TWI734873B - Split device - Google Patents
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- TWI734873B TWI734873B TW106142561A TW106142561A TWI734873B TW I734873 B TWI734873 B TW I734873B TW 106142561 A TW106142561 A TW 106142561A TW 106142561 A TW106142561 A TW 106142561A TW I734873 B TWI734873 B TW I734873B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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Abstract
[課題]在不使晶片之拾取性惡化的情形下,確實地分割晶圓。 [解決手段]一種分割裝置,是將透過膠帶而被支持於環狀框架上之晶圓,藉由膠帶之擴張而以改質層為起點來分割晶圓,該分割裝置是形成為具備工作台、框架保持設備、升降設備、控制設備,及收縮設備之構成,該工作台是隔著膠帶來保持晶圓,該框架保持設備是保持晶圓之周圍的環狀框架,該升降設備是使該工作台與該框架保持設備相對地接近及遠離,該控制設備是控制升降設備,以在晶圓的分割之後將晶片的間隔形成為預先設定之間隔,該收縮設備是以將晶片之間隔維持於預先設定之間隔的狀態,來使晶圓的外周與環狀框架的內周之間的已鬆弛之膠帶收縮而將晶片之間隔固定。[Problem] Dividing the wafer reliably without deteriorating the pick-up of the wafer. [Solution] A dicing device is to divide the wafer supported on the ring frame through the tape through the expansion of the tape and start from the modified layer. The dicing device is formed with a table , Frame holding equipment, lifting equipment, control equipment, and shrinking equipment, the workbench is to hold the wafer through the tape, the frame holding equipment is to hold the ring frame around the wafer, the lifting equipment is to make the The table and the frame holding device are relatively close to and away from each other. The control device controls the lifting device to form a predetermined interval between the wafers after the wafer is divided. The shrinking device maintains the gap between the wafers at The state of the predetermined interval is used to shrink the loosened tape between the outer periphery of the wafer and the inner periphery of the ring frame to fix the interval between the wafers.
Description
本發明是有關於一種將晶圓分割成一個個的晶片的分割裝置。 The present invention relates to a dividing device for dividing a wafer into individual wafers.
以往,作為此種分割裝置而已知的是下述之分割裝置:將透過膠帶而被支持於環狀框架上之晶圓,藉由擴張膠帶,而沿著已形成於晶圓之分割起點來進行分割之裝置(參照例如專利文獻1-3)。在這些分割裝置中,是將晶圓保持於分割工作台上,並使環狀框架保持於環狀工作台上,且相對於環狀框架將晶圓相對地上推,藉此將膠帶朝徑方向擴張而將晶圓分割成一個個的晶片。分割後的晶片是在下一個步驟中,藉由拾取器(picker)等而從膠帶上被拾取。 In the past, known as such a dividing device is the following dividing device: the wafer supported on the ring frame through the tape is expanded along the starting point of the wafer that has been formed by the tape. Dividing device (see, for example, Patent Documents 1-3). In these dividing devices, the wafer is held on the dividing table, the ring frame is held on the ring table, and the wafer is pushed up relative to the ring frame, thereby moving the tape in the radial direction Divide the wafer into individual wafers by expanding. The divided wafer is picked up from the tape by a picker or the like in the next step.
專利文獻1:日本專利特開2016-004832號公報 Patent Document 1: Japanese Patent Laid-Open No. 2016-004832
專利文獻2:日本專利特開2007-027250號公報 Patent Document 2: Japanese Patent Laid-Open No. 2007-027250
專利文獻3:日本專利特開2015-204362號公報 Patent Document 3: Japanese Patent Laid-Open No. 2015-204362
然而,為了分割晶片尺寸為較小之晶圓,必須將膠帶擴張得較大。當將膠帶擴張得較大時,會因晶片彼此之間隔過寬,而在下一個步驟中變得無法拾取晶片、或拾取時間變長。另一方面,雖然也考慮藉由抑制膠帶之擴張來縮小晶片彼此之間隔,以提升晶片的拾取性,但會無法適當地分割晶片尺寸為較小的晶圓。如此,出現了下述問題:當膠帶擴張得較大時,會在拾取上產生不良狀況,若抑制膠帶之擴張時,會無法適當地分割晶圓。 However, in order to divide the wafer size into smaller wafers, the tape must be expanded larger. When the tape is expanded larger, the distance between the wafers is too wide, and it becomes impossible to pick up the wafers in the next step, or the picking time becomes longer. On the other hand, although it is also considered to reduce the gap between the wafers by suppressing the expansion of the tape to improve the pick-up of the wafers, it may not be possible to appropriately divide wafers with smaller wafer sizes. In this way, the following problem has arisen: When the tape expands greatly, it will cause a problem in picking, and if the expansion of the tape is suppressed, the wafer cannot be properly divided.
本發明是有鑒於所述問題點而作成的發明,其目的之一在於提供一種分割裝置,該分割裝置可以在不使晶片的拾取性惡化的情形下,確實地分割晶圓。 The present invention was made in view of the above-mentioned problems, and one of its objects is to provide a dividing device that can reliably divide a wafer without deteriorating the pick-up properties of the wafer.
