BR112019019520B1 - semiconductor processing tape - Google Patents

Abstract

A semiconductor processing tape is provided that can be retracted by sufficiently heating in a short period of time and can retain a cut width. A semiconductor processing tape 10 of the invention includes a temporary adhesive tape 15 having a substrate film 11; and a temporary adhesive layer 12 formed on at least one side of the substrate film surface 11, in which in relation to the temporary adhesive tape 15, the sum of the average value of the differential value of the thermal deformation rate in the MD direction by 1 ° C between 40 ° C and 80 ° C measured at the time of increasing the temperature using a thermomechanical testing machine, and the average value of the differential value of the thermal deformation rate in the TD direction by 1 ° C between 40 ° C and 80 ° C measured at the time of increasing the temperature using a thermomechanical testing machine, is a negative value.

Description

TECHNICAL FIELD

[001] The present invention relates to an expandable tape for semiconductor processing, which can be used to fix a chip in a cutting process by dividing a chip into fragment-like elements, which can also be used in a process bonding or assembly process for bonding a fragment and another fragment or a fragment and a substrate after cutting, and which can also be used in a process of dividing an adhesive layer along the fragments by expansion.

TECHNICAL STATUS

[002] Conventionally, in a process of producing a semiconductor device, such as an integrated circuit (IC), a subsequent grinding process of grinding the back surface of a wafer to reduce the wafer thickness after the formation of a circuit pattern ; a process of cutting the adhesion of a tape for semiconductor processing having temporary adhesion and elasticity to the back surface of the insert, and then dividing the insert into fragment units; an expansion process of expanding the tape for semiconductor processing (expansion); a collection process to collect the divided fragments; and a mold bonding (assembly) process of adhering the collected fragments to a connector support, a packaging substrate or the like (or in a stacked package, the fragments are laminated on top of each other and adhered), are carried out.

[003] In the subsequent crushing process, a surface protective tape is used to protect the surface formed by the circuit pattern of a tablet (front surface of the tablet) from contamination. Upon completion of crushing the back surface of the insert, when this surface protective tape is detached from the front surface of the insert, the semiconductor processing tape (mold / cut bonding tape) that will be described below is laminated to the back surface of the insert. insert and then the tape for the semiconductor processing side is attached to a suction table. The surface protective tape is subjected to a treatment to lower the adhesive force directed to the insert, and then the surface protective tape is detached. The insert from which the surface protective tape has been detached is removed from the suction table in a state with the insert laminated to the rear surface, and is provided for the subsequent cutting process. Meanwhile, the treatment to decrease the adhesive strength is an irradiation treatment with energy rays in a case where the surface protective tape is formed by a component that is curable by energy rays, such as ultraviolet radiation, and the treatment is a heat treatment in a case, in which the surface protective tape is formed from a thermosetting component.

[004] In the cutting process for the assembly process after the subsequent grinding process, a semiconductor processing tape is used, in which a temporary adhesive layer and an adhesive layer are laminated in this order on a substrate film. Generally, in a case, where a semiconductor processing tape is used, first, the adhesive layer of the semiconductor processing tape is laminated to the back surface of a wafer to secure the wafer, and the wafer and the wafer layer they are cut into fragment units using a cutting blade. After that, an expansion process of expanding the distance between the fragments by expanding the tape in the direction of the insert diameter is carried out. This expansion process is carried out in order to increase the ability to recognize fragments by a CCD camera or similar in the subsequent collection process, and to avoid the damage of fragments caused by adjacent fragments being brought into contact with each other when the fragments are collected. Subsequently, the fragments are detached, together with the adhesive layer, from the temporary adhesive layer and are then collected during the collection process, and the fragments are directly adhered to a connector support, a packaging substrate, or similar during the assembly process. As such, when a semiconductor processing tape is used, it is possible to adhere the fragments attached to the adhesive layer directly to a connector support, a packaging substrate or the like. Therefore, a process for applying an adhesive or a process for separately adhering a mold bonding film to various fragments can be omitted.

[005] However, in the cutting process described above, as described above, since the insert and the adhesive layer are cut together using a cutting blade, not only the chip chips are generated, but also the chip chips. adhesive layer. So, in one case, where the trim of the adhesive layer obstructs the cut grooves of the insert, the fragments stick together, causing the collection failure or something similar, and there is a problem that the production performance of the semiconductor devices is decreased.

[006] In order to solve this problem, a method of cutting only the insert using a blade in the cutting process has been proposed, expanding the tape for semiconductor processing in the expansion process and thus dividing the adhesive layer for each one of individual fragments (for example, Patent Document 1). According to such a method for dividing the adhesive layer using the tension at the time of expansion, the adhesive chips are not generated, and there is no adverse influence on the uptake process.

[007] In addition, in recent years, a method called stealth dicing, by which a insert can be cut in a non-contact manner using a laser processing device, has been suggested as a method of insert cutting. For example, Patent Document 2 discloses, as an invisible cutting method, a method for cutting a semiconductor substrate, the method including a step of irradiating a semiconductor substrate, on which a sheet has been adhered through an adhesive layer ( layer of resin attached to the mold) interposed with laser light, adjusting the focused light into the semiconductor substrate, thus forming regions modified by absorbing multiple photons inside the semiconductor substrate, and using these modified regions as parts planned cuts; and a step of cutting the semiconductor substrate and the adhesive layer along the planned cut parts, expanding the sheet.

[008] In addition, as another method for cutting a tablet using a laser processing apparatus, for example, proposed in Patent Document 3 is a method of dividing a tablet, the method including a step of assembling an adhesive layer (film adhesive) for the mold bonding on the back surface of a tablet; a step of laminating a temporary protective adhesive tape expandable on the side of the adhesive layer of the tablet, in which the adhesive layer has been laminated; a step of irradiating the temporary adhesive strip of protective adhesive tape with laser light across the surface of the tablet along the way and thereby dividing the tablet into individual fragments; a step of expanding the temporary protective adhesive tape to apply elastic force to the adhesive layer and to break the adhesive layer for each of the fragments; and a step of detaching the fragments having the broken adhesive layer laminated on it, from the temporary protective adhesive tape.

[009] According to these insert cutting methods described in Patent Document 2 and Patent Document 3, since a insert is cut in a non-contact manner by irradiation with laser light and expansion of a tape, the physical load on the insert is small, and insert cutting is enabled without generating insert chips (fragments), as in the case of cutting the blade of the recent main chain. In addition, since the adhesive layer is divided by the expansion of the adhesive layer, there is no possibility of generating chips from the adhesive layer. Therefore, attention has been paid to these methods as an excellent technology that can replace the cutting of the blade.

[0010] However, in the methods of dividing an adhesive layer to expand through expansion, as described in Patent Documents 1 to 3, in the case of using a conventional semiconductor processing tape, there is a problem that together with a increase in the amount of expansion, the portion pushed upwards by an expansion ring is elongated, and after the expansion is undone, the relevant portion becomes loose so that the distance between the chips (hereinafter, "cutting width") it cannot be withheld.

[0011] Thus, methods of dividing the adhesive layer by expansion, undoing the expansion, causing the slack portions of the semiconductor processing tape to retract by heat and thus maintaining the cut width, have been suggested (for example , Patent Documents 4 and 5).

CITATION LIST PATENT DOCUMENT

[0012] Patent Document 1: JP 2007-5530 A

[0013] Patent Document 2: JP 2003-338467 A

[0014] Patent Document 3: JP 2004-273895 A

[0015] Patent document 4: WO 2016/152957 A

[0016] Patent Document 5: JP 2015-211081 A

SUMMARY OF THE INVENTION PROBLEM TO BE SOLVED BY THE INVENTION

[0017] However, in relation to a method of inducing slack in a tape for expansion-induced semiconductor processing to retract by heating, generally, a method of inducing a pair of hot air nozzles to orbit around the shaped portion of ring that was pushed by an expansion ring and yielded, thus exposing the slack portion to hot air, and by retracting the slack portion by heat, has been used.

[0018] In the semiconductor processing tape described in Patent Document 4, when the tape is heated for 10 seconds at 100 ° C, the thermal shrinkage in the longitudinal direction and in the direction of the tape width is 0% to 20%. However, in a case in which heating is performed by causing hot air nozzles to orbit around, the temperature near the surface of the semiconductor processing tape increases slowly. Therefore, there is a problem that takes a long time to eliminate the gap in all locations of the annular shape. In addition, when the cutting width is narrow, it is difficult to distinguish the boundary lines with the adjacent fragments, and fragment recognition error occurs during image recognition at the time of collection. Thus, there is a problem that the product yield of the semiconductor component production process is deteriorated.

[0019] In addition, the semiconductor processing tape, described in Patent Document 5, has a shrinkage rate of 0.1% or greater at 130 ° C to 160 ° C (see claim 1 of Patent Document 5) , and the temperature inducing the retraction is high. Therefore, in the event of heat shrinkage using hot air, a high temperature and long heating time are required, and there is a risk that the hot air may have an influence even on the adhesive layer in the vicinity of the outer periphery of the insert, and the split adhesive layer can be fused and fused again. In addition, when the cut width is narrow, it is difficult to distinguish the boundary lines with adjacent fragments, and fragment recognition error occurs during image recognition at the time of collection. Thus, there is a problem that the product yield of the semiconductor component production process is deteriorated.

[0020] Thus, it is an objective of the invention to provide a tape for the processing of semiconductors, which can be retracted by sufficient heating in a short period of time, and can retain a sufficient cutting width insofar as the boundaries with the fragments adjacent areas can be easily distinguished, and the error in recognizing fragments during image recognition at the time of collection can be eliminated.

MEANS TO SOLVE PROBLEMS

[0021] In order to solve the problems described above, the semiconductor processing tape, according to the invention, comprises a temporary adhesive tape having a substrate film; and a temporary adhesive layer formed on at least one side of the substrate film surface, in which, in relation to the temporary adhesive tape, the sum of the average value of the differential value of the thermal deformation rate in the MD direction per 1 ° C between 40 ° C and 80 ° C measured at the time of temperature increase using a thermomechanical testing machine, and the average value of the differential value of the thermal deformation rate in the TD direction by 1 ° C between 40 ° C and 80 ° C measured at the time of temperature increase by means of a thermomechanical testing machine, it is a negative value.

[0022] It is preferable that the semiconductor processing tape has an adhesive layer and a laminated release film in this order on the side of the temporary adhesive layer.

[0023] In addition, it is preferable that the semiconductor processing tape is used for cutting full and half-cut blades, full-cut laser cutting or invisible laser-induced cutting.

EFFECT OF THE INVENTION

[0024] When the semiconductor processing tape according to the invention is used, the semiconductor processing tape can be retracted by sufficient heating in a short period of time, and the tape can retain sufficient cutting width in the insofar as the boundaries with adjacent fragments can be easily distinguished, and the error in recognizing fragments during image recognition at the time of collection can be eliminated.

BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Fig. 1 is a cross-sectional view schematically illustrating the structure of a semiconductor processing tape according to an embodiment of the invention;

[0026] Fig. 2 is a cross-sectional view illustrating the state in which a surface protective tape is laminated to a tablet;

[0027] Fig. 3 is a cross-sectional view to describe a process of laminating a wafer and a ring structure to the tape for semiconductor processing, according to an embodiment of the invention;

[0028] Fig. 4 is a cross-sectional view to describe a process of detaching a protective tape from the surface of a tablet's surface;

[0029] Fig. 5 is a cross-sectional view illustrating a state, in which a modified region is formed into a tablet by laser processing;

[0030] Fig. 6 (a) is a cross-sectional view illustrating a state, in which the semiconductor processing tape, according to an embodiment of the invention, is mounted on an expansion apparatus;

[0031] AFig. 6 (b) is a cross-sectional view illustrating an operation of dividing a chip into fragments and expanding the semiconductor processing tape; and Fig.6 (c) is a cross-sectional view illustrating the semiconductor processing tape, an adhesive layer and fragments after expansion;

[0032] Fig. 7 is a cross-sectional view to describe a process of heat shrinkage;

[0033] Fig. 8 is an explanatory diagram that illustrates the location of the cut width measurement for an evaluation of Examples and Comparative Examples; and

[0034] Fig. 9 is an example of the measurement results for the thermal deformation rate.

MODE (S) FOR CARRYING OUT THE INVENTION

[0035] The modalities of the invention will be described in detail below.

