KR20200143258A - Dicing tape and dicing die-bonding film - Google Patents

Abstract

Provided are a dicing tape and a dicing die-bonding film, capable of sufficiently maintaining a distance between adjacent semiconductor chips. The present invention provides the dicing tape, in which an adhesive layer is laminated on a substrate, wherein the substrate includes a first resin layer including a first resin having a molecular weight dispersion degree of 5 or less, a second resin layer laminated on one surface of the first resin layer, and a third resin layer laminated on the second resin layer on an opposite side of the first resin layer, and the second resin layer has a lower tensile storage elastic modulus than the first resin layer and the third resin layer at a room temperature.

Description

Dicing tape and dicing die-bonding film {DICING TAPE AND DICING DIE-BONDING FILM}

The present invention relates to a dicing tape and a dicing die bonding film. More specifically, it relates to a dicing tape and a dicing die-bonding film in which the substrate has a laminated structure.

[Cross reference of related applications]

This application claims the priority of Japanese Patent Application No. 2019-110199, and is incorporated in the description of this specification by reference.

Conventionally, in the manufacture of a semiconductor device, in order to obtain a semiconductor chip for die bonding, it is known to use a dicing die-bonding film. The dicing die-bonding film includes a die-bonding tape in which a pressure-sensitive adhesive layer is laminated on a base material, and a die-bonding layer laminated on the pressure-sensitive adhesive layer of the die-bonding tape.

Further, as a method of obtaining a semiconductor chip (die) for die bonding using the dicing die-bonding film, a groove is formed in the semiconductor wafer to be processed into chips (die) by cutting the semiconductor wafer, and further The half-cut process of grinding a semiconductor wafer to reduce the thickness, a back-grinding process of grinding the semiconductor wafer after the half-cut process to reduce the thickness, and one side of the semiconductor wafer after the back-grinding process (e.g., the side opposite to the circuit surface) The surface of the semiconductor chip is attached to the die-bonding layer to fix the semiconductor wafer to the dicing tape, the expand process increases the spacing between the half-cut semiconductor chips, and the caph maintains the gap between the semiconductor chips. The process, the pick-up process of peeling between the die-bonding layer and the pressure-sensitive adhesive layer to take out the semiconductor chip while the die-bonding layer is affixed, and the semiconductor chip with the die-bonding layer are attached to an adherend (for example, a mounting substrate It is known to employ a method having a die bonding process of adhering to).

In addition, in the above caph holding step, the dicing tape is heat-shrunk by contacting the dicing tape with hot air (for example, 100 to 130°C), then cooled and solidified, and the distance between the divided adjacent semiconductor chips (cap) Has been maintained.

In the cap holding process of the method of obtaining a semiconductor chip for die bonding as described above, it is known to satisfy a specific relationship between the physical properties of the dicing tape and the physical properties of the substrate in order to more fully hold the cap (for example, For example, Patent Document 1).

International Publication No. 2016/152919

However, in the caph holding process, further investigation is desired in order to more fully maintain the capp.

Therefore, the present invention makes it a subject to provide a dicing tape and a dicing die-bonding film capable of sufficiently holding a capp.

The dicing tape according to the present invention,

It is a dicing tape in which an adhesive layer is laminated on a substrate,

The substrate includes a first resin layer comprising a first resin having a molecular weight dispersion degree of 5 or less, a second resin layer laminated on one surface of the first resin layer, and the second resin layer on the opposite side of the first resin layer. It has a third resin layer laminated on the second resin layer,

The second resin layer has a lower tensile storage modulus at room temperature than the first resin layer and the third resin layer.

In the dicing tape,

It is preferable that the said 1st resin has a melting point of 115 degreeC or more and 130 degreeC or less.

In the dicing tape,

The first resin preferably has a mass average molecular weight of 100000 or more and 1000000 or less, and a number average molecular weight of 20000 or more and 600000 or less.

In the dicing tape,

It is preferable that the first resin contains a polypropylene resin that is a polymerized product by a metallocene catalyst.

In the dicing tape,

The thickness of the substrate is 60 μm or more and 160 μm or less,

The ratio of the thickness of the first resin layer to the thickness of the second resin layer is in the range of 1/4 to 1/20,

It is preferable that the ratio of the thickness of the third resin layer to the thickness of the second resin layer is in the range of 1/4 to 1/20.

In the dicing tape,

It is preferable that the said 2nd resin layer contains an α-olefin-based thermoplastic elastomer.

In the dicing tape,

It is preferable that the α-olefin-based thermoplastic elastomer contains at least one of an α-olefin homopolymer or an α-olefin copolymer.

The dicing die bonding film according to the present invention,

The dicing tape,

And a die-bonding layer laminated on the pressure-sensitive adhesive layer of the dicing tape.

1 is a cross-sectional view showing a configuration of a dicing tape according to an embodiment of the present invention.
2 is a cross-sectional view showing a configuration of a dicing die-bonding film according to an embodiment of the present invention.
3A is a cross-sectional view schematically showing a state of half-cut processing in a method for manufacturing a semiconductor integrated circuit.
3B is a cross-sectional view schematically showing a state of half-cutting in a method for manufacturing a semiconductor integrated circuit.
Fig. 3C is a cross-sectional view schematically showing a state of back grinding in a method for manufacturing a semiconductor integrated circuit.
3D is a cross-sectional view schematically showing a state of back grinding in a method of manufacturing a semiconductor integrated circuit.
4A is a cross-sectional view schematically showing a state of a mounting step in a method for manufacturing a semiconductor integrated circuit.
4B is a cross-sectional view schematically showing a state of a mounting process in a method for manufacturing a semiconductor integrated circuit.
5A is a cross-sectional view schematically illustrating a state of an expand process at a low temperature in a method for manufacturing a semiconductor integrated circuit.
5B is a cross-sectional view schematically illustrating a state of an expand process at a low temperature in a method for manufacturing a semiconductor integrated circuit.
5C is a cross-sectional view schematically showing a state of an expanding process at a low temperature in a method for manufacturing a semiconductor integrated circuit.
6A is a cross-sectional view schematically showing a state of an expand process at room temperature in a method for manufacturing a semiconductor integrated circuit.
6B is a cross-sectional view schematically showing a state of an expand process at room temperature in a method for manufacturing a semiconductor integrated circuit.
7 is a cross-sectional view schematically illustrating a state of a cap holding step in a method for manufacturing a semiconductor integrated circuit.
8 is a cross-sectional view schematically showing a mode of a pickup step in a method for manufacturing a semiconductor integrated circuit.

Hereinafter, an embodiment of the present invention will be described.

[Dicing Tape]

As shown in FIG. 1, the dicing tape 10 according to the present embodiment is a dicing tape 10 in which an adhesive layer 2 is laminated on a substrate 1.

The substrate 1 includes a first resin layer 1a comprising a first resin having a molecular weight dispersion degree of 5 or less, a second resin layer 1b laminated on one surface of the first resin layer 1a, and A third resin layer 1c laminated on the second resin layer 1b is provided on the opposite side of the 1 resin layer 1a, and the second resin layer 1b comprises a first resin layer 1a and a first resin layer 1a. 3 The tensile storage modulus at room temperature (23°C) is lower than that of the resin layer 1c.

Further, the second resin layer 1b contains a second resin, and the third resin layer 1c contains a first resin.

Here, the molecular weight dispersion degree of the first resin means a ratio of the mass average molecular weight of the first resin to the number average molecular weight of the first resin.

The reason why the cap is more sufficiently maintained by the substrate 1 having the first resin layer 1a containing the first resin having a molecular weight dispersion degree of 5 or less is considered as follows.

Since the first resin exhibits a relatively small molecular weight dispersion degree of 5 or less, that is, the first resin is a resin having a relatively uniform molecular weight, in the first resin layer containing such a first resin, the temperature at which the layer melts Is considered to be relatively uniform.

And, since the temperature at which the layer melts is relatively uniform, in the calf holding process, hot air (for example, 100 to 130°C) is applied to the dicing tape 10 to heat shrink the dicing tape 10 When cooling and solidifying, it is thought that the layer portion melted by hot air can be solidified at a relatively uniform rate. That is, it is considered that the molten layer portion can be solidified relatively quickly as long as there is no fluctuation in the rate at which the molten layer portion solidifies.