本發明之一態樣的分割裝置,是將形成有分割起點之晶圓貼附於將環狀框架之開口堵塞而貼附之膠帶上,而使該環狀框架、該膠帶與晶圓一體化而成之工件組(work set)的該膠帶進行擴張,而以該分割起點作為起點來分割晶圓,該分割裝置具備:框架保持設備,保持該環狀框架;工作台,具有保持面,該保持面是隔著該框架保持設備所保持之工件組的該膠帶來保持晶圓;升降設備,使該工作台與該框架保持設備在相對於該保持面正交的方向上相對地接近及遠離; 控制設備,使該工作台與該框架保持設備朝相遠離之方向移動而擴張該膠帶,且以該分割起點為起點來分割晶圓之後,使該工作台與該框架保持設備朝相接近之方向移動而使相鄰之晶片靠近,並形成預先設定之縮窄的間隔;及收縮設備,藉由該控制設備而形成該間隔,並以該保持面吸引保持已擴張之該膠帶而維持該間隔,且使該工作台與該框架保持設備更加接近,並使晶圓的外周與環狀框架的內周之間的已鬆弛的該膠帶收縮,而將相鄰之晶片的間隔固定。 In one aspect of the dividing device of the present invention, a wafer formed with a dividing starting point is attached to a tape that blocks the opening of a ring frame to be attached, so that the ring frame, the tape and the wafer are integrated The tape of the resultant work set is expanded, and the wafer is divided using the starting point of division as a starting point. The division device includes: a frame holding device for holding the ring frame; The holding surface is to hold the wafer through the tape of the workpiece group held by the frame holding device; the lifting device makes the table and the frame holding device relatively approach and move away from each other in a direction orthogonal to the holding surface ; The control device moves the workbench and the frame holding device in a direction away from each other to expand the tape, and after dividing the wafer with the starting point of division as a starting point, make the workbench and the frame holding device move in the direction of approaching each other Move adjacent chips to approach and form a preset narrowing interval; and a shrinking device, by which the control device forms the interval, and the holding surface attracts and maintains the expanded tape to maintain the interval, And make the workbench and the frame holding device closer, and shrink the loosened tape between the outer circumference of the wafer and the inner circumference of the ring frame, and fix the interval between adjacent wafers.
根據此構成,在晶圓之分割時,是藉由使工作台與框架保持設備相遠離,而使膠帶擴張得較大,並以分割起點為起點來確實地分割晶圓。在晶圓的分割之後,是藉由使工作台與框架保持設備接近,來解除膠帶之擴張而將相鄰的晶片之間隔縮窄。並且,在相鄰的晶片之間隔已縮窄至預先設定的間隔之狀態下,可藉由去除晶圓之周圍的膠帶之鬆弛,來將晶片的間隔固定。據此,不會有在晶片的拾取位置上產生分散不均、或拾取時間變長之情形。如此一來,不會使晶片的拾取性惡化,且可以確實地分割晶圓。 According to this configuration, when the wafer is divided, the table is separated from the frame holding device, so that the tape expands greatly, and the wafer is reliably divided from the starting point of the division. After the wafer is divided, the workbench is brought close to the frame holding device to release the expansion of the tape and narrow the distance between adjacent wafers. In addition, in a state where the interval between adjacent chips has been narrowed to a predetermined interval, the gap between the chips can be fixed by removing the slack of the tape around the wafer. According to this, there is no possibility that uneven dispersion occurs in the pickup position of the wafer, or the pickup time becomes longer. In this way, the pick-up performance of the wafer is not deteriorated, and the wafer can be reliably divided.
根據本發明,可在晶圓的分割之後將膠帶之擴張放鬆,並且去除晶圓之周圍的膠帶之鬆弛,以將相鄰的晶片之間隔固定在預先設定之間隔。據此,可以在不使 晶片的拾取性惡化的情形下,確實地分割晶圓。 According to the present invention, the tape can be expanded and relaxed after the wafer is divided, and the slack of the tape around the wafer can be removed, so that the interval between adjacent wafers can be fixed at a predetermined interval. According to this, you can use When the pick-up of the wafer deteriorates, the wafer is surely divided.
1、61:分割裝置 1.61: Dividing device
10:工作台 10: Workbench
11:支柱部 11: Pillar
12:多孔板 12: Perforated plate
13:保持面 13: Keep the noodles
14:開關閥 14: On-off valve
15:滾輪部 15: Roller part
16:吸引源 16: Attraction source
20:框架保持設備 20: Frame holding equipment
21:載置工作台 21: Place the workbench
22:蓋板 22: cover
23、24:圓形開口 23, 24: round opening
26:升降設備 26: Lifting equipment
27:汽缸桿 27: cylinder rod
30:收縮設備 30: Shrinking equipment
31:旋繞臂 31: Spiral arm
32:加熱器 32: heater
33:上下動作部 33: Up and down movement part
34:旋轉馬達 34: Rotating motor
40:控制設備 40: control equipment
45:外周拍攝設備 45: peripheral shooting equipment
46:計算設備 46: Computing equipment
48:拍攝設備 48: shooting equipment
49:測量設備 49: measuring equipment
65:拾取器 65: Pickup
F:環狀框架 F: ring frame
T:膠帶 T: Tape
C:晶片 C: chip
W:晶圓 W: Wafer
WS:工件組 WS: Workpiece group
L:分割預定線 L: Pre-divided line
D1、D2:外徑 D1, D2: outer diameter
S1、S2:間隔 S1, S2: interval
P1、P2:外周位置 P1, P2: outer peripheral position
R:容許範圍 R: allowable range
圖1是本實施形態之分割裝置的立體圖。 Fig. 1 is a perspective view of the dividing device of this embodiment.