[0036] Fig. 1 is a cross-sectional view illustrating a tape for processing semiconductors 10 according to an embodiment of the invention. The semiconductor processing tape 10 of the invention is intended to be such that, when a chip is divided into fragments by expansion, an adhesive layer 13 is divided along with the fragments. This semiconductor processing tape 10 includes a temporary adhesive tape 15 composed of a substrate film 11 and a temporary adhesive layer 12 provided on the substrate film 11; and an adhesive layer 13 provided in the temporary adhesive layer 12, and the back surface of a tablet is laminated over the adhesive layer 13. The respective layers can be cut in advance in a predetermined (pre-cut) shape according to the process or apparatus used . In addition, the semiconductor processing tape 10 of the invention can be in the form, in which the tape has been cut for each sheet of insert, or it can be in the form, in which a long sheet formed by a plurality of parts of the tape which has been cut for each sheet of pellet, it is rolled into a roll form. In the following description, the settings for the various layers will be described.

<Substrate film>

[0037] When the substrate film 11 has uniform and isotropic expandability, it is preferable from the point of view that the insert can be cut without tilting in any direction during the expansion process and the material for the substrate film 11 is not particularly , limited. Generally, crosslinked resins have a high restorative strength against drag compared to non-crosslinked resins, and have a high shrinkage stress when heat is applied to the resins in a stretched state after the expansion process. Therefore, the crosslinked resins are excellent from the point of view of eliminating the slack produced in the tape after the expansion process, through heating and retraction, and applying tension to the tape, thus maintaining the distances (cutting widths) in a stable manner. between the individual fragments. Among the crosslinked resins, the thermoplastic crosslinked resins are more preferably used. On the other hand, non-crosslinked resins have a low restorative strength against drag compared to crosslinked resins. Therefore, after the expansion process in a low temperature region, such as a range of -15 ° C to 0 ° C, when the tape is relaxed and returns to normal temperature, it is directed to a collection process and an assembly process , the tape does not retract easily. Therefore, it is excellent from the point of view that the adhesive layers adhered to the fragments can be prevented from coming into contact with each other. Among the non-crosslinked resins, the non-crosslinked resins based on olefins are more preferably used.

[0038] An example of such a thermoplastic crosslinked resin is an ionomeric resin obtained by crosslinking, for example, a binary copolymer of ethylene (meth) acrylic acid or a ternary copolymer containing ethylene (meth) acrylic acid-alkyl ester of (meth) acrylic as constituent components of the main polymer, with a metallic ion. Such an ionomer resin is suitable for the expansion process in terms of uniform expandability, and is particularly suitable from the point of view that the restorative force works strongly at the time of heating due to crosslinking. The metal ion that must be included in the ionomer resin is not particularly limited; however, examples of this include zinc and sodium. The zinc ion is less susceptible to elution, and is preferable from the point of view of low contamination. In the alkyl ester of the (meth) acrylic acid of the ternary copolymer, an alkyl group having 1 to 4 carbon atoms is preferable from the point of view of having a high elastic modulus and being able to propagate great strength to the tablet. Examples of such alkyl esters of (meth) acrylic acid include methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, methyl acrylate, ethyl acrylate, propyl acrylate and butyl acrylate.

[0039] In addition, with regard to thermoplastic crosslinked resin, in addition to ionomeric resins, a product obtained by crosslinking a resin selected from a low density polyethylene having a specific weight of 0.910 or greater and less than 0.930, a polyethylene of ultra-low density having a specific weight of less than 0.910 and other ethylene-vinyl acetate copolymers, by irradiating the resin with energy rays, such as an electron beam, is also suitable. Since such a thermoplastic crosslinked resin has crosslinked and non-crosslinked sites coexisting in the resin, the thermoplastic crosslinked resin has a certain uniform expandability. In addition, as the restorative force works strongly at the time of heating, a thermoplastic crosslinked resin is also suitable for eliminating the slack in the tape caused by the expansion process. In addition, since thermoplastic crosslinked resins are unlikely to contain chlorine in the molecular chain composition, even if the tapes that became unnecessary after use are incinerated, thermoplastic crosslinked resins do not generate chlorinated aromatic hydrocarbons, such as dioxin and its analogs, and therefore, resins impose less burden on the environment. When the amount of energy rays to be irradiated to the polyethylene or ethylene vinyl acetate copolymer is appropriately regulated, a resin having sufficiently uniform expandability can be obtained.

[0040] In addition, an example of the non-crosslinked resin can be a mixed resin composition of, for example, polypropylene and a styrene-butadiene copolymer.

[0041] Regarding polypropylene, for example, a propylene homopolymer or a propylene-ethylene copolymer of the block type or of the random type, can be used. A propylene-ethylene copolymer of the random type has low rigidity and is preferable. When the percentage content of an ethylene constituent unit in the propylene-ethylene copolymer is 0.1% by weight or more, the propylene-ethylene copolymer is excellent from the point of view of the stiffness of a resulting tape and from the point of view of that the compatibility between the resins in the mixed resin composition is high. When a tape is said to have adequate stiffness, the cutting ability of the insert is increased and, in a case where the resins have high compatibility, the amount of the extruded mixed resin composition is easily stabilized. The percentage content is more preferably 1% by weight or more. In addition, when the percentage content of an ethylene constituent unit in the propylene-ethylene copolymer is 7% by weight or less, it is excellent from the point of view that the polypropylene is stabilized and is easily polymerized. The percentage content is more preferably 5% by weight or less.

[0042] In relation to the styrene-butadiene copolymer, a hydrogenated styrene-butadiene copolymer can be used. When a styrene-butadiene copolymer is hydrogenated, the styrene-butadiene copolymer has satisfactory compatibility with propylene, and embrittlement and discoloration, caused by the oxidative deterioration attributed to the double bonds in butadiene, can be avoided. In addition, when the percentage content of a styrene constituent unit in the styrene-butadiene copolymer is 5% by weight or more, it is preferable from the point of view that the styrene-butadiene copolymer is stabilized and is easily polymerized. In addition, when the percentage content is 40% by weight or less, the styrene-butadiene copolymer is flexible and is excellent in terms of expandability. The percentage content is, more preferably, 25% by weight or less, and even more preferably, 15% by weight or less. Regarding the styrene-butadiene copolymer, a block-type copolymer and a random-type copolymer can be used. A random type copolymer is preferable because the styrene phase is uniformly dispersed, the excessive increase in stiffness can be suppressed and the expandability is increased.

[0043] When the percentage of polypropylene content in the mixed resin composition is 30% by weight or more, it is excellent from the point of view that the irregularity of the substrate film thickness can be suppressed. When the thickness is uniform, the expandability is likely to become isotropic. In addition, the stress-relaxing properties of the substrate film become excessively strong, and it can be easily prevented that the distance between the fragments becomes shorter over time, and that the adhesive layers come into contact with each other. and be merged again. The percentage content is, more preferably, 50% by weight or more. In addition, when the percentage of polypropylene content is 90% by weight or less, the stiffness of the substrate film can be easily adjusted, as appropriate. If the stiffness of the substrate film becomes too high, the force required to expand the substrate film will increase. Consequently, the load of the apparatus is increased, and there are times when sufficient expansion for the division of the tablet or adhesive layer 13 may not be achieved. Therefore, it is important to adjust the stiffness properly. The lower limit of the percentage content of the styrene-butadiene copolymer in the mixed resin composition is preferably 10% by weight or more, and it is easy to adjust the stiffness of the substrate film to an appropriate level for the apparatus. When the upper limit is 70% by weight or less, it is excellent from the point of view that the thickness irregularity can be suppressed, and the upper limit is, more preferably, 50% by weight or less.

[0044] However, in the example illustrated in Fig. 1, the substrate film 11 is a single layer; however, the invention is not limited to this, and the substrate film can have a multilayer structure obtained by laminating two or more types of resins, or two or more layers of a single type of resin can be laminated. With respect to the two or more types of resins, it is preferable that the resins are coherently crosslinkable or non-crosslinkable, from the point of view that the characteristics of the respective resins are displayed in an improved way. When resins are laminated in a combination of crosslinkable and non-crosslinkable resins, it is preferable from the point of view that the defects of the respective resins are made up for each other. The thickness of the substrate film 11 is not particularly defined; however, it is desirable for the substrate film to have a strength that is just sufficient to be easily stretched and remain unbroken during the expansion process of the semiconductor processing tape 10. For example, it is desirable for the thickness to be about 50μm to 300μm, and the thickness is, more preferably, from 70μm to 200μm.

[0045] Regarding the method for producing a multilayer film of substrate 11, an extrusion method, a lamination method and the like, which are conventionally known, can be used. In the case of using a lamination method, an adhesive can be interposed between the layers. Regarding the adhesive, any conventionally known adhesive can be used.

<Temporary adhesive layer>

[0046] The temporary adhesive layer 12 can be formed by applying a temporary adhesive composition to the substrate film 11. It is desirable that the temporary adhesive layer 12, which constitutes the semiconductor processing tape 10 of the invention, does not cause the adhesive layer to come off. 13 at the moment of cutting and which has retention properties insofar as defects, such as the passage of fragments, do not occur, or have characteristics in which the detachment of adhesive layer 13 becomes easy at the time of collection.

[0047] In relation to the semiconductor processing tape 10 of the invention, the configuration of the temporary adhesive composition that constitutes the temporary adhesive layer 12 is not particularly limited. However, in order to improve the collection performance after cutting, an energy-curable temporary adhesive composition is preferable, and a material that can be easily detached from adhesive layer 13 after curing is preferred. According to one embodiment, a temporary adhesive composition including 60 mol% or more than one (meth) acrylate having an alkyl chain having 6 to 12 carbon atoms as a basic resin, and also including a polymer (A) having a bond double carbon-carbon curable by energy rays having an iodine value of 5 to 30, can be mentioned as an example. Here, energy rays mean rays of light, like ultraviolet radiation, or ionizing radiation, like an electron beam.

[0048] In relation to such a polymer (A), when the amount of introduction of the energy-curable carbon-carbon double bonds is 5 or more as an iodine value, it is excellent from the point of view that the effect of reducing the temporary adhesive strength after irradiation with energy rays is increased. The iodine value is, more preferably, 10 or more. In addition, when the amount of introduction as an iodine value is 30 or less, it is excellent from the point of view that the superior fragment retention energy is displayed until the fragment collection after irradiation with energy rays, and is it is easy to widen the gaps between fragments at the time of expansion just before the collection process. When the gaps between the fragments can be sufficiently widened before the collection process, it is preferable because the image recognition of each fragment at the time of collection is facilitated, or it is easier to collect the fragments. In addition, when the amount of introduction of the carbon-carbon double bonds is 5 to 30 as an iodine value, it is preferable because the polymer (A) is stable and its production is facilitated.

[0049] In addition, when the polymer (A) has a glass transition temperature of -70 ° C or higher, it is excellent from the standpoint of heat resistance against heat associated with irradiation with energy rays, and the temperature glass transition is more preferably -66 ° C or higher. In addition, when the glass transition temperature is 15 ° C or below, it is excellent from the point of view of the effect of preventing the passage of fragments after cutting into a tablet with a rough surface state. The glass transition temperature is more preferably 0 ° C or less, and even more preferably -28 ° C or less.

[0050] The polymer (A) can be a polymer produced by any method; however, for example, a polymer obtained by mixing an acrylic copolymer and a compound having an energy-curable carbon-carbon double bond, or a polymer obtained by reacting an acrylic copolymer having a functional group or a methacrylic copolymer (A1) having a functional group, with a compound (A2) having a functional group that can react with the aforementioned functional group and having an energy-curable carbon-carbon double bond, is used.

[0051] Among these, an example of a methacrylic copolymer (A1) having a functional group is a polymer obtained by copolymerizing a monomer (A1-1) having a carbon-carbon double bond, such as an alkyl ester of acrylic acid or a alkyl ester of methacrylic acid and a monomer (A1-2) having a carbon-carbon double bond and having a functional group. Examples of the monomer (A1-1) include hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate and lauryl acrylate, all having an alkyl chain having 6 to 12 carbon atoms; pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate and methyl acrylate, all of which are monomers having an alkyl chain having 5 or less carbon atoms; and methacrylates similar to these.

[0052] Meanwhile, in relation to the monomer (A1-1), a component having an alkyl chain having 6 or more carbon atoms is excellent in view of the collection properties, since the peeling force between the temporary adhesive layer and the adhesive layer can be made small. In addition, a component having an alkyl chain having 12 or less carbon atoms has a low elastic modulus at room temperature and is excellent in view of the adhesive strength of the interface between the temporary adhesive layer and the adhesive layer. When the adhesive strength of the interface between the temporary adhesive layer and the adhesive layer is high, it is preferable when expanding the tape and cutting a tablet, because the interfacial slip between the temporary adhesive layer and the adhesive layer can be suppressed, and the cutting capacity is improved.

