TW202111056A - Dicing tape and dicing die-bonding film - Google Patents

Abstract

A dicing tape according to the present invention includes a base and an adhesive layer laminated on the base, wherein the base includes a first resin layer including a first resin with a poly-dispersity index of 5 or less, a second resin layer laminated on one side of the first resin layer, and a third resin layer laminated on the opposite side of the second resin layer to the first layer, wherein the second resin layer has a tensile storage elastic modulus at room temperature being lower than the first resin layer and the second resin layer.

Description

Slicing tape and slicing crystal mucosal film

The invention relates to a dicing tape and a dicing crystal sticking film. In more detail, it relates to a dicing tape and a dicing die sticking film with a substrate having a layered structure.

It is known that in the manufacture of semiconductor devices, a dicing die-bonding film is used in order to obtain a semiconductor chip for die-bonding. The chip adhesive film includes: a die bond tape formed by laminating an adhesive layer on a substrate; and a die bond layer laminated on the adhesive layer of the die bond tape.

In addition, as a method of obtaining a semiconductor wafer (Die) for die bonding using the above-mentioned die-cutting die-bonding film, a method having the following steps is adopted: a half-cutting step, which is used to process the semiconductor wafer into a die through a cutting process. ) And forming a groove on the semiconductor wafer, and then grinding the semiconductor wafer to make the thickness thin; the back grinding step, which grinds the semiconductor wafer after the half-cutting step to make the thickness thin; the mounting step, it will After the back grinding step, one side of the semiconductor wafer (for example, the side opposite to the circuit surface) is attached to the die-bonding layer to fix the semiconductor wafer to the dicing tape; the expansion step is to remove the half-cut semiconductor wafer The gap between each other is enlarged; the incision maintaining step is to maintain the distance between the semiconductor chips; the picking step is to peel off between the die-bonding layer and the adhesive layer, and take out the semiconductor wafer with the die-bonding layer attached; and bonding the die In the step, the semiconductor chip in the state where the die-bonding layer is attached is attached to the adherend (such as the mounting substrate, etc.). Furthermore, in the above-mentioned notch maintaining step, hot air (for example, 100~130°C) is aligned with the dicing tape so that the dicing tape is thermally contracted and then cooled and solidified, so as to maintain the distance between the cut adjacent semiconductor wafers (incision).

It is known that in the notch maintaining step of the method of obtaining a semiconductor wafer for die bonding as described above, in order to more adequately maintain the notch, the physical properties of the dicing tape and the physical properties of the substrate satisfy a specific relationship (for example, Patent Document 1). [Prior Technical Literature] [Patent Literature]

[Patent Document 1] International Publication No. 2016/152919

[The problem to be solved by the invention]

However, in order to more adequately maintain the incision in the incision maintenance step, further studies are urgently desired.

Therefore, the subject of the present invention is to provide a dicing tape and a dicing die sticking film that can more fully maintain the notch. [Technical means to solve the problem]

The slicing tape system of the present invention It is formed by laminating an adhesive layer on the substrate, and The base material includes: a first resin layer including a first resin having a molecular weight dispersion of 5 or less; a second resin layer laminated on one surface of the first resin layer; and a third resin layer Laminated on the second resin layer on the opposite side of the first resin layer, The tensile storage modulus of the second resin layer at room temperature is lower than that of the first resin layer and the third resin layer.

Among the above-mentioned dicing tapes, preferably The above-mentioned first resin has a melting point of 115°C or more and 130°C or less.

Among the above-mentioned dicing tapes, preferably The first resin has a mass average molecular weight of 100,000 or more and 1,000,000 or less, and a number average molecular weight of 20,000 or more and 600,000 or less.

Among the above-mentioned dicing tapes, preferably The above-mentioned first resin includes polypropylene resin as a polymerization product obtained by using a metallocene catalyst.

Among the above-mentioned dicing tapes, preferably The thickness of the above-mentioned substrate is 60 μm or more and 160 μm or less, The ratio of the thickness of the first resin layer to the thickness of the second resin layer is in the range of 1/4 to 1/20, The ratio of the thickness of the third resin layer to the thickness of the second resin layer is in the range of 1/4 to 1/20.

Among the above-mentioned dicing tapes, preferably The second resin layer includes an α-olefin-based thermoplastic elastomer.

Among the above-mentioned dicing tapes, preferably The above-mentioned α-olefin-based thermoplastic elastomer contains at least one of a homopolymer of α-olefin or a copolymer of α-olefin.

The diced chip adhesive film of the present invention has: The above-mentioned dicing tape, and The adhesive layer laminated on the adhesive layer of the above-mentioned dicing tape.

Hereinafter, an embodiment of the present invention will be described.

[Cut Crystal Strip] As shown in FIG. 1, the dicing tape 10 of this embodiment is a dicing tape 10 formed by laminating an adhesive layer 2 on a substrate 1. The base material 1 includes: a first resin layer 1a containing a first resin having a molecular weight dispersion of 5 or less; a second resin layer 1b laminated on one surface of the first resin layer 1a; and a third resin layer 1c, which Laminated on the second resin layer 1b on the side opposite to the first resin layer 1a, and the tensile storage modulus of the second resin layer 1b at room temperature (23°C) is lower than that of the first resin layer 1a and the third resin layer 1c . In addition, the second resin layer 1b contains the second resin, and the third resin layer 1c contains the first resin. Here, the molecular weight dispersion of the first resin means the ratio of the mass average molecular weight of the first resin to the number average molecular weight of the first resin.

The reason why the base material 1 is provided with the first resin layer 1a including the first resin having a molecular weight dispersion degree of 5 or less to more fully maintain the cut is considered as follows. It is believed that the first resin exhibits a relatively small molecular weight dispersion of 5 or less, that is, the first resin is a resin with a relatively uniform molecular weight. Therefore, in the first resin layer containing this first resin, the temperature at which the layer melts changes It's relatively even. Moreover, it is believed that by making the temperature at which the layer melts relatively uniform, and in the incision maintaining step, when the hot air (for example, 100~130°C) is directed to the dicing tape 10 to thermally shrink the dicing tape 10, it is cooled and solidified. The part of the layer melted by the hot air can be solidified at a relatively uniform speed. That is, it is considered that the molten layer portion can be solidified relatively quickly to the extent that there is no deviation in the speed at which the molten layer portion solidifies. As a result, it is considered that the shrinkage of the base material 1 can be more fully suppressed after the dicing tape 10 is heat-shrinked, and the cut can be maintained more fully.

The number average molecular weight and mass average molecular weight of the first resin can be measured by GPC under the following conditions. • Measuring device: Model "Alliance GPC 2000" manufactured by Waster •Tube string: two TSkgel GMH6-HT (manufactured by Mitsui DuPont Chemical Co., Ltd.) are connected in series, and two TSKgel GMH-HTLs are connected in series on the downstream side. • Column size: TSKgel GMH6-HT and TSKgel GMH-HTL both have an inner diameter of 7.5 mm × a length of 300 mm • Column temperature: 140℃ • Flow rate: 1.0 mL/min • Eluent: o-dichlorobenzene •Sample preparation concentration: 0.10% by mass (dissolved in o-dichlorobenzene) •Sample injection volume: 40 μL •Detector: RI (differential refractometer) • Standard sample: polystyrene

As the first resin layer 1a and the third resin layer 1c, a resin layer having a tensile storage modulus of 10 MPa or more and 100 MPa or less at room temperature can be cited, and as the second resin layer 1b, a resin layer having a tensile storage modulus at room temperature can be cited. Resin layer with a storage modulus of 200 MPa or more and 500 MPa or less.

The tensile storage modulus at room temperature can be measured as follows. Specifically, it can be determined by using a dicing tape with a length of 40 mm (measurement length) and a width of 10 mm as a test piece, and using a solid viscoelasticity measuring device (for example, model RSAIII, manufactured by Rheometric Scientific Co., Ltd.) ，Measure the tensile storage modulus of the above test piece in the temperature range of -50~100℃ under the conditions of frequency 1 Hz, strain amount of 0.1%, heating rate of 10℃/min, and distance between fixtures of 22.5 mm. At this time, read the value at 23°C and use it as the tensile storage modulus at 23°C. In addition, the above-mentioned measurement was performed by stretching the above-mentioned test piece in the MD direction (resin flow direction).

As the first resin, it is preferable to use a non-elastomeric body. As the non-elastomer, polypropylene resin (hereinafter referred to as metallocene PP) which is a polymerization product obtained by using a metallocene catalyst can be cited. As the metallocene PP, a propylene/α-olefin copolymer which is a polymerization product obtained by using a metallocene catalyst can be cited. By making the first resin layer 1a and the third resin layer 1c contain the metallocene PP, the dicing tape can be manufactured efficiently, and the semiconductor wafer attached to the dicing tape can be cut efficiently. In addition, as commercially available metallocene PP, WINTEC WXK1233 and WINTEC WMX03 (both are manufactured by Nippon Polypropylene Co., Ltd.) can be cited.

