TW201826373A - Splitting device including a work table, a frame holding device, a lifting device, a control device, and a shrinking device - Google Patents

Splitting device including a work table, a frame holding device, a lifting device, a control device, and a shrinking device Download PDF

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TW201826373A
TW201826373A TW106142561A TW106142561A TW201826373A TW 201826373 A TW201826373 A TW 201826373A TW 106142561 A TW106142561 A TW 106142561A TW 106142561 A TW106142561 A TW 106142561A TW 201826373 A TW201826373 A TW 201826373A
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wafer
tape
frame
interval
holding
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TW106142561A
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Chinese (zh)
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TWI734873B (en
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植木篤
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日商迪思科股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes

Abstract

An object of this invention is to precisely split a wafer without deteriorating the feasibility of picking up chips. A solution of this invention is a splitting device that splits a wafer, which is supported by a ring frame via a tape, by using a modified layer as a starting point by means of expansion of the tape. The splitting device is formed to have a work table, a frame holding device, a lifting device, a control device, and a shrinking device. The work table holds the wafer through a tape. The frame holding device is a ring frame that holds the periphery of the wafer. The lifting device causes the work table to be relatively close to and away from the frame holding device. The control device controls the lifting device to form predetermined intervals among the chips after the wafer is split. The shrinking device maintains the intervals among the chips at the predetermined intervals and then fixes the intervals among the chips by shrinking the slack tape between the outer circumference of the wafer and the inner circumference of the ring frame.

Description

分割裝置Dividing device

發明領域 本發明是有關於一種將晶圓分割成一個個的晶片的分割裝置。FIELD OF THE INVENTION The present invention relates to a slicing device that divides a wafer into individual wafers.

發明背景 以往,作為此種分割裝置而已知的是下述之分割裝置:將透過膠帶而被支持於環狀框架上之晶圓,藉由擴張膠帶,而沿著已形成於晶圓之分割起點來進行分割之裝置(參照例如專利文獻1-3)。在這些分割裝置中,是將晶圓保持於分割工作台上,並使環狀框架保持於環狀工作台上,且相對於環狀框架將晶圓相對地上推,藉此將膠帶朝徑方向擴張而將晶圓分割成一個個的晶片。分割後的晶片是在下一個步驟中,藉由拾取器(picker)等而從膠帶上被拾取。 先前技術文獻 專利文獻BACKGROUND OF THE INVENTION Conventionally, as such a singulation device, a singulation device is known. A wafer that is supported on a ring-shaped frame through an adhesive tape is expanded along the starting point of the slicing that has been formed on the wafer. A device for dividing (see, for example, Patent Documents 1-3). In these singulation apparatuses, the wafer is held on the slicing table, the ring frame is held on the ring table, and the wafer is pushed up relative to the ring frame, thereby pushing the tape in the radial direction. Expand and divide the wafer into individual wafers. In the next step, the divided wafer is picked up from the tape by a picker or the like. Prior Art Literature Patent Literature

專利文獻1:日本專利特開2016-004832號公報 專利文獻2:日本專利特開2007-027250號公報 專利文獻3:日本專利特開2015-204362號公報Patent Literature 1: Japanese Patent Laid-Open No. 2016-004832 Patent Literature 2: Japanese Patent Laid-Open No. 2007-027250 Patent Literature 3: Japanese Patent Laid-Open No. 2015-204362

發明概要 發明欲解決之課題 然而,為了分割晶片尺寸為較小之晶圓,必須將膠帶擴張得較大。當將膠帶擴張得較大時,會因晶片彼此之間隔過寬,而在下一個步驟中變得無法拾取晶片、或拾取時間變長。另一方面,雖然也考慮藉由抑制膠帶之擴張來縮小晶片彼此之間隔,以提升晶片的拾取性,但會無法適當地分割晶片尺寸為較小的晶圓。如此,出現了下述問題:當膠帶擴張得較大時,會在拾取上產生不良狀況,若抑制膠帶之擴張時,會無法適當地分割晶圓。SUMMARY OF THE INVENTION Problems to be Solved by the Invention However, in order to divide a wafer having a smaller wafer size, it is necessary to expand the adhesive tape to a large extent. When the tape is expanded to a large extent, the wafers are too wide apart from each other, so that the wafer cannot be picked up in the next step, or the pickup time becomes longer. On the other hand, although it is considered that the interval between the wafers is reduced by suppressing the expansion of the adhesive tape to improve the pickability of the wafers, the wafers with a smaller wafer size cannot be appropriately divided. In this way, a problem arises in that when the tape is expanded widely, a defect occurs in picking up, and if the expansion of the tape is suppressed, the wafer cannot be appropriately divided.

本發明是有鑒於所述問題點而作成的發明,其目的之一在於提供一種分割裝置,該分割裝置可以在不使晶片的拾取性惡化的情形下,確實地分割晶圓。 用以解決課題之手段The present invention has been made in view of the problems described above, and an object of the present invention is to provide a slicing device that can surely singulate a wafer without deteriorating the pick-up property of the wafer. Means to solve the problem

本發明之一態樣的分割裝置,是將形成有分割起點之晶圓貼附於將環狀框架之開口堵塞而貼附之膠帶上,而使該環狀框架、該膠帶與晶圓一體化而成之工件組(work set)的該膠帶進行擴張,而以該分割起點作為起點來分割晶圓,該分割裝置具備: 框架保持設備,保持該環狀框架; 工作台,具有保持面,該保持面是隔著該框架保持設備所保持之工件組的該膠帶來保持晶圓; 升降設備,使該工作台與該框架保持設備在相對於該保持面正交的方向上相對地接近及遠離; 控制設備,使該工作台與該框架保持設備朝相遠離之方向移動而擴張該膠帶,且以該分割起點為起點來分割晶圓之後,使該工作台與該框架保持設備朝相接近之方向移動而使相鄰之晶片靠近,並形成預先設定之縮窄的間隔;及 收縮設備,藉由該控制設備而形成該間隔,並以該保持面吸引保持已擴張之該膠帶而維持該間隔,且使該工作台與該框架保持設備更加接近,並使晶圓的外周與環狀框架的內周之間的已鬆弛的該膠帶收縮,而將相鄰之晶片的間隔固定。According to one aspect of the present invention, a singulation device is formed by attaching a wafer having a starting point for slicing to an adhesive tape that closes an opening of a ring frame, and integrates the ring frame, the tape, and the wafer. The tape of the formed work set is expanded, and the wafer is divided with the dividing starting point as a starting point. The dividing device includes: a frame holding device that holds the ring frame; a worktable having a holding surface; The holding surface is used to hold the wafer through the tape of the workpiece group held by the frame holding equipment; the lifting equipment makes the table and the frame holding equipment relatively close to and away from each other in a direction orthogonal to the holding surface ; Controlling the equipment, moving the table and the frame holding device away from each other to expand the tape, and after dividing the wafer with the dividing starting point as a starting point, the table and the frame holding device are brought closer to each other Move in a direction to bring adjacent wafers closer to each other to form a predetermined narrowing interval; and a shrinking device, which forms the interval by the control device, and attracts and holds the holding surface The tape is expanded to maintain the interval, and brings the table closer to the frame holding equipment, shrinks the slackened tape between the outer periphery of the wafer and the inner periphery of the ring frame, and adjacently The interval between the wafers is fixed.