圖2是比較例之晶圓的分割動作及拾取動作之說明圖。 Fig. 2 is an explanatory diagram of a wafer dividing operation and a picking operation in a comparative example.
圖3A-圖3D是顯示本實施形態之晶片間隔的調整處理之圖。 3A to 3D are diagrams showing the adjustment process of the wafer spacing in this embodiment.
圖4A-圖4D是由本實施形態之分割裝置進行的分割動作的說明圖。 4A to 4D are explanatory diagrams of the dividing operation performed by the dividing device of this embodiment.
圖5A-圖5B是顯示變形例之晶片間隔的調整處理之圖。 5A to 5B are diagrams showing the adjustment process of the wafer gap in a modification example.
以下,參照附加圖式,說明本實施形態的分割裝置。圖1是本實施形態之分割裝置的立體圖。圖2是比較例之晶圓的分割動作及拾取動作之說明圖。再者,分割裝置並不限定於圖1所記載之構成,而是可進行適當變更的。 Hereinafter, the dividing device of this embodiment will be described with reference to the attached drawings. Fig. 1 is a perspective view of the dividing device of this embodiment. Fig. 2 is an explanatory diagram of a wafer dividing operation and a picking operation in a comparative example. In addition, the dividing device is not limited to the configuration described in FIG. 1, but can be appropriately changed.
如圖1所示,分割裝置1是構成為:將透過膠帶T而被支持在環狀框架F上之晶圓W,藉由膠帶T之擴張來分割成一個個的晶片C(參照圖3A)。又,分割裝置1是構成為:當解除膠帶T之擴張時,藉由熱收縮(heat shrink)來去除發生在晶圓W的外周與環狀框架F的內周之間的膠帶T之鬆弛。如此,僅對膠帶T被拉伸而鬆弛之處進行熱收縮,來維持晶片C之間隔,以免晶圓W分割後的晶片C彼此 相接觸而破損。 As shown in FIG. 1, the dividing device 1 is configured to divide the wafer W supported on the ring frame F through the tape T into individual wafers C by the expansion of the tape T (refer to FIG. 3A) . In addition, the dividing device 1 is configured to remove the slack of the tape T occurring between the outer periphery of the wafer W and the inner periphery of the ring frame F by heat shrink when the expansion of the tape T is released. In this way, only the place where the tape T is stretched and slack is thermally shrunk to maintain the gap between the wafers C so as to prevent the wafers C from each other after the wafer W is divided. Damaged by contact.
在晶圓W之正面設置有格子狀之分割預定線L,並在由分割預定線L所區劃出的各區域中,形成有各種器件(圖未示)。再者,晶圓W也可以是在矽,砷化鎵等半導體基板上形成有IC,LSI等器件的半導體晶圓,也可以是在陶瓷,玻璃,藍寶石系的無機材料基板上形成有LED等光器件的光器件晶圓。晶圓W是貼附在已被貼附於環狀框架F的膠帶T上,且是將已使晶圓W、環狀框架F與膠帶T一體化而成之工件組WS搬入分割裝置1。 A grid-shaped planned dividing line L is provided on the front surface of the wafer W, and various devices (not shown) are formed in each area delimited by the planned dividing line L. Furthermore, the wafer W may also be a semiconductor wafer in which IC, LSI and other devices are formed on a semiconductor substrate such as silicon and gallium arsenide, or it may be a ceramic, glass, or sapphire-based inorganic material substrate formed with LEDs, etc. Optical device wafer. The wafer W is attached to the tape T that has been attached to the ring frame F, and the workpiece group WS in which the wafer W, the ring frame F, and the tape T are integrated is carried into the dividing device 1.
工件組WS之環狀框架F是藉由具有熱收縮性的膠帶T來將開口部堵塞,且在開口部之內側的膠帶T上貼附有晶圓W。在晶圓W的內部,形成有沿著分割預定線L之作為分割起點的改質層(圖未示)。再者,改質層是指藉由雷射的照射而使得晶圓W內部的密度、折射率、機械性強度和其他物理特性變得與周圍不同的狀態,且導致強度也比周圍低的區域。改質層亦可為例如,熔融處理區域、裂痕(crack)區域、絕緣破壞區域、折射率變化區域,也可以是混合了這些區域的區域。 The ring frame F of the workpiece group WS has the opening part closed by the tape T having heat shrinkability, and the wafer W is attached to the tape T inside the opening part. Inside the wafer W, a modified layer (not shown) is formed along the planned dividing line L as a starting point for dividing. Furthermore, the modified layer refers to an area where the density, refractive index, mechanical strength, and other physical properties inside the wafer W become different from the surroundings by laser irradiation, and the intensity is also lower than the surroundings. . The modified layer may be, for example, a melt-processed area, a cracked area, a dielectric breakdown area, or a refractive index change area, or a mixed area of these areas.
