation
JER828 (epoxy resin liquid at 25 ℃): mitsubishi chemical corporation
MEH-8000H (phenolic resin as curing agent): manufactured by Minghe chemical Co., Ltd
1400YP (conductive particles, copper powder, average particle diameter: 7 μm): manufactured by Mitsui Metal mining Co Ltd
SPH02J (conductive particles, silver powder, average particle diameter: 1 μm): manufactured by Mitsui Metal mining Co Ltd
TPP-K (curing Accelerator): manufactured by Beixing chemical Co Ltd
Examples and comparative examples
The components shown in Table 1 and a solvent (methyl ethyl ketone) were charged into a stirring vessel of a Banbury mixer (HM-500, manufactured by Kenzy) in accordance with the mixing ratios shown in Table 1, and stirred and mixed for 3 minutes in a stirring mode. The resulting varnish was applied to a release-treated film (MRA 50 manufactured by mitsubishi resin co., ltd.) and then dried to prepare a film-like adhesive. The thickness of each film-like adhesive is shown in table 1. Table 1 shows the weight ratio (a)/(B) when the weight of the thermoplastic resin is a and the total weight of the thermosetting resin and the curing agent is B, and the content (wt%) of the conductive particles with respect to the entire film-like adhesive.
Figure BDA0002472562410000251
The obtained film-like adhesive was cut into a 230mm circle and attached to an adhesive layer of a dicing tape (P2130G manufactured by ritong electrical corporation) at 25 ℃.
A silicon wafer (0.6 mm thick, manufactured by shin-Etsu chemical Co., Ltd.) was ground to a thickness of 0.2mm using a back grinder (DFG-8560 manufactured by DISCO, Ltd.). Then, Ti (titanium) was deposited on the ground surface to a thickness of 200 nm. Then, Ni (nickel) was vapor-deposited on the Ti layer to a thickness of 200 nm. Then, Ag (silver) was vapor-plated on the Ni layer to have a thickness of 300 nm. In the above-described operation, a wafer with a back metal film was produced.
The following evaluations were carried out using the obtained film-like adhesive, dicing tape-integrated film-like adhesive, and wafer with back metal film. The results are shown in Table 2.
[ measurement of glass transition temperature after Heat curing and measurement of storage elastic modulus at 175 ℃ after Heat curing ]
The film-like adhesive was laminated to a thickness of 500. mu.m. Then, the mixture was heated at 140 ℃ for 1 hour and further heated at 260 ℃ for 5 hours to thermally cure the mixture. Then, the resulting mixture was cut into a strip having a length of 22.5mm (measurement length) and a width of 10mm using a cutter, and the storage elastic modulus at-50 to 300 ℃ was measured using a solid viscoelasticity measuring apparatus (RSAII, manufactured by Rheometric Scientific Co., Ltd.). The measurement conditions were: the frequency was 1Hz, and the temperature rise rate was 10 ℃/min. The value at 175 ℃ at this time was taken as the storage elastic modulus at 175 ℃ after heat curing. The glass transition temperature was obtained by calculating the value of tan (E "(loss elastic modulus)/E' (storage elastic modulus)). The results are shown in Table 2.
[ measurement of resistivity at 25 ℃ after Heat curing ]
The film-like adhesives of examples and comparative examples were heated at 140 ℃ for 1 hour and further heated at 260 ℃ for 5 hours to be thermally cured. Then, the measurement was performed by a four-terminal method using a circuit element measuring instrument (m Ω hitter AC3560, japan electric motors). The results are shown in Table 2.