根據此構成,在晶圓之分割時,是藉由使工作台與框架保持設備相遠離,而使膠帶擴張得較大,並以分割起點為起點來確實地分割晶圓。在晶圓的分割之後,是藉由使工作台與框架保持設備接近,來解除膠帶之擴張而將相鄰的晶片之間隔縮窄。並且,在相鄰的晶片之間隔已縮窄至預先設定的間隔之狀態下,可藉由去除晶圓之周圍的膠帶之鬆弛,來將晶片的間隔固定。據此,不會有在晶片的拾取位置上產生分散不均、或拾取時間變長之情形。如此一來,不會使晶片的拾取性惡化,且可以確實地分割晶圓。 發明效果According to this configuration, when the wafer is divided, the tape is expanded by moving the table and the frame holding equipment away from each other, and the wafer is surely divided from the starting point of the division. After the wafer is divided, the space between adjacent wafers is narrowed by releasing the expansion of the tape by bringing the table and the frame holding equipment closer. In addition, in a state where the interval between adjacent wafers has been narrowed to a preset interval, the interval between the wafers can be fixed by removing the slackness of the tape around the wafer. Accordingly, there is no possibility that dispersion unevenness occurs at the pickup position of the wafer or the pickup time becomes longer. In this way, the wafer pick-up property is not deteriorated, and the wafer can be surely divided. Invention effect

根據本發明,可在晶圓的分割之後將膠帶之擴張放鬆,並且去除晶圓之周圍的膠帶之鬆弛,以將相鄰的晶片之間隔固定在預先設定之間隔。據此,可以在不使晶片的拾取性惡化的情形下,確實地分割晶圓。According to the present invention, the expansion of the tape can be relaxed after the wafer is divided, and the slack of the tape around the wafer can be removed to fix the interval between adjacent wafers at a preset interval. This makes it possible to reliably divide the wafer without deteriorating the pick-up property of the wafer.

用以實施發明之形態 以下,參照附加圖式,說明本實施形態的分割裝置。圖1是本實施形態之分割裝置的立體圖。圖2是比較例之晶圓的分割動作及拾取動作之說明圖。再者,分割裝置並不限定於圖1所記載之構成,而是可進行適當變更的。Mode for Carrying Out the Invention Hereinafter, a division device according to this embodiment will be described with reference to the attached drawings. FIG. 1 is a perspective view of a dividing device according to this embodiment. FIG. 2 is an explanatory diagram of a wafer dividing operation and a picking operation of a comparative example. The division device is not limited to the configuration shown in FIG. 1, and may be appropriately changed.

如圖1所示,分割裝置1是構成為:將透過膠帶T而被支持在環狀框架F上之晶圓W,藉由膠帶T之擴張來分割成一個個的晶片C(參照圖3A)。又,分割裝置1是構成為:當解除膠帶T之擴張時,藉由熱收縮(heat shrink)來去除發生在晶圓W的外周與環狀框架F的內周之間的膠帶T之鬆弛。如此,僅對膠帶T被拉伸而鬆弛之處進行熱收縮,來維持晶片C之間隔,以免晶圓W分割後的晶片C彼此相接觸而破損。As shown in FIG. 1, the dividing device 1 is configured to divide the wafer W supported by the ring frame F through the adhesive tape T into individual wafers C by expanding the adhesive tape T (see FIG. 3A). . The slicing device 1 is configured to remove the slackness of the tape T occurring between the outer periphery of the wafer W and the inner periphery of the ring frame F by heat shrinking when the expansion of the tape T is released. In this way, only the portion where the tape T is stretched and slackened is thermally contracted to maintain the interval between the wafers C so as to prevent the wafers C after the wafers W from being in contact with each other and broken.

在晶圓W之正面設置有格子狀之分割預定線L,並在由分割預定線L所區劃出的各區域中,形成有各種器件(圖未示)。再者,晶圓W也可以是在矽,砷化鎵等半導體基板上形成有IC,LSI等器件的半導體晶圓,也可以是在陶瓷,玻璃,藍寶石系的無機材料基板上形成有LED等光器件的光器件晶圓。晶圓W是貼附在已被貼附於環狀框架F的膠帶T上,且是將已使晶圓W、環狀框架F與膠帶T一體化而成之工件組WS搬入分割裝置1。On the front side of the wafer W, a grid-like dividing plan line L is provided, and various devices (not shown) are formed in each area defined by the dividing plan line L. In addition, the wafer W may be a semiconductor wafer in which IC, LSI, and other devices are formed on a semiconductor substrate such as silicon or gallium arsenide, or an LED may be formed on a ceramic, glass, or sapphire-based inorganic material substrate. Optical device wafer for optical devices. The wafer W is attached to the tape T that has been attached to the ring frame F, and the workpiece group WS in which the wafer W, the ring frame F and the tape T are integrated is carried into the dividing device 1.

工件組WS之環狀框架F是藉由具有熱收縮性的膠帶T來將開口部堵塞,且在開口部之內側的膠帶T上貼附有晶圓W。在晶圓W的內部,形成有沿著分割預定線L之作為分割起點的改質層(圖未示)。再者,改質層是指藉由雷射的照射而使得晶圓W內部的密度、折射率、機械性強度和其他物理特性變得與周圍不同的狀態,且導致強度也比周圍低的區域。改質層亦可為例如,熔融處理區域、裂痕(crack)區域、絕緣破壞區域、折射率變化區域,也可以是混合了這些區域的區域。The ring frame F of the workpiece group WS is closed with an opening portion by a heat-shrinkable tape T, and a wafer W is attached to the tape T inside the opening portion. A modified layer (not shown) is formed inside the wafer W along the planned division line L as a division starting point. In addition, the modified layer refers to a state where the density, refractive index, mechanical strength, and other physical characteristics of the wafer W are different from those of the surroundings by the irradiation of the laser, and the areas where the strength is lower than the surroundings are also caused. . The modified layer may be, for example, a melt-processed region, a crack region, a dielectric breakdown region, a refractive index change region, or a region in which these regions are mixed.