[0053] Furthermore, as a monomer having an alkyl chain with a larger number of carbon atoms is used as the monomer (A1-1), the glass transition temperature is reduced. Therefore, a temporary adhesive composition having a desired glass transition temperature can be produced by appropriately selecting the monomer (A1-1). In addition, for the purpose of improving various performances, such as compatibility in addition to the glass transition temperature, a low molecular weight compound having a carbon-carbon double bond, such as vinyl acetate, styrene or acrylonitrile, can also be used. incorporated. In that case, such a low molecular weight compound is incorporated in an amount in the range of 5% by weight or less in relation to the total mass of the monomer (A1-1).

On the other hand, examples of the functional group carried by the monomer (A1-2) include a carboxyl group, a hydroxyl group, an amino group, a cyclic acid anhydride group, an epoxy group and an isocyanate group. Specific examples of the (A1-2) monomer include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylates, acrylamide N-methylol, N-methylol methacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydrate, glycyl acrylate and glycidyl acrylate glycidyl ether.

[0055] Furthermore, in relation to the functional group used for the compound (A2), in a case where the functional group carried by the compound (A1) is a carboxyl group or a cyclic acid anhydride group, the functional group of the compound ( A2) can be a hydroxyl group, an epoxy group, an isocyanate group or the like; in the case of a hydroxyl group, the functional group can be a cyclic acid anhydride group, an isocyanate group or the like; in the case of an amino group, the functional group can be an epoxy group, an isocyanate group or the like; and in the case of an epoxy group, the functional group can be a carboxyl group, a cyclic acid anhydride group, an amino group or the like. Specific examples of these include the same groups as those mentioned as specific examples for the monomer (A1-2). In addition, like compound (A2), a compound, in which a portion of the isocyanate groups of a polyisocyanate compound has been urethanized using hydroxyl groups or carboxyl groups and a monomer having an energy-curable carbon-carbon double bond, can also be used.

[0056] However, with regard to the reaction between the compound (A1) and the compound (A2), a product having desired characteristics in relation to the characteristics, such as the acid value or the value of the hydroxyl group, can be produced by leaving unreacted functional groups. When the OH groups are left unreacted, such that the value of the hydroxyl group of the polymer (A) is adjusted to 5 to 100, the temporary adhesive force after irradiation with energy rays is reduced and, thus, the risk of collection failure can be further reduced. In addition, when the COOH groups are left unreacted, such that the acid value of the polymer (A) is adjusted to 0.5 to 30, an effect of improving the state after the restoration of the temporary adhesive layer after the tape for Semiconductor processing of the invention has been expanded, it is obtained, which is preferable. When the value of the hydroxyl group of the polymer (A) is 5 or greater, it is excellent from the point of view of the effect of reducing the temporary adhesive force after irradiation with energy rays, and when the value of the hydroxyl group is 100 or less, it is excellent from the point of view of the fluidity of the temporary adhesive after irradiation with energy rays. In addition, when the acid value is 0.5 or greater, it is excellent from the point of view of the restoration properties of the tape, and when the acid value is 30 or less, it is excellent from the point of view of the fluidity of the temporary adhesive.

[0057] Regarding the synthesis of the polymer (A), described above, as the organic solvent in the case of carrying out the reaction by polymerization in solution, a ketone-based solvent, an ester-based solvent, a solvent-based solvent alcohol, or an aromatic solvent can be used. However, among these, a solvent that is generally a good solvent for acrylic polymers and has a boiling point of 60 ° C to 120 ° C, such as toluene, ethyl acetate, isopropyl alcohol, benzene methyl cellosolve, ethyl cellosolve, acetone, or methyl ethyl ketone, is preferred. In relation to the polymerization initiator, a generator of radicals based on azobis, such as α, α'-azobisisobutyronitrile, or a generator of radicals based on organic peroxide, such as benzoyl peroxide, is usually used. At this time, if necessary, a catalyst and a polymerization inhibitor can be used in combination, and by regulating the polymerization temperature and the polymerization time, a polymer (A) having a desired molecular weight can be obtained. In addition, in connection with the regulation of molecular weight, it is preferable to use mercaptan or a solvent based on carbon tetrachloride. However, this reaction is not intended to be limited to solution polymerization, and other methods, such as mass polymerization and suspension polymerization, can also be used.

[0058] The polymer (A) can be obtained in this way as described above; however, according to the invention, when the molecular weight of the polymer (A) is adjusted to 300,000 or more, it is excellent from the point of view of increasing the cohesive strength. The high cohesive force leads to a sliding suppression effect at the interface between the temporary adhesive layer and the adhesive layer at the time of expansion, and since the spread of the elastic force to the adhesive layer is easily achieved, it is preferable from the point of view. that the divisibility of the adhesive layer is increased. When the molecular weight of the polymer (A) is adjusted to 2,000,000 or less, it is excellent from the point of view of suppressing gelation at the time of synthesis and at the time of coating. However, the molecular weight according to the invention means the average molecular weight of the mass calculated in relation to polystyrene standards.

[0059] Furthermore, with respect to the semiconductor processing tape 10 of the invention, the resin composition that constitutes the temporary adhesive layer 12 may further include a compound (B) that acts as a crosslinking agent, in addition to the polymer (THE). Examples of these include a polyisocyanate, a melamine-formaldehyde resin and an epoxy resin, and these can be used alone or in combination with two or more of these types. This compound (B) reacts with the polymer (A) or the substrate film, and the compound (B) can increase, through the resulting cross-linked structure, the cohesive strength of the temporary adhesive containing the polymers (A) and (B) as main components after the application of the temporary adhesive composition.

[0060] There are no particular limitations on the polyisocyanate, and its examples include aromatic isocyanates, such as 4,4'-diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4-diisocyanate , 4'-diphenyl ether, and 4,4'- [2,2-bis (4-phenoxyphenyl) propane] diisocyanate; hexamethylene diisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate lysine and lysine triisocyanate. Specifically, CORONATE L (manufactured by Nippon Polyurethane Industry Co., Ltd., trade name) and the like can be used. Regarding melamine-formaldehyde resin, specifically NIKALAC MX-45 (manufactured by Sanwa Chemical Co., Ltd., trade name), MELAN (manufactured by Hitachi Chemical Co., Ltd., trade name) and the like can be used . Regarding the epoxy resin, TETRAD-X (manufactured by Mitsubishi Chemical Corp., trade name) and the like can be used. According to the invention, it is particularly preferable to use a polyisocyanate.

[0061] A temporary adhesive layer, in which the amount of compound addition (B) has been adjusted to 0.1 parts by weight or more relative to 100 parts by weight of the polymer (A), is excellent in view of the cohesive strength . The amount of addition of compound (B) is, more preferably, 0.5 parts by weight or more. In addition, a temporary adhesive layer, in which the amount of compound addition (B) has been adjusted to 10 parts by mass or less, is excellent with a view to suppressing rapid gelation at the time of application and thus satisfactory functionality for the incorporation, application or the like of the temporary adhesive is obtained. The amount of addition is more preferably 5 parts by weight or less.

[0062] Furthermore, according to the invention, the temporary adhesive layer 12 can also include a photopolymerization initiator (C). The light curing initiator (C) included in the temporary adhesive layer 12 is not particularly limited, and any conventionally known light curing initiator can be used. Examples of these include benzophenones, such as benzophenone, 4,4’-dimethylaminobenzophenone, 4,4’-diethylaminobenzophenone and 4,4’-dichlorobenzophenone; acetophenones, such as acetophenone and diethoxyacetophenone; anthraquinones, such as 2-ethylanthraquinone and t-butylanthraquinone; 2-chlorothioxanthone, ethyl ether benzoin, isopropyl ether benzoin, benzyl, a 2,4,5-triaryl-imidazole dimer (lofin dimer) and an acridine-based compound, and these can be used alone or in combination with two or more types of it. Regarding the amount of addition of the light curing initiator (C), it is preferable to incorporate the light curing initiator (C) in an amount of 0.1 parts by weight or more, and more preferably, 0.5 parts by weight or more, relative to to 100 parts by weight of the polymer (A). In addition, the upper limit of the amount of addition is preferably 10 parts by weight or less and, more preferably, 5 parts by weight or less.

[0063] Furthermore, in the temporary energy-curable adhesive used for the invention, an adhesion promoter, a temporary adhesion modifier, a surfactant and the like, or other modifiers can be incorporated when necessary. In addition, an inorganic compound filler can also be added as appropriate.

[0064] Temporary adhesive layer 12 can be formed using a conventional method to form a temporary adhesive layer. The temporary adhesive layer 12 can be formed on a substrate film 11, for example, by a method of forming a temporary adhesive layer by applying the temporary adhesive composition, described above, on a predetermined surface of the substrate film 11, or a method of applying the temporary adhesive composition to a separator (e.g., a plastic film or sheet having a release agent applied) to form the temporary adhesive layer 12 and then transferring the temporary adhesive layer 12 to a predetermined surface of the substrate. However, the temporary adhesive layer 12 can be in the form of a single layer, or it can be in a laminated form.

[0065] The thickness of the temporary adhesive layer 12 is not particularly limited; however, when the thickness is 2 μm or more, it is excellent from the point of view of the adhesion force, and the thickness is, more preferably, 5 μm or more. When the thickness is 15 μm or less, excellent collection performance is obtained and the thickness is, more preferably, 10 μm or less.

[0066] In relation to the temporary adhesive tape 15, the sum of the average value of the differential value of the rate of thermal deformation in the MD direction (Machine Direction) per 1 ° C between 40 ° C and 80 ° C measured at the time of increasing the temperature by means of a thermomechanical testing machine, and the average value of the differential value of the thermal deformation rate in the TD direction (Transverse Direction) by 1 ° C between 40 ° C and 80 ° C measured at the time of the temperature increase by means of a thermomechanical testing machine, it is a negative value, that is, less than zero. The MD direction is a flow direction at the time of film formation, and the TD direction is a direction perpendicular to the MD direction.

[0067] Adjusting the sum of the average value of the differential value of the thermal deformation rate in the MD direction of the temporary adhesive tape 15 by 1 ° C between 40 ° C and 80 ° C measured at the time of temperature increase by means of a test of thermomechanical characteristics, and the average value of the differential value of the rate of thermal deformation in the TD direction by 1 ° C between 40 ° C and 80 ° C measured at the time of temperature increase by means of a thermomechanical characteristics test machine, for a negative value, the semiconductor processing tape 10 can be induced to retract by heating to a low temperature in a short period of time. Therefore, even in a case where a heat shrinking process of a slack portion of the tape for semiconductor processing 10, inducing the use of a pair of hot air nozzles orbiting around the slack portion, the slack produced by the expansion in a short period of time can be eliminated without shrinking by heat several times, while reducing the amount of expansion, and an appropriate cutting width can be retained.

[0068] The thermal deformation rate can be calculated by the following formula (1) measuring the amount of deformation induced by temperature according to JIS K7197: 2012. Thermal deformation rate TMA (%) = (Amount of deformation in the sample length / sample length before measurement) X 100 (1)

[0069] However, in relation to the amount of deformation, the direction of expansion of the sample is indicated as a positive direction, and the direction of contraction is indicated as a negative direction.

[0070] The differential value of the thermal deformation rate behaves as shown by the curve in the MD direction or by the curve in the TD direction in Fig. 9, and when it is said that the sum of the average value of the differential value in the MD direction and the average value of the differential value in the TD direction is a negative value, it is implied that the temporary adhesive tape generally exhibits a retraction behavior between 40 ° C and 80 ° C.

[0071] To adjust the sum of the average value of the differential value in the MD direction and the average value of the differential value in the TD direction to a negative value, a process of stretching the resin film after the formation of the film can be added and the thickness of the temporary adhesive tape 15 or the amount of stretch in the MD or TD direction can be adjusted depending on the type of resin that makes up the temporary adhesive tape 15. Examples of the method of stretching the temporary adhesive tape in the TD direction include a method of using a tensioner , a method involving blow molding (filling), and a method of using an expansion roll. Examples of the method of stretching the temporary adhesive tape in the MD direction include a method of pulling at the time of extruding a mold and a method of pulling into the transport rollers. Regarding the method of obtaining the temporary adhesive tape 15 of the invention, any method can be used.

