KR20190113748A - Semiconductor Processing Tape - Google Patents

Abstract

Provided is a tape for semiconductor processing that can be sufficiently heat shrinked in a short time and can maintain a cuff width.
The tape 10 for semiconductor processing of this invention has the adhesive film 15 which has the base film 11 and the adhesive layer 12 formed in at least one surface side of the said base film 11, The said adhesive tape 15 ) Is the average value of the differential value of the thermal strain at 1 ° C between 40 ° C and 80 ° C measured at the time of temperature increase by the thermomechanical property tester in the MD direction, and the thermomechanical property tester in the TD direction. It is characterized by the sum of the average value of the differential value of the thermal strain rate for every 1 degreeC between 40 degreeC and 80 degreeC measured at the time of temperature rising being a negative value.

Description

Semiconductor Processing Tape

INDUSTRIAL APPLICABILITY The present invention can be used to fix a wafer in a dicing step of dividing the wafer into chip-like elements, and furthermore, in a die bonding step or a mounting step of bonding a chip and a chip or a chip and a substrate after dicing. The present invention also relates to an expandable semiconductor processing tape that can be used even when used, and can also be used in a step of dividing an adhesive layer along a chip by expanding.

Background Art Conventionally, in a manufacturing process of a semiconductor device such as an integrated circuit (IC), a backgrinding process for grinding the back surface of a wafer in order to thin the wafer after circuit pattern formation, and a tape for semiconductor processing with adhesiveness and elasticity on the back surface of the wafer After attaching, the dicing step of dividing the wafer into chips, the expansion step of expanding (expanding) the tape for semiconductor processing, the pick-up step of picking up the divided chips, and the adhesion of the picked chips to a lead frame or a package substrate A die bonding (mount) process is performed to laminate (or stack and bond chips) in a stacked package.

In the backgrinding process, a surface protection tape is used to protect the circuit pattern formation surface (wafer surface) of the wafer from contamination. When peeling this surface protection tape from the wafer surface after completion | finish of back surface grinding of a wafer, after attaching the tape for semiconductor processing (dicing die bonding tape) demonstrated below to the back surface of a wafer, the tape side for semiconductor processing is attached to an adsorption table. After fixing and performing the process which reduces the adhesive force with respect to a wafer to a surface protection tape, a surface protection tape is peeled off. The wafer from which the surface protection tape has been peeled off is then lifted from the adsorption table in a state where the wafer is bonded to the back surface thereof, and then provided to the next dicing step. In addition, the process which reduces said adhesive force is an energy-beam irradiation process, when a surface protection tape contains energy ray curable components, such as an ultraviolet-ray, and is a heat process, when a surface protection tape contains a thermosetting component.

In the dicing process or the mounting process after the said backgrinding process, the tape for semiconductor processing in which the adhesive layer and the adhesive bond layer were laminated | stacked on this base film in this order is used. In general, in the case of using such a semiconductor processing tape, first, the adhesive layer of the semiconductor processing tape is bonded to the back surface of the wafer to fix the wafer, and the dicing blade is used to dice the wafer and the adhesive layer in units of chips. do. Thereafter, the tape is expanded in the radial direction of the wafer, whereby an expand step of enlarging the distance between the chips is performed. This expansion step is performed in order to improve chip recognition by a CCD camera or the like in a subsequent pick-up step, and to prevent chip breakage caused by contact between adjacent chips when picking up the chip. . Thereafter, the chip is peeled off from the pressure-sensitive adhesive layer together with the adhesive layer in the pick-up step and picked up, and is directly adhered to a lead frame, a package substrate, or the like in the mounting step. Thus, by using the tape for semiconductor processing, it becomes possible to directly adhere | attach the chip | tip with an adhesive bond layer to a lead frame, a package board | substrate, etc., and abbreviate | omits the adhesive application process or the process of adhering a die bonding film to each chip separately. can do.

However, in the dicing step, as described above, since the wafer and the adhesive layer are diced together using the dicing blade, not only the cutting chips of the wafer but also the cutting chips of the adhesive layer are generated. And when the cutting chips of an adhesive bond layer were piled up in the dicing groove of a wafer, there existed a problem that a chip | tip adhere | attached, a pick-up defect etc. generate | occur | produce, and the manufacturing yield of a semiconductor device falls.

In order to solve such a problem, the method of dividing an adhesive bond layer for every chip is proposed by dicing only a wafer by a blade in a dicing process, and expanding a tape for semiconductor processing in an expansion process (example) For example, patent document 1). According to such a method of dividing the adhesive layer using the tension at the time of expansion, the cutting chips of the adhesive are not generated and do not adversely affect the pick-up process.

Moreover, in recent years, the so-called stealth dicing method which can cut a wafer non-contact using a laser processing apparatus as a cutting method of a wafer is proposed. For example, Patent Document 2 uses a stealth dicing method to interpose an adhesive layer (die bond resin layer), focuses the interior of a semiconductor substrate with a sheet, and irradiates a laser beam to thereby illuminate the interior of the semiconductor substrate. A method of cutting a semiconductor substrate, comprising: forming a modified region by multiphoton absorption in the modified region and forming the modified region as a portion to be cut, and expanding the sheet to cut the semiconductor substrate and the adhesive layer along the portion to be cut. Is disclosed.

In addition, as a cutting method of another wafer using a laser processing apparatus, Patent Document 3, for example, includes a step of attaching an adhesive layer (adhesive film) for die bonding on the back surface of a wafer, and a wafer bonded to the adhesive layer. The process of joining a stretchable protective adhesive tape to an adhesive bond layer side, the process of irradiating a laser beam along the street and dividing into individual chips from the surface of the wafer which bonded the protective adhesive tape, and expanding a protective adhesive tape, A method of dividing a wafer including a step of applying a tensile force to the adhesive layer to break the adhesive layer for each chip and a step of removing the chip to which the broken adhesive layer is bonded from the protective adhesive tape are proposed.

According to the cutting methods of the wafers described in these Patent Documents 2 and 3, since the wafer is cut in a non-contact manner by irradiation of a laser beam and expansion of the tape, the physical load on the wafer is small, and the mainstream blade dicing is performed. The wafer can be cut without generating cutting chips (chipping) of the wafer as in the case. Moreover, since an adhesive bond layer is divided | segmented by expansion, it does not generate the cutting chip of an adhesive bond layer. For this reason, it is attracting attention as an excellent technique which can replace blade dicing.

However, as described in Patent Documents 1 to 3 above, in the method of expanding by expanding and dividing the adhesive layer, when a conventional tape for semiconductor processing is used, with an increase in the amount of expansion, There was a problem that the pushed-up portion was elongated, the portion was relaxed after releasing the expansion, and the gap between chips (hereinafter, "cuff width") could not be maintained.

Therefore, after dividing an adhesive bond layer by an expand and releasing an expand, the method of shrinking by heating the relaxed part of the tape for a semiconductor process, and maintaining a cuff width is proposed (for example, patent document 4). , 5).

Japanese Patent Publication No. 2007-5530 Japanese Patent Laid-Open No. 2003-338467 Japanese Patent Laid-Open No. 2004-273895 International Publication No. 2016/152957 Japanese Patent Publication No. 2015-211081

By the way, as a method of shrinking the relaxation of the tape for semiconductor processing caused by the expansion by heating, generally, a pair of hot air nozzles are rolled around the annular portion which is pushed up from the expand ring and where the relaxation occurs. Hot air is blown to the part to heat shrink.

In the tape for semiconductor processing of the said patent document 4, the thermal contraction rate of both the longitudinal direction and the width direction of the tape at the time of heating at 100 degreeC for 10 second is 0% or more and 20% or less. However, when the hot air nozzle is circulated and heated, the temperature in the vicinity of the surface of the semiconductor processing tape gradually rises, so that there is a problem that it takes time to remove the relaxation of all the annular points. In addition, when the cuff width is narrow, it is difficult to determine the boundary line with the adjacent chip, and there is a problem that misrecognition of the chip occurs in image recognition at the time of pick-up, and the yield of the semiconductor component manufacturing process is deteriorated.

Moreover, the shrinkage rate in 130 degreeC-160 degreeC of the tape for semiconductor processing of the said patent document 5 becomes 0.1% or more (refer Claim 1 of the specification of patent document 5), and the temperature which shrinkage generate | occur | produces is high. Therefore, when heat shrinking by warm air, high temperature and long heating time are required, and warm air may affect the adhesive bond layer of the wafer outer periphery, and there exists a possibility that the divided adhesive bond layer may fuse | melt and remelt. In addition, when the cuff width is narrow, it is difficult to determine the boundary line with the adjacent chip, and there is a problem that misrecognition of the chip occurs in image recognition at the time of pick-up, and the yield of the semiconductor component manufacturing process is deteriorated.

Therefore, the present invention can sufficiently maintain the cuff width so that heat shrinkage can be sufficiently performed in a short time, the boundary with adjacent chips can be easily distinguished, and the misunderstanding of the chip in image recognition during pickup can be suppressed. It is an object to provide a tape for semiconductor processing.

In order to solve the above problems, the tape for semiconductor processing which concerns on this invention has an adhesive tape which has a base film and the adhesive layer formed in at least one surface side of the said base film, The said adhesive tape is a thermomechanical system in MD direction. 40 degreeC-80 degreeC measured at the time of temperature rising by the thermomechanical characteristic tester in TD direction, and the average value of the differential value of the thermal strain in every 1 degreeC between 40 degreeC and 80 degreeC measured at the time of temperature rising by a characteristic tester. It is characterized by the sum of the average values of the derivative values of the thermal strains for every 1 degreeC in between being a negative value.

Moreover, it is preferable that the adhesive agent layer and the peeling film are laminated | stacked in this order on the said adhesive layer side of the said tape for semiconductor processing.

Moreover, it is preferable that the said tape for semiconductor processing is used for the blade dicing of a full cut and a half cut, the laser dicing of a full cut, or the stealth dicing by a laser.

According to the tape for semiconductor processing which concerns on this invention, a cuff width is enough to shrink | contract heat enough in a short time, to make it easy to distinguish a boundary with an adjacent chip, and to suppress the misunderstanding of the chip in image recognition at the time of pick-up. It can keep enough.

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows typically the structure of the tape for a semiconductor processing which concerns on embodiment of this invention.
2 is a cross-sectional view showing a state in which a surface protection tape is bonded to a wafer.
It is sectional drawing for demonstrating the process of bonding a wafer and a ring frame to the tape for semiconductor processing which concerns on embodiment of this invention.
It is sectional drawing explaining the process of peeling a surface protection tape from the surface of a wafer.
5 is a cross-sectional view showing how a modified region is formed on a wafer by laser processing.
FIG. 6A is a cross-sectional view showing a state in which the tape for semiconductor processing according to the embodiment of the present invention is mounted on an expand apparatus. (b) is sectional drawing which shows the process of dividing a wafer into chips by the expansion of the tape for a semiconductor process. (c) is sectional drawing which shows the tape, an adhesive bond layer, and a chip | tip for semiconductor processing after expansion.
7 is a cross-sectional view for explaining a heat shrink process.
It is explanatory drawing which shows the measuring point of the cuff width in evaluation of an Example and a comparative example.
9 is an example of measurement results of thermal strain.