又,在以下之說明中,雖然作為分割起點而以形成於晶圓W之內部的改質層來例示說明,但並不限定於此構成。分割起點只要是可成為晶圓W的分割時的起點即可,以例如雷射加工溝、切割溝、刻劃線(scribe line)來構成亦可。此外,膠帶T只要是具有伸縮性並且具有熱收縮性的膠帶即可,而不特別限定材質。再者,膠帶基材宜以例如聚烯烴(Polyolefin,PO)、聚氯乙烯(Polyvinyl Chloride,PVC)來形成。In the following description, although a modified layer formed inside the wafer W is exemplified as a starting point of division, the configuration is not limited to this. The starting point of division may be a starting point at the time of division of the wafer W, and may be constituted by, for example, a laser processing groove, a dicing groove, or a scribe line. The tape T is not particularly limited as long as it is a tape having elasticity and heat shrinkability. Moreover, the tape substrate is preferably formed of, for example, Polyolefin (PO), Polyvinyl Chloride (PVC).

在分割裝置1上配置有工作台10,該工作台10可隔著工件組WS之膠帶T來吸引保持晶圓W,且在工作台10之周圍配置有保持工件組WS之環狀框架F的框架保持設備20。工作台10是由複數個支柱部11所支持,且在工作台10之上表面配置有多孔質之多孔板12。藉由此多孔質之多孔板12,而在工作台10的上表面形成有吸引保持晶圓W之保持面13。在保持面13上,是通過工作台10內之流路而連接於吸引源16(參照圖4A),並藉由於保持面13產生之負壓來吸引保持晶圓W。A table 10 is arranged on the dividing device 1. The table 10 can suck and hold the wafer W through the tape T of the work group WS, and a ring frame F holding the work group WS is arranged around the work table 10. Frame holding device 20. The table 10 is supported by a plurality of pillar portions 11, and a porous perforated plate 12 is arranged on the upper surface of the table 10. A holding surface 13 for holding the wafer W is formed on the upper surface of the table 10 by the porous porous plate 12. The holding surface 13 is connected to the suction source 16 (see FIG. 4A) through a flow path in the table 10, and sucks and holds the wafer W by the negative pressure generated by the holding surface 13.

又,從保持面13連通到吸引源16的流路上設有開關閥14(參照圖4A),並可藉由開關閥14來切換保持面13對晶圓W的吸引保持與吸引解除。在工作台10之外周邊緣,涵蓋全周而可旋轉地設有複數個滾輪部15。複數個滾輪部15可在已將晶圓W保持於保持面13之狀態下,從下側旋轉接觸於晶圓W之周圍的膠帶T。藉由複數個滾輪部15旋轉接觸於膠帶T,可抑制在膠帶T之擴張時在工作台10之外周邊緣產生的膠帶T之磨擦。In addition, an on-off valve 14 (see FIG. 4A) is provided on the flow path that communicates from the holding surface 13 to the suction source 16, and the on-off valve 14 can be used to switch the suction holding of the wafer W by the holding surface 13 and the release of the suction. A plurality of roller portions 15 are rotatably provided on the outer peripheral edge of the table 10 so as to cover the entire periphery. The plurality of roller portions 15 can rotate to contact the tape T around the wafer W from the lower side while the wafer W is held on the holding surface 13. By the plurality of roller portions 15 rotatingly contacting the tape T, it is possible to suppress the friction of the tape T generated on the outer peripheral edge of the table 10 when the tape T is expanded.

框架保持設備20是形成以蓋板(cover plate)22從上方將載置工作台21上之環狀框架F夾入,以將環狀框架F保持於載置工作台21上。在載置工作台21及蓋板 22之中央,分別形成有直徑比工作台10更大的圓形開口23、24。當已將蓋板22覆蓋於載置工作台21上時,是藉由蓋板22與載置工作台21來保持環狀框架F,並且從載置工作台21及蓋板22之圓形開口23、24,將晶圓W與膠帶T之一部分露出於外部。The frame holding device 20 is formed by sandwiching a ring frame F on the mounting table 21 with a cover plate 22 from above to hold the ring frame F on the mounting table 21. At the center of the mounting table 21 and the cover plate 22, circular openings 23 and 24 having a larger diameter than the table 10 are formed, respectively. When the cover plate 22 has been covered on the mounting table 21, the ring frame F is held by the cover plate 22 and the mounting table 21, and the circular openings of the mounting table 21 and the cover plate 22 are maintained. 23 and 24, exposing a part of the wafer W and the tape T to the outside.

框架保持設備20是在已將蓋板22覆蓋於載置工作台21上之環狀框架F的狀態下,藉由例如圖未示之夾具部來將蓋板22固定於載置工作台21。框架保持設備20是被支持於升降設備26上,該升降設備26是使工作台10與框架保持設備20在相對於保持面13正交之方向上相對地遠離及接近。升降設備26是以4個電動汽缸所構成,該等4個電動汽缸是支持載置工作台21之四個角落。藉由控制升降設備26之汽缸桿27的突出量,可調節工作台10上之晶圓W與框架保持設備20之距離。The frame holding device 20 fixes the cover plate 22 to the mounting table 21 in a state in which the cover frame 22 has covered the ring-shaped frame F on the mounting table 21 by, for example, a clamp portion (not shown). The frame holding device 20 is supported by a lifting device 26 which relatively moves and approaches the table 10 and the frame holding device 20 in a direction orthogonal to the holding surface 13. The lifting device 26 is composed of four electric cylinders which support the four corners of the table 21. The distance between the wafer W on the table 10 and the frame holding device 20 can be adjusted by controlling the protrusion amount of the cylinder rod 27 of the lifting device 26.

在框架保持設備20之上方設置有收縮設備30,該收縮設備30是用以使於膠帶T產生之鬆弛收縮。收縮設備30是設置於晶圓W之中心軸上,且以包夾晶圓W之中心而相向的方式在旋繞臂31之兩端配置有一對加熱器32。加熱器32是構成為例如將遠紅線進行點(spot)照射,且該遠外線是將難以被金屬材料吸收之3μm~25μm設為峰值波形。藉此,可抑制裝置各部分之加熱,而將晶圓W的外周與環狀框架F的內周之間的膠帶T之鬆弛部分地加熱來進行熱收縮。A shrinking device 30 is provided above the frame holding device 20. The shrinking device 30 is used to shrink and loosen the tape T. The shrinking device 30 is provided on the central axis of the wafer W, and a pair of heaters 32 are arranged at both ends of the winding arm 31 so as to sandwich the center of the wafer W and face each other. The heater 32 is configured, for example, to irradiate a far-red line with a spot, and the far-out line has a peak waveform of 3 μm to 25 μm, which is difficult to be absorbed by a metal material. Thereby, heating of each part of the apparatus can be suppressed, and the slack portion of the tape T between the outer periphery of the wafer W and the inner periphery of the ring frame F can be partially heated to perform heat shrinkage.

