TW202004887A - Dicing die-adhering film and method of manufacturing semiconductor device includes a die-adhering step for a semiconductor chip with an adhesive layer obtained through the expansion step implemented using dicing die-adhering film (DDAF) - Google Patents

Abstract

The subject of the invention is to provide a dicing die-adhering film (DDAF) and method of manufacturing a semiconductor device. The DDAF has an adhesive layer taken as a die-adhesive film suitable for suppressing the die-adhering step and subsequent floating of the chip. The DDAF of the invention includes a dicing tape 10 and an adhesive layer 20. The adhesive layer 20 is in close contact with the adhering agent layer 12 of the dicing tape 10. The adhesive layer 20 presents a 180-degree peeling adhesive force of 0.5 to 5N/10mm on the Si plane in the first peeling test (100 DEG Celsius, 180 degree peeling angle, 30 mm/minute peeling rate). In addition, the adhesive layer 20 presents a 180-degree peeling adhesive force of 3 to 15 N/10mm on the Si plane in the second peeling test (23 DEG Celsius, 180 degree peeling angle, 30 mm/minute peeling rate). The method of manufacturing semiconductor device according to invention includes a die-adhering step for a semiconductor chip with an adhesive layer obtained through the expansion step implemented using such DDAF.

Description

Crystal-cut crystal bonding film and method for manufacturing semiconductor device

The invention relates to a die-cut die-bonding film which can be used in the manufacturing process of a semiconductor device and a manufacturing method of a semiconductor device.

In the manufacturing process of a semiconductor device, in order to obtain a semiconductor wafer with a bonding film of a size equivalent to a die-bonding wafer, that is, a semiconductor wafer with a die-bonding film, a die-cut die-bonding film may be used. The die-bonding die-bonding film has a size corresponding to the semiconductor wafer to be processed, for example, it has a die-cutting tape including a base material and an adhesive layer, and a die-bonding film (adhesive) that is peelably adhered to the side of the adhesive layer Floor).

As a method for obtaining a semiconductor wafer with a viscous crystal film by using a vitrified crystal film, there is known a method of cutting the viscous film through the step of expanding the vitrified film or the dicing tape. In this method, first, a semiconductor wafer is bonded on the die-bonding film of the dicing die-bonding film. The semiconductor wafer is processed, for example, in such a manner that it can be cut together with the crystal bonding film and singulated into a plurality of semiconductor wafers. Secondly, in order to cut off the viscous film in such a way that a plurality of die-bonding film pieces each in close contact with the semiconductor wafer are generated from the viscous film on the dicing tape, an expansion device is used to expand the dicing film or the dicing tape. In this expansion step, the portion of the die-bonding film that corresponds to the cut-off portion is also cut in the semiconductor wafer on the die-bonding film, and the semiconductor wafer is singulated on the die-cut die-bonding film or die-cutting tape It is a plurality of semiconductor wafers. Secondly, for example, after a cleaning step, each semiconductor wafer is lifted by the pin member of the pick-up mechanism from the lower side of the dicing tape together with the die-bonding film of the same size as the wafer adhering to it, and then picked up from the dicing tape. In this way, a semiconductor wafer accompanied by a crystal bonding film is obtained. The semiconductor wafer with the die-bonding film is fixed to the adherend such as the mounting substrate by die-bonding through the die-bonding film (die bonding step). For example, the technology related to the die-cut die-bonding film used as described above is described in Patent Documents 1 to 3 below, for example. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2007-2173 [Patent Document 2] Japanese Patent Laid-Open No. 2010-177401 [Patent Document 3] Japanese Patent Laid-Open No. 2012-23161

[Problems to be solved by the invention]

The thinner the semiconductor wafer is, the easier it is to warp. The reason for this is that semiconductor wafers contain a plurality of materials with significantly different thermal expansion rates and are manufactured through various thermal processes. For example, in the die bonding step, the thinner the semiconductor wafer, the dimensional change caused by thermal expansion in the semiconductor wafer during the high temperature heating process for die bonding is likely to induce bending deformation of the wafer in the thickness direction. Therefore, the thinner the semiconductor wafer bonded to the die-bonding film, the thinner the semiconductor wafer with the die-bonding film obtained by the above method is, the easier it is to warp during the die-bonding step.

In addition, the thinner the semiconductor wafer bonded to the dicing die-bonding film, the thinner semiconductor wafer with the die-bonding film obtained by the above method will undergo the die-bonding step even if it does not warp In this case, after this step, for example, in a state where the temperature is lowered to room temperature, warpage is more likely to occur. It is considered that the thinner the semiconductor wafer is, the more easily the dimensional change caused by shrinkage in the semiconductor wafer during the cooling process after the crystal bonding step induces the bending deformation of the wafer in the thickness direction.

The present invention was conceived based on the circumstances as described above, and its object is to provide a die-bonding die-bonding film provided as a semiconductor wafer suitable for suppressing the rise of the semiconductor wafer in the die-bonding step and suitable for suppressing the semiconductor after the die-bonding step Adhesive layer of the floating die-bonding film of the wafer. Another object of the present invention is to provide a method for manufacturing a semiconductor device using such a die-cut crystal bonding film. [Technical means to solve the problem]

According to the first aspect of the present invention, there is provided a die-cut crystal bonding film. The die-cut die-bonding film has a die-cutting tape and an adhesive layer as the die-bonding film. The dicing tape has a laminated structure including a base material and an adhesive layer. Then the adhesive layer and the adhesive layer in the dicing tape are peelably and tightly adhered. The adhesive layer exhibited a 180° peeling adhesion of 0.5 to 5 N/10 mm in the peeling test (first peeling test) under the conditions of 100° C., a peeling angle of 180°, and a peeling speed of 30 mm/min. The adhesive force is preferably 0.6 to 3 N/10 mm, and more preferably 0.7 to 2 N/10 mm. At the same time, the adhesive layer exhibited 180° of 3～15 N/10 mm in the peeling test (second peeling test) under the conditions of 23°C, peeling angle 180° and peeling speed 30 mm/min on the silicon plane. Peel adhesion. The adhesive force is preferably 3.2 to 12 N/10 mm, and more preferably 3.4 to 10 N/10 mm. These adhesion forces are measured by peeling tests on the adhesive layer before hardening. The die-cut die-bonding film with such a structure can be used for the semiconductor wafer with the die-bonding film (adhesive layer) through the expansion step as described above during the manufacturing process of the semiconductor device.

As mentioned above, the adhesive layer of the die-bonding film as the original die-cutting die-bonding film exhibited 180° peeling to the silicon plane in the first peeling test (100°C, peeling angle 180°, peeling speed 30 mm/min) The adhesive force (first adhesive force) is 0.5 to 5 N/10 mm, preferably 0.6 to 3 N/10 mm, and more preferably 0.7 to 2 N/10 mm. Such a configuration is suitable for, for example, ensuring the bonding state between the adhesive layer and the semiconductor wafer under high temperature conditions in the die bonding step of the semiconductor wafer with the adhesive layer obtained through the expansion step described above to suppress the semiconductor The rise of the wafer. For example, as shown in the following examples and comparative examples.

As mentioned above, the adhesive layer of the die-bonding film as the original die-cutting die-bonding film exhibited 180° peeling to the silicon plane in the second peeling test (23°C, peeling angle 180°, peeling speed 30 mm/min) The adhesive force (second adhesive force) is 3 to 15 N/10 mm, preferably 3.2 to 12 N/10 mm, and more preferably 3.4 to 10 N/10 mm. This structure is suitable for ensuring the bonding state between the adhesive layer and the semiconductor wafer that maintain the bonding state in the bonding step and the semiconductor wafer after the crystal cutting step or at room temperature, and suppressing the floating of the semiconductor wafer. For example, as shown in the following examples and comparative examples.

As described above, the die-cut die-bonding film is suitable for suppressing the rise of the semiconductor wafer during the die-bonding step of the semiconductor wafer with the adhesive layer attached, and is suitable for suppressing the rise of the semiconductor wafer after the die-bonding step.

The conditions of the adhesive layer of this die-cut adhesive film to the adhesive layer test piece with a width of 10 mm and a thickness of 200 μm at the initial chuck distance of 22.5 mm, frequency of 1 Hz, dynamic strain of 0.005% and heating rate of 10℃/min The loss elastic modulus at 100°C measured below is preferably 0.1 to 0.5 MPa, more preferably 0.12 to 0.45 MPa. Such a configuration is preferable in terms of achieving the first adhesive force while ensuring the wettability at 100° C. and its vicinity in the adhesive layer. The loss elastic modulus can be obtained based on dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring device.

The conditions of the adhesive layer of this die-cut adhesive film to the adhesive layer test piece with a width of 10 mm and a thickness of 200 μm at the initial chuck distance of 22.5 mm, frequency of 1 Hz, dynamic strain of 0.005% and heating rate of 10℃/min The maximum value of the loss tangent measured in the range of 25 to 50°C is 0.8 or more. Such a configuration is preferable in terms of ensuring the wettability at 25 to 50° C. and its vicinity in the adhesive layer to achieve the second adhesive force. The loss tangent can be obtained based on dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring device.

The adhesive layer of this die-cut adhesive film exhibited 5 N/10 mm or more in the peeling test (third peeling test) under the conditions of -15℃, peeling angle 180° and peeling speed 30 mm/min on the silicon plane 180° peel adhesion. The adhesive force is preferably 5.5 N/10 mm or more, and more preferably 6 N/10 mm or more. Such a configuration is to suppress the generation between the adhesive layer and the semiconductor wafer in this step when the above expansion step accompanied by the cutting of the adhesive layer as a viscous film is performed at a low temperature of -10°C or lower, for example The peeling is preferable.

The weight reduction rate of the adhesive layer of this die-cut adhesive film under a nitrogen atmosphere, a reference weight temperature of 23°C±2°C and a heating rate of 10°C/min at 100°C in the weight loss measurement is 0.8% or less, It is preferably 0.6% or less, and more preferably 0.5% or less. Such a configuration is preferable from the viewpoint of suppressing the decrease in the adhesive force of the adhesive layer caused by contamination of the semiconductor wafer caused by the outgassing component from the adhesive layer. The weight reduction rate of the adhesive layer can be measured using a differential thermal-thermogravimetric simultaneous measuring device, for example.

It is preferable that the adhesive layer of the die-cut adhesive film contains a resin and a filler, and the resin contains 50 to 95% by mass of acrylic resin and thermosetting resin. Such a configuration is preferable from the viewpoint of the balance between the wettability and holding power of the adhesive layer on the semiconductor wafer in the process at a high temperature of about 100°C, for example. The weight average molecular weight of the acrylic resin is preferably 500,000 or less, more preferably 480,000 or less, and still more preferably 450,000 or less. Such a configuration is preferable from the viewpoint of the balance between the wettability and holding power of the adhesive layer on the semiconductor wafer in the process at a high temperature of about 100°C, for example. In addition, the filler content ratio of the adhesive layer is preferably 35 to 60% by mass, more preferably 40 to 55% by mass, and even more preferably 42 to 52% by mass. Such a configuration is preferable in terms of striking the balance between the cutting property and the cohesive force in the expansion step in the adhesive layer.

According to a second aspect of the present invention, a method for manufacturing a semiconductor device is provided. The semiconductor device manufacturing method includes at least the first step, the second step, and the third step described below. In the first step, a semiconductor wafer capable of being singulated into a plurality of semiconductor wafers or including a plurality of semiconductor wafers is bonded on the side of the adhesive layer in the above-mentioned die cut adhesive film of the first aspect of the present invention Of semiconductor wafers. In the second step, the semiconductor wafer with the adhesive layer is obtained by expanding the dicing die-bonding film and cutting the adhesive layer. The temperature condition in the second step is preferably 0°C or lower. In the third step (die bonding step), the semiconductor wafer with the adhesive layer is bonded to the substrate or other semiconductor wafers. The method of manufacturing a semiconductor device using the above-mentioned die-cut die-bonding film of the first aspect of the present invention is suitable for suppressing the rise of the semiconductor wafer in the die-bonding step, and suitable for suppressing the rise of the semiconductor wafer after the die-bonding step .

