TW202137308A - Manufacturing method for semiconductor device manufacturing sheet - Google Patents

Abstract

Provided is a manufacturing method for a semiconductor device manufacturing sheet. The semiconductor device manufacturing sheet comprises a base material, an adhesive layer, an intermediate layer, a film-like bonding agent, and a second peeling film that are stacked in the stated order. The manufacturing method comprises: a first machining step for removing at least a portion of the intermediate layer and the film-like bonding agent from a second intermediate laminate comprising the intermediate layer, the film-like bonding agent, and a first peeling film, thereby attaining a second intermediate laminate machining product; a laminating step for bonding the first intermediate laminate comprising the base material and the adhesive layer together with the second intermediate laminate machining product, thereby attaining a first laminate; a re-pasting step for peeling the first peeling film from the first laminate and pasting the first peeling film onto the second peeling film, thereby attaining a second laminate; and a second machining step for eliminating at least a portion of the base material and the adhesive layer from the second laminate, thereby attaining the semiconductor device manufacturing sheet. The peeling force between the first peeling film and the film-like bonding agent is greater than the peeling force between the second peeling film and the film-like bonding agent.

Description

Manufacturing method of sheet for manufacturing semiconductor device

The present invention relates to a method of manufacturing a sheet for manufacturing a semiconductor device. This application is based on Japanese Patent Application No. 2020-058734 filed in Japan on March 27, 2020 and claims priority, and the content of the application is used here.

When manufacturing a semiconductor device, a semiconductor wafer with a film-like adhesive is used. The semiconductor wafer with a film-like adhesive includes a semiconductor wafer and a film-like adhesive provided on the inner surface of the semiconductor wafer. As an example of the manufacturing method of the semiconductor wafer with a film-shaped adhesive agent, the method shown below can be mentioned, for example.

First, attach a dicing die-bonding sheet to the inner surface of the semiconductor wafer. Examples of the dicing die-bonding wafer include those provided with a support sheet and a film-like adhesive provided on the surface of the support sheet. The supporting sheet can be used as a cutting sheet. As the support sheet, there are, for example, a support sheet having a substrate and an adhesive layer provided on the surface of the substrate, and a plurality of support sheets having different configurations such as those composed of only the substrate. The outermost surface of the support sheet with the adhesive layer on the adhesive layer side becomes the surface where the film-like adhesive is provided. The dicing adhesive chip is attached to the inner surface of the semiconductor wafer by the film-like adhesive in the dicing adhesive chip.

Then, the semiconductor wafer on the support sheet and the film-like adhesive are cut together by dicing with a blade. The "cutting" of the semiconductor wafer is also called "segmentation", whereby the semiconductor wafer is singulated into the target semiconductor chip. The film adhesive is cut along the outer periphery of the semiconductor wafer. Thereby, a semiconductor chip with a film-like adhesive can be obtained, and a group of semiconductor chips with a film-like adhesive can be obtained. The semiconductor chip with the film-like adhesive is provided with a semiconductor chip and arranged on the inner surface of the semiconductor chip After cutting the film-shaped adhesive, the semiconductor wafer group with the film-shaped adhesive is arranged neatly on the support sheet and holds a plurality of these semiconductor wafers with the film-shaped adhesive.

Then, the semiconductor wafer with the film-like adhesive is pulled away from the supporting sheet and picked up. In the case of using a support sheet with a hardening adhesive layer, at this time, the adhesive layer is hardened to reduce the adhesiveness, and picking up becomes easier. Through the above operations, a semiconductor wafer with a film adhesive for manufacturing a semiconductor device is obtained.

As another example of the method of manufacturing a semiconductor wafer with a film-like adhesive, for example, the method shown below can be cited. First, a back polishing tape (sometimes called "surface protection tape") is attached to the circuit formation surface of the semiconductor wafer. Then, a predetermined segmentation part is set inside the semiconductor wafer, the area contained in the part is set as a focus, and the laser light is irradiated to focus to the focus, thereby forming a modified layer inside the semiconductor wafer. Then, a grinder is used to grind the inner surface of the semiconductor wafer, thereby adjusting the thickness of the semiconductor wafer to a target value. By using the grinding force applied to the semiconductor wafer at this time, the semiconductor wafer is divided (singulated) at the formation portion of the modified layer to produce a plurality of semiconductor wafers. The method of dividing the semiconductor wafer with the formation of the modified layer is called stealth dicing (registered trademark), and the semiconductor wafer is cut off by irradiating laser light to the semiconductor wafer while cutting off the irradiated part. Laser cutting in which semiconductor wafers are gradually cut from the surface is completely different in nature.

Furthermore, on the inner surface (in other words, the ground surface) of all the semiconductor wafers fixed to the back grinding tape on which the above-mentioned grinding has been performed, a sticky wafer is attached. As the bonding wafer, the same as the above-mentioned dicing bonding wafer can be mentioned. Sticky wafers are not used in the dicing of semiconductor wafers like this, and can sometimes be designed to have the same structure as dicing sticky wafers. The bonding chip is also attached to the inner surface of the semiconductor chip by the film-like adhesive in the bonding chip.

Then, after removing the back polishing tape from the semiconductor chip, the bonded chip is cooled while stretching in a direction parallel to the surface of the bonded chip (for example, the attaching surface of the film-like adhesive to the semiconductor chip) The so-called expansion (cold expansion), whereby the film-like adhesive is cut along the outer periphery of the semiconductor wafer. Through the above operations, a semiconductor chip with a film-like adhesive is obtained. The semiconductor chip with a film-like adhesive includes a semiconductor chip and a cut-off film-like adhesive provided on the inner surface of the semiconductor chip.

Then, as in the case of cutting with a blade as described above, the semiconductor wafer with the film-like adhesive is pulled from the supporting sheet and picked up, thereby obtaining a semiconductor wafer with the film-like adhesive for manufacturing a semiconductor device.

Both dicing and bonding wafers can be used to manufacture semiconductor chips with film-like adhesives, and finally target semiconductor devices can be manufactured. In this specification, dicing and bonding chips are referred to as "sheets for manufacturing semiconductor devices".

As a sheet for manufacturing semiconductor devices, for example, a dicing die-bonding tape (equivalent to the aforementioned dicing die-attachment) is disclosed. The dicing die-bonding tape has a substrate layer (equivalent to the aforementioned support sheet) and an adhesive layer (equivalent to the aforementioned film-like Adhesive) Direct contact and laminated structure (refer to Patent Document 1). In the dicing die-bonding tape, the 90-degree peeling force of the base material layer and the adhesive layer at -15°C is adjusted to a specific range, so it can be considered that the adhesive layer can be separated with high precision by expansion. In addition, the 90-degree peeling force of the substrate layer and the adhesive layer at 23°C is adjusted to a specific range, so it can be considered that the semiconductor wafer with the adhesive layer can be picked up without difficulty when the dicing die-bonding tape is used ( It is equivalent to the aforementioned semiconductor wafer with a film-like adhesive), and it can prevent the semiconductor wafer and the semiconductor wafer from peeling off the adhesive layer during the process up to the pick-up. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Application Laid-Open No. 2018-56289.

[The problem to be solved by the invention]

However, in the production of the dicing die-bonding tape as disclosed in Patent Document 1, the film-forming properties of the adhesive layer (corresponding to the film-like adhesive) have not been studied.

The object of the present invention is to provide a method for manufacturing a semiconductor device manufacturing sheet, which can easily form a film-like adhesive and can manufacture a semiconductor device manufacturing sheet with excellent mounting process suitability during use. [Means to solve the problem]

(1) A method of manufacturing a sheet for manufacturing a semiconductor device, wherein the sheet for manufacturing a semiconductor device is provided with a substrate, an adhesive layer, an intermediate layer, a film-like adhesive, and a second release film, and the substrate is sequentially laminated, The adhesive layer, the intermediate layer, the film-like adhesive, and the second release film are constituted; and the method for manufacturing the semiconductor device manufacturing sheet includes: a first processing step, which includes the intermediate layer and the film-like The intermediate layer and the film-like adhesive of the second intermediate laminate of the adhesive and the first release film are formed at positions corresponding to the outer peripheries of the intermediate layer and the film-like adhesive of the semiconductor device manufacturing sheet. , Using the cut portion C as a starting point to remove at least a part of the intermediate layer and the film-like adhesive located on the outer side to obtain a second intermediate laminated body processed product; the lamination step includes the first substrate and the adhesive layer An intermediate laminate is attached to the second intermediate laminate processed product to obtain a first laminate including the substrate, the adhesive layer, the intermediate layer, the film-like adhesive, and the first release film; The reattaching step is to peel off the first release film of the first laminate, and reattach it to the second release film to obtain a second laminate; and the second processing step is for the substrate and the foregoing of the second laminate In the adhesive layer, a cut portion C'is formed at a position corresponding to the outer periphery of the base material and the adhesive layer of the semiconductor device manufacturing sheet, and the base material and the adhesive on the outside are formed from the cut portion C'as a starting point At least a part of the layer is removed to obtain a sheet for manufacturing a semiconductor device; and the peeling force between the first release film and the film-like adhesive is higher than the peeling force between the second release film and the film-like adhesive. (2) The method of manufacturing a sheet for manufacturing a semiconductor device as described in (1) above, wherein an adhesive composition is applied to the release-treated surface of the first release film and dried to form a single layer with a thickness of 10 μm The first test piece is obtained from the adhesive layer. The adhesive composition here is composed of 100 parts by mass of acrylic resin ("Oribain BPS 6367X" manufactured by Toyo-Chem) in solid form and cross-linked ("BXX 5640" manufactured by Toyo-Chem) 1 part by mass. Regarding the aforementioned first test piece, under the conditions of a peeling speed of 1000mm/min, 23°C, and humidity of 50%RH, the The adhesive layer of the first test piece and the peeling treatment surface of the first peeling film are at an angle of 180° to each other, and the first peeling film is peeled from the adhesive layer by 180° peeling, thereby measuring the aforementioned The peeling force (mN/50mm) between the adhesive layer and the first release film exceeds 180mN/50mm; the adhesive composition is applied to the release treatment surface of the second release film and dried to form a thickness of 10μm The single-layer adhesive layer to obtain the second test piece, where the adhesive composition is 100 parts by mass of acrylic resin ("Oribain BPS 6367X" manufactured by Toyo-Chem) in solid form It is composed of 1 part by mass of a cross-linking agent ("BXX 5640" manufactured by Toyo-Chem). Regarding the aforementioned second test piece, under the conditions of a peeling speed of 1000mm/min, 23°C, and humidity 50%RH , Performing 180° peeling of the second peeling film from the adhesive layer in such a way that the peeling treatment surface of the adhesive layer of the second test piece and the second peeling film are at an angle of 180° to each other, thereby The measured peeling force (mN/50mm) between the adhesive layer and the second peeling film was 180 mN/50mm or less. (3) The method for manufacturing a sheet for manufacturing a semiconductor device as described in (1) or (2), wherein the intermediate layer contains a non-silicon resin having a weight average molecular weight of 100,000 or less as a main component. [Efficacy of invention]

According to this aspect, it is possible to provide a method for manufacturing a sheet for manufacturing a semiconductor device, the film-like adhesive can be easily formed into a film, and it is possible to manufacture a sheet for manufacturing a semiconductor device with excellent mounting process suitability at the time of use.

◇Semiconductor device manufacturing sheet The sheet for manufacturing a semiconductor device according to one embodiment of the present invention includes a substrate, an adhesive layer, an intermediate layer, a film-like adhesive, and a release film, and is composed of the aforementioned substrate, adhesive layer, intermediate layer, and film-like adhesive. And the aforementioned release film is laminated in order. The aforementioned intermediate layer preferably contains a non-silicone resin having a weight average molecular weight of 100,000 or less as a main component.

When using the semiconductor device manufacturing sheet of this embodiment as a dicing sticky wafer for blade dicing, since the semiconductor device manufacturing sheet is provided with the intermediate layer, it is possible to easily prevent the blade from reaching the substrate, and it is possible to suppress generation from the substrate. Whisker-shaped cutting chips (alias: Whisker, not limited to those derived from the base material, sometimes referred to as "cutting chips"). Furthermore, the main component of the intermediate layer cut by a blade can also suppress the generation of cutting chips from the intermediate layer by using a non-silicon resin with a weight average molecular weight of 100,000 or less, especially a weight average molecular weight of 100,000 or less.

On the other hand, when the semiconductor device manufacturing sheet of this embodiment is used as a bonding wafer to perform dicing (stealth dicing (registered trademark)) accompanying the formation of the modified layer in the semiconductor wafer, the aforementioned semiconductor device manufacturing The sheet is provided with the aforementioned intermediate layer, so by subsequently stretching the sheet for manufacturing semiconductor devices in a direction parallel to the surface of the sheet for manufacturing semiconductor devices (for example, the attaching surface of the film-like adhesive to the semiconductor wafer) ( The so-called expansion), the film-like adhesive can be cut at the target site with high precision, and the cutting failure can be suppressed. It is considered that the reason is that by providing the intermediate layer, the expanded stress can be efficiently used for the distance expansion between the wafers.

In this way, the semiconductor device manufacturing sheet of the present embodiment can suppress the generation of cutting chips from the base material and the intermediate layer during the blade dicing, can suppress the cutting failure of the film-like adhesive during the aforementioned expansion, and can suppress the cutting of the semiconductor wafer when the semiconductor wafer is divided. The characteristics that produce bad conditions, the suitability of dividing semiconductor wafers is excellent.

In this specification, the "weight average molecular weight" is a polystyrene conversion value measured by a gel permeation chromatography (GPC; Gel Permeation Chromatography) method unless otherwise specified.

The manufacturing method and use method of the semiconductor device manufacturing sheet of this embodiment will be described in detail below.

Hereinafter, the sheet for manufacturing a semiconductor device of this embodiment will be described in detail while referring to the drawings. In addition, the drawings used in the following description may sometimes be enlarged to show the main parts for easy understanding of the features of the embodiment, and the dimensional ratios of each component may not necessarily be the same as the actual ones.

FIG. 1 is a cross-sectional view schematically showing a sheet for manufacturing a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a plan view of the sheet for manufacturing a semiconductor device shown in FIG. 1. In addition, in the figures after FIG. 2, the same constituent elements as those shown in the already-explained figures are denoted by the same reference numerals as in the already-explained figures, and detailed explanations are omitted.

The sheet 101 for manufacturing a semiconductor device shown here is provided with a base material 11, and an adhesive layer 12, an intermediate layer 13, and a film-like adhesive 14 are laminated on the base material 11 in this order. The sheet 101 for manufacturing a semiconductor device further includes a release film 15 on a surface (hereinafter referred to as a "first surface") 14a on the opposite side of the film-like adhesive 14 to the side where the intermediate layer 13 is provided.

In the sheet 101 for manufacturing a semiconductor device, an adhesive layer 12 is provided on one side of the substrate 11 (in this specification, sometimes referred to as the "first side") 11a. The intermediate layer 13 is provided on the surface 12a of the adhesive layer 12 opposite to the side on which the base material 11 is provided (in this specification, it may be referred to as the "first surface"). A film-like adhesive 14 is provided on the surface 13a of the intermediate layer 13 opposite to the side on which the adhesive layer 12 is provided (in this specification, it may be referred to as the "first surface") 13a. A release film 15 is provided on the first surface 14a of the film-like adhesive 14. In this way, the sheet 101 for manufacturing a semiconductor device is constructed by laminating the base material 11, the adhesive layer 12, the intermediate layer 13, the film-like adhesive 14 and the release film 15 in this order in the thickness direction.

The semiconductor device manufacturing sheet 101 is a state in which the release film 15 is removed, and the first surface 14a of the film-like adhesive 14 in the semiconductor device manufacturing sheet 101 is attached to a semiconductor wafer, a semiconductor wafer, or an incomplete surface. Divide the inner surface of a semiconductor wafer (not shown) for use.

In this specification, in the case of a semiconductor wafer and a semiconductor wafer, the surface on which the circuit is formed is called the "circuit forming surface", and the surface on the opposite side to the circuit forming surface is called the "inner surface" ".

In this specification, a laminate having a structure in which a substrate and an adhesive layer are laminated in the thickness direction of these and an intermediate layer is not laminated may be referred to as a "support sheet". In Fig. 1, reference symbol 1 represents a support sheet. In addition, a laminate having a structure in which a substrate, an adhesive layer, and an intermediate layer are laminated in the thickness direction in this order is sometimes referred to as a "laminated sheet." In FIG. 1, the reference symbol 10 represents a laminated sheet. The laminate of the support sheet and the intermediate layer is included in the laminate sheet.

When the intermediate layer 13 and the film-like adhesive 14 are viewed from the top of these layers and the planar shapes are both circular in plan view, the diameter of the intermediate layer 13 is the same as the diameter of the film-like adhesive 14. Furthermore, in the semiconductor device manufacturing sheet 101, the intermediate layer 13 and the film-like adhesive 14 are arranged so that the center is aligned. In other words, the positions of the outer periphery of the intermediate layer 13 and the film-like adhesive 14 are uniform in the radial direction. Configure in a consistent way.

The area of the first surface 13 a of the intermediate layer 13 and the first surface 14 a of the film adhesive 14 is smaller than the first surface 12 a of the adhesive layer 12. Moreover, the maximum value (ie diameter) of the width W ₁₃ of the intermediate layer 13 and the maximum value (ie the diameter) of the width W ₁₄ of the film adhesive 14 are both smaller than the maximum value of the width of the adhesive layer 12 and the substrate 11 The maximum value of the width. Therefore, in the sheet 101 for manufacturing a semiconductor device, a part of the first surface 12 a of the adhesive layer 12 is not covered by the intermediate layer 13 and the film-like adhesive 14. On the first surface 12a of the adhesive layer 12, the region where the intermediate layer 13 and the film-like adhesive 14 are not laminated is in direct contact and the release film 15 is laminated. When the release film 15 is removed, the region is exposed (Hereinafter, this area may be referred to as "non-layered area" in this specification). Furthermore, in the semiconductor device manufacturing sheet 101 provided with the release film 15, the area of the adhesive layer 12 that is not covered by the intermediate layer 13 and the film-like adhesive 14 may have an unlaminated release film 15 as shown here The area may not exist.

The sheet 101 for manufacturing a semiconductor device in a state where the film-like adhesive 14 is not cut and attached to the above-mentioned semiconductor wafer or semiconductor wafer or the like by the film-like adhesive 14 can be fixed by the following method: A part of the aforementioned non-laminated area in the adhesive layer 12 of the manufacturing sheet 101 is attached to a jig such as a ring frame for fixing a semiconductor wafer. Therefore, it is not necessary to separately provide a jig adhesive layer for fixing the semiconductor device manufacturing sheet 101 to the aforementioned jig in the semiconductor device manufacturing sheet 101. Furthermore, since there is no need to provide an adhesive layer for a jig, the sheet 101 for manufacturing a semiconductor device can be manufactured inexpensively and efficiently.