<Adhesive Layer>

[0072] With respect to the semiconductor processing tape 10 of the invention, the adhesive layer 13 is intended to be such that after a chip is attached to the semiconductor processing tape 10 and cut, when the fragments are collected, the adhesive layer 13 is separated from the temporary adhesive layer 12 and adheres to the fragments. Then, the adhesive layer is used as an adhesive to attach the fragments to a substrate or a lead structure.

[0073] Adhesive layer 13 is not particularly limited; however, the adhesive layer 13 can be any film-type adhesive that is generally used in tablets, and an example of this is an adhesive layer containing a thermoplastic resin and a thermally polymerizable component. The thermoplastic resin used for the adhesive layer 13 of the invention is preferably a resin having thermoplasticity, or a resin having thermoplasticity in an uncured state and forms a cross-linked structure after being heated. There are no particular limitations, but according to one embodiment, a thermoplastic resin having a weighted average molecular weight of 5,000 to 200,000 and a glass transition temperature of 0 ° C to 150 ° C can be used. In addition, according to another embodiment, a thermoplastic resin having a weighted average molecular weight of 100,000 to 1,000,000 and a glass transition temperature of -50 ° C to 20 ° C can be used.

[0074] Examples of the thermoplastic forming resin include a polyimide resin, a polyamide resin, a polyetherimide resin, a polyamideimide resin, a polyester resin, a polyesterimide resin, a phenoxy resin, a polysulfone resin, a polyether sulfone resin, a polyphenylene sulfide resin, and a polyether ketone resin. Among them, it is preferable to use a polyimide resin or a phenoxy resin. In relation to the forming thermoplastic resin, it is preferable to use a polymer containing a functional group.

[0075] A polyimide resin can be obtained by subjecting a tetracarboxylic acid dianhydride and a diamine to a condensation reaction by a known method. That is, an addition reaction is carried out in an organic solvent using a tetracarboxylic acid dianhydride and a diamine in equimolar amounts or in quasi-equimolar amounts (the order of addition of the various components is arbitrary) at a reaction temperature of 80 ° C or less, and preferably from 0 ° C to 60 ° C. As the reaction progresses, the viscosity of the reaction liquid increases slowly and a polyamide acid, which is a precursor to polyimide, is produced. This polyamidic acid can have its molecular weight regulated by subjecting the polyamide acid to depolymerization by heating the compound to a temperature of 50 ° C to 80 ° C. The polyimide resin can be obtained by subjecting the reaction product (polyamide acid) to cyclization by dehydration. Dehydration cycling can be performed by a thermal cycling method to perform a heat treatment, and a chemical cycling method using a dehydrating agent.

[0076] The tetracarboxylic acid dianhydride used as a raw material for a polyimide resin, is not particularly limited and, for example, 1,2- (ethylene) bis (trimellitic anhydride), 1,3- (trimethylene) bis (trimellitic anhydride), 1,4- (tetramethylene) bis (trimellitic anhydride), 1,5- (pentamethylene) bis (trimellitic anhydride), 1,6- (hexamethylene) bis (trimellitic anhydride), 1,7- ( heptamethylene) bis (trimellitic anhydride), 1,8- (octamethylene) bis (trimellitic anhydride), 1,9- (nonamethylene) bis (trimellitic anhydride), 1.10- (decamethylene) bis (trimellitic anhydride), 1.12 - (dodecamethylene) bis (trimellitic anhydride), 1.16- (hexadecamethylene) bis (trimellitic anhydride), 1.18- (octadecamethylene) bis (trimellitic anhydride), pyromelitic dianhydride, 3.3 'acid dianhydride, 4.4 '- biphenyl tetra carboxylic acid, 2,2', 3,3 'biphenyl tetra carboxylic acid, 2,2-bis (3,4-dicarboxyphenyl) propane, 2,2-bis (2,3-dicarboxyphenyl) propane, dianhydride1,1 dianhydride -bis (2,3-dicarboxyphenyl) ethane, dianidri dode1,1-bis (3,4-dicarboxyphenyl) ethane, dianhydridodebis (2,3-dicarboxyphenyl) methane, dianhydridodebis (3,4-dicarboxyphenyl) methane, dianhydridodebis (3,4- dicarboxyphenyl) sulfone, dacid acid 3,4 9,10- perylenetetracarboxylic acid, dianhydridodebis (3,4-dicarboxyphenyl) ether, benzene-1,2,3,4-tetracarboxylic acid dianhydride, 3,4,3 'acid dianhydride, 4'-benzophenonatetracarboxylic acid, acid 2 dianhydride , 3,2 ', 3'- benzophenonatetracarboxylic acid, 3,3,3', 4'-benzophenonatetracarboxylic acid dianhydride, 1,2,5,6- naphthalenetetracarboxylic acid dianhydride, 1,4,5,8- acid dianhydride naphthalenetetracarboxylic acid, 2,3,6,7- naphthalenetetracarboxylic acid dianhydride, 1,2,4,5-naphthalenetetracarboxylic acid dianhydride, 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic acid dianhydride 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic acid, 2,3,6,7-tetrachloronaphthalene-1,4,5,8-tetracarboxylic acid dianhydride, 1,8-phenanthrene acid dianhydride, 10- tetracarboxylic, dianid pyrazine-2,3,5,6-tetracarboxylic acid, thiophene-2,3,5,6-tetracarboxylic acid dianhydride, 2,3,3 ', 4'-biphenyltetracarboxylic acid dianhydride, 3-dianhydride, 4,3 ', 4'-biphenyltetracarboxylic acid, 2,3,2', 3'-biphenyltetracarboxylic acid dianhydride, bis (3,4-dicarboxyphenyl) dimethylsilane dianhydride, bis (3,4-dicarboxyphenyl) methylphenylsilane dianhydride, dianhydride bis (3,4-dicarboxyphenyl) diphenylsilane, 1,4-bis (3,4-dicarboxyphenyldimethylsilyl) benzene dianhydride, 1,3-bis (3,4-dicarboxyphenyl) -1,1,3,3- dianhydride tetramethyldicyclohexane, p-phenylenebis (trimellitic anhydride), ethylene tetra-carboxylic acid dianhydride, 1,2,3,4-butanetetra-carboxylic acid dianhydride, decahydronaphthalene-1,4,5,8-tetracarboxylic acid dianhydride, 4,8- dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic acid, cyclopentane-1,2,3,4-tetracarboxylic acid dianhydride, pyrrolidine-2,3 acid dianhydride, 4,5- tetracarboxylic, acid dianhydride 1,2,3,4-cyclobutanotetracarboxylic acid, bis (exo-bicyclo [2,2,1] heptane-2,3-dicarboxylic acid dianhydride, bicyclo acid [2,2,2] -oct-7- eno-2,3,5,6-tetracarboxylic, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride, 2,2-bis [4- (3,4-dicarboxyphenyl) phenyl] hexafluoropropane, sulfide dianhydride of 4,4'-bis (3,4-dicarboxyphenoxy) diphenyl, 1,4-bis (2-hydroxyhexafluoroisopropyl) benzenobis (trimellitic anhydride), 1,3-bis (2-hydroxyhexafluoroisopropyl) benzenobis (trimellitic anhydride), dianhydride 5- (2,5-dioxotetrahydrofuryl) -3-methyl-3-cyclohexene-1,2-dicarboxylic acid, tetrahydrofuran-2,3,4,5-tetracarboxylic acid dianhydride and the like can be used. These compounds can be used alone or in combination of two or more types thereof.

em que R1 e R2 representam, cada um, um grupo hidrocarboneto divalente tendo 1 a 30 átomos de carbono, enquanto que R1’s e R2’s podem ser, respectivamente, idênticos ou diferentes; R3 e R4 representam, cada um, um grupo hidrocarboneto monovalente, enquanto que R3’s e R4’s podem ser, respectivamente, idênticos ou diferentes; e m representa um número inteiro de 1 ou maior.[0077] The diamine used as a raw material for a polyimide is not particularly limited and, for example, aromatic diamines such as o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3'-diaminodiphenyl ether, ether 3,4'-diaminodiphenyl, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane ether, bis (4-amino-3,5-dimethylphenyl) methane , bis (4-amino-3,5-diisopropylphenyl) methane, 3,3'-diaminodiphenyldifluoromethane, 3,4'-diaminodiphenyldifluoromethane, 4,4'-diaminodiphenyldifluoromethane, 3,3'-diaminodiphenylsulfone, 3,4'- diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfone, 3,3'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl ketone, 3,4'-diaminodiphenyl ketone, 4,4'-diaminodiphenyl ketone, 2,2-bis (3-aminophenyl) propane, 2,2'- (3,4'-diaminodiphenyl) propane, 2,2-bis (4-aminophenyl) propane, 2 , 2-bis (3-aminophenyl) hexafluoropropane, 2,2- (3,4'-diaminodiphenyl) hexafluoropane, 2,2-bis (4 -aminophenyl) hexafluoropane, 1,3-bis (3-aminophenoxy) benzene, 1,4-bis (3-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 3,3'- (1,4 -phenylenebis (1-methylethylidene)) bisaniline, 3,4 '- (1,4-phenylenebis (1-methylethylidene) bisaniline, 4,4' - (1,4-phenylenebis (1-methylethylidene) bisaniline, 2,2- bis (4- (3-aminophenoxy) phenyl) propane, 2,2-bis (4- (4-aminophenoxy) phenyl) propane, 2,2-bis (4- (3-aminophenoxy) phenyl) hexafluoropropane, 2.2 bis (4- (4-aminophenoxy) phenyl) hexafluoropropane, bis (4- (3-aminophenoxy) phenyl) sulfide, bis (4- (4-aminophenoxy) phenyl), bis (4- (3-aminophenoxy) phenyl) sulfone, bis (4- (4-aminophenoxy) phenyl) sulfone and 3,5-diaminobenzoic acid; and aliphatic diamines, such as 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diamino-octane, 1 , 9-diaminononane, 1,10-diaminodecane, 1,11-diaminodecane, 1,12-diaminododecane, 1,2-diaminocyclohexane, a diaminopolysiloxane represented by the following General Formula (1), 1,3-bis (aminomethyl) cyclohexane, and polyoxyalkylenediamines, such as JEFFAMINE D-230, D-400, D-2000, D-4000, ED-600, ED-900, ED-2001 and EDR-148 manufactured by Sun Techno Chemical Co., Ltd .; and the like can be used. These compounds can be used alone or in combination of two or more types thereof. The glass transition temperature of the polyimide resin is preferably 0 ° C to 200 ° C, and the weighted average molecular weight is preferably 10,000 to 200,000. [Chemical Formula 1]

wherein R1 and R2 each represent a divalent hydrocarbon group having 1 to 30 carbon atoms, while R1's and R2's can be, respectively, identical or different; R3 and R4 each represent a monovalent hydrocarbon group, while R3's and R4's can be, respectively, identical or different; em represents an integer of 1 or greater.

[0078] With respect to the phenoxy resin, which is one of the preferred thermoplastic resins in addition to those described above, a resin that can be obtained by a method of reacting several bisphenols with epichlorohydrin, or a method for reacting a resin is preferred liquid epoxy with a bisphenol. Examples of bisphenol include bisphenol A, bisphenol-bisphenol AF, bisphenol AD, bisphenol F and bisphenol S. As a phenoxy resin has a structure similar to that of an epoxy resin, a phenoxy resin has high compatibility with epoxy resins and is suitable for conferring adhesiveness satisfactory to an adhesive film.

[0079] An example of the phenoxy resin used for the invention is a resin that has a repeating unit represented by the following general formula (2): [Chemical Formula 2]

[0080] In the general formula (2) described above, X represents a single bond or a divalent bond group. Examples of the divalent bonding group include an alkylene group, a phenylene group, -O-, -S-, -SO- and -SO2-. Here, the alkylene group is preferably an alkylene group having 1 to 10 carbon atoms and, more preferably, -C (R1) (R2) -. R1 and R2 each represent a hydrogen atom or an alkyl group. The alkyl group is preferably a straight or branched alkyl group having 1 to 8 carbon atoms, and its examples include methyl, ethyl, n-propyl, isopropyl, isooctyl, 2-ethylhexyl and 1,3,3- trimethylbutyl. In addition, the alkyl group can be substituted with a halogen atom, and its examples include a trifluoromethyl group. X is preferably an alkylene group, -O-, -S-, a fluorene group, or -SO2-, and, more preferably, an alkylene or -SO2- group. Among them, -C (CH3) 2-, -CH (CH3) -, -CH2-, and -SO2- are preferred; - C (CH3) 2-, -CH (CH3) -, and -CH2- are more preferred; and -C (CH3) 2- is particularly preferred.

