JP5939416B2 - Work dividing apparatus and work dividing method - Google Patents

Description

  The present invention relates to a workpiece dividing apparatus and a workpiece dividing method, and in particular, a dicing tape is expanded after dicing processing on a semiconductor wafer mounted on a ring-shaped frame via a dicing tape and diced and grooved into individual chips. Thus, the present invention relates to a workpiece dividing apparatus and a workpiece dividing method for dividing the chip into individual chips.

  2. Description of the Related Art Conventionally, in the manufacture of semiconductor chips, for example, a semiconductor wafer as a workpiece having a parting line formed therein in advance by laser irradiation or the like is called a DAF (Die Attach Film Die attach film) film adhesive for die bonding. In a work unit affixed to a frame via a dicing tape (adhesive tape, adhesive sheet) marked with, the dicing tape is expanded (expanded) to divide the semiconductor wafer and DAF into individual chips.

  FIG. 30 shows the work unit 2. Here, the work unit 2 is used as a term indicating the whole of the semiconductor wafer W as a work adhered to the dicing tape via the DAF.

  30A is a perspective view, and FIG. 30B is a cross-sectional view. As shown in the figure, a semiconductor wafer W has a dicing tape S having a thickness of about 100 μm with an adhesive layer formed on one side and is attached to the back side via DAF (D). The dicing tape S is mounted on a rigid ring-shaped frame F. Then, in the workpiece dividing device, the dicing tape S is expanded, and the semiconductor wafer W is divided (divided) into each chip T.

  Here, DAF is highly viscous near room temperature. As described above, in order to expand the tape with DAF and separate the semiconductor wafer into chips, the DAF is cooled and made brittle. Need to be extended. As typical cooling methods, a low-temperature chuck table method and an atmosphere cooling method are known.

  On the other hand, it is necessary to re-tension the loosened tape after expansion for processing in a process after the tape is expanded and separated into chips. As a typical tension method, there is a method of heating with a warm air heater or the like. Although this method has a low running cost, it has been difficult to perform cooling / expansion and heating / tensioning in one unit due to the characteristic that hot air diffuses.

  For example, as a work dividing device, a work frame having a work frame, which is a frame in which a work to be divided in advance is supported via a dicing tape, is held, and the frame and the work are orthogonal to the work surface. The dicing tape is expanded by separating in the direction, the dividing means for dividing the work along the planned dividing line, the heating means for heating and removing the slack of the dicing tape caused by the expansion, and the frame with the work are rotated. There has been proposed a workpiece dividing device that includes a cleaning unit that cleans a workpiece by supplying a cleaning liquid to the workpiece and a unit that irradiates ultraviolet rays onto a dicing tape of the workpiece (see, for example, Patent Document 1). .

JP 2010-206136 A

  However, since the cooling / expansion unit and the heat shrink unit are separate units in the one described in Patent Document 1, the work is conveyed between these units with the dicing tape slackened. . When the tape is slackened in this way, the shape of the tape hangs down and becomes indefinite, so the upper surfaces of the chips separated on the tape come into contact with each other or receive excessive bending stress. Sometimes. Therefore, there is a problem that the chip is damaged, the quality is deteriorated, and the yield is reduced.

  Further, when the slack dicing tape is tensioned, if the atmosphere is overheated with a heater or the like on the whole surface, the tape that has been made brittle by cooling is also heated to have excessive viscosity. That is, when the subsequent chip is peeled from the dicing tape, the chip cannot be peeled cleanly from the dicing tape due to the influence of the DAF having an excessive adhesive force. In some cases, DAFs may stick to each other, resulting in poor inter-chip separation.

  The present invention has been made in view of such problems. By carrying out cooling / expansion of the workpiece and maintenance of the expanded state in the same unit, the conveyance of the workpiece between the units is eliminated, and the dicing tape is loosened. It is an object of the present invention to provide a workpiece dividing apparatus and a workpiece dividing method capable of preventing deterioration of quality due to contact between chips and preventing the dicing tape from being excessively adhered by heating the DAF.

  In order to achieve the above object, a workpiece dividing apparatus according to the present invention expands a dicing tape, and divides a workpiece affixed to the dicing tape via a die attach film into individual chips, and a dicing tape Selective light that eliminates the slack of the dicing tape by applying spot light to the part other than the area where the work is affixed via the die attach film and the part relaxed by the expansion of the work dividing means. Heating means, and atmosphere cooling means for cooling the atmosphere including the workpiece and the dicing tape portion in which slack is eliminated by light heating.

  According to the present invention, only the slack portion of the dicing tape due to the expansion can be selectively heated by the selective heating means to be thermally contracted or thermally cured. Therefore, the atmosphere cooling means is used as a means for cooling the workpiece. In addition, the cooling and expansion of the workpiece and the maintenance of the expanded state can be performed at the same position, that is, the same unit. Thereby, since the work conveyance between the units can be eliminated as in the prior art, it is possible to prevent the deterioration of the chip quality due to the slack of the dicing tape. Further, since the DAF is warmed, it is possible to prevent excessive adhesion to the dicing tape.

  In order to achieve the above object, the work dividing method of the present invention includes a work dividing step of expanding a dicing tape, and dividing a work affixed to the dicing tape via a die attach film into individual chips, and a dicing Spot light is applied to the part other than the area where the work of the tape is pasted via the die attach film and the part relaxed by the expansion in the work dividing process, and the light is selectively heated to eliminate the slack of the dicing tape. A selective light heating step, and an atmosphere cooling step for cooling the atmosphere including the workpiece and the dicing tape portion in which slack is eliminated by light heating.

  According to the present invention, since the slack eliminating process for mechanically eliminating the slack due to the expansion of the dicing tape is provided, even if the atmosphere heating process is used as the process for heating the work, the cooling / expansion of the work and the expanded state are performed. The holding can be carried out in the same position, i.e. in the same unit. As a result, it is possible to eliminate the conveyance of the work between the units, and to prevent the deterioration of the chip quality due to the slack of the dicing tape. Further, since the DAF is warmed, it is possible to prevent excessive adhesion to the dicing tape.

  As described above, according to the present invention, only the slack portion due to the expansion of the dicing tape can be selectively heated by the selective heating means and thermally contracted or thermally cured, so that the atmosphere can be used as a means for cooling the workpiece. Even when the cooling means is used, the cooling / expansion of the workpiece and the holding of the expanded state can be performed in the same position, that is, in the same unit.

  In addition, according to the present invention, since the slack eliminating means for mechanically eliminating slack due to the expansion of the dicing tape is provided, even if the atmosphere cooling means is used as the means for cooling the work, the work is cooled, expanded and expanded. The state maintenance can be performed at the same position, that is, at the same unit.

  Thereby, since this invention can eliminate the workpiece conveyance between units like the past, it can prevent the quality fall of the chip | tip by the slack of a dicing tape, etc. Further, since the DAF is warmed, the dicing tape can be prevented from sticking excessively.

The block diagram which shows 1st Embodiment of the workpiece | work division | segmentation apparatus which concerns on this invention. Enlarged view of the thermo label affixed on the workpiece Enlarged view of the thermolabel after this process Flowchart of the operation of the work dividing apparatus according to the first embodiment of the present invention. A state diagram in which the work dividing apparatus according to the first embodiment is expanding. State diagram showing the wafer cover lowered State diagram showing the state where the wafer cover and the push-up ring are lowered while holding the dicing tape State diagram of heating the slack part of the dicing tape with a light heating device The top view which shows an example of the positional relationship of a light heating apparatus and a dicing tape A plan view showing a state of rotating and scanning the light heating device The top view which shows the example provided with eight light heating devices The top view which shows a mode that the eight selective heating apparatuses of FIG. 11 are rotationally scanned. Explanatory drawing which shows the measurement position of the dicing tape heated with the optical heating device Explanatory drawing which shows the measurement direction in each measurement position of FIG. Explanatory drawing showing measurement results Explanatory drawing which shows the measurement result of a comparative example Thermo-tracer screen showing how the outer periphery of the dicing tape is heated A thermo-tracer screen showing how the outer periphery of the dicing tape is heated State diagram showing the state after heat curing the dicing tape Plan view showing a workpiece after heat treatment in which the tip interval is maintained Explanatory drawing showing a state where the chip interval is not maintained when the present invention is not applied Flow chart of operation of workpiece dividing device without wafer cover The block diagram which shows the modification of the selective heating means of 1st Embodiment A state diagram in which the slack portion of the dicing tape is heated by a modification of the selective heating means The block diagram which shows 2nd Embodiment of the workpiece | work division | segmentation apparatus which concerns on this invention. Flowchart of the operation of the work dividing apparatus according to the second embodiment of the present invention. State diagram in which workpiece dividing device of second embodiment is expanding State diagram showing the state in which the sub-ring is inserted into the dicing tape State diagram holding dicing tape expanded by sub-ring (A) which shows a workpiece | work is a perspective view, (b) is sectional drawing.