又,在以下之說明中,雖然作為分割起點而以形成於晶圓W之內部的改質層來例示說明,但並不限定於此構成。分割起點只要是可成為晶圓W的分割時的起點即可,以例如雷射加工溝、切割溝、刻劃線(scribe line)來構成亦可。此外,膠帶T只要是具有伸縮性並且具有熱收縮性的膠帶即可,而不特別限定材質。再者,膠帶基材 宜以例如聚烯烴(Polyolefin,PO)、聚氯乙烯(Polyvinyl Chloride,PVC)來形成。 In addition, in the following description, although the modified layer formed in the inside of the wafer W is exemplified as the starting point of the division, it is not limited to this configuration. The starting point of division may be a starting point when the wafer W is divided, and it may be constituted by, for example, a laser processing groove, a dicing groove, or a scribe line. In addition, the material of the tape T is not particularly limited as long as it has stretchability and heat shrinkability. Furthermore, the tape substrate Preferably, it is formed from, for example, polyolefin (PO) or polyvinyl chloride (PVC).
在分割裝置1上配置有工作台10,該工作台10可隔著工件組WS之膠帶T來吸引保持晶圓W,且在工作台10之周圍配置有保持工件組WS之環狀框架F的框架保持設備20。工作台10是由複數個支柱部11所支持,且在工作台10之上表面配置有多孔質之多孔板12。藉由此多孔質之多孔板12,而在工作台10的上表面形成有吸引保持晶圓W之保持面13。在保持面13上,是通過工作台10內之流路而連接於吸引源16(參照圖4A),並藉由於保持面13產生之負壓來吸引保持晶圓W。
The dividing device 1 is provided with a table 10 that can suck and hold the wafer W through the tape T of the workpiece group WS, and a ring frame F that holds the workpiece group WS is arranged around the table 10
又,從保持面13連通到吸引源16的流路上設有開關閥14(參照圖4A),並可藉由開關閥14來切換保持面13對晶圓W的吸引保持與吸引解除。在工作台10之外周邊緣,涵蓋全周而可旋轉地設有複數個滾輪部15。複數個滾輪部15可在已將晶圓W保持於保持面13之狀態下,從下側旋轉接觸於晶圓W之周圍的膠帶T。藉由複數個滾輪部15旋轉接觸於膠帶T,可抑制在膠帶T之擴張時在工作台10之外周邊緣產生的膠帶T之磨擦。
In addition, an on-off valve 14 (see FIG. 4A) is provided in the flow path communicating from the holding
框架保持設備20是形成以蓋板(cover plate)22從上方將載置工作台21上之環狀框架F夾入,以將環狀框架F保持於載置工作台21上。在載置工作台21及蓋板22之中央,分別形成有直徑比工作台10更大的圓形開口23、24。當已將蓋板22覆蓋於載置工作台21上時,是藉
由蓋板22與載置工作台21來保持環狀框架F,並且從載置工作台21及蓋板22之圓形開口23、24,將晶圓W與膠帶T之一部分露出於外部。
The
框架保持設備20是在已將蓋板22覆蓋於載置工作台21上之環狀框架F的狀態下,藉由例如圖未示之夾具部來將蓋板22固定於載置工作台21。框架保持設備20是被支持於升降設備26上,該升降設備26是使工作台10與框架保持設備20在相對於保持面13正交之方向上相對地遠離及接近。升降設備26是以4個電動汽缸所構成,該等4個電動汽缸是支持載置工作台21之四個角落。藉由控制升降設備26之汽缸桿27的突出量,可調節工作台10上之晶圓W與框架保持設備20之距離。
The
在框架保持設備20之上方設置有收縮設備30,該收縮設備30是用以使於膠帶T產生之鬆弛收縮。收縮設備30是設置於晶圓W之中心軸上,且以包夾晶圓W之中心而相向的方式在旋繞臂31之兩端配置有一對加熱器32。加熱器32是構成為例如將遠紅線進行點(spot)照射,且該遠外線是將難以被金屬材料吸收之3μm~25μm設為峰值波形。藉此,可抑制裝置各部分之加熱,而將晶圓W的外周與環狀框架F的內周之間的膠帶T之鬆弛部分地加熱來進行熱收縮。
A shrinking
又,於收縮設備30之旋繞臂31上設置有上下動作部33及旋轉馬達34,該上下動作部33是使一對加熱器32上下移動,該旋轉馬達34是使一對加熱器32繞著晶圓W
之中心軸地旋轉。上下動作部33是配合框架保持設備20之升降動作,來調整一對加熱器32對膠帶T之高度。旋轉馬達34是使一對加熱器32旋繞,以涵蓋全周而加熱晶圓W的周圍的膠帶T之鬆弛。可藉由上下動作部33及旋轉馬達34,將一對加熱器32相對於膠帶T適當地定位,藉此良好地加熱晶圓W之周圍的膠帶T。
In addition, the revolving
又,在分割裝置1中設置有統合控制裝置各部的控制設備40。控制設備40是以執行各種處理的處理器及記憶體等所構成。記憶體是因應用途而由ROM(唯讀記憶體(Read Only Memory))、RAM(隨機存取記憶體(Random Access Memory))等的一個或複數個儲存媒體所構成。可藉由控制設備40將工作台10與框架保持設備20相對移動而控制膠帶T之擴張動作,並且以收縮設備30之一對加熱器32來去除膠帶T之鬆弛以控制膠帶T之收縮動作。此外,可藉由控制設備40控制後述之晶片間隔的調整處理。