[0081] When the phenoxy resin represented by the General Formula (2) has repeated units, the phenoxy resin can be a resin having a plurality of repeated units with different X's of the General Formula (2) described above, or the phenoxy resin can be composed only from repeated units with identical X's. According to the invention, a resin composed only of repeated units with identical X's is preferred.

[0082] Furthermore, when a polar substituent such as a hydroxyl group or a carboxyl group is incorporated into the phenoxy resin represented by the General Formula (2), compatibility with a thermally polymerizable component is increased, and a uniform external appearance or uniform characteristics can be transmitted.

[0083] When the average molecular weight of the phenoxy resin is 5,000 or more, it is excellent from the point of view of the film-forming properties. The mass average molecular weight is more preferably 10,000 or more, and even more preferably 30,000 or more. In addition, when the average mass molecular weight is 150,000 or less, it is preferable from the point of view of fluidity when bonding by thermal pressure and compatibility with other resins. The weight average molecular weight, more preferably, 100,000 or less. In addition, when the glass transition temperature is -50 ° C or higher, it is excellent from the point of view of the film-forming properties, and the glass transition temperature is, more preferably, 0 ° C or higher, and even more so. preferably, 50 ° C or higher. When the glass transition temperature is 150 ° C, excellent adhesive strength of the adhesive layer 13 is obtained at the time of bonding the mold. The glass transition temperature is more preferably 120 ° C or less, and even more preferably 110 ° C or less.

[0084] On the other hand, examples of the functional group for the polymer containing a functional group, as described above, include a glycidyl group, an acryloyl group, a methacryloyl group, a hydroxyl group, a carboxyl group, an isocyanurate group, a group amino, and an amide group, and among them, a glycidyl group is preferred.

Examples of the high molecular weight component containing a functional group include (meth) acrylic copolymers containing functional groups, such as a glycidyl group, a hydroxyl group and a carboxyl group.

[0086] In relation to (meth) acrylic copolymers, for example, an (meth) acrylic ester copolymer and an acrylic rubber can be used, and an acrylic rubber is preferred. An acrylic rubber is a rubber that contains an acrylic acid ester as the main component and is mainly formed from a copolymer of butyl acrylate or similar, or a copolymer of ethyl acrylate and acrylonitrile or the like.

[0087] In a case where the compound contains a glycidyl group, as a functional group, the amount of a repetitive unit containing glycidyl group is preferably 0.5% to 6.0% by weight, more preferably 0.5 % to 5.0% by weight and, particularly preferred, 0.8% to 5.0% by weight. A repeating unit containing a glycidyl group is a constituent monomer for a (meth) acrylic copolymer containing glycidyl groups, and specific examples of which include glycidyl acrylate and glycidyl methacrylate. When the amount of the repeating unit containing the glycidyl group is in this range, the adhesive strength can be ensured, and also, gelation can be avoided.

[0088] Examples of the constituent monomer for the (meth) acrylic copolymer other than glycidyl acrylate and glycidyl methacrylate, include (meth) ethyl acrylate and (meth) butyl acrylate, and these can be used alone or in combination with two or more types of it. However, according to the invention, ethyl (meth) acrylate represents ethyl acrylate and / or ethyl methacrylate. The mixing ratio, in the case of the use of functional monomers in combination, can be determined taking into account the glass transition temperature of the (meth) acrylic copolymer. When the glass transition temperature is set to - 50 ° C or higher, it is preferable from the point of view that excellent film-forming properties are obtained, and excessive adhesion at normal temperature can be suppressed. When the adhesion force at normal temperature is excessive, handling the adhesive layer becomes difficult. The glass transition temperature is, more preferably, -20 ° C or higher, and even more preferably, 0 ° C or higher. In addition, when the glass transition temperature is set to 30 ° C or below, it is excellent from the point of view of the adhesive strength of the adhesive layer at the time of mold bonding, and the glass transition temperature is, more preferably, 20 ° C or lower.

[0089] In a case where a high molecular weight component containing a functional monomer is produced by the polymerization of the monomers mentioned above, the method of polymerization is not particularly limited and, for example, methods such as ball polymerization and polymerization of solution can be used. Above all, sphere polymerization is preferred.

[0090] According to the invention, when the weighted average molecular weight of the high molecular weight component containing a functional monomer is 100,000 or more, it is excellent from the point of view of the film-forming properties, and the weighted average molecular weight is more preferably 200,000 or more, and even more preferably 500,000 or more. In addition, when the weighted average molecular weight is adjusted to 2,000,000 or less, it is excellent from the point of view that the hot fluidity of the adhesive layer at the time of mold bonding is increased. When the hot fluidity of the adhesive layer at the time of mold bonding is increased, satisfactory adhesion between the adhesive layer and the adhesion is obtained, and the adhesive strength can be increased. In addition, the irregularity of the adherent's surface is incorporated and, thus, voids can be easily suppressed. The weighted average molecular weight is more preferably 1,000,000 or less, and even more preferably 800,000 or less, and when the weighted average molecular weight is set to 500,000 or less, higher effects can be obtained.

[0091] In addition, the thermally polymerizable component is not particularly limited as long as the thermally polymerizable component can be polymerized by heat, and examples include compounds having functional groups, such as a glycidyl group, an acryloyl group, a methacryloyl group, a hydroxyl group, a carboxyl group, an isocyanurate group, an amino group and an amide group; and drive materials. These compounds can be used alone or in combination with two or more types thereof; however, when considering the heat resistance of the adhesive layer, it is preferable that the adhesive layer contains a thermosetting resin that is heat cured and exerts an adhesive action, together with a curing agent and an accelerator. Examples of the thermosetting resin include an epoxy resin, an acrylic resin, a silicone resin, a phenolic resin, a thermosetting polyimide resin, a polyurethane resin, a melamine resin and a urea resin. Particularly, from the point of view of obtaining an adhesive layer with excellent heat resistance, viability and reliability, it is more preferable to use an epoxy resin.

[0092] The epoxy resin is not particularly limited, as long as the epoxy resin is cured and has an adhesive action, and a bifunctional epoxy resin, such as bisphenol A epoxy, or a novolac type epoxy resin, such as a novolac epoxy resin phenol type or a cresol novolac epoxy resin can be used. Epoxy resins, generally known, such as a polyfunctional epoxy resin, an epoxy resin of the glycidylamine type, an epoxy resin containing heterocyclic ring and an alicyclic epoxy resin can also be applied.

[0093] Examples of bisphenol A-type epoxy resin include the EPIKOTE series (EPIKOTE 807, EPIKOTE 815, EPIKOTE 825, EPIKOTE 827, EPIKOTE 828, EPIKOTE 834, EPIKOTE 1001, EPIKOTE 1004, EPIKOTE 1007 and manufactured by Mitsubishi 1009) Chemical. Corp .; DER-330, DER-301 and DER-361 manufactured by Dow Chemical Co .; and YD8125 and YDF8170 manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. Examples of the phenol novolac epoxy resin include EPIKOTE 152 and EPIKOTE 154, manufactured by Mitsubishi Chemical Corp .; EPPN-201 manufactured by Nippon Kayaku Co., Ltd .; and DEN-438 manufactured by Dow Chemical Co. Examples of the o-cresol novolac epoxy resin include EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025 and EOCN-1027 manufactured by Nippon Kayaku Co. , Ltd .; and YDCN701, YDCN702, YDCN703 and YDCN704 manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. Examples of the polyfunctional epoxy resin include EPON1031S manufactured by Mitsubishi Chemical Corp .; ARALDITE 0163, manufactured by Ciba Specialty Chemicals Corp .; and DENACOL EX-611, EX-614, EX-614B, EX-622, EX-512, EX-521, EX-421, EX-411 and EX-321 manufactured by Nagase ChemteX Corp. Examples of the amine-type epoxy resin include EPIKOTE 604 manufactured by Mitsubishi Chemical Corp .; YH-434 manufactured by Tohto Chemical Industry Co., Ltd .; TETRAD-X and TETRAD-C manufactured by Mitsubishi Gas Chemical Co., Inc .; and ELM-120 manufactured by Sumitomo Chemical Co., Ltd. Examples of the epoxy resin containing heterocyclic ring include ARALDITE PT810 manufactured by Ciba Specialty Chemicals Corp .; ERL4234, ERL4299, ERL4221 and ERL4206 manufactured by Union Carbide Corp. These epoxy resins can be used alone or in combination with two or more of these types.

[0094] In order to cure the thermosetting resin, additives can be added to it, as appropriate. Examples of such additives include a curing agent, a curing accelerator and a catalyst. In the case of adding a catalyst, a co-catalyst can be used as needed.

[0095] In a case where an epoxy resin is used as the thermosetting resin, it is preferable to use an epoxy resin curing agent or a curing accelerator, and it is more preferable to use them in combination. Examples of the curing agent include a phenolic resin, diciandiamide, a boron trifluoride complex, an organic hydrazide compound, an amine, a polyamide resin, an imidazole compound, a urea or thiourea compound, a polymeric compound, a polysulfide resin having mercapto groups at the terminals, an acid anhydride and a light / ultraviolet curing agent. These can be used alone or in combination with two or more types of them.

[0096] Among these, examples of the boron trifluoride complex compound include amine and boron trifluoride complexes with various amine compounds (preferably primary amine compounds), and examples of the organic hydrazide compound include isophthalic acid dihydrazide.

Examples of the phenolic resin include phenolic resins of the novolac type, such as a phenol novolac resin, an aralkyl phenol resin, a cresol novolac resin, a tert-butylphenol novolac resin and a nonylphenol novolac resin; a phenolic resin of the resol type and a polyoxystyrene, such as poly (para-oxystyrene). Among them, a phenolic compound having at least two phenolic hydroxyl groups in the molecule is preferred.

[0098] Examples of the phenolic compound having at least two phenolic hydroxyl groups in the molecule include a novolac phenol resin, a novolac cresol resin, a novolac resin of t-butylphenol, a novolac resin of dicyclopentadiene cresol, a novolac resin of dicyclopentadiene phenol, a xylylene-modified novolac phenol resin, a naphthol novolac resin, a trisphenol novolac resin, a tetrakisphenol novolac resin, a bisphenol A novolac resin, a poly (p-vinylphenol) resin and an aralkyl phenol resin. In addition, among these phenolic resins, a novolac phenol resin and an aralkyl phenol resin are particularly preferred, and they can increase the reliability of the bond.

[0099] Examples of the amine include chain-like aliphatic amines (diethylenetriamine, triethylenetetramine, hexamethylenediamine, N, N-dimethylpropylamine, benzyldimethylamine, 2- (dimethylamino) phenol, 2,4,6-tris (dimethylaminomethyl) phenol, m-xylenediamine , and the like), aliphatic cyclic amines (N-aminoethylpiperazine, bis (3-methyl-4-aminocyclohexyl) methane, bis (4-aminocyclohexyl) methane, menthenediamine, isophoronediamine, 1,3-bis (aminomethyl) cyclohexane, and the like) , heterocyclic amines (piperazine, N, N-dimethylpiperazine, triethylenediamine, melamine, guanamine and the like), aromatic amines (meta-phenylenediamine, 4,4'-diaminodiphenylmethane, diamino-4,4'-diaminodiphenylsulfone, and the like), resin resins polyamide (polyamidoamine is preferred; condensation product of an acid dimer and a polyamine), imidazole compounds (2-phenyl-4,5-dihydroxymethylimidazole, 2-methylimidazole, 2,4-dimethylimidazole, 2-n-heptadecylimidazole, trimellitate 1- cyanoethyl-2-undecylimidazolium, a epoxy-imidazole adduct and the like), urea or thiourea compounds (a compound of N, N-dialkylurea, a compound of N, N-dialkylthiourea and the like), polymercaptan compounds, polysulfide resins having mercapto groups at the terminals, acid anhydrides (tetrahydrophthalic anhydride and the like), and light / ultraviolet curing agents (diphenyliodonium hexafluorophosphate, triphenylsulfonium hexafluorophosphate and the like).

[00100] The curing accelerator is not particularly limited as long as it is capable of curing a thermosetting resin, examples of which include an imidazole, a dicyandiamide derivative, a dicarboxylic acid dihydrazide, triphenylphosphine, tetrafenylphosphonium tetrafenyl phosphate, 2- ethyl-4-methylimidazole-tetrafenylborate and 1,8-diazabicyclo [5.4.0] undecene-7-tetrafenylborate.