As a result, after heat shrinking the dicing tape 10, it is possible to more sufficiently suppress the shrinkage of the base material 1, and it is considered that the caph can be more sufficiently held.

The number average molecular weight and the mass average molecular weight of the first resin can be measured by GPC under the following conditions.

Measurement device: manufactured by Waster, type "Alliance GPC 2000 type"

Column: Two TSkgel GMH6-HT (manufactured by Tosoh Corporation) are connected in series, and two TSKgel GMH-HTL are connected in series on the downstream side.

Column size: For both TSKgel GMH6-HT and TSKgel GMH-HTL, inner diameter 7.5 mm × length 300 mm

·Column temperature: 140℃

Flow rate: 1.0 mL/min

Eluent: o-dichlorobenzene

Sample preparation concentration: 0.10% by mass (dissolved in o-dichlorobenzene)

・Sample injection volume: 40μL

Detector: RI (differential refractometer)

·Standard sample: Polystyrene

Examples of the first resin layer 1a and the third resin layer 1c include those having a tensile storage modulus of 10 MPa or more and 100 MPa or less at room temperature, and as the second resin layer 1b, the tensile storage modulus at room temperature is 200 MPa. What is more than 500 MPa is mentioned.

The tensile storage modulus at room temperature can be measured as follows.

Specifically, a dicing tape having a length of 40 mm (measurement length) and a width of 10 mm is used as a test piece, and a solid viscoelasticity measuring device (e.g., Model RSAIII, manufactured by Rheometric Scientific Co., Ltd.) is used, and a frequency of 1 Hz, It can be calculated|required by measuring the tensile storage modulus of the said test piece in the temperature range of -50-100 degreeC in the conditions of the deformation|transformation amount 0.1%, a temperature increase rate 10 degreeC/min, and the chuck distance 22.5mm. At that time, the value at 23°C is read, and it is set as the tensile storage modulus at 23°C.

In addition, the measurement is performed by pulling the test piece in the MD direction (resin flow direction).

It is preferable to use a non-elastomer as the first resin. Examples of the non-elastomer include polypropylene resin (hereinafter referred to as metallocene PP) which is a polymerized product by a metallocene catalyst. Examples of the metallocene PP include a propylene/α-olefin copolymer which is a polymerized product by a metallocene catalyst. Since the first resin layer 1a and the third resin layer 1c contain metallocene PP, a dicing tape can be efficiently manufactured, and the semiconductor wafer affixed to the dicing tape can be efficiently divided. I can.

Moreover, as a commercially available metallocene PP, Wintech WXK1233 and Wintech WMX03 (both made by Nippon Polypro) are mentioned.

Here, the metallocene catalyst refers to a transition metal compound (so-called metallocene compound) of group 4 of the periodic table including a ligand having a cyclopentadienyl skeleton, and a metallocene compound to react with the metallocene compound. It is a catalyst composed of a cocatalyst capable of being activated in a stable ionic state, and contains an organoaluminum compound if necessary. The metallocene compound is a crosslinked metallocene compound that enables stereoregular polymerization of propylene.

Among the propylene/α-olefin copolymers that are polymerized products by the metallocene catalyst, propylene/α-olefin random copolymers that are polymerized products by metallocene catalysts are preferred, and the polymerized products by the metallocene catalyst are Among the propylene/α-olefin random copolymers, propylene/C2 α-olefin random copolymers, which are polymerized products by a metallocene catalyst, and propylene/C4 α-olefin random copolymers, polymerized products by metallocene catalysts. It is preferred to be selected from propylene/a-olefin random copolymers having 5 carbon atoms, which are polymerized products by coalescence and metallocene catalysts, and among them, propylene/ethylene random copolymers, which are polymerized products by metallocene catalysts, are optimal. .

The propylene/α-olefin random copolymer, which is a polymerized product of the metallocene catalyst, has a melting point of 80° C. or more and 140 from the viewpoint of coextrusion film formation property with the elastomer layer and the cleavability of a semiconductor wafer affixed to a dicing tape. It is preferable that it is 100 degreeC or more and 130 degreeC or less in particular.

The melting point of the propylene/α-olefin random copolymer, which is a polymerized product by the metallocene catalyst, can be measured by differential scanning calorimetry (DSC) analysis. For example, it can be measured by using a differential scanning calorimeter (DSC Q2000 manufactured by TA Instruments) to increase the temperature to 200°C at a temperature increase rate of 5°C/min under a nitrogen gas stream, and obtain the peak temperature of the endothermic peak. .

The first resin preferably has a mass average molecular weight of 100000 or more and 1000000 or less, and a number average molecular weight of 20000 or more and 600000 or less.

It is preferable to use an elastomer as the second resin. Examples of the elastomer include an α-olefin-based thermoplastic elastomer. As an α-olefin thermoplastic elastomer, for example, a homopolymer of α-olefin, a copolymer of two or more α-olefins, block polypropylene, random polypropylene, one or two or more α-olefins and other vinyl monomers. Copolymers, etc. are mentioned.

Examples of the α-olefin-based thermoplastic elastomer include a combination of a propylene/ethylene copolymer and a propylene homopolymer, or a propylene/ethylene/alpha-olefin terpolymer having 4 or more carbon atoms.

As a commercial item of an α-olefin-based thermoplastic elastomer, for example, Vistamax 3980 (manufactured by Exxon Mobil Chemical), which is a propylene-based elastomer resin, is mentioned.

As a homopolymer of an α-olefin, it is preferable that it is a homopolymer of an α-olefin having 2 or more and 12 or less carbon atoms. Examples of such a homopolymer include ethylene, propylene, 1-butene, and 4-methyl-1-pentene.

As a copolymer of two or more types of α-olefins, ethylene/propylene copolymer, ethylene/1-butene copolymer, ethylene/propylene/1-butene copolymer, ethylene/C5 or more and 12 or less α-olefin copolymer, propylene /Ethylene copolymer, propylene/1-butene copolymer, and propylene/alpha-olefin copolymer of 5 or more and 12 or less carbon atoms, etc. are mentioned.

Examples of the copolymer of one or two or more α-olefins and other vinyl monomers include ethylene-vinyl acetate copolymer (EVA) and the like.

When the substrate 1 has a three-layer structure as described above, the first resin and the second resin are co-extruded, and the first resin layer 1a and the third resin layer are formed on both sides of the second resin layer 1b. It is preferable that 1c) is obtained by coextrusion molding to a laminated structure. As co-extrusion molding, any suitable co-extrusion molding generally performed in the production of a film or sheet can be adopted. Among co-extrusion molding, it is preferable to employ an inflation method or a co-extrusion T-die method from the viewpoint that the base material 1 can be obtained efficiently and at low cost.

When the second resin layer 1b contains an α-olefin-based thermoplastic elastomer, and the first resin layer 1a and the third resin layer 1c contain a polyolefin such as metallocene PP, the second The resin layer 1b preferably contains 50% by mass or more and 100% by mass or less, and 70% by mass or more and 100% by mass or less of the α-olefin-based thermoplastic elastomer with respect to the total mass of the elastomer contained in the second resin layer 1b. It is more preferable to contain it by mass% or less, It is more preferable to contain 80 mass% or more and 100 mass% or less It is especially preferable that it contains 90 mass% or more and 100 mass% or less, 95 mass% or more and 100 mass% It is optimal to include the following. Since the α-olefin-based thermoplastic elastomer is included in the above range, the affinity of the first resin layer 1a and the second resin layer 1b and the affinity of the third resin layer 1c and the second resin layer 1b Since the affinity becomes high, the base material 1 can be extruded relatively easily, and the semiconductor wafer affixed to the dicing tape can be cut efficiently.

When the base material 1 constituting the laminated structure is obtained by coextrusion molding, the first resin layer 1a and the second resin layer 1b, and the third resin layer 3c and the second resin layer 1b are It is preferable that the melting point difference between the first resin and the second resin is smaller because the contact is made in a heated and molten state. Since the melting point difference is small, it is possible to suppress generation of by-products due to thermal deterioration of the low melting point resin because excessive heat is suppressed. In addition, as the viscosity of the low-melting-point resin is excessively lowered, lamination failure between the first resin layer 1a and the second resin layer 1b and between the third resin layer 1c and the second resin layer 1b What happens can also be suppressed. The difference in melting point between the first resin and the second resin is preferably 0°C or more and 70°C or less, and more preferably 0°C or more and 55°C or less.