In addition, the dividing device 1 is provided with a
在如此之分割裝置1中,是將框架保持設備20以已保持環狀框架F的狀態來進行下降,藉此將工作台10從蓋板22及載置工作台21的圓形開口23、24突出。藉由相對於框架保持設備20來將工作台10相對地上推,可朝徑方向擴張膠帶T而將晶圓W分割成一個個的晶片C。又,當將框架保持設備20上升而解除膠帶T之擴張時,會放鬆膠帶T的張力。此時,可藉由加熱器32將膠帶T加熱而進行熱收縮,以免晶圓W之周圍的膠帶T鬆弛。
In such a dividing device 1, the
另外,如圖2所示,在一般的分割裝置61中,每當分割晶圓W時,均會於晶片C之間隔產生分散不均,且必須在下一個步驟中以拾取器65來拾取晶片C時,辨識晶片C的位置。又,為了分割晶片尺寸為較小的晶圓W,必須將膠帶T擴張得較大,以免晶片C彼此相擦撞而破損,而使以拾取器65拾取晶片C時的移動距離變長,並增加拾取時間。此外,當將晶片C定位在拾取器65的移動範圍外時,會無法拾取晶片C。
In addition, as shown in FIG. 2, in a
於是,在本實施形態的分割裝置1(參照圖1)中,是在使膠帶T擴張得較大而將晶圓W分割成一個個的晶片C之後,放鬆膠帶T以將相鄰的晶片C之間隔形成為預先設定之間隔。在此情況下,一邊藉由已設置在工作台10的上方之外周拍攝設備45來拍攝分割後之晶圓W的外周,一邊使拍攝圖像之晶圓W的外周位置與規定之外周位置一致,來調整晶片C之間隔。並且,藉由熱收縮來去除晶圓W之周圍的膠帶T之鬆弛,以形成為將相鄰之晶片C以適合於拾取動作之間隔來固定。
Therefore, in the dividing device 1 (refer to FIG. 1) of the present embodiment, after the tape T is expanded to divide the wafer W into individual wafers C, the tape T is relaxed to separate the adjacent wafers C. The interval is formed as a preset interval. In this case, while imaging the outer periphery of the divided wafer W by the outer
以下,參照圖3,來說明由控制設備進行的晶片間隔的調整處理。圖3是顯示本實施形態之晶片間隔的調整處理之圖。 Hereinafter, referring to FIG. 3, the wafer gap adjustment processing performed by the control device will be described. Fig. 3 is a diagram showing the adjustment process of the wafer interval in the present embodiment.
如圖3A所示,當相對於框架保持設備20來將工作台10相對地上推時,會擴張膠帶T而將晶圓W分割成一個個的晶片C。藉由將分割後之晶圓W擴展至外徑D1,可在相鄰之晶片C之間形成間隔S1。在晶圓W之分割後,
是將框架保持設備20靠近於工作台10來解除膠帶T之擴張。藉此,藉由膠帶T之彈性回復而使分割後之晶圓W的外徑開始變小,且相鄰之晶片C逐漸地靠近,而將相鄰之晶片C的間隔縮窄。
As shown in FIG. 3A, when the table 10 is pushed up relative to the
此時,在工作台10之上方,設置有外周拍攝設備45,並藉由外周拍攝設備45來拍攝分割後之晶圓W的外周。外周拍攝設備45是連接於控制設備40,並從外周拍攝設備45將晶圓W之外周的拍攝圖像輸入到控制設備40。在控制設備40中,是相對於拍攝圖像來施行邊緣檢測處理等之各種圖像處理,並從拍攝圖像之亮度差等來檢測晶圓W之外周位置。如上所述,在晶圓W之分割時可擴張膠帶T,並可藉由外周拍攝設備45檢測外周位置P1來作為晶圓W之外周位置。
At this time, above the table 10, a
如圖3B所示,當藉由框架保持設備20相對於工作台10之接近,而將以外周拍攝設備45所拍攝之晶圓W之外周移動至外周位置P2時,可將膠帶T吸引保持於工作台10之保持面13上來維持晶片C之間隔。此時,晶圓W縮窄至外徑D2,並可在相鄰的晶片C之間形成預先設定之間隔S2。再者,間隔S2是適合於下一個步驟之拾取動作的間隔。如此,以外周拍攝設備45來監控(monitor)因應於相鄰的晶片C之間隔而變化的晶圓W之外周位置,並且一邊間接地測量晶片C之間隔一邊調整晶片C之間隔。
As shown in FIG. 3B, when the outer periphery of the wafer W photographed by the outer
再者,如圖3C所示,晶圓W之外周位置P2是藉由連接於控制設備40(參照圖3B)之計算設備46(參照
圖1)而事先被計算。更詳細地說,是藉由晶圓W之晶片尺寸而決定晶圓W之分割預定線的數量,且僅以分割預定線之數量,來計算將晶片C擴展至間隔S2時的晶圓W的外徑D2。可根據此晶圓W之外徑D2來計算晶圓W之對應於晶片C的間隔S2之外周位置P2。再者,計算設備46是與控制設備40同樣地由實行各種處理之處理器或記憶體等所構成。
Furthermore, as shown in FIG. 3C, the outer peripheral position P2 of the wafer W is connected to the computing device 46 (refer to FIG. 3B) connected to the control device 40 (see FIG. 3B).