[00101] Examples of imidazole include imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2 -ethylimidazole, 1-benzyl-2-ethyl-5-methylimidazole, 2-phenyl-4-methyl-5-hydroxydimethylimidazole and 2-phenyl-4,5-dihydroxymethylimidazole.

[00102] The curing agent content for an epoxy resin or curing accelerator in the adhesive layer is not particularly limited, and the ideal content varies depending on the type of curing agent or curing accelerator.

[00103] With respect to the mixing ratios of epoxy resin and phenolic resin, for example, it is preferable that the resins are mixed in such a way that the proportion of hydroxyl groups in the phenolic resin is 0.5 to 2.0 equivalents per equivalent of epoxy groups in epoxy resin components. The proportion of hydroxyl groups is, more preferably, from 0.8 to 1.2 equivalents. That is, it is because when the mixing ratios of the two components are not in the range described above, the curing reaction does not proceed sufficiently and the characteristics of the adhesive layer are easily deteriorated. For other thermosetting resins and the curing agent, according to one embodiment, the mixing ratio of the curing agent is 0.5 to 20 parts by weight with respect to 100 parts by weight of the thermosetting resins and, according to otherwise, the proportion of the curing agent is 1 to 10 parts by weight. It is preferable that the content of the curing accelerator is less than the content of the curing agent, and the content of the curing accelerator is preferably 0.001 to 1.5 parts by weight, and more preferably, 0.01 to 0.95 parts by mass, in relation to 100 parts by mass of thermosetting resins. When the curing accelerator content is adjusted to the range described above, the curing accelerator can sufficiently help the progress of the curing reaction. The catalyst content is preferably from 0.001 to 1.5 parts by weight, and more preferably from 0.01 to 1.0 parts by weight, based on 100 parts by weight of thermosetting resins.

[00104] In addition, the adhesive layer 13 of the invention can have a charge incorporated as appropriate according to the use. Thus, increasing the cutting capacity, increasing the handling capacity, adjusting the viscosity of the molten material and imparting thixotropy to the adhesive layer in an uncured state, and imparting thermal conductivity and increasing the adhesive strength to the adhesive layer in a cured state, it can be promoted.

[00105] The filler used for the invention is preferably an inorganic filler. The inorganic charge is not particularly limited and, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, nitride aluminum, aluminum borate wires, boron nitride, crystalline silica, amorphous silica and antimony oxide can be used. In addition, they can be used as single substances or as mixtures of two or more types of them.

[00106] In addition, among the inorganic fillers described above, from the point of view of improving thermal conductivity, it is preferable to use alumina, aluminum nitride, boron nitride, crystalline silica, amorphous silica or the like. In addition, from the point of view of adjusting the viscosity of the molten material or conferring thixotropy, it is preferable to use aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, oxide magnesium, alumina, crystalline silica, amorphous silica or the like. In addition, from the point of view of improving the cutting capacity, it is preferable to use alumina or silica.

[00107] When the proportion of the load material content is 30% by weight or more, it is excellent from the point of view of the binding capacity of the wire. When connecting the wire, it is preferable that the storage module, after curing the adhesive layer adhered to the fragments that are supplied with wires, be adjusted to the range of 20 to 1,000 MPa at 170 ° C, and when the proportion of the content of the charge is 30% by mass or more, the storage module after curing the adhesive layer can be easily adjusted to this range. In addition, when the proportion of filler content is 75% by weight or less, excellent film-forming properties and excellent hot flowability of the adhesive layer are obtained at the time of mold bonding. When the hot fluidity of the adhesive layer at the time of bonding the mold is improved, satisfactory adhesion between the adhesive layer and the adhesion is achieved, and the adhesive strength can be increased. In addition, the irregularity of the adherent's surface is incorporated and, therefore, it becomes easy to suppress voids. The content ratio is more preferably 70% by weight or less, and even more preferably 60% by weight or less.

[00108] The adhesive layer of the invention can contain two or more types of fillers having different average particle sizes as the filler. In this case, compared to the case of using a single filler, an increase in viscosity in the case, where the proportion of the filler content is high in the mixture of raw materials before the formation of the film, or a decrease in the viscosity in the case in that the proportion of the charge content is low, it can be easily prevented and satisfactory film-forming properties can be easily obtained. The fluidity of an uncured adhesive layer can be optimally controlled, and also, after curing the adhesive layer, excellent adhesive strength is easily obtained.

[00109] Furthermore, in relation to the adhesive layer of the invention, the average particle size of the charge is preferably 2.0 μm or less and, more preferably, 1.0 μm or less. When the average particle size of the charge is 2.0 μm or less, the reduction in film thickness is easily achieved. Here, a thin film suggests a thickness of 20 μm or less. In addition, when the average particle size is 0.01 μm or more, satisfactory dispersibility is obtained.

[00110] In addition, from the point of view of preventing any increase or decrease in the viscosity of the mixture of raw materials before the formation of the film, optimally controlling the fluidity of an uncured adhesive layer, and increasing the adhesive force after curing of the film. adhesive layer, it is preferable that the adhesive layer contains a first charge having an average particle size in the range of 0.1 to 1.0 μm, and a second charge having an average particle size of the primary particle size in the range of 0.005 at 0.03 μm. It is preferable that the adhesive layer contains a first filler that has an average particle size in the range of 0.1 to 1.0 μm and in which 99% or more of the particles are distributed within the particle size range of 0.1 to 1.0 μm, and a second charge that has an average particle size of the primary particle size in the range of 0.005 to 0.03 μm and in which 99% or more of the particles are distributed within the particle size range of 0.005 to 0.1 μm.

[00111] The average particle size according to the invention means the D50 value of a cumulative volume distribution curve, in which 50% by volume of particles have diameters less than this value. According to the invention, the average particle size or the D50 value is measured by a laser diffraction method, for example, using Malvern MASTERSIZER 2000 manufactured by Malvern Instruments, Ltd. According to this technology, the particle size in a liquid dispersion is measured using laser light diffraction based on the application of any of the Fraunhofer or Mie theories. According to the invention, the average particle size or the D50 value refers to a dispersion analysis measured in the range of 0.02 ° to 135 ° in relation to the incident laser light, using Mie's theory or a modified Mie theory for non-spherical particles.

[00112] According to an embodiment of the invention, the temporary adhesive composition constituting the adhesive layer 13 can include 10% to 40% by weight of a thermoplastic resin having a weighted average molecular weight of 5,000 to 200,000; 10% to 40% by weight of a thermally polymerizable component; and 30% to 75% by weight of a filler, based on the total amount of the temporary adhesive composition. In this embodiment, the charge content can be from 30% to 60% by weight, or it can be 40% to 60% by weight. In addition, the average molecular weight of the mass of the thermoplastic resin can be from 5,000 to 150,000, or it can be from 10,000 to 100,000.

[00113] According to another embodiment, the temporary adhesive composition that constitutes adhesive layer 13 can include 10% to 20% by weight of a thermoplastic resin having a weighted average molecular weight of 200,000 to 2,000,000; 20% to 50% by weight of a thermally polymerizable component; and 30% to 75% by weight of a filler, based on the total amount of the temporary adhesive composition. In this embodiment, the charge content can be from 30% to 60% by weight, or it can be from 30% to 50% by weight. In addition, the average mass molecular weight of the thermoplastic resin can be 200,000 to 1,000,000 or it can be 200,000 to 800,000.

[00114] The storage module and fluidity after curing of the adhesive layer 13 can be optimized by adjusting the mixing ratio, and there is also a tendency to obtain sufficient thermal resistance at high temperature.

[00115] Regarding the semiconductor processing tape 10 of the invention, the adhesive layer 13 can be formed by laminating a layer that has been formed on a film previously (hereinafter, referred to as an adhesive film) directly or indirectly on the substrate film 11. It is preferable that the temperature at the time of lamination is adjusted to the range of 10 ° C to 100 ° C, and a linear pressure of 0.01 to 10 N / m is applied to the laminate. However, such an adhesive film can be an adhesive layer 13 formed on a release film, in which case the release film can be removed after lamination, or the release film can be used directly as a covering film for the processing tape. semiconductor 10 and peeled when laminating a chip there.

[00116] The adhesive film can be laminated over the entire surface of the temporary adhesive layer 12; however, an adhesive film that has been previously cut to a shape corresponding to the shape of the insert to be laminated (pre-cut) can be laminated to the temporary adhesive layer 12. As such, in a case where a cut of adhesive film corresponding to the A tablet shape is laminated, as illustrated in Fig. 3, in the area where a tablet W is to be laminated, adhesive layer 13 is available. In the area where a ring structure 20 is to be laminated, only temporary adhesive layer 12 is available, without adhesive layer 13. Generally, since adhesive layer 13 is not easily detached from an adherent, when an adhesive film is used pre-cut, the ring structure 20 can be laminated to the temporary adhesive layer 12. Thus, an effect that the adhesive residue is not susceptible to be generated on the ring structure 20 at the time of peeling the adhesive tape after use is obtained . <Usage Applications>

[00117] The semiconductor processing tape 10 of the invention should be used for a method for producing a semiconductor device, the method including at least one expansion process of dividing an adhesive layer 13 by expansion. Therefore, there are no particular limitations on other additional processes, in order of processes, and the like. For example, semiconductor processing tape 10 can be suitably used for the following methods (A) to (E) to produce a semiconductor device.

Method (A) for producing semiconductor device

[00118] A method for producing a semiconductor device, the method including: (a) a step of laminating a surface protection tape on the front surface of a chip having a circuit pattern formed thereon; (b) a further crushing step of crushing the back surface of the tablet; (c) a step of laminating the laminated adhesive film to the temporary adhesive layer of the semiconductor processing tape for the back surface of the wafer in a state where the wafer has been heated to 70 ° C to 80 ° C; (d) a step of separating the surface protection tape from the front surface of the tablet; (e) a step of irradiation of planned parts of the insert with laser light, and formation regions modified by multiphotonic absorption inside the insert; (f) a step of dividing the wafer and the adhesive film along dividing lines, expanding the tape for semiconductor processing, and obtaining a plurality of fragments bound to the adhesive film; (g) a step to eliminate any slack produced during the expansion, heating and retraction step of the parts that do not overlap the fragments in the semiconductor processing tape, and maintaining the distances between the fragments; and (h) a step of collecting the fragments having the adhesive layer adhered to them, from the temporary adhesive layer of the semiconductor processing tape.

[00119] The present method for producing a semiconductor device is a method of using invisible cut.

Method (B) for producing semiconductor device

[00120] A method for producing a semiconductor device, the method including: (a) a step of laminating a surface protection tape on the front surface of a chip having a circuit pattern formed thereon; (b) a further crushing step of crushing the back surface of the tablet; (c) a step of laminating the adhesive film attached to the temporary adhesive layer of the semiconductor processing tape on the back surface of the wafer in a state where the wafer has been heated to 70 ° C to 80 ° C; (d) a step of separating the surface protection tape from the front surface of the tablet; (e) a step of irradiation of the front surface of the tablet along lines of division with laser light, and division of the tablet into individual fragments; (f) a step of dividing the adhesive film corresponding to the fragments by expanding the tape for semiconductor processing, and obtaining a plurality of fragments fixed to the adhesive film; (g) a step to eliminate any slack produced during the expansion, heating and retraction step of the parts that do not overlap the fragments in the semiconductor processing tape, and maintaining the distances between the fragments; and (h) a step of collecting the fragments having the adhesive layer adhered to them, from the temporary adhesive layer of the semiconductor processing tape.

[00121] The present method for producing a semiconductor device is a method of using full-cut laser cutting.

Method (C) for producing semiconductor device

[00122] A method for producing a semiconductor device, the method including: (a) a step of laminating a surface protection tape on the front surface of a wafer having a circuit pattern formed thereon; (b) a further crushing step of crushing the back surface of the tablet; (c) a step of laminating the laminated adhesive film to the temporary adhesive layer of the semiconductor processing tape for the back surface of the wafer in a state where the wafer has been heated to 70 ° C to 80 ° C; (d) a step of separating the surface protection tape from the front surface of the tablet; (e) a step of cutting the insert along dividing lines using a cutting blade and dividing the insert into individual fragments; (f) a step of dividing the adhesive film corresponding to the fragments by expanding the tape for semiconductor processing, and obtaining a plurality of fragments fixed to the adhesive film; (g) a step to eliminate any slack produced during the expansion, heating and retraction step of the parts that do not overlap the fragments in the semiconductor processing tape, and maintaining the distances between the fragments; and (h) a step of collecting the fragments having the adhesive film attached to them, from the temporary adhesive layer of the tape for semiconductor processing.