In this way, the sheet 101 for manufacturing a semiconductor device exhibits an advantageous effect by not having an adhesive layer for a jig, but it may also be provided with an adhesive layer for a jig. In this case, the adhesive layer for a jig is provided in the area near the peripheral edge part of the surface of any one layer which comprises the sheet|seat 101 for semiconductor device manufacture. Examples of such a region include the aforementioned non-laminated region in the first surface 12a of the adhesive layer 12, and the like.

The adhesive layer for a jig may be a well-known one, for example, it may have a single-layer structure containing an adhesive component, or a multilayer structure in which a layer containing an adhesive component is layered on both areas of a sheet that becomes a core material.

In addition, the sheet 101 for manufacturing a conductor device is stretched in a direction parallel to the surface of the sheet 101 for manufacturing a semiconductor device (for example, the first surface 12a of the adhesive layer 12) as described later (so-called expansion) In this case, since the aforementioned non-layered region exists on the first surface 12a of the adhesive layer 12, the sheet 101 for manufacturing a semiconductor device can be easily expanded. Moreover, not only the film-like adhesive 14 can be easily cut, but also the peeling of the intermediate layer 13 and the film-like adhesive 14 from the adhesive layer 12 may be suppressed.

The area of the first surface 12 a of the adhesive layer 12 of the support sheet 1 and the first surface 11 a of the base material 11 is smaller than the first surface 15 a of the release film 15. Moreover, the maximum value (ie, the diameter) of the adhesive layer 12 and the maximum value (ie, the diameter) of the base material 11 are both smaller than the maximum value of the width of the release film 15. Therefore, in the sheet 101 for manufacturing a semiconductor device, a part of the release film 15 is not covered by the adhesive layer 12 and the base material 11.

When the adhesive layer 12 and the base material 11 are viewed from the top of these layers, the planar shapes when viewed from above are both circular, and the adhesive layer 12 and the base material 11 have the same diameter. In addition, in the sheet 101 for manufacturing a semiconductor device, the adhesive layer 12 and the base 11 are arranged so that the center is aligned, in other words, the positions of the outer periphery of the adhesive layer 12 and the base 11 are uniform in the radial direction. Configuration.

In the sheet 101 for manufacturing a semiconductor device, the intermediate layer 13 preferably contains a non-silicon resin having a weight average molecular weight of 100,000 or less as a main component.

The semiconductor device manufacturing sheet of the present embodiment is not limited to those shown in FIGS. 1 and 2, and may be changed, deleted, or added to a part of the structure shown in FIGS. 1 and 2 within the scope that does not impair the efficacy of the present invention. .

For example, the sheet for manufacturing a semiconductor device of the present embodiment may include other layers that are not equivalent to any of the base material, the adhesive layer, the intermediate layer, the film-like adhesive, the release film, and the adhesive layer for jigs. However, the semiconductor device manufacturing sheet of this embodiment is preferably as shown in FIG. The state is provided with a film-like adhesive, and a release film is provided in a state of directly contacting the film-like adhesive.

For example, in the semiconductor device manufacturing sheet of this embodiment, the planar shape of the intermediate layer and the film-like adhesive may be shapes other than a circular shape, and the planar shapes of the intermediate layer and the film-like adhesive may be the same or different from each other. In addition, the area of the first surface of the intermediate layer and the area of the first surface of the film-like adhesive are preferably smaller than those of the surface of the layer closer to the substrate side (for example, the first surface of the adhesive layer). They can be the same or different from each other. Moreover, the positions of the intermediate layer and the outer periphery of the film-like adhesive may be the same in the radial direction, or they may not be consistent. Next, each layer constituting the semiconductor device manufacturing sheet of this embodiment will be described in detail.

○Substrate The aforementioned substrate is in the form of a sheet or film. The constituent material of the aforementioned base material is preferably various resins. Specifically, for example, polyethylene (low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), high-density polyethylene (HDPE), etc.) ), polypropylene (PP), polybutene, polybutadiene, polymethylpentene, styrene-ethylene butene-styrene block copolymer, polyvinyl chloride, vinyl chloride copolymer, polyterephthalene Ethylene formate (PET), polybutylene terephthalate (PBT), polyurethane, polyacrylate urethane, polyimide (PI), ionomer resin, ethylene- (Meth) acrylic copolymer, ethylene-(meth)acrylate copolymer, ethylene-(meth)acrylic acid copolymer and ethylene-(meth)acrylate copolymer other than ethylene copolymer, polystyrene, poly Carbonate, fluororesin, hydrogenated product, modified product, crosslinked product or copolymer of any of these resins, etc.

Furthermore, in this specification, the so-called "(meth)acrylic acid" refers to the concept including both "acrylic acid" and "methacrylic acid". Terms similar to (meth)acrylic acid are also the same. For example, the so-called "(meth)acrylate" is a concept that includes both "acrylate" and "methacrylate". The so-called "(meth)acrylic acid ester" ", is a concept that includes both "acrylic acid group" and "methacrylic acid group".

The resin constituting the substrate may be only one type or two or more types. In the case of two or more types, the combination and ratio of these resins can be arbitrarily selected.

The substrate may be composed of only one layer (single layer), or may be composed of multiple layers of two or more layers. When the substrate is composed of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited as long as the effect of the present invention is not impaired. In this specification, it is not limited to the case of the base material. The so-called "multilayers may be the same or different from each other" means "all the layers may be the same, all the layers may be different, or only some of the layers may be different", Furthermore, "the layers are different from each other" means that "at least one of the constituent materials and thickness of each layer is different from each other."

The thickness of the substrate can be appropriately selected according to the purpose, and is preferably 50 μm to 300 μm, more preferably 60 μm to 150 μm. By making the thickness of the substrate more than the aforementioned lower limit, the structure of the substrate becomes more stable. When the thickness of the base material is equal to or less than the aforementioned upper limit, the film-like adhesive can be cut more easily during blade dicing and during the aforementioned expansion of the semiconductor device manufacturing sheet. Here, the "thickness of the substrate" means the thickness of the entire substrate. For example, the thickness of the substrate composed of multiple layers means the total thickness of all layers constituting the substrate. In this manual, "thickness" can be expressed as a value expressed by measuring the thickness at 5 randomly selected locations and averaging unless otherwise specified. According to JIS (Japanese Industrial Standards) K7130, a constant pressure is used. Obtained by a thickness measuring device.

The substrate may also be subjected to the following treatments on the surface in order to improve the adhesion with other layers such as the adhesive layer provided on the substrate: unevenness by spray treatment, solvent treatment, embossing treatment, etc. Chemical treatment; corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone-ultraviolet irradiation treatment, flame treatment, chromic acid treatment, hot air treatment and other oxidation treatments. In addition, the surface of the substrate can also be primed. In addition, the substrate may also have the following layers: an antistatic coating; when the bonded wafer is stacked and stored, it prevents the substrate from adhering to other sheets or prevents the substrate from adhering to the layer of the suction table.

The base material may contain various well-known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, softeners (plasticizers), etc., in addition to the main constituent materials such as the aforementioned resins.

The optical properties of the substrate are not particularly limited within the range that does not impair the efficacy of the present invention. For example, the substrate can also penetrate laser light or energy rays.

The substrate can be manufactured by a known method. For example, a substrate containing resin (using resin as a constituent material) can be manufactured by molding the aforementioned resin or a resin composition containing the aforementioned resin.

○Adhesive layer The aforementioned adhesive layer is in the form of a sheet or film and contains an adhesive. The adhesive layer can be formed using an adhesive composition containing the aforementioned adhesive. For example, the adhesive composition is applied to the surface to be formed of the adhesive layer, and dried as necessary, thereby forming the adhesive layer on the target site.

The application of the adhesive composition may be performed by a known method, for example, air knife coater, blade coater, bar coater, gravure coater, roll coater, roll knife coater, etc. may be used. Curtain coater, die coater, knife coater, screen coater, Meyer bar coater, touch coater and other coating machine methods.

The drying conditions of the adhesive composition are not particularly limited. When the adhesive composition contains the solvent described later, it is preferably heated and dried. In this case, for example, it is preferably at 70°C to 130°C for 10 seconds. Dry conditions to 5 minutes.

Examples of the aforementioned adhesives include adhesive resins such as acrylic resins, urethane resins, rubber resins, silicone resins, epoxy resins, polyvinyl ethers, polycarbonates, and ester resins. It is preferably an acrylic resin.

Furthermore, in this specification, "adhesive resin" includes both adhesive resin and adhesive resin. For example, the aforementioned adhesive resins include not only those with adhesiveness of the resin itself, but also resins that exhibit adhesiveness by being used in combination with other ingredients such as additives, or those that exhibit adhesiveness by the presence of heat or water triggering. Resin etc.

The adhesive layer may be either curable or non-curable, for example, it may be either energy-ray curable or non-energy-ray curable. The hardening adhesive layer can easily adjust the physical properties before and after hardening.

In this specification, the so-called "energy line" refers to an electromagnetic wave or charged particle beam with energy quantum. Examples of energy rays include ultraviolet rays, radiation rays, electron beams, and the like. Ultraviolet rays can be irradiated by using, for example, high-pressure mercury lamps, fusion lamps, xenon lamps, black lights, or LED (Light Emitting Diode) lamps as the ultraviolet source. The electron beam can be irradiated by an electron beam accelerator or the like. In addition, in this specification, the "energy ray curability" means the property of curing by irradiation of energy rays, and the term "non-energy ray curability" means the property of not curing even if energy rays are irradiated.

The adhesive layer may be composed of only one layer (single layer), or may be composed of multiple layers of two or more layers. In the case of being composed of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited.

The thickness of the adhesive layer is preferably 1 μm to 100 μm, more preferably 1 μm to 60 μm, and particularly preferably 1 μm to 30 μm. Here, the "thickness of the adhesive layer" means the thickness of the entire adhesive layer. For example, the thickness of an adhesive layer composed of multiple layers means the total thickness of all layers constituting the adhesive layer.

The base material and the adhesive layer may have the same shape, and it is preferable that the base material and the adhesive layer are laminated in such a way that the outer periphery of the shape in a plan view is consistent.

The optical properties of the adhesive layer are not particularly limited within a range that does not impair the efficacy of the present invention. For example, the adhesive layer can also allow energy rays to penetrate. Next, the aforementioned adhesive composition will be described. The following adhesive composition can contain one or more of the following components so that the total content (mass%) does not exceed 100% by mass, for example.

[Adhesive composition] When the adhesive layer is energy ray curable, as an energy ray curable adhesive composition containing an energy ray curable adhesive, that is, an energy ray curable adhesive composition, for example, the following can be cited Adhesive composition, etc.: Adhesive composition (I-1), containing non-energy-ray curable adhesive resin (I-1a) (hereinafter sometimes referred to as "adhesive resin (I-1a)"), and Energy ray curable compound; Adhesive composition (I-2), contained in the side chain of non-energy ray curable adhesive resin (I-1a) I-2a) (hereinafter sometimes referred to as "adhesive resin (I-2a)"); and an adhesive composition (I-3) containing the aforementioned adhesive resin (I-2a) and an energy ray curable compound.

[Adhesive composition (I-1)] The aforementioned adhesive composition (I-1) contains a non-energy-ray-curable adhesive resin (I-1a) and an energy-ray-curable compound as described above.

[Adhesive resin (I-1a)] The aforementioned adhesive resin (I-1a) is preferably an acrylic resin. As said acrylic resin, the acrylic polymer which has at least the structural unit derived from the alkyl (meth)acrylate is mentioned, for example. The aforementioned acrylic resin may have only one type of structural unit, or two or more types. In the case of two or more types, the combination and ratio of these structural units can be arbitrarily selected.

The adhesive composition (I-1) contains only one type of adhesive resin (I-1a), or two or more types. In the case of two or more types, these adhesive resins (I-1a) The combination and ratio can be chosen arbitrarily.

In the adhesive composition (I-1), the ratio of the content of the adhesive resin (I-1a) to the total mass of the adhesive composition (I-1) is preferably 5 to 99% by mass, and more It is preferably 10% by mass to 95% by mass, and particularly preferably 15% by mass to 90% by mass.

[Energy ray hardening compound] Examples of the energy ray curable compound contained in the adhesive composition (I-1) include monomers or oligomers that have an energy ray polymerizable unsaturated group and can be cured by energy ray irradiation. Among the energy ray curable compounds, examples of monomers include trimethylolpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, (Meth)acrylates such as acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol (meth)acrylate, etc.; (meth)acrylic urethane Acid ester; polyester (meth)acrylate; polyether (meth)acrylate; epoxy (meth)acrylate, etc. Among the energy ray-curable compounds, examples of the oligomer include oligomers obtained by polymerizing the monomers exemplified above. The energy ray curable compound is preferably (meth)acrylate urethane and (meth)acrylate urethane in terms of relatively large molecular weight and difficult to reduce the storage elastic modulus of the adhesive layer. Ester oligomers.

The aforementioned energy ray curable compound contained in the adhesive composition (I-1) may be only one type or two or more types. In the case of two or more types, the combination and ratio of these energy ray curable compounds may be Free to choose.

In the adhesive composition (I-1), the ratio of the content of the aforementioned energy ray curable compound to the total mass of the adhesive composition (I-1) is preferably 1% to 95% by mass, more preferably 5 mass% to 90 mass%, particularly preferably 10 mass% to 85% by mass.

[Crosslinking agent] For the use of the aforementioned acrylic polymer having structural units derived from functional group-containing monomers in addition to structural units derived from alkyl (meth)acrylates as adhesive resins (I-1a) In this case, the adhesive composition (I-1) preferably further contains a crosslinking agent.

The crosslinking agent reacts with the functional group, for example, to crosslink the adhesive resins (I-1a). Examples of the crosslinking agent include isocyanate-based crosslinking agents (crosslinking agents having isocyanate groups) such as toluene diisocyanate, hexamethylene diisocyanate, xylene diisocyanate, and adducts of these diisocyanates; ethylene diisocyanate Epoxy crosslinking agents such as alcohol glycidyl ether (crosslinking agents with glycidyl groups); aziridine crosslinking agents such as hexa[1-(2-methyl)-aziridinyl] triphosphatriazine Agent (crosslinking agent with aziridinyl group); metal chelate crosslinking agent such as aluminum chelate (crosslinking agent with metal chelate structure); isocyanurate crosslinking agent (with Crosslinking agent of isocyanuric acid skeleton) and so on. The crosslinking agent is preferably an isocyanate-based crosslinking agent in terms of enhancing the cohesive force of the adhesive and enhancing the adhesive force of the adhesive layer, as well as easy availability.

The adhesive composition (I-1) may contain only one type of crosslinking agent, or two or more types. In the case of two or more types, the combination and ratio of these crosslinking agents can be arbitrarily selected.

In the case of using a crosslinking agent, in the aforementioned adhesive composition (I-1), the content of the crosslinking agent is preferably 0.01 parts by mass to 100 parts by mass of the adhesive resin (I-1a). 50 parts by mass, more preferably 0.1 to 20 parts by mass, particularly preferably 0.3 to 15 parts by mass.

[Photopolymerization initiator] The adhesive composition (I-1) may further contain a photopolymerization initiator. The adhesive composition (I-1) containing a photopolymerization initiator fully undergoes a curing reaction even if it is irradiated with relatively low-energy energy rays such as ultraviolet rays.

Examples of the aforementioned photopolymerization initiator include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal. ; Acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, 2,2-dimethoxy-1,2-diphenylethane-1-one, etc. Ketone compounds; bis(2,4,6-trimethylbenzyl)phenyl phosphine oxide, 2,4,6-trimethylbenzyl diphenyl phosphine oxide, etc. Compounds; sulfide compounds such as benzyl phenyl sulfide and tetramethylthiuram monosulfide; α-ketol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; dicene Titanocene compounds such as titanium; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; benzidine; benzil; benzophenone; 2,4-diethyl Thioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl] acetone; 2-chloroanthraquinone and the like. In addition, as the aforementioned photopolymerization initiator, for example, quinone compounds such as 1-chloroanthraquinone; photosensitizers such as amines, and the like can also be used.

The photopolymerization initiator contained in the adhesive composition (I-1) may be only one type or two or more types. In the case of two or more types, the combination and ratio of these photopolymerization initiators can be arbitrary choose.

In the case of using a photopolymerization initiator, in the adhesive composition (I-1), the content of the photopolymerization initiator is preferably 0.01 parts by mass relative to 100 parts by mass of the aforementioned energy ray curable compound It is 20 parts by mass, more preferably 0.03 parts by mass to 10 parts by mass, and particularly preferably 0.05 parts by mass to 5 parts by mass.

[Other additives] The adhesive composition (I-1) may also contain other additives that are not equivalent to any of the above-mentioned components within a range that does not impair the efficacy of the present invention. Examples of the aforementioned other additives include: antistatic agents, antioxidants, softeners (plasticizers), fillers (fillers), rust inhibitors, colorants (pigments, dyes), sensitizers, tackifiers, Known additives such as reaction delay agents and crosslinking accelerators (catalysts).

Furthermore, the so-called reaction delay agent, for example, is used to inhibit the effect of the catalyst mixed into the adhesive composition (I-1), which causes untargeted progress in the adhesive composition (I-1) during storage. The components of the cross-linking reaction. Examples of the reaction delay agent include those that form chelate complexes by chelation to a catalyst, and more specifically include those having two or more carbonyl groups (-C(=O)-) in one molecule.

The other additives contained in the adhesive composition (I-1) may be only one type or two or more types. In the case of two or more types, the combination and ratio of these other additives may be arbitrarily selected.

The content of the other additives of the adhesive composition (I-1) is not particularly limited, as long as it is appropriately selected according to the kind.

[Solvent] The adhesive composition (I-1) may also contain a solvent. By containing a solvent, the adhesive composition (I-1) has improved applicability to the surface to be coated.

The aforementioned solvent is preferably an organic solvent.

[Adhesive composition (I-2)] As mentioned above, the aforementioned adhesive composition (I-2) is contained in the side chain of the non-energy-ray-curable adhesive resin (I-1a) and the energy-ray-curable adhesive resin (I-1a) with unsaturated groups introduced into the side chain -2a).

[Adhesive resin (I-2a)] The aforementioned adhesive resin (I-2a) is obtained, for example, by reacting an unsaturated group-containing compound having an energy-ray polymerizable unsaturated group with a functional group in the adhesive resin (I-1a).