Figure 1) and calculated in advance. In more detail, the number of planned dividing lines of wafer W is determined by the wafer size of wafer W, and only the number of planned dividing lines is used to calculate the ratio of wafer W when chip C is expanded to interval S2. Outer diameter D2. The outer peripheral position P2 of the interval S2 of the wafer W corresponding to the wafer C can be calculated according to the outer diameter D2 of the wafer W. In addition, the
又,如圖3D所示,在晶圓W之外周位置P2設定如一點鏈線所示之容許範圍R亦可。在此情況下,當藉由框架保持設備20相對於工作台10之接近,而使以外周拍攝設備45所拍攝之晶圓W的外周處於容許範圍R內時,會判斷為相鄰之晶片C的間隔與預先設定之間隔S2一致。當如此進行而調整晶片C之間隔時,是藉由熱收縮來去除晶圓W的周圍之膠帶T的鬆弛,藉此可將晶片C以維持在預先設定之間隔S2的狀態來固定。
Furthermore, as shown in FIG. 3D, the allowable range R shown by a dotted chain line may be set at the outer peripheral position P2 of the wafer W. In this case, when the outer periphery of the wafer W photographed by the outer
接著,參照圖4,來說明關於由本實施形態之分割裝置所進行的分割動作。圖4是由本實施形態之分割裝置進行的分割動作的說明圖。各自顯示的是,圖4A是分割步驟之一例,圖4B是晶片間隔調整步驟之一例,圖4C是膠帶吸引保持步驟之一例,圖4D是膠帶收縮步驟之一例。 Next, referring to FIG. 4, the division operation performed by the division device of this embodiment will be described. Fig. 4 is an explanatory diagram of the dividing operation performed by the dividing device of the present embodiment. Each shows that FIG. 4A is an example of a dividing step, FIG. 4B is an example of a wafer gap adjustment step, FIG. 4C is an example of a tape suction and holding step, and FIG. 4D is an example of a tape shrinking step.
如圖4A所示,首先可實施分割步驟。在分割步驟中,是隔著膠帶T將晶圓W載置於工作台10上,且將晶圓W之周圍的環狀框架F保持於框架保持設備20。此
時,關閉開關閥14,而將來自吸引源16之對工作台10的吸引力遮斷。並且,藉由控制設備40之控制來將框架保持設備20降下,並使工作台10與框架保持設備20相遠離。藉此,朝放射方向擴張膠帶T,並且透過膠帶T以強度已降低之改質層作為起點來將晶圓W分割成一個個的晶片C。
As shown in Figure 4A, the segmentation step can be implemented first. In the dividing step, the wafer W is placed on the table 10 via the tape T, and the ring frame F around the wafer W is held by the
如圖4B所示,可在分割步驟之後實施晶片間隔調整步驟。在晶片間隔調整步驟中,是藉由控制設備40之控制,而使框架保持設備20上升,並使工作台10與框架保持設備20相接近。藉此,可解除膠帶T之擴張,並藉由膠帶T之彈性回復來使相鄰的晶片C逐漸地靠近。此時,將外周拍攝設備45定位在工作台10之上方,並藉由外周拍攝設備45來拍攝已分割之晶圓W的外周。可從此拍攝圖像中檢測晶圓W的外周位置,並與藉由計算設備46(參照圖1)而預先計算出的晶圓W的外周位置進行比較。
As shown in FIG. 4B, the wafer gap adjustment step may be implemented after the dividing step. In the step of adjusting the wafer interval, the