[00123] The present method for producing a semiconductor device is a method of using full cut blade cutting.

Method (D) for producing semiconductor device

[00124] A method for producing a semiconductor device, the method including: (a) a cutting step of a chip having a circuit pattern formed on it, at a depth less than the thickness of the chip, along dividing lines planned using a cutting blade; (b) a step of laminating a surface protective tape on the front surface of the insert; (c) a further crushing step of crushing the back surface of the tablet; (d) a step of laminating the laminated adhesive film to the temporary adhesive layer of the tape for processing semiconductors on the back surface of the fragments in a state where the chip was heated to 70 ° C to 80 ° C; (e) a step of separating the surface protective tape from the front surface of the tablet; (f) a step of dividing the adhesive film corresponding to the fragments by expanding the tape for semiconductor processing, and obtaining a plurality of fragments fixed to the adhesive film; (g) a step to eliminate any slack produced during the expansion, heating and retraction step of the parts that do not overlap the fragments in the semiconductor processing tape, and maintaining the distances between the fragments; and (h) a step of collecting the fragments having the adhesive layer adhered to them, from the temporary adhesive layer of the semiconductor processing tape.

[00125] The present method for producing a semiconductor device is a method of using cutting half-blades.

Method (E) for producing semiconductor device

[00126] A method for producing a semiconductor device, the method including: (a) a step of laminating a surface protection tape on the front surface of a chip having a circuit pattern formed thereon; (b) a stage of irradiation of planned parts of the insert with laser light and formation regions modified by multiphotonic absorption inside the insert; (c) a further crushing step of crushing the back surface of the tablet; (d) a step of laminating the adhesive layer of the semiconductor processing tape to the back surface of the insert, in a state where the insert has been heated to 70 ° C to 80 ° C; (e) a step of separating the surface protective tape from the front surface of the tablet; (f) a step of dividing the wafer and the adhesive layer along the dividing lines, expanding the tape for semiconductor processing and obtaining a plurality of fragments attached to the adhesive film; (g) a step to eliminate any slack produced during the expansion, heating and retraction step of the parts that do not overlap the fragments in the semiconductor processing tape, and maintaining the distances between the fragments; and (h) a step of collecting the fragments having the adhesive layer adhered to them, from the temporary adhesive layer of the semiconductor processing tape.

[00127] The present method for producing a semiconductor device is a method of using invisible cut.

<Method of use>

[00128] The method of using the semiconductor processing tape 10 of the invention in a case where the tape is applied to method (A) to produce a semiconductor device as described above, will be described with reference to Fig. 2 to Fig. 5 First, as illustrated in Fig. 2, a surface protective tape 14 to protect a circuit pattern, which contains an ultraviolet-curable component in the temporary adhesive, is laminated to the front surface of a W chip having a circuit pattern formed on it, and a further grinding step of grinding the back surface of the tablet W is carried out.

[00129] After the grinding step is completed, as shown in Fig. 3, the W tablet is placed on a heating table 25 of a tablet assembler, with the front surface side facing down, and then a semiconductor processing tape 10 is laminated on the back surface of the W insert. The semiconductor processing tape 10, used here, is an adhesive tape obtained by laminating adhesive films that have been pre-cut (pre-cut) to the shape corresponding to the shape of the tablet W to be laminated and on the surface that is laminated to the tablet W, a temporary adhesive layer 12 is exposed at the periphery of the region where an adhesive layer 13 is exposed. This part, in which the adhesive layer 13 of the semiconductor processing tape 10 is exposed, and the back surface of the tablet W is laminated together, and also, the part in which the temporary adhesive layer 12 is exposed at the periphery of the adhesive layer 13 and a ring structure 20 are laminated together. At this time, the heating table 25 is set to 70 ° C to 80 ° C, and thus heating laminating is carried out. In the present embodiment, a semiconductor processing tape 10 having a temporary adhesive tape 15 composed of a substrate film 11 and a temporary adhesive layer 12 provided on the substrate film 11; and an adhesive layer 13 provided in the temporary adhesive layer 12, is used; however, it is also acceptable to use temporary tape and film-type adhesive separately. In this case, first, a film-like adhesive is laminated to the back surface of a tablet to form an adhesive layer, and a temporary adhesive layer of a temporary adhesive tape is laminated to this adhesive layer. At this time, the temporary adhesive tape 15 according to the invention is used as temporary adhesive tape.

[00130] Then, the tablet W having the laminated semiconductor processing tape 10 is removed from the heating table 25, and as illustrated in Fig. 4, the tablet W is placed on a suction table 26, with the side of the semiconductor processing tape 10 face down. Then, the surface side of the substrate of the surface protective tape 14 is irradiated with, for example, ultraviolet radiation at a dose of 1,000 mJ / cm2 using a source of energy rays 27, through the upper side of the tablet W which has been fixed by suction to the suction table 26. The adhesive strength of the surface protective tape 14 for the tablet W is decreased, and the surface protective tape 14 is separated from the surface of the tablet W.

[00131] Next, as illustrated in Fig. 5, the planned dividing parts of the W tablet are irradiated with laser light, and thus the regions 32 modified by multiphotonic absorption are formed inside the W tablet.

[00132] Next, as illustrated in Fig. 6 (a), the semiconductor processing tape 10, with which the W insert and the ring structure 20 are laminated, is placed on a platform 21 of an expansion apparatus, with the substrate film side 11 facing down.

[00133] Then, as illustrated in Fig. 6 (b), a thrust member 22 in the cylindrical shape of the expansion apparatus is lifted, in a state of having the ring structure 20 fixed, and the tape for semiconductor processing 10 is expanded (expansion). Regarding the expansion conditions, the expansion rate is, for example, from 5 to 500 mm / s, and the amount of expansion (thrust amount) is, for example, from 5 to 25 mm. As the semiconductor processing tape 10 is stretched in the direction of the diameter of the tablet W as such, the tablet W is divided into individual units of fragments 34, with the modified regions 32 acting as starting points. At this time, in the adhesive layer 13, the elongation (deformation) caused by the expansion is suppressed in the part that is adhered to the rear surface of the insert W and the fracture does not occur; however, at the positions between the fragments 34, the tension caused by the expansion of the tape is concentrated and the fracture occurs. Therefore, as illustrated in Fig. 6 (c), the adhesive layer 13 is also divided together with the tablet W. Therefore, a plurality of fragments 34 can be obtained by having the adhesive layer 13 adhered thereto.

[00134] Then, as shown in Fig. 7, the thrust element 22 is returned to the original position, and a process to eliminate any slack in the semiconductor processing tape 10 produced during the previous expansion step and thus stably maintaining the distances between fragments 34, is carried out. In this process, for example, an annular heat shrink region 28 between the ring structure 20 and the region where there is a fragment 34 in the semiconductor processing tape 10, is exposed to hot air at 40 ° C to 120 ° Using a hot air nozzle 29, in this way, the substrate film 11 is heated to retract, and the semiconductor processing tape 10 is brought to a state of tension. Subsequently, the temporary adhesive layer 12 is subjected to an energy curing treatment, thermal curing treatment or the like, and the adhesive strength of the temporary adhesive layer 12 to the adhesive layer 13 is weakened. Then, fragments 34 are collected.

[00135] The semiconductor processing tape 10 according to the present embodiment is configured to include an adhesive layer 13 in a temporary adhesive layer 12; however, the semiconductor processing tape 10 can also be configured to not include an adhesive layer 13. In this case, the semiconductor processing tape can be used to split a wafer just by laminating the wafer over the temporary adhesive wafer 12, or it is also acceptable that, when using the tape for semiconductor processing, an adhesive film produced in the same way as in the case of adhesive layer 13 is laminated to the temporary adhesive layer 12 together with the insert, and the insert and the film adhesive are divided.

<EXAMPLES>

[00136] Next, in order to better clarify the effects of the invention, Examples and Comparative Examples will be described in detail; however, the invention is not intended to be limited to these Examples.

[Tape production for semiconductor processing] (1) Production of substrate film <Substrate A film>

[00137] Spheres of resin of a zinc ionomer of a copolymer of ethylene-methacrylic acid-ethyl methacrylate synthesized by a method of radical polymerization (methacrylic acid content: 15%, ethyl methacrylate: 5%, softening point : 72 ° C, melting point: 90 ° C, density: 0.96 g / cm3, zinc ion content: 5% by mass) were melted at 230 ° C and the fused resin spheres were cast into a long film having a thickness of 150 μm using an extruder. Subsequently, the long film was stretched in the TD direction in order to adjust the thickness to 90 μm and, thus, the substrate film A was produced.

<Substrate film B>

[00138] The substrate film B was produced in the same way as in the case of substrate film A, except that the long film was produced to have a thickness of 180 μm, and the long film was stretched in the TD direction to adjust the thickness to 90 μm.

<Substrate film C>

[00139] The substrate film C was produced in the same way as in the case of substrate film A, except that the long film was produced to have a thickness of 215 μm, and the long film was stretched in the TD direction in order to adjust the thickness to 90 μm. <Substrate D Film>

[00140] Spheres of a zinc ionomer resin from an ethylene-methacrylic acid-isobutyl methacrylate copolymer synthesized by a radical polymerization method (methacrylic acid content: 11%, isobutyl methacrylate content: 9%, dot softening temperature: 64 ° C, melting point: 83 ° C, density: 0.95 g / cm3, zinc ion content: 4% by mass) were melted at 230 ° C and the melted resin spheres were cast into a film long having a thickness of 150 μm using an extruder. Subsequently, the long film was stretched in the TD direction in order to adjust the thickness to 90 μm and, thus, the substrate film D was produced. <E substrate film>

[00141] The resin spheres obtained by mixing a hydrogenated thermoplastic elastomer based on styrene and homopropylene (PP) in a mixing ratio of 52:48 were melted at 200 ° C, and the fused resin spheres were cast in a long film having a thickness of 150 μm using an extruder. Subsequently, the long film was stretched in the TD direction in order to adjust the thickness to 90 μm, and thus, the substrate film E was produced. <Substrate film F>

[00142] The resin spheres obtained by mixing a hydrogenated thermoplastic elastomer based on styrene and homopropylene (PP) in a mixing ratio of 64:36 were melted at 200 ° C, and the fused resin spheres were cast in a long film having a thickness of 150 μm using an extruder. Subsequently, the long film was stretched in the TD direction in order to adjust the thickness to 90 μm and, thus, the substrate film F was produced.

<G substrate film>

[00143] The substrate film G was produced in the same way as in the case of substrate film A, except that the long film was produced to have a thickness of 150 μm, and the long film was stretched in the MD direction in order to adjust the thickness to 90 μm.

<H Substrate Film>

[00144] The substrate film H was produced in the same way as in the case of substrate film D, except that the long film was produced to have a thickness of 150 μm, and the long film was stretched in the MD direction in order to adjust the thickness to 90 μm.

<Substrate I Film>

[00145] The substrate film I was produced in the same way as in the case of substrate film A, except that the long film was produced to have a thickness of 90 μm, and the long film was not subjected to a treatment stretching.

<J substrate film>

[00146] The substrate film J was produced in the same way as in the case of substrate film D, with the difference that the long film was produced to have a thickness of 90 μm and the long film was not subjected to a treatment of stretching.

<Cinematographic substrate K>

[00147] The substrate film K was produced in the same way as in the case of substrate film E, except that the long film was produced to have a thickness of 90 μm and the long film was not subjected to an elongation treatment. <L substrate film>

[00148] The substrate film K was produced in the same way as in the case of substrate film F, except that the long film was produced to have a thickness of 90 μm, and the long film was not subjected to a treatment stretching. <M substrate film>

[00149] The substrate film M was produced in the same way as in the case of substrate film A, except that the long film was produced to have a thickness of 110 μm, and the long film was stretched in the TD direction in order to adjust the thickness to 90 μm. <Substrate film N>

[00150] The substrate film N was produced in the same way as in the case of substrate film A, except that the long film was produced to have a thickness of 120 μm, and the long film was stretched in the TD direction in order to adjust the thickness to 90 μm.

(2) Production of acrylic copolymer

[00151] As an acrylic copolymer (A1) having functional groups, a copolymer of 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid is formed, the copolymer having a proportion of 2-ethylhexyl acrylate of 60 mol% and an average molecular weight of 700,000, was produced. Then, 2-isocyanatoethyl methacrylate is added in order to obtain an iodine value of 25 and thus an acrylic copolymer having a glass transition temperature of -50 ° C, a hydroxyl group value of 10 mg KOH / g and an acid value of 5 mg KOH / g was produced.