The aforementioned unsaturated group-containing compound has, in addition to the aforementioned energy ray polymerizable unsaturated group, it has the ability to bond with the adhesive resin (I-1a) by reacting with the functional group in the adhesive resin (I-1a) The base compound. As said energy ray polymerizable unsaturated group, (meth)acrylic acid group, vinyl (ethenyl), allyl (2-propenyl) etc. are mentioned, for example, Preferably it is a (meth)acrylic acid group. Examples of groups capable of bonding to functional groups in the adhesive resin (I-1a) include isocyanate groups and glycidyl groups capable of bonding to hydroxyl groups or amino groups, and groups capable of bonding to carboxyl groups or epoxy groups. The hydroxyl and amino groups, etc.

Examples of the aforementioned unsaturated group-containing compound include (meth)acryloyloxyethyl isocyanate, (meth)acryloyl isocyanate, glycidyl (meth)acrylate, and the like.

The adhesive composition (I-2) contains only one type of adhesive resin (I-2a), or two or more types. In the case of two or more types, these adhesive resins (I-2a) The combination and ratio can be chosen arbitrarily.

In the adhesive composition (I-2), the ratio of the content of the adhesive resin (I-2a) to the total mass of the adhesive composition (I-2) is preferably 5 to 99% by mass, and more It is preferably 10% by mass to 95% by mass, and particularly preferably 10% by mass to 90% by mass.

[Crosslinking agent] For example, when the aforementioned acrylic polymer having the same structural unit derived from a functional group-containing monomer as in the adhesive resin (I-1a) is used as the adhesive resin (I-2a), the adhesive composition ( I-2) may further contain a crosslinking agent.

Examples of the aforementioned crosslinking agent in the adhesive composition (I-2) include the same ones as the crosslinking agent in the adhesive composition (I-1). The adhesive composition (I-2) may contain only one type of crosslinking agent, or two or more types. In the case of two or more types, the combination and ratio of these crosslinking agents can be arbitrarily selected.

In the case of using a crosslinking agent, in the aforementioned adhesive composition (I-2), the content of the crosslinking agent is preferably 0.01 parts by mass to 100 parts by mass of the adhesive resin (I-2a). 50 parts by mass, more preferably 0.1 to 20 parts by mass, particularly preferably 0.3 to 15 parts by mass.

[Photopolymerization initiator] The adhesive composition (I-2) may further contain a photopolymerization initiator. The adhesive composition (I-2) containing a photopolymerization initiator fully undergoes a curing reaction even if it is irradiated with relatively low-energy energy rays such as ultraviolet rays.

Examples of the aforementioned photopolymerization initiator in the adhesive composition (I-2) include the same ones as the photopolymerization initiator in the adhesive composition (I-1). The photopolymerization initiator contained in the adhesive composition (I-2) may be only one type or two or more types. In the case of two or more types, the combination and ratio of these photopolymerization initiators can be arbitrary choose.

In the case of using a photopolymerization initiator, in the adhesive composition (I-2), the content of the photopolymerization initiator is preferably 0.01 with respect to 100 parts by mass of the adhesive resin (I-2a) Parts by mass to 20 parts by mass, more preferably 0.03 parts by mass to 10 parts by mass, particularly preferably 0.05 parts by mass to 5 parts by mass.

[Other additives, solvents] The adhesive composition (I-2) may also contain other additives that do not correspond to any of the above-mentioned components within a range that does not impair the efficacy of the present invention. In addition, the adhesive composition (I-2) may contain a solvent for the same purpose as in the case of the adhesive composition (I-1). As the aforementioned other additives and solvents in the adhesive composition (I-2), the same ones as the other additives and solvents in the adhesive composition (I-1) can be cited, respectively. The other additives and solvents contained in the adhesive composition (I-2) may be only one type, or two or more types. In the case of two or more types, the combination and ratio of these other additives and solvents can be arbitrarily selected . The content of the other additives and the solvent of the adhesive composition (I-2) is not particularly limited, and may be appropriately selected according to the type.

[Adhesive composition (I-3)] As described above, the adhesive composition (I-3) contains the adhesive resin (I-2a) and an energy ray curable compound.

In the adhesive composition (I-3), the ratio of the content of the adhesive resin (I-2a) to the total mass of the adhesive composition (I-3) is preferably 5 to 99% by mass, and more It is preferably 10% by mass to 95% by mass, and particularly preferably 15% by mass to 90% by mass.

[Energy ray hardening compound] Examples of the aforementioned energy ray curable compound contained in the adhesive composition (I-3) include monomers and oligomers that have energy ray polymerizable unsaturated groups and can be cured by energy ray irradiation, including It is the same as the energy ray curable compound contained in the adhesive composition (I-1). The aforementioned energy ray curable compound contained in the adhesive composition (I-3) may be only one type or two or more types. In the case of two or more types, the combination and ratio of these energy ray curable compounds may be Free to choose.

In the aforementioned adhesive composition (I-3), relative to 100 parts by mass of the adhesive resin (I-2a), the content of the aforementioned energy ray curable compound is preferably 0.01 to 300 parts by mass, more preferably It is 0.03 parts by mass to 200 parts by mass, particularly preferably 0.05 parts by mass to 100 parts by mass.

[Photopolymerization initiator] The adhesive composition (I-3) may further contain a photopolymerization initiator. The adhesive composition (I-3) containing a photopolymerization initiator fully undergoes a curing reaction even if it is irradiated with a relatively low-energy energy line such as ultraviolet rays.

Examples of the aforementioned photopolymerization initiator in the adhesive composition (I-3) include the same ones as the photopolymerization initiator in the adhesive composition (I-1). The adhesive composition (I-3) may contain only one type of photopolymerization initiator, or two or more types. In the case of two or more types, the combination and ratio of these photopolymerization initiators can be arbitrary choose.

In the case of using a photopolymerization initiator, in the adhesive composition (I-3), with respect to 100 parts by mass of the total content of the adhesive resin (I-2a) and the aforementioned energy ray curable compound, the photopolymerization The content of the starting agent is preferably 0.01 parts by mass to 20 parts by mass, more preferably 0.03 parts by mass to 10 parts by mass, and particularly preferably 0.05 parts by mass to 5 parts by mass.

[Other additives, solvents] The adhesive composition (I-3) may also contain other additives that are not equivalent to any of the above-mentioned components within a range that does not impair the efficacy of the present invention. In addition, the adhesive composition (I-3) may contain a solvent for the same purpose as in the case of the adhesive composition (I-1). As the aforementioned other additives and solvents in the adhesive composition (I-3), the same ones as the other additives and solvents in the adhesive composition (I-1) can be cited, respectively. The other additives and solvents contained in the adhesive composition (I-3) may be only one type, or two or more types. In the case of two or more types, the combination and ratio of these other additives and solvents can be arbitrarily selected . The content of the other additives and the solvent of the adhesive composition (I-3) is not particularly limited, and may be appropriately selected according to the type.

[Adhesive composition (I-1) to adhesive composition other than adhesive composition (I-3)] So far, the adhesive composition (I-1), the adhesive composition (I-2), and the adhesive composition (I-3) have been mainly described, but the description can also be made as the components contained in these The same applies to all adhesive compositions other than these three adhesive compositions (in this specification, referred to as "adhesive composition (I-1) to adhesive composition other than adhesive composition (I-3)) ").

As the adhesive composition other than the adhesive composition (I-1) to the adhesive composition (I-3), in addition to the energy-ray-curable adhesive composition, non-energy-ray-curable adhesives can also be cited Composition. Examples of non-energy-ray curable adhesive compositions include acrylic resins, urethane resins, rubber resins, silicone resins, epoxy resins, polyvinyl ethers, polycarbonates, and esters. The adhesive composition (I-4) of a non-energy-ray curable adhesive resin (I-1a) such as resin preferably contains an acrylic resin.

Adhesive compositions other than the adhesive composition (I-1) to the adhesive composition (I-3) preferably contain one or two or more cross-linking agents, and the content of the cross-linking agent can be set to be the same as the above The same applies to the adhesive composition (I-1).

[Adhesive composition (I-4)] As a preferable one among the adhesive composition (I-4), the adhesive composition containing the said adhesive resin (I-1a) and a crosslinking agent is mentioned, for example.

[Adhesive resin (I-1a)] Examples of the adhesive resin (I-1a) in the adhesive composition (I-4) include those that are the same as the adhesive resin (I-1a) in the adhesive composition (I-1). The adhesive composition (I-4) contains only one type of adhesive resin (I-1a), or two or more types. In the case of two or more types, these adhesive resins (I-1a) The combination and ratio can be chosen arbitrarily.

In the adhesive composition (I-4), the ratio of the content of the adhesive resin (I-1a) to the total mass of the adhesive composition (I-4) is preferably 5 to 99% by mass, and more It is preferably 10% by mass to 95% by mass, and particularly preferably 15% by mass to 90% by mass.

[Crosslinking agent] When using the aforementioned acrylic polymer having structural units derived from functional group-containing monomers in addition to the structural units derived from alkyl (meth)acrylate as the adhesive resin (I-1a), adhesion The agent composition (I-4) preferably further contains a crosslinking agent.

As the crosslinking agent in the adhesive composition (I-4), the same as the crosslinking agent in the adhesive composition (I-1) can be cited. The adhesive composition (I-4) may contain only one type of crosslinking agent, or two or more types. In the case of two or more types, the combination and ratio of these crosslinking agents can be arbitrarily selected.

In the aforementioned adhesive composition (I-4), relative to 100 parts by mass of the adhesive resin (I-1a), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass, more preferably 0.1 parts by mass Parts to 25 parts by mass, particularly preferably 0.1 parts by mass to 10 parts by mass.

[Other additives, solvents] The adhesive composition (I-4) may also contain other additives that are not equivalent to any of the above-mentioned components within a range that does not impair the efficacy of the present invention. In addition, the adhesive composition (I-4) may contain a solvent for the same purpose as in the case of the adhesive composition (I-1). As the aforementioned other additives and solvents in the adhesive composition (I-4), the same ones as the other additives and solvents in the adhesive composition (I-1) can be cited, respectively. The other additives and solvents contained in the adhesive composition (I-4) may be only one type, or two or more types. In the case of two or more types, the combination and ratio of these other additives and solvents can be arbitrarily selected . The content of the other additives and the solvent of the adhesive composition (I-4) is not particularly limited, and can be appropriately selected according to the type.

[Manufacturing method of adhesive composition] Adhesive composition (I-1) to adhesive composition (I-3) or adhesive composition (I-4) and other adhesive composition (I-1) to adhesive composition (I-3) The adhesive composition is obtained by blending the aforementioned adhesive, and components other than the aforementioned adhesive, if necessary, to form the adhesive composition. The order of addition of each component is not particularly limited, and two or more components may be added at the same time. When a solvent is used, it can be used by pre-diluting the compounding component by mixing the solvent with any compounding component other than the solvent, or not pre-diluting any compounding component other than the solvent, but by combining the solvent with these The ingredients are mixed and used. The method of mixing each component at the time of compounding is not particularly limited, as long as it is appropriately selected from known methods such as the following methods: a method of mixing by rotating a stirrer or a stirring blade; a method of mixing using a mixer; application The method of ultrasonic mixing. The temperature and time during the addition and mixing of the components are not particularly limited as long as the components do not deteriorate, and they may be adjusted appropriately, and the temperature is preferably 15°C to 30°C.

○Intermediate layer, composition for forming an intermediate layer The intermediate layer is in the form of a sheet or film and contains the non-silicon resin as a main component. The intermediate layer may contain only non-silicon-based resin (constituted only of non-silicon-based resin), or may contain non-silicon-based resin and components other than the non-silicon-based resin.

The intermediate layer can be formed using, for example, a composition for forming an intermediate layer containing the aforementioned non-silicon resin. For example, the intermediate layer can be formed by applying the aforementioned composition for forming the intermediate layer on the surface to be formed of the intermediate layer and drying if necessary.

The weight average molecular weight of the aforementioned non-silicone resin is 100,000 or less. In terms of further improvement in the splitting suitability of the semiconductor wafer of the semiconductor device manufacturing sheet, the weight average molecular weight of the non-silicon resin may be any of 80,000 or less, 60,000 or less, and 40,000 or less, for example.

The lower limit of the weight average molecular weight of the non-silicone resin is not particularly limited. For example, the non-silicone resin having a weight average molecular weight of 5000 or more is easier to obtain.

The weight average molecular weight of the aforementioned non-silicone resin can be appropriately adjusted within a range set by arbitrarily combining the above-mentioned lower limit and any upper limit. For example, in one embodiment, the aforementioned weight average molecular weight may be any of 5000 to 100,000, 5,000 to 80,000, 5,000 to 60,000, and 5,000 to 40,000, for example.

In this embodiment, the phrase "the intermediate layer contains a non-silicone resin with a weight average molecular weight of 100,000 or less as the main component" means that "the intermediate layer can fully function by containing a non-silicon resin with a weight average molecular weight of 100,000 or less. The amount of the effect obtained contains the aforementioned non-silicone resin". From this point of view, in the intermediate layer, the ratio of the content of the aforementioned non-silicon-based resin to the total mass of the intermediate layer (in other words, in the composition for forming the intermediate layer, the content of the aforementioned non-silicon-based resin relative to the solvent other than The ratio of the total content of all components) is preferably 50% by mass or more, more preferably 80% by mass or more, and more preferably 90% by mass or more, for example, 95% by mass or more, 97% by mass or more, and 99% by mass or more Any of them. On the other hand, the aforementioned ratio is 100% by mass or less.

The aforementioned non-silicon resin having a weight average molecular weight of 100,000 or less is not particularly limited as long as it is a resin component having a weight average molecular weight of 100,000 or less that does not have silicon atoms as constituent atoms. The aforementioned non-silicon-based resin may be, for example, any of a polar resin having a polar group and a non-polar resin having no polar group. For example, the non-silicon-based resin is preferably a polar resin in terms of high solubility in the intermediate layer forming composition and higher coating suitability of the intermediate layer forming composition.

In this specification, unless otherwise specified, the so-called "non-silicone resin" means the non-silicone resin having the above-mentioned weight average molecular weight of 100,000 or less.

The aforementioned non-silicon-based resin may be, for example, a homopolymer of one type of monomer (in other words, having only one type of constituent unit), or a polymer of two or more types of monomers (in other words, having two or more types of monomers). Constituent unit) copolymer.

As said polar group, a carbonyloxy group (-C(=O)-O-), an oxycarbonyl group (-O-C(=O)-), etc. are mentioned, for example.

The aforementioned polar resin may contain only a structural unit having a polar group, or may contain both a structural unit having a polar group and a structural unit not having a polar group.

As a structural unit which has the said polar group, the structural unit derived from vinyl acetate etc. are mentioned, for example. As a structural unit which does not have the said polar group, the structural unit derived from ethylene, etc. are mentioned, for example. The so-called "derivatization" mentioned here means the structural change required by the polymerization of the aforementioned monomers.

In the aforementioned polar resin, the ratio of the mass of the constituent unit having a polar group to the total mass of all constituent units is preferably from 5 to 70% by mass, for example, from 7.5% to 55% by mass, or from 10% by mass to 10% by mass. Any one of 40% by mass and 10% by mass to 30% by mass. In other words, in the aforementioned polar resin, the ratio of the mass of the constituent unit without a polar group to the total mass of all constituent units is preferably 30% to 95% by mass, for example, it can be 45% to 92.5% by mass, 60% by mass. Any one of mass% to 90 mass% and 70 mass% to 90 mass%. Since the ratio of the mass of the constituent unit having the polar group is more than the aforementioned lower limit, the aforementioned polar resin has the characteristic of containing the polar group more remarkably. When the ratio of the mass of the constituent unit having the polar group is below the aforementioned upper limit, the aforementioned polar resin has the characteristic of not containing the polar group more moderately.

As said polar resin, ethylene-vinyl acetate copolymer etc. are mentioned, for example. The ratio of the content of the ethylene-vinyl acetate copolymer contained in the intermediate layer to the total mass of the non-silicon resin may be, for example, 50% to 100% by mass, 80% to 100% by mass, or 90% to 100% by mass. Among them, preferred polar resins include, for example, the ratio of the mass of structural units derived from vinyl acetate to the total mass of all structural units in an ethylene-vinyl acetate copolymer (in this specification, sometimes Referred to as "the content of constituent units derived from vinyl acetate") ethylene-vinyl acetate copolymer of 40% by mass or less; ethylene-vinyl acetate copolymer with the above ratio of 30% by mass or less; the above ratio is 10% by mass % To 40% by mass of ethylene-vinyl acetate copolymer; the above ratio is 10% to 30% by mass of ethylene-vinyl acetate copolymer. In other words, as a preferred polar resin, for example, in an ethylene-vinyl acetate copolymer, ethylene-acetic acid in which the ratio of the mass of the structural unit derived from ethylene to the total mass of all the structural units is 60% by mass or more is mentioned. Vinyl ester copolymer; ethylene-vinyl acetate copolymer with the above ratio of 70% by mass or more; ethylene-vinyl acetate copolymer with the above ratio of 70% to 90% by mass; the above ratio of 60% to 90% by mass The ethylene-vinyl acetate copolymer. Since the ratio of the content of the constituent units derived from vinyl acetate is below the aforementioned upper limit, even if cutting chips are generated from the intermediate layer when the film-like adhesive is cut, the adhesive force of the generated cutting chips is moderately reduced. The cutting chips are easily removed from the wafer by cleaning or the like.

Examples of the aforementioned non-polar resin include: low density polyethylene (LDPE), linear low density polyethylene (LLDPE), metallocene catalyst linear low density polyethylene (metallocene LLDPE), medium density polyethylene (MDPE), high-density polyethylene (HDPE) and other polyethylene (PE); polypropylene (PP), etc.

The composition for forming the intermediate layer and the aforementioned non-silicon resin contained in the intermediate layer may be only one type or two or more types. In the case of two or more types, the combination and ratio of these non-silicon type resins can be arbitrarily selected . For example, the composition for forming the intermediate layer and the intermediate layer may contain one or more non-silicon resins as polar resins and no non-silicon resins as non-polar resins, or one or two or more non-silicon resins as non-polar resins. Polar resins are non-silicon resins and contain non-silicon resins as polar resins, and can also contain one or more of non-silicon resins as polar resins and non-silicon resins as non-polar resins. The composition for forming an intermediate layer and the intermediate layer preferably contain at least a non-silicon resin as a polar resin.