EMBODIMENT OF THE INVENTION Below, embodiment of this invention is described in detail.

1 is a cross-sectional view showing a tape 10 for semiconductor processing according to an embodiment of the present invention. When the tape 10 for semiconductor processing of this invention divides a wafer into a chip | tip by expansion, the adhesive bond layer 13 is parted along a chip | tip. The tape 10 for semiconductor processing contains the adhesive tape 15 containing the adhesive film 12 formed on the base film 11 and the base film 11, and the adhesive bond layer 13 formed on the adhesive layer 12. FIG. ), And the back surface of the wafer is bonded onto the adhesive layer 13. In addition, each layer may be cut | disconnected (precut) to a predetermined shape previously according to a use process and an apparatus. In addition, the tape 10 for semiconductor processing of this invention may be the form cut | disconnected for every wafer, or the form which wound up the long sheet in which the multiple cut | disconnected every wafer is formed in roll shape may be sufficient. Below, the structure of each layer is demonstrated.

 <Substrate film>

The base film 11 is preferable at the point which can cut | disconnect a wafer in all directions in the expansion process, without biasing, if it has uniform and isotropic expandability, It does not specifically limit about the material. In general, the crosslinked resin has a greater restoring force against tension than the non-crosslinked resin, and has a large shrinkage stress when heat is applied to the stretched state after the expansion process. Therefore, it is excellent in the point that the loosening which generate | occur | produced in the tape after an expansion process is removed by heat shrink, and a tape is tensioned and the individual chip | tip gap (cuff width) is maintained stably. Among the crosslinked resins, thermoplastic crosslinked resins are more preferably used. On the other hand, non-crosslinked resin has a small restoring force with respect to crosslinking resin. Therefore, after the expansion process in a low temperature region such as -15 ° C to 0 ° C, it is once relaxed and returned to room temperature, so that the tape is hardly shrunk toward the pick-up process and the mount process. It is excellent in the point which can prevent an adhesive bond layer from touching. Among the non-crosslinked resins, olefin-based noncrosslinked resins are more preferably used.

As such a thermoplastic crosslinking resin, the ternary copolymer which made the ethylene- (meth) acrylic acid binary copolymer or the ethylene- (meth) acrylic acid- (meth) acrylic acid alkylester the main polymer structural component as a metal ion, for example Crosslinked ionomer resin is illustrated. These are particularly suitable in view of uniform expandability, in that they are suitable for the expansion process and also have a strong restoring force upon heating by crosslinking. Although the metal ion contained in the said ionomer resin is not specifically limited, Although zinc, sodium, etc. are mentioned, Zinc ion is low in elution property and is preferable at the point of low pollution. In the (meth) acrylic acid alkyl ester of the terpolymer, it is preferable that the alkyl group having 1 to 4 carbon atoms has a high elastic modulus and can propagate a strong force to the wafer. As such (meth) acrylic-acid alkylester, methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, etc. are mentioned.

In addition to the ionomer resin, the above-mentioned thermoplastic crosslinked resins may be electron beams with respect to a resin selected from low density polyethylene having a specific gravity of 0.910 or more and less than 0.930, ultra low density polyethylene having a specific gravity of less than 0.910, and other ethylene-vinyl acetate copolymers. It is also suitable to crosslink by irradiating such energy rays. Such a thermoplastic crosslinked resin has a uniform uniform expandability in that a crosslinked portion and a non-crosslinked portion coexist in the resin. Moreover, since a strong restoring force acts at the time of heating, it is suitable also for removing the relaxation of the tape which arose in the expansion process, and since it contains little chlorine in the structure of a molecular chain, even if it burns and discards the tape which became unnecessary after use, Since it does not generate chlorinated aromatic hydrocarbons such as dioxins and their analogs, the environmental load is also small. By suitably preparing the quantity of the energy beam irradiated with respect to the said polyethylene and ethylene-vinyl acetate copolymer, resin which has sufficient uniform expandability can be obtained.

Moreover, as a non-crosslinking resin, the mixed resin composition of a polypropylene and a styrene butadiene copolymer is illustrated, for example.

As the polypropylene, for example, a homopolymer of propylene or a block or random propylene-ethylene copolymer can be used. Random propylene-ethylene copolymers are preferred because of their low rigidity. If the content rate of the ethylene structural unit in a propylene ethylene copolymer is 0.1 weight% or more, it is excellent in the rigidity of a tape and the high compatibility of resin in mixed resin composition. When the rigidity of the tape is appropriate, the cutting property of the wafer is improved, and when the compatibility between resins is high, the extrusion discharge amount is easily stabilized. More preferably, it is 1 weight% or more. Moreover, when the content rate of the ethylene structural unit in a propylene ethylene copolymer is 7 weight% or less, it is excellent at the point which polypropylene becomes stable and it is easy to superpose | polymerize. More preferably, it is 5 weight% or less.

As a styrene-butadiene copolymer, you may use what hydrogenated. When the styrene-butadiene copolymer is hydrogenated, compatibility with propylene is good and embrittlement and discoloration due to oxidative deterioration due to double bonds in butadiene can be prevented. Moreover, when the content rate of the styrene structural unit in a styrene-butadiene copolymer is 5 weight% or more, it is preferable at the point which a styrene-butadiene copolymer is stable and it is easy to superpose | polymerize. Moreover, in 40 weight% or less, it is flexible and is excellent in the point of expandability. More preferably, it is 25 weight% or less, More preferably, it is 15 weight% or less. As the styrene-butadiene copolymer, either a block copolymer or a random copolymer can be used. The random copolymer is preferable because the styrene phase is uniformly dispersed and the rigidity can be prevented from becoming too large, and the expandability is improved.

When the content rate of polypropylene in a mixed resin composition is 30 weight% or more, it is excellent at the point which can suppress the thickness nonuniformity of a base film. If the thickness is uniform, the expandability is easily isotropic, and the stress relaxation property of the base film is too large, and the distance between the chips is small over time, and it is easy to prevent the adhesive layers from contacting and re-fusion. More preferably, it is 50 weight% or more. Moreover, when the content rate of polypropylene is 90 weight% or less, it is easy to adjust the rigidity of a base film suitably. If the rigidity of the base film is too large, the force required to expand the base film increases, so that the load on the apparatus increases, and it may not be possible to expand enough to divide the wafer or the adhesive layer 13. It is important to adjust. As for the minimum of the content rate of the styrene-butadiene copolymer in a mixed resin composition, 10 weight% or more is preferable and it is easy to adjust to the rigidity of the base film suitable for an apparatus. The upper limit is excellent in the point which can suppress thickness nonuniformity, if it is 70 weight% or less, and 50 weight% or less is more preferable.

In addition, in the example shown in FIG. 1, although the base film 11 is a single | mono layer, it is not limited to this, The multi-layered structure which laminated | stacked 2 or more types of resin may be sufficient, and one type of resin may be laminated | stacked in 2 or more layers. . If two or more kinds of resins are cross-linkable or non-cross-linkable, they are preferable from the viewpoint of enhancing and expressing their respective properties, and in the case of laminating a combination of cross-linking and non-crosslinking properties, each defect is compensated for. desirable. Although the thickness of the base film 11 is not specifically defined, In the expansion process of the tape 10 for a semiconductor process, it is easy to be stretched, and what is necessary is just to have sufficient strength so that it may not be broken. For example, about 50-300 micrometers is good and 70 micrometers-200 micrometers are more preferable.

As a manufacturing method of the base film 11 of multiple layers, a conventionally well-known extrusion method, the lamination method, etc. can be used. When using the lamination method, you may interpose an adhesive agent between layers. As the adhesive, a conventionally known adhesive can be used.

<Adhesive layer>

The adhesive layer 12 can be formed by coating the adhesive composition on the base film 11. The adhesive layer 12 which comprises the tape 10 for semiconductor processing of this invention does not generate | occur | produce peeling with the adhesive bond layer 13 at the time of dicing, and it does not generate | occur | produce defects, such as chip scattering, What is necessary is just to have the characteristic which peeling with the adhesive bond layer 13 becomes easy at the time of pick-up.

In the tape 10 for semiconductor processing of this invention, although the structure of the adhesive composition which comprises the adhesive layer 12 is not specifically limited, In order to improve the pick-up property after dicing, an energy ray curable thing is preferable and after hardening, It is preferable that it is a material from which peeling with the adhesive bond layer 13 becomes easy. In one aspect, the adhesive composition contains, as a base resin, 60 mol% or more of a (meth) acrylate having an alkyl chain having 6 to 12 carbon atoms, and an iodine having 5 to 30 energy ray-curable carbon-carbon double bonds. One having a polymer (A) having In addition, an energy ray means ionizing radiation, such as a light ray like an ultraviolet-ray, or an electron beam here.

In such a polymer (A), when the amount of energy ray-curable carbon-carbon double bonds to be introduced is 5 or more in iodine value, the effect of reducing the adhesive force after energy ray irradiation is excellent. More preferably, it is 10 or more. In addition, when the iodine number is 30 or less, the holding force of the chip until the pick-up after irradiation with energy rays is high, which is excellent in that it is easy to enlarge the gap between the chips at the time of expansion immediately before the pick-up process. If the gap of the chip | tip can fully be enlarged before a pick-up process, it is preferable because the image recognition of each chip at the time of pick-up becomes easy, or it becomes easy to pick-up. Moreover, since the polymer (A) itself has stability and manufacture becomes easy when the introduction amount of a carbon-carbon double bond is 5 or more and 30 or less in iodine value, it is preferable.

Moreover, when a glass transition temperature is -70 degreeC or more, a polymer (A) is excellent in the heat resistance with respect to the heat accompanying energy ray irradiation, More preferably, it is -66 degreeC or more. Moreover, when it is 15 degrees C or less, it is excellent in the point of the scattering prevention effect of the chip after dicing in the wafer with a rough surface state, More preferably, it is 0 degrees C or less, More preferably, it is -28 degrees C or less.

The polymer (A) may be produced in any way, but is obtained by, for example, mixing an acrylic copolymer with a compound having an energy ray-curable carbon-carbon double bond, or an acrylic copolymer having a functional group or a methacryl having a functional group. What is obtained by making the system copolymer (A1), the functional group which can react with the functional group, and the compound (A2) which has an energy-beam curable carbon-carbon double bond react is used.

Among these, as a methacryl-type copolymer (A1) which has the said functional group, the monomer (A1-1) which has carbon-carbon double bonds, such as an alkyl acrylate or an alkyl methacrylate, and a carbon-carbon double bond In addition, what is obtained by co-polymerizing the monomer (A1-2) which has a functional group is illustrated. As the monomer (A1-1), hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, having an alkyl chain having 6 to 12 carbon atoms Pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate or methacrylates similar to these, which are monomers having 5 or less carbon atoms in the aryl acrylate or the alkyl chain. have.