Here, the metallocene catalyst includes a transition metal compound (so-called metallocene compound) and co-catalyst of Group 4 of the Periodic Table. The transition metal compound of Group 4 of the Periodic Table includes a catalyst having a cyclopentadienyl skeleton. For the ligand, the aforementioned co-catalyst can react with the metallocene compound to activate the metallocene compound into a stable ionic state, and if necessary, the aforementioned metallocene catalyst contains an organoaluminum compound. The metallocene compound is a cross-linked metallocene compound that can realize stereoregular polymerization of propylene.

Among the above-mentioned propylene/α-olefin copolymers as a polymerization product obtained by using a metallocene catalyst, a propylene/α-olefin random copolymer as a polymerization product obtained by using a metallocene catalyst is preferred. Among the propylene/α-olefin random copolymers of the polymerization product obtained by the catalyst, it is preferred to be selected from the propylene/α-olefin random copolymers of the polymerization product obtained by using a metallocene catalyst. Either of the propylene/α-olefin random copolymer with 4 carbon atoms, which is a polymerization product obtained by using a metallocene catalyst, and a propylene/α-olefin random copolymer with 5 carbon atoms, which is a polymerization product obtained by using a metallocene catalyst Among them, the most preferred is a propylene/ethylene random copolymer as a polymerization product obtained by using a metallocene catalyst.

Regarding the above-mentioned propylene/α-olefin random copolymer, which is a polymerization product obtained by using a metallocene catalyst, the co-extrusion film-forming property with the above-mentioned elastomer layer and the cutting of semiconductor wafers attached to the dicing tape From the viewpoint of properties, those having a melting point of 80°C or more and 140°C or less, especially 100°C or more and 130°C or less are preferred. The melting point of the above-mentioned propylene/α-olefin random copolymer as a polymerization product obtained by using a metallocene catalyst can be determined by differential scanning calorimetry (DSC) analysis. For example, the measurement can be performed by using a differential scanning calorimeter device (Model DSC Q2000 manufactured by TAINSTRUMENTS) under nitrogen gas flow at a heating rate of 5°C/min to 200°C to obtain the peak temperature of the endothermic peak. The first resin preferably has a mass average molecular weight of 100,000 or more and 1,000,000 or less, and a number average molecular weight of 20,000 or more and 600,000 or less.

As the second resin, an elastomer is preferably used. As the elastomer, for example, an α-olefin-based thermoplastic elastomer and the like can be cited. Examples of α-olefin-based thermoplastic elastomers include homopolymers of α-olefins, copolymers of two or more α-olefins, block polypropylene, random polypropylene, and one or two or more α-olefins. Copolymers with other vinyl monomers, etc. Examples of the α-olefin-based thermoplastic elastomer include a combination of a propylene-ethylene copolymer and a propylene homopolymer, or a propylene-ethylene-α-olefin terpolymer having a carbon number of 4 or more. Examples of commercially available products of α-olefin-based thermoplastic elastomers include Vistamaxx 3980 (manufactured by ExxonMobil Chemical Co., Ltd.) which is a propylene-based elastomer resin.

As the homopolymer of α-olefin, a homopolymer of α-olefin having a carbon number of 2 or more and 12 or less is preferable. As such a homopolymer, ethylene, propylene, 1-butene, 4-methyl-1-pentene, etc. are mentioned.

Examples of copolymers of two or more α-olefins include: ethylene/propylene copolymer, ethylene/1-butene copolymer, ethylene/propylene/1-butene copolymer, ethylene/carbon number 5 to 12 Α-olefin copolymers, propylene/ethylene copolymers, propylene/1-butene copolymers, propylene/α-olefin copolymers with 5 to 12 carbon atoms, etc.

As a copolymer of one or two or more α-olefins and other vinyl monomers, ethylene-vinyl acetate copolymer (EVA) and the like can be cited.

When the base material 1 has a three-layer structure as described above, it is preferably obtained by co-extrusion molding. The co-extrusion molding is made by co-extruding the first resin and the second resin to form the second resin. The resin layer 1b has a laminated structure in which a first resin layer 1a and a third resin layer 1c are laminated on both sides. As the co-extrusion molding, any appropriate co-extrusion molding that is usually performed in the production of films, sheets, etc. can be adopted. In the co-extrusion molding, it is preferable to use the inflation method or the co-extrusion T-die method in terms of obtaining the base material 1 efficiently and inexpensively.

When the second resin layer 1b contains an α-olefin-based thermoplastic elastomer and the first resin layer 1a and the third resin layer 1c contain polyolefins such as metallocene PP, the second resin layer 1b is preferably relative to the first resin layer 1b. 2 The total mass of the elastomer contained in the resin layer 1b includes 50% by mass or more and 100% by mass or less of α-olefin-based thermoplastic elastomer, more preferably 70% by mass or more and 100% by mass or less, and more preferably The content is 80% by mass or more and 100% by mass or less, more preferably 90% by mass or more and 100% by mass or less, and most preferably 95% by mass or more and 100% by mass or less. By including the α-olefin-based thermoplastic elastomer in the above-mentioned range, the affinity between the first resin layer 1a and the second resin layer 1b and the affinity between the third resin layer 1c and the second resin layer 1b are increased, so that it can be relatively easy The base material 1 can be extruded and formed, and the semiconductor wafer attached to the dicing tape can be cut efficiently.

When the base material 1 with a laminated structure is obtained by co-extrusion molding, the first resin layer 1a and the second resin layer 1b, and the third resin layer 3c and the second resin layer 1b are heated and melted Since the lower phase is in contact, it is preferable that the melting point difference between the first resin and the second resin is small. By making the difference in melting point small, the application of excessive heat to the low-melting resin is suppressed, and the generation of by-products due to thermal degradation of the low-melting resin can be suppressed. In addition, it is also possible to suppress the excessive decrease in the viscosity of the low-melting resin, resulting in build-up defects between the first resin layer 1a and the second resin layer 1b, and between the third resin layer 1c and the second resin layer 1b. The melting point difference between the first resin and the second resin is preferably 0°C or more and 70°C or less, more preferably 0°C or more and 55°C or less. The melting points of the first resin and the second resin can be measured by the method described above.

The thickness of the substrate 1 is preferably 55 μm or more and 195 μm or less, more preferably 55 μm or more and 190 μm or less, still more preferably 55 μm or more and 170 μm or less, and most preferably 60 μm or more and 160 μm or less. By setting the thickness of the base material 1 within the above-mentioned range, the dicing tape can be manufactured efficiently, and the semiconductor wafer attached to the dicing tape can be cut efficiently. The thickness of the base material 1 can be obtained by, for example, measuring the thickness at five randomly selected locations using a dial gauge (model R-205 manufactured by PEACOCK), and arithmetically averaged these thicknesses.

In the base material 1, the ratio of the thickness of the first resin layer 1a to the thickness of the second resin layer 1b and the ratio of the thickness of the third resin layer 1c to the thickness of the second resin layer 1b are preferably 1/25 or more And 1/3 or less, more preferably 1/25 or more and 1/3.5 or less, still more preferably 1/25 or more and 1/4, particularly preferably 1/22 or more and 1/4 or less, most preferably 1/ 20 or more and 1/4 or less. By setting the ratio of the thickness of the first resin layer 1a to the thickness of the second resin layer 1b and the ratio of the thickness of the third resin layer 1c to the thickness of the second resin layer 1b in the above ranges, higher efficiency can be achieved Ground cutting of the semiconductor wafer attached to the dicing tape. The thickness of the 1st resin layer 1a, the 2nd resin layer 1b, and the 3rd resin layer 1c can be calculated|required by observing the cross section cut out from the 1st resin layer 1 by the cryosection method with a microscope. For example, it can be obtained by observing the central part of the cross section cut by cryosectioning using an electron microscope at 100 times magnification. For the first resin layer 1a, the second resin layer 1b, and the third resin layer 1c, Measure the thickness at 3 randomly selected locations along the MD direction (resin flow direction), and calculate the arithmetic average of the measured values at the 3 locations obtained by the measurement of each layer.

The first resin layer 1a and the third resin layer 1c may have a single layer (single layer) structure or a laminated structure. The first resin layer 1a preferably has a 1-layer to 5-layer structure, more preferably a 1-layer to 3-layer structure, still more preferably a 1-layer to 2-layer structure, and most preferably has a 1-layer structure. When the first resin layer 1a and the third resin layer 1c have a laminated structure, all layers may include the same first resin, or at least two layers may include different first resins.