FIG. 1 is a schematic cross-sectional view of a die-cut adhesive film X according to an embodiment of the present invention. The die-cut die-bonding film X has a laminated structure including a die-cutting tape 10 and an adhesive layer 20 as a die-bonding film. The dicing tape 10 has a laminated structure including a base material 11 and an adhesive layer 12. The adhesive layer 12 has an adhesive surface 12a on the adhesive layer 20 side. Next, the adhesive layer 20 includes a work bonding area, and is in peelable adhesion with the adhesive layer 12 of the dicing tape 10 or its adhesive surface 12a. The die-bonding die-bonding film X can be used in the expansion step described below, for example, in the process of obtaining a semiconductor wafer with a die-bonding film when manufacturing a semiconductor device. Moreover, the die-bonding film X has a disc shape with a size corresponding to the semiconductor wafer to be processed in the manufacturing process of the semiconductor device, and its diameter is, for example, in the range of 345 to 380 mm (12-inch wafer corresponding type) ), within the range of 245 to 280 mm (8 inch wafer corresponding type), within the range of 195 to 230 mm (6 inch wafer corresponding type) or within the range of 495 to 530 mm (18 inch wafer corresponding type) type).

The base material 11 of the dicing tape 10 is an element that functions as a support in the dicing tape 10 or the dicing die-bonding film X. The substrate 11 is, for example, a plastic substrate, and as the plastic substrate, a plastic film can be preferably used. Examples of the constituent material of the plastic substrate include polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, and polyimide, Polyether amide imide, poly amide, fully aromatic poly amide, polyphenylene sulfide, aromatic poly amide, fluororesin, cellulose resin and polysiloxane resin. Examples of polyolefins include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, and block copolymerized polypropylene , Homopolypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymerization , Ethylene-butene copolymer and ethylene-hexene copolymer. Examples of the polyester include polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT). The substrate 11 may include one kind of material, or two or more kinds of materials. The base material 11 may have a single-layer structure or a multi-layer structure. In addition, when the base material 11 includes a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a biaxially stretched film. When the adhesive layer 12 on the base material 11 has ultraviolet curability as described below, it is preferable that the base material 11 has ultraviolet transmittance.

In the case where the dicing tape 10 or the substrate 11 is shrunk by partial heating during the use of the dicing die-bonding film X, for example, the substrate 11 preferably has heat shrinkability. From the viewpoint of ensuring good heat shrinkability in the base material 11, it is preferable that the base material 11 contains an ethylene-vinyl acetate copolymer as a main component. The main component of the base material 11 is a component that accounts for the largest mass ratio among the base component components. In addition, in the case where the substrate 11 includes a plastic film, in order to achieve isotropic thermal shrinkage of the dicing tape 10 or the substrate 11, the substrate 11 is preferably a biaxially stretched film. The heat shrinkage rate in the heat treatment test performed on the dicing tape 10 or the substrate 11 under the conditions of a heating temperature of 100° C. and a heat treatment time of 60 seconds is, for example, 2 to 30%.

The surface of the substrate 11 on the side of the adhesive layer 12 may be subjected to physical treatment, chemical treatment, or primer treatment to improve the adhesion with the adhesive layer 12. Examples of the physical treatment include corona treatment, plasma treatment, sand cushion processing, ozone exposure treatment, flame exposure treatment, high-voltage electric shock exposure treatment, and ionizing radiation treatment. Examples of the chemical treatment include chromic acid treatment. The treatment for improving the adhesion is preferably performed on the entire surface of the substrate 11 on the adhesive layer 12 side.

From the viewpoint of ensuring the strength for the substrate 11 to function as a support in the dicing tape 10 or the dicing die-bonding film X, the thickness of the substrate 11 is preferably 40 μm or more, more preferably 50 μm Above, more preferably 55 μm or more, and more preferably 60 μm or more. Also, from the viewpoint of achieving moderate flexibility in the dicing tape 10 or the dicing die-bonding film X, the thickness of the substrate 11 is preferably 200 μm or less, more preferably 180 μm or less, and still more preferably 150 Below μm.

The adhesive layer 12 of the dicing tape 10 contains an adhesive. The adhesive can be an adhesive that can be intentionally reduced by external effects such as radiation or heating (adhesive-reducing adhesive), or it can be hardly or completely not affected by external effects. Reduced adhesive (non-decreased adhesive). Regarding the use of adhesive-reducing adhesives or non-adhesive-reducing adhesives as the adhesive in the adhesive layer 12, the method of singulation of semiconductor wafers that are singulated using diced die-bonding film X or The use conditions of the die-cut crystal bonding film X such as conditions are appropriately selected.

In the case of using an adhesive-reducing adhesive as the adhesive in the adhesive layer 12, during the use of the die-cut adhesive film X, the adhesive layer 12 can exhibit a relatively high adhesive state, It can be used in a state that exhibits relatively low adhesion. For example, when the die-cut adhesive film X is used in the following expansion step, the high adhesive state of the adhesive layer 12 can be used to suppress and prevent the swell or peeling of the adhesive layer 20 from the adhesive layer 12, on the other hand, Thereafter, in the following pickup step for picking up the semiconductor wafer of the adhesive layer from the dicing tape 10 of the dicing die-bonding film X, it is used to easily pick up the semiconductor wafer of the adhesive layer from the adhesive layer 12 Low adhesion state of the adhesive layer 12.

Examples of such adhesive-reducing adhesives include radiation-curing adhesives (radiation-curing adhesives) and heat-foaming adhesives. In the adhesive layer 12 of the present embodiment, one type of adhesive-reducing adhesive may be used, or two or more types of adhesive-reducing adhesives may be used. In addition, the whole of the adhesive layer 12 may be formed of a pressure-reducing adhesive, or a part of the adhesive layer 12 may be formed of a pressure-reducing adhesive. For example, in the case where the adhesive layer 12 has a single-layer structure, the entire adhesive layer 12 may be formed of an adhesive reduction type adhesive, or a specific portion of the adhesive layer 12 may be formed of an adhesive reduction type adhesive. The other parts are formed by non-decreasing adhesive. In addition, in the case where the adhesive layer 12 has a laminated structure, all the layers that can form the laminated structure are formed by the adhesive with reduced adhesion, or a part of the layers in the laminated structure may be formed with the adhesive with reduced adhesive.

As the radiation-curable adhesive in the adhesive layer 12, for example, an adhesive that is hardened by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X rays can be used, and it is particularly preferable to use Adhesive of the type hardened by ultraviolet irradiation (ultraviolet hardening adhesive).

Examples of the radiation-curable adhesive in the adhesive layer 12 include an additive radiation-curable adhesive, which contains a base polymer such as an acrylic polymer as an acrylic adhesive, and a carbon-carbon having radiation polymerization Radiation polymerizable monomer component or oligomer component of double bond and other functional groups.

The acrylic polymer preferably contains monomer units derived from acrylate and/or methacrylate as the most monomer units in terms of mass ratio. Hereinafter, "(meth)acrylic acid" means "acrylic acid" and/or "methacrylic acid", and "(meth)acrylate" means "acrylate" and/or "methacrylate".

Examples of (meth)acrylates used as monomer units for forming acrylic polymers include alkyl (meth)acrylates, cycloalkyl (meth)acrylates, and aryl (meth)acrylates. Etc. containing hydrocarbon group (meth) acrylate. Examples of alkyl (meth)acrylates include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, second butyl, and third butyl (meth)acrylate. Amyl, isoamyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl, deca Trialkyl ester, myristyl ester, hexadecyl ester, octadecyl ester and eicosyl ester. Examples of cycloalkyl (meth)acrylates include cyclopentyl (meth)acrylate and cyclohexyl ester. Examples of aryl (meth)acrylates include phenyl (meth)acrylate and benzyl (meth)acrylate. As the monomer component for forming the monomer unit of the acrylic polymer, one (meth)acrylate may be used, or two or more (meth)acrylates may be used. As the (meth)acrylate used to form the monomer unit of the acrylic polymer, it is preferably an alkyl (meth)acrylate having an alkyl group of 8 or more carbon atoms, more preferably 2-ethylhexyl acrylate Ester and dodecyl acrylate. In addition, in order to appropriately express the basic characteristics such as the adhesion brought by (meth)acrylate in the adhesive layer 12, the ratio of (meth)acrylate in all monomer components used to form the acrylic polymer It is preferably 40% by mass or more, and more preferably 60% by mass or more.

The acrylic polymer may contain monomer units derived from other monomers copolymerizable with (meth)acrylate in order to modify its cohesive strength, heat resistance, and the like. Examples of such other monomers include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide and propylene Functional monomers such as nitrile. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, 2-carboxyethyl (meth)acrylate, 5-carboxypentyl (meth)acrylate, itaconic acid, maleic acid, and fumaric acid. Oxalic acid and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and 6-(meth)acrylate. Hydroxyhexyl, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxydodecyl (meth)acrylate and (4-hydroxymethyl) (meth)acrylate Cyclohexyl) methyl ester. Examples of the glycidyl group-containing monomer include glycidyl (meth)acrylate and methylglycidyl (meth)acrylate. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, and (meth)acrylamide propanesulfonate. Acid and sulfopropyl (meth)acrylate. Examples of phosphoric acid group-containing monomers include 2-hydroxyethyl acryl acetyl phosphate. As the other copolymerizable monomer used in the acrylic polymer, one kind of monomer may be used, or two or more kinds of monomers may be used.

In order to form a cross-linked structure in its polymer backbone, the acrylic polymer may also contain monomer units derived from a multifunctional monomer that can be copolymerized with monomer components such as (meth)acrylate. Examples of such multifunctional monomers include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, Neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(methyl) Acrylic esters, poly(meth)acrylic acid glycidyl esters, polyester (meth)acrylic acid esters and (meth)acrylic acid carbamates. As the monomer component for the acrylic polymer, one type of multifunctional monomer may be used, or two or more types of multifunctional monomers may be used. In order to properly express the basic characteristics such as the adhesion brought about by (meth)acrylate in the adhesive layer 12, the ratio of the polyfunctional monomer in all the monomer components used to form the acrylic polymer is preferably 40% by mass or less, more preferably 30% by mass or less.

The acrylic polymer can be obtained by polymerizing raw material monomers used to form it. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of a high degree of cleanliness in a semiconductor device manufacturing method using the dicing tape 10 or the dicing adhesive film X, the adhesive layer 12 in the dicing tape 10 or the crystalline die bonding film X is preferable Among them, there are few low molecular weight substances, and the weight average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3,000,000.

In order to increase the weight average molecular weight of the base polymer such as acrylic polymer, the adhesive layer 12 or the adhesive used to form it may contain an external crosslinking agent, for example. Examples of the external crosslinking agent that reacts with a base polymer such as an acrylic polymer to form a crosslinked structure include polyisocyanate compounds, epoxy compounds, polyol compounds (polyphenolic compounds, etc.), aziridine Compound and melamine-based crosslinking agent. The content of the external crosslinking agent in the adhesive layer 12 or the adhesive used to form it is preferably 6 parts by mass or less relative to 100 parts by mass of the base polymer, and more preferably 0.1 to 5 parts by mass.