又,於收縮設備30之旋繞臂31上設置有上下動作部33及旋轉馬達34,該上下動作部33是使一對加熱器32上下移動,該旋轉馬達34是使一對加熱器32繞著晶圓W之中心軸地旋轉。上下動作部33是配合框架保持設備20之升降動作,來調整一對加熱器32對膠帶T之高度。旋轉馬達34是使一對加熱器32旋繞,以涵蓋全周而加熱晶圓W的周圍的膠帶T之鬆弛。可藉由上下動作部33及旋轉馬達34,將一對加熱器32相對於膠帶T適當地定位,藉此良好地加熱晶圓W之周圍的膠帶T。In addition, the winding arm 31 of the shrinking device 30 is provided with an up-and-down operation portion 33 that moves a pair of heaters 32 up and down and a rotation motor 34 that rotates the pair of heaters 32 The center of the wafer W is pivoted. The up-and-down operation portion 33 adjusts the height of the pair of heaters 32 to the tape T in cooperation with the ascending and descending operation of the frame holding device 20. The rotation motor 34 rotates a pair of heaters 32 so as to cover the entire periphery and heat the slack of the tape T around the wafer W. The pair of heaters 32 can be appropriately positioned with respect to the adhesive tape T by the up-and-down operation unit 33 and the rotation motor 34, so that the adhesive tape T around the wafer W can be heated well.

又,在分割裝置1中設置有統合控制裝置各部的控制設備40。控制設備40是以執行各種處理的處理器及記憶體等所構成。記憶體是因應用途而由ROM(唯讀記憶體(Read Only Memory))、RAM(隨機存取記憶體(Random Access Memory))等的一個或複數個儲存媒體所構成。可藉由控制設備40將工作台10與框架保持設備20相對移動而控制膠帶T之擴張動作,並且以收縮設備30之一對加熱器32來去除膠帶T之鬆弛以控制膠帶T之收縮動作。此外,可藉由控制設備40控制後述之晶片間隔的調整處理。In addition, the division device 1 is provided with a control device 40 that integrates each unit of the control device. The control device 40 is composed of a processor, a memory, and the like that execute various processes. The memory is composed of one or a plurality of storage media such as a ROM (Read Only Memory), a RAM (Random Access Memory), and the like depending on the application. The expansion movement of the tape T can be controlled by the control device 40 moving the table 10 and the frame holding device 20 relatively, and the slack of the tape T can be removed by using one of the shrinking devices 30 to the heater 32 to control the shrinking movement of the tape T. In addition, the adjustment processing of a wafer interval described later can be controlled by the control device 40.

在如此之分割裝置1中,是將框架保持設備20以已保持環狀框架F的狀態來進行下降,藉此將工作台10從蓋板22及載置工作台21的圓形開口23、24突出。藉由相對於框架保持設備20來將工作台10相對地上推,可朝徑方向擴張膠帶T而將晶圓W分割成一個個的晶片C。又,當將框架保持設備20上升而解除膠帶T之擴張時,會放鬆膠帶T的張力。此時,可藉由加熱器32將膠帶T加熱而進行熱收縮,以免晶圓W之周圍的膠帶T鬆弛。In such a dividing device 1, the frame holding device 20 is lowered in a state in which the ring frame F has been held, whereby the table 10 is removed from the cover plate 22 and the circular openings 23 and 24 on which the table 21 is placed. protruding. By pushing up the table 10 relative to the frame holding device 20, the tape T can be expanded in the radial direction to divide the wafer W into individual wafers C. When the frame holding device 20 is raised to release the expansion of the tape T, the tension of the tape T is relaxed. At this time, the tape T can be heated and contracted by the heater 32 to prevent the tape T around the wafer W from slackening.

另外,如圖2所示,在一般的分割裝置61中,每當分割晶圓W時,均會於晶片C之間隔產生分散不均,且必須在下一個步驟中以拾取器65來拾取晶片C時,辨識晶片C的位置。又,為了分割晶片尺寸為較小的晶圓W,必須將膠帶T擴張得較大,以免晶片C彼此相擦撞而破損,而使以拾取器65拾取晶片C時的移動距離變長,並增加拾取時間。此外,當將晶片C定位在拾取器65的移動範圍外時,會無法拾取晶片C。In addition, as shown in FIG. 2, in the general dividing device 61, whenever wafer W is divided, uneven dispersion occurs at the interval between wafers C, and wafer C must be picked up by picker 65 in the next step. At this time, the position of the wafer C is identified. In addition, in order to divide the wafer W into a smaller wafer W, the tape T must be enlarged to prevent the wafers C from colliding with each other and broken, and the moving distance when the wafer C is picked up by the picker 65 becomes longer, and Increase pickup time. In addition, when the wafer C is positioned outside the moving range of the picker 65, the wafer C cannot be picked up.

於是,在本實施形態的分割裝置1(參照圖1)中,是在使膠帶T擴張得較大而將晶圓W分割成一個個的晶片C之後,放鬆膠帶T以將相鄰的晶片C之間隔形成為預先設定之間隔。在此情況下,一邊藉由已設置在工作台10的上方之外周拍攝設備45來拍攝分割後之晶圓W的外周,一邊使拍攝圖像之晶圓W的外周位置與規定之外周位置一致,來調整晶片C之間隔。並且,藉由熱收縮來去除晶圓W之周圍的膠帶T之鬆弛,以形成為將相鄰之晶片C以適合於拾取動作之間隔來固定。Therefore, in the singulation device 1 (refer to FIG. 1) of this embodiment, after the tape T is expanded and the wafer W is divided into individual wafers C, the tape T is loosened to separate the adjacent wafers C. The interval is formed in advance. In this case, while the outer periphery of the divided wafer W is imaged by the imaging device 45 provided above the table 10, the outer periphery position of the imaged wafer W is aligned with the predetermined outer periphery position. To adjust the interval of the chip C. Then, the slackness of the tape T around the wafer W is removed by thermal shrinkage, so that the adjacent wafers C are fixed at intervals suitable for the pickup operation.

以下,參照圖3,來說明由控制設備進行的晶片間隔的調整處理。圖3是顯示本實施形態之晶片間隔的調整處理之圖。Hereinafter, a wafer gap adjustment process performed by the control device will be described with reference to FIG. 3. FIG. 3 is a diagram showing a wafer gap adjustment process in this embodiment.