The second resin layer 1b may have a single-layer (one-layer) structure or a multilayer structure. The second resin layer 1b preferably has a 1-layer to 5-layer structure, more preferably a 1-layer to 3-layer structure, further preferably a 1-layer to 2-layer structure, and most preferably a 1-layer structure. When the second resin layer 1b has a laminated structure, all layers may include the same second resin, or at least two layers may include different second resins.

Here, if the elastomer layer is arranged on the outermost layer of the substrate 1, when the substrate 1 is made into a roll, the elastomer layers arranged on the outermost layer become easy to adhere to each other (easy to stick together) . Therefore, it becomes difficult to rewind the base material 1 from the rolled body. In contrast, in the substrate 1 of this embodiment, the first resin layer 1a and the third resin layer 1c are non-elastomeric layers, and the first resin layer 1b is an elastomer layer, that is, a non-elastomeric layer is arranged on the outermost layer. The base material 1 in this aspect has excellent blocking resistance. Thereby, it is possible to suppress the delay in the manufacture of the semiconductor device using the dicing tape 10 due to adhesion.

The first resin layer 1a is preferably composed of a resin having a melting point of 115°C or more and 130°C or less and a molecular weight dispersion (mass average molecular weight/number average molecular weight) of 5 or less. As such resin, metallocene PP can be mentioned. By making the first resin layer 1a composed of the above-mentioned resin, it is possible to use hot air (e.g., 100~130°C) in order to maintain the gap (notch) between a plurality of semiconductor wafers obtained by cutting the semiconductor wafer at a low temperature. After touching the dicing tape at the boundary portion with the outer periphery of the semiconductor wafer to thermally shrink the dicing tape, the time required to solidify the non-elastomeric layer (outermost layer) melted by contact with hot air can be relatively shortened. Thereby, the incision can be maintained more appropriately.

The adhesive layer 2 contains an adhesive. The adhesive layer 2 holds the semiconductor wafer to be singulated into semiconductor chips by adhesion. In this embodiment, the adhesive layer 2 is laminated on the first resin layer 1a of the base material 1.

Examples of the above-mentioned adhesive include those that can reduce the adhesive force by an external action during the use of the dicing tape 10 (hereinafter referred to as an adhesive reduction type adhesive).

In the case of using a reduced adhesion type adhesive as the adhesive, during the use of the dicing tape 10, the adhesive layer 2 can be used separately to show a relatively high adhesion state (hereinafter referred to as a high adhesion state) and display A state of relatively low adhesion (hereinafter referred to as low adhesion state). For example, when the semiconductor wafer attached to the dicing tape 10 is used for cutting, in order to suppress the swelling or peeling of the plurality of semiconductor wafers singulated by cutting the semiconductor wafer from the adhesive layer 2, high Adhesion state. In contrast, after cutting the semiconductor wafer, in order to pick up a plurality of singulated semiconductor wafers, a low adhesion state is used to easily pick up the plurality of semiconductor wafers from the adhesive layer 2.

As the above-mentioned adhesion reduction type adhesive, for example, an adhesive that can be cured by irradiating radiation during the use of the dicing tape 10 (hereinafter referred to as a radiation curing adhesive).

Examples of the radiation curable adhesive include adhesives of the type that are cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X rays. Among them, it is preferable to use an adhesive that is cured by irradiating ultraviolet rays (ultraviolet curing adhesive).

Examples of the above-mentioned radiation-curable adhesives include additive radiation-curable adhesives, which include basic polymers such as acrylic polymers, and radiation-polymerizable monomer components with functional groups such as radiation-polymerizable carbon-carbon double bonds. Or radiation polymerizable oligomer component.

Examples of the acrylic polymer include those containing monomer units derived from (meth)acrylate. Examples of (meth)acrylates include alkyl (meth)acrylates, cycloalkyl (meth)acrylates, and aryl (meth)acrylates.

The adhesive layer 2 may also include an external crosslinking agent. As the external crosslinking agent, any one can be used as long as it can react with the acrylic polymer as the base polymer to form a crosslinked structure. Examples of such external crosslinking agents include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based crosslinking agents.

Examples of the radiation polymerizable monomer components include: (meth)acrylate urethane, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate Base) acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, etc. Examples of the radiation polymerizable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene. The content ratio of the radiation polymerizable monomer component or the radiation polymerizable oligomer component in the radiation curable adhesive can be selected within a range that appropriately reduces the adhesiveness of the adhesive layer 2.

系化合物、樟腦醌、鹵代酮、醯基膦氧化物、及醯基膦酸鹽等。The above-mentioned radiation hardening adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol-based compounds, acetophenone-based compounds, benzoin ether-based compounds, ketal-based compounds, aromatic sulfonyl chloride-based compounds, photoactive oxime-based compounds, and benzophenone. Ketone compounds, 9-oxysulfur 𠮿

Series compounds, camphorquinone, halogenated ketones, phosphine oxides, and phosphonates, etc.

In addition to the above-mentioned components, the adhesive layer 2 may contain a crosslinking accelerator, an adhesion imparting agent, an anti-aging agent, a coloring agent such as a pigment or a dye, and the like.

The thickness of the adhesive layer 2 is preferably 1 μm or more and 50 μm or less, more preferably 2 μm or more and 30 μm or less, and still more preferably 5 μm or more and 25 μm or less.

[Cut Crystal Mucosal Film] Next, the dicing die sticking film 20 will be described with reference to FIG. 2. Furthermore, in the description of the chip dicing film 20, the parts that overlap with the chip dicing tape 10 will not be repeated.

As shown in FIG. 2, the dicing die film 20 of the present embodiment includes a die dicing tape 10 formed by laminating an adhesive layer 2 on a substrate 1, and an adhesive layered on the adhesive layer 2 of the die dicing tape 10.晶层3。 Crystal layer 3. The base material 1 includes: a first resin layer 1a containing a first resin having a molecular weight dispersion of 5 or less; a second resin layer 1b laminated on one surface of the first resin layer 1a; and a third resin layer 1c, which Laminated on the second resin layer 1b on the side opposite to the first resin layer 1a, and the tensile storage modulus of the second resin layer 1b at room temperature (23°C) is lower than that of the first resin layer 1a and the third resin layer 1c . In addition, the second resin layer 1b contains the second resin, and the third resin layer 1c contains the first resin. In the die bonding film 20, a semiconductor wafer is attached to the die bonding layer 3. In the cutting of the semiconductor wafer using the dicing die bonding film 20, the die bonding layer 3 is also cut together with the semiconductor wafer. The die-bonding layer 3 is cut into a size equivalent to the size of a plurality of singulated semiconductor chips. In this way, a semiconductor chip with a bonding layer 3 can be obtained.

In the dicing die attach film 20 of this embodiment, as with the dicing tape 10, the melting point of the first resin is preferably 115°C or higher and 130°C or lower, and the first resin preferably has a mass average molecular weight of 100,000 or greater and 1,000,000 or less, and a number average molecular weight of 20,000 or more and 600,000 or less, the first resin preferably contains polypropylene resin as a polymerization product obtained by using a metallocene catalyst. In addition, the dicing die bonding film 20 is the same as the dicing tape 10, preferably the substrate 1 has a thickness of 60 μm or more and 160 μm or less, and the thickness of the first resin layer 1a is relative to the thickness of the second resin layer 1b. The ratio is in the range of 1/4 to 1/20, and the ratio of the thickness of the third resin layer 1c to the thickness of the second resin layer 1b is in the range of 1/4 to 1/20. Also, the dicing die sticking film 20 is the same as the dicing tape 10, it is preferable that the second resin layer 1b contains an α-olefin-based thermoplastic elastomer, and the α-olefin-based thermoplastic elastomer is preferably a homopolymer containing α-olefin. At least one of a copolymer of a substance or an α-olefin.

The die-bonding layer 3 preferably has thermosetting properties. By making the die-bonding layer 3 contain at least one of a thermosetting resin and a thermoplastic resin having a thermosetting functional group, the die-bonding layer 3 can be given thermosetting properties.

When the die-bonding layer 3 contains a thermosetting resin, examples of such thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, And thermosetting polyimide resin, etc. Among them, epoxy resin is preferably used.

As epoxy resins, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, and tetrafluoroethylene Type, phenolic novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type, hydantoin type, triglycidyl isocyanurate type, and glycidylamine type之epoxy.

Regarding the phenol resin as the hardener of the epoxy resin, for example, novolak-type phenol resin, resol-type phenol resin, and polyoxystyrene such as poly(p-hydroxystyrene) can be cited.

When the die-bonding layer 3 contains a thermoplastic resin having a thermosetting functional group, examples of such a thermoplastic resin include an acrylic resin containing a thermosetting functional group. As an acrylic resin in the acrylic resin containing a thermosetting functional group, the thing containing the monomer unit derived from (meth)acrylate is mentioned. Among thermosetting resins with thermosetting functional groups, the curing agent can be selected depending on the type of thermosetting functional group.