The melting points of the first resin and the second resin can be measured by the method described above.

The thickness of the substrate 1 is preferably 55 µm or more and 195 µm or less, more preferably 55 µm or more and 190 µm or less, still more preferably 55 µm or more and 170 µm or less, and optimally 60 µm or more and 160 µm or less. By setting the thickness of the substrate 1 in the above-described range, a dicing tape can be efficiently manufactured, and a semiconductor wafer affixed to the dicing tape can be efficiently cut.

The thickness of the substrate 1 can be obtained by measuring the thickness of five randomly selected points using, for example, a dial gauge (model R-205 manufactured by PEACOCK), and arithmetic average of these thicknesses.

In the substrate 1, the ratio of the thickness of the first resin layer 1a to the thickness of the second resin layer 1b and the thickness of the third resin layer 1c to the thickness of the second resin layer 1b The ratio of is preferably 1/25 or more and 1/3 or less, more preferably 1/25 or more and 1/3.5 or less, even more preferably 1/25 or more and 1/4 or less, and 1/22 or more and 1/4 or less. It is particularly preferable, and it is optimal that it is 1/20 or more and 1/4 or less. By setting the ratio of the thickness of the first resin layer 1a to the thickness of the second resin layer 1b and the thickness of the third resin layer 1c to the thickness of the second resin layer 1b in the above range , The semiconductor wafer affixed on the dicing tape can be cut more efficiently.

The thickness of the first resin layer 1a, the second resin layer 1b, and the third resin layer 1c can be obtained by observing a cross section cut out from the first resin layer 1 by a freezing microtome method under a microscope. . For example, using an electron microscope to observe the central portion of the section cut out by the freezing microtome method at a magnification of 100 times, the first resin layer (1a), the second resin layer (1b) and the third resin layer (1c) ), the thickness of three points arbitrarily selected along the MD direction (resin flow direction) is measured, and the measured values of the three points measured for each layer are calculated by arithmetic average.

The first resin layer 1a and the third resin layer 1c may have a single layer (one layer) structure or a laminated structure. The first resin layer 1a is preferably a one to five layer structure, more preferably a one to three layer structure, even more preferably a one to two layer structure, and a one layer structure is optimal. . When the first resin layer 1a and the third resin layer 1c have a laminated structure, all layers may contain the same first resin, and at least two layers may contain different first resins.

The second resin layer 1b may have a single-layer (one-layer) structure or a laminated structure. The second resin layer (1b) is preferably a one to five layer structure, more preferably a one to three layer structure, more preferably a one to two layer structure, and a one layer structure is optimal to be. When the second resin layer 1b has a laminated structure, all layers may contain the same second resin, and at least two layers may contain different second resins.

Here, if the elastomer layer is disposed on the outermost layer of the substrate 1, when the substrate 1 is formed as a roll, the elastomer layers disposed on the outermost layer are easily blocked (it becomes easy to stick). Therefore, it becomes difficult to rewind the base material 1 into a roll body. In contrast, in the substrate 1 according to the present embodiment, the first resin layer 1a and the third resin layer 1c are non-elastomeric layers, and the first resin layer 1b is an elastomer layer, that is, the most Since a non-elastomeric layer is disposed on the outer layer, the base material 1 of this aspect is excellent in blocking resistance. Thereby, it is possible to suppress delay in manufacturing a semiconductor device using the dicing tape 10 due to blocking.

It is preferable that the 1st resin layer 1a is comprised with a resin which has a melting point of 115 degreeC or more and 130 degreeC or less, and molecular weight dispersion degree (mass average molecular weight/number average molecular weight) is 5 or less. Metallocene PP is mentioned as such a resin.

Since the first resin layer 1a is made of the above resin, the boundary between the outer periphery of the semiconductor wafer and the outer periphery of the semiconductor wafer is maintained in order to maintain the gap (cap) between the plurality of semiconductor chips obtained by cutting the semiconductor wafer under low temperature conditions. After making the dicing tape heat-shrink by contacting the dicing tape of the part with hot air (for example, 100 to 130°C), the time required for the molten non-elastomeric layer (the outermost layer) to solidify by contacting the hot air is reduced. You can do it relatively short.

Thereby, the calf can be more suitably maintained.

The adhesive layer 2 contains an adhesive. The pressure-sensitive adhesive layer 2 is held by adhering a semiconductor wafer to be divided into semiconductor chips. In this embodiment, the pressure-sensitive adhesive layer 2 is laminated on the first resin layer 1a of the base material 1.

Examples of the pressure-sensitive adhesive include those capable of reducing adhesive force by an external action in the process of using the dicing tape 10 (hereinafter referred to as a reduced-adhesion pressure-sensitive adhesive).

In the case of using a reduced-adhesive pressure-sensitive adhesive as the pressure-sensitive adhesive, in the process of using the dicing tape 10, the pressure-sensitive adhesive layer 2 exhibits a relatively high adhesive strength (hereinafter referred to as a high-adhesion state) and a relatively low adhesive strength. The indicated state (hereinafter referred to as a low-adhesion state) can be used separately. For example, when a semiconductor wafer affixed to the dicing tape 10 is provided for slicing, a plurality of semiconductor chips separated by the slicing of the semiconductor wafer is suppressed from floating or peeling from the adhesive layer 2 To do this, use a high-adhesion state. In contrast, in order to pick up a plurality of individualized semiconductor chips after the semiconductor wafer is cut, a low-adhesion state is used in order to facilitate pickup of the plurality of semiconductor chips from the pressure-sensitive adhesive layer 2.

As the adhesion-reducing pressure-sensitive adhesive, for example, a pressure-sensitive adhesive (hereinafter referred to as a radiation-curable pressure-sensitive adhesive) that can be cured by irradiation with radiation in the process of using the dicing tape 10 is mentioned.

Examples of the radiation-curable pressure-sensitive adhesive include a type of pressure-sensitive adhesive that is cured by irradiation with electron beams, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays. Among these, it is preferable to use a pressure-sensitive adhesive (ultraviolet curing pressure-sensitive adhesive) that is cured by irradiation with ultraviolet rays.

Examples of the radiation-curable pressure-sensitive adhesive include a base polymer such as an acrylic polymer, and a radiation-polymerizable monomer component or radiation-polymerizable oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond. Can be mentioned.

Examples of the acrylic polymer include those containing a monomer unit derived from a (meth)acrylic acid ester. As (meth)acrylic acid ester, (meth)acrylic acid alkyl ester, (meth)acrylic acid cycloalkyl ester, (meth)acrylic acid aryl ester, etc. are mentioned, for example.

The pressure-sensitive adhesive layer 2 may contain an external crosslinking agent. As the external crosslinking agent, any one can be used as long as it reacts with the acrylic polymer as the base polymer to form a crosslinked structure. Examples of such external crosslinking agents include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based crosslinking agents.

As the radiation polymerizable monomer component, for example, urethane (meth)acrylate, trimethylolpropane tri (meth)acrylate, pentaerythritol tri (meth)acrylate, pentaerythritol tetra (meth)acrylate, dipenta Erythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. Examples of the radiation polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based. The content ratio of the radiation-polymerizable monomer component or the radiation-polymerizable oligomer component in the radiation-curable pressure-sensitive adhesive is selected within a range in which the adhesiveness of the pressure-sensitive adhesive layer 2 is appropriately reduced.

It is preferable that the said radiation curing adhesive contains a photoinitiator. As a photoinitiator, for example, α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds Compounds, campoquinone, halogenated ketones, acylphosphine oxide, and acylphosphonate.

The pressure-sensitive adhesive layer 2 may contain a crosslinking accelerator, a tackifier, an anti-aging agent, a colorant such as a pigment or a dye, etc. in addition to each of the above components.

The thickness of the pressure-sensitive adhesive layer 2 is preferably 1 µm or more and 50 µm or less, more preferably 2 µm or more and 30 µm or less, and still more preferably 5 µm or more and 25 µm or less.

[Dicing Die Bond Film]

Next, the dicing die bonding film 20 will be described with reference to FIG. 2. In addition, in the description of the dicing die-bonding film 20, in the part overlapping with the dicing tape 10, the description is not repeated.