Moreover, since the peeling force of an adhesive layer and an adhesive bond layer can reduce the component whose carbon number of an alkyl chain is 6 or more in monomer (A1-1), it is excellent in the pick-up property. Moreover, the component of 12 or less is low in the elasticity modulus at room temperature, and is excellent in the point of the adhesive force of the interface of an adhesive layer and an adhesive bond layer. When the adhesive force of the interface of an adhesive layer and an adhesive bond layer is high, since the interface shift | offset | difference of an adhesive layer and an adhesive bond layer can be suppressed at the time of extending | stretching a tape and cutting a wafer, since cutting property improves, it is preferable.

As the monomer (A1-1), the glass transition temperature is lower as the monomer having a larger carbon number of the alkyl chain is used. Thus, the pressure-sensitive adhesive composition having a desired glass transition temperature can be prepared by appropriate selection. Moreover, in addition to glass transition temperature, it is also possible to mix | blend the low molecular compound which has carbon-carbon double bonds, such as vinyl acetate, styrene, and acrylonitrile, for the purpose of improving various performances, such as compatibility. In that case, these low molecular weight compounds shall mix | blend within the range of 5 mass% or less of the gross mass of monomer (A1-1).

On the other hand, as a functional group which monomer (A1-2) has, a carboxyl group, a hydroxyl group, an amino group, a cyclic acid anhydride group, an epoxy group, an isocyanate group, etc. are mentioned, As a specific example of monomer (A1-2), acrylic acid, methacrylic acid, shin Namsan, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylates, N-methylol acrylamide, N- Methylol methacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride , Glycidyl acrylate, glycidyl methacrylate, allyl glycidyl ether and the like.

In addition, in the compound (A2), when the functional group which a compound (A1) has is a carboxyl group or a cyclic acid anhydride group, a hydroxyl group, an epoxy group, an isocyanate group, etc. are mentioned, and when it is a hydroxyl group, it is cyclic An acid anhydride group, an isocyanate group, etc. are mentioned, In the case of an amino group, an epoxy group, an isocyanate group, etc. are mentioned, In the case of an epoxy group, a carboxyl group, a cyclic acid anhydride group, an amino group, etc. are mentioned, As a specific example, a monomer (A1) is mentioned. The same thing as what was listed in the specific example of -2) can be enumerated. In addition, as the compound (A2), a part of the isocyanate group of the polyisocyanate compound may be one obtained by urethanization of a monomer having a hydroxyl group or a carboxyl group and an energy ray-curable carbon-carbon double bond.

In addition, in reaction of a compound (A1) and a compound (A2), a desired thing can be manufactured regarding characteristics, such as an acid value or a hydroxyl value, by leaving an unreacted functional group. If the OH group is left so that the hydroxyl value of the polymer (A) is 5 to 100, the risk of pickup miss can be further reduced by reducing the adhesive force after energy ray irradiation. Moreover, when leaving a COOH group so that the acid value of a polymer (A) may be 0.5-30, the improvement effect after restoration of the adhesive layer after extending the tape for semiconductor processing of this invention is obtained, and it is preferable. If the hydroxyl value of a polymer (A) is 5 or more, it is excellent in the point of the adhesive force reduction effect after energy-beam irradiation, and if it is 100 or less, it is excellent in the fluidity | liquidity point of the adhesive after energy-beam irradiation. Moreover, when acid value is 0.5 or more, it is excellent in the point of tape resilience, and when it is 30 or less, it is excellent in the fluidity of an adhesive.

In the synthesis of the above polymer (A), as the organic solvent when the reaction is carried out by solution polymerization, ketone-based, ester-based, alcohol-based or aromatic-based ones can be used. Among them, toluene, ethyl acetate, and isopropyl alcohol. , A benzenemethyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone and the like, are generally good solvents of acrylic polymers, and solvents having a boiling point of 60 to 120 ° C are preferred, and α, α'-azo is preferred as a polymerization initiator. Radical generators, such as azobis type | system | groups, such as bisisobutyl nitrile, and organic peroxides, such as benzoyl peroxide, are normally used. At this time, a catalyst and a polymerization inhibitor can be used together as needed, and the polymer (A) of desired molecular weight can be obtained by adjusting superposition | polymerization temperature and superposition | polymerization time. In addition, it is preferable to use a mercaptan and a carbon tetrachloride solvent about adjusting molecular weight. In addition, this reaction is not limited to solution polymerization, Other methods, such as block polymerization and suspension polymerization, may be sufficient.

Although a polymer (A) can be obtained as mentioned above, in this invention, when the molecular weight of a polymer (A) is 300,000 or more, it is excellent at the point which can raise cohesion force. When the cohesion force is high, there is an effect of suppressing the misalignment at the interface with the adhesive layer at the time of expansion, and since the propagation of the tensile force becomes easy to the adhesive bond layer, it is preferable at the point which the dividing property of an adhesive bond layer improves. When the molecular weight of the polymer (A) is made 2 million or less, it is excellent in the point of the gelation suppression at the time of a synthesis | combination and a coating. In addition, the molecular weight in this invention is the mass mean molecular weight of polystyrene conversion.

In addition, in the tape 10 for semiconductor processing of this invention, the resin composition which comprises the adhesive layer 12 may have the compound (B) which acts as a crosslinking agent further in addition to a polymer (A). For example, polyisocyanate, melamine formaldehyde resin, and an epoxy resin are mentioned, These can be used individually or in combination of 2 or more types. This compound (B) reacts with a polymer (A) or a base film, and can improve the cohesion force of the adhesive which has polymer (A) and (B) as a main component after coating of an adhesive composition by the resulting crosslinked structure.

There is no restriction | limiting in particular as polyisocyanate, For example, 4,4'- diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4,4'- diphenyl ether diisocyanate, 4,4'- [ Aromatic isocyanates such as 2,2-bis (4-phenoxyphenyl) propane] diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicy Chlorohexyl methane diisocyanate, 2,4'- dicyclohexyl methane diisocyanate, lysine diisocyanate, lysine triisocyanate, etc. are mentioned, Specifically, coronate L (made by Nippon Polyurethanes Ltd., brand name) etc. are mentioned. Can be used. Specific examples of the melamine formaldehyde resin include Nikalak MX-45 (manufactured by Sanwa Chemical Co., Ltd., brand name), Melan (manufactured by Hitachi Kasei Kogyo Co., Ltd., etc.). As an epoxy resin, TETRADX (Mitsubishi Chemical Corporation, brand name) etc. can be used. In this invention, it is especially preferable to use polyisocyanate.

The adhesive layer which made the addition amount of a compound (B) into 0.1 mass part or more with respect to 100 mass parts of polymers (A) is excellent in the point of cohesion force. More preferably, it is 0.5 mass part or more. Moreover, the adhesive layer set to 10 mass parts or less is excellent in the point of the rapid gelation suppression at the time of coating, and workability | operativity, such as compounding and application | coating of an adhesive, becomes favorable. More preferably, it is 5 mass parts or less.

In addition, in this invention, the adhesive layer 12 may contain the photoinitiator (C). There is no restriction | limiting in particular in the photoinitiator (C) contained in the adhesive layer 12, What is conventionally known can be used. For example, benzophenones such as benzophenone, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4,4'-dichlorobenzophenone, acetophenone, diethoxyacetophenone and the like Anthraquinones such as acetophenones, 2-ethyl anthraquinone and t-butyl anthraquinone, 2-chloro thioxanthone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triaryl An imidazole dimer (roffin dimer), an acridine type compound, etc. are mentioned, These can be used individually or in combination of 2 or more types. As addition amount of a photoinitiator (C), it is preferable to mix | blend 0.1 mass part or more with respect to 100 mass parts of polymers (A), and 0.5 mass part or more is more preferable. Moreover, the upper limit of 10 mass parts or less is preferable, and 5 mass parts or less are more preferable.

Moreover, a tackifier, an adhesive adjuvant, surfactant, etc., other modifiers, etc. can be mix | blended with the energy ray curable adhesive used for this invention as needed. Moreover, you may add an inorganic compound filler suitably.

The adhesive layer 12 can be formed using the conventional method of forming an adhesive layer. For example, the pressure-sensitive adhesive composition is applied to a predetermined surface of the base film 11 and formed, or the pressure-sensitive adhesive composition is coated on a separator (for example, a plastic film or sheet coated with a release agent). After apply | coating and forming the adhesive layer 12, the adhesive layer 12 can be formed on the base film 11 by the method of transferring the said adhesive layer 12 to the predetermined surface of a base material. In addition, the adhesive layer 12 may have the form of a single | mono layer, and may have a laminated form.

Although there is no restriction | limiting in particular as thickness of the adhesive layer 12, When thickness is 2 micrometers or more, it is excellent in the point of tag force, and 5 micrometers or more are more preferable. Pickup property is excellent in it being 15 micrometers or less, and 10 micrometers or less are more preferable.

The adhesive tape 15 is a TD (Transverse) and the average value of the differential value of the thermal strain rate for every 1 degreeC between 40 degreeC and 80 degreeC measured at the time of temperature rising by the thermomechanical characteristic tester in MD (Machine Direction) direction. Direction) The sum of the average value of the differential value of the thermal strain rate for every 1 degreeC between 40 degreeC and 80 degreeC measured at the time of temperature rising by the thermomechanical characteristic tester in the direction is a negative value, ie less than zero. MD direction is the flow direction at the time of film film-forming, and TD direction is a direction perpendicular | vertical with respect to MD direction.

The average value of the differential value of the thermal strain in every 1 degreeC between 40 degreeC and 80 degreeC measured at the time of temperature rising by the thermomechanical property tester in MD direction of the adhesive tape 15, and the thermomechanical property in the TD direction The semiconductor processing tape 10 can be shrunk by heating at a low temperature for a short time by adding the average of the average value of the differential values of the thermal strain at 1 ° C between 40 ° C and 80 ° C measured at the time of temperature increase by a tester. have. Therefore, even in the case where a pair of hot air nozzles are circulated by heating and shrinking in a portion where the tape 10 for semiconductor processing has occurred, the expansion and contraction can be performed in a short time without reducing the amount of expansion and heating several times. The loosening caused by this can be eliminated to maintain an appropriate cuff width.

A thermal strain can measure the amount of deformation by temperature based on JISK7197: 2012, and can calculate it from following formula (1).

In addition, the deformation amount defines the expansion direction of the sample, and the shrinkage direction is negative.

The differential value of the thermal strain becomes like the curve in the MD direction or the curve in the TD direction in FIG. 9, and the sum of the average value of the derivative value in the MD direction and the average value in the TD direction is a negative value. That means that the adhesive tape generally exhibits shrinkage behavior between 40 ° C and 80 ° C.