Examples of the above-mentioned radiation-polymerizable monomer component for forming a radiation-curable adhesive include, for example, (meth)acrylic acid carbamate, trimethylolpropane tri(meth)acrylate, and pentaerythritol tri(meth) Base) acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate . Examples of the radiation-polymerizable oligomer component used to form the radiation-curable adhesive include various types such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based. The oligomer is suitably a molecular weight of about 100 to 30,000. The total content of the radiation-polymerizable monomer component or oligomer component in the radiation-curing adhesive is determined within a range in which the adhesive force of the formed adhesive layer 12 can be appropriately reduced by radiation irradiation, relative to 100 parts by mass of the base polymer such as acrylic polymer is, for example, 5 to 500 parts by mass, preferably 40 to 150 parts by mass. In addition, as the additive radiation-curable adhesive, for example, the one disclosed in Japanese Patent Laid-Open No. 60-196956 can also be used.

Examples of the radiation-curable adhesive in the adhesive layer 12 include functional groups such as carbon-carbon double bonds contained in the polymer side chain or the polymer main chain, and the polymer main chain end has radiation polymerizable carbon-carbon double bonds. Intrinsic radiation-curing adhesive for the base polymer. Such an intrinsic radiation-curable adhesive is preferable in terms of suppressing unintentional temporal changes in adhesive properties caused by the transfer of low-molecular-weight components in the formed adhesive layer 12.

As the base polymer contained in the internal radiation-curing adhesive, an acrylic polymer is preferably used as a basic skeleton. As the acrylic polymer forming such a basic skeleton, the acrylic polymer used as the additive radiation-curable adhesive described above can be used. As a method of introducing a radiation-polymerizable carbon-carbon double bond to an acrylic polymer, for example, the following method may be mentioned: a raw material monomer containing a monomer having a specific functional group (first functional group) is copolymerized to obtain After the acrylic polymer, a specific functional group (second functional group) and radiation capable of bonding with the first functional group by reacting with the first functional group are maintained while maintaining the radiation polymerizability of the carbon-carbon double bond The polymerizable carbon-carbon double bond compound and the acrylic polymer undergo condensation reaction or addition reaction.

Examples of the combination of the first functional group and the second functional group include carboxyl group and epoxy group, epoxy group and carboxyl group, carboxyl group and aziridine group, aziridine group and carboxyl group, hydroxyl group and isocyanate group, Isocyanate and hydroxyl. Among these combinations, from the viewpoint of easy reaction tracking, a combination of a hydroxyl group and an isocyanate group, or a combination of an isocyanate group and a hydroxyl group is preferred. In addition, since the production of a polymer having an isocyanate group with high reactivity is relatively technically difficult, it is more preferable to be the above-mentioned first on the acrylic polymer side in terms of easy production or acquisition of an acrylic polymer. When the functional group is a hydroxyl group and the second functional group is an isocyanate group. In this case, examples of the isocyanate compound including a radiation-polymerizable carbon-carbon double bond and an isocyanate group as a second functional group, that is, an isocyanate compound containing a radiation-polymerizable unsaturated functional group, include, for example: Methacryloyl isocyanate, 2-methacryloyl oxyethyl isocyanate (MOI) and isopropenyl-α,α-dimethylbenzyl metaisocyanate.

系化合物、樟腦醌、鹵化酮、醯基氧化膦及醯基磷酸酯。作為α-酮醇系化合物，例如可列舉：4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮及1-羥基環己基苯基酮。作為苯乙酮系化合物，例如可列舉：甲氧基苯乙酮、2,2-二甲氧基-1,2-二苯基乙烷-1-酮、2,2-二乙氧基苯乙酮及2-甲基-1-[4-(甲硫基)-苯基]-2-𠰌啉基丙烷-1。作為安息香醚系化合物，例如可列舉：安息香乙醚、安息香異丙醚及大茴香偶姻甲醚。作為縮酮系化合物，例如可列舉苄基二甲基縮酮。作為芳香族磺醯氯系化合物，例如可列舉2-萘磺醯氯。作為光活性肟系化合物，例如可列舉1-苯基-1,2-丙二酮-2-(O-乙氧基羰基)肟。作為二苯甲酮系化合物，例如可列舉：二苯甲酮、苯甲醯基苯甲酸及3,3'-二甲基-4-甲氧基二苯甲酮。作為9-氧硫𠮿

系化合物，例如可列舉：9-氧硫𠮿

、2-氯9-氧硫𠮿

、2-甲基9-氧硫𠮿

、2,4-二甲基9-氧硫𠮿

、異丙基9-氧硫𠮿

、2,4-二氯9-氧硫𠮿

、2,4-二乙基9-氧硫𠮿

及2,4-二異丙基9-氧硫𠮿

。黏著劑層12中之放射線硬化性黏著劑中之光聚合起始劑之含量相對於丙烯酸系聚合物等基礎聚合物100質量份，例如為0.05～20質量份。The radiation hardening adhesive in the adhesive layer 12 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include: α-ketol-based compounds, acetophenone-based compounds, benzoin ether-based compounds, ketal-based compounds, aromatic sulfonyl chloride-based compounds, photoactive oxime-based compounds, and diphenyl Ketone-based compounds, 9-oxygen sulfur 𠮿

Compounds, camphorquinone, halogenated ketones, acylphosphine oxide and acylphosphate. Examples of the α-keto alcohol-based compound include 4-(2-hydroxyethoxy)phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α,α'-dimethyl styrene Ketone, 2-methyl-2-hydroxyphenylacetone and 1-hydroxycyclohexyl phenyl ketone. Examples of the acetophenone-based compound include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one and 2,2-diethoxybenzene Acetone and 2-methyl-1-[4-(methylthio)-phenyl]-2-𠰌olinylpropane-1. Examples of the benzoin ether-based compound include benzoin ether, benzoin isopropyl ether, and anisin methyl ether. Examples of the ketal-based compound include benzyl dimethyl ketal. Examples of the aromatic sulfonyl chloride-based compound include 2-naphthalene sulfonyl chloride. Examples of the photoactive oxime-based compound include 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)oxime. Examples of the benzophenone-based compound include benzophenone, benzoylbenzoic acid, and 3,3′-dimethyl-4-methoxybenzophenone. As 9-oxygen sulfur 𠮿

Compounds, for example, 9-oxosulfur 𠮿

、2-chloro 9-oxygen sulfur 𠮿

、2-Methyl 9-Oxysulfur 𠮿

、2,4-Dimethyl 9-oxysulfur 𠮿

、Isopropyl 9-oxygen sulfur 𠮿

、2,4-Dichloro 9-oxysulfur 𠮿

、2,4-Diethyl 9-oxysulfur 𠮿

And 2,4-diisopropyl 9-oxysulfur 𠮿

. The content of the photopolymerization initiator in the radiation-curable adhesive in the adhesive layer 12 is, for example, 0.05 to 20 parts by mass relative to 100 parts by mass of the base polymer such as acrylic polymer.

The above-mentioned heat-foaming adhesive in the adhesive layer 12 is an adhesive containing a component that foams or expands by heating. Examples of components that foam or expand by heating include foaming agents and thermally expandable microspheres.

Examples of the foaming agent for heat-foaming adhesives include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium boron hydride, and azides. Examples of the organic foaming agent include chlorofluorinated alkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azobisisobutyronitrile, azodimethylformamide, and barium azodicarboxylate. Compounds; hydrazines such as p-toluenesulfonylhydrazine or diphenylsulfon-3,3'-disulfonylhydrazine, 4,4'-oxybis(benzenesulfonylhydrazine), allylbis(sulfonylhydrazine) Compounds; ρ-tolylsulfonylamidourea or 4,4′-oxybis(phenylsulfonylamidourea) and other amine urea compounds; 5-𠰌olinyl-1,2,3,4-thiol Triazole compounds such as triazole; and N,N'-dinitrosopentamethylenetetramine or N,N'-dimethyl-N,N'-dinitroso-p-xylylenediamine, etc. N-nitroso compounds.

Examples of the heat-expandable microspheres for heating and foaming adhesives include microspheres composed of a substance that is easily gasified by heating and expanded into a shell. Examples of the substance that is easily gasified and expands by heating include isobutane, propane, and pentane. A substance that expands easily by gasification by heating is enclosed in a shell-forming substance by agglomeration method, interfacial polymerization method, or the like, whereby thermally expandable microspheres can be produced. As the shell-forming substance, a substance exhibiting thermal melting property or a substance that can be broken by the thermal expansion of the enclosed substance can be used. Examples of such a substance include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polyphenol.

Examples of the above-mentioned non-decreasing adhesive in the adhesive layer 12 include pressure-sensitive adhesives. As the pressure-sensitive adhesive, for example, an acrylic adhesive or a rubber adhesive using an acrylic polymer as a base polymer can be used. When the adhesive layer 12 contains an acrylic adhesive as a pressure-sensitive adhesive, the acrylic polymer as the base polymer of the acrylic adhesive preferably contains a monomer derived from (meth)acrylate The unit serves as the largest monomer unit in terms of mass ratio. Examples of such acrylic polymers include the acrylic polymers described above with regard to radiation-curable adhesives.

As the pressure-sensitive adhesive in the adhesive layer 12, an adhesive in a form in which the radiation-hardening adhesive described above with respect to the adhesive strength-reducing adhesive is hardened by radiation irradiation may also be used. Even though the adhesive strength of this hardened radiation hardening type adhesive decreases due to radiation exposure, depending on the content of the polymer component, it can also show the adhesiveness brought about by the polymer component, in a specific state of use It can exert adhesive force that can be used to adhere and maintain the adherend.

In the adhesive layer 12 of the present embodiment, one type of non-decreasing adhesive may be used, or two or more types of non-decreasing adhesive may be used. In addition, the whole of the adhesive layer 12 may be formed of a non-decreasing adhesive, or a part of the adhesive layer 12 may be formed of a non-decreasing adhesive. For example, when the adhesive layer 12 has a single-layer structure, the whole of the adhesive layer 12 is formed of a non-adhesive adhesive, or a specific part of the adhesive layer 12 may be formed of a non-adhesive adhesive. Formed, other parts are formed by the adhesive with reduced adhesion. In addition, when the adhesive layer 12 has a laminated structure, all the layers that can form the laminated structure are formed of a non-adhesive adhesive, or a part of the layers in the laminated structure may be formed of a non-adhesive adhesive.

The adhesive layer 12 or the adhesive used to form it may contain a cross-linking accelerator, an adhesion-imparting agent, an anti-aging agent, a coloring agent, etc. in addition to the above-mentioned components. Examples of the colorant include pigments and dyes. In addition, the colorant may be a compound that is colored by irradiation with radiation. Examples of such compounds include leuco dyes.

The thickness of the adhesive layer 12 is preferably 1-50 μm, more preferably 2-30 μm, still more preferably 5-25 μm. Such a configuration is preferable, for example, in terms of maintaining the balance of the adhesive force of the adhesive layer 12 to the adhesive layer 20 before and after radiation hardening when the adhesive layer 12 contains a radiation-curing adhesive.

The adhesive layer 20 of the die-bonding film X has a function as an adhesive that exhibits thermosetting properties for die bonding. In the present embodiment, the adhesive used to form the adhesive layer 20 may have a composition containing a thermosetting resin and a thermoplastic resin as a binder component, for example, or may be produced by being able to react with the curing agent. The thermosetting functional group of the thermoplastic resin bond. When the adhesive used to form the adhesive layer 20 has a composition including a thermoplastic resin accompanied by a thermosetting functional group, the adhesive need not further include a thermosetting resin (epoxy resin, etc.). Such an adhesive layer 20 may have a single-layer structure or a multi-layer structure.

When the adhesive layer 20 contains a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amine-based resin, unsaturated polyester resin, and polyurethane Ester resin, silicone resin and thermosetting polyimide resin. As the thermosetting resin in the adhesive layer 20, one resin may be used, or two or more resins may be used. The thermosetting resin contained in the adhesive layer 20 is preferably epoxy resin because of the tendency for the content of ionic impurities and the like that may cause corrosion of the semiconductor wafer to be bonded to the crystal to be low. In addition, as the hardener of the epoxy resin, phenol resin is preferred.

Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, and stilbene. Type, phenol novolak type, o-cresol novolak type, trihydroxyphenylmethane type, tetraphenol ethane type, hydantoin type, isocyanuric acid triglycidyl ester type and glycidyl amine type epoxy resin . Novolac epoxy resin, biphenyl epoxy resin, trihydroxyphenylmethane epoxy resin, and tetraphenol ethane epoxy resin are rich in reactivity with phenol resin as a curing agent and have excellent heat resistance. Therefore, the epoxy resin contained in the adhesive layer 20 is preferable.

Examples of the phenol resin that can function as a curing agent for epoxy resins include polyhydroxystyrenes such as novolac-type phenol resins, soluble phenol-type phenol resins, and poly-p-hydroxystyrene. Examples of novolak-type phenol resins include phenol novolak resins, phenol aralkyl resins, cresol novolak resins, tertiary butylphenol novolak resins, and nonylphenol novolak resins. As the phenol resin that can function as a curing agent for epoxy resin, one kind of phenol resin may be used, or two or more kinds of phenol resins may be used. When phenol novolak resin or phenol aralkyl resin is used as a hardener for epoxy resin as a bonding agent for crystal bonding, there is a tendency to improve the connection reliability of the adhesive, so it is used as an adhesive layer 20 The hardener of the epoxy resin contained in it is preferable.

From the viewpoint of sufficiently performing the hardening reaction of the epoxy resin and the phenol resin in the adhesive layer 20, the phenol resin is equivalent to the epoxy group in the epoxy resin component, and the hydroxyl group in the phenol resin becomes It is preferably contained in the adhesive layer 20 in an amount of 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

From the viewpoint of properly exhibiting the function as a thermosetting adhesive in the adhesive layer 20, the content ratio of the thermosetting resin in the adhesive layer 20 is preferably 5 to 60% by mass, more preferably 10 to 50% by mass.

Examples of the thermoplastic resin included in the adhesive layer 20 include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, and ethylene. -Acrylate copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, PET or Saturated polyester resins such as PBT, polyimide amide imide resin and fluorine resin. As the thermoplastic resin in the adhesive layer 20, one resin may be used, or two or more resins may be used. The thermoplastic resin included in the adhesive layer 20 is preferably an acrylic resin because it is easy to ensure bonding reliability by the adhesive layer 20 in order to reduce ionic impurities and have high heat resistance. .

The acrylic resin contained in the adhesive layer 20 as a thermoplastic resin preferably contains a monomer unit derived from (meth)acrylate as the main monomer unit in terms of mass ratio. As such (meth)acrylate, for example, the same (meth)acrylate as described above for the acrylic polymer as a component of the radiation-curable adhesive for forming the adhesive layer 12 can be used. The acrylic resin contained in the adhesive layer 20 as a thermoplastic resin may also contain monomer units derived from other monomers capable of being copolymerized with (meth)acrylate. Examples of such other monomer components include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, Acrylonitrile and other functional group-containing monomers, or various polyfunctional monomers, specifically, an acrylic polymer as a component of the radiation-curable adhesive for forming the adhesive layer 12 can be used as The other monomers in the copolymerization of the base) acrylate are the same as described above. From the viewpoint of achieving higher cohesion in the adhesive layer 20, the acrylic resin contained in the adhesive layer 20 is preferably (meth)acrylate, carboxyl group-containing monomer, nitrogen atom-containing monomer and Copolymer of multifunctional monomers. The (meth)acrylate is preferably an alkyl (meth)acrylate having 4 or less carbon atoms in the alkyl group. The polyfunctional monomer is preferably a polyglycidyl-based polyfunctional monomer. The acrylic resin contained in the adhesive layer 20 is more preferably a copolymer of ethyl acrylate, butyl acrylate, acrylic acid, acrylonitrile, and polyglycidyl (meth)acrylate.

The weight average molecular weight of the thermoplastic resin such as acrylic resin in the adhesive layer 20 is preferably 500,000 or less, more preferably 480,000 or less, and even more preferably 450,000 or less. The same molecular weight is, for example, 50,000 or more.

The glass transition temperature of the thermoplastic resin such as acrylic resin in the adhesive layer 20 is preferably 25 to 50°C. Regarding the glass transition temperature of the polymer, the glass transition temperature (theoretical value) calculated based on the following Fox formula can be used. The formula of Fox is the relationship between the glass transition temperature Tg of a polymer and the glass transition temperature Tgi of each homopolymer of the monomer in the polymer. In the following Fox formula, Tg represents the glass transition temperature of the polymer (°C), Wi represents the weight fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature of the homopolymer of the monomer i (°C ). Regarding the glass transition temperature of the homopolymer, literature values can be used. For example, in the "New Polymer Library 7 Introduction to Synthetic Resins for Coatings" (Sanka Kitaoka, Polymer Press Conference, 1995) or "Acrylate Catalog (1997 Edition)" (Mitsubishi Rayon Co., Ltd.) The glass transition temperature of the homopolymer. On the other hand, the glass transition temperature of the homopolymer of the monomer can also be determined by the method specifically described in Japanese Patent Laid-Open No. 2007-51271.

Fox's formula 1/(273＋Tg)=Σ[Wi/(273＋Tgi)]

When the adhesive layer 20 contains a thermoplastic resin accompanied by a thermosetting functional group, as the thermoplastic resin, for example, a thermosetting functional group-containing acrylic resin can be used. The acrylic resin used to form the thermosetting functional group-containing acrylic resin preferably contains a monomer unit derived from (meth)acrylate as the main monomer unit in terms of mass ratio. As such (meth)acrylate, for example, the same (meth)acrylate as described above for the acrylic polymer as a component of the radiation-curable adhesive for forming the adhesive layer 12 can be used. On the other hand, examples of the thermosetting functional group for forming the thermosetting functional group-containing acrylic resin include glycidyl group, carboxyl group, hydroxyl group, and isocyanate group. Among these, glycidyl group and carboxyl group can be preferably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxyl group-containing acrylic resin can be preferably used. In addition, as the curing agent of the thermosetting functional group-containing acrylic resin, for example, the external crosslinking agent described above may be used as a component of the radiation curing adhesive for forming the adhesive layer 12. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, as the hardener, a polyphenol-based compound can be preferably used, and for example, the above-mentioned various phenol resins can be used.

The content ratio of the high molecular weight component or resin component in the adhesive layer 20 as described above is preferably 50 to 95% by mass, more preferably 50 to 90% by mass.

The adhesive layer 20 may contain a filler. By blending the filler in the adhesive layer 20, the elastic modulus such as the tensile storage elastic modulus of the adhesive layer 20, or the physical properties such as electrical conductivity and thermal conductivity can be adjusted. Examples of fillers include inorganic fillers and organic fillers, and inorganic fillers are particularly preferred. Examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, and nitride Boron, crystalline silicon dioxide, and amorphous silicon dioxide can also be exemplified by simple metals such as aluminum, gold, silver, copper, and nickel, or alloys, amorphous carbon black, and graphite. The filler may have various shapes such as spherical shape, needle shape, and sheet shape. In the adhesive layer 20, one kind of filler can be blended, and two or more kinds of fillers can also be blended. The filler content ratio of the adhesive layer 20 is preferably 35 to 60% by mass, more preferably 40 to 55% by mass, and even more preferably 42 to 52% by mass.

When the adhesive layer 20 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10 μm, and more preferably 0.005 to 1 μm. The structure in which the average particle diameter of the filler is 0.005 μm or more is preferable in terms of achieving high wettability or adhesion of the adherend such as a semiconductor wafer in the adhesive layer 20. The structure in which the average particle diameter of the filler is 10 μm or less is preferable in terms of enjoying a sufficient filler addition effect in the adhesive layer 20 and ensuring heat resistance. The average particle diameter of the filler can be obtained, for example, using a photometric particle size distribution meter (trade name "LA-910", manufactured by Horiba Manufacturing Co., Ltd.).

The adhesive layer 20 may also contain one or more other components as needed. Examples of the other components include flame retardants, silane coupling agents, and ion trapping agents. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane and γ-glycidoxypropylmethyl Based diethoxysilane. Examples of the ion trapping agent include aluminum magnesium carbonates, bismuth hydroxide, hydrous antimony oxide (e.g. "IXE-300" manufactured by East Asia Synthesizer Co., Ltd.), and zirconium phosphate (e.g. manufactured by East Asia Synthesizer Co., Ltd.) "IXE-100"), magnesium silicate (such as "KYOWAAD 600" manufactured by Kyowa Chemical Industry Co., Ltd.) and aluminum silicate (such as "KYOWAAD 700" manufactured by Kyowa Chemical Industry Co., Ltd.). Compounds that can form complexes with metal ions can also be used as ion trapping agents. Examples of such compounds include triazole-based compounds, tetrazole-based compounds, and bipyridine-based compounds. Among these, from the viewpoint of the stability of the complex formed with the metal ion, a triazole-based compound is preferred. Examples of such triazole compounds include 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, and carboxybenzene Pyrogallazole, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chlorobenzotriazole Azole, 2-(2-hydroxy-3-tert-butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-tert-pentylbenzene Group) benzotriazole, 2-(2-hydroxy-5-third octylphenyl) benzotriazole, 6-(2-benzotriazolyl)-4-third octyl-6'- Third butyl-4'-methyl-2,2'-methylenebisphenol, 1-(2,3-dihydroxypropyl)benzotriazole, 1-(1,2-dicarboxydiethyl Group) benzotriazole, 1-(2-ethylhexylaminomethyl) benzotriazole, 2,4-di-third pentyl-6-{(H-benzotriazol-1-yl )Methyl)phenol, 2-(2-hydroxy-5-t-butylphenyl)-2H-benzotriazole, octyl-3-[3-t-butyl-4-hydroxy-5-( 5-chloro-2H-benzotriazol-2-yl)phenyl]propionate, 2-ethylhexyl-3-[3-tert-butyl-4-hydroxy-5-(5-chloro-2H -Benzotriazol-2-yl)phenyl]propionate, 2-(2H-benzotriazol-2-yl)-6-(1-methyl-1-phenylethyl)-4- (1,1,3,3-tetramethylbutyl)phenol, 2-(2H-benzotriazol-2-yl)-4-third butylphenol, 2-(2-hydroxy-5-methyl Phenyl)benzotriazole, 2-(2-hydroxy-5-third-octylphenyl)-benzotriazole, 2-(3-tert-butyl-2-hydroxy-5-methylbenzene Group)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-third pentylphenyl) benzotriazole, 2-(2-hydroxy-3,5-di- Tributylphenyl)-5-chloro-benzotriazole, 2-[2-hydroxy-3,5-bis(1,1-dimethylbenzyl)phenyl]-2H-benzotriazole, 2,2'-methylenebis[6-(2H-benzotriazol-2-yl]-4-(1,1,3,3-tetramethylbutyl)phenol], 2-[2- Hydroxy-3,5-bis(α,α-dimethylbenzyl)phenyl]-2H-benzotriazole and methyl-3-[3-(2H-benzotriazol-2-yl)- 5-tert-butyl-4-hydroxyphenyl] propionate. In addition, specific hydroxyl-containing compounds such as hydroquinone compounds, hydroxyanthraquinone compounds, and polyphenol compounds can also be used as ion trapping agents. Examples of the hydroxyl group-containing compound include 1,2-dihydroxybenzene, alizarin, anthracenol, tannin, gallic acid, methyl gallate, and pyrogallol.