  Hereinafter, a work dividing apparatus and a work dividing method according to the present invention will be described in detail with reference to the accompanying drawings.

[First Embodiment]
FIG. 1 is a configuration diagram showing a first embodiment of a workpiece dividing apparatus according to the present invention.

  As shown in FIG. 1, the workpiece dividing apparatus 1 according to the first embodiment is an apparatus that can perform cooling / expansion of the work unit 2 and maintenance of the expanded state in the same unit, and mainly the atmosphere cooling means. 10, a workpiece dividing unit 11, a selective heating unit 15, and a wafer cover 20.

  Then, the work unit 2 as shown in FIG. 30 is mounted on the frame F of the work dividing means 11. That is, a peripheral portion of a dicing tape S to which a semiconductor wafer W (hereinafter referred to as “wafer W”) as a workpiece is attached is mounted on a rigid ring-shaped frame F, and the frame F is fixed to the frame fixing mechanism 18. Is done.

  The back surface of the wafer W is in a state of being attached to the dicing tape S via a DAF (Die Attach Film die attach film... Hereinafter referred to as “DAF (D)”). Here, for example, a wafer W having a thickness of about 50 μm and a DAF (D) and a dicing tape S each having a thickness of about several μm to 100 μm are generally used.

  As the dicing tape S, the following types of tapes can be suitably used. That is, in the case of polyolefin (PO) tape, for example, UC-353EP-110 manufactured by Furukawa Electric or D-675 manufactured by Lintec, and in the case of polyvinyl chloride (PVC) tape, UE-110B manufactured by Nitto Denko or Lintec In the case of D-175, UV type DAF tape (base material is PO-based), FH series (for example, FH-9011) manufactured by Hitachi Chemical Co., Ltd. can be used. Moreover, as a pressure-sensitive DAF tape (a base material is PO type), HR series (for example, HR-9004) manufactured by Hitachi Chemical Co., Ltd. may be mentioned. Such a dicing tape S has expandability and is thermally contracted or thermally cured by heating.

  The expandable dicing tape S that holds the wafer W needs to be mounted on the frame F and expanded, so that it naturally becomes a larger area than the wafer W. For example, in the case of a disc having a wafer diameter (diameter) of 200 mm, the expanding dicing tape S is attached to a ring-shaped frame F having a size of about 300 mm, and the wafer W is inside thereof. The distance between the wafer W and the frame F is 25 mm to 40 mm or more.

  DAF (D) is interposed between the back surface of the wafer W and the dicing tape S. DAF (D) has substantially the same diameter as the wafer W, but is substantially larger than the wafer W. This is because DAF (D) is a stretchable material, and if the wafer W is exactly the same size, the wafer W may be attached to the DAF (D) with a slight deviation. It is. DAF (D) is slightly larger than wafer W in consideration of the amount of deviation, so that even if there is such a slight deviation, the wafer W is always placed on the DAF and pasted. It is preferable to make it large. However, the present invention is not necessarily limited to this. In an extreme case, the DAF (D) may be the size of the frame F as in the dicing tape S.

  Further, the DAF tape is a stretchable material, and in order to be surely attached to the back surface of the wafer W, the DAF diameter is about 10 mm larger than the diameter of the wafer W from the margin on the attachment accuracy. 2 mm or more (1 mm or more on one side) is preferable.

  The atmosphere cooling means 10 cools the work unit 2 including the wafer W having the line to be cut by cooling the atmosphere surrounding the work unit 2.

  The atmosphere cooling means 10 includes at least a refrigerating room cooling means 32 for cooling the entire inside of the refrigerating room 30 in which the devices of the workpiece dividing apparatus 1 are housed, and a cooling gas spraying means 34 for blowing a cooling gas to the work unit 2. It is configured by providing one.

  The refrigerating room cooling means 32 cools the entire refrigerating room 30 by introducing the cooling gas produced by the cooling gas production device 36 into the refrigerating room 30 through the duct 38. As a result, the atmosphere surrounding the work unit 2 is cooled, and the wafer W including the parting planned line of the work unit 2 is cooled. As a method for cooling the entire inside of the refrigerating chamber 30, a method of providing a cooling panel (not shown) on the entire inner wall surface of the refrigerating chamber 30 may be used in addition to the method of supplying the cooling gas into the refrigerating chamber 30.

  The cooling gas blowing means 34 supplies the cooling gas produced by the cooling gas production device 36 to the hollow disk-like blowing nozzle 42 provided below the work unit 2 via the duct 40. Cooling gas is blown out toward the work unit 2 from a number of air outlets formed on the upper surface (work surface side) of 42. The diameter of the hollow disc-shaped blowout nozzle 42 is preferably larger than the DAF diameter (for example, about 5 mm).

  In addition, it is preferable that the wind speed of the cooling gas which blows off from the blowing nozzle 42 is a wind speed of the grade which the work unit 2 supported by the flame | frame F does not produce a flutter. Even at such a wind speed, the cooling rate of the work unit 2 can be improved by generating convection in the cooling gas striking the work unit 2.

  Then, the work unit 2 is cooled by the atmosphere cooling means 10 such that DAF (D) is 0 ° C. or lower, for example, about −5 ° C. to −10 ° C. Accordingly, the cooling gas may be air, but it is preferable to use nitrogen gas, carbon dioxide gas, or the like that can be easily cooled to a low temperature. When nitrogen gas or carbon dioxide gas is used, the oxidation reaction of the tape can be suppressed even if the amount of heat input to the tape is excessive, and this is preferable in that there is no risk of smoke or ignition.

  In addition, although the example of the refrigerator internal cooling means 32 and the cooling gas spraying means 34 was shown as the atmosphere cooling means 10, it is not limited to this, The work unit 2 is cooled without contacting the work unit 2 directly. Anything can be used.

  The work dividing means 11 mainly includes a frame F for holding the dicing tape S of the work unit 2, a frame fixing mechanism 18 for fixing the frame F, and a push-up ring 12 for expanding the dicing tape S. .

  The push-up ring 12 is a cylindrical member disposed below the work unit 2 and between the wafer W and the frame F, and is disposed so as to surround the blowing nozzle 42. Further, the push-up ring 12 is configured to be movable up and down by a ring lift mechanism 16 and is formed so as to contact the entire circumference of the dicing tape S when the cylindrical push-up ring 12 is raised. Thus, the push-up ring 12 also serves as a partition wall that suppresses the diffusion of the cooling gas blown from the blow-out nozzle 42 to the outside of the push-up ring 12. The push-up ring 12 is preferably formed of a metal having good thermal conductivity such as aluminum.

  The push-up ring 12 may be provided with a roller 12A (roller) for reducing the frictional force. In FIG. 1, the push-up ring 12 is located at the lowered position (standby position) of the work unit 2.

  As shown in FIG. 30, on the wafer W, lines to be divided are formed in a lattice shape in advance by laser irradiation or the like. As will be described in detail later, the push-up ring 12 rises to push up the dicing tape S from below to expand (stretch) the dicing tape S. By extending the dicing tape S in this way, the division line is divided, and the wafer W is divided into individual chips T (see FIG. 30) together with DAF (D).

  By the way, as described above, the DAF (D) is cooled because the DAF (D) has a high viscosity at room temperature. Even if the dicing tape S is pushed up from the lower side by the push-up ring 12, the DAF (D) is It is because it will extend with the dicing tape S and will not be divided.

  That is, the DAF (D) is cooled and embrittled, so that it can be easily divided.

  The selective heating means 15 may be any device that can selectively heat the slack portion of the dicing tape S. Here, the light heating device 22 will be described.

  The light heating device 22 is arranged at a symmetrical position outside the wafer cover 20 and can be moved up and down by the wafer cover 20 and the heater lifting mechanism 23. As will be described in detail later, the periphery of the dicing tape S is lowered. The part is configured to be selectively heated. In FIG. 1, two light heating devices 22 are arranged at symmetrical positions in the diameter direction of the work unit 2, but the number of the light heating devices 22 is not limited to two. For example, four pieces may be arranged around the wafer cover 20 at intervals of 90 degrees.