As shown in FIG. 2, the dicing die-bonding film 20 according to the present embodiment includes a dicing tape 10 in which an adhesive layer 2 is laminated on a substrate 1, and a dicing tape 10. And a die bond layer 3 laminated on the pressure-sensitive adhesive layer 2 of.

The substrate 1 includes a first resin layer 1a comprising a first resin having a molecular weight dispersion degree of 5 or less, a second resin layer 1b laminated on one surface of the first resin layer 1a, and 1 The third resin layer 1c laminated on the second resin layer 1b is provided on the opposite side of the resin layer 1a, and the second resin layer 1b includes the first resin layer 1a and the third resin layer 1a. The tensile storage modulus at room temperature (23°C) is lower than that of the resin layer 1c.

Further, the second resin layer 1b contains a second resin, and the third resin layer 1c contains a first resin.

In the dicing die bonding film 20, a semiconductor wafer is affixed on the die bonding layer 3.

In the cutting of the semiconductor wafer using the dicing die-bonding film 20, the die-bonding layer 3 is also cut together with the semiconductor wafer. The die-bonding layer 3 is divided into a size corresponding to the size of a plurality of individual semiconductor chips. Thereby, a semiconductor chip provided with the die-bonding layer 3 can be obtained.

In the dicing die-bonding film 20 according to the present embodiment, like the dicing tape 10, the melting point of the first resin is preferably 115° C. or more and 130° C. or less, and the first resin has a mass average molecular weight. It is 100000 or more and 1000000 or less, and it is preferable that the number average molecular weight is 20000 or more and 600,000 or less, and it is preferable that the 1st resin contains a polypropylene resin which is a polymerization product by a metallocene catalyst.

In addition, the dicing die-bonding film 20 has a thickness of the substrate 1 of 60 μm or more and 160 μm or less, similar to the dicing tape 10, and the first resin layer relative to the thickness of the second resin layer 1b. The ratio of the thickness of (1a) is in the range of 1/4 to 1/20, and the ratio of the thickness of the third resin layer 1c to the thickness of the second resin layer 1b is 1/4 to 1 It is preferably in the range of /20.

In addition, as for the dicing die-bonding film 20, like the dicing tape 10, it is preferable that the second resin layer 1b contains an α-olefin-based thermoplastic elastomer, and the α-olefin-based thermoplastic elastomer is , It is preferable to contain at least one of a homopolymer of an α-olefin or a copolymer of an α-olefin.

It is preferable that the die-bonding layer 3 has thermosetting. By including at least one of a thermosetting resin and a thermoplastic resin having a thermosetting functional group in the die-bonding layer 3, thermosetting can be imparted to the die-bonding layer 3.

When the die-bonding layer 3 contains a thermosetting resin, examples of such thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. I can. Among these, it is preferable to use an epoxy resin.

As an epoxy resin, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, Epoxy resins of orthocresol novolac type, trishydroxyphenylmethane type, tetraphenylolethane type, hydantoin type, trisglycidyl isocyanurate type, and glycidylamine type are mentioned.

As a phenol resin as a curing agent for an epoxy resin, polyoxystyrene, such as a novolac type phenol resin, a resol type phenol resin, and polyparaoxystyrene, is mentioned, for example.

When the die-bonding layer 3 contains a thermoplastic resin having a thermosetting functional group, examples of such thermoplastic resin include an acrylic resin containing a thermosetting functional group. Examples of the acrylic resin in the thermosetting functional group-containing acrylic resin include those containing a monomer unit derived from a (meth)acrylic acid ester.

In the thermosetting resin having a thermosetting functional group, a curing agent is selected according to the kind of the thermosetting functional group.

The die bonding layer 3 may contain a thermosetting catalyst from the viewpoint of sufficiently advancing the curing reaction of the resin component or increasing the curing reaction rate. Examples of the thermosetting catalyst include imidazole compounds, triphenylphosphine compounds, amine compounds, and trihalogenborane compounds.

The die bonding layer 3 may contain a thermoplastic resin in addition to the thermosetting resin. The thermoplastic resin functions as a binder. As the thermoplastic resin, for example, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic Polyimide resins, polyamide resins such as polyamide 6 and polyamide 6,6, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. Only one type of thermoplastic resin may be used, or two or more types may be used in combination. As the thermoplastic resin, since there are few ionic impurities and high heat resistance, an acrylic resin is preferable from the viewpoint that it becomes easy to secure connection reliability by a die-bonding layer.

It is preferable that the said acrylic resin is a polymer which contains the monomer unit derived from a (meth)acrylic acid ester as the largest number of monomer units by mass ratio. As (meth)acrylic acid ester, (meth)acrylic acid alkyl ester, (meth)acrylic acid cycloalkyl ester, (meth)acrylic acid aryl ester, etc. are mentioned, for example. The acrylic resin may contain a monomer unit derived from another component copolymerizable with a (meth)acrylic acid ester. Examples of the other components include functional group-containing monomers such as carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide and acrylonitrile, and various polyfunctionals. And monomers. From the viewpoint of realizing a high cohesive force in the die-bonding layer, the acrylic resin includes a (meth)acrylic acid ester (especially, a (meth)acrylate alkyl ester having 4 or less carbon atoms in the alkyl group), a carboxyl group-containing monomer, and a nitrogen atom-containing monomer. And, a copolymer of a polyfunctional monomer (especially a polyglycidyl polyfunctional monomer) is preferable, and copolymerization of ethyl acrylate, butyl acrylate, acrylic acid, acrylonitrile, and polyglycidyl (meth)acrylate It is more preferable to have a chain.

The die bonding layer 3 may contain one type or two or more types of other components as necessary. As another component, a flame retardant, a silane coupling agent, and an ion trapping agent are mentioned, for example.

The thickness of the die-bonding layer 3 is preferably 40 µm or more, more preferably 60 µm or more, and even more preferably 80 µm or more. Further, the thickness of the die bonding layer 3 is preferably 200 µm or less, more preferably 160 µm or less, and further preferably 120 µm or less.

The dicing die-bonding film 20 according to the present embodiment is used, for example, as an auxiliary tool for manufacturing a semiconductor integrated circuit. Hereinafter, a specific example of use of the dicing die-bonding film 20 will be described.

Hereinafter, an example using the dicing die-bonding film 20 in which the substrate 1 is one layer will be described.

The method of manufacturing a semiconductor integrated circuit includes a half-cut process in which a groove is formed in a semiconductor wafer to process a semiconductor wafer into a chip (die) by a cutting process, and the semiconductor wafer is further ground to reduce the thickness, and a half-cut process. A back-grinding process in which the semiconductor wafer after the process is ground to reduce its thickness, and one surface of the semiconductor wafer after the back-grinding process (e.g., the surface opposite to the circuit surface) is affixed to the die bonding layer 3 to dicing The mounting process of fixing the semiconductor wafer to the tape 10, the expanding process of increasing the spacing between the half-cut semiconductor chips, the capping holding process of maintaining the spacing between the semiconductor chips, the die bonding layer 3 and A pickup process in which the semiconductor chip (die) is removed by peeling between the pressure-sensitive adhesive layers (2) and the die-bonding layer (3) is affixed, and the semiconductor chip (die) of the die-bonding layer (3) is avoided. It has a die bonding process of adhering to the complex. When performing these processes, the dicing tape (dicing die-bonding film) of this embodiment is used as a manufacturing auxiliary tool.

In the half-cutting process, as shown in Figs. 3A and 3B, a half-cutting process for cutting the semiconductor integrated circuit into small pieces (die) is performed. Specifically, the wafer processing tape T is affixed to the surface of the semiconductor wafer W on the opposite side to the circuit surface (see Fig. 3A). Further, a dicing ring R is provided on the wafer processing tape T (see Fig. 3A). In the state where the wafer processing tape T is affixed, a dividing groove is formed (see Fig. 3B). In the back grinding process, as shown in Figs. 3C and 3D, the semiconductor wafer is ground to reduce the thickness. Specifically, while the back grinding tape G is affixed to the grooved surface, the wafer processing tape T first affixed is peeled off (see Fig. 3C). While the back grinding tape G is affixed, grinding is performed until the semiconductor wafer W has a predetermined thickness (see Fig. 3D).