The thickness of the adhesive layer 20 is, for example, in the range of 1 to 200 μm, preferably 5 to 40 μm. The configuration in which the thickness of the adhesive layer 20 is 5 μm or more is preferable in that the adhesive layer 20 to which the frame member is attached follows fine irregularities on the surface of the frame member and exerts good frame member adhesion. The configuration in which the thickness of the adhesive layer 20 is 40 μm or less is preferable in terms of ensuring the cutting property in the following expansion step in the adhesive layer 20.

Adhesive layer 20 showed a peeling adhesion of 0.5 to 5 N/10 mm at 180° in a peeling test (first peeling test) under the conditions of 100° C., a peeling angle of 180°, and a peeling speed of 30 mm/min. . The adhesive force is preferably 0.6 to 3 N/10 mm, and more preferably 0.7 to 2 N/10 mm. At the same time, the adhesive layer 20 exhibited 180 of 3 to 15 N/10 mm in the peeling test (second peeling test) under the conditions of 23° C., a peeling angle of 180°, and a peeling speed of 30 mm/min. ° Peel adhesion. The adhesive force is preferably 3.2 to 12 N/10 mm, and more preferably 3.4 to 10 N/10 mm. These adhesion forces are measured by the peel test performed on the adhesive layer 20 before hardening. Furthermore, the adhesive layer 20 exhibited 180° peeling of 5 N/10 mm or more in the peeling test (third peeling test) under the conditions of the silicon plane at -15°C, peeling angle 180° and peeling speed 30 mm/min. Adhesion. The adhesive force is preferably 5.5 N/10 mm or more, and more preferably 6 N/10 mm or more.

Adhesive layer 20 to 100 pieces of adhesive layer 20 test specimens with a width of 10 mm and a thickness of 200 μm under the conditions of an initial distance between chucks of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a heating rate of 10°C/min. The loss elastic modulus at ℃ is preferably 0.1 to 0.5 MPa, more preferably 0.12 to 0.45 MPa. In addition, the adhesive layer 20 was measured under the conditions of an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a heating rate of 10° C./min for a test piece of the adhesive layer 20 with a width of 10 mm and a thickness of 200 μm. The maximum value of the loss tangent in the range of 25 to 50°C is 0.8 or more. The loss elastic modulus and loss tangent can be obtained based on dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring device.

The weight reduction rate of the adhesive layer 20 under a nitrogen atmosphere, a reference weight temperature of 23° C.±2° C. and a heating rate of 10° C./min at 100° C. in a weight reduction measurement is 0.8% or less, preferably 0.6% or less , More preferably 0.5% or less. The weight reduction rate of the buffer material sheet can be measured using a differential thermal-thermogravimetric simultaneous measuring device. As the same device, for example, Rigaku Co., Ltd. differential thermo balance Thermo plus TG8120 can be cited.

The die-cut die-bonding film X having the above-described structure can be produced as follows, for example.

The dicing tape 10 of the dicing die-bonding film X can be produced by providing an adhesive layer 12 on the prepared substrate 11. For example, the resin-made substrate 11 can be produced by a calendering film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, etc. Membrane method production. The adhesive layer 12 can be formed by preparing the adhesive composition for forming the adhesive layer 12 and then coating the adhesive composition on the substrate 11 or a specific separation film (ie, release liner) to form the adhesive composition layer If necessary, the adhesive composition layer is dried and formed. Examples of the coating method of the adhesive composition include roll coating, screen coating, and gravure coating. The temperature for drying the adhesive composition layer is, for example, 80 to 150° C., and the time is, for example, 0.5 to 5 minutes. When the adhesive layer 12 is formed on the isolation film, the adhesive layer 12 accompanying the isolation film is attached to the substrate 11. In the above manner, the dicing tape 10 can be produced.

Regarding the adhesive layer 20 of the die-cut adhesive film X, the adhesive composition layer can be formed by preparing the adhesive composition for forming the adhesive layer 20 and then coating the adhesive composition on a specific separation film. The adhesive composition layer needs to be dried and produced. Examples of the coating method of the adhesive composition include roll coating, screen coating, and gravure coating. The temperature for drying the adhesive composition layer is, for example, 70 to 160° C., and the time is, for example, 1 to 5 minutes.

In the production of the die-cut die-bonding film X, secondly, the adhesive layer 20 is pressed and bonded to the adhesive layer 12 side of the die-cut tape 10, for example. The bonding temperature is, for example, 30 to 50°C, preferably 35 to 45°C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf/cm, preferably 1 to 10 kgf/cm. When the adhesive layer 12 is the radiation hardening adhesive layer as described above, when the adhesive layer 12 is irradiated with ultraviolet rays or other radiation after the adhesive layer 20 is attached, for example, the adhesive layer is applied from the side of the substrate 11 12 Irradiation is performed, and the irradiation amount is, for example, 50 to 500 mJ/cm ² . The irradiated area (irradiated area R) in the die-cut adhesive film X as a measure to reduce the adhesive force of the adhesive layer 12 is usually the area other than its peripheral portion in the bonding area of the adhesive layer 20 in the adhesive layer 12 area.

For example, the die-cut die-bonding film X shown in FIG. 1 can be produced as described above.

As described above, the adhesive layer 20 of the die-bonding film as the die-cut die-bonding film X exhibited 180° to the silicon plane in the first peeling test (100°C, peeling angle 180°, peeling speed 30 mm/min) The peeling adhesive force (first adhesive force) is 0.5 to 5 N/10 mm, preferably 0.6 to 3 N/10 mm, and more preferably 0.7 to 2 N/10 mm. This configuration is suitable for ensuring the bonding state between the adhesive layer 20 and the semiconductor wafer under high temperature conditions in the die bonding step of the semiconductor wafer with the adhesive layer obtained through the expansion step described below to suppress the semiconductor wafer Floating up.

As described above, the adhesive layer 20 of the die-bonding film as the die-cut die-bonding film X exhibited 180° to the silicon plane in the second peeling test (23°C, peeling angle 180°, peeling speed 30 mm/min) The peeling adhesive force (second adhesive force) is 3 to 15 N/10 mm, preferably 3.2 to 12 N/10 mm, and more preferably 3.4 to 10 N/10 mm. Such a structure is suitable for ensuring the bonding state between the adhesive layer 20 and the semiconductor wafer in the bonding state during the crystal bonding step and the temperature reduction process after the crystal cutting step or room temperature conditions, and suppressing the floating of the semiconductor wafer.

In this way, the die-bonding film X is suitable for suppressing the floating of the semiconductor wafer in the bonding step of the semiconductor wafer with the adhesive layer 20, and is suitable for suppressing the floating of the semiconductor wafer after the bonding step.

As described above, the distance between the adhesive layer 20 of the die-bonding film X and the adhesive layer 20 of the width 10 mm and thickness 200 μm between the initial chuck 22.5 mm, frequency 1 Hz, dynamic strain 0.005% and heating rate The loss elastic modulus measured at 100°C under the condition of 10°C/min is preferably 0.1 to 0.5 MPa, more preferably 0.12 to 0.45 MPa. Such a configuration is preferable in that the adhesive layer 20 ensures wettability at 100° C. and its vicinity to achieve the first adhesive force.

As described above, the distance between the adhesive layer 20 of the die-bonding film X and the adhesive layer 20 of the width 10 mm and thickness 200 μm between the initial chuck is 22.5 mm, the frequency is 1 Hz, the dynamic strain is 0.005%, and the heating rate The maximum value of the loss tangent measured at 10°C/min in the range of 25 to 50°C is 0.8 or more. Such a configuration is preferable in that the adhesive layer 20 ensures the wettability at 25 to 50° C. and its vicinity to achieve the second adhesive force.

The adhesive layer 20 of the die-cut adhesive film X exhibited a 180° peel adhesion to the silicon plane of 5 N/10 in the third peel test (-15°C, peel angle 180°, peel speed 30 mm/min). mm or more, preferably 5.5 N/10 mm or more, and more preferably 6 N/10 mm or more. In such a configuration, when the above-mentioned expansion step accompanied by the cutting of the adhesive layer 20 as a viscous film is performed at a low temperature of -10°C or lower, for example, the adhesion between the adhesive layer 20 and the semiconductor wafer in this step is suppressed. It is preferable in terms of peeling.

As mentioned above, the weight reduction rate of the adhesive layer 20 of the die-bonding film X under a nitrogen atmosphere, a base weight temperature of 23°C±2°C and a heating rate of 10°C/min at 100°C in the weight reduction measurement It is 0.8% or less, preferably 0.6% or less, and more preferably 0.5% or less. Such a configuration is preferable from the viewpoint of suppressing the decrease in the adhesive force of the adhesive layer 20 caused by the contamination of the semiconductor wafer caused by the outgassing component from the adhesive layer 20.

It is preferable that the adhesive layer 20 of the die-cut adhesive film X contains a resin and a filler, and the resin contains 50 to 95% by mass of acrylic resin and thermosetting resin. Such a configuration is preferable from the viewpoint of the balance between the wettability of the adhesive layer 20 and the holding power of the semiconductor wafer in the process at a high temperature of about 100°C, for example. The weight average molecular weight of the acrylic resin is preferably 500,000 or less, more preferably 480,000 or less, and still more preferably 450,000 or less. Such a configuration is preferable from the viewpoint of the balance between the wettability of the adhesive layer 20 and the holding power of the semiconductor wafer in the process at a high temperature of about 100°C, for example. In addition, the filler content ratio of the adhesive layer 20 is preferably 35 to 60% by mass, more preferably 40 to 55% by mass, and even more preferably 42 to 52% by mass. Such a configuration is preferable in that the adhesive layer 20 seeks to balance the cutting property and the cohesive force in the expansion step.

2 to 7 show a method of manufacturing a semiconductor device according to an embodiment of the present invention.

In the method of manufacturing the semiconductor device, first, as shown in FIGS. 2(a) and 2(b), the divided groove 30a is formed in the semiconductor wafer W (divided groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the side of the first surface Wa in the semiconductor wafer W, and wiring structures etc. (not shown) required for the semiconductor elements have been formed on the first surface Wa. In this step, after the wafer processing tape T1 having the adhesive surface T1a is attached to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held in the state of the wafer processing tape T1. On the side of the first surface Wa of the semiconductor wafer W, a split blade 30a of a specific depth is formed using a rotating blade such as a crystal cutting device. The dividing groove 30a is used to separate the semiconductor wafer W into a gap of a semiconductor wafer unit (in FIGS. 2 to 4, the dividing groove 30a is schematically indicated by a thick solid line).

Next, as shown in FIG. 2(c), bonding of the wafer processing tape T2 having the adhesive surface T2a to the first surface Wa side of the semiconductor wafer W, and wafer processing tape T1 from the semiconductor wafer W Of stripping.

Next, as shown in FIG. 2(d), with the semiconductor wafer W held by the wafer processing tape T2, the semiconductor wafer W is thinned to a specific thickness by grinding processing from the second surface Wb (Wafer thinning step). Grinding processing can be performed using a grinding processing device equipped with grinding stones. Through this wafer thinning step, in this embodiment, a semiconductor wafer 30A that can be singulated into a plurality of semiconductor wafers 31 is formed. Specifically, the semiconductor wafer 30A has a portion (connection portion) where the portion of the wafer to be singulated into a plurality of semiconductor wafers 31 is located on the second surface Wb side and connected. The thickness of the connecting portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the front end on the second surface Wb side of the dividing groove 30a is, for example, 1 to 30 μm, preferably 3 to 20 μm .