  The light heating device 22 is, for example, a spot type halogen lamp heater. In addition, the light heating device 22 may be a laser, a flash lamp, or the like as long as it is irradiated with light and heated by radiation.

  In the case of such a light heating device 22, the light irradiation state can be visually confirmed. The region irradiated with light is heated by the radiation phenomenon, whereas the region not irradiated with light is not heated. That is, when irradiating light, the irradiation area can be visually recognized, so that the area where the irradiation can be visually recognized can be locally limited as an area heated by radiation.

  In the present embodiment, a spot-type halogen lamp heater is used as the light heating device 22. Specifically, a halogen spot heater LCB-50 (lamp rating 12 V / 100 W) manufactured by Infridge Industry Co., Ltd. was used. The focal length is 35 mm and the condensing diameter is 2 mm. However, as shown in FIG. 6 to be described later, instead of heating using the portion that is just focused, the distance (irradiation distance) from the light source to the object is 46 mm, and is offset by 11 mm with respect to the focal length of 35 mm. The irradiation diameter is 17.5 mm. The actual irradiation diameter is 15 mm, and an area having a diameter of 15 mm outside the work W of the dicing tape S is heated.

  As shown in FIG. 1, the wafer cover 20 has a bottomed cylindrical shape with a low bottom, and includes a bottom surface 20 a and a side surface 20 b, and the bottom surface 20 a is formed to be slightly larger than the wafer W.

  Further, the wafer cover 20 is installed so as to be movable up and down by a cover lifting mechanism 21, and covers the wafer W at the lowered position. On the other hand, the front end surface of the side surface 20b of the wafer cover 20 is brought into contact with the front end surface of the raised push-up ring 12, whereby the wafer W is completely sealed by the wafer cover 20 and the dicing tape S. Is done. The wafer cover 20 is preferably formed of a metal having good thermal conductivity such as aluminum, like the push-up ring 12.

  As shown in FIG. 1, it is preferable that the inside of the cover elevating mechanism 21 is hollow so that the cooling gas produced by the cooling gas production device 36 is blown out from the wafer cover 20 through a duct 39. In FIG. 1, a duct switching means 41 is provided so that a duct 38 from the cooling gas production device 36 to the refrigerating chamber 30 and a duct 39 to the wafer cover 20 can be switched. Thereby, the atmosphere cooling means for efficiently cooling the atmosphere only around the wafer (workpiece periphery) with the cooling gas blown out from the wafer cover 20 and the cooling gas blown out from the cooling gas blowing means 34 without cooling the entire inside of the refrigerator compartment 30. Can be built. When the cooling gas is blown out from the wafer cover 20 as described above, the cooling gas escape area disappears when the inside of the wafer cover 20 is completely sealed. (Not shown) must be open.

  In the case of the selective heating means 15, the push-up ring 12 is configured to be lifted and lowered by the ring lift mechanism 16, and when the cylindrical push-up ring 12 is lifted, the dicing tape S is moved all around. It is preferably formed so as to come into contact.

  By making the push-up ring 12 in contact with the entire circumference of the dicing tape S in this way, the push-up ring 12 has the following functions.

  That is, the region where DAF (D) is pasted must be kept in a cooled state in order to divide DAF (D) together with wafer W. On the other hand, when the dicing tape S is loosened after the dicing tape S is expanded, the loosening must be eliminated. This is because if the work unit 2 is transported while the slack remains on the dicing tape S, the divided chips T collide with each other and damage the chips. In order to eliminate this slack, as the dicing tape S, as described above, a heat-shrinkable tape having a function of heat-shrinking when heated or thermosetting is used.

  In this way, when expanding and dividing the wafer W individually, it is necessary to ensure that the DAF tape is improved by cooling the wafer area, and the outside of the wafer area is loosened. In order to eliminate this, it is necessary to selectively heat the dicing tape S to thermally shrink or heat cure the slack portion.

  That is, the push-up ring 12 and the wafer cover 20 have a function of separating the thermal environment in two regions, that is, a wafer region that needs to be kept in a cooled state and a wafer region that needs to be kept in a heated state. have.

  In particular, when the cooling gas spraying means 34 is used as the atmosphere cooling means 10, the cooling gas blown out from the cooling gas spraying means 34 is suppressed from being diffused by the push-up ring 12, and the wafer region is efficiently cooled. To do. In addition, the inflow of warm heat, which has heated a portion where the slack of the dicing tape S outside the wafer area is heated, to the wafer area is effectively blocked by the push-up ring 12. Further, since the dicing tape S is made of a polymer and has poor thermal conductivity as compared with metal or the like, the warm heat heated outside the wafer region is a metal push-up ring 12 or wafer cover having good thermal conductivity. Run along 20 and run away. Thereby, it is possible to make it difficult for warm heat to be transmitted to the wafer region existing on the inner peripheral portion of the push-up ring 12.

  From the above, the thermal environment can be effectively and effectively isolated by the push-up ring 12 and the wafer cover 20. That is, the inside of the push-up ring 12, and particularly the wafer region, is locally cooled to maintain a state in which the DAF division is improved. On the other hand, the outside of the push-up ring 12 can heat the dicing tape S to heat shrink or harden to remove the slack of the outer periphery of the dicing tape caused by the expansion, and create a tense situation. Become.

  FIG. 2 is an enlarged view of the thermo label TL affixed on the frame F of the work unit 2, on the dicing tape S outside the wafer cover 20, and on the wafer W side. FIG. 5 is an enlarged view of a thermo label after a process in which a dicing tape S outside the cover 20 is heated.

  Here, the thermo label TL is a type that turns red at a temperature of 50 ° C. or higher. As can be seen from the enlarged thermolabel after the process of FIG. 3, the wafer W side and the frame F side that are not irradiated with light do not reach 50 ° C.

  By using the spot type halogen lamp heater in this way, only the portion to be heated can be selectively (locally) heated, and the thermal stress on other portions can be minimized. .

  Further, as a halogen lamp power source, a Mutec Corporation halogen lamp power source KPS-100E-12 was used. The output of this halogen lamp power supply is rated voltage 12V. Also, it has a soft start (slow start) function to prevent inrush current from flowing through the halogen lamp.

  With these combinations, the time required to reach the heater maximum illuminance after a slow start of 0.75 seconds from the heater power ON command is within 3 seconds. This is a very short time compared to a warm air heater or an infrared heater. Similarly, the time from the maximum illuminance to power off is the same. Moreover, the change responsiveness from predetermined illuminance to another illuminance is also within 3 seconds. By using a halogen lamp in this way, a desired illuminance, that is, temperature can be obtained in a short time. This is difficult to realize with a general infrared heater or hot air heater. The good controllability is one reason why it is preferable to use a halogen lamp heater.

  Even when the work unit 2, particularly the wafer W and DAF (D), is cooled by the local cooling using the radiation phenomenon by the halogen lamp heater, only the slack portion of the outer periphery of the dicing tape is used. It can be selectively heated to remove slack. That is, the embrittlement of the DAF due to cooling and the maintenance of the expanded state due to thermal shrinkage or thermosetting of the dicing tape S can be performed in the same refrigerating chamber 30. This eliminates the need to move the location of the dicing tape S due to thermal contraction after the DAF is cooled.

  Next, according to the flowchart of FIG. 4, the workpiece dividing apparatus 1 according to the first embodiment configured as described above divides the wafer W of the workpiece unit 2 into individual chips T and divides them into individual pieces. A division method will be described. 5 to 8 show the refrigerator compartment 30 omitted.

  First, in step S200 of FIG. 4, as shown in FIG. 1, the work unit 2 having the dicing tape S bonded to the back surface of the wafer W via the DAF (D) is mounted on the frame F, and the frame F is attached to the frame F. It is fixed by the fixing mechanism 18.

  Next, in step S <b> 210 of FIG. 4, the work unit 2 is cooled using at least one of the cooling room cooling means 32 and the cooling gas spraying means 34. In particular, DAF (D) is cooled to about −5 ° C. to −10 ° C. to make DAF (D) brittle and easily cracked by applying force. Control of cooling conditions such as the temperature and air volume of the cooling gas blown out from the refrigerator compartment cooling means 32 and the cooling gas blowing means 34 is performed by a control means not shown.

  In addition, as shown in FIG. 30, on the wafer W, lines to be divided are previously formed in a lattice shape by laser irradiation or the like.

  Next, in step S220 of FIG. 4, as shown in FIG. 5, the push-up ring 12 is raised by the ring elevating mechanism 16, and the dicing tape S is expanded. In this case, the push-up ring 12 pushes up the dicing tape S to a height of 15 mm, for example, at a speed of 400 mm / sec.