In the mounting process, as shown in Figs. 4A to 4B, after installing the dicing ring R on the pressure-sensitive adhesive layer 2 of the dicing tape 10, the surface of the exposed die-bonding layer 3 is The cut-processed semiconductor wafer W is affixed (see Fig. 4A). After that, the back grinding tape G is peeled off from the semiconductor wafer W (see Fig. 4B).

In the expand process, as shown in Figs. 5A to 5C, the dicing ring R is fixed to the holder H of the expander. The dicing die-bonding film 20 is stretched so as to expand in the plane direction by pushing the dicing die-bonding film 20 from the lower side using the push-up member U provided in the expander (see Fig. 5B). . Thereby, under a specific temperature condition, the semiconductor wafer W which has been half-cut is cut. The temperature conditions are, for example, -20 to 5°C, preferably -15 to 0°C, and more preferably -10 to -5°C. By lowering the push-up member U, the expanded state is released (see Fig. 5C).

In addition, in the expand process, as shown in Figs. 6A to 6B, under a higher temperature condition (for example, room temperature (23°C)), the dicing tape 10 is stretched to increase the area. . Thereby, the divided adjacent semiconductor chip W is separated in the plane direction of the film surface, and the gap is widened.

In the caph holding process, as shown in FIG. 7, hot air (for example, 100 to 130°C) is applied to the dicing tape 10 to heat shrink the dicing tape 10 and then cool and solidify it, The distance (calf) between adjacent semiconductor chips W is maintained.

Here, in the dicing die-bonding film 20 according to the present embodiment, the substrate 1 includes a first resin layer 1a containing a first resin having a molecular weight dispersion degree of 5 or less, and a first resin layer 1a. ), and a third resin layer 1c stacked on the second resin layer 1b on the opposite side of the first resin layer 1a, and 2 Since the resin layer 1b has a lower tensile storage modulus at room temperature (23 degrees) than the first resin layer 1a and the third resin layer 1c, it is possible to more sufficiently maintain the caps in the capping holding step. have.

In the pick-up step, as shown in FIG. 8, the semiconductor chip W in a state in which the die bonding layer 3 is affixed is peeled from the adhesive layer 2 of the dicing tape 10. Specifically, the pin member P is raised, and the semiconductor chip W to be picked up is pushed up through the dicing tape 10. The pushed-up semiconductor chip is held by the suction jig J.

In the die bonding process, the semiconductor chip W in the state in which the die bonding layer 3 is affixed is adhered to the adherend.

In addition, in the manufacture of the semiconductor integrated circuit described above, an example in which the dicing die-bonding film 20 is used as an auxiliary tool has been described. However, even when the dicing tape 10 is used as an auxiliary tool, it is similar to the above. Can manufacture semiconductor integrated circuits.

Matters disclosed by this specification include the following.

(One)

It is a dicing tape in which an adhesive layer is laminated on a substrate,

The substrate includes a first resin layer comprising a first resin having a molecular weight dispersion degree of 5 or less, a second resin layer laminated on one surface of the first resin layer, and the second resin layer on the opposite side of the first resin layer. It has a third resin layer laminated on the second resin layer,

The second resin layer has a lower tensile storage modulus at room temperature than the first resin layer and the third resin layer.

Dicing tape.

According to this configuration, since the base material includes a first resin layer containing a first resin having a molecular weight dispersion degree of 5 or less, the base material can be cooled and solidified more quickly in the caph holding step.

In addition, a second resin layer laminated on one side of the first resin layer, and a second resin layer in which a third resin layer is laminated on a side opposite to the first resin layer, that is, the first resin layer and the third resin layer. Since the tensile storage modulus at room temperature of the second resin layer sandwiched by the resin layer is lower than the tensile storage modulus at room temperature of the first resin layer and the third resin layer, the second resin layer is subjected to tensile stress. It can function as a stress relaxation layer to relax. That is, since the tensile stress generated in the substrate can be made relatively small, the substrate can be made to have an appropriate hardness and relatively easy to stretch.

Thereby, in the caph holding process, the caph can be more sufficiently maintained.

Further, since the tensile storage modulus of the second resin layer at room temperature is lower than the tensile storage modulus at room temperature of the first resin layer and the third resin layer, the cleavage property from a semiconductor wafer to a plurality of semiconductor chips In addition to being able to be improved, it is possible to suppress breakage of the substrate from being broken in the expansion process.

In addition, when the first resin included in the first resin layer and the second resin included in the second resin layer have high affinity, the first resin layer and the second resin layer are not separated. It can be extruded relatively well.

(2)

The first resin layer and the third resin layer have a tensile storage modulus at room temperature of 10 MPa or more and 100 MPa or less, and the second resin layer has a tensile storage modulus at room temperature of 200 MPa or more and 500 MPa or less,

The dicing tape according to (1) above.

According to this configuration, it is possible to make the substrate more easily stretchable while having an appropriate hardness.

Thereby, in the caph holding process, the caph can be further maintained.

In addition, it is possible to further improve the cleavability of the semiconductor wafer into a plurality of semiconductor chips, and further suppress the cracking and damage of the substrate in the expand process.

(3)

The first resin has a melting point of 115°C or more and 130°C or less,

The dicing tape according to (1) or (2) above.

According to this configuration, since the first resin has a melting point of 115° C. or more and 130° C. or less, hot air (for example, 100 to 130° C.) to contact the dicing tape and the first The temperature difference of the resin constituting the resin layer can be made relatively small. Therefore, in the caph holding step, the substrate can be cooled and solidified more quickly.

Thereby, in the caph holding process, the caph can be more sufficiently maintained.

(4)

The difference in melting point between the first resin and the second resin is 0°C or more and 70°C or less,

The dicing tape according to any one of the above (1) to (3)

(5)

The difference in melting point between the first resin and the second resin is 0°C or more and 55°C or less,

The dicing tape according to any one of (1) to (4) above.

According to this configuration, since the difference in the melting point of the first resin and the second resin can be made relatively small, when the base material is obtained by coextrusion molding, excessive heat can be suppressed from being applied to the low melting point resin, thereby , It is possible to suppress generation of by-products due to thermal deterioration of the low melting point resin.

In addition, it is possible to suppress the occurrence of lamination failure between the first resin layer and the second resin layer by excessively lowering the viscosity of the low-melting-point resin.

Further, when the third resin layer contains the first resin, it is possible to suppress the occurrence of lamination failure between the third resin layer and the second resin layer.

(6)

The first resin has a mass average molecular weight of 100000 or more and 1000000 or less, and a number average molecular weight of 20000 or more and 600000 or less,

The dicing tape according to any one of (1) to (5) above.

(7) The first resin contains a polypropylene resin that is a polymerized product by a metallocene catalyst,

The dicing tape according to any one of (1) to (6) above.

(8) The first resin is a polypropylene resin that is a polymerized product of a metallocene catalyst, and contains a propylene/α-olefin copolymer that is a polymerized product of a metallocene catalyst,

The dicing tape according to (7) above.

(9) The first resin is a propylene/α-olefin copolymer, which is a polymerized product by a metallocene catalyst, and contains a propylene/α-olefin random copolymer, which is a polymerized product by a metallocene catalyst,

The dicing tape according to (8) above.

(10) The first resin is a propylene/α-olefin random copolymer that is a polymerized product by a metallocene catalyst, and is a propylene/α-olefin random copolymer of 2 carbon atoms, which is a polymerized product by a metallocene catalyst, and metal Including those selected from propylene/a-olefin random copolymers having 4 carbon atoms and propylene/a-olefin random copolymers having 5 carbon atoms, which are polymerized products by a losene catalyst,

The dicing tape according to (9) above.

(11)

The first resin is a propylene/α-olefin random copolymer that is a polymerized product of a metallocene catalyst, and includes a propylene/ethylene random copolymer that is a polymerized product of a metallocene catalyst,

The dicing tape according to (10) above.

According to such a structure, in the caph holding process, the caph can be more sufficiently maintained.

(12)

The thickness of the substrate is 60 μm or more and 160 μm or less,

The ratio of the thickness of the first resin layer to the thickness of the second resin layer is in the range of 1/4 to 1/20,

The ratio of the thickness of the third resin layer to the thickness of the second resin layer is in the range of 1/4 to 1/20,

The dicing tape according to any one of (1) to (11) above.

(13)

The second resin layer contains an α-olefin-based thermoplastic elastomer,

The dicing tape according to any one of (1) to (12) above.