In the composition for forming the intermediate layer and the intermediate layer, the ratio of the content of the aforementioned non-silicon-based resin as the polar resin to the total content of the aforementioned non-silicon-based resin is preferably 50% by mass or more, more preferably 80% by mass or more , More preferably 90% by mass or more, for example, it may be any of 95% by mass or more, 97% by mass or more, and 99% by mass or more. When the aforementioned ratio is equal to or higher than the aforementioned lower limit, the effect obtained by using the aforementioned polar resin can be more remarkably obtained. On the other hand, the aforementioned ratio is 100% by mass or less.

That is, in the composition for forming the intermediate layer and the intermediate layer, the ratio of the content of the non-silicon-based resin as the non-polar resin to the total content of the non-silicon-based resin is preferably 20% by mass or less, more preferably 10% by mass or less, for example, may be any of 5% by mass or less, 3% by mass or less, and 1% by mass or less. On the other hand, the aforementioned ratio is 0% by mass or more.

In terms of good workability, the composition for forming an intermediate layer preferably contains a solvent in addition to the aforementioned non-silicon-based resin, and may also contain a component that does not correspond to any of the aforementioned non-silicon-based resin and solvent ( In this specification, sometimes referred to as "additives"). The intermediate layer may contain only the aforementioned non-silicon-based resin, or the aforementioned non-silicon-based resin and the aforementioned additives together.

The aforementioned additives may be either a resin component (in this specification, sometimes referred to as "other resin component") and a non-resin component.

As the aforementioned other resin component, for example, a non-silicon-based resin having a weight average molecular weight (Mw) exceeding 100,000 and a silicone-based resin can be cited.

A non-silicone resin with a weight average molecular weight exceeding 100,000 is not particularly limited as long as it satisfies such conditions.

The intermediate layer containing the aforementioned silicon-based resin, as described later, makes it easier to pick up semiconductor wafers with a film-like adhesive.

The aforementioned silicon-based resin is not particularly limited as long as it is a resin component having silicon atoms as constituent atoms. For example, the weight average molecular weight of the silicone resin is not particularly limited.

As a preferable silicon resin, for example, a resin component that exhibits a mold release effect on the adhesive component can be cited, more preferably a silicone resin (resin component having a silicone bond (-Si-O-Si-), also Known as silicone compounds).

As said silicone resin, polydialkylsiloxane etc. are mentioned, for example. The carbon number of the alkyl group of the aforementioned polydialkylsiloxane is preferably 1-20. As said polydialkylsiloxane, polydimethylsiloxane etc. are mentioned.

The aforementioned non-resin component may be any of an organic compound and an inorganic compound, for example, and is not particularly limited.

The composition for forming an intermediate layer and the aforementioned additives contained in the intermediate layer may be only one type or two or more types. In the case of two or more types, the combination and ratio of these additives can be arbitrarily selected. For example, as the aforementioned additives, the composition for forming the intermediate layer and the intermediate layer may contain one or more resin components without non-resin components, or one or two or more non-resin components without resin components. It can also contain one or more than two resin components and non-resin components.

When the composition for forming an intermediate layer and the intermediate layer contain the aforementioned additives, the ratio of the content of the aforementioned non-silicon-based resin to the total mass of the intermediate layer in the intermediate layer (in other words, in the composition for forming an intermediate layer, The ratio of the content of the aforementioned non-silicone resin to the total content of all components other than the solvent) is preferably 90% to 99.99% by mass, for example, 90% to 97.5% by mass, 90% to 95% by mass, and Any one of 90% by mass to 92.5% by mass may also be any of 92.5% by mass to 99.99% by mass, 95% by mass to 99.99% by mass, and 97.5% by mass to 99.99% by mass, and may also be from 92.5% by mass to 97.5 mass%. When the composition for forming the intermediate layer and the intermediate layer contain the aforementioned additives, the ratio of the content of the aforementioned additives in the intermediate layer to the total mass of the intermediate layer (in other words, in the composition for forming the intermediate layer, the ratio of the aforementioned additives The ratio of the content to the total content of all ingredients other than the solvent) is preferably 0.01% by mass to 10% by mass, for example, 2.5% by mass to 10% by mass, 5% by mass to 10% by mass, and 7.5% by mass to 10% by mass. Any of% may be any of 0.01% to 7.5% by mass, 0.01% to 5% by mass, and 0.01% to 2.5% by mass, or 2.5% to 7.5% by mass.

The aforementioned solvent contained in the composition for forming the intermediate layer is not particularly limited, but preferred examples include hydrocarbons such as toluene and xylene; methanol, ethanol, 2-propanol, isobutanol (2-methylpropane -1-ol), 1-butanol and other alcohols; ethyl acetate and other esters; acetone, methyl ethyl ketone and other ketones; tetrahydrofuran and other ethers; dimethylformamide, N-methylpyrrolidone and other amides (Compounds with amide bond) and so on. The solvent contained in the composition for forming an intermediate layer may be only one type or two or more types. In the case of two or more types, the combination and ratio of these solvents can be arbitrarily selected.

The solvent contained in the composition for forming an intermediate layer is preferably tetrahydrofuran or the like from the viewpoint that the components contained in the composition for forming an intermediate layer can be mixed more uniformly.

The content of the solvent in the composition for forming an intermediate layer is not particularly limited, and may be appropriately selected according to the types of components other than the solvent, for example.

As will be described later, in terms of making it easier to pick up semiconductor wafers with a film-like adhesive, a preferable intermediate layer includes, for example, ethylene-vinyl acetate copolymer containing as the aforementioned non-silicon-based resin, and As the aforementioned additive silicone compound, the ratio of the content of the aforementioned ethylene-vinyl acetate copolymer (the aforementioned non-silicone resin) in the intermediate layer to the total mass of the intermediate layer is in any of the above numerical ranges, and the intermediate layer The ratio of the content of the aforementioned silicone compound (the aforementioned additive) to the total mass of the intermediate layer in any of the aforementioned numerical ranges. For example, as such an intermediate layer, the ethylene-vinyl acetate copolymer containing the non-silicon resin and the silicone compound as the additive may be mentioned, and the ethylene-vinyl acetate copolymer in the intermediate layer The ratio of the content relative to the total mass of the intermediate layer is 90% to 99.99% by mass, and the content of the aforementioned silicone compound in the intermediate layer relative to the total mass of the intermediate layer is 0.01% to 10% by mass . However, this is an example of a preferred intermediate layer.

As a more preferable intermediate layer, for example, the intermediate layer contains an ethylene-vinyl acetate copolymer as the non-silicon resin and a silicone compound as the additive, in the ethylene-vinyl acetate copolymer , The ratio of the mass of the constituent units derived from vinyl acetate to the total mass of all the constituent units (in other words, the content of the constituent units derived from vinyl acetate) is 10% to 40% by mass. In the aforementioned intermediate layer, the aforementioned The ratio of the content of the ethylene-vinyl acetate copolymer to the total mass of the intermediate layer is 90% to 99.99% by mass, and the content of the silicone compound in the intermediate layer is relative to the total mass of the intermediate layer The ratio of is 0.01% by mass to 10% by mass. However, this is an example of a better middle layer.

In the semiconductor device manufacturing sheet, the film-like adhesive side surface of the intermediate layer (for example, in Figure 1 When the first surface 13a of the intermediate layer 13 is analyzed, the ratio of the concentration of silicon to the total concentration of carbon, oxygen, nitrogen, and silicon (in this specification, sometimes referred to as "the ratio of silicon concentration") is preferably It is 1% to 20% based on the molar basis of the element. By using a semiconductor device manufacturing sheet provided with such an intermediate layer, as will be described later, a semiconductor wafer with a film-like adhesive can be picked up more easily.

The ratio of the aforementioned silicon concentration can be calculated by the following formula. [Measured value of silicon concentration in XPS analysis (atomic %)]/{[Measured value of carbon concentration in XPS analysis (atomic %)] + [Measured value of oxygen concentration in XPS analysis (atomic %) ] + [Measured value of nitrogen concentration in XPS analysis (atomic %)] + [Measured value of silicon concentration in XPS analysis (atomic %)]}×100.

XPS analysis can use an X-ray photoelectron spectroscopic analysis device (such as "Quantra SXM" manufactured by Ulvac) for the surface of the intermediate layer on the film adhesive side, with an irradiation angle of 45°, an X-ray beam diameter of 20μmφ, Output under the condition of 4.5W.

In terms of this effect becoming more significant, the ratio of the aforementioned silicon concentration can be any of 4% to 20%, 8% to 20%, and 12% to 20% based on the molar basis of the element, for example. It may be any of 1% to 16%, 1% to 12%, and 1% to 8%, or any of 4% to 16% and 8% to 12%.

When the XPS analysis is performed as described above, it is possible to detect other elements that are not equivalent to any of carbon, oxygen, nitrogen, and silicon on the aforementioned surface of the intermediate layer (the surface to be analyzed by XPS). However, usually even if the aforementioned other elements are detected, the concentration of the other elements is still very small. Therefore, when calculating the ratio of the aforementioned silicon concentration, as long as the measured values of the concentrations of carbon, oxygen, nitrogen and silicon are used, the aforementioned can be calculated with high accuracy. The ratio of silicon concentration.

The intermediate layer may be composed of one layer (single layer), or may be composed of two or more layers. In the case of being composed of multiple layers, these layers may be the same or different from each other, and the combination of these layers is not particularly limited.

As explained above, the maximum value of the width of the intermediate layer is preferably smaller than the maximum value of the width of the adhesive layer and the maximum value of the width of the substrate. The maximum width of the intermediate layer can be appropriately selected in consideration of the size of the semiconductor wafer. For example, the maximum width of the intermediate layer can also be 150mm to 160mm, 200mm to 210mm, or 300mm to 310mm. These three numerical ranges correspond to a semiconductor wafer with a maximum width of 150 mm, a maximum width of 200 mm, or a width relative to the direction parallel to the attaching surface of the semiconductor device manufacturing sheet. A semiconductor wafer with a maximum of 300mm. However, as described above, when the film-like adhesive is cut by expanding the semiconductor device manufacturing sheet after dicing accompanying the formation of the modified layer in the semiconductor wafer, as described later, the dicing After that, a plurality of semiconductor wafers (semiconductor wafer groups) are regarded as a whole, and a semiconductor device manufacturing sheet is attached to these semiconductor wafers.

In this specification, unless otherwise specified, the "width of the intermediate layer" means, for example, the "width of the intermediate layer in a direction parallel to the first surface of the intermediate layer". For example, when the planar shape is a circular intermediate layer, the maximum value of the width of the intermediate layer becomes the diameter of the circle that is the planar shape. This situation is the same in the case of semiconductor wafers. That is, the "width of the semiconductor wafer" means the "width of the semiconductor wafer in a direction parallel to the attachment surface of the semiconductor device manufacturing sheet". For example, in the case of a semiconductor wafer whose planar shape is a circular shape, the maximum value of the width of the semiconductor wafer becomes the diameter of the circle that is the planar shape.

The maximum value of the width of the intermediate layer of 150mm to 160mm means that the maximum value of the width of the semiconductor wafer of 150mm is equal to or less than 10mm. Similarly, the maximum width of the intermediate layer of 200 mm to 210 mm means that the maximum width of the semiconductor wafer of 200 mm is equal to or less than 10 mm. Similarly, the maximum value of the width of the intermediate layer of 300mm to 310mm means the maximum value of the width of the semiconductor wafer of 300mm is equal to or less than 10mm. That is, in this embodiment, no matter which the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm, the difference between the maximum width of the intermediate layer and the maximum width of the semiconductor wafer may be, for example, 0 mm to 10 mm .

The thickness of the intermediate layer can be appropriately selected according to the purpose, preferably 5 μm to 150 μm, more preferably 5 μm to 120 μm, for example, any of 10 μm to 90 μm and 10 μm to 60 μm, or 30 μm to 120 μm and 60 μm to 120 μm Any of them. By the thickness of the intermediate layer being above the aforementioned lower limit, the structure of the intermediate layer becomes more stable. When the thickness of the intermediate layer is not more than the aforementioned upper limit, the film-like adhesive can be cut more easily at the time of blade dicing and the aforementioned expansion of the semiconductor device manufacturing sheet. Here, the "thickness of the intermediate layer" means the thickness of the entire intermediate layer. For example, the thickness of the intermediate layer composed of multiple layers means the total thickness of all the layers constituting the intermediate layer.

When the intermediate layer contains the aforementioned silicon-based resin, especially when the compatibility between the silicon-based resin and the aforementioned non-silicon-based resin as the main component is low, the silicon-based resin in the intermediate layer in the semiconductor device manufacturing sheet It tends to be concentrated on both sides of the intermediate layer (the first surface and the surface on the opposite side) and the vicinity thereof. In addition, the stronger this tendency, the easier the film-like adhesive adjacent to (directly in contact with) the intermediate layer is peeled from the intermediate layer, and the semiconductor wafer with the film-like adhesive can be picked up more easily as described later. For example, when comparing interlayers that differ only in thickness from each other but are the same in terms of composition, the area of the two surfaces, and other thicknesses, the content of the silicone resin in these interlayers is relative to the total of the interlayers. The mass ratios (mass %) are the same as each other. However, the content (parts by mass) of the silicon-based resin in the intermediate layer is more thick in the intermediate layer than in the thinner intermediate layer. Therefore, when the silicon-based resin is easily concentrated in the intermediate layer as described above, the thick intermediate layer is concentrated on both sides (the first surface and the surface on the opposite side) compared to the thinner intermediate layer. The amount of silicone resin in the vicinity of the area increases. Therefore, even if the aforementioned ratio is not changed, the pick-up suitability of the semiconductor wafer with the film-like adhesive can be adjusted by adjusting the thickness of the intermediate layer in the semiconductor device manufacturing sheet. For example, by increasing the thickness of the intermediate layer in the semiconductor device manufacturing sheet, the semiconductor wafer with the film-like adhesive can be picked up more easily.

The intermediate layer can be formed using an adhesive composition containing the constituent material of the intermediate layer. For example, the adhesive composition can be applied to the surface to be formed of the film-like adhesive and dried as necessary to form the film-like adhesive on the target site.

The application of the composition for forming an intermediate layer can be performed by the same method as the application of the above-mentioned adhesive composition.

The drying conditions of the composition for forming an intermediate layer are not particularly limited. When the composition for forming an intermediate layer contains the aforementioned solvent, it is preferably heat-dried. In this case, for example, it is preferably dried at 60°C to 130°C for 1 minute to 6 minutes.

○ Film-like adhesive The aforementioned film-like adhesive has curability, preferably has thermosetting properties, and preferably has pressure-sensitive adhesive properties. The film-like adhesive that has both thermosetting and pressure-sensitive adhesive properties can be attached by gently pressing on various adherends in an uncured state. In addition, the film-like adhesive can also be applied to various adherends by being softened by heating. The film adhesive finally becomes a cured product with high impact resistance through curing, and the cured product maintains sufficient adhesive properties even under severe high temperature and high humidity conditions.

When the semiconductor device manufacturing sheet is viewed from above in a plan view, the area of the film adhesive (that is, the area of the first surface) is preferably set to be smaller than the area of the semiconductor wafer before division The area of the substrate (that is, the area of the first side) and the area of the adhesive layer (that is, the area of the first side). In such a sheet for manufacturing a semiconductor device, a part of the first surface of the adhesive layer has a region (that is, the aforementioned non-layered region) that is not in contact with the intermediate layer and the film-like adhesive. Thereby, the expansion of the semiconductor device manufacturing sheet becomes easier, and the force applied to the film-like adhesive during expansion is not dispersed, so that the film-like adhesive can be cut more easily.

The film adhesive can be formed using an adhesive composition containing the constituent material of the film adhesive. For example, by coating the adhesive composition on the surface to be formed of the film-like adhesive, and drying as necessary, the film-like adhesive can be formed on the target site.

The application of the adhesive composition can be performed by the same method as the application of the adhesive composition described above.

The drying conditions of the adhesive composition are not particularly limited. When the adhesive composition contains the solvent described later, it is preferably heat-dried. In this case, for example, it is preferably dried at 70°C to 130°C for 10 seconds to 5 minutes.

The film adhesive may be composed of one layer (single layer) or multiple layers of two or more layers. In the case of being composed of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited.

As explained above, the maximum value of the width of the film adhesive is preferably smaller than the maximum value of the width of the adhesive layer and the maximum value of the width of the substrate. The maximum width of the film adhesive can be for the size of the semiconductor wafer, which is the same as the maximum width of the intermediate layer described above. That is, the maximum width of the film adhesive can be appropriately selected in consideration of the size of the semiconductor wafer. For example, the maximum width of the film adhesive can also be 150 mm to 160 mm, 200 mm to 210 mm, or 300 mm to 310 mm. These three numerical ranges correspond to a semiconductor wafer with a maximum width of 150 mm, a maximum width of 200 mm, or a width relative to the direction parallel to the attaching surface of the semiconductor device manufacturing sheet. A semiconductor wafer with a maximum of 300mm.

In this specification, unless otherwise specified, the "width of the film adhesive" means, for example, the "width of the film adhesive in a direction parallel to the first surface of the film adhesive". For example, in the case of a film-like adhesive whose planar shape is a circular shape, the maximum width of the film-like adhesive becomes the diameter of the circle that is the planar shape. In addition, unless otherwise specified, the "width of the film-like adhesive" means "the width of the film-like adhesive before cutting (uncut) in the manufacturing process of the semiconductor wafer with the film-like adhesive described later" Width", not the width of the film adhesive after cutting.

The maximum width of the film adhesive of 150mm to 160mm means that the maximum width of the semiconductor wafer of 150mm is equal to or less than 10mm. Similarly, the maximum width of the film-like adhesive from 200 mm to 210 mm means that the maximum width of the 200 mm semiconductor wafer is equal to or less than 10 mm. Similarly, the maximum width of the film-like adhesive from 300 mm to 310 mm means that the maximum width of the semiconductor wafer is equal to or less than 10 mm relative to the maximum width of the semiconductor wafer of 300 mm. That is, in this embodiment, no matter which the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm, the difference between the maximum width of the film adhesive and the maximum width of the semiconductor wafer may be For example, 0mm to 10mm.

In this embodiment, the maximum value of the width of the intermediate layer and the maximum value of the width of the film adhesive can be any of the above numerical ranges. That is, as an example of the semiconductor device manufacturing sheet of this embodiment, the maximum value of the width of the intermediate layer and the maximum value of the width of the film adhesive are both 150mm to 160mm, 200mm to 210mm, or 300mm to 310mm.