In order to make the sum of the average value of the derivative value in the said MD direction and the average value of the derivative value in a TD direction into a negative value, the process of extending | stretching after forming a resin film is added, and the adhesive tape 15 is comprised, What is necessary is just to adjust the thickness of the adhesive tape 15, and the stretch amount of MD direction or TD direction according to the kind of resin. Examples of the method of stretching the adhesive tape in the TD direction include a method of using a tenter, a method of blow molding (inflation), a method of using an expand roll, and the method of stretching an adhesive tape in the MD direction. And the method of pulling in a conveyance roll, etc. are mentioned. What kind of method may be used as a method of obtaining the adhesive tape 15 of this invention.

<Adhesive layer>

In the tape 10 for semiconductor processing of this invention, the adhesive bond layer 13 peels from the adhesive layer 12 and adheres to a chip, when a wafer is bonded and diced and a chip is picked up. And it is used as an adhesive agent when fixing a chip to a board | substrate or a lead frame.

Although the adhesive bond layer 13 is not specifically limited, What is necessary is just a film adhesive generally used for a wafer, for example, what contains a thermoplastic resin and a thermopolymerizable component. As for the said thermoplastic resin used for the adhesive bond layer 13 of this invention, resin which has thermoplasticity or resin which has thermoplasticity in an uncured state, and forms a crosslinked structure after heating is preferable, and there is no restriction | limiting in particular, One aspect As a weight average molecular weight, 5000-200,000 and the thermoplastic resin whose glass transition temperature is 0-150 degreeC are mentioned. Moreover, as another aspect, the thermoplastic resin whose weight average molecular weights are 100,000-1,000,000 and whose glass transition temperature is -50-20 degreeC is mentioned.

As the former thermoplastic resin, for example, polyimide resin, polyamide resin, polyetherimide resin, polyamideimide resin, polyester resin, polyesterimide resin, phenoxy resin, polysulfone resin, polyether sulfone resin, poly Phenylene sulfide resin, polyether ketone resin, etc. are mentioned, It is preferable to use polyimide resin and a phenoxy resin among these, and it is preferable to use the polymer containing a functional group as a latter thermoplastic resin.

A polyimide resin can be obtained by condensation reaction of tetracarboxylic dianhydride and diamine by a well-known method. That is, in an organic solvent, tetracarboxylic dianhydride and diamine are used equimolar or almost equimolar (addition order of each component is arbitrary), and addition reaction is made at reaction temperature of 80 degrees C or less, Preferably it is 0-60 degreeC. As the reaction proceeds, the viscosity of the reaction solution gradually rises to produce polyamic acid, which is a precursor of polyimide. The molecular weight of this polyamic acid can also be adjusted by heating and depolymerizing at the temperature of 50-80 degreeC. The polyimide resin can be obtained by dehydrating and closing the reaction product (polyamic acid). Dehydration ring closure can be performed by the thermal ring closure method which heat-processes, and the chemical ring closure method which uses a dehydrating agent.

There is no restriction | limiting in particular as tetracarboxylic dianhydride which can be used as a raw material of polyimide resin, For example, 1, 2- (ethylene) bis (trimellitate anhydride), 1, 3- (trimethylene) bis (tri Mellitate anhydride), 1,4- (tetramethylene) bis (trimelitate anhydride), 1,5- (pentamethylene) bis (trimelitate anhydride), 1,6- (hexamethylene) bis (trimelitate Anhydride), 1,7- (heptamethylene) bis (trimethate anhydride), 1,8- (octamethylene) bis (trimelitate anhydride), 1,9- (nonmethylene) bis (trimelitate anhydride) , 1,10- (decamethylene) bis (trimelitate anhydride), 1,12- (dodecamethylene) bis (trimelitate anhydride), 1,16- (hexadecamethylene) bis (trimelitate anhydride) , 1,18- (octadecamethylene) bis (trimelitate anhydride), pyromellitic dianhydride, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride, 2,2', 3 , 3'-biphenyltetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) propane dianhydride, 1 , 1-bis (2,3-dicarboxyphenyl) ethane dianhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane dianhydride, bis (2,3-dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl) sulfone dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, bis (3,4- Dicarboxyphenyl) ether dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 3,4,3 ', 4'-benzophenonetetracarboxylic dianhydride, 2,3,2' , 3'-benzophenonetetracarboxylic dianhydride, 3,3,3 ', 4'-benzophenonetetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 1, 4,5,8-naphthalenetetracarboxylic dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 1,2,4,5-naphthalenetetracarboxylic dianhydride , 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,3,6 , 7-tetrachloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, phenanthrene-1,8,9,10-tetracarboxylic dianhydride, pyrazine-2,3,5,6- Tetracarboxylic dianhydride, thiophene-2,3,5,6-tetracarboxylic dianhydride, 2,3,3 ', 4'-biphenyltetracarboxylic dianhydride, 3,4,3' , 4'-biphenyltetracarboxylic dianhydride, 2,3,2 ', 3'-biphenyltetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) dimethylsilane dianhydride, bis (3 , 4-dicarboxyphenyl) methylphenylsilane dianhydride, bis (3,4-dicarboxyphenyl) diphenylsilane dianhydride, 1,4-bis (3,4-dicarboxyphenyldimethylsilyl) benzene dianhydride, 1, 3-bis (3,4-dicarboxyphenyl) -1,1,3,3-tetramethyldicyclohexane dianhydride, p-phenylenebis (trimelitate anhydride), ethylenetetracarbox Carboxylic acid dianhydride, 1,2,3,4-butanetetracarboxylic dianhydride, decahydronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3 , 5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrrolidine-2, 3,4,5-tetracarboxylic dianhydride, 1,2,3,4-cyclobutanetetracarboxylic dianhydride, bis (exo-bicyclo [2,2,1] heptane-2,3-dica Carboxylic acid dianhydride, bicyclo- [2,2,2] -oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxy Phenyl) hexafluoropropane dianhydride, 2,2-bis [4- (3,4-dicarboxyphenyl) phenyl] hexafluoropropane dianhydride, 4,4'-bis (3,4-dicarboxyphenoxy ) Diphenyl sulfide dianhydride, 1,4-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimelitic anhydride), 1,3-bis (2-hydroxyhexafluoroisopropyl) benzene Vis ( Limellitic anhydride), 5- (2,5-dioxotetrahydropril) -3-methyl-3-cyclohexene-1,2-dicarboxylic dianhydride, tetrahydrofuran-2,3,4, 5-tetracarboxylic dianhydride etc. can be used and one or two or more of these can also be used together.

Moreover, there is no restriction | limiting in particular as diamine which can be used as a raw material of a polyimide, For example, o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3'- diamino diphenyl ether, 3 , 4'-diaminodiphenylether, 4,4'-diaminodiphenylether, 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 4,4'-diamino Diphenylethmethane, bis (4-amino-3,5-dimethylphenyl) methane, bis (4-amino-3,5-diisopropylphenyl) methane, 3,3'-diaminodiphenyldifluoro Methane, 3,4'-diaminodiphenyldifluoromethane, 4,4'-diaminodiphenyldifluoromethane, 3,3'-diaminodiphenylsulfone, 3,4'-diaminodiphenyl Sulfone, 4,4'-diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfide, 3,4'-diaminodiphenylsulfide, 4,4'-diaminodiphenylsulfide, 3 , 3'-diaminodiphenylketone, 3,4'-diaminodiphenylketone, 4,4'-diaminodiphenylketone, 2,2-bis (3-aminofe Nil) propane, 2,2 '-(3,4'-diaminodiphenyl) propane, 2,2-bis (4-aminophenyl) propane, 2,2-bis (3-aminophenyl) hexafluoropropane , 2,2- (3,4'-diaminodiphenyl) hexafluoropropane, 2,2-bis (4-aminophenyl) hexafluoropropane, 1,3-bis (3-aminophenoxy) benzene , 1,4-bis (3-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 3,3 '-(1,4-phenylenebis (1-methylethylidene) ) Bisaniline, 3,4 '-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 4,4'-(1,4-phenylenebis (1-methylethylidene) ) Bisaniline, 2,2-bis (4- (3-aminophenoxy) phenyl) propane, 2,2-bis (4- (4-aminophenoxy) phenyl) propane, 2,2-bis (4- (3-aminophenoxy) phenyl) hexafluoropropane, 2,2-bis (4- (4-aminophenoxy) phenyl) hexafluoropropane, bis (4- (3-aminophenoxy) phenyl) sulphate Feed, bis (4- (4-aminophenoxy) phenyl) sulfide, bis (4- (3-aminophenoxy) phenyl) sulfone, bis (4- (4-a Nophenoxy) phenyl) sulfone, aromatic diamines such as 3,5-diaminobenzoic acid, 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminophen Tan, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoounde Can, 1,12-diaminododecane, 1,2-diaminocyclohexane, diaminopolysiloxane represented by the following formula (1), 1,3-bis (aminomethyl) cyclohexane, manufactured by Sun Techno Chemical Co., Ltd. Aliphatic diamines, such as polyoxyalkylenediamine, such as pamine D-230, D-400, D-2000, D-4000, ED-600, ED-900, ED-2001, and EDR-148, etc. can be used, These You may use together 1 type (s) or 2 or more types. As glass transition temperature of the said polyimide resin, it is preferable that it is 0-200 degreeC, and as a weight average molecular weight, it is preferable that it is 10,000-200,000.

(In formula, R1 and R2 represent a C1-C30 divalent hydrocarbon group, respectively, may be same or different, R3 and R4 represent a monovalent hydrocarbon group, may respectively be same or different, m is an integer of 1 or more )

As the phenoxy resin, which is one of the preferred thermoplastic resins other than the above, a resin obtained by a method of reacting various bisphenols and epichlorohydrin or a method of reacting a liquid epoxy resin and bisphenol is preferable. As bisphenols, bisphenol A, Bisphenol bisphenol AF, bisphenol AD, bisphenol F, bisphenol S is mentioned. Since phenoxy resin is similar in structure to an epoxy resin, compatibility with an epoxy resin is good, and it is suitable for providing favorable adhesiveness to an adhesive film.

As a phenoxy resin used by this invention, resin which has a repeating unit represented by following General formula (2) is mentioned, for example.

In Chemical Formula 2, X represents a single bond or a divalent linking group. Examples of the divalent linking group include an alkylene group, a phenylene group, -O-, -S-, -SO-, and -SO _2- . Here, a C1-C10 alkylene group is preferable and -C (R1) (R2)-is more preferable. R1 and R2 represent a hydrogen atom or an alkyl group, and as the alkyl group, a linear or branched alkyl group having 1 to 8 carbon atoms is preferable, and for example, methyl, ethyl, n-propyl, isopropyl, isooctyl, 2-ethylhexyl, 1,3,3-trimethylbutyl etc. are mentioned. In addition, this alkyl group may be substituted by the halogen atom, for example, a trifluoromethyl group is mentioned. X is an alkylene group, -O-, -S-, a fluorene group or a -SO ₂ - more preferably - are preferable, an alkylene group, and -SO _2. Among them, -C (CH ₃ ) _2- , -CH (CH ₃ )-, -CH _2- , -SO ₂ -are preferable, -C (CH ₃ ) _2- , -CH (CH ₃ )-, -CH ₂ -is more preferred, and -C (CH ₃ ) ₂ -is particularly preferred.