From the viewpoint of allowing the curing reaction of the resin component to proceed sufficiently or increasing the curing reaction speed, the die-bonding layer 3 may contain a thermosetting catalyst. Examples of the thermosetting catalyst include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihaloborane-based compounds.

The die-bonding layer 3 may contain a thermoplastic resin in addition to the above-mentioned thermosetting resin. The thermoplastic resin system functions as a binder. Examples of thermoplastic resins include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, and polybutylene rubber. Diene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as polyamide 6 or polyamide 6,6, phenoxy resin, acrylic resin, saturated polyester resin such as PET or PBT, Polyamide imide resin, fluororesin, etc. Only one type of the above-mentioned thermoplastic resin may be used, or two or more types may be used in combination. As the above-mentioned thermoplastic resin, an acrylic resin is preferable from the viewpoint that it is easy to ensure the connection reliability based on the die-bonding layer due to its low ionic impurities and high heat resistance.

The above-mentioned acrylic resin is preferably a polymer containing monomer units derived from (meth)acrylate as the most monomer unit in terms of mass ratio. Examples of (meth)acrylates include alkyl (meth)acrylates, cycloalkyl (meth)acrylates, and aryl (meth)acrylates. The above-mentioned acrylic resin may also contain monomer units derived from other components copolymerizable with (meth)acrylate. Examples of the above-mentioned other components include: carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, acrylonitrile, etc. Functional group-containing monomers, or various polyfunctional monomers, etc. From the viewpoint of achieving high cohesion in the sticky layer, the above-mentioned acrylic resin is preferably a (meth)acrylate (especially an alkyl (meth)acrylate with an alkyl group of 4 or less carbon atoms) and a carboxyl group. Copolymers of monomers, nitrogen-containing monomers, and polyfunctional monomers (especially polyglycidyl-based polyfunctional monomers), more preferably ethyl acrylate, butyl acrylate, acrylic acid, acrylonitrile, and poly Copolymer of glycidyl (meth)acrylate.

The die-bonding layer 3 may also contain one or more than two other components as needed. Examples of other components include flame retardants, silane coupling agents, and ion scavengers.

The thickness of the die-bonding layer 3 is preferably 40 μm or more, more preferably 60 μm or more, and still more preferably 80 μm or more. In addition, the thickness of the die bond layer 3 is preferably 200 μm or less, more preferably 160 μm or less, and still more preferably 120 μm or less.

The diced die bonding film 20 of this embodiment is used, for example, as an auxiliary tool for manufacturing semiconductor integrated circuits. Hereinafter, a specific example of using the diced die sticking film 20 will be described. Hereinafter, an example of using the dicing die attach film 20 with the substrate 1 as one layer will be described.

The method of manufacturing a semiconductor integrated circuit has the following steps: a half-cutting step, which forms grooves on the semiconductor wafer by cutting the semiconductor wafer into a die, and then grinds the semiconductor wafer. The thickness is reduced; the back grinding step is to grind the semiconductor wafer after the half-cutting step to make the thickness thin; the mounting step is to grind one side of the semiconductor wafer after the back grinding step (for example, the side opposite to the circuit surface) ) Attaching to the die bonding layer 3 to fix the semiconductor wafer to the dicing tape 10; the expanding step, which expands the distance between the semi-cut semiconductor wafers; and the incision maintaining step, which maintains the distance between the semiconductor wafers; The pick-up step is to peel off between the die bonding layer 3 and the adhesive layer 2 to take out the semiconductor chip (Die) in the state where the die bonding layer 3 is attached; and the die bonding step, which causes the die bonding layer 3 to be attached. The semiconductor chip (Die) in its state is then attached to the body. When performing these steps, the dicing tape (chip dicing film) of this embodiment is used as a manufacturing auxiliary tool.

In the half-cutting step, as shown in FIGS. 3A and 3B, a half-cutting process for cutting the semiconductor integrated circuit into small pieces (Die) is performed. Specifically, the wafer processing tape T is attached to the surface of the semiconductor wafer W on the opposite side to the circuit surface (see FIG. 3A). In addition, the dicing ring R is attached to the wafer processing tape T (see FIG. 3A). In the state where the tape T for wafer processing is attached, grooves for dividing are formed (refer to FIG. 3B). In the back grinding step, as shown in FIGS. 3C and 3D, the semiconductor wafer is ground to make the thickness thinner. Specifically, the back polishing tape G is attached to the surface where the grooves are formed, and on the other hand, the wafer processing tape T attached first is peeled off (see FIG. 3C). In the state where the back polishing tape G is attached, the grinding process is performed until the semiconductor wafer W becomes a predetermined thickness (see FIG. 3D).

In the mounting step, as shown in FIGS. 4A to 4B, after the dicing ring R is mounted on the adhesive layer 2 of the dicing tape 10, a semi-cut semiconductor is attached to the exposed surface of the die bonding layer 3 Wafer W (refer to FIG. 4A). After that, the back polishing tape G is peeled off from the semiconductor wafer W (see FIG. 4B).

In the expanding step, as shown in FIGS. 5A to 5C, the crystal cutting ring R is fixed to the holder H of the expanding device. The dicing die sticking film 20 is lifted up from the lower side using the lifting member U included in the expanding device, and the dicing die sticking film 20 is stretched in a plane direction (refer to FIG. 5B). Thereby, the semi-cut semiconductor wafer W is cut under a specific temperature condition. The above-mentioned temperature conditions are, for example, -20 to 5°C, preferably -15 to 0°C, and more preferably -10 to -5°C. The expanded state is released by lowering the lifting member U (refer to FIG. 5C). Furthermore, in the expanding step, as shown in FIGS. 6A to 6B, the dicing tape 10 is stretched under higher temperature conditions (for example, room temperature (23° C.)) to expand the area. Thereby, the cut adjacent semiconductor wafers W are pulled apart in the plane direction of the film surface, and the gap is further enlarged.

In the incision maintenance step, as shown in FIG. 7, hot air (for example, 100~130°C) is aligned with the dicing tape 10 to thermally shrink the dicing tape 10, and then cool and solidify to maintain the cut adjacent semiconductor The distance between wafers W (notches). Here, in the diced die bond film 20 of the present embodiment, the substrate 1 includes: a first resin layer 1a containing a first resin having a molecular weight dispersion of 5 or less; and a second resin layer 1b laminated on the first resin layer 1a 1 side of the resin layer 1a; the third resin layer 1c, which is laminated on the second resin layer 1b on the side opposite to the first resin layer 1a, and the second resin layer 1b is stretched and stored at room temperature (23°C) Since the modulus is lower than that of the first resin layer 1a and the third resin layer 1c, the cut can be maintained more sufficiently in the cut maintenance step.

In the pick-up step, as shown in FIG. 8, the semiconductor wafer W in the state where the die-bonding layer 3 is attached is peeled from the adhesive layer 2 of the dicing tape 10. Specifically, the ejector pin member P is raised, and the semiconductor wafer W to be picked up is pushed up via the dicing tape 10. The lifted semiconductor chip is held by the suction jig J.

In the die bonding step, the semiconductor wafer W in the state where the die bonding layer 3 is attached is attached to the bonded body. Furthermore, in the manufacture of the above-mentioned semiconductor integrated circuit, the example of using the dicing die attach film 20 as an auxiliary tool has been described, but even when the dicing tape 10 is used as an auxiliary tool, it can be the same as described above. Ground manufacturing of semiconductor integrated circuits.

The matters disclosed in this manual include the following.

(1) A dicing tape, which is formed by laminating an adhesive layer on a substrate, The base material includes: a first resin layer including a first resin having a molecular weight dispersion of 5 or less; a second resin layer laminated on one surface of the first resin layer; and a third resin layer Laminated on the second resin layer on the opposite side of the first resin layer, The tensile storage modulus of the second resin layer at room temperature is lower than that of the first resin layer and the third resin layer.

According to the above configuration, the substrate includes the first resin layer containing the first resin having a molecular weight dispersion of 5 or less. Therefore, in the incision maintaining step, the substrate can be cooled and solidified more quickly. In addition, the second resin layer is laminated on one surface of the first resin layer and the third resin layer is laminated on the side opposite to the first resin layer, that is, the second resin layer sandwiched between the first resin layer and the third resin layer. The tensile storage modulus of the second resin layer at room temperature is lower than the tensile storage modulus of the first resin layer and the third resin layer at room temperature, so the second resin layer can be used as a mild stretch The stress relaxation layer of stress functions. That is, the tensile stress generated by the substrate can be relatively reduced, so that the substrate can have moderate hardness and be relatively easy to elongate. Thereby, in the incision maintaining step, the incision can be maintained more fully. Furthermore, by making the tensile storage modulus of the second resin layer at room temperature smaller than the tensile storage modulus of the first resin layer and the third resin layer at room temperature, the direction from the semiconductor wafer can be increased. In addition to the cutting properties of a plurality of semiconductor wafers, the above-mentioned base material can be prevented from cracking and breaking during the expansion step. In addition, when the affinity between the first resin contained in the first resin layer and the second resin contained in the second resin layer is high, the first resin layer and the second resin layer may be different from each other. Extrusion is relatively good when peeling off.