(14)

The α-olefin-based thermoplastic elastomer contains at least one of an α-olefin homopolymer or an α-olefin copolymer,

The dicing tape according to (13) above.

(15)

The homopolymer of the α-olefin is a homopolymer of α-olefin having 2 or more and 12 or less carbon atoms,

The dicing tape according to (14) above.

(16)

The homopolymer of the α-olefin is selected from ethylene, propylene, 1-butene and 4-methyl-1-pentene,

The dicing tape according to (15) above.

(17)

The α-olefin copolymer is an ethylene/propylene copolymer, an ethylene/1-butene copolymer, an ethylene/propylene/1-butene copolymer, an ethylene/a-olefin copolymer having 5 or more and 12 or less carbon atoms, and propylene/ethylene. Selected from a copolymer, a propylene/1-butene copolymer, and an α-olefin copolymer having 5 or more and 12 or less carbon atoms,

The dicing tape according to (14) above.

According to such a structure, in the caph holding process, the caph can be more sufficiently maintained.

Further, during expansion in the cutting step, the cutting property from the semiconductor wafer to a plurality of semiconductor chips can be further improved.

(18)

The third resin layer contains the first resin,

The dicing tape according to any one of (1) to (17) above.

According to this configuration, the dicing tape can be efficiently manufactured, and the semiconductor wafer affixed to the dicing tape can be efficiently cut.

(19)

The dicing tape according to any one of the above (1) to (18), and

Having a die bond layer laminated on the pressure-sensitive adhesive layer of the dicing tape,

Dicing Die Bond Film.

According to such a structure, in the caph holding process, the caph can be more sufficiently maintained.

In addition, the dicing tape and the dicing die-bonding film according to the present invention are not limited to the above embodiment. In addition, the dicing tape and the dicing die-bonding film according to the present invention are not limited by the above-described effects. The dicing tape and dicing die-bonding film according to the present invention can be variously changed without departing from the gist of the present invention.

[Example]

Next, the present invention will be described in more detail with reference to examples. The following examples are for describing the present invention in more detail, and do not limit the scope of the present invention.

[Example 1]

<Molding of base material>

A three-layer structure of layer A/B/C layer using a two-type three-layer extrusion T-die molding machine (three layers with layer B as the center layer and layer A and C layer on both sides of layer B Structure) was molded. Metallocene PP (trade name: Wintech WXK1233, manufactured by Nippon Polypro) was used for the resins of layer A and C, and EVA (trade name: Evaflex EV250, manufactured by Mitsui DuPont Polychemical) was used for the resin of layer B. .

The extrusion molding was performed at a die temperature of 190°C. That is, the A layer, the B layer and the C layer were extrusion molded at 190°C. The thickness of the substrate obtained by extrusion molding was 100 µm. In addition, the ratio of the thicknesses (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer:B layer:C layer=1:10:1.

After sufficiently solidifying the molded base material, the solidified base material was wound up in a roll shape to obtain a roll body.

In addition, the coextrusion moldability of the substrate was good.

<Production of dicing tape>

A pressure-sensitive adhesive composition was applied from the roll-shaped substrate to one surface of the substrate using an applicator to a thickness of 10 μm. The substrate after application of the pressure-sensitive adhesive composition was heated and dried at 110° C. for 3 minutes to form a pressure-sensitive adhesive layer to obtain a dicing tape.

The pressure-sensitive adhesive composition was prepared as follows.

First, 173 parts by mass of INA (isononyl acrylate), 54.5 parts by mass of HEA (hydroxyethyl acrylate), 0.46 parts by mass of AIBN (2,2'-azobisisobutyronitrile), and 372 parts by mass of ethyl acetate were mixed. The 1st resin composition was obtained.

Subsequently, the first resin composition was added to the round bottom separable flask of the polymerization experiment apparatus equipped with a round bottom separable flask (capacity 1 L), a thermometer, a nitrogen introduction tube, and a stirring blade, and the first resin composition While stirring, the liquid temperature of the first resin composition was set to room temperature (23° C.), and the inside of the round bottom separable flask was purged with nitrogen for 6 hours.

In a state in which nitrogen was continuously introduced into the round bottom separable flask, while stirring the first resin composition, the liquid temperature of the first resin composition was maintained at 62° C. for 3 hours, and then maintained at 75° C. for 2 hours. , The INA, the HEA, and the AIBN were polymerized to obtain a second resin composition. Thereafter, the introduction of nitrogen into the round bottom separable flask was stopped.

After cooling the second resin composition until the liquid temperature reaches room temperature, as a compound having a polymerizable carbon-carbon double bond in the second resin composition, 2-isocyanatoethyl methacrylate (manufactured by Showa Denko , A third resin composition obtained by adding 52.5 parts by mass of the brand name "Carenz MOI (registered trademark)") and 0.26 parts by mass of dibutyltin dilaurate IV (manufactured by Wako Pure Chemical Industries, Ltd.) at a liquid temperature of 50°C at 24 Stirred for hours.

Subsequently, in the third resin composition, 0.75 parts by mass and 2 parts by mass of Coronate L (isocyanate compound) and Omnirad 127 (photopolymerization initiator) were added respectively to 100 parts by mass of the polymer solid content, and then ethyl acetate was used, The 3rd resin composition was diluted so that the solid content concentration might become 20 mass %, and the adhesive composition was prepared.

<Production of dicing die-bonding film>

100 parts by mass of acrylic resin (manufactured by Nagase Chemtex, brand name "SG-P3", glass transition temperature 12°C), 46 parts by mass of epoxy resin (manufactured by Mitsubishi Chemical Corporation, brand name "JER1001"), phenol resin (manufactured by Meiwa Kasei) , Brand name "MEH-7851ss") 51 parts by mass, spherical silica (made by Admatex, brand name "SO-25R") 191 parts by mass and curing catalyst (made by Shikoku Kasei Kogyo, brand name "Curesol PHZ") 0.6 parts by mass , Methyl ethyl ketone was added and mixed to obtain a die-bonding composition having a solid content concentration of 20% by mass.

Then, the die-bonding composition was applied to a thickness of 10 μm using an applicator on the silicone-treated surface of a PET-based separator (thickness 50 μm) as a release liner, dried at 130° C. for 2 minutes, and the die-bonding composition From the solvent removal, a die-bonding sheet in which a die-bonding layer was laminated on the release liner was obtained.

Next, after bonding the side of the die-bonding sheet to which the release sheet is not laminated on the pressure-sensitive adhesive layer of the dicing tape, the release liner is peeled from the die-bonding layer to form a die-bonding layer. The provided dicing die-bonding film was obtained.

For the dicing die-bonding film obtained as described above, the cut property of the wafer and the die bond layer (hereinafter referred to as the cut property) and the rise of the die bond layer from the dicing tape (hereinafter, the die bond layer (Referred to as lifting) and the retainability of the calf were evaluated.

(Evaluation of splitting property)

A bare wafer (300 mm in diameter) and a dicing ring were affixed to the dicing die-bonding film according to Example 1. Subsequently, the die separator DDS230 (manufactured by Disco Corporation) was used to cut the bare wafer and the die bond layer to evaluate the cleavability.

The bare wafer was cut into bare chips having a length of 3.2 mm x a width of 1.4 mm x a thickness of 0.025 mm.

The cleavage property was evaluated in detail as follows.

First, with a cool expander unit, the bare wafer and the die bond layer were cut under the conditions of an expand temperature of -5°C, an expand speed of 100 mm/sec, and an expand amount of 14 mm to obtain a semiconductor chip having a die bond layer.

Next, room temperature expansion was performed under the conditions of room temperature, an expand speed of 1 mm/sec, and an expand amount of 10 mm. Then, while maintaining the expanded state, the dicing die-bonding film at the boundary portion of the bare wafer was heat-shrunk under conditions of a heat temperature of 200°C, a heat distance of 18 mm, and a rotation speed of 5°/sec.

Subsequently, the cutting portion of the semiconductor chip provided with the die-bonding layer was observed by microscopic observation, and the breaking rate was calculated. And the case where the cleaving rate was 90% or more was evaluated as ○, and the case where the cleaving rate was less than 90% was evaluated as x.