If the phenoxy resin represented by the said Formula (2) has a repeating unit, even if it is resin which has two or more repeating units with different X of the said Formula (2), X may contain only the same repeating unit. In this invention, resin in which X contains only the same repeating unit is preferable.

In addition, when the phenoxy resin represented by the formula (2) contains a polar substituent such as a hydroxyl group or a carboxyl group, compatibility with the thermally polymerizable component is improved, and uniform appearance and properties can be imparted.

If the mass average molecular weight of a phenoxy resin is 5000 or more, it is excellent in the point of film formation. More preferably, it is 10,000 or more, More preferably, it is 30,000 or more. Moreover, when a mass mean molecular weight is 150,000 or less, it is preferable at the point of the fluidity | liquidity at the time of heat press bonding, or compatibility with another resin. More preferably, it is 100,000 or less. Moreover, when glass transition temperature is -50 degreeC or more, it is excellent in the point of film formation, More preferably, it is 0 degreeC or more, More preferably, it is 50 degreeC or more. When glass transition temperature is 150 degreeC, the adhesive force of the adhesive bond layer 13 at the time of die bonding is excellent, More preferably, it is 120 degrees C or less, More preferably, it is 110 degrees C or less.

On the other hand, as a functional group in the polymer containing the said functional group, glycidyl group, acryloyl group, methacryloyl group, a hydroxyl group, a carboxyl group, an isocyanurate group, an amino group, an amide group, etc. are mentioned, for example, Among them, glycidyl group is preferable.

As a high molecular weight component containing the said functional group, the (meth) acryl copolymer etc. containing functional groups, such as glycidyl group, a hydroxyl group, and a carboxyl group, are mentioned, for example.

As said (meth) acryl copolymer, a (meth) acrylic ester copolymer, an acrylic rubber, etc. can be used, for example, An acrylic rubber is preferable. An acrylic rubber is a rubber which contains acrylate ester as a main component and mainly contains copolymers, such as butyl acrylate and acrylonitrile, copolymers, such as ethyl acrylate and acrylonitrile.

As a functional group, when it contains a glycidyl group, 0.5-6.0 weight% is preferable, as for the quantity of a glycidyl group containing repeating unit, 0.5-5.0 weight% is more preferable, 0.8-5.0 weight% is especially preferable. A glycidyl group containing repeating unit is a constituent monomer of the (meth) acryl copolymer containing a glycidyl group, and is glycidyl acrylate or glycidyl methacrylate specifically ,. When the amount of the glycidyl group-containing repeating unit is in this range, the adhesive force can be secured and gelation can be prevented.

As a constituent monomer of the said (meth) acryl copolymer other than glycidyl acrylate and glycidyl methacrylate, ethyl (meth) acrylate, butyl (meth) acrylate, etc. are mentioned, for example, These are, You may use individually or in combination of 2 or more types. In the present invention, ethyl (meth) acrylate refers to ethyl acrylate and / or ethyl methacrylate. What is necessary is just to determine the mixing ratio in the case of using combining a functional monomer in consideration of the glass transition temperature of a (meth) acryl copolymer. When glass transition temperature is set to -50 degreeC or more, it is preferable at the point which is excellent in film formability and can suppress excessive tag at normal temperature. If the tag force at normal temperature is excessive, handling of the adhesive layer becomes difficult. More preferably, it is -20 degreeC or more, More preferably, it is 0 degreeC or more. Moreover, when glass transition temperature is 30 degrees C or less, it is excellent in the point of the adhesive force of the adhesive bond layer at the time of die bonding, More preferably, it is 20 degrees C or less.

When polymerizing the said monomer and manufacturing a high molecular weight component containing a functional monomer, there is no restriction | limiting in particular as the polymerization method, For example, methods, such as pearl polymerization and solution polymerization, can be used, and pearl polymerization is the desirable.

In this invention, when the weight average molecular weight of the high molecular weight component containing a functional monomer is 100,000 or more, it is excellent in the point of film formation, More preferably, it is 200,000 or more, More preferably, it is 500,000 or more. Moreover, when adjusting a weight average molecular weight to 2,000,000 or less, it is excellent in the heat fluidity of the adhesive bond layer at the time of die bonding improving. When the heat fluidity of the adhesive bond layer at the time of die bonding improves, adhesiveness of an adhesive bond layer and a to-be-adhered body will become favorable, an adhesive force can be improved, and the unevenness | corrugation of a to-be-adhered body will be embedded, and it will become easy to suppress a void. More preferably, it is 1,000,000 or less, More preferably, it is 800,000 or less, and when it is 500,000 or less, a larger effect can be obtained.

The thermopolymerizable component is not particularly limited as long as it is polymerized by heat. For example, functional groups such as glycidyl group, acryloyl group, methacryloyl group, hydroxyl group, carboxyl group, isocyanurate group, amino group and amide group And a trigger material, and these may be used alone or in combination of two or more thereof. However, in consideration of the heat resistance as the adhesive layer, a thermosetting resin cured by heat and exerting an adhesive action may be used as a curing agent and an accelerator. It is preferable to contain together. Examples of thermosetting resins include epoxy resins, acrylic resins, silicone resins, phenol resins, thermosetting polyimide resins, polyurethane resins, melamine resins, urea resins, and the like. In particular, adhesives excellent in heat resistance, workability, and reliability It is most preferable to use an epoxy resin at the point from which a layer is obtained.

The epoxy resin is not particularly limited as long as it is cured and has an adhesive action, and novolac epoxy resins such as bifunctional epoxy resins such as bisphenol A epoxy, phenol novolac epoxy resins and cresol novolac epoxy resins, etc. Can be used. Moreover, what is generally known, such as a polyfunctional epoxy resin, a glycidylamine type | mold epoxy resin, a heterocyclic containing epoxy resin, or an alicyclic epoxy resin, can be applied.

As said bisphenol A epoxy resin, Epicoat series (Epicoat 807, Epicoat 815, Epicoat 825, Epicoat 827, Epicoat 828, Epicoat 834, Epicoat 1001, Epicoat) by Mitsubishi Chemical Corporation 1004, Epicoat 1007, Epicoat 1009), Dow Chemical Co., DER-330, DER-301, DER-361, Shinnitetsu Sumikin Kagaku Co., Ltd., YD8125, YDF8170, etc. are mentioned. As said phenol novolak-type epoxy resin, Epicoat 152 by Mitsubishi Chemical Corporation, Epicoat 154, EPPN-201 by Nippon Kayaku Co., Ltd., DEN-438 by Dow Chemical Company, etc. are further mentioned above. As o-cresol novolak-type epoxy resin of EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012 made by Nihon Kayaku Co., Ltd., EOCN-1025, EOCN-1027 and Shinnitetsu Sumikin Kagaku YDCN701, YDCN702, YDCN703, YDCN704, etc. can be mentioned. As said polyfunctional epoxy resin, Epon1031S made by Mitsubishi Chemical Corporation, Araldite 0163 made by Ciba Specialty Chemicals, Denacol EX-611, EX-614, EX-614B by Nagase Chemtex Corporation , EX-622, EX-512, EX-521, EX-421, EX-411, EX-321, and the like. As said amine epoxy resin, Epicoat 604 by Mitsubishi Chemical Corporation, YH-434 by Totosei Chemical Co., Ltd., TETRAD-X and TETRAD-C by Mitsubishi Gas Chemical Co., Ltd., Sumitomo Chemical Corporation And ELM-120 manufactured by Ku Kogyo KK. As said heterocyclic containing epoxy resin, Araldite PT810 by Ciba Specialty Chemicals Corporation, ERL4234, ERL4299, ERL4221, ERL4206 by UCC Corporation, etc. are mentioned. These epoxy resins can be used individually or in combination of 2 or more types.

In order to harden the said thermosetting resin, an additive can be added suitably. As such an additive, a hardening | curing agent, a hardening accelerator, a catalyst, etc. are mentioned, for example, In the case of adding a catalyst, a cocatalyst can be used as needed.

When using an epoxy resin for the said thermosetting resin, it is preferable to use an epoxy resin hardening | curing agent or a hardening accelerator, and it is more preferable to use these together. Examples of the curing agent include phenol resins, dicyandiamides, boron trifluoride complexes, organic hydrazide compounds, amines, polyamide resins, imidazole compounds, urea or thiourea compounds, polymer captan compounds, and polycapacles having mercapto groups at their ends. And sulfide resins, acid anhydrides and photo-ultraviolet curing agents. These can be used individually or in combination of 2 or more types. Among these, the boron trifluoride complex compound may include a boron trifluoride-amine complex with various amine compounds (preferably primary amine compounds), and isophthalic acid dihydrazide is mentioned as the organic hydrazide compound.

Examples of the phenol resins include novolak phenol resins such as phenol novolak resins, phenol aralkyl resins, cresol novolak resins, tert-butylphenol novolak resins and nonylphenol novolak resins, resol type phenol resins, and polypara. Polyoxystyrene, such as oxystyrene, etc. are mentioned. Especially, the phenol type compound which has at least 2 phenolic hydroxyl group in a molecule | numerator is preferable.

As a phenol type compound which has at least 2 phenolic hydroxyl group in the said molecule, For example, a phenol novolak resin, a cresol novolak resin, t-butyl phenol novolak resin, a dicyclopentadiene cresol novolak Resin, dicyclopentadiene phenol novolak resin, xylylene modified phenol novolak resin, naphthol novolak resin, trisphenol novolak resin, tetrakisphenol novolak resin, bisphenol A novolak resin, poly-p-vinylphenol Resin, phenol aralkyl resin, and the like. Moreover, a phenol novolak resin and a phenol aralkyl resin are especially preferable among these phenol resins, and connection reliability can be improved.

Examples of the amines include linear aliphatic amines (diethylenetriamine, triethylenetetramine, hexamethylenediamine, N, N-dimethylpropylamine, benzyldimethylamine, 2- (dimethylamino) phenol, 2,4,6-tris (dimethyl) Aminomethyl) phenol, m-xylenediamine, etc.), cyclic aliphatic amines (N-aminoethylpiperazine, bis (3-methyl-4-aminocyclohexyl) methane, bis (4-aminocyclohexyl) methane, mensendiamine, Isophoronediamine, 1,3-bis (aminomethyl) cyclohexane, etc.), heterocyclic amines (piperazine, N, N-dimethylpiperazine, triethylenediamine, melamine, guanamine, etc.), aromatic amines (metaphenylene Diamine, 4,4'-diaminodiphenylmethane, diamino, 4,4'-diaminodiphenylsulfone, etc.), polyamide resin (polyamideamine is preferred, condensate of dimer acid and polyamine), imidazole Compound (2-phenyl-4,5-dihydroxymethylimidazole, 2-methylimidazole, 2,4-dimethylimidazole, 2-n -Heptadecylimidazole, 1-cyanoethyl-2-undecyl imidazolium trimellitate, epoxy imidazole adduct, etc.), urea or thiourea compound (N, N-dialkylurea compound, N , N-dialkylthiourea compound, etc.), polymer captan compound, polysulfide resin having a mercapto group at the terminal, acid anhydride (such as tetrahydro phthalic anhydride), photo-ultraviolet curing agent (diphenyliodonium hexafluorophosphate , Triphenylsulfonium hexafluorophosphate, and the like).