Next, as shown in FIG. 3( a ), the semiconductor wafer 30A held by the adhesive tape T2 for wafer processing is bonded to the adhesive layer 20 of the die-bonding film X. Thereafter, as shown in FIG. 3( b ), the wafer processing tape T2 is peeled from the semiconductor wafer 30A. In the case where the adhesive layer 12 in the die-cut adhesive film X is a radiation hardening adhesive layer, the adhesive layer 12 can be faced from the side of the substrate 11 after the semiconductor wafer 30A is bonded to the adhesive layer 20 Irradiation of ultraviolet rays and other radiation to replace the above-mentioned radiation irradiation in the manufacturing process of the die-cut adhesive film X. The irradiation dose is, for example, 50 to 500 mJ/cm ² . The irradiated area (the irradiated area R shown in FIG. 1) of the die-cut adhesive film X as a measure of reducing the adhesive force of the adhesive layer 12 is, for example, the division in the bonding area of the adhesive layer 20 in the adhesive layer 12 The area outside its periphery.

Next, after attaching the ring frame 41 on the adhesive layer 12 of the dicing tape 10 in the dicing die bonding film X, as shown in FIG. 4(a), the dicing die bonding film accompanying the semiconductor wafer 30A The X is fixed to the retainer 42 of the expansion device.

Next, as shown in FIG. 4(b), the first expansion step (cold expansion step) under relatively low temperature conditions is performed, the semiconductor wafer 30A is singulated into a plurality of semiconductor wafers 31, and the die-bonding film X The adhesive layer 20 is cut into small pieces of the adhesive layer 21 to obtain a semiconductor wafer 31 with an adhesive layer. In this step, the hollow cylinder-shaped lifting member 43 provided in the expansion device is in contact with the dicing tape 10 on the lower side of the die-bonding film X in the figure and rises, and the semiconductor wafer 30A is bonded The dicing tape 10 of the dicing die-bonding film X expands so as to extend in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is carried out under the condition that a tensile stress in the range of 15 to 32 MPa, more preferably 20 to 32 MPa is generated in the dicing tape 10. The temperature condition in the cold expansion step is preferably 0°C or lower, more preferably -20 to -5°C, more preferably -15 to -5°C, and more preferably -15°C. The expansion speed (the speed at which the jacking member 43 rises) in the cold expansion step is preferably 0.1 to 100 mm/sec. In addition, the expansion amount in the cold expansion step is preferably 3 to 16 mm.

In this step, singulation of the semiconductor wafer 31 occurs in the semiconductor wafer 30A because the thin-walled portion is easily broken. At the same time, in this step, the regions where the semiconductor wafers 31 are in close contact with each other in the adhesive layer 20 in close contact with the adhesive layer 12 of the expanded dicing tape 10 are suppressed from deformation. On the other hand, this does not occur In this state of deformation suppression, the tensile stress generated by the dicing tape 10 acts on the portion facing the dividing groove between the semiconductor wafers 31. As a result, the portion of the adhesive layer 20 that faces the dividing groove between the semiconductor wafer 31 is cut. After this step, as shown in FIG. 4(c), the lifting member 43 is lowered, and the expanded state in the dicing tape 10 is released.

Next, as shown in FIG. 5(a), the second expansion step under relatively high temperature is performed to increase the distance (spacing distance) between the semiconductor wafers 31 with the adhesive layer. In this step, the hollow cylindrical jacking member 43 provided in the expansion device rises again to expand the dicing tape 10 of the dicing die-bonding film X. The temperature condition in the second expansion step is, for example, 10°C or higher, preferably 15-30°C. The expansion speed (the speed at which the jacking member 43 rises) in the second expansion step is, for example, 0.1 to 10 mm/sec, preferably 0.3 to 1 mm/sec. In addition, the expansion amount in the second expansion step is, for example, 3 to 16 mm. To the extent that the semiconductor wafer 31 of the adhesive layer can be properly picked up from the dicing tape 10 by the following pickup step, the separation distance of the semiconductor wafer 31 of the adhesive layer is enlarged in this step. After this step, as shown in FIG. 5(b), the jacking member 43 is lowered, and the expanded state in the dicing tape 10 is released. In order to suppress the separation distance of the semiconductor wafer 31 with the adhesive layer on the dicing tape 10 after the expansion state is released, it is preferable to place the dicing tape 10 outside the holding area of the semiconductor wafer 31 before the expansion state is released The part is heated to shrink it.

Secondly, after cleaning the semiconductor wafer 31 side of the dicing tape 10 of the semiconductor wafer 31 with the adhesive layer attached, if necessary, using a cleaning solution such as water, as shown in FIG. The semiconductor wafer 31 of the adhesive layer is followed (pick up step). For example, after raising the pin member 44 of the pickup mechanism located on the lower side of the dicing tape 10 in the figure, and lifting the semiconductor wafer 31 of the adhesive layer to be picked up via the dicing tape 10, the suction jig 45 is used Adsorption and retention. In the pickup step, the jacking speed of the pin member 44 is, for example, 1 to 100 mm/sec, and the jacking amount of the pin member 44 is, for example, 50 to 3000 μm.

Next, as shown in FIG. 7( a ), the semiconductor wafer 31 with the adhesive layer picked up is pre-fixed to the specific adherend 51 via the adhesive layer 21 (crystal bonding step). Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a semiconductor wafer manufactured separately. In this step, on the semiconductor wafer 31 adhered to the substrate via the adhesive layer 21, a plurality of semiconductor wafers 31 with a certain number of adhesive layers corresponding to the composition of the semiconductor device to be manufactured are sequentially stacked in multiple stages.

Next, as shown in FIG. 7(b), the electrode pad (not shown) of the semiconductor wafer 31 and the terminal portion (not shown) of the adherend 51 are electrically connected via a bonding wire 52 (wire bonding step) . The electrode pad of the semiconductor chip 31 or the terminal portion of the adherend 51 and the bonding wire 52 are connected by ultrasonic welding accompanied by heating, and the adhesive layer 21 is not thermally hardened. As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The wire heating temperature in wire bonding is, for example, 80 to 250°C.

Next, as shown in FIG. 7(c), the semiconductor wafer 31 is sealed with a sealing resin 53 for protecting the semiconductor wafer 31 or the bonding wire 52 on the adherend 51 (sealing step). In this step, the adhesive layer 21 is thermally hardened. In this step, the sealing resin 53 is formed by, for example, a transfer molding technique using a mold. As a constituent material of the sealing resin 53, for example, epoxy resin can be used. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185°C, and the heating time is, for example, 60 seconds to several minutes. In the case where the hardening of the sealing resin 53 is not sufficiently performed in this step (sealing step), a hardening step for completely hardening the sealing resin 53 is performed after this step. That is, when the adhesive layer 21 is not completely thermally cured in the sealing step, the adhesive layer 21 may be completely thermally cured together with the sealing resin 53 in the post-curing step. In the post-hardening step, the heating temperature is, for example, 165 to 185°C, and the heating time is, for example, 0.5 to 8 hours.

In the above manner, a semiconductor device can be manufactured.

In this embodiment, as described above, after the semiconductor wafer 31 with the adhesive layer is pre-fixed on the adherend 51, the wire bonding step is performed without the adhesive layer 21 being fully thermally cured. After the semiconductor wafer 31 with the adhesive layer is pre-fixed on the adherend 51, the adhesive layer 21 is thermally hardened and then a wire bonding step is performed to replace this configuration.

In the semiconductor device manufacturing method, the wafer thinning step shown in FIG. 8 may also be performed after the process described above with reference to FIG. 2(c), instead of the crystal described above with reference to FIG. 2(d) Round thinning steps. In the wafer thinning step shown in FIG. 8, with the semiconductor wafer W held by the wafer processing tape T2, the wafer is thinned to a specific value by grinding processing from the second surface Wb In thickness, a semiconductor wafer divided body 30B including a plurality of semiconductor wafers 31 and held by the wafer processing tape T2 is formed. In this step, a method of grinding the wafer until the dividing groove 30a itself is exposed on the second surface Wb side (first method), or grinding the crystal before reaching the dividing groove 30a from the second surface Wb side A method of forming a semiconductor wafer divided body 30B by forming a crack between the dividing groove 30a and the second surface Wb by a circular pressing force from the rotating grindstone to the wafer thereafter (second method). According to the method employed, the depth of the dividing groove 30a formed as described above with reference to FIGS. 2(a) and 2(b) from the first surface Wa is appropriately determined. In FIG. 8, the split groove 30 a passing through the first method or the split groove 30 a passing through the second method and cracks connected thereto are schematically indicated by thick solid lines. In this embodiment, after the semiconductor wafer division body 30B produced in this manner is bonded to the diced die-bonding film X instead of the semiconductor wafer 30A, the steps described above with reference to FIGS. 3 to 7 may be performed.

9(a) and 9(b) show the first expansion step (cold expansion step) performed after the die-bonding film X is bonded to the semiconductor wafer division 30B. In this step, the hollow cylinder-shaped lifting member 43 of the expansion device is placed on the lower side of the die-bonding film X in contact with the die-cutting tape 10 and rises to divide the bonded semiconductor wafer The dicing tape 10 of the dicing die-bonding film X of the body 30B expands so as to extend in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer division body 30B. This expansion is carried out under the condition that tensile stress in the range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa is generated in the dicing tape 10. The temperature condition in this step is preferably below 0°C, more preferably -20 to -5°C, more preferably -15 to -5°C, and more preferably -15°C. The expansion speed (the speed at which the jacking member 43 rises) in this step is preferably 1 to 500 mm/sec. In addition, the expansion amount in this step is preferably 50 to 200 mm. By this cold expansion step, the adhesive layer 20 of the diced die-bonding film X is cut into small pieces of the adhesive layer 21 to obtain a semiconductor wafer 31 with an adhesive layer. Specifically, in this step, the regions where the semiconductor wafers 31 of the semiconductor wafer division 30B in the adhesive layer 20 in close contact with the adhesive layer 12 of the expanded dicing tape 10 are in close contact are suppressed from deformation, and On the one hand, in the state where such a deformation suppression effect is not generated, the tensile stress generated by the dicing tape 10 acts on a portion opposed to the dividing groove 30a between the semiconductor wafers 31. As a result, the portion of the adhesive layer 20 that faces the dividing groove 30a between the semiconductor wafer 31 is cut.

In the manufacturing method of the semiconductor device of this embodiment, the semiconductor wafer 30C produced in the following manner may be bonded to the die-bonding film X, instead of bonding the semiconductor wafer 30A or the semiconductor crystal to the die-bonding film X The above-mentioned structure of the circle division body 30B.

As shown in FIGS. 10( a) and 10 (b ), first, a modified region 30 b is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the side of the first surface Wa in the semiconductor wafer W, and wiring structures etc. (not shown) required for the semiconductor elements have been formed on the first surface Wa. In this step, after the wafer processing tape T3 having the adhesive surface T3a is attached to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held in the state of the wafer processing tape T3. The side opposite to the wafer processing tape T3 irradiates the semiconductor wafer W along the planned dividing line to align the condensing point with the laser light inside the wafer, and the semiconductor wafer W is abraded by multi-photon absorption. The modified region 30b is formed. The modified region 30b is used to separate the semiconductor wafer W into a brittle region of the semiconductor wafer unit. The method of forming the modified region 30b by irradiating laser light on a predetermined dividing line in a semiconductor wafer is described in detail in Japanese Patent Laid-Open No. 2002-192370, for example. In this method, the laser light irradiation conditions in this embodiment are appropriately adjusted within the range of the following conditions, for example. <Laser beam irradiation conditions> (A) Laser Semiconductor laser light source laser excitation Nd: YAG (Neodymium-doped Yttrium Aluminium Garnet, neodymium-doped yttrium aluminum garnet) 1064 nm laser light spot cross-sectional area of the laser wavelength of 3.14 × 10 ^{- 8} cm ² Oscillation form Q Switch pulse repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser quality TEM00 Polarization characteristics Linear polarization (B) Condensing lens magnification 100 times or less NA (Numerical Aperture, numerical aperture) 0.55 Transmittance to laser light wavelength is 100% or less (C) The moving speed of the mounting table on which the semiconductor substrate is mounted is 280 mm/sec or less

Next, while the semiconductor wafer W is held by the wafer processing tape T3, the semiconductor wafer W is thinned to a specific thickness by grinding processing from the second surface Wb, as shown in FIG. 10(c) To form a semiconductor wafer 30C that can be singulated into a plurality of semiconductor wafers 31 (wafer thinning step). In this embodiment, after the semiconductor wafer 30C fabricated as described above is replaced with the semiconductor wafer 30A to the die-bonding film X, the steps described above with reference to FIGS. 3 to 7 may be performed.