[ measurement of peeling force between film-like adhesive and dicing tape ]
A polyester adhesive tape (BT-315 manufactured by hitto electrical corporation) was bonded to a film-like adhesive of a dicing tape-integrated film-like adhesive for holding, and the resultant was cut into a width of 100mm × 100mm to prepare a sample, and the film-like adhesive was peeled from the dicing tape by T-peeling at a peeling speed of 300 mm/min and a peeling temperature of 25 ℃.
[ measurement of shear adhesion to copper ]
The adhesive in the form of a film of each of examples and comparative examples was bonded to silicon having a thickness of 500 μm and a thickness of 5mm × 5mm at 60 ℃ to prepare a chip for measuring shear adhesion, and the adhesive surface of the chip for measurement was held and bonded to a copper plate having a thickness of 200 μm (JIS Standard C1020) by using a shear tester (manufactured by Dage corporation, Dage4000) under conditions of 150 ℃, 0.5 second and 0.5MPa, and the shear adhesion between the adhesive in the form of a film and copper was measured on the sample for measurement under conditions of a measurement speed of 500 μm/s, a measurement pitch of 100 μm, a table temperature of 150 ℃ and a shear adhesion of 5 to 200g/25mm2The content of (B) is evaluated as "○" in the range of 5 to 200g/25mm2The value outside the range of (1) was evaluated as "×". The measurement values are shown in Table 2 together with the results.
[ Heat resistance evaluation ]
The metal film of the wafer with the back metal film prepared above was bonded to the film-like adhesive surface of the dicing tape-integrated film-like adhesive prepared above, and bonding was performed at a bonding speed of 10 mm/min and a bonding temperature of 70 ℃ using a wafer mounter (manufactured by ritong corporation) MA-3000III, and then, dicing was performed using a dicing saw to obtain a chip with a film-like adhesive of 5 × 5mm, and then, chip mounting was performed using a die bonder and a copper lead frame (product name: QFN32,64), under conditions of a temperature of 150 ℃, a holding time of 0.5 second, and a pressure of 0.5mpa, and then, the chip mounting was performed at 140 ℃ for 1 hour, and then, the film-like adhesive was thermally cured by heating at 260 ℃ for 5 hours, and then, the sealing resin was sealed by using a sealing resin (manufactured by hitachi chemical corporation, GE7470), and then, the sealing resin was cured by heating at 175 ℃ for 5 hours, and then, dicing was performed to obtain a package of 8mm 8 × 8 mm.
10 of the packages prepared above were subjected to 1000 cycles of thermal cycle test at-55 to 125 ℃. The test was carried out according to JEDEC Standard 22-A104C, condition B.
After the heat cycle, the package was observed with an ultrasonic microscope, and the case where peeling was observed in only 1 chip was evaluated as ×, and the case where peeling was not observed in all of 10 chips was evaluated as ○, the results are shown in table 2.
Figure BDA0002472562410000291
Reference numerals
1 base material
2 adhesive layer
3. 3' film-like adhesive
4 semiconductor wafer
5 semiconductor chip
6 adherend
7 bonding wire
8 sealing resin
10. 12-piece dicing tape-integrated film-like adhesive
11 dicing tape