如圖3A所示,當相對於框架保持設備20來將工作台10相對地上推時,會擴張膠帶T而將晶圓W分割成一個個的晶片C。藉由將分割後之晶圓W擴展至外徑D1,可在相鄰之晶片C之間形成間隔S1。在晶圓W之分割後,是將框架保持設備20靠近於工作台10來解除膠帶T之擴張。藉此,藉由膠帶T之彈性回復而使分割後之晶圓W的外徑開始變小,且相鄰之晶片C逐漸地靠近,而將相鄰之晶片C的間隔縮窄。As shown in FIG. 3A, when the table 10 is pushed up relatively to the frame holding device 20, the tape T is expanded and the wafer W is divided into individual wafers C. By extending the divided wafer W to the outer diameter D1, a space S1 can be formed between adjacent wafers C. After the wafer W is divided, the frame holding device 20 is brought close to the table 10 to release the expansion of the tape T. As a result, the outer diameter of the divided wafer W starts to decrease due to the elastic recovery of the tape T, and the adjacent wafers C gradually approach to narrow the interval between the adjacent wafers C.

此時,在工作台10之上方,設置有外周拍攝設備45,並藉由外周拍攝設備45來拍攝分割後之晶圓W的外周。外周拍攝設備45是連接於控制設備40,並從外周拍攝設備45將晶圓W之外周的拍攝圖像輸入到控制設備40。在控制設備40中,是相對於拍攝圖像來施行邊緣檢測處理等之各種圖像處理,並從拍攝圖像之亮度差等來檢測晶圓W之外周位置。如上所述,在晶圓W之分割時可擴張膠帶T,並可藉由外周拍攝設備45檢測外周位置P1來作為晶圓W之外周位置。At this time, an outer periphery photographing device 45 is provided above the table 10, and the outer periphery of the divided wafer W is photographed by the outer periphery photographing device 45. The peripheral imaging device 45 is connected to the control device 40 and inputs a captured image of the outer periphery of the wafer W from the peripheral imaging device 45 to the control device 40. In the control device 40, various image processing such as edge detection processing is performed with respect to the captured image, and the outer peripheral position of the wafer W is detected from the brightness difference and the like of the captured image. As described above, the tape T can be expanded during the division of the wafer W, and the peripheral position P1 can be detected by the peripheral imaging device 45 as the peripheral position of the wafer W.

如圖3B所示,當藉由框架保持設備20相對於工作台10之接近,而將以外周拍攝設備45所拍攝之晶圓W之外周移動至外周位置P2時,可將膠帶T吸引保持於工作台10之保持面13上來維持晶片C之間隔。此時,晶圓W縮窄至外徑D2,並可在相鄰的晶片C之間形成預先設定之間隔S2。再者,間隔S2是適合於下一個步驟之拾取動作的間隔。如此,以外周拍攝設備45來監控(monitor)因應於相鄰的晶片C之間隔而變化的晶圓W之外周位置,並且一邊間接地測量晶片C之間隔一邊調整晶片C之間隔。As shown in FIG. 3B, when the outer periphery of the wafer W photographed by the outer periphery imaging device 45 is moved to the outer periphery position P2 by the proximity of the frame holding device 20 with respect to the table 10, the tape T can be attracted and held at The holding surface 13 of the table 10 is used to maintain the interval between the wafers C. At this time, the wafer W is narrowed to the outer diameter D2, and a predetermined interval S2 can be formed between adjacent wafers C. The interval S2 is an interval suitable for the pickup operation in the next step. In this way, the peripheral imaging device 45 monitors the peripheral position of the wafer W that changes according to the interval between adjacent wafers C, and adjusts the interval between the wafers C while measuring the interval between the wafers C indirectly.

再者,如圖3C所示,晶圓W之外周位置P2是藉由連接於控制設備40(參照圖3B)之計算設備46(參照圖1)而事先被計算。更詳細地說,是藉由晶圓W之晶片尺寸而決定晶圓W之分割預定線的數量,且僅以分割預定線之數量,來計算將晶片C擴展至間隔S2時的晶圓W的外徑D2。可根據此晶圓W之外徑D2來計算晶圓W之對應於晶片C的間隔S2之外周位置P2。再者,計算設備46是與控制設備40同樣地由實行各種處理之處理器或記憶體等所構成。Moreover, as shown in FIG. 3C, the outer peripheral position P2 of the wafer W is calculated in advance by a computing device 46 (see FIG. 1) connected to the control device 40 (see FIG. 3B). In more detail, the number of planned division lines of the wafer W is determined by the wafer size of the wafer W, and only the number of the predetermined division lines is used to calculate the wafer W when the wafer C is extended to the interval S2. Outside diameter D2. The outer peripheral position P2 of the wafer S corresponding to the interval S2 of the wafer C can be calculated based on the outer diameter D2 of the wafer W. It should be noted that the computing device 46 is composed of a processor, a memory, and the like that perform various processes similarly to the control device 40.

又,如圖3D所示,在晶圓W之外周位置P2設定如一點鏈線所示之容許範圍R亦可。在此情況下,當藉由框架保持設備20相對於工作台10之接近,而使以外周拍攝設備45所拍攝之晶圓W的外周處於容許範圍R內時,會判斷為相鄰之晶片C的間隔與預先設定之間隔S2一致。當如此進行而調整晶片C之間隔時,是藉由熱收縮來去除晶圓W的周圍之膠帶T的鬆弛,藉此可將晶片C以維持在預先設定之間隔S2的狀態來固定。Further, as shown in FIG. 3D, an allowable range R indicated by a one-dot chain line may be set at the outer peripheral position P2 of the wafer W. In this case, when the outer periphery of the wafer W captured by the outer-peripheral imaging device 45 is within the allowable range R due to the proximity of the frame holding device 20 with respect to the table 10, it is judged as an adjacent wafer C The interval is the same as the preset interval S2. When the interval between the wafers C is adjusted in this way, the slackness of the tape T around the wafer W is removed by thermal shrinkage, so that the wafer C can be fixed while maintaining the state at a predetermined interval S2.

接著,參照圖4,來說明關於由本實施形態之分割裝置所進行的分割動作。圖4是由本實施形態之分割裝置進行的分割動作的說明圖。各自顯示的是,圖4A是分割步驟之一例,圖4B是晶片間隔調整步驟之一例,圖4C是膠帶吸引保持步驟之一例,圖4D是膠帶收縮步驟之一例。Next, a division operation performed by the division device according to this embodiment will be described with reference to FIG. 4. FIG. 4 is an explanatory diagram of a dividing operation performed by the dividing device according to this embodiment. 4A is an example of a dividing step, FIG. 4B is an example of a wafer interval adjustment step, FIG. 4C is an example of a tape suction holding step, and FIG. 4D is an example of a tape shrinking step.