The thickness of the film adhesive is not particularly limited, and is preferably 1 μm to 30 μm, more preferably 2 μm to 20 μm, and particularly preferably 3 μm to 10 μm. When the thickness of the film-like adhesive is more than the aforementioned lower limit, a higher adhesive force can be obtained with respect to the adherend (semiconductor chip). When the thickness of the film-like adhesive is equal to or less than the aforementioned upper limit, the film-like adhesive can be cut more easily at the time of blade dicing or the aforementioned expansion of the semiconductor device manufacturing sheet. Here, the "thickness of the film adhesive" means the thickness of the entire film adhesive. For example, the thickness of the film adhesive composed of multiple layers means the total thickness of all layers constituting the film adhesive.

It is preferable that the first surface of the intermediate layer and the film-like adhesive have an area equal to or larger than the first surface of the film-like adhesive, and they may have the same shape as each other. The intermediate layer and the film-like adhesive are preferably Laminate so that the outer periphery of the plan view shape becomes uniform.

The following adhesive composition can contain one or more of the following components so that the total content (% by mass) does not exceed 100% by mass, for example. Next, the aforementioned adhesive composition will be described.

[Adhesive composition] As a preferable adhesive composition, for example, it contains a polymer component (a) and a thermosetting component. Hereinafter, each component will be described. In addition, the adhesive composition shown below is a preferable example, and the adhesive composition in this embodiment is not limited to what is shown below.

[Polymer component (a)] The polymer component (a) is regarded as a component formed by the polymerization reaction of a polymerizable compound, and is used to impart film-forming properties or flexibility to the film-like adhesive, and improve adhesion to semiconductor wafers and other bonding objects (In other words, adhesive) polymer compounds. The polymer component (a) has thermoplasticity and does not have thermosetting properties.

The polymer component (a) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types. In the case of two or more types, the combination and ratio of these polymer components (a) Can be chosen arbitrarily.

Examples of the polymer component (a) include acrylic resins, urethane resins, phenoxy resins, silicone resins, saturated polyester resins, and the like. Among these, the polymer component (a) is preferably an acrylic resin.

In the adhesive composition, the ratio of the content of the polymer component (a) to the total content of all components other than the solvent (that is, the content of the polymer component (a) in the film adhesive relative to the film adhesive The ratio of the total mass of the agent) is preferably 20% by mass to 75% by mass, more preferably 30% by mass to 65% by mass.

[Thermosetting component (b)] The thermosetting component (b) is a component having thermosetting properties for thermally curing the film-like adhesive. The thermosetting component (b) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types. In the case of two or more types, the thermosetting component (b) is a combination And the ratio can be chosen arbitrarily.

Examples of the thermosetting component (b) include epoxy-based thermosetting resins, polyimide resins, unsaturated polyester resins, and the like. Among these, the thermosetting component (b) is preferably an epoxy-based thermosetting resin.

〇Epoxy-based thermosetting resin The epoxy-based thermosetting resin is composed of an epoxy resin (b1) and a thermosetting agent (b2). The epoxy-based thermosetting resin contained in the adhesive composition and the film-like adhesive may be only one type or two or more types. In the case of two or more types, the combination of these epoxy-based thermosetting resins And the ratio can be chosen arbitrarily.

・Epoxy resin (b1) As the epoxy resin (b1), known ones can be mentioned, for example, polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrogenated products, o-cresol novolac epoxy resins, diphenyl compounds Cyclopentadiene type epoxy resins, biphenyl type epoxy resins, bisphenol A type epoxy resins, bisphenol F type epoxy resins, phenylene skeleton type epoxy resins and other bifunctional epoxy compounds.

As the epoxy resin (b1), an epoxy resin having an unsaturated hydrocarbon group can also be used. Epoxy resins with unsaturated hydrocarbon groups have higher compatibility with acrylic resins than epoxy resins without unsaturated hydrocarbon groups. Therefore, by using an epoxy resin having an unsaturated hydrocarbon group, the reliability of the package obtained by using the film-like adhesive is improved.

The epoxy resin (b1) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types. In the case of two or more types, the combination and ratio of these epoxy resins (b1) Can be chosen arbitrarily.

・Thermal hardener (b2) The thermosetting agent (b2) functions as a curing agent for the epoxy resin (b1). As the thermosetting agent (b2), for example, a compound having two or more functional groups capable of reacting with epoxy groups in one molecule can be cited. As the aforementioned functional group, for example, phenolic hydroxyl group, alcoholic hydroxyl group, amino group, carboxyl group, acid anhydride group, etc. are mentioned, preferably phenolic hydroxyl group, amino group or acid group anhydride group, more preferably It is a phenolic hydroxyl group or an amino group.

Among the thermosetting agents (b2), examples of phenolic curing agents having phenolic hydroxyl groups include polyfunctional phenol resins, biphenols, novolac type phenol resins, dicyclopentadiene type phenol resins, and aralkyl type phenol resins. Phenolic resin, etc. In the thermosetting agent (b2), examples of the amine curing agent having an amine group include dicyandiamine (DICY) and the like.

The thermosetting agent (b2) may have an unsaturated hydrocarbon group.

The thermosetting agent (b2) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types. In the case of two or more types, the combination and ratio of these thermosetting agents (b2) Can be chosen arbitrarily.

In the adhesive composition and the film-like adhesive, the content of the thermosetting agent (b2) is preferably 0.1 to 500 parts by mass, more preferably 1 part by mass relative to 100 parts by mass of the epoxy resin (b1). Parts to 200 parts by mass, for example, may be any of 1 part by mass to 100 parts by mass, 1 part by mass to 50 parts by mass, and 1 part by mass to 25 parts by mass. When the aforementioned content of the thermosetting agent (b2) is at least the aforementioned lower limit, the film-like adhesive can be cured more easily. When the aforementioned content of the thermosetting agent (b2) is below the aforementioned upper limit, the moisture absorption rate of the film-like adhesive decreases, and the reliability of the package obtained by using the film-like adhesive is further improved.

In the adhesive composition and the film-like adhesive, the content of the thermosetting component (b) relative to 100 parts by mass of the polymer component (a) (for example, epoxy resin (b1) and thermosetting agent (b2) The total content of) is preferably 5 parts by mass to 100 parts by mass, more preferably 5 parts by mass to 75 parts by mass, particularly preferably 5 parts by mass to 50 parts by mass, for example, 5 parts by mass to 35 parts by mass and 5 parts by mass Any one of parts by mass to 20 parts by mass. When the aforementioned content of the thermosetting component (b) is in this range, the peeling force between the intermediate layer and the film-like adhesive becomes more stable.

Adhesive compositions and film adhesives can also be used to improve various physical properties of the film adhesives. In addition to polymer components (a) and thermosetting components (b), they may also contain other components that are not equivalent to these components if necessary. Element. Preferred examples of other components contained in the adhesive composition and the film-like adhesive include hardening accelerator (c), filler (d), coupling agent (e), crosslinking agent (f), Energy ray curable resin (g), photopolymerization initiator (h), general additives (i), etc.

[Hardening accelerator (c)] The hardening accelerator (c) is a component used to adjust the hardening speed of the adhesive composition. As a preferable hardening accelerator (c), for example, three grades such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris(dimethylaminomethyl)phenol, etc. Amine; 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl- Imidazoles such as 5-hydroxymethylimidazole (imidazoles in which more than one hydrogen atom is substituted by a group other than hydrogen atoms); organic phosphines such as tributylphosphine, diphenylphosphine, and triphenylphosphine (one The above hydrogen atoms are substituted with organic groups phosphines); tetraphenyl borate such as tetraphenyl phosphonium tetraphenyl borate, triphenyl phosphine tetraphenyl borate, etc.

The hardening accelerator (c) contained in the adhesive composition and the film-like adhesive may be one type or two or more types. In the case of two or more types, the combination and ratio of these hardening accelerators (c) Can be chosen arbitrarily.

In the case of using the hardening accelerator (c), in the adhesive composition and the film-like adhesive, the content of the hardening accelerator (c) is preferably 100 parts by mass relative to the content of the thermosetting component (b) 0.01 parts by mass to 10 parts by mass, more preferably 0.1 parts by mass to 5 parts by mass. When the aforementioned content of the hardening accelerator (c) is more than the aforementioned lower limit, the effect obtained by using the hardening accelerator (c) can be more remarkably obtained. Since the content of the hardening accelerator (c) is below the aforementioned upper limit, for example, the hardening accelerator (c) of high polarity is inhibited in the film-like adhesive under the conditions of high temperature and high humidity to transfer the film-like adhesive and the adherend The adhesion interface side moves and the effect of segregation becomes higher, and the reliability of the package obtained by using the film-like adhesive is further improved.

[Filling material (d)] By containing the filler (d) in the film-like adhesive, the spreading and cutting properties are further improved. In addition, by containing the filler (d), the film-like adhesive makes it easy to adjust the thermal expansion coefficient, and the thermal expansion coefficient is optimized by the object to be attached to the film-like adhesive, and the package obtained by using the film-like adhesive The reliability is further improved. In addition, when the film adhesive contains the filler (d), the moisture absorption rate of the film adhesive after curing can also be reduced, or the heat dissipation can be improved.

The filler (d) may be any one of an organic filler and an inorganic filler, and an inorganic filler is preferred. Preferred inorganic fillers include, for example, powders of silica, alumina, talc, calcium carbonate, titanium dioxide, iron oxide, silicon carbide, boron nitride, etc.; these inorganic fillers are made by spheroidizing. Beads; surface modification products of these inorganic fillers; single crystal fibers of these inorganic fillers; glass fibers, etc. Among these, the inorganic filler is preferably silica or alumina.

The filler (d) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types. In the case of two or more types, the combination and ratio of these fillers (d) may be arbitrary choose.

When the filler (d) is used, in the adhesive composition, the ratio of the content of the filler (d) to the total content of all components other than the solvent (that is, the filler in the film adhesive ( The ratio of the content of d) to the total mass of the film-like adhesive) is preferably 5 mass% to 80 mass%, more preferably 10 mass% to 70 mass%, and particularly preferably 20 mass% to 60 mass%. When the aforementioned ratio is in such a range, the effect obtained by using the aforementioned filler (d) can be more remarkably obtained.

[Coupling agent (e)] By containing the coupling agent (e), the film-like adhesive improves the adhesion and adhesion to the adherend. In addition, when the film adhesive contains the coupling agent (e), the cured product of the film adhesive improves water resistance without impairing heat resistance. The coupling agent (e) has a functional group capable of reacting with an inorganic compound or an organic compound.

The coupling agent (e) is preferably a compound having a functional group capable of reacting with the functional group possessed by the polymer component (a) and the thermosetting component (b), and more preferably a silane coupling agent.

The coupling agent (e) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types. In the case of two or more types, the combination and ratio of these coupling agents (e) may be arbitrary choose.

When the coupling agent (e) is used, in the adhesive composition and the film-like adhesive, relative to 100 parts by mass of the total content of the polymer component (a) and the thermosetting component (b), the coupling agent (e) The content of) is preferably 0.03 parts by mass to 20 parts by mass, more preferably 0.05 parts by mass to 10 parts by mass, and particularly preferably 0.1 parts by mass to 5 parts by mass. When the aforementioned content of the coupling agent (e) is above the aforementioned lower limit, the dispersibility of the filler (d) in the resin can be improved, or the adhesion between the film-like adhesive and the adherend can be improved, etc. The effect obtained by using the coupling agent (e). When the aforementioned content of the coupling agent (e) is below the aforementioned upper limit, the generation of outgassing can be further suppressed.

[Crosslinker (f)] When using the above-mentioned acrylic resin and the like having functional groups such as vinyl groups, (meth)acrylic groups, amino groups, hydroxyl groups, carboxyl groups, and isocyanate groups that can be bonded to other compounds as the polymer component (a), then The agent composition and the film-like adhesive may also contain a crosslinking agent (f). The cross-linking agent (f) is a component used to bond the aforementioned functional groups in the polymer component (a) with other compounds to be cross-linked. By such cross-linking, the initial adhesive force of the film-like adhesive can be adjusted And cohesion.

Examples of the crosslinking agent (f) include organic polyisocyanate compounds, organic polyimine compounds, metal chelate crosslinking agents (crosslinking agents having a metal chelate structure), and aziridine crosslinking Agent (crosslinking agent with aziridinyl group) and the like.

When an organic polyvalent isocyanate compound is used as the crosslinking agent (f), it is preferable to use a hydroxyl group-containing polymer as the polymer component (a). When the crosslinking agent (f) has an isocyanate group and the polymer component (a) has a hydroxyl group, the reaction between the crosslinking agent (f) and the polymer component (a) can be easily applied to the film adhesive Import the cross-linked structure.

The cross-linking agent (f) contained in the adhesive composition and the film-like adhesive may be only one type, or two or more types. In the case of two or more types, the combination and ratio of these cross-linking agents (f) Can be chosen arbitrarily.

When the crosslinking agent (f) is used, in the adhesive composition, the content of the crosslinking agent (f) is preferably 0.01 to 20 parts by mass relative to 100 parts by mass of the polymer component (a) Parts, more preferably 0.1 parts by mass to 10 parts by mass, particularly preferably 0.3 parts by mass to 5 parts by mass. When the aforementioned content of the cross-linking agent (f) is more than the aforementioned lower limit, the effect obtained by using the cross-linking agent (f) can be obtained more remarkably. When the aforementioned content of the cross-linking agent (f) is below the aforementioned upper limit, excessive use of the cross-linking agent (f) is suppressed.

[Energy ray curable resin (g)] Since the adhesive composition and the film-like adhesive contain the energy-ray curable resin (g), the film-like adhesive can change its characteristics by irradiation with energy rays.

The energy ray curable resin (g) is obtained from an energy ray curable compound. As the aforementioned energy ray curable compound, for example, a compound having at least one polymerizable double bond in the molecule is exemplified, and an acrylate-based compound having a (meth)acryloyl group is preferred.

The energy ray curable resin (g) contained in the adhesive composition may be only one type or two or more types. In the case of two or more types, the combination and ratio of these energy ray curable resins (g) may be Free to choose.

In the case of using energy ray curable resin (g), in the adhesive composition, the ratio of the content of the energy ray curable resin (g) to the total mass of the adhesive composition is preferably 1% by mass to 95% % By mass, more preferably 5% by mass to 90% by mass, particularly preferably 10% by mass to 85% by mass.

[Photopolymerization initiator (h)] When the adhesive composition and the film-like adhesive contain the energy ray curable resin (g), in order to efficiently perform the polymerization reaction of the energy ray curable resin (g), It may contain a photopolymerization initiator (h).

The photopolymerization initiator (h) in the adhesive composition includes, for example, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin Dimethyl ketal and other benzoin compounds; acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, 2,2-dimethoxy-1,2-diphenyl Acetophenone compounds such as ethane-1-one; bis(2,4,6-trimethylbenzyl) phenyl phosphine oxide, 2,4,6-trimethylbenzyl diphenyl Phosphine oxide and other phosphinic oxide compounds; sulfide compounds such as benzyl phenyl sulfide and tetramethylthiuram monosulfide; α-keto alcohol compounds such as 1-hydroxycyclohexyl phenyl ketone; azobisiso Azo compounds such as butyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; Ketone; 2,4-Diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]acetone; 1 -Quinone compounds such as chloroanthraquinone and 2-chloroanthraquinone. In addition, as the photopolymerization initiator (h), for example, photosensitizers such as amines can also be cited.

The photopolymerization initiator (h) contained in the adhesive composition may be only one type or two or more types. In the case of two or more types, the combination and ratio of these photopolymerization initiators (h) may be Free to choose.

In the case of using the photopolymerization initiator (h), in the adhesive composition, the content of the photopolymerization initiator (h) is preferably 100 parts by mass relative to the content of the energy ray curable resin (g) 0.1 parts by mass to 20 parts by mass, more preferably 1 parts by mass to 10 parts by mass, particularly preferably 2 parts by mass to 5 parts by mass.

[General-purpose additives (i)] The general-purpose additives (i) may also be known ones, and can be arbitrarily selected according to the purpose, and are not particularly limited. Preferred ones include, for example, plasticizers, antistatic agents, antioxidants, Colorants (dyes, pigments), getters, etc.

The general additives (i) contained in the adhesive composition and the film adhesive may be one type or two or more types. In the case of two or more types, the combination and ratio of these universal additives (i) can be arbitrary choose. The content of the adhesive composition and the film-like adhesive is not particularly limited, as long as it is appropriately selected according to the purpose.

[Solvent] The adhesive composition preferably further contains a solvent. The operability of the adhesive composition system containing the solvent becomes better. The aforementioned solvent is not particularly limited. Preferred examples include hydrocarbons such as toluene and xylene; methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), 1-butanol, etc. Alcohols such as alcohols; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides such as dimethylformamide and N-methylpyrrolidone (compounds with amide bonds), etc. . The adhesive composition may contain only one solvent or two or more solvents. In the case of two or more solvents, the combination and ratio of these solvents can be arbitrarily selected.

The solvent contained in the adhesive composition is preferably methyl ethyl ketone or the like from the viewpoint that the components contained in the adhesive composition can be mixed more uniformly.

The content of the solvent in the adhering agent composition is not particularly limited, and may be appropriately selected according to the types of components other than the solvent, for example.

[Method for Manufacturing Adhesive Composition] The adhesive composition is obtained by blending the components that constitute the adhesive composition. For example, the adhesive composition can be manufactured by the same method as the adhesive composition described above, except for the different types of ingredients.

〇Release film The constituent material of the release film is preferably various resins, and examples of the above-mentioned base materials are exemplified, and polyethylene terephthalate (PET) is preferable.

The thickness of the release film can be appropriately selected according to the target, and can be 10 μm or more and 200 μm or less, 20 μm or more and 150 μm or less, and 30 μm or more and 80 μm or less.

Here, the "thickness of the release film" means the thickness of the entire release film. For example, the thickness of the release film composed of multiple layers means the total thickness of all layers constituting the release film.

The release film may contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, and softeners (plasticizers) in addition to the main constituent materials such as the aforementioned resins.

The bonding surface of the release film with respect to the film-like adhesive is preferably a release treatment surface treated with a release agent. The said peeling process surface may contain a peeling agent. Examples of the release agent include alkyd-based, silicone-based, fluorine-based, unsaturated polyester-based, polyolefin-based, wax-based, etc., and silicone-based release agents containing silicone are preferred.

In order to perform the peeling treatment using the above-mentioned release agent, the following methods can be cited: the release agent is kept in a solvent-free state or diluted with a solvent or made into an emulsion, using a gravure coater, a Meyer bar coater, or an air knife coater , Roll coater, etc. for coating, supply the film coated with the release agent at room temperature or under heating, or harden by electron beam, or by wet or dry lamination, hot melt lamination, Melt extrusion lamination, co-extrusion processing, etc. form a laminate.

The peeling film 15 described in the sheet 101 for manufacturing a semiconductor device can be reinterpreted as the second peeling film 15 in the method of manufacturing a sheet for manufacturing a semiconductor device of the embodiment described later.