(Evaluation of lifting of die bond layer)

A bare wafer (300 mm in diameter) and a dicing ring were affixed to the dicing die-bonding film according to Example 1. Next, the bare wafer and the die bond layer were cleaved using the die separator DDS230 (manufactured by Disco Corporation), and the lifting of the die bond layer after cleaving was evaluated.

The bare wafer was cut into bare chips having a length of 12 mm x a width of 4 mm x a thickness of 0.055 mm.

In addition, as a bare wafer, a warped wafer was used.

The warped wafer was produced as follows.

First, the following (a) to (f) were dissolved in methyl ethyl ketone to obtain a warpage adjusting composition having a solid content concentration of 20% by mass.

(a) Acrylic resin (manufactured by Nagase Chemtex, brand name "SG-70L"): 5 parts by mass

(b) Epoxy resin (manufactured by Mitsubishi Chemical Corporation, brand name "JER828"): 5 parts by mass

(c) Phenol resin (made by Meiwa Kasei, brand name "LDR8210"): 14 parts by mass

(d) Epoxy resin (manufactured by Mitsubishi Chemical Corporation, brand name "MEH-8005"): 2 parts by mass

(e) Spherical silica (manufactured by Admatex, brand name "SO-25R"): 53 parts by mass

(f) Phosphorus catalyst (TPP-K): 1 part by mass

Subsequently, the warpage control composition was applied to a silicone-treated side of a PET-based separator (thickness 50 μm), a release liner, to a thickness of 25 μm using an applicator, and dried at 130° C. for 2 minutes, from the warpage control composition. The solvent was removed to obtain a warpage control sheet having a warp control layer laminated on the release liner.

Then, on the side of the warpage adjustment sheet on which the release liner is not laminated, a bare wafer is affixed under conditions of 60°C, 0.1 MPa, and 10 mm/s using a laminator (manufactured by MCK, Model MRK-600). Then, it was put in an oven and heated at 175°C for 1 hour to thermally cure the resin in the warp control layer, thereby shrinking the warp control layer to obtain a warped bare wafer.

After shrinking the warpage control layer, a wafer processing tape (manufactured by Nitto Denko Corporation, brand name ``V-12SR2'') is affixed to the side of the bent bare wafer on which the warp control layer is not laminated. A dicing ring was fixed to the bent bare wafer through the wafer processing tape. Thereafter, the warpage control layer was removed from the warped bare wafer.

Using a dicing device (manufactured by DISCO, Model No. 6361), a groove having a depth of 100 µm from this surface is formed over the entire surface (hereinafter referred to as one surface) of the bent bare wafer from which the warpage adjustment layer is removed. It was formed in a grid shape (20 μm in width).

Next, a back grind tape was bonded to one side of the curved bare wafer, and the wafer processing tape was removed from the other side of the curved bare wafer (the side opposite to the one side).

Next, using a back grinder (manufactured by DISCO, Model DGP8760), the wafer obtained by grinding the bent bare wafer from the other side so that the thickness of the bent bare wafer becomes 55 µm (0.055 mm) was used as a warped wafer.

The lifting of the die-bonding layer was evaluated in detail as follows.

In the dicing die-bonding film according to Example 1, the area of the area where the die-bonding layer is lifted from the dicing tape (the ratio of the area of the die-bonding layer that is lifted when the total area of the die-bonding layer is 100%) Was observed under a microscope, and the excited area of the die-bonding layer was calculated. And the case where the excitation area of the die-bonding layer was less than 30% was evaluated as ?, and the case where it was 30% or more was evaluated as x.

(Evaluation of calf retention)

A bare wafer (300 mm in diameter) and a dicing ring were affixed to the dicing die-bonding film according to Example 1. Next, the bare wafer and the die bond layer were cleaved using the die separator DDS230 (manufactured by Disco Corporation), and the capping retention properties after cleaving were evaluated.

The bare wafer was cut into bare chips having a length of 12 mm x a width of 4 mm x a thickness of 0.055 mm.

In addition, as a bare wafer, a warped wafer was used. The warped wafer was produced in the same manner as above.

The calf retention was evaluated in detail as follows.

First, with a cool expander unit, a semiconductor wafer and a die bond layer were cut off under conditions of an expand temperature of -5°C, an expand speed of 100 mm/sec, and an expand amount of 12 mm to obtain a semiconductor chip with a plurality of die bond layers. After slicing, by microscopic observation, the spacing between the plurality of warped chips with the die-bonding layer was measured (hereinafter referred to as the chip spacing after slicing). The spacing between the bending chips with a plurality of die-bonding layers was determined by measuring the spacing of 10 arbitrary points and arithmetic average.

Next, room temperature expansion was performed under the conditions of room temperature, an expand speed of 1 mm/sec, and an expand amount of 5 mm. Then, while maintaining the expanded state, the dicing die bond film at the boundary portion of the semiconductor wafer was heat-shrunk under conditions of a heat temperature of 200°C, a heat distance of 18 mm, and a rotation speed of 5°/sec. After heat shrinkage, the distance between the semiconductor chips with a plurality of die-bonding layers (hereinafter referred to as chip spacing after heat shrinkage) was measured by microscopic observation. The spacing between the semiconductor chips with a plurality of die-bonding layers was determined by measuring the spacing of 10 arbitrary points and arithmetic average.

Subsequently, the reduction ratio of the chip spacing after the heat shrinkage to the chip spacing after the cleavage was calculated. And the case where the reduction ratio was less than 10% was evaluated as ○, and the case where the reduction ratio was 10% or more was evaluated as x.

(Measurement of melting point)

Melting points were measured for Wintech WXK1233, which is a resin of A layer and C layer, and Evaflex EV250, which is a resin of B layer. The measured melting point is shown in Table 1 below.

The measurement of the melting point was performed under the following conditions.

That is, by using a differential scanning calorimeter (DSC Q2000 manufactured by TA Instruments), the temperature was raised to 200°C at a temperature increase rate of 5°C/min under a nitrogen gas stream, and the peak temperature of the endothermic peak was determined.

(Measurement of number average molecular weight, mass average molecular weight and molecular weight dispersion degree)

The number average molecular weight and the mass average molecular weight of Wintech WXK1233, which is a resin of layer A and layer C, were measured under the following conditions.

Moreover, the molecular weight dispersion degree (mass average molecular weight/number average molecular weight) of Wintech WXK1233 was calculated|required from the number average molecular weight and mass average molecular weight measured under the following conditions.

Measurement device: manufactured by Waster, type "Alliance GPC 2000 type"

Column: Two TSkgel GMH6-HT (manufactured by Tosoh Corporation) connected in series, and two TSKgel GMH-HTL connected in series on the downstream side

Column size: Both TSKgel GMH6-HT and TSKgel GMH-HTL are 7.5 mm inner diameter × 300 mm long

·Column temperature: 140℃

Flow rate: 1.0 mL/min

Eluent: o-dichlorobenzene

Sample preparation concentration: 0.10% by mass (dissolved in o-dichlorobenzene)

・Sample injection volume: 40μL

Detector: RI (differential refractometer)

·Standard sample: Polystyrene

[Example 2]

Except having set the base material to 80 micrometers, it carried out similarly to Example 1, and obtained the dicing die-bonding film concerning Example 2. In addition, the coextrusion moldability of the substrate was good.

In addition, about the dicing die-bonding film according to Example 2, it carried out similarly to Example 1, and evaluated the cleavage property, the lifting of the die-bonding layer, and the retention of the capp.

[Example 3]

Except having set the base material to 150 micrometers, it carried out similarly to Example 1, and obtained the dicing die-bonding film concerning Example 3. In addition, the coextrusion moldability of the substrate was good.

In addition, about the dicing die-bonding film according to Example 3, it carried out similarly to Example 1, and evaluated the cleavage property, the lifting of the die-bonding layer, and the retention of the capp.

[Example 4]

Dicing according to Example 4 in the same manner as in Example 1, except that the resin constituting the B layer (center layer) of the base material was used as Evaflex EV550 (manufactured by Mitsui DuPont Polychemical) and the base material was set to 80 µm. A die bond film was obtained. In addition, the coextrusion moldability of the substrate was good.

In addition, about the dicing die-bonding film according to Example 4, it carried out similarly to Example 1, and evaluated the cleavage property, the lifting of the die-bonding layer, and the retention of the capp.

In addition, about Evaflex EV550, the melting point was measured in the same manner as in Example 1. The measured melting point is shown in Table 1 below.