如圖4A所示,首先可實施分割步驟。在分割步驟中,是隔著膠帶T將晶圓W載置於工作台10上,且將晶圓W之周圍的環狀框架F保持於框架保持設備20。此時,關閉開關閥14,而將來自吸引源16之對工作台10的吸引力遮斷。並且,藉由控制設備40之控制來將框架保持設備20降下,並使工作台10與框架保持設備20相遠離。藉此,朝放射方向擴張膠帶T,並且透過膠帶T以強度已降低之改質層作為起點來將晶圓W分割成一個個的晶片C。As shown in FIG. 4A, the segmentation step may be performed first. In the dividing step, the wafer W is placed on the table 10 with the tape T therebetween, and the ring frame F around the wafer W is held by the frame holding device 20. At this time, the on-off valve 14 is closed, and the attraction force from the suction source 16 to the table 10 is blocked. Then, the frame holding device 20 is lowered by the control of the control device 40, and the table 10 and the frame holding device 20 are separated from each other. Thereby, the tape T is expanded in the radial direction, and the wafer W is divided into individual wafers C through the tape T using the modified layer having a reduced strength as a starting point.

如圖4B所示,可在分割步驟之後實施晶片間隔調整步驟。在晶片間隔調整步驟中,是藉由控制設備40之控制,而使框架保持設備20上升,並使工作台10與框架保持設備20相接近。藉此,可解除膠帶T之擴張,並藉由膠帶T之彈性回復來使相鄰的晶片C逐漸地靠近。此時,將外周拍攝設備45定位在工作台10之上方,並藉由外周拍攝設備45來拍攝已分割之晶圓W的外周。可從此拍攝圖像中檢測晶圓W的外周位置,並與藉由計算設備46(參照圖1)而預先計算出的晶圓W的外周位置進行比較。As shown in FIG. 4B, a wafer interval adjustment step may be performed after the singulation step. In the wafer interval adjustment step, the frame holding device 20 is raised by the control of the control device 40, and the table 10 and the frame holding device 20 are brought close to each other. Thereby, the expansion of the tape T can be released, and the adjacent wafers C can be gradually approached by the elastic recovery of the tape T. At this time, the peripheral imaging device 45 is positioned above the table 10, and the periphery of the divided wafer W is photographed by the peripheral imaging device 45. The peripheral position of the wafer W can be detected from this captured image and compared with the peripheral position of the wafer W calculated in advance by the computing device 46 (see FIG. 1).

藉由控制設備40,使工作台10與框架保持設備20接近,直到由拍攝圖像所檢測出之晶圓W的外周位置,與已預先計算之晶圓W的外周位置一致為止。可將相鄰的晶片C逐漸地靠近,而將晶片C之間隔調整成預先設定之間隔。由於在晶片C之間隔調整時是將開關閥14關閉的,因此不會有因工作台10而妨礙膠帶T之變形的情形。又,藉由工作台10與框架保持設備20之接近,可將晶圓W的外周與環狀框架F的內周之間的膠帶T之張力放鬆,而在晶圓W的周圍的膠帶T上產生鬆弛。By the control device 40, the table 10 and the frame holding device 20 are brought close to each other until the outer peripheral position of the wafer W detected by the captured image coincides with the outer peripheral position of the wafer W that has been calculated in advance. The adjacent wafers C can be gradually approached, and the interval between the wafers C can be adjusted to a preset interval. Since the on-off valve 14 is closed when the interval between the wafers C is adjusted, there is no possibility that the deformation of the tape T is prevented by the table 10. In addition, by the proximity of the table 10 and the frame holding device 20, the tension of the tape T between the outer periphery of the wafer W and the inner periphery of the ring frame F can be relaxed, and the tape T around the wafer W can be relaxed. Produces slack.

如圖4C所示,可在晶片間隔調整步驟之後實施膠帶吸引保持步驟。在膠帶吸引保持步驟中,當藉由控制設備40而在晶片C之間形成預先設定之間隔時,可開啟開關閥14而在工作台10上產生吸引力。由於藉由工作台10並隔著膠帶T來吸引保持晶片C,因此不會有膠帶T因彈性回復而收縮之情形,而可將相鄰之晶片C隔著預先設定之間隔來維持。又,可將收縮設備30定位於晶圓W之上方,且可藉由旋轉馬達34使一對加熱器32旋繞而開始進行膠帶T之鬆弛的熱收縮。As shown in FIG. 4C, the tape suction holding step may be performed after the wafer interval adjusting step. In the tape suction holding step, when a predetermined interval is formed between the wafers C by the control device 40, the on-off valve 14 can be opened to generate an attractive force on the table 10. Since the wafer C is attracted and held by the table 10 with the tape T interposed therebetween, there is no case where the tape T shrinks due to the elastic recovery, and adjacent wafers C can be maintained at a predetermined interval. In addition, the shrinking device 30 can be positioned above the wafer W, and the pair of heaters 32 can be rotated by the rotation motor 34 to start the thermal shrinkage of the tape T for relaxation.

如圖4D所示,可在膠帶吸引保持步驟之後實施膠帶收縮步驟。在膠帶收縮步驟中,是藉由控制設備40使工作台10與框架保持設備20更加接近,藉此會產生晶圓W的外周與環狀框架F的內周之間的膠帶T的鬆弛。此時,配合框架保持設備20之移動,並一邊藉由上下動作部33來調整加熱器32的高度,一邊藉由一對加熱器32將晶圓W之周圍的膠帶T之鬆弛進行熱收縮。由於僅將晶圓W之周圍的膠帶T進行熱收縮,因此,即使解除工作台10之吸引保持,也可將相鄰之晶片C的間隔以已維持的狀態固定。As shown in FIG. 4D, the tape shrinking step may be performed after the tape suction holding step. In the tape shrinking step, the table 10 and the frame holding device 20 are brought closer to each other by the control device 40, thereby causing the tape T to relax between the outer periphery of the wafer W and the inner periphery of the ring frame F. At this time, while the height of the heater 32 is adjusted by the up-and-down operation portion 33 in accordance with the movement of the frame holding device 20, the pair of heaters 32 is used to thermally shrink the slack of the tape T around the wafer W. Since only the tape T around the wafer W is heat-shrinked, the interval between adjacent wafers C can be fixed in a maintained state even if the suction holding of the table 10 is released.

並且,在膠帶收縮步驟之後,是關閉開關閥14,並解除由工作台10進行的膠帶T的吸引,而可進行工件組WS之搬送。如此,由於在晶圓W之分割後,將相鄰之晶片C的間隔固定在預先設定之間隔,因此不會有晶片C之間隔過度變寬的情形,而可以在下一個步驟之拾取動作時,縮短拾取器之移動距離並減少拾取時間。又,由於在晶圓W之分割後不會產生晶片C之分散不均,因此可使拾取器依照規定之動作程式作動,藉此可適當地拾取所有的晶片C。After the tape shrinking step, the on-off valve 14 is closed, and the suction of the tape T by the table 10 is released, so that the workpiece group WS can be transferred. In this way, since the interval between adjacent wafers C is fixed at a preset interval after the wafer W is divided, the interval between wafers C will not be excessively widened, and it can be used in the next step of the picking operation. Reduce the moving distance of the picker and reduce the picking time. In addition, since there is no uneven dispersion of the wafers C after the wafer W is divided, the picker can be operated in accordance with a predetermined operation program, and all the wafers C can be appropriately picked up.