As said hardening accelerator, if it hardens a thermosetting resin, there will be no restriction | limiting in particular, For example, imidazole, dicyandiamide derivative, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenyl phosphonium tetraphenyl borate, 2- Ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo [5.4.0] undecene-7-tetraphenylborate, and the like.

As imidazole, imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole , 1-benzyl-2-methylimidazole, 1-benzyl-2-ethylimidazole, 1-benzyl-2-ethyl-5-methylimidazole, 2-phenyl-4-methyl-5-hydroxy Dimethylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, etc. are mentioned.

Content in the adhesive bond layer of the hardening | curing agent for hardening | curing agents for epoxy resins, or a hardening accelerator is not specifically limited, Optimal content changes with kinds of hardening | curing agent or hardening accelerator.

It is preferable to mix | blend the compounding ratio of the said epoxy resin and a phenol resin so that the hydroxyl group in a phenol resin per 0.5 equivalent of epoxy groups in the said epoxy resin component may be 0.5-2.0 equivalent. More preferably, it is 0.8-1.2 equivalent. That is, when the compounding ratio of both is out of the said range, sufficient hardening reaction will not advance and it will become easy to deteriorate the characteristic of an adhesive bond layer. In another embodiment, another thermosetting resin and a hardening | curing agent are 0.5-20 mass parts with respect to 100 mass parts of thermosetting resins, and in another embodiment, a hardening | curing agent is 1-10 mass parts. It is preferable that content of a hardening accelerator is smaller than content of a hardening | curing agent, 0.001-1.5 mass parts of hardening accelerators are preferable, and 0.01-0.95 mass parts are more preferable with respect to 100 mass parts of thermosetting resins. By adjusting in the said range, progress of sufficient hardening reaction can be assisted. 0.001-1.5 mass parts is preferable with respect to 100 mass parts of thermosetting resins, and, as for content of a catalyst, 0.01-1.0 mass part is more preferable.

In addition, the adhesive bond layer 13 of this invention can mix | blend a filler suitably according to the use. Thereby, the improvement of the dicing property of the adhesive bond layer in an uncured state, the handleability improvement, the adjustment of melt viscosity, the provision of thixotropic property, the provision of the thermal conductivity in the adhesive bond layer of a hardened state, and the improvement of adhesive force It is possible to plan.

As a filler used by this invention, an inorganic filler is preferable. There is no restriction | limiting in particular as an inorganic filler, For example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica , Amorphous silica, antimony oxide and the like can be used. Moreover, these can also be used individually or in mixture of 2 or more types.

In addition, it is preferable to use alumina, aluminum nitride, boron nitride, crystalline silica, amorphous silica, etc. among the said inorganic fillers from a viewpoint of thermal conductivity improvement. In addition, in view of adjustment of melt viscosity and provision of thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica, amorphous silica, etc. It is preferable to use. Moreover, it is preferable to use alumina and a silica from a viewpoint of dicing improvement.

If the content rate of a filler is 30 mass% or more, it is excellent in the point of wire bonding property. At the time of wire bonding, it is preferable that the storage elastic modulus after hardening of the adhesive bond layer which adhere | attaches the wire | tip to be adjusted is adjusted to the range of 20-1000 Mpa at 170 degreeC, and it is an adhesive bond layer if the content rate of a filler is 30 mass% or more. It is easy to adjust the storage elastic modulus after hardening in this range. Moreover, when the content rate of a filler is 75 mass% or less, it is excellent in the film formability and the heating fluidity of the adhesive bond layer at the time of die bonding. When the heat fluidity of the adhesive bond layer at the time of die bonding improves, adhesiveness of an adhesive bond layer and a to-be-adhered body will become favorable, an adhesive force can be improved, and the unevenness | corrugation of a to-be-adhered body will be embedded, and it will become easy to suppress a void. More preferably, it is 70 mass% or less, More preferably, it is 60 mass% or less.

The adhesive bond layer of this invention can contain 2 or more types of fillers from which an average particle diameter differs as said filler. In this case, compared with the case where a single filler is used, in the raw material mixture before film formation, it becomes easy to prevent the viscosity increase when the filler content is high or the viscosity decrease when the filler content is low, resulting in good film formation. The property can be easily obtained, the fluidity of the uncured adhesive layer can be optimally controlled, and excellent adhesive strength can be easily obtained after curing of the adhesive layer.

Moreover, it is preferable that the average particle diameter of a filler is 2.0 micrometers or less, and, as for the adhesive bond layer of this invention, it is more preferable that it is 1.0 micrometer or less. When the average particle diameter of a filler is 2.0 micrometers or less, thinning of a film becomes easy. Here, a thin film suggests the thickness of 20 micrometers or less. Moreover, if it is 0.01 micrometer or more, dispersibility is favorable.

In addition, the average particle diameter is in the range of 0.1 to 1.0 μm from the viewpoint of preventing the viscosity increase or decrease of the raw material mixture before film formation, optimally controlling the fluidity of the uncured adhesive layer, and improving the adhesive strength after curing of the adhesive layer. It is preferable that the average particle diameter of the 1st filler and primary particle diameter in which is included contains the 2nd filler in the range of 0.005-0.03 micrometer. The first filler in which the average particle diameter is in the range of 0.1 to 1.0 mu m and 99% or more of particles are distributed in the range of particle size 0.1 to 1.0 mu m, and the average particle diameter of the primary particle diameter is in the range of 0.005 to 0.03 mu m and is 99. It is preferable that% or more of particle | grains contain the 2nd filler distributed in the range of particle size 0.005-0.1 micrometer.

The average particle diameter in this invention means the D50 value of the cumulative volume distribution curve which 50 volume% of particle | grains have a diameter smaller than this value. In this invention, an average particle diameter or D50 value is measured by the laser diffraction method, for example using Malvern Mastersizer 2000 by Malvern Instruments. In this technique, the size of the particles in the dispersion is measured using the diffraction of the laser beam, based on the application of either Fraunhofer or theoretic theory. In the present invention, by using the non-theoretic or modified non-theoretic for non-spherical particles, the average particle diameter or the D50 value relates to scattering measurement at 0.02 to 135 ° with respect to the incident laser beam.

In the present invention, in one aspect, a thermoplastic resin having a weight average molecular weight of 10 to 40 mass% of 5000 to 200,000 with respect to the entire pressure-sensitive adhesive composition constituting the adhesive layer 13, and a 10 to 40 mass% thermopolymerizable component; And 30-75 mass% fillers may be included. In this embodiment, 30-60 mass% may be sufficient as content of a filler, and 40-60 mass% may be sufficient as it. Moreover, 5000-150,000 may be sufficient as the mass mean molecular weight of a thermoplastic resin, and 10,000-100,000 may be sufficient as it.

In another aspect, the thermoplastic resin whose weight average molecular weights are 100,000-20 mass% with respect to the whole adhesive composition which comprises the adhesive bond layer 13, 200,000-2, 000,000, a 20-50 mass% thermopolymerizable component, and 30-75 mass You may also include% filler. In this embodiment, 30-60 mass% may be sufficient as content of a filler, and 30-50 mass% may be sufficient as it. The mass average molecular weight of the thermoplastic resin may be 200,000 to 1,000,000 or 200,000 to 800,000.

By adjusting the blending ratio, the storage elastic modulus and the fluidity of the adhesive layer 13 after curing can be optimized, and the heat resistance at high temperature tends to be sufficiently obtained.

In the tape 10 for semiconductor processing of this invention, the adhesive bond layer 13 may be formed by laminating what was filmed previously (henceforth an adhesive film) on the base film 11 directly or indirectly. . The temperature at the time of lamination is made into the range of 10-100 degreeC, and it is preferable to add the linear pressure of 0.01-10 N / m. In addition, the adhesive film 13 in which the adhesive bond layer 13 was formed on the release film may be sufficient as such an adhesive film, and in that case, may be peeled off after lamination, or it is used as a cover film of the tape 10 for semiconductor processing as it is. You may peel when joining a wafer.

Although the said adhesive film may be laminated | stacked on the whole surface of the adhesive layer 12, you may laminate | stack the adhesive film cut | disconnected (precut) to the adhesive layer 12 in the shape according to the wafer joined previously. Thus, when laminating | stacking the adhesive film which concerns on a wafer, as shown in FIG. 3, the adhesive bond layer 13 exists in the part to which the wafer W is bonded, and the adhesive bond layer 13 in the part to which the ring frame 20 is bonded. ) And only the adhesive layer 12 is present. In general, since the adhesive layer 13 is difficult to peel off from the adherend, the ring frame 20 can be bonded to the pressure-sensitive adhesive layer 12 by using a precut adhesive film, and at the time of peeling off the tape after use. The effect that the adhesive residue in the ring frame 20 hardly occurs is obtained.

<Use>

The tape 10 for a semiconductor process of this invention is used for the manufacturing method of the semiconductor device containing the expand process of dividing the adhesive bond layer 13 by at least expansion. Therefore, other processes, the order of the process, and the like are not particularly limited. For example, it can use suitably in the manufacturing methods (A)-(E) of the following semiconductor devices.

Manufacturing method of semiconductor device (A)

(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the wafer,

(c) bonding the adhesive film bonded to the pressure-sensitive adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated at 70 to 80 ° C;

(d) peeling off a surface protection tape from the wafer surface;

(e) irradiating a laser beam to a portion to be divided of the wafer to form a modified region by multiphoton absorption inside the wafer;

(f) expanding said tape for semiconductor processing to divide said wafer and said adhesive film along a dividing line to obtain a chip having a plurality of adhesive films;

(g) heating and shrinking the portion of the semiconductor processing tape that does not overlap with the chip to remove the loosening generated in the expand process to maintain the gap of the chip;

(h) a step of picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the semiconductor processing tape

Method for manufacturing a semiconductor device comprising a.

The manufacturing method of this semiconductor device is a method using stealth dicing.

Manufacturing method of semiconductor device (B)

(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the wafer,

(c) bonding the adhesive film bonded to the pressure-sensitive adhesive layer of the tape for semiconductor processing on the back surface of the wafer while the wafer is heated at 70 to 80 ° C;

(d) peeling off a surface protection tape from the wafer surface;

(e) irradiating a laser beam along the dividing line from the surface of the wafer and dividing it into individual chips;

(f) expanding the tape for semiconductor processing to divide the adhesive film corresponding to the chip to obtain a chip having a plurality of adhesive films;

(g) heating and shrinking the portion of the semiconductor processing tape that does not overlap with the chip to remove the loosening generated in the expand process to maintain the gap of the chip;

(h) a step of picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the semiconductor processing tape

Method for manufacturing a semiconductor device comprising a.