FIGS. 11(a) and 11(b) show the first expansion step (cold expansion step) after the semiconductor wafer 30C is bonded to the die-bonding film X. In this step, the hollow cylindrical jacking member 43 provided in the expansion device is in contact with the dicing tape 10 on the lower side of the die-bonding film X in the figure and rises, and the semiconductor wafer 30C is bonded The dicing tape 10 of the dicing die-bonding film X expands in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expansion is carried out under the condition that tensile stress in the range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa is generated in the dicing tape 10. The temperature condition in this step is preferably below 0°C, more preferably -20 to -5°C, more preferably -15 to -5°C, and more preferably -15°C. The expansion speed (the speed at which the jacking member 43 rises) in this step is preferably 1 to 500 mm/sec. In addition, the expansion amount in this step is preferably 50 to 200 mm. By this cold expansion step, the adhesive layer 20 of the diced die-bonding film X is cut into small pieces of the adhesive layer 21 to obtain a semiconductor wafer 31 with an adhesive layer. Specifically, in this step, cracks are formed in the brittle modified region 30b of the semiconductor wafer 30C, resulting in singulation of the semiconductor wafer 31. At the same time, in this step, the regions where the semiconductor wafers 31 of the semiconductor wafer 30C in the adhesive layer 20 that are in close contact with the adhesive layer 12 of the expanded dicing tape 10 are in close contact with each other suppress deformation. In a state where such a deformation suppression effect is not generated, the tensile stress generated by the dicing tape 10 acts on a portion opposite to the crack formation portion of the wafer. As a result, the portion of the adhesive layer 20 that faces the crack formation portion of the semiconductor wafer 31 is cut off. [Example]

[Example 1] <Preparation of dicing tape> In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer and a stirring device, 100 parts by mass of 2-ethylhexyl acrylate (2EHA) and 2-hydroxy acrylate A mixture of 19 parts by mass of ethyl ester (HEA), 0.4 parts by mass of benzoyl peroxide as a polymerization initiator and 80 parts by mass of toluene as a polymerization solvent was stirred at 60° C. for 10 hours under a nitrogen atmosphere (polymerization reaction). By this, a polymer solution containing the acrylic polymer P ₁ was obtained. Next, the mixture containing the polymer solution containing the acrylic polymer P ₁ , 2-methacryloxyethyl isocyanate (MOI) and dibutyltin dilaurate as an addition reaction catalyst was added at 50 Stir at 60°C for 60 hours in an air atmosphere (addition reaction). In this reaction solution, the amount of MOI blended was 1.2 parts by mass with respect to 100 parts by mass of the acrylic polymer P ₁ . In this reaction solution, the amount of dibutyltin dilaurate blended was 0.1 parts by mass with respect to 100 parts by mass of the acrylic polymer P ₁ . By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacryloyl group in the side chain is obtained. Next, 1.3 parts by mass of polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Co., Ltd.) and 3 parts by mass of light relative to 100 parts by mass of acrylic polymer P ₂ were added to the polymer solution A polymerization initiator (trade name "Irgacure 184", manufactured by BASF) was mixed, and the mixture was diluted with toluene so that the viscosity of the mixture at room temperature became 500 mPa·s to obtain an adhesive solution. Next, apply an adhesive solution to the silicone release mold surface of the PET separator with the silicone release surface treated with an applicator to form a coating film, and apply the coating film at 120°C 2 Heat and dry in minutes to form an adhesive layer with a thickness of 10 μm on the PET separator. Next, using a laminating machine, a base material (thickness 115 μm) made of ethylene-vinyl acetate copolymer (EVA) was bonded to the exposed surface of the adhesive layer at room temperature. The dicing tape is produced as above.

<Formation of Adhesive Layer> 100 parts by mass of acrylic resin A ₁ (trade name "TEISANRESIN SG-80H", weight average molecular weight 350,000, glass transition temperature Tg 11°C, manufactured by Nagase chemteX Co., Ltd.), phenol resin (Trade name "MEHC-7851SS", solid at 23°C, manufactured by Minghe Chemical Co., Ltd.) 14 parts by mass and silica filler (trade name "SO-25R", manufactured by Admatechs Co., Ltd.) 69 parts by mass added A certain amount of methyl ethyl ketone was mixed to prepare an adhesive composition C _{1 with a} total solid content concentration of 20% by mass. Secondly, having a coating applicator is implemented using poly silicon oxide surface of the PET polymerization process of the silicon oxide insulating film release-treated surface of a release agent composition C ₁ is then formed by coating, the coating film at 130 ℃ Under heating and drying for 2 minutes, an adhesive layer with a thickness of 10 μm as an adhesive film is formed on the PET separator.

〈Fabrication of crystal-cut crystal film〉 After peeling off the PET release film from the dicing tape, the adhesive layer exposed in the dicing tape was aligned with the adhesive layer accompanied by the PET release film, while being bonded at room temperature using a bonding machine. The die-cut die-bonding film of Example 1 having the laminated structure including the die-cut tape and the adhesive layer as the die-bonding film was produced in the above manner.

[Example 2] The adhesive composition C _{2 was used} instead of the adhesive composition C ₁ described above when forming the adhesive layer (thickness 10 μm), except that it was the same as the die-cut adhesive film of Example 1. The die-cut crystal bonding film of Example 2 was fabricated. Adhesive composition C ₂ is made of acrylic resin A ₁ (trade name "TEISANRESIN SG-80H", manufactured by Nagase ChemteX Co., Ltd.) 100 parts by mass, epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Co., Ltd. ) 53 parts by mass, phenol resin (trade name "MEHC-7851SS", manufactured by Minghe Chemical Co., Ltd.) 45 parts by mass and silica filler (trade name "SO-25R", manufactured by Admatechs Co., Ltd.) 193 parts by mass Mix with methyl ethyl ketone to a specific amount to prepare a total solid content concentration of 20% by mass.

[Comparative Example 1] In the same manner as in the die-cut die-bonding film of Example 1, except that the adhesive composition C _{3 was used} instead of the adhesive composition C ₁ described above when forming the adhesive layer (thickness 10 μm) The die-cut crystal bonding film of Comparative Example 1 was produced. Adhesive composition C _{3 is} based on 100 parts by mass of acrylic resin A ₂ (trade name "TEISANRESIN SG-P3", weight average molecular weight 850,000, glass transition temperature Tg 12°C, manufactured by Nagase chemteX Co., Ltd.), epoxy Resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation) 58 parts by mass, phenol resin (trade name "MEHC-7851SS", manufactured by Minghe Chemical Co., Ltd.) 55 parts by mass, and silica filler (trade name "SO -25R", manufactured by Admatechs Co., Ltd.) 69 parts by mass are added to a specific amount of methyl ethyl ketone and mixed to prepare a total solid content concentration of 20% by mass.

[Comparative Example 2] The adhesive composition C _{4 was used} instead of the adhesive composition C ₁ described above when forming the adhesive layer (thickness 10 μm), except that the die-cut adhesive film of Example 1 was used. The die-cut crystal bonding film of Comparative Example 2 was produced. Adhesive composition C ₄ based on 100 parts by mass of acrylic resin A ₂ (trade name "TEISANRESIN SG-P3", manufactured by Nagase ChemteX Corporation), epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation ) 73 parts by mass, phenol resin (trade name "MEHC-7851SS", manufactured by Minghe Chemical Co., Ltd.) 89 parts by mass and silica filler (trade name "SO-25R", manufactured by Admatechs Co., Ltd.) 69 parts by mass Mix with methyl ethyl ketone to a specific amount to prepare a total solid content concentration of 20% by mass.

[180° peel adhesion of adhesive layer] The adhesive layers in the die-cut adhesive films of Examples 1, 2 and Comparative Examples 1 and 2 were investigated for 180° peel adhesion. First, peel off the adhesive layer from the dicing tape, and attach the backing tape (trade name "BT-315", manufactured by Nitto Denko Co., Ltd.) to the surface of the adhesive layer that is bonded to the side of the dicing tape. A test piece (width 10 mm×length 60 mm) was cut out from the substrate adhesive layer. Next, after confirming that the surface temperature of the silicon wafer placed on the heating plate at a set temperature of 60°C is 60°C, the surface of the silicon wafer (Si plane) is bonded to the exposed surface of the adhesive layer in the test piece . The lamination is performed by a reciprocating crimping operation with a 2 kg hand pressure roller. Then, using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation), the peel test from the silicon wafer was conducted under the conditions of 100°C, peeling angle 180° and peeling speed 300 mm/min. In the peeling test of the wafer, the 180° peeling adhesion force (N/10 mm) of the adhesive layer to the silicon wafer at 100°C was measured (the measurement of the first adhesion force). In addition, for the adhesive layers in each of the die-cut adhesive films of Examples 1, 2 and Comparative Examples 1, 2, the measurement temperature was set at 23°C instead of 100°C, and other than 180° at 100°C. In the same manner as for the measurement of the peeling adhesion, the 180° peeling adhesion (N/10 mm) of the adhesive layer to the silicon wafer was measured (the measurement of the second adhesion). For the adhesive layer in each of the die-cut adhesive films of Examples 1 and 2 and Comparative Examples 1 and 2, the measurement temperature was set to -15°C instead of 100°C, except that it was peeled from 180° at 100°C. In the same manner as the measurement of the adhesive force, the 180° peeling adhesive force (N/10 mm) of the adhesive layer to the silicon wafer was measured (the third adhesive force measurement). Table 1 shows the measurement results.

[Determination of Dynamic Viscoelasticity of Adhesive Layer] For the adhesive layers of each of the crystal-cut adhesive films of Examples 1, 2 and Comparative Examples 1, 2, based on dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring device (trade name "RSAIII", manufactured by TA Instruments), Investigate the loss elastic modulus at 100°C and the peak value of the loss tangent at 25-50°C. The test piece for dynamic viscoelasticity measurement was prepared by laminating each adhesive layer into a layered body having a thickness of 200 μm, and cutting from the layered body with a width of 10 mm × a length of 40 mm. In this measurement, the initial chuck distance of the chuck for holding the test piece is set to 22.5 mm, the measurement mode is set to the stretch mode, the measurement temperature range is set to -40°C to 285°C, and the frequency is set It is 1 Hz, the dynamic strain is set to 0.005%, and the heating rate is set to 10°C/min. The values of the peak value of the loss elastic modulus (MPa) at 100°C and the loss tangent at 25 to 50°C are shown in Table 1 (for the adhesive layer in Comparative Example 1, at 25 to 50°C) There is no peak of loss tangent within the range).

[Weight reduction rate of adhesive layer] With respect to the adhesive layers of the die-cut adhesive films of Examples 1 and 2 and Comparative Examples 1 and 2, the weight reduction rate at 100°C was investigated. A sample of about 10 mg was cut out from the adhesive layer, and a differential thermal-thermogravimetric simultaneous measurement device (trade name "differential thermal balance TG-DTA TG8120", manufactured by Rigaku Co., Ltd.) was used for the sample to measure the temperature rise process The weight is reduced. This measurement is performed under a nitrogen atmosphere at a temperature increase rate of 10°C/min from 23°C to 300°C as a reference weight temperature. Table 1 shows the reduction rate (%) from the weight (reference weight) at 23°C to the weight at 100°C in the sample.