如以上,在本實施形態之分割裝置1中,是藉由在晶圓W之分割時使工作台10與框架保持設備20相遠離,而可將膠帶T擴張得較大,並以改質層為起點來確實地分割晶圓W。在晶圓W之分割後,是藉由使工作台10與框架保持設備20相接近,而可解除膠帶T之擴張,並使相鄰之晶片C的間隔縮窄。並且,在已將相鄰之晶片C的間隔縮窄至預先設定的間隔之狀態下,可藉由去除晶圓W之周圍的膠帶T的鬆弛來固定晶片C之間隔。據此,不會有在晶片C之拾取位置上產生分散不均、或拾取時間變長之情形。如此,可在不使晶片C之拾取性惡化的情形下,確實地分割晶圓W。As described above, in the dividing device 1 of the present embodiment, by separating the table 10 and the frame holding device 20 from each other when the wafer W is divided, the tape T can be expanded to a large extent and the modified layer can be used. As a starting point, the wafer W is surely divided. After the wafer W is divided, the table 10 and the frame holding device 20 are brought close to each other to release the expansion of the tape T and narrow the interval between adjacent wafers C. In addition, in a state where the interval between the adjacent wafers C has been narrowed to a predetermined interval, the interval between the wafers C can be fixed by removing the slack of the tape T around the wafer W. Accordingly, there is no case where uneven dispersion occurs at the pickup position of the wafer C or the pickup time becomes long. In this manner, the wafer W can be surely divided without deteriorating the pick-up property of the wafer C.

再者,在本實施形態中,雖然是形成為拍攝已分割之晶圓的外周位置,並以晶圓之外周位置為基準來調整相鄰之晶片的間隔之構成,但並不限定於此構成。只要是可將相鄰之晶片的間隔調整成預先設定之間隔的構成即可,以任何方式調整晶片的間隔皆可。例如,亦可形成為一邊拍攝已分割之晶圓,以從拍攝圖像中測量相鄰之晶片的間隔,一邊調整晶片之間隔的構成。In addition, in this embodiment, although the structure is formed to image the outer peripheral position of the divided wafer and the interval between adjacent wafers is adjusted based on the outer peripheral position of the wafer, it is not limited to this configuration. . It is only necessary to have a configuration in which the interval between adjacent wafers can be adjusted to a preset interval, and the interval between wafers can be adjusted in any manner. For example, a configuration may be adopted in which the divided wafers are photographed, and the interval between adjacent wafers is measured from the photographed image, while the interval between the wafers is adjusted.

具體地說,是如圖5A所示,當藉由膠帶T之擴張而分割晶圓W時,是在相鄰之晶片C之間形成間隔S1。在晶圓之分割後,是解除膠帶T之擴張,並藉由膠帶T之彈性回復來使相鄰之晶片C逐漸地靠近。此時,在工作台10之上方設置有拍攝設備48,並藉由拍攝設備48來拍攝分割後之晶圓W。於拍攝設備48上連接有測量設備49,且可對從拍攝設備48輸入之拍攝圖像施行各種圖像處理,並可藉由測量設備49來測量相鄰之晶片C的間隔。Specifically, as shown in FIG. 5A, when the wafer W is divided by the expansion of the tape T, a space S1 is formed between adjacent wafers C. After the wafer is divided, the expansion of the tape T is released, and the adjacent wafers C are gradually approached by the elastic recovery of the tape T. At this time, an imaging device 48 is provided above the table 10, and the divided wafer W is imaged by the imaging device 48. A measuring device 49 is connected to the photographing device 48, and various image processing can be performed on a captured image input from the photographing device 48, and the interval between adjacent wafers C can be measured by the measuring device 49.

並且,如圖5B所示,當藉由框架保持設備20對工作台10之接近,而使測量設備49所測定到之晶片C的間隔與預先設定之間隔S2一致時,會藉由工作台10來吸引保持膠帶T以維持晶片C之間隔。如此,以拍攝設備48來監控相鄰之晶片C的間隔,並且一邊直接地測量晶片C的間隔,一邊調整晶片C的間隔。再者,測量設備49是與控制設備40同樣地,由實行各種處理之處理器或記憶體等所構成。Moreover, as shown in FIG. 5B, when the frame holding device 20 approaches the table 10 and the interval between the wafer C measured by the measuring device 49 and the preset interval S2 are consistent, the table 10 is used. To attract the holding tape T to maintain the interval between the wafers C. In this way, the interval between adjacent wafers C is monitored by the imaging device 48, and the interval between wafers C is adjusted while directly measuring the interval between wafers C. The measurement device 49 is configured by a processor, a memory, or the like that executes various processes in the same manner as the control device 40.

又,在本實施形態中,雖然是形成升降設備使框架保持設備相對於工作台升降之構成,但並不限定於此構成。只要升降設備是可使工作台與框架保持設備相對地接近及遠離之構成即可,例如,亦可形成為使工作台相對於框架保持設備升降之構成。又,升降設備並不限定於電動汽缸,以其他的致動器(actuator)來構成亦可。In addition, in this embodiment, although the structure which raises and lowers a frame holding facility with respect to a table is formed, it is not limited to this structure. As long as the lifting device is configured to allow the table and the frame holding device to be relatively close to and away from each other, for example, it may be configured to lift and lower the table relative to the frame holding device. The lifting device is not limited to an electric cylinder, and may be configured by other actuators.

又,在本實施形態中,外周拍攝設備只要是可拍攝晶圓之外周的構成即可,亦可使用例如電荷耦合元件(Charged Coupled Device,CCD)、互補式金屬氧化物半導體(Complementary Metal Oxide Semiconductor,CMOS)等之拍攝元件。又,變形例之拍攝設備只要是可拍攝晶圓之構成即可,亦可為例如使用CCD、CMOS等之拍攝元件。Further, in this embodiment, the peripheral imaging device may be configured to image the outer periphery of a wafer, and for example, a Charge Coupled Device (CCD) or a Complementary Metal Oxide Semiconductor may be used. , CMOS) and other imaging elements. In addition, the imaging device of the modification may be a structure capable of imaging a wafer, and may be an imaging element using a CCD, CMOS, or the like, for example.

又,雖然已說明了本發明之實施形態,但作為本發明之其他實施形態,亦可為將上述實施形態及變形例整體地或部分地組合而成之形態。In addition, although the embodiment of the present invention has been described, as another embodiment of the present invention, a form in which the above-mentioned embodiment and modification examples are combined in whole or in part may be used.