藉由控制設備40,使工作台10與框架保持設備20接近,直到由拍攝圖像所檢測出之晶圓W的外周位置,與已預先計算之晶圓W的外周位置一致為止。可將相鄰的晶片C逐漸地靠近,而將晶片C之間隔調整成預先設定之間隔。由於在晶片C之間隔調整時是將開關閥14關閉的,因此不會有因工作台10而妨礙膠帶T之變形的情形。又,藉由工作台10與框架保持設備20之接近,可將晶圓W的外周與環狀框架F的內周之間的膠帶T之張力放鬆,而在晶圓W的周圍的膠帶T上產生鬆弛。
By the
如圖4C所示,可在晶片間隔調整步驟之後實
施膠帶吸引保持步驟。在膠帶吸引保持步驟中,當藉由控制設備40而在晶片C之間形成預先設定之間隔時,可開啟開關閥14而在工作台10上產生吸引力。由於藉由工作台10並隔著膠帶T來吸引保持晶片C,因此不會有膠帶T因彈性回復而收縮之情形,而可將相鄰之晶片C隔著預先設定之間隔來維持。又,可將收縮設備30定位於晶圓W之上方,且可藉由旋轉馬達34使一對加熱器32旋繞而開始進行膠帶T之鬆弛的熱收縮。
As shown in Figure 4C, it can be implemented after the wafer spacing adjustment step
Apply tape to attract and maintain step. In the tape suction and holding step, when a predetermined interval is formed between the wafers C by the
如圖4D所示,可在膠帶吸引保持步驟之後實施膠帶收縮步驟。在膠帶收縮步驟中,是藉由控制設備40使工作台10與框架保持設備20更加接近,藉此會產生晶圓W的外周與環狀框架F的內周之間的膠帶T的鬆弛。此時,配合框架保持設備20之移動,並一邊藉由上下動作部33來調整加熱器32的高度,一邊藉由一對加熱器32將晶圓W之周圍的膠帶T之鬆弛進行熱收縮。由於僅將晶圓W之周圍的膠帶T進行熱收縮,因此,即使解除工作台10之吸引保持,也可將相鄰之晶片C的間隔以已維持的狀態固定。
As shown in FIG. 4D, the tape shrinking step may be implemented after the tape suction and holding step. In the tape shrinking step, the
並且,在膠帶收縮步驟之後,是關閉開關閥14,並解除由工作台10進行的膠帶T的吸引,而可進行工件組WS之搬送。如此,由於在晶圓W之分割後,將相鄰之晶片C的間隔固定在預先設定之間隔,因此不會有晶片C之間隔過度變寬的情形,而可以在下一個步驟之拾取動作時,縮短拾取器之移動距離並減少拾取時間。又,由於在晶圓W之分割後不會產生晶片C之分散不均,因此可使拾
取器依照規定之動作程式作動,藉此可適當地拾取所有的晶片C。
In addition, after the tape shrinking step, the on-off
如以上,在本實施形態之分割裝置1中,是藉由在晶圓W之分割時使工作台10與框架保持設備20相遠離,而可將膠帶T擴張得較大,並以改質層為起點來確實地分割晶圓W。在晶圓W之分割後,是藉由使工作台10與框架保持設備20相接近,而可解除膠帶T之擴張,並使相鄰之晶片C的間隔縮窄。並且,在已將相鄰之晶片C的間隔縮窄至預先設定的間隔之狀態下,可藉由去除晶圓W之周圍的膠帶T的鬆弛來固定晶片C之間隔。據此,不會有在晶片C之拾取位置上產生分散不均、或拾取時間變長之情形。如此,可在不使晶片C之拾取性惡化的情形下,確實地分割晶圓W。
As described above, in the dividing apparatus 1 of the present embodiment, by separating the table 10 from the
再者,在本實施形態中,雖然是形成為拍攝已分割之晶圓的外周位置,並以晶圓之外周位置為基準來調整相鄰之晶片的間隔之構成,但並不限定於此構成。只要是可將相鄰之晶片的間隔調整成預先設定之間隔的構成即可,以任何方式調整晶片的間隔皆可。例如,亦可形成為一邊拍攝已分割之晶圓,以從拍攝圖像中測量相鄰之晶片的間隔,一邊調整晶片之間隔的構成。 In addition, in this embodiment, although it is formed to photograph the outer peripheral position of the divided wafer and adjust the distance between adjacent wafers based on the outer peripheral position of the wafer, it is not limited to this structure. . The distance between adjacent wafers can be adjusted to a preset distance, and the distance between wafers can be adjusted in any manner. For example, it may be configured to adjust the gap between the wafers while photographing the divided wafers to measure the distance between adjacent wafers from the photographed image.