  As a result, the dicing tape S is expanded radially from the center of the work unit 2 and the wafer W is divided into chips T along with the DAF (D) along the planned dividing line.

  Next, in step S230 of FIG. 4, as shown in FIG. 6, the wafer cover 20 and the light heating device 22 are lowered by the cover elevating mechanism 21 and the heater elevating mechanism 23, respectively. Cover the W part. At this time, as shown in FIG. 6, the front end surface of the side surface 20 b of the wafer cover 20 and the front end surface of the thrust ring 12 are brought into contact with each other, and the dicing tape S is placed between the wafer cover 20 and the thrust ring 12. Hold it. The force for gripping the dicing tape S between the wafer cover 20 and the push-up ring 12 is, for example, about 40 kgf.

  Next, in step S240 of FIG. 4, as shown in FIG. 7, while holding the dicing tape S between the wafer cover 20 and the push-up ring 12, the wafer cover 20 and the push-up ring 12 are lowered. . As a result, the peripheral portion of the portion of the dicing tape S gripped by the wafer cover 20 and the push-up ring 12 is relaxed, and a slack portion is generated. At this time, the force for gripping the dicing tape S between the wafer cover 20 and the push-up ring 12 is maintained at 40 kgf.

  Next, in step S250 of FIG. 4, as shown in FIG. 8, only the loose dicing tape S portion outside the portion gripped by abutting the front end surfaces of the wafer cover 20 and the push-up ring 12 is shown. Then, the light heating device 22 is selectively heated by applying a spot light. At this time, if the area of the DAF (D) to which the wafer W is attached is also heated at the same time, the DAF (D) may melt and the gap between the chips T may be lost. It is necessary to selectively heat only the slack portion other than the region where the mark is attached. In this regard, in the first embodiment, the DAF (D) (DF (D) with the wafer W attached thereto is selectively heated by the optical heating device 22 and the thermal environment is isolated by the push-up ring 12 and the wafer cover 20. ) Can be effectively prevented from being heated at the same time. It is also a good method to cool the wafer region by blowing a cooling gas from the blowing nozzle 42 and the wafer cover 20 while heating the relaxed portion of the dicing tape S by the light heating device 22.

  By this heating, the slack portion of the dicing tape S is tensioned by heat shrinkage or thermosetting, and the slack is eliminated. For example, each of the light heating devices 22 is 100 W, and irradiates light to an area having a diameter of 20 mm. The gripping force between the wafer cover 20 and the push-up ring 12 is also maintained at 40 kgf.

  Further, at this time, after the light heating device 22 is turned on and the heating state is stabilized (after about 2 seconds), the dicing tape S is not biased in the expanded state by heating only from a fixed position. Furthermore, it is preferable to rotate the light heating device 22 around the wafer cover 20 at a constant cycle and at a predetermined speed. In this way, by rotating the light heating device 22 around the wafer cover 20 at a constant period and heating from various directions, it is possible to prevent the dicing tape S from being biased in the expanded state. When the light heating device 22 is rotated, the heater lifting mechanism 23 not only simply moves the light heating device 22 up and down, but also has a function of a heater rotating mechanism that rotates the light heating device 22 at a constant cycle. May be.

  Here, the control method of the light heating device 22 will be described in detail. FIG. 9 is a plan view showing an example of the positional relationship between the light heating device 22 and the dicing tape S. The light heating device 22 is a spot type halogen lamp heater.

  In the example shown in FIG. 9, four light heating devices 22 are arranged around the dicing tape S symmetrically at equal intervals. In FIG. 9, the wafer W, the frame F, and the like are omitted, and only one chip T is displayed in the center.

  In the example of FIG. 9, the chip T is substantially square, and each light heating device 22 is arranged at a position facing each side of the chip T. When the power source of each light heating device 22 is turned on at this position, the dicing tape S formed of a heat-shrinkable or thermosetting material is heated and heat-shrinks as shown by an arrow J in the figure or is heated. Harden. As a result, the chip T is pulled in the X direction and the Y direction.

  Here, for example, it is assumed that the dicing tape S is not easily contracted in the X direction (horizontal direction) and is easily contracted in the Y direction (vertical direction). In order to eliminate such shrinkage anisotropy, the light heating device 22 arranged in the X direction, which is hard to shrink, is more (halogen lamp heater) than the light heating device 22 arranged in the Y direction, which is easy to shrink. Set the applied voltage to a higher value. As a result, the dicing tape S is uniformly contracted in the vertical direction and the horizontal direction, and each chip T is pulled evenly in the outer peripheral direction, so that the chips T do not stick to each other and do not cause misalignment.

  Further, at this time, as indicated by an arrow K in FIG. 9, the light heating device 22 (spot type halogen lamp heater) is rotationally scanned around the dicing tape S by the heater lifting mechanism 23.

  FIG. 10 shows how the optical heating device 22 is rotationally scanned.

  First, the light heating device 22 (not shown in FIG. 10) is turned on at the position indicated by reference numeral 1 in FIG. At this time, as described above, the dicing tape S is not easily contracted in the X direction (horizontal direction) and is easily contracted in the Y direction (vertical direction). The applied voltage is set to be higher than that of the light heating device 22 at the position of symbol L.

  Next, the power of the light heating device 22 is turned off or a voltage that does not contribute to heating is applied, and the light heating device 22 is moved 45 by the heater lifting mechanism 23 to the position of the reference numeral 2, which is exactly the middle position of the reference numeral 1. Rotate degrees.

  Next, the dicing tape S is heated by turning on the power of the light heating device 22 again at the position of reference numeral 2. Since the position indicated by reference numeral 2 is an intermediate direction between the X direction and the Y direction, the applied voltages of all the light heating devices 22 are made equal.

  In this way, the dicing tape S can be evenly contracted in all the horizontal, vertical and diagonal directions.

  Note that the number of light heating devices 22 is not limited to four as in this example, and one light heating device is added between each of the four light heating devices 22 shown in FIG. A single light heating device 22 may be provided.

  FIG. 11 shows an example provided with eight light heating devices. In the example shown in FIG. 11, one light heating device 22 is arranged between each light heating device 22 with respect to the four light heating devices 22 in FIG. 9, and eight light heating devices 22 in total. Are arranged around the dicing tape S at equal intervals. Also in this case, the eight light heating devices 22 can be moved up and down with respect to the dicing tape S by the heater lifting mechanism 23 and can be rotated and scanned around the same.

  FIG. 12 shows how the eight light heating devices 22 are rotationally scanned.

  For example, the eight light heating devices 22 initially heat the peripheral portion of the dicing tape S at the position 1 in FIG. Next, as shown by an arrow K in FIG. 12, the light heating device 22 is rotated by 22.5 degrees (360 degrees ÷ 8 ÷ 2) to the position of 2 by the heater elevating mechanism 23.

  During this rotation, the light heating device 22 turns off the power or applies a voltage that does not contribute to heating. Then, the peripheral portion of the dicing tape S is heated at a position indicated by reference numeral 2 in FIG.

  At this time, as in the previous example, when the dicing tape S is less likely to contract in the X direction (horizontal direction) with respect to the chip T than in the Y direction (vertical direction), it is indicated by a broken line in FIG. In the light heating device 22 in the range H, the applied voltage is set higher than that in the light heating device 22 in the range L indicated by the broken line in FIG.

  Note that the number of the light heating devices 22 is not limited to four or eight as in these examples, but is at least four or more and symmetrically arranged along the outer periphery of the dicing tape S at equal intervals. I can do it. For example, the six light heating devices can be arranged symmetrically at equal intervals along the outer periphery of the dicing tape S, and thus may be six.

  Further, two light heating devices may be added between the four light heating devices 22 in FIG. 9 to obtain twelve, or three light heating devices 22 in FIG. It is good also as 16 by adding a light heating apparatus. Thus, the number of the light heating devices 22 is preferably a multiple of four.

  In this way, at least four or more light heating devices are evenly arranged around the dicing tape S, and the dicing tape S is heated in a direction in which the dicing tape S hardly contracts by increasing the voltage applied to the light heating device 22. In this way, by repeating the heating by the light heating device 22 and the rotation at a predetermined angle, the dicing tape S can be uniformly contracted in all the horizontal, vertical and oblique directions.

  Here, it is assumed that eight light heating devices 22 are arranged at equal intervals along the periphery of the dicing tape S as shown in FIG. Similarly to the example of FIG. 11, it is assumed that the dicing tape S is less likely to contract in the X direction (lateral direction) shown with respect to the chip T than in the Y direction (vertical direction).