又,本發明之實施形態並不限定於上述之實施形態及變形例,且亦可在不脫離本發明之技術思想的主旨的範圍內進行各種變更、置換、變形。此外,若能經由技術之進步或衍生之其他技術而以其他的方式來實現本發明之技術思想的話,亦可使用該方法來實施。從而,專利請求的範圍涵蓋了可包含在本發明之技術思想範圍內的所有的實施形態。In addition, the embodiment of the present invention is not limited to the above-mentioned embodiments and modifications, and various changes, replacements, and modifications can be made without departing from the gist of the technical idea of the present invention. In addition, if the technical idea of the present invention can be realized in other ways through technological progress or other derived technologies, this method can also be used for implementation. Therefore, the scope of the patent claim covers all embodiments that can be included in the scope of the technical idea of the present invention.

又,在本實施形態中,雖然針對適用於分割裝置之構成來說明本發明,但亦可為適用於適當地擴張膠帶之其他的擴張(expand)裝置。 産業上之可利用性In addition, in the present embodiment, the present invention will be described with respect to a configuration suitable for a dividing device, but it may be another expansion device suitable for appropriately expanding an adhesive tape. Industrial availability

如以上所說明地,本發明具有可以在不使晶片的拾取性惡化的情形下,確實地分割晶圓之效果,尤其對於分割半導體晶圓之分割裝置特別有用。As described above, the present invention has an effect that the wafer can be reliably divided without deteriorating the pick-up property of the wafer, and is particularly useful for a dividing device for dividing a semiconductor wafer.

1、61‧‧‧分割裝置1. 61‧‧‧ split device

10‧‧‧工作台10‧‧‧Workbench

11‧‧‧支柱部11‧‧‧ pillar

12‧‧‧多孔板12‧‧‧ multi-well plate

13‧‧‧保持面13‧‧‧ keep face

14‧‧‧開關閥14‧‧‧On-off valve

15‧‧‧滾輪部15‧‧‧Roller Department

16‧‧‧吸引源16‧‧‧ Attraction source

20‧‧‧框架保持設備20‧‧‧Frame holding equipment

21‧‧‧載置工作台21‧‧‧ Loading table

22‧‧‧蓋板22‧‧‧ Cover

23、24‧‧‧圓形開口23, 24‧‧‧ round opening

26‧‧‧升降設備26‧‧‧Lifting equipment

27‧‧‧汽缸桿27‧‧‧Cylinder rod

30‧‧‧收縮設備30‧‧‧ Shrinking Equipment

31‧‧‧旋繞臂31‧‧‧ spiral arm

32‧‧‧加熱器32‧‧‧heater

33‧‧‧上下動作部33‧‧‧Up and down action section

34‧‧‧旋轉馬達34‧‧‧Rotary motor

40‧‧‧控制設備40‧‧‧Control equipment

45‧‧‧外周拍攝設備45‧‧‧ peripheral photography equipment

46‧‧‧計算設備46‧‧‧ Computing Equipment

48‧‧‧拍攝設備48‧‧‧ shooting equipment

49‧‧‧測量設備49‧‧‧ measuring equipment

51‧‧‧改質層(分割起點)51‧‧‧Modified layer (start of segmentation)

65‧‧‧拾取器65‧‧‧ Picker

F‧‧‧環狀框架F‧‧‧ ring frame

T‧‧‧膠帶T‧‧‧Tape

C‧‧‧晶片C‧‧‧Chip

W‧‧‧晶圓W‧‧‧ Wafer

WS‧‧‧工件組WS‧‧‧Article group

L‧‧‧分割預定線L‧‧‧ divided scheduled line

D1、D2‧‧‧外徑D1, D2‧‧‧

S1、S2‧‧‧間隔S1, S2‧‧‧ interval

P1、P2‧‧‧外周位置P1, P2‧‧‧ peripheral position

R‧‧‧容許範圍R‧‧‧Allowable range

圖1是本實施形態之分割裝置的立體圖。 圖2是比較例之晶圓的分割動作及拾取動作之說明圖。 圖3A-圖3D是顯示本實施形態之晶片間隔的調整處理之圖。 圖4A-圖4D是由本實施形態之分割裝置進行的分割動作的說明圖。 圖5A-圖5B是顯示變形例之晶片間隔的調整處理之圖。FIG. 1 is a perspective view of a dividing device according to this embodiment. FIG. 2 is an explanatory diagram of a wafer dividing operation and a picking operation of a comparative example. FIG. 3A to FIG. 3D are diagrams showing a wafer gap adjustment process in this embodiment. 4A to 4D are explanatory diagrams of a division operation performed by the division device according to this embodiment. 5A to 5B are diagrams illustrating a wafer gap adjustment process according to a modification.

Claims (1)

一種分割裝置,是將形成有分割起點之晶圓貼附於將環狀框架之開口堵塞而貼附之膠帶上,而使該環狀框架、該膠帶與晶圓一體化而成之工件組的該膠帶進行擴張,而以該分割起點作為起點來分割晶圓,該分割裝置具備: 框架保持設備,保持該環狀框架; 工作台,具有保持面,該保持面是隔著該框架保持設備所保持之工件組的該膠帶來保持晶圓; 升降設備,使該工作台與該框架保持設備在相對於該保持面正交的方向上相對地接近及遠離; 控制設備,使該工作台與該框架保持設備朝相遠離之方向移動而擴張該膠帶,且以該分割起點為起點來分割晶圓之後,使該工作台與該框架保持設備朝相接近之方向移動而使相鄰之晶片靠近,並形成預先設定之縮窄的間隔;及 收縮設備,藉由該控制設備而形成該間隔,並以該保持面吸引保持已擴張之該膠帶而維持該間隔,且使該工作台與該框架保持設備更加接近,並使晶圓的外周與環狀框架的內周之間的已鬆弛的該膠帶收縮,而將相鄰之晶片的間隔固定。A slicing device is configured to attach a wafer formed with a slicing starting point to a tape formed by closing and opening an opening of a ring frame, and integrating the ring frame, the tape, and the wafer. The tape is expanded, and the wafer is divided using the dividing starting point as a starting point. The dividing device includes: a frame holding device that holds the ring-shaped frame; a table having a holding surface that is held by the holding device across the frame; Holding the wafer of the workpiece set to hold the wafer; lifting equipment to make the worktable and the frame holding equipment relatively close to and away from each other in a direction orthogonal to the holding surface; control equipment to make the worktable and the The frame holding equipment is moved in a direction away from each other to expand the tape, and after the wafer is divided with the starting point of the division as a starting point, the table and the frame holding equipment are moved in a close direction to bring adjacent wafers closer. And forming a narrowing interval set in advance; and a shrinking device, forming the interval by the control device, and maintaining the expanded tape with the holding surface to maintain The spacer, and that the stage holding device closer to the frame, between the inner circumference of the outer periphery of the annular frame and the wafer have been relaxed shrinkage of the adhesive tape, and the spacing of adjacent stationary wafer.
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