(2) As the dicing tape described in (1) above, where The tensile storage modulus of the first resin layer and the third resin layer at room temperature is 10 MPa or more and 100 MPa or less, and the tensile storage modulus of the second resin layer at room temperature is 200 MPa or more and Below 500 MPa.

According to the above-mentioned configuration, the above-mentioned base material can further have an appropriate hardness and can be easily stretched. Thereby, in the incision maintaining step, the incision can be further maintained. In addition, the cutting performance from the semiconductor wafer to the plurality of semiconductor wafers can be further improved, and in addition, the substrate can be further suppressed from cracking and breakage during the expansion step.

(3) As described in (1) or (2) above, where The above-mentioned first resin has a melting point of 115°C or more and 130°C or less.

According to the above configuration, the first resin has a melting point of 115°C or more and 130°C or less. Therefore, in the incision maintaining step, the hot air (for example, 100 to 130°C) of the dicing belt can be aligned with the first resin layer to form the first resin layer. The temperature difference of the resin becomes relatively small. Therefore, in the incision maintaining step, the above-mentioned base material can be cooled and solidified more quickly. Thereby, in the incision maintaining step, the incision can be maintained more fully.

(4) The dicing tape as described in any one of (1) to (3) above, wherein The difference in melting point between the first resin and the second resin is 0°C or more and 70°C or less. (5) The dicing tape as described in any one of (1) to (4) above, wherein The difference in melting point between the first resin and the second resin is 0°C or more and 55°C or less.

According to the above configuration, the difference in melting point between the first resin and the second resin can be relatively small. Therefore, when the base material is obtained by co-extrusion molding, excessive heat application to the low melting point resin can be suppressed, thereby enabling Suppresses the generation of by-products due to thermal degradation of low melting point resins. In addition, it is also possible to suppress the occurrence of build-up defects between the first resin layer and the second resin layer due to an excessive decrease in the viscosity of the low-melting resin. Furthermore, when the said 3rd resin layer contains the said 1st resin, it can suppress that a buildup defect occurs between the said 3rd resin layer and the said 2nd resin layer.

(6) The dicing tape as described in any one of (1) to (5) above, wherein The mass average molecular weight of the first resin is 100,000 or more and 1,000,000 or less, and the number average molecular weight is 20,000 or more and 600,000 or less. (7) The dicing tape as described in any one of (1) to (6) above, wherein The above-mentioned first resin includes polypropylene resin as a polymerization product obtained by using a metallocene catalyst. (8) As the dicing tape described in (7) above, where Among the above-mentioned first resins, polypropylene resin as a polymerization product obtained by using a metallocene catalyst includes a propylene/α-olefin copolymer as a polymerization product obtained by using a metallocene catalyst. (9) As described in (8) above, where Among the above-mentioned first resins, the propylene/α-olefin copolymer as a polymerization product obtained by using a metallocene catalyst includes a propylene/α-olefin random copolymer as a polymerization product obtained by using a metallocene catalyst. (10) As described in (9) above, where In the above-mentioned first resin, the propylene/α-olefin random copolymer, which is a polymerization product obtained by using a metallocene catalyst, contains a propylene/α-olefin having a carbon number of 2 which is a polymerization product obtained by using a metallocene catalyst. Olefin random copolymer, propylene/carbon number 4 α-olefin random copolymer as a polymerization product obtained by using a metallocene catalyst, and propylene/carbon number 5 α as a polymerization product obtained by using a metallocene catalyst -Among olefin random copolymers. (11) As the dicing tape described in (10) above, where Among the above-mentioned first resins, the propylene/α-olefin random copolymer as a polymerization product obtained by using a metallocene catalyst includes a propylene/ethylene random copolymer as a polymerization product obtained by using a metallocene catalyst.

According to the above configuration, in the incision maintaining step, the incision can be maintained more sufficiently.

(12) As described in any one of (1) to (11) above, where The thickness of the above-mentioned substrate is 60 μm or more and 160 μm or less, The ratio of the thickness of the first resin layer to the thickness of the second resin layer is in the range of 1/4 to 1/20, The ratio of the thickness of the third resin layer to the thickness of the second resin layer is in the range of 1/4 to 1/20. (13) The dicing tape as described in any one of (1) to (12) above, wherein The second resin layer includes an α-olefin-based thermoplastic elastomer. (14) As the dicing tape described in (13) above, where The above-mentioned α-olefin-based thermoplastic elastomer contains at least one of a homopolymer of α-olefin or a copolymer of α-olefin. (15) As described in (14) above, where The above-mentioned α-olefin homopolymer is a homopolymer of α-olefin having a carbon number of 2 or more and 12 or less. (16) As mentioned in (15) above, where The aforementioned α-olefin homopolymer is selected from ethylene, propylene, 1-butene, and 4-methyl-1-pentene. (17) As described in (14) above, where The above-mentioned α-olefin copolymer is selected from the group consisting of ethylene/propylene copolymer, ethylene/1-butene copolymer, ethylene/propylene/1-butene copolymer, ethylene/α-olefin copolymer with carbon number 5 or more and 12 or less Propylene/ethylene copolymer, propylene/1-butene copolymer, and propylene/α-olefin copolymer with 5 or more and 12 or less carbon atoms.

According to the above configuration, in the incision maintaining step, the incision can be maintained more sufficiently. In addition, during the expansion in the cutting step, the cutting performance from the semiconductor wafer to a plurality of semiconductor wafers can be further improved.

(18) The dicing tape as described in any one of (1) to (17) above, wherein The said 3rd resin layer contains the said 1st resin.

According to the above configuration, the dicing tape can be manufactured efficiently, and the semiconductor wafer attached to the dicing tape can be cut efficiently.

(19) A diced chip adhesive film, which has: The dicing tape as described in any one of (1) to (18) above, and The adhesive layer laminated on the adhesive layer of the above-mentioned dicing tape.

According to the above configuration, in the incision maintaining step, the incision can be maintained more sufficiently.

Furthermore, the dicing tape and the dicing die bonding film of the present invention are not limited to the above-mentioned embodiments. In addition, the dicing tape and the dicing die sticking film of the present invention are not limited by the above-mentioned effects. The chip dicing tape and chip adhesive film of the present invention can be variously modified without departing from the scope of the present invention. [Example]

Next, the present invention will be described in more detail with reference to examples. The following examples are used to further illustrate the present inventors in detail, and do not limit the scope of the present invention.