◇Method for manufacturing semiconductor device manufacturing sheet The aforementioned semiconductor device manufacturing sheet can be manufactured by stacking the above-mentioned layers so as to have a corresponding positional relationship. The formation method of each layer is as described above.

For example, the aforementioned semiconductor device manufacturing sheet can be manufactured by preparing a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive, respectively, and using these to form the substrate, adhesive layer, intermediate layer, and film. Adhesives are laminated in a sequential manner. However, this method is an example of a method of manufacturing a sheet for manufacturing a semiconductor device.

The aforementioned semiconductor device manufacturing sheet may also be manufactured, for example, by pre-preparing two or more intermediate laminates composed of a plurality of laminated layers to form the semiconductor device manufacturing sheet, and combining these intermediate laminates with each other To fit together. The structure of the intermediate laminate can be appropriately selected arbitrarily. For example, by pre-fabricating a first intermediate layered body (corresponding to the aforementioned support sheet) having a structure of laminating a base material and an adhesive, and a second intermediate layered body having a structure of layering an intermediate layer and a film-like adhesive , And the adhesive layer in the first intermediate laminate and the intermediate layer in the second intermediate laminate are bonded together to produce a sheet for manufacturing semiconductor devices. However, this is also an example of a method of manufacturing a sheet for manufacturing a semiconductor device.

As the aforementioned semiconductor device manufacturing sheet, for example, the area of the first surface of the intermediate layer and the area of the first surface of the film adhesive as shown in FIG. 1 are both smaller than the first surface of the adhesive layer and the second surface of the substrate In the case of the area of one side, it is also possible to add a step of processing the intermediate layer and the film-like adhesive to the target size in any stage of the above-mentioned manufacturing method. For example, in the manufacturing method using the aforementioned second intermediate laminate, a step of processing the intermediate layer and the film-like adhesive in the second intermediate laminate to a target size may be additionally performed, thereby manufacturing a semiconductor device manufacturing sheet.

As the aforementioned semiconductor device manufacturing sheet, for example, when the area of the first surface of the base material and the area of the first surface of the adhesive layer are smaller than the area of the first surface of the release film as shown in FIG. 1, for example, It is also possible to add a step of processing the base material and the adhesive layer to a target size in any stage of the above-mentioned manufacturing method.

When manufacturing a semiconductor device manufacturing sheet with a release film on the film adhesive, for example, a film adhesive can be prepared on the release film, and the remaining layers can be laminated while maintaining this state to produce a semiconductor device manufacturing sheet ; After the substrate, adhesive layer, intermediate layer and film adhesive are all laminated, a release film can be laminated on the film adhesive to produce a semiconductor device manufacturing sheet. The release film only needs to be removed in a necessary stage before using the semiconductor device manufacturing sheet.

A sheet for manufacturing a semiconductor device that includes a substrate, an adhesive layer, an intermediate layer, a film-like adhesive, and other layers other than the release film can be manufactured by the following method: In the above-mentioned manufacturing method, additional processing is performed at an appropriate time to form the Steps to build up other layers.

Each layer of the sheet for manufacturing a semiconductor device can be processed by pressing, for example, to be formed into any shape. For example, in the case where the intermediate layer 13 and the film-like adhesive 14 are circular, a punching knife of the corresponding shape can be used for punching into a circular shape.

As a method of manufacturing a sheet for manufacturing a semiconductor device according to an embodiment of the present invention, the following can be exemplified. A method for manufacturing a sheet for manufacturing a semiconductor device, the sheet for manufacturing the semiconductor device is provided with a substrate, an adhesive layer, an intermediate layer, a film-like adhesive, and a second release film, and the substrate and the adhesive are sequentially laminated Layer, the intermediate layer, the film-like adhesive, and the second release film, and the method for manufacturing the semiconductor device manufacturing sheet includes: a first processing step including the intermediate layer, the film-like adhesive, and The intermediate layer and the film-like adhesive in the second intermediate laminate of the first release film are formed with cut-in portions C at positions corresponding to the outer periphery of the intermediate layer and the film-like adhesive of the semiconductor device manufacturing sheet to The cut portion C is the starting point to remove at least a part of the intermediate layer and the film-like adhesive located on the outer side to obtain a second intermediate laminated body processed product; the lamination step includes the first intermediate layer with the substrate and the adhesive layer The laminated body is bonded to the second intermediate laminated body processed article to obtain a first laminated article including the substrate, the adhesive layer, the intermediate layer, the film-like adhesive, and the first release film; Step, peel off the first release film of the first laminate, and reattach it to the second release film to obtain a second laminate; and a second processing step for the substrate and the adhesive of the second laminate The agent layer is formed with a cut portion C'at a position corresponding to the outer periphery of the base material and the adhesive layer of the sheet for manufacturing a semiconductor device, and the base material and the adhesive layer on the outside are formed from the cut portion C'as a starting point At least a part of is removed to obtain a sheet for manufacturing a semiconductor device; and the peeling force between the first release film and the film-like adhesive is greater than the peeling force between the second release film and the film-like adhesive.

According to the manufacturing method of the semiconductor device manufacturing sheet of the embodiment, the semiconductor device manufacturing sheet of the above-mentioned embodiment can be manufactured.

3 is a cross-sectional view schematically showing a method of manufacturing a sheet for manufacturing a semiconductor device according to an embodiment of the invention. In addition, the sheet for manufacturing a semiconductor device shown in FIG. 3 is the sheet for manufacturing a semiconductor device shown in FIG. 1 upside down.

[First processing step] The second intermediate laminate 102 shown in FIG. 3A is provided with a film adhesive 14 and an intermediate layer 13, and has a first release film 17, a film adhesive 14, an intermediate layer 13, and a third release film 16 laminated in this order The composition. The third release film 16, the intermediate layer 13, and the film-like adhesive 14 of the second intermediate laminate 102 are applied to the intermediate layer 13 of the semiconductor device manufacturing sheet 101 from the side on which the third release film 16 is laminated. The position corresponding to the outer periphery of the film-like adhesive 14 forms the first punch of the cut portion C. During the punching, a person can be cut up to the first release film 17, and the cut portion C can be formed in the first release film 17. Then, at least a part of the intermediate layer and the film-like adhesive located on the outer side is removed from the cut portion C as a starting point to obtain a second intermediate laminated body processed product 103 (FIG. 3B ). The "outer side" here refers to a position on the outside of the area surrounded by the cut portion C in a direction parallel to the surface of the film-like adhesive.

[Laminating Step] The third release film 16 is removed from the second intermediate laminated body processed product 103 obtained as described above, so that one side of the intermediate layer 13 is exposed. In addition, the release film (not shown) is removed from the first intermediate laminate with release film provided with the substrate 11 and the adhesive layer 12 provided on one side of the substrate 11, so that one side of the adhesive layer 12 is exposed . Then, a lamination step is performed in which the exposed surface of the adhesive layer 12 of the first intermediate laminate 104 and the exposed surface of the intermediate layer 13 of the second intermediate laminate processed product 103 are bonded together. The first intermediate laminated body 104 is laminated so as to cover the intermediate layer 13 and the film-like adhesive 14 of the second intermediate laminated body processed object 103. In this way, the first laminate 105 including the first release film 17, the film-like adhesive 14, the intermediate layer 13, the adhesive layer 12, and the base material 11 is obtained (FIG. 3C).

[Repost steps] The first release film 17 of the first layered product 105 obtained above is peeled off, and it is reattached to the second release film 15 to obtain a second layered product 107. The second laminate 107 has a structure in which the second release film 15, the film-like adhesive 14, the intermediate layer 13, the adhesive layer 12, and the base material 11 are laminated in this order (FIG. 3D).

The newly attached second release film 15 does not have a cut-in portion C along the outer periphery of the intermediate layer 13 and the film-like adhesive 14.

[Second processing step] The substrate 11 and the adhesive layer 12 of the second layered product 107 obtained above are applied to the outer periphery of the substrate 11 and the adhesive layer 12 of the semiconductor device manufacturing sheet 101 from the side on which the substrate 11 is laminated. The corresponding position forms the second punch of the cut-in portion C'. Here, the cut-in portion C'of the punched part and the cut-in portion C are arranged concentrically on the outer side of the cut-in portion C. During the punching, the person can be cut to the second release film 15, and the cut portion C'can be formed in the second release film 15. Then, by removing at least a part of the base material 11 and the adhesive layer 12 located on the outside from the cut portion C'as a starting point, a sheet 101 for manufacturing a semiconductor device is obtained (FIG. 3E ). The "outer side" here refers to a position on the outside of the area surrounded by the cut portion C'in a direction parallel to the surface of the film-like adhesive.

By performing the cutting at the position of the cutting portion C', the maximum value (that is, the diameter) _{of the width W 13} of the intermediate layer 13 of the semiconductor device manufacturing sheet 101 and the width W 14 of the _{film-like adhesive 14 can be} The maximum value (that is, the diameter) is less than the maximum value of the width of the adhesive layer 12 and the maximum value of the width of the substrate 11.

The manufacturing method of the semiconductor device manufacturing sheet of the embodiment may further include, before the first processing step, the second intermediate laminate manufacturing step, applying an adhesive composition to the peeling-treated surface of the first peeling film, and drying it. A film-like adhesive is formed, the composition for forming an intermediate layer is applied to the release-treated surface of the release film, dried to form an intermediate layer, and the exposed surface of the film-like adhesive and the exposed surface of the intermediate layer are bonded together, and This obtains a second intermediate laminate having a first release film.

The method of manufacturing a sheet for manufacturing a semiconductor device of the embodiment may further include the step of manufacturing a first intermediate layered body, applying an adhesive composition to the peeling surface of the peeling film, and drying to form an adhesive layer , Bonding the exposed surface of the aforementioned adhesive layer to the base material, thereby obtaining a first intermediate laminate.

In the method of manufacturing a sheet for manufacturing a semiconductor device of the embodiment, the peeling force between the first release film and the film-like adhesive is higher than the peeling force between the second release film and the film-like adhesive. That is, in the reattaching step, the first release film is reattached to the second release film 15 with a lower peeling force. By making the aforementioned peeling force of the first peeling film higher than the aforementioned peeling force of the second peeling film, the film-forming properties of the film-like adhesive become better when the layer of the film-like adhesive is formed. Generally speaking, in order to reduce the peeling force between adherends and make peeling easier, the peeling film is subjected to a peeling treatment with a peeling treatment agent. However, according to research conducted by the inventors, it has been found that if the above-mentioned adhesive composition is applied to a release film with low peeling force to form a film-like adhesive, the film-like adhesive may have poor film-forming properties. It is believed that the reason is that the release film with low peeling force is also prone to shrinkage of the adhesive composition. Therefore, by using the first release film with high peeling force when producing the film adhesive, a uniform film adhesive layer can be easily formed.

As the reattachment step, reattaching the release film of the first laminate 105 has the following advantages: in the first laminate 105, the first intermediate laminate 104 is laminated so as to cover the second intermediate laminate processed object 103, Therefore, the layer structure of the first layered product 105 is not easy to be damaged during the reposting.

On the other hand, while maintaining the state of the sheet for manufacturing a semiconductor device provided with the first release film with high release force, it may be difficult to release the first release film from the film-like adhesive during use. For example, in the mounting process in which the release film is peeled off and the film-like adhesive and the semiconductor wafer are bonded together, there may be a problem that the sheet for semiconductor manufacturing is not smoothly supplied. The peeling of the peeling film here is usually carried out automatically, so it can be considered that it is difficult to adjust the conditions for peeling the peeling film (the peeling angle or peeling speed in the placement machine) in the device used for the placement process, and it is easy to cause defects . Therefore, in the above-mentioned reattachment step, the first release film is peeled off and reattached to the second release film 15 with a lower release force, thereby providing a semiconductor device manufacturing device with a second release film with a lower release force. piece. When the semiconductor manufacturing sheet manufactured through the reattachment step is used in the semiconductor device manufacturing sheet, the mounting process suitability is excellent.

As an index of the peeling force of the first peeling film and the second peeling film, the peeling force with respect to the adhesive layer obtained by the following peeling test can be used.

[Peel test] The adhesive composition was applied to the peeling treatment surface of the first release film and dried to form a single-layer adhesive layer with a thickness of 10 μm to obtain a first test piece. 100 parts by mass of acrylic resin ("Oribain BPS 6367X" manufactured by Toyo-Chem) and 1 part by mass of crosslinking agent ("BXX 5640" manufactured by Toyo-Chem); Regarding the first test piece, under the conditions of a peeling speed of 1000mm/min, 23°C, and a humidity of 50%RH, the peeling surface of the adhesive layer of the first test piece and the peeling surface of the first peeling film are at 180° to each other. In terms of angle, 180° peeling of the first peeling film from the adhesive layer was performed, and the peeling force (mN/50mm) between the adhesive layer and the first peeling film measured by this was determined. The peeling force between the adhesive layer and the first peeling film in the first test piece is preferably more than 180mN/50mm, more preferably more than 180mN/50mm to 300mN/50mm or less, more preferably 200mN/50mm or more to 280mN/50mm or less, more preferably 230mN/50mm or more to 270mN/50mm or less. When the peeling force of the first peeling film in the first test piece exceeds the lower limit or is greater than the lower limit, the quality of the film-like adhesive layer formed on the first peeling film can be further improved. Since the peeling force of the first peeling film in the first test piece is below the upper limit, it is easy to reattach the first peeling film in the reattaching step.

The adhesive composition was applied to the peeling treatment surface of the second release film and dried to form a single-layer adhesive layer with a thickness of 10 μm to obtain a second test piece. It is composed of 100 parts by mass of acrylic resin ("Oribain BPS 6367X" manufactured by Toyo-Chem) and 1 part by mass of crosslinking agent ("BXX 5640" manufactured by Toyo-Chem), Regarding the second test piece, under the conditions of a peeling speed of 1000mm/min, 23°C, and a humidity of 50%RH, the peeling surface of the adhesive layer of the second test piece and the peeling surface of the second peeling film are at 180° to each other. In terms of angle, 180° peeling of the second peeling film from the adhesive layer was performed, and the peeling force between the adhesive layer and the second peeling film measured by this was determined. The peeling force between the adhesive layer and the second peeling film in the second test piece is preferably 180mN/50mm or less, preferably 100mN/50mm or more and 180mN/50mm or less, more preferably 120mN/50mm or more to 170mN/50mm or less, more preferably 130mN/50mm or more and 160mN/50mm or less. Since the peeling force of the second peeling film in the second test piece is equal to or higher than the lower limit, accidental peeling of the second peeling film is prevented. Since the peeling force of the first release film in the first test piece is below the above upper limit value, a semiconductor manufacturing sheet with further improved mounting process suitability is obtained.

The length of the aforementioned test piece supplied for the measurement is not particularly limited as long as it is a range that can stably measure the peeling force, and is preferably 100 mm to 300 mm.

The peeling force between the first peeling film and the film-like adhesive and the peeling force between the second peeling film and the film-like adhesive can also be measured by the same method as the peeling test described above. In the above-mentioned peeling test, the adhesive composition of the test piece is changed to an adhesive composition, and the adhesive layer is changed to a film-like adhesive to obtain the peeling force between the peeling film and the film-like adhesive.

As the first release film and the second release film, the configuration exemplified in the description of the release film of the foregoing embodiment can be adopted, and detailed descriptions of the configuration and constituent materials are omitted here. A commercially available release film can be used for the first release film and the second release film, and a release film having a required release force can be appropriately used. In addition, by appropriately adjusting the type and content (such as silicone content) of the release agent on the release treatment surface, the first release film and the second release film with the required release force can be manufactured.

According to the method of manufacturing a sheet for manufacturing a semiconductor device of the embodiment, it is possible to provide a sheet for manufacturing a semiconductor device having a high-quality film-like adhesive and excellent in mounting process suitability.

◇How to use the sheet for manufacturing semiconductor devices (manufacturing method of semiconductor wafer with film-like adhesive) The aforementioned sheet for manufacturing a semiconductor device can be used in the manufacturing process of the semiconductor device when manufacturing a semiconductor wafer with a film-like adhesive. As an embodiment of the present invention, a method for manufacturing a semiconductor wafer with a film-like adhesive provides a method for manufacturing a semiconductor wafer with a film-like adhesive having the following steps: in the foregoing of the semiconductor device manufacturing sheet of the embodiment The step of laminating semiconductor wafers or semiconductor wafers on the side of the film adhesive to obtain a laminate; and cutting the film adhesive, or the semiconductor wafer and the film adhesive along the outer periphery of the semiconductor wafer, The step of obtaining a semiconductor wafer with a film-like adhesive.

Hereinafter, while referring to the drawings, a method of using the aforementioned sheet for manufacturing a semiconductor device (a method of manufacturing a semiconductor wafer with a film-like adhesive) will be described in detail.

The method of manufacturing a semiconductor wafer with a film-like adhesive of the embodiment includes the steps of attaching the inner surface of the semiconductor wafer to the exposed surface of the film-like adhesive of the semiconductor device manufacturing sheet to obtain the substrate and the The step of stacking the adhesive layer, the intermediate layer, the film-like adhesive, and the semiconductor wafer in order; dividing the semiconductor wafer, and cutting the film-like adhesive to obtain a film-like The step of bonding the semiconductor chip with the adhesive; and the step of separating and picking up the semiconductor chip with the film-like bonding agent from the substrate, the adhesive layer and the intermediate layer.

4 is a cross-sectional view for schematically explaining an example of the method of using the sheet for manufacturing a semiconductor device, showing a situation in which the sheet for manufacturing a semiconductor device is attached to a semiconductor wafer and used. In this method, a semiconductor device manufacturing sheet is used as a dicing die. Here, the semiconductor device manufacturing sheet 101 shown in FIG. 1 is taken as an example, and the method of use will be described.

First, as shown in FIG. 4A, while heating the semiconductor device manufacturing sheet 101 with the release film 15 removed, the film-like adhesive 14 in the semiconductor device manufacturing sheet 101 is attached to the semiconductor wafer 9'的内面 9b'. Symbol 9a' denotes the circuit formation surface of the semiconductor wafer 9'.

The heating temperature at the time of attaching the sheet 101 for manufacturing a semiconductor device is not particularly limited, but in terms of further improving the stability of heating attaching the sheet 101 for manufacturing a semiconductor device, it is preferably 40°C to 70°C.

_{The maximum value of the width W 13} of the intermediate layer 13 and the maximum value of the width W ₁₄ of the film adhesive 14 in the semiconductor device manufacturing sheet 101 are exactly the same as the maximum value of the width W _{9 ′ of the semiconductor wafer 9 ′, or} Although they are not the same, the error is slight and basically the same.