The manufacturing method of this semiconductor device is a method using full-cut laser dicing.

(C) Method of Manufacturing Semiconductor Device

(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the wafer,

(c) bonding the adhesive film bonded to the pressure-sensitive adhesive layer of the tape for semiconductor processing on the back surface of the wafer while the wafer is heated at 70 to 80 ° C;

(d) peeling off a surface protection tape from the wafer surface;

(e) cutting the wafer along a dividing line using a dicing blade to divide the wafer into individual chips;

(f) expanding the tape for semiconductor processing to divide the adhesive film corresponding to the chip to obtain a chip having a plurality of adhesive films;

(g) heating and shrinking the portion of the semiconductor processing tape that does not overlap with the chip to remove the loosening generated in the expand process to maintain the gap of the chip;

(h) a step of picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the semiconductor processing tape

Method for manufacturing a semiconductor device comprising a.

The manufacturing method of this semiconductor device is a method using full-cut blade dicing.

Manufacturing method of semiconductor device (D)

(a) cutting the wafer on which the circuit pattern is formed using a dicing blade along a dividing line predetermined line to a depth less than the thickness of the wafer;

(b) bonding a surface protection tape to the wafer surface;

(c) a backgrinding process for grinding the back surface of the wafer,

(d) bonding the adhesive film bonded to the pressure-sensitive adhesive layer of the tape for semiconductor processing on the back surface of the chip while the wafer is heated at 70 to 80 ° C;

(e) peeling the surface protection tape from the wafer surface;

(f) expanding the tape for semiconductor processing to divide the adhesive film corresponding to the chip to obtain a chip having a plurality of adhesive films;

(g) heating and shrinking the portion of the semiconductor processing tape that does not overlap with the chip to remove the loosening generated in the expand process to maintain the gap of the chip;

(h) a step of picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the semiconductor processing tape

Method for manufacturing a semiconductor device comprising a.

The manufacturing method of this semiconductor device is a method using half-cut blade dicing.

Manufacturing method of semiconductor device (E)

(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;

(b) irradiating a laser beam onto a portion to be divided of the wafer to form a modified region by multiphoton absorption in the wafer;

(c) a backgrinding process for grinding the back surface of the wafer,

(d) bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C;

(e) peeling the surface protection tape from the wafer surface;

(f) expanding the tape for semiconductor processing to divide the wafer and the adhesive layer along a dividing line to obtain a chip having a plurality of adhesive films;

(g) heating and shrinking the portion of the semiconductor processing tape that does not overlap with the chip to remove the loosening generated in the expand process to maintain the gap of the chip;

(h) a step of picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the tape for semiconductor processing;

Method for manufacturing a semiconductor device comprising a.

The manufacturing method of this semiconductor device is a method using stealth dicing.

<How to use>

The use method of the tape at the time of applying the tape 10 for a semiconductor process of this invention to the manufacturing method (A) of the said semiconductor device is demonstrated, referring FIGS. First, as shown in FIG. 2, the surface protection tape 14 for circuit pattern protection which contains an ultraviolet curable component in an adhesive is bonded to the surface of the wafer W in which the circuit pattern was formed, and the back surface of the wafer W is ground The backgrinding process is carried out.

After completion of the backgrinding process, as shown in FIG. 3, the wafer W was loaded on the heater table 25 of the wafer mounter with the surface side down, and then the tape 10 for semiconductor processing was formed on the back surface of the wafer W. Splice. The tape 10 for semiconductor processing used here is what laminated | stacked the adhesive film cut | disconnected in advance to the shape according to the wafer W to bond (precut), and the adhesive bond layer 13 was exposed in the surface joined with the wafer W. The adhesive layer 12 is exposed around the area. The portion where the adhesive layer 13 of the tape 10 for semiconductor processing is exposed and the back surface of the wafer W are bonded together, and the portion where the adhesive layer 12 around the adhesive layer 13 is exposed and the ring frame 20. ). At this time, the heater table 25 is set to 70-80 degreeC, and heat joining is performed by this. In addition, in this embodiment, the adhesive tape 15 containing the adhesive film 12 formed on the base film 11 and the base film 11, and the adhesive bond layer 13 formed on the adhesive layer 12 were carried out. Although the tape 10 for a semiconductor process to have was used, you may use an adhesive tape and a film adhesive, respectively. In this case, first, a film adhesive is bonded to the back surface of a wafer to form an adhesive layer, and the adhesive layer of an adhesive tape is bonded to this adhesive bond layer. At this time, the adhesive tape 15 which concerns on this invention is used as an adhesive tape.

Next, the wafer W to which the semiconductor processing tape 10 is bonded is taken out from the heater table 25, and as shown in FIG. 4, the semiconductor processing tape 10 side is faced down on the adsorption table 26. Next, as shown in FIG. Load on. And the ultraviolet-ray of 1000 mJ / cm <2> is irradiated to the base material surface side of the surface protection tape 14, for example using the energy ray light source 27 from the upper side of the wafer W adsorbed and fixed to the adsorption table 26, and the surface The adhesive force of the protective tape 14 to the wafer W is lowered, and the surface protection tape 14 is peeled off from the wafer W surface.

Next, as shown in FIG. 5, the laser beam is irradiated to the division plan part of the wafer W, and the modified region 32 by multiphoton absorption is formed in the inside of the wafer W. Next, as shown in FIG.

Next, as shown to Fig.6 (a), the stage of an expanded apparatus is used for the semiconductor processing tape 10 to which the wafer W and the ring frame 20 were bonded to the base film 11 side down. It loads on (21).

Next, as shown in FIG. 6B, in a state where the ring frame 20 is fixed, the hollow cylindrical pushing member 22 of the expander is raised to raise the tape 10 for semiconductor processing. Expand (expand). As expansion conditions, an expansion speed is 5 to 500 mm / sec, for example, and an amount of expansion (push amount) is 5 to 25 mm, for example. In this way, the tape 10 for semiconductor processing is stretched in the radial direction of the wafer W, so that the wafer W is divided into chips 34 in units of the modified region 32 as a starting point. At this time, in the part bonded to the back surface of the wafer W, the adhesive layer 13 suppresses the stretching (deformation) due to expansion and does not break, but the tension due to the expansion of the tape is concentrated at the positions between the chips 34. And breaks. Therefore, as shown in FIG. 6C, the adhesive layer 13 is also divided along with the wafer W. As shown in FIG. Thereby, the some chip | tip 34 with the adhesive bond layer 13 can be obtained.

Next, as shown in FIG. 7, the pushing-up member 22 is returned to the original position, the loosening of the tape 10 for a semiconductor process which arose in the previous expansion process is removed, and the chip | tip 34 of the chip | tip 34 is removed. The process for keeping a space stable is performed. In this step, for example, a warm air nozzle 29 is used for the region where the chip 34 exists in the tape 10 for semiconductor processing and the annular heat shrinkage region 28 between the ring frame 20. 40-120 degreeC warm air is blown out, the base film 11 is heat-shrunk, and the tape 10 for a semiconductor process is made taut. Thereafter, the pressure-sensitive adhesive layer 12 is subjected to an energy ray curing treatment, a thermosetting treatment, or the like to weaken the adhesive force to the adhesive layer 13 of the pressure-sensitive adhesive layer 12, and then picks up the chip 34.

In addition, although the tape 10 for semiconductor processing which concerns on this embodiment is comprised with the adhesive bond layer 13 on the adhesive layer 12, you may comprise without forming the adhesive bond layer 13. As shown in FIG. In this case, the wafer may be bonded to the pressure-sensitive adhesive layer 12 to be used to separate only the wafer, and at the time of use of the tape for semiconductor processing, the adhesive film produced in the same manner as the adhesive layer 13 may be used together with the wafer. You may bond on the layer 12 and divide a wafer and an adhesive film.

<Example>

Next, in order to make the effect of this invention clearer, an Example and a comparative example are demonstrated in detail, but this invention is not limited to these Examples.

[Production of tape for semiconductor processing]

(1) Production of base film

<Substrate film A>

Zinc ionomer of ethylene-methacrylic acid-ethyl methacrylate copolymer synthesized by the radical polymerization method (15% methacrylic acid content, 5% ethyl methacrylate, softening point 72 ° C, melting point 90 ° C, density 0.96 g / cm 3, The resin beads of 5 mass% of zinc ion content) were melted at 230 degreeC, and were shape | molded by the long film of 150 micrometers in thickness using an extruder. Subsequently, the base film A was produced by stretching the long film in the TD direction so as to have a thickness of 90 μm.

<Substrate film B>

A base film B was produced in the same manner as the base film A except that the long film had a thickness of 180 μm and the long film was stretched in the TD direction so as to have a thickness of 90 μm.

<Substrate film C>

The base film C was produced similarly to the base film A except having made the thickness of a long film into 215 micrometers, and extending | stretching this long film to TD direction so that it might become thickness 90 micrometers.

<Substrate film D>

Zinc ionomer (ethylene methacrylic acid content 11%, isobutyl methacrylate content 9%, softening point 64 ° C, melting point 83 ° C, density 0.95g /) of ethylene-methacrylic acid-isobutyl methacrylate copolymer synthesized by radical polymerization method Resin beads of cm <3> and 4 mass% of zinc ion content) were melted at 230 degreeC, and it shape | molded into the long film of 150 micrometers in thickness using an extruder. Subsequently, the base film D was produced by stretching the long film in the TD direction so as to have a thickness of 90 μm.

<Base film E>

The resin beads obtained by mixing the hydrogenated styrenic thermoplastic elastomer and the homopropylene (PP) at a compounding ratio of 52:48 were melted at 200 ° C and molded into an elongated film having a thickness of 150 µm using an extruder. Subsequently, the base film E was produced by stretching the long film in the TD direction so as to have a thickness of 90 μm.

<Base film F>

The resin beads obtained by mixing the hydrogenated styrenic thermoplastic elastomer and the homopropylene (PP) at a compounding ratio of 64:36 were melted at 200 ° C and molded into an elongated film having a thickness of 150 µm using an extruder. Thereafter, the base film F was produced by stretching the long film in the TD direction so as to have a thickness of 90 μm.

<Base film G>

The base film G was produced like the base film A except having made the thickness of a long film 150 micrometers, and extending | stretching this long film in MD direction so that it might become thickness 90 micrometers.

<Substrate film H>

The base film H was produced like the base film D except having made the thickness of a long film 150 micrometers, and extending | stretching this long film in MD direction so that it might become thickness 90 micrometers.

<Base film I>

The base film I was produced like the base film A except the thickness of the long film being 90 micrometers, and the long film not being stretched.

<Base film J>

The base film J was produced similarly to the base film D except having made the thickness of a long film into 90 micrometers, and did not carry out the stretching process of this long film.

<Base film K>

The base film K was produced like the base film E except having made the thickness of a long film into 90 micrometers, and did not carry out the stretching process of this long film.