[Example 1] ＜Forming of base material＞ Using two three-layer extrusion T-die forming machines, the three-layer structure with layer A/layer B/layer C (with layer B as the central layer and two area layers of layer B as the outer layer A layer and C layer Three-layer structure) forming the base material. The resin of the A layer and the C layer uses metallocene PP (trade name: WINTEC WXK1233, manufactured by Japan Polypropylene Corporation), and the resin of the layer B uses EVA (trade name: Evaflex EV250, manufactured by Mitsui DuPont Chemical Co., Ltd.). The above-mentioned extrusion molding was performed at a die nozzle temperature of 190°C. That is, the A layer, the B layer, and the C layer were extrusion molded at 190°C. The thickness of the substrate obtained by extrusion molding is 100 μm. Furthermore, the ratio of the thickness of the A layer, the B layer, and the C layer (layer thickness ratio) is A layer: B layer: C layer=1:10:1. After the formed substrate is sufficiently cured, the cured substrate is wound into a roll to form a roll. Furthermore, the co-extrusion moldability of the base material is good. ＜Production of crystal cut ribbon＞ Use an applicator to apply the adhesive composition on one surface of the substrate from the rolled substrate so that the thickness becomes 10 μm. The substrate coated with the adhesive composition is heated and dried at 110° C. for 3 minutes to form an adhesive layer, thereby obtaining a dicing tape. The above-mentioned adhesive composition is prepared in the following manner. First, 173 parts by mass of INA (isononyl acrylate), 54.5 parts by mass of HEA (hydroxyethyl acrylate), 0.46 parts by mass of AIBN (2,2'-azobisisobutyronitrile), and 372 parts by mass of ethyl acetate were added. They are mixed to obtain a first resin composition. Then, the above-mentioned first resin composition was added to the above-mentioned round-bottom separable flask (volume 1 L), a thermometer, a nitrogen introduction tube, and a stirring blade equipped with a polymerization experimental apparatus for polymerization, and the above was stirred while stirring. For the first resin composition, while the liquid temperature of the first resin composition was set to normal temperature (23°C), the inside of the round-bottom separable flask was replaced with nitrogen for 6 hours. Next, with nitrogen gas flowing into the round bottom separable flask, while stirring the first resin composition, the liquid temperature of the first resin composition was kept at 62°C for 3 hours, and then The temperature was maintained at 75°C for 2 hours to polymerize the INA, the HEA, and the AIBN to obtain a second resin composition. After that, the flow of nitrogen gas into the round bottom separable flask was stopped. The second resin composition is cooled until the liquid temperature becomes room temperature, and then 2-isocyanatoethyl methacrylate as a compound having a polymerizable carbon-carbon double bond is added to the second resin composition (Showa Denko Company product, brand name "KarenzMOI (registered trademark)") 52.5 parts by mass and dibutyltin dilaurate IV (manufactured by Wako Pure Chemical Industries, Ltd.) 0.26 parts by mass to obtain a third resin composition, and the obtained third resin composition It was stirred at a liquid temperature of 50°C for 24 hours in an atmospheric atmosphere. Then, 0.75 parts by mass of CORONATEL (isocyanate compound) and 2 parts by mass of Omnirad 127 (photopolymerization initiator) were added to the third resin composition with respect to 100 parts by mass of the polymer solid content, and ethyl acetate was used. Ester dilutes the said 3rd resin composition so that the solid content concentration may become 20 mass %, and the adhesive composition was prepared. ＜Production of slicing and sticking film＞ Acrylic resin (manufactured by Nagase Chemical Company, brand name "SG-P3", glass transition temperature 12°C) 100 parts by mass, epoxy resin (manufactured by Mitsubishi Chemical Company, brand name "JER1001") 46 parts by mass, phenol resin ( Produced by Meiwa Chemical Co., Ltd., brand name "MEH-7851ss") 51 parts by mass, spherical silica (manufactured by Admatechs Co., brand name "SO-25R") 191 parts by mass, and hardening catalyst (manufactured by Shikoku Kasei Kogyo Co., Ltd., Brand name "CUREZOLPHZ") 0.6 parts by mass was added to methyl ethyl ketone and mixed to obtain a crystal bonding composition with a solid content concentration of 20% by mass. Then, using an applicator, apply the above-mentioned die-bonding composition to the silicone-treated surface of the PET separator (thickness 50 μm) as a release liner so that the thickness becomes 10 μm, at 130°C Dry for 2 minutes to remove the solvent from the above-mentioned die-bonding composition to obtain a die-bonded wafer formed by laminating a die-bonding layer on the release liner. Then, the side of the bonding wafer where the release sheet is not laminated is attached to the adhesive layer of the dicing tape, and then the release liner is peeled from the bonding layer to obtain a dicing chip with a bonding layer Mucous film.

For the dicing die bond film obtained in this way, the cutability of the wafer and die bond layer (hereinafter referred to as the cutoff property), the uplift of the die bond layer from the dicing tape (hereinafter referred to as the die bond layer) was evaluated in the following manner Uplift), and the maintenance of the incision.

(Evaluation of severance) A bare wafer (300 mm in diameter) and a dicing ring were attached to the chip dicing adhesive film of Example 1. Then, the bare wafer and the die bonding layer were cut using a wafer separation device DDS230 (manufactured by DISCO) to evaluate the cutting performance. The bare wafer is cut into a bare chip with a length of 3.2 mm × a width of 1.4 mm × a thickness of 0.025 mm.

The cutting property was evaluated in detail in the following manner. First, use the cold expansion unit to cut the bare wafer and the die bond layer under the conditions of an expansion temperature of -5°C, an expansion speed of 100 mm/sec, and an expansion amount of 14 mm to obtain a semiconductor wafer with a die bond layer. Then, expand at room temperature, expand at 1 mm/sec, and expand at 10 mm at room temperature. Then, while maintaining the expanded state, the diced mucosal film at the interface with the outer periphery of the bare wafer is heat-shrinked under the conditions of a heating temperature of 200°C, a heating distance of 18 mm, and a rotation speed of 5°/sec. Then, the cut portion of the semiconductor wafer with the die-bonding layer was observed by microscope observation, and the cut rate was calculated. After that, the case where the cutting rate was 90% or more was evaluated as 0, and the case where the cutting rate was less than 90% was evaluated as ×.

(Evaluation of the uplift of the sticky crystal layer) A bare wafer (300 mm in diameter) and a dicing ring were attached to the chip dicing adhesive film of Example 1. Then, the bare wafer and the die bonding layer were cut using a wafer separation device DDS230 (manufactured by DISCO), and the swelling of the die bonding layer after the cut was evaluated. The bare wafer is cut into a bare chip with a length of 12 mm × a width of 4 mm × a thickness of 0.055 mm. Furthermore, as a bare wafer, a warped wafer was used.

The warped wafer is produced in the following manner. First, the following (a) to (f) are dissolved in methyl ethyl ketone to obtain a warpage adjusting composition with a solid content of 20% by mass. (a) Acrylic resin (manufactured by Nagase Chemical Co., Ltd., trade name "SG-70L"): 5 parts by mass (b) Epoxy resin (manufactured by Mitsubishi Chemical Corporation, trade name "JER828"): 5 parts by mass (c) Phenolic resin (manufactured by Meiwa Chemical Co., Ltd., trade name "LDR8210"): 14 parts by mass (d) Epoxy resin (manufactured by Mitsubishi Chemical Corporation, trade name "MEH-8005"): 2 parts by mass (e) Spherical silicon dioxide (manufactured by Admatechs, trade name "SO-25R"): 53 parts by mass (f) Phosphorus catalyst (TPP-K): 1 part by mass Then, using an applicator, apply the warpage adjustment composition to a thickness of 25 μm on the silicone-treated surface of a PET separator (50 μm in thickness) as a release liner, and dry at 130°C for 2 minutes The solvent is removed from the warpage adjustment composition to obtain a warpage adjustment sheet in which a warpage adjustment layer is laminated on the release liner. Then, using a laminator (manufactured by MCK, model MRK-600) at 60°C, 0.1 MPa, and 10 mm/s, the bare wafer was attached to the unlaminated release liner of the warpage adjustment sheet. One side is placed in an oven and heated at 175°C for 1 hour to thermally harden the resin in the warpage adjustment layer, whereby the warpage adjustment layer shrinks to obtain a warped bare wafer. After shrinking the warpage adjustment layer, a wafer processing tape (manufactured by Nitto Denko Co., Ltd., trade name "V-12SR2") is attached to one side of the warped bare wafer where the warpage adjustment layer is not laminated. ) Afterwards, the dicing ring is fixed on the warped bare wafer via the above-mentioned wafer processing tape. Thereafter, the warpage adjustment layer is removed from the warped bare wafer. Using a dicing device (manufactured by DISCO, model 6361), the entire surface of the warped bare wafer from which the warpage adjustment layer has been removed (hereinafter referred to as one side) is formed in a grid pattern (width 20 μm) with a distance from the surface. Grooves with a depth of 100 μm. Then, a back polishing tape is attached to one surface of the warped bare wafer, and the wafer processing tape is removed from the other side of the warped bare wafer (the side opposite to the above-mentioned one). Then, using a backside grinder (manufactured by DISCO, model DGP8760), the warped bare wafer was ground from the other side so that the thickness of the warped bare wafer became 55 μm (0.055 mm), and the obtained The wafer serves as a warped wafer.

The uplift of the sticky crystal layer was evaluated in detail in the following manner. For the slicing die sticking film of Example 1, the area of the part of the die sticking layer raised from the dicing band was observed with a microscope (the ratio of the area of the uplifting die sticking layer when the total area of the die sticking layer is set to 100%), Calculate the uplift area of the sticky crystal layer. Then, the case where the area of the uplift of the sticky crystal layer is less than 30% is evaluated as ○, and the case where it is 30% or more is evaluated as ×.

(Evaluation of incision maintenance) A bare wafer (300 mm in diameter) and a dicing ring were attached to the chip dicing adhesive film of Example 1. Then, the bare wafer and the die bonding layer were cut using a wafer separation device DDS230 (manufactured by DISCO), and the kerf maintenance after cutting was evaluated. The bare wafer is cut into a bare chip with a length of 12 mm × a width of 4 mm × a thickness of 0.055 mm. Furthermore, as a bare wafer, a warped wafer is used. The warped wafer is made in the same way as described above.