具體地說,是如圖5A所示,當藉由膠帶T之擴張而分割晶圓W時,是在相鄰之晶片C之間形成間隔S1。在晶圓之分割後,是解除膠帶T之擴張,並藉由膠帶T之彈性回復來使相鄰之晶片C逐漸地靠近。此時,在工作
台10之上方設置有拍攝設備48,並藉由拍攝設備48來拍攝分割後之晶圓W。於拍攝設備48上連接有測量設備49,且可對從拍攝設備48輸入之拍攝圖像施行各種圖像處理,並可藉由測量設備49來測量相鄰之晶片C的間隔。
Specifically, as shown in FIG. 5A, when the wafer W is divided by the expansion of the tape T, a gap S1 is formed between adjacent wafers C. After the wafer is divided, the expansion of the tape T is released, and the adjacent chips C are gradually approached by the elastic recovery of the tape T. At this time, at work
A photographing
並且,如圖5B所示,當藉由框架保持設備20對工作台10之接近,而使測量設備49所測定到之晶片C的間隔與預先設定之間隔S2一致時,會藉由工作台10來吸引保持膠帶T以維持晶片C之間隔。如此,以拍攝設備48來監控相鄰之晶片C的間隔,並且一邊直接地測量晶片C的間隔,一邊調整晶片C的間隔。再者,測量設備49是與控制設備40同樣地,由實行各種處理之處理器或記憶體等所構成。
And, as shown in FIG. 5B, when the proximity of the
又,在本實施形態中,雖然是形成升降設備使框架保持設備相對於工作台升降之構成,但並不限定於此構成。只要升降設備是可使工作台與框架保持設備相對地接近及遠離之構成即可,例如,亦可形成為使工作台相對於框架保持設備升降之構成。又,升降設備並不限定於電動汽缸,以其他的致動器(actuator)來構成亦可。 In addition, in this embodiment, although a structure is formed to raise and lower the frame holding device with respect to the table, it is not limited to this structure. As long as the lifting device has a structure that allows the workbench and the frame holding device to approach and distance relatively, for example, it may be formed as a structure that allows the workbench to be raised and lowered relative to the frame holding device. In addition, the elevating equipment is not limited to an electric cylinder, and may be constituted by another actuator (actuator).
又,在本實施形態中,外周拍攝設備只要是可拍攝晶圓之外周的構成即可,亦可使用例如電荷耦合元件(Charged Coupled Device,CCD)、互補式金屬氧化物半導體(Complementary Metal Oxide Semiconductor,CMOS)等之拍攝元件。又,變形例之拍攝設備只要是可拍攝晶圓之構成即可,亦可為例如使用CCD、CMOS等之拍 攝元件。 In addition, in this embodiment, the peripheral imaging device may be configured to image the periphery of the wafer. For example, a charged coupled device (CCD) or a complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor) may be used. , CMOS) and other imaging components. In addition, the imaging device of the modified example only needs to have a structure capable of imaging wafers, and may also be imaging devices using CCD, CMOS, etc. Camera components.
又,雖然已說明了本發明之實施形態,但作為本發明之其他實施形態,亦可為將上述實施形態及變形例整體地或部分地組合而成之形態。 In addition, although the embodiment of the present invention has been described, as another embodiment of the present invention, it is also possible to combine the above-mentioned embodiments and modifications in whole or in part.
又,本發明之實施形態並不限定於上述之實施形態及變形例,且亦可在不脫離本發明之技術思想的主旨的範圍內進行各種變更、置換、變形。此外,若能經由技術之進步或衍生之其他技術而以其他的方式來實現本發明之技術思想的話,亦可使用該方法來實施。從而,專利請求的範圍涵蓋了可包含在本發明之技術思想範圍內的所有的實施形態。 In addition, the embodiments of the present invention are not limited to the above-mentioned embodiments and modifications, and various changes, substitutions, and modifications may be made within the scope not departing from the technical idea of the present invention. In addition, if the technical idea of the present invention can be realized in other ways through technological progress or other derived technologies, this method can also be used to implement it. Therefore, the scope of the patent request covers all embodiments that can be included in the scope of the technical idea of the present invention.
又,在本實施形態中,雖然針對適用於分割裝置之構成來說明本發明,但亦可為適用於適當地擴張膠帶之其他的擴張(expand)裝置。 In addition, in this embodiment, although the present invention has been described with respect to the configuration applicable to the dividing device, it may also be another expansion device suitable for appropriately expanding the tape.
如以上所說明地,本發明具有可以在不使晶片的拾取性惡化的情形下,確實地分割晶圓之效果,尤其對於分割半導體晶圓之分割裝置特別有用。 As described above, the present invention has the effect of reliably dividing wafers without deteriorating the pick-up properties of the wafers, and is particularly useful for a dividing device for dividing semiconductor wafers.
10‧‧‧工作台 10‧‧‧Working table
14‧‧‧開關閥 14‧‧‧On-off valve
16‧‧‧吸引源 16‧‧‧Attraction source
20‧‧‧框架保持設備 20‧‧‧Frame holding equipment
30‧‧‧收縮設備 30‧‧‧Shrinking equipment
32‧‧‧加熱器 32‧‧‧Heater
33‧‧‧上下動作部 33‧‧‧Up and down movement part
34‧‧‧旋轉馬達 34‧‧‧Rotating Motor
40‧‧‧控制設備 40‧‧‧Control equipment
45‧‧‧外周拍攝設備 45‧‧‧peripheral shooting equipment
F‧‧‧環狀框架 F‧‧‧Ring frame
T‧‧‧膠帶 T‧‧‧Tape
C‧‧‧晶片 C‧‧‧chip
W‧‧‧晶圓 W‧‧‧wafer
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TW200913096A (en) * | 2007-06-19 | 2009-03-16 | Renesas Tech Corp | Manufacturing method for semiconductor integrated device |
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