  Next, at the position indicated by reference numeral 1 in FIG. 12, the power sources of the eight light heating devices 22 are turned on to heat the slack outer peripheral portion of the dicing tape S. At this time, in the region surrounded by the broken line H in FIG. 12, the applied voltage of the light heating device 22 is set higher than in the region surrounded by the broken line L. Thereby, the horizontal direction (X direction) in which the dicing tape S is difficult to contract can be contracted in the same manner as the direction in which the dicing tape S is easily contracted (Y direction), and the anisotropy of the contraction can be suppressed.

  Next, the light heating device 22 is turned off or a voltage that does not contribute to heating is applied and the light heating device 22 is moved to a position indicated by reference numeral 2 by the heater lifting mechanism 23 as shown by an arrow K in FIG. Rotate.

  Next, the power source of the light heating device 22 is turned on at the position 2 in FIG. 12 to heat the outer peripheral portion of the dicing tape S. At this time, in the region surrounded by the broken line H in FIG. 12, the applied voltage of the light heating device 22 is set higher than the region surrounded by the broken line L.

  Then, the power source of the light heating device 22 is turned off and the light heating device 22 is raised to the standby position by the heater lifting mechanism 23.

  Finally, the wafer cover 20 is raised to the standby position in the same manner as the light heating device 22, and the push-up ring 12 is also lowered to the standby position to release the dicing tape S from being expanded. Then, the frame F is removed and the work is conveyed to the next process.

  In this way, by selectively and evenly heating only the slack portion of the dicing tape S by the light heating device 22, the dicing tape S is uniformly shrunk in all directions, and the interval and arrangement of the divided chips T are divided. Can be maintained. Further, another heating control method when eight light heating devices 22 are arranged at equal intervals along the periphery of the dicing tape S will be described.

  That is, for example, as shown in FIG. 11, spot-type halogen lamp heaters are arranged as eight light heating devices 22 at equal intervals along the periphery of the dicing tape S. At this time, however, the chip T is not substantially square as shown in FIG. 11, and the length ratio (aspect ratio) in the X direction (horizontal direction) and Y direction (vertical direction) in the drawing is 1: 2. 4 is a vertically long rectangle (see FIG. 14).

  The light heating devices 22 are arranged around the dicing tape S at intervals of 45 degrees. This 45 degree interval is divided into eight equal parts, and each light heating device 22 is rotated along the periphery of the dicing tape S by 5.6 degrees, and is heated at that position every time it rotates 5.6 degrees. . At this time, initially, in FIG. 13, the applied voltage to the halogen lamp heater as the light heating device 22 is 12V at the Left and Right positions and 5V at the Top and Bottom positions.

  Thus, after heating 8 times while rotating by 5.6 degrees, the next is to start from a position shifted by 2.8 degrees, which is half 5.6 degrees from the first position. This time, the voltage applied to the halogen lamp heater is 12V at the Left and Right positions and 11V at the Top and Bottom positions. And it heats 8 times, rotating 5.6 degrees at a time.

  In this way, the intervals between the chips T on the dicing tape S are set at five points as shown in FIG. 14 at five points of Center, Left, Right, Top, and Bottom shown in FIG. Measurements were made in two directions, horizontal and vertical.

  In FIG. 15, the measurement result of each point is shown about each location. From this result, it can be seen that the distance between chips is about 20 to 30 on average in any place by the heating control as described above, and the difference is not so large.

  On the other hand, for comparison, FIG. 16 shows a measurement result in the case where heating is simply performed from the entire periphery of the dicing tape S without performing such heating control.

  Referring to FIG. 16, when the aspect ratio of the chip T is 1: 2.4 and anisotropy, when the same heating is performed from all directions, the chip interval depends on the location and direction on the dicing tape S. However, it can be seen that, on average, 10 to 50 units have changed greatly.

  Thus, by performing the heating control as described above, the dicing tape S is contracted in the same manner in all directions even when the chip has a shape that is greatly deviated from the square and has anisotropy. be able to. On the contrary, even when the chip is isotropic and has no anisotropy and the dicing tape S has anisotropy, the above heating control method can be used.

  In the example described so far, the light heating device 22 is a spot-type halogen lamp heater. However, since the wafer cover 20 is present, a warm air heater can be used. That is, if the hot air is blown out only to a local area from the nozzle or the like, the hot air can be prevented from going directly to the area of the semiconductor wafer W by the wafer cover 20. It is possible to selectively heat only the slack portion.

  Moreover, in this embodiment, since it heats with the thermal radiation by the optical heating apparatus 22, only the loose part of the dicing tape S can be heated locally (selectively).

  Particularly in this embodiment, since the wafer W is covered with the wafer cover 20, the heat is shielded, and the DAF (D) to which the workpiece is attached by the light heating device 22 can be prevented from being heated, Further, local heating by the light heating device 22 is possible.

  Further, since the wafer cover 20 and the push-up ring 12 grip the vicinity of the slack portion of the dicing tape S, the wafer cover 20 and the push-up ring 12 are also heated by heating the slack portion. However, this heat escapes through the wafer cover 20 and the push-up ring 12 by heat conduction. Accordingly, the DAF (D) to which the wafer W surrounded by the wafer cover 20 and the push-up ring 12 is attached is thermally shielded and is not heated.

  Therefore, in the present embodiment, the cooling of the DAF (D) to which the wafer W is stuck and the heating of the slack dicing tape S other than the area to which the wafer W is stuck are in one unit (in the refrigerator compartment 30). Can be done.

  The result of heating the slack portion of the dicing tape S on the outer peripheral portion of the wafer cover 20 in this manner is shown in FIGS.

  FIGS. 17 and 18 are thermotracer screens in which the dicing tape S selectively heated by the light heating device 22 is measured to be thermally contracted.

  17 and 18, the dicing tape S slackened outside the wafer cover 20 is locally heated with a spot type halogen lamp heater. As a result, the temperature at the heating center of the dicing tape S indicated by symbol A in FIGS. 17 and 18 reaches nearly 140 degrees. In contrast, the temperature of the wafer cover 20 is about 50 degrees, and the temperature of the frame fixing mechanism 18 is also about 40 degrees. In addition, although the part of the code | symbol B of FIG.17 and FIG.18 is also about 90 degree | times, this contains the regular reflection light from a halogen lamp, and is not measured correctly.

  In this way, by heating with the spot type halogen heater, only the slack portion of the dicing tape S can be heated and selectively heated so as not to raise the temperature of the other portions.

  Next, the result of conducting a heat shrinkage experiment with the light heating device 22 by radiation on various types of the dicing tape S described above will be described.

  The process time was a standard time for a PO tape. The work unit 2 was cooled from room temperature to −10 ° C. in 20 seconds. The expand lifted the 15 mm push-up ring 12 in 3 seconds. The slack formation time on the dicing tape S was 7 seconds. The heat shrinkage is set to 24 seconds + 6 seconds with a slow start and a moving time of the light heating device 22 of 6 seconds × 4 steps. Alternatively, the heat shrinkage is set to 48 seconds + 10 seconds in 6 seconds × 8 steps for the slow start and the moving time of the light heating device.

  The waiting time for the dicing tape S to be cured is 30 seconds, and further, it is 10 seconds for loading, unloading, centering, and the like. The total of the above is 100 seconds or 128 seconds. Note that 8 steps are for a small chip.

  At this time, since the light heating device 22 is a spot type, the amount of input heat per unit area at the light irradiation position is large. As a result, not only the heat-shrinkable PO dicing tape but also the thermosetting PVC dicing tape could be tensioned.

  For example, D175, which is a PO-based tape manufactured by Lintec as described above, was able to extend and hold 5 mm in the tape roll direction (MD) and 3 mm in the width direction (TD).

  In this way, when the dicing tape S is heated for a predetermined time and the dicing tape S is tensioned and loosening is eliminated, heating by the light heating device 22 (rotation of the light heating device 22) is stopped. At this time, the dicing tape S is continuously held by the wafer cover 20 and the push-up ring 12 for about 30 seconds until the dicing tape S is cured.

  Finally, in step S260 of FIG. 4, as shown in FIG. 19, the wafer cover 20 and the light heating device 22 are raised, and the push-up ring 12 is lowered to release the dicing tape S. During this time, the work unit 2 may be cooled by the atmosphere cooling means 10 so as to accelerate the curing by cooling the heat shrinkage portion or the thermosetting portion.

  Thereby, by taking the heat of the heated part of the outer peripheral part of the dicing tape S, the dicing tape S can be hardened in a short time compared with the normal room temperature. Thereafter, the atmosphere cooling means 10 is also stopped.