<Base film L>

A base film L was produced in the same manner as the base film F except that the thickness of the long film was 90 μm and the stretching treatment of the long film was not performed.

<Base film M>

The base film M was produced similarly to the base film A except having made the thickness of a long film into 110 micrometers, and stretched the said long film to TD direction so that it might become 90 micrometers in thickness.

<Substrate film N>

A base film N was produced in the same manner as the base film A except that the thickness of the long film was 120 μm, and the long film was stretched in the TD direction so as to have a thickness of 90 μm.

(2) Preparation of Acrylic Copolymer

As an acrylic copolymer (A1) which has a functional group, 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate, and methacrylic acid are included, and the ratio of 2-ethylhexyl acrylate is 60 mol%, the mass average molecular weight 70 A bay copolymer was prepared. Next, 2-isocyanatoethyl methacrylate was added so that an iodine value might be 25, and the acrylic copolymer of glass transition temperature-50 degreeC, a hydroxyl value of 10 mgKOH / g, and an acid value of 5 mgKOH / g was prepared.

(3) Preparation of Adhesive Composition

Epoxy resin `` 1002 '' (manufactured by Mitsubishi Chemical Corporation, solid bisphenol A type epoxy resin, epoxy equivalent 600) 40 parts by mass, epoxy resin `` 806 '' (trademark made by Mitsubishi Chemical Corporation, bisphenol F type epoxy resin, 100 parts by weight of epoxy equivalent 160, specific gravity 1.20), 5 parts by mass of a curing agent "Dyhard100SF" (trade name, manufactured by Degussa, Dicyandiamide), a silica filler "SO-C2" (trade name, product made by Admafine Co., Ltd., 0.5 µm in average diameter) ) MEK was added to the composition containing 200 mass parts and 3 mass parts of "Aerosil R972" which is a silica filler (The brand made by Nippon Aerosil Co., Ltd., the average particle diameter of a primary particle diameter), and stirred and mixed, It was set as a uniform composition.

As a phenoxy resin "PKHH" (brand name made by INCHEM, a mass mean molecular weight 52,000, glass transition temperature 92 degreeC) 100 mass parts, a coupling agent, "KBM-802" (brand name made by Shin-Etsu Silicone Co., Ltd., mercaptopropyl tree) Methoxysilane) 0.6 parts by mass and "curesol 2PHZ-PW" as a curing accelerator (trade name, 2-phenyl-4,5-dihydroxymethylimidazole, Shikoku Kasei Co., Ltd., decomposition temperature 230 ° C) 0.5 mass part was added and stirred and mixed until it became uniform. Furthermore, the varnish of the adhesive composition was obtained by filtering this with a 100 mesh filter and vacuum degassing.

<Example 1>

5 parts by mass of coronate L (manufactured by Nippon Polyurethane) was added as polyisocyanate to 100 parts by mass of the acrylic copolymer described above, and a mixture of 3 parts by mass of Esacure KIP 150 (manufactured by Lamberti) as a photopolymerization initiator was added. It dissolved in ethyl and stirred to prepare an adhesive composition.

Next, this adhesive composition is coated on the release liner containing the polyethylene-terephthalate film which carried out the mold release process so that thickness after drying might be set to 10 micrometers, and it dried at 110 degreeC for 3 minutes, and then bonded with a base film, and a base film The adhesive sheet in which the adhesive layer was formed was produced.

Next, the above-mentioned adhesive composition is coated to the release liner containing the polyethylene-terephthalate film which carried out the mold release process so that the thickness after drying may be set to 20 micrometers, it is dried at 110 degreeC for 5 minutes, and an adhesive bond layer is formed on a release liner. The formed adhesive film was produced.

The adhesive sheet was cut into the shape shown in Fig. 3 and the like which can be bonded to the ring frame so as to cover the opening. In addition, the adhesive film was cut out to the shape shown in FIG. 3 etc. which can cover the wafer back surface. And the adhesive layer side of the said adhesive sheet and the adhesive bond layer side of the said adhesive film were bonded so that the part which the adhesive layer 12 is exposed may be formed around the adhesive film as shown in FIG. 3 etc., and the tape for a semiconductor process was produced. .

<Examples 2 to 8, Comparative Examples 1 to 6>

The tape for semiconductor processing which concerns on Examples 2-8 and Comparative Examples 1-6 was produced by the method similar to Example 1 except having used the base film of Table 1.

About the adhesive tape of the tape for a semiconductor processing which concerns on an Example and a comparative example, it cut | disconnected so that it might become length 24mm (direction of measuring a strain amount), width 5mm (direction orthogonal to the direction of measuring a strain amount), and it was set as the sample piece. . Using the thermomechanical characteristic tester (manufactured by Rigaku Co., Ltd., trade name: TMA8310), the obtained sample piece was subjected to deformation by temperature in two directions of MD and TD under the following measurement conditions by the tensile load method. Measured.

(Measuring conditions)

Measurement temperature: -60 to 100 ℃

Temperature rise rate: 5 ℃ / min

Measuring load: 19.6mN

Atmosphere gas: nitrogen atmosphere (100ml / min)

Sampling: 0.5s

Interchuck distance: 20㎜

And the thermal strain was computed by following formula (1), the differential value of the thermal strain in every 1 degreeC between 40 degreeC and 80 degreeC of each of MD direction and TD direction was calculated | required, and the sum was computed. The results are shown in Table 1 and Table 2.

[Evaluation of chip recognition miss]

By the method shown below, about each tape for semiconductor processing of the said Example and the said comparative example, the wafer was divided into chips and the chip recognition miss was evaluated.

(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;

(b) irradiating a laser beam onto a portion to be divided of the wafer to form a modified region by multiphoton absorption in the wafer;

(c) a backgrinding process for grinding the back surface of the wafer,

(d) bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C;

(e) peeling the surface protection tape from the wafer surface;

(f) expanding the tape for semiconductor processing to divide the wafer and the adhesive layer along a dividing line to obtain a chip having a plurality of adhesive films;

(g) by heating and shrinking the portion of the semiconductor processing tape which does not overlap with the chip (the region where the chip is present and the annular region between the ring frame), thereby removing the relaxation caused in the expansion process of (f), Maintaining the gap of the chip;

(h) The process of picking up the said chip | tip with the said adhesive bond layer from the adhesive layer of the tape for a semiconductor process was implemented.

In the step (d), the wafer was bonded to the tape for semiconductor processing so that the dividing line of the wafer was along the MD direction and the TD direction of the base film.

In the step (f), the dicing ring frame bonded to the semiconductor processing tape is pressed down by the expand ring of DDS2300 manufactured by Disco Co., Ltd. in DDS2300 manufactured by Disco Co., Ltd. The expansion was performed by pressing a portion which does not overlap the wafer with a circular pushing member. (f) As conditions of a process, the amount of expansion was adjusted so that it might become an expand speed of 300 mm / sec and an expand height of 10 mm. Here, the amount of expansion refers to the amount of change in the relative position of the ring frame and the pushing-up member before and after pressing. The chip size was set to 1 × 1 mm square.

(g) Process expanded again on the conditions of the expansion speed of 1 mm / sec and the expansion height of 10 mm at normal temperature, and then performed heat shrink processing on the following conditions.

[Condition 1]

Heater set temperature: 220 ℃

Thermal flow rate: 40L / min

Distance between heater and semiconductor processing tape: 20 mm

Heater rotation speed: 7 ° / sec

[Condition 2]

Heater set temperature: 220 ℃

Thermal flow rate: 40L / min

Distance between heater and semiconductor processing tape: 20 mm

Heater rotation speed: 5 ° / sec

With respect to the tapes for semiconductor processing of Examples 1-8 and Comparative Examples 1-6, after picking-up (g), the chip | tip cannot be recognized correctly because a boundary with an adjacent chip | tip cannot be discriminated, and a chip | tip cannot be recognized. The frequency of occurrence was evaluated as a chip recognition miss that could not be picked up. In both of condition 1 and condition 2 of the above-mentioned step (g), the occurrence frequency of chip recognition miss is 0% as a good product, and in condition 2, the frequency of occurrence of chip recognition miss is less than 1%. In the condition 2, the frequency of occurrence of the chip recognition miss is 1% or more and less than 3%. As the defective product, the occurrence frequency of the chip recognition miss is 3% or more in both the condition 1 and condition 2 as the defective product. Evaluated as. The results are shown in Table 1 and Table 2. In addition, at the time of evaluation, as shown in FIG. 8, the defect in the MD direction of an adhesive tape is similarly performed around the chip | tip 50a of the shortest right side in FIG. 8 without the defect in the MD direction of an adhesive tape. In FIG. 8, 100 chips each around the left shortest chip 50b, around the chip 51 at the center, and around the chip 51 at the center without defects in the TD direction of the adhesive tape. Was picked up and evaluated.

As shown in Table 1, the tape for semiconductor processing which concerns on Examples 1-8 heats every 1 degreeC between 40 degreeC and 80 degreeC measured at the time of temperature rising by the thermomechanical characteristic tester in MD direction of an adhesive tape. Since the sum of the average value of the derivatives of the strain and the average value of the derivatives of the thermal strain at 1 ° C. between 40 ° C. and 80 ° C. measured at the time of temperature increase by the thermomechanical characteristic tester in the TD direction is a negative value, It is easy to discriminate the boundary with the adjacent chip, and the occurrence frequency of chip recognition miss in image recognition at the time of pick-up was low, and the result was favorable.

On the other hand, as shown in Table 2, the tape for semiconductor processing which concerns on Comparative Examples 1-6 is every 1 degreeC between 40 degreeC and 80 degreeC measured at the time of temperature rising by the thermomechanical characteristic tester in MD direction of an adhesive tape. The sum of the average value of the differential value of the thermal strain and the average value of the differential value of the thermal strain at 1 ° C. between 40 ° C. and 80 ° C. measured at the time of temperature increase by the thermomechanical characteristic tester in the TD direction is a negative value. Since this is not the case, the frequency of occurrence of chip recognition miss is high.

10: tape for semiconductor processing
11: base film
12: pressure-sensitive adhesive layer
13: adhesive layer
22: lifting member
28: heat shrink zone
29: hot air nozzle

Claims (3)

It has a base film and the adhesive tape which has an adhesive layer formed in at least one surface side of the said base film,
The said adhesive tape is an average value of the differential value of the thermal strain in every 1 degreeC between 40 degreeC and 80 degreeC measured at the time of temperature rising by the thermomechanical property tester in MD direction, and the thermomechanical property tester in a TD direction. The sum of the average value of the differential value of the thermal strain rate for every 1 degreeC between 40 degreeC and 80 degreeC measured at the time of temperature rising is negative value, The tape for a semiconductor process characterized by the above-mentioned. The method of claim 1,
The adhesive bond layer is laminated | stacked on the said adhesive layer side, The tape for a semiconductor process characterized by the above-mentioned. The method according to claim 1 or 2,
A tape for semiconductor processing, which is used for full and half cut blade dicing, laser dicing, or stealth dicing by laser.

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