(3) Production of adhesive composition

[00152] To a composition including 40 parts by mass of an epoxy resin, "1002" (manufactured by Mitsubishi Chemical Corp., epoxy resin of the type bisphenol A solid, epoxy equivalent: 600); 100 parts by mass of an epoxy resin, "806" (manufactured by Mitsubishi Chemical Corp., trade name, epoxy resin type bisphenol F, epoxy equivalent: 160, specific weight: 1.20); 5 parts by mass of a curing agent, "DYHARD 100SF" (manufactured by Degussa AG, trade name, dicyandiamide); 200 parts by mass of a silica filler, "SO-C2" (manufactured by Admatechs Co., Ltd., trade name, average particle size: 0.5 μm); and 3 parts by mass of a silica filler, "AEROSIL R972" (manufactured by Nippon Aerosil Co., Ltd., trade name, average primary particle size particle size: 0.016 μm), MEK was added, and the mixture was stirred and mixed. Thus, a uniform composition was obtained.

[00153] To this, 100 parts by mass of a phenoxy resin, "PKHH" (manufactured by InChem Corp., commercial name, mass average molecular weight: 52,000, glass transition temperature: 92 ° C); 0.6 parts by mass of "KBM-802" (manufactured by Shin-Etsu Silicone Co., Ltd., trade name, mercaptopropyltrimethoxysilane) as a coupling agent; and 0.5 parts by mass of "CUREZOL 2PHZ-PW" (manufactured by Shikoku Chemical Corp., trade name, 2-phenyl-4,5-dihydroxymethylimidazole, decomposition temperature: 230 ° C) as a curing accelerator were added, and the mixture was stirred and mixed until uniform. This was further filtered through a 100 mesh filter, and was subjected to vacuum foam removal. Thus, a varnish of an adhesive composition was obtained.

<Example 1>

[00154] A mixture obtained by adding 5 parts by weight of CORONATE L (manufactured by Nippon Polyurethane Industry Co., Ltd.) as a polyisocyanate and 3 parts by weight of ESACURE KIP 150 (manufactured by Lamberti SpA) as a initiator of photopolymerization to 100 parts by weight of the acrylic copolymer, it was dissolved in ethyl acetate and the solution was stirred. Thus, a temporary adhesive composition was produced.

[00155] Then, this temporary adhesive composition was applied to a release coating formed from a film of polyethylene terephthalate treated with release to obtain a thickness after drying of 10 μm. The temporary adhesive composition was dried for 3 minutes at 110 ° C and then laminated with a substrate film. Thus, a temporary adhesive sheet was produced, in which a temporary adhesive layer was formed on a substrate film.

[00156] Then, the adhesive composition mentioned above was applied to a release coating formed from a release treated polyethylene terephthalate film to obtain a thickness after drying of 20 μm and the adhesive composition was dried for 5 minutes. at 110 ° C. Thus, an adhesive film was produced, in which an adhesive layer was formed on a release liner.

[00157] The temporary adhesive sheet was cut as shown in Fig.3 and the like, detailing how the temporary adhesive sheet can be attached to a ring structure so as to cover the opening. In addition, the adhesive film was cut in the form shown in Fig. 3 and the like, so that the adhesive film could cover the back surface of a tablet. Then, the temporary adhesive layer side of the temporary adhesive sheet and the adhesive layer side of the adhesive film were laminated together, such that the parts where the temporary adhesive layer 12 was exposed on the periphery of the adhesive film, as illustrated in Fig .3 thus, and thus, a semiconductor processing tape was produced.

<Examples 2 to 8 and Comparative Examples 1 to 6>

[00158] The tapes for semiconductor processing related to Examples 2 to 8 and Comparative Examples 1 to 6 were produced by the same technique used in Example 1, with the exception of using the substrate films described in Table 1.

[00159] Each of the temporary tapes of the semiconductor processing tapes related to Examples and Comparative Examples has been cut to a length of 24 mm (direction, in which the amount of deformation must be measured) and a width of 5 mm (direction orthogonally crossing the direction, in which the amount of deformation must be measured), and the cutting tape was used as a specimen. For the specimens thus obtained, the temperature-induced deformation in two directions, namely, MD and TD, was measured using a thermomechanical testing machine (manufactured by Rigaku Corp., trade name: TMA8310) by a loading method under the following measurement conditions. (Measurement conditions) Measurement temperature: -60 ° C to 100 ° C Temperature increase rate: 5 ° C / min Measurement load: 19.6 mN Gas atmosphere: nitrogen atmosphere (100 ml / min) Sampling : 0.5 s Distance between chucks: 20 mm

[00160] Then, the thermal deformation rate was calculated by the following formula (1), and the differential values of the thermal deformation rates in the MD direction and in the TD direction, respectively, by 1 ° C between 40 ° C and 80 ° C have been determined. Thus, the sum of the differential values was calculated. The results are shown in Tables 1 and 2. Thermal strain rate TMA (%) = (Displacement in sample length / sample length before measurement) X 100 (1)

[Fragment recognition error assessment]

[00161] For the various semiconductor processing tapes of the Examples and the Comparative Examples described above, one chip was divided into fragments, and the fragment recognition error was assessed by the method described below.

[00162] The following steps were performed: (a) a step of laminating a surface protection tape on the front surface of a tablet having a circuit pattern formed on it; (b) a stage of irradiation of planned parts of the insert with laser light and formation regions modified by multiphotonic absorption inside the insert; (c) a further crushing step of crushing the back surface of the tablet; (d) a step of laminating the adhesive layer of the semiconductor processing tape to the back surface of the wafer in a state where the wafer has been heated to 70 ° C to 80 ° C; (e) a step of separating the surface protective tape from the front surface of the tablet; (f) a step of dividing the wafer and the adhesive layer along the dividing lines, expanding the tape for semiconductor processing and obtaining a plurality of fragments attached to the adhesive film; (g) a step of eliminating any gap produced in the expansion step of (f), heating and shrinking of the parts that do not overlap the fragments in the semiconductor processing tape (annular shaped regions formed between the ring structure and the region where there is a fragment), and maintaining the distances between the fragments; and (h) a step of collecting the fragments having the adhesive layer adhered to them from the temporary adhesive layer of the semiconductor processing tape.

[00163] In step (d), the wafer was laminated to the tape for semiconductor processing in such a way that the dividing lines of the wafer conformed to the MD direction and the TD direction of the substrate film.

[00164] In step (f), the expansion was performed with the DDS2300 manufactured by Disco Corp., pressing a cut ring structure that was laminated to the semiconductor processing tape, using a DDS2300 expansion ring manufactured by Disco Corp. . and thus pressing the part that did not overlap the insert on the outer periphery of the laminated place of the tape insert for semiconductor processing, against a circular thrust element. In addition, in relation to the conditions of step (f), the amount of expansion was adjusted in order to obtain an expansion rate of 300 mm / s and an expansion height of 10 mm. Here, the amount of expansion refers to the amount of change in the relative positions between the ring structure and the thrust member before pressing down and after pressing down. The size of the fragment was adjusted to 1 X 1 mm on the sides.

[00165] In step (g), the expansion was performed again under the conditions of an expansion rate of 1 mm / sec and an expansion height of 10 mm at room temperature, and then a heat shrink treatment was performed. carried out under the following conditions. [Conditions 1] Set the heater temperature: 220 ° C Amount of hot air: 40 L / min Distance between heater and tape for semiconductor processing: 20 mm Rotation speed of the heater: 7 ° C / s [Conditions 2] Set heater temperature: 220 ° C Hot air quantity: 40 L / min Distance between heater and tape for semiconductor processing: 20 mm Heater rotation speed: 5 ° / s

[00166] Regarding the semiconductor processing tapes of Examples 1 to 8 and Comparative Examples 1 to 6, the collection was performed after step (g), and the fragment recognition error was defined such that the fragments could not be properly recognized, since the boundaries with adjacent fragments could not be distinguished, and the fragments could not be collected. The frequency of occurrence of this fragment recognition error was assessed. A tape in which, the frequency of occurrence of fragment recognition error under both conditions 1 and conditions 2 of step (g), described above, was 0%, was considered an excellent product and was classified as "©" ; a tape, in which the frequency of occurrence of fragment recognition error under conditions 2 was less than 1%, was considered a good product and was classified as "O"; a tape, in which the frequency of occurrence of fragment recognition error under conditions 2 was 1% or greater and less than 3%, was considered an acceptable product and was classified as ""; and a tape, in which the frequency of occurrence of fragment recognition error in conditions 1 and conditions 2 was 3% or greater was considered as a defective product and was classified as "X". The results are shown in Tables 1 and 2.

[Tabela 2]

[00167] During the evaluation, as shown in Fig. 8, one hundred fragments were collected for evaluation from each site in the vicinity of a non-defective fragment 50a at the far right end in the MD direction of the temporary adhesive tape in Fig. 8, and similarly , in the vicinity of a flawless fragment 50b at the left most end in the MD direction of the temporary adhesive tape in Fig. 8, in the vicinity of flawless fragments 51 at the two most distant ends in the TD direction of the temporary tape, and in the vicinity of a fragment 52 positioned in the center. [TABLE 1]

[Table 2]

[00168] As shown in Table 1, with respect to tapes for semiconductor processing related to Examples 1 to 8, the sum of the average value of the differential value of the thermal deformation rate in the MD direction of the temporary tape by 1 ° C between 40 ° C and 80 ° C measured at the time of raising the temperature by means of a thermomechanical testing machine, and the average value of the differential value of the thermal deformation rate in the TD direction by 1 ° C between 40 ° C and 80 ° C measured at the time of raising the temperature using a thermomechanical testing machine, was a negative value. Therefore, the limits with the adjacent fragments could be easily distinguished, and the frequency of occurrence of fragment recognition error during image recognition at the time of collection is low. Thus, satisfactory results were obtained.

[00169] On the other hand, with respect to the semiconductor processing tapes related to Comparative Examples 1 to 6, as shown in Table 2, the sum of the average value of the differential value of the thermal deformation rate in the MD direction of the tape temporary adhesive by 1 ° C between 40 ° C and 80 ° C measured at the time of temperature increase by means of a thermomechanical testing machine, and the average value of the differential value of the thermal deformation rate in the TD direction by 1 ° C between 40 ° C and 80 ° C measured at the time of temperature increase using a thermomechanical testing machine, was not a negative value. Therefore, the frequency of occurrence of fragment recognition error was high and insufficient results were obtained. LETTERS OR NUMERAL EXPLANATIONS 10 SEMICONDUCTOR PROCESSING TAPE 11 SUBSTRATE FILM 12 TEMPORARY ADHESIVE LAYER 22 ADHESIVE LAYER 28 EMBEDDING MEMBER 28 HEAT RETREAT REGION 29 HOT AIR NOZZLE

Claims (4)

1. Semiconductor processing tape (10), characterized by comprising a temporary adhesive tape (15) having a substrate film (11); and a temporary adhesive layer (12) formed on at least one side of the substrate film surface, in which, in relation to the temporary adhesive tape, the sum of the average value of the differential value of the thermal deformation rate in the MD direction by 1 ° C between 40 ° C and 80 ° C measured at the time of temperature increase using a thermomechanical testing machine, and the average value of the differential value of the thermal deformation rate in the TD direction by 1 ° C between 40 ° C and 80 ° C measured at the time of increasing the temperature using a thermomechanical testing machine, is a negative value and the semiconductor processing tape is used for semiconductor processing, including an expansion process to expand the temporary adhesive tape . 2. Semiconductor processing tape (10), characterized by comprising a temporary adhesive tape (15) having a substrate film (11); and a temporary adhesive layer (12) formed on at least one side of the substrate film surface, wherein the substrate film is formed from an ionomer resin or a mixed resin composition of polypropylene and styrene-butadiene copolymer. , which in relation to the temporary adhesive tape, the sum of the average value of the differential value of the thermal deformation rate in the MD direction per 1 ° C between 40 ° C and 80 ° C measured at the time of temperature increase by means of a machine of thermomechanical characteristics test, and the average value of the differential value of the thermal deformation rate in the TD direction by 1 ° C between 40 ° C and 80 ° C measured at the time of increasing the temperature by means of a thermomechanical characteristics test machine , is a negative value. Semiconductor processing tape (10) according to claim 1 or 2, characterized in that an adhesive layer (13) is laminated on the side of the temporary adhesive layer (12). 4. Semiconductor processing tape (10) according to any one of claims 1 to 3, characterized in that the semiconductor processing tape is used to cut blades with full cut and half cut, laser cut or invisible cut using a laser.

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