  In this way, it is possible to manufacture the work unit 2 in which the interval between the chips T is sufficiently maintained and the surrounding dicing tape S is not loose. FIG. 20 shows a photograph of the workpiece after the heat shrinking treatment manufactured in this way. FIG. 20 is an image taken from the back side of the tape. It can be clearly confirmed that white gaps are present in the wafer in the vertical and horizontal directions, and it can be seen that the chips are maintained in a separated state.

  On the other hand, when the cooling / expansion unit and the heat shrinking unit are separate units as in the prior art and it is necessary to transport the workpiece between the units, the slack dicing tape S droops greatly and becomes indefinite. That is, as shown in the state diagram of FIG. 21, the upper surfaces of the chips T separated with the DAF (D) on the dicing tape S come into contact with each other. In this way, if there is no gap between adjacent chips, the chip may be damaged in the subsequent process, leading to a decrease in quality.

  However, according to the present embodiment, as shown in FIG. 20, the state in which the chips T separated from each other after the thermal contraction process are maintained is maintained, and the quality of the chips T and the yield are reduced. Nor.

  In the first embodiment described above, the wafer cover 20 covers the portion of the wafer W of the work unit 2 and is thermally shielded from the light heating device 22 that is a heating unit. However, since the light heating device 22 can selectively heat by applying heat in a spot manner, it is preferable to thermally shield it with the wafer cover 20, but shielding by the wafer cover 20 is not necessarily required.

  Accordingly, a modification in which the use of the wafer cover 20 is stopped from the first embodiment is also conceivable. Hereinafter, the operation when the wafer cover 20 is not provided will be described with reference to the flowchart of FIG.

  As the workpiece dividing apparatus, it is assumed that the wafer cover 20 is removed from the apparatus configuration of the first embodiment shown in FIG. 1, or the apparatus configuration is the same and the wafer cover 20 is simply not used.

  First, in step S300 in FIG. 22, the work unit 2 having the dicing tape S bonded to the back surface of the semiconductor wafer W via the DAF (D) is mounted on the frame F, and the frame F is fixed by the frame fixing mechanism 18.

  Next, in step S310 of FIG. 22, the work unit 2 is cooled using at least one of the refrigerator compartment cooling means 32 and the cooling gas spraying means 34. In particular, DAF (D) is cooled to about −5 ° C. to −10 ° C. to make DAF (D) brittle and easily cracked by applying force. Control of cooling conditions such as the temperature and air volume of the cooling gas blown out from the refrigerator compartment cooling means 32 and the cooling gas blowing means 34 is performed by a control means not shown.

  Next, in step S320 of FIG. 22, the ring 12 for raising is raised by the ring raising / lowering mechanism 16, and the dicing tape S is expanded.

  Next, in step S330 in FIG. 22, the push-up ring 12 is lowered. Thereby, the peripheral part of the dicing tape S relaxes and a slack part occurs.

  Next, in step S340 of FIG. 22, only the portion of the dicing tape S relaxed outside the push-up ring 12 is selectively heated by applying the spot light with the light heating device 22. Thereby, the slack portion of the dicing tape S is tensioned by heat and the slack is eliminated. At this time, the heat applied to the relaxed portion of the dicing tape S is also transmitted to the other portions of the dicing tape S, but the heat is transferred through the push-up ring 12 in contact with the dicing tape S. Because of this, the heat escapes, so that it is difficult for the heat to be transmitted to the DAF (D) region.

  At this time, the dicing tape S is a polymer and has a low thermal conductivity, whereas the push-up ring 12 is made of metal or the like, so that heat is easily transferred to the push-up ring 12 as it is. Further, if the heat conductivity of the push-up ring 12 is set to be higher than that of the dicing tape S, heat is not transmitted particularly to the DAF (D).

  At this time, it is preferable to cool the regions of the wafer W and DAF (D) at the same time by blowing a cooling gas from the blowing nozzle 42. Thus, by taking the heat of the heated portion of the outer peripheral portion of the dicing tape S, the DAF (D) is heated when the light heating device 22 is heating the loosened portion of the dicing tape S. In addition to being able to prevent this, the heated portion of the dicing tape S can be cured in a shorter time than if it is usually left at room temperature.

  Finally, in step S350 in FIG. 22, the push-up ring 12 is lowered and moved to the lowered position (standby position).

  As a result, a work having a sufficiently secured chip interval is formed, and the processing in the next step is facilitated.

  According to the first embodiment described above, only the slack portion due to the expansion of the dicing tape S can be selectively heated by the selective heating means 15 to be thermally contracted or thermally cured. Even if the atmosphere cooling means 10 is used as the cooling means, the cooling / expansion of the work unit 2 and the holding of the expanded state can be performed at the same position, that is, the same unit. Thereby, since the work conveyance between the units can be eliminated as in the prior art, it is possible to prevent the deterioration of the chip quality due to the slack of the dicing tape.

  Further, by using the selective heating means 15 such as the light heating device 22 as means for heating the slack portion of the dicing tape S, the heated heat is not transmitted to the DAF (D). Therefore, even if the cooling / expansion of the work unit 2 and the expansion state are maintained in the same position, that is, in the same unit, the DAF (D) is not heated and does not excessively adhere to the dicing tape.

[Modification of First Embodiment]
FIG. 23 shows another embodiment of the selective heating means 15. Instead of the light heating device 22, the slack portion is selectively heated by direct contact with the slack portion of the dicing tape S. It is a thing. Other configurations are the same as those of the first embodiment described above.

  This heat transfer type selective heating means 15 is preferably integrated into the push-up ring 12. That is, a heating unit 44 (shaded portion in FIG. 23) is provided at the tip of the push-up ring 12, the heating unit 44 and the power supply device 46 are connected by the electrical wiring 48, and the power supply device 46 is turned on. The heating unit 44 is heated. In this case, it is preferable that the roller 12A (roller) is also heated.

  Accordingly, as shown in FIG. 24, the heating unit 44 directly contacts and heats the slack portion of the dicing tape S, and the slack portion is thermally contracted or thermoset, so that the expanded state of the dicing tape S is maintained. The Also in this case, as shown in FIG. 24, when the wafer cover 20 is lowered to cover the workpiece, the tip surface of the side portion 20b of the wafer cover 20 is abutted with the tip surface of the push-up ring 12, and the workpiece is removed from the wafer. It is preferable to seal inside the cover 20. Thereby, the wafer region can be completely thermally shielded from the outside of the wafer region heated by the heating unit 44.

  In the present embodiment, the heating unit 44 is provided at the tip of the push-up ring 12. However, the present invention is not limited to this, and the heating unit 44 may be configured separately. For example, a cylindrical heating unit may be formed between the push-up ring 12 and the frame F, and the heating unit 44 and the power supply device 46 may be connected by the electric wiring 48.

[Second Embodiment]
FIG. 25 is a block diagram showing a second embodiment of the workpiece dividing apparatus according to the present invention.

  As shown in FIG. 25, the workpiece dividing apparatus 100 is an apparatus that can perform cooling / expansion of the workpiece unit 2 and maintenance of the expanded state in the same unit, and mainly includes the atmosphere cooling means 10 and the workpiece dividing means. 11 and mechanical slack eliminating means 13.

  The atmosphere cooling means 10 and the work dividing means 11 are the same as those in the first embodiment described above, and thus description thereof is omitted. The mechanical slack eliminating means 13 is mainly configured by installing a sub-ring 14 on the outer peripheral side of the push-up ring 12. The sub ring 14 is for maintaining the expanded state of the expanded dicing tape S and maintaining the interval between the divided chips T, and the operation thereof will be described in the following work dividing method. To do.

  A work dividing method in which the wafer W of the work unit 2 is divided into individual chips T by the work dividing apparatus 100 according to the second embodiment configured as described above along the flowchart of FIG. explain.

  First, in step S100 in FIG. 26, as shown in FIG. 25, the work unit 2 having the dicing tape S bonded to the back surface of the wafer W via the DAF (D) is mounted on the frame F, and the frame F is fixed to the frame. It is fixed by the mechanism 18.

  Next, in step S110 of FIG. 26, the work unit 2 is cooled using at least one of the cooling room cooling means 32 and the cooling gas spraying means 34. In particular, the DAF (D) in the work unit 2 is cooled to about −5 ° C. to −10 ° C. to make the DAF (D) brittle and easily cracked by applying force. Control of cooling conditions such as the temperature and air volume of the cooling gas blown out from the refrigerator compartment cooling means 32 and the cooling gas blowing means 34 is performed by a control means not shown.