The incision maintainability was evaluated in detail in the following manner. First, the cold expansion unit is used to cut the semiconductor wafer and the die bond layer under the conditions of an expansion temperature of -5°C, an expansion speed of 100 mm/sec, and an expansion amount of 12 mm, to obtain a plurality of semiconductors with a die bond layer Wafer. After cutting, the interval between a plurality of warped wafers with a die bond layer (hereinafter referred to as the wafer interval after cutting) was measured by microscope observation. The interval between a plurality of warped wafers with die-bonding layers is obtained by measuring the interval at any 10 locations and performing arithmetic average. Then, expand at room temperature under the conditions of room temperature, expansion speed of 1 mm/sec, and expansion amount of 5 mm. Then, while maintaining the expanded state, under the conditions of a heating temperature of 200°C, a heating distance of 18 mm, and a rotation speed of 5°/sec, the diced mucosal film at the interface with the outer periphery of the semiconductor wafer is heat-shrinked. After the heat shrinkage, the interval between a plurality of semiconductor wafers with a die-bonding layer (hereinafter referred to as the chip interval after heat shrinkage) is measured by microscope observation. The interval between a plurality of semiconductor wafers with a die-bonding layer is obtained by measuring the interval at any 10 locations and performing arithmetic average. Then, the reduction ratio of the wafer gap after thermal shrinkage to the wafer gap after cutting was calculated. Then, the case where the reduction rate is less than 10% is evaluated as 0, and the case where the reduction rate is 10% or more is evaluated as ×.

(Determination of melting point) The melting point of WINTEC WXK1233, which is the resin of layer A and C, and Evaflex EV250, which is the resin of layer B, was measured. The measured melting points are shown in Table 1 below. The melting point is measured under the following conditions. That is, it is measured by the following method: using a differential scanning calorimeter device (model DSC Q2000 manufactured by TA INSTRUMENTS), the temperature is raised to 200°C at a heating rate of 5°C/min under a nitrogen stream to obtain the peak temperature of the endothermic peak.

(Determination of number average molecular weight, mass average molecular weight, and molecular weight dispersion) Measure the number average molecular weight and mass average molecular weight of WINTEC WXK1233 as the resin of layer A and layer C under the following conditions. In addition, the molecular weight dispersion (mass average molecular weight/number average molecular weight) of WINTEC WXK1233 was calculated based on the number average molecular weight and the mass average molecular weight measured under the following conditions. • Measuring device: Model "Alliance GPC 2000" manufactured by Waster •Tube string: Two TSkgel GMH6-HT (manufactured by Mitsui DuPont Poly Chemicals) are connected in series, and two TSKgel GMH-HTLs are connected in series on the downstream side. • Column size: TSKgel GMH6-HT and TSKgel GMH-HTL both have an inner diameter of 7.5 mm × a length of 300 mm • Column temperature: 140℃ • Flow rate: 1.0 mL/min • Eluent: o-dichlorobenzene •Sample preparation concentration: 0.10% by mass (dissolved in o-dichlorobenzene) •Sample injection volume: 40 μL •Detector: RI (differential refractometer) • Standard sample: polystyrene

[Example 2] Except for setting the base material to be 80 μm, the same procedure as in Example 1 was carried out to obtain the slicing die attach film of Example 2. Furthermore, the co-extrusion moldability of the base material is good. In addition, with respect to the dicing die attach film of Example 2, the cutting property, the swelling of the die attach layer and the maintenance of the notch were evaluated in the same manner as in Example 1.

[Example 3] Except for setting the base material to be 150 μm, the same procedure as in Example 1 was carried out to obtain the diced die attach film of Example 2. Furthermore, the co-extrusion moldability of the base material is good. In addition, in the same manner as in Example 1, the cut-off property, the swelling of the die-bonding layer and the maintainability of the notch were evaluated for the die-cut die-cut film of Example 3.

[Example 4] Except that the resin constituting the B layer (center layer) of the substrate was Evaflex EV550 (manufactured by Mitsui DuPont Chemical Co., Ltd.) and the substrate was 80 μm, the same procedure as in Example 1 was carried out to obtain Example 3 The cut crystal sticky crystal film. Furthermore, the co-extrusion moldability of the base material is good. In addition, with respect to the diced die attach film of Example 4, the cutting property, the uplift of the die attach layer and the maintainability of the cut were evaluated in the same manner as in Example 1. Furthermore, for Evaflex EV550, the melting point was measured in the same manner as in Example 1. The measured melting points are shown in Table 1 below.

[Example 5] Except having used the resin of the B layer as a propylene elastomer (trade name: Vistamaxx3980, manufactured by ExxonMobil Chemical Co., Ltd.), the same procedure as in Example 1 was carried out to obtain a diced wafer of Example 5. Furthermore, the co-extrusion moldability of the base material is good. In addition, in the same manner as in Example 1, the cut-off property, the swelling of the die-bonding layer and the maintainability of the notch were evaluated for the die-cut die-bonding film of Example 5. Furthermore, for Vistamaxx3980, the melting point was measured in the same manner as in Example 1. The measured melting points are shown in Table 1 below.

[Example 6] The thickness of the substrate was set to 80 μm, and the layer thickness ratio of the substrate was set to A layer: B layer: C layer = 1:4:1, except that the same procedure as in Example 1 was carried out to obtain Example 6 The cut crystal sticky crystal film. Furthermore, the co-extrusion moldability of the base material is good. In addition, with regard to the dicing die attach film of Example 6, the cutting property, the swelling of the die attach layer and the maintenance of the notch were evaluated in the same manner as in Example 1.

[Example 7] The thickness of the substrate was set to 80 μm, and the layer thickness ratio of the substrate was set to A layer: B layer: C layer = 1:20:1, except that the same procedure as in Example 1 was carried out to obtain Example 7 The cut crystal sticky crystal film. Furthermore, the co-extrusion moldability of the base material is good. In addition, with respect to the diced die attach film of Example 7, the cutting property, the swelling of the die attach layer and the maintainability of the notch were evaluated in the same manner as in Example 1.

[Example 8] Except that the metallocene PP constituting the A layer and the C layer (outer layer) of the base material was set to WINTEC WMX03 (manufactured by Nippon Polypropylene Co., Ltd.), the same procedure as in Example 1 was carried out to obtain the cut and bonded crystal of Example 8 membrane. Furthermore, the co-extrusion moldability of the base material is good. In addition, with respect to the dicing die attach film of Example 8, the cutting property, the swelling of the die attach layer and the maintainability of the notch were evaluated in the same manner as in Example 1.

[Comparative Example 1] Except that the resin constituting the A layer and the C layer (outer layer) of the base material was set to non-metallocene random PP (trade name: NOVATEC PP EG7FT, manufactured by Nippon Polypropylene Co., Ltd.), it was carried out in the same manner as in Example 1. The diced wafer of Comparative Example 1 was obtained. Furthermore, the co-extrusion moldability of the base material is poor. In addition, with respect to the diced die sticking film of Comparative Example 1, the cutting properties, the uplift of the die sticking layer and the maintenance of the notch were evaluated in the same manner as in Example 1. Furthermore, for NOVATEC PP EG7FT, the melting point was measured in the same manner as in Example 1. The measured melting points are shown in Table 1 below.

[Comparative Example 2] The A layer and the C layer (outer layer) constituting the base material were made of non-metallocene low-density polyethylene (trade name: NOVATEC LC LC720, manufactured by Nippon Polypropylene Co., Ltd.), and the same procedure as in Example 1 was carried out, except that , The diced wafer of Comparative Example 2 was obtained. Furthermore, the co-extrusion moldability of the base material is good. In addition, with regard to the dicing die attach film of Comparative Example 2, the cutting property, the swelling of the die attach layer and the maintenance of the notch were evaluated in the same manner as in Example 1. Furthermore, for NOVATEC LC LC720, the melting point was measured in the same manner as in Example 1. The measured melting points are shown in Table 1 below.

[Comparative Example 3] Except that the resin constituting the A layer and the C layer (outer layer) of the substrate was set to Evaflex EV250, the same procedure as in Example 1 was carried out to obtain a diced die attach film of Comparative Example 3. Furthermore, the co-extrusion moldability of the base material is good. In addition, with respect to the dicing die attach film of Comparative Example 3, the cutting property, the swelling of the die attach layer and the maintenance of the notch were evaluated in the same manner as in Example 1.

[Comparative Example 4] Except that the resins constituting the A layer, the B layer and the C layer of the base material were set to Vistamaxx3980, the same procedure as in Example 1 was carried out to obtain a diced die attach film of Comparative Example 4. Furthermore, the co-extrusion moldability of the base material is good. In addition, for the dicing die attach film of Comparative Example 4, the cutting property, the swelling of the die attach layer, and the maintenance of the notch were evaluated in the same manner as in Example 1.

[Comparative Example 5] Except that the resin constituting the layer B of the substrate was WINTEC WXK1233, the same procedure as in Example 1 was carried out to obtain a diced die attach film of Comparative Example 5. Furthermore, the co-extrusion moldability of the base material is good. In addition, with respect to the diced die attach film of Comparative Example 5, the cutting property, the swelling of the die attach layer, and the notch maintainability were evaluated in the same manner as in Example 1.