[Evaluation of peeling suppression] Using the diced die-bonding films of Examples 1 and 2 and Comparative Examples 1 and 2, the bonding step described below, the first expansion step for cutting (cold expansion step), and the first step for spacing were performed. 2Expansion step (normal temperature expansion step) and crystal bonding step.

In the bonding step, the semiconductor wafer held on the tape for wafer processing (trade name "UB-3083D", manufactured by Nitto Denko Co., Ltd.) is bonded to the adhesive layer of the die-cut adhesive film, and thereafter, from Semiconductor wafer peeling tape for wafer processing. The semiconductor wafer is diced and thinned by half-cutting to form a dividing groove for singulation (forming a lattice shape with a width of 25 μm and a section of 10 mm×10 mm) and a thickness of 50 μm. For the bonding, a bonding machine was used, the bonding speed was set to 10 mm/sec, the temperature condition was set to 60°C, and the pressure condition was set to 0.15 MPa. In this step, the adhesive layer in the die-bonding film is bonded to the surface of the semiconductor wafer on the side opposite to the formation surface of the dividing groove.

The cold expansion step is performed using a mold isolation device (trade name "mold isolation film DDS2300", manufactured by Disco Co., Ltd.) with its cold expansion unit. Specifically, after the above-mentioned die-cut die-bonding film or its adhesive layer accompanying the semiconductor wafer is attached to the ring frame, the die-cut die-bonding film is installed in the device and expanded by the cold expansion unit of the same device It is accompanied by the dicing tape of the dicing adhesive film of the semiconductor wafer. In this cold expansion step, the temperature is -15°C, the expansion speed is 200 mm/sec, and the expansion amount is 12 mm. Through this step, the semiconductor wafer is singulated on the dicing tape to obtain a plurality of semiconductor wafers with an adhesive layer.

The case where no lift of the adhesive layer on the semiconductor wafer self-cutting tape was generated in all semiconductor wafers after such a cold expansion step was evaluated as peeling suppression in the cold expansion step being "good", and more than one of them The occurrence of the rise of the adhesive layer on the semiconductor wafer from the dicing tape in the semiconductor wafer was evaluated as the "defect" of peeling suppression in the cold expansion step.

The normal temperature expansion step is performed using a mold isolation device (trade name "mold isolation film DDS2300", manufactured by Disco Co., Ltd.) with its normal temperature expansion unit. Specifically, the dicing tape accompanied by the dicing die-bonding film of the semiconductor wafer after the above-mentioned cold expansion step is expanded by the normal temperature expansion unit of the same device. In this normal temperature expansion step, the temperature is 23°C, the expansion rate is 1 mm/sec, and the expansion amount is 10 mm. Thereafter, the die-cut adhesive film that has been expanded at room temperature is subjected to heat shrinkage treatment. The treatment temperature is 220°C and the treatment time is 20 seconds.

In the die bonding step, 7-stage die bonding of the semiconductor wafer with the adhesive layer obtained through the above expansion step is performed. Specifically, first, after picking up a semiconductor wafer with an adhesive layer obtained through the above-mentioned expansion step from the dicing tape, it is bonded to the lead frame through the adhesive layer. Secondly, after picking up the semiconductor wafer with another adhesive layer obtained through the above-mentioned expansion step from the dicing tape, the semiconductor wafer on the lead frame is adhered and crystallized through the adhesive layer. At this time, the upper semiconductor wafers are crystallized in such an arrangement that the four sides of the following semiconductor wafer (the upper semiconductor wafer in a plan view square) are located directly above the four sides of the lower semiconductor wafer in a plan view square. The position offset direction from the position directly above is the separation direction of a pair of parallel sides in the upper semiconductor wafer, and the position offset length is 200 μm. Thereafter, another semiconductor wafer with an adhesive layer obtained through the above-mentioned expansion step is bonded to the semiconductor wafer that has been bonded to the lead frame through the adhesive layer, and this operation is repeated 5 times. In this step, each of the bonded crystals is accompanied by the above-mentioned positional deviation of the upper semiconductor wafer relative to the lower semiconductor wafer in the same direction (positional offset length 200 μm). In addition, each of the viscous crystals in this step was carried out under the conditions of 100°C, an applied pressure of 0.2 MPa, and a pressurized time of 2 seconds.

The case where the semiconductor wafer floated from the adhesive layer when the seventh stage of bonding crystal did not occur in all semiconductor wafers was evaluated as "good" in the peeling of the bonding crystal (DB) step, and more than one semiconductor wafer The occurrence of the rise of the semiconductor wafer from the adhesive layer was evaluated as the "defect" of the peeling suppression in the DB step. In addition, when the semiconductor wafer did not rise from the adhesive layer when it was left at room temperature for 1 hour after the crystal bonding step, the peeling inhibition at room temperature after the DB step was evaluated as "good" In one or more semiconductor wafers, the occurrence of the rise of the semiconductor wafer from the adhesive layer was evaluated as the "defect" of peeling suppression at room temperature after the DB step. These results are shown in Table 1.

[Evaluation] The diced die-bonding films of Examples 1 and 2 have a 180° peeling adhesion force to the Si plane at 100°C in the range of 0.5 to 5 N/10 mm and a 180° peeling adhesion force to the Si plane at 23°C. Adhesive layer in the range of 3 to 15 N/10 mm. In the semiconductor wafer with the adhesive layer obtained by the expansion step using such a die-cut die-bonding film, no floating of the semiconductor wafer from the adhesive layer is generated in the die-bonding step, and the temperature is lowered after the die-bonding step At the stage up to room temperature, the semiconductor wafer did not rise from the adhesive layer. In contrast, in the semiconductor wafer with the adhesive layer obtained through the expansion step performed using the die-bonding films of Comparative Examples 1 and 2, it occurred in the state of the room temperature drop after the die-bonding step or later The semiconductor wafer rises from the adhesive layer.

In addition, each of the diced die-bonding films of Examples 1 and 2 has an adhesive layer with a peeling adhesive force of 5 N/10 mm or more at 180° to the Si plane at -15°C. In the cold expansion step performed using such a die-cut die-bonding film, no floating of the semiconductor wafer from the adhesive layer is generated. On the other hand, in the cold expansion step performed using the diced die-bonding films of Comparative Examples 1 and 2, a semiconductor wafer produced by the floating of the adhesive layer can be seen.

[Table 1]

10‧‧‧Crystal 11‧‧‧ Base material 12‧‧‧Adhesive layer 12a‧‧‧adhesive surface 20‧‧‧ Adhesive layer 21‧‧‧ Adhesive layer 30A‧‧‧Semiconductor wafer 30B‧‧‧Semiconductor wafer segment 30C‧‧‧Semiconductor wafer 30a‧‧‧slot 30b‧‧‧Modified area 31‧‧‧Semiconductor chip 41‧‧‧ring frame 42‧‧‧Retainer 43‧‧‧Jack 44‧‧‧pin member 45‧‧‧Adsorption fixture 51‧‧‧adhered body 52‧‧‧bond wire 53‧‧‧Sealing resin R‧‧‧Irradiated area T1‧‧‧Tape processing tape T1a‧‧‧adhesive surface T2‧‧‧ Wafer processing tape T2a‧‧‧adhesive surface T3‧‧‧Tape processing tape T3a‧‧‧adhesive surface W‧‧‧Semiconductor wafer Wa‧‧‧ Face 1 Wb‧‧‧The second side X‧‧‧Crystal-cut crystal film

FIG. 1 is a schematic cross-sectional view of a die-cut adhesive film according to an embodiment of the present invention. 2(a) to (d) show a part of the steps in the method of manufacturing a semiconductor device using the die-bonding film shown in FIG. Fig. 3 (a) and (b) show the steps following the step shown in Fig. 2. 4(a) to (c) show steps following the step shown in FIG. 3. 5(a) and (b) show steps following the step shown in FIG. 4. Fig. 6 shows steps following the step shown in Fig. 5. 7(a) to (c) show steps following the step shown in FIG. 6. FIG. 8 shows a part of steps in a modification of the method for manufacturing a semiconductor device using the die-bonding film shown in FIG. 1. 9(a) and (b) show a part of steps in a modification of the method of manufacturing a semiconductor device using the die-bonding film shown in FIG. 1. FIGS. 10( a) to (c) show a part of steps in a modification of the method for manufacturing a semiconductor device using the die-bonding film shown in FIG. 1. 11(a) and (b) show a part of steps in a modification of the method of manufacturing a semiconductor device using the die-bonding film shown in FIG. 1.

10‧‧‧Crystal

11‧‧‧ Base material

12‧‧‧Adhesive layer

12a‧‧‧adhesive surface

20‧‧‧ Adhesive layer

R‧‧‧Irradiated area

X‧‧‧Crystal-cut crystal film

Claims (10)

A crystal-cut crystal bonding film, which has: Dicing tape, which has a laminated structure including a substrate and an adhesive layer; and An adhesive layer, which is in peelable close contact with the adhesive layer in the dicing tape; and The above-mentioned adhesive layer exhibited a peeling adhesion of 0.5 to 5 N/10 mm of 180° in the first peeling test under the conditions of 100°C, peeling angle 180° and peeling speed 30 mm/min, and The above-mentioned adhesive layer exhibited a 180° peeling adhesion force of 3 to 15 N/10 mm in the second peeling test under the conditions of 23° C., a peeling angle of 180°, and a peeling speed of 30 mm/min. The die-cut adhesive film of claim 1, wherein the distance between the above adhesive layer and the adhesive layer test piece with a width of 10 mm and a thickness of 200 μm between the initial chuck is 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005% and a heating rate The loss elastic modulus measured at 10°C/min at 100°C is 0.1 to 0.5 MPa. The die-cut adhesive film of claim 1, wherein the distance between the above adhesive layer and the adhesive layer test piece with a width of 10 mm and a thickness of 200 μm between the initial chuck is 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005% and a heating rate The maximum value of the loss tangent measured at 10°C/min in the range of 25 to 50°C is 0.8 or more. The die-cut die-bonding film according to claim 1, wherein the above adhesive layer exhibits 5 N/10 in the third peel test under the conditions of -15°C, peeling angle 180° and peeling speed 30 mm/min. 180° peeling adhesion above mm. The die-cut die-bonding film according to claim 1, wherein the weight loss of the above-mentioned adhesive layer under a nitrogen atmosphere, a reference weight temperature of 23°C±2°C and a heating rate of 10°C/min is measured at 100°C The rate is less than 0.8%. The die-cut die-bonding film according to any one of claims 1 to 5, wherein the adhesive layer includes a resin and a filler, and the resin includes 50 to 95% by mass of an acrylic resin and a thermosetting resin. The die-cut die-bonding film according to claim 6, wherein the filler content of the adhesive layer is 35 to 60% by mass. The die-cut crystal bonding film according to claim 6, wherein the weight average molecular weight of the acrylic resin is 500,000 or less. A method of manufacturing a semiconductor device, including: The first step is a semiconductor wafer that can be singulated into a plurality of semiconductor wafers, or includes a plurality of semiconductor wafers that can be singulated into a plurality of semiconductor wafers on the side of the adhesive layer in the die-cut adhesive film according to any one of claims 1 to 8. A semiconductor wafer segment of semiconductor wafers; The second step, which is to cut the adhesive layer by expanding the dicing die-bonding film to obtain a semiconductor wafer with an adhesive layer; and In the third step, the semiconductor wafer with the adhesive layer is bonded to the substrate or other semiconductor wafers. The method for manufacturing a semiconductor device according to claim 9, wherein the temperature condition in the second step is 0°C or lower.

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