Claims (8)

1. A film-like adhesive for semiconductor devices, characterized by containing a thermosetting resin, a curing agent and conductive particles, having a glass transition temperature of 130 ℃ or higher after heat curing and a specific resistance of 1 × 10 at 25 ℃ after heat curing-2The concentration of the carbon dioxide is less than omega m,
the film-like adhesive for semiconductor devices contains a thermoplastic resin,
the weight ratio (A)/(B) is in the range of 1/9-4/6, where A represents the weight of the thermoplastic resin and B represents the total weight of the thermosetting resin and the curing agent
The total content of the thermoplastic resin and the thermosetting resin is 5 to 60 wt% based on the whole film-shaped adhesive,
the case of containing a phenoxy resin is not included.
2. The film-like adhesive as claimed in claim 1, wherein the content of the conductive particles is 30 to 95 wt% based on the entire film-like adhesive.
3. The film-like adhesive as claimed in claim 1, wherein the tensile storage elastic modulus at 175 ℃ after heat curing is 50 to 1500 MPa.
4. The film-like adhesive as claimed in claim 1, wherein the shear adhesion to copper at 150 ℃ after holding at 150 ℃ for 0.5 second and 0.5MPa is 5 to 200g/25mm2Within the range of (1).
5. A film-like adhesive as claimed in any one of claims 1 to 4, which has a thickness in the range of 5 to 100 μm.
6. A dicing tape-integrated film-like adhesive comprising a dicing tape having a substrate and a pressure-sensitive adhesive layer laminated thereon and the film-like adhesive of claim 1, wherein the film-like adhesive is formed on the pressure-sensitive adhesive layer.
7. The dicing tape-integrated film-like adhesive according to claim 6, wherein a peeling force between the film-like adhesive and the dicing tape is in a range of 0.01 to 3.00N/20mm under a peeling speed of 300 mm/min, a peeling temperature of 25 ℃ and T-shaped peeling.
8. A method for manufacturing a semiconductor device using the dicing tape-integrated film-like adhesive according to claim 6 or 7, comprising:
a step A of adhering a semiconductor wafer to the film-like adhesive of the dicing tape-integrated film-like adhesive;
a step B of dicing the semiconductor wafer together with the film-like adhesive;
a step C of picking up the semiconductor element with the film-like adhesive obtained by dicing;
a step D of bringing the semiconductor element with the film-like adhesive into contact with an adherend and then holding the film-like adhesive at a temperature of 50 to 150 ℃, for 0.01 to 2 seconds, and at a pressure of 0.05 to 40 MPa; and
and a step E of heat-curing the film-like adhesive after the step D.
CN202010353163.3A 2013-04-30 2014-03-31 Film-like adhesive, dicing tape-integrated film-like adhesive, and method for manufacturing semiconductor device Pending CN111500212A (en)

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Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160106625A (en) * 2014-01-08 2016-09-12 닛토덴코 가부시키가이샤 Film-like adhesive, dicing tape with film-like adhesive, method for manufacturung semiconductor device, and semiconductor device
JP2015129226A (en) * 2014-01-08 2015-07-16 日東電工株式会社 Film type adhesive, dicing tape with film type adhesive, method for manufacturing semiconductor device, and semiconductor device
JP6396189B2 (en) * 2014-11-27 2018-09-26 日東電工株式会社 Conductive film adhesive, dicing tape with film adhesive, and method for manufacturing semiconductor device
US20180047588A1 (en) * 2015-05-04 2018-02-15 Eoplex Limited Lead carrier structure and packages formed therefrom without die attach pads
JP6967839B2 (en) 2016-03-23 2021-11-17 日東電工株式会社 Heat bonding sheet, heat bonding sheet with dicing tape, manufacturing method of bonded body, power semiconductor device
KR102313586B1 (en) * 2016-03-30 2021-10-15 린텍 가부시키가이샤 Sheet for semiconductor processing
US20200048504A1 (en) * 2017-03-29 2020-02-13 Nitto Denko Corporation Thermal-bonding sheet and thermal-bonding sheet-attached dicing tape
JP6615150B2 (en) * 2017-05-01 2019-12-04 古河電気工業株式会社 Adhesive film, semiconductor wafer processing tape, semiconductor package, and manufacturing method thereof
CN110622302B (en) * 2017-05-17 2022-11-22 琳得科株式会社 Semiconductor device and method for manufacturing the same
CN111344813B (en) * 2017-11-13 2023-02-28 日东电工株式会社 Composition for sinter bonding, sheet for sinter bonding, and dicing tape with sheet for sinter bonding
JP6584543B2 (en) * 2018-01-23 2019-10-02 田中貴金属工業株式会社 Conductive adhesive composition
JP7139041B2 (en) * 2018-05-14 2022-09-20 株式会社ディスコ Wafer processing method
JP7139042B2 (en) * 2018-05-14 2022-09-20 株式会社ディスコ Wafer processing method
JP7139040B2 (en) * 2018-05-14 2022-09-20 株式会社ディスコ Wafer processing method
JP7413804B2 (en) * 2020-02-03 2024-01-16 三菱ケミカル株式会社 Adhesive composition, adhesive, adhesive sheet, and laminate
WO2022138455A1 (en) * 2020-12-25 2022-06-30 昭和電工マテリアルズ株式会社 Film-like adhesive and manufacturing method therefor, dicing/die attach film, and semiconductor device and manufacturing method therefor
TW202402972A (en) * 2022-07-08 2024-01-16 日商納美仕有限公司 Conductive paste, electric circuit, flexible electric circuit body and method for manufacturing molded body