Then, the laminated product of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9'obtained above is cut with a blade from the circuit formation surface 9a' side of the semiconductor wafer 9'(blade dicing), thereby dividing the semiconductor wafer 9'and cut off the film adhesive 14.

The blade cutting can be performed by a known method. For example, the area near the periphery of the adhesive layer 12 of the adhesive layer 12 in the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film-like adhesive 14 are not laminated (the aforementioned non-laminated area) can be fixed to the ring frame After waiting for the jig (not shown), the semiconductor wafer 9'is divided and the film adhesive 14 is cut using a blade.

Through this step, as shown in FIG. 4B, a plurality of semiconductor chips 914 with a film-like adhesive can be obtained. The semiconductor chip 914 with a film-like adhesive includes a semiconductor chip 9 and is arranged on the inner surface of the semiconductor chip 9 9b Film-like adhesive 140 after cutting. These semiconductor wafers 914 with a film-like adhesive are in a state of being neatly arranged and fixed on the intermediate layer 13 of the laminated sheet 10, forming a group of semiconductor wafers 910 with a film-like adhesive. The inner surface 9b of the semiconductor wafer 9 corresponds to the inner surface 9b' of the semiconductor wafer 9'. In addition, in FIG. 4, reference numeral 9a denotes the circuit formation surface of the semiconductor wafer 9 and corresponds to the circuit formation surface 9a' of the semiconductor wafer 9'.

When cutting with a blade, it is preferable to use a blade to divide the semiconductor wafer 9'by cutting into the entire thickness direction, and for the semiconductor device manufacturing sheet 101, it is cut from the first surface 14a of the film-like adhesive 14 to As far as the midway region of the intermediate layer 13 is reached, the film-like adhesive 14 is cut in the entire thickness direction by this, and the adhesive layer 12 is not cut. That is, when cutting with a blade, it is preferable to use a blade. For the laminate of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9', at least cut into the circuit formation surface 9a' of the semiconductor wafer 9'in the layering direction Up to the first surface 13a of the intermediate layer 13 and not cut to the surface of the intermediate layer 13 opposite to the first surface 13a (that is, the contact surface with the adhesive layer 12).

In this step, it is possible to prevent the blade from reaching the base material 11 so easily, thereby suppressing the generation of cutting chips from the base material 11. In addition, the main component of the intermediate layer 13 cut by the blade is a non-silicon resin having a weight average molecular weight of 100,000 or less, especially a weight average molecular weight of 100,000 or less, thereby also suppressing the generation of cutting chips from the intermediate layer 13.

The conditions for blade cutting are not particularly limited as long as they are appropriately adjusted according to the purpose. Generally, the rotation speed of the blade is preferably 15000 rpm to 50000 rpm, and the moving speed of the blade is preferably 5 mm/sec to 75 mm/sec.

After the blade is diced, as shown in FIG. 4C, the semiconductor wafer 914 with the film-like adhesive is pulled away from the intermediate layer 13 in the laminated sheet 10 and picked up. Here, it is shown that the semiconductor wafer 914 with the film-like adhesive is pulled away in the direction of the arrow P using the pull-off mechanism 7 such as a vacuum chuck. Furthermore, the section of the pull-off mechanism 7 is shown here. The semiconductor chip 914 with the film-like adhesive can be picked up by a known method.

On the first surface 13a of the intermediate layer 13, when the aforementioned silicon concentration ratio is 1% to 20%, the semiconductor wafer 914 with the film-like adhesive can be picked up more easily. The intermediate layer 13 contains, for example, an ethylene-vinyl acetate copolymer as the aforementioned non-silicon resin and a silicone compound as the aforementioned additive. The content of the ethylene-vinyl acetate copolymer in the intermediate layer is relative to that of the intermediate layer. When the ratio of the total mass is 90% to 99.99% by mass, and the ratio of the content of the aforementioned silicone compound in the intermediate layer to the total mass of the intermediate layer is 0.01% to 10% by mass, it can be easier Groundly pick up the semiconductor wafer 914 with the film-like adhesive.

Among the methods of manufacturing a semiconductor wafer with a film-like adhesive described so far, as a preferred embodiment, for example, the following method for manufacturing a semiconductor wafer with a film-like adhesive can be cited. The semiconductor wafer includes a semiconductor wafer and a film adhesive provided on the inner surface of the semiconductor wafer, and the semiconductor device manufacturing sheet includes the substrate, an adhesive layer, an intermediate layer, and a film adhesive; the manufacturing method has The following steps: a step of attaching the film adhesive in the semiconductor device manufacturing sheet to the inner surface of the semiconductor wafer while heating the semiconductor device manufacturing sheet; attaching the film adhesive The semiconductor wafer is cut into the entire thickness direction from the circuit formation surface side to be divided to produce a semiconductor wafer, and the semiconductor device manufacturing sheet is cut in the thickness direction from the film adhesive side to the middle of the intermediate layer Cut the film-like adhesive without cutting into the adhesive layer up to the region, thereby obtaining a film-like adhesive in a state where a plurality of semiconductor wafers with the film-like adhesive are arranged neatly on the intermediate layer The step of the semiconductor wafer group; and the step of pulling the semiconductor wafer with the film-like adhesive from the intermediate layer and picking it up (in this specification, sometimes referred to as "manufacturing method 1").

A method of manufacturing a semiconductor wafer with a film-like adhesive according to another embodiment includes the steps of: attaching a plurality of semiconductors in a state in which the semiconductor wafers are neatly arranged on the exposed surface of the film-like adhesive of a sheet for manufacturing a semiconductor device On the inner surface of the wafer group, a step of obtaining a laminate composed of the substrate, the adhesive layer, the intermediate layer, the film adhesive, and the semiconductor wafer group in order; cutting the film adhesive, A step of obtaining a semiconductor chip with a film-like adhesive; and a step of pulling off the semiconductor chip with a film-like adhesive from the substrate, the adhesive layer and the intermediate layer and picking it up.

Fig. 5 is a cross-sectional view schematically illustrating an example of a method of manufacturing a semiconductor wafer used as a semiconductor device manufacturing sheet, showing that a semiconductor is manufactured by dicing accompanying the formation of a modified layer in the semiconductor wafer The situation of the chip. FIG. 6 is a cross-sectional view schematically illustrating another example of the method of using the semiconductor device manufacturing sheet, showing a situation in which the semiconductor device manufacturing sheet is attached to a semiconductor wafer and used. In this method, a sheet for manufacturing a semiconductor device is used as a bonding wafer. Here, taking the sheet 101 for manufacturing a semiconductor device shown in FIG. 1 as an example, a method of using the sheet 101 for manufacturing a semiconductor device will be described.

First, before using the semiconductor device manufacturing sheet 101, as shown in FIG. 5A, a semiconductor wafer 9'is prepared, and a back polishing tape (sometimes also referred to as " Surface protection tape”) 8. 5, reference numeral W is _{9 'of} a semiconductor wafer 9' width.

Then, laser light (not shown) is irradiated so as to be focused to a focal point set inside the semiconductor wafer 9', thereby forming a modified layer 90' inside the semiconductor wafer 9'as shown in FIG. 5B. The aforementioned laser light is preferably irradiated to the semiconductor wafer 9'from the inner surface 9b' side of the semiconductor wafer 9'.

The position of the focus at this time is the predetermined position of the division (cutting) of the semiconductor wafer 9', which is set in such a way that the semiconductor wafer 9'obtains the target size, shape, and number of semiconductor chips.

Next, a grinder (not shown) is used to grind the inner surface 9b' of the semiconductor wafer 9'. Thereby, the thickness of the semiconductor wafer 9'is adjusted to the target value, and the semiconductor wafer 9 is divided at the formation portion of the modified layer 90' by using the force applied to the semiconductor wafer 9'at the time of grinding ', a plurality of semiconductor wafers 9 are produced as shown in FIG. C.

The modified layer 90' of the semiconductor wafer 9'is different from other parts of the semiconductor wafer 9', and is degraded and weakened by the irradiation of laser light. Therefore, by applying force to the semiconductor wafer 9'on which the modified layer 90' is formed, and applying force to the modified layer 90', the semiconductor wafer 9'is broken at the portion of the modified layer 90', and more A semiconductor wafer 9.

Through the above operations, the semiconductor wafer 9 to be used of the semiconductor device manufacturing sheet 101 is obtained. More specifically, through this step, a semiconductor wafer group 901 in a state where a plurality of semiconductor wafers 9 are aligned and fixed on the back polishing tape 8 is obtained.

When the semiconductor chip group 901 is viewed from above and viewed in plan, the outermost part of the semiconductor chip group 901 is connected to form a planar shape (in this specification, such a planar shape is sometimes referred to as "semiconductor chip group" Plane shape") is exactly the same as the planar shape of the semiconductor wafer 9'when viewed from above, or the difference between these planar shapes is slight to negligible degree, and it can be said that the aforementioned planar shape of the semiconductor wafer group 901 is the same as that of the semiconductor wafer. The aforementioned planar shape of the circle 9'is substantially the same. Therefore, the width of the aforementioned planar shape of the semiconductor wafer group 901 as shown in FIG. 5C is regarded as the same as _{the width W 9 ′ of the semiconductor wafer 9 ′.} Moreover, the maximum value of the width of the aforementioned planar shape of the semiconductor wafer group 901 is regarded as the same as the maximum value _{of the width W 9 ′ of the semiconductor wafer 9 ′.}

Furthermore, here is shown a case where the semiconductor wafer 9 is produced from the semiconductor wafer 9'according to the purpose. However, depending on the conditions during the grinding of the inner surface 9b' of the semiconductor wafer 9', it may be different from the semiconductor wafer 9 Part of the region is not divided into semiconductor wafer 9.

Then, the semiconductor wafer 9 (semiconductor wafer group 901) obtained above is used to manufacture a semiconductor wafer with a film-like adhesive. First, as shown in FIG. 6A, while heating one sheet 101 for manufacturing a semiconductor device with the release film 15 removed, the film-like adhesive 14 in the sheet 101 for manufacturing a semiconductor device is attached to the semiconductor wafer group 901. All the semiconductor wafers 9 in the inner face 9b. At this time, the attachment target of the film-like adhesive 14 may also be an incompletely divided semiconductor wafer.

_{The maximum value of the width W 13} of the intermediate layer 13 and the maximum value of the width W ₁₄ of the film adhesive 14 in the sheet 101 for manufacturing semiconductor devices are the same as the width W _{9'of the semiconductor wafer 9'} (in other words, the semiconductor chip group The maximum value of the width of 901) is exactly the same, or although it is different, the error is slight and basically the same.

At this time, the film-like adhesive 14 (semiconductor device manufacturing sheet 101) is attached to the semiconductor wafer group 901, in addition to the semiconductor wafer group 901 instead of the semiconductor wafer 9', and the semiconductor wafer group in the aforementioned manufacturing method 1 can be used. The film-like adhesive 14 (sheet 101 for manufacturing a semiconductor device) was attached to the circle 9'by the same method.

Then, the back polishing tape 8 is removed from the semiconductor wafer group 901 in the fixed state. Then, as shown in FIG. 6B, while cooling the semiconductor device manufacturing sheet 101, it is pulled in a direction parallel to the surface of the semiconductor device manufacturing sheet 101 (for example, the first surface 12a of the adhesive layer 12). Stretch out, to expand. Here, an arrow E ₁ for manufacturing a semiconductor device 101 of the extension direction of the sheet. By expanding in this way, the film-like adhesive 14 is cut along the outer periphery of the semiconductor wafer 9.

Through this step, a plurality of semiconductor wafers 914 with a film-like adhesive can be obtained. The plurality of semiconductor wafers 914 with a film-like adhesive includes a semiconductor chip 9 and is disposed on the inner surface 9b of the semiconductor chip 9 after cutting. The film adhesive 140. These semiconductor wafers 914 with a film-like adhesive are in a state of being neatly arranged and fixed on the intermediate layer 13 of the laminated sheet 10, forming a group of semiconductor wafers 910 with a film-like adhesive. The semiconductor chip 914 with a film-like adhesive and the semiconductor chip group 910 with a film-like adhesive obtained here are the same as the semiconductor chip 914 with a film-like adhesive and a film obtained by the manufacturing method 1 described above. The semiconductor chip group 910 of the adhesive agent is substantially the same.

As described above, during the division of the semiconductor wafer 9', when a partial region of the semiconductor wafer 9'is not divided into the semiconductor wafer 9, by performing this step, the region is divided into the semiconductor wafer.

The sheet 101 for manufacturing a semiconductor device is preferably expanded at a temperature of -5°C to 5°C. By cooling and expanding the sheet 101 for manufacturing a semiconductor device in this way (cold expansion), the film-like adhesive 14 can be cut more easily and with high precision.

The expansion of the semiconductor device manufacturing wafer 101 can be performed by a known method. For example, fix the area near the periphery of the adhesive layer 12 on the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film-like adhesive 14 are not laminated (the aforementioned non-laminated area) to a ring frame, etc. After the jig (not shown), the entire area of the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film-like adhesive 14 are laminated is raised from the substrate 11 side in the direction from the substrate 11 to the adhesive layer 12 As a result, the semiconductor device manufacturing sheet 101 can be expanded.

In FIG. 6B, the non-laminated region where the intermediate layer 13 and the film-like adhesive 14 are not laminated on the first surface 12a of the adhesive layer 12 is approximately parallel to the first surface 13a of the intermediate layer 13, but as described above In the state where the semiconductor device manufacturing sheet 101 is lifted and expanded as described above, the non-laminated area includes an inclined surface, and the height of the inclined surface is opposite to the lifted direction as it approaches the outer periphery of the adhesive layer 12 The direction is down.

In this step, the sheet 101 for manufacturing a semiconductor device is provided with the intermediate layer 13 (in other words, the film-like adhesive 14 before cutting is provided on the intermediate layer 13), and the film-like adhesive 14 is placed on the target portion (in other words, along the (The outer periphery of the semiconductor wafer 9) is cut with high accuracy, and it is possible to suppress cutting failures.

After the expansion, as shown in FIG. 6C, the semiconductor wafer 914 with the film-like adhesive is pulled away from the intermediate layer 13 in the laminated sheet 10 and picked up. The pick-up at this time can be performed by the same method as the pick-up in the manufacturing method 1 described above, and the pick-up suitability is also the same as the pick-up suitability in the manufacturing method 1.

For example, in this step, even when the ratio of the aforementioned silicon concentration on the first surface 13a of the intermediate layer 13 is 1% to 20%, the semiconductor wafer 914 with the film-like adhesive can be picked up more easily. In addition, the intermediate layer 13 contains, for example, an ethylene-vinyl acetate copolymer as the aforementioned non-silicon resin and a silicone compound as the aforementioned additive. The content of the ethylene-vinyl acetate copolymer in the intermediate layer is relative to that of the intermediate layer. When the ratio of the total mass of the layer is 90% to 99.99% by mass, and the ratio of the content of the aforementioned silicone compound in the intermediate layer to the total mass of the intermediate layer is 0.01% to 10% by mass, It is easier to pick up the semiconductor wafer 914 with the film-like adhesive.

Among the methods of manufacturing a semiconductor wafer with a film-like adhesive described so far, as a preferred embodiment, for example, the following method for manufacturing a semiconductor wafer with a film-like adhesive can be cited. The semiconductor wafer is provided with a semiconductor wafer and a film-like adhesive provided on the inner surface of the aforementioned semiconductor wafer, and the aforementioned semiconductor device manufacturing sheet is provided with the aforementioned base material, an adhesive layer, an intermediate layer, and a film-like adhesive; and The method has the following steps: forming a modified layer inside the semiconductor wafer by irradiating laser light to a focal point set inside the semiconductor wafer; and forming the modified layer after the modified layer is formed The inner surface of the semiconductor wafer is ground, and by using the force applied to the semiconductor wafer during grinding, the semiconductor wafer is divided at the formation portion of the modified layer to obtain a state in which a plurality of semiconductor wafers are neatly arranged The step of semiconductor wafer group; while heating the aforementioned semiconductor device manufacturing sheet, the step of attaching the film-like adhesive in the semiconductor device manufacturing sheet to the inner surfaces of all semiconductor wafers in the aforementioned semiconductor wafer group; The sheet for manufacturing a semiconductor device after being attached to the semiconductor wafer is cooled while being stretched in a direction parallel to the surface of the sheet for manufacturing a semiconductor device, whereby the film-like adhesive is stretched along the The step of cutting the outer periphery of the semiconductor wafer to obtain a group of semiconductor wafers with the film adhesive in a state where the semiconductor wafers with the film adhesive are neatly arranged on the intermediate layer; and the step of separating the semiconductor wafers from the intermediate layer The step of picking up a semiconductor wafer with a film-like adhesive (sometimes referred to as "manufacturing method 2" in this specification).

So far, in any case of manufacturing method 1 and manufacturing method 2, the semiconductor device manufacturing sheet 101 shown in FIG. 1 is taken as an example to describe the usage method, but the semiconductor device of this embodiment is other than this. The device manufacturing sheet can also be used in the same way. In this case, other steps may be appropriately added based on the difference between the configuration of the semiconductor device manufacturing sheet and the semiconductor device manufacturing sheet 101 as necessary, and the semiconductor device manufacturing sheet may be used.

It is not limited to the case of manufacturing method 1 and manufacturing method 2. After obtaining the semiconductor chip group with the film-like adhesive, before picking up the semiconductor chip with the film-like adhesive, the laminated sheet may be attached to the adhesive The surface of the intermediate layer side (first surface) of the agent layer expands in a parallel direction, and the state is maintained. The peripheral portion of the semiconductor wafer group) is heated. By setting in this way, the peripheral portion can be shrunk, and the distance between adjacent semiconductor wafers, that is, the kerf width, is sufficiently wide and uniform on the laminate sheet to be maintained. Moreover, it is easier to pick up semiconductor wafers with a film-like adhesive. [Example]

Hereinafter, the present invention will be described in more detail through specific embodiments. However, the present invention is not limited at all by the examples shown below.