  Next, in step S120 of FIG. 26, as shown in FIG. 27, the expanding process of the dicing tape S is performed to separate the wafer W together with the DAF (D). In FIGS. 27 to 29, the refrigerator compartment 30 is omitted.

  That is, as shown in FIG. 27, the ring 12 for raising and the sub-ring 14 are raised by the ring raising / lowering mechanism 16. The push-up ring 12 is raised, for example, at 400 mm / sec and pushed upward by 15 mm. At this time, the sub ring 14 is stopped at a position where it does not rise above the frame F.

  As shown in FIG. 27, the dicing tape S is pushed up from below by the raising of the push-up ring 12, and is expanded (expanded) radially from the center of the work unit 2 in the plane of the dicing tape S. When the dicing tape S is expanded, the wafer W is divided along the line to be divided, and a gap of several μm to 100 μm is formed between the individual chips T. At this time, since the DAF (D) is cooled and becomes brittle, the DAF (D) is also divided along with the wafer W along the planned division line. As a result, the wafer W is divided into individual chips T each having DAF (D) on the back surface.

  When the expansion by the push-up ring 12 is released, the dicing tape S returns to its original state due to its elasticity, and there is no gap between the chips T. Therefore, the dicing tape S is at least in the region where the chips T exist. The extended state of S must be maintained.

  Then, in step S130 of FIG. 26, as shown in FIG. 28, the sub-ring 14 is raised by the ring lifting mechanism 16 to a position where it can be inserted into the expanded dicing tape S on the frame F, and the sub-ring 14 is diced. Insert into the expanded portion of tape S. At this time, the sub ring 14 is raised at a low speed so that the dicing tape S is not broken by the rising sub ring 14.

  Next, in step S140 of FIG. 26, as shown in FIG. 29, the push-up ring 12 is lowered leaving only the sub-ring 14 at a position above the frame F and moved to the lowered position (standby position). . At this time, since the sub-ring 14 remains at the position on the frame F, the expanded state of the dicing tape S is maintained.

  As a result, the expanded state of the dicing tape S is maintained, so that the gaps between the chips T are maintained wide, and the DAF (D) does not adhere again. Therefore, the work unit 2 is not transported in a state where the dicing tape S is slack, and subsequent processing is facilitated.

  As described above, by dividing the wafer W, which is a workpiece, by the method described with reference to the flowchart of FIG. 26, the workpiece is divided (divided into pieces) and the expansion for maintaining the gap between the divided chips is performed. The state can be maintained in the refrigerator compartment 30, which is the same position, that is, in one unit.

  As described above, in the second embodiment of the present invention, the slack due to the expansion of the dicing tape S is mechanically eliminated by the sub-ring 14, so that the atmosphere cooling means 10 is used as a means for cooling the work unit 2. Even if it is used, the work unit 2 can be cooled / expanded and kept in the expanded state after being expanded at the same position, that is, in the same unit (in the refrigerator compartment 30).

  Then, by cooling and expanding the work unit 2 and maintaining the expanded state in the same unit, it is possible to eliminate the work conveyance between the units, and to prevent deterioration of the quality due to contact between chips due to the slack of the dicing tape S. Can do. Furthermore, by performing the cooling / expansion of the work unit 2 and the maintenance of the expanded state in the same unit, the tact time for manufacturing the product can be increased.

  Further, since the slack due to the expansion of the dicing tape S is mechanically excluded by the sub ring 14, the DAF (D) is not warmed. Therefore, it is possible to prevent the dicing tape from sticking excessively.

  In addition, although the example of the sub ring 14 is shown as the slack eliminating means for mechanically eliminating the slack due to the expansion of the dicing tape S, the present invention is not limited to this, and any means can be used as long as it is a means for mechanically eliminating the slack. But you can.

  The work dividing apparatus and the work dividing method of the present invention have been described in detail above. However, the present invention is not limited to the above examples, and various improvements and modifications are made without departing from the gist of the present invention. Of course it is also good.

  For example, in the first embodiment, the region irradiated with the light of the dicing tape S can never be seen that the light is irradiated. However, even if the irradiation area is not visually recognized by infrared rays or the like, the predetermined area of the outer dicing tape S is relatively locally localized on the assumption that the wafer area where the DAF (D) is present is sufficiently locally cooled. What is necessary is just to be able to heat.

  Further, the heat-up region can be divided into the wafer region and the outer peripheral region of the dicing tape S by the push-up ring 12, the cooling state is formed in the wafer region, and the heating state is formed in the same portion in the outer peripheral portion of the dicing tape. If it is.

(Appendix)
As can be understood from the description of the embodiment described in detail above, the present specification includes disclosure of various technical ideas including the invention described below.

  (Supplementary note 1) In a workpiece dividing apparatus that divides a workpiece affixed to a dicing tape via a die attach film into individual chips along a predetermined division line, a workpiece holding position for holding the workpiece is provided. And, at the same position where the workpiece is held, an atmosphere cooling means for cooling the workpiece including the planned dividing line of the workpiece by cooling an atmosphere surrounding the workpiece made of the semiconductor wafer having the divided cutting line, and the cooling Thereafter, the dicing tape is expanded to selectively divide the work and the die attach film, and a portion of the dicing tape other than the region where the work is pasted via the die attach film is selectively heated. And by the expansion of the dicing tape Workpiece dividing apparatus comprising a selective heating means of eliminating only the.

  According to the invention of appendix 1, only the slack portion of the dicing tape due to the expansion can be selectively heated by the selective heating means to be thermally contracted or thermally cured, so the atmosphere cooling means is used as a means for cooling the workpiece. Even so, the cooling / expansion of the workpiece and the holding of the expanded state can be performed at the same position, that is, the same unit. Thereby, since the work conveyance between the units can be eliminated as in the prior art, it is possible to prevent the deterioration of the chip quality due to the slack of the dicing tape. Further, since the DAF is warmed, it is possible to prevent excessive adhesion to the dicing tape.

  (Additional remark 2) The said selective heating means is the optical heating apparatus which selectively heats parts other than the area | region where the said workpiece | work of the said dicing tape was stuck via the said die attach film by radiation of light. The workpiece dividing device described.

  If it is a light heating apparatus, the part loosened by the expansion of the dicing tape can be selectively heated.

  (Additional remark 3) In the workpiece | work division | segmentation apparatus which divides | segments the workpiece | work affixed on the dicing tape via the die attach film into each chip | tip along the pre-scheduled dividing line, it has a workpiece | work holding position holding the said workpiece | work. And, at the same position where the workpiece is held, an atmosphere cooling means for cooling the workpiece including the planned dividing line of the workpiece by cooling an atmosphere surrounding the workpiece made of the semiconductor wafer having the divided cutting line, and the cooling And a workpiece dividing device that expands the dicing tape to divide the workpiece and the die attach film, and a slack eliminating device that mechanically eliminates slack due to the expanding of the dicing tape.

  According to the third aspect of the invention, since the slack eliminating means for mechanically eliminating the slack caused by the expansion of the dicing tape is provided, even if the atmosphere cooling means is used as the means for cooling the work, the work is cooled, expanded and expanded. The state maintenance can be performed at the same position, that is, at the same unit. Thereby, since the work conveyance between the units can be eliminated as in the prior art, it is possible to prevent the deterioration of the chip quality due to the slack of the dicing tape. Further, since the DAF is warmed, the dicing tape can be prevented from sticking excessively.

  (Additional remark 4) The atmosphere cooling means includes at least one of a refrigerating room cooling means for cooling the whole refrigerating room in which the work dividing device is housed, and a cooling gas spraying means for blowing a cooling gas to the work. The work dividing apparatus according to any one of appendices 1 to 3.

  This shows a preferred embodiment of the atmosphere cooling means, and it is particularly preferable that both the cooling room cooling means and the cooling gas spraying means are provided.

(Appendix 5)
The workpiece according to any one of appendices 1 to 4, wherein the workpiece dividing means is a push-up ring that expands by pushing up an outer peripheral portion of the cooled workpiece relatively from an outer peripheral support portion of the dicing tape. Splitting device.

  According to this, a work can be divided at a time with a simple mechanism.

  (Supplementary Note 6) A bottomed cylindrical shape is provided so as to cover the area of the expanded workpiece, and is provided so as to be movable up and down, and includes a wafer cover that covers the workpiece when lowered, and the selective heating means includes The work dividing apparatus according to any one of appendices 1, 2, 4, and 5 disposed so as to be movable up and down around the wafer cover.