For the chip adhesive films of each example, the results obtained by evaluating the co-extrudability of the base material, the cutting property, the swelling of the chip adhesive layer, and the maintenance of the cut are shown in Table 1 below.

[Table 1] Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Substrate Layer thickness ratio (layer A: layer B: layer C) 1:10:1 1:10:1 1:10:1 1:10 :1 1:10:1 1: 4: 1 1:20:1 Resin (layer A/layer B/layer C) WXK1233/EV250/WXK1233 WXK1233/EV250/WXK1233 WXK1233/EV250/WXK1233 WXK1233/EV550/WXK1233 WXK1233/Vistamaxx 3980/WXK1233 WXK1233/EV250/ WXK1233 WXK1233/EV250/WXK1233 Thickness [μm] 100 80 150 80 100 80 80 Melting point (B layer resin) 75 75 75 90 78 75 75 Melting point (A layer and C layer resin) 125 125 125 125 125 125 125 Weight average molecular weight (A layer and C layer resin) 363000 363000 363000 363000 363000 363000 363000 Number average molecular weight (A layer and C layer resin) 126000 126000 126000 126000 126000 126000 126000 Molecular weight dispersion (A layer and C layer resin) 3 3 3 3 3 3 3 Adhesive layer Thickness [μm] 10 10 10 10 10 10 10 Sticky layer Thickness [μm] 10 10 10 10 10 10 10 Coextrusion film formation 〇 〇 〇 〇 〇 〇 〇 Severance 〇 〇 〇 〇 〇 〇 〇 Wafer bump 〇 〇 〇 〇 〇 〇 〇 Maintenance of incision 〇 〇 〇 〇 〇 〇 〇 Example 8 Comparative example 1 Comparative example 2 Comparative example 3 Comparative example 4 Comparative example 5 Substrate Layer thickness ratio (layer A: layer B: layer C) 1:10:1 1:10:1 1:10:1 1:10:1 1:10:1 1:10:1 Resin (layer A/layer B/layer C) WMX03/EV250/WMX03 EG7FT/EV250/FG7FT LC720/EV250/LC 720 EV250/EV250/EV250 Vistamaxx3980/Vistamaxx3980/Vistamaxx3980 WXK1233/WXK1233 /WXK1233 Thickness [μm] 100 100 100 100 100 100 Melting point (B layer resin) 75 75 75 75 78 125 Melting point (A layer and C layer resin) 125 149 110 75 78 125 Weight average molecular weight (A layer and C layer resin) 384000 497000 293000 173000 154000 363000 Number average molecular weight (A layer and C layer resin) 134000 9800 33400 33500 53600 126000 Molecular weight dispersion (A layer and C layer resin) 3 7 7 5 3 3 Adhesive layer Thickness [μm] 10 10 10 10 10 10 Sticky layer Thickness [μm] 10 10 10 10 10 10 Coextrusion film formation 〇 X 〇 〇 〇 〇 Severance 〇 〇 〇 〇 〇 X Wafer bump 〇 〇 〇 X X X Maintenance of incision 〇 X X X X X

It can be seen from Table 1 that the substrates of the chip adhesive films of Examples 1 to 8 have good coextrusion formability, excellent cutting properties, can suppress the swelling of the chip adhesive layer, and have good incision maintenance. In contrast, it can be seen that the chip adhesive film of Comparative Example 1 has excellent cutting properties and can suppress the swelling of the chip adhesive layer, but the co-extrudability of the base material is poor, and the slit cannot be maintained sufficiently. It can also be seen that the substrate of the chip adhesive film of Comparative Example 2 has good coextrusion formability and excellent cutting properties, and can suppress the swelling of the chip adhesive layer, but cannot sufficiently maintain the cut. Furthermore, it can be seen that the substrates of the chip adhesive films of Comparative Examples 3 and 4 have good coextrusion moldability and excellent cutting properties, but the swelling of the chip adhesive layer cannot be sufficiently suppressed, and the cut cannot be sufficiently maintained. It can also be seen that the coextrusion moldability of the substrate of the chip adhesive film of Comparative Example 5 is good, but the cutting property is poor, the swelling of the chip adhesive layer cannot be sufficiently suppressed, and the cut cannot be sufficiently maintained. Furthermore, the results disclosed in Table 1 are related to the chip adhesive film, but it is predicted that the dicing tape contained in the chip adhesive film can also obtain the same results as those shown in Table 1. [Cross Reference of Related Applications]

This application claims the priority of Japanese Patent Application No. 2019-110199, and is incorporated into the description of this application specification by reference.

1: Substrate 1a: The first resin layer 1b: The second resin layer 1c: 3rd resin layer 2: Adhesive layer 3: Sticky crystal layer 10: Cut crystal belt 20: slicing crystal stick film G: Back grinding tape H: retainer J: Adsorption fixture P: ejector component R: Slicing ring T: Tape for wafer processing U: Jack up member W: semiconductor wafer

Fig. 1 is a cross-sectional view showing the structure of a dicing tape according to an embodiment of the present invention. Fig. 2 is a cross-sectional view showing the structure of a dicing die bond film according to an embodiment of the present invention. FIG. 3A is a cross-sectional view schematically showing the state of half-cut processing in the method of manufacturing a semiconductor integrated circuit. FIG. 3B is a cross-sectional view schematically showing the state of the half-cutting process in the manufacturing method of the semiconductor integrated circuit. 3C is a cross-sectional view schematically showing the state of back grinding in the method of manufacturing a semiconductor integrated circuit. FIG. 3D is a cross-sectional view schematically showing the state of the back grinding process in the manufacturing method of the semiconductor integrated circuit. 4A is a cross-sectional view schematically showing the state of the mounting step in the manufacturing method of the semiconductor integrated circuit. 4B is a cross-sectional view schematically showing the state of the mounting step in the manufacturing method of the semiconductor integrated circuit. FIG. 5A is a cross-sectional view schematically showing the state of the expansion step at a low temperature in the manufacturing method of the semiconductor integrated circuit. FIG. 5B is a cross-sectional view schematically showing the state of the expansion step at a low temperature in the manufacturing method of the semiconductor integrated circuit. 5C is a cross-sectional view schematically showing the state of the expansion step at a low temperature in the manufacturing method of the semiconductor integrated circuit. FIG. 6A is a cross-sectional view schematically showing the state of the expansion step at room temperature in the manufacturing method of the semiconductor integrated circuit. 6B is a cross-sectional view schematically showing the state of the expansion step at room temperature in the method of manufacturing a semiconductor integrated circuit. FIG. 7 is a cross-sectional view schematically showing the state of the cut maintaining step in the manufacturing method of the semiconductor integrated circuit. FIG. 8 is a cross-sectional view schematically showing the state of the pickup step in the method of manufacturing the semiconductor integrated circuit.

1: Substrate

1a: The first resin layer

1b: The second resin layer

1c: 3rd resin layer

2: Adhesive layer

10: Slicing and sticking film

Claims (8)

A kind of diced crystal belt, which is It is formed by laminating an adhesive layer on the substrate, and The base material includes: a first resin layer including a first resin having a molecular weight dispersion of 5 or less; a second resin layer laminated on one surface of the first resin layer; and a third resin layer Laminated on the second resin layer on the opposite side of the first resin layer, The tensile storage modulus of the second resin layer at room temperature is lower than that of the first resin layer and the third resin layer. Such as the crystal cutting belt of claim 1, where The above-mentioned first resin has a melting point of 115°C or more and 130°C or less. Such as the dicing tape of claim 1 or 2, where The mass average molecular weight of the first resin is 100,000 or more and 1,000,000 or less, and the number average molecular weight is 20,000 or more and 600,000 or less. Such as the dicing tape of claim 1 or 2, where The above-mentioned first resin includes polypropylene resin as a polymerization product obtained by using a metallocene catalyst. Such as the dicing tape of claim 1 or 2, where The thickness of the above-mentioned substrate is 60 μm or more and 160 μm or less, The ratio of the thickness of the first resin layer to the thickness of the second resin layer is in the range of 1/4 to 1/20, The ratio of the thickness of the third resin layer to the thickness of the second resin layer is in the range of 1/4 to 1/20. Such as the dicing tape of claim 1 or 2, where The second resin layer includes an α-olefin-based thermoplastic elastomer. Such as the crystal cutting belt of claim 6, where The above-mentioned α-olefin-based thermoplastic elastomer contains at least one of a homopolymer of α-olefin or a copolymer of α-olefin. A diced chip adhesive film, which has: Such as the dicing tape of any one of claims 1 to 7, and The adhesive layer laminated on the adhesive layer of the above-mentioned dicing tape.

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