[Example 5]

A dicing die-bonding film according to Example 5 was obtained in the same manner as in Example 1, except that the resin of the B layer was used as a propylene elastomer (trade name: Vistamax 3980, manufactured by Exxon Mobil Chemical). In addition, the coextrusion moldability of the substrate was good.

In addition, about the dicing die-bonding film according to Example 5, it carried out similarly to Example 1, and evaluated about the cutting property, lifting of a die-bonding layer, and retention of a capp.

In addition, about Vistamax 3980, it carried out similarly to Example 1, and measured the melting point. The measured melting point is shown in Table 1 below.

[Example 6]

Dicing die bonding according to Example 6 in the same manner as in Example 1, except that the thickness of the base material was set to 80 µm and the layer thickness ratio of the base material was set to A layer:B layer:C layer = 1:4:1. I got a film. In addition, the coextrusion moldability of the substrate was good.

In addition, about the dicing die-bonding film according to Example 6, it carried out similarly to Example 1, and evaluated the cleavage property, the lifting of the die-bonding layer, and the retention of the capp.

[Example 7]

Dicing die bonding according to Example 7 in the same manner as in Example 1, except that the thickness of the substrate was set to 80 µm and the layer thickness ratio of the substrate was set to A layer:B layer:C layer=1:20:1. I got a film. In addition, the coextrusion moldability of the substrate was good.

In addition, about the dicing die-bonding film according to Example 7, it carried out similarly to Example 1, and evaluated the cleavage property, the lifting of the die-bonding layer, and the retention of the capp.

[Example 8]

A dicing die-bonding film according to Example 8 was obtained in the same manner as in Example 1, except that the metallocene PP constituting the A layer and the C layer (outer layer) of the substrate was used as Wintech WMX03 (manufactured by Nippon Polypro). . In addition, the coextrusion moldability of the substrate was good.

In addition, about the dicing die-bonding film according to Example 8, it carried out similarly to Example 1, and evaluated the cleavage property, the lifting of the die-bonding layer, and the retention of the capp.

[Comparative Example 1]

Comparative Example 1 was carried out in the same manner as in Example 1, except that the resin constituting the layer A and the layer C (outer layer) of the base material was used as non-metallocene random PP (brand name: Novatic PP EG7FT, manufactured by Nippon Polypro). A related dicing die-bonding film was obtained. In addition, the coextrusion moldability of the substrate was poor.

In addition, about the dicing die-bonding film according to Comparative Example 1, it carried out similarly to Example 1, and evaluated about the cleavage property, the lifting of the die-bonding layer, and the retention of the capp.

In addition, about Novatic PP EG7FT, it carried out similarly to Example 1, and measured the melting point. The measured melting point is shown in Table 1 below.

[Comparative Example 2]

Comparative Example 2 was carried out in the same manner as in Example 1, except that the resin constituting the layer A and the layer C (outer layer) of the substrate was made of non-metallocene low-density polyethylene (brand name: Novatic LC LC720, manufactured by Nippon Polypro). A related dicing die-bonding film was obtained. In addition, the coextrusion moldability of the substrate was good.

In addition, about the dicing die-bonding film according to Comparative Example 2, in the same manner as in Example 1, severability, lifting of the die-bonding layer, and retention of the capp were evaluated.

In addition, about Novatic LC LC720, it carried out similarly to Example 1, and measured the melting point. The measured melting point is shown in Table 1 below.

[Comparative Example 3]

A dicing die-bonding film according to Comparative Example 3 was obtained in the same manner as in Example 1 except that the resin constituting the A layer and the C layer (outer layer) of the base material was used as Evaflex EV250. In addition, the coextrusion moldability of the substrate was good.

In addition, about the dicing die-bonding film according to Comparative Example 3, in the same manner as in Example 1, severability, lifting of the die-bonding layer, and retention of the capp were evaluated.

[Comparative Example 4]

A dicing die-bonding film according to Comparative Example 4 was obtained in the same manner as in Example 1, except that the resin constituting the A layer, B layer, and C layer of the substrate was set to Vistamax 3980. In addition, the coextrusion moldability of the substrate was good.

In addition, about the dicing die-bonding film according to Comparative Example 4, in the same manner as in Example 1, the cleavage property, the lift of the die-bonding layer, and the holding property of the cap were evaluated.

[Comparative Example 5]

A dicing die-bonding film according to Comparative Example 5 was obtained in the same manner as in Example 1, except that the resin constituting the layer B of the substrate was set to Wintech WXK1233. In addition, the coextrusion moldability of the substrate was good.

In addition, about the dicing die-bonding film according to Comparative Example 5, it carried out similarly to Example 1, and evaluated about the cleavage property, the lifting of the die-bonding layer, and the capping retention property.

About the dicing die-bonding film of each example, the result of evaluation about the coextrusion property of a base material, a cleavage property, lifting of a die-bonding layer, and a cap holding property are shown in Table 1 below.

From Table 1, the dicing die-bonding films according to Examples 1 to 8 have good coextrusion moldability of the base material, excellent severability, can suppress the lifting of the die-bonding layer, and have caph retention properties. It can be seen that it is good.

In contrast, it can be seen that the dicing die-bonding film according to Comparative Example 1 is excellent in cutting properties and can suppress the lifting of the die-bonding layer, but the coextrudability of the substrate is poor, and the caps cannot be sufficiently maintained. .

In addition, it can be seen that the dicing die-bonding film according to Comparative Example 2 has good coextrusion formability of the base material, excellent severability, and can suppress the lifting of the die-bonding layer, but cannot sufficiently retain the capp. have.

In addition, the dicing die-bonding films according to Comparative Examples 3 and 4 have good co-extrusion moldability of the base material and excellent severability, but the lifting of the die-bonding layer cannot be sufficiently suppressed, and the caps cannot be sufficiently maintained. Can be seen.

In addition, it was found that the dicing die-bonding film according to Comparative Example 5 had good coextrusion moldability of the base material, but had poor cleavage properties, could not sufficiently suppress the lifting of the die-bonding layer, and could not sufficiently retain the capp. I can.

In addition, although the result shown in Table 1 relates to a dicing die-bonding film, also in the dicing tape contained in a dicing die-bonding film, the same result as shown in Table 1 is expected to be obtained.

1: description
2: adhesive layer
3: die bond layer
10: dicing tape
20: dicing die bond film
1a: first resin layer
1b: second resin layer
1c: third resin layer
G: Back Grind Tape
H: maintenance tool
J: adsorption jig
P: pin member
R: dicing ring
T: Wafer processing tape
U: push-up member
W: semiconductor wafer

Claims (8)

It is a dicing tape in which an adhesive layer is laminated on a substrate,
The substrate includes a first resin layer comprising a first resin having a molecular weight dispersion degree of 5 or less, a second resin layer laminated on one surface of the first resin layer, and the second resin layer on the opposite side of the first resin layer. Having a third resin layer laminated on the second resin layer,
The second resin layer has a lower tensile storage modulus at room temperature than the first resin layer and the third resin layer.
Dicing tape. The method of claim 1, wherein the first resin has a melting point of 115°C or more and 130°C or less.
Dicing tape. The method according to claim 1 or 2, wherein the first resin has a mass average molecular weight of 100000 or more and 1000000 or less, and a number average molecular weight of 20000 or more and 600000 or less.
Dicing tape. The method of claim 1 or 2, wherein the first resin comprises a polypropylene resin which is a polymerized product by a metallocene catalyst.
Dicing tape. The method according to claim 1 or 2, wherein the thickness of the substrate is 60 μm or more and 160 μm or less,
The ratio of the thickness of the first resin layer to the thickness of the second resin layer is in the range of 1/4 to 1/20,
The ratio of the thickness of the third resin layer to the thickness of the second resin layer is in the range of 1/4 to 1/20
Dicing tape. The method according to claim 1 or 2, wherein the second resin layer contains an α-olefin-based thermoplastic elastomer.
Dicing tape. The method of claim 6, wherein the α-olefin-based thermoplastic elastomer comprises at least one of an α-olefin homopolymer or an α-olefin copolymer.
Dicing tape. The dicing tape according to claim 1 or 2, and
Having a die bond layer laminated on the pressure-sensitive adhesive layer of the dicing tape
Dicing Die Bond Film.

Images