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0333734A1 (en) * 1986-11-13 1989-09-27 M & T Chemicals, Inc. Attachment of semiconductor die to lead frame by means of an adhesive resin
JPH08315885A (en) * 1995-05-16 1996-11-29 Hitachi Chem Co Ltd Circuit connecting material
US5718789A (en) * 1995-06-07 1998-02-17 The Dexter Corporation Method for making a debossed conductive film composite
JP2007277522A (en) * 2006-03-13 2007-10-25 Hitachi Chem Co Ltd Electroconductive adhesive film, adhesive sheet using this, and semiconductor device
CN101617395A (en) * 2007-03-01 2009-12-30 日东电工株式会社 Thermosetting die-bonding film
US20100029059A1 (en) * 2008-08-01 2010-02-04 Takeshi Matsumura Dicing die-bonding film
CN102222633A (en) * 2010-04-16 2011-10-19 日东电工株式会社 Thermosetting die bond film, dicing die bond film and method for manufacturing semiconductor device
JP2012215651A (en) * 2011-03-31 2012-11-08 Canon Inc Imaging apparatus
JP2013028717A (en) * 2011-07-28 2013-02-07 Nitto Denko Corp Film adhesive

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3288146B2 (en) 1992-09-16 2002-06-04 日立化成工業株式会社 Conductive adhesive film, bonding method, support member with conductive adhesive film, and semiconductor device
JP4137827B2 (en) 2004-03-23 2008-08-20 住友ベークライト株式会社 Conductive adhesive film and semiconductor device using the same
KR101856557B1 (en) * 2011-03-16 2018-05-10 후루카와 덴키 고교 가부시키가이샤 Highly heat conductive film-shaped adhesive composition, highly heat conductive film-shaped adhesive and method for producing semiconductor package by using the highly heat conductive film-shaped adhesive
JP2012216651A (en) * 2011-03-31 2012-11-08 Sumitomo Bakelite Co Ltd Semiconductor device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0333734A1 (en) * 1986-11-13 1989-09-27 M & T Chemicals, Inc. Attachment of semiconductor die to lead frame by means of an adhesive resin
JPH08315885A (en) * 1995-05-16 1996-11-29 Hitachi Chem Co Ltd Circuit connecting material
US5718789A (en) * 1995-06-07 1998-02-17 The Dexter Corporation Method for making a debossed conductive film composite
JP2007277522A (en) * 2006-03-13 2007-10-25 Hitachi Chem Co Ltd Electroconductive adhesive film, adhesive sheet using this, and semiconductor device
CN101617395A (en) * 2007-03-01 2009-12-30 日东电工株式会社 Thermosetting die-bonding film
US20100029059A1 (en) * 2008-08-01 2010-02-04 Takeshi Matsumura Dicing die-bonding film
CN102222633A (en) * 2010-04-16 2011-10-19 日东电工株式会社 Thermosetting die bond film, dicing die bond film and method for manufacturing semiconductor device
JP2012215651A (en) * 2011-03-31 2012-11-08 Canon Inc Imaging apparatus
JP2013028717A (en) * 2011-07-28 2013-02-07 Nitto Denko Corp Film adhesive

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
雷芝红等: "微电子封装用导电胶的研究进展", 《微纳电子技术》 *

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