  According to this, even if the thrust ring is lowered, the chip interval is maintained, the area of the semiconductor wafer can be shielded from the heat of the selective heating means by the wafer cover, and the die attach film is prevented from melting, It is possible to prevent the gap between the chips from being lost.

  (Appendix 7) The work dividing means is a push-up ring that expands the outer peripheral portion of the cooled workpiece by relatively pushing up the outer peripheral support portion of the dicing tape, and the wafer cover is lowered to Item 7. The supplementary note 6, wherein when the workpiece is covered, a tip end surface of a side portion of the wafer cover is abutted with a tip end surface of the expanding push-up ring, and the workpiece is sealed inside the wafer cover. Work splitting device.

  Thereby, the area | region of a semiconductor wafer can be shielded completely thermally.

  (Additional remark 8) The said light heating apparatus is arrange | positioned so that the circumference | surroundings of the wafer cover which has covered the said workpiece | work can be rotated with a fixed period, The work dividing apparatus of Additional remark 2 characterized by the above-mentioned. Thereby, a dicing tape can be heated uniformly and it can prevent that a bias arises in the expansion state of a dicing tape.

  (Supplementary note 9) In a work dividing method for dividing a work affixed to a dicing tape via a die attach film into individual chips along a predetermined division line, a work holding position for holding the work is provided. And, at the same position where the workpiece is held, an atmosphere cooling step for cooling the workpiece including the planned dividing line of the workpiece by cooling an atmosphere surrounding the workpiece consisting of the semiconductor wafer having the scheduled cutting line, and the cooling Thereafter, the dicing tape is expanded to divide the work and the die attach film, and a portion of the dicing tape other than the region where the work is pasted via the die attach film is selectively heated. And by the expansion of the dicing tape Work dividing method comprising the selective heating step to eliminate themselves, the.

  According to the invention described in appendix 9, only the slack portion due to the expansion of the dicing tape can be selectively heated in the selective heating process to be thermally contracted or thermally cured, so that the atmosphere heating process is performed as a process for heating the workpiece. Even with the use of, the cooling and expansion of the workpiece and the holding of the expanded state can be performed at the same position, that is, the same unit. Thereby, since the work conveyance between the units can be eliminated as in the prior art, it is possible to prevent the deterioration of the chip quality due to the slack of the dicing tape. Further, since the DAF is warmed, it is possible to prevent excessive adhesion to the dicing tape.

  (Additional remark 10) The said selective heating process selectively heats parts other than the area | region where the said workpiece | work of the said dicing tape was stuck via the said die attach film by radiation of light. The work dividing method described.

  (Additional remark 11) In the workpiece | work division | segmentation method which divides | segments the workpiece | work affixed on the dicing tape via the die attach film into each chip | tip along the pre-scheduled dividing line, it has a workpiece | work holding position holding the said workpiece | work. And, at the same position where the workpiece is held, an atmosphere cooling step for cooling the workpiece including the planned dividing line of the workpiece by cooling an atmosphere surrounding the workpiece consisting of the semiconductor wafer having the scheduled cutting line, and the cooling A work dividing method comprising: a work dividing step of expanding the dicing tape to divide the work and the die attach film; and a slack eliminating step of mechanically eliminating slack due to the expanding of the dicing tape.

  (Additional remark 12) The said atmosphere cooling process was equipped with at least 1 of the refrigerating room cooling process which cools the whole refrigerating room in which the said workpiece | work division | segmentation apparatus is accommodated, and the cooling gas spraying process which sprays a cooling gas on the said workpiece | work. The work dividing method according to any one of appendices 9 to 11.

  According to the invention described in appendix 12, since the slack eliminating process for mechanically eliminating the slack due to the expansion of the dicing tape is provided, the cooling / expansion of the work can be performed even if the atmosphere heating process is used as the process for heating the work. And maintaining the expanded state can be performed in the same position, that is, in the same unit. Thereby, it is possible to eliminate the conveyance of the work between the units, and to prevent the deterioration of the chip quality due to the slack of the dicing tape. Further, since the DAF is warmed, it is possible to prevent excessive adhesion to the dicing tape.

  (Additional remark 13) The said workpiece | work division | segmentation process pushes up the outer peripheral part of the said cooled workpiece | work relatively from the outer peripheral support part of the said dicing tape with a thrusting ring, and expands it. The work dividing method according to any one of the above.

  In the workpiece dividing step, it is preferable that the outer peripheral portion of the cooled workpiece is expanded by being pushed up relatively from the outer peripheral support portion of the dicing tape with a push-up ring.

  (Supplementary Note 14) A wafer cover having a bottomed cylindrical shape so as to cover the area of the expanded workpiece is disposed so as to be movable up and down, and when the wafer cover is lowered, the cylindrical tip end surface is A workpiece covering step of abutting with a tip surface of the expanding push-up ring and sealing the workpiece inside the wafer cover, wherein the selective heating step is performed around the wafer cover covering the workpiece. The workpiece dividing method according to claim 9, wherein the workpiece is selectively heated.

  (Supplementary note 15) A work dividing apparatus including work dividing means for dividing a work affixed to the dicing tape via a die attach film into individual chips by expanding the dicing tape, and surrounding the work An atmosphere cooling means for cooling the atmosphere, and a work splitting means provided in the same unit as the atmosphere cooling means and a push-up ring for dividing the work by pushing up the dicing tape and expanding the dicing tape. The dicing tape is in a portion other than the region where the workpiece is pasted via the die attach film, and the push-up ring of the push-up ring is in a state where the atmosphere is cooled by the atmosphere cooling means. Select a spot light on the outer relaxed part and apply it selectively. And a selective light heating means that eliminates the slack of the dicing tape, and the atmosphere cooling means includes the die attach film and the slack portion of the dicing tape after the heating by the selective light heating means. Work dividing device that cools at the same time.

  (Supplementary Note 16) A work dividing method comprising a work dividing step of dividing a work affixed to the dicing tape via a die attach film into individual chips by expanding the dicing tape, and surrounding the work An atmosphere cooling step for cooling the atmosphere, and a step executed after the work is divided after the dicing tape is expanded by a push-up ring and the dicing tape is expanded to divide the work. Is performed in the same unit, and under the state where the atmosphere is cooled in the atmosphere cooling step, in a portion other than the region where the work of the dicing tape is pasted via the die attach film, and Spot light on the relaxed part outside the push-up ring A selective light heating step of selectively heating to eliminate slack of the dicing tape, and the atmosphere cooling step includes heating the die attach film and the dicing tape after the heating by the selective light heating step. Work splitting method that simultaneously cools the slack part of the workpiece.

  DESCRIPTION OF SYMBOLS 1,100 ... Work dividing device, 2 ... Work unit, 10 ... Atmosphere cooling means, 11 ... Work dividing means, 12 ... Push-up ring, 13 ... Slack eliminating means, 14 ... Sub-ring, 15 ... Selective heating means, DESCRIPTION OF SYMBOLS 16 ... Ring raising / lowering mechanism, 18 ... Frame fixing mechanism, 20 ... Wafer cover, 21 ... Cover raising / lowering mechanism, 22 ... Light heating apparatus, 23 ... Heater raising / lowering mechanism (rotation mechanism), 30 ... Cooling room, 32 ... Cooling room cooling Means 34: Cooling gas spraying means 36: Cooling gas production apparatus 38 ... Duct 41: Duct switching means 42 ... Blowing nozzle 44 ... Heating unit 46 ... Power supply device 48 ... Electrical wiring D ... Die attach Film (DAF), F ... Frame, S ... Dicing tape, T ... Chip, W ... Semiconductor wafer

Claims (2)

A workpiece dividing means for expanding a dicing tape and dividing a workpiece affixed to the dicing tape via a die attach film into individual chips;
The dicing tape is selectively heated by applying a spot light to a portion other than the region where the work is pasted via the die attach film and relaxed by the expansion of the work dividing means. Selective light heating means for eliminating the slack of
Atmosphere cooling means for cooling the atmosphere including the workpiece and the dicing tape portion in which slack is eliminated by the light heating;
Work splitting device equipped with A workpiece dividing step of expanding a dicing tape, and dividing a workpiece affixed to the dicing tape via a die attach film into individual chips;
The dicing tape is selectively heated by applying a spot light to a portion other than the region where the workpiece is pasted through the die attach film and relaxed by expanding in the workpiece dividing step, and the dicing A selective light heating process to eliminate tape slack,
An atmosphere cooling step for cooling the atmosphere including the workpiece and the dicing tape portion in which slack is eliminated by the light heating;
A workpiece dividing method.