[Materials for manufacturing adhesive composition] The raw materials used to manufacture the adhesive composition are shown below. [Polymer component (a)] (a)-1: Acrylic resin obtained by copolymerizing methyl acrylate (95 parts by mass) and 2-hydroxyethyl acrylate (5 parts by mass) (weight average molecular weight 800,000, glass transition temperature 9°C). [Epoxy resin (b1)] (b1)-1: Cresol novolac type epoxy resin ("CNA147" manufactured by Nippon Kayaku Co., Ltd.) with acrylic acid added, epoxy equivalent 518g/eq, number average molecular weight 2100, and unsaturated group content Epoxy equivalent). [Thermal Hardener (b2)] (b2)-1: Aralkyl type phenol resin (Milex XLC-4L manufactured by Mitsui Chemicals Co., Ltd., number average molecular weight 1100, softening point 63°C) [Filling material (d)] (d)-1: Spherical silicon dioxide ("YA050C-MJE" manufactured by Admatechs, with an average particle size of 50nm, treated with methacrylic acid silane) [Coupling agent (e)] (e)-1: Silane coupling agent, 3-glycidoxypropylmethyl diethoxysilane ("KBE-402" manufactured by Shin-Etsu Polysiloxane) [Crosslinker (f)] (f)-1: Toluene diisocyanate-based crosslinking agent ("Coronate L" manufactured by Tosoh)

[Example 1] [Manufacturing of a sheet for manufacturing semiconductor devices] [Manufacturing of base material] Use an extruder to melt low-density polyethylene (LDPE, "Sumikasen L705" manufactured by Sumitomo Chemical Co., Ltd.), extrude the melt by the T-die method, and stretch the extrudate on two axes using a cooling roll to obtain Base material made of LDPE (thickness 110μm).

[Peeling film] [Light release film] Polyethylene terephthalate film made from one side and peeled off with a silicone release agent (manufactured by Lintec Co., Ltd., product name "SP-PET381031" ). [Heavy release film] PET film made of polyethylene terephthalate film on one side and peeled off with a silicone release agent (manufactured by Lintec Co., Ltd., product name "SP-PET382150" "). [Medium release film] PET film made of polyethylene terephthalate film on one side and peeled off with a silicone release agent (manufactured by Lintec Co., Ltd., product name "SP-PET382051" ").

[Preparation of Adhesive Layer] Manufacture of non-energy-ray-curable adhesive composition containing acrylic resin as adhesive resin (I-1a) (Toyo-Chem) "Oribain BPS 6367X" manufactured by the company (100 parts by mass), and crosslinking agent ("BXX 5640" manufactured by Toyo-Chem) (1 part by mass).

Then, using the light release film, the adhesive composition obtained above was applied to the peeling treatment surface of the light release film, and heated and dried at 100°C for 2 minutes to produce a non-energy ray curable adhesive layer ( Thickness 20μm).

[Production of Intermediate Layer] At room temperature, ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 30,000, content of constituent units derived from vinyl acetate 25% by mass) (15g) was dissolved in 85g of tetrahydrofuran, and the resultant Add siloxane compounds (polydimethylsiloxane, BYK-333" manufactured by BYK Chemie Japan to the solution, with the formula "-Si(-CH ₃ ) _2- The number of structural units indicated by "O-" is 45 to 230) (1.5 g), which is stirred to produce a composition for forming an intermediate layer.

Using the light release film, the composition for forming an intermediate layer obtained above was applied to the release-treated surface of the light release film, and heated and dried at 70°C for 5 minutes to produce an intermediate layer (thickness 20 μm).

[Production of film adhesive] Manufacture a thermosetting adhesive composition containing polymer component (a)-1 (100 parts by mass), epoxy resin (b1)-1 (10 parts by mass), and thermosetting Agent (b2)-1 (1.5 parts by mass), filler (d)-1 (75 parts by mass), coupling agent (e)-1 (0.5 parts by mass), and crosslinking agent (f)-1 (0.5 parts by mass) ).

Then, using the heavy release film (first release film), the adhesive composition obtained above was applied to the release treatment surface of the heavy release film, and heated and dried at 80°C for 2 minutes to produce a thermosetting Film adhesive (thickness 7μm).

[Manufacturing of sheets for semiconductor device manufacturing] The exposed surface of the adhesive layer obtained above, which is opposite to the side with the release film, is bonded to one surface of the substrate obtained above to produce a first intermediate laminate having a release film (in other words, Support sheet with peeling film). The exposed surface of the film-like adhesive obtained above that is opposite to the side with the heavy release film and the exposed surface of the intermediate layer obtained above that is the side opposite to the side with the light release film are bonded together, by This produces a second intermediate laminate with a release film (a laminate of a light release film, an intermediate layer, a film-like adhesive, and a heavy release film).

Then, for the second intermediate laminate with a release film, a cutting knife was used to press the light release film on the intermediate layer side to the film-like adhesive to remove unnecessary parts, thereby making a second intermediate laminate with a heavy release film The laminated body processed product, the second intermediate laminated body processed product with a heavy release film is attached to the release film on the side of the film-shaped adhesive, and the film-shaped adhesive (thickness 7μm) with a circular planar shape (diameter 305mm), The intermediate layer (thickness 20 μm) and the heavy release film are laminated in the thickness direction of these layers in this order.

Then, the light release film is removed from the first intermediate laminate with the light release film obtained above, so that one side of the adhesive layer is exposed. Furthermore, the round light peeling film is removed from the second intermediate laminate processing product with the peeling film obtained above, so that one side of the intermediate layer is exposed. Then, the newly formed exposed surface of the adhesive layer in the first intermediate layered body and the newly formed exposed surface of the intermediate layer in the second intermediate layered body are bonded together. Then, the heavy release film (first release film) is removed from the laminate of the first intermediate laminate and the second intermediate laminate processed product, and replaced with a light release film (second release film) for reattachment. Regarding the substrate and adhesive layer (ie, support sheet) in the resulting laminate, the planar shape of the substrate and adhesive layer (support sheet) becomes a circle (diameter 370mm), which is similar to a circular film. In a way that the shape adhesive and the intermediate layer (305mm in diameter) are concentrically shaped, a cutting knife (370mm in diameter) is used to press from the side of the substrate to remove unnecessary parts. Through the above operations, a sheet for manufacturing a semiconductor device with a release film is obtained. The sheet for manufacturing a semiconductor device with a release film is composed of a substrate (thickness 110μm), an adhesive layer (thickness 10μm), an intermediate layer (thickness 20μm), A film-like adhesive (thickness 7 μm) and a release film are laminated in the thickness direction in this order.

[Reference example 1] Except that the laminate of the first intermediate laminate and the second intermediate laminate processed product was changed from a heavy release film to a light release film, a semiconductor device manufacturing sheet was manufactured by the same method as in Example 1.

[Reference example 2] In the production of the above-mentioned film-like adhesive, when the adhesive composition is applied to the release film, a light release film is used instead of a heavy release film, and it is used in the laminate of the first intermediate laminate and the second intermediate laminate. Except that the light release film was not reattached, the same method as in Example 1 was used to manufacture a sheet for manufacturing a semiconductor device.

[Reference example 3] In the production of the above-mentioned film-like adhesive, when the adhesive composition is applied to the release film, a light release film is used instead of a heavy release film, and it is used in the laminate of the first intermediate laminate and the second intermediate laminate. , The light release film was removed, and replaced with a heavy release film. Except for this, the same method as in Example 1 was used to manufacture a semiconductor device manufacturing sheet.

[Reference example 4] In the production of the above-mentioned film-like adhesive, when the adhesive composition is applied to the release film, the middle release film is used instead of the heavy release film, and it is used in the laminate of the first intermediate laminate and the second intermediate laminate processed product , Except that the reattachment of the mid-release film was not performed, the semiconductor device manufacturing sheet was manufactured by the same method as in the case of Example 1.

[Evaluation] [Peeling force of the peeling film with respect to the adhesive layer] Using the same method as the production of the above-mentioned first intermediate laminate (in which the thickness of the adhesive layer after heating and drying was changed to 10μm), the peeling film was produced The first intermediate laminate (support sheet with release film). After making the first intermediate laminate with a release film, immediately stand for 30 minutes in an environment of 23° C. and 50% RH, and then cut out the first intermediate laminate with a width of 50 mm as a test piece. The release film of the test piece at this time was used as each release film (light release film, heavy release film, or middle release film) of the measurement target of the release force with respect to the adhesive layer. On the side of the fixed support sheet, the so-called 180° peeling in which the peeling film is peeled from the support sheet is performed so that the contact surfaces of the adhesive layer and the peeling film are at an angle of 180°, and the peeling force (mN/50mm) is measured. The measurement conditions are the peeling speed: 1000 mm/min, 23° C., and humidity 50% RH. Furthermore, in the semiconductor device manufacturing sheet of the embodiment, it is not necessary to have a structure in which the adhesive layer is in direct contact with the corresponding release film. The evaluation of the peeling force here is an evaluation used to define the properties of the peeling film.

[Film-forming properties of film adhesive] The film-shaped adhesive was prepared by the same method as the above-mentioned film-shaped adhesive, and the film-forming properties of the film-shaped adhesive were evaluated. At this time, the solid content concentration of the adhesive composition was set to 15% by mass, and the adhesive composition was applied using an applicator so that the thickness of the film-like adhesive after heating and drying became 7 μm. After the adhesive composition is applied and dried, the surface of the part where the adhesive composition in the obtained film adhesive is in contact with the release film is visually observed, and the film forming properties of the film adhesive are evaluated according to the following criteria . A: No shrinkage of the adhesive composition with a diameter of 3 mm or more was confirmed on the release film, and the surface condition was good. B: 1 to 5 shrinkage cavities of the adhesive composition with a diameter of 3 mm or more are confirmed on the release film. C: More than 5 shrinkage cavities of the adhesive composition with a diameter of 3 mm or more are confirmed on the release film.

[Placement process suitability] Regarding the semiconductor device manufacturing sheet obtained in the above examples and reference examples, a tape placement machine (RAD-2700 manufactured by Lintec) was used to continuously carry out 30 film-like bonding of the semiconductor device manufacturing sheet The step of attaching the agent to the inner surface of the 12-inch semiconductor wafer and the ring frame (manufactured by DISCO). This step is performed while peeling the release film of the sheet for manufacturing a semiconductor device from the sheet. Check the condition of the release film after peeling off the release film from the film adhesive.

A: All 30 sheets can peel the entire surface of the film-like adhesive from the release film. B: Among 30 sheets, it was confirmed that the entire surface of the film-like adhesive could not be peeled off from the peeling film, and a part of the film-like adhesive was adhered to the peeling film.

The above evaluation results are shown in Table 1.

[Table 1] Example 1 Reference example 1 Reference example 2 Reference example 3 Reference example 4 Production of film adhesive First release film Heavy peeling film Heavy peeling film Light peeling film Light peeling film Middle release film Peeling force of the first peeling film to the adhesive layer (mN/50mm) 250 250 152 152 180 Film-forming properties of film adhesive A A C C B Sheet for semiconductor device manufacturing Second release film Light peeling film Heavy peeling film Light peeling film Heavy peeling film Middle release film Peeling force of the second peeling film to the adhesive layer (mN/50mm) 152 250 152 250 180 Placement process suitability A B A B A

As shown by the above results, in the production of a film-like adhesive, the heavy peeling film with high peeling force was used, and then the heavy peeling film was changed to the light peeling film with low peeling force in Example 1, the film When the layer of the adhesive is formed, the film-forming adhesive has good film-forming properties, and the suitability of the mounting process is good when used in a sheet for manufacturing semiconductor devices.

Each configuration in each embodiment, a combination of these configurations, etc. are just an example, and addition, omission, substitution, and other changes of the configuration can be made within the scope that does not deviate from the gist of the present invention. In addition, the present invention is not limited by each embodiment, but is limited only by the scope of the claims (applicable patent scope). [Industry Availability]

The present invention can be used to manufacture semiconductor devices.

1: Support sheet 7: Pull-off mechanism 8: Back grinding tape 9: Semiconductor wafer 9': Semiconductor wafer 9a: Circuit formation surface of semiconductor wafer 9a': Circuit formation surface of semiconductor wafer 9b: Inner surface of semiconductor wafer 9b ': the inner surface of the semiconductor wafer 10: the laminated sheet 11: the base material 11a: the first surface of the base material 12: the adhesive layer 12a: the surface of the adhesive layer that is opposite to the side on which the base material is provided (adhesive The first side of the agent layer) 13: Intermediate layer 13a: The side of the intermediate layer that is opposite to the side where the adhesive layer is provided (the first side of the intermediate layer) 14: Film-like adhesive 14a: Film-like adhesive 15: release film (second release film) 15a: first side of release film 16: third release film 17: first release film 90': modified layer 101: semiconductor device manufacturing sheet 102: section Two intermediate laminate 103: second intermediate laminate processed product 104: first intermediate laminate 105: first laminate 107: second laminate 140: film-like adhesive after cutting 901: semiconductor wafer group 910: film Group of semiconductor chips of adhesive agent 914: semiconductor chip with film adhesive agent C, C': cut-in portion E ₁ : direction of expansion P: direction of pull-off W ₁₃ : width of intermediate layer W ₁₄ : film adhesive The width of

Fig. 1 is a cross-sectional view schematically showing a sheet for manufacturing a semiconductor device according to an embodiment of the present invention. [Fig. 2] A plan view of the sheet for manufacturing the semiconductor device shown in Fig. 1. [Fig. 3A is a cross-sectional view schematically showing a method of manufacturing a sheet for manufacturing a semiconductor device according to an embodiment of the present invention. [FIG. 3B] is a cross-sectional view schematically showing a method of manufacturing a sheet for manufacturing a semiconductor device according to an embodiment of the present invention. [FIG. 3C] is a cross-sectional view schematically showing a method of manufacturing a sheet for manufacturing a semiconductor device according to an embodiment of the present invention. [FIG. 3D] is a cross-sectional view schematically showing a method of manufacturing a sheet for manufacturing a semiconductor device according to an embodiment of the present invention. [FIG. 3E] is a cross-sectional view schematically showing a method of manufacturing a sheet for manufacturing a semiconductor device according to an embodiment of the present invention. [FIG. 4A] is a cross-sectional view for schematically explaining an example of a method of using a semiconductor device manufacturing sheet according to an embodiment of the present invention. [FIG. 4B] is a cross-sectional view schematically illustrating an example of the method of using the semiconductor device manufacturing sheet according to an embodiment of the present invention. [FIG. 4C] is a cross-sectional view schematically illustrating an example of a method of using the semiconductor device manufacturing sheet according to an embodiment of the present invention. [FIG. 5A] is a cross-sectional view schematically illustrating an example of a method of manufacturing a semiconductor wafer. [FIG. 5B] is a cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor wafer. [FIG. 5C] is a cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor wafer. [FIG. 6A] A cross-sectional view schematically illustrating another example of the method of using the semiconductor device manufacturing sheet according to one embodiment of the present invention. [FIG. 6B] is a cross-sectional view schematically illustrating another example of the method of using the semiconductor device manufacturing sheet according to an embodiment of the present invention. [FIG. 6C] is a cross-sectional view for schematically explaining another example of the method of using the semiconductor device manufacturing sheet according to an embodiment of the present invention.

1: Support film

10: Multilayer film

11: Substrate

11a: The first side of the substrate

12: Adhesive layer

12a: The surface of the adhesive layer opposite to the side where the substrate is provided (the first surface of the adhesive layer)

13: middle layer

13a: The side of the intermediate layer that is opposite to the side where the adhesive layer is provided (the first side of the intermediate layer)

14: Film adhesive

14a: The first side of the film adhesive

15: peeling film (second peeling film)

15a: Peel off the first side of the film

101: Sheets for semiconductor device manufacturing

W ₁₃ : the width of the middle layer

W ₁₄ : Width of film adhesive

Claims (3)

A method for manufacturing a sheet for manufacturing a semiconductor device. The sheet for manufacturing a semiconductor device includes a substrate, an adhesive layer, an intermediate layer, a film-like adhesive, and a second release film, and is composed of the substrate, the adhesive layer, The intermediate layer, the film-like adhesive, and the second release film are sequentially laminated; 　　The manufacturing method of the semiconductor device manufacturing sheet includes: The first processing step is to apply the intermediate layer and the film adhesive in the second intermediate laminate having the intermediate layer, the film adhesive and the first release film to the intermediate layer of the semiconductor device manufacturing sheet A cut-in portion C is formed at a position corresponding to the outer periphery of the film-like adhesive, and at least a part of the intermediate layer and the film-like adhesive on the outside are removed from the cut-in portion C as a starting point to obtain a second intermediate laminated body processed product; In the lamination step, the first intermediate laminate having the substrate and the adhesive layer is bonded to the second intermediate laminate processed product to obtain the substrate, the adhesive layer, the intermediate layer, and the film The first laminate of the adhesive and the aforementioned first release film; The reposting step is to peel off the first release film of the first laminate, and reattach it to the second release film to obtain a second laminate; and In the second processing step, for the substrate and the adhesive layer of the second laminate, a cut-in portion C'is formed at a position corresponding to the outer periphery of the substrate and the adhesive layer of the semiconductor device manufacturing sheet, and the The cut-in portion C'is a starting point to remove at least a part of the aforementioned base material and the aforementioned adhesive layer located on the outside to obtain a semiconductor device manufacturing sheet; The peeling force between the first release film and the film-shaped adhesive is higher than the peeling force between the second release film and the film-shaped adhesive. The method for manufacturing a sheet for manufacturing a semiconductor device as recited in claim 1, wherein an adhesive composition is applied to the release-treated surface of the first release film and dried to form a single-layer adhesive layer with a thickness of 10 μm The first test piece was obtained. The adhesive composition here is composed of 100 parts by mass of the solid acrylic resin, namely "Oribain BPS 6367X" manufactured by Toyo Chemical Co., and the crosslinking agent, manufactured by Toyo Chemical Co., Ltd. BXX 5640" 1 part by mass; 　　 Regarding the first test piece, the adhesive layer of the first test piece and the first peeling The peeling treatment surfaces of the film are at an angle of 180° to each other, and the first peeling film is peeled from the adhesive layer at 180° to measure the peeling force between the adhesive layer and the first peeling film (mN/50mm) is more than 180mN/50mm; The adhesive composition was applied to the peeling treatment surface of the second release film and dried to form a single-layer adhesive layer with a thickness of 10 μm to obtain a second test piece. The adhesive composition here is composed of Acrylic resin in solid content, namely 100 parts by mass of "Oribain BPS 6367X" manufactured by Toyo Chemical Company, and 1 part by mass of crosslinking agent, "BXX 5640" manufactured by Toyo Chemical Company; Regarding the second test piece, under the conditions of a peeling speed of 1000mm/min, 23°C, and a humidity of 50%RH, the peeling surface of the adhesive layer of the second test piece and the peeling surface of the second peeling film are at 180° to each other. In the method of angle, 180° peeling of the second peeling film from the adhesive layer was performed, and the peeling force (mN/50mm) between the adhesive layer and the second peeling film was measured to be 180mN/50mm. the following. The method for manufacturing a sheet for manufacturing a semiconductor device according to claim 1 or 2, wherein the intermediate layer contains a non-silicon resin having a weight average molecular weight of 100,000 or less as a main component.

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